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Sample records for bioconjugated inp quantum

  1. Imaging pancreatic cancer using bioconjugated InP quantum dots.

    Science.gov (United States)

    Yong, Ken-Tye; Ding, Hong; Roy, Indrajit; Law, Wing-Cheung; Bergey, Earl J; Maitra, Anirban; Prasad, Paras N

    2009-03-24

    In this paper, we report the successful use of non-cadmium-based quantum dots (QDs) as highly efficient and nontoxic optical probes for imaging live pancreatic cancer cells. Indium phosphide (core)-zinc sulfide (shell), or InP/ZnS, QDs with high quality and bright luminescence were prepared by a hot colloidal synthesis method in nonaqueous media. The surfaces of these QDs were then functionalized with mercaptosuccinic acid to make them highly dispersible in aqueous media. Further bioconjugation with pancreatic cancer specific monoclonal antibodies, such as anticlaudin 4 and antiprostate stem cell antigen (anti-PSCA), to the functionalized InP/ZnS QDs, allowed specific in vitro targeting of pancreatic cancer cell lines (both immortalized and low passage ones). The receptor-mediated delivery of the bioconjugates was further confirmed by the observation of poor in vitro targeting in nonpancreatic cancer based cell lines which are negative for the claudin-4-receptor. These observations suggest the immense potential of InP/ZnS QDs as non-cadmium-based safe and efficient optical imaging nanoprobes in diagnostic imaging, particularly for early detection of cancer.

  2. The influence of bio-conjugation on photoluminescence of CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, Tetyana V. [ESFM Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, México, D.F. 07738 (Mexico); Vorobiev, Yuri V. [Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro (Mexico); Makhniy, Victor P. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi (Ukraine); Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico)

    2014-11-15

    We report a considerable blue shift in the luminescence spectra of CdSe/ZnS quantum dots conjugated to anti-interleukin-10 antibodies. This phenomenon can be explained theoretically by accounting for bio-conjugation as a process causing electrostatic interaction between a quantum dot and an antibody, which reduces effective volume of the dot core. To solve the Schrödinger equation for an exciton confined in the quantum dot, we use mirror boundary conditions that were successfully tested for different geometries of quantum wells.

  3. InAs quantum wires on InP substrate for VCSEL applications

    OpenAIRE

    Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

    2008-01-01

    International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

  4. Quantum dots–DNA bioconjugates: synthesis to applications

    Science.gov (United States)

    2016-01-01

    Semiconductor nanoparticles particularly quantum dots (QDs) are interesting alternatives to organic fluorophores for a range of applications such as biosensing, imaging and therapeutics. Addition of a programmable scaffold such as DNA to QDs further expands the scope and applicability of these hybrid nanomaterials in biology. In this review, the most important stages of preparation of QD–DNA conjugates for specific applications in biology are discussed. Special emphasis is laid on (i) the most successful strategies to disperse QDs in aqueous media, (ii) the range of different conjugation with detailed discussion about specific merits and demerits in each case, and (iii) typical applications of these conjugates in the context of biology. PMID:27920898

  5. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  6. InP quantum dots embedded in GaP: Optical properties and carrier dynamics

    International Nuclear Information System (INIS)

    Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

    2003-01-01

    The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

  7. Transformation of photoluminescence spectra at the bioconjugation of core-shell CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Macotela, L.G.V.; Douda, J. [UPIITA - Instituto Politecnico Nacional, Mexico (Mexico); Torchynska, T.V. [ESFM- Instituto Politecnico Nacional, Mexico (Mexico); Sierra, R.P. [CINVESTAV del IPN, Mexico (Mexico); Shcherbyna, L. [V. Lashkarev Institute of Semiconductor Physics at NASU, Kiev (Ukraine)

    2010-04-15

    The photoluminescence (PL) of nonconjugated and bioconjugated core-shell CdSe/ZnS quantum dots (QDs) has been discussed in this paper. Commercial CdSe/ZnS QDs with the size of 3.6-4.0 nm covered by polymer with emission at 560-565 nm (2.19-2.22 eV) have been used. The QD bioconjugation is performed with the mouse anti PSA (Prostate-Specific Antigen) antibody (mab). PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in the CdSe core (2.19-2.22 eV) and to hot electron-hole emission via surface states (2.37, 2.73 and 3.06 eV) at the CdSe/ZnS or ZnS/polymer interfaces. The PL spectrum of bioconjugated QDs has changed dramatically, with essential decreasing of the hot electron-hole recombination flow via interface states. This effect is explained on the base of re-charging of QD interface states at the bioconjugation. It is shown that the CdSe/ZnS QDs with interface states are very promising for the study of bioconjugation effects to antibodies (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Biological sensing and control of emission dynamics of quantum dot bioconjugates using arrays of long metallic nanorods.

    Science.gov (United States)

    Sadeghi, Seyed M; Gutha, Rithvik R; Wing, Waylin J; Sharp, Christina; Capps, Lucas; Mao, Chuanbin

    2017-01-01

    We study biological sensing using plasmonic and photonic-plasmonic resonances of arrays of ultralong metallic nanorods and analyze the impact of these resonances on emission dynamics of quantum dot bioconjugates. We demonstrate that the LSPRs and plasmonic lattice modes of such array can be used to detect a single self-assembled monolayer of alkanethiol at the visible (550 nm) and near infrared (770 nm) range with well resolved shifts. We study adsorption of streptavidin-quantum dot conjugates to this monolayer, demonstrating that formation of nearly two dimensional arrays of quantum dots with limited emission blinking can lead to extra well-defined wavelength shifts in these modes. Using spectrally-resolved lifetime measurements we study the emission dynamics of such quantum dot bioconjugates within their monodispersed size distribution. We show that, despite their close vicinity to the nanorods, the rate of energy transfer from these quantum dots to nanorods is rather weak, while the plasmon field enhancement can be strong. Our results reveal that the nanorods present a strongly wavelength or size-dependent non-radiative decay channel to the quantum dot bioconjugates.

  9. Impact of Antibody Bioconjugation on Emission and Energy Band Profile of CdSeTe/ZnS Quantum Dots

    Science.gov (United States)

    Torchynska, T. V.; Gomez, J. A. Jaramillo; Polupan, G.; Macotela, L. G. Vega

    2018-03-01

    The variation of the photoluminescence (PL) and Raman scattering spectra of CdSeTe/ZnS quantum dots (QDs) on conjugation to an antibody has been investigated. Two types of CdSeTe/ZnS QD with different emission wavelength (705 nm and 800 nm) were studied comparatively before and after conjugation to anti-pseudorabies virus antibody (AB). Nonconjugated QDs were characterized by Gaussian-type PL bands. PL shifts to higher energy and asymmetric shape of PL bands was detected in PL spectra of bioconjugated QDs. The surface-enhanced Raman scattering effect was exhibited by the bioconjugated CdSeTe/ZnS QDs, indicating that the excitation light used in the Raman study generated electric dipoles in the AB molecules. The optical bandgap of the CdSeTe core was calculated numerically as a function of its radius based on an effective mass approximation model. The energy band diagrams for non- and bioconjugated CdSeTe/ZnS QDs were obtained, revealing a type II quantum well in the CdSeTe core. The calculations show that AB dipoles, excited in the bioconjugated QDs, stimulate a change in the energy band diagram of the QDs that alters the PL spectrum. These results could be useful for improving the sensitivity of QD biosensors.

  10. Physical reasons of emission transformation in infrared CdSeTe/ZnS quantum dots at bioconjugation

    Science.gov (United States)

    Torchynska, T. V.

    2015-04-01

    The core/shell CdSeTe/ZnS quantum dots (QDs) with emission at 780-800 nm (1.55-1.60 eV) have been studied by means of photoluminescence (PL) and Raman scattering methods in the nonconjugated state and after conjugation to different antibodies (Ab): (i) mouse monoclonal [8C9] human papilloma virus Ab, anti-HPV 16-E7 Ab, (ii) mouse monoclonal [C1P5] human papilloma virus HPV16 E6+HPV18 E6 Ab, and (iii) pseudo rabies virus (PRV) Ab. The transformations of PL and Raman scattering spectra of QDs, stimulated by conjugated antibodies, have been revealed and discussed. The energy band diagram of core/shell CdSeTe/ZnS QDs has been designed that helps to analyze the PL spectra and their transformations at the bioconjugation. It is shown that the core in CdSeTe/ZnS QDs is complex and including the type II quantum well. The last fact permits to explain the nature of infrared (IR) optical transitions (1.55-1.60 eV) and the high energy PL band (1.88-1.94 eV) in the nonconjugated and bioconjugated QDs. A set of physical reasons has been analyzed with the aim to explain the transformation of PL spectra in bioconjugated QDs. Finally it is shown that two factors are responsible for the PL spectrum transformation at bioconjugation to charged antibodies: (i) the change of energy band profile in QDs and (ii) the shift of QD energy levels in the strong quantum confinement case. The effect of PL spectrum transformation is useful for the study of QD bioconjugation to specific antibodies and can be a powerful technique for early medical diagnostics.

  11. Synthesis of colloidal InP nanocrystal quantum dots

    International Nuclear Information System (INIS)

    Sirbu, L.; Gutul, T.; Todosiciuc, A.; Danila, M.; Muller, R.; Sarua, A.; Webster, R.; Tiginyanu, I.M.; Ursaki, V.

    2013-01-01

    InP nano dots with the diameter of 4-10 nm were synthesized using sol-gel method. The nano dot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328 nm which agrees within 3% of the literature value. Prepared nanoparticles where characterized then by Raman spectroscopy and Xray diffraction. Performed measurements confirm good crystalline quality of obtained InP particles, which can be used as a basis for THz emitters, LED, and OLED displays. (authors)

  12. The mechanism of the photoluminescence changes in bio-conjugated CdSe/ZnS quantum dots

    Science.gov (United States)

    Borkovska, L.; Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V.; Rachkov, O.; Kryshtab, T.

    2013-09-01

    The change of the photoluminescence (PL) and optical characteristics in non-conjugated and conjugated with S6K2 antibody CdSe/ZnS core/shell quantum dots (QDs) during storage in air has been studied by the conventional PL, micro-PL and micro-Raman techniques. The QDs dried on a crystalline Si substrate were kept in the darkness and under illumination. In the PL spectra, the storage resulted in a blue shift of PL peak position, in the increasing of the full width at a half maximum (FWHM) of the PL band and in the decreasing of the PL intensity. In the Raman spectra, the shift of the CdSe LO peak position to the low frequency region and the increasing of its FWHM were observed. The transformations in the PL and optical characteristics correlate with each other and are found to be the largest in bio-conjugated QDs stored under illumination. The increase of the light intensity accelerated the changes occurred during storage. An oxidation of the QD core, which decreases the QD size, is supposed to be responsible for observed transformations. The bio-conjugation is assumed to promote QD oxidation that results in different PL peak position in stored non-conjugated and bio-conjugated QDs. The mechanism of the effect is discussed.

  13. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Science.gov (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  14. Formation of quantum wires and dots on InP(001) by As/P exchange

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Ballet, P.; Salamo, G. J.

    2001-01-01

    We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

  15. The detection of platelet derived growth factor using decoupling of quencher-oligonucleotide from aptamer/quantum dot bioconjugates

    International Nuclear Information System (INIS)

    Kim, Gang-Il; Sung, Yun-Mo; Kim, Kyung-Woo; Oh, Min-Kyu

    2009-01-01

    High-sensitivity, high-specificity detection of platelet derived growth factor (PDGF)-BB was realized using the change in fluorescence resonance energy transfer (FRET) occurring between quantum dot (QD) donors and black hole quencher (BHQ) acceptors. CdSe/ZnS QD/mercaptoacetic acid (MAA)/PDGF aptamer bioconjugates were successfully synthesized using ligand exchange. Black hole quencher (BHQ)-bearing oligonucleotide molecules showing partial sequence matching to PDGF aptamer were attached to PDGF aptamers and photoluminescence (PL) quenching was obtained through FRET. By adding target PDGF-BB to the bioconjugates containing BHQs, PL recovery was detected due to detachment of BHQ-bearing oligonucleotide from the PDGF aptamer as a result of the difference in affinity to the PDGF aptamer. The detection limit of the sensor was ∼0.4 nM and the linearity was maintained up to 1.6 nM in the PL intensity versus concentration curve. Measurement of PL recovery was suggested as a strong tool for high-sensitivity detection of PDGF-BB. Epidermal growth factor (EGF), the negative control molecule, did not contribute to PL recovery due to lack of binding affinity to the PDGF aptamers, which demonstrates the selectivity of the biosensor.

  16. Asymmetric flow field-flow fractionation coupled to inductively coupled plasma mass spectrometry for the quantification of quantum dots bioconjugation efficiency.

    Science.gov (United States)

    Menéndez-Miranda, Mario; Encinar, Jorge Ruiz; Costa-Fernández, José M; Sanz-Medel, Alfredo

    2015-11-27

    Hyphenation of asymmetric flow field-flow fractionation (AF4) to an on-line elemental detection (inductively coupled plasma-mass spectrometry, ICP-MS) is proposed as a powerful diagnostic tool for quantum dots bioconjugation studies. In particular, conjugation effectiveness between a "model" monoclonal IgG antibody (Ab) and CdSe/ZnS core-shell Quantum Dots (QDs), surface-coated with an amphiphilic polymer, has been monitored here by such hybrid AF4-ICP-MS technique. Experimental conditions have been optimized searching for a proper separation between the sought bioconjugates from the eventual free reagents excesses employed during the bioconjugation (QDs and antibodies). Composition and pH of the carrier have been found to be critical parameters to ensure an efficient separation while ensuring high species recovery from the AF4 channel. An ICP-MS equipped with a triple quadropole was selected as elemental detector to enable sensitive and reliable simultaneous quantification of the elemental constituents, including sulfur, of the nanoparticulated species and the antibody. The hyphenated technique used provided nanoparticle size-based separation, elemental detection, and composition analysis capabilities that turned out to be instrumental in order to investigate in depth the Ab-QDs bioconjugation process. Moreover, the analytical strategy here proposed allowed us not only to clearly identify the bioconjugation reaction products but also to quantify nanoparticle:antibodies bioconjugation efficiency. This is a key issue in future development of analytical and bioanalytical photoluminescent QDs applications. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. Variation of Raman spectra of CdSe/ZnS quantum dots at the bioconjugation

    Energy Technology Data Exchange (ETDEWEB)

    Macotela, L.G.V.; Douda, J. [UPIITA - Instituto Politecnico Nacional, Mexico (Mexico); Torchynska, T.V. [ESFM - Instituto Politecnico Nacional, Mexico (Mexico); Sierra, R.P. [CINVESTAV del IPN, Mexico (Mexico)

    2010-04-15

    This paper presents the results of comparative analysis of Raman scattering spectra of CdSe/ZnS QDs covered by polymer with and without bio-conjugation to the mouse anti PSA (Prostate-Specific Antigen) antibodies (mab). Commercial CdSe/ZnS QDs used in the study are characterized by the color emission with the maximum at 565 nm (2.19 eV) at 300 K. Raman scattering spectra measured at room temperature demonstrate two groups of peaks: (i) related to the Si substrate at 230-460, 522, 610, 670, 940-1040 cm{sup -1} and (2) to polymer on the QD surface in the spectral range 1268-3310 cm{sup -1}. It is revealed that the QD bio-conjugation to the anti PSA mab is accompanied by the variation dramatically in the intensity of Raman lines of both types. The explanation of Raman peak stimulation in bio-conjugated QDs has been proposed on the base of surface enhanced Raman scattering (SERS) effect (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Phosphine synthetic route features and postsynthetic treatment of InP quantum dots

    International Nuclear Information System (INIS)

    Mordvinova, Natalia; Vinokurov, Alexander; Dorofeev, Sergey; Kuznetsova, Tatiana; Znamenkov, Konstantin

    2014-01-01

    Highlights: • Quantum dots with average diameter of 3–5 nm were synthesized. • PH 3 was used as novel phosphorous precursor. • Electrophoresis was demonstrated to be an effective method of purification of QDs. • Photoeching leads to quantum yields about 20%. • The concentration and time dependencies for photoetching of QDs were obtained. -- Abstract: In this paper we report on the development of synthesis of InP quantum dots with a gaseous phosphine PH 3 as a source of phosphorus and myristic acid and TOP/TOPO as stabilizers. Samples synthesized using myristic acid as stabilizer at relatively low temperatures were found to contain admixture of In(OH) 3 . We studied the influence of HF concentration and duration of illumination on luminescence properties of InP quantum dots during photoetching process. Quantum yields of photoetched samples reached about 20%. Additionally, electrophoresis as a new technique of purification and size-depended separation of synthesized quantum dots was developed

  19. Enhancement effect of CdTe quantum dots-IgG bioconjugates on chemiluminescence of luminol-H2O2 system

    International Nuclear Information System (INIS)

    Kanwal, Shamsa; Traore, Zoumana; Zhao Chunfang; Su Xingguang

    2010-01-01

    In this paper we developed an entirely new and highly sensitive luminol-H 2 O 2 flow injection chemiluminescence system using the enhancement effect of CdTe quantum dots-IgG bioconjugates. Immunoglobulin G (IgG) as a kind of bio-molecule was conjugated to different sized CdTe semiconductor quantum dots (QDs). Using PL spectra and CL intensity profiles, it was found that chemiluminescence resonance energy transfer (CRET) was possibly occurring between CdTe-IgG bioconjugate and luminol. Under optimum conditions, increase of IgG concentration in CdTe-IgG bioconjugate resulted enhancing effect on CL intensity of luminol-H 2 O 2 system. Moreover quenching effects on CL intensity by addition of different proteases can construct turn off biosensor for these proteases with low detection limits and wide linear range. Furthermore, the effects of various organic and inorganic species on CdTe-IgG bioconjugates enhanced luminol-H 2 O 2 CL system were also studied in this paper.

  20. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    International Nuclear Information System (INIS)

    Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

    2016-01-01

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

  1. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

    2016-05-21

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

  2. Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses.

    Science.gov (United States)

    Laufersky, Geoffry; Bradley, Siobhan; Frécaut, Elian; Lein, Matthias; Nann, Thomas

    2018-05-10

    The synthesis of colloidal indium phosphide quantum dots (InP QDs) has always been plagued by difficulties arising from limited P3- sources. Being effectively restricted to the highly pyrophoric tris(trimethylsilyl) phosphine (TMS3P) creates complications for the average chemist and presents a significant risk for industrially scaled reactions. The adaptation of tris(dialkylamino) phosphines for these syntheses has garnered attention, as these new phosphines are much safer and can generate nanoparticles with competitive photoluminescence properties to those from (TMS)3P routes. Until now, the reaction mechanics of this precursor were elusive due to many experimental optimizations, such as the inclusion of a high concentration of zinc salts, being atypical of previous InP syntheses. Herein, we utilize density functional theory calculations to outline a logical reaction mechanism. The aminophosphine precursor is found to require activation by a zinc halide before undergoing a disproportionation reaction to self-reduce this P(iii) material to a P(-iii) source. We use this understanding to adapt this precursor for a two-pot nanoparticle synthesis in a noncoordinating solvent outside of glovebox conditions. This allowed us to generate spherical InP/ZnS nanoparticles possessing fluorescence quantum yields >55% and lifetimes as fast as 48 ns, with tunable emission according to varying zinc halide acidity. The development of high quality and efficient InP QDs with this safer aminophosphine in simple Schlenk environments will enable a broader range of researchers to synthesize these nontoxic materials for a variety of high-value applications.

  3. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    Science.gov (United States)

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  4. MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

    International Nuclear Information System (INIS)

    Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

    2010-01-01

    To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

  5. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

    Science.gov (United States)

    2012-01-01

    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

  6. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

    Science.gov (United States)

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

    2011-03-01

    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

  7. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    International Nuclear Information System (INIS)

    Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

    2006-01-01

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

  8. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  9. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    Science.gov (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  10. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

    International Nuclear Information System (INIS)

    Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

    2006-01-01

    Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

  11. RAFT polymerization mediated bioconjugation strategies

    OpenAIRE

    Bulmuş, Volga

    2011-01-01

    This review aims to highlight the use of RAFT polymerization in the synthesis of polymer bioconjugates. It covers two main bioconjugation strategies using the RAFT process: (i) post-polymerization bioconjugations using pre-synthesized reactive polymers, and (ii) bioconjugations via in situ polymerization using biomolecule-modified monomers or chain transfer agents. © 2011 The Royal Society of Chemistry.

  12. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    International Nuclear Information System (INIS)

    Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

    2012-01-01

    Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  13. Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (1 0 0) and (3 1 1)B substrates by self-organized anisotropic strain engineering

    NARCIS (Netherlands)

    Sritirawisarn, N.; Wera, J.L.E.; Otten, van F.W.M.; Nötzel, R.

    2010-01-01

    The formation of ordered InAs/InP quantum dot (QD) arrays is demonstrated on patterned InP (1 0 0) and (3 1 1)B substrates by the concept of self-organized anisotropic strain engineering in chemical beam epitaxy (CBE). On shallow- and deep stripe-patterned InP (1 0 0) substrates, depending on the

  14. Investigating bioconjugation by atomic force microscopy

    Science.gov (United States)

    2013-01-01

    Nanotechnological applications increasingly exploit the selectivity and processivity of biological molecules. Integration of biomolecules such as proteins or DNA into nano-systems typically requires their conjugation to surfaces, for example of carbon-nanotubes or fluorescent quantum dots. The bioconjugated nanostructures exploit the unique strengths of both their biological and nanoparticle components and are used in diverse, future oriented research areas ranging from nanoelectronics to biosensing and nanomedicine. Atomic force microscopy imaging provides valuable, direct insight for the evaluation of different conjugation approaches at the level of the individual molecules. Recent technical advances have enabled high speed imaging by AFM supporting time resolutions sufficient to follow conformational changes of intricately assembled nanostructures in solution. In addition, integration of AFM with different spectroscopic and imaging approaches provides an enhanced level of information on the investigated sample. Furthermore, the AFM itself can serve as an active tool for the assembly of nanostructures based on bioconjugation. AFM is hence a major workhorse in nanotechnology; it is a powerful tool for the structural investigation of bioconjugation and bioconjugation-induced effects as well as the simultaneous active assembly and analysis of bioconjugation-based nanostructures. PMID:23855448

  15. Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

    Science.gov (United States)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2018-04-01

    To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

  16. Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires

    International Nuclear Information System (INIS)

    Lindgren, David; Kawaguchi, Kenichi; Heurlin, Magnus; Borgström, Magnus T; Pistol, Mats-Erik; Samuelson, Lars; Gustafsson, Anders

    2013-01-01

    Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core–shell InP–InAs wurtzite nanowires grown using metal–organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1–12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging. (paper)

  17. Bioconjugates of luminescent CdSe-ZnS quantum dots with an engineered two-domain protein G for use in fluoroimmunoassays

    Science.gov (United States)

    Tran, Phan T.; Goldman, Ellen R.; Mattoussi, Hedi M.; Anderson, George P.; Mauro, J. Matthew

    2001-06-01

    Colloidal semiconductor quantum dots (QDs) seem suitable for labeling certain biomolecules for use in fluorescent tagging applications, such as fluoro-immunoassays. Compared to organic dye labels, Qds are resistant to photo-degradation, and these luminescent nanoparticles have size-dependent emission spectra spanning a wide range of wavelengths in the visible and near IR. We previously described an electrostatic self-assembly approach for conjugating highly luminescent colloidal CdSe-ZnS core-shell Qds with engineered two-domain recombinant proteins. Here we describe the application of this approach to prepare QD conjugates with the (Beta) 2 immunoglobin G (IgG) binding domain of streptococcal protein G (PG) appended with a basic lucine zipper attachment domain (PG-zb). We also demonstrate that the QD/PG conjugates retain their ability to bind IgG antibodies, and that a specific antibody coupled to QD via the PG functional domain efficiently binds its antigen. These preliminary results indicate that electrostatically self-assembled QD/PG-zb/IgG bioconjugates can be used in fluoro-immunoassays.

  18. Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization

    OpenAIRE

    Lamy , Jean-Michel; Levallois , Christophe; Nakkar , Abdulhadi; Caroff , Philippe; Paranthoen , Cyril; Dehaese , Olivier; Le Corre , Alain; Ramdane , Abderrahim; Loualiche , Slimane

    2006-01-01

    International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is...

  19. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  20. Cellular trafficking of quantum dot-ligand bioconjugates and their induction of changes in normal routing of unconjugated ligands

    DEFF Research Database (Denmark)

    Tekle, Christina; van Deurs, Bo; Sandvig, Kirsten

    2008-01-01

    Can quantum dots (Qdots) act as relevant intracellular probes to investigate routing of ligands in live cells? The intracellular trafficking of Qdots that were coupled to the plant toxin ricin, Shiga toxin, or the ligand transferrin (Tf) was studied by confocal fluorescence microscopy. The Tf...

  1. Quantum dot bio-conjugate: as a western blot probe for highly sensitive detection of cellular proteins

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Sonia [Agharkar Research Institute (India); Kale, Anup [University of Alabama, Center for Materials for Information Technology (United States); Gholap, Haribhau; Rana, Abhimanyu [National Chemical Laboratory, Physical and Materials Chemistry Division (India); Desai, Rama [National Centre for Cell Science (India); Banpurkar, Arun [University of Pune, Department of Physics (India); Ogale, Satishchandra, E-mail: sb.ogale@ncl.res.in [National Chemical Laboratory, Physical and Materials Chemistry Division (India); Shastry, Padma, E-mail: padma@nccs.res.in [National Centre for Cell Science (India)

    2012-03-15

    In the present study, we report a quantum dot (QD)-tailored western blot analysis for a sensitive, rapid and flexible detection of the nuclear and cytoplasmic proteins. Highly luminescent CdTe and (CdTe)ZnS QDs are synthesized by aqueous method. High resolution transmission electron microscopy, Raman spectroscopy, fourier transform infrared spectroscopy, fluorescence spectroscopy and X-ray diffraction are used to characterize the properties of the quantum dots. The QDs are functionalized with antibodies of prostate apoptosis response-4 (Par-4), poly(ADP-ribose) polymerases and {beta} actin to specifically bind with the proteins localized in the nucleus and cytoplasm of the cells, respectively. The QD-conjugated antibodies are used to overcome the limitations of conventional western blot technique. The sensitivity and rapidity of protein detection in QD-based approach is very high, with detection limits up to 10 pg of protein. In addition, these labels provide the capability of enhanced identification and localization of marker proteins in intact cells by confocal laser scanning microscopy.

  2. Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.

    Science.gov (United States)

    Haffouz, Sofiane; Zeuner, Katharina D; Dalacu, Dan; Poole, Philip J; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D; Zwiller, Valery; Williams, Robin L

    2018-05-09

    We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

  3. Terbium to Quantum Dot FRET Bioconjugates for Clinical Diagnostics: Influence of Human Plasma on Optical and Assembly Properties

    Directory of Open Access Journals (Sweden)

    Niko Hildebrandt

    2011-10-01

    Full Text Available Förster resonance energy transfer (FRET from luminescent terbium complexes (LTC as donors to semiconductor quantum dots (QDs as acceptors allows extraordinary large FRET efficiencies due to the long Förster distances afforded. Moreover, time-gated detection permits an efficient suppression of autofluorescent background leading to sub-picomolar detection limits even within multiplexed detection formats. These characteristics make FRET-systems with LTC and QDs excellent candidates for clinical diagnostics. So far, such proofs of principle for highly sensitive multiplexed biosensing have only been performed under optimized buffer conditions and interactions between real-life clinical media such as human serum or plasma and LTC-QD-FRET-systems have not yet been taken into account. Here we present an extensive spectroscopic analysis of absorption, excitation and emission spectra along with the luminescence decay times of both the single components as well as the assembled FRET-systems in TRIS-buffer, TRIS-buffer with 2% bovine serum albumin, and fresh human plasma. Moreover, we evaluated homogeneous LTC-QD FRET assays in QD conjugates assembled with either the well-known, specific biotin-streptavidin biological interaction or, alternatively, the metal-affinity coordination of histidine to zinc. In the case of conjugates assembled with biotin-streptavidin no significant interference with the optical and binding properties occurs whereas the histidine-zinc system appears to be affected by human plasma.

  4. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    Science.gov (United States)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

    2016-03-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

  5. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    International Nuclear Information System (INIS)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Casalboni, M.; Hatami, F.; Masselink, W.T.; Zhang, H.

    2016-01-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N 2 ) and in solvent vapours of methanol, chloroform, acetone and water were measured. The presence of vapors of chloroform, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed. (paper)

  6. InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

    International Nuclear Information System (INIS)

    Cao, Meng; Wu, Hui-Zhen; Lao, Yan-Feng; Cao, Chun-Fang; Liu, Cheng

    2009-01-01

    The intermixing effect on InAs 0.45 P 0.55 /InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.

  7. Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

    Science.gov (United States)

    Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

    2017-10-01

    We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

  8. Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

    Science.gov (United States)

    Qui, Y.; Uhl, D.; Keo, S.

    2003-01-01

    Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

  9. Ultra-sensitive detection of ibuprofen (IBP) by electrochemical aptasensor using the dendrimer-quantum dot (Den-QD) bioconjugate as an immobilization platform with special features

    Energy Technology Data Exchange (ETDEWEB)

    Roushani, Mahmoud, E-mail: m.roushani@ilam.ac.ir; Shahdost-fard, Faezeh

    2017-06-01

    This study describes a high-performance electrochemical aptasensor which is employed to detect Ibuprofen (IBP) as a painkiller drug by using a novel platform as an integrated sensing interface. In order to make the aptasensor, the Den-QD bioconjugate was immobilized on the surface of a GC electrode and followed the Apt was incubated on this surface. The incubation of the IBP on the aptasensor surface and the formation of the Apt/IBP complex, led to a hindered electron transfer reaction on the sensing surface, which decreased the peak current of the redox probe. Under the optimum condition, the assay had two dynamic ranges with a detection limit down to 333 fM. The developed aptasensor reliably detects IBP in a real sample. Our results demonstrated that the proposed strategy has many advantages and the Den-QD bioconjugate may become a promising nanocomposite for the electrochemical sensing applications. - Highlights: • Fabrication of an ultrasensitive electrochemical nanotool based on target-including conformational switching of an Apt. • The covalent attachment of a 5'-NH2-3'-AgNPs terminated Apt on the surface of a GCE electrode with CdTe QDs. • The use of CdTe QDs as a platform and the elimination of antibodies or enzymes are the advantages of this aptasensor.

  10. Epitaxial grown InP quantum dots on a GaAs buffer realized on GaP/Si(001) templates

    Energy Technology Data Exchange (ETDEWEB)

    Hartwig, Walter; Wiesner, Michael; Koroknay, Elisabeth; Paul, Matthias; Jetter, Michael; Michler, Peter [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen und Research Center SCoPE, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)

    2013-07-01

    The increasing necessity of higher computational capacity and security in the information technology requires originally technical solutions, which today's standard microelectronics, as their technical limits are close, can't provide anymore. One way out offers the integration of III-V semiconductor photonics with low-dimensional structures in current CMOS technology, enabling on-chip quantum optical applications, like quantum cryptography or quantum computing. Challenges in the heteroepitaxy of III-V semiconductors and silicon are the mismatches in material properties of the both systems. Defects, like dislocations and anti-phase domains (APDs), inhibit the monolithic integration of III-V semiconductor on Si. We present the growth of a thin GaAs buffer on CMOS-compatible oriented Si(001) by metal-organic vapor-phase epitaxy. To circumvent the forming APDs in the GaAs buffer a GaP on Si template (provided by NAsP{sub III/V} GmbH) was used. The dislocation density was then reduced by integrating several layers of InAs quantum dots in the GaAs buffer to bend the threading misfit dislocations. On top of this structure we grew InP quantum dots embedded in a Al{sub x}Ga{sub 1-x}InP composition and investigated the photoluminescence properties.

  11. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    Energy Technology Data Exchange (ETDEWEB)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S. [UMR C6082 FOTON - INSA de Rennes, 20 Avenue des Buttes de Coesmes, 35043 Rennes (France); Ramdane, A. [Laboratoire de Photonique et Nanostructures, CNRS UPR20, Route de Nozay, 91460 Marcoussis (France)

    2007-06-15

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 {mu}m at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 {mu}m strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    International Nuclear Information System (INIS)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S.; Ramdane, A.

    2007-01-01

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 μm at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 μm strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  14. Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes.

    Science.gov (United States)

    Wu, Kaifeng; Song, Nianhui; Liu, Zheng; Zhu, Haiming; Rodríguez-Córdoba, William; Lian, Tianquan

    2013-08-15

    Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

  15. Bio-Conjugates for Nanoscale Applications

    DEFF Research Database (Denmark)

    Villadsen, Klaus

    Bio-conjugates for Nanoscale Applications is the title of this thesis, which covers three different projects in chemical bio-conjugation research, namely synthesis and applications of: Lipidated fluorescent peptides, carbohydrate oxime-azide linkers and N-aryl O-R2 oxyamine derivatives. Lipidated...

  16. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

    International Nuclear Information System (INIS)

    Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

    2005-01-01

    We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

  17. Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

    Science.gov (United States)

    Gozu, Shin-ichiro; Mozume, Teruo

    2018-05-01

    InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.

  18. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    International Nuclear Information System (INIS)

    Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

    2014-01-01

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

  19. When is an INP not an INP?

    Science.gov (United States)

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  20. Composition-dependent trap distributions in CdSe and InP quantum dots probed using photoluminescence blinking dynamics.

    Science.gov (United States)

    Chung, Heejae; Cho, Kyung-Sang; Koh, Weon-Kyu; Kim, Dongho; Kim, Jiwon

    2016-07-21

    Although Group II-VI quantum dots (QDs) have attracted much attention due to their wide range of applications in QD-based devices, the presence of toxic ions in II-VI QDs raises environmental concerns. To fulfill the demands of nontoxic QDs, synthetic routes for III-V QDs have been developed. However, only a few comparative analyses on optical properties of III-V QDs have been performed. In this study, the composition-related energetic trap distributions have been explored by using three different types of core/multishell QDs: CdSe-CdS (CdSe/CdS/ZnS), InP-ZnSe (InP/ZnSe/ZnS), and InP-GaP (InP/GaP/ZnS). It was shown that CdSe-CdS QDs have much larger trap densities than InP-shell QDs at higher energy states (at least 1Eg (band gap energy) above the lowest conduction band edge) based on probability density plots and Auger ionization efficiencies which are determined by analyses of photoluminescence blinking dynamics. This result suggests that the composition of encapsulated QDs is closely associated with the charge trapping processes, and also provides an insight into the development of more environmentally friendly QD-based devices.

