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Sample records for bipolar transistor integrated

  1. Magnetic bipolar transistor

    OpenAIRE

    Fabian, Jaroslav; Zutic, Igor; Sarma, S. Das

    2003-01-01

    A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

  2. Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

    Science.gov (United States)

    Li, Xingji; Geng, Hongbin; Liu, Chaoming; Zhao, Zhiming; Lan, Mujie; Yang, Dezhuang; He, Shiyu

    2009-12-01

    The radiation responses of the NPN bipolar junction transistors (BJTs) and the TTL bipolar integrated circuits (ICs) have been examined using 20, 40 and 60 MeV Br ions. Key electric parameter was measured and compared after each energy irradiation. Experimental results demonstrate that the degradation in electric parameters caused by the Br ions shows a common feature for the NPN BJTs and TTL ICs, in which the degradation is strengthened with decreasing the Br ions energy. The ionizing dose ( D i) and displacement dose ( D d) as a function of the chip depth in the bipolar devices were calculated using the SRIM code, in order to analyze the radiation effects on the NPN BJTs and the Bipolar ICs. From the experiment and calculation results, it could be deduced that the Br ions mainly cause displacement damage to both the NPN BJTs and the TTL ICs, and the higher the ratio of D d/( D d+D i), the larger the degradation in electric parameters at a given total dose.

  3. Bipolar transistor in VESTIC technology: prototype

    Science.gov (United States)

    Mierzwiński, Piotr; Kuźmicz, Wiesław; Domański, Krzysztof; Tomaszewski, Daniel; Głuszko, Grzegorz

    2016-12-01

    VESTIC technology is an alternative for traditional CMOS technology. This paper presents first measurement data of prototypes of VES-BJT: bipolar transistors in VESTIC technology. The VES-BJT is a bipolar transistor on the SOI substrate with symmetric lateral structure and both emitter and collector made of polysilicon. The results indicate that VES-BJT can be a device with useful characteristics. Therefore, VESTIC technology has the potential to become a new BiCMOS-type technology with some unique properties.

  4. Voltage regulator for battery power source. [using a bipolar transistor

    Science.gov (United States)

    Black, J. M. (Inventor)

    1979-01-01

    A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.

  5. Bipolar Transistor Tester for Physics Lab

    CERN Document Server

    Baddi, Raju

    2012-01-01

    A very simple low cost bipolar transistor tester for physics lab is given. The proposed circuit not only indicates the type of transistor(NPN/PNP) but also indicates the terminals(emitter, base and collector) using simple dual colored(Red/Green) LEDs. Color diagrams of testing procedure have been given for easy following. This article describes the construction of this apparatus in all detail with schematic circuit diagram, circuit layout and constructional illustration.

  6. Silicon/silicon germanium heterostructures: Materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors

    Science.gov (United States)

    Chung, Sung-Yong

    With the advent of the first transistor in 1947, the integrated circuit (IC) industry has rapidly expanded with the tremendous advances in the development of IC technology. The driving force in the evolution of IC technology is the reduction of transistor sizes. Without a doubt, transistor miniaturization will face fundamental physical limitations imposed by further dimensional scaling of silicon transistors in the near future. According to the 2004 International Technology Roadmap for Semiconductors (ITRS), the width of a gate electrode for complementary metal-oxide-semiconductor (CMOS) is projected to be a mere 7 nm by the end of 2018. No further solutions have been found. Since the 2001 ITRS, tunneling devices have been evaluated as an emerging technology to augment silicon CMOS. Transistor circuitry incorporating tunneling devices realized using III-V semiconductors has exhibited superior performance over its transistor-only counterparts. However, due to fundamental differences in material properties, such technology is not readily compatible with the mainstream platforms (>95% market share of semiconductors) of CMOS and HBT technologies. Recently, we demonstrated the successful monolithic integration of Si-based resonant interband tunnel diodes (RITDs) with CMOS and SiGe HBT, which makes them more attractive than III-V based tunnel diodes for system level integration. This dissertation is concerned with the development of quantum functional tunneling devices, RITDs, and high-speed transistors, HBTs, using Si/SiGe heterostructures as well as material growth and electrical properties of Si/SiGe heterostructures. Emphasis is placed on the development of Si/SiGe-based RITDs, HBTs, and their monolithic integration for 3-terminal negative differential resistance (NDR) devices. The operating principles of Si-based RITDs and the integration of RITD with HBT are also discussed.

  7. Design of Integrated Fiber-Optic Receivers Using Heterojunction Bipolar Transistors.

    Science.gov (United States)

    Buchwald, Aaron Wayne

    Recent demands for increased information transfer through communication networks are stretching channel capacities to the limit. Telecommunication trunking, local-area data networks, video on demand, integrated multi-media applications, etc. require ever increasing bandwidths. Optical fibers are the best known medium for point-to-point communication because of their high bandwidth (1400 GHz-km) and low losses (0.15 dB/km). Electronic circuits are not fast enough to fully exploit the broadhand fiber-optic channel, and cause a bottleneck in the throughput of optical communication systems. This dissertation focuses on the theory and practice of the design of integrated circuits for multi-gigabit -per-second fiber-optic receivers. Realizing a 10 Gb/s system consistent with the SONET hierarchy is the ultimate goal of the research, and test circuits were developed to this end. Difficulty in implementing clock recovery circuits at rates greater than 3 Gb/s have limited the capacity of integrated receivers. Therefore, considerable attention is paid to clock extraction techniques. Architectures applicable to high-speed systems and insensitive to parasitic effects are presented. Among the test circuits developed was a 12 GHz InP-based HBT preamplifier. The circuit contains a PIN photodetector and can achieve an rms input noise of approximately 1.25muA at a data rate of 10 Gb/s. Two VCOs were designed in an AIGaAs/GaAs HBT process. A ring oscillator and emitter-coupled multivibrator, both operating at 2.75 GHz were fabricated. A patented 7 GHz ring VCO with frequency doubling was also designed. The new VCO was used to implement a 6 GHz phase-lock loop. The test circuits demonstrate functionality of key building blocks of a high-speed clock recovery circuit. Simulations based on models extracted from the test circuit predict that the architectures presented are applicable for clock recovery at a data rate of 10 Gb/s. Further research is needed to implement a complete

  8. Polyphosphonium-based ion bipolar junction transistors.

    Science.gov (United States)

    Gabrielsson, Erik O; Tybrandt, Klas; Berggren, Magnus

    2014-11-01

    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices.

  9. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  10. Bipolar Charge Plasma Transistor: A Novel Three Terminal Device

    OpenAIRE

    Kumar, M. Jagadesh; Nadda, Kanika

    2012-01-01

    A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter, base and collector regions of a lateral NPN transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor with identical dimensions. Our simulation...

  11. Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax > 650GHz for 340GHz Transmitter

    Science.gov (United States)

    2008-12-01

    shows a schematic of the VBIC model. It is easy to tell that this model was developed for an implanted device from the parasitic pnp - transistor ...ARL-BAA - W911NF-07-1-0498 Under topic: 2.16 RF Devices and Integrated Circuit Technology Sb-Based Double Heterojunction Bipolar Transistors (DHBTs...CONTRACT ’GRANT NUMBER: ARI.-BAA - VV91 l\\F-07-R-U()(H REPORT TITLE: Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) with Kmax:-6.S0GHz

  12. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  13. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  14. Bounding the total-dose response of modern bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kosier, S.L.; Wei, A.; Schrimpf, R.D. [Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering; Combs, W.E. [Naval Surface Warfare Center-Crane, Crane, IN (United States); Fleetwood, D.M. [Sandia National Labs., Albuquerque, NM (United States); DeLaus, M. [Analog Devices, Inc., Wilmington, MA (United States); Pease, R.L. [RLP Research, Albuquerque, NM (United States)

    1994-03-01

    The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

  15. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

    1998-12-01

    Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

  16. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

    1998-10-01

    Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

  17. Advanced insulated gate bipolar transistor gate drive

    Science.gov (United States)

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  18. Observation of negative differential transconductance in tunneling emitter bipolar transistors

    Science.gov (United States)

    van Veenhuizen, Marc J.; Locatelli, Nicolas; Moodera, Jagadeesh; Chang, Joonyeon

    2009-08-01

    We report on measurement of negative differential transconductance (NDTC) of iron (Fe)/magnesium-oxide (MgO)/silicon tunneling emitter NPN bipolar transistors. Device simulations reveal that the NDTC is a consequence of an inversion layer at the tunneling-oxide/P-silicon interface for low base voltages. Electrons travel laterally through the inversion layer into the base and give rise to an increase in collector current. The NDTC results from the recombination of those electrons at the interface between emitter and base contact which is dependent on the base voltage. For larger base voltages, the inversion layer disappears marking the onset of normal bipolar transistor behavior.

  19. Toward Complementary Ionic Circuits: The npn Ion Bipolar Junction Transistor

    OpenAIRE

    Tybrandt, Klas; Gabrielsson, Erik; Berggren, Magnus

    2011-01-01

    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable t...

  20. Selfaligned InGaAs/InP heterostructure bipolar transistors

    Science.gov (United States)

    Feygenson, A.; Temkin, H.; Tsang, W. T.; Yang, L.; Yadvish, R. D.

    1991-06-01

    InGaAs/InP heterostructure bipolar transistors have been realized using a new self-aligned process. Transistor wafers were grown by chemical beam epitaxy. Ideality factors close to unity were measured for emitter-base and collector-base diodes. The resulting devices exhibit nearly constant gain over four orders of magnitude of collector current densities, from j = 0.00015 to 1.5 A/sq cm.

  1. Toward complementary ionic circuits: the npn ion bipolar junction transistor.

    Science.gov (United States)

    Tybrandt, Klas; Gabrielsson, Erik O; Berggren, Magnus

    2011-07-06

    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable transistor characteristics over extensive time of operation and ion current switch times below 10 s. Our results promise complementary chemical circuits similar to the electronic equivalence, which has proven invaluable in conventional electronic applications.

  2. Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device

    Institute of Scientific and Technical Information of China (English)

    Zhang You-Run; Zhang Bo; Li Ze-Hong; Lai Chang-Jin; Li Zhao-Ji

    2009-01-01

    This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor (BJT-BSIT) compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25℃C-85℃ and 20% in -55℃-25℃.

  3. Early effect of SiGe heterojunction bipolar transistors

    Science.gov (United States)

    Xu, Xiao-Bo; Zhang, He-Ming; Hu, Hui-Yong; Qu, Jiang-Tao

    2012-06-01

    The standard Early voltage of the SGP model is generalized for SiGe NPN heterojunction bipolar transistors (HBTs). A new compact formulation of the Early voltage compatible with the SGP model is presented. The impact of the Ge profile on Early effect is shown and validated by experiments. The model can be applied to the SGP model for circuit simulation.

  4. Bipolar Transistors Can Detect Charge in Electrostatic Experiments

    Science.gov (United States)

    Dvorak, L.

    2012-01-01

    A simple charge indicator with bipolar transistors is described that can be used in various electrostatic experiments. Its behaviour enables us to elucidate links between 'static electricity' and electric currents. In addition it allows us to relate the sign of static charges to the sign of the terminals of an ordinary battery. (Contains 7 figures…

  5. Experiments with Charge Indicator Based on Bipolar Transistors

    Science.gov (United States)

    Dvorak, Leos; Planinsic, Gorazd

    2012-01-01

    A simple charge indicator with bipolar transistors described recently enables us to perform a number of experiments suitable for high-school physics. Several such experiments are presented and discussed in this paper as well as some features of the indicator important for its use in schools, namely its sensitivity and robustness, i.e. the…

  6. Bipolar Transistors Can Detect Charge in Electrostatic Experiments

    Science.gov (United States)

    Dvorak, L.

    2012-01-01

    A simple charge indicator with bipolar transistors is described that can be used in various electrostatic experiments. Its behaviour enables us to elucidate links between 'static electricity' and electric currents. In addition it allows us to relate the sign of static charges to the sign of the terminals of an ordinary battery. (Contains 7 figures…

  7. Carrier tunneling in models of irradiated heterojunction bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel Maxwell [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-08-01

    As part of Sandia's program to simulate the effect of displacement damage on operation of heterojunction bipolar transistors (HBTs), we are examining the formulation in 1-D of band-to-band (bb) and band-to-trap (b-t) carrier tunneling.

  8. Modeling and Simulation of Photoelectronic Lambda Bipolar Transistor

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Based on the region model of lambda bipolar transistor (LBT), a dividing region theory model of PLBT is set up,simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor (PLBT) are characterized by a simple circuit model.Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly, by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simulation results are made, which show that the analytical results are in agreement with the observed devices characteristics.

  9. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

    Science.gov (United States)

    2015-02-01

    Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module by Gregory K Ovrebo ARL-TR-7210...ARL-TR-7210 February 2015 Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module Gregory K... Bipolar Transistor (IGBT) Power Module 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Gregory K Ovrebo 5d

  10. Doping To Reduce Base Resistances Of Bipolar Transistors

    Science.gov (United States)

    Lin, True-Lon

    1991-01-01

    Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.

  11. Development of Microwave SiGe Heterojunction Bipolar Transistors

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home-made high vacuum/rapid thermal processing chemical vapor deposition equipment. The HBTs show good performance and industrial use value. The current gain is beyond 100;the breakdown voltage BVceo is 3.3V,and the cut-off frequency is 12.5GHz which is measured in packaged form.

  12. Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

    Science.gov (United States)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2012-01-01

    Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

  13. Neuro-Space Mapping for Modeling Heterojunction Bipolar Transistor

    Institute of Scientific and Technical Information of China (English)

    Yan Shuxia; Cheng Qianfu; Wu Haifeng; Zhang Qijun

    2015-01-01

    A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formu-lations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models.

  14. The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

    2016-09-21

    The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

  15. Integrated neurobiology of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Vladimir eMaletic

    2014-08-01

    Full Text Available From a neurobiological perspective there is no such thing as bipolar disorder. Rather, it is almost certainly the case that many somewhat similar, but subtly different, pathological conditions produce a disease state that we currently diagnose as bipolarity. This heterogeneity—reflected in the lack of synergy between our current diagnostic schema and our rapidly advancing scientific understanding of the condition—limits attempts to articulate an integrated perspective on bipolar disorder. However, despite these challenges, scientific findings in recent years are beginning to offer a provisional unified field theory of the disease. This theory sees bipolar disorder as a suite of related neurodevelopmental conditions with interconnected functional abnormalities that often appear early in life and worsen over time. In addition to accelerated loss of volume in brain areas known to be essential for mood regulation and cognitive function, consistent findings have emerged at a cellular level, providing evidence that bipolar disorder is reliably associated with dysregulation of glial-neuronal interactions. Among these glial elements are microglia—the brain’s primary immune elements, which appear to be overactive in the context of bipolarity. Multiple studies now indicate that inflammation is also increased in the periphery of the body in both the depressive and manic phases of the illness, with at least some return to normality in the euthymic state. These findings are consistent with changes in the HPA axis, which are known to drive inflammatory activation. In summary, the very fact that no single gene, pathway or brain abnormality is likely to ever account for the condition is itself an extremely important first step in better articulating an integrated perspective on both its ontological status and pathogenesis. Whether this perspective will translate into the discovery of innumerable more homogeneous forms of bipolarity is one of the great

  16. InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor

    Science.gov (United States)

    2005-03-01

    Papanicolaou An npn double heterojunction bipolar transistor has been made using In0.27Ga0.73Sb for the base and two different InxAl1-xAsySb1-y alloys...zSb base constitute a new group of semiconductors for making an npn double heterojunction bipolar transistor (DHBT). The group of alloys reported here...MAR 2005 2. REPORT TYPE 3. DATES COVERED 00-00-2005 to 00-00-2005 4. TITLE AND SUBTITLE InAlAsSb/InGaSb double heterojunction bipolar transistor

  17. Design and Fabrication of Novel Dual-Base Negative-Differential Resistance Heterojunction Bipolar Transistor

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunction bipolar transistor (HBT) is designed and fabricated. Molecule beam extension, selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT,the groove is the key factor producing NDR.

  18. Comprehensive failure analysis of leakage faults in bipolar transistors

    Science.gov (United States)

    Domengès, B.; Murray, H.; Schwindenhammer, P.; Imbert, G.

    2004-02-01

    The origin of a leakage current in several failed NPN bipolar transistors has been identified by complementary advanced failure analysis techniques. After precise localization of the failing area by photon emission microscopy and optical beam induced resistance change investigations, a focus ion beam technique was used to prepare thin lamellae adequate for transmission electron microscopy (TEM) study. Characterization of the related microstructure was performed by TEM and energy-dispersive spectrometry nanobeam analyses. It was identified as Ti-W containing trickle-like residue located at the surface of the spacers. Current-voltage measurements could be related to such structure defects and the involved conduction mechanism was identified as the Poole-Frenkel effect.

  19. Heterojunction Bipolar Transistor Power Amplifiers for Long-Range X-band Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR Phase I project, Vega Wave Systems, Inc. will develop and demonstrate a novel InGaP-GaAs heterojunction bipolar transistor power amplifier for...

  20. Silicon Nanomembrane Bipolar Junction Transistors for Microwave Frequency Applications

    Science.gov (United States)

    Bavier, John; Ballarotto, Vince; Cumings, John

    2014-03-01

    Silicon nanomembranes (SiNMs) are a promising material for flexible semiconductor devices due to their high carrier mobility and compatibility with standard CMOS processing. Previous studies have reported SiNM field-effect transistors with operating frequencies as high as 12 GHz. In order to expand the utility of SiNM devices, a method for the fabrication of monocrystalline microwave frequency silicon bipolar junction transistors (BJTs) will be presented. High-temperature processing of SiNM BJT devices is performed on a Silicon-on-Insulator (SOI) wafer. Using angled ion implantation, conformal chemical vapor deposition and anisotropic reactive ion etching, a poly-silicon sidewall spacer is formed. This spacer defines a base region approximately 200nm wide without the use of electron beam lithography. Devices are then released using selective wet etching in HF and transferred to alternate flexible substrates. Microwave frequency data will be presented, and the effects of the transfer process on device performance will be discussed.

  1. Neutron effects on the electrical and switching characteristics of NPN bipolar power transistors

    Science.gov (United States)

    Frasca, Albert J.; Schwarze, Gene E.

    1988-01-01

    The use of nuclear reactors to generate electrical power for future space missions will require the electrical components used in the power conditioning, control, and transmission subsystem to operate in the associated radiation environments. An initial assessment of neutron irradiation on the electrical and switching characteristics of commercial high power NPN bipolar transistors was investigated. The results clearly show the detrimental effects caused by neutron irradiation on the electrical and switching characteristics of the NPN bipolar power transistor.

  2. Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Witczak, S.C.; Lacoe, R.C. [Aerospace Corp., Los Angeles, CA (United States). Electronics Technology Center; Galloway, K.F. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical and Computer Engineering] [and others

    1997-03-01

    The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors.

  3. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms

    Science.gov (United States)

    2011-09-01

    The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms by Gregory A. Mitchell...Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...MD 20783-1197 ARL-TN-0459 September 2011 The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile

  4. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chaoming; Yang, Jianqun [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Xingji, E-mail: lxj0218@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Guoliang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xiao, Liyi [Department of Astronautics, Harbin Institute of Technology, Harbin 150001 (China); Bollmann, Joachim [Institute of Electronics and Sensor Materials, TU Bergakademie Freiberg, 71691 (Germany)

    2015-12-15

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  5. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    Science.gov (United States)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-12-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  6. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

    Science.gov (United States)

    Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

    2017-01-01

    Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor. PMID:28134275

  7. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

    Science.gov (United States)

    Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

    2017-01-01

    Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor.

  8. Neutron Radiation Effect On 2N2222 And NTE 123 NPN Silicon Bipolar Junction Transistors

    Science.gov (United States)

    Oo, Myo Min; Rashid, N. K. A. Md; Karim, J. Abdul; Zin, M. R. Mohamed; Hasbullah, N. F.

    2013-12-01

    This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region.

  9. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias

    2014-01-01

    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  10. Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

    Directory of Open Access Journals (Sweden)

    OO Myo Min

    2014-01-01

    Full Text Available Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.

  11. Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements

    DEFF Research Database (Denmark)

    Vidkjær, Jens; Porra, V.; Zhu, J.;

    1992-01-01

    A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis...... results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor....

  12. Total dose radiation effects on hardened SOI bipolar transistors using the NPS LINAC

    Science.gov (United States)

    Brittain, Donald R., Jr.

    1995-03-01

    Silicon-on-insulator bipolar transistors fabricated using the Harris UHF-1 process, were irradiated at room temperature with 30 and 60 MeV electron beams. Some of the transistors on each die were configured and biased as a simple operational amplifier (opamp), one was placed in a common emitter type circuit and the remaining were biased to measure transistor parameter degradation. The purpose of this setup was to observe the total dose effects of the transistor and of an opamp on the same die in order to derive a more accurate model of an opamp under total dose conditions. This investigation was successful in conducting in-situ measurements of opamp gain and 3dB frequency while also measuring the current gain of similar transistors on the same die.

  13. Using Animation to Improve the Students' Academic Achievement on Bipolar Junction Transistor

    Science.gov (United States)

    Zoabi, W.; Sabag, N.; Gero, A.

    2012-01-01

    Teaching abstract subjects to students studying towards a degree in electronics practical engineering (a degree between a technician and an engineer) requires didactic tools that enable understanding of issues without using advanced mathematics and physics. One basic issue is the BJT (Bipolar Junction Transistor) that requires preliminary…

  14. 300 Degree C GaN/AlGaN Heterojunction Bipolar Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Abernathy, C.R.; Baca, A.G.; Cho, H.; Chow, P.P.; Han, J.; Hichman, R.A.; Jung, K.B.; Kopf, R.F.; La Roche, J.R.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Wilson, R.G.

    1998-10-14

    A GaN/AIGaN heterojunction bipolar transistor has been fabricated using C12/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250oC), the device shows improved gain. Future efforts which are briefly summarized. should focus on methods for reducing base resistance.

  15. Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors

    Science.gov (United States)

    Ritter, D.; Hamm, R. A.; Feygenson, A.; Temkin, H.; Panish, M. B.; Chandrasekhar, S.

    1992-07-01

    The transport mechanism of electrons across an energy barrier in the collector of a heterojunction bipolar transistor is studied and identified as hot electron thermionic emission. Bistability between tunneling and thermionic emission was observed at 77 K and room temperature. The bistability can be suppressed by n-type doping of the heterointerface vicinity.

  16. Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons

    Science.gov (United States)

    Liu, Chaoming; Li, Xingji; Yang, Jianqun; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-12-01

    Bipolar junction transistors are sensitive to both ionization and displacement damage due to charged particles from space radiation. Passivating oxides and the SiO2/Si interface are more sensitive to ionization damage whereas displacement damage may strongly influence the bulk properties of a device. Fast electrons with energies below a few MeV introduces exclusively target ionization while heavy ions at moderate energies (lower than 2 MeV/amu) results in displacement damage due to individual Frenkel-pairs generation. Although both kinds of radiation are basically independent an effective correlation was seen in the electronic characteristics of transistors. We report on the effects on current gain and current-voltage characteristics of bipolar junction transistors due to successive irradiation with 20 MeV Br ions and 110 keV electrons.

  17. Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers

    Science.gov (United States)

    2007-05-14

    gain 4H-SiC NPN power bipolar junction transistor ,” IEEE Electron Device Letters, vol. 24, pp. 327-329, May 2003. [3] C.-F. Huang and J. A. Cooper...Jr., “High current gain 4H-SiC NPN Bipolar Junction Transistors ,” IEEE Electron Device Letters, vol. 24, pp. 396-398, Jun. 2003. [4] Sumi...Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers Jianhui Zhang, member, IEEE, Xueqing, Li, Petre Alexandrov

  18. Emitter space charge layer transit time in bipolar junction transistors

    Science.gov (United States)

    Rustagi, S. C.; Chattopadhyaya, S. K.

    1981-04-01

    The charge defined emitter space charge layer transit times of double diffused transistors have been calculated using a regional approach, and compared with the corresponding base transit times. The results obtained for emitter space-charge layer transit times have been discussed with reference to the capacitance analysis of Morgan and Smit (1960) for graded p-n junctions.

  19. Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor

    OpenAIRE

    N. Toufik; F. PéLanchon; P. Mialhe

    2001-01-01

    The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameters are degraded during the electrical stress experiments. Both the amplitude and the rate of this degradation depend on the stress duration. The evaluation of these parameters allows to discuss hot carrier degradation process, to estimate the stress magnitude and to control the device.

  20. Restabilizing Mechanisms after the Onset of Thermal Instability in Bipolar Transistors

    Institute of Scientific and Technical Information of China (English)

    CHEN Liang; ZHANG Wan-Rong; XIE Hong-Yun; JIN Dong-Yue; DING Chun-Bao; FU Qiang; WANG Ren-Qing; XIAO Ying; ZHAO Xin

    2011-01-01

    The restabilizing mechanisms after the onset of thermal instability in bipolar transistors are studied by theoretical analyses,computer simulations and experimental measurements.Restability conditions are described by novel analytical formulae.Furthermore,the expression of collect current in the second fly-back point is given for the first time.The effects of emitter ballast resistance,collector-emitter voltage and thermal resistance on restabilization mechanisms are expressed and investigated.

  1. A novel technique for CAD-optimization of analog circuits with bipolar transistors

    Directory of Open Access Journals (Sweden)

    B. Dimov

    2009-05-01

    Full Text Available In this paper, a novel approach for robust automatic optimization of analog circuits with bipolar transistors is presented. It includes additional formal parameters into the device model cards, which sweep the model parameters smoothly between the different device types. In this way, not only the sizing, but also the choice of the device type is committed to the optimization tool, thus improving the efficiency of the design process significantly.

  2. Simulation of synergistic effects on lateral PNP bipolar transistors induced by neutron and gamma irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi' an 710024 (China); Bai, Xiaoyan; Chen, Wei; Yang, Shanchao; Liu, Yan; Jin, Xiaoming [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi' an 710024 (China); Ding, Lili [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi' an 710024 (China); Department of Information Engineering, Padova University, Via Gradenigo 6/B, 35131 Padova (Italy)

    2015-10-01

    With semiconductor device simulation software TCAD, numerical simulations of ionizing/displacement synergistic effects on 6 kinds of lateral PNP bipolar transistors induced by the mixed irradiation of neutron and gamma are carried out by means of changing the minority carrier lifetimes, adding charged traps to the oxide layer and increasing the surface recombination velocity in Si/SiO{sub 2} interface. The results indicate that ionizing/displacement synergistic effects on the lateral PNP bipolar transistors are not a simple sum of total ionizing dose effects and displacement effects, and total ionizing dose effects can enhance neutron displacement damages, leading to greater gain degradation. The physical mechanisms of ionizing/displacement synergistic effects are analyzed based on the results. The positive charge in the oxide layer and Si/SiO{sub 2} interface traps induced by gamma irradiation can enhance the recombination processes of carriers in the bulk defects induced by neutron irradiation, and this is the main cause of ionizing/displacement synergistic effects on the lateral PNP bipolar transistors. - Highlights: • Numerical simulation methods of ionizing/displacement synergistic effects induced by the mixed irradiation of neutron and gamma are established with semiconductor device simulation software TCAD. • Ionizing/displacement synergistic effects between the lateral PNP bipolar transistors with different neutral base widths and base doping concentrations are compared. • The difference between ionizing/displacement synergistic effects and the simple sum of total ionizing dose effects and displacement effects is analyzed. • The physical mechanisms of ionizing/displacement synergistic effects are explained.

  3. Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect

    Science.gov (United States)

    d'Alessandro, Vincenzo

    2017-01-01

    This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base DC measurements. The accuracy is numerically verified by making use of a compact model calibrated on I-V characteristics of state-of-the-art SOG BJTs and SiGe:C HBTs.

  4. Technology and First Electrical Characteristics of Complementary NPN and PNP InAlAs/InGaAs Heterojunction Bipolar Transistors

    Science.gov (United States)

    Cui, Delong; Pavlidis, Dimitris; Sawdai, Donald; Chin, Patrick; Block, Tom

    2002-02-01

    A selective molecular beam epitaxy (MBE) regrowth approach is presented and applied in the demonstration of complementary InP heterojunction bipolar transistor (HBT) technology for monolithic integration of NPN and PNP HBTs. State-of-art performance has been observed: The DC gain was 35 for both integrated NPN and PNP HBTs. fT of 79.6 GHz and fmax of 109 GHz were achieved for NPN devices while fT of 11.6 GHz and fmax of 22.6 GHz were achieved for PNP devices. Little performance degradation has been observed compared with same design NPN or PNP HBT layers grown on individual substrates. Monolithic microwave integrated circuits (MMICs) based on complementary InP HBT technology have been studied for the first time using this technology and their electrical characteristics are presented.

  5. Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

    Science.gov (United States)

    Shaheed, M. Reaz

    1995-01-01

    to provide consistently accurate values for base sheet resistance for both Si- and SiGe-base transistors over a wide range of temperatures. A model for plasma-induced bandgap narrowing suitable for implementation in a numerical simulator has been developed. The appropriate method of incorporating this model in a drift -diffusion solver is described. The importance of including this model for low temperature simulation is demonstrated. With these models in place, the enhanced simulator has been used for evaluating and designing the Si- and SiGe-base bipolar transistors. Silicon-germanium heterojunction bipolar transistors offer significant performance and cost advantages over conventional technologies in the production of integrated circuits for communications, computer and transportation applications. Their high frequency performance at low cost, will find widespread use in the currently exploding wireless communication market. However, the high performance SiGe-base transistors are prone to have a low common-emitter breakdown voltage. In this dissertation, a modification in the collector design is proposed for improving the breakdown voltage without sacrificing the high frequency performance. A comprehensive simulation study of p-n-p SiGe-base transistors has been performed. Different figures of merit such as drive current, current gain, cut -off frequency and Early voltage were compared between a graded germanium profile and an abrupt germanium profile. The differences in the performance level between the two profiles diminishes as the base width is scaled down.

  6. Vertically Integrated Multiple Nanowire Field Effect Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu

    2015-12-09

    A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.

  7. Radiation-hardened transistor and integrated circuit

    Science.gov (United States)

    Ma, Kwok K.

    2007-11-20

    A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

  8. Residual phase noise modeling of amplifiers using silicon bipolar transistors.

    Science.gov (United States)

    Theodoropoulos, Konstantinos; Everard, Jeremy

    2010-03-01

    In this paper, we describe the modeling of residual 1/f phase noise for Si bipolar amplifiers operating in the linear region. We propose that for Si bipolar amplifiers, the 1/f phase noise is largely caused by the base emitter recombination flicker noise. The up-conversion mechanism is described through linear approximation of the phase variation of the amplifier phase response by the variation of the device parameters (C(b)c, C(be), g(m), r(e)) caused by the recombination 1/f noise. The amplifier phase response describes the device over the whole frequency range of operation for which the influence of the poles and zeros is investigated. It is found that for a common emitter amplifier it is sufficient to only incorporate the effect of the device poles to describe the phase noise behavior over most of its operational frequency range. Simulations predict the measurements of others, including the flattening of the PM noise at frequencies beyond f(3dB), not predicted by previous models.

  9. Monolithic Lumped Element Integrated Circuit (M2LEIC) Transistors.

    Science.gov (United States)

    INTEGRATED CIRCUITS, *MONOLITHIC STRUCTURES(ELECTRONICS), *TRANSISTORS, CHIPS(ELECTRONICS), FABRICATION, EPITAXIAL GROWTH, ULTRAHIGH FREQUENCY, POLYSILICONS, PHOTOLITHOGRAPHY, RADIOFREQUENCY POWER, IMPEDANCE MATCHING .

  10. Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

    Energy Technology Data Exchange (ETDEWEB)

    Fu, S.-I. [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan (China); Lai, P.-H. [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan (China); Tsai, Y.-Y. [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan (China); Hung, C.-W. [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan (China); Yen, C.-H. [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan (China); Cheng, S.-Y. [Department of Electronic Engineering, Nation Ilan University, No.1, Sec. 1, Shen-Lung Road, I-Lan, 26041 Taiwan (China); Liu, W.-C. [Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan (China)]. E-mail: wcliu@mail.ncku.edu.tw

    2006-09-15

    An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain {beta} {sub max}, offset voltage {delta}V {sub CE}, and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications.

  11. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. J. [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carroll, M. S. [Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); Carr, S. M. [Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)

    2015-05-18

    We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

  12. 1/f noise in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar transistors

    Science.gov (United States)

    Hoque, Md Mazhar Ul; Celik-Butler, Zeynep; Trogolo, Joe; Weiser, Douglas; Green, Keith

    2005-04-01

    The origin of 1/f fluctuations in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar-junction transistors is described. The interfacial oxide (IFO) at the monosilicon-polycrystalline silicon interface is found to significantly affect the noise behavior. The low-frequency noise originates from two independent fluctuation mechanisms: in the diffusion and tunneling components of the base current noise power spectral density (SI_B) and from the diffusion current and carrier number fluctuations in the collector current noise power spectral density (SI_C). The Hooge noise parameters for electrons and holes are calculated from the diffusion fluctuation models for SI_B and SI_C, respectively. Noise measurements on devices with different sizes and different IFO thicknesses indicate that the fluctuations occur in the minority-carrier (electron) tunneling current component of SI_B through the IFO. The thickness of the IFO is estimated using this noise model. The tunneling fluctuations dominate over the diffusion fluctuations for the smaller (0.7×0.7μm2) transistors, while the opposite is the case for the larger (0.7×100μm2) ones. The scaling effect on the noise performance of these transistors is discussed. The effect of the IFO on the dc characteristics and the noise behavior of the PNP transistors is compared to that of the negative-positive-negative (NPN) counterparts on the same wafer.

  13. Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors

    Science.gov (United States)

    Shamir, N.; Ritter, D.; Cytermann, C.

    2002-06-01

    A tunnel diode collector contact to InP based PNP heterojunction bipolar transistors (HBTs) is suggested and demonstrated. The additional heavily doped n-type contact layer replaces the thick p-type contact layer required in conventional structures. The thermal and electrical properties of the collector contact layer thus become similar to those of NPN HBTs. A secondary ion mass spectroscopy study explores the maximum tin doping level that can be obtained in the base. Finally, the temperature dependence of the current gain is presented and interpreted.

  14. Total dose and dose rate models for bipolar transistors in circuit simulation.

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Phillip Montgomery; Wix, Steven D.

    2013-05-01

    The objective of this work is to develop a model for total dose effects in bipolar junction transistors for use in circuit simulation. The components of the model are an electrical model of device performance that includes the effects of trapped charge on device behavior, and a model that calculates the trapped charge densities in a specific device structure as a function of radiation dose and dose rate. Simulations based on this model are found to agree well with measurements on a number of devices for which data are available.

  15. Bias dependence of synergistic radiation effects induced by electrons and protons on silicon bipolar junction transistors

    Science.gov (United States)

    Liu, Chaoming; Li, Xingji; Yang, Jianqun; Ma, Guoliang; Xiao, Liyi

    2015-06-01

    Bias dependence on synergistic radiation effects caused by 110 keV electrons and 170 keV protons on the current gain of 3DG130 NPN bipolar junction transistors (BJTs) is studied in this paper. Experimental results indicate that the influence induced by 170 keV protons is always enhancement effect during the sequential irradiation. However, the influence induced by 110 keV electrons on the BJT under various bias cases is different during the sequential irradiation. The transition fluence of 110 keV electrons is dependent on the bias case on the emitter-base junction of BJT.

  16. Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    Guoyou Liu

    2015-09-01

    Full Text Available Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+ insulated-gate bipolar transistor (IGBT technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.

  17. Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy

    Science.gov (United States)

    Hamm, R. A.; Feygenson, A.; Ritter, D.; Wang, Y. L.; Temkin, H.; Yadvish, R. D.; Panish, M. B.

    1992-08-01

    Heterostructure bipolar transistors (HBT) have been grown by selective area epitaxy (SAE) using metalorganic molecular beam epitaxy (MOMBE). dc characteristics, comparable to those for devices grown on unprocessed substrates, were obtained after removal of the edge growth. Data is also presented for devices in which the emitter mesas were regrown by SAE into openings which had been previously defined by photolithography on a structure containing only the collector and base layers. In both cases we use an in situ cleaning process consisting of an Ar ion beam sputtering and Cl2 etching. This step results in significantly improved junction quality.

  18. ESTIMATION OF THERMAL PARAMETERS OF POWER BIPOLAR TRANSISTORS BY THE METHOD OF THERMAL RELAXATION DIFFERENTIAL SPECTROMETRY

    Directory of Open Access Journals (Sweden)

    V. S. Niss

    2015-01-01

    Full Text Available Thermal performance of electronic devices determines the stability and reliability of the equipment. This leads to the need for a detailed thermal analysis of semiconductor devices. The goal of the work is evaluation of thermal parameters of high-power bipolar transistors in plastic packages TO-252 and TO-126 by a method of thermal relaxation differential spectrometry. Thermal constants of device elements and distribution structure of thermal resistance defined as discrete and continuous spectra using previously developed relaxation impedance spectrometer. Continuous spectrum, based on higher-order derivatives of the dynamic thermal impedance, follows the model of Foster, and discrete to model of Cauer. The structure of sample thermal resistance is presented in the form of siх-chain electro-thermal RC model. Analysis of the heat flow spreading in the studied structures is carried out on the basis of the concept of thermal diffusivity. For transistor structures the area and distribution of the heat flow cross-section are determined. On the basis of the measurements the thermal parameters of high-power bipolar transistors is evaluated, in particular, the structure of their thermal resistance. For all of the measured samples is obtained that the thermal resistance of the layer planting crystal makes a defining contribution to the internal thermal resistance of transistors. In the transition layer at the border of semiconductor-solder the thermal resistance increases due to changes in the mechanism of heat transfer. Defects in this area in the form of delamination of solder, voids and cracks lead to additional growth of thermal resistance caused by the reduction of the active square of the transition layer. Method of thermal relaxation differential spectrometry allows effectively control the distribution of heat flow in high-power semiconductor devices, which is important for improving the design, improve the quality of landing crystals of power

  19. Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Chen, Wei; Yao, Zhibin; Jin, Xiaoming; Liu, Yan; Yang, Shanchao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Wang, Zhikuan [State Key Laboratory of Analog Integrated Circuit, Chongqing 400060 (China)

    2016-09-21

    A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to do experimental validations and studies on the ionizing/displacement synergistic effects in the lateral PNP bipolar transistor. The individual and mixed irradiation experiments of gamma rays and neutrons are accomplished on the transistors. The common emitter current gain, gate sweep characteristics and sub-threshold sweep characteristics are measured after each exposure. The results indicate that under the sequential irradiation of gamma rays and neutrons, the response of the gate-controlled lateral PNP bipolar transistor does exhibit ionizing/displacement synergistic effects and base current degradation is more severe than the simple artificial sum of those under the individual gamma and neutron irradiation. Enough attention should be paid to this phenomenon in radiation damage evaluation. - Highlights: • A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to facilitate the analysis of ionizing/displacement synergistic effects induced by the mixed irradiation of gamma and neutron. • The difference between ionizing/displacement synergistic effects and the simple sum of TID and displacement effects is analyzed. • The physical mechanisms of synergistic effects are explained.

  20. Field-effect transistor self-electrooptic effect device integrated photodiode, quantum well modulator and transistor

    Energy Technology Data Exchange (ETDEWEB)

    Miller, D.A.B.; Feuer, M.D.; Chang, T.Y.; Shunk, S.C.; Henry, J.E.; Burrows, D.J.; Chemla, D.S.

    1989-03-01

    The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark effect quantum well optical modulator and a metal-semiconductor field-effect transistor (MESFET), to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. As an illustration of feasibility, the authors demonstrate optical signal amplification with a single MESFET.

  1. Effect of doping and stoichiometric profile on transport in SiGe heterojunction bipolar transistor

    Science.gov (United States)

    Halilov, S.

    2016-09-01

    Based on analytical consideration and numerical simulations, it is shown how the mutually adjusted doping and stoichiometric profile results in improved frequency response and current gain in Si1-x Ge x -based heterojunction bipolar transistor. The closed-form expressions are derived for the dopant distribution within a certain mobility model which is parametrized in terms of the impurity concentration and stoichiometric grading on the same footing. With proper parametrization of the mobility, the method is suitable in both limits of high alloy scattering/low crystal ordering and low alloy scattering/highly ordered stoichiometrically graded structure. The work is corroborated by device simulations of a single-side HBT 30% stoichiometrically graded base, with detailed IV-curve, Gummel and AC analysis. It is shown that the distinct impurity distribution results in a reduced space-charge region, contributes to an effective electric field assisting the diffusion of the minority carriers and results in the saturation current density increased by 50%, the AC gain increased by 90%, the four-fold increase of the DC current gain, and improves the transition frequency from 274 to 358 GHz as compared to the case of the uniformly distributed acceptors. The obtained results may serve as a practical guide in design of highly-graded heterojunction bipolar transistors with efficient frequency response, high gain and enhanced power.

