Sample records for bifeo3 thin films

  1. Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

    Directory of Open Access Journals (Sweden)

    Hao-Min Xu


    Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

  2. Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination

    NARCIS (Netherlands)

    Solmaz, Alim; Huijben, Mark; Koster, Gertjan; Egoavil, Ricardo; Gauquelin, Nicolas; Van Tendeloo, Gustaaf; Verbeeck, Jo; Noheda, Beatriz; Rijnders, Guus


    Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial r

  3. Epitaxial ferroelectric BiFeO3 thin films for unassisted photocatalytic water splitting (United States)

    Ji, Wei; Yao, Kui; Lim, Yee-Fun; Liang, Yung C.; Suwardi, Ady


    Considering energy band alignment and polarization effect, ferroelectric BiFeO3 thin films are proposed as the photoanode in a monolithic cell to achieve unassisted photocatalytic water splitting. Significant anodic photocurrent was observed in our epitaxial ferroelectric BiFeO3 films prepared from sputter deposition. Both negative polarization charges and thinner films were found to promote the anodic photocatalytic reaction. Ultraviolet photoelectron spectroscopy proved that the conduction and valence band edges of BiFeO3 straddle the water redox levels. Theoretical analyses show that the large switchable polarization can modify the surface properties to promote the hydrogen and oxygen evolutions on the surfaces with positive and negative polarization charges, respectively.

  4. Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation (United States)

    Wang, Jie-Su; Jin, Kui-Juan; Guo, Hai-Zhong; Gu, Jun-Xing; Wan, Qian; He, Xu; Li, Xiao-Long; Xu, Xiu-Lai; Yang, Guo-Zhen


    BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films.

  5. Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation. (United States)

    Wang, Jie-Su; Jin, Kui-Juan; Guo, Hai-Zhong; Gu, Jun-Xing; Wan, Qian; He, Xu; Li, Xiao-Long; Xu, Xiu-Lai; Yang, Guo-Zhen


    BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films.

  6. Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation (United States)

    Wang, Jie-su; Jin, Kui-juan; Guo, Hai-zhong; Gu, Jun-xing; Wan, Qian; He, Xu; Li, Xiao-long; Xu, Xiu-lai; Yang, Guo-zhen


    BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films. PMID:27905565

  7. Preparation of BiFeO3 thin films by pulsed laser deposition method

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guan-jun; CHENG Jin-rong; CHEN Rui; YU Sheng-wen; MENG Zhong-yan


    BiFeO3 (BFO) thin films were prepared on Pt(111)/TiO2/SiO2/Si(100) substrates by the pulsed-laser deposition (PLD) technique at a low temperature of 450℃. The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO thin films. The dielectric constant of the BFO thin films decreases with increasing oxygen pressures,achieving 186,171 and 160 at the frequency of 104 Hz for the oxygen pressures of 0.666,1.333 and 13.332 Pa,respectively. The BFO thin films prepared at the oxygen pressure of 0.666 Pa reveal a saturated hysteresis loop with the remanent polarization of 7.5 μC/cm2 and the coercive field of 176 kV/cm.

  8. Heteroepitaxial growth and characterization of BiFeO3 thin films on GaAs (United States)

    Shafiqur Rahman, Md; Ghose, Susmita; Gatabi, Javad R.; Rojas-Ramirez, Juan S.; Pandey, R. K.; Droopad, Ravi


    The paper deals with the integration of well-known bismuth ferrite (BiFeO3) multiferroic oxide with GaAs semiconductor. First 5 nm ultrathin SrTiO3 films were grown on GaAs (001) substrates as an intermediate buffer layer by molecular beam epitaxy. Then, room temperature multiferroic BiFeO3 (BFO) thin films were deposited by pulsed laser deposition. X-ray diffraction measurement showed high quality epitaxial BFO films with pure (00l) orientation. The dielectric loss has been effectively suppressed and the saturated polarization-voltage (P-V) hysteresis loops were obtained. The ferroelectric domains switching was affirmed by piezo-response force microscopic studies. A large remnant polarization P r (˜80 μC cm-2) combined with the enhanced magnetization (72 emu cm-3) at 300 K was achieved for the optimal growth conditions. The optical properties were measured using the ellipsometry technique for the BFO thin films. The thickness and optical constants of the BFO films were obtained by taking into consideration the dielectric parameters as described by the Tauc-Lorentz model. Finally, direct bandgap was estimated at 2.70 eV which is highly comparable to BFO films grown on different substrates.

  9. Transport properties of Ar+ irradiated resistive switching BiFeO3 thin films (United States)

    Jin, L.; Shuai, Y.; Ou, X.; Luo, W. B.; Wu, C. G.; Zhang, W. L.; Bürger, D.; Skorupa, I.; You, T.; Du, N.; Schmidt, O. G.; Schmidt, H.


    BiFeO3 thin films were irradiated by Ar+ ions with different fluences. The rectifying and resistive switching behaviour were retained on the Au/BiFeO3/Pt stack, and the ON/OFF ratio clearly depends on the Ar+ fluence. It was observed that the transport in high resistance state changes from Poole-Frenkel conduction to space-charge-limited conduction after irradiation. While the conduction of the low resistance state is dominated by both the interface and the bulk thin film in the pristine devices, however, it is only dominated by the interface in the irradiated devices. The observed change of conduction mechanism was explained by additionally created oxygen vacancies (OVs) during irradiation, which also improves the stability of resistive switching.

  10. Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

    KAUST Repository

    Yao, Yingbang


    Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.

  11. Multiferroic BiFeO3 thin films for multifunctional devices. (United States)

    Singh, Manish K; Yang, Yi; Takoudis, Christos G; Tatarenko, A; Srinivasan, G; Kharel, P; Lawes, G


    We report the metalorganic chemical vapor deposition of crystalline BiFeO3 films on platinized silicon substrates using n-butylferrocene, triphenylbismuth and oxygen. Based on thermogravimetric analysis data, the suitability of these two precursors for depositing BiFeO3 is discussed. The deposited films were characterized for structure and morphology using X-ray diffraction and scanning electron microscopy. Composition analysis using X-ray photoelectron spectroscopy revealed that the films were stoichiometric BiFeO3. Electrostatic force microscopy indicated that the film had polarizable domains that showed no deterioration in polarization over time long after electric poling. The film showed a saturation magnetization of 10 +/- 1 emu/cm3 at room temperature.

  12. Preparation and characterization of BiFeO3 thin films by the LPD on OH-functionalized organic SAMs

    Institute of Scientific and Technical Information of China (English)


    BiFeO3 (BFO) thin films were grown on OH-functionalized organic self-assembled monolayers (SAMs) via liquid-phase deposition (LPD) method at a temperature below 100°C. The BiFeO3 thin films were induced to synthesize on the OH-functionalized organic OTS monolayers prepared on hydroxylated glass substrate by self-assembling technique. The hydrophilic characteristic of the as-prepared OTS-SAMs was measured by contact angle tester. The crystal phase composition, microstructure and topography of the as-synthesized BFO thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy disperse spectroscopy (EDS) and atomic force microscope (AFM), respectively. Results show that compact and homogeneous BFO thin films can be formed on the OH-functionalized SAMs at low temperature.

  13. Ferroelectric size effects in multiferroic BiFeO3 thin films

    NARCIS (Netherlands)

    Chu, Y.-H.; Zhao, T.; Cruz, M.P.; Zhan, Q.; Yang, P.L.; Martin, L.W.; Huijben, M.; Yang, C.H.; Zavaliche, F.; Zheng, H.; Ramesh, R.


    Ferroelectric size effects in multiferroic BiFeO3 have been studied using a host of complementary measurements. The structure of such epitaxial films has been investigated using atomic force microscopy, transmission electron microscopy, and x-ray diffraction. The crystal structure of the films has b

  14. Temperature dependent dielectric and ferroelectric studies of BiFeO3 thin film (United States)

    Gaur, Anand P. S.; Barik, Sujit K.; Katiyar, Ram S.


    Although BiFeO3 (BFO) has received a lot of interest due to its good multiferroic properties at room temperature, high leakage current limit its usage for practical applications. Recently, it is found that these properties in thin films can be different due to strain effect induced by substrate, preparation conditions and electrode effects, etc. In this context, we have studied the temperature dependence of polarization and dielectric properties of BFO thin film by varying the bottom electrode thickness and using different electrodes. The strain dependent ferroelectric switching behaviors have also been investigated with a traditional ferroelectric tester and switching spectroscopy piezoresponse force microscopy (SS-PFM), respectively. We used pulsed laser deposition to fabricate thin films of BFO using Si (100) substrate and SrTiO3(STO) as buffer layer with different bottom electrodes such as SrRuO3(SRO), LaNiO3(LNO) and Pt/Si. The thickness of STO layer is kept fixed around 70 nm and the thicknesses of BFO and electrode layer were varied from 70 nm to 200nm. The layers were grown under optimized conditions and polycrystalline nature is found from room temperature XRD. A large enhancement of polarization is found while using LNO electrode and also with reducing the thickness of BFO layer. The remnant polarization and cohesivity also shows large increase with increaisng temperature, although leakage current increases significantly. NSF

  15. Interfacial-strain-induced structural and polarization evolutions in epitaxial multiferroic BiFeO3 (001) thin films. (United States)

    Guo, Haizhong; Zhao, Ruiqiang; Jin, Kui-Juan; Gu, Lin; Xiao, Dongdong; Yang, Zhenzhong; Li, Xiaolong; Wang, Le; He, Xu; Gu, Junxing; Wan, Qian; Wang, Can; Lu, Huibin; Ge, Chen; He, Meng; Yang, Guozhen


    Varying the film thickness is a precise route to tune the interfacial strain to manipulate the properties of the multiferroic materials. Here, to explore the effects of the interfacial strain on the properties of the multiferroic BiFeO3 films, we investigated thickness-dependent structural and polarization evolutions of the BiFeO3 films. The epitaxial growth with an atomic stacking sequence of BiO/TiO2 at the interface was confirmed by scanning transmission electron microscopy. Combining X-ray diffraction experiments and first-principles calculations, a thickness-dependent structural evolution was observed from a fully strained tetragonality to a partially relaxed one without any structural phase transition or rotated twins. The tetragonality (c/a) of the BiFeO3 films increases as the film thickness decreases, while the polarization is in contrast with this trend, and the size effect including the depolarization field plays a crucial role in this contradiction in thinner films. These findings offer an alternative strategy to manipulate structural and polarization properties by tuning the interfacial strain in epitaxial multiferroic thin films.

  16. Surface reconstructions and related local properties of a BiFeO3 thin film (United States)

    Jin, L.; Xu, P. X.; Zeng, Y.; Lu, L.; Barthel, J.; Schulthess, T.; Dunin-Borkowski, R. E.; Wang, H.; Jia, C. L.


    Coupling between lattice and order parameters, such as polarization in ferroelectrics and/or polarity in polar structures, has a strong impact on surface relaxation and reconstruction. However, up to now, surface structures that involve the termination of both matrix polarization and polar atomic planes have received little attention, particularly on the atomic scale. Here, we study surface structures on a BiFeO3 thin film using atomic-resolution scanning transmission electron microscopy and spectroscopy. Two types of surface structure are found, depending on the polarization of the underlying ferroelectric domain. On domains that have an upward polarization component, a layer with an Aurivillius-Bi2O2-like structural unit is observed. Dramatic changes in local properties are measured directly below the surface layer. On domains that have a downward polarization component, no reconstructions are visible. Calculations based on ab initio density functional theory reproduce the results and are used to interpret the formation of the surface structures. PMID:28102296

  17. Polycrystalline BiFeO3 thin film synthesized via sol-gel assisted spin coating technique for photosensitive application (United States)

    Bogle, K. A.; Narwade, R. D.; Phatangare, A. B.; Dahiwale, S. S.; Mahabole, M. P.; Khairnar, R. S.


    We are reporting photosensitivity property of BiFeO3 thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO3/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

  18. Ultrafast carrier dynamics and radiative recombination in multiferroic BiFeO3 single crystals and thin films

    Directory of Open Access Journals (Sweden)

    Taylor A. J.


    Full Text Available We report a detailed comparison of ultrafast carrier dynamics in single crystals and thin films of multiferroic BiFeO3 (BFO. Using degenerate femtosecond optical pump-probe spectroscopy, we find that the observed dynamics are qualitatively similar in both samples. After photoexcitation, electrons relax to the conduction band minimum through electron-phonon coupling, with subsequent carrier relaxation proceeding via various recombination pathways that extend to a nanosecond timescale. Subtle differences observed in our measurements indicate that BFO films have a higher band gap than single crystals. Overall, our results demonstrate that carrier relaxation in BFO is analogous to that in bulk semiconductors.

  19. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto


    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  20. Studies on forming gas annealing treated BiFeO3 thin films and capacitors (United States)

    Lee, Chia-Ching; Wu, Lin-Jung; Wu, Jenn-Ming


    The structure and electric properties of BiFeO3(BFO )/BaPbO3(BPO) and Pt/BFO/BPO capacitors with forming gas annealing (FGA) treatment were investigated. X-ray diffraction patterns indicated that the annealing did not affect the structure and phase of BFO films. A degraded electric property was obtained in FGA-treated Pt/BFO/BPO films. It can be attributed to the formation of reduction and incomplete reduction of Bi+3 of BFO. Retention and fatigue properties were obtained in FGA-treated BPO/BFO/BPO capacitors. The normalized Pr loss was 22.8% after applying a voltage above 2Vc (coercive voltage) with 1011cycles. The retention behavior within 30000s is governed by the logarithmic time dependence.

  1. Dielectric properties of BiFeO3-PbTiO3 thin films prepared by PLD

    Institute of Scientific and Technical Information of China (English)

    CHEN Rui; YU Sheng-wen; ZHANG Guan-jun; CHENG Jin-rong; MENG Zhong-yan


    BiFeO3-PbTiO3 (BFO-PT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD) technique under different oxygen pressures. The structures of the films were characterized by means of XRD. The current densities were performed to check the conductivity of the films. The dielectric constant and loss factor (tanδ) of the films were measured. The results show that the BFO-PT layers are mainly perovskite structured:the film deposited under 6.665 Pa exhibits low leakage current,low dielectric loss (0.017-0.041) and saturated hysteresis loop with polarization (Pr) value and coercive field (Ec) of 3 μC/cm2 and 109 kV/cm.

  2. Local Probing of Magnetoelectric Coupling and Magnetoelastic Control of Switching in BiFeO3-CoFe2O4 Thin-Film Nanocomposite (United States)


    also result in an increase in the polarization of rhombohedral BFO, as verified by experi- ment25 and by first principles calculations.26 Thus, the...The collection of PFM under an applied variable magnetic field within a polycrystalline perovskite -spinel BiFeO3-CoFe2O4 (BFO-CFO) 0-3 type thin...magnetic field within a polycrystalline perovskite -spinel BiFeO3-CoFe2O4 (BFO-CFO) 0-3 type thin-film nanocomposite enables quantitative and

  3. Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films

    Institute of Scientific and Technical Information of China (English)

    芦增星; 高兴森; 严志波; 刘俊明; 宋骁; 赵丽娜; 李忠文; 林远彬; 曾敏; 张璋; 陆旭兵; 吴素娟


    We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current–voltage (I–V ) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (253 K), the I–V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduc-tion switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of>298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.

  4. Microstructure and conduction behavior of BiFeO3 thin film deposited on Ge-doped ZnO (United States)

    Raghavan, Chinnambedu Murugesan; Choi, Ji Ya; Kim, Sang Su


    BiFeO3 (BFO) thin films were deposited on a Ge-doped ZnO (GZO)/Si(100) and a Pt(111)/Ti/SiO2/Si(100) using a pulsed laser deposition technique. An improved crystal growth property was observed for the BFO thin film deposited on the GZO/Si(100). The BFO thin film, which was deposited on the (00 l) textured GZO/Si(100), exhibited preferred ( l00) orientated grains, while randomly orientated grains were observed for the thin film deposited on the Pt(111)/Ti/SiO2/Si(100). When compared with the Pt/BFO/Pt capacitor, the GZO/BFO/GZO capacitor exhibited improved conduction behaviors, such as a low leakage current density and high stability against electrical breakdown. From the J-E curves, conduction of the GZO/BFO/GZO and the Pt/BFO/Pt capacitors was found to be dominated by Ohmic and space charge limited conductions at low and high electric field, respectively.

  5. Perovskite BiFeO3 thin film photocathode performance with visible light activity (United States)

    Yilmaz, P.; Yeo, D.; Chang, H.; Loh, L.; Dunn, S.


    Perovskite materials are now an important class of materials in the application areas of photovoltaics and photocatalysis. Inorganic perovskites such as BiFeO3 (BFO) are promising photocatalyst materials with visible light activity and inherent stability. Here we report the large area sol-gel synthesis of BFO films for solar stimulated water photo oxidation. By modifying the sol-gel synthesis process we have produced a perovskite material that has p-type behaviour and a flat band potential of ˜1.15 V (versus NHE). The photocathode produces a density of -0.004 mA cm-2 at 0 V versus NHE under AM1.5 G illumination. We further show that 0.6 μmol h-1 of O2 was produced at an external bias of -0.5 V versus Ag/AgCl. The addition of a non-percolating conducting network of Ag increases the photocurrent to -0.07 mA cm-2 at 0 V versus NHE (at 2% Ag loading) with an increase to 2.7 μmol h-1 for O2 production. We attribute the enhancement in photoelectrochemical performance to increased light absorption due light scattering by the incorporated Ag particles, improved charge transfer kinetics at the Ag/BFO interface and reduced over potential losses. We support these claims by an observed shift in flat band and onset potentials after Ag modification through UV-vis spectroscopy, Mott-Schottky plots and j-v curve analysis.

  6. Optical and grain boundary potential characteristics of sulfurized BiFeO3 thin films for photovoltaic applications. (United States)

    Lee, Seung Min; Cho, Yong Soo


    Sulfurized BiFeO3 (BFO) thin films have been investigated with the purpose of reducing their band gap for photovoltaic applications. A strong dependence of the degree of sulfurization on the structure and optical properties of the BFO thin films was observed. The sulfurization process substantially reduced the optical band gap from 2.83 eV for the reference sample to ∼1.90 eV in a sample sulfurized at 200 °C, a temperature at which the BFO phase was still dominant. The existence of the secondary Bi2S3 phase was found to be initiated from the film surface and became dominant at higher temperatures. XPS analysis suggests potential Bi-Fe(iii)-Fe(ii)-S-O compounds as a result of the change of the oxidation state of Fe with the progress of sulfurization. The sulfurized BFO film exhibited relatively higher positively charged grain boundaries than the reference film, suggesting its improved applicability in photovoltaic devices.

  7. Swift heavy ion irradiation induced modification of structure and surface morphology of BiFeO3 thin film

    Indian Academy of Sciences (India)

    B N Dash; P Mallick; P Dash; R Biswal; Jai Prakash; A Tripathi; D Kanjilal; N C Mishra


    BiFeO3 (BFO) thin films of thickness about 800 nm deposited on Si (100) substrates by sol–gel spin coating method were irradiated by 200 MeV Ag ions. Modification of structure and surface morphology of the films under irradiation was studied using glancing incidence X-ray diffraction (GIXRD) and atomic force microscope (AFM). Fluence dependence of GIXRD peak intensity indicated formation of 10 nm diameter cylindrical amorphous columns in crystalline BFO due to 200 MeV Ag ion irradiation. AFM analysis indicated that the pristine film consists of agglomerated grains with diffuse grain boundary. Irradiation led to reduced agglomeration of the grains with the formation of sharper grain boundaries. The rms roughness (rms) estimated from AFM analysis increased from 6.2 in pristine film to 12.7 nm when the film irradiated at a fluence of 1 × 1011 ions cm-2. Further irradiation led to decrease of rms which finally saturated at a value of 7–8 nm at high ion fluences. The power spectral density analysis indicated that the evolution of surface morphology of the pristine film is governed by the combined effect of evaporation condensation and volume diffusion processes. Swift heavy ion irradiation seems to increase the dominance of volume diffusion in controlling surface morphology of the film at high ion fluences.

  8. The Evidence of Giant Surface Flexoelectric Field in (111) Oriented BiFeO3 Thin Film. (United States)

    Yang, Tieying; Zhang, Xingmin; Chen, Bin; Guo, Haizhong; Jin, Kuijuan; Wu, Xiaoshan; Gao, Xingyu; Li, Zhong; Wang, Can; Li, Xiaolong


    In this work, the surface structure of a single-domain epitaxial BiFeO3 film with (111) orientation was investigated by in situ grazing incidence X-ray diffraction and X-ray reflectivity. We found that a large strain gradient exists in the surface region (2-3 nm) of the BiFeO3 film. The strain gradient is approximately 10(7) m(-1), which is 2 or 3 orders of magnitude larger than the value inside the film. Moreover, we found that a surface layer with a lower electron density compared with the underlying BiFeO3 layer exists on the surface of BiFeO3 film, and this layer exhibits an irreversible surface structure transition occurs at 500 K, which should be associated with the surface flexoelectric field. We considered that this large strain gradient is originated from the surface depolarization field of ferroelectrics. Our results suggest a coupling between the surface structure and the flexoelectricity and imply that the surface layer and properties would be controlled by the strain gradient in ferroelectric films.

  9. Thickness-dependent retention behaviors and ferroelectric properties of BiFeO3 thin films on BaPbO3 electrodes (United States)

    Lee, Chia-Ching; Wu, Jenn-Ming


    BiFeO3 (BFO) thin films produced with varied film thicknesses ranging from 100to230nm were fabricated on BaPbO3(BPO )/Pt/Ti/SiOx/Si substrates by rf-magnetron sputtering. Saturated polarization-electrical field hysteresis loops, polarization response by pulse measurement, and retention properties were obtained for BFO films with various thicknesses on BPO. The retention behaviors of BFO demonstrate logarithmic time dependence and stretched exponential law. When the thicknesses of BFO films increase, the contribution of logarithmic time dependence to retention, the stretched exponential law becomes dominant. BFO films with thinner thickness exhibit better retention properties but possess smaller remnant polarization.

  10. Synthesis of BiFeO3 thin films on single-terminated Nb : SrTiO3 (111 substrates by intermittent microwave assisted hydrothermal method

    Directory of Open Access Journals (Sweden)

    Ivan Velasco-Davalos


    Full Text Available We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO3 (111 substrates and the deposition of ferroelectric BiFeO3 thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO34− or Ti4+ layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d111 and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO3 single crystal substrates. Multiferroic BiFeO3 thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO3 (111 substrates. Bi(NO33 and Fe(NO33 along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO3 films on Nb : SrTiO3 (100 substrates was verified by piezoresponse force microscopy.

  11. Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

    Directory of Open Access Journals (Sweden)

    Zhenhua Tang


    Full Text Available The Ce and Mn co-doped BiFeO3 (BCFMO thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS and bipolar resistive switching (BRS behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80, long retention time (>105 s and low programming voltages (<1.5 V. Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC and Schottky emission were observed as the conduction mechanisms of the devices.

  12. Growth of epitaxial Mn and Zn codoped BiFeO3 thin films and an enhancement of photovoltage generated by a bulk photovoltaic effect (United States)

    Nakashima, Seiji; Takayama, Kota; Shigematsu, Koji; Fujisawa, Hironori; Shimizu, Masaru


    Recently, the bulk photovoltaic effect of BiFeO3 (BFO) thin films has attracted much attention because of its above bandgap photovoltage for realizing novel photovoltaic devices. In this study, the epitaxial growth of 1-µm-thick Mn and Zn codoped BFO thin films has been demonstrated, and the effects of Mn and Zn codoping on the ferroelectric and bulk photovoltaic properties of the BFO thin films have been investigated. A 0.5% Mn and 0.5% Zn codoped BFO (BFMZO050) thin film on a SrRuO3-buffered vicinal-SrTiO3(001) substrate showed an atomically flat surface with a step-and-terrace structure, a low leakage current of 1.5 × 10-6 A/cm2 at 100 kV/cm, and well-saturated ferroelectric electric displacement-electric field (D-E) hysteresis loops. In addition, a Pt/BFMZO/Pt coplanar capacitor with an interelectrode distance of 260 µm illuminated by a violet laser (λ = 405 nm) showed an enhanced photovoltage of 145 V owing to the reduction in photoconductance by Mn and Zn codoping.

  13. Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method (United States)

    Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish


    We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

  14. Thickness-dependent phase boundary in Sm-doped BiFeO3 piezoelectric thin films on Pt/Ti/SiO2/Si substrates. (United States)

    Sun, Wei; Li, Jing-Feng; Zhu, Fangyuan; Yu, Qi; Cheng, Li-Qian; Zhou, Zhen


    Sm-doped BiFeO3 thin films were fabricated on platinized silicon substrates via a sol-gel method. Sm contents and thicknesses were varied in a wide range to investigate their effects on the phase structure and piezoelectricity. X-ray diffraction and Raman spectroscopy experiments revealed a rhombohedral to orthorhombic phase transition and the co-existence of both phases in a certain compositional vicinity. It is found that the proportion of a rhombohedral phase increased with film thickness at the compositions corresponding to the phase transition boundary, indicating the influence of the film thickness on the phase structure. The phase transition phenomenon and film thickness effect on the boundary were also studied by piezoresponse force microscopy. Based on the structure analysis and piezoelectric characterization results, a phase diagram of thickness versus composition was proposed, in which the morphotropic phase boundary was located at 9% to 11% in thinner Sm-doped films and shifted towards the Sm-rich side with increasing thickness.

  15. Tuning the atomic and domain structure of epitaxial films of multiferroic BiFeO3

    NARCIS (Netherlands)

    Daumont, C. J. M.; Farokhipoor, S.; Ferri, A.; Wojdel, J. C.; Iniguez, Jorge; Kooi, B. J.; Noheda, Beatriz; Wojdeł, J.C.


    Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in these films. High-resolution x-ray diffraction and piezoforce mi

  16. Local leakage current behaviours of BiFeO3 films

    Institute of Scientific and Technical Information of China (English)

    Zou Cheng; Chen Bin; Zhu Xiao-Jian; Zuo Zheng-Hu; Liu Yi-Wei; Chen Yuan-Fu; Zhan Qing-Feng; Li Run-Wei


    The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements.The local charge transport pathways are found to be located mainly at the grain boundaries of the films.The leakage current density can be tuned by changing the post-annealing temperature,the annealing time,the bias voltage and the light illumination,which can be used to improve the performances of the ferroelectric devices based on the BiFeO3 films.A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films.

