WorldWideScience

Sample records for bias voltage pulses

  1. Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.

    Science.gov (United States)

    Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

    2017-10-23

    The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.

  2. Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

    International Nuclear Information System (INIS)

    Olbrich, W.; Kampschulte, G.

    1993-01-01

    The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

  3. Hard coatings on magnesium alloys by sputter deposition using a pulsed d.c. bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Reiners, G. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Griepentrog, M. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany)

    1995-12-01

    An increasing use of magnesium-based light-metal alloys for various industrial applications was predicted in different technological studies. Companies in different branches have developed machine parts made of magnesium alloys (e.g. cars, car engines, sewing and knitting machines). Hence, this work was started to evaluate the ability of hard coatings obtained by physical vapour deposition (PVD) in combination with coatings obtained by electrochemical deposition to protect magnesium alloys against wear and corrosion. TiN hard coatings were deposited onto magnesium alloys by unbalanced magnetron sputter deposition. A bipolar pulsed d.c. bias voltage was used to limit substrate temperatures to 180 C during deposition without considerable loss of microhardness and adhesion. Adhesion, hardness and load-carrying capacity of TiN coatings deposited directly onto magnesium alloys are compared with the corresponding values of TiN coatings deposited onto substrates which had been coated electroless with an Ni-P alloy interlayer prior to the PVD. (orig.)

  4. Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

    International Nuclear Information System (INIS)

    Wang, Jia; Cao, Zhongyue; Pan, Fuping; Wang, Fuguo; Liang, Aimin; Zhang, Junyan

    2015-01-01

    Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH 4 , Ar, and H 2 atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

  5. Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jia; Cao, Zhongyue; Pan, Fuping [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Fuguo, E-mail: fgwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liang, Aimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Junyan, E-mail: zhangjunyan@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2015-11-30

    Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH{sub 4}, Ar, and H{sub 2} atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

  6. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    International Nuclear Information System (INIS)

    Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

    2016-01-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

  7. Mo-containing tetrahedral amorphous carbon deposited by dual filtered cathodic vacuum arc with selective pulsed bias voltage

    International Nuclear Information System (INIS)

    Pasaja, Nitisak; Sansongsiri, Sakon; Intarasiri, Saweat; Vilaithong, Thiraphat; Anders, Andre

    2007-01-01

    Metal-containing tetrahedral amorphous carbon films were produced by dual filtered cathodic vacuum arc plasma sources operated in sequentially pulsed mode. Negatively pulsed bias was applied to the substrate when carbon plasma was generated, whereas it was absent when the molybdenum plasma was presented. Film thickness was measured after deposition by profilometry. Glass slides with silver pads were used as substrates for the measurement of the sheet resistance. The microstructure and composition of the films were characterized by Raman spectroscopy and Rutherford backscattering, respectively. It was found that the electrical resistivity decreases with an increase of the Mo content, which can be ascribed to an increase of the sp 2 content and an increase of the sp 2 cluster size

  8. Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator

    Science.gov (United States)

    Yang, Z.; Li, X.; Li, J.; Long, J. D.; Lan, C. H.; Wang, T.; Dong, P.; He, J. L.

    2017-03-01

    A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

  9. Pulse-voltage fast generator

    International Nuclear Information System (INIS)

    Valeev, R.I.; Nikiforov, M.G.; Kharchenko, A.F.

    1988-01-01

    The design is described and the test results of a four-channel pulse-voltage generator with maximum output voltage 200 kV are presented. The measurement results of generator triggering time depending on the value and polarity of the triggering voltage pulse for different triggering circuits are presented. The tests have shown stable triggering of all four channels of the generator in the range up to 40 % from selfbreakdown voltage. The generator triggering delay in the given range is <25 ns, asynchronism in channel triggering is <±1 ns

  10. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  11. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  12. Improvement of stability of sinusoidally driven atmospheric pressure plasma jet using auxiliary bias voltage

    Directory of Open Access Journals (Sweden)

    Hyun-Jin Kim

    2015-12-01

    Full Text Available In this study, we have proposed the auxiliary bias pulse scheme to improve the stability of atmospheric pressure plasma jets driven by an AC sinusoidal waveform excitation source. The stability of discharges can be significantly improved by the compensation of irregular variation in memory voltage due to the effect of auxiliary bias pulse. From the parametric study, such as the width, voltage, and onset time of auxiliary bias pulse, it has been demonstrated that the auxiliary bias pulse plays a significant role in suppressing the irregular discharges caused by the irregular variation in memory voltage and stable discharge can be initiated with the termination of the auxiliary bias pulse. As a result of further investigating the effects of the auxiliary pulse scheme on the jet stability under various process conditions such as the distance between the jet head and the counter electrode, and carrier gas flow, the jet stability can be improved by adjusting the amplitude and number of the bias pulse depending on the variations in the process conditions.

  13. High-voltage pulse generator

    International Nuclear Information System (INIS)

    Roche, M.

    1991-01-01

    This generator is composed of elementary impulsion generators connected in series. Each of them have -storage capacities, and switchs. The closure of switch causes an accumulator discharge. -control means of these switches are electrically independent and forecast to switch on by pulses in the same time -loading means of storage means have a very low enough electric dependence not to induce a loss of power at the exit of the generator. Applications to particle accelerators [fr

  14. Voltage-pulse generator for electron gun

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    A voltage-pulse generator with combined capacitive and inductive storage devices of an electron gun is described. The current interrupter is a hydrogen thyratron (TGI1-100/8, TGI1-500/16, or TGI1-1000/25) installed in a short magnetic lens. The current interruption time of the thyratrons is 100-300 nsec. When the capacitive storage device is charged to 1 kV, a voltage pulse with an amplitude of 25 kV is obtained at the load

  15. High-voltage nanosecond pulse shaper

    International Nuclear Information System (INIS)

    Kapishnikov, N.K.; Muratov, V.M.; Shatanov, A.A.

    1987-01-01

    A high-voltage pulse shaper with an output of up to 250 kV, a base duration of ∼ 10 nsec, and a repetition frequency of 50 pulses/sec is described. The described high-voltage nanosecond pulse shaper is designed for one-orbit extraction of an electron beam from a betatron. A diagram of the pulse shaper, which employs a single-stage generator is shown. The shaping element is a low-inductance capacitor bank of series-parallel KVI-3 (2200 pF at 10 kV) or K15-10 (4700 pF at 31.5 kV) disk ceramic capacitors. Four capacitors are connected in parallel and up to 25 are connected in series

  16. High voltage pulse generator. [Patent application

    Science.gov (United States)

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  17. A high-voltage pulse generator for corona plasma generation

    NARCIS (Netherlands)

    Yan, K.; Heesch, van E.J.M.; Pemen, A.J.M.; Huijbrechts, P.A.H.J.; Gompel, van F.M.; Leuken, van H.E.M.; Matyas, Z.

    2002-01-01

    This paper discusses a high-voltage pulse generator for producing corona plasma. The generator consists of three resonant charging circuits, a transmission line transformer, and a triggered spark-gap switch. Voltage pulses in the order of 30-100 kV with a rise time of 10-20 ns, a pulse duration of

  18. Gyromagnetic nonlinear transmission line generator of high voltage pulses modulated at 4 GHz frequency with 1000 Hz pulse repetition rate

    International Nuclear Information System (INIS)

    Ulmasculov, M R; Sharypov, K A; Shunailov, S A; Shpak, V G; Yalandin, M I; Pedos, M S; Rukin, S N

    2017-01-01

    Results of testing of a generator based on a solid-state drive and the parallel gyromagnetic nonlinear transmission lines with external bias are presented. Stable rf-modulated high-voltage nanosecond pulses were shaped in each of the four channels in 1 s packets with 1000 Hz repetition frequencies. Pulse amplitude reaches -175 kV, at a modulation depth of rf-oscillations to 50 % and the effective frequency ∼4 GHz. (paper)

  19. A 350 KV nanosecond pulse voltage generator with adjustable pulsed-width

    International Nuclear Information System (INIS)

    Wang, X.; Wang, M.; Chen, Y.Q.; Zeng, L.G.; Han, M.

    2002-01-01

    This paper presents a 350 kV nanosecond pulse voltage generator (NPVG). The voltage pulsed-width can be adjusted from 30 to 160 ns. The generator consists of: Marx generator, pulsed forming line (PFL), main switch and matched impedance. The output voltage of Marx generator is over than nU c (n- the stage number of Marx generator, U c -the charging voltage of capacitor). When the pulse forming line is terminated with an impedance that is over than the characteristic impedance of PFL, the higher voltage pulse was provided for the load

  20. High-voltage pulse generator for electron gun power supply

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

  1. Effect of bias voltage on microstructure and mechanical properties of ...

    Indian Academy of Sciences (India)

    In the present study, authors report on the effect that substrate bias voltage has on the ... ings and at high deposition rates, having a wide range of .... The coatings were then ultra- ... The results of a typical compositional analysis carried out.

  2. Physicochemical assessment criteria for high-voltage pulse capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh. [National Research University, Moscow Power Engineering Institute (Russian Federation)

    2016-12-15

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  3. Physicochemical assessment criteria for high-voltage pulse capacitors

    International Nuclear Information System (INIS)

    Darian, L. A.; Lam, L. Kh.

    2016-01-01

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  4. Device and methods for writing and erasing analog information in small memory units via voltage pulses

    Science.gov (United States)

    El Gabaly Marquez, Farid; Talin, Albert Alec

    2018-04-17

    Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

  5. Pulsed high voltage discharge induce hematologic changes

    African Journals Online (AJOL)

    STORAGESEVER

    2009-10-19

    Oct 19, 2009 ... Sterilization appears to be the best way to ensure a very high level of safety in transfusion of blood and its ... those of individual proteins. ... MATERIALS AND METHODS ... Schematic diagram of the apparatus for generation of the Pulsed ... different number of pulses (function of exposure time) of high E-.

  6. A voltage biased superconducting quantum interference device bootstrap circuit

    International Nuclear Information System (INIS)

    Xie Xiaoming; Wang Huiwu; Wang Yongliang; Dong Hui; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhaeusser, Andreas; Mueck, Michael

    2010-01-01

    We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ 0 Hz -1/2 and a magnetic field resolution of less than 3 fT Hz -1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

  7. High voltage pulsed cable design: a practical example

    Energy Technology Data Exchange (ETDEWEB)

    Kewish, R.W. Jr.; Boicourt, G.P.

    1979-01-01

    The design of optimum high voltage pulse cable is difficult because very little emperical data are available on performance in pulsed applications. This paper follows the design and testing of one high voltage pulse cable, 40/100 trigger cable. The design was based on an unproven theory and the impressive outcome lends support to the theory. The theory is outlined and it is shown that there exists an inductance which gives a cable of minimum size for a given maximum stress. Test results on cable manufactured according to the design are presented and compared with the test results on the cable that 40/100 replaces.

  8. High voltage pulsed cable design: a practical example

    International Nuclear Information System (INIS)

    Kewish, R.W. Jr.; Boicourt, G.P.

    1979-01-01

    The design of optimum high voltage pulse cable is difficult because very little emperical data are available on performance in pulsed applications. This paper follows the design and testing of one high voltage pulse cable, 40/100 trigger cable. The design was based on an unproven theory and the impressive outcome lends support to the theory. The theory is outlined and it is shown that there exists an inductance which gives a cable of minimum size for a given maximum stress. Test results on cable manufactured according to the design are presented and compared with the test results on the cable that 40/100 replaces

  9. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  10. Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage

    International Nuclear Information System (INIS)

    Shiota, Yoichi; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

    2016-01-01

    We studied the rectification function of microwaves in CoFeB/MgO-based magnetic tunnel junctions using voltage-induced ferromagnetic resonance (FMR). Our findings reveal that the shape of the structure of the spectrum depends on the rotation angle of the external magnetic field, providing clear evidence that FMR dynamics are excited by voltage-induced magnetic anisotropy changes. Further, enhancement of the rectified voltage was demonstrated under a DC bias voltage. In our experiments, the highest microwave detection sensitivity obtained was 350 mV/mW, at an RF frequency of 1.0 GHz and field angle of θ_H=80°, ϕ_H=0°. The experimental results correlated with those obtained via simulation, and the calculated results revealed the magnetization dynamics at the resonance state. - Highlights: • Examined voltage-induced ferromagnetic resonance (FMR) under various field angles. • FMR dynamics are excited by voltage-induced magnetic anisotropy changes. • Microwave detection sensitivity depends on input RF and elevation angle. • Microwave detection sensitivity=350 mV/mW at RF=1.0 GHz, θ_H=80°, ϕ_H=0°.

  11. Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

    Science.gov (United States)

    Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

    2017-12-01

    We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

  12. High-voltage pulsed generator for dynamic fragmentation of rocks.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  13. High-voltage pulsed generator for dynamic fragmentation of rocks

    Science.gov (United States)

    Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  14. Twenty-channel high-voltage pulse generators

    International Nuclear Information System (INIS)

    Anan'in, P.S.; Kashirin, A.P.

    1980-01-01

    A 20-channel high-voltage pulse generator operating with a mismatched load is described. The generator contains shaping lines 20 m long made of coaxial cable, a trigatron-type discharged, and isolating plates. The channel characteristic impedance is 50 Ohm. The maximum pulse amplitude is up to 15 kV on a high-resistance load and 7.5 kV on a matched one. The pulse duration is 100 ns at a pulse rise time of 12 ns, the delay introduced by the generator is 200 +-2.5 ns. Provision is made in the control circuit for compensation of the shaped pulse and separation of a pulse reflected from the load. The reflected pulse shape and amplitude characterize load parameters. Generator tests proved its high operational reliability (after 10 5 operations no significant changes in generator performances have been observed). The generator is intended for filmless data output from spark chambers

  15. PLZT light transmittance memory driven with an asymmetric voltage pulse

    International Nuclear Information System (INIS)

    Inoue, Kazuhiko; Morita, Takeshi

    2010-01-01

    PLZT is a ferroelectric electro-optic material, which has been operated with a constant voltage supply to keep a certain optical property. In this study, we propose an optical transmittance memory effect by controlling the domain conditions. The keypoint is to use an asymmetric voltage pulse. In the positive direction, a sufficiently-large voltage is applied to align the polarization directions. After this operation, a relatively small light transmittance is memorized even after removing the electric field. On the other hand, in the negative direction, the amplitude of the voltage is adjusted to the coercive electric field. In this condition, the domain structure is almost the same as the depolarization state. With this voltage supply, the maximum light transmittance can be kept after removing the electric field. Using these voltage operations, the PLZT can obtain two light transmittance states depending on the domain structure. This memory effect should be useful for innovative optical scanners or shutters in the future.