  1. Cell-permeable Ln(III) chelate-functionalized InP quantum dots as multimodal imaging agents.

    Science.gov (United States)

    Stasiuk, Graeme J; Tamang, Sudarsan; Imbert, Daniel; Poillot, Cathy; Giardiello, Marco; Tisseyre, Céline; Barbier, Emmanuel L; Fries, Pascal Henry; de Waard, Michel; Reiss, Peter; Mazzanti, Marinella

    2011-10-25

    Quantum dots (QDs) are ideal scaffolds for the development of multimodal imaging agents, but their application in clinical diagnostics is limited by the toxicity of classical CdSe QDs. A new bimodal MRI/optical nanosized contrast agent with high gadolinium payload has been prepared through direct covalent attachment of up to 80 Gd(III) chelates on fluorescent nontoxic InP/ZnS QDs. It shows a high relaxivity of 900 mM(-1) s(-1) (13 mM(-1 )s(-1) per Gd ion) at 35 MHz (0.81 T) and 298 K, while the bright luminescence of the QDs is preserved. Eu(III) and Tb(III) chelates were also successfully grafted to the InP/ZnS QDs. The absence of energy transfer between the QD and lanthanide emitting centers results in a multicolor system. Using this convenient direct grafting strategy additional targeting ligands can be included on the QD. Here a cell-penetrating peptide has been co-grafted in a one-pot reaction to afford a cell-permeable multimodal multimeric MRI contrast agent that reports cellular localization by fluorescence and provides high relaxivity and increased tissue retention with respect to commercial contrast agents.

  2. Cytotoxicity assessment of functionalized CdSe, CdTe and InP quantum dots in two human cancer cell models

    International Nuclear Information System (INIS)

    Liu, Jing; Hu, Rui; Liu, Jianwei; Zhang, Butian; Wang, Yucheng; Liu, Xin; Law, Wing-Cheung; Liu, Liwei; Ye, Ling; Yong, Ken-Tye

    2015-01-01

    The toxicity of quantum dots (QDs) has been extensively studied over the past decade. Some common factors that originate the QD toxicity include releasing of heavy metal ions from degraded QDs and the generation of reactive oxygen species on the QD surface. In addition to these factors, we should also carefully examine other potential QD toxicity causes that will play crucial roles in impacting the overall biological system. In this contribution, we have performed cytotoxicity assessment of four types of QD formulations in two different human cancer cell models. The four types of QD formulations, namely, mercaptopropionic acid modified CdSe/CdS/ZnS QDs (CdSe-MPA), PEGylated phospholipid encapsulated CdSe/CdS/ZnS QDs (CdSe-Phos), PEGylated phospholipid encapsulated InP/ZnS QDs (InP-Phos) and Pluronic F127 encapsulated CdTe/ZnS QDs (CdTe-F127), are representatives for the commonly used QD formulations in biomedical applications. Both the core materials and the surface modifications have been taken into consideration as the key factors for the cytotoxicity assessment. Through side-by-side comparison and careful evaluations, we have found that the toxicity of QDs does not solely depend on a single factor in initiating the toxicity in biological system but rather it depends on a combination of elements from the particle formulations. More importantly, our toxicity assessment shows different cytotoxicity trend for all the prepared formulations tested on gastric adenocarcinoma (BGC-823) and neuroblastoma (SH-SY5Y) cell lines. We have further proposed that the cellular uptake of these nanocrystals plays an important role in determining the final faith of the toxicity impact of the formulation. The result here suggests that the toxicity of QDs is rather complex and it cannot be generalized under a few assumptions reported previously. We suggest that one have to evaluate the QD toxicity on a case to case basis and this indicates that standard procedures and comprehensive

  3. Cytotoxicity assessment of functionalized CdSe, CdTe and InP quantum dots in two human cancer cell models

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Hu, Rui [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, Jianwei [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Zhang, Butian; Wang, Yucheng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, Xin [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Law, Wing-Cheung [Department of Industrial and System Engineering, The Hang Kong Polytechnic University, Hung Hom (Hong Kong); Liu, Liwei [School of Science, Changchun University of Science and Technology, Changchun 130022 (China); Ye, Ling, E-mail: lye_301@163.com [Institute of Gerontology and Geriatrics & Beijing Key Lab of Aging and Geriatrics, Chinese PLA General Hospital, Beijing 100853 (China); Yong, Ken-Tye, E-mail: ktyong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2015-12-01

    The toxicity of quantum dots (QDs) has been extensively studied over the past decade. Some common factors that originate the QD toxicity include releasing of heavy metal ions from degraded QDs and the generation of reactive oxygen species on the QD surface. In addition to these factors, we should also carefully examine other potential QD toxicity causes that will play crucial roles in impacting the overall biological system. In this contribution, we have performed cytotoxicity assessment of four types of QD formulations in two different human cancer cell models. The four types of QD formulations, namely, mercaptopropionic acid modified CdSe/CdS/ZnS QDs (CdSe-MPA), PEGylated phospholipid encapsulated CdSe/CdS/ZnS QDs (CdSe-Phos), PEGylated phospholipid encapsulated InP/ZnS QDs (InP-Phos) and Pluronic F127 encapsulated CdTe/ZnS QDs (CdTe-F127), are representatives for the commonly used QD formulations in biomedical applications. Both the core materials and the surface modifications have been taken into consideration as the key factors for the cytotoxicity assessment. Through side-by-side comparison and careful evaluations, we have found that the toxicity of QDs does not solely depend on a single factor in initiating the toxicity in biological system but rather it depends on a combination of elements from the particle formulations. More importantly, our toxicity assessment shows different cytotoxicity trend for all the prepared formulations tested on gastric adenocarcinoma (BGC-823) and neuroblastoma (SH-SY5Y) cell lines. We have further proposed that the cellular uptake of these nanocrystals plays an important role in determining the final faith of the toxicity impact of the formulation. The result here suggests that the toxicity of QDs is rather complex and it cannot be generalized under a few assumptions reported previously. We suggest that one have to evaluate the QD toxicity on a case to case basis and this indicates that standard procedures and comprehensive

  4. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2014-01-01

    . In order to extract the QD benefits for the longer telecommunication wavelength range the technology of QD fabrication should be developed for InP based materials. In our work, we take advantage of both QD fabrication methods Stranski-Krastanow (SK) and selective area growth (SAG) employing block copolymer...

  5. Characterization of InP and InGaN quantum dots for single photon sources and AlGaInAs quantum dots in intermediate band solar cells

    International Nuclear Information System (INIS)

    Kremling, Stefan

    2014-01-01

    This thesis describes the characterization of semiconductor quantum dots (QDs) in different material systems with potential applications as single photon emitters or intermediate band solar cells. All investigations were carried out by means of optical spectroscopy methods. First, the theoretical background regarding the physics of QDs with respect to their electronic structure and their associated statistical properties are presented. Especially peculiarities of photon statistics of light are explained. Moreover, a closer look at the physics of solar cells and the respective carrier transport is given. Then experimental methods, which were used to characterize the QD-samples, are briefly explained. First, the components and techniques of optical spectroscopy for the study of individual, isolated QDs are described. Second, different experimental technologies for the characterization of solar cells are discussed. The method for measuring the two-photon-absorption process is explained in detail. The section of experimental results begins with studies of individual and spectrally isolated InP QD. Due to the low surface density of one QD per μm 2 , it is possible to study the physical properties of individual QDs optically without additional lateral sample structuring. Based on power and polarization dependent measurements, various luminescence peaks of a single QD were associated with different exciton states. In addition, the QDs were tested subject to an external magnetic field in a Faraday configuration. Finally, the temporal photon statistics of a single QD was tested using autocorrelation measurement. Afterwards, InP QDs manufactured by cyclic material deposition with growth interruptions were investigated by means of PL spectroscopy. Based on excitation power and time-resolved measurements on the QD ensemble, a bimodal QD distribution of type-I and type-II band alignment was observed. In addition, different exciton states were identified on spectrally isolated

  6. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    International Nuclear Information System (INIS)

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Ionospheric research at INPE

    International Nuclear Information System (INIS)

    Abdu, M.A.

    1984-01-01

    Ionosphere investigations at INPE are mainly concerned with the problems of equatorial and tropical ionospheres and their electrodynamic coupling with the high latitude ionosphere. Present research objectives include investigations in the following specific areas: equatorial ionospheric plasma dynamics; plasma irregularity generation and morphology, and effects on space borne radar operations; ionospheric response to disturbance dynamo and magnetospheric electric fields; aeronomic effcts of charged particle precipitation in the magnetic anomaly, etc. These problems are being investigated using experimental datacollected from ionospheric diagnostic instruments being operated at different locations in Brazil. These instruments are: ionosondes, VHF electronic polarimeters, L-band scintillation receivers, airglow photometers, riometers and VLF receivers. A brief summary of the research activities and some recnet results will be presented. (Author) [pt

  8. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    International Nuclear Information System (INIS)

    Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-01-01

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

  9. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Maryński, A.; Sĕk, G.; Musiał, A.; Andrzejewski, J.; Misiewicz, J. [Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Gilfert, C.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132 Kassel (Germany); Capua, A.; Karni, O.; Gready, D.; Eisenstein, G. [Department of Electrical Engineering, Technion, Haifa 32000 (Israel); Atiya, G.; Kaplan, W. D. [Department of Materials Science and Engineering, Technion, Haifa 32000 (Israel); Kölling, S. [Fraunhofer Institute for Photonic Microsystems, Center for Nanoelectronic Technologies, Königsbrücker Straße 180, D-01099 Dresden (Germany)

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  10. Development of Bioorthogonal Reactions and Their Applications in Bioconjugation

    Directory of Open Access Journals (Sweden)

    Mengmeng Zheng

    2015-02-01

    Full Text Available Biomolecule labeling using chemical probes with specific biological activities has played important roles for the elucidation of complicated biological processes. Selective bioconjugation strategies are highly-demanded in the construction of various small-molecule probes to explore complex biological systems. Bioorthogonal reactions that undergo fast and selective ligation under bio-compatible conditions have found diverse applications in the development of new bioconjugation strategies. The development of new bioorthogonal reactions in the past decade has been summarized with comments on their potentials as bioconjugation method in the construction of various biological probes for investigating their target biomolecules. For the applications of bioorthogonal reactions in the site-selective biomolecule conjugation, examples have been presented on the bioconjugation of protein, glycan, nucleic acids and lipids.

  11. Multicomponent Reactions in Ligation and Bioconjugation Chemistry.

    Science.gov (United States)

    Reguera, Leslie; Méndez, Yanira; Humpierre, Ana R; Valdés, Oscar; Rivera, Daniel G

    2018-05-25

    Multicomponent reactions (MCRs) encompass an exciting class of chemical transformations that have proven success in almost all fields of synthetic organic chemistry. These convergent procedures incorporate three or more reactants into a final product in one pot, thus combining high levels of complexity and diversity generation with low synthetic cost. Striking applications of these processes are found in heterocycle, peptidomimetic, and natural product syntheses. However, their potential in the preparation of large macro- and biomolecular constructs has been realized just recently. This Account describes the most relevant results of our group in the utilization of MCRs for ligation/conjugation of biomolecules along with significant contributions from other laboratories that validate the utility of this special class of bioconjugation process. Thus, MCRs have proven to be efficient in the ligation of lipids to peptides and oligosaccharides as well as the ligation of steroids, carbohydrates, and fluorescent and affinity tags to peptides and proteins. In the field of glycolipids, we highlight the power of isocyanide-based MCRs with the one-pot double lipidation of glycan fragments functionalized as either the carboxylic acid or amine. In peptide chemistry, the versatility of the multicomponent ligation strategy is demonstrated in both solution-phase lipidation protocols and solid-phase procedures enabling the simultaneous lipidation and biotinylation of peptides. In addition, we show that MCRs are powerful methods for synchronized lipidation/labeling and macrocyclization of peptides, thus accomplishing in one step what usually requires long sequences. In the realm of protein bioconjugation, MCRs have also proven to be effective in labeling, site-selective modification, immobilization, and glycoconjugation processes. For example, we illustrate a successful application of multicomponent polysaccharide-protein conjugation with the preparation of multivalent

  12. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gladysiewicz, M.; Wartak, M. S. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  13. Cytotoxicity assessment of functionalized CdSe, CdTe and InP quantum dots in two human cancer cell models.

    Science.gov (United States)

    Liu, Jing; Hu, Rui; Liu, Jianwei; Zhang, Butian; Wang, Yucheng; Liu, Xin; Law, Wing-Cheung; Liu, Liwei; Ye, Ling; Yong, Ken-Tye

    2015-12-01

    The toxicity of quantum dots (QDs) has been extensively studied over the past decade. Some common factors that originate the QD toxicity include releasing of heavy metal ions from degraded QDs and the generation of reactive oxygen species on the QD surface. In addition to these factors, we should also carefully examine other potential QD toxicity causes that will play crucial roles in impacting the overall biological system. In this contribution, we have performed cytotoxicity assessment of four types of QD formulations in two different human cancer cell models. The four types of QD formulations, namely, mercaptopropionic acid modified CdSe/CdS/ZnS QDs (CdSe-MPA), PEGylated phospholipid encapsulated CdSe/CdS/ZnS QDs (CdSe-Phos), PEGylated phospholipid encapsulated InP/ZnS QDs (InP-Phos) and Pluronic F127 encapsulated CdTe/ZnS QDs (CdTe-F127), are representatives for the commonly used QD formulations in biomedical applications. Both the core materials and the surface modifications have been taken into consideration as the key factors for the cytotoxicity assessment. Through side-by-side comparison and careful evaluations, we have found that the toxicity of QDs does not solely depend on a single factor in initiating the toxicity in biological system but rather it depends on a combination of elements from the particle formulations. More importantly, our toxicity assessment shows different cytotoxicity trend for all the prepared formulations tested on gastric adenocarcinoma (BGC-823) and neuroblastoma (SH-SY5Y) cell lines. We have further proposed that the cellular uptake of these nanocrystals plays an important role in determining the final faith of the toxicity impact of the formulation. The result here suggests that the toxicity of QDs is rather complex and it cannot be generalized under a few assumptions reported previously. We suggest that one have to evaluate the QD toxicity on a case to case basis and this indicates that standard procedures and comprehensive

  14. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    Science.gov (United States)

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  15. Upper atmosphere research at INPE

    International Nuclear Information System (INIS)

    Clemesha, B.R.

    1984-01-01

    Upper atmosphere research at INPE is mainly concerned with the chemistry and dynamics of the stratosphere, upper mesosphere and lower thermosphere, and the middle thermosphere. Experimental work includes lidar observations of the stratospheric aerosol, measurements of stratospheric ozone by Dobson spectrophotometers and by balloon and rocket-borne sondes, lidar measurements of atmospheric sodium, and photometric observations of O, O 2 , OH and Na emissions, including interferrometric measurements of the OI6300 emission for the purpose of determing thermospheric winds and temperature. The airglow observations also include measurements of a number of emissions produced by the precipitation of energetic neutral particles generated by charge exchange in the ring current. Some recent results of INPE's upper atmosphere program are presented. (Author) [pt

  16. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

  17. Amine-selective bioconjugation using arene diazonium salts.

    Science.gov (United States)

    Diethelm, Stefan; Schafroth, Michael A; Carreira, Erick M

    2014-08-01

    A novel bioconjugation strategy is presented that relies on the coupling of diazonium terephthalates with amines in proteins. The diazonium captures the amine while the vicinal ester locks it through cyclization, ensuring no reversibility. The reaction is highly efficient and proceeds under mild conditions and short reaction times. Densely functionalized, complex natural products were directly coupled to proteins using low concentrations of coupling partners.

  18. Click-generated triazole based ferrocene-carbohydrate bioconjugates

    Indian Academy of Sciences (India)

    carbohydrate bioconjugates, 2,. C46H56O20N6Fe and 3, C28H33O10N3Fe were designed and synthesized in good yields. Both the compounds,. 2 and 3, behave as very selective and sensitive chromogenic and electrochemical chemosensor for Cu2+ ...

  19. General Dialdehyde Click Chemistry for Amine Bioconjugation.

    Science.gov (United States)

    Elahipanah, Sina; O'Brien, Paul J; Rogozhnikov, Dmitry; Yousaf, Muhammad N

    2017-05-17

    -conjugation strategy, we designed a straightforward scheme to synthesize a suite of dialdehyde reagents. The dialdehyde molecules were used for applications in cell-surface engineering and for tailoring surfaces for material science applications. We anticipate the broad utility of the general dialdehyde click chemistry to primary amines in all areas of chemical research, ranging from polymers and bioconjugation to material science and nanoscience.

  20. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Science.gov (United States)

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  1. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

    Science.gov (United States)

    Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

    2014-01-08

    Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

  2. Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

    Science.gov (United States)

    Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

    2013-02-26

    The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

  3. Linkable thiocarbamoylbenzamidines as ligands for bioconjugation of Rhenium and Technetium; Kopplungsfaehige Thiocarbamoylbenzamidine als Liganden zur Biokonjugation von Rhenium und Technetium

    Energy Technology Data Exchange (ETDEWEB)

    Castillo Gomez, Juan Daniel

    2015-04-27

    Bioconjugation reactions with Rhenium and Technetium are of high importance for the development of novel radiopharmaceuticals for nuclear medicine. In this thesis the possibilities for bioconjugation using linkable Thiocarmbamoylbenzamidines as ligands for the complexation of Rhenium and Technetium were examined.

  4. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    Science.gov (United States)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  5. Heteroepitaxially grown InP solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

    1990-01-01

    Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

  6. Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

    Science.gov (United States)

    Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

    2016-09-06

    This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

  7. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  8. Segregation of antimony in InP in MOVPE

    International Nuclear Information System (INIS)

    Weeke, Stefan

    2008-01-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  9. Quantum Nanostructures by Droplet Epitaxy

    OpenAIRE

    Somsak Panyakeow

    2009-01-01

    Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

  10. Budker INP in the LHC Machine (2)

    CERN Multimedia

    2001-01-01

    The main BINP contributions to the LHC machine are magnets for transfer lines (26 MCHF) and bus- bar sets (23 MCHF). Budker INP is also responsible for construction of some other LHC magnets and vacuum parts. In total, the contribution to the LHC machine will reach about 90 MCHF.

  11. Bioconjugated iron oxide nanocubes: synthesis, functionalization, and vectorization.

    Science.gov (United States)

    Wortmann, Laura; Ilyas, Shaista; Niznansky, Daniel; Valldor, Martin; Arroub, Karim; Berger, Nadja; Rahme, Kamil; Holmes, Justin; Mathur, Sanjay

    2014-10-08

    A facile bottom-up approach for the synthesis of inorganic/organic bioconjugated nanoprobes based on iron oxide nanocubes as the core with a nanometric silica shell is demonstrated. Surface coating and functionalization protocols developed in this work offered good control over the shell thickness (8-40 nm) and enabled biovectorization of SiO2@Fe3O4 core-shell structures by covalent attachment of folic acid (FA) as a targeting unit for cellular uptake. The successful immobilization of folic acid was investigated both quantitatively (TGA, EA, XPS) and qualitatively (AT-IR, UV-vis, ζ-potential). Additionally, the magnetic behavior of the nanocomposites was monitored after each functionalization step. Cell viability studies confirmed low cytotoxicity of FA@SiO2@Fe3O4 conjugates, which makes them promising nanoprobes for targeted internalization by cells and their imaging.

  12. Photochemical Synthesis of the Bioconjugate Folic Acid-Gold Nanoparticles

    DEFF Research Database (Denmark)

    León, John Jairo Castillo; Bertel, Linda; Páez-Mozo, Edgar

    2013-01-01

    In this paper we present a rapid and simple onepot method to obtain gold nanoparticles functionalized with folic acid using a photochemistry method. The bioconjugate folic acid-gold nanoparticle was generated in one step using a photo-reduction method, mixing hydrogen tetrachloroaurate with folic...... at 4°C prolongs the stability of folic acid-gold nanoparticle suspensions to up to 26 days. Ultraviolet visible and Fourier transform infrared spectroscopy showed a surface plasmon band of around 534nm and fluorescence spectroscopy exhibited a quenching effect on gold nanoparticles in the fluorescence...... emission of folic acid and thus confirmed the conjugation of folic acid to the surface of gold nanoparticles. In this study we demonstrate the use of a photochemistry method to obtain folic acid-gold nanoparticles in a simple and rapid way without the use of surfactants and long reaction times...

  13. Biodistribution imaging of a paclitaxel-hyaluronan bioconjugate

    Energy Technology Data Exchange (ETDEWEB)

    Banzato, Alessandra; Rondina, Maria [Department of Oncology and Surgical Sciences, University of Padua, I-35128 Padova (Italy); Melendez-Alafort, Laura; Zangoni, Elena; Nadali, Anna [Department of Pharmaceutical Sciences, University of Padua, Padova (Italy); Renier, Davide [Fidia Farmaceutici, Abano Terme (Italy); Moschini, Giuliano [Department of Physics, University of Padua, Padova (Italy); Mazzi, Ulderico [Department of Pharmaceutical Sciences, University of Padua, Padova (Italy); Zanovello, Paola [Department of Oncology and Surgical Sciences, University of Padua, I-35128 Padova (Italy); Istituto Oncologico Veneto, IOV-IRCCS, Padova (Italy); Rosato, Antonio [Department of Oncology and Surgical Sciences, University of Padua, I-35128 Padova (Italy); Istituto Oncologico Veneto, IOV-IRCCS, Padova (Italy)], E-mail: antonio.rosato@unipd.it

    2009-07-15

    Introduction: Gamma-ray detectors represent sensitive and noninvasive instruments to evaluate in vivo the metabolic trapping of radiopharmaceuticals. This study aimed to assess the imaging biodistribution of a [{sup 99m}Tc]-radiolabelled new prototype bioconjugate composed of paclitaxel linked to hyaluronan (ONCOFID-P). Methods: A small gamma camera providing high-resolution images was employed. Imaging of biodistribution following intravenous, intraperitoneal, intravesical and oral administration was carried out for a 2-h period in anesthetized mice receiving [{sup 99m}Tc]ONCOFID-P. At the end of the observation time, radioactivity in organs was directly measured. As a control, groups of mice were treated with free [{sup 3}H]paclitaxel given according to the same administration routes, and organ biodistribution of the drug was assessed after 2 h. Results: Intravenous inoculation of [{sup 99m}Tc]ONCOFID-P was followed by a rapid and strong liver uptake. In fact, almost 80% of the imaging signal was detected in this organ 10 min after injection and such value remained constant thereafter, thus indicating that the bioconjugate given through the intravenous route could be well suited to targeting primary or metastatic liver neoplasias. Imaging of the bladder, abdomen and gastrointestinal tract after local administration disclosed that the radiolabelled compound remained confined to the cavities, suggesting a potential regional application for transitional bladder cell carcinomas, ovarian cancers and gastric tumors, respectively. Free [{sup 3}H]paclitaxel biodistribution profoundly differed from that of [{sup 99m}Tc]ONCOFID-P. Conclusions: Conjugation of drugs with polymers results in new chemical entities characterized by a modified biodistribution pattern. Therefore, preclinical studies based on imaging analysis of such new compounds can suggest novel therapeutic applications.

  14. Thermal diffusion in nanostructured porous InP

    International Nuclear Information System (INIS)

    Srinivasan, R.; Ramachandran, K.

    2008-01-01

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studies by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles. (author)

  15. High resistivity in InP by helium bombardment

    International Nuclear Information System (INIS)

    Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

    1984-01-01

    Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

  16. InP Solar Cells and their Flight Experiments

    OpenAIRE

    TAKAHASHI, Keiji; YAMAGUCHI, Masafumi; TAKAMOTO, Tatsuya; IKEGAMI, Shingo; OHNISHI, Akira; HAYASHI, Tomonao; USHIROKAWA, Akio; KOHBATA, Masahiko; ARAI, Hidetoshi; HASHIMOTO, Katsumasa; ORH, Takeshi; OKAZAKI, Hitoshi; TAKAMURA, Hideto; URA, Mitsuru; OHMORI, Masamichi

    1992-01-01

    We have developed high-efficiency homojunction 1 cm × 2 cm InP space solar cells by diffusing In_2S_3 into p type InP substrates and investigated their fundamental characteristics such as electrical and mechnical characteristics and thermal properties. On the radiation resistant mechanism of InP cells, we have studied InP cells fabricated at NTT Laboratories and found superior properties such as room temperture annealing and minority carrier injection enhanced annealing phenomena for radiatio...

  17. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  18. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  19. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    Energy Technology Data Exchange (ETDEWEB)

    Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  20. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Science.gov (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  1. Coumarin-gold nanoparticle bioconjugates: preparation, antioxidant, and cytotoxic effects against MCF-7 breast cancer cells

    Science.gov (United States)

    Mahendran, Gokila; Ponnuchamy, Kumar

    2018-05-01

    In recent, the conjugation of gold nanoparticles (AuNPs) with biomolecules has shown great potential especially in disease diagnostics and treatment. Taking this in account, we report the methodology involved in the conjugation of coumarin onto the surface of citrate-capped AuNPs by a simple in situ method. Herein, we systematically performed UV-Vis spectroscopy, transmission electron microscopy, dynamic light scattering, and zeta potential measurements to characterize citrate-capped AuNPs and bioconjugates. Our results demonstrate in-depth surface chemistry of bioconjugates with improved surface plasmon resonance (529 nm), morphology (near spherical shape), hydrodynamic diameter (25.3 nm) as well as surface charge (- 35 mV). Furthermore, the bioconjugates displayed dose-dependent response in scavenging free radicals and exhibited cytotoxicity against MCF-7 breast cancer cell lines. In addition, phase-contrast microscopic analysis revealed that bioconjugates promote apoptosis in cancer cells in a time-dependent manner. Overall, we ascertain the fact that this kind of bioconjugation of AuNPs with coumarin further enhances the efficacy of inorganic nanomaterials and thus make them a better bio-therapeutic candidate.

  2. Detection of Salmonella typhi utilizing bioconjugated fluorescent polymeric nanoparticles

    International Nuclear Information System (INIS)

    Jain, Swati; Chattopadhyay, Sruti; Jackeray, Richa; Abid, Zainul; Singh, Harpal

    2016-01-01

    Present work demonstrates effective utilization of functionalized polymeric fluorescent nanoparticles as biosensing probe for the detection of Salmonella typhi bacteria on modified polycarbonate (PC) filters in about 3 h. Antibody modified-PC membranes were incubated with contaminated bacterial water for selective capturing which were detected by synthesized novel bioconjugate probe. Core–shell architecture of polymeric nanoparticles endows them with aqueous stabilization and keto-enolic functionalities making them usable for covalently linking S. typhi antibodies without any crosslinker or activator. Bradford analysis revealed that one nanoparticle has an average of 3.51 × 10"−"1"9 g or 21 × 10"4 bound S. typhi Ab molecules. Analysis of the regions of interest (ROI) in fluorescent micrographs of modified fluoroimmunoassay showed higher detection sensitivity of 5 × 10"2 cells/mL due to signal amplification unlike conventional naked dye FITC-Ab conjugate. Fluorescence of pyrene dye remained same on immobilization of biomolecules and nanoparticles showed stable fluorescent intensity under prolong exposure to laser owing to protective polymeric layer allowing accurate identification of bacteria. Surface-functionalized PC matrix and fluorescent label NPs permit covalent interactions among biomolecules enhancing signal acquisitions showing higher detection efficiency as compared to conventional microtiter plate-based system. Our novel immunoassay has the potential to be explored as rapid detection method for identifying S. typhi contaminations in water.Graphical Abstract

  3. Detection of Salmonella typhi utilizing bioconjugated fluorescent polymeric nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Swati, E-mail: swatijain.iitd@gmail.com; Chattopadhyay, Sruti, E-mail: sruticiitd@gmail.com; Jackeray, Richa; Abid, Zainul; Singh, Harpal, E-mail: harpal2000@yahoo.com [Centre for Biomedical Engineering, Indian Institute of Technology-Delhi (India)

    2016-05-15

    Present work demonstrates effective utilization of functionalized polymeric fluorescent nanoparticles as biosensing probe for the detection of Salmonella typhi bacteria on modified polycarbonate (PC) filters in about 3 h. Antibody modified-PC membranes were incubated with contaminated bacterial water for selective capturing which were detected by synthesized novel bioconjugate probe. Core–shell architecture of polymeric nanoparticles endows them with aqueous stabilization and keto-enolic functionalities making them usable for covalently linking S. typhi antibodies without any crosslinker or activator. Bradford analysis revealed that one nanoparticle has an average of 3.51 × 10{sup −19} g or 21 × 10{sup 4} bound S. typhi Ab molecules. Analysis of the regions of interest (ROI) in fluorescent micrographs of modified fluoroimmunoassay showed higher detection sensitivity of 5 × 10{sup 2} cells/mL due to signal amplification unlike conventional naked dye FITC-Ab conjugate. Fluorescence of pyrene dye remained same on immobilization of biomolecules and nanoparticles showed stable fluorescent intensity under prolong exposure to laser owing to protective polymeric layer allowing accurate identification of bacteria. Surface-functionalized PC matrix and fluorescent label NPs permit covalent interactions among biomolecules enhancing signal acquisitions showing higher detection efficiency as compared to conventional microtiter plate-based system. Our novel immunoassay has the potential to be explored as rapid detection method for identifying S. typhi contaminations in water.Graphical Abstract.

  4. Indium phosphide (InP) for optical interconnects

    NARCIS (Netherlands)

    Lebby, M.; Ristic, S.; Calabretta, N.; Stabile, R.; Tekin, T.; Pitwon, R.; Håkansson, A.; Pleros, N.

    2016-01-01

    We present InP as the incumbent technology for data center transceiver and switching optics. We review the most popular InP monolithic integration approaches in light of photonic integration being recognized as an increasingly important technology for data center optics. We present Multi-Guide

  5. Peptides for functionalization of InP semiconductors.

    Science.gov (United States)

    Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

    2009-09-15

    The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

  6. Thermal diffusion in nanostructured porous InP

    Indian Academy of Sciences (India)

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy ...

  7. Electronic effects in emission of core/shell CdSe/ZnS quantum dots conjugated to anti-Interleukin 10 antibodies

    Energy Technology Data Exchange (ETDEWEB)

    Quintos Vazquez, A.L. [ESIME—Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM–Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Casas Espinola, J.L. [ESFM–Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Jaramillo Gómez, J.A.; Douda, J. [UPIITA–Instituto Politécnico Nacional, México D. F. 07320, México (Mexico)

    2013-11-15

    The paper presents a comparative study of the photoluminescence (PL) and Raman scattering spectra of the core–shell CdSe/ZnS quantum dots (QDs) in nonconjugated states and after the conjugation to anti-Interleukin 10 antibodies (anti-IL10). All optical measurements are performed on the dried droplets of the original solution of nonconjugated and bioconjugated QDs located on the Si substrate. CdSe/ZnS QDs with emission at 605 and 655 nm have been used. PL spectra of nonconjugated QDs are characterized by one Gaussian shape PL band related to the exciton emission in the CdSe core. PL spectra of bioconjugated QDs have changed essentially: the core PL band shifts into the high energy spectral range (“blue” sift) and becomes asymmetric. Additionally two new PL bands appear. A set of physical reasons has been proposed for the “blue” shift explanation for the core PL band in bioconjugated QDs. Then Raman scattering spectra have been studied with the aim to analyze the impact of elastic strains or the oxidation process at the QD bioconjugation. The variation of PL spectra versus excitation light intensities has been studied to analyze the exciton emission via excited states in QDs. Finally the PL spectrum transformation for the core emission in bioconjugated QDs has been attributed to the electronic quantum confined effects stimulated by the electric charges of bioconjugated antibodies. -- Highlights: • The conjugation of CdSe/ZnS QDs to anti-Interleukin 10 antibodies has been studied. • PL shift to high energy is detected in bioconjugated CdSe/ZnS QDs. • The PL energy shift in bioconjugated QDs is stimulated by antibody electric charges. • The reasons of PL energy shift in bioconjugated QDs have been discussed.

  8. Quantum

    CERN Document Server

    Al-Khalili, Jim

    2003-01-01

    In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.

  9. Exciton in type-II quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Sierra-Ortega, J; Escorcia, R A [Universidad del Magdalena, A. A. 731, Santa Marta (Colombia); Mikhailov, I D, E-mail: jsierraortega@gmail.co [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia)

    2009-05-01

    We study the quantum-size effect and the influence of the external magnetic field on the exciton ground state energy in the type-II InP quantum disk, lens and pyramid deposited on a wetting layer and embedded in a GaInP matrix. We show that the charge distribution over and below quantum dot and wetting layer induced by trapped exciton strongly depends on the quantum dot morphology and the strength of the magnetic field.

  10. Advances in targeted delivery of small interfering RNA using simple bioconjugates

    DEFF Research Database (Denmark)

    Nielsen, Christoffer; Kjems, Jørgen; Sorensen, Kristine Rothaus

    2014-01-01

    with a targeting moiety, in a simple bioconjugate construct. We discuss the use of different types of targeting moieties, as well as the different conjugation strategies employed for preparing these bioconjugate constructs that deliver the siRNA to target cells. We focus especially on the in-built or passive......Introduction: Development of drugs based on RNA interference by small interfering RNA (siRNA) has been progressing slowly due to a number of challenges associated with the in vivo behavior of siRNA. A central problem is controlling siRNA delivery to specific cell types. Here, we review existing...... literature on one type of strategy for solving the issue of cell-specific delivery of siRNA, namely delivering the siRNA as part of simple bioconjugate constructs. Areas covered: This review presents current experience from strategies aimed at targeting siRNA to specific cell types, by associating the siRNA...

  11. Bio-Conjugated Polycaprolactone Membranes: A Novel Wound Dressing

    Directory of Open Access Journals (Sweden)

    Elijah Zhengyang Cai

    2014-11-01

    Full Text Available BackgroundThe combination of polycaprolactone and hyaluronic acid creates an ideal environment for wound healing. Hyaluronic acid maintains a moist wound environment and accelerates the in-growth of granulation tissue. Polycaprolactone has excellent mechanical strength, limits inflammation and is biocompatible. This study evaluates the safety and efficacy of bio-conjugated polycaprolactone membranes (BPM as a wound dressing.Methods16 New Zealand white rabbits were sedated and local anaesthesia was administered. Two 3.0×3.0 cm full-thickness wounds were created on the dorsum of each rabbit, between the lowest rib and the pelvic bone. The wounds were dressed with either BPM (n=12 or Mepitel (n=12 (control, a polyamide-silicon wound dressing. These were evaluated macroscopically on the 7th, 14th, 21st, and 28th postoperative days for granulation, re-epithelialization, infection, and wound size, and histologically for epidermal and dermal regeneration.ResultsBoth groups showed a comparable extent of granulation and re-epithelialization. No signs of infection were observed. There was no significant difference (P>0.05 in wound size between the two groups. BPM (n=6: 8.33 cm2, 4.90 cm2, 3.12 cm2, 1.84 cm2; Mepitel (n=6: 10.29 cm2, 5.53 cm2, 3.63 cm2, 2.02 cm2; at the 7th, 14th, 21st, and 28th postoperative days. The extents of epidermal and dermal regeneration were comparable between the two groups.ConclusionsBPM is comparable to Mepitel as a safe and efficacious wound dressing.