  2. Urea biosensor based on an extended-base bipolar junction transistor.

    Science.gov (United States)

    Sun, Tai-Ping; Shieh, Hsiu-Li; Liu, Chun-Lin; Chen, Chung-Yuan

    2014-01-01

    In this study, a urea biosensor was prepared by the immobilization of urease onto the sensitive membrane of an extended-base bipolar junction transistor. The pH variation was used to detect the concentration of urea. The SnO2/ITO glass, fabricated by sputtering SnO2 on the conductive ITO glass, was used as a pH-sensitive membrane, which was connected with a commercial bipolar junction transistor device. The gels, fabricated by the poly vinyl alcohol with pendent styrylpyridinium groups, were used to immobilize the urease. This readout circuit, fabricated in a 0.35-um CMOS 2P4M process, operated at 3.3V supply voltage. This circuit occupied an area of 1.0 mm × 0.9 mm. The dynamic range of the urea biosensor was from 1.4 to 64 mg/dl at the 10 mM phosphate buffer solution and the sensitivity of this range was about 65.8 mV/pUrea. The effect of urea biosensors with different pH values was considered, and the characteristics of urea biosensors based on EBBJT were described.

  3. –, – and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor

    Indian Academy of Sciences (India)

    K V Madhu; S R Kulkarni; R Damle

    2010-01-01

    This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. –, – and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are investigated by analysing the DLTS data. Two minority carrier levels, C – 0.27 eV and C – 0.58 eV and one majority carrier level, V + 0.18 eV are observed in the base collector junction of the transistor. The irradiated transistor is subjected to isochronal annealing. The influence of isochronal annealing on –, – and DLTS characteristics are monitored. Most of the deep level defects seem to anneal out above 400° C. It appears that the deep level defects generated in the bulk of the transistor lead to transistor gain degradation. A comparison of proton- and electron-induced gain degradation is made to assess the vulnerability of pnp transistor as against npn transistors.

  4. Performance of electronic switching circuits based on bipolar power transistors at low temperature

    Science.gov (United States)

    El-Ghanam, S. M.; Abdel Basit, W.

    2011-03-01

    In this paper, the performance of the bipolar power transistor of the type MJE13007 was evaluated under very low temperature levels. The investigation was carried out to establish a baseline on functionality and to determine suitability of this device for use in space applications under cryogenic temperatures. The static and dynamic electrical characteristics of the proposed transistor were studied at low temperature levels ranging from room level (300 K) down to 100 K. From which, it is clear that, several electrical parameters were affected due to operation on such very low temperature range, e.g. the threshold voltage ( V γ) increasing from 0.62 up to 1.05 V; while the current gain h FE decreases significantly from 26 down to 0.54. Also, the capacitance-voltage relationships ( C- V) of the collector-base and emitter-base junctions were studied at cryogenic temperatures, where a pronounced decrease was observed in the capacitances value due to temperature decrease. For example, at F = 50 kHz; CCB and CBE decreased from 2.33 nF down to 0.07 nF and from 36.2 down to 12 nF, respectively due to decreasing of temperature level from 300 down to 100 K. Finally the study was extended to include the dynamic characteristics and switching properties of the tested high power transistor. The dependency of both the rise and fall times ( t r, t f) on the temperature shows great variations with temperature.

  5. Comparison of 1/f noise in complementary NPN and PNP polysilicon emitter bipolar transistors

    Science.gov (United States)

    Ul Hoque, Md M.; Celik-Butler, Zeynep; Trogolo, Joe; Weiser, Douglas; Green, Keith

    2005-05-01

    1/f noise was investigated in a complementary polysilicon emitter bipolar process. Noise measurements were carried out for variable base bias resistance (RS) to analyze how the contribution of each noise source changes as RS is varied. Two noise measurement setups were used to identify different noise sources in the transistors: noise from the base current (SIB), collector current (SIC), and internal resistances (SVr). The coherence for transistors measured in both measurement setups were close to unity, implying a single dominant noise source. SIB had the dominant contribution at lower bias currents. In this case, RS was relatively larger than the input resistance of the transistor. Higher current measurements with a smaller RS showed a dominant contribution from SVr. SIB was modeled as a combination of the minority carrier diffusion fluctuations in the monosilicon and polysilicon emitter, and tunneling fluctuations through the interfacial oxide. A combination of the number and diffusion fluctuations of the minority carriers in the base was used to model SIC. It was concluded that mainly originates from the fluctuations in the internal emitter resistance, which was ascribed to the tunneling fluctuations of the majority carriers through the interfacial oxide.

  6. High-energy electron induced gain degradation in bipolar junction transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kulkarni, S.R. [Department of PG Studies in Physics, SBMJC, Jayanagar, Bangalore 560 011 (India)]. E-mail: srinivask24@hotmail.com; Ravindra, M. [Components Division, ICG, ISRO Satellite Centre, Airport Road, Bangalore 560 017 (India); Joshi, G.R. [Components Division, ICG, ISRO Satellite Centre, Airport Road, Bangalore 560 017 (India); Damle, R. [Department of Physics, Bangalore University, Bangalore 560 056 (India)]. E-mail: damleraju@yahoo.com

    2006-09-15

    This paper describes the effect of 8 MeV electron beam on the forward current gain of space borne commercial indigenous bipolar junction transistors 2N2219A (npn), 2N3019 (npn) and 2N2905A (pnp). The devices are exposed to 8 MeV electron in the biased condition. The collector characteristics and Gummel plots are obtained as a function of accumulated dose. An excess base current model as well as Messenger-Spratt equation have been used to account for the observed gain degradation. The results indicate that 8 MeV electrons of high dose rate induce gain degradation by increasing the base current as well as decrease in collector current. The current gain degradation appears to be predominantly due to displacement damage in the bulk of the transistor. Off-line measurements of the h {sub FE} of the irradiated transistors indicate that the displacement induced defect and recombination centers do not anneal even at 150 {sup o}C.

  7. Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit

    Science.gov (United States)

    Spiegel, Solon Jose; Ritter, Dan; Hamm, R. A.; Feygenson, A.; Smith, P. R.

    1995-06-01

    An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance. It is clearly indicated which elements are uniquely determined, and which elements are estimated.

  8. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.

    2008-12-01

    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  9. Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naquin, Clint; Lee, Mark [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Edwards, Hal; Mathur, Guru; Chatterjee, Tathagata; Maggio, Ken [Texas Instruments, Inc., Richardson, Texas 75243 (United States)

    2014-11-24

    Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.

  10. 4H-SiC Power Bipolar Junction Transistor with a Very Low Specific On-resistance of 2.9 mOmega.cm2

    Science.gov (United States)

    2006-04-12

    pp1381-1382, 2004. [2] C.-F. Huang and J. A. Cooper, Jr., “High current gain 4H-SiC NPN Bipolar Junction Transistors ,” IEEE Electron Device Lett...4H-SiC Power Bipolar Junction Transistor with a Very Low Specific On-resistance of 2.9 mΩ.cm2 Jianhui Zhang, member, IEEE, Petre Alexandrov...specific on-resistance (Rsp,on) of power 4H-SiC bipolar junction transistors (BJT). A 4H-SiC BJT based on a 12 um drift-layer shows a record low

  11. Base Transport and Vertical Profile Engineering in SILICON/SILICON(1-X) Germanium(x)/silicon Heterojunction Bipolar Transistors

    Science.gov (United States)

    Prinz, Erwin Josef

    1992-01-01

    Recent advances in low-temperature epitaxial growth of strained silicon-germanium alloys on silicon substrates allow bandgap engineering in silicon-based devices, with profound consequences for device design. In this thesis the improved control by Rapid Thermal Chemical Vapor Deposition of the vertical profile of a Si/Si_{1-x}Ge _{x}/Si heterojunction bipolar transistor (HBT) is used to study the effect of the shape of the conduction band in the base on device performance. Near-ideal base currents in Si/Si_ {1-x}Ge_{x}/Si HBT's, limited by hole injection into the emitter, are achieved using a non-ultra-high vacuum (UHV) technique for the first time, proving that high-lifetime Si_{1-x}Ge _{x} material can be fabricated using processes compatible with standard silicon technology. Graded-base Si/Si_{1-x}Ge_{x} /Si HBT's are fabricated in a non-UHV epitaxial technology for the first time, and their electrical characteristics are modeled analytically. The formation of parasitic potential barriers for electrons in the base of HBT's resulting from base dopant outdiffusion or non-abrupt interfaces is studied, together with the concurrent degradation of the electrical performance of the devices. This deleterious effect is especially severe in devices with narrow, heavily doped bases fabricated in an integrated circuit (IC) process because of the thermal budget employed. To alleviate this problem, intrinsic Si_{1-x}Ge_{x}^acer layers can be inserted on both sides of the base to greatly improve device performance. The tradeoff between the common-emitter current gain beta and the Early voltage V_{A} (output resistance) in heterojunction bipolar transistors is investigated for the first time. This tradeoff is important for analog application of HBT's, and it is shown that thin, narrow -gap layers in the base close to the base-collector junction reduce the Early effect dramatically leading to a high Early voltage. It is further demonstrated that even small amounts of dopant

  12. Analysis of the thin-film SOI lateral bipolar transistor and optimization of its output characteristics for high-temperature applications

    Science.gov (United States)

    Adriaensen, S.; Flandre, D.

    2002-09-01

    In this paper, we investigate and optimize the static characteristics of NPN lateral bipolar transistors implemented in a thin-film fully-depleted SOI CMOS process for high-temperature analog applications. The basic lateral SOI bipolar device, which shows good behaviour in high-temperature circuits in spite of its relatively poor performances, is firstly described regarding its process and layout parameters. Then the concept of the graded-base bipolar transistor is introduced. This device presents significantly improved output characteristics while preserving standard current gain and CMOS process compatibility. Measurements and simulations are used to demonstrate the improvements of the breakdown voltage and the Early voltage of the bipolar device.

  13. Microwave damage susceptibility trend of a bipolar transistor as a function of frequency

    Science.gov (United States)

    Ma, Zhen-Yang; Chai, Chang-Chun; Ren, Xing-Rong; Yang, Yin-Tang; Chen, Bin; Song, Kun; Zhao, Ying-Bo

    2012-09-01

    We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n+ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.

  14. Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal

    Science.gov (United States)

    Then, H. W.; Walter, G.; Feng, M.; Holonyak, N.

    2008-10-01

    We report the improvement, from 10.5to22GHz, in the optical modulation bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, β(=ICO/IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the "faster" QW collector (reduced β) and differential gain, result in a higher 3dB bandwidth (f3dB=1/2πτ ).

  15. Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate

    Science.gov (United States)

    Umezawa, Hitoshi; Shikata, Shin-ichi; Kato, Yukako; Mokuno, Yoshiaki; Seki, Akinori; Suzuki, Hiroshi; Bessho, Takeshi

    2017-01-01

    Polycrystalline diamond films have been utilized as direct bonding aluminum (DBA) substrates to improve cooling efficiency. A diamond film with a high quality factor was characterized by Raman spectroscopy and showed a high thermal conductivity of more than 1800 W m-1 K-1 and a low leakage current, even at an applied bias of 3 kV, because of the suppression of electrical conduction through the grain boundaries. The operating temperatures of Insulated-gate bipolar transistors (IGBTs) on diamond DBAs were 20-28% lower than those on AlN DBAs. The thermal resistivity of the diamond DBA module was 0.32 °C/W. The uniformity of the temperature distribution on a diamond DBA was excellent.

  16. Nonstationary 1/f noise in InP/InGaAs heterojunction bipolar transistors

    Science.gov (United States)

    Alers, G. B.; Martin, S.; Hamm, R. A.; Feygenson, A.; Yadvish, R. D.

    1995-01-01

    1/f noise for most electronic systems is stationary in that repeated measurements of the noise power will give the same result within statistical uncertainty. In contrast, we have observed highly nonstationary 1/f noise in the output current of a series of InP based heterojunction bipolar transistors (HBTs). We have applied higher order statistics to the non-Gaussian fluctuations of these devices to probe the source of the intrinsic 1/f noise. We find signatures of superimposed Lorentzians making up an otherwise featureless 1/f noise spectrum consistent with generation-recombination-type noise in the base-emitter region of the device. The nonstationarity of these devices scales inversely with the device size as would be expected for an intrinsic mechanism. We suggest that these techniques may be utilized to a greater extent in the future as device sizes are reduced.

  17. A Vertically Integrated Junctionless Nanowire Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; Choi, Yang-Kyu

    2016-03-09

    A vertically integrated junctionless field-effect transistor (VJ-FET), which is composed of vertically stacked multiple silicon nanowires (SiNWs) with a gate-all-around (GAA) structure, is demonstrated on a bulk silicon wafer for the first time. The proposed VJ-FET mitigates the issues of variability and fabrication complexity that are encountered in the vertically integrated multi-NW FET (VM-FET) based on an identical structure in which the VM-FET, as recently reported, harnesses a source and drain (S/D) junction for its operation and is thus based on the inversion mode. Variability is alleviated by bulk conduction in a junctionless FET (JL-FET), where current flows through the core of the SiNW, whereas it is not mitigated by surface conduction in an inversion mode FET (IM-FET), where current flows via the surface of the SiNW. The fabrication complexity is reduced by the inherent JL structure of the JL-FET because S/D formation is not required. In contrast, it is very difficult to dope the S/D when it is positioned at each floor of a tall SiNW with greater uniformity and with less damage to the crystalline structure of the SiNW in a VM-FET. Moreover, when the proposed VJ-FET is used as nonvolatile flash memory, the endurance and retention characteristics are improved due to the above-mentioned bulk conduction.

  18. 不同发射区周长面积比双极晶体管的电离辐照效应%Ionizing Irradiation Effects for Emitter Perimeter Area Ratios of the Bipolar Transistor

    Institute of Scientific and Technical Information of China (English)

    吕曼; 张小玲; 张彦秀; 谢雪松; 孙江超; 王鹏鹏; 吕长志

    2013-01-01

    The ionizing irradiation of total dose experiments was carried out on npn and pnp two types of bipolar transistors, which have the same fabrication process, but different ratio of perimeter and area in emitter region. Various damage mechanisms of ionizing radiation of total dose and annealing effects of the bipolar transistors were researched, and the key factors of ionizing irradiation of total dose in bipolar transistors were analyzed. Experimental results show that the bipolar transistors with larger ratio of perimeter and area in emitter region are more sensitive to ionizing irradiation than the smaller ones in the same condition. Positive oxide charge is the key factor of the radiation damage for npn, while the interface trap of the charge density is for lateral pnp, A measure of improving the ionizing irradiation hardness of bipolar transistors was proposed. An experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided, as well as the linear integrated circuits which containing bipolar transistors.%对制作工艺相同但发射区周长面积比不同的npn和pnp两种类型双极晶体管进行了辐照实验,研究了双极晶体管的电离总剂量辐射损伤机理和退火效应,分析了影响双极晶体管电离总剂量辐射特性的关键因素.实验结果表明,在相同累积电离辐射总剂量条件下,发射区周长面积比大的双极晶体管辐照敏感性更强,对于npn双极晶体管其电离总剂量辐照损伤的关键因素是辐照感生的氧化层正电荷,而影响横向pnp的关键因素为辐照感生的界面陷阱电荷的密度.提出了一种提高双极晶体管抗电离总剂量辐射性能的措施,为探索双极晶体管以及含有双极晶体管的电子线路的抗电离总剂量辐射加固技术提供了理论和实验依据.

  19. Minority carrier properties of carbon-doped GaInAsN bipolar transistors

    Science.gov (United States)

    Welser, R. E.; Setzko, R. S.; Stevens, K. S.; Rehder, E. M.; Lutz, C. R.; Hill, D. S.; Zampardi, P. J.

    2004-08-01

    We have developed an InGaP/GaInAsN/GaAs double heterojunction bipolar transistor technology that substantially improves upon existing GaAs-based HBTs. Band-gap engineering with dilute nitride GaInAsN alloys is utilized to enhance a variety of key device characteristics, including lower operating voltages, improved temperature stability and increased RF performance. Furthermore, GaInAsN-based HBTs are fully compatible with existing high-volume MOVPE and IC fabrication processes. While poor lifetimes have limited the applicability of dilute nitride materials in photovoltaic applications, we achieve minority carrier characteristics that approach those of conventional GaAs HBTs. We have found that a combination of growth algorithm optimization and compositional grading are critical for improving minority carrier properties in GaInAsN. In this work, we characterize the impact of both carbon and nitrogen doping on minority carrier lifetimes in GaInAsN base layers. Minority carrier lifetimes are extracted from direct measurements on bipolar transistor device structures. Specifically, lifetime is derived from the DC current gain, or bgr, taken in the bias regime dominated by neutral base recombination. Lifetimes extracted using this technique are observed to be inversely proportional to both carbon and nitrogen doping. As with conventional C-doped GaAs HBTs, current soaking (i.e. burn-in) is found to have a significant impact on GaInAsN HBTs. While we can replicate poor as-grown lifetimes consistent with those reported in photovoltaic dilute nitride materials, our best material to date exhibits nearly 30 × higher lifetime after current soaking.

  20. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    Institute of Scientific and Technical Information of China (English)

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiaa Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe hererojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusious.

  1. The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters

    Institute of Scientific and Technical Information of China (English)

    Ma Zhen-Yang; Chai Chang-Chun; Ren Xing-Rong; Yang Yin-Tang; Zhao Ying-Bo; Qiao Li-Ping

    2013-01-01

    In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves (HPMs),and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.

  2. Incident particle range dependence of radiation damage in a power bipolar junction transistor

    Science.gov (United States)

    Liu, Chao-Ming; Li, Xing-Ji; Geng, Hong-Bin; Rui, Er-Ming; Guo, Li-Xin; Yang, Jian-Qun

    2012-10-01

    The characteristic degradations in silicon NPN bipolar junction transistors (BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon (C), 40-MeV silicon (Si), and 40-MeV chlorine (Cl) ions respectively. Different electrical parameters are measured in-situ during the exposure of heavy ions. The experimental data shows that the changes in the reciprocal of the gain variation (Δ(1/β)) of 3DD155 transistors irradiated respectively by 25-MeV C, 40-MeV Si, and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence. The Δ(1/β) of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence, a little smaller when the device is irradiated by 40-MeV Si ions, and smallest in the case of the 40-MeV Cl ions irradiation. The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.

  3. Incident particle range dependence of radiation damage in a power bipolar junction transistor

    Institute of Scientific and Technical Information of China (English)

    Liu Chao-Ming; Li Xing-Ji; Geng Hong-Bin; Rui Er-Ming; Guo Li-Xin; Yang Jian-Qun

    2012-01-01

    The characteristic degradations in silicon NPN bipolar junction transistors (BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon (C),40-MeV silicon (Si),and 40-MeV chlorine (C1) ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation (△(1/β)) of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV C1 ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The △(1/β) of 3DDl55 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV C1 ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.

  4. Radiative recombination in GaN/InGaN heterojunction bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Tsung-Ting; Lee, Yi-Che; Kim, Hee-Jin; Ryou, Jae-Hyun; Kim, Jeomoh; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang, E-mail: shensc@ece.gatech.edu [Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States)

    2015-12-14

    We report an electroluminescence (EL) study on npn GaN/InGaN heterojunction bipolar transistors (HBTs). Three radiative recombination paths are resolved in the HBTs, corresponding to the band-to-band transition (3.3 eV), conduction-band-to-acceptor-level transition (3.15 eV), and yellow luminescence (YL) with the emission peak at 2.2 eV. We further study possible light emission paths by operating the HBTs under different biasing conditions. The band-to-band and the conduction-band-to-acceptor-level transitions mostly arise from the intrinsic base region, while a defect-related YL band could likely originate from the quasi-neutral base region of a GaN/InGaN HBT. The I{sub B}-dependent EL intensities for these three recombination paths are discussed. The results also show the radiative emission under the forward-active transistor mode operation is more effective than that using a diode-based emitter due to the enhanced excess electron concentration in the base region as increasing the collector current increases.

  5. Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chaoming; Li, Xingji, E-mail: lxj0218@hit.edu.cn; Yang, Jianqun; Rui, Erming

    2014-01-21

    Isochronal anneal sequences have been carried out on 3DG112 silicon NPN bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve is utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. We find that the base current (I{sub B}) decreases with the increasing annealing temperature, while the collector current (I{sub C}) remains invariable. The current gain varies slightly, when the annealing temperature (T{sub A}) is lower than 400 K, while varies rapidly at T{sub A}<450 K, and the current gain of the 3DG112 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. Deep level transient spectroscopy (DLTS) data is used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V{sub 2}(−/0)+V-P traps are the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V{sub 2}(−/0)+V-P peak has many of the characteristics expected for the current gain degradation.

  6. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-charge transfer for the bipolar junction photogate is established in detail. Some numerical simulations are obtained under 0.6μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-charge at applied voltage.

  7. Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

    Science.gov (United States)

    Ponchak, George E. (Technical Monitor); Bhattacharya, Pallab

    2003-01-01

    Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

  8. Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications

    OpenAIRE

    Kumar, M. Jagadesh; D.V.Rao

    2010-01-01

    A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors demonstrate for the first time that the proposed SiC emitter lateral NPM transistor shows superior per...

  9. The Bipolar Field-Effect Transistor: ⅩⅢ. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

    Institute of Scientific and Technical Information of China (English)

    薩支唐; 揭斌斌

    2009-01-01

    This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These ex-amples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impure-thin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concen-tration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

  10. An Evaluation of Bipolar Junction Transistors as Dosimeter for Megavoltage Electron Beams

    Energy Technology Data Exchange (ETDEWEB)

    Passos, Renan Garcia de; Vidal da Silva, Rogerio Matias; Silva, Malana Marcelina Almeida; Souza, Divanizia do Nascimento [Departamento de Fisica, Universidade Federal de Sergipe, Av. Marechal Rondon, sn, Sao Cristovao, SE, 49100-000 (Brazil); Pereira dos Santos, Luiz Antonio [Comissao Nacional de Energia Nuclear, CNEN/CRCN-NE, Av. Prof. Luiz Freire, 1, Recife, PE, 50740-540 (Brazil)

    2015-07-01

    Dosimetry is an extremely important field in medical applications of radiation and nowadays, electron beam is a good option for superficial tumor radiotherapy. Normally, the applied dose to the patient both in diagnostic and therapy must be monitored to prevent injuries and ensure the success of the treatment, therefore, we should always look for improving of the dosimetric methods. Accordingly, the aim of this work is about the use of a bipolar junction transistor (BJT) for electron beam dosimetry. After previous studies, such an electronic device can work as a dosimeter when submitted to ionizing radiation of photon beam. Actually, a typical BJT consists of two PN semiconductor junctions resulting in the NPN structure device, for while, and each semiconductor is named as collector (C), base (B) and emitter (E), respectively. Although the transistor effect, which corresponds to the current amplification, be accurately described by the quantum physics, one can utilize a simple concept from the circuit theory: the base current IB (input signal) is amplified by a factor of β resulting in the collector current IC (output signal) at least one hundred times greater the IB. In fact, the BJT is commonly used as a current amplifier with gain β=I{sub C}/I{sub B}, therefore, it was noticed that this parameter is altered when the device is exposed to ionizing radiation. The current gain alteration can be explained by the trap creation and the positive charges build up, beside the degradation of the lattice structure. Then, variations of the gain of irradiated transistors may justify their use as a dosimeter. Actually, the methodology is based on the measurements of the I{sub C} variations whereas I{sub B} is maintained constant. BC846 BJT type was used for dose monitoring from passive-mode measurements: evaluation of its electrical characteristic before and after irradiation procedure. Thus, IC readings were plotted as a function of the applied dose in 6 MeV electron beam

  11. Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions

    Science.gov (United States)

    Liu, Chaoming; Li, Xingji; Yang, Jianqun; Rui, Erming

    2014-01-01

    Isochronal anneal sequences have been carried out on 3DG112 silicon NPN bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve is utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. We find that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) remains invariable. The current gain varies slightly, when the annealing temperature (TA) is lower than 400 K, while varies rapidly at TAtransistor. Deep level transient spectroscopy (DLTS) data is used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(-/0)+V-P traps are the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V2(-/0)+V-P peak has many of the characteristics expected for the current gain degradation.

  12. Effect of bias condition on heavy ion radiation in bipolar junction transistors

    Institute of Scientific and Technical Information of China (English)

    Liu Chao-Ming; Li Xing-Ji; Geng Hong-Bin; Yang De-Zhuang; He Shi-Yu

    2012-01-01

    The characteristic degradations in a silicon NPN bipolar junction transistor (BJT) of 3DG142 type are examined under irradiation with 40-MeV chlorine (Cl) ions under forward,grounded,and reverse bias conditions,respectively.Different electrical parameters are in-situ measured during the exposure under each bias condition.From the experimental data,a larger variation of base current (IB) is observed after irradiation at a given value of base-emitter voltage (VBE),while the collector current is slightly affected by irradiation at a given VBE.The gain degradation is affected mostly by the behaviour of the base current.From the experimental data,the variation of current gain in the case of forward bias is much smaller than that in the other conditions.Moreover,for 3DG142 BJT,the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence,while at high fluence,the gain degradation in the reverse bias case becomes smaller than that in the grounded case.

  13. Effect of bias condition on heavy ion radiation in bipolar junction transistors

    Science.gov (United States)

    Liu, Chao-Ming; Li, Xing-Ji; Geng, Hong-Bin; Yang, De-Zhuang; He, Shi-Yu

    2012-08-01

    The characteristic degradations in a silicon NPN bipolar junction transistor (BJT) of 3DG142 type are examined under irradiation with 40-MeV chlorine (Cl) ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, a larger variation of base current (IB) is observed after irradiation at a given value of base-emitter voltage (VBE), while the collector current is slightly affected by irradiation at a given VBE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.

  14. Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates

    Science.gov (United States)

    Qifeng, Zhao; Yiqi, Zhuang; Junlin, Bao; Wei, Hu

    2015-06-01

    Ionizing-radiation-induced current gain degradation in NPN bipolar junction transistors is due to an increase in base current as a result of recombination at the surface of the device. A model is presented which identifies the physical mechanism responsible for current gain degradation. The increase in surface recombination velocity due to interface states results in an increase in base current. Besides, changing the surface potential along the base surface induced by the oxide-trapped charges can also lead to an increased base current. By combining the production mechanisms of oxide-trapped charges and interface states, this model can explain the fact that the current gain degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 70 krad(Si). The low dose rate was 0.1 rad(Si)/s and the high dose rate was 10 rad(Si)/s. The model accords well with the experimental results. Project supported by the National Natural Science Foundation of China (Nos. 61076101, 61204092).

  15. Radiation effects on bipolar junction transistors induced by 25 MeV carbon ions

    Science.gov (United States)

    Liu, Chaoming; Li, Xingji; Geng, Hongbin; Zhao, Zhiming; Yang, Dezhuang; He, Shiyu

    2010-12-01

    The characteristic degradation in silicon NPN bipolar junction transistors (BJTs) of 3DG112 type is examined under the irradiation with 25 MeV carbon (C) ions and various bias conditions. Different electrical parameters were measured in-situ during the exposure under each bias condition. From the experimental data, larger variation of base current ( IB) is observed after irradiation at a given value of base-emitter voltage ( VBE), while the collector current is only slightly affected by irradiation at a given VBE. The gain degradation is mostly affected by the behavior of the base current. The change in the reciprocal of current gain (Δ(1/ β)) increases linearly with increasing the C ions fluence. The degradation of the NPN BJTs under various bias conditions during irradiation was studied. Compared to the case where the terminals are grounded, at a given fluence, the change in the reciprocal of current gain varies slightly less when the base-emitter junction is forward biased. On the other hand, there is no distinction for the change in the reciprocal of current gain between the case of reverse-biased base-emitter junction and that of all terminals grounded for the NPN BJTs at a given fluence.

  16. Solution-processible organic-inorganic hybrid bipolar field-effect transistors

    Science.gov (United States)

    Chae, Gil Jo; Kim, Kang Dae; Cho, Shinuk; Walker, Bright; Seo, Jung Hwa

    2016-04-01

    Organic-inorganic hybrid bipolar field-effect transistors (HBFETs) comprising a layer of p-type organic poly(3-hexylthiophene) (P3HT) separated from a parallel layer of n-type inorganic zinc oxide (ZnO) were demonstrated by solution processing. In order to achieve balanced hole and electron mobilities, we initially optimized the hole-transporting P3HT channel by the addition of the polar non-solvent acetonitrile (AN) to P3HT solutions in chloroform, which induced a selfassembled nano-fibril morphology and an enhancement of hole mobilities. For the electron channel, a wet-chemically-prepared ZnO layer was optimized by thermal annealing. Unipolar P3HT FET with 5% AN exhibited the highest hole mobility of 7.20 × 10-2 cm2V-1s-1 while the highest electron mobility (3.64 × 10-2 cm2V-1s-1) was observed in unipolar ZnO FETs annealed at 200°C. The organic-inorganic HBFETs consisting of the P3HT layer with 5% AN and ZnO annealed at 200°C exhibited well-balanced hole and electron mobilities of 1.94 × 10-2 cm2V-1s-1 and 1.98 × 10-2 cm2V-1s-1, respectively.

  17. Heat Removal from Bipolar Transistor by Loop Heat Pipe with Nickel and Copper Porous Structures

    Directory of Open Access Journals (Sweden)

    Patrik Nemec

    2014-01-01

    Full Text Available Loop heat pipes (LHPs are used in many branches of industry, mainly for cooling of electrical elements and systems. The loop heat pipe is a vapour-liquid phase-change device that transfers heat from evaporator to condenser. One of the most important parts of the LHP is the porous wick structure. The wick structure provides capillary force to circulate the working fluid. To achieve good thermal performance of LHP, capillary wicks with high permeability and porosity and fine pore radius are expected. The aim of this work was to develop porous structures from copper and nickel powder with different grain sizes. For experiment copper powder with grain size of 50 and 100 μm and nickel powder with grain size of 10 and 25 μm were used. Analysis of these porous structures and LHP design are described in the paper. And the measurements’ influences of porous structures in LHP on heat removal from the insulated gate bipolar transistor (IGBT have been made.

  18. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

    Institute of Scientific and Technical Information of China (English)

    Liu Jin; Chen Yongguang; Tan Zhiliang; Yang Jie; Zhang Xijun; Wang Zhenxing

    2011-01-01

    Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects,and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability.Therefore,the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally.100 samples have been tested for multiple pulses until a failure occurred.Meanwhile,the distributions of electric field,current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici.There is a good agreement between the simulated results and failure analysis.In the case of a thermal couple,the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects.The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure.When the ESD level increased to 1.3 kV,the collector-base junction has been burnt out first.The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic.In addition,fatigue phenomena are observed during ESD testing,with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

  19. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

    Science.gov (United States)

    Jin, Liu; Yongguang, Chen; Zhiliang, Tan; Jie, Yang; Xijun, Zhang; Zhenxing, Wang

    2011-10-01

    Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

  20. Improved performance of bipolar charge plasma transistor by reducing the horizontal electric field

    Science.gov (United States)

    Bramhane, Lokesh Kumar; Singh, Jawar

    2017-04-01

    In this paper, we have proposed a modified lateral bipolar charge plasma transistor (BCPT). The appropriate work function engineering is used to induce the electron-hole concentrations under different regions. The reduced work function difference and absence of oxide layer (tox) in the proposed lateral BCPT reduce the horizontal electric field (EX) at the emitter. Also, reduced work function difference at base metal contact decreases the electric field at base-emitter and base-collector junctions. 2-D TCAD simulations of the proposed device reveal that there are evenly spaced output characteristic curves, improved cut-off frequency and breakdown voltage. The reduction in horizontal electric field about one-fourth compared to the conventional lateral BCPT results in realistic current gain (β) and reduced on-set voltage makes proposed device suitable for low power applications. The proposed device exhibits improved cut-off frequency (fT = 7.5 GHz) compared to the lateral BCPT (3.7 GHz) and improved current gain (37.67) and same cut-off frequency (= 7.5 GHz) compared to the conventional BJT (β = 26.5 &fT = 7.5 GHz).

  1. Development of a planar heterojunction bipolar transistor for very high speed logic

    Science.gov (United States)

    Long, Stephen I.; Kroemer, Herbert; Rao, M. A.

    1987-10-01

    The following describes the results of research on 3 to 5 molecular beam epitaxial (MBE) growth, material characterization and the fabrication of heterostructure bipolar transistors (HBT) for very-high-speed logic applications. Work on the InGaP/GaAs heterojunction (HJ) was completed. Isotype HJs were grown and evaluated by a CV reconstruction method in order to determine the energy band offsets. It was found that delta Ec = 0.22 eV and delta Ev = 0.24 eV for the lattice matched composition. An inverted AlGaAs GaAs HBT was investigated, and it was shown that an undoped, graded region between emitter and base would eliminate the conduction band spike and provide a buffer for Be diffusion. A new direction toward improvement in performance and fabrication techniques for the AlGaAs/GaAs HBT was successfully demonstrated. Graded-bandgap nonalloyed ohmic contacts using n+ InAs for the AlGaAs emitter and p+ GaSb for the GaAs base were provided by selective epitaxial regrowth. The MBE growth conditions for grading from GaAs to InAs and GaAs to GaSb were determined. Low specific contact resistances were observed for both contact types. A self-aligned AlGaAs/GaAs HBT with graded-gap contacts to both base and emitter was demonstrated.

  2. GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

    Science.gov (United States)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2017-01-01

    Heterojunction bipolar transistors with GaAsxP1-x bases and collectors and InyGa1-yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different GaAsxP1-x compositions were used, ranging from x = 0.825 to x = 1 (GaAs), while the InyGa1-yP composition was adjusted to remain lattice-matched to the GaAsP. DC gain close to or exceeding 100 is measured for 60 μm diameter devices of all compositions. Physical mechanisms governing base current and therefore current gain are investigated. The collector current is determined not to be affected by the barrier caused by the conduction band offset between the InGaP emitter and GaAsP base. While the collector current for the GaAs/InGaP devices is well-predicted by diffusion of electrons across the quasi-neutral base, the collector current of the GaAsP/InGaP devices exceeds this estimate by an order of magnitude. This results in higher transconductance for GaAsP/InGaP than would be estimated from known material properties.

  3. Optimization, analysis, and fabrication of silicon-germanium heterojunction bipolar transistors

    Science.gov (United States)

    Kwok, Kai Hay

    This thesis deals with the optimization, analysis, and fabrication of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). Two vertical base profile optimization studies for improving the high-frequency performance of SiGe HBTs are presented. In the first study, the Ge profile is optimized for the minimum contribution of the emitter and base delay times to the transition frequency in the low-injection regime. A fixed Ge dose is used as the optimization constraint. Non-quasi-static effects at high frequencies are taken into account. It is shown that the graded Ge profile is more effective than the box Ge profile in minimizing the two delay time contributors for SiGe HBTs with today's typical emitter and base dimensions. In the second optimization study, the base doping and Ge profiles are optimized for minimum base delay time in low- and high-injection regimes before the onset of Kirk effect. Fixed Ge dose, intrinsic base resistance, and base concentration near the emitter are adopted as optimization constraints. The effect of plasma-induced bandgap narrowing in high injection is considered. An iteration scheme for calculating the base delay time for a wide range of collector current densities is developed. It is shown that the retrograde base doping profile with graded Ge profiles gives the minimum base delay time in both low- and high-injection regimes. An analysis of the retrograde portion of a base retrograde doping profile in a SiGe HBT is also performed. A closed-form analytical expression of the base delay time is derived with various physical effects taken into consideration. The relative importance of the physical effects is assessed. It is found that the adverse effect of the retrograde portion of the base retrograde doping profile on the base delay time is less pronounced than expected, especially when a high Ge grading exists across the base. It is also shown that the effect of the field dependency of the electron diffusivity needs to be

  4. The Bipolar Field-Effect Transistor:Ⅶ. The Unipolar Current Mode for Analog-RF Operation(Two-MOS-Gates on Pure-Base

    Institute of Scientific and Technical Information of China (English)

    Jie Binbin; Sah Chih-Tang

    2009-01-01

    This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor (BiFET) under the unipolar (electron) current mode of operation, with bipolar (elec-tron and hole) charge distributions considered. The model BiFET example presented has two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both edges of the thin base. The hole contacts on both edges of the thin pure base layer are grounded to give zero hole current. This 1-transistor analog-RF Basic Building Block nMOS amplifier circuit, operated in the unipolar current mode, complements the 1-transistor digital Basic Build Block CMOS voltage inverter circuit, operated in the bipolar-current mode just presented by us.

  5. Integrated logic circuits using single-atom transistors.

    Science.gov (United States)

    Mol, J A; Verduijn, J; Levine, R D; Remacle, F; Rogge, S

    2011-08-23

    Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal-oxide-semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch.

  6. DLTS Studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions

    Science.gov (United States)

    Liu, Chaoming; Li, Xingji; Geng, Hongbin; Rui, Erming; Yang, Jianqun; Xiao, Liyi

    2012-10-01

    The characteristic degradation in silicon NPN bipolar junction transistors (BJTs) of 3DG130 type is examined under the irradiation with 35 MeV silicon (Si) ions under forward, grounded and reverse bias conditions, respectively. Different electrical parameters were in-situ measured during the exposure under each bias condition. Using deep level transient spectroscopy (DLTS), deep level defects in the base-collector junction of 3DG130 transistors under various bias conditions are measured after irradiation. The activation energy, capture cross section and concentration of observed deep level defects are measured using DLTS technique. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions could affect the concentration of deep level defects, and the displacement damage induced by heavy ions.

  7. Effect of proton and electron-irradiation intensity on radiation-induced damages in silicon bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, Yu.A.; Gorin, B.M.; Kozhevnikov, V.P.; Mikhnovich, V.V.; Gusev, L.I.

    1981-11-01

    The increase of radiation-induced damages of bipolar n-p-n transistors 8-12 times with the irradiation intensity decrease by protons from 4.07x1010 to 2.5x107 cm-2 x c-1 has been found experimentally. Damages of p-n-p transistors vary in the opposite way - they are decreased 2-3 times with the irradiation intensity decrease within the same limits. The dependence of damages on intensity of proton irradiation occurs at the dose rate by three orders less than it has been observed for electron irradiation. The results obtained are explained by the dependence of radiation defect formation reactions on charge state of defects with account for the role of formation of disordering regions upon proton irradiation.

  8. Influence of the flux density on the radiation damage of bipolar silicon transistors by protons and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, Y.; Gorin, B.; Kozhevnikov, V.; Mikhnovich, V.; Gusev, L.

    1981-11-01

    It was found experimentally that the radiation damage of bipolar n-p-n transistors increased by a factor of 8--12 when the proton flux density was reduced from 4.07 x 10/sup 10/ to 2.5 x 10/sup 7/ cm/sup -2/ sec /sup -1/. In the case of p-n-p transistors the effect was opposite: there was a reduction in the radiation damage by a factor of 2--3 when the dose rate was lowered between the same limits. A similar effect was observed for electrons but at dose rates three orders of magnitude greater. The results were attributed to the dependences of the radiation defect-forming reactions on the charge state of defects which was influenced by the formation of disordered regions in the case of proton irradiation.

  9. Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

    Science.gov (United States)

    Niedra, Janis M.

    2006-01-01

    Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

  10. Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    LI,N.Y.; CHANG,PING-CHIH; BACA,ALBERT G.; LAROCHE,J.R.; REN,F.; ARMOUR,E.; SHARPS,P.R.; HOU,H.Q.

    2000-08-01

    The authors demonstrate, for the first time, both functional Pnp AlGaAs/InGaAsN/GaAs (Pnp InGaAsN) and Npn InGaP/InGaAsN/GaAs (Npn InGaAsN) double heterojunction bipolar transistors (DHBTs) using a 1.2 eV In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} as the base layer for low-power electronic applications. The Pnp InGaAsN DHBT has a peak current gain ({beta}) of 25 and a low turn-on voltage (V{sub ON}) of 0.79 V. This low V{sub ON} is {approximately} 0.25 V lower than in a comparable Pnp AlGAAs/GaAs HBT. For the Npn InGaAsN DHBT, it has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in an InGaP/GaAs HBT. A peak {beta} of 7 with nearly ideal I-V characteristics has been demonstrated. Since GaAs is used as the collector of both Npn and Pnp InGaAsN DHBTs, the emitter-collector breakdown voltage (BV{sub CEO}) are 10 and 12 V, respectively, consistent with the BV{sub CEO} of Npn InGaP/GaAs and Pnp AlGaAs/GaAs HBTs of comparable collector thickness and doping level. All these results demonstrate the potential of InGaAsN DHBTs as an alternative for application in low-power electronics.

  11. New RAD-Hard STRH3260L6 Bipolar And STRH100N10 Mosfet Power Transistors

    Science.gov (United States)

    Camonita, Giuseppe; Pintacuda, Francesco

    2011-10-01

    This article describes two new power discrete components from STMicroelectronics, specifically offered for Space applications. The STRH3260L6 is a double bipolar rad-hard transistor in an SMD package that houses two complementary devices, one NPN and one PNP. The STRH100N10 is an N-channel rad-hard power MOSFET, the first that is ESCC qualified and available in Europe without procurement restrictions. The purpose of this writing is to give details about the devices' main features, characterization for static, dynamic and radiation performances.

