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Sample records for bicrystalline primary si

  1. Mechanistic Selection and Growth of Twinned Bicrystalline Primary Si in Near Eutectic Al-Si Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Choonho [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    Morphological evolution and selection of angular primary silicon is investigated in near-eutectic Al-Si alloys. Angular silicon arrays are grown directionally in a Bridgman furnace at velocities in the regime of 10-3 m/sec and with a temperature gradient of 7.5 x 103 K/m. Under these conditions, the primary Si phase grows as an array of twinned bicrystalline dendrites, where the twinning gives rise to a characteristic 8-pointed star-shaped primary morphology. While this primary Si remains largely faceted at the growth front, a complex structure of coherent symmetric twin boundaries enables various adjustment mechanisms which operate to optimize the characteristic spacings within the primary array. In the work presented here, this primary silicon growth morphology is examined in detail. In particular, this thesis describes the investigation of: (1) morphological selection of the twinned bicrystalline primary starshape morphology; (2) primary array behavior, including the lateral propagation of the starshape grains and the associated evolution of a strong <100> texture; (3) the detailed structure of the 8-pointed star-shaped primary morphology, including the twin boundary configuration within the central core; (4) the mechanisms of lateral propagation and spacing adjustment during array evolution; and (5) the thermosolutal conditions (i.e. operating state) at the primary growth front, including composition and phase fraction in the vicinity of the primary tip.

  2. Void Growth in Single and Bicrystalline Metals: Atomistic Calculations

    Science.gov (United States)

    Traiviratana, Sirirat; Bringa, Eduardo M.; Benson, David J.; Meyers, Marc A.

    2007-12-01

    MD simulations in monocrystalline and bicrystalline copper were carried out with LAMMPS to reveal void growth mechanisms. The specimens were subjected to both tensile uniaxial and hydrostatic strains; the results confirm that the emission of (shear) loops is the primary mechanism of void growth. However, these shear loops develop along two slip planes (and not one, as previously thought), in a heretofore unidentified mechanism of cooperative growth. The emission of dislocations from voids is the first stage, and their reaction and interaction is the second stage. These loops, forming initially on different {111} planes, join at the intersection, the Burgers vector of the dislocations being parallel to the intersection of two {111} planes: a direction. Thus, the two dislocations cancel at the intersection and a biplanar shear loop is formed. The expansion of the loops and their cross slip leads to the severely work hardened layer surrounding a growing void. Calculations were carried out on voids with different sizes, and a size dependence of the stress response to emitted dislocations was observed, in disagreement with the Gurson model[1] which is scale independent. Calculations were also carried out for a void at the interface between two grains.

  3. Size effects in Al nanopillars: Single crystalline vs. bicrystalline

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    Kunz, Allison; Pathak, Siddhartha [Division of Engineering and Applied Sciences, California Institute of Technology, 1200 East California Boulevard, MC 309-81, Pasadena, CA 91125-8100 (United States); Greer, Julia R., E-mail: jrgreer@caltech.edu [Division of Engineering and Applied Sciences, California Institute of Technology, 1200 East California Boulevard, MC 309-81, Pasadena, CA 91125-8100 (United States)

    2011-06-15

    The mechanical behavior of bicrystalline aluminum nano-pillars under uniaxial compression reveals size effects, a stochastic stress-strain signature, and strain hardening. Pillar diameters range from 400 nm to 2 {mu}m and contain a single, non-sigma high angle grain boundary oriented parallel to the pillar axes. Our results indicate that these bicrystalline pillars are characterized by intermittent strain bursts and exhibit an identical size effect to their single crystalline counterparts. Further, we find that the presence of this particular grain boundary generally decreases the degree of work hardening relative to the single crystalline samples. These findings, along with transmission electron microscopy analysis, show that nano-pillar plasticity in the presence of a grain boundary is also characterized by dislocation avalanches, likely resulting from dislocation nucleation-controlled mechanisms, and that at these small length scales this grain boundary may serve as a dislocation sink rather than a dislocation source.

  4. The influence of tilt grain boundaries on the mechanical properties of bicrystalline graphene nanoribbons

    Science.gov (United States)

    Xu, Na; Guo, Jian-Gang; Cui, Zhen

    2016-10-01

    The mechanical properties of bicrystalline graphene nanoribbons with various tilt grain boundaries (GBs) which typically consist of repeating pentagon-heptagon ring defects are investigated based on the method of molecular structural mechanics. The GB models are constructed via the theory of disclinations in crystals, and the elastic properties and ultimate strength of bicrystalline graphene nanoribbons are calculated under uniaxial tensile loads in perpendicular and parallel directions to grain boundaries. The dependence of mechanical properties is analyzed on the chirality and misorientation angles of graphene nanoribbons, and the experimental phenomena that Young's modulus and ultimate strength of bicrystalline graphene nanoribbons can either increase or decrease with the grain boundary angles are further verified and discussed. In addition, the influence of GB on the size effects of graphene Young's modulus is also analyzed.

  5. Synthesis and Optical Properties of Silver Bicrystalline Nanowires

    Science.gov (United States)

    Sun, Yugang; Xia, Younan

    2002-11-01

    This paper describes a solution-phase route to the large-scale synthesis of silver nanowires with diameters in the range of 30-40 nm, and lengths up to ~50 μm. The initial step of this synthesis involved the formation of Pt nanoparticles by reducing PtCl2 with ethylene glycol (EG) refluxed at ~160 °C. These Pt nanoparticles could serve as seeds for the growth of silver (formed by reducing AgNO3 with EG) through heterogeneous nucleation process because their crystal structures and lattice constants matched closely. In the presence of poly(vinyl pyrrolidone) (PVP), the growth of silver could be led to a highly anisotropic mode with formation of uniform nanowires. UV-visible spectroscopy was used to track the growth process of silver nanowires because different silver nanostructures exhibited distinctive surface plasmon resonance peaks at different frequencies. SEM, TEM, XRD, and electron diffraction were used to characterize these silver nanowires, indicating the formation of a highly pure face-centered cubic phase, as well as uniform diameter and bicrystalline structure. The morphology of these silver nanostructures could be varied from particles and rods to long wires by tuning the reaction conditions, including reaction temperature, and the ratio of PVP to silver nitrate. These silver nanowires could be used as sacrificial templates to synthesize gold nanotubes via a template-engaged replacement reaction. The dispersion of gold nanotubes exhibited a strong extinction peak in the red regime, which was around 760 nm.

  6. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

    Science.gov (United States)

    Li, Jiehua; Hage, Fredrik S; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-04-28

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP 'patch' dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption.

  7. Modification effect of lanthanum on primary phase Mg2Si in Mg-Si alloys

    Institute of Scientific and Technical Information of China (English)

    WANG Liping; GUO Erjun; MA Baoxia

    2008-01-01

    The modifying effect of La addition on primary phase Mg2Si in Mg-5Si alloys was investigated. The results showed that a proper amount of La could effectively modify the primary phase Mg2Si. Based on the present experiment, the optimal modification effect was obtained with an addition of about 0.5 wt.% La. The size of the primary phase Mg2Si was considerably reduced to 25 μm or less and the morphology was modified from a coarse dendritic shape to a polyhedral shape. However, when the addition of La increased to 0.8 wt.% or higher, the primary Mg2Si grew into a coarse dendritic morphology again. Moreover, it was found that some LaSi2 compounds were formed during solidification and the amount of the compounds appeared to increase gradually with increasing La content.

  8. Influence of the permeability of networked primary Si on the ejection of hypereutectic Al-Si melts by centrifugation

    Science.gov (United States)

    Youn, Ji Won; Jeon, Je-Beom; Park, Jin Man; Seo, Seok Yong; Lim, Jeon Taik; Kim, Suk Jun; Kim, Ki Young

    2017-02-01

    The separation of high purity Si for solar cells from Al-Si alloy melt in the mushy zone was investigated using an advanced centrifugal technique. The efficiency of separating Si, based on the weight ratio of separated Si to Si in alloy melt, was maximized by optimizing the permeability of a porous structure of Si (Si foam.) For the optimization of the permeability, two fundamental microstructure variables, size and the solid fraction of primary Si platelets, were controlled by adjusting the Si content in the melts and the rotation start temperature, respectively. The best separation efficiency (48.3% with 3N purity) was achieved when Si content in melt was 24% and the solid fraction was 8.7%. The melt with 23% Si led to a higher separation efficiency (69.8%) for a solid fraction of 10.4%, but Al sandwiched between the Si platelets resulted in a decrease in the purity to 2N.

  9. Measurements of Al concentration in the primary Si crystals from the rheocast Al-15.5 wt% Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, G.H.; Lee, J.C.; Lee, H.I. [Korea Inst. of Science and Technology, Seoul (Korea, Republic of); Lee, J.I. [Chungju National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering

    1997-10-01

    The purpose of the present study is to investigate the distribution of Al in the primary crystal of Si in rheocast hypereutectic Al-Si alloy. Lattice parameters of primary Si crystals were determined using relative positions of the higher order Laue zone (HOLZ) lines recorded from the CBED patterns. The measured lattice parameters were then converted to the Al concentrations to compare with EPMA measurements for the accurate determination of solute concentration profile in the primary Si and to understand the role of solute redistribution on the microstructural change in hypereutectic Al-Si alloy during rheocasting.

  10. Separation of primary Si and impurity boron removal from Al-30%Si-10%Sn melt under a traveling magnetic ifeld

    Institute of Scientific and Technical Information of China (English)

    Jin-ling Sun; Qing-chuan Zou; Jin-chuan Jie; Ting-ju Li

    2016-01-01

    Separation of primary Si phase and removal of boron in the primary Si phase during the solidiifcation process of the Al-30%Si-10%Sn melt under a traveling magnetic field (TMF) were investigated. The results showed that the agglomeration layer of the primary Si can be formed in the periphery of the ingot while the inner microstructures mainly consist of the eutectic α-Al+Si and β-Sn phases. The intense melt lfow carries the bulk liquid with higher Si content to promote the growth of the primary Si phase which is ifrst precipitated close to the inner wal of crucible with a relatively lower temperature, resulting in the remarkable segregation of the primary Si phase. The content of impurity B in the primary Si phase can be removed effectively with an increase in magnetic lfux intensity. The results of electron probe microanalysis (EPMA) clearly indicated that the average intensity of the B Ka line in theα-Al phase region of Al-Si-Sn aloy is higher in the case of solidiifcation under TMF than that of normal solidiifcation condition, suggesting that the electromagnetic stirring can promote the B removal from the primary Si phase.

  11. Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  12. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    Science.gov (United States)

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  13. Primary and secondary siRNAs in geminivirus-induced gene silencing.

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    Michael Aregger

    2012-09-01

    Full Text Available In plants, RNA silencing-based antiviral defense is mediated by Dicer-like (DCL proteins producing short interfering (siRNAs. In Arabidopsis infected with the bipartite circular DNA geminivirus Cabbage leaf curl virus (CaLCuV, four distinct DCLs produce 21, 22 and 24 nt viral siRNAs. Using deep sequencing and blot hybridization, we found that viral siRNAs of each size-class densely cover the entire viral genome sequences in both polarities, but highly abundant siRNAs correspond primarily to the leftward and rightward transcription units. Double-stranded RNA precursors of viral siRNAs can potentially be generated by host RDR-dependent RNA polymerase (RDR. However, genetic evidence revealed that CaLCuV siRNA biogenesis does not require RDR1, RDR2, or RDR6. By contrast, CaLCuV derivatives engineered to target 30 nt sequences of a GFP transgene by primary viral siRNAs trigger RDR6-dependent production of secondary siRNAs. Viral siRNAs targeting upstream of the GFP stop codon induce secondary siRNAs almost exclusively from sequences downstream of the target site. Conversely, viral siRNAs targeting the GFP 3'-untranslated region (UTR induce secondary siRNAs mostly upstream of the target site. RDR6-dependent siRNA production is not necessary for robust GFP silencing, except when viral siRNAs targeted GFP 5'-UTR. Furthermore, viral siRNAs targeting the transgene enhancer region cause GFP silencing without secondary siRNA production. We conclude that the majority of viral siRNAs accumulating during geminiviral infection are RDR1/2/6-independent primary siRNAs. Double-stranded RNA precursors of these siRNAs are likely generated by bidirectional readthrough transcription of circular viral DNA by RNA polymerase II. Unlike transgenic mRNA, geminiviral mRNAs appear to be poor templates for RDR-dependent production of secondary siRNAs.

  14. Primary System Conditioned Corrosion Experiment of SiC{sub f} /SiC Composite Metal Cladding

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    Lee, Donghee; Park, Kwangheon [Kyunghee University, Yongin (Korea, Republic of); Kim, Weonju; Park, Jiyeon; Kim, Daejong; Lee, Hyeo Geun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    The weight of each one of eight specimens was measured before process and after six-time execution f the process, and, with the measured values, the amount of filled PCS was calculated. 500 hours later, the specimens were dried, and then their weight was measured and an amount of Si in the dissolved PCS was calculated. In addition, solutions were extracted from no. 1, no.2, no.3, and no.4 specimens experimented in the water condition; and from no.5, no.6, no.7, and no.8 specimens in the primary water condition. Si of the solutions was measured with the use of ICP (Direct Reading Echelle ICP, LEEMAN, with focal distance of 750mm, diffraction grating of 79grooves/mm, and resolution of 0.2nm/mm). As a result, Si dissolved in the remaining solution in each autoclave was measured to be 0.0934ppm, 0.926ppm, 0.936ppm, and 119ppm, respectively. Based on the result, it is possible to explain somewhat weight reduction in the solubility (119g/L) measured in each autoclave containing primary system water. The solubility of 119g/L seems to be a difficult value to accept. It was presumed that when water was added to make a proper Si concentration at the time of ICP measurement, an error occurred. Therefore, given the reduction in the weight of the specimens after high-temperature water experiments and Si content of the solutions, it was found that SiC in substrate melt well in high temperature water.

  15. Separation Mechanism of Primary Silicon from Hypereutectic Al-Si Melts Under Alternating Electromagnetic Fields

    Science.gov (United States)

    Xue, Haiyang; Lv, Guoqiang; Ma, Wenhui; Chen, Daotong; Yu, Jie

    2015-07-01

    Solar grade silicon (SOG-Si) and hypereutectic Al-Si alloys with low silicon (silicon composition below 25 pct) can be successfully obtained by separation of hypereutectic Al-Si alloy with high silicon (silicon composition above 30 pct) under an alternating electromagnetic field after post-processing. To explore the separation mechanism in detail, experiments were conducted in this study using a high-frequency induction furnace with different pulling conditions of the crucible which is loaded with Al-45 wt pct Si melt. Results demonstrate that the separation of hypereutectic Al-Si alloy is feasible through either a pull-up or drop-down process. The height of each separation interface between the compact and sparse parts of the primary silicon decrease as the pull-up distance rose. When the pulling rate is very low, resultant morphologies of compact primary silicon are rounded and polygonal, allowing for more effective separation of the primary silicon. A novel physical model is presented here based on the experimental results and simulation. The model can be used to effectively describe the separation mechanism of primary silicon from hypereutectic Al-Si melts under alternating electromagnetic fields.

  16. Separation of primary solid phases from Al-Si alloy melts

    Institute of Scientific and Technical Information of China (English)

    Ki Young Kim

    2014-01-01

    The iron-rich solids formed during solidification of Al-Si aloys which are known to be detrimental to the mechanical, physical and chemical properties of the aloys should be removed. On the other hand, Al-Si hypereutectic alloys are used to extract the pure primary silicon which is suitable for photovoltaic cells in the solvent refining process. One of the important issues in iron removal and in solvent reifning is the effective separation of the crystalized solids from the Al-Si aloy melts. This paper describes the separation methods of the primary solids from Al-Si aloy melts such as sedimentation, draining, ifltration, electromagnetic separation and centrifugal separation, focused on the iron removal and on the separation of silicon in the solvent refining process.

  17. Separation of primary solid phases from Al-Si alloy melts

    Directory of Open Access Journals (Sweden)

    Ki Young Kim

    2014-07-01

    Full Text Available The iron-rich solids formed during solidification of Al-Si alloys which are known to be detrimental to the mechanical, physical and chemical properties of the alloys should be removed. On the other hand, Al-Si hypereutectic alloys are used to extract the pure primary silicon which is suitable for photovoltaic cells in the solvent refining process. One of the important issues in iron removal and in solvent refining is the effective separation of the crystallized solids from the Al-Si alloy melts. This paper describes the separation methods of the primary solids from Al-Si alloy melts such as sedimentation, draining, filtration, electromagnetic separation and centrifugal separation, focused on the iron removal and on the separation of silicon in the solvent refining process.

  18. Electromagnetic Filtration of Primary Fe-Rich Phases from Al-Si Alloy Melt

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Electromagnetic filtration of primary Fe-rich phases(complex compound of AIFeSiMn)from Al-Si alloy melt containing 1.2 wt pct Fe have been studied by theoretical analysis and on a selfdesigned electromagnetic filtration equipment. The principle of the electromagnetic filtration is that the EMF(electromagnetic force)scarcely acts on the primary Fe-rich phases having low electric conductivity, which are then moved in the direction opposite to that of the EMF.Experimental results show that the primary Fe-rich phases are separated from Al-Si alloy melt and are collected in the filter while the melt is in horizontal flow.The removal efficiency of the primary iron-phases(η)calculated is less as the greatest flow velocity of the melt(uM)and the height of the filter (2h) are larger,while it becomes larger as EMF, operating distance of electromagnetic force (x) and particle size (dp) become larger. lt has been confirmed that the primary iron-phases larger than 20 μm can be removed efficiently by theoretical analysis and experiments. This new technique is high efficient and available for continuously flowing melts as compared with natural settling and filtration methods, which offer a possibility for recycling high quality aluminum alloys.

  19. Al{sub 2}O{sub 3} nanoparticles induced simultaneous refinement and modification of primary and eutectic Si particles in hypereutectic Al-20Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hongseok; Konishi, Hiromi [Department of Mechanical Engineering, University of Wisconsin-Madison, Madison, WI 53706 (United States); Li Xiaochun, E-mail: xcli@engr.wisc.edu [Department of Mechanical Engineering, University of Wisconsin-Madison, Madison, WI 53706 (United States)

    2012-04-15

    Highlights: Black-Right-Pointing-Pointer Size of primary Si particles decreased by 80% after addition of Al{sub 2}O{sub 3} nanoparticles. Black-Right-Pointing-Pointer Eutectic Si particles were also simultaneously modified by Al{sub 2}O{sub 3} nanoparticles. Black-Right-Pointing-Pointer Morphology of eutectic Si changed from large thin plate into coralline-like shape. Black-Right-Pointing-Pointer The ductility of hypereutectic Al-20Si alloy was enhanced by 365%. - Abstract: It is well known that the mechanical properties of hypereutectic Al-Si alloys are affected by the size, volume fraction, and distribution of primary and eutectic Si particles. However, it is very difficult to simultaneously refine and modify Si particles in hypereutectic Al-Si alloys by conventional means. This study investigates an effect of nanoparticles on Si particles during solidification in hypereutectic Al-Si alloys. Various contents of {gamma}-Al{sub 2}O{sub 3} nanoparticles were added in hypereutectic Al-20Si alloy melt and further dispersed through an ultrasonic cavitation based technique. The cast hypereutectic Al-20Si alloy with the nanoparticle addition showed a significant enhancement in both strengths and ductility. The ductility of the cast hypereutectic Al-20Si alloy was increased from 0.37% to 1.72% with an addition of 0.5 wt% {gamma}-Al{sub 2}O{sub 3} nanoparticles. Yield strength and ultimate tensile strength of the nanocomposite also showed an improvement of about 6% and 26%, respectively. Study suggests that {gamma}-Al{sub 2}O{sub 3} nanoparticles effectively induced simultaneous refinement of primary Si and modification of eutectic Si, resulting in superior ductility enhancement that is much higher than that conventional methods can offer. Microstructural analysis with optical and scanning electron microscope (SEM) revealed that the primary Si particles were refined from large star shapes with small features to polygon or blocky shapes with smooth edges and corners

  20. Primary Structure and Mechanical Properties of AlSi2 Alloy Continuous Ingots

    Directory of Open Access Journals (Sweden)

    Wróbel T.

    2017-06-01

    Full Text Available The paper presents the research results of horizontal continuous casting of ingots of aluminium alloy containing 2% wt. silicon (AlSi2. Together with the casting velocity (velocity of ingot movement we considered the influence of electromagnetic stirring in the area of the continuous casting mould on refinement of the ingot’s primary structure and their selected mechanical properties, i.e. tensile strength, yield strength, hardness and elongation. The effect of primary structure refinement and mechanical properties obtained by electromagnetic stirring was compared with refinement obtained by using traditional inoculation, which consists in introducing additives, i.e. Ti, B and Sr, to the metal bath. On the basis of the obtained results we confirmed that inoculation done by electromagnetic stirring in the range of the continuous casting mould guarantees improved mechanical properties and also decreases the negative influence of casting velocity, thus increasing the structure of AlSi2 continuous ingots.

  1. Characterization of bicrystalline epitaxial LaNiO{sub 3} films fabricated on MgO (1 0 0) substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Liang [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Zhu Jun [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China)]. E-mail: junzhu@uestc.edu.cn; Zhang Ying [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Jiang Shuwen [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Li Yanrong [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Huawei Xian [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Li Jinlong [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2006-03-15

    A series of metallic LaNiO{sub 3} (LNO) thin films were deposited on MgO (1 0 0) substrates by pulsed laser deposition (PLD) under the oxygen pressure of 20 Pa at different substrate temperatures from 450 to 750 deg. C. X-ray diffraction (XRD) was used to characterize the crystal structure of LNO films. {theta}-2{theta} scans of XRD indicate that LNO film deposited at a substrate temperature of 700 deg. C has a high orientation of (l l 0). At other substrate temperatures, the LNO films have mixed phases of (l l 0) and (l 0 0). Furthermore, pole figure measurements show that LNO thin films, with the bicrystalline structure, were epitaxially deposited on MgO (1 0 0) substrates in the mode of LNO (1 1 0)//MgO (1 0 0) at 700 deg. C. Reflection high-energy electric diffraction (RHEED) and atomic force microscopy (AFM) were also performed to investigate the microstructure of LNO films with the high (l l 0) orientation. RHEED patterns clearly confirm this epitaxial relationship. An atomically smooth surface of LNO films at 700 deg. C was obtained. In addition, bicrystalline epitaxial LNO films, fabricated at 700 deg. C, present a excellent conductivity with a lower electrical resistivity of 300 {mu} {omega} cm. Thus, the obtained results indicate that bicystalline epitaxial LNO films could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.

  2. Evaluating Primary Dendrite Trunk Diameters in Directionally Solidified Al-Si Alloys

    Science.gov (United States)

    Grugel, R. N.; Tewari, S. N.; Poirier, D. R.

    2014-01-01

    The primary dendrite trunk diameters of Al-Si alloys that were directionally solidified over a range of processing conditions have been measured. These data are analyzed with a model based primarily on an assessment of secondary dendrite arm dissolution in the mushy zone. Good fit with the experimental data is seen and it is suggested that the primary dendrite trunk diameter is a useful metric that correlates well with the actual solidification processing parameters. These results are placed in context with the limited results from the aluminium - 7 wt. % silicon samples directionally solidified aboard the International Space Station as part of the MICAST project.

  3. Hydrophobically Modified siRNAs Silence Huntingtin mRNA in Primary Neurons and Mouse Brain

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    Julia F Alterman

    2015-01-01

    Full Text Available Applications of RNA interference for neuroscience research have been limited by a lack of simple and efficient methods to deliver oligonucleotides to primary neurons in culture and to the brain. Here, we show that primary neurons rapidly internalize hydrophobically modified siRNAs (hsiRNAs added directly to the culture medium without lipid formulation. We identify functional hsiRNAs targeting the mRNA of huntingtin, the mutation of which is responsible for Huntington's disease, and show that direct uptake in neurons induces potent and specific silencing in vitro. Moreover, a single injection of unformulated hsiRNA into mouse brain silences Htt mRNA with minimal neuronal toxicity. Thus, hsiRNAs embody a class of therapeutic oligonucleotides that enable simple and straightforward functional studies of genes involved in neuronal biology and neurodegenerative disorders in a native biological context.

  4. The effect of inclination angle on the plastic deformation behavior of bicrystalline silver nanowires with Σ3 asymmetric tilt grain boundaries

    Science.gov (United States)

    Yuan, Lin; Jing, Peng; Shan, Debin; Guo, Bin

    2017-01-01

    Atomistic simulations were used to investigate the plastic deformation behavior of bicrystalline silver nanowires with Σ3 asymmetric tilt grain boundaries at 0.1 K. The calculated grain boundary energies of Σ3 asymmetric tilt grain boundaries corresponded well with the energies measured in experiments and predicted by the theoretical description. The Σ3 asymmetric tilt grain boundaries with low inclination angles were composed of a replication of twin boundary segments separated by small ledges. The results demonstrated that the combination effect of Schmid factor and non-Schmid factors could explain dislocations emission into grain 1 only in models with low inclination angles (Ф nanocrystalline materials and provide insights into the synthesis of nanocrystalline materials with superior strength and ductility.

  5. Stearylated octaarginine and artificial virus-like particles for transfection of siRNA into primary rat neurons

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    Tönges, Lars; Lingor, Paul; Egle, Roman; Dietz, Gunnar P.H.; Fahr, Alfred; Bähr, Mathias

    2006-01-01

    RNA interference (RNAi) provides a powerful experimental tool for sequence-specific gene silencing, allowing efficient analysis of gene function in a multitude of cell types. However, application of RNAi in primary mammalian neurons has been limited by low-transfection efficiency and considerable toxicity of conventional transfection methods. In this study, we evaluated a peptide-mediated and a polymer/lipid-based cellular delivery method for siRNA into rat primary neurons and compared the results with a commonly used liposomal transfection reagent. Stearylated octaarginine (Stearyl-R8) was used as polypeptide and artificial virus-like particles (AVPs) were used as a combined liposomal-polymeric vector, since both reagents have been previously shown to successfully transfect DNA into cell lines. Stearyl-R8 and AVPs both promoted siRNA transfection into primary hippocampal neurons via the endosomal pathway. SiRNA-mediated gene silencing could be effectively induced in primary neuron cultures. In comparison with the commonly used cationic liposome transfection agent, both novel reagents were less detrimental to cell metabolic activity. We conclude that these novel transfection methods yield performances comparable to cationic liposome-mediated transfection for siRNA, while being less cytotoxic in primary neurons. Stearyl-R8 and AVPs may therefore represent novel and more cost-efficient alternatives to conventional siRNA-transfection reagents. PMID:16699166

  6. PEG-PEI/siROCK2 Protects Against Aβ42-Induced Neurotoxicity in Primary Neuron Cells for Alzheimer Disease.

    Science.gov (United States)

    Liu, Yunyun; Yang, Xingyi; Lei, Qingfeng; Li, Zhong; Hu, Jingyang; Wen, Xiaojun; Wang, Huijun; Liu, Zhonglin

    2015-08-01

    Gene therapy that targets the ROCK2 gene has yielded promising results in the treatment of AD. Our previous study indicated that PEG-PEI/siROCK2 could effectively suppress ROCK2 mRNA expression and showed a promising prospect for the treatment of Alzheimer's disease. However, the ability of PEG-PEI/siROCK2 to reduce Aβ-induced cytotoxicity is unknown. To investigate the effect of PEG-PEI/siROCK2 against Aβ42-induced neurotoxicity, primary cultured cortical neurons were pretreated with PEG-PEI/siROCK2 for 24 h and then treated with 5 μM Aβ42 for 24 h. We found that PEG-PEI/siROCK2 increased the cell viability and reduced the number of apoptotic cells induced by Aβ42, as measured using an MTT assay and Annexin V/PI staining. A further study revealed that PEG-PEI/siROCK2 can activate p-Akt, and treatment with the PI3K inhibitor LY294002 attenuated the neuroprotective effects. These results suggest that PEG-PEI/siROCK2 prevents Aβ42-induced neurotoxicity and that the activation of PI3K/Akt pathway is involved in neuroprotection. Taken together, these findings shed light on the role of PEG-PEI/siROCK2 as a potential therapeutic agent for AD.

  7. Effect of bariun on the refinement of primary aluminum and eutectics in a hypoeutectic Al-Si alloy

    Institute of Scientific and Technical Information of China (English)

    LI Wei; FAN Hongyuan; ZHANG Xianju; SHEN Baoluo

    2003-01-01

    The effect of barium on the refinement of primary aluminum and on the modification of eutectics in a hypoeutectic aluminm-silicon alloy was investigated. The results indicate that barium not only modifies the eutectic silicon but also refines the primary aluminum and there is a relationship between the retained barium and the second spacing of primary aluminum. Experiments of barium-treated commercial Al-Si hypoeutectic alloy show that barium is a better modifier than sodium when there is a longer holding time.

  8. Primary and secondary siRNA synthesis triggered by RNAs from food bacteria in the ciliate Paramecium tetraurelia.

    Science.gov (United States)

    Carradec, Quentin; Götz, Ulrike; Arnaiz, Olivier; Pouch, Juliette; Simon, Martin; Meyer, Eric; Marker, Simone

    2015-02-18

    In various organisms, an efficient RNAi response can be triggered by feeding cells with bacteria producing double-stranded RNA (dsRNA) against an endogenous gene. However, the detailed mechanisms and natural functions of this pathway are not well understood in most cases. Here, we studied siRNA biogenesis from exogenous RNA and its genetic overlap with endogenous RNAi in the ciliate Paramecium tetraurelia by high-throughput sequencing. Using wild-type and mutant strains deficient for dsRNA feeding we found that high levels of primary siRNAs of both strands are processed from the ingested dsRNA trigger by the Dicer Dcr1, the RNA-dependent RNA polymerases Rdr1 and Rdr2 and other factors. We further show that this induces the synthesis of secondary siRNAs spreading along the entire endogenous mRNA, demonstrating the occurrence of both 3'-to-5' and 5'-to-3' transitivity for the first time in the SAR clade of eukaryotes (Stramenopiles, Alveolates, Rhizaria). Secondary siRNAs depend on Rdr2 and show a strong antisense bias; they are produced at much lower levels than primary siRNAs and hardly contribute to RNAi efficiency. We further provide evidence that the Paramecium RNAi machinery also processes single-stranded RNAs from its bacterial food, broadening the possible natural functions of exogenously induced RNAi in this organism.

  9. Effect of microwave-enhanced superconductivity in YBa{sub 2}Cu{sub 3}O{sub 7} bi-crystalline grain boundary weak-links

    Energy Technology Data Exchange (ETDEWEB)

    Fu, C.M.; Chen, C.M.; Lin, H.C. [National Chiao-Tung Univ., Taiwan (China)] [and others

    1994-12-31

    We have studied systematically the effect of microwave irradiation on the temperature dependent resistivity R(T) and the current-voltage (I-V) characteristics of YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) bicrystalline grain boundary weak-links (GBWLs), with grain boundary of three different tilt angles. The superconducting transition temperature, T{sub c}, has significant enhancement upon microwave irradiation. The microwave enhanced T{sub c} is increased as a function of incidence microwave power, but limited to an optimum power level. The GBWLs of 45{degrees} tilt boundary has shown to be most sensitive to the microwave irradiation power, and the GBWLs of 36.8{degrees} tilt boundary has displayed a moderate response. In contrast, no enhancement of T{sub c} was observed in the GBWLs of 24{degrees} tilt boundary, as well as in the uniform films. Under the microwave irradiation, the R(T) dependence is hysteretic as the transition taken from superconducting state to normal state and vice versa. Mechanisms associated with the redistribution of nonequilibrium quasiparticles under microwave irradiation are discussed.

  10. Design and fabrication of CGH for 600mm diameter SiC primary mirror surface figure testing

    Science.gov (United States)

    Pang, Zhihai; Ma, Zhen; Fan, Xuewu; Zou, Gangyi

    2016-09-01

    Computer-generated hologram (CGH) is an effective way to compensate wavefront aberration in null test of aspheric surfaces and freeform surfaces. Our strategies of CGH design for 600mm diameter SiC primary mirror surface figure testing are presented, and an experiment demonstrating the compensation test results of CGH is reported. We design a CGH including two sections on the same substrate in order to align the CGH to the incident wavefront: main section for compensating wavefront in null test, alignment section for adjusting the relative position between CGH and interferometer. In order to isolate different orders of diffraction, we used power carrier to make different orders of diffraction come to focus at different position along the axis to avoid ghost reflections. We measured the 600mm diameter SiC primary mirror using this CGH, and the surface test result is 0.033λ rms.

  11. Influence of Temperature on Typical Texture Distribution in Primary Recrystallization Matrix of 3% Si CGO Silicon Steel

    Directory of Open Access Journals (Sweden)

    Zhi-chao Li

    2016-01-01

    Full Text Available OM (optical microscopy and EBSD (electron backscatter diffraction techniques were used to study microstructure and texture distribution during primary recrystallization under different intermediate annealing temperatures in CGO silicon steels. The effect of intermediate annealing temperature on texture distribution in 3% Si electrical steel was analyzed. The results indicate that the microstructure in primary recrystallization matrix of CGO silicon steel is comprised of equiaxed ferrite grains. Mean grain size of primary recrystallization increases with the rising of intermediate annealing temperature. γ-fiber texture is the dominant component in primary recrystallization matrix. With higher intermediate annealing temperature, 111121 texture and 111110 texture increase and 111121 texture is stronger than 111110 texture. Goss texture was observed to be decreased firstly and then increased. The content of high angle grain boundaries in primary recrystallization matrix are affected by intermediate annealing temperature. When intermediate annealing temperature is increased, high angle grain boundaries are increased firstly and then decreased. Misorientation distribution in primary recrystallized matrix is affected by primary recrystallization annealing temperature either. The content of high angle grain boundaries are increased owing to higher primary recrystallization annealing temperature, which can be a benefit to the abnormal growth of Goss grains in secondary recrystallization.

  12. Three-dimensional visualization and characterization of morphology and internal microstructural features of primary silicon crystals in a cast Al-Si base alloy

    Science.gov (United States)

    Singh, H.; Gokhale, A. M.; Mao, Y.; Tewari, A.; Sachdev, A. K.

    2009-09-01

    Primary Si crystals are usually present in the cast microstructures of near-eutectic, eutectic, and hyper-eutectic Al-Si base alloys. Three-dimensional digital images of individual primary Si crystals present in a permanent mold cast unmodified Al-12 wt% Si-1 wt% Ni base alloy are reconstructed using a combination of montage serial sectioning and three-dimensional digital image processing techniques. Octahedral, prismatic, and plate-like three-dimensional morphologies of the primary Si crystals are present in the microstructure. Some of the primary Si crystals contain interior regions/islands of Al-alloy that are completely enclosed in the corresponding Si crystals indicating certain variations in the crystal growth velocities during the evolution of these crystals. The boundaries of these interior regions/islands are non-faceted smooth and curved indicating re-melting of the Al-rich islands and re-dissolution of some Si near these internal boundaries in the Al-alloy as a result of the heat generated by liquid-to-solid transformation of Si away from the islands.

  13. The efficacy of nuclease-resistant Chol-siRNA in primary breast tumors following complexation with PLL-PEG(5K).

    Science.gov (United States)

    Ambardekar, Vishakha V; Wakaskar, Rajesh R; Sharma, Bhawna; Bowman, Joy; Vayaboury, Willy; Singh, Rakesh K; Vetro, Joseph A

    2013-07-01

    Modifying the sense strand of nuclease-resistant siRNA with 3'-cholesterol (Chol-*siRNA) increases mRNA suppression after i.v. administration but with relatively low efficacy. We previously found evidence in vitro that suggests complexation of Chol-siRNA with PLL-PEG(5K), a block copolymer of poly-l-lysine and 5 kDa polyethylene glycol, may increase the efficacy of Chol-siRNA in vivo in a PLL block length-dependent manner. In this study, the extent that polyplexes of PLL10-PEG(5K), PLL30-PEG(5K), and PLL50-PEG(5K) protect complexed Chol-siRNA in high concentrations of murine serum and affect the activity of Chol-*siRNA in murine 4T1 breast tumor epithelial cells in vitro and in primary orthotopic tumors of 4T1 was compared. PLL-PEG(5K) required 3'-Chol to protect full-length siRNA from nuclease degradation in 90% (v/v) murine serum and protection was increased by increasing PLL block length and nuclease resistance of Chol-siRNA. Polyplexes of Chol-*siLuc suppressed stably expressed luciferase in 4T1-Luc cells to different levels in vitro where PLL30 > PLL50 > PLL10. In contrast, only polyplexes of Chol-*siLuc and PLL30-PEG(5K) or PLL50-PEG(5K) suppressed high levels of luciferase in primary orthotopic tumors of 4T1-Luc after i.v. administration, whereas polyplexes of Chol-*siLuc and PLL10-PEG(5K), inactive Chol-*siCtrl polyplexes of PLL-PEG(5K), or Chol-*siLuc alone had no detectable activity. As a whole, these results indicate that polyplexes of PLL-PEG(5K) increase the efficacy of nuclease-resistant Chol-siRNA in primary breast tumors after i.v. administration in a PLL block length-dependent manner. Thus, complexation of Chol-siRNA with PLL-PEG(5K) may be a promising approach to increase the efficacy of Chol-siRNA in a wide range of primary tumors, metastases, and other tissues but likely requires a PLL block length that balances polymer-related adverse effects, Chol-siRNA bioavailability, and subsequent activity in the target cell. Copyright © 2013 Elsevier Ltd

  14. Abundant primary piRNAs, endo-siRNAs, and microRNAs in a Drosophila ovary cell line.

    Science.gov (United States)

    Lau, Nelson C; Robine, Nicolas; Martin, Raquel; Chung, Wei-Jen; Niki, Yuzo; Berezikov, Eugene; Lai, Eric C

    2009-10-01

    Piwi proteins, a subclass of Argonaute-family proteins, carry approximately 24-30-nt Piwi-interacting RNAs (piRNAs) that mediate gonadal defense against transposable elements (TEs). We analyzed the Drosophila ovary somatic sheet (OSS) cell line and found that it expresses miRNAs, endogenous small interfering RNAs (endo-siRNAs), and piRNAs in abundance. In contrast to intact gonads, which contain mixtures of germline and somatic cell types that express different Piwi-class proteins, OSS cells are a homogenous somatic cell population that expresses only PIWI and primary piRNAs. Detailed examination of its TE-derived piRNAs and endo-siRNAs revealed aspects of TE defense that do not rely upon ping-pong amplification. In particular, we provide evidence that a subset of piRNA master clusters, including flamenco, are specifically expressed in OSS and ovarian follicle cells. These data indicate that the restriction of certain TEs in somatic gonadal cells is largely mediated by a primary piRNA pathway.

  15. A fundamental study of the oxidation behavior of SI primary reference fuels with propionaldehyde and DTBP as an additive

    Science.gov (United States)

    Johnson, Rodney

    In an effort to combine the benefits of SI and CI engines, Homogeneous Charge Compression Ignition (HCCI) engines are being developed. HCCI combustion is achieved by controlling the temperature, pressure, and composition of the fuel and air mixture so that autoignition occurs in proper phasing with the piston motion. This control system is fundamentally more challenging than using a spark plug or fuel injector to determine ignition timing as in SI and CI engines, respectively. As a result, this is a technical barrier that must be overcome to make HCCI engines applicable to a wide range of vehicles and viable for high volume production. One way to tailor the autoignition timing is to use small amounts of ignition enhancing additives. In this study, the effect of the addition of DTBP and propionaldehyde on the autoignition behavior of SI primary reference fuels was investigated. The present work was conducted in a new research facility built around a single cylinder Cooperative Fuels Research (CFR) octane rating engine but modified to run in HCCI mode. It focused on the effect of select oxygenated hydrocarbons on hydrocarbon fuel oxidation, specifically, the primary reference fuels n-heptane and iso-octane. This work was conducted under HCCI operating conditions. Previously, the operating parameters for this engine were validated for stable combustion under a wide range of operating parameters such as engine speeds, equivalence ratios, compression ratios and inlet manifold temperature. The stable operating range under these conditions was recorded and used for the present study. The major focus of this study was to examine the effect of the addition of DTBP or propionaldehyde on the oxidation behavior of SI primary reference fuels. Under every test condition the addition of the additives DTBP and propionaldehyde caused a change in fuel oxidation. DTBP always promoted fuel oxidation while propionaldehyde promoted oxidation for lower octane number fuels and delayed

  16. Targeted transfection increases siRNA uptake and gene silencing of primary endothelial cells in vitro - A quantitative study

    NARCIS (Netherlands)

    Asgeirsdottir, Sigridur A.; Talman, Eduard G.; de Graaf, Inge A.; Kamps, Jan A. A. M.; Satchell, Simon C.; Mathieson, Peter W.; Ruiters, Marcel H. J.; Molema, Grietje

    2010-01-01

    Applications of small-interfering RNA (siRNA) call for specific and efficient delivery of siRNA into particular cell types. We developed a novel, non-viral targeting system to deliver siRNA specifically into inflammation-activated endothelial cells. This was achieved by conjugating the cationic amph

  17. 超声波对原位Mg2Si/Al复合材料中初生Mg2Si形态的影响%Effect of ultrasonic on morphology of primary Mg2Si in in-situ Mg2Si/Al composite

    Institute of Scientific and Technical Information of China (English)

    张家陶; 赵宇光; 徐晓峰; 刘晓波

    2013-01-01

    采用光学显微镜和场发射扫描电镜,研究超声波对原位 Mg2Si/Al 复合材料中初生 Mg2Si 形态的影响。研究结果表明:超声波处理使初生Mg2Si的晶粒尺寸从150μm降低到20μm,初生Mg2Si形态发生改变。在二维形貌中,未实施超声波振动处理的初生Mg2Si晶粒生长为含有空腔的粗大颗粒,共晶组织生长于其中,相应的三维形态为含有漏斗状空腔的八面体和十四面体。超声波处理后的初生Mg2Si晶粒变成细小、实心三维形态的颗粒,颗粒棱角已发生钝化效应。%Effects of ultrasonic on morphologies of primary Mg2Si crystals in in-situ Mg2Si/Al composite were investigated by metallographic microscopy and field emission scanning electron microscopy. The results show that the mean grain size of primary Mg2Si crystals is refined from 150 to 20 μm by high intensity ultrasonic, and the morphologies of primary Mg2Si crystals are changed as well. Optical microscopy reveals that primary Mg2Si crystals without ultrasonic vibration exhibit coarse particles with cavities, in which eutectic structures grow. However, primary Mg2Si crystals with ultrasonic vibration appear fine grains without any cavity. Three-dimensional morphologies of primary Mg2Si without ultrasonic vibration display octahedron and tetrakaidecahedron with hopper-like hole in the crystals. After ultrasonic vibration, primary Mg2Si particles become solid crystals with rounded corners and edges.

  18. Resonant behavior of the barrier of YBa{sub 2}Cu{sub 3}O{sub 7} grain boundary Josephson junctions fabricated on bicrystalline substrates with different geometries

    Energy Technology Data Exchange (ETDEWEB)

    Navacerrada, M.A., E-mail: mdelosangeles.navacerrada@upm.es [Grupo de Acustica Arquitectonica, Escuela Tecnica Superior de Arquitectura, Universidad Politecnica de Madrid, Avenida Juan de Herrera 4, 28040 Madrid (Spain); Lucia, M.L.; Sanchez-Quesada, F. [Departamento Fisica Aplicada III (Electricidad y Electronica), Facultad de Cc. Fisicas, Universidad Complutense, Avenida Complutense s/n, 28040 Madrid (Spain)

    2012-12-14

    We have analyzed a resonant behavior in the dielectric constant associated to the barrier of YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) grain boundary Josephson junctions (GBJJs) fabricated on a wide variety of bicrystalline substrates: 12 Degree-Sign [0 0 1] tilt asymmetric, 24 Degree-Sign [0 0 1] tilt asymmetric, 24 Degree-Sign [0 0 1] tilt symmetric, 24 Degree-Sign [1 0 0] tilt asymmetric, 45 Degree-Sign [1 0 0] tilt asymmetric and 24 Degree-Sign [0 0 1] tilt symmetric +45 Degree-Sign [1 0 0] tilt asymmetric bicrystals. The resonance analysis allows us to estimate a more appropriate value of the relative dielectric constant, and so a more adequate value for the length L of the normal N region assuming a SNINS model for the barrier. In this work, the L dependence on the critical current density Jc has been investigated. This analysis makes possible a single representation for all the substrate geometries independently on around which axes the rotation is produced to generate the grain boundary. On the other hand, no clear evidences exist on the origin of the resonance. The resonance frequency is in the order of 10{sup 11} Hz, pointing to a phonon dynamic influence on the resonance mechanism. Besides, its position is affected by the oxygen content of the barrier: a shift at low frequencies is observed when the misorientation angle increases.

  19. Using Nucleofection of siRNA Constructs for Knockdown of Primary Cilia in P19.CL6 Cancer Stem Cell Differentiation into Cardiomyocytes

    DEFF Research Database (Denmark)

    Clement, Christian Alexandro; Larsen, Lars Allan; Christensen, Søren Tvorup

    2009-01-01

    Primary cilia assemble as solitary organelles in most mammalian cells during growth arrest and are thought to coordinate a series of signal transduction pathways required for cell cycle control, cell migration, and cell differentiation during development and in tissue homeostasis. Recently, primary...... cilia were suggested to control pluripotency, proliferation, and/or differentiation of stem cells, which may comprise an important source in regenerative biology. We here provide a method using a P19.CL6 embryonic carcinoma (EC) stem cell line to study the function of the primary cilium in early...... cardiogenesis. By knocking down the formation of the primary cilium by nucleofection of plasmid DNA with siRNA sequences against genes essential in ciliogenesis (IFT88 and IFT20) we block hedgehog (Hh) signaling in P19.CL6 cells as well as the differentiation of the cells into beating cardiomyocytes (Clement et...

  20. Effects of individual and combined additions of phosphorus, boron and cerium on primary and eutectic silicon in an Al-30Si alloy

    Institute of Scientific and Technical Information of China (English)

    DAI Hongshang; LIU Xiangfa

    2009-01-01

    The modification of silicon in an Al-30Si alloy was studied using optical microscopy, electron probe micro-analysis, transmission electron microscopy and differential scanning calorimetry. It is found that phosphorus master alloys combined with boron master alloys have good modification effect on primary silicon but no evident modification effect on eutectic silicon, while boron combined with cerium has good modification effect on eutectic silicon. The results of differential scanning calorimetry show that phosphorus, boron or cerium addition and their combined addition have different undercooling effects on eutectic silicon. Many scholars thought that AlP particles were the nuclei of eutectic silicon when phosphorus was enough in the alloy. Our results show that β-(Al,Si,Fe) can still be the nucleus of plate-like eutectic silicon while AlP is the nucleus of prhnary silicon when there is enough phosphorus in the melt. In addition, the mechanism about the modi-fication was also discussed.

  1. Morphological properties of nociceptive and non-nociceptive neurons in primary somatic cerebral cortex (SI) of cat

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    With the techniques of intracellular recording and labelling, we investigated pain sensation and modulation of the somatic cortical cortex at the neuron's level. After observing the evoked potentials from stimulating the saphenous nerves (SN) of 654 neurons in SI area of the cats, we labelled 30 of the neurons with Neurobiotin to preserve the distribution and the morphologic characteristics of the neurons in the cortex. Based on the tridimensional reconstruction in addition to the eletrophysiological functions, we found clear morphological distinctions between nociceptive and non-nociceptive neurons (P<0.01). This result provided new experimental material to illustrate the function of nociceptive neurons in somatosensory cortex (SI) and presented further evidence to support the "specificity theory" of pain sensation in terms of morphology.

  2. Primary Dendrite Arm Spacing and Trunk Diameter in Al-7-Weight-Percentage Si Alloy Directionally Solidified Aboard the International Space Station

    Science.gov (United States)

    Ghods, M.; Tewari, S. N.; Lauer, M.; Poirier, D. R.; Grugel, R. N.

    2016-01-01

    Under a NASA-ESA collaborative research project, three Al-7-weight-percentage Si samples (MICAST-6, MICAST-7 and MICAST 2-12) were directionally solidified aboard the International Space Station to determine the effect of mitigating convection on the primary dendrite array. The samples were approximately 25 centimeters in length with a diameter of 7.8 millimeter-diameter cylinders that were machined from [100] oriented terrestrially grown dendritic Al-7Si samples and inserted into alumina ampoules within the Sample Cartridge Assembly (SCA) inserts of the Low Gradient Furnace (LGF). The feed rods were partially remelted in space and directionally solidified to effect the [100] dendrite-orientation. MICAST-6 was grown at 5 microns per second for 3.75 centimeters and then at 50 microns per second for its remaining 11.2 centimeters of its length. MICAST-7 was grown at 20 microns per second for 8.5 centimeters and then at 10 microns per second for 9 centimeters of its remaining length. MICAST2-12 was grown at 40 microns per second for 11 centimeters. The thermal gradient at the liquidus temperature varied from 22 to 14 degrees Kelvin per centimeter during growth of MICAST-6, from 26 to 24 degrees Kelvin per centimeter for MICAST-7 and from 33 to 31 degrees Kelvin per centimeter for MICAST2-12. Microstructures on the transverse sections along the sample length were analyzed to determine nearest-neighbor spacing of the primary dendrite arms and trunk diameters of the primary dendrite-arrays. This was done along the lengths where steady-state growth prevailed and also during the transients associated with the speed-changes. The observed nearest-neighbor spacings during steady-state growth of the MICAST samples show a very good agreement with predictions from the Hunt-Lu primary spacing model for diffusion controlled growth. The observed primary dendrite trunk diameters during steady-state growth of these samples also agree with predictions from a coarsening-based model

  3. Effect of primary materials ratio and their stirring time on SiC Nanoparticle production efficiency through sol gel process

    Directory of Open Access Journals (Sweden)

    Hassan Nosrati

    2016-08-01

    Full Text Available In this article, SiC (silicon carbide Nanopowder was synthesized by sol-gel method. TEOS and sucrose were used as pricier source. Final gel were prepared by mixing in different stirring times and different ratio in pH=4 and drying. This mixture was heated at 650°C and carbothermal reduction was carried out at 1500 °C. XRD analyses showed that produced powder in this condition are only β-Sic. Investigating SEM and TEM images and PS diagrams for different samples one can realize that in TEOS/sucrose=4 and stirring time, 5 hours, maximum efficiency and minimum grain size and minimum agglomeration occurs. Experiment result indicated that nano silicium carbide along with tetraethoxysilane, ethanol, sucrose and water can be used as carbon supply. Average grain size which has been seen by SEM was less than 100 nm.

