WorldWideScience

Sample records for bioelectronic silicon nanowire

  1. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  2. Nano-Bioelectronics.

    Science.gov (United States)

    Zhang, Anqi; Lieber, Charles M

    2016-01-13

    Nano-bioelectronics represents a rapidly expanding interdisciplinary field that combines nanomaterials with biology and electronics and, in so doing, offers the potential to overcome existing challenges in bioelectronics. In particular, shrinking electronic transducer dimensions to the nanoscale and making their properties appear more biological can yield significant improvements in the sensitivity and biocompatibility and thereby open up opportunities in fundamental biology and healthcare. This review emphasizes recent advances in nano-bioelectronics enabled with semiconductor nanostructures, including silicon nanowires, carbon nanotubes, and graphene. First, the synthesis and electrical properties of these nanomaterials are discussed in the context of bioelectronics. Second, affinity-based nano-bioelectronic sensors for highly sensitive analysis of biomolecules are reviewed. In these studies, semiconductor nanostructures as transistor-based biosensors are discussed from fundamental device behavior through sensing applications and future challenges. Third, the complex interface between nanoelectronics and living biological systems, from single cells to live animals, is reviewed. This discussion focuses on representative advances in electrophysiology enabled using semiconductor nanostructures and their nanoelectronic devices for cellular measurements through emerging work where arrays of nanoelectronic devices are incorporated within three-dimensional cell networks that define synthetic and natural tissues. Last, some challenges and exciting future opportunities are discussed. PMID:26691648

  3. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  4. Gallium-Catalyzed Silicon Oxide Nanowire Growth

    Institute of Scientific and Technical Information of China (English)

    Zheng Wei Pan; Sheng Dai; Douglas H.Lowndes

    2005-01-01

    Silicon oxide nanowires tend to assemble into various complex morphologies through a metalcatalyzed vapor-liquid-solid (VLS) growth process. This article summarizes our recent efforts in the controlled growth of silicon oxide nanowire assemblies by using molten gallium as the catalyst and silicon wafer,SiO powder, or silane (SiH4) as the silicon sources. Silicon oxide nanowire assemblies with morphologies of carrotlike, cometlike, gourdlike, spindlelike, badmintonlike, sandwichlike, etc. were obtained. Although the morphologies of the nanowire assemblies are temperature- and silicon source-dependent, they share similar structural and compositional features: all the assemblies contain a microscale spherical liquid Ga ball and a highly aligned, closely packed amorphous silicon oxide nanowire bunch. The Ga-catalyzed silicon oxide nanowire growth reveals several interesting new nanowire growth phenomena that expand our knowledge of the conventional VLS nanowire growth mechanism.

  5. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  6. Silicon carbide nanowires synthesized with phenolic resin and silicon powders

    Science.gov (United States)

    Zhao, Hongsheng; Shi, Limin; Li, Ziqiang; Tang, Chunhe

    2009-02-01

    Large-scale silicon carbide nanowires with the lengths up to several millimeters were synthesized by a coat-mix, moulding, carbonization, and high-temperature sintering process, using silicon powder and phenolic resin as the starting materials. Ordinary SiC nanowires, bamboo-like SiC nanowires, and spindle SiC nanochains are found in the fabricated samples. The ordinary SiC nanowire is a single-crystal SiC phase with a fringe spacing of 0.252 nm along the [1 1 1] growth direction. Both of the bamboo-like SiC nanowires and spindle SiC nanochains exhibit uniform periodic structures. The bamboo-like SiC nanowires consist of amorphous stem and single-crystal knots, while the spindle SiC nanochains consist of uniform spindles which grow uniformly on the entire nanowires.

  7. Printed Bioelectronics

    OpenAIRE

    Turner, Anthony

    2013-01-01

    Printed Bioelectronics   Anthony P. F. Turner   Biosensors and Bioelectronics Centre, IFM, Linköping University, Linköping S-58183, Sweden.      www.ifm.liu.se/biosensors     This lecture will consider how the recent emergence of printed bioelectronics can offer new solutions to distributed diagnostics for the maintenance of wellbeing, management of an ageing population, food security and environmental safety.   The adaptation of screen printing for the production of enzy...

  8. Mechanical properties of Silicon Carbide Nanowires

    Science.gov (United States)

    Alkhateeb, Abdullah; Zhang, Daqing; McIlroy, David; Aston, David Eric

    2004-05-01

    Silicon carbide nanowires could be potentially useful for high strength materials which lead to the interest in understanding their mechanical properties. In this report we use the digital pulse force microscopy to analyze the mechanical properties of SiC nanowires .Stiffness and adhesion images of SiC nanowires on silicon grating were obtained and calibrated force-distance curves were plotted along the wire which spans on a 1.5 micron trench. Moreover, spring constant and Young's modules have been calculated from the linear part of the force-distance curves.

  9. Synthesis of silicon and germanium nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

    2007-11-01

    The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

  10. Superconductive silicon nanowires using gallium beam lithography.

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  11. Silicon nanowire properties from theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Scheel, H.M.

    2007-09-10

    Silicon has played an outstanding role at the end of the 20th century and is still one of the most important components for micro computing. In recent years the ability to miniaturize semiconductor structures and devices to nanometer length scales has opened an all new field of physics, i.e. nanoscience. Simply by miniaturizing the size of semiconducting structures the physics describing electronic or vibronic properties has to be altered fundamentally leading to new phenomena and interesting effects. For silicon the two major mile-stones where the fabrication of porous silicon and later the fabrication of free-standing silicon nanowires. The intense research concerning the fabrication of silicon nanowires has led to single crystalline nanowires with diameters of only a few nanometers. The hope that drove these intense research efforts where to find efficient photonic properties in these quantized systems. In the first part of this work detailed theoretical investigations are presented for the commonly observed ([111] and [11 anti 2]) representatives of free-standing and for the most frequently discussed ([001]) silicon nanowires not (so far) observed as free standing wires. Using density functional theory in the local density approximation the electronic properties as well as the structural changes due to the reduced dimensionality of silicon nanowires are calculated and discussed. The comparison to recent experimental, scanning tunneling experiments reveal a fundamental discrepancy between the calculated band structures and experimental findings. With our results we are able to explain these differences. Raman investigations on silicon nanowires where in a state of controversial discussion about the origin of observed red shifted spectra. Various contributions like quantum confinement, photo excitation and thermal effects where discussed. The second part of this thesis contributes to this discussion, with detailed laser power dependent Raman spectroscopic

  12. Thermal stability of silicon nanowires:atomistic simulation study

    Institute of Scientific and Technical Information of China (English)

    Liu Wen-Liang; Zhang Kai-Wang; Zhong Jian-Xin

    2009-01-01

    Using the Stillinger-Weber (SW) potential model, we investigate the thermal stability of pristine silicon nanowires based on classical molecular dynamics (MD) simulations. We explore the structural evolutions and the Lindemann indices of silicon nanowires at different temperatures in order to unveil atomic-level melting behaviour of silicon nanowires.The simulation results show that silicon nanowires with surface reconstructions have higher thermal stability than those without surface reconstructions, and that silicon nanowires with perpendicular dimmer rows on the two (100) surfaces have somewhat higher thermal stability than nanowires with parallel dimmer rows on the two (100) surfaces. Furthermore, the melting temperature of silicon nanowires increases as their diameter increases and reaches a saturation value close to the melting temperature of bulk silicon. The value of the Lindemann index for melting silicon nanowires is 0.037.

  13. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher;

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  14. Abnormal Raman spectral phenomenon of silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The Raman spectra of two one-dimensional silicon nanowire samples with different excitation wavelengths were measured and an abnormal phenomenon was discovered that the Raman spectral features change with the wavelengths of excitation. Closer analysis of the crystalline structure of samples and the changes in Raman spectral features showed that the abnormal behavior is the result of resonance Raman scattering selection effect.

  15. Silicon nanowire field-effect chemical sensor

    NARCIS (Netherlands)

    Chen, Songyue

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing”, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A nove

  16. Carbon nanofiber-filled conductive silicone elastomers as soft, dry bioelectronic interfaces

    CERN Document Server

    Slipher, G A; Mrozek, R A

    2016-01-01

    Soft and pliable conductive polymer composites hold promise for application as bioelectronic interfaces such as for electroencephalography (EEG). In clinical, laboratory, and real-world EEG there is a desire for dry, soft, and comfortable interfaces to the scalp that are capable of relaying the microvolt-level scalp potentials to signal processing electronics. A key challenge is that most material approaches are sensitive to deformation-induced shifts in electrical impedance associated with decreased signal-to-noise ratio. This is a particular concern in real-world environments where human motion is present. The entire set of brain information outside of tightly controlled laboratory or clinical settings are currently unobtainable due to this challenge. Here we explore the performance of an elastomeric material solution purposefully designed for dry, soft, comfortable scalp contact electrodes for EEG that is specifically targeted to have flat electrical impedance response to deformation to enable utilization ...

  17. Growth of Silicon Nanowires by Heating Si Substrate

    Institute of Scientific and Technical Information of China (English)

    邢英杰; 奚中和; 俞大鹏; 杭青岭; 严涵斐; 冯孙齐; 薛增泉

    2002-01-01

    Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an Ni (or Au) catalyst. The nanowires have a diameter of 10 - 40nm and a length of up to several tens of micrometres.Unlike the well-known vapour-liquid-solid mechanism, a solid-liquid-solid mechanism appeared to control the nanowire growth. The heating process had a strong influence on the growth of silicon nanowires. It was found that ambient gas was necessary to grow nanowires. This method can be used to prepare other kinds of nanowires.

  18. Structural, electronic, and transport properties of silicon nanowires

    OpenAIRE

    Rurali, Riccardo

    2009-01-01

    In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be efficiently treated within electronic structure simulation methods and will be among the most important functional blocks of future nanoelectronic devices. Firstly, we review the structural properties of silicon nanowires, emphasizing the close connection between...

  19. Laser direct synthesis of silicon nanowire field effect transistors

    International Nuclear Information System (INIS)

    We demonstrate a single-step, laser-based technique to fabricate silicon nanowire field effect transistors. Boron-doped silicon nanowires are synthesized using a laser-direct-write chemical vapor deposition process, which can produce nanowires as small as 60 nm, far below the diffraction limit of the laser wavelength of 395 nm. In addition, the method has the advantages of in situ doping, catalyst-free growth, and precise control of nanowire position, orientation, and length. Silicon nanowires are directly fabricated on an insulating surface and ready for subsequent device fabrication without the need for transfer and alignment, thus greatly simplifying device fabrication processes. Schottky barrier nanowire field effect transistors with a back-gate configuration are fabricated from the laser-direct-written Si nanowires and electrically characterized. (paper)

  20. Silicon nanowire field effect transistor for biosensing

    Science.gov (United States)

    Chen, Yu

    Detection and recognition of chemical ions and biological molecules are important in basic science as well as in pharmacology and medicine. Nanotechnology has made it possible to greatly enhance detection sensitivity through the use of nanowires, nanotubes, nanocrystals, nanocantilevers, and quantum dots as sensing platforms. In this work silicon nanowires are used as the conductance channel between the source and drain of a FET (field effect transistor) device and the biomolecular binding on the surface of nanowire modifies the conductance like a change in gate voltage. Due to the high surface-to-volume ratio and unique character of the silicon nanowires, this device has significant advantages in real-time, label-free and highly sensitive detection of a wide range of species, including proteins, nucleic acids and other small molecules. Here we present a biosensor fabricated from CMOS (complementary metal-oxide-semiconductor) compatible top-down methods including electron beam lithography. This method enables scalable manufacturing of multiple sensor arrays with high efficiency. In a systematic study of the device characteristics with different wire widths, we have found the sensitivity of the device increases when wire width decreases. By operating the device in appropriate bias region, the sensitivity of the device can be improved without doping or high temperature annealing. Not only can this device be used to detect the concentration of proteins and metabolites like urea or glucose, but also dynamic information like the dissociation constant can be extracted from the measurement. The device is also used to detect the clinically related cancer antigen CA 15.3 and shows potential application in cancer studies.

  1. Preparation and Characterization of Amorphous Silicon Oxide Nanowires

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Large-scale amorphous silicon nanowires (SiNWs) with a diameter about 100 nm and a length of dozens of micrometers on silicon wafers were synthesized by thermal evaporation of silicon monoxide (SiO).Scanning electron microscope (SEM) and transmission electron microscope (TEM) observations show that the silicon nanowires are smooth.Selected area electron diffraction (SAED) shows that the silicon nanowires are amorphous and energy-dispersive X-ray spectroscopy (EDS) indicates that the nanowires have the composition of Si and O elements in an atomic ratio of 1:2, their composition approximates that of SiO2.SiO is considered to be used as a Si sources to produce SiNWs.We conclude that the growth mechanism is closely related to the defect structure and silicon monoxide followed by growth through an oxide-assisted vapor-solid reaction.

  2. Biodegradable porous silicon barcode nanowires with defined geometry

    OpenAIRE

    Chiappini, Ciro; Liu, Xuewu; Fakhoury, Jean Raymond; Ferrari, Mauro

    2010-01-01

    Silicon nanowires are of proven importance in diverse fields such as energy production and storage, flexible electronics, and biomedicine due to the unique characteristics emerging from their one-dimensional semiconducting nature and their mechanical properties. Here we report the synthesis of biodegradable porous silicon barcode nanowires by metal assisted electroless etch of single crystal silicon with resistivity ranging from 0.0008 Ω-cm to 10 Ω-cm. We define the geometry of the barcode na...

  3. Full process for integrating silicon nanowire arrays into solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Perraud, Simon; Poncet, Severine; Noel, Sebastien; Levis, Michel; Faucherand, Pascal; Rouviere, Emmanuelle [CEA, LITEN, Laboratoire des Composants pour la Recuperation d' Energie, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Thony, Philippe; Jaussaud, Claude; Delsol, Regis [CEA, LITEN, Laboratoire des Composants Solaires, INES-RDI, Savoie Technolac, 50 avenue du Lac Leman, 73377 Le-Bourget-du-Lac (France)

    2009-09-15

    A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour-liquid-solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical-mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100 mW/cm{sup 2}, our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects. (author)

  4. Scattering cross section of metal catalyst atoms in silicon nanowires

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, R.; Cartoixa, X.;

    2010-01-01

    A common technique to fabricate silicon nanowires is to use metal particles (e.g., Au, Ag, Cu, Al) to catalyze the growth reaction. As a consequence, the fabricated nanowires contain small concentrations of these metals as impurities. In this work we investigate the effect of the metallic impurit...

  5. Silicon nanowire synthesis by a vapor-liquid-solid approach

    Science.gov (United States)

    Mao, Aaron; Ng, H. T.; Nguyen, Pho; McNeil, Melanie; Meyyappan, M.

    2005-01-01

    Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.

  6. Global optimization of silicon nanowires for efficient parametric processes

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Xu, Jing; Mørk, Jesper;

    2013-01-01

    We present a global optimization of silicon nanowires for parametric single-pump mixing. For the first time, the effect of surface roughness-induced loss is included in the analysis, significantly influencing the optimum waveguide dimensions.......We present a global optimization of silicon nanowires for parametric single-pump mixing. For the first time, the effect of surface roughness-induced loss is included in the analysis, significantly influencing the optimum waveguide dimensions....

  7. Photoresponsive properties of ultrathin silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes Campus, MM Bldg., Mawson Lakes Blvd., Mawson Lakes, South Australia 5095 (Australia); Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 2.4v Bldg., Wilhelm-Johnen St., Jülich 52428 (Germany)

    2014-12-08

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10{sup 4 }A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  8. Growth model of lantern-like amorphous silicon oxide nanowires

    Science.gov (United States)

    Wu, Ping; Zou, Xingquan; Chi, Lingfei; Li, Qiang; Xiao, Tan

    2007-03-01

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO2 and active carbon at 1000 °C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 µm. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiOx nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  9. Growth model of lantern-like amorphous silicon oxide nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wu Ping; Zou Xingquan; Chi Lingfei; Li Qiang; Xiao Tan [Department of Physics, Shantou University, Shantou 515063 (China)

    2007-03-28

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO{sub 2} and active carbon at 1000 deg. C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 {mu}m. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiO{sub x} nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  10. SiC nanowires synthesized from graphene and silicon vapors

    Science.gov (United States)

    Weichenpei, Luo; Gong-yi, Li; Zengyong, Chu; Tianjiao, Hu; Xiaodong, Li; Xuefei, Zhang

    2016-04-01

    The preparation of silicon carbide (SiC) nanowires is basically important for its potential applications in nanodevices, nanocomposites, etc. In the present work, a simple route was reported to synthesize SiC nanowires by heating commercial graphene with silicon vapors and no catalyst. Characterization by scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, electron energy scattering, X-ray diffraction, and Raman dispersive spectrum demonstrates the products are composed of β-SiC crystal. The SiC nanowires have the average diameter of about 50 nm and length of tens of micrometers. The vapor-solid mechanism was employed to interpret the SiC nanowires growth. Gaseous SiO which was produced by the reaction of Si powders with its surface oxidation reacted with the solid graphene to form SiC crystal nuclei. And SiC crystal nuclei would act as active sites for further growing into nanowires.

  11. All-(111) surface silicon nanowires: selective functionalization for biosensing applications

    NARCIS (Netherlands)

    Masood, M.N.; Chen, S.; Carlen, E.T.; Berg, van den A.

    2010-01-01

    e demonstrate the utilization of selective functionalization of carbon-silicon (C-Si) alkyl and alkenyl monolayers covalently linked to all-(111) surface silicon nanowire (Si-NW) biosensors. Terminal amine groups on the functional monolayer surfaces were used for conjugation of biotin n-hydroxysucci

  12. True reference nanosensor realized with silicon nanowires.

    Science.gov (United States)

    Tarasov, A; Wipf, M; Bedner, K; Kurz, J; Fu, W; Guzenko, V A; Knopfmacher, O; Stoop, R L; Calame, M; Schönenberger, C

    2012-06-26

    Conventional gate oxide layers (e.g., SiO(2), Al(2)O(3), or HfO(2)) in silicon field-effect transistors (FETs) provide highly active surfaces, which can be exploited for electronic pH sensing. Recently, great progress has been achieved in pH sensing using compact integrateable nanowire FETs. However, it has turned out to be much harder to realize a true reference electrode, which--while sensing the electrostatic potential--does not respond to the proton concentration. In this work, we demonstrate a highly effective reference sensor, a so-called reference FET, whose proton sensitivity is suppressed by as much as 2 orders of magnitude. To do so, the Al(2)O(3) surface of a nanowire FET was passivated with a self-assembled monolayer of silanes with a long alkyl chain. We have found that a full passivation can be achieved only after an extended period of self-assembling lasting several days at 80 °C. We use this slow process to measure the number of active proton binding sites as a function of time by a quantitative comparison of the measured nonlinear pH-sensitivities to a theoretical model (site-binding model). Furthermore, we have found that a partially passivated surface can sense small changes in the number of active binding sites reaching a detection limit of δN(s) ≈ 170 μm(-2) Hz(-1/2) at 10 Hz and pH 3. PMID:22631046

  13. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

    Science.gov (United States)

    Cui, Yi; Lieber, Charles M.

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a ``bottom-up'' paradigm for electronics manufacturing.

  14. Surface functionalization of HF-treated silicon nanowires

    Indian Academy of Sciences (India)

    Ming-Wang Shao; Hong Wang; Yan Fu; Jun Hua; Dorothy-Duo-Duo Ma

    2009-05-01

    Versatile methods were employed to investigate the chemical reactivity of hydrogenterminated surface of silicon nanowires. The experimental results showed that coupling reaction took place when silicon nanowires reacted with 2,2,2-trifluoroethyl acrylate, and reductive deposition reaction occurred in the presence of inorganic salt such as HgCl2, and also co-reduction reaction took place in a solution containing both AuCl3 and PdCl2. The possible reaction mechanisms were studied and this study would be expected to favour the homogeneity, selectivity, reproducibility, and stability of SiNW devices or sensors.

  15. Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

    Directory of Open Access Journals (Sweden)

    Arancha Gómez-Martínez

    2014-01-01

    Full Text Available Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

  16. Solar power conversion efficiency in modulated silicon nanowire photonic crystals

    Science.gov (United States)

    Deinega, Alexei; John, Sajeev

    2012-10-01

    It is suggested that using only 1 μm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power conversion efficiency in the range of 15%-20% can be achieved. Choosing a specific modulation profile provides antireflection, light trapping, and back-reflection over broad angles in targeted spectral regions for high efficiency power conversion without solar tracking. Solving both Maxwell's equations in the 3D photonic crystal and the semiconductor drift-diffusion equations in each nanowire, we identify optimal junction and contact geometries and study the influence of the nanowire surface curvature on solar cell efficiency. We demonstrate that suitably modulated nanowires enable 20% efficiency improvement over their straight counterparts made of an equivalent amount of silicon. We also discuss the efficiency of a tandem amorphous and crystalline silicon nanowire photonic crystal solar cell. Opportunities for "hot carrier" collection and up-conversion of infrared light, enhanced by photonic crystal geometry, facilitate further improvements in power efficiency.

  17. Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 陆梅; 孔令斌; 王成伟; 郭新勇; 力虎林

    2002-01-01

    Composite arrays of multi-wall carbon nanotubes (MWNTs) and silicon nanowires (SiNWs) are fabricated by means of the chemical vapour deposition method in porous anodic aluminium oxide (AAO) templates. The results of the scanning electron microscopy, high-resolution transmission electron microscopy, and transmission electron microscopy have shown that SiNWs are successful nested or filled in the hollow cavities of synthesized MWNT arrays in AAO templates to form MWNT-SiNW composite arrays. The photoluminescence (PL) intensity degradation and a blueshift of PL peak position, usually created from the chemical instability of the SiNW surfaces, are decreased and eliminated clearly in the composite arrays. The composite arrays of MWNTs-SiNWs exhibit more enhanced intensity and stability of PL performance than the SiNW arrays deposited in AAO templates.

  18. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    OpenAIRE

    Betz, A. C.; Tagliaferri, M. L. V.; Vinet, M.; Broström, M.; Sanquer, M.; Ferguson, A.J.; Gonzalez-Zalba, M. F.

    2016-01-01

    We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired...

  19. Sub-diffraction Laser Synthesis of Silicon Nanowires

    Science.gov (United States)

    Mitchell, James I.; Zhou, Nan; Nam, Woongsik; Traverso, Luis M.; Xu, Xianfan

    2014-01-01

    We demonstrate synthesis of silicon nanowires of tens of nanometers via laser induced chemical vapor deposition. These nanowires with diameters as small as 60 nm are produced by the interference between incident laser radiation and surface scattered radiation within a diffraction limited spot, which causes spatially confined, periodic heating needed for high resolution chemical vapor deposition. By controlling the intensity and polarization direction of the incident radiation, multiple parallel nanowires can be simultaneously synthesized. The nanowires are produced on a dielectric substrate with controlled diameter, length, orientation, and the possibility of in-situ doping, and therefore are ready for device fabrication. Our method offers rapid one-step fabrication of nano-materials and devices unobtainable with previous CVD methods.

  20. Raman spectra of silicon carbide small particles and nanowires

    International Nuclear Information System (INIS)

    Two manufacturing protocols of silicon carbide (SiC) nanowires are discussed. The Raman spectra of produced SiC nanowires are compared with spectra of SiC powders of various grain sizes. The temperature and pressure dependence of the Raman spectra for powders is similar to that of bulk crystals, but is different for nanowires. Frequency shifts, band broadenings and the presence of shoulders are discussed in terms of crystal size, character of defects and their population. The concentration of defects in synthesized nanowires depends on the sintering method. Raman intensity enhancement of the LO phonon was observed when the wavelength of the excitation laser was changed from 780 to 514 nm

  1. The diameter-dependent photoelectrochemical performance of silicon nanowires.

    Science.gov (United States)

    Zhang, Bing-Chang; Wang, Hui; He, Le; Duan, Chun-Yang; Li, Fan; Ou, Xue-Mei; Sun, Bao-Quan; Zhang, Xiao-Hong

    2016-01-25

    We demonstrate the first systematic study of the diameter-dependent photoelectrochemical performance of single silicon nanowires within a broad size range from 200 to 2000 nm. SiNWs with a diameter of 1415 nm exhibit the highest solar energy conversion efficiency, which can be mainly traced to their diameter-dependent light absorption properties.

  2. Silicon Nanowire as Virus Sensor in a Total Analysis System

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Jørgensen, Michael; Andresen, Lars;

    2011-01-01

    Silicon nanowires are very promising candidates for the sensitive detection of viruses or even early detection of cancer. Due to their small dimensions the attachment of even one particle on their surface leads to detectable changes in their conductivity. In this paper we describe the development...

  3. Transport in Silicon Nanowires: Role of Radial Dopant Profile

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, Riccardo; Jauho, Antti-Pekka;

    2008-01-01

    We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different dist...

  4. H2 sensing properties of modified silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    Latefa Baba Ahmed; Sabrina Naama; Aissa Keffous; Abdelkader Hassein-Bey; Toufik Hadjersi

    2015-01-01

    It has been found that the silicon nanowires modified with noble metals can be used to fabricate an effective H2 gas sensor in the present study. The preparation and surface modification of silicon nanowires (SiNWs) were carried out by chemical methods. The morphology of the silicon nanowires unmodified and modified with nanoparticles of platinum, palladium, silver and gold was investigated using scanning electron microscopy (SEM). The chemical composition of the silicon nanowire layers was studied by secondary ion mass spectroscopy (SIMS) and energy dispersive X-ray analysis (EDX). The structures of type metal/SiNWs/p-Si/Al were fabricated. The electrical characterization (I–V) was performed in primary vacuum and H2 at different concentrations. It was found that the metal type used to modify the SiNWs strongly influenced the I–V characteristics. The response of these structures toward H2 gas was studied as a function of the metal type. Finally, the sensing characteristics and performance of the sensors were investigated.

  5. H2 sensing properties of modified silicon nanowires

    Directory of Open Access Journals (Sweden)

    Latefa Baba Ahmed

    2015-04-01

    Full Text Available It has been found that the silicon nanowires modified with noble metals can be used to fabricate an effective H2 gas sensor in the present study. The preparation and surface modification of silicon nanowires (SiNWs were carried out by chemical methods. The morphology of the silicon nanowires unmodified and modified with nanoparticles of platinum, palladium, silver and gold was investigated using scanning electron microscopy (SEM. The chemical composition of the silicon nanowire layers was studied by secondary ion mass spectroscopy (SIMS and energy dispersive X-ray analysis (EDX. The structures of type metal/SiNWs/p-Si/Al were fabricated. The electrical characterization (I–V was performed in primary vacuum and H2 at different concentrations. It was found that the metal type used to modify the SiNWs strongly influenced the I–V characteristics. The response of these structures toward H2 gas was studied as a function of the metal type. Finally, the sensing characteristics and performance of the sensors were investigated.

  6. Silicon-nanowire based attachment of silicon chips for mouse embryo labelling.

    Science.gov (United States)

    Durán, S; Novo, S; Duch, M; Gómez-Martínez, R; Fernández-Regúlez, M; San Paulo, A; Nogués, C; Esteve, J; Ibañez, E; Plaza, J A

    2015-03-21

    The adhesion of small silicon chips to cells has many potential applications as direct interconnection of the cells to the external world can be accomplished. Hence, although some typical applications of silicon nanowires integrated into microsystems are focused on achieving a cell-on-a-chip strategy, we are interested in obtaining chip-on-a-cell systems. This paper reports the design, technological development and characterization of polysilicon barcodes featuring silicon nanowires as nanoscale attachment to identify and track living mouse embryos during their in vitro development. The chips are attached to the outer surface of the Zona Pellucida, the cover that surrounds oocytes and embryos, to avoid the direct contact between the chip and the embryo cell membrane. Two attachment methodologies, rolling and pushpin, which allow two entirely different levels of applied forces to attach the chips to living embryos, are evaluated. The former consists of rolling the mouse embryos over one barcode with the silicon nanowires facing upwards, while in the latter, the barcode is pushed against the embryo with a micropipette. The effect on in vitro embryo development and the retention rate related to the calculated applied forces are stated. Field emission scanning electron microscopy inspection, which allowed high-resolution imaging, also confirms the physical attachment of the nanowires with some of them piercing or wrapped by the Zona Pellucida and revealed extraordinary bent silicon nanowires. PMID:25609565

  7. Performance Analysis of Silicon and Germanium Nanowire Transistor using Crystal Orientation and Oxide Thickness

    OpenAIRE

    P.Theres Mary; N.B. BALAMURUGAN

    2014-01-01

    Nanowire Transistors have attracted attention due to the probable high performance and excellent controllability of device current. In this paper, we investigate the performance analysis of nanowire transistors made of silicon and germanium materials. The nanowire transistor has a 3D distribution of electron density and electrostatic potential, therefore self-consistent 3D simulations are used. Nanowire (tool) is 3D Poisson self-consistent simulator which can study the 3D transport in nanowir...

  8. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  9. Characterization of functional biointerface on silicon nanowire MOSFET.

    Science.gov (United States)

    Lin, Shu-Ping; Liu, Mao-Chen; Chi, Tien-Yin; Kang, Yu-Shan

    2011-01-01

    Biointerface between biological organisms and electronic devices has attracted a lot of attention since a biocompatible and functional interface can revolutionize medical applications of bioelectronics. Here, we used 3-aminopropyl trimethoxysilane (APTMS) self-assembled monolayer (SAM) to modify the surface of nanowire-based metal-oxide-semiconductor field-effect transistors (NW-MOSFETs) for pH sensing and later creation of biointerface. Electrical measurement was utilized to first verify the sensing response of unmodified NW-MOSFETs and then examine pH sensing on APTMS modified NW-MOSFETs. A biointerface was then created by immobilizing polylysine, either poly-D-lysine (PDL) or poly-L-lysine (PLL), on APTMS modified NW-MOSFETs. This biointerface was characterized by electron spectroscopy for chemical analysis (ESCA), cell biocompatibility, and fluorescent images. The results of ESCA verified the amide bonding (CONH) between polylysine and APTMS modified surface. After PC12 cultured on polylysine-APTMS modified area, highly selective areas for cell growth were observed by fluorescent microscope. Analysis and improvement of selectively cell-growth biointerface on the NW-MOSFETs gave us an insight into future development of neuronal biosensors. PMID:22255403

  10. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica

    OpenAIRE

    Luo Xiaogang; Ma Wenhui; Zhou Yang; Liu Dachun; Yang Bin; Dai Yongnian

    2009-01-01

    Abstract Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core–shell structure and gr...

  11. Top-down silicon microcantilever with coupled bottom-up silicon nanowire for enhanced mass resolution

    International Nuclear Information System (INIS)

    A stepped cantilever composed of a bottom-up silicon nanowire coupled to a top-down silicon microcantilever electrostatically actuated and with capacitive or optical readout is fabricated and analyzed, both theoretically and experimentally, for mass sensing applications. The mass sensitivity at the nanowire free end and the frequency resolution considering thermomechanical noise are computed for different nanowire dimensions. The results obtained show that the coupled structure presents a very good mass sensitivity thanks to the nanowire, where the mass depositions take place, while also presenting a very good frequency resolution due to the microcantilever, where the transduction is carried out. A two-fold improvement in mass sensitivity with respect to that of the microcantilever standalone is experimentally demonstrated, and at least an order-of-magnitude improvement is theoretically predicted, only changing the nanowire length. Very close frequency resolutions are experimentally measured and theoretically predicted for a standalone microcantilever and for a microcantilever-nanowire coupled system. Thus, an improvement in mass sensing resolution of the microcantilever-nanowire stepped cantilever is demonstrated with respect to that of the microcantilever standalone. (paper)

  12. Enhanced diode performance in cadmium telluride–silicon nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Department of Physics, Nigde University, 51240 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Akgul, Guvenc, E-mail: guvencakgul@gmail.com [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Gullu, Hasan Huseyin [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Unalan, Husnu Emrah [Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Turan, Rasit [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey)

    2015-09-25

    Highlights: • Vertically well oriented Si nanowire arrays on Si wafer were synthesized. • Semiconductor CdTe thin film/Si nanowire devices were successfully fabricated. • Optoelectronic properties of the fabricated devices were investigated. • Enhanced electrical and diode properties for the devices were observed. • The devices exhibited strong photosensitivity in near infrared region. - Abstract: We report on the structural and optoelectronic characteristics and photodetection properties of cadmium telluride (CdTe) thin film/silicon (Si) nanowire heterojunction diodes. A simple and cost-effective metal-assisted etching (MAE) method is applied to fabricate vertically oriented Si nanowires on n-type single crystalline Si wafer. Following the nanowire synthesis, CdTe thin films are directly deposited onto the Si nanowire arrays through RF magnetron sputtering. A comparative study of X-ray diffraction (XRD) and Raman spectroscopy shows the improved crystallinity of the CdTe thin films deposited onto the Si nanowires. The fabricated nanowire based heterojunction devices exhibit remarkable diode characteristics, enhanced optoelectronic properties and photosensitivity in comparison to the planar reference device. The electrical measurements revealed that the diodes have a well-defined rectifying behavior with a superior rectification ratio of 10{sup 5} at ±5 V and a relatively small ideality factor of n = 1.9 with lower reverse leakage current and series resistance at room temperature in dark condition. Moreover, an open circuit voltage of 120 mV is also observed under illumination. Based on spectral photoresponsivity measurements, the nanowire based device exhibits a distinct responsivity (0.35–0.5 A W{sup −1}) and high detectivity (6 × 10{sup 12}−9 × 10{sup 12} cm Hz{sup 1/2} W{sup −1}) in near-infrared wavelength region. The enhanced device performance and photosensitivity is believed to be due to three-dimensional nature of the interface between

  13. Enhanced diode performance in cadmium telluride–silicon nanowire heterostructures

    International Nuclear Information System (INIS)

    Highlights: • Vertically well oriented Si nanowire arrays on Si wafer were synthesized. • Semiconductor CdTe thin film/Si nanowire devices were successfully fabricated. • Optoelectronic properties of the fabricated devices were investigated. • Enhanced electrical and diode properties for the devices were observed. • The devices exhibited strong photosensitivity in near infrared region. - Abstract: We report on the structural and optoelectronic characteristics and photodetection properties of cadmium telluride (CdTe) thin film/silicon (Si) nanowire heterojunction diodes. A simple and cost-effective metal-assisted etching (MAE) method is applied to fabricate vertically oriented Si nanowires on n-type single crystalline Si wafer. Following the nanowire synthesis, CdTe thin films are directly deposited onto the Si nanowire arrays through RF magnetron sputtering. A comparative study of X-ray diffraction (XRD) and Raman spectroscopy shows the improved crystallinity of the CdTe thin films deposited onto the Si nanowires. The fabricated nanowire based heterojunction devices exhibit remarkable diode characteristics, enhanced optoelectronic properties and photosensitivity in comparison to the planar reference device. The electrical measurements revealed that the diodes have a well-defined rectifying behavior with a superior rectification ratio of 105 at ±5 V and a relatively small ideality factor of n = 1.9 with lower reverse leakage current and series resistance at room temperature in dark condition. Moreover, an open circuit voltage of 120 mV is also observed under illumination. Based on spectral photoresponsivity measurements, the nanowire based device exhibits a distinct responsivity (0.35–0.5 A W−1) and high detectivity (6 × 1012−9 × 1012 cm Hz1/2 W−1) in near-infrared wavelength region. The enhanced device performance and photosensitivity is believed to be due to three-dimensional nature of the interface between the CdTe thin film and the Si

  14. Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

    DEFF Research Database (Denmark)

    Baets, R.; Kuyken, B.; Liu, X.;

    2012-01-01

    Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm.......Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....

  15. Approaching the ideal elastic strain limit in silicon nanowires.

    Science.gov (United States)

    Zhang, Hongti; Tersoff, Jerry; Xu, Shang; Chen, Huixin; Zhang, Qiaobao; Zhang, Kaili; Yang, Yong; Lee, Chun-Sing; Tu, King-Ning; Li, Ju; Lu, Yang

    2016-08-01

    Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this "deep ultra-strength" for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising "elastic strain engineering" applications. PMID:27540586

  16. Synthesis and investigation of silicon carbide nanowires by HFCVD method

    Indian Academy of Sciences (India)

    S H MORTAZAVI; M GHORANNEVISS; M DADASHBABA; R ALIPOUR

    2016-08-01

    Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour deposition (HFCVD) mechanism in the temperature range of 600–800$^{\\circ}$C. Synthesis is performed under vacuum in the atmospheres of hexamethyldisiloxane/alcohol (HMDSO/C2H5OH) vapour and hydrogen (H$_2$) gas mixture. In this research dependence of SiC properties on temperature is discussed. Morphology and structural properties of SiC nanowire grown on glass substrate were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), energy diffraction spectrometer (EDX), and four-point probe (4PP). Also Mountains Map Premium (64-bit version)software is used to investigate morphological features of samples. In this context, the analysis of the motifs, depth histograms, statistical parameters, texture direction, fractal, and the peak count histograms of the nanostructuresurface of samples are carried out. According to analysis, SiC films had a good crystal quality without defects or low residual stress. We found that increasing substrate temperature increases silicon and oxygen doping amount. We also found that electrical resistivity and surface roughness increased by increasing substrate temperature. This study showed that SiC nanowires with high density grew on the free catalyst glass substrate, and the alignment of SiC nanowires decreased.

  17. Approaching the ideal elastic strain limit in silicon nanowires.

    Science.gov (United States)

    Zhang, Hongti; Tersoff, Jerry; Xu, Shang; Chen, Huixin; Zhang, Qiaobao; Zhang, Kaili; Yang, Yong; Lee, Chun-Sing; Tu, King-Ning; Li, Ju; Lu, Yang

    2016-08-01

    Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this "deep ultra-strength" for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising "elastic strain engineering" applications.

  18. Assessment on thermoelectric power factor in silicon nanowire networks

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J.; Kobayashi, Nobuhiko P. [Baskin School of Engineering, University of California Santa Cruz, CA (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz, NASA Ames Research Center, Moffett Field, CA (United States); Coleman, Elane; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

    2012-01-15

    Thermoelectric devices based on three-dimensional networks of highly interconnected silicon nanowires were fabricated and the parameters that contribute to the power factor, namely the Seebeck coefficient and electrical conductivity were assessed. The large area (2 cm x 2 cm) devices were fabricated at low cost utilizing a highly scalable process involving silicon nanowires grown on steel substrates. Temperature dependence of the Seebeck coefficient was found to be weak over the range of 20-80 C at approximately -400 {mu}V/K for unintentionally doped devices and {+-}50 {mu}V/K for p-type and n-type devices, respectively. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Enhanced thermoelectric performance of rough silicon nanowires.

    Science.gov (United States)

    Hochbaum, Allon I; Chen, Renkun; Delgado, Raul Diaz; Liang, Wenjie; Garnett, Erik C; Najarian, Mark; Majumdar, Arun; Yang, Peidong

    2008-01-10

    Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

  20. Temperature dependence of the thermal conductivity of thin silicon nanowires.

    Science.gov (United States)

    Donadio, Davide; Galli, Giulia

    2010-03-10

    We compute the lattice thermal conductivity (kappa) of silicon nanowires as a function of temperature by molecular dynamics simulations. In wires with amorphous surfaces kappa may reach values close to that of amorphous silicon and is nearly constant between 200 and 600 K; this behavior is determined by the presence of a majority of nonpropagating vibrational modes. We develop a parameter-free model that accounts for the temperature dependence observed in our simulations and provides a qualitative explanation of recent experiments. PMID:20163124

  1. Automatic Release of Silicon Nanowire Arrays with a High Integrity for Flexible Electronic Devices

    OpenAIRE

    Luo Wu; Shuxin Li; Weiwei He; Dayong Teng; Ke Wang; Changhui Ye

    2014-01-01

    Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 ≤ x ≤ 2) to Si nanowires. Ag plays a key role to the neat and uniform release of Si/SiOx nanowire arrays from Si wafer in the ammonia etc...

  2. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  3. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  4. Silicon nanowires for ultra-fast and ultrabroadband optical signal processing

    DEFF Research Database (Denmark)

    Ji, Hua; Hu, Hao; Pu, Minhao;

    2015-01-01

    In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical...... signal processing....

  5. Structural and electrical properties of trimethylboron-doped silicon nanowires

    Science.gov (United States)

    Lew, Kok-Keong; Pan, Ling; Bogart, Timothy E.; Dilts, Sarah M.; Dickey, Elizabeth C.; Redwing, Joan M.; Wang, Yanfeng; Cabassi, Marco; Mayer, Theresa S.; Novak, Steven W.

    2004-10-01

    Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B2H6) sources. Boron concentrations ranging from 1×1018 to 4×1019cm-3 were obtained by varying the inlet dopant/SiH4 gas ratio. TEM characterization revealed that the B2H6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B2H6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.

  6. Investigation of functionalized silicon nanowires by self-assembled monolayer

    Science.gov (United States)

    Hemed, Nofar Mintz; Convertino, Annalisa; Shacham-Diamand, Yosi

    2016-03-01

    The functionalization using self assembled monolayer (SAM) of silicon nanowires (SiNW) fabricated by plasma enhanced chemical vapor deposition (PECVD) is reported here. The SAM is being utilized as the first building block in the functionalization process. The morphology of the SiNW comprises a polycrystalline core wrapped by an hydrogenated amorphous silicon (α-Si:H) shell. Since most of the available methods for SAM verification and characterization are suitable only for flat substrates; therefore, in addition to the SiNW α-Si:H on flat samples were produced in the same system as the SiNWs. First we confirmed the SAM's presence on the flat α-Si:H samples using the following methods: contact angle measurement to determine the change in surface energy; atomic force microscopy (AFM) to determine uniformity and molecular coverage. Spectroscopic ellipsometry and X-ray reflectivity (XRR) were performed to measure SAM layer thickness and density. X-ray photoelectron spectroscopy (XPS) was applied to study the chemical states of the surface. Next, SiNW/SAM were tested by electrochemical impedance spectroscopy (EIS), and the results were compared to α-Si:H/SAM. The SAM electrical coverage on SiNW and α-Si:H was found to be ∼37% and ∼65 ± 3%, respectively. A model, based on transmission line theory for the nanowires is presented to explain the disparity in results between the nanowires and flat surface of the same materials.

  7. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica

    Directory of Open Access Journals (Sweden)

    Luo Xiaogang

    2009-01-01

    Full Text Available Abstract Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core–shell structure and grow along <111> direction. The diameter of silicon carbide nanowires is about 50–200 nm and the length from tens to hundreds of micrometers. The vapor–solid mechanism is proposed to elucidate the growth process. The photoluminescence of the synthesized silicon carbide nanowires shows significant blueshifts, which is resulted from the existence of oxygen defects in amorphous layer and the special rough core–shell interface.

  8. Atomistic modeling of metallic nanowires in silicon

    Science.gov (United States)

    Ryu, Hoon; Lee, Sunhee; Weber, Bent; Mahapatra, Suddhasatta; Hollenberg, Lloyd C. L.; Simmons, Michelle Y.; Klimeck, Gerhard

    2013-08-01

    Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors, where a single P atom has been placed inside a transistor architecture with atomic precision accuracy. Despite the dimensions of the critical parts of these devices being defined by a small number of P atoms, the device electronic properties are influenced by the surrounding 104 to 106 Si atoms. Such effects are hard to capture with most modeling approaches, and prior to this work no theory existed that could explore the realistic size of the complete device in which both dopant disorder and placement are important. This work presents a comprehensive study of the electronic and transport properties of ultra-thin (understanding of atomic-scale electronics.Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors, where a single P atom has been placed inside a transistor architecture with atomic precision accuracy. Despite the dimensions of the critical parts of these devices being defined by a small number of P atoms, the device electronic properties are influenced by the surrounding 104 to 106 Si atoms. Such effects are hard to capture with most modeling approaches, and prior to this work no theory existed that could explore the realistic size of the complete device in which both dopant disorder and placement are important. This work presents a comprehensive study of the electronic and transport properties of ultra-thin (understanding of atomic-scale electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01796f

  9. Heat Conductance is Strongly Anisotropic for Pristine Silicon Nanowires

    DEFF Research Database (Denmark)

    Markussen, Troels; Jauho, Antti-Pekka; Brandbyge, Mads

    2008-01-01

    We compute atomistically the heat conductance for ultrathin pristine silicon nanowires (SiNWs) with diameters ranging from 1 to 5 nm. The room temperature thermal conductance is found to be highly anisotropic: wires oriented along the 110 direction have 50−75% larger conductance than wires oriented...... instead use the Tersoff empirical potential model (TEP). For the smallest wires, the thermal conductances obtained from DFT and TEP calculations agree within 10%. The presented results could be relevant for future phonon-engineering of nanowire devices....... along the 100 and 111 directions. We show that the anisotropies can be qualitatively understood and reproduced from the bulk phonon band structure. Ab initio density functional theory (DFT) is used to study the thinnest wires, but becomes computationally prohibitive for larger diameters, where we...

  10. Monolithically Integrated High-β Nanowire Lasers on Silicon.

    Science.gov (United States)

    Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

    2016-01-13

    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects. PMID:26618638

  11. Optical biosensor based on silicon nanowire ridge waveguide

    Science.gov (United States)

    Gamal, Rania; Ismail, Yehia; Swillam, Mohamed A.

    2015-02-01

    Optical biosensors present themselves as an attractive solution for integration with the ever-trending lab-on-a-chip devices. This is due to their small size, CMOS compatibility, and invariance to electromagnetic interference. Despite their many benefits, typical optical biosensors rely on evanescent field detection, where only a small portion of the light interacts with the analyte. We propose to use a silicon nanowire ridge waveguide (SNRW) for optical biosensing. This structure is comprised of an array of silicon nanowires, with the envelope of a ridge, on an insulator substrate. The SNRW maximizes the overlap between the analyte and the incident light wave by introducing voids to the otherwise bulk structure, and strengthens the contribution of the material under test to the overall modal effective index will greatly augment the sensitivity. Additionally, the SNRW provides a fabrication convenience as it covers the entire substrate, ensuring that the etching process would not damage the substrate. FDTD simulations were conducted and showed that the percentage change in the effective index due to a 1% change in the surrounding environment was more than 170 times the amount of change perceived in an evanescent detection based bulk silicon ridge waveguide.

  12. Automatic Release of Silicon Nanowire Arrays with a High Integrity for Flexible Electronic Devices

    Science.gov (United States)

    Wu, Luo; Li, Shuxin; He, Weiwei; Teng, Dayong; Wang, Ke; Ye, Changhui

    2014-01-01

    Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 ≤ x ≤ 2) to Si nanowires. Ag plays a key role to the neat and uniform release of Si/SiOx nanowire arrays from Si wafer in the ammonia etching process. The vertical Si nanowire array device, with both sides having high-quality Ohmic contact, can be transferred to arbitrary substrates, especially on a flexible substrate. The method developed here offers a facile method to realize flexible Si nanowire array functional devices. PMID:24487460

  13. Electron transport in silicon nanowires having different cross-sections

    Directory of Open Access Journals (Sweden)

    Muscato Orazio

    2016-06-01

    Full Text Available Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.

  14. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

    OpenAIRE

    Jieun Lee; Jaeman Jang; Bongsik Choi; Jinsu Yoon; Jee-Yeon Kim; Yang-Kyu Choi; Dong Myong Kim; Dae Hwan Kim; Sung-Jin Choi

    2015-01-01

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 105 times larger than that of a single SiNW sensor. I...

  15. Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

    Science.gov (United States)

    Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

    2016-08-01

    Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

  16. Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration

    DEFF Research Database (Denmark)

    Alam, Sardar Bilal; Panciera, Federico; Hansen, Ole;

    2015-01-01

    The formation of self-assembled contacts between vapor-liquid-solid grown silicon nanowires and flat silicon surfaces was imaged in situ using electron microscopy. By measuring the structural evolution of the contact formation process, we demonstrate how different contact geometries are created by...... adjusting the balance between silicon deposition and Au migration. We show that electromigration provides an efficient way of controlling the contact. The results point to novel device geometries achieved by direct nanowire growth on devices....

  17. Reliable fabrication of sub-10 nm silicon nanowires by optical lithography.

    Science.gov (United States)

    Ramadan, Sami; Kwa, Kelvin; King, Peter; O'Neill, Anthony

    2016-10-21

    The reliable and controllable fabrication of silicon nanowires is achieved, using mature CMOS technology processes. This will enable a low-cost route to integrating novel nanostructures with CMOS logic. The challenge of process repeatability has been overcome by careful study of material properties for processes such as etching and oxidation. By controlling anisotropic wet etching conditions, selection of nitride mask layer properties and sidewall oxidation, a robust process was achieved to realize silicon nanowires with sub 10 nm features. Surface roughness of nanowires was improved by a suitable oxidation step. The influence of process conditions on the shape of the nanowire was studied using TCAD simulation. PMID:27608370

  18. Effective antireflection properties of porous silicon nanowires for photovoltaic applications

    KAUST Repository

    Najar, Adel

    2013-01-01

    Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 µm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.