  12. High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage

    Institute of Scientific and Technical Information of China (English)

    JIN Zhi; SU Yong-Bo; CHENG Wei; LIU Xin-Yu; XU An-Huai; QI Ming

    2008-01-01

    We design and fabricate an InGaAs/InP double heterostructure bipolar transistor (DHBT). The spike of the conduction band discontinuity between InGaAs base and InP collector is successfully eliminated by insertion of an InGaAs layer and two InGaAsP layers. The current gain cutoff frequency and maximum oscillation frequency are as high as 155 and 144GHz. The breakdown voltage in common-emitter configuration is more than 7V. The high cutoff frequency and high breakdown voltage make high-speed and high-power circuits possible.

  13. Composition induced design considerations for InP/Ga xIn 1- xAs heterojunction bipolar transistors

    Science.gov (United States)

    Mohammad, S. Noor

    2002-12-01

    Several design principles based on compositional grading and heavy doping of the base region of a heterojunction bipolar transistor (HBT) have been presented. Physical and technological advantages underlying composition induced design criteria of InP/Ga xIn 1- xAs HBTs have been discussed. A number of issues such as superlattice based grading in the base region, base resistance vs base region grading, the emitter-base junction design, tradeoffs between base region grading and the nonuniform doping of the base region, and the surface recombination at the external base region, have been articulated.

  14. Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Qu Jiang-Tao

    2011-01-01

    An analytical expression for the collector resistance of a novel vertical SiGe heteroj unction bipolar transistor (HBT)on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.

  15. Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

    Institute of Scientific and Technical Information of China (English)

    Wang Yongshun; Feng Jingjing; Liu Chunjuan; Wang Zaixing; Zhang Caizhen; Chang Peng

    2011-01-01

    The failure of a bipolar static induction transistor (BSIT) often occurs in the transient process between the conducting-state and the blocking-state,so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices.The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper.The influences of material,structural and technological parameters on the dynamical performances of BSITs are discussed.The mechanism underlying the transient conversion process is analyzed in depth.The technological approaches are developed to improve the dynamical characteristics of BSITs.

  16. High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz

    Institute of Scientific and Technical Information of China (English)

    JIN Zhi; SU Yong-bo; CHENG Wei; LIU Xin-Yu; XU An-Huai; QI Ming

    2008-01-01

    @@ A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of each finger is 1 × 15 μm2. The breakdown voltage is more than 7V, the maximum collector current could be more than 100mA. The current gain cutoff frequency is as high as 155 GHz and the maximum oscillation frequency reaches 253 GHz. The heterostructure bipolar transistor can offer more than 70mW class-A maximum output power at W band and the maximum power density can be as high as 1.2 W/mm.

  17. Transistors

    CERN Document Server

    Kendall, E J M

    2013-01-01

    Transistors covers the main thread of transistor development. This book is organized into 2 parts encompassing 19, and starts with an overview of the semi-conductor physics pertinent to the understanding of transistors, as well as features and applications of the point contact devices and junction devices. The subsequent part deals with the modulation of conductance of thin films of conductors by surface charges, the metal-semi conductor, and the semi-conductor triode. These topics are followed by discussions on the nature of the forward current, physical principles in transistor, the hole inj

  18. A bipolar analog front-end integrated circuit for the SDC silicon tracker

    Energy Technology Data Exchange (ETDEWEB)

    Kipnis, I.; Spieler, H.; Collins, T.

    1993-11-01

    A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using AT&T`s CBIC-U2, 4 GHz f{sub T} complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 {mu}m pitch double-sided silicon strip detector. The chip measures 6.8 mm {times} 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a {Phi}=10{sup 14} protons/cm{sup 2} have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process.

  19. Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

    Institute of Scientific and Technical Information of China (English)

    Jin Dong-Yue; Zhang Wan-Rong; Chen Liang; Fu Qiang; Xiao Ying; Wang Ren-Qing; Zhao Xin

    2011-01-01

    The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.

  20. Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient

    Science.gov (United States)

    Xue, Peng; Fu, Guicui

    2017-03-01

    The dynamic avalanche has a huge impact on the switching robustness of carrier stored trench bipolar transistor (CSTBT). The purpose of this work is to investigate the CSTBT's dynamic avalanche mechanism during clamped inductive turn-off transient. At first, with a Mitsubishi 600 V/150 A CSTBT and a Infineon 600 V/200 A field stop insulated gate bipolar transistor (FS-IGBT) utilized, the clamped inductive turn-off characteristics are obtained by double pulse test. The unclamped inductive switching (UIS) test is also utilized to identify the CSTBT's clamping voltage under dynamic avalanche condition. After the test data analysis, it is found that the CSTBT's dynamic avalanche is abnormal and can be triggered under much looser condition than the conventional buffer layer IGBT. The comparison between the FS-IGBT and CSTBT's experimental results implies that the CSTBT's abnormal dynamic avalanche phenomenon may be induced by the carrier storage (CS) layer. Based on the semiconductor physics, the electric field distribution and dynamic avalanche generation in the depletion region are analyzed. The analysis confirms that the CS layer is the root cause of the CSTBT's abnormal dynamic avalanche mechanism. Moreover, the CSTBT's negative gate capacitance effect is also investigated to clarify the underlying mechanism of the gate voltage bump observed in the test. In the end, the mixed-mode numerical simulation is utilized to reproduce the CSTBT's dynamic avalanche behavior. The simulation results validate the proposed dynamic avalanche mechanisms.

  1. Study of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    G. M. Khanduri

    2004-01-01

    Full Text Available The cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator. A conventional NPN Si/SiGe/Si Double-heterojunction bipolar transistor (SiGe DHBT having uniform 14%Ge in the base region has been investigated for comparison. The analysis shows the formation of a retarding potential barrier for minority carrier electrons at the basecollector heterojunction of the DHBT structure. Whereas, the base-collector homojunction of the SiGe SHBT structure, having a uniform 14%Ge profile in its base and collector, inhibits the formation of such a retarding potential barrier. The SHBT structure with a base-collector homojunction shows an Improved cutoff frequency at a high collector current density in comparison with conventional SiGe DHBT, which makes it more promising for high speed, scaled down, field-specific applications.

  2. Two-zone SiGe base heterojunction bipolar charge plasma transistor for next generation analog and RF applications

    Science.gov (United States)

    Bramhane, Lokesh Kumar; Singh, Jawar

    2017-01-01

    For next generation terahertz applications, heterojunction bipolar transistor (HBT) with reduced dimensions and charge plasma (CP) can be a potential candidate due to simplified and inexpensive process. In this paper, a symmetric lateral two-zone SiGe base heterojunction bipolar charge plasma transistor (HBCPT) with an extruded (extended) base is proposed and its performance at circuit level is studied. The linearly graded electric field in the proposed HBCPT provides improved self gain (β) and cut-off frequency (fT). Two-dimensional (2-D) TCAD and small-signal model based simulations of the proposed HBCPT demonstrates high self gain β 35-172.93 and fT of 1-4 THz for different device parameters. Moreover, fT of 1104.9 GHz and β of 35 can be achieved by decreasing Nb up to 8.2 ×1017cm-3 . Although, fT of 2 THz and 4 THz can also be achieved by reducing the base resistance up to 10 Ω and increasing the emitter/collector length up to 63 nm, respectively. The small-signal analysis of common-emitter amplifier based on the proposed HBCPT demonstrate high voltage gain of 50.11 as compared to conventional HBT (18.1).

  3. A low-noise K-Ka band oscillator using AlGaAs/GaAs heterojunction bipolar transistors

    Science.gov (United States)

    Madihian, Mohammad; Takahashi, Hideki

    1991-01-01

    The design considerations, fabrication process, and performance of the first K-Ka-band oscillator implemented using a self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) are described. A large-signal time-domain-based design approach has been used which applies a SPICE-F simulator for optimization of the oscillator circuit parameters for maximum output power. The oscillator employs a 2 x 10 sq mm emitter AlGaAs/GaAs HBT that was fabricated using a pattern inversion technology. The HBT has a base current 1/f noise power density lower than 1 x 10 to the -20th sq A/Hz at 1 kHz and lower than 1 x 10 to the -22nd sq A/Hz at 100 kHz for a collector current of 1 mA. The oscillator, which is composed of only low-Q microstrip transmission lines, has a phase noise of -80 dBc/Hz at 100 kHz off carrier when operated at 26.6 GHz. These results indicate the applicability of the HBTs to low-phase-noise monolithic oscillators at microwave and millimeter-wave frequencies, where both Si bipolar transistors and GaAs FETs are absent.

  4. Advances in organic field-effect transistors and integrated circuits

    Institute of Scientific and Technical Information of China (English)

    WANG Hong; JI ZhuoYu; LIU Ming; SHANG LiWei; LIU Ge; LIU XingHua; LIU Jiang; PENG YingQuan

    2009-01-01

    Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years.In this article we intro-duce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress.Finally, the prospects and problems of OFETs are discussed.

  5. Advances in organic field-effect transistors and integrated circuits

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years. In this article we introduce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress. Finally, the prospects and problems of OFETs are discussed.

  6. Low-power exciton-based heterojunction bipolar transistors for thresholding logic applications

    Science.gov (United States)

    Goswami, Subrata; Bhattacharya, Pallab K.; Singh, Jasprit; Hong, Song-Cheol; Biswas, D.

    1991-03-01

    The principles of an integrated optoelectronic controller-modulator device, based on excitonic transitions and the enhanced Stark effect in quantum wells, are outlined. The device consists of a controller and a modulator as components. The controller is a heterojunction phototransistor with multiquantum wells incorporated in the base-collector depletion region. The amplified output of the controller enables switching of the modulator for low optical power levels. Experimental results on GaAs-AlGaAs based devices, realized by one-step molecular beam epitaxy and selective etching, are presented. The bipolar devices have current gains of about 35-40. The integrating-thresholding properties of the device are demonstrated and switching characteristics for 10 micro-W input to the controller are measured. Cascadability, optoelectronic amplification, and multistage operation are demonstrated in terms of a fan out of eight devices. The integrating-thresholding properties also lend themselves to the implementation of neurons and to the realization of decision making processes. The controller-modulator device can form a versatile basic module for optical computation architectures.

  7. Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

    Science.gov (United States)

    Sun, Ya-Bin; Fu, Jun; Xu, Jun; Wang, Yu-Dong; Zhou, Wei; Zhang, Wei; Cui, Jie; Li, Gao-Qing; Liu, Zhi-Hong

    2014-11-01

    The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV Cl, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in IC was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.

  8. Electro-Thermo-Mechanical Analysis of High-Power Press-Pack Insulated Gate Bipolar Transistors under Various Mechanical Clamping Conditions

    DEFF Research Database (Denmark)

    Hasmasan, Adrian Augustin; Busca, Cristian; Teodorescu, Remus;

    2014-01-01

    production. The reliability of the components has a large impact on the overall cost of a WT, and press-pack (PP) insulated gate bipolar transistors (IGBTs) could be a good solution for future multi-megawatt WTs because of advantages like high power density and reliability. When used in power converters, PP...

  9. Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors

    Science.gov (United States)

    Ritter, D.; Hamm, R. A.; Feygenson, A.; Panish, M. B.

    1992-06-01

    The collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors was found to increase with temperature, and to have a weak electric field dependence. This anomalous behavior has a profound impact on device characteristics.

  10. The Smallest Transistor-Based Nonautonomous Chaotic Circuit

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamasevicius, Arunas

    2005-01-01

    A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

  11. On the 50th Anniversary of the Transistor

    DEFF Research Database (Denmark)

    Stassen, Flemming

    1997-01-01

    This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

  12. First- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors

    Science.gov (United States)

    Nunez-Perez, José Cruz; Lakhdara, Maya; Bouhouche, Manel; Verdier, Jacques; Latreche, Saïda; Gontrand, Christian

    2009-04-01

    We present in this paper an electrical study centred on NPN heterojunction bipolar transistors (HBTs), realized in an industrial BiCMOS SiGe:C process, featuring high attractive performances (ft > 200 GHz) in terms of microwave behaviour and low-frequency noise; reaching this level of performance with good dc characteristics could be however a difficult challenge. Electrical modelling is investigated, using our 2D simulator, based on the drift-diffusion model (DDM). The simulations were very efficient for optimizing the devices. The dc and ac results obtained in this work are efficiently compared with electrical characteristics coming from measurements and SPICE-like parameter extractions, from simulations via a compact model (HICUM) implemented in the so-called commercial simulator ADS (advanced design system). This work was a first step for designing RF circuits like oscillators in a simple way.

  13. SEMICONDUCTOR DEVICES: EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy

    Science.gov (United States)

    Xiaowen, Xi; Changchun, Chai; Xingrong, Ren; Yintang, Yang; Bing, Zhang; Xiao, Hong

    2010-04-01

    The response of a bipolar transistor (BJT) under a square-wave electromagnetic pulse (EMP) with different injecting voltages is investigated. Adopting the curve fitting method, the relationship between the burnout time, the damage energy and the injecting voltage is obtained. Research shows that the damage energy is not a constant value, but changes with the injecting voltage level. By use of the device simulator Medici, the internal behavior of the burned device is analyzed. Simulation results indicate that the variation of the damage energy with injecting voltage is caused by the distribution change of hot spot position under different injection levels. Therefore, the traditional way to evaluate the trade-off between the burnout time and the injecting voltage is not comprehensive due to the variation of the damage energy.

  14. Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse

    Science.gov (United States)

    Xiaowen, Xi; Changchun, Chai; Xingrong, Ren; Yintang, Yang; Zhenyang, Ma; Jing, Wang

    2010-07-01

    A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse (EMP) into the bipolar transistor (BJT) is carried out. Research shows that the increase of the external resistor Rb at base makes the burnout time of the device decrease slightly, the increase of the external voltage source Vbe at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage, and the increase of the external resistor Re can remarkably reduce the voltage drops added to the device and improve the durability of the device. In the final analysis, the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.

  15. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    CHANG,PING-CHIH; LI,N.Y.; BACA,ALBERT G.; MONIER,C.; LAROCHE,J.R.; HOU,H.Q.; REN,F.; PEARTON,S.J.

    2000-08-01

    The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

  16. EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy

    Energy Technology Data Exchange (ETDEWEB)

    Xi Xiaowen; Chai Changchun; Ren Xingrong; Yang Yintang; Zhang Bing; Hong Xiao, E-mail: xixiaowen523103@163.co [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-04-15

    The response of a bipolar transistor (BJT) under a square-wave electromagnetic pulse (EMP) with different injecting voltages is investigated. Adopting the curve fitting method, the relationship between the burnout time, the damage energy and the injecting voltage is obtained. Research shows that the damage energy is not a constant value, but changes with the injecting voltage level. By use of the device simulator Medici, the internal behavior of the burned device is analyzed. Simulation results indicate that the variation of the damage energy with injecting voltage is caused by the distribution change of hot spot position under different injection levels. Therefore, the traditional way to evaluate the trade-off between the burnout time and the injecting voltage is not comprehensive due to the variation of the damage energy. (semiconductor devices)

  17. Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse

    Energy Technology Data Exchange (ETDEWEB)

    Xi Xiaowen; Chai Changchun; Ren Xingrong; Yang Yintang; Ma Zhenyang; Wang Jing, E-mail: xixiaowen523103@163.co [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-07-15

    A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse (EMP) into the bipolar transistor (BJT) is carried out. Research shows that the increase of the external resistor R{sub b} at base makes the burnout time of the device decrease slightly, the increase of the external voltage source V{sub be} at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage, and the increase of the external resistor R{sub e} can remarkably reduce the voltage drops added to the device and improve the durability of the device. In the final analysis, the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.

  18. An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors

    Institute of Scientific and Technical Information of China (English)

    XU Xiao-Bo; ZHANG He-Ming

    2011-01-01

    An analytical expression for avalanche multiplication of a novel vertical SiGe partially depleted heterojunction bipolar transistor (HBT) on a thin silicon-on-insulator (SOI) layer is obtained,considering vertical and horizontal impact ionization effects.The avalanche multiplication is found to be dependent on the collector width and doping concentration,and shows kinks with the increase of reverse base-collector bias,which is quite different from that of a conventional bulk HBT.The model is consistent with the experimental and simulation data and is found to be significant for the design and simulation of 0.13μm millimeter wave SiGe SOI BiCMOS technology.

  19. Modelling, development and optimization of integrated power LDMOS transistor. Performance limits in terms of energy; Modelisation, conception et optimisation de composant de puissance lateral DMOS integre. Etude des limites de performance en energie

    Energy Technology Data Exchange (ETDEWEB)

    Farenc, D.

    1997-12-16

    Technologies for Smart Power Integrated Circuits combine into a single chip Bipolar and CMOS transistors, plus power with lateral or vertical DMOS transistors. Complexity which has been increasing dramatically since the mid-80`s has allowed to integrate, into a single monolithic solution, entire systems. This thesis deals with the modelling, conception and test of the power integrated LDMOS transistor. The power LDMOS transistor is used as a switching device. It is characterized by two parameters which are the Specific On-resistance R{sub sp} and the breakdown voltage BV{sub DSS}. The LDMOS transistor developed for the new Smart Power technology exhibits a Specific On-resistance of 200 m{Omega}{sup *}mm{sup 2} and a breakdown voltage of 60 V. This device is dedicated to automotive applications. A reduction of the power device which is achieved with a low Specific On-resistance puts forward new issues such as the maximum Energy capability. When the power device is switched-off on an inductive load, a certain amount of energy is dissipated; if it is beyond a certain limit, the device is destroyed. Our goal is to determine the energy limits which are associated with our new Power integrated LDMOS transistor. (author) 28 refs.

  20. Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures

    Directory of Open Access Journals (Sweden)

    V.N. Murashev

    2015-03-01

    Full Text Available In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS in pixels photodetector arrays is discussed. Variants of new technical solutions based on photo-detectors matrix pixel BI-FIS structures are shown. Their effectiveness and scope are evaluated.

  1. Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions

    Science.gov (United States)

    Liu, Chaoming; Li, Xingji; Yang, Jianqun; Bollmann, Joachim

    2014-01-01

    Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. The results show that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) keeps invariably. The current gain varies slightly, when the annealing temperature (TA) is lower than 500 K, while varies rapidly at TA>550 K, and the current gain of the 3CG130 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. The deep level transient spectroscopy (DLTS) data was used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(+/0) trap is the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V2(+/0) peak has many characteristics expected for the current gain degradation.

  2. Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chaoming [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Xingji, E-mail: lxj0218@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yang, Jianqun [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bollmann, Joachim [Institute of Electronics and Sensor Materials, TU Bergakademie, Freiberg 71691 (Germany)

    2014-01-21

    Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. The results show that the base current (I{sub B}) decreases with the increasing annealing temperature, while the collector current (I{sub C}) keeps invariably. The current gain varies slightly, when the annealing temperature (T{sub A}) is lower than 500 K, while varies rapidly at T{sub A}>550 K, and the current gain of the 3CG130 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. The deep level transient spectroscopy (DLTS) data was used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V{sub 2}(+/0) trap is the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V{sub 2}(+/0) peak has many characteristics expected for the current gain degradation.

  3. DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

    Science.gov (United States)

    Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

    2007-01-01

    Commercial npn transistor (2N 2219A) irradiated with 50 MeV Li 3+-ions with fluences ranging from 3.1 × 10 13 ions cm -2 to 12.5 × 10 13 ions cm -2, is studied for radiation induced gain degradation and minority carrier trap levels or recombination centers. The properties such as activation energy, trap concentration and capture cross section of induced deep levels are studied by deep level transient spectroscopy (DLTS) technique. Minority carrier trap levels with energies ranging from 0.237 eV to 0.591 eV were observed in the base-collector junction of the transistor. In situ I- V measurements were made to study the gain degradation as a function of ion fluence. Ion induced energy levels result in increase in the base current through Shockley Read Hall (SRH) or multi-phonon recombination and subsequent transistor gain degradation.

  4. Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology

    OpenAIRE

    Bertrand, Géraldine; Delage, Christelle; Bafleur, Marise; Nolhier, Nicolas; Dorkel, Jean-Marie; Nguyen, Quang; Mauran, Nicolas; Trémouilles, David; Perdu, Philippe

    2001-01-01

    9 pages; International audience; A thorough analysis of the physical mechanisms involved in a Vertical Grounded-Base NPN bipolar transistor (VGBNPN) under ElectroStatic Discharge (ESD) stress is first carried out by using 2D-device simulation, Transmission Line Pulse measurement (TLP) and photoemission experiments. This analysis is used to account for the unexpected low value of the VGBNPN snapback holding voltage under TLP stress. A compact model based on a new avalanche formulation resultin...

  5. Radiation and annealing effects on integrated bipolar Operational Amplifier

    Science.gov (United States)

    Assaf, J.

    2017-02-01

    Integrated bipolar Operational Amplifier (op-amp) type μA 741 was irradiated with neutrons and gamma rays. The radiation on gain factors, slew rate, and power supply current have been evaluated. The experimental results show a decrease of these parameter values after exposing to the radiation. The advantage of the increase of the voltage power supplies and the thermal annealing treatment on the damaged parameters was also explored. The relationship among different frequency response parameters is also studied leading to an analytical formula for the above degraded parameters.

  6. Nondestructive characterization of RBSOA of high-power bipolar transistors. [Reverse-bias safe operating area

    Science.gov (United States)

    Jovanovic, M. M.; Lee, F. C.; Chen, D. Y.

    1986-01-01

    Reverse-bias safe operating area (RBSOA) of high-power Darlington transistors is characterized using a 120 A/1000 V nondestructive reverse-bias second breakdown tester designed and fabricated at Virginia Polytechnic Institute and State University. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.

  7. DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

    Energy Technology Data Exchange (ETDEWEB)

    Madhu, K.V. [Department of Physics, Jnanabharati, Bangalore University, Bangalore 560 056, Karnataka (India); Kulkarni, S.R. [Department of Physics, Center for PG Studies, SBMJC, Jayanagar, Bangalore 560 011, Karnataka (India); Ravindra, M. [Components Division, ICG, ISRO Satellite Centre, Airport Road, Bangalore 560 017, Karnataka (India); Damle, R. [Department of Physics, Jnanabharati, Bangalore University, Bangalore 560 056, Karnataka (India)]. E-mail: damleraju@yahoo.com

    2007-01-15

    Commercial npn transistor (2N 2219A) irradiated with 50 MeV Li{sup 3+}-ions with fluences ranging from 3.1 x 10{sup 13} ions cm{sup -2} to 12.5 x 10{sup 13} ions cm{sup -2}, is studied for radiation induced gain degradation and minority carrier trap levels or recombination centers. The properties such as activation energy, trap concentration and capture cross section of induced deep levels are studied by deep level transient spectroscopy (DLTS) technique. Minority carrier trap levels with energies ranging from 0.237 eV to 0.591 eV were observed in the base-collector junction of the transistor. In situ I-V measurements were made to study the gain degradation as a function of ion fluence. Ion induced energy levels result in increase in the base current through Shockley Read Hall (SRH) or multi-phonon recombination and subsequent transistor gain degradation.

  8. A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

    Institute of Scientific and Technical Information of China (English)

    Sun Ya-Bin; Fu Jun; Xu Jun; Wang Yu-Dong; Zhou Wei; Zhang Wei; Cui Jie

    2013-01-01

    A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work.The impacts of laser energy and collector load resistance on the SET are investigated in detail.The waveform,amplitude,and width of the SET pulse as well as collected charge are used to characterize the SET response.The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT.Furthermore,the underlying physical mechanisms are analyzed and investigated,and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased.Besides,it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

  9. Improvement of switching speed of a 600-V nonpunch through insulated gate bipolar transistor using fast neutron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Ha Ni; Sun, Gwang Min; Kim, Ji Suck; Hoang, Sy Minh Tuan; Jin, Mi Eun; Ahn, Sung Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2017-02-15

    Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 10{sup 8} n/cm{sup 2}, 1 × 10{sup 9} n/cm{sup 2}, 1 × 10{sup 10} n/cm{sup 2}, and 1 × 10{sup 11} n/cm{sup 2}. Electrical characteristics such as current–voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

  10. Printed organic thin-film transistor-based integrated circuits

    Science.gov (United States)

    Mandal, Saumen; Noh, Yong-Young

    2015-06-01

    Organic electronics is moving ahead on its journey towards reality. However, this technology will only be possible when it is able to meet specific criteria including flexibility, transparency, disposability and low cost. Printing is one of the conventional techniques to deposit thin films from solution-based ink. It is used worldwide for visual modes of information, and it is now poised to enter into the manufacturing processes of various consumer electronics. The continuous progress made in the field of functional organic semiconductors has achieved high solubility in common solvents as well as high charge carrier mobility, which offers ample opportunity for organic-based printed integrated circuits. In this paper, we present a comprehensive review of all-printed organic thin-film transistor-based integrated circuits, mainly ring oscillators. First, the necessity of all-printed organic integrated circuits is discussed; we consider how the gap between printed electronics and real applications can be bridged. Next, various materials for printed organic integrated circuits are discussed. The features of these circuits and their suitability for electronics using different printing and coating techniques follow. Interconnection technology is equally important to make this product industrially viable; much attention in this review is placed here. For high-frequency operation, channel length should be sufficiently small; this could be achievable with a combination of surface treatment-assisted printing or laser writing. Registration is also an important issue related to printing; the printed gate should be perfectly aligned with the source and drain to minimize parasitic capacitances. All-printed organic inverters and ring oscillators are discussed here, along with their importance. Finally, future applications of all-printed organic integrated circuits are highlighted.

  11. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

    Science.gov (United States)

    Martí, A; Luque, A

    2015-04-22

    Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

  12. Enhanced performance in graphene RF transistors via advanced process integration

    Science.gov (United States)

    Hong, Seul Ki; Oh, Joong Gun; Hwang, Wan Sik; Cho, Byung Jin

    2017-04-01

    The state-of-the-art performance of a graphene radio-frequency (RF) field-effect transistor (FET) made of chemical vapor deposition (CVD) graphene is presented. The record high cut-off frequency as high as 380 GHz using CVD graphene was attributed to the implementation of advanced process integration. On the one hand, interface engineering has become critical in two-dimensional (2D) electronics since the charge transport of a 2D electron system like graphene is highly affected by the interface. The interface engineering was made for both the top and bottom of the graphene surface by implementing a non-polar material (1, 3, 5-trimethyl-1, 3, 5-trivinyl cyclotrisiloxane). In contrast to conventional polar materials, such as SiO2, the non-polar materials significantly reduce the surface optical phonon scattering in the graphene channel, leading to the enhanced RF performance of graphene FET. On the other hand, micro-scaled holes over the multilayer graphene and self-aligned structure also become a critical factor in minimizing the parasitic resistance that is inversely proportional to RF performance. As the growth technique of CVD graphene greatly advances, the advanced process integration scheme could bring graphene electronics one step further towards practical application.

  13. Integrated electrochemical transistor as a fast recoverable gas sensor.

    Science.gov (United States)

    Lange, Ulrich; Mirsky, Vladimir M

    2011-02-14

    A new design of conductometric chemical sensors based on conducting polymers as chemosensitive elements was suggested. The sensor includes six electrodes. Four inner electrodes coated by chemosensitive polymer are used for simultaneous two- and four-point resistance measurements thus providing information on the bulk polymer resistance and on the resistance of the polymer/electrode contacts. Two outer electrodes wired to inner electrodes by polymeric electrolyte are used for electrical control of redox state of the chemosensitive polymer. The outer electrodes are connected to potentiostat as reference and counter electrodes. It allows us to control redox state of the inner (working) electrodes. This new measurement configuration, resembling chemosensitive electrochemical transistors, provides an internal test of the sensor integrity and an electrically driven sensor regeneration. It was tested as a sensor for the detection of nitrogen dioxide. Polythiophene or polyaniline was used as receptors. Cyclic voltammograms of these polymers on the sensor surface measured in air atmosphere were very similar to that measured in aqueous electrolyte. A control of conductivity of these chemosensitive polymers by electrical potential applied vs. incorporated reference electrode was demonstrated. This effect was used for the regeneration of the chemosensitive material after exposure to nitrogen dioxide: in comparison to usual chemiresistors displaying an irreversible behavior in such test even in the time scale of hours, a completely reversible sensor regeneration within few minutes was observed.

  14. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Science.gov (United States)

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  15. Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events

    Science.gov (United States)

    Gendron, A.; Renaud, P.; Bafleur, M.; Nolhier, N.

    2008-05-01

    This paper proposes a 1D-analytical description of the injection ratio of a self-biased bipolar transistor under very high current injection conditions. Starting from an expression of the current gain based on the stored charge into the emitter and base regions, we derive a new analytical expression of the current injection ratio. This analytical description demonstrates the presence of an asymptotic limit for the injection ratio at very high current densities, as the ratio of electron/hole mobilities in the case of an NPN transistor and to the ratio of hole/electron saturation velocities for a PNP. Moreover, for the first time, a base narrowing effect is demonstrated and explained in the case of a self-biased PNP, in contrast with the base widening effect (Kirk effect [Kirk CT, A theory of transistor cutoff frequency (fT) falloff at high current densities, IRE Trans Electr Dev 1961: p. 164-73]) reported for lower current density. These results are validated by numerical simulation and show a good agreement with experimental characterizations of transistors especially designed to operate under extreme condition such as electrostatic discharge (ESD) events.

  16. I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

    Science.gov (United States)

    Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

    A commercial bipolar junction transistor (2N 2219A, npn) irradiated with 84 MeV O6+-ions with fluence of the order of 1013 ions cm-2 is studied for radiation-induced gain degradation and deep-level defects or recombination centers. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep-level transient spectroscopy. Minority carrier trap energy levels with energies ranging from EC -0.17 eV to EC -0.55 eV are observed in the base-collector junction of the transistor. Majority carrier defect levels are also observed with energies ranging from EV +0.26 eV to EV +0.44 eV. The irradiated device is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for an increase in base current through Shockley-Read-Hall or multi-phonon recombination and consequent transistor gain degradation.

  17. A Base-Emitter Self-Aligned Multi-Finger Si1-xGex/Si Power Heterojunction Bipolar Transistor

    Institute of Scientific and Technical Information of China (English)

    XUE Chun-Lai; YAO Fei; SHI Wen-Hua; CHENG Bu-Wen; WANG Hong-Jie; YU Jin-Zhong; WANG Qi-Ming

    2007-01-01

    With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-finger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880μm2) is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 1017 cm-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0dBm to 21 dBm.A maximum output power of 29.9dBm (about 977mW) is obtained at an input power of 18.5dBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.

  18. Effect of Si interface surface roughness to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor

    Energy Technology Data Exchange (ETDEWEB)

    Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru [Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Nandiyanto, Asep Bayu Dani [Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Murakami, Hideki [Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Khairrurijal [Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)

    2016-02-08

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  19. Role of hot electron base transport in abrupt emitter InP/Ga0.43In0.53As heterojunction bipolar transistors

    Science.gov (United States)

    Ritter, Dan; Hamm, R. A.; Feygenson, A.; Smith, P. R.

    1994-05-01

    The high frequency performance of InP/Ga0.47In0.53As heterojunction bipolar transistors (HBTs) with a varying base thickness was measured. The diffusion constant of minority carrier electrons in the heavily doped base was found to be 105 cm2/s. It is demonstrated that the short base transit times in fast InP/Ga0.47In0.53As HBTs is mainly due to the high value of the diffusion constant of thermalized electrons. The contribution of hot electron ballistic transport is relatively small.

  20. Hinged Polysilicon Structures with Integrated CMOS Thin Film Transistors

    Science.gov (United States)

    Pister, Kristofer Stefan Josef

    Micro electromechanical systems (MEMS) have the potential to have a profound impact on both scientific research and commercial products. MEMS have proven to be a commercial success, finding application in such diverse environments as hospital operating rooms and automobile engines. One of the open research problems in MEMS is the fabrication of three dimensional structures using what is essentially a planar process. Several methods exist for making large vertical steps in silicon, but they offer only specific geometries and have limited resolution. The process described here is based on polysilicon surface micromachining, with the addition that micro hinges are built along with other structures. In this approach, polycrystalline silicon structural elements are fabricated in the plane of the wafer, and then rotated out of the plane of the wafer using hinged joints. Individual elements are then assembled together to form more complicated three dimensional structures with high detail in all dimensions. The assembly process has been automated to some degree by the inclusion of spring loaded locks which snap into place once a hinge has reached a critical angle. With these hinged structures and spring locks, thousands of structures can be rotated and locked into place simultaneously in the final step of fabrication. Several examples of hinged three dimensional structures are presented, including a hot wire anemometer, a frog-embryo dynamometer, and a parallel jaw gripper, all of which fit inside a 1 millimeter cube. In addition to the structural elements provided in the process, several electronic elements have been integrated as well. These elements include CMOS thin film transistors integrated directly in the polysilicon structural thin film, piezoresistive strain sensors for measuring force and deflection, and flexible micro ribbon cable which allows electrical wiring to be run between the substrate and the rotated structures.

  1. CMOS-based carbon nanotube pass-transistor logic integrated circuits.

    Science.gov (United States)

    Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

    2012-02-14

    Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.

  2. Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

    Directory of Open Access Journals (Sweden)

    Agnes Nagy

    2011-01-01

    Full Text Available The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n, physical explanation and simulation procedure, as well as a new extraction method for the diffusion potential VDE(T, based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

  3. Temas de Física para Ingeniería: El transistor de unión

    OpenAIRE

    Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito

    1990-01-01

    El transistor de unión bipolar. Tensiones y corrientes en el transistor. El transistor como amplificador. El transistor como conmutador. Transistores unipolares o de efecto de campo. El tiristor. Microelectrónica y circuitos integrados.

  4. Temas de Física para Ingeniería: El transistor de unión

    OpenAIRE

    Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito

    1990-01-01

    El transistor de unión bipolar. Tensiones y corrientes en el transistor. El transistor como amplificador. El transistor como conmutador. Transistores unipolares o de efecto de campo. El tiristor. Microelectrónica y circuitos integrados.

  5. Logic gates based on ion transistors.

    Science.gov (United States)

    Tybrandt, Klas; Forchheimer, Robert; Berggren, Magnus

    2012-05-29

    Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated circuits based on ion transistors would be one approach to route and dispense complex chemical signal patterns to achieve such control. To date several types of ion transistors have been reported; however, only individual devices have so far been presented and most of them are not functional at physiological salt concentrations. Here we report integrated chemical logic gates based on ion bipolar junction transistors. Inverters and NAND gates of both npn type and complementary type are demonstrated. We find that complementary ion gates have higher gain and lower power consumption, as compared with the single transistor-type gates, which imitates the advantages of complementary logics found in conventional electronics. Ion inverters and NAND gates lay the groundwork for further development of solid-state chemical delivery circuits.

  6. Bipolar one diode-one resistor integration for high-density resistive memory applications.

    Science.gov (United States)

    Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming

    2013-06-07

    Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.

  7. Organic thin film transistor integration a hybrid approach

    CERN Document Server

    Li, Flora; Wu, Yiliang; Ong, Beng S

    2013-01-01

    Research on organic electronics (or plastic electronics) is driven by the need to create systems that are lightweight, unbreakable, and mechanically flexible. With the remarkable improvement in the performance of organic semiconductor materials during the past few decades, organic electronics appeal to innovative, practical, and broad-impact applications requiring large-area coverage, mechanical flexibility, low-temperature processing, and low cost. Thus, organic electronics appeal to a broad range of electronic devices and products including transistors, diodes, sensors, solar cells, lighting

  8. Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

    Science.gov (United States)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2013-01-01

    A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

  9. Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

    Science.gov (United States)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2013-01-01

    A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

  10. Analytical base-collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Ma Jian-Li; Xu Li-Jun

    2011-01-01

    The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collectorbase bias-and shows a kink as the reverse collector-base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.

  11. Effects of base doping and carrier lifetime on differential current gain and temperature coefficient of 4H-SiC power bipolar junction transistors

    Science.gov (United States)

    Niu, X.; Fardi, H.

    2012-04-01

    4H-SiC NPN bipolar junction transistor (BJT) is studied systematically by performing two-dimensional numerical simulations. Several design issues are discussed. Depending on the doping concentration of the base and the carrier lifetimes, both positive and negative temperature coefficients in the common emitter current gain could exist in 4H-SiC NPN BJTs with aluminium-doped base. The temperature coefficients of the current gain at different base doping concentrations and different carrier lifetimes have been determined. A high base doping concentration can reduce the requirement for the carrier lifetime in order to obtain negative temperature coefficient in current gain. Device simulations are performed to evaluate the carrier lifetimes by fitting the measured output IC -VCE curves. An excellent fitting is obtained and the base electron lifetime and the emitter hole lifetime are extracted to be about 22 and 5.7 ns, respectively.

  12. Self-Aligned InP/InGaAs Single Heterojunction Bipolar Transistor with Novel Micro-airbridge Structure and Quasi-coplanar Contacts

    Institute of Scientific and Technical Information of China (English)

    李献杰; 蔡道民; 曾庆明; 刘式墉; 梁春广

    2003-01-01

    The fabrication and performance of a self-aligned InP/InGaAs single heterojunction bipolar transistor (SHBT)with a novel micro-airbridge structure and co-planar-contacts are described. The reported structure is based on anisotropy wet, etching of InP and selective wet, etching between InP and InGaAs. The device with a 1.5 × 5 μm2emitter demonstrates a current gain of 30 at collector current Ic = 10 mA and extrapolates the current-gain cutoff frequency Ft of 53 GHz and the maximum oscillation frequency Fmax of 72 GHz. Compared with the one using the conventional structure, the maximum oscillation frequency of the device with micro-airbridge is dramatically improved from 45 GHz to 72 GHz. This result reveals that the extrinsic capacitance of small size SHBT can be greatly reduced.

  13. Aluminum heat sink enables power transistors to be mounted integrally with printed circuit board

    Science.gov (United States)

    Seaward, R. C.

    1967-01-01

    Power transistor is provided with an integral flat plate aluminum heat sink which mounts directly on a printed circuit board containing associated circuitry. Standoff spacers are used to attach the heat sink to the printed circuit board containing the remainder of the circuitry.

  14. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    KAUST Repository

    Hanna, A. N.

    2013-11-26

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  15. Bipolar integrated circuits in SiC for extreme environment operation

    Science.gov (United States)

    Zetterling, Carl-Mikael; Hallén, Anders; Hedayati, Raheleh; Kargarrazi, Saleh; Lanni, Luigia; Malm, B. Gunnar; Mardani, Shabnam; Norström, Hans; Rusu, Ana; Saveda Suvanam, Sethu; Tian, Ye; Östling, Mikael

    2017-03-01

    Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

  16. Design and characterization of integrated front-end transistors in a micro-strip detector technology

    CERN Document Server

    Simi, G; Batignani, G; Bettarini, S; Bondioli, M; Boscardin, M; Bosisio, L; Dalla Betta, Gian Franco; Dittongo, S; Forti, F; Giorgi, M; Gregori, P; Manghisoni, M; Morganti, M; Ratti, L; Re, V; Rizzo, G; Speziali, V; Zorzi, N

    2002-01-01

    We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures.

  17. OPEN-LOOP CONTROL OF A BIPOLAR STEPPER MOTORS USING THE SPECIALIZED INTEGRATED CIRCUITS

    Directory of Open Access Journals (Sweden)

    Gheorghe BALUTA

    2004-12-01

    Full Text Available This paper describes the open-loop control of a stepper motors. Bipolar stepper motors can be driven with an L297, an L298N bridge driver and very few external components. With an L298N this configuration drives motors with winding currents up to 2.5A. If very high powers are required an equivalent circuit made with discrete transistors replaces the bridge driver. Together these two chips form a complete microprocessor-to-stepper motor interface. The command signals for the controller L297 are generated through an IBM-PC486 interface. It was developed an open-loop command program written in BorlandC programming language.

  18. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  19. Organic Transistor Arrays Integrated with Finger-Powered Microfluidics for Multianalyte Saliva Testing.

    Science.gov (United States)

    Pappa, Anna-Maria; Curto, Vincenzo F; Braendlein, Marcel; Strakosas, Xenofon; Donahue, Mary J; Fiocchi, Michel; Malliaras, George G; Owens, Roisin M

    2016-09-01

    A compact multianalyte biosensing platform is reported, composed of an organic electrochemical transistor (OECT) microarray integrated with a pumpless "finger-powered" microfluidic, for quantitative screening of glucose, lactate, and cholesterol levels. A biofunctionalization method is designed, which provides selectivity towards specific metabolites as well as minimization of any background interference. In addition, a simple method is developed to facilitate multi-analyte sensing and avoid electrical crosstalk between the different transistors by electrically isolating the individual devices. The resulting biosensing platform, verified using human samples, offers the possibility to be used in easy-to-obtain biofluids with low abundance metabolites, such as saliva. Based on our proposed method, other types of enzymatic biosensors can be integrated into the array to achieve multiplexed, noninvasive, personalized point-of-care diagnostics.

