WorldWideScience

Sample records for binary iii-v semiconductors

  1. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  2. Diluted magnetic III-V semiconductors

    Science.gov (United States)

    Munekata, H.; Ohno, H.; von Molnar, S.; Segmüller, Armin; Chang, L. L.; Esaki, L.

    1989-10-01

    A new diluted magnetic III-V semiconductor of In1-xMnxAs (xMnAs clusters. Films grown 200 °C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.

  3. Studies of III-V ferromagnetic semiconductors

    OpenAIRE

    Wang, Mu

    2012-01-01

    The III-V ferromagnetic semiconductor Gallium Manganese Arsenide ((Ga,Mn)As) is one of the most interesting and well studied materials in spintronics research area. The first chapter is a brief introduction to spintronics, the properties of (Ga,Mn)As and the growth technique molecular beam epitaxy (MBE). Then the thesis presents a detailed study of the effect on the Curie temperature (TC) of varying the growth conditions and post-growth annealing procedures for epitaxially grown (Ga,Mn)As ...

  4. Active III-V Semiconductor Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Ek, Sara; Chen, Yaohui; Schubert, Martin;

    2011-01-01

    We experimentally demonstrate enhanced amplified spontaneous emission in a quantum well III-V semiconductor photonic crystal waveguide slab. The effect is described by enhanced light matter interaction with the decrease of the group velocity. These are promising results for future compact devices...... for terabit/s communication, such as miniaturised semiconductor optical amplifiers and mode-locked lasers....

  5. Cleavage mechanoluminescence in elemental and III-V semiconductors

    CERN Document Server

    Chandra, B P; Gour, A S; Chandra, V K; Gupta, R K

    2003-01-01

    The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I sub m at the time t sub m corresponding to completion of the cleavage of the semiconductor, and then it d...

  6. Cleavage mechanoluminescence in elemental and III-V semiconductors

    International Nuclear Information System (INIS)

    The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value Im at the time tm corresponding to completion of the cleavage of the semiconductor, and then it decreases following power law decay. Expressions are derived for the ML intensity Im corresponding to the peak of the ML intensity versus time curve and for the total ML intensity IT. It is shown that both Im and IT should increase directly with the area of the newly created surfaces of the crystals. From the measurements of the ML intensity, the velocity of crack propagation in material can be determined by using the relation v=H/tm

  7. III-V aresenide-nitride semiconductor materials and devices

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  8. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  9. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

  10. Subsurface dimerization in III-V semiconductor (001) surfaces

    DEFF Research Database (Denmark)

    Kumpf, C.; Marks, L.D.; Ellis, D.;

    2001-01-01

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

  11. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  12. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  13. Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Tatsuo, E-mail: dr.tatsuosuzuki@gmail.com [Tokyo Metropolitan College of Industrial Technology, 8-17-1, Minami-Senju, Arakawa-ku, Tokyo 116-8523 (Japan)

    2015-11-23

    Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.

  14. Thermal conductivity of III-V semiconductor superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Mei, S., E-mail: song.mei@wisc.edu; Knezevic, I., E-mail: irena.knezevic@wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-11-07

    This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

  15. Antisites in III-V semiconductors: Density functional theory calculations

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alex.chroneos@open.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Tahini, H. A. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Schwingenschlögl, U., E-mail: udo.schwingenschlogl@kaust.edu.sa [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Grimes, R. W., E-mail: r.grimes@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{sub V}{sup q} defects dominate under III-rich conditions and V{sub III}{sup q} under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  16. Investigation of III-V semiconductor heterostructures for post-Si-CMOS applications

    Science.gov (United States)

    Bhatnagar, Kunal

    Silicon complementary metal-oxide-semiconductor (CMOS) technology in the past few decades has been driven by aggressive device scaling to increase performance, reduce cost and lower power consumption. However, as devices are scaled below the 100 nm region, performance gain has become increasingly difficult to obtain by traditional scaling. As we move towards advanced technology nodes, materials innovation and physical architecture are becoming the primary enabler for performance enhancement in CMOS technology rather than scaling. One class of materials that can potentially result in improved electrical performance are III-V semiconductors, which are ideal candidates for replacing the channel in Si CMOS owing to their high electron mobilities and capabilities for band-engineering. This work is aimed towards the growth and characterization of III-V semiconductor heterostructures and their application in post-Si-CMOS devices. The two main components of this study include the integration of III-V compound semiconductors on silicon for tunnel-junction Esaki diodes, and the investigation of carrier transport properties in low-power III-V n-channel FETs under uniaxial strain for advanced III-V CMOS solutions. The integration of III-V compound semiconductors with Si can combine the cost advantage and maturity of the Si technology with the superior performance of III-V materials. We have demonstrated high quality epitaxial growth of GaAs and GaSb on Si (001) wafers through the use of various buffer layers including AlSb and crystalline SrTiO3. These GaSb/Si virtual substrates were used for the fabrication and characterization of InAs/GaSb broken-gap Esaki-tunnel diodes as a possible solution for heterojunction Tunnel-FETs. In addition, the carrier transport properties of InAs channels were evaluated under uniaxial strain for the potential use of strain solutions in III-V CMOS.

  17. The Reliability of III-V semiconductor Heterojunction Bipolar Transistors

    OpenAIRE

    M. Borgarino; Plana, R.; Graffeuil, J; Cattani, L; F. Fantini

    2000-01-01

    The Heterojunction Bipolar Transistor (HBT) features some characteristics that make it a very promising device in the telecom field. For these applications, the reliability is a key issue. The aim of the present paper is to summarise the most relevant reliability concerns, from whose the HBT suffers, as the stability of the ohmic contact, the presence of defects, and the stability of the base dopant. Since in the last years the Si/SiGe HBT has emerged as a strong competitor against the III-V ...

  18. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  19. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.;

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on I...

  20. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  1. Methods for forming group III-V arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  2. Direct growth of single-crystalline III-V semiconductors on amorphous substrates.

    Science.gov (United States)

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager Iii, Joel W; Chrzan, Daryl C; Javey, Ali

    2016-01-01

    The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth. PMID:26813257

  3. Static and dynamical properties of II-VI and III-V group binary solids

    International Nuclear Information System (INIS)

    In this paper, we extend to II-VI and III-V group binary solids of zinc blende (ZB) structure with conduction d-electrons the calculation of static and dynamical properties such as bulk modulus (B) and cohesive energy or total energy (Ecoh) using the plasma oscillation theory of solids formalism already employed for ternary chalcopyrite semiconductors. The present method is not limited to tetrahedrally coordinated semiconductors and ternary chalcopyrites, but can be used for all semiconducting compounds. We have applied an extended formula on ZB structured binary semiconductors and found better agreement with the experimental data as compared to the values evaluated by previous researchers. The bulk modulus and cohesive energy of ZB-type structure compounds exhibit a linear relationship when plotted on a log-log scale against the plasmon energy ℎωp (in eV), but fall on a straight line. The results for bulk modulus differ from experimental values by the following amounts: ZnS 0.36%, ZnSe 10%, ZnTe 0.62%, CdS 1.8%, CdSe 7.4% and CdTe 1.6%, AlP 2.6%, AlAs 5.3%, AlSb 4.0%, GaP 0%, AlAs 0%, AlS 4.4%, InP 0%, InAs 0% and InSb 2.1%; and the results for cohesive energy differ from experimental values by the following amounts: ZnS 0.16%, ZnSe 0.73%, ZnTe 0.6%, CdS 7.6%, CdSe 3.5%, CdTe 2.5%, AlP 2.0%, AlAs 3.0%, AlSb 11.1%, GaP 14.6%, AlAs 17.0%, AlSb 8.7%, InP 4.3%, InAs 5.5% and InSb 0.6%.

  4. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Science.gov (United States)

    Li, Kan; Xing, Yingjie; Xu, H. Q.

    2016-06-01

    Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  5. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Directory of Open Access Journals (Sweden)

    Kan Li

    2016-06-01

    Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  6. Comprehension of Postmetallization Annealed MOCVD- on Treated III-V Semiconductors

    OpenAIRE

    Ming-Kwei Lee; Chih-Feng Yen

    2012-01-01

    The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs) by metal-organic chemical vapor deposition were studied. With (NH4)2S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides. The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2 films. For postmetal...

  7. X-point deformation potentials of III-V semiconductors in a tight-binding approach

    Science.gov (United States)

    Muñoz, M. C.; Armelles, G.

    1993-07-01

    The hydrostatic E1 and shear E2 deformation potentials of the III-V semiconductor compounds are calculated within a nearest-neighbor tight-binding approach. In the sp3s* parametrization, analytical expressions for both E1 and E2 are derived. The scaling law of the s*p interaction is modified in such a way that it provides deformation potentials at X in reasonable agreement with available experimental data. This phenomenological term takes into account the physical behavior of the actual excited states under strain and consequently, it allows us to describe accurately the dependence of the band-edge states under (001) biaxial strain.

  8. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    Science.gov (United States)

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  9. 'Up-hill' diffusion of zinc in the III-V semiconductors

    International Nuclear Information System (INIS)

    When radio-tracer zinc is diffused into a single crystal of one of the III-V semiconductors using the isoconcentration technique, a peculiar 'up-hill' region is sometimes observed in the diffusion profile. The zinc appears to be diffusing from a region of low concentration to one of high concentration, in contradiction to Fick's law. An analysis is given of the situation in which a radioactive impurity diffuses into a semiconductor already homogeneously doped with the same impurity. The results of the analysis are compared with experimental results and good agreement is found. The problem can be considered as a simple case of two elements diffusing simultaneously and interacting with each other. (author)

  10. Engineering the cell-semiconductor interface: a materials modification approach using II-VI and III-V semiconductor materials.

    Science.gov (United States)

    Bain, Lauren E; Ivanisevic, Albena

    2015-02-18

    Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material-biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell-material interactions. Initially, the review discusses experiments involving unmodified II-VI and III-V semiconductors - a starting point for assessing cytotoxicity and biocompatibility - followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell-semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.

  11. High resolution electron energy loss spectroscopy of narrow gap III-V semiconductor surfaces and interfaces

    CERN Document Server

    Veal, T D

    2002-01-01

    The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are investigated using high-resolution electron-energy-loss spectroscopy (HREELS). Changing the incident electron energy, alters the wave-vector transfer parallel to the surface, allowing the probing depth to be varied over typical space-charge layer widths (100 - 2000 A). Semi-classical dielectric theory simulations of the HREEL spectra are performed to extract quantitative information from the probing energy-dependence of the surface plasmon and phonon peaks. The plasma frequency used in the simulations is related to the electron concentration and effective mass using the Kane model of the non-parabolic conduction band. Space-charge layer parameters are obtained by comparing calculated smooth charge profiles with the histogram profiles that are used in the simulations. Complementary experimental techniques are employed to correlate the reconstruction, chemical composition and morphology of the surface with the electro...

  12. A model of axial heterostructure formation in III-V semiconductor nanowires

    Science.gov (United States)

    Dubrovskii, V. G.

    2016-03-01

    A kinetic model of the formation of axial heterostructures in nanocrystalline wires (nanowires, NWs) of III-V semiconductor compounds growing according to the vapor-liquid-solid (VLS) mechanism is proposed. A general system of nonstationary equations for effective fluxes of two elements of the same group (e.g., group III) is formulated that allows the composition profile of a heterostructure to be calculated as a function of the coordinate and epitaxial growth conditions, including the flux of a group V element. Characteristic times of the composition relaxation, which determine the sharpness of the heteroboundary (heterointerface), are determined in the linear approximation. A temporal interruption (arrest) of fluxes during the switching of elements for a period exceeding these relaxation times must increase sharpness of the heteroboundary. Model calculations of the composition profile in a double GaAs/InAs/GaAs axial heterostructure have been performed for various NW radii.

  13. Surfaces of III-V semiconductors studied by scanning tunneling microscopy and scanning luminescence

    Science.gov (United States)

    Chizhov, Ilya Yu

    The investigation of semiconductor surfaces on an atomic scale is of key importance for research areas such as the growth of thin films and low-dimensional objects by epitaxial techniques. Surfaces of III-V semiconductors, especially GaAs(001) surface, hold a central position in semiconductor surface science due to their extremely wide use in the growth of heterostructure-based electronic and optoelectronic devices. This work describes the results of experimental studies of (001) surfaces of two III-V semiconductors, GaAs and InAs, using scanning tunneling microscopy (STM) and scanning tunneling luminescence (STL). For STL studies an optical detection system consisting of an optical spectrometer (replacable by a photomultiplier tube), electronics, an IBM PC computer and acquisition software has been added to an existing STM (Omicron). The system is capable of recording luminescence images of surfaces and the acquisition of optical spectra of STM-induced luminescence. Application of STL to GaAs(001) surfaces has revealed that atomic-scale features, such as steps, domain boundaries etc., do not give any contrast in luminescence images, while larger objects, such as arsenic islands, do produce a pronounced contrast. The work in STL has helped to identify several key problems that have to be solved in order to make STL a valuable analytical technique. The STM studies of reconstructions on the GaAs(001) surface, which has a fairly complicated phase diagram, have concentrated on two major phase transitions, from As-rich c(4× 4) to As-rich (2× 4) phase and from As-rich (2× 4) to Ga-rich (4× 2) phase. The first transition has been found to proceed through an intermediate (4× 3)/c(4× 6) phase which has been previously identified as having (2× 3) symmetry. The second transition has been found to involve the formation of (3× 6) and (4× 6) multi-domain phases. The local structure and composition of these phases have been analyzed in detail and a comprehensive dynamic

  14. Heats of formation of binary semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, V.; Sastry, B.S.R. [Department of Electronics and Instrumentation Indian School of Mines, Dhanbad 826 004 (India)

    2005-03-01

    Heats of formation of tetrahedrally coordinated II-VI and III-V groups of binary semiconductors have been calculated using plasmon energy data. Two simple relations between plasmon energy and heats of formation have been proposed. One is based on spectroscopic model of Phillips and Van Vechten and other is based on the best-fit data of heats of formation. The calculated values of heats of formation from both the equations are compared with the experimental values and the values reported by earlier workers. A fairly good agreement has been obtained between them. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. III-V semiconductor nano-resonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

    CERN Document Server

    Liu, Sheng; Reno, John L; Sinclair, Michael B; Brener, Igal

    2016-01-01

    Metamaterials comprising assemblies of dielectric resonators have attracted much attention due to their low intrinsic loss and isotropic optical response. In particular, metasurfaces made from silicon dielectric resonators have shown desirable behaviors such as efficient nonlinear optical conversion, spectral filtering and advanced wave-front engineering. To further explore the potential of dielectric metamaterials, we present all-dielectric metamaterials fabricated from epitaxially grown III-V semiconductors that can exploit the high second-order optical susceptibilities of III-V semiconductors, as well as the ease of monolithically integrating active/gain media. Specifically, we create GaAs nano-resonators using a selective wet oxidation process that forms a low refractive index AlGaO (n~1.6) under layer similar to silicon dielectric resonators formed using silicon-on-insulator wafers. We further use the same fabrication processes to demonstrate multilayer III-V dielectric resonator arrays that provide us w...

  16. Superconductivity in Group III-V Semiconductor AlN Under High Pressure

    Directory of Open Access Journals (Sweden)

    G. Selva Dancy

    2015-09-01

    Full Text Available The electronic properties of cubic zinc blende type group III-V semiconductor AlN under pressure is studied using full potential linear muffin-tin orbital (FP-LMTO method. At normal pressure, AlN is an indirect bandgap semiconductor with band gap value 4.56 eV. When the pressure is increased, there is enhanced overlapping between the wave functions of the neighboring atoms. As a result the widths of the valence and empty conduction bands increase. These changes lead to the narrowing and indirect closing of the band gaps in AlN (metallization. On further increase of pressure, AlN becomes a superconductor and AlN comes under the class of electron-phonon-mediated high pressure superconductors. The superconducting transition temperatures (Tc of AlN are obtained as a function of pressure for the CsCl structure. It is also confirmed that the metallization, structural phase transition and onset of superconductivity do not occur simultaneously in this compound. DOI: http://dx.doi.org/10.17807/orbital.v7i3.628

  17. III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

    2011-07-01

    III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

  18. Structure and self-assembly of alkanethiols on III-V semiconductor (1 1 0) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zerulla, D. [UCD Dublin, School of Physics, Science Centre North, Dublin 4 (Ireland)], E-mail: dominic.zerulla@ucd.ie; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, 72076 Tuebingen (Germany)

    2009-05-15

    We report on the self-assembly, binding, and structural properties of alkanethiol monolayers on III-V semiconductor (1 1 0) surfaces. In particular, the focus will be on medium size n-alkanethiols adsorbed on InP(1 1 0) and GaP(1 1 0) using soft X-ray photoelectron spectroscopy (SXPS), X-ray absorption near-edge structure (XANES) spectroscopy, scanning tunneling microscopy (STM) and electrochemical methods to reveal the binding and the inner structure of the systems. The results show that the sulfur from the thiol groups binds directly, under cleavage of its hydrogen atoms, to the indium atoms of the substrate while the hydrogen is bound to the phosphorous of the substrate. The angular (azimuthal and polar) resolved measurements reveal a substrate-dependent tilt of 34 deg. from normal for InP and 15 deg. for GaP. A unique feature observed on these systems is the complete alignment of the alkyl chains with respect to the azimuthal orientation. Further structural data confirm that this adsorbate system represents the case of a huge, single domain organic monolayer. We interprete this behaviour, which deviates strongly from the well known thiol films on gold, silver or copper, in terms of structural constraints and dangling-bond induced preorientation of the alkanethiol chains.

  19. A model describing the pressure dependence of the band gap energy for the group III-V semiconductors

    Science.gov (United States)

    Zhao, Chuan-Zhen; Wei, Tong; Sun, Xiao-Dong; Wang, Sha-Sha; Lu, Ke-Qing

    2016-08-01

    A model describing the pressure dependence of the band gap energy for the group III-V semiconductors has been developed. It is found that the model describes the pressure dependence of the band gap energy very well. It is also found that, although the pressure dependence of the band gap energy for both the conventional III-V semiconductors and the dilute nitride alloys can be described well by the model in this work, the physical mechanisms for them are different. In addition, the influence of the nonlinear compression of the lattice on the band gap energy is smaller than that of the coupling interaction between the N level and the conduction band minimum of the host material.

  20. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  1. Atomic scale images of acceptors in III-V semiconductors; band bending, tunneling paths and wave functions

    OpenAIRE

    Loth, Sebastian

    2008-01-01

    This volume reports measurements of single dopant atoms in III-V semiconductors with low temperature scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). It studies the anisotropic spatial distribution of acceptor induced tunneling processes at the {110} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced spa...

  2. (GaMn)As: GaAs-based III?V diluted magnetic semiconductors grown by molecular beam epitaxy

    Science.gov (United States)

    Hayashi, T.; Tanaka, M.; Nishinaga, T.; Shimada, H.; Tsuchiya, H.; Otuka, Y.

    1997-05-01

    We have grown novel III-V diluted magnetic semiconductors, (Ga 1 - xMn x)As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (≲0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

  3. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    Science.gov (United States)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  4. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    Science.gov (United States)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  5. Small quantum dots of diluted magnetic III-V semiconductor compound

    OpenAIRE

    Pozhar, Liudmila A.

    2012-01-01

    In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown since experimental synthesis of nanoscale magnetic semiconductors, that is, nanoscale semiconductor compounds with enhanced magnetic properties. This enhancement is achieved by several methods, and in particular by doping common semiconductor compounds with...

  6. Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells

    Science.gov (United States)

    Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele

    2016-01-01

    We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.

  7. General synthesis of manganese-doped II-VI and III-V semiconductor nanowires.

    Science.gov (United States)

    Radovanovic, Pavle V; Barrelet, Carl J; Gradecak, Silvija; Qian, Fang; Lieber, Charles M

    2005-07-01

    A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1-->(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices. PMID:16178248

  8. On the ferromagnetic exchange in Mn-doped III-V semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K

    2003-05-01

    We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments.

  9. III-V microelectronics

    CERN Document Server

    Nougier, JP

    1991-01-01

    As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

  10. Discrimination of defects in III-V semiconductors by positron lifetime distribution

    CERN Document Server

    Chen, Z Q; Wang, S J

    2000-01-01

    In this paper, the numerical Laplace inversion technique and maximum entropy method are utilized to extract continuous positron lifetime distribution in semiconductors. The result is used to discriminate the native vacancy-type defects in as-grown GaAs and In P with different conduction type. Direct evidence of shallow positron traps were also observed in ion-implanted p-In P. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects.

  11. Ion beam etching system for mercury cadmium telluride and III-V compound semiconductors

    International Nuclear Information System (INIS)

    This paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows

  12. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    Science.gov (United States)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  13. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    Science.gov (United States)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  14. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation.

    Science.gov (United States)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  15. Virtual crystal description of III-V semiconductor alloys in the tight binding approach.

    Science.gov (United States)

    Nestoklon, M O; Benchamekh, R; Voisin, P

    2016-08-01

    We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the Hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme opens a way for atomistic modeling of alloy-based quantum wells and quantum wires without extensive supercell calculations. PMID:27270264

  16. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires

    International Nuclear Information System (INIS)

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e2/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of

  17. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    International Nuclear Information System (INIS)

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density

  18. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Krylov, Igor, E-mail: krylov@tx.technion.ac.il [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Ritter, Dan [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Department of Electrical Engineering, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Eizenberg, Moshe [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Department of Materials Science and Engineering, Technion – Israel Institute of Technology, Haifa 32000 (Israel)

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  19. Growth and Characterization of III-V Semiconductors for Device Applications

    Science.gov (United States)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  20. Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

    Energy Technology Data Exchange (ETDEWEB)

    Loth, S.

    2007-10-26

    This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

  1. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    Science.gov (United States)

    Walker, A. W.; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D.

    2016-04-01

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2-3 × 1017 cm-3) for an injected excess carrier concentration below 4 × 1012 cm-3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  2. Band structure and effective mass calculations for III-V compound semiconductors using hybrid functionals and optimized local potentials

    International Nuclear Information System (INIS)

    The band structures of III-V semiconductors (InP, InAs, InSb, GaAs, and GaSb) are calculated using the HSE06 hybrid functional, GW, and local potentials optimized for the description of band gaps. We show that the inclusion of a quarter of the exact HF exchange allows to predict accurate direct band gaps for InP, InAs, and InSb, i.e., 1.48, 0.42, 0.28 eV, in good agreement with recent experiments, i.e., 1.42, 0.42, 0.24 eV, respectively. The calculated effective masses and Luttinger parameters are also in reasonable agreement with experiment, although a tendency towards underestimation is observed with increasing anion mass. In order to find more efficient methods than hybrid functionals, the modified Becke-Johnson exchange potential is also employed to calculate the effective masses. The agreement of the effective masses with experiment is comparable to the one obtained with the HSE06 hybrid functional. Therefore, this opens a way to model band structures of much large systems than possible using hybrid functionals.

  3. Optical and electronic properties of some binary semiconductors from energy gaps

    CERN Document Server

    Tripathy, Sunil K

    2015-01-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap.

  4. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  5. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires; Phasenkohaerenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Estevez Hernandez, Sergio

    2009-10-16

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e{sup 2}/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties

  6. Monitoring of stress relaxation and defect formation in metamorphic III-V semiconductor heterostructures for high-efficiency solar cells; Kontrolle von Spannungsrelaxation und Defektbildung in metamorphen III-V Halbleiterheterostrukturen fuer hocheffiziente Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Schoene, Jan

    2009-07-21

    The paper discusses the further development of monolithic III-V multiple solar cells with three pn transitions for applications in concentrating PV systems. These triple solar cells consist of a GaInP upper cell, a GaInAs middle cell and a germanium lower cell, which are connected via electrically conducting and optically transparent tunnel diodes. Efficiencies are higher than 40 % with concentrated light. Demands on materials for III-V high-efficiency solar cells are extremely high. Especially in the metamorphic triple solar cell, for which compound semiconductors with different interatomic distances are deposited epitactically on each other, crystal defects may occur that impair the performance of the solar cell. The use of appropriate layer growing concepts may manipulate the formation of crystal defects and minimize their influence on solar cell performance. Both conventional and high-resolution transmission electron microscopy (TEM and HRTEM) as well as high-resolution X-ray diffraction (HRXRD) were applied successfully for investigating defect formation and layer stresses. In the investigations described, these methods were applied to develop a high-efficiency triple solar cell with a world first efficiency of 41.1 percent in concentrated light. [German] Diese Arbeit beschaeftigt sich mit der Weiterentwicklung von monolithischen III-V-Mehrfach-Solarzellen mit drei pn-Uebergaengen fuer die Anwendung in konzentrierenden Photovoltaiksystemen. Diese Tripelsolarzellen bestehen aus einer GaInP-Oberzelle, einer GaInAs-Mittelzelle und einer Germanium-Unterzelle, die mittels elektrisch leitender und optisch transparenter Tunneldioden verbunden sind. Derartige Solarzellen erzielen mittlerweile Rekordwirkungsgrade von mehr als 40 % unter konzentriertem Licht. Bei den III-V Hocheffizienzsolarzellen sind die Anforderungen an die Materialqualitaet ausserordentlich hoch. Insbesondere bei der metamorphen Tripelsolarzelle, bei der Verbindungshalbleiter mit unterschiedlichen

  7. Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

    Science.gov (United States)

    Haneji, Nobuo; Segami, Goh; Ide, Tomoyoshi; Suzuki, Tatsuya; Arakawa, Taro; Tada, Kunio; Shimogaki, Yukihiro; Nakano, Yoshiaki

    2003-06-01

    Electron cyclotron resonance-reactive ion etching (ECR-RIE) is very useful for fabricating semiconductor photonic devices and integrated circuits (PICs). The mixture gas of CH4/H2 is used for etching III-V semiconductors, but the carbon polymer film deposited on the surface during the etching process presents some problems. Thus, the polymer film must be ashed off using an O2 plasma. We introduced the cyclic injection of CH4/H2/Ar and O2 to ECR-RIE, and demonstrated that it was very useful for etching of InP. However, compound semiconductors containing Al (e.g., AlGaAs and InAlAs) react with oxygen and an alumina layer is formed, which cannot be etched by CH4/H2 etching. Therefore, we used a new cyclic etching process with constant Ar flow in the chamber to remove this alumina layer by Ar ion etching, and obtained good results for etching rate and surface morphology for the compound semiconductors containing Al. We also proposed a suitable combination of three cyclic etching procedures (continuous etching, cyclic etching without constant Ar flow and cyclic etching with constant Ar flow) for etching the multilayer heterostructure of III-V semiconductors including InP and/or compound semiconductors containing Al.

  8. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  9. Large Magnetic Moments of Arsenic-Doped Mn Clusters and their Relevance to Mn-Doped III-V Semiconductor Ferromagnetism

    CERN Document Server

    Kabir, M; Mookerjee, A; Kabir, Mukul; Mookerjee, Abhijit

    2005-01-01

    We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

  10. Systematic defect donor levels in III-V and II-VI semiconductors revealed by hybrid functional density-functional theory

    Science.gov (United States)

    Petretto, Guido; Bruneval, Fabien

    2015-12-01

    The identification of defect levels from photoluminescence spectroscopy is a useful but challenging task. Density-functional theory (DFT) is a highly valuable tool to this aim. However, the semilocal approximations of DFT that are affected by a band gap underestimation are not reliable to evaluate defect properties, such as charge transition levels. It is now established that hybrid functional approximations to DFT improve the defect description in semiconductors. Here we demonstrate that the use of hybrid functionals systematically stabilizes donor defect states in the lower part of the band gap for many defects, impurities or vacancies, in III-V and in II-VI semiconductors, even though these defects are usually considered as acceptors. These donor defect states are a very general feature and, to the best of our knowledge, have been overlooked in previous studies. The states we identify here may challenge the older assignments to photoluminescent peaks. Though appealing to screen quickly through the possible stable charge states of a defect, semilocal approximations should not be trusted for that purpose.

  11. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

    Directory of Open Access Journals (Sweden)

    Jacky Even

    2014-01-01

    Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

  12. High-speed guided-wave electro-optic modulators and polarization converters in III-V compound semiconductors

    Science.gov (United States)

    Rahmatian, Farnoosh

    In the last few decades, the need for electronic communication has increased by several orders of magnitude. Due to the rapid growth of the demand for transmission bandwidth, development of very high-speed communication systems is crucial. This thesis describes integrated-optic electro-optic modulators using travelling-wave electrodes in compound semiconductors for ultra-high-speed guided-wave optical communications. Both Mach-Zehnder (MZ) interferometric modulators and polarization converters (PC) have been studied with particular emphasis on the latter ones. Slow-wave travelling-wave electrodes in compound semiconductors have previously been proposed and demonstrated. Here, a study of slow-wave, travelling-wave electrodes on compound semiconductors has been performed in order to significantly improve their use in ultra-wide-band guided-wave electro-optic devices. The most important factors limiting the high frequency performance of such devices, in general, are the microwave-lightwave velocity mismatch and the microwave loss on the electrodes. Based on the deeper understanding acquired through our study, we have designed, fabricated, and tested low-loss, slow-wave, travelling-wave electrodes on semi- insulating GaAs (SI-GaAs) and AlGaAs/GaAs substrates. Microwave-to-lightwave velocity matching within 1% was achieved using slow-wave coplanar strip electrodes; many of the electrodes had effective microwave indices in the range 3.3 to 3.4 (measured at frequencies up to 40 GHz). For the electrodes fabricated on SI-GaAs substrates, microwave losses of 0.22 Np/cm and 0.34 Np/cm (average values at 40 GHz) were measured for the slow-wave coplanar strip and the slow-wave coplanar waveguide electrodes, respectively. For the electrodes fabricated on the AlGaAs/GaAs substrates containing the modulators, the corresponding losses were, on average, 0.17 Np/cm higher at 40 GHz. For the first time, ultra-wide-band polarization converters using slow-wave electrodes have been

  13. Epitaxial III-V semiconductors for integrated electro-optics. Final report, 1 August 1986-30 April 1988

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, W.A.; Beachley, O.T.; Kwok, H.S.; Liu, P.L.; Wie, C.R.

    1988-06-14

    Research was conducted on the synthesis and evaluation of new organometallics (OM), growth of epitaxial layers by OMCVD and laser chemical vapor deposition (LCVD), laser interaction with materials, structural and chemical evaluation of epitaxial layers, electrical evaluation of epitaxial layers and radiation effects in semiconductors and insulators. New OM precursors were developed and used in OMCVD. New OM sources are considered for lower toxicity and more efficient reaction. For the first time, InSb was grown in CdTe by OMCVD. A quadrupole mass analyzer and low temperature luminescence were installed for in situ diagnostics. Laser interaction studies reveal the importance of tunneling ionization for carrier generation in low bandgap materials. Ion emission was measured from a metal surface due to laser irradiation. Ions were observed at low laser fluence and at a frequency corresponding to an energy less than the material work function. Rocking-curve studies of MBE-grown strained GaInAs on GaAs is the most-reliable technique for strains < 0.3%. LO-TO splitting in ion-damaged GaAs has been explained by the effective ionic charge of the ion-beam-induced point defects. Deep-level transient spectroscopy studies of irradiated p-InP has revealed trap levels and annealing effects of importance in extraterrestrial applications. A Yb/p-InP device has shown good linearity and improved stability as a temperature sensor from 100-400K. Thin (150 A) oxides on Si for VLSI applications were found to be more radiation tolerant compared to thicker oxides.