  12. High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

    Science.gov (United States)

    Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

    2014-06-11

    The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

  13. Epitaxial growth of InP on SI by MOCVD

    International Nuclear Information System (INIS)

    Konushi, F.; Seki, A.; Kudo, J.; Sato, H.; Kakimoto, S.; Fukushima, T.; Kubota, Y.; Koba, M.

    1988-01-01

    The authors have studied the heteroepitaxial growth of InP on large diameter Si substrates using MOCVD. A new MOCVD system with four inch wafer size capability was utilized in the growth. Single domain InP films have been successfully grown on four inch Si substrates by using a new heterostructure with a thin GaAs intermediate layer. In this paper, the authors describe the crystalline quality and residual stress of InP epilayers, estimated by etch pit density and x-ray diffraction, respectively. The authors also reports on the reduction of EPD by post-growth annealing

  14. Molecular beam epitaxial growth and characterization of zinc-blende ZnMgSe on InP (001)

    International Nuclear Information System (INIS)

    Sohel, Mohammad; Munoz, Martin; Tamargo, Maria C.

    2004-01-01

    High crystalline quality zinc-blende structure Zn (1-x) Mg x Se epitaxial layers were grown on InP (001) substrates by molecular beam epitaxy. Their band gap energies were determined as a function of Mg concentration and a linear dependence was observed. The band gap of the Zn (1-x) Mg x Se closely lattice matched to InP was found to be 3.59 eV at 77 K and the extrapolated value for zinc-blende MgSe was determined to be 3.74 eV. Quantum wells of Zn (1-x) Cd x Se with Zn (1-x) Mg x Se as the barrier layer were grown which exhibit near ultraviolet emission

  15. Development of bioconjugated dye-doped poly(styrene-co-maleimide) nanoparticles as a new bioprobe

    CSIR Research Space (South Africa)

    Swanepoel, A

    2015-02-01

    Full Text Available -1 Journal of Materials Chemistry B Development of bioconjugated dye-doped poly(styrene-co- maleimide) nanoparticles as a new bioprobe A. Swanepoel, I. du Preez, T. Mahlangu, A. Chetty and B. Klumperman Abstract Fluorescent dye-doped poly...

  16. Time-resolved photoluminescence measurements of InP/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Pham Thi Thuy; Ung Thi Dieu Thuy; Tran Thi Kim Chi; Le Quang Phuong; Nguyen Quang Liem [Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Li Liang; Reiss, Peter [CEA Grenoble, DSM/INAC/SPrAM (UMR 5819 CEA-CNRS-Universite Joseph Fourier)/LEMOH, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)], E-mail: liemnq@ims.vast.ac.vn

    2009-09-01

    This paper reports the results on the time-resolved photoluminescence study of InP/ZnS core/shell quantum dots. The ZnS shell played a decisive role to passivate imperfections on the surface of InP quantum dots, consequently giving rise to a strong enhancement of the photoluminescence from the InP core. Under appropriate excitation conditions, not only the emission from the InP core but also that from the ZnS shell was observed. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 600 - 700 nm region; while the ZnS shell showed emission in the blue region around 470 nm, which is interpreted as resulting from defects in ZnS.

  17. Progress in InP solar cell research

    International Nuclear Information System (INIS)

    Weinberg, I.; Brinker, D.J.

    1988-01-01

    Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators

  18. InP nanopore arrays for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

    2016-02-19

    We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm(-2)). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

  19. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  20. Collagen like peptide bioconjugates for targeted drug delivery applications

    Science.gov (United States)

    Luo, Tianzhi

    Collagen is the most abundant protein in mammals, and there has been long-standing interest in understanding and controlling collagen assembly in the design of new materials. Collagen-like peptides (CLP), also known as collagen-mimetic peptides (CMP), are short synthetic peptides which mimic the triple helical conformation of native collagens. In the past few decades, collagen like peptides and their conjugated hybrids have become a new class of biomaterials that possesses unique structures and properties. In addition to traditional applications of using CLPs to decipher the role of different amino acid residues and tripeptide motifs in stabilizing the collagen triple helix and mimicking collagen fibril formation, with the introduction of specific interactions including electrostatic interactions, pi-pi stacking interaction and metal-ligand coordination, a variety of artificial collagen-like peptides with well-defined sequences have been designed to create higher order assemblies with specific biological functions. The CLPs have also been widely used as bioactive domains or physical cross-linkers to fabricate hydrogels, which have shown potential to improve cell adhesion, proliferation and ECM macromolecule production. Despite this widespread use, the utilization of CLPs as domains in stimuli responsive bioconjugates represents a relatively new area for the development of functional polymeric materials. In this work, a new class of thermoresponsive diblock conjugates, containing collagen-like peptides and a thermoresponsive polymer, namely poly(diethylene glycol methyl ether methacrylate) (PDEGMEMA), is introduced. The CLP domain maintains its triple helix conformation after conjugation with the polymer. The engineered LCST of these conjugates has enabled temperature-induced assembly under aqueous conditions, at physiologically relevant temperatures, into well-defined vesicles with diameters of approximately 50-200 nm. The formation of nanostructures was driven by

  1. Effects of the electron beam on InP(100)

    International Nuclear Information System (INIS)

    Bouslama, M.; Jardin, C.; Ghamnia, M.

    1996-01-01

    Auger Electron Spectroscopy (AES) is performed to monitor the InP(100) surface evolution while it is irradiated by an electron beam of 5 KeV energy and 10 -3 A.cm -2 current density. A charge phenomenon appears during the irradiation of sputter-cleaned InP(100) by Ar + at low energy (500 eV). The deposition of phosphorus or antimony at room temperature on cleaned InP(100) is a good way of preventing this charging problem. This is also achieved by the growth of stoichiometric indium phosphide on InP(100) substrate, from an injection of phosphine and indium trimethyl whose ratio V/III is of 50, in a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. The electron beam even acts to stimulate oxidation of the stoichiometric InP(100) surface involving on the top layers, into a well defined oxide such as InPO 4 or a contamination layer composed of carbon and oxygen. The partial pressure in the spectrometer is about 10 -9 Torr. The incident electrons produce breaking of (In-P) chemical bonds so that the resulting indium takes part in the oxidation process. The phosphorus is thought to be desorbed from the surface. (author)

  2. Quantum Nanostructures by Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2009-02-01

    Full Text Available Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C. Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs could be realized. Potential applications of these quantum nanostructures are also discussed.

  3. Direct electrochemistry and electrocatalysis of a glucose oxidase-functionalized bioconjugate as a trace label for ultrasensitive detection of thrombin.

    Science.gov (United States)

    Bai, Lijuan; Yuan, Ruo; Chai, Yaqin; Yuan, Yali; Wang, Yan; Xie, Shunbi

    2012-11-18

    For the first time, a glucose oxidase-functionalized bioconjugate was prepared and served as a new trace label through its direct electrochemistry and electrocatalysis in a sandwich-type electrochemical aptasensor for ultrasensitive detection of thrombin.

  4. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

    Science.gov (United States)

    Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

    2017-10-11

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

  5. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    National Research Council Canada - National Science Library

    Pyshkin, Sergei

    1995-01-01

    Temperature-reduced MBE growth of group II-a fluorides onto InP( 100) surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data...

  6. Decarboxylative alkylation for site-selective bioconjugation of native proteins via oxidation potentials.

    Science.gov (United States)

    Bloom, Steven; Liu, Chun; Kölmel, Dominik K; Qiao, Jennifer X; Zhang, Yong; Poss, Michael A; Ewing, William R; MacMillan, David W C

    2018-02-01

    The advent of antibody-drug conjugates as pharmaceuticals has fuelled a need for reliable methods of site-selective protein modification that furnish homogeneous adducts. Although bioorthogonal methods that use engineered amino acids often provide an elegant solution to the question of selective functionalization, achieving homogeneity using native amino acids remains a challenge. Here, we explore visible-light-mediated single-electron transfer as a mechanism towards enabling site- and chemoselective bioconjugation. Specifically, we demonstrate the use of photoredox catalysis as a platform to selectivity wherein the discrepancy in oxidation potentials between internal versus C-terminal carboxylates can be exploited towards obtaining C-terminal functionalization exclusively. This oxidation potential-gated technology is amenable to endogenous peptides and has been successfully demonstrated on the protein insulin. As a fundamentally new approach to bioconjugation this methodology provides a blueprint toward the development of photoredox catalysis as a generic platform to target other redox-active side chains for native conjugation.

  7. In vivo molecular photoacoustic tomography of melanomas targeted by bioconjugated gold nanocages.

    Science.gov (United States)

    Kim, Chulhong; Cho, Eun Chul; Chen, Jingyi; Song, Kwang Hyun; Au, Leslie; Favazza, Christopher; Zhang, Qiang; Cobley, Claire M; Gao, Feng; Xia, Younan; Wang, Lihong V

    2010-08-24

    Early diagnosis, accurate staging, and image-guided resection of melanomas remain crucial clinical objectives for improving patient survival and treatment outcomes. Conventional techniques cannot meet this demand because of the low sensitivity, low specificity, poor spatial resolution, shallow penetration, and/or ionizing radiation. Here we overcome such limitations by combining high-resolution photoacoustic tomography (PAT) with extraordinarily optical absorbing gold nanocages (AuNCs). When bioconjugated with [Nle(4),D-Phe(7)]-alpha-melanocyte-stimulating hormone, the AuNCs can serve as a novel contrast agent for in vivo molecular PAT of melanomas with both exquisite sensitivity and high specificity. The bioconjugated AuNCs enhanced contrast approximately 300% more than the control, PEGylated AuNCs. The in vivo PAT quantification of the amount of AuNCs accumulated in melanomas was further validated with inductively coupled plasma mass spectrometry (ICP-MS).

  8. In vivo molecular photoacoustic tomography of melanomas targeted by bio-conjugated gold nanocages

    Science.gov (United States)

    Kim, Chulhong; Cho, Eun Chul; Chen, Jingyi; Song, Kwang Hyun; Au, Leslie; Favazza, Christopher; Zhang, Qiang; Cobley, Claire M.; Gao, Feng; Xia, Younan; Wang, Lihong V.

    2010-01-01

    Early diagnosis, accurate staging, and image-guided resection of melanomas remain crucial clinical objectives for improving patient survival and treatment outcomes. Conventional techniques cannot meet this demand because of the low sensitivity, low specificity, poor spatial resolution, shallow penetration, and/or ionizing radiation. Here we overcome such limitations by combining high-resolution photoacoustic tomography (PAT) with extraordinarily optical absorbing gold nanocages (AuNCs). When bio-conjugated with [Nle4,D-Phe7]-α-melanocyte-stimulating hormone, the AuNCs can serve as a novel contrast agent for in vivo molecular PAT of melanomas with both exquisite sensitivity and high specificity. The bio-conjugated AuNCs enhanced contrast ~300% more than the control, PEGylated AuNCs. The in vivo PAT quantification of the amount of AuNCs accumulated in melanomas was further validated with inductively coupled plasma mass spectrometry (ICP-MS). PMID:20731439

  9. Decarboxylative alkylation for site-selective bioconjugation of native proteins via oxidation potentials

    Science.gov (United States)

    Bloom, Steven; Liu, Chun; Kölmel, Dominik K.; Qiao, Jennifer X.; Zhang, Yong; Poss, Michael A.; Ewing, William R.; MacMillan, David W. C.

    2018-02-01

    The advent of antibody-drug conjugates as pharmaceuticals has fuelled a need for reliable methods of site-selective protein modification that furnish homogeneous adducts. Although bioorthogonal methods that use engineered amino acids often provide an elegant solution to the question of selective functionalization, achieving homogeneity using native amino acids remains a challenge. Here, we explore visible-light-mediated single-electron transfer as a mechanism towards enabling site- and chemoselective bioconjugation. Specifically, we demonstrate the use of photoredox catalysis as a platform to selectivity wherein the discrepancy in oxidation potentials between internal versus C-terminal carboxylates can be exploited towards obtaining C-terminal functionalization exclusively. This oxidation potential-gated technology is amenable to endogenous peptides and has been successfully demonstrated on the protein insulin. As a fundamentally new approach to bioconjugation this methodology provides a blueprint toward the development of photoredox catalysis as a generic platform to target other redox-active side chains for native conjugation.

  10. Interfacial reactions between thin films of zinc and (100) InP

    International Nuclear Information System (INIS)

    Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

    1995-01-01

    The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

  11. Long-Term INP Measurements within the BACCHUS project

    Science.gov (United States)

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  12. Effects of impurities on radiation damage in InP

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Ando, K.

    1986-01-01

    Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

  13. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  14. Summary of Workshop on InP: Status and Prospects

    Science.gov (United States)

    Walters, R. J.; Weinberg, I.

    1994-01-01

    The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

  15. Nano-graphene oxide carboxylation for efficient bioconjugation applications: a quantitative optimization approach

    Science.gov (United States)

    Imani, Rana; Emami, Shahriar Hojjati; Faghihi, Shahab

    2015-02-01

    A method for carboxylation of graphene oxide (GO) with chloroacetic acid that precisely optimizes and controls the efficacy of the process for bioconjugation applications is proposed. Quantification of COOH groups on nano-graphene oxide sheets (NGOS) is performed by novel colorimetric methylene blue (MB) assay. The GO is synthesized and carboxylated by chloroacetic acid treatment under strong basic condition. The size and morphology of the as-prepared NGOS are characterized by scanning electron microscopy, transmission electron microscopy (TEM), and atomic force microscopy (AFM). The effect of acid to base molar ratio on the physical, chemical, and morphological properties of NGOS is analyzed by Fourier-transformed infrared spectrometry (FTIR), UV-Vis spectroscopy, X-ray diffraction (XRD), AFM, and zeta potential. For evaluation of bioconjugation efficacy, the synthesized nano-carriers with different carboxylation ratios are functionalized by octaarginine peptide sequence (R8) as a biomolecule model containing amine groups. The quantification of attached R8 peptides to graphene nano-sheets' surface is performed with a colorimetric-based assay which includes the application of 2,4,6-Trinitrobenzene sulfonic acid (TNBS). The results show that the thickness and lateral size of nano-sheets are dramatically decreased to 0.8 nm and 50-100 nm after carboxylation process, respectively. X-ray analysis shows the nano-sheets interlaying space is affected by the alteration of chloroacetic acid to base ratio. The MB assay reveals that the COOH groups on the surface of NGOS are maximized at the acid to base ratio of 2 which is confirmed by FTIR, XRD, and zeta potential. The TNBS assay also shows that bioconjugation of the optimized carboxylated NGOS sample with octaarginine peptide is 2.5 times more efficient compared to bare NGOS. The present work provides evidence that treatment of GO by chloroacetic acid under an optimized condition would create a functionalized high surface

  16. A Highly Efficient Catalyst for Oxime Ligation and Hydrazone-Oxime Exchange Suitable for Bioconjugation

    OpenAIRE

    Rashidian, Mohammad; Mahmoodi, Mohammad M.; Shah, Rachit; Dozier, Jonathan K.; Wagner, Carston R.; Distefano, Mark D.

    2013-01-01

    Imine-based reactions are useful for a wide range of bioconjugation applications. Although aniline is known to catalyze the oxime ligation reaction under physiological conditions, it suffers from slow reaction kinetics, specifically when a ketone is being used or when hydrazone-oxime exchange is performed. Here, we report on the discovery of a new catalyst that is up to 15 times more efficient than aniline. That catalyst, m-phenylenediamine (mPDA), was initially used to analyze the kinetics o...

  17. Photophysics of size-selected InP nanocrystals: Exciton recombination kinetics

    International Nuclear Information System (INIS)

    Kim, S.; Wolters, R.H.; Heath, J.R.

    1996-01-01

    We report here on the size-dependent kinetics of exciton recombination in a III endash V quantum dot system, InP. The measurements reported include various frequency dependent quantum yields as a function of temperature, frequency dependent luminescence decay curves, and time-gated emission spectra. This data is fit to a three-state quantum model which has been previously utilized to explain photophysical phenomena in II endash VI quantum dots. The initial photoexcitation is assumed to place an electron in a (delocalized) bulk conduction band state. Activation barriers for trapping and detrapping of the electron to surface states, as well as activation barriers for surface-state radiationless relaxation processes are measured as a function of particle size. The energy barrier to detrapping is found to be the major factor limiting room temperature band-edge luminescence. This barrier increases with decreasing particle size. For 30 A particles, this barrier is found to be greater than 6 kJ/mol emdash a barrier which is more than an order of magnitude larger than that previously found for 32 A CdS nanocrystals. copyright 1996 American Institute of Physics

  18. A study of 1/f noise in InP grown by CBE

    NARCIS (Netherlands)

    Chen, X.Y.; Leijs, M.R.

    1996-01-01

    The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77

  19. Cytochrome P450 Bioconjugate as a Nanovehicle for Improved Chemotherapy Treatment.

    Science.gov (United States)

    Quester, Katrin; Juarez-Moreno, Karla; Secundino, Isamel; Roseinstein, Yvonne; Alejo, Karla P; Huerta-Saquero, Alejandro; Vazquez-Duhalt, Rafael

    2017-05-01

    Cancer is still a growing public health problem, especially breast cancer that is one of the most important cancers in women. Chemotherapy, even though a successful treatment, is accompanied by severe side effects. Moreover, most of the drugs used for chemotherapy are administered as prodrugs and need to be transformed to the active form by cytochromes P450 (CYPs). In addition, increasing numbers of cancer tissues show lower CYP activity than the surrounding healthy tissues in which prodrugs are preferentially activated causing cytotoxicity. Here, the design of a functionalized cytochrome P450 bioconjugate is reported as nanovehicle for the enzyme direct delivery to the tumor tissue in order to improve the local drug activation. MCF-7 breast cancer cells are treated with CYP-polyethylene glycol bioconjugate functionalized folic acid, where it activates the prodrug tamoxifen and significantly reduces the dose of tamoxifen needed to kill the tumor cells. The CYP bioconjugate covered with polyethylene glycol shows no immunogenic activity. The advantages of increasing the site-specific CYP activity in tumor tissues are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Graphene enhanced field emission from InP nanocrystals.

    Science.gov (United States)

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

    2017-12-08

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  1. An improved large signal model of InP HEMTs

    Science.gov (United States)

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  2. Radiation effects in heteroepitaxial InP solar cells

    Science.gov (United States)

    Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

    1993-01-01

    Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

  3. In vitro cytotoxicity of the ternary PAMAM G3–pyridoxal–biotin bioconjugate

    Directory of Open Access Journals (Sweden)

    Uram Ł

    2013-12-01

    Full Text Available Łukasz Uram, Magdalena Szuster, Krzysztof Gargasz, Aleksandra Filipowicz, Elżbieta Wałajtys-Rode, Stanisław Wołowiec Cosmetology Department, University of Information Technology and Management in Rzeszów, Rzeszów, Poland Abstract: A third-generation polyamidoamine dendrimer (PAMAM G3 was used as a macromolecular carrier for pyridoxal and biotin. The binary covalent bioconjugate of G3, with nine molecules of biotin per one molecule of G3 (G39B, and the ternary covalent bioconjugate of G3, with nine biotin and ten pyridoxal molecules (G39B10P, were synthesized. The biotin and pyridoxal residues of the bioconjugate were available for carboxylase and transaminase enzymes, as demonstrated in the conversion of pyruvate to oxaloacetate and alanine to pyruvate, respectively, by in vitro monitoring of the reactions, using 1H nuclear magnetic resonance spectroscopy. The toxicity of the ternary bioconjugate (BC-PAMAM was studied in vitro on BJ human normal skin fibroblasts and human squamous cell carcinoma (SCC-15 cell cultures in comparison with PAMAM G3, using three cytotoxicity assays (XTT, neutral red, and crystal violet and an estimation of apoptosis by confocal microscopy detection. The tests have shown that BC-PAMAM has significantly lower cytotoxicity compared with PAMAM. Nonconjugated PAMAM was not cytotoxic at concentrations up to 5 µM (NR and 10 µM (XTT, and BC-PAMAM was not cytotoxic up to 50 µM (both assays for both cell lines. It has been also found that normal fibroblasts were more sensitive than SCC to both PAMAM and BC-PAMAM. The effect of PAMAM and BC-PAMAM on the initiation of apoptosis (PAMAM in fibroblasts at 5 µM and BC-PAMAM at 10 µM in both cell lines corresponded with cytotoxicity assays for both cell lines. We concluded that normal fibroblasts are more sensitive to the cytotoxic effects of the PAMAM G3 dendrimer and that modification of its surface cationic groups by substitution with biologically active molecules

  4. Palladium nanoparticles on InP for hydrogen detection

    Directory of Open Access Journals (Sweden)

    Zdansky Karel

    2011-01-01

    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  5. Optical phonon modes of wurtzite InP

    Science.gov (United States)

    Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

    2013-03-01

    Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

  6. Comparative modeling of InP solar cell structures

    Science.gov (United States)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1991-01-01

    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  7. Carrier concentration effects on radiation damage in InP

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Ando, K.; Uemura, C.

    1984-01-01

    Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

  8. Workshop on Heteroepitaxial InP Solar Cells

    Science.gov (United States)

    Weinberg, I.; Walters, R. W.

    1993-01-01

    In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

  9. Proton irradiation induced defects in Cd and Zn doped InP

    International Nuclear Information System (INIS)

    Rybicki, G.C.; Williams, W.S.

    1993-01-01

    Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

  10. InP nanowire array solar cell with cleaned sidewalls

    NARCIS (Netherlands)

    Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

  11. Single-electron tunneling in InP nanowires

    NARCIS (Netherlands)

    Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

    2003-01-01

    A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

  12. Particle detectors based on InP Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  13. Spectroscopic determination of valence band parameters in InP

    International Nuclear Information System (INIS)

    Lewis, R.A.; Lough, B.C.C.

    2003-01-01

    Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

  14. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  15. Surface Plasmons on Highly Doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

    2016-01-01

    Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

  16. Switching dynamics in InP photonic-crystal nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2016-01-01

    In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics of...

  17. 1990's annual report of INPE's Plasma Associated Laboratory

    International Nuclear Information System (INIS)

    1991-06-01

    This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

  18. InP membrane on silicon integration technology

    NARCIS (Netherlands)

    Smit, M.K.

    2013-01-01

    Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

  19. Nano-graphene oxide carboxylation for efficient bioconjugation applications: a quantitative optimization approach

    Energy Technology Data Exchange (ETDEWEB)

    Imani, Rana; Emami, Shahriar Hojjati, E-mail: semami@aut.ac.ir [Amirkabir University of Technology, Department of Biomedical Engineering (Iran, Islamic Republic of); Faghihi, Shahab, E-mail: shahabeddin.faghihi@mail.mcgill.ca, E-mail: sfaghihi@nigeb.ac.ir [National Institute of Genetic Engineering and Biotechnology, Tissue Engineering and Biomaterials Division (Iran, Islamic Republic of)

    2015-02-15

    A method for carboxylation of graphene oxide (GO) with chloroacetic acid that precisely optimizes and controls the efficacy of the process for bioconjugation applications is proposed. Quantification of COOH groups on nano-graphene oxide sheets (NGOS) is performed by novel colorimetric methylene blue (MB) assay. The GO is synthesized and carboxylated by chloroacetic acid treatment under strong basic condition. The size and morphology of the as-prepared NGOS are characterized by scanning electron microscopy, transmission electron microscopy (TEM), and atomic force microscopy (AFM). The effect of acid to base molar ratio on the physical, chemical, and morphological properties of NGOS is analyzed by Fourier-transformed infrared spectrometry (FTIR), UV–Vis spectroscopy, X-ray diffraction (XRD), AFM, and zeta potential. For evaluation of bioconjugation efficacy, the synthesized nano-carriers with different carboxylation ratios are functionalized by octaarginine peptide sequence (R8) as a biomolecule model containing amine groups. The quantification of attached R8 peptides to graphene nano-sheets’ surface is performed with a colorimetric-based assay which includes the application of 2,4,6-Trinitrobenzene sulfonic acid (TNBS). The results show that the thickness and lateral size of nano-sheets are dramatically decreased to 0.8 nm and 50–100 nm after carboxylation process, respectively. X-ray analysis shows the nano-sheets interlaying space is affected by the alteration of chloroacetic acid to base ratio. The MB assay reveals that the COOH groups on the surface of NGOS are maximized at the acid to base ratio of 2 which is confirmed by FTIR, XRD, and zeta potential. The TNBS assay also shows that bioconjugation of the optimized carboxylated NGOS sample with octaarginine peptide is 2.5 times more efficient compared to bare NGOS. The present work provides evidence that treatment of GO by chloroacetic acid under an optimized condition would create a functionalized high

  20. Nano-graphene oxide carboxylation for efficient bioconjugation applications: a quantitative optimization approach

    International Nuclear Information System (INIS)

    Imani, Rana; Emami, Shahriar Hojjati; Faghihi, Shahab

    2015-01-01

    A method for carboxylation of graphene oxide (GO) with chloroacetic acid that precisely optimizes and controls the efficacy of the process for bioconjugation applications is proposed. Quantification of COOH groups on nano-graphene oxide sheets (NGOS) is performed by novel colorimetric methylene blue (MB) assay. The GO is synthesized and carboxylated by chloroacetic acid treatment under strong basic condition. The size and morphology of the as-prepared NGOS are characterized by scanning electron microscopy, transmission electron microscopy (TEM), and atomic force microscopy (AFM). The effect of acid to base molar ratio on the physical, chemical, and morphological properties of NGOS is analyzed by Fourier-transformed infrared spectrometry (FTIR), UV–Vis spectroscopy, X-ray diffraction (XRD), AFM, and zeta potential. For evaluation of bioconjugation efficacy, the synthesized nano-carriers with different carboxylation ratios are functionalized by octaarginine peptide sequence (R8) as a biomolecule model containing amine groups. The quantification of attached R8 peptides to graphene nano-sheets’ surface is performed with a colorimetric-based assay which includes the application of 2,4,6-Trinitrobenzene sulfonic acid (TNBS). The results show that the thickness and lateral size of nano-sheets are dramatically decreased to 0.8 nm and 50–100 nm after carboxylation process, respectively. X-ray analysis shows the nano-sheets interlaying space is affected by the alteration of chloroacetic acid to base ratio. The MB assay reveals that the COOH groups on the surface of NGOS are maximized at the acid to base ratio of 2 which is confirmed by FTIR, XRD, and zeta potential. The TNBS assay also shows that bioconjugation of the optimized carboxylated NGOS sample with octaarginine peptide is 2.5 times more efficient compared to bare NGOS. The present work provides evidence that treatment of GO by chloroacetic acid under an optimized condition would create a functionalized high

  1. Synthesis and use of 2-[18F]fluoromalondialdehyde, an accessible synthon for bioconjugation

    Energy Technology Data Exchange (ETDEWEB)

    Hooker, Jacob M. [Massachusetts General Hospital, Boston, MA (United States)

    2017-03-16

    We proposed methods for the synthesis and purification of 2-[18F]fluoromalondialdehyde, which will be a readily accessible synthon for bioconjugation. Our achievements in these areas will specifically address a stated goal of the DOE providing a transformational technology for macromolecule radiolabeling. Accomplishment of our aims will serve both DOE mission-related research as well as nuclear medicine research supported by the NIH and industry. At the heart of our proposal is the aim to “improve synthetic methodology for rapidly and efficiently incorporating radionuclides into a wide range of organic compounds.”

  2. Nanoparticle bioconjugate for controlled cellular delivery of doxorubicin

    Science.gov (United States)

    Sangtani, Ajmeeta; Petryayeva, Eleonora; Wu, Miao; Susumu, Kimihiro; Oh, Eunkeu; Huston, Alan L.; Lasarte-Aragones, Guillermo; Medintz, Igor L.; Algar, W. Russ; Delehanty, James B.

    2018-02-01

    Nanoparticle (NP)-mediated drug delivery offers the potential to overcome limitations of systemic delivery, including the ability to specifically target cargo and control release of NP-associated drug cargo. Doxorubicin (DOX) is a widely used FDA-approved cancer therapeutic; however, multiple side effects limit its utility. Thus, there is wide interest in modulating toxicity after cell delivery. Our goal here was to realize a NP-based DOX-delivery system that can modulate drug toxicity by controlling the release kinetics of DOX from the surface of a hard NP carrier. To achieve this, we employed a quantum dot (QD) as a central scaffold which DOX was appended via three different peptidyl linkages (ester, disulfide, hydrazone) that are cleavable in response to various intracellular conditions. Attachment of a cell penetrating peptide (CPP) containing a positively charged polyarginine sequence facilitates endocytosis of the ensemble. Polyhistidine-driven metal affinity coordination was used to self-assemble both peptides to the QD surface, allowing for fine control over both the ratio of peptides attached to the QD as well as DOX dose delivered to cells. Microplate-based Förster resonance energy transfer assays confirmed the successful ratiometric assembly of the conjugates and functionality of the linkages. Cell delivery experiments and cytotoxicity assays were performed to compare the various cleavable linkages to a control peptide where DOX is attached through an amide bond. The role played by various attachment chemistries used in QD-peptide-drug assemblies and their implications for the rationale in design of NPbased constructs for drug delivery is described here.

  3. Principles of conjugating quantum dots to proteins via carbodiimide chemistry

    International Nuclear Information System (INIS)

    Song Fayi; Chan, Warren C W

    2011-01-01

    The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein–quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.

  4. Bioconjugated PLGA-4-arm-PEG branched polymeric nanoparticles as novel tumor targeting carriers

    International Nuclear Information System (INIS)

    Ding Hong; Yong, Ken-Tye; Roy, Indrajit; Hu Rui; Zhao Lingling; Law, Wing-Cheung; Ji Wei; Liu Liwei; Bergey, Earl J; Prasad, Paras N; Wu Fang; Zhao Weiwei

    2011-01-01

    In this study, we have developed a novel carrier, micelle-type bioconjugated PLGA-4-arm-PEG branched polymeric nanoparticles (NPs), for the detection and treatment of pancreatic cancer. These NPs contained 4-arm-PEG as corona, and PLGA as core, the particle surface was conjugated with cyclo(arginine-glycine-aspartate) (cRGD) as ligand for in vivo tumor targeting. The hydrodynamic size of the NPs was determined to be 150-180 nm and the critical micellar concentration (CMC) was estimated to be 10.5 mg l -1 . Our in vitro study shows that these NPs by themselves had negligible cytotoxicity to human pancreatic cancer (Panc-1) and human glioblastoma (U87) cell lines. Near infrared (NIR) microscopy and flow cytometry demonstrated that the cRGD conjugated PLGA-4-arm-PEG polymeric NPs were taken up more efficiently by U87MG glioma cells, over-expressing the α v β 3 integrin, when compared with the non-targeted NPs. Whole body imaging showed that the cRGD conjugated PLGA-4-arm-PEG branched polymeric NPs had the highest accumulation in the pancreatic tumor site of mice at 48 h post-injection. Physical, hematological, and pathological assays indicated low in vivo toxicity of this NP formulation. These studies on the ability of these bioconjugated PLGA-4-arm-PEG polymeric NPs suggest that the prepared polymeric NPs may serve as a promising platform for detection and targeted drug delivery for pancreatic cancer.

  5. Potentiometric urea biosensor based on an immobilised fullerene-urease bio-conjugate.

    Science.gov (United States)

    Saeedfar, Kasra; Heng, Lee Yook; Ling, Tan Ling; Rezayi, Majid

    2013-12-06

    A novel method for the rapid modification of fullerene for subsequent enzyme attachment to create a potentiometric biosensor is presented. Urease was immobilized onto the modified fullerene nanomaterial. The modified fullerene-immobilized urease (C60-urease) bioconjugate has been confirmed to catalyze the hydrolysis of urea in solution. The biomaterial was then deposited on a screen-printed electrode containing a non-plasticized poly(n-butyl acrylate) (PnBA) membrane entrapped with a hydrogen ionophore. This pH-selective membrane is intended to function as a potentiometric urea biosensor with the deposition of C60-urease on the PnBA membrane. Various parameters for fullerene modification and urease immobilization were investigated. The optimal pH and concentration of the phosphate buffer for the urea biosensor were 7.0 and 0.5 mM, respectively. The linear response range of the biosensor was from 2.31 × 10-3 M to 8.28 × 10-5 M. The biosensor's sensitivity was 59.67 ± 0.91 mV/decade, which is close to the theoretical value. Common cations such as Na+, K+, Ca2+, Mg2+ and NH4+ showed no obvious interference with the urea biosensor's response. The use of a fullerene-urease bio-conjugate and an acrylic membrane with good adhesion prevented the leaching of urease enzyme and thus increased the stability of the urea biosensor for up to 140 days.

  6. "Click" on PLGA-PEG and hyaluronic acid: Gaining access to anti-leishmanial pentamidine bioconjugates.

    Science.gov (United States)

    Scala, Angela; Piperno, Anna; Micale, Nicola; Mineo, Placido G; Abbadessa, Antonio; Risoluti, Roberta; Castelli, Germano; Bruno, Federica; Vitale, Fabrizio; Cascio, Antonio; Grassi, Giovanni

    2017-12-08

    Pentamidine (Pent), an antiparasitic drug used for the treatment of visceral leishmaniasis, has been modified with terminal azide groups and conjugated to two different polymer backbones (PLGA-PEG [PP] copolymer and hyaluronic acid [HA]) armed with alkyne end-groups. The conjugation has been performed by Copper Catalyzed Azido Alkyne Cycloaddition (CuAAC) using CuSO 4 /sodium ascorbate as metal source. The novel PP-Pent and HA-Pent bioconjugates are proposed, respectively, as non-targeted and targeted drug delivery systems against Leishmania infections. Moreover, Pent has been encapsulated into PP nanoparticles by the oil-in-water emulsion method, with the aim to compare the biological activity of the bioconjugates with that of the classical drug-loaded delivery system that physically entraps the therapeutic agent. Biological assays against Leishmania infantum amastigote-infected macrophages and primary macrophages revealed that Pent, either covalently conjugated with polymers or loaded into polymeric nanoparticles, turned out to be more potent and less toxic than the free Pent. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2017. © 2017 Wiley Periodicals, Inc.