  20. Fully-integrated, bezel-less transistor arrays using reversibly foldable interconnects and stretchable origami substrates

    Science.gov (United States)

    Kim, Mijung; Park, Jihun; Ji, Sangyoon; Shin, Sung-Ho; Kim, So-Yun; Kim, Young-Cheon; Kim, Ju-Young; Park, Jang-Ung

    2016-05-01

    Here we demonstrate fully-integrated, bezel-less transistor arrays using stretchable origami substrates and foldable conducting interconnects. Reversible folding of these arrays is enabled by origami substrates which are composed of rigid support fixtures and foldable elastic joints. In addition, hybrid structures of thin metal films and metallic nanowires worked as foldable interconnects which are located on the elastomeric joints.Here we demonstrate fully-integrated, bezel-less transistor arrays using stretchable origami substrates and foldable conducting interconnects. Reversible folding of these arrays is enabled by origami substrates which are composed of rigid support fixtures and foldable elastic joints. In addition, hybrid structures of thin metal films and metallic nanowires worked as foldable interconnects which are located on the elastomeric joints. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02041k

  1. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  2. 4H-SiC npn双极型晶体管的研制%Study of 4H-SiC npn Bipolar Junction Transistor

    Institute of Scientific and Technical Information of China (English)

    田爱华; 潘宏菽; 赵彤; 王于辉; 陈昊

    2012-01-01

    The characteristics of 4H-SiC npn bipolar junction transistor were realized on the homemade 4H-SiC epitaxy material and own technology of SiC bipolar junction transistor. In order to avoid high temperature p+ ion implantation or overgrowth, n+/p+/p/n~ epitaxy was used, which is etched to form double-mesa-structure. For good p-base contact, p+ layer was inserted between the n+ and p layer, which debased the emitter efficiency and the current gain at the same time. In order to increase the breakdown voltage of device, sacrifice oxygenation was used, which can reduce the etch damage and avoid electric field focus, and SiO2 formed by oxygenation of SiC supply device passiwation, too. Based on aforementioned, 4H-SiC npn bipolar junction transistor is realized with a Bvcbo of 200 V and a current gain of 3, and the leakage current is lower than 0. 05 mA at BVQba of 100 V.%采用国产的4H-SiC外延材料和自行开发的SiC双极晶体管的工艺技术,实现了4H-SiC npn双极晶体管特性.为避免二次外延或高温离子p+注入等操作,外延形成n+/p+/p/n -结构材料,然后根据版图设计进行相应的刻蚀,形成双台面结构.为保证p型基区能实现良好的欧姆接触,外延时在n+层和p层中间插入适当高掺杂的p+层外延,但也使双极晶体管发射效率降低,电流放大系数降低.为提高器件的击穿电压,在尽量实现低损伤刻蚀时,采用牺牲氧化等技术减少表面损伤及粗糙度,避免表面态及尖端电场集中,并利用SiC能形成稳定氧化层的优势来形成钝化保护.器件的集电结反向击穿电压达200 V,集电结在100 V下的反向截止漏电流小于0.05 mA,共发射极电流放大系数约为3.

  3. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    with nanowire sensors functionalized using different modification schemes. To facilitate functionalization and measurement and as a first step towards integration into a point-of-care device, several microfluidic tools were developed for sample delivery to the sensor surface and as a modular platform......This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  4. High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks

    Science.gov (United States)

    Kim, Jae-Hoon; Lin, Steven H.

    1991-01-01

    High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.

  5. 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith, Roger; Ferrier, Terry; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

  6. Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain

    Energy Technology Data Exchange (ETDEWEB)

    Bablich, A., E-mail: andreas.bablich@uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Merfort, C., E-mail: merfort@imt.e-technik.uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Eliasz, J., E-mail: jacek.eliasz@student.uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Schäfer-Eberwein, H., E-mail: heiko.schaefer@uni-siegen.de [Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Haring-Bolivar, P., E-mail: peter.haring@uni-siegen.de [Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Boehm, M., E-mail: markus.boehm@uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany)

    2014-05-02

    In this paper, the design, fabrication and characterization of an amorphous silicon germanium carbide (a-SiGeC:H) photo sensitive bipolar junction transistor (PS-BJT) with three terminals are presented. Whereas the current gain of similar transistor devices presented in the past (Wu et al., 1984; Hwang et al., 1993; Nascetti and Caputo, 2002; Chang et al., 1985a,b; Wu et al, 1985; Hong et al., 1990) can only be controlled with photo induced charge generation, the n–i–δp–i–n structure developed features a contacted base to provide the opportunity to adjust the current gain optically and electrically, too. Electron microscope-, current-/voltage- and spectral measurements were performed to study the PS-BJT behavior and calculate the electrical and optical current gain. The spectral response maximum of the base–collector diode has a value of 170 mA/W applying a base–collector voltage of − 1 V and is located at 620 nm. The base–emitter diode reaches a sensitivity of 25.7 mA/W at 530 nm with a base-emitter voltage of − 3 V. The good a-Si:H transport properties are validated in a μτ-product of 4.6 × 10{sup −6} cm{sup 2} V s, which is sufficient to reach a continuous base- and photo-tunable current gain of up to − 126 at a base current of I{sub B} = + 10 nA and a collector–emitter voltage of V{sub CE} = − 3 V. The transistor obtains a maximum collector current of − 65.5 μA (V{sub CE} = − 3 V) and + 56.2 μA (V{sub CE} = + 3 V) at 10,000 lx 5300 K white-light illumination. At 3300 lx, the electrical current gain reaches a value of + 100 (V{sub CE} = + 2 V) at I{sub B} = 10 nA. With a negative base current of I{sub B} = − 10 nA the electrical gain can be adjusted between 87 (V{sub CE} = + 2 V) and − 106 (V{sub CE} = -3 V), respectively. When no base charge is applied, the transistor is “off” for V{sub CE} > − 3 V. Reducing the base current increases the electrical current gain. Operating with a voltage V{sub CE} of just ± 2 V

  7. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  8. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

    Institute of Scientific and Technical Information of China (English)

    XU Cheng; CHEN Bomy; LIU Bo; CHEN Yi-Feng; LIANG Shuang; SONG Zhi-Tang; FENG Song-Lin; WAN Xu-Dong; YANG Zuo-Ya; XIE Joseph

    2008-01-01

    A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0.18 μm complementary metal-oxide semiconductor process technology.It shows steady switching characteristics in the dc current-voltage measurement.The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained.These results show the feasibility of integrating phase change memory cell with MOSFET.

  9. Field-emission-induced electromigration method for the integration of single-electron transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ueno, Shunsuke; Tomoda, Yusuke; Kume, Watari; Hanada, Michinobu; Takiya, Kazutoshi [Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588 (Japan); Shirakashi, Jun-ichi, E-mail: shrakash@cc.tuat.ac.jp [Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588 (Japan)

    2012-01-01

    We report a simple and easy method for the integration of planar-type single-electron transistors (SETs). This method is based on electromigration induced by a field emission current, which is so-called 'activation'. The integration of two SETs was achieved by performing the activation to the series-connected initial nanogaps. In both simultaneously activated devices, current-voltage (I{sub D}-V{sub D}) curves displayed Coulomb blockade properties, and Coulomb blockade voltage was also obviously modulated by the gate voltage at 16 K. Moreover, the charging energy of both SETs was well controlled by the preset current in the activation.

  10. Radiation effects on silicon bipolar transistors caused by 3-10 MeV protons and 20-60 MeV bromine ions

    Science.gov (United States)

    Li, Xingji; Geng, Hongbin; Lan, Mujie; Liu, Chaoming; Yang, Dezhuang; He, Shiyu

    2010-03-01

    The current gain degradation in silicon NPN bipolar junction transistors (BJTs) was examined under irradiation with 3-10 MeV protons and 20-60 MeV bromine (Br) ions with various dose levels. To characterize the radiation damage of the NPN BJTs, the ionizing dose D i and displacement dose D d as a function of chip depth in the NPN BJTs were calculated for both the protons and Br ions with different energies. Based on the irradiation testing and calculated results, it is shown that the current gain degradation of NPN BJTs is sensitive to the ratio of D d/( D d+ D i) in the sensitive region given by protons and Br ions. The irradiation particles (protons and Br ions), which give larger D d/( D d+ D i) at a given total dose, would generate more severe damage to the NPN BJTs. The reciprocal of the gain variation as a function of the displacement dose was compared, showing that the Messenger-Spratt equation becomes relevant to describe the experimental data, when the ratio of the D d/( D d+ D i) are larger and the displacement dose are higher than a certain value.

  11. A study of the effects of the base doping profile on SiGe heterojunction bipolar transistor performance for all levels of injection

    Science.gov (United States)

    Khanduri, Gagan; Panwar, Brishbhan

    2006-04-01

    The effects of two different base doping profiles on the current gain and cut-off frequency for all levels of current injection have been studied for NPN Si/SiGe/Si double heterojunction bipolar transistors (SiGe DHBTs). The two-dimensional simulation results for a SiGe DHBT with uniform base doping and a fixed base Gummel number are compared with a non-uniform base doping profile SiGe drift-DHBT device. The study explains the performance of SiGe HBTs at different injection levels by analysing the electron and hole mobility, drift velocity, electric field, junction capacitances and intrinsic and extrinsic base region conductivities. The base doping profile in the SiGe drift-DHBT is controlled in such a way that it creates a net accelerating drift field in the quasi-neutral base for minority electrons. This accelerating field subsequently improves the current gain and cut-off frequency for the SiGe drift-DHBT in comparison with the SiGe DHBT for all levels of injection.

  12. Vertical Hole Transport and Carrier Localization in InAs /InAs1 -xSbx Type-II Superlattice Heterojunction Bipolar Transistors

    Science.gov (United States)

    Olson, B. V.; Klem, J. F.; Kadlec, E. A.; Kim, J. K.; Goldflam, M. D.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.; Flatté, M. E.

    2017-02-01

    Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-band-gap InAs /InAs1 -xSbx type-II superlattices (T2SLs). Vertical hole mobilities (μh) are reported and found to decrease rapidly from 360 cm2/V s at 120 K to approximately 2 cm2/V s at 30 K, providing evidence that holes are confined to localized states near the T2SL valence-miniband edge at low temperatures. Four distinct transport regimes are identified: (1) pure miniband transport, (2) miniband transport degraded by temporary capture of holes in localized states, (3) hopping transport between localized states in a mobility edge, and (4) hopping transport through defect states near the T2SL valence-miniband edge. Region (2) is found to have a thermal activation energy of ɛ2=36 meV corresponding to the energy range of a mobility edge. Region (3) is found to have a thermal activation energy of ɛ3=16 meV corresponding to the hopping transport activation energy. This description of vertical hole transport is analogous to electronic transport observed in disordered amorphous semiconductors displaying Anderson localization. For the T2SL, we postulate that localized states are created by disorder in the group-V alloy of the InAs1 -xSbx hole well causing fluctuations in the T2SL valence-band energy.

  13. Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

    Science.gov (United States)

    Green, M. L.; Weir, B. E.; Brasen, D.; Hsieh, Y. F.; Higashi, G.; Feygenson, A.; Feldman, L. C.; Headrick, R. L.

    1991-01-01

    Traditional techniques for growing Si-Ge layers have centered around low-temperature growth methods such as molecular-beam epitaxy and ultrahigh vacuum chemical vapor deposition in order to achieve strain metastability and good growth control. Recognizing that metastable films are probably undesirable in state-of-the-art devices on the basis of reliability considerations, and that in general, crystal perfection increases with increasing deposition temperatures, we have grown mechanically stable Si-Ge films (i.e., films whose composition and thickness places them on or below the Matthews-Blakeslee mechanical equilibrium curve) at 900 °C by rapid thermal chemical vapor deposition. Although this limits the thickness and the Ge composition range, such films are exactly those required for high-speed heterojunction bipolar transistors and Si/Si-Ge superlattices, for example. The 900 °C films contain three orders of magnitude less oxygen than their limited reaction processing counterparts grown at 625 °C. The films are thermally stable as well, and do not interdiffuse more than about 20 Å after 950 °C for 20 min. Therefore, they can be processed with standard Si techniques. At 900 °C, the films exhibit growth rates of about 15-20 Å/s. We have also demonstrated the growth of graded layers of Si-Ge, and have determined that a strain gradient exists in these layers.

  14. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  15. Development of an Integrated Psychosocial Treatment to Address the Medical Burden Associated with Bipolar Disorder

    OpenAIRE

    Sylvia, Louisa G; Nierenberg, Andrew A.; Stange, Jonathan P.; Peckham, Andrew D.; Deckersbach, Thilo

    2011-01-01

    We developed an integrated psychosocial treatment for bipolar disorder to decrease the disproportionate medical burden associated with this illness. Three treatment modules, Nutrition/weight loss, Exercise, and Wellness Treatment (NEW Tx) were administered in twelve 60-minute group sessions over 14 weeks. After the first group (N = 4) had completed the treatment, it was revised, and then a second group (N = 6) completed the revised treatment. Participants completed all of the study assessment...

  16. Transcap: A new integrated hybrid supercapacitor and electrolyte-gated transistor device (Presentation Recording)

    Science.gov (United States)

    Santato, Clara

    2015-10-01

    The boom in multifunctional, flexible, and portable electronics and the increasing need of low-energy cost and autonomy for applications ranging from wireless sensor networks for smart environments to biomedical applications are triggering research efforts towards the development of self-powered sustainable electronic devices. Within this context, the coupling of electronic devices (e.g. sensors, transistors) with small size energy storage systems (e.g. micro-batteries or micro-supercapacitors) is actively pursued. Micro-electrochemical supercapacitors are attracting much attention in electronics for their capability of delivering short power pulses with high stability over repeated charge/discharge cycling. For their high specific pseudocapacitance, electronically conducting polymers are well known as positive materials for hybrid supercapacitors featuring high surface carbon negative electrodes. The processability of both polymer and carbon is of great relevance for the development of flexible miniaturised devices. Electronically conducting polymers are even well known to feature an electronic conductivity that depends on their oxidation (p-doped state) and that it is modulated by the polymer potential. This property and the related pseudocapacitive response make polymer very attracting channel materials for electrolyte-gated (EG) transistors. Here, we propose a novel concept of "Trans-capacitor", an integrated device that exhibits the storage properties of a polymer/carbon hybrid supercapacitor and the low-voltage operation of an electrolyte-gated transistor.

  17. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

    Science.gov (United States)

    Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

    2014-06-13

    Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

  18. Integration of colloidal silicon nanocrystals on metal electrodes in single-electron transistor

    Science.gov (United States)

    Higashikawa, Yasuhiro; Azuma, Yasuo; Majima, Yutaka; Kano, Shinya; Fujii, Minoru

    2016-11-01

    We develop a facile process to integrate colloidal silicon nanocrystals (Si NCs) with metal electrodes in a single-electron transistor by self-assembly. Gold (Au) surface is modified by an amine-terminated self-assembled monolayer to have a positive potential. All-inorganic boron (B) and phosphorus (P) codoped Si NCs, with a negative surface potential and size-controllability, are selectively adsorbed on an amine-terminated Au surface by electrostatic attraction. We demonstrate the fabrication of SETs consisting of electroless-plated Au nanogap electrodes and codoped Si NCs using this process and observation of clear Coulomb diamonds at 9 K.

  19. Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors

    KAUST Repository

    Mei, Jianguo

    2013-05-08

    The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm2/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications. © 2013 American Chemical Society.

  20. Integration of Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors

    Science.gov (United States)

    2017-02-10

    Figure 6: Operation and structure of enzyme‐based glucose sensors  developed  at the Centre of  Organic  Electronics  (COE),  University  of...AFRL-AFOSR-JP-TR-2017-0009 Integration of Peptides into Organic Thin Film Transistor (OTFT)-based Printable Sensors Paul Dastoor UNIVERSITY OF...collection of information   if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION . 1

  1. Development of an integrated psychosocial treatment to address the medical burden associated with bipolar disorder.

    Science.gov (United States)

    Sylvia, Louisa G; Nierenberg, Andrew A; Stange, Jonathan P; Peckham, Andrew D; Deckersbach, Thilo

    2011-05-01

    We developed an integrated psychosocial treatment for bipolar disorder to decrease the disproportionate medical burden associated with this illness. Three treatment modules, Nutrition/weight loss, Exercise, and Wellness Treatment (NEW Tx) were administered in twelve 60-minute group sessions over 14 weeks. After the first group (N=4) had completed the treatment, it was revised, and then a second group (N=6) completed the revised treatment. Participants completed all of the study assessments and attended 82% of the sessions. Both groups added over 100 minutes of weekly exercise to their baseline duration. Participants in the second group showed improvements in their quality of life, depressive symptoms, and weight. It appears that NEW Tx may be a feasible intervention with promising pilot data for reducing the medical burden in bipolar disorder, but future research is needed to further evaluate the efficacy of NEW Tx.

  2. The damage effect and mechanism of the bipolar transistor caused by microwaves%双极晶体管微波损伤效应与机理

    Institute of Scientific and Technical Information of China (English)

    马振洋; 柴常春; 任兴荣; 杨银堂; 陈斌

    2012-01-01

    结合Si基n~+-p-n-n~+外延平面双极晶体管,考虑了器件自热、高电场下的载流子迁移率退化和载流子雪崩产生效应,建立了其在高功率微波(high power microwave,HPM)作用下的二维电热模型.通过分析器件内部电场强度、电流密度和温度分布随信号作用时间的变化,研究了频率为1 GHz的等效电压信号由基极和集电极注入时双极晶体管的损伤效应和机理.结果表明集电极注入时器件升温发生在信号的负半周,在正半周时器件峰值温度略有下降,与集电极注入相比基极注入更容易使器件毁伤,其易损部位是B-E结.对初相分别为0和π的两个高幅值信号的损伤研究结果表明,初相为π的信号更容易损伤器件,而发射极串联电阻可以有效的提高器件的抗微波损伤能力.%Combining self-heating effect,mobility degradation in high electric field and avalanche generation effect,a two-dimensional electro-thermal model of the typical silicon-based n~+-p-n-n~+ structure bipolar transistor induced by high power microwave is established in this paper.By analyzing the variations of device internal distributions of the electric field,the current density and the temperature with time,a detailed investigation of the damage effect and the mechanism of the bipolar transistor under the injection of 1 GHz equivalent voltage signals from the base and collector is performed.The results show that temperature elevation occurs in the negative half-period and the maximum temperature falls slightly in the positive half-period when the signals are injected from the collector.Compared with the former,device damage occurs easily with the signals injected from the base.Specifically,the base-emitter junction is susceptible to damage.The damage results caused by two large-amplitude signals with initial phases of 0 andπrespectively indicate that the injected signal with an initial phase ofπis liable to cause device damage

  3. Integration of field emitter array and thin-film transistor using polycrystalline silicon process technology

    CERN Document Server

    Song, Y H; Kang, S Y; Park Jeong Man; Cho, K I

    1998-01-01

    We present the monolithic integration of a gated polycrystalline silicon field emitter array (poly-Si FEA) and a thin-film transistor(TFT) on an insulating substrate for active-matrix field emission displays (AMFEDs). The TFT was designed to have low off-state currents even at a high drain voltage. Amorphous silicon has been used as a starting material of the poly-Si FEA for improving surface smoothness and uniformity of the tips, and the gate holes have been formed by using an etch-back process. The integrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in great improvement in the emission reliability along with a low-voltage control, below 15 V, of field emission, The developed technology has potential applications in AMFEDs on glass substrates.

  4. High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

    Science.gov (United States)

    Tian, Ye; Zetterling, Carl-Mikael

    2017-09-01

    This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

  5. Field-effect tunneling transistor based on vertical graphene heterostructures

    OpenAIRE

    Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K.S.; Ponomarenko, L. A.

    2012-01-01

    We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.

  6. Integrated Microfluidic Membrane Transistor Utilizing Chemical Information for On-Chip Flow Control.

    Science.gov (United States)

    Frank, Philipp; Schreiter, Joerg; Haefner, Sebastian; Paschew, Georgi; Voigt, Andreas; Richter, Andreas

    2016-01-01

    Microfluidics is a great enabling technology for biology, biotechnology, chemistry and general life sciences. Despite many promising predictions of its progress, microfluidics has not reached its full potential yet. To unleash this potential, we propose the use of intrinsically active hydrogels, which work as sensors and actuators at the same time, in microfluidic channel networks. These materials transfer a chemical input signal such as a substance concentration into a mechanical output. This way chemical information is processed and analyzed on the spot without the need for an external control unit. Inspired by the development electronics, our approach focuses on the development of single transistor-like components, which have the potential to be used in an integrated circuit technology. Here, we present membrane isolated chemical volume phase transition transistor (MIS-CVPT). The device is characterized in terms of the flow rate from source to drain, depending on the chemical concentration in the control channel, the source-drain pressure drop and the operating temperature.

  7. High-performance integrated field-effect transistor-based sensors.

    Science.gov (United States)

    Adzhri, R; Md Arshad, M K; Gopinath, Subash C B; Ruslinda, A R; Fathil, M F M; Ayub, R M; Nor, M Nuzaihan Mohd; Voon, C H

    2016-04-21

    Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications.

  8. Organic nanofibers integrated by transfer technique in field-effect transistor devices

    DEFF Research Database (Denmark)

    Tavares, Luciana; Kjelstrup-Hansen, Jakob; Thilsing-Hansen, Kasper;

    2011-01-01

    The electrical properties of self-assembled organic crystalline nanofibers are studied by integrating these on field-effect transistor platforms using both top and bottom contact configurations. In the staggered geometries, where the nanofibers are sandwiched between the gate and the source-drain...... light on the charge injection and transport properties for such organic nanostructures and thus constitute a significant step forward towards a nanofiber-based light-emitting device.......-drain electrodes, a better electrical conduction is observed compared to the coplanar geometry where the nanofibers are placed over the gate and the source-drain electrodes. Qualitatively different output characteristics were observed for top and bottom contact devices reflecting the significantly different...... contact resistances. Bottom contact devices are dominated by contact effects while the top contact device characteristics are determined by the nanofiber bulk properties. It is found that the contact resistance is lower for crystalline nanofibers when compared to amorphous thin films. These results shed...

  9. Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

    Science.gov (United States)

    Alexander-Webber, Jack A.; Sagade, Abhay A.; Aria, Adrianus I.; Van Veldhoven, Zenas A.; Braeuninger-Weimer, Philipp; Wang, Ruizhi; Cabrero-Vilatela, Andrea; Martin, Marie-Blandine; Sui, Jinggao; Connolly, Malcolm R.; Hofmann, Stephan

    2017-03-01

    We demonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhanced mobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD) Al2O3 by tailoring the growth parameters to achieve effective device encapsulation whilst enabling the passivation of charge traps in the underlying gate dielectric. We relate the passivation of charge trap states in the vicinity of the graphene to conformal growth of ALD oxide governed by in situ gaseous H2O pretreatments. We demonstrate the long term stability of such encapsulation techniques and the resulting insensitivity towards additional lithography steps to enable vertical device integration of graphene for multi-stacked electronics fabrication.

  10. Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography,metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

  11. Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

  12. Longer lithium exposure is associated with better white matter integrity in older adults with bipolar disorder.

    Science.gov (United States)

    Gildengers, Ariel G; Butters, Meryl A; Aizenstein, Howard J; Marron, Megan M; Emanuel, James; Anderson, Stewart J; Weissfeld, Lisa A; Becker, James T; Lopez, Oscar L; Mulsant, Benoit H; Reynolds, Charles F

    2015-05-01

    Bipolar disorder (BD) is associated with cognitive dysfunction and structural brain abnormalities. In human and non-human studies, lithium has been related to neuroprotective and neurotrophic effects. We explored whether lithium treatment is related to better brain integrity and cognitive function in older adults with BD. We examined cognitive and neuroimaging data in 58 individuals with BD [mean (standard deviation) age = 64.5 (9.8) years] and 21 mentally healthy comparators (controls) of similar age and education. Subjects received comprehensive neurocognitive assessment and structural brain imaging, examining total gray matter volume, overall white matter integrity (fractional anisotropy), and total white matter hyperintensity burden. In comparison to controls, subjects with BD had worse overall cognitive performance, lower total gray matter volume, and lower white matter integrity. Among subjects with BD, longer duration of lithium treatment was related to higher white matter integrity after controlling for age and vascular disease burden, but not with better cognitive performance. Lithium treatment appears to be related to better brain integrity in older individuals with BD, in particular, in those who take lithium long-term. While intriguing, these findings need to be confirmed in a larger sample. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  13. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

    Science.gov (United States)

    Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

    2016-08-10

    Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

  14. Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500

  15. High Temperature Heterojunction Bipolar Transistors

    Science.gov (United States)

    1994-04-15

    2700 cmW/V-s at room temperature, a far higher value than ever found for GaN or AlGaN. Thus a GaN/ InGaN HEMT would be analogous to InP/InGaAs HEMTs...Spire’s ECR plasma source modif led as a crystal growth reactor. 8 The substrate for the film deposition is mounted on a sample holder which is...The three samples from the second growth run were also characterized. One sample was found to have a very even frosty white haze on it. The other

  16. Investigation of carbon profiles for enhanced boron confinement and improved carrier transport in strained silicon germanium nanolayers for heterojunction bipolar transistors

    Science.gov (United States)

    Enicks, Darwin Gene

    This research covers a breadth of topics, in Chapters 1 through 7, ranging from the crystal lattice, to dopant diffusion in SiGe, to SiGe and SiGeC chemical vapor deposition, to the Si/SiGe and Si/SiGeC energy band structure, and NPN SiGeC HBT AC and DC characteristics. Chapters 8 and 9 contain the results of the research, which relates the film growth and carbon positioning to boron diffusion, sheet resistance, and device performance; specifically current gain, fmax, and noise figures of merit. The first objective of the dissertation was to investigate carbon doping profiles in nano-layers (≤32 nm) of silicon germanium (Si1-xGe x), and provide an understanding of "remote carbon boron confinement" (RCBC), which is demonstrated to exploit the advantages of carbon to increase NPN HBT (heterojunction bipolar transistor) performance, reduce base resistance, and improve overall noise figures of merit. The second objective was to investigate the noise characteristics of this method compared to the standard method of placing carbon throughout the lattice, which is known as "uniform carbon boron confinement" (UCBC). The current technological development towards smaller and faster devices has forced engineers and scientists to look into materials other than silicon, but which are highly compatible. A natural choice is the Si1-xGe x alloy, since Ge is also a Group IV. Si1-xGex has the same lattice structure as Si, but its lattice constant is 4.2% larger (aSi = 0.543nm, aGe = 0.567nm), and the bandgap is less than that of Si (Eg_Si = 1.11eV, Eg_Ge = 0.67eV). This opens the possibility of bandgap, strain, and dopant diffusion engineering, all of which affect the material and electronic properties of devices. The primary benefit of carbon is to reduce the diffusion of boron in Si1-xGex thus keeping the base narrow for significantly reduced electron transit times and increased unity gain cutoff frequencies (fT). However the utilization of carbon reduces base conductivity and

  17. Low Turn-on Voltage of InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor%低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管

    Institute of Scientific and Technical Information of China (English)

    郑丽萍; 严北平; 孙海锋; 刘新宇; 和致经; 吴德馨

    2003-01-01

    采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPN InGaP/GaAsSb/GaAs双异质结晶体管(double heterojunction bipolar transistor,DHBT).器件性能如下:BE结的正向开启电压(turn-on voltage)仅为0.73V;当IB=1μA/step时,直流增益达到了100,BVCEO=5~6V.通过对基区不同Sb含量器件的比较得到,器件的直流特性与基区Sb的含量有关.

  18. Development of Integrally Molded Bipolar Plates for All-Vanadium Redox Flow Batteries

    Directory of Open Access Journals (Sweden)

    Chih-Hsun Chang

    2016-05-01

    Full Text Available All-vanadium redox flow batteries (VRBs are potential energy storage systems for renewable power sources because of their flexible design, deep discharge capacity, quick response time, and long cycle life. To minimize the energy loss due to the shunt current, in a traditional design, a flow field is machined on two electrically insulated frames with a graphite plate in between. A traditional bipolar plate (BP of a VRB consists of many components, and thus, the assembly process is time consuming. In this study, an integrally molded BP is designed and fabricated to minimize the manufacturing cost. First, the effects of the mold design and injection parameters on frame formability were analyzed by simulation. Second, a new graphite plate design for integral molding was proposed, and finally, two integrally molded BPs were fabricated and compared. Results show that gate position significantly affects air traps and the maximum volume shrinkage occurs at the corners of a BP. The volume shrinkage can be reduced using a large graphite plate embedded within the frame.

  19. Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

    Science.gov (United States)

    Shi, Mao-Lin; Chen, Lin; Zhang, Tian-Bao; Xu, Jing; Zhu, Hao; Sun, Qing-Qing; Zhang, David Wei

    2017-09-01

    The lack of stable and efficient techniques to synthesize high-quality large-area thin films is one of the major bottlenecks for the real-world application of the 2D transition metal dichalcogenides. In this work, the growth of molybdenum disulfide (MoS2 ) on sapphire substrates by sulfurizing the MoO3 film deposited by atomic layer deposition (ALD) is reported. The advantages of the ALD method can be well inherited, and the synthesized MoS2 films exhibit excellent layer controllability, wafer-scale uniformity, and homogeneity. MoS2 films with desired thickness can be obtained by varying MoO3 ALD cycles. The atomic force microscope and Raman measurements demonstrate that the ALD-based MoS2 has good uniformity. Clear Raman shift as a function of the film thickness is observed. Field-effect transistor devices are fabricated through a transfer-free and top-down process. High On/Off current ratio (≈10(4) ) and medium-level electron mobilities (≈0.76 cm(2) V(-1) s(-1) for monolayer, and 5.9 cm(2) V(-1) s(-1) for four-layer) are obtained. The work opens up an attractive approach to realize the application of wafer-scale 2D materials in integrated circuits and systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Organic nanofibers integrated by transfer technique in field-effect transistor devices

    Directory of Open Access Journals (Sweden)

    Tavares Luciana

    2011-01-01

    Full Text Available Abstract The electrical properties of self-assembled organic crystalline nanofibers are studied by integrating these on field-effect transistor platforms using both top and bottom contact configurations. In the staggered geometries, where the nanofibers are sandwiched between the gate and the source-drain electrodes, a better electrical conduction is observed when compared to the coplanar geometry where the nanofibers are placed over the gate and the source-drain electrodes. Qualitatively different output characteristics were observed for top and bottom contact devices reflecting the significantly different contact resistances. Bottom contact devices are dominated by contact effects, while the top contact device characteristics are determined by the nanofiber bulk properties. It is found that the contact resistance is lower for crystalline nanofibers when compared to amorphous thin films. These results shed light on the charge injection and transport properties for such organic nanostructures and thus constitute a significant step forward toward a nanofiber-based light-emitting device.

  1. Development of high-performance printed organic field-effect transistors and integrated circuits.

    Science.gov (United States)

    Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

    2015-10-28

    Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

  2. High-performance integrated field-effect transistor-based sensors

    Energy Technology Data Exchange (ETDEWEB)

    Adzhri, R., E-mail: adzhri@gmail.com [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Md Arshad, M.K., E-mail: mohd.khairuddin@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); School of Microelectronic Engineering (SoME), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Gopinath, Subash C.B., E-mail: subash@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); School of Bioprocess Engineering (SBE), Universiti Malaysia Perlis (UniMAP), Arau, Perlis (Malaysia); Ruslinda, A.R., E-mail: ruslinda@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Fathil, M.F.M., E-mail: faris.fathil@gmail.com [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Ayub, R.M., E-mail: ramzan@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Nor, M. Nuzaihan Mohd, E-mail: m.nuzaihan@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Voon, C.H., E-mail: chvoon@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia)

    2016-04-21

    Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications. - Highlights: • Performance of FET-based biosensors for the detection of biomolecules is presented. • Silicon nanowire, polyaniline and graphene are the highlighted nanoscaled materials as sensing transducers. • The importance of surface material interaction with the surrounding environment is discussed. • Different device structure architectures for ease in fabrication and high sensitivity of sensing are presented.

  3. Integrated transcriptome and methylome analysis in youth at high risk for bipolar disorder: a preliminary analysis.

    Science.gov (United States)

    Fries, G R; Quevedo, J; Zeni, C P; Kazimi, I F; Zunta-Soares, G; Spiker, D E; Bowden, C L; Walss-Bass, C; Soares, J C

    2017-03-14

    First-degree relatives of patients with bipolar disorder (BD), particularly their offspring, have a higher risk of developing BD and other mental illnesses than the general population. However, the biological mechanisms underlying this increased risk are still unknown, particularly because most of the studies so far have been conducted in chronically ill adults and not in unaffected youth at high risk. In this preliminary study we analyzed genome-wide expression and methylation levels in peripheral blood mononuclear cells from children and adolescents from three matched groups: BD patients, unaffected offspring of bipolar parents (high risk) and controls (low risk). By integrating gene expression and DNA methylation and comparing the lists of differentially expressed genes and differentially methylated probes between groups, we were able to identify 43 risk genes that discriminate patients and high-risk youth from controls. Pathway analysis showed an enrichment of the glucocorticoid receptor (GR) pathway with the genes MED1, HSPA1L, GTF2A1 and TAF15, which might underlie the previously reported role of stress response in the risk for BD in vulnerable populations. Cell-based assays indicate a GR hyporesponsiveness in cells from adult BD patients compared to controls and suggest that these GR-related genes can be modulated by DNA methylation, which poses the theoretical possibility of manipulating their expression as a means to counteract the familial risk presented by those subjects. Although preliminary, our results suggest the utility of peripheral measures in the identification of biomarkers of risk in high-risk populations and further emphasize the potential role of stress and DNA methylation in the risk for BD in youth.

  4. A Scalable Mextram Model for Advanced Bipolar Circuit Design

    NARCIS (Netherlands)

    Wu, H.-C.

    2007-01-01

    In this thesis, a referenced based scaling approach and its parameter extraction for the bipolar transistor model Mextram is proposed. It is mainly based on the physical properties of the Mextram parameters, which scale with the junction temperature and geometry of the bipolar transistor. The scalab

  5. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

    Science.gov (United States)

    Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

    2017-09-01

    The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

  6. DTI AND MYELIN PLASTICITY IN BIPOLAR DISORDER: INTEGRATING NEUROIMAGING AND NEUROPATHOLOGICAL FINDINGS.

    Directory of Open Access Journals (Sweden)

    MARCELLA eBELLANI

    2016-03-01

    Full Text Available Bipolar disorder (BD is a major psychiatric illness with a chronic recurrent course, ranked among the worldwide leading disabling diseases. Its pathophysiology is still not completely understood, and findings are still inconclusive, though a great interest on the topic has been constantly raised by magnetic resonance imaging (MRI, genetic and neuropathological studies. In recent years, diffusion tensor imaging (DTI investigations have prompted interest in the key role of White Matter (WM abnormalities in BD.In this report we summarized and commented recent findings from DTI studies in BD, reporting fractional anisotropy (FA as putative measure of WM integrity, as well as recent data from neuropathological studies focusing on oligodendrocyte involvement in WM alterations in BD.DTI research indicates that BD is most commonly associated with a WM disruption within the fronto-limbic network, which may be accompanied by other WM changes spread throughout temporal and parietal regions.Neuropathological studies, mainly focused on the fronto-limbic network, have repeatedly shown a loss of oligodendrocyte cell count underlying WM alterations, although an increased oligodendrocyte density has been also documented suggesting a putative role in remyelination processes for oligodendrocytes in BD.According to our review, a greater integration between DTI and morphological findings is needed in order to elucidate processes affecting WM, either glial loss or myelin plasticity, on the basis of a more targeted research in BD.

  7. Lower Orbital Frontal White Matter Integrity in Adolescents with Bipolar I Disorder

    Science.gov (United States)

    Kafantaris, Vivian; Kingsley, Peter; Ardekani, Babak; Saito, Ema; Lencz, Todd; Lim, Kelvin; Szeszko, Philip

    2009-01-01

    Patients with bipolar I disorder demonstrated white matter abnormalities in white matter regions as seen through the use of diffusion tensor imaging. The findings suggest that white matter abnormalities in pediatric bipolar disorder may be useful in constructing neurobiological models of the disorder.

  8. Quantum thermal transistor

    CERN Document Server

    Joulain, Karl; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-01-01

    We demonstrate that a thermal transistor can be made up with a quantum system of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved determining the heat fluxes by means of the strong-coupling formalism. For the case of 3 interacting spins, in which one of them is coupled to the other 2, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nano systems.

  9. Quantum Thermal Transistor.

    Science.gov (United States)

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-05-20

    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

  10. The association of sleep and physical activity with integrity of white matter microstructure in bipolar disorder patients and healthy controls.

    Science.gov (United States)

    Verkooijen, Sanne; Stevelink, Remi; Abramovic, Lucija; Vinkers, Christiaan H; Ophoff, Roel A; Kahn, René S; Boks, Marco P M; van Haren, Neeltje E M

    2017-04-30

    We investigate how the sleep disruptions and irregular physical activity levels that are prominent features of bipolar disorder (BD) relate to white matter microstructure in patients and controls. Diffusion tension imaging (DTI) and 14-day actigraphy recordings were obtained in 51 BD I patients and 55 age-and-gender-matched healthy controls. Tract-based spatial statistics (TBSS) was used for voxelwise analysis of the association between fractional anisotropy (FA) and sleep and activity characteristics in the overall sample. Next, we investigated whether the relation between sleep and activity and DTI measures differed for patients and controls. Physical activity was related to increased integrity of white matter microstructure regardless of bipolar diagnosis. The relationship between sleep and white matter microstructure was more equivocal; we found an expected association between higher FA and effective sleep in controls but opposite patterns in bipolar patients. Confounding factors such as antipsychotic medication use are a likely explanation for these contrasting findings and highlight the need for further study of medication-related effects on white matter integrity. Copyright © 2017 Elsevier Ireland Ltd. All rights reserved.

  11. Dual-gate thin-film transistors, integrated circuits and sensors

    NARCIS (Netherlands)

    Spijkman, M.-J.; Myny, K.; Smits, E.C.P.; Heremans, P.; Blom, P.W.M.; Leeuw, D.M. de

    2011-01-01

    The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the f

  12. Monolithic integration of detectors and transistors on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco [INFN, Sezione di Padova (Gruppo Collegato Trento), and Universita di Trento, Via Sommarive 14, 38050 Povo (Trento) (Italy)], E-mail: dallabe@dit.unitn.it; Batignani, Giovanni [INFN, Sezione di Pisa, and Universita di Pisa, Largo B. Pontecorvo 3, 56127 Pisa (Italy); Boscardin, Maurizio [ITC-irst, Divisione Microsistemi, Via Sommarive 18, 38050 Povo (Trento) (Italy); Bosisio, Luciano [INFN, Sezione di Trieste, and Universita di Trieste, Via A. Valerio 2, 34127 Trieste (Italy); Gregori, Paolo; Pancheri, Lucio; Piemonte, Claudio [ITC-irst, Divisione Microsistemi, Via Sommarive 18, 38050 Povo (Trento) (Italy); Ratti, Lodovico [INFN, Sezione di Pavia, and Universita di Pavia, Via Ferrata 1, 27100 Pavia (Italy); Verzellesi, Giovanni [INFN, Sezione di Padova (Gruppo Collegato Trento), and Universita di Modena e Reggio Emilia, Via Vignolese 905, 42100 Modena (Italy); Zorzi, Nicola [ITC-irst, Divisione Microsistemi, Via Sommarive 18, 38050 Povo (Trento) (Italy)

    2007-09-01

    We report on the most recent results from an R and D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.

  13. Dual-Gate Thin-Film Transistors, Integrated Circuits and Sensors

    NARCIS (Netherlands)

    Spijkman, Mark-Jan; Myny, Kris; Smits, Edsger C. P.; Heremans, Paul; Blom, Paul W. M.; de Leeuw, Dago M.

    2011-01-01

    The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the f

  14. Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

    Science.gov (United States)

    Ritter, D.; Hamm, R. A.; Feygenson, A.; Panish, M. B.; Chandrasekhar, S.

    1991-12-01

    The common emitter current gain of InP/Ga0.47In0.53As heterojunction bipolar transitors having a base doping level of 7×1019 cm-3 is found to increase monotonically with decreasing base thickness in the range of 200-1000 Å. The variation of the gain with base thickness WB is proportional to 1×W2B, as expected for diffusive base transport, and a high injection efficiency.

  15. Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

    Science.gov (United States)

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

    2015-10-01

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  16. Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

    KAUST Repository

    Alfaraj, Nasir

    2015-10-26

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  17. A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell.

    Science.gov (United States)

    Toumazou, Christofer; Thay, Tan Sri Lim Kok; Georgiou, Pantelis

    2014-03-28

    Semiconductor genetics is now disrupting the field of healthcare owing to the rapid parallelization and scaling of DNA sensing using ion-sensitive field-effect transistors (ISFETs) fabricated using commercial complementary metal -oxide semiconductor technology. The enabling concept of DNA reaction monitoring introduced by Toumazou has made this a reality and we are now seeing relentless scaling with Moore's law ultimately achieving the $100 genome. In this paper, we present the next evolution of this technology through the creation of the gene-sensitive integrated cell (GSIC) for label-free real-time analysis based on ISFETs. This device is derived from the traditional metal-oxide semiconductor field-effect transistor (MOSFET) and has electrical performance identical to that of a MOSFET in a standard semiconductor process, yet is capable of incorporating DNA reaction chemistries for applications in single nucleotide polymorphism microarrays and DNA sequencing. Just as application-specific integrated circuits, which are developed in much the same way, have shaped our consumer electronics industry and modern communications and memory technology, so, too, do GSICs based on a single underlying technology principle have the capacity to transform the life science and healthcare industries.

