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Sample records for bioelectronic silicon nanowire

  1. Advances in nanowire bioelectronics

    Science.gov (United States)

    Zhou, Wei; Dai, Xiaochuan; Lieber, Charles M.

    2017-01-01

    Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energy. In this review article, we summarize recent progress in the field of nanowire bioelectronics with a focus primarily on silicon nanowire field-effect transistor biosensors. First, the synthesis and assembly of semiconductor nanowires will be described, including the basics of nanowire FETs crucial to their configuration as biosensors. Second, we will introduce and review recent results in nanowire bioelectronics for biomedical applications ranging from label-free sensing of biomolecules, to extracellular and intracellular electrophysiological recording.

  2. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry (Conference Presentation)

    Science.gov (United States)

    Carrad, Damon J.; Mostert, Bernard; Meredith, Paul; Micolich, Adam P.

    2016-09-01

    A key task in bioelectronics is the transduction between ionic/protonic signals and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics. We present our work on a new class of organic-inorganic transducing interface utilising semiconducting InAs and GaAs nanowires directly gated with a proton transporting hygroscopic polymer consisting of undoped polyethylene oxide (PEO) patterned to nanoscale dimensions by a newly developed electron-beam lithography process [1]. Remarkably, we find our undoped PEO polymer electrolyte gate dielectric [2] gives equivalent electrical performance to the more traditionally used LiClO4-doped PEO [3], with an ionic conductivity three orders of magnitude higher than previously reported for undoped PEO [4]. The observed behaviour is consistent with proton conduction in PEO. We attribute our undoped PEO-based devices' performance to the small external surface and high surface-to-volume ratio of both the nanowire conducting channel and patterned PEO dielectric in our devices, as well as the enhanced hydration afforded by device processing and atmospheric conditions. In addition to studying the basic transducing mechanisms, we also demonstrate high-fidelity ionic to electronic conversion of a.c. signals at frequencies up to 50 Hz. Moreover, by combining complementary n- and p-type transducers we demonstrate functional hybrid ionic-electronic circuits can achieve logic (NOT operation), and with some further engineering of the nanowire contacts, potentially also amplification. Our device structures have significant potential to be scaled towards realising integrated bioelectronic circuitry. [1] D.J. Carrad et al., Nano Letters 14, 94 (2014). [2] D.J. Carrad et al., Manuscript in preparation (2016). [3] S.H. Kim et al., Advanced Materials 25, 1822 (2013). [4] S.K. Fullerton-Shirey et al., Macromolecules 42, 2142 (2009).

  4. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  5. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  6. Silicon nanowires as intracellular devices

    Science.gov (United States)

    Zimmerman, John F.

    Semiconductor nanowire devices are an exciting class of materials for biomedical and electrophysiology applications, with current studies primarily delivering substrate bound devices through mechanical abrasion or electroporation. However, the ability to distribute these devices in a drug-like fashion is an important step in developing next-generation active therapeutic devices. In this work, we will discuss the interaction of label free Silicon nanowires (SiNWs) with cellular systems, showing that they can be internalized in multiple cell lines, and undergo an active 'burst-like' transport process. (Abstract shortened by ProQuest.).

  7. Core-shell silicon nanowire solar cells.

    Science.gov (United States)

    Adachi, M M; Anantram, M P; Karim, K S

    2013-01-01

    Silicon nanowires can enhance broadband optical absorption and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown by vapor-liquid-solid method are attractive because they can be grown on low-cost substrates such as glass, and are large area compatible. Here, we experimentally demonstrate that an array of disordered silicon nanowires surrounded by a thin transparent conductive oxide has both low diffuse and specular reflection with total values as low as nanowire facilitates enhancement in external quantum efficiency using two different active shell materials: amorphous silicon and nanocrystalline silicon. As a result, the core-shell nanowire device exhibits a short-circuit current enhancement of 15% with an amorphous Si shell and 26% with a nanocrystalline Si shell compared to their corresponding planar devices.

  8. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher;

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion and propa......The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...... and propagation loss silicon nanowires and use them to demonstrate the broadband capabilities of silicon....

  9. Synthesis of silicon and germanium nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

    2007-11-01

    The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

  10. Superconductive silicon nanowires using gallium beam lithography.

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  11. Silicon nanowire properties from theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Scheel, H.M.

    2007-09-10

    Silicon has played an outstanding role at the end of the 20th century and is still one of the most important components for micro computing. In recent years the ability to miniaturize semiconductor structures and devices to nanometer length scales has opened an all new field of physics, i.e. nanoscience. Simply by miniaturizing the size of semiconducting structures the physics describing electronic or vibronic properties has to be altered fundamentally leading to new phenomena and interesting effects. For silicon the two major mile-stones where the fabrication of porous silicon and later the fabrication of free-standing silicon nanowires. The intense research concerning the fabrication of silicon nanowires has led to single crystalline nanowires with diameters of only a few nanometers. The hope that drove these intense research efforts where to find efficient photonic properties in these quantized systems. In the first part of this work detailed theoretical investigations are presented for the commonly observed ([111] and [11 anti 2]) representatives of free-standing and for the most frequently discussed ([001]) silicon nanowires not (so far) observed as free standing wires. Using density functional theory in the local density approximation the electronic properties as well as the structural changes due to the reduced dimensionality of silicon nanowires are calculated and discussed. The comparison to recent experimental, scanning tunneling experiments reveal a fundamental discrepancy between the calculated band structures and experimental findings. With our results we are able to explain these differences. Raman investigations on silicon nanowires where in a state of controversial discussion about the origin of observed red shifted spectra. Various contributions like quantum confinement, photo excitation and thermal effects where discussed. The second part of this thesis contributes to this discussion, with detailed laser power dependent Raman spectroscopic

  12. Thermal stability of silicon nanowires:atomistic simulation study

    Institute of Scientific and Technical Information of China (English)

    Liu Wen-Liang; Zhang Kai-Wang; Zhong Jian-Xin

    2009-01-01

    Using the Stillinger-Weber (SW) potential model, we investigate the thermal stability of pristine silicon nanowires based on classical molecular dynamics (MD) simulations. We explore the structural evolutions and the Lindemann indices of silicon nanowires at different temperatures in order to unveil atomic-level melting behaviour of silicon nanowires.The simulation results show that silicon nanowires with surface reconstructions have higher thermal stability than those without surface reconstructions, and that silicon nanowires with perpendicular dimmer rows on the two (100) surfaces have somewhat higher thermal stability than nanowires with parallel dimmer rows on the two (100) surfaces. Furthermore, the melting temperature of silicon nanowires increases as their diameter increases and reaches a saturation value close to the melting temperature of bulk silicon. The value of the Lindemann index for melting silicon nanowires is 0.037.

  13. Mechanical Properties of Crystalline Silicon Carbide Nanowires.

    Science.gov (United States)

    Zhang, Huan; Ding, Weiqiang; Aidun, Daryush K

    2015-02-01

    In this paper, the mechanical properties of crystalline silicon carbide nanowires, synthesized with a catalyst-free chemical vapor deposition method, were characterized with nanoscale tensile testing and mechanical resonance testing methods inside a scanning electron microscope. Tensile testing of individual silicon carbide nanowire was performed to determine the tensile properties of the material including the tensile strength, failure strain and Young's modulus. The silicon carbide nanowires were also excited to mechanical resonance in the scanning electron microscope vacuum chamber using mechanical excitation and electrical excitation methods, and the corresponding resonance frequencies were used to determine the Young's modulus of the material according to the simple beam theory. The Young's modulus values from tensile tests were in good agreement with the ones obtained from the mechanical resonance tests.

  14. Piezoresistance measurement on single crystal silicon nanowires

    Science.gov (United States)

    Toriyama, Toshiyuki; Funai, Daisuke; Sugiyama, Susumu

    2003-01-01

    A p-type single crystal silicon nanowire bridge and a four-terminal nanowire element were fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the usefulness of these sensing elements as mechanical sensors. The longitudinal piezoresistance coefficient πl[110] was found to be 38.7×10-11 Pa-1 at a surface impurity concentration of Ns=9×1019cm-3 for the nanowire bridge. The shear piezoresistance coefficient π44 was found to be 77.4×10-11 Pa-1 at Ns=9×1019 cm-3 for the four-terminal nanowire element. These values are 54.8% larger than the values obtained from p+ diffused piezoresistors, which are used in conventional mechanical sensors.

  15. Silicon nanowire field-effect chemical sensor

    NARCIS (Netherlands)

    Chen, Songyue

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing”, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A nove

  16. Abnormal Raman spectral phenomenon of silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The Raman spectra of two one-dimensional silicon nanowire samples with different excitation wavelengths were measured and an abnormal phenomenon was discovered that the Raman spectral features change with the wavelengths of excitation. Closer analysis of the crystalline structure of samples and the changes in Raman spectral features showed that the abnormal behavior is the result of resonance Raman scattering selection effect.

  17. Carbon nanofiber-filled conductive silicone elastomers as soft, dry bioelectronic interfaces

    CERN Document Server

    Slipher, G A; Mrozek, R A

    2016-01-01

    Soft and pliable conductive polymer composites hold promise for application as bioelectronic interfaces such as for electroencephalography (EEG). In clinical, laboratory, and real-world EEG there is a desire for dry, soft, and comfortable interfaces to the scalp that are capable of relaying the microvolt-level scalp potentials to signal processing electronics. A key challenge is that most material approaches are sensitive to deformation-induced shifts in electrical impedance associated with decreased signal-to-noise ratio. This is a particular concern in real-world environments where human motion is present. The entire set of brain information outside of tightly controlled laboratory or clinical settings are currently unobtainable due to this challenge. Here we explore the performance of an elastomeric material solution purposefully designed for dry, soft, comfortable scalp contact electrodes for EEG that is specifically targeted to have flat electrical impedance response to deformation to enable utilization ...

  18. Tapered silicon nanowires for enhanced nanomechanical sensing

    Science.gov (United States)

    Malvar, O.; Gil-Santos, E.; Ruz, J. J.; Ramos, D.; Pini, V.; Fernandez-Regulez, M.; Calleja, M.; Tamayo, J.; San Paulo, A.

    2013-07-01

    We investigate the effect of controllably induced tapering on the resonant vibrations and sensing performance of silicon nanowires. Simple analytical expressions for the resonance frequencies of the first two flexural modes as a function of the tapering degree are presented. Experimental measurements of the resonance frequencies of singly clamped nanowires are compared with the theory. Our model is valid for any nanostructure with tapered geometry, and it predicts a reduction beyond two orders of magnitude of the mass detection limit for conical resonators as compared to uniform beams with the same length and diameter at the clamp.

  19. Growth of Silicon Nanowires by Heating Si Substrate

    Institute of Scientific and Technical Information of China (English)

    邢英杰; 奚中和; 俞大鹏; 杭青岭; 严涵斐; 冯孙齐; 薛增泉

    2002-01-01

    Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an Ni (or Au) catalyst. The nanowires have a diameter of 10 - 40nm and a length of up to several tens of micrometres.Unlike the well-known vapour-liquid-solid mechanism, a solid-liquid-solid mechanism appeared to control the nanowire growth. The heating process had a strong influence on the growth of silicon nanowires. It was found that ambient gas was necessary to grow nanowires. This method can be used to prepare other kinds of nanowires.

  20. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  1. Selective surface functionalization of silicon nanowires via nanoscale joule heating.

    Science.gov (United States)

    Park, Inkyu; Li, Zhiyong; Pisano, Albert P; Williams, R Stanley

    2007-10-01

    In this letter, we report a novel approach to selectively functionalize the surface of silicon nanowires located on silicon-based substrates. This method is based upon highly localized nanoscale Joule heating along silicon nanowires under an applied electrical bias. Numerical simulation shows that a high-temperature (>800 K) with a large thermal gradient can be achieved by applying an appropriate electrical bias across silicon nanowires. This localized heating effect can be utilized to selectively ablate a protective polymer layer from a region of the chosen silicon nanowire. The exposed surface, with proper postprocessing, becomes available for surface functionalization with chemical linker molecules, such as 3-mercaptopropyltrimethoxysilanes, while the surrounding area is still protected by the chemically inert polymer layer. This approach is successfully demonstrated on silicon nanowire arrays fabricated on SOI wafers and visualized by selective attachment of gold nanoparticles.

  2. The collagen assisted self-assembly of silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salhi, Billel; Vaurette, Francois; Grandidier, Bruno; Stievenard, Didier [IEMN, UMR8520, Department ISEN, 41 Boulevard Vauban, 59046 Lille Cedex (France); Melnyk, Oleg [IBL, UMR8161, Institut Pasteur de Lille, Universite de Lille Nord de France, 1 rue du Professeur Calmette, 59021 Lille (France); Coffinier, Yannick; Boukherroub, Rabah [IRI, USR3078, c/o IEMN, Cite Scientifique, BP60069, 59652 Villeneuve d' Ascq (France)], E-mail: didier.stievenard@isen.iemn.univ-lille1.fr

    2009-06-10

    The paper reports on self-assembly of silicon nanowire junctions assisted by protocollagen, a low cost soluble long fiber protein and precursor of collagen fibrils. First, the collagen was combed on an octadecyl-terminated silicon surface with gold electrodes. Then the combed surface was exposed to an aqueous suspension of silicon nanowires. In order to increase electrostatic interactions between the positively charged collagen and the nanowires, the nanowires were chemically modified with negatively charged sulfonate groups. The interaction of collagen with the sulfonated nanowires, which mimics the native collagen/heparin sulfate interaction, induced self-assembly of the nanowires localized between gold electrodes. The proof of concept for the formation of spontaneous electrode-nanowire-electrode junctions using collagen as a template was supported by current-voltage measurements.

  3. Silicon nanowire field effect transistor for biosensing

    Science.gov (United States)

    Chen, Yu

    Detection and recognition of chemical ions and biological molecules are important in basic science as well as in pharmacology and medicine. Nanotechnology has made it possible to greatly enhance detection sensitivity through the use of nanowires, nanotubes, nanocrystals, nanocantilevers, and quantum dots as sensing platforms. In this work silicon nanowires are used as the conductance channel between the source and drain of a FET (field effect transistor) device and the biomolecular binding on the surface of nanowire modifies the conductance like a change in gate voltage. Due to the high surface-to-volume ratio and unique character of the silicon nanowires, this device has significant advantages in real-time, label-free and highly sensitive detection of a wide range of species, including proteins, nucleic acids and other small molecules. Here we present a biosensor fabricated from CMOS (complementary metal-oxide-semiconductor) compatible top-down methods including electron beam lithography. This method enables scalable manufacturing of multiple sensor arrays with high efficiency. In a systematic study of the device characteristics with different wire widths, we have found the sensitivity of the device increases when wire width decreases. By operating the device in appropriate bias region, the sensitivity of the device can be improved without doping or high temperature annealing. Not only can this device be used to detect the concentration of proteins and metabolites like urea or glucose, but also dynamic information like the dissociation constant can be extracted from the measurement. The device is also used to detect the clinically related cancer antigen CA 15.3 and shows potential application in cancer studies.

  4. Increasing the efficiency of polymer solar cells by silicon nanowires.

    Science.gov (United States)

    Eisenhawer, B; Sensfuss, S; Sivakov, V; Pietsch, M; Andrä, G; Falk, F

    2011-08-05

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  5. Silicon Nanowires with MoSx and Pt as Electrocatalysts for Hydrogen Evolution Reaction

    Directory of Open Access Journals (Sweden)

    S. H. Hsieh

    2016-01-01

    Full Text Available A convenient method was used for synthesizing Pt-nanoparticle/MoSx/silicon nanowires nanocomposites. Obtained Pt-MoSx/silicon nanowires electrocatalysts were characterized by transmission electron microscopy (TEM. The hydrogen evolution reaction efficiency of the Pt-MoSx/silicon nanowire nanocomposite catalysts was assessed by examining polarization and electrolysis measurements under solar light irradiations. The electrochemical characterizations demonstrate that Pt-MoSx/silicon nanowire electrodes exhibited an excellent catalytic activity for hydrogen evolution reaction in an acidic electrolyte. The hydrogen production capability of Pt-MoSx/silicon nanowires is also comparable to MoSx/silicon nanowires and Pt/silicon nanowires. Electrochemical impedance spectroscopy experiments suggest that the enhanced performance of Pt-MoSx/silicon nanowires can be attributed to the fast electron transfer between Pt-MoSx/silicon nanowire electrodes and electrolyte interfaces.

  6. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  7. Full process for integrating silicon nanowire arrays into solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Perraud, Simon; Poncet, Severine; Noel, Sebastien; Levis, Michel; Faucherand, Pascal; Rouviere, Emmanuelle [CEA, LITEN, Laboratoire des Composants pour la Recuperation d' Energie, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Thony, Philippe; Jaussaud, Claude; Delsol, Regis [CEA, LITEN, Laboratoire des Composants Solaires, INES-RDI, Savoie Technolac, 50 avenue du Lac Leman, 73377 Le-Bourget-du-Lac (France)

    2009-09-15

    A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour-liquid-solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical-mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100 mW/cm{sup 2}, our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects. (author)

  8. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

    Science.gov (United States)

    Hainey, Mel F.; Redwing, Joan M.

    2016-12-01

    Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

  9. Photoresponsive properties of ultrathin silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes Campus, MM Bldg., Mawson Lakes Blvd., Mawson Lakes, South Australia 5095 (Australia); Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 2.4v Bldg., Wilhelm-Johnen St., Jülich 52428 (Germany)

    2014-12-08

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10{sup 4 }A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  10. High pressure Raman scattering of silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Khachadorian, Sevak; Scheel, Harald; Thomsen, Christian [Institut fuer Festkoerperphysik, Technische Universitaet Berlin, 10623 Berlin (Germany); Papagelis, Konstantinos [Materials Science Department, University of Patras, 26504 Patras (Greece); Colli, Alan [Nokia Research Centre, 21 J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Ferrari, Andrea C, E-mail: khachadorian@physik.tu-berlin.de [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom)

    2011-05-13

    We study the high pressure response, up to 8 GPa, of silicon nanowires (SiNWs) with {approx} 15 nm diameter, by Raman spectroscopy. The first order Raman peak shows a superlinear trend, more pronounced compared to bulk Si. Combining transmission electron microscopy and Raman measurements we estimate the SiNWs' bulk modulus and the Grueneisen parameters. We detect an increase of Raman linewidth at {approx} 4 GPa, and assign it to pressure induced activation of a decay process into LO and TA phonons. This pressure is smaller compared to the {approx} 7 GPa reported for bulk Si. We do not observe evidence of phase transitions, such as discontinuities or change in the pressure slopes, in the investigated pressure range.

  11. Growth model of lantern-like amorphous silicon oxide nanowires

    Science.gov (United States)

    Wu, Ping; Zou, Xingquan; Chi, Lingfei; Li, Qiang; Xiao, Tan

    2007-03-01

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO2 and active carbon at 1000 °C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 µm. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiOx nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  12. Growth model of lantern-like amorphous silicon oxide nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wu Ping; Zou Xingquan; Chi Lingfei; Li Qiang; Xiao Tan [Department of Physics, Shantou University, Shantou 515063 (China)

    2007-03-28

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO{sub 2} and active carbon at 1000 deg. C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 {mu}m. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiO{sub x} nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  13. High-performance silicon nanowire bipolar phototransistors

    Science.gov (United States)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  14. Ultralow thermal conductivity in Electrolessly Etched (EE) Silicon Nanowires

    Science.gov (United States)

    Hippalgaonkar, Kedar; Chen, Renkun; Budaev, Bair; Tang, Jinyao; Andrews, Sean; Murphy, Padraig; Mukerjee, Subroto; Moore, Joel; Yang, Peidong; Majumdar, Arun

    2009-03-01

    EE process produces single-crystalline Silicon nanowires with rough walls. We use suspended structures to directly compute the heat transfer through single nanowires. Nanowires with diameters less than the mean free path of phonons impede transport by boundary scattering. The roughness acts as a secondary scattering mechanism to further reduce phonon transport. By controlling the amount of roughness it is possible to push limits to the extent that nanowire conductance close to quanta of thermal conductance,πkB^2 T / πkB^2 T 6 . - 6 is observed. Traditionally, the lower limit of conductivity is amorphous Silicon at 1 W/mK at room temperature. The measured conductivity of our nanostructures challenges even this amorphous limit pointing towards previously unstudied mechanisms of thermal resistance. We measure thermal conductivity of ˜150nm diameter EE wires to be ˜1 W/mK.

  15. Scattering cross section of metal catalyst atoms in silicon nanowires

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, R.; Cartoixa, X.

    2010-01-01

    A common technique to fabricate silicon nanowires is to use metal particles (e.g., Au, Ag, Cu, Al) to catalyze the growth reaction. As a consequence, the fabricated nanowires contain small concentrations of these metals as impurities. In this work we investigate the effect of the metallic...... strength of the different metal atoms. We find that Au, Ag, and Cu impurities have very similar scattering cross sections, while Al differs from the rest. Impurities located in the center of the wires scatter significantly more than impurities close to or at the surface. The results for nanowires...

  16. Multi-diameter silicon nanowires: Fabrication, characterization, and modeling

    Science.gov (United States)

    Alagoz, Arif Sinan

    Nanotechnology is a rapidly expanding interdisciplinary field offering novel devices for broad range of applications. Quantum effects and surface to volume ratio of nanostructures are strongly size dependent, and redefine material properties at nanoscale. Silicon is one of the most promising materials for next generation nanostructured transistors, photonics devices, Li-ion batteries, photovoltaic solar cells, and thermoelectric energy generators. Since electrical, optical, and mechanical properties of nanostructures strongly depend on their shape, size, periodicity, and crystal structure; it is crucial to control these parameters in order to optimize device performance for targeted applications. This dissertation is intended to develop a low-cost, low-temperature, high-throughput, and large-area nanowire fabrication method that can produce well-ordered arrays of hierarchical single-crystal silicon nanowires at large scale by using nanosphere lithography and metal-assisted chemical etching. Nanowire morphology was characterized by using scanning electron microscope and optical properties of nanowire arrays were modeled with the help of finite-difference-time domain method. These novel multi-diameter silicon nanowire arrays have the potential applications in many fields including but not limited to next generation nanowire solar cells to field ionization gas sensors.

  17. Surface functionalization of HF-treated silicon nanowires

    Indian Academy of Sciences (India)

    Ming-Wang Shao; Hong Wang; Yan Fu; Jun Hua; Dorothy-Duo-Duo Ma

    2009-05-01

    Versatile methods were employed to investigate the chemical reactivity of hydrogenterminated surface of silicon nanowires. The experimental results showed that coupling reaction took place when silicon nanowires reacted with 2,2,2-trifluoroethyl acrylate, and reductive deposition reaction occurred in the presence of inorganic salt such as HgCl2, and also co-reduction reaction took place in a solution containing both AuCl3 and PdCl2. The possible reaction mechanisms were studied and this study would be expected to favour the homogeneity, selectivity, reproducibility, and stability of SiNW devices or sensors.

  18. Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

    Directory of Open Access Journals (Sweden)

    Arancha Gómez-Martínez

    2014-01-01

    Full Text Available Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

  19. Rational defect introduction in silicon nanowires.

    Science.gov (United States)

    Shin, Naechul; Chi, Miaofang; Howe, Jane Y; Filler, Michael A

    2013-05-08

    The controlled introduction of planar defects, particularly twin boundaries and stacking faults, in group IV nanowires remains challenging despite the prevalence of these structural features in other nanowire systems (e.g., II-VI and III-V). Here we demonstrate how user-programmable changes to precursor pressure and growth temperature can rationally generate both transverse twin boundaries and angled stacking faults during the growth of oriented Si nanowires. We leverage this new capability to demonstrate prototype defect superstructures. These findings yield important insight into the mechanism of defect generation in semiconductor nanowires and suggest new routes to engineer the properties of this ubiquitous semiconductor.

  20. Coaxial silicon nanowires as solar cells and nanoelectronic power sources.

    Science.gov (United States)

    Tian, Bozhi; Zheng, Xiaolin; Kempa, Thomas J; Fang, Ying; Yu, Nanfang; Yu, Guihua; Huang, Jinlin; Lieber, Charles M

    2007-10-18

    Solar cells are attractive candidates for clean and renewable power; with miniaturization, they might also serve as integrated power sources for nanoelectronic systems. The use of nanostructures or nanostructured materials represents a general approach to reduce both cost and size and to improve efficiency in photovoltaics. Nanoparticles, nanorods and nanowires have been used to improve charge collection efficiency in polymer-blend and dye-sensitized solar cells, to demonstrate carrier multiplication, and to enable low-temperature processing of photovoltaic devices. Moreover, recent theoretical studies have indicated that coaxial nanowire structures could improve carrier collection and overall efficiency with respect to single-crystal bulk semiconductors of the same materials. However, solar cells based on hybrid nanoarchitectures suffer from relatively low efficiencies and poor stabilities. In addition, previous studies have not yet addressed their use as photovoltaic power elements in nanoelectronics. Here we report the realization of p-type/intrinsic/n-type (p-i-n) coaxial silicon nanowire solar cells. Under one solar equivalent (1-sun) illumination, the p-i-n silicon nanowire elements yield a maximum power output of up to 200 pW per nanowire device and an apparent energy conversion efficiency of up to 3.4 per cent, with stable and improved efficiencies achievable at high-flux illuminations. Furthermore, we show that individual and interconnected silicon nanowire photovoltaic elements can serve as robust power sources to drive functional nanoelectronic sensors and logic gates. These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.

  1. Solar power conversion efficiency in modulated silicon nanowire photonic crystals

    Science.gov (United States)

    Deinega, Alexei; John, Sajeev

    2012-10-01

    It is suggested that using only 1 μm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power conversion efficiency in the range of 15%-20% can be achieved. Choosing a specific modulation profile provides antireflection, light trapping, and back-reflection over broad angles in targeted spectral regions for high efficiency power conversion without solar tracking. Solving both Maxwell's equations in the 3D photonic crystal and the semiconductor drift-diffusion equations in each nanowire, we identify optimal junction and contact geometries and study the influence of the nanowire surface curvature on solar cell efficiency. We demonstrate that suitably modulated nanowires enable 20% efficiency improvement over their straight counterparts made of an equivalent amount of silicon. We also discuss the efficiency of a tandem amorphous and crystalline silicon nanowire photonic crystal solar cell. Opportunities for "hot carrier" collection and up-conversion of infrared light, enhanced by photonic crystal geometry, facilitate further improvements in power efficiency.

  2. Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 陆梅; 孔令斌; 王成伟; 郭新勇; 力虎林

    2002-01-01

    Composite arrays of multi-wall carbon nanotubes (MWNTs) and silicon nanowires (SiNWs) are fabricated by means of the chemical vapour deposition method in porous anodic aluminium oxide (AAO) templates. The results of the scanning electron microscopy, high-resolution transmission electron microscopy, and transmission electron microscopy have shown that SiNWs are successful nested or filled in the hollow cavities of synthesized MWNT arrays in AAO templates to form MWNT-SiNW composite arrays. The photoluminescence (PL) intensity degradation and a blueshift of PL peak position, usually created from the chemical instability of the SiNW surfaces, are decreased and eliminated clearly in the composite arrays. The composite arrays of MWNTs-SiNWs exhibit more enhanced intensity and stability of PL performance than the SiNW arrays deposited in AAO templates.

  3. Joule-assisted silicidation for short-channel silicon nanowire devices.

    Science.gov (United States)

    Mongillo, Massimo; Spathis, Panayotis; Katsaros, Georgios; Gentile, Pascal; Sanquer, Marc; De Franceschi, Silvano

    2011-09-27

    We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-silicide devices with controlled silicon channel length down to 8 nm.

  4. Sub-diffraction Laser Synthesis of Silicon Nanowires

    Science.gov (United States)

    Mitchell, James I.; Zhou, Nan; Nam, Woongsik; Traverso, Luis M.; Xu, Xianfan

    2014-01-01

    We demonstrate synthesis of silicon nanowires of tens of nanometers via laser induced chemical vapor deposition. These nanowires with diameters as small as 60 nm are produced by the interference between incident laser radiation and surface scattered radiation within a diffraction limited spot, which causes spatially confined, periodic heating needed for high resolution chemical vapor deposition. By controlling the intensity and polarization direction of the incident radiation, multiple parallel nanowires can be simultaneously synthesized. The nanowires are produced on a dielectric substrate with controlled diameter, length, orientation, and the possibility of in-situ doping, and therefore are ready for device fabrication. Our method offers rapid one-step fabrication of nano-materials and devices unobtainable with previous CVD methods.

  5. H2 sensing properties of modified silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    Latefa Baba Ahmed; Sabrina Naama; Aissa Keffous; Abdelkader Hassein-Bey; Toufik Hadjersi

    2015-01-01

    It has been found that the silicon nanowires modified with noble metals can be used to fabricate an effective H2 gas sensor in the present study. The preparation and surface modification of silicon nanowires (SiNWs) were carried out by chemical methods. The morphology of the silicon nanowires unmodified and modified with nanoparticles of platinum, palladium, silver and gold was investigated using scanning electron microscopy (SEM). The chemical composition of the silicon nanowire layers was studied by secondary ion mass spectroscopy (SIMS) and energy dispersive X-ray analysis (EDX). The structures of type metal/SiNWs/p-Si/Al were fabricated. The electrical characterization (I–V) was performed in primary vacuum and H2 at different concentrations. It was found that the metal type used to modify the SiNWs strongly influenced the I–V characteristics. The response of these structures toward H2 gas was studied as a function of the metal type. Finally, the sensing characteristics and performance of the sensors were investigated.

  6. Transport in Silicon Nanowires: Role of Radial Dopant Profile

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, Riccardo; Jauho, Antti-Pekka;

    2008-01-01

    We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different dist...

  7. Silicon nanowire device and method for its manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Okandan, Murat; Draper, Bruce L.; Resnick, Paul J.

    2017-01-03

    There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.

  8. The diameter-dependent photoelectrochemical performance of silicon nanowires.

    Science.gov (United States)

    Zhang, Bing-Chang; Wang, Hui; He, Le; Duan, Chun-Yang; Li, Fan; Ou, Xue-Mei; Sun, Bao-Quan; Zhang, Xiao-Hong

    2016-01-25

    We demonstrate the first systematic study of the diameter-dependent photoelectrochemical performance of single silicon nanowires within a broad size range from 200 to 2000 nm. SiNWs with a diameter of 1415 nm exhibit the highest solar energy conversion efficiency, which can be mainly traced to their diameter-dependent light absorption properties.

  9. H2 sensing properties of modified silicon nanowires

    Directory of Open Access Journals (Sweden)

    Latefa Baba Ahmed

    2015-04-01

    Full Text Available It has been found that the silicon nanowires modified with noble metals can be used to fabricate an effective H2 gas sensor in the present study. The preparation and surface modification of silicon nanowires (SiNWs were carried out by chemical methods. The morphology of the silicon nanowires unmodified and modified with nanoparticles of platinum, palladium, silver and gold was investigated using scanning electron microscopy (SEM. The chemical composition of the silicon nanowire layers was studied by secondary ion mass spectroscopy (SIMS and energy dispersive X-ray analysis (EDX. The structures of type metal/SiNWs/p-Si/Al were fabricated. The electrical characterization (I–V was performed in primary vacuum and H2 at different concentrations. It was found that the metal type used to modify the SiNWs strongly influenced the I–V characteristics. The response of these structures toward H2 gas was studied as a function of the metal type. Finally, the sensing characteristics and performance of the sensors were investigated.

  10. Silicon-nanowire based attachment of silicon chips for mouse embryo labelling.

    Science.gov (United States)

    Durán, S; Novo, S; Duch, M; Gómez-Martínez, R; Fernández-Regúlez, M; San Paulo, A; Nogués, C; Esteve, J; Ibañez, E; Plaza, J A

    2015-03-21

    The adhesion of small silicon chips to cells has many potential applications as direct interconnection of the cells to the external world can be accomplished. Hence, although some typical applications of silicon nanowires integrated into microsystems are focused on achieving a cell-on-a-chip strategy, we are interested in obtaining chip-on-a-cell systems. This paper reports the design, technological development and characterization of polysilicon barcodes featuring silicon nanowires as nanoscale attachment to identify and track living mouse embryos during their in vitro development. The chips are attached to the outer surface of the Zona Pellucida, the cover that surrounds oocytes and embryos, to avoid the direct contact between the chip and the embryo cell membrane. Two attachment methodologies, rolling and pushpin, which allow two entirely different levels of applied forces to attach the chips to living embryos, are evaluated. The former consists of rolling the mouse embryos over one barcode with the silicon nanowires facing upwards, while in the latter, the barcode is pushed against the embryo with a micropipette. The effect on in vitro embryo development and the retention rate related to the calculated applied forces are stated. Field emission scanning electron microscopy inspection, which allowed high-resolution imaging, also confirms the physical attachment of the nanowires with some of them piercing or wrapped by the Zona Pellucida and revealed extraordinary bent silicon nanowires.

  11. Organic bioelectronics in medicine.

    Science.gov (United States)

    Löffler, S; Melican, K; Nilsson, K P R; Richter-Dahlfors, A

    2017-02-09

    A major challenge in the growing field of bioelectronic medicine is the development of tissue interface technologies promoting device integration with biological tissues. Materials based on organic bioelectronics show great promise due to a unique combination of electronic and ionic conductivity properties. In this review, we outline exciting developments in the field of organic bioelectronics and demonstrate the medical importance of these active, electronically controllable materials. Importantly, organic bioelectronics offer a means to control cell-surface attachment as required for many device-tissue applications. Experiments have shown that cells readily attach and proliferate on reduced but not oxidized organic bioelectronic materials. In another application, the active properties of organic bioelectronics were used to develop electronically triggered systems for drug release. After incorporating drugs by advanced loading strategies, small compound drugs were released upon electrochemical trigger, independent of charge. Another type of delivery device was used to achieve well-controlled, spatiotemporal delivery of cationic drugs. Via electrophoretic transport within a polymer, cations were delivered with single-cell precision. Finally, organic bioelectronic materials are commonly used as electrode coatings improving the electrical properties of recording and stimulation electrodes. Because such coatings drastically reduce the electrode impedance, smaller electrodes with improved signal-to-noise ratio can be fabricated. Thus, rapid technological advancement combined with the creation of tiny electronic devices reacting to changes in the tissue environment helps to promote the transition from standard pharmaceutical therapy to treatment based on 'electroceuticals'. Moreover, the widening repertoire of organic bioelectronics will expand the options for true biological interfaces, providing the basis for personalized bioelectronic medicine.

  12. Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Wang Yan

    2010-01-01

    Full Text Available Abstract Herein, we prepare vertical and single crystalline porous silicon nanowires (SiNWs via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like porous silicon (PS, these porous nanowires also show excellent photoluminescence (PL properties. The PL intensity increases with porosity, with an enhancement of about 100 times observed in our condition experiments. A “red-shift” of the PL peak is also found. Further studies prove that the PL spectrum should be decomposed into two elementary PL bands. The peak at 850 nm is the emission of the localized excitation in the nanoporous structure, while the 750-nm peak should be attributed to the surface-oxidized nanostructure. It could be confirmed from the Fourier transform infrared spectroscopy analyses. These porous SiNW arrays may be useful as the nanoscale optoelectronic devices.

  13. Silicon nanowire arrays as learning chemical vapour classifiers

    Energy Technology Data Exchange (ETDEWEB)

    Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M, E-mail: antti.niskanen@nokia.com [Nokia Research Center, Broers Building, 21 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom)

    2011-07-22

    Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions.

  14. Heat Conductance is Strongly Anisotropic for Pristine Silicon Nanowires

    DEFF Research Database (Denmark)

    Markussen, Troels; Jauho, Antti-Pekka; Brandbyge, Mads

    2008-01-01

    We compute atomistically the heat conductance for ultrathin pristine silicon nanowires (SiNWs) with diameters ranging from 1 to 5 nm. The room temperature thermal conductance is found to be highly anisotropic: wires oriented along the 110 direction have 50−75% larger conductance than wires orient...... instead use the Tersoff empirical potential model (TEP). For the smallest wires, the thermal conductances obtained from DFT and TEP calculations agree within 10%. The presented results could be relevant for future phonon-engineering of nanowire devices....

  15. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  16. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica

    OpenAIRE

    Luo Xiaogang; Ma Wenhui; Zhou Yang; Liu Dachun; Yang Bin; Dai Yongnian

    2009-01-01

    Abstract Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core–shell structure and gr...

  17. Enhanced diode performance in cadmium telluride–silicon nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Department of Physics, Nigde University, 51240 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Akgul, Guvenc, E-mail: guvencakgul@gmail.com [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Gullu, Hasan Huseyin [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Unalan, Husnu Emrah [Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Turan, Rasit [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey)

    2015-09-25

    Highlights: • Vertically well oriented Si nanowire arrays on Si wafer were synthesized. • Semiconductor CdTe thin film/Si nanowire devices were successfully fabricated. • Optoelectronic properties of the fabricated devices were investigated. • Enhanced electrical and diode properties for the devices were observed. • The devices exhibited strong photosensitivity in near infrared region. - Abstract: We report on the structural and optoelectronic characteristics and photodetection properties of cadmium telluride (CdTe) thin film/silicon (Si) nanowire heterojunction diodes. A simple and cost-effective metal-assisted etching (MAE) method is applied to fabricate vertically oriented Si nanowires on n-type single crystalline Si wafer. Following the nanowire synthesis, CdTe thin films are directly deposited onto the Si nanowire arrays through RF magnetron sputtering. A comparative study of X-ray diffraction (XRD) and Raman spectroscopy shows the improved crystallinity of the CdTe thin films deposited onto the Si nanowires. The fabricated nanowire based heterojunction devices exhibit remarkable diode characteristics, enhanced optoelectronic properties and photosensitivity in comparison to the planar reference device. The electrical measurements revealed that the diodes have a well-defined rectifying behavior with a superior rectification ratio of 10{sup 5} at ±5 V and a relatively small ideality factor of n = 1.9 with lower reverse leakage current and series resistance at room temperature in dark condition. Moreover, an open circuit voltage of 120 mV is also observed under illumination. Based on spectral photoresponsivity measurements, the nanowire based device exhibits a distinct responsivity (0.35–0.5 A W{sup −1}) and high detectivity (6 × 10{sup 12}−9 × 10{sup 12} cm Hz{sup 1/2} W{sup −1}) in near-infrared wavelength region. The enhanced device performance and photosensitivity is believed to be due to three-dimensional nature of the interface between

  18. Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching

    Energy Technology Data Exchange (ETDEWEB)

    Fellahi, Ouarda, E-mail: fellahi_warda@yahoo.fr [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Hadjersi, Toufik [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systemes Dynamiques, Universite Ferhat Abbas de Setif (Algeria); Bouanik, Sihem; Manseri, Amar [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria)

    2010-11-01

    The morphology of silicon nanowire (SiNW) layers formed by Ag-assisted electroless etching in HF/H{sub 2}O{sub 2} solution was studied. Prior to the etching, the Ag nanoparticles were deposited on p-type Si(1 0 0) wafers by electroless metal deposition (EMD) in HF/AgNO{sub 3} solution at room temperature. The effect of etching temperature and silicon resistivity on the formation process of nanowires was studied. The secondary ion mass spectra (SIMS) technique is used to study the penetration of silver in the etched layers. The morphology of etched layers was investigated by scanning electron microscope (SEM).

  19. Synthesis and investigation of silicon carbide nanowires by HFCVD method

    Indian Academy of Sciences (India)

    S H MORTAZAVI; M GHORANNEVISS; M DADASHBABA; R ALIPOUR

    2016-08-01

    Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour deposition (HFCVD) mechanism in the temperature range of 600–800$^{\\circ}$C. Synthesis is performed under vacuum in the atmospheres of hexamethyldisiloxane/alcohol (HMDSO/C2H5OH) vapour and hydrogen (H$_2$) gas mixture. In this research dependence of SiC properties on temperature is discussed. Morphology and structural properties of SiC nanowire grown on glass substrate were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), energy diffraction spectrometer (EDX), and four-point probe (4PP). Also Mountains Map Premium (64-bit version)software is used to investigate morphological features of samples. In this context, the analysis of the motifs, depth histograms, statistical parameters, texture direction, fractal, and the peak count histograms of the nanostructuresurface of samples are carried out. According to analysis, SiC films had a good crystal quality without defects or low residual stress. We found that increasing substrate temperature increases silicon and oxygen doping amount. We also found that electrical resistivity and surface roughness increased by increasing substrate temperature. This study showed that SiC nanowires with high density grew on the free catalyst glass substrate, and the alignment of SiC nanowires decreased.

  20. Approaching the ideal elastic strain limit in silicon nanowires.

    Science.gov (United States)

    Zhang, Hongti; Tersoff, Jerry; Xu, Shang; Chen, Huixin; Zhang, Qiaobao; Zhang, Kaili; Yang, Yong; Lee, Chun-Sing; Tu, King-Ning; Li, Ju; Lu, Yang

    2016-08-01

    Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this "deep ultra-strength" for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising "elastic strain engineering" applications.

  1. Assessment on thermoelectric power factor in silicon nanowire networks

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J.; Kobayashi, Nobuhiko P. [Baskin School of Engineering, University of California Santa Cruz, CA (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz, NASA Ames Research Center, Moffett Field, CA (United States); Coleman, Elane; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

    2012-01-15

    Thermoelectric devices based on three-dimensional networks of highly interconnected silicon nanowires were fabricated and the parameters that contribute to the power factor, namely the Seebeck coefficient and electrical conductivity were assessed. The large area (2 cm x 2 cm) devices were fabricated at low cost utilizing a highly scalable process involving silicon nanowires grown on steel substrates. Temperature dependence of the Seebeck coefficient was found to be weak over the range of 20-80 C at approximately -400 {mu}V/K for unintentionally doped devices and {+-}50 {mu}V/K for p-type and n-type devices, respectively. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Epitaxial growth of silicon nanowires using an aluminium catalyst.

    Science.gov (United States)

    Wang, Yewu; Schmidt, Volker; Senz, Stephan; Gösele, Ulrich

    2006-12-01

    Silicon nanowires have been identified as important components for future electronic and sensor nanodevices. So far gold has dominated as the catalyst for growing Si nanowires via the vapour-liquid-solid (VLS) mechanism. Unfortunately, gold traps electrons and holes in Si and poses a serious contamination problem for Si complementary metal oxide semiconductor (CMOS) processing. Although there are some reports on the use of non-gold catalysts for Si nanowire growth, either the growth requires high temperatures and/or the catalysts are not compatible with CMOS requirements. From a technological standpoint, a much more attractive catalyst material would be aluminium, as it is a standard metal in Si process lines. Here we report for the first time the epitaxial growth of Al-catalysed Si nanowires and suggest that growth proceeds via a vapour-solid-solid (VSS) rather than a VLS mechanism. It is also found that the tapering of the nanowires can be strongly reduced by lowering the growth temperature.

  3. Silicon nanowire based Pirani sensor for vacuum measurements

    Science.gov (United States)

    Brun, T.; Mercier, D.; Koumela, A.; Marcoux, C.; Duraffourg, L.

    2012-10-01

    Nano-Pirani vacuum gauges based on the physical properties of suspended silicon nanowires have been fabricated and characterized. With a 160 × 260 nm2 rectangular section and a 5.2 μm length, they are 50 times smaller than the smallest silicon based vacuum sensor and they exhibits much lower power consumption. The nano-Pirani constructed are capable of measuring pressures from 50 to 105 Pa. Moreover, their fabrication is compatible with microelectronic and micromachining fabrication techniques making them suitable for in-situ monitoring of micro and nano systems vacuum packaging.

  4. Electronic Structure of Silicon Nanowires Matrix from Ab Initio Calculations.

    Science.gov (United States)

    Monastyrskii, Liubomyr S; Boyko, Yaroslav V; Sokolovskii, Bogdan S; Potashnyk, Vasylyna Ya

    2016-12-01

    An investigation of the model of porous silicon in the form of periodic set of silicon nanowires has been carried out. The electronic energy structure was studied using a first-principle band method-the method of pseudopotentials (ultrasoft potentials in the basis of plane waves) and linearized mode of the method of combined pseudopotentials. Due to the use of hybrid exchange-correlation potentials (B3LYP), the quantitative agreement of the calculated value of band gap in the bulk material with experimental data is achieved. The obtained results show that passivation of dangling bonds with hydrogen atoms leads to substantial transformation of electronic energy structure. At complete passivation of the dangling silicon bonds by hydrogen atoms, the band gap value takes the magnitude which substantially exceeds that for bulk silicon. The incomplete passivation gives rise to opposite effect when the band gap value decreases down the semimetallic range.

  5. Enhanced thermoelectric performance of rough silicon nanowires.

    Science.gov (United States)

    Hochbaum, Allon I; Chen, Renkun; Delgado, Raul Diaz; Liang, Wenjie; Garnett, Erik C; Najarian, Mark; Majumdar, Arun; Yang, Peidong

    2008-01-10

    Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

  6. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  7. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  8. Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

    Science.gov (United States)

    Gomes, U. P.; Ercolani, D.; Zannier, V.; Battiato, S.; Ubyivovk, E.; Mikhailovskii, V.; Murata, Y.; Heun, S.; Beltram, F.; Sorba, L.

    2017-02-01

    We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si(111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but careful choice of annealing and growth temperature allows us to strongly reduce the relative density of these islands and to realize samples with high nanowire yield.

  9. Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

    Energy Technology Data Exchange (ETDEWEB)

    Kyoung Ryu, Yu; Garcia, Ricardo, E-mail: r.garcia@csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Aitor Postigo, Pablo; Garcia, Fernando [Instituto de Microelectrónica de Madrid (IMM-CNM-CSIC), 28760 Tres Cantos, Madrid (Spain)

    2014-06-02

    Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained with a top-down lithography method.

  10. Silicon nanowires for ultra-fast and ultrabroadband optical signal processing

    DEFF Research Database (Denmark)

    Ji, Hua; Hu, Hao; Pu, Minhao;

    2015-01-01

    In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical...

  11. Soft bioelectronics using nanomaterials

    Science.gov (United States)

    Lee, Hyunjae; Kim, Dae-Hyeong

    2016-09-01

    Recently, soft bioelectronics has attracted significant attention because of its potential applications in biointegrated healthcare devices and minimally invasive surgical tools. Mechanical mismatch between conventional electronic/optoelectronic devices and soft human tissues/organs, however, causes many challenges in materials and device designs of bio-integrated devices. Intrinsically soft hybrid materials comprising twodimensional nanomaterials are utilized to solve these issues. In this paper, we describe soft bioelectronic devices based on graphene synthesized by a chemical vapor deposition process. These devices have unique advantages over rigid electronics, particularly in biomedical applications. The functionalized graphene is hybridized with other nanomaterials and fabricated into high-performance sensors and actuators toward wearable and minimally invasive healthcare devices. Integrated bioelectronic systems constructed using these devices solve pending issues in clinical medicine while providing new opportunities in personalized healthcare.

  12. Investigation of functionalized silicon nanowires by self-assembled monolayer

    Science.gov (United States)

    Hemed, Nofar Mintz; Convertino, Annalisa; Shacham-Diamand, Yosi

    2016-03-01

    The functionalization using self assembled monolayer (SAM) of silicon nanowires (SiNW) fabricated by plasma enhanced chemical vapor deposition (PECVD) is reported here. The SAM is being utilized as the first building block in the functionalization process. The morphology of the SiNW comprises a polycrystalline core wrapped by an hydrogenated amorphous silicon (α-Si:H) shell. Since most of the available methods for SAM verification and characterization are suitable only for flat substrates; therefore, in addition to the SiNW α-Si:H on flat samples were produced in the same system as the SiNWs. First we confirmed the SAM's presence on the flat α-Si:H samples using the following methods: contact angle measurement to determine the change in surface energy; atomic force microscopy (AFM) to determine uniformity and molecular coverage. Spectroscopic ellipsometry and X-ray reflectivity (XRR) were performed to measure SAM layer thickness and density. X-ray photoelectron spectroscopy (XPS) was applied to study the chemical states of the surface. Next, SiNW/SAM were tested by electrochemical impedance spectroscopy (EIS), and the results were compared to α-Si:H/SAM. The SAM electrical coverage on SiNW and α-Si:H was found to be ∼37% and ∼65 ± 3%, respectively. A model, based on transmission line theory for the nanowires is presented to explain the disparity in results between the nanowires and flat surface of the same materials.

  13. Self-heated silicon nanowires for high performance hydrogen gas detection

    Science.gov (United States)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Moon, Dong-Il; Choi, Yang-Kyu; Park, Inkyu

    2015-03-01

    Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate silicon nanowires in wafer scale with high reproducibility and excellent compatibility with electronic readout circuits. Decoration of palladium nanoparticles onto the silicon nanowires enables sensitive and selective detection of hydrogen gas at room temperature. Self-heating of silicon nanowire sensors allows us to enhance response and recovery performances to hydrogen gas, and to reduce the influence of interfering gases such as water vapor and carbon monoxide. A short-pulsed heating during recovery was found to be effective for additional reduction of operation power as well as recovery characteristics. This self-heated silicon nanowire gas sensor will be suitable for ultralow-power applications such as mobile telecommunication devices and wireless sensing nodes.

  14. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica.

    Science.gov (United States)

    Luo, Xiaogang; Ma, Wenhui; Zhou, Yang; Liu, Dachun; Yang, Bin; Dai, Yongnian

    2009-11-11

    Silicon carbide nanowires have been synthesized at 1400 degrees C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core-shell structure and grow along direction. The diameter of silicon carbide nanowires is about 50-200 nm and the length from tens to hundreds of micrometers. The vapor-solid mechanism is proposed to elucidate the growth process. The photoluminescence of the synthesized silicon carbide nanowires shows significant blueshifts, which is resulted from the existence of oxygen defects in amorphous layer and the special rough core-shell interface.

  15. A stamped PEDOT:PSS-silicon nanowire hybrid solar cell.

    Science.gov (United States)

    Moiz, Syed Abdul; Nahhas, Ahmed Muhammad; Um, Han-Don; Jee, Sang-Won; Cho, Hyung Koun; Kim, Sang-Woo; Lee, Jung-Ho

    2012-04-13

    A novel stamped hybrid solar cell was proposed using the stamping transfer technique by stamping an active PEDOT:PSS thin layer onto the top of silicon nanowires (SiNWs). Compared to a bulk-type counterpart that fully embeds SiNWs inside PEDOT:PSS, an increase in the photovoltaic efficiency was observed by a factor of ∼4.6, along with improvements in both electrical and optical responses for the stamped hybrid cell. Such improvements for hybrid cells was due to the formation of well-connected and linearly aligned active PEDOT:PSS channels at the top ends of the nanowires after the stamping process. These stamped channels facilitated not only to improve the charge transport, light absorption, but also to decrease the free carriers as well as exciton recombination losses for stamped hybrid solar cells.

  16. Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

    Science.gov (United States)

    Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

    2016-08-01

    Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

  17. Electron transport in silicon nanowires having different cross-sections

    Directory of Open Access Journals (Sweden)

    Muscato Orazio

    2016-06-01

    Full Text Available Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.

  18. Reliable fabrication of sub-10 nm silicon nanowires by optical lithography

    Science.gov (United States)

    Ramadan, Sami; Kwa, Kelvin; King, Peter; O'Neill, Anthony

    2016-10-01

    The reliable and controllable fabrication of silicon nanowires is achieved, using mature CMOS technology processes. This will enable a low-cost route to integrating novel nanostructures with CMOS logic. The challenge of process repeatability has been overcome by careful study of material properties for processes such as etching and oxidation. By controlling anisotropic wet etching conditions, selection of nitride mask layer properties and sidewall oxidation, a robust process was achieved to realize silicon nanowires with sub 10 nm features. Surface roughness of nanowires was improved by a suitable oxidation step. The influence of process conditions on the shape of the nanowire was studied using TCAD simulation.