  7. Overview of the main methods used to combine proteins with nanosystems: absorption, bioconjugation, and encapsulation

    Directory of Open Access Journals (Sweden)

    Mariagrazia Di Marco

    2009-12-01

    Full Text Available Mariagrazia Di Marco1, Shaharum Shamsuddin2, Khairunisak Abdul Razak3, Azlan Abdul Aziz4, Corinne Devaux1, Elsa Borghi1, Laurent Levy1, Claudia Sadun51Nanobiotix, Paris, France; 2School of Health Sciences, Health Campus Universiti Sains Malaysia, Kelantan, Malaysia; 3School of Materials and Mineral Resources Engineering, Engineering Campus, 4School of Physics, Universiti Sains Malaysia, Penang, Malaysia; 5Department of Chemistry, Sapienza, University of Rome, Rome, ItalyAbstract: The latest development of protein engineering allows the production of proteins having desired properties and large potential markets, but the clinical advances of therapeutical proteins are still limited by their fragility. Nanotechnology could provide optimal vectors able to protect from degradation therapeutical biomolecules such as proteins, enzymes or specific polypeptides. On the other hand, some proteins can be also used as active ligands to help nanoparticles loaded with chemotherapeutic or other drugs to reach particular sites in the body. The aim of this review is to provide an overall picture of the general aspects of the most successful approaches used to combine proteins with nanosystems. This combination is mainly achieved by absorption, bioconjugation and encapsulation. Interactions of nanoparticles with biomolecules and caveats related to protein denaturation are also pointed out. A clear understanding of nanoparticle-protein interactions could make possible the design of precise and versatile hybrid nanosystems. This could further allow control of their pharmacokinetics as well as activity, and safety.Keywords: nanoparticles, drug delivery, proteins, polypeptides, absorption, bioconjugation, encapsulation

  8. Hemoglobin bioconjugates with surface-protected gold nanoparticles in aqueous media: The stability depends on solution pH and protein properties.

    Science.gov (United States)

    Del Caño, Rafael; Mateus, Lucia; Sánchez-Obrero, Guadalupe; Sevilla, José Manuel; Madueño, Rafael; Blázquez, Manuel; Pineda, Teresa

    2017-11-01

    The identification of the factors that dictate the formation and physicochemical properties of protein-nanomaterial bioconjugates are important to understand their behavior in biological systems. The present work deals with the formation and characterization of bioconjugates made of the protein hemoglobin (Hb) and gold nanoparticles (AuNP) capped with three different molecular layers (citrate anions (c), 6-mercaptopurine (MP) and ω-mercaptoundecanoic acid (MUA)). The main focus is on the behavior of the bioconjugates in aqueous buffered solutions in a wide pH range. The stability of the bioconjugates have been studied by UV-visible spectroscopy by following the changes in the localized surface resonance plasmon band (LSRP), Dynamic light scattering (DLS) and zeta-potential pH titrations. It has been found that they are stable in neutral and alkaline solutions and, at pH lower than the protein isoelectric point, aggregation takes place. Although the surface chemical properties of the AuNPs confer different properties in respect to colloidal stability, once the bioconjugates are formed their properties are dictated by the Hb protein corona. The protein secondary structure, as analyzed by Attenuated total reflectance infrared (ATR-IR) spectroscopy, seems to be maintained under the conditions of colloidal stability but some small changes in protein conformation take place when the bioconjugates aggregate. These findings highlight the importance to keep the protein structure upon interaction with nanomaterials to drive the stability of the bioconjugates. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. An ab initio study of the polytypism in InP

    Science.gov (United States)

    Dacal, Luis C. O.; Cantarero, A.

    2016-09-01

    The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low density of narrow stacking faults regions. Our results confirm the type II band alignment between the phases, producing a reliable qualitative description of the band gap evolution along the growth axis. These results show an spacial asymmetry in the zincblende quantum wells, that is expected due to the fact that the wurtzite stacking sequence (ABAB) is part of the zincblende one (ABCABC), but with an unexpected asymmetry between the valence and the conduction bands. We also present results for the complex dielectric function, clearly showing the influence of the stacking on the homostructure values and surprisingly proving that the correspondent bulk results can be used to reproduce the polytypism even in the limit we considered.

  10. Electric field induced removal of the biexciton binding energy in a single quantum dot

    NARCIS (Netherlands)

    Reimer, M.E.; Kouwen, Van M.P.; Hidma, A.W.; Weert, van M.H.M.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

    2011-01-01

    We control the electrostatic environment of a single InAsP quantum dot in an InP nanowire with two contacts and two lateral gates positioned to an individual nanowire. We empty the quantum dot of excess charges and apply an electric field across its radial dimension. A large tuning range for the

  11. Porous InP as piezoelectric matrix material in 1-3 magnetoelectric composite sensors

    International Nuclear Information System (INIS)

    Gerngross, M.-D.; Leisner, M.; Carstensen, J.; Foell, H.

    2011-01-01

    This work shows the results of the fabrication of semi-insulating piezoelectric porous InP structures by electrochemical etching and subsequent purely chemical post-etching in an isotropic HF, HNO 3 , EtOH and HAc containing electrolyte. The piezoelectric modulus d 14 of porous InP is measured to around |60| pm / V, which larger by a factor of 30 compared to bulk InP.

  12. Radiation defects in electron-irradiated InP crystals

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  13. Optical properties of Sulfur doped InP single crystals

    Science.gov (United States)

    El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

    2014-05-01

    Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

  14. Effects of mask imperfections on InP etching profiles

    International Nuclear Information System (INIS)

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  15. Low temperature synthesis of InP nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Ung Thi Dieu Thuy [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Tran Thi Thuong Huyen [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); National University of Thai Nguyen, 2 Luong Ngoc Quyen, Thai Nguyen (Viet Nam); Nguyen Quang Liem [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam)], E-mail: liemnq@ims.vast.ac.vn; Reiss, Peter [DSM/INAC/SPrAM, UMR 5819 CEA-CNRS-Universite Joseph Fourier/LEMOH, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2008-12-20

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl{sub 3}.4H{sub 2}O and yellow P as the In and P precursors, respectively, and NaBH{sub 4} as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy.

  16. Low temperature synthesis of InP nanocrystals

    International Nuclear Information System (INIS)

    Ung Thi Dieu Thuy; Tran Thi Thuong Huyen; Nguyen Quang Liem; Reiss, Peter

    2008-01-01

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl 3 .4H 2 O and yellow P as the In and P precursors, respectively, and NaBH 4 as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy

  17. Anodic oxidation of InP in pure water

    International Nuclear Information System (INIS)

    Robach, Y.; Joseph, J.; Bergignat, E.; Hollinger, G.

    1989-01-01

    It is shown that thin InP native oxide films can be grown by anodization of InP in pure water. An interfacial phosphorus-rich In(PO 3 ) 3 -like condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, they can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field

  18. Synthesis of Aldehyde-Linked Nucleotides and DNA and Their Bioconjugations with Lysine and Peptides through Reductive Amination

    Czech Academy of Sciences Publication Activity Database

    Raindlová, Veronika; Pohl, Radek; Hocek, Michal

    2012-01-01

    Roč. 18, č. 13 (2012), s. 4080-4087 ISSN 0947-6539 R&D Projects: GA ČR GA203/09/0317 Institutional research plan: CEZ:AV0Z40550506 Keywords : nucleotides * aldehydes * DNA * reductive amination * bioconjugations Subject RIV: CC - Organic Chemistry Impact factor: 5.831, year: 2012

  19. Antireflection coating on InP for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hantehzadeh, M.R. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)]. E-mail: hanteh@sr.iau.ac.ir; Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sari, A.H. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sahlani, F. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shokuhi, A. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shariati, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2006-10-25

    Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM.

  20. Antireflection coating on InP for semiconductor detectors

    International Nuclear Information System (INIS)

    Hantehzadeh, M.R.; Ghoranneviss, M.; Sari, A.H.; Sahlani, F.; Shokuhi, A.; Shariati, M.

    2006-01-01

    Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM

  1. Study of discharge in quiescent plasma machine of the INPE

    International Nuclear Information System (INIS)

    Ferreira, J.G.; Ferreira, J.L.; Ludwig, G.O.; Maciel, H.S.

    1988-12-01

    Measurements of principal plasma parameters produced by quiescent plasma machine of the Instituto de Pesquisas Espaciais (INPE) for current of 500 mA and several values of pressure and discharge power are presented. A qualitative interpretation for obtained results is done and a simple model for plasma density is compared with experimental values. The conditions of cathode operation are also investigated. (M.C.K.)

  2. Chemical etching and polishing of InP

    International Nuclear Information System (INIS)

    Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

    1988-01-01

    This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

  3. Diameter Dependence of Planar Defects in InP Nanowires.

    Science.gov (United States)

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

    2016-09-12

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

  4. Micro-Raman and micro-photoluminescence study of bio-conjugated core–shell CdSe/ZnS nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V. [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Rachkov, O. [The Institute of Molecular Biology and Genetics of NASU, Zabolotnogo Str. 150, 03680 Kyiv (Ukraine); Kryvko, A. [Instituto Politécnico Nacional – ESIME, Av. IPN, Ed. Z4, U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2014-11-15

    The micro-Raman and micro-photoluminescence spectra of non-conjugated and conjugated with antibody against S6K2 commercial CdSe/ZnS quantum dots (QDs) were investigated under different excitation wavelengths and at different temperatures. In the photoluminescence (PL) spectra, the additional PL band shifted on 0.6–0.65 eV to higher energies from the CdSe/ZnS QD exciton PL band is revealed. The relative intensity of this band is found to be several times larger in bio-conjugated QDs, than in the non-conjugated ones. The characteristics of both PL bands (the PL intensity, spectral position and half-width of the PL band) vary similarly under continuous laser light irradiation, storage of the QD samples in the atmospheric ambience as well as during the temperature change. In the Raman spectra recorded under excitation resonant with the high-energy PL band, the additional Raman peaks at about 300 cm{sup −1} and 600 cm{sup −1}, which are close to the frequency of LO and 2LO phonons of bulk CdS, are found. It is proposed that alloyed QDs with chemical composition close to CdS are responsible for the additional high-energy PL band. The possible reasons for the formation of the alloyed QDs are discussed.

  5. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

    DEFF Research Database (Denmark)

    Zubov, F.; Semenova, Elizaveta; Kulkova, Irina

    2017-01-01

    We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a b......We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution...

  6. Orientation dependent emission properties of columnar quantum dash laser structures

    NARCIS (Netherlands)

    Hein, S.; Podemski, P.; Sek, G.; Misiewicz, J.; Ridha, P.; Fiore, A.; Patriarche, G.; Höfling, S.; Forchel, A.

    2009-01-01

    InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser devices show low threshold current densities between 0.73 and 3.5 kA/ cm2, dependent on the CQDash orientation within the cavity.

  7. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

    Directory of Open Access Journals (Sweden)

    Nikolett Sándor

    2015-10-01

    Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  8. Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures

    International Nuclear Information System (INIS)

    Bortoleto, J R R; Zelcovit, J G; Gutierrez, H R; Bettini, J; Cotta, M A

    2008-01-01

    Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-assembled quantum dots. The template strain field can laterally organize compressive (InAs) as well as tensile (GaP) self-assembled nanostructures in a highly ordered square lattice. High-resolution transmission electron microscopy measurements show that the InAs dots are vertically correlated to the InP template, while the GaP dots are vertically anti-correlated, nucleating in the position between two buried InP dots. Finite InP dot size effects are observed to originate InAs clustering but do not affect GaP dot nucleation. The possibility of bilayer formation with different vertical correlations suggests a new path for obtaining three-dimensional pseudocrystals

  9. Structural Control of InP/ZnS Core/Shell Quantum Dots Enables High-quality White LEDs.

    Science.gov (United States)

    Ganesh Kumar, Baskaran; Sadeghi, Sadra; Melikov, Rustamzhon; Mohammadi Aria, Mohammed; Bahmani Jalali, Houman; Ow-Yang, Cleva; Nizamoglu, Sedat

    2018-05-30

    Herein, we demonstrate that the structural and optical control of InP-based quantum dots can lead to high-performance LEDs. Zinc sulphide (ZnS) shells passivate the InP quantum dot core and increase the quantum yield in green-emitting quantum dots by 13-fold and red-emitting quantum dots by 8-fold. The optimised quantum dots are integrated in the liquid-state to eliminate aggregation induced emission quenching and we fabricated white LEDs with warm, neutral, and cool white appearance by the down-conversion mechanism. The quantum dot-functionalized white LEDs achieve luminous efficiency up to 14.7 lm/W and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell quantum dots enable 23-fold enhancement in luminous efficiency of white LEDs compared to ones containing only QDs of InP core. © 2018 IOP Publishing Ltd.

  10. Design, Synthesis and Applications of Hyaluronic Acid-Paclitaxel Bioconjugatesâ€

    Directory of Open Access Journals (Sweden)

    Rinaldo Marini Bettolo

    2008-02-01

    Full Text Available Paclitaxel (1a, a well known antitumor agent adopted mainly for the treatmentof breast and ovarian cancer, suffers from significant disadvantages such as low solubility,certain toxicity and specific drug-resistance of some tumor cells. To overcome theseproblems extensive research has been carried out. Among the various proposed strategies,the conjugation of paclitaxel (1a to a biocompatible polymer, such as hyaluronic acid(HA, 2, has also been considered. Coupling a bioactive compound to a biocompatiblepolymer offers, in general, many advantages such as better drug solubilization, betterstabilization, specific localization and controlled release. Hereafter the design, synthesisand applications of hyaluronic acid-paclitaxel bioconjugates are reviewed. An overview ofHA-paclitaxel combinations is also given.

  11. Stable Poly(methacrylic acid Brush Decorated Silica Nano-Particles by ARGET ATRP for Bioconjugation

    Directory of Open Access Journals (Sweden)

    Marcello Iacono

    2015-08-01

    Full Text Available The synthesis of polymer brush decorated silica nano-particles is demonstrated by activator regeneration by electron transfer atom transfer radical polymerization (ARGET ATRP grafting of poly(tert-butyl methacrylate. ATRP initiator decorated silica nano-particles were obtained using a novel trimethylsiloxane derivatised ATRP initiator obtained by click chemistry. Comparison of de-grafted polymers with polymer obtained from a sacrificial initiator demonstrated good agreement up to 55% monomer conversion. Subsequent mild deprotection of the tert-butyl ester groups using phosphoric acid yielded highly colloidal and pH stable hydrophilic nano-particles comprising approximately 50% methacrylic acid groups. The successful bio-conjugation was achieved by immobilization of Horseradish Peroxidase to the polymer brush decorated nano-particles and the enzyme activity demonstrated in a conversion of o-phenylene diamine dihydrochloride assay.

  12. Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

    Directory of Open Access Journals (Sweden)

    Jeyran eShahbazi

    2013-05-01

    Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

  13. Bioconjugation of lipase and cholesterol oxidase with graphene or graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Rubens A.; Souza, Michele L.; Bloisi, Georgia D.; Corio, Paolo; Petri, Denise F. S., E-mail: dfsp@iq.usp.br [Universidade de São Paulo, Instituto de Química (Brazil)

    2015-04-15

    The catalytic behavior of lipase and cholesterol oxidase (ChOx) in the absence and in the presence of graphene (G) or graphene oxide (GO) was investigated at 24 ± 1 °C and pH 6.5. GO flat sheets (0.5–2 μm) were ∼2-nm thick, while G formed aggregates. The maximum reaction velocity (V{sub max}) values and turnover numbers (k{sub cat}) determined for reactions catalyzed by physical mixtures of lipase (at 0.01 g l{sup −1}) or ChOx (at 0.03 g l{sup −1}) and G (0.012 g l{sup −1}) increased six-fold or doubled, respectively, in comparison to neat enzymes. Circular dichroism (CD) and photoluminescence (PL) spectroscopic measurements revealed the preservation of native secondary structures of enzymes and bioconjugation driven by hydrophobic interaction and energy transfer (redshift) between lipase or ChOx and G, corroborating with the enhanced catalytic behavior. On the other hand, the interactions between GO, which has hydrophilic moieties on the basal plane, and ChOx caused enzyme deactivation, as evidenced by the absence of typical CD signal. At low GO concentration (<0.012 g l{sup −1}), bioconjugates of lipases with GO led to V{sub max} and k{sub cat} values four-fold lower than their counterparts with G, but the GO hydrophilic groups probably favored the affinity for the substrate, because the Michaelis constant (K{sub m}) values decreased in comparison to that of neat lipase. Upon increasing the GO concentration, lipases lost secondary structure and the typical lipase PL bands disappeared.

  14. Potentiometric Urea Biosensor Based on an Immobilised Fullerene-Urease Bio-Conjugate

    Directory of Open Access Journals (Sweden)

    Kasra Saeedfar

    2013-12-01

    Full Text Available A novel method for the rapid modification of fullerene for subsequent enzyme attachment to create a potentiometric biosensor is presented. Urease was immobilized onto the modified fullerene nanomaterial. The modified fullerene-immobilized urease (C60-urease bioconjugate has been confirmed to catalyze the hydrolysis of urea in solution. The biomaterial was then deposited on a screen-printed electrode containing a non-plasticized poly(n-butyl acrylate (PnBA membrane entrapped with a hydrogen ionophore. This pH-selective membrane is intended to function as a potentiometric urea biosensor with the deposition of C60-urease on the PnBA membrane. Various parameters for fullerene modification and urease immobilization were investigated. The optimal pH and concentration of the phosphate buffer for the urea biosensor were 7.0 and 0.5 mM, respectively. The linear response range of the biosensor was from 2.31 × 10−3 M to 8.28 × 10−5 M. The biosensor’s sensitivity was 59.67 ± 0.91 mV/decade, which is close to the theoretical value. Common cations such as Na+, K+, Ca2+, Mg2+ and NH4+ showed no obvious interference with the urea biosensor’s response. The use of a fullerene-urease bio-conjugate and an acrylic membrane with good adhesion prevented the leaching of urease enzyme and thus increased the stability of the urea biosensor for up to 140 days.

  15. Exploring the flexible chemistry of 4-fluoro-3-nitrophenyl azide for biomolecule immobilization and bioconjugation.

    Science.gov (United States)

    Kumar, Saroj; Kumar, Dileep; Ahirwar, Rajesh; Nahar, Pradip

    2016-10-01

    Bioconjugation and functionalization of polymer surfaces are two major tasks in materials chemistry which are accomplished using a variety of coupling agents. Immobilization of biomolecules onto polymer surfaces and the construction of bioconjugates are essential requirements of many biochemical assays and chemical syntheses. Different linkers with a variety of functional groups are used for these purposes. Among them, the benzophenones, aryldiazirines, and arylazides represent the most commonly used photolinker to produce the desired chemical linkage upon their photo-irradiation. In this review, we describe the versatile applications of 4-fluoro-3-nitrophenyl azide, one of the oldest photolinkers used for photoaffinity labeling in the late 1960s. Surprisingly, this photolinker, historically known as 1-fluoro-2-nitro-4-azidobenzene (FNAB), has remained unexplored for a long time because of apprehension that FNAB forms ring-expanded dehydroazepine as a major product and hence cannot activate an inert polymer. The first evidence of photochemical activation of an inert surface by FNAB through nitrene insertion reaction was reported in 2001, and the FNAB-activated surface was found to conjugate a biomolecule without any catalyst, reagent, or modification. FNAB has distinct advantages over perfluorophenyl azide derivatives, which are contemporary nitrene-generating photolinkers, because of its simple, single-step preparation and ease of thermochemical and photochemical reactions with versatile polymers and biomolecules. Covering these aspects, the present review highlights the flexible chemistry of FNAB and its applications in the field of surface engineering, immobilization of biomolecules such as antibodies, enzymes, cells, carbohydrates, oligonucleotides, and DNA aptamers, and rapid diagnostics. Graphical Abstract An overview of the FNAB-engineered activated polymer surfaces for covalent ligation of versatile biomolecules.

  16. Bioconjugation of lipase and cholesterol oxidase with graphene or graphene oxide

    International Nuclear Information System (INIS)

    Silva, Rubens A.; Souza, Michele L.; Bloisi, Georgia D.; Corio, Paolo; Petri, Denise F. S.

    2015-01-01

    The catalytic behavior of lipase and cholesterol oxidase (ChOx) in the absence and in the presence of graphene (G) or graphene oxide (GO) was investigated at 24 ± 1 °C and pH 6.5. GO flat sheets (0.5–2 μm) were ∼2-nm thick, while G formed aggregates. The maximum reaction velocity (V max ) values and turnover numbers (k cat ) determined for reactions catalyzed by physical mixtures of lipase (at 0.01 g l −1 ) or ChOx (at 0.03 g l −1 ) and G (0.012 g l −1 ) increased six-fold or doubled, respectively, in comparison to neat enzymes. Circular dichroism (CD) and photoluminescence (PL) spectroscopic measurements revealed the preservation of native secondary structures of enzymes and bioconjugation driven by hydrophobic interaction and energy transfer (redshift) between lipase or ChOx and G, corroborating with the enhanced catalytic behavior. On the other hand, the interactions between GO, which has hydrophilic moieties on the basal plane, and ChOx caused enzyme deactivation, as evidenced by the absence of typical CD signal. At low GO concentration (<0.012 g l −1 ), bioconjugates of lipases with GO led to V max and k cat values four-fold lower than their counterparts with G, but the GO hydrophilic groups probably favored the affinity for the substrate, because the Michaelis constant (K m ) values decreased in comparison to that of neat lipase. Upon increasing the GO concentration, lipases lost secondary structure and the typical lipase PL bands disappeared

  17. Bioconjugated PLGA-4-arm-PEG branched polymeric nanoparticles as novel tumor targeting carriers

    Energy Technology Data Exchange (ETDEWEB)

    Ding Hong; Yong, Ken-Tye; Roy, Indrajit; Hu Rui; Zhao Lingling; Law, Wing-Cheung; Ji Wei; Liu Liwei; Bergey, Earl J; Prasad, Paras N [Department of Chemistry, Institute for Lasers, Photonics and Biophotonics, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Wu Fang [Department of Pharmaceutical Sciences, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Zhao Weiwei, E-mail: bergeye@buffalo.edu, E-mail: pnprasad@buffalo.edu [Department of Microbiology and Immunology, University at Buffalo, State University of New York, Buffalo, NY 14215 (United States)

    2011-04-22

    In this study, we have developed a novel carrier, micelle-type bioconjugated PLGA-4-arm-PEG branched polymeric nanoparticles (NPs), for the detection and treatment of pancreatic cancer. These NPs contained 4-arm-PEG as corona, and PLGA as core, the particle surface was conjugated with cyclo(arginine-glycine-aspartate) (cRGD) as ligand for in vivo tumor targeting. The hydrodynamic size of the NPs was determined to be 150-180 nm and the critical micellar concentration (CMC) was estimated to be 10.5 mg l{sup -1}. Our in vitro study shows that these NPs by themselves had negligible cytotoxicity to human pancreatic cancer (Panc-1) and human glioblastoma (U87) cell lines. Near infrared (NIR) microscopy and flow cytometry demonstrated that the cRGD conjugated PLGA-4-arm-PEG polymeric NPs were taken up more efficiently by U87MG glioma cells, over-expressing the {alpha}{sub v{beta}3} integrin, when compared with the non-targeted NPs. Whole body imaging showed that the cRGD conjugated PLGA-4-arm-PEG branched polymeric NPs had the highest accumulation in the pancreatic tumor site of mice at 48 h post-injection. Physical, hematological, and pathological assays indicated low in vivo toxicity of this NP formulation. These studies on the ability of these bioconjugated PLGA-4-arm-PEG polymeric NPs suggest that the prepared polymeric NPs may serve as a promising platform for detection and targeted drug delivery for pancreatic cancer.

  18. Bioconjugate techniques

    National Research Council Canada - National Science Library

    Hermanson, Greg T

    2013-01-01

    ... may be reproduced, stored in a retrieval system or transmitted in any form or by any means electronic, mechanical, photocopying, recording or otherwise without the prior written permission of the pu...

  19. Efficiency enhancement of InP nanowire solar cells by surface cleaning

    NARCIS (Netherlands)

    Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

  20. The temperature dependence of 1/f noise in InP

    NARCIS (Netherlands)

    Chen, X.Y.; Hooge, F.N.; Leijs, M.R.

    1997-01-01

    Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 104 kHz at temperatures from 77 to 500 K. The experimental results show that llfnoise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter CtL~,, in this temperature

  1. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  2. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

  3. Photoacoustic investigation of doped InP using open cell configuration

    NARCIS (Netherlands)

    George, S.D.; Vallabhan, C.P.G.; Heck, M.J.R.; Radhakrishnan, P.; Nampoori, V.P.N.

    2002-01-01

    An open cell photoacoustic (PA) configuration was employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data were evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a

  4. Bioconjugated nano-bactericidal complex for potent activity against human and phytopathogens with concern of global drug resistant crisis.

    Science.gov (United States)

    Syed, Baker; Nagendra Prasad, M N; Mohan Kumar, K; Satish, S

    2018-05-09

    The present study emphasizes the need for novel antimicrobial agents to combat the global drug resistant crisis. The development of novel nanomaterials is reported to be of the alternative tool to combat drug resistant pathogens. In present investigation, bioconjugated nano-complex was developed from secondary metabolite secreted from endosymbiont. The endosymbiont capable of secreting antimicrobial metabolite was subjected to fermentation and the culture supernatant was assessed for purification of antimicrobial metabolite via bio-assay guided fraction techniques such as thin layer chromatography (TLC), high performance liquid chromatography (HPLC) and column chromatography. The metabolite was characterized as 2,4-Diacetylphloroglucinol (2,4 DAPG) which was used to develop bioconjugated nano-complex by treating with 1 mM silver nitrate under optimized conditions. The purified metabolite 2,4 DAPG reduced silver nitrate to form bioconjugated nano-complex to form association with silver nanoparticles. The oxidized form of DAPG consists of four hard ligands that can conjugate on to the surface of silver nanoparticles cluster. The bioconjugation was confirmed with UV-visible spectroscopy which displayed the shift and shoulder peak in the absorbance spectra. This biomolecular interaction was further determined by the Fourier-transform spectroscopy (FTIR) and nuclear magnetic resonance (NMR) analyses which displayed different signals ascertaining the molecular binding of 2,4,DAPG with silver nanoparticles. The transmission electron microscopy (TEM) analysis revealed the cluster formation due to bioconjugation. The XRD analysis revealed the crystalline nature of nano-complex with the characteristic peaks indexed to Bragg's reflection occurring at 2θ angle which indicated the (111), (200), (220) and (311) planes. The activity of bioconjugated nano-complex was tested against 12 significant human and phytopathogens. Among all the test pathogens, Shigella flexneri (MTCC

  5. Ultrathin film, high specific power InP solar cells on flexible plastic substrates

    International Nuclear Information System (INIS)

    Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

    2009-01-01

    We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

  6. High conversion efficiency and high radiation resistance InP solar cells

    International Nuclear Information System (INIS)

    Yamamoto, Akio; Itoh, Yoshio; Yamaguchi, Masafumi

    1987-01-01

    The fabrication of homojunction InP solar cells has been studied using impurity thermal diffusion, organometallic vapor phase epitaxy (OMVPE) and liquid phase epitaxy (LPE), and is discussed in this paper. Conversion efficiencies exceeding 20 % (AM1.5) are attained. These are the most efficient results ever reported for InP cells, and are comparable to those for GaAs cells. Electron and γ-ray irradiation studies have also been conducted for fabricated InP cells. The InP cells were found to have higher radiation resistance than GaAs cells. Through these studies, it has been demonstrated that the InP cells have excellent potential for space application. (author)

  7. Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

    Science.gov (United States)

    Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

    2017-06-14

    The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

  8. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

    Science.gov (United States)

    Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2012-10-10

    Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

  9. An ellipsometric measurement of optical properties for InP surfaces

    International Nuclear Information System (INIS)

    Liu, X.; Irene, E.A.; Hattangady, S.; Fountain, G.

    1990-01-01

    Several chemical cleaning procedures for InP surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involved the formation of surface films. In order to determine the complex index of refraction for InP, a novel method which employs ellipsometry measurements of a thin nonabsorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma enhanced chemical vapor deposition (PECVD) SiO 2 and Si 3 N 4 films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521 + i0.300 at the wavelength of 632.8 nm

  10. Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

    DEFF Research Database (Denmark)

    Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

    1995-01-01

    The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

  11. Hopping conductivity via deep impurity states in InP

    International Nuclear Information System (INIS)

    Kuznetsov, V.P.; Messerer, M.A.; Omel'yanovskij, Eh.M.

    1984-01-01

    Hopping (epsilon 3 ) and Mott conductivities via deep impurity compounds with localization radius below 10 A have been studied using as an example Mn in InP. It is shown, that the existing theory of hopping conductivity in low-alloyed semiconductors with Na 3 << 1 can be Used for the case of deep centres as successfully as for the case of insignificant hydrogen-like impurities. Fundamental parameters of the theory: localization radius of wave function of deep impurities, state density near the Fermi level, mean hop length, are determined

  12. Exciton dynamics in near-surface InGaN quantum wells coupled to colloidal nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii; Shirazi, Roza; Yvind, Kresten

    2013-01-01

    We study non-radiative energy transfer between InGaN quantum wells and colloidal InP nanocrystals separated by sub-10nm distance. A significant non-radiative energy transfer between the two layers is accompanied by reduced surface recombination in InGaN.......We study non-radiative energy transfer between InGaN quantum wells and colloidal InP nanocrystals separated by sub-10nm distance. A significant non-radiative energy transfer between the two layers is accompanied by reduced surface recombination in InGaN....

  13. Molecular characterization of multivalent bioconjugates by size-exclusion chromatography (SEC) with multi-angle laser light scattering (MALS)

    Science.gov (United States)

    Pollock, Jacob F.; Ashton, Randolph S.; Rode, Nikhil A.; Schaffer, David V.; Healy, Kevin E.

    2013-01-01

    The degree of substitution and valency of bioconjugate reaction products are often poorly judged or require multiple time- and product- consuming chemical characterization methods. These aspects become critical when analyzing and optimizing the potency of costly polyvalent bioactive conjugates. In this study, size-exclusion chromatography with multi-angle laser light scattering was paired with refractive index detection and ultraviolet spectroscopy (SEC-MALS-RI-UV) to characterize the reaction efficiency, degree of substitution, and valency of the products of conjugation of either peptides or proteins to a biopolymer scaffold, i.e., hyaluronic acid (HyA). Molecular characterization was more complete compared to estimates from a protein quantification assay, and exploitation of this method led to more accurate deduction of the molecular structures of polymer bioconjugates. Information obtained using this technique can improve macromolecular engineering design principles and better understand multivalent macromolecular interactions in biological systems. PMID:22794081

  14. Protein–nanoparticle interaction in bioconjugated silver nanoparticles: A transmission electron microscopy and surface enhanced Raman spectroscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Reymond-Laruinaz, Sébastien; Saviot, Lucien; Potin, Valérie; Marco de Lucas, María del Carmen, E-mail: delucas@u-bourgogne.fr

    2016-12-15

    Highlights: • Synthesis of protein-conjugated Ag nanoparticles (NPs) in absence of citrates. • NPs size and protein layer thickness determined by TEM. • SERS spectra showed the chemisorption of proteins on the surface of Ag-NPs. - Abstract: Understanding the mechanisms of interaction between proteins and noble metal nanoparticles (NPs) is crucial to extend the use of NPs in biological applications and nanomedicine. We report the synthesis of Ag-NPs:protein bioconjugates synthesized in total absence of citrates or other stabilizing agents in order to study the NP-protein interaction. Four common proteins (lysozyme, bovine serum albumin, cytochrome-C and hemoglobin) were used in this work. Transmission electron microscopy (TEM) and surface enhanced Raman spectroscopy (SERS) were mainly used to study these bioconjugated NPs. TEM images showed Ag NPs with sizes in the 5–40 nm range. The presence of a protein layer surrounding the Ag NPs was also observed by TEM. Moreover, the composition at different points of single bioconjugated NPs was probed by electron energy loss spectroscopy (EELS). The thickness of the protein layer varies in the 3–15 nm range and the Ag NPs are a few nanometers away. This allowed to obtain an enhancement of the Raman signal of the proteins in the analysis of water suspensions of bioconjugates. SERS results showed a broadening of the Raman bands of the proteins which we attribute to the contribution of different configurations of the proteins adsorbed on the Ag NPs surface. Moreover, the assignment of an intense and sharp peak in the low-frequency range to Ag–N vibrations points to the chemisorption of the proteins on the Ag-NPs surface.

  15. Protein–nanoparticle interaction in bioconjugated silver nanoparticles: A transmission electron microscopy and surface enhanced Raman spectroscopy study

    International Nuclear Information System (INIS)

    Reymond-Laruinaz, Sébastien; Saviot, Lucien; Potin, Valérie; Marco de Lucas, María del Carmen

    2016-01-01

    Highlights: • Synthesis of protein-conjugated Ag nanoparticles (NPs) in absence of citrates. • NPs size and protein layer thickness determined by TEM. • SERS spectra showed the chemisorption of proteins on the surface of Ag-NPs. - Abstract: Understanding the mechanisms of interaction between proteins and noble metal nanoparticles (NPs) is crucial to extend the use of NPs in biological applications and nanomedicine. We report the synthesis of Ag-NPs:protein bioconjugates synthesized in total absence of citrates or other stabilizing agents in order to study the NP-protein interaction. Four common proteins (lysozyme, bovine serum albumin, cytochrome-C and hemoglobin) were used in this work. Transmission electron microscopy (TEM) and surface enhanced Raman spectroscopy (SERS) were mainly used to study these bioconjugated NPs. TEM images showed Ag NPs with sizes in the 5–40 nm range. The presence of a protein layer surrounding the Ag NPs was also observed by TEM. Moreover, the composition at different points of single bioconjugated NPs was probed by electron energy loss spectroscopy (EELS). The thickness of the protein layer varies in the 3–15 nm range and the Ag NPs are a few nanometers away. This allowed to obtain an enhancement of the Raman signal of the proteins in the analysis of water suspensions of bioconjugates. SERS results showed a broadening of the Raman bands of the proteins which we attribute to the contribution of different configurations of the proteins adsorbed on the Ag NPs surface. Moreover, the assignment of an intense and sharp peak in the low-frequency range to Ag–N vibrations points to the chemisorption of the proteins on the Ag-NPs surface.

  16. Radiation defects in electron-irradiated InP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  17. InP Devices For Millimeter-Wave Monolithic Circuits

    Science.gov (United States)

    Binari, S. C.; Neidert, R. E.; Dietrich, H. B.