  18. Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

    Science.gov (United States)

    Buchner, S.; McMorrow, D.; Sibley, M.; Eaton, P.; Mavis, D.; Dusseau, L.; Roche, N. J-H.; Bernard, M.

    2009-01-01

    This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

  19. Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

    Science.gov (United States)

    Hoshi, Takuya; Kashio, Norihide; Sugiyama, Hiroki; Yokoyama, Haruki; Kurishima, Kenji; Ida, Minoru; Matsuzaki, Hideaki

    2017-07-01

    We report on a method for composition and doping control for metalorganic chemical vapor deposition of a double heterojunction bipolar transistor (DHBT) with a hybrid base structure consisting of a compositionally graded InGaAsSb for boosting an average electron velocity and a heavily doped thin GaAsSb for lowering the base contact resistivity. The GaAsSb contact layer can be formed by simply turning off the supply of In precursor tetramethylindium (TMIn) after the growth of the composition and doping graded InGaAsSb base. Consequently, the solid composition and hole concentration of hybrid base can be properly controlled by just modulating the supply of only TMIn and carbon tetrabromide. Secondary ion mass spectroscopy for the DHBT wafer reveals that the contents of In, Ga, and C inside the base are actually modulated from the collector side to the emitter side as expected. Transmission-line-model measurements were performed for the compositionally graded-InGaAsSb/GaAsSb hybrid base. The contact resistivity is estimated to be 5.3 Ω µm2, which is lower than half the value of a compositionally graded InGaAsSb base without the GaAsSb contact layer. The results indicate that the compositionally-graded-InGaAsSb/GaAsSb-contact hybrid base structure grown by this simple method is very advantageous for obtaining DHBTs with a very high maximum oscillation frequency.

  20. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

    Science.gov (United States)

    Hong, Wen-Chiang; Ku, Chieh-Jen; Li, Rui; Abbaslou, Siamak; Reyes, Pavel; Wang, Szu-Ying; Li, Guangyuan; Lu, Ming; Sheng, Kuang; Lu, Yicheng

    2016-10-01

    Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.

  1. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

    Science.gov (United States)

    Hong, Wen-Chiang; Ku, Chieh-Jen; Li, Rui; Abbaslou, Siamak; Reyes, Pavel; Wang, Szu-Ying; Li, Guangyuan; Lu, Ming; Sheng, Kuang; Lu, Yicheng

    2016-01-01

    Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass. PMID:27721484

  2. Covering sleeves can shield the high-voltage coils from lead chatter in an integrated bipolar ICD lead.

    Science.gov (United States)

    Cooper, Joshua M; Sauer, William H; Garcia, Fermin C; Krautkramer, Michael J; Verdino, Ralph J

    2007-02-01

    Integrated bipolar implantable cardioverter-defibrillator (ICD) leads use the distal high-voltage coil as both the ventricular sensing anode and the distal shocking electrode. Mechanical interactions between the distal ICD coil and other intracardiac leads have been reported to result in electrical oversensing and inappropriate ICD therapies. We sought to determine whether covering sleeves over the high-voltage coils of an integrated bipolar ICD lead could prevent sensed artefact from mechanical lead interactions. Endotak Reliance 0157 and Endotak Reliance-G 0185 leads, the latter with expanded polytetrafluoroethylene (ePTFE) sleeves covering the high-voltage coils, were connected to ICD generators and the leads were submerged in saline. Device programmers were used to communicate with the ICD generators, providing real-time electrogram recording throughout testing. A series of mechanical interactions were performed with the ICD leads, including sliding and striking each distal coil against metal and non-metal components of other ICD and pacemaker leads. All direct metal-metal interactions resulted in sensed electrical artefact, including interactions between the bare ICD coil and another bare ICD coil or metal pacemaker ring. Identical mechanical interactions where metal-metal contact was prevented due to an interposed ePTFE covering sleeve were electrically silent with no sensed artefact. A covering sleeve over the distal high-voltage coil of an integrated bipolar ICD lead can mechanically shield the lead from metal-metal interactions, which might otherwise result in sensed artefact and inappropriate ICD therapies or withholding of pacing output. This finding has implications for lead selection when a new ICD lead is to be implanted adjacent to abandoned intracardiac leads or lead fragments.

  3. Bipolar disorder

    Science.gov (United States)

    Manic depression; Bipolar affective disorder; Mood disorder - bipolar; Manic depressive disorder ... Fatigue or lack of energy Feelings of worthlessness, hopelessness, or guilt Loss of pleasure in activities once ...

  4. Maintenance Model of Integrated Psychosocial Treatment in Pediatric Bipolar Disorder: A Pilot Feasibility Study

    Science.gov (United States)

    West, Amy E.; Henry, David B.; Pavuluri, Mani N.

    2007-01-01

    Objective: The chronic and refractory course of pediatric bipolar disorder merits the study of adjunctive psychosocial interventions designed to facilitate long-term improvements. The objective of this study is to conduct a pilot study of a maintenance model of the child- and family-focused cognitive-behavioral therapy program (CFF-CBT), which…

  5. Variable Temperature High-Frequency Response of Heterostructure Transistors

    Science.gov (United States)

    Laskar, Joy

    1992-01-01

    The development of high performance heterostructure transistors is essential for emerging opto-electronic integrated circuits (OEICs) and monolithic microwave integrated circuits (MMICs). Applications for OEICs and MMICs include the rapidly growing telecommunications and personal communications markets. The key to successful OEIC and MMIC chip sets is the development of high performance, cost-effective technologies. In this work, several different transistor structures are investigated to determine the potential for high speed performance and the physical mechanisms controlling the ultimate device operation. A cryogenic vacuum microwave measurement system has been developed to study the high speed operation of modulation doped field-effect transistors (MODFETs), doped channel metal insulator field-effect transistors (MISFETs), and metal semiconductor field-effect transistors (MESFETs). This study has concluded that the high field velocity and not the low field mobility is what controls high frequency operation of GaAs based field-effect transistors. Both Al_{rm x} Ga_{rm 1-x}As/GaAs and InP/In_{rm y}Ga _{rm 1-y}As heterostructure bipolar transistors (HBTs) have also been studied at reduced lattice temperatures to understand the role of diffusive transport in the Al_{rm x} Ga_{rm 1-x}As/GaAs HBT and nonequilibrium transport in the InP/In _{rm y}Ga_ {rm 1-y}As HBT. It is shown that drift/diffusion formulation must be modified to accurately estimate the base delay time in the conventional Al _{rm x}Ga_ {rm 1-x}As/GaAs HBT. The reduced lattice temperature operation of the InP/In_ {rm y}Ga_{rm 1-y}As HBT demonstrates extreme nonequilibrium transport in the neutral base and collector space charge region with current gain cut-off frequency exceeding 300 GHz, which is the fastest reported transistor to date. Finally, the MODFET has been investigated as a three-terminal negative differential resistance (NDR) transistor. The existence of real space transfer is confirmed by

  6. DC operating points of transistor circuits

    Science.gov (United States)

    Trajkovic, Ljiljana

    Finding a circuit's dc operating points is an essential step in its design and involves solving systems of nonlinear algebraic equations. Of particular research and practical interests are dc analysis and simulation of electronic circuits consisting of bipolar junction and field-effect transistors (BJTs and FETs), which are building blocks of modern electronic circuits. In this paper, we survey main theoretical results related to dc operating points of transistor circuits and discuss numerical methods for their calculation.

  7. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates%不同剂量率下锗硅异质结双极晶体管电离损伤效应研究

    Institute of Scientific and Technical Information of China (English)

    孙亚宾; 付军; 许军; 王玉东; 周卫; 张伟; 崔杰; 李高庆; 刘志弘

    2013-01-01

    Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed;furthermore, the underlying physical mechanisms are analyzed and investigated in detail.%对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT),在不同辐照剂量率下进行60 Coγ射线的辐照效应与退火特性的研究。测量结果表明,两种辐照剂量率下,随着辐照总剂量增加,晶体管基极电流增大,共发射极电流放大倍数降低,且器件的辐照损伤、性能退化与辐照剂量率相关,低剂量率下辐照损伤较高剂量率严重。在经过与低剂量率辐照等时的退火后,高剂量率下的辐照损伤仍较低剂量率下的损伤低,即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS)。本文对相关的物理机理进行了探讨分析。

  8. Life Stress and Kindling in Bipolar Disorder: Review of the Evidence and Integration with Emerging Biopsychosocial Theories

    Science.gov (United States)

    Bender, Rachel E.; Alloy, Lauren B.

    2011-01-01

    Most life stress literature in bipolar disorder (BD) fails to account for the possibility of a changing relationship between psychosocial context and episode initiation across the course of the disorder. According to Post’s (1992) influential kindling hypothesis, major life stress is required to trigger initial onsets and recurrences of affective episodes, but successive episodes become progressively less tied to stressors and may eventually occur autonomously. Subsequent research on kindling has largely focused on unipolar depression (UD), and the model has been tested in imprecise and inconsistent ways. The aim of the present paper is to evaluate evidence for the kindling model as it applies to BD. We first outline the origins of the hypothesis, the evidence for the model in UD, and the issues needing further clarification. Next, we review the extant literature on the changing relationship between life stress and bipolar illness over time, and find that evidence from the methodologically strongest studies is inconsistent with the kindling hypothesis. We then integrate this existing body of research with two emerging biopsychosocial models of BD: the Behavioral Approach System dysregulation model, and the circadian and social rhythm theory. Finally, we present therapeutic implications and suggestions for future research. PMID:21334286

  9. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-01-01

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great in

  10. Management of bipolar depression

    Directory of Open Access Journals (Sweden)

    Jae Seung Chang

    2011-01-01

    Full Text Available Patients with bipolar disorder spend more time in a depressed than manic state, even with individualized treatment. To date, bipolar depression is often misdiagnosed and ineffectively managed both for acute episodes and residual symptoms. This review attempts to summarize the current status of available treatment strategies in the treatment of bipolar depression. For acute and prophylactic treatment, a substantial body of evidence supports the antidepressive efficacy of lithium for bipolar disorders and its antisuicidal effects. Among numerous anticonvulsants with mood-stabilizing properties, valproate and lamotrigine could be first-line options for bipolar depression. Due to receptor profile, mood-stabilizing properties of second-generation antipsychotics have been explored, and up to date, quetiapine and olanzapine appear to be a reasonable option for bipolar depression. The usefulness of antidepressants in bipolar depression is still controversial. Current guidelines generally recommend the cautious antidepressant use in combination with mood stabilizers to reduce the risk of mood elevation or cycle acceleration. Results from clinical trials on psychosocial intervention are promising, especially when integrated with pharmacotherapy. Most patients with bipolar depression need individualized and combined treatment, although the published evidence on this type of treatment strategy is limited. Future studies on the utility of currently available agents and modalities including psychosocial intervention are required.

  11. Low-power integrated-circuit driver for ferrite-memory word lines

    Science.gov (United States)

    Katz, S.

    1970-01-01

    Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.

  12. SIMULATION ANALYSIS ON PROPORTIONAL INTEGRAL AND DERIVATIVE CONTROL OF CLOSED LOOP DC MOTOR DRIVE WITH BIPOLAR VOLTAGE SWITCHING

    Directory of Open Access Journals (Sweden)

    P. Karpagavalli

    2013-01-01

    Full Text Available This study presents the performance of a new four quadrant single phase DC drive closed loop system controlled by proportional integral and derivative controller with Pulse Width Modulation (PWM full bridge DC-DC converter using bipolar voltage switching. The proposed method is found to be more efficient in improving the step response characteristics such as reducing the settling time, rise time, steady state error and maximum overshoot in speed response of the closed loop DC motor drive and also reduced total harmonics distortion in the AC line current when compared to open loop system. The proposed topologies were simulated using MATLAB/Simulink software package and the results were obtained.

  13. Bipolar Disorder (For Teens)

    Science.gov (United States)

    ... Loss Surgery? A Week of Healthy Breakfasts Shyness Bipolar Disorder KidsHealth > For Teens > Bipolar Disorder A A ... Bipolar Disorder en español Trastorno bipolar What Is Bipolar Disorder? Bipolar disorders are one of several medical ...

  14. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

    Science.gov (United States)

    Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Suryo Wasisto, Hutomo; Waag, Andreas

    2017-03-01

    Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

  15. Bipolar Disorder

    Science.gov (United States)

    Bipolar disorder is a serious mental illness. People who have it go through unusual mood changes. They ... The down feeling is depression. The causes of bipolar disorder aren't always clear. It runs in ...

  16. Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

    Energy Technology Data Exchange (ETDEWEB)

    Popov, V. V., E-mail: popov-slava@yahoo.co.uk [Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov 410019 (Russian Federation); Yermolaev, D. M.; Shapoval, S. Yu. [Institute of Microelectronic Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow Region 142432 (Russian Federation); Maremyanin, K. V.; Gavrilenko, V. I. [Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod 603950 (Russian Federation); Zemlyakov, V. E.; Bespalov, V. A.; Yegorkin, V. I. [National Research University of Electronic Technology, Zelenograd, Moscow 124498 (Russian Federation); Maleev, N. A.; Ustinov, V. M. [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

    2014-04-21

    A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10{sup −11} W/Hz{sup 0.5} in the unbiased mode of the detector operation.

  17. Nanowire-organic thin film transistor integration and scale up towards developing sensor array for biomedical sensing applications

    Science.gov (United States)

    Kumar, Prashanth S.; Hankins, Phillip T.; Rai, Pratyush; Varadan, Vijay K.

    2010-04-01

    Exploratory research works have demonstrated the capability of conducting nanowire arrays in enhancing the sensitivity and selectivity of bio-electrodes in sensing applications. With the help of different surface manipulation techniques, a wide range of biomolecules have been successfully immobilized on these nanowires. Flexible organic electronics, thin film transistor (TFT) fabricated on flexible substrate, was a breakthrough that enabled development of logic circuits on flexible substrate. In many health monitoring scenarios, a series of biomarkers, physical properties and vital signals need to be observed. Since the nano-bio-electrodes are capable of measuring all or most of them, it has been aptly suggested that a series of electrode (array) on single substrate shall be an excellent point of care tool. This requires an efficient control system for signal acquisition and telemetry. An array of flexible TFTs has been designed that acts as active matrix for controlled switching of or scanning by the sensor array. This array is a scale up of the flexible organic TFT that has been fabricated and rigorously tested in previous studies. The integration of nanowire electrodes to the organic electronics was approached by growing nanowires on the same substrate as TFTs and fl ip chip packaging, where the nanowires and TFTs are made on separate substrates. As a proof of concept, its application has been explored in various multi-focal biomedical sensing applications, such as neural probes for monitoring neurite growth, dopamine, and neuron activity; myocardial ischemia for spatial monitoring of myocardium.

  18. Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

    Science.gov (United States)

    Heo, Jinseong; Byun, Kyung-Eun; Lee, Jaeho; Chung, Hyun-Jong; Jeon, Sanghun; Park, Seongjun; Hwang, Sungwoo

    2013-01-01

    Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V.

  19. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Science.gov (United States)

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-03-29

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  20. A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

    Science.gov (United States)

    De Matteis, M.; De Blasi, M.; Vallicelli, E. A.; Zannoni, M.; Gervasi, M.; Bau, A.; Passerini, A.; Baschirotto, A.

    2017-02-01

    This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μ m technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

  1. Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

    Science.gov (United States)

    2017-01-01

    The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm–2 in full accumulation and a mobility–capacitance product of 7 × 10–3 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.

  2. Feasibility studies of microelectrode silicon detectors with integrated electronics

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.-F. E-mail: dallabe@itc.it; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N

    2002-02-01

    We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced.

  3. Feasibility studies of microelectrode silicon detectors with integrated electronics

    CERN Document Server

    Dalla Betta, Gian Franco; Bettarini, S; Boscardin, M; Bosisio, L; Carpinelli, M; Dittongo, S; Forti, F; Giorgi, M; Gregori, P; Lusiani, A; Manghisoni, M; Pignatel, Giogrio Umberto; Rama, M; Ratti, L; Re, V; Sandrelli, F; Speziali, V; Svelto, F; Zorzi, N

    2002-01-01

    We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced.

  4. The Complete Semiconductor Transistor and Its Incomplete Forms

    Institute of Scientific and Technical Information of China (English)

    Jie Binbin; Sah Chih-Tang

    2009-01-01

    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor,BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  5. Negative affect predicts social functioning across schizophrenia and bipolar disorder: Findings from an integrated data analysis.

    Science.gov (United States)

    Grove, Tyler B; Tso, Ivy F; Chun, Jinsoo; Mueller, Savanna A; Taylor, Stephan F; Ellingrod, Vicki L; McInnis, Melvin G; Deldin, Patricia J

    2016-09-30

    Most people with a serious mental illness experience significant functional impairment despite ongoing pharmacological treatment. Thus, in order to improve outcomes, a better understanding of functional predictors is needed. This study examined negative affect, a construct comprised of negative emotional experience, as a predictor of social functioning across serious mental illnesses. One hundred twenty-seven participants with schizophrenia, 113 with schizoaffective disorder, 22 with psychosis not otherwise specified, 58 with bipolar disorder, and 84 healthy controls (N=404) completed self-report negative affect measures. Elevated levels of negative affect were observed in clinical participants compared with healthy controls. For both clinical and healthy control participants, negative affect measures were significantly correlated with social functioning, and consistently explained significant amounts of variance in functioning. For clinical participants, this relationship persisted even after accounting for cognition and positive/negative symptoms. The findings suggest that negative affect is a strong predictor of outcome across these populations and treatment of serious mental illnesses should target elevated negative affect in addition to cognition and positive/negative symptoms.

  6. Design Considerations of an Active Integrated Antenna with Negative Resistance Transistor Oscillator

    Directory of Open Access Journals (Sweden)

    J. Bartolic

    2005-12-01

    Full Text Available The design of an active integrated antenna with negative resistancetransistor oscillator has been described. Simple but reasonablyaccurate analysis of oscillation start-up and steady state operatingfrequency prediction is presented. The active antenna prototype wasmanufactured and its operating frequency, EIRP and radiation patternswere measured. Two of these antennas were integrated in active arrayscoupled in E- and H-planes. The inter-element distance in the arrayswas optimized to obtain in-phase operation and mutual injectionlocking. Very good power combining efficiency was measured and beamscanning capabilities were demonstrated for both arrays.

  7. Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

    Science.gov (United States)

    Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Prober, D. E.; Rhee, K. W.; Schoelkopf, R. J.; Stahle, C. M.; Teufel, J.; Wollack, E. J.

    2004-01-01

    For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

  8. Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

    Energy Technology Data Exchange (ETDEWEB)

    Shiau, S H; Gau, C [Institute of Aeronautics and Astronautics, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Liu, C W; Dai, B T [National Nano Device Laboratories, No. 27, Nanke 3rd Road, Science-based Industrial Park, Hsin-shi, Tainan, Taiwan (China)], E-mail: gauc@mail.ncku.edu.tw

    2008-03-12

    This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.

  9. Traços de temperamento associados ao transtorno afetivo bipolar: uma revisão integrativa da literatura Temperament traits associated with bipolar affective disorder: an integrative literature review

    Directory of Open Access Journals (Sweden)

    Alina Gomide Vasconcelos

    2011-01-01

    Full Text Available Estudos associam características do temperamento ao mau ajustamento e desenvolvimento de transtornos psiquiátricos, entendendo-os como aspectos de vulnerabilidade à psicopatologia. O objetivo deste estudo é realizar uma revisão integrativa da literatura a respeito dos traços de temperamento que caracterizam o transtorno afetivo bipolar em relação à população geral. Para tanto, foi realizada uma pesquisa sistemática sobre o tema nas bases de dados MEDLINE, PsycINFO e LILACS, utilizando os descritores bipolar disorder, temperament e/ou personality, no período compreendido entre janeiro de 2000 e dezembro de 2010. A consulta às bases de dados foi realizada em janeiro de 2011. A busca resultou em 199 artigos potenciais para compor a revisão. Após aplicação dos critérios de exclusão, 15 artigos foram selecionados para revisão e analisados na íntegra. Dentre os estudos selecionados, notou-se heterogeneidade no perfil das amostras e nos traços específicos de temperamento avaliados e respectivos instrumentos utilizados. Características de temperamento de pacientes bipolares são identificadas com base em diferentes modelos teóricos. De forma congruente, os resultados de cinco estudos apontaram que pacientes bipolares apresentam características relacionadas ao traço de personalidade denominado neuroticismo. Revisões futuras devem utilizar descritores mais específicos e restringir a busca a estudos com delineamento longitudinal.Studies have suggested an association between temperament characteristics and adjustment and psychiatric disorders, describing them as different manifestations of vulnerability to psychopathology. The objective of this study was to conduct an integrative review of the literature on temperament traits typical of bipolar patients in relation to the general population. A systematic search was conducted on the MEDLINE, PsycINFO and LILACS databases, using the headings bipolar disorder, temperament and

  10. InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

    DEFF Research Database (Denmark)

    Kraemer, Tomas; Ostermay, Ina; Jensen, Thomas;

    2013-01-01

    This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from...

  11. The resonant body transistor.

    Science.gov (United States)

    Weinstein, Dana; Bhave, Sunil A

    2010-04-14

    This paper introduces the resonant body transistor (RBT), a silicon-based dielectrically transduced nanoelectromechanical (NEM) resonator embedding a sense transistor directly into the resonator body. Combining the benefits of FET sensing with the frequency scaling capabilities and high quality factors (Q) of internal dielectrically transduced bar resonators, the resonant body transistor achieves >10 GHz frequencies and can be integrated into a standard CMOS process for on-chip clock generation, high-Q microwave circuits, fundamental quantum-state preparation and observation, and high-sensitivity measurements. An 11.7 GHz bulk-mode RBT is demonstrated with a quality factor Q of 1830, marking the highest frequency acoustic resonance measured to date on a silicon wafer.

  12. An Electrochromic Bipolar Membrane Diode.

    Science.gov (United States)

    Malti, Abdellah; Gabrielsson, Erik O; Crispin, Xavier; Berggren, Magnus

    2015-07-01

    Conducting polymers with bipolar membranes (a complementary stack of selective membranes) may be used to rectify current. Integrating a bipolar membrane into a polymer electrochromic display obviates the need for an addressing backplane while increasing the device's bistability. Such devices can be made from solution-processable materials.

  13. Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

    Science.gov (United States)

    McGuire, Felicia A.; Cheng, Zhihui; Price, Katherine; Franklin, Aaron D.

    2016-08-01

    There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challenges to such NC-FETs is the variable substrate capacitance exhibited in 3D semiconductor channels (bulk, Fin, or nanowire) that minimizes the extent of sub-60 mV/decade switching. In this work, we demonstrate 2D NC-FETs that combine the NC effect with 2D MoS2 channels to extend the steep switching behavior. Using the ferroelectric polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)), these 2D NC-FETs are fabricated by modification of top-gated 2D FETs through the integrated addition of P(VDF-TrFE) into the gate stack. The impact of including an interfacial metal between the ferroelectric and dielectric is studied and shown to be critical. These 2D NC-FETs exhibit a decrease in subthreshold swing from 113 mV/decade down to 11.7 mV/decade at room temperature with sub-60 mV/decade switching occurring over more than 4 decades of current. The P(VDF-TrFE) proves to be an unstable option for a device technology, yet the superb switching behavior observed herein opens the way for further exploration of nanomaterials for extremely low-voltage NC-FETs.

  14. Transistor Effect in Improperly Connected Transistors.

    Science.gov (United States)

    Luzader, Stephen; Sanchez-Velasco, Eduardo

    1996-01-01

    Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

  15. AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers.

    Science.gov (United States)

    Xiang, Y; Reuterskiöld-Hedlund, C; Yu, X; Yang, C; Zabel, T; Hammar, M; Akram, M N

    2015-06-15

    We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60°C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection for reduced extrinsic resistances.

  16. Bipolar Disorder.

    Science.gov (United States)

    Spearing, Melissa

    Bipolar disorder, a brain disorder that causes unusual shifts in a person's mood, affects approximately one percent of the population. It commonly occurs in late adolescence and is often unrecognized. The diagnosis of bipolar disorder is made on the basis of symptoms, course of illness, and when possible, family history. Thoughts of suicide are…

  17. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  18. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

    Science.gov (United States)

    Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K. S.; Ponomarenko, L. A.

    2012-02-01

    An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.

  19. Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates

    Science.gov (United States)

    Yan, L.; Olsen, S. H.; Escobedo-Cousin, E.; O'Neill, A. G.

    2008-05-01

    This work presents a detailed study of ultrathin gate oxide integrity in strained Si metal oxide silicon field effect transistors (MOSFETs) fabricated on thin virtual substrates aimed at reducing device self-heating. The gate oxide quality and reliability of the devices are compared to those of simultaneously processed Si control devices and conventional thick virtual substrate devices that have the same Ge content (20%), strained Si channel thickness, and channel strain. The thin virtual substrates offer the same mobility enhancement as the thick virtual substrates (˜100% compared to universal mobility data) and are effective at reducing device self-heating. Up to 90% improvement in gate leakage current is demonstrated for the strained Si n-channel MOSFETs compared to that for the bulk Si controls. The lower leakage arises from the increased electron affinity in tensile strained Si and is significant due to the sizeable strain generated by using wafer-level stressors. The strain-induced leakage reductions also lead to major improvements in stress-induced leakage current (SILC) and oxide reliability. The lower leakage current of the thin and thick virtual substrate devices compares well to theoretical estimates based on the Wentzel-Kramers-Brillouin approximation. Breakdown characteristics also differ considerably between the devices, with the strained Si devices exhibiting a one order of magnitude increase in time to hard breakdown (THBD) compared to the Si control devices following high-field stressing at 17 MV cm-1. The strained Si devices are exempted from soft breakdown. Experimental based analytical leakage modeling has been carried out across the field range for the first time in thin oxides and demonstrates that Poole-Frenkel (PF) emissions followed by Fowler-Nordheim tunneling dominate gate leakage current at low fields in all of the devices. This contrasts to the frequently reported assumption that direct tunneling dominates gate leakage in ultrathin

  20. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-03-03

    In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

  1. Analysis and Simulation Modeling for Variable Capacitance Characteristic of Integrated PMOS Transistor%集成PMOS管变容特性分析与仿真建模

    Institute of Scientific and Technical Information of China (English)

    曹新亮; 张威虎

    2011-01-01

    为适应PMOS变容管在集成电路设计中的晶体管级仿真,在分析MOS变容管特性的基础上,通过确定关键点、以曲线拟合的方法建立与工艺参数相关的PMOS集成变容管高频特性模型.选用Charted0.35μm这个特定的工艺库,并离散地改变电容连接的PMOS静态偏压、用HSpice仿真并对寄生电容提取后描绘出变容特性的准静态曲线;用Matlab对所建的简化高频变容模型进行仿真、得出高频变容曲线.仿真与理论结果相比较表明:PMOS管变容特性曲线与理论曲线的变化趋势吻合;2种仿真对变容显著区吻合较好.从而证明了PMOS集成变容管高频简化模型的正确性.%In order to adapt transistor-level simulation for PMOS variable capacitance transistor in the integrated circuit design, based on the analysis of the MOS variable capacitance characteristic, a high-frequency characteristic model related to process parameters of the integrated PMOS transistor was established with the methods of curve fitting and determinaton of key points. During modeling, the Charted 0. 35μm process database was selected, the static bias of capacitor-connected PMOS was changed dispersively, and the quasi-static characteristics curve was described after extracting the parasitic capacitance by HSPICE simulation. A simplified high-frequency variable capacitance model was simulated witb Matlab, thereby the curve of high-frequency variable capacitance curve was derived. The results show that the high-frequency characterisztic curve trend of PMOS variable capacitance transistor is consistent with the theoretical curves. Furthermore, two kinds of simulation agrees with each other in the variable capacitance significant region. Thus, it is proved that the simplified high-frequency model of integrated PMOS variable capacitance is correct.

  2. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    Science.gov (United States)

    Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Münzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D.

    2017-03-01

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V-1 s-1 and 0.013 cm2 V-1 s-1, respectively, current on/off ratio in the range 102-104, and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  3. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  4. 64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention

    Science.gov (United States)

    Zhang, Xizhen; Takahashi, Mitsue; Takeuchi, Ken; Sakai, Shigeki

    2012-04-01

    A 64 kbit (kb) one-transistor-type ferroelectric memory array was fabricated and characterized. Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors (FeFETs) were used as the memory cells. The gate length and width were 5 and 5 µm, respectively. The array design was based on NAND flash memory organized as 8 word lines × 32 blocks × 256 bit lines. Erase, program, and nondestructive-read operations were demonstrated in every block. Threshold-voltage (Vth) reading of all the 64 kb memory cells showed a clear separation between their all-erased and all-programmed states. A checkerboard pattern was also programmed in a block and the two distinguishable Vth distributions were read out. The Vth retention of a block of 2 kb memory cells showed no significant degradation after two days.

  5. Fast turn-on of an NMOS ESD protection transistor: measurements and simulations

    NARCIS (Netherlands)

    Luchies, J.R.M.; Kort, de C.G.M.; Verweij, J.F.

    1995-01-01

    The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the trigge

  6. A 38 to 44GHz sub-harmonic balanced HBT mixer with integrated miniature spiral type marchand balun

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    2013-01-01

    This work presents an active balanced sub-harmonic mixer (SHM) using InP double heterojunction bipolar transistor technology (DHBT) for Q-band applications. A miniature spiral type Marchand balun with five added capacitances for improved control of amplitude and phase balance is integrated...... the excellent balance of the integrated spiral type Marchand balun. The DC power consumption of the SHM is only 22.5 mW under normal mixer operation....

  7. Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application

    Science.gov (United States)

    Tsai, Jung-Hui

    2014-01-01

    DC performance of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors (DCFETs) grown on a low-cost GaAs substrate is first demonstrated. In the complementary DCFETs, the n-channel device was fabricated on the InxGa1-xP metamorphic linearly graded buffer layer and the p-channel field-effect transistor was stacked on the top of the n-channel device. Particularly, the saturation voltage of the n-channel device is substantially reduced to decrease the VOL and VIH values attributed that two-dimensional electron gas is formed and could be modulated in the n-InGaAs channel. Experimentally, a maximum extrinsic transconductance of 215 (17) mS/mm and a maximum saturation current density of 43 (-27) mA/mm are obtained in the n-channel (p-channel) device. Furthermore, the noise margins NMH and NML are up to 0.842 and 0.330 V at a supply voltage of 1.5 V in the complementary logic inverter application.

  8. Simulation of novel complementary bipolar inverters for low-voltage high-speed ULSI

    NARCIS (Netherlands)

    Bubennikov, AN; Zykov, AV

    2000-01-01

    Complementary bipolar (CBi) inverters on scaled down self-aligned transistors with highly-doped bases for advanced high-speed low-voltage low-power deep-submicron ULSI are considered and studied using a simulator PSPICE. A novel symmetrical transistor structure (STS) with undoped (lightly-doped) act

  9. Superconducting transistor

    Science.gov (United States)

    Gray, Kenneth E.

    1979-01-01

    A superconducting transistor is formed by disposing three thin films of superconducting material in a planar parallel arrangement and insulating the films from each other by layers of insulating oxides to form two tunnel junctions. One junction is biased above twice the superconducting energy gap and the other is biased at less than twice the superconducting energy gap. Injection of quasiparticles into the center film by one junction provides a current gain in the second junction.

  10. Cytokines in bipolar disorder vs. healthy control subjects

    DEFF Research Database (Denmark)

    Munkholm, Klaus; Braüner, Julie Vestergaard; Kessing, Lars Vedel

    2013-01-01

    Bipolar disorder may be associated with peripheral immune system dysfunction; however, results in individual studies are conflicting. Our aim was to systematically review evidence of peripheral cytokine alterations in bipolar disorder integrating findings from various affective states....

  11. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  12. Selective impairment of global motion integration, but not global form detection, in schizophrenia and bipolar affective disorder

    Directory of Open Access Journals (Sweden)

    Daniel Bennett

    2016-03-01

    Full Text Available Recent evidence suggests that schizophrenia is associated with impaired processing of global visual motion, but intact processing of global visual form. This project assessed whether preserved visual form detection in schizophrenia extended beyond low-level pattern discrimination to a naturalistic form-detection task. We assessed both naturalistic form detection and global motion detection in individuals with schizophrenia spectrum disorder, bipolar affective disorder, and healthy controls. Individuals with schizophrenia spectrum disorder and bipolar affective disorder were impaired relative to healthy controls on the global motion task, but not the naturalistic form-detection task. Results indicate that preservation of visual form detection in these disorders extends beyond configural forms to naturalistic object processing.

  13. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

    Institute of Scientific and Technical Information of China (English)

    LU Wu; ZHENG Yu-Zhan; WANG Yi-Yuan; REN Di-Yuan; GUO Qi; WANG Zhi-Kuan; WANG Jian-An

    2011-01-01

    The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types o

  14. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal.

    Science.gov (United States)

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-08-05

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature 'prototype' PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

  15. Analysis and design of 4H-SiC bipolar mode field effect power (BMFET)

    OpenAIRE

    2013-01-01

    2011 - 2012 Analysis and design of a new Silicon Carbide polytype 4H (4H-SiC) bipolar power transistor are the main topics of this Ph.D. thesis. The device is the Bipolar Mode Field Effect Transistor (BMFET) and exploits the electric field due to the channel punching-through in order to have a normally-off behavior and the minority carrier injection from the gate regions into the channel in order to obtain the channel conductivity modulation. The structure of the transistor is ...

  16. Neutrality in bipolar structures

    DEFF Research Database (Denmark)

    Montero, Javier; Rodríguez, J. Tinguaro; Franco, Camilo

    2014-01-01

    In this paper, we want to stress that bipolar knowledge representation naturally allows a family of middle states which define as a consequence different kinds of bipolar structures. These bipolar structures are deeply related to the three types of bipolarity introduced by Dubois and Prade, but our...... approach offers a systematic explanation of how such bipolar structures appear and can be identified....

  17. A radiation hard bipolar monolithic front-end readout

    CERN Document Server

    Baschirotto, A; Cappelluti, I; Castello, R; Cermesoni, M; Gola, A; Pessina, G; Pistolesi, E; Rancoita, P G; Seidman, A

    1999-01-01

    A fast bipolar monolithic charge sensitive preamplifier (CSP), implemented in the monolithic 2 mu m BiCMOS technology (called HF2CMOS) was designed and built in a quad monolithic chip. Studies of radiation effects in the CSP $9 performance, from non-irradiated and up to neutron irradiation of 5.3*10/sup 14/ n/cm/sup 2/, have confirmed that the use of bipolar npn transistors is suitable for the radiation level of the future LHC collider environment. The CSP $9 presents a new circuit solution for obtaining adequate slew rate performances which results in an integral linearity better than 0.8554330n 5 V at 20 ns of shaping time, regardless of the bias current selected for the CSP. This way $9 the bias current of the CSP can be set for optimizing the power dissipation with respect to series and parallel noise, especially useful when the CSP is put in a radiation environment. A prototype test with a novel monolithic 20 ns $9 time constant RC-CR shaper, capable to sum up four inputs has been also realized, featurin...

  18. CMOS Integrated Single Electron Transistor Electrometry (CMOS-SET) circuit design for nanosecond quantum-bit read-out.

    Energy Technology Data Exchange (ETDEWEB)

    Gurrieri, Thomas M.; Lilly, Michael Patrick; Carroll, Malcolm S.; Levy, James E.

    2008-08-01

    Novel single electron transistor (SET) read-out circuit designs are described. The circuits use a silicon SET interfaced to a CMOS voltage mode or current mode comparator to obtain a digital read-out of the state of the qubit. The design assumes standard submicron (0.35 um) CMOS SOI technology using room temperature SPICE models. Implications and uncertainties related to the temperature scaling of these models to 100mK operation are discussed. Using this technology, the simulations predict a read-out operation speed of approximately Ins and a power dissipation per cell as low as 2nW for single-shot read-out, which is a significant advantage over currently used radio frequency SET (RF-SET) approaches.

  19. Generation of short electrical pulses based on bipolar transistorsny

    Directory of Open Access Journals (Sweden)

    M. Gerding

    2004-01-01

    Full Text Available A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7V at 50Ω. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become forward biased. The resulting fast switch-off edge of the transistor’s output signal is the basis for the pulse generation. The fast switching of the transistor occurs as a result of the minority carriers that have been injected and stored across the base-collector junction under forward bias conditions. If the saturated transistor is suddenly reverse biased the pn-junction will appear as a low impedance until the stored charge is depleted. Then the impedance will suddenly increase to its normal high value and the flow of current through the junction will turn to zero, abruptly. A differentiation of the output signal of the transistor results in two short pulses with opposite polarities. The differentiating circuit is implemented by a transmission line network, which mainly acts as a high pass filter. Both the transistor technology (pnp or npn and the phase of the transfer function of the differentating circuit influence the polarity of the output pulses. The pulse duration depends on the transistor parameters as well as on the transfer function of the pulse shaping network. This way of generating short electrical pulses is a new alternative for conventional comb generators based on steprecovery diodes (SRD. Due to the three-terminal structure of the transistor the isolation problem between the input and the output signal of the transistor network is drastically simplified. Furthermore the transistor is an active element in contrast to a SRD, so that its current gain can be used to minimize the power of the driving signal.

  20. Ballistic Phosphorene Transistor

    Science.gov (United States)

    2015-11-19

    contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be...Thus, phosphorene can potentially overcome the challenges of all other 2D materials for ultra-scaled thin-body low-power transistor applications thereby...field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying

  1. Memristive device based on a depletion-type SONOS field effect transistor

    Science.gov (United States)

    Himmel, N.; Ziegler, M.; Mähne, H.; Thiem, S.; Winterfeld, H.; Kohlstedt, H.

    2017-06-01

    State-of-the-art SONOS (silicon-oxide-nitride-oxide-polysilicon) field effect transistors were operated in a memristive switching mode. The circuit design is a variation of the MemFlash concept and the particular properties of depletion type SONOS-transistors were taken into account. The transistor was externally wired with a resistively shunted pn-diode. Experimental current-voltage curves show analog bipolar switching characteristics within a bias voltage range of ±10 V, exhibiting a pronounced asymmetric hysteresis loop. The experimental data are confirmed by SPICE simulations. The underlying memristive mechanism is purely electronic, which eliminates an initial forming step of the as-fabricated cells. This fact, together with reasonable design flexibility, in particular to adjust the maximum R ON/R OFF ratio, makes these cells attractive for neuromorphic applications. The relative large set and reset voltage around ±10 V might be decreased by using thinner gate-oxides. The all-electric operation principle, in combination with an established silicon manufacturing process of SONOS devices at the Semiconductor Foundry X-FAB, promise reliable operation, low parameter spread and high integration density.

  2. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  3. Bipolar electrochemistry.

    Science.gov (United States)

    Fosdick, Stephen E; Knust, Kyle N; Scida, Karen; Crooks, Richard M

    2013-09-27

    A bipolar electrode (BPE) is an electrically conductive material that promotes electrochemical reactions at its extremities (poles) even in the absence of a direct ohmic contact. More specifically, when sufficient voltage is applied to an electrolyte solution in which a BPE is immersed, the potential difference between the BPE and the solution drives oxidation and reduction reactions. Because no direct electrical connection is required to activate redox reactions, large arrays of electrodes can be controlled with just a single DC power supply or even a battery. The wireless aspect of BPEs also makes it possible to electrosynthesize and screen novel materials for a wide variety of applications. Finally, bipolar electrochemistry enables mobile electrodes, dubbed microswimmers, that are able to move freely in solution. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Epilepsy and bipolar disorder.

    Science.gov (United States)

    Knott, Sarah; Forty, Liz; Craddock, Nick; Thomas, Rhys H

    2015-11-01

    It is well recognized that mood disorders and epilepsy commonly co-occur. Despite this, our knowledge regarding the relationship between epilepsy and bipolar disorder is limited. Several shared features between the two disorders, such as their episodic nature and potential to run a chronic course, and the efficacy of some antiepileptic medications in the prophylaxis of both disorders, are often cited as evidence of possible shared underlying pathophysiology. The present paper aims to review the bidirectional associations between epilepsy and bipolar disorder, with a focus on epidemiological links, evidence for shared etiology, and the impact of these disorders on both the individual and wider society. Better recognition and understanding of these two complex disorders, along with an integrated clinical approach, are crucial for improved evaluation and management of comorbid epilepsy and mood disorders.