  14. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  15. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  16. Refractive Indices of Semiconductors from Energy gaps

    CERN Document Server

    Tripathy, S K

    2015-01-01

    An empirical relation based on energy gap and refractive index data has been proposed in the present study to calculate the refractive index of semiconductors. The proposed model is then applied to binary as well as ternary semiconductors for a wide range of energy gap. Using the relation, dielectric constants of some III-V group semiconductors are calculated. The calculated values for different group of binary semiconductors, alkali halides and ternary semiconductors fairly agree with other calculations and known values over a wide range of energy gap. The temperature variation of refractive index for some binary semiconductors have been calculated.

  17. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    Energy Technology Data Exchange (ETDEWEB)

    Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang, E-mail: S.Zhou@hzdr.de [Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden (Germany); Gao, Kun; Helm, M. [Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany); Weschke, E. [Helmholtz-Zentrum Berlin für Materialien und Energie, Wilhelm-Conrad-Röntgen-Campus BESSY II, D-12489 Berlin (Germany); Gordan, O.; Salvan, G.; Zahn, D. R. T. [Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany)

    2015-01-28

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

  18. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    International Nuclear Information System (INIS)

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds

  19. Thermal expansion coefficient of binary semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, V.; Sastry, B.S.R. [Indian School of Mines, Dhanbad (India). Dept. of Electronics and Instrumentation

    2001-07-01

    The linear thermal expansion coefficient of tetrahedrally coordinated A{sup II}B{sup VI} and A{sup III}B{sup V} semiconductors has been calculated using plasmon energy data. A simple relation between the bond length and plasmon energy has been derived. The calculated values of thermal expansion coefficient and bond length have been compared with the experimental values and the values reported by different workers. An excellent experiment has been obtained between them. (orig.)

  20. Structural and Thermal Properties of Elementary and Binary Tetrahedral Semiconductor Nanoparticles

    Science.gov (United States)

    Omar, M. S.

    2016-01-01

    We report an equation free from fitting parameters as a direct calculation of size-dependent mean bond length for group IV and compounds from the III-V and II-VI binary groups. Size-dependent melting temperature and thermal expansion are also investigated for some materials forming the groups mentioned above. The empirical relation, which is obtained from fitting experimental data of melting enthalpy, is used to recalculate their values as well as entropy. The nanosize dependence of lattice thermal expansion for elements forming group IV is analyzed according to the hard sphere model, while mean ionicity is used for groups III-V and II-VI.

  1. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

    Science.gov (United States)

    Webster, P. T.; Shalindar, A. J.; Riordan, N. A.; Gogineni, C.; Liang, H.; Sharma, A. R.; Johnson, S. R.

    2016-06-01

    The optical properties of bulk InAs0.936Bi0.064 grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient are measured over photon energies ranging from 44 meV to 4.4 eV and are used to identify the room temperature bandgap energy of bulk InAs0.936Bi0.064 as 60.6 meV. The bandgap of InAsBi is expressed as a function of Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529 eV between the Bi impurity state and the InAs valence band. These results are programmed into a software tool that calculates the miniband structure of semiconductor superlattices and identifies optimal designs in terms of maximizing the electron-hole wavefunction overlap as a function of transition energy. These functionalities are demonstrated by mapping the design spaces of lattice-matched GaSb/InAs0.911Sb0.089 and GaSb/InAs0.932Bi0.068 and strain-balanced InAs/InAsSb, InAs/GaInSb, and InAs/InAsBi superlattices on GaSb. The absorption properties of each of these material systems are directly compared by relating the wavefunction overlap square to the absorption coefficient of each optimized design. Optimal design criteria are provided for key detector wavelengths for each superlattice system. The optimal design mid-wave infrared InAs/InAsSb superlattice is grown using molecular beam epitaxy, and its optical properties are evaluated using spectroscopic ellipsometry and photoluminescence spectroscopy.

  2. Studies on II-VI and III-V semiconductor nanostructures. Introduction of the core/shell/shell structure and development of CdSe nanocrystals in an automatized procedure; Untersuchungen an II-VI und III-V Halbleiternanostrukturen. Einfuehrung der Core/shell/shell-Struktur und Darstellung von CdSe-Nanokristallen in einem automatisierten Verfahren

    Energy Technology Data Exchange (ETDEWEB)

    Mekis, I.

    2005-11-15

    The work in this dissertation is focused on the development and characterization of fluorescent II-VI and III-V-Nanomaterials. Highly luminescent and photostable Nanocrystals with narrow size distributions were prepared. It was shown that nearly monodisperse CdSe-Nanocrystals could be prepared from Cd(Ac){sub 2} and TOPSe in a mixture of TOPO/TOP/HDA/TDPA. Nearly monodisperse CdSe/CdS-Core/shell-Nanocrystals have been prepared in a one-pot-synthesis by injection of H{sub 2}S-Gas into a freshly prepared crude solution of CdSe. The passivation of the CdSe-core with an inorganic shell of CdS resulted in the drastic improvement of the photoluminescence-efficiency of the colloidal solution. Reproducible room-temperature quantum yields reached up to a value of 85%. Photostability investigations have proved the enhanced stability of CdSe/CdS-Nanocrystals compared to CdSe-Nanocrystals under illumination with UV-Light. A novel type of luminescent semiconductor nanocrystal structure has been developed, consisting of a CdSe core and two anorganic shells. Highly fluorescent and nearly monodisperse CdSe/CdS/ZnS- and CdSe/ZnSe/ZnS-Core/shell/shell-nanocrystals have been prepared via organometallic- and acetate-precursors. The Core/she ll/shell particles reached reproducible room-temperature quantum yields up to 85%. Photostability investigations among CdSe-core, CdSe/CdS-Core/shell- and CdSe/CdS/ZnS- Core/shell/-shell-nanocrystals under illumination with UV-light have proved the highest photostability of the Core/shell/shell-particles. The photostabilities of CdSe/ZnSe/ZnS-and CdSe/ZnS-nanocrystals were compared under illumination with intense laser-beam in air. Another part of this work focused on the development of an automated synthesis procedure of CdSe-nanocrystals by constructing and implementing a flow-reactor system. The size and structure of prepared nanocrystals depended considerably on the Cd:Se-precursorratio and the flow-rate. The preparation of CdSe using Cd(Ac)2

  3. Novel integration technique for silicon/III-V hybrid laser.

    Science.gov (United States)

    Dong, Po; Hu, Ting-Chen; Liow, Tsung-Yang; Chen, Young-Kai; Xie, Chongjin; Luo, Xianshu; Lo, Guo-Qiang; Kopf, Rose; Tate, Alaric

    2014-11-01

    Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique. PMID:25401832

  4. Physics, fabrication and characterization of III-V multi-gate FETs for low power electronics

    Science.gov (United States)

    Thathachary, Arun V.

    With transistor technology close to its limits for power constrained scaling and the simultaneous emergence of mobile devices as the dominant driver for new scaling, a pathway to significant reduction in transistor operating voltage to 0.5V or lower is urgently sought. This however implies a fundamental paradigm shift away from mature Silicon technology. III-V compound semiconductors hold great promise in this regard due to their vastly superior electron transport properties making them prime candidates to replace Silicon in the n-channel transistor. Among the plethora of binary and ternary compounds available in the III-V space, InxGa1-xAs alloys have attracted significant interest due to their excellent electron mobility, ideally placed bandgap and mature growth technology. Simultaneously, electrostatic control mandates multigate transistor designs such as the FinFET at extremely scaled nodes. This dissertation describes the experimental realization of III-V FinFETs incorporating InXGa1-XAs heterostructure channels for high performance, low power logic applications. The chapters that follow present experimental demonstrations, simulations and analysis on the following aspects (a) motivation and key figures of merit driving material selection and design; (b) dielectric integration schemes for high-k metal-gate stack (HKMG) realization on InXGa 1-XAs, including surface clean and passivation techniques developed for high quality interfaces; (c) novel techniques for transport (mobility) characterization in nanoscale multi-gate FET architectures with experimental demonstration on In0.7Ga0.3As nanowires; (d) Indium composition and quantum confined channel design for InXGa 1-XAs FinFETs and (e) InAs heterostructure designs for high performance FinFETs. Each chapter also contains detailed benchmarking of results against state of the art demonstrations in Silicon and III-V material systems. The dissertation concludes by assessing the feasibility of InXGa 1-XAs Fin

  5. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    Science.gov (United States)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, Sanghyeon; Choi, Won Jun

    2016-02-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  6. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

    Science.gov (United States)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-02-11

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  7. Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

    OpenAIRE

    Beata Bajorowicz; Anna Cybula; Winiarski, Michał J.; Tomasz Klimczuk; Adriana Zaleska

    2014-01-01

    Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary a...

  8. Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

    Energy Technology Data Exchange (ETDEWEB)

    Wensorra, Jakob

    2009-03-20

    The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a good control of the device current by the gate voltage, without gate leakage. The peak current swing factor (the ratio between peak currents corresponding to the limits of a certain interval of the gate voltage) is about 3 for 150 nm diameter nano-RTTs but reach 6 for 60 nm diameter nano-RTTs (functionality based on the quantum collimation effect). Apart from GaAs/AlAs nanocolumns, InAs nanocolumns have been investigated as well. Nano-diodes were characterized by DC room temperature measurements and low temperature magneto-transport measurements. At room temperature, a linear behavior is observed in the I-V characteristics. Periodic oscillations of the resistance were measured by varying magnetic field at low temperatures. (orig.)

  9. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.;

    2010-01-01

    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections si...

  10. Fast optical in situ spectroscopy in III-V MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Kaspari, C.

    2007-09-29

    This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

  11. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins

    OpenAIRE

    Cheng, Jun

    2010-01-01

    The monolithic integration of III-V semiconductors and Ge on Si is a major issue of heteroepitaxy that gave rise to extensive researches for over twenty years. Firstly because it allows combining the optoelectronic functionalities with industry standard CMOS, which can replace the metal interconnects by optical interconnects in integrated circuits. Moreover, the integration of III-V semiconductors or Ge on Si would significantly reduce the manufacturing cost of solar cells for the niche space...

  12. Microstructural evaluation of heteroepitaxial III-V semiconductor thin films

    Science.gov (United States)

    Chen, Eric Brice

    Microstructural features of single and multilayered strained (In xGa1-xAs/GaAs, (Al)GaAs1-ySb y/GaAs) and unstrained (In0.49Ga0.51P/GaAs) heteroepitaxial structures were evaluated. During growth of a 1.5% mismatched InxGa 1-xAs layer on GaAs at 470°C, real-time multibeam optical stress sensor measurements revealed an unexpected shoulder in the strain-thickness profile. Real-time data was used to pause film growth at pre-determined stress-states surrounding the shoulder region (pre-, mid- and post-shoulder) to probe its origin. Dislocation structure of each stress-state was characterized by transmission electron microscopy. The shoulder coincided with reactions between 60° dislocations forming edge dislocations, suggesting an increased dislocation mobility which is required for multiplication. Dislocation half-loops were observed via cross-sectional microscopy, resulting in rapid relaxation of the film. In-graded (InxGa1-xAs) and Sb-graded (Al0.5Ga0.5As1-ySby, GaAs 1-ySby) compositionally step-graded multilayer buffers were analyzed to determine the optimal alloy for preventing the propagation of threading dislocations to the epitaxial surface. Multilayers were graded from a lattice parameter of 0.564 nm to 0.591 nm (4.6% mismatch) over a 1 mum film thickness. Threading dislocation density in the top-most layer of the Sb-graded structures (≤109 cm-2) was lower than the In-graded alloy (>1010 cm-2). In the InxGa1-xAs structure, threading dislocations were observed to congregate in discrete channels directly correlated to surface crosshatches. As/Sb compositional modulations in the Sb-graded structures reveal a more planar growth surface, preventing threading dislocation trapping. Characterization of dislocation structure indicated a directional asymmetry in the 60° and edge dislocation density for the GaAs1-ySb y multilayer. Replacing Ga with Al0.5Ga0.5 in the Sb-graded ternary improved planarity, resulting in a more uniform dislocation density. Residual strain (calculated from quantitative x-ray analysis and dislocation density) in each of the buffer layers was within the bounds predicted by existing relaxation models and dependent upon lattice mismatch strain. Lattice-matched In0.49Ga0.51P-GaAs junctions as active regions of a heterojuction bipolar transistor were evaluated by high-resolution transmission electron microscopy and related to device performance. Microscopy was established as a feasible technique for characterizing interfacial roughness which was related to interface crystal quality (quantified by reverse-biased leakage currents) but not low-voltage device performance.

  13. Dopant Profiling of III-V Nanostructures for Electronic Applications

    Science.gov (United States)

    Ford, Alexandra Caroline

    2011-12-01

    High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons) on SiO2/Si are investigated as the channel material for high performance field-effect transistors (FETs) and post-growth, patterned doping techniques are demonstrated. First, the synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on SiO 2/Si substrates is demonstrated. The back-gated InAs nanowire FETs have electron field-effect mobilities of ˜4,000 cm2/Vs and ION/IOFF ˜104. The uniformity of the InAs nanowires is demonstrated by large-scale assembly of parallel arrays of nanowires (˜400 nanowires) on SiO2/Si substrates by a contact printing process. This enables high performance, "printable" transistors with 5--10 mA ON currents. Second, an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on SiO2/Si substrates is demonstrated. As a parallel to silicon-on-insulator (SOI) technology, the abbreviation "XOI" is used to represent this compound semiconductor-on-insulator platform. A high quality InAs/dielectric interface is obtained by the use of a thermally grown interfacial InAsOx layer (˜1 nm thick). Top-gated FETs exhibit a peak transconductance of ˜1.6 mS/microm at V DS=0.5V with ION/I OFF >104 and subthreshold swings of 107--150 mV/decade for a channel length of ˜0.5 microm. Next, temperature-dependent I-V and C-V studies of single InAs nanowire FETs are

  14. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    Energy Technology Data Exchange (ETDEWEB)

    Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  15. High frequency III-V nanowire MOSFETs

    Science.gov (United States)

    Lind, Erik

    2016-09-01

    III-V nanowire transistors are promising candidates for very high frequency electronics applications. The improved electrostatics originating from the gate-all-around geometry allow for more aggressive scaling as compared with planar field-effect transistors, and this can lead to device operation at very high frequencies. The very high mobility possible with In-rich devices can allow very high device performance at low operating voltages. GaN nanowires can take advantage of the large band gap for high voltage operation. In this paper, we review the basic physics and device performance of nanowire field- effect transistors relevant for high frequency performance. First, the geometry of lateral and vertical nanowire field-effect transistors is introduced, with special emphasis on the parasitic capacitances important for nanowire geometries. The basic important high frequency transistor metrics are introduced. Secondly, the scaling properties of gate-all-around nanowire transistors are introduced, based on geometric length scales, demonstrating the scaling possibilities of nanowire transistors. Thirdly, to model nanowire transistor performance, a two-band non-parabolic ballistic transistor model is used to efficiently calculate the current and transconductance as a function of band gap and nanowire size. The intrinsic RF metrics are also estimated. Finally, experimental state-of-the-art nanowire field-effect transistors are reviewed and benchmarked, lateral and vertical transistor geometries are explored, and different fabrication routes are highlighted. Lateral devices have demonstrated operation up to 350 GHz, and vertical devices up to 155 GHz.

  16. Heterogeneous integration of a III-V VCSEL light source for optical fiber sensing.

    Science.gov (United States)

    Li, Hongqiang; Ma, Xiangdong; Yuan, Danyang; Zhang, Zanyun; Li, Enbang; Tang, Chunxiao

    2016-09-15

    We propose a fiber Bragg grating (FBG) sensor interrogation system utilizing a III-V vertical cavity surface emitting laser (VCSEL) as the on-chip light source. Binary blazed grating (BBG) for coupling between III-V VCSEL and silicon-on-insulator (SOI) waveguides is demonstrated for interrogation of the FBG sensor. The footprint size of the BBG is only 5.62  μm×5.3  μm, and each BBG coupler period has two subperiods. The diameter of the VCSEL's emitting window is 5 μm, which is slightly smaller than that of the BBG coupler, to be well-matched with the proposed structure. Results show that the coupling efficiency from vertical cavities of the III-V VCSEL to the in-plane waveguides reached as high as 32.6% when coupling the 1550.65 nm light. The heterogeneous integration of the III-V VCSEL and SOI waveguides by BBG plays a fundamental role in inducing a great breakthrough to the miniaturization of an on-chip light source for optical fiber sensing. PMID:27628346

  17. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    Science.gov (United States)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  18. Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

    Science.gov (United States)

    Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

    2014-01-01

    Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  19. Structural and thermochemical Aspects of (III-V)IV3 Material Assembly from First Principles

    Science.gov (United States)

    Chizmeshya, Andrew; Kouvetakis, John

    2014-03-01

    Alloys with (III-V)-(IV) compositions, including Si3(AlP), Si5-2y(AlP)y, Si3Al(As1-xNx), Si5-2yAl(P1-xNx)y and Ge5-2y(InP)y and have recently been synthesized as mono-crystalline films on Si substrates, using a synthesis route specifically designed to avoid phase separation between the III-V and IV constituents. Molecular ``building blocks'' containing group-V-centered III-V-IV3 cores, formed via interactions of group-III atoms and reactive silyly/germyl hydride precursors of desired composition (e.g, P(SiH3)3 , P(GeH3)3 , etc), assemble to form stable, covalent, diamond-like materials with the inherent tetrahedral symmetry and composition of the III-V-IV3 units. The resulting systems may provide access to a broad range of new semiconductor systems with extended optoelectronic properties, provided that the required molecular sources are available, the thermodynamic processes are viable, and the resulting alloy composition can be tuned to lattice-match the growth substrate. Molecular/solid-state simulations are used to identify promising synthetic pathways and guide the epitaxial creation of new (III-V)-(IV) materials. The thermodynamics of gas phase synthesis reactions, energetic stability of the alloys, and their epitaxial/chemical compatibility with the substrate are combined to form a global figure of merit. The latter corroborates the synthesis of known systems and predicts that formation of GaPSi3/Si(100), GaAsSi3/SiGe(100), AlPGe3/Ge(100) and InAsSi3/Ge(100) may also be favorable. Supported by NSF-DMR under SusChEM award #1309090.

  20. Handbook of spintronic semiconductors

    CERN Document Server

    Chen, Weimin

    2010-01-01

    Offers a review of the field of spintronic semiconductors. This book covers a range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, developments in theory and experimental techniques and potential device applications.

  1. Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching

    Directory of Open Access Journals (Sweden)

    A. Turala

    2013-01-01

    Full Text Available Microfabrication cycles of III-V multijunction solar cells include several technological steps and end with a wafer dicing step to separate individual cells. This step introduces damage at lateral facets of the junctions that act as charge trapping centers, potentially causing performance and reliability issues, which become even more important with today’s trend of cell size reduction. In this paper we propose a process of wet etching of microtrenches that allows electrical isolation of individual solar cells with no damage to the sidewalls. Etching with bromine-methanol, the solution that is typically used for nonselective etching of III-V compounds, results in the formation of unwanted holes on the semiconductor surfaces. We investigate the origin of holes formation and discuss methods to overcome this effect. We present an implementation of the isolation step into a solar cell fabrication process flow. This improved fabrication process opens the way for improved die strength, yield, and reliability.

  2. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin

    2011-02-19

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  3. Free-carrier effects on electronic and optical properties of binary oxide semiconductors

    Science.gov (United States)

    Schleife, Andre; Roedl, Claudia

    2014-03-01

    While there is persistent interest in oxides, e.g., for semiconductor technology or optoelectronics, it remains difficult to achieve n-type and p-type doping of one and the same material. At the same time, higher and higher conductivities are reported for both types of doping individually. Hence, it is important to understand the corresponding influence of free carriers on electronic structure and optical properties. Modern electronic-structure calculations, based on hybrid exchange-correlation functionals and the GW approximation, were performed for n-type (ZnO, CdO, SnO2) and p-type (MnO, NiO) binary oxides. We use these results to analyze the influence of free carriers by computing contributions that increase (Burstein-Moss shift) or reduce (electron-electron interaction and ionized-impurity scattering) the band gaps as a function of free-carrier concentration. We also compute the carrier-concentration dependence of effective electron and hole masses and compare to experimental data. For n-type ZnO we compute optical absorption spectra by means of a recent extension of the Bethe-Salpeter framework. This allows us to take excitonic effects as well as the influence of free carriers on the electron-hole interaction into account. Prepared by LLNL under Contract DE-AC52-07NA27344.

  4. Progress Towards III-V Photovoltaics on Flexible Substrates

    Science.gov (United States)

    McNatt, Jeremiah S.; Pal, AnnaMaria T.; Clark, Eric B.; Sayir, Ali; Raffaelle, Ryne P.; Bailey, Christopher G.; Hubbard, Seth M.; Maurer, William F.; Fritzemeier, Les

    2008-01-01

    Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

  5. III-V nitrides and performance of graphene on copper plasmonic biosensor

    Science.gov (United States)

    Mohanty, Goutam; Sahoo, Bijaya Kumar

    2016-05-01

    In the present study, the influence of iii-v nitrides as well as Ge and Si on the sensitivity and performance of a graphene protected copper plasmonic biosensor has been investigated. These semiconductors have been used between copper (Cu) and graphene layers on a SF 10 glass prism. The sensitivity and performance of the biosensor has been computed for with and without semiconductors. III-V nitrides demonstrated high sensitivity and high figure of merit (FOM) in comparison to Si and Ge due to their superior electronic and optical properties. The enhancement of evanescent electric field due to Si, Ge, AlN, GaN and InN have been computed and found highest enhancement for InN. This happens due to high refractive index of InN than other semiconductors. Analysis shows that for a high sensitive imaging biosensor the required optimal thickness of copper, InN and graphene are respectively 32 nm, 13 nm and 0.34 nm for light of wavelength λ = 633 nm (red Hesbnd Ne laser). This study suggests that InN would be a better choice for fabrication of new imaging plasmonic biosensors for chemical and biological sensing.

  6. Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

    Science.gov (United States)

    Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

    2014-01-01

    Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst. PMID:25255249

  7. Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

    Directory of Open Access Journals (Sweden)

    Beata Bajorowicz

    2014-09-01

    Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  8. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-01-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

  9. Ab initio study on microscopic properties of III-V/water interfaces for photoelectrochemical hydrogen production

    Science.gov (United States)

    Wood, Brandon; Choi, Woon Ih; Schwegler, Eric; Ogitsu, Tadashi

    2013-03-01

    Photoelectrodes made of III-V semiconductors are known to exhibit very high solar-to-hydrogen conversion efficiency (from solar energy to chemical energy as H2 bond); however, photocorrosion of the electrode in electrolyte solution remains an issue. Based on ab-initio molecular dynamics simulations, we study the structure, stability, and chemical activity of GaP/InP(001) semiconductor electrodes in contact with water. We will show how surface oxygen and hydroxyl change the electronic and chemical properties of water at the interface, leading to the formation of a strong hydrogen-bond network where fast surface hydrogen transport seems to be realized. Implications from our findings will be discussed in detail at the presentation. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52- 07NA27344.

  10. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol;

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  11. Method of passivating semiconductor surfaces

    Science.gov (United States)

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  12. Improved adhesion of photoresist to III-V substrates using PECVD carbon films

    Science.gov (United States)

    Mancini, David P.; Smith, Steven M.; Hooper, Andrew F.; Talin, A.; Chang, Daniel; Resnick, Douglas J.; Voight, Steven A.

    2002-07-01

    Amorphous PECVD carbon films have been investigated as a means to prepare III-V compound semiconductor substrates for improved photoresist adhesion. Results show that significant improvements in adhesive durability of patterned photoresist occurred for carbon primed GaAs and InGaAs wafers used in conjunction with both i-line and DUV lithography processes. These carbon layers, were 50-100 Angstrom in thickness, and varied in composition and morphology from a nitrogen-doped, diamond-like material (DLC), to a more hydrogen rich, polymer-like material (PLC). Adhesion durability tests performed in baths of ammonium hydroxide (NH4OH) and hydrochloric acid (HCl) in general showed superior performance compared to non-primed substrates. The sole exception was a failure of PLC priming on GaAs wafers used with a DUV anti-reflective coating. This same system, however, was shown to work extremely well when a DLC coating was substituted. Characterization of PLC and DLC films included use of AES, XPS, FTIR, AFM, and contact angle analysis. Results indicate that carbon films passivate III-V oxides, creating a stable, hydrophobic surface. This factor is proposed as a key reason for the improved resistance to aggressive aqueous environments. AFM results show that carbon films are extremely smooth and actually decrease surface roughness, indicating that mechanical adhesion is unlikely.

  13. New III-V cell design approaches for very high efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

  14. Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array.

    Science.gov (United States)

    Lin, Shiyun; Zheng, Xuezhe; Yao, Jin; Djordjevic, Stevan S; Cunningham, John E; Lee, Jin-Hyoung; Shubin, Ivan; Luo, Ying; Bovington, Jock; Lee, Daniel Y; Thacker, Hiren D; Raj, Kannan; Krishnamoorthy, Ashok V

    2016-09-19

    We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

  15. Prospects of III-V Tunnel FETs for Logic Applications

    Science.gov (United States)

    Datta, Suman

    2015-03-01

    In order to continue and maintain the pace of energy efficient transistor scaling, it is imperative to scale the supply voltage of operation concurrently. In this invited paper, we discuss a promising III-V device architecture such as III-V Heterojunction Tunnel FETs that may break the seemingly inflexible energy vs. performance limit of silicon CMOS transistors and provide high performance, low leakage and low operating voltage for future logic transistor technology. Unlike conventional MOSFETs, the Tunnel FET (TFET) architecture employs a gate modulated Zener tunnel junction at the source which controls the transistor ON and OFF states. This scheme fundamentally eliminates the high-energy tail present in the Fermi-Dirac distribution of the valence band electrons in the p + source region and allows sub-kT/q steep slope device operation near the OFF state. This allows Tunnel FETs to achieve a much higher ION -IOFF ratio over a small gate voltage swing. A major challenge in the demonstration of high performance Tunnel FET is the limited rate of tunneling across the Zener junction which results in low drive current. Our results show, for the first time, that the on-current bottleneck in Tunnel FETs can be overcome by careful bandgap engineering. This work is supported by Intel, NRI/SRC and NSF through ASSIST NERC.

  16. III-V GaAs based plasmonic lasers (Presentation Recording)

    Science.gov (United States)

    Lafone, Lucas; Nguyen, Ngoc; Clarke, Ed; Fry, Paul; Oulton, Rupert F.

    2015-09-01

    Plasmonics is a potential route to new and improved optical devices. Many predict that sub wavelength optical systems will be essential in the development of future integrated circuits, offering the only viable way of simultaneously increasing speed and reducing power consumption. Realising this potential will be contingent on the ability to exploit plasmonic effects within the framework of the established semiconductor industry and to this end we present III-V (GaAs) based surface plasmon laser platform capable of effective laser light generation in highly focussed regions of space. Our design utilises a suspended slab of GaAs with a metallic slot printed on top. Here, hybridisation between the plasmonic mode of the slot and the photonic mode of the slab leads to the formation of a mode with confinement and loss that can be adjusted through variation of the slot width alone. As in previous designs the use of a hybrid mode provides strong confinement with relatively low losses, however the ability to print the metal slot removes the randomness associated with device fabrication and the requirement for etching that can deteriorate the semiconductor's properties. The deterministic fabrication process and the use of bulk GaAs for gain make the device prime for practical implementation.

  17. Epitaxial growth of III-V nitrides and phase separation and ordering in indium gallium nitride alloys

    Science.gov (United States)

    Doppalapudi, Dharanipal

    The family of III-V nitrides are wide band-gap semiconductors with a broad range of opto-electronic applications in LEDs, laser diodes, UV detectors as well as high temperature/high frequency devices. Due to the lack of good quality native substrates, GaN is grown on foreign substrates that have a lattice and thermal mismatch with GaN. This results in a material with a high density of defects, which in turn adversely affects the opto-electronic properties of the epilayer. In this study, GaN films were epitaxially grown on various substrates (C-plane sapphire, A-plane sapphire, SiC and ZnO) by molecular beam epitaxy. Additionally, GaN homoepitaxy onto laterally overgrown thick GaN substrates was investigated. It was demonstrated that the polarity of the GaN film plays a major role in determining the properties of the films. The growth parameters were optimized to eliminate inversion domain boundaries, which result in domains of opposite polarity in the GaN lattice. For growth on A-plane sapphire, it was found that substrate nitridation and low temperature buffer deposition are critical in order to obtain good epitaxial growth, in spite of the relatively small mismatch between the film and substrate. A crystallographic model was developed to explain this observation. By optimizing growth parameters, GaN films with excellent structural, transport, optical and device properties were grown. The second part of this research involves growth of ternary alloys and superlattice structures, which are essential in the fabrication of many devices. It was found that the InN-GaN pseudo-binary system is not homogeneous over the entire composition range. Due to the mismatch between the tetrahedral radii of GaN and InN, InGaN alloys exhibited phase separation and long-range atomic ordering. Investigations of InxGa1-xN films grown over a wide range of compositions by XRD and TEM showed that the predominant strain relieving mechanism was phase separation in films with x > 0.2, and

  18. Graded core/shell semiconductor nanorods and nanorod barcodes

    Science.gov (United States)

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  19. Anodic formation of binary and ternary compound semiconductor films for photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Schimmel, M.I.; Bottechia, O.L.; Wendt, H. [Technical University of Darmstadt (Germany). Institute of Chemical Technology

    1998-03-01

    By anodic oxidation of copper sheets in sulfide anion-containing electrolytes copper chalcogenide semiconductor films suitable for photovoltaic applications can be attained. Anodically chalcopyrite (Cu{sub 2}S) has been formed as pure, mechanically stable, homogeneous and adhesive polycrystalline films, consisting of well-developed large crystallites. Cu{sub 2}S coated copper sheets were produced with an area of 3 cm x 3 cm. P-n-junctions formed by evaporation of CdS onto the anodically formed Cu{sub 2}S films show an energy efficiency of 3.3%. The extension of this process to ternary systems, like copper/indium/sulfur, is likely to be possible. A mixture of Cu{sub 2}S and CuInS{sub 2} could be formed by codepositing In{sub 2}S{sub 3} together with Cu{sub 2}S. Cu{sub 2}Se-films with a thickness of up to 1 {mu}m were formed by chemical bath deposition. (author)

  20. Methods for fabricating thin film III-V compound solar cell

    Science.gov (United States)

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  1. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  2. Garnet-free optical circulators monolithically integrated on spatially modified III-V quantum wells

    CERN Document Server

    Aleahmad, Parinaz; Christodoulides, Demetrios; LiKamWa, Patrick

    2016-01-01

    Optical circulators are indispensable components in photonic networks that are aimed to route information in a unidirectional way among their N-ports1,2. In general, these devices rely on magneto-optical garnets3 with appreciable Verdet constants that are utilized in conjunction with other elements like permanent magnets, wave-plates, birefringent crystals and/or beam splitters. Consequently, these arrangements are typically bulky and hence not conducive to on-chip photonic integration4-6. Of interest would be to devise strategies through which miniaturized optical circulators can be monolithically fabricated on light-emitting semiconductor platforms by solely relying on physical properties that are indigenous to the material itself. By exploiting the interplay between non-Hermiticity and nonlinearity, here we demonstrate a new class of chip-scale circulators on spatially modified III-V quantum well systems. These garnet-free unidirectional structures are broadband (over 2.5 THz) at 1550 nm, effectively loss-...