  19. Thermal Transport in Silicon Nanowires at High Temperature up to 700 K.

    Science.gov (United States)

    Lee, Jaeho; Lee, Woochul; Lim, Jongwoo; Yu, Yi; Kong, Qiao; Urban, Jeffrey J; Yang, Peidong

    2016-07-13

    Thermal transport in silicon nanowires has captured the attention of scientists for understanding phonon transport at the nanoscale, and the thermoelectric figure-of-merit (ZT) reported in rough nanowires has inspired engineers to develop cost-effective waste heat recovery systems. Thermoelectric generators composed of silicon target high-temperature applications due to improved efficiency beyond 550 K. However, there have been no studies of thermal transport in silicon nanowires beyond room temperature. High-temperature measurements also enable studies of unanswered questions regarding the impact of surface boundaries and varying mode contributions as the highest vibrational modes are activated (Debye temperature of silicon is 645 K). Here, we develop a technique to investigate thermal transport in nanowires up to 700 K. Our thermal conductivity measurements on smooth silicon nanowires show the classical diameter dependence from 40 to 120 nm. In conjunction with Boltzmann transport equation, we also probe an increasing contribution of high-frequency phonons (optical phonons) in smooth silicon nanowires as the diameter decreases and the temperature increases. Thermal conductivity of rough silicon nanowires is significantly reduced throughout the temperature range, demonstrating a potential for efficient thermoelectric generation (e.g., ZT = 1 at 700 K).

  20. AuPd CATALYTIC NANOPARTICLE SIZE EFFECT ON THE FORMATION OF AMORPHOUS SILICON NANOWIRES

    Institute of Scientific and Technical Information of China (English)

    LIU ZU-QIN; SUN LIAN-FENG; TANG DONG-SHENG; ZHOU WEI-YA; LI YU-BAO; Zou XIAO-PING

    2000-01-01

    Amorphous silicon (a-Si) nanowires have been prepared on SiO2/Si substrates by AuPd nanoparticles / silane reaction method. Field-emission scanning electron microscopy and transmission electron microscopy were used to characterize the samples. The typical a-Si nanowires we obtained are of a uniform diameter about 20 nm and length up to several micrometers. The growth mechanism of the nanowires seems to be the vapor-liquid-solid mechanism. The catalytic particle size effect on the formation of the nanowires and the cause of forming amorphous state Si nanowires are discussed.

  1. Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating

    Science.gov (United States)

    Ryu, Sang-gil; Kim, Eunpa; Allen, Frances I.; Hwang, David J.; Minor, Andrew M.; Grigoropoulos, Costas P.

    2016-08-01

    We investigate the early stage of silicon nanowire growth by the vapor-liquid-solid mechanism using laser-localized heating combined with ex-situ chemical mapping analysis by energy-filtered transmission electron microscopy. By achieving fast heating and cooling times, we can precisely determine the nucleation times for nanowire growth. We find that the silicon nanowire nucleation process occurs on a time scale of ˜10 ms, i.e., orders of magnitude faster than the times reported in investigations using furnace processes. The rate-limiting step for silicon nanowire growth at temperatures in the vicinity of the eutectic temperature is found to be the gas reaction and/or the silicon crystal growth process, whereas at higher temperatures it is the rate of silicon diffusion through the molten catalyst that dictates the nucleation kinetics.

  2. DRIE process optimization to fabricate vertical silicon nanowires using gold nanoparticles as masks

    Science.gov (United States)

    Bui, Thanh Tung; Phuc Tu, Hoan; Chien Dang, Mau

    2015-12-01

    Silicon nanowires have applications in various fields, e.g. vertical transistors, chemical or biological sensors, energy conversion, and storage devices. So far they have typically been obtained by bottom-up methods such as vapor-liquid-solid (VLS) synthesis, starting from metal nanoparticles. In this study, silicon nanowires are fabricated by dry reactive-ion etching using gold nanoparticles as a mask. Starting with the Bosch process, the cycle of SF6 plasma etching and C4F8 plasma deposition was optimized to control the quality of the resulting silicon nanowires.

  3. A silicon-nanowire memory driven by optical gradient force induced bistability

    International Nuclear Information System (INIS)

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits

  4. A silicon-nanowire memory driven by optical gradient force induced bistability

    Energy Technology Data Exchange (ETDEWEB)

    Dong, B. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Cai, H., E-mail: caih@ime.a-star.edu.sg; Gu, Y. D.; Kwong, D. L. [Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Chin, L. K.; Ng, G. I.; Ser, W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Huang, J. G. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); School of Mechanical Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Yang, Z. C. [School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China); Liu, A. Q., E-mail: eaqliu@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China)

    2015-12-28

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  5. Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

    Energy Technology Data Exchange (ETDEWEB)

    Cayron, Cyril; Latu-Romain, Laurence; Mouchet, Celine; Secouard, Christopher; Rouviere, Emmanuelle; Simonato, Jean-Pierre [CEA DRT, LITEN, Minatec, 38 - Grenoble (France); Den Hertog, Martien; Rouviere, Jean-Luc [CEA, DSM, INAC, Minatec, 38 - Grenoble (France)

    2009-04-15

    Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grown via the vapour-liquid- solid method and on silicon thin films deposited by electron beam evaporation. Many explanations have been given in the past, without consensus among the scientific community: size artifacts, twinning artifacts or, more widely accepted, the existence of new hexagonal Si phases. In order to resolve this issue, the microstructures of Si nanowires and Si thin films have been characterized by TEM, high-resolution transmission electron microscopy (HRTEM) and highresolution scanning transmission electron microscopy. Despite the differences in the geometries and elaboration processes, the EDPs of the materials show great similarities. The different hypotheses reported in the literature have been investigated. It was found that the positions of the diffraction spots in the EDPs could be reproduced by simulating a hexagonal structure with c/a=12(2/3){sup 1/2}, but the intensities in many EDPs remained unexplained. Finally, it was established that all the experimental data, i.e. EDPs and HRTEM images, agree with a classical cubic silicon structure containing two microstructural defects: (i) overlapping {sigma}3 microtwins which induce extra spots by double diffraction, and (ii) nanotwins which induce extra spots as a result of streaking effects. It is concluded that there is no hexagonal phase in the Si nanowires and the Si thin films presented in this work. (orig.)

  6. Incorporation and characterization of boron neutron capture therapy agents into mesoporous silicon and silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Ke; Coffer, Jeffery L. [Department of Chemistry, Texas Christian University, Fort Worth, TX 76129 (United States); Loni, Armando; Canham, Leigh T. [PSi Medica Ltd., Malvern, Worcestershire, WR14 3SZ (United Kingdom); Intrinsiq Materials Ltd., Malvern, Worcestershire, WR14 3SZ (United Kingdom)

    2009-06-15

    The tunable pore size, biodegradability, and surface chemistry of mesoporous silicon (BioSilicon trademark) are important to a broad spectrum of uses for drug delivery. For the case of Boron Neutron Capture Therapy (BNCT), encapsulation of a given boron-containing drug molecule within a porous BioSilicon trademark microparticle provides a vehicle for a brachytherapy method that avoids the necessity of drug modification. In this work, the loading and characterization of three clinically approved BNCT drugs into mesoporous Si is demonstrated. Because of difficulties associated with light element detection, a method based on a Beer's Law analysis of selected FTIR vibrational bands has been developed to estimate boron-containing drug loading in these materials. As a complementary nanostructural platform, a cathodic deposition process for the surface enriched growth of selected drugs onto the surface of silicon nanowires is also described. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. The mechanisms of platinum-catalyzed silicon nanowire growth

    International Nuclear Information System (INIS)

    Platinum (Pt) has been known as a catalyst material for vapor-liquid-solid (VLS) synthesis since the mid 1960s with the potential to grow electronic grade silicon nanowires (SiNWs). In contrast to gold-based growth, Pt-catalyzed SiNW synthesis has rarely been studied, most likely due to higher synthesis temperatures and the formation of multiple Pt silicide phases. Here we present the growth of SiNWs from a Pt catalyst deposited by a focused ion or electron beam, which opens new strategies for the assembly of Pt-catalyzed SiNW-based devices, as well as SiNW growth from Pt nanoparticles and thin films. We show that single-crystalline SiNWs exhibit either the well-known catalyst tip or a polycrystalline silicon tip so far not reported. The local Pt concentration was found to be one key parameter triggering the growth mode. The proposed growth model for both types of SiNWs is based on a solid-state silicide-mediated crystallization rather than VLS. The discussion of the growth modes is supported by a variation of several growth parameters and SiNW synthesis using the substrate materials silicon nitride, single-crystalline silicon, fused silica, and sapphire. (paper)

  8. Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Dkhil, S., E-mail: sadok.bendekhil@gmail.com [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Bourguiga, R. [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Davenas, J. [Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Cornu, D. [Institut Europeen des Membranes, UMR CNRS 5635, Ecole Nationale superieure de Chimie, Universite de Montpellier, 1919 route de Mende, F34000 Montpellier (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Hybrid solar cells based on blends of poly(N-vinylcarbazole) and silicon nanowires have been fabricated. Black-Right-Pointing-Pointer We have investigated the charge transfer between PVK and SiNWs by the way of the quenching of the PVK photoluminescence. Black-Right-Pointing-Pointer The relation between the morphology of the composite thin films and the charge transfer between SiNWs and PVK has been examined. Black-Right-Pointing-Pointer We have investigated the effects of SiNWs concentration on the photovoltaic characteristics leading to the optimization of a critical SiNWs concentration. - Abstract: Hybrid thin films combining the high optical absorption of a semiconducting polymer film and the electronic properties of silicon fillers have been investigated in the perspective of the development of low cost solar cells. Bulk heterojunction photovoltaic materials based on blends of a semiconductor polymer poly(N-vinylcarbazole) (PVK) as electron donor and silicon nanowires (SiNWs) as electron acceptor have been studied. Composite PVK/SiNWs films were cast from a common solvent mixture. UV-visible spectrometry and photoluminescence of the composites have been studied as a function of the SiNWs concentration. Photoluminescence spectroscopy (PL) shows the existence of a critical SiNWs concentration of about 10 wt % for PL quenching corresponding to the most efficient charge pair separation. The photovoltaic (PV) effect has been studied under illumination. The optimum open-circuit voltage V{sub oc} and short-circuit current density J{sub sc} are obtained for 10 wt % SiNWs whereas a degradation of these parameters is observed at higher SiNWs concentrations. These results are correlated to the formation of aggregates in the composite leading to recombination of the photogenerated charge pairs competing with the dissociation mechanism.

  9. Layered structure in core–shell silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Van Tuan, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Anh Tuan, Chu; Thanh Thuy, Tran; Binh Nam, Vu [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Toan Thang, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Hong Duong, Pham, E-mail: duongphamhong@yahoo.com [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Thanh Huy, Pham, E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam)

    2014-10-15

    Silicon nanowires (NWs) with core–shell structures were prepared using the Vapor–Liquid–Solid (VLS) method. The wires have lengths of several hundreds of nanometers and diameters in the range of 30–50 nm. Generally, these wires are too large to exhibit the quantum confinement effect of excitons in Si nanocrystals. However, the photoluminescence (PL) and Raman spectra are similar to those of nanocrystalline silicon embedded in a SiO{sub 2} matrix, in which the recombination of quantum-confined excitons plays an important role. This effect occurs only when the average size of the silicon nanocrystals is smaller than 5 nm. To understand this discrepancy, TEM images of nanowires were obtained and analyzed. The results revealed that the cores of wires have a layered Si/SiO{sub 2} structure, in which the thickness of each layer is much smaller than its diameter. The temperature dependence of the PL intensity was recorded from 11 to 300 K; the result is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels. - Highlights: • The cores of the Si NWs have a layered Si/SiO{sub 2} structure. • The Si NWs were formed due to the phase separation of Si and SiO{sub 2} and the partial oxidization by residual oxygen. • Two processes, the reaction of Si and oxygen atoms and the combination between Si atoms, occur simultaneously. • The formation of the layered structures is associated with the self-limiting oxidation phenomenon in Si nanostructures.

  10. Synthesize of barium ferrite nanowire array by self-fabricated porous silicon template

    Science.gov (United States)

    Zheng, Hui; Han, Mangui; Deng, Jiangxia; Zheng, Liang; Wu, Jun; Deng, Longjiang; Qin, Huibin

    2014-08-01

    In this work, we synthesize barium ferrite (BaFe12O19) nanowire array in porous silicon template. The porous silicon templates are prepared via gold-assisted chemical etching method. The gold (Au) nanoparticles with mean diameter of 30 nm and distance of 100 nm were ordered on the surface of Si substrate through the Polystyrene (510000)-block-poly (2-vinylpyridine) (31000) (PS510000-b-P2VP31000) diblock copolymer. Porous silicon templates with mean diameter of 500 nm and distance between the pores of 500 nm were fabricated by two etching steps. BaFe12O19 nanowires with mean diameter of 200 nm were synthesized into a porous silicon template by a sol-gel method. Magnetic hysteresis loops show an isotropic feature of the BaFe12O19 nanowires array. The coercivity (Hc) and squareness ratio (Mr/Ms) of nanowire arrays are 2560 Oe and 0.6, respectively.

  11. Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

    Directory of Open Access Journals (Sweden)

    Britta Kämpken

    2012-07-01

    Full Text Available In this work the applicability of neopentasilane (Si(SiH34 as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of “liquid bright gold”, a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.

  12. Conductive-probe atomic force microscopy characterization of silicon nanowire

    Directory of Open Access Journals (Sweden)

    Yu Linwei

    2011-01-01

    Full Text Available Abstract The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs were investigated using a conductive-probe atomic force microscopy (AFM. Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V. Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

  13. Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy

    Science.gov (United States)

    Kolíbal, Miroslav; Novák, Libor; Shanley, Toby; Toth, Milos; Šikola, Tomáš

    2015-12-01

    Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate.Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains

  14. Ultra-High-Speed Optical Serial-to-Parallel Data Conversion in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Mulvad, Hans Christian Hansen; Palushani, Evarist; Hu, Hao;

    2011-01-01

    We demonstrate conversion from 64×10 Gbit/s OTDM to 25 GHz DWDM by time-domain optical Fourier transformation. Using a single silicon nanowire, 40 of 64 OTDM tributaries are simultaneously converted to DWDM channels within FEC limits.......We demonstrate conversion from 64×10 Gbit/s OTDM to 25 GHz DWDM by time-domain optical Fourier transformation. Using a single silicon nanowire, 40 of 64 OTDM tributaries are simultaneously converted to DWDM channels within FEC limits....

  15. Polarization Insensitive Wavelength Conversion Based on Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Peucheret, Christophe;

    2012-01-01

    We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements....

  16. Surface-Decorated Silicon Nanowires: A Route to High-ZT Thermoelectrics

    DEFF Research Database (Denmark)

    Markussen, Troels; Jauho, Antti-Pekka; Brandbyge, Mads

    2009-01-01

    Based on atomistic calculations of electron and phonon transport, we propose to use surface-decorated silicon nanowires for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying ideas: nanotrees and alkyl functionalized silicon nanowires. For both...... systems we find (i) that the phonon conductance is significantly reduced compared to the electronic conductance leading to high thermoelectric figure of merit ZT, and (ii) for ultrathin wires, surface decoration leads to significantly better performance than surface disorder....

  17. Polarization Insensitive One-to-Six WDM Multicasting in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Peucheret, Christophe;

    2012-01-01

    We present polarization insensitive one-to-six WDM multicasting based on nondegenerate four-wave mixing in a silicon nanowire with angled-pump scheme. Bit-error rate measurements are performed and error-free operation is achieved.......We present polarization insensitive one-to-six WDM multicasting based on nondegenerate four-wave mixing in a silicon nanowire with angled-pump scheme. Bit-error rate measurements are performed and error-free operation is achieved....

  18. Probing ultrafast carrier dynamics and nonlinear absorption and refraction in core-shell silicon nanowires

    OpenAIRE

    Kumar, Sunil; Khorasaninejad, M.; Adachi, MM; Karim, KS; Saini, SS; Sood, AK

    2012-01-01

    We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission spectroscopy at 3.15 eV and 1.57 eV photon energies. The complex behaviour of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where comp...

  19. Synthesis, characterizations, and applications of carbon nanotubes and silicon nanowires

    Science.gov (United States)

    Xiong, Guangyong

    Carbon nanotubes (CNTs) have received great attention because of their unique structure and promising applications in microelectronic devices such as field electron emitters. Silicon nanowires (SiNWs) are also very popular because Si is a well established electronic material. This thesis will present my effort on synthesis, characterizations, and applications of CNTs and SiNWs by thermal chemical vapor deposition (CVD) method. For CNTs growth, block copolymer micelles were used as a template to create large area arrays of metal nanoclusters as catalysts for patterned arrays, and Fe/Al/Fe sandwich film on single crystal magnesium oxide (MgO) substrate was used as the catalyst for growth of long length aligned CNTs by CVD. The factors that affect the structure and length of CNTs have been investigated. CNTs were also grown on etched Si substrate by PECVD method. Continuous dropwise condensation was achieved on a biomimetic two-tier texture with short CNTs deposited on micromachined pillars. Superhydrophobic condensation model was studied. For SiNWs growth, hydrogen gold tetrachloride was uniformly mixed into the salt and decomposed into gold nanoparticles at the growth temperature and acted as the catalyst particles to start the growth of Si nanowires. The as-grown Si nanowires are about 70--90 nm in diameter and up to 200 micrometers long. The salt was completely removed by water rinse after growth. Field emission of aligned CNTs grown on Si substrates and SiNWs on Si substrates and carbon clothes has been studied. A post growth annealing procedure has been found to drastically improve the field emission performance of these CNTs and SiNWs.

  20. Silicon nanowires for high-sensitivity glucose detection

    Science.gov (United States)

    Chen, Weiwei; Yao, Hui; Tzang, Chi Hung; Zhu, Junjie; Yang, Mengsu; Lee, Shuit-Tong

    2006-05-01

    Silicon nanowires (SiNWs) were investigated as supporting matrices for enzyme immobilization to construct glucose biosensors. Glucose oxidase was adsorbed onto SiNWs after different treatments, either as grown, HF etched, or carboxylic acid (COOH) functionalized. The amperometric biosensor with COOH-functionalized SiNWs performed the best with a detection limit of 0.01mM glucose (signal-to-noise ratio=3). For real-time detection of glucose, SiNW biosensor showed a linear response in the range of 0.1-15mM. This work demonstrates the utility of SiNWs as a biosensor component and provides a general method to modify the surface of semiconducting nanomaterials for potential biomedical applications.

  1. Thermal conductivity of silicon nanowires embedded on thermoelectric platforms

    Science.gov (United States)

    Choi, JinYong; Cho, Kyoungah; Yoon, Dae Sung; Kim, Sangsig

    2016-10-01

    In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06  ±  0.12 and 20.29  ±  0.77 W m-1 · K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.

  2. Platinum nanoparticle decorated silicon nanowires for efficient solar energy conversion.

    Science.gov (United States)

    Peng, Kui-Qing; Wang, Xin; Wu, Xiao-Ling; Lee, Shuit-Tong

    2009-11-01

    High-density aligned n-type silicon nanowire (SiNW) arrays decorated with discrete 5-10 nm platinum nanoparticles (PtNPs) have been fabricated by aqueous electroless Si etching followed by an electroless platinum deposition process. Coating of PtNPs on SiNW sidewalls yielded a substantial enhancement in photoconversion efficiency and an apparent energy conversion efficiency of up to 8.14% for the PtNP-decorated SiNW-based photoelectrochemical solar cell using a liquid electrolyte containing Br(-)/Br(2) redox couple. The results demonstrate PtNP-decorated SiNWs to be a promising hybrid system for solar energy conversion. PMID:19807069

  3. Impedance Analysis of Silicon Nanowire Lithium Ion Battery Anodes

    KAUST Repository

    Ruffo, Riccardo

    2009-07-02

    The impedance behavior of silicon nanowire electrodes has been investigated to understand the electrochemical process kinetics that influences the performance when used as a high-capacity anode in a lithium ion battery. The ac response was measured by using impedance spectroscopy in equilibrium conditions at different lithium compositions and during several cycles of charge and discharge in a half cell vs. metallic lithium. The impedance analysis shows the contribution of both surface resistance and solid state diffusion through the bulk of the nanowires. The surface process is dominated by a solid electrolyte layer (SEI) consisting of an inner, inorganic insoluble part and several organic compounds at the outer interface, as seen by XPS analysis. The surface resistivity, which seems to be correlated with the Coulombic efficiency of the electrode, grows at very high lithium contents due to an increase in the inorganic SEI thickness. We estimate the diffusion coefficient of about 2 × 10 -10 cm 2/s for lithium diffusion in silicon. A large increase in the electrode impedance was observed at very low lithium compositions, probably due to a different mechanism for lithium diffusion inside the wires. Restricting the discharge voltage to 0.7 V prevents this large impedance and improves the electrode lifetime. Cells cycled between 0.07 and 0.70 V vs. metallic lithium at a current density of 0.84 A/g (C/5) showed good Coulombic efficiency (about 99%) and maintained a capacity of about 2000 mAh/g after 80 cycles. © 2009 American Chemical Society.

  4. Growth mechanism and quantum confinement effect of silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    冯孙齐; 俞大鹏; 张洪洲; 白志刚; 丁彧; 杭青岭; 邹英华; 王晶晶

    1999-01-01

    The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for the growth of Si nanowires and the growth model for different morphologies of Si nanowires are described, and the quantum confinement effect of the Si nanowires is presented.

  5. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    KAUST Repository

    Ball, Jeremy

    2012-08-20

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  6. Effect of Fe metal on the growth of silicon oxide nanowires

    Institute of Scientific and Technical Information of China (English)

    Wei-long Liu; Shu-huei Hsieh; Ching-He Chen; Wen-jauh Chen

    2009-01-01

    Silicon oxide (SiOx) nanowires are generally grown on Si substrate under the catalysis of Au in N2 atmosphere at elevated temperatures. Because the price of Au metal is quite high, Fe metal is then used to replace a part of Au for catalyzing the growth of SiOx nanowires. The results show that the Fe film can be used as the diffusion barrier of Au. SiOx nanowires are grown on Au/Fe/Si substrate at 1030℃. Under the catalysis of Fe/Au, the efficiency for the growth of SiOx nanowires is promoted.

  7. Chemically Etched Silicon Nanowires as Anodes for Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    West, Hannah Elise [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This study focused on silicon as a high capacity replacement anode for Lithium-ion batteries. The challenge of silicon is that it expands ~270% upon lithium insertion which causes particles of silicon to fracture, causing the capacity to fade rapidly. To account for this expansion chemically etched silicon nanowires from the University of Maine were studied as anodes. They were built into electrochemical half-cells and cycled continuously to measure the capacity and capacity fade.

  8. Filter-free image sensor pixels comprising silicon nanowires with selective color absorption.

    Science.gov (United States)

    Park, Hyunsung; Dan, Yaping; Seo, Kwanyong; Yu, Young J; Duane, Peter K; Wober, Munib; Crozier, Kenneth B

    2014-01-01

    The organic dye filters of conventional color image sensors achieve the red/green/blue response needed for color imaging, but have disadvantages related to durability, low absorption coefficient, and fabrication complexity. Here, we report a new paradigm for color imaging based on all-silicon nanowire devices and no filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that their spectral sensitivities are governed by nanowire radius, and perform color imaging. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency. PMID:24588103

  9. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    Science.gov (United States)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  10. Silicon Nanowires for All-Optical Signal Processing in Optical Communication

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua;

    2012-01-01

    such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...... process. In the last four years, we investigated and demonstrated different ultra-fast all-optical nonlinear signal processing applications in silicon nanowires for optical time domain multiplexing (OTDM) systems, including wavelength conversion, signal regeneration, ultra-fast waveform sampling......, demultiplexing, and multicasting, which shows great potentials in the future optical communication systems. Although the strong light confinement in nanowires allows efficient nonlinear optical signal processing, it also leads to coupling difficulty between on-chip sub-micron nanowires and micro-size fibers due...

  11. Study of optical absorbance in porous silicon nanowires for photovoltaic applications

    KAUST Repository

    Charrier, Joël

    2013-10-01

    Porous silicon nanowires (PSiNWs) layers fabrication was reported. Reflectance spectra were measured as a function of the nanowire length and were inferior to 0.1% and a strong photoluminescence (PL) signal was measured from samples. Models based on cone shape of nanowires located in circular and rectangular bases were used to calculate the reflectance using the transfer matrix formalism (TMF) of PSiNWs layer. The modeling of the reflectance permits to explain this value by taking account into the shape of the nanowires and its porosity. Optical absorbance and transmission were also theoretically studied. The absorbance was superior to that obtained with silicon nanowires and the ultimate efficiency was about equal to 25% for normal incidence angle. These results could be applied to the potential application in low-cost and high efficiency PSiNWs based solar cells. © 2013 Elsevier B.V. All rights reserved.

  12. Performance Analysis of Silicon and Germanium Nanowire Transistor using Crystal Orientation and Oxide Thickness

    Directory of Open Access Journals (Sweden)

    P.Theres Mary

    2014-09-01

    Full Text Available Nanowire Transistors have attracted attention due to the probable high performance and excellent controllability of device current. In this paper, we investigate the performance analysis of nanowire transistors made of silicon and germanium materials. The nanowire transistor has a 3D distribution of electron density and electrostatic potential, therefore self-consistent 3D simulations are used. Nanowire (tool is 3D Poisson self-consistent simulator which can study the 3D transport in nanowire transistor considering phonon scattering based on the effective-mass approximation. The output characteristics of the nanowire transistors are studied in detail for both Si and Ge materials for different transport orientation (i.e., 100,110,111 and varying the oxide thickness.

  13. Fabrication and optical simulation of vertically aligned silicon nanowires

    Science.gov (United States)

    Hossain, M. K.; Salhi, B.; Mukhaimer, A. W.; Al-Sulaiman, F. A.

    2016-10-01

    Silicon nanowires (Si-NWs) have been considered widely as a perfect light absorber with strong evidence of enhanced optical functionalities. Here we report finite-difference time-domain simulations for Si-NWs to elucidate the key factors that determine enhanced light absorption, energy flow behavior, electric field profile, and excitons generation rate distribution. To avoid further complexity, a single Si-NW of cylindrical shape was modeled on c-Si and optimized to elucidate the aforementioned characteristics. Light absorption and energy flow distribution confirmed that Si-NW facilitates to confine photon absorption of several orders of enhancement whereas the energy flow is also distributed along the wire itself. With reference to electric field and excitons generation distribution it was revealed that Si-NW possesses the sites of strongest field distributions compared to those of flat silicon wafer. To realize the potential of Si-NWs-based thin film solar cell, a simple process was adopted to acquire vertically aligned Si-NWs grown on c-Si wafer. Further topographic characterizations were conducted through scanning electron microscope and tunneling electron microscope-coupled energy-dispersive spectroscopy.

  14. Prelithiated Silicon Nanowires as an Anode for Lithium Ion Batteries

    KAUST Repository

    Liu, Nian

    2011-08-23

    Silicon is one of the most promising anode materials for the next-generation high-energy lithium ion battery (LIB), while sulfur and some other lithium-free materials have recently shown high promise as cathode materials. To make a full battery out of them, either the cathode or the anode needs to be prelithiated. Here, we present a method for prelithiating a silicon nanowire (SiNW) anode by a facile self-discharge mechanism. Through a time dependence study, we found that 20 min of prelithiation loads ∼50% of the full capacity into the SiNWs. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies show that the nanostructure of SiNWs is maintained after prelithiation. We constructed a full battery using our prelithiated SiNW anode with a sulfur cathode. Our work provides a protocol for pairing lithium-free electrodes to make the next-generation high-energy LIB. © 2011 American Chemical Society.

  15. Fabrication of β-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer

    Directory of Open Access Journals (Sweden)

    Majid S. Al-Ruqeishi

    2016-06-01

    Full Text Available β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

  16. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Directory of Open Access Journals (Sweden)

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  17. Synthesis of porous silicon nano-wires and the emission of red luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Congli, Sun [School of Materials Science and Engineering, Sichuan University (China); Hao, Hu [National Engineering Research Center for Biomaterials, Sichuan University, Chengdu 610064, Sichuan (China); Huanhuan, Feng; Jingjing, Xu; Yu, Chen; Yong, Jin; Zhifeng, Jiao [School of Materials Science and Engineering, Sichuan University (China); Xiaosong, Sun, E-mail: sunxs@scu.edu.cn [School of Materials Science and Engineering, Sichuan University (China)

    2013-10-01

    This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO{sub 3} solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO{sub 3} solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H{sub 2}O{sub 2}- treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron–hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating.

  18. Surface trap mediated electronic transport in biofunctionalized silicon nanowires

    Science.gov (United States)

    Puppo, F.; Traversa, F. L.; Di Ventra, M.; De Micheli, G.; Carrara, S.

    2016-08-01

    Silicon nanowires (SiNWs), fabricated via a top-down approach and then functionalized with biological probes, are used for electrically-based sensing of breast tumor markers. The SiNWs, featuring memristive-like behavior in bare conditions, show, in the presence of biomarkers, modified hysteresis and, more importantly, a voltage memory component, namely a voltage gap. The voltage gap is demonstrated to be a novel and powerful parameter of detection thanks to its high-resolution dependence on charges in proximity of the wire. This unique approach of sensing has never been studied and adopted before. Here, we propose a physical model of the surface electronic transport in Schottky barrier SiNW biosensors, aiming at reproducing and understanding the voltage gap based behavior. The implemented model describes well the experimental I-V characteristics of the device. It also links the modification of the voltage gap to the changing concentration of antigens by showing the decrease of this parameter in response to increasing concentrations of the molecules that are detected with femtomolar resolution in real human samples. Both experiments and simulations highlight the predominant role of the dynamic recombination of the nanowire surface states, with the incoming external charges from bio-species, in the appearance and modification of the voltage gap. Finally, thanks to its compactness, and strict correlation with the physics of the nanodevice, this model can be used to describe and predict the I-V characteristics in other nanostructured devices, for different than antibody-based sensing as well as electronic applications.

  19. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  20. Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salem, B. [Laboratoire des Technologies de la Microelectronique (LTM)-UMR 5129 CNRS, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble (France)], E-mail: bassem.salem@cea.fr; Dhalluin, F.; Baron, T. [Laboratoire des Technologies de la Microelectronique (LTM)-UMR 5129 CNRS, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble (France); Jamgotchian, H.; Bedu, F.; Dallaporta, H. [CRMC-N, Faculte des Sciences de Luminy, Case 913, 13288 Marseille Cedex 09 (France); Gentile, P.; Pauc, N. [CEA-DRFMC/SiNaPS, 17 Rue des Martyrs, F-38054 Grenoble (France); Hertog, M.I. den; Rouviere, J.L. [CEA-DRFMC/SP2M/LEMMA GEM-minatec, 17 Rue des Martyrs, F-38054 Grenoble (France); Ferret, P. [CEA-Leti, DOPT, 17 Rue des Martyrs, F-38054 Grenoble (France)

    2009-03-15

    In this work, we present the elaboration and the electrical characterisation of undoped silicon nanowires (SiNWs) which are grown via vapour-liquid-solid mechanism using Au nucleation catalyst and SiH{sub 4} as the silicon source. The nanowires were investigated by high-resolution transmission electron microscopy. An electrical test structure was realized by a dispersion of the nanowires on SiO{sub 2}/Si substrate with photolithography pre-patterned Au/Ti microelectrodes. The connexion is made on a single nanowire using a cross beam plate form allowing scanning electron microscopy imaging and the deposition of tungsten wiring by focussed ion beam deposition. The current-voltage characteristics of the nanowires are linear which indicates an ohmic contact between tungsten allow and SiNWs. The total resistance of the nanowires increases from 135 M{omega} to 5 G{omega} when the diameter decreases from 190 to 130 nm. This effect is may be due to the reduction of the conductive inner volume of the nanowires and to charged defects at the Si-SiO{sub 2} interface if we assume that the contact resistance is constant. Moreover, gate-dependent current versus bias voltage measurement show that the nanowires exhibit a field effect response characteristic of a p-type semiconductor.

  1. Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process.

    Science.gov (United States)

    Ishiyama, Takeshi; Nakagawa, Shuhei; Wakamatsu, Toshiki

    2016-07-28

    The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core-shell structure that consists of a single-crystalline Si core along the direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

  2. Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

    Science.gov (United States)

    Ishiyama, Takeshi; Nakagawa, Shuhei; Wakamatsu, Toshiki

    2016-07-01

    The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core–shell structure that consists of a single-crystalline Si core along the direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

  3. Molecular dynamics simulation overcoming the finite size effects of thermal conductivity of bulk silicon and silicon nanowires

    Science.gov (United States)

    Hou, Chaofeng; Xu, Ji; Ge, Wei; Li, Jinghai

    2016-05-01

    Nonequilibrium molecular dynamics simulation has been a powerful tool for studying the thermophysical properties of bulk silicon and silicon nanowires. Nevertheless, usually limited by the capacity and capability of computational resources, the traditional longitudinal and transverse simulation sizes are evidently restricted in a narrow range much less than the experimental scales, which seriously hinders the exploration of the thermal properties. In this research, based on a powerful and efficient molecular dynamics (MD) simulation method, the computation of thermal conductivity beyond the known Casimir size limits is realized. The longitudinal dimensions of the simulations significantly exceed the micrometer scale. More importantly, the lateral characteristic sizes are much larger than 10 nanometers, explicitly comparable with the silicon nanowires fabricated and measured experimentally, whereas the traditional simulation size is several nanometers. The powerful virtual experimental measurement provided in our simulations achieves the direct prediction of the thermal conductivity of bulk silicon and real-scale silicon nanowires, and delineates the complete longitudinal size dependence of their thermal conductivities, especially at the elusive mesoscopic scale. Furthermore, the presented measurement paves an exciting and promising way to explore in depth the thermophysical properties of other bulk covalent solids and their low-dimensional structures, such as nanowires and nanosheets.

  4. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

  5. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution

    OpenAIRE

    Bao, Xiao-Qing; Cerqueira, M.F.; Alpuim, P.; Liu, Lifeng

    2015-01-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. L. F. Liu acknowledges the financial support by the FCT Investigator grant (IF/01595/2014).

  6. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. PMID:26050844

  7. Silicon Nanowire Sensors Enable Diagnosis of Patients via Exhaled Breath.

    Science.gov (United States)

    Shehada, Nisreen; Cancilla, John C; Torrecilla, Jose S; Pariente, Enrique S; Brönstrup, Gerald; Christiansen, Silke; Johnson, Douglas W; Leja, Marcis; Davies, Michael P A; Liran, Ori; Peled, Nir; Haick, Hossam

    2016-07-26

    Two of the biggest challenges in medicine today are the need to detect diseases in a noninvasive manner and to differentiate between patients using a single diagnostic tool. The current study targets these two challenges by developing a molecularly modified silicon nanowire field effect transistor (SiNW FET) and showing its use in the detection and classification of many disease breathprints (lung cancer, gastric cancer, asthma, and chronic obstructive pulmonary disease). The fabricated SiNW FETs are characterized and optimized based on a training set that correlate their sensitivity and selectivity toward volatile organic compounds (VOCs) linked with the various disease breathprints. The best sensors obtained in the training set are then examined under real-world clinical conditions, using breath samples from 374 subjects. Analysis of the clinical samples show that the optimized SiNW FETs can detect and discriminate between almost all binary comparisons of the diseases under examination with >80% accuracy. Overall, this approach has the potential to support detection of many diseases in a direct harmless way, which can reassure patients and prevent numerous unpleasant investigations. PMID:27383408

  8. Effects of lithium insertion on thermal conductivity of silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Wen [Department of Physics, Centre for Advanced 2D Material and Centre for Computational Science and Engineering, National University of Singapore, Singapore, Singapore 117546 (Singapore); Institute of High Performance Computing, A*STAR, Singapore, Singapore 138632 (Singapore); Zhang, Gang, E-mail: zhangg@ihpc.a-star.edu.sg [Institute of High Performance Computing, A*STAR, Singapore, Singapore 138632 (Singapore); Li, Baowen [Department of Physics, Centre for Advanced 2D Material and Centre for Computational Science and Engineering, National University of Singapore, Singapore, Singapore 117546 (Singapore); NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Kent Ridge, Singapore 119620 (Singapore); Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, 200092 Shanghai (China)

    2015-04-27

    Recently, silicon nanowires (SiNWs) have been applied as high-performance Li battery anodes, since they can overcome the pulverization and mechanical fracture during lithiation. Although thermal stability is one of the most important parameters that determine safety of Li batteries, thermal conductivity of SiNWs with Li insertion remains unclear. In this letter, using molecular dynamics simulations, we study room temperature thermal conductivity of SiNWs with Li insertion. It is found that compared with the pristine SiNW, there is as much as 60% reduction in thermal conductivity with 10% concentration of inserted Li atoms, while under the same impurity concentration the reduction in thermal conductivity of the mass-disordered SiNW is only 30%. With lattice dynamics calculations and normal mode decomposition, it is revealed that the phonon lifetimes in SiNWs decrease greatly due to strong scattering of phonons by vibrational modes of Li atoms, especially for those high frequency phonons. The observed strong phonon scattering phenomenon in Li-inserted SiNWs is similar to the phonon rattling effect. Our study serves as an exploration of thermal properties of SiNWs as Li battery anodes or weakly coupled with impurity atoms.

  9. Silicon nanowires as negative electrode for lithium-ion microbatteries

    Energy Technology Data Exchange (ETDEWEB)

    Laik, Barbara; Pereira-Ramos, Jean-Pierre [Institut de Chimie et des Materiaux Paris Est, ICMPE/GESMAT, UMR 7182 CNRS-Universite Paris XII, 2 rue Henri Dunant, 94320 Thiais (France); Eude, Laurent; Cojocaru, Costel Sorin; Pribat, Didier [Laboratoire de Physique des Interfaces et Couches Minces, LPICM, UMR 7647 Ecole Polytechnique-CNRS, Route de Saclay, 91128 Palaiseau Cedex (France); Rouviere, Emmanuelle [Laboratoire des Composants Hybrides, LCH, CEA-DRT/LITEN/DTNM, 17 rue des martyrs, 38054 Grenoble Cedex (France)

    2008-07-01

    The increasingly demand on secondary batteries with higher specific energy densities requires the replacement of the actual electrode materials. With a very high theoretical capacity (4200 mAh g{sup -1}) at low voltage, silicon is presented as a very interesting potential candidate as negative electrode for lithium-ion microbatteries. For the first time, the electrochemical lithium alloying/de-alloying process is proven to occur, respectively, at 0.15 V/0.45 V vs. Li{sup +}/Li with Si nanowires (SiNWs, 200-300 nm in diameter) synthesized by chemical vapour deposition. This new three-dimensional architecture material is well suited to accommodate the expected large volume expansion due to the reversible formation of Li-Si alloys. At present, stable capacity over ten to twenty cycles is demonstrated. The storage capacity is shown to increase with the growth temperature by a factor 3 as the temperature varies from 525 to 575 C. These results, showing an attractive working potential and large storage capacities, open up a new promising field of research. (author)

  10. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

    Science.gov (United States)

    Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

    2015-01-01

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density. PMID:26197105

  11. Functionalization of silicon nanowire surfaces with metal-organic frameworks

    KAUST Repository

    Liu, Nian

    2011-12-28

    Metal-organic frameworks (MOFs) and silicon nanowires (SiNWs) have been extensively studied due to their unique properties; MOFs have high porosity and specific surface area with well-defined nanoporous structure, while SiNWs have valuable one-dimensional electronic properties. Integration of the two materials into one composite could synergistically combine the advantages of both materials and lead to new applications. We report the first example of a MOF synthesized on surface-modified SiNWs. The synthesis of polycrystalline MOF-199 (also known as HKUST-1) on SiNWs was performed at room temperature using a step-by-step (SBS) approach, and X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and energy dispersive spectroscopy elemental mapping were used to characterize the material. Matching of the SiNW surface functional groups with the MOF organic linker coordinating groups was found to be critical for the growth. Additionally, the MOF morphology can by tuned by changing the soaking time, synthesis temperature and precursor solution concentration. This SiNW/MOF hybrid structure opens new avenues for rational design of materials with novel functionalities. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

  12. Preparation of silicon@silicon oxide core-shell nanowires from a silica precursor toward a high energy density Li-ion battery anode.

    Science.gov (United States)

    Zhang, Chuanjian; Gu, Lin; Kaskhedikar, Nitin; Cui, Guanglei; Maier, Joachim

    2013-12-11

    Bulk-quantity silicon@silicon oxide nanowires have been successfully synthesized via a facile high-temperature approach using environment-friendly silica mixed with titanium powders. It is confirmed that the obtained nanowires process a crystalline core and amorphous oxide sheath. The obtained nanowires grow along the [111] direction which catalyzed by spherical silicon@siilcon oxide nanoparticles. The unique one-dimensional structure and thin oxide sheath result in the favorable electrochemical performances, which may be beneficial to the high energy density silicon anode for lithium ion batteries. PMID:24229329

  13. Nanowire-integrated microporous silicon membrane for continuous fluid transport in micro cooling device

    International Nuclear Information System (INIS)

    We report an efficient passive micro pump system combining the physical properties of nanowires and micropores. This nanowire-integrated microporous silicon membrane was created to feed coolant continuously onto the surface of the wick in a micro cooling device to ensure it remains hydrated and in case of dryout, allow for regeneration of the system. The membrane was fabricated by photoelectrochemical etching to form micropores followed by hydrothermal growth of nanowires. This study shows a promising approach to address thermal management challenges for next generation electronic devices with absence of external power

  14. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu [ECE Department, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Kamins, T. I. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Wu, X.; Lockwood, D. J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

  15. Synthesis, Characterization and Kinetics of Epitaxial-Oriented Silicon Nanowire Arrays on Si Substrates

    Science.gov (United States)

    Wang, Z. L.; Bao, J. K.; Wan, Y. T.; Xia, W. W.; Wang, Y. W.; Sha, J.

    The fabrication of vertical-oriented, high aspect ratio silicon nanowires (SiNWs) with controllable density and length is of interest for the development of nanowire-based electronics and photovoltaic devices. Here we reported a both simple and economical method for synthesizing large-area epitaxial-oriented SiNW arrays, which was achieved on the Si (111) substrates by Au catalyzed vapor-liquid-solid mechanism using the conventional chemical vapor deposition furnace system. Their morphologies and microstructures were investigated with scanning electron microscopy and transmission electron microscopy, respectively. The results showed that most of nanowires were vertically grown on substrates, their density and length can be well controlled. As-grown SiNW is composed of a single crystalline silicon core and a thin amorphous silicon oxide coating layer. Furthermore, their growth kinetics was discussed in detail. It indicates that there are both the substrate-nanowire Si adatom surface diffusion and the slight radial growth during the upgrowth of nanowire, and besides, the migration of Au on the sidewall of nanowire was also found for such epitaxial-oriental SiNWs.

  16. Vertically aligned nanowires on flexible silicone using a supported alumina template prepared by pulsed anodization

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.

    2009-01-01

    Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using t...... this template with nanopores ending on a conducting underlayer, a high-density nanowire array can be simply grown by direct DCelectrodeposition on the top of the silicone rubber. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.......Carpets of vertically aligned nanowires on flexible substrates are successfully realized by a template method. Applying special pulsed anodization conditions, defect-free nanoporous alumina structures supported on polydimethylsiloxane (PDMS), a flexible silicone elastomer, are created. By using...

  17. Porous silicon nanowire arrays decorated by Ag nanoparticles for surface enhanced Raman scattering study

    Science.gov (United States)

    Su, L.; Xu, H. J.; Chan, Y. F.; Sun, X. M.

    2012-02-01

    A large scale and highly ordered Ag nanoparticle-decorated porous silicon nanowire array was fabricated for a uniform and reproducible surface-enhanced Raman scattering (SERS) substrate. The overall process for the proposed structure is simple and reliable with the use of only chemical etching and metal reduction processes. The SERS sensitivity of the novel substrate as low as 10-16 M for rhodamine 6G (R6G) and the Raman enhancement factor as high as 10^14 were obtained. The excellent SERS performances were mainly attributed to the strong local electromagnetic effect which is associated with the formation of large-quantity Ag nanoparticles on porous silicon nanowire array and the existence of semiconductor silicon nanowires. Significantly, the quadratic relation between the logarithmic concentrations and the logarithmic integrated Raman peak intensities provided quantitative detection of R6G. Our results open new possibilities for applying SERS to trace detection of low-concentration biomolecules.

  18. Fabrication of carbon-coated silicon nanowires and their application in dye-sensitized solar cells.

    Science.gov (United States)

    Kim, Junhee; Lim, Jeongmin; Kim, Minsoo; Lee, Hae-Seok; Jun, Yongseok; Kim, Donghwan

    2014-11-12

    We report the fabrication of silicon/carbon core/shell nanowire arrays using a two-step process, involving electroless metal deposition and chemical vapor deposition. In general, foreign shell materials that sheath core materials change the inherent characteristics of the core materials. The carbon coating functionalized the silicon nanowire arrays, which subsequently showed electrocatalytic activities for the reduction of iodide/triiodide. This was verified by cyclic voltammetry and electrochemical impedance spectroscopy. We employed the carbon-coated silicon nanowire arrays in dye-sensitized solar cells as counter electrodes. We optimized the carbon shells to maximize the photovoltaic performance of the resulting devices, and subsequently, a peak power conversion efficiency of 9.22% was achieved. PMID:25319204

  19. Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

    KAUST Repository

    Cui, Li-Feng

    2009-09-09

    We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

  20. Silicon-Nanowire Based Lithium Ion Batteries for Vehicles With Double the Energy Density

    Energy Technology Data Exchange (ETDEWEB)

    Stefan, Ionel [Amprius, Inc., Sunnyvale, CA (United States); Cohen, Yehonathan [Amprius, Inc., Sunnyvale, CA (United States)

    2015-03-31

    Amprius researched and developed silicon nanowire anodes. Amprius then built and delivered high-energy lithium-ion cells that met the project’s specific energy goal and exceeded the project’s energy density goal. But Amprius’ cells did not meet the project’s cycle life goal, suggesting additional manufacturing process development is required. With DOE support, Amprius developed a new anode material, silicon, and a new anode structure, nanowire. During the project, Amprius also began to develop a new multi-step manufacturing process that does not involve traditional anode production processes (e.g. mixing, drying and calendaring).

  1. Solution-Grown Silicon Nanowires for Lithium-Ion Battery Anodes

    KAUST Repository

    Chan, Candace K.

    2010-03-23

    Composite electrodes composed of silicon nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) method mixed with amorphous carbon or carbon nanotubes were evaluated as Li-ion battery anodes. Carbon coating of the silicon nanowires using the pyrolysis of sugar was found to be crucial for making good electronic contact to the material. Using multiwalled carbon nanotubes as the conducting additive was found to be more effective for obtaining good cycling behavior than using amorphous carbon. Reversible capacities of 1500 mAh/g were observed for 30 cycles. © 2010 American Chemical Society.

  2. Microstructures of the silicon carbide nanowires obtained by annealing the mechanically-alloyed amorphous powders

    International Nuclear Information System (INIS)

    Silicon, graphite and boron nitride powders were mechanically alloyed for 40 h in argon. The as-milled powders were annealed at 1700 °C in nitrogen for 30 min. The annealed powders are covered by a thick layer of gray–green SiC nanowires, which are 300 nm to 1000 nm in diameter and several hundred microns in length. Trace iron in the raw powders acts as a catalyst, promoting the V–L–S process. It follows that the actual substances contributing to the growth of the SiC nanowires may be silicon, graphite and the metal impurities in the raw powders. The results from HRTEM and XRD reveal that the products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. It is interestingly found that 6H–SiC coexists with 3C–SiC in one nodular nanowire. This novel structure may introduce periodic potential field along the longitudinal direction of the nanowires, and may find applications in the highly integrated optoelectronic devices. - Graphical abstract: Display Omitted - Highlights: • SiC nanowires were prepared by annealing the mechanically alloyed amorphous powders. • SiC nanowires are 300 nm to 1000 nm in diameter and several hundred microns in length. • The products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. • Trace Fe in the raw powders acts as a catalyst, promoting the V–L–S process. • 6H–SiC coexists with 3C–SiC in one nodular SiC nanowire

  3. Microstructures of the silicon carbide nanowires obtained by annealing the mechanically-alloyed amorphous powders

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Pengfei, E-mail: zhangpengfei1984@163.com; Li, Xinli

    2015-07-15

    Silicon, graphite and boron nitride powders were mechanically alloyed for 40 h in argon. The as-milled powders were annealed at 1700 °C in nitrogen for 30 min. The annealed powders are covered by a thick layer of gray–green SiC nanowires, which are 300 nm to 1000 nm in diameter and several hundred microns in length. Trace iron in the raw powders acts as a catalyst, promoting the V–L–S process. It follows that the actual substances contributing to the growth of the SiC nanowires may be silicon, graphite and the metal impurities in the raw powders. The results from HRTEM and XRD reveal that the products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. It is interestingly found that 6H–SiC coexists with 3C–SiC in one nodular nanowire. This novel structure may introduce periodic potential field along the longitudinal direction of the nanowires, and may find applications in the highly integrated optoelectronic devices. - Graphical abstract: Display Omitted - Highlights: • SiC nanowires were prepared by annealing the mechanically alloyed amorphous powders. • SiC nanowires are 300 nm to 1000 nm in diameter and several hundred microns in length. • The products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. • Trace Fe in the raw powders acts as a catalyst, promoting the V–L–S process. • 6H–SiC coexists with 3C–SiC in one nodular SiC nanowire.