  19. Effective antireflection properties of porous silicon nanowires for photovoltaic applications

    KAUST Repository

    Najar, Adel

    2013-01-01

    Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 µm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.

  20. Thermal Transport in Silicon Nanowires at High Temperature up to 700 K.

    Science.gov (United States)

    Lee, Jaeho; Lee, Woochul; Lim, Jongwoo; Yu, Yi; Kong, Qiao; Urban, Jeffrey J; Yang, Peidong

    2016-07-13

    Thermal transport in silicon nanowires has captured the attention of scientists for understanding phonon transport at the nanoscale, and the thermoelectric figure-of-merit (ZT) reported in rough nanowires has inspired engineers to develop cost-effective waste heat recovery systems. Thermoelectric generators composed of silicon target high-temperature applications due to improved efficiency beyond 550 K. However, there have been no studies of thermal transport in silicon nanowires beyond room temperature. High-temperature measurements also enable studies of unanswered questions regarding the impact of surface boundaries and varying mode contributions as the highest vibrational modes are activated (Debye temperature of silicon is 645 K). Here, we develop a technique to investigate thermal transport in nanowires up to 700 K. Our thermal conductivity measurements on smooth silicon nanowires show the classical diameter dependence from 40 to 120 nm. In conjunction with Boltzmann transport equation, we also probe an increasing contribution of high-frequency phonons (optical phonons) in smooth silicon nanowires as the diameter decreases and the temperature increases. Thermal conductivity of rough silicon nanowires is significantly reduced throughout the temperature range, demonstrating a potential for efficient thermoelectric generation (e.g., ZT = 1 at 700 K).

  1. Interactive effect of hysteresis and surface chemistry on gated silicon nanowire gas sensors.

    Science.gov (United States)

    Paska, Yair; Haick, Hossam

    2012-05-01

    Gated silicon nanowire gas sensors have emerged as promising devices for chemical and biological sensing applications. Nevertheless, the performance of these devices is usually accompanied by a "hysteresis" phenomenon that limits their performance under real-world conditions. In this paper, we use a series of systematically changed trichlorosilane-based organic monolayers to study the interactive effect of hysteresis and surface chemistry on gated silicon nanowire gas sensors. The results show that the density of the exposed or unpassivated Si-OH groups (trap states) on the silicon nanowire surface play by far a crucial effect on the hysteresis characteristics of the gated silicon nanowire sensors, relative to the effect of hydrophobicity or molecular density of the organic monolayer. Based on these findings, we provide a tentative model-based understanding of (i) the relation between the adsorbed organic molecules, the hysteresis, and the related fundamental parameters of gated silicon nanowire characteristics and of (ii) the relation between the hysteresis drift and possible screening effect on gated silicon nanowire gas sensors upon exposure to different analytes at real-world conditions. The findings reported in this paper could be considered as a launching pad for extending the use of the gated silicon nanowire gas sensors for discriminations between polar and nonpolar analytes in complex, real-world gas mixtures.

  2. Formation of aligned silicon nanowire on silicon by electroless etching in HF solution

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, N.; Douani, R. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Hadjersi, T., E-mail: hadjersi@yahoo.co [Unite de Developpement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Boukherroub, R. [Institut de Recherche Interdisciplinaire (IRI, FRE 2963), Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France)

    2009-12-15

    It was demonstrated that the etching in HF-based aqueous solution containing AgNO{sub 3} and Na{sub 2}S{sub 2}O{sub 8} as oxidizing agents or by Au-assisted electroless etching in HF/H{sub 2}O{sub 2} solution at 50 deg. C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters {approx}10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented.

  3. Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating

    Science.gov (United States)

    Ryu, Sang-gil; Kim, Eunpa; Allen, Frances I.; Hwang, David J.; Minor, Andrew M.; Grigoropoulos, Costas P.

    2016-08-01

    We investigate the early stage of silicon nanowire growth by the vapor-liquid-solid mechanism using laser-localized heating combined with ex-situ chemical mapping analysis by energy-filtered transmission electron microscopy. By achieving fast heating and cooling times, we can precisely determine the nucleation times for nanowire growth. We find that the silicon nanowire nucleation process occurs on a time scale of ˜10 ms, i.e., orders of magnitude faster than the times reported in investigations using furnace processes. The rate-limiting step for silicon nanowire growth at temperatures in the vicinity of the eutectic temperature is found to be the gas reaction and/or the silicon crystal growth process, whereas at higher temperatures it is the rate of silicon diffusion through the molten catalyst that dictates the nucleation kinetics.

  4. A silicon-nanowire memory driven by optical gradient force induced bistability

    Energy Technology Data Exchange (ETDEWEB)

    Dong, B. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Cai, H., E-mail: caih@ime.a-star.edu.sg; Gu, Y. D.; Kwong, D. L. [Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Chin, L. K.; Ng, G. I.; Ser, W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Huang, J. G. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); School of Mechanical Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Yang, Z. C. [School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China); Liu, A. Q., E-mail: eaqliu@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China)

    2015-12-28

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  5. Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

    Energy Technology Data Exchange (ETDEWEB)

    Cayron, Cyril; Latu-Romain, Laurence; Mouchet, Celine; Secouard, Christopher; Rouviere, Emmanuelle; Simonato, Jean-Pierre [CEA DRT, LITEN, Minatec, 38 - Grenoble (France); Den Hertog, Martien; Rouviere, Jean-Luc [CEA, DSM, INAC, Minatec, 38 - Grenoble (France)

    2009-04-15

    Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grown via the vapour-liquid- solid method and on silicon thin films deposited by electron beam evaporation. Many explanations have been given in the past, without consensus among the scientific community: size artifacts, twinning artifacts or, more widely accepted, the existence of new hexagonal Si phases. In order to resolve this issue, the microstructures of Si nanowires and Si thin films have been characterized by TEM, high-resolution transmission electron microscopy (HRTEM) and highresolution scanning transmission electron microscopy. Despite the differences in the geometries and elaboration processes, the EDPs of the materials show great similarities. The different hypotheses reported in the literature have been investigated. It was found that the positions of the diffraction spots in the EDPs could be reproduced by simulating a hexagonal structure with c/a=12(2/3){sup 1/2}, but the intensities in many EDPs remained unexplained. Finally, it was established that all the experimental data, i.e. EDPs and HRTEM images, agree with a classical cubic silicon structure containing two microstructural defects: (i) overlapping {sigma}3 microtwins which induce extra spots by double diffraction, and (ii) nanotwins which induce extra spots as a result of streaking effects. It is concluded that there is no hexagonal phase in the Si nanowires and the Si thin films presented in this work. (orig.)

  6. Graphene transistors for bioelectronics

    OpenAIRE

    Hess, Lucas H.; Seifert, Max; Garrido, Jose A.

    2013-01-01

    This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect to competing technologies. To obtain a better understanding of the working principle of solution-gated transistors, the graphene-electrolyte interface is discussed in detail. The in-vitro biocompatibility of graphene is assessed by primary neuron cultures....

  7. Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Dkhil, S., E-mail: sadok.bendekhil@gmail.com [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Bourguiga, R. [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Davenas, J. [Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Cornu, D. [Institut Europeen des Membranes, UMR CNRS 5635, Ecole Nationale superieure de Chimie, Universite de Montpellier, 1919 route de Mende, F34000 Montpellier (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Hybrid solar cells based on blends of poly(N-vinylcarbazole) and silicon nanowires have been fabricated. Black-Right-Pointing-Pointer We have investigated the charge transfer between PVK and SiNWs by the way of the quenching of the PVK photoluminescence. Black-Right-Pointing-Pointer The relation between the morphology of the composite thin films and the charge transfer between SiNWs and PVK has been examined. Black-Right-Pointing-Pointer We have investigated the effects of SiNWs concentration on the photovoltaic characteristics leading to the optimization of a critical SiNWs concentration. - Abstract: Hybrid thin films combining the high optical absorption of a semiconducting polymer film and the electronic properties of silicon fillers have been investigated in the perspective of the development of low cost solar cells. Bulk heterojunction photovoltaic materials based on blends of a semiconductor polymer poly(N-vinylcarbazole) (PVK) as electron donor and silicon nanowires (SiNWs) as electron acceptor have been studied. Composite PVK/SiNWs films were cast from a common solvent mixture. UV-visible spectrometry and photoluminescence of the composites have been studied as a function of the SiNWs concentration. Photoluminescence spectroscopy (PL) shows the existence of a critical SiNWs concentration of about 10 wt % for PL quenching corresponding to the most efficient charge pair separation. The photovoltaic (PV) effect has been studied under illumination. The optimum open-circuit voltage V{sub oc} and short-circuit current density J{sub sc} are obtained for 10 wt % SiNWs whereas a degradation of these parameters is observed at higher SiNWs concentrations. These results are correlated to the formation of aggregates in the composite leading to recombination of the photogenerated charge pairs competing with the dissociation mechanism.

  8. Synthesis of silicon carbide nanowires in a catalyst-assisted process

    Science.gov (United States)

    Deng, S. Z.; Wu, Z. S.; Zhou, Jun; Xu, N. S.; Chen, Jian; Chen, Jun

    2002-04-01

    At elevated temperatures, silicon carbide nanowires were synthesized in a catalyst-assisted process using aluminum as a catalyst. Transmission electron microscopy shows that the nanowires are around 20 nm in diameter and around 2 μm in length. High resolution transmission electron microscopy shows that the nanowires are crystalline β-SiC. Raman spectra show the typical features of nano-SiC. A model based on vapor-liquid-solid process is proposed to explain our finding.

  9. Scaling theory put into practice: First-principles modeling of transport in doped silicon nanowires

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, R.; Jauho, Antti-Pekka

    2007-01-01

    We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires by co...

  10. Fabrication Characteristics of Silicon Nanowires via the Electrochemical Electroless Etching Method.

    Science.gov (United States)

    Kang, ByeongSu; Jeong, Chae Hwan; Kim, Changheon; Kim, Min-Young; Choi, Bum Ho; Lee, Moo Sung; Kim, Ho-Sung

    2015-07-01

    A silicon nanowire structure was fabricated using the electrochemical electroless etching method, involving electroless plating and the electrochemical etching process. The reflection of the absorption layer with the nanowires' structure was about 5%, which is better than a bulk-type solar cell (10%).

  11. Vertically aligned nanowires on flexible silicone using a supported alumina template prepared by pulsed anodization

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.

    2009-01-01

    Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using...

  12. Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

    Directory of Open Access Journals (Sweden)

    Britta Kämpken

    2012-07-01

    Full Text Available In this work the applicability of neopentasilane (Si(SiH34 as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of “liquid bright gold”, a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.

  13. Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy

    Science.gov (United States)

    Kolíbal, Miroslav; Novák, Libor; Shanley, Toby; Toth, Milos; Šikola, Tomáš

    2015-12-01

    Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate.Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains

  14. Ultra-High-Speed Optical Serial-to-Parallel Data Conversion in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Mulvad, Hans Christian Hansen; Palushani, Evarist; Hu, Hao;

    2011-01-01

    We demonstrate conversion from 64×10 Gbit/s OTDM to 25 GHz DWDM by time-domain optical Fourier transformation. Using a single silicon nanowire, 40 of 64 OTDM tributaries are simultaneously converted to DWDM channels within FEC limits.......We demonstrate conversion from 64×10 Gbit/s OTDM to 25 GHz DWDM by time-domain optical Fourier transformation. Using a single silicon nanowire, 40 of 64 OTDM tributaries are simultaneously converted to DWDM channels within FEC limits....

  15. Ultra-Broadband Tunable Wavelength Conversion of Sub-Picosecond Pulses in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Galili, Michael;

    2011-01-01

    We present a tunable wavelength conversion of sub-picosecond pulses based on fourwave mixing in a dispersion engineered silicon nanowire. A 100-nm tuning range of the converted wavelength is demonstrated with an almost constant conversion efficiency.......We present a tunable wavelength conversion of sub-picosecond pulses based on fourwave mixing in a dispersion engineered silicon nanowire. A 100-nm tuning range of the converted wavelength is demonstrated with an almost constant conversion efficiency....

  16. Polarization Insensitive Wavelength Conversion Based on Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Peucheret, Christophe

    2012-01-01

    We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements....

  17. Surface-Decorated Silicon Nanowires: A Route to High-ZT Thermoelectrics

    DEFF Research Database (Denmark)

    Markussen, Troels; Jauho, Antti-Pekka; Brandbyge, Mads

    2009-01-01

    Based on atomistic calculations of electron and phonon transport, we propose to use surface-decorated silicon nanowires for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying ideas: nanotrees and alkyl functionalized silicon nanowires. For both...... systems we find (i) that the phonon conductance is significantly reduced compared to the electronic conductance leading to high thermoelectric figure of merit ZT, and (ii) for ultrathin wires, surface decoration leads to significantly better performance than surface disorder....

  18. Synthesis, characterizations, and applications of carbon nanotubes and silicon nanowires

    Science.gov (United States)

    Xiong, Guangyong

    Carbon nanotubes (CNTs) have received great attention because of their unique structure and promising applications in microelectronic devices such as field electron emitters. Silicon nanowires (SiNWs) are also very popular because Si is a well established electronic material. This thesis will present my effort on synthesis, characterizations, and applications of CNTs and SiNWs by thermal chemical vapor deposition (CVD) method. For CNTs growth, block copolymer micelles were used as a template to create large area arrays of metal nanoclusters as catalysts for patterned arrays, and Fe/Al/Fe sandwich film on single crystal magnesium oxide (MgO) substrate was used as the catalyst for growth of long length aligned CNTs by CVD. The factors that affect the structure and length of CNTs have been investigated. CNTs were also grown on etched Si substrate by PECVD method. Continuous dropwise condensation was achieved on a biomimetic two-tier texture with short CNTs deposited on micromachined pillars. Superhydrophobic condensation model was studied. For SiNWs growth, hydrogen gold tetrachloride was uniformly mixed into the salt and decomposed into gold nanoparticles at the growth temperature and acted as the catalyst particles to start the growth of Si nanowires. The as-grown Si nanowires are about 70--90 nm in diameter and up to 200 micrometers long. The salt was completely removed by water rinse after growth. Field emission of aligned CNTs grown on Si substrates and SiNWs on Si substrates and carbon clothes has been studied. A post growth annealing procedure has been found to drastically improve the field emission performance of these CNTs and SiNWs.

  19. Thermal conductivity of silicon nanowires embedded on thermoelectric platforms

    Science.gov (United States)

    Choi, JinYong; Cho, Kyoungah; Yoon, Dae Sung; Kim, Sangsig

    2016-10-01

    In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06  ±  0.12 and 20.29  ±  0.77 W m-1 · K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.

  20. Silicon nanowires for biosensing, energy storage, and conversion.

    Science.gov (United States)

    Wang, Yanli; Wang, Tianyu; Da, Peimei; Xu, Ming; Wu, Hao; Zheng, Gengfeng

    2013-10-04

    Semiconducting silicon nanowires (SiNWs) represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, structure, morphology, doping, and assembly of SiNWs, in both individual and array format, as well as incorporation with other materials, offers a nanoscale building block with unique electronic, optoelectronic, and catalytic properties, thus allowing for a variety of exciting opportunities in the fields of life sciences and renewable energy. This review provides a brief summary of SiNW research in the past decade, from the SiNW synthesis by both the top-down approaches and the bottom-up approaches, to several important biological and energy applications including biomolecule sensing, interfacing with cells and tissues, lithium-ion batteries, solar cells, and photoelectrochemical conversion.

  1. Impedance Analysis of Silicon Nanowire Lithium Ion Battery Anodes

    KAUST Repository

    Ruffo, Riccardo

    2009-07-02

    The impedance behavior of silicon nanowire electrodes has been investigated to understand the electrochemical process kinetics that influences the performance when used as a high-capacity anode in a lithium ion battery. The ac response was measured by using impedance spectroscopy in equilibrium conditions at different lithium compositions and during several cycles of charge and discharge in a half cell vs. metallic lithium. The impedance analysis shows the contribution of both surface resistance and solid state diffusion through the bulk of the nanowires. The surface process is dominated by a solid electrolyte layer (SEI) consisting of an inner, inorganic insoluble part and several organic compounds at the outer interface, as seen by XPS analysis. The surface resistivity, which seems to be correlated with the Coulombic efficiency of the electrode, grows at very high lithium contents due to an increase in the inorganic SEI thickness. We estimate the diffusion coefficient of about 2 × 10 -10 cm 2/s for lithium diffusion in silicon. A large increase in the electrode impedance was observed at very low lithium compositions, probably due to a different mechanism for lithium diffusion inside the wires. Restricting the discharge voltage to 0.7 V prevents this large impedance and improves the electrode lifetime. Cells cycled between 0.07 and 0.70 V vs. metallic lithium at a current density of 0.84 A/g (C/5) showed good Coulombic efficiency (about 99%) and maintained a capacity of about 2000 mAh/g after 80 cycles. © 2009 American Chemical Society.

  2. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    KAUST Repository

    Ball, Jeremy

    2012-08-20

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  3. Chemically Etched Silicon Nanowires as Anodes for Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    West, Hannah Elise [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This study focused on silicon as a high capacity replacement anode for Lithium-ion batteries. The challenge of silicon is that it expands ~270% upon lithium insertion which causes particles of silicon to fracture, causing the capacity to fade rapidly. To account for this expansion chemically etched silicon nanowires from the University of Maine were studied as anodes. They were built into electrochemical half-cells and cycled continuously to measure the capacity and capacity fade.

  4. Growth mechanism and quantum confinement effect of silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    冯孙齐; 俞大鹏; 张洪洲; 白志刚; 丁彧; 杭青岭; 邹英华; 王晶晶

    1999-01-01

    The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.

  5. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    Science.gov (United States)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  6. A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells.

    Science.gov (United States)

    Li, Yingfeng; Li, Meicheng; Fu, Pengfei; Li, Ruike; Song, Dandan; Shen, Chao; Zhao, Yan

    2015-06-26

    Silicon nanorod based radial-junction solar cells are competitive alternatives to traditional planar silicon solar cells. In various silicon nanorods, nanocone is always considered to be better than nanowire in light-absorption. Nevertheless, we find that this notion isn't absolutely correct. Silicon nanocone is indeed significantly superior over nanowire in light-concentration due to its continuous diameters, and thus resonant wavelengths excited. However, the concentrated light can't be effectively absorbed and converted to photogenerated carriers, since its propagation path in silicon nanocone is shorter than that in nanowire. The results provide critical clues for the design of silicon nanorod based radial-junction solar cells.

  7. Study of optical absorbance in porous silicon nanowires for photovoltaic applications

    KAUST Repository

    Charrier, Joël

    2013-10-01

    Porous silicon nanowires (PSiNWs) layers fabrication was reported. Reflectance spectra were measured as a function of the nanowire length and were inferior to 0.1% and a strong photoluminescence (PL) signal was measured from samples. Models based on cone shape of nanowires located in circular and rectangular bases were used to calculate the reflectance using the transfer matrix formalism (TMF) of PSiNWs layer. The modeling of the reflectance permits to explain this value by taking account into the shape of the nanowires and its porosity. Optical absorbance and transmission were also theoretically studied. The absorbance was superior to that obtained with silicon nanowires and the ultimate efficiency was about equal to 25% for normal incidence angle. These results could be applied to the potential application in low-cost and high efficiency PSiNWs based solar cells. © 2013 Elsevier B.V. All rights reserved.

  8. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

    Science.gov (United States)

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

  9. The electromechanical response of silicon nanowires to buckling mode transitions

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Chee Chung; Liao, Kin [Division of Bioengineering, Nanyang Technological University (Singapore); Reboud, Julien; Neuzil, Pavel; Soon, Jeffrey; Agarwal, Ajay; Balasubramanian, Naranayan, E-mail: pavel@kist-europe.de, E-mail: askliao@ntu.edu.sg [Institute of Microelectronics, A-STAR (Agency for Science, Technology, and Research) (Singapore)

    2010-10-08

    Here we show how the electromechanical properties of silicon nanowires (NWs) are modified when they are subjected to extreme mechanical deformations (buckling and buckling mode transitions), such as those appearing in flexible devices. Flexible devices are prone to frequent dynamic stress variations, especially buckling, while the small size of NWs could give them an advantage as ultra-sensitive electromechanical stress sensors embedded in such devices. We evaluated the NWs post-buckling behavior and the effects of buckling mode transition on their piezoresistive gauge factor (GF). Polycrystalline silicon NWs were embedded in SiO{sub 2} microbridges to facilitate concurrent monitoring of their electrical resistance without problematic interference, while an external stylus performed controlled deformations of the microbridges. At points of instability, the abrupt change in the buckling configuration of the microbridge corresponded to a sharp resistance change in the embedded NWs, without altering the NWs' GF. These results also highlight the importance of strategically positioning the NW in the devices, since electrical monitoring of buckling mode transitions is feasible when the deformations impact a region where the NW is placed. The highly flexible NWs also exhibited unusually large fracture strength, sustaining tensile strains up to 5.6%; this will prove valuable in demanding flexible sensors.

  10. Generation of reactive oxygen species from silicon nanowires.

    Science.gov (United States)

    Leonard, Stephen S; Cohen, Guy M; Kenyon, Allison J; Schwegler-Berry, Diane; Fix, Natalie R; Bangsaruntip, Sarunya; Roberts, Jenny R

    2014-01-01

    Processing and synthesis of purified nanomaterials of diverse composition, size, and properties is an evolving process. Studies have demonstrated that some nanomaterials have potential toxic effects and have led to toxicity research focusing on nanotoxicology. About two million workers will be employed in the field of nanotechnology over the next 10 years. The unknown effects of nanomaterials create a need for research and development of techniques to identify possible toxicity. Through a cooperative effort between National Institute for Occupational Safety and Health and IBM to address possible occupational exposures, silicon-based nanowires (SiNWs) were obtained for our study. These SiNWs are anisotropic filamentary crystals of silicon, synthesized by the vapor-liquid-solid method and used in bio-sensors, gas sensors, and field effect transistors. Reactive oxygen species (ROS) can be generated when organisms are exposed to a material causing cellular responses, such as lipid peroxidation, H2O2 production, and DNA damage. SiNWs were assessed using three different in vitro environments (H2O2, RAW 264.7 cells, and rat alveolar macrophages) for ROS generation and possible toxicity identification. We used electron spin resonance, analysis of lipid peroxidation, measurement of H2O2 production, and the comet assay to assess generation of ROS from SiNW and define possible mechanisms. Our results demonstrate that SiNWs do not appear to be significant generators of free radicals.

  11. Fabrication and optical simulation of vertically aligned silicon nanowires

    Science.gov (United States)

    Hossain, M. K.; Salhi, B.; Mukhaimer, A. W.; Al-Sulaiman, F. A.

    2016-10-01

    Silicon nanowires (Si-NWs) have been considered widely as a perfect light absorber with strong evidence of enhanced optical functionalities. Here we report finite-difference time-domain simulations for Si-NWs to elucidate the key factors that determine enhanced light absorption, energy flow behavior, electric field profile, and excitons generation rate distribution. To avoid further complexity, a single Si-NW of cylindrical shape was modeled on c-Si and optimized to elucidate the aforementioned characteristics. Light absorption and energy flow distribution confirmed that Si-NW facilitates to confine photon absorption of several orders of enhancement whereas the energy flow is also distributed along the wire itself. With reference to electric field and excitons generation distribution it was revealed that Si-NW possesses the sites of strongest field distributions compared to those of flat silicon wafer. To realize the potential of Si-NWs-based thin film solar cell, a simple process was adopted to acquire vertically aligned Si-NWs grown on c-Si wafer. Further topographic characterizations were conducted through scanning electron microscope and tunneling electron microscope-coupled energy-dispersive spectroscopy.

  12. Prelithiated Silicon Nanowires as an Anode for Lithium Ion Batteries

    KAUST Repository

    Liu, Nian

    2011-08-23

    Silicon is one of the most promising anode materials for the next-generation high-energy lithium ion battery (LIB), while sulfur and some other lithium-free materials have recently shown high promise as cathode materials. To make a full battery out of them, either the cathode or the anode needs to be prelithiated. Here, we present a method for prelithiating a silicon nanowire (SiNW) anode by a facile self-discharge mechanism. Through a time dependence study, we found that 20 min of prelithiation loads ∼50% of the full capacity into the SiNWs. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies show that the nanostructure of SiNWs is maintained after prelithiation. We constructed a full battery using our prelithiated SiNW anode with a sulfur cathode. Our work provides a protocol for pairing lithium-free electrodes to make the next-generation high-energy LIB. © 2011 American Chemical Society.

  13. Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects

    Science.gov (United States)

    Gil-Santos, E.; Ramos, D.; Pini, V.; Llorens, J.; Fernández-Regúlez, M.; Calleja, M.; Tamayo, J.; San Paulo, A.

    2013-03-01

    We study optical back-action effects associated with confined electromagnetic modes in silicon nanowire resonators interacting with a laser beam used for interferometric read-out of the nanowire vibrations. Our analysis describes the resonance frequency shift produced in the nanowires by two different mechanisms: the temperature dependence of the nanowire's Young's modulus and the effect of radiation pressure. We find different regimes in which each effect dominates depending on the nanowire morphology and dimensions, resulting in either positive or negative frequency shifts. Our results also show that in some cases bolometric and radiation pressure effects can have opposite contributions so that their overall effect is greatly reduced. We conclude that Si nanowire resonators can be engineered for harnessing back-action effects for either optimizing frequency stability or exploiting dynamic phenomena such as parametric amplification.

  14. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Directory of Open Access Journals (Sweden)

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  15. Surface trap mediated electronic transport in biofunctionalized silicon nanowires

    Science.gov (United States)

    Puppo, F.; Traversa, F. L.; Di Ventra, M.; De Micheli, G.; Carrara, S.

    2016-08-01

    Silicon nanowires (SiNWs), fabricated via a top-down approach and then functionalized with biological probes, are used for electrically-based sensing of breast tumor markers. The SiNWs, featuring memristive-like behavior in bare conditions, show, in the presence of biomarkers, modified hysteresis and, more importantly, a voltage memory component, namely a voltage gap. The voltage gap is demonstrated to be a novel and powerful parameter of detection thanks to its high-resolution dependence on charges in proximity of the wire. This unique approach of sensing has never been studied and adopted before. Here, we propose a physical model of the surface electronic transport in Schottky barrier SiNW biosensors, aiming at reproducing and understanding the voltage gap based behavior. The implemented model describes well the experimental I-V characteristics of the device. It also links the modification of the voltage gap to the changing concentration of antigens by showing the decrease of this parameter in response to increasing concentrations of the molecules that are detected with femtomolar resolution in real human samples. Both experiments and simulations highlight the predominant role of the dynamic recombination of the nanowire surface states, with the incoming external charges from bio-species, in the appearance and modification of the voltage gap. Finally, thanks to its compactness, and strict correlation with the physics of the nanodevice, this model can be used to describe and predict the I-V characteristics in other nanostructured devices, for different than antibody-based sensing as well as electronic applications.

  16. Long Wavelength Plasmonic Absorption Enhancement in Silicon Using Optical Lithography Compatible Core-Shell-Type Nanowires

    Directory of Open Access Journals (Sweden)

    Mohammed Shahriar Sabuktagin

    2014-01-01

    Full Text Available Plasmonic properties of rectangular core-shell type nanowires embedded in thin film silicon solar cell structure were characterized using FDTD simulations. Plasmon resonance of these nanowires showed tunability from  nm. However this absorption was significantly smaller than the Ohmic loss in the silver shell due to very low near-bandgap absorption properties of silicon. Prospect of improving enhanced absorption in silicon to Ohmic loss ratio by utilizing dual capability of these nanowires in boosting impurity photovoltaic effect and efficient extraction of the photogenerated carriers was discussed. Our results indicate that high volume fabrication capacity of optical lithography techniques can be utilized for plasmonic absorption enhancement in thin film silicon solar cells over the entire long wavelength range of solar radiation.

  17. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  18. Use of self-assembled peptide nanostructures for the fabrication of silicon nanowires

    DEFF Research Database (Denmark)

    Andersen, Karsten Brandt; Castillo, Jaime; Bakmand, Tania

    2011-01-01

    it a promising candidate for controlled nanofabrication without organic solvents [1]. The present work demonstrates how this unique structure can be used as both an etching mask in a dry etching procedure and as a lift-off material. As a further demonstration of the potential of this technique, the peptide...... nanotubes were utilized to fabricate silicon nanowire devices and gold nanoslits. 2. RESULTS Silicon nanowire devices were fabricated from a silicon-on-isolator (SOI) wafer, in this case with a device layer of 50 nm and a buried oxide layer of 380 nm. Metal electrodes were first patterned using standard...... photolithography, and after deposition of the electrodes, self-assembled peptide nanotubes (PNT), figure 1, were positioned on top of the electrodes. The silicon nanowires were then etched in a reactive ion etching process masked by the positioned peptide nanotubes. Finally, the peptide nanotubes were dissolved...

  19. Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salem, B. [Laboratoire des Technologies de la Microelectronique (LTM)-UMR 5129 CNRS, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble (France)], E-mail: bassem.salem@cea.fr; Dhalluin, F.; Baron, T. [Laboratoire des Technologies de la Microelectronique (LTM)-UMR 5129 CNRS, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble (France); Jamgotchian, H.; Bedu, F.; Dallaporta, H. [CRMC-N, Faculte des Sciences de Luminy, Case 913, 13288 Marseille Cedex 09 (France); Gentile, P.; Pauc, N. [CEA-DRFMC/SiNaPS, 17 Rue des Martyrs, F-38054 Grenoble (France); Hertog, M.I. den; Rouviere, J.L. [CEA-DRFMC/SP2M/LEMMA GEM-minatec, 17 Rue des Martyrs, F-38054 Grenoble (France); Ferret, P. [CEA-Leti, DOPT, 17 Rue des Martyrs, F-38054 Grenoble (France)

    2009-03-15

    In this work, we present the elaboration and the electrical characterisation of undoped silicon nanowires (SiNWs) which are grown via vapour-liquid-solid mechanism using Au nucleation catalyst and SiH{sub 4} as the silicon source. The nanowires were investigated by high-resolution transmission electron microscopy. An electrical test structure was realized by a dispersion of the nanowires on SiO{sub 2}/Si substrate with photolithography pre-patterned Au/Ti microelectrodes. The connexion is made on a single nanowire using a cross beam plate form allowing scanning electron microscopy imaging and the deposition of tungsten wiring by focussed ion beam deposition. The current-voltage characteristics of the nanowires are linear which indicates an ohmic contact between tungsten allow and SiNWs. The total resistance of the nanowires increases from 135 M{omega} to 5 G{omega} when the diameter decreases from 190 to 130 nm. This effect is may be due to the reduction of the conductive inner volume of the nanowires and to charged defects at the Si-SiO{sub 2} interface if we assume that the contact resistance is constant. Moreover, gate-dependent current versus bias voltage measurement show that the nanowires exhibit a field effect response characteristic of a p-type semiconductor.

  20. Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process.

    Science.gov (United States)

    Ishiyama, Takeshi; Nakagawa, Shuhei; Wakamatsu, Toshiki

    2016-07-28

    The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core-shell structure that consists of a single-crystalline Si core along the direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

  1. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

    OpenAIRE

    Habicht, S.; Zhao, Q. T.; Feste, S. F.; Knoll, L.; Trellenkamp, S.; Ghyselen, B.; Mantl, S

    2010-01-01

    We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon...

  2. Interfacial Engineering of Silicon Carbide Nanowire/Cellulose Microcrystal Paper toward High Thermal Conductivity.

    Science.gov (United States)

    Yao, Yimin; Zeng, Xiaoliang; Pan, Guiran; Sun, Jiajia; Hu, Jiantao; Huang, Yun; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

    2016-11-16

    Polymer composites with high thermal conductivity have attracted much attention, along with the rapid development of electronic devices toward higher speed and better performance. However, high interfacial thermal resistance between fillers and matrix or between fillers and fillers has been one of the primary bottlenecks for the effective thermal conduction in polymer composites. Herein, we report on engineering interfacial structure of silicon carbide nanowire/cellulose microcrystal paper by generating silver nanostructures. We show that silver nanoparticle-deposited silicon carbide nanowires as fillers can effectively enhance the thermal conductivity of the matrix. The in-plane thermal conductivity of the resultant composite paper reaches as high as 34.0 W/m K, which is one order magnitude higher than that of conventional polymer composites. Fitting the measured thermal conductivity with theoretical models qualitatively demonstrates that silver nanoparticles bring the lower interfacial thermal resistances both at silicon carbide nanowire/cellulose microcrystal and silicon carbide nanowire/silicon carbide nanowire interfaces. This interfacial engineering approach provides a powerful tool for sophisticated fabrication of high-performance thermal-management materials.

  3. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

  4. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution

    OpenAIRE

    Bao, Xiao-Qing; Cerqueira, M.F.; Alpuim, P.; Liu, Lifeng

    2015-01-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. L. F. Liu acknowledges the financial support by the FCT Investigator grant (IF/01595/2014).

  5. Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires

    Science.gov (United States)

    Suriano, F.; Ferri, M.; Moscatelli, F.; Mancarella, F.; Belsito, L.; Solmi, S.; Roncaglia, A.; Frabboni, S.; Gazzadi, G. C.; Narducci, D.

    2015-01-01

    The thermoelectric properties of doped polycrystalline silicon nanowires have been investigated using doping techniques that impact grain growth in different ways during the doping process. In particular, As- and P-doped nanowires were fabricated using a process flow which enables the manufacturing of surface micromachined nanowires contacted by Al/Si pads in a four-terminal configuration for thermal conductivity measurement. Also, dedicated structures for the measurement of the Seebeck coefficient and electrical resistivity were prepared. In this way, the thermoelectric figure of merit of the nanowires could be evaluated. The As-doped nanowires were heavily doped by thermal doping from spin-on-dopant sources, whereas predeposition from POCl3 was utilized for the P-doped nanowires. The thermal conductivity measured on the nanowires appeared to depend on the doping type. The P-doped nanowires showed, for comparable cross-sections, higher thermal conductivity values than As-doped nanowires, most probably because of their finer grain texture, resulting from the inhibition effect that such doping elements have on grain growth during high-temperature annealing.

  6. Spectroscopic investigations of arrays containing vertically and horizontally aligned silicon nanowires

    Science.gov (United States)

    Volpati, Diogo; Mårtensson, Niklas; Anttu, Nicklas; Viklund, Per; Sundvall, Christian; Åberg, Ingvar; Bäckström, Joakim; Olin, Håkan; Björk, Mikael T.; Castillo-Leon, Jaime

    2016-12-01

    The properties of nanowire arrays have been investigated mainly in comparison with isolated nanowires or thin films, owing to the difficulty in controlling the nanowire alignment. In this study, we report on arrays containing vertically or horizontally aligned silicon nanowires, whose alignment and structure were determined using x-ray diffraction and scanning electron microscopy. The Raman spectra of the nanowire arrays differ from those of isolated nanowires because of distinct heat dissipation rates of the absorbed energy from the laser, in agreement with recent theoretical calculations. The tailored alignment of the nanowires on solid substrates up to 1 inch of diameter also enabled the observation of resonance modes associated with light trapped into the nanowires. This was proven by comparing the light absorbed and scattered by the arrays, and may be exploited to enhance light harvesting in tandem solar cells. Significantly, the control of the assembly of nanowire arrays may have a direct impact on bottom-up technologies of high anisotropy nanomaterials.

  7. Functionalization of silicon nanowire surfaces with metal-organic frameworks

    KAUST Repository

    Liu, Nian

    2011-12-28

    Metal-organic frameworks (MOFs) and silicon nanowires (SiNWs) have been extensively studied due to their unique properties; MOFs have high porosity and specific surface area with well-defined nanoporous structure, while SiNWs have valuable one-dimensional electronic properties. Integration of the two materials into one composite could synergistically combine the advantages of both materials and lead to new applications. We report the first example of a MOF synthesized on surface-modified SiNWs. The synthesis of polycrystalline MOF-199 (also known as HKUST-1) on SiNWs was performed at room temperature using a step-by-step (SBS) approach, and X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and energy dispersive spectroscopy elemental mapping were used to characterize the material. Matching of the SiNW surface functional groups with the MOF organic linker coordinating groups was found to be critical for the growth. Additionally, the MOF morphology can by tuned by changing the soaking time, synthesis temperature and precursor solution concentration. This SiNW/MOF hybrid structure opens new avenues for rational design of materials with novel functionalities. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

  8. Static friction between silicon nanowires and elastomeric substrates.

    Science.gov (United States)

    Qin, Qingquan; Zhu, Yong

    2011-09-27

    This paper reports the first direct measurements of static friction force and interfacial shear strength between silicon (Si) nanowires (NWs) and poly(dimethylsiloxane) (PDMS). A micromanipulator is used to manipulate and deform the NWs under a high-magnification optical microscope in real time. The static friction force is measured based on "the most-bent state" of the NWs. The static friction and interface shear strength are found to depend on the ultraviolet/ozone (UVO) treatment of PDMS. The shear strength starts at 0.30 MPa without UVO treatment, increases rapidly up to 10.57 MPa at 60 min of treatment and decreases for longer treatment. Water contact angle measurements suggest that the UVO-induced hydrophobic-to-hydrophilic conversion of PDMS surface is responsible for the increase in the static friction, while the hydrophobic recovery effect contributes to the decrease. The static friction between NWs and PDMS is of critical relevance to many device applications of NWs including NW-based flexible/stretchable electronics, NW assembly and nanocomposites (e.g., supercapacitors). Our results will enable quantitative interface design and control for such applications.

  9. Silicon nanowires as negative electrode for lithium-ion microbatteries

    Energy Technology Data Exchange (ETDEWEB)

    Laik, Barbara; Pereira-Ramos, Jean-Pierre [Institut de Chimie et des Materiaux Paris Est, ICMPE/GESMAT, UMR 7182 CNRS-Universite Paris XII, 2 rue Henri Dunant, 94320 Thiais (France); Eude, Laurent; Cojocaru, Costel Sorin; Pribat, Didier [Laboratoire de Physique des Interfaces et Couches Minces, LPICM, UMR 7647 Ecole Polytechnique-CNRS, Route de Saclay, 91128 Palaiseau Cedex (France); Rouviere, Emmanuelle [Laboratoire des Composants Hybrides, LCH, CEA-DRT/LITEN/DTNM, 17 rue des martyrs, 38054 Grenoble Cedex (France)

    2008-07-01

    The increasingly demand on secondary batteries with higher specific energy densities requires the replacement of the actual electrode materials. With a very high theoretical capacity (4200 mAh g{sup -1}) at low voltage, silicon is presented as a very interesting potential candidate as negative electrode for lithium-ion microbatteries. For the first time, the electrochemical lithium alloying/de-alloying process is proven to occur, respectively, at 0.15 V/0.45 V vs. Li{sup +}/Li with Si nanowires (SiNWs, 200-300 nm in diameter) synthesized by chemical vapour deposition. This new three-dimensional architecture material is well suited to accommodate the expected large volume expansion due to the reversible formation of Li-Si alloys. At present, stable capacity over ten to twenty cycles is demonstrated. The storage capacity is shown to increase with the growth temperature by a factor 3 as the temperature varies from 525 to 575 C. These results, showing an attractive working potential and large storage capacities, open up a new promising field of research. (author)

  10. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu [ECE Department, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Kamins, T. I. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Wu, X.; Lockwood, D. J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

  11. Dramatic reduction of surface recombination by in situ surface passivation of silicon nanowires.

    Science.gov (United States)

    Dan, Yaping; Seo, Kwanyong; Takei, Kuniharu; Meza, Jhim H; Javey, Ali; Crozier, Kenneth B

    2011-06-08

    Nanowires have unique optical properties and are considered as important building blocks for energy harvesting applications such as solar cells. However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude, often resulting in the low efficiency (a few percent or less) of nanowire-based solar cells. Reducing the recombination by surface passivation is crucial for the realization of high-performance nanosized optoelectronic devices but remains largely unexplored. Here we show that a thin layer of amorphous silicon (a-Si) coated on a single-crystalline silicon nanowire, forming a core-shell structure in situ in the vapor-liquid-solid process, reduces the surface recombination nearly 2 orders of magnitude. Under illumination of modulated light, we measure a greater than 90-fold improvement in the photosensitivity of individual core-shell nanowires, compared to regular nanowires without shell. Simulations of the optical absorption of the nanowires indicate that the strong absorption of the a-Si shell contributes to this effect, but we conclude that the effect is mainly due to the enhanced carrier lifetime by surface passivation.

  12. Improvement of silicon nanowire solar cells made by metal catalyzed electroless etching and nano imprint lithography

    Science.gov (United States)

    Chen, Junyi; Subramani, Thiyagu; Jevasuwan, Wipakorn; Fukata, Naoki

    2017-04-01

    Silicon nanowires were fabricated by metal catalyzed electroless etching (MCEE) and nano imprint lithography (NIL), then a shell p-type layer was grown by thermal chemical vapor deposition (CVD) techniques. To reduce back surface recombination and also to activate the dopant, we used two techniques, back surface field (BSF) treatment and rapid thermal annealing (RTA), to improve device performance. In this study, we investigated BSF and RTA treatments in silicon nanowire solar cells, and improved the device performance and efficiency from 4.1 to 7.4% (MCEE device) and from 1.1 to 6.6% (NIL device) after introducing BSF and RTA treatments. Moreover, to achieve better metal contact without sacrificing the reflectance after the shell formation, the selective-area etching method was investigated. Finally, after combining all processes, silicon nanowire solar cells fabricated via the MCEE process exhibited 8.7% efficiency.

  13. Fabrication of carbon-coated silicon nanowires and their application in dye-sensitized solar cells.

    Science.gov (United States)

    Kim, Junhee; Lim, Jeongmin; Kim, Minsoo; Lee, Hae-Seok; Jun, Yongseok; Kim, Donghwan

    2014-11-12

    We report the fabrication of silicon/carbon core/shell nanowire arrays using a two-step process, involving electroless metal deposition and chemical vapor deposition. In general, foreign shell materials that sheath core materials change the inherent characteristics of the core materials. The carbon coating functionalized the silicon nanowire arrays, which subsequently showed electrocatalytic activities for the reduction of iodide/triiodide. This was verified by cyclic voltammetry and electrochemical impedance spectroscopy. We employed the carbon-coated silicon nanowire arrays in dye-sensitized solar cells as counter electrodes. We optimized the carbon shells to maximize the photovoltaic performance of the resulting devices, and subsequently, a peak power conversion efficiency of 9.22% was achieved.

  14. Porous silicon nanowire arrays decorated by Ag nanoparticles for surface enhanced Raman scattering study

    Science.gov (United States)

    Su, L.; Xu, H. J.; Chan, Y. F.; Sun, X. M.

    2012-02-01

    A large scale and highly ordered Ag nanoparticle-decorated porous silicon nanowire array was fabricated for a uniform and reproducible surface-enhanced Raman scattering (SERS) substrate. The overall process for the proposed structure is simple and reliable with the use of only chemical etching and metal reduction processes. The SERS sensitivity of the novel substrate as low as 10-16 M for rhodamine 6G (R6G) and the Raman enhancement factor as high as 10^14 were obtained. The excellent SERS performances were mainly attributed to the strong local electromagnetic effect which is associated with the formation of large-quantity Ag nanoparticles on porous silicon nanowire array and the existence of semiconductor silicon nanowires. Significantly, the quadratic relation between the logarithmic concentrations and the logarithmic integrated Raman peak intensities provided quantitative detection of R6G. Our results open new possibilities for applying SERS to trace detection of low-concentration biomolecules.

  15. Multichannel nonlinear distortion compensation using optical phase conjugation in a silicon nanowire

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Schoerder, Jochen; Da Ros, Francesco

    2015-01-01

    silicon nanowire. A clear improvement in Q-factor is shown after 800-km transmission with high span input power when comparing the system with and without the optical phase conjugation module. The influence of OSNR degradation introduced by the silicon nanowire is analysed by comparing transmission......We experimentally demonstrate compensation of nonlinear distortion caused by the Kerr effect in a 3 x 32-Gbaud quadrature phase-shift keying (QPSK) wavelength-division multiplexing (WDM) transmission system. We use optical phase conjugation (OPC) produced by four-wave mixing (FWM) in a 7-mm long...... systems of three different lengths. This is the first demonstration of nonlinear compensation using a silicon nanowire. (C)2015 Optical Society of America...

  16. Horizontal Silicon Nanowires with Radial p-n Junctions: A Platform for Unconventional Solar Cells.

    Science.gov (United States)

    Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; Celano, Thomas A; Cahoon, James F

    2013-06-20

    The silicon p-n junction is the most successful solar energy technology to date, yet it accounts for a marginal percentage of worldwide energy production. To change the status quo, a disruptive technological breakthrough is needed. In this Perspective, we discuss the potential for complex silicon nanowires to serve as a platform for next-generation photovoltaic devices. We review the synthesis, electrical characteristics, and optical properties of core/shell silicon nanowires that are subwavelength in diameter and contain radial p-n junctions. We highlight the unique features of these nanowires, such as optical antenna effects that concentrate light and intense built-in electric fields that enable ultrafast charge-carrier separation. We advocate a paradigm in which nanowires are arranged in periodic horizontal arrays to form ultrathin devices. Unlike conventional planar silicon, nanowire structures provide the flexibility to incorporate multiple semiconductor, dielectric, and metallic materials in a single system, providing the foundation for a disruptive, unconventional solar energy technology.

  17. Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

    KAUST Repository

    Cui, Li-Feng

    2009-09-09

    We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

  18. Solution-Grown Silicon Nanowires for Lithium-Ion Battery Anodes

    KAUST Repository

    Chan, Candace K.

    2010-03-23

    Composite electrodes composed of silicon nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) method mixed with amorphous carbon or carbon nanotubes were evaluated as Li-ion battery anodes. Carbon coating of the silicon nanowires using the pyrolysis of sugar was found to be crucial for making good electronic contact to the material. Using multiwalled carbon nanotubes as the conducting additive was found to be more effective for obtaining good cycling behavior than using amorphous carbon. Reversible capacities of 1500 mAh/g were observed for 30 cycles. © 2010 American Chemical Society.

  19. Silicon-Nanowire Based Lithium Ion Batteries for Vehicles With Double the Energy Density

    Energy Technology Data Exchange (ETDEWEB)

    Stefan, Ionel [Amprius, Inc., Sunnyvale, CA (United States); Cohen, Yehonathan [Amprius, Inc., Sunnyvale, CA (United States)

    2015-03-31

    Amprius researched and developed silicon nanowire anodes. Amprius then built and delivered high-energy lithium-ion cells that met the project’s specific energy goal and exceeded the project’s energy density goal. But Amprius’ cells did not meet the project’s cycle life goal, suggesting additional manufacturing process development is required. With DOE support, Amprius developed a new anode material, silicon, and a new anode structure, nanowire. During the project, Amprius also began to develop a new multi-step manufacturing process that does not involve traditional anode production processes (e.g. mixing, drying and calendaring).

  20. Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications.

    Science.gov (United States)

    M Nuzaihan, M N; Hashim, U; Md Arshad, M K; Rahim Ruslinda, A; Rahman, S F A; Fathil, M F M; Ismail, Mohd H

    2016-01-01

    A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications.

  1. A new architecture for self-organized silicon nanowire growth integrated on a left angle 100 right angle silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Buttard, D. [Universite Joseph Fourier/IUT-1, Grenoble (France); David, T.; Gentile, P. [CEA-Grenoble/SiNaPS-MINATEC, Grenoble (France); Hertog, M. den; Rouviere, J.L. [CEA-Grenoble/LEMMA-MINATEC, Grenoble (France); Baron, T. [CNRS/LTM, Grenoble (France); Ferret, P. [CEA-DRT/CEA-Grenoble/DOPT, Grenoble (France)

    2008-07-15

    A lithography-independent method for achieving self-organized growth of silicon nanowires by means of a Chemical-Vapor-Deposition process is investigated using a nanoporous alumina template on a left angle 100 right angle oriented silicon substrate. The position of the nanowires is determined by the location of gold colloids, acting as catalysts, which are initially deposited at the bottom of the pores over large areas of the sample. The direction of growth is guided by the pore axis, which is perpendicular to the silicon substrate surface. Results from scanning and transmission electron microscopy are presented and discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Surface states and conductivity of silicon nano-wires

    Science.gov (United States)

    Kumar Bhaskar, Umesh; Pardoen, Thomas; Passi, Vikram; Raskin, Jean-Pierre

    2013-04-01

    The transport characteristics of low dimensional semiconductors like silicon nano-wires (SiNWs) rarely conform to expectations from geometry and dopant density, exhibiting significant variations as a function of different surface terminations/conditions. The association of these mechanisms with surface states and their exact influence on practical SiNW devices still remains largely unclear. Herein, we report on the influence of surface state charge distributions on SiNW transport characteristics. For this study, p-type SiNW devices with widths of 50, 100, and 2000 nm are fabricated from 25, 50, and 200 nm-thick SOI wafers. A ˜five order difference in effective carrier concentration was observed in the initial SiNWs characteristics, when comparing SiNWs fabricated with and without a thermal oxide. The removal of the surface oxide by a hydrogen fluoride (HF) treatment results in a SiNW conductance drop up to ˜six orders of magnitude. This effect is from a surface depletion of holes in the SiNW induced by positive surface charges deposited as a result of the HF treatment. However, it is observed that this charge density is transient and is dissipated with the re-growth of an oxide layer. In summary, the SiNW conductance is shown to vary by several orders of magnitude, while comparing its characteristics for the three most studied surface conditions: with a native oxide, thermal oxide and HF induced H-terminations. These results emphasize the necessity to interpret the transport characteristics of SiNWs with respect to its surface condition, during future investigations pertaining to the physical properties of SiNWs, like its piezo-resistance. As a sequel, prospects for efficiently sensing an elementary reduction/oxidation chemical process by monitoring the variation of SiNW surface potential, or in practice the SiNW conductance, is demonstrated.

  3. A silicon carbide nanowire field effect transistor for DNA detection.

    Science.gov (United States)

    Fradetal, L; Bano, E; Attolini, G; Rossi, F; Stambouli, V

    2016-06-10

    This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

  4. Six-wave mixing induced by free-carrier plasma in silicon nanowire waveguides

    CERN Document Server

    Zhou, Heng; Huang, Shu-Wei; Zhou, Linjie; Qiu, Kun; Wong, Chee Wei

    2016-01-01

    Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third-order Kerr nonlinearity, enabling salient and abundant four-wave-mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two-photon absorption generates high free-carrier densities, with corresponding fifth-order nonlinearity in the forms of free-carrier dispersion and free-carrier absorption. However, whether these fifth-order free-carrier nonlinear effects can lead to six-wave-mixing dynamics still remains an open question until now. Here we report the demonstration of free-carrier-induced six-wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six-wave-mixing efficiency and its higher sensitivity to pump power, are originally observed and verfied by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for d...

  5. Effects of surface passivation by lithium on the mechanical and electronic properties of silicon nanowires

    Science.gov (United States)

    Salazar, F.; Pérez, L. A.; Cruz-Irisson, M.

    2016-12-01

    In this work, we present a density functional theory study of the mechanical and electronic properties of silicon nanowires (SiNWs) grown along the [111] crystallographic direction with a diamond structure and surface passivated with hydrogen (H) and lithium (Li) atoms. The study is performed within the local density approximation by applying the supercell method. The results indicate that the energy gap is a function of the Li concentration and the nanowire diameter. Furthermore, the Young's modulus (Y) increases as the nanowire diameter increases, consistent with experimental reports. The increase in the Li concentration at the surface leads to a larger Y value compared to the Y value of the completely H-passivated SiNWs, except for the thinner nanowires. Moreover, the structure of the latter nanowires experiences important changes when the Li concentration increases up to the maximum Li atoms per cell. These results demonstrate that it is possible to simultaneously control the energy gap and the Young's modulus by tuning the Li concentration on the surface of the SiNWs and could help to understand the structural changes that the silicon nanowire arrays experience during the lithiation process in Li batteries.