  3. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1−xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique

  4. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V., E-mail: pbraun@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Sardela, Mauro [Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, Royal Institute of Technology (KTH), Electrum 229, 164 40 Kista (Sweden)

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  5. Micro-Hall magnetic sensors with high magnetic sensitivity based on III-V heterostructures

    Science.gov (United States)

    Del Medico, S.; Benyattou, Taha; Guillot, Gerard; Venet, T.; Gendry, Michel; Tardy, Jacques; Chovet, Alain

    1996-04-01

    In this work, we propose solutions based on engineering of III-V heterostructures to develop new types of semiconductor magnetic sensors. These micro-Hall sensors use the properties of a 2D electron gas and the benefit of pseudomorphic material, in which both the alloy composition and the built-in strain offer additional degrees of freedom for band structure tailoring, to exhibit high magnetic sensitivity, good linearity, low temperature coefficient and high resolution. With the growth optimization which is described, two pseudomorphic In0.75Ga0.25As/In0.52Al0.48As heterostructures were grown on a semi- insulating InP substrate by molecular beam epitaxy. To understand better the influence of the heterostructure design on its electronic properties, a model involving the self-consistent solution of the Poisson and Schrodinger equations using the Fermi-Dirac statistics has been developed. These results have been used to optimize the structure design. A magnetic sensitivity of 346 V/AT with a temperature coefficient of -230 ppm/ degree(s)C between -80 degree(s)C and 85 degree(s)C has been obtained. The device show good linearity against magnetic field and also against the supply current. High signal-to-noise ratios corresponding to minimal magnetic field of 350 nT/Hz1/2 at 100 Hz and 120 nT/Hz1/2 at 1 kHz have been measured.

  6. Time dependent simulations of the growth of III-V crystals by the liquid phase electroepitaxy

    Science.gov (United States)

    Zytkiewicz, Zbigniew R.; Strak, Pawel; Krukowski, Stanislaw

    2011-03-01

    Results of time dependent simulations of growth of bulk binary III-V crystals by current controlled liquid phase electroepitaxy (LPEE) are reported using GaAs as an example. Without any electrical current the LPEE system is isothermal, kept at 1073 K, thus no growth occurs. The electric current density of 10 A/cm2 leads to ohmic heating of the entire system, Peltier cooling of the Ga-GaAs(seed) interface and electromigration of As species in liquid Ga. Neither Peltier nor Joule effects are considered at the source/solution interface since in the configuration chosen the electric current bypasses the source crystal. The Peltier induced cooling and electromigration of As induce growth of GaAs, originally at the rate of 0.5 μm/min. As the growth proceeds the Peltier cooling starts to be compensated by Joule heating inside the crystal grown. Thus, the growth slows down and finally the average growth rate decreases to zero. It is shown that the LPEE growth is strongly time dependent, leading to the change in crystallization front, reflecting the slowest growth rate at the center of the crucible and the fastest close to the crucible wall. The temperature, As concentration convection and electric current distribution are presented showing their influence on the surface morphology of growing GaAs crystal.

  7. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

    Science.gov (United States)

    Talbo, V.; Mateos, J.; González, T.; Lechaux, Y.; Wichmann, N.; Bollaert, S.; Vasallo, B. G.

    2015-10-01

    Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I- MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design.

  8. Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hermle, Martin

    2008-11-27

    This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

  9. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials.

    Science.gov (United States)

    Reiss, Peter; Carrière, Marie; Lincheneau, Christophe; Vaure, Louis; Tamang, Sudarsan

    2016-09-28

    We review the synthesis of semiconductor nanocrystals/colloidal quantum dots in organic solvents with special emphasis on earth-abundant and toxic heavy metal free compounds. Following the Introduction, section 2 defines the terms related to the toxicity of nanocrystals and gives a comprehensive overview on toxicity studies concerning all types of quantum dots. Section 3 aims at providing the reader with the basic concepts of nanocrystal synthesis. It starts with the concepts currently used to describe the nucleation and growth of monodisperse particles and next takes a closer look at the chemistry of the inorganic core and its interactions with surface ligands. Section 4 reviews in more detail the synthesis of different families of semiconductor nanocrystals, namely elemental group IV compounds (carbon nanodots, Si, Ge), III-V compounds (e.g., InP, InAs), and binary and multinary metal chalcogenides. Finally, the authors' view on the perspectives in this field is given.

  10. Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes

    Science.gov (United States)

    Zhu, Di; Schubert, Martin F.; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Shim, Hyunwook; Sone, Cheolsoo

    2012-01-01

    Light-emitting diodes are becoming the next-generation light source because of their prominent benefits in energy efficiency, versatility, and benign environmental impact. However, because of the unique polarization effects in III-V nitrides and the high complexity of light-emitting diodes, further breakthroughs towards truly optimized devices are required. Here we introduce the concept of artificial evolution into the device optimization process. Reproduction and selection are accomplished by means of an advanced genetic algorithm and device simulator, respectively. We demonstrate that this approach can lead to new device structures that go beyond conventional approaches. The innovative designs originating from the genetic algorithm and the demonstration of the predicted results by implementing structures suggested by the algorithm establish a new avenue for complex semiconductor device design and optimization.

  11. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    Science.gov (United States)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  12. Resonantly Enhanced Second-Harmonic Generation Using III-V Semiconductor All-Dielectric Metasurfaces.

    Science.gov (United States)

    Liu, Sheng; Sinclair, Michael B; Saravi, Sina; Keeler, Gordon A; Yang, Yuanmu; Reno, John; Peake, Gregory M; Setzpfandt, Frank; Staude, Isabelle; Pertsch, Thomas; Brener, Igal

    2016-09-14

    Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using gallium arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 10(4) relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ∼2 × 10(-5) with ∼3.4 GW/cm(2) pump intensity. The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process. PMID:27501472

  13. Stable vapor transportation of solid sources in MOVPE of III V compound semiconductors

    Science.gov (United States)

    Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Marsman, Charles J.; Polcari, Robert F.; Ware, Robert A.; Woelk, Egbert

    2007-01-01

    Trimethylindium (TMI), in spite of being a solid, has remained the precursor of choice for the deposition of indium containing layers by MOVPE. However, maintaining stable TMI flows and constant concentrations in gas phase during the growth still continue to be a major concern in MOVPE. This issue is further compounded by lower TMI consumptions achieved as the MOVPE growth conditions become increasingly more aggressive to meet the industry demand of higher throughputs, e.g. at higher flow rates, or at reduced pressures or when TMI source is maintained at higher temperatures. In this paper, we report our new findings of improved TMI delivery (>90, and in some cases >95%) with excellent stability of TMI concentration throughout the cylinder lifetime. These results are achieved using standard fill capacity and under intentionally set aggressive conditions of pressure, temperature and flow. We report a novel delivery technology (Uni-Flo™ II cylinder) that is customer proven and comprises innovative improvements to our dip-tube-less cylinder design, Uni-Flo™ cylinder, and advancements in TMI packaging. In this report, TMI depletion rates are examined over an extensive range of operating parameters currently employed in MOVPE, viz. flow rates ranging from 100 to 1000 sccm, source temperatures between 17 and 30 °C, and reactor pressures in the range 300-1000 mbar. We report, significant improvements in TMI delivery (>95% depletion) at higher molar flux of TMI (>3 g/h) and an excellent reproducible dosimetry of TMI with no batch-to-batch variation, by using Uni-Flo™ II cylinder as the enabling solution to TMI delivery problems.

  14. Nanometer-Scale Compositional Structure in III-V Semiconductor Heterostructures Characterized by Scanning Tunneling Microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Allerman, A.A.; Bi, W.G.; Biefeld, R.M.; Tu, C.W.; Yu, E.T.; Zuo, S.L.

    1998-11-10

    Nanometer-scale compositional structure in InAsxP1.InNYAsxPl.x-Y/InP, grown by gas-source molecular-beam epitaxy and in InAsl-xPJkAsl$b#InAs heterostructures heterostructures grown by metal-organic chemical vapor deposition has been characterized using cross-sectional scanning tunneling microscopy. InAsxP1-x alloy layers are found to contain As-rich and P-rich clusters with boundaries formed preferentially within (T 11) and (111) crystal planes. Similar compositional structure is observed within InNYAsxP1-x-Y alloy layers. Imaging of InAsl-xp@Asl#bY superlattices reveals nanometer-scale clustering within both the hAsI-.p and InAsl$bY alloy layers, with preferential alignment of compositional features in the direction. Instances are observed of compositional structure correlated across a heterojunction interface, with regions whose composition corresponds to a smaller unstrained lattice, constant relative to the surrounding alloy material appearing to propagate across the interface.

  15. Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

    Science.gov (United States)

    Westland, Duncan James

    Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

  16. Resonantly enhanced second-harmonic generation using III-V semiconductor all-dielectric metasurfaces

    CERN Document Server

    Liu, Sheng; Keeler, Gordon A; Sinclair, Michael B; Yang, Yuanmu; Reno, John; Pertsch, Thomas; Brener, Igal

    2016-01-01

    Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently, allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scales render phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using Gallium Arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance we measure an absolute nonlinear conversion efficiency o...

  17. Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Martin

    2010-08-25

    In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal symmetry from cubic zinc-blende to hexagonal wurtzite structure, while the chemical composition of the material remains constant. The GaAs nanowires synthesized with the Au-free technique can be grown under conditions where a statistical wurtzite/zinc-blende polytypism occurs. A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is developed in order to characterize the resulting statistically distributed quantum heterostructures. Nanowires consisting of {approx}100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are studied by photoluminescence spectroscopy and Transmission Electron Microscopy. The photoluminescence of wurtzite GaAs is found to be consistent with a bulk wurtzite band gap of 1.50 eV, slightly smaller compared to the zinc-blende GaAs band gap. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the according bulk band gaps, while regions composed of a non periodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to estimate the band offsets of {delta}E{sub CB}=53{+-}20 meV and {delta}E{sub VB}=76{+-}12 meV between the two crystalline phases. These results are in excellent agreement with recent theoretical band structure calculations. (orig.)

  18. Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, O. [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Grosse, F.; Braun, W. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2010-02-15

    Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001) {beta} (4 x 3), {beta} (4 x 3)A{sub 1}, (4 x 6), and GaAs(001) {beta} 2(2 x 4), c (4 x 4) reconstructions. The computed energy differences do not exceed 1 meV / (1 x 1) which is in agreement with observed one-dimensional disorder on GaSb(001) and GaAs(001) surfaces at elevated temperatures for {beta} and {beta} 2 stoichiometries, respectively. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Thermodynamics of solid and liquid group III-V alloys

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.J.

    1978-10-01

    Solid-state electrochemical techniques are applied to the Ga-In-Sb-O system to measure some thermodynamic properties important for the analysis of solid-liquid phase equilibria in these important semiconductor materials. The standard Gibbs energies of formation of the most stable oxides of gallium and of indium are determined with a high-temperature solid-state electrochemical cell utilizing calcia-stabilized zirconia as the solid electrolyte and a (CO + CO/sub 2/) gaseous mixture as the reference electrode.

  20. Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wurstbauer, Ursula

    2008-04-15

    Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

  1. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

  2. Epitaxial growth of III-V compounds for electroluminescent light sources

    Science.gov (United States)

    Chu, T. L.; Smeltzer, R. K.

    1973-01-01

    The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.

  3. Engineering magnetism in semiconductors

    Directory of Open Access Journals (Sweden)

    Tomasz Dietl

    2006-11-01

    Full Text Available Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin interactions are mediated by holes in the valence band, changing the Fermi level using co-doping, electric fields, or light can directly manipulate the magnetic ordering. Moreover, engineering the Fermi level position by co-doping makes it possible to modify solubility and self-compensation limits, affecting magnetic characteristics in a number of surprising ways. The Fermi energy can even control the aggregation of magnetic ions, providing a new route to self-organization of magnetic nanostructures in a semiconductor host.

  4. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

    Science.gov (United States)

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  5. The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III-V Quantum Dots.

    Science.gov (United States)

    Franke, Daniel; Harris, Daniel K; Xie, Lisi; Jensen, Klavs F; Bawendi, Moungi G

    2015-11-23

    Control of quantum dot (QD) precursor chemistry has been expected to help improve the size control and uniformity of III-V QDs such as indium phosphide and indium arsenide. Indeed, experimental results for other QD systems are consistent with the theoretical prediction that the rate of precursor conversion is an important factor controlling QD size and size distribution. We synthesized and characterized the reactivity of a variety of group-V precursors in order to determine if precursor chemistry could be used to improve the quality of III-V QDs. Despite slowing down precursor conversion rate by multiple orders of magnitude, the less reactive precursors do not yield the expected increase in size and improvement in size distribution. This result disproves the widely accepted explanation for the shortcoming of current III-V QD syntheses and points to the need for a new generalizable theoretical picture for the mechanism of QD formation and growth.

  6. Indium Zinc Oxide Mediated Wafer Bonding for III-V/Si Tandem Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C.; Essig, Stephanie; Horowitz, Kelsey A. W.; Woodhouse, Michael; van Hest, Maikel F. A. M.; Norman, Andrew G.; Steiner, Myles A.; Stradins, Paul

    2015-06-14

    Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We investigate the impact of a heavily doped III-V contact layer on the electrical and optical properties of bonded test samples, including the predicted impact on tandem cell performance. We present economic modeling which indicates that the path to commercial viability for bonded cells includes developing low-cost III-V growth and reducing constraints on material smoothness. If these challenges can be surmounted, bonded tandems on Si can be cost-competitive with incumbent PV technologies, especially in low concentration, single axis tracking systems.

  7. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  8. The continuing drama of the half-metal/semiconductor interface

    NARCIS (Netherlands)

    Attema, JJ; de Wijs, GA; de Groot, RA

    2006-01-01

    In this article, based oil electronic Structure calculations, the conditions are discussed under which a genuine half-metallic interface between a heusler C1(b) half-metal and a semiconductor can exist. An explanation is given why for the III-V semiconductors the double anion terminated (111) interf

  9. III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Mørk, Jesper;

    2015-01-01

    Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.......Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA....

  10. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    Science.gov (United States)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  11. III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

    Directory of Open Access Journals (Sweden)

    Gunther Roelkens

    2015-09-01

    Full Text Available In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.

  12. Monte Carlo simulation of III-V material-based MOSFET for high frequency and ultra-low consumption applications.

    Science.gov (United States)

    Shi, Ming; Saint-Martin, Jérôme; Bournel, Arnaud; Maher, Hassan; Renvoise, Michel; Dollfus, Philippe

    2010-11-01

    High-mobility III-V heterostructures are emerging and very promising materials likely to fulfil high-speed and low-power specifications for ambient intelligent applications. The main objective of this work is to theoretically explore the potentialities of MOSFET based on III-V materials with low bandgap and high electron mobility. First, the charge control is studied in III-V MOS structures using a Schrödinger-Poisson solver. Electronic transport in III-V devices is then analyzed using a particle Monte Carlo device simulator. The external access resistances used in the calculations are carefully calibrated on experimental results. The performance of different structures of nanoscale MOS transistor based on III-V materials is evaluated and the quasi-ballistic character of electron transport is compared to that in Si transistors of same gate length. PMID:21137856

  13. Graded core/shell semiconductor nanorods and nanorod barcodes

    Science.gov (United States)

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  14. A study on room-temperature photoluminescence and crystallinity of RF-sputtered GaN for a cost-effective III-V-on-Si platform

    Science.gov (United States)

    Lee, Jeongmin; Kim, Hong-Seok; Han, Jae-Hee; Cho, Seongjae

    2015-11-01

    Recently, Si technology has been searching for ways to develop Si-driven future electronics by overcoming the limitations in its electrical and optical properties through more Moore (MM), morethan- Moore (MtM), and beyond complementary metal-oxide-semiconductor (CMOS) approaches. Among the suggested strategies, III-V-on-Si heterogeneous integration can be a solution that allows the merger of III-V-based devices and Si CMOS logic blocks on Si monolithically and costeffectively. GaN has wide applicability owing to its high electron mobility and large energy bandgap for high-speed low-power transistors and visible light sources. In this work, the room-temperature photoluminescence (PL) characteristics and the crystallinity of GaN-on-Si were empirically studied. GaN was deposited by using RF sputtering on p-type Si substrates. The results show that the peak location near 520 nm does not vary with the wavelength of the excitation laser, which is strongly supported by the fact that the signals are not from higher-order harmonics but are genuinely from the prepared GaN. Further, a sharp peak is observed in the X-ray diffraction (XRD) analysis cooperatively performed with PL experiments. Consequently, partially-crystallized GaN has been obtained on Si by using conventional CMOS processing with a low thermal budget and high cost-effectiveness.

  15. III-V/SOI vertical cavity laser with in-plane output into a Si waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Semenova, Elizaveta;

    2015-01-01

    We experimentally demonstrate an optically-pumped III-V-on-SOI hybrid vertical-cavity laser that outputs light into an in-plane Si waveguide, using CMOS-compatible processes. The laser operates at 1.49 $\\mu$m with a side-mode suppression-ratio of 27 dB and has a similar threshold as long-waveleng......We experimentally demonstrate an optically-pumped III-V-on-SOI hybrid vertical-cavity laser that outputs light into an in-plane Si waveguide, using CMOS-compatible processes. The laser operates at 1.49 $\\mu$m with a side-mode suppression-ratio of 27 dB and has a similar threshold as long...

  16. On the Energy Momentum in Bianchi Type I-III-V-VI0 Space-Time

    CERN Document Server

    Aygun, S; Tarhan, I; Aygun, Melis; Aygun, Sezgin; Tarhan, Ismail

    2006-01-01

    In this study, using the energy momentum definitions of Einstein, Moller, Bergmann-Thomson, Landau-Lifshitz and Papapetrou we compute the total energy-momentum distribution (due to matter and fields including gravitation) of the universe based on general Bianchi type I-III-V-VI(o) space-time and its transforms type I, III, V, VI(o) metrics, respectively. The energy-momentum densities are found exactly same for Einstein and Bergmann-Thomson definitions. The total energy and momentum is found to be zero for Bianchi types I and VI(o) space-times. These results are same as a previous works of Radinschi, Banerjee-Sen, Xulu and Aydogdu-Salti. Another point is that our study agree with previous works of Cooperstock-Israelit, Rosen, Johri et al.

  17. MBE growth technology for high quality strained III-V layers

    Science.gov (United States)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

  18. First principles calculation of material properties of group IV elements and III-V compounds

    OpenAIRE

    Malone, Brad Dean

    2012-01-01

    This thesis presents first principles calculations on the properties of group IV elements and group III-V compounds. It includes investigations into what structure a material is likely to form in, and given that structure, what are its electronic, optical, and lattice dynamical properties as well as what are the properties of defects that might be introduced into the sample. The thesis is divided as follows:Chapter 1 contains some of the conceptual foundations used in the present work. These ...

  19. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell`s efficiency less dependent on materialquality.

  20. Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate

    Directory of Open Access Journals (Sweden)

    Ray-Hua Horng

    2013-01-01

    Full Text Available This study involved analyzing the reliability of two types of III-V solar cells: (1 III-V solar cells grown on new and recycled gallium arsenide (GaAs substrates and (2 the III-V solar cells transferred onto an electroplated nickel (Ni substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.

  1. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  2. Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III-V/SOI technology

    DEFF Research Database (Denmark)

    Spuesens, Thijs; Liu, Liu; Vermeulen, Diedrik;

    2011-01-01

    We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detectors for optical interconnect circuits.......We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detectors for optical interconnect circuits....

  3. Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI$_2$ Ternary Chalcogenides

    OpenAIRE

    Yan, Binghai; Liu, Chao-Xing; Zhang, Hai-Jun; Yam, Chi-Yung; Qi, Xiao-Liang; Frauenheim, Thomas; Zhang, Shou-Cheng

    2010-01-01

    We predict a new class of three dimensional topological insulators in thallium-based III-V-VI$_2$ ternary chalcogenides, including TlBiQ$_2$ and TlSbQ$_2$ (Q = Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the $\\Gamma$ point. The mechanism for topological insulating behavior is elucidated using both first principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe...

  4. III-V/Si photonics by die-to-wafer bonding

    Directory of Open Access Journals (Sweden)

    G. Roelkens

    2007-07-01

    Full Text Available Photonic integrated circuits offer the potential of realizing low-cost, compact optical functions. Silicon-on-insulator (SOI is a promising material platform for this photonic integration, as one can rely on the massive electronics processing infrastructure to process the optical components. However, the integration of a Si laser is hampered by its indirect bandgap. Here, we present the integration of a direct bandgap III-V epitaxial layer on top of the SOI waveguide layer by means of a die-to-wafer bonding process in order to realize near-infrared laser emission on and coupled to SOI.

  5. Material characterizations and devices tests of solar cells based on III-V elements nitrides

    OpenAIRE

    Gorge, Vanessa

    2012-01-01

    Among III-V nitrides, the InGaN material has intensively been studied since the year 2000 for photovoltaic applications, in particular for multi-junction solar cells, thanks to its large tunable band gap covering almost the entire solar spectrum. Then, it will be possible to reach high efficiency and low cost. However, one of the problems of InGaN material is the absence of lattice-matched substrate leading to high defect density which limits device performances. We have thus studied the feas...

  6. Morphology of interior interfaces in dilute nitride III/V material systems; Morphologie innerer Grenzflaechen in verduennt stickstoffhaltigen III/V-Materialsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Oberhoff, S.

    2007-12-03

    This study aims to clarify structure formation processes in dilute N-containing III/V-based material systems, using highly selective etching methods and subsequent atomic force microscopy (AFM) to expose and analyse interior interfaces. In the first part of this study it was directly proved for the first time that adding Sb during growth interruption inhibits the GI-induced structural phase transition and reduces the diffusivity on GaAs and (GaIn)(NAs) surfaces. However, applying Sb during GI does not affect the driving force of the structural phase transition. Therefore a fundamental analysis about the incorporation of Sb into GaAs, Ga(NAs) and (GaIn)(NAs) was carried out in the second part of the study. Using a combination of high resolution X-ray diffraction, transmission electron microscopy and SIMS measurements, it was verified that incorporating Sb into (GaIn)(NAs) causes an increase of the In content and a decrease of the N content. In the third part of the study, novel etching methods for the GaP-based material system Ga(NAsP) are introduced which provide the opportunity to analyse structure formation processes on interior interfaces in this material system by AFM. (orig.)

  7. Recipes for crystal phase design in Au-catalyzed III-V nanowires

    International Nuclear Information System (INIS)

    We develop a kinetic model for the crystal structure of Au-catalyzed III-V nanowires which is capable of describing the wurtzite content as a function of the growth temperature, group V flux, and the nanowire elongation rate. The self-consistency condition with the correct pre-exponent in the Zeldovich nucleation rate allows us to estimate the actual group III concentration in the droplet which corresponds to a given elongation rate. Our model predicts a non-monotonic dependence of the wurtzite percentage on the group III concentration. We analyze relevant experimental data on the preferred crystal structure of Au-catalyzed GaAs nanowires obtained by three different epitaxy techniques and explain why the MBE-grown GaAs nanowires at near 550°C are predominantly wurtzite, while the MOCVD and HVPE-grown GaAs nanowires obtained with very high As fluxes and at very different temperatures (464°C and 715°C) are zincblende. Overall, the model provides some simple recipes for structural design of III-V nanowires by tuning the technologically controlled growth conditions such as temperature and fluxes

  8. Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

    KAUST Repository

    D'Elia, Valerio

    2015-05-25

    Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Energy Momentum Localization for Bianchi I-III-V-VI0 Universe in Teleparallel Gravity

    CERN Document Server

    Aygun, S; Tarhan, I; Aygun, Melis; Aygun, Sezgin; Tarhan, Ismail

    2006-01-01

    In this paper, considering the tele-parallel gravity versions of the Einstein, Bergmann-Thomson and Landau-Lifshitz energy-momentum prescriptions energy and momentum distribution of the universe based on the general Bianchi type I-III-V-VI0 universe and its transforms type I, III, V, VI0 metrics, respectively which includes both the matter and gravitational fields are found. We obtain that Einstein and Bergmann-Thomson definitions of the energy-momentum complexes give the same results, while Landau-Lifshitz's energy-momentum definition does not provide same results for these type of metrics. This results are the same as a previous works of Aygun et al., the Authors investigate the same problem in general relativity by using the Einstein, Moller, Bergmann-Thomson, Landau-Lifshitz (LL) and Papapetrou's definitions. Furthermore, we show that for the Bianci type-I and type-VIo all the formulations give the same result. These results supports the viewpoints of Banerjee-Sen, Xulu and Aydogdu-Salti. Another point is...

  10. X-ray diffraction study of crystal growth dynamics during molecular-beam epitaxy of III-V semiconductors

    International Nuclear Information System (INIS)

    An experimental approach to crystal growth dynamics using surface-sensitive X-ray diffraction techniques is discussed. In crystal growth, two essentially different kinds of dynamics are involved. One is the evolution of a statistical structure averaged over the sample area under consideration. The other is the temporal fluctuation of local structures associated with elemental processes of crystal growth, such as the adsorption, desorption, and diffusion of adatoms. Over the past few decades, combination of a synchrotron X-ray beamlines and specially designed crystal growth systems has played a great role in situ studies of the dynamics of average structures during the epitaxial growth of crystalline films. The recent development of coherent X-ray sources has provided an opportunity to elucidate local structure fluctuation, which is also important for solving many technological problems in crystal growth including the control of the uniformity of self-assembled nanostructures and the suppression of defects. (author)

  11. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

    Directory of Open Access Journals (Sweden)

    Sipahi Guilherme

    2011-01-01

    Full Text Available Abstract The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs. The calculations are done within a self-consistent approach to the k → ⋅ p → theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.

  12. Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

    DEFF Research Database (Denmark)

    Svane, Axel; Christensen, Niels Egede; Gorczyca, I.;

    2010-01-01

    The electronic band structures of InN, GaN, and a hypothetical ordered InGaN2 compound, all in the wurtzite crystal structure, are calculated using the quasiparticle self-consistent GW approximation. This approach leads to band gaps which are significantly improved compared to gaps calculated....... The band gap of InGaN2 is considerably smaller than what would be expected by linear interpolation implying a significant band gap bowing in InGaN alloys....

  13. The MOCVD challenge a survey of GaInAsp-InP and GaInAsp-GaAs for photonic and electronic device applications

    CERN Document Server

    Razeghi, Manijeh

    2010-01-01

    Introduction to Semiconductor Compounds III-V semiconductor alloys III-V semiconductor devices Technology of multilayer growth Growth Technology Metalorganic chemical vapor deposition New non-equilibrium growth techniques In situ Characterization during MOCVD Reflectance anisotropy and ellipsometry Optimization of the growth of III-V binaries by RDS RDS investigation of III-V lattice-matched heterojunctions RDS investigation of III-V lattice-mismatched structures Insights on the growt

  14. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

    Energy Technology Data Exchange (ETDEWEB)

    Knorr Jr, Daniel B., E-mail: daniel.knorr.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Williams, Kristen S. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Baril, Neil F. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Weiland, Conan [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Andzelm, Jan W. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Lenhart, Joseph L., E-mail: joseph.l.lenhart.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Woicik, Joseph C.; Fischer, Daniel A. [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Tidrow, Meimei Z.; Bandara, Sumith V. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Henry, Nathan C. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Corbin Company, Alexandria, VA 22314, United States of America (United States)

    2014-11-30

    Graphical abstract: - Highlights: • HCl and citric acid showed excellent oxide removal on III/V surfaces. • Aminosilane (APTES) passivation coatings were deposited at 1–20 nm on InAs and GaSb. • These coatings showed high ionic nitrogen levels near the interface via XPS. • DFT was used to find adsorption energies of APTES with and without -OH groups. • DFT modeling showed APTES–NH{sub 3}{sup +} hydrogen abstraction to form surface -OH groups. - Abstract: Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In{sub 2}O{sub 3}. Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In{sub 2}O{sub 3} without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20 nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol %. XPS results for the N1s band of APTES showed that

  15. Optical devices for ultra-compact photonic integrated circuits based on III-V/polymer nanowires

    Science.gov (United States)

    Lauvernier, D.; Garidel, S.; Zegaoui, M.; Vilcot, J. P.; Harari, J.; Magnin, V.; Decoster, D.

    2007-04-01

    We demonstrated the potential application of III-V/polymer nanowires for photonic integrated circuits in a previous paper. Hereby, we report the use of a spot size converter based on 2D reverse nanotaper structure in order to improve the coupling efficiency between the nanowire and optical fiber. A total coupling enhancement of up to a factor 60 has been measured from an 80 nm × 300 nm cross-section tip which feeds an 300 nm-side square nanowire at its both ends. Simultaneously, micro-radius bends have been fabricated to increase the circuit density; for a radius of 5 µm, the 90º bend losses were measured as low as 0.60 dB and 0.80 dB for TE and TM polarizations respectively.

  16. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

    Science.gov (United States)

    Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

    2016-02-01

    In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

  17. Electron beam pumped III-V nitride vertical cavity surface emitting lasers grown by molecular beam epitaxy

    Science.gov (United States)

    Ng, Hock Min

    The design and fabrication by molecular beam epitaxy of a prototype vertical cavity laser based on the III-V nitrides were investigated in this work. The bottom mirror of the laser consists of distributed Bragg reflectors (DBRs) based on quarterwave AlN (or AlxGa1-xN) and GaN layers. Such DBRs were designed for maximum reflectivity in the spectral region from 390--600 nm. The epitaxial growth of these two binaries on each other revealed that while AlN grows on GaN in a two-dimensional mode (Frank-van der Merwe mode), GaN grows on AlN in a three-dimensional mode (Stranski-Krastanov mode). In spite of that, DBRs with peak reflectance up to 99% and bandwidths of 45nm were fabricated. The measured reflectance spectra were compared with simulations using the transmission matrix method. The mechanical stability of these DBR structures due to non-uniform distribution of strain arising from lattice or thermal mismatch of the various components were also addressed. The active region of the laser consists of InGaN/GaN multiple quantum wells (MQWs). The existence of up to the third order diffraction peaks in the x-ray diffraction spectra suggests that the interfaces between InGaN and GaN are sharp with little interdiffusion at the growth temperature. The photoluminescence and cathodoluminescence spectra were analyzed to determine the optical quality of the MQWs. The best MQWs were shown to have a single emission peak at 397nm with full width half maximum (FWHM) of 11nm. Cathodoluminescence studies showed that there are spatially localized areas of intense light emission. The complete device was formed on (0001) sapphire substrates using the previously described DBRs as bottom mirrors and the MQWs as the active region. The top mirror of the device consists of metallic silver. The device was pumped by an electron beam from the top mirror side and the light output was collected from the sapphire side. Measurements at 100K showed narrowing of the linewidth with increasing pump

  18. Nano-semiconductors devices and technology

    CERN Document Server

    Iniewski, Krzysztof

    2011-01-01

    With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures--including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials--this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution

  19. The Dependence of Electrical Properties on Miscut Orientation in Direct Bonded III-V Solar Cell Layers

    Science.gov (United States)

    Seal, Mark

    interface morphology. No interfacial layer is present in InP//InP structures before or after rapid thermal processing. It is observed that regions adjacent to the interface undergo a process of atomic redistribution and recrystallize into the same lattice arrangement as the bulk semiconductor. GaAs//InP interfaces are observed to contain regions direct substrate contact with oxide inclusions in between after rapid thermal processing, consistent with previous work on GaAs//GaAs interfaces. It is concluded that for III-V direct wafer bonded heterostructures, interface conductivity is a function of both the relative misorientation between the (001) surfaces and the material pair. The significance of this study is that the additional variable of lattice mismatch does not degrade electrical conductivity through GaAs//InP interfaces. This is significant for applications where heterostructure interface conduction must be controlled, such as the direct bonding of III-V wafers for photovoltaic applications.