  4. MeV-SIMS yield measurements using a Si-PIN diode as a primary ion current counter

    Energy Technology Data Exchange (ETDEWEB)

    Stoytschew, Valentin; Bogdanović Radović, Iva [Ruđer Bošković Institute, Zagreb (Croatia); Demarche, Julien [University of Surrey, Surrey (United Kingdom); Jakšić, Milko [Ruđer Bošković Institute, Zagreb (Croatia); Matjačić, Lidija [University of Surrey, Surrey (United Kingdom); Siketić, Zdravko [Ruđer Bošković Institute, Zagreb (Croatia); Webb, Roger [University of Surrey, Surrey (United Kingdom)

    2016-03-15

    Megaelectronvolt-Secondary Ion Mass Spectrometry (MeV-SIMS) is an emerging Ion Beam Analysis technique for molecular speciation and submicron imaging. Various setups have been constructed in the recent years. Still a systematic investigation on the dependence of MeV-SIMS yields on different ion beam parameters is missing. A reliable measurement method of the beam current down to the attoampere range is needed for this investigation. Therefore, a new detector has been added to the MeV-SIMS setup at the Ruđer Bošković Institute (RBI), which measures the current directly using a Si PIN-diode. In this work, we present the constructed system, its characteristics, and results of the first yield measurements. These measurements have already identified important factors that have to be considered while constructing a MeV SIMS setup.

  5. Revised Energy Spectra for Primary Elements, H - Si, above 50 GeV from the ATIC-2 Science Flight

    Science.gov (United States)

    Wefel, J. P.; Adams, J. H., Jr.; Ahn, H. S.; Bashindzhagyan, G. L.; Chang, J.; Christl, M.; Fazely, A. R.; Ganel, O.; Gunashingha, R. M.; Guzik, T. G.; hide

    2007-01-01

    The Advanced Thin Ionization Calorimeter (ATIC) long duration balloon experiment had a successful science flight accumulating 18 days of data (12/02 - 1/03) during a single circumnavigation in Antarctica. ATIC measures the energy spectra of elements from H to Fe in primary cosmic rays using a fully active Bismuth Germanate calorimeter preceded by a carbon target, with embedded scintillator hodoscopes, and a silicon matrix charge detector at the top. Preliminary results from ATIC have been reported in previous conferences. The revised results reported here are derived from a new analysis of the data with improved charge resolution, lower background and revised energy calibration. The raw energy deposit spectra are de-convolved into primary energy spectra and extrapolated to the top of the atmosphere. We compare these revised results to previous data and comment upon the astrophysical interpretation of the results.

  6. New primary pressure calibrants for high pressure and temperature scale: SiC-3C and cBN are possible candidates

    Science.gov (United States)

    Zhuravlev, Kirill; Goncharov, Alexander; Prakapenka, Vitali

    2011-03-01

    Since the invention of a diamond-anvil cell, various high-pressure scales for in situ pressure measurements have been realized. Ruby-based pressure scale (Mao et al., 1986) is the best known and high-pressure scientific community has been using it for over two decades. However, it has limited use at elevated temperatures, due to the weakening and broadening of the ruby fluorescence line. The recent developments in the field of high temperature, high pressure physics and geophysics require some alternative pressure scale, capable of measuring pressures at temperatures up to 3000 K. Cubic boron nitride (cBN) was recently proposed as the possible pressure calibrant. It has been suggested that the simultaneous use of x-ray diffraction to measure density and Brillouin spectroscopy to obtain elastic properties of the crystal can be used to construct the pressure scale independent of any other pressure standards. However, the acoustic velocities of cBN are very close to those of diamond and, therefore, are hard to resolve in experiment in diamond-anvil cell. Another possible primary pressure calibrant is cubic silicon carbide (SiC-3C). We performed single crystal x-ray diffraction and Brillouin spectroscopy up to 1 Mbar in pressure at room temperature in the diamond-anvil cell and show that cBN and SiC-3C, indeed, can be used in constructing reliable and accurate high-pressure, high-temperature scale.

  7. Primary study of the isothermal phase diagram of the Cu2O-Al2O3-SiO2 ternary system at 1150℃ in air

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The isothermal phase diagram of the Cu2O-Al2O3-SiO2 ternary system at 1150℃ was reported for the samples which were prepared from sol-gel method and quenched by water after being heated at 1150℃ for 12 h. Based on the conventional X-ray powder diffraction (XRD) and in situ high-temporature XRD quantitative analysis, in addition to scanning electron microscopy measurement, the phase identification was achieved. Combining the deduction from the component phase diagrams of the binary systems using the phase equilibrium theorem, the primary isothermal phase diagram was plotted over the composition area Cu2O-mullite-SiO2. In this area, the approximate composition areas of two two-phase regions and one three-phase region, (L2 + Cr), (L2 + M), and (L1 + L2 + Tr), were determined. Moreover, the precise composition areas of both of the three-phase regions (L2 + Cr + M) and (L2 + M + A) were determined according to the results of conventional and in situ high-temperature XRD quantitative analysis by Rietveld method.

  8. Depicting the inner and outer nose: the representation of the nose and the nasal mucosa on the human primary somatosensory cortex (SI).

    Science.gov (United States)

    Gastl, Mareike; Brünner, Yvonne F; Wiesmann, Martin; Freiherr, Jessica

    2014-09-01

    The nose is important not only for breathing, filtering air, and perceiving olfactory stimuli. Although the face and hands have been mapped, the representation of the internal and external surface of the nose on the primary somatosensory cortex (SI) is still poorly understood. To fill this gap functional magnetic resonance imaging (fMRI) was used to localize the nose and the nasal mucosa in the Brodman areas (BAs) 3b, 1, and 2 of the human postcentral gyrus (PG). Tactile stimulation during fMRI was applied via a customized pneumatically driven device to six stimulation sites: the alar wing of the nose, the lateral nasal mucosa, and the hand (serving as a reference area) on the left and right side of the body. Individual representations could be discriminated for the left and right hand, for the left nasal mucosa and left alar wing of the nose in BA 3b and BA 1 by comparing mean activation maxima and Euclidean distances. Right-sided nasal conditions and conditions in BA 2 could further be separated by different Euclidean distances. Regarding the alar wing of the nose, the results concurred with the classic sensory homunculus proposed by Penfield and colleagues. The nasal mucosa was not only determined an individual and bilateral representation, its position on the somatosensory cortex is also situated closer to the caudal end of the PG compared to that of the alar wing of the nose and the hand. As SI is commonly activated during the perception of odors, these findings underscore the importance of the knowledge of the representation of the nasal mucosa on the primary somatosensory cortex, especially for interpretation of results of functional imaging studies about the sense of smell.

  9. SiO2-Cu2O:An efficient and recyclable heterogeneous catalyst for N-benzylation of primary and secondary amines

    Institute of Scientific and Technical Information of China (English)

    Manjulla Gupta; Satya Paul; Rajive Gupta

    2014-01-01

    A mild, effective, and selective procedure is reported for the mono N-benzylation and N,N- diben-zylation of primary amines as well as mono N-benzylation of secondary amines using sili-ca-supported copper(I) oxide in water. The silica-supported Cu2O was generated in situ by the reac-tion of Fehling solution and glucose at 100 °C onto activated silica. The catalyst was filtered, washed with water, and oven-dried, and was characterized by Fourier transform infrared spectroscopy, thermogravimetric analysis, scanning electron microscopy, transmission electron microscopy, and atomic absorption spectroscopy. The prepared Cu2O-SiO2 was found to be thermally stable up to 325 °C. The copper was uniformly distributed onto the surface of the silica, and the mean particle diameter was 7 nm. The catalyst served as a selective heterogenous catalyst for the N-benzylation of primary and secondary amines. The catalyst is recyclable and was used effectively upto fifth run without a significant loss of catalytic activity. Various reaction solvents including water, acetonitrile, and toluene were screened for N-benzylation of amines, and the success of the aqueous system highlights the low environmental impact of the procedure.

  10. Highly Efficient Transfection of Small Interfering RNA into Murine Primary Chondrocytes via Optimized Electroporation%电穿孔法介导 siRNA 高效转染小鼠原代软骨细胞

    Institute of Scientific and Technical Information of China (English)

    刘安军; 麻献华; 杨瑞; 高琳; 陈李斌佶; 章卫平; 谢志芳

    2015-01-01

    目的:建立小鼠原代软骨细胞高效电转siRNA的方法。方法常规分离得到的小鼠原代软骨细胞继续用链丝菌蛋白酶消化3h,然后应用高效电转缓冲液和优化的电转参数转染pCMV-EGFP表达质粒或siRNA,用台盼蓝检测细胞存活率;转染后48h分析转染效率和siRNA靶分子的mRNA和蛋白表达水平。结果电穿孔后原代软骨细胞的存活率>80%,质粒的转染效率达到37.3%±5.2%;siRNA靶分子的mRNA和蛋白表达水平分别下调了75%和66%。结论成功建立了通过电穿孔介导siRNA转染小鼠原代软骨细胞的方法,达到了很好的基因沉默效果且保持了较高的细胞存活率。%Objective To develop an efficient and reliable method to transfect murine primary chondrocytes with small interfering RNA ( siRNA) by electroporation.Methods Murine primary chondrocytes were isolated and treated with pronase for 3 hours.The cells were then electroporated with either pCMV-EGFP plasmid or siRNA using a high performance electroporation buffer and optimized condi-tions.Cell viability was determined by trypan blue.The transfection efficiency and expression levels of siRNA-targeted gene were evalua-ted 48 hours post-electroporation.Results By using proper electroporation condition, 37.3%±5.2%of cells were transfected by the plasmid with high cellular viability (>80%) .Transfection of siRNA using the same electroporation resulted in effective down-regulation of its targeted gene expression at both mRNA and protein levels (75% and 66% decrease, respectively).Conclusion Transfection of murine primary chondrocytes with siRNA in this optimized electroporation condition was successful and resulted in effective gene silencing and high cellular viability.

  11. Examination of Silicate Limitation of Primary Production in Jiaozhou Bay, North China Ⅲ.Judgment Method, Rules and Uniqueness of Nutrient Limitation Among N, P,and Si

    Institute of Scientific and Technical Information of China (English)

    杨东方; 高振会; 陈豫; 张经; 王培刚

    2003-01-01

    Analysis and comparison of Jiaozhou Bay data collected from May 1991 to February 1994(12 seasonal investigations) provided bythe Ecological Station of Jiaozhou Bay revealed the characteristic spatiotemporal variation of the ambient concentration Si:DIN and Si:16P ratios and the seasonal variation of Jiaozhou Bay Si:DIN and Si:16P ratios showing that the Si:DIN ratios were < 1 throughout the year in Jiaozhou Bay; and that the Si:16P ratios were < 1 throughout Jiaozhou Bay in spring, autumn and winter. The results proved that silicate limited phytoplankton growth in spring, autumn and winter in Jiaozhou Bay. Analysis of the Si:DIN and Si:P ratios showed that the nutrient Si has been limiting the growth of phytoplankton throughout the year in some Jiaozhou Bay waters; and that the silicate deficiency changed the phytoplankton assemblage structure.icate, analysis of the nutrients N or P limitation of phytoplankton growth relying only on the N and P nutrients and DIN:P ratio could yield inaccurate conclusions. The results obtained by applying the rules of absolute and relative limitation fully support this view.continuous environmental pressure gradually changes the phytoplankton assemblage's structure and the physiology of diatoms. Diatoms requiring a great deal of silicon either constantly decrease or reduce their requirement for silicon. This will cause a series of huge changes in the ecosystem so that the whole ecosystem requires continuous renewal, change and balancing. Human beings have to reduce marine pollution and enhance the capacity of continental sources to transport silicon to sustain the continuity and stability in the marine ecosystem.

  12. Anti-VCAM-1 and anti-E-selectin SAINT-O-Somes for selective delivery of siRNA into inflammation-activated primary endothelial cells

    NARCIS (Netherlands)

    Kowalski, Piotr S; Lintermans, Lucas L; Morselt, Henriëtte W M; Leus, Niek G J; Ruiters, Marcel H J; Molema, Grietje; Kamps, Jan A A M

    2013-01-01

    Activated endothelial cells play a pivotal role in the pathology of inflammatory diseases and present a rational target for therapeutic intervention by endothelial specific delivery of short interfering RNAs (siRNA). This study demonstrates the potential of the recently developed new generation of l

  13. Step Growth of Primary Silicon in Al-Si Alloy%Al-Si合金中初晶Si的台阶生长

    Institute of Scientific and Technical Information of China (English)

    王渠东; 丁文江; 翟春泉; 徐小平; 金俊泽

    1999-01-01

    采用离心倾液法研究过共晶Al-Si合金初晶Si的生长形貌时发现,初晶Si存在生长台阶,台阶的高度为数十至数百微米,从初晶Si根部至尖端,台阶的高度逐渐变小,初晶Si存在位错台阶生长机制.这一生长机制能够形成棱柱体或棱锥体、八面体和球形初晶Si,以及产生初晶Si的分枝和形成初晶Si的生长迹线.

  14. Microstructural characteristics of in situ Mg2Si/Al-Si composite by low superheat pouring

    Directory of Open Access Journals (Sweden)

    Wu Xiaofeng

    2013-09-01

    Full Text Available To control the morphology and size of the primary and eutectic Mg2Si phases in in situ Mg2Si/Al-Si composite and achieve a feasible and reliable technique to produce appropriate feedstock for the thixo-casting and rheo-casting of this type of material, three Al-Si matrix composites reinforced by 5wt.%, 9wt.% and 17wt.% Mg2Si with hypoeutectic, eutectic and hypereutectic compositions were prepared by the low superheat pouring (LSP process. The effects of the pouring temperature (superheat on the morphology and size distribution of primary phases (primary α-Al and Mg2Si, binary (α-Al + Mg2Si eutectic cell and eutectic Mg2Si were investigated. The experimental results show that low pouring temperature (superheat not only refines the grain structure of the primary α-Al and binary (α-Al + Mg2Si eutectic cell in three composites and promotes the formation of more non-dendritic structural semi-solid metal (SSM slurry of these phases; but also refines the primary and eutectic Mg2Si phases, which seems to be attributed to the creation of an ideal condition for the nucleation and the acquisition of a high survival of nuclei caused by the LSP process.

  15. Microstructures in Centrifugal Casting of SiCp/AlSi9Mg Composites with Different Mould Rotation Speeds

    Institute of Scientific and Technical Information of China (English)

    WANG Kai; SUN Wenju; LI Bo; XUIE Hansong; LIU Changming

    2011-01-01

    Two ingots were produced by centrifugal casting at mould rotational speeds of 600 rpm and 800 rpm using 20 vol% SiCp/AlSi9Mg composite melt, respectively. The microstructure along the radial direction of cross-sectional sample of ingots was presented. SiC particles migrated towards the external circumference of the tube, and the distribution of SiC particles became uniform under centrifugal force. Voids in 20 vol% SiCp/AlSi9Mg composite melt migrated towards the inner circumference of the tube. The quantitative analysis results indicated that not only SiC particles but also primary a phases segregated greatly in centrifugal casting resulting from the transportation behavior of constitutions with different densities in the SiCp/AlSi9Mg composite melt. In addition, the eutectic Si was broken owing to the motion of SiCp/AlSi9Mg composite melt during centrifugal casting.

  16. 温度和支撑方式对1.2m SiC主镜面形的影响分析%Study on the Influence of Temperature and Support Style to the 1.2m Sic Primary Mirror Surface Figure

    Institute of Scientific and Technical Information of China (English)

    王富国

    2011-01-01

    A 1. 2 m SiC primary mirror FEA model was built to analyze temperature and support style effects on the large aperture SiC primary mirror, which was applied to the ground based on telescope. With the primary mirror in passive support and free expansion, influences of steady state temperature field, axial direction temperature gradient, radial direction temperature gradient, and internal-external temperature gradient to primary mirror surface figure were analyzed. The result indicates that the influences of the support style are not obvious, whether passive support or free expansion, and the primary mirror surface figure is big with temperature gradient. When achieving heat balance, the influence of the support style is obvious only when the primary mirror free expand, and the temperature influence is small, surface figure RMS<0. 02nm/°C. If the primary mirror adopts flexibility or floating support style, the large aperture SiC primary mirror ean be applied to the ground based telescope.%为了研究温度和支撑方式对大口径SiC主镜用于地基望远镜的影响,基于1.2 m SiC主镜建立了有限元模型,分析了主镜在被动支撑和自由膨胀时,恒定温度场,轴向温度梯度,径向温度梯度和内外温差等对主镜面形的影响.结果表明,存在温度梯度时,支撑方式影响不明显,无论是被动支撑还是自由膨胀,镜面面形均很大.在达到热平衡后,即稳态温度场下,支撑方式的影响明显,只有在主镜自由膨胀时,温度对主镜面形的影响比较小,镜面的RMS<0.02 nm/℃.因此如果主镜采用柔性支撑或浮动支撑方式,大口径SiC主镜可以应用在地基望远镜中.

  17. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Liu Jian

    2009-01-01

    Full Text Available Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  18. Study on in-situ Mg2Si/Al-Si composites with different compositions

    Institute of Scientific and Technical Information of China (English)

    Jing Qingxiu; Zhang Caixia; Huang Xiaodong

    2009-01-01

    Effects of chemical composition and heat treatment on microstructures and mechanical properties of in-situ Mg2Si/Al-Si composites were investigated. It was found that, in the microstructure of an Al-5.7wt% Mg2Si composite with 8.2wt% extra Si, the binary eutectic Mg2Si locates at the grain boundaries with an undeveloped Chinese script-like morphology, and the primary α-Al is formed into a cell structure due to the selective modification effect of the modifiers of mischmetal and Strontium salt; whereas in the composite with a near Al-Mg2Si eutectic composition and little extra Si content, the intercrescence eutectic Mg2Si formed with the binary eutectic a-Al grows into integrated Chinese script-like shape. As Si content increases, the eutectic Mg2Si dendrite becomes coarser in morphology but less in volum e fraction. Hardness and tensile strength of the cast Mg2Si/Al-Si composites do not increase with increasing of Mg content, but they are related to the size and morphology of the eutectic and primary Mg2Si phases. Heat treatment with optimal parameters is an effective way to improve the properties of the in-situ composites.

  19. Recycling of Al-Si die casting scraps for solar Si feedstock

    Science.gov (United States)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  20. Influence of Si content and heat treatment on microstructure of Al-Fe-Si alloys

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuhua; Wang Xiubin; Liu Yulin; Wang Chao

    2014-01-01

    The effect of Si addition and heat treatment on the Al-5wt.%Fe al oy has been investigated by OM, SEM-EDS and XRD. The results show that the Si plays a significant role in refining the primary Al3Fe phase. It was found that the addition of 3.0wt.% Si made the al oy present the finest and wel -distributed primary Al3Fe phase, but the Al3Fe phase almost disappeared when 5wt.% Si was added. With further increase in the Si content, some Fe-rich phases appeared in the inter-grains and coarsened. In addition, the heat treatments exert a significant impact on the microstructural evolution of the Al-5wt.%Fe-5wt.%Si al oy. After heat treatment for 28 hours at 590 ºC, the coarse platelet or blocky Fe-rich phase in Al-5wt.%Fe-5wt.%Si al oys was granulated; the phase transformation from metastable platelet Al3FeSi and blocky Al8Fe2Si to stable Al5FeSi had occurred. With the extension of heat treatment, the Si phase coarsened gradual y.

  1. Si/SiGe MMIC's

    Science.gov (United States)

    Luy, Johann-Friedrich; Strohm, Karl M.; Sasse, Hans-Eckard; Schueppen, Andreas; Buechler, Josef; Wollitzer, Michael; Gruhle, Andreas; Schaeffler, Friedrich; Guettich, Ulrich; Klaassen, Andreas

    1995-04-01

    Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper gives a survey on the state-of-the-art performance of this technology and on first applications. The key devices are IMPATT diodes for mm-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f(sub max) values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed.

  2. 与Si工艺兼容的Si/SiGe/Si HBT研究%The Study of Si/SiGe/Si HBT and Its Compatibility with Si Process

    Institute of Scientific and Technical Information of China (English)

    廖小平

    2001-01-01

    我们对Si/SiGe/Si HBT及其Si兼容工艺进行了研究,在研究了一些关键的单项工艺的基础上,提出了五个高速Si/SiGe/Si HBT结构和一个低噪声Si/SiGe/Si HBT结构,并已研制成功台面结构Si/SiGe/Si HBT和低噪声Si/SiGe/Si HBT,为进一步高指标的Si/SiGe/Si HBT的研究建立了基础.

  3. Effect of Adventitious Carbon on the Environmental Degradation of SiC/BN/SiC Composites

    Science.gov (United States)

    Ogbuji, L. U. J. T.; Yun, H. M.; DiCarlo, J.

    2002-01-01

    Pesting remains a major obstacle to the application of SiC/SiC composites in engine service and selective degradation of the boron nitride interphase at intermediate temperatures is of primary concern. However, significant progress has been made on interphase improvement recently and we now know more about the phenomenon and ways to suppress it. By screening SiC/BN/SiC materials through characterization of strength and microstructures after exposure in a burner rig, some factors that control pesting in these composites have been determined. A key precaution is careful control of elemental carbon presence in the interphase region.

  4. Rapid solidification of undercooled Al-Cu-Si eutectic alloys

    Institute of Scientific and Technical Information of China (English)

    RUAN Ying; WEI BingBo

    2009-01-01

    Under the conventional solidification condition,a liquid aluminium alloy can be hardly undercooled because of oxidation.In this work,rapid solidification of an undercooled liquid Al,80.4Cu,13.6Si,6 ternary eutectic alloy was realized by the glass fluxing method combined with recycled superheating.The re-lationship between superheating and undercooling was investigated at a certain cooling rate of the alloy melt.The maximum undercooling is 147 K (0.18 TE).The undercooled ternary eutectic is composed of α(Al) solid solution,(Si) semiconductor and β(CuAl,2) intermetallic compound.In the (Al+Si+θ) ternary eutectic,(Si) faceted phase grows independently,while (Al) and θ non-faceted phases grow coopera-tively in the lamellar mode.When undercooling is small,only (Al) solid solution forms as the leading phase.Once undercooling exceeds 73 K,(Si) phase nucleates firstly and grows as the primary phase.The alloy microstructure consists of primary (Al) dendrite,(Al+9) pseudobinary eutectic and (Al+Si+θ) ternary eutectic at small undercooling,while at large undercooling primary (Si) block,(Al+θ) pseudo-binary eutectic and (Al+Si+θ) ternary eutectic coexist.As undercooling increases,the volume fraction of primary (Al) dendrite decreases and that of primary (Si) block increases.

  5. Interface structure between epitaxial NiSi2 and Si

    Institute of Scientific and Technical Information of China (English)

    Wei-Long Liu; Wen-Jauh Chen; Ting-Kan Tsai; Hsun-Heng Tsai; Shu-Huei Hsieh

    2006-01-01

    The interface structure between the Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate has six different types: type A NiSi2 ((-1)11 )/( (-1)11 ) Si, type A NiSi2 (001)/(001) Si, type B NiSi2 (1(-1)(-1))/(1(-1)1) Si, type B NiSi2 ((-1)12)/(1(-1)2) Si, type B NiSi2 (2(-2)1)/(001) Si, and type B NiSi2 (1(-1)(4))/( 1(-1)0 ) Si. And there are one or more different atomic structures for one type of interface.

  6. 射频 Si/SiGe/Si HBT的研究%Studies on RF Si/SiGe/Si HBT

    Institute of Scientific and Technical Information of China (English)

    廖小平; 殷刚毅

    2003-01-01

    Si/SiGe/Si HBT与Si工艺兼容的研究基础上,对射频Si/SiGe/Si HBT的射频特性和制备工艺进行了研究,分析了与器件结构有关的关键参数寄生电容和寄生电阻与Si/SiGe/Si HBT的特征频率fT和最高振荡频率fmax的关系,成功地制备了fT为2.5 GHz、fmax为2.3 GHz的射频Si/SiGe/Si HBT,为具有更好的射频性能的Si/SiGe/Si HBT的研究建立了基础.

  7. Privacy and Yin Si

    Institute of Scientific and Technical Information of China (English)

    胡迪

    2007-01-01

    <正>“Privacy” is translated as yin si in Chinese.Traditionally,in the Chinese mind,yin si is associated with something that is closed or unfair.If someone is said to have yin si,meddlers(好事者) will be attracted to pry(打探) into his or her affairs.So people always state that they don’t have yin si.

  8. Electroluminescence of Si Nanocrystal-Doped SiO2

    Institute of Scientific and Technical Information of China (English)

    CHEN Dan; XIE Zhi-Qiang; WU Qian; ZHAO You-Yuan; LU Ming

    2007-01-01

    @@ We perform a comparative study on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystaldoped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.

  9. Effect of Adding Elements on Microstructure of Mg-3Si Alloy

    Directory of Open Access Journals (Sweden)

    CUI Bin

    2017-03-01

    Full Text Available The microstructure of alloy Mg-3Si(mass fraction/%, same as below after successive additions with different elements of Zn, Nd, Gd and Y was observed and the microstructure evolution was investigated by scanning electron microscopy and X-ray diffraction. The results show the primary Mg2Si particles co-exist with eutectic Mg2Si particles in binary alloy Mg-Si. With minor addition of Zn element, only primary Mg2Si can be found in ternary Mg-3Si-3Zn system while eutectic Mg2Si particles disappear. In quaternary alloy Mg-2.0Nd-3.0Zn-3.0Si, the addition of Nd element can effectively refine the primary Mg2Si particles and form some Mg41Nd5 particles. After continuous adding of Gd and Y elements into quaternary system, Gd5Si3 and YSi particles increase significantly in the alloy Mg-8.0Gd-4.0Y-2.0Nd-3.0Zn-3.0Si, while volume fraction of primary Mg2Si decrease significantly. Thermo-Calc calculation predicts that the Gibbs free energy for primary particles Gd5Si3, YSi is lower, and therefore Gd, Y atom and Si are more likely to form compounds. In Mg-8Gd-4Y-2Nd-3Zn-3Si alloy, room temperature Gibbs free energy for primary particles Mg2Si, Gd5Si3, YSi is -9.56×104, -8.72×104, -2.83×104J/mol, respectively, and the mass fraction of these particles is 8.07%, 5.27%, 1.40% respectively.

  10. Si/SiO2和Si/SiNx/SiO2超晶格的能带结构%Band structure of Si/SiO2 and Si/SiNx/SiO2 superlattices

    Institute of Scientific and Technical Information of China (English)

    魏屹; 董成军; 徐明

    2010-01-01

    利用Kronig-Penney模型从理论上计算了Si/SiO2和Si/Si/SiNx/SiO2多层膜结构中量子阱的能带结构,进一步分析了各亚层薄膜厚度对能带结构和有效质量的影响.结果发现,适当减少亚层的厚度都能使得纳米Si薄膜的带隙发生明显宽化.在Si/SiO2超晶格中,Si量子阱层带隙能量随着Si层厚度的变化符合EPLL(eV)=1.6+0.7/d2关系,与我们的计算结果十分吻合.在Si/SiNdSiO2超晶格系统中,可以通过控制各亚层厚度,尤其是Si和SiNx层厚度,均能够有效地控制发光.

  11. Laser clad AlSiCuNi functionally graded coatings

    NARCIS (Netherlands)

    Pei, Yutao; de Hosson, J.T.M.; Brebbia, CA

    2001-01-01

    This paper presents an exploration of laser clad AlSiCuNi-alloy FGCs on cast Al-alloy substrates. SEM microstructure observations indicate that, besides Si primary particles, hard Al3Ni2 compounds also exhibits a continuous increase in both particle sizes and volume fractions from the bottom to the

  12. Laser clad AlSiCuNi functionally graded coatings

    NARCIS (Netherlands)

    Pei, Yutao; de Hosson, J.T.M.; Brebbia, CA

    2001-01-01

    This paper presents an exploration of laser clad AlSiCuNi-alloy FGCs on cast Al-alloy substrates. SEM microstructure observations indicate that, besides Si primary particles, hard Al3Ni2 compounds also exhibits a continuous increase in both particle sizes and volume fractions from the bottom to the

  13. Effects of high magnetic field on modification of Al-Si alloy

    Institute of Scientific and Technical Information of China (English)

    LIAN Feng; QI Feng; LI Ting-ju; HU Guo-bing

    2005-01-01

    Effects of high magnetic field on modification of Al-6 %Si hypoeutectic alloy, Ak-12.6%Si eutectic alloy and Al-18 % Si hypereutectic alloy were studied. For the Al-6 % Si alloy, it is found that the sample modified by Na salt does not lose efficacy after remelting under high magnetic field. For the Al-12.6%Si alloy, if the sample modi fied by Na-salt is kept at the temperature of modification reaction, high magnetic field can postpone the effective time of the modification. For Al-18%Si alloy modified by P-salt, the primary Si in solidified structure concentrates at the edge of the sample and eutectic Si appears in the center of the sample under the condition without high magnetic field, while the primary Si distributes evenly in the sample when the high magnetic field is imposed. It is thought that the high magnetic field restrains the convection of the melt.

  14. Aperiodic SiSn/Si multilayers for thermoelectric applications

    Science.gov (United States)

    Tonkikh, A. A.; Zakharov, N. D.; Eisenschmidt, C.; Leipner, H. S.; Werner, P.

    2014-04-01

    We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifest that SiSn layers possess a diamond lattice structure. X-ray diffraction reveals up to 9.5 at% Sn in the crystal lattice of SiSn layers.

  15. Distribution of Si particles in hypereutectic aluminum alloy tubes prepared under electromagnetic field

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zhi-qing; LI Qiu-lin; LIU Wei; LIU Qing

    2006-01-01

    Hypereutectic Al-Si alloy tubes were produced by centrifugal casting process using an electromagnetic field (EMF). A gradient distribution of the primary Si particles was formed along the tube thickness direction. In the absence of EMF the primary Si moves to inner periphery with increasing rotation speed. The distribution of primary Si can be controlled by the EMF. With increasing electromagnetic field intensity, the primary Si moves from the inner periphery to the outer periphery of the tubes. Most of the primary Si can be driven to the outer if the electromagnetic field intensity is increased to a certain value. It is found that the particle distribution and local volume fraction vary with both the rotation speed and the electromagnetic field intensity.

  16. Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available In heterojunction solar cells, a-Si:H/c-Si heterointerface is of significant importance, since the heterointerface characteristics directly affect junction properties and thus solar cell efficiency. In this study, we have performed time resolved microwave conductivity (TRMC measurements on n-type c-Si wafers passivated on both sides with intrinsic and doped a-Si:H layers in order to investigate electrical property and passivation quality of the a-Si:H/c-Si heterojunctions. It was found that the TRMC decay time and decay curve shape varied with the laser wavelength and power intensity and also depended on sample structures. By using 1064 nm laser pulse with high excitation, differences in the decay curve shape between samples with and without p-n junction were observed. The samples containing p-n junction(s had unique slow decay mode, after the initial fast decay, which we ascribed to the release of carriers from the low-mobility amorphous layer into the high-mobility crystalline wafer as the built-in field of the junction was restored. Experimental results suggest that the TRMC is useful nondestructive technique which is suitable for primary check of the a-Si:H/c-Si heterojunctions during the solar cell fabrication process.

  17. Retrovirus-delivered siRNA

    Directory of Open Access Journals (Sweden)

    Devroe Eric

    2002-08-01

    Full Text Available Abstract Background The ability of transfected synthetic small interfering (si RNAs to suppress the expression of specific transcripts has proved a useful technique to probe gene function in mammalian cells. However, high production costs limit this technology's utility for many laboratories and experimental situations. Recently, several DNA-based plasmid vectors have been developed that direct transcription of small hairpin RNAs, which are processed into functional siRNAs by cellular enzymes. Although these vectors provide certain advantages over chemically synthesized siRNAs, numerous disadvantages remain including merely transient siRNA expression and low and variable transfection efficiency. Results To overcome several limitations of plasmid-based siRNA, a retroviral siRNA delivery system was developed based on commerically available vectors. As a pilot study, a vector was designed to target the human Nuclear Dbf2-Related (NDR kinase. Cells infected with the anti-NDR siRNA virus dramatically downregulate NDR expression, whereas control viruses have no effect on total NDR levels. To confirm and extend these findings, an additional virus was constructed to target a second gene, transcriptional coactivator p75. Conclusion The experiments presented here demonstrate that retroviruses are efficient vectors for delivery of siRNA into mammalian cells. Retrovirus-delivered siRNA provides significant advancement over previously available methods by providing efficient, uniform delivery and immediate selection of stable "knock-down" cells. This development should provide a method to rapidly assess gene function in established cell lines, primary cells, or animals.

  18. Biogeochemical cycling of Si in a California rice cropping system

    Science.gov (United States)

    Seyfferth, A.; Kocar, B. D.; Lee, J.; Fendorf, S.

    2012-12-01

    Silicon is the second most abundant element in the earth's crust, but the number of studies on the biogeochemical cycling of Si does not reflect its environmental ubiquity. While not an "essential" plant nutrient, Si is important for many plants, particularly monocots, for structural integrity and protection against disease and environmental stress. For rice, Si fertilization with N and P increases yield significantly more than N and P alone. While total Si in soil is high, much of this Si is tied up in the crystal lattice of primary and secondary minerals and is only slowly released through chemical weathering. Thus, plant-available Si may be limited particularly in highly weathered soils in humid environments where long-term chemical weathering has lead to desilicification of the soils (e.g., in Southeast Asia where most rice is grown). In such Si-depleted environments, the biocycling of Si through decaying plant litter (i.e., phytoliths) and subsequent plant uptake has proven an important component of the terrestrial biogeochemical cycling of Si. Here, we investigate the dynamics of Si cycling over a two-year period in a rice paddy in Northern California where soil incorporation of harvested rice straw has impacted the terrestrial biogeochemical cycling of Si. We use Ge/Si ratios in pore-waters to infer the contribution of chemical weathering vs. dissolution of plant phytoliths on the plant-available Si pool. We found that the Ge/Si ratios change over the growing and fallow seasons reflecting different rates of Si release through phytolith dissolution and plant uptake.

  19. Molecular modeling of alkyl monolayers on the Si (100)-2 x 1 surface

    NARCIS (Netherlands)

    Lee, M.V.; Guo, D.; Linford, M.R.; Zuilhof, H.

    2004-01-01

    Molecular modeling was used to simulate various surfaces derived from the addition of 1-alkenes and 1-alkynes to Si=Si dimers on the Si(100)-2 × 1 surface. The primary aim was to better understand the interactions between adsorbates on the surface and distortions of the underlying silicon crystal du

  20. Production of Al-Si-SiCp cast composites by injection of low-energy ball-milled Al-SiCp powder into the melt

    Science.gov (United States)

    Ghahremanian, Mohsen; Niroumand, Behzad; Panjepour, Masoud

    2012-02-01

    Al-7wt%Si-10wt%SiCp composite with uniformly distributed reinforcement particles with the average size of about 3 microns was produced by a special compocasting method in which the reinforcement was injected into the melt in the form of particulate Al-SiCp composite powder instead of SiCp. The effects of the reinforcement addition form, the solid fraction of primary alpha-aluminum particles at pouring, and stirring speed on the incorporation of reinforcement particles into the matrix were investigated. Injection of particulate Al-SiCp composite led to improved incorporation and dispersion and reduced size of SiCp. Casting from the semisolid state significantly improved the incorporation of SiCp into the matrix. The optimal solid fraction of primary alpha-aluminum particles to achieve a reasonable combination of reinforcement incorporation and fluidity of the composite slurry was recognized to be about 0.1. The incorporation of SiCp was improved by increasing the stirring speed up to 500 rpm and then gradually decreased.

  1. Prose Writer Si Yu

    Institute of Scientific and Technical Information of China (English)

    1996-01-01

    SI Yu, pen name of Zhan Shaojuan, is well known through her prose works. During the recent more than ten years, Chinese prose writing has developed rapidly, from its previous level to the present flourishing conditions. Si Yu is a distinguished woman writer, whose creative prose alternately displays either

  2. Electroluminescence from Si/SiO2 films deposited on p-Si substrates

    Institute of Scientific and Technical Information of China (English)

    马书懿; 萧勇; 陈辉

    2002-01-01

    The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a verygood rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structureat a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra ofthe structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on ELspectra are studied systematically.

  3. Influence of Si on Interfacial Combination of SiCp/Al-Mg-Si Composite

    Institute of Scientific and Technical Information of China (English)

    Han Jianmin; Li Ronghua; Li Mingwei; Cui Shihai; Li Weijing; Wang Jinhua

    2004-01-01

    The scanning electron microscopy (SEM) analysis results of Si distribution in the interface between SiC reinforcements and aluminum matrix of a stir casting SiCp/Al-Mg-Si composite were presented. Results show that there is Si precipitation deposit on the interface of the composite and Si connects with SiC reinforcements in one side and connects with aluminum matrix in the other side. Si phase plays as a connecting bridge, which contributes to the interfacial combination of SiCp/Al composite.

  4. Microstructural evolution during containerless rapid solidification of Co-Si alloys

    Institute of Scientific and Technical Information of China (English)

    姚文静; 魏炳波

    2003-01-01

    The Co-12%Si hypoeutectic, Co-12.52%Si eutectic and Co-13%Si hypereutectic alloys are rapidly solidified in a containerless environment in a drop tube. Undercoolings up to 207K (0.14TE) are obtained, which play a dominant role in dendritic and eutectic growth. The coupled zone around Co-12.52%Si eutectic alloy has been calculated, which covers a composition range from 11.6 to 12.7%Si. A microstructural transition from lamellar eutectic to divorced eutectic occurs to Co-12.52%Si eutectic droplets with increasing undercooling. The lamellar eutectic structure of the Co-12.52%Si alloy consists of εCo and Co3Si phases at small undercooling. The CoaSi phase cannot decompose completely into εCo and αCo2Si phases. As undercooling becomes larger, the Co3Si phase grows very rapidly from the highly undercooled alloy melt to form a divorced eutectic. The structural morphology of the Co-12%Si alloy droplets transforms from εCo primary phase plus lamellar eutectic to anomalous eutectic, whereas the microstructure of Co-13%Si alloy droplets solution is the primary nucleation phase. In the highly undercooled alloy melts, the growth of εCo and Co3Si phases is controlled by solutal diffusion.

  5. Apparent activation energy of subcritical crack growth of SiC/SiC composites at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Y.S.; Stackpoole, M.M.; Bordia, R. [Univ. of Washington, Seattle, WA (United States)] [and others

    1995-04-01

    The purpose of this study is to investigate the environmental effect of oxygen-containing gases on the subcritical crack growth of continuous fiber (Nicalon {open_quotes}SiC{close_quotes}) reinforced ceramic matrix (SiC) composites at elevated temperatures. This is a continuing project and the primary goal for this time period is to obtain an apparent activation energy for SiC/SiC materials with two different interfaces: carbon and boron nitride coatings. In the past six months, the authors have conducted studies of subcritical crack growth on SiC/SiC composite materials in a corrosive (O{sub 2}) as well as an inert (Ar) atmosphere for temperatures ranging from 800 to 1100{degree}C.

  6. Thermal Properties of Al-50%Si Alloys

    Institute of Scientific and Technical Information of China (English)

    Akio Nishimoto; Katsuya Akamatsu; Kazuyoshi Nakao; Kazuo Ichii

    2004-01-01

    In order to prepare a hypereutectic Al-Si alloy with low coefficients of thermal expansion (CTE), Al-50was produced by powder metallurgy (P/M) and ingot metallurgy (I/M). P/M specimen was prepared by mechanical alloying(MA) and pulsed electric-current sintering (PECS). The microstructures of specimens were characterized by optical microscopy and scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectroscopy (EDS). Vickers microhardness and CTE measurements were performed. The grains in the P/M specimen were refined with increasing MA time. Primary Si and eutectic Si in the I/M specimen were remarkably refined by adding minute amounts of Sr. The CTE of P/M and I/M specimens were estimated as 7.8×10-6 and 10.7×10-6, respectively. These values were as same as a CTE of Al2O3 ceramics.

  7. DIRECTIONALLY SOLIDIFIED MICROSTRUCTURE OF AN ULTRA-HIGH TEMPERATURE Nb-Si-Ti-Hf-Cr-Al ALLOY

    Institute of Scientific and Technical Information of China (English)

    P.Guan; X.P.Guo; X.Ding; J.Zhang; L.M.Gao; K.Kusabiraki

    2004-01-01

    The directionally solidified samples of an ultra-high temperature Nb-Si-Ti-Hf-Cr-Al alloy have been prepared with the use of an electron beam floating zone melting (EBFZM)furnace, and their microstructural characteristics have been analyzed. All the primary dendrites of Nb solid solution (Nbss), eutectic colonies of Nbss plus (Nb, Ti)3Si/(Nb,Ti)5Si3 and chains of (Nb, Ti)3Si/(Nb, Ti)5Si3 plates align along the growth direction of the samples. With increasing of the withdrawing rate, the microstructure is refined, and the amounts of Nbss+(Nb, Ti)3Si/(Nb, Ti)5Si3 eutectic colonies and (Nb, Ti)3Si/(Nb, Ti)5Si3 plates increase. There appear nodes in the (Nb, Ti)3Si/(Nb,Ti)5Si3 plates.

  8. Introduction of atomic H into Si3N4/SiO2/Si stacks

    Institute of Scientific and Technical Information of China (English)

    JIN Hao; WEBER K.J.; LI Weitang; BLAKERS A.W.

    2006-01-01

    Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defectsin the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.

  9. Primary fibromyalgia

    DEFF Research Database (Denmark)

    Jacobsen, S; Jensen, L T; Foldager, M

    1990-01-01

    Serum concentrations of procollagen type III aminoterminal peptide have previously been reported to be low in some patients with primary fibromyalgia and the aim of this study was to determine if such patients differ clinically from primary fibromyalgia patients with normal levels of procollagen...... type III aminoterminal peptide. Subjective symptoms, tender points and dynamic muscle strength in 45 women with primary fibromyalgia were related to serum concentrations of procollagen type III aminoterminal peptide. Patients with low serum concentrations of procollagen type III aminoterminal peptide...... concentrations of procollagen type III aminoterminal peptide of primary fibromyalgia patients are connected to the disease impact....

  10. Electronic Structure of Si1-xIVx/Si Superlattices on Si(001)

    Institute of Scientific and Technical Information of China (English)

    CHEN Jie; L(U) Tie-Yu; HUANG Mei-Chun

    2007-01-01

    We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xIVx/Si (x = 0.125, 0.25, 0.5,IV=Ge, Sn) superlattices (SLs) grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875 Ge0.125/Si, Si0.75 Ge0.25/Si and Si0.875Sn0.125/Si axe the Γ-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xIVx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.

  11. Photoelectric properties of n-SiC/n-Si heterojunctions

    Directory of Open Access Journals (Sweden)

    Semenov A. V.

    2012-10-01

    Full Text Available Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

  12. Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces

    Science.gov (United States)

    Jang, Jin-Wook; Hayes, Scott; Lin, Jong-Kai; Frear, Darrel R.

    2004-06-01

    The dissolution behavior of Si (100) and (111) dies by eutectic AuSi solder was investigated. On the Si (100) surface, the dissolution primarily occurred by the formation of craters resulting in a rough surface. The dissolution of the Si (111) resulted in a relatively smooth surface. The morphology of the Si (100) surface during a AuSi soldering reaction exhibited more time-dependent behavior and the etching craters on a Si (100) surface grew larger with time whereas Si (111) did not significantly change. This difference was ascribed to the surface energy differences between Si (111) and (100) surfaces that resulted in the two- and three-dimensional dissolution behaviors, respectively. This difference plays an important role in the formation of voids during the AuSi die bonding. The etching craters on Si (100) act as a AuSi solder sink and the regions surrounded by etch pits tend to become voids. For Si (111), flat surfaces were observed in the voided regions. Cross section analysis showed that no solder reaction occurred in the voided region of the Si (111) surface. This suggests the possibility of the formation of a thin inert layer in a potentially voided region prior to assembly. To achieve void-free die bonding, different parameters must be adjusted to the Si (100) and Si (111) surfaces with the AuSi alloy.

  13. Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers

    Institute of Scientific and Technical Information of China (English)

    MA Zhong-Yuan; HUANG Xin-Fan; CHEN Kun-Ji; FENG Duan; HAN Pei-Gao; LI Wei; CHEN De-Yuan; WEI De-Yuan; QIAN Bo; LI Wei; XU Jun; XU Ling

    2007-01-01

    We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4 nm. The role of hydrogen and oxygen is discussed in detail.

  14. A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

    Institute of Scientific and Technical Information of China (English)

    Ma Shu-Yi; Chen Hui; Xiao Yong; Ma Zi-Jun; Sun Ai-Min

    2004-01-01

    Ge/SiO2 and Si/SiO2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650-660 nm. The EL mechanisms of the structures are discussed.

  15. a-Si/c-Si heterojunction solar cells on SiSiC ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    LI Xudong; XU Ying; CHE Xiaoqi

    2006-01-01

    Silicon thin-film solar cells are considered to be one of the most promising cells in the future for their potential advantages, such as low cost, high efficiency, great stability, simple processing, and none-pollution. In this paper, latest progress on poly-crystalline silicon solar cells on ceramic substrates achieved by our group was reported. Rapid thermal chemical vapor deposition (RTCVD) was used to deposited poly-crystalline silicon thin films, and the grains of as-grown film were enlarged by Zone-melting Recrystallization (ZMR). As a great changein cell's structure, traditional diffused pn homojunction was replaced by a-Si/c-Si heterojunction, which lead is to distinct improvement in cell's efficiency.A conversion efficiency of 3.42% has been achieved on 1cm2 a-Si/c-Si heterojunction solar cell ( Isc =16.93 mA, Voc =310.9 mV, FF =06493, AM =1.5 G,24 ℃), while the cell with diffused homojunction only gotan efficiency of 0.6%. It indicates that a-Si emitter formed at low temperature might be more suitable for thin film cell on ceramics.

  16. Features of Mg2Si Layer Growth in Si/Mg2Si Multilayers

    Directory of Open Access Journals (Sweden)

    L.E. Konotopskyi

    2016-06-01

    Full Text Available Features of magnesium siliced layer growth in Si/Mg2Si multilayers in initial state and after thermal annealing were studied by methods of transmission electron microscopy and X-Ray scattering. As-deposited magnesium silicide layers are amorphous with nanocrystal inclusions of metastable h-Mg2Si. Formation of Mg2Si in hexagonal modification occurs under the influence of stress produced by silicon layers. At T = 723 К Mg2Si layers finished crystallizes in hexagonal modification, with some coarsening of grains. That is accompanied with 7.3 % reduction in period of the Si/Mg2Si multilayer.

  17. Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film

    Institute of Scientific and Technical Information of China (English)

    ZHANG Kai-biao; MA Shu-yi; MA Zi-jun; CHEN Hai-xia

    2006-01-01

    The samples of Au/(Si/SiO2)/p-Si structure were fabricated by using the R.F magnetron sputtering technique.Its carrier transport and electroluminescence mechanism were studied from the I-V curves and EL spectra by using the Configuration Coordinate as a theoretical model.The result indicates that there are two defect centers in SiO2 films.The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.

  18. Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure

    Institute of Scientific and Technical Information of China (English)

    Liu Zhihong; Chen Changchun; Lin Huiwang; Xiong Xiaoyi; Dou Weizhi; Tsien Pei-Hsin

    2004-01-01

    UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.

  19. Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes

    Science.gov (United States)

    Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2017-08-01

    Multi-layered SiC composites consisting of monolithic SiC and a SiCf/SiC composite are one of the accident tolerant fuel cladding concepts in pressurized light water reactors. To evaluate the integrity of the SiC fuel cladding under normal operating conditions of a pressurized light water reactor, the hydrothermal corrosion behavior of multi-layered SiC composite tubes was investigated in the simulated primary water environment of a pressurized water reactor without neutron fluence. The results showed that SiC phases with good crystallinity such as Tyranno SA3 SiC fiber and monolithic SiC deposited at 1200 °C had good corrosion resistance. However, the SiC phase deposited at 1000 °C had less crystallinity and severely dissolved in water, particularly the amorphous SiC phase formed along grain boundaries. Dissolved hydrogen did not play a significant role in improving the hydrothermal corrosion resistance of the CVI-processed SiC phases containing amorphous SiC, resulting in a significant weight loss and reduction of hoop strength of the multi-layered SiC composite tubes after corrosion.

  20. Oxide layer dissolution in Si/SiO{sub x}/Si wafer bonded structures

    Energy Technology Data Exchange (ETDEWEB)

    Pippel, E.; Werner, P.; Goesele, U. [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany); Vdovin, V. [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Institute of Rare Metals Giredmet, Moscow (Russian Federation); Zakharov, N.

    2009-10-15

    The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are separated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si-Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si-Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

    Institute of Scientific and Technical Information of China (English)

    CHEN Chang-Chun; LIU Zhi-Hong; HUANG Wen-Tao; DOU Wei-Zhi; ZHANG Wei; TSIEN Pei-Hsin; ZHU De-Zhang

    2003-01-01

    Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.

  2. Si/SiGe/Si HBT的直流特性和低频噪声%Si/SiGe/Si HBT's DC Characterization and Its Low-frequency Noise

    Institute of Scientific and Technical Information of China (English)

    廖小平; 张中平

    2003-01-01

    在对Si/SiGe/Si HBT及其Si兼容工艺的研究基础上,研制成功低噪声Si/SiGe/Si HBT,测试和分析了它的直流特性和低频噪声特性,为具有更好的低噪声性能的Si/SiGe/Si HBT的研究建立了基础.