  4. Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications.

    Science.gov (United States)

    M Nuzaihan, M N; Hashim, U; Md Arshad, M K; Rahim Ruslinda, A; Rahman, S F A; Fathil, M F M; Ismail, Mohd H

    2016-01-01

    A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications.

  5. Fabrication, electrical characterization and scanning gate microscopy of Schottky silicon nanowire devices

    Science.gov (United States)

    Melinte, Sorin; Iordanescu, Andra; Dutu, Constantin; Flandre, Denis; Faniel, Sebastien; Martins, Frederico; Hackens, Benoit; ICTM Team; IMCN Team

    2013-03-01

    We report the fabrication and the electrical characterization of Schottky silicon nanowire field effect transistors. Our devices are built with a top down approach on silicon-on-insulator wafers with (100) crystallographic orientation and 10 - 25 Ω.cm resistivity of the silicon top layer. The transistor's channel is assured by silicon nanowires patterned by electron beam lithography and wet etching. The nanowires have nominal cross sections down to 30 × 30nm2 . For example, platinum-silicon Schottky contacts are made by physical deposition of a platinum layer followed by an annealing at 500°C for 2 minutes in a N2 atmosphere. The devices are characterized at various temperatures by current-voltage measurements and scanning gate microscopy techniques. Varying the dimensionality and geometry of the contacts, the nature of metal-semiconductor junctions and the substrate strain, we get new insights into the influence of trapped charges at the Si -SiO2 interface on transport through SiO2-enclosed nanowires, at the nanometer scale.

  6. A silicon carbide nanowire field effect transistor for DNA detection

    Science.gov (United States)

    Fradetal, L.; Bano, E.; Attolini, G.; Rossi, F.; Stambouli, V.

    2016-06-01

    This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor–liquid–solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d–V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

  7. A silicon carbide nanowire field effect transistor for DNA detection.

    Science.gov (United States)

    Fradetal, L; Bano, E; Attolini, G; Rossi, F; Stambouli, V

    2016-06-10

    This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

  8. A new architecture for self-organized silicon nanowire growth integrated on a left angle 100 right angle silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Buttard, D. [Universite Joseph Fourier/IUT-1, Grenoble (France); David, T.; Gentile, P. [CEA-Grenoble/SiNaPS-MINATEC, Grenoble (France); Hertog, M. den; Rouviere, J.L. [CEA-Grenoble/LEMMA-MINATEC, Grenoble (France); Baron, T. [CNRS/LTM, Grenoble (France); Ferret, P. [CEA-DRT/CEA-Grenoble/DOPT, Grenoble (France)

    2008-07-15

    A lithography-independent method for achieving self-organized growth of silicon nanowires by means of a Chemical-Vapor-Deposition process is investigated using a nanoporous alumina template on a left angle 100 right angle oriented silicon substrate. The position of the nanowires is determined by the location of gold colloids, acting as catalysts, which are initially deposited at the bottom of the pores over large areas of the sample. The direction of growth is guided by the pore axis, which is perpendicular to the silicon substrate surface. Results from scanning and transmission electron microscopy are presented and discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires

    Directory of Open Access Journals (Sweden)

    Tang Zirong

    2011-01-01

    Full Text Available Abstract Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

  10. Six-wave mixing induced by free-carrier plasma in silicon nanowire waveguides

    CERN Document Server

    Zhou, Heng; Huang, Shu-Wei; Zhou, Linjie; Qiu, Kun; Wong, Chee Wei

    2016-01-01

    Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third-order Kerr nonlinearity, enabling salient and abundant four-wave-mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two-photon absorption generates high free-carrier densities, with corresponding fifth-order nonlinearity in the forms of free-carrier dispersion and free-carrier absorption. However, whether these fifth-order free-carrier nonlinear effects can lead to six-wave-mixing dynamics still remains an open question until now. Here we report the demonstration of free-carrier-induced six-wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six-wave-mixing efficiency and its higher sensitivity to pump power, are originally observed and verfied by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for d...

  11. Synthesis of β-SiC nanowires by ball milled nanoparticles of silicon and carbon

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Pengchao, E-mail: kangpc@hit.edu.cn [Materials Science and Engineering School, Harbin Institute of Technology, P.O.B. 433, Harbin 150001 (China); Zhang, Bin; Wu, Gaohui; Gou, Huasong; Chen, Guoqin; Jiang, Longtao [Materials Science and Engineering School, Harbin Institute of Technology, P.O.B. 433, Harbin 150001 (China); Mula, Suhrit [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

    2014-08-01

    Highlights: • The β-SiC nanowires were synthesized only use milled Si and C nanoparticles. • No catalyst was used in this process. • The grown mechanism of β-SiC nanowires is nanoparticles self-assembly and solid–solid reaction. • This notion, together with the nanowires synthesis are expected to apply opens up other semiconductor nanomaterials. - Abstract: In the present investigation, we report a simple and new technique to synthesize silicon carbide nanowires by high energy ball milling of silicon and carbon powders followed by annealing at elevated temperatures. The detailed structural analysis was carried out by X-ray diffraction, scanning and transmission electron microscopy, and FT-IR analysis. Nanocrystalline silicon particles were detected to be covered by amorphous carbon after milling. This typical structure was transformed to β-SiC nanowires during annealing by new growth mechanism. The β-SiC nanoparticles were found to be self-assembled one by one and formed a curly chain, and then rotated gradually in accordance to the same crystal orientation along the β-SiC [1 1 1] direction.

  12. 15% Power Conversion Efficiency from a Gated Nanotube/Silicon Nanowire Array Solar Cell

    Science.gov (United States)

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-03-01

    Despite their enhanced light trapping ability the performance of silicon nanowire array solar cells have, been stagnant with power conversion efficiencies barely breaking 10%. The problem is understood to be the consequence of a high photo-carrier recombination at the large surface area of the Si nanowire sidewalls. Here, by exploiting 1) electronic gating via an ionic liquid electrolyte to induce inversion in the n-type Si nanowires and 2) using a layer of single wall carbon nanotubes engineered to contact each nanowire tip and extract the minority carriers, we demonstrate silicon nanowire array solar cells with power conversion efficiencies of 15%. Our results allow for discrimination between the two principle means of avoiding front surface recombination: surface passivation and the use of local fields. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue a non-encapsulation based solution is also described. We gratefully acknowledge support from the National Science Foundation under ECCS-1232018.

  13. Growth Mechanism of Cubic-Silicon Carbide Nanowires

    Directory of Open Access Journals (Sweden)

    K. Y. Cheong

    2009-01-01

    Full Text Available Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1 diffusion of C/CO into Si substrate, (2 weakening of Si bond and atomic kick-out, (3 formation of Si-C in vapor phase, (4 formation of saturated SiC layer, (5 formation of pyramid-like SiC nanostructure, and (6 formation of SiC nanowires.

  14. IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

    NARCIS (Netherlands)

    Moh, T.S.Y.

    2013-01-01

    In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive

  15. Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires

    DEFF Research Database (Denmark)

    Cleary, Ciaran S.; Ji, Hua; Dailey, James M.;

    2013-01-01

    Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used t...

  16. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

    NARCIS (Netherlands)

    Masood, Muhammad Nasir; Carlen, Edwin T.; Berg, van den Albert

    2014-01-01

    Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

  17. Growth parameters and shape specific synthesis of silicon nanowires by the VLS method

    Energy Technology Data Exchange (ETDEWEB)

    Latu-Romain, Laurence; Mouchet, Celine [CEA-Grenoble, LITEN/DTNM/LCH (France); Cayron, Cyril [CEA-Grenoble, LITEN/DTH/Grenoble Electron Microscopy-Minatec (France); Rouviere, Emmanuelle; Simonato, Jean-Pierre, E-mail: jean-pierre.simonato@cea.f [CEA-Grenoble, LITEN/DTNM/LCH (France)

    2008-12-15

    In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported.

  18. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    Science.gov (United States)

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  19. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  20. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  1. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  2. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Sungho, E-mail: shwoo@dgist.ac.kr [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Hoon Jeong, Jae [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Soo Han, Yoon [Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongbuk 712-702 (Korea, Republic of); Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  3. Novel junctionless silicon-oxide-nitride-oxide-silicon memory devices with field-enhanced poly-Si nanowire structure

    Science.gov (United States)

    Chou, Chia-Hsin; Chan, Wei-Sheng; Wu, Chun-Yu; Lee, I.-Che; Liao, Ta-Chuan; Wang, Chao-Lung; Wang, Kuang-Yu; Cheng, Huang-Chung

    2015-08-01

    In this work, a novel gate-all-around (GAA) low-temperature poly-Si (LTPS) junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory device with a field-enhanced nanowire (NW) structure has been proposed to improve the programing/erasing (P/E) performance. Each nanowire has three sharp corners fabricated by a sidewall spacer formation technique to obtain high local electrical fields. Owing to the higher carrier concentration in the channel and the high local electrical field from the three sharp corners, such a JL SONOS memory device exhibits a significantly enhanced P/E speed, a larger memory window, and better data retention properties than a conventional inversion mode NW-channel memory device.

  4. Enhanced lithium ion battery cycling of silicon nanowire anodes by template growth to eliminate silicon underlayer islands.

    Science.gov (United States)

    Cho, Jeong-Hyun; Picraux, S Tom

    2013-01-01

    It is well-known that one-dimensional nanostructures reduce pulverization of silicon (Si)-based anode materials during Li ion cycling because they allow lateral relaxation. However, even with improved designs, Si nanowire-based structures still exhibit limited cycling stability for extended numbers of cycles, with the specific capacity retention with cycling not showing significant improvements over commercial carbon-based anode materials. We have found that one important reason for the lack of long cycling stability can be the presence of milli- and microscale Si islands which typically form under nanowire arrays during their growth. Stress buildup in these Si island underlayers with cycling results in cracking, and the loss of specific capacity for Si nanowire anodes, due to progressive loss of contact with current collectors. We show that the formation of these parasitic Si islands for Si nanowires grown directly on metal current collectors can be avoided by growth through anodized aluminum oxide templates containing a high density of sub-100 nm nanopores. Using this template approach we demonstrate significantly enhanced cycling stability for Si nanowire-based lithium-ion battery anodes, with retentions of more than ~1000 mA·h/g discharge capacity over 1100 cycles.

  5. Enhanced lithium ion battery cycling of silicon nanowire anodes by template growth to eliminate silicon underlayer islands.

    Science.gov (United States)

    Cho, Jeong-Hyun; Picraux, S Tom

    2013-01-01

    It is well-known that one-dimensional nanostructures reduce pulverization of silicon (Si)-based anode materials during Li ion cycling because they allow lateral relaxation. However, even with improved designs, Si nanowire-based structures still exhibit limited cycling stability for extended numbers of cycles, with the specific capacity retention with cycling not showing significant improvements over commercial carbon-based anode materials. We have found that one important reason for the lack of long cycling stability can be the presence of milli- and microscale Si islands which typically form under nanowire arrays during their growth. Stress buildup in these Si island underlayers with cycling results in cracking, and the loss of specific capacity for Si nanowire anodes, due to progressive loss of contact with current collectors. We show that the formation of these parasitic Si islands for Si nanowires grown directly on metal current collectors can be avoided by growth through anodized aluminum oxide templates containing a high density of sub-100 nm nanopores. Using this template approach we demonstrate significantly enhanced cycling stability for Si nanowire-based lithium-ion battery anodes, with retentions of more than ~1000 mA·h/g discharge capacity over 1100 cycles. PMID:24144166

  6. Dynamic characterization of silicon nanowires using a terahertz optical asymmetric demultiplexer-based pump-probe scheme

    DEFF Research Database (Denmark)

    Ji, Hua; Cleary, C. S.; Dailey, J. M.;

    2012-01-01

    Dynamic phase and amplitude all-optical responses of silicon nanowires are characterized using a terahertz optical asymmetric demultiplexer (TOAD) based pump-probe scheme. Ultra-fast recovery is observed for moderate pump powers....

  7. CMOS-Compatible Silicon-Nanowire-Based Coulter Counter for Cell Enumeration.

    Science.gov (United States)

    Chen, Yu; Guo, Jinhong; Muhammad, Hamidullah; Kang, Yuejun; Ary, Sunil K

    2016-02-01

    A silicon-nanowire-based Coulter counter has been designed and fabricated for particle/cell enumeration. The silicon nanowire was fabricated in a fully complementary metal-oxide-semiconductor (CMOS)-compatible process and used as a field effect transistor (FET) device. The Coulter counter device worked on the principle of potential change detection introduced by the passing of microparticles/cells through a sensing channel. Device uniformity was confirmed by scanning electron microscopy and transmission electron microscopy. Current-voltage measurement showed the high sensitivity of the nanowire FET device to the surface potential change. The results revealed that the silicon-nanowire-based Coulter counter can differentiate polystyrene beads with diameters of 8 and 15 μm. Michigan Cancer Foundation-7 (MCF-7) cells have been successfully counted to validate the device. A fully CMOS-compatible fabrication process can help the device integration and facilitate the development of sensor arrays for high throughput application. With appropriate sample preparation steps, it is also possible to expand the work to applications such as rare-cells detection.

  8. Versatile Particle-Based Route to Engineer Vertically Aligned Silicon Nanowire Arrays and Nanoscale Pores.

    Science.gov (United States)

    Elnathan, Roey; Isa, Lucio; Brodoceanu, Daniel; Nelson, Adrienne; Harding, Frances J; Delalat, Bahman; Kraus, Tobias; Voelcker, Nicolas H

    2015-10-28

    Control over particle self-assembly is a prerequisite for the colloidal templating of lithographical etching masks to define nanostructures. This work integrates and combines for the first time bottom-up and top-down approaches, namely, particle self-assembly at liquid-liquid interfaces and metal-assisted chemical etching, to generate vertically aligned silicon nanowire (VA-SiNW) arrays and, alternatively, arrays of nanoscale pores in a silicon wafer. Of particular importance, and in contrast to current techniques, including conventional colloidal lithography, this approach provides excellent control over the nanowire or pore etching site locations and decouples nanowire or pore diameter and spacing. The spacing between pores or nanowires is tuned by adjusting the specific area of the particles at the liquid-liquid interface before deposition. Hence, the process enables fast and low-cost fabrication of ordered nanostructures in silicon and can be easily scaled up. We demonstrate that the fabricated VA-SiNW arrays can be used as in vitro transfection platforms for transfecting human primary cells.

  9. CMOS-Compatible Silicon-Nanowire-Based Coulter Counter for Cell Enumeration.

    Science.gov (United States)

    Chen, Yu; Guo, Jinhong; Muhammad, Hamidullah; Kang, Yuejun; Ary, Sunil K

    2016-02-01

    A silicon-nanowire-based Coulter counter has been designed and fabricated for particle/cell enumeration. The silicon nanowire was fabricated in a fully complementary metal-oxide-semiconductor (CMOS)-compatible process and used as a field effect transistor (FET) device. The Coulter counter device worked on the principle of potential change detection introduced by the passing of microparticles/cells through a sensing channel. Device uniformity was confirmed by scanning electron microscopy and transmission electron microscopy. Current-voltage measurement showed the high sensitivity of the nanowire FET device to the surface potential change. The results revealed that the silicon-nanowire-based Coulter counter can differentiate polystyrene beads with diameters of 8 and 15 μm. Michigan Cancer Foundation-7 (MCF-7) cells have been successfully counted to validate the device. A fully CMOS-compatible fabrication process can help the device integration and facilitate the development of sensor arrays for high throughput application. With appropriate sample preparation steps, it is also possible to expand the work to applications such as rare-cells detection. PMID:26799578

  10. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    KAUST Repository

    Chan, Candace K.

    2009-04-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous LixSi compound. At potentials <50 mV, a structural transformation occurs. In studies on micron-sized particles previously reported in the literature, this transformation is a crystallization to a metastable Li15Si4 phase. X-ray diffraction measurements on the Si nanowires, however, show that they are amorphous, suggesting that a different amorphous phase (LiySi) is formed. Lithium is removed from this phase in the discharge to form amorphous silicon. We have found that limiting the voltage in the charge to 70 mV results in improved efficiency and cyclability compared to charging to 10 mV. This improvement is due to the suppression of the transformation at low potentials, which alloys for reversible cycling of amorphous silicon nanowires. © 2008 Elsevier B.V. All rights reserved.

  11. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-01

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors. PMID:26906427

  12. Effect of diborane on the microstructure of boron-doped silicon nanowires

    Science.gov (United States)

    Pan, Ling; Lew, Kok-Keong; Redwing, Joan M.; Dickey, Elizabeth C.

    2005-04-01

    Boron-doped silicon (Si) nanowires, with nominal diameters of 80 nm, were grown via the vapor-liquid-solid (VLS) mechanism using gold (Au) as a catalyst and silane (SiH 4) and diborane (B 2H 6) as precursors. The microstructure of the nanowires was studied by scanning electron microscopy, transmission electron microscopy and electron energy-loss spectroscopy. At lower B 2H 6 partial pressure and thus lower doping levels (⩽1×10 18 cm -3), most of the boron-doped Si nanowires exhibited high crystallinity. At higher B 2H 6 partial pressure (˜2×10 19 cm -3 doping level), the majority of the wires exhibited a core-shell structure with an amorphous Si shell (20-30 nm thick) surrounding a crystalline Si core. Au nanoparticles on the outer surface of the nanowires were also observed in structures grown with high B/Si gas ratios. The structural changes are believed to result from an increase in the rate of Si thin-film deposition on the outer surface of the nanowire at high B 2H 6 partial pressure, which produces the amorphous coating and also causes an instability at the liquid/solid interface resulting in a loss of Au during nanowire growth.

  13. Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection

    Directory of Open Access Journals (Sweden)

    P. Pignalosa

    2011-09-01

    Full Text Available Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm and wide angle (from normal incidence to 60º antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

  14. Broadband Polarization-Insensitive Wavelength Conversion Based on Non-Degenerate Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua;

    2012-01-01

    We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements....

  15. Wavelength Conversion with Large Signal-Idler Separation using Discrete Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Hu, Hao; Peucheret, Christophe; Pu, Minhao;

    2012-01-01

    We have demonstrated wavelength conversion over 468 nm based on discrete bands phase matching in a silicon nanowire. CW light is converted from 1258 nm to 1726 nm with a CW pump at 1455 nm.......We have demonstrated wavelength conversion over 468 nm based on discrete bands phase matching in a silicon nanowire. CW light is converted from 1258 nm to 1726 nm with a CW pump at 1455 nm....

  16. Growth and properties of In(Ga)As nanowires on silicon

    International Nuclear Information System (INIS)

    In this thesis the integration of III-V semiconductor nanowires on silicon (Si) platform by molecular beam epitaxy (MBE) is investigated. All nanowires are grown without the use of foreign catalysts such as Au to achieve high purity material. First, InAs nanowires are grown in a self-assembled manner on SiOx-masked Si(111) where pinholes in the silicon oxide serve as nucleation spots for the nanowires. This leads to the growth of vertically aligned, (111)-oriented nanowires with hexagonal cross-section. Based on this simple process, the entire growth parameter window is investigated for InAs nanowires, revealing an extremely large growth temperature range from 380 C to 580 C and growth rates as large as 6 μ/h. Complex quantitative in-situ line-of-sight quadrupole mass spectrometry experiments during nanowire growth and post-growth thermal decomposition studies support these findings and indicate a very high thermal stability up to >540 C for InAs nanowires. Furthermore, the influence of the As/In ratio on the nanowire growth is studied revealing two distinct growth regimes, i.e., an In-rich regime for lower As fluxes and an As-rich regime for larger As fluxes, where the latter shows characteristic saturation of the nanowire aspect ratio. For the catalyst-free growth, detailed investigation of the growth mechanism is performed via a combination of in-situ reflection high-energy electron diffraction (RHEED) and ex-situ scanning and transmission electron microscopy (SEM,TEM). An abrupt onset of nanowire growth is observed in RHEED intensity and in-plane lattice parameter evolution. Furthermore, completely droplet-free nanowires, continuous radial growth, constant vertical growth rate and growth interruption experiments suggest a vapor-solid growth mode for all investigated nanowire samples. Moreover, site-selective (positioned) growth of InAs nanowires on pre-patterned SiO2 masked Si(111) substrates is demonstrated which is needed for ultimate control of nanowire

  17. Growth and properties of In(Ga)As nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hertenberger, Simon

    2012-10-15

    In this thesis the integration of III-V semiconductor nanowires on silicon (Si) platform by molecular beam epitaxy (MBE) is investigated. All nanowires are grown without the use of foreign catalysts such as Au to achieve high purity material. First, InAs nanowires are grown in a self-assembled manner on SiO{sub x}-masked Si(111) where pinholes in the silicon oxide serve as nucleation spots for the nanowires. This leads to the growth of vertically aligned, (111)-oriented nanowires with hexagonal cross-section. Based on this simple process, the entire growth parameter window is investigated for InAs nanowires, revealing an extremely large growth temperature range from 380 C to 580 C and growth rates as large as 6 μ/h. Complex quantitative in-situ line-of-sight quadrupole mass spectrometry experiments during nanowire growth and post-growth thermal decomposition studies support these findings and indicate a very high thermal stability up to >540 C for InAs nanowires. Furthermore, the influence of the As/In ratio on the nanowire growth is studied revealing two distinct growth regimes, i.e., an In-rich regime for lower As fluxes and an As-rich regime for larger As fluxes, where the latter shows characteristic saturation of the nanowire aspect ratio. For the catalyst-free growth, detailed investigation of the growth mechanism is performed via a combination of in-situ reflection high-energy electron diffraction (RHEED) and ex-situ scanning and transmission electron microscopy (SEM,TEM). An abrupt onset of nanowire growth is observed in RHEED intensity and in-plane lattice parameter evolution. Furthermore, completely droplet-free nanowires, continuous radial growth, constant vertical growth rate and growth interruption experiments suggest a vapor-solid growth mode for all investigated nanowire samples. Moreover, site-selective (positioned) growth of InAs nanowires on pre-patterned SiO{sub 2} masked Si(111) substrates is demonstrated which is needed for ultimate control of

  18. The influence of H2O2 concentration to the structure of silicon nanowire growth by metal-assisted chemical etching

    Science.gov (United States)

    Omar, Hafsa; Jani, Abdul Mutalib Md.; Rusop, Mohamad; Abdullah, Saifollah

    2016-07-01

    A simple and low cost method to produce well aligned silicon nanowires at large areas using Ag-assisted chemical etching at room temperature were presented. The structure of silicon nanowires growth by metal-assisted chemical etching was observed. Prior to the etching, the silicon nanowires were prepared by electroless metal deposited (EMD) in solution containing hydrofluoric acid and hydrogen peroxide in Teflon vessel. The silver particle was deposited on substrate by immersion in hydrofluoric acid and silver nitrate solution for sixty second. The silicon nanowires were growth in different hydrogen peroxide concentration which are 0.3M, 0.4M, 0.5M and 0.6M and 0.7M.The influence of hydrogen peroxide concentration to the formation of silicon nanowires was studied. The morphological properties of silicon nanowires were investigated using field emission scanning electron microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDS).

  19. Absorption enhancement in silicon nanowire-optical nanoantenna system for photovoltaic applications

    Science.gov (United States)

    Robak, Elżbieta; Grześkiewicz, Bartłomiej; Kotkowiak, Michał

    2014-11-01

    The rapidly growing green energy sector has prompted the search for new solutions to increase the performance of solar cells. In this area there is still room for the silicon-based photovoltaic, although the main problem is to find a way to increase the efficiency of the silicon solar cells, at the lowest possible cost. In this work we investigate the influence of a gold bowtie nanoantenna on the absorption profile of silicon nanowire. Because of the energy band gap and low effective absorption cross section, bulk silicon absorbs rather poorly in longer wavelengths of visible light and near-infrared range. Our calculations with frequency domain solver show the absorption boost in nanowire at long-wavelengths due to the coupling of the large local near-field of metallic bowtie nanoantenna to the semiconductor layer. The enhancement was observed at various levels although it was correlated with the shift of localized surface plasmon resonance thus making it dependent on the bowtie geometry. The results suggest that by incorporating metallic nanostructures as well as nanoparticles to the nanowire system, the performance of photovoltaic device can be improved thanks to greater generation of a electron-hole pairs.

  20. Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Uchida, Takafumi, E-mail: takafumi-uchida@frontier.hokudai.ac.jp; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo [Graduate School of Information Science and Technology, Hokkaido University, Sapporo, 060-0814 Japan (Japan); Fujiwara, Akira [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, 243-0198 Japan (Japan)

    2015-11-15

    Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.

  1. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  2. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    International Nuclear Information System (INIS)

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations

  3. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    International Nuclear Information System (INIS)

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  4. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    Energy Technology Data Exchange (ETDEWEB)

    He Ying, E-mail: yinghe@staff.shu.edu.c [Shanghai University, Department of Polymer Materials, School of Materials Science and Engineering (China); Wang Junan [Shanghai University, Institute of Materials, School of Materials Science and Engineering (China); Pei Changlong; Song Jizhong; Zhu Di; Chen Jie [Shanghai University, Department of Polymer Materials, School of Materials Science and Engineering (China)

    2010-10-15

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  5. The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor.

    Science.gov (United States)

    Choi, Hyoun Mo; Shin, Dong Jae; Lee, Jung Han; Mo, Hyun-Sun; Park, Tae Jung; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan; Park, Jisun

    2016-05-01

    Our study investigates differences in sensitivity of dry and wet environment in the field of biosensing experiment in detail and depth. The sensitivity of biosensing varies by means of surrounding conditions of silicon nanowire field effect transistor (SiNW FET). By examining charged polymer reaction in the silicon nanowire transistor (SiNW), we have discovered that the threshold voltage (V(T)) shift and change of subthreshold slope (SS) in wet environment are smaller than that of the air. Furthermore, we analyzed the sensitivity through modifying electrolyte concentration in the wet condition, and confirmed that V(T) shift increases in low concentration condition of phosphate buffered saline (PBS) due to the Debye length. We believe that the results we have found in this study would be the cornerstone in contributing to advanced biosensing experiment in the future.

  6. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

    Directory of Open Access Journals (Sweden)

    Wen-Chung Chang

    2016-06-01

    Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

  7. The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor.

    Science.gov (United States)

    Choi, Hyoun Mo; Shin, Dong Jae; Lee, Jung Han; Mo, Hyun-Sun; Park, Tae Jung; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan; Park, Jisun

    2016-05-01

    Our study investigates differences in sensitivity of dry and wet environment in the field of biosensing experiment in detail and depth. The sensitivity of biosensing varies by means of surrounding conditions of silicon nanowire field effect transistor (SiNW FET). By examining charged polymer reaction in the silicon nanowire transistor (SiNW), we have discovered that the threshold voltage (V(T)) shift and change of subthreshold slope (SS) in wet environment are smaller than that of the air. Furthermore, we analyzed the sensitivity through modifying electrolyte concentration in the wet condition, and confirmed that V(T) shift increases in low concentration condition of phosphate buffered saline (PBS) due to the Debye length. We believe that the results we have found in this study would be the cornerstone in contributing to advanced biosensing experiment in the future. PMID:27483843

  8. Critical Role of Diels–Adler Adducts to Realise Stretchable Transparent Electrodes Based on Silver Nanowires and Silicone Elastomer

    Science.gov (United States)

    Heo, Gaeun; Pyo, Kyoung-Hee; Lee, Da Hee; Kim, Youngmin; Kim, Jong-Woong

    2016-05-01

    This paper presents the successful fabrication of a transparent electrode comprising a sandwich structure of silicone/Ag nanowires (AgNWs)/silicone equipped with Diels–Alder (DA) adducts as crosslinkers to realise highly stable stretchability. Because of the reversible DA reaction, the crosslinked silicone successfully bonds with the silicone overcoat, which should completely seal the electrode. Thus, any surrounding liquid cannot leak through the interfaces among the constituents. Furthermore, the nanowires are protected by the silicone cover when they are stressed by mechanical loads such as bending, folding, and stretching. After delicate optimisation of the layered silicone/AgNW/silicone sandwich structure, a stretchable transparent electrode which can withstand 1000 cycles of 50% stretching–releasing with an exceptionally high stability and reversibility was fabricated. This structure can be used as a transparent strain sensor; it possesses a strong piezoresistivity with a gauge factor greater than 11.

  9. Tunable electronic properties of silicon nanowires under strain and electric bias

    Directory of Open Access Journals (Sweden)

    Alexis Nduwimana

    2014-07-01

    Full Text Available The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

  10. High Kerr nonlinearity hydrogenated amorphous silicon nanowires with low two photon absorption and high optical stability

    CERN Document Server

    Grillet, C; Monat, C; Grosse, P; Bakir, B Ben; Menezo, S; Fedeli, J M; Moss, David J

    2014-01-01

    We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re({\\gamma}) = 1200W-1m-1. We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm2) over timescales of at least an hour.

  11. Stable, highly nonlinear amorphous silicon nanowires with very low nonlinear absorption

    CERN Document Server

    Carletti, Luca; Grossec, Phillipe; Ben-Bakir, Badhise; Menezoc, Sylvie; Fedelic, Jean-Marc; Moss, David J; Monat, Christelle

    2014-01-01

    The nonlinear characteristics of hydrogenated amorphous silicon nanowires are experimentally demonstrated. A high nonlinear refractive index, n2=1.19 x 10-17 m2/W, combined with a low two-photon absorption, 0.14 x 10-11 m/W, resulted in a high nonlinear FOM of 5.5. Furthermore, systematic studies over hours of operational time under 2.2W of pulse peak power revealed no degradation of the optical response.

  12. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire

    OpenAIRE

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. W...

  13. Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a silicon nanowire

    Science.gov (United States)

    Casas-Bedoya, Alvaro; Morrison, Blair; Pagani, Mattia; Marpaung, David; Eggleton, Benjamin J.

    2015-09-01

    We demonstrate the first functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip SBS gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high performance RF photonic filter.

  14. Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a Silicon nanowire

    CERN Document Server

    Casas-Bedoya, Alvaro; Pagani, Mattia; Marpaung, David; Eggleton, Benjamin J

    2015-01-01

    We demonstrate the first functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip SBS gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high performance RF photonic filter.

  15. Probing ultrafast carrier dynamics, nonlinear absorption and refraction in core–shell silicon nanowires

    Indian Academy of Sciences (India)

    Sunil Kumar; M Khorasaninejad; M M Adachi; K S Karim; S S Saini; A K Sood

    2012-09-01

    We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time resolved differential reflectivity and transmission spectroscopy at 3.15 eV and 1.57 eV photon energies. The complex behaviour of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where competing effects of state-filling and photoinduced absorption govern the carrier dynamics. Faster relaxation rates are observed on increasing the photogenerated carrier density. Independent experimental results on crystalline silicon-on-sapphire (SOS) help us in separating the contributions from the carrier dynamics in crystalline core and the amorphous regions in the nanowire samples. Further, single-beam z-scan nonlinear transmission experiments at 1.57 eV in both open- and close-aperture configurations yield two-photon absorption coefficient (∼3 cm/GW) and nonlinear refraction coefficient (−2.5 × 10−4 cm2 /GW).

  16. Ultra-low reflection porous silicon nanowires for solar cell applications

    KAUST Repository

    Najar, Adel

    2012-01-01

    High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. ©2012 Optical Society of America.

  17. Nanoparticles prepared from porous silicon nanowires for bio-imaging and sonodynamic therapy.

    Science.gov (United States)

    Osminkina, Liubov A; Sivakov, Vladimir A; Mysov, Grigory A; Georgobiani, Veronika A; Natashina, Ulyana А; Talkenberg, Florian; Solovyev, Valery V; Kudryavtsev, Andrew A; Timoshenko, Victor Yu

    2014-01-01

    Evaluation of cytotoxicity, photoluminescence, bio-imaging, and sonosensitizing properties of silicon nanoparticles (SiNPs) prepared by ultrasound grinding of porous silicon nanowires (SiNWs) have been investigated. SiNWs were formed by metal (silver)-assisted wet chemical etching of heavily boron-doped (100)-oriented single crystalline silicon wafers. The prepared SiNWs and aqueous suspensions of SiNPs exhibit efficient room temperature photoluminescence (PL) in the spectral region of 600 to 1,000 nm that is explained by the radiative recombination of excitons confined in small silicon nanocrystals, from which SiNWs and SiNPs consist of. On the one hand, in vitro studies have demonstrated low cytotoxicity of SiNPs and possibilities of their bio-imaging applications. On the other hand, it has been found that SiNPs can act as efficient sensitizers of ultrasound-induced suppression of the viability of Hep-2 cancer cells.

  18. Electrical detection of dengue virus (DENV) DNA oligomer using silicon nanowire biosensor with novel molecular gate control.

    Science.gov (United States)

    Nuzaihan M N, M; Hashim, U; Md Arshad, M K; Kasjoo, S R; Rahman, S F A; Ruslinda, A R; Fathil, M F M; Adzhri, R; Shahimin, M M

    2016-09-15

    In this paper, a silicon nanowire biosensor with novel molecular gate control has been demonstrated for Deoxyribonucleic acid (DNA) detection related to dengue virus (DENV). The silicon nanowire was fabricated using the top-down nanolithography approach, through nanostructuring of silicon-on-insulator (SOI) layers achieved by combination of the electron-beam lithography (EBL), plasma dry etching and size reduction processes. The surface of the fabricated silicon nanowire was functionalized by means of a three-step procedure involving surface modification, DNA immobilization and hybridization. This procedure acts as a molecular gate control to establish the electrical detection for 27-mers base targets DENV DNA oligomer. The electrical detection is based on the changes in current, resistance and conductance of the sensor due to accumulation of negative charges added by the immobilized probe DNA and hybridized target DNA. The sensitivity of the silicon nanowire biosensors attained was 45.0µAM(-1), which shows a wide-range detection capability of the sensor with respect to DNA. The limit of detection (LOD) achieved was approximately 2.0fM. The demonstrated results show that the silicon nanowire has excellent properties for detection of DENV with outstanding repeatability and reproducibility performances. PMID:27107147

  19. Thermal Test of an Improved Platform for Silicon Nanowire-Based Thermoelectric Micro-generators

    Science.gov (United States)

    Calaza, C.; Fonseca, L.; Salleras, M.; Donmez, I.; Tarancón, A.; Morata, A.; Santos, J. D.; Gadea, G.

    2016-03-01

    This work reports on an improved design intended to enhance the thermal isolation between the hot and cold parts of a silicon-based thermoelectric microgenerator. Micromachining techniques and silicon on insulator substrates are used to obtain a suspended silicon platform surrounded by a bulk silicon rim, in which arrays of bottom-up silicon nanowires are integrated later on to join both parts with a thermoelectric active material. In previous designs the platform was linked to the rim by means of bulk silicon bridges, used as mechanical support and holder for the electrical connections. Such supports severely reduce platform thermal isolation and penalise the functional area due to the need of longer supports. A new technological route is planned to obtain low thermal conductance supports, making use of a particular geometrical design and a wet bulk micromachining process to selectively remove silicon shaping a thin dielectric membrane. Thermal conductance measurements have been performed to analyse the influence of the different design parameters of the suspended platform (support type, bridge/membrane length, separation between platform and silicon rim,) on overall thermal isolation. A thermal conductance reduction from 1.82 mW/K to 1.03 mW/K, has been obtained on tested devices by changing the support type, even though its length has been halved.

  20. Localisation of silicon nanowires grown by UHV-CVD in (111)-oriented apertures opened in Si (001)

    International Nuclear Information System (INIS)

    In this paper, we have investigated an alternative method to obtain well-organized silicon nanowires grown by vapor-liquid-solid process. We have studied the influence of the droplet size on the growth direction of nanowires on plain wafers. By using self-organized Au droplets grown by molecular beam epitaxy on vicinal Si(111) surface with a 20 miscut towards the [11-2] crystallographic direction, we have obtained well organized gold droplets along the steps with small size dispersion. The growth of Si nanowires from these droplets allows defining a critical diameter for changing the Si nanowires growth direction. When the gold droplet diameter is larger than 100 nm, Si nanowires exhibit a orientation and remain free of structural defects. The localisation of Si nanowires was performed in nanoscale silicon seeds formed by modified local oxidation of silicon process. This approach, based on a simple and reliable method, enable the organisation of Si nanowires with orientation on Si(001) substrates.

  1. Electrowetting properties of atomic layer deposited Al{sub 2}O{sub 3} decorated silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Rajkumar, K.; Rajavel, K. [Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu (India); Cameron, D. C. [ASTRaL, Lappeenranta University of Technology, Mikkeli (Finland); current address Miktech Oy, Mikkeli (Finland); Mangalaraj, D. [Department of NanoScience and Technology, Bharathiar University, Coimbatore, Tamil Nadu (India); Rajendrakumar, R. T., E-mail: buc@edu.in [Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu (India); Department of NanoScience and Technology, Bharathiar University, Coimbatore, Tamil Nadu (India)

    2015-06-24

    This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al{sub 2}O{sub 3} as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al{sub 2}O{sub 3} films of 10nm thickness were conformally deposited over silicon nanowires. Al{sub 2}O{sub 3} dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.

  2. Coated Silicon Nanowires as Anodes in Lithium Ion Batteries

    OpenAIRE

    Watts, David James

    2014-01-01

    Even though it has the highest known theoretical specific capacity of any material (~3600 mAh/g), silicon has limited use as an anode in lithium ion batteries due to the mechanical instability caused by the large volume expansion that occurs upon Li insertion. This volume expansion not only contributes to mechanical instability in the active silicon, but it also contributes to mechanical instability in the solid electrolyte interphase (SEI), a film formed at the end of the first lithiation s...

  3. Growth and properties of In(Ga)As nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hertenberger, Simon

    2012-10-15

    In this thesis the integration of III-V semiconductor nanowires on silicon (Si) platform by molecular beam epitaxy (MBE) is investigated. All nanowires are grown without the use of foreign catalysts such as Au to achieve high purity material. First, InAs nanowires are grown in a self-assembled manner on SiO{sub x}-masked Si(111) where pinholes in the silicon oxide serve as nucleation spots for the nanowires. This leads to the growth of vertically aligned, (111)-oriented nanowires with hexagonal cross-section. Based on this simple process, the entire growth parameter window is investigated for InAs nanowires, revealing an extremely large growth temperature range from 380 C to 580 C and growth rates as large as 6 μ/h. Complex quantitative in-situ line-of-sight quadrupole mass spectrometry experiments during nanowire growth and post-growth thermal decomposition studies support these findings and indicate a very high thermal stability up to >540 C for InAs nanowires. Furthermore, the influence of the As/In ratio on the nanowire growth is studied revealing two distinct growth regimes, i.e., an In-rich regime for lower As fluxes and an As-rich regime for larger As fluxes, where the latter shows characteristic saturation of the nanowire aspect ratio. For the catalyst-free growth, detailed investigation of the growth mechanism is performed via a combination of in-situ reflection high-energy electron diffraction (RHEED) and ex-situ scanning and transmission electron microscopy (SEM,TEM). An abrupt onset of nanowire growth is observed in RHEED intensity and in-plane lattice parameter evolution. Furthermore, completely droplet-free nanowires, continuous radial growth, constant vertical growth rate and growth interruption experiments suggest a vapor-solid growth mode for all investigated nanowire samples. Moreover, site-selective (positioned) growth of InAs nanowires on pre-patterned SiO{sub 2} masked Si(111) substrates is demonstrated which is needed for ultimate control of

  4. Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

    Science.gov (United States)

    Liu-Hong, Ma; Wei-Hua, Han; Hao, Wang; Qi-feng, Lyu; Wang, Zhang; Xiang, Yang; Fu-Hua, Yang

    2016-06-01

    Silicon junctionless nanowire transistor (JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate. The performances of the transistor, i.e., current drive, threshold voltage, subthreshold swing (SS), and electron mobility are evaluated. The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K. The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to 50 K, which is attributed to the electron transport through one-dimensional (1D) subbands formed in the nanowire. Besides, the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1, implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties. This approach provides a potential application for nanoscale device patterning. Project supported by the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126) and the National Basic Research Program of China (Grant No. 2010CB934104).

  5. Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

    International Nuclear Information System (INIS)

    We have analyzed the effective oxide thickness (EOT) of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional SiO2 gate insulator with a material that has a much higher dielectric constant (high-k) gate, materials like Si3N4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier (Natori) approach, which is composed of several matlab scripts. Our results show that hafnium oxide (HfO2) gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of HfO2 is found to be 0.4 nm. (semiconductor devices)

  6. Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin [Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Li Tie [State Key Laboratory of Transducer Technology, Shanghai Institute of Micro-system and Information Technology, Shanghai 200050 (China)], E-mail: jinzh@zju.edu.cn

    2008-04-30

    Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min{sup -1}, while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method.

  7. Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET.

    Science.gov (United States)

    Voisin, B; Maurand, R; Barraud, S; Vinet, M; Jehl, X; Sanquer, M; Renard, J; De Franceschi, S

    2016-01-13

    Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz. PMID:26599868

  8. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

    KAUST Repository

    Heo, Junseok

    2013-10-01

    GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.

  9. Enhanced Photoelectrical Response of Hydrogenated Amorphous Silicon Single-Nanowire Solar Cells by Front-Opening Crescent Design

    OpenAIRE

    Yang, Zhenhai; Cao, Guoyang; Shang, Aixue; Lei, Dang Yuan; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

    2016-01-01

    We report an approach for substantially enhancing the light-trapping and photoconversion efficiency of hydrogenated amorphous silicon (a-Si:H) single-nanowire solar cells (SNSCs) by engineering the cross section of the nanowire from circular into a front-opening crescent shape. The proposed SNSCs show a broadband and highly tunable optical absorption compared to the conventional circular counterparts under both transverse electric and transverse magnetic incidences, enabling an enhancement ra...

  10. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Science.gov (United States)

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films. PMID:27455379

  11. Atomistic simulations of the tensile and melting behavior of silicon nanowires

    Institute of Scientific and Technical Information of China (English)

    Jing Yuhang; Meng Qingyuan; Zhao Wei

    2009-01-01

    Molecular dynamics simulations with Stillinger-Weber potential are used to study the tensile and melting behavior of single-crystalline silicon nanowires (SiNWs). The tensile tests show that the tensile behavior of the SiNWs is strongly dependent on the simulation temperature, the strain rate, and the diameter of the nanowires.For a given diameter, the critical load significantly decreases as the temperature increases and also as the strain rate decreases. Additionally, the critical load increases as the diameter increases. Moreover, the melting tests demonstrate that both melting temperature and melting heat of the SiNWs decrease with decreasing diameter and length, due to the increase in surface energy. The melting process of SiNWs with increasing temperature is also investigated.

  12. Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration.

    Science.gov (United States)

    Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Jeon, Chang-Hoon; Jeon, Gwang-Jae; Han, Jin-Woo; Kim, Choong-Ki; Park, Sang-Jae; Lee, Hee Chul; Choi, Yang-Kyu

    2016-01-01

    The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3-dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy. PMID:26782708

  13. Silicon nanowires used as the anode of a lithium-ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Prosini, Pier Paolo [ENEA, Italian National Agency for New Technologies, Energy and Sustainable Economic Development, Casaccia Research Centre, Via Anguillarese 301, 00123 Santa Maria di Galeria, Rome (Italy); DInESto, Drive the Innovation in Energy Storage, Via Provincie, 04012 Cisterna di Latina (Italy); Rufoloni, Alessandro; Rondino, Flaminia; Santoni, Antonino [ENEA, Italian National Agency for New Technologies, Energy and Sustainable Economic Development, Frascati Research Centre, via E. Fermi 45, 00044 Frascati (Italy)

    2015-06-23

    In this paper the synthesis and characterization of silicon nanowires to be used as the anode of a lithium-ion battery cell are reported. The nanowires were synthesized by CVD and characterized by SEM. The nanostructured material was used as an electrode in a lithium cell and its electrochemical properties were investigated by galvanostatic charge/discharge cycles at C/10 rate as a function of the cycle number and at various rates as a function of the charge current. The electrode was then coupled with a LiFePO{sub 4} cathode to fabricate a lithium-ion battery cell and the cell performance evaluated by galvanostatic charge/discharge cycles.

  14. Sensitive and Selective Detection of HIV-1 RRE RNA Using Vertical Silicon Nanowire Electrode Array.

    Science.gov (United States)

    Lee, Jaehyung; Hong, Min-Ho; Han, Sanghun; Na, Jukwan; Kim, Ilsoo; Kwon, Yong-Joon; Lim, Yong-Beom; Choi, Heon-Jin

    2016-12-01

    In this study, HIV-1 Rev response element (RRE) RNA was detected via an Au-coated vertical silicon nanowire electrode array (VSNEA). The VSNEA was fabricated by combining bottom-up and top-down approaches and then immobilized by artificial peptides for the recognition of HIV-1 RRE. Differential pulse voltammetry (DPV) analysis was used to measure the electrochemical response of the peptide-immobilized VSNEA to the concentration and types of HIV-1 RRE RNA. DPV peaks showed linearity to the concentration of RNA with a detection limit down to 1.513 fM. It also showed the clear different peaks to the mutated HIV-1 RRE RNA. The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes. PMID:27448026

  15. Enhanced field emission from ZnO nanowires grown on a silicon nanoporous pillar array

    Science.gov (United States)

    Xu, Hai Jun; Chan, Yu Fei; Su, Lei; Li, De Yao; Sun, Xiao Ming

    2010-12-01

    A large scale heterostructure array of ZnO nanowires/silicon nanoporous pillar array (Si-NPA) was prepared by a self-catalytic thermal evaporation and vapor-phase transport method, and an ultrahigh field emission current density of 1.55 mA cm-2 was obtained under an operating electric field of 4.0 V μm-1, with a low turn-on field of 1.65 V μm-1. The enhancement factor calculated according to the Fowler-Nordheim theory was ˜3141. The excellent field emission performance was attributed to the unique structure of ZnO/Si-NPA, especially the formation of ZnO nanowires on regular Si pillar array. Our work indicated that ZnO/Si-NPA might be an ideal candidate cathode of potential applications in flat panel displays and high brightness electron sources.

  16. Sensitive and Selective Detection of HIV-1 RRE RNA Using Vertical Silicon Nanowire Electrode Array

    Science.gov (United States)

    Lee, Jaehyung; Hong, Min-Ho; Han, Sanghun; Na, Jukwan; Kim, Ilsoo; Kwon, Yong-Joon; Lim, Yong-beom; Choi, Heon-Jin

    2016-07-01

    In this study, HIV-1 Rev response element (RRE) RNA was detected via an Au-coated vertical silicon nanowire electrode array (VSNEA). The VSNEA was fabricated by combining bottom-up and top-down approaches and then immobilized by artificial peptides for the recognition of HIV-1 RRE. Differential pulse voltammetry (DPV) analysis was used to measure the electrochemical response of the peptide-immobilized VSNEA to the concentration and types of HIV-1 RRE RNA. DPV peaks showed linearity to the concentration of RNA with a detection limit down to 1.513 fM. It also showed the clear different peaks to the mutated HIV-1 RRE RNA. The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes.

