WorldWideScience

Sample records for bipolar junction transistors

  1. Modeling of charge transport in ion bipolar junction transistors.

    Science.gov (United States)

    Volkov, Anton V; Tybrandt, Klas; Berggren, Magnus; Zozoulenko, Igor V

    2014-06-17

    Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled delivery in a highly complex manner. One class of ionic transistors, the ion bipolar junction transistors (IBJTs), is especially attractive for these applications because these transistors are functional at physiological conditions and have been employed to modulate the delivery of neurotransmitters to regulate signaling in neuronal cells. Further, the first integrated complementary ionic circuits were recently developed on the basis of these ionic transistors. However, a detailed understanding of the device physics of these transistors is still lacking and hampers further development of components and circuits. Here, we report on the modeling of IBJTs using Poisson's and Nernst-Planck equations and the finite element method. A two-dimensional model of the device is employed that successfully reproduces the main characteristics of the measurement data. On the basis of the detailed concentration and potential profiles provided by the model, the different modes of operation of the transistor are analyzed as well as the transitions between the different modes. The model correctly predicts the measured threshold voltage, which is explained in terms of membrane potentials. All in all, the results provide the basis for a detailed understanding of IBJT operation. This new knowledge is employed to discuss potential improvements of ion bipolar junction transistors in terms of miniaturization and device parameters.

  2. Photovoltaic Cells Improvised With Used Bipolar Junction Transistors

    International Nuclear Information System (INIS)

    Akintayo, J. A

    2002-01-01

    The understanding of the underlying principle that the solar cell consists of a p-n junction is exploited to adapt the basic NPN or PNP Bipolar Junction Transistors (BJT) to serve as solar cells. In this mode the in improvised solar cell have employed just the emitter and the base sections with an intact emitter/base junction as the active PN area. The improvised devices tested screened and sorted are wired up in strings, blocks and modules. The photovoltaic modules realised tested as close replica of solar cells with output voltage following insolation level. Further work need be done on the modules to make them generate usable levels of output voltage and current

  3. Single-event burnout of power bipolar junction transistors

    International Nuclear Information System (INIS)

    Titus, J.L.; Johnson, G.H.; Schrimpf, R.D.; Galloway, K.F.

    1991-01-01

    Experimental evidence of single-event burnout of power bipolar junctions transistors (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. In this paper the experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment

  4. The effect and mechanism of the bipolar junction transistor in different temperature

    International Nuclear Information System (INIS)

    Wang Dong; Lu Wu; Ren Diyuan; Li Aiwu; Kuang Zhibing

    2007-01-01

    The annealing-effect of bipolar junction transistor in different temperature is investigated. It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealing-effect of the different type transistor is dissimilar. The possible mechanism is discussed. (authors)

  5. Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design

    International Nuclear Information System (INIS)

    Kennedy, E.J.; Alley, G.T.; Britton, C.L. Jr.; Skubic, P.L.; Gray, B.; Wu, A.

    1990-01-01

    Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier

  6. Radiation effect of doping and bias conditions on NPN bipolar junction transistors

    International Nuclear Information System (INIS)

    Xi Shanbin; Wang Yiyuan; Xu Fayue; Zhou Dong; Li Ming; Wang Fei; Wang Zhikuan; Yang Yonghui; Lu Wu

    2011-01-01

    In this paper,we investigate 60 Co γ-ray irradiation effects and annealing behaviors of NPN bipolar junction transistors of the same manufacturing technology but different doping concentrations. The transistors of different doping concentrations differ in responses of the radiation effect. More degradation was observed with the transistors of low concentration-doped NPN transistors than the high concentration-doped NPN transistors. The results also demonstrate that reverse-biased transistors are more sensitive to radiation than the forward-biased ones. Mechanisms of the radiation responses are analyzed. (authors)

  7. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    International Nuclear Information System (INIS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-01-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  8. Neutron Radiation Effect On 2N2222 And NTE 123 NPN Silicon Bipolar Junction Transistors

    International Nuclear Information System (INIS)

    Oo, Myo Min; Rashid, N K A Md; Hasbullah, N F; Karim, J Abdul; Zin, M R Mohamed

    2013-01-01

    This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region

  9. Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

    Directory of Open Access Journals (Sweden)

    OO Myo Min

    2014-01-01

    Full Text Available Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.

  10. The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

    Science.gov (United States)

    Mimila-Arroyo, J.

    2017-06-01

    In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

  11. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

    Science.gov (United States)

    Deen, M. Jamal; Pascal, Fabien

    2003-05-01

    For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

  12. An improved bipolar junction transistor model for electrical and radiation effects

    International Nuclear Information System (INIS)

    Kleiner, C.T.; Messenger, G.C.

    1982-01-01

    The use of bipolar technology in hardened electronic design requires an in-depth understanding of how the Bipolar Junction Transistor (BJT) behaves under normal electrical and radiation environments. Significant improvements in BJT process technology have been reported, and the successful use of sophisticated Computer Aided Design (CAD) tools has aided implementation with respect to specific families of hardened devices. The most advanced BJT model used to date is the Improved Gummel-Poon (IGP) model which is used in CAA programs such as the SPICE II and SLICE programs. The earlier Ebers-Moll model (ref 1 and 2) has also been updated to compare with the older Gummel-Poon model. This paper describes an adaptation of an existing computer model which incorporates the best features of both models into a new, more accurate model called the Improved Bipolar Junction Transistor model. This paper also describes a unique approach to data reduction for the B(I /SUB c/) and V /SUB BE/(ACT) vs I /SUB c/characterizations which has been successfully programmed in Basic using a Commodore PET computer. This model is described in the following sections

  13. Gamma Irradiation Performance Tests of the Bipolar Junction Transistor (BJT) for Medical Dosimetry Purposes

    International Nuclear Information System (INIS)

    Nazififard, Mohammad; Suh, Kune Y.; Faghihi, Reyhaneh; Norov, Enkhbat

    2014-01-01

    Two basic radiation damage mechanisms may affect semiconductor devices which are Displacement damage and Ionization damage. In displacement damage mechanism, the incident radiation displaces silicon atoms from their lattice sites. The resulting defects alter the electronic characteristics of the crystal. In ionization damage mechanism, the absorbed energy by electronic ionization in insulating layers liberates charge carriers, which diffuse or drift to other locations where they are trapped, leading to unintended concentrations of charge and, as a consequence, parasitic fields. Both mechanisms are important in detectors, transistors and integrated circuits. Hardly a system is immune to either one phenomenon and most are sensitive to both. This paper investigates the behavior of Bipolar Junction Transistors (BJTs), exposed to radiation in order to establish their applicability in a radiation environment

  14. Gamma Irradiation Performance Tests of the Bipolar Junction Transistor (BJT) for Medical Dosimetry Purposes

    Energy Technology Data Exchange (ETDEWEB)

    Nazififard, Mohammad; Suh, Kune Y. [PHILOSOPHIA, Inc., Seoul (Korea, Republic of); Faghihi, Reyhaneh [Kashan Univ. of Medical Science, Kashan (Iran, Islamic Republic of); Norov, Enkhbat [POSTECH, Pohang (Korea, Republic of)

    2014-05-15

    Two basic radiation damage mechanisms may affect semiconductor devices which are Displacement damage and Ionization damage. In displacement damage mechanism, the incident radiation displaces silicon atoms from their lattice sites. The resulting defects alter the electronic characteristics of the crystal. In ionization damage mechanism, the absorbed energy by electronic ionization in insulating layers liberates charge carriers, which diffuse or drift to other locations where they are trapped, leading to unintended concentrations of charge and, as a consequence, parasitic fields. Both mechanisms are important in detectors, transistors and integrated circuits. Hardly a system is immune to either one phenomenon and most are sensitive to both. This paper investigates the behavior of Bipolar Junction Transistors (BJTs), exposed to radiation in order to establish their applicability in a radiation environment.

  15. Technique for electronic measurement of semi-reduction layer using bipolar transistor of junction

    International Nuclear Information System (INIS)

    Santos, Luiz A.P.; Barros, Fabio R.; Santos, Marcus A.P.; Monte, David S.; Santos, Jose A.P.

    2014-01-01

    Recommendations of the International Commission on Radiological Protection (ICRP), the World Health Organization (WHO) and also of the International Atomic Energy Agency (IAEA) suggest equipment for X-rays diagnosis are checked for conformance to their parameters, such as Layer Semi-Reduction (CSR). The importance of verification of diagnostic radiology in parameters is because of have records that forces patients undergoing radiation doses in some clinics, up to 300% the reference values suggested by international agencies which doses are considered unnecessary, and even harmful, either because of physical or variable greatness of being out of control nominal specification, or the fact of having to repeat the radiographs. In this context, the purpose of this study was an innovative methodology that is the use of bipolar transistor junction (TBJ) to measure the aluminum CSR in diagnostic X-ray equipment beams. Although the TBJ be a device invented in the last century, only in recent years have explored their potential as X-ray sensor applied to diagnosis. The study indicates that the tested device can operating the detection of X-rays is properly polarized with electrical signals that can detect interference of the interaction of X-ray photons with the PN junction formed by the base and emitter terminals. The result of the developed technique was compared to CSR measurements obtained with detection systems standards and it was found that the BJT provides values for aluminum CSR relative errors less than 5%

  16. A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

    Science.gov (United States)

    Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2018-04-01

    We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

  17. Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

    Science.gov (United States)

    Chen, Dakai; Ladbury Raymond; LaBel, Kenneth; Topper, Alyson; Ladbury, Raymond; Triggs, Brian; Kazmakites, Tony

    2012-01-01

    We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of 3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively.

  18. Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

    International Nuclear Information System (INIS)

    Witczak, S.C.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The combined effects of ionizing radiation and hot-carrier stress on the current gain of npn bipolar junction transistors were investigated. The analysis was carried out experimentally by examining the consequences of interchanging the order in which the two stress types were applied to identical transistors which were stressed to various levels of damage. The results indicate that the hot-carrier response of the transistor is improved by radiation damage, whereas hot-carrier damage has little effect on subsequent radiation stress. Characterization of the temporal progression of hot-carrier effects revealed that hot-carrier stress acts initially to reduce excess base current and improve current gain in irradiated transistors. PISCES simulations show that the magnitude of the peak electric-field within the emitter-base depletion region is reduced significantly by net positive oxide charges induced by radiation. The interaction of the two stress types is explained in a qualitative model based on the probability of hot-carrier injection determined by radiation damage and on the neutralization and compensation of radiation-induced positive oxide charges by injected electrons. The result imply that a bound on damage due to the combined stress types is achieved when hot-carrier stress precedes any irradiation

  19. MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection.

    Science.gov (United States)

    Yuan, Heng; Kwon, Hyurk-Choon; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kang, Shin-Won

    2011-10-15

    In this study, we propose a novel biosensor based on a gated lateral bipolar junction transistor (BJT) for biomaterial detection. The gated lateral BJT can function as both a BJT and a metal-oxide-semiconductor field-effect transistor (MOSFET) with both the emitter and source, and the collector and drain, coupled. C-reactive protein (CRP), which is an important disease marker in clinical examinations, can be detected using the proposed device. In the MOSFET-BJT hybrid mode, the sensitivity, selectivity, and reproducibility of the gated lateral BJT for biosensors were evaluated in this study. According to the results, in the MOSFET-BJT hybrid mode, the gated lateral BJT shows good selectivity and reproducibility. Changes in the emitter (source) current of the device for CRP antigen detection were approximately 0.65, 0.72, and 0.80 μA/decade at base currents of -50, -30, and -10 μA, respectively. The proposed device has significant application in the detection of certain biomaterials that require a dilution process using a common biosensor, such as a MOSFET-based biosensor. Copyright © 2011 Elsevier B.V. All rights reserved.

  20. Extreme Temperature Performance of Automotive-Grade Small Signal Bipolar Junction Transistors

    Science.gov (United States)

    Boomer, Kristen; Damron, Benny; Gray, Josh; Hammoud, Ahmad

    2018-01-01

    Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.

  1. Optically switched graphene/4H-SiC junction bipolar transistor

    Science.gov (United States)

    Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.; Brown, Gabriel; Shetu, Shamaita S.

    2018-05-08

    A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.

  2. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

    1998-12-01

    Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

  3. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

    1998-10-01

    Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

  4. Total dose effects on elementary transistors of a comparator in bipolar technology

    International Nuclear Information System (INIS)

    Sarrabayrouse, G.; Guerre, F.X.

    1995-01-01

    In the present work we investigate elementary transistors behaviour of an Integrated Circuit using junction isolation bipolar technology. Polarization conditions and dose rate effects on the main elementary transistor types are analysed. Furthermore, the IC electronic function degradations are studied. Finally, a comparison between the function degradations and the elementary component ones is attempted. (author)

  5. Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design

    Energy Technology Data Exchange (ETDEWEB)

    Kennedy, E J; Gray, B; Wu, A [Dept. of Electrical and Computer Engineering, Univ. of Tennessee, Knoxville, TN (United States); Alley, G T; Britton, Jr, C L [Oak Ridge National Lab., TN (United States); Skubic, P L [Univ. of Oklahoma, Dept. of Physics and Astronomy, Norman, OK (United States)

    1991-10-01

    Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular at currents {<=} 1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier. (orig.).

  6. Dose enhancement effects of X ray radiation in bipolar transistors

    International Nuclear Information System (INIS)

    Chen Panxun

    1997-01-01

    The author has presented behaviour degradation and dose enhancement effects of bipolar transistors in X ray irradiation environment. The relative dose enhancement factors of X ray radiation were measured in bipolar transistors by the experiment methods. The mechanism of bipolar device dose enhancement was investigated

  7. Impact of Process Technologies on ELDRS of Bipolar Transistors

    International Nuclear Information System (INIS)

    Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Zheng Yuzhan

    2010-01-01

    Radiation effects under different dose rates and annealing behaviors of domestic bipolar transistors, with same manufacture technology, were investigated.These transistors include NPN transistors of various emitter area, and LPNP transistors with different doping concentrations in emitter. It is shown that different types of transistors have different radiation responses. The results of NPN transistors show that more degradation occurs at less emitter area. Yet, the results of LPNP transistors demonstrate that transistors with lightly doped emitter are more sensitive to radiation, compared with heavily doped emitter. Finally,the mechanisms of the difference between various radiation responses were analyzed. (authors)

  8. Dose Rate Effects in Linear Bipolar Transistors

    Science.gov (United States)

    Johnston, Allan; Swimm, Randall; Harris, R. D.; Thorbourn, Dennis

    2011-01-01

    Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.

  9. Contribution to the study of fluctuations in transistors (bipolar and junction field effect types); Contribution a l'etude des fluctuations dans les transistors (bipolaires et a effet champ a jonctions)

    Energy Technology Data Exchange (ETDEWEB)

    Borel, J [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1970-07-01

    A brief review of the basic theory of fluctuations in semiconductors is given: shot, thermal low frequency noise. A measuring set has been built to draw noise spectrums (current or voltage). Noise parameters of bipolar transistors are given, mainly noise voltage. Noise current, noise factor and correlation between noise sources are also calculated. Measurements of noise parameters fit well with theory for various devices made in different technologies: alloyed, mesa, planar. Then we give results of the calculation of noise parameters in a FET starting from a simplified model of the device. Low frequency noise is taken into account. Measurements of the parameters and of the spectrum agree fairly well with the theory. Studies of low frequency noise versus temperature give the density and energy of traps located in the space charge layers and an idea of the impurity encountered in these space charge layers. [French] On rappelle les notions de base de la theorie des fluctuations dans les semiconducteurs: bruit de grenaille, bruit thermique, bruit basse frequence. Un appareillage mis au point pour tracer un spectre de bruit est decrit. On presente ensuite le calcul des parametres de bruit d'un transistor bipolaire en insistant plus particulierement sur la tension de bruit ramenee a l'entree de l'element. Le courant de bruit, le facteur de bruit et la correlation entre les sources de bruit sont calcules. La mesure des parametres de bruit est faite sur divers elements realises dans diverses technologies: alliee, mesa et plane. Les mesures confirment tres bien la theorie. On presente ensuite le calcul des parametres de bruit d'un transistor a effet de champ en definissant un schema equivalent simple de l'element. Le calcul theorique des fluctuations basse frequence est aussi fait. La mesure du spectre de bruit confirme tres bien les calculs theoriques. L'etude du bruit basse frequence en fonction de la temperature permet de remonter a la densite et a l'energie des pieges

  10. Effects of emitter junction and passive base region on low dose rate effect in bipolar devices

    International Nuclear Information System (INIS)

    Pershenkov, V.S.; Cherepko, S.V.; Maslov, V.B.; Belyakov, V.V.; Sogoyan, A.V.; Ulimov, N.; Emelianov, V.V.

    1999-01-01

    Low dose rate effect in bipolar devices consists in the increase of peripheral surface recombination current with dose rate decrease. This is due to the more rapid positive oxide charge and interface trap density build-up as the dose rate becomes lower. High dose rate elevated temperature irradiation is proposed for simulation if the low dose rate effect. In the present we tried to separate the effect of radiation-induced charge in the thick passivation oxide over the emitter junction and passive base regions of npn bipolar transistor. Its goal is to improve bipolar device design for use in space environments and nuclear installations. Three experiments were made during this work. 1. Experiment on radiation-induced charge neutralization (RICN) effect under elevated temperature was performed to show transistor degradation dependence on emitter-base bias. 2. High dose rate elevated and room temperature irradiation of bipolar transistors were performed to separate effects of emitter-junction and passive base regions. 3. Pre- and post- irradiation hydrogen ambient storage was used to investigate its effect on radiation-induced charge build-up over the passive base region. All experiments were performed with npn and pnp transistors. (authors)

  11. Wide bandgap collector III-V double heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Flitcroft, R.M.

    2000-10-01

    This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

  12. Bipolar Transistors Can Detect Charge in Electrostatic Experiments

    Science.gov (United States)

    Dvorak, L.

    2012-01-01

    A simple charge indicator with bipolar transistors is described that can be used in various electrostatic experiments. Its behaviour enables us to elucidate links between 'static electricity' and electric currents. In addition it allows us to relate the sign of static charges to the sign of the terminals of an ordinary battery. (Contains 7 figures…

  13. Experiments with Charge Indicator Based on Bipolar Transistors

    Science.gov (United States)

    Dvorak, Leos; Planinsic, Gorazd

    2012-01-01

    A simple charge indicator with bipolar transistors described recently enables us to perform a number of experiments suitable for high-school physics. Several such experiments are presented and discussed in this paper as well as some features of the indicator important for its use in schools, namely its sensitivity and robustness, i.e. the…

  14. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

    KAUST Repository

    Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Li, Ming-Yang; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L.; Lan, Yann-Wen

    2017-01-01

    High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.

  15. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

    KAUST Repository

    Lin, Che-Yu

    2017-10-04

    High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.

  16. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

    Science.gov (United States)

    Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen

    2017-11-28

    High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

  17. Total dose and dose rate models for bipolar transistors in circuit simulation.

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Phillip Montgomery; Wix, Steven D.

    2013-05-01

    The objective of this work is to develop a model for total dose effects in bipolar junction transistors for use in circuit simulation. The components of the model are an electrical model of device performance that includes the effects of trapped charge on device behavior, and a model that calculates the trapped charge densities in a specific device structure as a function of radiation dose and dose rate. Simulations based on this model are found to agree well with measurements on a number of devices for which data are available.

  18. Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

    International Nuclear Information System (INIS)

    Liao, Shu-Hui; Chang, Shu-Tong

    2010-01-01

    This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (T OX ), the emitter width (W E ), and the lateral distance between the edge of the intrinsic base and the reach-through region (L col ) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker T OX gives a larger base-collector breakdown voltage (BV CEO ), whereas reducing the T OX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (f T ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (C CS ) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max ) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

  19. Field emission current from a junction field-effect transistor

    International Nuclear Information System (INIS)

    Monshipouri, Mahta; Abdi, Yaser

    2015-01-01

    Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

  20. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  1. Shootthrough fault protection system for bipolar transistors in a voltage source transistor inverter

    International Nuclear Information System (INIS)

    Wirth, W.F.

    1982-01-01

    Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors

  2. Enchanced total dose damage in junction field effect transistors and related linear integrated circuits

    International Nuclear Information System (INIS)

    Flament, O.; Autran, J.L.; Roche, P.; Leray, J.L.; Musseau, O.

    1996-01-01

    Enhanced total dose damage of Junction Field-effect Transistors (JFETs) due to low dose rate and/or elevated temperature has been investigated for elementary p-channel structures fabricated on bulk and SOI substrates as well as for related linear integrated circuits. All these devices were fabricated with conventional junction isolation (field oxide). Large increases in damage have been revealed by performing high temperature and/or low dose rate irradiations. These results are consistent with previous studies concerning bipolar field oxides under low-field conditions. They suggest that the transport of radiation-induced holes through the oxide is the underlying mechanism. Such an enhanced degradation must be taken into account for low dose rate effects on linear integrated circuits

  3. A photocurrent compensation method of bipolar transistors under high dose rate radiation and its experimental research

    International Nuclear Information System (INIS)

    Yin Xuesong; Liu Zhongli; Li Chunji; Yu Fang

    2005-01-01

    Experiment using discrete bipolar transistors has been performed to verify the effect of the photocurrent compensation method. The theory of the dose rate effects of bipolar transistors and the photocurrent compensation method are introduced. The comparison between the response of hardened and unhardened circuits under high dose rate radiation is discussed. The experimental results show instructiveness to the hardness of bipolar integrated circuits under transient radiation. (authors)

  4. Field emission current from a junction field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

    2015-04-15

    Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

  5. An accurate two-dimensional LBIC solution for bipolar transistors

    Science.gov (United States)

    Benarab, A.; Baudrand, H.; Lescure, M.; Boucher, J.

    1988-05-01

    A complete solution of the diffusion problem of carriers generated by a located light beam in the emitter and base region of a bipolar structure is presented. Green's function method and moment method are used to solve the 2-D diffusion equation in these regions. From the Green's functions solution of these equations, the light beam induced currents (LBIC) in the different junctions of the structure due to an extended generation represented by a rectangular light spot; are thus decided. The equations of these currents depend both on the parameters which characterise the structure, surface states, dimensions of the emitter and the base region, and the characteristics of the light spot, that is to say, the width and the wavelength. Curves illustrating the variation of the various LBIC in the base region junctions as a function of the impact point of the light beam ( x0) for different values of these parameters are discussed. In particular, the study of the base-emitter currents when the light beam is swept right across the sample illustrates clearly a good geometrical definition of the emitter region up to base end of the emitter-base space-charge areas and a "whirl" lateral diffusion beneath this region, (i.e. the diffusion of the generated carriers near the surface towards the horizontal base-emitter junction and those created beneath this junction towards the lateral (B-E) junctions).

  6. The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

    International Nuclear Information System (INIS)

    Wang, Chenhui; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

    2016-01-01

    The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

  7. The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

    2016-09-21

    The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

  8. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

    Science.gov (United States)

    Jin, Liu; Yongguang, Chen; Zhiliang, Tan; Jie, Yang; Xijun, Zhang; Zhenxing, Wang

    2011-10-01

    Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

  9. Simulation of Heating of an Oil-Cooled Insulated Gate Bipolar Transistors Converter Model

    National Research Council Canada - National Science Library

    Ovrebo, Gregory

    2004-01-01

    I used SolidWorks a three-dimensional modeling software, and FloWorks, a fluid dynamics analysis tool, to simulate oil flow and heat transfer in a heat sink structure attached to three insulated gate bipolar transistors...

  10. Study on ionizing radiation effects of bipolar transistor with BPSG films

    International Nuclear Information System (INIS)

    Lu Man; Zhang Xiaoling; Xie Xuesong; Sun Jiangchao; Wang Pengpeng; Lu Changzhi; Zhang Yanxiu

    2013-01-01

    Background: Because of the damage induced by ionizing radiation, bipolar transistors in integrated voltage regulator could induce the current gain degradation and increase leakage current. This will bring serious problems to electronic system. Purpose: In order to ensure the reliability of the device work in the radiation environments, the device irradiation reinforcement technology is used. Methods: The characteristics of 60 Co γ irradiation and annealing at different temperatures in bipolar transistors and voltage regulators (JW117) with different passive films for SiO 2 +BPSG+SiO 2 and SiO 2 +SiN have been investigated. Results: The devices with BPSG film enhanced radiation tolerance significantly. Because BPSG films have better absorption for Na + in SiO 2 layer, the surface recombination rate of base region in a bipolar transistor and the excess base current have been reduced. It may be the main reason for BJT with BPSG film having a good radiation hardness. And annealing experiments at different temperatures after irradiation ensure the reliability of the devices with BPSG films. Conclusions: A method of improving the ionizing irradiation hardness of bipolar transistors is proposed. As well as the linear integrated circuits which containing bipolar transistors, an experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided. (authors)

  11. Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors

    International Nuclear Information System (INIS)

    Witczak, S.C.; Lacoe, R.C.; Galloway, K.F.

    1997-01-01

    The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors

  12. Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature

    International Nuclear Information System (INIS)

    Stork, J.M.C.; Harame, D.L.; Meyerson, B.S.; Nguyen, T.N.

    1989-01-01

    The base profile requirements of Si bipolar junction transistors (BJT's) high-performance operation at liquid-nitrogen temperature are examined. Measurements of thin epitaxial-base polysilicon-emitter n-p-n transistors with increasing base doping show the effects of bandgap narrowing, mobility changes, and carrier freezeout. At room temperature the collector current at low injection is proportional to the integrated base charge, independent of the impurity distribution. At temperatures below 150 Κ, however, minority injection is dominated by the peak base doping because of the greater effectiveness of bandgap narrowing. When the peak doping in the base approaches 10 19 cm -3 , the bandgap difference between emitter and base is sufficiently small that the current gain no longer monotonically decreases with lower temperature but instead shows a maximum as low as 180 Κ. The device design window appears limited at the low-current end by increased base-emitter leakage due to tunneling and by resistance control at the high-current end. Using the measured dc characteristics, circuit delay calculations are made to estimate the performance of an ECL ring oscillator at room and liquid-nitrogen temperatures. It is shown that if the base doping can be raised to 10 19 cm -3 while keeping the base thickness constant, the minimum delay at liquid nitrogen can approach the delay of optimized devices at room temperature

  13. Controlled ion-beam transformation of silicon bipolar microwave power transistor's characteristics

    International Nuclear Information System (INIS)

    Solodukha, V.A.; Snitovskij, Yu.P.

    2015-01-01

    In this article, a method for changing the silicon bipolar microwave power transistor's characteristics in a direct and deliberate manner by modifying the chemical composition at the molybdenum - silicon boundary, the electro-physical properties of molybdenum - silicon contacts, and the electrophysical characteristics of transistor structure areas by the phosphorus ions irradiation of generated ohmic molybdenum - silicon contacts to the transistor emitters is proposed for the first time. The possibilities of this method are investigated and confirmed experimentally. (authors)

  14. Application of accelerated simulation method on NPN bipolar transistors of different technology

    International Nuclear Information System (INIS)

    Fei Wuxiong; Zheng Yuzhan; Wang Yiyuan; Chen Rui; Li Maoshun; Lan Bo; Cui Jiangwei; Zhao Yun; Lu Wu; Ren Diyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    With different radiation methods, ionizing radiation response of NPN bipolar transistors of six different processes was investigated. The results show that the enhanced low dose rate sensitivity obviously exists in NPN bipolar transistors of the six kinds of processes. According to the experiment, the damage of decreasing temperature in step during irradiation is obviously greater than the result of irradiated at high dose rate. This irradiation method can perfectly simulate and conservatively evaluate low dose rate damage, which is of great significance to radiation effects research of bipolar devices. Finally, the mechanisms of the experimental phenomena were analyzed. (authors)

  15. Recent advances in understanding total-dose effects in bipolar transistors

    International Nuclear Information System (INIS)

    Schrimpf, R.D.

    1996-01-01

    Gain degradation in irradiated bipolar transistors can be a significant problem, particularly in linear integrated circuits. In many bipolar technologies, the degradation is greater for irradiation at low dose rates than it is for typical laboratory dose rates. Ionizing radiation causes the base current in bipolar transistors to increase, due to the presence of net positive charge in the oxides covering sensitive device areas and increases in surface recombination velocity. Understanding the mechanisms responsible for radiation-induced gain degradation in bipolar transistors is important in developing appropriate hardness assurance methods. This paper reviews recent modeling and experimental work, with the emphasis on low-dose-rate effects. A promising hardness assurance method based on irradiation at elevated temperatures is described

  16. Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements

    DEFF Research Database (Denmark)

    Vidkjær, Jens; Porra, V.; Zhu, J.

    1992-01-01

    A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis...... results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor....

  17. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    International Nuclear Information System (INIS)

    Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

    2000-01-01

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs DHBT has a low V ON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In 0.03 Ga 0.97 As 0.99 N 0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BV CEO ) is 10 V, consistent with the BV CEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics

  18. Sub-bandgap photonic base current method for characterization of interface states at heterointerfaces in heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Shin, H. T.; Kim, K. H.; Kim, K. S.

    2004-01-01

    In this paper, we propose a novel photonic base current analysis method to characterize the interface states in heterojunction bipolar transistors (HBTs) by using the photonic I-V characteristics under sub-bandgap photonic excitation. For the photonic current-voltage characterization of HBTs, an optical source with a photon energy less than the bandgap energy of Al 0.3 Ga 0.7 As and GaAs (E ph = 0.95 eV g,AlGaAs = 1.79 eV, E g,GaAs = 1.45 eV) is employed for the characterization of the interface states distributed in the photo-responsive energy band (E C - 0.95 ≤ E it ≤ E C ) in emitter-base heterojunction at HBTs. The proposed novel method, which is applied to bipolar junction transistors for the first time, is simple, and an accurate analysis of interface traps in HBTs is possible. By using the photonic base-current and the dark-base-current, we qualitatively analyze the interface trap at the Al 0.3 Ga 0.7 As/GaAs heterojunction interface in HBTs.

  19. Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor

    Science.gov (United States)

    Lew, K. L.; Yoon, S. F.

    2002-04-01

    The Ebers-Moll-like terminal current expressions of a composite collector double heterojunction bipolar transistor (DHBT), which takes the recombination effect into account, have been formulated and an expression for collector-emitter offset voltage [VCE(offset)] has been derived. Factors affecting the VCE(offset) of a composite collector DHBT are investigated and good agreement between the calculated and reported experimental results is shown. Analytical results showed that the transmission coefficient of the base-collector (B-C) junction does not have a considerable effect on the VCE(offset), provided that the B-C junction is of good quality. Thus, despite its asymmetric structure, the VCE(offset) of an optimally designed composite collector DHBT could be as low as that of a conventional DHBT. Hence a composite collector DHBT with low saturation voltage and negligible VCE(offset) is possible if the two conditions: (i) good quality B-C junction, (ii) base transport factor, α≈1, are fulfilled.

  20. Combined effects of 60Co dose and high frequency interferences on a discrete bipolar transistor

    International Nuclear Information System (INIS)

    Doridant, A.; Raoult, J.; Jarrix, S.; Blain, A.; Dusseau, L.; Hoffmann, P.; Chatry, N.; Calvel, P.

    2012-01-01

    This paper concerns bipolar transistors subject to a double aggression: dose irradiation and high-frequency interference. The electromagnetic interference is injected in a contactless way in the near-field zone around the device. Parameters of the interference are power and frequency, the latter largely out of band of operation of the transistors. The output voltage of the transistor exhibits changes, due to rectification and to some extent to current crowding. The importance of the base bias set-up for the type of change occurring in voltage is displayed. After irradiation with a 60 Co source, the voltage output will change under electromagnetic interference but sometimes in an opposite way as initially measured. The impact of the irradiation with respect to electromagnetic susceptibility is highlighted from a physical point of view. Finally preliminary results of simulation for susceptibility prediction are given and a discussion is given on the limits of the transistor model used. (authors)

  1. DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT

    Directory of Open Access Journals (Sweden)

    F. I. Bukashev

    2016-01-01

    Full Text Available Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods. Considered are the structural and schematic circuit controlled rectifier based on bipolar static induction transistor (BSIT, and the criterion of effectiveness controlled rectifiers - equivalent to the voltage drop.Results. Presented are the study results of controlled rectifier layout on BSIT KT698I. It sets the layout operation at an input voltage of 2.0 V at a frequency up to 750 kHz. The efficiency of the studied layouts at moderate current densities as high as 90 % .Offered is optimization of technological route microelectronic controlled rectifier manufacturing including BSIT and integrated bipolar elements of the scheme management.Conclusion. It is proved that the most efficient use of the bipolar static induction transistor occurs at the low voltage controlled rectifiers 350-400 kHz, at frequencies in conjunction with a low-voltage control circuit.It is proved that the increase of the functional characteristics of the converters is connected to the expansion of the input voltage and output current ranges

  2. The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

    International Nuclear Information System (INIS)

    Sah, C.-T.; Jie Binbin

    2009-01-01

    This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impurethin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

  3. One bipolar transistor selector - One resistive random access memory device for cross bar memory array

    Science.gov (United States)

    Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

    2017-09-01

    A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

  4. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

    Science.gov (United States)

    Martí, A; Luque, A

    2015-04-22

    Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

  5. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

    Science.gov (United States)

    2015-02-01

    executed with SolidWorks Flow Simulation , a computational fluid-dynamics code. The graph in Fig. 2 shows the timing and amplitudes of power pulses...defined a convective flow of air perpendicular to the bottom surface of the mounting plate, with a velocity of 10 ft/s. The thermal simulations were...Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module by Gregory K Ovrebo ARL-TR-7210

  6. A novel technique for CAD-optimization of analog circuits with bipolar transistors

    Directory of Open Access Journals (Sweden)

    B. Dimov

    2009-05-01

    Full Text Available In this paper, a novel approach for robust automatic optimization of analog circuits with bipolar transistors is presented. It includes additional formal parameters into the device model cards, which sweep the model parameters smoothly between the different device types. In this way, not only the sizing, but also the choice of the device type is committed to the optimization tool, thus improving the efficiency of the design process significantly.

  7. Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

    International Nuclear Information System (INIS)

    Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

    1991-11-01

    The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

  8. Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

    Science.gov (United States)

    De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

    1996-08-01

    This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

  9. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

    1999-01-01

    Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

  10. Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

    International Nuclear Information System (INIS)

    Fu, S.-I.; Lai, P.-H.; Tsai, Y.-Y.; Hung, C.-W.; Yen, C.-H.; Cheng, S.-Y.; Liu, W.-C.

    2006-01-01

    An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications

  11. Collector modulation in high-voltage bipolar transistor in the saturation mode: Analytical approach

    Science.gov (United States)

    Dmitriev, A. P.; Gert, A. V.; Levinshtein, M. E.; Yuferev, V. S.

    2018-04-01

    A simple analytical model is developed, capable of replacing the numerical solution of a system of nonlinear partial differential equations by solving a simple algebraic equation when analyzing the collector resistance modulation of a bipolar transistor in the saturation mode. In this approach, the leakage of the base current into the emitter and the recombination of non-equilibrium carriers in the base are taken into account. The data obtained are in good agreement with the results of numerical calculations and make it possible to describe both the motion of the front of the minority carriers and the steady state distribution of minority carriers across the collector in the saturation mode.

  12. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. J. [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carroll, M. S. [Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); Carr, S. M. [Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)

    2015-05-18

    We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

  13. ESTIMATION OF THERMAL PARAMETERS OF POWER BIPOLAR TRANSISTORS BY THE METHOD OF THERMAL RELAXATION DIFFERENTIAL SPECTROMETRY

    Directory of Open Access Journals (Sweden)

    V. S. Niss

    2015-01-01

    Full Text Available Thermal performance of electronic devices determines the stability and reliability of the equipment. This leads to the need for a detailed thermal analysis of semiconductor devices. The goal of the work is evaluation of thermal parameters of high-power bipolar transistors in plastic packages TO-252 and TO-126 by a method of thermal relaxation differential spectrometry. Thermal constants of device elements and distribution structure of thermal resistance defined as discrete and continuous spectra using previously developed relaxation impedance spectrometer. Continuous spectrum, based on higher-order derivatives of the dynamic thermal impedance, follows the model of Foster, and discrete to model of Cauer. The structure of sample thermal resistance is presented in the form of siх-chain electro-thermal RC model. Analysis of the heat flow spreading in the studied structures is carried out on the basis of the concept of thermal diffusivity. For transistor structures the area and distribution of the heat flow cross-section are determined. On the basis of the measurements the thermal parameters of high-power bipolar transistors is evaluated, in particular, the structure of their thermal resistance. For all of the measured samples is obtained that the thermal resistance of the layer planting crystal makes a defining contribution to the internal thermal resistance of transistors. In the transition layer at the border of semiconductor-solder the thermal resistance increases due to changes in the mechanism of heat transfer. Defects in this area in the form of delamination of solder, voids and cracks lead to additional growth of thermal resistance caused by the reduction of the active square of the transition layer. Method of thermal relaxation differential spectrometry allows effectively control the distribution of heat flow in high-power semiconductor devices, which is important for improving the design, improve the quality of landing crystals of power

  14. Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Chen, Wei; Yao, Zhibin; Jin, Xiaoming; Liu, Yan; Yang, Shanchao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Wang, Zhikuan [State Key Laboratory of Analog Integrated Circuit, Chongqing 400060 (China)

    2016-09-21

    A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to do experimental validations and studies on the ionizing/displacement synergistic effects in the lateral PNP bipolar transistor. The individual and mixed irradiation experiments of gamma rays and neutrons are accomplished on the transistors. The common emitter current gain, gate sweep characteristics and sub-threshold sweep characteristics are measured after each exposure. The results indicate that under the sequential irradiation of gamma rays and neutrons, the response of the gate-controlled lateral PNP bipolar transistor does exhibit ionizing/displacement synergistic effects and base current degradation is more severe than the simple artificial sum of those under the individual gamma and neutron irradiation. Enough attention should be paid to this phenomenon in radiation damage evaluation. - Highlights: • A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to facilitate the analysis of ionizing/displacement synergistic effects induced by the mixed irradiation of gamma and neutron. • The difference between ionizing/displacement synergistic effects and the simple sum of TID and displacement effects is analyzed. • The physical mechanisms of synergistic effects are explained.