  3. 四物汤合失笑散加味联合吲哚美辛治疗气滞血瘀型原发性痛经40例%Modified SiWuTang and ShiXiaoSan Combined with Indomatacin in Treating 40 Cases of Primary Dysmenorrhea of Qi Stagnation and Blood Stasis Pattern

    Institute of Scientific and Technical Information of China (English)

    刘丽萍

    2013-01-01

    目的:观察四物汤合失笑散加味联合吲哚美辛治疗气滞血瘀型原发性痛经的临床疗效.方法:将80例患者随机分为观察组和对照组各40 例.2 组患者均给予吲哚美辛治疗,25 mg/ 次,4 次/d,口服.观察组同时在月经来潮前5 天给予四物汤合失笑散加减,水煎分服,1 剂/d,经后2 天停药.2 组均以1 个月经周期为1 个治疗周期,连续治疗3个周期后观察疗效.结果:全血高切黏度(200/s)、低切黏度(3/s)、血浆黏度2组治疗后均较治疗前明显改善(P<0.05),且治疗后观察组与对照组相比差异显著(P<0.05).观察组治愈率为52.50%,总有效率为92.50%;对照组治愈率为35.00%,总有效率为77.50%,2 组相比差异显著(P<0.05).结论:四物汤合失笑散加味联合吲哚美辛治疗气滞血瘀型原发性痛经疗效显著.%Objective: To observe curative effects of modified SiWuTang and ShiXiaoSan combined with indomatacin in the treatment for primary dysmenorrhea of Qi stagnation and blood stasis pattern. Method: Eighty patients were randomly divided into the observation group and the control group. Both groups received oral indomatacin, 25 mg each time, 4 times each day. The observation group took modified SiWuTang and ShiXiaoSan in the five days of the periods, decocted with water, one dose each day, till the 2nd day when the period finished. One menstrual cycle was one course of treatment. Curative effects were explored after three consecutive courses of treatment. Result: Whole blood high shear viscosity (200/s), low shear viscosity (3/s) and plasma viscosity of both groups were improved after treating than before treating significantly (P<0.05), and the observation groups showed significant difference compared with the control group after treating (P<0.05). Cure rate and total effective rate of the observation group were 52.50% and 92.50% , superior to 35.00% and 77.50% of the control group with significant difference (P<0.05). Conclusion

  4. Microstructural characteristics and properties in centrifugal casting of SiC_p/Zl104 composite

    Institute of Scientific and Technical Information of China (English)

    WANG Kai; XUE Han-song; ZOU Mao-hua; LIU Chang-ming

    2009-01-01

    The microstructural characteristics and Brinell hardness of a cylinder produced by centrifugal casting were investigated using 20% (volume fraction) SiC_p/Zl104 composites.Macrostructure and XRD analysis show that most of SiC particles segregate to the external circumference of the cylinder,the other SiC particles maintain in the inner circumference of the cylinder,and a free particle zone is left in the middle circumference of the cylinder.Microstructural characteristics and quantitative assessment of SiC particles show that most of congregated SiC particles in 20%SiC_p/Zl104 composites are dispersed by centrifugal force,and the other congregated SiC particles and most of alumina oxide are segregated to the inner circumference of the cylinder.The SiC particles in aluminum melt can promote the refinement of primary α(Al) during solidification,and fine primary α(Al) grains can also promote the uniform distribution of SiC particles.Brinell hardness of SiC_p/Zl104 composites is connected with not only the volume fraction of SiC particles,but also the distribution of SiC particles in matrix alloy.

  5. Microstructural evolution and mechanical properties of hypereutectic Al–Si alloy processed by liquid die forging

    Indian Academy of Sciences (India)

    F F Wu; S T Li; G A Zhang; F Jiang

    2014-08-01

    The microstructural evolution and mechanical properties of a hypereutectic Al–Si alloy processed by liquid die forging were investigated. It is found that the grain size of the primary Si was significantly reduced by liquid die forging with increased pressure. The volume fraction of eutectic silicon was decreased with increased pressure. By liquid die forging with pressure up to 180 MPa, the average size of the primary Si was reduced to about 18 m, which results in the remarkable increase in the fracture strength and hardness of the hypereutectic Al–Si alloy.

  6. Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures

    Institute of Scientific and Technical Information of China (English)

    HAN Ping; CHENG Xue-Mei; Masao Sakuraba; YoungCheon Jeong; Takashi Matsuura; Junichi Murota

    2000-01-01

    P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6 Ge0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si1-yCy layer on the characteristics of the devices was shown by comparing the current-voltage (Ⅰ-Ⅴ) characteristics of RTD's of the barriers of Si layers with that of Si/Si1-yCy/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si1-yCy/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si1-yCy/Si barriers. The possible mechanism for the observed Ⅰ-Ⅴcharacteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si1-yCy layers in the Si/Si1-yCy/Si barriers.

  7. Primary productivity

    Digital Repository Service at National Institute of Oceanography (India)

    Verlecar, X.N.; Parulekar, A.H.

    Photosynthetic production in the oceans in relation to light, nutrients and mixing processes is discussed. Primary productivity in the estuarine region is reported to be high in comparison to coastal and oceanic waters. Upwelling phenomenon...

  8. Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure

    Energy Technology Data Exchange (ETDEWEB)

    Di Zengfeng [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Zhang Miao [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Liu Weili [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Zhu Ming [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Lin Chenglu [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Chu, Paul K. [Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk

    2005-12-05

    An improved technique is demonstrated to fabricate silicon-germanium on insulator (SGOI) starting with a sandwiched structure of Si/SiGe/Si. After oxidation of the sandwiched structure and successive annealing, a relaxed SiGe-on-insulator (SGOI) structure is produced. Our results indicate that the added Si cap layer is advantageous in suppressing Ge loss at the initial stage of SiGe oxidation and the subsequent annealing process homogenizes the Ge fraction. Raman measurements reveal that the strain in the SiGe layer is fully relaxed at high oxidation temperature ({approx}1150 deg. C) without generating any threading dislocations and crosshatch patterns, which generally exist in the relaxed SiGe layer on bulk Si substrate.

  9. Primary hyperparathyroidism

    OpenAIRE

    Madkhali, Tarıq; Alhefdhi, Amal; Chen, Herbert; Elfenbein, Dawn

    2016-01-01

    Primary hyperparathyroidism is a common endocrine disorder caused by overactivation of parathyroid glands resulting in excessive release of parathyroid hormone. The resultant hypercalcemia leads to a myriad of symptoms. Primary hyperparathyroidism may increase a patient’s morbidity and even mortality if left untreated. During the last few decades, disease presentation has shifted from the classic presentation of severe bone and kidney manifestations to most patients now being diagnosed on rou...

  10. Endotaxial Si nanolines in Si(001):H

    Science.gov (United States)

    Bianco, F.; Owen, J. H. G.; Köster, S. A.; Mazur, D.; Renner, Ch.; Bowler, D. R.

    2011-07-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  11. Universal Converter Using SiC

    Energy Technology Data Exchange (ETDEWEB)

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  12. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  13. Annealing Behavior of Si1-xGex/Si Heterostructures

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of Si1-xGex/Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si1-xGex layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.

  14. Si nanoparticle interfaces in Si/SiO solar cell materials

    DEFF Research Database (Denmark)

    Kilpeläinen, S.; Kujala, J.; Tuomisto, F.

    2013-01-01

    Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One...... of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from...

  15. Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Xiang; HUANG Jian; ZHANG Xian-Gao; DING Hong-Lin; YU Lin-Wei; HUANG Xin-Fan; LI Wei; XU Jun; CHEN Kun-Ji

    2008-01-01

    @@ The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm,respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures.Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage (C- V) hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample.

  16. Helimagnetic order in bulk MnSi and CoSi/MnSi superlattices

    Science.gov (United States)

    Loh, G. C.; Khoo, K. H.; Gan, C. K.

    2017-01-01

    Skyrmions are nanoscopic whirls of spins that reside in chiral magnets. It is only fairly recent that a plethora of applications for these quasiparticles emerges, especially in data storage. On the other hand, spin spirals are the periodic analogs of skyrmions, and are equally imperative in the course of exploration to enhance our understanding of helimagnetism. In this study, a new infrastructure based on the B20 compound, MnSi is propounded as a hosting material for spin spirals; alternating thin layers of CoSi and MnSi in the superlattice form provides a facile way of varying the properties of the spin spirals across a continuum. Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW)-based density functional theory (DFT), the spin order of bulk MnSi, MnSi film, and the CoSi/MnSi superlattice is investigated. Spin dispersion plots as a function of propagation vectors show that the spiral size changes in the presence of CoSi - we find that the size of the spiral is reduced in the superlattice with thin CoSi layers (CoSi:MnSi=1:1 thickness ratio), whilst at a larger CoSi:MnSi=2:1 thickness ratio, the material behaves as a ferromagnet. In a similar fashion, the spin moment and orbital occupancy depend significantly on the thickness of the CoSi layers. However, the exchange interaction between Mn atoms appears to be generally impervious to the presence of CoSi. Succinctly, the CoSi/MnSi superlattice could be an excellent functional material in data storage applications.

  17. Photoluminescence from SiO sub 2 /Si/SiO sub 2 structures

    CERN Document Server

    Photopoulos, P

    2003-01-01

    Si layers were developed on pre-oxidized Si wafers by decomposition of silane in a low pressure chemical vapour deposition reactor. By keeping the deposition time constant (2 min) three sets of samples were fabricated at deposition temperatures equal to 580, 610 and 625 deg C. The deposited Si layers were thinned by high temperature dry oxidation thus forming SiO sub 2 /Si/SiO sub 2 structures. Room temperature photoluminescence (PL) measurements showed that for those samples in which the thickness of the remaining Si layer was greater than approx 6 nm, the spectra exhibited a peak at approx 650 nm. Prolonged oxidations led to the formation of SiO sub 2 /nanocrystalline-Si/SiO sub 2 structures in which the thickness of the remaining nanocrystalline Si (nc-Si) layer was smaller than 3 nm. The PL spectra obtained from these structures were at least ten times stronger compared to the previous ones. The PL peak wavelength exhibited a weak dependence on the nc-Si layer thickness shifting from 800 to 720 nm for nc-...

  18. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  19. Primary Myelofibrosis

    Science.gov (United States)

    ... the blood cells. Symptoms of primary myelofibrosis include pain below the ribs on the left side and feeling very tired. ... if you have any of the following: Feeling pain or fullness below the ribs on the left side. Feeling full sooner than ...

  20. [Primary hyperaldosteronism

    NARCIS (Netherlands)

    Meiracker, A.H. van den; Deinum, J.

    2003-01-01

    Primary hyperaldosteronism (PHA), autonomic secretion of aldosterone by the adrenal gland, is rare. PHA usually results in therapy-resistant hypertension and is often but not always accompanied by hypokalaemia. Common causes of PHA are an aldosterone-producing adenoma, idiopathic aldosterone hyperse

  1. [Primary hyperaldosteronism

    NARCIS (Netherlands)

    Meiracker, A.H. van den; Deinum, J.

    2003-01-01

    Primary hyperaldosteronism (PHA), autonomic secretion of aldosterone by the adrenal gland, is rare. PHA usually results in therapy-resistant hypertension and is often but not always accompanied by hypokalaemia. Common causes of PHA are an aldosterone-producing adenoma, idiopathic aldosterone hyperse

  2. Primary Processing

    NARCIS (Netherlands)

    Mulder, W.J.; Harmsen, P.F.H.; Sanders, J.P.M.; Carre, P.; Kamm, B.; Schoenicke, P.

    2012-01-01

    Primary processing of oil-containing material involves pre-treatment processes, oil recovery processes and the extraction and valorisation of valuable compounds from waste streams. Pre-treatment processes, e.g. thermal, enzymatic, electrical and radio frequency, have an important effect on the oil r

  3. Quantum devices using SiGe/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Karunasiri, R.P.G.; Wang, K.L. (Univ. of California, Los Angeles (United States))

    Strained-layer Si{sub 1-x}Ge{sub x}/Si heterostructures have created a great deal of interest due to the potential of integration with the conventional silicon very large scale integrated technology. With the current advances in silicon molecular beam epitaxy (Si-MBE) and other low-temperature epitaxial techniques, many Si{sub 1-x}Ge{sub x}/Si heterojunction devices have been realized. For example, among those realized are avalanche photodiodes, modulation-doped field-effect transistors, heterojunction bipolar transistors, and more recently, resonant tunneling structures, hot-carrier transistors, and quantum well metal-oxide-semiconductor field-effect transistors. In this paper several quantum size effects in strained Si{sub 1-x}Ge{sub x} layers and their potential in device applications will be reviewed. Among those to be discussed are resonant tunneling, miniband transport, and intersubband absorption in Si{sub 1-x}Ge{sub x}/Si superlattice structures, optical properties of monolayer Si{sub m}Ge{sub n} superlattices, and observation of large Stark effect associated with interband transition between quantized states in Si{sub 1-x}Ge{sub x}/Si quantum well structures.

  4. Microstructures variation of spray formed Si-30%Al alloy during densification process

    Institute of Scientific and Technical Information of China (English)

    WEI Yan-guang; XIONG Bai-qing; ZHANG Yong-an; LIU Hong-wei; WANG Feng; ZHU Bao-hong

    2006-01-01

    Microstructure variation of spray-formed Si-30%Al alloy during densification process by hot pressing was studied. The results indicate that the microstructure of as-deposited preforms is fine and homogenous. The primary silicon phases distributing in aluminium matrix evenly are fine and irregular. Aluminium matrix is divided into two groups: supersaturated α-Al phase or α-Al phase and Al-Si pseudo-eutectic phase or Al-Si eutectic phase. During hot pressing, the primary silicon and the aluminium matrix realign as follows: the primary silicon fractures at a given compressive stress, the particles congregates in microzone with increasing stress, and the aluminium matrix flows and connects in harness. Al-Si pseudo-eutectic phase turns into Al-Si eutectic phase due to the diffusion of atoms during densification process.

  5. High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

    Science.gov (United States)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

    2005-01-01

    III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si

  6. Highly sensitive NIR PtSi/Si-nanostructure detectors

    Science.gov (United States)

    Li, Hua-gao; Guo, Pei; Yuan, An-bo; Long, Fei; Li, Rui-zhi; Li, Ping; Li, Yi

    2016-10-01

    We report a high external quantum efficiency (EQE) photodiode detector with PtSi/Si-nanostructures. Black silicon nanostructures were fabricated by metal-assist chemical etching (MCE), a 2 nm Pt layer was subsequently deposited on black silicon surface by DC magnetron sputtering system, and PtSi/Si-nanostructures were formed in vacuum annealing at 450 oC for 5 min. As the PtSi/Si-nanostructures presented a spiky shape, the absorption of incident light was remarkably enhanced for the repeat reflection and absorption. The breakdown voltage, dark current, threshold voltage and responsivity of the device were investigated to evaluate the performance of the PtSi/Si-nanostructures detector. The threshold voltage and dark currents of the PtSi/Si-nanostructure photodiode tends to be slightly higher than those of the standard diodes. The breakdown voltage remarkably was reduced because of existing avalanche breakdown in PtSi/Si-nanostructures. However, the photodiodes had high response at room temperature in near infrared region. At -5 V reverse bias voltage, the responsivity was 0.72 A/W in 1064 nm wavelength, and the EQE was 83.9%. By increasing the reverse bias voltage, the responsivity increased. At -60 V reverse bias voltage, the responsivity was 3.5 A/W, and the EQE was 407.5%, which means the quantum efficiency of PtSi/Si-nanostructure photodiodes was about 10 times higher than that of a standard diode. Future research includes how to apply this technology to enhance the NIR sensitivity of image sensors, such as Charge Coupled Devices (CCD).

  7. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    Science.gov (United States)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  8. The Mechanical Strength of Si Foams in the Mushy Zone during Solidification of Al–Si Alloys

    Science.gov (United States)

    Lim, Jeon Taik; Youn, Ji Won; Seo, Seok Yong; Kim, Ki Young; Kim, Suk Jun

    2017-01-01

    The mechanical strength of an Al-30% Si alloy in the mushy zone was estimated by using a novel centrifugation apparatus. In the apparatus, the alloy melt was partially solidified, forming a porous structure made of primary Si platelets (Si foam) while cooling. Subsequently, pressure generated by centrifugal force pushed the liquid phase out of the foam. The estimated mechanical strength of the Si foam in the temperature range 850–993 K was very low (62 kPa to 81 kPa). This is about two orders of magnitude lower than the mechanical strength at room temperature as measured by compressive tests. When the centrifugal stress was higher than the mechanical strength of the foam, the foam fractured, and the primary Si crystallites were extracted along with the Al-rich melt. Therefore, to maximize the centrifugal separation efficiency of the Al-30% Si alloy, the centrifugal stress should be in the range of 62–81 kPa. PMID:28772695

  9. Investigation on laser cladding of MoSi2 powder on steel

    Institute of Scientific and Technical Information of China (English)

    Laiqi Zhang; Guangnan Chen; Zuqing Sun

    2005-01-01

    The feasibility of the fabrication of coatings for elevated-temperature structural applications by laser cladding MoSi2 powder on steel was investigated. A dense and crack-free fine coating, well-bonded with the substrate has been obtained by this technique.This coating consists of FeMoSi, Fe2Si and a small amount of Mo5Si3 due to dilution of the substrate in the coating. The microstructure of the coating is characterized of typical fine dendrites. The dendrites are composed of FeMoSi primary phase, and the interdendritic areas are two eutectic phases of FeMoSi and Fe2Si. The hardness of the coating reaches 845 Hv0.5, 3.7 times larger than that of the steel substrate (180 Hv0.5).

  10. Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Warren, Emily L.; Dameron, Arrelaine; Norman, Andrew G.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-06-14

    We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 <; 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

  11. Hyperthyroidism (primary)

    DEFF Research Database (Denmark)

    Nygaard, Birte

    2010-01-01

    Hyperthyroidism is characterised by high levels of serum thyroxine and triiodothyronine, and low levels of thyroid-stimulating hormone. The main causes of hyperthyroidism are Graves' disease, toxic multinodular goitre, and toxic adenoma. About 20 times more women than men have hyperthyroidism....... METHODS AND OUTCOMES: We conducted a systematic review and aimed to answer the following clinical questions: What are the effects of drug treatments for primary hyperthyroidism? What are the effects of surgical treatments for primary hyperthyroidism? What are the effects of treatments for subclinical...... hyperthyroidism? We searched: Medline, Embase, The Cochrane Library, and other important databases up to February 2010 (Clinical Evidence reviews are updated periodically, please check our website for the most up-to-date version of this review). We included harms alerts from relevant organisations such as the US...

  12. Hypereutectic AlSi Alloy: Gathering of 3D Microstructure Data

    Science.gov (United States)

    Schaberger-Zimmermann, E.; Mathes, M.; Zimmermann, G.

    2016-08-01

    Hypereutectic and eutectic AlSi-base alloys find frequent application in casting automotive components. The properties of this type of alloy depend significantly on their solidification microstructure, especially the size, shape, and distribution of primary and eutectic silicon. The serial sectioning technique was applied for determining the three-dimensional (3D) microstructure of an Al-18wt.%Si alloy. For clear identification of both the larger primary Si particles grown in the melt and the fine lamellar eutectic Si, a series of two-dimensional equidistant cross sections were metallographically prepared. The microstructure in these cross sections was detected and observed at high resolution using a light microscope. The images were stored in a digital library. The 3D reconstruction of primary Si particles and AlSi eutectic was achieved through the application of various software tools. This provided data about the faceted growth behavior of octahedral Si particles and feathery eutectic Si. The image stack was also imported to hierarchical data format (version 5) (HDF5) open source format, thus, enabling availability of the 3D image data to the wider community. In this way, 3D reconstructions of this kind can contribute to a greater understanding of processing/microstructure property relationships in hypereutectic AlSi alloys.

  13. Molecular dynamics study on the nucleation of Al-Si melts on sheet substrates at the nanoscale.

    Science.gov (United States)

    Liu, Sida; Zhou, Xuyan; Wu, Weikang; Zhu, Xiangzhen; Duan, Yunrui; Li, Hui; Wang, Xin

    2016-02-28

    Molecular dynamics (MD) simulations are performed to study the freezing process of Al-Si melts on heterogeneous Si substrates in detail. We highlight the inherent nanostructure of both the Si primary phase and the Al-Si binary phase. It is found for the first time that the primary Si phase displays a "pyramidal configuration" when the Al-Si melt congeals. Experimental measurements could also verify our simulation results. It can be found that the binary Al-Si phase turns into a "Si-Al-Si sandwich construction" during solidification, regardless of freezing on a single substrate or in the restricted space between substrates. This peculiar phenomenon results from the combined effects of the van der Waals potential well and the interatomic interaction between Al and Si. Furthermore, it is also able to control the thickness of the Si atomic shell of the "sandwich construction", resulting in the silicene-like unilaminar Si nanostructure. Our findings provide novel strategies to fabricate desired shaped nanostructures by means of nanocasting in Al-Si melts at the nanoscale.

  14. Hyperthyroidism (primary)

    OpenAIRE

    Nygaard, Birte

    2008-01-01

    Hyperthyroidism is characterised by high levels of serum thyroxine and triiodothyronine, and low levels of thyroid-stimulating hormone. Thyrotoxicosis is the clinical effect of high levels of thyroid hormones, whether or not the thyroid gland is the primary source.The main causes of hyperthyroidism are Graves' disease, toxic multinodular goitre, and toxic adenoma.About 20 times more women than men have hyperthyroidism.

  15. Hyperthyroidism (primary)

    OpenAIRE

    Nygaard, Birte

    2010-01-01

    Hyperthyroidism is characterised by high levels of serum thyroxine and triiodothyronine, and low levels of thyroid-stimulating hormone (TSH). Thyrotoxicosis is the clinical effect of high levels of thyroid hormones, whether or not the thyroid gland is the primary source.The main causes of hyperthyroidism are Graves' disease, toxic multinodular goitre, and toxic adenoma.About 20 times more women than men have hyperthyroidism.

  16. Radiation-induced plasmons in Si-SiO2

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The first level plasmons of Si in the pure Si state (corresponding to bonding energy (BE) of 116.95 eV) and in the SiO2 state (corresponding to BE of 122.0 eV) of Si-SiO2 prepared by irradiation hard and soft processing were studied with XPS before and after 60Co radiation.The experimental results indicate thatthere was an interface consisting of the two plasmons,this interface was extended by 60Co radiation, the fractions of the plasmon for Si in the Si-SiO2 werechanged with the variation of radiation dosage,the difference of the change in fraction of plasmonsfor the two kinds of samples was that the soft variedfaster than hard, the change of concentrations inplasmons for both hard and soft Si-SiO2 irradiatedin positive bias field were greater than that in bias-free field.The experimental results are explained from the view point of energy absorbed in form of quantization.

  17. Comparison of thermoelectric properties of nanostructured Mg2Si, FeSi2, SiGe, and nanocomposites of SiGe–Mg2Si, SiGe–FeSi2

    Directory of Open Access Journals (Sweden)

    Amin Nozariasbmarz

    2016-10-01

    Full Text Available Thermoelectric properties of nanostructured FeSi2, Mg2Si, and SiGe are compared with their nanocomposites of SiGe–Mg2Si and SiGe–FeSi2. It was found that the addition of silicide nanoinclusions to SiGe alloy maintained or increased the power factor while further reduced the thermal conductivity compared to the nanostructured single-phase SiGe alloy. This resulted in ZT enhancement of Si0.88Ge0.12–FeSi2 by ∼30% over the broad temperature range of 500-950 °C compared to the conventional Si0.80Ge0.20 alloy. The Si0.88Ge0.12–Mg2Si nanocomposite showed constantly increasing ZT versus temperature up to 950 °C (highest measured temperature reaching ZT ∼ 1.3. These results confirm the concept of silicide nanoparticle-in-SiGe-alloy proposed earlier by Mingo et al. [Nano Lett. 9, 711–715 (2009].

  18. Thermal conductivity/diffusivity of SiC-Mullite and SiC-SiC composites

    OpenAIRE

    1987-01-01

    The purposes of this study were to determine as a function of temperature the thermal diffusivity and/or thermal conductivity of SiC-Mullite and SiC-SiC, and to explain the observed behavior in terms of changes in temperature, microstructure, composition, and/or orientation. Materials used in the SiC-Mullite study consisted of single crystal SiC whiskers (prepared from rice hulls or by the vapor-liquid-solid process) dispersed within a polycrystalline mullite matrix. Dur...

  19. Visible photoluminescence related to Si precipitates in Si[sup +]-implanted SiO[sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu-Iwayama, Tsutomu; Ohshima, Mitsutoshi; Niimi, Tetsuji (Aichi Univ. of Education (Japan). Dept. of Materials Science); Nakao, Setsuo; Saitoh, Kazuo (Government Industrial Research Inst., Nagoya (Japan)); Fujita, Tetsuo (Shizuoka Inst. of Science and Technology (Japan)); Itoh, Noriaki (Nagoya Univ. (Japan). Dept. of Physics)

    1993-08-02

    We have investigated visible photoluminescence from Si[sup +]-implanted SiO[sub 2]. It is found that a luminescence band observed around 2.0 eV in as-implanted specimens disappears on annealing to 500[sup o]C and then a band around 1.7 eV appears on annealing to 1100[sup o]C. We discuss the origin of the luminescence bands in terms of the defects in SiO[sub 2] and the Si nanocrystals grown in SiO[sub 2]. (author).

  20. DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Based on theoretical analysis and computer-aided simulation, optimized design prin-ciples for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials, determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage.In the light of these principles, a SiGe PMOSFET is designed and fabricated successfully.Measurement indicates that the SiGe PMOSFET's(L=2μ同洒45 mS/mm(300K) and 92 mS/mm(77K) ,while that is 33mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.

  1. DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

    Institute of Scientific and Technical Information of China (English)

    Yang Peifeng; Zhang Jing; Yi Qiang; Fan Zerui; Li Jingchun; Yu Qi; Wang Xiangzhan; Yang Mohua; He Lin; Li Kaicheng; Tan Kaizhou; Liu Daoguang

    2002-01-01

    Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles,a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2μm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.

  2. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  3. An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure.

    Science.gov (United States)

    Sun, Edward; Su, Fu-Hsiang; Shih, Ying-Tsang; Tsai, Hung-Ling; Chen, Ching-Huang; Wu, Mong-Kai; Yang, Jer-Ren; Chen, Miin-Jang

    2009-11-04

    Si nanocrystals embedded in a SiO2 matrix and an n-type Al-doped ZnO (ZnO:Al) layer were applied to improve the external quantum efficiency from Si in n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterojunction light-emitting diodes (LEDs). The Si nanocrystals were grown by low pressure chemical vapor deposition and the ZnO:Al layer was prepared by atomic layer deposition. The n-type ZnO:Al layer acts as an electron injection layer, a transparent conductive window, and an anti-reflection coating to increase the light extraction efficiency. Owing to the spatial confinement of carriers and surface passivation by the surrounding SiO2, the Si nanocrystals embedded in the SiO2 matrix lead to a significant enhancement of the light emission efficiency from Si. An external quantum efficiency up to 4.3 x 10(-4) at the wavelength corresponding to the indirect bandgap of Si was achieved at room temperature.

  4. Primary fibromyalgia

    DEFF Research Database (Denmark)

    Jacobsen, Søren; Jensen, L T; Foldager, Marie Viftrup

    1990-01-01

    type III aminoterminal peptide. Subjective symptoms, tender points and dynamic muscle strength in 45 women with primary fibromyalgia were related to serum concentrations of procollagen type III aminoterminal peptide. Patients with low serum concentrations of procollagen type III aminoterminal peptide...... had more symptoms, a higher frequency of tender points and lesser quality of sleep compared to patients with normal serum concentrations of procollagen type III aminoterminal peptide (P less than 0.05). They also had a lower dynamic muscle strength (P less than 0.0005). We conclude that the serum...

  5. Therapeutic Silencing of KRAS using Systemically Delivered siRNAs

    Science.gov (United States)

    Pecot, Chad V.; Wu, Sherry Y.; Bellister, Seth; Filant, Justyna; Rupaimoole, Rajesha; Hisamatsu, Takeshi; Bhattacharya, Rajat; Maharaj, Anshumaan; Azam, Salma; Rodriguez-Aguayo, Cristian; Nagaraja, Archana S.; Morelli, Maria Pia; Gharpure, Kshipra M.; Waugh, Trent A.; Gonzalez-Villasana, Vianey; Zand, Behrouz; Dalton, Heather J.; Kopetz, Scott; Lopez-Berestein, Gabriel; Ellis, Lee M.; Sood, Anil K.

    2015-01-01

    Despite being amongst the most common oncogenes in human cancer, to date there are no effective clinical options for inhibiting KRAS activity. We investigated whether systemically delivered KRAS siRNAs have therapeutic potential in KRAS mutated cancer models. We identified KRAS siRNA sequences with notable potency in knocking-down KRAS expression. Using lung and colon adenocarcinoma cell lines, we assessed anti-proliferative effects of KRAS silencing in vitro. For in vivo experiments, we used a nano-liposomal delivery platform, DOPC, for systemic delivery of siRNAs. Various lung and colon cancer models were utilized to determine efficacy of systemic KRAS siRNA based on tumor growth, development of metastasis and down-stream signaling. KRAS siRNA sequences induced >90% knock-down of KRAS expression, significantly reducing viability in mutant cell lines. In the lung cancer model, KRAS siRNA treatment demonstrated significant reductions in primary tumor growth and distant metastatic disease, while the addition of CDDP was not additive. Significant reductions in Ki-67 indices were seen in all treatment groups, while significant increases in caspase-3 activity was only seen in the CDDP treatment groups. In the colon cancer model, KRAS siRNA reduced tumor KRAS and pERK expression. KRAS siRNAs significantly reduced HCP1 subcutaneous tumor growth, as well as outgrowth of liver metastases. Our studies demonstrate a proof-of-concept approach to therapeutic KRAS targeting using nanoparticle delivery of siRNA. This study highlights the potential translational impact of therapeutic RNA interference, which may have broad applications in oncology, especially for traditional “undruggable” targets. PMID:25281617

  6. Measurement of optical constants of Si and SiO2 from reflection electron energy loss spectra using factor analysis method

    Science.gov (United States)

    Jin, H.; Shinotsuka, H.; Yoshikawa, H.; Iwai, H.; Tanuma, S.; Tougaard, S.

    2010-04-01

    The energy loss functions (ELFs) and optical constants of Si and SiO2 were obtained from quantitative analysis of reflection electron energy loss spectroscopy (REELS) by a new approach. In order to obtain the ELF, which is directly related to the optical constants, we measured series of angular and energy dependent REELS spectra for Si and SiO2. The λ(E )K(ΔE) spectra, which are the product of the inelastic mean free path (IMFP) and the differential inverse IMFP, were obtained from the measured REELS spectra. We used the factor analysis (FA) method to analyze series of λ(E )K(ΔE) spectra for various emission angles at fixed primary beam energy to separate the surface-loss and bulk-loss components. The extracted bulk-loss components enable to obtain the ELFs of Si and SiO2, which are checked by oscillator strength-sum and perfect-screening-sum rules. The real part of the reciprocal of the complex dielectric function was determined by Kramers-Kronig analysis of the ELFs. Subsequently, the optical constants of Si and SiO2 were calculated. The resulting optical constants in terms of the refractive index and the extinction coefficient for Si and SiO2 are in good agreement with Palik's reference data. The results demonstrate the general applicability of FA as an efficient method to obtain the bulk ELF and to determine the optical properties from REELS measurements.

  7. EET research on the Al-22%Si alloy under the action of electric pulses

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Based on the empirical electron theory of solids and molecules (EET), the phase valence electron structure parameters of Al-22%Si alloy are calculated, and the sensitivity of the bond network of Al-Si alloy melt to temperature (energy) and the effect of the sensitivity on the morphology are studied. The results show that the Si-Si clusters with larger nA in the slightly superheated Al-Si alloy melt supply the nucleation core to the primary silicon phase in the hypereutectic Al-22%Si alloy, and strongly generate the drag-like effect for the Al-Si clusters around them; that the variation of temperature significantly affects the stability of bonds of the core so that the solidified structure is changed; that the electric pulse applied to the alloy melt can irrecoverably alter the stability of Si-Si clusters, then the modifica- tion of the solidified structure morphology of alloys is generated; that the higher the energy of the electric pulse, the less stable the Si-Si clusters, and the more significant the electric pulse modification.

  8. Miscibility of NiSi{sub 2}, FeSi{sub 2} and Cu{sub 3}Si

    Energy Technology Data Exchange (ETDEWEB)

    Langkau, Sabine [IMKM, Universitaet Leipzig, Scharnhorststr. 20, 04275 Leipzig (Germany)], E-mail: Langkau@rz.uni-leipzig.de; Heuer, Matthias [BerlinSolar GmbH, Magnusstrasse 11, 12489 Berlin (Germany); Hoebler, Hans-Joachim; Bente, Klaus; Kloess, Gert [IMKM, Universitaet Leipzig, Scharnhorststr. 20, 04275 Leipzig (Germany)

    2009-04-17

    Ternary and quaternary chemical composition ranges of the phases NiSi{sub 2}, FeSi{sub 2}, Cu{sub 3}Si, NiSi and FeSi were determined using electron-microprobe-measurements. The system NiSi{sub 2}-Cu{sub 3}Si was found to be eutectic and most probably quasi-binary. Furthermore lattice constants of NiSi{sub 2} and Ni{sub 0.62}Fe{sub 0.41}Si{sub 1.98} were determined by means of X-ray diffraction (XRD)

  9. In-situ Al/24Si Functional Graded Materials Prepared by Electromagnetic Separation

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Cylinder-like in-situ Al/24Si FGMs were produced by using electromagnetic separating process. Si primary phasereinforced layer with volume fraction as high as 16 pct was formed at the outer region of the cylinder-like sampleswhere the local hardness and wear resistance were enhanced remarkably. Moreover, both of strength and ductility inthe inner region provided insurance of reliable strength for this as-cast gradient material. It indicated that generalmechanical properties such as good wear resistance at the outer region and good ductility in the central part couldbe obtained with the optimized redistribution of the Si primary particles under the electromagnetic force.

  10. Primary hyperparathyroidism.

    Science.gov (United States)

    Muñoz-Torres, Manuel; García-Martín, Antonia

    2017-10-06

    Primary hyperparathyroidism (PHPT) is a common endocrinological process, characterized by chronic elevation of serum concentrations of calcium and parathyroid hormone (PTH). Many years ago, the most frequent forms of clinical presentation were symptomatic renal or skeletal disease with moderate or severe hypercalcemia; however, currently, most patients have few symptoms and mild hypercalcemia. A new form of presentation called normocalcemic PHPT has also been described but clinical consequences are not well established. The biochemical profile of PHPT is characterized by hypercalcemia and high or inappropriately normal PTH concentrations. Parathyroidectomy is the only definitive cure. Medical treatment with the calcimimetic cinacalcet has been shown to normalize calcemia in a high percentage of cases. Copyright © 2017 Elsevier España, S.L.U. All rights reserved.

  11. Primary Hyperoxaluria

    Directory of Open Access Journals (Sweden)

    Jérôme Harambat

    2011-01-01

    Full Text Available Primary hyperoxalurias (PH are inborn errors in the metabolism of glyoxylate and oxalate. PH type 1, the most common form, is an autosomal recessive disorder caused by a deficiency of the liver-specific enzyme alanine, glyoxylate aminotransferase (AGT resulting in overproduction and excessive urinary excretion of oxalate. Recurrent urolithiasis and nephrocalcinosis are the hallmarks of the disease. As glomerular filtration rate decreases due to progressive renal damage, oxalate accumulates leading to systemic oxalosis. Diagnosis is often delayed and is based on clinical and sonographic findings, urinary oxalate assessment, DNA analysis, and, if necessary, direct AGT activity measurement in liver biopsy tissue. Early initiation of conservative treatment, including high fluid intake, inhibitors of calcium oxalate crystallization, and pyridoxine in responsive cases, can help to maintain renal function in compliant subjects. In end-stage renal disease patients, the best outcomes have been achieved with combined liver-kidney transplantation which corrects the enzyme defect.

  12. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  13. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1995-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method has the potential to facilitate the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent efforts have focused on transferring the joining technology to industry. Several industrial partners have been identified and collaborative research projects are in progress. Investigations are focusing on applying the joining method to sintered a-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  14. Methods of radiation effects evaluation of SiC/SiC composite and SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. Several methods for radiation effects evaluation of SiC fibers and fiber-reinforced SiC/SiC composite are presented.

  15. Al versus Si competition in FeSiAl alloys

    Energy Technology Data Exchange (ETDEWEB)

    Legarra, E. [Dpto. Electricidad y Electronica, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco (UPV/EHU), CP 644, 48080 Bilbao (Spain)], E-mail: estibaliz.legarra@ehu.es; Apinaniz, E. [Dpto. Fisica Aplicada I, Escuela de Ingenieria Tecnica Superior, Universidad del Pais Vasco, Alameda de Urquijo s/n 48013 Bilbao (Spain); Plazaola, F. [Dpto. Electricidad y Electronica, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco (UPV/EHU), CP 644, 48080 Bilbao (Spain); Jimenez, J.A. [Centro Nacional de Investigaciones Metalurgicas (CENIM), Avda. Gregorio del amo 8, 28040 Madrid (Spain); Pierna, A.R. [Chemical Engineering and Environmental Department, UPV/EHU, Box 1379, 20008 San Sebastian (Spain)

    2008-10-15

    In FeSiAl alloys, when Si substitutes for Al, important changes take place in the magnetism as well as in the structural properties. Alloys in the two composition series Fe{sub 75}Al{sub 25-x}Si{sub x} (x=0, 7.5, 12.5, 17.5, 25) and Fe{sub 70}Al{sub 30-x}Si{sub x} (x=0, 9, 15, 21, 30) were prepared by induction melting; afterwards they were crushed and then annealed in order to recover the DO{sub 3} stable phase. The deformed FeAl samples show larger lattice parameters than the ordered ones; however, this difference ({delta}a) decreases when Si substitutes for Al until it becomes zero (i.e. until the ordered samples and the deformed ones have the same lattice parameters). This trend is the same for both sample series and does not depend on the Fe content of the alloy. However, the magnetization has a different behaviour depending on the Fe content. For deformed Fe{sub 75}Al{sub 25-x}Si{sub x} alloys the saturation magnetization decreases with increasing Si content while for Fe{sub 70}Al{sub 30-x}Si{sub x} deformed alloys the saturation magnetization has a plateau in which the saturation magnetization values do not vary.

  16. SI and Non-SI Units of Concentration: A Truce?

    Science.gov (United States)

    Rich, Ronald L.

    1986-01-01

    Questions the current usage of the International System of Units (called SI units) in representing chemical notation and terminology. Suggests several additions to the system that relate to concentrations. Outlines new symbols for distinguishing between "concentration" and "molality." Includes tables to illustrate the proposed SI units. (TW)

  17. Modification effect of Yb and Na3PO4 on microstructure of Mg2Si/Mg-4Si alloy and mechanism

    Directory of Open Access Journals (Sweden)

    Xiao-lin Wei

    2015-11-01

    Full Text Available The modification effects of ytterbium (Yb, Na3PO4 and Yb + Na3PO4 on primary Mg2Si phase in Mg-4Si alloys were investigated by means of X-ray diffraction (XRD, optical microscopy (OM, scanning electron microscopy (SEM and energy dispersive spectroscopy (EDS analysis in this work. The results indicate that the morphology of the primary Mg2Si phase apparently changes from coarse dendrites to fine dispersive polygonal particles and the mean size decreases from 276.6 μm to 7.1 μm, with combined modification of 0.8wt.% Yb and 2.64wt.% Na3PO4. Such a morphological evolution results in improvement in the ultimate tensile strength and elongation of the alloys as compared to the base alloy. This may be attributed to the formation of the YbP particles that acted as the heterogeneous nucleation substrates for the primary Mg2Si particles, resulting in a refined distribution of these precipitates. The results of XRD examination show that there was no reaction between Si and Yb or Na3PO4. Solo addition of Yb or Na3PO4 into the melt has no real modification effect on the microstructure, but the primary Mg2Si particles and α-Mg phases become coarser than that in the unmodified alloy.

  18. AN IN SITU SURFACE COMPOSITE AND GRADIENT MATERIALOF Al-Si ALLOY PRODUCED BY ELECTROMAGNETIC FORCE

    Institute of Scientific and Technical Information of China (English)

    Z.M. Xu; T.X. Li; Z.L. Zhu; Y.H. Zhou

    2001-01-01

    Because of the different conductivities between the primary phase (law electric conductivity) and the metal melt, electromagnetic force scarcely acts on the primary phase.Thus, an electromagnetic repulsive force applied by the metal melt exerts on the primary phase when the movement of the melt in the direction of electromagnetic force is limited. As a result, the repulsive force exerts on the primary phase to push them to move in the direction opposite to that of the electromagnetic force when the metal melt with primary phase solidifies under an electromagnetic force field. Based on this,a new method for production of in situ surface composite and gradient material by electromagnetic force is proposed. An in situ primary Si reinforced surface composite of Al-15wt%Si alloy and gradient material of Al-19wt%Si alloy were produced by this method. The microhardness of the primary Si is HV1320. The reinforced phase size is in the range from 40μm to 100μm. The wear resistance of Al-Si alloy gradient material can be more greatly increased than that of their matrix material.``

  19. Preparation of Al/Si functionally graded materials using ultrasonic separation method

    Directory of Open Access Journals (Sweden)

    Zhang Zhongtao

    2008-08-01

    Full Text Available Functionally graded materials (FGM have been widely used in many industries such as aerospace, energy and electronics. In this experimental study of fabricating FGM, an approach was developed to prepare Al/Si FGM using power ultrasonic separation method. Material sample with continuously changing composition and performance/properties was successfully produced. Results showed that the microstructure of the FGM sample transited, from its top to bottom, from the hypereutectic structure with a large quantity of primary Si gradually to the eutectic, and fi nally to the hypoeutectic with numerous primary Al dendrites. The distribution of primary Si and microhardness of the FGM sample also presented graded characteristics, resulting that the wear resistance of the FGM sample decreased from top to bottom. Preliminary discussion was made on the mechanism of the formation of Al/Si FGM.

  20. Preparation of Al/Si functionally graded materials using ultrasonic separation method

    Institute of Scientific and Technical Information of China (English)

    Zhang Zhongtao; LI Tingju; Yue Hongyun; Zhang Jian; Li Jie

    2008-01-01

    Functionally graded materials (FGM) have been widely used in many industries such as aerospace, energy and electronics. In this experimental study of fabricating FGM, an approach was developed to prepare Al/Si FGM using power ultrasonic separation method. Material sample with continuously changing composition and performance/properties was successfully produced. Results showed that the microstructure of the FGM sample transited, from its top to bottom, from the hypereutectic structure with a large quantity of primary Si gradually to the eutectic, and finally to the hypoeutectic with numerous primary AI dendrites. The distribution of primary Si and microhardness of the FGM sample also presented graded characteristics, resulting that the wear resistance of the FGM sample decreased from top to bottom. Preliminary discussion was made on the mechanism of the formation of Al/Si FGM.

  1. SOLIDIFICATION MICROSTRUCTURE AND FRACTURE MORPHOLOGY OF SiCp/ZA27 COMPOSITE

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Solidification microstructure and mechanical property are explored.Furthermore,tensile fracture and microstructure are analyzed by using SEM and JXA-840A electron-probe.The results indicate that SiC particles in SiCp/ZA27 composite are mainly distributed on interfaces or between dendrites and surrounded by primary α phase.The dendrite of α phase is fined by SiCp.The tensile strength at room temperature decreases with the increasing of SiCp addition.The tensile strength at elevated temperature increases with the addition of SiCp.The fracture of SiCp/ZA27 composites is the mixture of tough and brittle fracture.The carck is prone to extend along the interface and the region of dispersed shrinkage.

  2. Feasibility study of a SiC sandwich neutron spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian, E-mail: caepwujian@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Lei, Jiarong, E-mail: jiarong_lei@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Jiang, Yong; Chen, Yu; Rong, Ru; Zou, Dehui; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Chen, Gang; Li, Li; Bai, Song [Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2013-04-21

    Semiconductor sandwich neutron spectrometers are suitable for in-pile measurements of fast reactor spectra thanks to their compact and relatively simple design. We have assembled and tested a sandwich neutron spectrometer based on 4H-silicon carbide (4H-SiC) Schottky diodes. The SiC diodes detect neutrons via neutron-induced charged particles (tritons and alpha particles) produced by {sup 6}Li(n,α){sup 3}H reaction. {sup 6}LiF neutron converter layers are deposited on the front surface of Schottky diodes by magnetron sputtering. The responses of SiC diodes to charged particles were investigated with an {sup 241}Am alpha source. A sandwich neutron spectrometer was assembled with two SiC Schottky diodes selected based on the charged-particle-response experimental results. The low-energy neutron response of the sandwich spectrometer was measured in the neutron field of the Chinese Fast Burst Reactor-II (CFBR-II). Spectra of alpha particles and tritons from {sup 6}Li(n,α){sup 3}H reaction were obtained with two well-resolved peaks. The energy resolution of the sum spectrum was 8.8%. The primary experimental results confirmed the 4H-SiC sandwich neutron spectrometer's feasibility. -- Highlights: ► Sandwich neutron spectrometer employing 4H-SiC as a detecting material has been developed for the first time. ► {sup 6}LiF neutron converter has been deposited on the surface of 4H-SiC Schottky diode. ► Preliminary testing results obtained with the 4H-SiC sandwich neutron spectrometer are presented.

  3. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  4. Primary immunodeficiency

    Directory of Open Access Journals (Sweden)

    McCusker Christine

    2011-11-01

    Full Text Available Abstract Primary immunodeficiency disorder (PID refers to a heterogeneous group of over 130 disorders that result from defects in immune system development and/or function. PIDs are broadly classified as disorders of adaptive immunity (i.e., T-cell, B-cell or combined immunodeficiencies or of innate immunity (e.g., phagocyte and complement disorders. Although the clinical manifestations of PIDs are highly variable, most disorders involve at least an increased susceptibility to infection. Early diagnosis and treatment are imperative for preventing significant disease-associated morbidity and, therefore, consultation with a clinical immunologist is essential. PIDs should be suspected in patients with: recurrent sinus or ear infections or pneumonias within a 1 year period; failure to thrive; poor response to prolonged use of antibiotics; persistent thrush or skin abscesses; or a family history of PID. Patients with multiple autoimmune diseases should also be evaluated. Diagnostic testing often involves lymphocyte proliferation assays, flow cytometry, measurement of serum immunoglobulin (Ig levels, assessment of serum specific antibody titers in response to vaccine antigens, neutrophil function assays, stimulation assays for cytokine responses, and complement studies. The treatment of PIDs is complex and generally requires both supportive and definitive strategies. Ig replacement therapy is the mainstay of therapy for B-cell disorders, and is also an important supportive treatment for many patients with combined immunodeficiency disorders. The heterogeneous group of disorders involving the T-cell arm of the adaptive system, such as severe combined immunodeficiency (SCID, require immune reconstitution as soon as possible. The treatment of innate immunodeficiency disorders varies depending on the type of defect, but may involve antifungal and antibiotic prophylaxis, cytokine replacement, vaccinations and bone marrow transplantation. This article

  5. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  6. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

    Science.gov (United States)

    Moustafa Bouzaki, Mohammed; Aillerie, Michel; Ould Saad Hamady, Sidi; Chadel, Meriem; Benyoucef, Boumediene

    2016-10-01

    We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μm which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

  7. First-principles study on Al4Sr as the heterogeneous nucleus of Mg2Si

    Science.gov (United States)

    Xia, Zhi; Li, Ke

    2016-12-01

    The interfacial structure, electronic structure, work of adhesion and interfacial energy of the Al4Sr(100)/Mg2Si(100) interface have been studied with first-principles calculations to clarify the heterogeneous nucleation potential of the Al4Sr particle for a primary Mg2Si phase. Eight models of the Al4Sr(100)/Mg2Si(100) interface with OT and HCP stacking were adopted for the interfacial model geometries. The results show that the Al-Mg terminations of HCP and Al-Si terminations of OT stacking, with lower interfacial spacing and higher interfacial adhesion, are the most favorable structures after relaxation. Al-Mg- and Al-Si-terminated interfaces, with a lower interfacial distance, form chemical bonds more easily. Metallic bonds are formed near the Al-Mg-terminated interface, while the Al-Si-terminated interface exhibits predominantly covalent bond characteristics. Moreover, the calculated interfacial energies of both terminations are negative in conditions involving excess Mg atoms. The interfacial energies of Al-Si are lower than those of Al-Mg termination, indicating that the Al-Si-terminated interface is more stable. From thermodynamic analysis, we discover that the Al4Sr particle can be an effective heterogeneous nucleation substrate for Mg2Si in a Mg-Al-Si alloy melt.

  8. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  9. 稀土和磷对过共晶Al-Si合金的复合变质作用%Multiplex modification with rare earth elements and P for hypereutectic Al-Si alloys

    Institute of Scientific and Technical Information of China (English)

    欧阳志英; 毛协民; 红梅

    2007-01-01

    The effect of rare earth (RE) elements on the morphologies and sizes of Si phases in the hypereutectic Al-Si alloys modified with P was investigated. The results show that the addition of La element to the hypereutectic Al-Si alloys can enhance the effect of P element on the modification of the primary Si phases. In the multiplex modification of RE-P, the primary Si phase is refiner and the shape of the eutectic Si is changed from long needle-like to short rod-like. Moreover, the agglomeration rate of the primary Si phase is slowed greatly. Even the melt is held for 6 h, the average size of the primary Si phase is still satisfied. The results analyzed by scanning electron microscope (SEM) indicate that La is richer at Al-Si interface than that in α-Al or primary Si phase. The higher the La content in the Al-Si interface, the smaller the primary Si phase.

  10. Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Younghyun, E-mail: yhkim@mosfet.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takenaka, Mitsuru [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Osada, Takenori; Hata, Masahiko [Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-04-30

    We have characterized photonic-wire waveguides with Si/SiGe/Si heterostructure ribs for Si-based optical modulators. The Si (80 nm)/Si{sub 0.72}Ge{sub 0.28} (40 nm) layers grown on Si-on-insulator by molecular beam epitaxy for optical modulators were evaluated by in-situ reflection high-energy electron diffraction, atomic force microscope, X-ray diffraction and Raman spectroscopy, exhibiting that the fully-strained highly-crystalline SiGe layer was obtained. We have evaluated the propagation loss of the Si/strained SiGe/Si photonic-wire waveguides. The wavelength dependence of the propagation loss exhibits the bandgap narrowing of the strained Si{sub 0.72}Ge{sub 0.28}, while the optical absorption of the strained Si{sub 0.72}Ge{sub 0.28} is not significant for the optical modulator application at 1.55-μm wavelength. - Highlights: • We have characterized photonic-wire waveguides with Si/SiGe/Si heterostructure ribs. • The Si/Si{sub 0.72}Ge{sub 0.28} grown on Si-on-insulator were evaluated to be fully strained. • We have fabricated and evaluated the Si/strained SiGe/Si photonic-wire waveguides. • The wavelength dependence exhibits bandgap narrowing of the strained Si{sub 0.72}Ge{sub 0.28}. • Optical absorption of the SiGe is not significant for optical modulators at 1.55 μm.

  11. [Primary lipodystrophies].