  20. Growth of III-V nitrides and buffer layer investigation by pulsed laser deposition

    Science.gov (United States)

    Huang, Tzu-Fang

    1999-11-01

    III-V nitrides have been investigated intensively due to the enormous interest in optoelectronic device applications in the green, blue, violet, and near-ultraviolet regions. Advances in III-V nitride materials for short wavelength light sources will lead to both a revolution in optical disk storage, as higher densities can be achieved with short wavelengths, and a major impact on imaging and graphic technology as high quality red, green, and blue light-emitting diodes (LED) and lasers become available. High quality GaN films have mostly been prepared by metal-organic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE). Compared to these techniques, pulsed laser deposition (PLD) is a relatively new growth technique used widely for the growth of oxide thin films. However, several advantages of PLD make it worthy of study as a method of growing nitrides. The congruent ablation achieved with short UV-laser pulses allows deposition of a multicomponent material by employing a single target and the ability for depositing a wide variety of materials. This advantage makes PLD very suitable for growing multilayer structures sequentially in the same chamber and investigating the effect of buffer layers. Moreover, the strong nonequilibrium growth conditions of PLD may lead to different nucleation and growth processes. In this work, GaN and (Al,Ga)N films have been epitaxially grown on (0001) sapphire substrate by PLD, which has been successfully applied to controlling the lattice constant and band gap of (Al,Ga)N. Room-temperature photoluminescence of PLD-GaN exhibits a strong band edge emission at 3.4eV. The threading dislocations of GaN are predominantly screw dislocations with Burgers vector of while edge dislocations with Burgers vector of 1/3 are the dominant ones in GaN grown by MBE, MOCVD and VPE. This variation observed in defect characteristics may come from the difference in nucleation and growth kinetics between PLD and other

  1. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    Energy Technology Data Exchange (ETDEWEB)

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  2. Hybrid III-V on Si grating as a broadband reflector and a high-Q resonator

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    investigated and the mechanisms leading to these properties are discussed. A HG reflector sample integrating a III-V cap layer with InGaAlAs quantum wells onto a Si grating has been fabricated and its reflection property has been characterized. The HG-based lasers have a promising prospect for silicon...

  3. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

    2016-01-14

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  4. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Science.gov (United States)

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

    2016-01-01

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  5. Methods for forming group III-arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  6. Damage in III-V compounds during focused ion beam milling.

    Science.gov (United States)

    Rubanov, S; Munroe, P R

    2005-10-01

    The damage layers generated in III-V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.

  7. Analysis of III-V Superlattice nB n Device Characteristics

    Science.gov (United States)

    Rhiger, David R.; Smith, Edward P.; Kolasa, Borys P.; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.

    2016-09-01

    Mid-wavelength infrared nB n detectors built with III-V superlattice materials have been tested by means of both capacitance and direct-current methods. By combining the results, it is possible to achieve clear separation of the two components of dark current, namely the generation-recombination (GR) current due to the Shockley-Read-Hall mechanism in the depletion region, and the diffusion current from the neutral region. The GR current component is unambiguously identified by two characteristics: (a) it is a linear function of the depletion width, and (b) its activation energy is approximately one-half the bandgap. The remaining current is shown to be due to diffusion because of its activation energy equaling the full bandgap. In addition, the activation energy of the total measured dark current in each local region of the temperature-bias parameter space is evaluated. We show the benefits of capacitance analysis applied to the nB n device and review some of the requirements for correct measurements. The carrier concentration of the unintentionally doped absorber region is found to be 1.2 × 1014 cm-3 n-type. It is shown that the depletion region resides almost entirely within the absorber. Also, the doping in the nB n barrier is found to be 4 × 1015 cm-3 p-type. Minority-carrier lifetimes estimated from the dark current components are on the order of 10 μs.

  8. Analysis of III-V Superlattice nBn Device Characteristics

    Science.gov (United States)

    Rhiger, David R.; Smith, Edward P.; Kolasa, Borys P.; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.

    2016-04-01

    Mid-wavelength infrared nBn detectors built with III-V superlattice materials have been tested by means of both capacitance and direct-current methods. By combining the results, it is possible to achieve clear separation of the two components of dark current, namely the generation-recombination (GR) current due to the Shockley-Read-Hall mechanism in the depletion region, and the diffusion current from the neutral region. The GR current component is unambiguously identified by two characteristics: (a) it is a linear function of the depletion width, and (b) its activation energy is approximately one-half the bandgap. The remaining current is shown to be due to diffusion because of its activation energy equaling the full bandgap. In addition, the activation energy of the total measured dark current in each local region of the temperature-bias parameter space is evaluated. We show the benefits of capacitance analysis applied to the nBn device and review some of the requirements for correct measurements. The carrier concentration of the unintentionally doped absorber region is found to be 1.2 × 1014 cm-3 n-type. It is shown that the depletion region resides almost entirely within the absorber. Also, the doping in the nBn barrier is found to be 4 × 1015 cm-3 p-type. Minority-carrier lifetimes estimated from the dark current components are on the order of 10 μs.

  9. Laser field induced optical gain in a group III-V quantum wire

    Science.gov (United States)

    Saravanan, Subramanian; Peter, Amalorpavam John; Lee, Chang Woo

    2016-08-01

    Effect of intense high frequency laser field on the electronic and optical properties of heavy hole exciton in an InAsP/InP quantum well wire is investigated taking into consideration of the spatial confinement. Laser field induced exciton binding energies, optical band gap, oscillator strength and the optical gain in the InAs0.8P0.2/InP quantum well wire are studied. The variational formulism is applied to find the respective energies. The laser field induced optical properties are studied. The optical gain as a function of photon energy, in the InAs0.8P0.2/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The results show that the 1.55 μm wavelength for the fibre optic telecommunication applications is achieved for 45 Å wire radius in the absence of laser field intensity whereas the 1.55 μm wavelength is obtained for 40 Å if the amplitude of the laser field amplitude parameter is 50 Å. The characterizing wavelength for telecommunication network is optimized when the intense laser field is applied for the system. It is hoped that the obtained optical gain in the group III-V narrow quantum wire can be applied for fabricating laser sources for achieving the preferred telecommunication wavelength.

  10. Proton irradiation effects on advanced digital and microwave III-V components

    Energy Technology Data Exchange (ETDEWEB)

    Hash, G.L.; Schwank, J.R.; Shaneyfelt, M.R.; Sandoval, C.E.; Connors, M.P.; Sheridan, T.J.; Sexton, F.W.; Slayton, E.M.; Heise, J.A. [Sandia National Labs., Albuquerque, NM (United States); Foster, C. [Indiana University Cyclotron Facility, Bloomington, IN (United States)

    1994-09-01

    A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].

  11. Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides

    CERN Document Server

    Romero-García, Sebastian; Merget, Florian; Shen, Bin; Witzens, Jeremy

    2013-01-01

    We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-P\\'erot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 dB and 3.1 dB, as well as excellent 1 dB horizontal loss misalignment ranges of respectively 2.8 um and 3.8 um (worst case over both i...

  12. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    Directory of Open Access Journals (Sweden)

    Molina-Aldareguia Jon

    2011-01-01

    Full Text Available Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001 substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea

  13. Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO

    Science.gov (United States)

    Aalto, Timo; Harjanne, Mikko; Offrein, Bert-Jan; Caër, Charles; Neumeyr, Christian; Malacarne, Antonio; Guina, Mircea; Sheehan, Robert N.; Peters, Frank H.; Melanen, Petri

    2016-03-01

    We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, +/-0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.

  14. Recent advances on antimony(III/V) compounds with potential activity against tumor cells.

    Science.gov (United States)

    Hadjikakou, S K; Ozturk, I I; Banti, C N; Kourkoumelis, N; Hadjiliadis, N

    2015-12-01

    Antimony one of the heavier pnictogens, has been in medical use against microbes and parasites as well. Antimony-based drugs have been prescribed against leishmaniasis since the parasitic transmission of the tropical disease was understood in the beginning of the 20th century. The activity of arsenic against visceral leishmaniasis led to the synthesis of an array of arsenic-containing parasitic agents, among them the less toxic pentavalent antimonials: Stibosan, Neostibosan, and Ureastibamine. Other antimony drugs followed: sodium stibogluconate (Pentostam) and melglumine antimoniate (Glucantim or Glucantime); both continue to be in use today despite their toxic side effects and increasing loss in potency due to the growing resistance of the parasite against antimony. Antimony compounds and their therapeutic potentials are under consideration from many research groups, while a number of early reviews recording advances of antimony biomedical applications are also available. However, there are only few reports on the screening for antitumor potential of antimony compounds. This review focuses upon results obtained on the anti-proliferative activity of antimony compounds in the past years. This survey shows that antimony(III/V) complexes containing various types of ligands such as thiones, thiosemicarbazones, dithiocarbamates, carboxylic acids, or ketones, nitrogen donor ligands, exhibit selectivity against a variety of cancer cells. The role of the ligand type of the complex is elucidated within this review. The complexes and their biological activity are already reported elsewhere. However quantitative structure-activity relationship (QSAR) modeling studies have been carried out and they are reported for the first time here. PMID:26092367

  15. Low-power optically addressed spatial light modulators using MBE-grown III-V structures

    Science.gov (United States)

    Maserjian, Joseph L.; Larsson, Anders G.

    1991-12-01

    Device approaches are investigated for O-SLMs based on MBE engineered III-V materials and structures. Strong photo-optic effects can be achieved in periodically (delta) -doped multiple quantum well (MQW) structures. The doping-defined barriers serve to separate and delay recombination of the photo-generated electron-hole pairs. One can use this photo-effect to change the internal field across the MQWs giving rise to quantum-confined Stark shift. Alternately, the photo-generated electrons can be used to occupy the quantum wells, which in turn causes exciton quenching and a shift of the absorption edge. Recent work has shown that both of these predicted photo-optic effects can indeed be achieved in such MBE engineered structures. However, these enhanced effects are still insufficient for high contrast modulation with only single or double pass absorption through active layers of practical thickness. We use the asymmetric Fabry-Perot cavity approach which permits extinction of light due to interference of light reflected from the front and back surfaces of the cavity. Modulation of the absorption in the active cavity layers unbalances the cavity and 'turns on' the reflected output signal, thereby allowing large contrast ratios. This approach is realized with an all-MBE- grown structure consisting of a GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror (approximately equals 0.98) and the GaAs surface as the low reflectance mirror (approximately equals 0.3). We use for our active cavities InGaAs/GaAs MQWs separated by npn (delta) -doped GaAs barriers to achieve sensitive photo-optic effect due to exciton quenching. High contrast modulation (> 60:1) is achieved with the Fabry-Perot structures using low power (write signal.

  16. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  17. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  18. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  19. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  20. Is kidney function affecting the management of myocardial infarction? A retrospective cohort study in patients with normal kidney function, chronic kidney disease stage III-V, and ESRD.

    Science.gov (United States)

    Saad, Marc; Karam, Boutros; Faddoul, Geovani; Douaihy, Youssef El; Yacoub, Harout; Baydoun, Hassan; Boumitri, Christine; Barakat, Iskandar; Saifan, Chadi; El-Charabaty, Elie; Sayegh, Suzanne El

    2016-01-01

    Patients with chronic kidney disease (CKD) are three times more likely to have myocardial infarction (MI) and suffer from increased morbidity and higher mortality. Traditional and unique risk factors are prevalent and constitute challenges for the standard of care. However, CKD patients have been largely excluded from clinical trials and little evidence is available to guide evidence-based treatment of coronary artery disease in patients with CKD. Our objective was to assess whether a difference exists in the management of MI (ST-segment elevation myocardial infarction and non-ST-segment elevation myocardial infarction) among patients with normal kidney function, CKD stage III-V, and end-stage renal disease (ESRD) patients. We conducted a retrospective cohort study on patients admitted to Staten Island University Hospital for the diagnosis of MI between January 2005 and December 2012. Patients were assigned to one of three groups according to their kidney function: Data collected on the medical management and the use of statins, platelet inhibitors, beta-blockers, and angiotensin converting enzyme inhibitors/angiotensin receptor blockers were compared among the three cohorts, as well as medical interventions including: catheterization and coronary artery bypass graft (CABG) when indicated. Chi-square test was used to compare the proportions between nominal variables. Binary logistic analysis was used in order to determine associations between treatment modalities and comorbidities, and to account for possible confounding factors. Three hundred and thirty-four patients (mean age 67.2±13.9 years) were included. In terms of management, medical treatment was not different among the three groups. However, cardiac catheterization was performed less in ESRD when compared with no CKD and CKD stage III-V (45.6% vs 74% and 93.9%) (PCardiac catheterization on the other hand carried the strongest association among all studied variables (Pstatistically different. Many

  1. Electrical pumping Fabry–Perot lasing of a III-V layer on a highly doped silicon micro rib

    International Nuclear Information System (INIS)

    Direct-current-pumped Fabry–Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O2 plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry–Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 °C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed. (letter)

  2. Low-Cost Growth of III-V Layers on Si Using Close-Spaced Vapor Transport

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Jason W.; Greenaway, Ann L.; Ritenour, Andrew J.; Davis, Allison L.; Bachman, Benjamin F.; Aloni, Shaul; Boettcher, Shannon W.

    2015-06-14

    Close-spaced vapor transport (CSVT) uses solid precursors to deposit material at high rates and with high precursor utilization. The use of solid precursors could significantly reduce the costs associated with III-V photovoltaics, particularly if growth on Si substrates can be demonstrated. We present preliminary results of the growth of GaAs1-xPx with x ≈ 0.3 and 0.6, showing that CSVT can be used to produce III-V-V’ alloys with band gaps suitable for tandem devices. Additionally, we have grown GaAs on Si by first thermally depositing films of Ge and subsequently depositing GaAs by CSVT. Patterning the Ge into islands prevents cracking due to thermal mismatch and is useful for potential tandem structures.

  3. Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

    Science.gov (United States)

    Zheng, Lucy; Tidrow, Meimei; Aitcheson, Leslie; O'Connor, Jerry; Brown, Steven

    2010-04-01

    The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs. Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III-V

  4. Effective electron mass in low-dimensional semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Sitangshu [Indian Institute of Science, Bangalore (India). Nano Scale Device Research Lab.; Ghatak, Kamakhya Prasad [National Institute of Technology, Agartala, Tripura West (India). Dept. of Electronics and Communication Engineering

    2013-07-01

    Provides a treatment of the effective electron mass in nanodevices. Explains changes of the band structure of optoelectronic semiconductors by intense electric fields and light waves. Gives insight into the electronic behavior in doped semiconductors and their nanostructures. Supports tuition by 200 open problems and questions. This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

  5. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  6. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  7. Effective Electron Mass in Low-Dimensional Semiconductors

    CERN Document Server

    Bhattacharya, Sitangshu

    2013-01-01

    This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped sem...

  8. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  9. Characterization of III-V nanowires for photovoltaic devices using advanced electron microscopy techniques

    DEFF Research Database (Denmark)

    Persson, Johan Mikael

    amounts of defects due to strain. This increases the selection of possible materials to build the photo diodes. However, the strain will not be lower in the region of the junction and can change material properties, such as the bandgap. The substrate the wires are grown on was used as back contact......In this work, the crystal structure of epitaxially grown semiconductor nanowires has been analysed using electron microscopy and to some extent X-ray diffractometry. The goal of the EU project which this work was a part of was to build multi-junction solar cells with nanowires as the main building...... the junction. The strain across the junction measured by the difference in crystal lattice distance extends over a larger volume than the gradual change in composition found for the same sample. Measurements of other nanowires showed a continuously changing tilt along the wires and a local distortion...

  10. Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

    Energy Technology Data Exchange (ETDEWEB)

    Ringel, S. A.

    2008-11-01

    Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.

  11. Deviations from Vegard’s law in ternary III-V alloys

    KAUST Repository

    Murphy, S. T.

    2010-08-03

    Vegard’s law states that, at a constant temperature, the volume of an alloy can be determined from a linear interpolation of its constituent’s volumes. Deviations from this description occur such that volumes are both greater and smaller than the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a tendency, with the exception of AlxGa1−xAs, for the volume of the ternary alloys to be smaller than that determined from the linear interpolation of the volumes of the MAs and BAs binary alloys. Importantly, we establish a simple relationship linking the relative size of the group III atoms in the alloy and the predicted magnitude of the deviation from Vegard’s law.

  12. Factors affecting stress distribution and displacements in crystals III-V grown by Czochralski method with liquid encapsulation

    International Nuclear Information System (INIS)

    A mathematical model based on the finite element method for calculating temperature and shear stress distributions in III-V crystals grown by LEC technique was developed. The calculated temperature are in good agreements with the experimental measurements. The shear stress distribution was calculated for several environmental conditions. The results showed that the magnitude and the distribution of shear stresses are highly sensitive to the crystal environment, including thickness and temperature distribution in boron oxides and the gas. The shear stress is also strongly influenced by interface curvature and cystals radius. (author)

  13. Kontrolle von Spannungsrelaxation und Defektbildung in metamorphen III-V Halbleiterheterostrukturen für hocheffiziente Solarzellen

    OpenAIRE

    Schöne, Jan

    2009-01-01

    Die hier vorliegende Arbeit beschäftigt sich mit der Weiterentwicklung von monolithischen III-V Mehrfach­solarzellen mit drei pn-Übergängen für die Anwendung in konzentrierenden Photovoltaik­systemen. Diese Tripelsolarzellen bestehen aus einer GaInP-Oberzelle, einer GaInAs-Mittelzelle und einer Ger­manium-Unter­zelle, die mittels elektrisch leitender und optisch transparenter Tunneldioden verbunden sind. Derartige Solarzellen erzielen mittlerweile Rekord­wirkungs­grade von mehr als 40 % unter...

  14. Improved Electron Yield and Spin-Polarization from III-V Photocathodes via Bias Enhanced Carrier Drift: Final Report

    International Nuclear Information System (INIS)

    In this DOE STTR program, Saxet Surface Science, with the Stanford Linear Accelerator Center as partner, designed, built and tested photocathode structures such that optimal drift-enhanced spin-polarization from GaAs based photoemitters was achieved with minimal bias supply requirements. The forward bias surface grid composition was optimized for maximum polarization and yield, together with other construction parameters including doping profile. This program has culminated in a cathode bias structure affording increased electron spin polarization when applied to III-V based photocathodes. The optimized bias structure has been incorporated into a cathode mounting and biasing design for use in a polarized electron gun.

  15. X-ray studies of manganese doped III-V materials

    Science.gov (United States)

    Stuckey, Aaron M.

    Two x-ray techniques have been employed to study two classes of semiconductors. X-ray Absorption Fine-structure Spectroscopy (XAFS) was used to examine the Mn environment in the dilute magnetic semiconductors Ga1- xMnxAs and Ga1- x-yMnxBeyAs. X-ray reflectivity was used to characterize the structure of InMnAs heterostructures and InAlP oxide films. XAFS measurements of the Mn local environment were performed in order to match structural parameters such as coordination numbers, bond lengths, and XAFS Debye-Waller factors to the ferromagnetic properties of the materials. The Mn local environment in Ga1-xMn xAs materials with x = 0.01, 0.03, 0.05, and 0.08 was found to be that of a Mn ion substituting for a Ga ion in the GaAs lattice (MnGa). The Mn local environment of the Ga1- x-yMnxBe yAs materials was also measured for six samples with constant x = 0.05 and y = 0.0, 0.01, 0.03, 0.05, 0.08 and 0.11. The Mn local environment depended upon the concentration of Be in the material. At y = 0.0 and y = 0.01 the Mn local environment was found to be that of the MnGa site. The percentage of Mn in this local environment decreased as the Be concentration of the samples increased. Meanwhile, the percentage of Mn in an interstitial site and the percentage of Mn in a precipitate MnAs site both increased. No evidence of Mn-Mn or Mn-Be pairing was found in the Ga1- x-yMnxBeyAs materials. The x-ray reflectivity measurements were used to characterize the structure of InMnAs and InAlP in order to improve understanding of the structural characteristics. This improvement can then be used to improve the growth parameters in order to create materials upon which device development may be undertaken. The InMnAs materials were found to have a structure closely matching the expectations from growth with the addition of a low density surface film. The InAlP oxide films were found to have an additional layer at the interface between the substrate and the oxide film which has higher electron

  16. Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots

    Science.gov (United States)

    Chen, Yan; Zhang, Jiaxiang; Zopf, Michael; Jung, Kyubong; Zhang, Yang; Keil, Robert; Ding, Fei; Schmidt, Oliver G.

    2016-01-01

    Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.

  17. Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors.

    Science.gov (United States)

    Wolf, Omri; Campione, Salvatore; Kim, Jin; Brener, Igal

    2016-09-19

    Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in a focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. We further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors. PMID:27661890

  18. Carrier transport in III-V quantum-dot structures for solar cells or photodetectors

    Science.gov (United States)

    Wang, Wenqi; Wang, Lu; Jiang, Yang; Ma, Ziguang; Sun, Ling; Liu, Jie; Sun, Qingling; Zhao, Bin; Wang, Wenxin; Liu, Wuming; Jia, Haiqiang; Chen, Hong

    2016-09-01

    According to the well-established light-to-electricity conversion theory, resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent, which have been observed in quantum dots without a p-n junction at an external bias. Here, we experimentally observed more than 88% of the resonantly excited photo carriers escaping from InAs quantum dots embedded in a short-circuited p-n junction to form photocurrent. The phenomenon cannot be explained by thermionic emission, tunneling process, and intermediate-band theories. A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p-n junction. The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205) and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

  19. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  20. Advances in High-Efficiency III-V Multijunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Richard R. King

    2007-01-01

    Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured

  1. Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs

    Science.gov (United States)

    Hemmat, Maedeh; Kamal, Mehdi; Afzali-Kusha, Ali; Pedram, Massoud

    2016-10-01

    In this paper, the impact of physical parameter variations on the electrical characteristics of III-V TFETs is investigated. The study is performed on the operations of two optimized ultra-thin 20 nm double-gate transistors. The two device structures are InAs homojunction TFET and InAs-GaAs0.1Sb0.9 heterojunction TFET. The operation parameters are the ON-current, OFF-current, and threshold voltage. The investigation is performed at the device level, using a device simulator and the Monte-Carlo simulation approach is exploited to extract the distribution of electrical parameters in the presence of the process variation. The results reveal that the operation of the transistor is more sensitive to the doping of the source and gate work function compared to other physical parameters. Furthermore, the heterojunction TFETs show less sensitivity to physical parameter variations compared to the homojunction ones.

  2. Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A., E-mail: agodoy@ugr.es; Tienda-Luna, I. M.; Gámiz, F. [Departamento de Electrónica, Universidad de Granada, Av. Fuentenueva S/N, 18071–Granada (Spain)

    2015-07-14

    We discuss the necessity of the exact implicit Momentum Relaxation Time (MRT) solution of the Boltzmann transport equation in order to achieve reliable carrier mobility results in semiconductor nanowires. Firstly, the implicit solution for a 1D electron gas with a isotropic bandstructure is presented resulting in the formulation of a simple matrix system. Using this solution as a reference, the explicit approach is demonstrated to be inaccurate for the calculation of inelastic anisotropic mechanisms such as polar optical phonons, characteristic of III-V materials. Its validity for elastic and isotropic mechanisms is also evaluated. Finally, the implications of the MRT explicit approach inaccuracies on the total mobility of Si and III-V NWs are studied.

  3. Hybrid III-V/SOI single-mode vertical-cavity laser with in-plane emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Semenova, Elizaveta;

    2015-01-01

    We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold.......We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold....

  4. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong;

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF.......Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  5. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

    Science.gov (United States)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

  6. Development and application of the S/PHI/nX library. First-principles calculations of thermodynamic properties of III-V semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Boeck, Sixten

    2009-09-03

    The objective of this thesis was the development and implementation of a new physics meta-language which simplifies the development of algorithms in computational materials design (CMD) significantly. (i) State-of- the-art computer science techniques have been applied or developed in this work to provide language elements to express algebraic expressions efficiently on modern computer platforms. (ii) Quantum mechanical algorithms are crucial in CMD. The new meta-language supports the Dirac notation to implement such algorithms in the native language of physicists. (iii) The language is completed by elements to express equations of motions efficiently which is required for implementing structural algorithms such as molecular dynamics. A major goal of this work was to combine an intuitive algebra/physics programming interface with high runtime performance. Therefore, a major challenge was to allow the compiler to ''understand'' the algebraic or even quantum mechanical context. Only with this knowledge the compiler can generate machine code which is (at least) as efficient as manually optimized code. This has been accomplished by deriving new techniques, such as fully automatic BLAS/LAPACK function mapping, algebra type mapping, and the application of sophisticated template techniques. Further details like memory management, efficiently exploiting the computer's level caches and arithmetic pipelines which had formerly to be addressed by physicists are in our approach entirely shifted to the compiler. With the new technique of virtual templates the compiler can now even detect the quantum mechanical context of Dirac elements. While Dirac projectors, scalar products with metrics, Dirac operators, and Dirac vectors look syntactically very similar, this technique allows the compiler to recognize these terms and generate the proper highly efficient function calls. Equations of motions can be intuitively expressed exploiting transformation pipelines which we developed in this work. In order to demonstrate the power of the this approach the full-featured plane-wave framework S/PHI/nX has been developed based on the new meta-language. The S/PHI/nX source code is remarkably short and transparent which simplifies code maintenance and the introduction of new sophisticated algorithms. Various benchmarks which have been conducted in this study compare S/PHI/nX with other state-of-the-art plane-wave packages with respect to runtime performance and accuracy. Based on these calculations we verified the general trends of phonon spectra, the location and amplitudes of the thermal anomalies of these systems. (orig.)

  7. Magneto-electrical transport through MBE-grown III-V semiconductor nanostructures. From zero- to one-dimensional type of transport

    International Nuclear Information System (INIS)

    From the development of the first transistor in 1947, great interest has been directed towards the technological development of semiconducting devices and the investigation of their physical properties. A very vital field within this topic focuses on the electrical transport through low-dimensional structures, where the quantum confinement of charge carriers leads to the observation of a wide variety of phenomena that, in their turn, can give an interesting insight on the fundamental properties of the structures under examination. In the present thesis, we will start analyzing zero-dimensional systems, focusing on how electrons localized onto an island can take part in the transport through the whole system; by precisely tuning the tunnel coupling strength between this island and its surroundings, we will then show how it is possible to move from a zero- to a one-dimensional system. Afterwards, the inverse path will be studied: a one-dimensional system is electrically characterized, proving itself to split up due to disorder into several zero-dimensional structures. (orig.)

  8. Estudio de las películas de paladio como barreras de difusión para contactos ohmicos en semiconductores III-V

    OpenAIRE

    M. Galván-Arellano; I. Kudriavtsev; G. Romero-Paredes; R. Peña-Sierra; J. Díaz-Reyes

    2005-01-01

    Se reporta el desarrollo de una metodología para formar contactos ohmicos en GaSb y GaAs con barrera de difusión de paladio. Se presentan resultados del estudio de las superficies semiconductoras durante la fase de limpieza, y previo al depósito de las aleaciones metálicas de contacto. Se describe la metodología para depositar películas de Pd sobre GaSb y GaAs. Se demuestra la acción de las películas de paladio como barrera de difusión por los resultados del análisis de composición química po...

  9. Magneto-electrical transport through MBE-grown III-V semiconductor nanostructures. From zero- to one-dimensional type of transport

    Energy Technology Data Exchange (ETDEWEB)

    Storace, Eleonora

    2009-07-08

    From the development of the first transistor in 1947, great interest has been directed towards the technological development of semiconducting devices and the investigation of their physical properties. A very vital field within this topic focuses on the electrical transport through low-dimensional structures, where the quantum confinement of charge carriers leads to the observation of a wide variety of phenomena that, in their turn, can give an interesting insight on the fundamental properties of the structures under examination. In the present thesis, we will start analyzing zero-dimensional systems, focusing on how electrons localized onto an island can take part in the transport through the whole system; by precisely tuning the tunnel coupling strength between this island and its surroundings, we will then show how it is possible to move from a zero- to a one-dimensional system. Afterwards, the inverse path will be studied: a one-dimensional system is electrically characterized, proving itself to split up due to disorder into several zero-dimensional structures. (orig.)

  10. Three-Phonon Phase Space as an Indicator of the Lattice Thermal Conductivity in Semiconductors

    Science.gov (United States)

    Lindsay, L.; Broido, D. A.

    2007-03-01

    The room temperature lattice thermal conductivity of many semiconductors is limited primarily by three-phonon scattering processes arising from the anharmonicity of the interatomic potential. We employ an adiabatic bond charge model [1,2] for the phonon dispersions to calculate the phase space for three-phonon scattering events of several group IV and III-V semiconductors. We find that the amount of phase space available for this scattering in materials varies inversely with their measured thermal conductivities. Anomalous behavior occurs in III-V materials having large mass differences between cation and anion, which we explain in terms of the severely restricted three-phonon phase space arising from the large gap between acoustic and optic phonon branches. [1] W. Weber, Physical Review B 15, 4789 (1977). [2] K. C. Rustagi and W. Weber, Solid State Communications 18, 673 (1976).

  11. Passivation of electrically active centers by Hydrogen and Lithium in Semiconductors

    CERN Multimedia

    2002-01-01

    The hyperfine technique of Perturbed Angular Correlation Spectroscopy (PAC) has proven to be excellently suited for the microscopic investigation of impurity complexes in semiconductors. But this method is seriously limited by the small number of chemically different isotopes which are suitable for PAC measurements and represent electrically active centers in semiconductors. This bottleneck can be widely overcome by the ISOLDE facility which provides a great variety of shortliving PAC isotopes. The probe atom $^{111m}$Cd, provided by ISOLDE opened the first successful access to PAC investigations of III-V compounds and enabled also the first PAC experiments on double acceptors in silicon and germamum. \\\\ \\\\ At the new ISOLDE facility our experiments were concentrated on the passivation of electrically active centres by hydrogen and lithium in Si, Ge and III-V compounds. Experiments on $^{111m}$Cd in Ge revealed the formation of two different acceptor hydrogen and two different acceptor lithium complexes respe...