  6. 15% Power Conversion Efficiency from a Gated Nanotube/Silicon Nanowire Array Solar Cell

    Science.gov (United States)

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-03-01

    Despite their enhanced light trapping ability the performance of silicon nanowire array solar cells have, been stagnant with power conversion efficiencies barely breaking 10%. The problem is understood to be the consequence of a high photo-carrier recombination at the large surface area of the Si nanowire sidewalls. Here, by exploiting 1) electronic gating via an ionic liquid electrolyte to induce inversion in the n-type Si nanowires and 2) using a layer of single wall carbon nanotubes engineered to contact each nanowire tip and extract the minority carriers, we demonstrate silicon nanowire array solar cells with power conversion efficiencies of 15%. Our results allow for discrimination between the two principle means of avoiding front surface recombination: surface passivation and the use of local fields. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue a non-encapsulation based solution is also described. We gratefully acknowledge support from the National Science Foundation under ECCS-1232018.

  7. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires.

    Science.gov (United States)

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Roca i Cabarrocas, Pere

    2012-05-17

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  8. A thin silicon thermoelectric nanowire characterization platform (TNCP) equipped with nanoporous electrodes for electrical contact formation

    Science.gov (United States)

    Hoda Moosavi, S.; Kroener, Michael; Frei, Maxi; Frick, Fabian; Kerzenmacher, Sven; Woias, Peter

    2016-10-01

    We report on the fabrication of a silicon platform for the thermoelectric and structural characterization of single nanowires, equipped with nanoporous electrodes. Controlled wafer thinning to a thickness of 160 μm results in platform chips, which can be inserted into Transmission Electron Microscopes (TEM) for the nanowire's structural composition analysis. Our fabrication approach comprises the Bosch process (ICP), and "dicing before grinding" techniques to achieve this small thickness. To study the idea of developing a “plug-and-measure” platform, we have developed a novel approach for selfadhesion between a contact electrode and a nanowire by nanoporous electrodes. Due to the increased surface-to-volume ratio and increased van-der-Walls forces nanowires stick firmly to the electrodes for a good thermal and electrical connection. This innovative technique does also avoids, in best case, separate steps for contact formation.

  9. Ion-step method for surface potential sensing of silicon nanowires

    NARCIS (Netherlands)

    Chen, Songyue; Nieuwkasteele, van Jan W.; Berg, van den Albert; Eijkel, Jan C.T.

    2016-01-01

    This paper presents a novel stimulus-response method for surface potential sensing of silicon nanowire (Si NW) field-effect transistors. When an "ion-step" from low to high ionic strength is given as a stimulus to the gate oxide surface, an increase of double layer capacitance is therefore expected.

  10. Integrated label-free silicon nanowire sensor arrays for (bio)chemical analysis

    NARCIS (Netherlands)

    De, Arpita; Nieuwkasteele, van Jan; Carlen, Edwin T.; Berg, van den Albert

    2013-01-01

    We present a label-free (bio)chemical analysis platform that uses all-electrical silicon nanowire sensor arrays integrated with a small volume microfluidic flow-cell for real-time (bio)chemical analysis and detection. The integrated sensing platform contains an automated multi-sample injection syste

  11. Fluorinated alkyne-derived monolayers on oxide-free silicon nanowires via one-step hydrosilylation

    NARCIS (Netherlands)

    Nguyen, Quyen; Pujari, Sidharam P.; Wang, Bin; Wang, Zhanhua; Haick, Hossam; Zuilhof, Han; Rijn, van Cees J.M.

    2016-01-01

    Passivation of oxide-free silicon nanowires (Si NWs) by the formation of high-quality fluorinated 1-hexadecyne-derived monolayers with varying fluorine content has been investigated. Alkyl chain monolayers (C16H30−xFx) with a varying number of fluorine substituents (x = 0, 1, 3, 9, 17) were attached

  12. Growth parameters and shape specific synthesis of silicon nanowires by the VLS method

    Energy Technology Data Exchange (ETDEWEB)

    Latu-Romain, Laurence; Mouchet, Celine [CEA-Grenoble, LITEN/DTNM/LCH (France); Cayron, Cyril [CEA-Grenoble, LITEN/DTH/Grenoble Electron Microscopy-Minatec (France); Rouviere, Emmanuelle; Simonato, Jean-Pierre, E-mail: jean-pierre.simonato@cea.f [CEA-Grenoble, LITEN/DTNM/LCH (France)

    2008-12-15

    In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported.

  13. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

    NARCIS (Netherlands)

    Masood, Muhammad Nasir; Carlen, Edwin T.; Berg, van den Albert

    2014-01-01

    Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

  14. Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires

    DEFF Research Database (Denmark)

    Cleary, Ciaran S.; Ji, Hua; Dailey, James M.

    2013-01-01

    Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used...

  15. IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

    NARCIS (Netherlands)

    Moh, T.S.Y.

    2013-01-01

    In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive

  16. Specific and reversible immobilization of histidine-tagged proteins on functionalized silicon nanowires

    DEFF Research Database (Denmark)

    Liu, Yi-Chi; Rieben, Nathalie Ines; Iversen, Lars;

    2010-01-01

    Silicon nanowire (Si NW)-based field effect transistors (FETs) have shown great potential as biosensors (bioFETs) for ultra-sensitive and label-free detection of biomolecular interactions. Their sensitivity depends not only on the device properties, but also on the function of the biological reco...

  17. Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

    Science.gov (United States)

    Liu, Lin; Peng, Kui-Qing; Hu, Ya; Wu, Xiao-Ling; Lee, Shuit-Tong

    2014-03-05

    Macroscopic galvanic cell-driven metal catalyzed electroless etching (MCEE) of silicon in aqueous hydrofluoric acid (HF) solution is devised to fabricate silicon nanowire (SiNW) arrays with dissolved oxygen acting as the one and only oxidizing agent. The key aspect of this strategy is the use of a graphite or other noble metal electrode that is electrically coupled with silicon substrate.

  18. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    Science.gov (United States)

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  19. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  20. Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements

    Science.gov (United States)

    Lou, Liang; Zhang, Songsong; Park, Woo-Tae; Tsai, J. M.; Kwong, Dim-Lee; Lee, Chengkuo

    2012-05-01

    A pressure sensor with a 200 µm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiNx) and silicon oxide (SiO2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 µm SiNx layer is considered to be an optimized design in terms of small initial central deflection (0.1 µm), relatively high sensitivity (0.6% psi-1) and good linearity within our measurement range.

  1. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Sungho, E-mail: shwoo@dgist.ac.kr [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Hoon Jeong, Jae [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Soo Han, Yoon [Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongbuk 712-702 (Korea, Republic of); Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  2. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  3. Silicon Nanowires for All-Optical Signal Processing in Optical Communication

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua;

    2012-01-01

    to the large mode mismatch and index mismatch. Both end-coupling and grating-coupling solution utilizing nano-structures were demonstrated with optimized coupling efficiencies, which make the silicon on-chip nanowire devices more practical for real optical communication systems.......Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... process. In the last four years, we investigated and demonstrated different ultra-fast all-optical nonlinear signal processing applications in silicon nanowires for optical time domain multiplexing (OTDM) systems, including wavelength conversion, signal regeneration, ultra-fast waveform sampling...

  4. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  5. Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

    Directory of Open Access Journals (Sweden)

    Nicole Wollschläger

    2016-01-01

    Full Text Available Three-point bending tests were performed on double-anchored, 110 silicon nanowire samples in the vacuum chamber of a scanning electron microscope (SEM via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10 μm tall supports through a top-down fabrication approach involving a series of etching processes. The exact dimension of wire cross sections was determined by transmission electron microscopy (TEM. Conducting the experiments in an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which could then be taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for 110 silicon. Hence, test results neither show any size effect nor show evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. The results demonstrate the potential of the developed nanowire fabrication approach for the incorporation in functional micromechanical devices.

  6. Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires

    Science.gov (United States)

    Hainey, Mel; Eichfeld, Sarah M.; Shen, Haoting; Yim, Joanne; Black, Marcie R.; Redwing, Joan M.

    2015-05-01

    The growth of silicon nanowires in the ‹110› direction is reported using a vapor-liquid-solid mechanism with aluminum as the catalyst and SiH4 as the source gas in a low pressure chemical vapor deposition process. The effects of growth conditions on the yield of ‹110› versus ‹111› nanowires were investigated. Increasing reactor pressure beyond 300 Torr was found to improve ‹110› wire yield by suppressing vapor-solid thin film deposition on the nanowire sidewalls during growth that promoted nanowire kinking. Additionally, ‹110› growth was found to occur only at temperatures below the Al-Si eutectic temperature (577°C). At temperatures approximately equal to 577°C or higher, the preferential growth direction was observed to shift from ‹110› to ‹111›. The growth of ‹110› Si nanowires at sub-eutectic temperatures was attributed to a reduction in the silicon concentration in the catalyst droplet which promotes (110) surface nucleation and subsequent growth in the ‹110› direction.

  7. Enhanced lithium ion battery cycling of silicon nanowire anodes by template growth to eliminate silicon underlayer islands.

    Science.gov (United States)

    Cho, Jeong-Hyun; Picraux, S Tom

    2013-01-01

    It is well-known that one-dimensional nanostructures reduce pulverization of silicon (Si)-based anode materials during Li ion cycling because they allow lateral relaxation. However, even with improved designs, Si nanowire-based structures still exhibit limited cycling stability for extended numbers of cycles, with the specific capacity retention with cycling not showing significant improvements over commercial carbon-based anode materials. We have found that one important reason for the lack of long cycling stability can be the presence of milli- and microscale Si islands which typically form under nanowire arrays during their growth. Stress buildup in these Si island underlayers with cycling results in cracking, and the loss of specific capacity for Si nanowire anodes, due to progressive loss of contact with current collectors. We show that the formation of these parasitic Si islands for Si nanowires grown directly on metal current collectors can be avoided by growth through anodized aluminum oxide templates containing a high density of sub-100 nm nanopores. Using this template approach we demonstrate significantly enhanced cycling stability for Si nanowire-based lithium-ion battery anodes, with retentions of more than ~1000 mA·h/g discharge capacity over 1100 cycles.

  8. Dynamic characterization of silicon nanowires using a terahertz optical asymmetric demultiplexer-based pump-probe scheme

    DEFF Research Database (Denmark)

    Ji, Hua; Cleary, C. S.; Dailey, J. M.;

    2012-01-01

    Dynamic phase and amplitude all-optical responses of silicon nanowires are characterized using a terahertz optical asymmetric demultiplexer (TOAD) based pump-probe scheme. Ultra-fast recovery is observed for moderate pump powers....

  9. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    KAUST Repository

    Chan, Candace K.

    2009-04-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous LixSi compound. At potentials <50 mV, a structural transformation occurs. In studies on micron-sized particles previously reported in the literature, this transformation is a crystallization to a metastable Li15Si4 phase. X-ray diffraction measurements on the Si nanowires, however, show that they are amorphous, suggesting that a different amorphous phase (LiySi) is formed. Lithium is removed from this phase in the discharge to form amorphous silicon. We have found that limiting the voltage in the charge to 70 mV results in improved efficiency and cyclability compared to charging to 10 mV. This improvement is due to the suppression of the transformation at low potentials, which alloys for reversible cycling of amorphous silicon nanowires. © 2008 Elsevier B.V. All rights reserved.

  10. Versatile Particle-Based Route to Engineer Vertically Aligned Silicon Nanowire Arrays and Nanoscale Pores.

    Science.gov (United States)

    Elnathan, Roey; Isa, Lucio; Brodoceanu, Daniel; Nelson, Adrienne; Harding, Frances J; Delalat, Bahman; Kraus, Tobias; Voelcker, Nicolas H

    2015-10-28

    Control over particle self-assembly is a prerequisite for the colloidal templating of lithographical etching masks to define nanostructures. This work integrates and combines for the first time bottom-up and top-down approaches, namely, particle self-assembly at liquid-liquid interfaces and metal-assisted chemical etching, to generate vertically aligned silicon nanowire (VA-SiNW) arrays and, alternatively, arrays of nanoscale pores in a silicon wafer. Of particular importance, and in contrast to current techniques, including conventional colloidal lithography, this approach provides excellent control over the nanowire or pore etching site locations and decouples nanowire or pore diameter and spacing. The spacing between pores or nanowires is tuned by adjusting the specific area of the particles at the liquid-liquid interface before deposition. Hence, the process enables fast and low-cost fabrication of ordered nanostructures in silicon and can be easily scaled up. We demonstrate that the fabricated VA-SiNW arrays can be used as in vitro transfection platforms for transfecting human primary cells.

  11. Maxwell stress to explain the mechanism for the anisotropic expansion in lithiated silicon nanowires

    Science.gov (United States)

    Boone, Donald C.

    2016-12-01

    This computational research study attempts to explain the process that leads to volume expansion during insertion of lithium ions into a silicon nanowire. During lithiation, electrons flow through the nanowire in the opposing direction of lithium ions insertion. This causes an applied electromagnetic field which is described as being a quantum mechanical version of photon density wave theory. A series of events are calculated as the individual electrons and photons travels through the lithiated silicon nanowire. The hypothesis that will be presented employs the Maxwell stress tensor to calculate the refractive indices in three orthogonal directions during lithiation. The quantum harmonic oscillator and the electromagnetic intensity will be utilized in this presentation to calculate the energy of electrons and optical amplification of the electromagnetic field respectively. The main focus of this research study will use electron scattering theory, spontaneous and stimulated emission theory to model the breaking of cohesion bonds between silicon atoms that ultimately leads to excessive volume expansion that is witnessed during the lithiation process in Si nanowires.

  12. CMOS-Compatible Silicon-Nanowire-Based Coulter Counter for Cell Enumeration.

    Science.gov (United States)

    Chen, Yu; Guo, Jinhong; Muhammad, Hamidullah; Kang, Yuejun; Ary, Sunil K

    2016-02-01

    A silicon-nanowire-based Coulter counter has been designed and fabricated for particle/cell enumeration. The silicon nanowire was fabricated in a fully complementary metal-oxide-semiconductor (CMOS)-compatible process and used as a field effect transistor (FET) device. The Coulter counter device worked on the principle of potential change detection introduced by the passing of microparticles/cells through a sensing channel. Device uniformity was confirmed by scanning electron microscopy and transmission electron microscopy. Current-voltage measurement showed the high sensitivity of the nanowire FET device to the surface potential change. The results revealed that the silicon-nanowire-based Coulter counter can differentiate polystyrene beads with diameters of 8 and 15 μm. Michigan Cancer Foundation-7 (MCF-7) cells have been successfully counted to validate the device. A fully CMOS-compatible fabrication process can help the device integration and facilitate the development of sensor arrays for high throughput application. With appropriate sample preparation steps, it is also possible to expand the work to applications such as rare-cells detection.

  13. Exploring Direct to Indirect Bandgap Transition in Silicon Nanowires: Size Effect

    Science.gov (United States)

    Shi, Lihong; Zhang, Gang

    2016-10-01

    We have investigated the electronic band structure of [110] silicon nanowires (SiNWs) using first-principles calculations. We find that, in the ultrathin diameter regime, SiNWs have a direct bandgap, but the energy difference between the indirect and direct fundamental bandgaps decreases as the nanowire diameter increases. This indicates that larger [110] SiNWs could have an indirect bandgap. Fundamentally, a series of quantitative direct-indirect bandgap transitional diameters are obtained for different cross-sectional geometries, with the largest values for SiNWs with triangular cross section.

  14. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    with nanowire sensors functionalized using different modification schemes. To facilitate functionalization and measurement and as a first step towards integration into a point-of-care device, several microfluidic tools were developed for sample delivery to the sensor surface and as a modular platform......This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project...

  15. Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection

    Directory of Open Access Journals (Sweden)

    P. Pignalosa

    2011-09-01

    Full Text Available Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm and wide angle (from normal incidence to 60º antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

  16. Reversible Strain-Induced Electron-Hole Recombination in Silicon Nanowires Observed with Femtosecond Pump-Probe Microscopy

    Science.gov (United States)

    2014-01-01

    optoelectronic devices that rely on long charge carrier lifetimes, such as nanostructured solar cells . Further studies of the effects of strain on the carrier...resolution and submicron spatial resolution to characterize charge–carrier recombination and transport dynamics in silicon nanowires (NWs) locally strained...release; distribution is unlimited. Reversible Strain-Induced Electron–Hole Recombination in Silicon Nanowires Observed with Femtosecond Pump–Probe

  17. 40 Gbit/s serial data signal regeneration using self-phase modulation in a silicon nanowire

    DEFF Research Database (Denmark)

    Ji, Hua; Wang, Ju; Hu, Hao

    2012-01-01

    We experimentally demonstrate self-phase modulation based all-optical regeneration of a 40 Gbit/s serial data signal in a silicon nanowire. Bit error rate characterization shows 2 dB receiver power improvement.......We experimentally demonstrate self-phase modulation based all-optical regeneration of a 40 Gbit/s serial data signal in a silicon nanowire. Bit error rate characterization shows 2 dB receiver power improvement....

  18. Wavelength Conversion with Large Signal-Idler Separation using Discrete Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Hu, Hao; Peucheret, Christophe; Pu, Minhao;

    2012-01-01

    We have demonstrated wavelength conversion over 468 nm based on discrete bands phase matching in a silicon nanowire. CW light is converted from 1258 nm to 1726 nm with a CW pump at 1455 nm.......We have demonstrated wavelength conversion over 468 nm based on discrete bands phase matching in a silicon nanowire. CW light is converted from 1258 nm to 1726 nm with a CW pump at 1455 nm....

  19. Broadband Polarization-Insensitive Wavelength Conversion Based on Non-Degenerate Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua

    2012-01-01

    We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements....

  20. The influence of H2O2 concentration to the structure of silicon nanowire growth by metal-assisted chemical etching

    Science.gov (United States)

    Omar, Hafsa; Jani, Abdul Mutalib Md.; Rusop, Mohamad; Abdullah, Saifollah

    2016-07-01

    A simple and low cost method to produce well aligned silicon nanowires at large areas using Ag-assisted chemical etching at room temperature were presented. The structure of silicon nanowires growth by metal-assisted chemical etching was observed. Prior to the etching, the silicon nanowires were prepared by electroless metal deposited (EMD) in solution containing hydrofluoric acid and hydrogen peroxide in Teflon vessel. The silver particle was deposited on substrate by immersion in hydrofluoric acid and silver nitrate solution for sixty second. The silicon nanowires were growth in different hydrogen peroxide concentration which are 0.3M, 0.4M, 0.5M and 0.6M and 0.7M.The influence of hydrogen peroxide concentration to the formation of silicon nanowires was studied. The morphological properties of silicon nanowires were investigated using field emission scanning electron microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDS).

  1. Growth and properties of In(Ga)As nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hertenberger, Simon

    2012-10-15

    In this thesis the integration of III-V semiconductor nanowires on silicon (Si) platform by molecular beam epitaxy (MBE) is investigated. All nanowires are grown without the use of foreign catalysts such as Au to achieve high purity material. First, InAs nanowires are grown in a self-assembled manner on SiO{sub x}-masked Si(111) where pinholes in the silicon oxide serve as nucleation spots for the nanowires. This leads to the growth of vertically aligned, (111)-oriented nanowires with hexagonal cross-section. Based on this simple process, the entire growth parameter window is investigated for InAs nanowires, revealing an extremely large growth temperature range from 380 C to 580 C and growth rates as large as 6 μ/h. Complex quantitative in-situ line-of-sight quadrupole mass spectrometry experiments during nanowire growth and post-growth thermal decomposition studies support these findings and indicate a very high thermal stability up to >540 C for InAs nanowires. Furthermore, the influence of the As/In ratio on the nanowire growth is studied revealing two distinct growth regimes, i.e., an In-rich regime for lower As fluxes and an As-rich regime for larger As fluxes, where the latter shows characteristic saturation of the nanowire aspect ratio. For the catalyst-free growth, detailed investigation of the growth mechanism is performed via a combination of in-situ reflection high-energy electron diffraction (RHEED) and ex-situ scanning and transmission electron microscopy (SEM,TEM). An abrupt onset of nanowire growth is observed in RHEED intensity and in-plane lattice parameter evolution. Furthermore, completely droplet-free nanowires, continuous radial growth, constant vertical growth rate and growth interruption experiments suggest a vapor-solid growth mode for all investigated nanowire samples. Moreover, site-selective (positioned) growth of InAs nanowires on pre-patterned SiO{sub 2} masked Si(111) substrates is demonstrated which is needed for ultimate control of

  2. Enhanced photocatalytic degradation of methylene blue by metal-modified silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Brahiti, N., E-mail: dihiabrahiti@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique (CRTSE), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 Merveilles, Alger (Algeria); Université Mouloud MAMMERI de TiziOuzou, Département de Physique, Bastos (Algeria); Hadjersi, T., E-mail: hadjersi@gmx.com [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique (CRTSE), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 Merveilles, Alger (Algeria); Menari, H. [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique (CRTSE), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 Merveilles, Alger (Algeria); Amirouche, S.; El Kechai, O. [Université Mouloud MAMMERI de TiziOuzou, Département de Physique, Bastos (Algeria)

    2015-02-15

    Highlights: • SiNWs modified with Pd, Au and Pt were used as photocatalysts to degrade MB. • Yield of photodegardation increases with UV irradiation time. • SiNWs modified with Pd nanoparticles show the best photocatalytic activity. • A degradation of 97% was obtained after 200 min of UV irradiation. - Abstract: Silicon nanowires (SiNWs) modified with Au, Pt and Pd nanoparticles were used as heterogeneous photocatalysts for the photodegradation of methylene blue in water under UV light irradiation. The modification of SiNWs was carried out by deposition of metal nanoparticles using the electroless metal deposition (EMD) technique. The effect of metal nanoparticles deposition time on the photocatalytic activity was studied. It was found that the photocatalytic activity of modified SiNWs was enhanced when the deposition time of metal nanoparticles was increased. In addition of modified SiNWs with Pt, Au and Pd nanoparticles, oxidized silicon substrate (Ox-Si), oxidized silicon nanowires (Ox-SiNWs) and hydrogen-terminated silicon nanowires (H-SiNWs) were also evaluated for the photodegradation of methylene blue.

  3. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  4. Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.

    Science.gov (United States)

    Zhang, Jun; Zhang, Lide; Jiang, Feihong; Yang, Yongdong; Li, Jianping

    2005-01-13

    Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.

  5. Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Uchida, Takafumi, E-mail: takafumi-uchida@frontier.hokudai.ac.jp; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo [Graduate School of Information Science and Technology, Hokkaido University, Sapporo, 060-0814 Japan (Japan); Fujiwara, Akira [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, 243-0198 Japan (Japan)

    2015-11-15

    Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.

  6. Local and CMOS-compatible synthesis of CuO nanowires on a suspended microheater on a silicon substrate.

    Science.gov (United States)

    Zhang, Kaili; Yang, Yang; Pun, E Y B; Shen, Ruiqi

    2010-06-11

    This paper presents the synthesis of CuO nanowires using a localized thermal heating method in ambient air. It employs local heat sources defined in micro-resistive heaters fabricated by a standard polysilicon-based surface micromachining process instead of a global furnace heating. Since the synthesis is performed globally at room temperature, the presented process is compatible with standard CMOS. The synthesized CuO nanowires are characterized by scanning electron microscopy, transmission electron microscopy and high resolution transmission electron microscopy. It is found that this approach provides a simple method to locally synthesize suspended CuO nanowires on polysilicon microbridges on silicon substrates, thus allowing for integration of CuO nanowires into silicon-based devices. It provides a significant step towards the process integration of CuO nanowires with MEMS to realize functional devices.

  7. Bio-functionalization of silicon carbide nanostructures for SiC nanowire-based sensors realization.

    Science.gov (United States)

    Fradetal, L; Stambouli, V; Bano, E; Pelissier, B; Choi, J H; Ollivier, M; Latu-Romain, L; Boudou, T; Pignot-Paintrand, I

    2014-05-01

    The bio-functionalization process consisting in grafting desoxyribo nucleic acid via aminopropyl-triethoxysilane is performed on several kinds of silicon carbide nanostructures. Prior, the organic layer is characterized on planar surface with fluorescence microscopy and X-ray photoelectron spectroscopy. Then, the functionalization is performed on two kinds of nanopillar arrays. One is composed of top-down SiC nanopillars with a wide pitch of 5 microm while the other one is a dense array (pitch: 200 nm) of core-shell Si-SiC nanowires obtained by carburization of silicon nanowires. Depending on both the pillar morphology and the pitch, different results in term of DNA surface coverages are obtained, as seen from fluorescence microscopy images. Particularly, in the case of the wide pitch array, it has been shown that the DNA molecules are located all along the nanopillars. To achieve a DNA sensor based on a nanowire-field effect transistor, the functionalization must be conducted on a single SiC nanowire or nanopillar that constitutes the channel of the field effect transistor. The localization of the functionalization in a small area around the nanostructures guarantees high performances to the sensor. In this aim, the functionalization process is combined with common microelectronics techniques of lithography and lift-off. The DNA immobilization is investigated by fluorescence microscopy and atomic force microscopy.

  8. The rise of plastic bioelectronics

    Science.gov (United States)

    Someya, Takao; Bao, Zhenan; Malliaras, George G.

    2016-12-01

    Plastic bioelectronics is a research field that takes advantage of the inherent properties of polymers and soft organic electronics for applications at the interface of biology and electronics. The resulting electronic materials and devices are soft, stretchable and mechanically conformable, which are important qualities for interacting with biological systems in both wearable and implantable devices. Work is currently aimed at improving these devices with a view to making the electronic-biological interface as seamless as possible.

  9. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    Energy Technology Data Exchange (ETDEWEB)

    He Ying, E-mail: yinghe@staff.shu.edu.c [Shanghai University, Department of Polymer Materials, School of Materials Science and Engineering (China); Wang Junan [Shanghai University, Institute of Materials, School of Materials Science and Engineering (China); Pei Changlong; Song Jizhong; Zhu Di; Chen Jie [Shanghai University, Department of Polymer Materials, School of Materials Science and Engineering (China)

    2010-10-15

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  10. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    Science.gov (United States)

    He, Ying; Wang, Jun-An; Pei, Chang-Long; Song, Ji-Zhong; Zhu, Di; Chen, Jie

    2010-10-01

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  11. Enhancing flow boiling heat transfer in microchannels for thermal management with monolithically-integrated silicon nanowires.

    Science.gov (United States)

    Li, D; Wu, G S; Wang, W; Wang, Y D; Liu, Dong; Zhang, D C; Chen, Y F; Peterson, G P; Yang, Ronggui

    2012-07-11

    Thermal management has become a critical issue for high heat flux electronics and energy systems. Integrated two-phase microchannel liquid-cooling technology has been envisioned as a promising solution, but with great challenges in flow instability. In this work, silicon nanowires were synthesized in situ in parallel silicon microchannel arrays for the first time to suppress the flow instability and to augment flow boiling heat transfer. Significant enhancement in flow boiling heat transfer performance was demonstrated for the nanowire-coated microchannel heat sink, such as an early onset of nucleate boiling, a delayed onset of flow oscillation, suppressed oscillating amplitudes of temperature and pressure drop, and an increased heat transfer coefficient.

  12. The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor.

    Science.gov (United States)

    Choi, Hyoun Mo; Shin, Dong Jae; Lee, Jung Han; Mo, Hyun-Sun; Park, Tae Jung; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan; Park, Jisun

    2016-05-01

    Our study investigates differences in sensitivity of dry and wet environment in the field of biosensing experiment in detail and depth. The sensitivity of biosensing varies by means of surrounding conditions of silicon nanowire field effect transistor (SiNW FET). By examining charged polymer reaction in the silicon nanowire transistor (SiNW), we have discovered that the threshold voltage (V(T)) shift and change of subthreshold slope (SS) in wet environment are smaller than that of the air. Furthermore, we analyzed the sensitivity through modifying electrolyte concentration in the wet condition, and confirmed that V(T) shift increases in low concentration condition of phosphate buffered saline (PBS) due to the Debye length. We believe that the results we have found in this study would be the cornerstone in contributing to advanced biosensing experiment in the future.

  13. Fluorinated alkyne-derived monolayers on oxide-free silicon nanowires via one-step hydrosilylation

    Science.gov (United States)

    Nguyen Minh, Quyen; Pujari, Sidharam P.; Wang, Bin; Wang, Zhanhua; Haick, Hossam; Zuilhof, Han; van Rijn, Cees J. M.

    2016-11-01

    Passivation of oxide-free silicon nanowires (Si NWs) by the formation of high-quality fluorinated 1-hexadecyne-derived monolayers with varying fluorine content has been investigated. Alkyl chain monolayers (C16H30-xFx) with a varying number of fluorine substituents (x = 0, 1, 3, 9, 17) were attached onto hydrogen-terminated silicon (Sisbnd H) surfaces with an effective one-step hydrosilylation. This surface chemistry gives well-defined monolayers on nanowires that have a cylindrical core-shell structure, as characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and static contact angle (SCA) analysis. The monolayers were stable under acidic and basic conditions, as well as under extreme conditions (such as UV exposure), and provide excellent surface passivation, which opens up applications in the fields of field effect transistors, optoelectronics and especially for disease diagnosis.

  14. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

    Directory of Open Access Journals (Sweden)

    Wen-Chung Chang

    2016-06-01

    Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

  15. Critical Role of Diels-Adler Adducts to Realise Stretchable Transparent Electrodes Based on Silver Nanowires and Silicone Elastomer

    Science.gov (United States)

    Heo, Gaeun; Pyo, Kyoung-Hee; Lee, Da Hee; Kim, Youngmin; Kim, Jong-Woong

    2016-05-01

    This paper presents the successful fabrication of a transparent electrode comprising a sandwich structure of silicone/Ag nanowires (AgNWs)/silicone equipped with Diels-Alder (DA) adducts as crosslinkers to realise highly stable stretchability. Because of the reversible DA reaction, the crosslinked silicone successfully bonds with the silicone overcoat, which should completely seal the electrode. Thus, any surrounding liquid cannot leak through the interfaces among the constituents. Furthermore, the nanowires are protected by the silicone cover when they are stressed by mechanical loads such as bending, folding, and stretching. After delicate optimisation of the layered silicone/AgNW/silicone sandwich structure, a stretchable transparent electrode which can withstand 1000 cycles of 50% stretching-releasing with an exceptionally high stability and reversibility was fabricated. This structure can be used as a transparent strain sensor; it possesses a strong piezoresistivity with a gauge factor greater than 11.

  16. Growth and Characterization of Silicon Carbide (SiC) Nanowires by Chemical Vapor Deposition (CVD) for Electronic Device Applications

    Science.gov (United States)

    Moore, Karina

    In recent years nanowires have gained a generous amount of interest because of the possible application of nanowires within electronic devices. A nanowire is a one dimensional semiconductor nanostructure with a diameter less than 100 nm. Nanowires have the potential to be a replacement for the present day complimentary metal oxide semiconductor (CMOS) technology; it is believed by 2020, a 5--6 nm gate length within field effect transistors (FET) would be realized and cease further miniaturization of electronic devices. SiC processes several unique chemical and physical properties that make it an attractive alternative to Si as a semiconductor material. Silicon carbide's properties make it a perfect candidate for applications such as high temperature sensors, x-ray emitters and high radiation sensors. The main objective of this thesis is to successfully grow silicon carbide nanowires on silicon substrates with the assistance of a metal catalyst, by the process of chemical vapor deposition (CVD). The contributions made by the work carried out in this thesis are broad. This is the first study that has carried out a comprehensive investigation into a wide range of metal catalyst for the growth of SiC nanowires by the process of chemical vapor deposition. The study proved that the surface tension interactions between the silicon substrate and the metal catalyst are the controlling factor in the determination of the diameter of the nanowires grown. This study also proved that the silicon substrate orientation has no impact on the growth of the nanowires, similar growth patterns occurred on both Si and Si substrates. The nanowires grown were characterized by a variety of different methods including scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and raman spectroscopy. The effect of temperature, growth temperature, growth time and the catalyst type used are investigated to determine the most suitable conditions necessary for SiC nanowire

  17. Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Jun-Sik; Kim, Kihyun; Baek, Chang-Ki

    2017-01-01

    We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8 nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60 mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0 V. These devices are promising for low-power applications at low fabrication cost and high device density. PMID:28112273

  18. Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Jun-Sik; Kim, Kihyun; Baek, Chang-Ki

    2017-01-01

    We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8 nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60 mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0 V. These devices are promising for low-power applications at low fabrication cost and high device density.

  19. Tunable electronic properties of silicon nanowires under strain and electric bias

    Directory of Open Access Journals (Sweden)

    Alexis Nduwimana

    2014-07-01

    Full Text Available The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

  20. Tunable electronic properties of silicon nanowires under strain and electric bias

    Energy Technology Data Exchange (ETDEWEB)

    Nduwimana, Alexis [Department of Physics and Center for Functional Nanoscale Materials, Clark Atlanta University, Atlanta, Georgia 30314 (United States); Georgia Perimeter College, Decatur, Georgia 30034 (United States); Wang, Xiao-Qian, E-mail: xwang@cau.edu [Department of Physics and Center for Functional Nanoscale Materials, Clark Atlanta University, Atlanta, Georgia 30314 (United States)

    2014-07-15

    The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

  1. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Zhaoyun [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Jiangsu University of Science and Technology, Zhenjiang 212003, Jiangsu Province (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2015-04-15

    Highlights: • We introduce an intermediate cadmium telluride quantum dots (CdTe QDs) layer between the organic with silicon nanowires of hybrid solar cells as a down-shifting layer. • The hybrid solar cell got the maximum short circuit current density of 33.5 mA/cm{sup 2}, getting an increase of 15.1% comparing to solar cell without CdTe QDs. • The PCE of the hybrid solar cells with CdTe QDs layer increases 28.8%. - Abstract: We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density–voltage (J–V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (J{sub sc}) of solar cells with CdTe QDs layer can reach 33.5 mA/cm{sup 2}. Compared with the solar cells without CdTe QDs, J{sub sc} has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  2. Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a Silicon nanowire

    CERN Document Server

    Casas-Bedoya, Alvaro; Pagani, Mattia; Marpaung, David; Eggleton, Benjamin J

    2015-01-01

    We demonstrate the first functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip SBS gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high performance RF photonic filter.

  3. Electron and phonon transport in silicon nanowires: Atomistic approach to thermoelectric properties

    DEFF Research Database (Denmark)

    Markussen, Troels; Jauho, Antti-Pekka; Brandbyge, Mads

    2009-01-01

    We compute both electron and phonon transmissions in thin disordered silicon nanowires (SiNWs). Our atomistic approach is based on tight-binding and empirical potential descriptions of the electronic and phononic systems, respectively. Surface disorder is modeled by introducing surface silicon...... apply this averaging method to surface disordered SiNWs in the diameter range of 1–3 nm to compute the thermoelectric figure of merit ZT. It is found that the phonon transmission is affected more by the vacancies than the electronic transmission leading to an increased thermoelectric performance...

  4. Design of a plasmonic back reflector for silicon nanowire decorated solar cells.

    Science.gov (United States)

    Ren, Rui; Guo, Yongxin; Zhu, Rihong

    2012-10-15

    This Letter presents a crystalline silicon thin film solar cell model with Si nanowire arrays surface decoration and metallic nanostructure patterns on the back reflector. The nanostructured Ag back reflector can significantly enhance the absorption in the near-infrared spectrum. Furthermore, by inserting a ZnO:Al layer between the silicon substrate and nanostructured Ag back reflector, the absorption loss in the Ag back reflector can be clearly depressed, contributing to a maximum J(sc) of 28.4 mA/cm(2). A photocurrent enhancement of 22% is achieved compared with a SiNW solar cell with a planar Ag back reflector.

  5. Nanoparticles prepared from porous silicon nanowires for bio-imaging and sonodynamic therapy.

    Science.gov (United States)

    Osminkina, Liubov A; Sivakov, Vladimir A; Mysov, Grigory A; Georgobiani, Veronika A; Natashina, Ulyana А; Talkenberg, Florian; Solovyev, Valery V; Kudryavtsev, Andrew A; Timoshenko, Victor Yu

    2014-01-01

    Evaluation of cytotoxicity, photoluminescence, bio-imaging, and sonosensitizing properties of silicon nanoparticles (SiNPs) prepared by ultrasound grinding of porous silicon nanowires (SiNWs) have been investigated. SiNWs were formed by metal (silver)-assisted wet chemical etching of heavily boron-doped (100)-oriented single crystalline silicon wafers. The prepared SiNWs and aqueous suspensions of SiNPs exhibit efficient room temperature photoluminescence (PL) in the spectral region of 600 to 1,000 nm that is explained by the radiative recombination of excitons confined in small silicon nanocrystals, from which SiNWs and SiNPs consist of. On the one hand, in vitro studies have demonstrated low cytotoxicity of SiNPs and possibilities of their bio-imaging applications. On the other hand, it has been found that SiNPs can act as efficient sensitizers of ultrasound-induced suppression of the viability of Hep-2 cancer cells.

  6. Technology for fabrication of sub-20 nm silicon planar nanowires array

    Science.gov (United States)

    Miakonkikh, Andrey V.; Tatarintsev, Andrey A.; Rogozhin, Alexander E.; Rudenko, Konstantin V.

    2016-12-01

    The results presented on Silicon one-dimensional structures fabrication which are promising for application in nanoelectronics, sensors, THz-applications. We employ two-stage technology of precise anizotropic plasma etching of silicon over e-beam resist and isotropic removal of thermally oxidised defected surface layer of silicon by wet etch. As first the process for nano-fins fabrication on SOI substrate was developed. HSQ resist was used as a negative-tone electron beam resist with good etch-resistance, high resolution and high mechanical stability. The etching was performed by RIE in mix of SF6 + C4F8. plasma. By changing the ratio SF6:C4F8, the sidewall profile angle can be controlled thoroughly. Next step to minimize lateral size of structures and reduce impact of surface defects on electron mobility in core of nanowires was the application of surface thermal oxidation to defected layer. It was used for selective removal of damaged silicon layer and polymer residues. Oxidation was performed with controlled flow of dry oxygen and water vapour. Oxidation rate was precisely controlled by ex-situ spectral ellipsometry on unpatterned chips As a result the arrays of planar sub-20 nm Silicon nanowires with length in the range 200 nm - 500 um were made.

  7. Probing ultrafast carrier dynamics, nonlinear absorption and refraction in core–shell silicon nanowires

    Indian Academy of Sciences (India)

    Sunil Kumar; M Khorasaninejad; M M Adachi; K S Karim; S S Saini; A K Sood

    2012-09-01

    We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time resolved differential reflectivity and transmission spectroscopy at 3.15 eV and 1.57 eV photon energies. The complex behaviour of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where competing effects of state-filling and photoinduced absorption govern the carrier dynamics. Faster relaxation rates are observed on increasing the photogenerated carrier density. Independent experimental results on crystalline silicon-on-sapphire (SOS) help us in separating the contributions from the carrier dynamics in crystalline core and the amorphous regions in the nanowire samples. Further, single-beam z-scan nonlinear transmission experiments at 1.57 eV in both open- and close-aperture configurations yield two-photon absorption coefficient (∼3 cm/GW) and nonlinear refraction coefficient (−2.5 × 10−4 cm2 /GW).

  8. Ultra-low reflection porous silicon nanowires for solar cell applications

    KAUST Repository

    Najar, Adel

    2012-01-01

    High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. ©2012 Optical Society of America.

  9. Electrical detection of dengue virus (DENV) DNA oligomer using silicon nanowire biosensor with novel molecular gate control.

    Science.gov (United States)

    Nuzaihan M N, M; Hashim, U; Md Arshad, M K; Kasjoo, S R; Rahman, S F A; Ruslinda, A R; Fathil, M F M; Adzhri, R; Shahimin, M M

    2016-09-15

    In this paper, a silicon nanowire biosensor with novel molecular gate control has been demonstrated for Deoxyribonucleic acid (DNA) detection related to dengue virus (DENV). The silicon nanowire was fabricated using the top-down nanolithography approach, through nanostructuring of silicon-on-insulator (SOI) layers achieved by combination of the electron-beam lithography (EBL), plasma dry etching and size reduction processes. The surface of the fabricated silicon nanowire was functionalized by means of a three-step procedure involving surface modification, DNA immobilization and hybridization. This procedure acts as a molecular gate control to establish the electrical detection for 27-mers base targets DENV DNA oligomer. The electrical detection is based on the changes in current, resistance and conductance of the sensor due to accumulation of negative charges added by the immobilized probe DNA and hybridized target DNA. The sensitivity of the silicon nanowire biosensors attained was 45.0µAM(-1), which shows a wide-range detection capability of the sensor with respect to DNA. The limit of detection (LOD) achieved was approximately 2.0fM. The demonstrated results show that the silicon nanowire has excellent properties for detection of DENV with outstanding repeatability and reproducibility performances.

  10. Thermal Test of an Improved Platform for Silicon Nanowire-Based Thermoelectric Micro-generators

    Science.gov (United States)

    Calaza, C.; Fonseca, L.; Salleras, M.; Donmez, I.; Tarancón, A.; Morata, A.; Santos, J. D.; Gadea, G.

    2016-03-01

    This work reports on an improved design intended to enhance the thermal isolation between the hot and cold parts of a silicon-based thermoelectric microgenerator. Micromachining techniques and silicon on insulator substrates are used to obtain a suspended silicon platform surrounded by a bulk silicon rim, in which arrays of bottom-up silicon nanowires are integrated later on to join both parts with a thermoelectric active material. In previous designs the platform was linked to the rim by means of bulk silicon bridges, used as mechanical support and holder for the electrical connections. Such supports severely reduce platform thermal isolation and penalise the functional area due to the need of longer supports. A new technological route is planned to obtain low thermal conductance supports, making use of a particular geometrical design and a wet bulk micromachining process to selectively remove silicon shaping a thin dielectric membrane. Thermal conductance measurements have been performed to analyse the influence of the different design parameters of the suspended platform (support type, bridge/membrane length, separation between platform and silicon rim,) on overall thermal isolation. A thermal conductance reduction from 1.82 mW/K to 1.03 mW/K, has been obtained on tested devices by changing the support type, even though its length has been halved.

  11. Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hao; Han, Weihua, E-mail: weihua@semi.ac.cn; Li, Xiaoming; Zhang, Yanbo; Yang, Fuhua [Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-09-28

    We demonstrate temperature-dependent quantum transport characteristics in silicon junctionless nanowire transistor fabricated on Silicon-on-Insulator substrate by the femtosecond laser lithography. Clear drain-current oscillations originated from dopant-induced quantum dots are observed in the initial stage of the conduction for the silicon nanowire channel at low temperatures. Arrhenius plot of the conductance indicates the transition temperature of 30 K from variable-range hopping to nearest-neighbor hopping, which can be well explained under Mott formalism. The transition of electron hopping behavior is the interplay result between the thermal activation and the Coulomb interaction.

  12. Electrowetting properties of atomic layer deposited Al{sub 2}O{sub 3} decorated silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Rajkumar, K.; Rajavel, K. [Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu (India); Cameron, D. C. [ASTRaL, Lappeenranta University of Technology, Mikkeli (Finland); current address Miktech Oy, Mikkeli (Finland); Mangalaraj, D. [Department of NanoScience and Technology, Bharathiar University, Coimbatore, Tamil Nadu (India); Rajendrakumar, R. T., E-mail: buc@edu.in [Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu (India); Department of NanoScience and Technology, Bharathiar University, Coimbatore, Tamil Nadu (India)

    2015-06-24

    This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al{sub 2}O{sub 3} as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al{sub 2}O{sub 3} films of 10nm thickness were conformally deposited over silicon nanowires. Al{sub 2}O{sub 3} dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.

  13. Improved thermal isolation of silicon suspended platforms for an all-silicon thermoelectric microgenerator based on large scale integration of Si nanowires as thermoelectric material

    Science.gov (United States)

    Fonseca, L.; Donmez, I.; Salleras, M.; Calaza, C.; Gadea, G.; Santos, J. D.; Morata, A.; Tarancon, A.

    2015-12-01

    Special suspended micro-platforms have been designed as a part of silicon compatible planar thermoelectric microgenerators. Bottom-up grown silicon nanowires are going to bridge in the future such platforms to the surrounding silicon bulk rim. They will act as thermoelectric material thus configuring an all-silicon thermoelectric device. In the new platform design other additional bridging elements (usually auxiliary support silicon beams) are substituted by low conductance thin film dielectric membranes in order to maximize the temperature difference developed between both areas. These membranes follow a sieve-like design that allows fabricating them with a short additional wet anisotropic etch step.

  14. Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

    Science.gov (United States)

    2016-08-19

    optoelectronic devi- ces. Due to silicon’s high refractive index, silicon nanowires exhibit strong resonant field enhancement to incident light when the...show that the field factor for conical emitters follows the form β=k/r n. By fitting an equation of that form to the field factors extracted from the... conical field emitters. I IEEE Trans. Electron Devices 48 134–43 [38] Jensen K L, Zaidman E G, Kodis M A, Goplen B and Smithe D N 1996 Analytical and

  15. A room temperature light source based on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Lo Faro, M.J. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); D' Andrea, C. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Messina, E.; Fazio, B. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); Musumeci, P. [Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); Franzò, G. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Gucciardi, P.G.; Vasi, C. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); Priolo, F. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); Scuola Superiore di Catania, Via Valdisavoia 9, 95123 Catania (Italy); Iacona, F. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Irrera, A., E-mail: irrera@me.cnr.it [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy)

    2016-08-31

    We synthesized ultrathin Si nanowires (NWs) by metal assisted chemical wet etching, using a very thin discontinuous Au layer as precursor for the process. A bright room temperature emission in the visible range due to electron–hole recombination in quantum confined Si NWs is reported. A single walled carbon nanotube (CNT) suspension was prepared and dispersed in Si NW samples. The hybrid Si NW/CNT system exhibits a double emission at room temperature, both in the visible (due to Si NWs) and the IR (due to CNTs) range, thus demonstrating the realization of a low-cost material with promising perspectives for applications in Si-based photonics. - Highlights: • Synthesis of ultrathin Si nanowires (NWs) by metal-assisted chemical etching • Synthesis of NW/carbon nanotube (CNT) hybrid systems • Structural characterization of Si NWs and Si NW/CNT • Room temperature photoluminescence (PL) properties of Si NWs and of Si NW/CNT • Tuning of the PL properties of the Si NW/CNT hybrid system.

  16. Strain- and defect-mediated thermal conductivity in silicon nanowires.

    Science.gov (United States)

    Murphy, Kathryn F; Piccione, Brian; Zanjani, Mehdi B; Lukes, Jennifer R; Gianola, Daniel S

    2014-07-09

    The unique thermal transport of insulating nanostructures is attributed to the convergence of material length scales with the mean free paths of quantized lattice vibrations known as phonons, enabling promising next-generation thermal transistors, thermal barriers, and thermoelectrics. Apart from size, strain and defects are also known to drastically affect heat transport when introduced in an otherwise undisturbed crystalline lattice. Here we report the first experimental measurements of the effect of both spatially uniform strain and point defects on thermal conductivity of an individual suspended nanowire using in situ Raman piezothermography. Our results show that whereas phononic transport in undoped Si nanowires with diameters in the range of 170-180 nm is largely unaffected by uniform elastic tensile strain, another means of disturbing a pristine lattice, namely, point defects introduced via ion bombardment, can reduce the thermal conductivity by over 70%. In addition to discerning surface- and core-governed pathways for controlling thermal transport in phonon-dominated insulators and semiconductors, we expect our novel approach to have broad applicability to a wide class of functional one- and two-dimensional nanomaterials.

  17. Towards bioelectronic logic (Conference Presentation)

    Science.gov (United States)

    Meredith, Paul; Mostert, Bernard; Sheliakina, Margarita; Carrad, Damon J.; Micolich, Adam P.

    2016-09-01

    One of the critical tasks in realising a bioelectronic interface is the transduction of ion and electron signals at high fidelity, and with appropriate speed, bandwidth and signal-to-noise ratio [1]. This is a challenging task considering ions and electrons (or holes) have drastically different physics. For example, even the lightest ions (protons) have mobilities much smaller than electrons in the best semiconductors, effective masses are quite different, and at the most basic level, ions are `classical' entities and electrons `quantum mechanical'. These considerations dictate materials and device strategies for bioelectronic interfaces alongside practical aspects such as integration and biocompatibility [2]. In my talk I will detail these `differences in physics' that are pertinent to the ion-electron transduction challenge. From this analysis, I will summarise the basic categories of device architecture that are possibilities for transducing elements and give recent examples of their realisation. Ultimately, transducing elements need to be combined to create `bioelectronic logic' capable of signal processing at the interface level. In this regard, I will extend the discussion past the single element concept, and discuss our recent progress in delivering all-solids-state logic circuits based upon transducing interfaces. [1] "Ion bipolar junction transistors", K. Tybrandt, K.C. Larsson, A. Richter-Dahlfors and M. Berggren, Proc. Natl Acad. Sci., 107, 9929 (2010). [2] "Electronic and optoelectronic materials and devices inspired by nature", P Meredith, C.J. Bettinger, M. Irimia-Vladu, A.B. Mostert and P.E. Schwenn, Reports on Progress in Physics, 76, 034501 (2013).

  18. Phonon surface scattering controlled length dependence of thermal conductivity of silicon nanowires.

    Science.gov (United States)

    Xie, Guofeng; Guo, Yuan; Li, Baohua; Yang, Liwen; Zhang, Kaiwang; Tang, Minghua; Zhang, Gang

    2013-09-21

    We present a kinetic model to investigate the anomalous thermal conductivity in silicon nanowires (SiNWs) by focusing on the mechanism of phonon-boundary scattering. Our theoretical model takes into account the anharmonic phonon-phonon scattering and the angle-dependent phonon scattering from the SiNWs surface. For SiNWs with diameter of 27.2 nm, it is found that in the case of specular reflection at lateral boundaries, the thermal conductivity increases as the length increases, even when the length is up to 10 μm, which is considerably longer than the phonon mean free path (MFP). Thus the phonon-phonon scattering alone is not sufficient for obtaining a normal diffusion in nanowires. However, in the case of purely diffuse reflection at lateral boundaries, the phonons diffuse normally and the thermal conductivity converges to a constant when the length of the nanowire is greater than 100 nm. Our model demonstrates that for observing the length dependence of thermal conductivity experimentally, nanowires with smooth and non-contaminated surfaces, and measuring at low temperature, are preferred.

  19. Surface Characteristics of Silicon Nanowires/Nanowalls Subjected to Octadecyltrichlorosilane Deposition and n-octadecane Coating.

    Science.gov (United States)

    Yilbas, Bekir Sami; Salhi, Billel; Yousaf, Muhammad Rizwan; Al-Sulaiman, Fahad; Ali, Haider; Al-Aqeeli, Nasser

    2016-12-09

    In this study, nanowires/nanowalls were generated on a silicon wafer through a chemical etching method. Octadecyltrichlorosilane (OTS) was deposited onto the nanowire/nanowall surfaces to alter their hydrophobicity. The hydrophobic characteristics of the surfaces were further modified via a 1.5-μm-thick layer of n-octadecane coating on the OTS-deposited surface. The hydrophobic characteristics of the resulting surfaces were assessed using the sessile water droplet method. Scratch and ultraviolet (UV)-visible reflectivity tests were conducted to measure the friction coefficient and reflectivity of the surfaces. The nanowires formed were normal to the surface and uniformly extended 10.5 μm to the wafer surface. The OTS coating enhanced the hydrophobic state of the surface, and the water contact angle increased from 27° to 165°. The n-octadecane coating formed on the OTS-deposited nanowires/nanowalls altered the hydrophobic state of the surface. This study provides the first demonstration that the surface wetting characteristics change from hydrophobic to hydrophilic after melting of the n-octadecane coating. In addition, this change is reversible; i.e., the hydrophilic surface becomes hydrophobic after the n-octadecane coating solidifies at the surface, and the process again occurs in the opposite direction after the n-octadecane coating melts.