  17. Engineered magnetic shape anisotropy in BiFeO3-CoFe2O4 self-assembled thin films. (United States)

    Wang, Zhiguang; Li, Yanxi; Viswan, Ravindranath; Hu, Bolin; Harris, Vincent G; Li, Jiefang; Viehland, Dwight


    We report growth of various phase architectures of self-assembled BiFeO3-CoFe2O4 (BFO-CFO) thin films on differently oriented SrTiO3 (STO) substrates. CFO forms segregated square, stripe, and triangular nanopillars embedded in a coherent BFO matrix on (001)-, (110)-, and (111)-oriented STO substrates, respectively. Nanostructures with an aspect ratio of up to 5:1 with a prominent magnetic anisotropy were obtained on both (001) and (110) STO along out-of-plane and in-plane directions. Magnetic easy axis rotation from in-plane to out-of-plane directions was realized through aspect ratio control. An intractable in-plane anisotropy was fixed in CFO on (111) STO due to the triangular shape of the ferromagnetic phase nanopillars. These studies established a detailed relationship of magnetic anisotropy with specific shape and dimensions of ordered magnetic arrays. The results suggest a way to effectively control the magnetic anisotropy in patterned ferromagnetic oxide arrays with tunable shape, aspect ratio, and elastic strain conditions of the nanostructures.

  18. Element specific and depth-resolved interface magnetism in BiFeO3/La0.67Sr0.33MnO3 thin films (United States)

    Bertinshaw, Joel; Brück, Sebastian; Fritzsche, Helmut; Khaydukov, Yury; Soltwedel, Olaf; Keller, Thomas; Goering, Eberhard; Audehm, Patrick; Hutchison, Wayne; Maran, Ronald; Valanoor, Nagarajan; Klose, Frank; Ulrich, Clemens


    In recent years significant research has been conducted to probe the emergent physics of atomically sharp transition metal oxide layered systems. The spin, orbital and charge state at the interface has a drastic impact on the exhibited emergent physics. We have investigated epitaxial bi-layers of multiferroic BiFeO3 (BFO) / ferromagnetic La0.67Sr0.33MnO3 (LSMO). Polarized Neutron Reflectivity conducted at ANSTO, Chalk River, and FRM-II provided the absolute magnetic moment at the interface and X-ray Resonant Magnetic Reflectivity performed at BESSY II provided element specific magnetic information. We determined the precise magnetic properties of the bi-layer interface region, which indicated a region of depleted magnetization extending ~25Å into the LSMO at the interface, despite no FM in the BFO and in contrast to previous results on an inverse LSMO/BFO system. The importance of this result extends to the study and functionality of all strongly correlated thin film systems.

  19. Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

    KAUST Repository

    Yao, Yingbang


    (001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.


    Institute of Scientific and Technical Information of China (English)

    孙璟兰; 李亚巍; 李天信; 林铁; 陈静; 孟祥建; 褚君浩


    报道了铁酸铋薄膜样品在80K~300K温度范围直流电学输运性质的研究结果.利用同一前驱体不同老化时间,用化学溶液沉积法在钛酸锶衬底上制备出两种样品.在低阻样品中,低场下电流随电压变化遵从欧姆定律,电阻不随温度变化;而在中等强度外场下显示出肖特基二极管性质.在高阻样品中,低场下电流密度沿晶界分布,输运中的势垒能级为0.57eV;高场下电流的传输则遵从Frenkel-Poole模型,相关势垒能级0.12eV.低阻和高阻两种样品在85K温度下可测最大剩余极化分别为2.6μC/cm2和28.8μC/cm2.%DC electrical transport properties of perovskite BiFeO3 thin films were studied in the temperature range from 80K to 300K. The films with high or low resistance on SrTiO3 substrates were prepared by a chemical solution deposition method from the same precursor solution at different aged time. For the low resistance samples, the voltage dependence of current is ohmic and temperature independent at low electric fields. At a medium strength of electric field, it behaves like a typical Schottky diode. For the high resistance samples it is found that electric carriers move along the grain boundaries of the films with an activation energy of 0.57eV at low electric field while the conduction mechanism can be described with the Frenkel-Poole model with an energy barrier of 0.12eV at higher electric fields, The measurable maximum values of remnant polarization are 2. 6μC/cm2 and 28.8μC/cm2 at the temperature of 85K for the two kinds of samples, respectively.

  1. Modulation of ultrafast laser-induced magnetization precession in BiFeO3-coated La0.67Sr0.33MnO3 thin films (United States)

    Wan, Qian; Jin, KuiJuan; Wang, JieSu; Yao, HongBao; Gu, JunXing; Guo, HaiZhong; Xu, XiuLai; Yang, GuoZhen


    The ultrafast laser-excited magnetization dynamics of ferromagnetic (FM) La0.67Sr0.33MnO3 (LSMO) thin films with BiFeO3 (BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique. Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect. The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films, which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.

  2. Evidence of non-Dzyaloshinskii–Moriya ferromagnetism in epitaxial BiFeO3 films

    NARCIS (Netherlands)

    Prokhorov, V.G.; Kaminsky, G.G.; Kim, J.M.; Eom, T.W.; Park, J.S.; Lee, Y.P.; Svetchnikov, V.L.; Levtchenko, G.G.; Nikolaenko, Y.M.; Khokhlov, V.A.


    X-ray diffraction analysis and high-resolution electron microscopy of BiFeO3 films prepared by dc magnetron sputtering on single-crystal LaAlO3 (001) substrates reveal that the films have a highly c-oriented orthorhombic crystalline structure. The magnetic properties of the BiFeO3 films are typical

  3. Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

    KAUST Repository

    Yao, Yingbang


    Multiferroic BiFeO3-(K0.5Na0.5) 0.4(Sr0.6Ba0.4)0.8Nb 2O6 (BFO-KNSBN) trilayer thin films, were epitaxially grown on MgO(0 0 1) and SrTiO3(0 0 1) by using pulsed laser deposition (PLD). Their ferroelectric, magnetic, dielectric and optical properties were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis magnetic loop was observed in the KNSBN-BFO-KNSBN trilayer films, where exchange bias and secondary phase in the BFO layer played crucial roles. Interactions between adjacent layers were revealed by temperature-dependent Raman spectroscopic measurements. © 2013 Elsevier B.V. All rights reserved.

  4. Nd掺杂对BiFeO3薄膜微结构和电学性能的影响%The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films

    Institute of Scientific and Technical Information of China (English)

    高成; 杨静; 孟祥建; 白伟; 林铁; 孙璟兰; 褚君浩


    采用化学溶液方法,在LaNiO3/Si(100)衬底上生长了Nd掺杂的BiFeO3薄膜.XRD分析结果表明,随着Nd掺杂量的增加,薄膜晶格变小,Nd掺杂量为20%时,薄膜出现杂相.介电测试表明,随着Nd掺杂量的增加,介电常数和损耗减小,Nd掺杂量为2%的薄膜表现出很强的介电色散现象并出现介电损耗弛豫峰,其符合类德拜模型特征.随着Nd掺杂量增加,薄膜的漏电流减小,在低电场下,电流输运遵从SCLC模型,在高场下,电流输运遵循Poole-Frenkel模型.分析结果表明Nd掺杂对薄膜微结构和电学性能有显著影响.%The Nd doped BiFeO3thin films are prepared on LaNiO3/Si ( 100) substrate by chemical solution deposition method. The results of x-ray diffraction show that the lattice constant of thin films decreases with the increase of Nd content. The impurity phases are found in the thin film with 20% Nd content. The results of dielectric measurement indicate that the dielectric constant and loss of thin films decrease with the increase of Nd content. A very strong dielectric frequency dispersion and relaxation of dielectric loss peak occurs in the thin film with 2% Nd content and it follows Debye-like law. The leakage current of thin films decreases with the increase of Nd content. The current transport follows SCLC model in low electric field region and follows Poole-Frenkel model in high electric field region. These results suggest that Nd doping has a strong influence on microstructure and electric properties of BiFeO3thin films.

  5. Strain evolution of epitaxial tetragonal-like BiFeO3 thin films on LaAlO3(001) substrates prepared by sputtering and their bulk photovoltaic effect (United States)

    Nakashima, Seiji; Uchida, Tomohisa; Doi, Kentaro; Saitoh, Koh; Fujisawa, Hironori; Sakata, Osami; Katsuya, Yoshio; Tanaka, Nobuo; Shimizu, Masaru


    The structural evolution of high-quality 3.3-73.2-nm-thick tetragonal-like BiFeO3 (T-BFO) thin films grown on LaAlO3(001) substrates and the bulk photovoltaic effect of the films were investigated. The T-BFO films were grown by rf magnetron sputtering, showing the Peudellösung fringes around the T-BFO (001) diffraction peak in X-ray diffraction θ-2θ patterns. These indicate the structural coherence between the surface and the interface in the surface normal direction of the films. High-resolution synchrotron X-ray diffraction analysis and transmission electron microscopy reveal that the lattice relaxation behavior from the MA monoclinic to MC monoclinic structure occurs as the film thickness increases. The domain structure was partly controlled by using a vicinal LAO (001) substrate along [100]. Regarding the current-voltage characteristics of the Pt/T-BFO/Pt coplanar capacitor under violet laser illumination, T-BFO films show an anomalous photovoltaic effect with an open-circuit voltage of 6.1 V and a short-circuit current of -290 pA along the [100]T-BFO direction.

  6. Study on polarization characteristics of BiFeO3 thin films prepared by sol-gel spin-coating technology (United States)

    Jia, Ze; Wu, Xiao; Zhang, Mingming; Xu, Jianlong; Zhang, Naiwen; Liou, Juin J.


    The ferroelectric polarization properties of bismuth ferrite (BFO) thin films deposited on Pt(111)/TiO2/SiO2/Si(100) substrates by sol-gel spin-coating technology affected by the processes and dopants have been studied and analyzed tentatively. The results indicate BFO thin film should be introduced to a rapid thermal annealing (RTA) process at N2 atmosphere. The enhanced ferroelectric polarization properties were observed in Mn and La doped BFO thin films, because ion substitution may improve the inherent volatility of Bi atoms, valence fluctuation of Fe ions and magnetic spin structures, reducing the formation of oxygen vacancies. The increased remnant polarization observed in the BFO thin film with a lead zirconate titanate (PZT) seeding layer has also been analyzed as the probable results of small changes of lattice parameters caused by constraint stress, reduced defects and decreased leakage current density, which are contributed by the PZT seeding layer possibly. Moreover, the remnant polarization approximately 79 μC/cm2 is observed in (Bi0.95La0.05)FeO3 (BLFO) thin film with a PZT seeding layer, which is twice and treble the values of BFO thin films with and without a PZT seeding layer, indicating PZT seeding layer is much more effective for BLFO thin film which has a substitution at A site.

  7. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response (United States)

    Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.


    BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ chemical pressure and epitaxial strain on the appearance of nanoscale stripe structure which creates conditions for easy reorientation and high dielectric response, and could be of more general relevance for the field of materials science where engineered materials with huge response to external stimuli are a highly priced target.

  8. BiFeO3 thin films: Novel effects

    Indian Academy of Sciences (India)

    V R Palkar; R Pinto


    In this paper we report synthesis of phase-pure highly resistive magnetoelectric BiFeO3 thin films on Pt/TiO2/SiO2/Si substrate by using pulsed laser deposition technique. For the first time saturated ferroelectric hysteresis loop has been observed. It has confirmed the presence of ferroelectricity in BiFeO3 compound. The films exhibit dielectric anomaly near Neel temperature. This anomaly is related to the influence of vanishing magnetic order on the electric order. In situ domain alignment occurs during observation of the films under transmission electron microscope.

  9. Self-Poling of BiFeO3 Thick Films. (United States)

    Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej


    Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

  10. Electric and Magnetic Properties of Sputter Deposited BiFeO3 Films

    Directory of Open Access Journals (Sweden)

    N. Siadou


    Full Text Available Polycrystalline BiFeO3 films have been magnetron sputter deposited at room temperature and subsequently heat-treated ex situ at temperatures between 400 and 700°C. The deposition was done in pure Ar atmosphere, as the use of oxygen-argon mixture was found to lead to nonstoichiometric films due to resputtering effects. At a target-to-substrate distance d=2′′ the BiFeO3 structure can be obtained in larger range process gas pressures (2–7 mTorr but the films do not show a specific texture. At d=6′′ codeposition from BiFeO3 and Bi2O3 has been used. Films sputtered at low rate tend to grow with the (001 texture of the pseudo-cubic BiFeO3 structure. As the film structure does not depend on epitaxy similar results are obtained on different substrates. A result of the volatility of Bi, Bi rich oxide phases occur after heat treatment at high temperatures. A Bi2SiO5 impurity phase forms on the substrate side, and does not affect the properties of the main phase. Despite the deposition on amorphous silicon oxide substrate weak ferromagnetism phenomena and displaced loops have been observed at low temperatures showing that their origin is not strain. Ba, La, Ca, and Sr doping suppress the formation of impurity phases and leakage currents.

  11. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang


    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

  12. Stabilisation of Fe2O3-rich Perovskite Nanophase in Epitaxial Rare-earth Doped BiFeO3 Films. (United States)

    Zhang, Huairuo; Reaney, Ian M; Marincel, Daniel M; Trolier-McKinstry, Susan; Ramasse, Quentin M; MacLaren, Ian; Findlay, Scott D; Fraleigh, Robert D; Ross, Ian M; Hu, Shunbo; Ren, Wei; Rainforth, W Mark


    Researchers have demonstrated that BiFeO3 exhibits ferroelectric hysteresis but none have shown a strong ferromagnetic response in either bulk or thin film without significant structural or compositional modification. When remanent magnetisations are observed in BiFeO3 based thin films, iron oxide second phases are often detected. Using aberration-corrected scanning transmission electron microscopy, atomic resolution electron energy loss spectrum-mapping and quantitative energy dispersive X-ray spectroscopy analysis, we reveal the existence of a new Fe2O3-rich perovskite nanophase, with an approximate formula (Fe0.6Bi0.25Nd0.15)(3+) Fe(3+)O3, formed within epitaxial Ti and Nd doped BiFeO3 perovskite films grown by pulsed laser deposition. The incorporation of Nd and Bi ions on the A-site and coherent growth with the matrix stabilise the Fe2O3-rich perovskite phase and preliminary density functional theory calculations suggest that it should have a ferrimagnetic response. Perovskite-structured Fe2O3 has been reported previously but never conclusively proven when fabricated at high-pressure high-temperature. This work suggests the incorporation of large A-site species may help stabilise perovskite-structured Fe2O3. This finding is therefore significant not only to the thin film but also to the high-pressure community.

  13. Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films

    Directory of Open Access Journals (Sweden)

    Chuanwei Huang


    Full Text Available In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO3 ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO3 ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO3 ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO3 ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO3 ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO3 ultrathin films.

  14. Pillar shape modulation in epitaxial BiFeO3–CoFe2O4 vertical nanocomposite films

    Directory of Open Access Journals (Sweden)

    Dong Hun Kim


    Full Text Available Self-assembled epitaxial CoFe2O4-BiFeO3 nanocomposite films, in which pillars of CoFe2O4 grow within a single crystal BiFeO3 matrix, show both ferrimagnetism and ferroelectricity. The pillars typically have a uniform cross-section, but here two methods are demonstrated to produce a width modulation during growth by pulsed laser deposition. This was achieved by growing a blocking layer of BiFeO3 to produce layers of separated pillars or pillars with constrictions, or by changing the temperature during growth to produce bowling-pin shaped pillars. Modulated nanocomposites showed changes in their magnetic anisotropy compared to nanocomposites with uniform width. The magnetic anisotropy was interpreted as a result of magnetoelastic and shape anisotropies.

  15. Dependence of ferroelectric and magnetic properties on measuring temperatures for polycrystalline BiFeO(3) films. (United States)

    Naganuma, H; Inoue, Y; Okamura, S


    A multiferroic BiFeO(3) film was fabricated on a Pt/Ti/SiO(3)/Si(100) substrate by a chemical solution deposition (CSD) method, and this was followed by postdeposition annealing at 923 K for 10 min in air. X-ray diffraction analysis indicated the formation of the polycrystalline single phase of the BiFeO(3) film. A high remanent polarization of 89 microC/cm(2) was observed at 90 K together with a relatively low electric coercive field of 0.32 MV/cm, although the ferroelectric hysteresis loops could not be observed at room temperature due to a high leakage current density. The temperature dependence of the ferroelectric hysteresis loops indicated that these hysteresis loops lose their shape above 165 K, and the nominal remanent polarization drastically increased due to the leakage current. Magnetic measurements indicated that the saturation magnetization was less than 1 emu/cm(3) at room temperature and increased to approximately 2 emu/cm(3) at 100 K, although the spontaneous magnetization could not appear. The magnetization curves of polycrystalline BiFeO3 film were nonlinear at both temperatures, which is different with BiFeO3 single crystal.

  16. Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system (United States)

    Aramaki, Masaaki; Kariya, Kento; Yoshimura, Takeshi; Murakami, Shuichi; Fujimura, Norifumi


    The piezoelectric property of BiFeO3 films prepared on a (100) LaNiO3/Si(100) substrate using an rf magnetron sputtering system was investigated for their applications in MEMS vibration energy harvesters. The X-ray diffraction profiles indicate that (100)-oriented BiFeO3 films with thicknesses from 450 to 1750 nm were obtained at a deposition temperature of 510 °C. All the films showed well-defined ferroelectric hysteresis loops at room temperature. The thickness dependence of crystallinity and electrical properties indicated that the films have a bottom layer with a high defect density. The e 31,f piezoelectric coefficient and electromechanical coupling factor (k\\text{31,f}2) increase with increasing film thickness and reach -3.2 C/m2 and 3.3%, respectively, at a thickness of 1750 nm, which is considered to be caused by the decrease in defect density.

  17. Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates (United States)

    Himcinschi, Cameliu; Guo, Er-Jia; Talkenberger, Andreas; Dörr, Kathrin; Kortus, Jens


    BiFeO3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates with a conductive buffer layer (La0.7Sr0.3MnO3 or SrRuO3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows one to directly obtain a quantitative correlation between the strain and the shift of the Raman-active phonons. This is a prerequisite for making Raman scattering a strong tool to probe the strain coupling in multiferroic nanostructures. Using the Poisson's number for BiFeO3, one can determine the volume change induced by strain, and therefore the Grüneisen parameters for specific phonon modes.

  18. Optical and electrical properties of spray pyrolysis deposited nano-crystalline BiFeO3 films

    Directory of Open Access Journals (Sweden)

    Annapu Reddy Venkateswarlu


    Full Text Available The nano-crystalline BiFeO3 were prepared under controlled substrate temperature by spray pyrolysis method. Their structural, optical and electrical properties were studied and correlated. A blueshift (Δλ ∼ 8.17 nm in the absorbance peaks was observed in the films with decrease in grain size. The absorption coefficient spectra show defect transitions at 1.9 and 2.3 eV in large grain size films due to oxygen vacancies. The lowest leakage was observed in smaller grain size (< 20 nm films due to negligible oxygen vacancies, smooth surface roughness and large energy bang gap. The Poole-Frankel conduction mechanism has been found to be the predominant mechanism for the leakage current.

  19. Tunneling electroresistance effect in ultrathin BiFeO3-based ferroelectric tunneling junctions (United States)

    Yoong, Herng Yau; Wang, Han; Xiao, Juanxiu; Guo, Rui; Yang, Ping; Yang, Yi; Lim, Sze Ter; Wang, John; Venkatesan, T.; Chen, Jingsheng


    Tunneling electroresistance (TER) effect has been observed in high quality ultrathin BiFeO3 thin films. The growth quality of the ultrathin BiFeO3 films was confirmed using the synchrotron high resolution X-ray diffraction techniques as well as high-resolution transmission electron microscopy. Ferroelectric-based resistive switching behavior is observed down to 2 u.c. of BiFeO3 ultrathin film, which is way below the critical thickness of BiFeO3 thin films exhibiting ferroelectricity reported in the previous research works. Upon fitting mathematically using the direct tunneling model, it could be seen that there is an increase in the change in the average potential barrier height when the barrier thickness increases from 2 u.c. to 10 u.c., which also results in an increase in the TER ratio by one order of magnitude. These results are promising and pave the way for developing ultrathin BiFeO3 films to be adopted in the non-volatile memory applications.

  20. Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors. (United States)

    Ihlefeld, Jon F; Tian, Wei; Liu, Zi-Kui; Doolittle, W Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Ramesh, Ramamoorthy; Schlom, Darrell G


    BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.

  1. Magneto-electric Coupling in Domain Engineered Multiferroic Thin Film Heterostructures (United States)


    crystallographic orientations, (001)pc, (110)pc and (111)pc, of epitaxial monodomain BiFeO3 films in the vertical capacitor structure of Pt...SECURITY CLASSIFICATION OF: Epitaxial BiFeO3 (BFO) thin films have potential for designing novel magneto-electric devices if their unrivaled room...Aug-2013 Approved for Public Release; Distribution Unlimited Final Report: Magneto-electric Coupling in Domain Engineered Multiferroic Thin Film

  2. Highly (110)- and (111)-oriented BiFeO3 films on BaPbO3 electrode with Ru or Pt /Ru barrier layers (United States)

    Lee, Chia-Ching; Wu, Jenn-Ming; Hsiung, Chang-Po


    Highly (110)- and (111)-oriented BiFeO3 (BFO) films were fabricated with BaPbO3 (BPO )/Ru and BPO /Pt/Ru as electrode/barrier on Si substrates by rf-magnetron sputtering. The BPO /Ru and BPO /Pt/Ru stacks both induce oriented BFO films and act as diffusion barriers. The (110)- and (111)-oriented BFO films possess excellent ferroelectric properties with only minor leakage. The values of remnant polarization are almost the same, about 42μC/cm2, for (110)- and (111)-oriented BFO films. However, polarization measured under varying pulse widths demonstrates that the switching polarization in (111)-oriented BFO films is higher than in (110)-oriented films. Additionally, (111)-oriented BFO films exhibit better retention properties than (110)-oriented films.

  3. Etude des propriétés photoélectriques et magnétiques des parois de domaines multiferroïques dans BiFeO3


    Blouzon, Camille


    Among all multiferroics, BiFeO3 is a material of choice because its two ordering temperatures are well above 300K. It is a ferroelectric antiferromagnet, and magnetoelectric coupling has been demonstrated in bulk and in thin films. Remarkably, BiFeO3 has the largest polarization of all known ferroelectrics (100µC/cm²). A huge research effort is carried out worldwide to understand and exploit the physical properties of this material which requires to design and tailor BiFeO3 on many scales. In...

  4. Enhanced electrical properties in Ce3+ and V5+ co-doped multiferroic BiFeO3 films%Ce、V共掺杂BiFeO3多铁薄膜及其电性能研究

    Institute of Scientific and Technical Information of China (English)

    袁娜; 刘军; 刘文秋; 李美亚; 赵兴中


    Pure, Ce3+ and V5+ co-doped multiferroic BiFeO3 thin films, BiFeO3 (BFO) and Bi0.97 Ce0.03 Fe1-x Vx O3 (x = 0,0.01,0.02,0.03) (BCFVχ), were successfully prepared on Pt/Ti/SiO2/Si substrates by sol-gel technique.The structures and the surface morphologies measurements revealed a gradual phase transition from a rhombohedral to a pseudotetragonal structure and decreased grain sizes in the Ce and V co-doped BFO films. The dielectric property and leakage current density measurements indicated a large increase in the dielectric constanct and greatly decreases in the dielectric loss and the leakage current density in the Ce and V co-doped BFO films. Improved ferroelectric properties were obtained in the BCFVx films of x=0. 01 with a well squared-shaped P-E hysteresis loop.%采用sol-gel法在Pt/Ti/SiO2/Si衬底上成功制备出纯BiFeO3(BFO)和Ce、V共掺杂Bi0.97 Ce0.03Fe1-x VxO3 (x=0,0.01,0.02,0.03)(BCFVx)薄膜.结构和形貌测试表明,Ce、V共掺杂使得BFO薄膜发生从菱方结构到伪四方结构的转变,且薄膜晶粒变小.介电性能和漏电流测试表明,Ce、V共掺杂BFO薄膜的介电常数增大,介电损耗和漏电流密度减小.铁电性能测试表明在x=0.01时,BCFV0.01薄膜具有较好矩形度的电滞回线,表现出较好的铁电性能.

  5. Strain Effects of the Structural Characteristics of Ferroelectric Transition in Single-Domain Epitaxial BiFeO3 Films

    Institute of Scientific and Technical Information of China (English)

    LIU Yang; PENG Xing-Ping


    Structural characteristics of phase transition in single-domain epitaxial BiFeOz films are studied by the Landau-Devonshire theory. It is predicted that remanent polarization shows strong strain dependence for different temperatures while spontaneous polarization is almost independent of strain over a wide temperature (0-500 °C). We also obtain the thickness dependence of the c-axis lattice parameter and Curie temperature, and make a comparison between the polarization rotation angle and the angle attributed to the structural evolution in epitaxial (001)p BiFeOa h'lms grown on SrTiO3 substrates. The theoretical results are in agreement with recent experimental and theoretical data. Our calculations show that the clamping effect should also be taken into account in order to depict the mechanism of the polarization rotation completely.%@@ Structural characteristics of phase transition in single-domain epitaxial BiFeO films are studied by the Landau- Devonshire theory.It is predicted that remanent polarization shows strong strain dependence for different tem- peratures while spontaneous polarization is almost independent of strain over a wide temperature (0-500 ℃).We also obtain the thickness dependence of the c-axis lattice parameter and Curie temperature, and make a compari- son between the polarization rotation angle and the angle attributed to the structural evolution in epitaxial (001) BiFeO films grown on SrTiO substrates.The theoretical results are in agreement with recent experimental and theoretical data.Our calculations show that the damping effect should also be taken into account in order to depict the mechanism of the poIarization rotation completely.

  6. Structure and magnetic properties of spinel-perovskite nanocomposite thin films on SrTiO3 (111) substrates (United States)

    Kim, Dong Hun; Yang, Junho; Kim, Min Seok; Kim, Tae Cheol


    Epitaxial CoFe2O4-BiFeO3 nanocomposite thin films were synthesized on perovskite structured SrTiO3 (001) and (111) substrates by combinatorial pulsed laser deposition and characterized using scanning electron microscopy, x-ray diffraction, and vibrating sample magnetometer. Triangular BiFeO3 nanopillars were formed in a CoFe2O4 matrix on (111) oriented SrTiO3 substrates, while CoFe2O4 nanopillars with rectangular or square top surfaces grew in a BiFeO3 matrix on (001) substrates. The magnetic hysteresis loops of nanocomposites on (111) oriented SrTiO3 substrates showed isotropic properties due to the strain relaxation while those of films on SrTiO3 (001) substrates exhibited a strong out-of-plane anisotropy originated from shape and strain effects.