  15. Lateral n-p-n bipolar transistors by ion implantation into semi-insulating GaAs

    International Nuclear Information System (INIS)

    Canfield, P.; Forbes, L.

    1988-01-01

    GaAs bipolar transistors have not seen the major development effort that GaAs MESFETs have due primarily to the short minority carrier lifetimes in GaAs. The short minority carrier lifetimes require that the base region be very thin which, if done by implantation, requires that the doping be high to obtain a well defined base profile. These requirements are very difficult to achieve in GaAs and typically, if high current gain and high speed are desired for a bipolar technology, then heterostructure bipolars are the appropriate technology, although the cost of heterostructure devices will be prohibitive for some time to come. For applications requiring low current gain, more modest fabrication rules can be followed. Lateral bipolars are particularly attractive since they would be easier to fabricate than a planar bipolar or a heterojunction bipolar. Lateral bipolars do not require steps or deep contacts to make contact with the subcollector or highly doped very thin epilayers for the base region and they can draw upon the semi-insulating properties of the GaAs substrates for device isolation. Bipolar transistors are described and shown to work successfully. (author)

  16. Modelling ionising radiation induced defect generation in bipolar oxides with gated diodes

    International Nuclear Information System (INIS)

    Barnaby, H.J.; Cirba, C.; Schrimpf, R.D.; Kosier, St.; Fouillat, P.; Montagner, X.

    1999-01-01

    Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)

  17. An analog front-end bipolar-transistor integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1994-01-01

    Since 1989 the Solenoidal Detector Collaboration (SDC) has been developing a general purpose detector to be operated at the Superconducting Super Collider (SSC). A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDS silicon tracker. The IC was designed and tested at LBL and was fabricated using AT and T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a φ = 10 14 protons/cm 2 have been performed on the JC, demonstrating the radiation hardness of the complementary bipolar process

  18. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir; Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  19. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  20. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  1. Maximizing ion current rectification in a bipolar conical nanopore fluidic diode using optimum junction location.

    Science.gov (United States)

    Singh, Kunwar Pal

    2016-10-12

    The ion current rectification has been obtained as a function of the location of a heterojunction in a bipolar conical nanopore fluidic diode for different parameters to determine the junction location for maximum ion current rectification using numerical simulations. Forward current peaks for a specific location of the junction and reverse current decreases with the junction location due to a change in ion enrichment/depletion in the pore. The optimum location of the heterojunction shifts towards the tip with base/tip diameter and surface charge density, and towards the base with the electrolyte concentration. The optimum location of the heterojunction has been approximated by an equation as a function of pore length, base/tip diameter, surface charge density and electrolyte concentration. The study is useful to design a rectifier with maximum ion current rectification for practical purposes.

  2. A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

    Science.gov (United States)

    Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

    2018-04-01

    We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

  3. Study of an Insulated Gate Bipolar Transistor (IGBT) and its connection in series. Application at a chopper 1500V-5A-10kHz

    International Nuclear Information System (INIS)

    Gros, P.

    1993-01-01

    In the frame of the tokamak ITER (International Thermonuclear Experimental Reactor) we have studied, for neutral particle injection, a converter with at least two static interrupters by Mosfet transistor, bipolar transistor or Insulated Gate Bipolar Transistor (IGBT). After a comparison between these three types of transistors, by the simulating software MICROCAP, a serial of tests has shown the advantages of the IGBT. A command, associated with two IGBT of equivalent characteristics, has given a simple and efficacious solution. The performances are: (1) between two blockages: 50 ns without overvoltage, (2) between two cut-off: 60 ns. 40 figs; 30 refs; 10 annexes

  4. Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Oxland, R K; Rahman, F

    2008-01-01

    This paper reports on the development of effective passivation techniques for improving and stabilizing the characteristics of InP/InGaAs heterojunction bipolar transistors. Two different methods for carrying out sulfur-based surface passivations are compared. These include exposure to gaseous hydrogen sulfide and immersion treatment in an ammonium sulfide solution. The temporal behaviour of effects resulting from such passivation treatments is reported. It is shown that liquid phase passivation has a larger beneficial effect on device performance than gas phase passivation. This is explained in terms of the polarity of passivating species and the exposed semiconductor surface. Finally, device encapsulation in a novel chalcogenide polymer is shown to be effective in preserving the benefits of surface passivation treatments. The relevant properties of this encapsulation material are also discussed

  5. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    International Nuclear Information System (INIS)

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiao Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)

  6. A study of s new power semiconductor insulated gate bipolar transistor (IGBT) characteristics and its application to automotive ignition

    International Nuclear Information System (INIS)

    Rabah, K.V.O.

    1995-05-01

    Assessment has been made of the problem of the on-resistance and temperature effects in the three power transistor combinations, such as Darlington-types or IGBT. The IGBT is a device in which the drain of the MOSFET feeds the bipolar base in monolithic (IC and Power on the same chip) to give it both the MOS and bipolar advantages. The high temperature operating characteristics of the device are discussed and compared to that of power bipolar transistor. Unlike the power bipolar transistor whose operating current density shows current crowding at above forward collector current of 4Amps and forward voltage drop above 0.4V, the IGBT is found to maintain its high current density above forward collector of current 1Amp (or a forward voltage drop above 1.2V). The results also indicate that these devices (IGBTs) can be interdigited (paralleled) without current hogging problems if the forward conduction occurs at forward voltage drops in excess of 1.2V, and this makes it the best candidate for automotive ignition power switches. (author). 20 refs, 10 figs, 1 tab

  7. Effects of microwave pulse-width damage on a bipolar transistor

    International Nuclear Information System (INIS)

    Ma Zhen-Yang; Chai Chang-Chun; Ren Xing-Rong; Yang Yin-Tang; Chen Bin; Zhao Ying-Bo

    2012-01-01

    This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves (HPMs) through the injection approach. The dependences of the microwave damage power, P, and the absorbed energy, E, required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method. A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out. By means of a two-dimensional simulator, ISE-TCAD, the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively. The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different, while only one hot spot exists under the injection of dc pulses. The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy, respectively. The dc pulse damage data may be useful as a lower bound for microwave pulse damage data. (interdisciplinary physics and related areas of science and technology)

  8. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    NARCIS (Netherlands)

    Bruce, S.P.O.; Vandamme, L.K.J.; Rydberg, A.

    1999-01-01

    Transimpedance amplifiers have been used for direct study of current noise in silicon germanium (SiGe) heterojunction bipolar transistors (HBT's) at different biasing conditions. This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when

  9. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    Science.gov (United States)

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  10. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang; Shi, Yumeng; Cheng, Chia Chin; Lu, Li Syuan; Lin, Yung Chang; Tang, Hao-Ling; Tsai, Meng Lin; Chu, Chih Wei; Wei, Kung Hwa; He, Jr-Hau; Chang, Wen Hao; Suenaga, Kazu; Li, Lain-Jong

    2015-01-01

    . Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via

  11. Effects induced by γ-radiation on the noise in junction field-effect transistors belonging to monolithic processes

    International Nuclear Information System (INIS)

    Manfredi, P.F.; Re, V.; Manfredi, P.F.; Speziali, V.; Re, V.; Manfredi, P.F.; Speziali, V.

    1999-01-01

    The effects of γ-rays on the noise characteristics of junction field-effect transistors belonging to three monolithic technologies have been investigated. A substantially different behavior of the radiation-induced noise in N and P -channel JFETs was observed. This may result in interesting design considerations. (authors)

  12. Characterization of ionizing radiation effects in MOS structures by study of bipolar operation; Caracterisation des effets induits par irradiations ionisantes dans des structures MOS a partir de leur fonctionnement en regime bipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Bakhtiar, H. [Univ. Teknologi Malaysia, Dept. of Physics, Johor (Malaysia); Picard, C.; Brisset, C. [CEA Saclay, Lab. d' Electronique et de Technologie de l' Informatique, LETI, 91 - Gif-sur-Yvette (France); Bakhtiar, H.; Hoffmann, A.; Charles, J.P. [Metz Univ., LICM-CLOES-Supelec, 57 (France)

    1999-07-01

    This work presents an original method to characterize radiation effects of micronic transistors. The characterization includes a study of the transistor substrate-drain junction and current gain variation of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages. (author000.

  13. Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model

    Science.gov (United States)

    Goradia, C.; Vaughn, J.; Baraona, C. R.

    1980-01-01

    A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).

  14. Analytical modeling of split-gate junction-less transistor for a biosensor application

    Directory of Open Access Journals (Sweden)

    Shradhya Singh

    2018-04-01

    Full Text Available This paper represents the analytical modeling of split-gate Dielectric Modulated Junction Less Transistor (JLT for label free electrical detection of bio molecules. Some part of the channel region is opened for providing the binding sites for the bio molecules unlike conventional MOSFET which is enclosed with the gate electrode. Due to this open area, the surface potential of this region affected by the charged and neutral bio molecules immobilized to the open region of channel. Surface potential of the channel region obtained by solving two-Dimensional Poisson's equation by potential profile having parabolic nature through channel region using technique called conformal mapping. By deriving the surface potential model, derivation of threshold model can also be done. For the detection of bio molecule, variation in to the threshold voltage due to binding of bio molecule in the gate underlap region is the sensing metric.

  15. High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

    Science.gov (United States)

    Ahmari, David Abbas

    Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

  16. Bipolar-power-transistor-based limiter for high frequency ultrasound imaging systems.

    Science.gov (United States)

    Choi, Hojong; Yang, Hao-Chung; Shung, K Kirk

    2014-03-01

    High performance limiters are described in this paper for applications in high frequency ultrasound imaging systems. Limiters protect the ultrasound receiver from the high voltage (HV) spikes produced by the transmitter. We present a new bipolar power transistor (BPT) configuration and compare its design and performance to a diode limiter used in traditional ultrasound research and one commercially available limiter. Limiter performance depends greatly on the insertion loss (IL), total harmonic distortion (THD) and response time (RT), each of which will be evaluated in all the limiters. The results indicated that, compared with commercial limiter, BPT-based limiter had less IL (-7.7 dB), THD (-74.6 dB) and lower RT (43 ns) at 100 MHz. To evaluate the capability of these limiters, they were connected to a 100 MHz single element transducer and a two-way pulse-echo test was performed. It was found that the -6 dB bandwidth and sensitivity of the transducer using BPT-based limiter were better than those of the commercial limiter by 22% and 140%, respectively. Compared to the commercial limiter, BPT-based limiter is shown to be capable of minimizing signal attenuation, RT and THD at high frequencies and is thus suited for high frequency ultrasound applications. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Heat Removal from Bipolar Transistor by Loop Heat Pipe with Nickel and Copper Porous Structures

    Directory of Open Access Journals (Sweden)

    Patrik Nemec

    2014-01-01

    Full Text Available Loop heat pipes (LHPs are used in many branches of industry, mainly for cooling of electrical elements and systems. The loop heat pipe is a vapour-liquid phase-change device that transfers heat from evaporator to condenser. One of the most important parts of the LHP is the porous wick structure. The wick structure provides capillary force to circulate the working fluid. To achieve good thermal performance of LHP, capillary wicks with high permeability and porosity and fine pore radius are expected. The aim of this work was to develop porous structures from copper and nickel powder with different grain sizes. For experiment copper powder with grain size of 50 and 100 μm and nickel powder with grain size of 10 and 25 μm were used. Analysis of these porous structures and LHP design are described in the paper. And the measurements’ influences of porous structures in LHP on heat removal from the insulated gate bipolar transistor (IGBT have been made.

  18. Heat Removal from Bipolar Transistor by Loop Heat Pipe with Nickel and Copper Porous Structures

    Science.gov (United States)

    Smitka, Martin; Malcho, Milan

    2014-01-01

    Loop heat pipes (LHPs) are used in many branches of industry, mainly for cooling of electrical elements and systems. The loop heat pipe is a vapour-liquid phase-change device that transfers heat from evaporator to condenser. One of the most important parts of the LHP is the porous wick structure. The wick structure provides capillary force to circulate the working fluid. To achieve good thermal performance of LHP, capillary wicks with high permeability and porosity and fine pore radius are expected. The aim of this work was to develop porous structures from copper and nickel powder with different grain sizes. For experiment copper powder with grain size of 50 and 100 μm and nickel powder with grain size of 10 and 25 μm were used. Analysis of these porous structures and LHP design are described in the paper. And the measurements' influences of porous structures in LHP on heat removal from the insulated gate bipolar transistor (IGBT) have been made. PMID:24959622

  19. The Complete Semiconductor Transistor and Its Incomplete Forms

    International Nuclear Information System (INIS)

    Jie Binbin; Sah, C.-T.

    2009-01-01

    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  20. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

    2012-01-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

  1. Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

    2018-06-01

    In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

  2. Electrical responses by effects of molecular adsorption on channel and junctions of carbon nanotube field effect transistors

    International Nuclear Information System (INIS)

    Kang, Donghun; Park, Wanjun

    2008-01-01

    We report the adsorption effect on the electrical transport of nanotube field effect transistors. The source-drain current is monitored separately for the nanotube channel and the metal-nanotube junction under different pressures of ambient air with a blocking passivation. The metal-nanotube junction shows a significant change from p-type to ambipolar upon vacuum pumping, while the nanotube channel changes modestly. The metal-nanotube junction is found to be far more sensitive to the environment than the nanotube channel. We suggest that the adsorption states underneath the blocking layer do not desorb, and thus the positive carriers would not be diluted upon the vacuum pumping. This result is interpreted as the formation of an i-p-i and p-i-p junction with charge transfer by oxygen molecules. (fast track communication)

  3. Influence of the flux density on the radiation damage of bipolar silicon transistors by protons and electrons

    International Nuclear Information System (INIS)

    Bannikov, Y.; Gorin, B.; Kozhevnikov, V.; Mikhnovich, V.; Gusev, L.

    1981-01-01

    It was found experimentally that the radiation damage of bipolar n-p-n transistors increased by a factor of 8--12 when the proton flux density was reduced from 4.07 x 10 10 to 2.5 x 10 7 cm -2 sec -1 . In the case of p-n-p transistors the effect was opposite: there was a reduction in the radiation damage by a factor of 2--3 when the dose rate was lowered between the same limits. A similar effect was observed for electrons but at dose rates three orders of magnitude greater. The results were attributed to the dependences of the radiation defect-forming reactions on the charge state of defects which was influenced by the formation of disordered regions in the case of proton irradiation

  4. Electrical properties of InP/InGaAs heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ouacha, A.

    1993-01-01

    In recent years, there has been considerable interest in indium phosphide (InP) and In-based III-V compounds because of their applications in many electronic and photonic devices. The issues involved in processing high quality InP-based devices have been widely explored during the last decade. Realization of highly reliable, high speed, and long distance fiber-optics communication systems requires good quality of the material growth, characterization techniques and reproducible device processing concepts. All these three elements should be included in the manufacturing sequence in order to produce devices of high quality. Until recently, most of the InP related technologies and advances have been focused around optical fiber communications (1.3-1.55 μm) where Si and GaAs could not compete. The main obstacle to rapid growth of InP based technology in the 80s was the enormous investment and interest of large companies and commercial research organizations in GaAs technology. Supporting and financing InP related devices and material was at best minimal. As a consequence, there has been a much slower perhaps more realistic development curve for non-optical InP-based devices and technologies. InP technology has survived solely on the basic of its technical performance, despite the financial problems. In this thesis, we investigate the static behaviour of InP/InGaAs heterojunction bipolar transistors (HBTs) which have attracted a significant amount of attention. (20 refs., 5 figs., 3 tabs.)

  5. Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    LI,N.Y.; CHANG,PING-CHIH; BACA,ALBERT G.; LAROCHE,J.R.; REN,F.; ARMOUR,E.; SHARPS,P.R.; HOU,H.Q.

    2000-08-01

    The authors demonstrate, for the first time, both functional Pnp AlGaAs/InGaAsN/GaAs (Pnp InGaAsN) and Npn InGaP/InGaAsN/GaAs (Npn InGaAsN) double heterojunction bipolar transistors (DHBTs) using a 1.2 eV In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} as the base layer for low-power electronic applications. The Pnp InGaAsN DHBT has a peak current gain ({beta}) of 25 and a low turn-on voltage (V{sub ON}) of 0.79 V. This low V{sub ON} is {approximately} 0.25 V lower than in a comparable Pnp AlGAAs/GaAs HBT. For the Npn InGaAsN DHBT, it has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in an InGaP/GaAs HBT. A peak {beta} of 7 with nearly ideal I-V characteristics has been demonstrated. Since GaAs is used as the collector of both Npn and Pnp InGaAsN DHBTs, the emitter-collector breakdown voltage (BV{sub CEO}) are 10 and 12 V, respectively, consistent with the BV{sub CEO} of Npn InGaP/GaAs and Pnp AlGaAs/GaAs HBTs of comparable collector thickness and doping level. All these results demonstrate the potential of InGaAsN DHBTs as an alternative for application in low-power electronics.

  6. Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor

    International Nuclear Information System (INIS)

    Ji, In-Hwan; Choi, Young-Hwan; Ha, Min-Woo; Han, Min-Koo; Choi, Yearn-Ik

    2006-01-01

    A new protection circuit employing the collector to emitter voltage (V CE ) sensing scheme for short-circuit withstanding capability of the insulated gate bipolar transistor (IGBT) is proposed and verified by experimental results. Because the current path between the gate and collector can be successfully eliminated in the proposed protection circuit, the power consumption can be reduced and the gate input impedance can be increased. Previous study is limited to dc characteristics. However, experimental results show that the proposed protection circuit successfully reduces the over-current of main IGBT by 80.4% under the short-circuit condition

  7. On the choice of a head element for low-noise bipolar transistor amplifier

    International Nuclear Information System (INIS)

    Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.

    1988-01-01

    The measurement results of equivalent noise charge (ENC) for KT382 transistor depending on detector capacity, formation duration and collector current are given. It is shown that the measurement results for this transistor in good agreement with calculations according to the noise model, time-consuming ENC measurements can be replaced by preliminary transistor rejection according to the distributed base resistance, current gain and simple calculations. In applications in the field of nuclear electronics the KT382 transistor enables to attain the same noise parameters as NE578, NE021 transistors (Japan) and it can be recommended for using as a head element of amplifiers

  8. Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

    Science.gov (United States)

    Shaheed, M. Reaz

    1995-01-01

    Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown

  9. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Science.gov (United States)

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

    2012-06-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

  10. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  11. Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

    Institute of Scientific and Technical Information of China (English)

    Jin Dong-Yue; Zhang Wan-Rong; Chen Liang; Fu Qiang; Xiao Ying; Wang Ren-Qing; Zhao Xin

    2011-01-01

    The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.

  12. Bipolar cell gap junctions serve major signaling pathways in the human retina.

    Science.gov (United States)

    Kántor, Orsolya; Varga, Alexandra; Nitschke, Roland; Naumann, Angela; Énzsöly, Anna; Lukáts, Ákos; Szabó, Arnold; Németh, János; Völgyi, Béla

    2017-08-01

    Connexin36 (Cx36) constituent gap junctions (GJ) throughout the brain connect neurons into functional syncytia. In the retina they underlie the transmission, averaging and correlation of signals prior conveying visual information to the brain. This is the first study that describes retinal bipolar cell (BC) GJs in the human inner retina, whose function is enigmatic even in the examined animal models. Furthermore, a number of unique features (e.g. fovea, trichromacy, midget system) necessitate a reexamination of the animal model results in the human retina. Well-preserved postmortem human samples of this study are allowed to identify Cx36 expressing BCs neurochemically. Results reveal that both rod and cone pathway interneurons display strong Cx36 expression. Rod BC inputs to AII amacrine cells (AC) appear in juxtaposition to AII GJs, thus suggesting a strategic AII cell targeting by rod BCs. Cone BCs serving midget, parasol or koniocellular signaling pathways display a wealth of Cx36 expression to form homologously coupled arrays. In addition, they also establish heterologous GJ contacts to serve an exchange of information between parallel signaling streams. Interestingly, a prominent Cx36 expression was exhibited by midget system BCs that appear to maintain intimate contacts with bistratified BCs serving other pathways. These findings suggest that BC GJs in parallel signaling streams serve both an intra- and inter-pathway exchange of signals in the human retina.

  13. An investigation of group IV alloys and their applications in bipolar transistors

    International Nuclear Information System (INIS)

    Anteney, I.M.

    2000-09-01

    This thesis investigates the use of carbon in group IV alloys and their potential uses in bipolar transistors. The first part of the thesis investigates the ability of carbon to suppress transient enhanced diffusion in SiGe heterojunction bipolar transistors, whilst the second part deals with the impact of carbon incorporation on the electrical properties of polycrystalline silicon and silicon-germanium films. A background doping concentration (10 20 cm -3 ) of C has been introduced into the base of SiGe HBTs with the aim of studying the effects of C on TED of B from the base. An electrical method is used to extract the bandgap narrowing in the base of SiGe and SiGe:C HBTs through measurements of the temperature dependence of I c at different C/B reverse biases. The method is very sensitive to small amounts of dopant out-diffusion from the base and hence is ideal for determining the effect of C on TED. Extracted BGN values of 115meV and 173meV were obtained for the SiGe and SiGe:C HBTs respectively, for a C/B reverse bias of 0V. Increasing the C/B reverse bias to 1V increased the extracted BGN of the SiGe HBT to 145meV, but left the SiGe:C value unchanged. This demonstrates that no parasitic energy barrier exists in the SiGe:C HBT and that TED has been suppressed. The effect of carbon position and concentration has been studied by introducing a peak C concentration of 10 20 cm -3 in the collector and 1.1x10 19 cm -3 or 1.5x10 19 cm -3 C in the base. From these measurements it has been shown that TED is only suppressed in the device with 1.5x10 19 cm -3 C in the base, indicating that a C concentration of 1.5x10 19 cm -3 is needed to suppress TED and that the C needs to be co-located with the B profile. The effects of carbon on the electrical properties of polycrystalline Si and SiGe films have been investigated. The resistivity, Hall mobility (μ H ) and effective carrier concentration (N EFF ) of n- and p-type polySi 1-y C y and polySi 0.82-y Ge 0.18 C y layers

  14. Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

    KAUST Repository

    Kozawa, Daichi

    2016-11-16

    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  15. Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

    KAUST Repository

    Kozawa, Daichi; Pu, Jiang; Shimizu, Ryo; Kimura, Shota; Chiu, Ming-Hui; Matsuki, Keiichiro; Wada, Yoshifumi; Sakanoue, Tomo; Iwasa, Yoshihiro; Li, Lain-Jong; Takenobu, Taishi

    2016-01-01

    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  16. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    CHANG,PING-CHIH; LI,N.Y.; BACA,ALBERT G.; MONIER,C.; LAROCHE,J.R.; HOU,H.Q.; REN,F.; PEARTON,S.J.

    2000-08-01

    The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

  17. Generation of short electrical pulses based on bipolar transistorsny

    Directory of Open Access Journals (Sweden)

    M. Gerding

    2004-01-01

    Full Text Available A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7V at 50Ω. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become forward biased. The resulting fast switch-off edge of the transistor’s output signal is the basis for the pulse generation. The fast switching of the transistor occurs as a result of the minority carriers that have been injected and stored across the base-collector junction under forward bias conditions. If the saturated transistor is suddenly reverse biased the pn-junction will appear as a low impedance until the stored charge is depleted. Then the impedance will suddenly increase to its normal high value and the flow of current through the junction will turn to zero, abruptly. A differentiation of the output signal of the transistor results in two short pulses with opposite polarities. The differentiating circuit is implemented by a transmission line network, which mainly acts as a high pass filter. Both the transistor technology (pnp or npn and the phase of the transfer function of the differentating circuit influence the polarity of the output pulses. The pulse duration depends on the transistor parameters as well as on the transfer function of the pulse shaping network. This way of generating short electrical pulses is a new alternative for conventional comb generators based on steprecovery diodes (SRD. Due to the three-terminal structure of the transistor the isolation problem between the input and the output signal of the transistor network is drastically simplified. Furthermore the transistor is an active element in contrast to a SRD, so that its current gain can be used to minimize the power of the driving signal.

  18. Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Puzanov, A. S.; Obolenskiy, S. V., E-mail: obolensk@rf.unn.ru; Kozlov, V. A. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.

  19. Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor

    International Nuclear Information System (INIS)

    Doridant, A.; Jarrix, S.; Raoult, J.; Blain, A.; Dusseau, L.; Chatry, N.; Calvel, P.; Hoffmann, P.

    2012-01-01

    Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the electromagnetic susceptibility of a discrete low frequency transistor subject to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in common emitter configuration. The change in susceptibility to 100 MHz-1.5 GHz interferences lights up a synergy effect between near field electromagnetic waves and total ionizing dose. Physical mechanisms leading to changes in signal output are detailed. (authors)

  20. The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Schiz, F.J.W.

    1999-03-01

    This thesis investigates the behaviour of fluorine in two types of polysilicon emitter. In the first type the emitter is deposited at 610 deg. C as polycrystalline silicon (p-Si). In the second type the emitter is deposited at 560 deg. C as amorphous silicon (α-Si). The amorphous silicon 1 then regrows to polysilicon during subsequent high temperature anneals. Remarkably different behaviour of fluorine is seen in as-deposited α-Si and as-deposited p-Si emitter bipolar transistors. In the most extreme case, fluorine-implanted as-deposited p-Si devices show a base current increase by a factor of 1.5 and equivalent α-Si devices a base current decrease by a factor of 10.0 compared to unimplanted devices. Cross-section TEM observations are made to study the structure of the polysilicon/silicon interface and SIMS measurements to study the distribution of the fluorine in the polysilicon. The TEM results correlate well with the electrical results and show that fluorine accelerates interfacial oxide breakup. Furthermore, they show that for a given thermal budget, more interfacial oxide breakup and thus more epitaxial regrowth is obtained for transistors with p-Si polysilicon emitters. This results in a lower emitter resistance, for example as low as 12Ωμm 2 for as-deposited p-Si devices. The base current suppression for as-deposited α-Si devices is explained by fluorine passivation of trapping states at the interface. Analysis of the fluorine SIMS profiles suggests that they do not resemble normal diffusion profiles, but are due to fluorine trapped at defects. It is shown that a reciprocal relationship exists between the fluorine dose in the bulk polysilicon layer and the fluorine dose at the interface. In as-deposited α-Si devices, there is more fluorine trapped at defects in the bulk polysilicon layer, so less is available to diffuse to the interface. As a result there is less interfacial oxide breakup and more passivation in the as-deposited α-Si devices. These

  1. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-01-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

  2. Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

    Science.gov (United States)

    Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

    2014-09-10

    A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

  3. Silicon-on-Insulator Lateral-Insulated-Gate-Bipolar-Transistor with Built-in Self-anti-ESD Diode

    Directory of Open Access Journals (Sweden)

    Xiaojun Cheng

    2014-05-01

    Full Text Available Power SOI (Silicon-On-Insulator devices have an inherent sandwich structure of MOS (Metal-Oxide-Semiconductor gate which is very easy to suffer ESD (Electro-Static Discharge overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT (Lateral-Insulated-Gate-Bipolar-Transistor were carried out on the Silvaco TCAD (Technology-Computer-Aided-Design platform. According to the constrains of the technological process, the new introduction of the N+ doped region into P-well region that form the built-in self-anti-ESD diode should be done together with the doping of source under the same mask. The modifications were done by adjusting the vertical impurity profile in P-well into retrograde distribution and designing a cathode plate with a proper length to cover the forward depletion terminal and make sure that the thickness of the cathode plate is the same as that of the gate plate. The simulation results indicate that the modified device structure is compatible with the original one in process and design, the breakdown voltage margin of the former was expanded properly, and both the transient cathode voltages are clamped low enough very quickly. Therefore, the design and optimization results of the modified device structure of the built-in self-anti-ESD diode for the given SOI LIGBT meet the given requirements.

  4. DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications

    International Nuclear Information System (INIS)

    Dikmen, C.T.; Dogan, N.S.; Osman, M.A.

    1994-01-01

    There is currently a demand for active electronic devices operating reliably over wide range of temperatures. Potential applications for the high-temperature devices and integrated circuits are in the areas of jet engine and control instrumentation for nuclear power plants. Here, the large signal dc characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27--300 C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27--300 C)

  5. Unijunction transistors

    International Nuclear Information System (INIS)

    1981-01-01

    The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

  6. Superconducting transistor

    International Nuclear Information System (INIS)

    Gray, K.E.

    1978-01-01

    A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

  7. Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

    Science.gov (United States)

    Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

    2016-02-10

    Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

  8. Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

    Science.gov (United States)

    Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

    2005-06-01

    In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

  9. Radiation effect on silicon transistors in mixed neutrons-gamma environment

    Science.gov (United States)

    Assaf, J.; Shweikani, R.; Ghazi, N.

    2014-10-01

    The effects of gamma and neutron irradiations on two different types of transistors, Junction Field Effect Transistor (JFET) and Bipolar Junction Transistor (BJT), were investigated. Irradiation was performed using a Syrian research reactor (RR) (Miniature Neutron Source Reactor (MNSR)) and a gamma source (Co-60 cell). For RR irradiation, MCNP code was used to calculate the absorbed dose received by the transistors. The experimental results showed an overall decrease in the gain factors of the transistors after irradiation, and the JFETs were more resistant to the effects of radiation than BJTs. The effect of RR irradiation was also greater than that of gamma source for the same dose, which could be because neutrons could cause more damage than gamma irradiation.

  10. Characterization of a power bipolar transistor as high-dose dosimeter for 1.9-2.2 MeV electron beams

    Energy Technology Data Exchange (ETDEWEB)

    Fuochi, P.G., E-mail: fuochi@isof.cnr.i [ISOF-CNR Institute, Via P. Gobetti 101, I-40129, Bologna (Italy); Lavalle, M.; Corda, U. [ISOF-CNR Institute, Via P. Gobetti 101, I-40129, Bologna (Italy); Kuntz, F.; Plumeri, S. [Aerial, Parc d' Innovation Rue Laurent Fries F-67400 Illkirch (France); Gombia, E. [IMEM-CNR Institute, Viale delle Scienze 37 A, Loc. Fontanini, 43010 Parma (Italy)

    2010-04-15

    Results of the characterization studies on a power bipolar transistor investigated as a possible radiation dosimeter under laboratory condition using electron beams of energies from 2.2 to 8.6 MeV and gamma rays from a {sup 60}Co source and tested in industrial irradiation plants having high-activity {sup 60}Co gamma-source and high-energy, high-power electron beam have previously been reported. The present paper describes recent studies performed on this type of bipolar transistor irradiated with 1.9 and 2.2 MeV electron beams in the dose range 5-50 kGy. Dose response, post-irradiation heat treatment and stability, effects of temperature during irradiation in the range from -104 to +22 deg. C, dependence on temperature during reading in the range 20-50 deg. C, and the difference in response of the transistors irradiated from the plastic side and the copper side are reported. DLTS measurements performed on the irradiated devices to identify the recombination centres introduced by radiation and their dependence on dose and energy of the electron beam are also reported.

  11. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  12. Electro-Thermo-Mechanical Analysis of High-Power Press-Pack Insulated Gate Bipolar Transistors under Various Mechanical Clamping Conditions

    DEFF Research Database (Denmark)

    Hasmasan, Adrian Augustin; Busca, Cristian; Teodorescu, Remus

    2014-01-01

    With the continuously increasing demand for energy and the limited supply of fossil fuels, renewable power sources are becoming ever more important. Knowing that future energy demand will grow, manufacturers are increasing the size of new wind turbines (WTs) in order to reduce the cost of energy...... production. The reliability of the components has a large impact on the overall cost of a WT, and press-pack (PP) insulated gate bipolar transistors (IGBTs) could be a good solution for future multi-megawatt WTs because of advantages like high power density and reliability. When used in power converters, PP...

  13. Problems posed by the model of bipolar transistor used and the measurement of the parameters associated in the IMAG.1 program

    International Nuclear Information System (INIS)

    Imbrechts, Claude; Le Ber, Jacques

    1969-02-01

    The IMAG-1 program uses, for diodes and transistors, bipolar models of the Ebers and Moll modified type. This model is already used in the US NET.1 program. The object of this paper is essentially to pose the problem of the measurement of the parameters associated with the Ebers and Moll model. However, the authors' ambition is not to solve it but to attract attention to the need to speak the same language to define the model, the methods of measuring the associated parameters and their dispersions in order to better appreciate inaccuracies due to the model's approximations

  14. Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits.

    Science.gov (United States)

    Samelis, Apostolos

    A physical basis for large-signal HBT modeling was established in terms of transit times using a Monte Carlo analysis of AlGaAs/GaAs and GaInP/GaAs designs. Static carriers located in the collector-subcollector interface were found to prohibit accurate evaluation of transit times from electron velocity profiles. These carriers also influence the bias dependence of device capacitances. Analytical parameter extraction techniques for DC, thermal and high frequency HBT parameters were developed and applied to HBT large-signal modeling. The "impedance block" conditioned optimization technique was introduced to facilitate parameter extraction. Physical analysis of HBTs by means of Volterra Series techniques showed that C_{bc } dominates nonlinear distortion in high gain amplifiers. Designs with that C_{bc }-V_{cb} characteristics i.e. p -n collector HBTs lead to more than 10 dB IP3 improvement over n-collector HBTs. Nonlinear current cancellation was found to improve intermodulation distortion. A Gummel -Poon-based HBT large-signal model incorporating self-heating effects was developed and applied to AlGaAs/GaAs HBTs. Maximum power drive was shown to occur using constant V _{be} father than I_ {b} bias. The device temperature of constant I_{b} biased HBTs decreases at increased rf-drive levels ensuring in this case safer device operation. A large-signal model incorporating "soft" -breakdown effects typical of InP/InGaAs HBTs was developed and found to model succesfully the power characteristics of OEICs built with them. The effective large-signal transimpedance of a cascode transimpedance preamplifier was evaluated using this model and found to degrade by 3dBOmega for a variation of P_{in} from -65 to -5 dBm. Self-bias of individual transistors was studied and found to be related to variations of the amplifier characteristics at higher rf-drive levels. The power characteristics of CE and CB AlGaAs/GaAs HBTs were investigated using an on -wafer source/load pull setup

  15. Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Minsoo, E-mail: minsoo@mosfet.t.u-tokyo.ac.jp; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi

    2014-04-30

    We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al{sub 2}O{sub 3}-based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal–oxide–semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125 mV/dec and lower I{sub ON}/I{sub OFF} ratio of 10{sup 3}–10{sup 4} were obtained. It is expected that these device characteristics can be improved by further process optimization. - Highlights: • Layer by layer growth of Ge • Uniform interface between Ge and the insulator • Gate leakage current and drain current saturation seem to be well controlled. • The output characteristics show good saturation.

  16. Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

    International Nuclear Information System (INIS)

    Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi

    2014-01-01

    We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al 2 O 3 -based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal–oxide–semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125 mV/dec and lower I ON /I OFF ratio of 10 3 –10 4 were obtained. It is expected that these device characteristics can be improved by further process optimization. - Highlights: • Layer by layer growth of Ge • Uniform interface between Ge and the insulator • Gate leakage current and drain current saturation seem to be well controlled. • The output characteristics show good saturation

  17. Studies of annealing of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

    International Nuclear Information System (INIS)

    Tokuda, Y.; Usami, A.