  17. Organic Bioelectronic Tools for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    Susanne Löffler

    2015-11-01

    Full Text Available Organic bioelectronics forms the basis of conductive polymer tools with great potential for application in biomedical science and medicine. It is a rapidly growing field of both academic and industrial interest since conductive polymers bridge the gap between electronics and biology by being electronically and ionically conductive. This feature can be employed in numerous ways by choosing the right polyelectrolyte system and tuning its properties towards the intended application. This review highlights how active organic bioelectronic surfaces can be used to control cell attachment and release as well as to trigger cell signaling by means of electrical, chemical or mechanical actuation. Furthermore, we report on the unique properties of conductive polymers that make them outstanding materials for labeled or label-free biosensors. Techniques for electronically controlled ion transport in organic bioelectronic devices are introduced, and examples are provided to illustrate their use in self-regulated medical devices. Organic bioelectronics have great potential to become a primary platform in future bioelectronics. We therefore introduce current applications that will aid in the development of advanced in vitro systems for biomedical science and of automated systems for applications in neuroscience, cell biology and infection biology. Considering this broad spectrum of applications, organic bioelectronics could lead to timely detection of disease, and facilitate the use of remote and personalized medicine. As such, organic bioelectronics might contribute to efficient healthcare and reduced hospitalization times for patients.

  18. Raman study of phase transformation from diamond structure to wurtzite structure in the silicon nanowires

    Science.gov (United States)

    Shukla, A. K.; Dixit, Saurabh

    2016-07-01

    Hexagonal silicon has emerged as an exciting material due to its novel vibrational and electronic properties. Synthesis of the wurtzite silicon nanowires (w-SiNWs) is studied here using metal assisted chemical etching (MACE) technique. Stress induced in the SiNWs during wet chemical etching is attributed to formation of the w-SiNWs. Presence of the w-SiNWs is revealed by first-order and second-order Raman spectra. The effect of variation of deposition time of silver (catalyst) is explicitly studied for growth of w-SiNWs. The deposition time enhances the density of SiNWs in an island of vertically aligned SiNWs. Absorption coefficient studies of the w-SiNWs are also conducted using UV–vis spectroscopy as a function of deposition time. Increase in the absorption coefficient in SiNWs is noticed with increasing deposition time. The prominent quantum confinement along with stress and porosity is shown to be mainly responsible for the transformation from diamond structure to wurtzite structure in the silicon nanowires.

  19. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  20. Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

    Science.gov (United States)

    Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

    2016-12-01

    Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

  1. Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

    Science.gov (United States)

    Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

    2016-12-01

    Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer. PMID:26729219

  2. All-Optical Wavelength Conversion of a High-Speed RZ-OOK Signal in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael;

    2011-01-01

    All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits.......All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits....

  3. Wavelength conversion of 80 Gb/s RZ-DPSK Pol-MUX signals in a silicon nanowire

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Peucheret, Christophe; Oxenløwe, Leif Katsuo;

    2014-01-01

    All-optical wavelength conversion of 80 Gb/s RZ-DPSK polarization multiplexed signals is demonstrated in a silicon nanowire using an angled-pump scheme. The quality of the converted signal is characterized through BER measurements for the first time.......All-optical wavelength conversion of 80 Gb/s RZ-DPSK polarization multiplexed signals is demonstrated in a silicon nanowire using an angled-pump scheme. The quality of the converted signal is characterized through BER measurements for the first time....

  4. All-Optical 40 Gbit/s Regenerative Wavelength Conversion Based on Cross-Phase Modulation in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Hu, Hao; Ji, Hua;

    2013-01-01

    We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration.......We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration....

  5. Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles.

    Science.gov (United States)

    Liu, Kong; Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Wang, Zhanguo

    2013-02-18

    Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture our hybrid cells. Both short-circuit current and external quantum efficiency measurements show an enhancement in optical absorption of organic layer, especially at lower wavelengths.

  6. Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires.

    Science.gov (United States)

    Fukata, Naoki; Takiguchi, Ryo; Ishida, Shinya; Yokono, Shigeki; Hishita, Shunichi; Murakami, Kouichi

    2012-04-24

    Recrystallization of silicon nanowires (SiNWs) after ion implantation strongly depends on the ion doses and species. Full amorphization by high-dose implantation induces polycrystal structures in SiNWs even after high-temperature annealing, with this tendency more pronounced for heavy ions. Hot-implantation techniques dramatically suppress polycrystallization in SiNWs, resulting in reversion to the original single-crystal structures and consequently high reactivation rate of dopant atoms. In this study, the chemical bonding states and electrical activities of implanted boron and phosphorus atoms were evaluated by Raman scattering and electron spin resonance, demonstrating the formation of p- and n-type SiNWs.

  7. Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

    Directory of Open Access Journals (Sweden)

    Wanjie Xu

    2015-01-01

    Full Text Available A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

  8. Interfering Heralded Single Photons from Two Separate Silicon Nanowires Pumped at Different Wavelengths

    Directory of Open Access Journals (Sweden)

    Xiang Zhang

    2016-08-01

    Full Text Available Practical quantum photonic applications require on-demand single photon sources. As one possible solution, active temporal and wavelength multiplexing has been proposed to build an on-demand single photon source. In this scheme, heralded single photons are generated from different pump wavelengths in many temporal modes. However, the indistinguishability of these heralded single photons has not yet been experimentally confirmed. In this work, we achieve 88% ± 8% Hong–Ou–Mandel quantum interference visibility from heralded single photons generated from two separate silicon nanowires pumped at different wavelengths. This demonstrates that active temporal and wavelength multiplexing could generate indistinguishable heralded single photons.

  9. Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a silicon nanowire.

    Science.gov (United States)

    Casas-Bedoya, Alvaro; Morrison, Blair; Pagani, Mattia; Marpaung, David; Eggleton, Benjamin J

    2015-09-01

    We demonstrate the first, to the best of our knowledge, functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip stimulated Brillouin scattering gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high-performance RF photonic filter. PMID:26368735

  10. Improving the cycling stability of silicon nanowire anodes with conducting polymer coatings

    KAUST Repository

    Yao, Yan

    2012-01-01

    For silicon nanowires (Si NWs) to be used as a successful high capacity lithium-ion battery anode material, improvements in cycling stability are required. Here we show that a conductive polymer surface coating on the Si NWs improves cycling stability; coating with PEDOT causes the capacity retention after 100 charge-discharge cycles to increase from 30% to 80% over bare NWs. The improvement in cycling stability is attributed to the conductive coating maintaining the mechanical integrity of the cycled Si material, along with preserving electrical connections between NWs that would otherwise have become electrically isolated during volume changes. © 2012 The Royal Society of Chemistry.

  11. Balanced ternary addition using a gated silicon nanowire

    Science.gov (United States)

    Mol, J. A.; van der Heijden, J.; Verduijn, J.; Klein, M.; Remacle, F.; Rogge, S.

    2011-12-01

    Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a function of the potential of the single electron transistor island. Mapping logical, ternary inputs to the three gates controlling the potential of the single electron transistor island allows us to perform complex, inherently ternary operations, on a single transistor.

  12. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Science.gov (United States)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and Gʹ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  13. Lithium Insertion In Silicon Nanowires: An ab Initio Study

    KAUST Repository

    Zhang, Qianfan

    2010-09-08

    The ultrahigh specific lithium ion storage capacity of Si nanowires (SiNWs) has been demonstrated recently and has opened up exciting opportunities for energy storage. However, a systematic theoretical study on lithium insertion in SiNWs remains a challenge, and as a result, understanding of the fundamental interaction and microscopic dynamics during lithium insertion is still lacking. This paper focuses on the study of single Li atom insertion into SiNWs with different sizes and axis orientations by using full ab initio calculations. We show that the binding energy of interstitial Li increases as the SiNW diameter grows. The binding energies at different insertion sites, which can be classified as surface, intermediate, and core sites, are quite different. We find that surface sites are energetically the most favorable insertion positions and that intermediate sites are the most unfavorable insertion positions. Compared with the other growth directions, the [110] SiNWs with different diameters always present the highest binding energies on various insertion locations, which indicates that [110] SiNWs are more favorable by Li doping. Furthermore, we study Li diffusion inside SiNWs. The results show that the Li surface diffusion has a much higher chance to occur than the surface to core diffusion, which is consistent with the experimental observation that the Li insertion in SiNWs is layer by layer from surface to inner region. After overcoming a large barrier crossing surface-to-intermediate region, the diffusion toward center has a higher possibility to occur than the inverse process. © 2010 American Chemical Society.

  14. Tuning the electronic band-gap of fluorinated 3C-silicon carbide nanowires

    Science.gov (United States)

    Miranda Durán, Álvaro; Trejo Baños, Alejandro; Pérez, Luis Antonio; Cruz Irisson, Miguel

    The possibility of control and modulation of the electronic properties of silicon carbide nanowires (SiCNWs) by varying the wire diameter is well known. SiCNWs are particularly interesting and technologically important, due to its electrical and mechanical properties, allowing the development of materials with specific electronic features for the design of stable and robust electronic devices. Tuning the band gap by chemical surface passivation constitutes a way for the modification of the electronic band gap of these nanowires. We present, the structural and electronic properties of fluorinated SiCNWs, grown along the [111] crystallographic direction, which are investigated by first principles. We consider nanowires with six diameters, varying from 0.35 nm to 2.13 nm, and eight random covering schemes including fully hydrogen- and fluorine terminated ones. Gibbs free energy of formation and electronic properties were calculated for the different surface functionalization schemes and diameters considered. The results indicate that the stability and band gap of SiCNWs can be tuned by surface passivation with fluorine atoms This work was supported by CONACYT infrastructure project 252749 and UNAM-DGAPA-PAPIIT IN106714. A.M. would like to thank for financial support from CONACyT-Retención. Computing resources from proyect SC15-1-IR-27 of DGTIC-UNAM are acknowledged.

  15. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around.

    Science.gov (United States)

    Guerfi, Youssouf; Larrieu, Guilhem

    2016-12-01

    Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed. PMID:27094824

  16. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

    Science.gov (United States)

    Guerfi, Youssouf; Larrieu, Guilhem

    2016-04-01

    Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed.

  17. Novel Size and Surface Oxide Effects in Silicon Nanowires as Lithium Battery Anodes

    KAUST Repository

    McDowell, Matthew T.

    2011-09-14

    With its high specific capacity, silicon is a promising anode material for high-energy lithium-ion batteries, but volume expansion and fracture during lithium reaction have prevented implementation. Si nanostructures have shown resistance to fracture during cycling, but the critical effects of nanostructure size and native surface oxide on volume expansion and cycling performance are not understood. Here, we use an ex situ transmission electron microscopy technique to observe the same Si nanowires before and after lithiation and have discovered the impacts of size and surface oxide on volume expansion. For nanowires with native SiO2, the surface oxide can suppress the volume expansion during lithiation for nanowires with diameters <∼50 nm. Finite element modeling shows that the oxide layer can induce compressive hydrostatic stress that could act to limit the extent of lithiation. The understanding developed herein of how volume expansion and extent of lithiation can depend on nanomaterial structure is important for the improvement of Si-based anodes. © 2011 American Chemical Society.

  18. Self-bridging of vertical silicon nanowires and a universal capacitive force model for spontaneous attraction in nanostructures.

    Science.gov (United States)

    Sun, Zhelin; Wang, Deli; Xiang, Jie

    2014-11-25

    Spontaneous attractions between free-standing nanostructures have often caused adhesion or stiction that affects a wide range of nanoscale devices, particularly nano/microelectromechanical systems. Previous understandings of the attraction mechanisms have included capillary force, van der Waals/Casimir forces, and surface polar charges. However, none of these mechanisms universally applies to simple semiconductor structures such as silicon nanowire arrays that often exhibit bunching or adhesions. Here we propose a simple capacitive force model to quantitatively study the universal spontaneous attraction that often causes stiction among semiconductor or metallic nanostructures such as vertical nanowire arrays with inevitably nonuniform size variations due to fabrication. When nanostructures are uniform in size, they share the same substrate potential. The presence of slight size differences will break the symmetry in the capacitive network formed between the nanowires, substrate, and their environment, giving rise to electrostatic attraction forces due to the relative potential difference between neighboring wires. Our model is experimentally verified using arrays of vertical silicon nanowire pairs with varied spacing, diameter, and size differences. Threshold nanowire spacing, diameter, or size difference between the nearest neighbors has been identified beyond which the nanowires start to exhibit spontaneous attraction that leads to bridging when electrostatic forces overcome elastic restoration forces. This work illustrates a universal understanding of spontaneous attraction that will impact the design, fabrication, and reliable operation of nanoscale devices and systems. PMID:25329454

  19. In Situ X-ray Diffraction Studies of (De)lithiation Mechanism in Silicon Nanowire Anodes

    KAUST Repository

    Misra, Sumohan

    2012-06-26

    Figure Persented: Silicon is a promising anode material for Li-ion batteries due to its high theoretical specific capacity. From previous work, silicon nanowires (SiNWs) are known to undergo amorphorization during lithiation, and no crystalline Li-Si product has been observed. In this work, we use an X-ray transparent battery cell to perform in situ synchrotron X-ray diffraction on SiNWs in real time during electrochemical cycling. At deep lithiation voltages the known metastable Li 15Si 4 phase forms, and we show that avoiding the formation of this phase, by modifying the SiNW growth temperature, improves the cycling performance of SiNW anodes. Our results provide insight on the (de)lithiation mechanism and a correlation between phase evolution and electrochemical performance for SiNW anodes. © 2012 American Chemical Society.

  20. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

    KAUST Repository

    Guo, Wei

    2011-01-01

    High density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.

  1. Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

    Science.gov (United States)

    Gonchar, Kirill A.; Zubairova, Alsu A.; Schleusener, Alexander; Osminkina, Liubov A.; Sivakov, Vladimir

    2016-08-01

    Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5-15 % in the spectral region λ < 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500-1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

  2. Morphology, structure and magnetic study of permalloy films electroplated on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Lamrani, S. [Centre de Recherche en Technologie des Semi-Conducteurs pour l’énergétique, 2 Bd Frantz Fanon, BP 140 les 7 merveilles, Algiers (Algeria); Université Mouloud Mammeri, TiziOuzou 15000 (Algeria); Guittoum, A., E-mail: aguittoum@gmail.com [Nuclear Research Centre of Algiers, 2 Bd Frantz Fanon, BP399 Alger-Gare, Algiers (Algeria); Schäfer, R. [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Inst. f. Metallic Materials, Helmholtz str. 20, D-01069 Dresden (Germany); Hemmous, M. [Nuclear Research Centre of Algiers, 2 Bd Frantz Fanon, BP399 Alger-Gare, Algiers (Algeria); Neu, V.; Pofahl, S. [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Inst. f. Metallic Materials, Helmholtz str. 20, D-01069 Dresden (Germany); Hadjersi, T. [Centre de Recherche en Technologie des Semi-Conducteurs pour l’énergétique, 2 Bd Frantz Fanon, BP 140 les 7 merveilles, Algiers (Algeria); Benbrahim, N. [Université Mouloud Mammeri, TiziOuzou 15000 (Algeria)

    2015-12-15

    We report the effect of deposition potential on the morphology, structure and magnetic properties of Ni{sub 80}Fe{sub 20} (Permalloy: Py) deposits, elaborated by electrochemical process onto silicon nanowires (SiNWs). The morphology of SiNWs and Py/SiNWs were performed with scanning electron microscopy (SEM). The SEM micrographs reveal the formation of SiNWs and clearly show a change in the morphology with the deposition potential. The analysis of X-ray diffraction spectra shows a change in the texture with the deposition potential. The grain size, the lattice parameter and the strain were studied as a function of the deposition potentials. From hysteresis loops, we have shown that the magnetization easy axis is the plane of the samples. - Highlights: • Permalloy deposits were elaborated by electrochemical process onto silicon nanowires (SiNWs). • SEM micrographs reveal the formation of SiNWs and clearly show a change in the morphology with the deposition potential. • The magnetization easy axis was found to be in the plane of samples.

  3. Probing protein complexes inside living cells using a silicon nanowire-based pull-down assay

    Science.gov (United States)

    Choi, Sojoong; Kim, Hyunju; Kim, So Yeon; Yang, Eun Gyeong

    2016-06-01

    Most proteins perform their functions as interacting complexes. Here we propose a novel method for capturing an intracellular protein and its interacting partner out of living cells by utilizing intracellular access of antibody modified vertical silicon nanowire arrays whose surface is covered with a polyethylene glycol layer to prevent strong cell adhesion. Such a feature facilitates the removal of cells by simple washing, enabling subsequent detection of a pulled-down protein and its interacting partner, and further assessment of a drug-induced change in the interacting complex. Our new SiNW-based tool is thus suitable for authentication of protein networks inside living cells.Most proteins perform their functions as interacting complexes. Here we propose a novel method for capturing an intracellular protein and its interacting partner out of living cells by utilizing intracellular access of antibody modified vertical silicon nanowire arrays whose surface is covered with a polyethylene glycol layer to prevent strong cell adhesion. Such a feature facilitates the removal of cells by simple washing, enabling subsequent detection of a pulled-down protein and its interacting partner, and further assessment of a drug-induced change in the interacting complex. Our new SiNW-based tool is thus suitable for authentication of protein networks inside living cells. Electronic supplementary information (ESI) available: Materials, experimental methods and Fig. S1-S8. See DOI: 10.1039/c6nr00171h

  4. Selectively deposited silver coatings on gold-capped silicon nanowires for surface-enhanced Raman spectroscopy.

    Science.gov (United States)

    Becker, M; Stelzner, Th; Steinbrück, A; Berger, A; Liu, J; Lerose, D; Gösele, U; Christiansen, S

    2009-06-01

    Gold caps on silicon nanowires are selectively coated with silver by autometallography (electroless deposition). Changing the conditions of silver deposition, a variety of different coating morphologies can be produced [figure: see text]. The different silver coating morphologies are investigated in terms of their capabilities for surface enhanced Raman scattering (SERS) experiments.Gold caps on silicon nanowires are hemispherical and only a few tens of nanometers in diameter when grown from metal catalysts by the vapor-liquid-solid growth mechanism using chemical vapor deposition. These gold caps are capable of enhancing Raman signals based on the surface-enhanced Raman scattering effect. The Raman signal can be enhanced even further (by at least one order of magnitude) when silver is selectively deposited onto these gold caps by autometallography (electroless deposition). By changing the silver deposition conditions, different coating morphologies can be realized on the gold caps that range from very thin, smooth layers to uneven and extremely rough coatings. The SERS signal enhancement and the spatial homogeneity of the achievable enhancement are compared for the different silver coatings using a model dye molecule. PMID:19399821

  5. High Throughput Nanofabrication of Silicon Nanowire and Carbon Nanotube Tips on AFM Probes by Stencil-Deposited Catalysts

    DEFF Research Database (Denmark)

    Engstrøm, Daniel Southcott; Savu, Veronica; Zhu, Xueni;

    2011-01-01

    A new and versatile technique for the wafer scale nanofabrication of silicon nanowire (SiNW) and multiwalled carbon nanotube (MWNT) tips on atomic force microscope (AFM) probes is presented. Catalyst material for the SiNW and MWNT growth was deposited on prefabricated AFM probes using aligned wafer...

  6. Highly robust silicon nanowire/graphene core-shell electrodes without polymeric binders

    Science.gov (United States)

    Lee, Sang Eon; Kim, Han-Jung; Kim, Hwanjin; Park, Jong Hyeok; Choi, Dae-Geun

    2013-09-01

    A large theoretical charge storage capacity along with a low discharge working potential renders silicon a promising anode material for high energy density lithium ion batteries. However, up to 400% volume expansion during charge-discharge cycling coupled with a low intrinsic electronic conductivity causes pulverization and fracture, thus inhibiting silicon's widespread use in practical applications. We report herein on a low cost approach to fabricate hybrid silicon nanowire (SiNW)/graphene nanostructures that exhibit enhanced cycle performance with the capability of retaining more than 90% of their initial capacity after 50 cycles. We also demonstrate the use of hot-pressing in the absence of any common polymer binder such as PVDF to bind the hybrid structure to the current collector. The applied heat and pressure ensure strong adhesion between the SiNW/graphene nano-composite and current collector. This facile yet strong binding method is expected to find use in the further development of polymer-binder free anodes for lithium ion batteries.A large theoretical charge storage capacity along with a low discharge working potential renders silicon a promising anode material for high energy density lithium ion batteries. However, up to 400% volume expansion during charge-discharge cycling coupled with a low intrinsic electronic conductivity causes pulverization and fracture, thus inhibiting silicon's widespread use in practical applications. We report herein on a low cost approach to fabricate hybrid silicon nanowire (SiNW)/graphene nanostructures that exhibit enhanced cycle performance with the capability of retaining more than 90% of their initial capacity after 50 cycles. We also demonstrate the use of hot-pressing in the absence of any common polymer binder such as PVDF to bind the hybrid structure to the current collector. The applied heat and pressure ensure strong adhesion between the SiNW/graphene nano-composite and current collector. This facile yet strong

  7. Thermal stability of comp ound stucture of silicon nanowire encapsulated in carb on nanotub es%碳纳米管包裹的硅纳米线复合结构的热稳定性研究∗

    Institute of Scientific and Technical Information of China (English)

    卢顺顺; 张晋敏; 郭笑天; 高廷红; 田泽安; 何帆; 贺晓金; 吴宏仙; 谢泉

    2016-01-01

    To guide the experiment research, the thermal stability of composite silicon nanowire encapsulated in carbon nanotubes is investigated by computer simulation. The cubic-diamond-structured silicon nanowires with the same diameter and [111] orientationt are filled in some armchaired single-walled carbon nanotubes. The heat process of compound structure of silicon nanowire encapsulated in carbon nanotubes is simulated by classical molecular dynamic method. Through the visualization and energy analysis method, the thermal stability of composite structure is studied. The changes in the thermal stability of silicon nanowires and carbon nanotubes are explained by the relationship between carbon nanotube space constraint and van der Waals force. It is found that the diameter of the carbon nanotubes is closely related to the thermal stability of silicon nanowires inside. When the nanotube diameter is small, thermal stability of silicon nanowires increases;when the nanotube diameter increases up to a certain size, the thermal stability of silicon nanowires will suddenly drop significantly: until the distance between silicon nanowires and the wall of carbon nanotube is greater than 1 nm, the thermal stability of silicon nanowires will be restored. On the other hand, silicon nanowires filled into the carbon nanotubes have an effect of reducing the thermal stability of carbon nanotubes.

  8. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    Science.gov (United States)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  9. Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour-solid-solid mechanism

    International Nuclear Information System (INIS)

    Unlike typical Au used as a catalyst for the synthesis of silicon nanowires via the vapour-liquid-solid mechanism, Cu has been found to induce a synthesis process governed by the vapour-solid-solid mechanism. Moreover, the temperature window for obtaining high-quality wires with Cu has been found to be relatively smaller than that shown by the Au: from 600 to 650 deg. C. However, high-resolution transmission electron microscopy analysis reveals significant new properties of the nanowires obtained. They have the peculiarity of successively switching the silicon structure from diamond to the wurtzite phase along the growth direction. This change of the crystalline structure implies that it has an important impact on the transport properties and characteristics of electronic devices. The results will be important for the future integration and application of silicon, where electrical and thermal transport properties play a significant role

  10. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  11. Membrane Protein Incorporation into Nano-Bioelectronics: An insight into Rhodopsin Controlled SiNW-FET Devices

    Science.gov (United States)

    Tunuguntla, Ramya

    that the manipulation of lipid composition can indeed control orientation of an asymmetrically charged membrane protein, proteorhodopsin, in liposomes. One-dimensional inorganic nanostructures, which have critical dimensions comparable to the sizes of biological molecules, form an excellent materials platform for building such integrated structures. Researchers already use silicon nanowire-based field effect transistors functionalized with molecular recognition sites in a diverse array of biosensors. In our group, we have been developing a platform for integration of membrane protein functionality and electronic devices using a 1-D phospholipid bilayer device architecture. In these devices, the membrane proteins reside within the lipid bilayer that covers a nanowire channel of a field-effect transistor. This lipid bilayer performs several functions: it shields the nanowire from the solution species; it serves as a native-like environment for membrane proteins and preserves their functionality, integrity, and even vectorality. In this work, we show that a 1-D bilayer device incorporating a rhodopsin proton pump allows us to couple light-driven proton transport to a bioelectronic circuit. We also report that we were able to adapt another distinctive feature of biological signal processing---their widespread use of modifiers, co-factors, and mediator molecules---to regulate and fine-tune the operational characteristics of the bioelectronic device. In our example, we use co-assembly of protein channels and ionophores in the 1-D bilayer to modify the device output levels and response time.

  12. Fabrication of CoFe2O4 ferrite nanowire arrays in porous silicon template and their local magnetic properties

    Science.gov (United States)

    Hui, Zheng; Man-Gui, Han; Long-Jiang, Deng

    2016-02-01

    CoFe2O4 ferrite nanowire arrays are fabricated in porous silicon templates. The porous silicon templates are prepared via metal-assisted chemical etching with gold (Au) nanoparticles as the catalyst. Subsequently, CoFe2O4 ferrite nanowires are successfully synthesized into porous silicon templates by the sol-gel method. The magnetic hysteresis loop of nanowire array shows an isotropic feature of magnetic properties. The coercivity and squareness ratio (Mr/Ms) of ensemble nanowires are found to be 630 Oe (1 Oe, = 79.5775 A·m-1 and 0.4 respectively. However, the first-order reversal curve (FORC) is adopted to reveal the probability density function of local magnetostatic properties (i.e., interwire interaction field and coercivity). The FORC diagram shows an obvious distribution feature for interaction field and coercivity. The local coercivity with a value of about 1000 Oe is found to have the highest probability. Project supported by the National Natural Science Foundation of China (Grant No. 61271039), the Scientific Projects of Sichuan Province, China (Grant No. 2015HH0016), and the Natural Science Foundations of Zhejiang Province, China (Grant Nos. LQ12E02001 and Y107255).

  13. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    International Nuclear Information System (INIS)

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

  14. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yong [Department of Chemistry, George Washington University, Washington, DC 20052 (United States); Luo Guanghong [Department of Chemistry, George Washington University, Washington, DC 20052 (United States); Diao Jiajie [Department of Physics, George Washington University, Washington, DC 20052 (United States); Chornoguz, Olesya [Department of Chemistry, George Washington University, Washington, DC 20052 (United States); Reeves, Mark [Department of Physics, George Washington University, Washington, DC 20052 (United States); Vertes, Akos [Department of Chemistry, George Washington University, Washington, DC 20052 (United States)

    2007-04-15

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12{+-}1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3x{omega} Nd:YAG laser in air, SF{sub 6} or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to {approx}2 {mu}m in SF{sub 6} gas and to {approx}5 {mu}m in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly ({approx}10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits.

  15. Photonic light trapping in silicon nanowire arrays: deriving and overcoming the physical limitations

    CERN Document Server

    Schmitt, Sebastian W

    2016-01-01

    Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent photonic light concentration that enhances their performance as solar absorbers. Using numerical simulations we show, how light concentration is induced by high optical cross sections of the individual SiNWs but cannot be optimized independently of the SiNW array absorption. While an ideal spatial density exists, for which the SiNW array absorption for VIS and NIR wavelengths reaches a maximum, the spatial correlation of SiNWs in an array suppresses the formation of optical Mie modes responsible for light concentration. We show that different from SiNWs with straight sidewalls, arrays of inverted silicon nanocones (SiNCs) permit to avoid the mode suppression. In fact they give rise to an altered set of photonic modes which is induced by the spatial correlation of SiNCs in the...

  16. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %). PMID:27128407

  17. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  18. Lateral heat flow distribution and defect-dependent thermal resistance in an individual silicon nanowire

    Science.gov (United States)

    Lee, Seung-Yong; Lee, Won-Yong; Thong, John T. L.; Kim, Gil-Sung; Lee, Sang-Kwon

    2016-03-01

    Studies aiming to significantly improve thermal properties, such as figure-of-merit, of silicon nanowires (SiNW) have focused on diameter reduction and surface or interface roughness control. However, the mechanism underlying thermal conductivity enhancement of roughness controlled NWs remains unclear. Here, we report a significant influence of stacking faults (SFs) on the lateral thermal conductivity of a single SiNW, using a combination of newly developed in situ spatially-resolved thermal resistance experiments and high-resolution transmission electron microscopy measurements. We used as-grown SiNWs tapered along the growth direction with progressively lower roughness and SFs density. The results clearly confirmed that both surface roughness and twins or SFs densities suppress the thermal conductivity of an individual SiNW. The results and measurement techniques presented here hold great potential for inspecting minute changes in thermal resistance along an individual SiNW, caused by induced SFs on the nanostructure, and for improving one-dimensional nanowire-based thermoelectric device performance.

  19. Surface-Coating Regulated Lithiation Kinetics and Degradation in Silicon Nanowires for Lithium Ion Battery

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Langli; Yang, Hui; Yan, Pengfei; Travis, Jonathan J.; Lee, Younghee; Liu, Nian; Piper, Daniela M.; Lee, Se-Hee; Zhao, Peng; George, Steven M.; Zhang, Jiguang; Cui, Yi; Zhang, Sulin; Ban, Chunmei; Wang, Chong M.

    2015-05-26

    Silicon (Si)-based materials hold promise as the next-generation anodes for high-energy lithium (Li)-ion batteries. Enormous research efforts have been undertaken to mitigate the chemo-mechanical failure due to the large volume changes of Si during lithiation and delithiation cycles. It has been found nanostructured Si coated with carbon or other functional materials can lead to significantly improved cyclability. However, the underlying mechanism and comparative performance of different coatings remain poorly understood. Herein, using in situ transmission electron microscopy (TEM) through a nanoscale half-cell battery, in combination with chemo-mechanical simulation, we explored the effect of thin (~5 nm) alucone and Al2O3 coatings on the lithiation kinetics of Si nanowires (SiNWs). We observed that the alucone coating leads to a “V-shaped” lithiation front of the SiNWs , while the Al2O3 coating yields an “H-shaped” lithiation front. These observations indicate that the difference between the Li surface diffusivity and bulk diffusivity of the coatings dictates lithiation induced morphological evolution in the nanowires. Our experiments also indicate that the reaction rate in the coating layer can be the limiting step for lithiation and therefore critically influences the rate performance of the battery. Further, the failure mechanism of the Al2O3 coated SiNWs was also explored. Our studies shed light on the design of high capacity, high rate and long cycle life Li-ion batteries.

  20. Ultra-thin superconducting film coated silicon nitride nanowire resonators for low-temperature applications

    Science.gov (United States)

    Sebastian, Abhilash; Zhelev, Nikolay; de Alba, Roberto; Parpia, Jeevak

    We demonstrate fabrication of high stress silicon nitride nanowire resonators with a thickness and width of less than 50 nm intended to be used as probes for the study of superfluid 3He. The resonators are fabricated as doubly-clamped wires/beams using a combination of electron-beam lithography and wet/dry etching techniques. We demonstrate the ability to suspend (over a trench of depth ~8 µm) wires with a cross section as small as 30 nm, covered with a 20 nm superconducting film, and having lengths up to 50 µm. Room temperature resonance measurements were carried out by driving the devices using a piezo stage and detecting the motion using an optical interferometer. The results show that metalizing nano-mechanical resonators not only affects their resonant frequencies but significantly reduce their quality factor (Q). The devices are parametrically pumped by modulating the system at twice its fundamental resonant frequency, which results in observed amplification of the signal. The wires show self-oscillation with increasing modulation strength. The fabricated nanowire resonators are intended to be immersed in the superfluid 3He. By tracking the resonant frequency and the Q of the various modes of the wire versus temperature, we aim to probe the superfluid gap structure.

  1. The design of a new spiking neuron using dual work function silicon nanowire transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bindal, Ahmet [Computer Engineering Department, San Jose State University, One Washington Square, San Jose, CA 95192 (United States); Hamedi-Hagh, Sotoudeh [Electrical Engineering Department, San Jose State University, One Washington Square, San Jose, CA 95192 (United States)

    2007-03-07

    A new spike neuron cell is designed using vertically grown, undoped silicon nanowire transistors. This study presents an entire design cycle from designing and optimizing vertical nanowire transistors for minimal power dissipation to realizing a neuron cell and measuring its dynamic power consumption, performance and layout area. The design cycle starts with determining individual metal gate work functions for NMOS and PMOS transistors as a function of wire radius to produce a 300 mV threshold voltage. The wire radius and effective channel length are subsequently varied to find a common body geometry for both transistors that yields smaller than 1 pA OFF current while producing maximum drive currents. A spike neuron cell is subsequently built using these transistors to measure its transient performance, power dissipation and layout area. Post-layout simulation results indicate that the neuron consumes 0.397 {mu}W to generate a +1 V and 1.12 {mu}W to generate a -1 V output pulse for a fan-out of five synapses at 500 MHz; the power dissipation increases by approximately 3 nW for each additional synapse at the output for generating either pulse. The neuron circuit occupies approximately 0.27 {mu}m{sup 2}.

  2. Electron-acoustic phonon interaction and mobility in stressed rectangular silicon nanowires

    Science.gov (United States)

    Zhu, Lin-Li

    2015-01-01

    We investigate the effects of pre-stress and surface tension on the electron-acoustic phonon scattering rate and the mobility of rectangular silicon nanowires. With the elastic theory and the interaction Hamiltonian for the deformation potential, which considers both the surface energy and the acoustoelastic effects, the phonon dispersion relation for a stressed nanowire under spatial confinement is derived. The subsequent analysis indicates that both surface tension and pre-stress can dramatically change the electron-acoustic phonon interaction. Under a negative (positive) surface tension and a tensile (compressive) pre-stress, the electron mobility is reduced (enhanced) due to the decrease (increase) of the phonon energy as well as the deformation-potential scattering rate. This study suggests an alternative approach based on the strain engineering to tune the speed and the drive current of low-dimensional electronic devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 11472243, 11302189, and 11321202), the Doctoral Fund of Ministry of Education of China (Grant No. 20130101120175), the Zhejiang Provincial Qianjiang Talent Program, China (Grant No. QJD1202012), and the Educational Commission of Zhejiang Province, China (Grant No. Y201223476).

  3. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  4. Enhanced photovoltaic performance of organic/silicon nanowire hybrid solar cells by solution-evacuated method.

    Science.gov (United States)

    Wang, Wei-Li; Zou, Xian-Shao; Zhang, Bin; Dong, Jun; Niu, Qiao-Li; Yin, Yi-An; Zhang, Yong

    2014-06-01

    A method has been developed to fabricate organic-inorganic hybrid heterojunction solar cells based on n-type silicon nanowire (SiNW) and poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) hybrid structures by evacuating the PEDOT:PSS solution with dip-dropping on the top of SiNWs before spin-coating (solution-evacuating). The coverage and contact interface between PEDOT:PSS and SiNW arrays can be dramatically enhanced by optimizing the solution-evacuated time. The maximum power conversion efficiency (PCE) reaches 9.22% for a solution-evacuated time of 2 min compared with 5.17% for the untreated pristine device. The improvement photovoltaic performance is mainly attributed to better organic coverage and contact with an n-type SiNW surface.

  5. Use of self-assembled peptide nanostructures for the fabrication of silicon nanowires

    DEFF Research Database (Denmark)

    Andersen, Karsten Brandt; Castillo, Jaime; Bakmand, Tania;

    2011-01-01

    1. INTRODUCTION Self-assembled diphenylalanine peptide nanotubes provide a means of achieving nanostructured materials in a very simple and fast way. Recent discoveries have shown that this unique material, in addition to remaining stable under dry conditions, rapidly dissolves in water making...... it a promising candidate for controlled nanofabrication without organic solvents [1]. The present work demonstrates how this unique structure can be used as both an etching mask in a dry etching procedure and as a lift-off material. As a further demonstration of the potential of this technique, the peptide...... photolithography, and after deposition of the electrodes, self-assembled peptide nanotubes (PNT), figure 1, were positioned on top of the electrodes. The silicon nanowires were then etched in a reactive ion etching process masked by the positioned peptide nanotubes. Finally, the peptide nanotubes were dissolved...

  6. Bi-photon spectral correlation measurements from a silicon nanowire in the quantum and classical regimes

    CERN Document Server

    Jizan, Iman; Xiong, Chunle; Collins, Matthew J; Choi, Duk-Yong; Chae, Chang Joon; Liscidini, Marco; Steel, M J; Eggleton, Benjamin J; Clark, Alex S

    2014-01-01

    The growing requirement for photon pairs with specific spectral correlations in quantum optics experiments has created a demand for fast, high resolution and accurate source characterization. A promising tool for such characterization uses the classical stimulated process, in which an additional seed laser stimulates photon generation yielding much higher count rates, as recently demonstrated for a $\\chi^{(2)}$ integrated source in A.~Eckstein \\emph{et al.}, Laser Photon. Rev. \\textbf{8}, L76 (2014). In this work we extend these results to $\\chi^{(3)}$ sources, demonstrating spectral correlation measurements via stimulated four-wave mixing for the first time in a integrated optical waveguide, namely a silicon nanowire. We directly confirm the speed-up due to higher count rates and demonstrate that additional resolution can be gained when compared to traditional coincidence measurements. As pump pulse duration can influence the degree of spectral entanglement, all of our measurements are taken for two differen...

  7. Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks

    Energy Technology Data Exchange (ETDEWEB)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, J.; Qadri, S. N.; Caldwell, J. D. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, District of Columbia 20375 (United States)

    2015-09-14

    Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reaction between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.

  8. Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications

    Science.gov (United States)

    Namdari, Pooria; Daraee, Hadis; Eatemadi, Ali

    2016-09-01

    The application of silicon nanowire (SiNW) biosensor as a subtle, label-free, and electrical tool has been extensively demonstrated by several researchers over the past few decades. Human ability to delicately fabricate and control its chemical configuration, morphology, and arrangement either separately or in combination with other materials as lead to the development of a nanomaterial with specific and efficient electronic and catalytic properties useful in the fields of biological sciences and renewable energy. This review illuminates on the various synthetic methods of SiNW, with its optical and electrical properties that make them one of the most applicable nanomaterials in the field of biomolecule sensing, photoelectrochemical conversion, and diseases diagnostics.

  9. Photodetection and transport properties of surface capped silicon nanowires arrays with polyacrylic acid

    Directory of Open Access Journals (Sweden)

    Kamran Rasool

    2013-08-01

    Full Text Available Efficient hybrid photodetector consisting of silicon nanowires (SiNWs (∼40 μm capped with Polyacrylic Acid (PAA is demonstrated. Highly diluted PAA with deionized (DI water was spun directly on vertical SiNW arrays prepared by metal assisted electroless chemical etching (MACE technique. We have observed ∼9, 4 and 9 times enhancement in responsivity, detectivity and external quantum efficiency in SiNWs/PAA hybrid device in comparison to SiNWs only device. Higher electrical current and photodetection may be due to the increment of hydrophilic content (acceptor like states on SiNWs interface. The higher photosensitivity can also be attributed to the presence of low refractive index PAA around SiNWs which causes funneling of photon energy into SiNWs. Surface roughness of SiNWs leads to immobilization of charge carriers and hence shows persistent photoconductivity.

  10. Ultra-high efficient solar cell based on decagonal arrays of silicon nanowires

    Science.gov (United States)

    Hussein, Mohamed; Hameed, Mohamed Farhat O.; Areed, Nihal F. F.; Obayya, Salah Sabry A.

    2014-11-01

    Silicon nanowires (SiNWs) are the subject of intense research in solar energy harvesting due to their unique electrical and optical characteristics. The transmission, reflection, and absorption spectra of decagonal Si NWs (D-SiNWs) solar cells have been calculated using a three-dimensional finite-difference time-domain method to present a design guideline for ultra-high efficiency SiNW in solar cell applications. In this study, the structure geometrical parameters of the suggested design are tuned to maximize light absorption. The ultimate efficiency is used to quantify the absorption enhancement of the SiNWs solar cells. A maximum ultimate efficiency of 39.3% is achieved for the reported D-SiNWs, which is greater than that of the previous work of slanting Si NWs by 17.49%.

  11. Specific and reversible immobilization of histidine-tagged proteins on functionalized silicon nanowires

    DEFF Research Database (Denmark)

    Liu, Yi-Chi; Rieben, Nathalie Ines; Iversen, Lars;

    2010-01-01

    Silicon nanowire (Si NW)-based field effect transistors (FETs) have shown great potential as biosensors (bioFETs) for ultra-sensitive and label-free detection of biomolecular interactions. Their sensitivity depends not only on the device properties, but also on the function of the biological...... their function upon immobilization onto SiNWs. Importantly, the protein immobilization on the Si NWs is shown to be reversible after addition of EDTA or imidazole, thus allowing the regeneration of the bioFET when needed, such as in the case of proteins having a limited lifetime. We anticipate that our...... methodology may find a generic use for the development of bioFETs exploiting functional protein assays because of its high compatibility to various types of NWs and proteins....

  12. Detection of DNA of genetically modified maize by a silicon nanowire field-effect transistor

    International Nuclear Information System (INIS)

    A silicon nanowire field-effect transistor based sensor (SiNW-FET) has been proved to be the most sensitive and powerful device for bio-detection applications. In this paper, SiNWs were first fabricated by using our recently developed deposition and etching under angle technique (DEA), then used to build up the complete SiNW device based biosensor. The fabricated SiNW biosensor was used to detect DNA of genetically modified maize. As the DNA of the genetically modified maize has particular DNA sequences of 35S promoter, we therefore designed 21 mer DNA oligonucleotides, which are used as a receptor to capture the transferred DNA of maize. In our work, the SiNW biosensor could detect DNA of genetically modified maize with concentrations down to about 200 pM

  13. Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing.

    Science.gov (United States)

    Chang, Chia-Chi; Chen, Haitian; Chen, Chun-Chung; Hung, Wei-Hsuan; Hsu, I-Kai; Theiss, Jesse; Zhou, Chongwu; Cronin, Stephen B

    2011-07-29

    We study the effect of polarized laser annealing on the crystalline structure of individual crystalline-amorphous core-shell silicon nanowires (NWs) using Raman spectroscopy. The crystalline fraction of the annealed spot increases dramatically from 0 to 0.93 with increasing incident laser power. We observe Raman lineshape narrowing and frequency hardening upon laser annealing due to the growth of the crystalline core, which is confirmed by high resolution transmission electron microscopy (HRTEM). The anti-Stokes:Stokes Raman intensity ratio is used to determine the local heating temperature caused by the intense focused laser, which exhibits a strong polarization dependence in Si NWs. The most efficient annealing occurs when the laser polarization is aligned along the axis of the NWs, which results in an amorphous-crystalline interface less than 0.5 µm in length. This paper demonstrates a new approach to control the crystal structure of NWs on the sub-micron length scale.

  14. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Shailendra K., E-mail: shailendra.saxena3@gmail.com; Rai, Hari. M.; Late, Ravikiran [Material Research Laboratory, Discipline of Physics, School of Basic Sciences, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India); Sagdeo, Pankaj R.; Kumar, Rajesh [Material Research Laboratory, Discipline of Physics, School of Basic Sciences, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India); Material Science and Engineering Group, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India)

    2015-05-15

    In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence.

  15. Near-theoretical fracture strengths in native and oxidized silicon nanowires

    Science.gov (United States)

    DelRio, Frank W.; White, Ryan M.; Krylyuk, Sergiy; Davydov, Albert V.; Friedman, Lawrence H.; Cook, Robert F.

    2016-08-01

    In this letter, fracture strengths σ f of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σ f in the Si was comparable to the theoretical strength of Si, ≈22 GPa. In the oxidized SiNWs, σ f in the SiO2 was comparable to the theoretical strength of SiO2, ≈6 to 12 GPa. The results indicate a change in the failure mechanism between native SiNWs, in which fracture originated via inter-atomic bond breaking or atomic-scale defects in the Si, and oxidized SiNWs, in which fracture initiated from surface roughness or nano-scale defects in the SiO2.

  16. Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications.

    Science.gov (United States)

    Namdari, Pooria; Daraee, Hadis; Eatemadi, Ali

    2016-12-01

    The application of silicon nanowire (SiNW) biosensor as a subtle, label-free, and electrical tool has been extensively demonstrated by several researchers over the past few decades. Human ability to delicately fabricate and control its chemical configuration, morphology, and arrangement either separately or in combination with other materials as lead to the development of a nanomaterial with specific and efficient electronic and catalytic properties useful in the fields of biological sciences and renewable energy. This review illuminates on the various synthetic methods of SiNW, with its optical and electrical properties that make them one of the most applicable nanomaterials in the field of biomolecule sensing, photoelectrochemical conversion, and diseases diagnostics. PMID:27639579

  17. Interaction of nucleobases with silicon nanowires: A first-principles study

    Science.gov (United States)

    Zhong, Xiaoliang; Slough, William J.; Pandey, Ravindra; Friedrich, Craig

    2012-11-01

    The interaction between the nucleic acid bases - adenine (A), guanine (G), cytosine (C), thymine (T) and uracil (U) - and a hydrogen-passivated silicon nanowire (SiNW) is investigated within the framework of density functional theory. The calculated binding energy of the nucleic acid bases with the SiNW shows the order: G > A≈C≈T≈U. This suggests that the interaction strength of a hydrogen passivated SiNW with the nucleic acid bases is nearly the same-G being an exception. The electronic structure of the nucleobase-SiNW complex is used to further characterize the nature of the interaction showing that it is likely electrostatic in nature.

  18. Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications

    Institute of Scientific and Technical Information of China (English)

    YANG Cheng; ZHANG Gang; LEE Dae-Young; LI Hua-Min; LIM Young-Dae; Y00 Won Jong; PARK Young-Jun; KIM Jong-Min

    2011-01-01

    Self-assembly of silicon nanowire(SiNW)arrays is studied using SF6/02 plasma treatment. The self-assembly method can be applied to single- and poly-crystalline Si substrates. Plasma conditions can control the length and diameter of the SiNW arrays. Lower reflectance of the wire arrays over the wavelength range 200-1100nm is obtained. The conducting transparent indium-tin-oxide(ITO) electrode can be fully coated on the self-assembled SiNW arrays by sputtering. The ITO-coated SiNW solar cells show the same low surface light reflectance and a higher carrier collection efficiency than SiNW solar cells without ITO coating. An efficiency enhancement of around 3 times for ITO coated SiNW solar cells is demonstrated via experiments.

  19. Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage

    Institute of Scientific and Technical Information of China (English)

    Alireza Kargar

    2009-01-01

    A silicon nanowire (Si-NW) sensor for pH detection is presented.The conductance of the device is analytically obtained,demonstrating that the conductance increases with decreasing oxide thickness.To calculate the electrical conductance of the sensor,the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied.To improve the conductance and sensitivity,a Si-NW sensor with nanoscale side gate voltage is offered and its characteristics are theoretically achieved.It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages.This effect is compared to a similar fabricated structure in the literature,which has a wire with a rectangular cross section.Finally,the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.

  20. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Dalchiele, E.A., E-mail: dalchiel@fing.edu.u [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Martin, F.; Leinen, D. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga, Campus de Teatinos s/n, E29071 Malaga (Spain); Marotti, R.E. [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Ramos-Barrado, J.R. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga, Campus de Teatinos s/n, E29071 Malaga (Spain)

    2010-01-31

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  1. Temperature and directional dependences of the infrared dielectric function of free standing silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Kazan, M.; Bruyant, A.; Sedaghat, Z.; Arnaud, L.; Blaize, S.; Royer, P. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, Universite de Technologie de Troyes, CNRS FRE 2848, 12 Rue Marie Curie, 10010 Troyes, Cedex (France)

    2011-03-15

    An approach to calculate the infrared dielectric function of semiconductor nanostructures is presented and applied to silicon (Si) nanowires (NW's). The phonon modes symmetries and frequencies are calculated by means of the elastic continuum medium theory. The modes strengths and damping are calculated from a model for lattice dynamics and perturbation theory. The data are used in anisotropic Lorentz oscillator model to generate the temperature and directional dependences of the infrared dielectric function of free standing Si NW's. Our results showed that in the direction perpendicular to the NW axis, the complex dielectric function is identical to that of bulk Si. However, along the NW axis, the infrared dielectric function is a strong function of the wavelength. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Investigation of drift effect on silicon nanowire field effect transistor based pH sensor

    Science.gov (United States)

    Kim, Sihyun; Kwon, Dae Woong; Lee, Ryoongbin; Kim, Dae Hwan; Park, Byung-Gook

    2016-06-01

    It is widely accepted that the operation mechanism of pH-sensitive ion sensitive field effect transistor (ISFET) can be divided into three categories; reaction of surface sites, chemical modification of insulator surface, and ionic diffusion into the bulk of insulator. The first mechanism is considered as the main operation mechanism of pH sensors due to fast response, while the others with relatively slow responses disturb accurate pH detection. In this study, the slow responses (often called drift effects) are investigated in silicon nanowire (SiNW) pH-sensitive ISFETs. Based on the dependence on the channel type of SiNW, liquid gate bias, and pH, it is clearly revealed that the drift of n-type SiNW results from H+ diffusion into the insulator whereas that of p-type SiNW is caused by chemical modification (hydration) of the insulator.