  20. Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

    Science.gov (United States)

    Liu-Hong, Ma; Wei-Hua, Han; Hao, Wang; Qi-feng, Lyu; Wang, Zhang; Xiang, Yang; Fu-Hua, Yang

    2016-06-01

    Silicon junctionless nanowire transistor (JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate. The performances of the transistor, i.e., current drive, threshold voltage, subthreshold swing (SS), and electron mobility are evaluated. The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K. The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to 50 K, which is attributed to the electron transport through one-dimensional (1D) subbands formed in the nanowire. Besides, the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1, implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties. This approach provides a potential application for nanoscale device patterning. Project supported by the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126) and the National Basic Research Program of China (Grant No. 2010CB934104).

  1. Growth and properties of In(Ga)As nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hertenberger, Simon

    2012-10-15

    In this thesis the integration of III-V semiconductor nanowires on silicon (Si) platform by molecular beam epitaxy (MBE) is investigated. All nanowires are grown without the use of foreign catalysts such as Au to achieve high purity material. First, InAs nanowires are grown in a self-assembled manner on SiO{sub x}-masked Si(111) where pinholes in the silicon oxide serve as nucleation spots for the nanowires. This leads to the growth of vertically aligned, (111)-oriented nanowires with hexagonal cross-section. Based on this simple process, the entire growth parameter window is investigated for InAs nanowires, revealing an extremely large growth temperature range from 380 C to 580 C and growth rates as large as 6 μ/h. Complex quantitative in-situ line-of-sight quadrupole mass spectrometry experiments during nanowire growth and post-growth thermal decomposition studies support these findings and indicate a very high thermal stability up to >540 C for InAs nanowires. Furthermore, the influence of the As/In ratio on the nanowire growth is studied revealing two distinct growth regimes, i.e., an In-rich regime for lower As fluxes and an As-rich regime for larger As fluxes, where the latter shows characteristic saturation of the nanowire aspect ratio. For the catalyst-free growth, detailed investigation of the growth mechanism is performed via a combination of in-situ reflection high-energy electron diffraction (RHEED) and ex-situ scanning and transmission electron microscopy (SEM,TEM). An abrupt onset of nanowire growth is observed in RHEED intensity and in-plane lattice parameter evolution. Furthermore, completely droplet-free nanowires, continuous radial growth, constant vertical growth rate and growth interruption experiments suggest a vapor-solid growth mode for all investigated nanowire samples. Moreover, site-selective (positioned) growth of InAs nanowires on pre-patterned SiO{sub 2} masked Si(111) substrates is demonstrated which is needed for ultimate control of

  2. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

    KAUST Repository

    Heo, Junseok

    2013-10-01

    GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.

  3. Balanced ternary addition using a gated silicon nanowire

    NARCIS (Netherlands)

    Mol, J.A.; Van der Heijden, J.; Verduijn, J.; Klein, M.; Remacle, F.; Rogge, S.

    2011-01-01

    Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a

  4. Sensitive and Selective Detection of HIV-1 RRE RNA Using Vertical Silicon Nanowire Electrode Array

    Science.gov (United States)

    Lee, Jaehyung; Hong, Min-Ho; Han, Sanghun; Na, Jukwan; Kim, Ilsoo; Kwon, Yong-Joon; Lim, Yong-beom; Choi, Heon-Jin

    2016-07-01

    In this study, HIV-1 Rev response element (RRE) RNA was detected via an Au-coated vertical silicon nanowire electrode array (VSNEA). The VSNEA was fabricated by combining bottom-up and top-down approaches and then immobilized by artificial peptides for the recognition of HIV-1 RRE. Differential pulse voltammetry (DPV) analysis was used to measure the electrochemical response of the peptide-immobilized VSNEA to the concentration and types of HIV-1 RRE RNA. DPV peaks showed linearity to the concentration of RNA with a detection limit down to 1.513 fM. It also showed the clear different peaks to the mutated HIV-1 RRE RNA. The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes.

  5. Silicon nanowires used as the anode of a lithium-ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Prosini, Pier Paolo [ENEA, Italian National Agency for New Technologies, Energy and Sustainable Economic Development, Casaccia Research Centre, Via Anguillarese 301, 00123 Santa Maria di Galeria, Rome (Italy); DInESto, Drive the Innovation in Energy Storage, Via Provincie, 04012 Cisterna di Latina (Italy); Rufoloni, Alessandro; Rondino, Flaminia; Santoni, Antonino [ENEA, Italian National Agency for New Technologies, Energy and Sustainable Economic Development, Frascati Research Centre, via E. Fermi 45, 00044 Frascati (Italy)

    2015-06-23

    In this paper the synthesis and characterization of silicon nanowires to be used as the anode of a lithium-ion battery cell are reported. The nanowires were synthesized by CVD and characterized by SEM. The nanostructured material was used as an electrode in a lithium cell and its electrochemical properties were investigated by galvanostatic charge/discharge cycles at C/10 rate as a function of the cycle number and at various rates as a function of the charge current. The electrode was then coupled with a LiFePO{sub 4} cathode to fabricate a lithium-ion battery cell and the cell performance evaluated by galvanostatic charge/discharge cycles.

  6. Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

    Science.gov (United States)

    Li, Kai-Li; An, Jun-Ming; Zhang, Jia-Shun; Wang, Yue; Wang, Liang-Liang; Li, Jian-Guang; Wu, Yuan-Da; Yin, Xiao-Jie; Hu, Xiong-Wei

    2016-12-01

    The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016902), the National Natural Science Foundation of China (Grant Nos. 61274047, 61435013, 61307034, and 61405188), and the National Key Research and Development Program of China (Grant No. 2016YFB0402504).

  7. Atomistic simulations of the tensile and melting behavior of silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    Jing Yuhang; Meng Qingyuan; Zhao Wei

    2009-01-01

    Molecular dynamics simulations with Stillinger-Weber potential are used to study the tensile and melting behavior of single-crystalline silicon nanowires (SiNWs). The tensile tests show that the tensile behavior of the SiNWs is strongly dependent on the simulation temperature, the strain rate, and the diameter of the nanowires.For a given diameter, the critical load significantly decreases as the temperature increases and also as the strain rate decreases. Additionally, the critical load increases as the diameter increases. Moreover, the melting tests demonstrate that both melting temperature and melting heat of the SiNWs decrease with decreasing diameter and length, due to the increase in surface energy. The melting process of SiNWs with increasing temperature is also investigated.

  8. Enhanced light-harvesting capability for silicon single-nanowire solar cells coupled with metallic cavity.

    Science.gov (United States)

    Gai, Feng; Zhang, Cheng; Zhan, Yaohui; Li, Xiaofeng

    2016-12-26

    Single-nanowire solar cells (SNSCs) are attracting increasing interest due to their unique optical antenna effect beneficial for achieving higher light-trapping capability. However, for conventional circular-cross-sectional SNSCs, the light-trapping performance is still far from the expectation. Here we demonstrate that integrating a silicon single nanowire into a metallic slit can dramatically enhance the absorption efficiency over almost the whole spectral band due to strengthened optical antenna effect. Especially, it is found that by using finite-size metallic blocks to form a nanoscale metallic cavity, the light-trapping performance of the SNSCs can be further improved. Through examining the detailed optical spectral response, electric field distribution, and cavity dispersion characteristics, the metallic-coupled SNSC system is optimized and the underlying physics are provided. Simulation results indicate that the photocurrent density of the SNSCs coupled with the designed metallic cavity can be enhanced by 44.4% than that of the conventional bare SNSCs.

  9. Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Anufriev, Roman; Chauvin, Nicolas; Bru-Chevallier, Catherine [Universite de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, Villeurbanne (France); Khmissi, Hammadi [Universite de Monastir, Laboratoire de Micro-Optoelectronique et Nanostructures (LMON), Faculte des Sciences, Monastir (Tunisia); Naji, Khalid; Gendry, Michel [Universite de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Ecole Centrale de Lyon, Ecully (France); Patriarche, Gilles [Laboratoire de Photonique et de Nanostructures (LPN), UPR20-CNRS, Marcoussis (France)

    2013-10-15

    Photoluminescence (PL) quantum efficiency (QE) is experimentally investigated, using an integrating sphere, as a function of excitation power on both InAs/InP quantum rod nanowires (QRod-NWs) and radial quantum well nanowires (QWell-NWs) grown on silicon substrates. The measured values of the QE are compared with those of the planar analogues such as quantum dash and quantum well samples, and found to be comparable for the quantum well structures at relatively low power density. Further studies reveal that the values of QE of the QRod-NWs and QWell-NWs are limited by the low quality of the InP NW structure and the quality of radial quantum well, respectively. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Organic Bioelectronic Tools for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    Susanne Löffler

    2015-11-01

    Full Text Available Organic bioelectronics forms the basis of conductive polymer tools with great potential for application in biomedical science and medicine. It is a rapidly growing field of both academic and industrial interest since conductive polymers bridge the gap between electronics and biology by being electronically and ionically conductive. This feature can be employed in numerous ways by choosing the right polyelectrolyte system and tuning its properties towards the intended application. This review highlights how active organic bioelectronic surfaces can be used to control cell attachment and release as well as to trigger cell signaling by means of electrical, chemical or mechanical actuation. Furthermore, we report on the unique properties of conductive polymers that make them outstanding materials for labeled or label-free biosensors. Techniques for electronically controlled ion transport in organic bioelectronic devices are introduced, and examples are provided to illustrate their use in self-regulated medical devices. Organic bioelectronics have great potential to become a primary platform in future bioelectronics. We therefore introduce current applications that will aid in the development of advanced in vitro systems for biomedical science and of automated systems for applications in neuroscience, cell biology and infection biology. Considering this broad spectrum of applications, organic bioelectronics could lead to timely detection of disease, and facilitate the use of remote and personalized medicine. As such, organic bioelectronics might contribute to efficient healthcare and reduced hospitalization times for patients.

  11. Metal-catalyzed electroless etching and nanoimprinting silicon nanowire-based solar cells: Silicon nanowire defect reduction and efficiency enhancement by two-step H2 annealing

    Science.gov (United States)

    Jevasuwan, Wipakorn; Nakajima, Kiyomi; Sugimoto, Yoshimasa; Fukata, Naoki

    2016-06-01

    The effects of H2 annealing on material properties including defects of silicon nanowire (SiNW) surface and Si film layer for solar cell application were investigated. Single-junction solar cells consisting of n-SiNWs and chemical vapor deposition grown p-Si matrix were demonstrated using two-step H2 annealing. n-SiNWs formed by two different methods of metal-catalyzed electroless etching and nanoimprinting followed by the Bosch process were compared. Two-step H2 annealing at 900 °C for 10 min after both n-SiNW formations and subsequent p-Si matrix deposition effectively improved SiNW surface and p-Si crystallinity, resulting in higher solar cell efficiency.

  12. Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications

    Science.gov (United States)

    Ben Rabha, Mohamed; Khezami, Lotfi; Jemai, Abdelbasset Bessadok; Alhathlool, Raed; Ajbar, Abdelhamid

    2017-03-01

    Metal Nano-particle Assisted Chemical Etching (MNpACE) is an extraordinary developed wet etching method for producing uniform semiconductor nanostructure (silicon nanowires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs).The creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. The combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties especially a PL response at 640 nm are presented. As a results, the effective lifetime (τeff) and surface recombination velocity (Seff) evolution of SiNWs after stain etching treatment showed significant improvements and less than 1% reflectance was achieved over the wavelength range of 400-800 nm and more than 36% reduction was observed compared to untreated surface. It has, thus, been demonstrated that all these factors may lead to improved energy efficiency from 8% to nearly 14.2% for a cell with SiNWs treated in acid (HF/HNO3/H2O) solution.

  13. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

    Science.gov (United States)

    Zhuang, Q. D.; Alradhi, H.; Jin, Z. M.; Chen, X. R.; Shao, J.; Chen, X.; Sanchez, Ana M.; Cao, Y. C.; Liu, J. Y.; Yates, P.; Durose, K.; Jin, C. J.

    2017-03-01

    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  14. Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

    Science.gov (United States)

    Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

    2016-12-01

    Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

  15. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  16. All-Optical 40 Gbit/s Regenerative Wavelength Conversion Based on Cross-Phase Modulation in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Hu, Hao; Ji, Hua

    2013-01-01

    We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration.......We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration....

  17. Wavelength conversion of 80 Gb/s RZ-DPSK Pol-MUX signals in a silicon nanowire

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Peucheret, Christophe; Oxenløwe, Leif Katsuo

    2014-01-01

    All-optical wavelength conversion of 80 Gb/s RZ-DPSK polarization multiplexed signals is demonstrated in a silicon nanowire using an angled-pump scheme. The quality of the converted signal is characterized through BER measurements for the first time.......All-optical wavelength conversion of 80 Gb/s RZ-DPSK polarization multiplexed signals is demonstrated in a silicon nanowire using an angled-pump scheme. The quality of the converted signal is characterized through BER measurements for the first time....

  18. All-Optical Wavelength Conversion of a High-Speed RZ-OOK Signal in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits.......All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits....

  19. Silicon nanowires-based fluorescence sensor for Cu(II).

    Science.gov (United States)

    Mu, Lixuan; Shi, Wensheng; Chang, Jack C; Lee, Shuit-Tong

    2008-01-01

    Si nanowires (SiNWs) were covalently modified by fluorescence ligand, N-(quinoline-8-yl)-2-(3-triethoxysilyl-propylamino)-acetamide (QlOEt) and finally formed an optical sensor to realize a highly sensitive and selective detection for Cu(II). The QlOEt-modified SiNWs sensor has sensitivity for Cu(II) down to 10(-8) M, which is more sensitive than QlOEt alone. Metal ions interferences have no observable effect on the sensitivity and selectivity of QlOEt-modified SiNWs sensor. The SiNWs-based fluorescence sensor is reversible by addition of acid to replace Cu(II). The sensing mechanisms of QlOEt-modified SiNWs to Cu(II) and the rationale for the increase in sensitivity and selectivity of QlOEt-modified SiNWs over QlOEt on Cu(II) are discussed. The current sensor structure may be extendable to other chemo- and biosensors, and even to nanosensors for direct detection of specific materials in intracellular environment.

  20. Improving the cycling stability of silicon nanowire anodes with conducting polymer coatings

    KAUST Repository

    Yao, Yan

    2012-01-01

    For silicon nanowires (Si NWs) to be used as a successful high capacity lithium-ion battery anode material, improvements in cycling stability are required. Here we show that a conductive polymer surface coating on the Si NWs improves cycling stability; coating with PEDOT causes the capacity retention after 100 charge-discharge cycles to increase from 30% to 80% over bare NWs. The improvement in cycling stability is attributed to the conductive coating maintaining the mechanical integrity of the cycled Si material, along with preserving electrical connections between NWs that would otherwise have become electrically isolated during volume changes. © 2012 The Royal Society of Chemistry.

  1. Silicon nanowire charge-trap memory incorporating self-assembled iron oxide quantum dots.

    Science.gov (United States)

    Huang, Ruo-Gu; Heath, James R

    2012-11-19

    Charge-trap non-volatile memory devices based upon the precise integration of quantum dot storage elements with silicon nanowire field-effect transistors are described. Template-assisted assembly yields an ordered array of FeO QDs within the trenches that separate highly aligned SiNWs, and injected charges are reversibly stored via Fowler-Nordheim tunneling into the QDs. Stored charges shift the transistor threshold voltages, providing the basis for a memory device. Quantum dot size is found to strongly influence memory performance metrics.

  2. Hyperbolic and Plasmonic Properties of Silicon/Ag Aligned Nanowire Arrays

    Science.gov (United States)

    2013-06-17

    silicon nanowires via gold/ silane vapor-liquid- solid reaction,” J. Vac. Sci. Technol. B 15(3), 554 (1997). 49. K. Peng, Y. J. Yan, S. P. Gao, and J...chambers which are expensive and which can require rather dangerous gases, such as silane . Furthermore, most of these systems produce randomly grown Si...17 Jun 2013 (C) 2013 OSA 17 June 2013 | Vol. 21, No. 12 | DOI:10.1364/OE.21.014962 | OPTICS EXPRESS 14965 ethanol, and DI water , followed by a

  3. Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires.

    Science.gov (United States)

    Fukata, Naoki; Takiguchi, Ryo; Ishida, Shinya; Yokono, Shigeki; Hishita, Shunichi; Murakami, Kouichi

    2012-04-24

    Recrystallization of silicon nanowires (SiNWs) after ion implantation strongly depends on the ion doses and species. Full amorphization by high-dose implantation induces polycrystal structures in SiNWs even after high-temperature annealing, with this tendency more pronounced for heavy ions. Hot-implantation techniques dramatically suppress polycrystallization in SiNWs, resulting in reversion to the original single-crystal structures and consequently high reactivation rate of dopant atoms. In this study, the chemical bonding states and electrical activities of implanted boron and phosphorus atoms were evaluated by Raman scattering and electron spin resonance, demonstrating the formation of p- and n-type SiNWs.

  4. Interfering Heralded Single Photons from Two Separate Silicon Nanowires Pumped at Different Wavelengths

    Directory of Open Access Journals (Sweden)

    Xiang Zhang

    2016-08-01

    Full Text Available Practical quantum photonic applications require on-demand single photon sources. As one possible solution, active temporal and wavelength multiplexing has been proposed to build an on-demand single photon source. In this scheme, heralded single photons are generated from different pump wavelengths in many temporal modes. However, the indistinguishability of these heralded single photons has not yet been experimentally confirmed. In this work, we achieve 88% ± 8% Hong–Ou–Mandel quantum interference visibility from heralded single photons generated from two separate silicon nanowires pumped at different wavelengths. This demonstrates that active temporal and wavelength multiplexing could generate indistinguishable heralded single photons.

  5. Field-effect modulation of the thermoelectric characteristics of silicon nanowires on plastic substrates

    Science.gov (United States)

    Choi, Jinyong; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig

    2016-12-01

    In this study, we demonstrate the substantial enhancement of the thermoelectric power factors of silicon nanowires (SiNWs) on plastic substrates achievable by field-effect modulation. The Seebeck coefficient and electrical conductivity are adjusted by varying the charge carrier concentration via electrical modulation with a gate voltage in the 0 to ±5 range, thus enhancing the power factors from 2.08 to 935 μW K-2 m-1) for n-type SiNWs, and from 453 to 944 μW K-2 m-1) for p-type SiNWs. The electrically modulated thermoelectric characteristics of SiNWs are analyzed and discussed.

  6. Realization of effective light trapping and omnidirectional antireflection in smooth surface silicon nanowire arrays.

    Science.gov (United States)

    Xie, W Q; Oh, J I; Shen, W Z

    2011-02-11

    We have successfully fabricated well-ordered silicon nanowire (SiNW) arrays of smooth surface by using a low-cost and facile Ag-assisted chemical etching technique. We have experimentally found that the reflectance can be significantly suppressed (absorption in SiNW arrays, we have obtained a photocurrent enhancement of up to 425% per unit volume of material as compared to crystalline Si, implying that effective light trapping can be realized in the as-grown samples. In addition, we have demonstrated experimentally and theoretically that the as-grown samples have an omnidirectional high-efficiency antireflection property.

  7. Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles.

    Science.gov (United States)

    Liu, Kong; Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Wang, Zhanguo

    2013-02-18

    Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture our hybrid cells. Both short-circuit current and external quantum efficiency measurements show an enhancement in optical absorption of organic layer, especially at lower wavelengths.

  8. Lithium Insertion In Silicon Nanowires: An ab Initio Study

    KAUST Repository

    Zhang, Qianfan

    2010-09-08

    The ultrahigh specific lithium ion storage capacity of Si nanowires (SiNWs) has been demonstrated recently and has opened up exciting opportunities for energy storage. However, a systematic theoretical study on lithium insertion in SiNWs remains a challenge, and as a result, understanding of the fundamental interaction and microscopic dynamics during lithium insertion is still lacking. This paper focuses on the study of single Li atom insertion into SiNWs with different sizes and axis orientations by using full ab initio calculations. We show that the binding energy of interstitial Li increases as the SiNW diameter grows. The binding energies at different insertion sites, which can be classified as surface, intermediate, and core sites, are quite different. We find that surface sites are energetically the most favorable insertion positions and that intermediate sites are the most unfavorable insertion positions. Compared with the other growth directions, the [110] SiNWs with different diameters always present the highest binding energies on various insertion locations, which indicates that [110] SiNWs are more favorable by Li doping. Furthermore, we study Li diffusion inside SiNWs. The results show that the Li surface diffusion has a much higher chance to occur than the surface to core diffusion, which is consistent with the experimental observation that the Li insertion in SiNWs is layer by layer from surface to inner region. After overcoming a large barrier crossing surface-to-intermediate region, the diffusion toward center has a higher possibility to occur than the inverse process. © 2010 American Chemical Society.

  9. Nano-Electronics and Bio-Electronics

    Science.gov (United States)

    Srivastava, Deepak; Kwak, Dochan (Technical Monitor)

    2001-01-01

    Viewgraph presentation on Nano-Electronics and Bio-Electronics is discussed. Topics discussed include: NASA Ames nanotechnology program, Potential Carbon Nanotube (CNT) application, CNT synthesis,Computational Nanotechnology, and protein nanotubes.

  10. Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

    Science.gov (United States)

    Keleş, Ümit; ćakan, Aslı; Bulutay, Ceyhun

    2015-02-01

    We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.

  11. In Situ X-ray Diffraction Studies of (De)lithiation Mechanism in Silicon Nanowire Anodes

    KAUST Repository

    Misra, Sumohan

    2012-06-26

    Figure Persented: Silicon is a promising anode material for Li-ion batteries due to its high theoretical specific capacity. From previous work, silicon nanowires (SiNWs) are known to undergo amorphorization during lithiation, and no crystalline Li-Si product has been observed. In this work, we use an X-ray transparent battery cell to perform in situ synchrotron X-ray diffraction on SiNWs in real time during electrochemical cycling. At deep lithiation voltages the known metastable Li 15Si 4 phase forms, and we show that avoiding the formation of this phase, by modifying the SiNW growth temperature, improves the cycling performance of SiNW anodes. Our results provide insight on the (de)lithiation mechanism and a correlation between phase evolution and electrochemical performance for SiNW anodes. © 2012 American Chemical Society.

  12. Optimal design of laterally assembled hexagonal silicon nanowires for broadband absorption enhancement in ultrathin solar cells

    Science.gov (United States)

    Shahraki, Mojtaba; Salehi, Mohammad Reza; Abiri, Ebrahim

    2015-11-01

    Design approaches to carry out broadband absorption in laterally assembled hexagonal silicon nanowire (NW) solar cells are investigated. Two different methods are proposed to improve the current density of silicon NW solar cells. It is observed that the key to the broadband absorption is disorder and irregularity. The first approach to reach the broadband absorption is using multiple NWs with different geometries. Nevertheless, the maximum enhancement is obtained by introducing irregular NWs. They can support more cavity modes, while scattering by NWs leads to broadening of the absorption spectra. An array of optimized irregular NWs also has preferable features compared to other broadband structures. Using irregular NW arrays, it is possible to improve the absorption enhancement of solar cells without introducing more absorbing material.

  13. Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Keleş, Ümit; Çakan, Aslı; Bulutay, Ceyhun, E-mail: bulutay@fen.bilkent.edu.tr [Department of Physics, Bilkent University, Bilkent, Ankara 06800 (Turkey)

    2015-02-14

    We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.

  14. High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

    Science.gov (United States)

    Lu, Hai-bo; Chan, Benjamin C. Y.; Wang, Xiaolin; Tong Chua, Hui; Raston, Colin L.; Albu-Yaron, Ana; Levy, Moshe; Popowitz-Biro, Ronit; Tenne, Reshef; Feuermann, Daniel; Gordon, Jeffrey M.

    2013-08-01

    We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures—characterized by SEM, TEM, HRTEM, SAED, XRD and EDS—are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

  15. A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

    Directory of Open Access Journals (Sweden)

    Denis E. Presnov

    2013-05-01

    Full Text Available Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode.Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.

  16. Novel Size and Surface Oxide Effects in Silicon Nanowires as Lithium Battery Anodes

    KAUST Repository

    McDowell, Matthew T.

    2011-09-14

    With its high specific capacity, silicon is a promising anode material for high-energy lithium-ion batteries, but volume expansion and fracture during lithium reaction have prevented implementation. Si nanostructures have shown resistance to fracture during cycling, but the critical effects of nanostructure size and native surface oxide on volume expansion and cycling performance are not understood. Here, we use an ex situ transmission electron microscopy technique to observe the same Si nanowires before and after lithiation and have discovered the impacts of size and surface oxide on volume expansion. For nanowires with native SiO2, the surface oxide can suppress the volume expansion during lithiation for nanowires with diameters <∼50 nm. Finite element modeling shows that the oxide layer can induce compressive hydrostatic stress that could act to limit the extent of lithiation. The understanding developed herein of how volume expansion and extent of lithiation can depend on nanomaterial structure is important for the improvement of Si-based anodes. © 2011 American Chemical Society.

  17. Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs

    Science.gov (United States)

    Marchi, A.; Gnani, E.; Reggiani, S.; Rudan, M.; Baccarani, G.

    2006-01-01

    In this work we investigate and compare the electrostatics of fully depleted cylindrical silicon-nanowire (SiCNW) FETs, four-gate rectangular nanowire (4G RNW) FETs, tri-gate rectangular nanowire (3G RNW) FETs and gate-all-around carbon-nanotube (GAA-CNT) FETs at advanced miniaturization limits. In doing so, we rigorously solve the coupled Schrödinger-Poisson equations within the device cross-sections and fully account for quantum-mechanical effects. The investigation, carried out for the 65 and 45 nm technology nodes, leads to the unexpected conclusion that, for an assigned threshold voltage, the gate-all-around CNT-FET offers only a slightly better performance with respect to the SiCNW and the 4G RNW-FETs. This is due to the compensation of two different mechanisms, namely a higher gate effectiveness and a lower density of states. The 3G RNW yields instead an electron density within the channel which is about 25% lower than the SiCNW and 4G RNW-FETs at a given gate voltage. Such a reduced performance is due to its inherent asymmetry, which negatively affects the gate control on the channel charge.

  18. A vertical tip-tip contact silicon nanowire array for gas sensing.

    Science.gov (United States)

    Lin, Leimiao; Liu, Dong; Chen, Qiaofen; Zhou, Hongzhi; Wu, Jianmin

    2016-10-20

    Novel chemiresistive gas sensors based on a vertical tip-tip contact silicon nanowire (TTC-SiNW) array were constructed. The welding of TTC-SiNWs after joule heating treatment was confirmed by a current-voltage curve (I-V curve). The TTC-SiNW structure not only resolved the problem of electrode contact encountered in conventional nanowire sensors, but also elongated the nanowire length to increase the void space for fast gas diffusion. The TTC-SiNW sensor comprising the same two types of SiNW arrays responded to NO2 very sensitively. The LOD for the p-p and n-n contact SiNW arrays is around 150 ppb and 3 ppb (S/N = 3), respectively. Furthermore, the highly oriented nano-junction formed on the TTC structure provided solid evidence to clarify the contribution of the nanojunction to gas sensing behavior. The TTC-SiNW sensor with a p-n junction displays a significant rectification effect. The sensitive response towards NO2 (LOD is about 18 ppb) was observed at a reverse bias voltage, whereas the response at a forward bias voltage was insignificant. Finally, the mechanism of gas sensing behavior on different types of TTC structures was proposed.

  19. Young's Modulus, Residual Stress, and Crystal Orientation of Doubly Clamped Silicon Nanowire Beams.

    Science.gov (United States)

    Calahorra, Y; Shtempluck, O; Kotchetkov, V; Yaish, Y E

    2015-05-13

    Initial or residual stress plays an important role in nanoelectronics. Valley degeneracy in silicon nanowires (SiNWs) is partially lifted due to built-in stresses, and consequently, electron-phonon scattering rate is reduced and device mobility and performance are improved. In this study we use a nonlinear model describing the force-deflection relationship to extract the Young's modulus, the residual stress, and the crystallographic growth orientation of SiNW beams. Measurements were performed on suspended doubly clamped SiNWs subjected to atomic force microscopy (AFM) three-point bending constraints. The nanowires comprised different growth directions and two SiO2 sheath thicknesses, and underwent different rapid thermal annealing processes. Analysis showed that rapid thermal annealing introduces compressive strains into the SiNWs and may result in buckling of the SiNWs. Furthermore, the core-shell model together with the residual stress analysis accurately describe the Young's modulus of oxide covered SiNWs and the crystal orientation of the measured nanowires.

  20. Tuning the electronic band-gap of fluorinated 3C-silicon carbide nanowires

    Science.gov (United States)

    Miranda Durán, Álvaro; Trejo Baños, Alejandro; Pérez, Luis Antonio; Cruz Irisson, Miguel

    The possibility of control and modulation of the electronic properties of silicon carbide nanowires (SiCNWs) by varying the wire diameter is well known. SiCNWs are particularly interesting and technologically important, due to its electrical and mechanical properties, allowing the development of materials with specific electronic features for the design of stable and robust electronic devices. Tuning the band gap by chemical surface passivation constitutes a way for the modification of the electronic band gap of these nanowires. We present, the structural and electronic properties of fluorinated SiCNWs, grown along the [111] crystallographic direction, which are investigated by first principles. We consider nanowires with six diameters, varying from 0.35 nm to 2.13 nm, and eight random covering schemes including fully hydrogen- and fluorine terminated ones. Gibbs free energy of formation and electronic properties were calculated for the different surface functionalization schemes and diameters considered. The results indicate that the stability and band gap of SiCNWs can be tuned by surface passivation with fluorine atoms This work was supported by CONACYT infrastructure project 252749 and UNAM-DGAPA-PAPIIT IN106714. A.M. would like to thank for financial support from CONACyT-Retención. Computing resources from proyect SC15-1-IR-27 of DGTIC-UNAM are acknowledged.

  1. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

    Science.gov (United States)

    Guerfi, Youssouf; Larrieu, Guilhem

    2016-04-01

    Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed.

  2. Self-bridging of vertical silicon nanowires and a universal capacitive force model for spontaneous attraction in nanostructures.

    Science.gov (United States)

    Sun, Zhelin; Wang, Deli; Xiang, Jie

    2014-11-25

    Spontaneous attractions between free-standing nanostructures have often caused adhesion or stiction that affects a wide range of nanoscale devices, particularly nano/microelectromechanical systems. Previous understandings of the attraction mechanisms have included capillary force, van der Waals/Casimir forces, and surface polar charges. However, none of these mechanisms universally applies to simple semiconductor structures such as silicon nanowire arrays that often exhibit bunching or adhesions. Here we propose a simple capacitive force model to quantitatively study the universal spontaneous attraction that often causes stiction among semiconductor or metallic nanostructures such as vertical nanowire arrays with inevitably nonuniform size variations due to fabrication. When nanostructures are uniform in size, they share the same substrate potential. The presence of slight size differences will break the symmetry in the capacitive network formed between the nanowires, substrate, and their environment, giving rise to electrostatic attraction forces due to the relative potential difference between neighboring wires. Our model is experimentally verified using arrays of vertical silicon nanowire pairs with varied spacing, diameter, and size differences. Threshold nanowire spacing, diameter, or size difference between the nearest neighbors has been identified beyond which the nanowires start to exhibit spontaneous attraction that leads to bridging when electrostatic forces overcome elastic restoration forces. This work illustrates a universal understanding of spontaneous attraction that will impact the design, fabrication, and reliable operation of nanoscale devices and systems.

  3. Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology

    Science.gov (United States)

    Kohen, David; Cayron, Cyril; De Vito, Eric; Tileli, Vasiliki; Faucherand, Pascal; Morin, Christine; Brioude, Arnaud; Perraud, Simon

    2012-02-01

    We study the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with aluminum as catalyst. We show that for a growth temperature of 600 °C, the silicon precursor partial pressure (SiH4 in this study) is a key parameter for controlling the structural quality of the resulting SiNWs. We find by transmission electron microscopy that at high SiH4 partial pressure, the SiNWs are composed of a monocrystalline core with a high density of surface defects, mainly twins, sheathed by a rough amorphous silicon layer. By contrast, at low SiH4 partial pressure, the SiNWs are monocrystalline with a lower density of surface crystalline defects and a smooth surface. For the low SiH4 partial pressure SiNWs, Al atoms have been detected at the SiNW surface by Auger spectroscopy at level around 3 at% and in the SiNW core by energy dispersive X-ray spectroscopy (EDS) at levels around 1 at%. Interestingly, higher Al concentrations are measured inside the nano-twin domains by EDS (around ten times increase). Two possible explanations are proposed; stacking faults are induced by Al atoms that lower their energy formation, or Al atoms can be trapped inside these stacking faults due to segregation effect during growth. These findings will be important for growing high quality SiNWs using Al as metal catalyst in reduced-pressure CVD tool.

  4. High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer

    Science.gov (United States)

    Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

    2015-11-01

    Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/PEDOT:PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/PEDOT:PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/PEDOT:PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells.

  5. Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Si [The Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Chen, Jiangtao [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Mid. Road, Lanzhou 730000 (China); Liu, Jianlin [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521 (United States); Qi, Jing, E-mail: qijing@lzu.edu.cn [The Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wang, Yuhua, E-mail: wyh@lzu.edu.cn [Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)

    2016-11-30

    Highlights: • We obtained ZnO nanowire arrays grown on ZnO seed layer on Si with MgO buffer. • FE properties of ZnO nanowire arrays grown on ZnO seed layer on Si with MgO buffer is better than that without MgO buffer. • With MgO buffer, the ZnO seed layer shows lower top-bottom resistance and better electron transport. • The enhanced field emission properties can be attributed to good electron transport in seed layer, good nanowire alignment because of MgO buffer. - Abstract: Field emitters based on ZnO nanowires and other nanomaterials are promising high-brightness electron sources for field emission display, microscopy and other applications. The performance of a ZnO nanowire field emitter is linked to the quality, conductivity and alignment of the nanowires on a substrate, therefore requiring ways to improve these parameters. Here, ZnO nanowire arrays were grown on ZnO seed layer on silicon substrate with MgO buffer between the seed layer and Si. The turn-on field and enhancement factor of these nanowire arrays are 3.79 V/μm and 3754, respectively. These properties are improved greatly compared to those of ZnO nanowire arrays grown on ZnO seed layer without MgO buffer, which are 5.06 V/μm and 1697, respectively. The enhanced field emission properties can be attributed to better electron transport in seed layer, and better nanowire alignment because of MgO buffer.

  6. Temperature dependence of first- and second-order Raman scattering in silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Khachadorian, S.; Scheel, H.; Vierck, A.; Thomsen, C. [Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Berlin (Germany); Colli, A. [Nokia Research Centre, Broers Building, 21 J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom)

    2010-12-15

    The first- and second-order Raman scattering of the silicon nanowires grown without any metal catalyst is studied in the temperature range from 77 to 873 K. The first- and second-order Raman peaks were found to shift and broaden differently with increasing temperature. We show that this is due to the confinement related enhanced anharmonic effects in silicon nanowires. Our measurements also show that both the second- to first-order Raman peak intensity ratio [I(2TA){sub int.}/I(1TO){sub int.} and I(2TO){sub int.}/I(1TO){sub int.}] and the Raman relative intensities [I(2TA){sub int.}/I(2TO){sub int.}] increase with increasing temperature. TEM image of SiNWs. The SiNW are 15 nm in diameter and up to a few microns long. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Morphology, structure and magnetic study of permalloy films electroplated on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Lamrani, S. [Centre de Recherche en Technologie des Semi-Conducteurs pour l’énergétique, 2 Bd Frantz Fanon, BP 140 les 7 merveilles, Algiers (Algeria); Université Mouloud Mammeri, TiziOuzou 15000 (Algeria); Guittoum, A., E-mail: aguittoum@gmail.com [Nuclear Research Centre of Algiers, 2 Bd Frantz Fanon, BP399 Alger-Gare, Algiers (Algeria); Schäfer, R. [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Inst. f. Metallic Materials, Helmholtz str. 20, D-01069 Dresden (Germany); Hemmous, M. [Nuclear Research Centre of Algiers, 2 Bd Frantz Fanon, BP399 Alger-Gare, Algiers (Algeria); Neu, V.; Pofahl, S. [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Inst. f. Metallic Materials, Helmholtz str. 20, D-01069 Dresden (Germany); Hadjersi, T. [Centre de Recherche en Technologie des Semi-Conducteurs pour l’énergétique, 2 Bd Frantz Fanon, BP 140 les 7 merveilles, Algiers (Algeria); Benbrahim, N. [Université Mouloud Mammeri, TiziOuzou 15000 (Algeria)

    2015-12-15

    We report the effect of deposition potential on the morphology, structure and magnetic properties of Ni{sub 80}Fe{sub 20} (Permalloy: Py) deposits, elaborated by electrochemical process onto silicon nanowires (SiNWs). The morphology of SiNWs and Py/SiNWs were performed with scanning electron microscopy (SEM). The SEM micrographs reveal the formation of SiNWs and clearly show a change in the morphology with the deposition potential. The analysis of X-ray diffraction spectra shows a change in the texture with the deposition potential. The grain size, the lattice parameter and the strain were studied as a function of the deposition potentials. From hysteresis loops, we have shown that the magnetization easy axis is the plane of the samples. - Highlights: • Permalloy deposits were elaborated by electrochemical process onto silicon nanowires (SiNWs). • SEM micrographs reveal the formation of SiNWs and clearly show a change in the morphology with the deposition potential. • The magnetization easy axis was found to be in the plane of samples.

  8. Nano-cross-junction effect on phonon transport in silicon nanowire cages

    Science.gov (United States)

    Ma, Dengke; Ding, Hongru; Meng, Han; Feng, Lei; Wu, Yue; Shiomi, Junichiro; Yang, Nuo

    2016-10-01

    Wave effects of phonons can give rise to controllability of heat conduction in nanostructures beyond that by particle scattering at surfaces and interfaces. In this paper, we propose a new class of three-dimensional nanostructures: a silicon-nanowire-cage (SiNWC) structure consisting of silicon nanowires (SiNWs) connected by nano-cross-junctions. We perform equilibrium molecular dynamics simulations and find an ultralow value of thermal conductivity of SiNWC, 0.173 W m-1K-1 , which is one order lower than that of SiNWs. By further modal analysis and atomistic Green's function calculations, we identify that the large reduction is due to significant phonon localization induced by the phonon local resonance and hybridization at the junction part in a wide range of phonon modes. This localization effect does not require the cage to be periodic, unlike the phononic crystals, and can be realized in structures that are easier to synthesize, for instance in a form of randomly oriented SiNW network.

  9. Characterization of peptide attachment on silicon nanowires by X-ray photoelectron spectroscopy and mass spectrometry.

    Science.gov (United States)

    Kurylo, Ievgen; Dupré, Mathieu; Cantel, Sonia; Enjalbal, Christine; Drobecq, Hervé; Szunerits, Sabine; Melnyk, Oleg; Boukherroub, Rabah; Coffinier, Yannick

    2017-02-27

    In this paper, we report an original method to immobilize a model peptide on silicon nanowires (SiNWs) via a photolinker attached to the SiNWs' surface. The silicon nanowires were fabricated by a metal assisted chemical etching (MACE) method. Then, direct characterization of the peptide immobilization on SiNWs was performed either by X-ray photoelectron spectroscopy (XPS) or by laser-desorption/ionization mass spectrometry (LDI-MS). XPS allowed us to follow the peptide immobilization and its photorelease by recording the variation of the signal intensities of the different elements present on the SiNW surface. Mass spectrometry was performed without the use of an organic matrix and peptide ions were produced via a photocleavage mechanism. Indeed, thanks to direct photorelease achieved upon laser irradiation, a recorded predictable peak related to the molecular peptide ion has been detected, allowing the identification of the model peptide. Additional MS/MS experiments confirmed the photodissociation site and confirmed the N-terminal immobilization of the peptide on SiNWs.

  10. High frequency top-down junction-less silicon nanowire resonators

    Science.gov (United States)

    Koumela, Alexandra; Hentz, Sébastien; Mercier, Denis; Dupré, Cécilia; Ollier, Eric; X-L Feng, Philip; Purcell, Stephen T.; Duraffourg, Laurent

    2013-11-01

    We report here the first realization of top-down silicon nanowires (SiNW) transduced by both junction-less field-effect transistor (FET) and the piezoresistive (PZR) effect. The suspended SiNWs are among the smallest top-down SiNWs reported to date, featuring widths down to ˜20 nm. This has been achieved thanks to a 200 mm-wafer-scale, VLSI process fully amenable to monolithic CMOS co-integration. Thanks to the very small dimensions, the conductance of the silicon nanowire can be controlled by a nearby electrostatic gate. Both the junction-less FET and the previously demonstrated PZR transduction have been performed with the same SiNW. These self-transducing schemes have shown similar signal-to-background ratios, and the PZR transduction has exhibited a relatively higher output signal. Allan deviation (σA) of the same SiNW has been measured with both schemes, and we obtain σA ˜ 20 ppm for the FET detection and σA ˜ 3 ppm for the PZR detection at room temperature and low pressure. Orders of magnitude improvements are expected from tighter electrostatic control via changes in geometry and doping level, as well as from CMOS integration. The compact, simple topology of these elementary SiNW resonators opens up new paths towards ultra-dense arrays for gas and mass sensing, time keeping or logic switching systems on the SiNW-CMOS platform.

  11. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

    KAUST Repository

    Guo, Wei

    2011-01-01

    High density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.

  12. Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Chehata, Nadia, E-mail: nadiachehata2@gmail.com [Equipe Dispositifs Electroniques Organiques et Photovoltaïque Moléculaire, Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Ltaief, Adnen [Equipe Dispositifs Electroniques Organiques et Photovoltaïque Moléculaire, Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Ilahi, Bouraoui [Laboratoire de Micro-optoélectronique et Nanostructures, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Salem, Bassem [Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS - UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Bouazizi, Abdelaziz [Equipe Dispositifs Electroniques Organiques et Photovoltaïque Moléculaire, Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Maaref, Hassen [Laboratoire de Micro-optoélectronique et Nanostructures, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Baron, Thierry [Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS - UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); and others

    2014-12-15

    Hybrid nanocomposites based on a nanoscale combination of organic and inorganic semiconductors are a promising way to enhance the performance of solar cells through a higher aspect ratio of the interface and the good processability of polymers. Nanocomposites are based on a heterojunction network between poly (2-methoxy-5-(2-ethyhexyl-oxy)-p-phenylenevinylene) (MEH-PPV) as an organic electron donor and silicon nanowires (SiNWs) as an inorganic electron acceptor. Nanowires (NWs) seem to be a promising material for this purpose, as they provide a large surface area for contact with the polymer and a designated conducting pathway whilst their volume is low. In this paper, silicon nanowires are introduced by mixing them into the polymer matrix. Hybrid nanocomposites films were deposited onto ITO substrate by spin coating method. Optical properties and photocurrent response were investigated. Charge transfer between the polymer and SiNWs has been demonstrated through photoluminescence measurements. The photocurrent density of ITO/MEH-PPV:SiNWs/Al structures have been obtained by J–V characteristics. The J{sub sc} value is about 0.39 µA/cm{sup 2}. - Highlights: • SiNWs synthesis by Vapor–Liquid–Solid (VLS) mechanism. • SiNWs contribution to absorption spectra enhancement of MEH-PPV:SiNWs nanocomposites. • Decrease of PL intensity of MEH-PPV by addition of SiNWs. • Charge transfer process was taken place. • ITO/MEH-PPV:SiNWs/Al structure shows a photovoltaic effect, with a FF of 0.32.

  13. High Throughput Nanofabrication of Silicon Nanowire and Carbon Nanotube Tips on AFM Probes by Stencil-Deposited Catalysts

    DEFF Research Database (Denmark)

    Engstrøm, Daniel Southcott; Savu, Veronica; Zhu, Xueni;

    2011-01-01

    A new and versatile technique for the wafer scale nanofabrication of silicon nanowire (SiNW) and multiwalled carbon nanotube (MWNT) tips on atomic force microscope (AFM) probes is presented. Catalyst material for the SiNW and MWNT growth was deposited on prefabricated AFM probes using aligned wafer...

  14. Highly robust silicon nanowire/graphene core-shell electrodes without polymeric binders

    Science.gov (United States)

    Lee, Sang Eon; Kim, Han-Jung; Kim, Hwanjin; Park, Jong Hyeok; Choi, Dae-Geun

    2013-09-01

    A large theoretical charge storage capacity along with a low discharge working potential renders silicon a promising anode material for high energy density lithium ion batteries. However, up to 400% volume expansion during charge-discharge cycling coupled with a low intrinsic electronic conductivity causes pulverization and fracture, thus inhibiting silicon's widespread use in practical applications. We report herein on a low cost approach to fabricate hybrid silicon nanowire (SiNW)/graphene nanostructures that exhibit enhanced cycle performance with the capability of retaining more than 90% of their initial capacity after 50 cycles. We also demonstrate the use of hot-pressing in the absence of any common polymer binder such as PVDF to bind the hybrid structure to the current collector. The applied heat and pressure ensure strong adhesion between the SiNW/graphene nano-composite and current collector. This facile yet strong binding method is expected to find use in the further development of polymer-binder free anodes for lithium ion batteries.A large theoretical charge storage capacity along with a low discharge working potential renders silicon a promising anode material for high energy density lithium ion batteries. However, up to 400% volume expansion during charge-discharge cycling coupled with a low intrinsic electronic conductivity causes pulverization and fracture, thus inhibiting silicon's widespread use in practical applications. We report herein on a low cost approach to fabricate hybrid silicon nanowire (SiNW)/graphene nanostructures that exhibit enhanced cycle performance with the capability of retaining more than 90% of their initial capacity after 50 cycles. We also demonstrate the use of hot-pressing in the absence of any common polymer binder such as PVDF to bind the hybrid structure to the current collector. The applied heat and pressure ensure strong adhesion between the SiNW/graphene nano-composite and current collector. This facile yet strong

  15. Thermal stability of comp ound stucture of silicon nanowire encapsulated in carb on nanotub es%碳纳米管包裹的硅纳米线复合结构的热稳定性研究∗

    Institute of Scientific and Technical Information of China (English)

    卢顺顺; 张晋敏; 郭笑天; 高廷红; 田泽安; 何帆; 贺晓金; 吴宏仙; 谢泉

    2016-01-01

    To guide the experiment research, the thermal stability of composite silicon nanowire encapsulated in carbon nanotubes is investigated by computer simulation. The cubic-diamond-structured silicon nanowires with the same diameter and [111] orientationt are filled in some armchaired single-walled carbon nanotubes. The heat process of compound structure of silicon nanowire encapsulated in carbon nanotubes is simulated by classical molecular dynamic method. Through the visualization and energy analysis method, the thermal stability of composite structure is studied. The changes in the thermal stability of silicon nanowires and carbon nanotubes are explained by the relationship between carbon nanotube space constraint and van der Waals force. It is found that the diameter of the carbon nanotubes is closely related to the thermal stability of silicon nanowires inside. When the nanotube diameter is small, thermal stability of silicon nanowires increases;when the nanotube diameter increases up to a certain size, the thermal stability of silicon nanowires will suddenly drop significantly: until the distance between silicon nanowires and the wall of carbon nanotube is greater than 1 nm, the thermal stability of silicon nanowires will be restored. On the other hand, silicon nanowires filled into the carbon nanotubes have an effect of reducing the thermal stability of carbon nanotubes.

  16. Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates

    Science.gov (United States)

    Chatterjee, Sulagna; Chattopadhyay, Sanatan

    2017-01-01

    In the current work, an analytical model has been developed to estimate the amount of induced stress in nanowires which are horizontally embedded with different fractions within an Insulator-on-Silicon substrate. For estimating such stress, different crystallographic orientations of substrates and embedded nanowires have been considered. The induced stress for both the difference in thermo-elastic constants and lattice-mismatch is included and accuracy of the analytical model has been verified with the similar results obtained from ANSYS Multiphysics. Induced stress is observed to be insensitive of the nanowire size, however, depends significantly on the fractional insertion of the nanowires. A tensile stress of 1.95 GPa and a compressive stress of -1.0719 GPa have been obtained for the oriented Si-nanowires. Hole mobility of 850 cm2/Vs can be achieved for the 3/4th insertion of the nanowires which is comparable to electron mobility and therefore can be utilized for the design of symmetric nano-electronic devices.

  17. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    Science.gov (United States)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  18. Membrane Protein Incorporation into Nano-Bioelectronics: An insight into Rhodopsin Controlled SiNW-FET Devices

    Science.gov (United States)

    Tunuguntla, Ramya

    that the manipulation of lipid composition can indeed control orientation of an asymmetrically charged membrane protein, proteorhodopsin, in liposomes. One-dimensional inorganic nanostructures, which have critical dimensions comparable to the sizes of biological molecules, form an excellent materials platform for building such integrated structures. Researchers already use silicon nanowire-based field effect transistors functionalized with molecular recognition sites in a diverse array of biosensors. In our group, we have been developing a platform for integration of membrane protein functionality and electronic devices using a 1-D phospholipid bilayer device architecture. In these devices, the membrane proteins reside within the lipid bilayer that covers a nanowire channel of a field-effect transistor. This lipid bilayer performs several functions: it shields the nanowire from the solution species; it serves as a native-like environment for membrane proteins and preserves their functionality, integrity, and even vectorality. In this work, we show that a 1-D bilayer device incorporating a rhodopsin proton pump allows us to couple light-driven proton transport to a bioelectronic circuit. We also report that we were able to adapt another distinctive feature of biological signal processing---their widespread use of modifiers, co-factors, and mediator molecules---to regulate and fine-tune the operational characteristics of the bioelectronic device. In our example, we use co-assembly of protein channels and ionophores in the 1-D bilayer to modify the device output levels and response time.

  19. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  20. All-carbon graphene bioelectronics.

    Science.gov (United States)

    Nam, Sungwoo; Chun, Sunggyu; Choi, Jonghyun

    2013-01-01

    We report nano field-effect transistor (nanoFET) biosensors built from the monolithic integration of graphene and graphite. The monolithic integration enables nanoscopic field-effect detection of chemical and biological signals with mechanically flexible and robust interface with biological systems in several respects. Our nanoFET biosensors exhibit superior detection sensitivity, mechanical flexibility and nanoscopic detection resolution. First, we demonstrate that electrical detection can be achieved from nanoscale electric field modulation of the graphene channel while the signal integrity is not perturbed by mechanical deflection of graphene nanoFET sensors. Such capability is introduced by the advanced design of monolithic graphene-graphite without any need for metal-graphene heterointerfaces. Second, we explore the chemical detection capability of graphene nanoFET sensors, and show that our sensors are responsive to localized chemical environmental changes/perturbations. Our nanoFET sensors not only show clear response to nanoscopic charge perturbation but also demonstrate potential 3-D sensing capability due to the advanced monolithic graphene-graphite mechanical design. These unique capabilities of our monolithic graphene-graphite bioelectronics could be exploited in chemical and biological detection and conformal interface with biological systems in the future.