    Science.gov (United States)

    Capeau, J; Magré, J; Lascols, O; Caron, M; Béréziat, V; Vigouroux, C

    2007-02-01

    Primary lipodystrophies represent a heterogeneous group of very rare diseases with a prevalence of less than 1 case for 100.000, inherited or acquired, caracterized by a loss of body fat either generalized or localized (lipoatrophy). In some forms, lipoatrophy is associated with a selective hypertrophy of other fat depots. Clinical signs of insulin resistance are often present: acanthosis nigricans, signs of hyperandrogenism. All lipodystrophies are associated with dysmetabolic alterations with insulin resistance, altered glucose tolerance or diabetes and hypertriglyceridemia leading to a risk of acute pancreatitis. Chronic complications are those resulting from diabetes involving the retina, kidney and nerves, cardiovascular complications and steatotic liver lesions that could result in cirrhosis. Genetic forms of generalized lipodystrophy (or Berardinelli-Seip syndrome) result, in most cases, from recessive mutations in one of two genes: either BSCL2 coding seipin or BSCL1 coding AGPAT2, an acyl-transferase involved in triglyceride synthesis. Acquired generalized lipodystrophy (Lawrence syndrome) is of unknown origin but is sometimes associated with signs of autoimmunity. Partial lipodystrophies can be familial with dominant transmission. Heterozygous mutations have been identified in the LMNA gene encoding nuclear lamin A/C belonging to the nuclear lamina, or in PPARG encoding the adipogenic transcription factor PPARgamma. Some less typical lipodystrophies, associated with signs of premature aging, have been linked to mutations in LMNA or in the ZMPSTE24 gene encoding the protease responsible for the maturation of prelamin A into lamin A. Acquired partial lipodystrophy (Barraquer-Simons syndrome) is characterized by cephalothoracic fat loss. Its aetiology is unknown but mutations in LMNB2, encoding the lamina protein lamin B2, could represent susceptibility factors. Highly active antiretroviral treatments for HIV infection are currently the most frequent cause

  12. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  13. Cryogenic Characterization of FBK RGB-HD SiPMs

    Science.gov (United States)

    Aalseth, C. E.; Acerbi, F.; Agnes, P.; Albuquerque, I. F. M.; Alexander, T.; Alici, A.; Alton, A. K.; Ampudia, P.; Antonioli, P.; Arcelli, S.; Ardito, R.; Arnquist, I. J.; Asner, D. M.; Back, H. O.; Batignani, G.; Bertoldo, E.; Bettarini, S.; Bisogni, M. G.; Bocci, V.; Bondar, A.; Bonfini, G.; Bonivento, W.; Bossa, M.; Bottino, B.; Bunker, R.; Bussino, S.; Buzulutskov, A.; Cadeddu, M.; Cadoni, M.; Caminata, A.; Canci, N.; Candela, A.; Cantini, C.; Caravati, M.; Cariello, M.; Carlini, M.; Carpinelli, M.; Castellani, A.; Catalanotti, S.; Cataudella, V.; Cavalcante, P.; Cereseto, R.; Chen, Y.; Chepurnov, A.; Chiavassa, A.; Cicalò, C.; Cifarelli, L.; Citterio, M.; Cocco, A. G.; Colocci, M.; Corgiolu, S.; Covone, G.; Crivelli, P.; D'Antone, I.; D'Incecco, M.; Da Rocha Rolo, M. D.; Daniel, M.; Davini, S.; De Candia, A.; De Cecco, S.; De Deo, M.; De Filippis, G.; De Guido, G.; De Rosa, G.; Dellacasa, G.; Demontis, P.; Derbin, A. V.; Devoto, A.; Di Eusanio, F.; Di Pietro, G.; Dionisi, C.; Dolgov, A.; Dormia, I.; Dussoni, S.; Empl, A.; Ferri, A.; Filip, C.; Fiorillo, G.; Fomenko, K.; Franco, D.; Froudakis, G. E.; Gabriele, F.; Gabrieli, A.; Galbiati, C.; Garcia Abia, P.; Gendotti, A.; Ghisi, A.; Giagu, S.; Gibertoni, G.; Giganti, C.; Giorgi, M.; Giovanetti, G. K.; Gligan, M. L.; Gola, A.; Gorchakov, O.; Goretti, A. M.; Granato, F.; Grassi, M.; Grate, J. W.; Grigoriev, G. Y.; Gromov, M.; Guan, M.; Guerra, M. B. B.; Guerzoni, M.; Gulino, M.; Haaland, R. K.; Harrop, B.; Hoppe, E. W.; Horikawa, S.; Hosseini, B.; Hughes, D.; Humble, P.; Hungerford, E. V.; Ianni, An.; Jimenez Cabre, S.; Johnson, T. N.; Keeter, K.; Kendziora, C. L.; Kim, S.; Koh, G.; Korablev, D.; Korga, G.; Kubankin, A.; Kugathasan, R.; Kuss, M.; Li, X.; Lissia, M.; Lodi, G. U.; Loer, B.; Longo, G.; Lussana, R.; Luzzi, L.; Ma, Y.; Machado, A. A.; Machulin, I. N.; Mais, L.; Mandarano, A.; Mapelli, L.; Marcante, M.; Margotti, A.; Mari, S. M.; Mariani, M.; Maricic, J.; Marinelli, M.; Marras, D.; Martoff, C. J.; Mascia, M.; Messina, A.; Meyers, P. D.; Milincic, R.; Moggi, A.; Moioli, S.; Monasterio, S.; Monroe, J.; Monte, A.; Morrocchi, M.; Mu, W.; Muratova, V. N.; Murphy, S.; Musico, P.; Nania, R.; Napolitano, J.; Navrer Agasson, A.; Nikulin, I.; Nosov, V.; Nozdrina, A. O.; Nurakhov, N. N.; Oleinik, A.; Oleynikov, V.; Orsini, M.; Ortica, F.; Pagani, L.; Pallavicini, M.; Palmas, S.; Pandola, L.; Pantic, E.; Paoloni, E.; Paternoster, G.; Pavletcov, V.; Pazzona, F.; Pelczar, K.; Pellegrini, L. A.; Pelliccia, N.; Perotti, F.; Perruzza, R.; Piemonte, C.; Pilo, F.; Pocar, A.; Portaluppi, D.; Poudel, S. S.; Pugachev, D. A.; Qian, H.; Radics, B.; Raffaelli, F.; Ragusa, F.; Randle, K.; Razeti, M.; Razeto, A.; Regazzoni, V.; Regenfus, C.; Reinhold, B.; Renshaw, A. L.; Rescigno, M.; Riffard, Q.; Rivetti, A.; Romani, A.; Romero, L.; Rossi, B.; Rossi, N.; Rubbia, A.; Sablone, D.; Salatino, P.; Samoylov, O.; Sands, W.; Sant, M.; Santorelli, R.; Savarese, C.; Scapparone, E.; Schlitzer, B.; Scioli, G.; Sechi, E.; Segreto, E.; Seifert, A.; Semenov, D. A.; Serci, S.; Shchagin, A.; Shekhtman, L.; Shemyakina, E.; Sheshukov, A.; Simeone, M.; Singh, P. N.; Skorokhvatov, M. D.; Smirnov, O.; Sobrero, G.; Sokolov, A.; Sotnikov, A.; Stanford, C.; Suffritti, G. B.; Suvorov, Y.; Tartaglia, R.; Testera, G.; Tonazzo, A.; Tosi, A.; Trinchese, P.; Unzhakov, E. V.; Vacca, A.; Verducci, M.; Viant, T.; Villa, F.; Vishneva, A.; Vogelaar, B.; Wada, M.; Wahl, J.; Walker, S.; Wang, H.; Wang, Y.; Watson, A. W.; Westerdale, S.; Wilhelmi, J.; Williams, R.; Wojcik, M. M.; Wu, S.; Xiang, X.; Xiao, X.; Yang, C.; Ye, Z.; Zappa, F.; Zappalà, G.; Zhu, C.; Zichichi, A.; Zuzel, G.

    2017-09-01

    We report on the cryogenic characterization of Red Green Blue - High Density (RGB-HD) SiPMs developed at Fondazione Bruno Kessler (FBK) as part of the DarkSide program of dark matter searches with liquid argon time projection chambers. A cryogenic setup was used to operate the SiPMs at varying temperatures and a custom data acquisition system and analysis software were used to precisely characterize the primary dark noise, the correlated noise, and the gain of the devices. We demonstrate that FBK RGB-HD SiPMs with low quenching resistance (RGB-HD-LRq) can be operated from 40 K to 300 K with gains in the range 105 to 106 and noise rates at a level of around 1 Hz/mm2.

  14. Cryogenic Characterization of FBK RGB-HD SiPMs

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, C.E.; et al.

    2017-05-19

    We report on the cryogenic characterization of Red Green Blue - High Density (RGB-HD) SiPMs developed at Fondazione Bruno Kessler (FBK) as part of the DarkSide program of dark matter searches with liquid argon time projection chambers. A dedicated setup was used to measure the primary dark noise, the correlated noise, and the gain of the SiPMs at varying temperatures. A custom-made data acquisition system and analysis software were used to precisely characterize these parameters. We demonstrate that FBK RGB-HD SiPMs with low quenching resistance (RGB-HD-LR$_q$) can be operated from 40 K to 300 K with gains in the range $10^5$ to $10^6$ and noise rates on the order of a few Hz/mm$^2$.

  15. Si Isotopes of Brownleeite

    Science.gov (United States)

    Nakamura-Messenger, K.; Messenger, Scott R.; Ito, M.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Tatsuoka, H.; Zolensky, M. E.; Tatsuoka, H.

    2010-01-01

    Brownleeite is a manganese silicide, ideally stoichiometric MnSi, not previously observed in nature until its discovery within an interplanetary dust particle (IDP) that likely originated from a comet [1]. Three discrete brownleeite grains in the IDP L2055 I3 (4 microns in size, hereafter IDP I3) were identified with maximum dimensions of 100, 250 and 600 nm and fully analyzed using scanning-transmission electron microscopy (STEM) [1]. One of the grains (100 nm in size) was poikilitically enclosed by low-Fe, Mn-enriched (LIME) olivine. LIME olivine is epitaxial to the brownleeite with the brownleeite (200) parallel to the olivine c* [1]. LIME olivine is an enigmatic phase first reported from chondritic porous IDPs and some unequilibrated ordinary chondrites [ 2], that is commonly observed in chondritic-porous IDPs. Recently, LIME olivine has been also found in comet Wild-2 (Stardust) samples [3], indicating that LIME olivine is a common mineral component of comets. LIME olivine has been proposed to form as a high temperature condensate in the protosolar nebula [2]. Brownleeite grains also likely formed as high-temperature condensates either in the early Solar System or in the outflow of an evolved star or supernova explosion [1]. The isotopic composition of the brownleeite grains may strongly constrain their ultimate source. To test this hypothesis, we performed isotopic analyses of the brownleeite and the associated LIME olivine, using the NASA/JSC NanoSIMS 50L ion microprobe.

  16. Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers

    Energy Technology Data Exchange (ETDEWEB)

    Vdovin, V.I.; Reznik, V.Ya. [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Torack, T.A.; Fei, Lu [MEMC Inc, St Peters, MO (United States); Mil' vidskii, M.G. [Institute of Rare Metals ' Giredmet' , Moscow (Russian Federation); Falster, R. [MEMC Electronic Materials SpA, Novara (Italy)

    2007-07-01

    The generation of misfit dislocations (MDs) and stacking faults (SFs) was studied by TEM and preferential chemical etching in multilayer Si(001)/SiGe/SiGeC(10 nm)/SiGe/Si heterostructures grown by CVD at 650 C. Prior to growth of Si layer, the other part of heterostructure was annealed at 950 C in the growth chamber to get relaxed buffer layers and strained Si layer free of extended defects. We used SiGe alloys with Ge content of 24 at.% and C content of 0.5 at.%. Carbon in the strained SiGe matrix was found to promote high rates of strain relaxation through the nucleation of perfect dislocation loops close to the interface with Si substrate. For Si layer thickness >10 nm, threading dislocations split in these layers under tensile strain to form SFs. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer

    Institute of Scientific and Technical Information of China (English)

    Liu Xiang; Liu Hui

    2011-01-01

    We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor (OTFT) with the purpose of improving the performance of the SiO2 gate insulator.The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.

  18. Study of New Way about Si/Si Bonding

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized.

  19. Effect of mixed rare earth oxides and CaCO3 modification on the microstructure of an in-situ Mg2Si/Al-Si composite

    Institute of Scientific and Technical Information of China (English)

    LIU Zheng; LIN Jixing; JING Qingxiu

    2009-01-01

    The effects of mixed rare earth oxides and CaCO3 on the microstructure of an in-situ Mg2Si/Al-Si hypereutectic alloy composite were investigated by optical microscope, scanning electron microscope, and energy dispersive spectrum analysis. The results showed that the morphology of the primary Mg2Si phase particles changed from irregular or crosses to polygonal shape, their sizes decreased from 75 μm to about 25 μm, and the compound of both the oxide and CaCO3 was better than either the single mixed rare earth oxides or CaCO3.

  20. Formation of microtubes from strained SiGe/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Qin, H [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Shaji, N [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Merrill, N E [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Kim, H S [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Toonen, R C [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Blick, R H [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Roberts, M M [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Savage, D E [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Lagally, M G [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Celler, G [SOITEC USA Inc., 2 Centennial Drive, Peabody, MA 01960 (United States)

    2005-11-15

    We report the formation of micrometre-sized SiGe/Si tubes by releasing strained SiGe/Si bilayers from substrates in a wet chemical-etching process. In order to explore statistical studies of dynamic formation of microtubes, we fabricated arrays of square bilayers. Due to the dynamic change in curvature of the bilayers, and hence the underlying etch channels, the etching process deviates from a transport-controlled regime to one of kinetic controlled. We identified two distinct modes of etching. A slow etching mode is associated with symmetric surface deformation in which the bilayers mostly retain their initial pattern. In the fast mode, bilayers are asymmetrically deformed while large etch channels are induced and etching becomes kinetically controlled. Etch rate dispersion is directly related to the degree of asymmetry in surface deformation. When the dimensions of the bilayers become significantly larger than the curvature radius, kinetic etching dominates. During the formation of tubes, SiGe/Si bilayers strongly interact with the liquid environment of etchant and solvent. Assisted by the surface tension of evaporating liquids, the tubes are drawn near the substrate and eventually fixed to it because of van der Waals forces. Our study illuminates the dynamic etching and curling processes involved with and provides insight on how a uniform etch rate and consistent curling directions can be maintained.

  1. Formation of microtubes from strained SiGe/Si heterostructures

    Science.gov (United States)

    Qin, H.; Shaji, N.; Merrill, N. E.; Kim, H. S.; Toonen, R. C.; Blick, R. H.; Roberts, M. M.; Savage, D. E.; Lagally, M. G.; Celler, G.

    2005-11-01

    We report the formation of micrometre-sized SiGe/Si tubes by releasing strained SiGe/Si bilayers from substrates in a wet chemical-etching process. In order to explore statistical studies of dynamic formation of microtubes, we fabricated arrays of square bilayers. Due to the dynamic change in curvature of the bilayers, and hence the underlying etch channels, the etching process deviates from a transport-controlled regime to one of kinetic controlled. We identified two distinct modes of etching. A slow etching mode is associated with symmetric surface deformation in which the bilayers mostly retain their initial pattern. In the fast mode, bilayers are asymmetrically deformed while large etch channels are induced and etching becomes kinetically controlled. Etch rate dispersion is directly related to the degree of asymmetry in surface deformation. When the dimensions of the bilayers become significantly larger than the curvature radius, kinetic etching dominates. During the formation of tubes, SiGe/Si bilayers strongly interact with the liquid environment of etchant and solvent. Assisted by the surface tension of evaporating liquids, the tubes are drawn near the substrate and eventually fixed to it because of van der Waals forces. Our study illuminates the dynamic etching and curling processes involved with and provides insight on how a uniform etch rate and consistent curling directions can be maintained.

  2. The origin of blue photoluminescence from nc-Si/SiO2 multilayers

    Institute of Scientific and Technical Information of China (English)

    Ma Zhong-Yuan; Xu Ling; Huang Xin-Fan; Chen Kun-Ji; Feng Duan; Guo Si-Hua; Chen De-Yuan; Wei De-Yuan; Yao Yao; Zhou Jiang; Huang Rui; Li Wei; Xu Jun

    2008-01-01

    Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO2 (ncSi/SiO2) multilayers (MLs) obtained by thermal annealing of SiO/SiO2 MLs for the first time.By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm,the PL peak blueshifts from 457 to 411 nm.Combining the analysis of TEM,Raman and absorption measurement,this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO2.

  3. SiC/Si's CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIP IN SiCp/Al-Si COMPOSITES%SiCp/Al-Si复合材料中SiC/Si的晶体学位向关系

    Institute of Scientific and Technical Information of China (English)

    隋贤栋; 罗承萍; 欧阳柳章; 骆灼旋

    2000-01-01

    用TEM研究了离心铸造和挤压铸造的SiCp/ZL109复合材料,发现Si优先在SiC表面上形核、长大,并形成大量"界面Si"及SiC/Si界面.SiC与Si之间不存在固定的晶体学位向关系,但存在(1101)sic//(111)si,[1120]sic∥[112]si优先出现的位向关系,而(0001)sic∥(111)si不是优先出现的位向关系.

  4. Resonance reflection of acoustic waves in piezoelectric bi-crystalline structures.

    Science.gov (United States)

    Darinskii, Alexander N; Weihnacht, Manfred

    2005-05-01

    The paper studies the bulk wave reflection from internal interfaces in piezoelectric media. The interfaces of two types have been considered. Infinitesimally thin metallic layer inserted into homogeneous piezoelectric crystal of arbitrary symmetry. Rigidly bonded crystals whose piezoelectric coefficients differ by sign but the other material constants are identical. Analytic expressions for the coefficients of mode conversion have been derived. An analysis has been carried out of specific singularities arising when the angle of incidence is such that the resonance excitation of leaky interface acoustic waves occurs. The conditions for the resonance total reflection have been established. The computations performed for lithium niobate (LiNbO3) illustrate general conclusions.

  5. Fission-product SiC reaction in HTGR fuel

    Energy Technology Data Exchange (ETDEWEB)

    Montgomery, F.

    1981-07-13

    The primary barrier to release of fission product from any of the fuel types into the primary circuit of the HTGR are the coatings on the fuel particles. Both pyrolytic carbon and silicon carbide coatings are very effective in retaining fission gases under normal operating conditions. One of the possible performance limitations which has been observed in irradiation tests of TRISO fuel is chemical interaction of the SiC layer with fission products. This reaction reduces the thickness of the SiC layer in TRISO particles and can lead to release of fission products from the particles if the SiC layer is completely penetrated. The experimental section of this report describes the results of work at General Atomic concerning the reaction of fission products with silicon carbide. The discussion section describes data obtained by various laboratories and includes (1) a description of the fission products which have been found to react with SiC; (2) a description of the kinetics of silicon carbide thinning caused by fission product reaction during out-of-pile thermal gradient heating and the application of these kinetics to in-pile irradiation; and (3) a comparison of silicon carbide thinning in LEU and HEU fuels.

  6. Dimensionless Units in the SI

    CERN Document Server

    Mohr, Peter J

    2014-01-01

    The International System of Units (SI) is supposed to be coherent. That is, when a combination of units is replaced by an equivalent unit, there is no additional numerical factor. Here we consider dimensionless units as defined in the SI, {\\it e.g.} angular units like radians or steradians and counting units like radioactive decays or molecules. We show that an incoherence may arise when different units of this type are replaced by a single dimensionless unit, the unit "one", and suggest how to properly include such units into the SI in order to remove the incoherence. In particular, we argue that the radian is the appropriate coherent unit for angles and that hertz is not a coherent unit in the SI. We also discuss how including angular and counting units affects the fundamental constants.

  7. The Pseudo-Eutectic Microstructure and Enhanced Properties in Laser-Cladded Hypereutectic Ti–20%Si Coatings

    Directory of Open Access Journals (Sweden)

    Hui Zhang

    2017-01-01

    Full Text Available Ti5Si3 is an attractive light weight reinforcement phase in hypereutectic Ti–Si-based alloys, however, the proeutectic Ti5Si3 phase is brittle and is easily coarsened when the alloy is prepared under normal solidification conditions, thereby limiting its engineering applications in the aviation and biological industries. In this study, a hypereutectic Ti–20%Si coating with a pseudo-eutectic α-Ti + Ti5Si3 microstructure was successfully fabricated on a commercially available Ti alloy by laser cladding under non-equilibrium rapid solidification conditions. The fine, rod-like and well-dispersed eutectic Ti5Si3 phase, without the primary Ti5Si3 phase, that was produced resulted in a considerable improvement in hardness, corrosion resistance, and fracture resistance when compared to the same compositional alloy prepared by the conventional arc melting technique.

  8. X-ray fluorescence microtomography of SiC shells

    Energy Technology Data Exchange (ETDEWEB)

    Ice, G.E.; Chung, J.S. [Oak Ridge National Lab., TN (United States); Nagedolfeizi, M. [Univ. of Tennessee, Knoxville, TN (United States)

    1997-04-01

    TRISCO coated fuel particles contain a small kernel of nuclear fuel encapsulated by alternating layers of C and SiC. The TRISCO coated fuel particle is used in an advanced fuel designed for passive containment of the radioactive isotopes. The SiC layer provides the primary barrier for radioactive elements in the kernel. The effectiveness of this barrier layer under adverse conditions is critical to containment. The authors have begun the study of SiC shells from TRISCO fuel. They are using the fluorescent microprobe beamline 10.3.1. The shells under evaluation include some which have been cycled through a simulated core melt-down. The C buffer layers and nuclear kernels of the coated fuel have been removed by laser drilling through the SiC and then exposing the particle to acid. Elements of interest include Ru, Sb, Cs, Ce and Eu. The radial distribution of these elements in the SiC shells can be attributed to diffusion of elements in the kernel during the melt-down. Other elements in the shells originate during the fabrication of the TRISCO particles.

  9. Construction of a vector generating both siRNA and a fluorescent reporter: a siRNA study in cultured neurons.

    Science.gov (United States)

    Yoon, Seung Yong; Choi, Jung Eun; Hwang, Onyou; Hong, Hea Nam; Lee, Heuiran; Kim, Yoo Kyum; Cho, Sung-Woo; Kim, Hyun; Kim, DongHou

    2004-08-31

    RNA interference is an important tool for gene silencing. However, its application to primary cultured cells has been limited by low transfection efficiencies. In this work we developed a vector which encodes both siRNA and red fluorescent protein. Using this vector we could markedly suppress green fluorescent protein (GFP) and bim an endogenous gene. Primary cultured cortical neurons transfected with siRNA against doublecortin showed that doublecortin expression was significantly inhibited in nearly all the transfected neurons. This vector identifies the transfected cells and should be useful for loss-of-gene function studies in neurons.

  10. THE STRUCTURE OF LIQUID LI-SI ALLOYS

    NARCIS (Netherlands)

    DEJONG, PHK; VERKERK, P; VANDERLUGT, W; DEGRAAF, LA

    1993-01-01

    The reverse Monte Carlo method is used to analyse neutron diffraction data on liquid Li65Si35. A well defined Si-Si partial pair correlation function is obtained with strong indications for covalent Si-Si bonds. It is also clear that most of the Si4 stars and Si5 rings occurring in solid Li12Si7 hav

  11. Microstructure and mechanical properties of laser melting deposited Ti2Ni3Si/NiTi Laves alloys

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Two Ti2Ni3Si/NiTi Laves phase alloys with chemical compositions of Ni-39Ti-11 Si and Ni-42Ti-8Si (%, mole fraction, the same below), respectively, were fabricated by the laser melting deposition manufacturing process, aiming at studying the effect of Ti,Si contents on microstructure and mechanical properties of the alloys. The Ni-39Ti-llSi alloy consisting of Ti2Ni3Si primary dendrites and Ti2Ni3Si/NiTi eutectic matrix is a conventional hypereutectic Laves phase alloy while the Ni-42Ti-8Si alloy being made up of NiTi primary dendrites uniformly distributed in Ti2Ni3Si/NiTi eutectic is a new hypoeutectic alloy. Mechanical properties of the alloys were investigated by nano-indentation test. The results show that the decrease of Si and the increase of Ti contents change the microstructures of the alloys from hypereutectic to hypoeutectic, which influences the mechanical properties of the alloys remarkably. Corrosion behaviors of the alloys were also evaluated by potentiodynamic anodic polarization curves.

  12. SEMICONDUCTOR MATERIALS Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions

    Science.gov (United States)

    Xiaopeng, Wu; Xiaoqing, Chen; Lijie, Sun; Shun, Mao; Zhuxi, Fu

    2010-10-01

    A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I—V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated. It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction. The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/n-SiC/p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing. It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si. There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.

  13. Dissolution Kinetics of SiO2 into CaO-Fe2O3-SiO2 Slag

    Science.gov (United States)

    Yu, Bin; Lv, Xuewei; Xiang, Shenglin; Xu, Jian

    2016-06-01

    High-basicity sinter is the predominant Fe-bearing material used in blast furnace process in East Asia. The dissolution of SiO2 into molten calcium ferrite influences the assimilation process. In this study, a rotating cylinder method was used to explore the dissolution kinetics of SiO2 into CaO-Fe2O3-SiO2 slag. The influencing factors, including temperature, rotating time and speed, and initial composition of the slag, were considered. Results showed that the dissolution rate increased with increasing rotation speed and temperature, whereas the increase in ω(SiO2) or ω(Fe2O3)/ ω(CaO) ratio in the initial slag composition decreased the dissolution rate. The diffusion coefficient and activation energy of SiO2 during the dissolution process ranged from 2.09 × 10-6 to 6.40 × 10-6 cm2 s-1 and 106.62 to 248.20 kJ mol-1, respectively. Concentration difference between the boundary layer and bulk phase was the primary driving force of the dissolution process; however, this process was also influenced by the slag viscosity and ion diffusivity.

  14. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  15. Ionic S(N)i-Si Nucleophilic Substitution in N-Methylaniline-Induced Si-Si Bond Cleavages of Si2Cl6.

    Science.gov (United States)

    Zhang, Jie; Xie, Ju; Lee, Myong Euy; Zhang, Lin; Zuo, Yujing; Feng, Shengyu

    2016-03-24

    N-Methylaniline-induced Si-Si bond cleavage of Si2Cl6 has been theoretically studied. All calculations were performed by using DFT at the MPWB1K/6-311++G(3df,2p)//MPWB1K/6-31+G(d,p) levels. An ionic SN i-Si nucleophilic substitution mechanism, which is a newly found nucleophilic substitution in silicon-containing compounds, is proposed in the N-methylaniline-induced Si-Si bond cleavage in Si2Cl6. Unlike general S(N)i-Si nucleophilic substitutions that go through a pentacoordinated silicon transition state, ionic nucleophilic substitution goes through a tetracoordinated silicon transition state, in which the Si-Si bond is broken and siliconium ions are formed. Special cleavage of the Si-Si bond is presumably due to the good bonding strength between Si and N atoms, which leads to polarization of the Si-Si bond and eventually to heterolytic cleavage. Calculation results show that, in excess N-methylaniline, the final products of the reaction, including (NMePh)(3-n) SiHCl(n) (n=0-2) and (NMePh)(4-n) SiCl(n) (n=2-3), are the Si-Si cleavage products of Si2Cl6 and the corresponding amination products of the former. The ionic S(N)i-Si nucleophilic substitution mechanism can also be employed to describe the amination of chlorosilane by N-methylaniline. The suggested mechanisms are consistent with experimental data.

  16. An Introduction to the New SI

    Science.gov (United States)

    Knotts, Sandra; Mohr, Peter J.; Phillips, William D.

    2017-01-01

    Plans are under way to redefine the International System of Units (SI) around 2018. The new SI specifies the values of certain physical constants to define units. This article explains the new SI in order to provide a resource for high school teachers as well as for advanced students already familiar with the pre-2018 SI.

  17. An Introduction to the New SI

    Science.gov (United States)

    Knotts, Sandra; Mohr, Peter J.; Phillips, William D.

    2017-01-01

    Plans are under way to redefine the International System of Units (SI) around 2018. The new SI specifies the values of certain physical constants to define units. This article explains the new SI in order to provide a resource for high school teachers as well as for advanced students already familiar with the pre-2018 SI.

  18. Design and Coupled Thermo-Mechanical Analysis of Silicon Carbide Primary Mirror Assembly

    Institute of Scientific and Technical Information of China (English)

    HAN Yuan-yuan; ZHANG Yu-min; HAN Jie-cai

    2006-01-01

    Based on the principle that the thermal expansion coefficient of the support structure should match that of the mirror, three schemes of primary mirror assembly were designed. Of them, the first is fused silica mirror plus 4J32 flexible support plus ZTC4 support back plate, the second K9 mirror plus 4J45 flexible support plus ZTC4 support back plate, and the third SiC mirror plus SiC rigid support back plate. A coupled thermo-mechanical analysis of the three primary mirror assemblies was made with finite element method. The results show that the SiC assembly is the best of all schemes in terms of their combination properties due to its elimination of the thermal expansion mismatch between the materials. The analytical results on the cryogenic property of the SiC primary mirror assembly show a higher surface finish of the SiC mirror even under the cryogenic condition.

  19. Quantum wells based on Si/SiO{sub x} stacks for nanostructured absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Berghoff, B.; Suckow, S.; Roelver, R.; Spangenberg, B.; Kurz, H. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Sologubenko, A.; Mayer, J. [Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, 52074 Aachen (Germany); Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich, 52426 Juelich (Germany)

    2010-11-15

    We report on electrical transport and quantum confinement in thermally annealed Si/SiO{sub x} multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO{sub x} stacks leads to precipitation of excess Si from the SiO{sub x} layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO{sub 2} system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO{sub 2} stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. (author)

  20. Si/SiGe/Si HBT直流特性的可靠性%Reliability of DC characteristics in mesa Si/SiGe/Si HBT

    Institute of Scientific and Technical Information of China (English)

    崔福现; 张万荣

    2003-01-01

    对单台面SiGe HBT在E-B结反偏应力下直流特性的可靠性进行了研究.研究结果表明,随应力时间的增加,开启电压增加,直流电流增益下降,特别是在低E-B正偏电压时下降明显;而交流电流增益退化缓慢.

  1. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  2. Splenic irradiation as primary therapy for prolymphocytic leukemia

    Energy Technology Data Exchange (ETDEWEB)

    Kiss, A.; Haubenstock, A.; Bognar, H.; Scheiderbauer, R.; al-Mobarak, M.; Base, W.

    1989-03-01

    A patient with prolymphocytic leukemia (PLL), a lymphoproliferative disorder that carries a poor prognosis, is presented. The disease was diagnosed at an early stage and treatment could be delayed for four years. When massive, painful splenomegaly developed, splenic irradiation (SI) was chosen as the primary form of therapy and an excellent systemic response could be achieved. Our observation is in agreement with preliminary studies, which advocate SI as the primary form of therapy in PLL. Furthermore, it is emphasized that an early diagnosis of PLL is necessary to establish its true course and that the prognosis may be better than originally thought.

  3. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  4. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

    Science.gov (United States)

    Wang, Yucheng; Jia, Renxu; Zhao, Yanli; Li, Chengzhan; Zhang, Yuming

    2016-11-01

    In this study, the material and electrical properties of La2O3/SiO2/4H-SiC metal-oxide-semiconductor (MOS) capacitors are systematically characterized. Thermal oxidization SiO2 with varying thickness (0 nm, 3.36 nm, 5 nm, 8 nm, and 30 nm) were coated with La2O3 using atomic layer deposition on n-type 4H-SiC. The stacking oxides were measured using atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy, and the MOS capacitors were measured by capacitance-voltage and current-voltage measurements. The results demonstrate that the main gate current leakage mechanisms are dependent on the thickness of the SiO2 oxide under the applied electric field. The primary mechanism for current leakage from the La2O3/4H-SiC MOS capacitor follows the Schottky emission mechanism due to its low conduction band offset. In contrast, the current leakage mechanism for the capacitor with a 3.36 nm SiO2 layer follows the Poole-Frenkel emission mechanism on account of its high trap charge density in the gate dielectric and at the interface. When the thickness of the SiO2 layer increases to 8 nm, lower leakage current is observed by reason of the low trap charge density and high conduction band offset when E ≤ 5 MV/cm. As the electric field strength increases to 5 MV/cm and 5.88 MV/cm (30 nm SiO2: 4.8 MV/cm), the main current leakage mechanism changes to the Fowler-Nordheim tunneling mechanism, which indicates that the La2O3/SiO2 stacking structure can improve the properties of MOS capacitors.

  5. Cationic cell-penetrating peptides as vehicles for siRNA delivery.

    Science.gov (United States)

    Beloor, Jagadish; Zeller, Skye; Choi, Chang Seon; Lee, Sang-Kyung; Kumar, Priti

    2015-01-01

    RNA interference mediated gene silencing has tremendous applicability in fields ranging from basic biological research to clinical therapy. However, delivery of siRNA across the cell membrane into the cytoplasm, where the RNA silencing machinery is located, is a significant hurdle in most primary cells. Cell-penetrating peptides (CPPs), peptides that possess an intrinsic ability to translocate across cell membranes, have been explored as a means to achieve cellular delivery of siRNA. Approaches using CPPs by themselves or through incorporation into other siRNA delivery platforms have been investigated with the intent of improving cytoplasmic delivery. Here, we review the utilization of CPPs for siRNA delivery with a focus on strategies developed to enhance cellular uptake, endosomal escape and cytoplasmic localization of CPP/siRNA complexes.

  6. Reactive diffusion bonding of SiCp/Al composites by insert layers of mixed Al-Si and Al-Si-SiC powders

    Institute of Scientific and Technical Information of China (English)

    Jihua Huang; Yueling Dong; Yun Wan; Jiangang Zhang; Hua Zhang

    2005-01-01

    Mixed Al-Si and Al-Si-SiC powders were employed as insert layers to reactive diffusion bond SiCp/6063 MMC (metal matrix composites). The results show that SiCp/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder have a dense joining layer with a typical hypoeutectic microstructure. Using the mixed Al-Si-SiC powder as the insert layer, SiCp/6063 MMC can be reactive diffusion bonded by a composite joint. Because of the SiC segregation, however, there are a number of porous zones in the joining layer, which results in the bad shear strength of the joints reactive diffusion bonded by the insert layer of the mixed Al-SiSiC powder, even lower than that of the joints reactive diffusion bonded by the insert layer of the mixed Al-Si powder. Ti and Mg added in the insert layers obviously improve the strength of the joints reactive diffusion bonded by the insert layer of the mixed AlSi-SiC powder, especially, Mg has a more obvious effect.

  7. Si{endash}N linkage in ultrabright, ultrasmall Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Rogozhina, E.; Belomoin, G.; Smith, A.; Abuhassan, L.; Barry, N.; Akcakir, O.; Braun, P. V.; Nayfeh, M. H.

    2001-06-04

    Ultrabright ultrasmall ({similar_to}1 nm) blue luminescent Si{sub 29} nanoparticles are chlorinated by reaction with Cl{sub 2} gas. A Si{endash}N linkage is formed by the reaction of the chlorinated particles with the functional amine group in butylamine. Fourier transform infrared spectroscopy and x-ray photospectroscopy measurements confirm the N linkage and the presence of the butyl group, while emission, excitation, and autocorrelation femtosecond optical spectroscopy show that, after the linkage formation, the particles with the ultrabright blue luminescent remain, but with a redshift of 40 nm. {copyright} 2001 American Institute of Physics.

  8. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries

    Directory of Open Access Journals (Sweden)

    Keiichiro Homma

    2014-04-01

    Full Text Available Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD at a material throughput of 480 g h−1. The powders are fundamentally an aggregate of primary ~20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g−1 after 100 cycles at the same time.

  9. Room-temperature formation of Pt$_3$Si/Pt$_2$Si films on poly-Si substrates

    CERN Document Server

    Dubkov, V P; Chizh, K V; Yuryev, V A

    2016-01-01

    We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt and poly-Si films as a result of Pt magnetron sputtering at room temperature. This layer likely appears due to high enough temperature of Pt ions in the magnetron plasma sufficient for chemical reaction of the silicide film formation on the Si surface. The Pt$_3$Si layer likely forms from the Pt--Pt$_3$Si layer (Pt$_{95}$Si$_5$), which arises under Pt film during the magnetron sputtering, as a result of Pt removal by wet etching.

  10. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Thickness effect on the formation of SiC nanoparticles in sandwiched Si/C/Si and C/Si multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Chung, C.K., E-mail: ckchung@mail.ncku.edu.t [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan (China); Wu, B.H.; Chen, T.S.; Peng, C.C.; Lai, C.W. [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan (China)

    2009-08-31

    The effect of carbon (C) and amorphous silicon (a-Si) thicknesses on the formation of SiC nanoparticles (np-SiC) in sandwiched Si/C/Si and C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering system and vacuum thermal annealing at 500, 700, 900 {sup o}C for 1.0 h. Three-layer a-Si/C/a-Si structures with thicknesses of 50/200/50 nm and 75/150/75 nm and a two-layer C/a-Si structure of 200/50 nm were examined in this study. The size and density of np-SiC were strongly influenced by the annealing temperature, a-Si thickness and layer number. Many np-SiC appeared at 900 {sup o}C at a density order about 10{sup 8} cm{sup -2} in both three-layer structures while no particles formed in the two-layer structure. The thick a-Si structure (75/150/75 nm) produces a particle density approximately 1.8 times higher than thin structure (50/200/50 nm). This implies that thick a-Si structure had a lower activation energy of SiC formation compared to the thin a-Si structure. Few particles were found at 700 {sup o}C and no particles at 500 {sup o}C in both three-layer structures. The np-SiC formation is a thermally activated reaction. The higher temperature leads to higher particle density. A mechanism of np-SiC formation in thermodynamic and kinetic viewpoints is proposed.

  12. Effect of phosphor addition on eutectic solidification and microstructure of an Al-13%Si alloy

    Directory of Open Access Journals (Sweden)

    Liao Hengcheng

    2011-11-01

    Full Text Available As the refiner or modifier, the master alloys containing high concentration phosphor are widely used in preparing eutectic or hypereutectic Al-Si alloys. To study the effect of phosphor addition on the eutectic solidification and microstructure of the Al-13%Si alloy, an investigation has been undertaken by means of thermal analysis and micro/macro-structure observation. Results indicate that addition of phosphor in near eutectic Al-Si alloy promotes the nucleation of eutectic but has little refinement impact on primary Si particles as expected. Conversely, both primary Si particles and eutectic Si flakes become slightly coarser in P-rich alloys. The coarsening of eutectic Si flakes ties closely to the increased eutectic growth temperature with phosphor addition. The eutectic solidification of the alloy proceeds from the near mold zone towards the center, and it is also found that a few independent nucleation regions emerge in liquid at the solidification front due to the addition of phosphor.

  13. Design and finite element analysis of lightmass silicon carbide primary mirror

    Institute of Scientific and Technical Information of China (English)

    HAN Yuan-yuan; ZHANG Yu-min; HAN Jie-cai; ZHANG Jian-han; YAO Wang; ZHOU Yu-feng

    2006-01-01

    Primary mirror is one of the key components in the space remote sensing system. To minimize the mass of the mirror without compromising its stiffness and decrease the deformation of the mirror surface at the different temperatures are the mainly two objects in the development of the primary mirror. Silicon carbide (SiC),the most promising optical material,was used as the material of the primary mirror with triangle lightmass structure in a Cassegrain system. By using finite element method,the properties of the SiC mirror were compared with that of the traditional Be mirror and fused silica mirror. The results of static,dynamic and thermo-mechanical analysis indicate that the deformation of the mirror surface caused by temperature field is much bigger than that caused by gravity field. The SiC mirror has the best overall properties,and the SiC material is much suitable for the primary mirror.

  14. Mo-Si alloy development

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.T.; Heatherly, L.; Wright, J.L. [Oak Ridge National Lab., TN (United States)

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  15. HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

    Institute of Scientific and Technical Information of China (English)

    黄文韬; 罗广礼; 史进; 邓宁; 陈培毅; 钱佩信

    2003-01-01

    High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.

  16. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    Energy Technology Data Exchange (ETDEWEB)

    Kowbel, W.; Tsou, K.T.; Withers, J.C. [MER Corp., Tucson, AZ (United States); Youngblood, G.E. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing.

  17. Durability Evaluation of a Thin Film Sensor System With Enhanced Lead Wire Attachments on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago

    2000-01-01

    An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.

  18. Infrared Spectra and Density Functional Calculations for Singlet CH2═SiX2 and Triplet HC-SiX3 and XC-SiX3 Intermediates in Reactions of Laser-Ablated Silicon Atoms with Di-, Tri-, and Tetrahalomethanes.

    Science.gov (United States)

    Cho, Han-Gook; Andrews, Lester

    2016-03-21

    Reactions of laser-ablated silicon atoms with di-, tri-, and tetrahalomethanes in excess argon were investigated, and the products were identified from the matrix infrared spectra, isotopic shifts, and density functional theory energy, bond length, and frequency calculations. Dihalomethanes produce planar singlet silenes (CH2═SiX2), and tri- and tetrahalomethanes form triplet halosilyl carbenes (HC-SiX3 and XC-SiX3). The Si-bearing molecules identified are the most stable, lowest-energy product in the reaction systems. While the C-Si bond in the silene is a true double bond, the C-Si bond in the carbene is a shortened single bond enhanced by hyperconjugation of the two unpaired electrons on C to σ*(Si-X) orbitals, which contributes stabilization through a small amount of π-bonding and reduction of the HCSi or XCSi angles. The C-Si bond lengths in these carbenes (1.782 Å for HC-SiF3) are between the single-bond length in the unobserved first insertion intermediate (1.975 Å for CHF2-SiF) and the double-bond length in the silene (1.704 Å for CHF═SiF2). The silicon s(2)p(2) and titanium s(2)d(2) electron configurations produce similar primary products, but the methylidyne with Ti has a bond to carbon stronger than that of the halosilyl carbene.

  19. Progress of Si-based Optoelectronic Devices

    Institute of Scientific and Technical Information of China (English)

    PENG Ying-cai; FU Guang-sheng; WANG Ying-long; SHANG Yong

    2004-01-01

    Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize ali-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si-based optoelectronic devices, such as light-emitting diodes,optical waveguides devices, Si photonic bandgap crystals,and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

  20. Honda Civic Mugen Si Sedan

    Institute of Scientific and Technical Information of China (English)

    Prometheus

    2007-01-01

    美国本田汽车公司宣布08款本田Civic Mugen,SiSedan将于10月中旬正式亮相。这辆Civic Mugen Si Sedan配备有一个高性能的悬挂系统、锻造的铝质车轮、空气动力挠流体的设计式样和一个跑车化调校排气系统,新车搭载1998cc i-VTEC直四自然吸气引擎,

  1. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  2. Morphology Analysis of Si Island Arrays on Si(001)

    Science.gov (United States)

    González-González, A.; Alonso, M.; Navarro, E.; Sacedón, J. L.; Ruiz, A.

    2010-12-01

    The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent reports have shown that self-assembled distributions of fourfold pyramid-like islands develop in 5-nm thick Si layers grown at substrate temperatures of 650 and 750°C on HF-prepared Si(001) substrates. Looking for wielding control and understanding the phenomena involved in this surface nanostructuring, we develop and apply a formalism that allows for processing large area AFM topographic images in a shot, obtaining surface orientation maps with specific information on facets population. The procedure reveals some noticeable features of these Si island arrays, e.g. a clear anisotropy of the in-plane local slope distributions. Total island volume analysis also indicates mass transport from the substrate surface to the 3D islands, a process presumably related to the presence of trenches around some of the pyramids. Results are discussed within the framework of similar island arrays in homoepitaxial and heteroepitaxial semiconductor systems.

  3. Laser annealing of sputter-deposited -SiC and -SiCN films

    Indian Academy of Sciences (India)

    M A Fraga; M Massi; I C Oliveira; F D Origo; W Miyakawa

    2011-12-01

    This work describes the laser annealing of -SiC and -SiCN films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of -SiCN thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiCN films.

  4. First siRNA library screening in hard-to-transfect HUVEC cells.

    Science.gov (United States)

    Zumbansen, Markus; Altrogge, Ludger M; Spottke, Nicole Ue; Spicker, Sonja; Offizier, Sheila M; Domzalski, Sandra Bs; St Amand, Allison L; Toell, Andrea; Leake, Devin; Mueller-Hartmann, Herbert A

    2009-10-29

    Meaningful RNAi-based data for target gene identification are strongly dependent on the use of a biologically relevant cell type and efficient delivery of highly functional siRNA reagents into the selected cell type. Here we report the use of the Amaxa(R) Nucleofector(R) 96-well Shuttle(R) System for siRNA screening in primary cells. Lonza's Clonetics(R) HUVEC-Human Umbilical Vein Endothelial Cells were transfected with Thermo Scientific Dharmacon siGENOME(R) siRNA Libraries targeting protein kinases and cell cycle related genes and screened for genes important for cell viability. Of the 37 primary hits, down-regulation of 33 led to reduced proliferation or increased cell death, while down-regulation of two allowed for better cell viability. The validated four genes out of the 16 strongest primary hits (COPB2, PYCS, CDK4 and MYC) influenced cell proliferation to varying degrees, reflecting differing importance for survival of HUVEC cells. Our results demonstrate that the Nucleofector(R) 96-well Shuttle(R) System allows the delivery of siRNA libraries in cell types previously considered to be difficult to transfect. Thus, identification and validation of gene targets can now be conducted in primary cells, as the selection of cell types is not limited to those accessible by lipid-mediated transfection.

  5. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

    Institute of Scientific and Technical Information of China (English)

    Wang Jianqiang; Gao Hua; Zhang Jian; Meng Fanying; Ye Qinghao

    2012-01-01

    We investigate the recombination mechanism in an a-Si/c-Si interface,and analyze the key factors that influence the interface passivation quality,such as Qs,δp/δn and Dit.The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδn =pδp and the defect level Et equal to Ei (c-Si),the defect states are the most effective recombination center,AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier.Interface states (Dit) severely deteriorate Voc compared with Jsc for a-Si/c-Si HJ cell performance when Dit is over 1 × 1010 cm-2.eV-1.For a c-Si(P)/a-Si(P+) structure,ΦBSF in c-Si and Φo in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P+) interface recombination.

  6. Wear Behavior of Al-Mg2Si Cast In-situ Composite: Effect of Mg2Si Different Volume Fractions

    Science.gov (United States)

    Ghiasinejad, J.; Emamy, M.; Ghorbani, M. R.; Malekan, A.

    2010-06-01

    Al-Mg2Si in situ composites are great candidates for automobile brake discs due to their low density, reasonably high young's modulus and low thermal expansion coefficient. Thus, understanding wear properties of this composite is of a great importance. In this study wear behavior of an in-situ Al-Mg2Si composite, prepared from a simple casting route, has been investigated using a pin-on-disc configuration concerning the effect of Mg2Si volume fractions, 15, 20 and 25% respectively. It was found that the weight loss increases with increase in reinforce volume fraction which can be due to a coarse morphology of primary Mg2Si particles. It was found that the variations of weight loss with sliding distance comprise different regimes of which the mechanisms are discussed.

  7. Optimal design and validation of antiviral siRNA for targeting hepatitis B virus

    Institute of Scientific and Technical Information of China (English)

    Jie FU; Zhong-ming TANG; Xin GAO; Fan ZHAO; Hui ZHONG; Mao-rong WEN; Xiao SUN; Hai-feng SONG; Xiao-hong QIAN

    2008-01-01

    Aim: Optimal design of antiviral short-interfering RNA (siRNA) targeting highly divergent hepatitis B virus (HBV) was validated by quantitative structure-activity relationship (QSAR) analysis. Methods: The potency of 23 synthetic siRNAs targeting 23 sites throughout HBV pregenomic RNA were evaluated at 10 nmol/L by determining the inhibition on the expression of S/P/pregenomic mRNA and hepatitis B surface antigen (HBsAg) quantitatively in HepG2.2.15 cells. Genotype homology within HBV genomes was identified through plentiful computational analysis and the multiple linear regression analysis was made to validate the relationship between the functional siRNAs and primary characteristics. Based on the preliminary results, relationships between different determined endpoints [S/P mRNA, HBsAg, C/P mRNA, hepatitis B e antigen (HBeAg) and viral DNA load] and siRNA efficacy evaluation were investigated. Results: Genotype homology, open reading frame (ORF) S/E X and C had tight correlation with the ability of siRNAs on inhibiting the expression of S/P/Pregenomic mRNA and HBsAg (P<0.01), of which, ORF C was negatively correlated with the siRNA potency (P<0.05). Further study showed that siRNA potency evaluation was influenced by different determined endpoints. P-target siRNAs showed significant inhibition on the S mRNA and HBsAg expression. S-target siRNAs inhibited the expression of S mRNA and HBsAg strongly. X-target siRNAs played active roles in inhibiting all 5 determined endpoints. C-target siRNAs blocked the expression of C mRNA, HBeAg and viral DNA load significantly. Conclusion: The antiviral potency of siRNA was relevant to its primary characteristics and determined endpoints were important for siRNA efficacy evaluation for complex genome with overlapping ORF, which was helpful for siRNA optimal design.

  8. Refinement of Mg{sub 2}Si reinforcement in a commercial Al–20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium

    Energy Technology Data Exchange (ETDEWEB)

    Nordin, Nur Azmah; Farahany, Saeed, E-mail: saeedfarahany@gmail.com; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

    2013-12-15

    Refinement by addition elements of Al–Mg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

  9. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  10. Lightweight C/SiC mirrors for space application

    Science.gov (United States)

    Zhou, Hao; Zhang, Chang-rui; Cao, Ying-bin; Zhou, Xin-gui

    2006-02-01

    Challenges in high resolution space telescopes have led to the desire to create large primary mirror apertures. Ceramic mirrors and complex structures are becoming more important for high precision lightweight optical applications in adverse environments. Carbon-fiber reinforced silicon carbide (C/SiC) has shown great potential to be used as mirror substrate. This material has a high stiffness to weight ratio, dimensional stability from ambient to cryo temperatures, and thermal conductivity, low thermal expansion as well. These properties make C/SiC very attractive for a variety of applications in precision optical structures, especially when considering space-borne application. In this paper, lightweight C/SiC mirror prepared for a scan mirror of a high resolution camera is presented. The manufacturing of C/SiC mirror starts with a porous rigid felt made of short chopped carbon fibers. The fibers are molded with phenolic resin under pressure to form a carbon fiber reinforced plastic blank, followed by a pyrolization process by which the phenolic resin reacts to a carbon matrix. The C/C-felt can be machined by standard computer controlled milling techniques to any virtual shape. This is one of the most significant advantages of this material, as it drastically reduces the making costs and enables the manufacture of truly ultra-lightweight mirrors, reflectors and structures. Upon completion of milling, the C/C-felt preform is mounted in a high-temperature furnace together with silicon and heated under vacuum condition to 1500°C at which the silicon changes into liquid phase. Subsequently, the molten silicon is infiltrated into the porous preform under capillary forces to react with carbon matrix and the surfaces of the carbon fibers to form a density C/SiC substrate. The C/SiC material retains the preform shape to within a tight tolerance after sintering means the ceramization process is a nearly net shaping process. Reactive melt infiltrated C/SiC, followed by

  11. Cu clustering stage before the crystallization in Fe-Si-B-Nb-Cu amorphous alloys

    DEFF Research Database (Denmark)

    Ohnuma, M.; Hono, K.; Onodera, H.