  16. High-voltage pulse generator synchronous with LINAC

    International Nuclear Information System (INIS)

    Muto, M.; Hiratsuka, Yoshio; Niimura, Nobuo

    1974-01-01

    High-voltage pulse generator (H.V. Flip-Flop) No.2, an improved type of No.1, is described, which is used in the structural analysis of transient phenomena in materials through the neutron TOF with a Linac. The method of producing positive and negative high-voltage pulses synchronous with the Linac is identical with that in No.1. However, No.2 has outstanding features as follows: (1) The rise time of output pulses is reduced to 0.3 msec, due to the improvement of switching circuit and the winding of a step-up transformer; (2) The widths of positive and negative pulses are variable up to maximum 8 and 16 frames, respectively (One frame = 10 msec); (3) The distribution of TOF signals from a BF 3 counter to a time analyzer is possible even in the negative voltage duration. The panel is provided with the switches for choosing pulse width and the frame for analysis, as well as the dials for setting positive/negative pulse voltage values and the respective indicating meters. (Mori, K)

  17. Treatment of emulsified oils by electrocoagulation: pulsed voltage applications.

    Science.gov (United States)

    Genc, Ayten; Bakirci, Busra

    2015-01-01

    The effect of pulsed voltage application on energy consumption during electrocoagulation was investigated. Three voltage profiles having the same arithmetic average with respect to time were applied to the electrodes. The specific energy consumption for these profiles were evaluated and analyzed together with oil removal efficiencies. The effects of applied voltages, electrode materials, electrode configurations, and pH on oil removal efficiency were determined. Electrocoagulation experiments were performed by using synthetic and real wastewater samples. The pulsed voltages saved energy during the electrocoagulation process. In continuous operation, energy saving was as high as 48%. Aluminum electrodes used for the treatment of emulsified oils resulted in higher oil removal efficiencies in comparison with stainless steel and iron electrodes. When the electrodes gap was less than 1 cm, higher oil removal efficiencies were obtained. The highest oil removal efficiencies were 95% and 35% for the batch and continuous operating modes, respectively.

  18. Measurements of the asymmetric dynamic sheath around a pulse biased sphere immersed in flowing metal plasma

    International Nuclear Information System (INIS)

    Wu Hongchen; Anders, Andre

    2008-01-01

    A long-probe technique was utilized to record the expansion and retreat of the dynamic sheath around a spherical substrate immersed in pulsed cathode arc metal plasma. Positively biased, long cylindrical probes were placed on the side and downstream of a negatively pulsed biased stainless steel sphere of 1 in. (25.4 mm) diameter. The amplitude and width of the negative high voltage pulses (HVPs) were 2 kV, 5 kV, 10 kV, and 2 μs, 4 μs, 10 μs, respectively. The variation of the probe (electron) current during the HVP is a direct measure for the sheath expansion and retreat. Maximum sheath sizes were determined for the different parameters of the HVP. The expected rarefaction zone behind the biased sphere (wake) due to the fast plasma flow was clearly established and quantified.

  19. Measurements of the asymmetric dynamic sheath around a pulse biased sphere immersed in flowing metal plasma

    Science.gov (United States)

    Wu, Hongchen; Anders, André

    2008-08-01

    A long-probe technique was utilized to record the expansion and retreat of the dynamic sheath around a spherical substrate immersed in pulsed cathode arc metal plasma. Positively biased, long cylindrical probes were placed on the side and downstream of a negatively pulsed biased stainless steel sphere of 1 in. (25.4 mm) diameter. The amplitude and width of the negative high voltage pulses (HVPs) were 2 kV, 5 kV, 10 kV, and 2 µs, 4 µs, 10 µs, respectively. The variation of the probe (electron) current during the HVP is a direct measure for the sheath expansion and retreat. Maximum sheath sizes were determined for the different parameters of the HVP. The expected rarefaction zone behind the biased sphere (wake) due to the fast plasma flow was clearly established and quantified.

  20. Influence of X and gamma radiation and bias conditions on dropout voltage of voltage regulators serial transistors

    International Nuclear Information System (INIS)

    Vukic, V.; Osmokrovic, P.; Stankovic, S.; Kovacevic, M.

    2005-01-01

    Research topic presented in this paper is degradation of characteristics of low-dropout voltage regulator's serial transistor during exposure of device to the ionizing radiation. Voltage regulators were exposed to X and γ radiation in two modes: without bias conditions, and with bias conditions and load. Tested circuits are representatives of the first and the second generation of low-dropout voltage regulators, with lateral and vertical PNP serial transistor: LM2940 and L4940. Experimental results of output voltage and serial dropout voltage change in function of total ionizing dose, during the medium-dose-rate exposure, were presented. (author) [sr

  1. Loss characteristics of FLTD magnetic cores under fast pulsed voltage

    International Nuclear Information System (INIS)

    Wang Zhiguo; Sun Fengju; Qiu Aici; Jiang Xiaofeng; Liang Tianxue; Yin Jiahui; Liu Peng; Wei Hao; Zhang Pengfei; Zhang Zhong

    2012-01-01

    The test platform has been developed to generate exciting pulsed voltages with the rise time less than 30 ns. The loss characteristics of cores of 25 μm 2605TCA Metglas and 50 μm DG6 electrical steel were then studied. A characteristic parameter, the gradient of the voltage pulse applied per unit core area, is proposed to describe the exciting condition applied on magnetic cores. The loss of the DG6 core is about 4 times that of the 2605TCA core. Most loss of the DG6 core, about 75%, is due to eddy current. For the 2605TCA core, the percentage is about 28%. (authors)

  2. High-voltage short-fall pulse generator

    International Nuclear Information System (INIS)

    Dolbilov, G.V.; Fateev, A.A.; Petrov, V.A.

    1986-01-01

    Powerful high-voltage pulses with short fall times and relatively low afterpulse amplitude are required for the deflection systems of accelerators. A generator is described that provides, into a 75-ohm load, a voltage pulse of up to 100 kV with a fall time of less than 1 nsec and a relative afterpulse amplitude of less than or equal to 15%. The generator employs a short-circuited ferrite-filled line in which shock waves are formed. A magnetic section is used to increase power. The switch is a TGI1-2500/50 thyratron. The main causes of afterpulses and methods for reducing their amplitude are examined

  3. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    International Nuclear Information System (INIS)

    VanHaaften, F.

    1992-01-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-μs pulse width driving a load of ∼100 Ω, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 Ω, up to a level of ∼650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of ∼100 Ω

  4. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    International Nuclear Information System (INIS)

    Laghari, J.R.

    1992-01-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 x 10 6 rad, electrical stress at 40 V rms /μm, and thermal stress at 90 degrees C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life

  5. High-power high-voltage pulse generator for supplying electrostatic precipitators of dust

    International Nuclear Information System (INIS)

    Radu, A.; Martin, D.

    1992-01-01

    The study and development of an experimental high voltage generator specialized in the supply of electrostatic precipitators are presented. The main parameters of the pulse generator are: U = -30 kV, I = 8.8 A, τ = 120μs, f r = 150 Hz. The pulse generator was tested on a laboratory electrostatic precipitator with nominal capacitance C = 25 nF, biased at -40 kV by means of a separate high voltage rectifier. The experimental results will be used for the creation of a more powerful pulse generator, a prototype for the supply of a real industrial electrostatic precipitator: U = -50 kV, I = 313 A, τ = 100μs, f r = 300 Hz, C = 100 nF. (Author)

  6. Graphene-gold supercapacitor as a voltage controlled saturable absorber for femtosecond pulse generation.

    Science.gov (United States)

    Baylam, Isinsu; Balci, Osman; Kakenov, Nurbek; Kocabas, Coskun; Sennaroglu, Alphan

    2016-03-01

    We report, for the first time to the best of our knowledge, use of a graphene-gold supercapacitor as a voltage controlled fast saturable absorber for femtosecond pulse generation. The unique design involving only one graphene electrode lowers the insertion loss of the device, in comparison with capacitor designs with two graphene electrodes. Furthermore, use of the high-dielectric electrolyte allows reversible, adjustable control of the absorption level up to the visible region with low bias voltages of only a few volts (0-2 V). The fast saturable absorber action of the graphene-gold supercapacitor was demonstrated inside a multipass-cavity Cr:forsterite laser to generate nearly transform-limited, sub-100 fs pulses at a pulse repetition rate of 4.51 MHz at 1.24 μm.

  7. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    Energy Technology Data Exchange (ETDEWEB)

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  8. Dose reduction in pulsed fluoroscopy by modifying the high-voltage pulse shape

    International Nuclear Information System (INIS)

    Sabau, M.N.; Phelps, G.

    1988-01-01

    This paper presents the dose reduction results in pulsed fluoroscopy by modifying the high-voltage pulse shape (HVPS). Since the HVPS in regular pulsed fluoroscopy has a long tail, the radiation pulse shape (RPS) is similar. Using specially designed circuitry in the high-voltage generator to produce a rectangular HVPS, and consequently a rectangular RPS, it was possible to obtain a reduction of up to 25% of patient exposure. This dose reduction obtained by cutting the long tail of RPS does not damage the image quality

  9. Utility Interfaced Pulse-Width Modulation of Solar Fed Voltage ...

    African Journals Online (AJOL)

    Utility Interfaced Pulse-Width Modulation of Solar Fed Voltage Source Inverter Using Fixed-Band Hysteresis Current Controller Method. ... with the conversion of solar energy into electrical energy; boosting the dc power; inversion of the dc to ac and then synchronization of the inverter output with the utility, and consequently, ...

  10. Influence of negative substrate bias voltage on the impurity concentrations in Zr films

    International Nuclear Information System (INIS)

    Lim, J.-W.; Bae, J.W.; Mimura, K.; Isshiki, M.

    2006-01-01

    Zr films were deposited on Si(1 0 0) substrates without a substrate bias voltage and with substrate bias voltages of -50 V and -100 V using a non-mass separated ion beam deposition system. Secondary ion mass spectrometry and glow discharge mass spectrometry were used to determine the impurity concentrations in a Zr target and Zr films. It was found that the total amount of impurities in the Zr film deposited at the substrate bias voltage of -50 V was much lower than that in the Zr film deposited without the substrate bias voltage. It means that applying a negative bias voltage to the substrate can suppress the increase in impurities of Zr films. Furthermore, it was confirmed that dominant impurity elements such as C, N and O have a considerable effect on the purity of Zr films and these impurities can be remarkably reduced by applying the negative substrate bias voltage

  11. High-Voltage, Multiphasic, Nanosecond Pulses to Modulate Cellular Responses.

    Science.gov (United States)

    Ryan, Hollie A; Hirakawa, Shinji; Yang, Enbo; Zhou, Chunrong; Xiao, Shu

    2018-04-01

    Nanosecond electric pulses are an effective power source in plasma medicine and biological stimulation, in which biophysical responses are governed by peak power and not energy. While uniphasic nanosecond pulse generators are widely available, the recent discovery that biological effects can be uniquely modulated by reversing the polarity of nanosecond duration pulses calls for the development of a multimodal pulse generator. This paper describes a method to generate nanosecond multiphasic pulses for biomedical use, and specifically demonstrates its ability to cancel or enhance cell swelling and blebbing. The generator consists of a series of the fundamental module, which includes a capacitor and a MOSFET switch. A positive or a negative phase pulse module can be produced based on how the switch is connected. Stacking the modules in series can increase the voltage up to 5 kV. Multiple stacks in parallel can create multiphase outputs. As each stack is independently controlled and charged, multiphasic pulses can be created to produce flexible and versatile pulse waveforms. The circuit topology can be used for high-frequency uniphasic or biphasic nanosecond burst pulse production, creating numerous opportunities for the generator in electroporation applications, tissue ablation, wound healing, and nonthermal plasma generation.

  12. Effects of bias voltage on the properties of ITO films prepared on polymer substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lim, Donggun; Yang, Keajoon; Song, Woochang; Yi, Junsin

    2005-01-01

    The ITO (indium tin oxide) thin films were deposited on acryl, glass, PET, and poly-carbonate substrates by DC reactive magnetron sputtering. The bias voltage was changed from -20 to -80 V. As the bias voltage increased, the deposition rate of ITO films decreased regardless of substrate types. The roughness of the films on PET increased with the bias voltage. The study demonstrated that the bias improved the electrical and optical properties of ITO films regardless of substrate types. The lowest electrical resistivity of 5.5x10 -4 no. OMEGAno. -cm and visible transmittance of about 80% were achieved by applying a negative bias of -60 V

  13. High-voltage variable-duration pulse generator

    International Nuclear Information System (INIS)

    Anisimova, T.E.; Akkuratov, E.V.; Gromovenko, V.M.; Nikonov, Yu.P.; Malinin, A.N.

    1988-01-01

    A high-voltage generator is described that allows pulse duration tau to be varied within wide limits and has high efficiency (at least 50% for tau = 0.5 tau/sub max/) and an amplitude of up to 5 kV, a repetition frequency of up to 200 Hz,and a variable duration of 0-30 μsec. The generator is used in the controller of an electron accelerator

  14. Output pressure and harmonic characteristics of a CMUT as function of bias and excitation voltage

    DEFF Research Database (Denmark)

    Lei, Anders; Diederichsen, Søren Elmin; Hansen, Sebastian Molbech

    2015-01-01

    of the transmitted signal. The generation of intrinsic harmonics by the CMUT can be minimized by decreasing the excitation signal. This, however, leads to lower fundamental pressure which limits the desired generation of harmonics in the medium. This work examines the output pressure and harmonic characteristics...... of a CMUT as function of bias and excitation voltage. The harmonic to fundamental ratio of the surface pressures declines for decreasing excitation voltage and increasing bias voltage. The ratio, however, becomes unchanged for bias levels close to the pull-in voltage. The harmonic limitations of the CMUT...

  15. A compact high-voltage pulse generator based on pulse transformer with closed magnetic core.

    Science.gov (United States)

    Zhang, Yu; Liu, Jinliang; Cheng, Xinbing; Bai, Guoqiang; Zhang, Hongbo; Feng, Jiahuai; Liang, Bo

    2010-03-01

    A compact high-voltage nanosecond pulse generator, based on a pulse transformer with a closed magnetic core, is presented in this paper. The pulse generator consists of a miniaturized pulse transformer, a curled parallel strip pulse forming line (PFL), a spark gap, and a matched load. The innovative design is characterized by the compact structure of the transformer and the curled strip PFL. A new structure of transformer windings was designed to keep good insulation and decrease distributed capacitance between turns of windings. A three-copper-strip structure was adopted to avoid asymmetric coupling of the curled strip PFL. When the 31 microF primary capacitor is charged to 2 kV, the pulse transformer can charge the PFL to 165 kV, and the 3.5 ohm matched load can deliver a high-voltage pulse with a duration of 9 ns, amplitude of 84 kV, and rise time of 5.1 ns. When the load is changed to 50 ohms, the output peak voltage of the generator can be 165 kV, the full width at half maximum is 68 ns, and the rise time is 6.5 ns.

  16. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... a broad tunnelling current-overpotential range at a constant (large) bias voltage of +0.2 V. The current is found to be constant over a 0.25 V overpotential range, which covers roughly the range where the oxidised and reduced redox levels are located within the energy tip. STM contrast and apparent...... of previous theoretical work on in situ STM of redox molecules, to large bias voltages, \\eV(bias)\\ > E-r. Large bias voltages give tunnelling contrasts independent of the overpotential over a broad range, as both the oxidised and reduced redox levels are located within the 'energy tip' between the substrate...

  17. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  18. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  19. Development of ultra-short high voltage pulse technology using magnetic pulse compression

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Byung Heon; Kim, S. G.; Nam, S. M.; Lee, B. C.; Lee, S. M.; Jeong, Y. U.; Cho, S. O.; Jin, J. T.; Choi, H. L

    1998-01-01

    The control circuit for high voltage switches, the saturable inductor for magnetic assist, and the magnetic pulse compression circuit were designed, constructed, and tested. The core materials of saturable inductors in magnetic pulse compression circuit were amorphous metal and ferrite and total compression stages were 3. By the test, in high repetition rate, high pulse compression were certified. As a result of this test, it became possible to increase life-time of thyratrons and to replace thyratrons by solid-state semiconductor switches. (author). 16 refs., 16 tabs.