  1. Photonic light trapping in silicon nanowire arrays: deriving and overcoming the physical limitations

    CERN Document Server

    Schmitt, Sebastian W

    2016-01-01

    Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent photonic light concentration that enhances their performance as solar absorbers. Using numerical simulations we show, how light concentration is induced by high optical cross sections of the individual SiNWs but cannot be optimized independently of the SiNW array absorption. While an ideal spatial density exists, for which the SiNW array absorption for VIS and NIR wavelengths reaches a maximum, the spatial correlation of SiNWs in an array suppresses the formation of optical Mie modes responsible for light concentration. We show that different from SiNWs with straight sidewalls, arrays of inverted silicon nanocones (SiNCs) permit to avoid the mode suppression. In fact they give rise to an altered set of photonic modes which is induced by the spatial correlation of SiNCs in the...

  2. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

    Science.gov (United States)

    Habicht, S; Zhao, Q T; Feste, S F; Knoll, L; Trellenkamp, S; Ghyselen, B; Mantl, S

    2010-03-12

    We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.

  3. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  4. Graded index and randomly oriented core-shell silicon nanowires with broadband and wide angle antireflection for photovoltaic cell applications

    CERN Document Server

    Pignalosa, P; Qiao, L; Tseng, M; Yi, Yasha

    2011-01-01

    Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60\\degree) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

  5. Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

    Science.gov (United States)

    Gonchar, Kirill A.; Zubairova, Alsu A.; Schleusener, Alexander; Osminkina, Liubov A.; Sivakov, Vladimir

    2016-08-01

    Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5-15 % in the spectral region λ partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500-1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

  6. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  7. Electron-acoustic phonon interaction and mobility in stressed rectangular silicon nanowires

    Science.gov (United States)

    Zhu, Lin-Li

    2015-01-01

    We investigate the effects of pre-stress and surface tension on the electron-acoustic phonon scattering rate and the mobility of rectangular silicon nanowires. With the elastic theory and the interaction Hamiltonian for the deformation potential, which considers both the surface energy and the acoustoelastic effects, the phonon dispersion relation for a stressed nanowire under spatial confinement is derived. The subsequent analysis indicates that both surface tension and pre-stress can dramatically change the electron-acoustic phonon interaction. Under a negative (positive) surface tension and a tensile (compressive) pre-stress, the electron mobility is reduced (enhanced) due to the decrease (increase) of the phonon energy as well as the deformation-potential scattering rate. This study suggests an alternative approach based on the strain engineering to tune the speed and the drive current of low-dimensional electronic devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 11472243, 11302189, and 11321202), the Doctoral Fund of Ministry of Education of China (Grant No. 20130101120175), the Zhejiang Provincial Qianjiang Talent Program, China (Grant No. QJD1202012), and the Educational Commission of Zhejiang Province, China (Grant No. Y201223476).

  8. Surface-Coating Regulated Lithiation Kinetics and Degradation in Silicon Nanowires for Lithium Ion Battery

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Langli; Yang, Hui; Yan, Pengfei; Travis, Jonathan J.; Lee, Younghee; Liu, Nian; Piper, Daniela M.; Lee, Se-Hee; Zhao, Peng; George, Steven M.; Zhang, Jiguang; Cui, Yi; Zhang, Sulin; Ban, Chunmei; Wang, Chong M.

    2015-05-26

    Silicon (Si)-based materials hold promise as the next-generation anodes for high-energy lithium (Li)-ion batteries. Enormous research efforts have been undertaken to mitigate the chemo-mechanical failure due to the large volume changes of Si during lithiation and delithiation cycles. It has been found nanostructured Si coated with carbon or other functional materials can lead to significantly improved cyclability. However, the underlying mechanism and comparative performance of different coatings remain poorly understood. Herein, using in situ transmission electron microscopy (TEM) through a nanoscale half-cell battery, in combination with chemo-mechanical simulation, we explored the effect of thin (~5 nm) alucone and Al2O3 coatings on the lithiation kinetics of Si nanowires (SiNWs). We observed that the alucone coating leads to a “V-shaped” lithiation front of the SiNWs , while the Al2O3 coating yields an “H-shaped” lithiation front. These observations indicate that the difference between the Li surface diffusivity and bulk diffusivity of the coatings dictates lithiation induced morphological evolution in the nanowires. Our experiments also indicate that the reaction rate in the coating layer can be the limiting step for lithiation and therefore critically influences the rate performance of the battery. Further, the failure mechanism of the Al2O3 coated SiNWs was also explored. Our studies shed light on the design of high capacity, high rate and long cycle life Li-ion batteries.

  9. Surface-coating regulated lithiation kinetics and degradation in silicon nanowires for lithium ion battery.

    Science.gov (United States)

    Luo, Langli; Yang, Hui; Yan, Pengfei; Travis, Jonathan J; Lee, Younghee; Liu, Nian; Piper, Daniela Molina; Lee, Se-Hee; Zhao, Peng; George, Steven M; Zhang, Ji-Guang; Cui, Yi; Zhang, Sulin; Ban, Chunmei; Wang, Chong-Min

    2015-05-26

    Silicon (Si)-based materials hold promise as the next-generation anodes for high-energy lithium (Li)-ion batteries. Enormous research efforts have been undertaken to mitigate the chemo-mechanical failure due to the large volume changes of Si during lithiation and delithiation cycles. It has been found that nanostructured Si coated with carbon or other functional materials can lead to significantly improved cyclability. However, the underlying mechanism and comparative performance of different coatings remain poorly understood. Herein, using in situ transmission electron microscopy (TEM) through a nanoscale half-cell battery, in combination with chemo-mechanical simulation, we explored the effect of thin (∼5 nm) alucone and Al2O3 coatings on the lithiation kinetics of Si nanowires (SiNWs). We observed that the alucone coating leads to a "V-shaped" lithiation front of the SiNWs, while the Al2O3 coating yields an "H-shaped" lithiation front. These observations indicate that the difference between the Li surface diffusivity and bulk lithiation rate of the coatings dictates lithiation induced morphological evolution in the nanowires. Our experiments also indicate that the reaction rate in the coating layer can be the limiting step for lithiation and therefore critically influences the rate performance of the battery. Further, the failure mechanism of the Al2O3 coated SiNWs was also explored. Our studies shed light on the design of high capacity, high rate and long cycle life Li-ion batteries.

  10. Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications

    Science.gov (United States)

    Namdari, Pooria; Daraee, Hadis; Eatemadi, Ali

    2016-09-01

    The application of silicon nanowire (SiNW) biosensor as a subtle, label-free, and electrical tool has been extensively demonstrated by several researchers over the past few decades. Human ability to delicately fabricate and control its chemical configuration, morphology, and arrangement either separately or in combination with other materials as lead to the development of a nanomaterial with specific and efficient electronic and catalytic properties useful in the fields of biological sciences and renewable energy. This review illuminates on the various synthetic methods of SiNW, with its optical and electrical properties that make them one of the most applicable nanomaterials in the field of biomolecule sensing, photoelectrochemical conversion, and diseases diagnostics.

  11. Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications

    Institute of Scientific and Technical Information of China (English)

    YANG Cheng; ZHANG Gang; LEE Dae-Young; LI Hua-Min; LIM Young-Dae; Y00 Won Jong; PARK Young-Jun; KIM Jong-Min

    2011-01-01

    Self-assembly of silicon nanowire(SiNW)arrays is studied using SF6/02 plasma treatment. The self-assembly method can be applied to single- and poly-crystalline Si substrates. Plasma conditions can control the length and diameter of the SiNW arrays. Lower reflectance of the wire arrays over the wavelength range 200-1100nm is obtained. The conducting transparent indium-tin-oxide(ITO) electrode can be fully coated on the self-assembled SiNW arrays by sputtering. The ITO-coated SiNW solar cells show the same low surface light reflectance and a higher carrier collection efficiency than SiNW solar cells without ITO coating. An efficiency enhancement of around 3 times for ITO coated SiNW solar cells is demonstrated via experiments.

  12. Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage

    Institute of Scientific and Technical Information of China (English)

    Alireza Kargar

    2009-01-01

    A silicon nanowire (Si-NW) sensor for pH detection is presented.The conductance of the device is analytically obtained,demonstrating that the conductance increases with decreasing oxide thickness.To calculate the electrical conductance of the sensor,the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied.To improve the conductance and sensitivity,a Si-NW sensor with nanoscale side gate voltage is offered and its characteristics are theoretically achieved.It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages.This effect is compared to a similar fabricated structure in the literature,which has a wire with a rectangular cross section.Finally,the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.

  13. Broadband light absorption of silicon nanowires embedded in Ag nano-hole arrays

    Science.gov (United States)

    Rao, Lei; Ji, Chun-Lei; Li, Ming

    2016-09-01

    Silicon nanowires (SiNWs) embedded in Ag nano-hole arrays with broadband light absorption is proposed in this paper. Finite Difference Time Domain (FDTD) simulations were utilized to obtain absorptivity and band diagrams for both SiNWs and SiNWs embedded in Ag nano-hole arrays. A direct relationship between waveguide modes and extraordinary absorptivity is established qualitatively, which helps to optimal design the structure parameters to achieve broadband absorptivity. After introducing Ag nano-hole arrays at the rear side of SiNWs, the band modes are extended into leaky regions and light energy can be fully absorbed, resulting in high absorptivity at long wavelength. Severe reflection is also suppressed by light trapping capability of SiNWs at short wavelength. Over 70% average absorptivity from 400 nm to 1100 nm is realized finally. This kinds of design give promising route for high efficiency solar cells and optical absorbers.

  14. Broadband light absorption of silicon nanowires embedded in Ag nano-hole arrays

    Directory of Open Access Journals (Sweden)

    Lei Rao

    2016-09-01

    Full Text Available Silicon nanowires (SiNWs embedded in Ag nano-hole arrays with broadband light absorption is proposed in this paper. Finite Difference Time Domain (FDTD simulations were utilized to obtain absorptivity and band diagrams for both SiNWs and SiNWs embedded in Ag nano-hole arrays. A direct relationship between waveguide modes and extraordinary absorptivity is established qualitatively, which helps to optimal design the structure parameters to achieve broadband absorptivity. After introducing Ag nano-hole arrays at the rear side of SiNWs, the band modes are extended into leaky regions and light energy can be fully absorbed, resulting in high absorptivity at long wavelength. Severe reflection is also suppressed by light trapping capability of SiNWs at short wavelength. Over 70% average absorptivity from 400 nm to 1100 nm is realized finally. This kinds of design give promising route for high efficiency solar cells and optical absorbers.

  15. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Dalchiele, E.A., E-mail: dalchiel@fing.edu.u [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Martin, F.; Leinen, D. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga, Campus de Teatinos s/n, E29071 Malaga (Spain); Marotti, R.E. [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Ramos-Barrado, J.R. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga, Campus de Teatinos s/n, E29071 Malaga (Spain)

    2010-01-31

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  16. {Ni4O4} Cluster Complex to Enhance the Reductive Photocurrent Response on Silicon Nanowire Photocathodes

    Directory of Open Access Journals (Sweden)

    Yatin J. Mange

    2017-02-01

    Full Text Available Metal organic {Ni4O4} clusters, known oxidation catalysts, have been shown to provide a valuable route in increasing the photocurrent response on silicon nanowire (SiNW photocathodes. {Ni4O4} clusters have been paired with SiNWs to form a new photocathode composite for water splitting. Under AM1.5 conditions, the combination of {Ni4O4} clusters with SiNWs gave a current density of −16 mA/cm2, which corresponds to an increase in current density of 60% when compared to bare SiNWs. The composite electrode was fully characterised and shown to be an efficient and stable photocathode for water splitting.

  17. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Shailendra K., E-mail: shailendra.saxena3@gmail.com; Rai, Hari. M.; Late, Ravikiran [Material Research Laboratory, Discipline of Physics, School of Basic Sciences, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India); Sagdeo, Pankaj R.; Kumar, Rajesh [Material Research Laboratory, Discipline of Physics, School of Basic Sciences, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India); Material Science and Engineering Group, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India)

    2015-05-15

    In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence.

  18. Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing.

    Science.gov (United States)

    Chang, Chia-Chi; Chen, Haitian; Chen, Chun-Chung; Hung, Wei-Hsuan; Hsu, I-Kai; Theiss, Jesse; Zhou, Chongwu; Cronin, Stephen B

    2011-07-29

    We study the effect of polarized laser annealing on the crystalline structure of individual crystalline-amorphous core-shell silicon nanowires (NWs) using Raman spectroscopy. The crystalline fraction of the annealed spot increases dramatically from 0 to 0.93 with increasing incident laser power. We observe Raman lineshape narrowing and frequency hardening upon laser annealing due to the growth of the crystalline core, which is confirmed by high resolution transmission electron microscopy (HRTEM). The anti-Stokes:Stokes Raman intensity ratio is used to determine the local heating temperature caused by the intense focused laser, which exhibits a strong polarization dependence in Si NWs. The most efficient annealing occurs when the laser polarization is aligned along the axis of the NWs, which results in an amorphous-crystalline interface less than 0.5 µm in length. This paper demonstrates a new approach to control the crystal structure of NWs on the sub-micron length scale.

  19. Photodetection and transport properties of surface capped silicon nanowires arrays with polyacrylic acid

    Directory of Open Access Journals (Sweden)

    Kamran Rasool

    2013-08-01

    Full Text Available Efficient hybrid photodetector consisting of silicon nanowires (SiNWs (∼40 μm capped with Polyacrylic Acid (PAA is demonstrated. Highly diluted PAA with deionized (DI water was spun directly on vertical SiNW arrays prepared by metal assisted electroless chemical etching (MACE technique. We have observed ∼9, 4 and 9 times enhancement in responsivity, detectivity and external quantum efficiency in SiNWs/PAA hybrid device in comparison to SiNWs only device. Higher electrical current and photodetection may be due to the increment of hydrophilic content (acceptor like states on SiNWs interface. The higher photosensitivity can also be attributed to the presence of low refractive index PAA around SiNWs which causes funneling of photon energy into SiNWs. Surface roughness of SiNWs leads to immobilization of charge carriers and hence shows persistent photoconductivity.

  20. The morphology of silicon nanowires grown in the presence of trimethylaluminium

    Energy Technology Data Exchange (ETDEWEB)

    Oehler, F; Gentile, P; Hertog, M Den; Rouviere, J [CEA, INAC, Minatec, F-38054 Grenoble (France); Baron, T [LTM/CNRS/UJF/Grenoble-INP, 17 Rue des Martyrs, F-38054 Grenoble (France); Ferret, P [CEA, LETI, F-38054 Grenoble (France)], E-mail: fabrice.oehler@cea.fr, E-mail: pascal.gentile@cea.fr

    2009-06-17

    The effects of trimethylaluminium (TMA) on silicon nanowires grown by chemical vapour deposition (CVD) were investigated in the 650-850 deg. C growth temperature range. Gold was used as the growth catalyst and SiH{sub 4} in H{sub 2} carrier gas as the Si precursor. Depending on substrate temperature and TMA partial pressure, the structure's morphology evolves from wires to tapered needles, pyramids or nanotrees. The TMA presence was linked to two specific growth modes: an enhanced surface growth which forms Si needles and a branched growth leading to Si nanotrees. We suggest that competition between these two specific growth modes and the usual Au-catalyzed VLS growth is responsible for the observed morphology changes.

  1. Temperature and directional dependences of the infrared dielectric function of free standing silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Kazan, M.; Bruyant, A.; Sedaghat, Z.; Arnaud, L.; Blaize, S.; Royer, P. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, Universite de Technologie de Troyes, CNRS FRE 2848, 12 Rue Marie Curie, 10010 Troyes, Cedex (France)

    2011-03-15

    An approach to calculate the infrared dielectric function of semiconductor nanostructures is presented and applied to silicon (Si) nanowires (NW's). The phonon modes symmetries and frequencies are calculated by means of the elastic continuum medium theory. The modes strengths and damping are calculated from a model for lattice dynamics and perturbation theory. The data are used in anisotropic Lorentz oscillator model to generate the temperature and directional dependences of the infrared dielectric function of free standing Si NW's. Our results showed that in the direction perpendicular to the NW axis, the complex dielectric function is identical to that of bulk Si. However, along the NW axis, the infrared dielectric function is a strong function of the wavelength. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Bi-photon spectral correlation measurements from a silicon nanowire in the quantum and classical regimes

    CERN Document Server

    Jizan, Iman; Xiong, Chunle; Collins, Matthew J; Choi, Duk-Yong; Chae, Chang Joon; Liscidini, Marco; Steel, M J; Eggleton, Benjamin J; Clark, Alex S

    2014-01-01

    The growing requirement for photon pairs with specific spectral correlations in quantum optics experiments has created a demand for fast, high resolution and accurate source characterization. A promising tool for such characterization uses the classical stimulated process, in which an additional seed laser stimulates photon generation yielding much higher count rates, as recently demonstrated for a $\\chi^{(2)}$ integrated source in A.~Eckstein \\emph{et al.}, Laser Photon. Rev. \\textbf{8}, L76 (2014). In this work we extend these results to $\\chi^{(3)}$ sources, demonstrating spectral correlation measurements via stimulated four-wave mixing for the first time in a integrated optical waveguide, namely a silicon nanowire. We directly confirm the speed-up due to higher count rates and demonstrate that additional resolution can be gained when compared to traditional coincidence measurements. As pump pulse duration can influence the degree of spectral entanglement, all of our measurements are taken for two differen...

  3. Enhanced photovoltaic performance of organic/silicon nanowire hybrid solar cells by solution-evacuated method.

    Science.gov (United States)

    Wang, Wei-Li; Zou, Xian-Shao; Zhang, Bin; Dong, Jun; Niu, Qiao-Li; Yin, Yi-An; Zhang, Yong

    2014-06-01

    A method has been developed to fabricate organic-inorganic hybrid heterojunction solar cells based on n-type silicon nanowire (SiNW) and poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) hybrid structures by evacuating the PEDOT:PSS solution with dip-dropping on the top of SiNWs before spin-coating (solution-evacuating). The coverage and contact interface between PEDOT:PSS and SiNW arrays can be dramatically enhanced by optimizing the solution-evacuated time. The maximum power conversion efficiency (PCE) reaches 9.22% for a solution-evacuated time of 2 min compared with 5.17% for the untreated pristine device. The improvement photovoltaic performance is mainly attributed to better organic coverage and contact with an n-type SiNW surface.

  4. Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

    Science.gov (United States)

    Wang, Hao; Han, Wei-Hua; Zhao, Xiao-Song; Zhang, Wang; Lyu, Qi-Feng; Ma, Liu-Hong; Yang, Fu-Hua

    2016-10-01

    We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source-drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K. Project supported partly by the National Key R & D Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813).

  5. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

    Science.gov (United States)

    Singh, Sangeeta; Sinha, Ruchir; Kondekar, P. N.

    2016-05-01

    In this paper, an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. It consists of axial nanowire heterostructure (silicide-intrinsic silicon-silicide) with three independent all-around gates, two gates are polarity control gates for dynamically reconfiguring the device polarity by modulating the effective Schottky barrier heights and a control gate switches the device ON and OFF. The most interesting features of the proposed structure are simplified fabrication process as the state-of-the-art for ion implantation and high thermal budget no more required for annealing. It is highly immune to process variations, doping control issues and random dopant fluctuations (RDF) and there are no mobility degradation issues related to high doping. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-type E-SiNW-SB-FET and 9 mV/dec for p-type E-SiNW-SB-FET for about five decades of current. Further, it resolves all the reliability related issues of IMOS as hot electron effects are no more limiting our device performance. It offers significant drive current of the order of 10-5-10-4 A and magnificently high ION/IOFF ratio of ∼108 along with the inherent advantages of symmetric device structure for its circuit realization.

  6. Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry.

    Science.gov (United States)

    Gonchar, Kirill A; Zubairova, Alsu A; Schleusener, Alexander; Osminkina, Liubov A; Sivakov, Vladimir

    2016-12-01

    Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5-15 % in the spectral region λ < 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500-1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

  7. Phonon transport in silicon nanowires: The reduced group velocity and surface-roughness scattering

    Science.gov (United States)

    Zhu, Liyan; Li, Baowen; Li, Wu

    2016-09-01

    Using a linear-scaling Kubo simulation approach, we have quantitatively investigated the effects of confinement and surface roughness on phonon transport in silicon nanowires (SiNWs) as thick as 55 nm in diameter R . The confinement effect leads to significant reduction of phonon group velocity v in SiNWs compared to bulk silicon except at extremely low phonon frequencies f , which very likely persists in SiNWs several hundreds of nanometers thick, suggesting the inapplicability of bulk properties, including anharmonic phonon scattering, to SiNWs. For instance, the velocity can be reduced by more than 30% for phonons with f >4.5 THz in 55-nm-thick nanowires. In rough SiNWs Casimir's limit, which is valid in confined macroscopic systems, can underestimate the surface scattering by more than one order of magnitude. For a roughness profile with Lorentzian correlation characterized by root-mean-square roughness σ and correlation length Lr, the frequency-dependent phonon diffusivity D follows power-law dependences D ∝Rασ-βLrγ , where α ˜2 and β ˜1 . On average, γ increases from 0 to 0.5 as R /σ increases. The mean free path and the phonon lifetime essentially follow the same power-law dependences. These dependences are in striking contrast to Casimir's limit, i.e., D ˜v R /3 , and manifest the dominant role of the change in the number of atoms due to roughness. The thermal conductivity κ can vary by one order of magnitude with varying σ and Lr in SiNWs, and increasing σ and shortening Lr can efficiently lower κ below Casimir's limit by one order of magnitude. Our work provides different insights to understand the ultralow thermal conductivity of SiNWs reported experimentally and guidance to manipulate κ via surface roughness engineering.

  8. Label-Free Direct Detection of miRNAs with Poly-Silicon Nanowire Biosensors

    Science.gov (United States)

    Gong, Changguo; Qi, Jiming; Xiao, Han; Jiang, Bin; Zhao, Yulan

    2015-01-01

    Background The diagnostic and prognostic value of microRNAs (miRNAs) in a variety of diseases is promising. The novel silicon nanowire (SiNW) biosensors have advantages in molecular detection because of their high sensitivity and fast response. In this study, poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) device was developed to achieve specific and ultrasensitive detection of miRNAs without labeling and amplification. Methods The poly-SiNW FET was fabricated by a top–down Complementary Metal Oxide Semiconductor (CMOS) wafer fabrication based technique. Single strand DNA (ssDNA) probe was bind to the surface of the poly-SiNW device which was silanated and aldehyde-modified. By comparing the difference of resistance value before and after ssDNA and miRNA hybridization, poly-SiNW device can be used to detect standard and real miRNA samples. Results Poly-SiNW device with different structures (different line width and different pitch) was applied to detect standard Let-7b sample with a detection limitation of 1 fM. One-base mismatched sequence could be distinguished meanwhile. Furthermore, these poly-SiNW arrays can detect snRNA U6 in total RNA samples extracted from HepG2 cells with a detection limitation of 0.2 μg/mL. In general, structures with pitch showed better results than those without pitch in detection of both Let-7b and snRNA U6. Moreover, structures with smaller pitch showed better detection efficacy. Conclusion Our findings suggest that poly-SiNW arrays could detect standard and real miRNA sample without labeling or amplification. Poly-SiNW biosensor device is promising for miRNA detection. PMID:26709827

  9. A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping.

    Science.gov (United States)

    Kanungo, Pratyushdas; Kögler, Reinhard; Werner, Peter; Gösele, Ulrich; Skorupa, Wolfgang

    2009-11-08

    We demonstrate a novel method to fabricate an axial p-n junction inside oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.

  10. Ultrathin, flexible organic-inorganic hybrid solar cells based on silicon nanowires and PEDOT:PSS.

    Science.gov (United States)

    Sharma, Manisha; Pudasaini, Pushpa Raj; Ruiz-Zepeda, Francisco; Elam, David; Ayon, Arturo A

    2014-03-26

    Recently, free-standing, ultrathin, single-crystal silicon (c-Si) membranes have attracted considerable attention as a suitable material for low-cost, mechanically flexible electronics. In this paper, we report a promising ultrathin, flexible, hybrid solar cell based on silicon nanowire (SiNW) arrays and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The free-standing, ultrathin c-Si membranes of different thicknesses were produced by KOH etching of double-side-polished silicon wafers for various etching times. The processed free-standing silicon membranes were observed to be mechanically flexible, and in spite of their relatively small thickness, the samples tolerated the different steps of solar cell fabrication, including surface nanotexturization, spin-casting, dielectric film deposition, and metallization. However, in terms of the optical performance, ultrathin c-Si membranes suffer from noticeable transmission losses, especially in the long-wavelength region. We describe the experimental performance of a promising light-trapping scheme in the aforementioned ultrathin c-Si membranes of thicknesses as small as 5.7 μm employing front-surface random SiNW texturization in combination with a back-surface distribution of silver (Ag) nanoparticles (NPs). We report the enhancement of both the short-circuit current density (JSC) and the open-circuit voltage (VOC) that has been achieved in the described devices. Such enhancement is attributable to the plasmonic backscattering effect of the back-surface Ag NPs, which led to an overall 10% increase in the power conversion efficiency (PCE) of the devices compared to similar structures without Ag NPs. A PCE in excess of 6.62% has been achieved in the described devices having a c-Si membrane of thickness 8.6 μm. The described device technology could prove crucial in achieving an efficient, low-cost, mechanically flexible photovoltaic device in the near future.

  11. Quantifying the size-dependent effect of the residual surface stress on the resonant frequencies of silicon nanowires if finite deformation kinematics are considered.

    Science.gov (United States)

    Park, Harold S

    2009-03-18

    There are two major objectives to the present work. The first objective is to demonstrate that, in contrast to predictions from linear surface elastic theory, when nonlinear, finite deformation kinematics are considered, the residual surface stress does impact the resonant frequencies of silicon nanowires. The second objective of this work is to delineate, as a function of nanowire size, the relative contributions of both the residual (strain-independent) and the surface elastic (strain-dependent) parts of the surface stress to the nanowire resonant frequencies. Both goals are accomplished by using the recently developed surface Cauchy-Born model, which accounts for nanoscale surface stresses through a nonlinear, finite deformation continuum mechanics model that leads to the solution of a standard finite element eigenvalue problem for the nanowire resonant frequencies. In addition to demonstrating that the residual surface stress does impact the resonant frequencies of silicon nanowires, we further show that there is a strong size dependence to its effect; in particular, we find that consideration of the residual surface stress alone leads to significant errors in predictions of the nanowire resonant frequency, with an increase in error with decreasing nanowire size. Correspondingly, the strain-dependent part of the surface stress is found to have an increasingly important effect on the resonant frequencies of the nanowires with decreasing nanowire size.

  12. Near-infrared quarter-waveplate with near-unity polarization conversion efficiency based on silicon nanowire array.

    Science.gov (United States)

    Dai, Yanmeng; Cai, Hongbing; Ding, Huaiyi; Ning, Zhen; Pan, Nan; Zhu, Hong; Shi, Qinwei; Wang, Xiaoping

    2015-04-06

    Metasurfaces made of subwavelength resonators can modify the wave front of light within the thickness much less than free space wavelength, showing great promises in integrated optics. In this paper, we theoretically show that electric and magnetic resonances supported simultaneously by a subwavelength nanowire with high refractive-index can be utilized to design metasurfaces with near-unity transmittance. Taking silicon nanowire for instance, we design numerically a near-infrared quarter-waveplate with high transmittance using a subwavelength nanowire array. The operation bandwidth of the waveplate is 0.14 μm around the center wavelength of 1.71 μm. The waveplate can convert a 45° linearly polarized incident light to circularly polarized light with conversion efficiency ranging from 94% to 98% over the operation band. The performance of quarter waveplate can in principle be tuned and improved through optimizing the parameters of nanowire arrays. Its compatibility to microelectronic technologies opens up a distinct possibility to integrate nanophotonics into the current silicon-based electronic devices.

  13. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.

    Science.gov (United States)

    Zhang, Yunyan; Aagesen, Martin; Holm, Jeppe V; Jørgensen, Henrik I; Wu, Jiang; Liu, Huiyun

    2013-08-14

    We realize the growth of self-catalyzed GaAsP nanowires (NWs) on silicon (111) substrates using solid-source molecular beam epitaxy. By optimizing the V/III and P/As flux ratios, as well as the Ga flux, high-crystal-quality GaAsP NWs have been demonstrated with almost pure zinc-blende phase. Comparing the growth of GaAsP NWs with that of the conventional GaAs NWs indicates that the incorporation of P has significant effects on catalyst nucleation energy, and hence the nanowire morphology and crystal quality. In addition, the incorporation ratio of P/As between vapor-liquid-solid NW growth and the vapor-solid thin film growth has been compared, and the difference between these two growth modes is explained through growth kinetics. The vapor-solid epitaxial growth of radial GaAsP shell on core GaAsP NWs is further demonstrated with room-temperature emission at ~710 nm. These results give valuable new information into the NW nucleation mechanisms and open up new perspectives for integrating III-V nanowire photovoltaics and visible light emitters on a silicon platform by using self-catalyzed GaAsP core-shell nanowires.

  14. Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

    Science.gov (United States)

    Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

    2012-11-14

    A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used.

  15. The antimicrobial effect of silicon nanowires decorated with silver and copper nanoparticles

    Science.gov (United States)

    Fellahi, Ouarda; Sarma, Rupak K.; Das, Manash R.; Saikia, Ratul; Marcon, Lionel; Coffinier, Yannick; Hadjersi, Toufik; Maamache, Mustapha; Boukherroub, Rabah

    2013-12-01

    The paper reports on the preparation and antibacterial activity of silicon nanowire (SiNW) substrates coated with Ag or Cu nanoparticles (NPs) against Escherichia coli (E. coli) bacteria. The substrates are easily prepared using the metal-assisted chemical etching of crystalline silicon in hydrofluoric acid/silver nitrate (HF/AgNO3) aqueous solution. Decoration of the SiNWs with metal NPs is achieved by simple immersion in HF aqueous solutions containing silver or copper salts. The SiNWs coated with Ag NPs are biocompatible with human lung adenocarcinoma epithelial cell line A549 while possessing strong antibacterial properties to E. coli. In contrast, the SiNWs decorated with Cu NPs showed higher cytotoxicity and slightly lower antibacterial activity. Moreover, it was also observed that leakage of sugars and proteins from the cell wall of E. coli in interaction with SiNWs decorated with Ag NPs is higher compared to SiNWs modified with Cu NPs.

  16. Texturing of the Silicon Substrate with Nanopores and Si Nanowires for Anti-reflecting Surfaces of Solar Cells

    Directory of Open Access Journals (Sweden)

    A.A. Druzhinin

    2015-06-01

    Full Text Available The paper presents the prospects of obtaining a functional multi-layer anti-reflecting coating of the front surface of solar cells by texturing the surface of the silicon by electrochemical etching. The physical model of the "Black Si" coating with discrete inhomogeneity of the refractive index and technological aspects of producing of "Black Si" functional anti-reflecting coatings were presented. The investigation results of the spectral characteristics of the obtained multilayer multiporous "Black Si" coatings for silicon solar cells made by electrochemical etching are presented. The possibility of creating the texture on a silicon wafer surface using silicon nanowires and ordered nanopores obtained by metal-assisted chemical etching was shown.

  17. Superamphiphobic Silicon-Nanowire-Embedded Microsystem and In-Contact Flow Performance of Gas and Liquid Streams.

    Science.gov (United States)

    Ko, Dong-Hyeon; Ren, Wurong; Kim, Jin-Oh; Wang, Jun; Wang, Hao; Sharma, Siddharth; Faustini, Marco; Kim, Dong-Pyo

    2016-01-26

    Gas and liquid streams are invariably separated either by a solid wall or by a membrane for heat or mass transfer between the gas and liquid streams. Without the separating wall, the gas phase is present as bubbles in liquid or, in a microsystem, as gas plugs between slugs of liquid. Continuous and direct contact between the two moving streams of gas and liquid is quite an efficient way of achieving heat or mass transfer between the two phases. Here, we report a silicon nanowire built-in microsystem in which a liquid stream flows in contact with an underlying gas stream. The upper liquid stream does not penetrate into the lower gas stream due to the superamphiphobic nature of the silicon nanowires built into the bottom wall, thereby preserving the integrity of continuous gas and liquid streams, although they are flowing in contact. Due to the superamphiphobic nature of silicon nanowires, the microsystem provides the best possible interfacial mass transfer known to date between flowing gas and liquid phases, which can achieve excellent chemical performance in two-phase organic syntheses.

  18. Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology

    Science.gov (United States)

    Bashouti, Muhammad Y.; Sardashti, Kasra; Schmitt, Sebastian W.; Pietsch, Matthias; Ristein, Jürgen; Haick, Hossam; Christiansen, Silke H.

    2013-02-01

    The ability to control physical properties of silicon nanowires (Si NWs) by designing their surface bonds is important for their applicability in devices in the areas of nano-electronics, nano-photonics, including photovoltaics and sensing. In principle a wealth of different molecules can be attached to the bare Si NW surface atoms to create e.g. Si-O, Si-C, Si-N, etc. to mention just the most prominent ones. Si-O bond formation, i.e. oxidation usually takes place automatically as soon as Si NWs are exposed to ambient conditions and this is undesired is since a defective oxide layer (i.e. native silicon dioxide - SiO2) can cause uncontrolled trap states in the band gap of silicon. Surface functionalization of Si NW surfaces with the aim to avoid oxidation can be carried out by permitting e.g. Si-C bond formation when alkyl chains are covalently attached to the Si NW surfaces by employing a versatile two-step chlorination/alkylation process that does not affect the original length and diameter of the NWs. Termination of Si NWs with alkyl molecules through covalent Si-C bonds can provide long term stability against oxidation of the Si NW surfaces. The alkyl chain length determines the molecular coverage of Si NW surfaces and thus the surface energy and next to simple Si-C bonds even bond types such as Cdbnd C and Ctbnd C can be realized. When integrating differently functionalized Si NWs in functional devices such as field effect transistors (FETs) and solar cells, the physical properties of the resultant devices vary.

  19. Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Berger, A; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Zhang, D; Clavel, R [Laboratory of Robotic Systems, Ecole Polytechnique Federale de Lausanne (EPFL), Station 9, CH-1015 Lausanne (Switzerland); Michler, J, E-mail: bjoern.eisenhawer@ipht-jena.de [Mechanics of Materials and Nanostructures Laboratory, EMPA-Materials Science and Technology, Feuerwerkstrasse 39, CH-3602 Thun (Switzerland)

    2011-02-18

    Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and highly doped silicon target material. p-n or p{sup ++}-p junctions located at the NW-silicon substrate interfaces were thus realized. To detect these junctions and visualize them the electron beam induced current technique and two-point probe current-voltage measurements were used, based on nanoprobing individual silicon NWs in a scanning electron microscope. Successful silicon NW doping by pulsed laser deposition of doped target material could experimentally be demonstrated. This doping strategy compared to the commonly used doping from the gas phase during chemical vapour deposition is evaluated essentially with a view to potentially overcoming the limitations of chemical vapour deposition doping, which shows doping inhomogeneities between the top and bottom of the NW as well as between the core and shell of NWs and structural lattice defects, especially when high doping levels are envisaged. The pulsed laser deposition doping technique yields homogeneously doped NWs and the doping level can be controlled by the choice of the target material. As a further benefit, this doping procedure does not require the use of poisonous gases and may be applied to grow not only silicon NWs but also other kinds of doped semiconductor NWs, e.g. group III nitrides or arsenides.

  20. Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

    Science.gov (United States)

    Dawood, M. K.; Tripathy, S.; Dolmanan, S. B.; Ng, T. H.; Tan, H.; Lam, J.

    2012-10-01

    We report on the structural and vibrational characterization of silicon (Si) nanowire arrays synthesized by metal-assisted chemical etching (MACE) of Si deposited with metal nanoparticles. Gold (Au) and silver (Ag) metal nanoparticles were synthesized by glancing angle deposition, and MACE was performed in a mixture of H2O2 and HF solution. We studied the structural differences between Au and Ag-etched Si nanowires. The morphology of the synthesized nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The optical and vibrational properties of the Si nanostructures were studied by photoluminescence and Raman spectroscopy using three different excitation sources (UV, visible, and near-infrared) and are correlated to their microstructures. The structural differences between Au-etched and Ag-etched nanowires are due to the higher degree of hole injection by the Au nanoparticle and diffusion into the Si nanowires, causing enhanced Si etching by HF on the nanowire surface. Au-etched nanowires were observed to be mesoporous throughout the nanowire while Ag-etched nanowires consisted of a thin porous layer around the crystalline core. In addition, the surface-enhanced resonant Raman scattering observed is attributed to the presence of the sunken metal nanoparticles. Such Si nanostructures may be useful for a wide range of applications such as photovoltaic and biological and chemical sensing.

  1. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D. [Department of Physics and School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Ha, Jong-Yoon; Krylyuk, S. [Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Davydov, A. V. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

    2015-03-28

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (V{sub OC}), short-circuit current density (J{sub SC}), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ∼10 W/cm{sup 2}. Higher values of V{sub OC} and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ∼8% and internal quantum efficiency of ∼90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400–650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  2. Reduced graphene oxide/silicon nanowire hetero- structures with enhanced photoactivity and superior photoelectrochemical stability

    Institute of Scientific and Technical Information of China (English)

    Xing Zhong[1; Gongming wang[1; Benjamin Papandrea[1; Mufan Li[1; Yuxi Xu[1; Yu Chen[2; Chih-Yen Chen[1; Hailong Zhou[1; Teng Xue[2; Yongjia Li[2; Dehui Li[1; Yu Huang[2,3; Xiangfeng Duan[1,3

    2015-01-01

    Silicon nanowires (SiNWs) have been widely studied as light harvesting antennas in photocatalysts due to their ability to absorb broad-spectrum solar radiation, but they are typically limited by poor photoelectrochemical stability. Here, we report the synthesis of reduced graphene oxide-SiNW (rGO-SiNW) heterostructures to achieve greatly improved photocatalytic activity and stability. The SiNWs were synthesized through a metal-assisted electroless etching process and functionalized with reduced graphene oxide (rGO) flakes through a chemical absorption process. Here, the rGO not only functions as a physical protection layer to isolate the SiNWs from the harsh electrochemical environment but also serves as a charge mediator to facilitate the charge separation and transport processes. Furthermore, the rGO may also function as a redox catalyst to ensure efficient utilization of photo-carriers for the desired chemical reactions. Photocatalytic dye degradation studies show that the photoactivity of the heterostructures can be significantly enhanced with an initial activation process and maintained without apparent decay over repeated reaction cycles. Electrochemical and photo- electrochemical studies indicate that the enhanced photoactivity and photostability can be attributed to the more efficient separation of photoexcited charge carriers in SiNWs and the reduced self-oxidation of the surface of the SiNWs during the photocatalytic dye degradation process. The ability to significantly improve the photocatalytic activity and stability in rGO-SiNW heterostructures can not only lead to more opportunities for the application of silicon-based photocatalysts/ photoelectrodes for solar energy harvesting but also provide new insights into the stabilization of other unstable photocatalytic systems

  3. Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

    Energy Technology Data Exchange (ETDEWEB)

    Georgobiani, V. A., E-mail: v.georgobiani@gmail.com; Gonchar, K. A.; Osminkina, L. A.; Timoshenko, V. Yu. [Lomonosov Moscow State University, Faculty of Physics (Russian Federation)

    2015-08-15

    Silicon-nanowire layers grown by the metal-assisted chemical etching of (100)-oriented p-type monocrystalline silicon substrates with a resistivity of 10 and 0.001 Ω · cm are studied by electron microscopy, Raman scattering, and photoluminescence measurements. It is established that nanowires grown on lightly doped substrates are structurally nonporous and formed as crystalline cores covered by nanocrystals 3–5 nm in dimensions. Nanowires grown on heavily doped substrates are structurally porous and contain both small nanocrystals and coarser crystallites with equilibrium charge carriers that influence interband radiative recombination. It is found that the photoluminescence intensity of nanowires in the spectral range 1.3–2.0 eV depends on the presence of molecular oxygen.

  4. Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint.

    Science.gov (United States)

    Accastelli, Enrico; Scarbolo, Paolo; Ernst, Thomas; Palestri, Pierpaolo; Selmi, Luca; Guiducci, Carlotta

    2016-03-15

    The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-gate transistors, such as silicon nanowires, are designed for high performance solid-state circuits thanks to their superior properties of voltage-to-current transduction, which can be advantageously exploited for pH sensing. A systematic study is carried out on rectangular-shaped nanowires developed in a complementary metal-oxide-semiconductor (CMOS)-compatible technology, showing that reducing the width of the devices below a few hundreds of nanometers leads to higher charge sensitivity. Moreover, devices composed of several wires in parallel further increase the exposed surface per unit footprint area, thus maximizing the signal-to-noise ratio. This technology allows a sub milli-pH unit resolution with a sensor footprint of about 1 µm², exceeding the performance of previously reported studies on silicon nanowires by two orders of magnitude.

  5. Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

    Directory of Open Access Journals (Sweden)

    Enrico Accastelli

    2016-03-01

    Full Text Available The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-gate transistors, such as silicon nanowires, are designed for high performance solid-state circuits thanks to their superior properties of voltage-to-current transduction, which can be advantageously exploited for pH sensing. A systematic study is carried out on rectangular-shaped nanowires developed in a complementary metal-oxide-semiconductor (CMOS-compatible technology, showing that reducing the width of the devices below a few hundreds of nanometers leads to higher charge sensitivity. Moreover, devices composed of several wires in parallel further increase the exposed surface per unit footprint area, thus maximizing the signal-to-noise ratio. This technology allows a sub milli-pH unit resolution with a sensor footprint of about 1 µm2, exceeding the performance of previously reported studies on silicon nanowires by two orders of magnitude.

  6. Graphene encapsulated and SiC reinforced silicon nanowires as an anode material for lithium ion batteries.

    Science.gov (United States)

    Yang, Yang; Ren, Jian-Guo; Wang, Xin; Chui, Ying-San; Wu, Qi-Hui; Chen, Xianfeng; Zhang, Wenjun

    2013-09-21

    Anode materials play a key role in the performance, in particular the capacity and lifetime, of lithium ion batteries (LIBs). Silicon has been demonstrated to be a promising anode material due to its high specific capacity, but pulverization during cycling and formation of an unstable solid-electrolyte interphase limit its cycle life. Herein, we show that anodes consisting of an active silicon nanowire (Si NW), which is surrounded by a uniform graphene shell and comprises silicon carbide nanocrystals, are capable of serving over 500 cycles in half cells at a high lithium storage capacity of 1650 mA h g(-1). In the anodes, the graphene shell provides a highly-conductive path and prevents direct exposure of Si NWs to electrolytes while the SiC nanocrystals may act as a rigid backbone to retain the integrity of the Si NW in its great deformation process caused by repetitive charging-discharging reactions, resulting in a stable cyclability.

  7. Silicon nanowire based biosensing platform for electrochemical sensing of Mebendazole drug activity on breast cancer cells.

    Science.gov (United States)

    Shashaani, Hani; Faramarzpour, Mahsa; Hassanpour, Morteza; Namdar, Nasser; Alikhani, Alireza; Abdolahad, Mohammad

    2016-11-15

    Electrochemical approaches have played crucial roles in bio sensing because of their Potential in achieving sensitive, specific and low-cost detection of biomolecules and other bio evidences. Engineering the electrochemical sensing interface with nanomaterials tends to new generations of label-free biosensors with improved performances in terms of sensitive area and response signals. Here we applied Silicon Nanowire (SiNW) array electrodes (in an integrated architecture of working, counter and reference electrodes) grown by low pressure chemical vapor deposition (LPCVD) system with VLS procedure to electrochemically diagnose the presence of breast cancer cells as well as their response to anticancer drugs. Mebendazole (MBZ), has been used as antitubulin drug. It perturbs the anodic/cathodic response of the cell covered biosensor by releasing Cytochrome C in cytoplasm. Reduction of cytochrome C would change the ionic state of the cells monitored by SiNW biosensor. By applying well direct bioelectrical contacts with cancer cells, SiNWs can detect minor signal transduction and bio recognition events, resulting in precise biosensing. Our device detected the trace of MBZ drugs (with the concentration of 2nM) on electrochemical activity MCF-7 cells. Also, experimented biological analysis such as confocal and Flowcytometry assays confirmed the electrochemical results.

  8. Assessing individual radial junction solar cells over millions on VLS-grown silicon nanowires.

    Science.gov (United States)

    Yu, Linwei; Rigutti, Lorenzo; Tchernycheva, Maria; Misra, Soumyadeep; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2013-07-12

    Silicon nanowires (SiNWs) grown on low-cost substrates provide an ideal framework for the monolithic fabrication of radial junction photovoltaics. However, the quality of junction formation over a random matrix of SiNWs, fabricated via a vapor-liquid-solid (VLS) mechanism, has never been assessed in a realistic context. To address this, we probe the current response of individual radial junction solar cells under electron-beam and optical-beam excitations. Excellent current generation from the radial junction units, compared to their planar counterparts, has been recorded, indicating a high junction quality and effective doping in the ultra-thin SiNWs with diameters thinner than 20 nm. Interestingly, we found that the formation of radial junctions by plasma deposition can be quite robust against geometrical disorder and even the crossings of neighboring cell units. These results provide a strong support to the feasibility of building high-quality radial junction solar cells over high-throughput VLS-grown SiNWs on low-cost substrates.

  9. Effect of chain length on the sensing of volatile organic compounds by means of silicon nanowires.

    Science.gov (United States)

    Wang, Bin; Haick, Hossam

    2013-06-26

    Molecularly modified silicon nanowire field effect transistors (SiNW FETs) are starting to appear as promising devices for sensing various volatile organic compounds (VOCs). Understanding the connection between the molecular layer structure attached to the SiNWs and VOCs is essential for the design of high performance sensors. Here, we explore the chain length influence of molecular layers on the sensing performance to polar and nonpolar VOCs. SiNW FETs were functionalized with molecular layers that have similar end (methyl) group and amide bridge bond, but differ in their alkyl chain lengths. The resulting devices were then exposed to polar and nonpolar VOCs in various concentrations. Our results showed that the sensing response to changing the threshold voltage (ΔVth) and changing the relative hole mobility (Δμh/μh-a) have a proportional relationship to the VOC concentration. On exposure to a specific VOC concentration, ΔVth response increased with the chain length of the molecular modification. In contrast, Δμh/μh-a did not exhibit any obvious reliance on the chain length of the molecular layer. Analysis of the responses with an electrostatic-based model suggests that the sensor response in ΔVth is dependent on the VOC concentration, VOC vapor pressure, VOC-molecular layer binding energy, and VOC adsorption-induced dipole moment changes of molecular layer.

  10. Enhanced sensing of nonpolar volatile organic compounds by silicon nanowire field effect transistors.

    Science.gov (United States)

    Paska, Yair; Stelzner, Thomas; Christiansen, Silke; Haick, Hossam

    2011-07-26

    Silicon nanowire field effect transistors (Si NW FETs) are emerging as powerful sensors for direct detection of biological and chemical species. However, the low sensitivity of the Si NW FET sensors toward nonpolar volatile organic compounds (VOCs) is problematic for many applications. In this study, we show that modifying Si NW FETs with a silane monolayer having a low fraction of Si-O-Si bonds between the adjacent molecules greatly enhances the sensitivity toward nonpolar VOCs. This can be explained in terms of an indirect sensor-VOC interaction, whereby the nonpolar VOC molecules induce conformational changes in the organic monolayer, affecting (i) the dielectric constant and/or effective dipole moment of the organic monolayer and/or (ii) the density of charged surface states at the SiO(2)/monolayer interface. In contrast, polar VOCs are sensed directly via VOC-induced changes in the Si NW charge carriers, most probably due to electrostatic interaction between the Si NW and polar VOCs. A semiempirical model for the VOC-induced conductivity changes in the Si NW FETs is presented and discussed.

  11. Complementary metal oxide semiconductor-compatible silicon nanowire biofield-effect transistors as affinity biosensors.

    Science.gov (United States)

    Duan, Xuexin; Rajan, Nitin K; Izadi, Mohammad Hadi; Reed, Mark A

    2013-11-01

    Affinity biosensors use biorecognition elements and transducers to convert a biochemical event into a recordable signal. They provides the molecule binding information, which includes the dynamics of biomolecular association and dissociation, and the equilibrium association constant. Complementary metal oxide semiconductor-compatible silicon (Si) nanowires configured as a field-effect transistor (NW FET) have shown significant advantages for real-time, label-free and highly sensitive detection of a wide range of biomolecules. Most research has focused on reducing the detection limit of Si-NW FETs but has provided less information about the real binding parameters of the biomolecular interactions. Recently, Si-NW FETs have been demonstrated as affinity biosensors to quantify biomolecular binding affinities and kinetics. They open new applications for NW FETs in the nanomedicine field and will bring such sensor technology a step closer to commercial point-of-care applications. This article summarizes the recent advances in bioaffinity measurement using Si-NW FETs, with an emphasis on the different approaches used to address the issues of sensor calibration, regeneration, binding kinetic measurements, limit of detection, sensor surface modification, biomolecule charge screening, reference electrode integration and nonspecific molecular binding.

  12. Pulmonary Toxicity, Distribution, and Clearance of Intratracheally Instilled Silicon Nanowires in Rats.

    Science.gov (United States)

    Roberts, Jenny R; Mercer, Robert R; Chapman, Rebecca S; Cohen, Guy M; Bangsaruntip, Sarunya; Schwegler-Berry, Diane; Scabilloni, James F; Castranova, Vincent; Antonini, James M; Leonard, Stephen S

    Silicon nanowires (Si NWs) are being manufactured for use as sensors and transistors for circuit applications. The goal was to assess pulmonary toxicity and fate of Si NW using an in vivo experimental model. Male Sprague-Dawley rats were intratracheally instilled with 10, 25, 50, 100, or 250 μg of Si NW (~20-30 nm diameter; ~2-15 μm length). Lung damage and the pulmonary distribution and clearance of Si NW were assessed at 1, 3, 7, 28, and 91 days after-treatment. Si NW treatment resulted in dose-dependent increases in lung injury and inflammation that resolved over time. At day 91 after treatment with the highest doses, lung collagen was increased. Approximately 70% of deposited Si NW was cleared by 28 days with most of the Si NW localized exclusively in macrophages. In conclusion, Si NW induced transient lung toxicity which may be associated with an early rapid particle clearance; however, persistence of Si NW over time related to dose or wire length may lead to increased collagen deposition in the lung.

  13. Pulmonary Toxicity, Distribution, and Clearance of Intratracheally Instilled Silicon Nanowires in Rats

    Directory of Open Access Journals (Sweden)

    Jenny R. Roberts

    2012-01-01

    Full Text Available Silicon nanowires (Si NWs are being manufactured for use as sensors and transistors for circuit applications. The goal was to assess pulmonary toxicity and fate of Si NW using an in vivo experimental model. Male Sprague-Dawley rats were intratracheally instilled with 10, 25, 50, 100, or 250 μg of Si NW (~20–30 nm diameter; ~2–15 μm length. Lung damage and the pulmonary distribution and clearance of Si NW were assessed at 1, 3, 7, 28, and 91 days after-treatment. Si NW treatment resulted in dose-dependent increases in lung injury and inflammation that resolved over time. At day 91 after treatment with the highest doses, lung collagen was increased. Approximately 70% of deposited Si NW was cleared by 28 days with most of the Si NW localized exclusively in macrophages. In conclusion, Si NW induced transient lung toxicity which may be associated with an early rapid particle clearance; however, persistence of Si NW over time related to dose or wire length may lead to increased collagen deposition in the lung.