    1999-01-01

    The Cu clustering stage before the crystallization of Fe-Si-B-Nb-Cu amorphous alloys have been studied by three dimensional atom probe (3DAP) small-angle neutron scattering (SANS) and high sensitive differential calorimetry (DSC). Cu clustering occurs prior to the onset of the primary crystalliza......The Cu clustering stage before the crystallization of Fe-Si-B-Nb-Cu amorphous alloys have been studied by three dimensional atom probe (3DAP) small-angle neutron scattering (SANS) and high sensitive differential calorimetry (DSC). Cu clustering occurs prior to the onset of the primary...

  12. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures.

    Science.gov (United States)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-02-07

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance-voltage (C-V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3-4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements.

  13. Preparation of Ag@mSiO{sub 2} and Pt@mSiO{sub 2}nano composites using trioctylmethyl ammonium hydrogen phthalate (TOMAHP) ionic liquid as reaction medium

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Sujoy, E-mail: sujoyb@barc.gov.in [Chemical Engineering Group, Bhabha Atomic Research Centre, Mumbai 400085 (India); Dasgupta, Kinshuk [Materials Group, Bhabha Atomic Research Centre, Mumbai 400085 (India); Bahadur, Jitendra [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tewari, Raghavendra [Materials Group, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mazumder, Subhasish [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2016-09-15

    A novel one step green chemistry approach utilizing trioctylmethyl ammonium hydrogen phthalate (TOMAHP), task specific ionic liquid has been attempted for synthesis of Ag and Pt nanoparticles supported on silica (Ag@mSiO{sub 2} and Pt@mSiO{sub 2}). Structure, size distribution and morphology of these nano-composite particles were evaluated using X-ray diffraction (XRD), transmission electron microscopy (TEM), small angle neutron scattering (SANS) as well as small angle X-ray scattering (SAXS) techniques. The XRD results show that Ag/Pt metal nanoparticles deposited on to SiO{sub 2} surface are face center cubic (fcc) in nature. The TEM and SAXS/SANS results show the morphology and size distributions of Ag and Pt nanoparticles loaded on to the surface of SiO{sub 2}. It has been found that Ag nanoparticles are well dispersed on to the SiO{sub 2} surface and are quite monodisperse in size, whereas Pt nanoparticles are quite polydisperse in size and forms aggregate or chain like structure on SiO{sub 2} surface containing primary nanoparticles of typical size range 3–7 nm. The stability of nanoparticles, which controls its dispersion on SiO{sub 2} substrate, has been discussed. - Graphical abstract: Mechanism for Ag@mSiO{sub 2} and Pt@mSiO{sub 2} nano composites in TOMAHP ionic liquid medium. - Highlights: • Novel methods for preparation of Pt@SiO{sub 2} and Ag@SiO{sub 2} nano composite in functionalized ionic liquid. • Pt@SiO{sub 2} and Ag@SiO{sub 2} nano composite are characterized using XRD, TEM as well as small angle x-ray scattering techniques. • The sizes of nano composite is <10 nm in size. • The method is simple one step, green chemical reduction method to prepare SiO{sub 2} support nano catalyst.

  14. Three carbon pairs in Si

    Energy Technology Data Exchange (ETDEWEB)

    Docaj, A. [Physics Department, Texas Tech University, Lubbock, TX 79409-1051 (United States); Estreicher, S.K., E-mail: Stefan.Estreicher@ttu.edu [Physics Department, Texas Tech University, Lubbock, TX 79409-1051 (United States)

    2012-08-01

    Carbon impurities in Si are common in floating-zone and cast-Si materials. The simplest and most discussed carbon complex is the interstitial-substitutional C{sub i}C{sub s} pair, which readily forms when self-interstitials are present in the material. This pair has three possible configurations, each of which is electrically active. The less common C{sub s}C{sub s} pair has been studied in irradiated material but has also recently been seen in as-grown C-rich cast-Si, which is commonly used to fabricate solar cells. The third pair consists of two interstitial C atoms: C{sub i}C{sub i}. Although its formation probability is low for several reasons, the C{sub i}C{sub i} pair is very stable and electrically inactive. In this contribution, we report preliminary results of first-principles calculations of these three C pairs in Si. The structures, binding energies, vibrational spectra, and electrical activity are predicted.

  15. Using SI Units in Astronomy

    Science.gov (United States)

    Dodd, Richard

    2011-12-01

    1. Introduction; 2. An introduction to SI units; 3. Dimensional analysis; 4. Unit of angular measure (radian); 5. Unit of time (second); 6. Unit of length (metre); 7. Unit of mass (kilogram); 8. Unit of luminous intensity (candela); 9. Unit of thermodynamic temperature (kelvin); 10. Unit of electric current (ampere); 11. Unit of amount of substance (mole); 12. Astronomical taxonomy; Index.

  16. Effect of Al–5Ti–C Master Alloy on the Microstructure and Mechanical Properties of Hypereutectic Al–20%Si Alloy

    Directory of Open Access Journals (Sweden)

    Wanwu Ding

    2014-02-01

    Full Text Available Al–5Ti–C master alloy was prepared and used to modify hypereutectic Al–20%Si alloy. The microstructure evolution and mechanical properties of hypereutectic Al–20%Si alloy with Al–5Ti–C master alloy additions (0, 0.4, 0.6, 1.0, 1.6 and 2.0 wt% were investigated. The results show that, Al–5Ti–C master alloy (0.6 wt%, 10 min can significantly refine both eutectic and primary Si of hypereutectic Al–20%Si alloy. The morphology of the primary Si crystals was significantly refined from a coarse polygonal and star-like shape to a fine polyhedral shape and the grain size of the primary Si was refined from roughly 90–120 μm to 20–50 μm. The eutectic Si phases were modified from a coarse platelet-like/needle-like structure to a fine fibrous structure with discrete particles. The Al–5Ti–C master alloy (0.6 wt%, 30 min still has a good refinement effect. The ultimate tensile strength (UTS, elongation (El and Brinell hardness (HB of Al–20%Si alloy modified by the Al–5Ti–C master alloy (0.6 wt%, 10 min increased by roughly 65%, 70% and 51%, respectively, due to decreasing the size and changing the morphology on the primary and eutectic Si crystals. The change in mechanical properties corresponds to evolution of the microstructure.

  17. Influence of tin on the structure and properties of as-cast Ti-rich Ti-Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Bulanova, M.; Tretyachenko, L.; Meleshevich, K.; Saltykov, V.; Vereshchaka, V.; Galadzhyj, O.; Kulak, L.; Firstov, S

    2003-02-17

    By the methods of DTA, X-ray diffraction, metallography and microprobe analysis, phase equilibria in the Ti-corner (more than 50 at.% Ti) of the Ti-Si-Sn system were studied. The solidus projection and the melting diagram (solidus+liquidus) were constructed. A new ternary compound T of composition Ti{sub 5}Si{sub 1.2-1.6}Sn{sub 1.8-1.4} was found to form with the crystal structure of W{sub 5}Si{sub 3}-type. The ternary eutectic equilibrium L{r_reversible}<{beta}-Ti>+Si{sub 3}>+ was established to occur at 1460 deg. C with the composition of the invariant point E at {approx}77Ti-9Si-14Sn. Microhardness measurements were carried out for the primary grains of the alloys with 5 at.% Si.

  18. The impact resistance of SiC and other mechanical properties of SiC and Si3N4

    Science.gov (United States)

    Bradt, R. C.

    1984-01-01

    Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

  19. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira; Katoh, Yutai [Kyoto Univ., Uji, Kyoto (Japan); Hasegawa, Akira [Tohoku Univ., Aramaki, Sendai (Japan); Snead, L. [Oak Ridge National Lab., TN (United States); Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  20. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  1. Superior solid solubility of MnSiO3 in CaSiO3 perovskite

    Science.gov (United States)

    Li, Lin; Nagai, Takaya; Seto, Yusuke; Fujino, Kiyoshi; Kawano, Jun; Itoh, Shoich

    2015-02-01

    The silicate perovskite phase relation between CaSiO3 and MnSiO3 was investigated at 35-52 GPa and at 1,800 K using laser-heated diamond anvil cells combined with angle-dispersive synchrotron X-ray diffraction and energy-dispersive X-ray spectroscopic chemical analyses with scanning or transmission electron microscopy. We found that MnSiO3 can be incorporated into CaSiO3 perovskite up to 55, and 20 mol % of CaSiO3 is soluble in MnSiO3 perovskite. The range of 55-80 mol % of MnSiO3 in the CaSiO3-MnSiO3 perovskite system could be immiscible. We also observed that the two perovskite structured phases of the Mn-bearing CaSiO3 and the Ca-bearing MnSiO3 coexisted at these conditions. The Mn-bearing CaSiO3 perovskite has non-cubic symmetry and the Ca-bearing MnSiO3 perovskite has an orthorhombic structure with space group Pbnm. All the perovskite structured phases in the CaSiO3-MnSiO3 system convert to the amorphous phase during pressure release. MnSiO3 is the first chemical component confirmed to show such a superior solid solubility in CaSiO3 perovskite.

  2. Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

    Science.gov (United States)

    Dingemans, G.; Mandoc, M. M.; Bordihn, S.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2011-05-01

    Very low surface recombination velocities field-effect passivation was absent for a reference stack comprising thermally grown SiO2. The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures >800 °C.

  3. Study on the Formation and Precipitation Mechanism of Mn5Si3 Phase in the MBA-2 Brass Alloy

    Science.gov (United States)

    Li, Hang; Jie, Jinchuan; Zhang, Pengchao; Jia, Chunxu; Wang, Tongmin; Li, Tingju

    2016-06-01

    Mn5Si3 is an attractive dispersion in the special brass, owing to its high hardness and high wear resistance. In the present study, synchrotron X-ray radiography and rapid cooling were applied to investigate the formation mechanism of Mn5Si3 phase in the MBA-2 brass alloy. The primary Mn5Si3 phase is proved to exist stably in the alloy melt and nucleate from the melt at temperatures above 1373 K (1100 °C). In addition, the precipitation mechanism of Mn5Si3 phase is addressed systematically by the isothermal heat treatment. The Mn5Si3 particles are observed to precipitate from the matrix at temperatures above 1023 K (750 °C), and a crystallographic orientation relationship is found between the precipitated Mn5Si3 particle and β phase: (110)_{β } //(1overline{1} 00)_{{{{Mn}}5 {{Si}}3 }} and [overline{1} 11]_{β } //[11overline{2} overline{2} ]_{{{{Mn}}5 {{Si}}3 }} . However, the precipitation of Mn5Si3 phase is thermodynamically inhibited at lower temperatures, which can be ascribed to the increase in the Gibbs free energy of formation of Mn5Si3 with decreasing the temperature.

  4. An inside job for siRNAs.

    Science.gov (United States)

    Golden, Daniel E; Gerbasi, Vincent R; Sontheimer, Erik J

    2008-08-08

    Among the three main categories of small silencing RNAs in insects and mammals-siRNAs, miRNAs, and piRNAs-siRNAs were thought to arise primarily from exogenous sources, whereas miRNAs and piRNAs arise from endogenous loci. Recent work in flies and mice reveals several classes of endogenous siRNAs (endo-siRNAs) that contribute to functions previously reserved for miRNAs and piRNAs, including gene regulation and transposon suppression.

  5. An siRNA-based functional genomics screen for the identification of regulators of ciliogenesis and ciliopathy genes

    NARCIS (Netherlands)

    Wheway, G.; Schmidts, M.; Mans, D.A.; Szymanska, K.; Nguyen, T.M.; Racher, H.; Phelps, I.G.; Toedt, G.; Kennedy, J.; Wunderlich, K.A.; Sorusch, N.; Abdelhamed, Z.A.; Natarajan, S.; Herridge, W.; Reeuwijk, J. van; Horn, N.; Boldt, K.; Parry, D.A.; Letteboer, S.J.F.; Roosing, S.; Adams, M.; Bell, S.M.; Bond, J.; Higgins, J.; Morrison, E.E.; Tomlinson, D.C.; Slaats, G.G.; Dam, T.J.P. van; Huang, L.; Kessler, K.; Giessl, A.; Logan, C.V.; Boyle, E.A.; Shendure, J.; Anazi, S.; Aldahmesh, M.; Hazzaa, S. Al; Hegele, R.A.; Ober, C.; Frosk, P.; Mhanni, A.A.; Chodirker, B.N.; Chudley, A.E.; Lamont, R.; Bernier, F.P.; Beaulieu, C.L.; Gordon, P.; Pon, R.T.; Donahue, C.; Barkovich, A.J.; Wolf, L.; Toomes, C.; Thiel, C.T.; Boycott, K.M.; McKibbin, M.; Inglehearn, C.F.; Stewart, F.; Omran, H.; Huynen, M.A.; Sergouniotis, P.I.; Alkuraya, F.S.; Parboosingh, J.S.; Innes, A.M.; Willoughby, C.E.; Giles, R.H.; Webster, A.R.; Ueffing, M.; Blacque, O.; Gleeson, J.G.; Wolfrum, U.; Beales, P.L.; Gibson, T.; Doherty, D.; Mitchison, H.M.; Roepman, R.; Johnson, C.A.

    2015-01-01

    Defects in primary cilium biogenesis underlie the ciliopathies, a growing group of genetic disorders. We describe a whole-genome siRNA-based reverse genetics screen for defects in biogenesis and/or maintenance of the primary cilium, obtaining a global resource. We identify 112 candidate ciliogenesis

  6. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  7. An introduction to the New SI

    CERN Document Server

    Knotts, Sandra; Phillips, William D

    2015-01-01

    Plans are underway to redefine the International System of Units (SI) around 2018. The New SI specifies the values of certain physical constants to define units. This article explains the New SI in a way that could be used to present it to high-school physics classes.

  8. Emission efficiency limit of Si nanocrystals

    NARCIS (Netherlands)

    Limpens, R.; Luxembourg, S.L.; Weeber, A.W.; Gregorkiewicz, T.

    2016-01-01

    One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use

  9. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  10. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  11. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive

  12. Ultrasound assisted siRNA delivery using PEG-siPlex loaded microbubbles.

    Science.gov (United States)

    Vandenbroucke, Roosmarijn E; Lentacker, Ine; Demeester, Joseph; De Smedt, Stefaan C; Sanders, Niek N

    2008-03-20

    Short interfering RNA (siRNA) attracts much attention for the treatment of various diseases. However, its delivery, especially via systemic routes, remains a challenge. Indeed, naked siRNAs are rapidly degraded, while complexed siRNAs massively aggregate in the blood or are captured by macrophages. Although this can be circumvented by PEGylation, we found that PEGylation had a strong negative effect on the gene silencing efficiency of siRNA-liposome complexes (siPlexes). Recently, ultrasound combined with microbubbles has been used to deliver naked siRNA but the gene silencing efficiency is rather low and very high amounts of siRNA are required. To overcome the negative effects of PEGylation and to enhance the efficiency of ultrasound assisted siRNA delivery, we coupled PEGylated siPlexes (PEG-siPlexes) to microbubbles. Ultrasound radiation of these microbubbles resulted in massive release of unaltered PEG-siPlexes. Interestingly, PEG-siPlexes loaded on microbubbles were able to enter cells after exposure to ultrasound, in contrast to free PEG-siPlexes, which were not able to enter cells rapidly. Furthermore, these PEG-siPlex loaded microbubbles induced, in the presence of ultrasound, much higher gene silencing than free PEG-siPlexes. Additionally, the PEG-siPlex loaded microbubbles only silenced the expression of genes in the presence of ultrasound, which allows space and time controlled gene silencing.

  13. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive w

  14. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the mic

  15. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.; Rudolph, H.

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are identifie

  16. MoSi2 oxidation resistance coatings for Mo5Si3/MoSi2 composites

    Institute of Scientific and Technical Information of China (English)

    YAN Jianhui; XU Hongmei; ZHANG Houan; TANG Siwen

    2009-01-01

    In order to improve the oxidation resistance properties of 30 at.% Mo5Si3/MoSi2 composite at high temperature in air, a molybdenum disili-tide coating was prepared on its surface by a molten salt technology. XRD and SEM analysis showed that only tetragonal MoSi2 phase ex-isted in the coating after being siliconized for 5 h at 900℃. The oxidation film formed on the uncoated sample was not dense, so that oxygen diffused easily through it. The volatilization of MoO3 resulted in the oxidation film separating from the substrate. The MoSi2coating was proved to be an effective method to prevent 30 at.% MosSi3/MoSi2 composites from being oxidized at 1200℃. A dense glassy SiO2 film was formed on the MoSi2 coating surface, which acted as a barrier layer for the diffusion of oxygen atoms to the substrate. The 30at.% Mo5Si3/MoSi2 composites with a MoSi2 coating showed much better oxidation resistance at high temperature.

  17. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  18. Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

    Science.gov (United States)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.

  19. Si Scott溜冰鞋

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Vauxhall Ice Skate公司特别邀请Si Scott为Vauxhall Ice Skate event活动设计了一款造型奇特的溜冰鞋:鞋身以轿车模样出现下面则是冰刀,再加上设计师的非凡创意涂鸦,令溜冰鞋充满童趣。

  20. Nanoporosity of Si (100) bars

    Science.gov (United States)

    Novikov, S. N.; Timoshenkov, S. P.; Minaev, V. S.; Goryunova, E. P.; Gerasimenko, N. N.; Smirnov, D. I.

    2016-09-01

    Si(100) samples cut from a typical bar (100 mm in diameter) prepared using industrial technology are studied. Measurements of the electron work function (EWF) show that the size effects in these samples (a reduction in thickness along with a sample's area and the EWF) detected earlier were due to nanostructure porosity that was buried by the technological treatment of a bar's surface. This hidden nanoporosity is assumed to be a manifestation of the secondary crystal structure.

  1. Lattice dislocation in Si nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Omar, M.S., E-mail: dr_m_s_omar@yahoo.co [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Taha, H.T. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)

    2009-12-15

    Modified formulas were used to calculate lattice thermal expansion, specific heat and Bulk modulus for Si nanowires with diameters of 115, 56, 37 and 22 nm. From these values and Gruneisen parameter taken from reference, mean lattice volumes were found to be as 20.03 A{sup 3} for the bulk and 23.63, 29.91, 34.69 and 40.46 A{sup 3} for Si nanowire diameters mentioned above, respectively. Their mean bonding length was calculated to be as 0.235 nm for the bulk and 0.248, 0.269, 0.282 and 0.297 nm for the nanowires diameter mentioned above, respectively. By dividing the nanowires diameter on the mean bonding length, number of layers per each nanowire size was found to be as 230, 104, 65 and 37 for the diameters mentioned above, respectively. Lattice dislocations in 22 nm diameter wire were found to be from 0.00324 nm for the 1st central lattice to 0.2579 nm for the last surface lattice. Such dislocation was smaller for larger wire diameters. Dislocation concentration found to change in Si nanowires according to the proportionalities of surface thickness to nanowire radius ratios.

  2. Current–voltage studies on -FeSi2/Si heterojunction

    Indian Academy of Sciences (India)

    A Datta; S Kal; S Basu

    2000-08-01

    – characteristics of both -FeSi2/n-Si and -FeSi2/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied. – studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

  3. Effect of Si interface surface roughness to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor

    Energy Technology Data Exchange (ETDEWEB)

    Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru [Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Nandiyanto, Asep Bayu Dani [Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Murakami, Hideki [Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Khairrurijal [Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)

    2016-02-08

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  4. Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  5. Influence of Li2Sb Additions on Microstructure and Mechanical Properties of Al-20Mg2Si Alloy

    Directory of Open Access Journals (Sweden)

    Hong-Chen Yu

    2016-03-01

    Full Text Available It is found that Li2Sb compound can act as the nucleus of primary Mg2Si during solidification, by which the particle size of primary Mg2Si decreased from ~300 to ~15–25 μm. Owing to the synergistic effect of the Li2Sb nucleus and adsorption-poisoning of Li atoms, the effect of complex modification of Li-Sb on primary Mg2Si was better than that of single modification of Li or Sb. When Li-Sb content increased from 0 to 0.2 and further to 0.5 wt.%, coarse dendrite changed to defective truncated octahedron and finally to perfect truncated octahedral shape. With the addition of Li and Sb, ultimate compression strength (UCS of Al-20Mg2Si alloys increased from ~283 to ~341 MPa and the yield strength (YS at 0.2% offset increased from ~112 to ~179 MPa while almost no change was seen in the uniform elongation. Our study offers a simple method to control the morphology and size of primary Mg2Si, which will inspire developing new Al-Mg-Si alloys with improved mechanical properties.

  6. Primary Considerations for Primary TEFL in China

    Institute of Scientific and Technical Information of China (English)

    Yvonne Griffiths

    2007-01-01

    This article will focus on five key areas relating to Primary TEFL in China. Firstly, the real TEFL context in Chinese primary schools will be discussed in terms of its special characteristics. Secondly, the current methodological approach will be examined from both a theoretical perspective, focusing on government (MOE) policy for primary TEFL, and a practical perspective, based on personal observations of classroom practice. The third section of the article will highlight some perceived shortcomings of current practice, while the fourth will outline the actual needs of primary learners in the Chinese educational system. Finally, the question of how teachers can meet these needs will be examined in relation to: methodological integration;integration of skills and sub-skills teaching/learning; and the exploitation of materials and activities to provide learners with three different types of language input and output opportunities (extensive, intensive and analysed: Swan, 2006).

  7. Complexation of Si in Hydrothermal Systems

    Institute of Scientific and Technical Information of China (English)

    樊文苓; 王声远; 田弋夫; 陈紫新

    2001-01-01

    The Au-SiO2 and Sn-SiO2 complexes have been experimentally calibrated at varying temperature, silica concentration and pH:Au+ + H3SiO4-=AuH3SiO4 lgK = - 1. 65436 + 9611.21/TSn4 + + 4H3SiO4-=Sn(H3SiO4)4 lgK200℃ = 42.73Compared with Au-Cl, Au-HS and Sn-OH complexes, AuH3SiO4 and Sn(H3SiO4)4 complexes can be recognized as the dominant transport forms in Si-bearing solutions under pH and Eh con ditions of general interest. The decrease of SiO2 concentration and oxygen fugacity would re verse the direction of dissolution-complexing reactions, resulting in the precipitation of gold and silica, as well as cassiterite and silica. This study illustrates the significance of SiO2-complexa tion in hydrothermal solutions for gold, tin and other metallizations.

  8. Comparison of the thermal stabilities of NiSi films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si systems

    CERN Document Server

    Wang, R N

    2003-01-01

    The effects of different interlayer materials (Pd and Pt) deposited between Ni films and Si substrates on the NiSi thermal stability are discussed. Ni sub 0 sub . sub 9 sub 4 sub 3 Pd sub 0 sub . sub 0 sub 5 sub 7 Si and Ni sub 0 sub . sub 9 sub 4 sub 5 Pt sub 0 sub . sub 0 sub 5 sub 5 Si solid solutions were formed when the samples were annealed at high temperatures and the lattice parameters of Ni sub 0 sub . sub 9 sub 4 sub 3 Pd sub 0 sub . sub 0 sub 5 sub 7 Si were calculated according to Vegard's law. The NiSi thermal stability was enhanced by interposing a Pd or Pt interlayer, and the sample with the Pt interlayer had the highest NiSi thermal stability among all the samples studied. This is attributed to the reduction of the interface energy between NiSi and Si substrates and the decrease of the driving force for the nucleation of NiSi sub 2 , induced by formation of the NiSi(200) preferred orientation and the solid solution respectively.

  9. Brain tumor - primary - adults

    Science.gov (United States)

    ... Vestibular schwannoma (acoustic neuroma) - adults; Meningioma - adults; Cancer - brain tumor (adults) ... Primary brain tumors include any tumor that starts in the brain. Primary brain tumors can start from brain cells, ...

  10. Cryogenic Characterization of the FBK NUV-HD SiPMs

    CERN Document Server

    Acerbi, Fabio; Ferri, Alessandro; Galbiati, Cristiano; Giovanetti, Graham; Gola, Alberto; Korga, George; Mandarano, Andrea; Marcante, Marco; Paternoster, Giovanni; Piemonte, Claudio; Razeto, Alessandro; Regazzoni, Veronica; Sablone, Davide; Savarese, Claudio; Zappalá, Gaetano; Zorzi, Nicola

    2016-01-01

    We report on the characterization of the NUV-HD SiPMs developed at FBK at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noises of the SiPMs between 40 and 300 K. Moreover a specific analysis program in conjunction with an ad-hoc data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to 7 orders of magnitude between room temperature and 40 K. We proved that it is possible to operate the FBK NUV-HD SiPMs at temperatures lower than 100 K with a dark noise below 0.01 cps/mm$^2$ and total correlated noise below 35% at 6 V of over-voltage. These results are relevant for the development of future cryogenic particle detector based with SiPMs as photosensors.

  11. Microstructure and properties of Ti-rich Ti-Si-Ge-Al alloys

    Energy Technology Data Exchange (ETDEWEB)

    Bulanova, M.; Tretyachenko, L.; Golovkova, M.; Soroka, A. [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Problem Materialovedeniya

    1998-11-01

    Using differential thermal analysis, X-ray diffraction, microscopy and electron microprobe, phase equilibria in the Ti-rich corner of the Ti-Si-Ge-Al system were studied. Projections of the solidus and liquidus surfaces were constructed. At the solidus temperatures Ti{sub 5}(Si,Ge,Al){sub 3} (Z) phase coexists with left angle {beta}-Ti right angle -based solid solution ({beta}), resulting in a wide two-phase {beta} + Z region. The solidus surface has a temperature maximum at 1540 C for 70Ti-5Si-5Ge-20Al. The isopleth at 5 at.% Si + 5 at.% Ge is given. The liquidus surface is characterised by the bivariant eutectic surface L <=> {beta} + Z. Microhardness of the primary phases, corresponding to the boundaries of the homogeneity ranges, and eutectic mixtures was measured. Partial substitution of silicon for germanium does neither change the character of the phase equilibria nor the temperatures of phase transformations. (orig.) 9 refs.

  12. Theoretic Study on Band Structure of Si/SiNx Multilayer Film%Si/SiNx多层膜能带结构的理论研究

    Institute of Scientific and Technical Information of China (English)

    徐明; 魏屹; 何贤模; 芦伟

    2010-01-01

    利用Kronig-Penney模型计算了Si/SiNx多层膜结构中Si亚层的能带结构.结果表明,无论是减少Si或Si/SiNx亚层的厚度都将导致Si层的带隙发生宽化,计算结果与实验值符合较好.进而还发现,当Si层厚度减小时,Si/SiNx多层膜结构中载流子(电子和空穴)的有效质量均减小,有利于对载流子复合发光的控制.计算结果对实验上研究发光可控的Si/SiNx多层膜结构有重要指导意义.

  13. Differential cross sections measurement of 28Si(p,p/γ)28Si and 29Si(p,p/γ)29Si reactions for PIGE applications

    Science.gov (United States)

    Jokar, A.; Kakuee, O.; Lamehi-Rachti, M.

    2016-03-01

    Differential cross sections for gamma-ray emission from the 28Si(p,p/γ)28Si (Eγ = 1779 keV) and the 29Si(p,p/γ)29Si (Eγ = 1273 keV) nuclear reactions were measured in the energy range of 2.0-3.2 MeV and 2.0-3.0 MeV, respectively. The thin Si targets were prepared by evaporating natural SiO onto self-supporting Ag films. The gamma-rays and backscattered protons were detected simultaneously. An HPGe detector placed at an angle of 90° with respect to beam direction was employed to collect gamma-rays while an ion implanted Si detector placed at a scattering angle of 165° was used to detect backscattered protons. The great advantage of this work is that differential cross sections were obtained with a procedure irrespective of absolute value of the collected beam charge.

  14. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xunming [University of Toledo; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  15. Mass Spectrometric Identification of Si-O-H(g) Species from the Reaction of Silica with Water Vapor at Atmospheric Pressure

    Science.gov (United States)

    Opila, Elizabeth J.; Fox, Dennis S.; Jacobson, Nathan S.

    1997-01-01

    A high-pressure sampling mass spectrometer was used to detect the volatile species formed from SiO2 at temperatures between 1200C and 1400C in a flowing water vapor/oxygen gas mixture at 1 bar total pressure. The primary vapor species identified was Si(OH)4. The fragment ion Si(OH)3+,' was observed in quantities 3 to 5 times larger than the parent ion Si(OH)4+. The Si(OH)3+ intensity was found to have a small temperature dependence and to increase with the water vapor partial pressure as expected. In addition, SiO(OH)+ believed to be a fragment of SiO(OH)2, was observed. These mass spectral results were compared to the behavior of silicon halides.

  16. Primary Hyperparathyroidism: An Overview

    OpenAIRE

    Jessica MacKenzie-Feder; Sandra Sirrs; Donald Anderson; Jibran Sharif; Aneal Khan

    2011-01-01

    Primary hyperparathyroidism is a common condition that affects 0.3% of the general population. Primary and tertiary care specialists can encounter patients with primary hyperparathyroidism, and prompt recognition and treatment can greatly reduce morbidity and mortality from this disease. In this paper we will review the basic physiology of calcium homeostasis and then consider genetic associations as well as common etiologies and presentations of primary hyperparathyroidism. We will consider...

  17. Primary Meningeal Rhabdomyosarcoma

    OpenAIRE

    2011-01-01

    Primary meningeal rhabdomyosarcoma is a rare primary brain malignancy, with scant case reports. While most reports of primary intracranial rhabdomyosarcoma occur in pediatric patients, a handful of cases in adult patients have been reported in the medical literature. We report the case of a 44-year-old male who developed primary meningeal rhabdomyosarcoma. After developing episodes of right lower extremity weakness, word finding difficulty, and headaches, a brain magnetic resonance imagin...

  18. Evaluation of damage accumulation behavior and strength anisotropy of NITE SiC/SiC composites by acoustic emission, digital image correlation and electrical resistivity monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan); Ozawa, Kazumi [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan); Asakura, Yuuki; Kohyama, Akira [Muroran Institute of Technology, Muroran, Hokkaido (Japan); Tanigawa, Hiroyasu [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan)

    2014-12-15

    Understanding the cracking process of the composites is essential to establish the design basis for practical applications. This study aims to investigate the damage accumulation process and its anisotropy for nano-infiltration transient eutectic sintered (NITE) SiC/SiC composites by various characterization techniques such as the acoustic emission (AE), digital image correlation (DIC) and electrical resistivity (ER) measurements. Cracking behavior below the proportional limit stress (PLS) was specifically addressed. Similar to the other generic SiC/SiC composites, the 1st AE event was identified below the PLS for NITE SiC/SiC composites with a dependency of fabric orientation. The DIC results support that the primary failure mode depending on fiber orientation affected more than the other minor modes did. Detailed AE waveform analysis by wavelet shows a potential to classify the failure behavior depending on architecture. Cracking below the PLS is a potential concern in component deign but the preliminary ER measurements imply that the impact of cracking below the PLS on composite function was limited.

  19. Enhancement of the Si p-n diode NIR photoresponse by embedding [beta]-FeSi2 nanocrystallites

    National Research Council Canada - National Science Library

    A V Shevlyagin; D L Goroshko; E A Chusovitin; K N Galkin; N G Galkin; A K Gutakovskii

    2015-01-01

    ...+ -Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes...

  20. Microstructure of AlSi17Cu5 alloy after overheating over liquidus temperature

    Directory of Open Access Journals (Sweden)

    J. Piątkowski

    2015-01-01

    Full Text Available The paper presents microstructure tests of alloy AlSi17Cu5. In order to disintegrate the primary grain of silicon the so-called time-temperature transformation TTT was applied which was based on overheating the liquid alloy way over the temperature Tliq., soaking in it for 30 minutes and casting it to a casting mould. It was found that such process causes the achievement of fine-crystalline structure and primary silicon crystals take up the form of pentahedra or frustums of pyramids. With the use of X-ray microanalysis and X-ray diffraction analysis the presence of intermetallic phases Al2Cu, Al4Cu9 which are the ingredients of eutectics α - AlCu - β and phase Al9Fe2Si which is a part of eutectic α - AlFeSi - β was confirmed.

  1. Amplitude and timing properties of a Geiger discharge in a SiPM cell

    Science.gov (United States)

    Popova, E.; Buzhan, P.; Pleshko, A.; Vinogradov, S.; Stifutkin, A.; Ilyin, A.; Besson, D.; Mirzoyan, R.

    2015-07-01

    The amplitude and timing properties of a Geiger discharge in a stand-alone SiPM cell have been investigated in detail. Use of a single stand-alone SiPM cell allows us to perform measurements with better accuracy than the multicell structure of conventional SiPMs. We have studied the dependence of the output charge and amplitude from an SiPM cell illuminated by focused light vs the number of primary photoelectrons. We propose a SPICE model which explains the amplitude over saturation (when the SiPM's amplitude is greater than the sum over all cells) characteristics of SiPM signals for more than one initial photoelectrons. The time resolutions of a SiPM cell have been measured for the case of single (SPTR) and multiphoton light pulses. The Full Width Half Max (FWHM) for SPTR has been found to be at the level of 30 ps for focused and 40 ps for unfocused light (100 μm cell size).

  2. Deformation effects in the 28Si + 12C and 28Si + 28Si reactions

    Indian Academy of Sciences (India)

    C Bhattacharya; M Rousseau; C Beck; V Rauch; R M Freeman; R Nouicer; F Haas; O Dorvaux; K Eddahbi; P Papka; O Stezwski; S Szilner; D Mahboub; A Szanto De Toledo; A Hachem; E Martin; S J Sanders

    2001-07-01

    The possible occurrence of highly deformed configurations is investigated in the 40Ca and 56Ni di-nuclear systems as formed in the 28Si + 12C, 28Si reactions by using the properties of emitted light charged particles. Inclusive as well as exclusive data of the heavy fragments and their associated light charged particles have been collected by using the ICARE charged particle multidetector array. The data are analysed by Monte Carlo CASCADE statistical-model calculations using a consistent set of parameters with spin-dependent level densities. Significant deformation effects at high spin are observed as well as an unexpected large 8Be cluster emission of a binary nature.

  3. Primary Care's Dim Prognosis

    Science.gov (United States)

    Alper, Philip R.

    2010-01-01

    Given the chorus of approval for primary care emanating from every party to the health reform debate, one might suppose that the future for primary physicians is bright. Yet this is far from certain. And when one looks to history and recognizes that primary care medicine has failed virtually every conceivable market test in recent years, its…

  4. Investigating Primary Source Literacy

    Science.gov (United States)

    Archer, Joanne; Hanlon, Ann M.; Levine, Jennie A.

    2009-01-01

    Primary source research requires students to acquire specialized research skills. This paper presents results from a user study testing the effectiveness of a Web guide designed to convey the concepts behind "primary source literacy". The study also evaluated students' strengths and weaknesses when conducting primary source research. (Contains 3…

  5. Corrosion properties of amorphous Mo-Si-N and nanolayered Mo-Si-Nn/SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Torri, P.; Mahiout, A.; Koskinen, J.; Hirvonen, J.P.; Johansson, L.S.

    2000-02-01

    Corrosion properties of sputter deposited MoSi{sub 2}, SiC, Mo-Si-N (MoSi{sub 2.2}N{sub 2.5}) and nanolayered Mo-Si-N/SiC coatings on Fe37 low carbon steel have been studied using electrochemical polarization measurements in 1 N H{sub 2}SO{sub 4} solution. A decrease in both critical current density for passivation and minimum current in passive state was observed in annealed nanolayered Mo-Si-N/SiC coating compared to each of its constituents alone as single layer coating. On contrary to MoSi{sub 2} coating, only slight increase in critical current density was observed in Mo-Si-N coated sample after annealing. Molybdenum disilicide source material has good thermal and electrical conductivity, which allows effective dc-magnetron sputter deposition. Therefore this is a relatively simple method to produce amorphous coatings which have a high crystallization temperature and promising properties for corrosion applications.

  6. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  7. GeSn/Si Avalanche Photodetectors on Si substrates

    Science.gov (United States)

    2016-09-16

    Photodetectors on Si substrates Report Title In this project, firstly, the material growth of GeSn by chemical vapor deposition (CVD) system has been...between GeSn and other market dominating IR detectors in short-IR wavelength (First time reported the D* of a GeSn detector in the world). The D* of...Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 Final Report W911NF-13-1-0196 64461-EL-DRP.43 479-575-7265 a. REPORT 14. ABSTRACT 16

  8. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  9. Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

    Science.gov (United States)

    Li, Can; Han, Lili; Jiang, Hao; Jang, Moon-Hyung; Lin, Peng; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

    2017-06-01

    Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (105 rectifying ratio, 104 ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.

  10. High-efficiency si/polymer hybrid solar cells based on synergistic surface texturing of Si nanowires on pyramids.

    Science.gov (United States)

    He, Lining; Lai, Donny; Wang, Hao; Jiang, Changyun; Rusli

    2012-06-11

    An efficient Si/PEDOT:PSS hybrid solar cell using synergistic surface texturing of Si nanowires (SiNWs) on pyramids is demonstrated. A power conversion efficiency (PCE) of 9.9% is achieved from the cells using the SiNW/pyramid binary structure, which is much higher than similar cells based on planar Si, pyramid-textured Si, and SiNWs. The PCE is the highest reported to-date for hybrid cells based on Si nanostructures and PEDOT.

  11. PREPARATION OF SEMI-SOLID AlSi7Mg ALLOY SLURRY

    Institute of Scientific and Technical Information of China (English)

    Z.D. Zhao; W.M. Mao

    2008-01-01

    In this article, semi-solid AlSi7Mg alloy slurry was prepared by low superheat pouring and weak electromagnetic stirring. The effects of pouring temperature and stirring power on the microstructure of the AlSi7Mg alloy slurry were studied. The results showed that the semi-solid AlSi7Mg alloy slurry, 127 mm in diameter, could be prepared by using the low superheat pouring and weak electromagnetic stirring technology and this new technology could save energy and make the pouring process convenient. When the liquid AlSi7Mg alloy was poured at 650°C or 630°C, the solidified microstructure of the AlSi7Mg alloy slurry, prepared by weak electromagnetic stirring, was remarkably improved when compared with that of the slurry prepared without stirring. The primary α-Al grains appeared rosette-like or spherical. When the pouring temperature was decreased, the shape of the primary α-Al grains gradually changed from dendritic-like grains to spherical grains. When the pouring temperature was appropriately increased, that is, raised to a certain superheat, the pouring processbecame easier and an ideal spherical microstructure of the AlSiTMg alloy slurry, prepared by weak electromagnetic stirring, could also be obtained. In this experiment,when the stirring power was 0.36 kW, the optimized pouring temperature parameter was 630°C. When the AISiTMg alloy slurry was prepared by low superheat pouring and weak electromagnetic stirring, the pouring temperature was 630°C. Increasing the stirring power appropriately could gain better spherical primary α-Al grains, but if the stirring power was increased to a certain value, the shape of the primary α-Al grains did not improve further. In this experiment, the optimized stirring power parameter was 0.36 kW.

  12. Corrosion and protection of heterogeneous cast Al-Si (356) and Al-Si-Cu-Fe (380) alloys by chromate adn cerium inhibitors

    Science.gov (United States)

    Jain, Syadwad

    In this study, the localized corrosion and conversion coating on cast alloys 356 (Al-7.0Si-0.3Mg) and 380 (Al-8.5Si-3.5Cu-1.6Fe) were characterized. The intermetallic phases presence in the permanent mold cast alloy 356 are primary-Si, Al5FeSi, Al8Si6Mg3Fe and Mg2Si. The die cast alloy 380 is rich in Cu and Fe elements. These alloying elements result in formation of the intermetallic phases Al 5FeSi, Al2Cu and Al(FeCuCr) along with primary-Si. The Cu- and Fe-rich IMPS are cathodic with respect to the matrix phase and strongly govern the corrosion behavior of the two cast alloys in an aggressive environment due to formation of local electrochemical cell in their vicinity. Results have shown that corrosion behavior of permanent mould cast alloy 356 is significantly better than the die cast aluminum alloy 380, primarily due to high content of Cu- and Fe-rich phases such as Al2Cu and Al 5FeSi in the latter. The IMPS also alter the protection mechanism of the cast alloys in the presence of inhibitors in an environment. The presence of chromate in the solution results in reduced cathodic activity on all the phases. Chromate provides some anodic inhibition by increasing pitting potentials and altering corrosion potentials for the phases. Results have shown that performance of CCC was much better on 356 than on 380, primarily due to inhomogeneous and incomplete coating deposition on Cu- and Fe- phases present in alloy 380. XPS and Raman were used to characterize coating deposition on intermetallics. Results show evidence of cyanide complex formation on the intermetallic phases. The presence of this complex is speculated to locally suppress CCC formation. Formation and breakdown of cerium conversion coatings on 356 and 380 was also analyzed. Results showed that deposition of cerium hydroxide started with heavy precipitation on intermetallic particles with the coatings growing outwards onto the matrix. Electrochemical analysis of synthesized intermetallics compounds in the

  13. Primary Hyperparathyroidism: An Overview

    Directory of Open Access Journals (Sweden)

    Jessica MacKenzie-Feder

    2011-01-01

    Full Text Available Primary hyperparathyroidism is a common condition that affects 0.3% of the general population. Primary and tertiary care specialists can encounter patients with primary hyperparathyroidism, and prompt recognition and treatment can greatly reduce morbidity and mortality from this disease. In this paper we will review the basic physiology of calcium homeostasis and then consider genetic associations as well as common etiologies and presentations of primary hyperparathyroidism. We will consider emerging trends in detection and measurement of parathyroid hormone as well as available imaging modalities for the parathyroid glands. Surgical indications and approach will be reviewed as well as medical management of primary hyperparathyroidism with bisphosphonates and calcimimetics.

  14. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

    Institute of Scientific and Technical Information of China (English)

    Hu Yuehui; Zhang Xiangwen; Qu Minghao; Wang Lifu; Zeng Tao; Xie Yaojiang

    2009-01-01

    In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.

  15. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  16. Microstructures and Properties of Ti-Coated SiCp Reinforced Al-Si Alloy Composites

    Science.gov (United States)

    Feng, Yan; Ren, Junpeng; Dong, Cuige; Wang, Richu

    2016-12-01

    A double-layer structure of Ti coating was plated on the surface of SiC particles using a diffusion method in a vacuum reactor, which is a new method to fabricate a Ti-coating layer on the SiC particles. The phase structure of Ti coating on the surface of SiC particles was composed inside of Ti5Si3 and outside of TiC investigated by x-ray diffraction. The Ti5Si3 and TiC double-layer structure realizes the tight chemical bonding between SiC particles and the Ti coating, and significantly promotes the wettability between the aluminum matrix and the Ti-coated SiC particles. The Ti-coated SiCp-reinforced Al-Si composites are prepared by a powder metallurgy method, and express excellent relative densities, desirable mechanical properties and frictional wear resistance.

  17. Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

    Science.gov (United States)

    Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

    2013-09-01

    Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures.

  18. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  19. From Si wafers to cheap and efficient Si electrodes for Li-ion batteries

    Science.gov (United States)

    Gauthier, Magali; Reyter, David; Mazouzi, Driss; Moreau, Philippe; Guyomard, Dominique; Lestriez, Bernard; Roué, Lionel

    2014-06-01

    High-energy ball milling is used to recycle Si wafers to produce Si powders for negative electrodes of Li-ion batteries. The resulting Si powder consists in micrometric Si agglomerates made of cold-welded submicrometric nanocrystalline Si particles. Silicon-based composite electrodes prepared with ball-milled Si wafer can achieve more than 900 cycles with a capacity of 1200 mAh g-1 of Si (880 mAh g-1 of electrode) and a coulombic efficiency higher than 99%. This excellent electrochemical performance lies in the use of nanostructured Si produced by ball milling, the electrode formulation in a pH 3 buffer solution with CMC as binder and the use of FEC/VC additives in the electrolyte. This work opens the way to an economically attractive recycling of Si wastes.

  20. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    Science.gov (United States)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  1. Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

    Institute of Scientific and Technical Information of China (English)

    Wentao HUANG; Jilin WANG; Zhinong LIU; Peiyi CHEN; Peihsin TSIEN; Xiangti MENG

    2004-01-01

    The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gainβ decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well asβ decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation ofβ for both SiGeHBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

  2. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Joongoo; Park, Ji-Sang; Stradins, Pauls; Wei, Su-Huai

    2017-07-01

    Nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si2AlP (or Si2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and optical properties of the nonisovalent alloys.

  3. Study of indentation induced cracks in MoSi2-reaction bonded SiC ceramics

    Indian Academy of Sciences (India)

    O P Chakrabarti; P K Das; S Mondal

    2001-04-01

    MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker’s indenter and KIC was found to be 4.42 MPa√m which is around 39% higher than the conventional RBSC material. Enhancement in indentation fracture toughness is explained in terms of bowing of propagating cracks through MoSi2/SiC interface which is under high thermal stress arising from the thermal expansion mismatch between MoSi2 and SiC.

  4. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  5. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by in situ reaction synthesis of TiC/Si/Al powders

    Indian Academy of Sciences (India)

    Baoyan Liang; Mingzhi Wang; Xiaopu Li; Yunchao Mu

    2011-12-01

    The microstructure and mechanical properties of Ti3SiC2–SiC nanocomposite fabricated by in situ hot pressing (HP) synthesis process were studied. The results show that dense Ti3SiC2–SiC composite contained minor TiSi2 obtained by hot sintering at 1350°C for 1 h. The average grain size of Ti3SiC2 was 4 m in length, and the size of SiC grains is about 100 nm. With its fine microstructure, the Ti3SiC2–SiC nanocomposite shows good mechanical properties.

  6. Si3N4/SiC nanocomposite powder from a preceramic polymeric network based on poly(methylsilane as the SiC precursor

    Directory of Open Access Journals (Sweden)

    Maurício F. Gozzi

    2001-01-01

    Full Text Available Si3N4/SiC nanocomposite powders were obtained from a preceramic polymeric network based on poly(methylsilane as the in situ quasi-stoichiometric SiC source. These powders were constituted of nanosized SiC particles homogeneously distributed in the Si3N4 particulate matrix. beta-SiC whiskers were grown at 1400 °C in the pores of the matrix. At 1600 °C, the alpha -> beta Si3N4 phase transition took place, but no elemental silicon from Si3N4 decomposition was detected, evidencing the protective effect of the SiC phase.

  7. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  8. Photoluminescence and structural properties of Si/SiC core–shell nanowires growth by HWCVD

    Energy Technology Data Exchange (ETDEWEB)

    Nazarudin, Nur Fatin Farhanah Binti; Mohd Noor, Nurul Jannah Binti; Rahman, Saadah Abdul; Goh, Boon Tong, E-mail: boontong77@yahoo.com

    2015-01-15

    Si/SiC core–shell nanowires grown by hot-wire chemical vapor deposition were studied. Ni nanoparticles act as metal nano-templates to catalyze the growth of these core–shell nanowires. These nanowires were grown at different deposition pressures of 0.5 and 1 mbar. The nanowires showed a tapered-like morphology at deposition pressure 0.5 mbar. Increase in pressure to 1 mbar leads to a formation of agglomerated grains at the root of the nanowires. The results show that these nanowires consisted of crystalline Si core and amorphous SiC shell nanowires. Increase in pressure enhanced the formation of SiC phase in the shell of the nanowires. On the other hand, the formation of the agglomerated grains attributed to an increasing of the SiC phase at higher deposition pressure. The presence of Si and SiC nano-crystallites embedded within an amorphous matrix exhibited a room temperature PL emission in the range of 400–1000 nm. The effects of the deposition pressure on the optical and structural properties of the nanowires are also discussed. - Highlights: • Growth of Si/SiC core–shell nanowires by HWCVD. • The nanowires consisted of crystalline Si core and amorphous SiC shell. • Metal nano-templates catalyzed the growth of Si core nanowires. • Increase in deposition pressure enhanced the SiC phase. • The presence of nano-crystallites exhibited a room temperature PL.

  9. Resonance Raman mapping as a tool to monitor and manipulate Si nanocrystals in Si-SiO{sub 2} nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Ekta; Ingale, Alka A., E-mail: alka@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Chaturvedi, A. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Joshi, M. P.; Kukreja, L. M. [Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2015-10-19

    Specially designed laser heating experiment along with Raman mapping on Si-SiO{sub 2} nanocomposites elucidates the contribution of core and surface/interface in the intermediate frequency range (511–514 cm{sup −1}) Si phonons. The contribution of core to surface/interface increases with the size of Si nanocrystal, which itself increases on laser irradiation. Further, it is found that resonance Raman is crucial to the observance of surface/interface phonons and wavelength dependent Raman mapping can be corroborated with band edges observed in absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO{sub 2} nanocomposite, simultaneously for photovoltaic device applications.

  10. Airborne Emissions from Si/FeSi Production

    Science.gov (United States)

    Kero, Ida; Grådahl, Svend; Tranell, Gabriella

    2017-02-01

    The management of airborne emissions from silicon and ferrosilicon production is, in many ways, similar to the management of airborne emissions from other metallurgical industries, but certain challenges are highly branch-specific, for example the dust types generated and the management of NO X emissions by furnace design and operation. A major difficulty in the mission to reduce emissions is that information about emission types and sources as well as abatement and measurement methods is often scarce, incomplete and scattered. The sheer diversity and complexity of the subject presents a hurdle, especially for new professionals in the field. This article focuses on the airborne emissions from Si and FeSi production, including greenhouse gases, nitrogen oxides, airborne particulate matter also known as dust, polyaromatic hydrocarbons and heavy metals. The aim is to summarize current knowledge in a state-of-the-art overview intended to introduce fresh industry engineers and academic researchers to the technological aspects relevant to the reduction of airborne emissions.

  11. Impact Resistance of Uncoated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded: At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained approx.50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing.

  12. Airborne Emissions from Si/FeSi Production

    Science.gov (United States)

    Kero, Ida; Grådahl, Svend; Tranell, Gabriella

    2016-10-01

    The management of airborne emissions from silicon and ferrosilicon production is, in many ways, similar to the management of airborne emissions from other metallurgical industries, but certain challenges are highly branch-specific, for example the dust types generated and the management of NO X emissions by furnace design and operation. A major difficulty in the mission to reduce emissions is that information about emission types and sources as well as abatement and measurement methods is often scarce, incomplete and scattered. The sheer diversity and complexity of the subject presents a hurdle, especially for new professionals in the field. This article focuses on the airborne emissions from Si and FeSi production, including greenhouse gases, nitrogen oxides, airborne particulate matter also known as dust, polyaromatic hydrocarbons and heavy metals. The aim is to summarize current knowledge in a state-of-the-art overview intended to introduce fresh industry engineers and academic researchers to the technological aspects relevant to the reduction of airborne emissions.