  12. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  13. Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling

    CERN Document Server

    Moussa, H; Meriadec, C; Manin, L; Sagnes, I; Raj, R

    2002-01-01

    Deep reactive ion etching of III-V multilayer structures is an important issue for long wavelength vertical cavity surface emitting laser (VCSELs) where full laser structures are usually very thick. Test etchings were performed on GaAs/Al sub x Ga sub 1 sub - sub x As Bragg mirror structures and monitored using laser reflectometry at 651.4 nm. In order to perform very deep etching, up to 9 mu m, we designed and fabricated a special two-level mask made up of a thick nitride layer and a thin nickel layer. The etching rate is a complex function of many parameters and may change from run to run for similar structures. Therefore, it is important to have a method to control accurately the process in situ by continuously matching, experimental curves with the results of the reflectivity modeling. Here, we present a model, based on the Abeles matrix method, of the normal incidence reflectivity of a multilayer stack as a function of etch depth. Comparison between the model and the observed reflectivity variation durin...

  14. III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

    Science.gov (United States)

    Datta, Kanak; Khosru, Quazi D. M.

    2016-04-01

    In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthreshold and short channel performance is observed and presented. The ballistic simulation result has also been used to observe the electrostatic performance and Capacitance-Voltage characteristics of the device. With constant urge to keep in pace with Moore's law as well as aggressive scaling and device operation reaching near ballistic limit, a full quantum transport study at 10 nm gate length is necessary. Our simulation reveals an increase in device drain current with increasing channel cross-section. However short channel performance and subthreshold performance get degraded with channel cross-section increment. Increasing device cross-section lowers threshold voltage of the device. The effect of gate oxide thickness on ballistic device performance is also observed. Increase in top gate oxide thickness affects device performance only upto a certain value. The thickness of the top gate oxide however shows no apparent effect on device threshold voltage. The ballistic simulation study has been further used to extract ballistic injection velocity of the carrier and ballistic carrier mobility in the channel. The effect of device dimension and gate oxide thickness on ballistic velocity and effective carrier mobility is also presented.

  15. Techno-Economic Analysis of Three Different Substrate Removal and Reuse Strategies for III-V Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey; Woodhouse, Michael; Sopori, Bhushan; VanSant, Kaitlyn; Basore, Paul

    2016-09-01

    The high cost of wafers suitable for epitaxial deposition of III-V solar cells has been a primary barrier to widespread use of these cells in low-concentration and one-sun terrestrial solar applications. A possible solution is to reuse the substrate many times, thus spreading its cost across many cells. We performed a bottom-up techno-economic analysis of three different strategies for substrate reuse in high-volume manufacturing: epitaxial lift-off, spalling, and the use of a porous germanium release layer. The analysis shows that the potential cost reduction resulting from substrate reuse is limited in all three strategies--not by the number of reuse cycles achievable, but by the costs that are incurred in each cycle to prepare the substrate for another epitaxial deposition. The dominant substrate-preparation cost component is different for each of the three strategies, and the cost-ranking of these strategies is subject to change if future developments substantially reduce the cost of epitaxial deposition.

  16. Analytic Franz-Keldysh effect in one-dimensional polar semiconductors

    CERN Document Server

    Pedersen, T G

    2003-01-01

    The optical properties of a one-dimensional polar semiconductor in a strong electric field are considered. This class of materials includes non-centrosymmetric III-V inorganic quantum wires but also polar conjugated polymers such as polymethineimine. The polar Franz-Keldysh effect is derived via an analytic expression for the complex dielectric constant including line broadening and linear field terms. Results for the high-field non-perturbative regime as well as the low-field expansion are presented.

  17. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  18. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl2Ca2Ba2Cu3Oy thin films

  19. Interacting binaries

    CERN Document Server

    Shore, S N; van den Heuvel, EPJ

    1994-01-01

    This volume contains lecture notes presented at the 22nd Advanced Course of the Swiss Society for Astrophysics and Astronomy. The contributors deal with symbiotic stars, cataclysmic variables, massive binaries and X-ray binaries, in an attempt to provide a better understanding of stellar evolution.

  20. Tailoring spin-orbit torque in diluted magnetic semiconductors

    KAUST Repository

    Li, Hang

    2013-05-16

    We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

  1. A Semiconductor Under Insulator Technology in Indium Phosphide

    CERN Document Server

    Mnaymneh, Khaled; Frédérick, Simon; Lapointe, Jean; Poole, Philip J; Williams, Robin L

    2012-01-01

    This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupling techniques used in SOI, such as sub-micron coupling, for planar membrane III-V systems.

  2. EDITORIAL: The 21st Nordic Semiconductor Meeting

    Science.gov (United States)

    2006-09-01

    This Topical Issue contains works presented at the 21st Nordic Semiconductor Meeting (21NSM) held at Sundvolden, Norway, 18-19 August 2005. The institutions supporting 21NSM were: University of Oslo, SINTEF, the Norwegian Defense Research Establishment and Vestfold University College. The Nordic Semiconductor Meeting has become an international forum that has been held every other year in a relay fashion in Denmark, Finland, Iceland, Norway and Sweden. The focus of the meeting has been on original research and science being carried out on semiconductor materials, devices and systems. Reports on industrial activity have usually been featured at the meetings. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. For the last five meetings the proceedings have been printed in a dedicated volume of Physica Scripta in the Topical Issue series. The papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the expected high standards of the series. The range of topics covered by this volume is broad, reflecting the call for papers; most of the papers have an element of materials science and the largest portion of these deal with other semiconductor materials other than silicon. The 21NSM was supported by the following sponsors: Renewable Energy Corporation (REC), EMF III-V Innovations (EMF), and the Nordic Research Board (NordForsk). Terje G Finstad Department of Physics, University of Oslo, Norway Andrej Y Kuznetsov and Bengt G Svensson Centre for Materials Science and Nanotechnology, University of Oslo, Norway

  3. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Russell D. Dupuis

    2004-09-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diode structures were processed and characterized.

  4. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Russell Dupuis

    2007-06-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers whole years of the three-year program 'Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications'. The research activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda}{approx}540nm green LEDs. We have also studied (1) the thermal annealing effect on blue and green LED active region during the p-type layer growth; (2) the effect of growth parameters and structural factors for LED active region on electroluminescence properties; (3) the effect of substrates and orientation on electrical and electro-optical properties of green LEDs. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {omega}-cm) and improved optical quality green LED active region emitting at {approx}540nm by electroluminescence. The LEDs with p-InGaN layer can act as a quantum-confined Stark effect mitigation layer by reducing strain in the QW. We also have achieved (projected) peak IQE of {approx}25% at {lambda}{approx}530 nm and of {approx}13% at {lambda}{approx}545 nm. Visible LEDs on a non-polar substrate using (11-20) {alpha}-plane bulk substrates. The absence of quantum-confined Stark effect was confirmed but further improvement in electrical and optical properties is required.

  5. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Russell D. Dupuis

    2006-01-01

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect on blue and green LED active region during the p-type layer growth. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {Omega}-cm) and improved optical quality green LED active region emitting at {lambda} {approx}540nm by electroluminescence. The active region of the green LEDs was found to be much more sensitive to the thermal annealing effect during the p-type layer growth than that of the blue LEDs. We have designed grown, fabricated green LED structures for both 520 nm and 540 nm for the evaluation of second year green LED development.

  6. Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghatak, K.P. [Department of Electronic Science, The University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Bhattacharya, S. [Post Graduate Department of Computer Science, St. Xavier' s College, 30 Park Street, Kolkata 700 016 (India); Pahari, S. [Department of Administration, Jadavpur University, Kolkata 700 032 (India); De, D. [Department of Computer Science and Engineering, West Bengal University of Technology, B. F. 142, Sector I, Salt Lake, Kolkata 700 064 (India); Ghosh, S.; Mitra, M. [Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Howrah 711 103 (India)

    2008-04-15

    We study theoretically the influence of light waves on the thermoelectric power under large magnetic field (TPM) for III-V, ternary and quaternary materials, whose unperturbed energy-band structures, are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings in the presence of external photoexcitation. It has been found by taking n-InAs, n-InSb, n-Hg{sub 1-x}Cd{sub x}Te and n-In{sub 1-x}Ga{sub x}As{sub y}P{sub 1-y} lattice matched to InP as examples that the TPM decreases with increase in electron concentration, and increases with increase in intensity and wavelength, respectively in various manners. The strong dependence of the TPM on both light intensity and wavelength reflects the direct signature of light waves that is in direct contrast as compared with the corresponding bulk specimens of the said materials in the absence of external photoexcitation. The rate of change is totally band-structure dependent and is significantly influenced by the presence of the different energy-band constants. The well-known result for the TPM for nondegenerate wide-gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have also suggested the experimental methods of determining the Einstein relation for the diffusivity:mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  7. Readout electronics for the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    The binary readout architecture as a base-line and the analogue one as a fall-forward option have been adopted recently by the ATLAS semiconductor tracker group for the readout of silicon strip detectors. A brief overview of different architectures considered before as well as the status of the binary readout development will be presented. A new idea of the binary readout architecture employing a dual threshold scheme will be discussed and new results obtained for the full analogue readout chip realised in the DMILL technology will be reported. (orig.)

  8. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  9. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  10. Increased bismuth concentration in MBE GaAs{sub 1−x}Bi{sub x} films by oscillating III/V flux ratio during growth

    Energy Technology Data Exchange (ETDEWEB)

    Wood, Adam W., E-mail: awood4@wisc.edu; Babcock, Susan E. [Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706 (United States); Li, Jincheng; Brown, April S. [Electrical and Computer Engineering, Duke University, Durham, North Carolina 27707 (United States)

    2015-05-15

    The authors have examined bismuth concentration profiles in GaAs{sub 1−x}Bi{sub x} films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in conjunction with x-ray diffraction. Samples were grown with a gradient in each of the component fluxes, and therefore, the III/V ratio across the substrate. Rotating the sample during growth exposed the growth surface to an oscillating III/V flux ratio. Sinusoidal [Bi] profiles resulted in the growth direction, the wavelength and number of which were consistent with the growth rate and the rate of substrate rotation. However, the magnitude of [Bi] in the observed fluctuations was greater than the maximum [Bi] achieved using the same Bi flux and Ga/As flux ratios in steady-state conditions on a stationary substrate, suggesting that varying the III/V flux ratio during growth promotes the incorporation of Bi in GaAs{sub 1−x}Bi{sub x} films. A proposed qualitative model for how this enhancement might occur hypothesizes a critical role for alternating growth and shrinkage of Ga-Bi predroplet clusters on the surface as the growing material is rotated through Ga-rich and As-rich flux compositions.

  11. Analytical solutions for elastic binary nanotubes of arbitrary chirality

    Science.gov (United States)

    Jiang, Lai; Guo, Wanlin

    2016-09-01

    Analytical solutions for the elastic properties of a variety of binary nanotubes with arbitrary chirality are obtained through the study of systematic molecular mechanics. This molecular mechanics model is first extended to chiral binary nanotubes by introducing an additional out-of-plane inversion term into the so-called stick-spiral model, which results from the polar bonds and the buckling of binary graphitic crystals. The closed-form expressions for the longitudinal and circumferential Young's modulus and Poisson's ratio of chiral binary nanotubes are derived as functions of the tube diameter. The obtained inversion force constants are negative for all types of binary nanotubes, and the predicted tube stiffness is lower than that by the former stick-spiral model without consideration of the inversion term, reflecting the softening effect of the buckling on the elastic properties of binary nanotubes. The obtained properties are shown to be comparable to available density functional theory calculated results and to be chirality and size sensitive. The developed model and explicit solutions provide a systematic understanding of the mechanical performance of binary nanotubes consisting of III-V and II-VI group elements.

  12. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    Science.gov (United States)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  13. Lighting market alchemy: Will we find a pot of gold at the end of the III-V rainbow?

    Science.gov (United States)

    Conway, Kathryn M.

    2004-12-01

    With a focus on visible spectrum light emitting diodes (LEDs), three questions frame this update. First, what are the market and financial outlooks for light-producing compound semiconductor materials and devices? Second, which applications offer the greatest growth potential for the next five to ten years and with which technologies will they likely compete for market share? Third, how can photonics experts contribute to accelerated successes for LEDs and other solid-state lighting technologies such as quantum dots? Using the rainbow as a metaphor for the market, the author examines developments in single color, multiple color and "white light" products.

  14. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    Science.gov (United States)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  15. Nuclear Electrical and Optical Studies of Hydrogen in Semiconductors.

    CERN Multimedia

    Dietrich, M; Toulemonde, M

    2002-01-01

    During the last years, the understanding of H and its interaction with dopant atoms in Si, Ge and III-V semiconductors has improved considerably concerning the stability of the formed complexes their structural arrangements, and the implications of this interaction on the electrical properties of the semiconductors " passivation " The perturbed angular correlation technique (PAC) has contributed to the understanding of this phenomena on an atomistic scale using radioactive isotopes provided by ISOLDE. \\\\ \\\\The aim of the proposed experiments is twofold: \\\\ \\\\\\begin{enumerate} \\item The H passivation mechanism of acceptors in GaN and ternary III-V compounds (AlGaAs, GaInP, AlGaN) shall be investigated, using the PAC probe atom $^{111m}$Cd as a 'representative' of group II-B metal acceptors. The problems addressed in these technological important systems are microscopic structure, formation and stability of the hydrogen correlated complexes as function of doping and stoichiometry (i.e. the size of the band gap)...

  16. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  17. Microscopical Studies of Structural and Electronic Properties of Semiconductors

    CERN Multimedia

    2002-01-01

    The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

  18. Semiconductor sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hartmann, Frank, E-mail: frank.hartmann@cern.c [Institut fuer Experimentelle Kernphysik, KIT, Wolfgang-Gaede-Str. 1, Karlsruhe 76131 (Germany)

    2011-02-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  19. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  20. Semiconductor Spintronics

    OpenAIRE

    Fabian, J.; Matos-Abiague, A.; Ertler, C.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge ...

  1. Semiconductor Thermistors

    OpenAIRE

    McCammon, Dan

    2005-01-01

    Semiconductor thermistors operating in the variable range hopping conduction regime have been used in thermal detectors of all kinds for more than fifty years. Their use in sensitive bolometers for infrared astronomy was a highly developed empirical art even before the basic physics of the conduction mechanism was understood. Today we are gradually obtaining a better understanding of these devices, and with improvements in fabrication technologies thermometers can now be designed and built wi...

  2. A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

    Directory of Open Access Journals (Sweden)

    Andrzej Wolkenberg

    2013-01-01

    Full Text Available An electrical conduction versus temperature model using a Hall device was developed. In the case of InAs, InGaAs, and GaAs MBE epilayers, the prediction agrees well with the experimental results. Herein, we explain here how these calculated fractions of total conductivity describe the measured values. The method allows for the calculation of the carrier concentration and mobility of each component of a multicarrier system. The extracted concentrations are used to characterise the different components of charge transport in the active layer. The conductance values G [S] of these components of charge transport were obtained. Also the scattering events for the investigated samples are presented. The analysis of the experimental results for three semiconductor compositions and different concentrations demonstrates the utility of our method in comparing the conductance of each component of the multilayered system as a function of temperature.

  3. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

    Science.gov (United States)

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

    2016-04-01

    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology. PMID:26824274

  4. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

    Science.gov (United States)

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

    2016-04-01

    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology.

  5. Binary Planets

    Science.gov (United States)

    Ryan, Keegan; Nakajima, Miki; Stevenson, David J.

    2014-11-01

    Can a bound pair of similar mass terrestrial planets exist? We are interested here in bodies with a mass ratio of ~ 3:1 or less (so Pluto/Charon or Earth/Moon do not qualify) and we do not regard the absence of any such discoveries in the Kepler data set to be significant since the tidal decay and merger of a close binary is prohibitively fast well inside of 1AU. SPH simulations of equal mass “Earths” were carried out to seek an answer to this question, assuming encounters that were only slightly more energetic than parabolic (zero energy). We were interested in whether the collision or near collision of two similar mass bodies would lead to a binary in which the two bodies remain largely intact, effectively a tidal capture hypothesis though with the tidal distortion being very large. Necessarily, the angular momentum of such an encounter will lead to bodies separated by only a few planetary radii if capture occurs. Consistent with previous work, mostly by Canup, we find that most impacts are disruptive, leading to a dominant mass body surrounded by a disk from which a secondary forms whose mass is small compared to the primary, hence not a binary planet by our adopted definition. However, larger impact parameter “kissing” collisions were found to produce binaries because the dissipation upon first encounter was sufficient to provide a bound orbit that was then rung down by tides to an end state where the planets are only a few planetary radii apart. The long computational times for these simulation make it difficult to fully map the phase space of encounters for which this outcome is likely but the indications are that the probability is not vanishingly small and since planetary encounters are a plausible part of planet formation, we expect binary planets to exist and be a non-negligible fraction of the larger orbital radius exoplanets awaiting discovery.

  6. Highly tunable heterogeneously integrated III-V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band.

    Science.gov (United States)

    Duprez, Helene; Jany, Christophe; Seassal, Christian; Ben Bakir, Badhise

    2016-09-01

    We report on the design, fabrication and performance of the first hetero-integrated III-V on silicon sampled-grating distributed Bragg reflector lasers (SGDBR) operating in the O-band and based on direct bonding and adiabatic coupling. Two devices with different geometric parameters are presented both showing an output power in the Si waveguide as high as 7.5 mW and a continuous tuning range of 27 and 35 nm respectively with a side mode suppression ration higher than 35 dB. PMID:27607693

  7. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  8. Binary effectivity rules

    DEFF Research Database (Denmark)

    Keiding, Hans; Peleg, Bezalel

    2006-01-01

    is binary if it is rationalized by an acyclic binary relation. The foregoing result motivates our definition of a binary effectivity rule as the effectivity rule of some binary SCR. A binary SCR is regular if it satisfies unanimity, monotonicity, and independence of infeasible alternatives. A binary...

  9. Semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Ito, K.; Shyuue, M.

    1982-09-25

    A distributed feedback semiconductor laser is proposed which generates several beams with equal wavelengths in different directions. For this purpose, 1 millimeter grooves are cut into the surface of an n-type conductance GaAs plate in three different directions; these grooves form a diffraction grating. The center of this plate has no grooves and is bombarded by an He/Ne laser beam. The diffraction gratings provide resonance properties and generate laser beams with wavelengths of 8850, 9000 and 9200 angstroms.

  10. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  11. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  12. Demonstration of 12.2% wall plug efficiency in uncooled single mode external-cavity tunable Si/III-V hybrid laser.

    Science.gov (United States)

    Lee, Jin-Hyoung; Bovington, Jock; Shubin, Ivan; Luo, Ying; Yao, Jin; Lin, Shiyun; Cunningham, John E; Raj, Kannan; Krishnamoorthy, Ashok V; Zheng, Xuezhe

    2015-05-01

    A Si/III-V hybrid laser has been a highly sought after device for energy-efficient and cost-effective high-speed silicon photonics communication. We present a high wall-plug efficiency external-cavity hybrid laser created by integrating an independently optimized SOI ring reflector and a III-V gain chip. In our demonstration, the uncooled integrated laser achieved a waveguide-coupled wall-plug efficiency of 12.2% at room temperature with an optical output power of ~10 mW. The laser operated single-mode near 1550 nm with a linewidth of 0.22 pm. This is a tunable light source with 8 nm wavelength tuning range. A proof-of-concept laser wavelength stabilization technique has also been demonstrated. Using a simple feedback loop, we achieved mode-hop-free operation in a packaged external-cavity hybrid laser as bias current was varied by 60mA. PMID:25969296

  13. Desktop setup for binary holograms

    Science.gov (United States)

    Ginter, Olaf; Rothe, Hendrik

    1996-08-01

    Binary gratings as holograms itself or as photographic masking tools for further fabrication steps can fulfill a lot of applications. The commonly used semiconductor technologies for direct writing of high resolution structures are often too expensive. On the other hand computer plots at a reasonable price with photographic reduction do not meet the needs of precision e.g. for interferometric inspection. The lack of cheap and reliable instruments for direct writing in an appropriate resolution is still a problem in fabricating synthetic holograms. Using off-the-shelf components a direct writing plotter for binary patterns can be built at moderate costs. Typical design rules as well as experimental results are given and the final setup is introduced.

  14. Semiconductor nanocrystals formed in SiO{sub 2} by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

    1994-11-01

    Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO{sub 2} by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO{sub 2}. Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO{sub 2}.

  15. Semiconductor laser. Halbleiterlaser

    Energy Technology Data Exchange (ETDEWEB)

    Wuenstel, K.; Gohla, B.; Tegude, F.; Luz, G.; Hildebrand, O.

    1987-08-27

    A highly modulable semiconductor laser and a process for its manufacture are described. The semiconductor laser has a substrate, a stack of semiconductor layers and electrical contacts. To reduce the capacity, the width of the stack of semiconductor layers is reduced at the sides by anisotropic etching. The electrical contacts are situated on the same side of the substrate and are applied in the same stage of the process. The semiconductor laser is suitable for monolithic integration in other components.

  16. The ATLAS semiconductor tracker

    CERN Document Server

    Mikuz, Marko

    2003-01-01

    The ATLAS Semiconductor Tracker (SCT) is presented. About 16000 silicon micro-strip sensors with a total active surface of over 60 m **2 and with 6.3 million read-out channels are built into 4088 modules arranged into four barrel layers and nine disks covering each of the forward regions up to an eta of 2.5. Challenges are imposed by the hostile radiation environment with particle fluences up to 2 multiplied by 10**1**4 cm**-**2 1 MeV neutron NIEL equivalent and 100 kGy TID, the 25 ns LHC bunch crossing time and the need for a hermetic, lightweight tracker. The solution adopted is carefully designed strip detectors operated at -7 degree C, biased up to 500 V and read out by binary radhard fast BiCMOS electronics. A zero-CTE carbon fibre structure provides mechanical support. 30 kW of power are supplied on aluminiutn/Kapton tapes and cooled by C//3F//8 evaporative cooling. Data and commands are transferred by optical links. Prototypes of detector modules have been built, irradiated to the maximum expected flue...

  17. Mid-term results after operative treatment of rockwood grade III-V Acromioclavicular joint dislocations with an AC-hook-plate

    Directory of Open Access Journals (Sweden)

    Kienast B

    2011-02-01

    Full Text Available Abstract Acromioclavicular joint dislocations often occur in athletic, young patients after blunt force to the shoulder. Several static and dynamic operative procedures with or without primary ligament replacement have been described. Between February 2003 and March 2009 we treated 313 patients suffering from Rockwood III-V lesions of the AC joint with an AC-hook plate. 225 (72% of these patients could be followed up. Mean operation time was 42 minutes in the conventional group and 47 minutes in the minimal invasive group. The postoperative pain on a scale from 1 to 10 (VAS-scale was rated 2.7 in the conventional group and 2.2 in the minimal invasive group. Taft score showed very good and good results in 189 patients (84%. Constant score showed an average of 92.4 of 100 possible points with 89% excellent and good results and 11% satisfying results. All patients had some degree of pain or discomfort with the hookplate in place. These symptoms were relieved after removal of the plate. The overall complication rate was 10.6%. There were 6 superficial soft tissue infections, 1 fracture of the acromion, 7 redislocations after removal of the hook-plate. We observed 4 broken hooks which could be removed at the time of plate removal, 4 seromas and 2 cases of lateral clavicle bone infection, which required early removal of the plate. We can conclude that clavicle hook plate is a convenient device for the surgical treatment of Rockwood Grade III-V dislocations, giving good mid-term results with a low overall complication rate compared to the literature. Early functional therapy is possible and can avoid limitations in postoperative shoulder function.

  18. A review of thermal processing in the subsecond range: semiconductors and beyond

    Science.gov (United States)

    Rebohle, Lars; Prucnal, Slawomir; Skorupa, Wolfgang

    2016-10-01

    Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultra-shallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

  19. Fowler-Nordheim field emission. Effects in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Sitangshu [Indian Institute of Science, Bangalore (India). Nano Scale Device Research Laboratory; Ghatak, Kamakhya Prasad [Calcutta Univ. (India). Dept. of Electronics Science

    2012-07-01

    This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb{sub 2}, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi{sub 2}Te{sub 3}, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids. (orig.)

  20. Fowler-Nordheim field emission effects in semiconductor nanostructures

    CERN Document Server

    Bhattacharya, Sitangshu

    2012-01-01

    This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The boo...

  1. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors

    OpenAIRE

    J. Masek; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B.L.; Jungwirth, T.

    2006-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP or (Al,Ga)As which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. Wh...

  2. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  3. Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires

    OpenAIRE

    Hasegawa, Hideki; Kasai, Seiya

    2001-01-01

    Previous quantum device research has been done on discrete device levels and lacks a clear vision for high density integration. This paper proposes a new, simple and realistic approach for quantum large scale integrated circuits (QLSIs) where a binary-decision diagram (BDD) logic architecture is implemented by BDD node devices based on quantum wire transistors (QWTrs) and single electron transistors (SETs) realized by the Schottky in-plane gate (IPG) and wrap-gate (WPG) control of III-V hexag...

  4. Mechanisms of double magnetic exchange in dilute magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fleurov, V. E-mail: fleurov@post.tau.ac.il; Kikoin, K.; Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M

    2004-05-01

    A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T{sub c} estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism.

  5. Laser dicing of silicon and composite semiconductor materials

    Science.gov (United States)

    Sibailly, Ochelio; Richerzhagen, Bernold

    2004-07-01

    Dicing of semiconductor wafers is an example of an application requiring a processing quality superior to what can be achieved using classical laser techniques. For this reason, sawing the wafers with a diamond-edged blade has been developed into a high-tech process, that guarantees good and reliable cuts for Silicon wafers of more than 300 microns thickness. Today, wafer thickness is getting thinner; down to 50 microns and also more brittle III-V compound semiconductors are used more frequently. On these thin wafers; the laser begins again to compete with the diamond saw, because of laser cutting-quality and cutting-speed, are increasing with decreasing wafer thickness. Conventional laser cutting however has the disadvantages of debris deposition on the wafer surface, weak chip fracture strength because of heat induced micro cracks. An elegant way to overcome these problems is to opt for the water-jet guided laser technology. In this technique the laser is conducted to the work piece by total internal reflection in a 'hair-thin' stable water-jet, comparable to an optical fiber. The water jet guided laser technique was developed originally in order to reduce the heat affected zone near the cut, but in fact the absence of beam divergence and the efficient melt xpulsion are also important advantages. In this presentation we will give an overview on today"s state of the art in dicing thin wafers, especially compound semiconductor wafers, using the water-jet guided laser technology.

  6. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    Science.gov (United States)

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  7. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  8. Photoelectrosynthesis at semiconductor electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  9. The Einstein relation in quantum wires of III-V, ternary, and quaternary materials in the presence of light waves: Simplified theory, relative comparison, and suggestion for experimental determination

    NARCIS (Netherlands)

    Ghatak, K.P.; Bhattacharya, S.; Bhowmik, S.; Benedictus, R.; Choudhury, S.

    2008-01-01

    We study the Einstein relation for the diffusivity to mobility ratio (DMR) in quantum wires (QWs) of III-V, ternary, and quaternary materials in the presence of light waves, whose unperturbed energy band structures are defined by the three band model of Kane. It has been found, taking n-InAs, n-InSb

  10. Unitary lens semiconductor device

    Science.gov (United States)

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  11. Defect-Rich Dopant-Free ZrO2 Nanostructures with Superior Dilute Ferromagnetic Semiconductor Properties.

    Science.gov (United States)

    Rahman, Md Anisur; Rout, S; Thomas, Joseph P; McGillivray, Donald; Leung, Kam Tong

    2016-09-14

    Control of the spin degree of freedom of an electron has brought about a new era in spin-based applications, particularly spin-based electronics, with the potential to outperform the traditional charge-based semiconductor technology for data storage and information processing. However, the realization of functional spin-based devices for information processing remains elusive due to several fundamental challenges such as the low Curie temperature of group III-V and II-VI semiconductors (model, which is generally applicable to other defect-rich, dopant-free transparent conductive oxide nanostructures. These results provide new insights into magnetic ordering in undoped dilute ferromagnetic semiconductor oxides and contribute to the design of exotic magnetic and novel multifunctional materials. PMID:27533277

  12. The ATLAS semiconductor tracker (SCT)

    CERN Document Server

    Jackson, J N

    2005-01-01

    The ATLAS detector (CERN/LHCC/94-43 (1994)) is designed to study a wide range of physics at the CERN Large Hadron Collider (LHC) at luminosities up to 10**3**4 cm**-**2 s**-**1 with a bunch-crossing rate of 40 MHz. The Semiconductor Tracker (SCT) forms a key component of the Inner Detector (vol. 1, ATLAS TDR 4, CERN/LHCC 97-16 (1997); vol. 2, ATLAS TDR 5, CERN/LHCC 97-17 (1997)) which is situated inside a 2 T solenoid field. The ATLAS Semiconductor Tracker (SCT) utilises 4088 silicon modules with binary readout mounted on carbon fibre composite structures arranged in the forms of barrels in the central region and discs in the forward region. The construction of the SCT is now well advanced. The design of the SCT modules, services and support structures will be briefly outlined. A description of the various stages in the construction process will be presented with examples of the performance achieved and the main difficulties encountered. Finally, the current status of the construction is reviewed.

  13. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  14. Eclipsing binaries in open clusters

    DEFF Research Database (Denmark)

    Southworth, John; Clausen, J.V.

    2006-01-01

    Stars: fundamental parameters - Stars : binaries : eclipsing - Stars: Binaries: spectroscopic - Open clusters and ass. : general Udgivelsesdato: 5 August......Stars: fundamental parameters - Stars : binaries : eclipsing - Stars: Binaries: spectroscopic - Open clusters and ass. : general Udgivelsesdato: 5 August...

  15. On the nature of ferromagnetism in dilute magnetic semiconductors: GaAs:Mn and GaP:Mn

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, V.A. E-mail: ivanov@uia.ua.ac.be; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K

    2003-03-01

    On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn{sup 2+} and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn.

  16. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  17. Semiconductor Solar Superabsorbers

    OpenAIRE

    Yiling Yu; Lujun Huang; Linyou Cao

    2014-01-01

    Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materia...

  18. Semiconductor bridge (SCB) detonator

    Science.gov (United States)

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  19. Low frequency noise sources and mechanisms in semiconductor nanowire transistors

    Science.gov (United States)

    Delker, Collin James

    Semiconductor nanowires are attractive candidates for use in future high-speed electronics, transparent/flexible devices, and chemical sensors. Among other materials, III-V semiconductors have gained considerable interest for their high bulk mobility and low band gap, making them promising for high-speed nanoscale devices. However, nanowire devices also exhibit high levels of low-frequency noise due to their low band gap and high surface-to-volume ratio. The sources and mechanisms of this noise must be understood and controlled in order to realize practical applications of nanowire electronics. This work seeks to understand the underlying noise mechanisms of nanowire transistors in order discover ways to reduce noise levels. It also demonstrates how noise can provide a spectroscopy for analyzing device quality. Most traditional noise studies tend to apply standard MOSFET models to nanowire noise and transport, which lump together all possible independent noise sources in a nanowire, ignoring effects of the contacts or multiple gates, and could lead to misestimation of the noise figures for a device. This work demonstrates how noise in a nanowire transistor can stem from the channel, ungated access regions, metal- semiconductor contacts, and tunnel barriers, all independently adding to the total noise. Each source of noise can contribute and may dominate the overall noise behavior under certain bias regimes and temperatures, as demonstrated in this work through various device structures and measurements. For example, the contacts can influence noise even below the threshold voltage under certain conditions, emphasizing the need for high-quality metal-semiconductor interface technology.