  7. Density relative change and interface zone mutual diffusion of BiFeO3 films prepared on Si (1 0 0), SiO2 and SiO2/Si (1 0 0) (United States)

    Xiao, RenZheng; Wang, ZeSong; Yuan, XianBao; Zhou, JianJun; Mao, ZhangLiang; Su, HuaShan; Li, Bo; Fu, DeJun


    The mutual diffusion taken place in the interface zone between BiFeO3 (BFO) films and substrates (Si (1 0 0), SiO2 and SiO2/Si (1 0 0)) has been revealed by energy dispersive X-ray spectroscopy (EDS) and Rutherford Backscattering Spectrometry (RBS). RBS spectra provide the relative atomic concentrations of Bi, Fe, Si, and O elements changed with the samples' depth as analyzed by RBS spectra fitting SIMNRA software. A certain width of the intermixing layer is probably formed between BFO films and individual substrate which is attributed to mutual diffusion in the interface zone during annealing process. The mechanism of concerted exchange component can explain the interface zone mutual diffusion phenomenon between BFO films and substrates. The width of the interface zone between BFO film and Si (1 0 0), SiO2, and SiO2/Si (1 0 0) substrate is about 1.94 × 1017, 2.01 × 1017 and 3.05 × 1017 atoms/cm2, respectively, which are equivalent to 30.9, 36.7, and 52.9 nm, respectively. It has been declared that the effect on density relative to BFO film is loosen or attenuation is presented in the interface zone, which can be interpreted as a migration or diffusion of various atoms during the annealing. This can also provide an evidence of atomic dynamics and defect engineering on interface diffusion.

  8. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level (United States)

    Vasudevan, R. K.; Bogle, K. A.; Kumar, A.; Jesse, S.; Magaraggia, R.; Stamps, R.; Ogale, S. B.; Potdar, H. S.; Nagarajan, V.


    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1-xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of ˜1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  9. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, Rama K [ORNL; Bogle, K A [University of New South Wales, Sydney, Australia; Kumar, Amit [ORNL; Jesse, Stephen [ORNL; Magaraggia, R [University of Glasgow; Stamps, R [University of Glasgow; Ogale, S [National Chemical Laboratory, India; Potdar, H S [National Chemical Laboratory, India


    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of 1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  10. Remarkably enhanced photovoltaic effects and first-principles calculations in neodymium doped BiFeO3 (United States)

    Peng, Yi-Ting; Chiou, Shan-Haw; Hsiao, Ching-Hung; (Hao) Ouyang, Chuenhou; Tu, Chi-Shun


    Remarkably enhanced photovoltaic effects have been observed in the heterostructures of p-type A-site Nd3+-doped BiFeO3 (Bi0.9375Nd0.0625)FeO3 (or BFONd) polycrystalline ceramics and the n-type ITO thin film. The maximum power conversion is ~0.82%, which is larger than 0.015% in BiFeO3 (BFO) under blue-ultraviolet irradiation of wavelength λ = 405 nm. The current-voltage (I-V) characteristic curve suggests a p-n junction interface between the ITO thin film and BFO (or BFONd) ceramics. The band gaps calculated from first-principles for BFO and BFONd are respectively 2.25 eV and 2.23 eV, which are consistent with the experimental direct band gaps of 2.24 eV and 2.20 eV measured by optical transmission spectra. The reduction of the band gap in BFONd can be explained by the lower electronic Fermi level due to acceptor states revealed by first-principles calculations. The optical calculations show a larger absorption coefficient in BFONd than in BFO. PMID:28337977

  11. Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 / YBa 2 Cu 3 O 7 bilayers

    KAUST Repository

    Springer, D.


    The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO3 (BFO) and superconducting YBa2Cu3O7 (YBCO) grown on a (001) SrTiO3 substrate is studied by a time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCO interface as observed in magnetization data. An extension of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.

  12. The origin of photovoltaic responses in BiFeO3 multiferroic ceramics. (United States)

    Tu, C-S; Hung, C-M; Schmidt, V H; Chien, R R; Jiang, M-D; Anthoninappen, J


    Multiferroic BiFeO(3) (BFO) ceramics with electrodes of indium tin oxide (ITO) and Au thin films exhibit significant photovoltaic effects under near-ultraviolet illumination (λ = 405 nm) and show strong dependences on light wavelength, illumination intensity, and sample thickness. The correlation between photovoltaic responses and illumination intensity can be attributed to photo-excited and thermally generated charge carriers in the interface depletion region between BFO ceramic and ITO thin film. A theoretical model is developed to describe the open-circuit photovoltage and short-circuit photocurrent density as a function of illumination intensity. This model can be applied to the photovoltaic effects in p-n junction type BFO thin films and other systems. The BFO ceramic exhibits stronger photovoltaic responses than the ferroelectric Pb(1-x)La(x)(Zr(y)Ti(1-y))(1-x/4)O(3) (PLZT) ceramics under near-ultraviolet illumination. Comparisons are made with other systems and models for the photovoltaic effect.

  13. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss


    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  14. Thin film processes II

    CERN Document Server

    Kern, Werner


    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  15. Pyrolyzed thin film carbon (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)


    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  16. Enhanced photovoltaic effect in BiVO4 semiconductor by incorporation with an ultrathin BiFeO3 ferroelectric layer. (United States)

    Dong, Wen; Guo, Yiping; Guo, Bing; Li, Hua; Liu, Hezhou; Joel, Thia Weikang


    The photovoltaic effect of BiVO4 semiconductor was investigated by incorporating an ultrathin BiFeO3 ferroelectric layer. It is found that the ultrathin ferroelectric layer with strong self-polarization and high carrier density is desirable to enhance the photovoltaic effect and to manipulate the photovoltaic polarity of the semiconductors. The photovoltage increases by 5-fold to 1 V, and the photocurrent density increases by 2-fold to 140 μA/cm(2), in which the photovoltage is the highest compared with the reported values in polycrystalline and epitaxial ferroelectric thin film solar cells. The mechanism for the observed effect is discussed on the basis of a polarization-induced Schottky-like barrier at the BiFeO3/fluorine doped tin oxide interface. Our work provides good guidance for fabrication of cost-effective semiconductor photovoltaic devices with high performance, and this kind of ultrathin ferroelectric film may also have promising applications in copper indium gallium selenide solar cell, dye-sensitized TiO2 solar cell, lighting emitting diode, and other photoelectron related devices.

  17. Pr and Gd co-doped bismuth ferrite thin films with enhanced multiferroic properties

    Indian Academy of Sciences (India)

    Chang Chun Chen; Zi Xuan Liu; Gui Wang; Yi Lin Yan


    Pr and Gd co-modified Bi0.95−PrGd0.05FeO3 ( = 0.00, 0.05, 0.10) (BPGFO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a sol-gel together with spin coating technique. A detailed study of electrical and magnetic properties of these thin films is reported. X-ray diffraction analysis shows that, with an increase in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. Polarization-electric field hysteresis loops of these thin films demonstrate that the incorporation of Pr and Gd into the Bi site of BiFeO3 thin film could enhance the ferroelectric performance. Compared to other thin films, the optimal ferroelectric behaviours in Bi0.85Pr0.1Gd0.05FeO3 thin film are ascribed to its large dielectric constant, low dissipation factor and low leakage current density. Room temperature magnetization-magnetic field curves of these thin films indicate that all the samples are of paramagnetic behaviours and the enhanced saturation magnetic properties can be found.

  18. Ceramic Composite Thin Films (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)


    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  19. Synthesis of BiFeO3 by carbonate precipitation

    Indian Academy of Sciences (India)

    V Kothai; Rajeev Ranjan


    Magnetoelectric multiferroic BiFeO3 (BFO) was synthesized by a simple carbonate precipitation technique of metal nitrate solutions. X-ray powder diffraction and thermo-gravimetric analysis (TGA) revealed that the precipitate consists of an intimate mixture of crystalline bismuth carbonate and an amorphous hydroxide of iron. The precipitate yielded BiFeO3 at an optimal calcination temperature of ∼560°C. Energy dispersive X-ray (EDX) analysis showed 1:1 ratio between Bi and Fe in the oxide. X-ray photoelectron spectroscopy (XPS) studies confirmed that Fe to be in +3 oxidation states both in the precipitated powder and BiFeO3. The synthesized BFO exhibits a very weak ferromagnetic correlation at room temperature and the degree of which increases slightly on cooling down to 10 K suggesting alteration in the long range spatial modulation of the spins arrangement as compared to the bulk BiFeO3.

  20. Thin Film & Deposition Systems (Windows) (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  1. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.


    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  2. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet


    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  3. Measurement of transient atomic displacements in thin films with picosecond and femtometer resolution

    Directory of Open Access Journals (Sweden)

    M. Kozina


    Full Text Available We report measurements of the transient structural response of weakly photo-excited thin films of BiFeO3, Pb(Zr,TiO3, and Bi and time-scales for interfacial thermal transport. Utilizing picosecond x-ray diffraction at a 1.28 MHz repetition rate with time resolution extending down to 15 ps, transient changes in the diffraction angle are recorded. These changes are associated with photo-induced lattice strains within nanolayer thin films, resolved at the part-per-million level, corresponding to a shift in the scattering angle three orders of magnitude smaller than the rocking curve width and changes in the interlayer lattice spacing of fractions of a femtometer. The combination of high brightness, repetition rate, and stability of the synchrotron, in conjunction with high time resolution, represents a novel means to probe atomic-scale, near-equilibrium dynamics.

  4. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.


    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  5. Size dependent structural, vibrational and magnetic properties of BiFeO3 and core-shell structured BiFeO3@SiO2 nanoparticles (United States)

    Chauhan, Sunil; Kumar, Manoj; Chhoker, Sandeep; Katyal, S. C.


    Bulk BiFeO3, BiFeO3 nanoparticles and core-shell structured BiFeO3@SiO2 nanoparticles were synthesized by solid state reaction method, sol-gel and Stöber process (SiO2 shell) respectively. Transmission electron microscopy image confirmed the core-shell structure of BiFeO3@SiO2 nanoparticles with BiFeO3 core ˜50-90 nm and SiO2 shell ˜16 nm. X-ray diffraction and FTIR spectroscopy results showed the presence of distorted rhombohedral structure with R3c space group in all three samples. The magnetic measurement indicated the existence of room-temperature weak ferromagnetism in core-shell BiFeO3@SiO2 nanoparticles and BiFeO3 nanoparticles, whereas bulk BiFeO3 showed antiferromagnteic nature. Electron Spin Resonance results confirmed the enhancement in magnetic properties of coreshell structured BiFeO3@SiO2 nanoparticles in comparison with BiFeO3 nanoparticles and bulk BiFeO3.

  6. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P


    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  7. Biomimetic thin film deposition (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.


    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  8. Thin film ceramic thermocouples (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)


    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  9. Thin films for material engineering (United States)

    Wasa, Kiyotaka


    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  10. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram


    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  11. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco


    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  12. NMR characterization of thin films (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela


    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  13. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others


    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  14. [Spectral emissivity of thin films]. (United States)

    Zhong, D


    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  15. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique (United States)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay


    Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol-gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au9+ ions at a fluence of 1 × 1012 ions cm-2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  16. Thin film superconductor magnetic bearings (United States)

    Weinberger, Bernard R.


    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  17. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)


    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  18. Chiral atomically thin films (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong


    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  19. Perovskite type nanopowders and thin films obtained by chemical methods

    Directory of Open Access Journals (Sweden)

    Viktor Fruth


    Full Text Available The review presents the contribution of the authors, to the preparation of two types of perovskites, namely BiFeO3 and LaCoO3, by innovative methods. The studied perovskites were obtained as powders, films and sintered bodies. Their complex structural and morphological characterization is also presented. The obtained results have underlined the important influence of the method of preparation on the properties of the synthesized perovskites.

  20. Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films. (United States)

    Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M


    Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

  1. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.


    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  2. Change in the magnetic structure of (Bi,SmFeO3 thin films at the morphotropic phase boundary probed by neutron diffraction

    Directory of Open Access Journals (Sweden)

    Shingo Maruyama


    Full Text Available We report on the evolution of the magnetic structure of BiFeO3 thin films grown on SrTiO3 substrates as a function of Sm doping. We determined the magnetic structure using neutron diffraction. We found that as Sm increases, the magnetic structure evolves from a cycloid to a G-type antiferromagnet at the morphotropic phase boundary, where there is a large piezoelectric response due to an electric-field induced structural transition. The occurrence of the magnetic structural transition at the morphotropic phase boundary offers another route towards room temperature multiferroic devices.

  3. Photoinduced magnetoresistance and magnetic-field-modulated photoelectric response in BiFeO3/Si heterojunctions (United States)

    Xi, Jianfeng; Ni, Hao; Zhao, Kun; Lu, Huibin; Guo, Erjia; He, Meng; Jin, Kuijuan; Zhou, Yueliang; Yang, Guozhen; Xiao, Lizhi; Zhang, Zhenwei


    The BiFeO3 film grown on Si substrate without template exhibits a diode-like effect, and the forward direction of the diode can be switched by external electric fields. The laser irradiation and the magnetic field can induce polarization, thus modulating the photovoltaic effect. The magnetoresistance values change from -1.19 to -5.79 and to -35.48 % dramatically under 50 μA current in 770 Oe when the junction is irradiated by 532 and 1064 nm lasers, respectively. These results reveal unusual and interesting charge conduction behavior in leaky ferroelectrics and should promote the study of BiFeO3 based on multifunctional materials.

  4. Thin film processes

    CERN Document Server

    Vossen, John L


    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  5. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut


    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  6. Thin film interconnect processes (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  7. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)


    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  8. Nonlinear optical thin films (United States)

    Leslie, Thomas M.


    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  9. Host thin films incorporating nanoparticles (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  10. Stress induced enhanced polarization in multilayer BiFeO3/BaTiO3 structure with improved energy storage properties

    Directory of Open Access Journals (Sweden)

    Savita Sharma


    Full Text Available Present work reports the fabrication of a multilayer (5-layer structure of BiFeO3(BFO/BaTiO3(BTO using spin-coating technique. The crystallographic structure, surface morphology and ferroelectric behavior of multilayer structure in metal-ferroelectric-metal capacitor have been studied. Le-Bail refinement of X-ray diffraction data revealed the formation of polycrystalline pure perovskite phase with induced stress. The values of remnant (Pr and saturation polarization (Ps for BFO/BTO multilayer structure are found to be 38.14 μC/cm2 and 71.54 μC/cm2 respectively, which are much higher than the corresponding values reported for bare BFO thin film. A large value of dielectric constant of 187 has been obtained for multilayer structure with a low leakage current density of 1.09 × 10−7 A/cm2 at applied bias of 10 V. The BFO/BTO multilayer structure favors the enhanced energy storage capacity as compared to bare BFO thin film with improved values of energy-density and charge-discharge efficiency as 121 mJ/cm3 and 59% respectively, suggesting futuristic energy storage applications.

  11. Thin Film Inorganic Electrochemical Systems. (United States)


    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  12. Polyimide Aerogel Thin Films (United States)

    Meador, Mary Ann; Guo, Haiquan


    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  13. Mecanosíntese do composto BiFeO3 Mechanosynthesis of the BiFeO3 compound

    Directory of Open Access Journals (Sweden)

    V. F. Freitas


    Full Text Available Os compostos cerâmicos BiFeO3 puro e modificado (Bi0,95R0,05FeO3, com terras raras R = Gd ou Eu, foram sintetizados por moagem em altas energias. As amostras foram analisadas por difração de raios X, microscopia eletrônica de varredura e espectroscopia por energia dispersiva de raios X. A difração de raios X indicou que as amostras modificadas com Eu são monofásicas, enquanto que as amostras puras e modificadas com Gd apresentaram majoritariamente a fase BiFeO3, com uma pequena quantidade de outras fases. A espectroscopia por energia dispersiva de raios X revelou a presença dos átomos modificantes na amostra e o mapeamento destes átomos indicou uma distribuição homogênea deles em toda a amostra. A microscopia eletrônica de varredura mostrou uma significante diminuição no tamanho das partículas, estando estas com dimensões sub-micrométricas e com diâmetro médio em torno de 500 nm. Estudos de densificação dos corpos cerâmicos indicaram compostos altamente densos, com densidades relativas acima de 0,9 sendo que o composto modificado com Eu alcançou a densidade relativa ρ/ρ0 = 0,98.The, pure and rare earth modified (Bi0.95R0.05FeO3 / R = Gd or Eu BiFeO3 compounds were synthesized by high-energy ball milling. The samples were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. The X-ray diffraction results indicated single phase Eu modified samples, while the pure and Gd modified ones presented the BiFeO3 as majority phase, and small amount of the spurious phase. The energy dispersive spectroscopy revealed the presence of the modifiers atoms in the sample and the mapping of these atoms indicated the homogeneous distribution of them in the whole samples. The scanning electron microscopy showed a decrease significant on the particle size, with medium diameter around 500 nm. Densification studies indicated high-dense ceramics body, with relative density above of 0.9, were Eu modified compound reached relative density ρ/ρ0 = 0.98.

  14. Anomalous sound velocity in multiferroic BiFeO3 (United States)

    Cao, Xian-Sheng; Ji, Gao-Feng; Jiang, Xing-Fang


    The sound velocity in multiferroic BiFeO3 (BFO) is studied with using Green's function technology on the basis of the magnetoelectric coupling, the spin-phonon interaction and the anharmonic phonon-phonon interaction. The Heisenberg-like model is employed to describe the magnetic subsystem, and the transverse Ising model is used to explain the ferroelectric subsystem. The reduced velocity is obtained in the limit of zero wave vectors. It is shown that the reduced velocity of sound in BiFeO3 exhibits a kink at the magnetic phase transition temperature TN. This anomaly in reduced velocity can be explained as an influence of vanishing magnetic ordering above TN and the ferroelectric subsystem can not be influenced by the magnetic subsystem above TN due to TN≪TC in the BFO. It is shown that the influence of the RM is only below TN in the phase where ferroelectric and magnetic properties exist together, whereas the RE influences the properties of the reduced velocity in the whole temperature region (T

  15. Surface functionalization of BiFeO3: A pathway for the enhancement of dielectric and electrical properties of poly(methyl methacrylate)-BiFeO3 composite films (United States)

    Mishra, Mukesh Kumar; Moharana, Srikanta; Behera, Banarji; Mahaling, Ram Naresh


    A novel two-phase composite film is prepared by the solvent casting method employing poly(methyl methacrylate) (PMMA) as polymer matrix and bismuth ferrite (BFO) as ceramic filler. The surfaces of BFO are functionalized by proper hydroxylating agents to activate their chemical nature. The structural analysis of the composite films confirms that the composites made up of functionalized BFO (BFO-OH) have a distorted rhombohedral structure. The morphological analysis shows that BFO-OH particles are equally distributed over the polymer matrix. The -OH functionality of BFO-OH is confirmed by FTIR. The dielectric and electrical studies at a frequency range from 100 Hz to 1 MHz reveal that PMMA-(BFO-OH) composites have enhanced dielectric constant as well as electrical conductivities, much higher than that of unmodified composites. According to the ferroelectric measurement result, the hydroxylated composite film shows a superior ferroelectric behavior than that of the unmodified one, with a remanent polarization (2 P r) of 2.764 μC/cm2.

  16. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.


    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  17. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G


    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  18. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.


    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  19. Thin Film Deposition Techniques (PVD) (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  20. Multiferroic, magnetoelectric and optical properties of Mn doped BiFeO3 nanoparticles (United States)

    Chauhan, Sunil; Kumar, Manoj; Chhoker, Sandeep; Katyal, S. C.; Singh, Hemant; Jewariya, Mukesh; Yadav, K. L.


    Mn doped BiFeO3 (5, 10 and 15 mol%) nanoparticles were synthesized using sol-gel technique. The influence of Mn doping on structural, dielectric, magnetic, magnetoelectric and optical properties of BiFeO3 was studied. Rietveld refinement of XRD patterns showed rhombohedral to orthorhombic phase transition for 15 mol% Mn doped BiFeO3 sample. Magnetic measurements revealed the enhancement of ferromagnetic property with increasing Mn doping in BiFeO3. The characteristic dielectric anomaly, expected in the vicinity of antiferromagnetic transition temperature TN (Neel temperature) was found in all Mn doped BiFeO3 samples. The magnetoelectric coupling was evidenced by the change in capacitance with the change in the applied magnetic field. On increasing Mn concentration from 5 to 15 mol% in BiFeO3, a change in magnetocapacitance from 1.46% to 2.6% showed the improvement of multiferroic properties. In order to explore the optical properties of Mn doped BiFeO3 nanoparticles, their photoluminescent properties were also investigated.

  1. One-dimensional BiFeO3 nanotubes: Preparation, characterization, improved magnetic behaviors, and prospects (United States)

    Wu, Lei; Sui, Wenbo; Dong, Chunhui; Zhang, Chao; Jiang, Changjun


    With the progress of science and technology, the growing demands for practical applications make low-dimensional multiferroics more appealing in areas such as chemical and bio-sensors, nanoelectronic, high-density data storage devices. One-dimensional BiFeO3 nanotubes were successfully synthesized by sol-gel-based electrospinning process. The images of scanning electron microscopy and transmission electron microscopy collectively demonstrate that BiFeO3 nanotubes with long slender structure and virtually uniform diameter of approximately 100 nm were observed at 500 °C annealing temperature. By compared with BiFeO3 bulks observed at 800 °C annealing temperature, enhanced room temperature ferromagnetism was successfully realized in BiFeO3 nanotubes at room temperature. The results of electron spin resonance measurement further confirm that ferromagnetic resonances were detected in BiFeO3 nanotubes at different temperature. X-ray photoelectron spectroscopy study proves the existence of plentiful oxygen vacancies in BiFeO3 nanotubes, which will play a key role in terms of enhanced ferromagnetism. The results will contribute to expand the applications of BiFeO3 into the new field of spintronic devices and high-density data storage media.

  2. Piezoelectric response of BiFeO3 ceramics at elevated temperatures (United States)

    Rojac, Tadej; Makarovic, Maja; Walker, Julian; Ursic, Hana; Damjanovic, Dragan; Kos, Tomaz


    The high Curie temperature (TC ˜ 825 °C) of BiFeO3 has made this material potentially attractive for the development of high-TC piezoelectric ceramics. Despite significant advances in the search of new BiFeO3-based compositions, the piezoelectric behavior of the parent BiFeO3 at elevated temperatures remains unexplored. We present here a systematic analysis of the converse, longitudinal piezoelectric response of BiFeO3 measured in situ as a function of temperature (25-260 °C), driving-field frequency, and amplitude. Earlier studies performed at room temperature revealed that the frequency and field dependence of the longitudinal response of BiFeO3 is dominated by linear and nonlinear piezoelectric Maxwell-Wagner mechanisms, originating from the presence of local conductive paths along domain walls and grain boundaries within the polycrystalline matrix. This study shows that the same mechanisms are responsible for the distinct temperature dependence of the piezoelectric coefficient and phase angle and thus identifies the local electrical conductivity as the key for controlling the temperature dependent piezoelectric response of BiFeO3 and possibly other, more complex BiFeO3-based compositions.

  3. Thin-film metal hydrides. (United States)

    Remhof, Arndt; Borgschulte, Andreas


    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  4. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu


    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  5. Drying of thin colloidal films (United States)

    Routh, Alexander F.


    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  6. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)


    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  7. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)


    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  8. Thin-film solar cell


    Metselaar, J.W.; Kuznetsov, V. I.


    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  9. Fabrication, Characterization, Properties, and Applications of Low-Dimensional BiFeO3 Nanostructures

    Directory of Open Access Journals (Sweden)

    Heng Wu


    Full Text Available Low-dimensional BiFeO3 nanostructures (e.g., nanocrystals, nanowires, nanotubes, and nanoislands have received considerable attention due to their novel size-dependent properties and outstanding multiferroic properties at room temperature. In recent years, much progress has been made both in fabrications and (microstructural, electrical, and magnetic in characterizations of BiFeO3 low-dimensional nanostructures. An overview of the state of art in BiFeO3 low-dimensional nanostructures is presented. First, we review the fabrications of high-quality BiFeO3 low-dimensional nanostructures via a variety of techniques, and then the structural characterizations and physical properties of the BiFeO3 low-dimensional nanostructures are summarized. Their potential applications in the next-generation magnetoelectric random access memories and photovoltaic devices are also discussed. Finally, we conclude this review by providing our perspectives to the future researches of BiFeO3 low-dimensional nanostructures and some key problems are also outlined.

  10. Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications (United States)

    Zhu, Jingbin; Yin, Zhigang; Fu, Zhen; Zhao, Yajuan; Zhang, Xingwang; Liu, Xin; You, Jingbi; Li, Xingxing; Meng, Junhua; Liu, Heng; Wu, Jinliang


    Ferroelectric field-effect transistor has long been considered as a promising nonvolatile memory technology, but its application is limited by the poor scalability. Here we show that this problem can be solved by epitaxially integrating tetragonal BiFeO3, a stress-induced metastable phase which exhibits remarkably low dielectric permittivity and high coercive field, on the silicon platform. Tetragonal BiFeO3 was stabilized on (001)-oriented silicon by using Bi2SiO5, which is chemically and structurally compatible with both silicon and tetragonal BiFeO3, as the buffer layer. Unlike the commonly observed MC structure, the obtained BiFeO3 layer exhibits a true tetragonal symmetry. An unprecedented high memory window of 6.5 V was observed for the Au/BiFeO3/Bi2SiO5/Si capacitor with BiFeO3 thickness of 135 nm. The epitaxial integration of tetragonal BiFeO3 with silicon may pave a possible avenue for nanosized, power-efficient ferroelectric nonvolatile memories.