  3. The morphology of silicon nanowires grown in the presence of trimethylaluminium

    Energy Technology Data Exchange (ETDEWEB)

    Oehler, F; Gentile, P; Hertog, M Den; Rouviere, J [CEA, INAC, Minatec, F-38054 Grenoble (France); Baron, T [LTM/CNRS/UJF/Grenoble-INP, 17 Rue des Martyrs, F-38054 Grenoble (France); Ferret, P [CEA, LETI, F-38054 Grenoble (France)], E-mail: fabrice.oehler@cea.fr, E-mail: pascal.gentile@cea.fr

    2009-06-17

    The effects of trimethylaluminium (TMA) on silicon nanowires grown by chemical vapour deposition (CVD) were investigated in the 650-850 deg. C growth temperature range. Gold was used as the growth catalyst and SiH{sub 4} in H{sub 2} carrier gas as the Si precursor. Depending on substrate temperature and TMA partial pressure, the structure's morphology evolves from wires to tapered needles, pyramids or nanotrees. The TMA presence was linked to two specific growth modes: an enhanced surface growth which forms Si needles and a branched growth leading to Si nanotrees. We suggest that competition between these two specific growth modes and the usual Au-catalyzed VLS growth is responsible for the observed morphology changes.

  4. Nanoelectronic detection of triggered secretion of pro-inflammatory cytokines using CMOS compatible silicon nanowires.

    Science.gov (United States)

    Pui, Tze-Sian; Agarwal, Ajay; Ye, Feng; Huang, Yinxi; Chen, Peng

    2011-01-15

    Nanotechnology, such as nanoelectronic biosensors, is bringing new opportunities and tools to the studies of cell biology, clinical applications, and drug discovery. In this study, crystalline silicon nanowire based field-effect transistors fabricated using top-down approach were employed to parallelly detect pro-inflammatory cytokines in the complex biological fluids (cell culture medium and blood samples) with high specificity and femtomolar sensitivity. Using this technique, the dynamic secretion of TNF-alpha and IL6 was revealed during the immune response of macrophages and rats to the stimulation of bacteria endotoxin. This technique could provide a unique platform to examine the profile of complex immune responses for fundamental studies and diagnosis. PMID:20977978

  5. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    . The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... a challenge for modification under ambient conditions. Self-assembled monolayer formation by hydrosilylation with alkenes and alkynes was thus investigated under different conditions, both ambient and controlled, and quantified using x-ray photoelectron spectroscopy. With the aim to create a platform...... with nanowire sensors functionalized using different modification schemes. To facilitate functionalization and measurement and as a first step towards integration into a point-of-care device, several microfluidic tools were developed for sample delivery to the sensor surface and as a modular platform...

  6. Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

    Science.gov (United States)

    Wang, Hao; Han, Wei-Hua; Zhao, Xiao-Song; Zhang, Wang; Lyu, Qi-Feng; Ma, Liu-Hong; Yang, Fu-Hua

    2016-10-01

    We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source-drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K. Project supported partly by the National Key R & D Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813).

  7. Label-Free Direct Detection of miRNAs with Poly-Silicon Nanowire Biosensors.

    Directory of Open Access Journals (Sweden)

    Jing He

    Full Text Available The diagnostic and prognostic value of microRNAs (miRNAs in a variety of diseases is promising. The novel silicon nanowire (SiNW biosensors have advantages in molecular detection because of their high sensitivity and fast response. In this study, poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET device was developed to achieve specific and ultrasensitive detection of miRNAs without labeling and amplification.The poly-SiNW FET was fabricated by a top-down Complementary Metal Oxide Semiconductor (CMOS wafer fabrication based technique. Single strand DNA (ssDNA probe was bind to the surface of the poly-SiNW device which was silanated and aldehyde-modified. By comparing the difference of resistance value before and after ssDNA and miRNA hybridization, poly-SiNW device can be used to detect standard and real miRNA samples.Poly-SiNW device with different structures (different line width and different pitch was applied to detect standard Let-7b sample with a detection limitation of 1 fM. One-base mismatched sequence could be distinguished meanwhile. Furthermore, these poly-SiNW arrays can detect snRNA U6 in total RNA samples extracted from HepG2 cells with a detection limitation of 0.2 μg/mL. In general, structures with pitch showed better results than those without pitch in detection of both Let-7b and snRNA U6. Moreover, structures with smaller pitch showed better detection efficacy.Our findings suggest that poly-SiNW arrays could detect standard and real miRNA sample without labeling or amplification. Poly-SiNW biosensor device is promising for miRNA detection.

  8. Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry.

    Science.gov (United States)

    Gonchar, Kirill A; Zubairova, Alsu A; Schleusener, Alexander; Osminkina, Liubov A; Sivakov, Vladimir

    2016-12-01

    Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5-15 % in the spectral region λ < 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500-1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

  9. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

    Science.gov (United States)

    Singh, Sangeeta; Sinha, Ruchir; Kondekar, P. N.

    2016-05-01

    In this paper, an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. It consists of axial nanowire heterostructure (silicide-intrinsic silicon-silicide) with three independent all-around gates, two gates are polarity control gates for dynamically reconfiguring the device polarity by modulating the effective Schottky barrier heights and a control gate switches the device ON and OFF. The most interesting features of the proposed structure are simplified fabrication process as the state-of-the-art for ion implantation and high thermal budget no more required for annealing. It is highly immune to process variations, doping control issues and random dopant fluctuations (RDF) and there are no mobility degradation issues related to high doping. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-type E-SiNW-SB-FET and 9 mV/dec for p-type E-SiNW-SB-FET for about five decades of current. Further, it resolves all the reliability related issues of IMOS as hot electron effects are no more limiting our device performance. It offers significant drive current of the order of 10-5-10-4 A and magnificently high ION/IOFF ratio of ∼108 along with the inherent advantages of symmetric device structure for its circuit realization.

  10. A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping.

    Science.gov (United States)

    Kanungo, Pratyushdas; Kögler, Reinhard; Werner, Peter; Gösele, Ulrich; Skorupa, Wolfgang

    2009-11-08

    We demonstrate a novel method to fabricate an axial p-n junction inside oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.

  11. Near-infrared quarter-waveplate with near-unity polarization conversion efficiency based on silicon nanowire array.

    Science.gov (United States)

    Dai, Yanmeng; Cai, Hongbing; Ding, Huaiyi; Ning, Zhen; Pan, Nan; Zhu, Hong; Shi, Qinwei; Wang, Xiaoping

    2015-04-01

    Metasurfaces made of subwavelength resonators can modify the wave front of light within the thickness much less than free space wavelength, showing great promises in integrated optics. In this paper, we theoretically show that electric and magnetic resonances supported simultaneously by a subwavelength nanowire with high refractive-index can be utilized to design metasurfaces with near-unity transmittance. Taking silicon nanowire for instance, we design numerically a near-infrared quarter-waveplate with high transmittance using a subwavelength nanowire array. The operation bandwidth of the waveplate is 0.14 μm around the center wavelength of 1.71 μm. The waveplate can convert a 45° linearly polarized incident light to circularly polarized light with conversion efficiency ranging from 94% to 98% over the operation band. The performance of quarter waveplate can in principle be tuned and improved through optimizing the parameters of nanowire arrays. Its compatibility to microelectronic technologies opens up a distinct possibility to integrate nanophotonics into the current silicon-based electronic devices.

  12. Near-infrared quarter-waveplate with near-unity polarization conversion efficiency based on silicon nanowire array.

    Science.gov (United States)

    Dai, Yanmeng; Cai, Hongbing; Ding, Huaiyi; Ning, Zhen; Pan, Nan; Zhu, Hong; Shi, Qinwei; Wang, Xiaoping

    2015-04-01

    Metasurfaces made of subwavelength resonators can modify the wave front of light within the thickness much less than free space wavelength, showing great promises in integrated optics. In this paper, we theoretically show that electric and magnetic resonances supported simultaneously by a subwavelength nanowire with high refractive-index can be utilized to design metasurfaces with near-unity transmittance. Taking silicon nanowire for instance, we design numerically a near-infrared quarter-waveplate with high transmittance using a subwavelength nanowire array. The operation bandwidth of the waveplate is 0.14 μm around the center wavelength of 1.71 μm. The waveplate can convert a 45° linearly polarized incident light to circularly polarized light with conversion efficiency ranging from 94% to 98% over the operation band. The performance of quarter waveplate can in principle be tuned and improved through optimizing the parameters of nanowire arrays. Its compatibility to microelectronic technologies opens up a distinct possibility to integrate nanophotonics into the current silicon-based electronic devices. PMID:25968730

  13. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Heo, Junseok; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Zhou, Zifan [Department of Electrical and Computer Engineering, University of Michigan-Dearborn, Dearborn, Michigan 48128 (United States); Guo, Wei [Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States); Ooi, Boon S. [Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)

    2013-10-28

    GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In{sub 0.3}Ga{sub 0.7}N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In{sub 0.3}Ga{sub 0.7}N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively.

  14. Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

    Science.gov (United States)

    Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

    2012-11-14

    A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used. PMID:23066892

  15. Rice-straw-like structure of silicon nanowire arrays for a hydrogen gas sensor

    International Nuclear Information System (INIS)

    A rice-straw-like silicon nanowire (SiNW) array was developed for hydrogen gas sensing applications. The straight-aligned SiNW array sensor was first fabricated by the metal-assisted electroless etching (MAEE) technique. Rice-straw-like SiNW arrays were formed using a repeated MAEE technique. Hydrogen sensing characteristics were measured for gas concentrations from 20 to 1000 ppm at room temperature. The rice-straw-like SiNW-array-based hydrogen gas sensor performed with low noise and a high response (232.5%) for 1000 ppm hydrogen gas. It was found that the rice-straw-like SiNW-array hydrogen gas sensor had a much better response (approximately 2.5 times) than the straight-aligned SiNW-array sensor. The rice-straw-like SiNW-array structure effectively increased the surface area and the concentration of silicon oxide, which provided additional binding sites for gas molecules. Thus, the rice-straw-like SiNW-array-based hydrogen gas sensor possessed good sensing properties and has the potential for mass production of sensing devices. (paper)

  16. Nano-Scale Tensile Testing and Sample Preparation Techniques for Silicon Nanowires

    Science.gov (United States)

    Fujii, Tatsuya; Sudoh, Koichi; Sakakihara, Shouichi; Naito, Muneyuki; Inoue, Shozo; Namazu, Takahiro

    2013-11-01

    In this paper, we describe an experimental technique to achieve a highly reliable characterization of the mechanical properties of silicon (Si) nanowires (NWs). A reusable on-chip Si device consisting of comb-drive electrostatic actuator for generating tensile force and capacitive sensors for measuring tensile force and displacement was designed and developed for quasi-static tensile test of Si NWs. The combination of focused ion beam (FIB) fabrication, FIB-assisted chemical vapor deposition, and probe manipulation enabled us to directly fabricate the NWs on the device. This sampling technique led to high yielding percentage of nano-scale tensile testing. The NWs were made from 200-nm-thick Si membranes that were produced by using silicon-on-nothing membrane fabrication technique. Several Si NWs were annealed at 700 °C in ultrahigh vacuum (UHV) for 5 min in order to examine the influence of annealing on the mechanical characteristics. The mean Young's modulus for nonannealed NWs was 129.1+/-10.1 GPa. After UHV annealing, the mean value was improved to be 168.1+/-1.3 GPa, comparable to the ideal value for Si(001)[110]. The annealing process gave rise to improving the Young's modulus, whereas it degraded the strength. Transmission electron microscopy suggested that recrystallization and gallium nanoclusters formation by annealing would have changed the mechanical characteristics.

  17. Synthesis, characterization and application of electroless metal assisted silicon nanowire arrays

    Science.gov (United States)

    Sahoo, Sumanta Kumar; Marikani, Arumugam

    2015-12-01

    Vertically aligned silicon nanowire arrays (SiNWs) have been synthesized by electroless metal deposition process. The fabricated SiNWs have an average diameter of 75 nm and 3.5-4.0 μm length, as confirmed from scanning electron microscopy. A characteristic asymmetric peak broadening at 520 cm-1 from Raman spectroscopy was obtained for the SiNWs as compared to the bulk silicon crystal due to phonon confinement. The as-prepared SiNWs exhibit good electron field-emission properties with turn-on field of about 8.26 V μm-1 at a current density of 4.9 μA cm-2. The SiNWs was functionalized by coating with a thin gold metallic film for 60 s, and then used as bio-probe for the detection of bovine serum albumin (BSA) protein molecules. From the linear sweep voltammetry analysis, the Au coated SiNWs, exhibit linear response to the BSA analyte with increase in concentration. The minimum detection limit of the protein molecule was calculated of about 1.16 μM by the as-synthesized SiNWs probe.

  18. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    Science.gov (United States)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D.; Ha, Jong-Yoon; Krylyuk, S.; Davydov, A. V.

    2015-03-01

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ˜10 W/cm2. Higher values of VOC and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ˜8% and internal quantum efficiency of ˜90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400-650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  19. NanoElectronics and BioElectronics

    Science.gov (United States)

    Srivastava, Deepak

    2001-01-01

    This viewgraph presentation reviews the use of Carbon Nanotube electronics in the bioelectronics. Included is a brief review of the carbon nanotube manufacturing, the use of carbon nanotubes in Atomic Force Microscopy (AFM), and Computational Nanotechnology, that allows designers to understand nanotube characteristics and serves as a design tool.

  20. Superamphiphobic Silicon-Nanowire-Embedded Microsystem and In-Contact Flow Performance of Gas and Liquid Streams.

    Science.gov (United States)

    Ko, Dong-Hyeon; Ren, Wurong; Kim, Jin-Oh; Wang, Jun; Wang, Hao; Sharma, Siddharth; Faustini, Marco; Kim, Dong-Pyo

    2016-01-26

    Gas and liquid streams are invariably separated either by a solid wall or by a membrane for heat or mass transfer between the gas and liquid streams. Without the separating wall, the gas phase is present as bubbles in liquid or, in a microsystem, as gas plugs between slugs of liquid. Continuous and direct contact between the two moving streams of gas and liquid is quite an efficient way of achieving heat or mass transfer between the two phases. Here, we report a silicon nanowire built-in microsystem in which a liquid stream flows in contact with an underlying gas stream. The upper liquid stream does not penetrate into the lower gas stream due to the superamphiphobic nature of the silicon nanowires built into the bottom wall, thereby preserving the integrity of continuous gas and liquid streams, although they are flowing in contact. Due to the superamphiphobic nature of silicon nanowires, the microsystem provides the best possible interfacial mass transfer known to date between flowing gas and liquid phases, which can achieve excellent chemical performance in two-phase organic syntheses.

  1. Texturing of the Silicon Substrate with Nanopores and Si Nanowires for Anti-reflecting Surfaces of Solar Cells

    Directory of Open Access Journals (Sweden)

    A.A. Druzhinin

    2015-06-01

    Full Text Available The paper presents the prospects of obtaining a functional multi-layer anti-reflecting coating of the front surface of solar cells by texturing the surface of the silicon by electrochemical etching. The physical model of the "Black Si" coating with discrete inhomogeneity of the refractive index and technological aspects of producing of "Black Si" functional anti-reflecting coatings were presented. The investigation results of the spectral characteristics of the obtained multilayer multiporous "Black Si" coatings for silicon solar cells made by electrochemical etching are presented. The possibility of creating the texture on a silicon wafer surface using silicon nanowires and ordered nanopores obtained by metal-assisted chemical etching was shown.

  2. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Tianyu; Xu, Youlong, E-mail: ylxu@mail.xjtu.edu.cn; Zhang, Zhengwei; Mao, Shengchun

    2015-08-30

    Graphical abstract: - Highlights: • How Ag transfers F{sup −} to the adjacent Si atom was investigated and deduced by DFT at atomic scale. • Three-electrode CV tests proved the transferring function of Ag in the etching reaction. • Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment. - Abstract: Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F{sup −}) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F{sup −}, smaller azimuth angle of F−Ag(T4)−Si, shorter bond length of F−Si compared with F−Ag. As F{sup −} was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF{sub 4} when it bonded with enough F{sup −} while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F{sup −} to Si.

  3. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays

    Science.gov (United States)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-05-01

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and

  4. Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

    Science.gov (United States)

    Dawood, M. K.; Tripathy, S.; Dolmanan, S. B.; Ng, T. H.; Tan, H.; Lam, J.

    2012-10-01

    We report on the structural and vibrational characterization of silicon (Si) nanowire arrays synthesized by metal-assisted chemical etching (MACE) of Si deposited with metal nanoparticles. Gold (Au) and silver (Ag) metal nanoparticles were synthesized by glancing angle deposition, and MACE was performed in a mixture of H2O2 and HF solution. We studied the structural differences between Au and Ag-etched Si nanowires. The morphology of the synthesized nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The optical and vibrational properties of the Si nanostructures were studied by photoluminescence and Raman spectroscopy using three different excitation sources (UV, visible, and near-infrared) and are correlated to their microstructures. The structural differences between Au-etched and Ag-etched nanowires are due to the higher degree of hole injection by the Au nanoparticle and diffusion into the Si nanowires, causing enhanced Si etching by HF on the nanowire surface. Au-etched nanowires were observed to be mesoporous throughout the nanowire while Ag-etched nanowires consisted of a thin porous layer around the crystalline core. In addition, the surface-enhanced resonant Raman scattering observed is attributed to the presence of the sunken metal nanoparticles. Such Si nanostructures may be useful for a wide range of applications such as photovoltaic and biological and chemical sensing.

  5. Printable Bioelectronics To Investigate Functional Biological Interfaces.

    Science.gov (United States)

    Manoli, Kyriaki; Magliulo, Maria; Mulla, Mohammad Yusuf; Singh, Mandeep; Sabbatini, Luigia; Palazzo, Gerardo; Torsi, Luisa

    2015-10-19

    Thin-film transistors can be used as high-performance bioelectronic devices to accomplish tasks such as sensing or controlling the release of biological species as well as transducing the electrical activity of cells or even organs, such as the brain. Organic, graphene, or zinc oxide are used as convenient printable semiconducting layers and can lead to high-performance low-cost bioelectronic sensing devices that are potentially very useful for point-of-care applications. Among others, electrolyte-gated transistors are of interest as they can be operated as capacitance-modulated devices, because of the high capacitance of their charge double layers. Specifically, it is the capacitance of the biolayer, being lowest in a series of capacitors, which controls the output current of the device. Such an occurrence allows for extremely high sensitivity towards very weak interactions. All the aspects governing these processes are reviewed here. PMID:26420480

  6. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D. [Department of Physics and School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Ha, Jong-Yoon; Krylyuk, S. [Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Davydov, A. V. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

    2015-03-28

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (V{sub OC}), short-circuit current density (J{sub SC}), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ∼10 W/cm{sup 2}. Higher values of V{sub OC} and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ∼8% and internal quantum efficiency of ∼90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400–650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  7. Reduced graphene oxide/silicon nanowire hetero- structures with enhanced photoactivity and superior photoelectrochemical stability

    Institute of Scientific and Technical Information of China (English)

    Xing Zhong[1; Gongming wang[1; Benjamin Papandrea[1; Mufan Li[1; Yuxi Xu[1; Yu Chen[2; Chih-Yen Chen[1; Hailong Zhou[1; Teng Xue[2; Yongjia Li[2; Dehui Li[1; Yu Huang[2,3; Xiangfeng Duan[1,3

    2015-01-01

    Silicon nanowires (SiNWs) have been widely studied as light harvesting antennas in photocatalysts due to their ability to absorb broad-spectrum solar radiation, but they are typically limited by poor photoelectrochemical stability. Here, we report the synthesis of reduced graphene oxide-SiNW (rGO-SiNW) heterostructures to achieve greatly improved photocatalytic activity and stability. The SiNWs were synthesized through a metal-assisted electroless etching process and functionalized with reduced graphene oxide (rGO) flakes through a chemical absorption process. Here, the rGO not only functions as a physical protection layer to isolate the SiNWs from the harsh electrochemical environment but also serves as a charge mediator to facilitate the charge separation and transport processes. Furthermore, the rGO may also function as a redox catalyst to ensure efficient utilization of photo-carriers for the desired chemical reactions. Photocatalytic dye degradation studies show that the photoactivity of the heterostructures can be significantly enhanced with an initial activation process and maintained without apparent decay over repeated reaction cycles. Electrochemical and photo- electrochemical studies indicate that the enhanced photoactivity and photostability can be attributed to the more efficient separation of photoexcited charge carriers in SiNWs and the reduced self-oxidation of the surface of the SiNWs during the photocatalytic dye degradation process. The ability to significantly improve the photocatalytic activity and stability in rGO-SiNW heterostructures can not only lead to more opportunities for the application of silicon-based photocatalysts/ photoelectrodes for solar energy harvesting but also provide new insights into the stabilization of other unstable photocatalytic systems

  8. Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint.

    Science.gov (United States)

    Accastelli, Enrico; Scarbolo, Paolo; Ernst, Thomas; Palestri, Pierpaolo; Selmi, Luca; Guiducci, Carlotta

    2016-03-15

    The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-gate transistors, such as silicon nanowires, are designed for high performance solid-state circuits thanks to their superior properties of voltage-to-current transduction, which can be advantageously exploited for pH sensing. A systematic study is carried out on rectangular-shaped nanowires developed in a complementary metal-oxide-semiconductor (CMOS)-compatible technology, showing that reducing the width of the devices below a few hundreds of nanometers leads to higher charge sensitivity. Moreover, devices composed of several wires in parallel further increase the exposed surface per unit footprint area, thus maximizing the signal-to-noise ratio. This technology allows a sub milli-pH unit resolution with a sensor footprint of about 1 µm², exceeding the performance of previously reported studies on silicon nanowires by two orders of magnitude.

  9. Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

    Directory of Open Access Journals (Sweden)

    Enrico Accastelli

    2016-03-01

    Full Text Available The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-gate transistors, such as silicon nanowires, are designed for high performance solid-state circuits thanks to their superior properties of voltage-to-current transduction, which can be advantageously exploited for pH sensing. A systematic study is carried out on rectangular-shaped nanowires developed in a complementary metal-oxide-semiconductor (CMOS-compatible technology, showing that reducing the width of the devices below a few hundreds of nanometers leads to higher charge sensitivity. Moreover, devices composed of several wires in parallel further increase the exposed surface per unit footprint area, thus maximizing the signal-to-noise ratio. This technology allows a sub milli-pH unit resolution with a sensor footprint of about 1 µm2, exceeding the performance of previously reported studies on silicon nanowires by two orders of magnitude.

  10. Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint.

    Science.gov (United States)

    Accastelli, Enrico; Scarbolo, Paolo; Ernst, Thomas; Palestri, Pierpaolo; Selmi, Luca; Guiducci, Carlotta

    2016-03-01

    The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-gate transistors, such as silicon nanowires, are designed for high performance solid-state circuits thanks to their superior properties of voltage-to-current transduction, which can be advantageously exploited for pH sensing. A systematic study is carried out on rectangular-shaped nanowires developed in a complementary metal-oxide-semiconductor (CMOS)-compatible technology, showing that reducing the width of the devices below a few hundreds of nanometers leads to higher charge sensitivity. Moreover, devices composed of several wires in parallel further increase the exposed surface per unit footprint area, thus maximizing the signal-to-noise ratio. This technology allows a sub milli-pH unit resolution with a sensor footprint of about 1 µm², exceeding the performance of previously reported studies on silicon nanowires by two orders of magnitude. PMID:26999232

  11. Synthesis and optical properties of silicon nanowires grown by different methods

    Energy Technology Data Exchange (ETDEWEB)

    Colli, A.; Hofmann, S.; Fasoli, A.; Ferrari, A.C.; Robertson, J. [University of Cambridge, Department of Engineering, Cambridge (United Kingdom); Ducati, C.; Dunin-Borkowski, R.E. [University of Cambridge, Department of Materials Science and Metallurgy, Cambridge (United Kingdom)

    2006-11-15

    We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapour-phase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 C) selective nucleation of SiNWs by Au-catalysed CVD and PECVD. Bulk production of SiNWs is obtained by thermal-vapour deposition from Si/SiO powders in a high-temperature furnace. In this case, SiNWs grow either by condensing on Au catalyst films, or by self-condensation of the vapour in a lower-temperature region of the furnace. Finally, we also achieve controlled growth by thermolysis of nanopatterned, multi-layered Si/Au thin-film precursors. The as-produced wires are compared in terms of yield, structural quality, and optical properties. Raman and photoluminescence spectra of SiNWs are discussed. (orig.)

  12. Complementary metal oxide semiconductor-compatible silicon nanowire biofield-effect transistors as affinity biosensors.

    Science.gov (United States)

    Duan, Xuexin; Rajan, Nitin K; Izadi, Mohammad Hadi; Reed, Mark A

    2013-11-01

    Affinity biosensors use biorecognition elements and transducers to convert a biochemical event into a recordable signal. They provides the molecule binding information, which includes the dynamics of biomolecular association and dissociation, and the equilibrium association constant. Complementary metal oxide semiconductor-compatible silicon (Si) nanowires configured as a field-effect transistor (NW FET) have shown significant advantages for real-time, label-free and highly sensitive detection of a wide range of biomolecules. Most research has focused on reducing the detection limit of Si-NW FETs but has provided less information about the real binding parameters of the biomolecular interactions. Recently, Si-NW FETs have been demonstrated as affinity biosensors to quantify biomolecular binding affinities and kinetics. They open new applications for NW FETs in the nanomedicine field and will bring such sensor technology a step closer to commercial point-of-care applications. This article summarizes the recent advances in bioaffinity measurement using Si-NW FETs, with an emphasis on the different approaches used to address the issues of sensor calibration, regeneration, binding kinetic measurements, limit of detection, sensor surface modification, biomolecule charge screening, reference electrode integration and nonspecific molecular binding.

  13. Characterization of a silicon nanowire-based cantilever air-flow sensor

    International Nuclear Information System (INIS)

    Silicon nanowire (SiNW)-based cantilever flow sensors with three different cantilever sizes (10 × 50, 20 × 90 and 40 × 100 µm2) and various SiNW lengths (2, 5 and 10 µm) have been designed for air velocity sensing. The total device thickness is around 3 µm, which consists of the bottom SiO2 layer (0.5 µm) and the top SiNx layer (2.5 µm). In addition, the SiNx layer is used to compensate the initial stress and also enhance the device immunity to air-flow-induced vibrations significantly. To experience the maximum strain induced by the air flow, SiNWs are embedded at the clamp point where the cantilever is anchored to the substrate. Taking advantage of the superior properties of SiNWs, the reported flow sensor shows outstanding air-flow-sensing capability in terms of sensitivity, linearity and hysteresis. With only a supply voltage of 0.1 V and the high initial resistance of the piezoresistive SiNWs, significant energy saving is reached in contrast to the thermal-based flow sensors as well as other recently reported piezoresistive designs. Last but not least, the significant size reduction of our device demonstrates the great scalability of SiNW-based flow sensors. (paper)

  14. Anisotropic Lithium Insertion Behavior in Silicon Nanowires: Binding Energy, Diffusion Barrier, and Strain Effect

    KAUST Repository

    Zhang, Qianfan

    2011-05-19

    Silicon nanowires (SiNWs) have recently been shown to be promising as high capacity lithium battery anodes. SiNWs can be grown with their long axis along several different crystallographic directions. Due to distinct atomic configuration and electronic structure of SiNWs with different axial orientations, their lithium insertion behavior could be different. This paper focuses on the characteristics of single Li defects, including binding energy, diffusion barriers, and dependence on uniaxial strain in [110], [100], [111], and [112] SiNWs. Our systematic ab initio study suggests that the Si-Li interaction is weaker when the Si-Li bond direction is aligned close to the SiNW long axis. This results in the [110] and [111] SiNWs having the highest and lowest Li binding energy, respectively, and it makes the diffusion barrier along the SiNW axis lower than other pathways. Under external strain, it was found that [110] and [001] SiNWs are the most and least sensitive, respectively. For diffusion along the axial direction, the barrier increases (decreases) under tension (compression). This feature results in a considerable difference in the magnitude of the energy barrier along different diffusion pathways. © 2011 American Chemical Society.

  15. Specific and reversible immobilization of histidine-tagged proteins on functionalized silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yi-Chi C; Rieben, Nathalie; Iversen, Lars; Martinez, Karen L [Bio-Nanotechnology Laboratory, Department of Neuroscience and Pharmacology and Nano-Science Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen Oe (Denmark); Soerensen, Brian S; Nygaard, Jesper [Niels Bohr Institute and Nano-Science Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen Oe (Denmark); Park, Jiwoong, E-mail: martinez@nano.ku.dk [Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853 (United States)

    2010-06-18

    Silicon nanowire (Si NW)-based field effect transistors (FETs) have shown great potential as biosensors (bioFETs) for ultra-sensitive and label-free detection of biomolecular interactions. Their sensitivity depends not only on the device properties, but also on the function of the biological recognition motif attached to the Si NWs. In this study, we show that SiNWs can be chemically functionalized with Ni:NTA motifs, suitable for the specific immobilization of proteins via a short polyhistidine tag (His-tag) at close proximity to the SiNW surface. We demonstrate that the proteins preserve their function upon immobilization onto SiNWs. Importantly, the protein immobilization on the Si NWs is shown to be reversible after addition of EDTA or imidazole, thus allowing the regeneration of the bioFET when needed, such as in the case of proteins having a limited lifetime. We anticipate that our methodology may find a generic use for the development of bioFETs exploiting functional protein assays because of its high compatibility to various types of NWs and proteins.

  16. Growth rate model and doping metrology by atom probe tomography in silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W.H.; Larde, R.; Cadel, E.; Pareige, P. [Groupe de Physique des Materiaux, Universite et INSA de Rouen, UMR CNRS 6634, Av. de l' Universite, BP 12, 76801 Saint Etienne du Rouvray (France); Xu, T.; Grandidier, B.; Nys, J.P.; Stievenard, D. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Departement ISEN, 41 bd Vauban, 59046 Lille Cedex (France)

    2011-03-15

    Silicon nanowires (SiNWs) with different surface number density are fabricated using Chemical Vapor Deposition (CVD) method by controlling the catalyst droplet number density with in-situ evaporation. For comparison, another type of SiNWs is fabricated by Molecular Beam Epitaxy (MBE) method. To study these two types of SiNWs a general growth rate model is presented. The fit curves from this model are consistent with our experimental data. In both growing conditions the SiNW growth rate as a function of their diameter are compared and discussed. The p-type SiNWs have also been prepared by adding diborane into precursor. The doping metrology in an individual SiNW is realized by laser assisted Atom Probe Tomography (APT). We have shown that the doping atoms (e.g. B) can incorporate into SiNW and an accurate quantification can be given (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Decoration of silicon nanowires with silver nanoparticles for ultrasensitive surface enhanced Raman scattering.

    Science.gov (United States)

    D'Andrea, Cristiano; Faro, Maria J Lo; Bertino, Giulia; Ossi, Paolo M; Neri, Fortunato; Trusso, Sebastiano; Musumeci, Paolo; Galli, Matteo; Cioffi, Nicola; Irrera, Alessia; Priolo, Francesco; Fazio, Barbara

    2016-09-16

    Silicon nanowires (Si NWs), produced by the chemical etching technique, were decorated with silver nanoparticles (NPs) produced at room temperature by the pulsed laser deposition (PLD) technique. Silver NPs were obtained by means of nanosecond pulsed laser ablation of a target in the presence of a controlled Ar atmosphere. Two different laser pulse numbers and Si NWs having different lengths were used to change the NP number density on the Si NW surface. The resulting Ag NP morphologies were studied by scanning electron microscopy imaging. The results show that this industrially compatible technological approach allows the coverage of the Si NW walls with Ag NPs with a strong control of the NP size distribution and spatial arrangement. The obtained Ag NP decorated Si NWs are free from chemicals contamination and there is no need of post deposition high temperature processes. The optical properties of Si NW arrays were investigated by reflectance spectroscopy that showed the presence of a plasmon related absorption peak, whose position and width is dependent on the Ag NP surface morphology. Coupling the huge surface-to-volume ratio of Si NW arrays with the plasmonic properties of silver nanoparticles resulted in a 3D structure suitable for very sensitive surface enhanced Raman scattering (SERS) applications, as demonstrated by the detection of Rhodamine 6G in aqueous solution at a concentration level of 10(-8) M.

  18. Decoration of silicon nanowires with silver nanoparticles for ultrasensitive surface enhanced Raman scattering

    Science.gov (United States)

    D’Andrea, Cristiano; Lo Faro, Maria J.; Bertino, Giulia; Ossi, Paolo M.; Neri, Fortunato; Trusso, Sebastiano; Musumeci, Paolo; Galli, Matteo; Cioffi, Nicola; Irrera, Alessia; Priolo, Francesco; Fazio, Barbara

    2016-09-01

    Silicon nanowires (Si NWs), produced by the chemical etching technique, were decorated with silver nanoparticles (NPs) produced at room temperature by the pulsed laser deposition (PLD) technique. Silver NPs were obtained by means of nanosecond pulsed laser ablation of a target in the presence of a controlled Ar atmosphere. Two different laser pulse numbers and Si NWs having different lengths were used to change the NP number density on the Si NW surface. The resulting Ag NP morphologies were studied by scanning electron microscopy imaging. The results show that this industrially compatible technological approach allows the coverage of the Si NW walls with Ag NPs with a strong control of the NP size distribution and spatial arrangement. The obtained Ag NP decorated Si NWs are free from chemicals contamination and there is no need of post deposition high temperature processes. The optical properties of Si NW arrays were investigated by reflectance spectroscopy that showed the presence of a plasmon related absorption peak, whose position and width is dependent on the Ag NP surface morphology. Coupling the huge surface-to-volume ratio of Si NW arrays with the plasmonic properties of silver nanoparticles resulted in a 3D structure suitable for very sensitive surface enhanced Raman scattering (SERS) applications, as demonstrated by the detection of Rhodamine 6G in aqueous solution at a concentration level of 10‑8 M.

  19. The effect of trapped charge on silicon nanowire pseudo-MOSFETs.

    Science.gov (United States)

    Nam, Incheol; Kim, Minsuk; Najam, Syed Faraz; Lee, Eunhong; Hwang, Sungwoo; Kim, Sangsig

    2013-09-01

    The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Qot = -5.0 x 10(11) cm(-2) and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 x 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.

  20. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L‑1 (cubic SiC NWs) and 5–8000 μmoL L‑1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L‑1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  1. Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires

    Science.gov (United States)

    Wagesreither, Stefan; Bertagnolli, Emmerich; Kawase, Shinya; Isono, Yoshitada; Lugstein, Alois

    2014-11-01

    In this paper we demonstrate the fabrication and application of an electrostatic actuated tensile straining test (EATEST) device enabling strain engineering in individual suspended nanowires (NWs). Contrary to previously reported approaches, this special setup guarantees the application of pure uniaxial tensile strain with no shear component of the stress while e.g. simultaneously measuring the resistance change of the NW. To demonstrate the potential of this approach we investigated the piezoresistivity of about 3 μm long and 100 nm thick SiNWs but in the same way one can think about the application of such a device on other geometries, other materials beyond Si as well as the use of other characterization techniques beyond electrical measurements. Therefore single-crystal SiNWs were monolithically integrated in a comb drive actuated MEMS device based on a silicon-on-insulator (SOI) wafer using the vapor-liquid-solid (VLS) growth technique. Strain values were verified by a precise measurement of the NW elongation with scanning electron microscopy (SEM). Further we employed confocal μ-Raman microscopy for in situ, high spatial resolution measurements of the strain in individual SiNWs during electrical characterization. A giant piezoresistive effect was observed, resulting in a fivefold increase in conductivity for 3% uniaxially strained SiNWs. As the EATEST approach can be easily integrated into an existing Si technology platform this architecture may pave the way toward a new generation of nonconventional devices by leveraging the strain degree of freedom.

  2. Silicon nanowire based biosensing platform for electrochemical sensing of Mebendazole drug activity on breast cancer cells.

    Science.gov (United States)

    Shashaani, Hani; Faramarzpour, Mahsa; Hassanpour, Morteza; Namdar, Nasser; Alikhani, Alireza; Abdolahad, Mohammad

    2016-11-15

    Electrochemical approaches have played crucial roles in bio sensing because of their Potential in achieving sensitive, specific and low-cost detection of biomolecules and other bio evidences. Engineering the electrochemical sensing interface with nanomaterials tends to new generations of label-free biosensors with improved performances in terms of sensitive area and response signals. Here we applied Silicon Nanowire (SiNW) array electrodes (in an integrated architecture of working, counter and reference electrodes) grown by low pressure chemical vapor deposition (LPCVD) system with VLS procedure to electrochemically diagnose the presence of breast cancer cells as well as their response to anticancer drugs. Mebendazole (MBZ), has been used as antitubulin drug. It perturbs the anodic/cathodic response of the cell covered biosensor by releasing Cytochrome C in cytoplasm. Reduction of cytochrome C would change the ionic state of the cells monitored by SiNW biosensor. By applying well direct bioelectrical contacts with cancer cells, SiNWs can detect minor signal transduction and bio recognition events, resulting in precise biosensing. Our device detected the trace of MBZ drugs (with the concentration of 2nM) on electrochemical activity MCF-7 cells. Also, experimented biological analysis such as confocal and Flowcytometry assays confirmed the electrochemical results. PMID:27196254

  3. A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111 and Their Optical Absorption

    Directory of Open Access Journals (Sweden)

    Tzuen-Wei Ho

    2012-01-01

    Full Text Available In this study we grew silicon nanowires (SiNWs on Si (111 substrate by gold-catalyzed vapor liquid solid (VLS process using tetrachlorosilane (SiCl4 in a hot-wall chemical vapor deposition reactor. SiNWs with 150–200 nm diameters were found to grow along the orientations of all 〈111〉 family, including the vertical and the inclined, on Si (111. The effects of various process conditions, including SiCl4 concentration, SiCl4 feeding temperature, H2 annealing, and ramp cooling, on the crystal quality and growth orientation of SiNWs, were studied to optimize the growth conditions. Furthermore, a novel method was developed to reliably grow vertically aligned SiNWs on Si (111 utilizing the principle of liquid phase epitaxy (LPE. A ramp-cooling process was employed to slowly precipitate the epitaxial Si seeds on Si (111 after H2 annealing at 650°C. Then, after heating in SiCl4/H2 up to 850°C to grow SiNWs, almost 100% vertically aligned SiNWs could be achieved reproducibly. The high degree of vertical alignment of SiNWs is effective in reducing surface reflection of solar light with the reflectance decreasing with increasing the SiNWs length. The vertically aligned SiNWs have good potentials for solar cells and nano devices.

  4. Toward Intraoperative Detection of Disseminated Tumor Cells in Lymph Nodes with Silicon Nanowire Field Effect Transistors.

    Science.gov (United States)

    Tran, Duy P; Winter, Marnie A; Wolfrum, Bernhard; Stockmann, Regina; Yang, Chih-Tsung; Pourhassan-Moghaddam, Mohammad; Offenhäusser, Andreas; Thierry, Benjamin

    2016-02-23

    Within an hour, as little as one disseminated tumor cell (DTC) per lymph node can be quantitatively detected using an intraoperative biosensing platform based on silicon nanowire field-effect transistors (SiNW FET). It is also demonstrated that the integrated biosensing platform is able to detect the presence of circulating tumor cells (CTCs) in the blood of colorectal cancer patients. The presence of DTCs in lymph nodes and CTCs in peripheral blood is highly significant as it is strongly associated with poor patient prognosis. The SiNW FET sensing platform out-performed in both sensitivity and rapidity not only the current standard method based on pathological examination of tissue sections but also the emerging clinical gold standard based on molecular assays. The possibility to achieve accurate and highly sensitive analysis of the presence of DTCs in the lymphatics within the surgery time frame has the potential to spare cancer patients from an unnecessary secondary surgery, leading to reduced patient morbidity, improving their psychological wellbeing and reducing time spent in hospital. This study demonstrates the potential of nanoscale field-effect technology in clinical cancer diagnostics. PMID:26859618

  5. Complementary metal oxide semiconductor-compatible silicon nanowire biofield-effect transistors as affinity biosensors.

    Science.gov (United States)

    Duan, Xuexin; Rajan, Nitin K; Izadi, Mohammad Hadi; Reed, Mark A

    2013-11-01

    Affinity biosensors use biorecognition elements and transducers to convert a biochemical event into a recordable signal. They provides the molecule binding information, which includes the dynamics of biomolecular association and dissociation, and the equilibrium association constant. Complementary metal oxide semiconductor-compatible silicon (Si) nanowires configured as a field-effect transistor (NW FET) have shown significant advantages for real-time, label-free and highly sensitive detection of a wide range of biomolecules. Most research has focused on reducing the detection limit of Si-NW FETs but has provided less information about the real binding parameters of the biomolecular interactions. Recently, Si-NW FETs have been demonstrated as affinity biosensors to quantify biomolecular binding affinities and kinetics. They open new applications for NW FETs in the nanomedicine field and will bring such sensor technology a step closer to commercial point-of-care applications. This article summarizes the recent advances in bioaffinity measurement using Si-NW FETs, with an emphasis on the different approaches used to address the issues of sensor calibration, regeneration, binding kinetic measurements, limit of detection, sensor surface modification, biomolecule charge screening, reference electrode integration and nonspecific molecular binding. PMID:24156488

  6. Rapid Low-Temperature 3D Integration of Silicon Nanowires on Flexible Substrates.

    Science.gov (United States)

    Kim, Yoonkap; Kim, Han-Jung; Kim, Jae-Hyun; Choi, Dae-Geun; Choi, Jun-Hyuk; Jung, Joo-Yun; Jeon, Sohee; Lee, Eung-Sug; Jeong, Jun-Ho; Lee, Jihye

    2015-08-26

    The vertical integration of 1D nanostructures onto the 2D substrates has the potential to offer significant performance gains to flexible electronic devices due to high integration density, large surface area, and improved light absorption and trapping. A simple, rapid, and low temperature transfer bonding method has been developed for this purpose. Ultrasonic vibration is used to achieve a low temperature bonding within a few seconds, resulting in a polymer-matrix-free, electrically conducting vertical assembly of silicon nanowires (SiNWs) with a graphene/PET substrate. The microscopic structure, and mechanical and electrical characteristics of the interface between the transferred SiNW array and graphene layer are subsequently investigated, revealing that this creates a mechanically robust and electrically Ohmic contact. This newly developed ultrasonic transfer bonding technique is also found to be readily adaptable for diverse substrates of both metal and polymer. It is therefore considered as a valuable technique for integrating 1D vertical nanostructures onto the 2D flexible substrates for flexible photovoltaics, energy storage, and water splitting systems.

  7. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  8. Ultra-Low Breakdown Voltage of Field Ionization in Atmospheric Air Based on Silicon Nanowires

    International Nuclear Information System (INIS)

    Classic field ionization requires extremely high positive electric fields, of the order of a few million volts per centimeter. Here we show that field ionization can occur at dramatically lower fields on the electrode of silicon nanowires (SiNWs) with dense surface states and large field enhancement factor. A field ionization structure using SiNWs as the anode has been investigated, in which the SiNWs were fabricated by improved chemical etching process. At room temperature and atmospheric pressure, breakdown of the air is reproducible with a fixed anode-to-cathode distance of 0.5 μm. The breakdown voltage is ∼38 V, low enough to be achieved by a battery-powered unit. Two reasons can be given for the low breakdown voltage. First, the gas discharge departs from the Paschen's law and the breakdown voltage decreases sharply as the gap distance falls in μm range. The other reason is the large electric field enhancement factor (β) and the high density of surface defects, which cause a highly non-uniform electric field for field emission to occur

  9. Switchable bioelectronics on graphene interface (Presentation Recording)

    Science.gov (United States)

    Parlak, Onur; Tiwari, Ashutosh; Turner, Anthony P. F.

    2015-08-01

    Smart and flexible bioelectronics on graphene have emerged as a new frontier in the field of biosensors and bioelectronics. Graphene has begun to be seen as an ideal signal transducer and a promising alternative for the production of low-cost bioelectronic devices.1-2 However, biological systems used in these devices suffer from a lack of control and regulation. There is an obvious need to develop "switchable" and "smart" interfaces for both fundamental and applied studies. Here, we report the fabrication of a stimuli-responsive graphene interface, which is used to regulate biomolecular reactions. The present study aims to address the design and development of a novel auto-switchable graphene bio-interface that is capable of positively responding, by creating smart nanoarchitectures. By changing the external conditions such as temperature, light and pH of the medium, we acheived control of the biochemical interactions. In the negative mode, access of an associated enzyme to its substrate is largely restricted, resulting in a decrease in the diffusion of reactants and the consequent activity of the system. In contrast, the biosubstrate could freely access the enzyme facilitating bioelectrocatalysis in a positive response. Using electrochemical techniques, we demonstrated that interfacial bio-electrochemical properties can be tuned by modest changes in conditions. Such an ability to independently regulate the behaviour of the interface has important implications for the design of novel bioreactors, biofuel cells and biosensors with inbuilt self-control features.

  10. Enhanced Photoelectrical Response of Hydrogenated Amorphous Silicon Single-Nanowire Solar Cells by Front-Opening Crescent Design.

    Science.gov (United States)

    Yang, Zhenhai; Cao, Guoyang; Shang, Aixue; Lei, Dang Yuan; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

    2016-12-01

    We report an approach for substantially enhancing the light-trapping and photoconversion efficiency of hydrogenated amorphous silicon (a-Si:H) single-nanowire solar cells (SNSCs) by engineering the cross section of the nanowire from circular into a front-opening crescent shape. The proposed SNSCs show a broadband and highly tunable optical absorption compared to the conventional circular counterparts under both transverse electric and transverse magnetic incidences, enabling an enhancement ratio of over 40 % in both the photocurrent density and the photoconversion efficiency in a-Si:H SNSCs with a diameter of 200 nm. We further show that the superior performance can be well maintained under a wide range of incident angle and is robust to the blunt crescent edges. PMID:27129685

  11. Enhanced Photoelectrical Response of Hydrogenated Amorphous Silicon Single-Nanowire Solar Cells by Front-Opening Crescent Design

    Science.gov (United States)

    Yang, Zhenhai; Cao, Guoyang; Shang, Aixue; Lei, Dang Yuan; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

    2016-04-01

    We report an approach for substantially enhancing the light-trapping and photoconversion efficiency of hydrogenated amorphous silicon (a-Si:H) single-nanowire solar cells (SNSCs) by engineering the cross section of the nanowire from circular into a front-opening crescent shape. The proposed SNSCs show a broadband and highly tunable optical absorption compared to the conventional circular counterparts under both transverse electric and transverse magnetic incidences, enabling an enhancement ratio of over 40 % in both the photocurrent density and the photoconversion efficiency in a-Si:H SNSCs with a diameter of 200 nm. We further show that the superior performance can be well maintained under a wide range of incident angle and is robust to the blunt crescent edges.

  12. Enhancing the heralded single-photon rate from a silicon nanowire by time and wavelength division multiplexing pump pulses.

    Science.gov (United States)

    Zhang, X; Jizan, I; He, J; Clark, A S; Choi, D-Y; Chae, C J; Eggleton, B J; Xiong, C

    2015-06-01

    Heralded single photons produced on a silicon chip represent an integrated photon source solution for scalable photonic quantum technologies. The key limitation of such sources is their non-deterministic nature introduced by the stochastic spontaneous four-wave mixing (SFWM) process. Active spatial and temporal multiplexing can improve this by enhancing the single-photon rate without degrading the quantum signal-to-noise ratio. Here, taking advantage of the broad bandwidth of SFWM in a silicon nanowire, we experimentally demonstrate heralded single-photon generation from a silicon nanowire pumped by time and wavelength division multiplexed pulses. We show a 90±5% enhancement on the heralded photon rate at the cost of only 14±2% reduction to the signal-to-noise ratio, close to the performance found using only time division multiplexed pulses. As single-photon events are distributed to multiple wavelength channels, this new scheme overcomes the saturation limit of avalanche single-photon detectors and will improve the ultimate performance of such photon sources. PMID:26030539

  13. Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation.

    Science.gov (United States)

    Fellahi, Ouarda; Barras, Alexandre; Pan, Guo-Hui; Coffinier, Yannick; Hadjersi, Toufik; Maamache, Mustapha; Szunerits, Sabine; Boukherroub, Rabah

    2016-03-01

    We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K2Cr2O7) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO3 aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K2Cr2O7 (10(-4)M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ>420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

  14. Effect of Electrical Contact Resistance in a Silicon Nanowire Thermoelectric Cooler and a Design Guideline for On-Chip Cooling Applications

    Science.gov (United States)

    Li, Y.; Buddharaju, K.; Singh, N.; Lee, S. J.