  20. Development of ultra-short high voltage pulse technology using magnetic pulse compression

    International Nuclear Information System (INIS)

    Cha, Byung Heon; Kim, S. G.; Nam, S. M.; Lee, B. C.; Lee, S. M.; Jeong, Y. U.; Cho, S. O.; Jin, J. T.; Choi, H. L.

    1998-01-01

    The control circuit for high voltage switches, the saturable inductor for magnetic assist, and the magnetic pulse compression circuit were designed, constructed, and tested. The core materials of saturable inductors in magnetic pulse compression circuit were amorphous metal and ferrite and total compression stages were 3. By the test, in high repetition rate, high pulse compression were certified. As a result of this test, it became possible to increase life-time of thyratrons and to replace thyratrons by solid-state semiconductor switches. (author). 16 refs., 16 tabs

  1. Influence of pulsed substrate bias on the structure and properties of Ti-Al-N films deposited by cathodic vacuum arc

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, G.P., E-mail: princeterry@163.com [Institute of Physics, Chinese Academy of Science, Beijing 100080 (China); Gao, G.J. [Changchun University of Science and Technology, College of Science, Changchun 130000 (China); Wang, X.Q.; Lv, G.H.; Zhou, L.; Chen, H.; Pang, H.; Yang, S.Z. [Institute of Physics, Chinese Academy of Science, Beijing 100080 (China)

    2012-07-15

    Ti-Al-N films were deposited by cathodic vacuum arc (CVA) technique in N{sub 2} atmosphere with different pulsed substrate bias. The influence of pulsed substrate bias (0 to -800 V) on the deposition rate, surface morphology, crystal structure, and mechanical properties of the Ti-Al-N films were systematically investigated. Increasing pulsed bias voltage resulted in the decrease of deposition rate but the increase of surface roughness. It was found that there was a strong correlation between the pulsed bias and film structure. All the films studied in this paper were composed of TiN, AlN, and Ti-Al-N ternary phases. The grains changed from equiaxial to columnar and exhibited preferred orientation when the pulsed bias increased. With the increase of pulsed bias voltage, the atomic ratio of Ti to Al element increased gradually, while the N to (Ti + Al) ratio decreased. The composite films present an enhanced nanohardness compared with binary TiN and ZrN films. The film deposited with pulsed bias of -200 V possessed the maximum scratch critical load and nanohardness. The minimum friction coefficient with pulsed bias of -300 V was obtained.

  2. Featuring of transient tunneling current by voltage pulse and application to an electrochemical biosensor

    Science.gov (United States)

    Yun, Jun Yeon; Lee, Won Cheol; Choi, Seong Wook; Park, Young June

    2018-03-01

    We suggest a voltage pulse method for detecting the transient tunneling current component (faradaic current component) in a metal/redox-active monolayer/electrolyte system. After applying the pulse to the metal electrode, the capacitive current prevails; therefore, it is difficult to extract the tunneling current, which carries information on the biochemical reactions occurring between the biomarkers in the electrolyte and the self-assembled monolayer (SAM) as the probe peptide system. Instead of waiting until the capacitive current diminishes, and thereby, the tunneling current also decreases, we try to extract the tunneling current in an early stage of the pulse. The method is based on the observation that the capacitive current becomes symmetrized in the positive and negative pulses after introducing the SAM on the metal electrode. When the energy level of the redox molecule is higher than the Fermi level of the metal under zero-bias condition, the tunneling current in the negative pulse can be extracted by subtracting the capacitive current obtained from the positive pulse, where the tunneling current is neglected. The experiment conducted for detecting trypsin as a biomarker shows that the method enhances the sensitivity and the specific-to-nonspecific ratio of the sensor device in the case of the nonspecific protein-abundant electrolyte solution, as evinced by cyclic voltammetry measurements in comparison.

  3. Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Hansen, Jørn Bindslev

    1999-01-01

    bias voltage the fabricated interferometers typically exhibit 3% sinusoidal modulation of the conductance as a function of a magnetic field applied perpendicular to the loop. The conductance modulation is caused by resonant Andreev states in the normal GaAs region of the device. With increasing bias...... voltage of the order of a few microvolts the device is driven out of resonance and the conductance oscillations are extinguished. However, at higher bias voltage corresponding to the superconducting energy gap of Al (178 mu V) the conductance oscillations reappear but with reduced amplitude...

  4. Ion energy distributions in bipolar pulsed-dc discharges of methane measured at the biased cathode

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, C; Rubio-Roy, M; Bertran, E; Portal, S; Pascual, E; Polo, M C; Andujar, J L, E-mail: corbella@ub.edu [FEMAN Group, IN2UB, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, c/ MartI i Franques 1, 08028 Barcelona (Spain)

    2011-02-15

    The ion fluxes and ion energy distributions (IED) corresponding to discharges in methane (CH{sub 4}) were measured in time-averaged mode with a compact retarding field energy analyser (RFEA). The RFEA was placed on a biased electrode at room temperature, which was powered by either radiofrequency (13.56 MHz) or asymmetric bipolar pulsed-dc (250 kHz) signals. The shape of the resulting IED showed the relevant populations of ions bombarding the cathode at discharge parameters typical in the material processing technology: working pressures ranging from 1 to 10 Pa and cathode bias voltages between 100 and 200 V. High-energy peaks in the IED were detected at low pressures, whereas low-energy populations became progressively dominant at higher pressures. This effect is attributed to the transition from collisionless to collisional regimes of the cathode sheath as the pressure increases. On the other hand, pulsed-dc plasmas showed broader IED than RF discharges. This fact is connected to the different working frequencies and the intense peak voltages (up to 450 V) driven by the pulsed power supply. This work improves our understanding in plasma processes at the cathode level, which are of crucial importance for the growth and processing of materials requiring controlled ion bombardment. Examples of industrial applications with these requirements are plasma cleaning, ion etching processes during fabrication of microelectronic devices and plasma-enhanced chemical vapour deposition of hard coatings (diamond-like carbon, carbides and nitrides).

  5. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    International Nuclear Information System (INIS)

    Lotfi, E; Rezania, H; Arghavaninia, B; Yarmohammadi, M

    2016-01-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength. (paper)

  6. A nanosecond high voltage pulse device for accelerator time analytical system

    International Nuclear Information System (INIS)

    Lou Binqiao; Ding Furong; Xue Zhihua; Wang Xuemei; Shen Dingyu

    2002-01-01

    A nanosecond high voltage pulse device has been designed. The pulse rise time is 10 ns. The pulse voltage reached 16000 V. This device has been used to accelerator time analytical system, its resolution time is less than 0.8%

  7. Circuit-field coupled finite element analysis method for an electromagnetic acoustic transducer under pulsed voltage excitation

    International Nuclear Information System (INIS)

    Hao Kuan-Sheng; Huang Song-Ling; Zhao Wei; Wang Shen

    2011-01-01

    This paper presents an analytical method for electromagnetic acoustic transducers (EMATs) under voltage excitation and considers the non-uniform distribution of the biased magnetic field. A complete model of EMATs including the non-uniform biased magnetic field, a pulsed eddy current field and the acoustic field is built up. The pulsed voltage excitation is transformed to the frequency domain by fast Fourier transformation (FFT). In terms of the time harmonic field equations of the EMAT system, the impedances of the coils under different frequencies are calculated according to the circuit-field coupling method and Poynting's theorem. Then the currents under different frequencies are calculated according to Ohm's law and the pulsed current excitation is obtained by inverse fast Fourier transformation (IFFT). Lastly, the sequentially coupled finite element method (FEM) is used to calculate the Lorentz force in the EMATs under the current excitation. An actual EMAT with a two-layer two-bundle printed circuit board (PCB) coil, a rectangular permanent magnet and an aluminium specimen is analysed. The coil impedances and the pulsed current are calculated and compared with the experimental results. Their agreement verified the validity of the proposed method. Furthermore, the influences of lift-off distances and the non-uniform static magnetic field on the Lorentz force under pulsed voltage excitation are studied. (interdisciplinary physics and related areas of science and technology)

  8. Josephson Arbitrary Waveform Synthesis With Multilevel Pulse Biasing

    Science.gov (United States)

    Brevik, Justus A.; Flowers-Jacobs, Nathan E.; Fox, Anna E.; Golden, Evan B.; Dresselhaus, Paul D.; Benz, Samuel P.

    2017-01-01

    We describe the implementation of new commercial pulse-bias electronics that have enabled an improvement in the generation of quantum-accurate waveforms both with and without low-frequency compensation biases. We have used these electronics to apply a multilevel pulse bias to the Josephson arbitrary waveform synthesizer and have generated, for the first time, a quantum-accurate bipolar sinusoidal waveform without the use of a low-frequency compensation bias current. This uncompensated 1 kHz waveform was synthesized with an rms amplitude of 325 mV and maintained its quantum accuracy over a1.5 mA operating current range. The same technique and equipment was also used to synthesize a quantum-accurate 1 MHz sinusoid with a 1.2 mA operating margin. In addition, we have synthesized a compensated 1 kHz sinusoid with an rms amplitude of 1 V and a 2.7 mA operating margin. PMID:28736494

  9. A 70 kV solid-state high voltage pulse generator based on saturable pulse transformer.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2014-02-01

    High voltage pulse generators are widely applied in many fields. In recent years, solid-state and operating at repetitive mode are the most important developing trends of high voltage pulse generators. A solid-state high voltage pulse generator based on saturable pulse transformer is proposed in this paper. The proposed generator is consisted of three parts. They are charging system, triggering system, and the major loop. Saturable pulse transformer is the key component of the whole generator, which acts as a step-up transformer and main switch during working process of this generator. The circuit and working principles of the proposed pulse generator are introduced first in this paper, and the saturable pulse transformer used in this generator is introduced in detail. Circuit of the major loop is simulated to verify the design of the system. Demonstration experiments are carried out, and the results show that when the primary energy storage capacitor is charged to a high voltage, such as 2.5 kV, a voltage with amplitude of 86 kV can be achieved on the secondary winding. The magnetic core of saturable pulse transformer is saturated deeply and the saturable inductance of the secondary windings is very small. The switch function of the saturable pulse transformer can be realized ideally. Therefore, a 71 kV output voltage pulse is formed on the load. Moreover, the magnetic core of the saturable pulse transformer can be reset automatically.

  10. Best voltage bias-flipping strategy towards maximum piezoelectric power generation

    International Nuclear Information System (INIS)

    Liang, Junrui; Chung, Henry Shu-Hung

    2013-01-01

    In piezoelectric energy harvesting (PEH) systems, energy extracted from piezoelectric structure can be increased by making piezoelectric voltage in phase with vibration velocity and raising the voltage amplitude. Such voltage manipulations can be realized by synchronously flipping the piezoelectric voltage with respect to a bias dc source at every displacement extremum. Given that net harvested energy is obtained by deducting dissipated energy from total extracted energy, a sophisticated voltage bias-flipping scheme, which can maximize extracted energy at low dissipative cost, is required towards harvested energy optimization. This paper extends the state of the art by proposing the best bias-flip strategy, which is delivered on conceptual synchronized multiple bias-flip (SMBF) interface circuits. The proposed strategy coordinates both requirements on larger voltage change in synchronized instant for more extracted energy and smaller voltage change in each bias-flip action for less dissipated energy. It not only leads to further enhancement of harvesting capability beyond existing solutions, but also provides an unprecedented physical insight on maximum achievable harvesting capability of PEH interface circuit

  11. Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

    Science.gov (United States)

    Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

    2018-04-01

    In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

  12. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...

  13. A high-voltage equipment (high voltage supply, high voltage pulse generators, resonant charging inductance, synchro-instruments for gyrotron frequency measurements) for plasma applications

    International Nuclear Information System (INIS)

    Spassov, Velin

    1996-01-01

    This document reports my activities as visitor-professor at the Gyrotron Project - INPE Plasma Laboratory. The main objective of my activities was designing, construction and testing a suitable high-voltage pulse generator for plasma applications, and efforts were concentrated on the following points: Design of high-voltage resonant power supply with tunable output (0 - 50 kV) for line-type high voltage pulse generator; design of line-type pulse generator (4 microseconds pulse duration, 0 - 25 kV tunable voltage) for non linear loads such as a gyrotron and P III reactor; design of resonant charging inductance for resonant line-type pulse generator, and design of high resolution synchro instrument for gyrotron frequency measurement. (author)

  14. Dose-rate effects of low-dropout voltage regulator at various biases

    International Nuclear Information System (INIS)

    Wang Yiyuan; Zheng Yuzhan; Gao Bo; Chen Rui; Fei Wuxiong; Lu Wu; Ren Diyuan

    2010-01-01

    A low-dropout voltage regulator, LM2941, was irradiated by 60 Co γ-rays at various dose rates and biases for investigating the total dose and dose rate effects. The radiation responses show that the key electrical parameters, including its output and dropout voltage, and the maximum output current, are sensitive to total dose and dose rates, and are significantly degraded at low dose rate and zero bias. The integrated circuits damage change with the dose rates and biases, and the dose-rate effects are relative to its electric field. (authors)

  15. Effect of DC voltage pulses on memristor behavior.

    Energy Technology Data Exchange (ETDEWEB)

    Evans, Brian R.

    2013-10-01

    Current knowledge of memristor behavior is limited to a few physical models of which little comprehensive data collection has taken place. The purpose of this research is to collect data in search of exploitable memristor behavior by designing and implementing tests on a HP Labs Rev2 Memristor Test Board. The results are then graphed in their optimal format for conceptualizing behavioral patterns. This series of experiments has concluded the existence of an additional memristor state affecting the behavior of memristors when pulsed with positively polarized DC voltages. This effect has been observed across multiple memristors and data sets. The following pages outline the process that led to the hypothetical existence and eventual proof of this additional state of memristor behavior.

  16. Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

    Science.gov (United States)

    Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

    We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

  17. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  18. Pulsed voltage electrospray ion source and method for preventing analyte electrolysis

    Science.gov (United States)

    Kertesz, Vilmos [Knoxville, TN; Van Berkel, Gary [Clinton, TN

    2011-12-27

    An electrospray ion source and method of operation includes the application of pulsed voltage to prevent electrolysis of analytes with a low electrochemical potential. The electrospray ion source can include an emitter, a counter electrode, and a power supply. The emitter can include a liquid conduit, a primary working electrode having a liquid contacting surface, and a spray tip, where the liquid conduit and the working electrode are in liquid communication. The counter electrode can be proximate to, but separated from, the spray tip. The power system can supply voltage to the working electrode in the form of a pulse wave, where the pulse wave oscillates between at least an energized voltage and a relaxation voltage. The relaxation duration of the relaxation voltage can range from 1 millisecond to 35 milliseconds. The pulse duration of the energized voltage can be less than 1 millisecond and the frequency of the pulse wave can range from 30 to 800 Hz.

  19. A 50–60 GHz mm-wave rectifier with bulk voltage bias in 65-nm CMOS

    NARCIS (Netherlands)

    Gao, H.; Matters-Kammerer, M.; Harpe, P.; Baltus, P.