  20. Semiconductor/dielectric interface engineering and characterization

    Science.gov (United States)

    Lucero, Antonio T.

    The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

  1. Binary mask programmable hologram.

    Science.gov (United States)

    Tsang, P W M; Poon, T-C; Zhou, Changhe; Cheung, K W K

    2012-11-19

    We report, for the first time, the concept and generation of a novel Fresnel hologram called the digital binary mask programmable hologram (BMPH). A BMPH is comprised of a static, high resolution binary grating that is overlaid with a lower resolution binary mask. The reconstructed image of the BMPH can be programmed to approximate a target image (including both intensity and depth information) by configuring the pattern of the binary mask with a simple genetic algorithm (SGA). As the low resolution binary mask can be realized with less stringent display technology, our method enables the development of simple and economical holographic video display.

  2. Ways of providing radiation resistance of magnetic field semiconductor sensors

    CERN Document Server

    Bolshakova, I A; Holyaka, R; Matkovskii, A; Moroz, A

    2001-01-01

    Hall magnetic field sensors resistant to hard ionizing irradiation are being developed for operation under the radiation conditions of space and in charged particle accelerators. Radiation resistance of the sensors is first determined by the properties of semiconductor materials of sensitive elements; we have used microcrystals and thin layers of III-V semiconductors. Applying complex doping by rare-earth elements and isovalent impurities in certain proportions, we have obtained magnetic field sensors resistant to irradiation by fast neutrons and gamma-quanta. Tests of their radiation resistance were carried out at IBR-2 at the Joint Institute for Nuclear Research (Dubna). When exposed to neutrons with E=0.1-13 MeV and intensity of 10 sup 1 sup 0 n cm sup - sup 2 s sup - sup 1 , the main parameter of the sensors - their sensitivity to magnetic fields - changes by no more than 0.1% up to fluences of 10 sup 1 sup 4 n cm sup - sup 2. Further improvement of radiation resistance of sensor materials is expected by ...

  3. III-nitride semiconductors and their modern devices

    CERN Document Server

    2013-01-01

    This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

  4. PHOEBE: PHysics Of Eclipsing BinariEs

    Science.gov (United States)

    Prsa, Andrej; Matijevic, Gal; Latkovic, Olivera; Vilardell, Francesc; Wils, Patrick

    2011-06-01

    PHOEBE (PHysics Of Eclipsing BinariEs) is a modeling package for eclipsing binary stars, built on top of the widely used WD program (Wilson & Devinney 1971). This introductory paper overviews most important scientific extensions (incorporating observational spectra of eclipsing binaries into the solution-seeking process, extracting individual temperatures from observed color indices, main-sequence constraining and proper treatment of the reddening), numerical innovations (suggested improvements to WD's Differential Corrections method, the new Nelder & Mead's downhill Simplex method) and technical aspects (back-end scripter structure, graphical user interface). While PHOEBE retains 100% WD compatibility, its add-ons are a powerful way to enhance WD by encompassing even more physics and solution reliability.

  5. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  6. Spin injection into semiconductors

    Science.gov (United States)

    Oestreich, M.; Hübner, J.; Hägele, D.; Klar, P. J.; Heimbrodt, W.; Rühle, W. W.; Ashenford, D. E.; Lunn, B.

    1999-03-01

    The injection of spin-polarized electrons is presently one of the major challenges in semiconductor spin electronics. We propose and demonstrate a most efficient spin injection using diluted magnetic semiconductors as spin aligners. Time-resolved photoluminescence with a Cd0.98Mn0.02Te/CdTe structure proves the feasibility of the spin-alignment mechanism.

  7. Applications of Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    LI Te; SUN Yan-fang; NING Yong-qiang; WANG Li-jun

    2005-01-01

    An overview of the applications of semiconductor lasers is presented. Diode lasers are widely used today,and the most prevalent use of the laser is probably in CD and DVD drives for computers and audio/video media systems. Semiconductor lasers are also used in many other fields ranging from optical fiber communications to display,medicine and pumping sources.

  8. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  9. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  10. Binary coherent beam combining with semiconductor TA at 705

    OpenAIRE

    Icaza Astiz, Yannik Alan de

    2009-01-01

    Projecte realitzat en col.laboració amb L'IFCO We present a coherent-beam-combining (CBC) experiment using a 795 nm diode laser as a technique to achieve more power by combining two beams. Two Gaussian beams are made to interfere while controlling polarization, amplitude and their relative phase, in a modified Mach-Zehnder interferometer coupled with a polarization interferometer. The output power is locked using a split detector, thus stabilizing its performance and the fin...

  11. Electrochemical Characterization of Semiconductor Materials and Structures

    Science.gov (United States)

    1997-01-01

    For a period covering October 1, 1995 through August 12, 1996, the research group at CSU has conducted theoretical and experimental research on "Electrochemical Characterization of Semiconductor Materials and Structures. " The objective of this investigation was to demonstrate the applicability of electrochemical techniques for characterization of complex device structures based on InP and GaAs, Ge, InGaAs, InSb, InAs and InSb, including: (1) accurate EC-V net majority carrier concentration depth profiling, and (2) surface and bulk structural and electrical type defect densities. Our motivation for this R&D effort was as follows: "Advanced space solar cells and ThermoPhotoVoltaic (TPV) cells are fabricated using a large variety of III-V materials based on InP and GaAs for solar cells and low bandgap materials such as Ge, InGaAs, InAs and InSb for TPV applications. At the present time for complex device structures using these materials, however, there is no simple way to assess the quality of these structures prior to device fabrication. Therefore, process optimization is a very time consuming and a costly endeavor". Completion of this R&D effort would have had unquestionable benefits for space solar cell and TPV cells, since electrochemical characterization of the above cell structures, if properly designed can provide many useful structural and electrical material information virtually at any depth inside various layers and at the interfaces. This, could have been applied for step-by-step process optimization, which could have been used for fabrication of new generation high efficiency, low cost space PV and TPV cells.

  12. Interacting binary stars

    CERN Document Server

    Sahade, Jorge; Ter Haar, D

    1978-01-01

    Interacting Binary Stars deals with the development, ideas, and problems in the study of interacting binary stars. The book consolidates the information that is scattered over many publications and papers and gives an account of important discoveries with relevant historical background. Chapters are devoted to the presentation and discussion of the different facets of the field, such as historical account of the development in the field of study of binary stars; the Roche equipotential surfaces; methods and techniques in space astronomy; and enumeration of binary star systems that are studied

  13. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  14. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  15. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  16. Wide bandgap semiconductors. Fundamental properties and modern photonic and electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, K. [Nippon EMC Ltd. (Japan). R and D Center; Yoshikawa, A. [Chiba Univ. (Japan); Sandhu, A. (eds.) [Tokyo Institute of Technology (Japan)

    2007-07-01

    This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices. After review of the basic physics of WBGS and the relevance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the effect of defects on device performance are highlighted and solutions proposed based on recent studies. (orig.)

  17. Enhanced von Weizsäcker Wang-Govind-Carter kinetic energy density functional for semiconductors

    Science.gov (United States)

    Shin, Ilgyou; Carter, Emily A.

    2014-05-01

    We propose a new form of orbital-free (OF) kinetic energy density functional (KEDF) for semiconductors that is based on the Wang-Govind-Carter (WGC99) nonlocal KEDF. We enhance within the latter the semi-local von Weizsäcker KEDF term, which is exact for a single orbital. The enhancement factor we introduce is related to the extent to which the electron density is localized. The accuracy of the new KEDF is benchmarked against Kohn-Sham density functional theory (KSDFT) by comparing predicted energy differences between phases, equilibrium volumes, and bulk moduli for various semiconductors, along with metal-insulator phase transition pressures. We also compare point defect and (100) surface energies in silicon for a broad test of its applicability. This new KEDF accurately reproduces the exact non-interacting kinetic energy of KSDFT with only one additional adjustable parameter beyond the three parameters in the WGC99 KEDF; it exhibits good transferability between semiconducting to metallic silicon phases and between various III-V semiconductors without parameter adjustment. Overall, this KEDF is more accurate than previously proposed OF KEDFs (e.g., the Huang-Carter (HC) KEDF) for semiconductors, while the computational efficiency remains at the level of the WGC99 KEDF (several hundred times faster than the HC KEDF). This accurate, fast, and transferable new KEDF holds considerable promise for large-scale OFDFT simulations of metallic through semiconducting materials.

  18. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo

    2015-01-01

    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  19. Electrowetting on a semiconductor

    CERN Document Server

    Arscott, Steve

    2012-01-01

    We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The electrowetting is reversible - the voltage-dependent wetting contact angle variation of the mercury droplet is observed to depend on both the underlying semiconductor doping density and type. The electrowetting behaviour is explained by the voltage-dependent modulation of the space-charge capacitance at the metal-semiconductor junction - current-voltage and capacitance-voltage-frequency measurements indicate this to be the case. A model combining the metal-semiconductor junction capacitance and the Young-Lippmann electrowetting equation agrees well with the observations.

  20. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  1. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Vijay A Singh; Manoj K Harbola; Praveen Pathak

    2008-02-01

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  2. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  3. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  4. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Masaru, K.

    1984-04-20

    A semiconductor laser with enhanced characteristics is patented in which bleaching coatings are generated on the outcoupling mirrors by sputtering alternating coating layers made from A1203 and A10, with high and low indices of refraction.

  5. VECSEL Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    SHANXiao-nan; LUGuo-guang; HEChun-feng; SUNYan-fang; LITe; QINLi; NINGYong-qiang; WANGLi-jun

    2005-01-01

    Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking.

  6. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  7. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  8. Method of doping a semiconductor

    Science.gov (United States)

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  9. Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    "Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

  10. Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics

    Science.gov (United States)

    Scofield, A. C.; Hudson, A. I.; Liang, B. L.; Wells, N. P.; Huffaker, D. L.; Lotshaw, W. T.

    2016-05-01

    We use steady-state and time-resolved spectroscopy to evaluate optoelectronic material quality and obtain detailed information about carrier generation, transport, and relaxation in semiconductor devices and test structures. This report focuses on time-resolved and steady-state photoluminescence of III-V reference heterostructures at temperatures between 4K and 300K in order to investigate the mechanisms limiting carrier lifetime and to develop the capability to provide actionable feedback to research-and-development efforts for improvement and optimization of material properties and/or device performance. We combine the results of photoluminescence experiments with model-based analyses and simulations of carrier relaxation to assess the impacts of defects and interface quality on the relaxation dynamics of photo-generated carriers in double heterostructure test vehicles grown by MOCVD and MBE.

  11. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1−xGaxAs channel capping layer

    Directory of Open Access Journals (Sweden)

    Cheng-Hao Huang

    2015-06-01

    Full Text Available In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor devices with a channel capping layer. The impacts of thickness and gallium (Ga concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1−xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  12. Photoinduced superconductivity in semiconductors

    Science.gov (United States)

    Goldstein, Garry; Aron, Camille; Chamon, Claudio

    2015-02-01

    We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More realistically, we also show that superconductivity can be induced in a two-band semiconductor interacting with a broad-spectrum light source. We furthermore discuss the case of a three-band model in which the middle band replaces the broad-band reservoirs as the source of dissipation. In all three cases, we derive the simple conditions on the band structure, electron-electron interaction, and hybridization to the reservoirs that enable superconductivity. We compute the finite superconducting pairing and argue that the mechanism can be induced through both attractive and repulsive interactions and is robust to high temperatures.

  13. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  14. Binaries in globular clusters

    Science.gov (United States)

    Hut, Piet; Mcmillan, Steve; Goodman, Jeremy; Mateo, Mario; Phinney, E. S.; Pryor, Carlton; Richer, Harvey B.; Verbunt, Frank; Weinberg, Martin

    1992-01-01

    Recent observations have shown that globular clusters contain a substantial number of binaries most of which are believed to be primordial. We discuss different successful optical search techniques, based on radial-velocity variables, photometric variables, and the positions of stars in the color-magnitude diagram. In addition, we review searches in other wavelengths, which have turned up low-mass X-ray binaries and more recently a variety of radio pulsars. On the theoretical side, we give an overview of the different physical mechanisms through which individual binaries evolve. We discuss the various simulation techniques which recently have been employed to study the effects of a primordial binary population, and the fascinating interplay between stellar evolution and stellar dynamics which drives globular-cluster evolution.

  15. The binary proletariat

    OpenAIRE

    Bolt, Nate

    2000-01-01

    In the endless quest to transform itself, capitalism has spawned a new working class. The proletariat was an essential product of the industrial revolution, and the lighter, more efficient capitalism of the digital revolution has created the Binary Proletariat.

  16. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  17. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  18. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  19. XAFS applications in semiconductors

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    X-ray absorption fine structure (XAFS) has experienced a rapid development in the last three decades and has proven to be a powerful structural characterization technique nowadays. In this review, the XAFS basic principles including the theory, the data analysis, and the experiments have been introduced in detail. To show its strength as a local structure probe, the XAFS applications in semiconductors are summarized comprehensively, that is, thin films,quantum wells and dots, dilute magnetic semiconductors, and so on. In addition, certain new XAFS-related techniques,such as in-situ XAFS, micro-XAFS, and time-resolved XAFS are also shown.

  20. METAL-SEMICONDUCTOR JUNCTIONS

    OpenAIRE

    Flores, F.; Sánchez-Dehesa, J.; Guinea, F.

    1984-01-01

    In spite of many different models there seems to be a general lack of understanding about the mechanism of Schottky barrier formation. In order to elucidate this mechanism for covalent semiconductors, we present theoretical selfconsistent calculations for abrupt Si-Ag, C-Ag and Si-H-Ag junctions. Our results are in good agreement with the available experimental evidence, and show that the interface Fermi level is controlled by a density of states that appears in the semiconductor gap as a res...

  1. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  2. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  3. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  4. Semiconductor surface protection material

    Science.gov (United States)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  5. Eclipsing Binary Pulsars

    CERN Document Server

    Freire, P C C

    2004-01-01

    The first eclipsing binary pulsar, PSR B1957+20, was discovered in 1987. Since then, 13 other eclipsing low-mass binary pulsars have been found, 12 of these are in globular clusters. In this paper we list the known eclipsing binary pulsars and their properties, with special attention to the eclipsing systems in 47 Tuc. We find that there are two fundamentally different groups of eclipsing binary pulsars; separated by their companion masses. The less massive systems (M_c ~ 0.02 M_sun) are a product of predictable stellar evolution in binary pulsars. The systems with more massive companions (M_c ~ 0.2 M_sun) were formed by exchange encounters in globular clusters, and for that reason are exclusive to those environments. This class of systems can be used to learn about the neutron star recycling fraction in the globular clusters actively forming pulsars. We suggest that most of these binary systems are undetectable at radio wavelengths.

  6. A special section on semiconductors

    Institute of Scientific and Technical Information of China (English)

    Mingwang SHAO

    2011-01-01

    @@ Semiconductors are inherently endowed with excellent photoelectric properties.Semiconductor materials are the foundation of modern electronics and many other devices including transistors, solar cells, many kinds of diodes,and digital and analog integrated circuits.

  7. Stellar collisions during binary-binary and binary-single star interactions

    NARCIS (Netherlands)

    J.M. Fregeau; P. Cheung; S.F. Portegies Zwart; F.A. Rasio

    2004-01-01

    Physical collisions between stars occur frequently in dense star clusters, either via close encounters between two single stars, or during strong dynamical interactions involving binary stars. Here we study stellar collisions that occur during binary-single and binary-binary interactions, by perform

  8. Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

    Directory of Open Access Journals (Sweden)

    Faten A. Chaqmaqchee

    2016-04-01

    Full Text Available III-V semiconductors components such as Gallium Arsenic (GaAs, Indium Antimony (InSb, Aluminum Arsenic (AlAs and Indium Arsenic (InAs have high carrier mobilities and direct energy gaps. This is making them indispensable for today’s optoelectronic devices such as semiconductor lasers and optical amplifiers at 1.3 μm wavelength operation. In fact, these elements are led to the invention of the Gallium Indium Nitride Arsenic (GaInNAs, where the lattice is matched to GaAs for such applications. This article is aimed to design dilute nitride GaInNAs quantum wells (QWs enclosed between top and bottom of Aluminum (Gallium Arsenic Al(GaAs distributed bragg mirrors (DBRs using MATLAB® program. Vertical cavity semiconductor optical amplifiers (VCSOAs structures are based on Fabry Perot (FP method to design optical gain and bandwidth gain to be operated in reflection and transmission modes. The optical model gives access to the contact layer of epitaxial structure and the reflectivity for successive radiative modes, their lasing thresholds, emission wavelengths and optical field distributions in the laser cavity.

  9. Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

    CERN Document Server

    Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

    The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

  10. Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach—

    Directory of Open Access Journals (Sweden)

    Masao Takahashi

    2010-06-01

    Full Text Available The theoretical study of magnetic semiconductors using the dynamical coherent potential approximation (dynamical CPA is briefly reviewed. First, we give the results for ferromagnetic semiconductors (FMSs such as EuO and EuS by applying the dynamical CPA to the s-f model. Next, applying the dynamical CPA to a simple model for A1−xMnxB-type diluted magnetic semiconductors (DMSs, we show the results for three typical cases to clarify the nature and properties of the carrier states in DMSs. On the basis of this model, we discuss the difference in the optical band edges between II-V DMSs and III-V-based DMSs, and show that two types of ferromagnetism can occur in DMSs when carriers are introduced. The carrier-induced ferromagnetism of Ga1−xMnxAs is ascribed to a double-exchange (DE-like mechanism realized in the magnetic impurity band/or in the band tail.

  11. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  12. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  13. Magnetic impurities and materials design for semiconductor spintronics

    International Nuclear Information System (INIS)

    Curie temperatures (TC) of several diluted magnetic semiconductors are calculated from first-principles by using a mapping on a Heisenberg model in a mean field approximation. Very large TC's are obtained for V- or Cr-doped ZnSe and ZnTe and Cr-doped GaN, GaP and GaAs. Effects of additional carrier doping into (Ga, Mn)As and (Ga, Mn)N are investigated. TC of (Ga, Mn)N increases by hole doping, while (Ga, Mn)As is insensitive to hole doping. The origin of the ferromagnetism in Mn-doped III-V DMS is also discussed. It is found that if impurity bands are formed in the gap, as it is the case for (Ga, Mn)N, double exchange dominates leading to a characteristic √c dependence of TC as a function of the Mn concentration c. On the other hand, if the d-states are localized, as in (Ga, Mn)Sb, Zener's p-d exchange prevails resulting in a linear c-dependence of TC. (Ga, Mn)As is an intermediate case, showing a √c like behavior in the Local density approximation (LDA), but a nearly linear c-dependence, if the LDA+U method, with U=4 eV, is used

  14. Vacancies and defect levels in III–V semiconductors

    KAUST Repository

    Tahini, H. A.

    2013-08-13

    Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges ( −3≤q≤3 ) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt et al. [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to –1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions.

  15. On biomolecules and semiconductors: Analytical studies of interface dynamics

    Science.gov (United States)

    Slavin, John William Joseph

    The studies discussed here were undertaken to examine the use of III-V semiconducting materials as templates for biomolecules, to be applied in such technologies as Field-Effect Transistor (FET) and Light-emitting Diode (LED) biosensors. Materials application requires an informed analysis of interactions between chemical environments. Specific to surfaces, this means investigating the molecular interactions between the substrate and the bonding moieties. The analytical tools used to probe these interactions, and the changes that such communication causes on specific substrates are specifically discussed. Surface analysis tools included in this review are Atomic Force Microscopy (AFM), Nanoindentation, X-ray Photoelectron Spectroscopy (XPS), and Raman Microscopy. The interaction of biomolecules - deoxyribonucleic acid (DNA), proteins adhered to nanoparticles, and amino acids - on semiconductor surfaces is also examined. Proper investigation follows, as well, the methods of applying these biomolecular structures to the specified surfaces, through procedures such as solution phase transfer, as well as Dip-pen Nanolithography (DPN). The stretching and enzymatic cleavage of DNA, on silicon oxide surfaces, was studied to determine the recognition properties of dual-enzymatic systems on surfaces. Fundamental questions such as the interaction of functional groups with InAs(100) surfaces, the mechanical properties of protein modified systems, and the DPN application of biologically relevant linker molecules to InAs(100) surfaces were explored. These studies provide information applicable to the development of novel sensing platforms in the future.

  16. Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems

    Science.gov (United States)

    Fan, W. J.; Bose, Sumanta; Zhang, D. H.

    2016-09-01

    Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 μm optical communication systems. Incorporating dilute amounts of bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbit-splitting energy. Additional incorporation of dilute amounts of nitrogen (N) helps to attain lattice matching with GaAs, while providing a route for flexible bandgap tuning. Here we present a study of the electronic bandstructure and optical gain of the lattice matched GaNxBiy As1 -x -y /GaAs quaternary alloy quantum well (QW) based on the 16-band k .p model. We have taken into consideration the interactions between the N and Bi impurity states with the host material based on the band anticrossing and valence band anticrossing model. The optical gain calculation is based on the density matrix theory. We have considered different lattice matched GaNBiAs QW cases and studied their energy dispersion curves, optical gain spectrum, maximum optical gain, and differential gain and compared their performances based on these factors. The thickness and composition of these QWs were varied in order to keep the emission peak fixed at 1.55 μm. The well thickness has an effect on the spectral width of the gain curves. On the other hand, a variation in the injection carrier density has different effects on the maximum gain and differential gain of QWs of varying thicknesses. Among the cases studied, we found that the 6.3 nm thick GaN3 Bi5.17 As91.83 lattice matched QW was most suited for 1.55 μm (0.8 eV) GaAs-based photonic applications.

  17. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    Science.gov (United States)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  18. Multielectrode Semiconductor Lasers①②

    Institute of Scientific and Technical Information of China (English)

    LUHngchang; SUNHongxia; 等

    1997-01-01

    Multielectrode semiconductor lasers are studied via the ray method.The expression of the output photon number of N-electrode semiconductor lasers has been derived for the first time.When N=1 or 2,the expression of the output photon number fits in that of one-electrode(general)or two-electrode semiconductor lasers perfectly.

  19. Fundamentals of power semiconductor devices

    CERN Document Server

    Baliga, BJayant

    2010-01-01

    Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.

  20. EDITORIAL: Enhance your outlook with Compound Semiconductor

    Science.gov (United States)

    Bedrock, Claire

    2007-12-01

    An overwhelming proportion of the articles published in this journal come under the heading of applied research. In this field research findings impact tomorrow's products, and so it's important to keep tabs on these developments. Grant applications, for example, can carry extra weight when the potential benefits to industry are outlined alongside the gains to fundamental science. What's more, it's just plain interesting to track how key breakthroughs in understanding can drive improvements in commercial devices. Within our publication group we offer free resources that can help you keep pace with trends in part of this sector. Compound Semiconductor magazine and its associated website, compoundsemiconductor.net, cover III-V, III-N, SiC and SiGe research in academia and industry, alongside all the business news and key manufacturing technology. A high proportion of our authoritative and timely content is exclusive, and you can access it for free by completing a simple registration procedure at compoundsemiconductor.net. Three examples of feature articles published this year in Compound Semiconductor include: • Non-polar GaN reaches tipping point by Steven DenBaars, Shuji Nakamura and Jim Speck from the University of California, Santa Barbara. Although conventional GaN LEDs are a great commercial success, they suffer from an intrinsic weakness—internal electric fields that pull apart the electrons and holes and ultimately limit efficiency. However, this problem can be overcome by growing nitrides on alternate crystal planes. Although early attempts were unsuccessful, due to high defect densities in the epilayers, this is not the case with growth on the latest Mitsubishi substrates that can lead to external quantum efficiencies of 45%. In this article the authors describe the development of their non-polar material, and their promising results for LEDs and laser diodes. • Inverting the triple junction improves efficiency and flexibility by Paul Sharps and

  1. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear......In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... is determined by (but not equal to) the electron momentum relaxation rate. Single cycle pulses of light, irrespective of the frequency range to which they belong, inherently have an ultrabroadband spectrum covering many octaves of frequencies. Unlike the single-cycle pulses in optical domain, the THz pulses can...... be easily sampled with sub-cycle resolution using conventional femtosecond lasers. This makes the THz pulses accessible model tools for direct observation of general nonlinear optical phenomena occurring in the single-cycle regime....

  2. Biexcitons in semiconductor microcavities

    DEFF Research Database (Denmark)

    Borri, P.; Langbein, W.; Woggon, U.;

    2003-01-01

    In this paper, the present status of the experimental study of the optical properties of biexcitons in semiconductor microcavities is reviewed. In particular, a detailed investigation of a polariton-biexciton transition in a high-quality single quantum well GaAs/AlGaAs microcavity is reported...

  3. Skewed Binary Search Trees

    DEFF Research Database (Denmark)

    Brodal, Gerth Stølting; Moruz, Gabriel

    2006-01-01

    It is well-known that to minimize the number of comparisons a binary search tree should be perfectly balanced. Previous work has shown that a dominating factor over the running time for a search is the number of cache faults performed, and that an appropriate memory layout of a binary search tree...... can reduce the number of cache faults by several hundred percent. Motivated by the fact that during a search branching to the left or right at a node does not necessarily have the same cost, e.g. because of branch prediction schemes, we in this paper study the class of skewed binary search trees....... For all nodes in a skewed binary search tree the ratio between the size of the left subtree and the size of the tree is a fixed constant (a ratio of 1/2 gives perfect balanced trees). In this paper we present an experimental study of various memory layouts of static skewed binary search trees, where each...

  4. Binary Masking & Speech Intelligibility

    DEFF Research Database (Denmark)

    Boldt, Jesper

    The purpose of this thesis is to examine how binary masking can be used to increase intelligibility in situations where hearing impaired listeners have difficulties understanding what is being said. The major part of the experiments carried out in this thesis can be categorized as either experime...... mask using a directional system and a method for correcting errors in the target binary mask. The last part of the thesis, proposes a new method for objective evaluation of speech intelligibility.......The purpose of this thesis is to examine how binary masking can be used to increase intelligibility in situations where hearing impaired listeners have difficulties understanding what is being said. The major part of the experiments carried out in this thesis can be categorized as either...... experiments under ideal conditions or as experiments under more realistic conditions useful for real-life applications such as hearing aids. In the experiments under ideal conditions, the previously defined ideal binary mask is evaluated using hearing impaired listeners, and a novel binary mask -- the target...

  5. Binary Neutron Star Mergers

    Directory of Open Access Journals (Sweden)

    Joshua A. Faber

    2012-07-01

    Full Text Available We review the current status of studies of the coalescence of binary neutron star systems. We begin with a discussion of the formation channels of merging binaries and we discuss the most recent theoretical predictions for merger rates. Next, we turn to the quasi-equilibrium formalisms that are used to study binaries prior to the merger phase and to generate initial data for fully dynamical simulations. The quasi-equilibrium approximation has played a key role in developing our understanding of the physics of binary coalescence and, in particular, of the orbital instability processes that can drive binaries to merger at the end of their lifetimes. We then turn to the numerical techniques used in dynamical simulations, including relativistic formalisms, (magneto-hydrodynamics, gravitational-wave extraction techniques, and nuclear microphysics treatments. This is followed by a summary of the simulations performed across the field to date, including the most recent results from both fully relativistic and microphysically detailed simulations. Finally, we discuss the likely directions for the field as we transition from the first to the second generation of gravitational-wave interferometers and while supercomputers reach the petascale frontier.

  6. Binary Popldation Synthcsis Study

    Institute of Scientific and Technical Information of China (English)

    HAN Zhanwen

    2011-01-01

    Binary population synthesis (BPS), an approach to evolving millions of stars (including binaries) simultaneously, plays a crucial role in our understanding of stellar physics, the structure and evolution of galaxies, and cosmology. We proposed and developed a BPS approach, and used it to investigate the formation of many peculiar stars such as hot subdwarf stars, progenitors of type la supernovae, barium stars, CH stars, planetary nebulae, double white dwarfs, blue stragglers, contact binaries, etc. We also established an evolution population synthesis (EPS) model, the Yunnan Model, which takes into account binary interactions for the first time. We applied our model for the origin of hot subdwarf stars in the study of elliptical galaxies and explained their far-UV radiation.

  7. Binary and Millisecond Pulsars

    Directory of Open Access Journals (Sweden)

    Lorimer Duncan R.

    2008-11-01

    Full Text Available We review the main properties, demographics and applications of binary and millisecond radio pulsars. Our knowledge of these exciting objects has greatly increased in recent years, mainly due to successful surveys which have brought the known pulsar population to over 1800. There are now 83 binary and millisecond pulsars associated with the disk of our Galaxy, and a further 140 pulsars in 26 of the Galactic globular clusters. Recent highlights include the discovery of the young relativistic binary system PSR J1906+0746, a rejuvination in globular cluster pulsar research including growing numbers of pulsars with masses in excess of 1.5M_⊙, a precise measurement of relativistic spin precession in the double pulsar system and a Galactic millisecond pulsar in an eccentric (e = 0.44 orbit around an unevolved companion.

  8. Hypervelocity binary stars: smoking gun of massive binary black holes

    CERN Document Server

    Lu, Youjun; Lin, D N C

    2007-01-01

    The hypervelocity stars recently found in the Galactic halo are expelled from the Galactic center through interactions between binary stars and the central massive black hole or between single stars and a hypothetical massive binary black hole. In this paper, we demonstrate that binary stars can be ejected out of the Galactic center with velocities up to 10^3 km/s, while preserving their integrity, through interactions with a massive binary black hole. Binary stars are unlikely to attain such high velocities via scattering by a single massive black hole or through any other mechanisms. Based on the above theoretical prediction, we propose a search for binary systems among the hypervelocity stars. Discovery of hypervelocity binary stars, even one, is a definitive evidence of the existence of a massive binary black hole in the Galactic center.

  9. Milli-arcsecond Binaries

    CERN Document Server

    Torres, R M; Mioduszewki, A; Rodríguez, L F

    2008-01-01

    As part of an astrometric program, we have used the Very Long Baseline Array to measure the trigonometric parallax of several young stars in the Taurus and Ophiuchus star-forming regions with great accuracy. Additionally, we have obtained an unprecedented sample of high-resolution (~ 1 mas) images of several young stellar systems. These images revealed that about 70% of the stars in our sample are very tight binary stars (with separations of a few mas). Since it is highly unlikely that 70% of all stars are such tight binaries, we argue that selection effects are at work.

  10. Binary Cumulant Varieties

    CERN Document Server

    Sturmfels, Bernd

    2011-01-01

    Algebraic statistics for binary random variables is concerned with highly structured algebraic varieties in the space of 2x2x...x2-tensors. We demonstrate the advantages of representing such varieties in the coordinate system of binary cumulants. Our primary focus lies on hidden subset models. Parametrizations and implicit equations in cumulants are derived for hyperdeterminants, for secant and tangential varieties of Segre varieties, and for certain context-specific independence models. Extending work of Rota and collaborators, we explore the polynomial inequalities satisfied by cumulants.

  11. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  12. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  13. How semiconductor nanoplatelets form

    OpenAIRE

    Riedinger, Andreas; Ott, Florian D.; Mule, Aniket; Mazzotti, Sergio; Knuesel, Philippe N.; Kress, Stephan J. P.; Prins, Ferry; Erwin, Steven C.; Norris, David J.