  11. Induced modifications in the properties of Sr doped BiFeO3 multiferroics

    Institute of Scientific and Technical Information of China (English)

    Tanvir Hussain; Saadat A. Siddiqi; Shahid Atiq; M.S. Awan


    Multiferroics exhibit unique combination of ferroic properties, simultaneously. For instance, in BiFeO3, magnetic and electric properties co-exist. In this work, BiFeO3 and Sr-doped BiFeO3 samples with general formula, Bi1 ? xSrxFeO3 (x ¼ 0.00, 0.05, 0.10, 0.20, and 0.30) were synthesized by sol-gel auto-combustion technique, in order to investigate these ferroic properties. The samples were confirmed to have perovskite type rhombohedral structure, characteristic of BiFeO3. A dilute phase of Bi2Fe4O9 was also found in all the Sr-doped samples. The micrographs of the palletized samples revealed that minutely doped Sr might not have any effect on the morphology of the samples. Frequency dependent dielectric measurements were carried out at room temperature for all the samples from 100 Hz to 1 MHz. The dielectric constant of un-doped sample at low frequency was 52 which decreased with increasing Sr doping. An enhancement of magnetic properties was observed with increasing the Sr contents. Pure BiFeO3 material was observed to have the least value of remanent magnetization. As the Sr2þ ions were doped in BiFeO3, its magnetization and remanence were increased to 0.867 emu/g and 0.175 emu/g, respectively, at x ¼ 0.30.


    Directory of Open Access Journals (Sweden)



    Full Text Available The pure and Zn incorporated BiFeO3 ceramics were synthesized by self-propagating high temperature synthesis (SHS. The X-ray diffractometer (XRD studies revealed that, both BiFeO3 and BiFe0.95Zn0.05O3 ceramics crystallizes in a single phase rhombhohedral structure. The room temperature ferroelectric and magnetic hysteresis loop evidenced coexistence of ferroelectricity and magnetism in single phase undoped and Zn doped BiFeO3. The M-H hysteresis loop of BiFe0.95Zn0.05O3 sample demonstrated a weak ferromagnetism at 300 K and 5 K respectively. The room temperature ferroelectric P-E hysteresis loops of BiFeO3 and BiFe0.95Zn0.05O3 exhibited an unsaturated behavior and suggests a partial reversal of polarization. A variation of dielectric constant with respect to temperature in BiFeO3 and BiFe0.95Zn0.05O3 ceramic delivers a dielectric anomaly around 480 and 450°C which is a consequence of antiferromagnetic to paramagnetic phase transition (TN. Moreover, for BiFeO3 the anomaly manifests a possible coupling between electric and magnetic dipole moments.

  13. The Photovoltaic Properties of BiFeO3Lao.7Sro.3MnO3 Heterostructures

    Institute of Scientific and Technical Information of China (English)

    LUO Bing-Cheng; CHEN Chang-Le; FAN Fei; JIN Ke-Xin


    An epitaxial BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) multiferroic heterostructure is grown on an LaAlO3 (001) substrate by laser molecular beam epitaxy,and its photovoltaic properties are investigated.It is found that the photocurrent is significantly increased under illumination,and the short-circuit photocurrent has a linear relationship with the laser intensity.Furthermore,when the ferroelectric polarization of the BFO layer is switched,the short-circuit photocurrent and open-circuit voltage can be switched.These results are discussed by considering the contributions from the ferroelectric polarization and the electrode/film interface.%An epitaxial BifeO3/La0.7Sr0.3Mno3 (BFO/LSMO) multiferroic heterostructure is grown on an LaAIO3. Substrate by laser molecular beam epitaxy, and its photovoltaic properties are investigated. It is found that the photocurrent is significantly increased under illumination, and the short-circuit photocurrent has a linear relationship with the laser intensity. Furthermore, when the ferroelectric polarization of the BFO layer is switched, the short-circuit photocurrent and open-circuit voltage can be switched. These results are discussed by considering the contributions from the ferroelectric polarization and the electrode/rim interface.

  14. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P


    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  15. Ferroelectric Thin Film Development (United States)


    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  16. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh


    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  17. Enhancement of switching speed of BiFeO3 capacitors by magnetic fields

    Directory of Open Access Journals (Sweden)

    E. J. Guo


    Full Text Available The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO capacitors with La0.8Ca0.2MnO3 (LCMO bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coercive field on the magnetic field. The switching time can be systematically tuned by magnetic field and reaches a tenfold reduction around the Curie temperature of LCMO at 4 T. We attribute this behavior to the splitting of the voltage drops across the BFO film and the LCMO bottom electrode, which can be strongly influenced by an external magnetic field due to the magnetoresistance. Further experiments on the BFO capacitors with SrRuO3 bottom electrodes show little magnetic field dependence of ferroelectric switching confirming our interpretation. Our results provide an efficient route to control the ferroelectric switching speed through the magnetic field, implying potential application in multifunctional devices.

  18. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)


    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  19. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim


    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  20. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics


    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  1. Photoconductivity of thin organic films (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge


    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  2. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)


    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  3. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)


    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  4. Selective epitaxial growth for YBCO thin films

    NARCIS (Netherlands)

    Damen, C.A.J.; Smilde, H.-J.H.; Blank, D.H.A.; Rogalla, H.


    A novel selective epitaxial growth (SEG) technique for (YBCO) thin films is presented. The method involves the deposition of a thin (about 10 nm) metal layer, in the desired pattern, on a substrate before the deposition of the superconducting thin film. During growth the metal reacts with the YBCO,

  5. Structure, synthesis and multiferroic nature of BiFeO3 and 0.9BiFeO3–0.1BaTiO3: An overview

    Indian Academy of Sciences (India)

    Dhananjai Pandey; Anar Singh


    A brief review of the crystal structure and multiferroic nature of pure BiFeO3 and 0.9BiFeO3–0.1BaTiO3 (BF–0.1BT) is presented. An atomic level evidence for magnetoelectric coupling of intrinsic multiferroic origin in BF–0.1BT is presented.

  6. Size effect study in magnetoelectric BiFeO3 system

    Indian Academy of Sciences (India)

    Shwetha Shetty; V R Palkar; R Pinto


    In this paper, we report for the first time finite size effects on Néel temperature (N) of magnetoelectric BiFeO3 system. Novel wet chemical route has been developed to produce fine particles of BiFeO3 with controlled size and size distribution. Unlike other oxide systems, lattice volume contraction has been observed with decrease in particle size. The decrease in N is co-related to unit cell volume contraction occurring with reduction in particle size.

  7. Resistive memory effects in BiFeO3 single crystals controlled by transverse electric fields (United States)

    Kawachi, S.; Kuroe, H.; Ito, T.; Miyake, A.; Tokunaga, M.


    The effects of electric fields perpendicular to the c-axis of the trigonal cell in single crystals of BiFeO3 are investigated through magnetization and resistance measurements. Magnetization and resistance exhibit hysteretic changes under applied electric fields, which can be ascribed to the reorientation of the magnetoelectric domains. Samples are repetitively switched between high- and low-resistance states by changing the polarity of the applied electric fields over 20 000 cycles at room temperature. These results demonstrate the potential of BiFeO3 for use in non-volatile memory devices.

  8. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H


    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  9. Thin film fuel cell electrodes. (United States)

    Asher, W. J.; Batzold, J. S.


    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  10. p-i-n heterojunctions with BiFeO3 perovskite nanoparticles and p- and n-type oxides: photovoltaic properties. (United States)

    Chatterjee, Soumyo; Bera, Abhijit; Pal, Amlan J


    We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials.

  11. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf


    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  12. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman


    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  13. Electrostatic thin film chemical and biological sensor (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.


    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  14. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.


    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  15. Local Weak Ferromagnetism in Single-Crystalline Ferroelectric BiFeO3

    DEFF Research Database (Denmark)

    Ramazanoglu, M.; Laver, Mark; Ratcliff, W.;


    Polarized small-angle neutron scattering studies of single-crystalline multiferroic BiFeO3 reveal a long-wavelength spin density wave generated by ∼1° spin canting of the spins out of the rotation plane of the antiferromagnetic cycloidal order. This signifies weak ferromagnetism within mesoscopic...

  16. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))


    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  17. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)


    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  18. Magnetostrictive thin films for microwave spintronics. (United States)

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W


    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  19. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam


    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  20. Carbon nanotube based transparent conductive thin films. (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T


    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.


    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen


    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  2. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)


    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  3. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J


    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  4. Thin film bioreactors in space (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  5. Thin film bioreactors in space (United States)

    Hughes-Fulford, M.; Scheld, H. W.


    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  6. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet


    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  7. Micromotors using magnetostrictive thin films (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe


    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  8. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo


    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  9. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano


    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  10. Interfacial Effects on Pentablock Ionomer Thin Films (United States)

    Etampawala, Thusitha; Ratnaweera, Dilru; Osti, Naresh; Shrestha, Umesh; Perahia, Dvora; Majewski, Jaroslaw


    The interfacial behavior of multi block copolymer thin films results from a delicate balance between inherent phase segregation due to incompatibility of the blocks and the interactions of the individual blocks with the interfaces. Here in we report a study of thin films of ABCBA penta block copolymers, anionically synthesized, comprising of centered randomly sulfonated polystyrene block to which rubbery poly-ethylenebutalene is connected, terminated by blocks of poly-t-butylstyrene, kindly provided by Kraton. AFM and neutron reflectometry studies have shown that the surface structure of pristine films depends on film thickness and ranges from trapped micelles to thin layered films. Annealing above Tg for the styrene block results in rearrangements into relatively featureless air interface. Neutron reflectivity studies have shown that annealed films forms layers whose plane are parallel to the solid substrate with the bulky block at the air interface and the ionic block at the solid interface.

  11. Anisotropic Heisenberg model in thin film geometry

    Energy Technology Data Exchange (ETDEWEB)

    Akıncı, Ümit


    The effect of the anisotropy in the exchange interaction on the phase diagrams and magnetization behavior of the Heisenberg thin film has been investigated with effective field formulation in a two spin cluster using the decoupling approximation. Phase diagrams and magnetization behaviors have been obtained for several different cases, by grouping the systems in accordance with, whether the surfaces/interior of the film has anisotropic exchange interaction or not. - Highlights: • Phase diagrams of the anisotropic Heisenberg model on the thin film obtained • Dependence of the critical properties on the film thickness obtained • Effect of the anisotropy on the magnetic properties obtained.

  12. Insect thin films as solar collectors. (United States)

    Heilman, B D; Miaoulis, L N


    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  13. Ferromagnetic properties of fcc Gd thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bertelli, T. P., E-mail:; Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y. [Universidade Federal do Espírito Santo, Departamento de Física, Vitória/ES 29075-910 (Brazil); Pessoa, M. S. [Universidade Federal do Espírito Santo, Departamento de Ciências Naturais, São Mateus/ES 29932-540 (Brazil)


    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  14. Gd-doped BiFeO3 nanoparticles - A novel material for highly efficient dye-sensitized solar cells (United States)

    Lotey, Gurmeet Singh; Verma, N. K.


    This communication reports a novel idea on dye-sensitized solar cells (DSSCs) fabricated using Gd-doped BiFeO3 nanoparticles with particle size between 26 and 30 nm. The effect of Gd-doping and smaller size of synthesized nanoparticles on the structural, morphological, optical and photo-electrochemical properties have been investigated. The high energy-conversion efficiency, 3.85%, has been achieved for 12% Gd-doped BiFeO3 DSSCs, which is more than 100% higher than the undoped BiFeO3. The possible origin of the observed performance of DSSCs has been explained on the basis of smaller size of the synthesized nanoparticles, doping of Gd and structural transformation with doping in BiFeO3.

  15. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail:; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)


    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  16. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)


    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  17. Manganese ferrite thin films Part II: Properties

    NARCIS (Netherlands)

    Hulscher, W.S.


    Some properties of evaporated manganese ferrite thin films are investigated, e.g. resistivity, magnetization reversal, Curie temperature, Faraday rotation and optical absorption. The properties are partly related to the partial oxygen pressure present during a preceding annealing process.

  18. Templated assembly of BiFeO3 nanocrystals into 3D mesoporous networks for catalytic applications (United States)

    Papadas, I. T.; Subrahmanyam, K. S.; Kanatzidis, M. G.; Armatas, G. S.


    The self-assembly of uniform nanocrystals into large porous architectures is currently of immense interest for nanochemistry and nanotechnology. These materials combine the respective advantages of discrete nanoparticles and mesoporous structures. In this article, we demonstrate a facile nanoparticle templating process to synthesize a three-dimensional mesoporous BiFeO3 material. This approach involves the polymer-assisted aggregating assembly of 3-aminopropanoic acid-stabilized bismuth ferrite (BiFeO3) nanocrystals followed by thermal decomposition of the surfactant. The resulting material consists of a network of tightly connected BiFeO3 nanoparticles (~6-7 nm in diameter) and has a moderately high surface area (62 m2 g-1) and uniform pores (ca. 6.3 nm). As a result of the unique mesostructure, the porous assemblies of BiFeO3 nanoparticles show an excellent catalytic activity and chemical stability for the reduction of p-nitrophenol to p-aminophenol with NaBH4.The self-assembly of uniform nanocrystals into large porous architectures is currently of immense interest for nanochemistry and nanotechnology. These materials combine the respective advantages of discrete nanoparticles and mesoporous structures. In this article, we demonstrate a facile nanoparticle templating process to synthesize a three-dimensional mesoporous BiFeO3 material. This approach involves the polymer-assisted aggregating assembly of 3-aminopropanoic acid-stabilized bismuth ferrite (BiFeO3) nanocrystals followed by thermal decomposition of the surfactant. The resulting material consists of a network of tightly connected BiFeO3 nanoparticles (~6-7 nm in diameter) and has a moderately high surface area (62 m2 g-1) and uniform pores (ca. 6.3 nm). As a result of the unique mesostructure, the porous assemblies of BiFeO3 nanoparticles show an excellent catalytic activity and chemical stability for the reduction of p-nitrophenol to p-aminophenol with NaBH4. Electronic supplementary information (ESI) available: IR spectra and TG profiles of as-made BiFeO3 NPs and MBFA samples, TEM images of 3-APA-capped BiFeO3 NPs, EDS spectrum of MBFAs, N2 adsorption-desorption isotherms of randomly aggregated BiFeO3 NPs and catalytic data for 4-NP reduction by MBFAs and other nanostructured catalysts. See DOI: 10.1039/c5nr00185d

  19. Thin solid-lubricant films in space (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  20. Evolution of the antiferromagnetism vector of a multiferroic BiFeO3 during switching its ferroelectric polarization (United States)

    Berzin, A. A.; Vinokurov, D. L.; Morosov, A. I.


    The evolution of the antiferromagnetism vector of multiferroic BiFeO3 during switching of its ferroelectric polarization by an electric field has been studied by numerical simulation in the framework of the phenomenological model for the magnetic anisotropy energy. Optimal variants have been found for the cut of electrosensitive BiFeO3 layer, the deformation induced by a substrate, and the direction of applying electric field for the development of prototypes of new-generation marnetoresistive memory.

  1. Studies in thin film flows

    CERN Document Server

    McKinley, I S


    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  2. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten


    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  3. Synthesis and characterization of Bi{sub 1−x}Nd{sub x}FeO{sub 3} thin films deposited using a high throughput physical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Darby, M.S.B., E-mail: [Department of Materials, Science and Engineering, University of Sheffield, Sheffield, S1 3JD (United Kingdom); Karpinsky, D.V. [Complexo de Laboratórios Tecnológicos, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Pokorny, J. [Department of Materials, Science and Engineering, University of Sheffield, Sheffield, S1 3JD (United Kingdom); Institute of Physics, Academy of Sciences of the Czech Republic, 182 21 Prague (Czech Republic); Guerin, S. [Ilika Technologies Limited, Kenneth Dibben House, Enterprise Road, University of Southampton Science Park, Chilworth, Southampton, SO16 7NS (United Kingdom); Kholkin, A.L. [Complexo de Laboratórios Tecnológicos, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Miao, S. [Department of Materials, Science and Engineering, University of Sheffield, Sheffield, S1 3JD (United Kingdom); Hayden, B.E. [Ilika Technologies Limited, Kenneth Dibben House, Enterprise Road, University of Southampton Science Park, Chilworth, Southampton, SO16 7NS (United Kingdom); Reaney, I.M. [Department of Materials, Science and Engineering, University of Sheffield, Sheffield, S1 3JD (United Kingdom)


    The high throughput synthesis of BiFeO{sub 3} and rare earth doped BiFeO{sub 3} films using a modified molecular beam epitaxy technique is reported. Optimum conditions for deposition have been established and compositionally graded Bi{sub (1−x)}Nd{sub x}FeO{sub 3} (x = 0.08 to 0.24) thin films have been fabricated on platinised silicon substrate (Si/SiO{sub 2}/TiO{sub 2}/Pt) with the aim of finding the optimum Nd dopant concentrations for enhanced piezoelectric properties. For x < 0.12, the structure and symmetry were identical to that of the R3c BiFeO{sub 3} end member. For x > 0.20, the structure and symmetry were consistent with the NdFeO{sub 3} end member (Pnma). For compositions 0.12 < x < 0.2, a gradual transition from R3c to Pnma was observed via a mixed phase region but no compositional interval could be unambiguously identified in which the intermediate PbZrO{sub 3}-like structure, reported by Karimi et al. (2009) [6], existed as a single phase. Piezoresponse force microscopy remanent hysteresis measurements of the film revealed a statistical increase in the piezoelectric response at x ≈ 0.11 within the R3c region adjacent to the mixed phase field. - Highlights: ► High throughput synthesis and characterization of BiFeO3 and Nd-doped BiFeO3 films ► The piezoelectric properties of compositionally graded bismuth ferrite are studied. ► The structure and phase assemblage of Nd-doped bismuth ferrite have been studied.

  4. Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces (United States)

    Zhu, Jian-Xin; Wen, Xiao-Dong; Haraldsen, J. T.; He, Mi; Panagopoulos, C.; Chia, Elbert E. M.


    Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO3/YBa2Cu3O7 interfaces. By comparing the total energy for various magnetic spin configurations inside BiFeO3, we are able to show that a metallic ferromagnetism is induced near the interface. We further develop an interface exchange-coupling model and place the extracted exchange coupling interaction strengths, from the first-principles calculations, into a resultant generic phase diagram. Our conclusion of interfacial ferromagnetism is confirmed by the presence of a hysteresis loop in field-dependent magnetization data. The emergence of interfacial ferromagnetism should have implications to electronic and transport properties.

  5. Carbon Nanotube Thin-Film Antennas. (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J


    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  6. Electric Field Control of Magnetism Using BiFeO3-Based Heterostructures (United States)


    measured . Taking an angular set of magnetic hysteresis loops, the evolution of the systems magnetic anisotropy after the application of an electric...vacancies,63 and domain walls.64 Exchange bias is not the only manifesta- tion of exchange coupling observable in a magnetic hysteresis loop; the coercive...3. Depiction of the exchange coupling observed in the ferromagnetic permalloy (Py)/(001) BiFeO3 crystal. (a) and (b) A magnetic hysteresis loop

  7. Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces


    Zhu, Jian-Xin; WEN, XIAO-DONG; Haraldsen, J. T.; He, Mi; C. Panagopoulos; Chia, Elbert E. M.


    Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO3/YBa2Cu3O7 interfaces. By comparing the total energy for various magnetic spin configurations inside BiFe...

  8. Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon. (United States)

    Liang, Wen-I; Peng, Chun-Yen; Huang, Rong; Kuo, Wei-Cheng; Huang, Yen-Chin; Adamo, Carolina; Chen, Yi-Chun; Chang, Li; Juang, Jenh-Yih; Schlom, Darrel G; Chu, Ying-Hao


    The successful integration of the strain-driven nanoscale phase boundary of BiFeO3 onto a silicon substrate is demonstrated with extraordinary ferroelectricity and ferromagnetism. The detailed strain history is delineated through a reciprocal space mapping technique. We have found that a distorted monoclinic phase forms prior to a tetragonal-like phase, a phenomenon which may correlates with the thermal strain induced during the growth process.

  9. Photophysical properties of Alq3 thin films (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.


    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  10. Size dependent magnetic and electrical properties of Ba-doped nanocrystalline BiFeO3

    Directory of Open Access Journals (Sweden)

    Mehedi Hasan


    Full Text Available Improvement in magnetic and electrical properties of multiferroic BiFeO3 in conjunction with their dependence on particle size is crucial due to its potential applications in multifunctional miniaturized devices. In this investigation, we report a study on particle size dependent structural, magnetic and electrical properties of sol-gel derived Bi0.9Ba0.1FeO3 nanoparticles of different sizes ranging from ∼ 12 to 49 nm. The substitution of Bi by Ba significantly suppresses oxygen vacancies, reduces leakage current density and Fe2+ state. An improvement in both magnetic and electrical properties is observed for 10 % Ba-doped BiFeO3 nanoparticles compared to its undoped counterpart. The saturation magnetization of Bi0.9Ba0.1FeO3 nanoparticles increase with reducing particle size in contrast with a decreasing trend of ferroelectric polarization. Moreover, a first order metamagnetic transition is noticed for ∼ 49 nm Bi0.9Ba0.1FeO3 nanoparticles which disappeared with decreasing particle size. The observed strong size dependent multiferroic properties are attributed to the complex interaction between vacancy induced crystallographic defects, multiple valence states of Fe, uncompensated surface spins, crystallographic distortion and suppression of spiral spin cycloid of BiFeO3.

  11. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf


    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  12. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk


    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  13. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.


    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  14. Adhesion and friction of thin metal films (United States)

    Buckley, D. H.


    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  15. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)


    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  16. NLO properties of functionalized DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Oksana [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)], E-mail:; El-ghayoury, Abdelkrim [University d' Angers, UFR Sciences, Laboratoire CIMMA UMR CNRS 6200, 2 Bd. Lavoisier, 49045 (France); Rau, Ileana; Sahraoui, Bouchta [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France); Grote, James G. [Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, 3005 Hobson Way, Dayton, OH 45433-7707 (United States); Kajzar, Francois [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)


    In this paper we investigate the third-order nonlinear optical properties of spin deposited thin films of DNA-based complexes using the optical third harmonic generation (THG) technique at a fundamental wavelength of 1064 nm. We found that the third-order susceptibility, {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}), of DNA-based films was about one order of magnitude larger than that of our reference, a pure silica slab. In thin films doped with 5% of the chromophore disperse red 1 (DR1), a two order of magnitude larger value of {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}) was observed.

  17. Thin Ice Films at Mineral Surfaces. (United States)

    Yeşilbaş, Merve; Boily, Jean-François


    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  18. Carrier lifetimes in thin-film photovoltaics (United States)

    Baek, Dohyun


    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  19. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye


    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  20. Magnetoelectric thin film composites with interdigital electrodes (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.


    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  1. Tungsten-doped thin film materials (United States)

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.


    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  2. MOF thin films: existing and future applications. (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch


    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  3. Sprayed lanthanum doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)


    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  4. Sprayed lanthanum doped zinc oxide thin films (United States)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.


    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  5. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue


    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  6. Magnetowetting of Ferrofluidic Thin Liquid Films (United States)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando


    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  7. Optical Constants of Cadmium Telluride Thin Film (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.


    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  8. Pulsed laser deposition of ferroelectric thin films (United States)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.


    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  9. Photoluminescence Study of Copper Selenide Thin Films (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.


    Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

  10. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham


    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  11. Thin film calorimetry of polymer films (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William


    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  12. Vibration welding system with thin film sensor (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou


    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  13. Nanostructured thin films and coatings mechanical properties

    CERN Document Server


    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  14. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan


    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  15. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON


    A solar panel is which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  16. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan


    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  17. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans


    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  18. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans


    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  19. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail:


    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  20. Capillary instabilities in thin films. I. Energetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.


    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  1. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka


    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  2. Magnetite thin films: A simulational approach

    Energy Technology Data Exchange (ETDEWEB)

    Mazo-Zuluaga, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)]. E-mail:; Restrepo, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)


    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent {nu}=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed.

  3. Thin Film Electrodes for Rare Event Detectors (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer


    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  4. Environmentally stable sputter-deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, D.J.


    Accelerated corrosion data are presented for the titanium-silver and chrome-gold thin film metallization systems presently used at Sandia Laboratories. Improvements in corrosion, hence reliability, as a result of interposing a thin intermediate layer of either platinum or palladium are shown. Potentiometric measurements showing the alteration of corrosion potential with the use of palladium for the titanium-silver system are also presented.

  5. Micro-sensor thin-film anemometer (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)


    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  6. Feasibility Study of Thin Film Thermocouple Piles (United States)

    Sisk, R. C.


    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  7. Emittance Theory for Thin Film Selective Emitter (United States)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.


    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  8. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M


    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  9. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)


    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  10. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.


    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  11. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon


    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  12. Perovskite thin films via atomic layer deposition. (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H


    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  13. Critical exponents for isosymmetric phase transitions in BiFeO3 (United States)

    Scott, J. F.


    Recent studies of BiFeO3 have revealed two first-order phase transitions that do not change symmetry (Pbnm-Pbnm at approx. 1200 K and Cc-Cc under uniaxial stress). Twenty years ago Ishibashi and Hidaka (1991 J. Phys. Soc. Japan 60 1634) showed that such systems generally exhibit a phase diagram with tricritical points and critical end points and gave the unusual mean-field critical exponents α = 2/3, β = 1/3 and γ = 2/3 at the end points. In the present paper I extend that to show δ = 3, ν = 1/3 and η = 0 and suggest some experimental tests.

  14. Removing lignin model pollutants with BiFeO3-g-C3N4 compound as an efficient visible-light-heterogeneous Fenton-like catalyst. (United States)

    An, Junjian; Zhang, Guangyan; Zheng, Rongfeng; Wang, Peng


    BiFeO3-g-C3N4 nanoscaled composite was prepared with a hydrothermal method and evaluated as a highly efficient photo-Fenton like catalyst under visible light irradiation. The BiFeO3-g-C3N4 composite exhibited much stronger adsorption ability to lignin model pollutant (guaiacol) than that of BiFeO3, which may be due to the higher specific surface area (BiFeO3-g-C3N4: 35.59m(2)/g>BiFeO3: 7.42m(2)/g) and the adsorption form of π-π stack between g-C3N4 and guaiacol. The composite exhibited excellent visible light-Fenton like catalysis activity, being influenced by the solution pH value and the proportions of BiFeO3 and g-C3N4 nanosheets. Under optimal conditions with visible light irradiation, the BiFeO3-g-C3N4 composite yielded fast degradation of guaiacol with an apparent rate constant of 0.0452min(-1), which were 5.21 and 6.80 folds of that achieved by using BiFeO3 and the mixture of BiFeO3 and g-C3N4 nanosheets, respectively. The significantly enhanced visible light-Fenton like catalytic properties of the BiFeO3-g-C3N4 composite in comparison with that of BiFeO3 was attributed to a large surface area, much increased adsorption capacity and the semiconductor coupling effect between BiFeO3 and g-C3N4 in the composite.