  13. Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

    Science.gov (United States)

    Shaban, Mahmoud; Bayoumi, Amr M.; Farouk, Doaa; Saleh, Mohamed B.; Yoshitake, Tsuyoshi

    2016-09-01

    In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm-3 eV-1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

  14. In-Plane Si Nanowire Growth Mechanism in Absence of External Si Flux.

    Science.gov (United States)

    Curiotto, Stefano; Leroy, Frédéric; Cheynis, Fabien; Müller, Pierre

    2015-07-01

    We report on a new mechanism of nanowire formation: during Au deposition on Si(110) substrates, Au-Si droplets grow, move spontaneously, and fabricate a Si nanowire behind them in the absence of Si external flux. Nanowires are formed by Si dissolved from the substrate at the advancing front of the droplets and transported backward to the crystallization front. The droplet shape is determined by the Si etching anisotropy. The nanowire formation can be tuned by changing experimental parameters like substrate temperature and Au deposition rate.

  15. Si/SiO2/p-Si结构的电学特性

    Institute of Scientific and Technical Information of China (English)

    马自军; 马书懿

    2008-01-01

    用射频磁控溅射法在p-Si衬底上制备了Si/SiO2薄膜,利用Au/(Si/SiO2)/p-Si结构的I-V特性曲线对其电学特性进行了分析.结果表明,样品具有很好的整流作用,起整流作用的势垒存在于(Si/SiO2)/p-Si界面附近.

  16. Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

    Institute of Scientific and Technical Information of China (English)

    XIA Zheng-Yue; HAN Pei-Gao; XU Jun; CHEN De-Yuan; WEI De-Yuan; MA Zhong-Yuan; CHEN Kun-Ji; XU Ling; HUANG Xin-Fan

    2007-01-01

    Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures.The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.

  17. 非晶硅/晶体硅(a-Si/c-Si)异质结%Property Investigation of a-Si/c-Si Hetero-Junction Structure

    Institute of Scientific and Technical Information of China (English)

    汪建强; 高华; 张剑; 张松; 李晨; 叶庆好; 孟凡英

    2011-01-01

    通过对非晶硅/晶体硅(a-Si/c-Si)异质结能带不连续、发射结掺杂以及界面态密度进行分析,研究它们对a-Si/c-Si异质结的界面特性,以及a-Si(N+)/c-Si(P)结构电池性能的影响.研究发现,能带不连续以及a-Si发射结高掺杂有利于实现界面复合机制由以悬挂键复合主导的复合机制向由少数载流子复合占主导的SRH(Shockly-Read-Hall)复合机制转变,有效降低界面复合速率.AFORS-HET软件模拟显示:在c-Si(P)衬底掺杂浓度为1.6×1016cm-3时,a-Si(N+)发射结掺杂浓度大于1.5×1020cm-3是获得高电池效率的必要条件;与短路电流密度相比,开路电压受a-Si/c-Si界面态密度影响更明显.%T his paper investigated the influence ot a-hi/c-bi band ottset, amorphous silicon emitter doping concentration and interface defects density on interface property of a-Si/c-Si structure. Band offset in a-Si(N+ )/c-Si(P) hetero-junction and a-Si emitter high level doping is very useful for the transformation of recombination mechanism from dangling bond to SRH (Shockly-Read-Hall). AFORS-HET simulation indicates that a-Si(N+ ) emitter doping level of over 1. 5X1020 cm~3 on c-Si(P) is an indispensable condition for achieving high efficiency. Comparing with density of short circuit current, open circuit voltage of a-Si/c-Si structure cell is much more susceptible to interface defect density.

  18. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    Energy Technology Data Exchange (ETDEWEB)

    Hunn, John D., E-mail: hunnjd@ornl.gov [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M. [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A. [Idaho National Laboratory (INL), P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2016-09-15

    Highlights: • Cesium release was used to detect SiC failure in HTGR fuel. • Tristructural-isotropic particles with SiC failure were isolated by gamma screening. • SiC failure was studied by X-ray tomography and SEM. • SiC degradation was observed after irradiation and subsequent safety testing. - Abstract: As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of {sup 134}Cs and {sup 137}Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were

  19. Global Biogeochemical Cycle of Si: Its Coupling to the Perturbed C-N-P cycles in Industrial Time

    Science.gov (United States)

    Lerman, A.; Li, D. D.; MacKenzie, F. T.

    2010-12-01

    The importance of silicon (Si) in global biogeochemical cycles is demonstrated by its abundance in the land and aquatic biomass, where Si/C is 0.02 in land plants and 0.15 in marine organisms. Estimates show that Si-bioproduction accounts for ~1.5% of terrestrial primary production, and ~4.5% in the coastal ocean. Human land-use activities have substantially changed regional patterns of vegetation distribution, soil conditions, and nutrient fluxes via runoff to the coastal ocean. Anthropogenic chemical fertilization of the land has caused a significant increase in fluvial nitrogen (N) and phosphorus (P) transport, whereas land-use and vegetation mass changes have caused variations in the riverine Si input, all eventually affecting the cycling of nutrients in the marine environment. We developed a global biogeochemical model of the Si cycle as coupled to the global C-N-P cycle model, TOTEM II (Terrestrial-Ocean-aTmosphere-Ecosystem-Model). In the model analysis from year 1700, taken as the start of the Anthropocene, to 2050, the bioproduction of Si on land and in the ocean is coupled to the bioproduction of C, perturbed by the atmospheric CO2 rise, land-use changes, and chemical fertilization. Also, temperature rise affects the Si cycling on land through bioproduction rates, terrestrial organic matter remineralization, and weathering, thereby affecting its delivery to the coastal zone. The results show that biouptake and subsequent release of Si on land strongly affect the Si river flux to the coastal ocean. During the 350-year period, Si river discharge has increased by ~10% until ~1940, decreasing since then to below its 1700 value and continuing to drop, under the current IPCC IS92 projections of CO2, temperature and other forcings. From 1700 to ~1950, land-use changes, associated with slash and burn of large areas of high-productivity land, caused a decrease of global land vegetation. Dissolution of Si in soil humus and weathering of silicate minerals are the

  20. Effect of Wavelike Sloping Plate Rheocasting on Microstructures of Hypereutectic Al-18 pct Si-5 pct Fe Alloys

    Science.gov (United States)

    Guan, Ren-Guo; Zhao, Zhan-Yong; Lee, Chong Soo; Zhang, Qiu-Sheng; Liu, Chun-Ming

    2012-04-01

    To refine and spheroidize the microstructures of hypereutectic Al-Si-Fe alloys, a novel method of wavelike sloping plate (WSP) rheocasting was proposed, and the effect of the WSP rheocasting on the microstructures of hypereutectic Al-18 pct Si-5 pct Fe alloys was investigated. The results reveal that the morphologies of the primary Si crystal, the Al18Si10Fe5, and the Al8Si2Fe phases can be improved by the WSP rheocasting, and various phases tend to be refined and spheroidized with the decrease of the casting temperature. The alloy ingots with excellent microstructures can be obtained when the casting temperature is between 943 K and 953 K (670 °C and 680 °C). During the WSP rheocasting, the crystal nucleus multiplication, inhibited grain growth, and dendrite break-up take place simultaneously, which leads to grain refinement of the alloys.

  1. Epitaxy of Si1- x C x via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors

    Science.gov (United States)

    Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

    2017-09-01

    In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1- x C x epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1- x C x epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1- x C x epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

  2. Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi [Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2012-07-15

    {beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

  3. SiC nanowires: material and devices

    Science.gov (United States)

    Zekentes, K.; Rogdakis, K.

    2011-04-01

    SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires' growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. SiC nanowires with narrow-diameter (channel material. On the other hand, the grown nanowires are suitable for field-emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in different sections of this paper.

  4. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures.

    Science.gov (United States)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-12-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  5. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures

    Science.gov (United States)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-06-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree ( ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  6. siRNA的应用

    Institute of Scientific and Technical Information of China (English)

    孟立根; 马清河; 王安忠; 秦俊文

    2004-01-01

    RNAi(RNA interference,RNA阻断)当初是在研究绦虫C elegans时观测到的一种现象。当将双链的RNA(double stranded RNA;dsRNA)导人体内后,与这种双链RNA相同性较高的mRNA将被特异性地抑制或者消除。除了绦虫之外,RNAi已被作为一种研究基因功能的有效工具,广泛运用于植物、真菌、线虫、果蝇以及哺乳动物,并获得了好的效果。近来使用短链(21~23碱基对)siRNA(short interfering RNA)也获得了同样的效果。siRNA与传统RNA干涉技术相比具有极大的优越

  7. SiLix-C Nanocomposites

    Science.gov (United States)

    Henry, Francois

    2015-01-01

    For this Phase II project, Superior Graphite Co., in collaboration with the Georgia Institute of Technology and Streamline Nanotechnologies, Inc., developed, explored the properties of, and demonstrated the enhanced capabilities of novel nanostructured SiLix-C anodes. These anodes can retain high capacity at a rapid 2-hour discharge rate and at 0 C when used in Li-ion batteries. In Phase I, these advanced anode materials had specific capacity in excess of 1,000 mAh/g, minimal irreversible capacity losses, and stable performance for 20 cycles at C/1. The goals in Phase II were to develop and apply a variety of novel nanomaterials, fine-tune the properties of composite particles at the nanoscale, optimize the composition of the anodes, and select appropriate binder and electrolytes. In order to achieve a breakthrough in power characteristics of Li-ion batteries, the team developed new nanostructured SiLix-C anode materials to offer up to 1,200 mAh/g at C/2 at 0 C.

  8. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  9. Graphene/Si-nanowire heterostructure molecular sensors

    Science.gov (United States)

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-06-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

  10. Si isotope homogeneity of the solar nebula

    Energy Technology Data Exchange (ETDEWEB)

    Pringle, Emily A.; Savage, Paul S.; Moynier, Frédéric [Department of Earth and Planetary Sciences and McDonnell Center for the Space Sciences, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130 (United States); Jackson, Matthew G. [Department of Earth Science, University of California, Santa Barbara, CA 93109 (United States); Barrat, Jean-Alix, E-mail: eapringle@wustl.edu, E-mail: savage@levee.wustl.edu, E-mail: pringle@ipgp.fr, E-mail: moynier@ipgp.fr, E-mail: jackson@geol.ucsb.edu, E-mail: Jean-Alix.Barrat@univ-brest.fr [Université Européenne de Bretagne, Université de Brest, CNRS UMR 6538 (Domaines Océaniques), I.U.E.M., Place Nicolas Copernic, F-29280 Plouzané Cedex (France)

    2013-12-20

    The presence or absence of variations in the mass-independent abundances of Si isotopes in bulk meteorites provides important clues concerning the evolution of the early solar system. No Si isotopic anomalies have been found within the level of analytical precision of 15 ppm in {sup 29}Si/{sup 28}Si across a wide range of inner solar system materials, including terrestrial basalts, chondrites, and achondrites. A possible exception is the angrites, which may exhibit small excesses of {sup 29}Si. However, the general absence of anomalies suggests that primitive meteorites and differentiated planetesimals formed in a reservoir that was isotopically homogenous with respect to Si. Furthermore, the lack of resolvable anomalies in the calcium-aluminum-rich inclusion measured here suggests that any nucleosynthetic anomalies in Si isotopes were erased through mixing in the solar nebula prior to the formation of refractory solids. The homogeneity exhibited by Si isotopes may have implications for the distribution of Mg isotopes in the solar nebula. Based on supernova nucleosynthetic yield calculations, the expected magnitude of heavy-isotope overabundance is larger for Si than for Mg, suggesting that any potential Mg heterogeneity, if present, exists below the 15 ppm level.

  11. The Si/Si_3N4 Interface and Si/Si_3N4 Submicron Mesa: A Multi-million Atom Molecular Dynamics Study

    Science.gov (United States)

    Bachlechner, Martina E.; Omeltchenko, Andrey; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjö, Ingvar; Madhukar, Anupam

    1998-03-01

    Using molecular dynamics simulations on parallel computers, the interface structure, stress distribution, crack propagation and fracture in a Si_3N4 film on Si substrate are studied. Bulk Si is described by Stillinger-Weber potential and Si_3N4 is represented by a combination of two- and three-body covalent interactions. At the interface, the charge transfer is taken from LCAO electronic structure calculations (G.-L. Zhao and M.E. Bachlechner, Europhys. Lett. 36, 287 (1997)). Results for structural correlations at the interface and 3D stress distribution for the submicron mesa are presented.

  12. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  13. Si3N4-SiC材料的氧化性能研究%Study on Oxidation Performance of Si3N4-SiC

    Institute of Scientific and Technical Information of China (English)

    李杰

    2009-01-01

    通过对不同Si3N4含量、不同温度下Si3N4-SiC材料的氧化实验,分析氧化后的氧化增重率,得出Si3N4含量越高,材料氧化越严重;氧化温度越高,材料氧化越严重;且氧化增重率与氧化时间呈直线-抛物线规律.

  14. Reconstruction and Quantitative Characterization of Multiphase, Multiscale Three-Dimensional Microstructure of a Cast Al-Si Base Alloy

    Science.gov (United States)

    Singh, H.; Gokhale, A. M.; Mao, Y.; Tewari, A.; Sachdev, A. K.

    2009-12-01

    The serial sectioning technique is well known for the reconstruction of three-dimensional (3D) microstructures of opaque materials. In recent years, techniques also have been developed for the reconstruction of high-fidelity, large-volume segments of 3D microstructures that use montage serial sections and robot-assisted automated acquisitions of montage serial sections. This article reports the reconstruction of the multiphase, multiscale 3D microstructure of a permanent mold cast unmodified Al-12 wt pct Si-1 wt pct Ni base alloy that contains eutectic Si platelets, coarse primary polyhedral Si particles, Fe-rich script intermetallic particles, and pores. These constituents are segmented, reconstructed, rendered, and characterized in three dimensions. The estimated 3D microstrucutral attributes include the distribution of eutectic platelet thickness; the mean volume, mean surface area, and mean thickness of the eutectic Si platelets; the mean volume and the mean surface area of the polyhedral primary Si particles; and the mean number of faces, edges, and corners on the polyhedral primary Si particles.

  15. Crystallization paths in SiO2-Al2O3-CaO system as a genotype of silicate materials

    Science.gov (United States)

    Lutsyk, V. I.; Zelenaya, A. E.

    2013-12-01

    The phases trajectories in the fields of primary crystallization of cristobalite (SiO2cr), tridymite (SiO2tr), mullite (3Al2O3-2SiO2) and in a field of liquid immiscibility are analyzed on a basis of computer model for T-x-y diagram of SiO2-Al2O3-CaO system. The concentration fields with unique set of microconstituents and the fields without individual crystallization schemes and microconstituents are revealed.

  16. One-dimensional Si nanolines in hydrogenated Si(001)

    Science.gov (United States)

    François, Bianco; Köster, Sigrun A.; Owen, James G. H.; Renner, Christoph; Bowler, David R.

    2012-02-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality. Phys. Rev. B, 84, 035328 (2011)

  17. PEGylated poly(ethylene imine) copolymer-delivered siRNA inhibits HIV replication in vitro.

    Science.gov (United States)

    Weber, Nick D; Merkel, Olivia M; Kissel, Thomas; Muñoz-Fernández, María Ángeles

    2012-01-10

    RNA interference is increasingly being utilized for the specific targeting and down-regulation of disease-causing genes, including targeting viral infections such as HIV. T lymphocytes, the primary target for HIV, are very difficult to treat with gene therapy applications such as RNA interference because of issues with drug delivery. To circumvent these problems, we investigated poly(ethylene imine) (PEI) as a method of improving transfection efficiency of siRNA to T lymphocytes. Additionally, polyethylene glycol (PEG) moieties were engrafted to the PEI polymers with the goals of improving stability and reducing cytotoxicity. Initial studies on PEG-PEI/siRNA polyplex formation, size and their interaction with cell membranes demonstrated their feasibility as drug delivery agents. Assays with lymphocytes revealed low cytotoxicity profiles of the polyplexes at pharmacologically relevant concentrations with PEGylated copolymers obtaining the best results. Successful transfection of a T cell line or primary T cells with siRNA was observed via flow cytometry and confocal microscopy. Finally, the biological effect of copolymer-delivered siRNA was measured. Of particular significance, siRNA targeted to the HIV gene nef and delivered by one of the PEG-PEI copolymers in repetitive treatments every 2-3 days was observed to inhibit HIV replication to the same extent as azidothymidine over the course of 15 days. Copyright © 2011 Elsevier B.V. All rights reserved.

  18. Primary Intraosseous Meningioma.

    Science.gov (United States)

    Chen, Thomas C

    2016-04-01

    Primary intraosseous meningiomas are a subtype of primary extradural meningiomas. They represent approximately two-thirds of extradural meningiomas and fewer than 2% of meningiomas overall. These tumors originate within the bones of the skull and can have a clinical presentation and radiographic differential diagnosis different from those for intradural meningiomas. Primary intraosseous meningiomas are classified based on location and histopathologic characteristics. Treatment is primarily surgical resection with wide margins if possible. Sparse literature exists regarding the use of adjuvant therapies. The literature regarding primary intraosseous meningiomas consists primarily of clinical case reports and case series. This literature is reviewed and summarized in this article.

  19. Hyperaldosteronism - primary and secondary

    Science.gov (United States)

    Primary and secondary hyperaldosteronism have common symptoms, including: High blood pressure High level of calcium in the blood Fatigue Headache Muscle weakness Numbness Paralysis that comes and goes

  20. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  1. Nature of visible luminescence of co-sputtered Si-SiO{sub x} systems

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.; Becerril Espinoza, F.G.; Goldstein, Y.; Savir, E.; Jedrzejewski, J.; Khomenkova, L.; Korsunska, N.; Yukhimchuk, V

    2003-12-31

    Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO{sub x} systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150 deg. C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30 eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiO{sub x} system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

  2. Optimization of Waveguide Structure for Tunable Optical Switch in Si/SiGe System

    Institute of Scientific and Technical Information of China (English)

    Seongjae Boo; Won-Taek Han

    2003-01-01

    A new electro-optical device using Si/SiGe-system with two parallel ridge waveguides is proposed for optical switching and the optimization of the structure for a single mode operation is investigated.

  3. Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET

    Institute of Scientific and Technical Information of China (English)

    Zhao Xiaofeng; Wen Dianzhong

    2009-01-01

    A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when V_(DS) = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor (MAGFET) with an L : W ratio of 2 : 1 is 21.26 mV/T,and that with an L : W ratio of 4 : 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L : W ratio of 4 : 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.

  4. 26Si Excited States via One-Neutron Removal from 27Si Using Radioactive Beam

    Science.gov (United States)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K. M.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2013-03-01

    A measurement of the p(27Si, d)26Si reaction has been performed to study levels of 26Si, with connections to the stellar 25Al(p, γ)26Si reaction rate. A beam of adioactive 27Si of energy 84.3 MeV/A was impinged on a polypropylene foil (CH2) of 180 mg/cm2 in thickness. De-excitation γ-rays were detected with a highly-segmented germanium detector array, in coincidence with the 26Si recoils. Our results are an independent measurement of states used in the energy calibration of other experiments on 26Si structure. They also suggest that the spin-parity of the Ex(26Si) = 6454 keV (Er = 940 keV) state should be 4+ instead of the previously adopted assignment of 0+.

  5. W-Mo-Si/SiC Oxidation Protective Coating for Carbon/Carbon Composites

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A W-Mo-Si/SiC double-layer oxidation protective coating for carbon/carbon (C/C) composites was prepared by a two-step pack cementation technique. XRD (X-ray diffraction) and SEM (scanning electron microscopy)results show that the coating obtained by the first step pack cementation was a thin inner buffer layer of SiC with some cracks and pores, and a new phase of (WxMo1-x)Si2 appeared after the second step pack cementation. Oxidation test shows that, after oxidation in air at 1773 K for 175 h and thermal cycling between 1773 K and room temperature for 18 times, the weight loss of the W-Mo-Si/SiC coated C/C composites was only 2.06%. The oxidation protective failure of the W-Mo-Si/SiC coating was attributed to the formation of some penetrable cracks in the coating.

  6. Behaviour of Oxygen-Implanted and Hydrogen-Implanted SiGe/Si Heterostructures

    Institute of Scientific and Technical Information of China (English)

    安正华; 张苗; 门传玲; 沈勤我; 林梓鑫; 李开成; 林成鲁

    2002-01-01

    For SiGe-on-insulator fabrication, a l00nm SiGe tilm with uniform germanium composition was grown on a Si(l00) substrate using a molecular beam epitaxy system without a graded SiGe buffer layer. The samples were implanted by oxygen ions at an energy of 45kev and a dose of 3 × 1017 cm-2, and annealed for five hours at 1250°C in flowing (Ar + 5% 02) atmosphere with a l00nm oxide protective layer. The result indicates that a buried oxide layer was successfully formed at the interface of SiGe and Si on the substrate. Furthermore,hydrogen was implanted into SiGe at the energy of 62keV and the dose of 6 × 1016 cm-2 to perform a blistering study, which confirmed the feasibility of H-induced layer splitting in SiGe layer.

  7. Characterization of ultrathin SiO 2/Si interface grown by low temperature plasma oxidation

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Ultrathin SiO 2 layers on Si (100) wafers were prepared by plasma oxidation at a low temperature (250℃). The analyses of X-ray photoelectron spectroscopy (XPS) and TEM reveal that the chemical composition of the oxide layer is stoichiometric SiO 2 and the SiO 2/Si interface is abrupt. The thickness of the ultrathin oxide layer obtained from XPS, capacitance-voltage (C-V) and ellipsometry measurements indicate a nonlinear time dependence. The high frequency C-V characterization of MOS structure shows that the fixed charge density in SiO 2 film is about 10 11 cm -2 . It is also shown that the strength of breakdown electrical field of SiO 2 film with 6 nm thickness is of the order of 10 6 Vcm -1 . These properties of the ultrathin SiO 2 layer ensure its application in silicon quantum devices.

  8. Characterization of SiC-SiC composites for accident tolerant fuel cladding

    Science.gov (United States)

    Deck, C. P.; Jacobsen, G. M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H. E.; Back, C. A.

    2015-11-01

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC-SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC-SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  9. Experimental study of phase equilibria in the 'SnO'-CaO-SiO{sub 2} system in equilibrium with tin metal

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xiaoyong; Hayes, Peter C.; Jak, Evgueni [Queensland Univ., Brisbane, QLD (Australia). Pyrometallurgy Research Centre

    2013-03-15

    Experimental studies have been conducted to determine the primary phases and liquidus temperatures in the binary 'SnO'-SiO{sub 2} and ternary 'SnO'-CaO-SiO{sub 2} systems in equilibrium with tin metal between 1148 and 1673K, using a high temperature equilibration and quenching technique followed by measurement of phase compositions using electron probe X-ray microanalysis. The melting temperature of cassiterite (SnO{sub 2}) in equilibrium with tin metal was found to be between 1398 and 1403K. The following primary phase fields were identified in the system: malayaite (CaSiSnO{sub 5}), pseudo-wollastonite (CaSiO{sub 3}), tridymite and cristobalite (SiO{sub 2}), and cassiterite (SnO{sub 2}). The liquidus of the 'SnO'-CaO-SiO{sub 2} system is dominated by the tridymite or cristobalite (SiO{sub 2}), and pseudo-wollastonite (CaSiO{sub 3}) primary phase fields in the range of compositions studied. (orig.)

  10. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  11. Fabrication and Properties of Ti3SiC2/SiC Composites

    Institute of Scientific and Technical Information of China (English)

    YIN Hongfeng; FAN Qiang; REN Yun; ZHANG Junzhan

    2008-01-01

    Ti3SiC2/SiC composites were fabricated by reactive hot pressing method. Effects of hot pressing temperature, the content and panicle size of SiC on phase composition, densification, mechanical properties and behavior of stress-strain of the composites were investigated. The results showed that:(1)Hot-pressing temperature influenced the phase composition of Ti3SiC2/SiC composites. The flexural strength and fracture toughness of composites increased with hot pressing temperature.(2)It became more difficult for the composites to densify when the content of SiC in composites increased. It need be sintered at higher temperature to get denser composite. The flexural strength and fracture toughness of composites increased when the content of SiC added in composites increased. However, when the content of SiC reached 50 wt%, the flexural strength and fracture toughness of composites decreased due to high content of pore in composites.(3)When the content of SiC was same, Ti3SiC2/SiC composites were denser while the particle size of SiC added in composites is 12.8μm compared with the composites that the particle size of SiC added is 3μm.The flexural strength and fracture toughness of composites increased with the increase of particle size of SiC added in composites.(4)Ti3SiC2/SiC composites were non-brittle fracture at room temperature.

  12. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 {times} 6 {times} 2 mm{sup 3} with a span-to-depth ratio of 10/1.

  13. C-V and DLTS studies of radiation induced Si-SiO2 interface defects

    Science.gov (United States)

    Capan, I.; Janicki, V.; Jacimovic, R.; Pivac, B.

    2012-07-01

    Interface traps at the Si-SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si-SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.

  14. An efficient Si light-emitting diode based on an n- ZnO/SiO{sub 2}-Si nanocrystals-SiO{sub 2}/p-Si heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Edward; Su, Fu-Hsiang; Shih, Ying-Tsang; Tsai, Hung-Ling; Chen, Ching-Huang; Wu, Mong-Kai; Yang, Jer-Ren; Chen, Miin-Jang, E-mail: mjchen@ntu.edu.t [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China)

    2009-11-04

    Si nanocrystals embedded in a SiO{sub 2} matrix and an n-type Al-doped ZnO (ZnO:Al) layer were applied to improve the external quantum efficiency from Si in n- ZnO/SiO{sub 2}-Si nanocrystals-SiO{sub 2}/p-Si heterojunction light-emitting diodes (LEDs). The Si nanocrystals were grown by low pressure chemical vapor deposition and the ZnO:Al layer was prepared by atomic layer deposition. The n-type ZnO:Al layer acts as an electron injection layer, a transparent conductive window, and an anti-reflection coating to increase the light extraction efficiency. Owing to the spatial confinement of carriers and surface passivation by the surrounding SiO{sub 2}, the Si nanocrystals embedded in the SiO{sub 2} matrix lead to a significant enhancement of the light emission efficiency from Si. An external quantum efficiency up to 4.3 x 10{sup -4} at the wavelength corresponding to the indirect bandgap of Si was achieved at room temperature.

  15. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Institute of Scientific and Technical Information of China (English)

    冉广照; 孙永科; 陈源; 戴伦; 崔晓明; 张伯蕊; 乔永平; 马振昌; 宗婉华; 秦国刚

    2003-01-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  16. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Science.gov (United States)

    Ran, Guang-Zhao; Sun, Yong-Ke; Chen, Yuan; Dai, Lun; Cui, Xiao-Ming; Zhang, Bo-Rui; Qiao, Yong-Ping; Ma, Zhen-Chang; Zong, Wan-Hua; Qin, Guo-Gang

    2003-02-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0 eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48 eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97 eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  17. Microwave Sintering of MoSi2 and SiC/MoSi2 Nanocomposite Ceramics%微波烧结制备MoSi2及SiC/MoSi纳米复合陶瓷

    Institute of Scientific and Technical Information of China (English)

    刘长虹; 艾云龙; 何文

    2012-01-01

    MoSi2 and SiC/MoSi2 nanocomposite ceramics were prepared by microwave sintering. Hybrid heating using SiC as preheating material and reasonable design of heat preservation system realized the fast elevation of temperature of MoSi2 on the low temperature stage, and enhanced the temperature uniformity of MoSi2. The density and mechanical properties tests showed that under the sintering parameters of 1 400℃ and holding 60 min, the properties of pure MoSi2 sample achieved relative density of 93.4% , fracture toughness 4.5 MPa·m1/2, Vickers hardness 10.53 GPa, and bending strength 186 MPa. All the mechanical properties of 10vol. % SiC -MoSi2 were superior to that of pure MoSi2, though the relative density decreased to 90.3%. The temperature of microwave sintering MoSi2 and SiC/ MoSi2 samples decreased 200℃ lower than hot-pressing sintering temperature (1 650℃ ) , but the mechanical properties are actually enhanced greatly, in particular MoSi2sample. Fracture surfaces indicated that compared to hot-pressing sintered samples,the microwave sintered samples presented refined grain size, fine and uniform pore. However the effect of grain refinement of microwave sintering to SiC/MoSi2 is weaken compared to pure MoSi2 sample.%采用微波烧结法制备了MoSi2和10vol% SiC/MoSi2纳米复合陶瓷.通过SiC预加热体的混合式加热法和合理的保温结构设计,实现了MoSi2低温阶段的快速升温,提高了温度均匀性.密度和力学性能测试结果表明,1450℃保温60 min烧结工艺下,MoSi2试样的相对密度达到93.4%,断裂韧度4.5 MPa·ml/2,维氏硬度为10.53 GPa,弯曲强度为186 MPa.10vol% SiC/MoSi2试样尽管相对密度下降为90.3%,但各项力学性能均优于MoSi2试样.相比1650℃热压烧结,微波烧结温度降低了200℃,MoSi2和SiC/MoSi2试样致密性有所下降,但力学性能有较大提高,尤其是MoSi2试样.断口扫描分析表明,微波烧结试样相对热压烧结试样基体晶粒更细,孔隙细

  18. An siRNA-based method for efficient silencing of gene expression in mature brown adipocytes.

    Science.gov (United States)

    Isidor, Marie S; Winther, Sally; Basse, Astrid L; Petersen, M Christine H; Cannon, Barbara; Nedergaard, Jan; Hansen, Jacob B

    2016-01-01

    Brown adipose tissue is a promising therapeutic target for opposing obesity, glucose intolerance and insulin resistance. The ability to modulate gene expression in mature brown adipocytes is important to understand brown adipocyte function and delineate novel regulatory mechanisms of non-shivering thermogenesis. The aim of this study was to optimize a lipofection-based small interfering RNA (siRNA) transfection protocol for efficient silencing of gene expression in mature brown adipocytes. We determined that a critical parameter was to deliver the siRNA to mature adipocytes by reverse transfection, i.e. transfection of non-adherent cells. Using this protocol, we effectively knocked down both high- and low-abundance transcripts in a model of mature brown adipocytes (WT-1) as well as in primary mature mouse brown adipocytes. A functional consequence of the knockdown was confirmed by an attenuated increase in uncoupled respiration (thermogenesis) in response to β-adrenergic stimulation of mature WT-1 brown adipocytes transfected with uncoupling protein 1 siRNA. Efficient gene silencing was also obtained in various mouse and human white adipocyte models (3T3-L1, primary mouse white adipocytes, hMADS) with the ability to undergo "browning." In summary, we report an easy and versatile reverse siRNA transfection protocol to achieve specific silencing of gene expression in various models of mature brown and browning-competent white adipocytes, including primary cells.

  19. Centrifugal casting processes of manufacturing in situ functionally gradient composite materials of Al-19Si-5Mg alloy

    Institute of Scientific and Technical Information of China (English)

    XIE Yong; LIU Changming; ZHAI Yanbo; WANG Kai; LING Xuedong

    2009-01-01

    Cylindrical components of in situ functionally gradient composite materials of Al-19Si-5Mg alloy were manufactured by centrifugal casting. Microstructure characteristics of the manufactured components were observed and the effects of the used process factors on these character-istics were analyzed. The results of observations shows that, in thickness, the components possess microstructures accumulating lots of Mg2Si particles and a portion of primary silicon particles in the inner layer, a little Mg2Si and primary silicon particles in the outer layer, and without any Mg2Si and primary silicon particle in the middle layer. The results of the analysis indicate that the rotation rate of centrifugal casting, mould temperature, and melt pouring temperature have evidently affected the accumulation of the second phase particles. Also, the higher the centrifugal rotation rate, mould temperature, and melt pouring temperature are, the more evident in the inner layer the degree of accumulation of Mg2Si and primary silicon particles is.

  20. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.;

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport...

  1. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  2. Microstructure and abrasive wear studies of laser clad Al-Si/SiC composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Colaco, R.; Ocelik, V.; De Hosson, J. Th. M.; Vilar, R.; Gyulai, J; Szabo, PJ

    2007-01-01

    Surface coatings of Al-Si/SiC metal-matrix composites were deposited on Al-7 wt. % Si alloy substrates by laser cladding. The microstructure of the coatings was characterized by optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The microstructure of the coating mate

  3. The effect of biaxial strain on impurity diffusion in Si and SiGe

    DEFF Research Database (Denmark)

    Larsen, Arne Nylandsted; Zangenberg, Nikolaj; Fage-Pedersen, Jacob

    2005-01-01

    Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have...

  4. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

    Institute of Scientific and Technical Information of China (English)

    Gong-Ru Lin

    2007-01-01

    The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.

  5. About the International System of Units (SI) Part III. SI Table

    Science.gov (United States)

    Aubrecht, Gordon J., II; French, Anthony P.; Iona, Mario

    2012-01-01

    Before discussing more details of SI, we will summarize the essentials in a few tables that can serve as ready references. If a unit isn't listed in Tables I-IV, it is not part of SI or specifically allowed for use with SI. The units and symbols that are sufficient for most everyday applications are given in bold.

  6. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys

    African Journals Online (AJOL)

    user

    Aluminium-Silicon (Al-Si) alloys are considered as the most important cast .... of MA1, the melt was stirred gently with zircon coated iron rod and was held for 5 min. ..... and mechanical properties of Al-7Si and Al-7Si-2.5Cu cast alloys, Materials ...

  7. Preparation of Si3N4–SiC composites by microwave route

    Indian Academy of Sciences (India)

    M Panneerselvam; K J Rao

    2002-12-01

    Si3N4–SiC composites have been microwave sintered using -Si3N4 and -SiC as starting materials. Si3N4 rich compositions (95 and 90 vol.% Si3N4) have been sintered above 96% of theoretical density without using any sintering additives in 40 min. A monotonic decrease in relative density is observed with increase in SiC proportion in the composite. Decrease in relative density has manifested in the reduction of fracture toughness and microhardness values of the composite with increase in SiC content although the good sintering of matrix Si3N4 limits the decrease of fracture toughness. Highest value of fracture toughness of 6.1 MPa m1/2 is observed in 10 vol.% SiC composite. Crack propagation appears to be transgranular in the Si3N4 matrix and the toughening of the composites is through crack deflection around hard SiC particles in addition to its debonding from the matrix.

  8. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  9. Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4

    Institute of Scientific and Technical Information of China (English)

    张卫华; 许如清; 李家明

    2003-01-01

    Based on the multiple-scattering self-consistent-field method, we have studied the photoabsorption spectra near the Si 2p thresholds of silane. According to our calculations, the clear assignments of the inner-shell photoabsorption spectra are provided. In comparison with the high-resolution experimental spectra, the geometric structure of the Si 2p-excited SiH4** is recommended to be of a C2v symmetry. More specifically, the Si 2p-excited Si4** have two bond lengths of 2.50 a.u. and another two bond lengths of 2.77 a.u., and the corresponding two bond angles are 104.0° and 112.5° respectively.

  10. Over Saturation in SiPMs: The Difference Between Signal Charge and Signal Amplitude

    CERN Document Server

    Ahnen, Max Ludwig

    2015-01-01

    A recent report on the over saturation in SiPMs is puzzling. The measurements, using a variety of SiPMs, show an excess in signal far beyond the physical limit of the number of SiPM microcells without indication of an ultimate saturation. In this work I propose a solution to this problem. Different measurements and theoretical models of avalanche propagation indicate that multiple simultaneous primary avalanches produce an ever narrower and faster signal. This is because of a speed-up of effective avalanche propagation processes. It means that SiPMs, operated at their saturation regime, should become faster the more light they detect. Therefore, signal extraction methods that use the amplitude of the signal should see an over saturation effect. Measurements with a commercial SiPM illuminated with bright picosecond pulses in the saturation regime demonstrate that indeed the rising edge of the SiPM signal gets faster as the light pulses get brighter. A signal extractor based on the amplitude shows a nonlinear b...

  11. Drug delivery of siRNA therapeutics: potentials and limits of nanosystems.

    Science.gov (United States)

    Reischl, Daniela; Zimmer, Andreas

    2009-03-01

    Gene therapy is a promising tool for the treatment of human diseases that cannot be cured by rational therapies. The major limitation for the use of small interfering RNA (siRNA), both in vitro and in vivo, is the inability of naked siRNA to passively diffuse through cellular membranes due to the strong anionic charge of the phosphate backbone and consequent electrostatic repulsion from the anionic cell membrane surface. Therefore, the primary success of siRNA applications depends on suitable vectors to deliver therapeutic genes. Cellular entrance is further limited by the size of the applied siRNA molecule. Multiple delivery pathways, both viral and nonviral, have been developed to bypass these problems and have been successfully used to gain access to the intracellular environment in vitro and in vivo, and to induce RNA interference (RNAi). This review focuses on different pathways for siRNA delivery and summarizes recent progress made in the use of vector-based siRNA technology.

  12. Pulmonary retention of ceramic fibers in silicon carbide (SiC) workers.

    Science.gov (United States)

    Dufresne, A; Loosereewanich, P; Armstrong, B; Infante-Rivard, C; Perrault, G; Dion, C; Massé, S; Bégin, R

    1995-05-01

    The fibrous inorganic content of post-mortem lung material obtained from 15 men who worked in the primary silicon carbide (SiC) industry was evaluated. Five men had neither lung fibrosis nor lung cancer (NFNC), six had lung fibrosis (LF), and four had lung fibrosis and lung cancer (LFLC). The workers had 23 to 32 years of exposure. Mean duration of exposure was 23.4 (SD 6.9) years in the NFNC group, 28.8 (SD 5.5) in the LF, and 32.3 (SD 9.0) in the LFLC group. Concentrations of SiC ceramic fibers and other fibrous minerals and angular particles were determined by transmission electron microscopy and energy dispersive spectroscopy. The geometric mean and geometric standard deviation lung concentrations of SiC ceramic fibers 0.1). Pulmonary retention of SiC fibers > or = 5 microns showed an excess in LF and LFLC cases combined versus NFNC that approached statistical significance (Mann-Whitney, p = 0.06). There was a somewhat greater difference for lung retention of ferruginous bodies between NFNC and either LF or LFLC cases (Mann-Whitney, p = 0.02). SiC fibers > or = 5 microns and angular particles containing Si and especially ferruginous bodies were found at higher concentrations in LF and LFLC than in NFNC cases.

  13. Microstructure and Wear Resistance of Laser Clad Cobalt-Based Alloy/SiCp Composite Coating

    Institute of Scientific and Technical Information of China (English)

    LI Ming-xi; SI Song-hua; HE Yi-zhu; SUN Guo-xiong

    2004-01-01

    The SiCp (20 %) reinforced cobalt-based alloy composite coatings deposited by laser cladding on IF steel were introduced. The microstructure across the whole section of such coatings was examined using optical microscope, scanning electron microscope (SEM) and X-ray diffractometer (XRD), and the wear resistance of the coatings was measured by MM-200 type wear testing machine. The results show that the SiCp is completely dissolved during laser cladding and the primary phase in the coatings is γ-Co. The other phases, such as Si2W, CoWSi, Cr3Si and CoSi2, are formed by carbon, silicon reacting with other elements existing in the melting pool. There are various crystallization morphologies in different zones, such as planar crystallization at the interface, followed by cellular and dendrite crystallization from interface to the surface. The direction of solidification changes from one direction perpendicular to interface to multi-directions at the central and upper regions of the clad. The wear resistance of the clad is improved by adding SiCp.

  14. CaO/SiO2和Fe/SiO2比对空气中PbO-ZnO-CaO-SiO2-“Fe2O3”系相平衡的影响%Effect of CaO/SiO2 and Fe/SiO2 ratios on phase equilibria in PbO-ZnO-CaO-SiO2-"Fe2O3" system in air

    Institute of Scientific and Technical Information of China (English)

    M.PEREZ-LABRA; A.ROMERO-SERRANO; A.HERNANDEZ-RAMIREZ; I.ALMAGUER-GUZMAN; R.BENAVIDES-PEREZ

    2012-01-01

    Experimental studies on phase equilibria and liquidus temperature in the PbO-ZnO-CaO-SiO2-"Fe2O3" system,with the mass ratios of CaO/SiO2=1-1.6 and Fe/SiO2=1.3-1.7,and 40% PbO and 8% ZnO,were carried out between 1273 and 1573 K.Slags were equilibrated at 1273 to 1573 K and cooled rapidly by quenching.The XRD and SEM-EDS results showed that the slag compositions are in the franklinite primary phase field.Calcium and lead silicates are formed between 1373 and 1473 K.The Ca/Pb silicate and magnetoplumbite phases are partially formed by an incongruent reaction.The experimental and thermodynamical results showed that the liquidus increased by increasing CaO/SiO2 mass ratio and decreasing Fe/SiO2 mass ratio.%实验测定了CaO/SiO2和Fe/SiO2质量比分别为1~1.6和1.3~1.7、含40% PbO和8%ZnO的PbO-ZnO-CaO-SiO2-"Fe2O3”渣系的相平衡和液相线温度.将该渣系在1273~1573 K达到平衡,然后快速淬火冷却.XRD和SEM-EDS分析结果表明,该渣的成分位于锌铁尖晶石相的初始成相区,在1273~1473K生成硅酸钙/铅,部分硅酸钙/铅和磁铁铅矿相是通过转熔反应生成的.实验结果和热力学计算结果表明,液相线温度随着渣中CaO/SiO2比的增加和Fe/SiO2比的降低而增加.

  15. Tunneling magnetoresistance in Si nanowires

    Science.gov (United States)

    Montes, E.; Rungger, I.; Sanvito, S.; Schwingenschlögl, U.

    2016-11-01

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green’s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  16. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  17. Metastability of a-SiOx:H thin films for c-Si surface passivation

    Science.gov (United States)

    Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

    2017-01-01

    The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

  18. Experimental PDT: studies on new Si-phthalocyanines and Si-naphthalocyanines in Cremophor emulsions

    Science.gov (United States)

    Shopova, Maria; Mantareva, Vanya; Woehrle, Dieter; Mueller, Silke

    1996-12-01

    In the present work the following silicon (IV) - phthalocyanines and -naphthalocyanines bearing methoxyethylene glycol or methoxypolyethylene glycol covalently bound at the silicon are investigated: SiPc[OCH2CH2OCH3]2 (SiPc1), SiNc[OCH2CH2OCH3]2 (SiNc), SiPc[(OCH2CH2)nOCH3] with n approximately 115 (SiPc2). The phototherapeutic effect was shown at Lewis lung carcinoma implanted in mice. SiPc2 is monomeric soluble in water whereas the other two compounds aggregated in this solvent. Therefore these compounds were dissolved monomer in in aqueous Cremophor solution before in vivo administration. Laser irradiation was applied 7 days after implantation and 24 h after drug administration at the following wavelength (eta) ext: 672 nm for SiPc1 and SiPc2, 782 nm for SiNc. In all cases a fluence rate of 370 mW/cm2 at fluence of 360 J/cm2 was used. The assessment criteria for the tumor response were the changes in the mean tumor diameter with time, regrowth delay and average survival time (AST). According to the first parameter the most promising result was obtained after treatment with SiPc1. For example the mean tumor diameter increases as follows: SiPc1 less than SiPc2 less than SiNc very much less than control group without photosensitizer. The regrowth delay showed the same trend. however, for AST another dependence was observed. AST was the longest for SiPc2 (26 days) and shortest for SiNc (22 days). Compared to the control group (without sensitizer and irradiation) the AST was 9 days longer after SiPc2 treatment. Comparing SiPc1 and SiPc2 the chain length of the substituents does not influence the phototherapeutic properties. The detected therapeutic results probably are connected with the long wavelength absorption of the photosensitizers. The relatively lower affectivity of SiNc may be due to a lower degree of tumor accumulation as it was observed in our preliminary pharmacokinetic studies. It is also possible that the shorter AST after treatment with SiNc is

  19. Primary osteosarcoma of breast

    Science.gov (United States)

    Gull, Sadaf; Patil, Prashant; Spence, Roy AJ

    2011-01-01

    Primary osteosarcoma of breast is rare. The authors present a case of a 51-year-old female who was admitted with a large necrotising tumour involving the right breast. CT scan confirmed chest wall invasion along with a solitary lung metastasis. She underwent a primary mastectomy with chest wall reconstruction. Unfortunately 3 months later she developed local recurrence. PMID:22688473

  20. Using Primary Source Documents.

    Science.gov (United States)

    Mintz, Steven

    2003-01-01

    Explores the use of primary sources when teaching about U.S. slavery. Includes primary sources from the Gilder Lehrman Documents Collection (New York Historical Society) to teach about the role of slaves in the Revolutionary War, such as a proclamation from Lord Dunmore offering freedom to slaves who joined his army. (CMK)

  1. Primary Spinal Meningeal Melanocytoma

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Dong Ho [Dong-A University, Busan (Korea, Republic of)

    2009-12-15

    Primary meningeal melanocytic neoplasms are rare lesions that originate from leptomeningeal melanocytes. An intradural meningeal melanocytoma in the thoracic spine is less common than a malignant melanoma, which is its malignant counterpart. We report a case of a histopathologically confirmed primary intradural meningeal melanocytoma in the thoracic spine along with a literature.

  2. Using Primary Source Documents.

    Science.gov (United States)

    Mintz, Steven

    2003-01-01

    Explores the use of primary sources when teaching about U.S. slavery. Includes primary sources from the Gilder Lehrman Documents Collection (New York Historical Society) to teach about the role of slaves in the Revolutionary War, such as a proclamation from Lord Dunmore offering freedom to slaves who joined his army. (CMK)

  3. Bilateral primary writing tremor.

    Science.gov (United States)

    Jimenez-Jimenez; Cabrera-Valdivia; Orti-Pareja; Gasalla; Tallon-Barranco; Zurdo

    1998-11-01

    Primary writing tremor is a task-specific tremor that is considered to be unilateral. We report a 59-year-old man with a 5-year history of a typical primary writing tremor in the right hand who developed similar symptoms in the left hand. Copyright 1998 Lippincott Williams & Wilkins

  4. Transforming Primary Mathematics

    Science.gov (United States)

    Askew, Mike

    2011-01-01

    What is good mathematics teaching? What is mathematics teaching good for? Who is mathematics teaching for? These are just some of the questions addressed in "Transforming Primary Mathematics", a highly timely new resource for teachers which accessibly sets out the key theories and latest research in primary maths today. Under-pinned by findings…

  5. Primary health care.

    Science.gov (United States)

    Kitai, A

    1986-07-01

    Development of primary care in Japan in still relatively unorganized and unstructured. As mentioned above, the author describes some strengths and weaknesses of the Japanese primary care system. In addressing the weaknesses the following suggestions are offered for the Japanese primary care delivery system: Increase the number of emergency rooms for all day, especially on holidays and at night. Introduce an appointment system. Introduce an open system of hospitals. Coordinate with public hospitals and primary care clinics. Organize the referral system between private practitioners and community hospitals. Increase the number of paramedical staff. Strengthen group practice among primary care physicians. Increase the establishment of departments of primary care practice with government financial incentives to medical schools and teaching hospitals. Develop a more active and direct teaching role for primary care practice or family practice at undergraduate, graduate, and postgraduate levels. Improve and maintain present health insurance payment method, shifting from quantity of care to quality and continuity of care. Introduce formal continuing education. Introduce formal training programs of primary care and strengthen ambulatory care teaching programs.

  6. Phase equilibria in the Ti-rich corner of the Ti-Si-Sn system

    Energy Technology Data Exchange (ETDEWEB)

    Bulanova, M.; Soroka, A.; Zheltov, P.; Vereshchaka, V.; Meleshevich, K. [Natsional`na Akademyiya Nauk Ukrayini, Kiev (Ukraine). Inst. of Problems in Materials Science

    1999-07-01

    Using differential thermal, X-ray, metallographic and electron microprobe analyses phase equilibria in Ti-rich corner of the Ti-Si-Sn system were studied. Projections of solidus and liquidus surfaces, isothermal section at 1300 C and isopleth at 90 at.% Ti were constructed. It was shown that in the concentration interval studied at the solidus and 1300 C temperatures the Ti{sub 5}(Si, Sn){sub 3} (Z) phase coexists with left angle {beta}-Ti right angle ({beta}). The liquidus surface is characterised by the fields of {beta} and Z primary crystallisation, resulting in a monovariant L <=> {beta} + Z eutectic. (orig.) 8 refs.

  7. Experimental determination of grain density function of AZ91/SiC composite with different mass fractions of SiC and undercoolings using heterogeneous nucleation model

    Directory of Open Access Journals (Sweden)

    J. Lelito

    2011-02-01

    Full Text Available The grain density, Nv, in the solid state after solidification of AZ91/SiC composite is a function of maximum undercooling, ΔT, of a liquid alloy. This type of function depends on the characteristics of heterogeneous nucleation sites and number of SiC present in the alloy. The aim of this paper was selection of parameters for the model describing the relationship between the grain density of primary phase and undercooling. This model in connection with model of crystallisation, which is based on chemical elements diffusion and grain interface kinetics, can be used to predict casting quality and its microstructure. Nucleation models have parameters, which exact values are usually not known and sometimes even their physical meaning is under discussion. Those parameters can be obtained after mathematical analysis of the experimental data. The composites with 0, 1, 2, 3 and 4wt.% of SiC particles were prepared. The AZ91 alloy was a matrix of the composite reinforcement SiC particles. This composite was cast to prepare four different thickness plates.They were taken from the region near to the thermocouple, to analyze the undercooling for different composites and thickness plates and its influence on the grain size. The microstructure and thermal analysis gave set of values that connect mass fraction of SiC particles, and undercooling with grain size. These values were used to approximate nucleation model adjustment parameters. Obtained model can be very useful in modelling composites microstructure.

  8. Effect of high-intensity ultrasonic irradiation on the modification of solidification microstructure in a Si-rich hypoeutectic Al-Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Das, A., E-mail: A.Das@swansea.ac.uk [Materials Research Centre, School of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PP (United Kingdom); Kotadia, H.R. [Brunel Centre for Advanced Solidification Technology, Brunel University, Uxbridge, UB8 3PH (United Kingdom)

    2011-02-15

    Effect of high-intensity ultrasound irradiation in modifying complex solidification microstructure is explored in a high Si containing Al-Si alloy and the origin of microstructural changes explained on the basis of nucleation and growth behaviour. Complete suppression of dendritic growth and dramatic refinement to globular morphology were observed for primary {alpha}-Al grains. Strong supportive evidence is presented towards enhanced and prolonged heterogeneous nucleation triggered by cavitation induced increase in the equilibrium melting point and effective dissipation of latent heat at the solidification front. Morphological evolution of eutectic Si and intermetallic particles is found to be dominated by coarsening and spherodisation from strong fluid flow in areas of intense cavitation near the ultrasonic radiator. Outside the region of direct energy transfer, Si particle morphology appears to be controlled predominantly by the imposed cooling conditions. Extremely fine and short Si-platelets observed in the intergranular spaces near the radiator are explained on the basis of probable rapid cooling of final liquid pockets of small volume and large surface area, rather than refinement through ultrasound.