    1989-11-01

    High efficiency, mm-wave operation has been obtained from lateral transferred-electron devices (TEDs) designed with a high resistivity region located near the cathode contact. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been achieved with cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. In addition, a monolithic oscillator incorporating the lateral TED has been demonstrated at 79.9 GHz. InP Schottky-barrier diodes have been fabricated using selective MeV ion implantation into semi-insulating InP substrates. Using Si implantation with energies of up to 6.0 MeV, n+ layers as deep as 3 μm with peak carrier concentrations of 2 x 1018 cm-3 have been obtained. These devices have been evaluated as mixers and detectors at 94 GHz and have demonstrated a conversion loss of 7.6 dB and a zero-bias detector sensitivity as high as 400 mV/mW.

  18. Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors

    International Nuclear Information System (INIS)

    Sato, Taketomo; Mizohata, Akinori; Fujino, Toshiyuki; Hashizume, Tamotsu

    2008-01-01

    In this paper, we report the electrochemical formation of the InP porous nanostructures and their feasibility for the application to the amperometric chemical sensors. Our two step electrochemical process consists of the pore formation on a (001) n-type InP substrate and the subsequent etching of pore walls caused by changing the polarity of the InP electrode in a HCl-based electrolyte. By applying the anodic bias to the InP electrode, the high-density array of uniform nanopores was formed on the surface. Next, the cathodic bias was applied to the porous sample to reduce the wall thickness by cathodic decomposition of InP, where the thickness of InP nanowall decreased uniformly along the entire depth of the porous layer. From the amperometric measurements of the porous electrode, it was found that the electrocatalytic activity was much higher than that of the planar electrode. Furthermore, the current sensitivity for the H 2 O 2 detection was much enhanced after the cathodic decomposition process. The InP porous nanostructure formed by the present process is one of the promising structures for the application to the semiconductor-based bio/chemical sensors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Characteristics of withstanding radiation damage of InP crystals and devices

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Ando, Koshi

    1988-01-01

    Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

  20. Damage formation and annealing in InP due to swift heavy ions

    International Nuclear Information System (INIS)

    Kamarou, A.; Wesch, W.; Wendler, E.; Klaumuenzer, S.

    2004-01-01

    Virgin and pre-damaged InP samples were irradiated at room temperature (RT) and at liquid nitrogen temperature (LNT) with different fluences of 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. The pre-damaging was performed with 600 keV Ge ions at LNT to obtain different damage levels. The samples were analysed by means of Rutherford backscattering spectrometry (RBS) in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurs due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is much more efficient in comparison with that of 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe irradiation is hardly visible. At LNT InP appears to be much more radiation-resistant to swift heavy ion (SHI) irradiation than at RT. Our results show that during SHI irradiation of InP both damage formation and damage annealing occur simultaneously. Whether the first or the second one plays a more important role depends on the SHI mass and energy

  1. Optical gain for the interband optical transition in InAsP/InP quantum well wire in the influence of laser field intensity

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, S. [Dept.of Physics, GTN Arts College, Dindigul-624 005. India (India); Peter, A. John, E-mail: a.john.peter@gmail.com [P.G & Research Dept.of Physics, Government Arts College, Melur-625 106. Madurai. India (India)

    2016-05-23

    Intense high frequency laser field induced electronic and optical properties of heavy hole exciton in the InAs{sub 0.8}P{sub 0.2}/InP quantum wire is studied taking into account the geometrical confinement effect. Laser field related exciton binding energies and the optical band gap in the InAs{sub 0.8}P{sub 0.2}/InP quantum well wire are investigated. The optical gain, for the interband optical transition, as a function of photon energy, in the InAs{sub 0.8}P{sub 0.2}/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The obtained optical gain in group III-V narrow quantum wire can be applied for achieving the preferred telecommunication wavelength.

  2. [Managment system in safety and health at work organization. An Italian example in public sector: Inps].

    Science.gov (United States)

    Di Loreto, G; Felicioli, G

    2010-01-01

    The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

  3. All-optical signal processing using InP photonic-crystal nanocavity switches

    DEFF Research Database (Denmark)

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel

    2014-01-01

    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across...... for the joint effects of fast carrier diffusion, slow surface and bulk recombination. Utilizin g the simple InP PhC nanocavity structure, we successfully dem onstrate 10-Gb/s RZ- OOK all-optical modulation with low energy consumption....

  4. Systems and methods for advanced ultra-high-performance InP solar cells

    Science.gov (United States)

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  5. Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

    International Nuclear Information System (INIS)

    Lounis, Z; Bouslama, M; Hamaida, K; Abdellaoui, A; Ouerdane, A; Ghaffour, M; Berrouachedi, N; Jardin, C

    2012-01-01

    We give the great interest to characterise the InP and InPO 4 /InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO 4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In 2 O 3 . We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

  6. Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

    DEFF Research Database (Denmark)

    Cooper, David; Rouviere, Jean-Luc; Béché, Armand

    2011-01-01

    The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which...

  7. Pushing indium phosphide quantum dot emission deeper into the near infrared

    Science.gov (United States)

    Saeboe, A. M.; Kays, J.; Mahler, A. H.; Dennis, A. M.

    2018-02-01

    Cadmium-free near infrared (NIR) emitting quantum dots (QDs) have significant potential for multiplexed tissue-depth imaging applications in the first optical tissue window (i.e., 650 - 900 nm). Indium phosphide (InP) chemistry provides one of the more promising cadmium-free options for biomedical imaging, but the full tunability of this material has not yet been achieved. Specifically, InP QD emission has been tuned from 480 - 730 nm in previous literature reports, but examples of samples emitting from 730 nm to the InP bulk bandgap limit of 925 nm are lacking. We hypothesize that by generating inverted structures comprising ZnSe/InP/ZnS in a core/shell/shell heterostructure, optical emission from the InP shell can be tuned by changing the InP shell thickness, including pushing deeper into the NIR than current InP QDs. Colloidal synthesis methods including hot injection precipitation of the ZnSe core and a modified successive ion layer adsorption and reaction (SILAR) method for stepwise shell deposition were used to promote growth of core/shell/shell materials with varying thicknesses of the InP shell. By controlling the number of injections of indium and phosphorous precursor material, the emission peak was tuned from 515 nm to 845 nm (2.41 - 1.47 eV) with consistent full width half maximum (FWHM) values of the emission peak 0.32 eV. To confer water solubility, the nanoparticles were encapsulated in PEGylated phospholipid micelles, and multiplexing of NIR-emitting InP QDs was demonstrated using an IVIS imaging system. These materials show potential for multiplexed imaging of targeted QD contrast agents in the first optical tissue window.

  8. Bioconjugated fluorescent silica nanoparticles for the rapid detection of Entamoeba histolytica.

    Science.gov (United States)

    Hemadi, Ahmad; Ekrami, Alireza; Oormazdi, Hormozd; Meamar, Ahmad Reza; Akhlaghi, Lame; Samarbaf-Zadeh, Ali Reza; Razmjou, Elham

    2015-05-01

    Rapid detection of Entamoeba histolytica based on fluorescent silica nanoparticle (FSNP) indirect immunofluorescence microscopy was evaluated. Silica nanoparticles were synthesized using Stöber's method, with their surface activated to covalently bind to, and immobilize, protein A. For biolabeling, FSNP was added to conjugated E. histolytica trophozoites with monoclonal anti-E. histolytica IgG1 for microscopic observation of fluorescence. Fluorescent silica nanoparticle sensitivity was determined with axenically cultured E. histolytica serially diluted to seven concentrations. Specificity was evaluated using other intestinal protozoa. Fluorescent silica nanoparticles detected E. histolytica at the lowest tested concentration with no cross-reaction with Entamoeba dispar, Entamoeba moshkovskii, Blastocystis sp., or Giardia lamblia. Visualization of E. histolytica trophozoites with anti-E. histolytica antibody labeled with fluorescein isothiocyanate (FITC) was compared with that using anti-E. histolytica antibody bioconjugated FSNP. Although FITC and FSNP produced similar results, the amount of specific antibody required for FITC to induce fluorescence of similar intensity was fivefold that for FSNP. Fluorescent silica nanoparticles delivered a rapid, simple, cost-effective, and highly sensitive and specific method of detecting E. histolytica. Further study is needed before introducing FSNP for laboratory diagnosis of amoebiasis. Copyright © 2015 Elsevier B.V. All rights reserved.

  9. The Chemistry of Bioconjugation in Nanoparticles-Based Drug Delivery System

    Directory of Open Access Journals (Sweden)

    Karolina Werengowska-Ciećwierz

    2015-01-01

    Full Text Available Nanomedicine is, generally, the application of nanotechnology to medicine. The term nanomedicine includes monitoring, construction of novel drug delivery systems, and any possible future applications of nanotechnology and nanovaccinology. In this review, the most important ligand-nanocarrier and drug-nanocarrier bioconjugations are described. The detailed characterizations of covalently formed bonds between targeted ligand and nanocarrier, including amide, thioether, disulfide, acetyl-hydrazone and polycyclic groups, are described. Also, the coupling of small elements and heteroatoms in the form of R-X-R the “click chemistry” groups is shown. Physical adsorption and chemical bonding of drug to nanocarrier surface involving drug on the internal or external surfaces of nanocarriers are described throughout possibility of the formation of the above-mentioned functionalities. Moreover, the most popular nanostructures (liposomes, micelles, polymeric nanoparticles, dendrimers, carbon nanotubes, and nanohorns are characterized as nanocarriers. Building of modern drug carrier is a new method which could be effectively applied in targeted anticancer therapy.

  10. Photoactivated bioconjugation between ortho-azidophenols and anilines: a facile approach to biomolecular photopatterning.

    Science.gov (United States)

    El Muslemany, Kareem M; Twite, Amy A; ElSohly, Adel M; Obermeyer, Allie C; Mathies, Richard A; Francis, Matthew B

    2014-09-10

    Methods for the surface patterning of small molecules and biomolecules can yield useful platforms for drug screening, synthetic biology applications, diagnostics, and the immobilization of live cells. However, new techniques are needed to achieve the ease, feature sizes, reliability, and patterning speed necessary for widespread adoption. Herein, we report an easily accessible and operationally simple photoinitiated reaction that can achieve patterned bioconjugation in a highly chemoselective manner. The reaction involves the photolysis of 2-azidophenols to generate iminoquinone intermediates that couple rapidly to aniline groups. We demonstrate the broad functional group compatibility of this reaction for the modification of proteins, polymers, oligonucleotides, peptides, and small molecules. As a specific application, the reaction was adapted for the photolithographic patterning of azidophenol DNA on aniline glass substrates. The presence of the DNA was confirmed by the ability of the surface to capture living cells bearing the sequence complement on their cell walls or cytoplasmic membranes. Compared to other light-based DNA patterning methods, this reaction offers higher speed and does not require the use of a photoresist or other blocking material.

  11. Universal method for protein bioconjugation with nanocellulose scaffolds for increased cell adhesion.

    Science.gov (United States)

    Kuzmenko, Volodymyr; Sämfors, Sanna; Hägg, Daniel; Gatenholm, Paul

    2013-12-01

    Bacterial nanocellulose (BNC) is an emerging biomaterial since it is biocompatible, integrates well with host tissue and can be biosynthesized in desired architecture. However, being a hydrogel, it exhibits low affinity for cell attachment, which is crucial for the cellular fate process. To increase cell attachment, the surface of BNC scaffolds was modified with two proteins, fibronectin and collagen type I, using an effective bioconjugation method applying 1-cyano-4-dimethylaminopyridinium (CDAP) tetrafluoroborate as the intermediate catalytic agent. The effect of CDAP treatment on cell adhesion to the BNC surface is shown for human umbilical vein endothelial cells and the mouse mesenchymal stem cell line C3H10T1/2. In both cases, the surface modification increased the number of cells attached to the surfaces. In addition, the morphology of the cells indicated more healthy and viable cells. CDAP activation of bacterial nanocellulose is shown to be a convenient method to conjugate extracellular proteins to the scaffold surfaces. CDAP treatment can be performed in a short period of time in an aqueous environment under heterogeneous and mild conditions preserving the nanofibrillar network of cellulose. © 2013.

  12. Bioconjugate functionalization of thermally carbonized porous silicon using a radical coupling reaction†

    Science.gov (United States)

    Sciacca, Beniamino; Alvarez, Sara D.; Geobaldo, Francesco; Sailor, Michael J.

    2011-01-01

    The high stability of Salonen’s thermally carbonized porous silicon (TCPSi) has attracted attention for environmental and biochemical sensing applications, where corrosion-induced zero point drift of porous silicon-based sensor elements has historically been a significant problem. Prepared by the high temperature reaction of porous silicon with acetylene gas, the stability of this silicon carbide-like material also poses a challenge—many sensor applications require a functionalized surface, and the low reactivity of TCPSi has limited the ability to chemically modify its surface. This work presents a simple reaction to modify the surface of TCPSi with an alkyl carboxylate. The method involves radical coupling of a dicarboxylic acid (sebacic acid) to the TCPSi surface using a benzoyl peroxide initiator. The grafted carboxylic acid species provides a route for bioconjugate chemical modification, demonstrated in this work by coupling propylamine to the surface carboxylic acid group through the intermediacy of pentafluorophenol and 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride (EDC). The stability of the carbonized porous Si surface, both before and after chemical modification, is tested in phosphate buffered saline solution and found to be superior to either hydrosilylated (with undecylenic acid) or thermally oxidized porous Si surfaces. PMID:20967329

  13. INP studies for a Tau-Charm Factory

    International Nuclear Information System (INIS)

    Skrinsky, A.

    1994-01-01

    This paper presents the results of studies undertaken at INP of options for a Tau Charm Factory. Three different beam options have been studied. First is a 'round beam option', allowing axially symmetric beams which yield high tau-pair productivity. The second option involves monochromatic beams, which enhances productivity for narrow c bar c states, gives good tau pair productions in a clean manner, and has a good resonant-to-nonresonant ratio. The third option allows longitudinal polarization, should it prove to be interesting. It is an easy option to implement because it only involves polarized electrons. Work on some of these options is described in terms of experiments on the VEPP-2 device

  14. InAs nanowire formation on InP(001)

    International Nuclear Information System (INIS)

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-01-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

  15. Sulfur as a surface passivation for InP

    Science.gov (United States)

    Iyer, R.; Chang, R. R.; Lile, D. L.

    1988-01-01

    The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

  16. Experimental studies on the surface confined quiescent plasma at INPE

    International Nuclear Information System (INIS)

    Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

    1988-06-01

    Quiescent plasma machines are being used in several experiments at the Associated Plasma Laboratory in INPE. The research activities comprises particle simulation studies on ion acoustic double Layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

  17. Experimental studies on the surface confined quiescent plasma at INPE

    International Nuclear Information System (INIS)

    Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

    1988-01-01

    The quiescent plasma machines used in several experiments at the Associated Plasma Laboratory in INPE are presented. The research activities comprise particle simulation studies on ion acoustic double layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

  18. Bulk and interface defects in electron irradiated InP

    International Nuclear Information System (INIS)

    Peng Chen; Sun Heng-hui

    1989-01-01

    Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

  19. Fabrication and characterization of InP fresnel microlenses

    International Nuclear Information System (INIS)

    Diadiuk, V.; Walpole, J.N.; Liau, Z.L.

    1987-01-01

    Since diode lasers typically have a beam divergence of a few tens of degrees, collimating the laser outputs leads to greatly far-field patterns, which, in turn translates into more power in the main lobe of the combined output. Achieving this collimation in the case of a diode laser array, with its small device-to-device distance, requires an array of similarly spaced microlenses with very short focal length, small diameter and small F number. In this paper, the authors describe the fabrication and performance of a Fresnel microlens array etched directly in InP wafers; these microlenses have been used successfully to collimate the output of GainAsP/InP buried-heterostructure (BH) diode lasers

  20. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    International Nuclear Information System (INIS)

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  1. Channeling study of laser-induced defect generation in InP and InAs

    International Nuclear Information System (INIS)

    Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

    1992-01-01

    Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

  2. Control of persistent photoconductivity in nanostructured InP through morphology design

    International Nuclear Information System (INIS)

    Monaico, Ed; Postolache, V; Borodin, E; Lupan, O; Tiginyanu, I M; Ursaki, V V; Adelung, R; Nielsch, K

    2015-01-01

    In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states. (paper)

  3. Electronic and magnetic properties of digitally Ti doped InP: A first principles study

    International Nuclear Information System (INIS)

    Rahman, Gul; Cho, Sunglae; Hong, Soon Cheol

    2008-01-01

    Using the full-potential linearized augmented plane wave method within the generalized gradient approximation, we study the electronic and the magnetic properties of digitally Ti doped InP. It is quite interesting that digitally Ti-doped InP system shows half metallic ferromagnetism even though both bulk zinc blende TiP and InP are paramagnetic. We also investigate the electronic and the magnetic properties as a function of spacer layer thickness. Their properties such as exchange coupling constant and atomic projected density of states are more or less independent of the InP thickness. Spin density contour maps indicate that the spin-polarization is confined within the TiP plane. The system may show a highly anisotropic property in spin-polarized transport. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

    Science.gov (United States)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

    1994-01-01

    Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  5. Roadmap for integration of InP based photonics and silicon electronics

    NARCIS (Netherlands)

    Williams, K.A.

    2015-01-01

    We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

  6. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  7. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  8. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    Science.gov (United States)

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

  9. Wurtzite InP nanowire arrays grown by selective area MOCVD

    International Nuclear Information System (INIS)

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

    2010-01-01

    InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    Science.gov (United States)

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  11. Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

    Science.gov (United States)

    Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

    2017-12-15

    We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

  12. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

    Science.gov (United States)

    Kriegner, D; Wintersberger, E; Kawaguchi, K; Wallentin, J; Borgström, M T; Stangl, J

    2011-10-21

    High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

  13. Growth of semi-insulating InP through nuclear doping

    International Nuclear Information System (INIS)

    Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

    2012-01-01

    Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

  14. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    International Nuclear Information System (INIS)

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  15. Surface photovoltage study of InP and Zn3P2

    International Nuclear Information System (INIS)

    Thurgate, S.M.; Lacuesta, T.D.; Huck, N.R.

    1989-01-01

    The surface photovoltage spectra of InP and Zn 3 P 2 were measured using a Kelvin probe to determine the contact potential difference between the sample and the probe as a function of the wavelength of illuminating light. The features in the resulting spectra were found to be sensitive to ion bombardment. The photovoltage spectra obtained from the InP differed from previously reported SPC spectra in that it showed clear evidence of surface states (or interfacial states) at 0.86 eV and 0.68 eV above VBM. It was found that the features in the spectrum of Zn 3 P 2 were reduced by ion bombardment, but not removed completely, whereas the features in the InP spectra were completely removed. Exposure of the ion bombarded urface to air restored the features of Zn 3 P 2 but only produced a small change in the spectrum of the InP. The loss of features in the InP spectra can be attributed to damage in the substrate caused by the ion bombardment even though the oxide layer was not removed before the damage occurred. Zn 3 P 2 was not as sensitive to ion damage as InP. (orig.)

  16. Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

    Science.gov (United States)

    Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

    2012-07-01

    A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

  17. P/N InP solar cells on Ge wafers

    Science.gov (United States)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  18. Immunogenicity and safety of a tetravalent E. coli O-antigen bioconjugate vaccine in animal models.

    Science.gov (United States)

    van den Dobbelsteen, Germie P J M; Faé, Kellen C; Serroyen, Jan; van den Nieuwenhof, Ingrid M; Braun, Martin; Haeuptle, Micha A; Sirena, Dominique; Schneider, Joerg; Alaimo, Cristina; Lipowsky, Gerd; Gambillara-Fonck, Veronica; Wacker, Michael; Poolman, Jan T

    2016-07-29

    Extra-intestinal pathogenic Escherichia coli (ExPEC) are major human pathogens; however, no protective vaccine is currently available. We assessed in animal models the immunogenicity and safety of a 4-valent E. coli conjugate vaccine (ExPEC-4V, serotypes O1, O2, O6 and O25 conjugated to Exotoxin A from Pseudomonas aeruginosa (EPA)) produced using a novel in vivo bioconjugation method. Three doses of ExPEC-4V (with or without aluminum hydroxide) were administered to rabbits (2μg or 20μg per O-antigen, subcutaneously), mice (0.2μg or 2μg per O-antigen, subcutaneously) and rats (0.4μg or 4μg per O-antigen, intramuscularly). Antibody persistence and boostability were evaluated in rats using O6-EPA monovalent conjugate (0.4μg O-antigen/dose, intramuscularly). Toxicity was assessed in rats (16μg total polysaccharide, intramuscularly). Serum IgG and IgM antibodies were measured by ELISA. Robust antigen-specific IgG responses were observed in all animal models, with increased responses in rabbits when administered with adjuvant. O antigen-specific antibody responses persisted up to 168days post-priming. Booster immunization induced a rapid recall response. Toxicity of ExPEC-4V when administered to rats was considered to be at the no observed adverse effect level. ExPEC-4V conjugate vaccine showed good immunogenicity and tolerability in animal models supporting progression to clinical evaluation. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Yvind, Kresten

    2011-01-01

    The emission wavelength of InAs quantum dots grown on InP has been shown to shift to the technologically desirable 1.5μm with the deposition of 1–2 monolayers of GaAs on top of the quantum dots. Here, we use aberration-corrected scanning transmission electron microscopy to investigate morphological...... and compositional changes occurring to the quantum dots as a result of the deposition of 1.7 monolayers of GaAs on top of them, prior to complete overgrowth with InP. The results are compared with theoretical models describing the overgrowth process....

  20. VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.

    Science.gov (United States)

    Tateno, Kouta; Zhang, Guoqiang; Gotoh, Hideki; Sogawa, Tetsuomi

    2012-06-13

    We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.

  1. Extremely improved InP template and GaInAsP system growth on directly-bonded InP/SiO2-Si and InP/glass substrate

    International Nuclear Information System (INIS)

    Matsumoto, Keiichi; Makino, Tatsunori; Kimura, Katsuya; Shimomura, Kazuhiko

    2013-01-01

    We have developed an ultrathin InP template with low defect density on SiO 2 -Si and glass substrate by employing wet etching and wafer direct bonding technique. We have demonstrated epitaxial growth on these substrates and GaInAs/InP multiple quantum well layers were grown by low pressure metal-organic vapor-phase epitaxy. Photoluminescence measurements of the layers show that they are optically active and we have obtained almost the same intensity from these substrates compared to the InP substrate. These results may be attributed to improvement of InP template quality and should provide further improvements in device performance realized on SiO 2 -Si and glass substrate. And, these are promising results in terms of integration of InP-based several functional optical devices on SiO 2 -Si and glass substrate. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

    Science.gov (United States)

    Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2014-12-10

    Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

  3. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

    Science.gov (United States)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  4. Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

    Science.gov (United States)

    Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

    2015-06-18

    To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

  5. ESCA and electron diffraction studies of InP surface heated under As molecular beam exposure

    International Nuclear Information System (INIS)

    Sugiura, Hideo; Yamaguchi, Masafumi; Shibukawa, Atsushi

    1983-01-01

    Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590 0 C while the surface of InP heated above 400 0 C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness 0 C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500 0 C in As pressures of 10 -7 - 10 -5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process: 2InPO 4 + As 4 → 2InAs + P 2 O 5 + As 2 O 3 . (author)

  6. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

    International Nuclear Information System (INIS)

    Sanatinia, Reza; Berrier, Audrey; Anand, Srinivasan; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri

    2015-01-01

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, ‘black InP,’ a property useful for solar cells. The realization of a conformal p–n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved. (paper)

  7. Protein expression profile of HT-29 human colon cancer cells after treatment with a cytotoxic daunorubicin-GnRH-III derivative bioconjugate.

    Directory of Open Access Journals (Sweden)

    Verena Natalie Schreier

    Full Text Available Targeted delivery of chemotherapeutic agents is a new approach for the treatment of cancer, which provides increased selectivity and decreased systemic toxicity. We have recently developed a promising drug delivery system, in which the anticancer drug daunorubicin (Dau was attached via oxime bond to a gonadotropin-releasing hormone-III (GnRH-III derivative used as a targeting moiety (Glp-His-Trp-Lys(Ac-His-Asp-Trp-Lys(Da  = Aoa-Pro-Gly-NH2; Glp = pyroglutamic acid, Ac = acetyl; Aoa = aminooxyacetyl. This bioconjugate exerted in vitro cytostatic/cytotoxic effect on human breast, prostate and colon cancer cells, as well as significant in vivo tumor growth inhibitory effect on colon carcinoma bearing mice. In our previous studies, H-Lys(Dau = Aoa-OH was identified as the smallest metabolite produced in the presence of rat liver lysosomal homogenate, which was able to bind to DNA in vitro. To get a deeper insight into the mechanism of action of the bioconjugate, changes in the protein expression profile of HT-29 human colon cancer cells after treatment with the bioconjugate or free daunorubicin were investigated by mass spectrometry-based proteomics. Our results indicate that several metabolism-related proteins, molecular chaperons and proteins involved in signaling are differently expressed after targeted chemotherapeutic treatment, leading to the conclusion that the bioconjugate exerts its cytotoxic action by interfering with multiple intracellular processes.

  8. Bioconjugation of trypsin onto gold nanoparticles: Effect of surface chemistry on bioactivity

    International Nuclear Information System (INIS)

    Hinterwirth, Helmut; Lindner, Wolfgang; Lämmerhofer, Michael

    2012-01-01

    Highlights: ► Size and spacer affect bioactivity of nanoparticulate trypsin reactor. ► Increase of GNP's size increases activity of bound trypsin. ► Increase of spacer length increases amount and activity of immobilized enzyme by factor 6. ► Decrease of digestion time up to less than 1 h when trypsin immobilized onto GNPs. ► Reduced auto-digestion compared to trypsin in-solution. - Abstract: The systematic study of activity, long-time stability and auto-digestion of trypsin immobilized onto gold nanoparticles (GNPs) is described in this paper and compared to trypsin in-solution. Thereby, the influence of GNP's size and immobilization chemistry by various linkers differing in lipophilicity/hydrophilicity and spacer lengths was investigated with regard to the bioactivity of the conjugated enzyme. GNPs with different sizes were prepared by reduction and simultaneous stabilization with trisodium citrate and characterized by UV/vis spectra, dynamic light scattering (DLS), ζ-potential measurements and transmission electron microscopy (TEM). GNPs were derivatized by self-assembling of bifunctional thiol reagents on the nanoparticle (NP) surface via dative thiol-gold bond yielding a carboxylic acid functionalized surface. Trypsin was either attached directly via hydrophobic and ionic interactions onto the citrate stabilized GNPs or immobilized via EDC/NHS bioconjugation onto the carboxylic functionalized GNPs, respectively. The amount of bound trypsin was quantified by measuring the absorbance at 280 nm. The activity of bound enzyme and its Michaelis Menten kinetic parameter K m and v max were measured by the standard chromogenic substrate N α -Benzoyl-DL-arginine 4-nitroanilide hydrochloride (BApNA). Finally, digestion of a standard protein mixture with the trypsin-conjugated NPs followed by analysis with LC–ESI-MS and successful MASCOT search demonstrated the applicability of the new heterogenous nano-structured biocatalyst. It could be shown that the

  9. Bioconjugation of trypsin onto gold nanoparticles: Effect of surface chemistry on bioactivity

    Energy Technology Data Exchange (ETDEWEB)

    Hinterwirth, Helmut; Lindner, Wolfgang [Department of Analytical Chemistry, University of Vienna, Waehringerstrasse 38, 1090 Vienna (Austria); Laemmerhofer, Michael, E-mail: michael.laemmerhofer@uni-tuebingen.de [Department of Analytical Chemistry, University of Vienna, Waehringerstrasse 38, 1090 Vienna (Austria)

    2012-07-06

    Highlights: Black-Right-Pointing-Pointer Size and spacer affect bioactivity of nanoparticulate trypsin reactor. Black-Right-Pointing-Pointer Increase of GNP's size increases activity of bound trypsin. Black-Right-Pointing-Pointer Increase of spacer length increases amount and activity of immobilized enzyme by factor 6. Black-Right-Pointing-Pointer Decrease of digestion time up to less than 1 h when trypsin immobilized onto GNPs. Black-Right-Pointing-Pointer Reduced auto-digestion compared to trypsin in-solution. - Abstract: The systematic study of activity, long-time stability and auto-digestion of trypsin immobilized onto gold nanoparticles (GNPs) is described in this paper and compared to trypsin in-solution. Thereby, the influence of GNP's size and immobilization chemistry by various linkers differing in lipophilicity/hydrophilicity and spacer lengths was investigated with regard to the bioactivity of the conjugated enzyme. GNPs with different sizes were prepared by reduction and simultaneous stabilization with trisodium citrate and characterized by UV/vis spectra, dynamic light scattering (DLS), {zeta}-potential measurements and transmission electron microscopy (TEM). GNPs were derivatized by self-assembling of bifunctional thiol reagents on the nanoparticle (NP) surface via dative thiol-gold bond yielding a carboxylic acid functionalized surface. Trypsin was either attached directly via hydrophobic and ionic interactions onto the citrate stabilized GNPs or immobilized via EDC/NHS bioconjugation onto the carboxylic functionalized GNPs, respectively. The amount of bound trypsin was quantified by measuring the absorbance at 280 nm. The activity of bound enzyme and its Michaelis Menten kinetic parameter K{sub m} and v{sub max} were measured by the standard chromogenic substrate N{sub {alpha}}-Benzoyl-DL-arginine 4-nitroanilide hydrochloride (BApNA). Finally, digestion of a standard protein mixture with the trypsin-conjugated NPs followed by analysis with

  10. Advantages of bioconjugated silica-coated nanoparticles as an innovative diagnosis for human toxoplasmosis.

    Science.gov (United States)

    Aly, Ibrahim; Taher, Eman E; El Nain, Gehan; El Sayed, Hoda; Mohammed, Faten A; Hamad, Rabab S; Bayoumy, Elsayed M

    2018-01-01

    Nanotechnology is a promising arena for generating new applications in Medicine. To successfully functionalised nanoparticles for a given biomedical application, a wide range of chemical, physical and biological factors have to be taken into account. Silica-coated nanoparticles, (SiO2NP) exhibit substantial diagnostic activity owing to their large surface to volume ratios and crystallographic surface structure. This work aimed to evaluate the advantage of bioconjugation of SiO2NP with PAb against Toxoplasma lyzate antigen (TLA) as an innovative diagnostic method for human toxoplasmosis. This cross-sectional study included 120 individuals, divided into Group I: 70 patients suspected for Toxoplasma gondii based on the presence of clinical manifestation. Group II: 30 patients harboring other parasites than T. gondii Group III: 20 apparently healthy individuals free from toxoplasmosis and other parasitic infections served as negative control. Detection of circulating Toxoplasma antigen was performed by Sandwich ELISA and Nano-sandwich ELISA on sera and pooled urine of human samples. Using Sandwich ELISA, 10 out of 70 suspected Toxoplasma-infected human serum samples showed false negative and 8 out of 30 of other parasites groups were false positive giving 85.7% sensitivity and 84.0% specificity, while the sensitivity and specificity were 78.6% and 70% respectively in urine samples. Using Nano-Sandwich ELISA, 7 out of 70 suspected Toxoplasma-infected human samples showed false negative results and the sensitivity of the assay was 90.0%, while 4 out of 30 of other parasites groups were false positive giving 92.0% specificity, while the sensitivity and specificity were 82.6% and 80% respectively in urine samples. In conclusion, our data demonstrated that loading SiO2 nanoparticles with pAb increased the sensitivity and specificity of Nano-sandwich ELISA for detection of T.gondii antigens in serum and urine samples, thus active (early) and light infections could be easily

  11. The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behaviour

    NARCIS (Netherlands)

    Notten, P.H.L.; Damen, A.A.J.M.

    1987-01-01

    Etch rate-potential curves of p-InP in HBr and Br2/HBr solutions in the dark and under illumination were correlated with current-potential curves. It was found that InP is etched via a "chemical" mechanism both by HBr and Br2. In aqueous HBr solutions InP is only etched at a significant rate at

  12. A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

    Science.gov (United States)

    Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

    2011-08-01

    Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

  13. Electrostatically driven resonance energy transfer in ?cationic? biocompatible indium phosphide quantum dots? ?Electronic supplementary information (ESI) available: Detailed experimental methods, the synthesis and characterization of QDs, bioimaging, stability studies, control experiments, and the calculation of various parameters involved in the resonance energy transfer process etc. See DOI: 10.1039/c7sc00592j Click here for additional data file.

    OpenAIRE

    Devatha, Gayathri; Roy, Soumendu; Rao, Anish; Mallick, Abhik; Basu, Sudipta; Pillai, Pramod P.

    2017-01-01

    Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparation of cationic InP/ZnS QDs. The quaternary ammonium group provides the much required permanent posi...

  14. Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots

    International Nuclear Information System (INIS)

    Niederbracht, H; Hargart, F; Schwartz, M; Koroknay, E; Kessler, C A; Jetter, M; Michler, P

    2015-01-01

    Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure. (paper)

  15. 1.55-μm range InAs/InP (100) quantum dot telecom devices

    NARCIS (Netherlands)

    Nötzel, R.; Anantathanasarn, S.; Veldhoven, van P.J.; Barbarin, Y.; Bente, E.A.J.M.; Smit, M.K.; Cade, N.I.; Kamada, H.; Satpati, B.; Trampert, A.; Dhar, N.K.; Dutta, A.K.; Islam, M.S.

    2007-01-01

    Lasing and sharp line emission in the 1.55-µm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2

  16. Electric field effect on the emission rate of H4F and H4S hole traps in InP

    International Nuclear Information System (INIS)

    Darwich, R.; Alek, B.

    2010-01-01

    The electric field effect on the emission rate enhancement of the H4 F and H4 S hole trap in highly Zn-doped InP has been examined using the deep level transient spectroscopy (DLTS) and double correlation DLTS (DDLTS). The DLTS and DDLTS results have been found to be in good agreement for low and intermediate electric fields, but they disagree for large field effect. Comparing our emission data with the theory, we have found that H4 F obeys the quantum model of phonon-assisted tunneling while H4 S follows the Poole-Frenkel model employing a three-dimensional screening coulombic potential. Our results show that the H4 S defect can be attributed to a charged (V p - Zn) complex. (author)

  17. Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

    International Nuclear Information System (INIS)

    Anufriev, Roman; Chauvin, Nicolas; Bru-Chevallier, Catherine; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Patriarche, Gilles

    2014-01-01

    We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures

  18. Twin and grain boundary in InP: A synchrotron radiation study

    International Nuclear Information System (INIS)

    Han, Y.; Liu, X.; Jiao, J.; Lin, L.; Jiang, J.; Wang, Z.; Tian, Y.

    1998-01-01

    Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed

  19. Electrical properties of InP irradiated by fast neutrons of a nuclear reactor

    International Nuclear Information System (INIS)

    Kolin, N.G.; Merkurisov, D.I.; Solov'ev, S.P.