  5. Transtorno bipolar

    Directory of Open Access Journals (Sweden)

    Alda Martin

    1999-01-01

    Full Text Available Os resultados de estudos de famílias sugerem que o transtorno bipolar tenha uma base genética. Essa hipótese foi reforçada em estudos de adoção e de gêmeos. A herança do transtorno bipolar é complexa, envolve vários genes, além de apresentar heterogeneidade e interação entre fatores genéticos e não-genéticos. Achados, que já foram replicados, já implicaram os cromossomos 4, 12, 18 e 21, entre outros, na busca por genes de suscetibilidade. Os resultados mais promissores foram obtidos através de estudos de ligação. Por outro lado, os estudos de associação geraram dados interessantes, mas ainda vagos. Os estudos de populações de pacientes homogêneos e a melhor definição do fenótipo deverão contribuir para avanços futuros. A identificação dos genes relacionados ao transtorno bipolar irá permitir o melhor entendimento e tratamento dessa doença.

  6. Sleep Disturbance and Cognitive Deficits in Bipolar Disorder: Toward An Integrated Examination of Disorder Maintenance and Functional Impairment

    Science.gov (United States)

    Boland, Elaine M.; Alloy, Lauren B.

    2012-01-01

    Bipolar disorder is frequently associated with a number of poor outcomes including, but not limited to, a significant impairment in the ability to return to premorbid levels of occupational and psychosocial functioning, often despite the remission of mood symptoms. Sleep disturbance is an oft-reported residual symptom of manic and depressive episodes that has likewise been associated with the onset of manic episodes. Also present during affective episodes as well as the inter-episode periods are reports of deficits in cognitive functioning, which many reports have shown to play an important role in this persistent disability. Despite the presence of deficits in these two domains of functioning during affective episodes as well as the inter-episode phase, there has been no evaluation of the degree to which these systems may interact to maintain such high rates of functional disability. The aim of this review is to examine evidence for the study of the relationship between sleep disturbance and cognitive impairments in bipolar disorder as well as the ways in which deficits in these domains may work together to maintain functional impairment. PMID:23123569

  7. Characterization of ionizing radiation effects in MOS structures by study of bipolar operation; Caracterisation des effets induits par irradiations ionisantes dans des structures MOS a partir de leur fonctionnement en regime bipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Bakhtiar, H. [Univ. Teknologi Malaysia, Dept. of Physics, Johor (Malaysia); Picard, C.; Brisset, C. [CEA Saclay, Lab. d' Electronique et de Technologie de l' Informatique, LETI, 91 - Gif-sur-Yvette (France); Bakhtiar, H.; Hoffmann, A.; Charles, J.P. [Metz Univ., LICM-CLOES-Supelec, 57 (France)

    1999-07-01

    This work presents an original method to characterize radiation effects of micronic transistors. The characterization includes a study of the transistor substrate-drain junction and current gain variation of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages. (author000.

  8. Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays.

    Science.gov (United States)

    Marette, Alexis; Poulin, Alexandre; Besse, Nadine; Rosset, Samuel; Briand, Danick; Shea, Herbert

    2017-08-01

    Flexible high-voltage thin-film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implements a zinc-tin oxide channel, a thick dielectric stack, and an offset gate. At a source-drain bias of 1 kV, the HVTFT has a 20 µA on-current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high-voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal-oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  10. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  11. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  12. Parasitic bipolar amplification in a single event transient and its temperature dependence

    Institute of Scientific and Technical Information of China (English)

    Liu Zheng; Chen Shu-Ming; Chen Jian-Jun; Qin Jun-Rui; Liu Rong-Rong

    2012-01-01

    Using three-dimensional technology computer-aided design (TCAD) simulation,parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied.We quantify the contributions of different current components in a SET current pulse,and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies.The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified.The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature,which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.

  13. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yiren; Song, Hang, E-mail: songh@ciomp.ac.cn, E-mail: lidb@ciomp.ac.cn; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing, E-mail: songh@ciomp.ac.cn, E-mail: lidb@ciomp.ac.cn; Miao, Guoqing [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2014-11-10

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  14. Organic and polymer transistors for electronics

    Directory of Open Access Journals (Sweden)

    Ananth Dodabalapur

    2006-04-01

    Full Text Available Some of the major application areas for organic and polymeric transistors are reviewed. Organic complementary devices are promising on account of their lower power dissipation and ease of circuit design. The first organic large-scale integrated circuits have been implemented with this circuit approach. Organic transistor backplanes are ideally suited for electronic paper applications and other display schemes. Low-cost and other processing advantages, as well as improving performance, have led to organic-based radio frequency identification tag development. The chemical interaction between various organic and polymer semiconductors can be exploited in chemical and biological sensors based upon organic transistors.

  15. STABILIZED TRANSISTOR AMPLIFIER

    Science.gov (United States)

    Noe, J.B.

    1963-05-01

    A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

  16. Immobilized rolling circle amplification on extended-gate field-effect transistors with integrated readout circuits for early detection of platelet-derived growth factor.

    Science.gov (United States)

    Lin, Ming-Yu; Hsu, Wen-Yang; Yang, Yuh-Shyong; Huang, Jo-Wen; Chung, Yueh-Lin; Chen, Hsin

    2016-07-01

    Detection of tumor-related proteins with high specificity and sensitivity is important for early diagnosis and prognosis of cancers. While protein sensors based on antibodies are not easy to keep for a long time, aptamers (single-stranded DNA) are found to be a good alternative for recognizing tumor-related protein specifically. This study investigates the feasibility of employing aptamers to recognize the platelet-derived growth factor (PDGF) specifically and subsequently triggering rolling circle amplification (RCA) of DNAs on extended-gate field-effect transistors (EGFETs) to enhance the sensitivity. The EGFETs are fabricated by the standard CMOS technology and integrated with readout circuits monolithically. The monolithic integration not only avoids the wiring complexity for a large sensor array but also enhances the sensor reliability and facilitates massive production for commercialization. With the RCA primers immobilized on the sensory surface, the protein signal is amplified as the elongation of DNA, allowing the EGFET to achieve a sensitivity of 8.8 pM, more than three orders better than that achieved by conventional EGFETs. Moreover, the responses of EGFETs are able to indicate quantitatively the reaction rates of RCA, facilitating the estimation on the protein concentration. Our experimental results demonstrate that immobilized RCA on EGFETs is a useful, label-free method for early diagnosis of diseases related to low-concentrated tumor makers (e.g., PDGF) for serum sample, as well as for monitoring the synthesis of various DNA nanostructures in real time. Graphical Abstract The tumor-related protein, PDGF, is detected by immobilizing rolling circle amplification on an EGFET with integrated readout circuit.

  17. Zapping thin film transistors

    NARCIS (Netherlands)

    Golo-Tosic, N.; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD

  18. Organic and polymer transistors for electronics

    OpenAIRE

    Ananth Dodabalapur

    2006-01-01

    Some of the major application areas for organic and polymeric transistors are reviewed. Organic complementary devices are promising on account of their lower power dissipation and ease of circuit design. The first organic large-scale integrated circuits have been implemented with this circuit approach. Organic transistor backplanes are ideally suited for electronic paper applications and other display schemes. Low-cost and other processing advantages, as well as improving performance, have le...

  19. Large-area, wafer-scale epitaxial growth of germanium on silicon and integration of high-performance transistors

    Science.gov (United States)

    Ghosh, Swapnadip

    simulation shows that the oval air gaps around the SiO2 template can reduce the thermal stress by 50% and help reduce the DD. We have then compared the structural and electrical characteristics of n-type Ge films with its p-type counter parts. In n-type Ge, the DD decreases from ˜109cm-2 near the Ge-Si interface to ˜105 cm-2 at the film surface. In contrast, we observe 5x107 cm-2 TDD at the film surface in p-type Ge. The full width at half-maximum for our n-type Ge(004) XRD peak is ~70% narrower than that of p-type Ge. As a stringent test of the dislocation reduction, we have also fabricated and characterized high-carrier-mobility MOSFETs on GoS substrates. We also report p- and n-MOSFETs with microeff of 401 and 940 cm2/V-s and a subthreshold slope of 100 and 200 mV/decade, respectively. These effective mobilities show an exceptional 82 and 30% improvement over that of conventional Si channel MOSFETs. We also investigate the optical quality of ultra-low DD GoS film by measuring photoluminescence (PL). The n-type Ge PL main peak shows pronounced tensile-strain (x0.8%) than that of p-type which is an indicator of direct BG shrinking at the \\Gcy band-edge. Going beyond epitaxial engineering and device fabrication, we have also recently demonstrated a scalable path to create a 2D array of Ge quantum dots (QDs) on responsive SiGe substrates based on elastic mechanical deformation and subsequent SiGe compositional redistribution, coupled with MBE growth. For large-scale manufacturing of single-electron transistors, we have also demonstrated that a spatially structured elastic compressive stress to the SiGe substrate with thermally annealing leads to a compositional redistribution of Si and Ge in the near-surface region of SiGe substrates, forming a 2D array of Ge-depleted nanoscale regions. Based on these latest findings, we have also begun to chart a future direction for my research group, where one can explore new advanced device architectures, such as Si

  20. SEMICONDUCTOR INTEGRATED CIRCUITS: An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process

    Science.gov (United States)

    Peijun, Gao; J, Oh N.; Hao, Min

    2009-08-01

    A differential LC voltage controlled oscillator (VCO) employing parasitic vertical-NPN (V-NPN) transistors as a negative gm-cell is presented to improve the close-in phase noise. The V-NPN transistors have lower flicker noise compared to MOS transistors. DC and AC characteristics of the V-NPN transistors are measured to facilitate the VCO design. The proposed VCO is implemented in a 0.18 μm CMOS RF/mixed signal process, and the measurement results show the close-in phase noise is improved by 3.5-9.1 dB from 100 Hz to 10 kHz offset compared to that of a similar CMOS VCO. The proposed VCO consumes only 0.41 mA from a 1.5 V power supply.

  1. Synergistic effect of mixed neutron and gamma irradiation in bipolar operational amplifier OP07

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Liu, E-mail: liuyan@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an 710024 (China); School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Chen; Shanchao, Yang; Xiaoming, Jin [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an 710024 (China); Chaohui, He [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China)

    2016-09-21

    This paper presents the synergistic effects in bipolar operational amplifier OP07. The radiation effects are studied by neutron beam, gamma ray, and mixed neutron/gamma ray environments. The characterateristics of the synergistic effects are studied through comparison of different experiment results. The results show that the bipolar operational amplifier OP07 exhibited significant synergistic effects in the mixed neutron and gamma irradiation. The bipolar transistor is identified as the most radiation sensitive unit of the operational amplifier. In this paper, a series of simulations are performed on bipolar transistors in different radiation environments. In the theoretical simulation, the geometric model and calculations based on the Medici toolkit are built to study the radiation effects in bipolar components. The effect of mixed neutron and gamma irradiation is simulated based on the understanding of the underlying mechanisms of radiation effects in bipolar transistors. The simulated results agree well with the experimental data. The results of the experiments and simulation indicate that the radiation effects in the bipolar devices subjected to mixed neutron and gamma environments is not a simple combination of total ionizing dose (TID) effects and displacement damage. The data suggests that the TID effect could enhance the displacement damage. The synergistic effect should not be neglected in complex radiation environments.

  2. 偏置条件对NPN型锗硅异质结双极晶体管电离辐射效应的影响%Bias effects on total ionizing dose radiation response of NPN silicon-germanium hetero-junction bipolar transistors

    Institute of Scientific and Technical Information of China (English)

    刘默寒; 陆妩; 马武英; 王信; 郭旗; 何承发; 姜柯

    2015-01-01

    Background: Silicon germanium hetero-junction bipolar transistors (SiGe HBTs) technology has been considered to be one of the promising candidate for future space applications due to its exciting built-in tolerance of total ionizing dose (TID) radiation and displacement damage (DD) performance.Purpose: The bias effects on total ionizing dose radiation response of the NPN commercial SiGe HBTs produced domestic were investigated with the 60Coγ ray under the different bias of Emitter-Base Junction. And the potential mechanisms of the different responses of the radiation under different bias are analyzed.Methods:The devices were mounted in the irradiation boards with different bias conditions during the irradiation and annealing process, and irradiated to a maximum total ionizing dose level of 11 kGy(Si). The electrical parameters including Gummel characteristics and direct current gain of the devices were measured with Keithley 4200-SCS Semiconductor Parameter Analyzer removed from the irradiation room within 20 min at room temperature before and after each specified value of accumulated dose.Results: The radiation sensitive electric parameters of the SiGe HBTs are base current and current gain. And, the damage of the devices with reverse bias is greater than that of zero bias, the degradation of the forward bias is the smallest.Conclusion: The difference of the radiation response under different bias conditions are due to the different amounts of the oxide and interface trap charge induced by the radiation under diverse electric field.%本文研究了不同偏置条件下国产商用NPN型锗硅异质结双极晶体管(Silicon germanium hetero-junction bipolar transistors, SiGe HBTs)在60Coγ辐射环境中电离辐照响应特性和变化规律。实验结果表明,在0.8 Gy(Si)·s−1剂量率辐照下,总累积剂量达到1.1×104 Gy(Si)时,发射结反向偏置条件下60Coγ射线辐照对SiGe HBTs造成的损伤最大,零偏次之,正偏损伤最小

  3. Bipolar disorder in adolescence.

    Science.gov (United States)

    DeFilippis, Melissa; Wagner, Karen Dineen

    2013-08-01

    Bipolar disorder is a serious psychiatric condition that may have onset in childhood. It is important for physicians to recognize the symptoms of bipolar disorder in children and adolescents in order to accurately diagnose this illness early in its course. Evidence regarding the efficacy of various treatments is necessary to guide the management of bipolar disorder in youth. For example, several medications commonly used for adults with bipolar disorder have not shown efficacy for children and adolescents with bipolar disorder. This article reviews the prevalence, diagnosis, course, and treatment of bipolar disorder in children and adolescents and provides physicians with information that will aid in diagnosis and treatment.

  4. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  5. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

    Institute of Scientific and Technical Information of China (English)

    LU Wu; ZHENG Yu-Zhan; WANG Yi-Yuan; REN Di-Yuan; GUO Qi; WANG Zhi-Kuan; WANG Jian-An

    2011-01-01

    The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with (111) orientation was more sensitive to ionizing radiation than that with (100) orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.

  6. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

    Science.gov (United States)

    Lu, Wu; Zheng, Yu-Zhan; Wang, Yi-Yuan; Ren, Di-Yuan; Guo, Qi; Wang, Zhi-Kuan; Wang, Jian-An

    2011-02-01

    The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with orientation was more sensitive to ionizing radiation than that with orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.

  7. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-09-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m.

  8. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction.

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-09-22

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm(2)) at 75.7 MV/m.

  9. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-01-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m. PMID:27654068

  10. Types of Bipolar Disorder

    Science.gov (United States)

    ... same time, which is also known as major depressive disorder with mixed features. Bipolar Disorder and Other Illnesses Some bipolar disorder symptoms are similar to other illnesses, which can make ...

  11. From Classical to Quantum Transistor

    Directory of Open Access Journals (Sweden)

    Sanjeev Kumar

    2009-05-01

    Full Text Available In this article the classical transistor and the basic physics underlying the operation of single electron transistor are presented; a brief history of transistor and current technological issues are discussed.

  12. From Classical to Quantum Transistor

    OpenAIRE

    Sanjeev Kumar

    2009-01-01

    In this article the classical transistor and the basic physics underlying the operation of single electron transistor are presented; a brief history of transistor and current technological issues are discussed.

  13. Integrating silicon nanowire field effect transistor, microfluidics and air sampling techniques for real-time monitoring biological aerosols.

    Science.gov (United States)

    Shen, Fangxia; Tan, Miaomiao; Wang, Zhenxing; Yao, Maosheng; Xu, Zhenqiang; Wu, Yan; Wang, Jindong; Guo, Xuefeng; Zhu, Tong

    2011-09-01

    Numerous threats from biological aerosol exposures, such as those from H1N1 influenza, SARS, bird flu, and bioterrorism activities necessitate the development of a real-time bioaerosol sensing system, which however is a long-standing challenge in the field. Here, we developed a real-time monitoring system for airborne influenza H3N2 viruses by integrating electronically addressable silicon nanowire (SiNW) sensor devices, microfluidics and bioaerosol-to-hydrosol air sampling techniques. When airborne influenza H3N2 virus samples were collected and delivered to antibody-modified SiNW devices, discrete nanowire conductance changes were observed within seconds. In contrast, the conductance levels remained relatively unchanged when indoor air or clean air samples were delivered. A 10-fold increase in virus concentration was found to give rise to about 20-30% increase in the sensor response. The selectivity of the sensing device was successfully demonstrated using H1N1 viruses and house dust allergens. From the simulated aerosol release to the detection, we observed a time scale of 1-2 min. Quantitative polymerase chain reaction (qPCR) tests revealed that higher virus concentrations in the air samples generally corresponded to higher conductance levels in the SiNW devices. In addition, the display of detection data on remote platforms such as cell phone and computer was also successfully demonstrated with a wireless module. The work here is expected to lead to innovative methods for biological aerosol monitoring, and further improvements in each of the integrated elements could extend the system to real world applications.

  14. Bipolar pulse forming line

    Science.gov (United States)

    Rhodes, Mark A.

    2008-10-21

    A bipolar pulse forming transmission line module for linear induction accelerators having first, second, third, fourth, and fifth planar conductors which form an interleaved stack with dielectric layers between the conductors. Each conductor has a first end, and a second end adjacent an acceleration axis. The first and second planar conductors are connected to each other at the second ends, the fourth and fifth planar conductors are connected to each other at the second ends, and the first and fifth planar conductors are connected to each other at the first ends via a shorting plate adjacent the first ends. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short a high voltage from the first end of the third planar conductor to the first end of the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

  15. Specifics of Pulsed Arc Welding Power Supply Performance Based On A Transistor Switch

    Science.gov (United States)

    Krampit, N. Yu; Kust, T. S.; Krampit, M. A.

    2016-08-01

    Specifics of designing a pulsed arc welding power supply device are presented in the paper. Electronic components for managing large current was analyzed. Strengths and shortcomings of power supply circuits based on thyristor, bipolar transistor and MOSFET are outlined. As a base unit for pulsed arc welding was chosen MOSFET transistor, which is easy to manage. Measures to protect a transistor are given. As for the transistor control device is a microcontroller Arduino which has a low cost and adequate performance of the work. Bead transfer principle is to change the voltage on the arc in the formation of beads on the wire end. Microcontroller controls transistor when the arc voltage reaches the threshold voltage. Thus there is a separation and transfer of beads without splashing. Control strategies tested on a real device and presented. The error in the operation of the device is less than 25 us, it can be used controlling drop transfer at high frequencies (up to 1300 Hz).

  16. Nutrition and Bipolar Depression.

    Science.gov (United States)

    Beyer, John L; Payne, Martha E

    2016-03-01

    As with physical conditions, bipolar disorder is likely to be impacted by diet and nutrition. Patients with bipolar disorder have been noted to have relatively unhealthy diets, which may in part be the reason they also have an elevated risk of metabolic syndrome and obesity. An improvement in the quality of the diet should improve a bipolar patient's overall health risk profile, but it may also improve their psychiatric outcomes. New insights into biological dysfunctions that may be present in bipolar disorder have presented new theoretic frameworks for understanding the relationship between diet and bipolar disorder.

  17. A spiking neuron circuit based on a carbon nanotube transistor.

    Science.gov (United States)

    Chen, C-L; Kim, K; Truong, Q; Shen, A; Li, Z; Chen, Y

    2012-07-11

    A spiking neuron circuit based on a carbon nanotube (CNT) transistor is presented in this paper. The spiking neuron circuit has a crossbar architecture in which the transistor gates are connected to its row electrodes and the transistor sources are connected to its column electrodes. An electrochemical cell is incorporated in the gate of the transistor by sandwiching a hydrogen-doped poly(ethylene glycol)methyl ether (PEG) electrolyte between the CNT channel and the top gate electrode. An input spike applied to the gate triggers a dynamic drift of the hydrogen ions in the PEG electrolyte, resulting in a post-synaptic current (PSC) through the CNT channel. Spikes input into the rows trigger PSCs through multiple CNT transistors, and PSCs cumulate in the columns and integrate into a 'soma' circuit to trigger output spikes based on an integrate-and-fire mechanism. The spiking neuron circuit can potentially emulate biological neuron networks and their intelligent functions.

  18. High-performance silicon nanowire bipolar phototransistors

    Science.gov (United States)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  19. Analysis and Design of a Gated Envelope Feedback Technique for Automatic Hardware Reconfiguration of RFIC Power Amplifiers, with Full On-Chip Implementation in Gallium Arsenide Heterojunction Bipolar Transistor Technology

    Science.gov (United States)

    Constantin, Nicolas Gerard David

    In this doctoral dissertation, the author presents the theoretical foundation, the analysis and design of analog and RF circuits, the chip level implementation, and the experimental validation pertaining to a new radio frequency integrated circuit (RFIC) power amplifier (PA) architecture that is intended for wireless portable transceivers. A method called Gated Envelope Feedback is proposed to allow the automatic hardware reconfiguration of a stand-alone RFIC PA in multiple states for power efficiency improvement purposes. The method uses self-operating and fully integrated circuitry comprising RF power detection, switching and sequential logic, and RF envelope feedback in conjunction with a hardware gating function for triggering and activating current reduction mechanisms as a function of the transmitted RF power level. Because of the critical role that RFIC PA components occupy in modern wireless transceivers, and given the major impact that these components have on the overall RF performances and energy consumption in wireless transceivers, very significant benefits stem from the underlying innovations. The method has been validated through the successful design of a 1.88GHz COMA RFIC PA with automatic hardware reconfiguration capability, using an industry renowned state-of-the-art GaAs HBT semiconductor process developed and owned by Skyworks Solutions, Inc., USA. The circuit techniques that have enabled the successful and full on-chip embodiment of the technique are analyzed in details. The IC implementation is discussed, and experimental results showing significant current reduction upon automatic hardware reconfiguration, gain regulation performances, and compliance with the stringent linearity requirements for COMA transmission demonstrate that the gated envelope feedback method is a viable and promising approach to automatic hardware reconfiguration of RFIC PA's for current reduction purposes. Moreover, in regard to on-chip integration of advanced PA

  20. Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

    Science.gov (United States)

    Frenzel, Heiko; Lajn, Alexander; von Wenckstern, Holger; Lorenz, Michael; Schein, Friedrich; Zhang, Zhipeng; Grundmann, Marius

    2010-12-14

    Metal-semiconductor field-effect transistors (MESFETs) are widely known from opaque high-speed GaAs or high-power SiC and GaN technology. For the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. This article reviews the progress of high-performance MESFETs in oxide electronics and reflects the recent advances of this technique towards transparent MESFET circuitry. We discuss design prospects as well as limitations regarding device performance, reliability and stability. The presented ZnO-based MESFETs and inverters have superior properties compared to MISFETs, i.e., high channel mobilities and on/off-ratios, high gain, and low uncertainty level at comparatively low operating voltages. This makes them a promising approach for future low-cost transparent electronics.

  1. The International Society for Bipolar Disorders (ISBD) Task Force Report on Antidepressant Use in Bipolar Disorders

    Science.gov (United States)

    Pacchiarotti, Isabella; Bond, David J.; Baldessarini, Ross J.; Nolen, Willem A.; Grunze, Heinz; Licht, Rasmus W.; Post, Robert M.; Berk, Michael; Goodwin, Guy M.; Sachs, Gary S.; Tondo, Leonardo; Findling, Robert L.; Youngstrom, Eric A.; Tohen, Mauricio; Undurraga, Juan; González-Pinto, Ana; Goldberg, Joseph F.; Yildiz, Ayşegül; Altshuler, Lori L.; Calabrese, Joseph R.; Mitchell, Philip B.; Thase, Michael E.; Koukopoulos, Athanasios; Colom, Francesc; Frye, Mark A.; Malhi, Gin S.; Fountoulakis, Konstantinos N.; Vázquez, Gustavo; Perlis, Roy H.; Ketter, Terence A.; Cassidy, Frederick; Akiskal, Hagop; Azorin, Jean-Michel; Valentí, Marc; Mazzei, Diego Hidalgo; Lafer, Beny; Kato, Tadafumi; Mazzarini, Lorenzo; Martínez-Aran, Anabel; Parker, Gordon; Souery, Daniel; Özerdem, Ayşegül; McElroy, Susan L.; Girardi, Paolo; Bauer, Michael; Yatham, Lakshmi N.; Zarate, Carlos A.; Nierenberg, Andrew A.; Birmaher, Boris; Kanba, Shigenobu; El-Mallakh, Rif S.; Serretti, Alessandro; Rihmer, Zoltan; Young, Allan H.; Kotzalidis, Georgios D.; MacQueen, Glenda M.; Bowden, Charles L.; Ghaemi, S. Nassir; Lopez-Jaramillo, Carlos; Rybakowski, Janusz; Ha, Kyooseob; Perugi, Giulio; Kasper, Siegfried; Amsterdam, Jay D.; Hirschfeld, Robert M.; Kapczinski, Flávio; Vieta, Eduard

    2014-01-01

    Objective The risk-benefit profile of antidepressant medications in bipolar disorder is controversial. When conclusive evidence is lacking, expert consensus can guide treatment decisions. The International Society for Bipolar Disorders (ISBD) convened a task force to seek consensus recommendations on the use of antidepressants in bipolar disorders. Method An expert task force iteratively developed consensus through serial consensus-based revisions using the Delphi method. Initial survey items were based on systematic review of the literature. Subsequent surveys included new or reworded items and items that needed to be rerated. This process resulted in the final ISBD Task Force clinical recommendations on antidepressant use in bipolar disorder. Results There is striking incongruity between the wide use of and the weak evidence base for the efficacy and safety of antidepressant drugs in bipolar disorder. Few well-designed, long-term trials of prophylactic benefits have been conducted, and there is insufficient evidence for treatment benefits with antidepressants combined with mood stabilizers. A major concern is the risk for mood switch to hypomania, mania, and mixed states. Integrating the evidence and the experience of the task force members, a consensus was reached on 12 statements on the use of antidepressants in bipolar disorder. Conclusions Because of limited data, the task force could not make broad statements endorsing antidepressant use but acknowledged that individual bipolar patients may benefit from antidepressants. Regarding safety, serotonin reuptake inhibitors and bupropion may have lower rates of manic switch than tricyclic and tetracyclic antidepressants and norepinephrine-serotonin reuptake inhibitors. The frequency and severity of antidepressant-associated mood elevations appear to be greater in bipolar I than bipolar II disorder. Hence, in bipolar I patients antidepressants should be prescribed only as an adjunct to mood-stabilizing medications

  2. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    Science.gov (United States)

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors.

  3. Neuroinflammation in bipolar disorders

    OpenAIRE

    Georgios D. Kotzalidis; Elisa Ambrosi; Alessio Simonetti; Ilaria Cuomo; Antonio Del Casale; Matteo Caloro; Valeria Savoja; Chiara Rapinesi

    2015-01-01

    Recent literature based on peripheral immunity findings speculated that neuroinflammation, with its connection to microglial activation, is linked to bipolar disorder. The endorsement of the neuroinflammatory hypotheses of bipolar disorder requires the demonstration of causality, which requires longitudinal studies. We aimed to review the evidence for neuroinflammation as a pathogenic mechanism of the bipolar disorder. We carried out a hyper inclusive PubMed search using all appropriate neuro...

  4. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  5. Going ballistic: Graphene hot electron transistors

    Science.gov (United States)

    Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.

    2015-12-01

    This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

  6. Unsplit bipolar pulse forming line

    Science.gov (United States)

    Rhodes, Mark A.

    2011-05-24

    A bipolar pulse forming transmission line module and system for linear induction accelerators having first, second, third, and fourth planar conductors which form a sequentially arranged interleaved stack having opposing first and second ends, with dielectric layers between the conductors. The first and second planar conductors are connected to each other at the first end, and the first and fourth planar conductors are connected to each other at the second end via a shorting plate. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short at the first end a high voltage from the third planar conductor to the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

  7. Neuroimaging in Bipolar Disorder

    Directory of Open Access Journals (Sweden)

    Kemal Kara

    2013-03-01

    Full Text Available Bipolar disorder is characterized by recurrent attacks, significantly disrupts the functionality of a chronic mental disorder. Although there is growing number of studies on the neurobiological basis of the disorder, the pathophysiology has not yet been clearly understood. Structural and functional imaging techniques present a better understanding of the etiology of bipolar disorder and has contributed significantly to the development of the diagnostic approach. Recent developments in brain imaging modalities have let us learn more about the underlying abnormalities in neural systems of bipolar patients. Identification of objective biomarkers would help to determine the pathophysiology of bipolar disorder, a disorder which causes significant deterioration in neurocognitive and emotional areas.

  8. Report on the results of research and development under a consignment from NEDO on deca-nano quantum integrating transistor substrate technologies; 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo Shin energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku. Deca-nano ryoshi shusekika soshi kiban gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Researches have been conducted on deca-nano quantum integrating transistor substrate technologies, and developments were made on a three-dimensional device simulator which can be used in deca-nano domains, and a circuit simulator to have quantifying function transistors coexist with silicon semiconductor integrated circuits. The researches were intended to develop a simulator capable of analyzing properties of very small silicon and compound semiconductor devices in deca-nano domains. The researches discussed the applicability of conventional simulators, calculated quantum levels in a three-dimensional hetero structure, and resulted in development of an electron wave propagation simulator in optional two-dimensional shapes, a quantum Monte Carlo simulator, and a three-dimensional semiconductor device simulator with quantum correction. On the other hand, in order to estimate characteristics of a hybrid circuit in which single electron transistors coexist with conventional transistors such as CMOS transistors, a single electron hybrid circuit simulator was developed. The development indicated that a CMOS-SET fused memory is promising as a future LSI memory. 22 refs., 116 figs., 3 tabs.

  9. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  10. High Power Switching Transistor

    Science.gov (United States)

    Hower, P. L.; Kao, Y. C.; Carnahan, D. C.

    1983-01-01

    Improved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.

  11. Graphene transistors for bioelectronics

    OpenAIRE

    Hess, Lucas H.; Seifert, Max; Garrido, Jose A.

    2013-01-01

    This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect to competing technologies. To obtain a better understanding of the working principle of solution-gated transistors, the graphene-electrolyte interface is discussed in detail. The in-vitro biocompatibility of graphene is assessed by primary neuron cultures....

  12. Transistor-based interface circuitry

    Science.gov (United States)

    Taubman, Matthew S.

    2007-02-13

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  13. Study of improved reverse recovery in power transistor incorporating universal contact

    Science.gov (United States)

    Anand, R. S.; Mazhari, B.; Narain, J.

    2004-05-01

    The improvement in reverse recovery of power NPN bipolar transistor (BJT) through incorporation of "universal contact" in the base is studied in detail. It is shown that use of universal contact allows redistribution of base current in saturation from collector region where recombination lifetime is high to extrinsic base region where effective recombination lifetime is low. The reverse recovery time decreases as collector current density increases but increases as collector breakdown voltage increases. The improvement in reverse recovery is accompanied with an increase in collector-emitter voltage in the ON state. For low voltage transistors and high voltage transistors at low collector current densities, the increase is primarily due to reduction in reverse current gain. For high breakdown voltage transistors, the use of universal contact results in early onset of quasi-saturation effect and results in degradation in ON state voltage at high collector current densities.

  14. Fabrication of a Silicon MOSFET Device with Bipolar Transistor Source,

    Science.gov (United States)

    1980-07-01

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  15. Properties of Bipolar Fuzzy Hypergraphs

    OpenAIRE

    M. Akram; Dudek, W. A.; Sarwar, S.

    2013-01-01

    In this article, we apply the concept of bipolar fuzzy sets to hypergraphs and investigate some properties of bipolar fuzzy hypergraphs. We introduce the notion of $A-$ tempered bipolar fuzzy hypergraphs and present some of their properties. We also present application examples of bipolar fuzzy hypergraphs.

  16. Bipolar Disorder in Children

    Directory of Open Access Journals (Sweden)

    Kimberly Renk

    2014-01-01

    Full Text Available Although bipolar disorder historically was thought to only occur rarely in children and adolescents, there has been a significant increase in children and adolescents who are receiving this diagnosis more recently (Carlson, 2005. Nonetheless, the applicability of the current bipolar disorder diagnostic criteria for children, particularly preschool children, remains unclear, even though much work has been focused on this area. As a result, more work needs to be done to further the understanding of bipolar symptoms in children. It is hoped that this paper can assist psychologists and other health service providers in gleaning a snapshot of the literature in this area so that they can gain an understanding of the diagnostic criteria and other behaviors that may be relevant and be informed about potential approaches for assessment and treatment with children who meet bipolar disorder criteria. First, the history of bipolar symptoms and current diagnostic criteria will be discussed. Next, assessment strategies that may prove helpful for identifying bipolar disorder will be discussed. Then, treatments that may have relevance to children and their families will be discussed. Finally, conclusions regarding work with children who may have a bipolar disorder diagnosis will be offered.

  17. Bipolar Disorder in Children

    Science.gov (United States)

    2014-01-01

    Although bipolar disorder historically was thought to only occur rarely in children and adolescents, there has been a significant increase in children and adolescents who are receiving this diagnosis more recently (Carlson, 2005). Nonetheless, the applicability of the current bipolar disorder diagnostic criteria for children, particularly preschool children, remains unclear, even though much work has been focused on this area. As a result, more work needs to be done to further the understanding of bipolar symptoms in children. It is hoped that this paper can assist psychologists and other health service providers in gleaning a snapshot of the literature in this area so that they can gain an understanding of the diagnostic criteria and other behaviors that may be relevant and be informed about potential approaches for assessment and treatment with children who meet bipolar disorder criteria. First, the history of bipolar symptoms and current diagnostic criteria will be discussed. Next, assessment strategies that may prove helpful for identifying bipolar disorder will be discussed. Then, treatments that may have relevance to children and their families will be discussed. Finally, conclusions regarding work with children who may have a bipolar disorder diagnosis will be offered. PMID:24800202

  18. Neuroinflammation in bipolar disorders

    Directory of Open Access Journals (Sweden)

    Georgios D Kotzalidis

    2015-01-01

    Full Text Available Recent literature based on peripheral immunity findings speculated that neuroinflammation, with its connection to microglial activation, is linked to bipolar disorder. The endorsement of the neuroinflammatory hypotheses of bipolar disorder requires the demonstration of causality, which requires longitudinal studies. We aimed to review the evidence for neuroinflammation as a pathogenic mechanism of the bipolar disorder. We carried out a hyper inclusive PubMed search using all appropriate neuroinflammation-related terms and crossed them with bipolar disorder-related terms. The search produced 310 articles and the number rose to 350 after adding articles from other search engines and reference lists. Twenty papers were included that appropriately tackled the issue of the presence (but not of its pathophysiological role of neuroinflammation in bipolar disorder. Of these, 15 were postmortem and 5 were carried out in living humans. Most articles were consistent with the presence of neuroinflammation in bipolar disorder, but factors such as treatment may mask it. All studies were cross-sectional, preventing causality to be inferred. Thus, no inference can be currently made about the role of neuroinflammation in bipolar disorder, but a link is likely. The issue remains little investigated, despite an excess of reviews on this topic.

  19. Bipolarity and the relational division

    OpenAIRE

    Tamani, Nouredine; Lietard, Ludovic; Rocacher, Daniel

    2011-01-01

    International audience; A fuzzy bipolar relation is a relation defined by a fuzzy bipolar condition, which could be interpreted as an association of a constraint and a wish. In this context, the extension of the relational division operation to bipolarity is studied in this paper. Firstly, we define a bipolar division when the involved relations are crisp. Then, we define, from the semantic point of view, several forms of bipolar division when the involved relations are defined by fuzzy bipol...

  20. Bipolar disorder and aggression.

    Science.gov (United States)

    Látalová, K

    2009-06-01

    In clinical practice, overt aggressive behaviour is frequently observed in patients diagnosed with bipolar disorder. It can be dangerous and complicates patient care. Nevertheless, it has not been adequately studied as a phenomenon that is separate from other symptoms such as agitation. The aim of this review is to provide information on the prevalence, clinical context, and clinical management of aggression in patients with bipolar disorder. MEDLINE and PsycInfo data bases were searched for articles published between 1966 and November 2008 using the combination of key words 'aggression' or 'violence' with 'bipolar disorder'. For the treatment searches, generic names of mood stabilisers and antipsychotics were used in combination with key words 'bipolar disorder' and 'aggression'. No language constraint was applied. Articles dealing with children and adolescents were not included. Acutely ill hospitalised bipolar patients have a higher risk for aggression than other inpatients. In a population survey, the prevalence of aggressive behaviour after age 15 years was 0.66% in persons without lifetime psychiatric disorder, but 25.34% in bipolar I disorder. Comorbidity with personality disorders and substance use disorders is frequent, and it elevates the risk of aggression in bipolar patients. Impulsive aggression appears to be the most frequent subtype observed in bipolar patients. Clinical management of aggression combines pharmacological and non-pharmacological approaches. A major problem with the evidence is that aggression is frequently reported only as one of the items contributing to the total score on a scale or a subscale. This makes it impossible to ascertain specifically aggressive behaviour. Large controlled head-to-head randomised controlled studies comparing treatments for aggressive behaviour in bipolar disorder are not yet available. There is some evidence favouring divalproex, but it is not particularly strong .We do not know if there are any efficacy

  1. Optimisation of add-on NPN Transistor for a CMOS Process

    Science.gov (United States)

    Aurola, Artto; Ronkainen, Hannu; Mellin, Joni

    2004-01-01

    The objective of this research was to add an npn-bipolar transistor for a CMOS process. This was to be done with minimal additional process steps and without changing any existing CMOS parameters. The minimum line width of the process was 1.2µm, the wafers were p-type and 100mm in diameter and no epitaxial or polysilicon layers were used. To minimise the additional process steps a triple diffused transistor was selected as the basis of the research. The emitter was formed from a diffusion contacting NMOSFET source and drain to aluminium. As collector diffusion two approaches were investigated the pnpbipolar transistors isolation nwell and the PMOSFET n-well. The only additional step to the CMOS process due to the npn-transistor fabrication resulted from the formation of base diffusion. The specifications for the npn-transistor were 80 for the current gain, 100V for the early voltage and 60MHz for the transition frequency at 1µA collector current. Four different transistor structures were investigated two octagonal transistors having either emitter or base in the centre and two minimum area rectangular transistors having either base or emitter in the middle. The octagonal transistor having the emitter in the centre was chosen as the basis of simulations. It was first simulated with a device simulator. Next combined process and device simulations were done. Based on simulation results different processes were tested on wafers. Only the octagonal transistor having the emitter in the middle satisfied the specifications when a pnp isolation n-well was used as a collector.

  2. High current gain silicon-based spin transistor

    CERN Document Server

    Dennis, C L; Ensell, G J; Gregg, J F; Thompson, S M

    2003-01-01

    A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then tunnel-collecting them via a ferromagnetic collector. The switching of the magnetic state of the collector ferromagnet controls the collector efficiency and the current gain. Furthermore, the magnetocurrent, which is determined to be 98% (140%) for p-type (n-type) in -110 Oe, is attributable to the spin-polarized base diffusion current.

  3. Bipolar disorder (image)

    Science.gov (United States)

    Bipolar disorder is a mood disorder characterized by episodes of mania and major depression. Treatment with lithium or mood stabilizers may be effective, but medication regimens are sometimes difficult to tolerate and maintain, ...

  4. The Development of CMOS Technology in NPN Bipolar%CMOS工艺中NPN bipolar的开发

    Institute of Scientific and Technical Information of China (English)

    崔金洪

    2014-01-01

    Due to the rapid development of growth and breakthrough technology, the manufacture of integrated circuits in a short span of 60 years, single grain can accommodate tens of millions of transistors ultra large integrated circuit, and the main process of the CMOS process, because it has low power consumption, integration high, low noise, the advantages of strong ability of resisting radiation, but the traditional bipolar technology has the advantages of high frequency, power, so want to integration in the CMOS tube triode, diode. The paper discusses the method of integration of NPN bipolar in 0.5 μm CMOS process, the shutdown technology index.%由于技术的迅速发展与突破,使集成电路的制造得以在短短的60年间,单一晶粒已经可以容纳数千万个电晶体的超大型集成电路。其主要工艺为CMOS工艺,原因是它有功耗低、集成度高、噪声低、抗辐射能力强等优点,但是传统bipolar工艺有频率高、功率大的优点,因此提出在CMOS中集成三极管、二极管。论述了在0.5μm CMOS工艺中集成NPN bipolar的方法以及各个关键技术指标的确定。

  5. Effect of 100MeV oxygen ion irradiation on silicon NPN power transistor

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, M. Vinay; Krishnakumar, K. S.; Dinesh, C. M.; Krishnaveni, S.; Ramani [Department of studies in Physics, University of Mysore, Mysore (India); Department of Physics, APS College, Bengaluru (India); Department of Physics, DCE, Govt. First Grade College, Mangalore (India); Department of studies in Physics, University of Mysore, Mysore (India); Department of Physics, Bangalore University, Bengaluru (India)

    2012-06-05

    The radiation response of npn Bipolar junction transistor (BJT) has been examined for 100 MeV O{sup 7+} ion. Key electrical properties like Gummel characteristics, dc current gain and capacitance-voltage of 100MeV O{sup 7+} ion irradiated transistor were studied before and after irradiation. The device was decapped and the electrical characterizations were performed at room temperature. Base current is observed to be more sensitive than collector current and gain appears to be degraded with ion fluence, also considerable degradation in C-V characteristics is observed and doping concentration is found to be increased along with the increase in ion fluence.