    1978-01-01

    Annealing behavior of neutron-produced defects in silicon was studied by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET's). Three deep levels (N-1, N-2, and N-3 levels) in n-type silicon and two deep levels (P-1 and P-2 levels) in p-type silicon, introduced by irradiation, annealed gradually. Their energy levels and capture cross sections have been already reported by us. Three deep levels (P-3, P-4, and P-5 levels) were observed in annealed p-type silicon in the temperature range 150--300 0 C. For these defects, theta was measured as a function of frequency to obtain the time constant. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of P-3, P-4, and P-5 were estimated to be E/sub v/+0.21, E/sub v/+0.40, and E/sub v/+0.30 eV, respectively. The calculated hole capture cross sections of these levels were 2.2 x 10 -15 , 8.7 x 10 -14 , and 1.2 x 10 -14 cm 2 , respectively. Comparison with other published data was made. It was found that N-3 and P-2 levels corresponded to the divacancy. Furthermore, it seemed that P-3, P-4, and P-5 levels corresponded to the high-order vacancy defects

  18. Analysis of different tunneling mechanisms of InxGa1−xAs/AlGaAs tunnel junction light-emitting transistors

    International Nuclear Information System (INIS)

    Wu, Cheng-Han; Wu, Chao-Hsin

    2014-01-01

    The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

  19. Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

    Science.gov (United States)

    Lemaitre, Maxime G; Donoghue, Evan P; McCarthy, Mitchell A; Liu, Bo; Tongay, Sefaattin; Gila, Brent; Kumar, Purushottam; Singh, Rajiv K; Appleton, Bill R; Rinzler, Andrew G

    2012-10-23

    An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.

  20. Plasma Separation Process: Betacell (BCELL) code: User's manual. [Bipolar barrier junction

    Energy Technology Data Exchange (ETDEWEB)

    Taherzadeh, M.

    1987-11-13

    The emergence of clearly defined applications for (small or large) amounts of long-life and reliable power sources has given the design and production of betavoltaic systems a new life. Moreover, because of the availability of the plasma separation program, (PSP) at TRW, it is now possible to separate the most desirable radioisotopes for betacell power generating devices. A computer code, named BCELL, has been developed to model the betavoltaic concept by utilizing the available up-to-date source/cell parameters. In this program, attempts have been made to determine the betacell energy device maximum efficiency, degradation due to the emitting source radiation and source/cell lifetime power reduction processes. Additionally, comparison is made between the Schottky and PN junction devices for betacell battery design purposes. Certain computer code runs have been made to determine the JV distribution function and the upper limit of the betacell generated power for specified energy sources. A Ni beta emitting radioisotope was used for the energy source and certain semiconductors were used for the converter subsystem of the betacell system. Some results for a Promethium source are also given here for comparison. 16 refs.

  1. Investigation of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

    International Nuclear Information System (INIS)

    Tokuda, Y.; Usami, A.

    1976-01-01

    Defects introduced in silicon by neutron irradiation were investigated by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET). Measurements of theta as a function of frequency allowed the determination of the time constant for each defect. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.19 and E/sub v/+0.35 eV in p-type silicon and E/sub c/-0.16, E/sub c/-0.19, and E/sub c/-0.44 eV in n-type silicon were obtained. For these defects, calculations gave majority-carrier capture cross-section values of 2.8 x 10 -15 and 1.1 x 10 -14 cm 2 in p-type silicon, and 3.9 x 10 -14 , 1.6 x 10 -16 , and 2.3 x 10 -14 cm 2 in n-type silicon, respectively. Comparing with other published data, it was found that the energy level of E/sub c/-0.44 eV showed the value between the previously reported energy levels of E/sub c/-0.4 and E/sub c/-0.5 eV correlated with the doubly negative charge state and singly negative charge state of the divacancy, respectively. Thus, it is believed that a total of six energy levels are introduced in silicon by neutron irradiation. The energy levels of E/sub c/-0.16 and E/sub v/+0.35 eV were found to be correlated with the A center and the divacancy, respectively

  2. About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors

    Directory of Open Access Journals (Sweden)

    E Pankratov

    2016-10-01

    Full Text Available In this paper we introduce an approach to manufacture a heterobipolar transistors. Framework this approach we consider doping by diffusion or by ion implantation of required parts of a heterostructure with special configuration and optimization of annealing of dopant and/or radiation defects. In this case one have possibility to manufacture bipolar transistors, which include into itself p-n-junctions with higher sharpness and smaller dimensions. We also consider influence of presents of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in the considered transistors. An approach to decrease value of mismatch-induced stress has been considered.

  3. Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Enciso-Aguilar, M A; Aniel, F P; Zerounian, N

    2013-01-01

    We present a useful procedure to derive simplified expressions to model the minimum noise factor and the equivalent noise resistance of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors (HBTs). An acceptable agreement between models and measurements at operation frequencies up to 18 GHz and at several bias points is demonstrated. The development procedure includes all the significant microwave noise sources of the HBTs. These relations should be useful to model F min and R n for state-of-the-art IV-IV and III–V HBTs. The method is the first step to derive noise analyses formulas valid for operation frequencies near the unitary current gain frequency (f T ); however, to achieve this goal a necessary condition is to have access to HFN measurements up to this frequency regime. (paper)

  4. Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    Science.gov (United States)

    Kizilyalli, I. C.; Aktas, O.

    2015-12-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

  5. Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    International Nuclear Information System (INIS)

    Kizilyalli, I C; Aktas, O

    2015-01-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p–n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (10 4 to 10 6 cm −2 ) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 10 15 cm −3 . This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A  ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p–n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p–n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p–n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p–n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T −3/2 , consistent with a phonon scattering model. Also

  6. Oxide bipolar electronics: materials, devices and circuits

    International Nuclear Information System (INIS)

    Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; Von Wenckstern, Holger

    2016-01-01

    We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization. (topical review)

  7. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  8. Evolution of the MOS transistor - From conception to VLSI

    International Nuclear Information System (INIS)

    Sah, C.T.

    1988-01-01

    Historical developments of the metal-oxide-semiconductor field-effect-transistor (MOSFET) during the last sixty years are reviewed, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon MOSFET thirty years later in 1960. A survey is then made of the milestones of the past thirty years leading to the latest submicron silicon logic CMOS (Complementary MOS) and BICMOS (Bipolar-Junction-Transistor CMOS combined) arrays and the three-dimensional and ferroelectric extensions of Dennard's one-transistor dynamic random access memory (DRAM) cell. Status of the submicron lithographic technologies (deep ultra-violet light, X-ray, electron-beam) are summarized. Future trends of memory cell density and logic gate speed are projected. Comparisons of the switching speed of the silicon MOSFET with that of silicon bipolar and GaAs field-effect transistors are reviewed. Use of high-temperature superconducting wires and GaAs-on-Si monolithic semiconductor optical clocks to break the interconnect-wiring delay barrier is discussed. Further needs in basic research and mathematical modeling on the failure mechanisms in submicron silicon transistors at high electric fields (hot electron effects) and in interconnection conductors at high current densities and low as well as high electric fields (electromigration) are indicated

  9. On the Bipolar DC Flow Field-Effect-Transistor for Multifunctional Sample Handing in Microfluidics: A Theoretical Analysis under the Debye–Huckel Limit

    Directory of Open Access Journals (Sweden)

    Weiyu Liu

    2018-02-01

    Full Text Available We present herein a novel method of bipolar field-effect control on DC electroosmosis (DCEO from a physical point of view, in the context of an intelligent and robust operation tool for stratified laminar streams in microscale systems. In this unique design of the DC flow field-effect-transistor (DC-FFET, a pair of face-to-face external gate terminals are imposed with opposite gate-voltage polarities. Diffuse-charge dynamics induces heteropolar Debye screening charge within the diffuse double layer adjacent to the face-to-face oppositely-polarized gates, respectively. A background electric field is applied across the source-drain terminal and forces the face-to-face counterionic charge of reversed polarities into induced-charge electroosmotic (ICEO vortex flow in the lateral direction. The chaotic turbulence of the transverse ICEO whirlpool interacts actively with the conventional plug flow of DCEO, giving rise to twisted streamlines for simultaneous DCEO pumping and ICEO mixing of fluid samples along the channel length direction. A mathematical model in thin-layer approximation and the low-voltage limit is subsequently established to test the feasibility of the bipolar DC-FFET configuration in electrokinetic manipulation of fluids at the micrometer dimension. According to our simulation analysis, an integrated device design with two sets of side-by-side, but upside-down gate electrode pair exhibits outstanding performance in electroconvective pumping and mixing even without any externally-applied pressure difference. Moreover, a paradigm of a microdevice for fully electrokinetics-driven analyte treatment is established with an array of reversed bipolar gate-terminal pairs arranged on top of the dielectric membrane along the channel length direction, from which we can obtain almost a perfect liquid mixture by using a smaller magnitude of gate voltages for causing less detrimental effects at a small Dukhin number. Sustained by theoretical

  10. Performance Enhancement of Power Transistors and Radiation effect

    International Nuclear Information System (INIS)

    Hassn, Th.A.A.

    2012-01-01

    The main objective of this scientific research is studying the characteristic of bipolar junction transistor device and its performance under radiation fields and temperature effect as a control element in many power circuits. In this work we present the results of experimental measurements and analytical simulation of gamma – radiation effects on the electrical characteristics and operation of power transistor types 2N3773, 2N3055(as complementary silicon power transistor are designed for general-purpose switching and amplifier applications), three samples of each type were irradiated by gamma radiation with doses, 1 K rad, 5 K rad, 10 K rad, 30 K rad, and 10 Mrad, the experimental data are utilized to establish an analytical relation between the total absorbed dose of gamma irradiation and corresponding to effective density of generated charge in the internal structure of transistor, the electrical parameters which can be measured to estimate the generated defects in the power transistor are current gain, collector current and collected emitter leakage current , these changes cause the circuit to case proper functioning. Collector current and transconductance of each device are calibrated as a function of irradiated dose. Also the threshold voltage and transistor gain can be affected and also calibrated as a function of dose. A silicon NPN power transistor type 2N3773 intended for general purpose applications, were used in this work. It was designed for medium current and high power circuits. Performance and characteristic were discusses under temperature and gamma radiation doses. Also the internal junction thermal system of the transistor represented in terms of a junction thermal resistance (Rjth). The thermal resistance changed by ΔRjth, due to the external intended, also due to the gamma doses intended. The final result from the model analysis reveals that the emitter-bias configuration is quite stable by resistance ratio RB/RE. Also the current

  11. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  12. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  13. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  14. The Fault Detection, Localization, and Tolerant Operation of Modular Multilevel Converters with an Insulated Gate Bipolar Transistor (IGBT Open Circuit Fault

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-04-01

    Full Text Available Reliability is one of the critical issues for a modular multilevel converter (MMC since it consists of a large number of series-connected power electronics submodules (SMs. In this paper, a complete control strategy including fault detection, localization, and tolerant operation is proposed for the MMC under an insulated gate bipolar transistor (IGBT open circuit fault. According to the output characteristics of the SM with the open-circuit fault of IGBT, a fault detection method based on the circulating current and output current observation is used. In order to further precisely locate the position of the faulty SM, a fault localization method based on the SM capacitor voltage observation is developed. After the faulty SM is isolated, the continuous operation of the converter is ensured by adopting the fault-tolerant strategy based on the use of redundant modules. To verify the proposed fault detection, fault localization, and fault-tolerant operation strategies, a 900 kVA MMC system under the conditions of an IGBT open circuit is developed in the Matlab/Simulink platform. The capabilities of rapid detection, precise positioning, and fault-tolerant operation of the investigated detection and control algorithms are also demonstrated.

  15. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    International Nuclear Information System (INIS)

    Li Ou-Peng; Zhang Yong; Xu Rui-Min; Cheng Wei; Wang Yuan; Niu Bing; Lu Hai-Yan

    2016-01-01

    Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are −2.688 dBm at 210 GHz and −2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. (paper)

  16. A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

    Science.gov (United States)

    Shui, Qiong

    This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to

  17. Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

    Science.gov (United States)

    Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2017-06-01

    We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap EG,eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced EG,eff. Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85Bi0.15/GaAs0.92N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher ION compared to InAs and In0.53Ga0.47As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET.

  18. Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

    Science.gov (United States)

    Reed, Robert A.; Marshall, Paul W.; Pickel, Jim; Carts, Martin A.; Irwin, TIm; Niu, Guofu; Cressler, John; Krithivasan, Ramkumar; Fritz, Karl; Riggs, Pam

    2003-01-01

    SiGe based technology is widely recognized for its tremendous potential to impact the high speed microelectronic industry, and therefore the space industry, by monolithic incorporation of low power complementary logic with extremely high speed SiGe Heterojunction Bipolar Transistor (HBT) logic. A variety of studies have examined the ionizing dose, displacement damage and single event characteristics, and are reported. Accessibility to SiGe through an increasing number of manufacturers adds to the importance of understanding its intrinsic radiation characteristics, and in particular the single event effect (SEE) characteristics of the high bandwidth HBT based circuits. IBM is now manufacturing in its 3rd generation of their commercial SiGe processes, and access is currently available to the first two generations (known as and 6HP) through the MOSIS shared mask services with anticipated future release of the latest (7HP) process. The 5 HP process is described and is characterized by a emitter spacing of 0.5 micron and a cutoff frequency ff of 50 GHz, whereas the fully scaled 7HP HBT employs a 0.18 micron emitter and has an fT of 120 GHz. Previous investigations have the examined SEE response of 5 HP HBT circuits through both circuit testing and modeling. Charge collection modeling studies in the 5 H P process have also been conducted, but to date no measurements have been reported of charge collection in any SiGe HBT structures. Nor have circuit models for charge collection been developed in any version other than the 5 HP HBT structure. Our investigation reports the first indications of both charge collection and circuit response in IBM s 7HP-based SiGe process. We compare broad beam heavy ion SEU test results in a fully function Pseudo-Random Number (PRN) sequence generator up to frequencies of 12 Gbps versus effective LET, and also report proton test results in the same circuit. In addition, we examine the charge collection characteristics of individual 7HP HBT

  19. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    Directory of Open Access Journals (Sweden)

    Sofiane Khachroumi

    2010-01-01

    Full Text Available Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon, permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

  20. A pattern recognition approach to transistor array parameter variance

    Science.gov (United States)

    da F. Costa, Luciano; Silva, Filipi N.; Comin, Cesar H.

    2018-06-01

    The properties of semiconductor devices, including bipolar junction transistors (BJTs), are known to vary substantially in terms of their parameters. In this work, an experimental approach, including pattern recognition concepts and methods such as principal component analysis (PCA) and linear discriminant analysis (LDA), was used to experimentally investigate the variation among BJTs belonging to integrated circuits known as transistor arrays. It was shown that a good deal of the devices variance can be captured using only two PCA axes. It was also verified that, though substantially small variation of parameters is observed for BJT from the same array, larger variation arises between BJTs from distinct arrays, suggesting the consideration of device characteristics in more critical analog designs. As a consequence of its supervised nature, LDA was able to provide a substantial separation of the BJT into clusters, corresponding to each transistor array. In addition, the LDA mapping into two dimensions revealed a clear relationship between the considered measurements. Interestingly, a specific mapping suggested by the PCA, involving the total harmonic distortion variation expressed in terms of the average voltage gain, yielded an even better separation between the transistor array clusters. All in all, this work yielded interesting results from both semiconductor engineering and pattern recognition perspectives.

  1. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    Science.gov (United States)

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

  2. Investigation of Impact of the Gate Circuitry on IGBT Transistor Dynamic Parameters

    Directory of Open Access Journals (Sweden)

    Vytautas Bleizgys

    2011-03-01

    Full Text Available The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.Article in Lithuanian

  3. Enhanced low dose rate radiation effect test on typical bipolar devices

    International Nuclear Information System (INIS)

    Liu Minbo; Chen Wei; Yao Zhibin; He Baoping; Huang Shaoyan; Sheng Jiangkun; Xiao Zhigang; Wang Zujun

    2014-01-01

    Two types of bipolar transistors and nine types bipolar integrated circuit were selected in the irradiation experiment at different "6"0Co γ dose rate. The base current of bipolar transistor and input bias current of amplifier and comparator was measured, low dose enhance factor of test device was obtained. The results show that bipolar device have enhanced low dose rate sensitivity, enhancement factor of bipolar integrated circuit was bigger than that of transistor, and enhanced low dose rate sensitivity greatly varied with different structure and process of bipolar device. (authors)

  4. Distributed amplifier using Josephson vortex flow transistors

    International Nuclear Information System (INIS)

    McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

    1986-01-01

    A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

  5. Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

    DEFF Research Database (Denmark)

    Choi, Uimin; Blaabjerg, Frede; Jørgensen, Søren

    2017-01-01

    levels are presented. This study enables to include the tΔTj effect on lifetime model of IGBT modules for its lifetime estimation and it may result in improved lifetime prediction of IGBT modules under given mission profiles of converters. A postfailure analysis of the tested IGBT modules is also......In this paper, the effect of junction temperature swing duration on lifetime of transfer molded power insulated gate bipolar transistor (IGBT) modules is studied and a relevant lifetime factor is modeled. This study is based on 39 accelerated power cycling test results under six different...

  6. A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

    International Nuclear Information System (INIS)

    Green, James E; David, John P R; Tozer, Richard C

    2012-01-01

    This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately. (paper)

  7. Programmable automated transistor test system

    International Nuclear Information System (INIS)

    Truong, L.V.; Sundberg, G.R.

    1986-01-01

    The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

  8. Image charge effects in single-molecule junctions: Breaking of symmetries and negative-differential resistance in a benzene single-electron transistor

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Flensberg, K.

    2011-01-01

    and molecular symmetries remain unclear. Using a theoretical framework developed for semiconductor-nanostructure-based single-electron transistors (SETs), we demonstrate that the image charge interaction breaks the molecular symmetries in a benzene-based single-molecule transistor operating in the Coulomb...... blockade regime. This results in the appearance of a so-called blocking state, which gives rise to negative-differential resistance (NDR). We show that the appearance of NDR and its magnitude in the symmetry-broken benzene SET depends in a complicated way on the interplay between the many-body matrix...

  9. Atypical transistor-based chaotic oscillators: Design, realization, and diversity

    Science.gov (United States)

    Minati, Ludovico; Frasca, Mattia; OświÈ©cimka, Paweł; Faes, Luca; DroŻdŻ, Stanisław

    2017-07-01

    In this paper, we show that novel autonomous chaotic oscillators based on one or two bipolar junction transistors and a limited number of passive components can be obtained via random search with suitable heuristics. Chaos is a pervasive occurrence in these circuits, particularly after manual adjustment of a variable resistor placed in series with the supply voltage source. Following this approach, 49 unique circuits generating chaotic signals when physically realized were designed, representing the largest collection of circuits of this kind to date. These circuits are atypical as they do not trivially map onto known topologies or variations thereof. They feature diverse spectra and predominantly anti-persistent monofractal dynamics. Notably, we recurrently found a circuit comprising one resistor, one transistor, two inductors, and one capacitor, which generates a range of attractors depending on the parameter values. We also found a circuit yielding an irregular quantized spike-train resembling some aspects of neural discharge and another one generating a double-scroll attractor, which represent the smallest known transistor-based embodiments of these behaviors. Through three representative examples, we additionally show that diffusive coupling of heterogeneous oscillators of this kind may give rise to complex entrainment, such as lag synchronization with directed information transfer and generalized synchronization. The replicability and reproducibility of the experimental findings are good.

  10. Simulation of a spintronic transistor: A study of its performance

    International Nuclear Information System (INIS)

    Pela, R.R.; Teles, L.K.

    2009-01-01

    We study theoretically the magnetic bipolar transistor, and compare its performance with common bipolar transistor. We present not only the simulation results for the characteristic curves, but also other relevant parameters related with its performance, such as: the current amplification factor, the open-loop gain, the hybrid parameters and the cutoff frequency. We noted that the spin-charge coupling introduces new phenomena that enrich the functionality characteristics of the magnetic bipolar transistor. Among other things, it has an adjustable band structure, which may be modified during the device operation; it exhibits the already known spin-voltaic effect. On the other hand, we observed that it is necessary a large g-factor to analyze the influence of the field B over the transistor. Nevertheless, we consider the magnetic bipolar transistor as a promising device for spintronic applications

  11. Low-background transistors for application in nuclear electronics

    International Nuclear Information System (INIS)

    Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.

    1988-01-01

    Investigations of silicon transistors were carried out to determine transistors with low value of base distributed resistance (R). Measurement results for R and current amplification coefficient β are presented for bipolar transistor several types. Correlations between R and β were studied. KT 399A, 2T640A and KT3117B transistors are found to be most adequate ones as a base for low-background amplifier development

  12. Organic field-effect transistors as a test-bed for molecular electronics : A combined study with large-area molecular junctions

    NARCIS (Netherlands)

    Asadi, Kamal; Katsouras, Ilias; Harkema, Jan; Gholamrezaie, Fatemeh; Smits, Edsger C. F.; Biscarini, Fabio; Blom, Paul W. M.; de Leeuw, Dago M.

    The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the

  13. Organic field-effect transistors as a test-bed for molecular electronics : a combined study with large-area molecular junctions

    NARCIS (Netherlands)

    Asadi, K.; Katsouras, I.; Harkema, J.; Gholamrezaie, F.; Smits, E.C.P.; Biscarini, F.; Blom b, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the

  14. Organic field-effect transistors as a test-bed for molecular electronics : A combined study with large-area molecular junctions

    NARCIS (Netherlands)

    Asadi, Kamal; Katsouras, Ilias; Harkema, Jan; Gholamrezaie, Fatemeh; Smits, Edsger C. F.; Biscarini, Fabio; Blom, Paul W. M.; de Leeuw, Dago M.

    2012-01-01

    The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the

  15. Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

    International Nuclear Information System (INIS)

    Dinesh, C.M.; Ramani; Radhakrishna, M.C.; Dutt, R.N.; Khan, S.A.; Kanjilal, D.

    2008-01-01

    Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 x 10 11 -1.8 x 10 12 ions cm -2 on NPN power transistor. The range (R), electronic energy loss (S e ), nuclear energy loss (S n ), total ionizing dose (TID) and total displacement damage (D d ) in the silicon target are calculated from TRIM Monte Carlo Code. Output resistance is 3.568 x 10 4 Ω for unirradiated device and it increases to 6 x 10 7 Ω as the fluence is increased from 1 x 10 11 to 1.8 x 10 12 ions cm -2 . The capacitance of the emitter-base junction of the transistor decreases and dielectric loss of the emitter-base junction increases with increase in ion fluence. The built in voltage of the unirradiated sample is 0.5 V and it shifts to 0.4 V after irradiation at fluence of 1.8 x 10 12 ions cm -2 and the corresponding doping density reduced to 5.758 x 10 16 cm -3 . The charge carrier removal rate varies linearly with the increase in ion fluence

  16. Effect of 1MeV electron beam on transistors and circuits

    International Nuclear Information System (INIS)

    Lee, Tae Hoon

    1998-02-01

    It has been known that semiconductor devices operating in a radiation environment exhibited significant alterations of their electrical responses. Since an electron beam bombardment produces lattice damage in Si and charged defects in SiO 2 , several electrical parameters of transistors exhibit significant changes. Those parameters are the current gain of BJT (Bipolar Junction Transistor) and the threshold voltage of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The degradation of transistors brings about that of circuits. This paper presents the results of experiments and simulations performed to study the effects of 1MeV electron beam irradiation on selected silicon transistors and circuits. For BJTs, the current gains of npn (2N3904) and pnp (2N3906) linearly decreased as the irradiation dose increased, and from this result, the damage constants, Ks were obtained as 13.65 for 2N3904 and 22.52 for 2N3906 in MGy, indicating a more stable operation in the electron radiation environment for pnp than that for npn. The decrease of current gain was due to that of minority-carrier lifetime in the base region. For MOSFETs (CD4007s), the threshold voltages of NMOS and PMOS shifted to the lower values, which was resulted from the accumulation of charge in SiO 2 . The charges could be categorized into fixed oxide charge and interfacial trap charge. From experimental results, the amounts of the induced charges could be quantitatively estimated. These degradations of transistors brought about the decrease in the voltage gain of CE (Common Emitter) amplifier and the shifts in the inverting voltage of inverter. Additionally, PSpice simulations of these circuits were carried out by modeling of irradiated transistors. The comparison of simulation with experiment showed the relatively good agreement of simulation for the degradation of circuits after irradiation

  17. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

    2017-02-15

    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  18. Transistor data book

    International Nuclear Information System (INIS)

    1988-03-01

    It introduces how to use this book. It lists transistor data and index, which are Type No, Cross index, Germanium PNP low power transistors, silicon NPN low power transistors, Germanium PNP high power transistors, Switching transistors, transistor arrays, Miscellaneous transistors, types with U.S military specifications, direct replacement transistors, suggested replacement transistors, schematic drawings, outline drawings, device number keys and manufacturer's logos.

  19. Chirality effect in disordered graphene ribbon junctions

    International Nuclear Information System (INIS)

    Long Wen

    2012-01-01

    We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

  20. Bipolar Disorder

    Science.gov (United States)

    Bipolar disorder is a serious mental illness. People who have it go through unusual mood changes. They go ... The down feeling is depression. The causes of bipolar disorder aren't always clear. It runs in families. ...

  1. The Smallest Transistor-Based Nonautonomous Chaotic Circuit

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamasevicius, Arunas

    2005-01-01

    A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

  2. Method for double-sided processing of thin film transistors

    Science.gov (United States)

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2008-04-08

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  3. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great

  4. On the 50th Anniversary of the Transistor

    DEFF Research Database (Denmark)

    Stassen, Flemming

    1997-01-01

    This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

  5. Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

    Science.gov (United States)

    Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

    2016-04-01

    In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

  6. Application of the Johnson criteria to graphene transistors

    International Nuclear Information System (INIS)

    Kelly, M J

    2013-01-01

    For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications. (fast track communication)

  7. Monolayer field effect transistor as a probe of electronic defects in organic semiconducting layers at organic/inorganic hetero-junction interface

    International Nuclear Information System (INIS)

    Park, Byoungnam

    2016-01-01

    The origin of a large negative threshold voltage observed in monolayer (ML) field effect transistors (FETs) is explored using in-situ electrical measurements through confining the thickness of an active layer to the accumulation layer thickness. Using ML pentacene FETs combined with gated multiple-terminal devices and atomic force microscopy, the effect of electronic and structural evolution of a ML pentacene film on the threshold voltage in an FET, proportional to the density of deep traps, was probed, revealing that a large negative threshold voltage found in ML FETs results from the pentacene/SiO_2 and pentacene/metal interfaces. More importantly, the origin of the threshold voltage difference between ML and thick FETs is addressed through a model in which the effective charge transport layer is transitioned from the pentacene layer interfacing with the SiO_2 gate dielectric to the upper layers with pentacene thickness increasing evidenced by pentacene coverage dependent threshold voltage measurements. - Highlights: • The origin of a large negative threshold voltage in accumulation layer is revealed. • Electronic localized states at the nanometer scale are separately probed from the bulk. • The second monolayer becomes the effective charge transport layer governing threshold voltage.

  8. Monolayer field effect transistor as a probe of electronic defects in organic semiconducting layers at organic/inorganic hetero-junction interface

    Energy Technology Data Exchange (ETDEWEB)

    Park, Byoungnam, E-mail: metalpbn@hongik.ac.kr

    2016-01-01

    The origin of a large negative threshold voltage observed in monolayer (ML) field effect transistors (FETs) is explored using in-situ electrical measurements through confining the thickness of an active layer to the accumulation layer thickness. Using ML pentacene FETs combined with gated multiple-terminal devices and atomic force microscopy, the effect of electronic and structural evolution of a ML pentacene film on the threshold voltage in an FET, proportional to the density of deep traps, was probed, revealing that a large negative threshold voltage found in ML FETs results from the pentacene/SiO{sub 2} and pentacene/metal interfaces. More importantly, the origin of the threshold voltage difference between ML and thick FETs is addressed through a model in which the effective charge transport layer is transitioned from the pentacene layer interfacing with the SiO{sub 2} gate dielectric to the upper layers with pentacene thickness increasing evidenced by pentacene coverage dependent threshold voltage measurements. - Highlights: • The origin of a large negative threshold voltage in accumulation layer is revealed. • Electronic localized states at the nanometer scale are separately probed from the bulk. • The second monolayer becomes the effective charge transport layer governing threshold voltage.

  9. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  10. Transport properties and device-design of Z-shaped MoS2 nanoribbon planar junctions

    Science.gov (United States)

    Zhang, Hua; Zhou, Wenzhe; Liu, Qi; Yang, Zhixiong; Pan, Jiangling; Ouyang, Fangping; Xu, Hui

    2017-09-01

    Based on MoS2 nanoribbons, metal-semiconductor-metal planar junction devices were constructed. The electronic and transport properties of the devices were studied by using density function theory (DFT) and nonequilibrium Green's functions (NEGF). It is found that a band gap about 0.4 eV occurs in the planar junction. The electron and hole transmissions of the devices are mainly contributed by the Mo atomic orbitals. The electron transport channel is located at the edge of armchair MoS2 nanoribbon, while the hole transport channel is delocalized in the channel region. The I-V curve of the two-probe device shows typical transport behavior of Schottky barrier, and the threshold voltage is of about 0.2 V. The field effect transistors (FET) based on the planar junction turn out to be good bipolar transistors, the maximum current on/off ratio can reach up to 1 × 104, and the subthreshold swing is 243 mV/dec. It is found that the off-state current is dependent on the length and width of the channel, while the on-state current is almost unaffected. The switching performance of the FET is improved with increasing the length of the channel, and shows oscillation behavior with the change of the channel width.

  11. Direct coupled amplifiers using field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Fowler, E P [Control and Instrumentation Division, Atomic Energy Establishment, Winfrith, Dorchester, Dorset (United Kingdom)

    1964-03-15

    The concept of the uni-polar field effect transistor (P.E.T.) was known before the invention of the bi-polar transistor but it is only recently that they have been made commercially. Being produced as yet only in small quantities, their price imposes a restriction on use to circuits where their peculiar properties can be exploited to the full. One such application is described here where the combination of low voltage drift and relatively low input leakage current are necessarily used together. One of the instruments used to control nuclear reactors has a logarithmic response to the mean output current from a polarised ionisation chamber. The logarithmic signal is then differentiated electrically, the result being displayed on a meter calibrated to show the reactor divergence or doubling time. If displayed in doubling time the scale is calibrated reciprocally. Because of the wide range obtained in the logarithmic section and the limited supply voltage, an output of 1 volt per decade change in ionisation current is used. Differentiating this gives a current of 1.5 x 10{sup -8} A for p.s.D. (20 sec. doubling time) in the differentiating amplifier. To overcome some of the problems of noise due to statistical variations in input current, the circuit design necessitates a resistive path to ground at the amplifier input of 20 M.ohms. A schematic diagram is shown. 1. It is evident that a zero drift of 1% can be caused by a leakage current of 1.5 x 10{sup -10} A or an offset voltage of 3 mV at the amplifier input. Although the presently used electrometer valve is satisfactory from the point of view of grid current, there have been sudden changes in grid to grid voltage (the valve is a double triode) of up to 10 m.V. It has been found that a pair of F.E.T's. can be used to replace the electrometer valve so long as care is taken in correct balance of the two devices. An investigation has been made into the characteristics of some fourteen devices to see whether those with

  12. Bipolar disorders

    DEFF Research Database (Denmark)

    Vieta, Eduard; Berk, Michael; Schulze, Thomas G

    2018-01-01

    Bipolar disorders are chronic and recurrent disorders that affect >1% of the global population. Bipolar disorders are leading causes of disability in young people as they can lead to cognitive and functional impairment and increased mortality, particularly from suicide and cardiovascular disease...... and accurate diagnosis is difficult in clinical practice as the onset of bipolar disorder is commonly characterized by nonspecific symptoms, mood lability or a depressive episode, which can be similar in presentation to unipolar depression. Moreover, patients and their families do not always understand...... a bipolar disorder from other conditions. Optimal early treatment of patients with evidence-based medication (typically mood stabilizers and antipsychotics) and psychosocial strategies is necessary....

  13. Bipolar Disorder.

    Science.gov (United States)

    Spearing, Melissa

    Bipolar disorder, a brain disorder that causes unusual shifts in a person's mood, affects approximately one percent of the population. It commonly occurs in late adolescence and is often unrecognized. The diagnosis of bipolar disorder is made on the basis of symptoms, course of illness, and when possible, family history. Thoughts of suicide are…

  14. Electrical pulse burnout of transistors in intense ionizing radiation

    International Nuclear Information System (INIS)

    Hartman, E.F.; Evans, D.C.

    1975-01-01

    Tests examining possible synergistic effects of electrical pulses and ionizing radiation on transistors were performed and energy/power thresholds for transistor burnout determined. The effect of ionizing radiation on burnout thresholds was found to be minimal, indicating that electrical pulse testing in the absence of radiation produces burnout-threshold results which are applicable to IEMP studies. The conditions of ionized transistor junctions and radiation induced current surges at semiconductor device terminals are inherent in IEMP studies of electrical circuits

  15. Determination of parameters of the Gummel-Pun model of bipolar transistors with account of Kirk effect and ionizing radiation effects; Opredelenie parametrov modeli Gummelya-Puna bipolyarnykh tranzistiorov s uchetom ehffekta Kirka i vozdejstviya ioniziruyushchego izlucheniya

    Energy Technology Data Exchange (ETDEWEB)

    Ragozin, A Yu [and others

    1994-12-31

    Gamma radiation effect on the parameters Gummel-Pun model n-p-n transistors with different resistance of the collector layer is investigated. A method for their determination on the base of vol-ampere characteristics is proposed.

  16. Transistor Effect in Improperly Connected Transistors.

    Science.gov (United States)

    Luzader, Stephen; Sanchez-Velasco, Eduardo

    1996-01-01

    Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

  17. Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime

    International Nuclear Information System (INIS)

    Ghosh, Bahniman; Mondal, Partha; Akram, M. W.; Bal, Punyasloka; Salimath, Akshay Kumar

    2014-01-01

    We propose a hetero-gate-dielectric double gate junctionless transistor (HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling (BTBT) in the sub-threshold region. A junctionless transistor (JLT) is turned off by the depletion of carriers in the highly doped thin channel (device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel. These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n–p–n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. (semiconductor devices)

  18. Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

    Science.gov (United States)

    Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

    2017-01-11

    Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

  19. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    Energy Technology Data Exchange (ETDEWEB)

    Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp [National Institute of Technology, Kagawa College, Kagawa, Mitoyo, Takuma, Koda 551 (Japan); Tsuji, Takuto [National Institute of Technology, Suzuka College, Mie, Suzuka, Shiroko (Japan); Wakahara, Akihiro [Toyohashi University of Technology, Aichi, Toyohashi, Tenpaku, Hibarigaoka 1-1 (Japan); Rusop, Mohamad [University Technology Mara, Selangor, Shah Alam, 40450 (Malaysia)

    2016-07-06

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  20. Degradation Mechanisms for GaN and GaAs High Speed Transistors

    Directory of Open Access Journals (Sweden)

    Fan Ren

    2012-11-01

    Full Text Available We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs as well as Heterojunction Bipolar Transistors (HBTs in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate, and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

  1. Degradation Mechanisms for GaN and GaAs High Speed Transistors

    Science.gov (United States)

    Cheney, David J.; Douglas, Erica A.; Liu, Lu; Lo, Chien-Fong; Gila, Brent P.; Ren, Fan; Pearton, Stephen J.

    2012-01-01

    We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

  2. Transistor regenerative spectrometer for 14N nuclear quadrupole resonance study

    International Nuclear Information System (INIS)

    Anferov, V.P.; Mikhal'kov, V.M.

    1981-01-01

    Improvement of the Robinson transducer for investigations of nuclear quadrupole resonance (NQR) in 14 N is described. Amplifier of the suggested transducer is made using p-n field effect transistor and small-noise SHF bipolar transistor. Such a circuit permits to obtain optimal relation between input resistance, low-frequency noises and transconductance which provides uniform gain of the transducer in the frequency range of 0.6-12 MHz and permits to construct a transistor spectrometer of NQR not yielding to a lamp spectrometer in sensitivity [ru

  3. Bipolar Disorder

    Science.gov (United States)

    ... one or other traumatic event Drug or alcohol abuse Complications Left untreated, bipolar disorder can result in serious problems that affect every area of your life, such as: Problems related to drug and alcohol use Suicide or suicide attempts Legal or financial problems Damaged ...

  4. Nonlinear System Analysis in Bipolar Integrated Circuits.

    Science.gov (United States)

    1980-01-01

    H2 (fl,f 6), H2 (f2,f4), and H2 (f3,f4) are all equal, Equation (7-8) can be written as v M(t) = mA2 H2 (fl’-f 2) cos[27(f ,-f2)t] (7-9) The AF...and R. A. AMADORI: Micro- wave Interference Effect in Bipolar Transistors, IEEE Trans. EMC, Vol. EMC-17, pp. 216-219, November 1975. 55. KAPLAN , G

  5. Neutrality in bipolar structures

    DEFF Research Database (Denmark)

    Montero, Javier; Rodríguez, J. Tinguaro; Franco, Camilo

    2014-01-01

    In this paper, we want to stress that bipolar knowledge representation naturally allows a family of middle states which define as a consequence different kinds of bipolar structures. These bipolar structures are deeply related to the three types of bipolarity introduced by Dubois and Prade, but our...... approach offers a systematic explanation of how such bipolar structures appear and can be identified....