    2000-01-01

    Electrophysical properties of InP single crystalline samples with different initial concentration of charge carriers have been studied in relation to irradiation conditions with fast neutrons of a nuclear reactor and subsequent heat treatments within the temperature range of 20-900 deg C. It has been shown that changes of the properties depend on the initial doping level. The annealing in the temperature range mentioned above results in the elimination of radiation defects. This makes possible to use the nuclear doping method for InP samples. In this respect the contribution of intermediate neutron reactions to the whole effect of the InP nuclear doping is estimated to be ∼ 10% [ru

  20. Magnetic circular dichroism study of electron-irradiation induced defects in InP

    International Nuclear Information System (INIS)

    Gislason, H.P.

    1989-01-01

    A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

  1. Amorphization and recrystallization in MeV ion implanted InP crystals

    International Nuclear Information System (INIS)

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  2. High microwave performance ion-implanted GaAs MESFETs on InP substrates

    International Nuclear Information System (INIS)

    Wada, M.; Kato, K.

    1990-01-01

    Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

  3. Post deposition annealing effect on the properties of Al2O3/InP interface

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  4. Composition and structure of ion-bombardment-induced growth cones on InP

    International Nuclear Information System (INIS)

    Malherbe, J.B.; Lakner, H.; Gries, W.H.

    1991-01-01

    The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

  5. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    Science.gov (United States)

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  6. Band gap and band offset of (GaIn)(PSb) lattice matched to InP

    Science.gov (United States)

    Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

    2005-07-01

    Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

  7. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    Science.gov (United States)

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  8. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

    International Nuclear Information System (INIS)

    Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

    2014-01-01

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

  9. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  10. InP on SOI devices for optical communication and optical network on chip

    Science.gov (United States)

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

    2011-01-01

    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  11. Quantum optics

    National Research Council Canada - National Science Library

    Agarwal, G. S

    2013-01-01

    .... Focusing on applications of quantum optics, the textbook covers recent developments such as engineering of quantum states, quantum optics on a chip, nano-mechanical mirrors, quantum entanglement...

  12. Targeted PEG-based bioconjugates enhance the cellular uptake and transport of a HIV-1 TAT nonapeptide.

    Science.gov (United States)

    Ramanathan, S; Qiu, B; Pooyan, S; Zhang, G; Stein, S; Leibowitz, M J; Sinko, P J

    2001-12-13

    We previously described the enhanced cell uptake and transport of R.I-K(biotin)-Tat9, a large ( approximately 1500 Da) peptidic inhibitor of HIV-1 Tat protein, via SMVT, the intestinal biotin transporter. The aim of the present study was to investigate the feasibility of targeting biotinylated PEG-based conjugates to SMVT in order to enhance cell uptake and transport of Tat9. The 29 kDa peptide-loaded bioconjugate (PEG:(R.I-Cys-K(biotin)-Tat9)8) used in these studies contained eight copies of R.I-K(biotin)-Tat9 appended to PEG by means of a cysteine linkage. The absorptive transport of biotin-PEG-3400 (0.6-100 microM) and the bioconjugate (0.1-30 microM) was studied using Caco-2 cell monolayers. Inhibition of biotin-PEG-3400 by positive controls (biotin, biocytin, and desthiobiotin) was also determined. Uptake of these two compounds was also determined in CHO cells transfected with human SMVT (CHO/hSMVT) and control cells (CHO/pSPORT) over the concentration ranges of 0.05-12.5 microM and 0.003-30 microM, respectively. Nonbiotinylated forms of these two compounds, PEG-3350 and PEG:(R.I-Cys-K-Tat9)8, were used in the control studies. Biotin-PEG-3400 transport was found to be concentration-dependent and saturable in Caco-2 cells (K(m)=6.61 microM) and CHO/hSMVT cells (K(m)=1.26 microM). Transport/uptake was significantly inhibited by positive control substrates of SMVT. PEG:(R.I-Cys-K(biotin)Tat9)8 also showed saturable transport kinetics in Caco-2 cells (K(m)=6.13 microM) and CHO/hSMVT cells (K(m)=8.19 microM). Maximal uptake in molar equivalents of R.I-Cys-K(biotin)Tat9 was 5.7 times greater using the conjugate versus the biotinylated peptide alone. Transport of the nonbiotinylated forms was significantly lower (PPEG-3400 and PEG:(R.I-Cys-K(biotin)Tat9)8 interact with human SMVT to enhance the cellular uptake and transport of these larger molecules and that targeted bioconjugates may have potential for enhancing the cellular uptake and transport of small peptide

  13. Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor; Konczykowska, Agnieszka

    2006-01-01

    In this paper an approach for high-speed InP DHBT modeling valid to 110 GHz is reported. Electromagnetic (EM) simulation is applied to predict the embedded network model caused by pad parasitics. The form of the parasitic network calls for a 4-step de-embedding approach. Applying direct parameter...... extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. An parameter extraction approach is described for the Agilent HBT model, which assures consistency between large-signal and bias-dependent smallsignal modeling....

  14. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2014-01-01

    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  15. Metastability of the phosphorus antisite defect in low-temperature InP

    International Nuclear Information System (INIS)

    Mikucki, J.; Baj, M.; Wasik, D.; Walukiewicz, W.; Bi, W. G.; Tu, C. W.

    2000-01-01

    We report on the transport properties of low-temperature (LT) InP/In x Ga 1-x As/InP heterostructures and LT InP thin films. Hall effect measurements performed at hydrostatic pressure up to 1.5 GPa and temperatures ranging from 4.2 K to 250 K on both types of samples as well as Shubnikov-de Haas experiments made on heterostructures clearly reveal the metastable character of phosphorus antisite defects present in LT InP layers. (c) 2000 The American Physical Society

  16. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

  17. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    International Nuclear Information System (INIS)

    Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

  18. Carrier removal and defect behavior in p-type InP

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  19. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

    Science.gov (United States)

    Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

    2011-07-04

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

  20. Use of halide transport in epitaxial growth of InP and related compounds

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

    1996-12-31

    In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

  1. Emission variation in infrared (CdSeTe)/ZnS quantum dots conjugated to antibodies

    Energy Technology Data Exchange (ETDEWEB)

    Jaramillo Gómez, J.A. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico); Casas Espinola, J.L., E-mail: jlcasas@esfm.ipn.mx [ESFM – Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Douda, J. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico)

    2014-11-15

    The paper presents the photoluminescence (PL) and Raman scattering investigations of infrared CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) in nonconjugated states and after the conjugation to the anti-papilloma virus antibodies (Ab). The Raman scattering study has shown that the CdSeTe core includes two layers with different material compositions such as: CdSe{sub 0.5}Te{sub 0.5} and CdSe{sub 0.7}Te{sub 0.3}. PL spectra of nonconjugated CdSeTe/ZnS QDs are characterized by two Gaussian shape PL bands related to exciton emission in the CdSeTe core and in intermediate layer at the core/shell interface. PL spectra of bioconjugated QDs have changed essentially: the main PL band related to the core emission shifts into high energy and become asymmetric. The energy diagram of double core/shell CdSeTe/ZnS QDs has been analyzed to explain the PL spectrum of nonconjugated QDs and its transformation at the bioconjugation to the papiloma virus antibodies. It is shown that the PL spectrum transformation in bioconjugated QDs can be a powerful technique for biology and medicine.

  2. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

    International Nuclear Information System (INIS)

    Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y.

    2003-01-01

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

  3. Synthesis of aldehyde-linked nucleotides and DNA and their bioconjugations with lysine and peptides through reductive amination.

    Science.gov (United States)

    Raindlová, Veronika; Pohl, Radek; Hocek, Michal

    2012-03-26

    5-(5-Formylthienyl)-, 5-(4-formylphenyl)- and 5-(2-fluoro-5-formylphenyl)cytosine 2'-deoxyribonucleoside mono- (dC(R)MP) and triphosphates (dC(R)TP) were prepared by aqueous Suzuki-Miyaura cross-coupling of 5-iodocytosine nucleotides with the corresponding formylarylboronic acids. The dC(R)TPs were excellent substrates for DNA polymerases and were incorporated into DNA by primer extension or PCR. Reductive aminations of the model dC(R)MPs with lysine or lysine-containing tripeptide were studied and optimized. In aqueous phosphate buffer (pH 6.7) the yields of the reductive aminations with tripeptide III were up to 25 %. Bioconjugation of an aldehyde-containing DNA with a lysine-containing tripeptide was achieved through reductive amination in yields of up to 90 % in aqueous phosphate buffer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Tailoring quantum structures for active photonic crystals

    DEFF Research Database (Denmark)

    Kuznetsova, Nadezda

    demonstrated various trench profiles along the [0-1-1] and [0-11] crystallographic directions. Selectively grown InGaAs/InP quantum wells (QWs) possessed distinct geometrical and optical properties in the cases of directly grown InGaAs and when an InP buffer was deposited underneath. The fabrication process...... consumption for on-chip and chip-to-chip optical communication. In order to develop metal-organic vapor phase epitaxial selective area etching and growth, a mask was fabricated in the HSQ e-beam resist including optimization of exposure and development conditions. By use of CBr4 as an etchant, in situ etching...

  5. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    Directory of Open Access Journals (Sweden)

    Ma Li

    2011-01-01

    Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

  6. Thermal crosstalk investigation in an integrated InP multiwavelength laser

    NARCIS (Netherlands)

    Gilardi, G.; Wale, M.J.; Smit, M.K.

    2012-01-01

    We numerically investigate the thermal crosstalk effects in an integrated InP multiwavelength laser. The multiwavelength laser under investigation consists of a number of Distributed Bragg Reflector lasers and an Arrayed Waveguide Grating. Each laser generates a fixed wavelength and the Arrayed

  7. Electrical properties of bulk InP synthesized by modified horizontal Bridgman method

    International Nuclear Information System (INIS)

    Pak, K.; Matsui, M.; Fukuhara, H.; Nishinaga, T.; Nakamura, T.; Yasuda, Y.

    1986-01-01

    High purity polycrystalline InP has been required for preparation of starting materials in LEC pulling. Usually, these materials are synthesized by the horizontal Bridgman (HB) or gradient freeze (GF) method. The major problem for InP synthesis has been attributed to silicon contamination during the growth, as shown by several workers. In a previous paper, the authors proposed a model in which the silicon contamination would occur due to the transport of SiO and In/sub 2/O gas species from the In-P melt to the phosphorus region by the reaction of the melt with the quartz boat in the HB growth system and suggested that the Si concentration in the In-P melt would have an intimate correlation with the temperature in the phosphorus region. However, the effect of the temperature in the phosphorus region on the electrical properties has not been studied in details as of yet. In this note, a modified horizontal Bridgman (MHB) method was developed to reduce the residual donor impurities, and the reduction mechanism is discussed

  8. The etching of InP in HCl solutions : a chemical mechanism

    NARCIS (Netherlands)

    Notten, P.H.L.

    1984-01-01

    The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was

  9. X-ray diffraction analysis of multilayer porous InP(001) structure

    Czech Academy of Sciences Publication Activity Database

    Lomov, A. A.; Punegov, V. I.; Vasil'ev, A. L.; Nohavica, Dušan; Gladkov, Petar; Kartsev, A. A.; Novikov, D. V.

    2010-01-01

    Roč. 55, č. 2 (2010), s. 182-190 ISSN 1063-7745 Institutional research plan: CEZ:AV0Z20670512 Keywords : silicon layers * INP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.644, year: 2010

  10. Surface protection during plasma hydrogenation for acceptor passivation in InP

    International Nuclear Information System (INIS)

    Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

    1990-01-01

    Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

  11. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model...

  12. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

    Science.gov (United States)

    Dionízio Moreira, M; Venezuela, P; Miwa, R H

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  13. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  14. Low-frequency photocurrent oscillations in InP in magnetic field

    International Nuclear Information System (INIS)

    Slobodchikov, S.V.; Salikhov, Kh.M.; Kovalevskaya, G.G.

    1994-01-01

    Results of investigations of magnetic field effect on the oscillating photocurrent in InP crytals are presented. It is shown that the magnetic field plays the part of an additional source of photocarrier injection in the sample bulk. 3 refs., 2 figs

  15. InP DHBT MMICs for millimeter-wave front-ends

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

    2009-01-01

    In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

  16. InP integrated photonics : state of the art and future directions

    NARCIS (Netherlands)

    Williams, Kevin

    2017-01-01

    InP integrated circuits enable transceiver technologies with more than 200Gb/s per wavelength and 2Tb/s per fiber. Advances in monolithic integration are poised to reduce energy. remove assembly complexity, and sustain future year-on-year performance increases.

  17. Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

    International Nuclear Information System (INIS)

    Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

    1999-01-01

    It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

  18. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

    Science.gov (United States)

    Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

    2011-03-31

    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

  19. Oxidation of InP nanowires: a first principles molecular dynamics study.

    Science.gov (United States)

    Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

    2016-11-16

    InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

  20. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2014-01-01

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

  1. Application of MSM InP detectors to the measurement of pulsed X-ray radiation

    Czech Academy of Sciences Publication Activity Database

    Ryc, L.; Dobrzanski, L.; Dubecký, L.; Kaczmarczyk, J.; Pfeifer, Miroslav; Riesz, F.; Slysz, W.; Surma, B.

    2008-01-01

    Roč. 163, 4-6 (2008), 559-567 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : InP detector * X-ray detector * picosecond detector * laser plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

  2. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    International Nuclear Information System (INIS)

    Dionizio Moreira, M; Venezuela, P; Miwa, R H

    2010-01-01

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  3. New connecting elements for cascade photoelectric converters based on InP

    Science.gov (United States)

    Marichev, A. E.; Pushnyi, B. V.; Levin, R. V.; Lebedeva, N. M.; Prasolov, N. D.; Kontrosh, E. V.

    2018-03-01

    In this paper, we report on the initial studies of connecting elements for cascade photodetectors. The heterostructures used in this work are based on InP. As a connecting element, it is proposed to use nanocrystalline inclusions instead of the tunnel junction. GaP nanocrystals are most suitable for this purpose because this material does not cause absorption of the incident radiation.

  4. X-ray structure amplitudes for GaAs and InP

    International Nuclear Information System (INIS)

    Pietsch, U.

    1985-01-01

    The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

  5. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    2010-01-01

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  6. Design of mm-wave InP DHBT power amplifiers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Yan, Lei

    2011-01-01

    In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

  7. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

  8. EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf

    2017-01-01

    In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrate...

  9. Electrical and thermal characterization of single and multi-finger InP DHBTs

    DEFF Research Database (Denmark)

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

    2015-01-01

    This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal ch...

  10. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

  11. Defect formation in n-type InP at elevated temperatures of irradiation

    International Nuclear Information System (INIS)

    Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1990-01-01

    Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

  12. Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

    NARCIS (Netherlands)

    Tassaert, M.; Dorren, H.J.S.; Roelkens, G.; Raz, O.

    2012-01-01

    Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals

  13. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Habib, C.; Chen, L.R.; Leijtens, X.J.M.; Vries, de T.; Robbins, D.J.; Capmany, J.

    2011-01-01

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in

  14. Mid-IR optical properties of silicon doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

    2017-01-01

    of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

  15. InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

  16. Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

    Science.gov (United States)

    Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri

    2005-08-01

    Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.

  17. Ultrafast recombination in H+ bombarded InP and GaAs: Consequences for the carrier distribution functions

    International Nuclear Information System (INIS)

    Lamprecht, K.F.; Juen, S.; Hoepfel, R.A.; Palmetshofer, L.

    1992-01-01

    The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H + bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime they observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample

  18. Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

    Science.gov (United States)

    Chauvin, Nicolas; Mavel, Amaury; Jaffal, Ali; Patriarche, Gilles; Gendry, Michel

    2018-02-01

    Excitation photoluminescence spectroscopy is usually used to extract the crystal field splitting (ΔCR) and spin orbit coupling (ΔSO) parameters of wurtzite (Wz) InP nanowires (NWs). However, the equations expressing the valence band splitting are symmetric with respect to these two parameters, and a choice ΔCR > ΔSO or ΔCR InP NWs grown on silicon. The experimental results combined with a theoretical model and finite difference time domain calculations allow us to conclude that ΔCR > ΔSO in Wz InP.

  19. Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP

    International Nuclear Information System (INIS)

    Ferrari, C.; Bocchi, C.; Fornari, R.; Moze, O.; Wilson, C.C.

    1992-01-01

    A structural investigation of the Zn blende structure semiconductor InP has been carried out using the single crystal diffractometer SXD at the pulsed neutron facility ISIS. The ability to measure structure factors accurately at large Q values even with highly absorbing materials such as InP is demonstrated. Measurements were performed on a single crystal of InP at 293, 100 and 50 K with the crystallographic axis mounted perpendicular to the scattering plane. This enabled collection of (hhl) reflections up to a maximum with Miller indices (10, 10, 8). (orig.)

  20. High resolution resonant Raman scattering in InP and GaAs

    International Nuclear Information System (INIS)

    Kernohan, E.T.M.

    1996-04-01

    Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measuring the variations in scattering intensity under different excitation conditions. The shape of the Raman line also contains important information, but this has usually been lost because the low signal strengths mean that resolution has been sacrificed for sensitivity. It might therefore be expected that further insights into the processes involved in Raman scattering could be obtained by using high resolution methods. In this thesis I have measured single- and multiple- phonon scattering from bulk GaAs and InP with a spectral resolution better than the intrinsic widths of the Raman lines. For scattering in the region of one longitudinal optic (LO) phonon energy, it is found that in InP the scattering in the allowed and forbidden configurations occur at different Raman shifts, above and below the zone-centre phonon energy respectively. These shifts are used to determine the scattering processes involved, and how they differ between InP and GaAs. The lineshapes obtained in multiple-phonon scattering are found to depend strongly on the excitation energy used, providing evidence for the presence of intermediate resonances. The measured spectra are used to provide information about the phonon dispersion of InP, whose dispersion it is difficult to measure in any other way, and the first evidence is found for an upward dispersion of the LO mode. Raman lineshapes are measured for InP in a magnetic field. The field alters the electronic bandstructure, leading to a series of strong resonances in the Raman efficiency due to interband magneto-optical transitions between Landau levels. This allows multiphonon processes up to sixth-order to be investigated. (author)

  1. Lattice location of diffused Zn atoms in GaAs and InP single crystals

    International Nuclear Information System (INIS)

    Chan, L.Y.; Yu, K.M.; Ben-Tzur, M.; Haller, E.E.; Jaklevic, J.M.; Walukiewicz, W.; Hanson, C.M.

    1991-01-01

    We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 10 20 cm -3 for GaAs, but the maximum concentration for InP appears at mid 10 18 cm -3 . The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn 3 P 2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials

  2. Quantum Erasure: Quantum Interference Revisited

    OpenAIRE

    Walborn, Stephen P.; Cunha, Marcelo O. Terra; Pádua, Sebastião; Monken, Carlos H.

    2005-01-01

    Recent experiments in quantum optics have shed light on the foundations of quantum physics. Quantum erasers - modified quantum interference experiments - show that quantum entanglement is responsible for the complementarity principle.

  3. Near-infrared quantum dots for HER2 localization and imaging of cancer cells.

    Science.gov (United States)

    Rizvi, Sarwat B; Rouhi, Sepideh; Taniguchi, Shohei; Yang, Shi Yu; Green, Mark; Keshtgar, Mo; Seifalian, Alexander M

    2014-01-01

    Quantum dots are fluorescent nanoparticles with unique photophysical properties that allow them to be used as diagnostic, therapeutic, and theranostic agents, particularly in medical and surgical oncology. Near-infrared-emitting quantum dots can be visualized in deep tissues because the biological window is transparent to these wavelengths. Their small sizes and free surface reactive groups that can be conjugated to biomolecules make them ideal probes for in vivo cancer localization, targeted chemotherapy, and image-guided cancer surgery. The human epidermal growth factor receptor 2 gene (HER2/neu) is overexpressed in 25%-30% of breast cancers. The current methods of detection for HER2 status, including immunohistochemistry and fluorescence in situ hybridization, are used ex vivo and cannot be used in vivo. In this paper, we demonstrate the application of near-infrared-emitting quantum dots for HER2 localization in fixed and live cancer cells as a first step prior to their in vivo application. Near-infrared-emitting quantum dots were characterized and their in vitro toxicity was established using three cancer cell lines, ie, HepG2, SK-BR-3 (HER2-overexpressing), and MCF7 (HER2-underexpressing). Mouse antihuman anti-HER2 monoclonal antibody was conjugated to the near-infrared-emitting quantum dots. In vitro toxicity studies showed biocompatibility of SK-BR-3 and MCF7 cell lines with near-infrared-emitting quantum dots at a concentration of 60 μg/mL after one hour and 24 hours of exposure. Near-infrared-emitting quantum dot antiHER2-antibody bioconjugates successfully localized HER2 receptors on SK-BR-3 cells. Near-infrared-emitting quantum dot bioconjugates can be used for rapid localization of HER2 receptors and can potentially be used for targeted therapy as well as image-guided surgery.

  4. 1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability

    DEFF Research Database (Denmark)

    Zubov, F. I.; Gladii, S. P.; Shernyakov, Yu M.

    2016-01-01

    Temperature characteristics of InAs/InGaAsP quantum dot (QD) lasers synthesized on InP (001) substrate are presented. The lasers demonstrate high temperature stability: a threshold current characteristic temperature as high as 205 K in the temperature range between 20 to 50°C was measured. Lasing...

  5. Site-specific bioconjugation of a murine dihydrofolate reductase enzyme by copper(I-catalyzed azide-alkyne cycloaddition with retained activity.

    Directory of Open Access Journals (Sweden)

    Sung In Lim

    Full Text Available Cu(I-catalyzed azide-alkyne cycloaddition (CuAAC is an efficient reaction linking an azido and an alkynyl group in the presence of copper catalyst. Incorporation of a non-natural amino acid (NAA containing either an azido or an alkynyl group into a protein allows site-specific bioconjugation in mild conditions via CuAAC. Despite its great potential, bioconjugation of an enzyme has been hampered by several issues including low yield, poor solubility of a ligand, and protein structural/functional perturbation by CuAAC components. In the present study, we incorporated an alkyne-bearing NAA into an enzyme, murine dihydrofolate reductase (mDHFR, in high cell density cultivation of Escherichia coli, and performed CuAAC conjugation with fluorescent azide dyes to evaluate enzyme compatibility of various CuAAC conditions comprising combination of commercially available Cu(I-chelating ligands and reductants. The condensed culture improves the protein yield 19-fold based on the same amount of non-natural amino acid, and the enzyme incubation under the optimized reaction condition did not lead to any activity loss but allowed a fast and high-yield bioconjugation. Using the established conditions, a biotin-azide spacer was efficiently conjugated to mDHFR with retained activity leading to the site-specific immobilization of the biotin-conjugated mDHFR on a streptavidin-coated plate. These results demonstrate that the combination of reactive non-natural amino acid incorporation and the optimized CuAAC can be used to bioconjugate enzymes with retained enzymatic activity.

  6. Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies

    Science.gov (United States)

    Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.

    2013-06-01

    Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.

  7. Photosensitization of InP/ZnS quantum dots for anti-cancer and anti-microbial applications

    Science.gov (United States)

    Nadeau, Jay; Chibli, Hicham; Carlini, Lina

    2012-03-01

    Cadmium-free quantum dots (QDs), such as those made from InP, show similar optical properties to those containing toxic heavy metals and thus provide a promising alternative for imaging and therapeutics. The band gap of InP is similar to that of CdTe, so photosensitization of InP QDs with porphyrins or other dyes should lead to generation of reactive oxygen species, useful for targeted destruction of malignant cells or pathogenic bacteria. Here we show the results of measurements of singlet oxygen and superoxide generation from InP QDs with single and double ZnS shells compared with CdTe and CdSe/ZnS. Reactive oxygen species are measured using colorimetric or fluorescent reporter assays and spin-trap electron paramagnetic resonance (EPR) spectroscopy. We find that the size of the InP QDs and the thickness of the ZnS shell both strongly influence ROS generation. These results suggest future approaches to the design of therapeutic nanoparticles.

  8. Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

    International Nuclear Information System (INIS)

    Anufriev, Roman; Chauvin, Nicolas; Bru-Chevallier, Catherine; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Patriarche, Gilles

    2013-01-01

    Photoluminescence (PL) quantum efficiency (QE) is experimentally investigated, using an integrating sphere, as a function of excitation power on both InAs/InP quantum rod nanowires (QRod-NWs) and radial quantum well nanowires (QWell-NWs) grown on silicon substrates. The measured values of the QE are compared with those of the planar analogues such as quantum dash and quantum well samples, and found to be comparable for the quantum well structures at relatively low power density. Further studies reveal that the values of QE of the QRod-NWs and QWell-NWs are limited by the low quality of the InP NW structure and the quality of radial quantum well, respectively. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Vapor-phase etching of InP using anhydrous HCl and PH/sub 3/ gas

    International Nuclear Information System (INIS)

    Pak, K.; Koide, Y.; Imai, K.; Yoshida, A.; Nakamura, T.; Yasuda, Y.; Nishinaga, T.

    1986-01-01

    In situ etching of the substrate surface for vapor-phase epitaxy is a useful technique for obtaining a smooth and damage-free surface prior to the growth. Previous work showed that the incorporation of in situ etching of InP substrate with anhydrous HCl gas resulted in a significant improvement in the surface morphologies for MOVPE-grown InGaAs/InP and InP epitaxial layers. However, the experiment on the HCl etching of the InP substrate for a wide temperature range has not been performed as yet. In this note, the authors describe the effect of the substrate temperature on the etching morphology of InP substrate by using the anhydrous HCl and PH/sub 3/ gases. In the experiment, they used a standard MOVPE horizontal system. A quartz reactor tube in a 60 mm ID, 60 cm long, was employed

  10. Influence of the cone angle and crystal shape on the formation of twins in InP crystals

    International Nuclear Information System (INIS)

    Li, Xiaolan; Yang, Ruixia; Yang, Fan; Sun, Tongnian; Sun, Niefeng

    2012-01-01

    We present the investigation of twinning phenomena of LEC InP crystal growth which has been carried out in our laboratory in recent years. It is observed that the yield of twin-free single crystal InP can be grown by control the cone angle and crystal shape of a gradually increased diameter. Twin formation has been correlated to many growth factors. The influence of ingot shape on the formation of twins can be looked as the conical angle dependent twin probability of InP crystals. Twin-free InP crystals can be grown by large cone angle over 75 to 90 . (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

    1996-06-01

    A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

  12. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    International Nuclear Information System (INIS)

    Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

  13. Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

    Science.gov (United States)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

  14. Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

    International Nuclear Information System (INIS)

    Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

    2015-01-01

    In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO 2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP–Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO 2 mask which in turn would have been a consequence of the initial process treatments. The direct InP–Si heterointerface can find applications in high efficiency and cost-effective Si based III–V semiconductor multijunction solar cells and optoelectronics integration. (paper)

  15. Growth and characterization of InP/In0.48Ga0.52P quantum dots optimized for single-photon emission

    International Nuclear Information System (INIS)

    Ugur, Asli

    2012-01-01

    In this work the growth of self-assembled InP/InGaP quantum dots, as well as their optical and structural properties are presented and discussed. The QDs were grown on In 0.48 Ga 0.52 P, lattice matched to GaAs. Self-assembled InP quantum dots are grown using gas-source molecular beam epitaxy over a wide range of InP deposition rates, using an ultra-low growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm 2 is realized. The resulting isolated InP quantum dots are individually characterized without the need for lithographical patterning and masks on the substrate. Both excitonic and biexcitonic emissions are observed from single dots, appearing as doublets with a fine-structure splitting of 320 μeV. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g (2) (0)=0.2. This system is applicable as a single-photon source for applications such as quantum cryptography. The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized In 0.48 Ga 0.52 P surface undulations as a template is also demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the In 0.48 Ga 0.52 P matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots. A polarization degree of 66% is observed. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.

  16. Quantum optics

    National Research Council Canada - National Science Library

    Agarwal, G. S

    2013-01-01

    ..., quantum metrology, spin squeezing, control of decoherence and many other key topics. Readers are guided through the principles of quantum optics and their uses in a wide variety of areas including quantum information science and quantum mechanics...

  17. Surface passivation of InP solar cells with InAlAs layers

    Science.gov (United States)

    Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

    1993-01-01

    The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

  18. Model of deep centers formation and reactions in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.; Gilleron, M.

    1986-01-01

    We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p + n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples

  19. The effect of phosphorus and sulfur treatment on the surface properties of InP

    Science.gov (United States)

    Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

    1988-01-01

    Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

  20. Effect of reactor neutron radiation and temperature on the structure of InP single crystals

    International Nuclear Information System (INIS)

    Bojko, V.M.; Kolin, N.G.; Merkurisov, D.I.; Bublik, V.T.; Voronova, M.I.; Shcherbachev, K.D.

    2006-01-01

    The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast and full spectrum neutrons and subsequent heat treatment. A lattice period in InP single crystals decreases under neutron irradiation. Fast neutrons make the main contribution into the change of the lattice period. Availability of the thermal neutrons initiates the formation of Sn atoms, but does not make a significant influence on the change of the lattice period. Heat treatment of the irradiated samples up to 600 deg C causes the annealing of radiation defects and recovery of the lattice period. With increasing neutron fluences a lattice period becomes even higher than before irradiation [ru

  1. The lower yield point of InP and GaAs

    International Nuclear Information System (INIS)

    Siethoff, H.

    1987-01-01

    A study of the strain-rate and temperature dependence of the lower yield stress (τ ly ) in undoped InP and of the strain-rate dependence of τ ly in undoped and Zn-doped GaAs is reported. The deformation along (123) orientation was carried out in compression at constant strain rates ranging from 10 -5 to 10 -2 s -1 . The temperature range extended from 540 to 780 0 C. The activation energy and stress exponent of the dislocation velocity were calculated. Experiments have shown that τ ly of InP depends on temperature and strain rate in a manner similar to other semiconductors like Si and InSb, whereas τ ly of GaAs shows an unusual strain-rate dependence

  2. Effect of uniaxial stress on free and bismuth-bound excitons in InP

    International Nuclear Information System (INIS)

    Weber, G.; Ruehle, W.

    1979-01-01

    The reduction of the shear deformation potentials of holes bound to the isoelectronic impurity Bi in InP is determined by piezoluminescence. It is compared with the corresponding reduction for holes bound to the Coulomb-type acceptors C and Zn. The theory for an effective mass acceptor describes well the cases of C and Zn. However, additional effects as local strain and Stark fields must be involved in the case of Bi leading to an extremely large reduction of the deformation potentials. No change in binding energy with applied stress as well as no exchange splitting of the Bi-bound exciton can be detected within experimental accuracy. The stress dependence of the free exciton reflectance reveals values for the band deformation potentials and a value of 0.07 meV for the exchange splitting of the free exciton in InP. (author)

  3. Effects of Be doping on InP nanowire growth mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Yee, R. J.; Gibson, S. J.; LaPierre, R. R. [Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Dubrovskii, V. G. [St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)

    2012-12-24

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below {approx}10{sup 18} cm{sup -3}, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

  4. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, K; Wang, P; Pan, W W; Wu, X Y; Yue, L; Gong, Q; Wang, S M

    2015-01-01

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  5. Transient behavior of interface state continuum at InP insulator-semiconductor interface

    International Nuclear Information System (INIS)

    Hasegawa, H.; Masuda, H.; He, L.; Luo, J.K.; Sawada, T.; Ohno, H.

    1987-01-01

    To clarify the drain current drift mechanism in InP MISFETs, an isothermal capacitance transient spectroscopy (ICTS) study of the interface state continuum is made on the anodic Al 2 O 3 /native oxide/ InP MIS system. Capture behavior is temperature-independent, non-exponential and extremely slow, whereas emission behavior is temperature- and bias- dependent, and is much faster. The observed behavior is explained quantitatively by the disorder induced gap state (DIGS) model, where states are distributed both in energy and in space. By comparing the transient behavior of interface states with the observed drift behavior of MISFETs, it is concluded that the electron capture by the DIGS continuum is responsible for the drain current drift of MISFETs. This led to a complete computer simulation of the observed current drift behavior

  6. Structural and electronic properties of zigzag InP nanoribbons with Stone–Wales type defects

    International Nuclear Information System (INIS)

    Longo, R C; Carrete, J; Varela, L M; Gallego, L J

    2016-01-01

    By means of density-functional-theoretic calculations, we investigate the structural and electronic properties of a hexagonal InP sheet and of hydrogen-passivated zigzag InP nanoribbons (ZInPNRs) with Stone–Wales (SW)-type defects. Our results show that the influence of this kind of defect is not limited to the defected region but it leads to the formation of ripples that extend across the systems, in keeping with the results obtained recently for graphene and silicene sheets. The presence of SW defects in ZInPNRs causes an appreciable broadening of the band gap and transforms the indirect-bandgap perfect ZInPNR into a direct-bandgap semiconductor. An external transverse electric field, regardless of its direction, reduces the gap in both the perfect and defective ZInPNRs. (paper)

  7. Minority-carrier lifetime in InP as a function of light bias

    Science.gov (United States)

    Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

    1995-01-01

    Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

  8. Highly doped InP as a low loss plasmonic material for mid-IR region

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

    2016-01-01

    by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

  9. Formation and characterization of Ni nanostructures in porous InP - from crystallites to wires

    International Nuclear Information System (INIS)

    Gerngross, M.-D.; Hrkac, V.; Kienle, L.; Carstensen, J.; Foell, H.

    2013-01-01

    In this work the galvanic formation of Ni crystallites and Ni nanowires with very high aspect ratios (>1000:1) in porous InP is presented. By depositing a dielectric interlayer on the InP pore walls it is possible to produce very high aspect ratio Ni nanowires. The coercivity of these nanowires is about 100 Oe (in-plane) and 240 Oe (out-of-plane), while the coercivity of the crystallites lies in between these values. The in-plane remanence squareness of the Ni nanowires is very low (S ∼ 0.08), out-of-plane it is 0.36. For the Ni crystallites the remanence squareness lies in between the range given for the Ni nanowires. (author)

  10. Effects of quantum confinement and shape on band gap of core/shell quantum dots and nanowires

    Science.gov (United States)

    Gao, Faming

    2011-05-01

    A quantum confinement model for nanocrystals developed is extended to study for the optical gap shifts in core/shell quantum dots and nanowires. The chemical bond properties and gap shifts in the InP/ZnS, CdSe/CdS, CdSe/ZnS, and CdTe/ZnS core/shell quantum dots are calculated in detail. The calculated band gaps are in excellent agreement with experimental values. The effects of structural taping and twinning on quantum confinement of InP and Si nanowires are elucidated. It is found theoretically that a competition between the positive Kubo energy-gap shift and the negative surface energy shift plays the crucial role in the optical gaps of these nanosystems.