  15. Workshop on thin film thermal conductivity measurements (United States)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.


    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  16. Influence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications (United States)

    Pi-Chun Juan, Trevor; Liu, Yu-Wei


    Metal-ferroelectric (Ti-substituted BiFeO3)-insulator (HfO2)-semiconductor structures have been fabricated via the cosputtering technique. Ti4+ substitution at the Fe site was investigated through x-ray photoelectron spectra and x-ray diffraction patterns at postannealing temperatures of 500 to 700 °C. The capacitance-voltage memory windows as functions of the insulator film thickness and the dc power for Ti were measured and compared. A memory window of 3.1 V was obtained at a sweep voltage of 8 V under O2-rich conditions. The leakage current and the charge injection effect, especially gate injection, can be greatly improved by Ti substitution. The effects of the postannealing temperature and the substitution amount on the leakage current can be well explained by the defect reaction model.

  17. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S


    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  18. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)


    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Study of iron mononitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil, E-mail:; Gupta, Mukul, E-mail:; Phase, D. M., E-mail:; Reddy, V. R., E-mail:; Gupta, Ajay, E-mail: [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore,-452001 (India)


    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  20. Epitaxy of layered semiconductor thin films (United States)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.


    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  1. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Frances


    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  2. Thin films for micro solid oxide fuel cells (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  3. Correlated dewetting patterns in thin polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Neto, Chiara [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Jacobs, Karin [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Seemann, Ralf [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Blossey, Ralf [Centre for Bioinformatics, Saarland University, PO Box 151150, D-66041 Saarbruecken (Germany); Becker, Juergen [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany); Gruen, Guenther [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany)


    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  4. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G


    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  5. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji


    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  6. Ternary compound thin film solar cells (United States)

    Kazmerski, L. L.


    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  7. Coherent x-ray diffraction imaging of photo-induced structural changes in BiFeO3 nanocrystals (United States)

    Newton, Marcus C.; Parsons, Aaron; Wagner, Ulrich; Rau, Christoph


    Multiferroic materials that exhibit coupling between ferroelectric and magnetic properties are of considerable utility for technological applications and are also interesting from a fundamental standpoint. When reduced to the nanoscale, multiferroic materials often display additional functionality that is dominated by interfacial and confinement effects. Bismuth ferrite (BiFeO3) is one such material with room temperature anti-ferromagnetic and ferroelectric ordering. Optical excitation of BiFeO3 crystals results in an elastic structural deformation of the lattice with a fast response on the pico-second time scale. Here we report on dynamic measurements to investigate the structural properties of BiFeO3 nanoscale crystals using laser excitation and three-dimensional Bragg coherent x-ray diffraction imaging. Tensile strain beyond 8 × {10}-2 was observed predominantly at the surface of the nanoscale crystal as evidenced in the reconstructed phase information and was correlated to photo-induced lattice deformation.

  8. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)


    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  9. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager;


    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  10. Bauschinger effect in unpassivated freestanding thin films

    NARCIS (Netherlands)

    Shishvan, S.S.; Nicola, L.; Van der Giessen, E.


    Two-dimensional (2D) discrete dislocation plasticity simulations are carried out to investigate the Bauschinger effect (BE) in freestanding thin films. The BE in plastic flow of polycrystalline materials is generally understood to be caused by inhomogeneous deformation during loading, leading to res

  11. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)


    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  12. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael


    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  13. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.


    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials scie

  14. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.


    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance char

  15. Welding Wires To Thin Thermocouple Films (United States)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary


    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  16. Quasifree Mg–H thin films

    NARCIS (Netherlands)

    Baldi, A.; Palmisano, V.; Gonzalez-Silveira, M.; Pivak, Y.; Slaman, M.; Schreuders, H.; Dam, B.; Griessen, R.


    The thermodynamics of hydrogen absorption in Pd-capped Mg films are strongly dependent on the magnesium thickness. In the present work, we suppress such dependency by inserting a thin Ti layer between Mg and Pd. By means of optical measurements, we show that the surface energy contribution to the de

  17. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.


    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and prem

  18. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.


    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic inst

  19. Intelligent Processing of Ferroelectric Thin Films (United States)


    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  20. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬


    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  1. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore


    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  2. Thin-Film Solid Oxide Fuel Cells (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex


    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  3. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa


    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  4. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.


    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  5. Surface roughness evolution of nanocomposite thin films

    NARCIS (Netherlands)

    Turkin, A; Pei, Y.T.; Shaha, K.P.; Chen, C.Q.; Vainchtein, David; Hosson, J.Th.M. De


    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growin

  6. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R


    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  7. Nonlocal thin films in calculations of the Casimir force

    NARCIS (Netherlands)

    Esquivel-Sirvent, R.; Svetovoy, V.B.


    The Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than th

  8. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, F.


    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  9. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films



    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  10. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu


    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  11. Magnetic and ferroelectric characteristics of Gd$^{3+}$ and Ti$^{4+}$ co-doped BiFeO$_3$ ceramics

    Indian Academy of Sciences (India)



    Polycrystalline BiFeO3 and Bi$_{0.9}$Gd$_{0.1}$Fe$_{1−x}$Ti$_x$O$_3$ ($x = 0$, 0.01, 0.05 and 0.1) samples were synthesized by solid-state reaction route. Structural, magnetic and ferroelectric properties of these samples were investigated. X-ray powder diffraction (XRD) results confirmed the presence of a significant amount of Bi$_2$Fe$_4$O$_9$ impurity phase in the undoped BiFeO$_3$ sample. Mössbauer spectroscopy studies corroborated the XRD studies to confirm the presence of impurity phase.We have observed that gadolinium (Gd$^{3+}$) and titanium (Ti$^{4+}$) doping, respectively, on Bi$^{3+}$ and Fe$^{3+}$ sites facilitated a significant reduction in the impurity phase formation in BiFeO$_3$. Interestingly, Gd$^{3+}$-doping significantly reduced the impurity phase formation as compared to the undoped BiFeO$_3$ sample. This impurity phase formation was further overcome by doping higher ($x \\ge 0.05$) amounts of Ti in BiFeO$_3$. The crystallographicsite occupancies of Gd and Ti were confirmed by Rietveld refinement of XRD data,Mössbauer spectroscopy and magnetization measurements. An enhancement in ferromagnetic properties along with moderate ferroelectricproperties have been observed after co-doping. There was an increasing trend in remnant polarization (Pr) with the increase in Ti concentration besides an improvement in the characteristic saturation magnetization. Our resultsdemonstrate that Gd$^{3+}$ and Ti$^{4+}$ doping could be used to enhance multifunctional properties of BiFeO3 ceramics to enable them as potential material for various devices.

  12. MISSE 5 Thin Films Space Exposure Experiment (United States)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.


    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  13. Structural and Ferroic Properties of La, Nd, and Dy Doped BiFeO3 Ceramics

    Directory of Open Access Journals (Sweden)

    Ashwini Kumar


    Full Text Available Polycrystalline samples of Bi0.8RE0.2FeO3 (RE = La, Nd, and Dy have been synthesized by solid-state reaction route. X-ray diffraction (XRD patterns of Bi0.8La0.2FeO3 and Bi0.8Nd0.2FeO3 were indexed in rhombohedral (R3c and triclinic (P1 structure, respectively. Rietveld refined XRD pattern of Bi0.8Dy0.2FeO3 confirms the biphasic (Pnma + R3c space groups nature. Raman spectroscopy reveals the change in BiFeO3 mode positions and supplements structural change with RE ion substitution. Ferroelectric and ferromagnetic loops have been observed in the Bi0.8RE0.2FeO3 ceramics at room temperature, indicating that ferroelectric and ferromagnetic ordering coexist in the ceramics at room temperature. The magnetic measurements at room temperature indicate that rare-earth substitution induces ferromagnetism and discerns large and nonzero remnant magnetization as compared to pristine BiFeO3.

  14. Microstructure and properties of Sm-substituted BiFeO3 ceramics

    Institute of Scientific and Technical Information of China (English)

    DAI Haiyang; CHEN Zhenping; LI Tao; LI Yong


    Bi1-xSmxFeO3 (x=0.00-0.15) ceramics were synthesized by sol-gel technique with rapid liquid phase sintering process to study the effects of samarium (Sm) substitution on their microstructure and properties.X-ray diffraction (XRD) and Raman studies showed that the structure of BiFeO3 was changed from rhombohedral to orthorhombic at the samarium substitution concentration about x=0.10.The SEM investigation suggested that the Sm substitution hindered the grain growth.Magnetic measurements showed that all the samples studied had a weak ferromagnetism,and the ferromagnetic property of BiFeO3 was improved by Sm substitution due to the suppressed or broken cycloid spin structure caused by the changes in the crystalline structure and size effect.The leakage current was found to be reduced with increasing Sm concentration.The dielectric and ferroelectric measurements showed that dielectric constant,dielectric loss and ferroelectric properties were strongly dependent on the Sm content,Sm substitution could significantly improve the dielectric constant,remnant polarization and decrease the dielectric loss due to the significant decrease of the electric leakage of the samples.

  15. Thin-film semiconductor rectifier has improved properties (United States)


    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  16. Thin blend films of cellulose and polyacrylonitrile (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  17. Thin Film Electrochemical Power Cells (United States)


    Anion Intercalating Polymer Cathode", proceedings of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. K. Naoi, W.H...of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. M. Lien and W.H. Smyrl, "An Impedance Study of Polyvinylferrocene...Films", in Transient Techniques in Corrosion Science and Engineering, eds. W.H. Smyrl, et al., Electrochemical Society , 1989. K, Naoi, M.M. Lien and

  18. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy


    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  19. Physical Vapor Deposition of Thin Films (United States)

    Mahan, John E.


    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  20. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)


    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  1. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K


    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  2. When are thin films of metals metallic? (United States)

    Plummer, E. W.; Dowben, P. A.


    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  3. Cathodoluminescence degradation of PLD thin films (United States)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.


    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  4. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois


    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  5. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu


    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  6. Deposition and characterization of CuInS2 thin films deposited over copper thin films (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.


    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  7. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... a change from ZEP resist to double layer of PMMA and always requires preliminary exposure dose-tests and final particular attention for lift-off step. EBL resulted to be more suitable for silver NPs, since the deposition of gold (on top of an adhesion thin titanium layer) leads to a variation and non...

  8. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof


    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its


    Institute of Scientific and Technical Information of China (English)

    M.J. Chen; H. Shen


    Photoelectrochromic device is a combination of dye-sensitized solar cells and electrochromic WO3 layers. Ectrochroelmic WO3 layer and TiO2 layer had been prepared by the sol-gel process, then be assembled to pohotoelectrochromic device. The effects of heating temperature on photoelectrochromic were investigated. The results showed that thin films prepared by dip-coating and spin-coating had good film quality and the device made by the method mentioned in the paper had good photoelectrochromie properties.

  10. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio


    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  11. Thin film cadmium telluride solar cells (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.


    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  12. Electrochromism in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.


    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  13. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. [ed.


    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  14. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. (ed.)


    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  15. EBSD analysis of electroplated magnetite thin films (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Teng, C. L.; Ryan, M. P.; Hartmann, U.; Mücklich, F.


    By means of electron backscatter diffraction (EBSD), we analyse the crystallographic orientation of electroplated magnetite thin films on Si/copper substrates. Varying the voltage during the electroplating procedure, the resulting surface properties are differing considerably. While a high voltage produces larger but individual grains on the surface, the surfaces become smoother on decreasing voltage. Good quality Kikuchi patterns could be obtained from all samples; even on individual grains, where the surface and the edges could be measured. The spatial resolution of the EBSD measurement could be increased to about 10 nm; thus enabling a detailed analysis of single magnetite grains. The thin film samples are polycrystalline and do not exhibit a preferred orientation. EBSD reveals that the grain size changes depending on the processing conditions, while the detected misorientation angles stay similar.

  16. Electrostatic Discharge Effects on Thin Film Resistors (United States)

    Sampson, Michael J.; Hull, Scott M.


    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  17. Multiferroic oxide thin films and heterostructures (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom


    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  18. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang


    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  19. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua


    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

  20. Surface morphology of thin films polyoxadiazoles


    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; BRUMA M.; P. Jarka; Tomiczek, B.


    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  1. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)


    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  2. Incoherent and Laser Photodeposition on Thin Films. (United States)


    mixing system. Both a carbon dioxide and dry chemical fire extinguisher were on hand in case a fire was initiated by the compounds. The dimethvlzinc was...summarizes three months of experimental effort devoted toward the production of thin films by the photodissociation of organometallic molecules containing the...that the threshold wavelength for the photodissociation of both Zn- 0 and Se- (CH3 )2 was approximately 2420A. Consequently, these laser photodeposition

  3. Effect of Gd doping on structural, electrical and magnetic properties of BiFeO 3 electroceramic (United States)

    Pradhan, S. K.; Roul, B. K.


    Room temperature multiferroic electroceramics of Gd doped BiFeO 3 monophasic materials have been synthesized adopting a slow step sintering schedule. Incorporation of Gd nucleates the development of orthorhombic grain growth habit without the appearance of any significant impurity phases with respect to original rhombohedral ( R 3 c ) phase of un-doped BiFeO 3 . It is observed that, the materials showed room temperature enhanced electric polarization as well as ferromagnetism when rare earth ions like Gd doping is critically optimized ( x =0.15) in the composition formula of Bi 1+2 x Gd 2 x /2 Fe 1-2 x O 3 . We believe that magnetic moment of Gd +3 ions in Gd doped BiFeO 3 tends to align in the same direction with respect to ferromagnetic component associated with the iron sub lattice. The dielectric constant as well as loss factor shows strong dispersion at lower frequencies and the value of leakage current is greatly suppressed with the increase in concentration of x in the above composition. Addition of excess bismuth and Gd ( x =0.1 and 0.15) caused structural transformation as well as compensated bismuth loss during high temperature sintering. Doping of Gd in BiFeO 3 also suppresses spiral spin modulation structure, which can change Fe-O-Fe bond angle or spin order resulting in enhanced ferromagnetic property.

  4. Reactively sputtered Fe3O4-based films for spintronics

    Institute of Scientific and Technical Information of China (English)

    Li Peng; Jin Chao; Mi Wen-Bo; Bai Hai-Li


    Half metallic polycrystalline,epitaxial Fe3O4 films and Fe3O4-based heterostructures for spintronics were fabricated by DC reactive magnetron sputtering.Large tunneling magnetoresistance was found in the polycrystalline Fe3O4 films and attributed to the insulating grain boundaries.The pinning effect of the moments at the grain boundaries leads to a significant exchange bias.Frozen interfacial/surface moments induce weak saturation of the high-field magnetoresistance.The films show a moment rotation related butterfly-shaped magnetoresistance.It was found that in the films,natural growth defects,antiphase boundaries,and magnetocrystaltine anisotropy play important roles in high-order anisotropic magnetoresistance.Spin injection from Fe3O4 films to semiconductive Si and ZnO was measured to be 45% and 28.5%,respectively.The positive magnetoresistance in the Fe3O4-based heterostructures is considered to be caused by a shift of the Fe3O4 eg ↑ band near the interface.Enhanced magnetization was observed in Fe3O4/BiFeO3 heterostructures experimentally and further proved by first principle calculations.The enhanced magnetization can be explained by spin moments of the thin BiFeO3 layer substantially reversing into a ferromagnetic arrangement under a strong coupling that is principally induced by electronic orbital reconstruction at the interface.

  5. Design and characterization of thin film microcoolers (United States)

    LaBounty, Chris; Shakouri, Ali; Bowers, John E.


    Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.

  6. Titanium diffusion in gold thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, William E. [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States); Gregori, Giuliano, E-mail: g.gregori@fkf.mpg.d [California NanoSystems Institute, University of California, Santa Barbara, CA 93106-5050 (United States); Mates, Thomas [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States)


    In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 {sup o}C are investigated. The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion. It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 {sup o}C. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy {Delta}E = 0.66 eV and the corresponding pre-exponential factor D{sub 0} = 5 x 10{sup -11} cm{sup 2}/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 < {Delta}E{sub gb} < 0.66 eV and the pre-exponential factor s{sub 0}D{sub gb0} = 1.14 x 10{sup -8} cm{sup 2}/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 {sup o}C.

  7. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing


    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  8. Dynamic Characterization of Thin Film Magnetic Materials (United States)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  9. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))


    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  10. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter


    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  11. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)


    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  12. Optical properties of thin polymer films (United States)

    Kasarova, Stefka N.; Sultanova, Nina G.; Petrova, Tzveta; Dragostinova, Violeta; Nikolov, Ivan


    In this report three types of optical polymer thin films deposited on glass substrates are investigated. Transmission spectra of the polymer samples are obtained in the range from 400 nm to 1500 nm. A laser microrefractometer has been used to measure the refractive indices of the examined materials at 406, 656, 910 and 1320 nm. Dispersion properties of the polymer films are analyzed on the base of the Cauchy-Schott's and Sellmeier`s approximations. Dispersion coefficients are calculated and dispersion charts in the visible and near infrared spectral regions are presented and compared. Abbe numbers of mean and partial dispersion of the polymer films are obtained. Calculation of refractive indices at many laser emission wavelengths in the considered spectral range is accomplished.

  13. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian


    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  14. A training effect on electrical properties in nanoscale BiFeO3. (United States)

    Goswami, Sudipta; Bhattacharya, Dipten; Li, Wuxia; Cui, Ajuan; Jiang, QianQing; Gu, Chang-zhi


    We report our observation of the training effect on dc electrical properties in a nanochain of BiFeO3 as a result of large scale migration of defects under the combined influence of electric field and Joule heating. We show that an optimum number of cycles of electric field within the range zero to ~1.0 MV cm(-1) across a temperature range 80-300 K helps in reaching the stable state via a glass-transition-like process in the defect structure. Further treatment does not give rise to any substantial modification. We conclude that such a training effect is ubiquitous in pristine nanowires or chains of oxides and needs to be addressed for applications in nanoelectronic devices.

  15. Nanoscale Control of Phase Variants in Strain-Engineered BiFeO3

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, Rama K [ORNL; Li, J. Y. [University of Washington, Seattle; Liu, Y. Y. [University of Washington, Seattle; Liang, W. -I. [National Chiao Tung University, Hsinchu, Taiwan; Kumar, Amit [ORNL; Jesse, Stephen [ORNL; Chen, Y. -C. [National Cheng Kung University, Tainan, Taiwan; Chu, Y.-H. [National Chiao Tung University, Hsinchu, Taiwan; Nagarajan, Valanoor [University of New South Wales; Kalinin, Sergei V [ORNL


    Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral tetragonal (R-T) BiFeO3 (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T->R transition is activated at lower voltages compared to T->T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.

  16. Observation of room temperature saturated ferroelectric polarization in Dy substituted BiFeO3 ceramics

    KAUST Repository

    Zhang, Shuxia


    High quality Bi1− x Dy x FeO3 (0 ≤ x ≤ 0.15) ceramics have been fabricated by sintering Dy-doped BiFeO3 (BFO) precursor powders at a low temperature of 780 °C. The magnetic properties of BFO were improved by the introduction of Dy on the Bi-site. More importantly, well saturated ferroelectric hysteresis loops and polarization switching currents have been observed at room temperature. A large remnant polarization (2P r) value of 62 μC/cm2 is achieved, which is the highest value reported so far for rare-earth-doped BFO ceramics. Moreover, mechanisms for improved multiferroic properties depending on chemical doping-caused structure evolutions have also been discussed.

  17. Tetragonal BiFeO3 on yttria-stabilized zirconia

    Directory of Open Access Journals (Sweden)

    Heng-Jui Liu


    Full Text Available High structural susceptibility of multiferroic BiFeO3 (BFO makes it a potential replacement of current Pb-based piezoelectrics. In this study, a tetragonal phase is identified based on a combination of x-ray diffraction, scanning transmission electronic microscopy, x-ray absorption spectroscopy, and Raman spectroscopy when BFO is grown on yttria-stabilized zirconia (YSZ substrates. To distinguish the discrepancy between this tetragonal phase and common cases of monoclinic BFO, piezoelectric force microscopy images and optical property are also performed. It shows a lower electrostatic energy of ferroelectric domains and a large reduction of band gap for BFO grown on YSZ substrate comparing to the well-known one grown on LaAlO3 substrate. Our findings in this work can provide more insights to understand the structural diversity of multiferroic BFO system for further applications.

  18. Structural and electronic transformation pathways in morphotropic BiFeO3 (United States)

    Sharma, P.; Heo, Y.; Jang, B.-K.; Liu, Y. Y.; Li, J. Y.; Yang, C.-H.; Seidel, J.


    Phase boundaries in multiferroics, in which (anti-)ferromagnetic, ferroelectric and ferroelastic order parameters coexist, enable manipulation of magnetism and electronic properties by external electric fields through switching of the polarization in the material. It has been shown that the strain-driven morphotropic phase boundaries in a single-phase multiferroic such as BiFeO3 (BFO) can exhibit distinct electronic conductivity. However, the control of ferroelectric and phase switching and its correlation with phase boundary conductivity in this material has been a significant challenge. Supported by a thermodynamic approach, here we report a concept to precisely control different switching pathways and the associated control of electronic conductivity in mixed phase BFO. This work demonstrates a critical step to control and use non-volatile strain-conductivity coupling at the nanoscale. Beyond this observation, it provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic and ferroelectric order in multiferroic materials.

  19. Impedance Spectroscopic Studies of BiFeO3-Pb(ZrTi)O3 Nanocomposites (United States)

    Choudhary, R. N. P.; Barik, Subrat K.; Katiyar, R. S.

    BiFeO3-Pb(ZrTi)O3 [i.e., (Bi1-xPbx)(Fe1-xZr0.6xTi0.4x)O3 (x = 0.15, 0.25, 0.40, 0.50)] nanocomposites were synthesized using mechanical activation followed by a solid-state reaction technique. The dielectric parameters (capacitance, dissipation factor D, impedance Z and phase angle Φ) of all the samples were measured in a wide range of frequencies (1 kHz-1 MHz) and temperatures (300-630 K) in air atmosphere using an impedance analyzer with low signal amplitude of 500 mV. Electrical properties of the compounds were studied using a complex impedance spectroscopy (CIS) technique. The frequency dependence of electrical data was analyzed in the framework of conductivity and modulus formalisms. AC conductivity spectrum obeys Jonscher's universal power law.

  20. Investigations of electrical properties of Nd substituted BiFeO3 multiferroic ceramics (United States)

    Rao, T. Durga; Asthana, Saket


    Polycrystalline BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) compounds were synthesized by conventional solid-state route. All the compounds were crystallized in rhombohedral structure with R3c (IUCr No. 161) space group. Negative temperature coefficient of Resistance character has been observed from Complex impedance studies. ac conductivity in these compounds follows universal power law. Correlated Barrier Hopping (CBH) model has been employed to explain the charge carries transport mechanism. Density of states near Fermi level observed to be decreasing with the Nd substitution. Improved insulating character and decrease in density of states in BNFO compound suggested that possible reduction in oxygen vacancies. Activation energies calculated from Arrhenius plots revealed that electronic hopping, oxygen vacancies movements are the contributors to the ac conduction in the measured temperature range.

  1. Study of structural, magnetic and electrical properties on Ho-substituted BiFeO3 (United States)

    Durga Rao, T.; Karthik, T.; Srinivas, Adiraj; Asthana, Saket


    The polycrystalline Bi1-xHoxFeO3 (x=0, 0.05, 0.1) compounds were synthesized by conventional solid-state route. Rietveld refinement revealed that all the compounds were stabilized in rhombohedral structure with R3c (IUCr No. 161) space group. Room temperature magnetic measurements revealed that Ho substitution induces ferromagnetism and improves the magnetic properties of BiFeO3. A competing ferro and anti-ferro magnetic interaction was observed in these compounds. Temperature variation of complex impedance studies revealed that electrical properties are improved with the Ho substitution. The ac conductivity found to obey universal power law and showed the negative temperature coefficient of resistance character. Correlated barrier hopping model (CBH) was employed to explain the frequency and temperature dependence of ac conductivity and the mechanism of transport in the material BFO and Ho substituted BFO. Density of states near Fermi level was calculated by using the ac conductivity data.

  2. Ab initio study on phase transition and magnetism of BiFeO3 under pressure

    Institute of Scientific and Technical Information of China (English)

    Feng Hong-Jian; Liu Fa-Min


    In this paper the first-principles calculations within local spin density approximation(LSDA)+U show that BiFeO3 experiences a mixed phase state with P4mm structure being the intermediate phase before the pressure of phase transition is reached.The critical pressure for the insulator-metal transition(IMT)is found to be about 50 GPa.A pressure induced crossover of high-spin states and low-spin states is observed close to the IMT pressure in R3c structure.The LSDA+U calculations account well for the mechanism of the IMT and crossover of spin states predicted in recent experiment(Re[1]).

  3. A New Method of Fabricating NASICON Thin Film

    Institute of Scientific and Technical Information of China (English)

    WNGLing; SUNJialin; 等


    Nasicon thin films of 15 μm thick on YSZ sub-strates were prepared by means of solid state reaction at 1230℃ for 10 hours,Stuctural characteriza-tion of the films were performed by XRD ,SEM and EDX,A new tyype of CO2 gas sensor with Nasicon thin film as solid electrolyte was developed.

  4. Bismuth thin films obtained by pulsed laser deposition (United States)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.


    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  5. Effect of surface modification of BiFeO3 on the dielectric, ferroelectric, magneto-dielectric properties of polyvinylacetate/BiFeO3 nanocomposites

    Directory of Open Access Journals (Sweden)

    O. P. Bajpai


    Full Text Available Bismuth ferrite (BiFeO3 is considered as one of the most promising materials in the field of multiferroics. In this work, a simple green route as well as synthetic routes has been used for the preparation of pure phase BiFeO3. An extract of Calotropis Gigantea flower was used as a reaction medium in green route. In each case so formed BiFeO3 particles are of comparable quality. These particles are in the range of 50–60 nm and exhibit mixed morphology (viz., spherical and cubic as confirmed by TEM analysis. These pure phase BiFeO3 nanoparticles were first time surface modified effectively by mean of two silylating agent’s viz., tetraethyl orthosilicate (TEOS and (3-Aminopropyltriethoxysilane (APTES. Modified and unmodified BiFeO3 nanoparticles were efficiently introduced into polyvinylacetate (PVAc matrix. It has been shown that nanocomposite prepared by modified BiFeO3 comprise superior dispersion characteristics, improved ferroelectric properties and favorable magneto-dielectric properties along with excellent wettability in compare to nanocomposite prepared by unmodified BiFeO3. These preliminary results demonstrate possible applications of this type of nanocomposites particularly in the field of multiferroic coating and adhesives.