  6. Principles of an atomtronic transistor

    International Nuclear Information System (INIS)

    Caliga, Seth C; Anderson, Dana Z; Straatsma, Cameron J E; Zozulya, Alex A

    2016-01-01

    A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source–gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device. (paper)

  7. Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

    Science.gov (United States)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2012-01-01

    Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

  8. Transistor Small Signal Analysis under Radiation Effects

    International Nuclear Information System (INIS)

    Sharshar, K.A.A.

    2004-01-01

    A Small signal transistor parameters dedicate the operation of bipolar transistor before and after exposed to gamma radiation (1 Mrad up to 5 Mrads) and electron beam(1 MeV, 25 mA) with the same doses as a radiation sources, the electrical parameters of the device are changed. The circuit Model has been discussed.Parameters, such as internal emitter resistance (re), internal base resistance, internal collector resistance (re), emitter base photocurrent (Ippe) and base collector photocurrent (Ippe). These parameters affect on the operation of the device in its applications, which work as an effective element, such as current gain (hFE≡β)degradation it's and effective parameter in the device operation. Also the leakage currents (IcBO) and (IEBO) are most important parameters, Which increased with radiation doses. Theoretical representation of the change in the equivalent circuit for NPN and PNP bipolar transistor were discussed, the input and output parameters of the two types were discussed due to the change in small signal input resistance of the two types. The emitter resistance(re) were changed by the effect of gamma and electron beam irradiation, which makes a change in the role of matching impedances between transistor stages. Also the transistor stability factors S(Ico), S(VBE) and S(β are detected to indicate the transistor operations after exposed to radiation fields. In low doses the gain stability is modified due to recombination of induced charge generated during device fabrication. Also the load resistance values are connected to compensate the effect

  9. Bipolar Treatment: Are Bipolar I and Bipolar II Treated Differently?

    Science.gov (United States)

    ... The diagnosis and management of bipolar I and bipolar II disorders: Clinical practice update. Mayo Clinic Proceedings. 2017;92:1532. Haynes PL, et al. Social rhythm therapies for mood disorders: An update. Current Psychiatry Reports. ...

  10. High current transistor pulse generator

    International Nuclear Information System (INIS)

    Nesterov, V.; Cassel, R.

    1991-05-01

    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

  11. Bipolar electrochemistry.

    Science.gov (United States)

    Fosdick, Stephen E; Knust, Kyle N; Scida, Karen; Crooks, Richard M

    2013-09-27

    A bipolar electrode (BPE) is an electrically conductive material that promotes electrochemical reactions at its extremities (poles) even in the absence of a direct ohmic contact. More specifically, when sufficient voltage is applied to an electrolyte solution in which a BPE is immersed, the potential difference between the BPE and the solution drives oxidation and reduction reactions. Because no direct electrical connection is required to activate redox reactions, large arrays of electrodes can be controlled with just a single DC power supply or even a battery. The wireless aspect of BPEs also makes it possible to electrosynthesize and screen novel materials for a wide variety of applications. Finally, bipolar electrochemistry enables mobile electrodes, dubbed microswimmers, that are able to move freely in solution. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Transtorno bipolar

    Directory of Open Access Journals (Sweden)

    Alda Martin

    1999-01-01

    Full Text Available Os resultados de estudos de famílias sugerem que o transtorno bipolar tenha uma base genética. Essa hipótese foi reforçada em estudos de adoção e de gêmeos. A herança do transtorno bipolar é complexa, envolve vários genes, além de apresentar heterogeneidade e interação entre fatores genéticos e não-genéticos. Achados, que já foram replicados, já implicaram os cromossomos 4, 12, 18 e 21, entre outros, na busca por genes de suscetibilidade. Os resultados mais promissores foram obtidos através de estudos de ligação. Por outro lado, os estudos de associação geraram dados interessantes, mas ainda vagos. Os estudos de populações de pacientes homogêneos e a melhor definição do fenótipo deverão contribuir para avanços futuros. A identificação dos genes relacionados ao transtorno bipolar irá permitir o melhor entendimento e tratamento dessa doença.

  13. Radiation tolerance of NPN bipolar technology with 30 GHz Ft

    International Nuclear Information System (INIS)

    Flament, O.; Synold, S.; Pontcharra, J. de; Niel, S.

    1999-01-01

    The ionizing dose and neutron radiation tolerance of Si QSA bipolar technology has been investigated. The transistors exhibit good radiation tolerance up to 100 krad and 5 10 13 n/cm 2 without any special fabrication steps to harden the technology to the studied effects. (authors)

  14. Research of the voltage and current stabilization processes by using the silicon field-effect transistor

    International Nuclear Information System (INIS)

    Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

    2012-01-01

    The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

  15. Bipolar magnetic semiconductor in silicene nanoribbons

    International Nuclear Information System (INIS)

    Farghadan, Rouhollah

    2017-01-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  16. Bipolar magnetic semiconductor in silicene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Farghadan, Rouhollah, E-mail: rfarghadan@kashanu.ac.ir

    2017-08-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  17. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  18. Parasitic bipolar amplification in a single event transient and its temperature dependence

    International Nuclear Information System (INIS)

    Liu Zheng; Chen Shu-Ming; Chen Jian-Jun; Qin Jun-Rui; Liu Rong-Rong

    2012-01-01

    Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor

  19. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang

    2015-07-30

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  20. Experimental synchronization of chaos in a large ring of mutually coupled single-transistor oscillators: Phase, amplitude, and clustering effects

    Energy Technology Data Exchange (ETDEWEB)

    Minati, Ludovico, E-mail: lminati@ieee.org, E-mail: ludovico.minati@unitn.it [MR-Lab, Center for Mind/Brain Science, University of Trento, Italy and Scientific Department, Fondazione IRCCS Istituto Neurologico Carlo Besta, Milan (Italy)

    2014-12-01

    In this paper, experimental evidence of multiple synchronization phenomena in a large (n = 30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit, generating spikes of irregular amplitude and comprising one bipolar junction transistor, one capacitor, two inductors, and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased, phase synchronization followed by complete synchronization is observed, and onset of synchronization is associated with partial synchronization, i.e., emergence of communities (clusters). While component tolerances affect community structure, the general synchronization properties are maintained across three prototypes and in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes, but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators, demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure, synchronization, and dynamical properties.

  1. Experimental synchronization of chaos in a large ring of mutually coupled single-transistor oscillators: Phase, amplitude, and clustering effects

    International Nuclear Information System (INIS)

    Minati, Ludovico

    2014-01-01

    In this paper, experimental evidence of multiple synchronization phenomena in a large (n = 30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit, generating spikes of irregular amplitude and comprising one bipolar junction transistor, one capacitor, two inductors, and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased, phase synchronization followed by complete synchronization is observed, and onset of synchronization is associated with partial synchronization, i.e., emergence of communities (clusters). While component tolerances affect community structure, the general synchronization properties are maintained across three prototypes and in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes, but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators, demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure, synchronization, and dynamical properties

  2. Contribution to the study of the behaviour of silicon planar transistors exposed to the 60Co γ rays

    International Nuclear Information System (INIS)

    Le Ber, J.

    1967-05-01

    This report gives an account of studies carried out on bipolar silicon planar transistors irradiated by 60 Co γ rays. The author describes the interactions on the matter of the different types of particles and he gives a brief bibliographical recall of foreign studies. The technological structure of the planar transistors is then described in order to help the understanding of the phenomena, general comments are made about the choice of measured parameters and on the statistical interpretation of results. An automatic instrument for the measurement of the gain is described and the reproducibility of the results is stated The complexity of the problem and the difficulty to predict the behaviour of the semiconductors components are clearly shown. It is stated that the observed dispersions depend on: - the electrical bias during irradiation - the injection level in the emitter-base junction during the measurement - the manufacturer for a given type - the instantaneous dose rate - the geometry used The problem is then examined from the reliability point of view and methods are given to evaluate the reliability for a given dose - 'Worst case' method - moment method - Monte Carlo method. (author) [fr

  3. Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

    International Nuclear Information System (INIS)

    Kim, N.; Cheong, Y.; Song, W.

    2010-01-01

    We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

  4. Synergistic effect of mixed neutron and gamma irradiation in bipolar operational amplifier OP07

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Liu, E-mail: liuyan@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an 710024 (China); School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Chen; Shanchao, Yang; Xiaoming, Jin [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an 710024 (China); Chaohui, He [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China)

    2016-09-21

    This paper presents the synergistic effects in bipolar operational amplifier OP07. The radiation effects are studied by neutron beam, gamma ray, and mixed neutron/gamma ray environments. The characterateristics of the synergistic effects are studied through comparison of different experiment results. The results show that the bipolar operational amplifier OP07 exhibited significant synergistic effects in the mixed neutron and gamma irradiation. The bipolar transistor is identified as the most radiation sensitive unit of the operational amplifier. In this paper, a series of simulations are performed on bipolar transistors in different radiation environments. In the theoretical simulation, the geometric model and calculations based on the Medici toolkit are built to study the radiation effects in bipolar components. The effect of mixed neutron and gamma irradiation is simulated based on the understanding of the underlying mechanisms of radiation effects in bipolar transistors. The simulated results agree well with the experimental data. The results of the experiments and simulation indicate that the radiation effects in the bipolar devices subjected to mixed neutron and gamma environments is not a simple combination of total ionizing dose (TID) effects and displacement damage. The data suggests that the TID effect could enhance the displacement damage. The synergistic effect should not be neglected in complex radiation environments.

  5. Bipolar disorder in adolescence.

    Science.gov (United States)

    DeFilippis, Melissa; Wagner, Karen Dineen

    2013-08-01

    Bipolar disorder is a serious psychiatric condition that may have onset in childhood. It is important for physicians to recognize the symptoms of bipolar disorder in children and adolescents in order to accurately diagnose this illness early in its course. Evidence regarding the efficacy of various treatments is necessary to guide the management of bipolar disorder in youth. For example, several medications commonly used for adults with bipolar disorder have not shown efficacy for children and adolescents with bipolar disorder. This article reviews the prevalence, diagnosis, course, and treatment of bipolar disorder in children and adolescents and provides physicians with information that will aid in diagnosis and treatment.

  6. Transistor design considerations for low-noise preamplifiers

    International Nuclear Information System (INIS)

    Fair, R.B.

    1976-01-01

    A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiber-optic communication systems. Ultimate limits on performance are evaluated in terms of the g/sub m//C/sub i/ ratio and the gate leakage current to minimize the noise sources. Si bipolar transistors and the future prospects of GaAs, Si and InAs MISFETs are discussed, and performance is compared to FETs currently being used in low-noise preamplifiers

  7. Optimizing switching frequency of the soliton transistor by numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Izadyar, S., E-mail: S_izadyar@yahoo.co [Department of Electronics, Khaje Nasir Toosi University of Technology, Shariati Ave., Tehran (Iran, Islamic Republic of); Niazzadeh, M.; Raissi, F. [Department of Electronics, Khaje Nasir Toosi University of Technology, Shariati Ave., Tehran (Iran, Islamic Republic of)

    2009-10-15

    In this paper, by numerical simulations we have examined different ways to increase the soliton transistor's switching frequency. Speed of the solitons in a soliton transistor depends on various parameters such as the loss of the junction, the applied bias current, and the transmission line characteristics. Three different ways have been examined; (i) decreasing the size of the transistor without losing transistor effect. (ii) Decreasing the amount of loss of the junction to increase the soliton speed. (iii) Optimizing the bias current to obtain maximum possible speed. We have obtained the shortest possible length to have at least one working soliton inside the transistor. The dimension of the soliton can be decreased by changing the inductance of the transmission line, causing a further decrease in the size of the transistor, however, a trade off between the size and the inductance is needed to obtain the optimum switching speed. Decreasing the amount of loss can be accomplished by increasing the characteristic tunneling resistance of the device, however, a trade off is again needed to make soliton and antisoliton annihilation possible. By increasing the bias current, the forces acting the solitons increases and so does their speed. Due to nonuniform application of bias current a self induced magnetic field is created which can result in creation of unwanted solitons. Optimum bias current application can result in larger bias currents and larger soliton speed. Simulations have provided us with such an arrangement of bias current paths.

  8. Optimizing switching frequency of the soliton transistor by numerical simulation

    International Nuclear Information System (INIS)

    Izadyar, S.; Niazzadeh, M.; Raissi, F.

    2009-01-01

    In this paper, by numerical simulations we have examined different ways to increase the soliton transistor's switching frequency. Speed of the solitons in a soliton transistor depends on various parameters such as the loss of the junction, the applied bias current, and the transmission line characteristics. Three different ways have been examined; (i) decreasing the size of the transistor without losing transistor effect. (ii) Decreasing the amount of loss of the junction to increase the soliton speed. (iii) Optimizing the bias current to obtain maximum possible speed. We have obtained the shortest possible length to have at least one working soliton inside the transistor. The dimension of the soliton can be decreased by changing the inductance of the transmission line, causing a further decrease in the size of the transistor, however, a trade off between the size and the inductance is needed to obtain the optimum switching speed. Decreasing the amount of loss can be accomplished by increasing the characteristic tunneling resistance of the device, however, a trade off is again needed to make soliton and antisoliton annihilation possible. By increasing the bias current, the forces acting the solitons increases and so does their speed. Due to nonuniform application of bias current a self induced magnetic field is created which can result in creation of unwanted solitons. Optimum bias current application can result in larger bias currents and larger soliton speed. Simulations have provided us with such an arrangement of bias current paths.

  9. The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

    International Nuclear Information System (INIS)

    Horisberger, R.

    1990-01-01

    It is proposed to combine the technology of fully depleted microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. The resulting structure has amplifying properties and is referred to as bipaolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. (orig.)

  10. Cytokines in bipolar disorder

    DEFF Research Database (Denmark)

    Munkholm, Klaus; Vinberg, Maj; Vedel Kessing, Lars

    2012-01-01

    BACKGROUND: Current research and hypothesis regarding the pathophysiology of bipolar disorder suggests the involvement of immune system dysfunction that is possibly related to disease activity. Our objective was to systematically review evidence of cytokine alterations in bipolar disorder according...... to affective state. METHODS: We conducted a systemtic review of studies measuring endogenous cytokine concentrations in patients with bipolar disorder and a meta-analysis, reporting results according to the PRISMA statement. RESULTS: Thirteen studies were included, comprising 556 bipolar disorder patients...

  11. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  12. SOI Transistor measurement techniques using body contacted transistors

    International Nuclear Information System (INIS)

    Worley, E.R.; Williams, R.

    1989-01-01

    Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

  13. A neuron-astrocyte transistor-like model for neuromorphic dressed neurons.

    Science.gov (United States)

    Valenza, G; Pioggia, G; Armato, A; Ferro, M; Scilingo, E P; De Rossi, D

    2011-09-01

    Experimental evidences on the role of the synaptic glia as an active partner together with the bold synapse in neuronal signaling and dynamics of neural tissue strongly suggest to investigate on a more realistic neuron-glia model for better understanding human brain processing. Among the glial cells, the astrocytes play a crucial role in the tripartite synapsis, i.e. the dressed neuron. A well-known two-way astrocyte-neuron interaction can be found in the literature, completely revising the purely supportive role for the glia. The aim of this study is to provide a computationally efficient model for neuron-glia interaction. The neuron-glia interactions were simulated by implementing the Li-Rinzel model for an astrocyte and the Izhikevich model for a neuron. Assuming the dressed neuron dynamics similar to the nonlinear input-output characteristics of a bipolar junction transistor, we derived our computationally efficient model. This model may represent the fundamental computational unit for the development of real-time artificial neuron-glia networks opening new perspectives in pattern recognition systems and in brain neurophysiology. Copyright © 2011 Elsevier Ltd. All rights reserved.

  14. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz ..., we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...... when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage. ©1998 American Institute of Physics....

  15. Radiation-stimulated processes in transistor temperature sensors

    International Nuclear Information System (INIS)

    Pavlyk, B. V.; Grypa, A. S.

    2016-01-01

    The features of the radiation-stimulated changes in the I–V and C–V characteristics of the emitter–base junction in KT3117 transistors are considered. It is shown that an increase in the current through the emitter junction is observed at the initial stage of irradiation (at doses of D < 4000 Gy for the “passive” irradiation mode and D < 5200 Gy for the “active” mode), which is caused by the effect of radiation-stimulated ordering of the defect-containing structure of the p–n junction. It is also shown that the X-ray irradiation (D < 14000 Gy), the subsequent relaxation (96 h), and thermal annealing (2 h at 400 K) of the transistor temperature sensors under investigation result in an increase in their radiation resistance.

  16. Nutrition and Bipolar Depression.

    Science.gov (United States)

    Beyer, John L; Payne, Martha E

    2016-03-01

    As with physical conditions, bipolar disorder is likely to be impacted by diet and nutrition. Patients with bipolar disorder have been noted to have relatively unhealthy diets, which may in part be the reason they also have an elevated risk of metabolic syndrome and obesity. An improvement in the quality of the diet should improve a bipolar patient's overall health risk profile, but it may also improve their psychiatric outcomes. New insights into biological dysfunctions that may be present in bipolar disorder have presented new theoretic frameworks for understanding the relationship between diet and bipolar disorder. Copyright © 2016 Elsevier Inc. All rights reserved.

  17. Relaxation of Si-SiO2 interfacial stress in bipolar screen oxides due to ionizing radiation

    International Nuclear Information System (INIS)

    Witczak, S.C.; Galloway, K.F.; Schrimpf, R.D.; Suehle, J.S.

    1995-01-01

    Current gain degradation due to ionizing radiation in complementary single-crystalline emitter bipolar transistors was found to grow progressively worse upon subjecting the transistors to repeated cycles of radiation exposure and high-temperature anneal. The increase in radiation sensitivity is independent of the emitter polarity or geometry and is most dramatic between the first and second radiation and anneal cycles. In parallel with the current gain measurements, samples from a monitor wafer simulating the screen oxide region above the extrinsic base in the npn transistors were measured for mechanical stress while undergoing similar cycles of irradiation and anneal. The oxide on the monitor wafer consisted of a 45 nm thermal layer and a 640 nm deposited layer. The results indicate that ionizing radiation helped relieve compressive stress at the Si surface. The magnitude of the stress change due to radiation is smaller than the stress induced by the emitter contact metallization followed by a post-metallization anneal. Correlation of radiation sensitivity in the bipolar transistors and mechanical stress in the monitor wafer suggests that mechanical stress may be influential in determining the radiation hardness of bipolar transistors and lends validation to previously reported observations that Si-SiO 2 interfaces are increasingly more susceptible to radiation damage with decreasing Si compressive stress. Possible mechanisms for the observed changes in stress and their effect on the radiation sensitivity of the bipolar transistors are discussed

  18. High-performance silicon nanowire bipolar phototransistors

    Science.gov (United States)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  19. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha

    2014-01-01

    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  20. Bipolar soft connected, bipolar soft disconnected and bipolar soft compact spaces

    Directory of Open Access Journals (Sweden)

    Muhammad Shabir

    2017-06-01

    Full Text Available Bipolar soft topological spaces are mathematical expressions to estimate interpretation of data frameworks. Bipolar soft theory considers the core features of data granules. Bipolarity is important to distinguish between positive information which is guaranteed to be possible and negative information which is forbidden or surely false. Connectedness and compactness are the most important fundamental topological properties. These properties highlight the main features of topological spaces and distinguish one topology from another. Taking this into account, we explore the bipolar soft connectedness, bipolar soft disconnectedness and bipolar soft compactness properties for bipolar soft topological spaces. Moreover, we introduce the notion of bipolar soft disjoint sets, bipolar soft separation, and bipolar soft hereditary property and study on bipolar soft connected and disconnected spaces. By giving the detailed picture of bipolar soft connected and disconnected spaces we investigate bipolar soft compact spaces and derive some results related to this concept.

  1. Current-Induced Transistor Sensorics with Electrogenic Cells

    Directory of Open Access Journals (Sweden)

    Peter Fromherz

    2016-04-01

    Full Text Available The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned.

  2. Junction depth measurement using carrier illumination

    International Nuclear Information System (INIS)

    Borden, Peter

    2001-01-01

    Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

  3. Genetics Home Reference: bipolar disorder

    Science.gov (United States)

    ... Email Facebook Twitter Home Health Conditions Bipolar disorder Bipolar disorder Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Bipolar disorder is a mental health condition that causes extreme ...

  4. BIPOLAR DISORDER: A REVIEW

    OpenAIRE

    Pathan Dilnawaz N; Ziyaurrahaman A.R; Bhise K.S.

    2010-01-01

    Bipolar disorder (BD) is a severe psychiatric disorder that results in poor global functioning, reduced quality of life and high relapse rates. Research finds that many adults with bipolar disorder identify the onset of symptoms in childhood and adolescence, indicating the importance of early accurate diagnosis and treatment. Accurate diagnosis of mood disorders is critical for treatment to be effective. Distinguishing between major depression and bipolar disorders, especially the depressed p...

  5. Contribution to the study of the behaviour of silicon planar transistors exposed to the {sup 60}Co {gamma} rays; Contribution a l'etude du comportement des transistors silicium a structure plane soumis aux rayons {gamma} du {sup 60}Co

    Energy Technology Data Exchange (ETDEWEB)

    Le Ber, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1967-05-15

    This report gives an account of studies carried out on bipolar silicon planar transistors irradiated by {sup 60}Co {gamma} rays. The author describes the interactions on the matter of the different types of particles and he gives a brief bibliographical recall of foreign studies. The technological structure of the planar transistors is then described in order to help the understanding of the phenomena, general comments are made about the choice of measured parameters and on the statistical interpretation of results. An automatic instrument for the measurement of the gain is described and the reproducibility of the results is stated The complexity of the problem and the difficulty to predict the behaviour of the semiconductors components are clearly shown. It is stated that the observed dispersions depend on: - the electrical bias during irradiation - the injection level in the emitter-base junction during the measurement - the manufacturer for a given type - the instantaneous dose rate - the geometry used The problem is then examined from the reliability point of view and methods are given to evaluate the reliability for a given dose - 'Worst case' method - moment method - Monte Carlo method. (author) [French] Ce rapport rend compte du travail effectue sur les transistors bipolaires au silicium irradies au rayons {gamma} du cobalt 60. On passe en revue les mecanismes d'interaction des differents rayonnements avec la matiere et on fait un bref rappel bibliographique des etudes effectuees a l'etranger. On decrit ensuite la structure technologique du transistor pour aider a la comprehension des phenomenes, puis on donne des generalites sur le choix des parametres mesures et l'interpretation statistique des resultats. On decrit l'ensemble du systeme de mesure de gain et on s'attache a montrer la reproductibilite des mesures. Les resultats experimentaux mentionnes etablissent clairement la complexite du probleme et la difficulte qu'il y a de faire des previsions. On

  6. Bipolar Disorder in Women

    Directory of Open Access Journals (Sweden)

    Sermin Kesebir

    2013-06-01

    Full Text Available The research on gender's role in bipolar disorders has drawn significant interest recently. The presentation and course of bipolar disorder differs between women and men. Women experience depressive episodes, dysphoric mood, mixed states, rapid cycling and seasonal patterns more often than men. Comorbidity, particularly thyroid disease, migraine, obesity, and anxiety disorders laso occur more frequently in women than men. On the other hand men with bipolar disorder are also more likely than women to have problems with drug or alcohol abuse. The pregnancy and postpartum period is a time of high risk for onset and recurrence of bipolar disorder in women.

  7. Comparative familial aggregation of bipolar disorder in patients with bipolar I and bipolar II disorders.

    Science.gov (United States)

    Parker, Gordon B; Romano, Mia; Graham, Rebecca K; Ricciardi, Tahlia

    2018-05-01

    We sought to quantify the prevalence and differential prevalence of a bipolar disorder among family members of patients with a bipolar I or II disorder. The sample comprised 1165 bipolar and 1041 unipolar patients, with the former then sub-typed as having either a bipolar I or II condition. Family history data was obtained via an online self-report tool. Prevalence of a family member having a bipolar disorder (of either sub-type) was distinctive (36.8%). Patients with a bipolar I disorder reported a slightly higher family history (41.2%) compared to patients with a bipolar II disorder (36.3%), and with both significantly higher than the rate of bipolar disorder in family members of unipolar depressed patients (18.5%). Findings support the view that bipolar disorder is heritable. The comparable rates in the two bipolar sub-types support the positioning of bipolar II disorder as a valid condition with strong genetic underpinnings.

  8. Calculation of comparators of analog-to-digital converters with account of electric regime of transistor operation and ionizing radiation effect; Raschet komparatov analogo-tsifrovykh preobrazovatelej s uchetom ehlektricheskogo rezhima raboty tranzistorov i vozdejstviya ioniziruyushchego izlucheniya

    Energy Technology Data Exchange (ETDEWEB)

    Ragozin, A Yu

    1994-12-31

    Zero shift voltage in comparators of analog-to-digital converters under gamma irradiation with regard to electric mode effect on bipolar transistor degradation is calculated. It is shown that the input range of comparators such weak units are represented by comparators of bipolar and lower grades.

  9. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  10. Properties of Bipolar Fuzzy Hypergraphs

    OpenAIRE

    Akram, M.; Dudek, W. A.; Sarwar, S.

    2013-01-01

    In this article, we apply the concept of bipolar fuzzy sets to hypergraphs and investigate some properties of bipolar fuzzy hypergraphs. We introduce the notion of $A-$ tempered bipolar fuzzy hypergraphs and present some of their properties. We also present application examples of bipolar fuzzy hypergraphs.

  11. Outlook and emerging semiconducting materials for ambipolar transistors.

    Science.gov (United States)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-02-26

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Principles of transistor circuits introduction to the design of amplifiers, receivers and digital circuits

    CERN Document Server

    Amos, S W

    1990-01-01

    Principles of Transistor Circuits, Seventh Edition discusses the fundamental concepts of transistor circuits. The book is comprised of 16 chapters that cover amplifiers, oscillators, and generators. Chapter 1 discusses semiconductors and junction nodes, while Chapter 2 covers the basic principles of transistors. The subsequent chapters focus on amplifiers, where one of the chapters discusses bias and D.C. The book also talks about sinusoidal oscillators and covers modulators, demodulators, mixers, and receivers. Chapters 13 and 14 discuss pulse generators and sawtooth generators, respectively.

  13. Planar transistors and impatt diodes with ion implantation

    International Nuclear Information System (INIS)

    Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

    1975-03-01

    Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

  14. Noise characteristics of single-walled carbon nanotube network transistors

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

    2008-01-01

    The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors

  15. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  16. Organic electrochemical transistors

    KAUST Repository

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Ró isí n M.; Berggren, Magnus; Malliaras, George G.

    2018-01-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume

  17. Vertical organic transistors.

    Science.gov (United States)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-11

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  18. Bipolar Disorder in Children

    Science.gov (United States)

    2014-01-01

    Although bipolar disorder historically was thought to only occur rarely in children and adolescents, there has been a significant increase in children and adolescents who are receiving this diagnosis more recently (Carlson, 2005). Nonetheless, the applicability of the current bipolar disorder diagnostic criteria for children, particularly preschool children, remains unclear, even though much work has been focused on this area. As a result, more work needs to be done to further the understanding of bipolar symptoms in children. It is hoped that this paper can assist psychologists and other health service providers in gleaning a snapshot of the literature in this area so that they can gain an understanding of the diagnostic criteria and other behaviors that may be relevant and be informed about potential approaches for assessment and treatment with children who meet bipolar disorder criteria. First, the history of bipolar symptoms and current diagnostic criteria will be discussed. Next, assessment strategies that may prove helpful for identifying bipolar disorder will be discussed. Then, treatments that may have relevance to children and their families will be discussed. Finally, conclusions regarding work with children who may have a bipolar disorder diagnosis will be offered. PMID:24800202

  19. Fabrication of a Silicon MOSFET Device with Bipolar Transistor Source,

    Science.gov (United States)

    1980-07-01

    NEGATIVE PHOTORESIST PROCEDURE ’•J n •:• fi >. 3 u i fc- Process Coat wafer Air dry Pre bake the resist coating Expose Develop Method Time...Orange (rather broad for orange) 0.82 Salmon 0.85 Dull, light red-violet 0.86 Violet £ 0.87 Blue-violet 0.89 Blue ::’ 0.92 V Blue-green •I 0.95

  20. Development of insulated gate bipolar transistor-based power ...

    Indian Academy of Sciences (India)

    [5] S V Nakhe et al, National Laser Symposium, 81–82 (2001). [6] E G Cook et al, 8th IEEE Pulsed Power Conference, June 1991. [7] L Druckmann et al, IEEE Power Modulator Symposium, 213–216 (1992). [8] Hybrid gate drivers and gate drive power supplies, M57962L datasheet from Mitsubishi. Electric Corpn. Pramana ...

  1. Heuristic for Learning Common Emitter Amplification with Bipolar Transistors

    Science.gov (United States)

    Staffas, Kjell

    2017-01-01

    Mathematics in engineering education causes many thresholds in the courses because of the demand of abstract conceptualisation. Electronics depend heavily on more or less complex mathematics. Therefore the concepts of analogue electronics are hard to learn since a great deal of students struggle with the calculations and procedures needed. A…

  2. What is Bipolar Disorder?

    Science.gov (United States)

    ... down” Have trouble sleeping Think about death or suicide Can someone have bipolar disorder along with other problems? Yes. Sometimes people having very strong mood episodes may have psychotic symptoms. Psychosis affects thoughts ...

  3. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  4. Electroluminescence from single-wall carbon nanotube network transistors.

    Science.gov (United States)

    Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

    2008-08-01

    The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

  5. Electron irradiation of power transistors

    International Nuclear Information System (INIS)

    Hower, P.L.; Fiedor, R.J.

    1982-01-01

    A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

  6. 75 GHz InP DHBT power amplifier based on two-stacked transistors

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

    2017-01-01

    In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

  7. Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

    International Nuclear Information System (INIS)

    Musseau, O.; Leray, J.L.; Ferlet, V.; Umbert, A.; Coic, Y.M.; Hesto, P.

    1991-01-01

    We have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Our physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor. Based on carrier transport and charge collection, the sensitivity of future scaled down CMOS/SOI technologies is finally discussed

  8. Bipolar Affective Disorder and Migraine

    Directory of Open Access Journals (Sweden)

    Birk Engmann

    2012-01-01

    Full Text Available This paper consists of a case history and an overview of the relationship, aetiology, and treatment of comorbid bipolar disorder migraine patients. A MEDLINE literature search was used. Terms for the search were bipolar disorder bipolar depression, mania, migraine, mood stabilizer. Bipolar disorder and migraine cooccur at a relatively high rate. Bipolar II patients seem to have a higher risk of comorbid migraine than bipolar I patients have. The literature on the common roots of migraine and bipolar disorder, including both genetic and neuropathological approaches, is broadly discussed. Moreover, bipolar disorder and migraine are often combined with a variety of other affective disorders, and, furthermore, behavioural factors also play a role in the origin and course of the diseases. Approach to treatment options is also difficult. Several papers point out possible remedies, for example, valproate, topiramate, which acts on both diseases, but no first-choice treatments have been agreed upon yet.

  9. Depression and Bipolar Support Alliance

    Science.gov (United States)

    Depression and Bipolar Support Alliance Crisis Hotline Information Coping with a Crisis Suicide Prevention Information Psychiatric Hospitalization ... sign-up Education info, training, events Mood Disorders Depression Bipolar Disorder Anxiety Screening Center Co-occurring Illnesses/ ...

  10. Bipolar Disorder and Cancer

    Directory of Open Access Journals (Sweden)

    Sermin Kesebir

    2012-06-01

    Full Text Available Prevalence studies and studies on causation relations have shown that the relation between psychiatric disorders and chronic physical diseases is neglected. For heterogeneous diseases an increasing number of susceptibility variants are being defined. Alzheimer disease, bipolar disorder, breast and prostate cancer, coronary artery disease, Chron's disease, systemic lupus eritematosus, type 1 and type 2 diabetes mellitus are mentioned together with epigenetic concept. In acrocentric zone of chromosome 13, breast cancer, retinoblastoma, chronic Iymphocytic leukemia genes with B cells, dopamin loci of bipolar disorder are found together. Among bipolar and healthy individuals, an increase risk of breast cancer in female cases has been resported. On the other hand, psychosocial factors that affect stress and response to stress itself may be important variables in prognosis and progression of different cancer types. During the course of many cancer types –especially brain tumors- and during treatment of chemotherapeutic agents, bipolar symptomatology may appear. In this article, it is reviewed with relevant literature that whether an etiological relation between bipolar disorder and cancer exist and how both diseases affect each other's course and treatment.

  11. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  12. Accelerating the life of transistors

    International Nuclear Information System (INIS)

    Qi Haochun; Lü Changzhi; Zhang Xiaoling; Xie Xuesong

    2013-01-01

    Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object, the test of accelerating life is conducted in constant temperature and humidity, and then the data are statistically analyzed with software developed by ourselves. According to degradations of such sensitive parameters as the reverse leakage current of transistors, the lifetime order of transistors is about more than 10 4 at 100 °C and 100% relative humidity (RH) conditions. By corrosion fracture of transistor outer leads and other failure modes, with the failure truncated testing, the average lifetime rank of transistors in different distributions is extrapolated about 10 3 . Failure mechanism analyses of degradation of electrical parameters, outer lead fracture and other reasons that affect transistor lifetime are conducted. The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation. (semiconductor devices)

  13. Technique for selection of transient radiation-hard junction-isolated integrated circuits

    International Nuclear Information System (INIS)

    Crowley, J.L.; Junga, F.A.; Stultz, T.J.

    1976-01-01

    A technique is presented which demonstrates the feasibility of selecting junction-isolated integrated circuits (JI/ICS) for use in transient radiation environments. The procedure guarantees that all PNPN paths within the integrated circuit are identified and describes the methods used to determine whether the paths represent latchup susceptible structures. Two examples of the latchup analysis are given involving an SSI and an LSI bipolar junction-isolated integrated circuit

  14. Vertical organic transistors

    International Nuclear Information System (INIS)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-01-01

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted. (topical review)

  15. Photosensitive graphene transistors.

    Science.gov (United States)

    Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

    2014-08-20

    High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  17. The physical analysis on electrical junction of junctionless FET

    Directory of Open Access Journals (Sweden)

    Lun-Chun Chen

    2017-02-01

    Full Text Available We propose the concept of the electrical junction in a junctionless (JL field-effect-transistor (FET to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction. Though the dopant and the dosage of the source, of the drain, and of the channel are exactly the same in the JL FET, the transfer characteristics of the JL FET is similar to these of the conventional inversion-mode FET rather than these of a resistor, which is because of the electrical junction at the boundary of the gate and the drain in the JL FET. The electrical junction helps us to understand the JL FET, and also to explain the superior transfer characteristic of the JL FET with the gated raised S/D (Gout structure which reveals low drain-induced-barrier-lowering (DIBL and low breakdown voltage of ion impact ionization.

  18. Development and characterization of vertical double-gate MOS field-effect transistors

    International Nuclear Information System (INIS)

    Trellenkamp, S.

    2004-07-01

    Planar MOS-field-effect transistors are common devices today used by the computer industry. When their miniaturization reaches its limit, alternate transistor concepts become necessary. In this thesis the development of vertical Double-Gate-MOS-field-effect transistors is presented. These types of transistors have a vertically aligned p-n-p junction (or n-p-n junction, respectively). Consequently, the source-drain current flows perpendicular with respect to the surface of the wafer. A Double-Gate-field-effect transistor is characterized by a very thin channel region framed by two parallel gates. Due to the symmetry of the structure and less bulk volume better gate control and hence better short channel behavior is expected, as well as an improved scaling potential. Nanostructuring of the transistor's active region is very challenging. Approximately 300 nm high and down to 30 nm wide silicon ridges are requisite. They can be realized using hydrogen silsesquioxane (HSQ) as inorganic high resolution resist for electron beam lithography. Structures defined in HSQ are then transferred with high anisotropy and selectivity into silicon using ICP-RIE (reactive ion etching with inductive coupled plasma). 25 nm wide and 330 nm high silicon ridges are achieved. Different transistor layouts are realized. The channel length is defined by epitaxial growth of doped silicon layers before or by ion implantation after nanostructuring, respectively. The transistors show source-drain currents up to 380 μA/μm and transconductances up to 480 μS/μm. Improved short channel behavior for decreasing width of the silicon ridges is demonstrated. (orig.)