  9. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup...

  10. The electronic properties of bare and alkali metal adsorbed two-dimensional GeSi alloy sheet

    Science.gov (United States)

    Qiu, Wenhao; Ye, Han; Yu, Zhongyuan; Liu, Yumin

    2016-09-01

    In this paper, the structural and electronic properties of both bare and alkali metal (AM) atoms adsorbed two-dimensional GeSi alloy sheet (GeSiAS) are investigated by means of first-principles calculations. The band gaps of bare GeSiAS are shown slightly opened at Dirac point with the energy dispersion remain linear due to the spin-orbit coupling effect at all concentrations of Ge atoms. For metal adsorption, AM atoms (including Li, Na and K) prefer to occupy the hexagonal hollow site of GeSiAS and the primary chemical bond between AM adatom and GeSiAS is ionic. The adsorption energy has an increase tendency with the increase of the Ge concentration in supercell. Besides, single-side adsorption of AM atoms introduces band gap at Dirac point, which can be tuned by the Ge concentration and the species of AM atoms. The strong relation between the band gaps and the distribution of Si and Ge atoms inside GeSiAS are also demonstrated. The opened band gaps of AM covered GeSiAS range from 14.8 to 269.1 meV along with the effective masses of electrons ranging from 0.013 to 0.109 me, indicating the high tunability of band gap as well as high mobility of carriers. These results provide a development in two-dimensional alloys and show potential applications in novel micro/nano-electronic devices.

  11. Evaluating of simulated carbon flux phenology over a cropland ecosystem in a semiarid area of China with SiBcrop

    Science.gov (United States)

    Du, Qun; Liu, Huizhi; Xu, Lujun

    2017-02-01

    The cropland ecosystem in semiarid areas is sensitive to climate change. The accurate representation of crop phenology is important for predicting the carbon and water exchange process. The performance of a newly developed phenological model (SiBcrop) for simulations of carbon flux phenology in a semiarid area ecosystem was evaluated. The results showed that the SiBcrop improved the prediction for daily maximum gross primary production (GPP), and the days GPP reached the maximum value were closer to the observation, compared to SiB3. SiBcrop had a better prediction for both monthly total net ecosystem exchange (NEE) in the growing season than in the dormant season in semiarid areas. The day when the cumulative NEE predicted with SiBcrop became positive was closer to the observation. The observed start date of carbon uptake (CUstart) had a larger annual variation than did the end date of carbon uptake (CUend). SiBcrop had a better prediction for CUstart but poor for CUend, compared to SiB3. There was a longer carbon uptake period (CUP) predicted with SiBcrop than the observed results.

  12. Evaluating of simulated carbon flux phenology over a cropland ecosystem in a semiarid area of China with SiBcrop.

    Science.gov (United States)

    Du, Qun; Liu, Huizhi; Xu, Lujun

    2017-02-01

    The cropland ecosystem in semiarid areas is sensitive to climate change. The accurate representation of crop phenology is important for predicting the carbon and water exchange process. The performance of a newly developed phenological model (SiBcrop) for simulations of carbon flux phenology in a semiarid area ecosystem was evaluated. The results showed that the SiBcrop improved the prediction for daily maximum gross primary production (GPP), and the days GPP reached the maximum value were closer to the observation, compared to SiB3. SiBcrop had a better prediction for both monthly total net ecosystem exchange (NEE) in the growing season than in the dormant season in semiarid areas. The day when the cumulative NEE predicted with SiBcrop became positive was closer to the observation. The observed start date of carbon uptake (CUstart) had a larger annual variation than did the end date of carbon uptake (CUend). SiBcrop had a better prediction for CUstart but poor for CUend, compared to SiB3. There was a longer carbon uptake period (CUP) predicted with SiBcrop than the observed results.

  13. Synthesis of Hybrid SiC/SiO2 Nanoparticles and Their Polymer Nanocomposites

    Science.gov (United States)

    Hassan, Tarig A.; Rangari, Vijaya K.; Baker, Fredric; Jeelani, Shaik

    2013-04-01

    In the present investigation, silicon carbide (β-SiC) nanoparticles ( 30 nm) were coated on silicon dioxide (SiO2) nanoparticles ( 200 nm) using sonochemical method. The resultant hybrid nanoparticles were then infused into SC-15 epoxy resin to enhance the thermal and mechanical properties of SC-15 epoxy for structural application. To fabricate an epoxy-based nanocomposite containing SiC/SiO2 hybrid nanoparticles, we have opted a two-step process. In the first step, the silica nanoparticles were coated with SiC nanoparticles using high intensity ultrasonic irradiation. In a second step, 1 wt.% of as-prepared SiC/SiO2 particles were dispersed in epoxy part-A (diglycidylether of bisphenol A) using a high intensity ultrasound for 30 min at 5°C. The part-B (cycloaliphatic amine hardener) of the epoxy was then mixed with part-A-SiC/SiO2 mixture using a high-speed mechanical stirrer for 10 min. The SiC/SiO2/epoxy resin mixture was cured at room temperature for 24 h. The SiC nanoparticles coating on SiO2 was characterized using X-ray diffraction (XRD) and high resolution transmission electron microscope (TEM). The as-prepared nanocomposite samples were characterized using thermo gravimetric analysis (TGA) and differential scanning calorimeter (DSC). Compression tests have been carried out for both nanocomposite and neat epoxy systems. The results indicated that 1 wt.% (SiC) + (SiO2) loading derived improvements in both thermal and mechanical properties when compared to the neat epoxy system.

  14. Optical properties of passivated Si nanocrystals and SiO{sub {ital x}} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Dinh, L.N. [Department of Applied Science, University of California, Davis/Livermore, California (United States)]|[Chemistry and Materials Science Department, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Chase, L.L.; Balooch, M.; Siekhaus, W.J. [Chemistry and Materials Science Department, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Wooten, F. [Department of Applied Science, University of California, Davis/Livermore, California 94550 (United States)

    1996-08-01

    Thin films of Si nanoclusters passivated with oxygen or hydrogen, with an average size of a few nanometers, have been synthesized by thermal vaporization of Si in an Ar buffer gas, followed by subsequent exposure to oxygen or atomic hydrogen. High-resolution transmission electron microscopy and x-ray diffraction revealed that these nanoclusters were crystalline. However, during synthesis, if oxygen was the buffer gas, a network of amorphous Si oxide nanostructures (an-SiO{sub {ital x}}) with occasional embedded Si dots was formed. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. Absorption in the Si cores for surface passivated Si nano- crystals (nc-Si), but mainly in oxygen related defect centers for an-SiO{sub {ital x}}, was observed by photoluminescence excitation spectroscopy. The visible components of PL spectra were noted to blueshift and broaden as the size of the nc-Si was reduced. There were differences in PL spectra for hydrogen and oxygen passivated nc-Si. Many common PL properties between oxygen passivated nc-Si and an-SiO{sub {ital x}} were observed. Our data can be explained by a model involving absorption between quantum confined states in the Si cores and emission for which the decay times are very sensitive to surface and/or interface states. The emission could involve a simple band-to-band recombination mechanism within the Si cores. The combined evidence of all of our experimental results suggests, however, that emission between surface or interface states is a more likely mechanism. {copyright} {ital 1996 The American Physical Society.}

  15. Optical properties of passivated Si nanocrystals and SiOx nanostructures

    Science.gov (United States)

    Dinh, L. N.; Chase, L. L.; Balooch, M.; Siekhaus, W. J.; Wooten, F.

    1996-08-01

    Thin films of Si nanoclusters passivated with oxygen or hydrogen, with an average size of a few nanometers, have been synthesized by thermal vaporization of Si in an Ar buffer gas, followed by subsequent exposure to oxygen or atomic hydrogen. High-resolution transmission electron microscopy and x-ray diffraction revealed that these nanoclusters were crystalline. However, during synthesis, if oxygen was the buffer gas, a network of amorphous Si oxide nanostructures (an-SiOx) with occasional embedded Si dots was formed. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. Absorption in the Si cores for surface passivated Si nano- crystals (nc-Si), but mainly in oxygen related defect centers for an-SiOx, was observed by photoluminescence excitation spectroscopy. The visible components of PL spectra were noted to blueshift and broaden as the size of the nc-Si was reduced. There were differences in PL spectra for hydrogen and oxygen passivated nc-Si. Many common PL properties between oxygen passivated nc-Si and an-SiOx were observed. Our data can be explained by a model involving absorption between quantum confined states in the Si cores and emission for which the decay times are very sensitive to surface and/or interface states. The emission could involve a simple band-to-band recombination mechanism within the Si cores. The combined evidence of all of our experimental results suggests, however, that emission between surface or interface states is a more likely mechanism.

  16. Effect of Bi modification treatment on microstructure, tensile properties, and fracture behavior of cast Al-Mg2Si metal matrix composite

    Directory of Open Access Journals (Sweden)

    Wu Xiaofeng

    2013-01-01

    Full Text Available Bi has a good modification effect on the hypoeutectic Al-Si alloy, and the morphology of eutectic Si changes from coarse acicular to fine fibrous. Based on the similarity between Mg2Si and Si phases in crystalline structure and crystallization process, the present study investigated the effects of different concentrations of Bi on the microstructure, tensile properties, and fracture behavior of cast Al-15wt.%Mg2Si in-situ metal matrix composite. The results show that the addition of the proper amount of Bi has a significant modification effect on both primary and eutectic Mg2Si in the Al-15wt.%Mg2Si composite. With an increase in Bi content from 0 to 1wt.%, the morphology of the primary Mg2Si is changed from irregular or dendritic to polyhedral shape; and its average particle size is significantly decreased from 70 to 6 μm. Moreover, the morphology of the eutectic Mg2Si phase is altered from flake-like to very short fibrous or dot-like. When the Bi addition exceeds 4.0wt.%, the primary Mg2Si becomes coarse again. However, the eutectic Mg2Si still exhibits the modified morphology. Tensile tests reveal that the Bi addition can improve the tensile strength and ductility of the material. Compared with those of the unmodified composite, the ultimate tensile strength and percentage elongation after fracture with 1.0wt.% Bi increase 51.2% and 100%, respectively. At the same time, the Bi addition changes the fracture behavior from brittle to ductile.

  17. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    performed extensive growth studies aimed to create entire new families of Ge1-x-ySixSny materials on industrially compatible group IV platforms ( Si , Ge and...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si -Ge-Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final...4. TITLE AND SUBTITLE Next generation, Si -compatible materials and devices in the Si -Ge-Sn system 5a. CONTRACT NUMBER FA9550-12-1-0208 5b. GRANT

  18. Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

    Institute of Scientific and Technical Information of China (English)

    I.; V.; ANTONOVA; M.; S.; KAGAN; E.; P.; NEUSTROEV; S.; A.; SMAGULOVA

    2009-01-01

    Recharging of quantum confinement levels in SiGe quantum wells (QW) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. A peak with activation energy varying in the range from 0 to 100 meV in different tempera-ture intervals was observed in Q-DLTS spectra. Activation energies extracted from Q-DLTS measure-mens are in good agreement with energies of quantum confinement levels in the QW.

  19. High Efficiency Hybrid Solar Cells Using Nanocrystalline Si Quantum Dots and Si Nanowires.

    Science.gov (United States)

    Dutta, Mrinal; Thirugnanam, Lavanya; Trinh, Pham Van; Fukata, Naoki

    2015-07-28

    We report on an efficient hybrid Si nanocrystal quantum dot modified radial p-n junction thinner Si solar cell that utilizes the advantages of effective exciton collection by energy transfer from nanocrystal-Si (nc-Si) quantum dots to underlying radial p-n junction Si nanowire arrays with excellent carrier separation and propagation via the built-in electric fields of radial p-n junctions. Minimization of recombination, optical, and spectrum losses in this hybrid structure led to a high cell efficiency of 12.9%.

  20. Evaluation of CVI SiC/SiC Composites for High Temperature Applications

    Science.gov (United States)

    Kiser, D.; Almansour, A.; Smith, C.; Gorican, D.; Phillips, R.; Bhatt, R.; McCue, T.

    2017-01-01

    Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites are candidate materials for various high temperature turbine engine applications because of their high specific strength and good creep resistance at temperatures of 1400 C (2552 F) and higher. Chemical vapor infiltration (CVI) SiC/SiC ceramic matrix composites (CMC) incorporating Sylramic-iBN SiC fiber were evaluated via fast fracture tensile tests (acoustic emission damage characterization to assess cracking behavior), tensile creep testing, and microscopy. The results of this testing and observed material behavior degradation mechanisms are reviewed.

  1. DLC-Si protective coatings for polycarbonates

    Directory of Open Access Journals (Sweden)

    Damasceno J.C.

    2003-01-01

    Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

  2. Biomorphic SiC from lotus root

    Institute of Scientific and Technical Information of China (English)

    Qing Wang; Donghua Wang; Guoqiang Jin; Yingyong Wang; Xiangyun

    2009-01-01

    Biomorphic silicon carbide (bioSiC) with macro-channels and alveolate micropores was prepared by spon-taneous infiltration of melted silicon into a carbon template derived from lotus root at 1600 ℃. The carbon template and purified bioSiC samples were characterized by X-ray diffraction, scanning electron microscopy, camera and mercury intrusion. The results suggest that the bioSiC mainly consists of β-SiC and perfectly replicates the shape and microstructure of the carbon template. The bioSiC has a mean pore diameter of 91.1 μm and a porosity of 50.1%, both similar to those of the carbon template, 92.3 μm and 50.7%, respectively.

  3. Properties of SiMn slag as apozzolanic material in portland cement manufacture

    Directory of Open Access Journals (Sweden)

    Frías, M.

    2005-12-01

    Full Text Available The primary purpose of this study was to evaluate the behaviour of SiMn slag as a pozzolanic material in commercial Portland cement manufacture. This necessitated exploring different scientific and technical aspects to ensure a correct valuation. The results obtained revealed that silica and calcium are the main components of SiMn slag, whose pozzolanic activity occupies an intermediate position between silica fume and fly ash; it reduces heat of hydration and mortars made with cement containing SiMn slag exhibit compressive strength values similar to the figures for standard mortar. Consequently, the use of SiMn slag as an active addition to cement is feasible, inasmuch as the resulting product meets the requirements laid down in the present legislation.

    El objetivo principal de este trabajo es evaluar el comportamiento de la escoria de SiMn como material puzolánico en la fabricación de cementos Portland comerciales. Para ello, resulta necesario investigar diferentes aspectos científicos y técnicos que conlleven a una correcta valorización de las mismas. Los resultados obtenidos en el presente trabajo han puesto de manifiesto que la escoria de SiMn presenta una naturaleza sílico-cálcica, actividad puzolúnica intermedia entre el humo de sílice y ceniza volante, reduce el calor de hidratación y los morteros con escoria de SiMn muestra alcanzan resistencias a compresión similares a las del mortero patrón. Por lo tanto, la utilización de la escoria de SiMn como adición activa al cemento es viable, cumpliendo con las exigencias recogidas en la norma vigente.

  4. PLGA microspheres encapsulating siRNA.

    Science.gov (United States)

    De Rosa, Giuseppe; Salzano, Giuseppina

    2015-01-01

    The therapeutic use of small interfering RNA (siRNA) represents a new and powerful approach to suppress the expression of pathologically genes. However, biopharmaceutical drawbacks, such as short half-life, poor cellular uptake, and unspecific distribution into the body, hamper the development of siRNA-based therapeutics. Poly(lactide-co-glycolide), (PLGA) microspheres can be a useful tool to overcome these issues. siRNA can be encapsulated into the PLGA microspheres, which protects the loaded nucleic acid against the enzymatic degradation. Moreover, PLGA microspheres can be injected directly into the action site, where the siRNA can be released in controlled manner, thus avoiding the need of frequent invasive administrations. The complete biodegradability of PLGA to monomers easily metabolized by the body, and its approval by FDA and EMA for parenteral administration, assure the safety of this copolymer and do not require the removal of the device after the complete drug release. In chapter, a basic protocol for the preparation of PLGA microspheres encapsulating siRNA is described. This protocol is based on a double emulsion/solvent evaporation technique, a well known and easy to reproduce method. This specific protocol has been developed to encapsulate a siRNA anti-TNFα in PLGA microspheres, and it has been designed and optimized to achieve high siRNA encapsulation efficiency and slow siRNA release in vitro. However, it can be extended also to other siRNA as well as other RNA or DNA-based oligonucleotides (miRNA, antisense, decoy, etc.). Depending on the applications, chemical modifications of the backbone and site-specific modification within the siRNA sequences could be required.

  5. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  6. Investigation on The Properties of Fe-Si3N4 Bonded SiC Composite

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; FENG Di; PENG Dayan

    2005-01-01

    The mechanical properties of pressureless sintering Fe-Si3N4 bonded SiC and Si3 N4 bonded SiC with same manufacture process have been compared in this paper.The oxidizing mechanism of Fe-Si3 N4 bonded SiC ceramic matrix composite has been investigated especially through TG-DSC (thermo gravimetric analysis-differential scanning calorimeter) experiment. During oxidation procedure the main reaction is the oxidation of SiC and Si3N4, SiO2 which form protecting film to prevent further oxidizing. And residual iron in the samples become Fe2 O3 and Fe3O4, the oxidation kinetics at 1100 ~ 1300℃ of re-Si3 N4 bonded SiC has been studied especially. The weight gain per unit area at initial stage changes according to beeline rule, in the middle according to conic, and in the last oxidation period follows parabola rule.

  7. Fabrication and measurement of devices in Si/SiGe nanomembranes

    Science.gov (United States)

    Mohr, Robert

    Silicon/silicon-germanium (Si/SiGe) heterostructures are useful as hosts for gated quantum dots. The quality of the as-grown Si/SiGe heterostructure has a large impact on the final quality of the quantum dot as a qubit host. For many years, quantum dots have been fab- ricated on strain-graded heterostructures. Commonly used strain-graded heterostructures inevitably develop plastic defects that lead to interface roughness, crosshatch, and mosaic tilt. All of these factors are sources of disorder in Si/SiGe quantum electronics. In this dissertation, I report the fabrication of Hall bars and gated quantum dots on heterostructures grown on fully elastically relaxed SiGe nanomembranes, rather than strain-graded heterostructures. I report measurements of Hall bars demonstrating the creation of two-dimensional electron gases in these structures. I report the fabrication procedures used to create pairs of Hall bars and quantum dots on individual membranes. In addition, I explain a general process flow for the creation of Si/SiGe quantum devices. I focus especially on an ion-implantation technique I implemented for the fabrication of Hall bars and quantum dots in Si/SiGe heterostructures without modulation doping layers.

  8. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    Science.gov (United States)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  9. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  10. 2D SiC/SiC composite for flow channel insert (FCI) application

    Energy Technology Data Exchange (ETDEWEB)

    Yu Haijiao [Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, 47 Yanwachi Street, Changsha 410073 (China); Zhou Xingui, E-mail: zhouxinguilmy@163.com [Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, 47 Yanwachi Street, Changsha 410073 (China); Wang Honglei; Zhao Shuang [Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, 47 Yanwachi Street, Changsha 410073 (China); Wu Yican; Huang Qunying; Zhu Zhiqiang [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Huang Zelan [Chongyi Zhangyuan Tungsten Co. Ltd., Chongyi 341300 (China)

    2010-12-15

    Two-dimensional (2D) silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite suiting for flow channel insert (FCI) application was successfully fabricated by stacking molding-precursor impregnation and pyrolysis (PIP) process. Plain-woven KD-I SiC fiber fabric was used as the reinforcement. SiC coating was deposited as the fiber/matrix interphase layer by chemical vapor deposition (CVD) technique. Mechanical, thermal and electrical properties of the 2D SiC/SiC composite were investigated. The results show that mechanical properties and through thickness thermal conductivity of the 2D KD-I/PIP SiC composite well meet the FCI application requirements; meanwhile, it seems that the electrical conductivity requirement will also be satisfied with a series of improvements.

  11. Synthesis of nickel catalyzed Si/SiC core-shell nanowires by HWCVD

    Science.gov (United States)

    Tong Goh, Boon; Abdul Rahman, Saadah

    2014-12-01

    Si/SiC core-shell nanowires grown on glass substrates by hot-wire chemical vapor deposition were studied. Nickel was used as a catalyst to initiate the growth of these core-shell nanowires and the nanowires were grown at different deposition pressures of 0.5 and 1 mbar. The core of the nanowire was found to be a single crystalline Si. The shell of the nanowire consisted of Si nano-crystallites embedded within an amorphous SiC matrix which was attributed to a radial growth of columnar structures. The Si and SiC nano-crystallites embedded within an amorphous matrix exhibited room-temperature photoluminescence emissions in the range of 400 nm-1 μm. A vapor-solid-solid growth mechanism of these core-shell nanowires is proposed. The effects of the deposition pressure on the properties of the core-shell nanowires are also discussed.

  12. A low temperature processed Si-quantum-dot poly-Si TFT nonvolatile memory device

    Institute of Scientific and Technical Information of China (English)

    Sun Wei

    2013-01-01

    This paper reports on a successful demonstration of poly-Si TFT nonvolatile memory with a much reduced thermal-budget.The TFT uses uniform Si quantum-dots (size ~10 nm and density ~1011 cm-2) asstorage media,obtained via LPCVD by flashing SiH4/H2 at 580 ℃ for 15 s on a Si3N4 surface.The poly-Si grain-enlargement step was shifted after source/drain formation.The NiSix-silicided source/drain enables a fast lateral-recrystallization,and thus grain-enlargement can be accomplished by a much reduced thermal-cycle (i.e.,550 ℃/4 h).The excellent memory characteristics suggest that the proposed poly-Si TFT Si quantum-dot memory and associated processes are promising for use in wider TFT applications,such as system-on-glass.

  13. Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Strained SiGe/Si multiple quantum wells (MQWs) were grown by cold-wall ultrahigh vacuum chemical vapor deposition (UHV/CVD). Photoluminescence measurement was performed to study the exciton energies of strained Si0.84 Ge0.16/Si MQWs with SiGe well widths ranging from 4.2nm to 25.4nm. The confinement energy of 43meV is found in the Si0.84Ge0.16/Si MQWs with well width of 4.2nm. The confinement energy was calculated by solving the problem of a particle confined in a single finite rectangular poteintial well using one band effect mass model. Experimental and theoretical confinement energies are in good agreement

  14. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  15. Transport properties of double-gate SiO{sub 2}-Si-SiO{sub 2} quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Prunnila, Mika; Ahopelto, Jouni [VTT Information Technology, Microelectronics, P.O. Box 1208, 02044 VTT (Finland); Sakaki, Hiroyuki [University of Tokyo, Institute of Industrial Science, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503 (Japan)

    2005-05-01

    We report on fabrication and low temperature transport properties of double-gate SiO{sub 2}-Si-SiO{sub 2} quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon-on-insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si-SiO{sub 2} interface peak mobility of 1.9 m{sup 2}/Vs (1.0 m{sup 2}/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub-band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi-layers. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

    Directory of Open Access Journals (Sweden)

    Yorinobu Kunimune

    2016-04-01

    Full Text Available We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO stack structure using ultraviolet laser-assisted atom probe tomography (APT. The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %. Thus, by subtracting the concentration of adsorbed hydrogen, the actual hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA, which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale.

  17. Effect of strontium on primary dendrite and eutectic temperature of A357 aluminum alloy

    Directory of Open Access Journals (Sweden)

    Chen Zhongwei

    2010-05-01

    Full Text Available Solidification process of A357 alloy with Sr addition was investigated in this paper. In particular, the effects of strontium and cooling rate on α-Al dendrite and Al-Si eutectic characteristic temperature were characterized by differential thermal analysis (DTA. Sr addition not only modifies the Al-Si eutectic, but also affects the morphology and structure of primary α-Al dendrite. Sr decreases the growth temperature of α-Al dendrite and Al-Si eutectic, and it also affects the dendrite growth mechanism. It has been found that such effect becomes more significant with higher cooling rate.

  18. Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer

    Science.gov (United States)

    Jia, Xiao-Jie; Zhou, Chun-Lan; Zhu, Jun-Jie; Zhou, Su; Wang, Wen-Jing

    2016-12-01

    It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076).

  19. Practical wiring in SI units

    CERN Document Server

    Miller, Henry A

    2013-01-01

    Practical Wiring, Volume 1 is a 13-chapter book that first describes some of the common hand tools used in connection with sheathed wiring. Subsequent chapters discuss the safety in wiring, cables, conductor terminations, insulating sheathed wiring, conductor sizes, and consumer's control equipments. Other chapters center on socket outlets, plugs, lighting subcircuits, lighting accessories, bells, and primary and secondary cells. This book will be very valuable to students involved in this field of interest.

  20. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    Science.gov (United States)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  1. Improvement in mechanical properties of hypereutectic Al-Si-Cu alloys through sono-solidified

    Directory of Open Access Journals (Sweden)

    Yoshiki Tsunekawa

    2014-07-01

    Full Text Available For the wider applications, it is necessary to improve the ductility as well as the strength and wear-resistance of hypereutectic Al-Si-Cu alloys, which are typical light-weight wear-resistant materials. An increase in the amounts of primary silicon particles causes the modified wear-resistance of hypereutectic Al-Si-Cu alloys, but leads to the poor strength and ductility. It is known that dual phase steels composed of hetero-structure have succeeded in bringing contradictory mechanical properties of high strength and ductility concurrently. In order to apply the idea of hetero-structure to hypereutectic Al-Si-Cu alloys for the achievement of high strength and ductility along with wear resistance, ultrasonic irradiation of the molten metal during the solidification, which is called sono-solidification, was carried out from its molten state to just above the eutectic temperature. The sono-solidified Al-17Si-4Cu alloy is composed of hetero-structure, which are, hard primary silicon particles, soft non-equilibrium a -Al phase and the eutectic region. Rheo-casting was performed at just above the eutectic temperature with sono-solidified slurry to shape a disk specimen. After the rheo-casting with modified sonosolidified slurry held for 45 s at 570 篊, the quantitative optical microscope observation exhibits that the microstructure is composed of 18area% of hard primary silicon particles and 57area% of soft a -Al phase. In contrast, there exist only 5 area% of primary silicon particles and no a -Al phase in rheo-cast specimen with normally solidified slurry. Hence the tensile tests of T6 treated rheo-cast specimens with modified sono-solidified slurry exhibit improved strength and 5% of elongation, regardless of having more than 3 times higher amounts of primary silicon particles compared to that of rheo-cast specimen with normally solidified slurry.

  2. Improvement in mechanical properties of hypereutectic Al-Si-Cu alloys through sono-solidiifed slurry

    Institute of Scientific and Technical Information of China (English)

    Yoshiki Tsunekawa; Shinpei Suetsugu; Masahiro Okumiya; Naoki Nishikawa; Yoshikazu Genma

    2014-01-01

    For the wider applications, it is necessary to improve the ductility as wel as the strength and wear-resistance of hypereutectic Al-Si-Cu aloys, which are typical light-weight wear-resistant materials. An increase in the amounts of primary silicon particles causes the modiifed wear-resistance of hypereutectic Al-Si-Cu aloys, but leads to the poor strength and ductility. It is known that dual phase steels composed of hetero-structure have succeeded in bringing contradictory mechanical properties of high strength and ductility concurrently. In order to apply the idea of hetero-structure to hypereutectic Al-Si-Cu alloys for the achievement of high strength and ductility along with wear resistance, ultrasonic irradiation of the molten metal during the solidiifcation, which is caled sono-solidiifcation, was carried out from its molten state to just above the eutectic temperature. The sono-solidiifed Al-17Si-4Cu aloy is composed of hetero-structure, which are, hard primary silicon particles, soft non-equilibriuma-Al phase and the eutectic region. Rheo-casting was performed at just above the eutectic temperature with sono-solidiifed slurry to shape a disk specimen. After the rheo-casting with modiifed sono-solidiifed slurry held for 45 s at 570 ºC, the quantitative optical microscope observation exhibits that the microstructure is composed of 18area% of hard primary silicon particles and 57area% of softa-Al phase. In contrast, there exist only 5 area% of primary silicon particles and noa-Al phase in rheo-cast specimen with normaly solidiifed slurry. Hence the tensile tests of T6 treated rheo-cast specimens with modified sono-solidified slurry exhibit improved strength and 5% of elongation, regardless of having more than 3 times higher amounts of primary silicon particles compared to that of rheo-cast specimen with normaly solidiifed slurry.

  3. Abiologic silicon isotope fractionation between aqueous Si and Fe(III)-Si gel in simulated Archean seawater: Implications for Si isotope records in Precambrian sedimentary rocks

    Science.gov (United States)

    Zheng, Xin-Yuan; Beard, Brian L.; Reddy, Thiruchelvi R.; Roden, Eric E.; Johnson, Clark M.

    2016-08-01

    Precambrian Si-rich sedimentary rocks, including cherts and banded iron formations (BIFs), record a >7‰ spread in 30Si/28Si ratios (δ30Si values), yet interpretation of this large variability has been hindered by the paucity of data on Si isotope exchange kinetics and equilibrium fractionation factors in systems that are pertinent to Precambrian marine conditions. Using the three-isotope method and an enriched 29Si tracer, a series of experiments were conducted to constrain Si isotope exchange kinetics and fractionation factors between amorphous Fe(III)-Si gel, a likely precursor to Precambrian jaspers and BIFs, and aqueous Si in artificial Archean seawater under anoxic conditions. Experiments were conducted at room temperature, and in the presence and absence of aqueous Fe(II) (Fe(II)aq). Results of this study demonstrate that Si solubility is significantly lower for Fe-Si gel than that of amorphous Si, indicating that seawater Si concentrations in the Precambrian may have been lower than previous estimates. The experiments reached ˜70-90% Si isotope exchange after a period of 53-126 days, and the highest extents of exchange were obtained where Fe(II)aq was present, suggesting that Fe(II)-Fe(III) electron-transfer and atom-exchange reactions catalyze Si isotope exchange through breakage of Fe-Si bonds. All experiments except one showed little change in the instantaneous solid-aqueous Si isotope fractionation factor with time, allowing extraction of equilibrium Si isotope fractionation factors through extrapolation to 100% isotope exchange. The equilibrium 30Si/28Si fractionation between Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -2.30 ± 0.25‰ (2σ) in the absence of Fe(II)aq. In the case where Fe(II)aq was present, which resulted in addition of ˜10% Fe(II) in the final solid, creating a mixed Fe(II)-Fe(III) Si gel, the equilibrium fractionation between Fe(II)-Fe(III)-Si gel and aqueous Si (Δ30Sigel-aqueous) is -3.23 ± 0.37‰ (2σ). Equilibrium

  4. Rapid synthesis of MoSi2-Si3N4 nanocomposite via reaction milling of Si and Mo powder mixture

    Institute of Scientific and Technical Information of China (English)

    Majid Abdellahi; Alireza Amereh; Hamed Bahmanpou; and Behzad Sharafati

    2013-01-01

    The nanocomposite of MoSi2-Si3N4 (molybdenum disilicide-silicon nitride) was synthesized by reaction milling of the Mo and Si powder mixture. Changing the processing parameters led to the formation of diff erent products such asα-andβ-MoSi2, Si3N4, Mo2N, and Mo5Si3 at various milling times. A thermodynamic appraisal showed that the milling of Mo32Si68 powder mixture was associated with highly exothermic mechanically induced self-sustaining reaction (MSR) between Mo and Si. The MSR took place around 5 h of milling led to the formation ofα-MoSi2 and the reaction between Si and N2 to produce Si3N4 under a nitrogen pressure of 1 MPa. By increasing the nitrogen pressure to 5 MPa, more heat is released, resulting in the dissociation of Si3N4 and the transformation ofα-MoSi2 toβ-MoSi2. Heat treatment was also performed on the milled samples and led to the formation of Mo2N and the transformation ofα-MoSi2 toβ-MoSi2 at the milling times of 10 and 40 h, respectively.

  5. X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si

    Institute of Scientific and Technical Information of China (English)

    LIU Yan-Fang; LIU Jin-Feng; XU Peng-Shou; PAN Hai-Bin

    2007-01-01

    The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850 ℃ is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.

  6. Progress of the NTSC-F1 primary frequency standard

    Institute of Scientific and Technical Information of China (English)

    RUAN; Jun; WANG; Xinliang; LIU; Dandan; GUAN; Yong; ZHANG; Hui; CHEN; Jiang; LIN; Rui; YU; Fengxiang; SHI; Junru; ZHANG; Shougang

    2015-01-01

    The SI "second"is realized by caesium primary frequency standards( PFSs) using laser cooled atoms in a fountain configuration. Four sub systems and operation procedure of the NTSC-F1 primary frequency standard are introduced in the paper.The frequency stability of NTSC-F1 is 3.0×10-13/ τ-1 / 2compared to hydrogen maser. Four terms of frequency shift and uncertainty including second order Zeeman frequency shift,cold collision shift,gravity shift and blackbody shift are evaluated. The improvement of NTSC-F1 is introduced.

  7. Primary myelofibrosis L.

    Directory of Open Access Journals (Sweden)

    L. M. Meshcheryakova

    2014-07-01

    Full Text Available Literature data of idiopathic myelofibrosis are presented: classification, diagnostic criteria, morphological and molecular features. Particular attention is given to therapy of various clinical forms of primary myelofibrosis.

  8. Primary meningeal rhabdomyosarcoma.

    Science.gov (United States)

    Palta, Manisha; Riedel, Richard F; Vredenburgh, James J; Cummings, Thomas J; Green, Scott; Chang, Zheng; Kirkpatrick, John P

    2011-01-01

    Primary meningeal rhabdomyosarcoma is a rare primary brain malignancy, with scant case reports. While most reports of primary intracranial rhabdomyosarcoma occur in pediatric patients, a handful of cases in adult patients have been reported in the medical literature. We report the case of a 44-year-old male who developed primary meningeal rhabdomyosarcoma. After developing episodes of right lower extremity weakness, word finding difficulty, and headaches, a brain magnetic resonance imaging (MRI) demonstrated a vertex lesion with radiographic appearance of a meningeal-derived tumor. Subtotal surgical resection was performed due to sagittal sinus invasion and initial pathology was interpreted as an anaplastic meningioma. Re-review of pathology demonstrated rhabdomyosarcoma negative for alveolar translocation t(2;13). Staging studies revealed no evidence of disseminated disease. He was treated with stereotactic radiotherapy with concurrent temozolamide to be followed by vincristine, actinomycin-D, and cyclophosphamide (VAC) systemic therapy.

  9. Primary infertility (image)

    Science.gov (United States)

    Primary infertility is a term used to describe a couple that has never been able to conceive a pregnancy ... to do so through unprotected intercourse. Causes of infertility include a wide range of physical as well ...

  10. Histoplasmosis - acute (primary) pulmonary

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/article/000098.htm Histoplasmosis - acute (primary) pulmonary To use the sharing features on this page, please enable JavaScript. Acute pulmonary histoplasmosis is a respiratory infection that is caused by ...

  11. Primary Amoebic Meningoencephalitis

    National Research Council Canada - National Science Library

    Gupta, Ritu; Parashar, M K; Kale, Aditya

    2015-01-01

    Primary amoebic meningoencephalitis due to free living amoeba, also called 'brain eating amoeba', Naegleria fowleri, was detected in retroviral disease patient of 40 years who has history of using well water...

  12. Primary Meningeal Rhabdomyosarcoma

    Directory of Open Access Journals (Sweden)

    Manisha Palta

    2011-01-01

    Full Text Available Primary meningeal rhabdomyosarcoma is a rare primary brain malignancy, with scant case reports. While most reports of primary intracranial rhabdomyosarcoma occur in pediatric patients, a handful of cases in adult patients have been reported in the medical literature. We report the case of a 44-year-old male who developed primary meningeal rhabdomyosarcoma. After developing episodes of right lower extremity weakness, word finding difficulty, and headaches, a brain magnetic resonance imaging (MRI demonstrated a vertex lesion with radiographic appearance of a meningeal-derived tumor. Subtotal surgical resection was performed due to sagittal sinus invasion and initial pathology was interpreted as an anaplastic meningioma. Re-review of pathology demonstrated rhabdomyosarcoma negative for alveolar translocation t(2;13. Staging studies revealed no evidence of disseminated disease. He was treated with stereotactic radiotherapy with concurrent temozolamide to be followed by vincristine, actinomycin-D, and cyclophosphamide (VAC systemic therapy.

  13. ESTHETICS IN PRIMARY TEETH

    National Research Council Canada - National Science Library

    Mathew Renu Ann

    2013-01-01

    .... Esthetic restoration of primary anterior teeth can be especially challenging due to the small size of the teeth, close proximity of pulp to tooth surface, relatively thin enamel and surface area...

  14. An siRNA-based functional genomics screen for the identification of regulators of ciliogenesis and ciliopathy genes

    NARCIS (Netherlands)

    Wheway, Gabrielle; Schmidts, Miriam; Mans, Dorus A; Szymanska, Katarzyna; Nguyen, Thanh-Minh T; Racher, Hilary; Phelps, Ian G; Toedt, Grischa; Kennedy, Julie; Wunderlich, Kirsten A; Sorusch, Nasrin; Abdelhamed, Zakia A; Natarajan, Subaashini; Herridge, Warren; van Reeuwijk, Jeroen; Horn, Nicola; Boldt, Karsten; Parry, David A; Letteboer, Stef J F; Roosing, Susanne; Adams, Matthew; Bell, Sandra M; Bond, Jacquelyn; Higgins, Julie; Morrison, Ewan E; Tomlinson, Darren C; Slaats, Gisela G; van Dam, Teunis J P; Huang, Lijia; Kessler, Kristin; Giessl, Andreas; Logan, Clare V; Boyle, Evan A; Shendure, Jay; Anazi, Shamsa; Aldahmesh, Mohammed; Al Hazzaa, Selwa; Hegele, Robert A; Ober, Carole; Frosk, Patrick; Mhanni, Aizeddin A; Chodirker, Bernard N; Chudley, Albert E; Lamont, Ryan; Bernier, Francois P; Beaulieu, Chandree L; Gordon, Paul; Pon, Richard T; Donahue, Clem; Barkovich, A James; Wolf, Louis; Toomes, Carmel; Thiel, Christian T; Boycott, Kym M; McKibbin, Martin; Inglehearn, Chris F; Stewart, Fiona; Omran, Heymut; Huynen, Martijn A; Sergouniotis, Panagiotis I; Alkuraya, Fowzan S; Parboosingh, Jillian S; Innes, A Micheil; Willoughby, Colin E; Giles, Rachel H|info:eu-repo/dai/nl/173658725; Webster, Andrew R; Ueffing, Marius; Blacque, Oliver; Gleeson, Joseph G; Wolfrum, Uwe; Beales, Philip L; Gibson, Toby; Doherty, Dan; Mitchison, Hannah M; Roepman, Ronald; Johnson, Colin A

    2015-01-01

    Defects in primary cilium biogenesis underlie the ciliopathies, a growing group of genetic disorders. We describe a whole-genome siRNA-based reverse genetics screen for defects in biogenesis and/or maintenance of the primary cilium, obtaining a global resource. We identify 112 candidate ciliogenesis

  15. An siRNA-based functional genomics screen for the identification of regulators of ciliogenesis and ciliopathy genes

    NARCIS (Netherlands)

    Wheway, Gabrielle; Schmidts, Miriam; Mans, Dorus A; Szymanska, Katarzyna; Nguyen, Thanh-Minh T; Racher, Hilary; Phelps, Ian G; Toedt, Grischa; Kennedy, Julie; Wunderlich, Kirsten A; Sorusch, Nasrin; Abdelhamed, Zakia A; Natarajan, Subaashini; Herridge, Warren; van Reeuwijk, Jeroen; Horn, Nicola; Boldt, Karsten; Parry, David A; Letteboer, Stef J F; Roosing, Susanne; Adams, Matthew; Bell, Sandra M; Bond, Jacquelyn; Higgins, Julie; Morrison, Ewan E; Tomlinson, Darren C; Slaats, Gisela G; van Dam, Teunis J P; Huang, Lijia; Kessler, Kristin; Giessl, Andreas; Logan, Clare V; Boyle, Evan A; Shendure, Jay; Anazi, Shamsa; Aldahmesh, Mohammed; Al Hazzaa, Selwa; Hegele, Robert A; Ober, Carole; Frosk, Patrick; Mhanni, Aizeddin A; Chodirker, Bernard N; Chudley, Albert E; Lamont, Ryan; Bernier, Francois P; Beaulieu, Chandree L; Gordon, Paul; Pon, Richard T; Donahue, Clem; Barkovich, A James; Wolf, Louis; Toomes, Carmel; Thiel, Christian T; Boycott, Kym M; McKibbin, Martin; Inglehearn, Chris F; Stewart, Fiona; Omran, Heymut; Huynen, Martijn A; Sergouniotis, Panagiotis I; Alkuraya, Fowzan S; Parboosingh, Jillian S; Innes, A Micheil; Willoughby, Colin E; Giles, Rachel H; Webster, Andrew R; Ueffing, Marius; Blacque, Oliver; Gleeson, Joseph G; Wolfrum, Uwe; Beales, Philip L; Gibson, Toby; Doherty, Dan; Mitchison, Hannah M; Roepman, Ronald; Johnson, Colin A

    2015-01-01

    Defects in primary cilium biogenesis underlie the ciliopathies, a growing group of genetic disorders. We describe a whole-genome siRNA-based reverse genetics screen for defects in biogenesis and/or maintenance of the primary cilium, obtaining a global resource. We identify 112 candidate ciliogenesis

  16. Effect of hydrogen on passivation quality of SiN{sub x}/Si-rich SiN{sub x} stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Thi, Trinh Cham, E-mail: s1240009@jaist.ac.jp; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-30

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN{sub x}/Si-rich SiN{sub x} stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10{sup 12} cm{sup −2}, which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN{sub x} films deposited with H{sub 2} dilution show better passivation quality of SiN{sub x}/Si-rich SiN{sub x} stacked layers than those prepared without H{sub 2} dilution. Effective minority carrier lifetime (τ{sub eff}) in c-Si passivated by SiN{sub x}/Si-rich SiN{sub x} stacked layers is as high as 5.1 ms when H{sub 2} is added during Si-rich SiN{sub x} deposition, which is much higher than the case of using Si-rich SiN{sub x} films prepared without H{sub 2} dilution showing τ{sub eff} of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN{sub x}/SiN{sub x} stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H{sub 2} gas during Si-rich SiN{sub x} film deposition greatly enhances effective minority carrier lifetime (τ{sub eff}). • For a Si-rich SiN{sub x} film with refractive index of 2.92, τ{sub eff} improves from 3.3 to 5.1 ms by H{sub 2} addition.

  17. p-Cu2O/SiO x /n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiO x

    Science.gov (United States)

    Yamashita, Atsushi; Tsukamoto, Takahiro; Suda, Yoshiyuki

    2016-12-01

    We investigated low-temperature fabrication processes for our previously proposed pn memory diode with a p-Cu2O/SiC x O y /n-SiC/n-Si structure having resistive nonvolatile memory and rectifying behaviors suitable for a cross-point memory array with the highest theoretical density. In previous fabrication processes, n-SiC was formed by sputtering at 1113 K, and SiC x O y and p-Cu2O were formed by the thermal oxidation of n-SiC and Cu at 1073 and 473 K, respectively. In this study, we propose a pn memory diode with a p-Cu2O/SiO x /n-SiC/n-Si structure, where n-SiC and SiO x layers are deposited by sputtering at room temperature. The proposed processes enable the fabrication of the pn memory diode at temperatures of not more than 473 K, which is used for the formation of p-Cu2O. This memory diode exhibits good nonvolatile memory and rectifying characteristics. These proposed low-temperature fabrication processes are expected to expand the range of fabrication processes applicable to current LSI fabrication processes.

  18. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal.

    Science.gov (United States)

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-04-20

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates.

  19. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal

    Science.gov (United States)

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-04-01

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates.

  20. Primary headache disorders.

    Science.gov (United States)

    Benoliel, Rafael; Eliav, Eli

    2013-07-01

    Primary headache disorders include migraine, tension-type headaches, and the trigeminal autonomic cephalgias (TACs). "Primary" refers to a lack of clear underlying causative pathology, trauma, or systemic disease. The TACs include cluster headache, paroxysmal hemicrania, and short-lasting neuralgiform headache attacks with conjunctival injection and tearing; hemicrania continua, although classified separately by the International Headache Society, shares many features of both migraine and the TACs. This article describes the features and treatment of these disorders.

  1. Si microchannel plates for image intensification

    Science.gov (United States)

    Smith, Arlynn W.; Beetz, Charles P., Jr.; Boerstler, Robert W.; Winn, D. R.; Steinbeck, John W.

    2000-11-01

    Glass microchannel plates (MCPs) have been in use by numerous manufactuers in a variety of electron multiplication applications. Conventional fabrication of MCPs follow the lines of glass drawing and etching technology. Core and clad glass are drawn together, stacked, drawn again, and finally stacked in the desired pattern. The soluble core is removed with wet chemical processing. These techniques are beginning to run into their feasible limits in terms of channel size, open area ratio, uniformity, and material issues. A strong desire exists to fabricate MCPs with accepted lithographic techniques using Si as the base material to improve uniformity and throughput. Open area ratios of as high as 95% have been achieved using lithography. However, attempts to meet other channel plate characteristics met with little success due to thermal runaway or arcing during operation, high voltage is required for electron gain. Processing improvements have lead to the complete oxidation of the Si matrix eliminating the conducting Si in the channel walls of the Si MCPs allowing high voltages to be supported. Complete oxidation of the Si to silica allows processing temperatures high than conventional glass matrices can withstand. This fact allows for high temperature growth of conductive and secondary emissive materials on the channel walls of the structure. Si MCPs with gain have now been fabricated and tested with voltages comparable to conventional glass MCPs. Channel plate characteristics such as operating voltage, strip current, and gain for Si MCPs will be presented and compared to glass MCPs.

  2. The modification behaviour for Si implanted PET

    Institute of Scientific and Technical Information of China (English)

    吴瑜光; 张通和; 刘安东; 张旭; 周固

    2003-01-01

    Polyethylene terephthalate (PET) has been modified by Si ion implantation with a dose ranging from 1 × 1016 to 2 × 1017 ions /cm2 using a metal vapor vacuum arc(MEVVA)source. The surface morphology was observed by atomic force microscopy (AFM). The change in the microstructure of Si implanted PET was observed with a transmission electron microscope (TEM). It is believed that the change would improve the conductive properties and wear resistance. The electrical properties of PET have been improved via Si ion implantation. The resistivity of implanted PET decreased obviously with an increase in ion dose. When Si ion dose was 2 × 1017 cm?2, the resistivity of PET could be less than 7.9 Ω@m. The surface hardness and modulus increased obviously. The mechanical property of the implanted PET has been modified greatly. The hardness and modulus of Si implanted PET with a dose of 2 × 1017/cm2 are 12.5 and 2.45 times greater than those of pristine PET, respectively. The area of cutting groove for Si implanted PET is narrower and shallower than those of the unimplanted PET. So the wear resistance is greatly raised. In comparison with metal ion implantation, the improvement of mechanical properties is obvious in ion implantation into PET. Si ion beam modification mechanism of PET is discussed.

  3. Electronic structure, charge distribution, and charge transfer in α- and β-Si3N4 and at the Si(111)/Si3N4(001) interface

    Science.gov (United States)

    Zhao, G. L.; Bachlechner, M. E.

    1997-02-01

    The electronic structure, charge distribution, and charge transfer in α- and β- Si3N4 and at the Si(111)/Si3N4(001) interface have been studied using a self-consistent first-principles LCAO method. The calculated charge transfer suggests that both in α- and β-phases, the ionic formula may be written as Si3+1.24N4-0.93. For the Si(111)/Si3N4(001) interface, the silicon atoms from the Si(111) side give some electrons to the N atoms of Si3N4 forming the Si-N bonds at the interface. One Si-N bond is associated with a charge transfer of about 0.31 electrons.

  4. Readout electronics for the SiPM tracking plane in the NEXT-1 prototype

    Energy Technology Data Exchange (ETDEWEB)

    Herrero, V. [Instituto de Instrumentacion para Imagen Molecular I3M (Centro mixto CSIC-Universitat Politecnica de Valencia-CIEMAT), 46022 Valencia (Spain); Toledo, J., E-mail: jtoledo@eln.upv.es [Instituto de Instrumentacion para Imagen Molecular I3M (Centro mixto CSIC-Universitat Politecnica de Valencia-CIEMAT), 46022 Valencia (Spain); Catala, J.M.; Esteve, R. [Instituto de Instrumentacion para Imagen Molecular I3M (Centro mixto CSIC-Universitat Politecnica de Valencia-CIEMAT), 46022 Valencia (Spain); Gil, A.; Lorca, D. [Instituto de Fisica Corpuscular (CSIC-Universidad de Valencia), 46980 Valencia (Spain); Monzo, J.M.; Sanchis, F. [Instituto de Instrumentacion para Imagen Molecular I3M (Centro mixto CSIC-Universitat Politecnica de Valencia-CIEMAT), 46022 Valencia (Spain); Verdugo, A. [CIEMAT-Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain)

    2012-12-11

    NEXT is a new experiment to search for neutrinoless double beta decay using a 100 kg radio-pure high-pressure gaseous xenon TPC with electroluminescence readout. A large-scale prototype with a SiPM tracking plane has been built. The primary electron paths can be reconstructed from time-resolved measurements of the light that arrives to the SiPM plane. Our approach is to measure how many photons have reached each SiPM sensor each microsecond with a gated integrator. We have designed and tested a 16-channel front-end board that includes the analog paths and a digital section. Each analog path consists of three different stages: a transimpedance amplifier, a gated integrator and an offset and gain control stage. Measurements show good linearity and the ability to detect single photoelectrons.

  5. Dermatomal Organization of SI Leg Representation in Humans: Revising the Somatosensory Homunculus.

    Science.gov (United States)

    Dietrich, Caroline; Blume, Kathrin R; Franz, Marcel; Huonker, Ralph; Carl, Maria; Preißler, Sandra; Hofmann, Gunther O; Miltner, Wolfgang H R; Weiss, Thomas

    2017-01-23

    Penfield and Rasmussen's homunculus is the valid map of the neural body representation of nearly each textbook of biology, physiology, and neuroscience. The somatosensory homunculus places the foot representation on the mesial surface of the postcentral gyrus followed by the representations of the lower leg and the thigh in superio-lateral direction. However, this strong homuncular organization contradicts the "dermatomal" organization of spinal nerves. We used somatosensory-evoked magnetic fields and source analysis to study the leg's neural representation in the primary somatosensory cortex (SI). We show that the representation of the back of the thigh is located inferior to the foot's representation in SI whereas the front of the thigh is located laterally to the foot's representation. This observation indicates that the localization of the leg in SI rather follows the dermatomal organization of spinal nerves than the typical map of neighboring body parts as depicted in Penfield and Rasmussen's illustration of the somatosensory homunculus.