  14. Mode hybridization and conversion in silicon-on-insulator nanowires with angled sidewalls.

    Science.gov (United States)

    Dai, Daoxin; Zhang, Ming

    2015-12-14

    The mode property and light propagation in a tapered silicon-on-insulator (SOI) nanowire with angled sidewalls is analyzed. Mode hybridization is observed and mode conversion between the TM fundamental mode and higher-order TE modes happens when light propagates in a waveguide taper which is used very often in the design of photonic integrated devices. This mode conversion ratio is possible to be very high (even close to 100%) when the taper is long enough to be adiabatic, which might be useful for some applications of multimode photonics. When the mode conversion is undesired to avoid any excess loss as well as crosstalk for photonic integrated circuits, one can depress the mode conversion by compensating the vertical asymmetry in the way of reducing the sidewall angle or introducing an optimal refractive index for the upper-cladding. It is also possible to eliminate the undesired mode conversion almost and improve the desired mode conversion greatly by introducing an abrupt junction connecting two sections with different widths to jump over the mode hybridization region.

  15. Rapid Low-Temperature 3D Integration of Silicon Nanowires on Flexible Substrates.

    Science.gov (United States)

    Kim, Yoonkap; Kim, Han-Jung; Kim, Jae-Hyun; Choi, Dae-Geun; Choi, Jun-Hyuk; Jung, Joo-Yun; Jeon, Sohee; Lee, Eung-Sug; Jeong, Jun-Ho; Lee, Jihye

    2015-08-26

    The vertical integration of 1D nanostructures onto the 2D substrates has the potential to offer significant performance gains to flexible electronic devices due to high integration density, large surface area, and improved light absorption and trapping. A simple, rapid, and low temperature transfer bonding method has been developed for this purpose. Ultrasonic vibration is used to achieve a low temperature bonding within a few seconds, resulting in a polymer-matrix-free, electrically conducting vertical assembly of silicon nanowires (SiNWs) with a graphene/PET substrate. The microscopic structure, and mechanical and electrical characteristics of the interface between the transferred SiNW array and graphene layer are subsequently investigated, revealing that this creates a mechanically robust and electrically Ohmic contact. This newly developed ultrasonic transfer bonding technique is also found to be readily adaptable for diverse substrates of both metal and polymer. It is therefore considered as a valuable technique for integrating 1D vertical nanostructures onto the 2D flexible substrates for flexible photovoltaics, energy storage, and water splitting systems.

  16. Integrated label-free silicon nanowire sensor arrays for (bio)chemical analysis.

    Science.gov (United States)

    De, Arpita; van Nieuwkasteele, Jan; Carlen, Edwin T; van den Berg, Albert

    2013-06-07

    We present a label-free (bio)chemical analysis platform that uses all-electrical silicon nanowire sensor arrays integrated with a small volume microfluidic flow-cell for real-time (bio)chemical analysis and detection. The integrated sensing platform contains an automated multi-sample injection system that eliminates erroneous sensor responses from sample switching due to flow rate fluctuations and provides precise sample volumes down to 10 nl. Biochemical sensing is demonstrated with real-time 15-mer DNA-PNA (peptide nucleic acid) duplex hybridization measurements from different sample concentrations in a low ionic strength, and the equilibrium dissociation constant KD ≈ 140 nM has been extracted from the experimental data using the first order Langmuir binding model. Chemical sensing is demonstrated with pH measurements from different injected samples in flow that have sensitivities consistent with the gate-oxide materials. A differential sensor measurement configuration results in a 30× reduction in sensor drift. The integrated label-free analysis platform is suitable for a wide range of small volume chemical and biochemical analyses.

  17. Disordered array of Au covered Silicon nanowires for SERS biosensing combined with electrochemical detection

    Science.gov (United States)

    Convertino, Annalisa; Mussi, Valentina; Maiolo, Luca

    2016-04-01

    We report on highly disordered array of Au coated silicon nanowires (Au/SiNWs) as surface enhanced Raman scattering (SERS) probe combined with electrochemical detection for biosensing applications. SiNWs, few microns long, were grown by plasma enhanced chemical vapor deposition on common microscope slides and covered by Au evaporated film, 150 nm thick. The capability of the resulting composite structure to act as SERS biosensor was studied via the biotin-avidin interaction: the Raman signal obtained from this structure allowed to follow each surface modification step as well as to detect efficiently avidin molecules over a broad range of concentrations from micromolar down to the nanomolar values. The metallic coverage wrapping SiNWs was exploited also to obtain a dual detection of the same bioanalyte by electrochemical impedance spectroscopy (EIS). Indeed, the SERS signal and impedance modifications induced by the biomolecule perturbations on the metalized surface of the NWs were monitored on the very same three-electrode device with the Au/SiNWs acting as both working electrode and SERS probe.

  18. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  19. Synthesis and optical properties of silicon nanowires grown by different methods

    Energy Technology Data Exchange (ETDEWEB)

    Colli, A.; Hofmann, S.; Fasoli, A.; Ferrari, A.C.; Robertson, J. [University of Cambridge, Department of Engineering, Cambridge (United Kingdom); Ducati, C.; Dunin-Borkowski, R.E. [University of Cambridge, Department of Materials Science and Metallurgy, Cambridge (United Kingdom)

    2006-11-15

    We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapour-phase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 C) selective nucleation of SiNWs by Au-catalysed CVD and PECVD. Bulk production of SiNWs is obtained by thermal-vapour deposition from Si/SiO powders in a high-temperature furnace. In this case, SiNWs grow either by condensing on Au catalyst films, or by self-condensation of the vapour in a lower-temperature region of the furnace. Finally, we also achieve controlled growth by thermolysis of nanopatterned, multi-layered Si/Au thin-film precursors. The as-produced wires are compared in terms of yield, structural quality, and optical properties. Raman and photoluminescence spectra of SiNWs are discussed. (orig.)

  20. A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111 and Their Optical Absorption

    Directory of Open Access Journals (Sweden)

    Tzuen-Wei Ho

    2012-01-01

    Full Text Available In this study we grew silicon nanowires (SiNWs on Si (111 substrate by gold-catalyzed vapor liquid solid (VLS process using tetrachlorosilane (SiCl4 in a hot-wall chemical vapor deposition reactor. SiNWs with 150–200 nm diameters were found to grow along the orientations of all 〈111〉 family, including the vertical and the inclined, on Si (111. The effects of various process conditions, including SiCl4 concentration, SiCl4 feeding temperature, H2 annealing, and ramp cooling, on the crystal quality and growth orientation of SiNWs, were studied to optimize the growth conditions. Furthermore, a novel method was developed to reliably grow vertically aligned SiNWs on Si (111 utilizing the principle of liquid phase epitaxy (LPE. A ramp-cooling process was employed to slowly precipitate the epitaxial Si seeds on Si (111 after H2 annealing at 650°C. Then, after heating in SiCl4/H2 up to 850°C to grow SiNWs, almost 100% vertically aligned SiNWs could be achieved reproducibly. The high degree of vertical alignment of SiNWs is effective in reducing surface reflection of solar light with the reflectance decreasing with increasing the SiNWs length. The vertically aligned SiNWs have good potentials for solar cells and nano devices.

  1. Serotype-specific identification of Dengue virus by silicon nanowire array biosensor.

    Science.gov (United States)

    Huang, Min Joon; Xie, Hui; Wan, Qiangqiang; Zhang, Li; Ning, Yong; Zhang, Guo-Jun

    2013-06-01

    In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different areas of the SiNW array surface, and the covalently immobilized PNA probes were then interacted with different Dengue serotypes target to establish the specificity of detection. Detection scheme is based on the changes in resistances due to accumulation of negative charges contributed by the hybridized DNA target. The results show that resistance changes only occur in regions where the Dengue target hybridizes with its complementary probe. What is more, a mixture of two different Dengue serotypes obtained from a one-step duplex RT-PCR was applied to the multiplex SiNW surface to validate SiNW capability to identify multiple Dengue serotypes on a single sensing platform. Through this study, we have established the multiplex SiNW biosensor as a promising device to detect multiple Dengue infections with high specificity.

  2. Decoration of silicon nanowires with silver nanoparticles for ultrasensitive surface enhanced Raman scattering.

    Science.gov (United States)

    D'Andrea, Cristiano; Faro, Maria J Lo; Bertino, Giulia; Ossi, Paolo M; Neri, Fortunato; Trusso, Sebastiano; Musumeci, Paolo; Galli, Matteo; Cioffi, Nicola; Irrera, Alessia; Priolo, Francesco; Fazio, Barbara

    2016-09-16

    Silicon nanowires (Si NWs), produced by the chemical etching technique, were decorated with silver nanoparticles (NPs) produced at room temperature by the pulsed laser deposition (PLD) technique. Silver NPs were obtained by means of nanosecond pulsed laser ablation of a target in the presence of a controlled Ar atmosphere. Two different laser pulse numbers and Si NWs having different lengths were used to change the NP number density on the Si NW surface. The resulting Ag NP morphologies were studied by scanning electron microscopy imaging. The results show that this industrially compatible technological approach allows the coverage of the Si NW walls with Ag NPs with a strong control of the NP size distribution and spatial arrangement. The obtained Ag NP decorated Si NWs are free from chemicals contamination and there is no need of post deposition high temperature processes. The optical properties of Si NW arrays were investigated by reflectance spectroscopy that showed the presence of a plasmon related absorption peak, whose position and width is dependent on the Ag NP surface morphology. Coupling the huge surface-to-volume ratio of Si NW arrays with the plasmonic properties of silver nanoparticles resulted in a 3D structure suitable for very sensitive surface enhanced Raman scattering (SERS) applications, as demonstrated by the detection of Rhodamine 6G in aqueous solution at a concentration level of 10(-8) M.

  3. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays.

    Science.gov (United States)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-06-07

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.

  4. The effect of trapped charge on silicon nanowire pseudo-MOSFETs.

    Science.gov (United States)

    Nam, Incheol; Kim, Minsuk; Najam, Syed Faraz; Lee, Eunhong; Hwang, Sungwoo; Kim, Sangsig

    2013-09-01

    The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Qot = -5.0 x 10(11) cm(-2) and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 x 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.

  5. Anisotropic Lithium Insertion Behavior in Silicon Nanowires: Binding Energy, Diffusion Barrier, and Strain Effect

    KAUST Repository

    Zhang, Qianfan

    2011-05-19

    Silicon nanowires (SiNWs) have recently been shown to be promising as high capacity lithium battery anodes. SiNWs can be grown with their long axis along several different crystallographic directions. Due to distinct atomic configuration and electronic structure of SiNWs with different axial orientations, their lithium insertion behavior could be different. This paper focuses on the characteristics of single Li defects, including binding energy, diffusion barriers, and dependence on uniaxial strain in [110], [100], [111], and [112] SiNWs. Our systematic ab initio study suggests that the Si-Li interaction is weaker when the Si-Li bond direction is aligned close to the SiNW long axis. This results in the [110] and [111] SiNWs having the highest and lowest Li binding energy, respectively, and it makes the diffusion barrier along the SiNW axis lower than other pathways. Under external strain, it was found that [110] and [001] SiNWs are the most and least sensitive, respectively. For diffusion along the axial direction, the barrier increases (decreases) under tension (compression). This feature results in a considerable difference in the magnitude of the energy barrier along different diffusion pathways. © 2011 American Chemical Society.

  6. Modification and characterization of potential bioelectronic interfaces

    OpenAIRE

    Greben, Kyrylo

    2015-01-01

    In this dissertation, planar biocompatible dielectric and metal surfaces, modified with self-assembling organic monolayers and functionalized gold nanoparticles are studied. In the field of bioelectronics, adhesion and guiding of cells (especially neurons) on a substrate is of great importance, and withal a hard challenge. Optimization and engineering of properties of a carrier (biocompatible inorganic substrates) can potentially improve the contact between cells and substrates, increase ...

  7. Joule heating in nanowires

    OpenAIRE

    Fangohr, H.; Chernyshenko, D.; Franchin, Matteo; Fischbacher, Thomas; Meier, G.

    2011-01-01

    We study the effect of Joule heating from electric currents flowing through ferromagnetic nanowires on the temperature of the nanowires and on the temperature of the substrate on which the nanowires are grown. The spatial current density distribution, the associated heat generation, and diffusion of heat is simulated within the nanowire and the substrate. We study several different nanowire and constriction geometries as well as different substrates: (thin) silicon nitride membranes, (thick) ...

  8. Bioelectronic nose: Current status and perspectives.

    Science.gov (United States)

    Wasilewski, Tomasz; Gębicki, Jacek; Kamysz, Wojciech

    2017-01-15

    A characteristic feature of human and animal organs of smell is the ability to identify hundreds of thousands of odours. It is accompanied by particular smell sensations, which are a basic source of information about odour mixture. The main structural elements of biological smell systems are the olfactory receptors. Small differences in a structure of odorous molecules (odorants) can lead to significant change of odour, which is due to the fact that each of the olfactory receptors is coded with different gene and usually corresponds to different type of odour. Discovery and characterisation of the gene family coding the olfactory receptors contributed to the elaboration and development of the electronic smell systems, the so-called bioelectronic noses. The olfactory receptors are employed as a biological element in this type of instruments. An electronic system includes a converter part, which allows measurement and processing of generated signals. A suitable data analysis system is also required to visualise the results. Application potentialities of the bioelectronic noses are focused on the fields of economy and science where highly selective and sensitive analysis of odorous substances is required. The paper presents a review of the latest achievements and critical evaluation of the state of art in the field of bioelectronic noses.

  9. Directed assembly of gold nanowires on silicon via reorganization and simultaneous fusion of randomly distributed gold nanoparticles.

    Science.gov (United States)

    Reinhardt, Hendrik M; Bücker, Kerstin; Hampp, Norbert A

    2015-05-04

    Laser-induced reorganization and simultaneous fusion of nanoparticles is introduced as a versatile concept for pattern formation on surfaces. The process takes advantage of a phenomenon called laser-induced periodic surface structures (LIPSS) which originates from periodically alternating photonic fringe patterns in the near-field of solids. Associated photonic fringe patterns are shown to reorganize randomly distributed gold nanoparticles on a silicon wafer into periodic gold nanostructures. Concomitant melting due to optical heating facilitates the formation of continuous structures such as periodic gold nanowire arrays. Generated patterns can be converted into secondary structures using directed assembly or self-organization. This includes for example the rotation of gold nanowire arrays by arbitrary angles or their fragmentation into arrays of aligned gold nanoparticles.

  10. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

    Science.gov (United States)

    Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmen; Ezzaouia, Hatem

    2016-03-01

    In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by the widely used Silver catalyzed etching method. SEM and TEM images show that AVE treatment induces porous structure in the whole Si wafer and the SiNW sidewall. Comparatively to pSi, pSiNWs exhibit a low reflectivity in the whole spectral range which decreases with etching duration. However, the reflectivity of pSi changes with porous layer thickness. Both pSi and pSiNWs exhibit a significant PL peak situated at 2 eV. PL peaks are attributed to the quantum confinement effect in the silicon nanocrystallites (SiNCs). We discussed the significant enhancement in the peak intensities and a shift toward lower energy displayed in Raman spectra for both pSi and pSiNWs. We reported a correlative study of the AVE treatment effect on the minority carrier life time of flat silicon and SiNW arrays with the passivation effect of chemical induced silicon oxides highlighted by FTIR spectra.

  11. High-performance silicon nanowire array photoelectrochemical solar cells through surface passivation and modification.

    Science.gov (United States)

    Wang, Xin; Peng, Kui-Qing; Pan, Xiao-Jun; Chen, Xue; Yang, Yang; Li, Li; Meng, Xiang-Min; Zhang, Wen-Jun; Lee, Shuit-Tong

    2011-10-10

    Nanowire solar cells: Pt nanoparticle (PtNP) decorated C/Si core/shell nanowire photoelectrochemical solar cells show high conversion efficiency of 10.86 % and excellent stability in aggressive electrolytes under 1-sun AM 1.5 G illumination. Superior device performance is achieved by improved surface passivation of the nanowires by carbon coating and enhanced interfacial charge transfer by PtNPs.

  12. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

    Science.gov (United States)

    Matteini, Federico; Dubrovskii, Vladimir G.; Rüffer, Daniel; Tütüncüoğlu, Gözde; Fontana, Yannik; Morral, Anna Fontcuberta I.

    2015-03-01

    Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and density of self-catalyzed GaAs nanowires on Si(111) substrates by growth conditions using the self-assembly of Ga droplets. We introduce a new paradigm of the characteristic nucleation time controlled by group III flux and temperature that determine diameter and length distributions of GaAs nanowires. This insight into the growth mechanism is then used to grow nanowire forests with a completely tailored diameter-density distribution. We also show how the reflectivity of nanowire arrays can be minimized in this way. In general, this work opens new possibilities for the cost-effective and controlled fabrication of the ensembles of self-catalyzed III-V nanowires for different applications, in particular in next-generation photovoltaic devices.

  13. Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

    2014-04-01

    Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

  14. Continuous-flow mass production of silicon nanowires via substrate-enhanced metal-catalyzed electroless etching of silicon with dissolved oxygen as an oxidant.

    Science.gov (United States)

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-13

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods.

  15. Neuron-like differentiation of mesenchymal stem cells on silicon nanowires

    Science.gov (United States)

    Kim, Hyunju; Kim, Ilsoo; Choi, Heon-Jin; Kim, So Yeon; Yang, Eun Gyeong

    2015-10-01

    The behavior of mammalian cells on vertical nanowire (NW) arrays, including cell spreading and the dynamic distribution of focal adhesions and cytoskeletal proteins, has been intensively studied to extend the implications for cellular manipulations in vitro. Prompted by the result that cells on silicon (Si) NWs showed morphological changes and reduced migration rates, we have explored the transition of mesenchymal stem cells into a neuronal lineage by using SiNWs with varying lengths. When human mesenchymal stem cells (hMSCs) were cultured on the longest SiNWs for 3 days, most of the cells exhibited elongated shapes with neurite-like extensions and dot-like focal adhesions that were prominently observed along with actin filaments. Under these circumstances, the cell motility analyzed by live cell imaging was found to decrease due to the presence of SiNWs. In addition, the slowed growth rate, as well as the reduced population of S phase cells, suggested that the cell cycle was likely arrested in response to the differentiation process. Furthermore, we measured the mRNA levels of several lineage-specific markers to confirm that the SiNWs actually induced neuron-like differentiation of the hMSCs while hampering their osteogenic differentiation. Taken together, our results implied that SiNWs were capable of inducing active reorganization of cellular behaviors, collectively guiding the fate of hMSCs into the neural lineage even in the absence of any inducing reagent.The behavior of mammalian cells on vertical nanowire (NW) arrays, including cell spreading and the dynamic distribution of focal adhesions and cytoskeletal proteins, has been intensively studied to extend the implications for cellular manipulations in vitro. Prompted by the result that cells on silicon (Si) NWs showed morphological changes and reduced migration rates, we have explored the transition of mesenchymal stem cells into a neuronal lineage by using SiNWs with varying lengths. When human mesenchymal

  16. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

  17. High aspect ratio silicon nanowires control fibroblast adhesion and cytoskeleton organization.

    Science.gov (United States)

    Andolfi, Laura; Murello, Anna; Cassese, Damiano; Ban, Jelena; Dal Zilio, Simone; Lazzarino, Marco

    2017-04-18

    Cell-cell and cell-matrix interactions are essential to the survival and proliferation of most cells, and are responsible for triggering a wide range of biochemical pathways. More recently, the biomechanical role of those interactions was highlighted, showing, for instance, that adhesion forces are essential for cytoskeleton organization. Silicon nanowires (Si NWs) with their small size, high aspect ratio and anisotropic mechanical response represent a useful model to investigate the forces involved in the adhesion processes and their role in cellular development. In this work we explored and quantified, by single cell force spectroscopy (SCFS), the interaction of mouse embryonic fibroblasts with a flexible forest of Si NWs. We observed that the cell adhesion forces are comparable to those found on collagen and bare glass coverslip, analogously the membrane tether extraction forces are similar to that on collagen but stronger than that on bare flat glass. Cell survival did not depend significantly on the substrate, although a reduced proliferation after 36 h was observed. On the contrary both cell morphology and cytoskeleton organization revealed striking differences. The cell morphology on Si-NW was characterized by a large number of filopodia and a significant decrease of the cell mobility. The cytoskeleton organization was characterized by the absence of actin fibers, which were instead dominant on collagen and flat glass support. Such findings suggest that the mechanical properties of disordered Si NWs, and in particular their strong asymmetry, play a major role in the adhesion, morphology and cytoskeleton organization processes. Indeed, while adhesion measurements by SCFS provide out-of-plane forces values consistent with those measured on conventional substrates, weaker in-plane forces hinder proper cytoskeleton organization and migration processes.

  18. Toxicity of silicon carbide nanowires to sediment-dwelling invertebrates in water or sediment exposures

    Science.gov (United States)

    Mwangi, Joseph N.; Wang, Ning; Ritts, Andrew; Kunz, James L.; Ingersoll, Christopher G.; Li, Hao; Deng, Baolin

    2011-01-01

    Silicon carbide nanowires (SiCNW) are insoluble in water. When released into an aquatic environment, SiCNW would likely accumulate in sediment. The objective of this study was to assess the toxicity of SiCNW to four freshwater sediment-dwelling organisms: amphipods (Hyalella azteca), midges (Chironomus dilutus), oligochaetes (Lumbriculus variegatus), and mussels (Lampsilis siliquoidea). Amphipods were exposed to either sonicated or nonsonicated SiCNW in water (1.0 g/L) for 48 h. Midges, mussels, and oligochaetes were exposed only to sonicated SiCNW in water for 96 h. In addition, amphipods were exposed to sonicated SiCNW in whole sediment for 10 d (44% SiCNW on dry wt basis). Mean 48-h survival of amphipods exposed to nonsonicated SiCNW in water was not significantly different from the control, whereas mean survival of amphipods exposed to sonicated SiCNW in two 48-h exposures (0 or 15% survival) was significantly different from the control (90 or 98% survival). In contrast, no effect of sonicated SiCNW was observed on survival of midges, mussels, or oligochaetes. Survival of amphipods was not significantly reduced in 10-d exposures to sonicated SiCNW either mixed in the sediment or layered on the sediment surface. However, significant reduction in amphipod biomass was observed with the SiCNW either mixed in sediment or layered on the sediment surface, and the reduction was more pronounced for SiCNW layered on the sediment. These results indicated that, under the experimental conditions, nonsonicated SiCNW in water were not acutely toxic to amphipods, sonicated SiCNW in water were acutely toxic to the amphipods, but not to other organisms tested, and sonicated SiCNW in sediment affected the growth but not the survival of amphipods.

  19. Influence of the polymer matrix on the efficiency of hybrid solar cells based on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ben Dkhil, S., E-mail: sadok.bendekhil@gmail.com [Laboratoire Physique des Materiaux: Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Ingenierie des Materiaux Polymeres: IMP, UMR CNRS 5223, Universite Claude Bernard Lyon 1, 15 boulevard Latarjet, 69622 Villeurbanne (France); Bourguiga, R. [Laboratoire Physique des Materiaux: Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Davenas, J. [Ingenierie des Materiaux Polymeres: IMP, UMR CNRS 5223, Universite Claude Bernard Lyon 1, 15 boulevard Latarjet, 69622 Villeurbanne (France); Cornu, D. [Institut Europeen des Membranes, UMR CNRS 5635, Ecole Nationale superieure de Chimie, Universite de Montpellier, 1919 route de Mende, 34000 Montpellier (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Hybrid solar cells based on silicon nanowires have been fabricated. Black-Right-Pointing-Pointer The relation between the morphology of the composite thin films and the charge transfer between the polymer matrices and SiNWs has been examined. Black-Right-Pointing-Pointer We have investigated the effect of the polymer matrix on the photovoltaic characteristics. - Abstract: Poly (N-vinylcarbazole) (PVK):SiNWs and poly (2-methoxy, 5-(2-ethyl-hexyloxy)-p-phenyl vinylene) (MEH-PPV):SiNWs bulk-heterojunctions (BHJ) have been elaborated from blends of SiNWs and the polymer in solution from a common solvent. Optical properties of these nanocomposites have been investigated by UV-vis absorption and photoluminescence (PL) spectral measurements. We have studied the charge transfer between SiNWs and the two polymers using the photoluminescence quenching of PVK and MEH-PPV which is a convenient signature of the reduced radiative recombination of the generated charge pairs upon exciton dissociation. We found that PVK and SiNWs constitutes the better donor-acceptor system. In order to understand the difference between PVK:SiNWs or MEH-PPV:SiNWs behaviours, photoluminescence responses were correlated with the topography (SEM) of the thin films. The photovoltaic effect of ITO/PEDOT:PSS/SiNWs:PVK/Al and ITO/PEDOT:PSS/SiNWs:MEH-PPV/Al structures was studied by current-voltage (I-V) measurements in dark and under illumination and interpreted on the basis of the charge transfer differences resulting from the morphologies.

  20. Surface potential variations on a silicon nanowire transistor in biomolecular modification and detection

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Chia-Chang; Chiang, Pei-Ling; Lin, Tsung-Wu; Chen, Yit-Tsong [Institute of Atomic and Molecular Sciences, Academia Sinica, PO Box 23-166, Taipei 106, Taiwan (China); Sun, Chih-Jung; Tsai, Ming-Hsueh [Department of Chemistry, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Chang, Yun-Chorng, E-mail: ychang6@mail.ncku.edu.tw, E-mail: ytcchem@ntu.edu.tw [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan 701, Taiwan (China)

    2011-04-01

    Using a silicon nanowire field-effect transistor (SiNW-FET) for biomolecule detections, we selected 3-(mercaptopropyl)trimethoxysilane (MPTMS), N-[6-(biotinamido)hexyl]-3{sup '}-(2{sup '}-pyridyldithio) propionamide (biotin-HPDP), and avidin, respectively, as the designated linker, receptor, and target molecules as a study model, where the biotin molecules were modified on the SiNW-FET to act as a receptor for avidin. We applied high-resolution scanning Kelvin probe force microscopy (KPFM) to detect the modified/bound biomolecules by measuring the induced change of the surface potential ({Delta}{Phi}{sup s}) on the SiNW-FET under ambient conditions. After biotin-immobilization and avidin-binding, the {Delta}{Phi}{sup s} on the SiNW-FET characterized by KPFM was demonstrated to correlate to the conductance change inside the SiNW-FET acquired in aqueous solution. The {Delta}{Phi}{sup s} values on the SiNW-FET caused by the same biotin-immobilization and avidin-binding were also measured from drain current versus gate voltage curves (I{sub d}-V{sub g}) in both aqueous condition and dried state. For comparison, we also study the {Delta}{Phi}{sup s} values on a Si wafer caused by the same biotin-immobilization and avidin-binding through KPFM and {zeta} potential measurements. This study has demonstrated that the surface potential measurement on a SiNW-FET by KPFM can be applied as a diagnostic tool that complements the electrical detection with a SiNW-FET sensor. Although the KPFM experiments were carried out under ambient conditions, the measured surface properties of a SiNW-FET are qualitatively valid compared with those obtained by other biosensory techniques performed in liquid environment.

  1. Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

    Science.gov (United States)

    Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

    2016-06-28

    Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

  2. Dopant Diffusion and Activation in Silicon Nanowires Fabricated by ex Situ Doping: A Correlative Study via Atom-Probe Tomography and Scanning Tunneling Spectroscopy.

    Science.gov (United States)

    Sun, Zhiyuan; Hazut, Ori; Huang, Bo-Chao; Chiu, Ya-Ping; Chang, Chia-Seng; Yerushalmi, Roie; Lauhon, Lincoln J; Seidman, David N

    2016-07-13

    Dopants play a critical role in modulating the electric properties of semiconducting materials, ranging from bulk to nanoscale semiconductors, nanowires, and quantum dots. The application of traditional doping methods developed for bulk materials involves additional considerations for nanoscale semiconductors because of the influence of surfaces and stochastic fluctuations, which may become significant at the nanometer-scale level. Monolayer doping is an ex situ doping method that permits the post growth doping of nanowires. Herein, using atom-probe tomography (APT) with subnanometer spatial resolution and atomic-ppm detection limit, we study the distributions of boron and phosphorus in ex situ doped silicon nanowires with accurate control. A highly phosphorus doped outer region and a uniformly boron doped interior are observed, which are not predicted by criteria based on bulk silicon. These phenomena are explained by fast interfacial diffusion of phosphorus and enhanced bulk diffusion of boron, respectively. The APT results are compared with scanning tunneling spectroscopy data, which yields information concerning the electrically active dopants. Overall, comparing the information obtained by the two methods permits us to evaluate the diffusivities of each different dopant type at the nanowire oxide, interface, and core regions. The combined data sets permit us to evaluate the electrical activation and compensation of the dopants in different regions of the nanowires and understand the details that lead to the sharp p-i-n junctions formed across the nanowire for the ex situ doping process.

  3. Enhancement of Capture Sensitivity for Circulating Tumor Cells in a Breast Cancer Patient's Blood by Silicon Nanowire Platform.

    Science.gov (United States)

    Kim, Dong-Joo; Choi, Mun-Ki; Jeong, Jin-Tak; Lim, Jung-Taek; Lee, Han-Byoel; Han, Wonshik; Lee, Sang-Kwon

    2016-04-01

    The separation of circulating tumor cells (CTCs) from the blood of cancer patients with high sensitivity is an essential technique for selecting chemotherapeutic agents at a patient-by-patient level. Recently, various research groups have reported a nanostructure-based platform for rare cell capture due to its high surface area and 3D nanotopographic features. However, evaluation of capture sensitivity based on chemical modification of the nanostructure surface has not yet been performed. Here, we evaluated the capture sensitivity for CTCs from the blood of three patients diagnosed with stage IV metastatic breast cancer by using the following three platforms: streptavidin-conjugated silicon nanowire (STR-SiNW), poly-l-lysine-coated silicon nanowire (PLL-SiNW), and poly-l-lysine-coated glass (PLL-glass). The number of evaluated CTCs on STR-SiNW, PLL-SiNW, and PLL-glass were 16.2 ± 5.5 cells, 7.3 ± 2.9 cells, and 4.7 ± 1.5 cells, respectively, per 0.5 ml. Therefore, we suggest that the STR-SiNW platform is highly adaptable for the quantitative evaluation of CTCs from the blood of cancer patients in the clinical setting.

  4. A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

    Directory of Open Access Journals (Sweden)

    Kögler Reinhard

    2009-01-01

    Full Text Available Abstract We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm−3, while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm−3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.

  5. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell.

    Science.gov (United States)

    Petterson, Maureen K; Lemaitre, Maxime G; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V; Kravchenko, Ivan I; Rinzler, Andrew G

    2015-09-30

    Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

  6. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.

    Science.gov (United States)

    Guo, Wei; Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

    2010-09-08

    Catalyst-free growth of (In)GaN nanowires on (001) silicon substrate by plasma-assisted molecular beam epitaxy is demonstrated. The nanowires with diameter ranging from 10 to 50 nm have a density of 1-2 x 10(11) cm(-2). P- and n-type doping of the nanowires is achieved with Mg and Si dopant species, respectively. Structural characterization by high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The peak emission wavelength of InGaN nanowires can be tuned from ultraviolet to red by varying the In composition in the alloy and "white" emission is obtained in nanowires where the In composition is varied continuously during growth. The internal quantum efficiency varies from 20-35%. Radiative and nonradiative lifetimes of 5.4 and 1.4 ns, respectively, are obtained from time-resolved photoluminescence measurements at room temperature for InGaN nanowires emitting at lambda = 490 nm. Green- and white-emitting planar LEDs have been fabricated and characterized. The electroluminescence from these devices exhibits negligible quantum confined Stark effect or band-tail filling effect.

  7. The effect of surface roughness on lattice thermal conductivity of silicon nanowires

    Science.gov (United States)

    Wang, Zan; Ni, Zhonghua; Zhao, Ruijie; Chen, Minhua; Bi, Kedong; Chen, Yunfei

    2011-07-01

    A theoretic model is presented to take into account the roughness effects on phonon transport in Si nanowires (NWs). Based on the roughness model, an indirect Monte Carlo (MC) simulation is carried out to predict the lattice thermal conductivities of the NWs with different surface qualities. Through fitting the experimental data with the MC predictions, the scattering strength on phonons from the boundary, umklapp phonon-phonon processes and impurities can be estimated. It is found that the scattering on phonons by the roughness cell boundaries in a rough nanowire can reduce the phonon mean free path to be smaller than the nanowire diameter, the Casimir limit of the phonon mean free path in a flat nanowire for phonons engaged in completely diffused boundary scattering processes.

  8. Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst

    Science.gov (United States)

    Carole, Davy; Brioude, Arnaud; Pillonnet, Anne; Lorenzzi, Jean; Kim-Hak, Olivier; Cauwet, François; Ferro, Gabriel

    2011-04-01

    Silane was successfully used to grow SiO x nanowires by vapor-liquid-solid at low temperature (<600 °C) using in-situ reduced tin oxide catalyst. The temperature of catalyst reduction was found to have a significant impact on the morphology, which was mainly composed of nanowires cocoons and bamboo-like microtubes. Experimental results suggest that the catalyst drop size is probably at the origin of the morphology selection. Growth mechanisms are proposed to explain these results. For long growth time, partial etching of the nanowires was observed due to SiO formation. Growing at very low temperature (<400 °C) was found to significantly reduce the growth rate while improving the shape and size control. PL measurements evidenced defects in SiO x nanowires coming from oxygen deficiency.

  9. Silicon nanowires made via macropore etching for superior Li ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Ossei-Wusu, Emmanuel; Cojocaru, Ala; Hartz, Hauke; Carstensen, Juergen; Foell, Helmut [Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel (Germany)

    2011-06-15

    The future of electro mobility depends critically on substantially improved Li ion batteries. Si as anode material has a more than tenfold higher capacity as compared to the standard graphite anode, but needs to be nanostructured to avoid fracture. It is shown that macropore etching combined with suitable follow-up processes allows to produce nanowire arrays with optimized geometries. First tests of these anodes showed very promising results with respect to prime battery parameters like capacity and capacity losses during cycling. In particular, a first test battery showed superior performance for more than 60 cycles in comparison to an otherwise identical battery with a graphite anode. Critical processes like galvanic Cu deposition at the nanowire bottom can be avoided by using an optimized pore etching process that produces complex pore diameter profiles as a function of depth, allowing easy separation of the nanowire layer from the Si substrate and processing the nanowire surface area. In total, the production of Si nanowire anodes using this improved process should allow mass production at competitive costs. Si nanowire array for use as a high-capacity anode in a Li ion battery. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Nanowire Field-Effect Transistors: Sensing Simplicity?

    OpenAIRE

    Mescher, M

    2014-01-01

    Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied because of their promising application as selective sensors for biological and chemical species. Their large surface-to-volume ratio promises an increased sensitivity compared to conventional, plan...

  11. Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

    Science.gov (United States)

    AL-Zoubi, Omar H.

    Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

  12. pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces

    Science.gov (United States)

    Cloarec, Jean-Pierre; Chevalier, Céline; Genest, Jonathan; Beauvais, Jacques; Chamas, Hassan; Chevolot, Yann; Baron, Thierry; Souifi, Abdelkader

    2016-07-01

    pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at pH 2.8; and they were mainly anchored on SiO2 at pH 2. A theoretical model based on DLVO theory and surface protonation/deprotonation equilibria was used to study how, in adequate pH conditions, Si nanowires could be anchored onto specific regions of a patterned Si3N4/SiO2 surface. Instead of using capillary forces, or hydrophilic/hydrophobic contrast between the two types of materials, the specificity of immobilization could rely on surface electric charge contrasts between Si3N4 and SiO2. This simple and generic method could be used for addressing a large diversity of nano-objects onto patterned substrates.

  13. Chemical Sensing with Nanowires

    Science.gov (United States)

    Penner, Reginald M.

    2012-07-01

    Transformational advances in the performance of nanowire-based chemical sensors and biosensors have been achieved over the past two to three years. These advances have arisen from a better understanding of the mechanisms of transduction operating in these devices, innovations in nanowire fabrication, and improved methods for incorporating receptors into or onto nanowires. Nanowire-based biosensors have detected DNA in undiluted physiological saline. For silicon nanowire nucleic acid sensors, higher sensitivities have been obtained by eliminating the passivating oxide layer on the nanowire surface and by substituting uncharged protein nucleic acids for DNA as the capture strands. Biosensors for peptide and protein cancer markers, based on both semiconductor nanowires and nanowires of conductive polymers, have detected these targets at physiologically relevant concentrations in both blood plasma and whole blood. Nanowire chemical sensors have also detected several gases at the parts-per-million level. This review discusses these and other recent advances, concentrating on work published in the past three years.

  14. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  15. High-k materials in the electrolyte/insulator/silicon configuration. Characterization and application in bio-electronics; Hoch-k-Materialien in der Elektrolyt/Isolator/Silizium-Konfiguration. Charakterisierung und Anwendung in der Bioelektronik

    Energy Technology Data Exchange (ETDEWEB)

    Wallrapp, F.

    2006-12-19

    In order to elicit action potentials in nerve cells adhered on electrodes, a certain current is required across the electrode. Electrochemical reactions may cause damage to cells and electrodes. This is evaded by using silicon electrodes which are insulated by a dielectric. In doing so, only capacitive current is flowing, and electrochemical are avoided. The aim of this work was to fabricate novel stimulation chips exhibiting an enhanced capacitance which render new biological applications possible. These chips were to be characterized and used for the stimulation of cells. The formerly used dielectric SiO{sub 2} was replaced by HfO{sub 2} and TiO{sub 2}, with both of them featuring a higher dielectric constant. They were deposited on the silicon substrate by ALD (atomic layer deposition). The chips were characterized in the electrolyte/insulator/semiconductor (EIS) configuration. Owing to the low leakage current of the EIS configuration, the characterization of the high-k materials was possible in more detail as compared to using a metallic top contact (MIS configuration). The voltage-dependent capacitances of the HfO{sub 2} films could be interpreted by means of a common metal/SiO{sub 2}/silicon system. In contrast, the TiO{sub 2} films exhibited interesting properties which could only be rationalized with the help of numerical calculations assuming free electrons in the TiO{sub 2}. The low-lying conduction band of TiO{sub 2} caused accumulation of electrons within the TiO{sub 2} for certain voltages, which led to an enhanced capacitance. The effects of high voltages, frequency, film thickness and interlayer composition were examined and brought into compliance with the model. The novel TiO{sub 2} stimulation devices featured a five-fold capacitance increase as compared to former SiO{sub 2} chips. Using them, two fundamental stimulation mechanisms were induced in HEK293 cells expressing the recombinant potassium channel Kv1.3: Opening of ion channels and

  16. Formation of aligned silicon-nanowire on silicon in aqueous HF/(AgNO{sub 3} + Na{sub 2}S{sub 2}O{sub 8}) solution

    Energy Technology Data Exchange (ETDEWEB)

    Douani, R. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Hadjersi, T. [Unite de Developpement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria)], E-mail: hadjersi@yahoo.com; Boukherroub, R. [Institut de Recherche Interdisciplinaire (IRI, FRE 2963) and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare - B.P. 60069, 59652 Villeneuve d' Ascq (France); Adour, L. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Manseri, A. [Unite de Developpement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria)

    2008-09-15

    Highly oriented silicon nanowire (SiNW) layer was fabricated by etching Si substrate in HF/(AgNO{sub 3} + Na{sub 2}S{sub 2}O{sub 8}) solution at 50 deg. C. The morphology and the photoluminescence (PL) of the etched layer as a function of Na{sub 2}S{sub 2}O{sub 8} concentration were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX). It was demonstrated that the morphology of the etched layers depends on the Na{sub 2}S{sub 2}O{sub 8} concentration. Room-temperature photoluminescence (PL) from etched layer was observed. It was found that the utilisation of Na{sub 2}S{sub 2}O{sub 8} decreases PL peak intensity. Finally, a discussion on the formation process of the silicon nanowires is presented.

  17. Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Y; Weng, X J; Kendrick, C E; Eichfeld, S M; Redwing, J M [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA 16802 (United States); Wang, X; Yu, Y A; Yoon, H P; Mayer, T S [Department of Electrical Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA 16802 (United States); Habib, Y M, E-mail: jmr31@psu.edu, E-mail: tsm2@psu.edu [Illuminex Corp., Lancaster, PA 17601 (United States)

    2011-11-04

    Single nanowire radial junction solar cell devices were fabricated using Si nanowires synthesized by Al-catalyzed vapor-liquid-solid growth of the p{sup +} core (Al auto-doping) and thin film deposition of the n{sup +}-shell at temperatures below 650 deg. C. Short circuit current densities of {approx} 11.7 mA cm{sup -2} were measured under 1-sun AM1.5G illumination, showing enhanced optical absorption. The power conversion efficiencies were limited to < 1% by the low open circuit voltage and fill factor of the devices, which was attributed to junction shunt leakage promoted by the high p{sup +}/n{sup +} doping. This demonstration of a radial junction device represents an important advance in the use of Al-catalyzed Si nanowire growth for low cost photovoltaics.

  18. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Zhongwei [National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); School of Science, Nantong University, Nantong 226000 (China); Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji [National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Misra, Soumyadeep; Roca i Cabarrocas, Pere [LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Yu, Linwei, E-mail: yulinwei@nju.edu.cn, E-mail: linwei.yu@polytechnique.edu [National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France)

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  19. Effect of added silicon carbide nanowires and carbon nanotubes on mechanical properties of 0-3 natural rubber composites

    Science.gov (United States)

    Janyakunmongkol, Khantichai; Nhuapeng, Wim; Thamjaree, Wandee

    2016-01-01

    In this work, the mechanical properties of 0-3 nanocomposite materials containing silicon carbide nanowires (SiCNWs), carbon nanotubes (CNTs), and natural rubber were studied. The SiCNWs and CNTs were used as reinforcement fiber whereas natural rubber was used as the matrix phase. The chemical vapor depositions (CVD) was used for synthesizing the nanowire and nanotube phases. The volume fraction of reinforcement was varied from 0 to 10%. The nanophases were mixed in the natural rubber matrix and molded by the hand lay-up technique. The mechanical properties of the samples were examined and compared with those of neat natural rubber. From the results, it was found that the hardness and density of the samples increased with the quantities of nanophases. The nanocomposites with a volume fraction of 10% exhibited maximum hardness (50.5 SHORE A). The maximum tensile strength and extent of elongation at break of the samples were obtained from the 4% volume fraction sample, which were 16.13 MPa and 1,540%, respectively.

  20. Translating silicon nanowire BioFET sensor-technology to embedded point-of-care medical diagnostics

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Zulfiqar, Azeem; Patou, François;

    2013-01-01

    Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need......, should be addressed in an automated way. Here, we are presenting the concept of a polysilicon nanoribbon sensor array integrated with multiplexed microfluidic functionalization, automated calibration and sample handling for flexible diagnostics from finger prick blood samples. Functionalization...... of the sensor surface is performed in a controlled microfluidic environment and can be monitored in real-time to ensure reproducible results. In a simple temporary PDMS device, multiple parallel pathways enable straight-forward selective functionalization for different biomarkers. Common diagnostic essays...

  1. Low-temperature grown indium oxide nanowire-based antireflection coatings for multi-crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu-Cian; Chen, Chih-Yao; Chen, I Chen [Institute of Materials Science and Engineering, National Central University, Taoyuan (China); Kuo, Cheng-Wen; Kuan, Ta-Ming; Yu, Cheng-Yeh [TSEC Corporation, Hsinchu (China)

    2016-08-15

    Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O{sub 2}-Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm{sup -2}) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Off axis holography of doped and intrinsic silicon nanowires: Interpretation and influence of fields in the vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Hertog, M I den; Rouviere, J L; Gentile, P; Oehler, F [INAC/SP2M, 17 rue des Martyrs, 38052 Grenoble Cedex 9 (France); Schmid, H; Bjoerk, M T; Riel, H; Karg, S; Riess, W [IBM Research GmbH, Saeumerstrasse 4, 8803 Rueschlikon (Switzerland); Cooper, D; Dhalluin, F; Ferret, P; Rivallin, P [LETI, 17 rue des Martyrs, 38052 Grenoble Cedex 9 (France); Baron, T, E-mail: martien.den-hertog@cea.f [LTM, CNRS UMR-5129, 17 rue des Martyrs, 38052 Grenoble Cedex 9 (France)

    2010-02-01

    Intrinsic and axially modulated doped silicon nanowires (NWs) were studied by off-axis electron holography. Phase gradients in the vacuum were observed and compared to simulations of NWs with a varying charge density at the wire-oxide interface. It seems that intrinsic NWs are positively charged with a charge density around 2x10{sup 10} e.c. (electron charges) cm{sup -2} and axially modulated doped NWs (with n-doped regions) are negatively charged with a charge density around -1x10{sup 12} e.c. cm{sup -2}. Expected fringing fields around the doped regions are incidentally observed but smaller than predicted by simulations. The effect of the surface charge on the reference wave is evaluated, and should not modify the obtained phase image.

  3. Low-temperature synthesis of novel ZnO nanowire microspheres on silicon substrates

    Institute of Scientific and Technical Information of China (English)

    LI Xinyu; GUO Jian; DING Shulong; LIN Tiejun; DONG Jingtao

    2007-01-01

    Microspheres covered with ZnO nanowires were fabricated by oxidative evaporation of pure zinc powder without catalyst at 450℃. X-ray diffraction (XRD) demonstrates that the as-obtained sample can be indexed to high crystallinity with wurtzite structure. The structural features associated with different growth stages were monitored using scanning electron microscope (SEM), which described the direct observation nucleation and growth process. Meanwhile, room temperature photoluminescence (PL) spectrum showed a UV emission at ~388 nm and a broad green emission at ~505 nm. The ZnO nanowires with the self-catalyzed growth mechanism were discussed in detail.

  4. Low-loss and low-crosstalk 8 × 8 silicon nanowire AWG routers fabricated with CMOS technology.

    Science.gov (United States)

    Wang, Jing; Sheng, Zhen; Li, Le; Pang, Albert; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Qi, Minghao; Gan, Fuwan

    2014-04-21

    Low-loss and low-crosstalk 8 × 8 arrayed waveguide grating (AWG) routers based on silicon nanowire waveguides are reported. A comparative study of the measurement results of the 3.2 nm-channel-spacing AWGs with three different designs is performed to evaluate the effect of each optimal technique, showing that a comprehensive optimization technique is more effective to improve the device performance than a single optimization. Based on the comprehensive optimal design, we further design and experimentally demonstrate a new 8-channel 0.8 nm-channel-spacing silicon AWG router for dense wavelength division multiplexing (DWDM) application with 130 nm CMOS technology. The AWG router with a channel spacing of 3.2 nm (resp. 0.8 nm) exhibits low insertion loss of 2.32 dB (resp. 2.92 dB) and low crosstalk of -20.5~-24.5 dB (resp. -16.9~-17.8 dB). In addition, sophisticated measurements are presented including all-input transmission testing and high-speed WDM system demonstrations for these routers. The functionality of the Si nanowire AWG as a router is characterized and a good cyclic rotation property is demonstrated. Moreover, we test the optical eye diagrams and bit-error-rates (BER) of the de-multiplexed signal when the multi-wavelength high-speed signals are launched into the AWG routers in a system experiment. Clear optical eye diagrams and low power penalty from the system point of view are achieved thanks to the low crosstalk of the AWG devices.

  5. Synthesis and photoluminescence property of silicon carbide nanowires thin film by HF-PECVD system

    Indian Academy of Sciences (India)

    Zhang Enlei; Wang Guosheng; Long Xiaozhu; Wang Zhumin

    2014-10-01

    A sample and scalable synthetic strategy was developed for the fabrication of nanocrystalline SiC (nc-SiC) thin film. Thin sheet of nanocrystalline diamond was deposited on Si substrate by hot filamentassisted plasma-enhanced chemical vapour deposition system (HF-PECVD). Further, the resulting carbonbased sheet was heated at 1200 °C to allow a solid state reaction between C and Si substrate to form the SiC thin films. The synthesized films mainly consist of -SiC nanowires with diameters of about 50 nm and tens of micrometers long. The nanowires axes lie along the [1 1 1] direction and possess a high density of planar defects. The -SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of 400 nm, which is significantly shifted to the blue compared with the reported PL results of SiC materials. The blue shift may be ascribed to morphology, quantum size confinement effects of the nanomaterials and abundant structure defects that existed in the nanowires.

  6. Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

    Science.gov (United States)

    Guichard, Alex Richard

    Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores

  7. A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases

    Science.gov (United States)

    Bouaziz, Lamia; Dridi, Donia; Karyaoui, Mokhtar; Angelova, Todora; Sanchez Plaza, Guillermo; Chtourou, Radhouane

    2017-03-01

    In this work, a different SiNx passivation process of silicon nanowires has been opted for the deposition of a hydrogenated silicon nitride (SiNx:H) by a low-cost plasma enhanced chemical vapor deposition (PECVD) using silane ( SiH4 and nitrogen ( N2 as reactive gases. This study is focused on the effect of the gas flow ratio on chemical composition, morphological, optical and optoelectronic properties of silicon nanowires. The existence of Si-N and Si-H bonds was proven by the Fourier transmission infrared (FTIR) spectrum. Morphological structures were shown by scanning electron microscopy (SEM), and the roughness was investigated by atomic force microscopy (AFM). A low reflectivity less than 6% in the wavelength range 250-1200nm has been shown by UV-visible spectroscopy. Furthermore, the thickness and the refractive index of the passivation layer is determined by ellipsometry measurements. As a result, an improvement in minority carrier lifetime has been obtained by reducing surface recombination of silicon nanowires.

  8. Ordered silicon nanowire arrays prepared by an improved nanospheres self-assembly in combination with Ag-assisted wet chemical etching

    Science.gov (United States)

    Jia, Guobin; Westphalen, Jasper; Drexler, Jan; Plentz, Jonathan; Dellith, Jan; Dellith, Andrea; Andrä, Gudrun; Falk, Fritz

    2016-04-01

    An improved Langmuir-Blodgett self-assembly process combined with Ag-assisted wet chemical etching for the preparation of ordered silicon nanowire arrays is presented in this paper. The new process is independent of the surface conditions (hydrophilic or hydrophobic) of the substrate, allowing for depositing a monolayer of closely packed polystyrene nanospheres onto any flat surface. A full control of the morphology of the silicon nanowire is achieved. Furthermore, it is observed that the formation of porous-Si at the tips of the nanowires is closely related to the release of Ag nanoparticles from the Ag mask during the etching, which subsequently redeposit on the surface initially free of Ag, and these Ag nanoparticles catalyze the etching of the tips and lead to the porous-Si formation. This finding will help to improve the resulting nano- and microstructures to get them free of pores, and renders it a promising technology for low-cost high throughput fabrication of specific optical devices, photonic crystals, sensors, MEMS, and NEMS by substituting the costly BOSCH process. It is shown that ordered nanowire arrays free of porous structures can be produced if all sources of Ag nanoparticles are excluded, and structures with aspect ratio more than 100 can be produced.

  9. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    Science.gov (United States)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  10. Optical waveform sampling and error-free demultiplexing of 1.28 Tbit/s serial data in a silicon nanowire

    DEFF Research Database (Denmark)

    Ji, Hua; Hu, Hao; Galili, Michael;

    2010-01-01

    We experimentally demonstrate 640 Gbit/s and 1.28 Tbit/s serial data optical waveform sampling and 640-to-10 Gbit/s and 1.28 Tbit/s-to-10 Gbit/s error-free demultiplexing using four-wave mixing in a 300nm$$450nm$$5mm silicon nanowire.......We experimentally demonstrate 640 Gbit/s and 1.28 Tbit/s serial data optical waveform sampling and 640-to-10 Gbit/s and 1.28 Tbit/s-to-10 Gbit/s error-free demultiplexing using four-wave mixing in a 300nm$$450nm$$5mm silicon nanowire....