  19. Types of Bipolar Disorder

    Science.gov (United States)

    ... Events Home Science News Meetings and Events Multimedia Social Media Press Resources Newsletters NIMH News Feeds About Us ... has a lot of money, or has special powers. Someone having psychotic symptoms ... Substance Abuse: People with bipolar disorder may also misuse alcohol ...

  20. Discrete bipolar universal integrals

    Czech Academy of Sciences Publication Activity Database

    Greco, S.; Mesiar, Radko; Rindone, F.

    2014-01-01

    Roč. 252, č. 1 (2014), s. 55-65 ISSN 0165-0114 R&D Projects: GA ČR GAP402/11/0378 Institutional support: RVO:67985556 Keywords : bipolar integral * universal integral * Choquet integral Subject RIV: BA - General Mathematics Impact factor: 1.986, year: 2014 http://library.utia.cas.cz/separaty/2014/E/mesiar-0432224.pdf

  1. El trastorno bipolar

    OpenAIRE

    Freaza Rodríguez, Paula

    2014-01-01

    Se exponen los aspectos más relevantes del trastorno bipolar, entender qué significa este concepto, conocer los tipos que existen, qué otros trastornos suelen aparecer al mismo tiempo y qué tratamientos son los que dan mejores resultados

  2. Josephson junction arrays

    International Nuclear Information System (INIS)

    Bindslev Hansen, J.; Lindelof, P.E.

    1985-01-01

    In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

  3. Equivalent Josephson junctions

    International Nuclear Information System (INIS)

    Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

  4. Structured-gate organic field-effect transistors

    International Nuclear Information System (INIS)

    Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

    2012-01-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

  5. Structured-gate organic field-effect transistors

    Science.gov (United States)

    Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2012-06-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

  6. LTS junction technology for RSFQ and qubit circuit applications

    International Nuclear Information System (INIS)

    Buchholz, F.-Im.; Balashov, D.V.; Dolata, R.; Hagedorn, D.; Khabipov, M.I.; Kohlmann, J.; Zorin, A.B.; Niemeyer, J.

    2006-01-01

    The potentials of LTS junction technology and electronics offer innovative solutions for the processing of quantum information in RSFQ and qubit circuits. We discuss forthcoming approaches based on standard SIS technology and addressed to the development of new superconducting device concepts. The challenging problem of reducing back action noise of the RSFQ circuits deteriorating coherent properties of the qubit is currently solved by implementing Josephson junctions with non-linear shunts based on LTS SIS-SIN technology. Upgraded NbAlO x trilayer technology enables the fabrication of high-quality mesoscopic Josephson junction transistors down to the nanometer range suitable for a qubit-operation regime. As applications, circuit concepts are presented which combine superconducting devices of different nature

  7. ON BIPOLAR SINGLE VALUED NEUTROSOPHIC GRAPHS

    OpenAIRE

    Said Broumi; Mohamed Talea; Assia Bakali; Florentin Smarandache

    2016-01-01

    In this article, we combine the concept of bipolar neutrosophic set and graph theory. We introduce the notions of bipolar single valued neutrosophic graphs, strong bipolar single valued neutrosophic graphs, complete bipolar single valued neutrosophic graphs, regular bipolar single valued neutrosophic graphs and investigate some of their related properties.

  8. Investigation of effective base transit time and current gain modulation of light-emitting transistors under different ambient temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Hao-Hsiang; Tu, Wen-Chung; Wang, Hsiao-Lun [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Wu, Chao-Hsin, E-mail: chaohsinwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei106, Taiwan (China)

    2014-11-03

    In this report, the modulation of current gain of InGaP/GaAs light-emitting transistors under different ambient temperatures are measured and analyzed using thermionic emission model of quantum well embedded in the transistor base region. Minority carriers captured by quantum wells gain more energy at high temperatures and escape from quantum wells resulting in an increase of current gain and lower optical output, resulting in different I-V characteristics from conventional heterojunction bipolar transistors. The effect of the smaller thermionic lifetime thus reduces the effective base transit time of transistors at high temperatures. The unique current gain enhancement of 27.61% is achieved when operation temperature increase from 28 to 85 °C.

  9. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka

    2008-01-01

    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

  10. Organic electrochemical transistors

    Science.gov (United States)

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.

    2018-02-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  11. Organic electrochemical transistors

    KAUST Repository

    Rivnay, Jonathan

    2018-01-16

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  12. Supramolecular tunneling junctions

    NARCIS (Netherlands)

    Wimbush, K.S.

    2012-01-01

    In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

  13. Life expectancy in bipolar disorder

    DEFF Research Database (Denmark)

    Kessing, Lars Vedel; Vradi, Eleni; Andersen, Per Kragh

    2015-01-01

    OBJECTIVE: Life expectancy in patients with bipolar disorder has been reported to be decreased by 11 to 20 years. These calculations are based on data for individuals at the age of 15 years. However, this may be misleading for patients with bipolar disorder in general as most patients have a later...... onset of illness. The aim of the present study was to calculate the remaining life expectancy for patients of different ages with a diagnosis of bipolar disorder. METHODS: Using nationwide registers of all inpatient and outpatient contacts to all psychiatric hospitals in Denmark from 1970 to 2012 we...... remaining life expectancy in bipolar disorder and that of the general population decreased with age, indicating that patients with bipolar disorder start losing life-years during early and mid-adulthood. CONCLUSIONS: Life expectancy in bipolar disorder is decreased substantially, but less so than previously...

  14. [Bipolar disorder in adolescence].

    Science.gov (United States)

    Brunelle, Julie; Milhet, Vanessa; Consoli, Angèle; Cohen, David

    2014-04-01

    Juvenile mania is a concept widely developed but also highly debated since the 1990s. In the heart of this debate, Severe Mood Dysregulation (SMD) and "Temper Dysregulation disorder with Dysphoria" (recently integrated in DSM-5) showed their interest. Actually, the objective is to distinguish two clinical phenotypes in order to avoid confusion between (1) what would raise more of mood dysregulation with chronic manic like symptoms, and (2) bipolar disorder type I with episodic and acute manic episodes. Therapeutic stakes are major. In adolescents, even if DSM adult diagnostic criteria can be used and bipolar disorder type I clearly established, differential diagnostic at onset between acute manic episode and schizophrenia onset remain sometimes difficult to assess. Furthermore, it is crucial to better assess outcome of these adolescents, in terms of morbidity and potential prognosis factors, knowing that a younger age at onset is associated with a poorer outcome according to several adult studies. Therapeutic implications could then be drawn.

  15. Depressive and bipolar disorders

    DEFF Research Database (Denmark)

    Kessing, Lars Vedel; Hansen, Hanne Vibe; Demyttenaere, Koen

    2005-01-01

    of the patients (40-80%) had erroneous views as to the effect of antidepressants. Older patients (over 40 years of age) consistently had a more negative view of the doctor-patient relationship, more erroneous ideas concerning the effect of antidepressants and a more negative view of antidepressants in general....... Moreover, their partners agreed on these negative views. Women had a more negative view of the doctor-patient relationship than men, and patients with a depressive disorder had a more negative view of antidepressants than patients with bipolar disorder. The number of psychiatric hospitalizations......BACKGROUND: There is increasing evidence that attitudes and beliefs are important in predicting adherence to treatment and medication in depressive and bipolar disorders. However, these attitudes have received little study in patients whose disorders were sufficiently severe to require...

  16. Bipolar Plates for PEM Systems

    OpenAIRE

    Lædre, Sigrid

    2016-01-01

    Summary of thesis: The Bipolar Plate (BPP) is an important component in both Proton Exchange Membrane Fuel Cells (PEMFCs) and Proton Exchange Membrane Water Electrolyzers (PEMWEs). Bipolar plate material and processing constitutes for a large fraction of the cost and weight of a PEM cell stack. The main tasks for the bipolar plates in both systems are to separate single cell in a stack, conduct current between single cells and remove heat from active areas. In addition, the BPPs distribu...

  17. Modeling of transient ionizing radiation effects in bipolar devices at high dose-rates

    International Nuclear Information System (INIS)

    FJELDLY, T.A.; DENG, Y.; SHUR, M.S.; HJALMARSON, HAROLD P.; MUYSHONDT, ARNOLDO

    2000-01-01

    To optimally design circuits for operation at high intensities of ionizing radiation, and to accurately predict their a behavior under radiation, precise device models are needed that include both stationary and dynamic effects of such radiation. Depending on the type and intensity of the ionizing radiation, different degradation mechanisms, such as photoelectric effect, total dose effect, or single even upset might be dominant. In this paper, the authors consider the photoelectric effect associated with the generation of electron-hole pairs in the semiconductor. The effects of low radiation intensity on p-II diodes and bipolar junction transistors (BJTs) were described by low-injection theory in the classical paper by Wirth and Rogers. However, in BJTs compatible with modem integrated circuit technology, high-resistivity regions are often used to enhance device performance, either as a substrate or as an epitaxial layer such as the low-doped n-type collector region of the device. Using low-injection theory, the transient response of epitaxial BJTs was discussed by Florian et al., who mainly concentrated on the effects of the Hi-Lo (high doping - low doping) epilayer/substrate junction of the collector, and on geometrical effects of realistic devices. For devices with highly resistive regions, the assumption of low-level injection is often inappropriate, even at moderate radiation intensities, and a more complete theory for high-injection levels was needed. In the dynamic photocurrent model by Enlow and Alexander. p-n junctions exposed to high-intensity radiation were considered. In their work, the variation of the minority carrier lifetime with excess carrier density, and the effects of the ohmic electric field in the quasi-neutral (q-n) regions were included in a simplified manner. Later, Wunsch and Axness presented a more comprehensive model for the transient radiation response of p-n and p-i-n diode geometries. A stationary model for high-level injection in p

  18. [Creativity and bipolar disorder].

    Science.gov (United States)

    Maçkalı, Zeynep; Gülöksüz, Sinan; Oral, Timuçin

    2014-01-01

    The relationship between creativity and bipolar disorder has been an intriguing topic since ancient times. Early studies focused on describing characteristics of creative people. From the last quarter of the twentieth century, researchers began to focus on the relationship between mood disorders and creativity. Initially, the studies were based on biographical texts and the obtained results indicated a relationship between these two concepts. The limitations of the retrospective studies led the researchers to develop systematic investigations into this area. The systematic studies that have focused on artistic creativity have examined both the prevalence of mood disorders and the creative process. In addition, a group of researchers addressed the relationship in terms of affective temperaments. Through the end of the 90's, the scope of creativity was widened and the notion of everyday creativity was proposed. The emergence of this notion led researchers to investigate the associations of the creative process in ordinary (non-artist) individuals. In this review, the descriptions of creativity and creative process are mentioned. Also, the creative process is addressed with regards to bipolar disorder. Then, the relationship between creativity and bipolar disorder are evaluated in terms of aforementioned studies (biographical, systematic, psychobiographical, affective temperaments). In addition, a new model, the "Shared Vulnerability Model" which was developed to explain the relationship between creativity and psychopathology is introduced. Finally, the methodological limitations and the suggestions for resolving these limitations are included.

  19. Reviewing metallic PEMFC bipolar plates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H.; Turner, J.A. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-08-15

    A bipolar plate is one of the most important components in a polymer exchange membrane fuel cell (PEMFC) stack and has multiple functions. Metallic bipolar plate candidates have advantages over composite rivals in excellent electrical and thermal conductivity, good mechanical strength, high chemical stability, very wide alloy choices, low cost and, most importantly, existing pathways for high-volume, high-speed mass production. The challenges with metallic bipolar plates are the higher contact resistance and possible corrosion products, which may contaminate the membrane electrode assembly. This review evaluates the candidate metallic and coating materials for bipolar plates and gives the perspective of the research trends. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Principles of transistor circuits introduction to the design of amplifiers, receivers and digital circuits

    CERN Document Server

    Amos, S W

    2013-01-01

    Principles of Transistor Circuits: Sixth Edition discusses the principles, concepts, and practices involved integrated circuits. The current edition includes up-to-date circuits, the section on thyristors has been revised to give more information on modern types, and dated information has been eliminated. The book covers related topics such as semiconductors and junction diodes; the principles behind transistors; and common amplifiers. The book also covers bias and DC stabilization; large-signal and small-signal AF amplifiers; DC and pulse amplifiers; sinusoidal oscillators; pulse and sawtooth

  1. Band-to-band tunneling field effect transistor for low power logic and memory applications: Design, fabrication and characterization

    Science.gov (United States)

    Mookerjea, Saurabh A.

    Over the past decade the microprocessor clock frequency has hit a plateau. The main reason for this has been the inability to follow constant electric field scaling, which requires the transistor supply voltage to be scaled down as the transistor dimensions are reduced. Scaling the supply voltage down reduces the dynamic power quadratically but increases the static leakage power exponentially due to non-scalability of threshold voltage of the transistor, which is required to maintain the same ON state performance. This limitation in supply voltage scaling is directly related to MOSFET's (Metal Oxide Semiconductor Field Effect Transistor) sub-threshold slope (SS) limitation of 60 mV/dec at room temperature. Thus novel device design/materials are required that would allow the transistor to switch with sub-threshold slopes steeper than 60 mV/dec at room temperature, thus facilitating supply voltage scaling. Recently, a new class of devices known as super-steep slope (SSswitching behavior of TFET is studied through mixed-mode numerical simulations. The significance of correct benchmarking methodology to estimate the effective drive current and capacitance in TFET is highlighted and compared with MOSFET. This is followed by the fabrication details of homo-junction TFET. Analysis of the electrical characteristics of homo-junction TFET gives key insight into its device operation and identifies the critical factors that impact its performance. In order to boost the ON current, the design and fabrication of hetero-junction TFET is also presented.

  2. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Peter, I.; Frank, G.

    1977-01-01

    The performance of MOS transistors as gamma detectors has been tested. The dosimeter sensitivity has proved to be independent on the doses ranging from 10 3 to 10 6 R, and gamma energy of 137 Cs, 60 Co - sources and 5 - 18 MeV electrons. Fading of the space charge trapped by the SiO 2 layer of the transistor has appeared to be neglegible at room temperature after 400 hrs. The isochronous annealing in the temperature range of 40-260 deg C had a more substantial effect on the space charge of the transistor irradiated with 18 MeV electrons than on the 137 Cs gamma-irradiated transistors. This proved a repeated use of γ-dosemeters. MOS transistors are concluded to be promising for gamma dosimetry [ru

  3. Spin Hall effect transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

  4. Variability study of Si nanowire FETs with different junction gradients

    Directory of Open Access Journals (Sweden)

    Jun-Sik Yoon

    2016-01-01

    Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

  5. Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

    DEFF Research Database (Denmark)

    Luo, Haoze; Li, Wuhua; Iannuzzo, Francesco

    2018-01-01

    This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor (IGBT) modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified...

  6. The nonlinear carrier transport in a bipolar semiconductor sample

    International Nuclear Information System (INIS)

    Konin, A

    2008-01-01

    A theory of formation of the voltage across a bipolar semiconductor sample due to the current flow accounting for the energy band bending near the semiconductor surfaces is presented. The non-equilibrium space charge layers near the sample surfaces and the boundary conditions in the real metal-semiconductor junction have been taken into account. It is shown that the voltage-current relation of a thin sample at weak injection differs essentially from the classical Ohm's law and becomes nonlinear for certain semiconductor surface parameters. Complex voltage-current relations and the photo-induced electromotive force measurements allow determining the surface recombination rate in the real metal-semiconductor junction and the semiconductor surface potential

  7. Primary Tunnel Junction Thermometry

    International Nuclear Information System (INIS)

    Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

    2008-01-01

    We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

  8. Scientific attitudes towards bipolar disorders

    Directory of Open Access Journals (Sweden)

    Mohammad-Hossein Biglu

    2014-02-01

    Full Text Available Introduction: Bipolar disorder is a psychiatric condition that is also called manic-depressive disease. It causes unusual changes in mood, energy, activity levels, and the ability to carry out day-to-day tasks. In the present study, 3 sets of data were considered and analyzed: first, all papers categorized under Bipolar Disorders in Science Citation Index Expanded (SCI-E database through 2001-2011; second, papers published by the international journal of Bipolar Disorders indexed in SCI-E during a period of 11 years; and third, all papers distributed by the international journal of Bipolar Disorders indexed in MEDLINE during the period of study. Methods: The SCI-E database was used to extract all papers indexed with the topic of Bipolar Disorders as well as all papers published by The International Journal of Bipolar Disorders. Extraction of data from MEDLINE was restricted to the journals name from setting menu. The Science of Science Tool was used to map the co-authorship network of papers published by The International Journal of Bipolar Disorders through 2009-2011. Results: Analysis of data showed that the majority of publications in the subject area of bipolar disorders indexed in SCI-E were published by The International Journal of Bipolar Disorders. Although journal articles consisted of 59% of the total publication type in SCI-E, 65% of publications distributed by The Journal of Bipolar Disorders were in the form of meetingabstracts. Journal articles consisted of only 23% of the total publications. USA was the leading country regarding sharing data in the field of bipolar disorders followed by England, Canada, and Germany. Conclusion: The editorial policy of The International Journal of Bipolar Disorders has been focused on new themes and new ways of researching in the subject area of bipolar disorder. Regarding the selection of papers for indexing, the SCI-E database selects data more comprehensively than MEDLINE. The number of papers

  9. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  10. Physical limits of silicon transistors and circuits

    International Nuclear Information System (INIS)

    Keyes, Robert W

    2005-01-01

    A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented

  11. Epidemiology in Pediatric Bipolar Disorder

    Directory of Open Access Journals (Sweden)

    Caner Mutlu

    2015-12-01

    Full Text Available Childhood and adolescent bipolar disorder diagnosis has been increasing recently. Since studies evaluating attempted suicide rates in children and adolescents have shown bipolarity to be a significant risk factor, diagnosis and treatment of bipolarity has become a very important issue. Since there is a lack of specific diagnostic criteria for especially preadolescent samples and evaluations are made mostly symptomatically, suspicions about false true diagnosis and increased prevalence rates have emerged. This situation leads to controversial data about the prevalence rates of bipolar disorder in children and adolescents. The aim of this article is to review the prevalence of childhood and adolescent bipolar disorder in community, inpatient and outpatient based samples in literature.

  12. Genetics of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Kerner B

    2014-02-01

    Full Text Available Berit Kerner Semel Institute for Neuroscience and Human Behavior, University of California, Los Angeles, Los Angeles, CA, USA Abstract: Bipolar disorder is a common, complex genetic disorder, but the mode of transmission remains to be discovered. Many researchers assume that common genomic variants carry some risk for manifesting the disease. The research community has celebrated the first genome-wide significant associations between common single nucleotide polymorphisms (SNPs and bipolar disorder. Currently, attempts are under way to translate these findings into clinical practice, genetic counseling, and predictive testing. However, some experts remain cautious. After all, common variants explain only a very small percentage of the genetic risk, and functional consequences of the discovered SNPs are inconclusive. Furthermore, the associated SNPs are not disease specific, and the majority of individuals with a “risk” allele are healthy. On the other hand, population-based genome-wide studies in psychiatric disorders have rediscovered rare structural variants and mutations in genes, which were previously known to cause genetic syndromes and monogenic Mendelian disorders. In many Mendelian syndromes, psychiatric symptoms are prevalent. Although these conditions do not fit the classic description of any specific psychiatric disorder, they often show nonspecific psychiatric symptoms that cross diagnostic boundaries, including intellectual disability, behavioral abnormalities, mood disorders, anxiety disorders, attention deficit, impulse control deficit, and psychosis. Although testing for chromosomal disorders and monogenic Mendelian disorders is well established, testing for common variants is still controversial. The standard concept of genetic testing includes at least three broad criteria that need to be fulfilled before new genetic tests should be introduced: analytical validity, clinical validity, and clinical utility. These criteria are

  13. Copper atomic-scale transistors.

    Science.gov (United States)

    Xie, Fangqing; Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen; Schimmel, Thomas

    2017-01-01

    We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO 4 + H 2 SO 4 ) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes ( U bias ) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1 G 0 ( G 0 = 2e 2 /h; with e being the electron charge, and h being Planck's constant) or 2 G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  14. Early Intervention in Bipolar Disorder.

    Science.gov (United States)

    Vieta, Eduard; Salagre, Estela; Grande, Iria; Carvalho, André F; Fernandes, Brisa S; Berk, Michael; Birmaher, Boris; Tohen, Mauricio; Suppes, Trisha

    2018-05-01

    Bipolar disorder is a recurrent disorder that affects more than 1% of the world population and usually has its onset during youth. Its chronic course is associated with high rates of morbidity and mortality, making bipolar disorder one of the main causes of disability among young and working-age people. The implementation of early intervention strategies may help to change the outcome of the illness and avert potentially irreversible harm to patients with bipolar disorder, as early phases may be more responsive to treatment and may need less aggressive therapies. Early intervention in bipolar disorder is gaining momentum. Current evidence emerging from longitudinal studies indicates that parental early-onset bipolar disorder is the most consistent risk factor for bipolar disorder. Longitudinal studies also indicate that a full-blown manic episode is often preceded by a variety of prodromal symptoms, particularly subsyndromal manic symptoms, therefore supporting the existence of an at-risk state in bipolar disorder that could be targeted through early intervention. There are also identifiable risk factors that influence the course of bipolar disorder, some of them potentially modifiable. Valid biomarkers or diagnosis tools to help clinicians identify individuals at high risk of conversion to bipolar disorder are still lacking, although there are some promising early results. Pending more solid evidence on the best treatment strategy in early phases of bipolar disorder, physicians should carefully weigh the risks and benefits of each intervention. Further studies will provide the evidence needed to finish shaping the concept of early intervention. AJP AT 175 Remembering Our Past As We Envision Our Future April 1925: Interpretations of Manic-Depressive Phases Earl Bond and G.E. Partridge reviewed a number of patients with manic-depressive illness in search of a unifying endo-psychic conflict. They concluded that understanding either phase of illness was "elusive" and

  15. Novel multiple criteria decision making methods based on bipolar neutrosophic sets and bipolar neutrosophic graphs

    OpenAIRE

    Muhammad, Akram; Musavarah, Sarwar

    2016-01-01

    In this research study, we introduce the concept of bipolar neutrosophic graphs. We present the dominating and independent sets of bipolar neutrosophic graphs. We describe novel multiple criteria decision making methods based on bipolar neutrosophic sets and bipolar neutrosophic graphs. We also develop an algorithm for computing domination in bipolar neutrosophic graphs.

  16. Neural Markers in Pediatric Bipolar Disorder and Familial Risk for Bipolar Disorder.

    Science.gov (United States)

    Wiggins, Jillian Lee; Brotman, Melissa A; Adleman, Nancy E; Kim, Pilyoung; Wambach, Caroline G; Reynolds, Richard C; Chen, Gang; Towbin, Kenneth; Pine, Daniel S; Leibenluft, Ellen

    2017-01-01

    Bipolar disorder (BD) is highly heritable. Neuroimaging studies comparing unaffected youth at high familial risk for BD (i.e., those with a first-degree relative with the disorder; termed "high-risk" [HR]) to "low-risk" (LR) youth (i.e., those without a first-degree relative with BD) and to patients with BD may help identify potential brain-based markers associated with risk (i.e., regions where HR+BD≠LR), resilience (HR≠BD+LR), or illness (BD≠HR+LR). During functional magnetic resonance imaging (fMRI), 99 youths (i.e., adolescents and young adults) aged 9.8 to 24.8 years (36 BD, 22 HR, 41 LR) performed a task probing face emotion labeling, previously shown to be impaired behaviorally in youth with BD and HR youth. We found three patterns of results. Candidate risk endophenotypes (i.e., where BD and HR shared deficits) included dysfunction in higher-order face processing regions (e.g., middle temporal gyrus, dorsolateral prefrontal cortex). Candidate resilience markers and disorder sequelae (where HR and BD, respectively, show unique alterations relative to the other two groups) included different patterns of neural responses across other regions mediating face processing (e.g., fusiform), executive function (e.g., inferior frontal gyrus), and social cognition (e.g., default network, superior temporal sulcus, temporo-parietal junction). If replicated in longitudinal studies and with additional populations, neural patterns suggesting risk endophenotypes could be used to identify individuals at risk for BD who may benefit from prevention measures. Moreover, information about risk and resilience markers could be used to develop novel treatments that recruit neural markers of resilience and attenuate neural patterns associated with risk. Clinical trial registration information-Studies of Brain Function and Course of Illness in Pediatric Bipolar Disorder and Child and Adolescent Bipolar Disorder Brain Imaging and Treatment Study; http://clinicaltrials.gov/; NCT

  17. Single-Molecule Electrochemical Transistor Utilizing a Nickel-Pyridyl Spinterface

    DEFF Research Database (Denmark)

    Brooke, Richard J.; Jin, Chengjun; Szumski, Doug S.

    2015-01-01

    Using a scanning tunnelling microscope break-junction technique, we produce 4,4′-bipyridine (44BP) single-molecule junctions with Ni and Au contacts. Electrochemical control is used to prevent Ni oxidation and to modulate the conductance of the devices via nonredox gating - the first time this has...... been shown using non-Au contacts. Remarkably the conductance and gain of the resulting Ni-44BP-Ni electrochemical transistors is significantly higher than analogous Au-based devices. Ab-initio calculations reveal that this behavior arises because charge transport is mediated by spin-polarized Ni d...

  18. Design of a Negative Differential Resistance Circuit Element Using Single-Electron Transistors

    Science.gov (United States)

    Dixon, D. C.; Heij, C. P.; Hadley, P.; Mooij, J. E.

    1998-03-01

    Electronic circuit elements displaying negative differential resistance (NDR), such as tunnel diodes, have a wide variety of device applications, including oscillators, amplifiers, logic, and memory. We present a two-terminal device using two single-electron transistors (SET's) that demonstrates an NDR profile tuneable with gate voltages. If the capacitive coupling between the SET's is sufficiently larger than the junction capacitances, the device exhibits multiply-peaked NDR, allowing its use as a multi-valued digital element. We will also report recent experimental progress in measurements of such a device, fabricated using standard Al tunnel junctions, but with an additional overlap capacitor to allow the required inter-SET coupling.

  19. Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

    International Nuclear Information System (INIS)

    Lin, Jyi-Tsong; Huang, Kuo-Dong; Hu, Shu-Fen

    2008-01-01

    In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P–N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 µm, whereas the conventional TFT suffers serious short channel effects at this gate length

  20. Bipolar pulse forming line

    Science.gov (United States)

    Rhodes, Mark A.

    2008-10-21

    A bipolar pulse forming transmission line module for linear induction accelerators having first, second, third, fourth, and fifth planar conductors which form an interleaved stack with dielectric layers between the conductors. Each conductor has a first end, and a second end adjacent an acceleration axis. The first and second planar conductors are connected to each other at the second ends, the fourth and fifth planar conductors are connected to each other at the second ends, and the first and fifth planar conductors are connected to each other at the first ends via a shorting plate adjacent the first ends. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short a high voltage from the first end of the third planar conductor to the first end of the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

  1. Sub-50 nm gate length SOI transistor development for high performance microprocessors

    International Nuclear Information System (INIS)

    Horstmann, M.; Greenlaw, D.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; Bentum, R. van; Grasshoff, G.; Schwan, C.; Cheek, J.; Buller, J.; Krishnan, S.; Raab, M.; Kepler, N.

    2004-01-01

    Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI transistors into volume manufacturing for high-speed microprocessors. The key innovations developed for this transistor in order to overcome classical gate oxide and L GATE scaling is an unique differential triple spacer structure, stressed overlayer films inducing strain in the Silicon channel and optimized junctions. This transistor structure yields an outstanding ring oscillator speed with an unloaded inverter delay of 5.5 ps. The found improvements are highly manufacturable and scaleable for future device technologies like FD SOI

  2. Homeostatic Plasticity Mediated by Rod-Cone Gap Junction Coupling in Retinal Degenerative Dystrophic RCS Rats

    Science.gov (United States)

    Hou, Baoke; Fu, Yan; Weng, Chuanhuang; Liu, Weiping; Zhao, Congjian; Yin, Zheng Qin

    2017-01-01

    Rod-cone gap junctions open at night to allow rod signals to pass to cones and activate the cone-bipolar pathway. This enhances the ability to detect large, dim objects at night. This electrical synaptic switch is governed by the circadian clock and represents a novel form of homeostatic plasticity that regulates retinal excitability according to network activity. We used tracer labeling and ERG recording in the retinae of control and retinal degenerative dystrophic RCS rats. We found that in the control animals, rod-cone gap junction coupling was regulated by the circadian clock via the modulation of the phosphorylation of the melatonin synthetic enzyme arylalkylamine N-acetyltransferase (AANAT). However, in dystrophic RCS rats, AANAT was constitutively phosphorylated, causing rod-cone gap junctions to remain open. A further b/a-wave ratio analysis revealed that dystrophic RCS rats had stronger synaptic strength between photoreceptors and bipolar cells, possibly because rod-cone gap junctions remained open. This was despite the fact that a decrease was observed in the amplitude of both a- and b-waves as a result of the progressive loss of rods during early degenerative stages. These results suggest that electric synaptic strength is increased during the day to allow cone signals to pass to the remaining rods and to be propagated to rod bipolar cells, thereby partially compensating for the weak visual input caused by the loss of rods. PMID:28473754

  3. Transistor and integrated circuit manufacture

    International Nuclear Information System (INIS)

    Colman, D.

    1978-01-01

    This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry. (author)

  4. High transconductance organic electrochemical transistors

    Science.gov (United States)

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-07-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

  5. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz; Lussem, Bjorn; Liu, Shiyi

    2017-01-01

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer

  6. High transconductance organic electrochemical transistors

    Science.gov (United States)

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-01-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

  7. Transistor and integrated circuit manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Colman, D

    1978-09-27

    This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry.

  8. Performance of Solution Processed Carbon Nanotube Field Effect Transistors with Graphene Electrodes

    OpenAIRE

    Gangavarapu, P R Yasasvi; Lokesh, Punith Chikkahalli; Bhat, K N; Naik, A K

    2016-01-01

    This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction using temperature dependent IV measurements. The estimated barrier height in our devices for both holes and electrons is close to zero or slightly negative indicating the Ohmic contact of graphene with the valence and conduction bands of CNTs. In addition,...

  9. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Frank, H.; Petr, I.

    1977-01-01

    The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 10 3 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10 -2 to 10 5 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137 Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137 Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO 2 layer an electron energy exists at which the size of the charge captured in SiO 2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron

  10. Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

    KAUST Repository

    Tang, Hao-Ling

    2017-11-29

    Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.

  11. Planar-Processed Polymer Transistors.

    Science.gov (United States)

    Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Lin, Yen-Fu; Li, Wenwu; Noh, Yong-Young

    2016-10-01

    Planar-processed polymer transistors are proposed where the effective charge injection and the split unipolar charge transport are all on the top surface of the polymer film, showing ideal device characteristics with unparalleled performance. This technique provides a great solution to the problem of fabrication limitations, the ambiguous operating principle, and the performance improvements in practical applications of conjugated-polymer transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Four-junction superconducting circuit

    Science.gov (United States)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  13. Asenapine for bipolar disorder

    Directory of Open Access Journals (Sweden)

    Scheidemantel T

    2015-12-01

    Full Text Available Thomas Scheidemantel,1 Irina Korobkova,2 Soham Rej,3,4 Martha Sajatovic1,2 1University Hospitals Case Medical Center, 2Case Western Reserve University School of Medicine, Cleveland, OH, USA; 3Department of Psychiatry, University of Toronto, Toronto, ON, 4Geri PARTy Research Group, Jewish General Hospital, Montreal, QC, Canada Abstract: Asenapine (Saphris® is an atypical antipsychotic drug which has been approved by the US Food and Drug Administration for the treatment of schizophrenia in adults, as well as the treatment of acute manic or mixed episodes of bipolar I in both adult and pediatric populations. Asenapine is a tetracyclic drug with antidopaminergic and antiserotonergic activity with a unique sublingual route of administration. In this review, we examine and summarize the available literature on the safety, efficacy, and tolerability of asenapine in the treatment of bipolar disorder (BD. Data from randomized, double-blind trials comparing asenapine to placebo or olanzapine in the treatment of acute manic or mixed episodes showed asenapine to be an effective monotherapy treatment in clinical settings; asenapine outperformed placebo and showed noninferior performance to olanzapine based on improvement in the Young Mania Rating Scale scores. There are limited data available on the use of asenapine in the treatment of depressive symptoms of BD, or in the maintenance phase of BD. The available data are inconclusive, suggesting the need for more robust data from prospective trials in these clinical domains. The most commonly reported adverse effect associated with use of asenapine is somnolence. However, the somnolence associated with asenapine use did not cause significant rates of discontinuation. While asenapine was associated with weight gain when compared to placebo, it appeared to be modest when compared to other atypical antipsychotics, and its propensity to cause increases in hemoglobin A1c or serum lipid levels appeared to be

  14. Is there a relationship between curvature and inductance in the Josephson junction?

    Science.gov (United States)

    Dobrowolski, T.; Jarmoliński, A.

    2018-03-01

    A Josephson junction is a device made of two superconducting electrodes separated by a very thin layer of isolator or normal metal. This relatively simple device has found a variety of technical applications in the form of Superconducting Quantum Interference Devices (SQUIDs) and Single Electron Transistors (SETs). One can expect that in the near future the Josephson junction will find applications in digital electronics technology RSFQ (Rapid Single Flux Quantum) and in the more distant future in construction of quantum computers. Here we concentrate on the relation of the curvature of the Josephson junction with its inductance. We apply a simple Capacitively Shunted Junction (CSJ) model in order to find condition which guarantees consistency of this model with prediction based on the Maxwell and London equations with Landau-Ginzburg current of Cooper pairs. This condition can find direct experimental verification.

  15. A bipolar analog front-end integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1993-11-01

    A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using AT ampersand T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Φ=10 14 protons/cm 2 have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process

  16. Tunable Nitride Josephson Junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.

  17. Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy

    Science.gov (United States)

    Suzuki, Takahiro; Yokogawa, Ryo; Oasa, Kohei; Nishiwaki, Tatsuya; Hamamoto, Takeshi; Ogura, Atsushi

    2018-05-01

    The trench gate structure is one of the promising techniques to reduce on-state resistance (R on) for silicon power devices, such as insulated gate bipolar transistors and power metal-oxide-semiconductor field-effect transistors. In addition, it has been reported that stress is induced around the trench gate area, modifying the carrier mobilities. We evaluated the one-dimensional distribution and anisotropic biaxial stress by quasi-line excitation and water-immersion Raman spectroscopy, respectively. The results clearly confirmed anisotropic biaxial stress in state-of-the-art silicon power devices. It is theoretically possible to estimate carrier mobility using piezoresistance coefficients and anisotropic biaxial stress. The electron mobility was increased while the hole mobility was decreased or remained almost unchanged in the silicon (Si) power device. The stress significantly modifies the R on of silicon power transistors. Therefore, their performance can be improved using the stress around the trench gate.

  18. Modeling suicide in bipolar disorders.

    Science.gov (United States)

    Malhi, Gin S; Outhred, Tim; Das, Pritha; Morris, Grace; Hamilton, Amber; Mannie, Zola

    2018-02-19

    Suicide is a multicausal human behavior, with devastating and immensely distressing consequences. Its prevalence is estimated to be 20-30 times greater in patients with bipolar disorders than in the general population. The burden of suicide and its high prevalence in bipolar disorders make it imperative that our current understanding be improved to facilitate prediction of suicide and its prevention. In this review, we provide a new perspective on the process of suicide in bipolar disorder, in the form of a novel integrated model that is derived from extant knowledge and recent evidence. A literature search of articles on suicide in bipolar disorder was conducted in recognized databases such as Scopus, PubMed, and PsycINFO using the keywords "suicide", "suicide in bipolar disorders", "suicide process", "suicide risk", "neurobiology of suicide" and "suicide models". Bibliographies of identified articles were further scrutinized for papers and book chapters of relevance. Risk factors for suicide in bipolar disorders are well described, and provide a basis for a framework of epigenetic mechanisms, moderated by neurobiological substrates, neurocognitive functioning, and social inferences within the environment. Relevant models and theories include the diathesis-stress model, the bipolar model of suicide and the ideation-to-action models, the interpersonal theory of suicide, the integrated motivational-volitional model, and the three-step theory. Together, these models provide a basis for the generation of an integrated model that illuminates the suicidal process, from ideation to action. Suicide is complex, and it is evident that a multidimensional and integrated approach is required to reduce its prevalence. The proposed model exposes and provides access to components of the suicide process that are potentially measurable and may serve as novel and specific therapeutic targets for interventions in the context of bipolar disorder. Thus, this model is useful not only

  19. Bipolar explosion models for hypernovae

    International Nuclear Information System (INIS)

    Maeda, Keiichi; Nomoto, Ken'ichi

    2003-01-01

    Bipolar explosion models for hypernovae (very energetic supernovae) are presented. These models provide a favorable situation to explain some unexpected features in observations of hypernovae, e.g., high velocity matter dominated by Fe and low velocity matter dominated by O. The overall abundance of these models gives a good fit, at least qualitatively, to abundances in extremely metal-poor stars. We suggest hypernovae be driven by bipolar jets and contribute significantly to the early Galactic chemical evolution

  20. Functional remediation for bipolar disorder

    OpenAIRE

    Martínez-Arán, Anabel, 1971-; Torrent, C.; Solé, B.; Bonnín, C.M.; Rosa, A.R.; Sánchez-Moreno, J.; Vieta i Pascual, Eduard, 1963-

    2014-01-01

    Neurocognitive impairment constitutes a core feature of bipolar illness. The main domains affected are verbal memory, attention, and executive functions. Deficits in these areas as well as difficulties to get functional remission seem to be increased associated with illness progression. Several studies have found a strong relationship between neurocognitive impairment and low functioning in bipolar disorder, as previously reported in other illnesses such as schizophrenia. Cognitive remediatio...