  11. Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

    2015-01-01

    Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

  12. Integrated cloud infrastructure of the LIT JINR, PE "NULITS" and INP's Astana branch

    Science.gov (United States)

    Mazhitova, Yelena; Balashov, Nikita; Baranov, Aleksandr; Kutovskiy, Nikolay; Semenov, Roman

    2018-04-01

    The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR) and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity "Nazarbayev University Library and IT services" (PE "NULITS") Autonomous Education Organization "Nazarbayev University" (AO NU) and The Institute of Nuclear Physics' (INP's) Astana branch.

  13. Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires.

    Science.gov (United States)

    Zilli, Attilio; De Luca, Marta; Tedeschi, Davide; Fonseka, H Aruni; Miriametro, Antonio; Tan, Hark Hoe; Jagadish, Chennupati; Capizzi, Mario; Polimeni, Antonio

    2015-04-28

    Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

  14. W-Band InP Wideband MMIC LNA with 30K Noise Temperature

    Science.gov (United States)

    Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

    2000-01-01

    This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

  15. New applications of elemental analysis methods using X-rays at the INPE Cyclotron

    International Nuclear Information System (INIS)

    Constantinescu, B.; Constantin, F.; Dima, S.; Plostinaru, D.; Popa-Simil, L.

    1990-01-01

    Some results in various samples elemental analysis using PIXE(Particle Induced X-ray Emission) method at INPE U-120 Cyclotron are presented. The main purpose of the research was the determination of metal concentration (Ca,Cr,Mn,Fe,Ni,Cu,Zn) in drug industry materials and products, some tree seeds as environmental pollution indicator, mineral oil and gasoline used in mechanical engineering, cooling water for oil industry equipment. (Author)

  16. Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Johansen, Tom Keinicke; Squartecchia, Michele

    2017-01-01

    An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured whil...... operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2....

  17. Changes of surface electron states of InP under soft X-rays irradiation

    International Nuclear Information System (INIS)

    Yang Zhian; Yang Zushen; Jin Tao; Qui Rexi; Cui Mingqi; Liu Fengqin

    1999-01-01

    Changes of surface electronic states of InP under 1 keV X-ray irradiation is studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet ray energy spectroscopy (UPS). The results show that the soft X-ray irradiation has little effect on In atoms but much on P atoms. The authors analysed the mechanism of irradiation and explained the major effect

  18. Raman spectroscopy for characterization of annealing of ion-implanted InP

    International Nuclear Information System (INIS)

    Myers, D.R.; Gourley, P.L.; Vaidyanathan, K.V.; Dunlap, H.L.

    1983-01-01

    Raman spectroscopy has been used as a noncontacting, nondestructive tool to evaluate the properties of Si + - and Be + implanted InP samples annealed at temperatures ranging from 600 to 750C using phospho-silicate glass (PSG) as the encapsulant. Carrier activation, carrier mobility and recovery of damage as a function of anneal temperature obtained from analysis of Raman data agree very well with independent electrical measurements. (author)

  19. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    Science.gov (United States)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  20. Enhanced Biosensor Platforms for Detecting the Atherosclerotic Biomarker VCAM1 Based on Bioconjugation with Uniformly Oriented VCAM1-Targeting Nanobodies

    Directory of Open Access Journals (Sweden)

    Duy Tien Ta

    2016-07-01

    Full Text Available Surface bioconjugation of biomolecules has gained enormous attention for developing advanced biomaterials including biosensors. While conventional immobilization (by physisorption or covalent couplings using the functional groups of the endogenous amino acids usually results in surfaces with low activity, reproducibility and reusability, the application of methods that allow for a covalent and uniformly oriented coupling can circumvent these limitations. In this study, the nanobody targeting Vascular Cell Adhesion Molecule-1 (NbVCAM1, an atherosclerotic biomarker, is engineered with a C-terminal alkyne function via Expressed Protein Ligation (EPL. Conjugation of this nanobody to azidified silicon wafers and Biacore™ C1 sensor chips is achieved via Copper(I-catalyzed azide-alkyne cycloaddition (CuAAC “click” chemistry to detect VCAM1 binding via ellipsometry and surface plasmon resonance (SPR, respectively. The resulting surfaces, covered with uniformly oriented nanobodies, clearly show an increased antigen binding affinity, sensitivity, detection limit, quantitation limit and reusability as compared to surfaces prepared by random conjugation. These findings demonstrate the added value of a combined EPL and CuAAC approach as it results in strong control over the surface orientation of the nanobodies and an improved detecting power of their targets—a must for the development of advanced miniaturized, multi-biomarker biosensor platforms.

  1. Purification, Characterization of Amylase from Indigenously Isolated Aureobasidium pullulans Cau 19 and Its Bioconjugates with Gold Nanoparticles.

    Science.gov (United States)

    Mulay, Y R; Deopurkar, R L

    2018-02-01

    The amylase from Aureobasidium pullulans Cau 19 was purified by ammonium sulfate precipitation and Sephadex G-100 chromatography with a 9.25-fold increase in specific activity as compared to crude enzyme. Km and turn over values of the enzyme were 6.25 mg/mL and 5.0 × 10 2 /min, respectively. Effect of different metal ions on the purified enzyme was investigated; 1 mM calcium (Ca) and cobalt (Co) enhanced enzyme activity by twofold; copper (Cu) had no effect on the activity of the enzyme. Mercury (Hg) 1 mM caused 90% inactivation whereas iron (Fe) and manganese (Mn) caused 10 to 16% inhibition. Amylase from A. pullulans Cau 19 was bioconjugated to gold nanoparticles synthesized using the biomass of A. pullulans Cau 19. Fourier transform infrared spectroscopy confirmed the conjugation of the enzyme to the gold nanoparticles. Though, only 20% of the added enzyme was adsorbed/conjugated on gold nanoparticles, 80% of the adsorbed activity could be estimated in the assay. The conjugated enzyme exhibited better tolerance to a broad pH range of 3.0-9.0 and higher temperatures compared with native enzyme.

  2. Controlled Release of Damascone from Poly(styrene-co-maleic anhydride-based Bioconjugates in Functional Perfumery

    Directory of Open Access Journals (Sweden)

    Andreas Herrmann

    2013-02-01

    Full Text Available Poly(styrene-co-maleic anhydrides were modified with poly(propylene oxide (PO-co-ethylene oxide (EO side chains (Jeffamine® with different EO/PO molar ratios, varying between 0.11 and 3.60. These copolymers were then further functionalized with a β-mercapto ketone of δ-damascone. The obtained poly(maleic acid monoamide-based β-mercapto ketones were then studied as delivery systems for the controlled release of δ-damascone by retro 1,4-addition. The release of δ-damascone, a volatile, bioactive molecule of the family of rose ketones, was studied by dynamic headspace analysis above a cotton surface after deposition of a cationic surfactant containing fabric softening formulation, as a function of the ethylene oxide (EO/propylene oxide (PO molar ratio of the grafted copolymer side chains. The polarity of the EO/PO side chain influenced the release efficiency of the damascone in a typical fabric softening application. PO-rich copolymers and the corresponding poly(styrene-co-maleic anhydride without Jeffamine® side chains were found to be less efficient for the desired fragrance release than the corresponding bioconjugate with a EO/PO ratio of 3.60 in the side chain. This copolymer conjugate seemed to represent a suitable balance between hydrophilicity and hydrophobicity to favor the release of the δ-damascone and to improve the deposition of the conjugate from an aqueous environment onto a cotton surface.

  3. Aptamer-fluorescent silica nanoparticles bioconjugates based dual-color flow cytometry for specific detection of Staphylococcus aureus.

    Science.gov (United States)

    He, Xiaoxiao; Li, Yuhong; He, Dinggen; Wang, Kemin; Shangguan, Jingfang; Shi, Hui

    2014-07-01

    This paper describes a sensitive and specific determination strategy for Staphylococcus aureus (S. aureus) detection using aptamer recognition and fluorescent silica nanoparticles (FSiNPs) label based dual-color flow cytometry assay (Aptamer/FSiNPs-DCFCM). In the protocol, an aptamer, having high affinity to S. aureus, was first covalently immobilized onto chloropropyl functionalized FSiNPs through a click chemistry approach to generate aptamer-nanoparticles bioconjugates (Aptamer/FSiNPs). Next, S. aureus was incubated with Aptamer/FSiNPs, and then stained with SYBR Green I (a special staining material for the duplex DNA). Upon target binding and nucleic acid staining with SYBR Green I, the S. aureus was determined using two-color flow cytometry. The method took advantage of the specificity of aptamer, signal amplification of FSiNPs label and decreased false positives of two-color flow cytometry assay. It was demonstrated that these Aptamer/FSiNPs could efficiently recognize and fluorescently label target S. aureus. Through multiparameter determination with flow cytometry, this assay allowed for detection of as low as 1.5 x 10(2) and 7.6 x 10(2) cells mL(-1) S. aureus in buffer and spiked milk, respectively, with higher sensitivity than the Aptamer/FITC based flow cytometry.

  4. Amine-derived synthetic approach to color-tunable InP/ZnS quantum dots with high fluorescent qualities

    International Nuclear Information System (INIS)

    Song, Woo-Seuk; Lee, Hye-Seung; Lee, Ju Chul; Jang, Dong Seon; Choi, Yoonyoung; Choi, Moongoo; Yang, Heesun

    2013-01-01

    High-quality, Cd-free InP quantum dots (QDs) have been conventionally synthesized by exclusively selecting tris(trimethylsilyl)phosphine (P(TMS) 3 ) as a phosphorus (P) precursor, which is problematic from the standpoint of green and economic chemistry. Thus, other synthetic chemistries adopting alternative P sources to P(TMS) 3 have been introduced, however, they could not guarantee the production of satisfactorily fluorescence-efficient, color-pure InP QDs. In this study, the unprecedented controlled synthesis of a series of band-gap-tuned InP QDs is demonstrated through a hot-injection of a far safer and cheaper tris(dimethylamino)phosphine in the presence of a key coordinating solvent of oleylamine that enables successful QD nucleation/growth. Effects of the co-existence of Zn additive, the core growth temperature, and the amount of P source injected on the growth behaviors of InP QD are investigated. After ZnS overcoating by a successive injection of 1-dodecanethiol only, high-fluorescence-quality, green-to-red color emission-tunable core/shell QDs of InP/ZnS are obtained. The fluorescent characteristics of different color-emitting QDs desirably exhibit little fluctuations in quantum yield and emission bandwidth, specifically ranging 51–53 % and 60–64 nm, respectively. Lastly, the utility of the introduction of a secondary shelling process in rendering the QDs are more bright, photostable is also proved.

  5. Amine-derived synthetic approach to color-tunable InP/ZnS quantum dots with high fluorescent qualities

    Science.gov (United States)

    Song, Woo-Seuk; Lee, Hye-Seung; Lee, Ju Chul; Jang, Dong Seon; Choi, Yoonyoung; Choi, Moongoo; Yang, Heesun

    2013-06-01

    High-quality, Cd-free InP quantum dots (QDs) have been conventionally synthesized by exclusively selecting tris(trimethylsilyl)phosphine (P(TMS)3) as a phosphorus (P) precursor, which is problematic from the standpoint of green and economic chemistry. Thus, other synthetic chemistries adopting alternative P sources to P(TMS)3 have been introduced, however, they could not guarantee the production of satisfactorily fluorescence-efficient, color-pure InP QDs. In this study, the unprecedented controlled synthesis of a series of band-gap-tuned InP QDs is demonstrated through a hot-injection of a far safer and cheaper tris(dimethylamino)phosphine in the presence of a key coordinating solvent of oleylamine that enables successful QD nucleation/growth. Effects of the co-existence of Zn additive, the core growth temperature, and the amount of P source injected on the growth behaviors of InP QD are investigated. After ZnS overcoating by a successive injection of 1-dodecanethiol only, high-fluorescence-quality, green-to-red color emission-tunable core/shell QDs of InP/ZnS are obtained. The fluorescent characteristics of different color-emitting QDs desirably exhibit little fluctuations in quantum yield and emission bandwidth, specifically ranging 51-53 % and 60-64 nm, respectively. Lastly, the utility of the introduction of a secondary shelling process in rendering the QDs are more bright, photostable is also proved.

  6. Amine-derived synthetic approach to color-tunable InP/ZnS quantum dots with high fluorescent qualities

    Energy Technology Data Exchange (ETDEWEB)

    Song, Woo-Seuk; Lee, Hye-Seung [Hongik University, Department of Materials Science and Engineering (Korea, Republic of); Lee, Ju Chul; Jang, Dong Seon; Choi, Yoonyoung; Choi, Moongoo [LGE Advanced Research Institute, LG Electronics, Materials and Devices Laboratory (Korea, Republic of); Yang, Heesun, E-mail: hyang@hongik.ac.kr [Hongik University, Department of Materials Science and Engineering (Korea, Republic of)

    2013-06-15

    High-quality, Cd-free InP quantum dots (QDs) have been conventionally synthesized by exclusively selecting tris(trimethylsilyl)phosphine (P(TMS){sub 3}) as a phosphorus (P) precursor, which is problematic from the standpoint of green and economic chemistry. Thus, other synthetic chemistries adopting alternative P sources to P(TMS){sub 3} have been introduced, however, they could not guarantee the production of satisfactorily fluorescence-efficient, color-pure InP QDs. In this study, the unprecedented controlled synthesis of a series of band-gap-tuned InP QDs is demonstrated through a hot-injection of a far safer and cheaper tris(dimethylamino)phosphine in the presence of a key coordinating solvent of oleylamine that enables successful QD nucleation/growth. Effects of the co-existence of Zn additive, the core growth temperature, and the amount of P source injected on the growth behaviors of InP QD are investigated. After ZnS overcoating by a successive injection of 1-dodecanethiol only, high-fluorescence-quality, green-to-red color emission-tunable core/shell QDs of InP/ZnS are obtained. The fluorescent characteristics of different color-emitting QDs desirably exhibit little fluctuations in quantum yield and emission bandwidth, specifically ranging 51-53 % and 60-64 nm, respectively. Lastly, the utility of the introduction of a secondary shelling process in rendering the QDs are more bright, photostable is also proved.

  7. Temperature dependence of active photonic band gap in bragg-spaced quantum wells

    International Nuclear Information System (INIS)

    Hu Zhiqiang; Wang Tao; Yu Chunchao; Xu Wei

    2011-01-01

    A novel all-optical polarization switch of active photonic band gap structure based on non-resonant optical Stark effect bragg-spaced quantum wells was investigated and it could be compatible with the optical communication system. The theory is based on InGaAsP/InP Bragg-spaced quantum wells (BSQWs). Mainly through the design of the InGaAsP well layer component and InP barrier thickness to make the quantum-period cycle meet the bragg condition and the bragg frequency is equal to re-hole exciton resonance frequency. When a spectrally narrow control pulse is tuned within the forbidden gap, such BSQWs have been shown to exhibit large optical nonlinearities and ps recovery times, which can form T hz switch. However, the exciton binding energy of InGaAsP will be automatically separate at room temperature, so the effect of all-optical polarization switching of active photonic band gap bragg structure quantum wells can only be studied at low temperature. By a large number of experiments, we tested part of the material parameters of BSQWs in the temperature range 10-300K. On this basis, the InGaAsP and InP refractive index changes with wavelength, InP thermal expansion coefficient are studied and a relationship equation is established. Experimental results show that the bragg reflection spectra with temperature mainly is effected by InP refractive index changes with temperature. Our theoretical study and experiment are an instruction as a reference in the designs and experiments of future practical optical switches.

  8. Temperature dependence of active photonic band gap in bragg-spaced quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Hu Zhiqiang; Wang Tao; Yu Chunchao; Xu Wei, E-mail: huzhiqianghzq@163.com [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei (China)

    2011-02-01

    A novel all-optical polarization switch of active photonic band gap structure based on non-resonant optical Stark effect bragg-spaced quantum wells was investigated and it could be compatible with the optical communication system. The theory is based on InGaAsP/InP Bragg-spaced quantum wells (BSQWs). Mainly through the design of the InGaAsP well layer component and InP barrier thickness to make the quantum-period cycle meet the bragg condition and the bragg frequency is equal to re-hole exciton resonance frequency. When a spectrally narrow control pulse is tuned within the forbidden gap, such BSQWs have been shown to exhibit large optical nonlinearities and ps recovery times, which can form T hz switch. However, the exciton binding energy of InGaAsP will be automatically separate at room temperature, so the effect of all-optical polarization switching of active photonic band gap bragg structure quantum wells can only be studied at low temperature. By a large number of experiments, we tested part of the material parameters of BSQWs in the temperature range 10-300K. On this basis, the InGaAsP and InP refractive index changes with wavelength, InP thermal expansion coefficient are studied and a relationship equation is established. Experimental results show that the bragg reflection spectra with temperature mainly is effected by InP refractive index changes with temperature. Our theoretical study and experiment are an instruction as a reference in the designs and experiments of future practical optical switches.

  9. InP/ZnSe/ZnS core-multishell quantum dots for improved luminescence efficiency

    Science.gov (United States)

    Greco, Tonino; Ippen, Christian; Wedel, Armin

    2012-04-01

    Semiconductor quantum dots (QDs) exhibit unique optical properties like size-tunable emission color, narrow emission peak, and high luminescence efficiency. QDs are therefore investigated towards their application in light-emitting devices (QLEDs), solar cells, and for bio-imaging purposes. In most cases QDs made from cadmium compounds like CdS, CdSe or CdTe are studied because of their facile and reliable synthesis. However, due to the toxicity of Cd compounds and the corresponding regulation (e.g. RoHS directive in Europe) these materials are not feasible for customer applications. Indium phosphide is considered to be the most promising alternative because of the similar band gap (InP 1.35 eV, CdSe 1.73 eV). InP QDs do not yet reach the quality of CdSe QDs, especially in terms of photoluminescence quantum yield and peak width. Typically, QDs are coated with another semiconductor material of wider band gap, often ZnS, to passivate surface defects and thus improve luminescence efficiency. Concerning CdSe QDs, multishell coatings like CdSe/CdS/ZnS or CdSe/ZnSe/ZnS have been shown to be advantageous due to the improved compatibility of lattice constants. Here we present a method to improve the luminescence efficiency of InP QDs by coating a ZnSe/ZnS multishell instead of a ZnS single shell. ZnSe exhibits an intermediate lattice constant of 5.67 Å between those of InP (5.87 Å) and ZnS (5.41 Å) and thus acts as a wetting layer. As a result, InP/ZnSe/ZnS is introduced as a new core-shell quantum dot material which shows improved photoluminescence quantum yield (up to 75 %) compared to the conventional InP/ZnS system.

  10. Conjugation of biotin-coated luminescent quantum dots with single domain antibody-rhizavidin fusions

    Directory of Open Access Journals (Sweden)

    Jinny L. Liu

    2016-06-01

    Full Text Available Straightforward and effective methods are required for the bioconjugation of proteins to surfaces and particles. Previously we demonstrated that the fusion of a single domain antibody with the biotin binding molecule rhizavidin provided a facile method to coat biotin-modified surfaces with a highly active and oriented antibody. Here, we constructed similar single domain antibody—rhizavidin fusions as well as unfused rhizavidin with a His-tag. The unfused rhizavidin produced efficiently and its utility for assay development was demonstrated in surface plasmon resonance experiments. The single domain antibody-rhizavidin fusions were utilized to coat quantum dots that had been prepared with surface biotins. Preparation of antibody coated quantum dots by this means was found to be both easy and effective. The prepared single domain antibody-quantum dot reagent was characterized by surface plasmon resonance and applied to toxin detection in a fluoroimmunoassay sensing format.

  11. Aqueous bromine etching of InP: a specific surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

    2012-06-15

    The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Highly doped InP as a low loss plasmonic material for mid-IR region.

    Science.gov (United States)

    Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

    2016-12-12

    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

  13. Formation mechanisms for the dominant kinks with different angles in InP nanowires.

    Science.gov (United States)

    Zhang, Minghuan; Wang, Fengyun; Wang, Chao; Wang, Yiqian; Yip, SenPo; Ho, Johnny C

    2014-01-01

    The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties.

  14. Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production.

    Science.gov (United States)

    Li, Qiang; Zheng, Maojun; Ma, Liguo; Zhong, Miao; Zhu, Changqing; Zhang, Bin; Wang, Faze; Song, Jingnan; Ma, Li; Shen, Wenzhong

    2016-08-31

    Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

  15. Photoreflection investigations of the dopant activation in InP doped with beryllium ions

    International Nuclear Information System (INIS)

    Avakyants, L.P.; Bokov, P.Yu.; Chervyakov, A.V.

    2005-01-01

    The processes of the dopant activation in the InP crystals implanted with Be + ions (energy 100 keV, dose 10 13 cm -2 and subsequent thermal annealing during 10 s) have been studied by means of photoreflection spectroscopy. Spectral lines of the crystal InP were absent in the photoreflection spectra of the samples annealed at temperatures less then 400 Deg C. This fact is connected with the disordering of the crystal structure due to the ion implantation. In the temperature range 400-700 Deg C the lines from InP band gap (1.34 eV) and conductance band-spin-orbit splitting valence subband (1.44 eV) have been observed due to the recovery of the crystal structure. In the photoreflectance spectra of a 800 Deg C annealed sample the Franz-Keldysh oscillations have been observed, which can be an evidence in favour of the dopant activation. Carrier concentration calculated from the period of Franz-Keldysh oscillations was equal to 2.2 x 10 16 cm -3 [ru

  16. Room-temperature annealing of Si implantation damage in InP

    International Nuclear Information System (INIS)

    Akano, U.G.; Mitchell, I.V.

    1991-01-01

    Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

  17. Amorphization of Ge and InP studied using nuclear hyperfine methods

    International Nuclear Information System (INIS)

    Byrne, A.P.; Bezakova, E.; Glover, C.J.; Ridgway, M.C.

    1999-01-01

    The ion beam amorphization of InP and Ge has been studied using the Perturbed Angular Correlation (PAC) technique. Semiconductor samples were preimplanted with the radioisotope 111 In using a direct production-recoil implantation method and beams from the ANU Heavy-ion Facility. Following annealing samples were amorphized using Ge beams with doses between 2 x 10 12 ion/cm 2 and 5000 x 10 12 ion/cm 2 . For InP the PAC spectra identified three distinct regimes, crystalline, disordered and amorphous environments, with a smooth transition observed as a function of dose. The dose dependence of the relative fractions of the individual probe environments has been determined. A direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. The PAC method compares favorably with other methods used in its ability to differentiate changes at high dose. The results for InP will be compared with those in Ge. The implantation method will be discussed, as will developments in the establishment of a dedicated facility for the implantation of radioisotopes

  18. Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

    International Nuclear Information System (INIS)

    Steele, J A; Lewis, R A; Sirbu, L; Enachi, M; Tiginyanu, I M; Skuratov, V A

    2015-01-01

    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index n eff and compared to effective media approximations. (invited article)

  19. Selective-area vapour-liquid-solid growth of InP nanowires

    International Nuclear Information System (INIS)

    Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J

    2009-01-01

    A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO 2 mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO 2 mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

  20. Selective-area vapour-liquid-solid growth of InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J, E-mail: dan.dalacu@nrc-cnrc.gc.c [Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6 (Canada)

    2009-09-30

    A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO{sub 2} mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO{sub 2} mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

  1. Facile consecutive solvothermal growth of highly fluorescent InP/ZnS core/shell quantum dots using a safer phosphorus source.

    Science.gov (United States)

    Byun, Ho-June; Song, Woo-Seuk; Yang, Heesun

    2011-06-10

    The work presents a facile, stepwise synthetic approach for the production of highly fluorescent InP/ZnS core/shell quantum dots (QDs) by using a safer phosphorus (P) precursor. First, InP quantum dots (QDs) were solvothermally prepared at 180 °C for 24 h by using a P source of P(N(CH(3))(2))(3). The as-grown InP QDs were consecutively placed in another solvothermal condition for ZnS shell overcoating. In contrast to the almost non-fluorescent InP QDs, due to their highly defective surface states, the ZnS-coated InP QDs were highly fluorescent as a result of effective surface passivation. After the shell growth, the resulting InP/ZnS core/shell QDs were subjected to a size-sorting processing, by which red- to green-emitting QDs with quantum yields (QYs) of 24-60% were produced. Solvothermal shell growth parameters such as the reaction time and Zn/In solution concentration ratio were varied and optimized toward the highest QYs of core/shell QDs.

  2. Facile consecutive solvothermal growth of highly fluorescent InP/ZnS core/shell quantum dots using a safer phosphorus source

    International Nuclear Information System (INIS)

    Byun, Ho-June; Song, Woo-Seuk; Yang, Heesun

    2011-01-01

    The work presents a facile, stepwise synthetic approach for the production of highly fluorescent InP/ZnS core/shell quantum dots (QDs) by using a safer phosphorus (P) precursor. First, InP quantum dots (QDs) were solvothermally prepared at 180 deg. C for 24 h by using a P source of P(N(CH 3 ) 2 ) 3 . The as-grown InP QDs were consecutively placed in another solvothermal condition for ZnS shell overcoating. In contrast to the almost non-fluorescent InP QDs, due to their highly defective surface states, the ZnS-coated InP QDs were highly fluorescent as a result of effective surface passivation. After the shell growth, the resulting InP/ZnS core/shell QDs were subjected to a size-sorting processing, by which red- to green-emitting QDs with quantum yields (QYs) of 24-60% were produced. Solvothermal shell growth parameters such as the reaction time and Zn/In solution concentration ratio were varied and optimized toward the highest QYs of core/shell QDs.

  3. Facile consecutive solvothermal growth of highly fluorescent InP/ZnS core/shell quantum dots using a safer phosphorus source

    Science.gov (United States)

    Byun, Ho-June; Song, Woo-Seuk; Yang, Heesun

    2011-06-01

    The work presents a facile, stepwise synthetic approach for the production of highly fluorescent InP/ZnS core/shell quantum dots (QDs) by using a safer phosphorus (P) precursor. First, InP quantum dots (QDs) were solvothermally prepared at 180 °C for 24 h by using a P source of P(N(CH3)2)3. The as-grown InP QDs were consecutively placed in another solvothermal condition for ZnS shell overcoating. In contrast to the almost non-fluorescent InP QDs, due to their highly defective surface states, the ZnS-coated InP QDs were highly fluorescent as a result of effective surface passivation. After the shell growth, the resulting InP/ZnS core/shell QDs were subjected to a size-sorting processing, by which red- to green-emitting QDs with quantum yields (QYs) of 24-60% were produced. Solvothermal shell growth parameters such as the reaction time and Zn/In solution concentration ratio were varied and optimized toward the highest QYs of core/shell QDs.

  4. Facile consecutive solvothermal growth of highly fluorescent InP/ZnS core/shell quantum dots using a safer phosphorus source

    Energy Technology Data Exchange (ETDEWEB)

    Byun, Ho-June; Song, Woo-Seuk; Yang, Heesun, E-mail: hyang@hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)

    2011-06-10

    The work presents a facile, stepwise synthetic approach for the production of highly fluorescent InP/ZnS core/shell quantum dots (QDs) by using a safer phosphorus (P) precursor. First, InP quantum dots (QDs) were solvothermally prepared at 180 deg. C for 24 h by using a P source of P(N(CH{sub 3}){sub 2}){sub 3}. The as-grown InP QDs were consecutively placed in another solvothermal condition for ZnS shell overcoating. In contrast to the almost non-fluorescent InP QDs, due to their highly defective surface states, the ZnS-coated InP QDs were highly fluorescent as a result of effective surface passivation. After the shell growth, the resulting InP/ZnS core/shell QDs were subjected to a size-sorting processing, by which red- to green-emitting QDs with quantum yields (QYs) of 24-60% were produced. Solvothermal shell growth parameters such as the reaction time and Zn/In solution concentration ratio were varied and optimized toward the highest QYs of core/shell QDs.

  5. Quantum Instantons and Quantum Chaos

    OpenAIRE

    Jirari, H.; Kröger, H.; Luo, X. Q.; Moriarty, K. J. M.; Rubin, S. G.

    1999-01-01

    Based on a closed form expression for the path integral of quantum transition amplitudes, we suggest rigorous definitions of both, quantum instantons and quantum chaos. As an example we compute the quantum instanton of the double well potential.

  6. Quantum metrology

    International Nuclear Information System (INIS)

    Xiang Guo-Yong; Guo Guang-Can

    2013-01-01

    The statistical error is ineluctable in any measurement. Quantum techniques, especially with the development of quantum information, can help us squeeze the statistical error and enhance the precision of measurement. In a quantum system, there are some quantum parameters, such as the quantum state, quantum operator, and quantum dimension, which have no classical counterparts. So quantum metrology deals with not only the traditional parameters, but also the quantum parameters. Quantum metrology includes two important parts: measuring the physical parameters with a precision beating the classical physics limit and measuring the quantum parameters precisely. In this review, we will introduce how quantum characters (e.g., squeezed state and quantum entanglement) yield a higher precision, what the research areas are scientists most interesting in, and what the development status of quantum metrology and its perspectives are. (topical review - quantum information)

  7. Quantum Distinction: Quantum Distinctiones!

    OpenAIRE

    Zeps, Dainis

    2009-01-01

    10 pages; How many distinctions, in Latin, quantum distinctiones. We suggest approach of anthropic principle based on anthropic reference system which should be applied equally both in theoretical physics and in mathematics. We come to principle that within reference system of life subject of mathematics (that of thinking) should be equated with subject of physics (that of nature). For this reason we enter notions of series of distinctions, quantum distinction, and argue that quantum distinct...

  8. Cytotoxicity of InP/ZnS quantum dots related to reactive oxygen species generation

    Science.gov (United States)

    Chibli, Hicham; Carlini, Lina; Park, Soonhyang; Dimitrijevic, Nada M.; Nadeau, Jay L.

    2011-06-01

    Indium phosphide (InP) quantum dots (QDs) have emerged as a presumably less hazardous alternative to cadmium-based particles, but their cytotoxicity has not been well examined. Although their constituent elements are of very low toxicity to cells in culture, they nonetheless exhibit phototoxicity related to generation of reactive oxygen species by excited electrons and/or holes interacting with water and molecular oxygen. Using spin-trap electron paramagnetic resonance (EPR) spectroscopy and reporter assays, we find a considerable amount of superoxide and a small amount of hydroxyl radical formed under visible illumination of biocompatible InP QDs with a single ZnS shell, comparable to what is seen with CdTe. A double thickness shell reduces the reactive oxygen species concentration approximately two-fold. Survival assays in five cell lines correspondingly indicate a distinct reduction in toxicity with the double-shell InP QDs. Toxicity varies significantly across cell lines according to the efficiency of uptake, being overall significantly less than what is seen with CdTe or CdSe/ZnS. This indicates that InP QDs are a useful alternative to cadmium-containing QDs, while remaining capable of electron-transfer processes that may be undesirable or which may be exploited for photosensitization applications.

  9. Cytotoxicity of InP/ZnS quantum dots related to reactive oxygen species generation.

    Energy Technology Data Exchange (ETDEWEB)

    Chibli, H.; Carlini, L.; Park, S.; Dimitrijevic, N. M.; Nadeau, J. L. (Center for Nanoscale Materials); ( CSE); (McGill Univ.)

    2011-01-01

    Indium phosphide (InP) quantum dots (QDs) have emerged as a presumably less hazardous alternative to cadmium-based particles, but their cytotoxicity has not been well examined. Although their constituent elements are of very low toxicity to cells in culture, they nonetheless exhibit phototoxicity related to generation of reactive oxygen species by excited electrons and/or holes interacting with water and molecular oxygen. Using spin-trap electron paramagnetic resonance (EPR) spectroscopy and reporter assays, we find a considerable amount of superoxide and a small amount of hydroxyl radical formed under visible illumination of biocompatible InP QDs with a single ZnS shell, comparable to what is seen with CdTe. A double thickness shell reduces the reactive oxygen species concentration approximately two-fold. Survival assays in five cell lines correspondingly indicate a distinct reduction in toxicity with the double-shell InP QDs. Toxicity varies significantly across cell lines according to the efficiency of uptake, being overall significantly less than what is seen with CdTe or CdSe/ZnS. This indicates that InP QDs are a useful alternative to cadmium-containing QDs, while remaining capable of electron-transfer processes that may be undesirable or which may be exploited for photosensitization applications.

  10. High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 um Tunnel Injection Laser

    KAUST Repository

    Bhowmick, Sishir; Baten, Md Zunaid; Bhattacharya, Pallab K.; Frost, Thomas; Ooi, Boon S.

    2014-01-01

    The characteristics of 1.55 ? InAs self-organized quantum-dot lasers, grown on (001) InP substrates by molecular beam epitaxy, have been investigated. Modulation doping of the dots with holes and tunnel injection of electrons have been incorporated

  11. InP tunnel junction for InGaAs/InP tandem solar cells

    Science.gov (United States)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  12. Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

    International Nuclear Information System (INIS)

    Hu Fengqin; Ran Yuliang; Zhou Zhuan; Gao Mingyuan

    2006-01-01

    Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection

  13. Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia; Li, Junshuai; Wu, Yao; Li, Bang; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 (China)

    2016-02-15

    The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski-Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube-root dependence on the excitation power is observed, suggesting a type-II band alignment. The peak position of dots initially red-shifts and then blue-shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

    Science.gov (United States)

    Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

    2015-06-01

    The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research. © 2015 The Authors. Published under the terms of the CC BY 4.0 license.

  15. Facilitated preparation of bioconjugatable zwitterionic quantum dots using dual-lipid encapsulation.

    Science.gov (United States)

    Shrake, Robert; Demillo, Violeta G; Ahmadiantehrani, Mojtaba; Zhu, Xiaoshan; Publicover, Nelson G; Hunter, Kenneth W

    2015-01-01

    Zwitterionic quantum dots prepared through incorporated zwitterionic ligands on quantum dot surfaces, are being paid significant attention in biomedical applications because of their excellent colloidal stability across a wide pH and ionic strength range, antifouling surface, good biocompatibility, etc. In this work, we report a dual-lipid encapsulation approach to prepare bioconjugatable zwitterionic quantum dots using amidosulfobetaine-16 lipids, dipalmitoyl-sn-glycero-3-phosphoethanolamine lipids with functional head groups, and CuInS2/ZnS quantum dots in a tetrahydrofuran/methanol/water solvent system with sonication. Amidosulfobetaine-16 is a zwitterionic lipid and dipalmitoyl-sn-glycero-3-phosphoethanolamine, with its functional head, provides bioconjugation capability. Under sonication, tetrahydrofuran/methanol containing amidosulfobetaine-16, dipalmitoyl-sn-glycero-3-phosphoethanolamine, and hydrophobic quantum dots are dispersed in water to form droplets. Highly water-soluble tetrahydrofuran/methanol in droplets is further displaced by water, which induces the lipid self-assembling on hydrophobic surface of quantum dots and thus forms water soluble zwitterionic quantum dots. The prepared zwitterionic quantum dots maintain colloidal stability in aqueous solutions with high salinity and over a wide pH range. They are also able to be conjugated with biomolecules for bioassay with minimal nonspecific binding. Copyright © 2014 Elsevier Inc. All rights reserved.