  6. Effect of 100MeV oxygen ion irradiation on silicon NPN power transistor

    Science.gov (United States)

    Kumar, M. Vinay; Krishnakumar, K. S.; Dinesh, C. M.; Krishnaveni, S.; Ramani

    2012-06-01

    The radiation response of npn Bipolar junction transistor (BJT) has been examined for 100 MeV O7+ ion. Key electrical properties like Gummel characteristics, dc current gain and capacitance-voltage of 100MeV O7+ ion irradiated transistor were studied before and after irradiation. The device was decapped and the electrical characterizations were performed at room temperature. Base current is observed to be more sensitive than collector current and gain appears to be degraded with ion fluence, also considerable degradation in C-V characteristics is observed and doping concentration is found to be increased along with the increase in ion fluence.

  7. Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May

    2016-04-01

    For the development of a metal-interconnection-free integration scheme for monolithic integration of InGaN/GaN light-emitting diodes (LEDs) and AlGaN/GaN high-electron-mobility transistors (HEMTs), a common buffer to achieve high brightness, low leakage current, and high breakdown in the integrated HEMT-LED device is essential. Different buffer structures have been investigated, and their impacts upon both the LED and HEMT parts of the HEMT-LED device have been analyzed. Results indicated that a GaN/AlN buffer structure is the most ideal to serve as a common buffer platform, offering both the excellent crystalline quality and superior buffer resistivity required by the HEMT-LED device. Growth of the AlN layer was particularly crucial for engineering the dislocation density, surface morphology, as well as resistivity of the buffer layer. Using the optimized GaN/AlN buffer structure, the LED part of the HEMT-LED device was improved, showing greatly enhanced light output power and suppressed reverse leakage current, while the breakdown characteristics of the HEMT part were also improved.

  8. Accelerating the life of transistors

    Science.gov (United States)

    Haochun, Qi; Changzhi, Lü; Xiaoling, Zhang; Xuesong, Xie

    2013-06-01

    Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object, the test of accelerating life is conducted in constant temperature and humidity, and then the data are statistically analyzed with software developed by ourselves. According to degradations of such sensitive parameters as the reverse leakage current of transistors, the lifetime order of transistors is about more than 104 at 100 °C and 100% relative humidity (RH) conditions. By corrosion fracture of transistor outer leads and other failure modes, with the failure truncated testing, the average lifetime rank of transistors in different distributions is extrapolated about 103. Failure mechanism analyses of degradation of electrical parameters, outer lead fracture and other reasons that affect transistor lifetime are conducted. The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation.

  9. Accelerating the life of transistors

    Institute of Scientific and Technical Information of China (English)

    Qi Haochun; Lü Changzhi; Zhang Xiaoling; Xie Xuesong

    2013-01-01

    Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object,the test of accelerating life is conducted in constant temperature and humidity,and then the data are statistically analyzed with software developed by ourselves.According to degradations of such sensitive parameters as the reverse leakage current of transistors,the lifetime order of transistors is about more than 104 at 100 ℃ and 100% relative humidity (RH) conditions.By corrosion fracture of transistor outer leads and other failure modes,with the failure truncated testing,the average lifetime rank of transistors in different distributions is extrapolated about 103.Failure mechanism analyses of degradation of electrical parameters,outer lead fracture and other reasons that affect transistor lifetime are conducted.The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation.

  10. Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics.

    Science.gov (United States)

    Torricelli, Fabrizio; Ghittorelli, Matteo; Smits, Edsger C P; Roelofs, Christian W S; Janssen, René A J; Gelinck, Gerwin H; Kovács-Vajna, Zsolt M; Cantatore, Eugenio

    2016-01-13

    Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10(5) are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories.

  11. Experimental characterization of the dominant multiple nodes charge collection mechanism in metal oxide-semiconductor transistors

    Science.gov (United States)

    Song, Ruiqiang; Chen, Shuming; Chi, Yaqing; Wu, Zhenyu; Liang, Bin; Chen, Jianjun; Xu, Jingyan; Hao, Peipei; Yu, Junting

    2017-06-01

    We propose an experimental method to investigate the dominant multiple node charge collection mechanism. A transistor array-based test structure is used to distinguish charge collection owing to the drift-diffusion and parasitic bipolar amplification effect. Heavy ion experimental results confirm that drift-diffusion dominates multiple node charge collection at low linear energy transfer (LET). However, the parasitic bipolar amplification effect dominates it at high LET. We also propose simple equations to determine the critical LET which may change the dominant multiple node charge collection mechanism. The calculated LET value is consistent with the heavy ion experimental results.

  12. Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

    Science.gov (United States)

    Kazior, Thomas E

    2014-03-28

    Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

  13. Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

    Science.gov (United States)

    Kazior, Thomas E.

    2014-01-01

    Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

  14. A Matterwave Transistor Oscillator

    CERN Document Server

    Caliga, Seth C; Zozulya, Alex A; Anderson, Dana Z

    2012-01-01

    A triple-well atomtronic transistor combined with forced RF evaporation is used to realize a driven matterwave oscillator circuit. The transistor is implemented using a metalized compound glass and silicon substrate. On-chip and external currents produce a cigar-shaped magnetic trap, which is divided into transistor source, gate, and drain regions by a pair of blue-detuned optical barriers projected onto the magnetic trap through a chip window. A resonant laser beam illuminating the drain portion of the atomtronic transistor couples atoms emitted by the gate to the vacuum. The circuit operates by loading the source with cold atoms and utilizing forced evaporation as a power supply that produces a positive chemical potential in the source, which subsequently drives oscillation. High-resolution in-trap absorption imagery reveals gate atoms that have tunneled from the source and establishes that the circuit emits a nominally mono-energetic matterwave with a frequency of 23.5(1.0) kHz by tunneling from the gate, ...

  15. Towards the ultimate transistor

    Science.gov (United States)

    Natelson, Douglas

    2009-06-01

    The first transistor, made more than 60 years ago at Bell Labs, was a couple of inches across. Today, a typical laptop computer uses a processor chip that contains well over a billion transistors, each one with electrodes separated by less than 50 nm of silicon, which is less than a thousandth of the diameter of a human hair. This continual drive for miniaturization, with the density of transistors doubling roughly every two years, was first noted by Intel co-founder Gordon Moore in 1965, and has been such a mainstay of electronics development that it is now enshrined as "Moore's law". These billions of transistors are made by "top down" methods that involve depositing thin layers of materials, patterning nano-scale stencils and effectively carving away the unwanted bits. The incredible success of this approach is almost impossible to overstate. The end result is billions of individual components on a single chip, essentially all working perfectly and continuously for years on end. No other manufactured technology comes remotely close in reliability or cost-per-widget.

  16. Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution

    Science.gov (United States)

    Rahaman, Sk. Ziaur; Lee, Heng-Yuan; Chen, Yu-Sheng; Lin, Yu-De; Chen, Pang-Shiu; Chen, Wei-Su; Wang, Pei-Hua

    2017-05-01

    Scalability and reliability issues are the most dominant obstacle for the development of resistive switching memory (RRAM) technology. Owing to the excellent memory performance and process compatibility with current CMOS technology of Ti/HfOx-based filamentary type bipolar RRAM, its scalability and reliability issues have been investigated in this document. Towards this goal, we demonstrate that there exists a clear correlation between the transistor and memory cell, which ultimately limits the scaling in terms of operation current and size of the transistor as well and performance of the Ti/HfOx-based 1T1R bipolar RRAM. Due to the resemblance of switching behaviour between complementary resistive switching, i.e., CRS in a single memory stack, and bipolar resistive switching, the Ti/HfOx-based bipolar RRAM suffers from resistance pinning (RP) issues, whereas the minimum resistance during the 1st RESET operation always impeded below 20 kΩ; this occurs through the interaction between the transistor and memory cell during the FORMING process. However, a sufficiently lower FORMING voltage can mitigate the RP issue occurring in Ti/HfOx-based bipolar RRAM and an alternative Ta buffer layer over HfOx dielectrics is proposed to prevent the activation of self-CRS in the memory cell during the FORMING process.

  17. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  18. 4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In-Ga-Zn-Oxide Thin-Film Transistors with Suppressed Variation

    Science.gov (United States)

    Ohara, Hiroki; Sasaki, Toshinari; Noda, Kousei; Ito, Shunichi; Sasaki, Miyuki; Endo, Yuta; Yoshitomi, Shuhei; Sakata, Junichiro; Serikawa, Tadashi; Yamazaki, Shunpei

    2010-03-01

    We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In-Ga-Zn-oxide (IGZO) thin-film transistors (TFTs). Focusing on a passivation layer in an inverted staggered bottom gate structure, the threshold voltage of the TFTs can be controlled to have “normally-off” characteristics with suppressed variation by using a SiOx layer formed by sputtering with a low hydrogen content. In addition, small subthreshold swing S/S of 0.19 V/decade, high field-effect mobility µFE of 11.5 cm2 V-1 s-1, and threshold voltage Vth of 1.27 V are achieved. The deposition conditions of the passivation layer and other processes are optimized, and variation in TFT characteristics is suppressed, whereby high-speed operation in gate and source driver circuits can be achieved. Using these driver circuits, the 4.0-in. QVGA AMOLED display integrated with driver circuits can be realized.

  19. Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cirba, C.R.; Fleetwood, D.M.; Graves, R.J.; Michez, A.; Milanowski, R.J.; Saigne, F.; Schrimpf, R.D.; Witczak, S.C.

    1998-10-26

    A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts at lower dose rates. The additional trapped charge near the interface may cause an exponential increase in excess base current, and a resultant decrease in current gain for some NPN bipolar technologies.

  20. Bipolar Affective Disorder and Migraine

    Directory of Open Access Journals (Sweden)

    Birk Engmann

    2012-01-01

    Full Text Available This paper consists of a case history and an overview of the relationship, aetiology, and treatment of comorbid bipolar disorder migraine patients. A MEDLINE literature search was used. Terms for the search were bipolar disorder bipolar depression, mania, migraine, mood stabilizer. Bipolar disorder and migraine cooccur at a relatively high rate. Bipolar II patients seem to have a higher risk of comorbid migraine than bipolar I patients have. The literature on the common roots of migraine and bipolar disorder, including both genetic and neuropathological approaches, is broadly discussed. Moreover, bipolar disorder and migraine are often combined with a variety of other affective disorders, and, furthermore, behavioural factors also play a role in the origin and course of the diseases. Approach to treatment options is also difficult. Several papers point out possible remedies, for example, valproate, topiramate, which acts on both diseases, but no first-choice treatments have been agreed upon yet.

  1. Lightweight bipolar storage battery

    Science.gov (United States)

    Rowlette, John J. (Inventor)

    1992-01-01

    An apparatus [10] is disclosed for a lightweight bipolar battery of the end-plate cell stack design. Current flow through a bipolar cell stack [12] is collected by a pair of copper end-plates [16a,16b] and transferred edgewise out of the battery by a pair of lightweight, low resistance copper terminals [28a,28b]. The copper terminals parallel the surface of a corresponding copper end-plate [16a,16b] to maximize battery throughput. The bipolar cell stack [12], copper end-plates [16a,16b] and copper terminals [28a,28b] are rigidly sandwiched between a pair of nonconductive rigid end-plates [20] having a lightweight fiber honeycomb core which eliminates distortion of individual plates within the bipolar cell stack due to internal pressures. Insulating foam [30] is injected into the fiber honeycomb core to reduce heat transfer into and out of the bipolar cell stack and to maintain uniform cell performance. A sealed battery enclosure [ 22] exposes a pair of terminal ends [26a,26b] for connection with an external circuit.

  2. Childhood trauma in bipolar disorder.

    OpenAIRE

    Watson, S; Gallagher, P.; Dougall, D.; Porter, R.; Moncrieff, J; Ferrier, I N; Young, A.H.

    2014-01-01

    Objective:There has been little investigation of early trauma in bipolar disorder despite evidence that stress impacts on the course of this illness. We aimed to compare the rates of childhood trauma in adults with bipolar disorder to a healthy control group, and to investigate the impact of childhood trauma on the clinical course of bipolar disorder.Methods:Retrospective assessment of childhood trauma was conducted using the Childhood Trauma Questionnaire (CTQ) in 60 outpatients with bipolar...

  3. Triple-mode single-transistor graphene amplifier and its applications.

    Science.gov (United States)

    Yang, Xuebei; Liu, Guanxiong; Balandin, Alexander A; Mohanram, Kartik

    2010-10-26

    We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.

  4. E-Learning System for Design and Construction of Amplifier Using Transistors

    Science.gov (United States)

    Takemura, Atsushi

    2014-01-01

    This paper proposes a novel e-Learning system for the comprehensive understanding of electronic circuits with transistors. The proposed e-Learning system allows users to learn a wide range of topics, encompassing circuit theories, design, construction, and measurement. Given the fact that the amplifiers with transistors are an integral part of…

  5. A method for the measurement of the turn-on condition in MOS transistors

    NARCIS (Netherlands)

    Wallinga, H.

    1971-01-01

    Metal-oxide-silicon (MOS) integrated circuits usually consist of MOS transistors and interconnections. Both, interconnections and MOS transistors are built up of diffused regions in the bulk substrate and conductive strips (metal or polycrystalline silicon) on top of the oxide. For proper electrical

  6. Graphene Hot-electron Transistors

    OpenAIRE

    Vaziri, Sam

    2016-01-01

    Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. In an optimized GBT, the ultimate thinness of the graphene-base and its high conductivity, potentially, enable HF performance up to the THz region.  This thesis...

  7. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  8. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka

    2008-01-01

    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

  9. Junctionless Cooper pair transistor

    Science.gov (United States)

    Arutyunov, K. Yu.; Lehtinen, J. S.

    2017-02-01

    Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current-voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  10. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

    2017-02-15

    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  11. Polarization induced doped transistor

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Huili (Grace); Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  12. Reduction of Power Dissipation in Dynamic BiCMOS Logic Gates by Transistor Reordering

    Directory of Open Access Journals (Sweden)

    S. M. Rezaul Hasan

    2002-01-01

    Full Text Available This paper explores the deterministic transistor reordering in low-voltage dynamic BiCMOS logic gates, for reducing the dynamic power dissipation. The constraints of load driving (discharging capability and NPN turn-on delay for MOSFET reordered structures has been carefully considered. Simulations shows significant reduction in the dynamic power dissipation for the transistor reordered BiCMOS structures. The power-delay product figure-of-merit is found to be significantly enhanced without any associated silicon-area penalty. In order to experimentally verify the reduction in power dissipation, original and reordered structures were fabricated using the MOSIS 2 μm N-well analog CMOS process which has a P-base layer for bipolar NPN option. Measured results shows a 20% reduction in the power dissipation for the transistor reordered structure, which is in close agreement with the simulation.

  13. New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices

    Science.gov (United States)

    Wilson, Martin C.; Osborne, Peter H.; Thomas, Simon; Cook, Trevor

    1999-09-01

    A new high performance silicon complementary bipolar technology is introduced. In addition a novel process 'enhancement' technique based on a local oxidation is described and demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricate. We propose that the technique we have used will allow specific transistors within a circuit to be optimized, as required.

  14. Pixel-Level Digital-to-Analog Conversion Scheme with Compensation of Thin-Film-Transistor Variations for Compact Integrated Data Drivers of Active Matrix Organic Light Emitting Diodes

    Science.gov (United States)

    Kim, Tae-Wook; Park, Sang-Gyu; Choi, Byong-Deok

    2011-03-01

    The previous pixel-level digital-to-analog-conversion (DAC) scheme that implements a part of a DAC in a pixel circuit turned out to be very efficient for reducing the peripheral area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). However, how the pixel-level DAC can be compatible with the existing pixel circuits including compensation schemes of TFT variations and IR drops on supply rails, which is of primary importance for active matrix organic light emitting diodes (AMOLEDs) is an issue in this scheme, because LTPS TFTs suffer from random variations in their characteristics. In this paper, we show that the pixel-level DAC scheme can be successfully used with the previous compensation schemes by giving two examples of voltage- and current-programming pixels. The previous pixel-level DAC schemes require additional two TFTs and one capacitor, but for these newly proposed pixel circuits, the overhead is no more than two TFTs by utilizing the already existing capacitor. In addition, through a detailed analysis, it has been shown that the pixel-level DAC can be expanded to a 4-bit resolution, or be applied together with 1:2 demultiplexing driving for 6- to 8-in. diagonal XGA AMOLED display panels.

  15. Bipolar disorder: an update

    African Journals Online (AJOL)

    self-esteem/grandiosity, significantly decreased need for sleep, racing speech, flight .... association analysis supports a role for ANK3 and CACNA1C in bipolar disorder. Nat Genet. 2008 ... adolescent depression: A matter of both risk and resilience. ... Rosenberg G. The mechanisms of action of valproate in neuropsychiatric.

  16. Is Cognitive Style Bipolar?

    Science.gov (United States)

    Schroeder, David H.

    This study assessed the bipolarity of cognitive style for 970 clients of the Johnson O'Connor Research Foundation, a vocational guidance service. The 462 male and 508 female examinees were aged 14 to 65 years, with a median age of 24 years. Three cognitive style tests were investigated: (1) the Kagan Matching Familiar Figures Test (KMFFT); (2) the…

  17. Schottky bipolar I-MOS: An I-MOS with Schottky electrodes and an open-base BJT configuration for reduced operating voltage

    Science.gov (United States)

    Kannan, N.; Kumar, M. Jagadesh

    2017-04-01

    In this paper, we have proposed a novel impact ionization MOS (I-MOS) structure, called the Schottky bipolar I-MOS, with Schottky source and drain electrodes and utilizing the open-base bipolar junction transistor (BJT) configuration for achieving reduction in the operating voltage of the I-MOS transistor. We report, using 2-D simulations, a low operating voltage (∼1.1 V) and a low subthreshold swing (∼3.6 mV/Decade). For the corresponding p-i-n I-MOS, the operating voltage is ∼5.5 V. The operating voltage of the Schottky bipolar I-MOS is the lowest reported operating voltage for silicon based I-MOS transistors. The nearly 80% reduction in the operating voltage of the Schottky bipolar I-MOS makes it suitable for applications requiring low operating voltages. The Schottky bipolar I-MOS is also expected to have an improved reliability over the p-i-n I-MOS since high energy carriers, induced by impact ionization near the drain, do not have to pass under the gate region in the channel. The use of Schottky contacts instead of heavily doped source and drain regions and the low channel doping level reduces the required thermal budget for device fabrication. The low operating voltage, low subthreshold swing and possibly improved reliability of the Schottky bipolar I-MOS, makes it a potential solution for applications where steep subthreshold slope transistors are being explored as alternative to the conventional MOS transistor.

  18. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

    Science.gov (United States)

    Chen, Lin; Cai, Fuxi; Otuonye, Ugo; Lu, Wei D

    2016-01-13

    Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si core/shell nanowires epitaxially grown and integrated on a ⟨111⟩ Si substrate were fabricated and analyzed. Because of efficient gate coupling in the nanowire-GAA transistor structure and the high density one-dimensional hole gas formed in the Ge nanowire core, excellent P-type transistor behaviors with Ion of 750 μA/μm were obtained at a moderate gate length of 544 nm with minimal short-channel effects. The experimental data can be quantitatively modeled by a GAA junctionless transistor model with few fitting parameters, suggesting the nanowire transistors can be fabricated reliably without introducing additional factors that can degrade device performance. Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask film. Analysis of the histogram of different devices yielded a single dominate peak in device parameter distribution, indicating excellent uniformity and high confidence of single nanowire operation. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter with near rail-to-rail output voltage was demonstrated, and device matching in the logic can be conveniently obtained by controlling the number of nanowires employed in different devices rather than modifying device geometry. These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.

  19. ON BIPOLAR SINGLE VALUED NEUTROSOPHIC GRAPHS

    OpenAIRE

    Said Broumi; Mohamed Talea; Assia Bakali; Florentin Smarandache

    2016-01-01

    In this article, we combine the concept of bipolar neutrosophic set and graph theory. We introduce the notions of bipolar single valued neutrosophic graphs, strong bipolar single valued neutrosophic graphs, complete bipolar single valued neutrosophic graphs, regular bipolar single valued neutrosophic graphs and investigate some of their related properties. 

  20. ON BIPOLAR SINGLE VALUED NEUTROSOPHIC GRAPHS

    OpenAIRE

    Said Broumi; Mohamed Talea; Assia Bakali; Florentin Smarandache

    2016-01-01

    In this article, we combine the concept of bipolar neutrosophic set and graph theory. We introduce the notions of bipolar single valued neutrosophic graphs, strong bipolar single valued neutrosophic graphs, complete bipolar single valued neutrosophic graphs, regular bipolar single valued neutrosophic graphs and investigate some of their related properties. 

  1. On Bipolar Single Valued Neutrosophic Graphs

    OpenAIRE

    SAID BROUMI; MOHAMED TALEA; ASSIA BAKALI; FLORENTIN SMARANDACHE

    2016-01-01

    In this article, we combine the concept of bipolar neutrosophic set and graph theory. We introduce the notions of bipolar single valued neutrosophic graphs, strong bipolar single valued neutrosophic graphs, complete bipolar single valued neutrosophic graphs, regular bipolar single valued neutrosophic graphs and investigate some of their related properties. 

  2. REGENERATIVE TRANSISTOR AMPLIFIER

    Science.gov (United States)

    Kabell, L.J.

    1958-11-25

    Electrical circults for use in computers and the like are described. particularly a regenerative bistable transistor amplifler which is iurned on by a clock signal when an information signal permits and is turned off by the clock signal. The amplifier porforms the above function with reduced power requirements for the clock signal and circuit operation. The power requirements are reduced in one way by employing transformer coupling which increases the collector circuit efficiency by eliminating the loss of power in the collector load resistor.

  3. An Investigation of Impact of Transistor Gate’s Thickness of Floating Gate Transistor in Improvement of Sensitivity of Low-Power Gamma-Ray Dosimeters

    Directory of Open Access Journals (Sweden)

    Armin Afshari Moghaddam

    2016-03-01

    Full Text Available Gamma-ray dosimeter is an instrument which measures dose amount attracted by gamma ray. This integrated sensor is utilized for high irradiation and low sensitivity applications such as blood sterilization. In this article, a gamma-ray MOSFET dosimeter including a floating-gate MOSFET transistor as a sensor and a gate connection reference transistor with identical geometry are simulated using the TSMC 0.13-micron process technology. Floating-gate transistor is used in low-power circuits. The dosimeter applied herein makes use of general dose measurement methodology. Source of gamma ray is cobalt-60. Here, the impact of transistor gate’s thickness of floating transistor served as a sensor on sensitivity of dosimeter is examined. To do so, dosimeter was simulated using the software HSPICE, and impact of different thicknesses of floating transistors on sensitivity was examined. Finally, it was concluded that an increase in transistor gate’s thickness of floating transistor would bring about an improvement of at least 25 percent in sensitivity.

  4. Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

    Institute of Scientific and Technical Information of China (English)

    于俊庭; 陈书明; 陈建军; 黄鹏程

    2015-01-01

    FinFET technologies are becoming the mainstream process as technology scales down. Based on a 28-nm bulk p-FinFET device, we have investigated the fin width and height dependence of bipolar amplification for heavy-ion-irradiated FinFETs by 3D TCAD numerical simulation. Simulation results show that due to a well bipolar conduction mechanism rather than a channel (fin) conduction path, the transistors with narrower fins exhibit a diminished bipolar amplification effect, while the fin height presents a trivial effect on the bipolar amplification and charge collection. The results also indicate that the single event transient (SET) pulse width can be mitigated about 35%at least by optimizing the ratio of fin width and height, which can provide guidance for radiation-hardened applications in bulk FinFET technology.

  5. Life expectancy in bipolar disorder

    DEFF Research Database (Denmark)

    Kessing, Lars Vedel; Vradi, Eleni; Andersen, Per Kragh

    2015-01-01

    OBJECTIVE: Life expectancy in patients with bipolar disorder has been reported to be decreased by 11 to 20 years. These calculations are based on data for individuals at the age of 15 years. However, this may be misleading for patients with bipolar disorder in general as most patients have a later...... onset of illness. The aim of the present study was to calculate the remaining life expectancy for patients of different ages with a diagnosis of bipolar disorder. METHODS: Using nationwide registers of all inpatient and outpatient contacts to all psychiatric hospitals in Denmark from 1970 to 2012 we...... remaining life expectancy in bipolar disorder and that of the general population decreased with age, indicating that patients with bipolar disorder start losing life-years during early and mid-adulthood. CONCLUSIONS: Life expectancy in bipolar disorder is decreased substantially, but less so than previously...

  6. Bipolar Disorder in Children and Teens

    Science.gov (United States)

    ... is in crisis. What do I do? Share Bipolar Disorder in Children and Teens Download PDF Download ... brochure will give you more information. What is bipolar disorder? Bipolar disorder is a serious brain illness. ...

  7. Big data for bipolar disorder.

    Science.gov (United States)

    Monteith, Scott; Glenn, Tasha; Geddes, John; Whybrow, Peter C; Bauer, Michael

    2016-12-01

    The delivery of psychiatric care is changing with a new emphasis on integrated care, preventative measures, population health, and the biological basis of disease. Fundamental to this transformation are big data and advances in the ability to analyze these data. The impact of big data on the routine treatment of bipolar disorder today and in the near future is discussed, with examples that relate to health policy, the discovery of new associations, and the study of rare events. The primary sources of big data today are electronic medical records (EMR), claims, and registry data from providers and payers. In the near future, data created by patients from active monitoring, passive monitoring of Internet and smartphone activities, and from sensors may be integrated with the EMR. Diverse data sources from outside of medicine, such as government financial data, will be linked for research. Over the long term, genetic and imaging data will be integrated with the EMR, and there will be more emphasis on predictive models. Many technical challenges remain when analyzing big data that relates to size, heterogeneity, complexity, and unstructured text data in the EMR. Human judgement and subject matter expertise are critical parts of big data analysis, and the active participation of psychiatrists is needed throughout the analytical process.

  8. Molecules in Bipolar Outflows

    CERN Document Server

    Tafalla, Mario

    2012-01-01

    Bipolar outflows constitute some of the best laboratories to study shock chemistry in the interstellar medium. A number of molecular species have their abundance enhanced by several orders of magnitude in the outflow gas, likely as a combined result of dust mantle disruption and high temperature gas chemistry, and therefore become sensitive indicators of the physical changes taking place in the shock. Identifying these species and understanding their chemical behavior is therefore of high interest both to chemical studies and to our understanding of the star-formation process. Here we review some of the recent progress in the study of the molecular composition of bipolar outflows, with emphasis in the tracers most relevant for shock chemistry. As we discuss, there has been rapid progress both in characterizing the molecular composition of certain outflows as well as in modeling the chemical processes likely involved. However, a number of limitations still affect our understanding of outflow chemistry. These i...

  9. Childhood trauma in bipolar disorder

    OpenAIRE

    Watson, Stuart; Gallagher, Peter; Dougall, Dominic; Porter, Richard; Moncrieff, Joanna; Ferrier, I Nicol; Young, Allan H.

    2014-01-01

    Objective: There has been little investigation of early trauma in bipolar disorder despite evidence that stress impacts on the course of this illness. We aimed to compare the rates of childhood trauma in adults with bipolar disorder to a healthy control group, and to investigate the impact of childhood trauma on the clinical course of bipolar disorder. Methods: Retrospective assessment of childhood trauma was conducted using the Childhood Trauma Questionnaire (CTQ) in 60 outpatients with bipo...

  10. Bipolar intimal tacking device.

    Science.gov (United States)

    Gross, C E; Williams, G

    1984-09-01

    A bipolar electrocoagulating device has been designed to thermally tack arterial intimal flaps to the artery wall. The device was tested on intimal flaps created in the rabbit descending aorta. The vascular segments were tested for patency and the thermal tack points were examined on a scanning electron microscope. The tack points were shown to be of sufficient tensile strength and to have minimal thrombogenicity.

  11. [Creativity and bipolar disorder].

    Science.gov (United States)

    Maçkalı, Zeynep; Gülöksüz, Sinan; Oral, Timuçin

    2014-01-01

    The relationship between creativity and bipolar disorder has been an intriguing topic since ancient times. Early studies focused on describing characteristics of creative people. From the last quarter of the twentieth century, researchers began to focus on the relationship between mood disorders and creativity. Initially, the studies were based on biographical texts and the obtained results indicated a relationship between these two concepts. The limitations of the retrospective studies led the researchers to develop systematic investigations into this area. The systematic studies that have focused on artistic creativity have examined both the prevalence of mood disorders and the creative process. In addition, a group of researchers addressed the relationship in terms of affective temperaments. Through the end of the 90's, the scope of creativity was widened and the notion of everyday creativity was proposed. The emergence of this notion led researchers to investigate the associations of the creative process in ordinary (non-artist) individuals. In this review, the descriptions of creativity and creative process are mentioned. Also, the creative process is addressed with regards to bipolar disorder. Then, the relationship between creativity and bipolar disorder are evaluated in terms of aforementioned studies (biographical, systematic, psychobiographical, affective temperaments). In addition, a new model, the "Shared Vulnerability Model" which was developed to explain the relationship between creativity and psychopathology is introduced. Finally, the methodological limitations and the suggestions for resolving these limitations are included.

  12. Bipolar Disorder and Diabetes Mellitus

    Directory of Open Access Journals (Sweden)

    Sermin Kesebir

    2010-04-01

    Full Text Available Comorbid endocrine and cardiovascular situations with bipolar disorder usually result from the bipolar disorder itself or as a consequence of its treatment. With habits and lifestyle, genetic tendency and side effects, this situation is becoming more striking. Subpopulations of bipolar disorders patients should be considered at high risk for diabetes mellitus. The prevalence of diabetes mellitus in bipolar disorder may be three times greater than in the general population. Comorbidity of diabetes causes a pathophysiological overlapping in the neurobiological webs of bipolar cases. Signal mechanisms of glycocorticoid/insulin and immunoinflammatory effector systems are junction points that point out the pathophysiology between bipolar disorder and general medical cases susceptible to stress. Glycogen synthetase kinase (GSK-3 is a serine/treonine kinase and inhibits the transport of glucose stimulated by insulin. It is affected in diabetes, cancer, inflammation, Alzheimer disease and bipolar disorder. Hypoglycemic effect of lithium occurs via inhibiting glycogen synthetase kinase. When comorbid with diabetes, the other disease -for example bipolar disorder, especially during its acute manic episodes-, causes a serious situation that presents its influences for a lifetime. Choosing pharmacological treatment and treatment adherence are another important interrelated areas. The aim of this article is to discuss and review the etiological, clinical and therapeutic properties of diabetes mellitus and bipolar disorder comorbidity.

  13. Organic transistors making use of room temperature ionic liquids as gating medium

    Science.gov (United States)

    Hoyos, Jonathan Javier Sayago

    biases. We systematically investigated EG transistors employing RTILs belonging to the same family, i.e. based on a common anion and different cations. The transistor characteristics showed a limited cation influence in establishing the p-type doping of the conducting polymer. Interestingly, we observed that the transistor response time depends on at least two processes: the redistribution of ions from the electrolyte into the transistor channel, affecting the gate-source current (I gs); and the redistribution of charges in the transistor channel, affecting the drain-source current (Ids), as a function of time. The two processes have different rates, with the latter being the slowest. Incorporating propylene carbonate in the electrolyte proved to be an effective solution to increase the ionic conductivity, to lower the viscosity and, consequently, to reduce the transistor response time. Finally, we were able to demonstrate a multifunctional device integrating the transistor logic function with that of energy storage in a supercapacitor: the TransCap. The polymer/electrolyte/carbon vertical stacking of the EG transistor features the cell configuration of a hybrid supercapacitor. Supercapacitors are high specific power systems that, for their ability to store/deliver charge within short times may outperform batteries in applications having high power demand. When the TransCap is ON (open transistor channel), the polymer and the carbon gate electrodes store charge (Q) at a given Vgs, hence the stored energy equals Q˙V gs. When the TransCap is switched OFF, the channel and the gate are discharged and the energy can be delivered back to power other electronic components. EG transistors, making use of activated carbon as gate electrode and different RTILs as well as RTIL solvent mixtures as electrolyte gating medium, are interesting towards low voltage printable electronics. The high capacitance at the interface between the electrolyte and the transistor channel enables

  14. In0.69Al0.31As0.41Sb0.59/In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers

    Science.gov (United States)

    2010-09-01

    associated fmax/ ft ratio of 0.61 (with ft ¼ 59 GHz), very close to the measured ratio of fmax/ft ¼ 0.57. fmax is expected to improve by nearly a factor of 2.5...49, pp. 1875–1895 2 Papanicolaou , N.A., Bennett, B.R., Boos, J.B., Park, D., and Bass, R.: ‘Sb-based HEMTs with InAlSb/InAs heterojunction’, Electron...Hobart, K.D., Park, D., and Papanicolaou , N.A.: ‘InAlAsSb/InGaSb double heterojunction bipolar transistor’, Electron. Lett., 2005, 41, pp. 370–371 6

  15. Retinal bipolar cells: temporal filtering of signals from cone photoreceptors.

    Science.gov (United States)

    Burkhardt, Dwight A; Fahey, Patrick K; Sikora, Michael A

    2007-01-01

    The temporal dynamics of the response of neurons in the outer retina were investigated by intracellular recording from cones, bipolar, and horizontal cells in the intact, light-adapted retina of the tiger salamander (Ambystoma tigrinum), with special emphasis on comparing the two major classes of bipolars cells, the ON depolarizing bipolars (Bd) and the OFF hyperpolarizing bipolars (Bh). Transfer functions were computed from impulse responses evoked by a brief light flash on a steady background of 20 cd/m(2). Phase delays ranged from about 89 ms for cones to 170 ms for Bd cells, yielding delays relative to that of cones of about 49 ms for Bh cells and 81 ms for Bd cells. The difference between Bd and Bh cells, which may be due to a delay introduced by the second messenger G-protein pathway unique to Bd cells, was further quantified by latency measurements and responses to white noise. The amplitude transfer functions of the outer retinal neurons varied with light adaptation in qualitative agreement with results for other vertebrates and human vision. The transfer functions at 20 cd/m(2) were predominantly low pass with 10-fold attenuation at about 13, 14, 9.1, and 7.7 Hz for cones, horizontal, Bh, and Bd cells, respectively. The transfer function from the cone voltage to the bipolar voltage response, as computed from the above measurements, was low pass and approximated by a cascade of three low pass RC filters ("leaky integrators"). These results for cone-->bipolar transmission are surprisingly similar to recent results for rod-->bipolar transmission in salamander slice preparations. These and other findings suggest that the rate of vesicle replenishment rather than the rate of release may be a common factor shaping synaptic signal transmission from rods and cones to bipolar cells.

  16. Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

    Science.gov (United States)

    McCarthy, M. A.; Liu, B.; Donoghue, E. P.; Kravchenko, I.; Kim, D. Y.; So, F.; Rinzler, A. G.

    2011-04-01

    Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.

  17. A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation.

    Science.gov (United States)

    Wang, Peng-Fei; Lin, Xi; Liu, Lei; Sun, Qing-Qing; Zhou, Peng; Liu, Xiao-Yong; Liu, Wei; Gong, Yi; Zhang, David Wei

    2013-08-09

    As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (≤2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra-high-speed writing operations (on time scales of ~1 nanosecond). A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance.

  18. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    Science.gov (United States)

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

  19. Semiconductors for organic transistors

    Directory of Open Access Journals (Sweden)

    Antonio Facchetti

    2007-03-01

    Full Text Available Organic molecules/polymers with a π-conjugated (heteroaromatic backbone are capable of transporting charge and interact efficiently with light. Therefore, these systems can act as semiconductors in opto-electronic devices similar to inorganic materials. However, organic chemistry offers tools for tailoring materials' functional properties via modifications of the molecular/monomeric units, opening new possibilities for inexpensive device manufacturing. This article reviews the fundamental aspects behind the structural design/realization of p- (hole transporting and n-channel (electron-transporting semiconductors for organic field-effect transistors (OFETs. An introduction to OFET principles and history, as well as of the state-of-the-art organic semiconductor structure and performance of OFETs is provided.

  20. The dual role of multiple-transistor charge sharing collection in single-event transients

    Institute of Scientific and Technical Information of China (English)

    Guo Yang; Chen Jian-Jun; He Yi-Bai; Liang Bin; Liu Bi-Wei

    2013-01-01

    As technologies scale down in size,multiple-transistors being affected by a single ion has become a universal phenomenon,and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors.In this paper,not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET),but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain,due to the charge sharing collection and the electrical interaction.The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect,but the SET induced by striking the on-state PMOS becomes dominant.It is indicated in this study that in the advanced technologies,the SET will no longer just be induced by an ion striking the off-state transistor,and the SET sensitive region will no longer just surround the off-state transistor either,as it is in the older technologies.We also discuss this issue in a three-transistor inverter in depth,and the study illustrates that the three-transistor inverter is still a better replacement for spacebome integrated circuit design in advanced technologies.

  1. Gate-enclosed NMOS transistors

    Institute of Scientific and Technical Information of China (English)

    Fan Xue; Li Ping; Li Wei; Zhang Bin; Xie Xiaodong; Wang Gang; Hu Bin; Zhai Yahong

    2011-01-01

    In order to quantitatively compare the design cost and performance of various gate styles,NMOS transistors with two-edged,annular and ring gate layouts were designed and fabricated by a commercial 0.35 μm CMOS process.By comparing the minimum W/L ratios and transistor areas,it was found that either the annular layout or its ring counterpart incurs a higher area penalty that depends on the W/L ratio of the transistor to be designed.Furthermore,by comparing the output and transfer characteristics of the transistors and analyzing the popular existing methods for extracting the effective W/L ratio,it was shown that the mid-line approximation for annular NMOS could incur an error of more than 10%.It was also demonstrated that the foundry-provided extraction tool needs significant adaptation when being applied to the enclosed-gate transistors,since it is targeted only toward the two-edged transistor.A simple approach for rough extraction of the W/L ratio for the ring-gate NMOS was presented and its effectiveness was confirmed by the experimental results with an error up to 8%.

  2. Cognitive impairment in bipolar disorder.

    Science.gov (United States)

    Latalova, Klara; Prasko, Jan; Diveky, Tomas; Velartova, Hana

    2011-03-01

    Provide an overview of how bipolar disorder affects cognitive function in patients. MEDLINE and PsycInfo data bases were searched for articles indexed by the combinations of MESH term or key word "bipolar disorder" with the following terms: "cognition", "memory", "neuropsychology", "neuropsychological tests", "lithium", "anticonvulsants", "antipsychotics", and "schizophrenia". Constraints limiting time period of publications or their language were not applied. Reference lists of publications identified by these procedures were hand-searched for additional relevant citations. There is evidence of stable and lasting cognitive impairment in all phases of bipolar disorder, including the remission phase, particularly in the following domains: sustained attention, memory and executive functions. But research on the cognitive functions has yielded inconsistent results over recent years. There is a growing need for clarification regarding the magnitude, clinical relevance and confounding variables of cognitive impairment in bipolar patients. The impact of bipolar illness on cognition can be influenced by age of onset, pharmacological treatments, individual response, familial risk factors, and clinical features. In addition to the mood state, cognitive performance in bipolar patients is influenced by seasonality. Previous optimistic assumptions about the prognosis of bipolar disorder were based on the success of the control of mood symptoms by pharmacotherapy. However, it is now clear that the "remitted" euthymic bipolar patients have distinct impairments of executive function, verbal memory, psychomotor speed, and sustained attention. Mood stabilizers and atypical antipsychotics may reduce cognitive deficits in certain domains and may have a positive effect on quality of life and social functioning.

  3. Social functioning of bipolar offspring

    NARCIS (Netherlands)

    Reichart, Catrien G.; van der Ende, Jan; Wals, Marjolein; Hillegers, Manon H. J.; Nolen, Willem A.; Ormel, Johan; Verhulst, Frank C.