  6. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael


    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  7. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films (United States)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi


    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  8. Intrinsic instability of thin liquid films on nanostructured surfaces (United States)

    Rokoni, Arif; Hu, Han; Sun, Liyong; Sun, Ying


    The instability of a thin liquid film on nanostructures is not well understood but is important in liquid-vapor two-phase heat transfer (e.g., thin film evaporation and boiling), lubrication, and nanomanufacturing. In thin film evaporation, the comparison between the non-evaporating film thickness and the critical film breakup thickness determines the stability of the film: the film becomes unstable when the critical film breakup thickness is larger than the non-evaporating film thickness. In this study, a closed-form model is developed to predict the critical breakup thickness of a thin liquid film on 2D periodic nanostructures based on minimization of system free energy in the limit of a liquid monolayer. Molecular dynamics simulations are performed for water thin films on square nanostructures of varying depth and wettability and the simulations agree with the model predictions. The results show that the critical film breakup thickness increases with the nanostructure depth and the surface wettability. The model developed here enables the prediction of the minimum film thickness for stable thin film evaporation on a given nanostructure.

  9. Cerium Dioxide Thin Films Using Spin Coating

    Directory of Open Access Journals (Sweden)

    D. Channei


    Full Text Available Cerium dioxide (CeO2 thin films with varying Ce concentrations (0.1 to 0.9 M, metal basis were deposited on soda-lime-silica glass substrates using spin coating. It was found that all films exhibited the cubic fluorite structure after annealing at 500°C for 5 h. The laser Raman microspectroscopy and GAXRD analyses revealed that increasing concentrations of Ce resulted in an increase in the degree of crystallinity. FIB and FESEM images confirmed the laser Raman and GAXRD analyses results owing to the predicted increase in film thickness with increasing Ce concentration. However, porosity and shrinkage (drying cracking of the films also increased significantly with increasing Ce concentrations. UV-VIS spectrophotometry data showed that the transmission of the films decreased with increasing Ce concentrations due to the increasing crack formation. Furthermore, a red shift was observed with increasing Ce concentrations, which resulted in a decrease in the optical indirect band gap.

  10. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores. (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R


    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  11. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)


    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  12. Thin-liquid-film evaporation at contact line

    Institute of Scientific and Technical Information of China (English)

    Hao WANG; Zhenai PAN; Zhao CHEN


    When a liquid wets a solid wall, the extended meniscus near the contact line may be divided into three regions: a nonevaporating region, where the liquid is adsorbed on the wall; a transition region or thin-film region, where effects of long-range molecular forces (disjoining pressure) are felt; and an intrinsic meniscus region, where capillary forces dominate. The thin liquid film, with thickness from nanometers up to micrometers, covering the transition region and part of intrinsic meniscus, is gaining interest due to its high heat transfer rates. In this paper, a review was made of the researches on thin-liquid-film evaporation. The major characteristics of thin film, thin-film modeling based on continuum theory, simulations based on molecular dynamics, and thin-film profile and temperature measurements were summarized.

  13. Metallic Thin-Film Bonding and Alloy Generation (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)


    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  14. Stripe glasses in ferromagnetic thin films (United States)

    Principi, Alessandro; Katsnelson, Mikhail I.


    Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the strong out-of-plane anisotropy, but its direction changes periodically, forming an alternating spin-up and spin-down stripe pattern. The latter is stabilized by the competition between the ferromagnetic coupling and dipole-dipole interactions, and disappears when a moderate in-plane magnetic field is applied. It has been suggested that such a behavior may be understood in terms of a self-induced stripe glassiness. In this paper we show that such a scenario is compatible with the experimental findings. The strong out-of-plane magnetic anisotropy of the film is found to be beneficial for the formation of both stripe-ordered and glassy phases. At zero magnetic field the system can form a glass only in a narrow interval of fairly large temperatures. An in-plane magnetic field, however, shifts the glass transition towards lower temperatures, therefore enabling it at or below room temperature. In good qualitative agreement with the experimental findings, we show that a moderate in-plane magnetic field of the order of 50 mT can lead to the formation of defects in the stripe pattern, which sets the onset of the glass transition.

  15. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures. (United States)

    Ahnood, Arman; Zhou, H; Suzuki, Y; Sliz, R; Fabritius, T; Nathan, Arokia; Amaratunga, G A J


    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics.

  16. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.


    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  17. Thin-film cadmium telluride solar cells (United States)

    Chu, T. L.


    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  18. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo


    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  19. 3D Field Simulation of Magnetic Thin Film Inductor


    FUJIWARA, Toshiyasu; CHOI, Kyung-Ku; SATO, SHIGEKI


    The 3D magnetic field simulations with FEM (finite element method) have been performed to predictand understand the performance of Magnetic Thin Film Inductor (MTFl). Inductor structures of planar electroplated Cu spiralcoil, which are sandwiched and underlaid with magnetic thin films, are considered as the simulation models. The inductance increment of 300% compared to air-core inductor was predicted when the sandwiched 5μm thickness magnetic thin film with relative permeability of 600 was a...

  20. Crystal structure of fiber structured pentacene thin films



    This PhD thesis presents a technique based on the grazing incidence crystal truncation rod (GI-CTR) X-ray diffraction method used to solve the crystal structure of substrate induced fiber structured organic thin films. The crystal structures of pentacene thin films grown on technologically relevant gate dielectric substrates are reported. It is widely recognized, that the intrinsic charge transport properties in organic thin film transistors (OTFTs) depend strongly on the crystal structur...

  1. Current-induced surface roughness reduction in conducting thin films (United States)

    Du, Lin; Maroudas, Dimitrios


    Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film's wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. The modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.

  2. Polycrystalline-thin-film thermophotovoltaic cells (United States)

    Dhere, Neelkanth G.


    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  3. Design and Simulation of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye


    A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

  4. Non-local thin films in Casimir force calculations

    CERN Document Server

    Esquivel, R


    he Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than the mean free path for electrons, the difference between local and nonlocal calculations of the Casimir force is of the order of a few tenths of a percent. Thus the local description of thin metallic films is adequate within the current experimental precision and range of separations.

  5. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian


    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  6. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep


    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  7. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L


    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  8. Thin-Film Materials Synthesis and Processing Facility (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  9. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S


    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  10. Performance Comparison of Thin and Thick Film Microstrip Rejection Filters


    Mandhare, M. M.; S.A. Gangal; M. S. Setty; Karekar, R. N.


    A performance comparison of microstripline circuits using thin and thick film techniques has been studied, in which a Microstrip rejection filter, in the X-band of microwaves, is used as test circuit. A thick film technique is capable of giving good adhesive films with comparable d.c. sheet resistivity, but other parameters such as open area (porosity), particle size, and edge definition are inferior to thin-film microstrip filters. Despite this drawback, the average value of transmission, tr...

  11. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro


    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  12. Electron impinging on metallic thin film targets

    Energy Technology Data Exchange (ETDEWEB)

    Rouabah, Z. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France); Laboratoire Materiaux et Systemes Electroniques, Centre Universitaire de Bordj-Bou-Arreridj, El-Anasser, 34265 Bordj-Bou-Arreridj (Algeria); Bouarissa, N., E-mail: [Department of Physics, Faculty of Science, King Khalid University, Abha, P.O.Box 9004 (Saudi Arabia); Champion, C. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France)


    Based on the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] combined to a home-made Monte Carlo simulation, the present work deals with backscattering coefficients, mean penetration depths and stopping profiles for 1-4 keV electrons normally incident impinging on Al and Cu thin film targets. The cross-sections used to describe the electron transport are calculated via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently given [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The behavior of the backscattering coefficient, mean penetration depth and stopping profiles versus the metallic film thickness at the nanometric scale and beyond is here analyzed and discussed.

  13. Analysis on mechanism of thin film lubrication

    Institute of Scientific and Technical Information of China (English)

    ZHANG Chaohui; LUO Jianbin; HUANG Zhiqiang


    It is an important concern to explore the properties and principles of lubrication at nano or molecularscale. For a long time, measurement apparatus for filmthickness of thin film lubrication (TFL) at nano scale havebeen devised on the basis of superthin interferometry technique. Many experiments were carried out to study the lubrication principles of TFL by taking advantages of aforementioned techniques, in an attempt to unveil the mechanism of TFL. Comprehensive experiments were conducted to explore the distinctive characteristics of TFL. Results show that TFL is a distinctive lubrication state other than any known lubrication ones, and serves as a bridge between elastohydrodynamic lubrication (EHL) and boundary lubrication (BL). Two main influence factors of TFL are the solid surface effects and the molecular properties of the lubricant, whose combination effects result in alignment of liquid molecules near the solid surfaces and subsequently lubrication with ordered film emerged. Results of theoretical analysis considering microstructure are consistent with experimental outcomes, thus validating the proposed mechanism.

  14. Separation Efficiency of Thin-film Evaporators

    Institute of Scientific and Technical Information of China (English)



    The recovery of contaminants and useful substances from liquid wastes, the purification of production effluents and the separation of thermally instable mixtures are some of the multivarious applications of thin-film distillors in many processes of the chemical and allied industries and of the food industries. In a study carried out in pilot plants with distillation test systems there was found a good agreement between the experimental separation results and those obtained by computing with a theorectical model; the latter is based on the assumption of phase equilibrium between the vapour formed on an infinitely small element of area in a liquid film of any given concentric periphery of the vertically arranged evaporator. These tests were perfomed under various phase loads.

  15. Birefringent thin films and polarizing elements

    CERN Document Server

    Hodgkinson, Ian J


    This book describes the propagation of light in biaxial media, the properties of biaxial thin films, and applications such as birefringent filters for tuning the wavelength of dye lasers.A novel feature of the first part is the parallel treatment of Stokes, Jones, and Berreman matrix formalisms in a chapter-by-chapter development of wave equations, basis vectors, transfer matrices, reflection and transmission equations, and guided waves. Computational tools for MATLAB are included.The second part focuses on an emerging planar technology in which anisotropic microstructures are formed by obliqu

  16. Synthesis and Characterization of Thin Films. (United States)


    j,k tinteger; freq comp % array CO..203 of integer; A, phase ~carg : array CC. .2CJ of realI begin woriteln(’enter numfourierpts’);N readln(num fourier...Thesis DTIG SELECTfE: rmas do~amaat hau s appvildlttb tol a.l e... . . .o fix paut reloc~e and 9010) Is . < " ,,.’. 5’ , , "" "’’"°"" % Is ViifmyI lr...URIP) grants. 2. THIN FILM FACILITY A 1983 DoD University Research Instrumentation Program Grant to ISU was used for construction of the first phase

  17. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell


    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than C.

  18. Robust, Thin Optical Films for Extreme Environments (United States)


    The environment of space presents scientists and engineers with the challenges of a harsh, unforgiving laboratory in which to conduct their scientific research. Solar astronomy and X-ray astronomy are two of the more challenging areas into which NASA scientists delve, as the optics for this high-tech work must be extremely sensitive and accurate, yet also be able to withstand the battering dished out by radiation, extreme temperature swings, and flying debris. Recent NASA work on this rugged equipment has led to the development of a strong, thin film for both space and laboratory use.

  19. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.


    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  20. Vortex motion in YBCO thin films (United States)

    Shapiro, V.; Verdyan, A.; Lapsker, I.; Azoulay, J.


    Hall resistivity measurements as function of temperature in the vicinity of Tc were carried out on a thin films YBCO superconductors. A sign reversal of Hall voltage with external magnetic field applied along c axis have been observed upon crossing Tc. Hall voltage in the mixed state was found to be insensitive to the external magnetic field inversion. These effects are discussed and explained in terms of vortex motion under the influence of Magnus force balanced by large damping force. It is argued that in this model the flux-line velocity has component opposite to the superfluid current direction thus yielding a negative Hall voltage.

  1. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail:; Patocka, Florian, E-mail:; Schneider, Michael, E-mail:; Schmid, Ulrich, E-mail: [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail:; Haberl, Verena, E-mail: [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)


    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  2. Phase transitions in pure and dilute thin ferromagnetic films (United States)

    Korneta, W.; Pytel, Z.


    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  3. Capillary instabilities in thin films. II. Kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.


    We consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t/sup -3/4/ (log/sup 3/(t/ rho/sup 4//sub c/)). Small holes with a radii less than rho/sub c/ shrink, where rho/sub c/ is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size (rho/sub eq/) scales as rho/sup 2//sub eq/ or rho/sup 4//sub eq/ for evaporation/condensation or surface diffusion kinetics, respectively.

  4. Calculation of Specific Heat for Aluminium Thin Films

    Institute of Scientific and Technical Information of China (English)

    LU Yao; SONG Qing-Lin; XIA Shan-Hong


    @@ We employ Prasher's non-dimensional form to analyse the size effects on specific heat of Al thin films. Compared the calculation results of pure aluminium film with the experimental data, it is found that the reduction of phonon states is not the main reason of the size effect on the specific heat Al thin films with thickness from 10hm to 370nm. However, the Al thin film in air usually has an oxidation layer and the specific heat of the layer is smaller than Al. By including the contribution of the oxidation layer to the thin-film specific heat, the calculation results are much closer to the experimental data. This may be a possible reason of the size effects on specific heat of Al thin films.

  5. Antimony selenide thin-film solar cells (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang


    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  6. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.


    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  7. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus


    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  8. 2D laminated cylinder-like BiFeO3 composites: Hydrothermal preparation, formation mechanism, and photocatalytic properties (United States)

    Gao, Xiaoming; Dai, Yuan; Fu, Feng; Hua, Xiufu


    BiFeO3 perovskite with 2D laminated cylinder-like structure was prepared via a facile one-pot hydrothermal method, whose morphologies and optical properties was characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and UV-Visible diffuse reflectance spectroscopy (UV-Vis DRS). The photocatalytic properties of the as-prepared BiFeO3 composites were evaluated according to degrading Rhodamine B (RhB) and desulfurization under visible light irradiation, with excellent photocatalytic degradation and desulfurization activity found. Moreover, the mechanism study of active free radicals in photocatalytic activity indicates that the h+ radical in holes was mainly responsible for synergistic catalytic efficacy in photocatalytic degradation.

  9. Melting of Bi sublattice in nanosized BiFeO3 Perovskite by resonant X-ray diffraction. (United States)

    Petkov, V; Selbach, S M; Einarsrud, M-A; Grande, T; Shastri, S D


    Free-standing BiFeO3 perovskite particles with a size ranging from polycrystalline bulk down to 5 nm have been studied by high-energy resonant (Bi K edge) x-ray diffraction coupled to differential atomic pair distribution function analysis. Nanosized BiFeO3 particles are found to exhibit extra, i.e., beyond the usual thermal, structural disorder that increases progressively with diminishing their size. In particles of size smaller than approximately 18 nm the disorder destroys the structural coherence of the Bi sublattice and disturbs that of the Fe-based sublattice in the perovskite structure, substantially affecting the magnetoelectric properties it carries. The new structural information helps better understand the unusual behavior of perovskites structured at the nanoscale.

  10. PZT-like structural phase transitions in the BiFeO3-KNbO3 solid solution. (United States)

    Lennox, Robert C; Taylor, Daniel D; Vera Stimpson, Laura J; Stenning, Gavin B G; Jura, Marek; Price, Mark C; Rodriguez, Efrain E; Arnold, Donna C


    Despite the high prominence of the perovskites BiFeO(3) and KNbO(3) the solid solution between the two has received little attention. We report a detailed neutron and synchrotron X-ray powder diffraction, and Raman spectroscopy study which demonstrates an R3c→P4mm→Amm2 series of structural phase transitions similar to that exhibited by the PbZrO(3)-PbTiO(3) solid solution.

  11. Microstructural and mechanical characteristics of Ni–Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petley, Vijay [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India); Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan [Department of Instrumentation and Applied Physics, IISc, Bangalore 12 (India); Chandrasekhar, U. [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India)


    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  12. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.


    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  13. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader


    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  14. Band-gap tuning and magnetic properties of heterovalent ions (Ba, Sr and Ca) substituted BiFeO3 nanoparticles (United States)

    Chauhan, Sunil; Kumar, Manoj; Katyal, S. C.


    A Comparative study of heterovalent Ba, Sr and Ca ions substitution on the structural, vibrational, optical and magnetic properties of BiFeO3 nanoparticles was carried out. The distorted rhombohedral structure was confirmed from both X-ray diffraction and Raman spectroscopy techniques in pure BiFeO3 and Bi0.85A0.15FeO3 (A= Ba, Sr and Ca) samples. UV-Visible spectroscopy results show that the band-gap of BiFeO3 nanoparticles can be tuned by heterovalent ions substitution from 2.12 eV for BiFeO3 to 2.10, 2.06 and 2.03 eV for Ca, Sr and Ba substituted BiFeO3 nanoparticles respectively. The magnetic measurements indicate enhancement in magnetization for heterovalent A2+ substituted BiFeO3 samples and the magnetization increases with increase of ionic radius of the substituted ions.

  15. High temperature superconducting thin films for microwave filters

    Institute of Scientific and Technical Information of China (English)

    ZHAO; Xinjie(赵新杰); LI; Lin(李林); LEI; Chong(雷冲); TIAN; Ybngjun(田永军)


    YBa2Cu3O7-δ and Tl2Ba2CaCu2O8 thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.

  16. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.


    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid d

  17. Thermochemical Analysis of Molybdenum Thin Films on Porous Alumina. (United States)

    Lee, Kyoungjin; de Lannoy, Charles-François; Liguori, Simona; Wilcox, Jennifer


    Molybdenum (Mo) thin films (thickness thin-film composites were stable below 300 °C but had no reactivity toward gases. Mo thin films showed nitrogen incorporation on the surface as well as in the subsurface at 450 °C, as confirmed by X-ray photoelectron spectroscopy. The reactivity toward nitrogen was diminished in the presence of CO2, although no carbon species were detected either on the surface or in the subsurface. The Mo thin films have a very stable native oxide layer, which may further oxidize to higher oxidation states above 500 °C due to the reaction with the porous anodized alumina substrate. The oxidation of Mo thin films was accelerated in the presence of oxidizing gases. At 600 °C in N2, the Mo thin film on anodized alumina was completely oxidized and may also have been volatilized. The results imply that choosing thermally stable and inactive porous supports and operating in nonoxidizing conditions below 500 °C will likely maintain the stability of the Mo composite. This study provides key information about the chemical and structural stability of a Mo thin film on a porous substrate for future membrane applications and offers further insights into the integrity of thin-film composites when exposed to harsh conditions.

  18. Tools to Synthesize the Learning of Thin Films (United States)

    Rojas, Roberto; Fuster, Gonzalo; Slusarenko, Viktor


    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase…

  19. Stretchable, adhesive and ultra-conformable elastomer thin films. (United States)

    Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji


    Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (Tg). In this paper, we report that free-standing polystyrene (PS, Tg: 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, Tg: -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (Ra = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

  20. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)


    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  1. Vertically aligned biaxially textured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)


    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  2. Oxynitride Thin Film Barriers for PV Packaging

    Energy Technology Data Exchange (ETDEWEB)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.


    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  3. Amorphous molybdenum silicon superconducting thin films

    Directory of Open Access Journals (Sweden)

    D. Bosworth


    Full Text Available Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1−x, though other amorphous superconductors such as molybdenum silicide (MoxSi1−x offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz, there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  4. Effects of magnetic annealing on structure and multiferroic properties of pure and dysprosium substituted BiFeO 3

    KAUST Repository

    Zhang, Shuxia


    In this work, the effects of magnetic annealing on crystal structure and multiferroic properties of BiFeO 3 and Bi 0.85Dy 0.15FeO 3 have been investigated. It is found that the X-ray diffraction patterns of pure BiFeO 3 samples are obviously broadened after magnetic annealing, whereas those of Bi 0.85Dy 0.15FeO 3 samples are almost unchanged. Magnetic field annealing did not affect the magnetic properties of these two kinds of samples much. However, ferroelectric properties of the two materials exhibited different behaviors after magnetic field annealing. For pure BiFeO 3 samples, the remnant polarizations (P r) are suppressed; in contrast, for Bi 0.85Dy 0.15FeO 3 samples, P r is greatly enhanced. Possible mechanisms for the effects of magnetic field annealing have been discussed. © 2012 Elsevier B.V. All rights reserved.

  5. Self-interaction corrected LDA + U investigations of BiFeO3 properties: plane-wave pseudopotential method (United States)

    Yaakob, M. K.; Taib, M. F. M.; Lu, L.; Hassan, O. H.; Yahya, M. Z. A.


    The structural, electronic, elastic, and optical properties of BiFeO3 were investigated using the first-principles calculation based on the local density approximation plus U (LDA + U) method in the frame of plane-wave pseudopotential density functional theory. The application of self-interaction corrected LDA + U method improved the accuracy of the calculated properties. Results of structural, electronic, elastic, and optical properties of BiFeO3, calculated using the LDA + U method were in good agreement with other calculation and experimental data; the optimized choice of on-site Coulomb repulsion U was 3 eV for the treatment of strong electronic localized Fe 3d electrons. Based on the calculated band structure and density of states, the on-site Coulomb repulsion U had a significant effect on the hybridized O 2p and Fe 3d states at the valence and the conduction band. Moreover, the elastic stiffness tensor, the longitudinal and shear wave velocities, bulk modulus, Poisson’s ratio, and the Debye temperature were calculated for U = 0, 3, and 6 eV. The elastic stiffness tensor, bulk modulus, sound velocities, and Debye temperature of BiFeO3 consistently decreased with the increase of the U value.

  6. Perpendicular Magnetic Anisotropy and High Spin Polarization in Tetragonal Fe4N /BiFeO3 Heterostructures (United States)

    Yin, Li; Mi, Wenbo; Wang, Xiaocha


    The tetragonal Fe4N /BiFeO3(001 ) heterostructures aimed at simultaneously gaining the perpendicular magnetic anisotropy (PMA) and high spin polarization have been investigated by the first-principles method. It is found that Fe4N with FeAFeB termination is better for achieving interfacial and inner PMA simultaneously than (FeB)2N termination. When the positions of interfacial FeA and FeB relative to Fe in BiFeO3 are changed, the PMA in Fe4N transforms into the in-plane magnetic anisotropy. Especially, PMA in Fe4N near the heterointerfaces depends on the direction of ferroelectric polarization in BiFeO3 . Finally, the interfacial and inner PMA of Fe4N along with high spin polarization appear in the stable FeAFeB/Fe -O2 case owing to the 3 d -3 d orbital hybridization. These results provide the opportunities for developing multifunctional spintronic devices.

  7. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion


    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  8. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T


    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  9. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki


    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  10. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam


    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  11. Peculiarities of spin reorientation in a thin YIG film.

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya. B.; Tsymbal, L. T.; Linnik, A. I.; Dan' shin, N. K.; Izotov, A. I.; Wigen, P. E.


    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1{micro}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  12. Peculiarities of spin reorientation in a thin YIG film

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya.B.; Tsymbal, L.T.; Linnik, A.I.; Dan' shin, N.K.; Izotov, A.I.; Wigen, P.E


    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1 {mu}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  13. Preface: Advanced Thin Film Developments and Nano Structures

    Institute of Scientific and Technical Information of China (English)

    Ray Y.Lin


    @@ In this special issue, we invited a few leading materials researchers to present topics in thin films, coatings, and nano structures. Readers will find most recent developments in topics, including recent advances in hard, tough, and low friction nanocomposite coatings; thin films for coating nanomaterials; electroless plating of silver thin films on porous Al2O3 substrate; CrN/Nano Cr interlayer coatings; nano-structured carbide derived carbon (CDC) films and their tribology; predicting interdiffusion in high-temperature coatings; gallium-catalyzed silica nanowire growth; and corrosion protection properties of organofunctional silanes. Authors are from both national laboratories and academia.

  14. Electrochemical Intercalation of Sodium into Silicon Thin Film

    Institute of Scientific and Technical Information of China (English)

    Dong-Yeon Kim; Hyo-Jun Ahn; Gyu-Bong Cho; Jong-Seon Kim; Ho-Suk Ryu; Ki-Won Kim; Jou-Hyeon Ahn; Won-Cheol Shin


    In order to investigate the possibility of Si thin film as an anode for Na battery, we studied the electrochemical intercalation of sodium into the Si film. Amorphous Si thin film electrode was prepared using DC magnetron sputtering. Sodium ion could intercalate into Si thin film upto Na0.52Si, i.e. 530mAh · g-1-Si. The first discharge capacity was 80mAh.·g-1-Si, which meant reversible amount of sodium intercalation. The discharge capacity slightly decreased to 70mAh · g-1-Si after 10 cycles.

  15. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail:; Bunting, Andrew; Cheung, Rebecca


    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  16. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang


    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  17. Density of organic thin films in organic photovoltaics (United States)

    Zhao, Cindy X.; Xiao, Steven; Xu, Gu


    A practical parameter, the volume density of organic thin films, found to affect the electronic properties and in turn the performance of organic photovoltaics (OPVs), is investigated in order to benefit the polymer synthesis and thin film preparation in OPVs. To establish the correlation between film density and device performance, the density of organic thin films with various treatments was obtained, by two-dimensional X-ray diffraction measurement using the density mapping with respect to the crystallinity of thin films. Our results suggest that the OPV of higher performance has a denser photoactive layer, which may hopefully provide a solution to the question of whether the film density matters in organic electronics, and help to benefit the OPV industry in terms of better polymer design, standardized production, and quality control with less expenditure.

  18. A versatile platform for magnetostriction measurements in thin films (United States)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.