  1. Single Molecule Nanoelectrochemistry in Electrical Junctions.

    Science.gov (United States)

    Nichols, Richard J; Higgins, Simon J

    2016-11-15

    gating. This has been referred to as to a "single molecule transistor configuration" with the gate voltage being provided by the controllable potential achieved through the electrochemical double layer. It is shown how the electrolyte medium can control such gating, with ionic liquids providing more efficient gate coupling than aqueous electrolytes. Control of the conductance of viologen molecular wires can also be achieved by encapsulating the viologen redox moiety within a molecular cage, thereby controlling its immediate environment. Molecular conductance can also be gated through multiple redox states. This has been shown for the redox moiety pyrrolo-tetrathiafulvalene, which undergoes single molecule electrochemical transistor gating through three redox states in molecular junctions. Charge transport through this junction follows a two-step hopping mechanism, demonstrating the role of the redox center in electron transfer across the molecular bridge. Recent electrolyte gating studies of rigid, conjugated redox-active metal complexes with tailored terpyridine coordinating ligands and anchors are also presented. These aforementioned studies have all been performed with gold electrode contacts. The Account concludes with recent data showing that it is now possible to study single molecule electrochemical gating with nickel electrodes. This opens up new perspectives for studying interfacial charge transfer with a wide variety of other electrode materials including semiconductor electrodes and also points toward future opportunities for coupling molecular spintronics and nanoelectrochemistry.

  2. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.

    2012-01-01

    -performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising

  3. Contribution to the study of ionizing radiation effects on bipolar technologies: application to the hardening of integrated circuits

    International Nuclear Information System (INIS)

    Briand, R.

    2001-01-01

    The use of analog integrated circuits in radiation environments raises the problem of their behaviour with respect to the different effects induced by particles and radiations. The first chapter of this thesis presents the origins of radiations and the different topologies of bipolar transistors. The effects of ionizing radiations on bipolar components, like cumulative dose, dose rates, and single events, are detailed in three distinct chapters with the same scientifical approach. The simulation of the physical degradation phenomena of the components allows to establish original electrical models coming from the understanding of the induced mechanisms. These models are used to evaluate the degradations occurring in linear analogic circuits. Common and original hardening methods are presented, some of which are applied to bipolar integrated circuit technologies. Finally, experimental laser beam test techniques are presented, which are used to reproduce the dose rate and the single events. (J.S.)

  4. Nanofluidic Transistor Circuits

    Science.gov (United States)

    Chang, Hsueh-Chia; Cheng, Li-Jing; Yan, Yu; Slouka, Zdenek; Senapati, Satyajyoti

    2012-02-01

    Non-equilibrium ion/fluid transport physics across on-chip membranes/nanopores is used to construct rectifying, hysteretic, oscillatory, excitatory and inhibitory nanofluidic elements. Analogs to linear resistors, capacitors, inductors and constant-phase elements were reported earlier (Chang and Yossifon, BMF 2009). Nonlinear rectifier is designed by introducing intra-membrane conductivity gradient and by asymmetric external depletion with a reverse rectification (Yossifon and Chang, PRL, PRE, Europhys Lett 2009-2011). Gating phenomenon is introduced by functionalizing polyelectrolytes whose conformation is field/pH sensitive (Wang, Chang and Zhu, Macromolecules 2010). Surface ion depletion can drive Rubinstein's microvortex instability (Chang, Yossifon and Demekhin, Annual Rev of Fluid Mech, 2012) or Onsager-Wien's water dissociation phenomenon, leading to two distinct overlimiting I-V features. Bipolar membranes exhibit an S-hysteresis due to water dissociation (Cheng and Chang, BMF 2011). Coupling the hysteretic diode with some linear elements result in autonomous ion current oscillations, which undergo classical transitions to chaos. Our integrated nanofluidic circuits are used for molecular sensing, protein separation/concentration, electrospray etc.

  5. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  6. Quetiapine monotherapy for bipolar depression

    Directory of Open Access Journals (Sweden)

    Michael E Thase

    2008-03-01

    Full Text Available Michael E ThaseDepartments of Psychiatry, University of Pennsylvania School of Medicine, Philadelphia, PA, USA; the Philadelphia Veterans Affairs Medical Center, Philadelphia, PA, USA; and the University of Pittsburgh Medical Center, Pittsburgh, PA, USAAbstract: Bipolar depression is more common, disabling, and difficult-to-treat than the manic and hypomanic phases that define bipolar disorder. Unlike the treatment of so-called “unipolar” depressions, antidepressants generally are not indicated as monotherapies for bipolar depressions and recent studies suggest that - even when used in combination with traditional mood stabilizers – antidepressants may have questionable value for bipolar depression. The current practice is that mood stabilizers are initiated first as monotherapies; however, the antidepressant efficacy of lithium and valproate is modest at best. Within this context the role of atypical antipsychotics is being evaluated. The combination of olanzapine and the antidepressant fluoxetine was the first treatment to receive regulatory approval in the US specifically for bipolar I depression. Quetiapine was the second medication to be approved for this indication, largely as the result of two pivotal trials known by the acronyms of BOLDER (BipOLar DEpRession I and II. Both studies demonstrated that two doses of quetiapine (300 mg and 600 mg given once daily at bedtime were significantly more effective than placebo, with no increased risk of patients switching into mania. Pooling the two studies, quetiapine was effective for both bipolar I and bipolar II depressions and for patients with (and without a history of rapid cycling. The two doses were comparably effective in both studies. Although the efficacy of quetiapine monotherapy has been established, much additional research is necessary. Further studies are needed to more fully investigate dose-response relationships and comparing quetiapine monotherapy to other mood stabilizers

  7. The point of practical use for the transistor circuit

    International Nuclear Information System (INIS)

    1996-01-01

    This is comprised of eight chapters and goes as follows; what is transistor? the first step for use of transistor such as connection between power and signal source, static characteristic of transistor and equivalent circuit of transistor, design of easy small-signal amplifier circuit, design for amplification of electric power and countermeasure for prevention of trouble, transistor concerned interface, transistor circuit around micro computer, transistor in active use of FET and power circuit and transistor. It has an appendix on transistor and design of bias of FET circuits like small signal transistor circuit and FET circuit.

  8. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

    OpenAIRE

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

    2014-01-01

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical...

  9. Industrial and scientific technology research and development project in fiscal 1997 commissioned by the New Energy and Industrial Technology Development Organization. Research and development of superconducting materials and transistors (report on overall investigation of superconductive devices); 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo Shin energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku. Chodendo zairyo chodendo soshi no kenkyu kaihatsu (chodendo soshika gijutsu kaihatsu seika hokokusho)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This paper describes development of superconducting new function transistors. Fiscal 1997 as the final year of the project advanced improvement in such transistor-using processes as formation and micro-processing of superconducting thin films to show enhancement in characteristics of high-temperature superconducting transistors and possibility of their application utilizing their high speed motions. Furthermore, fundamental technologies were studied with an aim on junction transistors to be applied as circuits. For field effect transistors, evaluation was performed on critical current distribution of step-type particle boundary junction to make it possible to evaluate characteristics of hundreds of transistors. At the same time, a magnetic flux quantum parametron gate with three-layer structure was fabricated to identify its operation. In superconducting-base transistors, strong reflection was recognized on temperature dependence of permittivity of an Nb-doped strontium titanate substrate used for collectors, by which barrier height was reduced. In the junction transistor and circuit technology, isotropic ramp-edge junctions were fabricated, and so was a frequency divider circuit with single magnetic flux quantum mode operation for evaluating high-speed response characteristics. High time resolution current was observed successfully by using a high-temperature superconducting sampler system. 148 refs., 127 figs., 4 tabs.

  10. A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

    Science.gov (United States)

    Ghoreishi, Seyed Saleh; Saghafi, Kamyar; Yousefi, Reza; Moravvej-farshi, Mohammad Kazem

    2016-09-01

    In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. In the proposed structure, dual material gates with different work functions are used. Our investigations are based on numerical simulations which self-consistently solves the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). The proposed device shows lower off-current and on-off ratio becomes 5order of magnitude greater than the conventional device. Also two different short channel effects: Drain Induced Barrier Shortening (DIBS) and hot-electron effect are improved in the proposed device compare to the main structure.

  11. Integrated neurobiology of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Vladimir eMaletic

    2014-08-01

    Full Text Available From a neurobiological perspective there is no such thing as bipolar disorder. Rather, it is almost certainly the case that many somewhat similar, but subtly different, pathological conditions produce a disease state that we currently diagnose as bipolarity. This heterogeneity—reflected in the lack of synergy between our current diagnostic schema and our rapidly advancing scientific understanding of the condition—limits attempts to articulate an integrated perspective on bipolar disorder. However, despite these challenges, scientific findings in recent years are beginning to offer a provisional unified field theory of the disease. This theory sees bipolar disorder as a suite of related neurodevelopmental conditions with interconnected functional abnormalities that often appear early in life and worsen over time. In addition to accelerated loss of volume in brain areas known to be essential for mood regulation and cognitive function, consistent findings have emerged at a cellular level, providing evidence that bipolar disorder is reliably associated with dysregulation of glial-neuronal interactions. Among these glial elements are microglia—the brain’s primary immune elements, which appear to be overactive in the context of bipolarity. Multiple studies now indicate that inflammation is also increased in the periphery of the body in both the depressive and manic phases of the illness, with at least some return to normality in the euthymic state. These findings are consistent with changes in the HPA axis, which are known to drive inflammatory activation. In summary, the very fact that no single gene, pathway or brain abnormality is likely to ever account for the condition is itself an extremely important first step in better articulating an integrated perspective on both its ontological status and pathogenesis. Whether this perspective will translate into the discovery of innumerable more homogeneous forms of bipolarity is one of the great

  12. Transistor challenges - A DRAM perspective

    International Nuclear Information System (INIS)

    Faul, Juergen W.; Henke, Dietmar

    2005-01-01

    Key challenges of the transistor scaling from a DRAM perspective will be reviewed. Both, array transistors as well as DRAM support devices face challenges that differ essentially from high performance logic device scaling. As a major difference, retention time and standby current requirements characterize special boundary conditions in the DRAM device design. Array device scaling is determined by a chip size driven aggressive node scaling. To continue scaling, major innovations need to be introduced into state-of-the-art planar array transistors. Alternatively, non planar device concepts will have to be evaluated. Support device design for DRAMs is driven by today's market demand for increased chip performances at little to no extra cost. Major innovations are required to continue that path. Besides this strive for performance increase, special limitations for 'on pitch' circuits at the array edge will come up due to the aggressive cell size scaling

  13. Flexible Graphene Transistor Architecture for Optical Sensor Technology

    Science.gov (United States)

    Ordonez, Richard Christopher

    The unique electrical and optoelectronic properties of graphene allow tunable conductivity and broadband electromagnetic absorption that spans the ultraviolet and infrared regimes. However, in the current state-of-art graphene sensor architectures, junction resistance and doping concentration are predominant factors that affect signal strength and sensitivity. Unfortunately, graphene produces high contact resistances with standard electrode materials ( few kilo-ohms), therefore, signal is weak and large carrier concentrations are required to probe sensitivity. Moreover, the atomic thickness of graphene enables the potential for flexible electronics, but there has not been a successful graphene sensor architecture that demonstrates stable operation on flexible substrates and with minimal fabrication cost. In this study, the author explores a novel 3-terminal transistor architecture that integrates twodimensional graphene, liquid metal, and electrolytic gate dielectrics (LM-GFETs: Liquid Metal and Graphene Field-Effect Transistors ). The goal is to deliver a sensitive, flexible, and lightweight transistor architecture that will improve sensor technology and maneuverability. The reported high thermal conductivity of graphene provides potential for room-temperature thermal management without the need of thermal-electric and gas cooling systems that are standard in sensor platforms. Liquid metals provide a unique opportunity for conformal electrodes that maximize surface area contact, therefore, enable flexibility, lower contact resistance, and reduce damage to the graphene materials involved. Lastly, electrolytic gate dielectrics provide conformability and high capacitances needed for high on/off rations and electrostatic gating. Results demonstrated that with minimal fabrication steps the proposed flexible graphene transistor architecture demonstrated ambipolar current-voltage transfer characteristics that are comparable to the current state-of-the-art. An additional

  14. Various aspects of ionic machining applied to metallic systems in microwave dipolar transistors

    International Nuclear Information System (INIS)

    Pestie, J.P.; Dumontet, H.; Andrieu, J.P.

    1974-01-01

    The positive benefit of ion bombardment machining in fabricating bipolar microwave transistors is shown. Ion cleaning, especially for P type silicon with high boron concentration allows reproducible surface resistivities to be reached 10 -6 ohms/cm 2 ) and the spurious resistance of the basis to be minimized. Ionic etching of metallic layers allowed 1μm stepped geometric structures to be realized. The multilayer Ti-Pt-Au system was associated to the finest geometries through a finite number of operations [fr

  15. Bipolar Disorder and Alcoholism: Are They Related?

    Science.gov (United States)

    ... Are they related? Is there a connection between bipolar disorder and alcoholism? Answers from Daniel K. Hall-Flavin, M.D. Bipolar disorder and alcoholism often occur together. Although the association ...

  16. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  17. Photon-gated spin transistor

    OpenAIRE

    Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

    2017-01-01

    Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

  18. Programmable, automated transistor test system

    Science.gov (United States)

    Truong, L. V.; Sundburg, G. R.

    1986-01-01

    A programmable, automated transistor test system was built to supply experimental data on new and advanced power semiconductors. The data will be used for analytical models and by engineers in designing space and aircraft electric power systems. A pulsed power technique was used at low duty cycles in a nondestructive test to examine the dynamic switching characteristic curves of power transistors in the 500 to 1000 V, 10 to 100 A range. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software.

  19. Josephson junctions array resonators

    Energy Technology Data Exchange (ETDEWEB)

    Gargiulo, Oscar; Muppalla, Phani; Mirzaei, Iman; Kirchmair, Gerhard [Institute for Quantum Optics and Quantum Information, Innsbruck (Austria)

    2016-07-01

    We present an experimental analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. The chain consists of 1600 individual junctions and we can measure quality factors in excess of 10000. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power we are able to measure this frequency shift on a single mode (self-kerr). By changing the input power on another mode while measuring the same one, we are able to evaluate the cross-kerr effect. We can measure the cross-Kerr effect by probing the resonance frequency of one mode while exciting another mode of the array with a microwave drive.

  20. Curved Josephson junction

    International Nuclear Information System (INIS)

    Dobrowolski, Tomasz

    2012-01-01

    The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

  1. The fitting parameters extraction of conversion model of the low dose rate effect in bipolar devices

    International Nuclear Information System (INIS)

    Bakerenkov, Alexander

    2011-01-01

    The Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar devices consists of in base current degradation of NPN and PNP transistors increase as the dose rate is decreased. As a result of almost 20-year studying, the some physical models of effect are developed, being described in detail. Accelerated test methods, based on these models use in standards. The conversion model of the effect, that allows to describe the inverse S-shaped excess base current dependence versus dose rate, was proposed. This paper presents the problem of conversion model fitting parameters extraction.

  2. Bipolar outflow in B335

    International Nuclear Information System (INIS)

    Hirano, N.; Kameya, O.; Nakayama, M.; Takakubo, K.

    1988-01-01

    The high-velocity (C-12)O (J = 1-0) emission in B335 with a high angular resolution of 16 arcsec has been mapped. The high-velocity emission shows distinct bipolar pattern centered at IRAS 19345+0727, toward which a strong high-velocity (C-12)O emission has been detected. The bipolar lobes delineate remarkable collimation toward the IRAS source, indicating that the flow is focused within 0.02 pc of the driving source. Each lobe is accompanied by significant wing emission with the opposite velocity shift, which clearly shows the association with IRAS 19345+0727. This feature is well explained as a bipolar flow the axis of which is nearly perpendicular to the line of sight. There is no evidence of another evolved bipolar flow which does not associate with any dense core as previously suggested. This suggests that B335 is a site of very recent star formation, containing a single bipolar flow with an age of about 30,000 yr. 15 references

  3. Exercising control over bipolar disorder.

    Science.gov (United States)

    Malhi, Gin S; Byrow, Yulisha

    2016-11-01

    Following extensive research exercise has emerged as an effective treatment for major depressive disorder, and it is now a recognised therapy alongside other interventions. In contrast, there is a paucity of research examining the therapeutic effects of exercise for those with bipolar disorder. Given that dysfunctional reward processing is central to bipolar disorder, research suggests that exercise can perhaps be framed as a reward-related event that may have the potential to precipitate a manic episode. The behavioural activation system (BAS) is a neurobehavioural system that is associated with responding to reward and provides an appropriate framework to theoretically examine and better understand the effects of exercise treatment on bipolar disorder. This article discusses recent research findings and provides an overview of the extant literature related to the neurobiological underpinnings of BAS and exercise as they relate to bipolar disorder. This is important clinically because depending on mood state in bipolar disorder, we postulate that exercise could be either beneficial or deleterious with positive or negative effects on the illness. Clearly, this complicates the evaluation of exercise as a potential treatment in terms of identifying its optimal characteristics in this population. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/.

  4. Late Onset Bipolar Disorder: Case Report

    OpenAIRE

    Filipa Araújo; Adriana Horta

    2016-01-01

    Background: Bipolar disorder affects approximately 1% of the population, with diagnosis often being made during late adolescence and early adulthood, and only rarely (0.1%) in the elderly. Late onset bipolar disorder in the elderly has a impact on the nature and course of bipolar disorder. Aims: The authors report a case of bipolar disorder emerging in late life  (76years old) with no cleary identified organic cause. Conclusion: This case highlights the importance of a broad different...

  5. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  6. Imunologia do transtorno bipolar Immunology of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Izabela Guimarães Barbosa

    2009-01-01

    Full Text Available OBJETIVO: Pesquisas recentes têm implicado fatores imunes na patogênese de diversos transtornos neuropsiquiátricos. O objetivo do presente trabalho é revisar os trabalhos que investigaram a associação entre transtorno bipolar e alterações em parâmetros imunes. MÉTODOS: Artigos que incluíam as palavras-chave: "bipolar disorder", "mania", "immunology", "cytokines", "chemokines", "interleukins", "interferon" e "tumor necrosis factor" foram selecionados em uma revisão sistemática da literatura. As bases de dados avaliadas foram MedLine e Scopus, entre os anos de 1980 e 2008. RESULTADOS: Foram identificados 28 trabalhos que estudaram alterações imunes em pacientes com transtorno bipolar. Seis artigos investigaram genes relacionados à resposta imune; cinco, autoanticorpos; quatro, populações leucocitárias; 13, citocinas e/ou moléculas relacionadas à resposta imune e seis, leucócitos de pacientes in vitro. CONCLUSÕES: Embora haja evidências na literatura correlacionando o transtorno bipolar a alterações imunes, os dados não são conclusivos. O transtorno bipolar parece estar associado a níveis mais elevados de autoanticorpos circulantes, assim como à tendência à ativação imune com produção de citocinas pró-inflamatórias e redução de parâmetros anti-inflamatórios.OBJECTIVE: Emerging research has implicated immune factors in the pathogenesis of a variety of neuropsychiatric disorders. The objective of the present paper is to review the studies that investigated the association between bipolar disorder and immune parameters. METHODS: Papers that included the keywords "bipolar to disorder", "mania", "immunology", "cytokines", "chemokines", "interleukins", "interferon" and "tumor necrosis factor" were selected in a systematic review of the literature. The evaluated databases were MedLine and Scopus in the period between 1980 and 2008. RESULTS: Twenty eight works were found. Six studies investigated immune response

  7. On theory of single-molecule transistor

    International Nuclear Information System (INIS)

    Tran Tien Phuc

    2009-01-01

    The results of the study on single-molecule transistor are mainly investigated in this paper. The structure of constructed single-molecule transistor is similar to a conventional MOSFET. The conductive channel of the transistors is a single-molecule of halogenated benzene derivatives. The chemical simulation software CAChe was used to design and implement for the essential parameter of the molecules utilized as the conductive channel. The GUI of Matlab has been built to design its graphical interface, calculate and plot the output I-V characteristic curves for the transistor. The influence of temperature, length and width of the conductive channel, and gate voltage is considered. As a result, the simulated curves are similar to the traditional MOSFET's. The operating temperature range of the transistors is wider compared with silicon semiconductors. The supply voltage for transistors is only about 1 V. The size of transistors in this research is several nanometers.

  8. Analysing organic transistors based on interface approximation

    International Nuclear Information System (INIS)

    Akiyama, Yuto; Mori, Takehiko

    2014-01-01

    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

  9. Mathematical models of bipolar disorder

    Science.gov (United States)

    Daugherty, Darryl; Roque-Urrea, Tairi; Urrea-Roque, John; Troyer, Jessica; Wirkus, Stephen; Porter, Mason A.

    2009-07-01

    We use limit cycle oscillators to model bipolar II disorder, which is characterized by alternating hypomanic and depressive episodes and afflicts about 1% of the United States adult population. We consider two non-linear oscillator models of a single bipolar patient. In both frameworks, we begin with an untreated individual and examine the mathematical effects and resulting biological consequences of treatment. We also briefly consider the dynamics of interacting bipolar II individuals using weakly-coupled, weakly-damped harmonic oscillators. We discuss how the proposed models can be used as a framework for refined models that incorporate additional biological data. We conclude with a discussion of possible generalizations of our work, as there are several biologically-motivated extensions that can be readily incorporated into the series of models presented here.

  10. Is bipolar always bipolar? Understanding the controversy on bipolar disorder in children

    Science.gov (United States)

    Grimmer, Yvonne; Hohmann, Sarah

    2014-01-01

    Dramatically increasing prevalence rates of bipolar disorder in children and adolescents in the United States have provoked controversy regarding the boundaries of manic symptoms in child and adolescent psychiatry. The serious impact of this ongoing debate on the treatment of affected children is reflected in the concomitant increase in prescription rates for antipsychotic medication. A key question in the debate is whether this increase in bipolar disorder in children and adolescents is based on a better detection of early-onset bipolar disorder—which can present differently in children and adolescents—or whether it is caused by an incorrect assignment of symptoms which overlap with other widely known disorders. So far, most findings suggest that the suspected symptoms, in particular chronic, non-episodic irritability (a mood symptom presenting with easy annoyance, temper tantrums and anger) do not constitute a developmental presentation of childhood bipolar disorder. Additional research based on prospective, longitudinal studies is needed to further clarify the developmental trajectories of bipolar disorder and the diagnostic status of chronic, non-episodic irritability. PMID:25580265

  11. Bipolar dislocation of the clavicle

    Directory of Open Access Journals (Sweden)

    Wei Jiang

    2012-01-01

    Full Text Available Bipolar dislocation of the clavicle at acromioclavicular and sternoclavicular joint is an uncommon traumatic injury. The conservative treatments adopted in the past is associated with redislocation dysfunction and deformity. A 41 years old lady with bipolar dislocation of right shoulder is treated surgically by open reduction and internal fixation by oblique T-plate at sternoclavicular joint and Kirschner wire stabilization at acromioclavicular joint. The patient showed satisfactory recovery with full range of motion of the right shoulder and normal muscular strength. The case reported in view of rarity and at 2 years followup.

  12. Transcultural aspects of bipolar disorder

    OpenAIRE

    Sanches, Marsal; Jorge, Miguel Roberto

    2004-01-01

    Considerando-se que existem diferenças importantes na maneira como as emoções são vivenciadas e expressas em diferentes culturas, a apresentação e o manejo do transtorno afetivo bipolar sofrem influência de fatores culturais. O presente artigo realiza uma breve revisão da evidência referente aos aspectos transculturais do transtorno bipolar.Cultural variations in the expression of emotions have been described. Consequently, there are cross-cultural influences on the diagnosis and management o...

  13. stability analysis of a three-phase solid-state var compensator

    African Journals Online (AJOL)

    2012-11-03

    Nov 3, 2012 ... solid-state devices (bipolar junction transistor (BJT), insulated-gate bipolar transistor (IGBT), gate-turn- off thyristor (GTO) and power MOSFET has elim- inated these problems. The voltage source inverter. (VSI) employing any one of these devices is an efficient equipment for reactive power compensation or ...

  14. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  15. Electronic monitoring in bipolar disorder.

    Science.gov (United States)

    Faurholt-Jepsen, Maria

    2018-03-01

    Major reasons for the insufficient effects of current treatment options in bipolar disorder include delayed intervention for prodromal depressive and manic symptoms and decreased adherence to psychopharmacological treatment. The reliance on subjective information and clinical evaluations when diagnosing and assessing the severity of depressive and manic symptoms calls for less biased and more objective markers. By using electronic devices, fine-grained data on complex psychopathological aspects of bipolar disorder can be evaluated unobtrusively over the long term. Moreover, electronic data could possibly represent candidate markers of diagnosis and illness activity in bipolar disorder and allow for early and individualized intervention for prodromal symptoms outside clinical settings. 
The present dissertation concerns the use of electronic monitoring as a marker and treatment intervention in bipolar disorder and investigated the scientific literature and body of evidence within the area, which includes ten original study reports and two systematic reviews, one of which included a meta-analysis, conducted by the author of the dissertation. 
Taken together, the literature presented in this dissertation illustrates that 1) smartphone-based electronic self-monitoring of mood seems to reflect clinically assessed depressive and manic symptoms and enables the long-term characterization of mood

instability in bipolar disorder; 2) preliminary results suggest that smartphone-based automatically generated data (e.g. the number of text messages sent/day; the number of incoming and outgoing calls/day; the number of changes in cell tower IDs/day; and voice features) seem to reflect clinically assessed depressive and manic symptoms in bipolar disorder; 3) smartphone-based electronic self-monitoring had no effects on the severity of depressive and manic symptoms in bipolar disorder, according to a randomized controlled trial; and 4) electronic monitoring of psychomotor

  16. The human myotendinous junction

    DEFF Research Database (Denmark)

    Knudsen, A B; Larsen, M; Mackey, Abigail

    2015-01-01

    The myotendinous junction (MTJ) is a specialized structure in the musculotendinous system, where force is transmitted from muscle to tendon. Animal models have shown that the MTJ takes form of tendon finger-like processes merging with muscle tissue. The human MTJ is largely unknown and has never...... been described in three dimensions (3D). The aim of this study was to describe the ultrastructure of the human MTJ and render 3D reconstructions. Fourteen subjects (age 25 ± 3 years) with isolated injury of the anterior cruciate ligament (ACL), scheduled for reconstruction with a semitendinosus...

  17. Tight junctions and human diseases.

    Science.gov (United States)

    Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

    2003-09-01

    Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

  18. Gap junctions and motor behavior

    DEFF Research Database (Denmark)

    Kiehn, Ole; Tresch, Matthew C.

    2002-01-01

    The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

  19. Tuning electron transport through a single molecular junction by bridge modification

    International Nuclear Information System (INIS)

    Li, Xiao-Fei; Qiu, Qi; Luo, Yi

    2014-01-01

    The possibility of controlling electron transport in a single molecular junction represents the ultimate goal of molecular electronics. Here, we report that the modification of bridging group makes it possible to improve the performance and obtain new functions in a single cross-conjugated molecular junction, designed from a recently synthesized bipolar molecule bithiophene naphthalene diimide. Our first principles results show that the bipolar characteristic remains after the molecule was modified and sandwiched between two metal electrodes. Rectifying is the intrinsic characteristic of the molecular junction and its performance can be enhanced by replacing the saturated bridging group with an unsaturated group. A further improvement of the rectifying and a robust negative differential resistance (NDR) behavior can be achieved by the modification of unsaturated bridge. It is revealed that the modification can induce a deviation angle about 4° between the donor and the acceptor π-conjugations, making it possible to enhance the communication between the two π systems. Meanwhile, the low energy frontier orbitals of the junction can move close to the Fermi level and encounter in energy at certain biases, thus a transport channel with a considerable transmission can be formed near the Fermi level only at a narrow bias regime, resulting in the improvement of rectifying and the robust NDR behavior. This finding could be useful for the design of single molecular devices.

  20. Conduction gap in graphene strain junctions: direction dependence

    International Nuclear Information System (INIS)

    Nguyen, M Chung; Nguyen, V Hung; Dollfus, P; Nguyen, Huy-Viet

    2014-01-01

    It has been shown in a recent study (Nguyen et al 2014 Nanotechnology 25 165201) that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors which is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundred meV in strained junctions with a strain of only a few per cent. However, since it depends essentially on the magnitude of the Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction-gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene-strained junctions in electronic applications and strain sensors. (paper)

  1. Magnetometry with Low-Resistance Proximity Josephson Junction

    Science.gov (United States)

    Jabdaraghi, R. N.; Peltonen, J. T.; Golubev, D. S.; Pekola, J. P.

    2018-06-01

    We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb-Cu-Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb-Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55 nA/Φ_0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al-Cu-Al SNS junction and an Al tunnel probe (Al-SQUIPT).

  2. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  3. Social support and bipolar disorder

    Directory of Open Access Journals (Sweden)

    Paula Mendonça Studart

    2015-08-01

    Full Text Available Background Bipolar disorder is a chronic condition that affects the functioning of its carriers in many different ways, even when treated properly. Therefore, it’s also important to identify the psychosocial aspects that could contribute to an improvement of this population’s quality of life.Objective Carry out a literature review on the role of social support in cases of bipolar disorder.Method A research on the following online databases PubMed, Lilacs and SciELO was conducted by using the keywords “social support” or “social networks” and “mood disorders” or “bipolar disorder” or “affective disorder,” with no defined timeline.Results Only 13 studies concerning the topic of social support and BD were found in the search for related articles. Generally speaking, the results show low rates of social support for BD patients.Discussion Despite the growing interest in the overall functioning of patients with bipolar disorder, studies on social support are still rare. Besides, the existing studies on the subject use different methodologies, making it difficult to establish data comparisons.

  4. Electronic monitoring in bipolar disorder

    DEFF Research Database (Denmark)

    Faurholt-Jepsen, Maria

    2018-01-01

    generated data (e.g. the number of text messages sent/day; the number of incoming and outgoing calls/day; the number of changes in cell tower IDs/day; and voice features) seem to reflect clinically assessed depressive and manic symptoms in bipolar disorder; 3) smartphone-based electronic self-monitoring had...

  5. Integrated Neurobiology of Bipolar Disorder

    Science.gov (United States)

    Maletic, Vladimir; Raison, Charles

    2014-01-01

    From a neurobiological perspective there is no such thing as bipolar disorder. Rather, it is almost certainly the case that many somewhat similar, but subtly different, pathological conditions produce a disease state that we currently diagnose as bipolarity. This heterogeneity – reflected in the lack of synergy between our current diagnostic schema and our rapidly advancing scientific understanding of the condition – limits attempts to articulate an integrated perspective on bipolar disorder. However, despite these challenges, scientific findings in recent years are beginning to offer a provisional “unified field theory” of the disease. This theory sees bipolar disorder as a suite of related neurodevelopmental conditions with interconnected functional abnormalities that often appear early in life and worsen over time. In addition to accelerated loss of volume in brain areas known to be essential for mood regulation and cognitive function, consistent findings have emerged at a cellular level, providing evidence that bipolar disorder is reliably associated with dysregulation of glial–neuronal interactions. Among these glial elements are microglia – the brain’s primary immune elements, which appear to be overactive in the context of bipolarity. Multiple studies now indicate that inflammation is also increased in the periphery of the body in both the depressive and manic phases of the illness, with at least some return to normality in the euthymic state. These findings are consistent with changes in the hypothalamic–pituitary–adrenal axis, which are known to drive inflammatory activation. In summary, the very fact that no single gene, pathway, or brain abnormality is likely to ever account for the condition is itself an extremely important first step in better articulating an integrated perspective on both its ontological status and pathogenesis. Whether this perspective will translate into the discovery of innumerable more homogeneous forms of

  6. Effects of inorganic substances on water splitting in ion-exchange membranes; II. Optimal contents of inorganic substances in preparing bipolar membranes.

    Science.gov (United States)

    Kang, Moon-Sung; Choi, Yong-Jin; Moon, Seung-Hyeon

    2004-05-15

    An approach to enhancing the water-splitting performance of bipolar membranes (BPMs) is introducing an inorganic substance at the bipolar (BP) junction. In this study, the immobilization of inorganic matters (i.e., iron hydroxides and silicon compounds) at the BP junction and the optimum concentration have been investigated. To immobilize these inorganic matters, novel methods (i.e., electrodeposition of the iron hydroxide and processing of the sol-gel to introduce silicon groups at the BP junction) were suggested. At optimal concentrations, the immobilized inorganic matters significantly enhanced the water-splitting fluxes, indicating that they provide alternative paths for water dissociation, but on the other hand possibly reduce the polarization of water molecules between the sulfonic acid and quaternary ammonium groups at high contents. Consequently, the amount of inorganic substances introduced should be optimized to obtain the maximum water splitting in the BPM.

  7. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    International Nuclear Information System (INIS)

    Che, Yongli; Zhang, Yating; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan; Cao, Xiaolong; Dai, Haitao; Yang, Junbo

    2016-01-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV th  ∼ 15 V) and a long retention time (>10 5  s). The magnitude of ΔV th depended on both P/E voltages and the bias voltage (V DS ): ΔV th was a cubic function to V P/E and linearly depended on V DS . Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  8. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    Energy Technology Data Exchange (ETDEWEB)

    Che, Yongli; Zhang, Yating, E-mail: yating@tju.edu.cn; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); Cao, Xiaolong [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Dai, Haitao [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Yang, Junbo [Center of Material Science, National University of Defense Technology, Changsha 410073 (China)

    2016-07-04

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th} was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  9. Power transistor module for high current applications

    International Nuclear Information System (INIS)

    Cilyo, F.F.

    1975-01-01

    One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

  10. Effect of quantum well position on the distortion characteristics of transistor laser

    Science.gov (United States)

    Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.

    2018-05-01

    The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.

  11. Photojunction Field-Effect Transistor Based on a Colloidal Quantum Dot Absorber Channel Layer

    KAUST Repository

    Adinolfi, Valerio

    2015-01-27

    © 2015 American Chemical Society. The performance of photodetectors is judged via high responsivity, fast speed of response, and low background current. Many previously reported photodetectors based on size-tuned colloidal quantum dots (CQDs) have relied either on photodiodes, which, since they are primary photocarrier devices, lack gain; or photoconductors, which provide gain but at the expense of slow response (due to delayed charge carrier escape from sensitizing centers) and an inherent dark current vs responsivity trade-off. Here we report a photojunction field-effect transistor (photoJFET), which provides gain while breaking prior photoconductors\\' response/speed/dark current trade-off. This is achieved by ensuring that, in the dark, the channel is fully depleted due to a rectifying junction between a deep-work-function transparent conductive top contact (MoO3) and a moderately n-type CQD film (iodine treated PbS CQDs). We characterize the rectifying behavior of the junction and the linearity of the channel characteristics under illumination, and we observe a 10 μs rise time, a record for a gain-providing, low-dark-current CQD photodetector. We prove, using an analytical model validated using experimental measurements, that for a given response time the device provides a two-orders-of-magnitude improvement in photocurrent-to-dark-current ratio compared to photoconductors. The photoJFET, which relies on a junction gate-effect, enriches the growing family of CQD photosensitive transistors.