  6. Teaching primary care obstetrics

    Science.gov (United States)

    Koppula, Sudha; Brown, Judith B.; Jordan, John M.

    2014-01-01

    Abstract Objective To explore the experiences and recommendations for recruitment of family physicians who practise and teach primary care obstetrics. Design Qualitative study using in-depth interviews. Setting Six primary care obstetrics groups in Edmonton, Alta, that were involved in teaching family medicine residents in the Department of Family Medicine at the University of Alberta. Participants Twelve family physicians who practised obstetrics in groups. All participants were women, which was reasonably representative of primary care obstetrics providers in Edmonton. Methods Each participant underwent an in-depth interview. The interviews were audiotaped and transcribed verbatim. The investigators independently reviewed the transcripts and then analyzed the transcripts together in an iterative and interpretive manner. Main findings Themes identified in this study include lack of confidence in teaching, challenges of having learners, benefits of having learners, and recommendations for recruiting learners to primary care obstetrics. While participants described insecurity and challenges related to teaching, they also identified positive aspects, and offered suggestions for recruiting learners to primary care obstetrics. Conclusion Despite describing poor confidence as teachers and having challenges with learners, the participants identified positive experiences that sustained their interest in teaching. Supporting these teachers and recruiting more such role models is important to encourage family medicine learners to enter careers such as primary care obstetrics. PMID:24627402

  7. Primary biliary cirrhosis: Report

    Directory of Open Access Journals (Sweden)

    Filipović Branka

    2002-01-01

    Full Text Available Chronic non-suppurative destructive cholangitis, the so-called primary biliary cirrhosis, is characterised by changes, which occur in intrahepatic bile ducts in early stages and in hepatic parenchyma as the disease progresses. The disease gradually evolves into the full-blown picture of biliary cirrhosis. Primary biliary cirrhosis predominantly affects women between 35 and 60 years of age in all social classes and in all races. Our patient was a woman, old 78 years old who admitted for treatment of hypertrophie cardiomyopathy. During the routine laboratory exploration signs of cholestasis were noted: higher values of alkaline phosphatase and gamma glutamyl transferase, combined with low level of platelets, probably of autoimmune origin. Hypercholesterolaemia (7.8 mmol/L associated with normal values of triglycerides was observed. The main criterion for establishing the diagnosis of primary biliary cirrhosis was the titer of antimito-chondrial antibodies in the serum, which was 1:640. At the same time, she had a urinary infection, caused by Escherichia coli, which confirmed possible relationship between primary biliary cirrhosis and occurence of some Gramm negative bacteria, reported elsewhere. On the other hand, biopsy of the liver was just an auxiliary method, serving for the confirmation of diagnosis. Ursodeoxycholic acid was used as the main drug in the therapy of primary biliary cirrhosis. This case of primary biliary cirrhosis is a worth report because of the comorbidity with cardiac symptoms, which were covering symptoms of hepatic disorder.

  8. Interstitial Functionalization in elemental Si

    Science.gov (United States)

    Kiefer, Boris; Fohtung, Edwin

    Societies in the 21st century will face many challenges. Materials science and materials design will be essential to address and master some if not all of these challenges. Semiconductors are among the most important technological material classes. Properties such as electrical transport are strongly affected by defects and a central goal continues to be the reduction of defect densities as much as possible in these compounds. Here we present results of interstitial Fe doping in elemental Si using first-principles DFT calculations. The preliminary results show that Fe will only occupy octahedral interstitial sites. The analysis of the electronic structure shows that the compounds are ferromagnetic and that a bandgap opens as interstitial Fe concentrations decrease, with a possible intermittent semi-metallic phase. The formation energy for interstitial Fe is unfavorable, as expected, by ~1.5 eV but becomes favorable as the chemical potential of Fe increases. Therefore, we expect that biasing the system with an external electrical field will lead to the formation of these materials. Thus, our results show that interstitial defects can be beneficial for the design of functionalities that differ significantly from those of the host material.

  9. EpCAM Aptamer-siRNA Chimera Targets and Regress Epithelial Cancer.

    Directory of Open Access Journals (Sweden)

    Nithya Subramanian

    Full Text Available Epithelial cell adhesion molecule (EpCAM, a cancer stem cell (CSC marker is over expressed in epithelial cancers and in retinoblastoma (RB. We fabricated an EpCAM targeting aptamer-siRNA chimera and investigated its anti-tumor property and EpCAM intracellular domain (EpICD mediated signaling in epithelial cancer. The anti-tumor efficacy of EpCAM aptamer-siEpCAM chimera (EpApt-siEp was evaluated by qPCR, northern and Western blotting in WERI-Rb1- RB cell line, primary RB tumor cells and in MCF7- breast cancer cell line. Anti-tumor activity of EpApt-siEp was studied in vivo using epithelial cancer (MCF7 mice xenograft model. The mechanism and pathways involved in the anti-tumor activity was further studied using protein arrays and qPCR. EpApt-siEp chimera was processed in vitro by dicer enzyme. Treatment of the WERI-Rb1 and MCF7 cells with EpApt-siEp revealed statistically significant down regulation of EpCAM expression (P<0.005 and concomitant reduction in cellular proliferation. In primary RB cells cultured from RB tumors, EpApt-siEp silenced EpCAM, significantly inhibited (P<0.01 cell proliferation and induced cytotoxicity. Knockdown of EpICD expressed in RB primary tumors led to repression of pluripotency markers, SOX2, OCT4, NANOG, and CD133. In vivo studies showed complete tumor growth regression without any toxicity in animals (P<0.001 and tumor tissues showed significant downregulation (P<0.05 of EpCAM, MRP1, ABCG2, stathmin, survivin and upregulation of ATM (P<0.05 leading to apoptosis by intrinsic pathway with minor alteration in cytokines. Our results revealed that EpApt-siEp potentially eradicated EpCAM positive cancer cells through CSC marker suppression and apoptosis, while sparing normal EpCAM negative adjacent cells.

  10. Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides.

    Science.gov (United States)

    Maegami, Yuriko; Okano, Makoto; Cong, Guangwei; Ohno, Morifumi; Yamada, Koji

    2016-07-25

    For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO2 spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-μm mode field diameter. A coupled waveguide system with the SiN waveguide and Si taper waveguide can provide low-loss and low-polarization-dependent mode conversion. Both losses in fiber-SiN waveguide coupling and SiN-Si waveguide mode conversion are no more than 1 dB in a wide wavelength bandwidth from 1.36 μm to 1.65 μm. Through a detailed analysis of the effective refractive indices in the coupled waveguide system, we can understand mode conversion accurately and also derive guidelines for reducing the polarization dependence and for shortening device length.

  11. HREM study on stacking structure of SiGe/Si infrared detector

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Stacking structure and defects in SiGe/P-Si infrared detector were studied by using localization high resolutionelectron microscopy (HREM). The photosensitive region in the detector consists of 3 P+-Si0.65 Ge0.35 layers and 2 UD-Si(undoped Si) layers. The interface between Si0.65 Ge0.35 and UD-Si is not sharp and has a transition zone with non-uniform contrast. The misfit stress of interface is distributed gradiently along the normal direction of the interface. Thereforethe crystal defects and serious lattice deformations on the interface have not been found. A defect area with a shape of in-verted triangle exists in the edge of photosensitive region. The main types of the defects in the area are stacking faults andmicrotwins. The stacking faults are on ( 1 11), and the thickness of the most microtwins is less than 4 interplanar spacingand the twin plane is (111). The Si0.65Ge0.35 and UD-Si layers on amorphous SiO2 layer consist of polycrystals grown byrandom nueleation, and are in wave

  12. Formation of light-emitting Si nanostructures in SiO(2) by pulsed anneals.

    Science.gov (United States)

    Kachurin, G A; Cherkova, S G; Marin, D V; Yankov, R A; Deutschmann, M

    2008-09-03

    Intense excimer laser pulses, flash lamp annealing and rapid thermal annealing were used to form Si nanocrystals in thin SiO(2) layers implanted with high doses of Si ions. The pulse durations were 20 ns, 20 ms and 1 s, respectively. Laser annealing produced light sources luminescing in the wavelength range of 400-600 nm. They were attributed to the Si clusters formed as a result of the fast segregation of Si atoms from the SiO(2) network. There were no indications of nanocrystal formation in the as-implanted layers after 20 ns laser pulses; however, nanocrystals formed when, before the laser annealing, the amorphous Si nanoprecipitates were prepared in the oxide layers. Evaluations show that the crystallization may proceed via melting. A photoluminescence band near 800 nm, typical of Si nanocrystals, was found after 20 ms and 1 s anneals. Calculations revealed that the annealing times in both cases were too short to provide the diffusion-limited crystal growth if one uses the values of stationary Si diffusivity in SiO(2). This points toward the existence of a transient rapid growth process at the very beginning of the anneals.

  13. Formation of light-emitting Si nanostructures in SiO{sub 2} by pulsed anneals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G A; Cherkova, S G; Marin, D V [Institute of Semiconductor Physics SO RAN, 630090 Novosibirsk (Russian Federation); Yankov, R A [Forschungszentrum Rossendorf, 01314 Dresden (Germany); Deutschmann, M [Laser Zentrum Hannover, 30419 Hannover (Germany)

    2008-09-03

    Intense excimer laser pulses, flash lamp annealing and rapid thermal annealing were used to form Si nanocrystals in thin SiO{sub 2} layers implanted with high doses of Si ions. The pulse durations were 20 ns, 20 ms and 1 s, respectively. Laser annealing produced light sources luminescing in the wavelength range of 400-600 nm. They were attributed to the Si clusters formed as a result of the fast segregation of Si atoms from the SiO{sub 2} network. There were no indications of nanocrystal formation in the as-implanted layers after 20 ns laser pulses; however, nanocrystals formed when, before the laser annealing, the amorphous Si nanoprecipitates were prepared in the oxide layers. Evaluations show that the crystallization may proceed via melting. A photoluminescence band near 800 nm, typical of Si nanocrystals, was found after 20 ms and 1 s anneals. Calculations revealed that the annealing times in both cases were too short to provide the diffusion-limited crystal growth if one uses the values of stationary Si diffusivity in SiO{sub 2}. This points toward the existence of a transient rapid growth process at the very beginning of the anneals.

  14. Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals

    Science.gov (United States)

    Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Yankov, R. A.; Deutschmann, M.

    2008-09-01

    Intense excimer laser pulses, flash lamp annealing and rapid thermal annealing were used to form Si nanocrystals in thin SiO2 layers implanted with high doses of Si ions. The pulse durations were 20 ns, 20 ms and 1 s, respectively. Laser annealing produced light sources luminescing in the wavelength range of 400-600 nm. They were attributed to the Si clusters formed as a result of the fast segregation of Si atoms from the SiO2 network. There were no indications of nanocrystal formation in the as-implanted layers after 20 ns laser pulses; however, nanocrystals formed when, before the laser annealing, the amorphous Si nanoprecipitates were prepared in the oxide layers. Evaluations show that the crystallization may proceed via melting. A photoluminescence band near 800 nm, typical of Si nanocrystals, was found after 20 ms and 1 s anneals. Calculations revealed that the annealing times in both cases were too short to provide the diffusion-limited crystal growth if one uses the values of stationary Si diffusivity in SiO2. This points toward the existence of a transient rapid growth process at the very beginning of the anneals.

  15. Wear mechanism for spray deposited Al-Si/SiCp composites under dry sliding condition

    Institute of Scientific and Technical Information of China (English)

    滕杰; 李华培; 陈刚

    2015-01-01

    Al-Si/15%SiCp (volume fraction) composites with different silicon contents were fabricated by spray deposition technique, and typical microstructures of these composites were studied by optical microscopy (OM). Dry sliding wear tests were carried out using a block-on-ring wear machine to investigate the effect of applied load range of 10−220 N on the wear and friction behavior of these composites sliding against SAE 52100 grade bearing steel. Scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDAX) were utilized to examine the morphologies of the worn surfaces in order to observe the wear characteristics and investigate the wear mechanism. The results show that the wear behavior of these composites is dependent on the silicon content in the matrix alloy and the applied load. Al-Si/15%SiCp composites with higher silicon content exhibit better wear resistance in the applied load range. Under lower loads, the major wear mechanisms are oxidation wear and abrasive wear for all tested composites. Under higher loads, severe adhesive wear becomes the main wear mechanisms for Al-7Si/15%SiCp and Al-13Si/15%SiCp composites, while Al-20Si/15%SiCp presents a compound wear mechanism, consisting of oxidation, abrasive wear and adhesion wear.

  16. Oxidation of TaSi2 thin films on polycrystalline Si

    Science.gov (United States)

    Nguyen Tan, T. A.; Guerfi, N.; Veuillen, J. Y.; Derrien, J.

    1990-01-01

    XPS and UPS have been used for studying the oxidation of TaSi2 films formed by annealing, under ultrahigh-vacuum, of Ta deposits (≈70Å) on polycrystalline Si. Oxidation has been carried out at room-temperature and at 700°C with an oxygen pressure of 2×10-5 mbar. Both Ta and Si react with oxygen. At room-temperature, O chemisorbs on the surface giving a mixed phase of Si suboxides and Ta oxides (TaO, TaO2 and Ta2O5). At 700°C, a very thin Ta2O5 layer (<0.1 monolayer) is formed on top of the growing SiO2 layer. In comparison with Si(111), the oxidation kinetics of TaSi2 begins with a higher transitory rate and follows afterwards the same parabolic dependence of the SiO2 thickness as a function of oxidation time. UPS spectra indicate a higher density of interface states, in comparison with that of SiO2 on Si. The XPS valence band testifies that the electronic structure of the underlying TaSi2 is preserved after oxidation. Subsequent heating of the sample leads to the progressive decomposition of SiO2, at T ≳ 750°C, while the upper Ta2O5 layer is not affected. The results are discussed in relation to thermodynamic properties of Si and Ta oxides, and compared with existing results given by macroscopic methods.

  17. Gene expression profiles in BCL11B-siRNA treated malignant T cells

    Directory of Open Access Journals (Sweden)

    Grabarczyk Piotr

    2011-05-01

    Full Text Available Abstract Background Downregulation of the B-cell chronic lymphocytic leukemia (CLL/lymphoma11B (BCL11B gene by small interfering RNA (siRNA leads to growth inhibition and apoptosis of the human T-cell acute lymphoblastic leukemia (T-ALL cell line Molt-4. To further characterize the molecular mechanism, a global gene expression profile of BCL11B-siRNA -treated Molt-4 cells was established. The expression profiles of several genes were further validated in the BCL11B-siRNA -treated Molt-4 cells and primary T-ALL cells. Results 142 genes were found to be upregulated and 109 genes downregulated in the BCL11B-siRNA -treated Molt-4 cells by microarray analysis. Among apoptosis-related genes, three pro-apoptotic genes, TNFSF10, BIK, BNIP3, were upregulated and one anti-apoptotic gene, BCL2L1 was downregulated. Moreover, the expression of SPP1 and CREBBP genes involved in the transforming growth factor (TGF-β pathway was down 16-fold. Expression levels of TNFSF10, BCL2L1, SPP1, and CREBBP were also examined by real-time PCR. A similar expression pattern of TNFSF10, BCL2L1, and SPP1 was identified. However, CREBBP was not downregulated in the BLC11B-siRNA -treated Molt-4 cells. Conclusion BCL11B-siRNA treatment altered expression profiles of TNFSF10, BCL2L1, and SPP1 in both Molt-4 T cell line and primary T-ALL cells.

  18. Process-Induced Carbon and Sub-Layer in SiC/BN/SiC Composites: Characterization and Consequences

    Science.gov (United States)

    Ogbuji, L. U. J. T; Wheeler, D. R.; McCue, T. R.

    2001-01-01

    Following our detection of films of elemental carbon in the Hi-Nicalon TM/BN/SiC composite and its deleterious effect on oxidative durability, we have examined other SiC/BN/SiC systems. The problem is pervasive, and significant residues of free carbon are confirmed in Sylramic /BN/SiC materials. Effective techniques for routine detection and characterization of adventitious carbon in SiC/BN/SiC composites are discussed.

  19. Growth and photoluminescence of Si-SiOx nanowires by catalyst-free chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Luo, Ruiying, E-mail: ryluo@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); School of Materials Science and Engineering, Shanxi University of Technology, Hanzhong 723000 (China); Shang, Haidong [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

    2016-04-15

    Graphical abstract: - Highlights: • The Si-SiOx NWs were successfully synthesized via a one-step catalyst-free CVD method using TEOS as the precursor. • The Si-SiOx NWs had a core–shell structure with Si as the inner crystalline cores and SiOx as the outer amorphous layer. • The formation of Si-SiOx NWs was implemented by the non-classical crystallization mechanism. • The Si-SiOx NWs spontaneously self-assembled from the building block of charged nanoparticles. • The Si-SiOx NWs showed their potential applications in UV emission and visible light emission devices. - Abstract: We developed a one-step catalyst-free chemical vapor deposition process to synthesize Si-SiOx nanowires using tetraethoxysilane as the precursor. Observations using scanning electron microscopy showed that the Si-SiOx nanowires were 20–50 nm in diameter and tens of microns in length. The high-resolution transmission electron microscope analysis and X-ray diffraction demonstrated that the nanowires consisted of crystal silicon and amorphous SiOx. The Si and O with an atomic ratio of the Si-SiOx NWs were 1:1.2 according to the energy dispersion X-ray spectroscope. A systematic study on the effect of the growth conditions, such as reaction temperature, the reaction time, and the TEOS vapor flow rate was performed. The formation of Si-SiOx nanowires was implemented by the non-classical crystallization mechanism. The charged nanoparticles acting as building blocks self-assembled into nanowires. The photoluminescence measurements were carried out and showed that the Si-SiOx nanowires emitted stable ultraviolet and green luminescence excited by ultraviolet light.

  20. Continuous theta-burst stimulation over primary somatosensory cortex modulates short-latency afferent inhibition.

    Science.gov (United States)

    Tsang, Philemon; Jacobs, Mark F; Lee, Kevin G H; Asmussen, Michael J; Zapallow, Christopher M; Nelson, Aimee J

    2014-11-01

    The present study investigated the effects of continuous theta-burst stimulation (cTBS) over primary somatosensory (SI) and motor (M1) cortices on motor-evoked potentials (MEPs) and short-latency afferent inhibition (SAI). MEPs and SAI were recorded from the first dorsal interosseous (FDI) muscle of the right hand following 30Hz cTBS over left-hemisphere SI and M1 delivered to the same participants in separate sessions. Measurements were taken before and up to 60min following cTBS. CTBS over M1 suppressed MEPs and did not alter SAI. In contrast cTBS over SI facilitated MEPs and decreased median and digital nerve evoked SAI. These findings indicate that SAI amplitude is influenced by cTBS over SI but not M1, suggesting an important role for SI in the modulation of this circuit. These data provide further evidence that cTBS over SI versus M1 has opposite effects on corticospinal excitability. To date, plasticity-inducing TMS protocols delivered over M1 have failed to modulate SAI, and the present research continues to support these findings. However, in young adults, cTBS over SI acts to reduce SAI and simultaneously increase corticospinal excitability. Future studies may investigate the potential to modulate SAI via targeting neural activity within SI. Copyright © 2014 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

  1. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  2. Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.

    Science.gov (United States)

    Chen, Xin; Zuo, Daniel; Kim, Seongwon; Mabon, James; Sardela, Mauro; Wen, Jianguo; Zuo, Jian-Min

    2014-10-01

    We demonstrate the combined use of large area depth-profiling dislocation imaging and quantitative composition and strain measurement for a strained Si/SiGe/Si sample based on nondestructive techniques of electron beam-induced current (EBIC) and X-ray diffraction reciprocal space mapping (XRD RSM). Depth and improved spatial resolution is achieved for dislocation imaging in EBIC by using different electron beam energies at a low temperature of ~7 K. Images recorded clearly show dislocations distributed in three regions of the sample: deep dislocation networks concentrated in the "strained" SiGe region, shallow misfit dislocations at the top Si/SiGe interface, and threading dislocations connecting the two regions. Dislocation densities at the top of the sample can be measured directly from the EBIC results. XRD RSM reveals separated peaks, allowing a quantitative measurement of composition and strain corresponding to different layers of different composition ratios. High-resolution scanning transmission electron microscopy cross-section analysis clearly shows the individual composition layers and the dislocation lines in the layers, which supports the EBIC and XRD RSM results.

  3. Other primary headaches

    Directory of Open Access Journals (Sweden)

    Anish Bahra

    2012-01-01

    Full Text Available The ′Other Primary Headaches′ include eight recognised benign headache disorders. Primary stabbing headache is a generally benign disorder which often co-exists with other primary headache disorders such as migraine and cluster headache. Primary cough headache is headache precipitated by valsalva; secondary cough has been reported particularly in association with posterior fossa pathology. Primary exertional headache can occur with sudden or gradual onset during, or immediately after, exercise. Similarly headache associated with sexual activity can occur with gradual evolution or sudden onset. Secondary headache is more likely with both exertional and sexual headache of sudden onset. Sudden onset headache, with maximum intensity reached within a minute, is termed thunderclap headache. A benign form of thunderclap headache exists. However, isolated primary and secondary thunderclap headache cannot be clinically differentiated. Therefore all headache of thunderclap onset should be investigated. The primary forms of the aforementioned paroxysmal headaches appear to be Indomethacin sensitive disorders. Hypnic headache is a rare disorder which is termed ′alarm clock headache′, exclusively waking patients from sleep. The disorder can be Indomethacin responsive, but can also respond to Lithium and caffeine. New daily persistent headache is a rare and often intractable headache which starts one day and persists daily thereafter for at least 3 months. The clinical syndrome more often has migrainous features or is otherwise has a chronic tension-type headache phenotype. Management is that of the clinical syndrome. Hemicrania continua straddles the disorders of migraine and the trigeminal autonomic cephalalgias and is not dealt with in this review.

  4. Preparation and Characterization of Novel Porous Fe-Si Alloys

    Institute of Scientific and Technical Information of China (English)

    WANG Jiefeng; HE Yuehui; JIANG Yao; GAO Hanyan; YANG Junsheng; GAO Lin

    2016-01-01

    Porous Fe-Si alloys with different nominal compositions ranging from Fe-10wt% Si to Fe-50wt% Si were fabricated through a reactive synthesis of Fe and Si elemental powder mixtures. The effects of Si contents on the pore structure of porous Fe-Si alloy were investigated in detail. The results showed that the open porosity, gas permeability and maximum pore size of the porous Fe-Si alloys increased with increasing Si contents, indicating that the porosity and pore size can be tailored by changing the Si contents. The pore structure parameter including the open porosity, gas permeability, maximum pore size obeyed the Hagen-Poiseuille formula with the constant G=0.035 m-1Pa-1s-1 for the reactively synthesized porous Fe-Si alloys. The mechanical property of the porous Fe-Si alloys showed applicability in the ifltration industries.

  5. The Aachen muon detector prototype. Muon measurement using scintillator tiles with SiPM readout

    Energy Technology Data Exchange (ETDEWEB)

    Meissner, Rebecca; Bretz, Thomas; Hebbeker, Thomas; Lauscher, Markus; Middendorf, Lukas; Niggemann, Tim; Peters, Christine; Schumacher, Johannes [III. Physikalisches Institut A, RWTH Aachen University (Germany); Collaboration: Pierre Auger-Collaboration

    2015-07-01

    Muons being produced in air showers of ultra high energy cosmic rays carry important information on their characteristics such as the mass of the primary particle and the first hadronic interactions at the highest energies. In the context of the Pierre Auger Observatory this upgrade would enable an enhanced primary particle identification as well as the verification of shower simulation models. For this purpose, a simple and robust detector design with scintillator tiles and SiPM readout is being developed, the Aachen Muon Detector (AMD). AMD could be situated below the SD tanks which would provide shielding from the electromagnetic part of the shower. In total, 64 scintillating tiles form the sensitive area of the detector. Wavelength-shifting fibres are inserted into the tiles in sigma-shape to collect the light and are coupled to optical fibres to guide it onto the photosensitive SiPMs. By reading out each SiPM individually, an excellent and low-background performance is expected. Currently the AMD prototype is being built in Aachen and in parallel SiPM and electronics characteristics are being evaluated.

  6. Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures

    Science.gov (United States)

    Jiang, Ran; Han, Zuyin; Sun, Weideng; Du, Xianghao; Wu, Zhengran; Jung, Hyung-Suk

    2015-10-01

    Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors when the samples under different gate polarities. At a negative voltage, a transmission modulation depth up to ˜74% was present without depending on the photo illumination power, whereas, at a positive voltage, the modulation of Thz wave shows dependence on the illumination power, which is ascribed to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 on Si-based semiconductor process, the ferroelectricity layer of Si:HfO2 may open up an avenue for the tunable modulation of Thz wave.

  7. Advanced Environmental Barrier Coatings Developed for SiC/SiC Composite Vanes

    Science.gov (United States)

    Lee, Kang N.; Fox, Dennis S.; Eldridge, Jeffrey I.; Zhu, Dongming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    Ceramic components exhibit superior high-temperature strength and durability over conventional component materials in use today, signifying the potential to revolutionize gas turbine engine component technology. Silicon-carbide fiber-reinforced silicon carbide ceramic matrix composites (SiC/SiC CMCs) are prime candidates for the ceramic hotsection components of next-generation gas turbine engines. A key barrier to the realization of SiC/SiC CMC hot-section components is the environmental degradation of SiC/SiC CMCs in combustion environments. This is in the form of surface recession due to the volatilization of silica scale by water vapor. An external environmental barrier coating (EBC) is a logical approach to achieve protection and long-term durability.

  8. Characterization of Si and C implantation induced defects in 4H-SiC

    Science.gov (United States)

    Kummari, Venkata; Dhoubhadel, Mangal; Rout, Bibhudutta; Reinert, Tilo; Spemann, Daniel; Jiang, Weilin; McDaniel, Floyd

    2011-10-01

    Silicon Carbide is considered to be a promising material for dilute magnetic semiconductors (DMSs). Past experimental studies reveal that ferromagnetism can be observed in SiC diluted with 3d transition metals. Recent studies, based on first principle calculations, show that for SiC monolayers, the presence of silicon vacancies (VSi) may induce local magnetization. However, no spin polarization occurs for carbon vacancies (VC), Si+C divacancies, and Si-C antisite defects. Ion implantation is an excellent technique to create vacancies for defect induced magnetism. We have implanted Si and C into 4H-SiC at low energy 60 keV to study the implantation defects for different fluences which corresponds to different percentages of simulated damages (e.g. 10 -- 60 %) obtained using Monte-Carlo simulations code SRIM/TRIM-2008. Defect disorder after ion implantation has been investigated using Rutherford Backscattering Spectrometry/Channeling (RBS/C) and Raman spectroscopy.

  9. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  10. SiC/Si{sub 3}N{sub 4} nanotubes from peanut shells

    Energy Technology Data Exchange (ETDEWEB)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, C.R. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington D.C., 20375 (United States)

    2016-06-15

    Nanotubes and nanoparticles of SiC and Si{sub 3}N{sub 4} were produced from the thermal treatment of peanut shells in argon and nitrogen atmospheres respectively, at temperatures in excess of 1350°C. Using x-ray diffraction, Raman spectroscopy and transmission electron microscopy analysis, the processed samples in argon atmosphere were shown to consist of 2H and 3C polytypes of SiC nanoparticles and nanotubes. Whereas the samples prepared in nitrogen atmosphere consisted of α-phase of Si{sub 3}N{sub 4}. Nanostructures formed by a single direct reaction provide a sustainable synthesis route for nanostructured SiC and Si{sub 3}N{sub 4}, for potential engineering applications due to their exceptional mechanical and electro-optic properties.

  11. Light absorption mechanism in single c-Si (core)/a-Si (shell) coaxial nanowires.

    Science.gov (United States)

    Liu, W F; Oh, J I; Shen, W Z

    2011-03-25

    We have carried out detailed investigations on the light absorption mechanism in single crystalline silicon (c-Si) (core)/amorphous Si (a-Si) (shell) coaxial nanowires (NWs). Based on the Lorenz-Mie light scattering theory, we have found that the light absorption in the coaxial NWs relies on the leaky mode resonances and that the light absorption can be optimized towards photovoltaic applications when the a-Si shell thickness is about twice the c-Si core radius. The photocurrent has been found to be enhanced up to ∼ 560% compared to c-Si NWs, and to be further enhanced up to ∼ 60% by coating the nonabsorbing dielectric shells.

  12. Si3N4-SiC材料的腐蚀性能研究

    Institute of Scientific and Technical Information of China (English)

    李杰

    2009-01-01

    利用Si3N4-SiC材料在冰晶石静态融盐电解质中的腐蚀实验研究材料的腐蚀性能,对腐蚀增重率进行记录分析,Si3N4的含量以及腐蚀时间都是影响Si3N4-SiC材料腐蚀性能的重要因素,腐蚀过程主要发生在25h前,并且随着Si3N4的含量增加,腐蚀程度越严重.

  13. Effects of proton implantation on amorphous SiO sub 2 predamaged by Si implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Tetsuo; Iwayama-Shimizu, Tsutomu; Itoh, Noriaki (Nagoya Univ. (Japan). Dept. of Physics); Fukui, Minoru; Okada, Syunji

    1990-10-01

    The effects of H implantation on amorphous SiO{sub 2} preimplanted with Si have been studied through electron paramagnetic resonance (EPR). It is shown that both the width and intensity of the EPR spectra of the E'{sub 1} centres generated by Si implantation increase upon H implantation, in contrast to the results for Ar and succeeding H implantation. The difference is ascribed to the difference in the effective cross section of annihilation under proton implantation of the E'{sub 1} centres in Si-and Ar-implanted SiO{sub 2}. The result supports the previously proposed model in which the combination of Si and interstitial O reduces the annihilation of the E'{sub 1} centres. (author).

  14. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bing-Qing; LIU Feng-Zhen; ZHANG Qun-Fang; XU Ying; ZHOU Yu-Qin; LIU Jin-Long; ZHU Mei-Fang

    2006-01-01

    The p-type microcrystalline silicon (fj,c-Si) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the pc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μcSi:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08 W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15 nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.

  15. Determination of the SiO(2)/Si interface roughness by diffuse reflectance measurements.

    Science.gov (United States)

    Roos, A; Bergkvist, M; Ribbing, C G

    1988-11-15

    The problem of determining the roughness of the SiO(2)/Si interface is treated. A model is used based on the Fresnel formalism and scalar scattering theory. The resulting formulas express the diffuse reflectance as a function of the optical constants of the two materials, the oxide thickness and the rms roughness of the interfaces. Using the roughness values as adjustable parameters, quantitative information about the interface roughness is obtained from the diffuse reflectance spectra for an SiO(2)/Si double layer. Excellent agreement between calculated and experimental spectra is obtained for an rms roughness of 9.0 nm at the front surface and 2.2 nm at the oxide substrate interface for the case of a low-pressure low-temperature CVD film of SiO(2) on Si.

  16. Si-based Nanoparticles: a biocompatibility study

    Science.gov (United States)

    Rivolta, I.; Lettiero, B.; Panariti, A.; D'Amato, R.; Maurice, V.; Falconieri, M.; Herlein, N.; Borsella, E.; Miserocchi, G.

    2010-10-01

    Exposure to silicon nanoparticles (Si-NPs) may occur in professional working conditions or for people undergoing a diagnostic screening test. Despite the fact that silicon is known as a non-toxic material, in the first case the risk is mostly related to the inhalation of nanoparticles, thus the most likely route of entry is across the lung alveolar epithelium. In the case of diagnostic imaging, nanoparticles are usually injected intravenously and Si-NPs could impact on the endothelial wall. In our study we investigated the interaction between selected Si-based NPs and an epithelial lung cell line. Our data showed that, despite the overall silicon biocompatibility, however accurate studies of the potential toxicity induced by the nanostructure and engineered surface characteristics need to be accurately investigated before Si nanoparticles can be safely used for in vivo applications as bio-imaging, cell staining and drug delivery.

  17. Half-life of 31Si

    CERN Document Server

    D'Agostino, Giancarlo; Mana, Giovanni; Oddone, Massimo

    2016-01-01

    Half-life values are widely used in nuclear chemistry to model the exponential decay of the quantified radionuclides. The analysis of existing data reveals a general lack of information on the performed experiments and an almost complete absence of uncertainty budgets. This is the situation for 31Si, the radionuclide produced via neutron capture reaction recently used to quantify trace amounts of 30Si in a sample of the silicon material highly enriched in 28Si and used for the determination of the Avogadro constant. In order to improve the quality of the now recommended 157.36(26) min value, we carried out repeated observations of the 31Si decay rate via gamma-ray spectrometry measurements. This paper reports the result we obtained, including details of the experiment and the evaluation of the uncertainty.

  18. Refractive index spectral dependence, Raman and transmission spectra of high-purity $^{28}$Si, $^{29}$Si, $^{30}$Si, and $^{nat}$Si single crystals

    CERN Document Server

    Plotnichenko, V G; Kryukova, E B; Koltashev, V V; Sokolov, V O; Dianov, E M; Gusev, A V; Gavva, V A; Kotereva, T V; Churbanov, M F

    2011-01-01

    Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \\times 10^{-5} ... 1 \\times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \\times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied.

  19. Cu2ZnSiS4

    Directory of Open Access Journals (Sweden)

    Kimberly A. Rosmus

    2011-04-01

    Full Text Available Single crystals of Cu2ZnSiS4, dicopper(I zinc silicon tetrasulfide, have been prepared via high-temperature solid-state synthesis. Cu2ZnSiS4 was found to have the wurtz-stannite structure type, like that of Li2CdGeS4, Li2CdSnS4, and Cu2CdSiS4. Each sulfur anion is tetrahedrally coordinated by two Cu cations, one Si cation, and one Zn cation, forming a three-dimensional honeycomb structure. When viewed along the c axis, the atoms are aligned in rows in which each cation alternates with the sulfur anions.

  20. Straight SiO_x nanorod Yjunctions

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Novel straight silicon oxide [SiOx (1Si plate by thermal evaporation of mixed powders of silica and carbon nanofibers at 1300℃ and condensation on a Si substrate without assistance of any catalyst. The synthesized samples were characterized by means of scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy. The results suggested that the straight nanorod Y junctions are amorphous and consist only of elements Si and O, and these rods with diameters about 50―200 nm have a neat smooth surface. The growth of such silicon oxide nanorods may be a result of the second nucleation on the surface of rods causing a change in the growth direc- tion of silicon oxide nanorods developed.

  1. Chemisorption of Au on Si(001) surface

    Institute of Scientific and Technical Information of China (English)

    Wei Shu-Yi; Wang Jian-Guang; Ma Li

    2004-01-01

    @@ The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001)surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B1 site(bridge site), resulting in a Au-Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.

  2. La3Si6N11

    Directory of Open Access Journals (Sweden)

    Hisanori Yamane

    2014-06-01

    Full Text Available Colorless transparent single crystals of trilanthanum hexasilicon undecanitrogen, La3Si6N11, were prepared at 0.85 MPa of N2 and 2273 K. The title compound is isotypic with Sm3Si6N11. Silicon-centered nitrogen tetrahedra form a three-dimensional network structure by sharing their corners. Layers of one type of SiN4 tetrahedra and slabs composed of the two different La3+ cations and the other type of SiN4 tetrahedra are alternately stacked along the c axis of the tetragonal unit cell. The site symmetries of the two La3+ cations are are ..m and 4.., respectively.

  3. The solidification and structure of Al-17wt.%Si alloy modified with intermetallic phases containing Ti and Fe

    Directory of Open Access Journals (Sweden)

    J. Piątkowski

    2011-10-01

    Full Text Available The article describes the process of casting and solidification of Al-17wt.%Si alloy that have been modified with composite powdercontaining the intermetallic phases of Ti and Fe. The chemical and phase composition of the applied modifier was described with thefollowingformula:FeAlx–TiAlx–Al2O3. Applying the method of thermal analysis ATD, the characteristic parameters of the solidificationprocess were determined, and exo-and endothermic effects of the modifying powder on the run of the silumin solidification curves wereobserved. By the methods of light, scanning, and X-ray microscopy, the structure of alloy and the chemical composition of the dispersionhardening precipitates were examined. A change in the morphology of Al-Si eutectic from the lamellar to fibrous type was reportedtogether with changes in the form of complex eutectics of an Al-Si-Ti and Al-Si-Fe type and size reduction of primary silicon crystals.

  4. Assessment of AlSi21CuNi Alloy’s Quality with Use of ATND Method

    Directory of Open Access Journals (Sweden)

    Pezda J.

    2013-12-01

    Full Text Available Majority of combustion engines is produced (poured from Al-Si alloys with low thermal expansion coefficient, so called piston silumins. Hypereutectic alloys normally contain coarse, primary angular Si particles together with eutectic Si phase. The structure and mechanical properties of these alloys are highly dependent upon cooling rate, composition, modification and heat-treatment operations. In the paper one depicts use of the ATND method (thermal-voltage-derivative analysis and regression analysis to assessment of quality of the AlSi21CuNi alloy modified with Cu-P on stage of its preparation, in aspect of obtained mechanical properties (R0,02, Rm, A5, HB. Obtained dependencies enable prediction of mechanical properties of the investigated alloy in laboratory conditions, using values of characteristic points from curves of the ATND method.

  5. Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

    Directory of Open Access Journals (Sweden)

    Boyen Hans-Gerd

    2011-01-01

    Full Text Available Abstract Hydrogenated multilayers (MLs of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.

  6. Disilicon complexes with two hexacoordinate Si atoms: paddlewheel-shaped isomers with (ClN4 )Si-Si(S4 Cl) and (ClN2 S2 )Si-Si(S2 N2 Cl) skeletons.

    Science.gov (United States)

    Wagler, Jörg; Brendler, Erica; Heine, Thomas; Zhechkov, Lyuben

    2013-10-11

    The reaction of 1-methyl-3-trimethylsilylimidazoline-2-thione with hexachlorodisilane proceeds toward substitution of four of the disilane Cl atoms during the formation of disilicon complexes with two neighboring hexacoordinate Si atoms. The N,S-bidentate methimazolide moieties adopt a buttressing role, thus forming paddlewheel-shaped complexes of the type ClSi(μ-mt)4 SiCl (mt=methimazolyl). Most interestingly, three isomers (i.e., with (ClN4 )SiSi(S4 Cl), (ClN3 S)SiSi(S3 NCl), and (ClN2 S2 )SiSi(S2 N2 Cl) skeletons as so-called (4,0), (3,1), and cis-(2,2) paddlewheels) were detected in solution by using (29) Si NMR spectroscopic analysis. Two of these isomers could be isolated as crystalline solids, thus allowing their molecular structures to be analyzed by using X-ray diffraction studies. In accord with time-dependent NMR spectroscopy, computational analyses proved the cis-(2,2) isomer with a (ClN2 S2 )SiSi(S2 N2 Cl) skeleton to be the most stable. The compounds presented herein are the first examples of crystallographically evidenced disilicon complexes with two SiSi-bonded octahedrally coordinated Si atoms and representatives of the still scarcely explored class of Si coordination compounds with sulfur donor atoms.

  7. Microstructures and tensile properties of hot-extruded Al matrix composites containing different amounts of Mg{sub 2}Si

    Energy Technology Data Exchange (ETDEWEB)

    Emamy, M., E-mail: emamy@ut.ac.ir [School of Metallurgy and Materials, College of Engineering, University of Tehran, P.O. Box 14395-731, Tehran (Iran, Islamic Republic of); Vaziri Yeganeh, S.E.; Razaghian, A. [Imam Khomeini International University, Qazvin (Iran, Islamic Republic of); Tavighi, K. [School of Metallurgy and Materials, College of Engineering, University of Tehran, P.O. Box 14395-731, Tehran (Iran, Islamic Republic of)

    2013-12-01

    The effect of hot extrusion process on the microstructure and tensile properties of aluminum matrix composite containing 15, 20, 25 and 30 wt% Mg{sub 2}Si phase has been studied in this investigation. Microstructural examinations were assessed by the use of optical microscope and scanning electron microscopy. The results revealed that hot extrusion breaks primary Mg{sub 2}Si phase and changes its morphology from dendritic to regular shape. It was also found that hot extrusion reduces the size of primary particles as well as casting defects such as porosity. Further examination showed that hot extrusion has strong effect on breaking eutectic Mg{sub 2}Si network. Remarkable result of this study was concerned with significant improvement in ductility by hot extrusion. Fractographic examinations revealed that hot extrusion encourages ductile mode of fracture by introducing homogenous and fine dimples on the fracture surface of the aluminum matrix composites.

  8. Hot-wire synthesis of Si nanoparticles

    CSIR Research Space (South Africa)

    Scriba, MR

    2008-01-01

    Full Text Available , laser ablation or etching, and bottom-up synthesis such as colloidal chemistry and gas phase pyrolysis. The chemical processes in the latter are generally equivalent to those in the chemical vapour deposition of compact films. In the case of silicon... the deposition unit for thin films [3], leads us to believe that thermal catalytic pyrolysis, based on established HWCVD techniques, is a viable process for Si nanoparticle (powder) synthesis. The objective of this research is to produce Si nanoparticles...

  9. Use of SWOT on SI Training

    Institute of Scientific and Technical Information of China (English)

    杨文寅

    2012-01-01

      SI, simultaneous interpretation, is always considered mysterious and machine-like. In daily practice, we are still puz⁃zled or even depressed when being told that the only path to success is the repetition of tedious practice. Definitely, practice makes perfect but enacting of scientific method enables a winged tiger. SWOT analysis, which stands for Strengths, Weaknesses, Opportunities, and Threats, provides us with an effective training theory. This article would focus on materializing SWOT into our SI practice.

  10. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  11. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.;

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  12. Multifunctional triblock Nanocarrier (PAMAM-PEG-PLL) for the efficient intracellular siRNA delivery and gene silencing.

    Science.gov (United States)

    Patil, Mahesh L; Zhang, Min; Minko, Tamara

    2011-03-22

    A novel triblock poly(amido amine)-poly(ethylene glycol)-poly-l-lysine (PAMAM-PEG-PLL) nanocarrier was designed, synthesized, and evaluated for the delivery of siRNA. The design of the nanocarrier is unique and provides a solution to most of the common problems associated with the delivery and therapeutic applications of siRNA. Every component in the triblock nanocarrier plays a significant role and performs multiple functions: (1) tertiary amine groups in the PAMAM dendrimer work as a proton sponge and play a vital role in the endosomal escape and cytoplasmic delivery of siRNA; (2) PEG, a linker connecting PLL and PAMAM dendrimers renders nuclease stability and protects siRNA in human plasma; (3) PLL provides primary amines to form polyplexes with siRNA through electrostatic interaction and also acts as penetration enhancer; and (4) conjugation to PEG and PAMAM reduced toxicity of PLL and the entire triblock nanocarrier PAMAM-PEG-PLL. The data obtained show that the polyplexes resulted from the conjugation of siRNA, and the proposed nanocarriers were effectively taken up by cancer cells and induced the knock down of the target BCL2 gene. In addition, triblock nanocarrier/siRNA polyplexes showed excellent stability in human plasma.

  13. Evolution of Fe Bearing Intermetallics During DC Casting and Homogenization of an Al-Mg-Si Al Alloy

    Science.gov (United States)

    Kumar, S.; Grant, P. S.; O'Reilly, K. A. Q.

    2016-06-01

    The evolution of iron (Fe) bearing intermetallics (Fe-IMCs) during direct chill casting and homogenization of a grain-refined 6063 aluminum-magnesium-silicon (Al-Mg-Si) alloy has been studied. The as-cast and homogenized microstructure contained Fe-IMCs at the grain boundaries and within Al grains. The primary α-Al grain size, α-Al dendritic arm spacing, IMC particle size, and IMC three-dimensional (3D) inter-connectivity increased from the edge to the center of the as-cast billet; both α c-AlFeSi and β-AlFeSi Fe-IMCs were identified, and overall α c-AlFeSi was predominant. For the first time in industrial billets, the different Fe-rich IMCs have been characterized into types based on their 3D chemistry and morphology. Additionally, the role of β-AlFeSi in nucleating Mg2Si particles has been identified. After homogenization, α c-AlFeSi predominated across the entire billet cross section, with marked changes in the 3D morphology and strong reductions in inter-connectivity, both supporting a recovery in alloy ductility.

  14. Manufacturing and characterization of porous SiC for flow channel inserts in dual-coolant blanket designs

    Energy Technology Data Exchange (ETDEWEB)

    Bereciartu, Ainhoa [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Ordas, Nerea, E-mail: nordas@ceit.es [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Garcia-Rosales, Carmen [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Morono, Alejandro; Malo, Marta; Hodgson, Eric R. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Abella, Jordi [Institut Quimic de Sarria, University Ramon Llull, Via Augusta 390, 08017 Barcelona (Spain); Sedano, Luis [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain)

    2011-10-15

    SiC is the primary candidate for the flow channel inserts in dual-coolant blanket concepts. Porous SiC ceramics are attractive candidates for this non-structural application, since they can satisfy the required properties through a low cost manufacturing route, compared to SiC{sub f}/SiC. This work shows first results of the manufacturing of porous SiC ceramics prepared with different amounts of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} as sintering additives. C powders were used as pore-formers by their burnout during oxidation after sintering. Comparison of microstructure, porosity, flexural strength, thermal and electrical conductivity and corrosion under Pb-15.7Li of porous SiC without and with sintering additives is presented. The addition of 2.5 wt.% of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} improves the mechanical properties, and reduces the thermal and electrical conductivity down to reasonable values. Preliminary corrosion tests under Pb-15.7 Li at 500 deg. C show that the absence of a dense coating on porous SiC leads to poor corrosion behavior.

  15. Effect of ultrasonic treatment on formation of iron-containing intermetallic compounds in Al-Si alloys

    Directory of Open Access Journals (Sweden)

    Yu-bo Zhang

    2016-09-01

    Full Text Available Iron is generally regarded as an unavoidable impurity in Al-Si casting alloys. The acicular Al3Fe and β-Al5FeSi (or Al9Si2Fe2 are common iron-containing intermetallic compounds (IMCs in conventional structure which have a detrimental impact on the mechanical properties. In this paper, ultrasonic field (USF was applied to modify acicular iron phases in Al-12%Si-2%Fe and Al-2%Fe alloys. The results show that the USF applied to Al-Fe alloys caused the morphological transformation of both primary and eutectic Al3Fe from acicular to blocky and granular without changes in their composition. In the case of Al-Si-Fe alloys, ultrasonic treatment led to both morphological and compositional conversion of the ternary iron IMCs. When the USF was applied, the acicular β-Al9Si2Fe2 was substituted by star-like α-Al12Si2Fe3. The modification rate of both binary and ternary iron IMCs relates to the USF treatment duration. The undercooling induced by the ultrasonic vibration contributes to the nucleation of intermetallics and can explain the transformation effect.

  16. Development and Characterization of SiC)/ MoSi2-Si3N4(p) Hybrid Composites

    Science.gov (United States)

    Hebsur, Mohan G.

    1998-01-01

    Intermetallic compound MoSi2 has long been known as a high temperature material that has excellent oxidation resistance and electrical/thermal conductivity. Also its low cost, high melting point (2023 C), relatively low density (6.2 g/cu cm versus 9 g/cu cm for current engine materials), and ease of machining, make it an attractive structural material. However, the use of MoSi2 has been hindered due to its poor toughness at low temperatures, poor creep resistance at high temperatures, and accelerated oxidation (also known as 'pest' oxidation) at temperatures between approximately 450 and 550 C. Continuous fiber reinforcing is very effective means of improving both toughness and strength. Unfortunately, MoSi2 has a relatively high coefficient of thermal expansion (CTE) compared to potential reinforcing fibers such as SiC. The large CTE mismatch between the fiber and the matrix resulted in severe matrix cracking during thermal cycling. Addition of about 30 to 50 vol % of Si3N4 particulate to MoSi2 improved resistance to low temperature accelerated oxidation by forming a Si2ON2 protective scale and thereby eliminating catastrophic 'pest failure'. The Si3N4 addition also improved the high temperature creep strength by nearly five orders of magnitude, doubled the room temperature toughness and significantly lowered the CTE of the MoSi2 and eliminated matrix cracking in SCS-6 reinforced composites even after thermal cycling. The SCS-6 fiber reinforcement improved the room temperature fracture toughness by seven times and impact resistance by five times. The composite exhibited excellent strength and toughness improvement up to 1400 C. More recently, tape casting was adopted as the preferred processing of MoSi2-base composites for improved fiber spacing, ability to use small diameter fibers, and for lower cost. Good strength and toughness values were also obtained with fine diameter Hi-Nicalon tow fibers. This hybrid composite remains competitive with ceramic matrix

  17. Thermo-Oxidative Degradation Of SiC/Si3N4 Composites

    Science.gov (United States)

    Baaklini, George Y.; Batt, Ramakrishna T.; Rokhlin, Stanislav I.

    1995-01-01

    Experimental study conducted on thermo-oxidative degradation of composite-material specimens made of silicon carbide fibers in matrices of reaction-bonded silicon nitride. In SiC/Si3N4 composites of study, interphase is 3-micrometers-thick carbon-rich coat on surface of each SiC fiber. Thermo-oxidative degradation of these composites involves diffusion of oxygen through pores of composites to interphases damaged by oxidation. Nondestructive tests reveal critical exposure times.

  18. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2017-08-23

    As novel materials for food contact packaging, inorganic silicon oxide (SiOx) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiOx films for food packaging it is vital to study the interaction between SiOx layers and food contaminants, as well as the function of a SiOx barrier layer in antioxidant migration resistance. In this study, we deposited a SiOx layer on polylactic acid (PLA)-based films to prepare SiOx/PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiOx/PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiOx layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiOx/PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiOx/PLA coated films increase. The SiOx barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiOx/PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  19. Analiza comparativa intre sinergia in comunicarea integrata de marketing si sinergia la nivelul fuziunii si achizitiilor

    OpenAIRE

    Ana Roxana Matei

    2010-01-01

    Acest articol ilustreaza o analiza comparativa intre sinergia in comunicarea integrata de marketing (CIM) si sinergia la nivelul fuziunilor. Pana in prezent s-a discutat despre acesti termeni ca fiind diferiti dar aceasta abordare isi propune sa demonstreze ca exista o legatura si chiar o suprapunere intre acestia. Sinergia la nivelul fuziunilor si achizitiilor a fost un concept care a precedat sinergia in CIM dar nu a beneficiat de atentia acordata celei din urma. Articolul isi propune sa id...

  20. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.