    2013-07-01

    Contact resistance gains prominence as feature size reduces to the nanometer length scale. This work studies the effects of electrical contact resistance on the performance of silicon nanowire-based thermoelectric coolers using COMSOL Multiphysics. The values of the contact resistance used to simulate the impact are experimentally extracted from a pair of thermoelectric legs with each leg made of top-down-fabricated 100 silicon nanowires having diameter of 100 nm. Analytical models agreeing well with the simulation results are provided. Lastly, a design methodology is proposed for optimum performance in on-chip cooling applications.

  15. Non-Degenerate Four-Wave Mixing in a Silicon Nanowire and its Application for One-to-Six WDM Multicasting

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua;

    2011-01-01

    We present WDM multicasting based on non-degenerate four-wave mixing in a silicon nanowire. A one-to-six phase-preserving wavelength multicasting of 10 Gb/s differential phase-shift-keying data is experimentally demonstrated with bit-error rate measurements.......We present WDM multicasting based on non-degenerate four-wave mixing in a silicon nanowire. A one-to-six phase-preserving wavelength multicasting of 10 Gb/s differential phase-shift-keying data is experimentally demonstrated with bit-error rate measurements....

  16. Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

    2014-04-01

    Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

  17. Wavelength conversion of 28 GBaud 16-QAM signals based on four-wave mixing in a silicon nanowire.

    Science.gov (United States)

    Adams, Rhys; Spasojevic, Mina; Chagnon, Mathieu; Malekiha, Mahdi; Li, Jia; Plant, David V; Chen, Lawrence R

    2014-02-24

    We demonstrate error-free wavelength conversion of 28 GBaud 16-QAM single polarization (112 Gb/s) signals based on four-wave mixing in a dispersion engineered silicon nanowire (SNW). Wavelength conversion covering the entire C-band is achieved using a single pump. We characterize the performance of the wavelength converter subsystem through the electrical signal to noise ratio penalty as well as the bit error rate of the converted signal as a function of input signal power. Moreover, we evaluate the degradation of the optical signal to noise ratio due to wavelength conversion in the SNW. PMID:24663730

  18. A Stable Flexible Silicon Nanowire Array as Anode for High-Performance Lithium-ion Batteries

    International Nuclear Information System (INIS)

    Highlights: • A flexible SiNW array in PDMS structure is designed and fabricated as Li-ion battery anode material. • The aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton during the process of charge and discharge. • The loose SiO2 shells coating on the SiNWscould form the protective layer in charge/discharge. • The as-obtain flexible SiNW array/PDMS composite exhibits a much better cycling stability. - Abstract: A Silicon nanowire (SiNW) array inserted into flexible poly-dimethylsiloxane (SiNW array/PDMS) composite structure as anode with high capacity and long-term cycling stability is synthesized by a cost-effective and scalable method. In this structure, the aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton. Act as the main active component, the SiNWs are coated by loose SiO2 shells. These loose SiO2 shells not only provide space for the large volume changes of SiNW, but also react with the electrolyte and form the stable protective layer during the processes of the lithiation and delithiation. These two functions could improve the cycling stability and columbic efficiency of the SiNWs. The as-obtain flexible SiNW array/PDMS composite structure exhibits excellent long-term cycling stability with a specific capacity of 887.2 mA·h·g−1 and capacity retention of ∼83.4% over 350 cycles at 0.5 C rate compared with the fifteenth cycle. The design of this new structure provides a potential way for developing other functional composite materials

  19. Silicon nanowires as field-effect transducers for biosensor development: A review

    Energy Technology Data Exchange (ETDEWEB)

    Noor, M. Omair; Krull, Ulrich J., E-mail: ulrich.krull@utoronto.ca

    2014-05-01

    Highlights: • Nanoscale field-effect transducers interrogate surface charge by conductivity changes. • The nanometer dimensions of SiNWs facilitate sensitive detection of biomolecules. • SiNWs can be fabricated by bottom–up or top–down approaches. • Device parameters and solution-phase conditions strongly influence analytical performance. - Abstract: The unique electronic properties and miniaturized dimensions of silicon nanowires (SiNWs) are attractive for label-free, real-time and sensitive detection of biomolecules. Sensors based on SiNWs operate as field effect transistors (FETs) and can be fabricated either by top–down or bottom–up approaches. Advances in fabrication methods have allowed for the control of physicochemical and electronic properties of SiNWs, providing opportunity for interfacing of SiNW-FET probes with intracellular environments. The Debye screening length is an important consideration that determines the performance and detection limits of SiNW-FET sensors, especially at physiologically relevant conditions of ionic strength (>100 mM). In this review, we discuss the construction and application of SiNW-FET sensors for detection of ions, nucleic acids and protein markers. Advantages and disadvantages of the top–down and bottom–up approaches for synthesis of SiNWs are discussed. An overview of various methods for surface functionalization of SiNWs for immobilization of selective chemistry is provided in the context of impact on the analytical performance of SiNW-FET sensors. In addition to in vitro examples, an overview of the progress of use of SiNW-FET sensors for ex vivo studies is also presented. This review concludes with a discussion of the future prospects of SiNW-FET sensors.

  20. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels. PMID:27598429

  1. Influence of the polymer matrix on the efficiency of hybrid solar cells based on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ben Dkhil, S., E-mail: sadok.bendekhil@gmail.com [Laboratoire Physique des Materiaux: Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Ingenierie des Materiaux Polymeres: IMP, UMR CNRS 5223, Universite Claude Bernard Lyon 1, 15 boulevard Latarjet, 69622 Villeurbanne (France); Bourguiga, R. [Laboratoire Physique des Materiaux: Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Davenas, J. [Ingenierie des Materiaux Polymeres: IMP, UMR CNRS 5223, Universite Claude Bernard Lyon 1, 15 boulevard Latarjet, 69622 Villeurbanne (France); Cornu, D. [Institut Europeen des Membranes, UMR CNRS 5635, Ecole Nationale superieure de Chimie, Universite de Montpellier, 1919 route de Mende, 34000 Montpellier (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Hybrid solar cells based on silicon nanowires have been fabricated. Black-Right-Pointing-Pointer The relation between the morphology of the composite thin films and the charge transfer between the polymer matrices and SiNWs has been examined. Black-Right-Pointing-Pointer We have investigated the effect of the polymer matrix on the photovoltaic characteristics. - Abstract: Poly (N-vinylcarbazole) (PVK):SiNWs and poly (2-methoxy, 5-(2-ethyl-hexyloxy)-p-phenyl vinylene) (MEH-PPV):SiNWs bulk-heterojunctions (BHJ) have been elaborated from blends of SiNWs and the polymer in solution from a common solvent. Optical properties of these nanocomposites have been investigated by UV-vis absorption and photoluminescence (PL) spectral measurements. We have studied the charge transfer between SiNWs and the two polymers using the photoluminescence quenching of PVK and MEH-PPV which is a convenient signature of the reduced radiative recombination of the generated charge pairs upon exciton dissociation. We found that PVK and SiNWs constitutes the better donor-acceptor system. In order to understand the difference between PVK:SiNWs or MEH-PPV:SiNWs behaviours, photoluminescence responses were correlated with the topography (SEM) of the thin films. The photovoltaic effect of ITO/PEDOT:PSS/SiNWs:PVK/Al and ITO/PEDOT:PSS/SiNWs:MEH-PPV/Al structures was studied by current-voltage (I-V) measurements in dark and under illumination and interpreted on the basis of the charge transfer differences resulting from the morphologies.

  2. Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

    Science.gov (United States)

    Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

    2015-07-01

    Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si. PMID:26057208

  3. Toxicity of silicon carbide nanowires to sediment-dwelling invertebrates in water or sediment exposures

    Science.gov (United States)

    Mwangi, Joseph N.; Wang, Ning; Ritts, Andrew; Kunz, James L.; Ingersoll, Christopher G.; Li, Hao; Deng, Baolin

    2011-01-01

    Silicon carbide nanowires (SiCNW) are insoluble in water. When released into an aquatic environment, SiCNW would likely accumulate in sediment. The objective of this study was to assess the toxicity of SiCNW to four freshwater sediment-dwelling organisms: amphipods (Hyalella azteca), midges (Chironomus dilutus), oligochaetes (Lumbriculus variegatus), and mussels (Lampsilis siliquoidea). Amphipods were exposed to either sonicated or nonsonicated SiCNW in water (1.0 g/L) for 48 h. Midges, mussels, and oligochaetes were exposed only to sonicated SiCNW in water for 96 h. In addition, amphipods were exposed to sonicated SiCNW in whole sediment for 10 d (44% SiCNW on dry wt basis). Mean 48-h survival of amphipods exposed to nonsonicated SiCNW in water was not significantly different from the control, whereas mean survival of amphipods exposed to sonicated SiCNW in two 48-h exposures (0 or 15% survival) was significantly different from the control (90 or 98% survival). In contrast, no effect of sonicated SiCNW was observed on survival of midges, mussels, or oligochaetes. Survival of amphipods was not significantly reduced in 10-d exposures to sonicated SiCNW either mixed in the sediment or layered on the sediment surface. However, significant reduction in amphipod biomass was observed with the SiCNW either mixed in sediment or layered on the sediment surface, and the reduction was more pronounced for SiCNW layered on the sediment. These results indicated that, under the experimental conditions, nonsonicated SiCNW in water were not acutely toxic to amphipods, sonicated SiCNW in water were acutely toxic to the amphipods, but not to other organisms tested, and sonicated SiCNW in sediment affected the growth but not the survival of amphipods.

  4. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

  5. Surface potential variations on a silicon nanowire transistor in biomolecular modification and detection

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Chia-Chang; Chiang, Pei-Ling; Lin, Tsung-Wu; Chen, Yit-Tsong [Institute of Atomic and Molecular Sciences, Academia Sinica, PO Box 23-166, Taipei 106, Taiwan (China); Sun, Chih-Jung; Tsai, Ming-Hsueh [Department of Chemistry, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Chang, Yun-Chorng, E-mail: ychang6@mail.ncku.edu.tw, E-mail: ytcchem@ntu.edu.tw [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan 701, Taiwan (China)

    2011-04-01

    Using a silicon nanowire field-effect transistor (SiNW-FET) for biomolecule detections, we selected 3-(mercaptopropyl)trimethoxysilane (MPTMS), N-[6-(biotinamido)hexyl]-3{sup '}-(2{sup '}-pyridyldithio) propionamide (biotin-HPDP), and avidin, respectively, as the designated linker, receptor, and target molecules as a study model, where the biotin molecules were modified on the SiNW-FET to act as a receptor for avidin. We applied high-resolution scanning Kelvin probe force microscopy (KPFM) to detect the modified/bound biomolecules by measuring the induced change of the surface potential ({Delta}{Phi}{sup s}) on the SiNW-FET under ambient conditions. After biotin-immobilization and avidin-binding, the {Delta}{Phi}{sup s} on the SiNW-FET characterized by KPFM was demonstrated to correlate to the conductance change inside the SiNW-FET acquired in aqueous solution. The {Delta}{Phi}{sup s} values on the SiNW-FET caused by the same biotin-immobilization and avidin-binding were also measured from drain current versus gate voltage curves (I{sub d}-V{sub g}) in both aqueous condition and dried state. For comparison, we also study the {Delta}{Phi}{sup s} values on a Si wafer caused by the same biotin-immobilization and avidin-binding through KPFM and {zeta} potential measurements. This study has demonstrated that the surface potential measurement on a SiNW-FET by KPFM can be applied as a diagnostic tool that complements the electrical detection with a SiNW-FET sensor. Although the KPFM experiments were carried out under ambient conditions, the measured surface properties of a SiNW-FET are qualitatively valid compared with those obtained by other biosensory techniques performed in liquid environment.

  6. Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wanghua; Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM), UMR 7647, CNRS, Ecole Polytechnique, 91128 Palaiseau (France); Pareige, Philippe; Castro, Celia [Groupe de Physique des Matériaux (GPM), Université et INSA de Rouen, UMR 6634, CNRS, Av. de l' Université, BP 12, 76801 Saint Etienne du Rouvray (France); Xu, Tao; Grandidier, Bruno; Stiévenard, Didier [Institut d' Electronique et de Microélectronique et de Nanotechnologies (IEMN), UMR 8520, CNRS, Département ISEN, 41 bd Vauban, 59046 Lille Cedex (France)

    2015-09-14

    By correlating atom probe tomography with other conventional microscope techniques (scanning electron microscope, scanning transmission electron microscope, and scanning tunneling microscopy), the distribution and composition of Au clusters in individual vapor-liquid-solid grown Si nanowires is investigated. Taking advantage of the characteristics of atom probe tomography, we have developed a sample preparation method by inclining the sample at certain angle to characterize the nanowire sidewall without using focused ion beam. With three-dimensional atomic scale reconstruction, we provide direct evidence of Au clusters tending to remain on the nanowire sidewall rather than being incorporated into the Si nanowires. Based on the composition measurement of Au clusters (28% ± 1%), we have demonstrated the supersaturation of Si atoms in Au clusters, which supports the hypothesis that Au clusters are formed simultaneously during nanowire growth rather than during the cooling process.

  7. Control of the micrometric scale morphology of silicon nanowires through ion irradiation-induced metal dewetting

    Science.gov (United States)

    Lo Savio, R.; Repetto, L.; Guida, P.; Angeli, E.; Firpo, G.; Volpe, A.; Ierardi, V.; Valbusa, U.

    2016-08-01

    We propose ion-induced dewetting of Au thin films as a mechanism to modify and control the morphology of Si nanowires formed through metal-assisted chemical etching. We show that the patterns formed upon irradiation resemble those typical of dewetting phenomena, with a characteristic length in the nanometer range. Irradiated Au films are then used as a template for the fabrication of Si nanowires, and we show that a long-range order exists also in etched substrates, although at much longer length scales in the micrometer range. Investigation of the optical properties reveals that the Si nanowires emit broadband photoluminescence peaked at 700 nm. The proposed synthesis method allows tuning the morphological features of the nanowire bundles at the nanoscale without affecting the optical properties. This approach can be exploited for the engineering of nanowires-based devices where the morphological features become important.

  8. Dopant Diffusion and Activation in Silicon Nanowires Fabricated by ex Situ Doping: A Correlative Study via Atom-Probe Tomography and Scanning Tunneling Spectroscopy.

    Science.gov (United States)

    Sun, Zhiyuan; Hazut, Ori; Huang, Bo-Chao; Chiu, Ya-Ping; Chang, Chia-Seng; Yerushalmi, Roie; Lauhon, Lincoln J; Seidman, David N

    2016-07-13

    Dopants play a critical role in modulating the electric properties of semiconducting materials, ranging from bulk to nanoscale semiconductors, nanowires, and quantum dots. The application of traditional doping methods developed for bulk materials involves additional considerations for nanoscale semiconductors because of the influence of surfaces and stochastic fluctuations, which may become significant at the nanometer-scale level. Monolayer doping is an ex situ doping method that permits the post growth doping of nanowires. Herein, using atom-probe tomography (APT) with subnanometer spatial resolution and atomic-ppm detection limit, we study the distributions of boron and phosphorus in ex situ doped silicon nanowires with accurate control. A highly phosphorus doped outer region and a uniformly boron doped interior are observed, which are not predicted by criteria based on bulk silicon. These phenomena are explained by fast interfacial diffusion of phosphorus and enhanced bulk diffusion of boron, respectively. The APT results are compared with scanning tunneling spectroscopy data, which yields information concerning the electrically active dopants. Overall, comparing the information obtained by the two methods permits us to evaluate the diffusivities of each different dopant type at the nanowire oxide, interface, and core regions. The combined data sets permit us to evaluate the electrical activation and compensation of the dopants in different regions of the nanowires and understand the details that lead to the sharp p-i-n junctions formed across the nanowire for the ex situ doping process.

  9. Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

    Science.gov (United States)

    Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

    2016-06-28

    Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

  10. Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

    Science.gov (United States)

    Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

    2016-06-28

    Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect. PMID:27276167

  11. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

    Science.gov (United States)

    Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

    2016-03-01

    Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links. PMID:26901448

  12. A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

    Directory of Open Access Journals (Sweden)

    Kögler Reinhard

    2009-01-01

    Full Text Available Abstract We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm−3, while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm−3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.

  13. Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates

    Science.gov (United States)

    Lew, Kok-Keong; Redwing, Joan M.

    2003-06-01

    The fabrication of Si nanowires has been demonstrated using a combination of template-directed synthesis and vapor-liquid-solid (VLS) growth. The use of nanoporous alumina membranes for VLS growth provides control over nanowire diameter while also enabling the production of single crystal material. An investigation of the growth characteristics of Si nanowires over a temperature range from 400°C to 600°C, and over a SiH 4 partial pressure range from 0.13 to 0.65 Torr was carried out. The length of Si nanowires was found to be linearly dependent on growth time over this range of conditions. The nanowire growth rate increased from 0.068 μm/min at 400°C to 0.52 μm/min at 500°C at a constant SiH 4 partial pressure of 0.65 Torr. At temperatures greater than 500°C, Si deposited on the top surface and pore walls of the membrane thereby reducing the nanowire growth rate. The growth rate versus temperature data was used to calculate an activation energy of 22 kcal/mol for the nanowire growth process. This activation energy is believed to be associated with the decomposition of SiH 4 on the Au-Si liquid surface, which is considered to be the rate-determining step in the VLS growth process.

  14. Enhancement of Capture Sensitivity for Circulating Tumor Cells in a Breast Cancer Patient's Blood by Silicon Nanowire Platform.

    Science.gov (United States)

    Kim, Dong-Joo; Choi, Mun-Ki; Jeong, Jin-Tak; Lim, Jung-Taek; Lee, Han-Byoel; Han, Wonshik; Lee, Sang-Kwon

    2016-04-01

    The separation of circulating tumor cells (CTCs) from the blood of cancer patients with high sensitivity is an essential technique for selecting chemotherapeutic agents at a patient-by-patient level. Recently, various research groups have reported a nanostructure-based platform for rare cell capture due to its high surface area and 3D nanotopographic features. However, evaluation of capture sensitivity based on chemical modification of the nanostructure surface has not yet been performed. Here, we evaluated the capture sensitivity for CTCs from the blood of three patients diagnosed with stage IV metastatic breast cancer by using the following three platforms: streptavidin-conjugated silicon nanowire (STR-SiNW), poly-l-lysine-coated silicon nanowire (PLL-SiNW), and poly-l-lysine-coated glass (PLL-glass). The number of evaluated CTCs on STR-SiNW, PLL-SiNW, and PLL-glass were 16.2 ± 5.5 cells, 7.3 ± 2.9 cells, and 4.7 ± 1.5 cells, respectively, per 0.5 ml. Therefore, we suggest that the STR-SiNW platform is highly adaptable for the quantitative evaluation of CTCs from the blood of cancer patients in the clinical setting.

  15. Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

    Science.gov (United States)

    Carnevale, S. D.; Marginean, C.; Phillips, P. J.; Kent, T. F.; Sarwar, A. T. M. G.; Mills, M. J.; Myers, R. C.

    2012-04-01

    Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry, these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure, and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5 × 105 A/cm2.

  16. Silicon nanowires made via macropore etching for superior Li ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Ossei-Wusu, Emmanuel; Cojocaru, Ala; Hartz, Hauke; Carstensen, Juergen; Foell, Helmut [Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel (Germany)

    2011-06-15

    The future of electro mobility depends critically on substantially improved Li ion batteries. Si as anode material has a more than tenfold higher capacity as compared to the standard graphite anode, but needs to be nanostructured to avoid fracture. It is shown that macropore etching combined with suitable follow-up processes allows to produce nanowire arrays with optimized geometries. First tests of these anodes showed very promising results with respect to prime battery parameters like capacity and capacity losses during cycling. In particular, a first test battery showed superior performance for more than 60 cycles in comparison to an otherwise identical battery with a graphite anode. Critical processes like galvanic Cu deposition at the nanowire bottom can be avoided by using an optimized pore etching process that produces complex pore diameter profiles as a function of depth, allowing easy separation of the nanowire layer from the Si substrate and processing the nanowire surface area. In total, the production of Si nanowire anodes using this improved process should allow mass production at competitive costs. Si nanowire array for use as a high-capacity anode in a Li ion battery. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. In situ nanoscale refinement by highly controllable etching of the(111)silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire

    Institute of Scientific and Technical Information of China (English)

    Gong Yibin; Dai Pengfei; Gao Anran; Li Tie; Zhou Ping; Wang Yuelin

    2011-01-01

    Nanoscale refinement on a(100)oriented silicon-on-insulator(SOI)wafer was introduced by using tetra-methyl-ammonium hydroxide(TMAH,25 wt%)anisotropic silicon etchant,with temperature kept at 50 ℃ to achieve precise etching of the(111)crystal plane.Specifically for a silicon nanowire(SiNW)with oxide sidewall protection,the in situ TMAH process enabled effective size reduction in both lateral(2.3 nm/min)and vertical (1.7 nm/min)dimensions.A sub-50 nm SiNW with a length of microns with uniform triangular cross-section was achieved accordingly,yielding enhanced field effect transistor(FET)characteristics in comparison with its 100 nmwide pre-refining counterpart,which demonstrated the feasibility of this highly controllable refimement process.Detailed examination revealed that the high surface quality of the(111)plane,as well as the bulk depletion property should be the causes of this electrical enhancement,which implies the great potential of the as-made cost-effective SiNW FET device in many fields.

  18. Chemical Sensing with Nanowires

    Science.gov (United States)

    Penner, Reginald M.

    2012-07-01

    Transformational advances in the performance of nanowire-based chemical sensors and biosensors have been achieved over the past two to three years. These advances have arisen from a better understanding of the mechanisms of transduction operating in these devices, innovations in nanowire fabrication, and improved methods for incorporating receptors into or onto nanowires. Nanowire-based biosensors have detected DNA in undiluted physiological saline. For silicon nanowire nucleic acid sensors, higher sensitivities have been obtained by eliminating the passivating oxide layer on the nanowire surface and by substituting uncharged protein nucleic acids for DNA as the capture strands. Biosensors for peptide and protein cancer markers, based on both semiconductor nanowires and nanowires of conductive polymers, have detected these targets at physiologically relevant concentrations in both blood plasma and whole blood. Nanowire chemical sensors have also detected several gases at the parts-per-million level. This review discusses these and other recent advances, concentrating on work published in the past three years.

  19. Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

    Science.gov (United States)

    AL-Zoubi, Omar H.

    Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

  20. New Nanobiocomposite Materials for Bioelectronic Devices

    Science.gov (United States)

    Pankratov, D. V.; González-Arribas, E.; Parunova, Yu. M.; Gorbacheva, M. A.; Zeyfman, Yu. S.; Kuznetsov, S. V.; Lipkin, A. V.; Shleev, S. V.

    2015-01-01

    We have developed and synthesized nanobiocomposite materials based on graphene, poly(3,4-ethylenedioxythiophene), and glucose oxidase immobilized on the surface of various nanomaterials (gold nanoparticles and multi-walled carbon nanotubes) of different sizes (carbon nanotubes of different diameters). Comparative studies of the possible influence of the nanomaterial’s nature on the bioelectrocatalytic characteristics of glucose- oxidizing bioanodes in a neutral phosphate buffer solution demonstrated that the bioelectrocatalytic current densities of nanocomposite-based bioanodes are only weakly dependent on the size of the nanomaterial and are primarily defined by its nature. The developed nanobiocomposites are promising materials for new bioelectronic devices due to the ease in adjusting their capacitive and bioelectrocatalytic characteristics, which allows one to use them for the production of dual-function electrodes: i.e., electrodes which are capable of generating and storing electric power simultaneously. PMID:25927006

  1. pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces

    Science.gov (United States)

    Cloarec, Jean-Pierre; Chevalier, Céline; Genest, Jonathan; Beauvais, Jacques; Chamas, Hassan; Chevolot, Yann; Baron, Thierry; Souifi, Abdelkader

    2016-07-01

    pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at pH 2.8; and they were mainly anchored on SiO2 at pH 2. A theoretical model based on DLVO theory and surface protonation/deprotonation equilibria was used to study how, in adequate pH conditions, Si nanowires could be anchored onto specific regions of a patterned Si3N4/SiO2 surface. Instead of using capillary forces, or hydrophilic/hydrophobic contrast between the two types of materials, the specificity of immobilization could rely on surface electric charge contrasts between Si3N4 and SiO2. This simple and generic method could be used for addressing a large diversity of nano-objects onto patterned substrates.

  2. Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

    Science.gov (United States)

    Barraud, Sylvain

    2009-09-01

    Various theoretical formulations are proposed for investigating the carrier transport in nanoscale electronic devices. In this paper, a discrete formulation of the Wigner transport equation (WTE) for the self-consistent simulation of phase-coherent quantum transport in silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) devices is presented. The device is simulated using an effective-mass Hamiltonian within the mode-space approximation. The numerical scheme proposed in this work solves self-consistently three dimensional Poisson's equation, two dimensional Schrödinger's equation in each cross-sectional plane of the nanowire, and the steady-state one dimensional WTE for each conduction mode to handle the quantum transport along the channel. Details on numerical implementation of the Wigner function method are given, and the results are compared with those of the nonequilibrium Green's function (NEGF) method in the ballistic limit. The calculations of current-voltage electrical characteristics of surround-gated silicon nanowires are performed using both NEGF and WTE formulations. The good agreement observed between these approaches means that a direct solution of the WTE is an accurate simulation method for modeling the ballistic quantum transport in silicon nanowire MOSFETs.

  3. High-k materials in the electrolyte/insulator/silicon configuration. Characterization and application in bio-electronics; Hoch-k-Materialien in der Elektrolyt/Isolator/Silizium-Konfiguration. Charakterisierung und Anwendung in der Bioelektronik

    Energy Technology Data Exchange (ETDEWEB)

    Wallrapp, F.

    2006-12-19

    In order to elicit action potentials in nerve cells adhered on electrodes, a certain current is required across the electrode. Electrochemical reactions may cause damage to cells and electrodes. This is evaded by using silicon electrodes which are insulated by a dielectric. In doing so, only capacitive current is flowing, and electrochemical are avoided. The aim of this work was to fabricate novel stimulation chips exhibiting an enhanced capacitance which render new biological applications possible. These chips were to be characterized and used for the stimulation of cells. The formerly used dielectric SiO{sub 2} was replaced by HfO{sub 2} and TiO{sub 2}, with both of them featuring a higher dielectric constant. They were deposited on the silicon substrate by ALD (atomic layer deposition). The chips were characterized in the electrolyte/insulator/semiconductor (EIS) configuration. Owing to the low leakage current of the EIS configuration, the characterization of the high-k materials was possible in more detail as compared to using a metallic top contact (MIS configuration). The voltage-dependent capacitances of the HfO{sub 2} films could be interpreted by means of a common metal/SiO{sub 2}/silicon system. In contrast, the TiO{sub 2} films exhibited interesting properties which could only be rationalized with the help of numerical calculations assuming free electrons in the TiO{sub 2}. The low-lying conduction band of TiO{sub 2} caused accumulation of electrons within the TiO{sub 2} for certain voltages, which led to an enhanced capacitance. The effects of high voltages, frequency, film thickness and interlayer composition were examined and brought into compliance with the model. The novel TiO{sub 2} stimulation devices featured a five-fold capacitance increase as compared to former SiO{sub 2} chips. Using them, two fundamental stimulation mechanisms were induced in HEK293 cells expressing the recombinant potassium channel Kv1.3: Opening of ion channels and

  4. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  5. Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Y; Weng, X J; Kendrick, C E; Eichfeld, S M; Redwing, J M [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA 16802 (United States); Wang, X; Yu, Y A; Yoon, H P; Mayer, T S [Department of Electrical Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA 16802 (United States); Habib, Y M, E-mail: jmr31@psu.edu, E-mail: tsm2@psu.edu [Illuminex Corp., Lancaster, PA 17601 (United States)

    2011-11-04

    Single nanowire radial junction solar cell devices were fabricated using Si nanowires synthesized by Al-catalyzed vapor-liquid-solid growth of the p{sup +} core (Al auto-doping) and thin film deposition of the n{sup +}-shell at temperatures below 650 deg. C. Short circuit current densities of {approx} 11.7 mA cm{sup -2} were measured under 1-sun AM1.5G illumination, showing enhanced optical absorption. The power conversion efficiencies were limited to < 1% by the low open circuit voltage and fill factor of the devices, which was attributed to junction shunt leakage promoted by the high p{sup +}/n{sup +} doping. This demonstration of a radial junction device represents an important advance in the use of Al-catalyzed Si nanowire growth for low cost photovoltaics.

  6. Comparative Study on Anti-reflection Effect between Porous Silicon and Silicon Nanowires%多孔硅和硅纳米线的减反性能对比研究

    Institute of Scientific and Technical Information of China (English)

    郭萍; 孙凤梅; 张渊; 夏兵

    2012-01-01

    By anode electrochemical etching or wet chemical etching, porous silicon and silicon nanowires were prepared, respectively. After oxidation by air plasma, these two samples were characterized by scanning electron microscope, infrared spectrum. Finally, the antireflection effect of porous silicon and silicon nanowires were measured, which indicated silicon nanowires had better anti-reflection effect.%基于单晶硅材料,通过阳极电化学腐蚀法制得多孔硅材料,通过湿化学刻蚀法制得硅纳米线材料,经过空气等离子体氧化处理后,采用扫描电子显微镜、傅里叶红外光谱仪对样品的化学组分以及表面微观结构进行了表征.最后对多孔硅和硅纳米线材料的减反效果进行对比,结果表明,硅纳米线具有更优越的减反效果.

  7. Effect of added silicon carbide nanowires and carbon nanotubes on mechanical properties of 0-3 natural rubber composites

    Science.gov (United States)

    Janyakunmongkol, Khantichai; Nhuapeng, Wim; Thamjaree, Wandee

    2016-01-01

    In this work, the mechanical properties of 0-3 nanocomposite materials containing silicon carbide nanowires (SiCNWs), carbon nanotubes (CNTs), and natural rubber were studied. The SiCNWs and CNTs were used as reinforcement fiber whereas natural rubber was used as the matrix phase. The chemical vapor depositions (CVD) was used for synthesizing the nanowire and nanotube phases. The volume fraction of reinforcement was varied from 0 to 10%. The nanophases were mixed in the natural rubber matrix and molded by the hand lay-up technique. The mechanical properties of the samples were examined and compared with those of neat natural rubber. From the results, it was found that the hardness and density of the samples increased with the quantities of nanophases. The nanocomposites with a volume fraction of 10% exhibited maximum hardness (50.5 SHORE A). The maximum tensile strength and extent of elongation at break of the samples were obtained from the 4% volume fraction sample, which were 16.13 MPa and 1,540%, respectively.

  8. Epitaxial silicon nanowire growth catalyzed by gold dot arrays from electron beam lithography patterning using silane precursors

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Bjoern; Broenstrup, Gerald; Huebner, Uwe; Christiansen, Silke [Institut fuer Photonische Technologien e.V., Abt. Halbleiter Nanostrukturen, Jena (Germany)

    2010-07-01

    Ordered arrays of silicon nanowires (SiNWs) are promising building blocks for a variety of photonic, photovoltaic and sensor applications. In our approach to create SiNWs we use electron beam lithography (EBL) and thermal metal evaporation to create nano-patterned arrays of gold nanodots on a Si(111) wafer. These Au dots are subsequently used to catalyze the bottom-up growth of SiNWs that follow the vapor-liquid-solid (VLS) growth mechanism using silane in a CVD reactor. The grown nanowires are characterized structurally using SEM, TEM and electron backscatter diffraction (EBSD). We observe epitaxial growth of the SiNWs on the Si(111) wafer and we are able to control the growth direction to be either dominated by <111> or <112> directions by just changing the silane partial pressure. The lengths as well as the diameters of the wires are precisely controlled by the EBL Au dot patterning and CVD parameters. To predict wire diameters modelling is carried out that takes into account the EBL- and CVD-parameters and describes the observed experimental results very well. Furthermore we were able to create single crystalline Au-dot arrays which are very promising structures for surface enhanced raman spectroscopy (SERS) substrates.

  9. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    International Nuclear Information System (INIS)

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs

  10. Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection

    Science.gov (United States)

    Adam, Tijjani; HAshim, U.; Dhahi, Th S.

    2015-06-01

    A functionalized silicon nanowire field-effect transistor (SiNW FET) was fabricated to detect single molecules in the pM range to detect disease at the early stage with a sensitive, robust, and inexpensive method with the ability to provide specific and reliable data. The device was designed and fabricated by indented ash trimming via shallow anisotropic etching. The approach is a simple and low-cost technique that is compatible with the current commercial semiconductor standard CMOS process without an expensive deep reactive ion etcher. Specific electric changes were observed for DNA sensing when the nanowire surface was modified with a complementary captured DNA probe and target DNA through an organic linker (-OCH2CH3) using organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES). With this surface modification, a single specific target molecule can be detected. The simplicity of the sensing domain makes it feasible to miniaturize it for the development of a cancer detection kit, facilitating its use in both clinical and non-clinical environments to allow non-expert interpretation. With its novel electric response and potential for mass commercial fabrication, this biosensor can be developed to become a portable/point of care biosensor for both field and diagnostic applications.

  11. Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Park, Inkyu, E-mail: inkyu@kaist.ac.kr [Department of Mechanical Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); KI for the NanoCentury, KAIST, Daejeon 305-701 (Korea, Republic of); Mobile Sensor and IT Convergence (MOSAIC) Center, KAIST, Daejeon 305-701 (Korea, Republic of); Choi, Yang-Kyu [Department of Electrical Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)

    2014-01-06

    A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H{sub 2}) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H{sub 2} detection. The drain current of the PdNP-decorated device reversibly responds to H{sub 2} at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.

  12. Fluorescence signals of core-shell quantum dots enhanced by single crystalline gold caps on silicon nanowires

    International Nuclear Information System (INIS)

    We use nanoscale (20-300 nm in diameter) single crystalline gold (Au)-caps on silicon nanowires (NWs) grown by the vapor-liquid-solid (VLS) growth mechanism to enhance the fluorescence photoluminescence (PL) signals of highly dilute core/shell CdSeTe/ZnS quantum dots (QDs) in aqueous solution (10-5 M). For NWs without Au-caps, as they appear, for example, after Au etching in aqua regia or buffered KI/I2-solution, essentially no fluorescence signal of the same diluted QDs could be observed. Fluorescence PL signals were measured using excitation with a laser wavelength of 633 nm. The signal enhancement by single crystalline, nanoscale Au-caps is discussed and interpreted based on finite element modeling (FEM).

  13. Off axis holography of doped and intrinsic silicon nanowires: Interpretation and influence of fields in the vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Hertog, M I den; Rouviere, J L; Gentile, P; Oehler, F [INAC/SP2M, 17 rue des Martyrs, 38052 Grenoble Cedex 9 (France); Schmid, H; Bjoerk, M T; Riel, H; Karg, S; Riess, W [IBM Research GmbH, Saeumerstrasse 4, 8803 Rueschlikon (Switzerland); Cooper, D; Dhalluin, F; Ferret, P; Rivallin, P [LETI, 17 rue des Martyrs, 38052 Grenoble Cedex 9 (France); Baron, T, E-mail: martien.den-hertog@cea.f [LTM, CNRS UMR-5129, 17 rue des Martyrs, 38052 Grenoble Cedex 9 (France)

    2010-02-01

    Intrinsic and axially modulated doped silicon nanowires (NWs) were studied by off-axis electron holography. Phase gradients in the vacuum were observed and compared to simulations of NWs with a varying charge density at the wire-oxide interface. It seems that intrinsic NWs are positively charged with a charge density around 2x10{sup 10} e.c. (electron charges) cm{sup -2} and axially modulated doped NWs (with n-doped regions) are negatively charged with a charge density around -1x10{sup 12} e.c. cm{sup -2}. Expected fringing fields around the doped regions are incidentally observed but smaller than predicted by simulations. The effect of the surface charge on the reference wave is evaluated, and should not modify the obtained phase image.

  14. Low-loss and low-crosstalk 8 × 8 silicon nanowire AWG routers fabricated with CMOS technology.

    Science.gov (United States)

    Wang, Jing; Sheng, Zhen; Li, Le; Pang, Albert; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Qi, Minghao; Gan, Fuwan

    2014-04-21

    Low-loss and low-crosstalk 8 × 8 arrayed waveguide grating (AWG) routers based on silicon nanowire waveguides are reported. A comparative study of the measurement results of the 3.2 nm-channel-spacing AWGs with three different designs is performed to evaluate the effect of each optimal technique, showing that a comprehensive optimization technique is more effective to improve the device performance than a single optimization. Based on the comprehensive optimal design, we further design and experimentally demonstrate a new 8-channel 0.8 nm-channel-spacing silicon AWG router for dense wavelength division multiplexing (DWDM) application with 130 nm CMOS technology. The AWG router with a channel spacing of 3.2 nm (resp. 0.8 nm) exhibits low insertion loss of 2.32 dB (resp. 2.92 dB) and low crosstalk of -20.5~-24.5 dB (resp. -16.9~-17.8 dB). In addition, sophisticated measurements are presented including all-input transmission testing and high-speed WDM system demonstrations for these routers. The functionality of the Si nanowire AWG as a router is characterized and a good cyclic rotation property is demonstrated. Moreover, we test the optical eye diagrams and bit-error-rates (BER) of the de-multiplexed signal when the multi-wavelength high-speed signals are launched into the AWG routers in a system experiment. Clear optical eye diagrams and low power penalty from the system point of view are achieved thanks to the low crosstalk of the AWG devices. PMID:24787827

  15. Synthesis and photoluminescence property of silicon carbide nanowires thin film by HF-PECVD system

    Indian Academy of Sciences (India)

    Zhang Enlei; Wang Guosheng; Long Xiaozhu; Wang Zhumin

    2014-10-01

    A sample and scalable synthetic strategy was developed for the fabrication of nanocrystalline SiC (nc-SiC) thin film. Thin sheet of nanocrystalline diamond was deposited on Si substrate by hot filamentassisted plasma-enhanced chemical vapour deposition system (HF-PECVD). Further, the resulting carbonbased sheet was heated at 1200 °C to allow a solid state reaction between C and Si substrate to form the SiC thin films. The synthesized films mainly consist of -SiC nanowires with diameters of about 50 nm and tens of micrometers long. The nanowires axes lie along the [1 1 1] direction and possess a high density of planar defects. The -SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of 400 nm, which is significantly shifted to the blue compared with the reported PL results of SiC materials. The blue shift may be ascribed to morphology, quantum size confinement effects of the nanomaterials and abundant structure defects that existed in the nanowires.

  16. Mechanical properties of silicon nanowire anodes at different states of charge

    OpenAIRE

    Moenig, Reiner

    2014-01-01

    Silicon is considered to be a promising anode material for lithium-ion batteries with very high energy densities. During lithiation, silicon anodes form different Li–Si phases and store up to 3.75 lithium ions per silicon atom. Associated with this high capacity is a volume change of roughly 300% and large mechanical stresses that may affect the electrochemical processes. The stresses that actually form strongly depend on the mechanical properties of the lithium silicides and the mechanical p...

  17. Growth and optical properties of CMOS-compatible silicon nanowires for photonic devices

    Science.gov (United States)

    Guichard, Alex Richard

    Silicon (Si) is the dominant semiconductor material in both the microelectronic and photovoltaic industries. Despite its poor optical properties, Si is simply too abundant and useful to be completely abandoned in either industry. Since the initial discovery of efficient room temperature photoluminescence (PL) from porous Si and the following discoveries of PL and time-resolved optical gain from Si nanocrystals (Si-nc) in SiO2, many groups have studied the feasibility of making Si-based, CMOS-compatible electroluminescent devices and electrically pumped lasers. These studies have shown that for Si-ne sizes below about 10 nm, PL can be attributed to radiative recombination of confined excitons and quantum efficiencies can reach 90%. PL peak energies are blue-shifted from the bulk Si band edge of 1.1 eV due to the quantum confinement effect and PL decay lifetimes are on mus timescales. However, many unanswered questions still exist about both the ease of carrier injection and various non-radiative and loss mechanisms that are present. A potential alternative material system to porous Si and Si-nc is Si nanowires (SiNWs). In this thesis, I examine the optical properties of SiNWs with diameters in the range of 3-30 nm fabricated by a number of compound metal oxide semiconductor (CMOS) compatible fabrication techniques including Chemical Vapor Deposition on metal nanoparticle coated substrates, catalytic wet etching of bulk Si and top-down electron-beam lithographic patterning. Using thermal oxidation and etching, we can increase the degree of confinement in the SiNWs. I demonstrate PL peaked in the visible and near-infrared (NIR) wavelength ranges that is tunable by controlling the crystalline SiNW core diameter, which is measured with dark field and high-resolution transmission electron microscopy. PL decay lifetimes of the SiNWs are on the order of 50 mus after proper surface passivation, which suggest that the PL is indeed from confined carriers in the SiNW cores

  18. Ordered silicon nanowire arrays prepared by an improved nanospheres self-assembly in combination with Ag-assisted wet chemical etching

    Science.gov (United States)

    Jia, Guobin; Westphalen, Jasper; Drexler, Jan; Plentz, Jonathan; Dellith, Jan; Dellith, Andrea; Andrä, Gudrun; Falk, Fritz

    2016-04-01

    An improved Langmuir-Blodgett self-assembly process combined with Ag-assisted wet chemical etching for the preparation of ordered silicon nanowire arrays is presented in this paper. The new process is independent of the surface conditions (hydrophilic or hydrophobic) of the substrate, allowing for depositing a monolayer of closely packed polystyrene nanospheres onto any flat surface. A full control of the morphology of the silicon nanowire is achieved. Furthermore, it is observed that the formation of porous-Si at the tips of the nanowires is closely related to the release of Ag nanoparticles from the Ag mask during the etching, which subsequently redeposit on the surface initially free of Ag, and these Ag nanoparticles catalyze the etching of the tips and lead to the porous-Si formation. This finding will help to improve the resulting nano- and microstructures to get them free of pores, and renders it a promising technology for low-cost high throughput fabrication of specific optical devices, photonic crystals, sensors, MEMS, and NEMS by substituting the costly BOSCH process. It is shown that ordered nanowire arrays free of porous structures can be produced if all sources of Ag nanoparticles are excluded, and structures with aspect ratio more than 100 can be produced.

  19. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    Science.gov (United States)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  20. A silicon nanowire-reduced graphene oxide composite as a high-performance lithium ion battery anode material.

    Science.gov (United States)

    Ren, Jian-Guo; Wang, Chundong; Wu, Qi-Hui; Liu, Xiang; Yang, Yang; He, Lifang; Zhang, Wenjun

    2014-03-21

    Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g(-1). Due to its [111] growth direction and the large contact area with rGO, the Si NWs in the composite show substantially enhanced reaction kinetics compared with other Si NWs or Si particles.

  1. Functionalization of silicon nanowire arrays by silver nanoparticles for the laser desorption ionization mass spectrometry analysis of vegetable oils.

    Science.gov (United States)

    Picca, Rosaria Anna; Calvano, Cosima Damiana; Lo Faro, Maria Josè; Fazio, Barbara; Trusso, Sebastiano; Ossi, Paolo Maria; Neri, Fortunato; D'Andrea, Cristiano; Irrera, Alessia; Cioffi, Nicola

    2016-09-01

    In this work, novel hybrid nanostructured surfaces, consisting of dense arrays of silicon nanowires (SiNWs) functionalized by Ag nanoparticles (AgNP/SiNWs), were used for the laser desorption/ionization time-of-flight mass spectrometry (LDI-TOF MS) analysis of some typical unsaturated food components (e.g. squalene, oleic acid) to assess their MS performance. The synthesis of the novel platforms is an easy, cost-effective process based on the maskless wet-etching preparation at room temperature of SiNWs followed by their decoration with AgNPs, produced by pulsed laser deposition. No particular surface pretreatment or addition of organic matrixes/ionizers was necessary. Moreover, oil extracts (e.g. extra virgin olive oil, peanut oil) could be investigated on AgNP/SiNWs surfaces, revealing their different MS profiles. It was shown that such substrates operate at reduced laser energy, typically generating intense silver cluster ions and analyte adducts. A comparison with bare SiNWs was also performed, indicating the importance of AgNP density on NW surface. In this case, desorption/ionization on silicon was invoked as probable LDI mechanism. Finally, the influence of SiNW length and surface composition on MS results was assessed. The combination of typical properties of SiNWs (hydrophobicity, antireflectivity) with ionization ability of metal NPs can be a valid methodology for the further development of nanostructured surfaces in LDI-TOF MS applications. Copyright © 2016 John Wiley & Sons, Ltd.

  2. Silicon nanowire-based ring-shaped tri-axial force sensor for smart integration on guidewire

    Science.gov (United States)

    Han, Beibei; Yoon, Yong-Jin; Hamidullah, Muhammad; Tsu-Hui Lin, Angel; Park, Woo-Tae

    2014-06-01

    A ring-shaped tri-axial force sensor with a 200 µm × 200 µm sensor area using silicon nanowires (SiNWs) as piezoresistive sensing elements is developed and characterized. The sensor comprises a suspended ring structure located at the center of four suspended beams that can be integrated on the distal tip of a guidewire by passing through the hollow core of the sensor. SiNWs with a length of 6 µm and a cross section of 90 nm × 90 nm are embedded at the anchor of each silicon bridge along direction as the piezoresistive sensing element. Finite element analysis has been used to determine the location of maximum stress and the simulation results are verified with the experimental measurements. Taking advantage of the high sensitivity of SiNWs, the fabricated ring-shaped sensor is capable of detecting small displacement in nanometer ranges with a sensitivity of 13.4 × 10-3 µm-1 in the z-direction. This tri-axial force sensor also shows high linearity (>99.9%) to the applied load and no obvious hysteresis is observed. The developed SiNW-based tri-axial force sensor provides new opportunities to implement sensing capability on medical instruments such as guidewires and robotic surgical grippers, where ultra-miniaturization and high sensitivity are essential.

  3. Surface chemistry and morphology of the solid electrolyte interphase on silicon nanowire lithium-ion battery anodes

    KAUST Repository

    Chan, Candace K.

    2009-04-01

    Silicon nanowires (SiNWs) have the potential to perform as anodes for lithium-ion batteries with a much higher energy density than graphite. However, there has been little work in understanding the surface chemistry of the solid electrolyte interphase (SEI) formed on silicon due to the reduction of the electrolyte. Given that a good, passivating SEI layer plays such a crucial role in graphite anodes, we have characterized the surface composition and morphology of the SEI formed on the SiNWs using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). We have found that the SEI is composed of reduction products similar to that found on graphite electrodes, with Li2CO3 as an important component. Combined with electrochemical impedance spectroscopy, the results were used to determine the optimal cycling parameters for good cycling. The role of the native SiO2 as well as the effect of the surface area of the SiNWs on reactivity with the electrolyte were also addressed. © 2009 Elsevier B.V. All rights reserved.

  4. 硅纳米线阵列的制备及光伏性能%Preparation and Photovoltaic Properties of Silicon Nanowire Arrays

    Institute of Scientific and Technical Information of China (English)

    蒋玉荣; 秦瑞平; 蔡方敏; 杨海刚; 马恒; 常方高

    2013-01-01

    在常温常压下,采用无电极金属催化化学腐蚀法在P型单晶硅片(100)基底上制备定向排列的硅纳米线阵列.研究了不同浓度硝酸银对纳米线阵列形貌、反射光谱性能的影响和具有电池雏形的硅纳米线阵列的光伏性能.结果表明:硝酸银浓度在0.02 mol/L时为最佳配比;与普通绒面电池相比,硅纳米线阵列太阳能电池的光电转换性能明显优于普通绒面电池.用光谱响应分析手段分析硅纳米线电池光伏性能的影响因素,并提出解决办法.%Large area aligned identical silicon nanowires array was prepared on mono-crystalline p-Si(100) wafers via the metal-assisted electroless etching at room temperature, 1.01 × 105Pa, The morphologies and reflection spectra of the samples prepared at different nitric acid silver concentrations were analyzed. In addition, the photovoltaic performance of solar cell silicon based on the nanowires array was investigated. The results show that the optimal concentration of nitric acid silver concentration is 0.02 mol/L. The photoelectric conversion property of solar cells based on the silicon nanowire arrays were better than that of the ordinary texturing solar cell. The photovoltaic performance of silicon nanowires array was also analyzed via the spectral response of different wavelengths.

  5. Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for high-performance advanced lithium-ion batteries

    OpenAIRE

    Liu, Bin; Wang, Xianfu; Chen, Haitian; Wang, Zhuoran; Chen, Di; Cheng, Yi-Bing; Zhou, Chongwu; Shen, Guozhen

    2013-01-01

    Toward the increasing demands of portable energy storage and electric vehicle applications, the widely used graphite anodes with significant drawbacks become more and more unsuitable. Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes fabricated via a facile method. Further, complete lithium-ion batteries based on Si and commercial LiCoO2 materials were assembled to investigate their corresponding across-the-aboard performances, demonstrating their enh...