    2007-01-01

    Background: Bipolar patients have impaired social functioning compared to people in the general population. It has been suggested that children of bipolar patients also have impaired social functioning. The objective of this study was to compare social functioning of adolescent and young adult offsp

  4. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    Science.gov (United States)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  5. Scientific attitudes towards bipolar disorders

    Directory of Open Access Journals (Sweden)

    Mohammad-Hossein Biglu

    2014-02-01

    Full Text Available Introduction: Bipolar disorder is a psychiatric condition that is also called manic-depressive disease. It causes unusual changes in mood, energy, activity levels, and the ability to carry out day-to-day tasks. In the present study, 3 sets of data were considered and analyzed: first, all papers categorized under Bipolar Disorders in Science Citation Index Expanded (SCI-E database through 2001-2011; second, papers published by the international journal of Bipolar Disorders indexed in SCI-E during a period of 11 years; and third, all papers distributed by the international journal of Bipolar Disorders indexed in MEDLINE during the period of study. Methods: The SCI-E database was used to extract all papers indexed with the topic of Bipolar Disorders as well as all papers published by The International Journal of Bipolar Disorders. Extraction of data from MEDLINE was restricted to the journals name from setting menu. The Science of Science Tool was used to map the co-authorship network of papers published by The International Journal of Bipolar Disorders through 2009-2011. Results: Analysis of data showed that the majority of publications in the subject area of bipolar disorders indexed in SCI-E were published by The International Journal of Bipolar Disorders. Although journal articles consisted of 59% of the total publication type in SCI-E, 65% of publications distributed by The Journal of Bipolar Disorders were in the form of meetingabstracts. Journal articles consisted of only 23% of the total publications. USA was the leading country regarding sharing data in the field of bipolar disorders followed by England, Canada, and Germany. Conclusion: The editorial policy of The International Journal of Bipolar Disorders has been focused on new themes and new ways of researching in the subject area of bipolar disorder. Regarding the selection of papers for indexing, the SCI-E database selects data more comprehensively than MEDLINE. The number of papers

  6. Epidemiology in Pediatric Bipolar Disorder

    Directory of Open Access Journals (Sweden)

    Caner Mutlu

    2015-12-01

    Full Text Available Childhood and adolescent bipolar disorder diagnosis has been increasing recently. Since studies evaluating attempted suicide rates in children and adolescents have shown bipolarity to be a significant risk factor, diagnosis and treatment of bipolarity has become a very important issue. Since there is a lack of specific diagnostic criteria for especially preadolescent samples and evaluations are made mostly symptomatically, suspicions about false true diagnosis and increased prevalence rates have emerged. This situation leads to controversial data about the prevalence rates of bipolar disorder in children and adolescents. The aim of this article is to review the prevalence of childhood and adolescent bipolar disorder in community, inpatient and outpatient based samples in literature.

  7. Bipolar Disorder and Childhood Trauma

    Directory of Open Access Journals (Sweden)

    Evrim Erten

    2015-06-01

    Full Text Available Bipolar disorder is a chronic disorder in which irregular course of depressive, mania or mixed episodes or a complete recovery between episodes can be observed. The studies about the effects of traumatic events on bipolar disorder showed that they had significant and long-term effects on the symptoms of the disorder. Psychosocial stress might change the neurobiology of bipolar disorder over time. The studies revealed that the traumatic events could influence not only the onset of the disorder but also the course of the disorder and in these patients the rate of suicide attempt and comorbid substance abuse might increase. Bipolar patients who had childhood trauma had an earlier onset, higher number of episodes and comorbid disorders. In this review, the relationship between childhood trauma and bipolar disorder is reviewed. [Psikiyatride Guncel Yaklasimlar - Current Approaches in Psychiatry 2015; 7(2: 157-165

  8. Genetics of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Kerner B

    2014-02-01

    Full Text Available Berit Kerner Semel Institute for Neuroscience and Human Behavior, University of California, Los Angeles, Los Angeles, CA, USA Abstract: Bipolar disorder is a common, complex genetic disorder, but the mode of transmission remains to be discovered. Many researchers assume that common genomic variants carry some risk for manifesting the disease. The research community has celebrated the first genome-wide significant associations between common single nucleotide polymorphisms (SNPs and bipolar disorder. Currently, attempts are under way to translate these findings into clinical practice, genetic counseling, and predictive testing. However, some experts remain cautious. After all, common variants explain only a very small percentage of the genetic risk, and functional consequences of the discovered SNPs are inconclusive. Furthermore, the associated SNPs are not disease specific, and the majority of individuals with a “risk” allele are healthy. On the other hand, population-based genome-wide studies in psychiatric disorders have rediscovered rare structural variants and mutations in genes, which were previously known to cause genetic syndromes and monogenic Mendelian disorders. In many Mendelian syndromes, psychiatric symptoms are prevalent. Although these conditions do not fit the classic description of any specific psychiatric disorder, they often show nonspecific psychiatric symptoms that cross diagnostic boundaries, including intellectual disability, behavioral abnormalities, mood disorders, anxiety disorders, attention deficit, impulse control deficit, and psychosis. Although testing for chromosomal disorders and monogenic Mendelian disorders is well established, testing for common variants is still controversial. The standard concept of genetic testing includes at least three broad criteria that need to be fulfilled before new genetic tests should be introduced: analytical validity, clinical validity, and clinical utility. These criteria are

  9. [Treatment of bipolar disorder].

    Science.gov (United States)

    Barde, Michael; Bellivier, Frank

    2014-11-01

    Bipolar disorder is a chronic pathology whose management must lead to limit the social, professional and family impacts as well as suicidal risk. The treatment of acute episodes and prophylaxis is based on mood stabilizer treatments whose lithium is a leader. They will be chosen according to the background and history of the disease. Anti-depressants must be used with care to minimize the risk of manic episode and the induction of rapid cycles. The prognosis is not solving major episodes but avoiding major mood episodes. The management of residual symptoms (especially neuro-cognitive) is also a major challenge prognosis and justifies the implementation of adjuvant psychotherapeutic strategies.

  10. Advancement in organic nanofiber based transistors

    DEFF Research Database (Denmark)

    Jensen, Per Baunegaard With; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication and characte......The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication...... and characterization of OLETs using the organic semiconductors para-hexaphenylene (p6P), 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP) and 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2). These molecules can self-assemble forming molecular crystalline nanofibers. Organic nanofibers can form the basis for light......-emitters for future nanophotonic applications, due to their many interesting optoelectronic properties, such as polarized photo- and electroluminescence, waveguiding and emission color tunability. A simple roll printing technique1 has allowed us to implement these nanofibers in different types of devices. Multicolor...

  11. Novel multiple criteria decision making methods based on bipolar neutrosophic sets and bipolar neutrosophic graphs

    OpenAIRE

    Muhammad, Akram; Musavarah, Sarwar

    2016-01-01

    In this research study, we introduce the concept of bipolar neutrosophic graphs. We present the dominating and independent sets of bipolar neutrosophic graphs. We describe novel multiple criteria decision making methods based on bipolar neutrosophic sets and bipolar neutrosophic graphs. We also develop an algorithm for computing domination in bipolar neutrosophic graphs.  

  12. Novel multiple criteria decision making methods based on bipolar neutrosophic sets and bipolar neutrosophic graphs

    OpenAIRE

    Muhammad, Akram; Musavarah, Sarwar

    2016-01-01

    In this research study, we introduce the concept of bipolar neutrosophic graphs. We present the dominating and independent sets of bipolar neutrosophic graphs. We describe novel multiple criteria decision making methods based on bipolar neutrosophic sets and bipolar neutrosophic graphs. We also develop an algorithm for computing domination in bipolar neutrosophic graphs.  

  13. Principles of transistor circuits introduction to the design of amplifiers, receivers and digital circuits

    CERN Document Server

    Amos, S W

    2013-01-01

    For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand an

  14. Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

    Energy Technology Data Exchange (ETDEWEB)

    Seo, M.; Kim, H.; Kim, Y. H.; Yun, H.; McAllister, K.; Lee, S. W., E-mail: leesw@konkuk.ac.kr [Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701 (Korea, Republic of); Na, J.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Lee, B. J.; Kim, J. J.; Jeong, G. H. [Department of Nano Applied Engineering, Kangwon National University, Kangwon-do 200-701 (Korea, Republic of); Lee, I.; Kim, K. S. [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

    2015-07-20

    A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

  15. Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure

    Science.gov (United States)

    Maiorano, V.; Bramanti, A.; Carallo, S.; Cingolani, R.; Gigli, G.

    2010-03-01

    A bottom contact/top gate ambipolar "p-i-n" layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices.

  16. Fabrication-Technology Research of New Type Silicon Magnetic-Sensitive Transistor

    Institute of Scientific and Technical Information of China (English)

    Xiaofeng Zhao; Dianzhong Wen

    2006-01-01

    This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique. An experiment research on basic characteristic of the silicon magnetic-sensitive transistor was done. Anisotropic etching and reliable technique project were provided and applied in order to fabricate SMST with rectangle-plank-cubic construction. This means that a new kind of fabrication technology for silicon magnetic-sensitive transistor was provided. The result shows that the technique can be not only compatible with IC technology but also integrated easily, and has a wide application field.

  17. Passivated ambipolar black phosphorus transistors

    Science.gov (United States)

    Yue, Dewu; Lee, Daeyeong; Jang, Young Dae; Choi, Min Sup; Nam, Hye Jin; Jung, Duk-Young; Yoo, Won Jong

    2016-06-01

    We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used.We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ~83 cm2 V-1 s-1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ~10 nm thick BP flake was used. Electronic supplementary information (ESI) available: Transfer characteristics of BP field effect transistors (BV1-BV4) (Fig. S1 and S2 and Table S1); output characteristics of BP field effect transistors in different directions (Fig. S3

  18. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

    Science.gov (United States)

    Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2014-10-01

    We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs.

  19. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  20. Risk factors for suicide among children and youths with bipolar spectrum and early bipolar disorder.

    Directory of Open Access Journals (Sweden)

    Aleksandra Rajewska-Rager

    2015-06-01

    the overview of recent years literature available in PubMed/MEDLINE database, including the following search criteria: early onset bipolar disorder, bipolar disorder in children and young people, the spectrum of bipolar disorder, and suicidal ideation, suicidal intent, suicide.

  1. Degradation mechanisms of current gain in NPN transistors

    Science.gov (United States)

    Li, Xing-Ji; Geng, Hong-Bin; Lan, Mu-Jie; Yang, De-Zhuang; He, Shi-Yu; Liu, Chao-Ming

    2010-06-01

    An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors (BJTs) is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions. Key parameters were measured in-situ and the change in current gain of the NPN BJTS was obtained at a fixed collector current (Ic = 1 mA). To characterise the radiation damage of NPN BJTs, the ionizing dose Di and displacement dose Dd as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of Dd/(Dd + Di) in the sensitive region given by charged particles. The irradiation particles leading to lower Dd/(Dd + Di) within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger Dd/(Dd + Di) at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger-Spratt equation could be used to describe the experimental data for the latter case.

  2. Asenapine for bipolar disorder

    Directory of Open Access Journals (Sweden)

    Scheidemantel T

    2015-12-01

    Full Text Available Thomas Scheidemantel,1 Irina Korobkova,2 Soham Rej,3,4 Martha Sajatovic1,2 1University Hospitals Case Medical Center, 2Case Western Reserve University School of Medicine, Cleveland, OH, USA; 3Department of Psychiatry, University of Toronto, Toronto, ON, 4Geri PARTy Research Group, Jewish General Hospital, Montreal, QC, Canada Abstract: Asenapine (Saphris® is an atypical antipsychotic drug which has been approved by the US Food and Drug Administration for the treatment of schizophrenia in adults, as well as the treatment of acute manic or mixed episodes of bipolar I in both adult and pediatric populations. Asenapine is a tetracyclic drug with antidopaminergic and antiserotonergic activity with a unique sublingual route of administration. In this review, we examine and summarize the available literature on the safety, efficacy, and tolerability of asenapine in the treatment of bipolar disorder (BD. Data from randomized, double-blind trials comparing asenapine to placebo or olanzapine in the treatment of acute manic or mixed episodes showed asenapine to be an effective monotherapy treatment in clinical settings; asenapine outperformed placebo and showed noninferior performance to olanzapine based on improvement in the Young Mania Rating Scale scores. There are limited data available on the use of asenapine in the treatment of depressive symptoms of BD, or in the maintenance phase of BD. The available data are inconclusive, suggesting the need for more robust data from prospective trials in these clinical domains. The most commonly reported adverse effect associated with use of asenapine is somnolence. However, the somnolence associated with asenapine use did not cause significant rates of discontinuation. While asenapine was associated with weight gain when compared to placebo, it appeared to be modest when compared to other atypical antipsychotics, and its propensity to cause increases in hemoglobin A1c or serum lipid levels appeared to be

  3. Electrostatics of Silicon Nano Transistor

    Directory of Open Access Journals (Sweden)

    Lalit Singh

    2011-01-01

    Full Text Available Nano Transistor represents a unique system for exploring physical phenomena pertaining to charge transport at the nano scale and is expected to play a critical role in future evolution of electronic and optoelectronic devices. This paper summarizes some of the essential electrostatics of nano Metal Oxide Semiconductor Field effect Transistor (MOSFET and their electrical properties. Though the general focus of this work is on surface potential yet the first part presents a brief discussion of the independence of charge at the top of the barrier in the channel of MOS Transistor on Drain voltage. The quantum capacitance is discussed at length. The superposition theorem is used, thereafter, to obtain an expression for self consistent potential in the channel. Finally the I-V characteristics of the device are explored using Landauer formalism. The simulated results for a device are observed to represent the realistic behaviour of the device.

  4. Molecular neurobiological clues to the pathogenesis of bipolar disorder.

    Science.gov (United States)

    Harrison, Paul J

    2016-02-01

    Bipolar disorder is a serious psychiatric disorder, with a high heritability and unknown pathogenesis. Recent genome-wide association studies have identified the first loci, implicating genes such as CACNA1C and ANK3. The genes highlight several pathways, notably calcium signalling, as being of importance. Molecular studies suggest that the risk variants impact on gene regulation and expression. Preliminary studies using reprogrammed patient-derived cells report alterations in the transcriptome and in cellular adhesion and differentiation. Mouse models show that genes involved in circadian biology, acting via dopaminergic effects, reproduce aspects of the bipolar phenotype. These findings together represent significant advances in identification of the genetic and molecular basis of bipolar disorder, yet we are still far from an integrated, evidence-based understanding of its aetiopathogenesis.

  5. Switching circuits based on comparison operations and multiple-β transistor

    Institute of Scientific and Technical Information of China (English)

    吴训威; 杭国强

    1997-01-01

    By using comparison operations, three basic operations, AND, OR and NOT, in Boolean algebra are re-defined Based on the characteristic that the voltage signals are easy to implement comparison operation, various logic functions realized by connecting emitters of the bipolar transistor are analyzed. Furthermore, a novel multiple-β transistor and the linear AND-OR gate, which is composed of the transistor, are investigated. Super high-speed characteristic and multiple-cascade capability of the linear AND-OR gate are verified by PSPICE simulation. Based on the analysis of high-speed switch, which is compatible with the linear AND-OR gate, a high-speed inverter is proposed, which is composed of multiple-β transistors. The corresponding flip-flop design is also given. Finally, the criterion for using linear AND-OR gate to design high-speed switching circuits are presented. Some combinational and sequential circuits are designed as the practical examples. Discussion indicates that the switching circuits bas

  6. Genetics Home Reference: bipolar disorder

    Science.gov (United States)

    ... Conditions Genes Chromosomes & mtDNA Resources Help Me Understand Genetics Share: Email Facebook Twitter Home Health Conditions bipolar ... my family? What is the prognosis of a genetic condition? Genetic and Rare Diseases Information Center Frequency ...

  7. Bipolar-rogue-wave structures

    Science.gov (United States)

    Ding, Yingchun; Zhang, Bin; Feng, Qi; Tang, Xin; Liu, Zhongxuan; Chen, Zhaoyang; Lin, Chengyou

    2017-01-01

    The formation of extreme localization structures in nonlinear dispersive media (water or optical fibres) can be explained and described by the focusing nonlinear Schrödinger equation (NLSE). The NLSE is especially important in understanding how solitons on a condensate background (SCB) appear from a small perturbation through modulation instability. We have studied theoretically SCB solutions solved with the dressing method. A class of bipolar-rogue-wave structures that are constructed by collisions between elementary SCB or bipolar solitonic solutions was found. Besides, we have also found a new class of regular bright solitonic rogue waves that are originated from the collision between two bipolar-rogue-wave structures. The bipolar-rogue-wave structures can be considered to provide a new prototype for rogue-waves dynamics modeling. Our results extend previous studies in the area of rogue waves and may be important in the study of oceanography and optics.

  8. Electronic components, tubes and transistors

    CERN Document Server

    Dummer, G W A

    1965-01-01

    Electronic Components, Tubes and Transistors aims to bridge the gap between the basic measurement theory of resistance, capacitance, and inductance and the practical application of electronic components in equipments. The more practical or usage aspect of electron tubes and semiconductors is given emphasis over theory. The essential characteristics of each main type of component, tube, and transistor are summarized. This book is comprised of six chapters and begins with a discussion on the essential characteristics in terms of the parameters usually required in choosing a resistor, including s

  9. Ideal Channel Field Effect Transistors

    Science.gov (United States)

    2010-03-01

    transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...lattice constant (or pseudomorphic growth). However, for the most popular wide bandgap semiconductor GaN and SiC, the lattice mismatch between GaN ...critical thickness of InN on GaN is about one monolayer. To marry the advantages offered by both narrow bandgap and wide bandgap semiconductors, we

  10. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  11. Development of mos thyristor technological processes for functional integration of new power devices; Developpement de filieres technologiques mos-thyristor adaptees a l`integration fonctionnelle de nouveaux dispositifs de puissance

    Energy Technology Data Exchange (ETDEWEB)

    Berriane, R.

    1997-05-05

    The development of MOS thyristor technological processes for integration of the switching function for high voltage power applications in industrial supply networks, is studied. A MOS-gated optically triggered thyristor is presented, which includes a MOS gated thyristor constituting the power element and a photodiode for optical control detection; protection and control are obtained respectively by a Zener diode and a depletion MOSFET transistor. In order to verify the switching function, a model is proposed and a high voltage planar aluminium gate process technology, compatible with various bipolar and MOSFET devices associations have been developed and optimized. In the framework of industrial supply networks, the integration of a thermal protection element has been investigated. The dual thyristor function application has been also studied, composed of a spontaneously fired, controlled turn off MOS-thyristor association. The early developments of a MOS thyristor polysilicon gate process technology is then presented

  12. Development of alternative low-cost and durable metallic bipolar plates for polymer electrolyte membrane (PEM) fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Okafor, A.C.; Kilicay, O. [Missouri Univ. of Science and Technology, Rolla (United States). Dept. of Mechanical and Aerospace Engineering

    2009-07-01

    Bipolar plates account for significant portion of the cost of proton exchange membrane fuel cells (PEMFCs). This study discussed the design of a high corrosion-resistance metallic bipolar plate as an alternative to the porous graphite bipolar plates currently used in PEMFCs. A literature review of bipolar plate materials and flow field design configurations was conducted. Metallic candidate materials and flow field configurations were identified. Computer-aided design (CAD) models were then development in order to design the software programs used to machine the bipolar plates in 3 different materials. The machined bipolar plates are now being integrated with state-of-the-art membrane electrode assemblies (MEAs) and sealants into single- and 3-cell stacks. The results of some performance, durability, and degradation mechanism analyses were presented.

  13. Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

    Science.gov (United States)

    Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

  14. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  15. Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose

    Science.gov (United States)

    Yuen, Jonathan D.; Walper, Scott A.; Melde, Brian J.; Daniele, Michael A.; Stenger, David A.

    2017-01-01

    We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L‑1.

  16. Quetiapine monotherapy for bipolar depression

    Directory of Open Access Journals (Sweden)

    Michael E Thase

    2008-03-01

    Full Text Available Michael E ThaseDepartments of Psychiatry, University of Pennsylvania School of Medicine, Philadelphia, PA, USA; the Philadelphia Veterans Affairs Medical Center, Philadelphia, PA, USA; and the University of Pittsburgh Medical Center, Pittsburgh, PA, USAAbstract: Bipolar depression is more common, disabling, and difficult-to-treat than the manic and hypomanic phases that define bipolar disorder. Unlike the treatment of so-called “unipolar” depressions, antidepressants generally are not indicated as monotherapies for bipolar depressions and recent studies suggest that - even when used in combination with traditional mood stabilizers – antidepressants may have questionable value for bipolar depression. The current practice is that mood stabilizers are initiated first as monotherapies; however, the antidepressant efficacy of lithium and valproate is modest at best. Within this context the role of atypical antipsychotics is being evaluated. The combination of olanzapine and the antidepressant fluoxetine was the first treatment to receive regulatory approval in the US specifically for bipolar I depression. Quetiapine was the second medication to be approved for this indication, largely as the result of two pivotal trials known by the acronyms of BOLDER (BipOLar DEpRession I and II. Both studies demonstrated that two doses of quetiapine (300 mg and 600 mg given once daily at bedtime were significantly more effective than placebo, with no increased risk of patients switching into mania. Pooling the two studies, quetiapine was effective for both bipolar I and bipolar II depressions and for patients with (and without a history of rapid cycling. The two doses were comparably effective in both studies. Although the efficacy of quetiapine monotherapy has been established, much additional research is necessary. Further studies are needed to more fully investigate dose-response relationships and comparing quetiapine monotherapy to other mood stabilizers

  17. The four-gate transistor

    Science.gov (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  18. GaAs integrated circuits and heterojunction devices

    Science.gov (United States)

    Fowlis, Colin

    1986-06-01

    The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

  19. [Unipolar versus bipolar depression: clues toward predicting bipolarity disorder].

    Science.gov (United States)

    Ben Abla, T; Ellouze, F; Amri, H; Krid, G; Zouari, A; M'Rad, M F

    2006-01-01

    Bipolar and unipolar disorders share a common depressive clinical manifestation. It is important to distinguish between these two forms of depression for several reasons. First, prescribing antidepressors in monotherapy indubitably worsens the prognosis of bipolarity disorders. Second, postponing the prescription of a mood stabilizer reduces the efficacy of the treatment and multiplies the suicidal risks by two. The object of this study is to reveal the factors that distinguish between unipolar and bipolar depression. This is a retrospective study on patients' files. It includes 186 patients divided according to DSM IV criteria into two groups: patients with bipolar disorder type I or II with a recent depressive episode (123 patients) and patients with recurrent depressive disorder (63 patients). A medical record card was filled-in for every patient. It included socio-demographic data, information about the disorder, family antecedents, CGI score (global clinical impressions), physical comorbidity, substance abuse and personality disorder. In order to sort out the categorization variables, the two groups were compared using chi2 test or Fischer's test. With regard to the quantitative variables, the two groups were compared using Krostal Wallis's test or Ancova. Our study has revealed that bipolar disorder differs significantly from unipolar disorder in the following respects: bipolar disorder is prevalent among men (sex-ratio 2) while unipolar disorder is prevailing among women (sex-ratio 0.8); patients with bipolar disorder are younger than patients with unipolar disorder (38.1 +/- 5 years vs. 49.7 +/- years); the age at the onset of bipolar disorder is earlier than that of unipolar disorder (20.8 +/- 2 years vs. 38.7 +/- 5 years); family antecedents are more important in bipolar patients than in unipolar patients (51.1% vs. 33%). More importantly, bipolar disorder differs from unipolar disorder in the following aspects: The number of suicidal attempts (25.3% vs

  20. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne Johan; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1) con

  1. Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

    Science.gov (United States)

    Pavlov, Y. S.; Surma, A. M.; Lagov, P. B.; Fomenko, Y. L.; Geifman, E. M.

    2016-09-01

    Radiation processing technologies for static and dynamic parameters modification of silicon bipolar semiconductor devices implemented. Devices of different classes with wide range of operating currents (from a few mA to tens kA) and voltages (from a few volts to 8 kV) were processed in large scale including power diodes and thyristors, high-frequency bipolar and IGBT transistors, fast recovery diodes, pulsed switching diodes, precise temperature- compensated Zener diodes (in general more than fifty 50 device types), produced by different enterprises. The necessary changes in electrical parameters and characteristics of devices caused by formation in the device structures of electrically active and stable in the operating temperature range sub-nanoscale recombination centres. Technologies implemented in the air with high efficiency and controllability, and are an alternative to diffusion doping of Au or Pt, γ-ray, proton and low-Z ion irradiation.

  2. Creativity in familial bipolar disorder.

    Science.gov (United States)

    Simeonova, Diana I; Chang, Kiki D; Strong, Connie; Ketter, Terence A

    2005-11-01

    Studies have demonstrated relationships between creativity and bipolar disorder (BD) in individuals, and suggested familial transmission of both creativity and BD. However, to date, there have been no studies specifically examining creativity in offspring of bipolar parents and clarifying mechanisms of intergenerational transmission of creativity. We compared creativity in bipolar parents and their offspring with BD and bipolar offspring with attention-deficit/hyperactivity disorder (ADHD) with healthy control adults and their children. 40 adults with BD, 20 bipolar offspring with BD, 20 bipolar offspring with ADHD, and 18 healthy control parents and their healthy control children completed the Barron-Welsh Art Scale (BWAS), an objective measure of creativity. Adults with BD compared to controls scored significantly (120%) higher on the BWAS Dislike subscale, and non-significantly (32%) higher on the BWAS Total scale. Mean BWAS Dislike subscale scores were also significantly higher in offspring with BD (107% higher) and offspring with ADHD (91% higher) than in healthy control children. Compared to healthy control children, offspring with BD had 67% higher and offspring with ADHD had 40% higher BWAS Total scores, but these differences failed to reach statistical significance when adjusted for age. In the bipolar offspring with BD, BWAS Total scores were negatively correlated with duration of illness. The results of this study support an association between BD and creativity and contribute to a better understanding of possible mechanisms of transmission of creativity in families with genetic susceptibility for BD. This is the first study to show that children with and at high risk for BD have higher creativity than healthy control children. The finding in children and in adults was related to an enhanced ability to experience and express dislike of simple and symmetric images. This could reflect increased access to negative affect, which could yield both benefits

  3. Schema therapy for bipolar disorder: a conceptual model and future directions.

    Science.gov (United States)

    Hawke, Lisa D; Provencher, Martin D; Parikh, Sagar V

    2013-05-15

    Schema therapy (ST) is an integrative form of psychotherapy developed for complex, chronic psychological disorders with a characterlogical underpinning. Bipolar disorder is just such a disorder--complex and often comorbid, with demonstrated stable cognitive and personality features that complicate the course of illness. This article presents the reasons justifying the application of ST to bipolar disorder and proposes a treatment rationale and future directions for treatment and research. If well adapted to the characteristics of bipolar disorder, ST might prove to be an effective adjunctive psychotherapy option that attenuates emotional reactivity, reduces symptoms and improves quality of life.

  4. Brainstorm: occupational choice, bipolar illness and creativity.

    Science.gov (United States)

    Tremblay, Carol Horton; Grosskopf, Shawna; Yang, Ke

    2010-07-01

    Although economists have analyzed earnings, unemployment, and labor force participation for those with bipolar illness, occupational choice has yet to be explored. Psychological and medical studies often suggest an association between bipolar illness and creative achievement, but they tend to focus on eminent figures, case studies, or small samples. We seek to examine occupational creativity of non-eminent individuals with bipolar disorder. We use Epidemiologic Catchment Area data to estimate a multinomial logit model matched to an index of occupational creativity. Those with bipolar illness appear to be disproportionately concentrated in the most creative occupational category. Nonparametric kernel density estimates reveal that the densities of the occupational creativity variable for the bipolar and non-bipolar individuals significantly differ in the ECA data, and suggest that the probability of engaging in creative activities on the job is higher for bipolar than non-bipolar workers.

  5. Imunologia do transtorno bipolar Immunology of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Izabela Guimarães Barbosa

    2009-01-01

    Full Text Available OBJETIVO: Pesquisas recentes têm implicado fatores imunes na patogênese de diversos transtornos neuropsiquiátricos. O objetivo do presente trabalho é revisar os trabalhos que investigaram a associação entre transtorno bipolar e alterações em parâmetros imunes. MÉTODOS: Artigos que incluíam as palavras-chave: "bipolar disorder", "mania", "immunology", "cytokines", "chemokines", "interleukins", "interferon" e "tumor necrosis factor" foram selecionados em uma revisão sistemática da literatura. As bases de dados avaliadas foram MedLine e Scopus, entre os anos de 1980 e 2008. RESULTADOS: Foram identificados 28 trabalhos que estudaram alterações imunes em pacientes com transtorno bipolar. Seis artigos investigaram genes relacionados à resposta imune; cinco, autoanticorpos; quatro, populações leucocitárias; 13, citocinas e/ou moléculas relacionadas à resposta imune e seis, leucócitos de pacientes in vitro. CONCLUSÕES: Embora haja evidências na literatura correlacionando o transtorno bipolar a alterações imunes, os dados não são conclusivos. O transtorno bipolar parece estar associado a níveis mais elevados de autoanticorpos circulantes, assim como à tendência à ativação imune com produção de citocinas pró-inflamatórias e redução de parâmetros anti-inflamatórios.OBJECTIVE: Emerging research has implicated immune factors in the pathogenesis of a variety of neuropsychiatric disorders. The objective of the present paper is to review the studies that investigated the association between bipolar disorder and immune parameters. METHODS: Papers that included the keywords "bipolar to disorder", "mania", "immunology", "cytokines", "chemokines", "interleukins", "interferon" and "tumor necrosis factor" were selected in a systematic review of the literature. The evaluated databases were MedLine and Scopus in the period between 1980 and 2008. RESULTS: Twenty eight works were found. Six studies investigated immune response

  6. Psychopharmacology of pediatric bipolar disorder.

    Science.gov (United States)

    Hamrin, Vanya; Iennaco, Joanne DeSanto

    2010-07-01

    This comprehensive literature review incorporates research studies evaluating the effectiveness of psychotropic medications in children and adolescents with pediatric bipolar disorder. Research articles were obtained using Medline. Open-label studies, prospective and retrospective chart reviews and randomized controlled trials evaluating the effectiveness of medication in pediatric bipolar disorder with greater than ten subjects are included in this article. Antipsychotics, anticonvulsants and lithium as monotherapy, as well as their use in combination treatment, were evaluated to determine their effectiveness in pediatric bipolar disorder. Clinical recommendations of medication and management strategies are made from a synthesis of the data. In addition, adherence concerns caused by adverse effects and nonresponse as they impact physical and mental health are addressed.

  7. Bipolar illness, creativity, and treatment.

    Science.gov (United States)

    Rothenberg, A

    2001-01-01

    There have been in recent years increasing claims in both popular and professional literature for a connection between bipolar illness and creativity. A review of studies supporting this claim reveals serious flaws in sampling, methodology, presentation of results, and conclusions. Although there is therefore no evidence for etiological or genetic linkages, it is still necessary to explain interrelationships in those creative persons suffering from the illness. Examples of the work in progress of artists with bipolar disorder, Jackson Pollock and Edvard Munch, illustrate the use of healthy and adaptive creative cognition--janusian and homospatial processes--in the former's breakthrough conception during an improvement phase in treatment leading to the development of the Abstract Expressionist Movement and in the latter's transformation of an hallucination into his famous artwork "The Scream." Treatment options that do not produce cognitive effects are important for creative persons with bipolar disorder.

  8. Is bipolar always bipolar? Understanding the controversy on bipolar disorder in children

    Science.gov (United States)

    Grimmer, Yvonne; Hohmann, Sarah

    2014-01-01

    Dramatically increasing prevalence rates of bipolar disorder in children and adolescents in the United States have provoked controversy regarding the boundaries of manic symptoms in child and adolescent psychiatry. The serious impact of this ongoing debate on the treatment of affected children is reflected in the concomitant increase in prescription rates for antipsychotic medication. A key question in the debate is whether this increase in bipolar disorder in children and adolescents is based on a better detection of early-onset bipolar disorder—which can present differently in children and adolescents—or whether it is caused by an incorrect assignment of symptoms which overlap with other widely known disorders. So far, most findings suggest that the suspected symptoms, in particular chronic, non-episodic irritability (a mood symptom presenting with easy annoyance, temper tantrums and anger) do not constitute a developmental presentation of childhood bipolar disorder. Additional research based on prospective, longitudinal studies is needed to further clarify the developmental trajectories of bipolar disorder and the diagnostic status of chronic, non-episodic irritability. PMID:25580265

  9. Is bipolar always bipolar? Understanding the controversy on bipolar disorder in children.

    Science.gov (United States)

    Grimmer, Yvonne; Hohmann, Sarah; Poustka, Luise

    2014-01-01

    Dramatically increasing prevalence rates of bipolar disorder in children and adolescents in the United States have provoked controversy regarding the boundaries of manic symptoms in child and adolescent psychiatry. The serious impact of this ongoing debate on the treatment of affected children is reflected in the concomitant increase in prescription rates for antipsychotic medication. A key question in the debate is whether this increase in bipolar disorder in children and adolescents is based on a better detection of early-onset bipolar disorder-which can present differently in children and adolescents-or whether it is caused by an incorrect assignment of symptoms which overlap with other widely known disorders. So far, most findings suggest that the suspected symptoms, in particular chronic, non-episodic irritability (a mood symptom presenting with easy annoyance, temper tantrums and anger) do not constitute a developmental presentation of childhood bipolar disorder. Additional research based on prospective, longitudinal studies is needed to further clarify the developmental trajectories of bipolar disorder and the diagnostic status of chronic, non-episodic irritability.

  10. Light Emitting Transistors of Organic Single Crystals

    Science.gov (United States)

    Iwasa, Yoshihiro

    2009-03-01

    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  11. Low Power Band to Band Tunnel Transistors

    Science.gov (United States)

    2010-12-15

    the E-field and tunneling at the source- pocket junction you form a parasitic NPN + transistor and the injection mechanism of carriers into the...hypothesis that the 1000 ° C, 5s anneal split lead to a very wide pocket and the accidental formation of a NPN + transistor , while the 1000 ° C, 1s anneal...Low Power Band to Band Tunnel Transistors Anupama Bowonder Electrical Engineering and Computer Sciences University of California at Berkeley

  12. Single-transistor-clocked flip-flop

    Science.gov (United States)

    Zhao, Peiyi; Darwish, Tarek; Bayoumi, Magdy

    2005-08-30

    The invention provides a low power, high performance flip-flop. The flip-flop uses only one clocked transistor. The single clocked transistor is shared by the first and second branches of the device. A pulse generator produces a clock pulse to trigger the flip-flop. In one preferred embodiment the device can be made as a static explicit pulsed flip-flop which employs only two clocked transistors.

  13. Superconducting Josephson vortex flow transistors

    CERN Document Server

    Tavares, P A C

    2002-01-01

    The work reported in this thesis focuses on the development of high-temperature superconducting Josephson vortex-flow transistors (JVFTs). The JVFT is a particular type of superconducting transistor, i.e. an electromagnetic device capable of delivering gain while keeping the control and output circuits electrically isolated. Devices were fabricated from (100) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta thin films grown by Pulsed Laser Deposition on 24 deg magnesium oxide and strontium titanate bicrystals. The design of the JVFTs was guided by numerical simulations and the devices were optimised for current gain. Improvements were made to the fabrication process in order to accurately pattern the small structures required. The devices exhibited current gains higher than 60 in liquid nitrogen. Gains measured at lower temperatures were significantly higher. As part of the work a data acquisition suite was developed for the characterisation of three-terminal devices and, in particular, of JVFTs.

  14. Bipolar dislocation of the clavicle

    Directory of Open Access Journals (Sweden)

    Wei Jiang

    2012-01-01

    Full Text Available Bipolar dislocation of the clavicle at acromioclavicular and sternoclavicular joint is an uncommon traumatic injury. The conservative treatments adopted in the past is associated with redislocation dysfunction and deformity. A 41 years old lady with bipolar dislocation of right shoulder is treated surgically by open reduction and internal fixation by oblique T-plate at sternoclavicular joint and Kirschner wire stabilization at acromioclavicular joint. The patient showed satisfactory recovery with full range of motion of the right shoulder and normal muscular strength. The case reported in view of rarity and at 2 years followup.

  15. Silicon based tunneling devices combined with silicon-on-insulator for ultra-large-scale integration

    Science.gov (United States)

    Aydin, Cagri

    2005-07-01

    The continuing device miniaturization in silicon technology to the nanoscale regime opens new avenues for Si-integrable quantum tunneling devices. This thesis describes our study of three novel Si-based tunneling devices: The multiemitter tunneling heterojunction bipolar transistor (MT-HBT), the lateral interband tunneling transistor (LITT) and the ultrathin silicon-on-insulator (SOI) vertical tunneling transistor (VTT). In the Si/SiGe npn MT-HBT, interband tunneling in a heavily doped, reverse biased emitter-base junction supplies the controlling current, while the other forward biased emitter injects the collector current. Despite the lack of a true base contact, the device operates as a normal HBT with high current gain, and the emitter symmetry leads to logic functionality in a single device. Interband tunneling in silicon, which has an indirect bandgap, requires momentum transfer from either phonons or impurities and is not well understood---our devices provide an experimental testbed for existing theory. Interband tunneling is, again, the underlying principle of our LITT devices, where the source and drain form a heavily-doped lateral pn junction in a thin Si film on an SOI substrate. We observe control of the reverse-bias tunneling current under drain bias by a gate voltage of either bias polarity. Systematic current-voltage measurements, together with numerical device simulations, show that in first approximation the drain current depends on the maximum junction electric field. The VTT in SOI is a resonant tunneling device in a transistor geometry: carriers tunnel from the doped gate through an ultrathin gate oxide into the Si quantum well channel and are extracted laterally. The devices show good transistor characteristics when operated in standard transistor mode, and backgate modulation of the tunneling current when operated in the vertical tunneling mode at low temperature. In particular, we observe structure in the gate current due to resonant

  16. Mapping brain activity with flexible graphene micro-transistors

    CERN Document Server

    Blaschke, Benno M; Guimerà-Brunet, Anton; Weinert, Julia; Rousseau, Lionel; Heimann, Axel; Drieschner, Simon; Kempski, Oliver; Villa, Rosa; Sanchez-Vives, Maria V; Garrido, Jose A

    2016-01-01

    Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future gene...

  17. Mapping brain activity with flexible graphene micro-transistors

    Science.gov (United States)

    Blaschke, Benno M.; Tort-Colet, Núria; Guimerà-Brunet, Anton; Weinert, Julia; Rousseau, Lionel; Heimann, Axel; Drieschner, Simon; Kempski, Oliver; Villa, Rosa; Sanchez-Vives, Maria V.; Garrido, Jose A.

    2017-06-01

    Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future generation of in vivo recording implants.

  18. Bipolar depression in children and adolescents.

    Science.gov (United States)

    DeFilippis, Melissa S; Wagner, Karen Dineen

    2013-08-01

    Children and adolescents with bipolar disorder may have depression as the presenting mood state. It is important for clinicians to distinguish between unipolar and bipolar depression in youth. Depressive episodes are common during the course of bipolar illness in children and adolescents. Evidence-based treatments are needed to guide clinicians' treatment decisions for youth with bipolar depression. This article reviews the prevalence, diagnosis, course, and treatment of bipolar depression in youth, and emphasizes the need for large, controlled treatment studies in the pediatric population.

  19. Carbon composite bipolar plate for high-temperature proton exchange membrane fuel cells (HT-PEMFCs)

    Science.gov (United States)

    Lee, Dongyoung; Lee, Dai Gil

    2016-09-01

    A carbon/epoxy composite bipolar plate is an ideal substitute for the brittle graphite bipolar plate for lightweight proton exchange membrane fuel cells (PEMFCs) because of its high specific strength and stiffness. However, conventional carbon/epoxy composite bipolar plates are not applicable for high-temperature PEMFCs (HT-PEMFCs) because these systems are operated at higher temperatures than the glass transition temperatures of conventional epoxies. Therefore, in this study, a cyanate ester-modified epoxy is adopted for the development of a carbon composite bipolar plate for HT-PEMFCs. The composite bipolar plate with exposed surface carbon fibers is produced without any surface treatments or coatings to increase the productivity and is integrated with a silicone gasket to reduce the assembly cost. The developed carbon composite bipolar plate exhibits not only superior electrical properties but also high thermo-mechanical properties. In addition, a unit cell test is performed, and the results are compared with those of the conventional graphite bipolar plate.

  20. Modeling the response of ON and OFF retinal bipolar cells during electric stimulation.

    Science.gov (United States)

    Werginz, P; Benav, H; Zrenner, E; Rattay, F

    2015-06-01

    Retinal implants allowing blind people suffering from diseases like retinitis pigmentosa and macular degeneration to regain rudimentary vision are struggling with several obstacles. One of the main problems during external electric stimulation is the co-activation of the ON and OFF pathways which results in mutual impairment. In this study the response of ON and OFF cone retinal bipolar cells during extracellular electric stimulation from the subretinal space was examined. To gain deeper insight into the behavior of these cells sustained L-type and transient T-type calcium channels were integrated in the synaptic terminals of reconstructed 3D morphologies of ON and OFF cone bipolar cells. Intracellular calcium concentration in the synaptic regions of the model neurons was investigated as well since calcium influx is a crucial parameter for cell-to-cell activity between bipolar cells and retinal ganglion cells. It was shown that monophasic stimulation results in significant different calcium concentrations in the synaptic terminals of ON and OFF bipolar cells. Intracellular calcium increased to values up to fourfold higher in the OFF bipolar model neuron in comparison to the ON bipolar cell. Furthermore, geometric properties strongly influence the activation of bipolar cells. Monophasic, biphasic, single and repetitive pulses with similar lengths, amplitudes and polarities were applied to the two model neurons. Copyright © 2014 The Authors. Published by Elsevier Ltd.. All rights reserved.