    2016-01-01

    Colloidal nanoplatelets - quasi-two-dimensional sheets of semiconductor exhibiting efficient, spectrally pure fluorescence - form when liquid-phase syntheses of spherical quantum dots are modified. Despite intense interest in their properties, the mechanism behind their anisotropic shape and precise atomic-scale thickness remains unclear, and even counterintuitive when their crystal structure is isotropic. One commonly accepted explanation is that nanoclusters nucleate within molecular templa...

  14. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  15. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  16. Formation of binary radio pulsars

    International Nuclear Information System (INIS)

    In the framework of the standard scenario of the evolution of massive binary stars a study is made of the formation of final binary systems in which at least one of the components is a neutron star. It is found that about every fortieth radio pulsar must be a member of a close binary system. This is confirmed by observations. Radio pulsars are not formed in wide binary systems, possibly because of the very slow rotation of the presupernova stars

  17. Quantum Binary Symmetric Channels

    Institute of Scientific and Technical Information of China (English)

    陈小余; 仇佩亮

    2001-01-01

    Quantum binary symmetric channels are defined via the invariance of fidelity under unitary transformations ofthe input density operators. In this definition, they not only include the most studied case of the depolarizingchannel but also other channels. We investigate the character of the latter and find the maximum of the coherentinformation to estimate the capacities of the channels.

  18. Equational binary decision diagrams

    NARCIS (Netherlands)

    Groote, J.F.; Pol, J.C. van de

    2000-01-01

    We incorporate equations in binary decision diagrams (BDD). The resulting objects are called EQ-BDDs. A straightforward notion of ordered EQ-BDDs (EQ-OBDD) is defined, and it is proved that each EQ-BDD is logically equivalent to an EQ-OBDD. Moreover, on EQ-OBDDs satisfiability and tautology checkin

  19. The development of intelligent expert system with SAT for semiconductor

    International Nuclear Information System (INIS)

    In this study, the researches classifying the artificial flaws in semiconductor packages are performed using pattern recognition technology. For this purposes image pattern recognition package including the user made software was developed and total procedure including ultrasonic image acquisition, equalization filtering, binary processing, edge detection and classifier selection is treated by BP(backpropagation). Specially, it is compared IP(image processing) and SOM(self-organizing map) as preprocessing method for dimensionality reduction for entrance into multi-layer perceptron(backpropagation). Also, the pattern recognition techniques is applied to the classification problem of semiconductor flaws as crack, delamination. According to this results, it is possible to acquire the recognition rate of 83.4% about delamination, 75.7% about crack for SOM, and to acquire the recognition rate of 100% for BP.

  20. The development of intelligent expert system with SAT for semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae Yeol; Shim, Jae Gi; Jeong, Hyun Jo; Cho, Young Tae; Kim, Chang Hyun; Ko, Myung Soo [Chosun University, Gwangju (Korea, Republic of)

    2001-05-15

    In this study, the researches classifying the artificial flaws in semiconductor packages are performed using pattern recognition technology. For this purposes image pattern recognition package including the user made software was developed and total procedure including ultrasonic image acquisition, equalization filtering, binary processing, edge detection and classifier selection is treated by BP(backpropagation). Specially, it is compared IP(image processing) and SOM(self-organizing map) as preprocessing method for dimensionality reduction for entrance into multi-layer perceptron(backpropagation). Also, the pattern recognition techniques is applied to the classification problem of semiconductor flaws as crack, delamination. According to this results, it is possible to acquire the recognition rate of 83.4% about delamination, 75.7% about crack for SOM, and to acquire the recognition rate of 100% for BP.

  1. Semiconductor solar cells: Recent progress in terrestrial applications

    Science.gov (United States)

    Avrutin, V.; Izyumskaya, N.; Morkoç, H.

    2011-04-01

    In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In

  2. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  3. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang

    2005-01-01

    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  4. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  5. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  6. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  7. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  8. Semiconductor microcavity polaritons

    Energy Technology Data Exchange (ETDEWEB)

    Vinogradov, Evgenii A [Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow region (Russian Federation)

    2002-12-31

    The optical properties of wide-gap semiconductor films on metal substrates were investigated experimentally by infrared spectroscopy, Raman scattering, and femtosecond spectroscopy techniques as well as theoretically in the framework of linear crystal optics. The optical spectra of such planar structures (microresonators) were shown to bear information on electromagnetic excitations of both the surface and the volume of the structure. The optical spectra are determined by the interaction of all dipole-active excitations of the component materials with the electromagnetic modes of the microresonator, which in turn are determined by the permittivities of each component material, microcavity (microresonator) thickness, and the experimental conditions. (reviews of topical problems)

  9. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2001-12-21

    Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

  10. Coherent continuous-wave dual-frequency high-Q external-cavity semiconductor laser for GHz-THz applications.

    Science.gov (United States)

    Paquet, Romain; Blin, Stéphane; Myara, Mikhaël; Gratiet, Luc Le; Sellahi, Mohamed; Chomet, Baptiste; Beaudoin, Grégoire; Sagnes, Isabelle; Garnache, Arnaud

    2016-08-15

    We report a continuous-wave highly-coherent and tunable dual-frequency laser emitting at two frequencies separated by 30 GHz to 3 THz, based on compact III-V diode-pumped quantum-well surface-emitting semiconductor laser technology. The concept is based on the stable simultaneous operation of two Laguerre-Gauss transverse modes in a single-axis short cavity, using an integrated sub-wavelength-thick metallic mask. Simultaneous operation is demonstrated theoretically and experimentally by recording intensity noises and beat frequency, and time-resolved optical spectra. We demonstrated a >80  mW output power, diffraction-limited beam, narrow linewidth of 45  dB), and low intensity noise class-A dynamics of <0.3% rms, thus opening the path to a compact low-cost coherent GHz to THz source development. PMID:27519080

  11. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    Energy Technology Data Exchange (ETDEWEB)

    Cotoros, Ingrid A. [Univ. of California, Berkeley, CA (United States)

    2008-12-01

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  12. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    Energy Technology Data Exchange (ETDEWEB)

    Cotoros, Ingrid A.

    2008-12-12

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we"write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  13. Binary MEMS gas sensors

    International Nuclear Information System (INIS)

    A novel sensing mechanism for electrostatic MEMS that employs static bifurcation-based sensing and binary detection is demonstrated. It is implemented as an ethanol vapour sensor that exploits the static pull-in bifurcation. Sensor detection of 5 ppm of ethanol vapour in dry nitrogen, equivalent to a detectable mass of 165 pg, is experimentally demonstrated. Sensor robustness to external disturbances is also demonstrated. A closed-form expression for the sensitivity of statically detected electrostatic MEMS sensors is derived. It is shown that the sensitivity of static bifurcation-based binary electrostatic MEMS sensors represents an upper bound on the sensitivity of static detection for given sensor dimensions and material properties. (paper)

  14. FS CMa type binaries

    CERN Document Server

    Miroshnichenko, Anatoly

    2015-01-01

    FS CMa type stars is a group of ~70 objects formerly known as unclassified stars with the B[e] phenomenon. Their very strong emission-line spectra in combination with a nearly main-sequence luminosity suggest the binary nature for them. They possess strong IR excesses due to radiation of circumstellar dust that implies a compact distribution probably in a circumbinary disk. Our long-term spectroscopic monitoring revealed neutral metal lines, which always include that of Li I 6708 \\AA, in the spectra of some FS CMa objects indicating the presence of a cool star. We present a summary of our results with a first overview of FS CMa type binaries and review possible implications for the nature and evolutionary status of the entire group.

  15. Semiconductor Laser with Aperiodic Photonic Lattice

    OpenAIRE

    Subhasish Chakraborty

    2008-01-01

    A semiconductor laser and method for selecting laser frequency emission from the semiconductor laser are disclosed. The semiconductor laser provides selectable frequency emission and includes an aperiodic photonic lattice.

  16. Semiconductor devices incorporating multilayer interference regions

    Science.gov (United States)

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  17. Orientation-patterned II-VI semiconductor waveguides for quasi-phasematched nonlinear optics

    Science.gov (United States)

    Angell, Marilyn Joy

    1999-10-01

    The ability to grow epitaxial layers of II-VI compound semiconductors on GaAs substrates, the transparency of these materials to a broad range of visible wavelengths, and their strong second order susceptibility suggest that these materials should be promising for efficient nonlinear frequency conversion by on-chip integration with III-V pump lasers. This work investigates the use of semiconductor microfabrication techniques to create II-VI waveguides with laterally-patterned crystal orientation for quasi-phasematched second harmonic generation. The fabrication of periodically-patterned / CdTe on GaAs substrates, using epitaxial growth by metalorganic chemical vapor deposition and a lithographic patterning process, is demonstrated. This process is adapted to create ZnTe/ZnSe waveguides with periodic lateral patterning of the crystal orientation. The optical properties of planar waveguides with orientation-patterned ZnTe core layers are characterized. Second harmonic generation is measured, but does not appear to be quasi-phasematched at the test wavelength. High optical losses are observed in the patterned waveguides, and the mechanism of the loss is investigated using X-ray diffractometry, atomic force microscopy, and angle-resolved scatterometry. These measurements suggest that the losses are primarily due to bulk defects in the -oriented material. Waveguide patterning using -oriented anti-phase domains, which have a single axis of crystal growth, is recommended in order to overcome this problem.

  18. Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Anh, Le Duc, E-mail: anh@cryst.t.u-tokyo.ac.jp; Kaneko, Daiki; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2015-12-07

    We investigate the crystal structure, transport, and magnetic properties of Fe-doped ferromagnetic semiconductor (Al{sub 1−x},Fe{sub x})Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room temperature and insulating behavior at low temperature. The (Al{sub 1−x},Fe{sub x})Sb thin films with x ≤ 10% maintain the zinc blende crystal structure of the host material AlSb. The (Al{sub 1−x},Fe{sub x})Sb thin film with x = 10% shows intrinsic ferromagnetism with a Curie temperature (T{sub C}) of 40 K. In the (Al{sub 1−x},Fe{sub x})Sb thin film with x = 14%, a sudden drop of the hole mobility and T{sub C} was observed, which may be due to the microscopic phase separation. The observation of ferromagnetism in (Al,Fe)Sb paves the way to realize a spin-filtering tunnel barrier that is compatible with well-established III-V semiconductor devices.

  19. Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

    Energy Technology Data Exchange (ETDEWEB)

    Schnohr, C. S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

    2015-09-15

    Compound semiconductor alloys such as In{sub x}Ga{sub 1−x}As, GaAs{sub x}P{sub 1−x}, or CuIn{sub x}Ga{sub 1−x}Se{sub 2} are increasingly employed in numerous electronic, optoelectronic, and photonic devices due to the possibility of tuning their properties over a wide parameter range simply by adjusting the alloy composition. Interestingly, the material properties are also determined by the atomic-scale structure of the alloys on the subnanometer scale. These local atomic arrangements exhibit a striking deviation from the average crystallographic structure featuring different element-specific bond lengths, pronounced bond angle relaxation and severe atomic displacements. The latter, in particular, have a strong influence on the bandgap energy and give rise to a significant contribution to the experimentally observed bandgap bowing. This article therefore reviews experimental and theoretical studies of the atomic-scale structure of III-V and II-VI zincblende alloys and I-III-VI{sub 2} chalcopyrite alloys and explains the characteristic findings in terms of bond length and bond angle relaxation. Different approaches to describe and predict the bandgap bowing are presented and the correlation with local structural parameters is discussed in detail. The article further highlights both similarities and differences between the cubic zincblende alloys and the more complex chalcopyrite alloys and demonstrates that similar effects can also be expected for other tetrahedrally coordinated semiconductors of the adamantine structural family.

  20. Doping semiconductor nanocrystals.

    Science.gov (United States)

    Erwin, Steven C; Zu, Lijun; Haftel, Michael I; Efros, Alexander L; Kennedy, Thomas A; Norris, David J

    2005-07-01

    Doping--the intentional introduction of impurities into a material--is fundamental to controlling the properties of bulk semiconductors. This has stimulated similar efforts to dope semiconductor nanocrystals. Despite some successes, many of these efforts have failed, for reasons that remain unclear. For example, Mn can be incorporated into nanocrystals of CdS and ZnSe (refs 7-9), but not into CdSe (ref. 12)--despite comparable bulk solubilities of near 50 per cent. These difficulties, which have hindered development of new nanocrystalline materials, are often attributed to 'self-purification', an allegedly intrinsic mechanism whereby impurities are expelled. Here we show instead that the underlying mechanism that controls doping is the initial adsorption of impurities on the nanocrystal surface during growth. We find that adsorption--and therefore doping efficiency--is determined by three main factors: surface morphology, nanocrystal shape, and surfactants in the growth solution. Calculated Mn adsorption energies and equilibrium shapes for several nanocrystals lead to specific doping predictions. These are confirmed by measuring how the Mn concentration in ZnSe varies with nanocrystal size and shape. Finally, we use our predictions to incorporate Mn into previously undopable CdSe nanocrystals. This success establishes that earlier difficulties with doping are not intrinsic, and suggests that a variety of doped nanocrystals--for applications from solar cells to spintronics--can be anticipated. PMID:16001066

  1. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B

    2001-01-01

    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  2. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS) growt

  3. Semiconductor nanostructures in biological applications

    Energy Technology Data Exchange (ETDEWEB)

    Alexson, Dimitri [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Chen Hongfeng [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Cho, Michael [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Dutta, Mitra [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Li Yang [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Shi, Peng [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Raichura, Amit [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Ramadurai, Dinakar [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Parikh, Shaunak [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Stroscio, Michael A [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Vasudev, Milana [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States)

    2005-07-06

    Semiconductor nanostructures in biological applications are discussed. Results are presented on the use of colloidal semiconductor quantum dots both as biological tags and as structures that interact with and influence biomolecules. Results are presented on the use of semiconducting carbon nanotubes in biological applications. (topical review)

  4. Variable temperature semiconductor film deposition

    Science.gov (United States)

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  5. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  6. Binary-Signal Recovery

    Science.gov (United States)

    Griebeler, Elmer L.

    2011-01-01

    Binary communication through long cables, opto-isolators, isolating transformers, or repeaters can become distorted in characteristic ways. The usual solution is to slow the communication rate, change to a different method, or improve the communication media. It would help if the characteristic distortions could be accommodated at the receiving end to ease the communication problem. The distortions come from loss of the high-frequency content, which adds slopes to the transitions from ones to zeroes and zeroes to ones. This weakens the definition of the ones and zeroes in the time domain. The other major distortion is the reduction of low frequency, which causes the voltage that defines the ones or zeroes to drift out of recognizable range. This development describes a method for recovering a binary data stream from a signal that has been subjected to a loss of both higher-frequency content and low-frequency content that is essential to define the difference between ones and zeroes. The method makes use of the frequency structure of the waveform created by the data stream, and then enhances the characteristics related to the data to reconstruct the binary switching pattern. A major issue is simplicity. The approach taken here is to take the first derivative of the signal and then feed it to a hysteresis switch. This is equivalent in practice to using a non-resonant band pass filter feeding a Schmitt trigger. Obviously, the derivative signal needs to be offset to halfway between the thresholds of the hysteresis switch, and amplified so that the derivatives reliably exceed the thresholds. A transition from a zero to a one is the most substantial, fastest plus movement of voltage, and therefore will create the largest plus first derivative pulse. Since the quiet state of the derivative is sitting between the hysteresis thresholds, the plus pulse exceeds the plus threshold, switching the hysteresis switch plus, which re-establishes the data zero to one transition

  7. Massive Black Hole Binary Evolution

    Directory of Open Access Journals (Sweden)

    Merritt David

    2005-11-01

    Full Text Available Coalescence of binary supermassive black holes (SBHs would constitute the strongest sources of gravitational waves to be observed by LISA. While the formation of binary SBHs during galaxy mergers is almost inevitable, coalescence requires that the separation between binary components first drop by a few orders of magnitude, due presumably to interaction of the binary with stars and gas in a galactic nucleus. This article reviews the observational evidence for binary SBHs and discusses how they would evolve. No completely convincing case of a bound, binary SBH has yet been found, although a handful of systems (e.g. interacting galaxies; remnants of galaxy mergers are now believed to contain two SBHs at projected separations of <~ 1kpc. N-body studies of binary evolution in gas-free galaxies have reached large enough particle numbers to reproduce the slow, “diffusive” refilling of the binary’s loss cone that is believed to characterize binary evolution in real galactic nuclei. While some of the results of these simulations - e.g. the binary hardening rate and eccentricity evolution - are strongly N-dependent, others - e.g. the “damage” inflicted by the binary on the nucleus - are not. Luminous early-type galaxies often exhibit depleted cores with masses of ~ 1-2 times the mass of their nuclear SBHs, consistent with the predictions of the binary model. Studies of the interaction of massive binaries with gas are still in their infancy, although much progress is expected in the near future. Binary coalescence has a large influence on the spins of SBHs, even for mass ratios as extreme as 10:1, and evidence of spin-flips may have been observed.

  8. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  9. Binary optics: Trends and limitations

    Science.gov (United States)

    Farn, Michael W.; Veldkamp, Wilfrid B.

    1993-08-01

    We describe the current state of binary optics, addressing both the technology and the industry (i.e., marketplace). With respect to the technology, the two dominant aspects are optical design methods and fabrication capabilities, with the optical design problem being limited by human innovation in the search for new applications and the fabrication issue being limited by the availability of resources required to improve fabrication capabilities. With respect to the industry, the current marketplace does not favor binary optics as a separate product line and so we expect that companies whose primary purpose is the production of binary optics will not represent the bulk of binary optics production. Rather, binary optics' more natural role is as an enabling technology - a technology which will directly result in a competitive advantage in a company's other business areas - and so we expect that the majority of binary optics will be produced for internal use.

  10. Binaries in the Kuiper Belt

    CERN Document Server

    Noll, K S; Chiang, E I; Margot, J L; Kern, S D; Noll, Keith S.; Grundy, William M.; Chiang, Eugene I.; Margot, Jean-Luc; Kern, Susan D.

    2007-01-01

    Binaries have played a crucial role many times in the history of modern astronomy and are doing so again in the rapidly evolving exploration of the Kuiper Belt. The large fraction of transneptunian objects that are binary or multiple, 48 such systems are now known, has been an unanticipated windfall. Separations and relative magnitudes measured in discovery images give important information on the statistical properties of the binary population that can be related to competing models of binary formation. Orbits, derived for 13 systems, provide a determination of the system mass. Masses can be used to derive densities and albedos when an independent size measurement is available. Angular momenta and relative sizes of the majority of binaries are consistent with formation by dynamical capture. The small satellites of the largest transneptunian objects, in contrast, are more likely formed from collisions. Correlations of the fraction of binaries with different dynamical populations or with other physical variabl...

  11. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    Science.gov (United States)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

  12. Semiconductor nanowire lasers

    Science.gov (United States)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  13. Semiconductor Nanomaterials and Nanocrystals

    Directory of Open Access Journals (Sweden)

    N.V. Stetsyk

    2015-06-01

    Full Text Available This article introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This work also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important application.

  14. Semiconductor radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  15. A semiconductor based electrode

    Energy Technology Data Exchange (ETDEWEB)

    Khamatani, A.; Kobayasi, K.

    1983-03-30

    The semiconductor electrode is submerged into an electrolyte which is held in the illuminated chamber. The other electrode is placed in a dark chamber connected with the channel to be illuminated, which has a partition in the form of a membrane. An electric current flows in the external circuit of the element with illumination of the first electrode. The illuminated electrode is covered with a thin film of a substance which is stable with the action of the electrolyte. The film is made of Si02, A1203, GaN or A1N. The protective coating makes it possible to use materials less stable than Ti02 in a rutile modification, but which have higher characteristics than the GaP, GaAs, CdS and InP, for making the electrode.

  16. Modifying the emission of light from a semiconductor nanowire array

    Science.gov (United States)

    Anttu, Nicklas

    2016-07-01

    Semiconductor nanowire arrays have been identified as a promising platform for future light emitting diodes (LEDs), for example, due to the materials science freedom of combining lattice-mismatched materials in them. Furthermore, the emission of light from nanowires can be tailored by designing their geometry. Such tailoring could optimize the emission of light to the top side as well as enhance the emission rate through the Purcell effect. However, the possibility for enhanced light extraction from III-V nanowire arrays over a conventional bulk-like LED has not been investigated systematically. Here, we use electromagnetic modeling to study the emission of light from nanowire arrays. We vary both the diameter of the nanowires and the array period to show the benefit of moving from a bulk-like LED to a nanowire array LED. We study the fraction of light emitted to the top air side and to the substrate at wavelength λ. We find several diameter-dependent resonant peaks for which the emission to the top side is maximized. For the strongest such peak, by increasing the array period, the fraction of emitted light that is extracted at the top air side can be enhanced by a factor of 30 compared to that in a planar bulk LED. By modeling a single nanowire, we confirm that it is beneficial to place the nanowires further apart to enhance the emission to the top side. Furthermore, we predict that for a nanowire diameter D > λ/2, a majority of the emitted power ends up in the substrate. Our results offer direction for the design and optimization of nanowire-array based light emitting diodes.

  17. Biclustering Sparse Binary Genomic Data

    OpenAIRE

    Van Uitert, M.; Meuleman, W.; Wessels, L. F. A.

    2008-01-01

    Genomic datasets often consist of large, binary, sparse data matrices. In such a dataset, one is often interested in finding contiguous blocks that (mostly) contain ones. This is a biclustering problem, and while many algorithms have been proposed to deal with gene expression data, only two algorithms have been proposed that specifically deal with binary matrices. None of the gene expression biclustering algorithms can handle the large number of zeros in sparse binary matrices. The two propos...

  18. Sub-100nm pattern transfer on compound semiconductor using sol-gel-based TiO2 resist

    Science.gov (United States)

    Liu, Boyang; Ho, Seng-Tiong

    2009-02-01

    The possibility to pattern III-V compound semiconductor with nanometer scale is of great interest to photonic, electronic and optoelectronic systems. Typical method for sub-micrometer compound semiconductor dry etching utilizes PMMA or other resist to transfer patterns to SiO2 as intermediate masks due to resist's low etching selectivity, especially for ultra-small features. This additional pattern transfer will inevitably increase the potential damage caused by plasma dry etching and the complexity of patterning process. Therefore, it is desirable to find an easier and more effective way to pattern compound semiconductor. In this paper, we report a new approach of direct pattern transfer using Ti(OBun)4 solgel derived TiO2 resist as mask. The optimal dose of TiO2 resist for e-beam lithography is ~220mC/cm2. Thermal stability study of spin-coated TiO2 shows a good performance as lithography resist even at 300°C, which will have wider applications than conventional resists. Post-annealings at different temperatures are performed to study temperature-dependence of patterned TiO2 resist as dry-etching mask. The etching selectivity of sample InP compound semiconductor to TiO2 resist is over 7:1. A variety of sub-100 dry etching patterns with good profile qualities have been obtained. The aspect ratio of etching patterns is over 20:1, and the smallest feature is as small as 20nm with over 600nm deep. This sol-gel derived TiO2 sipn-coatable nanolithography resist with high etching selectivity and high aspect ratio etching profile provides a novel and convenient way to directly pattern compound semiconductor material for various challenging nano sacle photonic, electronic and optoelectronic applications.

  19. Rotational mixing in close binaries

    CERN Document Server

    de Mink, S E; Langer, N; Yoon, S -Ch; Brott, I; Glebbeek, E; Verkoulen, M; Pols, O R

    2008-01-01

    Rotational mixing is a very important but uncertain process in the evolution of massive stars. We propose to use close binaries to test its efficiency. Based on rotating single stellar models we predict nitrogen surface enhancements for tidally locked binaries. Furthermore we demonstrate the possibility of a new evolutionary scenario for very massive (M > 40 solar mass) close (P < 3 days) binaries: Case M, in which mixing is so efficient that the stars evolve quasi-chemically homogeneously, stay compact and avoid any Roche-lobe overflow, leading to very close (double) WR binaries.

  20. Evolution of Close Binary Systems

    Energy Technology Data Exchange (ETDEWEB)

    Yakut, K; Eggleton, P

    2005-01-24

    We collected data on the masses, radii, etc. of three classes of close binary stars: low-temperature contact binaries (LTCBs), near-contact binaries (NCBs), and detached close binaries (DCBs). They restrict themselves to systems where (1) both components are, at least arguably, near the Main Sequence, (2) the periods are less than a day, and (3) there is both spectroscopic and photometric analysis leading to reasonably reliable data. They discuss the possible evolutionary connections between these three classes, emphasizing the roles played by mass loss and angular momentum loss in rapidly-rotating cool stars.

  1. Low autocorrelation binary sequences

    Science.gov (United States)

    Packebusch, Tom; Mertens, Stephan

    2016-04-01

    Binary sequences with minimal autocorrelations have applications in communication engineering, mathematics and computer science. In statistical physics they appear as groundstates of the Bernasconi model. Finding these sequences is a notoriously hard problem, that so far can be solved only by exhaustive search. We review recent algorithms and present a new algorithm that finds optimal sequences of length N in time O(N {1.73}N). We computed all optimal sequences for N≤slant 66 and all optimal skewsymmetric sequences for N≤slant 119.

  2. Microlensing modulation by binaries

    CERN Document Server

    Dubath, F; Durrer, R; Dubath, Florian; Gasparini, Maria Alice; Durrer, Ruth

    2006-01-01

    We compute the effect of the lens quadrupole on microlensing. The time dependence of the quadrupole can lead to specific modulations of the amplification signal. We study especially binary system lenses in our galaxy. The modulation is observable if the rotation period of the system is smaller than the time over which the amplification is significant and if the impact parameter of the passing light ray is sufficiently close to the Einstein radius so that the amplification is very large. Observations of this modulation can reveal important information on the quadrupole and thus on the gravitational radiation emitted by the lens.

  3. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  4. Modeling Binary Neutron Stars

    Science.gov (United States)

    Park, Conner; Read, Jocelyn; Flynn, Eric; Lockett-Ruiz, Veronica

    2016-03-01

    Gravitational waves, predicted by Einstein's Theory of Relativity, are a new frontier in astronomical observation we can use to observe phenomena in the universe. Laser Interferometer Gravitational wave Observatory (LIGO) is currently searching for gravitational wave signals, and requires accurate predictions in order to best extract astronomical signals from all other sources of fluctuations. The focus of my research is in increasing the accuracy of Post-Newtonian models of binary neutron star coalescence to match the computationally expensive Numerical models. Numerical simulations can take months to compute a couple of milliseconds of signal whereas the Post-Newtonian can generate similar signals in seconds. However the Post-Newtonian model is an approximation, e.g. the Taylor T4 Post-Newtonian model assumes that the two bodies in the binary neutron star system are point charges. To increase the effectiveness of the approximation, I added in tidal effects, resonance frequencies, and a windowing function. Using these observed effects from simulations significantly increases the Post-Newtonian model's similarity to the Numerical signal.

  5. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  6. Signal processing for semiconductor detectors

    International Nuclear Information System (INIS)

    A balanced perspective is provided on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed

  7. Relativistic Binaries in Globular Clusters

    Directory of Open Access Journals (Sweden)

    Benacquista Matthew J.

    2006-02-01

    Full Text Available The galactic population of globular clusters are old, dense star systems, with a typical cluster containing 10^4 - 10^7 stars. As an old population of stars, globular clusters contain many collapsed and degenerate objects. As a dense population of stars, globular clusters are the scene of many interesting close dynamical interactions between stars. These dynamical interactions can alter the evolution of individual stars and can produce tight binary systems containing one or two compact objects. In this review, we discuss the theoretical models of globular cluster evolution and binary evolution, techniques for simulating this evolution which lead to relativistic binaries, and current and possible future observational evidence for this population. Globular cluster evolution will focus on the properties that boost the production of hard binary systems and on the tidal interactions of the galaxy with the cluster, which tend to alter the structure of the globular cluster with time. The interaction of the components of hard binary systems alters the evolution of both bodies and can lead to exotic objects. Direct N-body integrations and Fokker-Planck simulations of the evolution of globular clusters that incorporate tidal interactions and lead to predictions of relativistic binary populations are also discussed. We discuss the current observational evidence for cataclysmic variables, millisecond pulsars, and low-mass X-ray binaries as well as possible future detection of relativistic binaries with gravitational radiation.

  8. PERIODIC COMPLEMENTARY BINARY SEQUENCE PAIRS

    Institute of Scientific and Technical Information of China (English)

    XuChengqian; ZhaoXiaoqun

    2002-01-01

    A new set of binary sequences-Periodic Complementary Binary Sequence Pair (PCSP)is proposed .A new class of block design-Difference Family Pair (DFP)is also proposed .The relationship between PCSP and DFP,the properties and exising conditions of PCSP and the recursive constructions for PCSP are given.

  9. PERIODIC COMPLEMENTARY BINARY SEQUENCE PAIRS

    Institute of Scientific and Technical Information of China (English)

    Xu Chengqian; Zhao Xiaoqun

    2002-01-01

    A new set of binary sequences-Periodic Complementary Binary Sequence Pair (PCSP) is proposed. A new class of block design-Difference Family Pair (DFP) is also proposed.The relationship between PCSP and DFP, the properties and existing conditions of PCSP and the recursive constructions for PCSP are given.

  10. Relativistic Binaries in Globular Clusters

    Directory of Open Access Journals (Sweden)

    Matthew J. Benacquista

    2013-03-01

    Full Text Available Galactic globular clusters are old, dense star systems typically containing 10^4 – 10^6 stars. As an old population of stars, globular clusters contain many collapsed and degenerate objects. As a dense population of stars, globular clusters are the scene of many interesting close dynamical interactions between stars. These dynamical interactions can alter the evolution of individual stars and can produce tight binary systems containing one or two compact objects. In this review, we discuss theoretical models of globular cluster evolution and binary evolution, techniques for simulating this evolution that leads to relativistic binaries, and current and possible future observational evidence for this population. Our discussion of globular cluster evolution will focus on the processes that boost the production of tight binary systems and the subsequent interaction of these binaries that can alter the properties of both bodies and can lead to exotic objects. Direct N-body integrations and Fokker–Planck simulations of the evolution of globular clusters that incorporate tidal interactions and lead to predictions of relativistic binary populations are also discussed. We discuss the current observational evidence for cataclysmic variables, millisecond pulsars, and low-mass X-ray binaries as well as possible future detection of relativistic binaries with gravitational radiation.

  11. Simulation in Semiconductor Manufacturing Facilities

    OpenAIRE

    Arisha, Amr; Young, Paul

    2005-01-01

    Semiconductor manufacturing is one of the most complex industries in terms of technology and manufacturing procedure. The life cycle of a semiconductor facility (FAB) has many phases, in their life cycle including capacity planning, new products introduction, variation of products/technologies, and decline phase. The complexity of the manufacturing and the external forces from markets and technology growth make predicting the effects of changes in the manufacturing system problematic. Simulat...

  12. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  13. Statistical Methods for Semiconductor Manufacturing

    OpenAIRE

    Susto, Gian Antonio

    2013-01-01

    In this thesis techniques for non-parametric modeling, machine learning, filtering and prediction and run-to-run control for semiconductor manufacturing are described. In particular, algorithms have been developed for two major applications area: - Virtual Metrology (VM) systems; - Predictive Maintenance (PdM) systems. Both technologies have proliferated in the past recent years in the semiconductor industries, called fabs, in order to increment productivity and decrease costs. ...