  12. Kinetics and tissue repair process following fractional bipolar radiofrequency treatment.

    Science.gov (United States)

    Kokolakis, G; von Eichel, L; Ulrich, M; Lademann, J; Zuberbier, T; Hofmann, M A

    2018-05-15

    Fractionated radiofrequency (RF) tissue tightening is an alternative method to fractionated laser treatment of skin wrinkling, laxity and acne scars, with reduced risk of scarring or persistent pigmentation. The aim of this study was to evaluate and quantify the wound healing process after RF treatment. 12 patients were treated with a 64-pin fractional bipolar RF device with 60 mJ/pin applied energy. Confocal laser scanning microscopy (CLSM) examination was performed on day 1, day 2, day 7 and day 14 after treatment. Clinical wound healing process was measured and expressed as a percentage. All patients developed erythema, mild edema and crusts at the treated areas. Two weeks after treatment clinical symptoms resolved. During ablation patients reported moderate pain. Directly after ablation microscopic ablation zones could be detected in CLSM. Measurement of MAZ at epidermis, dermo-epidermal junction and papilary dermis showed a constant diameter until two weeks after treatment. Re-epithelization of the MAZ could be detected already 1 week after treatment. However, 2 weeks after ablation the honeycomb pattern of the epidermis was not yet completely restored. Bipolar fractionated RF treatment demonstrates clinically a rapid wound healing response. The subepidermal remodelling process still ongoing after 14 days, showing new granulation tissue. Therefore, treatment intervals of at least 14 days should be recommended to allow completion of the remodelling process.

  13. Junction detection and pathway selection

    Science.gov (United States)

    Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

    1992-02-01

    The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

  14. Mixing in T-junctions

    NARCIS (Netherlands)

    Kok, Jacobus B.W.; van der Wal, S.

    1996-01-01

    The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

  15. Dynamics of Josephson junction arrays

    International Nuclear Information System (INIS)

    Hadley, P.

    1989-01-01

    The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

  16. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Reber, R.A. Jr.; Winokur, P.S.; Kosier, S.L.; Schrimpf, R.D.; Wei, A.; DeLaus, M.; Combs, W.E.; Pease, R.L.

    1994-01-01

    The authors have performed capacitance-voltage (C-V) and thermally-stimulated-current (TSC) measurements on non-radiation-hard MOS capacitors simulating screen oxides of modern bipolar technologies. For 0-V irradiation of ∼25 C, the net trapped-positive-charge density (N ox ) inferred from midgap C-V shifts is ∼25--40% greater for low-dose-rate ( 2 )/s) than for high-dose-rate (> 100 rad(SiO 2 )/s) exposure. Device modeling shows that such a difference in screen-oxide N ox is enough to account for the enhanced low-rate gain degradation often observed in bipolar devices, due to the ∼ exp(N ox 2 ) dependence of the excess base current. At the higher rates, TSC measurements reveal a ∼10% decrease in trapped-hole density over low rates. Also, at high rates, up to ∼2.5-times as many trapped holes are compensated by electrons in border traps than at low rates for these devices and irradiation conditions. Both the reduction in trapped-hole density and increased charge compensation reduce the high-rate midgap shift. A physical model is developed which suggests that both effects are caused by time-dependent space charge in the bulk of these soft oxides associated with slowly transporting and/or metastably trapped holes (e.g., in Eδ' centers). On the basis of this model, bipolar transistors and screen-oxide capacitors were irradiated at 60 C at 200 rad(SiO 2 )/s in a successful effort to match low-rate damage. these surprising results provide insight into enhanced low-rate bipolar gain degradation and suggest potentially promising new approaches to bipolar and BiCMOS hardness assurance for space applications

  17. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

    Science.gov (United States)

    Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

    2018-04-01

    Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

  18. Prolonged 500 C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

    Science.gov (United States)

    Spry, David J.; Neudeck, Philip G.; Lukco, Dorothy; Chen, Liangyu; Krasowski, Michael J.; Prokop, Norman F.; Chang, Carl W.; Beheim, Glenn M.

    2017-01-01

    This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 C. After 100 hours of 500 C burn-in, the circuits (except for 2 failures) exhibit less than 10 change in output characteristics for the remainder of 500C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460C in comparison to what is observed for Earth-atmosphere oven testing at 500 C.

  19. A miniature microcontroller curve tracing circuit for space flight testing transistors.

    Science.gov (United States)

    Prokop, N; Greer, L; Krasowski, M; Flatico, J; Spina, D

    2015-02-01

    This paper describes a novel miniature microcontroller based curve tracing circuit, which was designed to monitor the environmental effects on Silicon Carbide Junction Field Effect Transistor (SiC JFET) device performance, while exposed to the low earth orbit environment onboard the International Space Station (ISS) as a resident experiment on the 7th Materials on the International Space Station Experiment (MISSE7). Specifically, the microcontroller circuit was designed to operate autonomously and was flown on the external structure of the ISS for over a year. This curve tracing circuit is capable of measuring current vs. voltage (I-V) characteristics of transistors and diodes. The circuit is current limited for low current devices and is specifically designed to test high temperature, high drain-to-source resistance SiC JFETs. The results of each I-V data set are transmitted serially to an external telemetered communication interface. This paper discusses the circuit architecture, its design, and presents example results.

  20. Bipolar polygenic loading and bipolar spectrum features in major depressive disorder

    NARCIS (Netherlands)

    Wiste, Anna; Robinson, Elise B.; Milaneschi, Yuri; Meier, Sandra; Ripke, Stephan; Clements, Caitlin C.; Fitzmaurice, Garrett M.; Rietschel, Marcella; Penninx, Brenda W.; Smoller, Jordan W.; Perlis, Roy H.

    Objectives Family and genetic studies indicate overlapping liability for major depressive disorder and bipolar disorder. The purpose of the present study was to determine whether this shared genetic liability influences clinical presentation. Methods A polygenic risk score for bipolar disorder,

  1. I–V, C–V and deep level transient spectroscopy study of 24 MeV ...

    Indian Academy of Sciences (India)

    This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. –, – and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are ...

  2. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  3. Memristive device based on a depletion-type SONOS field effect transistor

    Science.gov (United States)

    Himmel, N.; Ziegler, M.; Mähne, H.; Thiem, S.; Winterfeld, H.; Kohlstedt, H.

    2017-06-01

    State-of-the-art SONOS (silicon-oxide-nitride-oxide-polysilicon) field effect transistors were operated in a memristive switching mode. The circuit design is a variation of the MemFlash concept and the particular properties of depletion type SONOS-transistors were taken into account. The transistor was externally wired with a resistively shunted pn-diode. Experimental current-voltage curves show analog bipolar switching characteristics within a bias voltage range of ±10 V, exhibiting a pronounced asymmetric hysteresis loop. The experimental data are confirmed by SPICE simulations. The underlying memristive mechanism is purely electronic, which eliminates an initial forming step of the as-fabricated cells. This fact, together with reasonable design flexibility, in particular to adjust the maximum R ON/R OFF ratio, makes these cells attractive for neuromorphic applications. The relative large set and reset voltage around ±10 V might be decreased by using thinner gate-oxides. The all-electric operation principle, in combination with an established silicon manufacturing process of SONOS devices at the Semiconductor Foundry X-FAB, promise reliable operation, low parameter spread and high integration density.

  4. Unsplit bipolar pulse forming line

    Science.gov (United States)

    Rhodes, Mark A [Pleasanton, CA

    2011-05-24

    A bipolar pulse forming transmission line module and system for linear induction accelerators having first, second, third, and fourth planar conductors which form a sequentially arranged interleaved stack having opposing first and second ends, with dielectric layers between the conductors. The first and second planar conductors are connected to each other at the first end, and the first and fourth planar conductors are connected to each other at the second end via a shorting plate. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short at the first end a high voltage from the third planar conductor to the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

  5. Course of Subthreshold Bipolar Disorder in Youth: Diagnostic Progression from Bipolar Disorder Not Otherwise Specified

    Science.gov (United States)

    Axelson, David A.; Birmaher, Boris; Strober, Michael A.; Goldstein, Benjamin I.; Ha, Wonho; Gill, Mary Kay; Goldstein, Tina R.; Yen, Shirley; Hower, Heather; Hunt, Jeffrey I.; Liao, Fangzi; Iyengar, Satish; Dickstein, Daniel; Kim, Eunice; Ryan, Neal D.; Frankel, Erica; Keller, Martin B.

    2011-01-01

    Objective: To determine the rate of diagnostic conversion from an operationalized diagnosis of bipolar disorder not otherwise specified (BP-NOS) to bipolar I disorder (BP-I) or bipolar II disorder (BP-II) in youth over prospective follow-up and to identify factors associated with conversion. Method: Subjects were 140 children and adolescents…

  6. Parity effect of bipolar quantum Hall edge transport around graphene antidots.

    Science.gov (United States)

    Matsuo, Sadashige; Nakaharai, Shu; Komatsu, Katsuyoshi; Tsukagoshi, Kazuhito; Moriyama, Takahiro; Ono, Teruo; Kobayashi, Kensuke

    2015-06-30

    Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.

  7. Bipolar (spectrum) disorder and mood stabilization: standing at the crossroads?

    OpenAIRE

    De Fruyt, Jurgen; Demyttenaere, Koen

    2007-01-01

    Diagnosis and treatment of bipolar disorder has long been a neglected discipline. Recent years have shown an upsurge in bipolar research. When compared to major depressive disorder, bipolar research still remains limited and more expert based than evidence based. In bipolar diagnosis the focus is shifting from classic mania to bipolar depression and hypomania. There is a search for bipolar signatures in symptoms and course of major depressive episodes. The criteria for hypomania are softened,...

  8. [Bipolar disorders in DSM-5].

    Science.gov (United States)

    Severus, E; Bauer, M

    2014-05-01

    In spring 2013 the fifth edition of the Diagnostic and Statistical Manual of Mental Disorders (DSM-5) edited by the American Psychiatric Association was published. The DSM-5 has also brought some important changes regarding bipolar disorders. The goal of this manuscript is to review the novelties in DSM-5 and to evaluate the implications of these changes. The diagnostic criteria as well as the additional remarks provided in the running text of DSM-5 were carefully appraised. For the first time diagnostic criteria are provided for disorders which up to now have been considered as subthreshold bipolar disorders. Furthermore, mixed episodes were eliminated and instead a mixed specifier was introduced. An increase in goal-directed activity/energy is now one of the obligatory symptoms for a (hypo)manic episode. Diagnostic guidance is provided as to when a (hypo)manic episode that has developed during treatment with an antidepressant has to be judged to be causally related to antidepressants and when this episode has only occurred coincidentally with antidepressant use. While some of the novelties are clearly useful, e.g. addition of increased goal-directed activity/energy as obligatory symptom for (hypo)manic episodes, this remains to be demonstrated for others, such as the definition of various subthreshold bipolar disorders.

  9. Virginia Woolf, neuroprogression, and bipolar disorder

    Directory of Open Access Journals (Sweden)

    Manuela V. Boeira

    2016-01-01

    Full Text Available Family history and traumatic experiences are factors linked to bipolar disorder. It is known that the lifetime risk of bipolar disorder in relatives of a bipolar proband are 5-10% for first degree relatives and 40-70% for monozygotic co-twins. It is also known that patients with early childhood trauma present earlier onset of bipolar disorder, increased number of manic episodes, and more suicide attempts. We have recently reported that childhood trauma partly mediates the effect of family history on bipolar disorder diagnosis. In light of these findings from the scientific literature, we reviewed the work of British writer Virginia Woolf, who allegedly suffered from bipolar disorder. Her disorder was strongly related to her family background. Moreover, Virginia Woolf was sexually molested by her half siblings for nine years. Her bipolar disorder symptoms presented a pernicious course, associated with hospitalizations, suicidal behavioral, and functional impairment. The concept of neuroprogression has been used to explain the clinical deterioration that takes places in a subgroup of bipolar disorder patients. The examination of Virgina Woolf’s biography and art can provide clinicians with important insights about the course of bipolar disorder.

  10. Bipolar Disorder and Obsessive Compulsive Disorder Comorbidity

    Directory of Open Access Journals (Sweden)

    Necla Keskin

    2014-08-01

    Full Text Available The comorbidity of bipolar disorder and anxiety disorders is a well known concept. Obsessive-compulsive disorder is the most commonly seen comorbid anxiety disorder in bipolar patients. Some genetic variants, neurotransmitters especially serotonergic systems and second-messenger systems are thought to be responsible for its etiology. Bipolar disorder alters the clinical aspects of obsessive compulsive disorder and is associated with poorer outcome. The determination of comorbidity between bipolar disorder and obsessive compulsive disorder is quite important for appropriate clinical management and treatment. [Psikiyatride Guncel Yaklasimlar - Current Approaches in Psychiatry 2014; 6(4.000: 429-437

  11. [Lithium and anticonvulsants in bipolar depression].

    Science.gov (United States)

    Samalin, L; Nourry, A; Llorca, P-M

    2011-12-01

    For decades, lithium and anticonvulsants have been widely used in the treatment of bipolar disorder. Their efficacy in the treatment of mania is recognized. These drugs have been initially evaluated in old and methodologically heterogeneous studies. Their efficacy in bipolar depression has not always been confirmed in more recent and methodologically more reliable studies. Thus, lithium's efficacy as monotherapy was challenged by the study of Young (2008) that showed a lack of efficacy compared with placebo in the treatment of bipolar depression. In two recent meta-analyses, valproate has shown a modest efficacy in the treatment of bipolar depression. As for lithium, valproate appeared to have a larger antimanic effect for acute phase and prophylaxis of bipolar disorder. In contrast, lamotrigine is more effective on the depressive pole of bipolar disorder with better evidence for the prevention of depressive recurrences. The guidelines include these recent studies and recommend lamotrigine as a first-line treatment of bipolar depression and for maintenance treatment. Because of more discordant data concerning lithium and valproate, these two drugs are placed either as first or as second line treatment of bipolar depression. The different safety/efficacy ratios of mood stabilizers underlie the complementarity and the importance of combination between them, or with some second-generation antipsychotics, in the treatment of patients with bipolar disorder. Copyright © 2011 L’Encéphale. Published by Elsevier Masson SAS.. All rights reserved.

  12. Late Onset Bipolar Disorder: Case Report

    Directory of Open Access Journals (Sweden)

    Filipa Araújo

    2016-07-01

    Full Text Available Background: Bipolar disorder affects approximately 1% of the population, with diagnosis often being made during late adolescence and early adulthood, and only rarely (0.1% in the elderly. Late onset bipolar disorder in the elderly has a impact on the nature and course of bipolar disorder. Aims: The authors report a case of bipolar disorder emerging in late life  (76years old with no cleary identified organic cause. Conclusion: This case highlights the importance of a broad differential diagnosis and pharmacologic management when approaching new-onset manic/depressive symptoms among geriatric patients.

  13. Dysfunctional gaze processing in bipolar disorder

    Directory of Open Access Journals (Sweden)

    Cristina Berchio

    2017-01-01

    The present study provides neurophysiological evidence for abnormal gaze processing in BP and suggests dysfunctional processing of direct eye contact as a prominent characteristic of bipolar disorder.

  14. Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

    KAUST Repository

    Park, Woojin

    2018-05-15

    We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

  15. AlGaN Channel Transistors for Power Management and Distribution

    Science.gov (United States)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  16. Quantitative analysis of Josephson-quasiparticle current in superconducting single-electron transistors

    International Nuclear Information System (INIS)

    Nakamura, Y.; Chen, C.D.; Tsai, J.S.

    1996-01-01

    We have investigated Josephson-quasiparticle (JQP) current in superconducting single-electron transistors in which charging energy E C was larger than superconducting gap energy Δ and junction resistances were much larger than R Q ≡h/4e 2 . We found that not only the shapes of the JQP peaks but also their absolute height were reproduced quantitatively with a theory by Averin and Aleshkin using a Josephson energy of Ambegaokar-Baratoff close-quote s value. copyright 1996 The American Physical Society

  17. Effect of proton and electron-irradiation intensity on radiation-induced damages in silicon bioolar transistors

    International Nuclear Information System (INIS)

    Bannikov, Yu.A.; Gorin, B.M.; Kozhevnikov, V.P.; Mikhnovich, V.V.; Gusev, L.I.

    1981-01-01

    The increase of radiation-induced damages of bipolar n-p-n transistors 8-12 times with the irradiation intensity decrease by protons from 4.07x1010 to 2.5x107 cm-2 x c-1 has been found experimentally. damages of p-n-p transistors vary in the opposite way - they are decreased 2-3 times with the irradiation intensity decrease within the same limits. the dependence of damages on intansity of proton irradiation occurs at the dose rate by three orders less than it has been observed for electron irradiation. the results obtained are explained by the dependence of radiation defectoformation reactions on charge state of defects with account for the role of formation of disordering regions upon proton irradiation [ru

  18. Improvements in or relating to transistor circuits

    International Nuclear Information System (INIS)

    Richards, R.F.; Williamson, P.W.

    1978-01-01

    This invention relates to transistor circuits and in particular to integrated transistor circuits formed on a substrate of semi-conductor material such as silicon. The invention is concerned with providing integrated circuits in which malfunctions caused by the effects of ionising, e.g. nuclear, radiations are reduced. (author)

  19. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  20. Efficient simulation of power MOS transistors

    NARCIS (Netherlands)

    Ugryumova, M.; Schilders, W.H.A.

    2011-01-01

    In this report we present a few industrial problems related to modeling of MOS transistors. We suggest an efficient algorithm for computing output current at the top ports of power MOS transistors for given voltage excitations. The suggested algorithm exploits the connection between the resistor and

  1. Enhanced low dose rate sensitivity (ELDRS) in a voltage comparator which only utilizes complementary vertical NPN and PNP transistors

    International Nuclear Information System (INIS)

    Krieg, J.F.; Titus, J.L.; Emily, D.; Gehlhausen, M.; Swonger, J.; Platteter, D.

    1999-01-01

    For the first time, enhanced low dose rate sensitivity (ELDRS) is reported in a vertical bipolar process. A radiation hardness assurance (RHA) test method was successfully demonstrated on a linear circuit, the HS139RH quad comparator, and its discrete transistor elements. This circuit only uses vertical NPN and PNP transistors. Radiation tests on the HS139RH were performed at 25 C using dose rates of 50 rd(Si)/s, 100 mrd(Si)/s and 10 mrd(Si)/s, and at 100 C using a dose rate of 10 rd(Si)/s. Tests at dose rates of 50 rd(Si)/s at 25 C and 10 rd(Si)/s at 100 C were performed on discrete vertical NPN and PNP transistor elements which comprise the HS139RH. Transistor and circuit responses were evaluated. The die's passivation overcoat layers were varied to examine the effect of removing a nitride layer and thinning a deposited SiO 2 (silox) layer

  2. Bipolar mixed features - Results from the comparative effectiveness for bipolar disorder (Bipolar CHOICE) study.

    Science.gov (United States)

    Tohen, Mauricio; Gold, Alexandra K; Sylvia, Louisa G; Montana, Rebecca E; McElroy, Susan L; Thase, Michael E; Rabideau, Dustin J; Nierenberg, Andrew A; Reilly-Harrington, Noreen A; Friedman, Edward S; Shelton, Richard C; Bowden, Charles L; Singh, Vivek; Deckersbach, Thilo; Ketter, Terence A; Calabrese, Joseph R; Bobo, William V; McInnis, Melvin G

    2017-08-01

    DSM-5 changed the criteria from DSM-IV for mixed features in mood disorder episodes to include non-overlapping symptoms of depression and hypomania/mania. It is unknown if, by changing these criteria, the same group would qualify for mixed features. We assessed how those meeting DSM-5 criteria for mixed features compare to those meeting DSM-IV criteria. We analyzed data from 482 adult bipolar patients in Bipolar CHOICE, a randomized comparative effectiveness trial. Bipolar diagnoses were confirmed through the MINI International Neuropsychiatric Interview (MINI). Presence and severity of mood symptoms were collected with the Bipolar Inventory of Symptoms Scale (BISS) and linked to DSM-5 and DSM-IV mixed features criteria. Baseline demographics and clinical variables were compared between mood episode groups using ANOVA for continuous variables and chi-square tests for categorical variables. At baseline, the frequency of DSM-IV mixed episodes diagnoses obtained with the MINI was 17% and with the BISS was 20%. Using DSM-5 criteria, 9% of participants met criteria for hypomania/mania with mixed features and 12% met criteria for a depressive episode with mixed features. Symptom severity was also associated with increased mixed features with a high rate of mixed features in patients with mania/hypomania (63.8%) relative to those with depression (8.0%). Data on mixed features were collected at baseline only and thus do not reflect potential patterns in mixed features within this sample across the study duration. The DSM-5 narrower, non-overlapping definition of mixed episodes resulted in fewer patients who met mixed criteria compared to DSM-IV. Copyright © 2017. Published by Elsevier B.V.

  3. High-Performance Vertical Organic Electrochemical Transistors.

    Science.gov (United States)

    Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

    2018-02-01

    Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Universal power transistor base drive control unit

    Science.gov (United States)

    Gale, Allan R.; Gritter, David J.

    1988-01-01

    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  5. 10 K gate I(2)L and 1 K component analog compatible bipolar VLSI technology - HIT-2

    Science.gov (United States)

    Washio, K.; Watanabe, T.; Okabe, T.; Horie, N.

    1985-02-01

    An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10 K I(2)L gates with 1 K analog devices is proposed. The new technology, called high-density integration technology-2, is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I(2)L active layer etching, and I(2)L current gain increase. I(2)L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BV(CE0) of more than 10 V and an f(T) of 5 GHz, and lateral p-n-p transistors having an f(T) of 150 MHz.

  6. Instabilities in thin tunnel junctions

    International Nuclear Information System (INIS)

    Konkin, M.K.; Adler, J.G.

    1978-01-01

    Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0-500-meV range. This paper relates the bias at which the instability occurs to the barrier thickness

  7. The Control of Junction Flows

    National Research Council Canada - National Science Library

    Smith, Charles

    1997-01-01

    An experimental study of the effects of spatially-limited (i.e. localized) surface suction on unsteady laminar and turbulent junction flows was performed using hydrogen bubble flow visualization and Particle Image Velocimetry (PIV...

  8. Room-temperature current blockade in atomically defined single-cluster junctions

    Science.gov (United States)

    Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

    2017-11-01

    Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

  9. Two-dimensional non-volatile programmable p-n junctions

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

    2017-09-01

    Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

  10. Josephson junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Wild, Georg Hermann

    2012-01-01

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  11. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  12. Electronic thermometry in tunable tunnel junction

    Science.gov (United States)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  13. Peltier cooling in molecular junctions

    Science.gov (United States)

    Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

    2018-02-01

    The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

  14. Transient Stuttering in Catatonic Bipolar Patients

    Directory of Open Access Journals (Sweden)

    Anthony B. Joseph

    1991-01-01

    Full Text Available Two cases of transient stuttering occurring in association with catatonia and bipolar disorder are described. Affective decompensation has been associated with lateralized cerebral dysfunction, and it is hypothesized that in some bipolar catatonic patients a concomitant disorder of the lateralization of language function may lead to a variety of clinical presentations including aphasia, mutism, and stuttering.

  15. Swimming in Deep Water: Childhood Bipolar Disorder

    Science.gov (United States)

    Senokossoff, Gwyn W.; Stoddard, Kim

    2009-01-01

    The authors focused on one parent's struggles in finding a diagnosis and intervention for a child who had bipolar disorder. The authors explain the process of identification, diagnosis, and intervention of a child who had bipolar disorder. In addition to the personal story, the authors provide information on the disorder and outline strategies…

  16. Bipolar disorder diagnosis: challenges and future directions

    Science.gov (United States)

    Phillips, Mary L; Kupfer, David J

    2018-01-01

    Bipolar disorder refers to a group of affective disorders, which together are characterised by depressive and manic or hypomanic episodes. These disorders include: bipolar disorder type I (depressive and manic episodes: this disorder can be diagnosed on the basis of one manic episode); bipolar disorder type II (depressive and hypomanic episodes); cyclothymic disorder (hypomanic and depressive symptoms that do not meet criteria for depressive episodes); and bipolar disorder not otherwise specified (depressive and hypomanic-like symptoms that do not meet the diagnostic criteria for any of the aforementioned disorders). Bipolar disorder type II is especially difficult to diagnose accurately because of the difficulty in differentiation of this disorder from recurrent unipolar depression (recurrent depressive episodes) in depressed patients. The identification of objective biomarkers that represent pathophysiologic processes that differ between bipolar disorder and unipolar depression can both inform bipolar disorder diagnosis and provide biological targets for the development of new and personalised treatments. Neuroimaging studies could help the identification of biomarkers that differentiate bipolar disorder from unipolar depression, but the problem in detection of a clear boundary between these disorders suggests that they might be better represented as a continuum of affective disorders. Innovative combinations of neuroimaging and pattern recognition approaches can identify individual patterns of neural structure and function that accurately ascertain where a patient might lie on a behavioural scale. Ultimately, an integrative approach, with several biological measurements using different scales, could yield patterns of biomarkers (biosignatures) to help identify biological targets for personalised and new treatments for all affective disorders. PMID:23663952

  17. Bipolar Disorder and Cognitive Therapy: A Commentary

    Science.gov (United States)

    Riskind, John H.

    2005-01-01

    This article comments on the three articles (Leahy, 2005; Newman, 2005; and Reilly-Harrington & Knauz, 2005) that deal with the applications of cognitive therapy to treatment of bipolar disorder. They focus on the uses of cognitive therapy in treating three important facets of the special problems of bipolar patients: rapid cycling, severe…

  18. Perceived parental rearing of bipolar offspring

    NARCIS (Netherlands)

    Reichart, C. G.; van der Ende, J.; Hillegers, M. H. J.; Wals, M.; Bongers, I. L.; Nolen, W. A.; Ormel, J.; Verhulst, F. C.

    Objective: To explore the impact of growing up with a parent with a bipolar disorder. First, we compared parental rearing behavior perceived by young adult offspring of bipolar parents with parental rearing behavior perceived by same aged young adults from the general population. Secondly, we

  19. Cognitive behavioral therapy for bipolar disorders

    OpenAIRE

    Lotufo Neto, Francisco

    2004-01-01

    Descrição dos objetivos e principais técnicas da terapia comportamental cognitiva usadas para a psicoterapia das pessoas com transtorno bipolar.Objectives and main techniques of cognitive behavior therapy for the treatment of bipolar disorder patients are described.

  20. Optomechanical transistor with mechanical gain

    Science.gov (United States)

    Zhang, X. Z.; Tian, Lin; Li, Yong

    2018-04-01

    We study an optomechanical transistor, where an input field can be transferred and amplified unidirectionally in a cyclic three-mode optomechanical system. In this system, the mechanical resonator is coupled simultaneously to two cavity modes. We show that it only requires a finite mechanical gain to achieve the nonreciprocal amplification. Here the nonreciprocity is caused by the phase difference between the linearized optomechanical couplings that breaks the time-reversal symmetry of this system. The amplification arises from the mechanical gain, which provides an effective phonon bath that pumps the mechanical mode coherently. This effect is analogous to the stimulated emission of atoms, where the probe field can be amplified when its frequency is in resonance with that of the anti-Stokes transition. We show that by choosing optimal parameters, this optomechanical transistor can reach perfect unidirectionality accompanied with strong amplification. In addition, the presence of the mechanical gain can result in ultralong delay in the phase of the probe field, which provides an alternative to controlling light transport in optomechanical systems.

  1. 2017 Bipolar Plate Workshop Summary Report

    Energy Technology Data Exchange (ETDEWEB)

    Kopasz, John P. [Argonne National Lab. (ANL), Argonne, IL (United States); Benjamin, Thomas G. [Argonne National Lab. (ANL), Argonne, IL (United States); Schenck, Deanna [Argonne National Lab. (ANL), Argonne, IL (United States)

    2017-08-17

    The Bipolar Plate (BP) Workshop was held at USCAR1 in Southfield, Michigan on February 14, 2017 and included 63 participants from industry, government agencies, universities, and national laboratories with expertise in the relevant fields. The objective of the workshop was to identify research and development (R&D) needs, in particular early-stage R&D, for bipolar plates for polymer electrolyte membrane (PEM) fuel cells for transportation applications. The focus of the workshop was on materials, manufacturing, and design aspects of bipolar plates with the goal of meeting DOE’s 2020 bipolar plate targets. Of special interest was the cost target of ≤$3/kW for the bipolar plate.

  2. High-performance vertical organic transistors.

    Science.gov (United States)

    Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

    2013-11-11

    Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Colour tuneable light-emitting transistor

    Energy Technology Data Exchange (ETDEWEB)

    Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

    2010-07-01

    In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

  4. Vibrationally coupled electron transport through single-molecule junctions

    Energy Technology Data Exchange (ETDEWEB)

    Haertle, Rainer

    2012-04-26

    Single-molecule junctions are among the smallest electric circuits. They consist of a molecule that is bound to a left and a right electrode. With such a molecular nanocontact, the flow of electrical currents through a single molecule can be studied and controlled. Experiments on single-molecule junctions show that a single molecule carries electrical currents that can even be in the microampere regime. Thereby, a number of transport phenomena have been observed, such as, for example, diode- or transistor-like behavior, negative differential resistance and conductance switching. An objective of this field, which is commonly referred to as molecular electronics, is to relate these transport phenomena to the properties of the molecule in the contact. To this end, theoretical model calculations are employed, which facilitate an understanding of the underlying transport processes and mechanisms. Thereby, one has to take into account that molecules are flexible structures, which respond to a change of their charge state by a profound reorganization of their geometrical structure or may even dissociate. It is thus important to understand the interrelation between the vibrational degrees of freedom of a singlemolecule junction and the electrical current flowing through the contact. In this thesis, we investigate vibrational effects in electron transport through singlemolecule junctions. For these studies, we calculate and analyze transport characteristics of both generic and first-principles based model systems of a molecular contact. To this end, we employ a master equation and a nonequilibrium Green's function approach. Both methods are suitable to describe this nonequilibrium transport problem and treat the interactions of the tunneling electrons on the molecular bridge non-perturbatively. This is particularly important with respect to the vibrational degrees of freedom, which may strongly interact with the tunneling electrons. We show in detail that the resulting

  5. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G

    1963-01-01

    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  6. Protonic transistors from thin reflecting films

    Energy Technology Data Exchange (ETDEWEB)

    Ordinario, David D.; Phan, Long; Jocson, Jonah-Micah [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Nguyen, Tam [Department of Chemistry, University of California, Irvine, California 92697 (United States); Gorodetsky, Alon A., E-mail: alon.gorodetsky@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Chemistry, University of California, Irvine, California 92697 (United States)

    2015-01-01

    Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.

  7. Transistors using crystalline silicon devices on glass

    Science.gov (United States)

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  8. Gold nanoparticle-pentacene memory-transistors

    OpenAIRE

    Novembre , Christophe; Guerin , David; Lmimouni , Kamal; Gamrat , Christian; Vuillaume , Dominique

    2008-01-01

    We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off sta...

  9. DeepBipolar: Identifying genomic mutations for bipolar disorder via deep learning.

    Science.gov (United States)

    Laksshman, Sundaram; Bhat, Rajendra Rana; Viswanath, Vivek; Li, Xiaolin

    2017-09-01

    Bipolar disorder, also known as manic depression, is a brain disorder that affects the brain structure of a patient. It results in extreme mood swings, severe states of depression, and overexcitement simultaneously. It is estimated that roughly 3% of the population of the United States (about 5.3 million adults) suffers from bipolar disorder. Recent research efforts like the Twin studies have demonstrated a high heritability factor for the disorder, making genomics a viable alternative for detecting and treating bipolar disorder, in addition to the conventional lengthy and costly postsymptom clinical diagnosis. Motivated by this study, leveraging several emerging deep learning algorithms, we design an end-to-end deep learning architecture (called DeepBipolar) to predict bipolar disorder based on limited genomic data. DeepBipolar adopts the Deep Convolutional Neural Network (DCNN) architecture that automatically extracts features from genotype information to predict the bipolar phenotype. We participated in the Critical Assessment of Genome Interpretation (CAGI) bipolar disorder challenge and DeepBipolar was considered the most successful by the independent assessor. In this work, we thoroughly evaluate the performance of DeepBipolar and analyze the type of signals we believe could have affected the classifier in distinguishing the case samples from the control set. © 2017 Wiley Periodicals, Inc.

  10. A YinYang bipolar fuzzy cognitive TOPSIS method to bipolar disorder diagnosis.

    Science.gov (United States)

    Han, Ying; Lu, Zhenyu; Du, Zhenguang; Luo, Qi; Chen, Sheng

    2018-05-01

    Bipolar disorder is often mis-diagnosed as unipolar depression in the clinical diagnosis. The main reason is that, different from other diseases, bipolarity is the norm rather than exception in bipolar disorder diagnosis. YinYang bipolar fuzzy set captures bipolarity and has been successfully used to construct a unified inference mathematical modeling method to bipolar disorder clinical diagnosis. Nevertheless, symptoms and their interrelationships are not considered in the existing method, circumventing its ability to describe complexity of bipolar disorder. Thus, in this paper, a YinYang bipolar fuzzy multi-criteria group decision making method to bipolar disorder clinical diagnosis is developed. Comparing with the existing method, the new one is more comprehensive. The merits of the new method are listed as follows: First of all, multi-criteria group decision making method is introduced into bipolar disorder diagnosis for considering different symptoms and multiple doctors' opinions. Secondly, the discreet diagnosis principle is adopted by the revised TOPSIS method. Last but not the least, YinYang bipolar fuzzy cognitive map is provided for the understanding of interrelations among symptoms. The illustrated case demonstrates the feasibility, validity, and necessity of the theoretical results obtained. Moreover, the comparison analysis demonstrates that the diagnosis result is more accurate, when interrelations about symptoms are considered in the proposed method. In a conclusion, the main contribution of this paper is to provide a comprehensive mathematical approach to improve the accuracy of bipolar disorder clinical diagnosis, in which both bipolarity and complexity are considered. Copyright © 2018 Elsevier B.V. All rights reserved.

  11. A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

    OpenAIRE

    Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

    2009-01-01

    We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

  12. Valley detection using a graphene gradual pn junction with spin–orbit coupling: An analytical conductance calculation

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mou, E-mail: yang.mou@hotmail.com [Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Wang, Rui-Qiang [Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

    2015-09-04

    Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we analytically calculated that pn conductance with the spin–orbit coupling and stagger potential taken into account. Our analytical expression indicates that the energy gap causes the conductance to drop a constant value with respect to that without gap in a certain parameter region, and manifests that the curve of the conductance versus the stagger potential consists of two Gaussian peaks – one valley contributes one peak. The latter feature allows one to detect the valley polarization without using double-interface resonant devices. - Highlights: • Analytical conductance formula of the gradual graphene pn junction with spin–orbit coupling in the whole bipolar region. • Exploring the valley-dependent transport of gradual graphene pn junctions analytically. • Conductance peak without resonance.

  13. 0-π phase-controllable thermal Josephson junction

    Science.gov (United States)

    Fornieri, Antonio; Timossi, Giuliano; Virtanen, Pauli; Solinas, Paolo; Giazotto, Francesco

    2017-05-01

    Two superconductors coupled by a weak link support an equilibrium Josephson electrical current that depends on the phase difference ϕ between the superconducting condensates. Yet, when a temperature gradient is imposed across the junction, the Josephson effect manifests itself through a coherent component of the heat current that flows opposite to the thermal gradient for |ϕ| heat currents can be inverted by adding a π shift to ϕ. In the static electrical case, this effect has been obtained in a few systems, for example via a ferromagnetic coupling or a non-equilibrium distribution in the weak link. These structures opened new possibilities for superconducting quantum logic and ultralow-power superconducting computers. Here, we report the first experimental realization of a thermal Josephson junction whose phase bias can be controlled from 0 to π. This is obtained thanks to a superconducting quantum interferometer that allows full control of the direction of the coherent energy transfer through the junction. This possibility, in conjunction with the completely superconducting nature of our system, provides temperature modulations with an unprecedented amplitude of ∼100 mK and transfer coefficients exceeding 1 K per flux quantum at 25 mK. Then, this quantum structure represents a fundamental step towards the realization of caloritronic logic components such as thermal transistors, switches and memory devices. These elements, combined with heat interferometers and diodes, would complete the thermal conversion of the most important phase-coherent electronic devices and benefit cryogenic microcircuits requiring energy management, such as quantum computing architectures and radiation sensors.

  14. Lower switch rate in depressed patients with bipolar II than bipolar I disorder treated adjunctively with second-generation antidepressants

    NARCIS (Netherlands)

    Altshuler, LL; Suppes, T; Nolen, WA; Leverich, G; Keck, PE; Frye, MA; Kupka, R; McElroy, SL; Grunze, H; Kitchen, CMR; Post, R; Black, D.O.

    Objectives: The authors compared the switch rate into hypomania/mania in depressed patients treated with second-generation antidepressants who had either bipolar I or bipolar II disorder. Method: In a 10-week trial, 184 outpatients with bipolar depression (134 with bipolar I disorder, 48 with

  15. Brief Report: A Family Risk Study Exploring Bipolar Spectrum Problems and Cognitive Biases in Adolescent Children of Bipolar Parents

    Science.gov (United States)

    Espie, Jonathan; Jones, Steven H.; Vance, Yvonne H.; Tai, Sara J.