  6. Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

    Directory of Open Access Journals (Sweden)

    D.-L. Kwong

    2012-01-01

    Full Text Available This paper reviews the progress of the vertical top-down nanowire technology platform developed to explore novel device architectures and integration schemes for green electronics and clean energy applications. Under electronics domain, besides having ultimate scaling potential, the vertical wire offers (1 CMOS circuits with much smaller foot print as compared to planar transistor at the same technology node, (2 a natural platform for tunneling FETs, and (3 a route to fabricate stacked nonvolatile memory cells. Under clean energy harvesting area, vertical wires could provide (1 cost reduction in photovoltaic energy conversion through enhanced light trapping and (2 a fully CMOS compatible thermoelectric engine converting waste-heat into electricity. In addition to progress review, we discuss the challenges and future prospects with vertical nanowires platform.

  7. Amperometric Bioelectronic Tongue for glucose determination

    Directory of Open Access Journals (Sweden)

    Yazan Al-Issa

    2015-03-01

    Full Text Available An amperometric Bioelectronic Tongue is reported for glucose determination that contains eight sensor electrodes constructed using different metal electrodes (Pt, Au, oxidoreductase enzymes (glucose oxidase, ascorbate oxidase, uricase, and membrane coatings (Nafion, chitosan. The response to varying concentrations of glucose, ascorbic acid, uric acid, and acetaminophen was tested for two models, concentration determination by current density measurements at individual electrodes and concentration determination by a linear regression model for the entire electrode array. The reduced chi-squared for the full array model was found to be about one order of magnitude lower than that for the individual-electrode model. Discrimination of glucose from chemical interference by the other three species is accomplished through a combination of enzyme catalysis, metal electrocatalysis, and membrane surface charge. The benefit of incorporating enzyme electrodes into the sensor array is illustrated by the lower correlation coefficients between different enzyme electrodes relative to non-enzyme coated electrodes. This approach can be more generally applied to detection of other substrates of oxidoreductase enzymes.

  8. First Principles Studies of Tapered Silicon Nanowires: Fundamental Insights and Practical Applications

    Science.gov (United States)

    Wu, Zhigang

    2008-03-01

    Nanowires (NWs) are often observed experimentally to be tapered rather than straight-edged, with diameters (d) shrinking by as much as 1 nm per 10 nm of vertical growth. Previous theoretical studies have examined the electronic properties of straight-edged nanowires (SNWs), although the effects of tapering on quantum confinement may be of both fundamental and practical importance. We have employed ab initio calculations to study the structural and electronic properties of tapered Si NWs. As one may expect, tapered nanowires (TNWs) possess axially-dependent electronic properties; their local energy gaps vary along the wire axis, with the largest gap occurring at the narrowest point of the wire. In contrast to SNWs, where confinement tends to shift valence bands more than conduction bands away from the bulk gap, the unoccupied states in TNWs are much more sensitive to d than the occupied states. In addition, tapering causes the band-edge states to be spatially separated along the wire axis, a consequence of the interplay between a strong variation in quantum confinement strength with diameter and the tapering-induced charge transfer. This property may be exploited in electronic and optical applications, for example, in photovoltaic devices where the separation of the valence and conduction band states could be used to transport excited charges during the thermalization process. In order to gain insight into TNW photovoltaic properties, we have also carried out calculations of the dipole matrix elements near the band edges as well as the role of metal contacts on TNW electronic properties. Finally, a combination of ab initio total energy calculations and classical molecular dynamics (MD) simulations are employed to suggest a new technique for bringing nanoscale objects together to form ordered, ultra high-aspect ratio nanowires. This work was supported in part by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  9. Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

    Science.gov (United States)

    Yu, Xiao; Verho, Jarmo; Li, Tie; Kallio, Pasi; Vilkko, Matti; Gao, Anran; Wang, Yuelin

    2014-01-01

    Summary Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is seen in the voltage–current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source. Studies have shown that leakage current is frequency dependent. Measurements of such frequency characteristics can provide valuable tools in validating the functionality of the used transistor. The measurements can also be an advantage in developing new detection technologies utilizing SiNW FETs. The frequency-domain responses can be measured by using a commercial sine-sweep-based network analyzer. However, because the analyzer takes a long time, it effectively prevents the development of most practical applications. Another problem with the method is that in order to produce sinusoids the signal generator has to cope with a large number of signal levels. This may become challenging in developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS) is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The methods is verified by experimental measurements from an n-type SiNW FET. PMID:25161832

  10. Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

    Directory of Open Access Journals (Sweden)

    Tomi Roinila

    2014-07-01

    Full Text Available Silicon nanowire-based field-effect transistors (SiNW FETs have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is seen in the voltage–current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source. Studies have shown that leakage current is frequency dependent. Measurements of such frequency characteristics can provide valuable tools in validating the functionality of the used transistor. The measurements can also be an advantage in developing new detection technologies utilizing SiNW FETs. The frequency-domain responses can be measured by using a commercial sine-sweep-based network analyzer. However, because the analyzer takes a long time, it effectively prevents the development of most practical applications. Another problem with the method is that in order to produce sinusoids the signal generator has to cope with a large number of signal levels. This may become challenging in developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The methods is verified by experimental measurements from an n-type SiNW FET.

  11. First principles simulation of amorphous silicon bulk, interfaces, and nanowires for photovoltaics

    OpenAIRE

    Belayneh, Merid Legesse

    2015-01-01

    Amorphous silicon has become the material of choice for many technologies, with major applications in large area electronics: displays, image sensing and thin film photovoltaic cells. This technology development has occurred because amorphous silicon is a thin film semiconductor that can be deposited on large, low cost substrates using low temperature. In this thesis, classical molecular dynamics and first principles DFT calculations have been performed to generate structural models of amorph...

  12. Nanoscience and the nano-bioelectronics frontier

    OpenAIRE

    Duan, Xiaojie; Lieber, Charles M.

    2015-01-01

    This review describes work presented in the 2014 inaugural Tsinghua University Press-Springer Nano Research Award lecture, as well as current and future opportunities for nanoscience research at the interface with brain science. First, we briefly summarize some of the considerations and the research journey that has led to our focus on bottom-up nanoscale science and technology. Second, we recapitulate the motivation for and our seminal contributions to nanowire-based nanoscience and technolo...

  13. Electroless selective deposition of gold nano-array for silicon nanowires growth

    Directory of Open Access Journals (Sweden)

    Ruiz-Gomes E.

    2014-01-01

    Full Text Available Nanopatterns of gold clusters on a large surface of oriented Si(111 substrates, from the galvanic displacement of gold salt (via the spontaneous reduction of AuCl4 -, are demonstrated in this work. The Si substrate is patterned by Focused Ion Beam (FIB prior to being dipped in a gold solution. Here, we show that these patterns lead to successful control of the position and size of gold clusters. Sequential patterning reveals a powerful maskless alternative to surface preparation prior to Si nanowire growth

  14. High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

    KAUST Repository

    Huang, Ruo-Gu

    2011-06-24

    We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

  15. Silicon nanowire-based ring-shaped tri-axial force sensor for smart integration on guidewire

    International Nuclear Information System (INIS)

    A ring-shaped tri-axial force sensor with a 200 µm × 200 µm sensor area using silicon nanowires (SiNWs) as piezoresistive sensing elements is developed and characterized. The sensor comprises a suspended ring structure located at the center of four suspended beams that can be integrated on the distal tip of a guidewire by passing through the hollow core of the sensor. SiNWs with a length of 6 µm and a cross section of 90 nm × 90 nm are embedded at the anchor of each silicon bridge along 〈1 1 0〉 direction as the piezoresistive sensing element. Finite element analysis has been used to determine the location of maximum stress and the simulation results are verified with the experimental measurements. Taking advantage of the high sensitivity of SiNWs, the fabricated ring-shaped sensor is capable of detecting small displacement in nanometer ranges with a sensitivity of 13.4 × 10−3 µm−1 in the z-direction. This tri-axial force sensor also shows high linearity (>99.9%) to the applied load and no obvious hysteresis is observed. The developed SiNW-based tri-axial force sensor provides new opportunities to implement sensing capability on medical instruments such as guidewires and robotic surgical grippers, where ultra-miniaturization and high sensitivity are essential. (paper)

  16. Life cycle environmental impact of high-capacity lithium ion battery with silicon nanowires anode for electric vehicles.

    Science.gov (United States)

    Li, Bingbing; Gao, Xianfeng; Li, Jianyang; Yuan, Chris

    2014-01-01

    Although silicon nanowires (SiNW) have been widely studied as an ideal material for developing high-capacity lithium ion batteries (LIBs) for electric vehicles (EVs), little is known about the environmental impacts of such a new EV battery pack during its whole life cycle. This paper reports a life cycle assessment (LCA) of a high-capacity LIB pack using SiNW prepared via metal-assisted chemical etching as anode material. The LCA study is conducted based on the average U.S. driving and electricity supply conditions. Nanowastes and nanoparticle emissions from the SiNW synthesis are also characterized and reported. The LCA results show that over 50% of most characterized impacts are generated from the battery operations, while the battery anode with SiNW material contributes to around 15% of global warming potential and 10% of human toxicity potential. Overall the life cycle impacts of this new battery pack are moderately higher than those of conventional LIBs but could be actually comparable when considering the uncertainties and scale-up potential of the technology. These results are encouraging because they not only provide a solid base for sustainable development of next generation LIBs but also confirm that appropriate nanomanufacturing technologies could be used in sustainable product development.

  17. Formation of Silicon/Carbon Core-Shell Nanowires Using Carbon Nitride Nanorods Template and Gold Catalyst

    Directory of Open Access Journals (Sweden)

    Ilyani Putri Jamal

    2013-01-01

    Full Text Available In this experiment, silicon/carbon (Si/C core-shell nanowires (NWs were synthesized using gold nanoparticles (Au NPs coated carbon nitride nanorods (CN NRs as a template. To begin with, the Au NPs coated CN NRs were prepared by using plasma-enhanced chemical vapor deposition assisted with hot-wire evaporation technique. Fourier transform infrared spectrum confirms the C–N bonding of the CN NRs, while X-ray diffraction pattern indicates the crystalline structure of the Au NPs and amorphous structure of the CN NRs. The Au NPs coated CN NRs were thermally annealed at temperature of 800°C in nitrogen ambient for one hour to induce the growth of Si/C core-shell NWs. The growth mechanism for the Si/C core-shell NWs is related to the nitrogen evolution and solid-liquid-solid growth process which is a result of the thermal annealing. The formation of Si/C core-shell NWs is confirmed by electron spectroscopic imaging analysis.

  18. Molecular layer deposition of APTES on silicon nanowire biosensors: Surface characterization, stability and pH response

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yuchen [Department of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Huang, Jie [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Zang, Pengyuan [Department of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Kim, Jiyoung [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Hu, Walter, E-mail: walter.hu@utdallas.edu [Department of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States)

    2014-12-15

    Graphical abstract: - Abstract: We report the use of molecular layer deposition (MLD) for depositing 3-aminopropyltriethoxysilane (APTES) on a silicon dioxide surface. The APTES monolayer was characterized using spectroscopic ellipsometry, contact angle goniometry, and atomic force microscopy. Effects of reaction time of repeating pulses and simultaneous feeding of water vapor with APTES were tested. The results indicate that the synergistic effects of water vapor and reaction time are significant for the formation of a stable monolayer. Additionally, increasing the number of repeating pulses improved the APTES surface coverage but led to saturation after 10 pulses. In comparing MLD with solution-phase deposition, the APTES surface coverage and the surface quality were nearly equivalent. The hydrolytic stability of the resulting films was also studied. The results confirmed that the hydrolysis process was necessary for MLD to obtain stable surface chemistry. Furthermore, we compared the pH sensing results of Si nanowire field effect transistors (Si NWFETs) modified by both the MLD and solution methods. The highly repeatable pH sensing results reflected the stability of APTES monolayers. The results also showed an improved pH response of the sensor prepared by MLD compared to the one prepared by the solution treatment, which indicated higher surface coverage of APTES.

  19. Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

    Science.gov (United States)

    Fang, Jingtian; Vandenberghe, William G.; Fu, Bo; Fischetti, Massimo V.

    2016-01-01

    We present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band structure, enabling a detailed study of the characteristics of devices with a nanometer-scale channel and body. Assuming externally applied potentials that change slowly along the electron-transport direction, we invoke the envelope-wavefunction approximation to apply the open boundary conditions and to develop the transport equations. We construct the full-band open boundary conditions (self-energies of device contacts) from the complex band structure of the contacts. We solve the transport equations and present the expressions required to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ˜66 mV/decade and a drain-induced barrier-lowering of ˜2.5 mV/V. Our theoretical calculations predict that low-dimensionality channels in a 3D GAA architecture are able to meet the performance requirements of future devices in terms of SS swing and electrostatic control.

  20. Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Jingtian, E-mail: jingtian.fang@utdallas.edu; Vandenberghe, William G.; Fu, Bo; Fischetti, Massimo V. [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2016-01-21

    We present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band structure, enabling a detailed study of the characteristics of devices with a nanometer-scale channel and body. Assuming externally applied potentials that change slowly along the electron-transport direction, we invoke the envelope-wavefunction approximation to apply the open boundary conditions and to develop the transport equations. We construct the full-band open boundary conditions (self-energies of device contacts) from the complex band structure of the contacts. We solve the transport equations and present the expressions required to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ∼66 mV/decade and a drain-induced barrier-lowering of ∼2.5 mV/V. Our theoretical calculations predict that low-dimensionality channels in a 3D GAA architecture are able to meet the performance requirements of future devices in terms of SS swing and electrostatic control.

  1. Magnetic-composite-modified polycrystalline silicon nanowire field-effect transistor for vascular endothelial growth factor detection and cancer diagnosis.

    Science.gov (United States)

    Chen, Hsiao-Chien; Qiu, Jian-Tai; Yang, Fu-Liang; Liu, Yin-Chih; Chen, Min-Cheng; Tsai, Rung-Ywan; Yang, Hung-Wei; Lin, Chia-Yi; Lin, Chu-Chi; Wu, Tzong-Shoon; Tu, Yi-Ming; Xiao, Min-Cong; Ho, Chia-Hua; Huang, Chien-Chao; Lai, Chao-Sung; Hua, Mu-Yi

    2014-10-01

    This study proposes a vascular endothelial growth factor (VEGF) biosensor for diagnosing various stages of cervical carcinoma. In addition, VEGF concentrations at various stages of cancer therapy are determined and compared to data obtained by computed tomography (CT) and cancer antigen 125 (CA-125). The increase in VEGF concentrations during operations offers useful insight into dosage timing during cancer therapy. This biosensor uses Avastin as the biorecognition element for the potential cancer biomarker VEGF and is based on a n-type polycrystalline silicon nanowire field-effect transistor (poly-SiNW-FET). Magnetic nanoparticles with poly[aniline-co-N-(1-one-butyric acid) aniline]-Fe3O4 (SPAnH-Fe3O4) shell-core structures are used as carriers for Avastin loading and provide rapid purification due to their magnetic properties, which prevent the loss of bioactivity; furthermore, the high surface area of these structures increases the quantity of Avastin immobilized. Average concentrations in human blood for species that interfere with detection specificity are also evaluated. The detection range of the biosensor for serum samples covers the results expected from both healthy individuals and cancer patients.

  2. Silicon nanowire arrays coated with electroless Ag for increased surface-enhanced Raman scattering

    Science.gov (United States)

    Bai, Fan; Li, Meicheng; Fu, Pengfei; Li, Ruike; Gu, Tiansheng; Huang, Rui; Chen, Zhao; Jiang, Bing; Li, Yingfeng

    2015-05-01

    The ordered Ag nanorod (AgNR) arrays are fabricated through a simple electroless deposition technique using the isolated Si nanowire (SiNW) arrays as the Ag-grown scaffold. The AgNR arrays have the single-crystallized structure and the plasmonic crystal feature. It is found that the formation of the AgNR arrays is strongly dependent on the filling ratio of SiNWs. A mechanism is proposed based on the selective nucleation and the synergistic growth of Ag nanoparticles on the top of the SiNWs. Moreover, the special AgNR arrays grown on the substrate of SiNWs exhibit a detection sensitivity of 10-15M for rhodamine 6G molecules, which have the potential application to the highly sensitive surface-enhanced Raman scattering sensors.

  3. Limiting efficiency calculation of silicon single-nanowire solar cells with considering Auger recombination

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, Xiongfei; Wu, Shaolong; Shang, Aixue; Li, Xiaofeng, E-mail: xfli@suda.edu.cn [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006 (China)

    2015-02-09

    Single-nanowire solar cells (SNSCs) have attracted considerable attention due to their unique light-harvesting capability mediated by the optical antenna effect and the high photoconversion efficiency due to the orthogonalization of the carrier collection to the photon incidence. We present a detailed prediction of the light-conversion efficiency of Si SNSCs based on finite-element simulation and thermodynamic balance analysis, with especially focusing on the comparison between SNSCs and film systems. Carrier losses due to radiative and Auger recombinations are introduced in the analysis of the limiting efficiency, which show that the Auger recombination plays a key role in accurately predicting the efficiency of Si SNSCs, otherwise, the device performance would be strongly overestimated. The study paves a more realistic way to evaluate the nanostructured solar cells based on indirect-band photoactive materials.

  4. The influence of substrate orientation on the density of silicon nanowires grown on multicrystalline and single crystal substrates by electron cyclotron resonance chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ball, J., E-mail: balljb@lsbu.ac.uk; Reehal, H.S.

    2012-01-31

    The Au catalysed, vapour-liquid-solid growth of Si nanowires on Si substrates of different orientations has been studied using electron cyclotron resonance plasma-assisted chemical vapour deposition (ECRCVD). ECRCVD plasma excitation is found to strongly promote wire growth rate and density with wire diameters in excess of 200 nm under the conditions used. Substrate orientation and nanowire density are strongly correlated. This has been studied using multicrystalline as well as single crystal Si substrates. It is suggested that the Gibbs-Thomson effect can account for the behaviour of wire density with orientation. The application of an RF generated, DC self-bias of - 5 V on the substrate during growth strongly enhances wire density without affecting growth rate or diameter. A tentative model for wire growth has been proposed which is based on an initial incubation/crystallisation step, followed by silicon incorporation at the vapour-liquid interface being rate-limiting.

  5. Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

    Science.gov (United States)

    Maruthupandy, Muthusamy; Anand, Muthusamy; Maduraiveeran, Govindhan; Sait Hameedha Beevi, Akbar; Jeeva Priya, Radhakrishnan

    2015-12-01

    The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices.

  6. Optical performance monitoring at 640Gb/s via slow-light in a silicon nanowire

    CERN Document Server

    Corcoran, B; Pelusi, M; Grillet, C; White, T P; Faolain, L O; Krauss, T F; Eggleton, B J; Moss, David J

    2015-01-01

    We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 micron) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640 Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.

  7. Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure

    International Nuclear Information System (INIS)

    Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

  8. Sensitivity analysis of silicon nanowire chemical sensor based on its geometry and the operating temperature

    Science.gov (United States)

    Jayachandran Nair, Deepthi

    Silicon Nano Wires (SiNW) have been used in recent times as major building block in various nano devices like sensors, FETs etc. SiNW devices have also manifested many advantages over nano tube (NT) devices such as their fabrication in today's silicon world. Chemical sensor based on SiNW changes its conductivity when the target molecules are captured by the receptors spread across the nano wire (NW). Chemical sensitivity, which is defined as the change in conductance, is analyzed analytically to see how it is affected by different parameters. The sensitivity of the sensor based on the length of the SiNW is verified from previous works and the temperature which has not been considered before as an important parameter in the sensor performance are taken into account to see how it affects the sensitivity of the sensor.

  9. 双氧水浓度对硅纳米线生长的影响%Effects of Hydrogen Peroxide Concentration on the Growth of Silicon Nanowires

    Institute of Scientific and Technical Information of China (English)

    林星星; 沈文忠

    2012-01-01

    The influence of hydrogen peroxide concentration on the morphology, growth rate and photoluminescence of silicon nanowires in a two-step metal assisted chemical etching method is studied. It is shown that the growth rate increases with the increased concentration. The photoluminescence spectra exhibit broad visible emission centered around 685 nm originating from porous silicon structures. Formation of the porous structure is attributed to the renucleation of Ag nanoparticles on the sidewalls of silicon nanowires through diffusion process.%利用两步法金属辅助化学刻蚀(MACE)法制备硅纳米线(SiNWs)样品。研究了双氧水(H2O2)浓度对SiNWs样品形貌、生长速率以及发光特性的影响。发现随着H2O2浓度的增加,SiNWs样品生长速率随之提高,同时出现了位于685nm附近较宽的来源于多孔硅结构的光致发光峰。实验结果表明,多孔硅结构的形成与银离子(Ag+)通过扩散作用在SiNWs样品侧壁重新沉积有关。

  10. Thin Film Silicon Nanowire/PEDOT:PSS Hybrid Solar Cells with Surface Treatment.

    Science.gov (United States)

    Wang, Hao; Wang, Jianxiong; Hong, Lei; Tan, Yew Heng; Tan, Chuan Seng; Rusli

    2016-12-01

    SiNW/PEDOT:PSS hybrid solar cells are fabricated on 10.6-μm-thick crystalline Si thin films. Cells with Si nanowires (SiNWs) of different lengths fabricated using the metal-catalyzed electroless etching (MCEE) technique have been investigated. A surface treatment process using oxygen plasma has been applied to improve the surface quality of the SiNWs, and the optimized cell with 0.7-μm-long SiNWs achieved a power conversion efficiency (PCE) of 7.83 %. The surface treatment process is found to remove surface defects and passivate the SiNWs and substantially improve the average open circuit voltage from 0.461 to 0.562 V for the optimized cell. The light harvesting capability of the SiNWs has also been investigated theoretically using optical simulation. It is found that the inherent randomness of the MCEE SiNWs, in terms of their diameter and spacing, accounts for the excellent light harvesting capability. In comparison, periodic SiNWs of comparable dimensions have been shown to exhibit much poorer trapping and absorption of light. PMID:27356558

  11. Silicon nanowires: electron holography studies of doped p–n junctions and biased Schottky barriers

    International Nuclear Information System (INIS)

    We report an in situ examination of individual Si p–n junction nanowires (NWs) using off-axis electron holography (EH) during transmission electron microscopy. The SiNWs were synthesized by chemical vapor deposition with an axial dopant profile from n- to p-type, and then placed inside the transmission electron microscope as a cantilever geometry in contact with a movable Pt probe for in situ biasing measurements during simultaneous EH observations. The phase shift from EH indicates the potential shift between the p- and n-segments to be 1.03 ± 0.17 V due to the built-in voltage. The I–V characteristics of a single SiNW indicate the formation of a Schottky barrier between the NW tip and the movable Pt contact. EH observations show a strong concentration of electric field at this contact, preventing a change in the Si energy bands in the p–n junction region due to the applied bias. (paper)

  12. High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability

    OpenAIRE

    Andreas Krause; Susanne Dörfler; Markus Piwko; Florian M. Wisser; Tony Jaumann; Eike Ahrens; Lars Giebeler; Holger Althues; Stefan Schädlich; Julia Grothe; Andrea Jeffery; Matthias Grube; Jan Brückner; Jan Martin; Jürgen Eckert

    2016-01-01

    We show full Li/S cells with the use of balanced and high capacity electrodes to address high power electro-mobile applications. The anode is made of an assembly comprising of silicon nanowires as active material densely and conformally grown on a 3D carbon mesh as a light-weight current collector, offering extremely high areal capacity for reversible Li storage of up to 9 mAh/cm2. The dense growth is guaranteed by a versatile Au precursor developed for homogenous Au layer deposition on 3D su...

  13. Ultra-high-speed optical serial-to-parallel data conversion by time-domain optical Fourier transformation in a silicon nanowire

    OpenAIRE

    Mulvad, Hans Christian Hansen; Palushani, Evarist; Hu, Hao; Ji, Hua; Lillieholm, Mads; Galili, Michael; Clausen, Anders; Pu, Minhao; Yvind, Kresten; Hvam, Jørn Märcher; Jeppesen, Palle; Oxenløwe, Leif Katsuo

    2011-01-01

    We demonstrate conversion from 64 × 10 Gbit/s optical timedivision multiplexed (OTDM) data to dense wavelength division multiplexed (DWDM) data with 25 GHz spacing. The conversion is achieved by time-domain optical Fourier transformation (OFT) based on four-wave mixing (FWM) in a 3.6 mm long silicon nanowire. A total of 40 out of 64 tributaries of a 64 × 10 Gbit/s OTDM-DPSK data signal are simultaneously converted with a bit-error rate (BER) performance below the 2 × 10−3 FEC limit. Using a 5...

  14. Polysilicon Nanowires for chemical sensing applications

    OpenAIRE

    Jacques, Emmanuel; Ni, Liang; Salaun, Anne-Claire; Rogel, Régis; Pichon, Laurent

    2012-01-01

    Polycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location on the substrate. Grounded and suspended polycrystalline silicon nanowires with a curvature radius a...

  15. Stress effects on the initial lithiation of crystalline silicon nanowires: reactive molecular dynamics simulations using ReaxFF.

    Science.gov (United States)

    Ostadhossein, Alireza; Cubuk, Ekin D; Tritsaris, Georgios A; Kaxiras, Efthimios; Zhang, Sulin; van Duin, Adri C T

    2015-02-01

    Silicon (Si) has been recognized as a promising anode material for the next-generation high-capacity lithium (Li)-ion batteries because of its high theoretical energy density. Recent in situ transmission electron microscopy (TEM) revealed that the electrochemical lithiation of crystalline Si nanowires (c-SiNWs) proceeds by the migration of the interface between the lithiated Si (LixSi) shell and the pristine unlithiated core, accompanied by solid-state amorphization. The underlying atomic mechanisms of Li insertion into c-Si remain poorly understood. Herein, we perform molecular dynamics (MD) simulations using the reactive force field (ReaxFF) to characterize the lithiation process of c-SiNWs. Our calculations show that ReaxFF can accurately reproduce the energy barriers of Li migration from DFT calculations in both crystalline (c-Si) and amorphous Si (a-Si). The ReaxFF-based MD simulations reveal that Li insertion into interlayer spacing between two adjacent (111) planes results in the peeling-off of the (111) facets and subsequent amorphization, in agreement with experimental observations. We find that breaking of the Si-Si bonds between (111)-bilayers requires a rather high local Li concentration, which explains the atomically sharp amorphous-crystalline interface (ACI). Our stress analysis shows that lithiation induces compressive stress at the ACI layer, causing retardation or even the stagnation of the reaction front, also in good agreement with TEM observations. Lithiation at high temperatures (e.g. 1200 K) shows that Li insertion into c-SiNW results in an amorphous to crystalline phase transformation at Li : Si composition of ∼4.2 : 1. Our modeling results provide a comprehensive picture of the effects of reaction and diffusion-induced stress on the interfacial dynamics and mechanical degradation of SiNW anodes under chemo-mechanical lithiation. PMID:25559797

  16. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, Amretashis; Sarkar, Chandan Kumar [Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700 032 (India); Requejo, Felix G, E-mail: amretashis@gmail.com [INIFTA, Departmento de Quimica and Departmento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC/67-1900, La Plata (Argentina)

    2011-10-12

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO{sub 2}-SiO{sub 2} stack (stack-1) and the other with La{sub 2}O{sub 3}-SiO{sub 2} stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  17. Facile fabrication of a silicon nanowire sensor by two size reduction steps for detection of alpha-fetoprotein biomarker of liver cancer

    Science.gov (United States)

    Binh Pham, Van; ThanhTung Pham, Xuan; Nhat Khoa Phan, Thanh; Thanh Tuyen Le, Thi; Chien Dang, Mau

    2015-12-01

    We present a facile technique that only uses conventional micro-techniques and two size-reduction steps to fabricate wafer-scale silicon nanowire (SiNW) with widths of 200 nm. Initially, conventional lithography was used to pattern SiNW with 2 μm width. Then the nanowire width was decreased to 200 nm by two size-reduction steps with isotropic wet etching. The fabricated SiNW was further investigated when used with nanowire field-effect sensors. The electrical characteristics of the fabricated SiNW devices were characterized and pH sensitivity was investigated. Then a simple and effective surface modification process was carried out to modify SiNW for subsequent binding of a desired receptor. The complete SiNW-based biosensor was then used to detect alpha-fetoprotein (AFP), one of the medically approved biomarkers for liver cancer diagnosis. Electrical measurements showed that the developed SiNW biosensor could detect AFP with concentrations of about 100 ng mL-1. This concentration is lower than the necessary AFP concentration for liver cancer diagnosis.

  18. Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 陆梅; 王成伟; 力虎林

    2002-01-01

    The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler- Nordheim tunneling mechanism and current-voltage (I -V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.

  19. Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for high-performance advanced lithium-ion batteries

    Science.gov (United States)

    Liu, Bin; Wang, Xianfu; Chen, Haitian; Wang, Zhuoran; Chen, Di; Cheng, Yi-Bing; Zhou, Chongwu; Shen, Guozhen

    2013-04-01

    Toward the increasing demands of portable energy storage and electric vehicle applications, the widely used graphite anodes with significant drawbacks become more and more unsuitable. Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes fabricated via a facile method. Further, complete lithium-ion batteries based on Si and commercial LiCoO2 materials were assembled to investigate their corresponding across-the-aboard performances, demonstrating their enhanced specific capacity (2950 mAh g-1 at 0.2 C), good repeatability/rate capability (even >900 mAh g-1 at high rate of 5 C), long cycling life, and excellent stability in various external conditions (curvature, temperature, and humidity). Above results light the way to principally replacing graphite anodes with silicon-based electrodes which was confirmed to have better comprehensive performances.

  20. Direct-to-indirect bandgap transitions in ⟨ 110 ⟩ silicon nanowires

    Science.gov (United States)

    Jensen, I. J. T.; Ulyashin, A. G.; Løvvik, O. M.

    2016-01-01

    The bandstructure of ⟨ 110 ⟩ silicon nano wires (SiNWs) with diameters (d) up to 6.1 nm were studied using density functional theory. Three types of surface termination were investigated: H, F, and OH; all giving quantum confinement induced direct bandgaps in the investigated size range. Comparison of the calculated results to reported experimental values showed that trends in the bandstructure behaviour were well reproduced. By studying the relative decrease of global and local minima in the conduction band minimum with increasing d, it was possible to predict a direct-to-indirect bandgap transition at d = 9.2, 9.5, and 11.4 nm for H, F, and OH terminated NWs, respectively.

  1. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    Science.gov (United States)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  2. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    Science.gov (United States)

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors.

  3. Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

    Directory of Open Access Journals (Sweden)

    Arash Dehzangi

    2011-01-01

    Full Text Available Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronics in order to decrease the energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by Atomic Force Microscopy (AFM and wet etching on p-type Silicon On Insulator (SOI wafer. Then, we checked the characteristic and conductance trend in this device regarding to semi-classical approach by Semiconductor Probe Analyser (SPA. Results: We observed in characteristic of the device directly proportionality of the negative gate voltage and Source-Drain current. In semi classical approach, negative Gate voltage decreased the energy States of the Nano-wire between the source and the drain. The graph for positive gate voltage plotted as well to check. In other hand, the conductance will be following characteristic due to varying the gate voltage under the different drain-source voltage. Conclusion: The channel energy states are supposed to locate between two electrochemical potentials of the contacts in order to transform the charge. For the p-type channel the transform of the carriers is located in valence band and changing the positive or negative gate voltage, making the valence band energy states out of or in the area between the electrochemical potentials of the contacts causing the current reduced or increased.

  4. Two-Copy Wavelength Conversion of an 80 Gbit/s Serial Data Signal Using Cross-Phase Modulation in a Silicon Nanowire and Detailed Pump-Probe Characterisation

    DEFF Research Database (Denmark)

    Ji, Hua; Cleary, C. S.; Dailey, J. M.;

    2012-01-01

    We experimentally demonstrate 80 Gbit/s wavelength conversion to two copies by simultaneously extracting the blue- and red-shifted sidebands from XPM in a silicon nanowire. Bit error rates of 10-9 with only ~2 dB power penalty is achieved for both sidebands. Detailed pump-probe characterisation r...

  5. 硅纳米线阵列的制备及其光电应用%Preparation and Optoelectronic Applications of Silicon Nanowire Arrays

    Institute of Scientific and Technical Information of China (English)

    刘莉; 曹阳; 贺军辉; 杨巧文

    2013-01-01

    Recent years, silicon nanowire arrays have aroused extensive attention among scientists and engineers due to their unique characteristics such as excellent antireflection in both wide wavelength range and wide incidence angle and their great potentials in the field of optoelectronics. This paper reviews the latest research progress in preparation of silicon nanowire arrays and their optoelectronic applications. The preparation methods that have been verified are classified mainly into two categories, i. e. , " bottom-up " and" top-down", including template-assisted chemical vapor deposition, chemical vapor deposition combined with Langmuir-Blodgett technology and metal-catalyzed chemical etching. The third method is at the present time the most frequently used as well as the simplest one, and is discussed in detail in respect of the etching steps, mechanism and controlling parameters. As for the optoelectronic applications of silicon nanowire arrays, this review mainly describes those in photodetectors, conventional solar cells, photoelectrochemical solar cells, photocatalytic water splitting, and photocatalytic degradation of organic pollutants. Finally, an outlook is made about how to improve the photoelectrical conversion efficiency and avoid the corrosion of silicon nanowire arrays, which indicates that surface modification and resulting properties may be a future research direction for silicon nanowire arrays research.%近年来,硅纳米线阵列在宽波段、宽入射角范围内优异的减反射性能及其在光电领域的巨大应用前景引起了相关研究者的广泛关注.本文综述了国内外硅纳米线阵列的制备及其在光电应用方面的最新研究进展.关于硅纳米线阵列的制备方法,主要从“自下而上”和“自上而下”两大类出发,分别阐述了模板辅助的化学气相沉积法、化学气相沉积结合Langmuir-Blodgett技术法和金属催化化学刻蚀法,其中重点介绍了目前使用最为

  6. Controlled growth of single nanowires within a supported alumina template

    Energy Technology Data Exchange (ETDEWEB)

    Vlad, A [Unite de Dispositifs Integres et Circuits Electroniques, Universite Catholique de Louvain (UCL), Place de Levant, 3, B-1348 Louvain-la-Neuve (Belgium); Matefi-Tempfli, M [Unite de Physico-Chimie et de Physique des Materiaux, UCL, Place Croix du Sud, 1, B-1348 Louvain-la-Neuve (Belgium); Faniel, S [Unite de Dispositifs Integres et Circuits Electroniques, Universite Catholique de Louvain (UCL), Place de Levant, 3, B-1348 Louvain-la-Neuve (Belgium); Bayot, V [Unite de Dispositifs Integres et Circuits Electroniques, Universite Catholique de Louvain (UCL), Place de Levant, 3, B-1348 Louvain-la-Neuve (Belgium); Melinte, S [Unite de Dispositifs Integres et Circuits Electroniques, Universite Catholique de Louvain (UCL), Place de Levant, 3, B-1348 Louvain-la-Neuve (Belgium); Piraux, L [Unite de Physico-Chimie et de Physique des Materiaux, UCL, Place Croix du Sud, 1, B-1348 Louvain-la-Neuve (Belgium); Matefi-Tempfli, S [Unite de Physico-Chimie et de Physique des Materiaux, UCL, Place Croix du Sud, 1, B-1348 Louvain-la-Neuve (Belgium)

    2006-10-14

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire patterns as well as arrays of single nanowires with a precise position and spacing.

  7. Controlled growth of single nanowires within a supported alumina template

    Science.gov (United States)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.; Bayot, V.; Melinte, S.; Piraux, L.; Mátéfi-Tempfli, S.

    2006-10-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire patterns as well as arrays of single nanowires with a precise position and spacing.

  8. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...... consisting of a single, vertical, gallium arsenide(GaAs) nanowire grown on silicon with a radial p-i-n-junction. The average concentration was ~8, and the peak concentration was ~12. By increasing the number of junctions in solar cells, they can extract more energy per absorbed photon. In ideal multi......Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...

  9. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

    Science.gov (United States)

    Zhao, S; Djavid, M; Mi, Z

    2015-10-14

    To date, it has remained challenging to realize electrically injected light sources in the vacuum ultraviolet wavelength range (∼200 nm or shorter), which are important for a broad range of applications, including sensing, surface treatment, and photochemical analysis. In this Letter, we have demonstrated such a light source with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate. Detailed angle dependent electroluminescence studies suggest that, albeit the light is TM polarized, the dominant light emission direction is from the nanowire top surface, that is, along the c axis, due to the strong light scattering effect. Such an efficient surface emitting device was not previously possible using conventional c-plane AlN planar structures. The AlN nanowire LEDs exhibit an extremely large electrical efficiency (>85%), which is nearly ten times higher than the previously reported AlN planar devices. Our detailed studies further suggest that the performance of AlN nanowire LEDs is predominantly limited by electron overflow. This study provides important insight on the fundamental emission characteristics of AlN nanowire LEDs and also offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection. PMID:26375576

  10. Advances in the Application of Silicon and Germanium Nanowires for High-Performance Lithium-Ion Batteries.

    Science.gov (United States)

    Kennedy, Tadhg; Brandon, Michael; Ryan, Kevin M

    2016-07-01

    Li-alloying materials such as Si and Ge nanowires have emerged as the forerunners to replace the current, relatively low-capacity carbonaceous based Li-ion anodes. Since the initial report of binder-free nanowire electrodes, a vast body of research has been carried out in which the performance and cycle life has significantly progressed. The study of such electrodes has provided invaluable insights into the cycling behavior of Si and Ge, as the effects of repeated lithiation/delithiation on the material can be observed without interference from conductive additives or binders. Here, some of the key developments in this area are looked at, focusing on the problems encountered by Li-alloying electrodes in general (e.g., pulverization, loss of contact with current collector etc.) and how the study of nanowire electrodes has overcome these issues. Some key nanowire studies that have elucidated the consequences of the alloying/dealloying process on the morphology of Si and Ge are also considered, in particular looking at the impact that effects such as pore formation and lithium-assisted welding have on performance. Finally, the challenges for the practical implementation of nanowire anodes within the context of the current understanding of such systems are discussed. PMID:26855084

  11. Inquisition of Microcystis aeruginosa and Synechocystis nanowires: characterization and modelling.

    Science.gov (United States)

    Sure, Sandeep; Torriero, Angel A J; Gaur, Aditya; Li, Lu Hua; Chen, Ying; Tripathi, Chandrakant; Adholeya, Alok; Ackland, M Leigh; Kochar, Mandira

    2015-11-01

    Identification of extracellular conductive pilus-like structures (PLS) i.e. microbial nanowires has spurred great interest among scientists due to their potential applications in the fields of biogeochemistry, bioelectronics, bioremediation etc. Using conductive atomic force microscopy, we identified microbial nanowires in Microcystis aeruginosa PCC 7806 which is an aerobic, photosynthetic microorganism. We also confirmed the earlier finding that Synechocystis sp. PCC 6803 produces microbial nanowires. In contrast to the use of highly instrumented continuous flow reactors for Synechocystis reported earlier, we identified simple and optimum culture conditions which allow increased production of nanowires in both test cyanobacteria. Production of these nanowires in Synechocystis and Microcystis were found to be sensitive to the availability of carbon source and light intensity. These structures seem to be proteinaceous in nature and their diameter was found to be 4.5-7 and 8.5-11 nm in Synechocystis and M. aeruginosa, respectively. Characterization of Synechocystis nanowires by transmission electron microscopy and biochemical techniques confirmed that they are type IV pili (TFP) while nanowires in M. aeruginosa were found to be similar to an unnamed protein (GenBank : CAO90693.1). Modelling studies of the Synechocystis TFP subunit i.e. PilA1 indicated that strategically placed aromatic amino acids may be involved in electron transfer through these nanowires. This study identifies PLS from Microcystis which can act as nanowires and supports the earlier hypothesis that microbial nanowires are widespread in nature and play diverse roles. PMID:26319534

  12. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

    KAUST Repository

    Najar, Adel

    2012-01-01

    We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

  13. Melanin: spin behaviour and implications for bioelectronic devices (Presentation Recording)

    Science.gov (United States)

    Meredith, Paul; Sheliakina, Margarita; Mostert, Bernard

    2015-10-01

    The melanins are a broad class of pigmentary macromolecules found through nature that perform a wide range of functions including photo-protection [1]. The most common melanin - the brown, black pigment eumelanin, has been much studied because of its role in melanoma and also for its functional material properties [2]. Synthetic eumelanin has been shown to be photoconductive in the solid state and also possess a water content dependent dark conductivity [3]. It is now well established that these electrical properties arise from hybrid ionic-electronic behaviour, leading to the proposition that melanins could be model biocompatible systems for ion-to-electron transduction in bioelectronics. In my talk, I will discuss the basic science behind these bioelectronics properties - electrical and optical. In this context I will also describe recent electron paramagnetic spin studies which isolate the role of the various chemical moieties responsible for the hybrid ionic-electronic behaviour. I will also highlight preliminary results on prototype melanin-based bioelectronics devices and discuss possible architectures to realise elements such as solid-state switches and transducers. [1] "The physical and chemical properties of eumelanin", P. Meredith and T. Sarna, Pigment Cell Research, 19(6), pp572-594 (2006). [2] "Electronic and optoelectronic materials and devices inspired by nature", P Meredith, C.J. Bettinger, M. Irimia-Vladu, A.B. Mostert and P.E. Schwenn, Reports on Progress in Physics, 76, 034501 (2013). [3] "Is melanin a semiconductor: humidity induced self doping and the electrical conductivity of a biopolymer", A.B. Mostert, B.J. Powell, F.L. Pratt, G.R. Hanson, T. Sarna, I.R. Gentle and P. Meredith, Proceedings of the National Academy of Sciences of the USA, 109(23), 8943-8947 (2012).

  14. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  15. Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 力虎林; 陆梅; 王成伟

    2002-01-01

    The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (/-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be

  16. Ultra-high-speed optical serial-to-parallel data conversion by time-domain optical Fourier transformation in a silicon nanowire

    DEFF Research Database (Denmark)

    Mulvad, Hans Christian Hansen; Palushani, Evarist; Hu, Hao;

    2011-01-01

    silicon nanowire. A total of 40 out of 64 tributaries of a 64 × 10 Gbit/s OTDM-DPSK data signal are simultaneously converted with a bit-error rate (BER) performance below the 2 × 10−3 FEC limit. Using a 50 m long highly nonlinear fiber (HNLF) for higher FWM conversion efficiency, 43 tributaries of a 64...... × 10 Gbit/s OTDM-OOK data signal are converted with error-free performance (BER......We demonstrate conversion from 64 × 10 Gbit/s optical timedivision multiplexed (OTDM) data to dense wavelength division multiplexed (DWDM) data with 25 GHz spacing. The conversion is achieved by time-domain optical Fourier transformation (OFT) based on four-wave mixing (FWM) in a 3.6 mm long...

  17. Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting

    Science.gov (United States)

    Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

    2016-06-01

    A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

  18. Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting.

    Science.gov (United States)

    Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

    2016-12-01

    A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future. PMID:27299654

  19. Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting.

    Science.gov (United States)

    Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

    2016-12-01

    A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

  20. Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

    Science.gov (United States)

    Yao, Maoqing; Sheng, Chunyang; Ge, Mingyuan; Chi, Chun-Yung; Cong, Sen; Nakano, Aiichiro; Dapkus, P Daniel; Zhou, Chongwu

    2016-02-23

    Monolithic integration of III-V semiconductors with Si has been pursued for some time in the semiconductor industry. However, the mismatch of lattice constants and thermal expansion coefficients represents a large technological challenge for the heteroepitaxial growth. Nanowires, due to their small lateral dimension, can relieve strain and mitigate dislocation formation to allow single-crystal III-V materials to be grown on Si. Here, we report a facile five-step heteroepitaxial growth of GaAs nanowires on Si using selective area growth (SAG) in metalorganic chemical vapor deposition, and we further report an in-depth study on the twin formation mechanism. Rotational twin defects were observed in the nanowire structures and showed strong dependence on the growth condition and nanowire size. We adopt a model of faceted growth to demonstrate the formation of twins during growth, which is well supported by both a transmission electron microscopy study and simulation based on nucleation energetics. Our study has led to twin-free segments in the length up to 80 nm, a significant improvement compared to previous work using SAG. The achievements may open up opportunities for future functional III-V-on-Si heterostructure devices. PMID:26831573

  1. Wavelength Conversion of a 640 Gbit/s DPSK Nyquist Channel Using a Low-Loss Silicon Nanowire

    DEFF Research Database (Denmark)

    Ji, Hua; Hu, Hao; Ding, Yunhong;

    2015-01-01

    640 Gbit/s N-OTDM DPSK wavelength conversion is demonstrated in a Si-nanowire.All 64 tributaries are converted within an average power penalty of 1 dB at the FEC BER-limit3E-3. Only 22-fJ/bit switching energy is required...

  2. Multilevel electrochemical signal detections of metalloprotein heterolayers for bioelectronic device

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Yong-Ho; Yoo, Si-Youl; Lee, Taek [Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of); Lee, Hun Joo [Interdisciplinary Program of Integrated Biotechnology, Sogang University, 35 Baekbeomro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of); Min, Junhong [School of Integrative Engineering, Chung-Ang University, Heukseok-dong, Dongjak-gu, Seoul 156-756 (Korea, Republic of); Choi, Jeong-Woo, E-mail: jwchoi@sogang.ac.kr [Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of); Interdisciplinary Program of Integrated Biotechnology, Sogang University, 35 Baekbeomro(Sinsu-dong), Mapo-gu, Seoul 121-742 (Korea, Republic of)

    2014-01-31

    In the present study, we investigated the simultaneous detection of multilevel electrochemical signals from various metalloprotein heterolayers for the bioelectronic devices. A layer-by-layer assembly method based on simple electrostatic interaction was introduced to form protein bilayers. The gold substrate was modified with poly (ethylene glycol) thiol acid as the precursor, which introduced negative charges to the surface. Based on the isoelectric point, net-charge controlled metalloproteins by pH adjustment were sequentially immobilized on this negatively charged substrate. The degree of protein immobilization on the gold substrate was confirmed by surface plasmon resonance spectroscopy, and the surface topology changes due to the protein immobilization were confirmed by atomic force microscopy. Redox signals in the protein layers were measured by cyclic voltammetry. As a result, various redox signals generated from different metalloproteins on a single electrode were monitored. This proposed method for the detection of multi-level electrochemical signals can be directly applied to bioelectronic devices that store multi-information in a single electrode. - Highlights: • We fabricated heterolayers composed of various metalloproteins. • Metalloproteins were immobilized by layer-by-layer assembly. • The degree of immobilization was controlled by the net charge of metalloproteins. • Various redox signals generated from heterolayers were well monitored.

  3. Photoelectrochemistry of Semiconductor Nanowire Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  4. Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

    Science.gov (United States)

    Chatterjee, Sulagna; Chattopadhyay, Sanatan

    2016-10-01

    An analytical model including the simultaneous impact of lattice and thermo-elastic constant mismatch-induced stress in nanowires on Insulator-on-Silicon substrate is developed. It is used to calibrate the finite-element based software, ANSYS, which is subsequently employed to estimate process-induced stress in the sequential steps of NW-FET fabrication. The model considers crystal structures and orientations for both the nanowires and substrates. In-plane stress components along nanowire-axis are estimated for different radii and fractions of insertion. Nature of longitudinal stress is observed to change when inserted fraction of nanowires is changed. Effect of various high-k gate-dielectrics is also investigated. A longitudinal tensile stress of 2.4 GPa and compressive stress of 1.89 GPa have been obtained for NW-FETs with 1/4th and 3/4th insertions with La2O3 and TiO2 as the gate-dielectrics, respectively. Therefore, it is possible to achieve comparable values of electron and hole mobility in NW-FETs by judiciously choosing gate-dielectrics and fractional insertion of the nanowires.

  5. Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics.