  14. Quantum transport in semiconductor nanowires

    OpenAIRE

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS) growth. The huge versatility of this material system (e.g. in size and materials) results in a wide range of potential applications in (opto-)electronics. During the last few years many important proofs...

  15. Medical applications of semiconductor lasers

    Science.gov (United States)

    Mancha, Sylvia D.; Keipert, Andreas; Prairie, Michael W.

    1994-06-01

    The High Power Semiconductor Laser Technology (HPSLT) program is currently developing, in-house, a belt pack medical laser. This compact semiconductor laser device provides the field paramedic or physician a unique portable laser capability. The pack consists of a completely self-contained laser system that fits inside a belt pack. Several other medical applications being investigated by the HPSLT program include urological applications, photodynamic therapy, and ophthalmic applications.

  16. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  17. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.

    1984-03-27

    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  18. Semiconductor packaging materials interaction and reliability

    CERN Document Server

    Chen, Andrea

    2012-01-01

    In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. The book focuses on an important step in semiconductor manufacturing--package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how

  19. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  20. The ATLAS Semiconductor tracker: operations and performance

    CERN Document Server

    Pani, P; The ATLAS collaboration

    2013-01-01

    Tracker After more than 3 years of successful operation at the LHC, we report on the operation and performance of the Semi-Conductor Tracker (SCT) functioning in a high luminosity, high radiation environment. The SCT is part of the ATLAS experiment at CERN and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals are processed in the front-end ABCD3TA ASICs, which use a binary readout architecture. Data is transferred to the off-detector readout electronics via optical fibers. We find 99.3% of the SCT modules are operational, noise occupancy and hit efficiency exceed the design specifications; the alignment is very cl...

  1. The ATLAS semiconductor tracker: operations and performance

    CERN Document Server

    D'Auria, S; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar {it p}-in-{it n} technology. The signals are processed in the front-end ASICS ABCD3TA, working in binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. We find 99.3% of the SCT modules are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current results from the successful operation of the SCT Detector at the LHC and its status af...

  2. Signature Visualization of Software Binaries

    Energy Technology Data Exchange (ETDEWEB)

    Panas, T

    2008-07-01

    In this paper we present work on the visualization of software binaries. In particular, we utilize ROSE, an open source compiler infrastructure, to pre-process software binaries, and we apply a landscape metaphor to visualize the signature of each binary (malware). We define the signature of a binary as a metric-based layout of the functions contained in the binary. In our initial experiment, we visualize the signatures of a series of computer worms that all originate from the same line. These visualizations are useful for a number of reasons. First, the images reveal how the archetype has evolved over a series of versions of one worm. Second, one can see the distinct changes between version. This allows the viewer to form conclusions about the development cycle of a particular worm.

  3. Planets in evolved binary systems

    CERN Document Server

    Perets, Hagai B

    2010-01-01

    Exoplanets are typically thought to form in protoplanetary disks left over from protostellar disk of their newly formed host star. However, additional planetary formation and evolution routes may exist in old evolved binary systems. Here we discuss the implications of binary stellar evolution on planetary systems. In these binary systems stellar evolution could lead to the formation of symbiotic stars, where mass is lost from one star and could be transferred to its binary companion, and may form an accretion disk around it. This raises the possibility that such a disk could provide the necessary environment for the formation of a new, second generation of planets in both circumstellar or circumbinary configurations. Pre-existing first generation planets surviving the post-MS evolution of such systems would be dynamically effected by the mass loss in the systems and may also interact with the newly formed disk. Second generation planetary systems should be typically found in white dwarf binary systems, and ma...

  4. Pairing mechanisms for binary stars

    CERN Document Server

    Kouwenhoven, M B N; Goodwin, S P; Zwart, S F Portegies; Kaper, L; 10.1002/asna.200811061

    2008-01-01

    Knowledge of the binary population in stellar groupings provides important information about the outcome of the star forming process in different environments. Binarity is also a key ingredient in stellar population studies and is a prerequisite to calibrate the binary evolution channels. In these proceedings we present an overview of several commonly used methods to pair individual stars into binary systems, which we refer to as the pairing function. Many pairing functions are frequently used by observers and computational astronomers, either for the mathematical convenience, or because they roughly describe the expected outcome of the star forming process. We discuss the consequences of each pairing function for the interpretation of observations and numerical simulations. The binary fraction and mass ratio distribution generally depend strongly on the selection of the range in primary spectral type in a sample. These quantities, when derived from a binary survey with a mass-limited sample of target stars, ...

  5. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  6. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Khiroiti, S.

    1984-05-20

    An improved method is patented for increasing the service life of semiconductor lasers which does not hinder their characteristics, by applying a protective film to the end planes of the optical resonator of the laser. It is recommended that a mixture of an A1203 dielectric and an inert element such as argon be used for a GaAs, GaA1As laser as the protective film. The radii of gallium and arsenic atoms are equal to 1.24 and 1.25 angstroms, respectively. The radii of A1, O and Si atoms which make up the protective film are equal to 1.43, .61 and 1.17 angstroms, respectively. The radius of the argon atoms in the protective film, which is equal to 1.91 angstroms) is high compared to the atoms noted above. As a result, the movement of the gallium and arsenic atoms, which causes a drop in later characteristics during operation, is made more difficult.

  7. Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

    Energy Technology Data Exchange (ETDEWEB)

    Vais, Abhitosh, E-mail: Abhitosh.Vais@imec.be; Martens, Koen; DeMeyer, Kristin [Department of Electrical Engineering, KU Leuven, B-3000 Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, Han-Chung; Ivanov, Tsvetan; Collaert, Nadine; Thean, Aaron [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Dou, Chunmeng [Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Xie, Qi; Maes, Jan [ASM International, B-3001 Leuven (Belgium); Tang, Fu; Givens, Michael [ASM International, Phoenix, Arizona 85034-7200 (United States); Raskin, Jean-Pierre [Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universiteé Catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)

    2015-08-03

    This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

  8. Towards Physarum Binary Adders

    CERN Document Server

    Jones, Jeff; 10.1016/j.biosystems.2010.04.005

    2010-01-01

    Plasmodium of \\emph{Physarum polycephalum} is a single cell visible by unaided eye. The plasmodium's foraging behaviour is interpreted in terms of computation. Input data is a configuration of nutrients, result of computation is a network of plasmodium's cytoplasmic tubes spanning sources of nutrients. Tsuda et al (2004) experimentally demonstrated that basic logical gates can be implemented in foraging behaviour of the plasmodium. We simplify the original designs of the gates and show --- in computer models --- that the plasmodium is capable for computation of two-input two-output gate $ \\to $ and three-input two-output $ \\to $. We assemble the gates in a binary one-bit adder and demonstrate validity of the design using computer simulation.

  9. Spatial light modulation in compound semiconductor materials

    Science.gov (United States)

    Cheng, Li-Jen (Inventor); Gheen, Gregory O. (Inventor); Partovi, Afshin (Inventor)

    1990-01-01

    Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

  10. Wide-Bandgap Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  11. Defect identification in semiconductors with positron annihilation: experiment and theory

    Science.gov (United States)

    Tuomisto, Filip

    2015-03-01

    Positron annihilation spectroscopy is a very powerful technique for the detection, identification and quantification of vacancy-type defects in semiconductors. In the past decades, it has been used to reveal the relationship between opto-electronic properties and specific defects in a wide variety of materials - examples include parasitic yellow luminescence in GaN, dominant acceptor defects in ZnO and broad-band absorption causing brown coloration in natural diamond. In typical binary compound semiconductors, the selective sensitivity of the technique is rather strongly limited to cation vacancies that possess significant open volume and suitable charge (negative of neutral). On the other hand, oxygen vacancies in oxide semiconductors are a widely debated topic. The properties attributed to oxygen vacancies include the inherent n-type conduction, poor p-type dopability, coloration (absorption), deep level luminescence and non-radiative recombination, while the only direct experimental evidence of their existence has been obtained on the crystal surface. We will present recent advances in combining state-of-the-art positron annihilation experiments and ab initio computational approaches. The latter can be used to model both the positron lifetime and the electron-positron momentum distribution - quantities that can be directly compared with experimental results. We have applied these methods to study vacancy-type defects in III-nitride semiconductors (GaN, AlN, InN) and oxides such as ZnO, SnO2, In2O3andGa2O3. We will show that cation-vacancy-related defects are important compensating centers in all these materials when they are n-type. In addition, we will show that anion (N, O) vacancies can be detected when they appear as complexes with cation vacancies.

  12. Defect-Rich Dopant-Free ZrO2 Nanostructures with Superior Dilute Ferromagnetic Semiconductor Properties.

    Science.gov (United States)

    Rahman, Md Anisur; Rout, S; Thomas, Joseph P; McGillivray, Donald; Leung, Kam Tong

    2016-09-14

    Control of the spin degree of freedom of an electron has brought about a new era in spin-based applications, particularly spin-based electronics, with the potential to outperform the traditional charge-based semiconductor technology for data storage and information processing. However, the realization of functional spin-based devices for information processing remains elusive due to several fundamental challenges such as the low Curie temperature of group III-V and II-VI semiconductors (semiconductors in a multilayer device structure, which are caused by precipitation and migration of dopants from the host layer to the adjacent layers. Here, we use catalyst-assisted pulsed laser deposition to grow, for the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures with high TC (700 K) and high magnetization (5.9 emu/g). The observed magnetization is significantly greater than both doped and defect-rich transparent conductive oxide nanomaterials reported to date. We also provide the first experimental evidence that it is the amounts and types of oxygen vacancy defects in, and not the phase of ZrO2 that control the ferromagnetic order in undoped ZrO2 nanostructures. To explain the origin of ferromagnetism in these ZrO2 nanostructures, we hypothesize a new defect-induced bound polaron model, which is generally applicable to other defect-rich, dopant-free transparent conductive oxide nanostructures. These results provide new insights into magnetic ordering in undoped dilute ferromagnetic semiconductor oxides and contribute to the design of exotic magnetic and novel multifunctional materials.

  13. Stability of binaries. Part II: Rubble-pile binaries

    Science.gov (United States)

    Sharma, Ishan

    2016-10-01

    We consider the stability of the binary asteroids whose members are granular aggregates held together by self-gravity alone. A binary is said to be stable whenever both its members are orbitally and structurally stable to both orbital and structural perturbations. To this end, we extend the stability analysis of Sharma (Sharma [2015] Icarus, 258, 438-453), that is applicable to binaries with rigid members, to the case of binary systems with rubble members. We employ volume averaging (Sharma et al. [2009] Icarus, 200, 304-322), which was inspired by past work on elastic/fluid, rotating and gravitating ellipsoids. This technique has shown promise when applied to rubble-pile ellipsoids, but requires further work to settle some of its underlying assumptions. The stability test is finally applied to some suspected binary systems, viz., 216 Kleopatra, 624 Hektor and 90 Antiope. We also see that equilibrated binaries that are close to mobilizing their maximum friction can sustain only a narrow range of shapes and, generally, congruent shapes are preferred.

  14. Closing photoconductive semiconductor switches

    Energy Technology Data Exchange (ETDEWEB)

    Loubriel, G.M.; Zutavern, F.J.; Hjalmarson, H.P.; O' Malley, M.W.

    1989-01-01

    One of the most important limitations of Photoconductive Semiconductor Switches (PCSS) for pulsed power applications is the high laser powers required to activate the switches. In this paper, we discuss recent developments on two different aspects of GaAs PCSS that result in reductions in laser power by a factor of nearly 1000. The advantages of using GaAs over Si are many. First of all, the resistivity of GaAs can be orders of magnitude higher than that of the highest resistivity Si material, thus allowing GaAs switches to withstand dc voltages without thermal runaway. Secondly, GaAs has a higher carrier mobility than Si and, thus, is more efficient (per carrier). Finally, GaAs switches can have naturally fast (ns) opening times at room temperature and low fields, microsecond opening times at liquid nitrogen temperature of 77 K, or, on demand, closing and opening at high fields and room temperature by a mechanism called lock-on (see Ref. 1). By contrast, Si switches typically opening times of milliseconds. The amount of laser light required to trigger GaAs for lock-on, or at 77 K, is about three orders of magnitude lower than at room temperature. In this paper we describe the study of lock-on in GaAs and InP, as well as switching of GaAs at 77 K. We shall show that when GaAs is switched at 77 K, the carrier lifetime is about three orders of magnitude longer than it is at room temperature. We shall explain the change in lifetime in terms of the change in electron capture cross section of the deep levels in GaAs (these are defect or impurity levels in the band gap). In the second section, we describe the lock-on effect, now seen in GaAs and InP, and at fields as high as 70 kV/cm. We show how lock-on can be tailored by changing the GaAs temperature or by neutron bombardment. In the third section, we discuss possible lock-on mechanisms. 5 refs., 5 figs.

  15. Simulating relativistic binaries with Whisky

    Science.gov (United States)

    Baiotti, L.

    We report about our first tests and results in simulating the last phase of the coalescence and the merger of binary relativistic stars. The simulations were performed using our code Whisky and mesh refinement through the Carpet driver.

  16. Binary nucleation beyond capillarity approximation

    NARCIS (Netherlands)

    Kalikmanov, V.I.

    2010-01-01

    Large discrepancies between binary classical nucleation theory (BCNT) and experiments result from adsorption effects and inability of BCNT, based on the phenomenological capillarity approximation, to treat small clusters. We propose a model aimed at eliminating both of these deficiencies. Adsorption

  17. Magnetic braking in ultracompact binaries

    CERN Document Server

    Farmer, Alison

    2010-01-01

    Angular momentum loss in ultracompact binaries, such as the AM Canum Venaticorum stars, is usually assumed to be due entirely to gravitational radiation. Motivated by the outflows observed in ultracompact binaries, we investigate whether magnetically coupled winds could in fact lead to substantial additional angular momentum losses. We remark that the scaling relations often invoked for the relative importance of gravitational and magnetic braking do not apply, and instead use simple non-empirical expressions for the braking rates. In order to remove significant angular momentum, the wind must be tied to field lines anchored in one of the binary's component stars; uncertainties remain as to the driving mechanism for such a wind. In the case of white dwarf accretors, we find that magnetic braking can potentially remove angular momentum on comparable or even shorter timescales than gravitational waves over a large range in orbital period. We present such a solution for the 17-minute binary AM CVn itself which a...

  18. Discs in misaligned binary systems

    CERN Document Server

    Rawiraswattana, Krisada; Goodwin, Simon P

    2016-01-01

    We perform SPH simulations to study precession and changes in alignment between the circumprimary disc and the binary orbit in misaligned binary systems. We find that the precession process can be described by the rigid-disc approximation, where the disc is considered as a rigid body interacting with the binary companion only gravitationally. Precession also causes change in alignment between the rotational axis of the disc and the spin axis of the primary star. This type of alignment is of great important for explaining the origin of spin-orbit misaligned planetary systems. However, we find that the rigid-disc approximation fails to describe changes in alignment between the disc and the binary orbit. This is because the alignment process is a consequence of interactions that involve the fluidity of the disc, such as the tidal interaction and the encounter interaction. Furthermore, simulation results show that there are not only alignment processes, which bring the components towards alignment, but also anti-...

  19. Cryptography with DNA binary strands.

    Science.gov (United States)

    Leier, A; Richter, C; Banzhaf, W; Rauhe, H

    2000-06-01

    Biotechnological methods can be used for cryptography. Here two different cryptographic approaches based on DNA binary strands are shown. The first approach shows how DNA binary strands can be used for steganography, a technique of encryption by information hiding, to provide rapid encryption and decryption. It is shown that DNA steganography based on DNA binary strands is secure under the assumption that an interceptor has the same technological capabilities as sender and receiver of encrypted messages. The second approach shown here is based on steganography and a method of graphical subtraction of binary gel-images. It can be used to constitute a molecular checksum and can be combined with the first approach to support encryption. DNA cryptography might become of practical relevance in the context of labelling organic and inorganic materials with DNA 'barcodes'.

  20. AN IMPROVED DESIGN OF REVERSIBLE BINARY TO BINARY CODED DECIMAL CONVERTER FOR BINARY CODED DECIMAL MULTIPLICATION

    Directory of Open Access Journals (Sweden)

    Praveena Murugesan

    2014-01-01

    Full Text Available Reversible logic gates under ideal conditions produce zero power dissipation. This factor highlights the usage of these gates in optical computing, low power CMOS design, quantum optics and quantum computing. The growth of decimal arithmetic in various applications as stressed the need to propose the study on reversible binary to BCD converter which plays a greater role in decimal multiplication for providing faster results. The different parameters such as gate count,garbage output and constant input are more optimized in the proposed fixed bit binary to binary coded decimal converter than the existing design.

  1. Transient Black Hole Binaries

    CERN Document Server

    Belloni, T M

    2016-01-01

    The last two decades have seen a great improvement in our understand- ing of the complex phenomenology observed in transient black-hole binary systems, especially thanks to the activity of the Rossi X-Ray Timing Explorer satellite, com- plemented by observations from many other X-ray observatories and ground-based radio, optical and infrared facilities. Accretion alone cannot describe accurately the intricate behavior associated with black-hole transients and it is now clear that the role played by different kinds of (often massive) outflows seen at different phases of the outburst evolution of these systems is as fundamental as the one played by the accretion process itself. The spectral-timing states originally identified in the X-rays and fundamentally based on the observed effect of accretion, have acquired new importance as they now allow to describe within a coherent picture the phenomenology observed at other wave- length, where the effects of ejection processes are most evident. With a particular focu...

  2. Selenium semiconductor core optical fibers

    Directory of Open Access Journals (Sweden)

    G. W. Tang

    2015-02-01

    Full Text Available Phosphate glass-clad optical fibers containing selenium (Se semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  3. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-12-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V-1 s-1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m-2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  4. Organic Semiconductors and its Applications

    Science.gov (United States)

    Kamalasanan, M. N.

    2011-10-01

    Organic semiconductors in the form of evaporated or spin coated thin films have many optoelectronic applications in the present electronic industry. They are frequently used in many type of displays, photo detectors, photoconductors for photocopiers and photovoltaic cells. But many p-conjugated molecules and polymer based devices do not provide satisfactory device performance and operational stability. Most of these problems are related to the interfaces they make with other organic materials and electrodes and the low conductivity of the organic layers. The study of organic-metal and organic—organic interfaces as well as electrical doping of organic semiconductors are very important areas of research at present. In this talk, I will be discussing some of the recent advances in this field as well as some of our own results in the area of interface modification and electrical doping of organic semiconductors.

  5. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  6. Binary nucleation beyond capillarity approximation

    OpenAIRE

    Kalikmanov, V.I.

    2010-01-01

    Large discrepancies between binary classical nucleation theory (BCNT) and experiments result from adsorption effects and inability of BCNT, based on the phenomenological capillarity approximation, to treat small clusters. We propose a model aimed at eliminating both of these deficiencies. Adsorption is taken into account within Gibbsian approximation. Binary clusters are treated by means of statistical-mechanical considerations: tracing out the molecular degrees of freedom of the more volatil...

  7. Clostridium difficile binary toxin CDT

    OpenAIRE

    Gerding, Dale N.; Johnson, Stuart; Rupnik, Maja; Aktories, Klaus

    2013-01-01

    Binary toxin (CDT) is frequently observed in Clostridium difficile strains associated with increased severity of C. difficile infection (CDI). CDT belongs to the family of binary ADP-ribosylating toxins consisting of two separate toxin components: CDTa, the enzymatic ADP-ribosyltransferase which modifies actin, and CDTb which binds to host cells and translocates CDTa into the cytosol. CDTb is activated by serine proteases and binds to lipolysis stimulated lipoprotein receptor. ADP-ribosylatio...

  8. Coalescence of Binary Neutron Stars

    OpenAIRE

    Oohara, Ken-ichi; Namamura, Takashi

    1996-01-01

    The most important sources for laser-interferometric gravitational-wave detectors like LIGO or VIRGO are catastrophic events such as coalescence of a neutron-star binary. The final phase, or the last three milliseconds, of coalescence is considered. We describe results of numerical simulations of coalescing binary neutron stars using Newtonian and post-Newtonian hydrodynamics code and then discuss recent development of our 3D GR code.

  9. Coevolution of Binaries and Gaseous Discs

    CERN Document Server

    Fleming, David P

    2016-01-01

    The recent discoveries of circumbinary planets by $\\it Kepler$ raise questions for contemporary planet formation models. Understanding how these planets form requires characterizing their formation environment, the circumbinary protoplanetary disc, and how the disc and binary interact and change as a result. The central binary excites resonances in the surrounding protoplanetary disc that drive evolution in both the binary orbital elements and in the disc. To probe how these interactions impact binary eccentricity and disc structure evolution, N-body smooth particle hydrodynamics (SPH) simulations of gaseous protoplanetary discs surrounding binaries based on Kepler 38 were run for $10^4$ binary periods for several initial binary eccentricities. We find that nearly circular binaries weakly couple to the disc via a parametric instability and excite disc eccentricity growth. Eccentric binaries strongly couple to the disc causing eccentricity growth for both the disc and binary. Discs around sufficiently eccentri...

  10. Exciton Transport in Organic Semiconductors

    Science.gov (United States)

    Menke, Stephen Matthew

    Photovoltaic cells based on organic semiconductors are attractive for their use as a renewable energy source owing to their abundant feedstock and compatibility with low-cost coating techniques on flexible substrates. In contrast to photovoltaic cells based traditional inorganic semiconductors, photon absorption in an organic semiconductor results in the formation of a coulombically bound electron-hole pair, or exciton. The transport of excitons, consequently, is of critical importance as excitons mediate the interaction between charge and light in organic photovoltaic cells (OPVs). In this dissertation, a strong connection between the fundamental photophysical parameters that control nanoscopic exciton energy transfer and the mesoscopic exciton transport is established. With this connection in place, strategies for enhancing the typically short length scale for exciton diffusion (L D) can be developed. Dilution of the organic semiconductor boron subphthalocyanine chloride (SubPc) is found to increase the LD for SubPc by 50%. In turn, OPVs based on dilute layers of SubPc exhibit a 30% enhancement in power conversion efficiency. The enhancement in power conversion efficiency is realized via enhancements in LD, optimized optical spacing, and directed exciton transport at an exciton permeable interface. The role of spin, energetic disorder, and thermal activation on L D are also addressed. Organic semiconductors that exhibit thermally activated delayed fluorescence and efficient intersystem and reverse intersystem crossing highlight the balance between singlet and triplet exciton energy transfer and diffusion. Temperature dependent measurements for LD provide insight into the inhomogeneously broadened exciton density of states and the thermal nature of exciton energy transfer. Additional topics include energy-cascade OPV architectures and broadband, spectrally tunable photodetectors based on organic semiconductors.

  11. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    The developments with coherent control (CC) techniques in optical spectroscopy have recently demonstrated population control and coherence manipulations when the induced optical phase is explored with phase-locked laser pulses. These and other developments have been guiding the new research field...... of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase-locked...

  12. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  13. Wide band gap semiconductor templates

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  14. Bonds and bands in semiconductors

    CERN Document Server

    Phillips, Jim

    2009-01-01

    This classic work on the basic chemistry and solid state physics of semiconducting materials is now updated and improved with new chapters on crystalline and amorphous semiconductors. Written by two of the world's pioneering materials scientists in the development of semiconductors, this work offers in a single-volume an authoritative treatment for the learning and understanding of what makes perhaps the world's most important engineered materials actually work. Readers will find: --' The essential principles of chemical bonding, electron energy bands and their relationship to conductive and s

  15. The Novel Semiconductor Nanowire Heterostructures

    Institute of Scientific and Technical Information of China (English)

    J.Q.Hu; Y.Bando; J.H.Zhan; D.Golberg

    2007-01-01

    1 Results If one-dimensional heterostructures with a well-defined compositional profile along the wire radial or axial direction can be realized within semiconductor nanowires, new nano-electronic devices,such as nano-waveguide and nano-capcipator, might be obtained. Here,we report the novel semiconducting nanowire heterostructures:(1) Si/ZnS side-to-side biaxial nanowires and ZnS/Si/ZnS sandwich-like triaxial nanowires[1],(2) Ga-Mg3N2 and Ga-ZnS metal-semiconductor nanowire heterojunctions[2-3]and (3) ...

  16. Electronic Structure of Semiconductor Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.

  17. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  18. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  19. The processing of semiconductor materials

    Science.gov (United States)

    1979-01-01

    Five experiments involving the processing of semiconductor materials were performed during the Skylab mission. After discussions on semiconductors and their unique electronic properties, and techniques of crystal growth, these five experiments are presented. Four melt growth experiments were attempted: (1) steady state growth and segregation under zero gravity (InSb); (2) seeded, containerless solidification of InSb; (3) influence of gravity-free solidification on microsegregation; and (4) directional solidification of InSb-GaSb alloys. One vapor growth experiment, crystal growth by vapor transport, was attempted.

  20. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther;

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  1. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  2. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  3. Unsupervised learning of binary vectors

    Science.gov (United States)

    Copelli Lopes da Silva, Mauro

    In this thesis, unsupervised learning of binary vectors from data is studied using methods from Statistical Mechanics of disordered systems. In the model, data vectors are distributed according to a single symmetry-breaking direction. The aim of unsupervised learning is to provide a good approximation to this direction. The difference with respect to previous studies is the knowledge that this preferential direction has binary components. It is shown that sampling from the posterior distribution (Gibbs learning) leads, for general smooth distributions, to an exponentially fast approach to perfect learning in the asymptotic limit of large number of examples. If the distribution is non-smooth, then first order phase transitions to perfect learning are expected. In the limit of poor performance, a second order phase transition ("retarded learning") is predicted to occur if the data distribution is not biased. Using concepts from Bayesian inference, the center of mass of the Gibbs ensemble is shown to have maximal average (Bayes-optimal) performance. This upper bound for continuous vectors is extended to a discrete space, resulting in the clipped center of mass of the Gibbs ensemble having maximal average performance among the binary vectors. To calculate the performance of this best binary vector, the geometric properties of the center of mass of binary vectors are studied. The surprising result is found that the center of mass of infinite binary vectors which obey some simple constraints, is again a binary vector. When disorder is taken into account in the calculation, however, a vector with continuous components is obtained. The performance of the best binary vector is calculated and shown to always lie above that of Gibbs learning and below the Bayes-optimal performance. Making use of a variational approach under the replica symmetric ansatz, an optimal potential is constructed in the limits of zero temperature and mutual overlap 1. Minimization of this potential

  4. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/AlxGa1-xAs as a model system

    Science.gov (United States)

    Yi, Wei; Narayanamurti, Venkatesh; Lu, Hong; Scarpulla, Michael A.; Gossard, Arthur C.

    2010-06-01

    Utilizing three-terminal tunnel emission of ballistic electrons and holes in a planar tunnel transistor with a Mott-barrier collector, we have developed a method to self-consistently determine the energy gap of a semiconductor and band discontinuities at a semiconductor heterojunction without using a priori material parameters. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs (100) single-barrier double heterostructures with AlxGa1-xAs as the model ternary III-V compounds. Electronic band gaps of the AlGaAs alloys and band offsets at the GaAs/AlGaAs (100) interfaces are measured with a resolution of several meV at 4.2 K. The direct-gap Γ band offset ratio for the GaAs/AlGaAs (100) interface is found to be 59:41 (±3%) . Reexamination of our previous experiment [W. Yi , Appl. Phys. Lett. 95, 112102 (2009)10.1063/1.3224914] revealed that, in the indirect-gap regime, ballistic electrons from direct tunnel emissions probe the X valley in the conduction band, while those from Auger-like scattering processes in the metal base film probe the higher-lying L valley. Such selective electron collection may be explained by their different momentum distributions and parallel momentum conservation at the quasiepitaxial Al/GaAs (100) interface. We argue that the present method is in principle applicable to arbitrary type-I semiconductor heterostructures.

  5. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  6. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  7. Semiconductor devices having a recessed electrode structure

    Science.gov (United States)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  8. Semiconductor nanocrystal-based phagokinetic tracking

    Science.gov (United States)

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  9. Semiconductor assisted metal deposition for nanolithography applications

    Science.gov (United States)

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  10. Semiconductor electrode with improved photostability characteristics

    Science.gov (United States)

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  11. Crystal growth of semiconductors in microgravity; Bisho juryokuka no handotai kessho seicho

    Energy Technology Data Exchange (ETDEWEB)

    Kinoshita, K. [Nippon Telegraph and Telephone Corp., Tokyo (Japan)

    1998-03-20

    Most of crystal growth methods handle liquids or gases except recrystallizing methods of solids. Since the effect of a microgravity appears as macro-change in motion or form of liquids or gases, effective use of microgravity environment can produce high-quality crystals which have been never obtained on the earth. Based on major experiments on crystal growth of the 1990s, this paper outlines the effect of a microgravity on crystal growth, and some future issues. The space crystal growth experiments of III-V group compound semiconductors were carried out using International Microgravity Laboratory (IML), Fuwatto`92, Chinese reusable satellite, and Free Flyer (SFU). Melts, liquids and gases were used as materials for these crystal growth experiments. These experiments aimed at production of high-quality crystals by using the effects of non-convection, non- buoyancy, non-sedimentation, non-static pressure and isolated floating under microgravity environment. Systematic researches are most important toward the coming era of an international space base. 27 refs., 3 figs.

  12. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

    Science.gov (United States)

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q.

    2016-01-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula. PMID:27307081

  13. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

    Science.gov (United States)

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q.

    2016-06-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.

  14. Binary Encodings of Non-binary Constraint Satisfaction Problems: Algorithms and Experimental Results

    CERN Document Server

    Samaras, N; 10.1613/jair.1776

    2011-01-01

    A non-binary Constraint Satisfaction Problem (CSP) can be solved directly using extended versions of binary techniques. Alternatively, the non-binary problem can be translated into an equivalent binary one. In this case, it is generally accepted that the translated problem can be solved by applying well-established techniques for binary CSPs. In this paper we evaluate the applicability of the latter approach. We demonstrate that the use of standard techniques for binary CSPs in the encodings of non-binary problems is problematic and results in models that are very rarely competitive with the non-binary representation. To overcome this, we propose specialized arc consistency and search algorithms for binary encodings, and we evaluate them theoretically and empirically. We consider three binary representations; the hidden variable encoding, the dual encoding, and the double encoding. Theoretical and empirical results show that, for certain classes of non-binary constraints, binary encodings are a competitive op...

  15. Emission and Absorption Entropy Generation in Semiconductors

    DEFF Research Database (Denmark)

    Reck, Kasper; Varpula, Aapo; Prunnila, Mika;

    2013-01-01

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor ...

  16. Semiconductor films on flexible iridium substrates

    Science.gov (United States)

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  17. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  18. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  19. Atomistic Models of Amorphous Semiconductors

    NARCIS (Netherlands)

    Jarolimek, K.

    2011-01-01

    Crystalline silicon is probably the best studied material, widely used by the semiconductor industry. The subject of this thesis is an intriguing form of this element namely amorphous silicon. It can contain a varying amount of hydrogen and is denoted as a-Si:H. It completely lacks the neat long ran

  20. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...