    2012-01-01

    Children of parents with bipolar disorder are at increased risk of bipolar spectrum diagnoses. This cross-sectional study explores cognitive factors in the prediction of vulnerability to bipolar disorder. Adolescents at high-risk (with a parent with bipolar disorder; n = 23) and age and gender matched adolescents (n = 24) were recruited. Parent…

  16. VALPROATE, BIPOLAR DISORDER AND POLYCYSTIC OVARIAN SYNDROME.

    Science.gov (United States)

    Okanović, Milana; Zivanović, Olga

    2016-01-01

    Polycystic ovarian syndrome is a syndrome of ovarian dysfunction with the principal features of hyperandrogenism and polycystic ovary morphology. A large number of studies conducted on this topic have suggested a possible role of anticonvulsants, particularly valproate, in the pathogenesis or risk factors associated with polycystic ovarian syndrome. Bipolar treatment guidelines from Canada and the United States of America recommend valproate as the first line strategy in the acute treatment of bipolar disorder. Most persons with bipolar disorder require maintenance treatment. Long-term administration of valproate in women with bipolar disorder or epilepsy is believed to result in the increased risk of hyperandrogenism, menstrual abnormalities and polycystic ovaries. Valproate may also increase the risk of infertility and other associated symptoms of polycystic ovarian syndrome. Therefore, particular caution is indicated in the use of valproate in women of reproductive age. The treatment of the female patients with bipolar disorder presents various challenges for the clinician. Every woman of reproductive age needs to know the risk and benefits of her pharmacologic treatment options. Bipolar disorder should be considered chronic disorder, whose development is largely affected by hormonal changes and reproductive cycle in women. These issues should be researched more thoroughly in order to opt for the most appropriate treatment in women with bipolar disorder.

  17. Bipolar plates for PEM fuel cells

    Science.gov (United States)

    Middelman, E.; Kout, W.; Vogelaar, B.; Lenssen, J.; de Waal, E.

    The bipolar plates are in weight and volume the major part of the PEM fuel cell stack, and are also a significant contributor to the stack costs. The bipolar plate is therefore a key component if power density has to increase and costs must come down. Three cell plate technologies are expected to reach targeted cost price levels, all having specific advantages and drawbacks. NedStack has developed a conductive composite materials and a production process for fuel cell plates (bipolar and mono-polar). The material has a high electric and thermal conductivity, and can be processed into bipolar plates by a proprietary molding process. Process cycle time has been reduced to less than 10 s, making the material and process suitable for economical mass production. Other development work to increase material efficiency resulted in thin bipolar plates with integrated cooling channels, and integrated seals, and in two-component bipolar plates. Total thickness of the bipolar plates is now less than 3 mm, and will be reduced to 2 mm in the near future. With these thin integrated plates it is possible to increase power density up to 2 kW/l and 2 kW/kg, while at the same time reducing cost by integrating other functions and less material use.

  18. Distinctions of bipolar disorder symptoms in adolescence.

    Science.gov (United States)

    Gudiene, Devika; Leskauskas, Darius; Markeviciūte, Aurelija; Klimavicius, Dalius; Adomaitiene, Virginija

    2008-01-01

    Bipolar disorder in adolescents is a serious mental illness with problematic diagnosis that adversely affects social, academic, emotional, and family functioning. The objective of this study was to analyze features of premorbid and clinical symptoms, comorbidity, and course of bipolar disorder in adolescence. Data for analysis were collected from all case histories (N=6) of 14-18-year-old patients, hospitalized with diagnosis of bipolar disorder in the Unit of Children's and Adolescents' Psychiatry, Department of Psychiatry, Hospital of Kaunas University of Medicine, during the period from 2000 to 2005. Analysis of bipolar disorder course showed that five patients previously had been diagnosed with an episode of depression. The most frequent symptoms typical to bipolar disorder were disobedience and impulsive behavior, rapid changes of mood. The most common premorbid features were frequent changes of mood, being active in communication, hyperactive behavior. Adolescence-onset bipolar disorder was frequently comorbid with emotionally instable personality disorder, borderline type. Findings of the study confirm the notion that oppositional or impulsive behavior, rapid changes of mood without any reason, dysphoric mood and euphoric mood episodes with increased energy were cardinal symptoms of bipolar disorder with mania in adolescents. Most frequent premorbid features of these patients were quite similar to attention-deficit/hyperactivity disorder making differential diagnosis problematic.

  19. Liquid crystals for organic transistors (Conference Presentation)

    Science.gov (United States)

    Hanna, Jun-ichi; Iino, Hiroaki

    2016-09-01

    Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

  20. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias

    2014-01-01

    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  1. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  2. Transport properties of molecular junctions

    CERN Document Server

    Zimbovskaya, Natalya A

    2013-01-01

    A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions is presented. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts—a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers ...

  3. NbN tunnel junctions

    International Nuclear Information System (INIS)

    Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

    1984-09-01

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

  4. Transfer-free fabrication of graphene transistors

    OpenAIRE

    Wessely, P.J.; Wessely, F.; Birinci, E.; Schwalke, U.; Riedinger, B.

    2012-01-01

    The authors invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon, a catalyst system of nanometer thin aluminum/nickel double layer is used. This catalyst system is structured via liftoff before the wafer enters the catalytic chemical vapor deposition (CCVD) chamber. In the subsequent methane-based growth process, monolayer graphene field-effect transistors and...

  5. Diffusion pipes at PNP switching transistors

    International Nuclear Information System (INIS)

    Sachelarie, D.; Postolache, C.; Gaiseanu, F.

    1976-01-01

    The appearance of the ''diffusion pipes'' greatly affects the fabrication of the PNP high-frequency/very-fast-switching transistors. A brief review of the principal problems connected to the presence of these ''pipes'' is made. A research program is presented which permitted the fabrication of the PNP switching transistors at ICCE-Bucharest, with transition frequency fsub(T) = 1.2 GHz and storage time tsub(s) = 4.5 ns. (author)

  6. Integrated amplifying circuit with MOS transistors

    Energy Technology Data Exchange (ETDEWEB)

    Baylac, B; Merckel, G; Meunier, P

    1974-01-25

    The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

  7. Paired structures and bipolar knowledge representation

    DEFF Research Database (Denmark)

    Montero, Javier; Bustince, Humberto; Franco, Camilo

    In this strictly positional paper we propose a general approach to bipolar knowledge representation, where the meaning of concepts can be modelled by examining their decomposition into opposite and neutral categories. In particular, it is the semantic relationship between the opposite categories...... and at the same time the type of neutrality rising in between opposites. Based on this first level of bipolar knowledge representation, paired structures in fact offer the means to characterize a specific bipolar valuation scale depending on the meaning of the concept that has to be verified. In this sense...

  8. Bipolar Disorder and Early Affective Trauma.

    Science.gov (United States)

    de Codt, Aloise; Monhonval, Pauline; Bongaerts, Xavier; Belkacemi, Ikram; Tecco, Juan Martin

    2016-09-01

    Bipolar disorder is a chronic psychiatric disease with a high prevalence and is a major psychosocial and medical burden. The exact etiological pathways of bipolar disorder are not fully understood. Genetic factors are known to play an important role in the etiology of bipolar disorder. However, high rates of discordance among identical twins and a growing body of evidence that environmental factors such as early stress can influence the onset and course of psychiatric diseases underline the importance of additional etiological mechanisms of bipolar disorders. There has been little investigation about early trauma in bipolar disorder. The aim of this study was to review the literature on the association between early traumatic interactions like child neglect, mistreatment, abuse or early parental separation and the occurrence of bipolar disorder in adulthood or impact on the course of the disease. Studies investigating associations between child neglect, mistreatment, abuse or early parental separation and occurrence of bipolar disorder in adulthood or impact on the course of the disease were searched in the Pubmed database. More than 700 articles were sorted independently by two of the authors using predefined criteria. Only research articles, reviews and meta-analyses were selected for this review. 53 articles met the inclusion criteria. To date, four systematic reviews partially addressed our research question. Early trauma is more frequently found in the past of bipolar patients than in the general population. Studies support a harmful effect of childhood trauma on the course of bipolar disease, with more anxious, depressive or psychotic symptoms, an early age of onset and a worse prognosis. Early trauma is more often found in the past of bipolar adult patients than the general population and studies support a harmful effect of childhood trauma on the course of bipolar disease, with more anxious, depressive or psychotic symptoms, an early age of onset and a

  9. Ionizing radiations simulation on bipolar components

    International Nuclear Information System (INIS)

    Montagner, X.

    1999-01-01

    This thesis presents the ionizing radiation effects on bipolar components and more specially their behavior facing the total dose. The first part is devoted to the radiation environments with a special attention to the spatial environments and new emergent environments. The specificities of bipolar components are then presented and their behavior facing the interactions. The physical mechanisms bound to the dose rate are also discussed. The second part presents a physical analysis of degradations induced by the cumulated dosimetry on bipolar components and simulation with the ATLAS code. The third part exposes an electric empirical simulation induced by the cumulated dose in static conditions. (A.L.B.)

  10. Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

    Directory of Open Access Journals (Sweden)

    Agnes Nagy

    2011-01-01

    Full Text Available The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n, physical explanation and simulation procedure, as well as a new extraction method for the diffusion potential VDE(T, based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

  11. Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax 650GHz for 340GHz Transmitter

    Science.gov (United States)

    2008-12-01

    PROPER IDENTIFICATION . NOT TO BE USED FOR INTERIM PROGRESS REPORTS SEE PAGE 2 FOR INTERIM PROGRESS REPORT INSTRUCTIONS MEMORANDUM OF TRANSMITTAL...conduction band lineup . These advantages have led to rapid progress in increasing device bandwidths, allowing competitive RF performance with established

  12. High-frequency noise modeling of Si(Ge) bipolar transistors

    NARCIS (Netherlands)

    Vitale, F.

    2014-01-01

    The design and the optimization of electronic systems often requires a detailed knowledge of the inherent noise generated within semiconductor active devices, constituting the core of such systems. Examples of applications in which noise is a key issue include receiver front-ends in radiofrequency

  13. Gravitation at the Josephson Junction

    Directory of Open Access Journals (Sweden)

    Victor Atanasov

    2018-01-01

    Full Text Available A geometric potential from the kinetic term of a constrained to a curved hyperplane of space-time quantum superconducting condensate is derived. An energy conservation relation involving the geometric field at every material point in the superconductor is demonstrated. At a Josephson junction the energy conservation relation implies the possibility of transforming electric energy into geometric field energy, that is, curvature of space-time. Experimental procedures to verify that the Josephson junction can act as a voltage-to-curvature converter are discussed.

  14. Progression along the Bipolar Spectrum: A Longitudinal Study of Predictors of Conversion from Bipolar Spectrum Conditions to Bipolar I and II Disorders

    Science.gov (United States)

    Alloy, Lauren B.; Urošević, Snežana; Abramson, Lyn Y.; Jager-Hyman, Shari; Nusslock, Robin; Whitehouse, Wayne G.; Hogan, Michael

    2011-01-01

    Little longitudinal research has examined progression to more severe bipolar disorders in individuals with “soft” bipolar spectrum conditions. We examine rates and predictors of progression to bipolar I and II diagnoses in a non-patient sample of college-age participants (n = 201) with high General Behavior Inventory scores and childhood or adolescent onset of “soft” bipolar spectrum disorders followed longitudinally for 4.5 years from the Longitudinal Investigation of Bipolar Spectrum (LIBS) project. Of 57 individuals with initial cyclothymia or bipolar disorder not otherwise specified (BiNOS) diagnoses, 42.1% progressed to a bipolar II diagnosis and 10.5% progressed to a bipolar I diagnosis. Of 144 individuals with initial bipolar II diagnoses, 17.4% progressed to a bipolar I diagnosis. Consistent with hypotheses derived from the clinical literature and the Behavioral Approach System (BAS) model of bipolar disorder, and controlling for relevant variables (length of follow-up, initial depressive and hypomanic symptoms, treatment-seeking, and family history), high BAS sensitivity (especially BAS Fun Seeking) predicted a greater likelihood of progression to bipolar II disorder, whereas early age of onset and high impulsivity predicted a greater likelihood of progression to bipolar I (high BAS sensitivity and Fun-Seeking also predicted progression to bipolar I when family history was not controlled). The interaction of high BAS and high Behavioral Inhibition System (BIS) sensitivities also predicted greater likelihood of progression to bipolar I. We discuss implications of the findings for the bipolar spectrum concept, the BAS model of bipolar disorder, and early intervention efforts. PMID:21668080

  15. Modelling, development and optimization of integrated power LDMOS transistor. Performance limits in terms of energy; Modelisation, conception et optimisation de composant de puissance lateral DMOS integre. Etude des limites de performance en energie

    Energy Technology Data Exchange (ETDEWEB)

    Farenc, D.

    1997-12-16

    Technologies for Smart Power Integrated Circuits combine into a single chip Bipolar and CMOS transistors, plus power with lateral or vertical DMOS transistors. Complexity which has been increasing dramatically since the mid-80`s has allowed to integrate, into a single monolithic solution, entire systems. This thesis deals with the modelling, conception and test of the power integrated LDMOS transistor. The power LDMOS transistor is used as a switching device. It is characterized by two parameters which are the Specific On-resistance R{sub sp} and the breakdown voltage BV{sub DSS}. The LDMOS transistor developed for the new Smart Power technology exhibits a Specific On-resistance of 200 m{Omega}{sup *}mm{sup 2} and a breakdown voltage of 60 V. This device is dedicated to automotive applications. A reduction of the power device which is achieved with a low Specific On-resistance puts forward new issues such as the maximum Energy capability. When the power device is switched-off on an inductive load, a certain amount of energy is dissipated; if it is beyond a certain limit, the device is destroyed. Our goal is to determine the energy limits which are associated with our new Power integrated LDMOS transistor. (author) 28 refs.

  16. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    Science.gov (United States)

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  17. The thermodynamics of bipolarity: a bifurcation model of bipolar illness and bipolar character and its psychotherapeutic applications.

    Science.gov (United States)

    Sabelli, H C; Carlson-Sabelli, L; Javaid, J I

    1990-11-01

    Two models dominate current formulations of bipolar illness: the homeostatic model implicit in Freud's psychodynamics and most neuroamine deficit/excess theories; and the oscillatory model of exaggerated biological rhythms. The homeostatic model is based on the closed systems approach of classic thermodynamics, while the oscillatory model requires the open systems approach of modern thermodynamics. Here we present a thermodynamic model of bipolarity that includes both homeostatic and oscillatory features and adds the most important feature of open systems thermodynamics: the creation of novel structures in bifurcation processes. According to the proposed model, bipolarity is the result of exaggerated biological energy that augments homeostatic, oscillatory and creative psychological processes. Only low-energy closed systems tend to rest ("point attractor") and entropic disorder. Open processes containing and exchanging energy fluctuate between opposite states ("periodic attractors"); they are characteristic of most physiological rhythms and are exaggerated in bipolar subjects. At higher energies, their strong fluctuations destroy pre-existing patterns and structures, produce turbulence ("chaotic attractors"), which sudden switches between opposite states, and create new and more complex structures. Likewise, high-energy bipolars develop high spontaneity, great fluctuations between opposite moods, internal and interpersonal chaos, and enhanced creativity (personal, artistic, professional) as well as psychopathology (personality deviations, psychotic delusions). Offered here is a theoretical explanation of the dual--creative and destructive--nature of bipolarity in terms of the new enantiodromic concept of entropy generalized by process theory. Clinically, this article offers an integrative model of bipolarity that accounts for many clinical features and contributes to a definition of the bipolar personality.

  18. Bipolar Electrode Sample Preparation Devices

    Science.gov (United States)

    Wang, Yi (Inventor); Song, Hongjun (Inventor); Pant, Kapil (Inventor)

    2017-01-01

    An analyte selection device can include: a body defining a fluid channel having a channel inlet and channel outlet; a bipolar electrode (BPE) between the inlet and outlet; one of an anode or cathode electrically coupled with the BPE on a channel inlet side of the BPE and the other of the anode or cathode electrically coupled with the BPE on a channel outlet side of the BPE; and an electronic system operably coupled with the anode and cathode so as to polarize the BPE. The fluid channel can have any shape or dimension. The channel inlet and channel outlet can be longitudinal or lateral with respect to the longitudinal axis of the channel. The BPE can be any metallic member, such as a flat plate on a wall or mesh as a barrier BPE. The anode and cathode can be located at a position that polarizes the BPE.

  19. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  20. OPEN-LOOP CONTROL OF A BIPOLAR STEPPER MOTORS USING THE SPECIALIZED INTEGRATED CIRCUITS

    Directory of Open Access Journals (Sweden)

    Gheorghe BALUTA

    2004-12-01

    Full Text Available This paper describes the open-loop control of a stepper motors. Bipolar stepper motors can be driven with an L297, an L298N bridge driver and very few external components. With an L298N this configuration drives motors with winding currents up to 2.5A. If very high powers are required an equivalent circuit made with discrete transistors replaces the bridge driver. Together these two chips form a complete microprocessor-to-stepper motor interface. The command signals for the controller L297 are generated through an IBM-PC486 interface. It was developed an open-loop command program written in BorlandC programming language.

  1. Climatic factors and bipolar affective disorder

    DEFF Research Database (Denmark)

    Christensen, Ellen Margrethe; Larsen, Jens Knud; Gjerris, Annette

    2008-01-01

    In bipolar disorder, the factors provoking a new episode are unknown. As a seasonal variation has been noticed, it has been suggested that weather conditions may play a role. The aim of the study was to elucidate whether meteorological parameters influence the development of new bipolar phases....... A group of patients with at least three previous hospitalizations for bipolar disorder was examined every 3 months for up to 3 years. At each examination an evaluation of the affective phase was made according to the Hamilton Depression Scale (HAM-D(17)), and the Bech-Rafaelsen Mania Rating Scale (MAS......). In the same period, daily recordings from the Danish Meteorological Institute were received. We found no correlations between onset of bipolar episodes [defined as MAS score of 11 or more (mania) and as HAM-D(17) score of 12 or more (depression)] and any meteorological parameters. We found a statistical...

  2. Bipolar or unipolar? : A brain teasing question

    NARCIS (Netherlands)

    Rive, M.M.

    2017-01-01

    During the depressed or remitted states, major depressive disorder (MDD) and bipolar disorder (BD) are difficult to distinguish clinically. Treatments for both disorders differ, and inadequate treatment may lead to chronicity, poor psychosocial functioning, or even suicide. Although early

  3. Internet use by patients with bipolar disorder

    DEFF Research Database (Denmark)

    Bauer, Rita; Conell, Jörn; Glenn, Tasha

    2016-01-01

    There is considerable international interest in online education of patients with bipolar disorder, yet little understanding of how patients use the Internet and other sources to seek information. 1171 patients with a diagnosis of bipolar disorder in 17 countries completed a paper-based, anonymous...... survey. 81% of the patients used the Internet, a percentage similar to the general public. Older age, less education, and challenges in country telecommunications infrastructure and demographics decreased the odds of using the Internet. About 78% of the Internet users looked online for information...... on bipolar disorder or 63% of the total sample. More years of education in relation to the country mean, and feeling very confident about managing life decreased the odds of seeking information on bipolar disorder online, while having attended support groups increased the odds. Patients who looked online...

  4. Are rates of pediatric bipolar disorder increasing?

    DEFF Research Database (Denmark)

    Kessing, Lars Vedel; Vradi, Eleni; Andersen, Per Kragh

    2014-01-01

    Studies from the USA suggest that rates of pediatric bipolar disorder have increased since the mid-90s, but no study outside the USA has been published on the rates of pediatric bipolar disorder. Further, it is unclear whether an increase in rates reflects a true increase in the illness or more...... diagnostic attention. Using nationwide registers of all inpatients and outpatients contacts to all psychiatric hospitals in Denmark, we investigated (1) gender-specific rates of incident pediatric mania/bipolar disorder during a period from 1995 to 2012, (2) whether age and other characteristics...... for pediatric mania/bipolar disorder changed during the calendar period (1995 to 2003 versus 2004 to 2012), and (3) whether the diagnosis is more often made at first psychiatric contact in recent time compared to earlier according to gender. Totally, 346 patients got a main diagnosis of a manic episode (F30...

  5. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Modulation and Control of Charge Transport Through Single-Molecule Junctions.

    Science.gov (United States)

    Wang, Kun; Xu, Bingqian

    2017-02-01

    The ability to modulate and control charge transport though single-molecule junction devices is crucial to achieving the ultimate goal of molecular electronics: constructing real-world-applicable electronic components from single molecules. This review aims to highlight the progress made in single-molecule electronics, emphasizing the development of molecular junction electronics in recent years. Among many techniques that attempt to wire a molecule to metallic electrodes, the single-molecule break junction (SMBJ) technique is one of the most reliable and tunable experimental platforms for achieving metal-molecule-metal configurations. It also provides great freedom to tune charge transport through the junction. Soon after the SMBJ technique was introduced, it was extensively used to measure the conductances of individual molecules; however, different conductances were obtained for the same molecule, and it proved difficult to interpret this wide distribution of experimental data. This phenomenon was later found to be mainly due to a lack of precise experimental control and advanced data analysis methods. In recent years, researchers have directed considerable effort into advancing the SMBJ technique by gaining a deeper physical understanding of charge transport through single molecules and thus enhancing its potential applicability in functional molecular-scale electronic devices, such as molecular diodes and molecular transistors. In parallel with that research, novel data analysis methods and approaches that enable the discovery of hidden yet important features in the data are being developed. This review discusses various aspects of molecular junction electronics, from the initial goal of molecular electronics, the development of experimental techniques for creating single-molecule junctions and determining single-molecule conductance, to the characterization of functional current-voltage features and the investigation of physical properties other than charge

  7. Biological dysrhythm in remitted bipolar I disorder.

    Science.gov (United States)

    Iyer, Aishwarya; Palaniappan, Pradeep

    2017-12-01

    Recent treatment guidelines support treatment of biological rhythm abnormalities as a part of treatment of bipolar disorder, but still, literature examining various domains (Sleep, Activity, Social, and Eating) of biological rhythm and its clinical predictors are less. The main aim of our study is to compare various domains of biological rhythm among remitted bipolar I subjects and healthy controls. We also explored for any association between clinical variables and biological rhythm among bipolar subjects. 40 subjects with Bipolar I disorder and 40 healthy controls who met inclusion and exclusion criteria were recruited for the study. Diagnoses were ascertained by a qualified psychiatrist using MINI 5.0. Sociodemographic details, biological rhythm (BRIAN-Biological Rhythm Interview of assessment in Neuropsychiatry) and Sleep functioning (PSQI- Pittsburgh Sleep Quality Index) were assessed in all subjects. Mean age of the Bipolar subjects and controls were 41.25±11.84years and 38.25±11.25 years respectively. Bipolar subjects experienced more biological rhythm disturbance when compared to healthy controls (total BRIAN score being 34.25±9.36 vs 28.2±6.53) (p=0.002). Subsyndromal depressive symptoms (HDRS) had significant positive correlation with BRIAN global scores(r=0.368, p=0.02). Linear regression analysis showed that number of episodes which required hospitalization (β=0.601, t=3.106, P=0.004), PSQI (β=0.394, t=2.609, p=0.014), HDRS (β=0.376, t=2.34, t=0.036) explained 31% of variance in BRIAN scores in remitted bipolar subjects. Biological rhythm disturbances seem to persist even after clinical remission of bipolar illness. More studies to look into the impact of subsyndromal depressive symptoms on biological rhythm are needed. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Suicide in bipolar disorder: a review.

    Science.gov (United States)

    Latalova, Klara; Kamaradova, Dana; Prasko, Jan

    2014-06-01

    Suicide is a leading cause of death in patients with bipolar disorder. Risk factors and prevention of suicide in this illness are the focus of considerable current research. MEDLINE data base was searched for the key words "bipolar disorder" with "suicide", "lithium" with "suicide", "anticonvulsants" with "bipolar disorder", and "anticonvulsants" with "bipolar disorder" and with "suicide". No language or time constraints were applied. The lists of references were searched manually to find additional articles. It is estimated that 25% to 50% of patients with bipolar disorder will attempt suicide at least once over their lifetime, and that 8% to 19% will complete suicide. Mortality rates from cardiovascular diseases are elevated in bipolar disorder. Risk factors for suicide include younger age of onset of the illness, history of past suicidal behavior, family history of suicide acts, comorbid borderline personality disorder and substance use disorders, and hopelessness. The warning signs calling for immediate action include the patients threatening to harm themselves, or looking for ways to kill themselves (seeking access to pills or weapons), or the patient talking or writing about death. Robust evidence supports the effects of lithium treatment in reducing suicidal attempts and completions in bipolar disorder. The evidence for antisuicidal effects of anticonvulsants is weaker. Nevertheless, valproate and other anticonvulsants are frequently prescribed as mood stabilizers. There have been controversial suggestions that this treatment may elevate the risk of suicide, but the data supporting this are not convincing. Psychoeducation can reduce the number of suicide attempts and completions. Suicide in bipolar disorder is a major public health problem. Recent research has expanded our knowledge of risk factors and warning signs. Nevertheless, it appears that the introduction of lithium treatment in the 1970s was the most recent important breakthrough in the prevention

  9. Stability of large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

    The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

  10. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

  11. Tunnel field-effect transistor with two gated intrinsic regions

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2014-07-01

    Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

  12. Single-electron transistors fabricated with sidewall spacer patterning

    Science.gov (United States)

    Park, Byung-Gook; Kim, Dae Hwan; Kim, Kyung Rok; Song, Ki-Whan; Lee, Jong Duk

    2003-09-01

    We have implemented a sidewall spacer patterning method for novel dual-gate single-electron transistor (DGSET) and metal-oxide-semiconductor-based SET (MOSET) based on the uniform SOI wire, using conventional lithography and processing technology. A 30 nm wide silicon quantum wire is defined by a sidewall spacer patterning method, and depletion gates for two tunnel junctions of the DGSET are formed by the doped polycrystalline silicon sidewall. The fabricated DGSET and MOSET show clear single-electron tunneling phenomena at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions. On the basis of the phase control capability of the sidewall depletion gates, we have proposed a complementary self-biasing method, which enables the SET/CMOS hybrid multi-valued logic (MVL) to operate perfectly well at high temperature, where the peak-to-valley current ratio of Coulomb oscillation severely decreases. The suggested scheme is evaluated by SPICE simulation with an analytical DGSET model, and it is confirmed that even DGSETs with a large Si island can be utilized efficiently in the multi-valued logic.

  13. Preparation of bipolar membranes by electrospinning

    International Nuclear Information System (INIS)

    Pan, Jiefeng; Hou, Linxiao; Wang, Qiuyue; He, Yubin; Wu, Liang; Mondal, Abhishek N.; Xu, Tongwen

    2017-01-01

    A new preparative pathway for the bipolar membranes was initiated via the electrospinning and hot-press process. The prepared bipolar membrane was consisting of sulfonated poly (phenylene oxide), polyethylene glycol, and quaternized poly (phenylene oxide). The above mentioned membrane was fabricated by the continuous electrospinning of the respective layer, followed by the solvent atmosphere treatment and hot-pressing, to obtain a transparent and dense structure. The thickness of each layer can be easily tuned by controlling the electrospinning parameters. The clear interfacial structure was observed and confirmed by the scanning electron microscope. The bipolar performance is evaluated by the current–voltage curves and production yield of acid and base. The final optimized bipolar membrane had similar yield of acid and base as the casting membrane. However, extremely lower potential drop value was observed when they are applied for the production of acid and base. The experimental results showed that, electrospinning is an effective and well controlled way to fabricate bipolar membranes, in which anion or cation exchange layer as well as interfacial layer can be easily changed or added as requested. - Highlights: • Bipolar membranes were prepared through electrospinning followed by post-treatment. • As-prepared membranes were successfully applied in electrodialysis for production of acid and base. • Electrospun membranes exhibit better performance than the casting ones.

  14. Preparation of bipolar membranes by electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Jiefeng; Hou, Linxiao; Wang, Qiuyue; He, Yubin; Wu, Liang; Mondal, Abhishek N.; Xu, Tongwen, E-mail: twxu@ustc.edu.cn

    2017-01-15

    A new preparative pathway for the bipolar membranes was initiated via the electrospinning and hot-press process. The prepared bipolar membrane was consisting of sulfonated poly (phenylene oxide), polyethylene glycol, and quaternized poly (phenylene oxide). The above mentioned membrane was fabricated by the continuous electrospinning of the respective layer, followed by the solvent atmosphere treatment and hot-pressing, to obtain a transparent and dense structure. The thickness of each layer can be easily tuned by controlling the electrospinning parameters. The clear interfacial structure was observed and confirmed by the scanning electron microscope. The bipolar performance is evaluated by the current–voltage curves and production yield of acid and base. The final optimized bipolar membrane had similar yield of acid and base as the casting membrane. However, extremely lower potential drop value was observed when they are applied for the production of acid and base. The experimental results showed that, electrospinning is an effective and well controlled way to fabricate bipolar membranes, in which anion or cation exchange layer as well as interfacial layer can be easily changed or added as requested. - Highlights: • Bipolar membranes were prepared through electrospinning followed by post-treatment. • As-prepared membranes were successfully applied in electrodialysis for production of acid and base. • Electrospun membranes exhibit better performance than the casting ones.

  15. Comorbidity bipolar disorder and personality disorders.

    Science.gov (United States)

    Latalova, Klara; Prasko, Jan; Kamaradova, Dana; Sedlackova, Jana; Ociskova, Marie

    2013-01-01

    Outcome in bipolar patients can be affected by comorbidity of other psychiatric disorders. Comorbid personality disorders are frequent and may complicate the course of bipolar illness. We have much information about treating patients with uncomplicated bipolar disorder (BD) but much less knowledge about possibilities for patients with the comorbidity of BD and personality disorder. We conducted a series of literature searches using, as key words or as items in indexed fields, bipolar disorder and personality disorder or personality traits. Articles were obtained by searching MEDLINE from 1970 to 2012. In addition, we used other papers cited in articles from these searches, or cited in articles used in our own work. Tests of personality traits indicated that euthymic bipolar patients have higher scores on harm avoidance, reward dependence, and novelty seeking than controls. Elevation of novelty seeking in bipolar patients is associated with substance abuse comorbidity. Comorbidity with personality disorders in BD patients is associated with a more difficult course of illness (such as longer episodes, shorter time euthymic, and earlier age at onset) and an increase in comorbid substance abuse, suicidality and aggression. These problems are particularly pronounced in comorbidity with borderline personality disorder. Comorbidity with antisocial personality disorder elicits a similar spectrum of difficulties; some of the antisocial behavior exhibited by patients with this comorbidity is mediated by increased impulsivity.

  16. The role of sleep in bipolar disorder

    Directory of Open Access Journals (Sweden)

    Gold AK

    2016-06-01

    Full Text Available Alexandra K Gold,1 Louisa G Sylvia,1,2 1Department of Psychiatry, Massachusetts General Hospital, 2Harvard Medical School, Boston, MA, USA Abstract: Bipolar disorder is a serious mental illness characterized by alternating periods of elevated and depressed mood. Sleep disturbances in bipolar disorder are present during all stages of the condition and exert a negative impact on overall course, quality of life, and treatment outcomes. We examine the partnership between circadian system (process C functioning and sleep–wake homeostasis (process S on optimal sleep functioning and explore the role of disruptions in both systems on sleep disturbances in bipolar disorder. A convergence of evidence suggests that sleep problems in bipolar disorder result from dysregulation across both process C and process S systems. Biomarkers of depressive episodes include heightened fragmentation of rapid eye movement (REM sleep, reduced REM latency, increased REM density, and a greater percentage of awakenings, while biomarkers of manic episodes include reduced REM latency, greater percentage of stage I sleep, increased REM density, discontinuous sleep patterns, shortened total sleep time, and a greater time awake in bed. These findings highlight the importance of targeting novel treatments for sleep disturbance in bipolar disorder. Keywords: bipolar disorder, circadian rhythms, sleep–wake homeostasis

  17. Classification of cognitive performance in bipolar disorder.

    Science.gov (United States)

    Sparding, Timea; Silander, Katja; Pålsson, Erik; Östlind, Josefin; Ekman, Carl Johan; Sellgren, Carl M; Joas, Erik; Hansen, Stefan; Landén, Mikael

    2017-09-01

    To understand the etiology of cognitive impairment associated with bipolar disorder, we need to clarify potential heterogeneity in cognitive functioning. To this end, we used multivariate techniques to study if the correlation structure of cognitive abilities differs between persons with bipolar disorder and controls. Clinically stable patients with bipolar disorder (type I: n = 64; type II: n = 44) and healthy controls (n = 86) were assessed with a wide range of cognitive tests measuring executive function, speed, memory, and verbal skills. Data were analysed with multivariate techniques. A distinct subgroup (∼30%) could be identified that performed significantly poorer on tests concerning memory function. This cognitive phenotype subgroup did not differ from the majority of bipolar disorder patients with respect to other demographic or clinical characteristics. Whereas the majority of patients performed similar to controls, a subgroup of patients with bipolar disorder differed substantially from healthy controls in the correlation pattern of low-level cognitive abilities. This suggests that cognitive impairment is not a general trait in bipolar disorder but characteristic of a cognitive subgroup. This has important clinical implications for cognitive rehabilitation and remediation.

  18. O transtorno bipolar na mulher Bipolar disorder in women

    Directory of Open Access Journals (Sweden)

    Alexandro de Borja Gonçalves Guerra

    2005-01-01

    Full Text Available Diferenças sexuais, descritas em vários transtornos psiquiátricos, também parecem estar presentes no transtorno afetivo bipolar (TAB. A prevalência do TAB tipo I se distribui igualmente entre mulheres e homens. Mulheres parecem estar sujeitas a um risco maior de ciclagem rápida e mania mista, condições que fariam do TAB um transtorno com curso mais prejudicial no sexo feminino. Uma diátese depressiva mais marcante, uso excessivo de antidepressivos e diferenças hormonais surgem como hipóteses para explicar essas diferenças fenomenológicas, apesar das quais, mulheres e homens parecem responder igualmente ao tratamento medicamentoso. A indicação de anticonvulsivantes como primeira escolha em mulheres é controversa, a não ser para o tratamento da mania mista e, talvez, da ciclagem rápida. O tratamento do TAB na gravidez deve levar em conta tanto os riscos de exposição aos medicamentos quanto à doença materna. A profilaxia do TAB no puerpério está fortemente indicada em decorrência do grande risco de recorrência da doença nesse período. Embora, de modo geral, as medicações psicotrópicas estejam contra-indicadas durante a amamentação, entre os estabilizadores do humor, a carbamazepina e o valproato são mais seguros do que o lítio. Mais estudos são necessários para a confirmação das diferenças de curso do TAB entre mulheres e homens e a investigação de possíveis diferenças na efetividade dos tratamentos.Gender differences, described in several psychiatric disorders, seem to be also present in bipolar disorder (BD. The prevalence of bipolar I disorder is equally distributed between women and men. Women seem to be at higher risk for rapid cycling and mixed mania, conditions that could make BD a disorder with a more severe course in the female sex. A marked depressive diathesis among women, greatest use of antidepressants and hormonal differences have been mentioned as hypotheses to explain these

  19. Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

    Science.gov (United States)

    Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

    2015-04-08

    Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

  20. Two-dimensional dopant profiling for shallow junctions by TEM and AFM

    International Nuclear Information System (INIS)

    Yoo, K.

    2000-01-01

    The present work concerns the development of the Etch/TEM and Etch/AFM methods to obtain quantitative 2-D dopant profiles for the ultra shallow p-n junctions of the next generation of metal-oxide-semiconductor field effect transistors (MOSFETs). For these methods, thin foil (TEM) or bulk (AFM) cross-sectional specimens were etched using a dopant selective chemical so that local areas of the dopant implanted source/drain (S/D) regions were etched to different depths. The surface topography of the S/D regions was determined from the thickness fringes for the TEM method and by the direct measurement for the AFM method. The local etched depths were converted to etch rates, and these were then converted to corresponding 1-D and 2-D dopant profiles by the experimentally independent etch rate calibration curves. Shallow junction MOSFET samples were designed and fabricated with junction depths 60nm (n + /p), 80nm (n + /p) and 120nm (p + /n) using 0.25μm process technology. A new method using SOG (Spin-on-Glass) contributed to the high quality XTEM thin foil specimens. Controlled stirring of the etchant increased the dopant concentration selectivity and etching consistency. Computer modelling simulated the isotropic etching behaviours, which can introduce the significant error in dopant profiling for shallow and abrupt junction samples. Comprehensive quantitative results enabled the optimum etching time to be determined for the first time. Etch/TEM method gave 1-D dopant profiles that showed good agreement with 1-D Spreading Resistance Probe (SRP) dopant profiles for determining junction depths. 2-D dopant profiles gave L eff , i.e. the shortest lateral distance between the S/D junctions, of major importance for MOSFET performance. Values for L eff of 161, 159 and 123nm were determined from 60, 80 and 120nm junction depth samples respectively, compared with the 215nm MOSFET gate length. The resolution and accuracy of the Etch/TEM method are estimated as 2 and 10nm