  16. Quantum walks, quantum gates, and quantum computers

    International Nuclear Information System (INIS)

    Hines, Andrew P.; Stamp, P. C. E.

    2007-01-01

    The physics of quantum walks on graphs is formulated in Hamiltonian language, both for simple quantum walks and for composite walks, where extra discrete degrees of freedom live at each node of the graph. It is shown how to map between quantum walk Hamiltonians and Hamiltonians for qubit systems and quantum circuits; this is done for both single-excitation and multiexcitation encodings. Specific examples of spin chains, as well as static and dynamic systems of qubits, are mapped to quantum walks, and walks on hyperlattices and hypercubes are mapped to various gate systems. We also show how to map a quantum circuit performing the quantum Fourier transform, the key element of Shor's algorithm, to a quantum walk system doing the same. The results herein are an essential preliminary to a Hamiltonian formulation of quantum walks in which coupling to a dynamic quantum environment is included

  17. Quantum memory Quantum memory

    Science.gov (United States)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  18. Coherent quantum cascade laser micro-stripe arrays

    Directory of Open Access Journals (Sweden)

    G. M. de Naurois

    2011-09-01

    Full Text Available We have fabricated InP-based coherent quantum cascade laser micro-stripe arrays. Phase-locking is provided by evanescent coupling between adjacent stripes. Stripes are buried into semi-insulating iron doped InP. Lasing at room temperature is obtained at 8.4μm for stripe arrays comprising up to 16 emitters. Pure supermode emission is demonstrated via farfield measurements and simulations. The farfield pattern shows a dual-lobe emission, corroborating the predicted phase-locked antisymmetric supermode emission.

  19. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Energy Technology Data Exchange (ETDEWEB)

    Biermann, K.

    2007-06-28

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  20. Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

    Directory of Open Access Journals (Sweden)

    Ashish Kumar

    2012-03-01

    Full Text Available We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP relaxation and Elliott-Yafet (EY relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction and structural inversion asymmetry (Rashba spin-orbit interaction. The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

  1. Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

    Science.gov (United States)

    Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

    2017-08-04

    We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

  2. Molecular beam epitaxy of InxGa1-xAs on InP (100) substrates

    International Nuclear Information System (INIS)

    Dvoryankina, G.G.; Dvoryankin, V.F.; Petrov, A.G.; Kudryashov, A.A.; Khusid, L.B.

    1991-01-01

    Heteroepitaxy layers of In x Ga 1-x As in the wide field of compositions (x=0.2-0.8) of 0.2-2.0 μm thick on (100) InP substrates were grown using the methods of epitaxy from molecular beams. Structure, surface morphology and electric properties of layers in relation to their thick and composition were investigated. It was shown that the quality of In x Ga 1-x As layers on (100) InP was more sensitive to tensile strain than compressive strain. Different mechanisms of scattering of free electrons in layers of In x Ga 1-x As(x∼=0.53) on (101) InP were considered

  3. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

    Science.gov (United States)

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-12-17

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

  4. Effect of Fe inter-diffusion on properties of InP layers grown with addition of RE elements

    International Nuclear Information System (INIS)

    Prochazkova, O.; Zavadil, J.; Zdansky, K.

    2005-01-01

    This contribution reports the redistribution behaviour of Fe during the growth of InP layers from liquid phase with addition of some rare earth elements on semi-insulating InP:Fe substrates. We have studied the influence of different rare earths on the Fe diffusion into InP layer and compared it with the phenomenon of an extraction of iron from Fe doped materials into adjacent layers doped by Zn, Cd and Be, reported recently. In the case of Tm addition a conversion of electrical conductivity of InP layer to semi-insulating as a consequence of Fe diffusion has been observed while no significant Fe inter-diffusion has been confirmed in the presence of other investigated rare earth additions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    International Nuclear Information System (INIS)

    Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

  6. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

    Science.gov (United States)

    Kelrich, A.; Dubrovskii, V. G.; Calahorra, Y.; Cohen, S.; Ritter, D.

    2015-02-01

    We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.

  7. Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

    Science.gov (United States)

    Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

    2018-04-01

    We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

  8. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

    Science.gov (United States)

    Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

    2017-12-01

    X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

  9. Quantum stochastics

    CERN Document Server

    Chang, Mou-Hsiung

    2015-01-01

    The classical probability theory initiated by Kolmogorov and its quantum counterpart, pioneered by von Neumann, were created at about the same time in the 1930s, but development of the quantum theory has trailed far behind. Although highly appealing, the quantum theory has a steep learning curve, requiring tools from both probability and analysis and a facility for combining the two viewpoints. This book is a systematic, self-contained account of the core of quantum probability and quantum stochastic processes for graduate students and researchers. The only assumed background is knowledge of the basic theory of Hilbert spaces, bounded linear operators, and classical Markov processes. From there, the book introduces additional tools from analysis, and then builds the quantum probability framework needed to support applications to quantum control and quantum information and communication. These include quantum noise, quantum stochastic calculus, stochastic quantum differential equations, quantum Markov semigrou...

  10. Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

    Science.gov (United States)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2018-01-01

    Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

  11. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  12. Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

    Science.gov (United States)

    Tedeschi, D; De Luca, M; Granados Del Águila, A; Gao, Q; Ambrosio, G; Capizzi, M; Tan, H H; Christianen, P C M; Jagadish, C; Polimeni, A

    2016-10-12

    The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 (m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

  13. Synthesis and properties of ultra-long InP nanowires on glass.

    Science.gov (United States)

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-16

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  14. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  15. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  16. Quantum Computing

    OpenAIRE

    Scarani, Valerio

    1998-01-01

    The aim of this thesis was to explain what quantum computing is. The information for the thesis was gathered from books, scientific publications, and news articles. The analysis of the information revealed that quantum computing can be broken down to three areas: theories behind quantum computing explaining the structure of a quantum computer, known quantum algorithms, and the actual physical realizations of a quantum computer. The thesis reveals that moving from classical memor...

  17. Quantum Malware

    OpenAIRE

    Wu, Lian-Ao; Lidar, Daniel A.

    2005-01-01

    When quantum communication networks proliferate they will likely be subject to a new type of attack: by hackers, virus makers, and other malicious intruders. Here we introduce the concept of "quantum malware" to describe such human-made intrusions. We offer a simple solution for storage of quantum information in a manner which protects quantum networks from quantum malware. This solution involves swapping the quantum information at random times between the network and isolated, distributed an...

  18. 75 GHz InP DHBT power amplifier based on two-stacked transistors

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

    2017-01-01

    In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

  19. Topography of InP surface bombarded by O2+ ion beam

    International Nuclear Information System (INIS)

    Sun Zhaoqi

    1997-01-01

    The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

  20. Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.

    1985-01-01

    This Rapid Communication describes several thermally or electronically stimulated defect reactions involving the dominant deep centers in low-temperature (25--300 K) electron-irradiated InP. Some of these reactions result in an increased concentration of the centers, thereby revealing the existence of a secondary production mechanism of the related defects. Low-energy irradiations allows one to select the type of the ejected atom (P) and gives direct evidence that only a phosphorus species, interstitial or vacancy, is involved in the creation-reaction-annealing events

  1. Origin of the main deep electron trap in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1986-01-01

    The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

  2. Characterization of an anion antisite defect as a deep double donor in InP

    International Nuclear Information System (INIS)

    Ando, K.; Katsui, A.; Jeon, D.Y.; Watkins, G.D.; Gislason, H.P.

    1989-01-01

    A study of optically detected magnetic resonance (ODMR) on the anion antisite defect in electron irradiated InP has been made by monitoring the magnetic circular dichroism (MCD), combined with DLTS experiment. Comparison of the ODMR and DLTS results reveals that the intrinsic anion antisite defect acts as a deep double-donor in the gap. The first ionization (D o /D 1+ ) process occurs both in thermal and optical excitation as a mid-gap electron trap, detected by DLTS and DLOS experiment. (author) 12 refs., 6 figs

  3. Mechanical properties of pure and doped InP single crystals under concentrated loading

    International Nuclear Information System (INIS)

    Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

    1997-01-01

    The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

  4. InP tunnel junctions for InP/InGaAs tandem solar cells

    Science.gov (United States)

    Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

    1996-01-01

    We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

  5. Polarization dependence of two-photon absorption coefficient and nonlinear susceptibility tensor in InP

    International Nuclear Information System (INIS)

    Matsusue, Toshio; Bando, Hiroyuki; Fujita, Shoichi; Takayama, Yusuke

    2011-01-01

    Two-photon absorption (TPA) effect in (001) InP is investigated using fs laser. Its dependences on wavelength and polarization are clarified by single and double beam methods with linearly polarized lights. Characteristic features are revealed and discussed with scaling law, crystal bonding and mutual relation of polarizations for double beams. The results are successfully analyzed on the basis of the third-order susceptibility tensor for comprehensive understanding of TPA effect at any polarization geometry. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Monte Carlo investigation of minority electron transport in InP

    International Nuclear Information System (INIS)

    Osman, M.A.; Grubin, H.L.

    1989-01-01

    This paper discusses the investigation of the transport of minority electrons in p-type InP for acceptor doping level of 10 18 cm 3 using Monte Carlo procedures. It is found that the velocity of minority electrons are significantly lower than that of majority electrons for fields below 15 kV/cm and slightly higher at higher fields. The study shows that the interaction between the electrons and majority holes leads to reducing the mobility of electrons from 2000 cm 2 /Vs to 1500 cm 2 /Vs

  7. Growth of Self-Catalyzed InP Nanowires by Metalorganic Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Lv Xiao-Long; Zhang Xia; Yan Xin; Liu Xiao-Long; Cui Jian-Gong; Li Jun-Shuai; Huang Yong-Qing; Ren Xiao-Min

    2012-01-01

    The fabrication of self-catalyzed InP nanowires (NWs) is investigated under different growth conditions. Indium droplets induced by surface reconstruction act as nucleation sites for NW growth. Vertical standing NWs with uniform cross sections are obtained under optimized conditions. It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible. The results indicate that the droplet acts as an adatom collector rather than a catalyst. Moreover, the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds

  8. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

  9. Nuclear geophysics in space and atmospheric reserch at INPE/BRAZIl

    International Nuclear Information System (INIS)

    Nordemann, D.J.R.; Pereira, E.B.; Marinho, E.V.A.; Sircilli Neto, F.

    1986-05-01

    During the last years, INPE's research in Nuclear Geophysics has developed in fields of interest to the Institute, the scientific community and the society in general. In the space research field it may be considered as a contribution to the history of meteorite falls in our planet or possible collision with big meteorites which may have been the cause of important effects such as biological extinction and extraterrestrial matter gathering. In the atmospheric research field, spatial and temporal variations of radon measurements in the lower atmosphere allow correlations from micrometeorology to worlwide scale through mesoscale, in the interpretation of phenomena which deal with the dynamics of air masses. (Author) [pt

  10. Integrated cloud infrastructure of the LIT JINR, PE “NULITS” and INP's Astana branch

    Directory of Open Access Journals (Sweden)

    Mazhitova Yelena

    2018-01-01

    Full Text Available The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity “Nazarbayev University Library and IT services” (PE “NULITS” Autonomous Education Organization “Nazarbayev University” (AO NU and The Institute of Nuclear Physics’ (INP's Astana branch.

  11. Quantumness beyond quantum mechanics

    International Nuclear Information System (INIS)

    Sanz, Ángel S

    2012-01-01

    Bohmian mechanics allows us to understand quantum systems in the light of other quantum traits than the well-known ones (coherence, diffraction, interference, tunnelling, discreteness, entanglement, etc.). Here the discussion focusses precisely on two of these interesting aspects, which arise when quantum mechanics is thought within this theoretical framework: the non-crossing property, which allows for distinguishability without erasing interference patterns, and the possibility to define quantum probability tubes, along which the probability remains constant all the way. Furthermore, taking into account this hydrodynamic-like description as a link, it is also shown how this knowledge (concepts and ideas) can be straightforwardly transferred to other fields of physics (for example, the transmission of light along waveguides).

  12. All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

    2013-01-01

    Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3.......Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3....

  13. Assessment of the systemic distribution of a bioconjugated anti-Her2 magnetic nanoparticle in a breast cancer model by means of magnetic resonance imaging

    Energy Technology Data Exchange (ETDEWEB)

    Huerta-Núñez, L. F. E., E-mail: lidi-huerta@hotmail.com [Universidad del Ejercito y FAM/EMGS-Laboratorio Multidisciplinario de Investigación (Mexico); Villanueva-Lopez, G. Cleva, E-mail: villanuevacleva3@gmail.com [Instituto Politécnico Nacional-Escuela Superior de Medicina-Sección Investigación y Posgrado (Mexico); Morales-Guadarrama, A., E-mail: amorales@ci3m.mx [Centro Nacional de Investigacion en Imagenologia e Instrumentacion Medica-Universidad Autónoma (Mexico); Soto, S., E-mail: cuadrosdobles@hotmail.com; López, J., E-mail: jaimelocr@hotmail.com; Silva, J. G., E-mail: gabrielsilva173@gmail.com [Universidad del Ejercito y FAM/EMGS-Laboratorio Multidisciplinario de Investigación (Mexico); Perez-Vielma, N., E-mail: nadiampv@gmail.com [Instituto Politécnico Nacional - Centro Interdisciplinario de Ciencias de la Salud Unidad Santo Tomás (CICS-UST) (Mexico); Sacristán, E., E-mail: esacristan@ci3m.mx [Centro Nacional de Investigacion en Imagenologia e Instrumentacion Medica-Universidad Autónoma (Mexico); Gudiño-Zayas, Marco E., E-mail: gudino@unam.mx [UNAM, Departamento de Medicina Experimental, Facultad de Medicina (Mexico); González, C. A., E-mail: cgonzalezd@ipn.mx [Universidad del Ejercito y FAM/EMGS-Laboratorio Multidisciplinario de Investigación (Mexico)

    2016-09-15

    The aim of this study was to determine the systemic distribution of magnetic nanoparticles of 100 nm diameter (MNPs) coupled to a specific monoclonal antibody anti-Her2 in an experimental breast cancer (BC) model. The study was performed in two groups of Sprague–Dawley rats: control (n = 6) and BC chemically induced (n = 3). Bioconjugated “anti-Her2-MNPs” were intravenously administered, and magnetic resonance imaging (MRI) monitored its systemic distribution at seven times after administration. Non-heme iron presence associated with the location of the bioconjugated anti-Her2-MNPs in splenic, hepatic, cardiac and tumor tissues was detected by Perl’s Prussian blue (PPB) stain. Optical density measurements were used to semiquantitatively determine the iron presence in tissues on the basis of a grayscale values integration of T1 and T2 MRI sequence images. The results indicated a delayed systemic distribution of MNPs in cancer compared to healthy conditions with a maximum concentration of MNPs in cancer tissue at 24 h post-infusion.

  14. Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs MQW`s on InP

    Energy Technology Data Exchange (ETDEWEB)

    Jones, E.D.; Tigges, C.P. [Sandia National Labs., Albuquerque, NM (United States); Kotera, N. [Kyushu Inst. of Tech., Iizuka, Fukuoka (Japan); Mishima, T.; Nakamura, H. [Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.; Miura, N. [Univ. of Tokyo (Japan). Inst. for Solid State Physics

    1996-12-31

    A knowledge of the energy-band energies and masses are important parameters for the design of semiconductor lasers and light-emitting diodes. The authors present results of a magnetoluminescence study on n-type (N{sub 2D} {approximately} 1 {times} 10{sup 12} cm{sup {minus}2}) InGaAs/InAlAs multiple quantum wells lattice matched to InP. From an analysis of low-temperature magnetoluminescence data, a simultaneous measurement of the inplane conduction and valence-band masses is made. They find, assuming parabolic bands, that the conduction and valence-band masses are respectively m{sub c} {approx} 0.069m{sub 0} and m{sub v} {approx} 0.061m{sub 0}, where m{sub 0} is the free electron mass. Fitting a nonparabolic conduction-band dispersion curve to the data yields a zone-center mass m{sub c} {approx} 0.056m{sub 0} and m{sub v} {approximately} 0.102m{sub 0}.

  15. Nonlinear Dynamics In Quantum Physics -- Quantum Chaos and Quantum Instantons

    OpenAIRE

    Kröger, H.

    2003-01-01

    We discuss the recently proposed quantum action - its interpretation, its motivation, its mathematical properties and its use in physics: quantum mechanical tunneling, quantum instantons and quantum chaos.

  16. Mn-doped near-infrared quantum dots as multimodal targeted probes for pancreatic cancer imaging

    Science.gov (United States)

    Yong, Ken-Tye

    2009-01-01

    This work presents a novel approach to producing manganese (Mn)-doped quantum dots (Mnd-QDs) emitting in the near-infrared (NIR). Surface functionalization of Mnd-QDs with lysine makes them stably disperse in aqueous media and able to conjugate with targeting molecules. The nanoparticles were structurally and compositionally characterized and maintained a high photoluminescence quantum yield and displayed paramagnetism in water. The receptor-mediated delivery of bioconjugated Mnd-QDs into pancreatic cancer cells was demonstrated using the confocal microscopy technique. Cytotoxicity of Mnd-QDs on live cells has been evaluated. The NIR-emitting characteristic of the QDs has been exploited to acquire whole animal body imaging with high contrast signals. In addition, histological and blood analysis of mice have revealed that no long-term toxic effects arise from MnD-QDs. These studies suggest multimodal Mnd-QDs have the potentials as probes for early pancreatic cancer imaging and detection.

  17. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

    Science.gov (United States)

    Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

    2018-06-01

    InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

  18. Insulated InP (100) semiconductor by nano nucleus generation in pure water

    Science.gov (United States)

    Ghorab, Farzaneh; Es'haghi, Zarrin

    2018-01-01

    Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

  19. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    International Nuclear Information System (INIS)

    Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

    2010-01-01

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  20. Ab initio electronic band structure calculation of InP in the wurtzite phase

    Science.gov (United States)

    Dacal, Luis C. O.; Cantarero, Andrés

    2011-05-01

    We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a=0.4150 nm, c=0.6912 nm, and an internal parameter u=0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.

  1. Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

    Science.gov (United States)

    Chauvin, Nicolas; Mavel, Amaury; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel; Machon, Denis

    2016-05-11

    The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

  2. Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

    Science.gov (United States)

    Bhusal, L.; Freundlich, A.

    2007-01-01

    Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

  3. Dopant-free twinning superlattice formation in InSb and InP nanowires

    International Nuclear Information System (INIS)

    Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

    2017-01-01

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. The design and manufacture of a notch structure for a planar InP Gunn diode

    International Nuclear Information System (INIS)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

    2013-01-01

    A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm–20 μm) and diameter (40 μm–60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA–397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

    Science.gov (United States)

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

    2017-11-25

    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  6. Phosphorus-hydrogen complexes in LEC-grown InP

    International Nuclear Information System (INIS)

    Ulrici, W.; Kwasniewski, A.; Czupalla, M.; Neubert, M.

    2005-01-01

    In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm -1 . All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm -1 is due to a single hydrogen atom bonded to P in an indium vacancy (V In ) and that the line at 2315.6 cm -1 is due to the complex of four P-H bonds in an V In . In InP:H:D, this V In H 4 complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V In H n D m complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Phosphorus-hydrogen complexes in LEC-grown InP

    Energy Technology Data Exchange (ETDEWEB)

    Ulrici, W. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kwasniewski, A.; Czupalla, M.; Neubert, M. [Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

    2005-03-01

    In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm{sup -1}. All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm{sup -1} is due to a single hydrogen atom bonded to P in an indium vacancy (V{sub In}) and that the line at 2315.6 cm{sup -1} is due to the complex of four P-H bonds in an V{sub In}. In InP:H:D, this V{sub In}H{sub 4} complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V{sub In}H{sub n}D{sub m} complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. The analytical center of INP - experience of becoming prospect of development

    International Nuclear Information System (INIS)

    Kadyrzhanov, K.K.; Kozhakhmetov, S.K.

    2004-01-01

    Full text: In 2001 in INP NNC RK the Analytical center has been organized as separate structural division. The primary goal of the Analytical center is all-round use of the scientific and technical potential, which has been saved up in INP NNC RK for the organization and carrying out of researches, actual for, first of all for the domestic companies, scientific institutes and the foreign companies working in Kazakhstan. In the report data on the equipment with which the Analytical center for performance of works is equipped are resulted. For these purposes the grants of the international organizations and funds are involved. For example, about two years it is maintained universal X-ray diffractometer Brucker D8 Advance got with support of U.S. CRDF (the project *KR2-993). Under the project *KAR2-1036-AL-03 the same fund in current of 2005 delivery of the specialized equipment for test of corrosion resistance of materials will be made. The site on preparation of materials in created and equipped with the specialized equipment. In the report results, both fundamental works, and data on the applied works executed with various partners - National Atomic Company 'KazAtomProm', Ulba Metallurgical Plant, 'Tengizchevroil' Oil Company, Pharmacological Company named 'B-clay' are discussed, etc. In the report the basic directions of the further development of works and expansions of geography of cooperation are formulated

  9. Dopant-free twinning superlattice formation in InSb and InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

    2017-11-15

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Calculation of the Huang-Rhys parameter in spherical quantum dots: the optical deformation potential effect

    International Nuclear Information System (INIS)

    Hamma, M; Miranda, R P; Vasilevskiy, M I; Zorkani, I

    2007-01-01

    An accurate calculation of the exciton-phonon interaction matrix elements and Huang-Rhys parameter for nearly spherical nanocrystals (NCs) of polar semiconductor materials is presented. The theoretical approach is based on a continuum lattice dynamics model and the effective mass approximation for electronic states in the NCs. A strong confinement regime is considered for both excitons and optical phonons, taking into account both the Froehlich-type and optical deformation potential (ODP) mechanisms of the exciton-phonon interaction. The effects of exchange electron-hole interaction and possible hexagonal crystal structure of the underlying material are also taken into account. The theory is applied to CdSe and InP quantum dots. It is shown that the ODP mechanism, almost unimportant for CdSe, dominates the exciton-phonon coupling in small InP dots. The effect of the non-diagonal interaction, not included in the Huang-Rhys parameter, is briefly discussed

  11. Quantum mechanics

    International Nuclear Information System (INIS)

    Anon.

    1990-01-01

    The book is on quantum mechanics. The emphasis is on the basic concepts and the methodology. The chapters include: Breakdown of classical concepts; Quantum mechanical concepts; Basic postulates of quantum mechanics; solution of problems in quantum mechanics; Simple harmonic oscillator; and Angular Momentum

  12. Quantum matter

    International Nuclear Information System (INIS)

    Buechler, Hans Peter; Calcarco, Tommaso; Dressel, Martin

    2008-01-01

    The following topics are dealt with: Artificial atoms and molecules, tailored from solids, fractional flux quanta, molecular magnets, controlled interaction in quantum gases, the theory of quantum correlations in mott matter, cold gases, and mesoscopic systems, Bose-Einstein condensates on the chip, on the route to the quantum computer, a quantum computer in diamond. (HSI)

  13. Quantum fluctuations

    International Nuclear Information System (INIS)

    Reynaud, S.; Giacobino, S.; Zinn-Justin, J.

    1997-01-01

    This course is dedicated to present in a pedagogical manner the recent developments in peculiar fields concerned by quantum fluctuations: quantum noise in optics, light propagation through dielectric media, sub-Poissonian light generated by lasers and masers, quantum non-demolition measurements, quantum electrodynamics applied to cavities and electrical circuits involving superconducting tunnel junctions. (A.C.)

  14. Quantum radar

    CERN Document Server

    Lanzagorta, Marco

    2011-01-01

    This book offers a concise review of quantum radar theory. Our approach is pedagogical, making emphasis on the physics behind the operation of a hypothetical quantum radar. We concentrate our discussion on the two major models proposed to date: interferometric quantum radar and quantum illumination. In addition, this book offers some new results, including an analytical study of quantum interferometry in the X-band radar region with a variety of atmospheric conditions, a derivation of a quantum radar equation, and a discussion of quantum radar jamming.This book assumes the reader is familiar w

  15. Water-mediated green synthesis of PbS quantum dot and its glutathione and biotin conjugates for non-invasive live cell imaging

    Science.gov (United States)

    Vijaya Bharathi, M.; Maiti, Santanu; Sarkar, Bidisha; Ghosh, Kaustab; Paira, Priyankar

    2018-03-01

    This study addresses the cellular uptake of nanomaterials in the field of bio-applications. In the present study, we have synthesized water-soluble lead sulfide quantum dot (PbS QD) with glutathione and 3-MPA (mercaptopropionic acid) as the stabilizing ligand using a green approach. 3-MPA-capped QDs were further modified with streptavidin and then bound to biotin because of its high conjugation efficiency. Labelling and bio-imaging of cells with these bio-conjugated QDs were evaluated. The bright red fluorescence from these types of QDs in HeLa cells makes these materials suitable for deep tissue imaging.

  16. Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

    DEFF Research Database (Denmark)

    Zubov, F.I.; Semenova, Elizaveta; Kulkova, Irina

    2017-01-01

    We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized as a waveg......We report on high temperature stability of a near-1.5 µm laser synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer were used as an active region of the laser. An InGaAsP quaternary alloy having the bandgap energy of 1.15 eV was utilized...

  17. Effective surface passivation of InP nanowires by atomic-layer-deposited Al2O3 with POx interlayer

    NARCIS (Netherlands)

    Black, L.E.; Cavalli, A.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.; Kessels, W.M.M.

    2017-01-01

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following

  18. Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires

    Science.gov (United States)

    Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

    2018-06-01

    Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 × 1011 to 5 × 1013 p cm‑2. It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

  19. XRD Investigation of the relaxation of InAsP layers grown by CBE on (100) InP

    NARCIS (Netherlands)

    Marschner, T.H.; Leijs, M.R.; Vonk, H.; Wolter, J.H.

    1998-01-01

    We present X-ray diffraction (XRD) investigations of the influence of the substrate off-orientation on the relaxation of InAsP layers grown on InP by chemical beam epitaxy (CBE). Our measurements show that with beginning relaxation the As-concentration increases drastically and stays constant if the

  20. On-chip patch antenna on InP substrate for short-range wireless communication at 140 GHz

    DEFF Research Database (Denmark)

    Dong, Yunfeng; Johansen, Tom Keinicke; Zhurbenko, Vitaliy

    2017-01-01

    This paper presents the design of an on-chip patch antenna on indium phosphide (InP) substrate for short-range wireless communication at 140 GHz. The antenna shows a simulated gain of 5.3 dBi with 23% bandwidth at 140 GHz and it can be used for either direct chip-to-chip communication or chip...

  1. Ultrafast carrier dynamics in Br.sup.+./sup.-bombarded InP studied by time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Němec, Hynek; Fekete, Ladislav; Kadlec, Filip; Kužel, Petr

    2008-01-01

    Roč. 78, č. 23 (2008), 235206/1-235206/7 ISSN 1098-0121 R&D Projects: GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : InP * carrier lifetime * carrier mobility * ultrafast * ion-bombardment * terahertz Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  2. High detection performance of particle detectors based on SI InP doped with Ti and Zn

    Czech Academy of Sciences Publication Activity Database

    Gorodynskyy, Vladyslav; Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

    2008-01-01

    Roč. 55, č. 5 (2008), s. 2785-2788 ISSN 0018-9499 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512 Keywords : radiation detection * InP * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.518, year: 2008

  3. 3D thermal simulations and modeling of multi-finger InP DHBTs for millimeter-wave power amplifiers

    DEFF Research Database (Denmark)

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

    2017-01-01

    This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation...

  4. Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

    Science.gov (United States)

    Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

    2018-06-01

    Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H + irradiation with fluences ranging from 1 × 10 11 to 5 × 10 13 p cm -2 . It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

  5. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

    1988-09-01

    The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

  6. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Science.gov (United States)

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  7. Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

    International Nuclear Information System (INIS)

    Longo, R C; Carrete, J; Alemany, M M G; Gallego, L J

    2013-01-01

    Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers. (paper)

  8. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array

    NARCIS (Netherlands)

    Steenbergen, C.A.M.; Vreede, de L.C.N.; Dam, van C.; Scholtes, T.L.M.; Smit, M.K.; Tauritz, J.L.; Pedersen, J.W.; Moerman, I.; Verbeek, B.H.; Baets, R.G.F.

    1995-01-01

    An integrated 4-channel WDM-receiver frontend with 1 GHz channel bandwidth is described. The receiver consists of an integrated wavelength demultiplexer with photodiodes in InP technology connected through bond wires with a 4 channel Si bipolar transimpedance amplifier mounted on an epoxy board. The

  9. Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils

    2016-01-01

    In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the outpu...

  10. A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2008-01-01

    The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (...

  11. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...... applications of interest....

  12. Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

  13. Synthesis and Evaluation of Nanogold Bioconjugated with Trastuzumab as a Drug for Human Breast Cancer Cell Line

    International Nuclear Information System (INIS)

    AL-Hasnawi, I.M.

    2015-01-01

    carboxyl group by adding 1-ethyl-3-(3-dimethyl aminopropyl) Carbodiimide hydrochloride (EDC) and N-Hydroxysuccinimide (NHS) using cross-linking reaction. 2- Bioconjugation i.e.,binding the modified GNPs with the anti-Her2/neu antibody (Trastuzumab). All the above productswere characterized by using UV-Vis spectroscopy, FTIR, and zeta nanosizertechniques. Part III: Application of the abovenovel products (three types GNPs, biofunctionalized GNPs and bioconjugated GNPs, as well astrastuzumab alone) on human breast cancer cell line (SK-BR-3) and on an isolated fraction of whole blood, peripheral blood mononuclear cells (PBMCs) in vitro. The evaluation was done by cytotoxicity assay, viability assay using inverted and light microscopy, and ELISA-reader. Part IV: In clinical characterization of the disease two tumor marker [cancer antigen (CA15-3) and carcinoembryonic antigen (CEA)] were investigated as well as, sex steroid hormones (estradiol, progesterone, and testosterone ), lipid profile and total proteins in sera of (100) Iraqi women with breast cancer classified to two groups depending on their Her2/neuimmunohistochemistry status (group I (positive) and group II (negative)) patients were recruited Al-Amal Hospital in Baghdad city during the period from the beginning of June -2013 to end of Dec.-2013. Their ages ranged from (27-70) years with irregular of menstrual cycle because taking of hormonal therapy. The results were compared with (40) blood samples from apparently healthy women as control group. Results revealed a highly significant increase (p<0.001) in the levels of CA15-3 and decrease in CEA. The three sex steroid hormonesrevealed significant increase (p<0.001) in the patients group compared to the control group. Lipid profile and total proteins were significantly decreased (p<0.05) in negative Her2/neu group and increased in positive Her2/neu, except triglyceride. It was concluded that there was a positive associations between CA15-3 and CEA as well as between CA

  14. Quantum information

    International Nuclear Information System (INIS)

    Kilin, Sergei Ya

    1999-01-01

    A new research direction known as quantum information is a multidisciplinary subject which involves quantum mechanics, optics, information theory, programming, discrete mathematics, laser physics and spectroscopy, and depends heavily on contributions from such areas as quantum computing, quantum teleportation and quantum cryptography, decoherence studies, and single-molecule and impurity spectroscopy. Some new results achieved in this rapidly growing field are discussed. (reviews of topical problems)

  15. Quantum information

    Energy Technology Data Exchange (ETDEWEB)

    Kilin, Sergei Ya [B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)

    1999-05-31

    A new research direction known as quantum information is a multidisciplinary subject which involves quantum mechanics, optics, information theory, programming, discrete mathematics, laser physics and spectroscopy, and depends heavily on contributions from such areas as quantum computing, quantum teleportation and quantum cryptography, decoherence studies, and single-molecule and impurity spectroscopy. Some new results achieved in this rapidly growing field are discussed. (reviews of topical problems)

  16. Quantum ontologies

    International Nuclear Information System (INIS)

    Stapp, H.P.

    1988-12-01

    Quantum ontologies are conceptions of the constitution of the universe that are compatible with quantum theory. The ontological orientation is contrasted to the pragmatic orientation of science, and reasons are given for considering quantum ontologies both within science, and in broader contexts. The principal quantum ontologies are described and evaluated. Invited paper at conference: Bell's Theorem, Quantum Theory, and Conceptions of the Universe, George Mason University, October 20-21, 1988. 16 refs

  17. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  18. Quantum Computer Games: Quantum Minesweeper

    Science.gov (United States)

    Gordon, Michal; Gordon, Goren

    2010-01-01

    The computer game of quantum minesweeper is introduced as a quantum extension of the well-known classical minesweeper. Its main objective is to teach the unique concepts of quantum mechanics in a fun way. Quantum minesweeper demonstrates the effects of superposition, entanglement and their non-local characteristics. While in the classical…

  19. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  20. X-ray photoelectron spectroscopy/Ar+ ion profile study of thin oxide layers on InP

    International Nuclear Information System (INIS)

    Thurgate, S.M.; Erickson, N.E.

    1990-01-01

    The effect of incremental ion bombardment on the surface layers of an aqua regia etched InP sample was studied by monitoring the components of the In 3d 5/2 and O 1s x-ray photoelectron spectroscopy (XPS) lines as the sample was bombarded with low energy (1 keV) Ar + ions. The changes in the stoichiometry of the surface produced large shifts in the position of the In 3d and O 1s lines that were not paralleled by shifts in the P 2p line. Analysis of these shifts indicated that the surface was covered with a mixture of indium hydroxide and indium phosphate, with the phosphate closer to the InP substrate. It is proposed that this layer structure is due to differences in the dissolution rates of the oxidation products in the acid etch and the effect of the distilled water rinse. It may be possible to alter the composition of such oxides by carefully tailoring the etch conditions to optimize the kinetics for the particular oxide phase required. The analysis of the XPS lines also showed that the InP substrate was damaged at very low ion doses, and finally decomposed by the ion beam. When the ion ''cleaned'' sample was exposed to oxygen, a different oxide system was produced which consisted largely of In 2 O 3 and InPO 4 [or In(PO 3 ) x ]. This model of the oxidized surface of InP is consistent with other measurements and we conclude that ion milling together with XPS and careful curve fitting can be used to find the nature of the thin oxides on InP