    2016-01-01

    This letter presents a 50∼60 GHz fully integrated 3-stage rectifier with bulk voltage bias for threshold voltage modulation in a 65-nm CMOS technology, which can be integrated in a mm-wave hybrid rectifier structure as the main rectifier. In this letter, the new technique of bulk voltage bias is

  20. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; hide

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  1. Comparison of the quantitative analysis performance between pulsed voltage atom probe and pulsed laser atom probe

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, J., E-mail: takahashi.3ct.jun@jp.nssmc.com [Advanced Technology Research Laboratories, Nippon Steel & Sumitomo Metal Corporation, 20-1 Shintomi, Futtsu-city, Chiba 293-8511 (Japan); Kawakami, K. [Advanced Technology Research Laboratories, Nippon Steel & Sumitomo Metal Corporation, 20-1 Shintomi, Futtsu-city, Chiba 293-8511 (Japan); Raabe, D. [Max-Planck Institut für Eisenforschung GmbH, Department for Microstructure Physics and Alloy Design, Max-Planck-Str. 1, 40237 Düsseldorf (Germany)

    2017-04-15

    Highlights: • Quantitative analysis in Fe-Cu alloy was investigated in voltage and laser atom probe. • In voltage-mode, apparent Cu concentration exceeded actual concentration at 20–40 K. • In laser-mode, the concentration never exceeded the actual concentration even at 20 K. • Detection loss was prevented due to the rise in tip surface temperature in laser-mode. • Preferential evaporation of solute Cu was reduced in laser-mode. - Abstract: The difference in quantitative analysis performance between the voltage-mode and laser-mode of a local electrode atom probe (LEAP3000X HR) was investigated using a Fe-Cu binary model alloy. Solute copper atoms in ferritic iron preferentially field evaporate because of their significantly lower evaporation field than the matrix iron, and thus, the apparent concentration of solute copper tends to be lower than the actual concentration. However, in voltage-mode, the apparent concentration was higher than the actual concentration at 40 K or less due to a detection loss of matrix iron, and the concentration decreased with increasing specimen temperature due to the preferential evaporation of solute copper. On the other hand, in laser-mode, the apparent concentration never exceeded the actual concentration, even at lower temperatures (20 K), and this mode showed better quantitative performance over a wide range of specimen temperatures. These results indicate that the pulsed laser atom probe prevents both detection loss and preferential evaporation under a wide range of measurement conditions.

  2. Design of auto-control high-voltage control system of pulsed neutron generator

    International Nuclear Information System (INIS)

    Lv Juntao

    2008-01-01

    It is difficult to produce multiple anode controlling time sequences under different logging mode for the high-voltage control system of the conventional pulsed neutron generator. It is also difficult realize sequential control among anode high-voltage, filament power supply and target voltage to make neutron yield stable. To these problems, an auto-control high-voltage system of neutron pulsed generator was designed. It not only can achieve anode high-voltage double blast time sequences, which can measure multiple neutron blast time sequences such as Σ, activated spectrum, etc. under inelastic scattering mode, but also can realize neutron generator real-time measurement of multi-state parameters and auto-control such as target voltage pulse width modulation (PWM), filament current, anode current, etc., there by it can produce stable neutron yield and realize stable and accurate measurement of the pulsed neutron full spectral loging tool. (authors)

  3. Multiplex Outputs ns Grade High-voltage Fast Pulse Generator Study

    International Nuclear Information System (INIS)

    Wang Xin; Chen Kenan

    2009-01-01

    Using a double-grid hydrogen thyratron, a fast pulse generator with four outputs, high-voltage, low jitter, was made to use at special occasion.In this paper, the basic structure of pulser, switching theory and double-grid driving of hydrogen thyratron was introduced, and also, the effects of grids driving pulses characteristics, the delay between too grids driving, the reservoir heater voltage and cathode heater voltage on the output are carefully examined in experiments. The pulse generator with four outputs was made to producing pulses with amplitude up to 4 kV, rise-time less than 15 ns and jitter less than 3 ns. (authors)

  4. Environmental and biotechnological applications of high-voltage pulsed discharges in water

    International Nuclear Information System (INIS)

    Sato, Masayuki

    2008-01-01

    A high-voltage pulse has wide application in fields such as chemistry, physics and biology and their combinations. The high-voltage pulse forms two kinds of physical processes in water, namely (a) a pulsed electric field (PEF) in the parallel electrode configuration and (b) plasma generation by a pulsed discharge in the water phase with a concentrated electric field. The PEF can be used for inactivation of bacteria in liquid foods as a non-thermal process, and the underwater plasma is applicable not only for the decomposition of organic materials in water but also for biological treatment of wastewater. These discharge states are controlled mainly by the applied pulse voltage and the electrode shape. Some examples of environmental and biotechnological applications of a high-voltage pulse are reviewed.

  5. Analog Amplitude Modulation of a High Voltage, Solid State Inductive Adder, Pulse Generator Using MOSFETS

    International Nuclear Information System (INIS)

    Gower, E J; Sullivan, J S

    2002-01-01

    High voltage, solid state, inductive adder, pulse generators have found increasing application as fast kicker pulse modulators for charged particle beams. The solid state, inductive adder, pulse generator is similar in operation to the linear induction accelerator. The main difference is that the solid state, adder couples energy by transformer action from multiple primaries to a voltage summing stalk, instead of an electron beam. Ideally, the inductive adder produces a rectangular voltage pulse at the load. In reality, there is usually some voltage variation at the load due to droop on primary circuit storage capacitors, or, temporal variations in the load impedance. Power MOSFET circuits have been developed to provide analog modulation of the output voltage amplitude of a solid state, inductive adder, pulse generator. The modulation is achieved by including MOSFET based, variable subtraction circuits in the multiple primary stack. The subtraction circuits can be used to compensate for voltage droop, or, to tailor the output pulse amplitude to provide a desired effect in the load. Power MOSFET subtraction circuits have been developed to modulate short, temporal (60-400 ns), voltage and current pulses. MOSFET devices have been tested up to 20 amps and 800 Volts with a band pass of 50 MHz. An analog modulation cell has been tested in a five cell high, voltage adder stack

  6. Modeling generalized interline power-flow controller (GIPFC using 48-pulse voltage source converters

    Directory of Open Access Journals (Sweden)

    Amir Ghorbani

    2018-05-01

    Full Text Available Generalized interline power-flow controller (GIPFC is one of the voltage-source controller (VSC-based flexible AC transmission system (FACTS controllers that can independently regulate the power-flow over each transmission line of a multiline system. This paper presents the modeling and performance analysis of GIPFC based on 48-pulsed voltage-source converters. This paper deals with a cascaded multilevel converter model, which is a 48-pulse (three levels voltage source converter. The voltage source converter described in this paper is a harmonic neutralized, 48-pulse GTO converter. The GIPFC controller is based on d-q orthogonal coordinates. The algorithm is verified using simulations in MATLAB/Simulink environment. Comparisons between unified power flow controller (UPFC and GIPFC are also included. Keywords: Generalized interline power-flow controller (GIPFC, Voltage source converter (VCS, 48-pulse GTO converter

  7. Bias voltage effect on electron tunneling across a junction with a ferroelectric–ferromagnetic two-phase composite barrier

    International Nuclear Information System (INIS)

    Wang Jian; Ju Sheng; Li, Z.Y.

    2012-01-01

    The effect of bias voltage on electron tunneling across a junction with a ferroelectric–ferromagnetic composite barrier is investigated theoretically. Because of the inversion symmetry breaking of the spontaneous ferroelectric polarization, bias voltage dependence of the electron tunneling shows significant differences between the positive bias and the negative one. The differences of spin filtering or tunnel magnetoresistance increase with the increasing absolute value of bias voltage. Such direction preferred electron tunneling is found intimately related with the unusual asymmetry of the electrical potential profile in two-phase composite barrier and provides a unique change to realize rectifying functions in spintronics. - Highlights: ► Electron tunneling across a ferroelectric–ferromagnetic composite barrier junction. ► TMR effect is different under the same value but opposite direction bias voltage. ► This directionality of the electron tunneling enhances with increasing bias voltage.

  8. The pulse-driven AC Josephson voltage normal

    International Nuclear Information System (INIS)

    Kieler, Oliver

    2016-01-01

    In this contribution quantum precise alternating-voltage sources are presented, which make the generation of arbitrary wave forms with highest spectral purity with a high bandwidth from DC up to the MHz range possible. Heartpiece of these Josephson voltage normals is a serial circuit of many thousand Josephson contacts, which make by irradiation with high-frequency radiation (microwaves) the generation of highly precise voltage values possible. Thereby in the current-voltage characteristics stages of constant voltage, so called Shapiro stages, occur. Illustratively these stages can be described by the transfer of a certain number of flux quanta through the Josephson contacts.

  9. Thyristor current-pulse generator for betatron electromagnet with independent low-voltage supply

    International Nuclear Information System (INIS)

    Baginskii, B.A.; Makarevich, V.N.; Shtein, M.M.

    1989-01-01

    A thyristor generator is described that produces unipolar current pulses in the winding of a betatron electromagnet. The voltage on the electro-magnet is increased and the shape of the current pulses is improved by use of an intermediate inductive storage device. The current pulses have a duration of 11 msec, an amplitude of 190 A, and a repetition frequency of 50 Hz. The maximum magnetic-field energy is 450 J, the voltage on the electromagnet winding is 1.5 kV, and the supply voltage is 27 V

  10. Review of the Dynamics of Coalescence and Demulsification by High-Voltage Pulsed Electric Fields

    Directory of Open Access Journals (Sweden)

    Ye Peng

    2016-01-01

    Full Text Available The coalescence of droplets in oil can be implemented rapidly by high-voltage pulse electric field, which is an effective demulsification dehydration technological method. At present, it is widely believed that the main reason of pulse electric field promoting droplets coalescence is the dipole coalescence and oscillation coalescence in pulse electric field, and the optimal coalescence pulse electric field parameters exist. Around the above content, the dynamics of high-voltage pulse electric field promoting the coalescence of emulsified droplets is studied by researchers domestically and abroad. By review, the progress of high-voltage pulse electric field demulsification technology can get a better understanding, which has an effect of throwing a sprat to catch a whale on promoting the industrial application.

  11. Electrical Tree Initiation and Growth in Silicone Rubber under Combined DC-Pulse Voltage

    Directory of Open Access Journals (Sweden)

    Tao Han

    2018-03-01

    Full Text Available Electrical tree is a serious threat to silicone rubber (SIR insulation and can even cause breakdown. Electrical trees under alternating current (AC and direct current (DC voltage have been widely researched. While there are pulses in high-voltage direct current (HVDC cables under operating conditions caused by lightning and operating overvoltage in the power system, little research has been reported about trees under combined DC-pulse voltage. Their inception and growth mechanism is still not clear. In this paper, electrical trees are studied under several types of combined DC-pulse voltage. The initiation and growth process was recorded by a digital microscope system. The experimental results indicate that the inception pulse voltage is different under each voltage type and is influenced by the combined DC. The initial tree has two structures, determined by the pulse polarity. With increased DC prestressing time, tree inception pulse voltage with the same polarity is clearly decreased. Moreover, a special initial bubble tree was observed after the prestressing DC.

  12. Low Voltage Electrolytic Capacitor Pulse Forming Inductive Network for Electric Weapons

    National Research Council Canada - National Science Library

    Mays, Thomas A

    2006-01-01

    .... Pulsed alternators potentially have the same maintenance issues as other motor-generator sets, so a solid-state system would be desirable, but high voltage capacitor systems are not robust enough for the field...

  13. High voltage pulse system for the streamer chamber supply of the GIBS spectrometer

    International Nuclear Information System (INIS)

    Aksinenko, V.D.; Glagoleva, N.S.; Dement'ev, E.A.; Kaminskij, N.I.; Matyushin, A.T.; Matyushin, V.T.; Rozhnyatovskaya, S.A.; Ryakhovskij, V.N.; Nurgozhin, N.N.; Khusainov, E.K.

    1987-01-01

    Results of development and testing of high voltage pulse system HVPS for the streamer chamber supply of the GIBS spectrometer are presented. HVPS consists of the following basic blocks: nanosecond pulse high voltage generator, high voltage charging supply, trigger generator, chamber parameter control devices, gas-oil vacuuming supply systems, auxiliary and fire-prevention devices. The system blocks are described. Experimental results of HVPC testing are presented. HVPC provides a reliable (10 5 operations) of streamer chamber supply with high voltage pulse parameters: amplitude - 500 kV, amplitude instability (0.5-1.5)%, pulse duration - 12 ns, delay time - 500 ns, delay instability (2.5-5)%, mean frequency of output a signals - 0.1 Hz

  14. Comparison of the quantitative analysis performance between pulsed voltage atom probe and pulsed laser atom probe.

    Science.gov (United States)

    Takahashi, J; Kawakami, K; Raabe, D

    2017-04-01

    The difference in quantitative analysis performance between the voltage-mode and laser-mode of a local electrode atom probe (LEAP3000X HR) was investigated using a Fe-Cu binary model alloy. Solute copper atoms in ferritic iron preferentially field evaporate because of their significantly lower evaporation field than the matrix iron, and thus, the apparent concentration of solute copper tends to be lower than the actual concentration. However, in voltage-mode, the apparent concentration was higher than the actual concentration at 40K or less due to a detection loss of matrix iron, and the concentration decreased with increasing specimen temperature due to the preferential evaporation of solute copper. On the other hand, in laser-mode, the apparent concentration never exceeded the actual concentration, even at lower temperatures (20K), and this mode showed better quantitative performance over a wide range of specimen temperatures. These results indicate that the pulsed laser atom probe prevents both detection loss and preferential evaporation under a wide range of measurement conditions. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

    KAUST Repository

    Tayyab, Umais

    2017-12-03

    An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC voltage. The incorporated op-amp is self-biased, meaning no external supply is needed but rather it uses part of the harvested energy for its biasing. The proposed active doubler achieves maximum power conversion efficiency (PCE) of 61.7% for a 200 Hz sinusoidal input of 0.8 V for a 20 K load resistor. This efficiency is 2 times more when compared with the passive voltage doubler. The rectified DC voltage is almost 2 times more than conventional passive doubler. The relation between PCE and the load resistor is also presented. The proposed active voltage doubler is designed and simulated in LF 0.15 μm CMOS process technology using Cadence virtuoso tool.

  16. High-voltage nanosecond Marx generator with quasi-rectangular pulses

    International Nuclear Information System (INIS)

    Bulan, V.V.; Grabovskij, E.V.; Gribov, A.N.; Luzhnov, V.G.

    1999-01-01

    The automated high-voltage nanosecond generator, forming single pulses of any polarity on the load of 17 Ohm with polarity voltage from 100 up to 300 kV at the semiheight of 80 ns and the front of 7 ns is described. The generator is assembled on the basis of low-inductive capacitors, which by discharge form the pulse, close by form to rectangular one [ru

  17. The development of long pulse high voltage power supply for MNI-1U neutral beam injector

    International Nuclear Information System (INIS)

    Detai Wang

    1989-01-01

    A high power long pulse high voltage power supply (HVPS) for MNI- 1 U neutral beam injector (NBI) is described. This HVPS is used as a switching regulator with a duty cycle of 1/100, the specifications of circuit are as follows, output pulse voltage 50kv, pulse current 30A, pulse width 50ms, rise-time and fall-time of the voltage are less than 25 μs, stability of the pulse flat is better than 0.5%, regulation response time of the pulse voltage less than 30 μs can be attained. It is also used as a stable DC HVPS, output voltage is 1 to 100kv, current is 1 to 5A. If regulation tube is shunted with high power resistor in parallel, the current can be extended to 10 A, stability of the output voltage or current is better than 0.1%. Now, the HVPS has been put into operation for MNI- 1 U NBI and PIG ion source made in French. 3 refs., 5 figs

  18. Mitigation of Flicker using STATCOM with Three-Level 12-pulse Voltage Source Inverter

    OpenAIRE

    Ali Z a'fari

    2011-01-01

    Voltage flicker is a disturbance in electrical power systems. The reason for this disturbance is mainly the large nonlinear loads such as electric arc furnaces. Synchronous static compensator (STATCOM) is considered as a proper technique to mitigate the voltage flicker. Application of more suitable and precise power electronic converter leads to a more precise performance of the compensator. In this paper a three-level 12-pulse voltage source inverter (VSI) with a 12-term...