  11. A silicon nanowire-reduced graphene oxide composite as a high-performance lithium ion battery anode material.

    Science.gov (United States)

    Ren, Jian-Guo; Wang, Chundong; Wu, Qi-Hui; Liu, Xiang; Yang, Yang; He, Lifang; Zhang, Wenjun

    2014-03-21

    Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g(-1). Due to its [111] growth direction and the large contact area with rGO, the Si NWs in the composite show substantially enhanced reaction kinetics compared with other Si NWs or Si particles.

  12. Functionalization of silicon nanowire arrays by silver nanoparticles for the laser desorption ionization mass spectrometry analysis of vegetable oils.

    Science.gov (United States)

    Picca, Rosaria Anna; Calvano, Cosima Damiana; Lo Faro, Maria Josè; Fazio, Barbara; Trusso, Sebastiano; Ossi, Paolo Maria; Neri, Fortunato; D'Andrea, Cristiano; Irrera, Alessia; Cioffi, Nicola

    2016-09-01

    In this work, novel hybrid nanostructured surfaces, consisting of dense arrays of silicon nanowires (SiNWs) functionalized by Ag nanoparticles (AgNP/SiNWs), were used for the laser desorption/ionization time-of-flight mass spectrometry (LDI-TOF MS) analysis of some typical unsaturated food components (e.g. squalene, oleic acid) to assess their MS performance. The synthesis of the novel platforms is an easy, cost-effective process based on the maskless wet-etching preparation at room temperature of SiNWs followed by their decoration with AgNPs, produced by pulsed laser deposition. No particular surface pretreatment or addition of organic matrixes/ionizers was necessary. Moreover, oil extracts (e.g. extra virgin olive oil, peanut oil) could be investigated on AgNP/SiNWs surfaces, revealing their different MS profiles. It was shown that such substrates operate at reduced laser energy, typically generating intense silver cluster ions and analyte adducts. A comparison with bare SiNWs was also performed, indicating the importance of AgNP density on NW surface. In this case, desorption/ionization on silicon was invoked as probable LDI mechanism. Finally, the influence of SiNW length and surface composition on MS results was assessed. The combination of typical properties of SiNWs (hydrophobicity, antireflectivity) with ionization ability of metal NPs can be a valid methodology for the further development of nanostructured surfaces in LDI-TOF MS applications. Copyright © 2016 John Wiley & Sons, Ltd.

  13. Surface chemistry and morphology of the solid electrolyte interphase on silicon nanowire lithium-ion battery anodes

    KAUST Repository

    Chan, Candace K.

    2009-04-01

    Silicon nanowires (SiNWs) have the potential to perform as anodes for lithium-ion batteries with a much higher energy density than graphite. However, there has been little work in understanding the surface chemistry of the solid electrolyte interphase (SEI) formed on silicon due to the reduction of the electrolyte. Given that a good, passivating SEI layer plays such a crucial role in graphite anodes, we have characterized the surface composition and morphology of the SEI formed on the SiNWs using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). We have found that the SEI is composed of reduction products similar to that found on graphite electrodes, with Li2CO3 as an important component. Combined with electrochemical impedance spectroscopy, the results were used to determine the optimal cycling parameters for good cycling. The role of the native SiO2 as well as the effect of the surface area of the SiNWs on reactivity with the electrolyte were also addressed. © 2009 Elsevier B.V. All rights reserved.

  14. Silicon nanowire-based ring-shaped tri-axial force sensor for smart integration on guidewire

    Science.gov (United States)

    Han, Beibei; Yoon, Yong-Jin; Hamidullah, Muhammad; Tsu-Hui Lin, Angel; Park, Woo-Tae

    2014-06-01

    A ring-shaped tri-axial force sensor with a 200 µm × 200 µm sensor area using silicon nanowires (SiNWs) as piezoresistive sensing elements is developed and characterized. The sensor comprises a suspended ring structure located at the center of four suspended beams that can be integrated on the distal tip of a guidewire by passing through the hollow core of the sensor. SiNWs with a length of 6 µm and a cross section of 90 nm × 90 nm are embedded at the anchor of each silicon bridge along direction as the piezoresistive sensing element. Finite element analysis has been used to determine the location of maximum stress and the simulation results are verified with the experimental measurements. Taking advantage of the high sensitivity of SiNWs, the fabricated ring-shaped sensor is capable of detecting small displacement in nanometer ranges with a sensitivity of 13.4 × 10-3 µm-1 in the z-direction. This tri-axial force sensor also shows high linearity (>99.9%) to the applied load and no obvious hysteresis is observed. The developed SiNW-based tri-axial force sensor provides new opportunities to implement sensing capability on medical instruments such as guidewires and robotic surgical grippers, where ultra-miniaturization and high sensitivity are essential.

  15. 硅纳米线阵列的制备及光伏性能%Preparation and Photovoltaic Properties of Silicon Nanowire Arrays

    Institute of Scientific and Technical Information of China (English)

    蒋玉荣; 秦瑞平; 蔡方敏; 杨海刚; 马恒; 常方高

    2013-01-01

    在常温常压下,采用无电极金属催化化学腐蚀法在P型单晶硅片(100)基底上制备定向排列的硅纳米线阵列.研究了不同浓度硝酸银对纳米线阵列形貌、反射光谱性能的影响和具有电池雏形的硅纳米线阵列的光伏性能.结果表明:硝酸银浓度在0.02 mol/L时为最佳配比;与普通绒面电池相比,硅纳米线阵列太阳能电池的光电转换性能明显优于普通绒面电池.用光谱响应分析手段分析硅纳米线电池光伏性能的影响因素,并提出解决办法.%Large area aligned identical silicon nanowires array was prepared on mono-crystalline p-Si(100) wafers via the metal-assisted electroless etching at room temperature, 1.01 × 105Pa, The morphologies and reflection spectra of the samples prepared at different nitric acid silver concentrations were analyzed. In addition, the photovoltaic performance of solar cell silicon based on the nanowires array was investigated. The results show that the optimal concentration of nitric acid silver concentration is 0.02 mol/L. The photoelectric conversion property of solar cells based on the silicon nanowire arrays were better than that of the ordinary texturing solar cell. The photovoltaic performance of silicon nanowires array was also analyzed via the spectral response of different wavelengths.

  16. Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

    Directory of Open Access Journals (Sweden)

    D.-L. Kwong

    2012-01-01

    Full Text Available This paper reviews the progress of the vertical top-down nanowire technology platform developed to explore novel device architectures and integration schemes for green electronics and clean energy applications. Under electronics domain, besides having ultimate scaling potential, the vertical wire offers (1 CMOS circuits with much smaller foot print as compared to planar transistor at the same technology node, (2 a natural platform for tunneling FETs, and (3 a route to fabricate stacked nonvolatile memory cells. Under clean energy harvesting area, vertical wires could provide (1 cost reduction in photovoltaic energy conversion through enhanced light trapping and (2 a fully CMOS compatible thermoelectric engine converting waste-heat into electricity. In addition to progress review, we discuss the challenges and future prospects with vertical nanowires platform.

  17. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

    OpenAIRE

    2016-01-01

    Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires’ suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-sca...

  18. Amperometric Bioelectronic Tongue for glucose determination

    Directory of Open Access Journals (Sweden)

    Yazan Al-Issa

    2015-03-01

    Full Text Available An amperometric Bioelectronic Tongue is reported for glucose determination that contains eight sensor electrodes constructed using different metal electrodes (Pt, Au, oxidoreductase enzymes (glucose oxidase, ascorbate oxidase, uricase, and membrane coatings (Nafion, chitosan. The response to varying concentrations of glucose, ascorbic acid, uric acid, and acetaminophen was tested for two models, concentration determination by current density measurements at individual electrodes and concentration determination by a linear regression model for the entire electrode array. The reduced chi-squared for the full array model was found to be about one order of magnitude lower than that for the individual-electrode model. Discrimination of glucose from chemical interference by the other three species is accomplished through a combination of enzyme catalysis, metal electrocatalysis, and membrane surface charge. The benefit of incorporating enzyme electrodes into the sensor array is illustrated by the lower correlation coefficients between different enzyme electrodes relative to non-enzyme coated electrodes. This approach can be more generally applied to detection of other substrates of oxidoreductase enzymes.

  19. Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

    Directory of Open Access Journals (Sweden)

    Tomi Roinila

    2014-07-01

    Full Text Available Silicon nanowire-based field-effect transistors (SiNW FETs have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is seen in the voltage–current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source. Studies have shown that leakage current is frequency dependent. Measurements of such frequency characteristics can provide valuable tools in validating the functionality of the used transistor. The measurements can also be an advantage in developing new detection technologies utilizing SiNW FETs. The frequency-domain responses can be measured by using a commercial sine-sweep-based network analyzer. However, because the analyzer takes a long time, it effectively prevents the development of most practical applications. Another problem with the method is that in order to produce sinusoids the signal generator has to cope with a large number of signal levels. This may become challenging in developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The methods is verified by experimental measurements from an n-type SiNW FET.

  20. Integrating silicon nanowire field effect transistor, microfluidics and air sampling techniques for real-time monitoring biological aerosols.

    Science.gov (United States)

    Shen, Fangxia; Tan, Miaomiao; Wang, Zhenxing; Yao, Maosheng; Xu, Zhenqiang; Wu, Yan; Wang, Jindong; Guo, Xuefeng; Zhu, Tong

    2011-09-01

    Numerous threats from biological aerosol exposures, such as those from H1N1 influenza, SARS, bird flu, and bioterrorism activities necessitate the development of a real-time bioaerosol sensing system, which however is a long-standing challenge in the field. Here, we developed a real-time monitoring system for airborne influenza H3N2 viruses by integrating electronically addressable silicon nanowire (SiNW) sensor devices, microfluidics and bioaerosol-to-hydrosol air sampling techniques. When airborne influenza H3N2 virus samples were collected and delivered to antibody-modified SiNW devices, discrete nanowire conductance changes were observed within seconds. In contrast, the conductance levels remained relatively unchanged when indoor air or clean air samples were delivered. A 10-fold increase in virus concentration was found to give rise to about 20-30% increase in the sensor response. The selectivity of the sensing device was successfully demonstrated using H1N1 viruses and house dust allergens. From the simulated aerosol release to the detection, we observed a time scale of 1-2 min. Quantitative polymerase chain reaction (qPCR) tests revealed that higher virus concentrations in the air samples generally corresponded to higher conductance levels in the SiNW devices. In addition, the display of detection data on remote platforms such as cell phone and computer was also successfully demonstrated with a wireless module. The work here is expected to lead to innovative methods for biological aerosol monitoring, and further improvements in each of the integrated elements could extend the system to real world applications.

  1. Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

    Science.gov (United States)

    Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen

    2017-03-01

    In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs with two channel crystallographic orientations and and six different cross-section profiles. In the first part, we study the impact of quantum corrections on the gate capacitance and mobile charge in the channel. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic performance of the NWTs, is also investigated. The influence of the rotating of the NWTs cross-sectional geometry by 90° on charge distribution in the channel is also studied. We compare the correlation between the charge profile in the channel and cross-sectional dimension for circular transistor with four different cross-sections diameters: 5 nm, 6 nm, 7 nm and 8 nm. In the second part of this paper, we expand the computational study by including different gate lengths for some of the Si NWTs. As a result, we establish a correlation between the mobile charge distribution in the channel and the gate capacitance, drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All calculations are based on a quantum mechanical description of the mobile charge distribution in the channel. This description is based on the solution of the Schrödinger equation in NWT cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions.

  2. Rear interface engineering of hybrid organic-silicon nanowire solar cells via blade coating.

    Science.gov (United States)

    Lai, Yi-Chun; Chang, Yu-Fan; Tsai, Pei-Ting; Chang, Jan-kai; Tseng, Wei-Hsuan; Lin, Yi-Cheng; Hsiao, Chu-Yen; Zan, Hsiao-Wen; Wu, Chih-I; Chi, Gou-Chung; Meng, Hsin-Fei; Yu, Peichen

    2016-01-25

    In this work, we investigate blade-coated organic interlayers at the rear surface of hybrid organic-silicon photovoltaics based on two small molecules: Tris(8-hydroxyquinolinato) aluminium (Alq(3)) and 1,3-bis(2-(4-tert-butylphenyl)-1,3,4-oxadiazol-5-yl) benzene (OXD-7). In particular, soluble Alq(3) resulting in a uniform thin film with a root-mean-square roughness organic-silicon photovoltaics.

  3. Electroless selective deposition of gold nano-array for silicon nanowires growth

    Directory of Open Access Journals (Sweden)

    Ruiz-Gomes E.

    2014-01-01

    Full Text Available Nanopatterns of gold clusters on a large surface of oriented Si(111 substrates, from the galvanic displacement of gold salt (via the spontaneous reduction of AuCl4 -, are demonstrated in this work. The Si substrate is patterned by Focused Ion Beam (FIB prior to being dipped in a gold solution. Here, we show that these patterns lead to successful control of the position and size of gold clusters. Sequential patterning reveals a powerful maskless alternative to surface preparation prior to Si nanowire growth

  4. 1.55 micro m In(Ga)N Nanowire Lasers on Silicon

    Science.gov (United States)

    2012-08-01

    the origins of which have remained a subject of intense debate . The lack of intrinsic InN, the uncontrolled surface charge properties, and the...gas (2DEG) at the grown surfaces of both thin film and nanowire structures, the origins of which have remained a subject of intense debate . For...tube cavities, a U- shaped mesa , first defined by etching up to the In0.81Ga0.19As0.41P0.59 layer using HCl:HNO3:H2O (1:2:1) solution. Subsequently

  5. Proteins as "dopable" bio-electronic materials

    Science.gov (United States)

    Cahen, David

    2013-02-01

    Proteins are surprisingly good solid-state electronic conductors. This holds also for proteins without any known biological electron transfer function. How do they do it? To answer this question we measure solid-state electron transport (ETp) across proteins that are "dry" (only tightly bound water, to retain the conformation, still present). We compare results for the electron transfer (ET) protein, Azurin (Az), the proton-pumping membrane protein Bacteriorhodopsin (bR), and for Human and Bovine Serum Albumin (HSA and BSA). Clear differences between these proteins are seen, which preserve their structure in the solid state measurement configuration. Importantly for future bioelectronics, the results are sensitive to protein modification, e.g., removing or disconnecting the retinal in bR and removing or replacing the Cu redox centre in Az. These cofactors can thus be viewed as natural dopants for proteins. Insight in the ETp mechanism comes from temperature-dependent studies. Az shows 40-360K temperature-independent ETp across its 3.5 nm long axis, until its denaturation temperature, indicative of tunneling. Cu removal, replacement (by Zn) or deuteration changes this to thermally activated ETp. This suggests hopping and involvement of the amide backbone in the ETp. The latter, which rhymes with indications from ETp experiments on oligopeptide and simulations of ET in proteins, opens the way for modeling what otherwise is an awfully complex system. Below 200K all proteins and their variants show temperature-independent ETp. We can furthermore make a totally electrically inactive protein, HSA, into an efficient ETp medium by doping it with natural poly-ene. Putting our data in perspective by comparing them to all known protein ETp data in the literature, we conclude that, in general, proteins are well described as dopable molecular wires.

  6. High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

    KAUST Repository

    Huang, Ruo-Gu

    2011-06-24

    We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

  7. Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowires.

    Science.gov (United States)

    Massiot, Inès; Colin, Clément; Sauvan, Christophe; Lalanne, Philippe; Cabarrocas, Pere Roca I; Pelouard, Jean-Luc; Collin, Stéphane

    2013-05-06

    We propose a design to confine light absorption in flat and ultra-thin amorphous silicon solar cells with a one-dimensional silver grating embedded in the front window of the cell. We show numerically that multi-resonant light trapping is achieved in both TE and TM polarizations. Each resonance is analyzed in detail and modeled by Fabry-Perot resonances or guided modes via grating coupling. This approach is generalized to a complete amorphous silicon solar cell, with the additional degrees of freedom provided by the buffer layers. These results could guide the design of resonant structures for optimized ultra-thin solar cells.

  8. Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

    Science.gov (United States)

    Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2012-08-08

    Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

  9. Formation of Silicon/Carbon Core-Shell Nanowires Using Carbon Nitride Nanorods Template and Gold Catalyst

    Directory of Open Access Journals (Sweden)

    Ilyani Putri Jamal

    2013-01-01

    Full Text Available In this experiment, silicon/carbon (Si/C core-shell nanowires (NWs were synthesized using gold nanoparticles (Au NPs coated carbon nitride nanorods (CN NRs as a template. To begin with, the Au NPs coated CN NRs were prepared by using plasma-enhanced chemical vapor deposition assisted with hot-wire evaporation technique. Fourier transform infrared spectrum confirms the C–N bonding of the CN NRs, while X-ray diffraction pattern indicates the crystalline structure of the Au NPs and amorphous structure of the CN NRs. The Au NPs coated CN NRs were thermally annealed at temperature of 800°C in nitrogen ambient for one hour to induce the growth of Si/C core-shell NWs. The growth mechanism for the Si/C core-shell NWs is related to the nitrogen evolution and solid-liquid-solid growth process which is a result of the thermal annealing. The formation of Si/C core-shell NWs is confirmed by electron spectroscopic imaging analysis.

  10. Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

    Science.gov (United States)

    Fang, Jingtian; Vandenberghe, William G.; Fu, Bo; Fischetti, Massimo V.

    2016-01-01

    We present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band structure, enabling a detailed study of the characteristics of devices with a nanometer-scale channel and body. Assuming externally applied potentials that change slowly along the electron-transport direction, we invoke the envelope-wavefunction approximation to apply the open boundary conditions and to develop the transport equations. We construct the full-band open boundary conditions (self-energies of device contacts) from the complex band structure of the contacts. We solve the transport equations and present the expressions required to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ˜66 mV/decade and a drain-induced barrier-lowering of ˜2.5 mV/V. Our theoretical calculations predict that low-dimensionality channels in a 3D GAA architecture are able to meet the performance requirements of future devices in terms of SS swing and electrostatic control.

  11. Life cycle environmental impact of high-capacity lithium ion battery with silicon nanowires anode for electric vehicles.

    Science.gov (United States)

    Li, Bingbing; Gao, Xianfeng; Li, Jianyang; Yuan, Chris

    2014-01-01

    Although silicon nanowires (SiNW) have been widely studied as an ideal material for developing high-capacity lithium ion batteries (LIBs) for electric vehicles (EVs), little is known about the environmental impacts of such a new EV battery pack during its whole life cycle. This paper reports a life cycle assessment (LCA) of a high-capacity LIB pack using SiNW prepared via metal-assisted chemical etching as anode material. The LCA study is conducted based on the average U.S. driving and electricity supply conditions. Nanowastes and nanoparticle emissions from the SiNW synthesis are also characterized and reported. The LCA results show that over 50% of most characterized impacts are generated from the battery operations, while the battery anode with SiNW material contributes to around 15% of global warming potential and 10% of human toxicity potential. Overall the life cycle impacts of this new battery pack are moderately higher than those of conventional LIBs but could be actually comparable when considering the uncertainties and scale-up potential of the technology. These results are encouraging because they not only provide a solid base for sustainable development of next generation LIBs but also confirm that appropriate nanomanufacturing technologies could be used in sustainable product development.

  12. Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Jingtian, E-mail: jingtian.fang@utdallas.edu; Vandenberghe, William G.; Fu, Bo; Fischetti, Massimo V. [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2016-01-21

    We present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band structure, enabling a detailed study of the characteristics of devices with a nanometer-scale channel and body. Assuming externally applied potentials that change slowly along the electron-transport direction, we invoke the envelope-wavefunction approximation to apply the open boundary conditions and to develop the transport equations. We construct the full-band open boundary conditions (self-energies of device contacts) from the complex band structure of the contacts. We solve the transport equations and present the expressions required to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ∼66 mV/decade and a drain-induced barrier-lowering of ∼2.5 mV/V. Our theoretical calculations predict that low-dimensionality channels in a 3D GAA architecture are able to meet the performance requirements of future devices in terms of SS swing and electrostatic control.

  13. Molecular layer deposition of APTES on silicon nanowire biosensors: Surface characterization, stability and pH response

    Science.gov (United States)

    Liang, Yuchen; Huang, Jie; Zang, Pengyuan; Kim, Jiyoung; Hu, Walter

    2014-12-01

    We report the use of molecular layer deposition (MLD) for depositing 3-aminopropyltriethoxysilane (APTES) on a silicon dioxide surface. The APTES monolayer was characterized using spectroscopic ellipsometry, contact angle goniometry, and atomic force microscopy. Effects of reaction time of repeating pulses and simultaneous feeding of water vapor with APTES were tested. The results indicate that the synergistic effects of water vapor and reaction time are significant for the formation of a stable monolayer. Additionally, increasing the number of repeating pulses improved the APTES surface coverage but led to saturation after 10 pulses. In comparing MLD with solution-phase deposition, the APTES surface coverage and the surface quality were nearly equivalent. The hydrolytic stability of the resulting films was also studied. The results confirmed that the hydrolysis process was necessary for MLD to obtain stable surface chemistry. Furthermore, we compared the pH sensing results of Si nanowire field effect transistors (Si NWFETs) modified by both the MLD and solution methods. The highly repeatable pH sensing results reflected the stability of APTES monolayers. The results also showed an improved pH response of the sensor prepared by MLD compared to the one prepared by the solution treatment, which indicated higher surface coverage of APTES.

  14. Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Yang, Chia-Hao

    2013-01-14

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07 x 10⁻³Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7 x 10²⁰ cm⁻³ and 15.8 cm²/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5 G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56 V, and a short circuit current of JSC = 1.54 mA/cm² with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.

  15. Molecular layer deposition of APTES on silicon nanowire biosensors: Surface characterization, stability and pH response

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yuchen [Department of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Huang, Jie [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Zang, Pengyuan [Department of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Kim, Jiyoung [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Hu, Walter, E-mail: walter.hu@utdallas.edu [Department of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States)

    2014-12-15

    Graphical abstract: - Abstract: We report the use of molecular layer deposition (MLD) for depositing 3-aminopropyltriethoxysilane (APTES) on a silicon dioxide surface. The APTES monolayer was characterized using spectroscopic ellipsometry, contact angle goniometry, and atomic force microscopy. Effects of reaction time of repeating pulses and simultaneous feeding of water vapor with APTES were tested. The results indicate that the synergistic effects of water vapor and reaction time are significant for the formation of a stable monolayer. Additionally, increasing the number of repeating pulses improved the APTES surface coverage but led to saturation after 10 pulses. In comparing MLD with solution-phase deposition, the APTES surface coverage and the surface quality were nearly equivalent. The hydrolytic stability of the resulting films was also studied. The results confirmed that the hydrolysis process was necessary for MLD to obtain stable surface chemistry. Furthermore, we compared the pH sensing results of Si nanowire field effect transistors (Si NWFETs) modified by both the MLD and solution methods. The highly repeatable pH sensing results reflected the stability of APTES monolayers. The results also showed an improved pH response of the sensor prepared by MLD compared to the one prepared by the solution treatment, which indicated higher surface coverage of APTES.

  16. Magnetic-composite-modified polycrystalline silicon nanowire field-effect transistor for vascular endothelial growth factor detection and cancer diagnosis.

    Science.gov (United States)

    Chen, Hsiao-Chien; Qiu, Jian-Tai; Yang, Fu-Liang; Liu, Yin-Chih; Chen, Min-Cheng; Tsai, Rung-Ywan; Yang, Hung-Wei; Lin, Chia-Yi; Lin, Chu-Chi; Wu, Tzong-Shoon; Tu, Yi-Ming; Xiao, Min-Cong; Ho, Chia-Hua; Huang, Chien-Chao; Lai, Chao-Sung; Hua, Mu-Yi

    2014-10-01

    This study proposes a vascular endothelial growth factor (VEGF) biosensor for diagnosing various stages of cervical carcinoma. In addition, VEGF concentrations at various stages of cancer therapy are determined and compared to data obtained by computed tomography (CT) and cancer antigen 125 (CA-125). The increase in VEGF concentrations during operations offers useful insight into dosage timing during cancer therapy. This biosensor uses Avastin as the biorecognition element for the potential cancer biomarker VEGF and is based on a n-type polycrystalline silicon nanowire field-effect transistor (poly-SiNW-FET). Magnetic nanoparticles with poly[aniline-co-N-(1-one-butyric acid) aniline]-Fe3O4 (SPAnH-Fe3O4) shell-core structures are used as carriers for Avastin loading and provide rapid purification due to their magnetic properties, which prevent the loss of bioactivity; furthermore, the high surface area of these structures increases the quantity of Avastin immobilized. Average concentrations in human blood for species that interfere with detection specificity are also evaluated. The detection range of the biosensor for serum samples covers the results expected from both healthy individuals and cancer patients.

  17. In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

    Science.gov (United States)

    Mile, E.; Jourdan, G.; Bargatin, I.; Labarthe, S.; Marcoux, C.; Andreucci, P.; Hentz, S.; Kharrat, C.; Colinet, E.; Duraffourg, L.

    2010-04-01

    We report an actuation/detection scheme with a top-down nanoelectromechanical system (NEMS) for frequency shift based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for in-plane motion transduction. The process fabrication is fully CMOS (complementary metal-oxide-semiconductor) compatible. The results show a very large dynamic range of more than 100 dB and an unprecedented signal to background ratio of 69 dB providing an improvement of two orders of magnitude in the detection efficiency presented in the state of the art in NEMS fields. Such a dynamic range results from both negligible 1/f noise and very low Johnson noise compared to the thermomechanical noise. This simple low power detection scheme paves the way for new class of robust mass resonant sensors.

  18. Silicon nanowire arrays coated with electroless Ag for increased surface-enhanced Raman scattering

    Directory of Open Access Journals (Sweden)

    Fan Bai

    2015-05-01

    Full Text Available The ordered Ag nanorod (AgNR arrays are fabricated through a simple electroless deposition technique using the isolated Si nanowire (SiNW arrays as the Ag-grown scaffold. The AgNR arrays have the single-crystallized structure and the plasmonic crystal feature. It is found that the formation of the AgNR arrays is strongly dependent on the filling ratio of SiNWs. A mechanism is proposed based on the selective nucleation and the synergistic growth of Ag nanoparticles on the top of the SiNWs. Moreover, the special AgNR arrays grown on the substrate of SiNWs exhibit a detection sensitivity of 10−15M for rhodamine 6G molecules, which have the potential application to the highly sensitive surface-enhanced Raman scattering sensors.

  19. Limiting efficiency calculation of silicon single-nanowire solar cells with considering Auger recombination

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, Xiongfei; Wu, Shaolong; Shang, Aixue; Li, Xiaofeng, E-mail: xfli@suda.edu.cn [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006 (China)

    2015-02-09

    Single-nanowire solar cells (SNSCs) have attracted considerable attention due to their unique light-harvesting capability mediated by the optical antenna effect and the high photoconversion efficiency due to the orthogonalization of the carrier collection to the photon incidence. We present a detailed prediction of the light-conversion efficiency of Si SNSCs based on finite-element simulation and thermodynamic balance analysis, with especially focusing on the comparison between SNSCs and film systems. Carrier losses due to radiative and Auger recombinations are introduced in the analysis of the limiting efficiency, which show that the Auger recombination plays a key role in accurately predicting the efficiency of Si SNSCs, otherwise, the device performance would be strongly overestimated. The study paves a more realistic way to evaluate the nanostructured solar cells based on indirect-band photoactive materials.

  20. Biosensors and bioelectronics on smartphone for portable biochemical detection.

    Science.gov (United States)

    Zhang, Diming; Liu, Qingjun

    2016-01-15

    Smartphone has been widely integrated with sensors, such as test strips, sensor chips, and hand-held detectors, for biochemical detections due to its portability and ubiquitous availability. Utilizing built-in function modules, smartphone is often employed as controller, analyzer, and displayer for rapid, real-time, and point-of-care monitoring, which can significantly simplify design and reduce cost of the detecting systems. This paper presents a review of biosensors and bioelectronics on smartphone for portable biochemical detections. The biosensors and bioelectronics based on smartphone can mainly be classified into biosensors using optics, surface plasmon resonance, electrochemistry, and near-field communication. The developments of these biosensors and bioelectronics on smartphone are reviewed along with typical biochemical detecting cases. Sensor strategies, detector attachments, and coupling methods are highlighted to show designs of the compact, lightweight, and low-cost sensor systems. The performances and advantages of these designs are introduced with their applications in healthcare diagnosis, environment monitoring, and food evaluation. With advances in micro-manufacture, sensor technology, and miniaturized electronics, biosensor and bioelectronic devices on smartphone can be used to perform biochemical detections as common and convenient as electronic tag readout in foreseeable future.

  1. Optical performance monitoring at 640Gb/s via slow-light in a silicon nanowire

    CERN Document Server

    Corcoran, B; Pelusi, M; Grillet, C; White, T P; Faolain, L O; Krauss, T F; Eggleton, B J; Moss, David J

    2015-01-01

    We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 micron) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640 Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.

  2. 双氧水浓度对硅纳米线生长的影响%Effects of Hydrogen Peroxide Concentration on the Growth of Silicon Nanowires

    Institute of Scientific and Technical Information of China (English)

    林星星; 沈文忠

    2012-01-01

    The influence of hydrogen peroxide concentration on the morphology, growth rate and photoluminescence of silicon nanowires in a two-step metal assisted chemical etching method is studied. It is shown that the growth rate increases with the increased concentration. The photoluminescence spectra exhibit broad visible emission centered around 685 nm originating from porous silicon structures. Formation of the porous structure is attributed to the renucleation of Ag nanoparticles on the sidewalls of silicon nanowires through diffusion process.%利用两步法金属辅助化学刻蚀(MACE)法制备硅纳米线(SiNWs)样品。研究了双氧水(H2O2)浓度对SiNWs样品形貌、生长速率以及发光特性的影响。发现随着H2O2浓度的增加,SiNWs样品生长速率随之提高,同时出现了位于685nm附近较宽的来源于多孔硅结构的光致发光峰。实验结果表明,多孔硅结构的形成与银离子(Ag+)通过扩散作用在SiNWs样品侧壁重新沉积有关。

  3. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures.

    Science.gov (United States)

    Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; Nguyen, Binh-Minh; Li, Nan; Zhang, Shixiong; Yoo, Jinkyoung

    2017-01-19

    We report on strain-induced structural defect formation in core Si nanowires of a Si/Ge core/shell nanowire heterostructure and the influence of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in the Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only the Ge shell region or in both the Ge shell and Si core regions and is associated with the increase of the shell volume fraction. The relaxation of the misfit strain in the [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of crossover of defect formation is of great importance for understanding heteroepitaxy in radial heterostructures at the nanoscale and for building three dimensional heterostructures for the various applications. Furthermore, the effect of the defect formation on the nanomaterial's functionality is investigated using electrochemical performance tests. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.

  4. Graphene quantum dots modified silicon nanowire array for ultrasensitive detection in the gas phase

    Science.gov (United States)

    Li, T. Y.; Duan, C. Y.; Zhu, Y. X.; Chen, Y. F.; Wang, Y.

    2017-03-01

    Si nanostructure-based gas detectors have attracted much attention due to their huge surface areas, relatively high carrier mobility, maneuverability for surface functionalization and compatibility to modern electronic industry. However, the unstable surface of Si, especially for the nanostructures in a corrosive atmosphere, hinders their sensitivity and reproducibility when used for detection in the gas phase. In this study, we proposed a novel strategy to fabricate a Si-based gas detector by using the vertically aligned Si nanowire (SiNW) array as a skeleton and platform, and decorated chemically inert graphene quantum dots (GQDs) to protect the SiNWs from oxidation and promote the carriers’ interaction with the analytes. The radial core–shell structures of the GQDs/SiNW array were then assembled into a resistor-based gas detection system and evaluated by using nitrogen dioxide (NO2) as the model analyte. Compared to the bare SiNW array, our novel sensor exhibited ultrahigh sensitivity for detecting trace amounts of NO2 with the concentration as low as 10 ppm in room temperature and an immensely reduced recovery time, which is of significant importance for their practical application. Meanwhile, strikingly, reproducibility and stability could also be achieved by showing no sensitivity decline after storing the GQDs/SiNW array in air for two weeks. Our results demonstrate that protecting the surface of the SiNW array with chemically inert GQDs is a feasible strategy to realize ultrasensitive detection in the gas phase.

  5. Thin Film Silicon Nanowire/PEDOT:PSS Hybrid Solar Cells with Surface Treatment

    Science.gov (United States)

    Wang, Hao; Wang, Jianxiong; Hong, Lei; Tan, Yew Heng; Tan, Chuan Seng; Rusli

    2016-06-01

    SiNW/PEDOT:PSS hybrid solar cells are fabricated on 10.6-μm-thick crystalline Si thin films. Cells with Si nanowires (SiNWs) of different lengths fabricated using the metal-catalyzed electroless etching (MCEE) technique have been investigated. A surface treatment process using oxygen plasma has been applied to improve the surface quality of the SiNWs, and the optimized cell with 0.7-μm-long SiNWs achieved a power conversion efficiency (PCE) of 7.83 %. The surface treatment process is found to remove surface defects and passivate the SiNWs and substantially improve the average open circuit voltage from 0.461 to 0.562 V for the optimized cell. The light harvesting capability of the SiNWs has also been investigated theoretically using optical simulation. It is found that the inherent randomness of the MCEE SiNWs, in terms of their diameter and spacing, accounts for the excellent light harvesting capability. In comparison, periodic SiNWs of comparable dimensions have been shown to exhibit much poorer trapping and absorption of light.

  6. Application of metal nanowire networks on hydrogenated amorphous silicon thin film solar cells.

    Science.gov (United States)

    Xie, Shouyi; Hou, Guofu; Chen, Peizhuan; Jia, Baohua; Gu, Min

    2017-02-24

    We demonstrate the application of metal nanowire (NW) networks as a transparent electrode on hydrogenated amorphous Si (a-Si:H) solar cells. We first systematically investigate the optical performances of the metal NW networks on a-Si:H solar cells in different electrode configurations through numerical simulations to fully understand the mechanisms to guide the experiments. The theoretically optimized configuration is discovered to be metal NWs sandwiched between a 40 nm indium tin oxide (ITO) layer and a 20 nm ITO layer. The overall performances of the solar cells integrated with the metal NW networks are experimentally studied. It has been found the experimentally best performing NW integrated solar cell deviates from the theoretically predicated design due to the performance degradation induced by the fabrication complicity. A 6.7% efficiency enhancement was achieved for the solar cell with metal NW network integrated on top of a 60 nm thick ITO layer compared to the cell with only the ITO layer due to enhanced electrical conductivity by the metal NW network.

  7. Organic nanowire/crystalline silicon p-n heterojunctions for high-sensitivity, broadband photodetectors.

    Science.gov (United States)

    Deng, Wei; Jie, Jiansheng; Shang, Qixun; Wang, Jincheng; Zhang, Xiujuan; Yao, Shenwen; Zhang, Qing; Zhang, Xiaohong

    2015-01-28

    Organic/inorganic hybrid devices are promising candidates for high-performance, low-cost optoelectronic devices, by virtue of their unique properties. Polycrystalline/amorphous organic films are widely used in hybrid devices, because defects in the films hamper the improvement of device performance. Here, we report the construction of 2,4-bis[4-(N,N-dimethylamino)phenyl]squaraine (SQ) nanowire (NW)/crystalline Si (c-Si) p-n heterojunctions. Thanks to the high crystal quality of the SQ NWs, the heterojunctions exhibit excellent diode characteristics in darkness. It is significant that the heterojunctions have been found to be capable of detecting broadband light with wavelengths spanning from ultraviolet (UV) light, to visible (Vis) light, to near-infrared (NIR) light, because of the complementary spectrum absorption of SQ NWs with Si. The junction is demonstrated to play a core role in enhancing the device performance, in terms of ultrahigh sensitivity, excellent stability, and fast response. The photovoltaic characteristics of the heterojunctions are further investigated, revealing a power conversion efficiency (PCE) of up to 1.17%. This result also proves the potential of the device as self-powered photodetectors operating at zero external bias voltage. This work presents an important advance in constructing single-crystal organic nanostructure/inorganic heterojunctions and will enable future exploration of their applications in broadband photodetectors and solar cells.

  8. Silicon nanowire heterostructures for advanced energy and environmental applications: a review

    Science.gov (United States)

    Ghosh, Ramesh; Giri, P. K.

    2017-01-01

    Semiconductor nanowires (NWs), in particular Si NWs, have attracted much attention in the last decade for their unique electronic properties and potential applications in several emerging areas. With the introduction of heterostructures (HSs) on NWs, new functionalities are obtained and the device performance is improved significantly in many cases. Due to the easy fabrication techniques, excellent optoelectronic properties and compatibility of forming HSs with different inorganic/organic materials, Si NW HSs have been utilized in various configurations and device architectures. Herein, we review the recent developments in Si NW HS-based devices including the fabrication techniques, properties (e.g., light emitting, antireflective, photocatalytic, electrical, photovoltaic, sensing etc) and related emerging applications in energy generation, conversion, storage, and environmental cleaning and monitoring. In particular, recent advances in Si NW HS-based solar photovoltaics, light-emitting devices, thermoelectrics, Li-ion batteries, supercapacitors, hydrogen generation, artificial photosynthesis, photocatalytic degradation of organic dyes in water treatment, chemical and gas sensors, biomolecular sensors for microbial monitoring etc have been addressed in detail. The problems and challenges in utilizing Si NW HSs in device applications and the key parameters to improve the device performance are pointed out. The recent trends in the commercial applications of Si NW HS-based devices and future outlook of the field are presented at the end.

  9. Application of metal nanowire networks on hydrogenated amorphous silicon thin film solar cells

    Science.gov (United States)

    Xie, Shouyi; Hou, Guofu; Chen, Peizhuan; Jia, Baohua; Gu, Min

    2017-02-01

    We demonstrate the application of metal nanowire (NW) networks as a transparent electrode on hydrogenated amorphous Si (a-Si:H) solar cells. We first systematically investigate the optical performances of the metal NW networks on a-Si:H solar cells in different electrode configurations through numerical simulations to fully understand the mechanisms to guide the experiments. The theoretically optimized configuration is discovered to be metal NWs sandwiched between a 40 nm indium tin oxide (ITO) layer and a 20 nm ITO layer. The overall performances of the solar cells integrated with the metal NW networks are experimentally studied. It has been found the experimentally best performing NW integrated solar cell deviates from the theoretically predicated design due to the performance degradation induced by the fabrication complicity. A 6.7% efficiency enhancement was achieved for the solar cell with metal NW network integrated on top of a 60 nm thick ITO layer compared to the cell with only the ITO layer due to enhanced electrical conductivity by the metal NW network.

  10. Non-Faradaic electrical impedimetric investigation of the interfacial effects of neuronal cell growth and differentiation on silicon nanowire transistors.

    Science.gov (United States)

    Lin, Shu-Ping; Vinzons, Lester U; Kang, Yu-Shan; Lai, Tung-Yen

    2015-05-13

    Silicon nanowire field-effect transistor (SiNW FET) devices have been interfaced with cells; however, their application for noninvasive, real-time monitoring of interfacial effects during cell growth and differentiation on SiNW has not been fully explored. Here, we cultured rat adrenal pheochromocytoma (PC12) cells, a type of neural progenitor cell, directly on SiNW FET devices to monitor cell adhesion during growth and morphological changes during neuronal differentiation for a period of 5-7 d. Monitoring was performed by measuring the non-Faradaic electrical impedance of the cell-SiNW FET system using a precision LCR meter. Our SiNW FET devices exhibited changes in impedance parameters during cell growth and differentiation because of the negatively charged cell membrane, seal resistance, and membrane capacitance at the cell/SiNW interface. It was observed that during both PC12 cell growth and neuronal differentiation, the impedance magnitude increased and the phase shifted to more negative values. However, impedance changes during cell growth already plateaued 3 d after seeding, while impedance changes continued until the last observation day during differentiation. Our results also indicate that the frequency shift to above 40 kHz after growth factor induction resulted from a larger coverage of cell membrane on the SiNWs due to distinctive morphological changes according to vinculin staining. Encapsulation of PC12 cells in a hydrogel scaffold resulted in a lack of trend in impedance parameters and confirmed that impedance changes were due to the cells. Moreover, cytolysis of the differentiated PC12 cells led to significant changes in impedance parameters. Equivalent electrical circuits were used to analyze the changes in impedance values during cell growth and differentiation. The technique employed in this study can provide a platform for performing investigations of growth-factor-induced progenitor cell differentiation.

  11. Fabrication and characterization of high-K dielectric integrated silicon nanowire sensor for DNA sensing application (Conference Presentation)

    Science.gov (United States)

    Jayakumar, Ganesh; Legallais, Maxime; Hellström, Per-Erik; Mouis, Mireille; Stambouli, Valérie; Ternon, Céline; Östling, Mikael

    2016-09-01

    1D silicon nanowires (SiNW) are attractive for charge based DNA sensing applications due to their small size and large surface to volume ratio. An ideal portable biosensor is expected to have repeatable and reliable sensitivity, selectivity, low production cost and small feature size. Instead of using tools such as e-beam that are capital and time intensive, we propose a low cost CMOS self-aligned-double-patterning I-line lithography process to fabricate 60 nm wide SiNW. DNA probes are grafted on a thin dielectric layer that is deposited on top of the SiNW surface. Here we used HfO2 instead of the usual SiO2. Indeed, compared to SiO2, HfO2 has been reported to have higher amount of OH groups on its surface leading to enhanced signal quality. We also report preliminary biosensor characterizations. After HfO2 functionalization and single-stranded DNA probe grafting onto the SiNWs, the sensors were first put in contact with fluorophore labelled complementary DNA targets in order to test the efficiency of DNA hybridization optically. Then, a sequence of hybridization, de-hybridization and re-hybridization steps was followed by Id-Vg measurements in order to measure the electrical response of the sensors to target DNA as well as recycling capability. After each step, SiNW devices exhibited a threshold voltage shift larger than device-to-device dispersion, showing that both complementary DNA hybridization and de-hybridization can be electrically detected. These results are very encouraging as they open new frontiers for heterogeneous integration of liquid interacting array of nano sensors with CMOS circuits to fabricate a complete lab on chip.

  12. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, Amretashis; Sarkar, Chandan Kumar [Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700 032 (India); Requejo, Felix G, E-mail: amretashis@gmail.com [INIFTA, Departmento de Quimica and Departmento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC/67-1900, La Plata (Argentina)

    2011-10-12

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO{sub 2}-SiO{sub 2} stack (stack-1) and the other with La{sub 2}O{sub 3}-SiO{sub 2} stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  13. Light-emitting silicon nanowires obtained by metal-assisted chemical etching

    Science.gov (United States)

    Irrera, Alessia; Josè Lo Faro, Maria; D’Andrea, Cristiano; Alessio Leonardi, Antonio; Artoni, Pietro; Fazio, Barbara; Picca, Rosaria Anna; Cioffi, Nicola; Trusso, Sebastiano; Franzò, Giorgia; Musumeci, Paolo; Priolo, Francesco; Iacona, Fabio

    2017-04-01

    This review reports on a new process for the synthesis of Si nanowires (NWs), based on the wet etching of Si substrates assisted by a thin metal film. The approach exploits the thickness-dependent morphology of the metal layers to define uncovered nanometric Si regions, which behave as precursor sites for the formation of very dense (up to 1 × 1012 NW cm‑2) arrays of long (up to several μm) and ultrathin (diameter of 5–9 nm) NWs. Intense photoluminescence (PL) peaks, characterized by maxima in the 640–750 nm range and by an external quantum efficiency of 0.5%, are observed when the Si NWs are excited at room temperature. The spectra show a blueshift if the size of the NW is decreased, in agreement with the occurrence of quantum confinement effects. The same etching process can be used to obtain ultrathin Si/Ge NWs from a Si/Ge multi-quantum well. The Si/Ge NWs exhibit—in addition to the Si-related PL peak—a signal at about 1240 nm due to Ge nanostructures. The huge surface area of the Si NW arrays can be exploited for sensing and analytical applications. The dependence of the PL intensity on the chemical composition of the surface indeed suggests interesting perspectives for the detection of gaseous molecules. Moreover, Si NWs decorated with Ag nanoparticles can be effectively employed in the interference-free laser desorption-ionization mass spectrometry of low-molecular-weight analytes. A device based on conductive Si NWs, showing intense and stable electroluminescence at an excitation voltage as low as 2 V, is also presented. The unique features of the proposed synthesis (the process is cheap, fast, maskless and compatible with Si technology) and the unusual optical properties of the material open the route towards new and unexpected perspectives for semiconductor NWs in photonics.

  14. Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography.

    Science.gov (United States)

    Munshi, A M; Dheeraj, D L; Fauske, V T; Kim, D C; Huh, J; Reinertsen, J F; Ahtapodov, L; Lee, K D; Heidari, B; van Helvoort, A T J; Fimland, B O; Weman, H

    2014-02-12

    We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are defined in a SiO2 mask on 2 in. Si wafers using nanoimprint lithography (NIL) for the growth of positioned GaAs NWs. To optimize the yield of vertical NWs the MBE growth parameter space is tuned, including Ga predeposition time, Ga and As fluxes, growth temperature, and annealing treatment prior to NW growth. In addition, a non-negligible radial growth is observed with increasing growth time and is found to be independent of the As species (i.e., As2 or As4) and the growth temperatures studied. Cross-sectional transmission electron microscopy analysis of the GaAs NW/Si substrate heterointerface reveals an epitaxial growth where NW base fills the oxide hole opening and eventually extends over the oxide mask. These findings have important implications for NW-based device designs with axial and radial p-n junctions. Finally, NIL positioned GaAs/AlGaAs core-shell heterostructured NWs are grown on Si to study the optical properties of the NWs. Room-temperature photoluminescence spectroscopy of ensembles of as-grown core-shell NWs reveals uniform and high optical quality, as required for the subsequent device applications. The combination of NIL and MBE thereby demonstrates the successful heterogeneous integration of highly uniform GaAs NWs on Si, important for fabricating high throughput, large-area position-controlled NW arrays for various optoelectronic device applications.

  15. Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers

    Energy Technology Data Exchange (ETDEWEB)

    Gonchar, K. A., E-mail: k.a.gonchar@gmail.com; Osminkina, L. A. [Moscow State University, Faculty of Physics (Russian Federation); Sivakov, V. [Leibniz Institute of Photonic Technology (Germany); Lysenko, V. [Institut National des Sciences Appliquées (INSA) de Lyon, Nanotechnology Institute of Lyon (France); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

    2014-12-15

    Layers of Si nanowires produced by the metal-assisted chemical etching of (100)-oriented single-crystal p-Si wafers with a resistivity of 1–20 Ω · cm are studied by reflectance spectroscopy, Raman spectros-copy, and photoluminescence measurements. The nanowire diameters are 20–200 nm. The wafers are supplied by three manufacturing companies and distinguished by their different lifetimes of photoexcited charge carriers. It is established that the Raman intensity for nanowires longer than 1 μm is 3–5 times higher than that for the substrates. The interband photoluminescence intensity of nanowires at the wavelength 1.12 μm is substantially higher than that of the substrates and reaches a maximum for samples with the longest bulk lifetime, suggesting a low nonradiative recombination rate at the nanowire surfaces.

  16. Facile fabrication of a silicon nanowire sensor by two size reduction steps for detection of alpha-fetoprotein biomarker of liver cancer

    Science.gov (United States)

    Binh Pham, Van; ThanhTung Pham, Xuan; Nhat Khoa Phan, Thanh; Thanh Tuyen Le, Thi; Chien Dang, Mau

    2015-12-01

    We present a facile technique that only uses conventional micro-techniques and two size-reduction steps to fabricate wafer-scale silicon nanowire (SiNW) with widths of 200 nm. Initially, conventional lithography was used to pattern SiNW with 2 μm width. Then the nanowire width was decreased to 200 nm by two size-reduction steps with isotropic wet etching. The fabricated SiNW was further investigated when used with nanowire field-effect sensors. The electrical characteristics of the fabricated SiNW devices were characterized and pH sensitivity was investigated. Then a simple and effective surface modification process was carried out to modify SiNW for subsequent binding of a desired receptor. The complete SiNW-based biosensor was then used to detect alpha-fetoprotein (AFP), one of the medically approved biomarkers for liver cancer diagnosis. Electrical measurements showed that the developed SiNW biosensor could detect AFP with concentrations of about 100 ng mL-1. This concentration is lower than the necessary AFP concentration for liver cancer diagnosis.

  17. Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 陆梅; 王成伟; 力虎林

    2002-01-01

    The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler- Nordheim tunneling mechanism and current-voltage (I -V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.

  18. Observation of Aharonov-Bohm and Al'tshuler-Aronov-Spivak oscillations in the background of universal conductance fluctuations in silicon nanowires

    Science.gov (United States)

    Mtsuko, Davie; Aslan, Tahir; Ncube, Siphephile; Coleman, Christopher; Wamwangi, Daniel; Bhattacharyya, Somnath

    2016-02-01

    Magnetoresistance (MR) oscillations of multiple periodicities are recorded in singly connected silicon nanowires of diameter ≈50 \\text{nm} . At 100 K we observe oscillations of periodicity ≈1.78 \\text{T} and 0.444 T corresponding to h/e and h/4e Aharonov-Bohm (AB) oscillations, whereas at 10 K we record periodicities of 0.98 T, 0.49 T and 0.25 T corresponding to h/e, h/2e (Al'tshuler-Aronov-Spivak (AAS)) and h/4e oscillations. At 2.5 K we find magnetoresistance oscillations with multiple periodicities of 1.3 T, 0.52 T, and 0.325 T corresponding to AB and AAS oscillations. The h/2e and h/4e peaks can be attributed to the interference of time-reversed paths originating from the core orbits that scatter coherently on the surface of the nanowires multiple times. We also observed 20 mT and 60 mT oscillations of small amplitude superimposed on a quasi-periodic background which we attribute to the quantum interference of special surface states associated with skipping orbits that propagate quasi-ballistically. The aperiodic fluctuations in the MR at all temperatures are universal conductance fluctuations (UCF) originating from randomly spaced impurity scattering in the core of the nanowire.

  19. Joule heating in nanowires

    Science.gov (United States)

    Fangohr, Hans; Chernyshenko, Dmitri S.; Franchin, Matteo; Fischbacher, Thomas; Meier, Guido

    2011-08-01

    We study the effect of Joule heating from electric currents flowing through ferromagnetic nanowires on the temperature of the nanowires and on the temperature of the substrate on which the nanowires are grown. The spatial current density distribution, the associated heat generation, and diffusion of heat are simulated within the nanowire and the substrate. We study several different nanowire and constriction geometries as well as different substrates: (thin) silicon nitride membranes, (thick) silicon wafers, and (thick) diamond wafers. The spatially resolved increase in temperature as a function of time is computed. For effectively three-dimensional substrates (where the substrate thickness greatly exceeds the nanowire length), we identify three different regimes of heat propagation through the substrate: regime (i), where the nanowire temperature increases approximately logarithmically as a function of time. In this regime, the nanowire temperature is well described analytically by You [Appl. Phys. Lett.APPLAB0003-695110.1063/1.2399441 89, 222513 (2006)]. We provide an analytical expression for the time tc that marks the upper applicability limit of the You model. After tc, the heat flow enters regime (ii), where the nanowire temperature stays constant while a hemispherical heat front carries the heat away from the wire and into the substrate. As the heat front reaches the boundary of the substrate, regime (iii) is entered, where the nanowire and substrate temperature start to increase rapidly. For effectively two-dimensional substrates (where the nanowire length greatly exceeds the substrate thickness), there is only one regime in which the temperature increases logarithmically with time for large times, before the heat front reaches the substrate boundary. We provide an analytical expression, valid for all pulse durations, that allows one to accurately compute this temperature increase in the nanowire on thin substrates.