    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  19. Mechanism and characters of thin film lubrication at nanometer scale

    Institute of Scientific and Technical Information of China (English)

    雒建斌; 温诗铸


    Thin film lubrication is a transition region between elastohydrodynamic lubrication and boundary lubrication, A technique of relative optical interference intensity with the resolution of 0.5 nm in the vertical direction and 1.5 nm in the horizontal direction is used in a pure rolling process to measure the film thickness with different lubricants, speeds, loads and substrate surface energy. Experimental data show that the characteristics of thin film lubrication are different from those of elastohydrodynamic lubrication and boundary lubrication. As the rolling speed decreases, a critical film thickness can be found to distinguish thin film lubrication from elastohydrodynamic lubrication. Such thickness is related to the substrate surface energy, atmospheric viscosity of lubricant, etc. A physical model of thin film lubrication with the fluid layer, the ordered liquid layer and the adsorbed layer is proposed and the functions of these different layers are discussed.

  20. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson


    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  1. An overview of thin film nitinol endovascular devices. (United States)

    Shayan, Mahdis; Chun, Youngjae


    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  2. Characterization of reliability of printed indium tin oxide thin films. (United States)

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo


    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  3. Magnetic ordering induced giant optical property change in tetragonal BiFeO3 (United States)

    Tong, Wen-Yi; Ding, Hang-Chen; Gong, Shi Jing; Wan, Xiangang; Duan, Chun-Gang


    Magnetic ordering could have significant influence on band structures, spin-dependent transport, and other important properties of materials. Its measurement, especially for the case of antiferromagnetic (AFM) ordering, however, is generally difficult to be achieved. Here we demonstrate the feasibility of magnetic ordering detection using a noncontact and nondestructive optical method. Taking the tetragonal BiFeO3 (BFO) as an example and combining density functional theory calculations with tight-binding models, we find that when BFO changes from C1-type to G-type AFM phase, the top of valance band shifts from the Z point to Γ point, which makes the original direct band gap become indirect. This can be explained by Slater-Koster parameters using the Harrison approach. The impact of magnetic ordering on band dispersion dramatically changes the optical properties. For the linear ones, the energy shift of the optical band gap could be as large as 0.4 eV. As for the nonlinear ones, the change is even larger. The second-harmonic generation coefficient d33 of G-AFM becomes more than 13 times smaller than that of C1-AFM case. Finally, we propose a practical way to distinguish the two AFM phases of BFO using the optical method, which is of great importance in next-generation information storage technologies.

  4. Reinforced magnetic properties of Ni-doped BiFeO3 ceramic (United States)

    Hwang, J. S.; Yoo, Y. J.; Lee, Y. P.; Kang, J.-H.; Lee, K. H.; Lee, B. W.; Park, S. Y.


    Multiferroic materials attract considerable interest because of the wide range of potential applications such as spintronic devices, data storage devices and sensors. As a strong candidate for the applications among the limited list of single-phase multiferroic materials, BiFeO3 (BFO) is a quite attractive material due to its multiferroic properties at room temperature (RT). However, BFO is widely known to have large leakage current and small spontaneous polarization due to the existence of crystalline defects such as oxygen vacancies. Furthermore, the magnetic moment of pure BFO is very weak owing to its antiferromagnetic nature. In this paper, the effects of Ni2+ substitution on the magnetic properties of bulk BFO were investigated. BFO, and BiFe0.99Ni0.01O3, BiFe0.98Ni0.02O3 and BiFe0.97Ni0.03O3 (BFNO: Ni-doped BFO) ceramics were prepared by solid-state reaction and rapid sintering, and analyzed by structural and magnetic-property measurements. The leakage current density was measured at RT by using a standard ferroelectric tester. All the Ni-doped BFO samples exhibited the similar rhombohedral perovskite structure ( R3c) to that of BFO. The magnetic properties of Ni-doped BFO were much enhanced with respect to BFO prepared at the same conditions, because the enhanced ferromagnetic interaction is caused by the Fe/Ni coupling.

  5. Robust polarization and strain behavior of Sm-modified BiFeO3 piezoelectric ceramics. (United States)

    Walker, Julian; Budic, Bojan; Bryant, Peter; Kurusingal, Valsala; Sorrell, Charles C; Bencan, Andreja; Rojac, Tadej; Valanoor, Nagarajan


    The route to phase-pure BiFeO3 (BFO) ceramics with excellent ferroelectric and electromechanical properties is severely impeded by difficulties associated with the perovskite phase stability during synthesis. This has meant that dopants and solid solutions with BFO have been investigated as a means of not only improving the functional properties, but also of improving the perovskite phase formation of BFO-based ceramics. The present work focuses on Sm-modified BFO ceramics of composition Bi0.88Sm0.12FeO3. The polarization and strain behaviors were investigated as a function of the phase composition, microstructure, and chemical composition. Addition of Sm reduces the susceptibility of the BFO perovskite to phase degradation by Si impurities. Si was observed to react into Sm-rich grains dispersed within the microstructure, with no large increases in the amount of bismuth-parasitic phases, namely Bi25FeO39 and Bi2Fe4O9. These as-prepared ceramics exhibited robust polarization behavior showing maximum remnant polarizations of ~40 to 50 μC/cm(2). The electric-fieldinduced strain showed an appreciable stability in terms of the driving field frequency with maximum peak-to-peak strains of ~0.3% and a coercive field of ~130 kV/cm.

  6. Pyroelectric properties and electrical conductivity in samarium doped BiFeO 3 ceramics

    KAUST Repository

    Yao, Yingbang


    Samarium (Sm 3+) doped BiFeO 3 (BFO) ceramics were prepared by a modified solid-state-reaction method which adopted a rapid heating as well as cooling during the sintering process. The pyroelectric coefficient increased from 93 to 137 μC/m 2 K as the Sm 3+ doping level increased from 1 mol% to 8 mol%. Temperature dependence of the pyroelectric coefficient showed an abrupt decrease above 80 °C in all samples, which was associated with the increase of electrical conductivity with temperature. This electrical conduction was attributed to oxygen vacancy existing in the samples. An activation energy of ∼0.7 eV for the conduction process was found to be irrespective of the Sm 3+ doping level. On the other hand, the magnetic Néel temperature (T N) decreased with increasing Sm 3+ doping level. On the basis of our results, the effects of Sm doping level on the pyroelectric and electrical properties of the BFO were revealed. © 2011 Elsevier Ltd. All rights reserved.

  7. Degradation of Tetracycline with BiFeO3 Prepared by a Simple Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Zhehua Xue


    Full Text Available BiFeO3 particles (BFO were prepared by a simple hydrothermal method and characterized. BFO was pure, with a wide particle size distribution, and was visible light responsive. Tetracycline was chosen as the model pollutant in this study. The pH value was an important factor influencing the degradation efficiency. The total organic carbon (TOC measurement was emphasized as a potential standard to evaluate the visible light photocatalytic degradation efficiency. The photo-Fenton process showed much better degradation efficiency and a wider pH adaptive range than photocatalysis or the Fenton process solely. The optimal residual TOC concentrations of the photocatalysis, Fenton and photo-Fenton processes were 81%, 65% and 21%, while the rate constants of the three processes under the same condition where the best residual TOC was acquired were 9.7 × 10−3, 3.2 × 10−2 and 1.5 × 10−1 min−1, respectively. BFO was demonstrated to have excellent stability and reusability. A comparison among different reported advanced oxidation processes removing tetracycline (TC was also made. Our findings showed that the photo-Fenton process had good potential for antibiotic-containing waste water treatment. It provides a new method to deal with antibiotic pollution.

  8. Reinforced magnetic properties of Ni-doped BiFeO3 ceramic

    CERN Document Server

    Hwang, J S; Kang, J -H; Lee, K H; Lee, B W; Park, S Y; Lee, Y P


    Multiferroic materials attract considerable interest because of the wide range of potential applications such as spintronic devices, data storage and sensors. As a strong candidate for the applications among the limited list of single-phase multiferroic materials, BiFeO3 (BFO) is a quite attractive material due to its multiferroic properties at room temperature (RT). However, BFO is widely known to have large leakage current and small spontaneous polarization due to the existence of crystalline defects such as oxygen vacancies. Furthermore, the magnetic moment of pure BFO is very weak owing to its antiferromagnetic nature. In this paper, the effects of Ni2+ substitution on the magnetic properties of bulk BFO have been investigated. BFO, and BiFe0.99Ni0.01O3, BiFe0.98Ni0.02O3 and BiFe0.97Ni0.03O3 (BFNO: Ni-doped BFO) ceramics were prepared by solid-state reaction and rapid sintering, and analyzed by structural and magnetic-property measurements. The leakage current density was measured at RT by using a standar...

  9. Altering properties of cerium oxide thin films by Rh doping

    Energy Technology Data Exchange (ETDEWEB)

    Ševčíková, Klára, E-mail: [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Nehasil, Václav, E-mail: [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Vorokhta, Mykhailo, E-mail: [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Haviar, Stanislav, E-mail: [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Matolín, Vladimír, E-mail: [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); and others


    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  10. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)


    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  11. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.


    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  12. On Ginzburg-Landau Vortices of Superconducting Thin Films

    Institute of Scientific and Technical Information of China (English)

    Shi Jin DING; Qiang DU


    In this paper, we discuss the vortex structure of the superconducting thin films placed in a magnetic field. We show that the global minimizer of the functional modelling the superconducting thin films has a bounded number of vortices when the applied magnetic field hex < Hc1 + K log |log ε|where Hc1 is the lower critical field of the film obtained by Ding and Du in SIAM J. Math. Anal.,2002. The locations of the vortices are also given.

  13. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan


    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  14. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali


    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  15. The corrosion behavior of nanocrystalline nickel based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Danışman, Murat, E-mail:


    In this study, the effect of Cr addition on corrosion behavior of Ni thin films were investigated. Ni thin films and Ni films with three different Cr content were deposited on glass substrates by magnetron sputtering. After deposition process, thin films with different Cr content were thermally treated in a rapid thermal process system. Phase analysis and grain size calculations of the samples were carried out by X-ray diffraction analysis. In order to reveal corrosion properties, potentiodynamic tests were conducted on samples. Analysis revealed that, although Cr addition to pure-Ni thin films improved their corrosion resistance, occurrence of σ-Cr{sub 3}Ni{sub 2} phase at higher Cr contents increased corrosion rate. The corrosion properties of the samples were also investigated by electrochemical impedance spectroscopy and surface related parameters caused by corrosion reactions were calculated. The analysis revealed that at 55% wt. Cr, rapid ion exchange occurred and highest corrosion current, 23.4 nA cm{sup −2} was observed. - Highlights: • Thin film Ni–Cr samples were deposited on glass substrate. • Effect of Cr addition on corrosion behavior of Ni thin films were investigated. • Potentiodynamic tests and electrochemical impedance spectroscopy methods were used. • Cr content in Ni thin films plays and important role on corrosion. • Up to a certain Cr content, Cr addition reduces corrosion rate.

  16. Patterns and conformations in molecularly thin films (United States)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  17. Determination of magnetic properties of multilayer metallic thin films

    CERN Document Server

    Birlikseven, C


    and magnetization measurements were taken. In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the exper...

  18. Sensing of volatile organic compounds by copper phthalocyanine thin films (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.


    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  19. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail:; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)


    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  20. Characterization of lithium phosphorous oxynitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.


    Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

  1. Nonlinear optics of astaxanthin thin films (United States)

    Esser, A.; Fisch, Herbert; Haas, Karl-Heinz; Haedicke, E.; Paust, J.; Schrof, Wolfgang; Ticktin, Anton


    Carotinoids exhibit large nonlinear optical properties due to their extended (pi) -electron system. Compared to other polyenes which show a broad distribution of conjugation lengths, carotinoids exhibit a well defined molecular structure, i.e. a well defined conjugation length. Therefore the carotinoid molecules can serve as model compounds to study the relationship between structure and nonlinear optical properties. In this paper the synthesis of four astaxanthins with C-numbers ranging from 30 to 60, their preparation into thin films, wavelength dispersive Third Harmonic Generation (THG) measurements and some molecular modelling calculations will be presented. Resonant (chi) (3) values reach 1.2(DOT)10-10 esu for C60 astaxanthin. In the nonresonant regime a figure of merit (chi) (3)/(alpha) of several 10-13 esu-cm is demonstrated.

  2. Photoluminescence studies in epitaxial CZTSe thin films (United States)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne


    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  3. Photodesorption from copper, beryllium, and thin films (United States)

    Foerster, C. L.; Halama, H. J.; Korn, G.

    Ever increasing circulating currents in electron-positron colliders and light sources demand lower and lower photodesportion (PSD) from the surfaces of their vacuum chambers and their photon absorbers. This is particularly important in compact electron storage rings and B meson factories where photon power of several kw cm(exp -1) is deposited on the surfaces. Given the above factors, we have measured PSD from 1 m long bars of solid copper and solid beryllium, and TiN, Au and C thin films deposited on solid copper bars. Each sample was exposed to about 10(exp 23) photons/m with a critical energy of 500 eV at the VUV ring of the NSLS. PSD was recorded for two conditions: after a 200 C bake-out and after an Ar glow discharge cleaning. In addition, we also measured reflected photons, photoelectrons and desorption as functions of normal, 75 mrad, 100 mrad, and 125 mrad incident photons.

  4. Plasma synthesis of photocatalytic TiO x thin films (United States)

    Sirghi, L.


    The development of efficient photocatalytic materials is promising technology for sustainable and green energy production, fabrication of self-cleaning, bactericidal, and super hydrophilic surfaces, CO2 photoreduction, and decomposition of toxic pollutants in air and water. Semiconductors with good photocatalytic activity have been known for four decades and they are regarded as promising candidates for these new technologies. Low-pressure discharge plasma is one of the most versatile technologies being used for the deposition of photocatalytic semiconductor thin films. This article reviews the main results obtained by the author in using low-pressure plasma for synthesis of TiO x thin films with applications in photocatalysis. Titanium dioxide thin films were obtained by radio frequency magnetron sputtering deposition, plasma enhanced chemical vapour deposition, and high power impulse magnetron sputtering deposition. The effects of the plasma deposition method, plasma parameters, film thickness and substrate on the film structure, chemical composition and photocatalytic activity are investigated. The photocatalytic activity of plasma synthesised TiO x thin films was estimated by UV light induced hydrophilicity. Measurements of photocurrent decay in TiO x thin films in vacuum and air showed that the photocatalytic activity is closely connected to the production, recombination and availability for surface reactions of photo-generated charge carriers. The photocatalytic activity of TiO x thin films was investigated at nanoscale by atomic force microscopy. Microscopic regions of different hydrophilicity on UV light irradiated films are discriminated by AFM atomic force microscopy measurements of adhesion and friction force.

  5. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)


    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  6. Orthogonal thin film magnetometer using the anisotropic magnetoresistance effect

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.


    In an orthogonal thin film magnetometer a driving field oriented in the plane of a permalloy film along its hard-axis, saturates this film periodically in positive and negative direction. On return from saturation and in absence of a magnetic field component along the easy-axis, the magnetization in

  7. Reorientation of magnetic anisotropy in obliquely sputtered metallic thin films

    NARCIS (Netherlands)

    Lisfi, A.; Lodder, J.C.; Wormeester, H.; Poelsema, B.


    Reorientation in the magnetic anisotropy as a function of film thickness has been observed in Co-Ni and Co thin films, obliquely sputtered on a polyethylene terephthalate substrate at a large incidence angle (70°). This effect is a consequence of the low magnetocrystalline anisotropy of the films (f

  8. Wettability and photochromic behaviour of Molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Allogho, Guy-Germain, E-mail:; Ashrit, P.V., E-mail:


    The temporal wettability (hydrophobic-hydrophilic) behaviour of thermally evaporated Molybdenum oxide thin films is examined via water droplet contact angle and water droplet lifetime measurements. Super-hydrophilic state is quickly achieved in these films and the rapidity of this conversion depends strongly on the film preparation conditions. It is found that film microstructure, humidity content and UV irradiation have a profound influence on the wettability behaviour of these films. The ensuing photochromic effect under UV irradiation is also followed through the optical changes occurring in the film. Films deposited at higher chamber pressure have a generally smaller initial contact angle and lifetime.

  9. Two approaches for enhancing the hydrogenation properties of palladium: Metal nanoparticle and thin film over layers

    Indian Academy of Sciences (India)

    Manika Khanuja; B R Mehta; S M Shivaprasad


    In the present study, two approaches have been used for enhancing the hydrogenation properties of Pd. In the first approach, metal thin film (Cu, Ag) has been deposited over Pd and hydrogenation properties of bimetal layer Cu (thin film)/Pd(thin film) and Ag(thin film)/Pd(thin film) have been studied. In the second approach, Ag metal nanoparticles have been deposited over Pd and hydrogenation properties of Ag (nanoparticle)/Pd (thin film) have been studied and compared with Ag(thin film)/Pd(thin film) bimetal layer system. The observed hydrogen sensing response is stable and reversible over a number of hydrogen loading and deloading cycles in both bimetallic systems. Alloying between Ag and Pd is suppressed in case of Ag(nanoparticle)/Pd(thin film) bimetallic layer on annealing as compared to Ag (thin film)/Pd(thin film).

  10. Eddy current analysis of thin film recording heads (United States)

    Shenton, D.; Cendes, Z. J.


    Due to inherently thin pole tips which enhance the sharpness of read/write pulses, thin-film magnetic recording heads provide a unique potential for increasing disk file capacity. However, the very feature of these heads which makes them attractive in the recording process, namely, their small size, also makes thin-film heads difficult to study experimentally. For this reason, a finite element simulation of the thin-film head has been developed to provide the magnetic field distribution and the resistance/inductance characteristics of these heads under a variety of conditions. A study based on a one-step multipath eddy current procedure is reported. This procedure may be used in thin film heads to compute the variation of magnetic field with respect to frequency. Computations with the IBM 3370 head show that a large phase shift occurs due to eddy currents in the frequency range 1-10 MHz.

  11. Plasma polymerised thin films for flexible electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Mohan V., E-mail: [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Shanks, Robert A. [Applied Sciences, RMIT University, GPO Box 2476V, Melbourne 3001 (Australia)


    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer.

  12. Organic photo detectors for an integrated thin-film spectrometer (United States)

    Peters, Sabine; Sui, Yunwu; Glöckler, Felix; Lemmer, Uli; Gerken, Martina


    We introduce a thin-film spectrometer that is based on the superprism effect in photonic crystals. While the reliable fabrication of two and three dimensional photonic crystals is still a challenge, the realization of one-dimensional photonic crystals as thin-film stacks is a relatively easy and inexpensive approach. Additionally, dispersive thin-film stacks offer the possibility to custom-design the dispersion profile according to the application. The thin-film stack is designed such that light incident at an angle experiences a wavelength-dependent spatial beam shift at the output surface. We propose the monolithic integration of organic photo detectors to register the spatial beam position and thus determine the beam wavelength. This thin-film spectrometer has a size of approximately 5 mm2. We demonstrate that the output position of a laser beam is determined with a resolution of at least 20 μm by the fabricated organic photo detectors. Depending on the design of the thin-film filter the wavelength resolution of the proposed spectrometer is at least 1 nm. Possible applications for the proposed thin-film spectrometer are in the field of absorption spectroscopy, e.g., for gas analysis or biomedical applications.

  13. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films. (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C


    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  14. Optical properties of rubrene thin film prepared by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    陈亮; 邓金祥; 孔乐; 崔敏; 陈仁刚; 张紫佳


    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evapo-ration technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.

  15. Nanoscale Thin Film Electrolytes for Clean Energy Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nandasiri, Manjula I.; Sanghavi, Rahul P.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai


    Ceria and zirconia based systems can be used as electrolytes to develop solid oxide fuel cells for clean energy production and to prevent air pollution by developing efficient, reliable oxygen sensors. In this study, we have used oxygen plasma assisted molecular beam epitaxy (OPA-MBE) to grow samaria doped ceria (SDC), to understand the role of dopant concentration and geometry of the films towards the ionic conduction in these thin films. We have also discussed the Gd doped CeO2 (GDC) and Gd stabilized ZrO2 (GSZ) multi-layer thin films to investigate the effect of interfacial phenomena on the ionic conductivity of these hetero-structures. We found the optimum concentration to be 15 mol % SmO1.5, for achieving lowest electrical resistance in SDC thin films. The electrical resistance decreases with the increase in film thickness up to 200 nm. The results demonstrate the usefulness of this study towards establishing an optimum dopant concentration and choosing an appropriate thin film thickness to ameliorate the conductance of the SDC material system. Furthermore, we have explored the conductivity of highly oriented GDC and GSZ multi-layer thin films, wherein the conductivity increased with an increase in the number of layers. The extended defects and lattice strain near the interfaces increase the density of oxygen vacancies, which leads to enhanced ionic conductivity in multi-layer thin films.

  16. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)


    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  17. Grain size and film thickness effect on the thermal expansion coefficient of FCC metallic thin films. (United States)

    Hwang, Seulgi; Kim, Youngman


    Thin films are used in wide range of applications in industry, such as solar cells and LEDs. When thin films are deposited on substrates, various stresses are generated due to the mechanical difference between the film and substrate. These stresses can cause defects, such as cracking and buckling. Therefore, knowledge of the mechanical properties is important for improving their reliability and stability. In this study, the thermal expansion coefficient of FCC metallic thin films, such as Ag and Cu, which have different grain sizes and thicknesses, were calculated using the thermal cycling method. As a result, thermal expansion coefficient increased with increasing grain size. However, the film thickness had no remarkable effect.

  18. Buckling of Thin Films in Nano-Scale (United States)

    Wang, S.; Jia, H. K.; Sun, J.; Ren, X. N.; Li, L. A.


    Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  19. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.


    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  20. Nonlinear optical properties of Au/PVP composite thin films

    Institute of Scientific and Technical Information of China (English)

    Shen Hong; Cheng Bo-Lin; Lu Guo-Wei; Wang Wei-Tian; Guan Dong-Yi; Chen Zheng-Hao; Yang Guo-Zhen


    Colloidal Au and poly(vinylpyrrolidone) (PVP) composite thin films are fabricated by spin-coating method. Linear optical absorption measurements of the Au/PVP composite films indicate an absorption peak around 530 nm due to the surface plasmon resonance of gold nanoparticles. Nonlinear optical properties are studied using standard Z-scan technique, and experimental results show large optical nonlinearities of the Au/PVP composite films. A large value of films.

  1. Growth of oriented rare-earth-transition-metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fullerton, E.E.; Sowers, C.H.; Bader, S.D. [Argonne National Lab., IL (United States); Wu, X.Z. [Argonne National Lab., IL (United States)]|[Northern Illinois Univ., DeKalb, IL (United States)


    Rare-earth-transition-metal thin films are successfully grown by magnetron sputtering onto single-crystal MgO substrates with epitaxial W buffer layers. The use of epitaxial W buffer layers allows oriented single-phase films to be grown. Sm-Co films grown onto W(100), have strong in-plane anisotropy and coercivities exceeding 5 T at 5 K whereas Fe-Sm films have strong perpendicular anisotropy and are magnetically soft.

  2. Weakly nonlinear stability of ultra-thin slipping films

    Institute of Scientific and Technical Information of China (English)

    HU Guohui


    A weakly nonlinear theory is presented to study the effects of slippage on the stability of the ultra-thin polymer films.The nonlinear mathematical model is constructed for perturbations of small finite amplitude based on hydrodynamic equations with the long wave approximation. Results reveal that the nonlinearity always accelerates the rupture of the films. The influences of the slip length, film thickness, and initial amplitude of perturbations on the rupture of the films are investigated.

  3. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;


    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness....... The phenomenon is explained in terms of quantum-well states moving through the Fermi level with increasing film thickness....

  4. Lead-free relaxor thin films of tungsten bronze symmetry

    Energy Technology Data Exchange (ETDEWEB)

    Michau, D; Simon, A; Maglione, M, E-mail: d.michau@icmcb-bordeaux.cnrs.f [CNRS, Universite de Bordeaux, ICMCB, 87 Avenue Dr Schweitzer, Pessac, F-33608 (France)


    We have processed Ba{sub 1+x/2}LaNb{sub 5-x}Ti{sub x}O{sub 15} thin films using radio-frequency magnetron sputtering. Using XRD, SEM, x-ray microprobe and RBS, the polycrystalline films have been optimized as to reach the nominal composition. Dielectric experiments have been performed on ceramics and thin films for frequencies between 100 Hz and 5 MHz in the temperature range 100-420 K. In the most stoichiometric films, relaxor behaviour is evidenced whose features are similar to those of ceramics of the same composition. Such an agreement between ceramics and thin films relaxors is only rarely reported in lead-free materials. Moreover, the relaxor state was reported in perovskite films and our present report broadens the range of structures in which it can occur.

  5. Novel phthalocyanine thin film for compact disc recordable

    Institute of Scientific and Technical Information of China (English)

    Yongyou Geng(耿永友); Donghong Gu(顾冬红); Yiqun Wu(吴谊群); Fuxi Gan(干福熹)


    In this paper, the spin-coated thin films of phthalocyanine dye are presented. Absorption spectrum ofthe thin film shows a comparatively broad absorption in the wavelength range 630 - 770 nm. Opticalparameters of the thin film were measured by a spectroscopic ellipsometer system. 5-in CD-R discs madeof this dye exhibit good performance with Yamaha 20-speed recorder. Jitters of land and pit are less than30 ns, and the 3T-11T's signals show very good quality. This dye is a promising recording medium forCD-R with much higher recording speed.

  6. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez


    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  7. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI


    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  8. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro


    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  9. Organic nanostructured thin film devices and coatings for clean energy

    CERN Document Server

    Zhang, Sam


    Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy. This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the proc

  10. Thin-film organic photonics molecular layer deposition and applications

    CERN Document Server

    Yoshimura, Tetsuzo


    Among the many atomic/molecular assembling techniques used to develop artificial materials, molecular layer deposition (MLD) continues to receive special attention as the next-generation growth technique for organic thin-film materials used in photonics and electronics. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications describes how photonic/electronic properties of thin films can be improved through MLD, which enables precise control of atomic and molecular arrangements to construct a wire network that achieves ""three-dimensional growth"". MLD facilitates dot-by-dot--o

  11. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)


    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  12. Development of Thin Film Ceramic Thermocouples for High Temperature Environments (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Farmer, Serene C.; Sayir, Ali; Blaha, Charles A.; Gonzalez, Jose M.


    The maximum use temperature of noble metal thin film thermocouples of 1100 C (2000 F) may not be adequate for use on components in the increasingly harsh conditions of advanced aircraft and next generation launch technology. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically found in the form of rods or probes. NASA Glenn Research Center is investigating the feasibility of ceramics as thin film thermocouples for extremely high temperature applications to take advantage of the stability and robustness of ceramics and the non-intrusiveness of thin films. This paper will discuss the current state of development in this effort.