  19. MOSFET-based high voltage short pulse generator for ultrasonic transducer excitation

    Science.gov (United States)

    Hidayat, Darmawan; Setianto, Syafei, Nendi Suhendi; Wibawa, Bambang Mukti

    2018-02-01

    This paper presents the generation of a high-voltage short pulse for the excitation of high frequency ultrasonic transducers. This is highly required in the purpose of various ultrasonic-based evaluations, particularly when high resolution measurement is necessary. A high voltage (+760 V) DC voltage source was pulsated by an ultrafast switching MOSFET which was driven by a pulse generator circuit consisting of an astable multivibrator, a one-shot multivibrator with Schmitt trigger input and a high current MOSFET driver. The generated pulses excited a 200-kHz and a 1-MHz ultrasonic transducers and tested in the transmission mode propagation to evaluate the performances of the generated pulse. The test results showed the generator were able to produce negative spike pulses up to -760 V voltage with the shortest time-width of 107.1 nanosecond. The transmission-received ultrasonic waves show frequency oscillation at 200 and 961 kHz and their amplitudes varied with the voltage of excitation pulse. These results conclude that the developed pulse generator is applicable to excite transducer for the generation of high frequency ultrasonic waves.

  20. Novel zero voltage transition pulse width modulation flyback converter

    Science.gov (United States)

    Adib, Ehsan; Farzanehfard, Hosein

    2010-09-01

    In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

  1. Linearity optimizations of analog ring resonator modulators through bias voltage adjustments

    Science.gov (United States)

    Hosseinzadeh, Arash; Middlebrook, Christopher T.

    2018-03-01

    The linearity of ring resonator modulator (RRM) in microwave photonic links is studied in terms of instantaneous bandwidth, fabrication tolerances, and operational bandwidth. A proposed bias voltage adjustment method is shown to maximize spur-free dynamic range (SFDR) at instantaneous bandwidths required by microwave photonic link (MPL) applications while also mitigating RRM fabrication tolerances effects. The proposed bias voltage adjustment method shows RRM SFDR improvement of ∼5.8 dB versus common Mach-Zehnder modulators at 500 MHz instantaneous bandwidth. Analyzing operational bandwidth effects on SFDR shows RRMs can be promising electro-optic modulators for MPL applications which require high operational frequencies while in a limited bandwidth such as radio-over-fiber 60 GHz wireless network access.

  2. Non-equilibrium scaling analysis of the Kondo model with voltage bias

    International Nuclear Information System (INIS)

    Fritsch, Peter; Kehrein, Stefan

    2009-01-01

    The quintessential description of Kondo physics in equilibrium is obtained within a scaling picture that shows the buildup of Kondo screening at low temperature. For the non-equilibrium Kondo model with a voltage bias, the key new feature are decoherence effects due to the current across the impurity. In the present paper, we show how one can develop a consistent framework for studying the non-equilibrium Kondo model within a scaling picture of infinitesimal unitary transformations (flow equations). Decoherence effects appear naturally in third order of the β-function and dominate the Hamiltonian flow for sufficiently large voltage bias. We work out the spin dynamics in non-equilibrium and compare it with finite temperature equilibrium results. In particular, we report on the behavior of the static spin susceptibility including leading logarithmic corrections and compare it with the celebrated equilibrium result as a function of temperature.

  3. Influence of bias voltage on the stability of CsI photocathodes exposed to air

    CERN Document Server

    Nitti, M A; Nappi, E; Singh, B K; Valentini, A

    2002-01-01

    We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190-850 nm.

  4. Development of voltage sensitive preamplifier using pulse ionization chamber emanometer

    International Nuclear Information System (INIS)

    Huang He; Peng Xincun; Fu Zhijian; Zhu Zhifu; Zhang Xiongjie

    2011-01-01

    The voltage preamplifier for the instrument that detecting the Rn and its radon daughter elements is designed. The related circuit are designed and tested. It shows that this preamplifier satisfies the requirement of nuclear measurement system. (authors)

  5. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  6. Initial position estimation method for permanent magnet synchronous motor based on improved pulse voltage injection

    DEFF Research Database (Denmark)

    Wang, Z.; Lu, K.; Ye, Y.

    2011-01-01

    According to saliency of permanent magnet synchronous motor (PMSM), the information of rotor position is implied in performance of stator inductances due to the magnetic saturation effect. Researches focused on the initial rotor position estimation of PMSM by injecting modulated pulse voltage...... vectors. The relationship between the inductance variations and voltage vector positions was studied. The inductance variation effect on estimation accuracy was studied as well. An improved five-pulses injection method was proposed, to improve the estimation accuracy by choosing optimaized voltage vectors...

  7. High voltage nanosecond generator with pulse repetition rate of 1,000 p.p.s.

    Energy Technology Data Exchange (ETDEWEB)

    Gubanov, V P; Korovin, S D; Stepchenko, A S [High Current Electronics Institute, Tomsk (Russian Federation)

    1997-12-31

    A compact high voltage nanosecond generator is described with a pulse repetition rate up to 1000 p.p.s. The generator includes a 30-Ohm coaxial forming line charged by a built-in Tesla transformer with a high coupling coefficient, and a high voltage (N{sub 2}) gas gap switch with gas blowing between the electrodes. The maximum forming line charge voltage is 450 kV, the pulse duration is about 4 ns, and its amplitude for a matched load is up to 200 kV. (author). 3 figs., 9 refs.

  8. Investigations of a voltage-biased microwave cavity for quantum measurements of nanomechanical resonators

    Science.gov (United States)

    Rouxinol, Francisco; Hao, Hugo; Lahaye, Matt

    2015-03-01

    Quantum electromechanical systems incorporating superconducting qubits have received extensive interest in recent years due to their promising prospects for studying fundamental topics of quantum mechanics such as quantum measurement, entanglement and decoherence in new macroscopic limits, also for their potential as elements in technological applications in quantum information network and weak force detector, to name a few. In this presentation we will discuss ours efforts toward to devise an electromechanical circuit to strongly couple a nanomechanical resonator to a superconductor qubit, where a high voltage dc-bias is required, to study quantum behavior of a mechanical resonator. Preliminary results of our latest generation of devices integrating a superconductor qubit into a high-Q voltage biased microwave cavities are presented. Developments in the circuit design to couple a mechanical resonator to a qubit in the high-Q voltage bias CPW cavity is discussed as well prospects of achieving single-phonon measurement resolution. National Science Foundation under Grant No. DMR-1056423 and Grant No. DMR-1312421.

  9. Relationship between bias voltage and microstructure as well as properties of CrAlYN films

    International Nuclear Information System (INIS)

    Fu Ying-Ying; Li Hong-Xuan; Ji Li; Liu Xiao-Hong; Zhou Hui-Di; Chen Jian-Min; Liu Liu

    2015-01-01

    In this work, a series of CrAlYN films doped with 1 at.% yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages. The effects of bias voltage on microstructure and properties of the CrAlYN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher Al content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000 °C, and good friction and wear properties at 600 and 800 °C, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures (i.e., 200 and 400 °C) due to the serious abrasive wear. (paper)

  10. Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

    International Nuclear Information System (INIS)

    Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

  11. Quantum dynamics of a Josephson junction driven cavity mode system in the presence of voltage bias noise

    Science.gov (United States)

    Wang, Hui; Blencowe, M. P.; Armour, A. D.; Rimberg, A. J.

    2017-09-01

    We give a semiclassical analysis of the average photon number as well as photon number variance (Fano factor F ) for a Josephson junction (JJ) embedded microwave cavity system, where the JJ is subject to a fluctuating (i.e., noisy) bias voltage with finite dc average. Through the ac Josephson effect, the dc voltage bias drives the effectively nonlinear microwave cavity mode into an amplitude squeezed state (F Armour et al., Phys. Rev. Lett. 111, 247001 (2013), 10.1103/PhysRevLett.111.247001], but bias noise acts to degrade this squeezing. We find that the sensitivity of the Fano factor to bias voltage noise depends qualitatively on which stable fixed point regime the system is in for the corresponding classical nonlinear steady-state dynamics. Furthermore, we show that the impact of voltage bias noise is most significant when the cavity is excited to states with large average photon number.

  12. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  13. Characterization of diamond-like carbon coatings prepared by pulsed bias cathodic vacuum arc deposition

    International Nuclear Information System (INIS)

    Wu Jinbao; Chang, J.-J.; Li, M.-Y.; Leu, M.-S.; Li, A.-K.

    2007-01-01

    Hydrogen free diamond-like carbon (DLC) coatings have been deposited on Si(100) and stainless steel substrates by cathodic vacuum arc plasma deposition with pulse voltage. Adherent deposits on silicon can be obtained through applying gradient Ti/TiC/DLC layers. A pulse bias of - 100 V was applied to the substrate in order to obtain a denser structure of DLC coating approximately 1 μm thick. The microstructure and hardness value of DLC films were analyzed by using X-ray photoelectron spectroscopy and nano-indenter. The experimental results show that the duty cycle strongly influenced the hardness and sp 3 content of the DLC coatings. We observed that when the duty cycle was raised from 2.5% to 12.5%, the hardness increased from 26 GPa to 49 GPa, and the sp 3 fraction of the DLC films measured by XPS increased from 39% to 50.8 % as well. But at constant duty cycle, say 12.5%, the hardness is dropped from 49 to 14 GPa in proportion to the increase of residual gas pressure from 3 x 10 -3 Pa to 1 Pa. As the residual gas pressure increased, collisional phenomenon will decrease the energy of the ions. Ions with low energy make more graphitic carbon links and result in a low hardness value

  14. Preparation of TiN films by arc ion plating using dc and pulsed biases

    International Nuclear Information System (INIS)

    Huang, M.D.; Lee, Y.P.; Dong, C.; Lin, G.Q.; Sun, C.; Wen, L.S.

    2004-01-01

    TiN hard coatings were prepared by arc ion plating with both direct current (dc) and pulsed biases. An extensive investigation was undertaken to determine the effects of the substrate temperature on the mechanical properties and the microstructures of films. The results show that the substrate temperature is decreased evidently when a pulsed bias instead of a dc one is employed. At the same time, the microstructures and the properties are also improved. A low-temperature arc ion plating can be realized by using pulsed biases

  15. Application of Matteucci Voltage Pulses of Amorphous Wires in ...

    African Journals Online (AJOL)

    For instance, if the zero amplitude Matteucci voltage was being obtained at a twist angle of 45° clockwise, it will now be obtained at an angle of the same magnitude, but for a counter-clockwise twist. The physics of this latter phenomenon too would be of interest to researchers of physics of magnetism. J. agric. Sci. technol.

  16. CO2-Tea pulse clipping using pulsed high voltage preionization for high spatial resolution I.R. Lidar systems

    Directory of Open Access Journals (Sweden)

    Gasmi Taieb

    2018-01-01

    Full Text Available An extra-cavity CO2-TEA laser pulse clipper for high spatial resolution atmospheric monitoring is presented. The clipper uses pulsed high voltageto facilitate the breakdown of the gas within the clipper cell. Complete extinction of the nitrogen tail, that degrades the range resolution of LIDARS, is obtained at pressures from 375 up to 1500 Torr for nitrogen and argon gases whereas an attenuation coefficient of almost 102 is achieved for helium. Excellent energy stability and pulse width repeatability were achieved using high voltage pre-ionized gas technique.

  17. CO2-Tea pulse clipping using pulsed high voltage preionization for high spatial resolution I.R. Lidar systems

    Science.gov (United States)

    Gasmi, Taieb

    2018-04-01

    An extra-cavity CO2-TEA laser pulse clipper for high spatial resolution atmospheric monitoring is presented. The clipper uses pulsed high voltageto facilitate the breakdown of the gas within the clipper cell. Complete extinction of the nitrogen tail, that degrades the range resolution of LIDARS, is obtained at pressures from 375 up to 1500 Torr for nitrogen and argon gases whereas an attenuation coefficient of almost 102 is achieved for helium. Excellent energy stability and pulse width repeatability were achieved using high voltage pre-ionized gas technique.

  18. Forward voltage short-pulse technique for measuring high power laser array junction temperature

    Science.gov (United States)

    Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

    2012-01-01

    The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

  19. A high-voltage resonant converter for pulsed magnets

    International Nuclear Information System (INIS)

    Rafael, F.S.; Lira, A.C.; Apfelbaum, J.; Pomilio, J.A.

    1992-01-01

    A 500-W, 25-kV, parallel-loaded resonant converter has been built in order to feed the LNLS ring kicker magnets. The use of high frequency permits reduction of the transformer and filter sizes. The tank components are the transformer leakage inductance and winding capacitance. The switching frequency is 20 kHz, limited by the tank circuit characteristic. The load is an LC Pulse-Forming Network, which is discharged on the load by a thyratron tube. The current pulse rise and fall times are about 100 ns and the flat top is 200 ns, at 800 A. (author) 3 refs.; 7 figs

  20. Effect of inductance between middle and outer cylinders on diode voltage of pulse forming line

    International Nuclear Information System (INIS)

    Liu Jinliang; Wang Xinxin

    2008-01-01

    Based on the experimental device of the water spiral pulse forming line(PFL) type electron beam accelerator, the effect of inductance between the middle and outer cylinders of PFL on diode voltage is theoretically and experimentally studied in this paper. The formulae are introduced, with which the effect of inductance on diode voltage is calculated. In addition, the diode voltage waveform is simulated through the Pspice software. The theoretical and simulated results agree well with the experimental results, which show that large inductance between middle and outer cylinders can shorten the waveform flat part of diode voltage, increase waveform rise time and reduce the diode peak voltage. When the inductance is smaller than 200 nH, a nearly square voltage waveform can be obtained in field-emission diode. (authors)

  1. Effects of detector–source distance and detector bias voltage variations on time resolution of general purpose plastic scintillation detectors

    International Nuclear Information System (INIS)

    Ermis, E.E.; Celiktas, C.

    2012-01-01

    Effects of source-detector distance and the detector bias voltage variations on time resolution of a general purpose plastic scintillation detector such as BC400 were investigated. 133 Ba and 207 Bi calibration sources with and without collimator were used in the present work. Optimum source-detector distance and bias voltage values were determined for the best time resolution by using leading edge timing method. Effect of the collimator usage on time resolution was also investigated. - Highlights: ► Effect of the source-detector distance on time spectra was investigated. ► Effect of the detector bias voltage variations on time spectra was examined. ► Optimum detector–source distance was determined for the best time resolution. ► Optimum detector bias voltage was determined for the best time resolution. ► 133 Ba and 207 Bi radioisotopes were used.

  2. Simulations of momentum transfer process between solar wind plasma and bias voltage tethers of electric sail thruster

    Science.gov (United States)

    Xia, Guangqing; Han, Yajie; Chen, Liuwei; Wei, Yanming; Yu, Yang; Chen, Maolin

    2018-06-01

    The interaction between the solar wind plasma and the bias voltage of long tethers is the basic mechanism of the electric sail thruster. The momentum transfer process between the solar wind plasma and electric tethers was investigated using a 2D full particle PIC method. The coupled electric field distribution and deflected ion trajectory under different bias voltages were compared, and the influence of bias voltage on momentum transfer process was analyzed. The results show that the high potential of the bias voltage of long tethers will slow down, stagnate, reflect and deflect a large number of ions, so that ion cavities are formed in the vicinity of the tether, and the ions will transmit the axial momentum to the sail tethers to produce the thrust. Compared to the singe tether, double tethers show a better thrust performance.