  20. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    Science.gov (United States)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  1. Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

    Directory of Open Access Journals (Sweden)

    Arash Dehzangi

    2011-01-01

    Full Text Available Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronics in order to decrease the energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by Atomic Force Microscopy (AFM and wet etching on p-type Silicon On Insulator (SOI wafer. Then, we checked the characteristic and conductance trend in this device regarding to semi-classical approach by Semiconductor Probe Analyser (SPA. Results: We observed in characteristic of the device directly proportionality of the negative gate voltage and Source-Drain current. In semi classical approach, negative Gate voltage decreased the energy States of the Nano-wire between the source and the drain. The graph for positive gate voltage plotted as well to check. In other hand, the conductance will be following characteristic due to varying the gate voltage under the different drain-source voltage. Conclusion: The channel energy states are supposed to locate between two electrochemical potentials of the contacts in order to transform the charge. For the p-type channel the transform of the carriers is located in valence band and changing the positive or negative gate voltage, making the valence band energy states out of or in the area between the electrochemical potentials of the contacts causing the current reduced or increased.

  2. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    Science.gov (United States)

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors.

  3. Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain

    Science.gov (United States)

    Ho, Ching-Yuan; Chang, Yaw-Jen; Chiou, Y. L.

    2013-08-01

    The programming characteristics of gate-all-around silicon-oxide-nitride-oxide silicon (SONOS) nonvolatile memories are presented using NiSi/poly-Si nanowires (SiNW) Schottky barrier (SB) heterojunctions. The non-uniform thermal stress distribution on SiNW channels due to joule heating affected the carrier transport behavior. Under a high drain voltage, impact ionization was found as a large lateral field enhances carrier velocity. As gate voltage (Vg) increased, the difference in the drain current within a range of various temperature conditions can be mitigated because a high gate field lowers the SB height of a NiSi source/SiNW/NiSi drain junction to ensure efficient hot-carrier generation. By applying the Fowler-Nordheim programming voltage to the SONOS nanowire memory, the SB height (Φn = 0.34 eV) could be reduced by image force; thus, hot electrons could be injected from SB source/drain electrodes into the SiN storage node. To compare both SiNW and Si nanocrystal SONOS devices, the SB SiNW SONOS device was characterized experimentally to propose a wider threshold-voltage window, exhibiting efficient programming characteristics.

  4. Two-Copy Wavelength Conversion of an 80 Gbit/s Serial Data Signal Using Cross-Phase Modulation in a Silicon Nanowire and Detailed Pump-Probe Characterisation

    DEFF Research Database (Denmark)

    Ji, Hua; Cleary, C. S.; Dailey, J. M.;

    2012-01-01

    We experimentally demonstrate 80 Gbit/s wavelength conversion to two copies by simultaneously extracting the blue- and red-shifted sidebands from XPM in a silicon nanowire. Bit error rates of 10-9 with only ~2 dB power penalty is achieved for both sidebands. Detailed pump-probe characterisation r...

  5. 硅纳米线阵列的制备及其光电应用%Preparation and Optoelectronic Applications of Silicon Nanowire Arrays

    Institute of Scientific and Technical Information of China (English)

    刘莉; 曹阳; 贺军辉; 杨巧文

    2013-01-01

    Recent years, silicon nanowire arrays have aroused extensive attention among scientists and engineers due to their unique characteristics such as excellent antireflection in both wide wavelength range and wide incidence angle and their great potentials in the field of optoelectronics. This paper reviews the latest research progress in preparation of silicon nanowire arrays and their optoelectronic applications. The preparation methods that have been verified are classified mainly into two categories, i. e. , " bottom-up " and" top-down", including template-assisted chemical vapor deposition, chemical vapor deposition combined with Langmuir-Blodgett technology and metal-catalyzed chemical etching. The third method is at the present time the most frequently used as well as the simplest one, and is discussed in detail in respect of the etching steps, mechanism and controlling parameters. As for the optoelectronic applications of silicon nanowire arrays, this review mainly describes those in photodetectors, conventional solar cells, photoelectrochemical solar cells, photocatalytic water splitting, and photocatalytic degradation of organic pollutants. Finally, an outlook is made about how to improve the photoelectrical conversion efficiency and avoid the corrosion of silicon nanowire arrays, which indicates that surface modification and resulting properties may be a future research direction for silicon nanowire arrays research.%近年来,硅纳米线阵列在宽波段、宽入射角范围内优异的减反射性能及其在光电领域的巨大应用前景引起了相关研究者的广泛关注.本文综述了国内外硅纳米线阵列的制备及其在光电应用方面的最新研究进展.关于硅纳米线阵列的制备方法,主要从“自下而上”和“自上而下”两大类出发,分别阐述了模板辅助的化学气相沉积法、化学气相沉积结合Langmuir-Blodgett技术法和金属催化化学刻蚀法,其中重点介绍了目前使用最为

  6. Optical design of nanowire array on silicon thin film solar cell%硅薄膜太阳电池表面纳米线阵列光学设计∗

    Institute of Scientific and Technical Information of China (English)

    耿超; 郑义; 张永哲; 严辉

    2016-01-01

    陷光结构的优化是增加硅薄膜太阳电池光吸收进而提高其效率的关键技术之一.以硅纳米线阵列为代表的光子晶体微纳陷光结构具有突破传统陷光结构Yablonovith极限的巨大潜力.通常硅纳米线阵列可以用作太阳电池的增透减反层、轴向p-n结、径向p-n结.针对以上三种应用,本文运用有限时域差分(FDTD)法系统研究了硅纳米线阵列在300—1100 nm波段的光学特性.结果表明,当硅纳米线作为太阳电池的减反层时,周期P =300 nm,高度H =1.5µm,填充率(F R)为0.282条件下时,反射率最低为7.9%.当硅纳米线作为轴向p-n结电池时, P =500 nm, H =1.5µm, F R=0.55条件下纳米线阵列的吸收效率高达22.3%.硅纳米线作为径向p-n结电池时,其光吸收主要依靠纳米线,硅纳米线P =300 nm, H =6µm, F R=0.349条件下其吸收效率高达32.4%,进一步提高其高度吸收效率变化不再明显.此外,本文还分析了非周期性硅纳米线阵列的光学性质,与周期性硅纳米线阵列相比,直径随机分布和位置随机分布的硅纳米线阵列都可以使吸收效率进一步提高,相比于周期性硅纳米线阵列,优化后直径随机分布的硅纳米线阵列吸收效率提高了39%,吸收效率为27.8%.本文运用FDTD法对硅纳米线阵列的光学特性进行设计与优化,为硅纳米线阵列在太阳电池中的应用提供了理论支持.%Light trapping has been considered as an important strategy to increase the conversion efficiency of silicon thin film solar cell. It shows that photonic crystal with feature size comparable to the wavelength, for example, the silicon nanowire array has a great potential to exceed the conventional Yablonovitch 4n2 limit. Silicon nanowire array has been designed and constructed on silicon thin film solar cell due to its excellent optical properties. Generally, silicon nanowire array is used as the antireflection coating, axial or radial p-n junction of solar cell

  7. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

    KAUST Repository

    Najar, Adel

    2012-01-01

    We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

  8. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  9. Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 力虎林; 陆梅; 王成伟

    2002-01-01

    The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (/-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be

  10. Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting.

    Science.gov (United States)

    Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

    2016-12-01

    A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

  11. Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistors

    Science.gov (United States)

    Seongjae Cho,; Hee-Sauk Jhon,; Jung Hoon Lee,; Se Hwan Park,; Hyungcheol Shin,; Byung-Gook Park,

    2010-04-01

    In this study, a full-range approach from device level to circuit level design is performed for RF application of silicon nanowire (SNW) metal-oxide-semiconductor field effect transistors (MOSFETs). Both DC and AC analyses have been conducted to confirm the advantages of an SNW MOSFET over the conventional planar (CPL) MOSFET device having dimensional equivalence. Besides the intrinsic characteristic parameters, the extrinsic resistance and capacitance caused by wiring components are extracted from each device. On the basis of these intrinsic and extrinsic parameters, a multi-fingered 5.8 GHz low-noise amplifier (LNA) design adopting SNW MOSFETs has been achieved, which shows an improved gain of 17.5 dB and a noise figure of 3.1 dB over a CPL MOSFET LNA.

  12. Multiplex electrical detection of avian influenza and human immunodeficiency virus with an underlap-embedded silicon nanowire field-effect transistor.

    Science.gov (United States)

    Kim, Jee-Yeon; Ahn, Jae-Hyuk; Moon, Dong-Il; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

    2014-05-15

    The label-free electrical detection of the binding of antibodies and antigens of avian influenza (AI) and human immunodeficiency (HIV) viruses is demonstrated through an underlap-embedded silicon (Si) nanowire field-effect transistor. The proposed sensor was fabricated on a silicon bulk wafer by a top-down process. Specifically, a Si nanowire was fabricated by a combined isotropic and anisotropic patterning technique, which is one route plasma etching process. The sensor was fabricated by a self-aligned process to the gate with tilted implantation, and it allows precise control of the underlap region. This was problematic in earlier underlap field-effect transistors fabricated by a conventional gate-last process. As a sensing metric to detect the binding of a targeted antibody, the transfer characteristic change was traced. Before and after differences between the antibody binding results were caused by changes in the channel potential on the underlap region due to the charge effect arising from the biomolecules; this is also supported by a simulation. Furthermore, the multiplex detection of AI and HIV is demonstrated, showing distinctive selectivity in each case. Thus, the proposed device has inherent benefits for the label-free, electrical, and multiplex detection of biomolecules. Moreover, its processes are compatible with commercialized technology presently used to fabricate semiconductor devices. This advantage is attractive for those involved in the construction of a point-of-care testing (POCT) system on a chip involving simple, low-cost and low-risk fabrication processes of novel structures and materials.

  13. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    -catalyzed nanowire growth, and grown GaAs1−xPx nanowires with different inclusions of P(x) directly on silicon. The incorporation of P was generally higher in nanowires than for planar growth at identical P flux percentage. More interestingly, the percentage of P in the nanowire was found to be a concave function...... of the percentage of P in the flux, while for planar growth it was a convex function. We have demonstrated GaAs0.8P0.2 nanowires and further grown a shell surrounding the core with the same composition. The lattice matched GaAsP core-shell nanowire were doped to produce radial p-i-n junctions in each...... of the nanowires, some of which were removed from their growth substrate and turned into single nanowire solar cells (SNWSC). The best device showed a conversion efficiency of 6.8% under 1.5AMG 1-sun illumination. In order to improve the efficiency a surface passivating shell consisting of highly doped, wide...

  14. Wavelength Conversion of a 640 Gbit/s DPSK Nyquist Channel Using a Low-Loss Silicon Nanowire

    DEFF Research Database (Denmark)

    Ji, Hua; Hu, Hao; Ding, Yunhong;

    2015-01-01

    640 Gbit/s N-OTDM DPSK wavelength conversion is demonstrated in a Si-nanowire.All 64 tributaries are converted within an average power penalty of 1 dB at the FEC BER-limit3E-3. Only 22-fJ/bit switching energy is required...

  15. Multilevel electrochemical signal detections of metalloprotein heterolayers for bioelectronic device

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Yong-Ho; Yoo, Si-Youl; Lee, Taek [Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of); Lee, Hun Joo [Interdisciplinary Program of Integrated Biotechnology, Sogang University, 35 Baekbeomro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of); Min, Junhong [School of Integrative Engineering, Chung-Ang University, Heukseok-dong, Dongjak-gu, Seoul 156-756 (Korea, Republic of); Choi, Jeong-Woo, E-mail: jwchoi@sogang.ac.kr [Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of); Interdisciplinary Program of Integrated Biotechnology, Sogang University, 35 Baekbeomro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of)

    2014-01-31

    In the present study, we investigated the simultaneous detection of multilevel electrochemical signals from various metalloprotein heterolayers for the bioelectronic devices. A layer-by-layer assembly method based on simple electrostatic interaction was introduced to form protein bilayers. The gold substrate was modified with poly (ethylene glycol) thiol acid as the precursor, which introduced negative charges to the surface. Based on the isoelectric point, net-charge controlled metalloproteins by pH adjustment were sequentially immobilized on this negatively charged substrate. The degree of protein immobilization on the gold substrate was confirmed by surface plasmon resonance spectroscopy, and the surface topology changes due to the protein immobilization were confirmed by atomic force microscopy. Redox signals in the protein layers were measured by cyclic voltammetry. As a result, various redox signals generated from different metalloproteins on a single electrode were monitored. This proposed method for the detection of multi-level electrochemical signals can be directly applied to bioelectronic devices that store multi-information in a single electrode. - Highlights: • We fabricated heterolayers composed of various metalloproteins. • Metalloproteins were immobilized by layer-by-layer assembly. • The degree of immobilization was controlled by the net charge of metalloproteins. • Various redox signals generated from heterolayers were well monitored.

  16. Photoelectrochemistry of Semiconductor Nanowire Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  17. The use of the grey-Taguchi method for the optimization of a silicon nanowires array synthesized using electroless Ag-assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiou, Ai-Huei [National Chiao Tung University, Department of Mechanical Engineering (China); Wu, Wen-Fa [National Nano Device Laboratories (China); Chen, Ding-Yeng, E-mail: dnc@cc.hwh.edu.tw [Hwa Hsia Institute of Technology, Department of Mechanical Engineering (China); Hsu, Chun-Yao, E-mail: cyhsu@mail.lhu.edu.tw [Lunghwa University of Science and Technology, Department of Mechanical Engineering (China)

    2013-09-15

    A simple and convenient method for the production of silicon nanowires (SiNWs) that are single crystalline, well aligned and which have large area is direct synthesis onto p-type (100) silicon (Si) wafers, using electroless Ag-assisted etching, in which Ag is both the oxidant and the catalyst. This study proposes a method for the optimization of the etching process parameters for SiNW arrays with multiple performance characteristics, using grey-Taguchi analysis. The effect of the etching process parameters (etching time, solution (AgNO{sub 3}/HF) temperature, silver nitrate (AgNO{sub 3}) concentration and hydrogen fluoride (HF) concentration) on the length, diameter, structure, and morphology of the SiNW arrays were studied. In the confirmation runs, grey relational analysis shows that the length of the SiNW arrays is increased from 15.80 to 23.07 {mu}m, and the diameter is decreased from 76.77 to 66.65 nm. Further, the linear relationship for the SiNW arrays can be adjusted by increasing the etching time (from 15 to 45 min) and the solution temperature (from 25 to 75 Degree-Sign C). The axial orientation of the SiNWs is determined to be along the [001] direction, which is the same as that of the initial Si wafer. The large area SiNW arrays have potential applications in interconnect, bio-technology and optoelectronic devices.

  18. Biosensor based on a silicon nanowire field-effect transistor functionalized by gold nanoparticles for the highly sensitive determination of prostate specific antigen.

    Science.gov (United States)

    Presnova, Galina; Presnov, Denis; Krupenin, Vladimir; Grigorenko, Vitaly; Trifonov, Artem; Andreeva, Irina; Ignatenko, Olga; Egorov, Alexey; Rubtsova, Maya

    2017-02-15

    We have demonstrated label-free and real-time detection of prostate specific antigen (PSA) in human serum using silicon nanowire field effect transistors (NW FETs) with Schottky contacts (Si-Ti). The NW FETs were fabricated from SOI material using high-resolution e-beam lithography, thin film vacuum deposition and reactive-ion etching processes eliminating complicated processes of doping and thermal annealing. This allowed substantial simplifying the transistors manufacturing. A new method for covalent immobilization of half-fragments of antibodies on silicon modified by 3-glycidopropyltrimethoxysilane with thiol groups and 5nm gold nanoparticles (GNPs) was established. NW FETs functionalized by GNPs revealed extremely high pH sensitivity of 70mV/pH and enhanced electrical performance in the detection of antigen due to enhanced surface/volume ratio, favorable orientation of antibody active sites and approaching the source of the electric field close to the transistor surface. Si NWFETs were applied for quantitative detection of PSA in a buffer and human serum diluted 1/100. Response time was about 5-10s, and analysis time per sample was 1min. The limit of PSA detection was of 23fg/mL, concentration range of 23fg/mL-500ng/mL (7 orders of magnitude). The PSA concentrations determined by the NW FETs in serum were compared with well-established ELISA method. The results matched well with the correlation coefficient of 0.97.

  19. Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

    Science.gov (United States)

    Chatterjee, Sulagna; Chattopadhyay, Sanatan

    2016-10-01

    An analytical model including the simultaneous impact of lattice and thermo-elastic constant mismatch-induced stress in nanowires on Insulator-on-Silicon substrate is developed. It is used to calibrate the finite-element based software, ANSYS, which is subsequently employed to estimate process-induced stress in the sequential steps of NW-FET fabrication. The model considers crystal structures and orientations for both the nanowires and substrates. In-plane stress components along nanowire-axis are estimated for different radii and fractions of insertion. Nature of longitudinal stress is observed to change when inserted fraction of nanowires is changed. Effect of various high-k gate-dielectrics is also investigated. A longitudinal tensile stress of 2.4 GPa and compressive stress of 1.89 GPa have been obtained for NW-FETs with 1/4th and 3/4th insertions with La2O3 and TiO2 as the gate-dielectrics, respectively. Therefore, it is possible to achieve comparable values of electron and hole mobility in NW-FETs by judiciously choosing gate-dielectrics and fractional insertion of the nanowires.

  20. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    KAUST Repository

    Hazari, Arnab

    2015-11-12

    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

  1. Gas-driven ultrafast reversible switching of super-hydrophobic adhesion on palladium-coated silicon nanowires.

    Science.gov (United States)

    Seo, Jungmok; Lee, Soonil; Han, Heetak; Jung, Hwae Bong; Hong, Juree; Song, Giyoung; Cho, Suk Man; Park, Cheolmin; Lee, Wooyoung; Lee, Taeyoon

    2013-08-14

    A gas-driven ultrafast adhesion switching of water droplets on palladium-coated Si nanowire arrays is demonstrated. By regulating the gas-ambient between the atmosphere and H2 , the super-hydrophobic adhesion is repeatedly switched between water-repellent and water-adhesive. The capability of modulating the super-hydrophobic adhesion on a super-hydrophobic surface with a non-contact mode could be applicable to novel functional lab-on-a-chip platforms.

  2. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  3. Catalyst-Free Synthesis of ZnO Nanowires on Oxidized Silicon Substrate for Gas Sensing Applications.

    Science.gov (United States)

    Behera, B; Chandra, S

    2015-06-01

    In the present work, we report the synthesis of nanostructured ZnO by oxidation of zinc film without using a seed or catalyst layer. The zinc films were deposited on oxidized Si substrates by RF magnetron sputtering process. These were oxidized in dry and wet air/oxygen ambient. The optimized process yielded long nanowires of ZnO having diameter of around 60-70 nm and spread uniformly over the surface. The effect of oxidation temperature, time, Zn film thickness and the ambient has strong influence on the morphology of resulting nanostruxctured ZnO film. The films were characterized by scanning electron microscopy for morphological studies and X-ray diffraction (XRD) analysis to study the phase of the nanostructured ZnO. Room temperature photoluminescence (PL) measurements of the nanowires show UV and green emission. A sensor was designed and fabricated using nanostructured ZnO film, incorporating inter-digital-electrode (IDE) for the measurement of resistance of the sensing layer. The gas sensing properties were investigated from the measurement of change in resistance when exposed to vapours of different volatile organic compound (VOC) such as acetone, ethanol, methanol and 2-propanol. The results suggest that ZnO nanowires fabricated by this method have potential application in gas sensors.

  4. Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics

    Science.gov (United States)

    Srivastava, Sanjay K.; Kumar, Dinesh; Schmitt, S. W.; Sood, K. N.; Christiansen, S. H.; Singh, P. K.

    2014-05-01

    Vertically aligned silicon nanowire (SiNW) arrays have been fabricated over a large area using a silver-assisted single-step electroless wet chemical etching (EWCE) method, which involves the etching of silicon wafers in aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. A comprehensive systematic investigation on the influence of different parameters, such as the etching time (up to 15 h), solution temperature (10-80 °C), AgNO3 (5-200 mM) and HF (2-22 M) concentrations, and properties of the multi-crystalline silicon (mc-Si) wafers, is presented to establish a relationship of these parameters with the SiNW morphology. A linear dependence of the NW length on the etch time is obtained even at higher temperature (10-50 °C). The activation energy for the formation of SiNWs on Si(100) has been found to be equal to ˜0.51 eV . It has been shown for the first time that the surface area of the Si wafer exposed to the etching solution is an important parameter in determining the etching kinetics in the single-step process. Our results establish that single-step EWCE offers a wide range of parameters by means of which high quality vertical SiNWs can be produced in a very simple and controlled manner. A mechanism for explaining the influence of various parameters on the evolution of the NW structure is discussed. Furthermore, the SiNW arrays have extremely low reflectance (as low as <3% for Si(100) NWs and <12% for mc-Si NWs) compared to ˜35% for the polished surface in the 350-1000 nm wavelength range. The remarkably low reflection surface of SiNW arrays has great potential for use as an effective light absorber material in novel photovoltaic architectures, and other optoelectronic and photonic devices.

  5. Implementing MEMS technology for soft, (bio)electronics interfaces

    Science.gov (United States)

    Romeo, Alessia; Hofmeister, Yannick; Lacour, Stéphanie P.

    2014-06-01

    Soft, bioelectronics interfaces are broadly defined as microfabricated devices with mechanical properties suited to comply with biological tissues. There are many challenges associated with the development of such technology platforms. Simultaneously one must achieve reliable electronic performance, thermal and environmental stability, mechanical compliance, and biocompatibility. Materials and system architecture must be designed such that mechanical integrity and electrical functionality is preserved during fabrication, implementation and use of the interface. Depositing and patterning conventional device materials, ranging from inorganic to organic thin films as well as nanomaterials, directly onto soft elastomeric substrates enable electronic devices with enhanced mechanical flexibility. Success in fabrication also relies on a careful design of the mechanical architecture of the soft interface to minimize mechanical stresses in the most fragile materials.

  6. Olfactory Mucosa Tissue Based Biosensor for Bioelectronic Nose

    Science.gov (United States)

    Liu, Qingjun; Ye, Weiwei; Yu, Hui; Hu, Ning; Cai, Hua; Wang, Ping

    2009-05-01

    Biological olfactory system can distinguish thousands of odors. In order to realize the biomimetic design of electronic nose on the principle of mammalian olfactory system, we have reported bioelectronic nose based on cultured olfactory cells. In this study, the electrical property of the tissue-semiconductor interface was analyzed by the volume conductor theory and the sheet conductor model. Olfactory mucosa tissue of rat was isolated and fixed on the surface of the light-addressable potentiometric sensor (LAPS), with the natural stations of the neuronal populations and functional receptor unit of the cilia well reserved. By the extracellular potentials of the olfactory receptor cells of the mucosa tissue monitored, both the simulation and the experimental results suggested that this tissue-semiconductor hybrid system was sensitive to odorants stimulation.

  7. 3D hydrogel scaffold doped with 2D graphene materials for biosensors and bioelectronics.

    Science.gov (United States)

    Song, Hyun Seok; Kwon, Oh Seok; Kim, Jae-Hong; Conde, João; Artzi, Natalie

    2017-03-15

    Hydrogels consisting of three-dimensional (3D) polymeric networks have found a wide range of applications in biotechnology due to their large water capacity, high biocompatibility, and facile functional versatility. The hydrogels with stimulus-responsive swelling properties have been particularly instrumental to realizing signal transduction in biosensors and bioelectronics. Graphenes are two-dimensional (2D) nanomaterials with unprecedented physical, optical, and electronic properties and have also found many applications in biosensors and bioelectronics. These two classes of materials present complementary strengths and limitations which, when effectively coupled, can result in significant synergism in their electrical, mechanical, and biocompatible properties. This report reviews recent advances made with hydrogel and graphene materials for the development of high-performance bioelectronics devices. The report focuses on the interesting intersection of these materials wherein 2D graphenes are hybridized with 3D hydrogels to develop the next generation biosensors and bioelectronics.

  8. Investigation of anti-reflection properties of crystalline silicon solar cell surface silicon nanowire arrays∗%晶体硅太阳电池表面纳米线阵列减反射特性研究

    Institute of Scientific and Technical Information of China (English)

    梁磊†; 徐琴芳; 忽满利; 孙浩; 向光华; 周利斌

    2013-01-01

      为增强晶体硅太阳电池的光利用率,提高光电转换效率,研究了硅纳米线阵列的光学散射性质.运用严格耦合波理论对硅纳米线阵列在310—1127 nm波段的反射率进行了模拟计算,用田口方法对硅纳米线阵列的表面传输效率进行了优化.结果表明,当硅纳米线阵列的周期为50 nm,占空比为0.6,高度约1000 nm时减反射效果最佳;该结构在上述波段的平均反射率约为2%,且在较大入射角度范围保持不变.采用金属催化化学腐蚀法,于室温、室压条件下在单晶硅表面制备周期为60 nm,占空比为0.53,高度为500 nm的硅纳米线阵列结构,其反射率的实验测试结果与计算模拟值相符,在上述波段的平均反射率为4%—5%,相对于单晶硅35%左右的反射率,减反射效果明显.这种减反射微结构能够在降低太阳电池成本的同时有效减小单晶硅表面的光反射损失,提高光电转换效率.%In order to trap more sunlight onto the crystalline silicon solar cell and improve the photo-electric conversion efficiency, it is very important to study the optical scattering properties of silicon nanowire arrays on silicon wafer. The rigorous coupled wave analysis method is used for optical simulation, and the Taguchi method is used for efficient optimization. The simulation results show that at the above-mentioned wavelengths the reflectance of the optimized structure is less than 2%, and also able to achieve the wide-angle antireflection. At room temperature and ambient pressure, the silicon nanowire arrays each with a period of 50 nm, duty ratio of 0.6 and height of 1000 nm are successfully prepared on mono-crystalline Si wafers using a novel metal-catalyzed chemical etching technique, the reflectance test results are consistent with simulation values. The average reflectance of the optimized structure over the above-mentioned wavelength range is 4%–5%, showing that the antireflection effect is obvious

  9. Efficiency Enhancement Mechanism for Poly(3, 4-ethylenedioxythiophene):Poly(styrenesulfonate)/Silicon Nanowires Hybrid Solar Cells Using Alkali Treatment

    Science.gov (United States)

    Jiang, Yurong; Gong, Xiu; Qin, Ruiping; Liu, Hairui; Xia, Congxin; Ma, Heng

    2016-05-01

    The efficiency enhancement mechanism of the alkali-treated Si nanowire (SiNW) solar cells is discussed and analyzed in detail, which is important to control the useful photovoltaic process. All the results demonstrate that the photovoltaic performance enhancement of alkali-treated SiNW device steps from the formation of the good core-shell heterojunction, which consequently enhances the junction area, promotes fast separating and transporting of electron and hole pairs, and reduces the carrier surface combination. It also indicates that alkali treatment for SiNWs is a promising processing as an economical method for the formation of good core-shell SiNW/polymer heterojunction.

  10. Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates

    KAUST Repository

    Janjua, Bilal

    2017-01-18

    Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm (80 mA in 0.5 × 0.5 mm device), a turn-on voltage of ∼5.5 V and droop-free behavior up to 120 A/cm of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.

  11. Controlled Synthesis of Si Nanowire Arrays through Metal Assisted Silicon Chemical Etching%金属援助硅化学刻蚀法可控制备硅纳米线阵列

    Institute of Scientific and Technical Information of China (English)

    吕文辉; 张帅

    2011-01-01

    A reasonable method is developed for synthesis of Si nanowire(SiNW) arrays with controlled morphology on the basis of the mechanism of metal-assisted silicon chemical etching. In this method, SiNW arrays have been synthesized by metal (a discontiguous Ag thin film) assisted silicon chemical etching and the morphology of the arrays is controlled by the structure of discontiguous Ag thin film and Si chemical etching time. Detailed scanning electron microscopy(SEM) observations demonstrate that the array density depends on morphology of the Ag thin film and the array height depends on the etching time. The investigation results provid a simple and efficient way to controllable preparation of silicon nanowire arrays for various nano-electron devices, such as silicon nanowire solar cells.%基于金属援助硅化学刻蚀机理,成功地发展了一种形貌可控地制备硅纳米线阵列的有效方法.在该方法中,通过银纳米颗粒催化层的微结构和硅化学刻蚀的时间来调控硅纳米线阵列的形貌.扫描电子显微镜(SEM)形貌表征的实验结果证实:硅纳米线阵列的孔隙率依赖银纳米颗粒催化层的微结构,硅纳米线阵列的高度依赖于硅的刻蚀时间.这种形貌可控地制备单晶硅纳米线阵列的方法简单、有效,可用于构筑硅纳米线光伏电池等各种硅基纳米电子器件.

  12. A self-heated silicon nanowire array: selective surface modification with catalytic nanoparticles by nanoscale Joule heating and its gas sensing applications.

    Science.gov (United States)

    Yun, Jeonghoon; Jin, Chun Yan; Ahn, Jae-Hyuk; Jeon, Seokwoo; Park, Inkyu

    2013-08-07

    We demonstrated novel methods for selective surface modification of silicon nanowire (SiNW) devices with catalytic metal nanoparticles by nanoscale Joule heating and local chemical reaction. The Joule heating of a SiNW generated a localized heat along the SiNW and produced endothermic reactions such as hydrothermal synthesis of nanoparticles or thermal decomposition of polymer thin films. In the first method, palladium (Pd) nanoparticles could be selectively synthesized and directly coated on a SiNW by the reduction of the Pd precursor via Joule heating of the SiNW. In the second method, a sequential process composed of thermal decomposition of a polymer, evaporation of a Pd thin film, and a lift-off process was utilized. The selective decoration of Pd nanoparticles on SiNW was successfully accomplished by using both methods. Finally, we demonstrated the applications of SiNWs decorated with Pd nanoparticles as hydrogen detectors. We also investigated the effect of self-heating of the SiNW sensor on its sensing performance.

  13. High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability

    Science.gov (United States)

    Krause, Andreas; Dörfler, Susanne; Piwko, Markus; Wisser, Florian M.; Jaumann, Tony; Ahrens, Eike; Giebeler, Lars; Althues, Holger; Schädlich, Stefan; Grothe, Julia; Jeffery, Andrea; Grube, Matthias; Brückner, Jan; Martin, Jan; Eckert, Jürgen; Kaskel, Stefan; Mikolajick, Thomas; Weber, Walter M.

    2016-06-01

    We show full Li/S cells with the use of balanced and high capacity electrodes to address high power electro-mobile applications. The anode is made of an assembly comprising of silicon nanowires as active material densely and conformally grown on a 3D carbon mesh as a light-weight current collector, offering extremely high areal capacity for reversible Li storage of up to 9 mAh/cm2. The dense growth is guaranteed by a versatile Au precursor developed for homogenous Au layer deposition on 3D substrates. In contrast to metallic Li, the presented system exhibits superior characteristics as an anode in Li/S batteries such as safe operation, long cycle life and easy handling. These anodes are combined with high area density S/C composite cathodes into a Li/S full-cell with an ether- and lithium triflate-based electrolyte for high ionic conductivity. The result is a highly cyclable full-cell with an areal capacity of 2.3 mAh/cm2, a cyclability surpassing 450 cycles and capacity retention of 80% after 150 cycles (capacity loss <0.4% per cycle). A detailed physical and electrochemical investigation of the SiNW Li/S full-cell including in-operando synchrotron X-ray diffraction measurements reveals that the lower degradation is due to a lower self-reduction of polysulfides after continuous charging/discharging.

  14. ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature.

    Science.gov (United States)

    Liao, Jiecui; Li, Zhengcao; Wang, Guojing; Chen, Chienhua; Lv, Shasha; Li, Mingyang

    2016-02-14

    ZnO nanorod/porous silicon nanowire (ZnO/PSiNW) hybrids with three different structures as highly sensitive NO2 gas sensors were obtained. PSiNWs were first synthesized by metal-assisted chemical etching, and then seeded in three different ways. After that ZnO nanorods were grown on the seeded surface of PSiNWs using a hydrothermal procedure. ZnO/PSiNW hybrids showed excellent gas sensing performance for various NO2 concentrations (5-50 ppm) at room temperature, and the electrical resistance change rate reached as high as 35.1% when responding to 50 ppm NO2. The distinct enhancement was mainly attributed to the faster carrier transportation after combination, the increase in gas sensing areas and the oxygen vacancy (VO) concentration. Moreover, the p-type gas sensing behavior was explained by the gas sensing mechanism and the effect of VO concentration on gas sensing properties was also discussed concerning the photoluminescence (PL) spectra performance.

  15. Isolation and Identification of Post-Transcriptional Gene Silencing-Related Micro-RNAs by Functionalized Silicon Nanowire Field-effect Transistor

    Science.gov (United States)

    Chen, Kuan-I.; Pan, Chien-Yuan; Li, Keng-Hui; Huang, Ying-Chih; Lu, Chia-Wei; Tang, Chuan-Yi; Su, Ya-Wen; Tseng, Ling-Wei; Tseng, Kun-Chang; Lin, Chi-Yun; Chen, Chii-Dong; Lin, Shih-Shun; Chen, Yit-Tsong

    2015-11-01

    Many transcribed RNAs are non-coding RNAs, including microRNAs (miRNAs), which bind to complementary sequences on messenger RNAs to regulate the translation efficacy. Therefore, identifying the miRNAs expressed in cells/organisms aids in understanding genetic control in cells/organisms. In this report, we determined the binding of oligonucleotides to a receptor-modified silicon nanowire field-effect transistor (SiNW-FET) by monitoring the changes in conductance of the SiNW-FET. We first modified a SiNW-FET with a DNA probe to directly and selectively detect the complementary miRNA in cell lysates. This SiNW-FET device has 7-fold higher sensitivity than reverse transcription-quantitative polymerase chain reaction in detecting the corresponding miRNA. Next, we anchored viral p19 proteins, which bind the double-strand small RNAs (ds-sRNAs), on the SiNW-FET. By perfusing the device with synthesized ds-sRNAs of different pairing statuses, the dissociation constants revealed that the nucleotides at the 3‧-overhangs and pairings at the terminus are important for the interactions. After perfusing the total RNA mixture extracted from Nicotiana benthamiana across the device, this device could enrich the ds-sRNAs for sequence analysis. Finally, this bionanoelectronic SiNW-FET, which is able to isolate and identify the interacting protein-RNA, adds an additional tool in genomic technology for the future study of direct biomolecular interactions.

  16. Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

    Science.gov (United States)

    Yu, Eunseon; Cho, Seongjae

    2016-11-01

    In this work, a nanowire p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) coaxially having a Si core and a Ge peripheral channel is designed and characterized by device simulations. Owing to the high hole mobility of Ge, the device can be utilized for high-speed CMOS integrated circuits, with the effective confinement of mobile holes in Ge by the large valence band offset between Si and Ge. Source/drain doping concentrations and the ratio between the Si core and Ge channel thicknesses are determined. On the basis of the design results, the channel length is aggressively scaled down by evaluating the primary DC parameters in order to confirm device scalability and low-power applicability in sub-10-nm technology nodes.

  17. The effect of the nanowire shape on the optical absorption of the silicon nanowire film solar cells%硅薄膜太阳能电池中硅纳米线形状对光吸收率的影响

    Institute of Scientific and Technical Information of China (English)

    黄海华; 张卫平; 肖钰斐; 庞霖

    2013-01-01

      为了研究硅薄膜太阳能电池中硅纳米线阵列的光吸收率,利用耦合波分析理论(RCWA),分别研究了按正方形排列的柱形、锥形、柱锥形间隔等3种形状硅纳米线阵列对光吸收率的影响。通过改变3种形状硅纳米线阵列的周期、占空比,分别计算其对应的光吸收率,从中优化得到吸收效率最佳的硅纳米线结构参数,并通过光吸收效率η对硅纳米线结构的光吸收率进行定量分析。结果表明,在一定范围内适当增大硅纳米线结构的周期和占空比,能使得吸收率曲线往长波段处移动,并能有效地增加其光吸收效率η;不同硅纳米线形状获得最大吸收效率时对应的结构参数也不同;3种形状硅纳米线阵列中以锥形硅纳米线的光吸收率最佳。%To study the absorption of the silicon nanowire ( SiNW) arrays for silicon thin film solar cells ,the RCWA was used to simulate the optical absorption of the SiNW arrays , whose cross section varies from cylindrical to conical shapes .The absorption was calculated in terms of the period and the duty ratio of the SiNW arrays .Optimization of these two parameters was conducted in order to a-chieve the maximal absorption within solar absorption spectral range by evaluating the ultimate effi -ciency .The results indicate that the absorption bandwidth significantly shifts toward the long -wave region when the nanowire period and duty ratio increase ,the ultimate efficiency could be enhanced effectively with the increase of the SiNW period and duty ratio within certain extents .The shape of the nanowire also plays an important role in determining the maximal absorption .Cone silicon nanowires were found to have the maximal absorption in the three kinds of silicon nanowire shapes .

  18. Organic mixed conductors for bioelectronic applications (Conference Presentation)

    Science.gov (United States)

    Rivnay, Jonathan

    2016-09-01

    Direct measurement and stimulation of electrophysiological activity is a staple of neural and cardiac health monitoring, diagnosis and/or therapy. The ability to sensitively detect these signals can be enhanced by organic electronic materials that show mixed conduction properties (both electronic and ionic transport) in order to bridge the inherent mismatch that is prevalent between biological systems and traditional microelectronic materials/devices. Organic electrochemical transistors (OECTs) are one class of devices that utilize organic mixed conductors as the transistor channel, and have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance. These devices are fabricated in flexible, conformable form factors for in vivo recordings of epileptic activity, and for cutaneous EEG and ECG recordings in human subjects. The majority of high performance devices are based on conducting polymers such as poly(3,4-ethylenedioxythiophene) :poly(styrenesulfonate), PEDOT:PSS. By investigating PEDOT-based materials and devices, we are able to construct design rules for new formulations/materials. Introducing glycolated side chains to carefully selected semiconducting polymer backbones has enabled a new class high performance bioelectronic materials that feature high volumetric capacitance, transconductance >10mS (device dimensions ca. 10um), and steep subthreshold switching characteristics. A sub-set of these materials outperform PEDOT:PSS and shows significant promise for low power in vitro and in vivo biosensing applications.

  19. Synthesis of graphene and related two-dimensional materials for bioelectronics devices.

    Science.gov (United States)

    Zhang, Tao; Liu, Jilun; Wang, Cheng; Leng, Xuanye; Xiao, Yao; Fu, Lei

    2017-03-15

    In recent years, graphene and related two-dimensional (2D) materials have emerged as exotic materials in nearly every fields of fundamental science and applied engineering. The latest progress has shown that these 2D materials could have a profound impact on bioelectronics devices. For the construction of these bioelectronics devices, these 2D materials were generally synthesized by the processes of exfoliation and chemical vapor deposition. In particular, the macrostructures of these 2D materials have also been realized by these two processes, which have shown great potentials in the self-supported and special-purpose biosensors. Due to the high specific surface area, subtle electron properties, abundant surface atoms of these 2D materials, the as-constructed bioelectronics devices have exhibited enhanced performance in the sensing of small biomolecules, heavy metals, pH, protein and DNA. The aim of this review article is to provide a comprehensive scientific progress in the synthesis of 2D materials for the construction of five typical bioelectronics devices (electrochemical biosensors, FET-based biosensors, piezoelectric devices, electrochemiluminescence devices and supercapacitors) and to overview the present status and future perspective of the applications of these bioelectronics devices based on 2D materials.

  20. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  1. Design and function of molecular and bioelectronics devices.

    Science.gov (United States)

    Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

    2007-10-24

    Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers

  2. EDITORIAL: Design and function of molecular and bioelectronics devices

    Science.gov (United States)

    Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

    2007-10-01

    Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers

  3. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina;

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...

  4. Molecular precursor derived silicon boron carbonitride/carbon nanotube and silicon oxycarbide/carbon nanotube composite nanowires for energy based applications

    Science.gov (United States)

    Bhandavat, Romil

    Molecular precursor derived ceramics (also known as polymer-derived ceramics or PDCs) are high temperature glasses that have been studied for applications involving operation at elevated temperatures. Prepared from controlled thermal degradation of liquid-phase organosilicon precursors, these ceramics offer remarkable engineering properties such as resistance to crystallization up to 1400 °C, semiconductor behavior at high temperatures and intense photoluminescence. These properties are a direct result of their covalent bonded amorphous network and free (-sp2) carbon along with mixed Si/B/C/N/O bonds, which otherwise can not be obtained through conventional ceramic processing techniques. This thesis demonstrates synthesis of a unique core/shell type nanowire structure involving either siliconboroncarbonitride (SiBCN) or siliconoxycarbide (SiOC) as the shell with carbon nanotube (CNT) acting as the core. This was made possible by liquid phase functionalization of CNT surfaces with respective polymeric precursor (e.g., home-made boron-modified polyureamethylvinylsilazane for SiBCN/CNT and commercially obtained polysiloxane for SiOC/CNT), followed by controlled pyrolysis in inert conditions. This unique architecture has several benefits such as high temperature oxidation resistance (provided by the ceramic shell), improved electrical conductivity and mechanical toughness (attributed to the CNT core) that allowed us to explore its use in energy conversion and storage devices. The first application involved use of SiBCN/CNT composite as a high temperature radiation absorbant material for laser thermal calorimeter. SiBCN/CNT spray coatings on copper substrate were exposed to high energy laser beams (continuous wave at 10.6 mum 2.5 kW CO2 laser, 10 seconds) and resulting change in its microstructure was studied ex-situ. With the aid of multiple techniques we ascertained the thermal damage resistance to be 15 kW/cm -2 with optical absorbance exceeding 97%. This represents

  5. Investigation of Optical Properties of Silicon Solar Cell Surface Silicon Nanowire Arrays%硅太阳能电池表面纳米线阵列的光学特性研究

    Institute of Scientific and Technical Information of China (English)

    黄晓刚; 王进; 高慧芳; 张启

    2016-01-01

    为增强晶体硅太阳能电池的光利用率,提高光电转换效率,研究了硅纳米线(Silicon nanowires,SiNWs)阵列的光学特性.首先运用时域有限差分(Finite-Difference Time-Domain,FDTD)方法对硅纳米线阵列在300~1100 nm波段的吸收率进行了模拟计算,并对硅纳米线阵列的光吸收效率进行了优化计算.结果表明,当硅纳米线阵列的周期为600 nm,填充比为0.7时硅纳米线阵列的光吸收效率最大,可达32.93%.然后采用金属催化化学刻蚀(Metal Assisted Chemical Etching,MACE)的方法,于室温、室压条件下在单晶硅表面制备了不同结构的硅纳米线阵列,并测试了其反射率R,并对实验结果进行了分析,表明硅纳米线阵列相对于单晶硅薄膜,其减反射增强吸收的效果明显.因此,在硅表面制备这种具有特殊形貌的微结构不仅能降低太阳电池的制造成本,同时还能大幅降低晶体硅表面的光反射,增强光吸收,提高电池的光电转换效率.

  6. Silicon based ultrafast optical waveform sampling

    DEFF Research Database (Denmark)

    Ji, Hua; Galili, Michael; Pu, Minhao

    2010-01-01

    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode-locker...

  7. Tunneling magnetoresistance in Si nanowires

    Science.gov (United States)

    Montes, E.; Rungger, I.; Sanvito, S.; Schwingenschlögl, U.

    2016-11-01

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green’s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  8. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  9. Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors

    Directory of Open Access Journals (Sweden)

    Jiahong Zhang

    2016-10-01

    Full Text Available In order to meet the requirement of high sensitivity and signal-to-noise ratios (SNR, this study develops and optimizes a piezoresistive pressure sensor by using double silicon nanowire (SiNW as the piezoresistive sensing element. First of all, ANSYS finite element method and voltage noise models are adopted to optimize the sensor size and the sensor output (such as sensitivity, voltage noise and SNR. As a result, the sensor of the released double SiNW has 1.2 times more sensitivity than that of single SiNW sensor, which is consistent with the experimental result. Our result also displays that both the sensitivity and SNR are closely related to the geometry parameters of SiNW and its doping concentration. To achieve high performance, a p-type implantation of 5 × 1018 cm−3 and geometry of 10 µm long SiNW piezoresistor of 1400 nm × 100 nm cross area and 6 µm thick diaphragm of 200 µm × 200 µm are required. Then, the proposed SiNW pressure sensor is fabricated by using the standard complementary metal-oxide-semiconductor (CMOS lithography process as well as wet-etch release process. This SiNW pressure sensor produces a change in the voltage output when the external pressure is applied. The involved experimental results show that the pressure sensor has a high sensitivity of 495 mV/V·MPa in the range of 0–100 kPa. Nevertheless, the performance of the pressure sensor is influenced by the temperature drift. Finally, for the sake of obtaining accurate and complete information over wide temperature and pressure ranges, the data fusion technique is proposed based on the back-propagation (BP neural network, which is improved by the particle swarm optimization (PSO algorithm. The particle swarm optimization–back-propagation (PSO–BP model is implemented in hardware using a 32-bit STMicroelectronics (STM32 microcontroller. The results of calibration and test experiments clearly prove that the PSO–BP neural network can be effectively applied

  10. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.

    Science.gov (United States)

    Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi; Siusys, Aloyzas; Zaleszczyk, Wojciech; Wojciechowski, Tomasz; Morhange, Jean-François; Altintaş, Abdulmenaf; Xu, H Q; Szuszkiewicz, Wojciech

    2013-08-21

    Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn(2+) acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

  11. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  12. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  13. Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

    Science.gov (United States)

    Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

    2016-08-01

    Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir-Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

  14. Nanowire Lasers

    OpenAIRE

    Couteau C.; Larrue A.; Wilhelm C.; Soci C.

    2015-01-01

    We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D) nature, fl...

  15. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo

    2014-11-15

    Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.

  16. Surface Coating Constraint Induced Anisotropic Swelling of Silicon in Si-Void@SiO x Nanowire Anode for Lithium-Ion Batteries.

    Science.gov (United States)

    Liu, Qian; Cui, Zhe; Zou, Rujia; Zhang, Jianhua; Xu, Kaibing; Hu, Junqing

    2017-01-25

    Here a simple and an environmentally friendly approach is developed for the fabrication of Si-void@SiOx nanowires of a high-capacity Li-ion anode material. The outer surface of the robust SiOx backbone and the inside void structure in Si-void@SiOx nanowires appropriately suppress the volume expansion and lead to anisotropic swelling morphologies of Si nanowires during lithiation/delithiation, which is first demonstrated by the in situ lithiation process. Remarkably, the Si-void@SiOx nanowire electrode exhibits excellent overall lithium-storage performance, including high specific capacity, high rate property, and excellent cycling stability. A reversible capacity of 1981 mAh g(-1) is obtained in the fourth cycle, and the capacity is maintained at 2197 mAh g(-1) after 200 cycles at a current density of 0.5 C. The outstanding overall properties of the Si-void@SiOx nanowire composite make it a promising anode material of lithium-ion batteries for the power-intensive energy storage applications.

  17. Recent Advances in Flexible and Stretchable Bio-Electronic Devices Integrated with Nanomaterials.

    Science.gov (United States)

    Choi, Suji; Lee, Hyunjae; Ghaffari, Roozbeh; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-06-01

    Flexible and stretchable electronics and optoelectronics configured in soft, water resistant formats uniquely address seminal challenges in biomedicine. Over the past decade, there has been enormous progress in the materials, designs, and manufacturing processes for flexible/stretchable system subcomponents, including transistors, amplifiers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy storage elements, and bare die integrated circuits. Nanomaterials prepared using top-down processing approaches and synthesis-based bottom-up methods have helped resolve the intrinsic mechanical mismatch between rigid/planar devices and soft/curvilinear biological structures, thereby enabling a broad range of non-invasive, minimally invasive, and implantable systems to address challenges in biomedicine. Integration of therapeutic functional nanomaterials with soft bioelectronics demonstrates therapeutics in combination with unconventional diagnostics capabilities. Recent advances in soft materials, devices, and integrated systems are reviewes, with representative examples that highlight the utility of soft bioelectronics for advanced medical diagnostics and therapies.

  18. Random access actuation of nanowire grid metamaterial

    Science.gov (United States)

    Cencillo-Abad, Pablo; Ou, Jun-Yu; Plum, Eric; Valente, João; Zheludev, Nikolay I.

    2016-12-01

    While metamaterials offer engineered static optical properties, future artificial media with dynamic random-access control over shape and position of meta-molecules will provide arbitrary control of light propagation. The simplest example of such a reconfigurable metamaterial is a nanowire grid metasurface with subwavelength wire spacing. Recently we demonstrated computationally that such a metadevice with individually controlled wire positions could be used as dynamic diffraction grating, beam steering module and tunable focusing element. Here we report on the nanomembrane realization of such a nanowire grid metasurface constructed from individually addressable plasmonic chevron nanowires with a 230 nm × 100 nm cross-section, which consist of gold and silicon nitride. The active structure of the metadevice consists of 15 nanowires each 18 μm long and is fabricated by a combination of electron beam lithography and ion beam milling. It is packaged as a microchip device where the nanowires can be individually actuated by control currents via differential thermal expansion.

  19. Bioelectronic tongues: New trends and applications in water and food analysis.

    Science.gov (United States)

    Cetó, Xavier; Voelcker, Nicolas H; Prieto-Simón, Beatriz

    2016-05-15

    Over the last years, there has been an increasing demand for fast, highly sensitive and selective methods of analysis to meet new challenges in environmental monitoring, food safety and public health. In response to this demand, biosensors have arisen as a promising tool, which offers accurate chemical data in a timely and cost-effective manner. However, the difficulty to obtain sensors with appropriate selectivity and sensitivity for a given analyte, and to solve analytical problems which do not require the quantification of a certain analyte, but an overall effect on a biological system (e.g. toxicity, quality indices, provenance, freshness, etc.), led to the concept of electronic tongues as a new strategy to tackle these problems. In this direction, to improve the performance of electronic tongues, and thus to spawn new application fields, biosensors have recently been incorporated to electronic tongue arrays, leading to what is known as bioelectronic tongues. Bioelectronic tongues provide superior performance by combining the capabilities of electronic tongues to derive meaning from complex or imprecise data, and the high selectivity and specificity of biosensors. The result is postulated as a tool that exploits chemometrics to solve biosensors' interference problems, and biosensors to solve electronic tongues' selectivity problems. The review presented herein aims to illustrate the capabilities of bioelectronic tongues as analytical tools, especially suited for screening analysis, with particular emphasis in water analysis and the characterization of food and beverages. After briefly reviewing the key concepts related to the design and principles of electronic tongues, we provide an overview of significant contributions to the field of bioelectronic tongues and their future perspectives.

  20. Production of semiconducting gold-DNA nanowires by application of DC bias.

    Science.gov (United States)

    Joshi, Rakesh K; West, Leigh; Kumar, Amrita; Joshi, Nidhi; Alwarappan, Subbiah; Kumar, Ashok

    2010-05-07

    There is considerable interest in using DNA nanowires or nanotubes in a wide variety of bioelectronic applications and microcircuitry. Various methods have been developed to construct DNA nanostructures. Here, we report a novel method to construct semiconducting DNA nanowires by applying a suitable DC bias to a gold plating solution containing double-stranded DNA. The self-assembled nanowires fabricated by this method contain attached gold nanoparticles. Further, we report that the dimensions of the nanowires can be easily manipulated by altering the applied DC bias. We also confirmed the semiconducting nature of the DNA nanowires by studying their resistance-temperature behavior from 25 to 65 degrees C in a microelectrode system. These studies describe a simple process by which gold-decorated, semiconducting DNA nanowires could be created and may lead to a breakthrough in the field of self-assembly of nanometer-scale circuits. The self-assembled structures do have some similarity with tube-like structures but in the present work we are using the term 'DNA nanowires' to define the structures.