  13. Electrical Control of Antiferromagnetic Domains in Multiferroic BiFeO3 Films at Room Temperature (United States)


    Source, Lawrence Berkeley National Lab, Berkeley, California 94720, USA 3Centro de Ciencias de la Materia Condensada (CCMC)-UNAM Km 107, Carretera...b. ABSTRACT unclassified c. THIS PAGE unclassified Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18 ARTICLES O Fe Bi 18 0° 109° 71...antiferromagnetic ordering is G-type; that is nearest- neighbour Fe moments are aligned antiparallel to each other in all three cartesian directions13. In bulk

  14. RETRACTED: Transverse photovoltaic effect of tetragonal BiFeO3 films (United States)

    Gao, R. L.; Zhang, H. R.; Fu, C. L.; Cai, W.; Chen, G.; Deng, X. L.; Sun, J. R.


    This article has been retracted: please see Elsevier Policy on Article Withdrawal. This article has been retracted at the request of the corresponding author. The corresponding author contacted the journal to report measurement errors in Figures 1b and 1c that have been found after the article publication. Also the corresponding author did not ask permission to the co-authors, who were not aware of the submission and publication of this article. After the article was published, some of the co-authors requested to withdraw this article

  15. Nanoscale phenomena in ferroelectric thin films (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  16. Structural, dielectric and multiferroic properties of Er and La substituted BiFeO3 ceramics

    Indian Academy of Sciences (India)

    Pragya Pandit; S Satapathy; Poorva Sharma; P K Gupta; S M Yusuf; V G Sathe


    Erbium (Er) and lanthanum (La) substituted BiFeO3 (BFO) ceramics have been prepared through conventional solid solution route. X-ray diffraction data indicated a gradual phase transition from rhombohedral to monoclinic structure in Bi0.9– La0.1Er FeO3 ( = 0.05, 0.07 and 0.1) (BLEFO = 0.05, 0.07,0.1) ceramics. Differential thermal analysis (DTA) measurements of BFO samples showed a ferroelectric transition at 835°C, whereas it is shifted to 792°C for BLEFO = 0.1. The Raman spectra of BLEFO = 0.05,0.07,0.1 samples showed the shift of Raman modes to higher wavenumbers and suppression of A1 modes indicating decrease in ferroelectricity. The Raman spectra also indicated the structural transformation due to Er and La substitution in BFO. On subsequent erbium doping, the intrinsic dielectric constant is found to decrease from 68 (for pure BFO) to 52 for BLEFO = 0.05 to 43 for BLEFO = 0.07 but increased to 89 for BLEFO = 0.1 when compared to pure BFO. The increase in Er content resulted in the increase in spontaneous magnetization (0.1178 emu/g at 8T for BLEFO = 0.1) due to collapse of spin cycloid structure. Ferroelectric remnant polarization of BLEFO = 0.05 and BLEFO = 0.07 decreases when compared to pure BFO while small remnant polarization (close to paraelectric behaviour) is evident for BLEFO = 0.1.

  17. Process compilation methods for thin film devices (United States)

    Zaman, Mohammed Hasanuz

    This doctoral thesis presents the development of a systematic method of automatic generation of fabrication processes (or process flows) for thin film devices starting from schematics of the device structures. This new top-down design methodology combines formal mathematical flow construction methods with a set of library-specific available resources to generate flows compatible with a particular laboratory. Because this methodology combines laboratory resource libraries with a logical description of thin film device structure and generates a set of sequential fabrication processing instructions, this procedure is referred to as process compilation, in analogy to the procedure used for compilation of computer programs. Basically, the method developed uses a partially ordered set (poset) representation of the final device structure which describes the order between its various components expressed in the form of a directed graph. Each of these components are essentially fabricated "one at a time" in a sequential fashion. If the directed graph is acyclic, the sequence in which these components are fabricated is determined from the poset linear extensions, and the component sequence is finally expanded into the corresponding process flow. This graph-theoretic process flow construction method is powerful enough to formally prove the existence and multiplicity of flows thus creating a design space {cal D} suitable for optimization. The cardinality Vert{cal D}Vert for a device with N components can be large with a worst case Vert{cal D}Vert≤(N-1)! yielding in general a combinatorial explosion of solutions. The number of solutions is hence controlled through a-priori estimates of Vert{cal D}Vert and condensation (i.e., reduction) of the device component graph. The mathematical method has been implemented in a set of algorithms that are parts of the software tool MISTIC (Michigan Synthesis Tools for Integrated Circuits). MISTIC is a planar process compiler that generates

  18. Electrochromic performances of nonstoichiometric NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moulki, H.; Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Mihelčič, M.; Vuk, A. Šurca [National Institute of Chemistry, NIC, Hajdrihova 19, SI-1000 Ljubljana (Slovenia); Švegl, F. [Amanova Ltd., Tehnološki Park 18, SI-1000 Ljubljana (Slovenia); Orel, B. [National Institute of Chemistry, NIC, Hajdrihova 19, SI-1000 Ljubljana (Slovenia); Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Alfredsson, M.; Chadwick, A.V. [Functional Materials Group, School of Physical Sciences, University of Kent, Canterbury, Kent CT2 7NH (United Kingdom); Gianolio, D. [Diamond Light Source Ltd., Harwell Science and Innovation Campus, OX11 0DE Didcot (United Kingdom); Rougier, A., E-mail: [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)


    Electrochromic (EC) performances of Ni{sup 3+} containing NiO thin films, called modified NiO thin films, prepared either by pulsed laser deposition or by chemical route are reported. When cycled in lithium based electrolyte, the comparison of the EC behavior of nonstoichiometric NiO thin films points out a larger optical contrast for the films synthesized by chemical route with the absence of an activation period on early electrochemical cycling due in particular to a larger porosity. Herein we demonstrate faster kinetics for modified NiO thin films cycled in lithium ion free electrolyte. Finally, X-ray absorption spectroscopy is used for a preliminary understanding of the mechanism involved in this original EC behavior linked to the film characteristics including their disorder character, the presence of Ni{sup 3+} and their porous morphology. - Highlights: • Nonstoichiometric NiO thin films • Electrochromic performances in lithium free electrolyte • X-ray absorption spectroscopy investigation of as-deposited films and upon cycling.

  19. Stress in Thin Films; Diffraction Elastic Constants and Grain Interaction

    Institute of Scientific and Technical Information of China (English)


    Untextured bulk polycrystals usually possess macroscopically isotropic elastic properties whereas for most thin films transverse isotropy is expected, owing to the limited dimensionality. The usually applied models for the calculation of elastic constants of polycrystals from single crystal elastic constants (so-called grain interaction models) erroneously predict macroscopic isotropy for an (untextured) thin film. This paper presents a summary of recent work where it has been demonstrated for the first time by X-ray diffraction analysis of stresses in thin films that elastic grain interaction can lead to macroscopically elastically anisotropic behaviour (shown by non-linear sin2ψ plots). A new grain interaction model, predicting the macroscopically anisotropic behaviour of thin films, is proposed.

  20. Rip-Stop Reinforced Thin Film Sun Shield Structure Project (United States)

    National Aeronautics and Space Administration — During a proposed Phase I and Phase II program, PSI will advance the TRL from 3 to 6 for the ripstop reinforcement of thin film membranes used for large deployable...

  1. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal


    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  2. Hydrogenation Effect on Mg/Co Multilayer Thin Films

    Directory of Open Access Journals (Sweden)

    M. K. JANGID


    Full Text Available Multilayer Mg/Co thin films have been prepared using thermal evaporation method at pressure 10-5torr. Annealing of structure has been performed in atmospheric condition at 600 K constant temperature for one hour. Hydrogenation of annealed thin films has been performed by keeping these in hydrogenation cell at different hydrogen pressures for 30 min. The UV–VIS absorption spectra of thin films have been carried out at room temperature in the wavelength range of 300–800 nm. The optical band gap was found to be increase and conductivity has been found to be decreased with hydrogen pressure. The relative resistivity varies nonlinearly with time and increases with hydrogen pressure. Raman spectra of these sample shows decreasing intensity of peaks with hydrogenation. These results suggested that multilayer Mg/Co thin films structures can be used for hydrogen storage as well as solar collector materials.

  3. Comparison of metallization systems for thin film hybrid microcircuits

    Energy Technology Data Exchange (ETDEWEB)

    Hines, R.A.; Raut, M.K.


    Five metallization systems were evaluated for fabricating thin film hybrid microcircuits. The titanium/palladium/electroplated gold system proved superior in terms of thermocompression bondability, corrosion resistance, and solderability.

  4. Modeling plasmonic scattering combined with thin-film optics. (United States)

    Schmid, M; Klenk, R; Lux-Steiner, M Ch; Topic, M; Krc, J


    Plasmonic scattering from metal nanostructures presents a promising concept for improving the conversion efficiency of solar cells. The determination of optimal nanostructures and their position within the solar cell is crucial to boost the efficiency. Therefore we established a one-dimensional optical model combining plasmonic scattering and thin-film optics to simulate optical properties of thin-film solar cells including metal nanoparticles. Scattering models based on dipole oscillations and Mie theory are presented and their integration in thin-film semi-coherent optical descriptions is explained. A plasmonic layer is introduced in the thin-film structure to simulate scattering properties as well as parasitic absorption in the metal nanoparticles. A proof of modeling concept is given for the case of metal-island grown silver nanoparticles on glass and ZnO:Al/glass substrates. Using simulations a promising application of the nanoparticle integration is shown for the case of CuGaSe(2) solar cells.

  5. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)


    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  6. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)


    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  7. Light waves in thin films and integrated optics. (United States)

    Tien, P K


    Integrated optics is a far-reaching attempt to apply thin-film technology to optical circuits and devices, and, by using methods of integrated circuitry, to achieve a better and more economical optical system. The specific topics discussed here are physics of light waves in thin films, materials and losses involved, methods of couplings light beam into and out of a thin film, and nonlinear interactions in waveguide structures. The purpose of this paper is to review in some detail the important development of this new and fascinating field, and to caution the reader that the technology involved is difficult because of the smallness and perfection demanded by thin-film optical devices.

  8. Drop impact on thin liquid films using TIRM (United States)

    Pack, Min; Ying Sun Team


    Drop impact on thin liquid films is relevant to a number of industrial processes such as pesticide spraying and repellent surface research such as self-cleaning applications. In this study, we systematically investigate the drop impact dynamics on thin liquid films on plain glass substrates by varying the film thickness, viscosity and impact velocity. High speed imaging is used to track the droplet morphology and trajectory over time as well as observing instability developments at high Weber number impacts. Moreover, the air layer between the drop and thin film upon drop impact is probed by total internal reflection microscopy (TIRM) where the grayscale intensity is used to measure the air layer thickness and spreading radius over time. For low We impact on thick films (We ~ 10), the effect of the air entrainment is pronounced where the adhesion of the droplet to the wall is delayed by the air depletion and liquid film drainage, whereas for high We impact (We >100) the air layer is no longer formed and instead, the drop contact with the wall is limited only to the film drainage for all film thicknesses. In addition, the maximum spreading radius of the droplet is analyzed for varying thin film thickness and viscosity.

  9. Crystalline Indium Sulphide thin film by photo accelerated deposition technique (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.


    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  10. Nanoindentation and Adhesion Properties of Ta Thin Films

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen


    Full Text Available Ta films were sputtered onto a glass substrate with thicknesses from 500 Å to 1500 Å under the following conditions: (a as-deposited films were maintained at room temperature (RT, (b films were postannealed at TA=150°C for 1 h, and (c films were postannealed at TA=250°C for 1 h. X-ray diffraction (XRD results revealed that the Ta films had a body-centered cubic (BCC structure. Postannealing conditions and thicker Ta films exhibited a stronger Ta (110 crystallization than as-deposited and thinner films. The nanoindention results revealed that Ta thin films are sensitive to mean grain size, including a valuable hardness (H and Young’s modulus (E. High nanomechanical properties of as-deposited and thinner films can be investigated by grain refinement, which is consistent with the Hall-Petch effect. The surface energy of as-deposited Ta films was higher than that in postannealing treatments. The adhesion of as-deposited Ta films was stronger than postannealing treatments because of crystalline degree effect. The maximal H and E and the optimal adhesion of an as-deposited 500-Å-thick Ta film were 15.6 GPa, 180 GPa, and 51.56 mJ/mm2, respectively, suggesting that a 500-Å-thick Ta thin film can be used in seed and protective layer applications.

  11. Scanned probe microscopy for thin film superconductor development

    Energy Technology Data Exchange (ETDEWEB)

    Moreland, J. [National Institute of Standards and Technology, Boulder, CO (United States)


    Scanned probe microscopy is a general term encompassing the science of imaging based on piezoelectric driven probes for measuring local changes in nanoscale properties of materials and devices. Techniques like scanning tunneling microscopy, atomic force microscopy, and scanning potentiometry are becoming common tools in the production and development labs in the semiconductor industry. The author presents several examples of applications specific to the development of high temperature superconducting thin films and thin-film devices.

  12. Thin-film limit formalism applied to surface defect absorption


    Holovsky, Jakub; Ballif, Christophe


    The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e. g. on a top of a layer of amorphous silicon. We develop a new method o...

  13. Electrical characterization Of SiGe thin films



    An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, gro...

  14. Low temperature Hall effect in bismuth chalcogenides thin films


    Kuntsevich, A. Yu.; Gabdullin, A. A.; Prudkogliad, V. A.; Selivanov, Yu. G.; Chizhevskii, E. G.; Pudalov, V. M.


    Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenologi...

  15. Nonlinear Absorption Properties of nc-Si:H Thin Films

    Institute of Scientific and Technical Information of China (English)

    GUO Zhenning; GUO Hengqun; LI Shichen; HUANG Yongzhen; WANG Qiming


    It is reported in this paper that the phenomenon of the saturated absorption of the exciton in hydrogenated nanocrystalline silicon (nc-Si:H) thin film fabricated by plasma enhanced chemical vapor deposition (PECVD) without any post-processing is observed at room temperature using pump-probe technology. This nonlinear optical absorption property is induced by the surface effect of the silicon nanoparticles in nc-Si:H thin films.

  16. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier


    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  17. Form Birefringence in Thin Films with Oblique Columnar Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Jian-Guo; SHAO Jian-Da; WANG Su-Mei; HE Hong-Bo; FAN Zheng-Xiu


    @@ Effective medium theory is useful for designing optical elements with form birefringent subwavelength structures. Thinfilms fabricated by oblique deposition are similar to the two-dimensional surface relief subwavelength gratings. We use the effective medium theory to calculate the anisotropic optical properties of the thin films with oblique columnar structures. The effective refractive indices and the directions are calculated from effective medium theory. It is shown that optical thin films with predetermined refractive indices and birefringence may be engineered.

  18. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José


    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  19. Metallic glass thin films for potential biomedical applications. (United States)

    Kaushik, Neelam; Sharma, Parmanand; Ahadian, Samad; Khademhosseini, Ali; Takahashi, Masaharu; Makino, Akihiro; Tanaka, Shuji; Esashi, Masayoshi


    We introduce metallic glass thin films (TiCuNi) as biocompatible materials for biomedical applications. TiCuNi metallic glass thin films were deposited on the Si substrate and their structural, surface, and mechanical properties were investigated. The fabricated films showed good biocompatibility upon exposure to muscle cells. Also, they exhibited an average roughness of films was shown to be free from Ni and mainly composed of a thin titanium oxide layer, which resulted in the high surface biocompatibility. In particular, there was no cytotoxicity effect of metallic glass films on the C2C12 myoblasts and the cells were able to proliferate well on these substrates. Low cost, viscoelastic behavior, patternability, high electrical conductivity, and the capability to coat various materials (e.g., nonbiocompatible materials) make TiCuNi as an attractive material for biomedical applications.

  20. Review of Zinc Oxide Thin Films (United States)


    oriented ZnO:Ga thin  films  deposited  on  glass  by  laser   ablation   at  different  deposition  temperatures.  The  surface  morphology,  crystalline...resistivity  value  (7  ×  10‐4  Ωcm)  in  200  nm  thickness  samples  deposited  on  glass  substrate by  laser   ablation  at 300 oC.    Highly  conducting...number, and atomic  arrangements of  metal   cations  in  crystalline or  amorphous oxide  structures, on  the  resident  morphology, and on the presence of

  1. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne


    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  2. Thin films of xyloglucans for BSA adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Jo, T.A. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Petri, D.F.S. [Institute of Chemistry, University of Sao Paulo, Sao Paulo, SP (Brazil); Valenga, F. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Lucyszyn, N. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Sierakowski, M.-R. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil)], E-mail:


    In this work, XG extracted from Tamarindus indica (XGT) and Copaifera langsdorffii (XGC) seeds were deposited onto Si wafers as thin films. The characteristics of XGT and XGC adsorbed layers were compared with a commercial XG sample (TKP, Tamarind kernel powder) by ellipsometry and atomic force microscopy (AFM). Moreover, the adsorption of oxidized derivative of XGT (To60) onto amino-terminated Si wafers and the immobilization of bovine serum albumin (BSA) onto polysaccharides covered wafers, as a function of pH, were also investigated. The XG samples presented molar ratios Glc:Xyl:Gal of 2.4:2.1:1 (XGC); 2.8: 2.3: 1 (XGT) and 1.9:1.9:1 (TKP). The structure of XGT and XGC was determined by O-methy alditol acetate derivatization and showed similar features, but XGC confirmed the presence of more {alpha}-D-Xyl branches due to more {beta}-D-Gal ends. XGT deposited onto Si adsorbed as fibers and small entities uniformly distributed, as evidenced by AFM, while TPK and XGC formed larger aggregates. The thickness of To60 onto amino-terminated surface was similar to that determined for XGT onto Si wafers. A maximum in the adsorbed amount of BSA occurred close to its isoelectric point (5.5). These findings indicate that XGT and To60 are potential materials for the development of biomaterials and biotechnological devices.

  3. Thin Film Photovoltaics: Markets and Industry

    Directory of Open Access Journals (Sweden)

    Arnulf Jäger-Waldau


    Full Text Available Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for solar modules. Prices for photovoltaic electricity generation systems have more than halved over the last five years making the technology affordable to an ever-increasing number of customers worldwide. With worldwide over 60 GW cumulative installed photovoltaic electricity generation capacity installed in November 2011, photovoltaics still is a small contributor to the electricity supply, and another 10 to 15 years of sustained and aggressive growth will be required for photovoltaic solar electricity to become one of the main providers of electricity. To achieve this, a continuous improvement of the current solar cell technologies will be necessary.

  4. Degradation analysis of thin film photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C., E-mail: [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)


    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  5. Electrophysical Properties of Nanocrysyalline Platinum Thin Films

    Directory of Open Access Journals (Sweden)

    K.V. Tyschenko


    Full Text Available The results of research structural and phase state, termoresistive properties (resistivity, temperature coefficient of resistance (TCR in the range of temperature ΔТа = 300-630 К and tensoresistive properties (gauge factor in the range of deformation Δεl1 = (0-1 %, Δεl2 = (0-2 % were presented. Thin films Pt have fcc structure with lattice parameter ā = 0,390 nm after condensation and annealing. The temperature dependences characterized by relatively large value of resistivity (ρ ~ 10 – 7 Ohm·m and relatively small value of TCR (β ~ 10 – 4 K – 1 respectively. Strain properties characterized by a wide interval of elastic deformation (more than 1 %. The deformation coefficient of electron mean free path (λ0 ηλ0l ≈ 9 and changing electron mean free path Δλ0 ≈ = 2 nm were calculated.

  6. DC Leakage behavior and Conduction Mechanism in (BiFeO3)m(SrTiO3)m Superlattices



    Leakage current behavior of (BiFeO3)m(SrTiO3)m superlattice structures was studied and analyzed at different temperatures (303-473K) in the light of various models. While bulk limited Poole-Frenkel emission was observed to dominate the leakage current in the temperature range of 303 - 383 K, the space charge limited conduction was observed up to 473 K. With a Poole-Frenkel emission type of conduction, the activation energy range of 0.06 - 0.2 eV was calculated. The physical parameters, calcul...

  7. PEDOT:PSS thin film for photovoltaic application

    Directory of Open Access Journals (Sweden)

    J. Weszka


    Full Text Available Purpose: The aim of this paper was to investigate changes in surface morphology and optical parameters of thin films of poly(3,4-ethylenedioxythiophene poly(styrenesulfonate (PEDOT:PSS. Thin films were prepared using spin coating method. Design/methodology/approach: The thin films of PEDOT:PSS was investigate by Raman scattering technique in Raman spectrometer. The changes in surface topography were observed with the atomic force microscope AFM XE-100. The results of roughness have been prepared in the software XEI Park Systems. The measurement of optical parameter was performed using spectrometer UV/VIS and spectroscopic ellipsometer. Findings: Results and their analysis allow to conclude that the PEDOT:PSS solution concentration and spin speed, an important factor in spin coating technology, have a significant influence on surface morphology and optical reflection of thin films. Practical implications: Knowledge about the sol gel PEDOT:PSS optical parameters and the possibility of obtaining a uniform thin films show that it can be good material for photovoltaic and optoelectronic devices. Originality/value: The paper presents some researches of PEDOT:PSS thin films deposited by spin coating method on glass substrate

  8. Methods for preparing colloidal nanocrystal-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.


    Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

  9. Characterization of polymer thin films obtained by pulsed laser deposition (United States)

    Palla-Papavlu, A.; Dinca, V.; Ion, V.; Moldovan, A.; Mitu, B.; Luculescu, C.; Dinescu, M.


    The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate). The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. It was found that for laser fluences up to 1.5 J/cm 2 the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm 2 the polyepichlorohydrin films present deviations from the bulk polymer. Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm 2). The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material. The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.

  10. Temperature effect on elastic modulus of thin films and nanocrystals (United States)

    Liang, Lihong; Li, Meizhi; Qin, Fuqi; Wei, Yueguang


    The stability of nanoscale devices is directly related to elasticity and the effect of temperature on the elasticity of thin films and nanocrystals. The elastic instability induced by rising temperature will cause the failure of integrated circuits and other microelectronic devices in service. The temperature effect on the elastic modulus of thin films and nanocrystals is unclear although the temperature dependence of the modulus of bulk materials has been studied for over half a century. In this paper, a theoretical model of the temperature-dependent elastic modulus of thin films and nanocrystals is developed based on the physical definition of the modulus by considering the size effect of the related cohesive energy and the thermal expansion coefficient. Moreover, the temperature effect on the modulus of Cu thin films is simulated by the molecular dynamics method. The results indicate that the elastic modulus decreases with increasing temperature and the rate of the modulus decrease increases with reducing thickness of thin films. The theoretical predictions based on the model are consistent with the results of computational simulations, semi-continuum calculations and the experimental measurements for Cu, Si thin films and Pd nanocrystals.

  11. Determination of Selected Material Properties of Castable Thin Film Polyimides for Applications in Solar Thermal Propulsion (United States)

    Paxton, James P.


    Partial contents; This Study will, WHat is a thin film?, An application of Thin Film polyimides, Typical Solar Thermal Rocket Configuration, Benefits of 6FDA +APB Thin Films, Design Parameters for Articles constructed with thin film polyimides, theory, thin film test apparatus, unlaxial test appartus, toggle grip design, computer test panel, experimental procedure, Modulus of Elasticity results, Coefficient of Thermal Expansion results, Conclusions and Recommendations, Acknowledgement.

  12. Strain-mediated electric-field control of exchange bias in a Co90Fe10/BiFeO3/SrRuO3/PMN-PT heterostructure (United States)

    Wu, S. Z.; Miao, J.; Xu, X. G.; Yan, W.; Reeve, R.; Zhang, X. H.; Jiang, Y.


    The electric-field (E-field) controlled exchange bias (EB) in a Co90Fe10/BiFeO3 (BFO)/SrRuO3/PMN-PT heterostructure has been investigated under different tensile strain states. The in-plane tensile strain of the BFO film is changed from +0.52% to +0.43% as a result of external E-field applied to the PMN-PT substrate. An obvious change of EB by the control of non-volatile strain has been observed. A magnetization reversal driven by E-field has been observed in the absence of magnetic field. Our results indicate that a reversible non-volatile E-field control of a ferromagnetic layer through strain modulated multiferroic BFO could be achieved at room temperature.

  13. Emergent topological phenomena in thin films of pyrochlore iridates. (United States)

    Yang, Bohm-Jung; Nagaosa, Naoto


    Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

  14. Semiconducting properties of Al doped ZnO thin films. (United States)

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F


    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  15. Electronegativity-dependent tin etching from thin films

    NARCIS (Netherlands)

    Pachecka, M.; Sturm, J.M.; Kruijs, van de R.W.E.; Lee, C.J.; Bijkerk, F.


    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electron

  16. Characterization of thin films using generalized lamb wave dispersion relations


    Richard, P; Behrend, O.; Gremaud, G.; Kulik, A.


    We used the Continuous Wave Scanning Acoustic Microscope to characterize thin film materials. The measurement of the dispersion curve of surface waves and the inversion of this dispersion equation relation, allow to determine the elastic constants, the density or the thickness of a thin layer on a substrate. Besides, it is possible to have qualitative information on the adhesion properties of the layer.

  17. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole


    Several studies have indicated that broadband absorption of thin-film solar cells can be enhanced by use of surface-plasmon induced resonances of metallic parts like strips or particles. The metallic parts may create localized modes or scatter incoming light to increase absorption in thin...

  18. Front and backside processed thin film electronic devices (United States)

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.


    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  19. Reorientation of magnetic anisotropy in epitaxial cobalt ferrite thin films

    NARCIS (Netherlands)

    Lisfi, A.; Williams, C.M.; Nguyen, L.T.; Lodder, J.C.; Coleman, A.; Corcoran, H.; Johnson, A.; Chang, P.; Kumar, A.; Morgan, W.


    Spin reorientation has been observed in CoFe2O4 thin single crystalline films epitaxially grown on (100) MgO substrate upon varying the film thickness. The critical thickness for such a spin-reorientation transition was estimated to be 300 nm. The reorientation is driven by a structural transition

  20. Magnetic properties of electrodeposited Co-W thin films

    NARCIS (Netherlands)

    Admon, U.; Dariel, M.P.; Grunbaum, E.; Lodder, J.C.


    Thin films of Co-W, 300-500 Å thick, were electrodeposited at various compositions under a wide range of plating conditions. The saturation magnetization, coercivity, and squareness ratio of the films were derived from the parallel (in-plane) and perpendicular hysteresis loops, measured by using a v