  3. Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

    Science.gov (United States)

    Mohammadi, Yawar; Moradian, Rostam; Shirzadi Tabar, Farzad

    2014-09-01

    We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single-layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r3 power law decay for the long-distance behavior of the screened Coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when μ exceeds √{2}γ, are similar to that of doped SLG only depending on doping. While for μ<√{2}γ, its screening properties are combination of SLG and AA-stacked bilayer graphene screening properties and they are determined by doping and the interlayer hopping energy.

  4. Regression Analysis of the Effect of Bias Voltage on Nano- and Macrotribological Properties of Diamond-Like Carbon Films Deposited by a Filtered Cathodic Vacuum Arc Ion-Plating Method

    Directory of Open Access Journals (Sweden)

    Shojiro Miyake

    2014-01-01

    Full Text Available Diamond-like carbon (DLC films are deposited by bend filtered cathodic vacuum arc (FCVA technique with DC and pulsed bias voltage. The effects of varying bias voltage on nanoindentation and nanowear properties were evaluated by atomic force microscopy. DLC films deposited with DC bias voltage of −50 V exhibited the greatest hardness at approximately 50 GPa, a low modulus of dissipation, low elastic modulus to nanoindentation hardness ratio, and high nanowear resistance. Nanoindentation hardness was positively correlated with the Raman peak ratio Id/Ig, whereas wear depth was negatively correlated with this ratio. These nanotribological properties highly depend on the films’ nanostructures. The tribological properties of the FCVA-DLC films were also investigated using a ball-on-disk test. The average friction coefficient of DLC films deposited with DC bias voltage was lower than that of DLC films deposited with pulse bias voltage. The friction coefficient calculated from the ball-on-disk test was correlated with the nanoindentation hardness in dry conditions. However, under boundary lubrication conditions, the friction coefficient and specific wear rate had little correlation with nanoindentation hardness, and wear behavior seemed to be influenced by other factors such as adhesion strength between the film and substrate.

  5. Influence Voltage Pulse Electrical Discharge In The Water at the Endurance Fatigue Of Carbon Steel

    Directory of Open Access Journals (Sweden)

    I.A. Vakulenko

    2016-05-01

    Full Text Available Effect of pulses of electrical discharge in the water at the magnitude of the limited endurance under cyclic loading thermally hardened carbon steel was investigated. Observed increase stamina during cyclic loading a corresponding increase in the number of accumulated dislocations on the fracture surface. Using the equation of Cofino-Manson has revealed a decrease of strain loading cycle after treatment discharges. For field-cycle fatigue as a result of processing the voltage pulses carbon steel structure improvement, followed by growth of limited endurance decrease per cycle of deformation. With increasing amplitude of the voltage loop gain stamina effect on metal processing voltage pulses is reduced. The results can be used to extend the life of parts that are subject to cyclic loading.

  6. Solid-state fast voltage compensator for pulsed power applications requiring constant AC power consumption

    CERN Document Server

    Magallanes, Francisco Cabaleiro; Viarouge, Philippe; Cros, Jérôme

    2015-01-01

    This paper proposes a novel topological solution for pulsed power converters based on capacitor-discharge topologies, integrating a Fast Voltage Compensator which allows an operation at constant power consumption from the utility grid. This solution has been retained as a possible candidate for the CLIC project under study at CERN, which requires more than a thousand synchronously-operated klystron modulators producing a total pulsed power of almost 40 GW. The proposed Fast Voltage Compensator is integrated in the modulator such that it only has to treat the capacitor charger current and a fraction of the charging voltage, meaning that its dimensioning power and cost are minimized. This topology can be used to improve the AC power quality of any pulsed converters based on capacitor-discharge concept. A prototype has been built and exploited to validate the operating principle and demonstrate the benefits of the proposed solution.

  7. Study on the construction and its operating characteristics of Marx high voltage pulse generator

    International Nuclear Information System (INIS)

    Chung, W.K.; Yook, C.C.

    1984-01-01

    This study is to investigate the operating characteristics of a Marx high voltage pulse generator, which is designed and fabricated for the purpose of constructing a linear theta-pinch plasma generating facility. The Marx generator consists of a 2 kJ capacitor bank of maximum output voltage of 200kV, a set of main spark switch, a triggring system, and high voltage charging power supply. The experimental results show that the operating characteristics of the generator can be controlled through varying nitrogen pressure as a filling gas. The output pulse of the generator is achieved close to the estimated voltage with the rise time of 3*m seconds. The stability of the generator is also very satisfactory within operating range of main spark switch. (Author)

  8. Pulsed high voltage electric discharge disinfection of microbially contaminated liquids.

    Science.gov (United States)

    Anpilov, A M; Barkhudarov, E M; Christofi, N; Kop'ev, V A; Kossyi, I A; Taktakishvili, M I; Zadiraka, Y

    2002-01-01

    To examine the use of a novel multielectrode slipping surface discharge (SSD) treatment system, capable of pulsed plasma discharge directly in water, in killing micro-organisms. Potable water containing Escherichia coli and somatic coliphages was treated with pulsed electric discharges generated by the SSD. The SSD system was highly efficient in the microbial disinfection of water with a low energy utilization (eta approximately 10-4 kW h l-1). The SSD treatment was effective in the destruction of E. coli and its coliphages through the generation of u.v. radiation, ozone and free radicals. The non-thermal treatment method can be used for the eradication of micro-organisms in a range of contaminated liquids, including milk, negating the use of pasteurization. The method utilizes multipoint electric discharges capable of treating large volumes of liquid under static and flowing regimes.

  9. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  10. Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

    International Nuclear Information System (INIS)

    Zhang Yong; Yang Jianhong; Cai Xueyuan; Wang Zaixing

    2010-01-01

    The exponential dependence of the potential barrier height φ c on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of φ c on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of φ c can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics. (semiconductor devices)

  11. High-voltage transistor converter for pulsed x-ray sources

    International Nuclear Information System (INIS)

    Krasil'nikov, S.B.; Kristalinskii, A.L.; Lozovoi, L.N.; Markov, S.N.; Sindalovskii, E.I.

    1986-01-01

    A 24-V/12-kV converter for MIRA-2D and NORA pulsed x-ray sources is described. When the low-voltage supply varies within 20-26 V, the frequency stability of the x-ray pulses is higher by a factor of 3 ≅ 3 than when the PRIMA converter is used. For 14-24 V, the average output power of the converter is independent of the load impedance and increases linearly with an increase in supply voltage. The efficiency of the converter reaches 60%. The converter operates in the temperature range of -40 to +60 0 C

  12. Hybrid Design Optimization of High Voltage Pulse Transformers for Klystron Modulators

    CERN Document Server

    Sylvain, Candolfi; Davide, Aguglia; Jerome, Cros

    2015-01-01

    This paper presents a hybrid optimization methodology for the design of high voltage pulse transformers used in klystron modulators. The optimization process is using simplified 2D FEA design models of the 3D transformer structure. Each intermediate optimal solution is evaluated by 3D FEA and correction coefficients of the 2D FEA models are derived. A new optimization process using 2D FEA models is then performed. The convergence of this hybrid optimal design methodology is obtained with a limited number of time consuming 3D FEA simulations. The method is applied to the optimal design of a monolithic high voltage pulse transformer for the CLIC klystron modulator.

  13. Transient voltage response of a superconducting strip to a supercritical current pulse

    International Nuclear Information System (INIS)

    Attekum, P.M.Th.M. van; Wouters, M.C.H.M.; Wolter, J.; Horstman, R.E.

    1981-01-01

    A superconductor subject to a supercritical current pulse displays a delay time between the onset of the current pulse and the onset of the corresponding voltage response. From the onset of the voltage response it takes a second (transient) time to reach the stationary state. It is shown that the transient time can be explained with inhomogeneities in the strip which give rise to a distribution of delay times. The transient time is thus not related to a characteristic time in the superconductor. For small supercritical currents also heating effects show up. (author)

  14. A New Resonant Capacitor Diode Voltage Multiplier Topology for Pulsed Power Application

    Directory of Open Access Journals (Sweden)

    Mohammad Kebriaei

    2017-09-01

    Full Text Available Today, the pulsed power systems have been employed in many applications. To meet the requirement of user, the pulse generator should enjoy the advantages of compactness, high flexibility, high pulse repetition rate and cost efficiency. Among all of converters that can be used to generate high voltage pulses, capacitance diode voltage multiplier (CDVM is a good candidate to meet the mentioned requirements. In this paper a new converter that is combination of full-bridge inverter, CDVM and resonant circuit is proposed. The performance of developed converter is compared with the conventional circuits and is demonstrated via simulation in MATLAB/SIMULINK. Experimental tests on a prototype setup have verified the capability of this topology.

  15. MOSFET-based high voltage double square-wave pulse generator with an inductive adder configuration

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xin [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Zhang, Qiaogen, E-mail: hvzhang@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Long, Jinghua [College of Physics, Shenzhen University, Shenzhen 518060 (China); Lei, Yunfei; Liu, Jinyuan [Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China)

    2015-09-01

    This paper presents a fast MOSFET-based solid-state pulse generator for high voltage double square-wave pulses. The generator consists mainly of an inductive adder system stacked of 20 solid-state modules. Each of the modules has 18 power MOSFETs in parallel, which are triggered by individual drive circuits; these drive circuits themselves are synchronously triggered by a signal from avalanche transistors. Our experiments demonstrate that the output pulses with amplitude of 8.1 kV and peak current of about 405 A are available at a load impedance of 20 Ω. The pulse has a double square-wave form with a rise and fall time of 40 ns and 26 ns, respectively and bottom flatness better than 12%. The interval time of the double square-wave pulses can be adjustable by varying the interval time of the trigger pulses.

  16. Synthesis of ultrawideband radiation of combined antenna arrays excited by nanosecond bipolar voltage pulses

    International Nuclear Information System (INIS)

    Koshelev, V I; Plisko, V V; Sevostyanov, E A

    2017-01-01

    To broaden the spectrum of high-power ultrawideband radiation, it is suggested to synthesize an electromagnetic pulse summing the pulses of different length in free space. On the example of model pulses corresponding to radiation of combined antennas excited by bipolar voltage pulses of the length of 2 and 3 ns, the possibility of twofold broadening of the radiation spectrum was demonstrated. Radiation pulses with the spectrum width exceeding three octaves were obtained. Pattern formation by the arrays of different geometry excited by the pulses having different time shifts was considered. Optimum array structure with the pattern maximum in the main direction was demonstrated on the example of a 2×2 array. (paper)

  17. The energy spectrum of the 'runaway' electrons from a high voltage pulsed discharge

    International Nuclear Information System (INIS)

    Ruset, C.

    1985-01-01

    Some experimental results are presented on the influence of the pressure upon the energy spectrum of the runaway electrons generated into a pulsed high voltage argon discharge. These electrons enter a state of continuous acceleration between two collisions with rapidly increasing free path. The applied discharge current varies from 10 to 300 A, the pulse time is about 800 ns. Relativistic effects are taken into consideration. Theoretical explanation is based on the pnenomenon of electron spreading on plasma oscillations. (D.Gy.)

  18. Influence Voltage Pulse Electrical Discharge In The Water at the Endurance Fatigue Of Carbon Steel

    OpenAIRE

    I.A. Vakulenko; A.G. Lisnyak

    2016-01-01

    Effect of pulses of electrical discharge in the water at the magnitude of the limited endurance under cyclic loading thermally hardened carbon steel was investigated. Observed increase stamina during cyclic loading a corresponding increase in the number of accumulated dislocations on the fracture surface. Using the equation of Cofino-Manson has revealed a decrease of strain loading cycle after treatment discharges. For field-cycle fatigue as a result of processing the voltage pulses carbon st...

  19. Optimized Controller Design for a 12-Pulse Voltage Source Converter Based HVDC System

    Science.gov (United States)

    Agarwal, Ruchi; Singh, Sanjeev

    2017-12-01

    The paper proposes an optimized controller design scheme for power quality improvement in 12-pulse voltage source converter based high voltage direct current system. The proposed scheme is hybrid combination of golden section search and successive linear search method. The paper aims at reduction of current sensor and optimization of controller. The voltage and current controller parameters are selected for optimization due to its impact on power quality. The proposed algorithm for controller optimizes the objective function which is composed of current harmonic distortion, power factor, and DC voltage ripples. The detailed designs and modeling of the complete system are discussed and its simulation is carried out in MATLAB-Simulink environment. The obtained results are presented to demonstrate the effectiveness of the proposed scheme under different transient conditions such as load perturbation, non-linear load condition, voltage sag condition, and tapped load fault under one phase open condition at both points-of-common coupling.

  20. High-voltage many-pulses generator with inductive energy store and fuse

    International Nuclear Information System (INIS)

    Kovalev, V.P.; Diyankov, V.S.; Kormilitsin, A.I.; Lavrent'ev, B.N.

    1996-01-01

    The high-voltage generator with inductive energy store and fuses as opening switch that generate series of powerful pulses is considered. This generator differs from the ordinary generator with inductive store by the cross-section of the series copper wires. The parameters of the wires are chosen based on empirical relations. The generation principle was tested on the two high-voltage generators with characteristic impedance 2.2 ohm, 4 ohm and with output voltages of 140 kV and 420 kV, respectively. Copper wires 0.1 to 0.23 mm in diameter were used. Series of 2 to 5 pulses of 100 to 300 ns duration, 400 to 1000 kV amplitude and 1 - 10 GW power were obtained. Pulses can be both the same and different. Two successive bremsstrahlung radiation pulses were obtain on the EMIR-M and IGUR-3 devices. Series power megavolt pulses can be generated with a power exceeding 10 11 W, pulse duration of 10 -3 to 10 -6 s, and time interval between them 10 -7 to 10 -5 s. (author). 4 figs., 2 refs

  1. High-voltage many-pulses generator with inductive energy store and fuse

    Energy Technology Data Exchange (ETDEWEB)

    Kovalev, V P; Diyankov, V S; Kormilitsin, A I; Lavrent` ev, B N [All-Russian Research Inst. of Technical Physics, Snezhinsk (Russian Federation)

    1997-12-31

    The high-voltage generator with inductive energy store and fuses as opening switch that generate series of powerful pulses is considered. This generator differs from the ordinary generator with inductive store by the cross-section of the series copper wires. The parameters of the wires are chosen based on empirical relations. The generation principle was tested on the two high-voltage generators with characteristic impedance 2.2 ohm, 4 ohm and with output voltages of 140 kV and 420 kV, respectively. Copper wires 0.1 to 0.23 mm in diameter were used. Series of 2 to 5 pulses of 100 to 300 ns duration, 400 to 1000 kV amplitude and 1 - 10 GW power were obtained. Pulses can be both the same and different. Two successive bremsstrahlung radiation pulses were obtain on the EMIR-M and IGUR-3 devices. Series power megavolt pulses can be generated with a power exceeding 10{sup 11} W, pulse duration of 10{sup -3} to 10{sup -6} s, and time interval between them 10{sup -7} to 10{sup -5} s. (author). 4 figs., 2 refs.