    Science.gov (United States)

    Kim, Sungho; Rim, Taiuk; Kim, Kihyun; Lee, Unsang; Baek, Eunhye; Lee, Hojoon; Baek, Chang-Ki; Meyyappan, M; Deen, M Jamal; Lee, Jeong-Soo

    2011-12-01

    We have fabricated Si nanowire (SiNW) based ion-sensitive field effect transistors (ISFETs) for biosensing applications. The ability to prepare a large number of sensors on a wafer, the use of standard silicon microfabrication techniques resulting in cost savings, and potential high sensitivity are significant advantages in favor of nanoscale SiNW ISFETs. The SiNW ISFETs with embedded Ag/AgCl reference electrode were fabricated on a standard silicon-on-insulator wafer using electron-beam lithography and conventional semiconductor processing technology. The current-voltage characteristics show an n-type FET behavior with a relatively high on/off current ratio, reasonable sub-threshold swing value, and low gate-leakage current. The pH responses of the ISFETs with different pH solutions were characterized at room temperature which showed a clear lateral shift of the drain current vs. gate voltage curve with a change in the pH value of the solution and a sensitivity of 40 mV pH(-1). The low frequency noise characteristics were investigated to evaluate the signal to noise ratio and sensing limit of the devices. PMID:22068238

  6. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    KAUST Repository

    Hazari, Arnab

    2015-11-12

    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

  7. Catalyst-Free Synthesis of ZnO Nanowires on Oxidized Silicon Substrate for Gas Sensing Applications.

    Science.gov (United States)

    Behera, B; Chandra, S

    2015-06-01

    In the present work, we report the synthesis of nanostructured ZnO by oxidation of zinc film without using a seed or catalyst layer. The zinc films were deposited on oxidized Si substrates by RF magnetron sputtering process. These were oxidized in dry and wet air/oxygen ambient. The optimized process yielded long nanowires of ZnO having diameter of around 60-70 nm and spread uniformly over the surface. The effect of oxidation temperature, time, Zn film thickness and the ambient has strong influence on the morphology of resulting nanostruxctured ZnO film. The films were characterized by scanning electron microscopy for morphological studies and X-ray diffraction (XRD) analysis to study the phase of the nanostructured ZnO. Room temperature photoluminescence (PL) measurements of the nanowires show UV and green emission. A sensor was designed and fabricated using nanostructured ZnO film, incorporating inter-digital-electrode (IDE) for the measurement of resistance of the sensing layer. The gas sensing properties were investigated from the measurement of change in resistance when exposed to vapours of different volatile organic compound (VOC) such as acetone, ethanol, methanol and 2-propanol. The results suggest that ZnO nanowires fabricated by this method have potential application in gas sensors.

  8. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  9. Olfactory Mucosa Tissue Based Biosensor for Bioelectronic Nose

    Science.gov (United States)

    Liu, Qingjun; Ye, Weiwei; Yu, Hui; Hu, Ning; Cai, Hua; Wang, Ping

    2009-05-01

    Biological olfactory system can distinguish thousands of odors. In order to realize the biomimetic design of electronic nose on the principle of mammalian olfactory system, we have reported bioelectronic nose based on cultured olfactory cells. In this study, the electrical property of the tissue-semiconductor interface was analyzed by the volume conductor theory and the sheet conductor model. Olfactory mucosa tissue of rat was isolated and fixed on the surface of the light-addressable potentiometric sensor (LAPS), with the natural stations of the neuronal populations and functional receptor unit of the cilia well reserved. By the extracellular potentials of the olfactory receptor cells of the mucosa tissue monitored, both the simulation and the experimental results suggested that this tissue-semiconductor hybrid system was sensitive to odorants stimulation.

  10. Surface effects on the electro-mechanical properties of silicon nano-ribbons and nano-wires

    OpenAIRE

    Bhaskar, Umesh Kumar

    2013-01-01

    The need for developing simple and generic characterization tools to deform freestanding silicon beams down to the nanometre scale, sufficiently equipped to investigate both the mechanical properties and the carrier transport under large strains, has been met in this research through the design of a versatile lab-on-chip. The Young’s modulus was observed to unexpectedly decrease from a bulk value of 169 GPa down to 96 GPa when varying the thickness of silicon from 200 down to 3...

  11. Top-down fabrication of very-high density vertically stacked silicon nanowire arrays with low temperature budget

    OpenAIRE

    Zervas, Michail; Sacchetto, Davide; De Micheli, Giovanni; Leblebici, Yusuf

    2011-01-01

    We report on a top-down complementary metal oxide semiconductor (CMOS) compatible fabrication method of ultra-high density Si nanowire (SiNW) arrays using a time multiplexed alternating process (TMAP) with low temperature budget. The flexibility of the fabrication methodology is demonstrated for curved and straight SiNW arrays with different shapes and levels. Ultra-high density SiNW arrays with round or rhombic cross-sections diameters as low as 10 nm are demonstrated for vertical and horizo...

  12. High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).

    Science.gov (United States)

    Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef

    2015-04-01

    The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space. PMID:25758029

  13. Efficiency Enhancement Mechanism for Poly(3, 4-ethylenedioxythiophene):Poly(styrenesulfonate)/Silicon Nanowires Hybrid Solar Cells Using Alkali Treatment

    Science.gov (United States)

    Jiang, Yurong; Gong, Xiu; Qin, Ruiping; Liu, Hairui; Xia, Congxin; Ma, Heng

    2016-05-01

    The efficiency enhancement mechanism of the alkali-treated Si nanowire (SiNW) solar cells is discussed and analyzed in detail, which is important to control the useful photovoltaic process. All the results demonstrate that the photovoltaic performance enhancement of alkali-treated SiNW device steps from the formation of the good core-shell heterojunction, which consequently enhances the junction area, promotes fast separating and transporting of electron and hole pairs, and reduces the carrier surface combination. It also indicates that alkali treatment for SiNWs is a promising processing as an economical method for the formation of good core-shell SiNW/polymer heterojunction.

  14. Stem-loop DNA-assisted silicon nanowires-based biochemical sensors with ultra-high sensitivity, specificity, and multiplexing capability

    Science.gov (United States)

    Xie, Juan; Jiang, Xiangxu; Zhong, Yiling; Lu, Yimei; Wang, Siyi; Wei, Xinpan; Su, Yuanyuan; He, Yao

    2014-07-01

    A class of stem-loop DNA-assisted silicon nanowires (SiNWs)-based fluorescent biosensor is presented in this report. Significantly, the sensor enables rapid and sensitive detection of DNA targets with a concentration as low as 1 pM. Moreover, the large planar surface of SiNWs facilitates simultaneous assembly with different DNA strands, which is favorable for multiplexed DNA detection. On the other hand, the SiNWs-based sensor is highly efficacious for detecting heavy metal ions. Mercury ions (Hg2+) of low concentrations (e.g., 5 pM) are readily identified from its mixture with over 10 kinds of interfering metal ions, even in real water samples. Given that SiNWs can be fabricated in a facile, reproducible and low-cost manner, this kind of SiNWs-based high-performance sensor is expected to be a practical analytical tool for a variety of biological and environment-protection applications.A class of stem-loop DNA-assisted silicon nanowires (SiNWs)-based fluorescent biosensor is presented in this report. Significantly, the sensor enables rapid and sensitive detection of DNA targets with a concentration as low as 1 pM. Moreover, the large planar surface of SiNWs facilitates simultaneous assembly with different DNA strands, which is favorable for multiplexed DNA detection. On the other hand, the SiNWs-based sensor is highly efficacious for detecting heavy metal ions. Mercury ions (Hg2+) of low concentrations (e.g., 5 pM) are readily identified from its mixture with over 10 kinds of interfering metal ions, even in real water samples. Given that SiNWs can be fabricated in a facile, reproducible and low-cost manner, this kind of SiNWs-based high-performance sensor is expected to be a practical analytical tool for a variety of biological and environment-protection applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01097c

  15. Constructing Novel Si@SnO2 Core-Shell Heterostructures by Facile Self-Assembly of SnO2 Nanowires on Silicon Hollow Nanospheres for Large, Reversible Lithium Storage.

    Science.gov (United States)

    Zhou, Zheng-Wei; Liu, Yi-Tao; Xie, Xu-Ming; Ye, Xiong-Ying

    2016-03-23

    Developing an industrially viable silicon anode, featured by the highest theoretical capacity (4200 mA h g(-1)) among common electrode materials, is still a huge challenge because of its large volume expansion during repeated lithiation-delithiation as well as low intrinsic conductivity. Here, we expect to address these inherent deficiencies simultaneously with an interesting hybridization design. A facile self-assembly approach is proposed to decorate silicon hollow nanospheres with SnO2 nanowires. The two building blocks, hand in hand, play a wonderful duet by bridging their appealing functionalities in a complementary way: (1) The silicon hollow nanospheres, in addition to the major role as a superior capacity contributor, also act as a host material (core) to partially accommodate the volume expansion, thus alleviating the capacity fading by providing abundant hollow interiors, void spaces, and surface areas. (2) The SnO2 nanowires serve as a conductive coating (shell) to enable efficient electron transport due to a relatively high conductivity, thereby improving the cyclability of silicon. Compared to other conductive dopants, the SnO2 nanowires with a high theoretical capacity (790 mA h g(-1)) can contribute outstanding electrochemical reaction kinetics, further adding value to the ultimate electrochemical performances. The resulting novel Si@SnO2 core-shell heterostructures exhibit remarkable synergy in large, reversible lithium storage, delivering a reversible capacity as high as 1869 mA h g(-1)@500 mA g(-1) after 100 charging-discharging cycles. PMID:26927734

  16. A self-heated silicon nanowire array: selective surface modification with catalytic nanoparticles by nanoscale Joule heating and its gas sensing applications.

    Science.gov (United States)

    Yun, Jeonghoon; Jin, Chun Yan; Ahn, Jae-Hyuk; Jeon, Seokwoo; Park, Inkyu

    2013-08-01

    We demonstrated novel methods for selective surface modification of silicon nanowire (SiNW) devices with catalytic metal nanoparticles by nanoscale Joule heating and local chemical reaction. The Joule heating of a SiNW generated a localized heat along the SiNW and produced endothermic reactions such as hydrothermal synthesis of nanoparticles or thermal decomposition of polymer thin films. In the first method, palladium (Pd) nanoparticles could be selectively synthesized and directly coated on a SiNW by the reduction of the Pd precursor via Joule heating of the SiNW. In the second method, a sequential process composed of thermal decomposition of a polymer, evaporation of a Pd thin film, and a lift-off process was utilized. The selective decoration of Pd nanoparticles on SiNW was successfully accomplished by using both methods. Finally, we demonstrated the applications of SiNWs decorated with Pd nanoparticles as hydrogen detectors. We also investigated the effect of self-heating of the SiNW sensor on its sensing performance. PMID:23770994

  17. High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability

    Science.gov (United States)

    Krause, Andreas; Dörfler, Susanne; Piwko, Markus; Wisser, Florian M.; Jaumann, Tony; Ahrens, Eike; Giebeler, Lars; Althues, Holger; Schädlich, Stefan; Grothe, Julia; Jeffery, Andrea; Grube, Matthias; Brückner, Jan; Martin, Jan; Eckert, Jürgen; Kaskel, Stefan; Mikolajick, Thomas; Weber, Walter M.

    2016-01-01

    We show full Li/S cells with the use of balanced and high capacity electrodes to address high power electro-mobile applications. The anode is made of an assembly comprising of silicon nanowires as active material densely and conformally grown on a 3D carbon mesh as a light-weight current collector, offering extremely high areal capacity for reversible Li storage of up to 9 mAh/cm2. The dense growth is guaranteed by a versatile Au precursor developed for homogenous Au layer deposition on 3D substrates. In contrast to metallic Li, the presented system exhibits superior characteristics as an anode in Li/S batteries such as safe operation, long cycle life and easy handling. These anodes are combined with high area density S/C composite cathodes into a Li/S full-cell with an ether- and lithium triflate-based electrolyte for high ionic conductivity. The result is a highly cyclable full-cell with an areal capacity of 2.3 mAh/cm2, a cyclability surpassing 450 cycles and capacity retention of 80% after 150 cycles (capacity loss <0.4% per cycle). A detailed physical and electrochemical investigation of the SiNW Li/S full-cell including in-operando synchrotron X-ray diffraction measurements reveals that the lower degradation is due to a lower self-reduction of polysulfides after continuous charging/discharging. PMID:27319783

  18. ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature.

    Science.gov (United States)

    Liao, Jiecui; Li, Zhengcao; Wang, Guojing; Chen, Chienhua; Lv, Shasha; Li, Mingyang

    2016-02-14

    ZnO nanorod/porous silicon nanowire (ZnO/PSiNW) hybrids with three different structures as highly sensitive NO2 gas sensors were obtained. PSiNWs were first synthesized by metal-assisted chemical etching, and then seeded in three different ways. After that ZnO nanorods were grown on the seeded surface of PSiNWs using a hydrothermal procedure. ZnO/PSiNW hybrids showed excellent gas sensing performance for various NO2 concentrations (5-50 ppm) at room temperature, and the electrical resistance change rate reached as high as 35.1% when responding to 50 ppm NO2. The distinct enhancement was mainly attributed to the faster carrier transportation after combination, the increase in gas sensing areas and the oxygen vacancy (VO) concentration. Moreover, the p-type gas sensing behavior was explained by the gas sensing mechanism and the effect of VO concentration on gas sensing properties was also discussed concerning the photoluminescence (PL) spectra performance.

  19. Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers

    Science.gov (United States)

    Gupta, Neha; Chaujar, Rishu

    2016-08-01

    In this paper, we have investigated the small-signal behaviour and RF noise performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET, and the results so obtained are simultaneously compared with SiNW and conventional MOSFET at THz frequency range. This work examines reflection and transmission coefficients, noise conductance, minimum noise figure and cross-correlation factor. Results reveal significant reduction in input/output reflection coefficient and an increase in forward/reverse transmission coefficient owing to improved transconductance in GEWE-SiNW in comparison with conventional counterparts. It is also observed that minimum noise figure and noise conductance of GEWE-SiNW is reduced by 17.4 and 31.2 %, respectively, in comparison with SiNW, thus fortifying its potential application for low-noise amplifiers (LNAs) at radio frequencies. Moreover, the efficacy of gate metal workfunction engineering is also studied and the results validate that tuning of workfunction difference results further improvement in device small-signal behaviour and noise performance.

  20. High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability.

    Science.gov (United States)

    Krause, Andreas; Dörfler, Susanne; Piwko, Markus; Wisser, Florian M; Jaumann, Tony; Ahrens, Eike; Giebeler, Lars; Althues, Holger; Schädlich, Stefan; Grothe, Julia; Jeffery, Andrea; Grube, Matthias; Brückner, Jan; Martin, Jan; Eckert, Jürgen; Kaskel, Stefan; Mikolajick, Thomas; Weber, Walter M

    2016-01-01

    We show full Li/S cells with the use of balanced and high capacity electrodes to address high power electro-mobile applications. The anode is made of an assembly comprising of silicon nanowires as active material densely and conformally grown on a 3D carbon mesh as a light-weight current collector, offering extremely high areal capacity for reversible Li storage of up to 9 mAh/cm(2). The dense growth is guaranteed by a versatile Au precursor developed for homogenous Au layer deposition on 3D substrates. In contrast to metallic Li, the presented system exhibits superior characteristics as an anode in Li/S batteries such as safe operation, long cycle life and easy handling. These anodes are combined with high area density S/C composite cathodes into a Li/S full-cell with an ether- and lithium triflate-based electrolyte for high ionic conductivity. The result is a highly cyclable full-cell with an areal capacity of 2.3 mAh/cm(2), a cyclability surpassing 450 cycles and capacity retention of 80% after 150 cycles (capacity loss <0.4% per cycle). A detailed physical and electrochemical investigation of the SiNW Li/S full-cell including in-operando synchrotron X-ray diffraction measurements reveals that the lower degradation is due to a lower self-reduction of polysulfides after continuous charging/discharging. PMID:27319783

  1. Isolation and Identification of Post-Transcriptional Gene Silencing-Related Micro-RNAs by Functionalized Silicon Nanowire Field-effect Transistor

    Science.gov (United States)

    Chen, Kuan-I.; Pan, Chien-Yuan; Li, Keng-Hui; Huang, Ying-Chih; Lu, Chia-Wei; Tang, Chuan-Yi; Su, Ya-Wen; Tseng, Ling-Wei; Tseng, Kun-Chang; Lin, Chi-Yun; Chen, Chii-Dong; Lin, Shih-Shun; Chen, Yit-Tsong

    2015-11-01

    Many transcribed RNAs are non-coding RNAs, including microRNAs (miRNAs), which bind to complementary sequences on messenger RNAs to regulate the translation efficacy. Therefore, identifying the miRNAs expressed in cells/organisms aids in understanding genetic control in cells/organisms. In this report, we determined the binding of oligonucleotides to a receptor-modified silicon nanowire field-effect transistor (SiNW-FET) by monitoring the changes in conductance of the SiNW-FET. We first modified a SiNW-FET with a DNA probe to directly and selectively detect the complementary miRNA in cell lysates. This SiNW-FET device has 7-fold higher sensitivity than reverse transcription-quantitative polymerase chain reaction in detecting the corresponding miRNA. Next, we anchored viral p19 proteins, which bind the double-strand small RNAs (ds-sRNAs), on the SiNW-FET. By perfusing the device with synthesized ds-sRNAs of different pairing statuses, the dissociation constants revealed that the nucleotides at the 3‧-overhangs and pairings at the terminus are important for the interactions. After perfusing the total RNA mixture extracted from Nicotiana benthamiana across the device, this device could enrich the ds-sRNAs for sequence analysis. Finally, this bionanoelectronic SiNW-FET, which is able to isolate and identify the interacting protein-RNA, adds an additional tool in genomic technology for the future study of direct biomolecular interactions.

  2. High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability

    Science.gov (United States)

    Krause, Andreas; Dörfler, Susanne; Piwko, Markus; Wisser, Florian M.; Jaumann, Tony; Ahrens, Eike; Giebeler, Lars; Althues, Holger; Schädlich, Stefan; Grothe, Julia; Jeffery, Andrea; Grube, Matthias; Brückner, Jan; Martin, Jan; Eckert, Jürgen; Kaskel, Stefan; Mikolajick, Thomas; Weber, Walter M.

    2016-06-01

    We show full Li/S cells with the use of balanced and high capacity electrodes to address high power electro-mobile applications. The anode is made of an assembly comprising of silicon nanowires as active material densely and conformally grown on a 3D carbon mesh as a light-weight current collector, offering extremely high areal capacity for reversible Li storage of up to 9 mAh/cm2. The dense growth is guaranteed by a versatile Au precursor developed for homogenous Au layer deposition on 3D substrates. In contrast to metallic Li, the presented system exhibits superior characteristics as an anode in Li/S batteries such as safe operation, long cycle life and easy handling. These anodes are combined with high area density S/C composite cathodes into a Li/S full-cell with an ether- and lithium triflate-based electrolyte for high ionic conductivity. The result is a highly cyclable full-cell with an areal capacity of 2.3 mAh/cm2, a cyclability surpassing 450 cycles and capacity retention of 80% after 150 cycles (capacity loss cycle). A detailed physical and electrochemical investigation of the SiNW Li/S full-cell including in-operando synchrotron X-ray diffraction measurements reveals that the lower degradation is due to a lower self-reduction of polysulfides after continuous charging/discharging.

  3. Efficiency Enhancement Mechanism for Poly(3, 4-ethylenedioxythiophene):Poly(styrenesulfonate)/Silicon Nanowires Hybrid Solar Cells Using Alkali Treatment.

    Science.gov (United States)

    Jiang, Yurong; Gong, Xiu; Qin, Ruiping; Liu, Hairui; Xia, Congxin; Ma, Heng

    2016-12-01

    The efficiency enhancement mechanism of the alkali-treated Si nanowire (SiNW) solar cells is discussed and analyzed in detail, which is important to control the useful photovoltaic process. All the results demonstrate that the photovoltaic performance enhancement of alkali-treated SiNW device steps from the formation of the good core-shell heterojunction, which consequently enhances the junction area, promotes fast separating and transporting of electron and hole pairs, and reduces the carrier surface combination. It also indicates that alkali treatment for SiNWs is a promising processing as an economical method for the formation of good core-shell SiNW/polymer heterojunction. PMID:27225423

  4. Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

    Science.gov (United States)

    Yu, Eunseon; Cho, Seongjae

    2016-11-01

    In this work, a nanowire p-type metal–oxide–semiconductor field-effect transistor (PMOSFET) coaxially having a Si core and a Ge peripheral channel is designed and characterized by device simulations. Owing to the high hole mobility of Ge, the device can be utilized for high-speed CMOS integrated circuits, with the effective confinement of mobile holes in Ge by the large valence band offset between Si and Ge. Source/drain doping concentrations and the ratio between the Si core and Ge channel thicknesses are determined. On the basis of the design results, the channel length is aggressively scaled down by evaluating the primary DC parameters in order to confirm device scalability and low-power applicability in sub-10-nm technology nodes.

  5. Microcantilever equipped with nanowire template electrodes for multiprobe measurement on fragile nanostructures

    DEFF Research Database (Denmark)

    Lin, Rong; Bøggild, Peter; Hansen, Ole

    2004-01-01

    can be done by reducing the dimensions of the electrodes to nanoscale dimensions. Here we report a fabrication method of a nanoscale four-point probe utilizing silicon nanowires as templates for metal electrodes. Using nanomanipulation, we attach 200–300 nm wide silicon nanowires to microfabricated...... cantilevers. By subsequently covering these nanowires with a metallic coating, they are made conducting and at the same time fixed to the cantilevers. These silicon nanowire four-point probes were tested on 7 and 35 nm thick Au films as well as poorly adhering 16 nm thin Au nanowires deposited on a silicon...

  6. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and addition

  7. Organic bioelectronics probing conformational changes in surface confined proteins.

    Science.gov (United States)

    Macchia, Eleonora; Alberga, Domenico; Manoli, Kyriaki; Mangiatordi, Giuseppe F; Magliulo, Maria; Palazzo, Gerardo; Giordano, Francesco; Lattanzi, Gianluca; Torsi, Luisa

    2016-01-01

    The study of proteins confined on a surface has attracted a great deal of attention due to its relevance in the development of bio-systems for laboratory and clinical settings. In this respect, organic bio-electronic platforms can be used as tools to achieve a deeper understanding of the processes involving protein interfaces. In this work, biotin-binding proteins have been integrated in two different organic thin-film transistor (TFT) configurations to separately address the changes occurring in the protein-ligand complex morphology and dipole moment. This has been achieved by decoupling the output current change upon binding, taken as the transducing signal, into its component figures of merit. In particular, the threshold voltage is related to the protein dipole moment, while the field-effect mobility is associated with conformational changes occurring in the proteins of the layer when ligand binding occurs. Molecular Dynamics simulations on the whole avidin tetramer in presence and absence of ligands were carried out, to evaluate how the tight interactions with the ligand affect the protein dipole moment and the conformation of the loops surrounding the binding pocket. These simulations allow assembling a rather complete picture of the studied interaction processes and support the interpretation of the experimental results. PMID:27312768

  8. Organic bioelectronics probing conformational changes in surface confined proteins

    Science.gov (United States)

    Macchia, Eleonora; Alberga, Domenico; Manoli, Kyriaki; Mangiatordi, Giuseppe F.; Magliulo, Maria; Palazzo, Gerardo; Giordano, Francesco; Lattanzi, Gianluca; Torsi, Luisa

    2016-06-01

    The study of proteins confined on a surface has attracted a great deal of attention due to its relevance in the development of bio-systems for laboratory and clinical settings. In this respect, organic bio-electronic platforms can be used as tools to achieve a deeper understanding of the processes involving protein interfaces. In this work, biotin-binding proteins have been integrated in two different organic thin-film transistor (TFT) configurations to separately address the changes occurring in the protein-ligand complex morphology and dipole moment. This has been achieved by decoupling the output current change upon binding, taken as the transducing signal, into its component figures of merit. In particular, the threshold voltage is related to the protein dipole moment, while the field-effect mobility is associated with conformational changes occurring in the proteins of the layer when ligand binding occurs. Molecular Dynamics simulations on the whole avidin tetramer in presence and absence of ligands were carried out, to evaluate how the tight interactions with the ligand affect the protein dipole moment and the conformation of the loops surrounding the binding pocket. These simulations allow assembling a rather complete picture of the studied interaction processes and support the interpretation of the experimental results.

  9. Controlled growth of single nanowires within a supported alumina template

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.;

    2006-01-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire...... patterns as well as arrays of single nanowires with a precise position and spacing. © IOP Publishing Ltd....

  10. Tungsten oxide nanowire synthesis from amorphous-like tungsten films.

    Science.gov (United States)

    Seelaboyina, Raghunandan

    2016-03-18

    A synthesis technique which can lead to direct integration of tungsten oxide nanowires onto silicon chips is essential for preparing various devices. The conversion of amorphous tungsten films deposited on silicon chips by pulsed layer deposition to nanowires by annealing is an apt method in that direction. This perspective discusses the ingenious features of the technique reported by Dellasega et al on the various aspects of tungsten oxide nanowire synthesis. PMID:26871521

  11. EDITORIAL: Design and function of molecular and bioelectronics devices

    Science.gov (United States)

    Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

    2007-10-01

    Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers

  12. Design and function of molecular and bioelectronics devices.

    Science.gov (United States)

    Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

    2007-10-24

    Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers

  13. Design and function of molecular and bioelectronics devices.

    Science.gov (United States)

    Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

    2007-10-24

    Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers

  14. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  15. Imaging Spatial Variations in the Dissipation and Transport of Thermal Energy within Individual Silicon Nanowires Using Ultrafast Microscopy.

    Science.gov (United States)

    Cating, Emma E M; Pinion, Christopher W; Van Goethem, Erika M; Gabriel, Michelle M; Cahoon, James F; Papanikolas, John M

    2016-01-13

    Thermal management is an important consideration for most nanoelectronic devices, and an understanding of the thermal conductivity of individual device components is critical for the design of thermally efficient systems. However, it can be difficult to directly probe local changes in thermal conductivity within a nanoscale system. Here, we utilize the time-resolved and diffraction-limited imaging capabilities of ultrafast pump-probe microscopy to determine, in a contact-free configuration, the local thermal conductivity in individual Si nanowires (NWs). By suspending single NWs across microfabricated trenches in a quartz substrate, the properties of the same NW both on and off the substrate are directly compared. We find the substrate has no effect on the recombination lifetime or diffusion length of photogenerated charge carriers; however, it significantly impacts the thermal relaxation properties of the NW. In substrate-supported regions, thermal energy deposited into the lattice by the ultrafast laser pulse dissipates within ∼10 ns through thermal diffusion and coupling to the substrate. In suspended regions, the thermal energy persists for over 100 ns, and we directly image the time-resolved spatial motion of the thermal signal. Quantitative analysis of the transient images permits direct determination of the NW's local thermal conductivity, which we find to be a factor of ∼4 smaller than in bulk Si. Our results point to the strong potential of pump-probe microscopy to be used as an all-optical method to quantify the effects of localized environment and morphology on the thermal transport characteristics of individual nanostructured components. PMID:26629610

  16. Molecular precursor derived silicon boron carbonitride/carbon nanotube and silicon oxycarbide/carbon nanotube composite nanowires for energy based applications

    Science.gov (United States)

    Bhandavat, Romil

    Molecular precursor derived ceramics (also known as polymer-derived ceramics or PDCs) are high temperature glasses that have been studied for applications involving operation at elevated temperatures. Prepared from controlled thermal degradation of liquid-phase organosilicon precursors, these ceramics offer remarkable engineering properties such as resistance to crystallization up to 1400 °C, semiconductor behavior at high temperatures and intense photoluminescence. These properties are a direct result of their covalent bonded amorphous network and free (-sp2) carbon along with mixed Si/B/C/N/O bonds, which otherwise can not be obtained through conventional ceramic processing techniques. This thesis demonstrates synthesis of a unique core/shell type nanowire structure involving either siliconboroncarbonitride (SiBCN) or siliconoxycarbide (SiOC) as the shell with carbon nanotube (CNT) acting as the core. This was made possible by liquid phase functionalization of CNT surfaces with respective polymeric precursor (e.g., home-made boron-modified polyureamethylvinylsilazane for SiBCN/CNT and commercially obtained polysiloxane for SiOC/CNT), followed by controlled pyrolysis in inert conditions. This unique architecture has several benefits such as high temperature oxidation resistance (provided by the ceramic shell), improved electrical conductivity and mechanical toughness (attributed to the CNT core) that allowed us to explore its use in energy conversion and storage devices. The first application involved use of SiBCN/CNT composite as a high temperature radiation absorbant material for laser thermal calorimeter. SiBCN/CNT spray coatings on copper substrate were exposed to high energy laser beams (continuous wave at 10.6 mum 2.5 kW CO2 laser, 10 seconds) and resulting change in its microstructure was studied ex-situ. With the aid of multiple techniques we ascertained the thermal damage resistance to be 15 kW/cm -2 with optical absorbance exceeding 97%. This represents

  17. Programmable bioelectronics in a stimuli-encoded 3D graphene interface

    Science.gov (United States)

    Parlak, Onur; Beyazit, Selim; Tse-Sum-Bui, Bernadette; Haupt, Karsten; Turner, Anthony P. F.; Tiwari, Ashutosh

    2016-05-01

    The ability to program and mimic the dynamic microenvironment of living organisms is a crucial step towards the engineering of advanced bioelectronics. Here, we report for the first time a design for programmable bioelectronics, with `built-in' switchable and tunable bio-catalytic performance that responds simultaneously to appropriate stimuli. The designed bio-electrodes comprise light and temperature responsive compartments, which allow the building of Boolean logic gates (i.e. ``OR'' and ``AND'') based on enzymatic communications to deliver logic operations.The ability to program and mimic the dynamic microenvironment of living organisms is a crucial step towards the engineering of advanced bioelectronics. Here, we report for the first time a design for programmable bioelectronics, with `built-in' switchable and tunable bio-catalytic performance that responds simultaneously to appropriate stimuli. The designed bio-electrodes comprise light and temperature responsive compartments, which allow the building of Boolean logic gates (i.e. ``OR'' and ``AND'') based on enzymatic communications to deliver logic operations. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02355j

  18. Silicon based ultrafast optical waveform sampling

    DEFF Research Database (Denmark)

    Ji, Hua; Galili, Michael; Pu, Minhao;

    2010-01-01

    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode...

  19. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  20. Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

    Science.gov (United States)

    Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

    2016-08-01

    Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir-Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

  1. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo

    2014-11-15

    Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.

  2. Nanowire liquid pumps

    Science.gov (United States)

    Huang, Jian Yu; Lo, Yu-Chieh; Niu, Jun Jie; Kushima, Akihiro; Qian, Xiaofeng; Zhong, Li; Mao, Scott X.; Li, Ju

    2013-04-01

    The ability to form tiny droplets of liquids and control their movements is important in printing or patterning, chemical reactions and biological assays. So far, such nanofluidic capabilities have principally used components such as channels, nozzles or tubes, where a solid encloses the transported liquid. Here, we show that liquids can flow along the outer surface of solid nanowires at a scale of attolitres per second and the process can be directly imaged with in situ transmission electron microscopy. Microscopy videos show that an ionic liquid can be pumped along tin dioxide, silicon or zinc oxide nanowires as a thin precursor film or as beads riding on the precursor film. Theoretical analysis suggests there is a critical film thickness of ~10 nm below which the liquid flows as a flat film and above which it flows as discrete beads. This critical thickness is the result of intermolecular forces between solid and liquid, which compete with liquid surface energy and Rayleigh-Plateau instability.

  3. Ab initio quasi-particle approximation bandgaps of silicon nanowires calculated at density functional theory/local density approximation computational effort

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, M., E-mail: ribeiro.jr@oorbit.com.br [Office of Operational Research for Business Intelligence and Technology, Principal Office, Buffalo, Wyoming 82834 (United States)

    2015-06-21

    Ab initio calculations of hydrogen-passivated Si nanowires were performed using density functional theory within LDA-1/2, to account for the excited states properties. A range of diameters was calculated to draw conclusions about the ability of the method to correctly describe the main trends of bandgap, quantum confinement, and self-energy corrections versus the diameter of the nanowire. Bandgaps are predicted with excellent accuracy if compared with other theoretical results like GW, and with the experiment as well, but with a low computational cost.

  4. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

    DEFF Research Database (Denmark)

    Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi;

    2013-01-01

    Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The tra......Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements...

  5. Recent Advances in Flexible and Stretchable Bio-Electronic Devices Integrated with Nanomaterials.

    Science.gov (United States)

    Choi, Suji; Lee, Hyunjae; Ghaffari, Roozbeh; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-06-01

    Flexible and stretchable electronics and optoelectronics configured in soft, water resistant formats uniquely address seminal challenges in biomedicine. Over the past decade, there has been enormous progress in the materials, designs, and manufacturing processes for flexible/stretchable system subcomponents, including transistors, amplifiers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy storage elements, and bare die integrated circuits. Nanomaterials prepared using top-down processing approaches and synthesis-based bottom-up methods have helped resolve the intrinsic mechanical mismatch between rigid/planar devices and soft/curvilinear biological structures, thereby enabling a broad range of non-invasive, minimally invasive, and implantable systems to address challenges in biomedicine. Integration of therapeutic functional nanomaterials with soft bioelectronics demonstrates therapeutics in combination with unconventional diagnostics capabilities. Recent advances in soft materials, devices, and integrated systems are reviewes, with representative examples that highlight the utility of soft bioelectronics for advanced medical diagnostics and therapies. PMID:26779680

  6. Recent Advances in Flexible and Stretchable Bio-Electronic Devices Integrated with Nanomaterials.

    Science.gov (United States)

    Choi, Suji; Lee, Hyunjae; Ghaffari, Roozbeh; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-06-01

    Flexible and stretchable electronics and optoelectronics configured in soft, water resistant formats uniquely address seminal challenges in biomedicine. Over the past decade, there has been enormous progress in the materials, designs, and manufacturing processes for flexible/stretchable system subcomponents, including transistors, amplifiers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy storage elements, and bare die integrated circuits. Nanomaterials prepared using top-down processing approaches and synthesis-based bottom-up methods have helped resolve the intrinsic mechanical mismatch between rigid/planar devices and soft/curvilinear biological structures, thereby enabling a broad range of non-invasive, minimally invasive, and implantable systems to address challenges in biomedicine. Integration of therapeutic functional nanomaterials with soft bioelectronics demonstrates therapeutics in combination with unconventional diagnostics capabilities. Recent advances in soft materials, devices, and integrated systems are reviewes, with representative examples that highlight the utility of soft bioelectronics for advanced medical diagnostics and therapies.

  7. Discrimination of Umami Tastants Using Floating Electrode-Based Bioelectronic Tongue Mimicking Insect Taste Systems.

    Science.gov (United States)

    Lee, Minju; Jung, Je Won; Kim, Daesan; Ahn, Young-Joon; Hong, Seunghun; Kwon, Hyung Wook

    2015-12-22

    We report a floating electrode-based bioelectronic tongue mimicking insect taste systems for the detection and discrimination of umami substances. Here, carbon nanotube field-effect transistors with floating electrodes were hybridized with nanovesicles containing honeybee umami taste receptor, gustatory receptor 10 of Apis mellifera (AmGr10). This strategy enables us to discriminate between l-monosodium glutamate (MSG), best-known umami tastant, and non-umami substances with a high sensitivity and selectivity. It could also be utilized for the detection of MSG in liquid food such as chicken stock. Moreover, we demonstrated the synergism between MSG and disodium 5'-inosinate (IMP) for the umami taste using this platform. This floating electrode-based bioelectronic tongue mimicking insect taste systems can be a powerful platform for various applications such as food screening, and it also can provide valuable insights on insect taste systems. PMID:26563753

  8. Bioelectronic tongues: New trends and applications in water and food analysis.

    Science.gov (United States)

    Cetó, Xavier; Voelcker, Nicolas H; Prieto-Simón, Beatriz

    2016-05-15

    Over the last years, there has been an increasing demand for fast, highly sensitive and selective methods of analysis to meet new challenges in environmental monitoring, food safety and public health. In response to this demand, biosensors have arisen as a promising tool, which offers accurate chemical data in a timely and cost-effective manner. However, the difficulty to obtain sensors with appropriate selectivity and sensitivity for a given analyte, and to solve analytical problems which do not require the quantification of a certain analyte, but an overall effect on a biological system (e.g. toxicity, quality indices, provenance, freshness, etc.), led to the concept of electronic tongues as a new strategy to tackle these problems. In this direction, to improve the performance of electronic tongues, and thus to spawn new application fields, biosensors have recently been incorporated to electronic tongue arrays, leading to what is known as bioelectronic tongues. Bioelectronic tongues provide superior performance by combining the capabilities of electronic tongues to derive meaning from complex or imprecise data, and the high selectivity and specificity of biosensors. The result is postulated as a tool that exploits chemometrics to solve biosensors' interference problems, and biosensors to solve electronic tongues' selectivity problems. The review presented herein aims to illustrate the capabilities of bioelectronic tongues as analytical tools, especially suited for screening analysis, with particular emphasis in water analysis and the characterization of food and beverages. After briefly reviewing the key concepts related to the design and principles of electronic tongues, we provide an overview of significant contributions to the field of bioelectronic tongues and their future perspectives.

  9. Bioelectronic tongues: New trends and applications in water and food analysis.

    Science.gov (United States)

    Cetó, Xavier; Voelcker, Nicolas H; Prieto-Simón, Beatriz

    2016-05-15

    Over the last years, there has been an increasing demand for fast, highly sensitive and selective methods of analysis to meet new challenges in environmental monitoring, food safety and public health. In response to this demand, biosensors have arisen as a promising tool, which offers accurate chemical data in a timely and cost-effective manner. However, the difficulty to obtain sensors with appropriate selectivity and sensitivity for a given analyte, and to solve analytical problems which do not require the quantification of a certain analyte, but an overall effect on a biological system (e.g. toxicity, quality indices, provenance, freshness, etc.), led to the concept of electronic tongues as a new strategy to tackle these problems. In this direction, to improve the performance of electronic tongues, and thus to spawn new application fields, biosensors have recently been incorporated to electronic tongue arrays, leading to what is known as bioelectronic tongues. Bioelectronic tongues provide superior performance by combining the capabilities of electronic tongues to derive meaning from complex or imprecise data, and the high selectivity and specificity of biosensors. The result is postulated as a tool that exploits chemometrics to solve biosensors' interference problems, and biosensors to solve electronic tongues' selectivity problems. The review presented herein aims to illustrate the capabilities of bioelectronic tongues as analytical tools, especially suited for screening analysis, with particular emphasis in water analysis and the characterization of food and beverages. After briefly reviewing the key concepts related to the design and principles of electronic tongues, we provide an overview of significant contributions to the field of bioelectronic tongues and their future perspectives. PMID:26761617

  10. Understanding quantum confinement in nanowires: basics, applications and possible laws

    International Nuclear Information System (INIS)

    A comprehensive investigation of quantum confinement in nanowires has been carried out. Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires. Fundamentals and applications of quantum confinement in nanowires and possible laws obeyed by these nanowires, have been investigated. These laws may serve as backbones of nanowire science and technology. The relationship between energy band gap and nanowire diameter has been studied. This relationship appears to be universal. A thorough review indicates that the first principles results for quantum confinement vary widely. The possible cause of this variation has been examined. Surface passivation and surface reconstruction of nanowires have been elucidated. It has been found that quantum confinement owes its origin to surface strain resulting from surface passivation and surface reconstruction and hence thin nanowires may actually be crystalline-core/amorphous-shell (c-Si/a-Si) nanowires. Experimental data available in the literature corroborate with the suggestion. The study also reveals an intrinsic relationship between quantum confinement and the surface amorphicity of nanowires. It demonstrates that surface amorphicity may be an important tool to investigate the electronic, optoelectronic and sensorial properties of quantum-confined nanowires. (topical review)

  11. Nanowire photonics

    Directory of Open Access Journals (Sweden)

    Peter J. Pauzauskie

    2006-10-01

    Full Text Available The development of integrated electronic circuitry ranks among the most disruptive and transformative technologies of the 20th century. Even though integrated circuits are ubiquitous in modern life, both fundamental and technical constraints will eventually test the limits of Moore's law. Nanowire photonic circuitry constructed from myriad one-dimensional building blocks offers numerous opportunities for the development of next-generation optical information processors and spectroscopy. However, several challenges remain before the potential of nanowire building blocks is fully realized. We cover recent advances in nanowire synthesis, characterization, lasing, integration, and the eventual application to relevant technical and scientific questions.

  12. Ultralow-power hydrogen sensing with single palladium nanowires

    NARCIS (Netherlands)

    Offermans, P.; Tong, H.D.; Rijn, C.J.M. van; Merken, P.; Brongersma, S.H.; Crego-Calama, M.

    2009-01-01

    Palladium nanowires were fabricated on silicon substrates using conventional microfabrication techniques. Sensors based on such nanowires show a reversible response to hydrogen concentrations as low as 27 ppm with response times varying from 5 s (H2 concentrations >20%) to 30 s (H2 concentrations <1

  13. Lithographically patterned nanowire electrodeposition

    Science.gov (United States)

    Xiang, Chengxiang

    Lithographically patterned nanowire electrodeposition (LPNE) is a new method for fabricating polycrystalline metal nanowires using electrodeposition. In LPNE, a sacrificial metal (M1 = silver or nickel) layer, 5 - 100 nm in thickness, is first vapor deposited onto a glass, oxidized silicon, or Kapton polymer film. A photoresist (PR) layer is then deposited, photopatterned, and the exposed Ag or Ni is removed by wet etching. The etching duration is adjusted to produce an undercut ≈300 nm in width at the edges of the exposed PR. This undercut produces a horizontal trench with a precisely defined height equal to the thickness of theM1 layer. Within this trench, a nanowire of metal M2 is electrodeposited (M2 = gold, platinum, palladium, or bismuth). Finally the PR layer and M1 layer are removed. The nanowire height and width can be independently controlled down to minimum dimensions of 5 nm (h) and 11 nm (w), for example, in the case of platinum. These nanowires can be 1 cm in total length. We measure the temperature-dependent resistance of 100 um sections of Au and Pd wires in order to estimate an electrical grain size for comparison with measurements by X-ray diffraction and transmission electron microscopy. Nanowire arrays can be postpatterned to produce two-dimensional arrays of nanorods. Nanowire patterns can also be overlaid one on top of another by repeating the LPNE process twice in succession to produce, for example, arrays of low-impedance, nanowirenanowire junctions. The resistance, R, of single gold nanowires was measured in situ during electrooxidation in aqueous 0.10 M sulfuric acid. Electrooxidation caused the formation of a gold oxide that is approximately 0.8 monolayers (ML) in thickness at +1.1 V vs saturated mercurous sulfate reference electrode (MSE) based upon coulometry and ex situ X-ray photoelectron spectroscopic analysis. As the gold nanowires were electrooxidized, R increased by an amount that depended on the wire thickness, ranging from

  14. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina;

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... to be well understood [2]. Nanowires from para-phenylenes, from ®-thiophenes, and from phenylene/thiophene co-oligomers, Fig. 1, are investigated exemplarily. Epitaxy and electrostatic interactions determine the microscopic growth mechanism, whereas kinetics ascertains the macroscopic habit. Results from...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  15. Electrodeposited germanium nanowires.

    Science.gov (United States)

    Mahenderkar, Naveen K; Liu, Ying-Chau; Koza, Jakub A; Switzer, Jay A

    2014-09-23

    Germanium (Ge) is a group IV semiconductor with superior electronic properties compared with silicon, such as larger carrier mobilities and smaller effective masses. It is also a candidate anode material for lithium-ion batteries. Here, a simple, one-step method is introduced to electrodeposit dense arrays of Ge nanowires onto indium tin oxide (ITO) substrates from aqueous solution. The electrochemical reduction of ITO produces In nanoparticles that act as a reduction site for aqueous Ge(IV) species, and as a solvent for the crystallization of Ge nanowires. Nanowires deposited at 95 °C have an average diameter of 100 nm, whereas those deposited at room temperature have an average diameter of 35 nm. Both optical absorption and Raman spectroscopy suggest that the electrodeposited Ge is degenerate. The material has an indirect bandgap of 0.90-0.92 eV, compared with a value of 0.67 eV for bulk, intrinsic Ge. The blue shift is attributed to the Moss-Burstein effect, because the material is a p-type degenerate semiconductor. On the basis of the magnitude of the blue shift, the hole concentration is estimated to be 8 × 10(19) cm(-3). This corresponds to an In impurity concentration of about 0.2 atom %. The resistivity of the wires is estimated to be 4 × 10(-5) Ω·cm. The high conductivity of the wires should make them ideal for lithium-ion battery applications. PMID:25157832

  16. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  17. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  18. Facile synthesis of vanadium oxide nanowires

    Science.gov (United States)

    Kysar, Jesse; Sekhar, Praveen Kumar

    2016-10-01

    A simple growth process is reported for the synthesis of vanadium (II) oxide nanowires with an average width of 65 nm and up to 5 μm in length for growth at 1000 °C for 3 h. The vanadium (II) oxide nanowires were grown on a gold-coated silicon substrate at ambient pressure using a single heat zone furnace with Ar as the carrier gas. Gold was utilized as a catalyst for the growth of the nanowires. The growth temperature and heating time were varied to observe the nanowire morphology. An increase in nanowire width was observed with an increase in the heating temperature. A ninefold increase in the number density of the nanowires was observed when the heating time was changed from 30 min to 3 h. This is the first time a simple growth process for producing VO nanowires at ambient pressure has been demonstrated. Such a scheme enables wider use of VO nanowires in critical applications such as energy storage, gas sensors, and optical devices.

  19. Synthesis and photoluminescence of heavily La-doped α-Si{sub 3}N{sub 4} nanowires via nitriding cyromilled nanocrystalline La-doped silicon powder

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhihao; Huang, Zhifeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Chen, Fei, E-mail: chenfei027@gmail.com [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China); Shen, Qiang [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Lianmeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China)

    2014-07-01

    In this paper, the synthesis of heavily La-doped α-Si{sub 3}N{sub 4} nanowires is firstly reported via nitriding the cryomilled La-doped nanocrystalline Si powder. The crystal structure, electronic structure and band structure of La-doped α-Si{sub 3}N{sub 4} are calculated by using the CASTEP program code based on the first principles plane-wave pseudo-potential method. The microstructure and photoluminescence of heavily La-doped α-Si{sub 3}N{sub 4} nanowires are investigated. The results suggest that La has been already incorporated into Si lattice after the cryomilling process and then successfully entered the lattice of α-Si{sub 3}N{sub 4} with the nitridation process. The as-synthesized heavily La-doped α-Si{sub 3}N{sub 4} nanowires show high purity and good crystallinity with 30–40 nm in diameter and several tens of micrometers in length. The optical property shows that there is an intense violet–blue visible emission from 350 nm to 450 nm with one peak at 388 nm due to the recombination between the valence band and the N{sub 4}{sup +} level at room temperature, which is in agreement with the calculated band structure of La-doped α-Si{sub 3}N{sub 4}. - Highlights: • Nanocrystalline La-doped Si powders are prepared by cryomilling with liquid nitrogen. • Heavily La-doped α-Si{sub 3}N{sub 4} nanowires are synthesized via nitriding La-doped Si powder. • Crystal structure and band structure of La-doped α-Si{sub 3}N{sub 4} are calculated. • La-doped α-Si{sub 3}N{sub 4} nanowires have an intense violet–blue visible emission at room temperature. • The photoluminescence mechanism of La-doped α-Si{sub 3}N{sub 4} nanowires is discussed.

  20. Lithographically patterned nanowire electrodeposition: a method for patterning electrically continuous metal nanowires on dielectrics.

    Science.gov (United States)

    Xiang, Chenxiang; Kung, Sheng-Chin; Taggart, David K; Yang, Fan; Thompson, Michael A; Güell, Aleix G; Yang, Yongan; Penner, Reginald M

    2008-09-23

    Lithographically patterned nanowire electrodeposition (LPNE) is a new method for fabricating polycrystalline metal nanowires using electrodeposition. In LPNE, a sacrificial metal (M(1)=silver or nickel) layer, 5-100 nm in thickness, is first vapor deposited onto a glass, oxidized silicon, or Kapton polymer film. A (+) photoresist (PR) layer is then deposited, photopatterned, and the exposed Ag or Ni is removed by wet etching. The etching duration is adjusted to produce an undercut approximately 300 nm in width at the edges of the exposed PR. This undercut produces a horizontal trench with a precisely defined height equal to the thickness of the M(1) layer. Within this trench, a nanowire of metal M(2) is electrodeposited (M(2)=gold, platinum, palladium, or bismuth). Finally the PR layer and M(1) layer are removed. The nanowire height and width can be independently controlled down to minimum dimensions of 5 nm (h) and 11 nm (w), for example, in the case of platinum. These nanowires can be 1 cm in total length. We measure the temperature-dependent resistance of 100 microm sections of Au and Pd wires in order to estimate an electrical grain size for comparison with measurements by X-ray diffraction and transmission electron microscopy. Nanowire arrays can be postpatterned to produce two-dimensional arrays of nanorods. Nanowire patterns can also be overlaid one on top of another by repeating the LPNE process twice in succession to produce, for example, arrays of low-impedance, nanowire-nanowire junctions.