  2. Experimental investigations of argon spark gap recovery times by developing a high voltage double pulse generator.

    Science.gov (United States)

    Reddy, C S; Patel, A S; Naresh, P; Sharma, Archana; Mittal, K C

    2014-06-01

    The voltage recovery in a spark gap for repetitive switching has been a long research interest. A two-pulse technique is used to determine the voltage recovery times of gas spark gap switch with argon gas. First pulse is applied to the spark gap to over-volt the gap and initiate the breakdown and second pulse is used to determine the recovery voltage of the gap. A pulse transformer based double pulse generator capable of generating 40 kV peak pulses with rise time of 300 ns and 1.5 μs FWHM and with a delay of 10 μs-1 s was developed. A matrix transformer topology is used to get fast rise times by reducing L(l)C(d) product in the circuit. Recovery Experiments have been conducted for 2 mm, 3 mm, and 4 mm gap length with 0-2 bars pressure for argon gas. Electrodes of a sparkgap chamber are of rogowsky profile type, made up of stainless steel material, and thickness of 15 mm are used in the recovery study. The variation in the distance and pressure effects the recovery rate of the spark gap. An intermediate plateu is observed in the spark gap recovery curves. Recovery time decreases with increase in pressure and shorter gaps in length are recovering faster than longer gaps.

  3. Multipacting in a coaxial coupler with bias voltage for SRF operation with a large beam current

    Science.gov (United States)

    Liu, Z.-K.; Wang, Ch.; Chang, F.-Y.; Chang, L.-H.; Chang, M.-H.; Chen, L.-J.; Chung, F.-T.; Lin, M.-C.; Lo, C.-H.; Tsai, C.-L.; Tsai, M.-H.; Yeh, M.-S.; Yu, T.-C.

    2016-09-01

    A superconducting radio-frequency (SRF) module is commonly used for a high-energy accelerator; its purpose is to provide energy to the particle beam. Because of the low power dissipation and smaller impedance of a higher-order mode for this module, it can provide more power to the particle beam with better stability through decreasing the couple bunch instability. A RF coupler is necessary to transfer the high power from a RF generator to the cavity. A coupler of coaxial type is a common choice. With high-power operation, it might suffer from multipacting, which is a resonance phenomenon due to re-emission of secondary electrons. Applying a bias voltage between inner and outer conductors of the coaxial coupler might increase or decrease the strength of the multipacting effect. We studied the effect of a bias voltage on multipacting using numerical simulation to track the motion of the electrons. The simulation results and an application for SRF operation with a large beam current are presented in this paper.

  4. Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

    Science.gov (United States)

    Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

    2017-04-04

    A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input

  5. A Numerical Simulation Of The Pulse Sequence Reconstruction in AC Biased TESs With a β Source

    International Nuclear Information System (INIS)

    Ferrari, Lorenza; Vaccarone, Renzo

    2009-01-01

    We study the response of micro-calorimeters based on Ir/Au TESs biased by an AC voltage in the MHz range to the power input generated by beta emission in a Re source thermally connected to the calorimeter itself. The micro-calorimeter is assumed to work at -80 mK, and the energy pulses corresponding to the beta emission have an energy distributed between zero and 2.58 KeV. In this numerical simulation the TES is inserted in a RLC resonating circuit, with a low quality factor. The thermal conductivities between the source and the calorimeter and that from the calorimeter to the heat sink are non-linear. The superconducting to normal transition of the TES is described by a realistic non-linear model. The AC current at the carrier frequency, modulated by the changing resistance of the TES, is demodulated and the output is filtered. The resulting signal is analyzed to deduce the attainable time resolution and the linearity of the response.

  6. Experimental research for vacuum gap breakdown in high voltage multi-pulse

    International Nuclear Information System (INIS)

    Huang Ziping; He Jialong; Chen Sifu; Deng Jianjun; Wang Liping

    2008-01-01

    Base on the breakdown theory of vacuum gaps, experiments have been done to find out the breakdown electric field intensities in high voltage single-and triple-pulse for 26 vacuum gaps with different shapes. The experimental results match up to the theory and confirm the effect of the pulse-number increase on the breakdown electric field intensity. The key point to decide the macroscopical breakdown electric field intensity of a vacuum gap has been pointed out with some advises about the design of a multi-pulse linear inductive accelerator's accelerate gap. (authors)

  7. New schemes for high-voltage pulsed generators based on stepped transmission lines

    International Nuclear Information System (INIS)

    Bossamykin, V.S.; Gordeev, V.S.; Pavlovskii, A.I.

    1993-01-01

    Wave processes were analyzed from the point of effective energy delivery in pulsed power systems based on transmission lines. A series of new schemes for the pulsed generators based on multistage stepped transmission lines both with the capacitive and inductive energy storage was found. These devices can provide voltage or current transformation up to 5-10 times due to wave processes if stage's characteristic impedances are in a certain correlation. The schemes suggested can be widely applied in the new powerful pulsed power accelerators. The theoretical conclusions are justified experimentally

  8. Development of a fast rise-time, high-voltage pulse generator

    International Nuclear Information System (INIS)

    Zhang Yanxia; Zhu Jie; Li Xianyou

    2006-01-01

    In order to test the attenuation of the system, a fast rise-time, high-voltage pulse generator is required for the fast pulse signal measurement. The paper presents the development of the generator. More emphasis is paid on the discussion of the difficulties occurring in the circuit debugging and their resolutions. The output rise-time of the generator is 700 ps, the amplitude is adjustable in the range of 0 to 500 V, the pulse-width is adjustable in the range of 4ns to 1μs. (authors)

  9. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

    International Nuclear Information System (INIS)

    Lytvynenko, Ia.M.; Hauet, T.; Montaigne, F.; Bibyk, V.V.; Andrieu, S.

    2015-01-01

    Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height

  10. Alarm radiation dosimeter with improved integrating pulse ionization chamber and high voltage supply

    International Nuclear Information System (INIS)

    Borkowski, C.J.; Rochelle, J.M.

    1975-01-01

    An alarm dosimeter is described which features an improved integrating pulse ionization chamber of the type containing an hermetically sealed gas diode. Improved operation and miniaturization of the chamber are made possible by a ringing choke converter high voltage supply having a ripple-type output that insures discharge of the gas diode. (author)

  11. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Science.gov (United States)

    Williamson, James M.; Trump, Darryl D.; Bletzinger, Peter; Ganguly, Biswa N.

    2006-10-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s-1. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ~3 × 1015 cm-3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ~8.5 × 1015 cm-3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  12. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, James M [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Trump, Darryl D [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Bletzinger, Peter [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Ganguly, Biswa N [Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7919 (United States)

    2006-10-21

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s{sup -1}. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of {approx}3 x 10{sup 15} cm{sup -3} at 25 W. The maximum ozone production achieved by short-pulse excitation was {approx}8.5 x 10{sup 15} cm{sup -3} at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  13. Development of a compact generator for gigawatt, nanosecond high-voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Lin, E-mail: zhoulin-2003@163.com; Jiang, Zhanxing; Liang, Chuan; Li, Mingjia; Wang, Wenchuan; Li, Zhenghong [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-226, Mianyang 621999 (China)

    2016-03-15

    A compact generator producing 2.2-ns 1.5 GW high-voltage pulses was developed. The generator employed a 27.6 Ω, 0.9 ns pulse-forming-line (PFL), which was charged by an iron core transformer with a turn ratio of 2:33.5 and a coefficient of 0.94. A 1.2 μF, 20 kV capacitor and a hydrogen thyratron were used in the primary circuit. When the thyratron closed at 14.5 kV, 3.4% of the energy stored in the capacitor was delivered to the PFL in 850 ns, producing a peak voltage of up to ∼500 kV. In addition, the principle of triple resonance transformation was employed by adding a 50 pF tuning capacitor and a 1.15 mH inductor between the transformer and the PFL, which led to a significant reduction of the duration and peak value of the transformer voltage without reducing that in the PFL. Meanwhile, an adjustable self-break oil switch was applied. By using transmission lines with impedance overmatched to that of the PFL, the generator delivered a 512 kV pulse across an electron beam diode, generating radiation with a dose of 20 mR/pulse at 20 cm ahead of the diode. The generator provides an excellent ultra-short radiation pulse source for the studies on radiation physics.

  14. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    International Nuclear Information System (INIS)

    Williamson, James M; Trump, Darryl D; Bletzinger, Peter; Ganguly, Biswa N

    2006-01-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s -1 . The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ∼3 x 10 15 cm -3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ∼8.5 x 10 15 cm -3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level

  15. Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

    Science.gov (United States)

    Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

    2017-10-01

    A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

  16. ELABORATION OF HIGH-VOLTAGE PULSE INSTALLATIONS AND PROVIDING THEIR OPERATION PROTECTIVE MEASURES

    Directory of Open Access Journals (Sweden)

    А. М. Hashimov

    2016-01-01

    Full Text Available The article presents design engineering methods for the high-voltage pulse installations of technological purpose for disinfection of drinking water, sewage, and edible liquids by high field micro- and nanosecond pulsing exposure. Designing potentialities are considered of the principal elements of the high-voltage part and the discharge circuit of the installations towards assuring the best efficient on-load utilization of the source energy and safe operation of the high-voltage equipment. The study shows that for disinfection of drinking water and sewage it is expedient to apply microsecond pulse actions causing the electrohydraulic effect in aqueous media with associated complex of physical processes (ultraviolet emission, generation of ozone and atomic oxygen, mechanical compression waves, etc. having detrimental effect on life activity of the microorganisms. In case of disinfecting edible liquids it is recommended to use the nanosecond pulses capable of straight permeating the biological cell nucleus, inactivating it. Meanwhile, the nutritive and biological values of the foodstuffs are saved and their organoleptic properties are improved. It is noted that in elaboration process of high-frequency pulse installations special consideration should be given to issues of the operating personnel safety discipline and securing conditions for the entire installation uninterrupted performance. With this objective in view the necessary requirements should be fulfilled on shielding the high- and low-voltage installation parts against high-frequency electromagnetic emissions registered by special differential sensors. Simultaneously, the abatement measures should be applied on the high-voltage equipment operational noise level. The authors offer a technique for noise abatement to admissible levels (lower than 80 dB A by means of coating the inside surface with shielded enclosure of densely-packed abutting sheets of porous electro-acoustic insulating

  17. Design and development of high voltage MARX modulator technology for long pulse application

    International Nuclear Information System (INIS)

    Acharya, Mahesh; Shrivastava, Purushottam

    2013-01-01

    High power pulse modulators are used for powering the RF amplifier like klystrons. This paper describes the development of a 10 kV, 10 A, 1 ms Marx modulator for technology demonstration. The modulator is developed using four no. of main modules each of 2.5 kV. To reduce the over sizing factor of capacitors, the allowed drop of main Marx cell is 9%. A droop compensation circuit has been developed to reduce the output pulse voltage droop from 9% to within ±1%. Droop compensation consists of 10 numbers of corrector modules each of 200 V. A microcontroller based trigger circuit was used for simultaneous triggering of main modules and for staggered triggering of corrector modules. A 25 kV, 10 A, 1 ms Marx modulator is being developed. The advantages of this scheme are oil free design, low DC voltage, adjustable pulse width, adjustable rise time/fall time and modular design etc. (author)

  18. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  19. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  20. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  1. Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

    International Nuclear Information System (INIS)

    Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

    1985-05-01

    When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

  2. Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

    Directory of Open Access Journals (Sweden)

    Chip-Hong Chang

    2016-08-01

    Full Text Available Static Random Access Memory (SRAM has recently been developed into a physical unclonable function (PUF for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF is that while maximizing the mismatches between the transistors in the cross-coupled inverters improves the quality of the SPUF, this ironically also gives rise to increased memory read/write failures. For this reason, the memory cells of existing SPUFs cannot be reused as storage elements, which increases the overheads of cryptographic system where long signatures and high-density storage are both required. This paper presents a novel design methodology for dual-mode SRAM cell optimization. The design conflicts are resolved by using word-line voltage modulation, dynamic voltage scaling, negative bit-line and adaptive body bias techniques to compensate for reliability degradation due to transistor downsizing. The augmented circuit-level techniques expand the design space to achieve a good solution to fulfill several otherwise contradicting key design qualities for both modes of operation, as evinced by our statistical analysis and simulation results based on complementary metal–oxide–semiconductor (CMOS 45 nm bulk Predictive Technology Model.

  3. High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

    Science.gov (United States)

    Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

    2010-10-01

    White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

  4. Correction of high-voltage pulse front by means of exploding wires

    International Nuclear Information System (INIS)

    Azarkevich, E.I.; Zajtsev, N.I.; Kotov, Yu.A.

    1979-01-01

    A method of correcting the poWer pulse fronts shaped during the discharge of the Akradiev-Marx generator on active load has been suggested with a view to shaping power high-voltage pulses on the diode of a high-current electron accelerator. Thish correction is carried oUt by means of the current breaker on the base of electrically exploding wires. The breaker consists of four copper wires of 0.12 mm diameter, and 940 mm length. A current pulse of 32 kA amplitude, duration of 2.7 μs with a front of 100 ns was obtained by the use of the current breaker when forming the pulse in the electron accelerator power supply at load of 12 Ohm. The correction resulted in a nearly 20-fold reduction of the front duration

  5. The Preceding Voltage Pulse and Separation Welding Mechanism of Electrical Contacts

    DEFF Research Database (Denmark)

    Yang, Xiao Cheng; Huang, Jiang; Li, Zhen Biao

    2016-01-01

    In order to obtain a better understanding of the welding mechanism in contact separation, electrical endurance tests were conducted with AgSnO2 and AgNi contacts on a simulation test device. Waveforms of contact displacement, contact voltage, and current were recorded with LabVIEW during the tests......, and changes in a contact gap and heights of pips with increases in operation cycles were observed through charge-coupled device cameras. The resultant test results show that welding in separation is accompanied with a preceding voltage pulse which represents arc rather than contact bounce arc....

  6. Pulsed Operation of a Compact Fusion Neutron Source Using a High-Voltage Pulse Generator Developed for Landmine Detection

    International Nuclear Information System (INIS)

    Yamauchi, Kunihito; Watanabe, Masato; Okino, Akitoshi; Kohno, Toshiyuki; Hotta, Eiki; Yuura, Morimasa

    2005-01-01

    Preliminary experimental results of pulsed neutron source based on a discharge-type beam fusion called Inertial Electrostatic Confinement Fusion (IECF) for landmine detection are presented. In Japan, a research and development project for constructing an advanced anti-personnel landmine detection system by using IECF, which is effective not only for metal landmines but also for plastic ones, is now in progress. This project consists of some R and D topics, and one of them is R and D of a high-voltage pulse generator system specialized for landmine detection, which can be used in the severe environment such as that in the field in Afghanistan. Thus a prototype of the system for landmine detection was designed and fabricated in consideration of compactness, lightness, cooling performance, dustproof and robustness. By using this prototype pulse generator system, a conventional IECF device was operated as a preliminary experiment. As a result, it was confirmed that the suggested pulse generator system is suitable for landmine detection system, and the results follow the empirical law obtained by the previous experiments. The maximum neutron production rate of 2.0x10 8 n/s was obtained at a pulsed discharge of -51 kV, 7.3 A

  7. Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

    Science.gov (United States)

    Ho, Teck Seng; Charles, Christine; Boswell, Rod

    2018-05-01

    In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

  8. Effects of detector-source distance and detector bias voltage variations on time resolution of general purpose plastic scintillation detectors.

    Science.gov (United States)

    Ermis, E E; Celiktas, C

    2012-12-01

    Effects of source-detector distance and the detector bias voltage variations on time resolution of a general purpose plastic scintillation detector such as BC400 were investigated. (133)Ba and (207)Bi calibration sources with and without collimator were used in the present work. Optimum source-detector distance and bias voltage values were determined for the best time resolution by using leading edge timing method. Effect of the collimator usage on time resolution was also investigated. Copyright © 2012 Elsevier Ltd. All rights reserved.

  9. Irreversible electroporation ablation area enhanced by synergistic high- and low-voltage pulses.

    Directory of Open Access Journals (Sweden)

    Chenguo Yao

    Full Text Available Irreversible electroporation (IRE produced by a pulsed electric field can ablate tissue. In this study, we achieved an enhancement in ablation area by using a combination of short high-voltage pulses (HVPs to create a large electroporated area and long low-voltage pulses (LVPs to ablate the electroporated area. The experiments were conducted in potato tuber slices. Slices were ablated with an array of four pairs of parallel steel electrodes using one of the following four electric pulse protocols: HVP, LVP, synergistic HVP+LVP (SHLVP or LVP+HVP. Our results showed that the SHLVPs more effectively necrotized tissue than either the HVPs or LVPs, even when the SHLVP dose was the same as or lower than the HVP or LVP doses. The HVP and LVP order mattered and only HVPs+LVPs (SHLVPs treatments increased the size of the ablation zone because the HVPs created a large electroporated area that was more susceptible to the subsequent LVPs. Real-time temperature change monitoring confirmed that the tissue was non-thermally ablated by the electric pulses. Theoretical calculations of the synergistic effects of the SHLVPs on tissue ablation were performed. Our proposed SHLVP protocol provides options for tissue ablation and may be applied to optimize the current clinical IRE protocols.

  10. Irreversible electroporation ablation area enhanced by synergistic high- and low-voltage pulses.

    Science.gov (United States)

    Yao, Chenguo; Lv, Yanpeng; Dong, Shoulong; Zhao, Yajun; Liu, Hongmei

    2017-01-01

    Irreversible electroporation (IRE) produced by a pulsed electric field can ablate tissue. In this study, we achieved an enhancement in ablation area by using a combination of short high-voltage pulses (HVPs) to create a large electroporated area and long low-voltage pulses (LVPs) to ablate the electroporated area. The experiments were conducted in potato tuber slices. Slices were ablated with an array of four pairs of parallel steel electrodes using one of the following four electric pulse protocols: HVP, LVP, synergistic HVP+LVP (SHLVP) or LVP+HVP. Our results showed that the SHLVPs more effectively necrotized tissue than either the HVPs or LVPs, even when the SHLVP dose was the same as or lower than the HVP or LVP doses. The HVP and LVP order mattered and only HVPs+LVPs (SHLVPs) treatments increased the size of the ablation zone because the HVPs created a large electroporated area that was more susceptible to the subsequent LVPs. Real-time temperature change monitoring confirmed that the tissue was non-thermally ablated by the electric pulses. Theoretical calculations of the synergistic effects of the SHLVPs on tissue ablation were performed. Our proposed SHLVP protocol provides options for tissue ablation and may be applied to optimize the current clinical IRE protocols.

  11. Control of Reactive Species Generated by Low-frequency Biased Nanosecond Pulse Discharge in Atmospheric Pressure Plasma Effluent

    Science.gov (United States)

    Takashima, Keisuke; Kaneko, Toshiro

    2016-09-01

    The control of hydroxyl radical and the other gas phase species generation in the ejected gas through air plasma (air plasma effluent) has been experimentally studied, which is a key to extend the range of plasma treatment. Nanosecond pulse discharge is known to produce high reduced electric field (E/N) discharge that leads to efficient generation of the reactive species than conventional low frequency discharge, while the charge-voltage cycle in the low frequency discharge is known to be well-controlled. In this study, the nanosecond pulse discharge biased with AC low frequency high voltage is used to take advantages of these discharges, which allows us to modulate the reactive species composition in the air plasma effluent. The utilization of the gas-liquid interface and the liquid phase chemical reactions between the modulated long-lived reactive species delivered from the air plasma effluent could realize efficient liquid phase chemical reactions leading to short-lived reactive species production far from the air plasma, which is crucial for some plasma agricultural applications.

  12. Effect of pulsed voltage on electrochemical migration of tin in electronics

    DEFF Research Database (Denmark)

    Verdingovas, Vadimas; Jellesen, Morten Stendahl; Ambat, Rajan

    2015-01-01

    formation and increases the charge transferred between the electrodes over time. With increase of duty cycle, increases the anodic dissolution of tin, which was visualized using a tin ion indicator applied on the components prior to applying the voltage. The anodic dissolution of tin significantly...... respectively at 10 and 5 V, while the duty cycle and the pulse width were varied in the range of ms. The results showed that varying of pulse width at fixed duty cycle has a minor effect under investigated conditions, whereas increasing duty cycle significantly reduces the time to short due to dendrite...

  13. Repetitive plasma opening switch for powerful high-voltage pulse generators

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Zakatov, L.P.; Nitishinskii, M.S.; Ushakov, A.G.

    1998-01-01

    Results are presented of experimental studies of plasma opening switches that serve to sharpen the pulses of inductive microsecond high-voltage pulse generators. It is demonstrated that repetitive plasma opening switches can be used to create super-powerful generators operating in a quasi-continuous regime. An erosion switching mechanism and the problem of magnetic insulation in repetitive switches are considered. Achieving super-high peak power in plasma switches makes it possible to develop new types of high-power generators of electron beams and X radiation. Possible implementations and the efficiency of these generators are discussed

  14. PIEZOELECTRIC WAVEGUIDE SENSOR FOR MEASURING PULSE PRESSURE IN CLOSED LIQUID VOLUMES AT HIGH VOLTAGE ELECTRIC DISCHARGE

    Directory of Open Access Journals (Sweden)

    V. G. Zhekul

    2017-10-01

    Full Text Available Purpose. Investigations of the characteristics of pressure waves presuppose the registration of the total profile of the pressure wave at a given point in space. For these purposes, various types of «pressure to the electrical signal» transmitters (sensors are used. Most of the common sensors are unsuitable for measuring the pulse pressure in a closed water volume at high hydrostatic pressures, in particular to study the effect of a powerful high-voltage pulse discharge on increasing the inflow of minerals and drinking water in wells. The purpose of the work was to develop antijamming piezoelectric waveguide sensor for measuring pulse pressure at a close distance from a high-voltage discharge channel in a closed volume of a liquid. Methodology. We have applied the calibration method as used as a secondary standard, the theory of electrical circuits. Results. We have selected the design and the circuit solution of the waveguide pressure sensor. We have developed a waveguide pulse-pressure sensor DTX-1 with a measuring loop. This sensor makes it possible to study the spectral characteristics of pressure waves of high-voltage pulse discharge in closed volumes of liquid at a hydrostatic pressure of up to 20 MPa and a temperature of up to 80 °C. The sensor can be used to study pressure waves with a maximum amplitude value of up to 150 MPa and duration of up to 80 µs. According to the results of the calibration, the sensitivity of the developed sensor DTX-1 with a measuring loop is 0.0346 V/MPa. Originality. We have further developed the theory of designing the waveguide piezoelectric pulse pressure sensors for measuring the pulse pressure at a close distance from a high-voltage discharge channel in a closed fluid volume by controlling the attenuation of the amplitude of the pressure signal. Practical value. We have developed, created, calibrated, used in scientific research waveguide pressure pulse sensors DTX-1. We propose sensors DTX-1 for sale

  15. Effect of applied voltage and inter-pulse delay in spark-assisted LIBS

    Science.gov (United States)

    Robledo-Martinez, A.; Sobral, H.; Garcia-Villarreal, A.

    2018-06-01

    We report the results obtained in an investigation on the effect of the time delay between the laser and electrical pulses in a spark-assisted laser-induced breakdown spectroscopy (LIBS) experiment. The electrical discharge is produced by the discharge of a charged coaxial cable. This arrangement produces a fast unipolar current pulse (500 ns) that applies high power ( 600 kW) to the laser ablation plasma. The delay between the laser pulse and the electric pulse can be controlled at will in order to find the optimal time in terms of enhancement of the emitted lines. It was found that the application of the high voltage pulse enhances the ionic lines emitted by up to two orders of magnitude. An additional enhancement by a factor of 2-4 can be obtained delaying the application of the electric pulse by a time of 0.6-20 μs. In the tests it was noticed that the ionic lines were found to be clearly responsive to increments in the applied electric energy while the neutral lines did so marginally. Our results show that the intensification of the lines is mainly due to reheating of the ablation plasma as the application of the electrical pulse increments the temperature of the ablation plasma by about 50%. It is demonstrated that the present technique is an efficient way of intensifying the lines emitted without incurring in additional damage to the sample.

  16. The Design of Nanosecond Fast-switch Pulsed High Voltage Power Supply Based on Solid-state

    International Nuclear Information System (INIS)

    Chen Wenguang; Chen Wei; Rao Yihua

    2009-01-01

    The high voltage pulsed power supply is applied in the experiment of the nuclear science widely. It main consist of DC high-voltage power supply (HVPS) and pulse modulator. The high-frequency series-resonant inverter technology and IGBT series technology are used to design the HVPS and the modulator, respectively. The main circuit, control circuit, high voltage transformer and solid-state switch are illuminated in the paper. The apparatus can operate at a maximum output voltage of 6 kilovolt, which can be modulated single pulse and also be modulated by series pulse. A prototype is fabricated and tested, experimental results show that the pulsed power supply is well-designed and rising edge time to meet the nsclass; it can achieve the requirement of rapid modulation. (authors)

  17. The effect of high voltage pulsed electric field on water molecular

    Science.gov (United States)

    Fan, Xuejie; Bai, Yaxiang; Ren, Ziying

    2017-10-01

    In order to study the mechanism of high voltage pulsed electric field pre-treatment on the food drying technology. In this paper, water was treated with high pulse electric field (HPEF) in different frequency, and different voltage, then, the viscosity coefficient and the surface tension coefficient of the water were measured. The results showed that indicated that the viscosity coefficient and the surface tension coefficient of the treated water can be decreased, and while HPEF pre-treatment was applied for 22.5kV at a frequency of 50Hz and 70 Hz, the surface tension and the viscosity coefficient of the pre-treatment treatment were reduced 13.1% and 7.5%, respectively.

  18. Rise time of voltage pulses in NbN superconducting single photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, K. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics, 34 Tallinskaya St., 109028 Moscow (Russian Federation); Divochiy, A. V.; Karpova, U. V.; Morozov, P. V. [CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Vakhtomin, Yu. B.; Seleznev, V. A. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Sidorova, M. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); Zotova, A. N.; Vodolazov, D. Yu. [Institute for Physics of Microstructure, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, 603950 Nizhny Novgorod (Russian Federation)

    2016-08-01

    We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector R{sub n}, which appears after photon absorption, on its kinetic inductance L{sub k} and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

  19. Compact pulse topology for adjustable high-voltage pulse generation using an SOS diode

    NARCIS (Netherlands)

    Driessen, A.B.J.M.; Heesch, van E.J.M.; Huiskamp, T.; Beckers, F.J.C.M.; Pemen, A.J.M.

    2014-01-01

    In this paper, a compact circuit topology is presented for pulsed power generation with a semiconductor opening switch (SOS). Such circuits require the generation of a fast forward current through the diode, followed by a reverse current that activates the recovery process. In general, magnetic

  20. Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

    International Nuclear Information System (INIS)

    Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

    1999-01-01

    There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

  1. Interconnected High-Voltage Pulsed-Power Converters System Design for H− Ion Sources

    CERN Document Server

    Aguglia, D

    2014-01-01

    This paper presents the design and experimental validations of a system of three new high-voltage (HV) pulsedpower converters for the H− sources. The system requires three pulsed voltages (50, 40, and 25 kV to ground) at 2-Hz repetition rate, for 700 μs of usable flat-top. The solution presents ripplefree output voltages and minimal stored energy to protect the ion source from the consequences of arc events. Experimental results on the final full-scale prototype are presented. In case of short-circuit events, the maximal energy delivered to the source is in the Joule range. HV flat-top stability of 1% is experimentally achieved with a simple Proportional-Integral- Derivative regulation and preliminary tuned H− source (e.g., radio frequency control, gas injection, and so forth). The system is running since more than a year with no power converter failures and damage to the source.

  2. Voltage control on TEG-inverter system with pulse width modulation

    International Nuclear Information System (INIS)

    Kimura, N.; Kinoshita, H.; Matsuura, K.

    1984-01-01

    An ocean thermoelectric generating system can be expected to supply cheap electric power in future. And it can be used as base power supply or isolated power source in developing areas. The authors propose to apply forced-commutation inverter to thermoelectric energy conversion system and construct an electric power station which can be operated without any other synchronous generator (S-G) and can control ac system as stable as S-G. This paper shows that inverters can control voltage constant, though within a range of 10% load change, by using pulse width modulation (PWM). It also describes the design of the voltage control system covering from 50% to 100% load with combination of PWM and output voltage tap changing of TEG

  3. Reliability of high-voltage pulse capacitors operating in large energy storages

    International Nuclear Information System (INIS)

    Kuchinskij, G.S.; Fedorova, V.S.; Shilin, O.V.

    1982-01-01

    To improve the reliability of pulse capacitors operating in capacitive energy storages, processes, resulting in break-down of capacitor insulation were investigated. A statistic model of failures was constructed and reliability of real capacitors, functioning at operating electric intensity Usub(oper) equal 70 kV/mm and at elevated intensity 90 kV/mm was calculated. Results of testing the IK50-ZU4 capacitor are given. The form of the capacitor service life distribution function was specified. To provide and confirm the assigned capacitor reliability, it is necessary to speed up tests at a higher voltage (1.3-1.5) Usub(oper). To improve the capacitor reliability, it is advisable to conduct acceptance tests, which include hold at increased constant voltage (1.3-1.5) Usub(oper) during 1-3 min and the effect of pulses of increased voltage (1.2-1.3) Usub(oper) with the pulse shape corresponding to operating conditions

  4. Effects of high voltage pulse trimming on structural properties of thick-film resistors

    Directory of Open Access Journals (Sweden)

    Stanimirović Zdravko

    2017-01-01

    Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

  5. Stability of high current diode under 100-nanosecond-pulse voltage

    International Nuclear Information System (INIS)

    Lai Dingguo; Qiu Aici; Zhang Yongmin; Huang Jianjun; Ren Shuqing; Yang Li

    2012-01-01

    Stability of high current diode under pulse voltage with 80 ns and 34 ns rise time was studied on the flash Ⅱ accelerator. Influence of rise time of diode voltage on startup time and cathode emission uniformity and repeatability of diode impedance was analyzed by comparing the experimental results with numerically simulated results, and the influence mechanism was discussed. The startup time of diode increases with the increasing of rise time of voltage, and the repeatability of diode impedance decreases. Discal plane cathode is prone to emit rays intensely in the center area, the time that plasma covers the surface of the cathode increases and the shielding effect has more impact on cathode emission according to the increase of rise time. Local intense emission on the cathode increases expansion speed of plasma and reduces the effective emission area. The stability of characteristic impedance of diode under a pulse voltage with slow rise time is decreased by the combined action of expansion speed of plasma and the effective emission area. (authors)

  6. New circuits high-voltage pulse generators with inductive-capacitive energy storage

    International Nuclear Information System (INIS)

    Gordeev, V.S.; Myskov, G.A.

    2001-01-01

    The paper describes new electric circuits of multi-cascade generators based on stepped lines. The distinction of the presented circuits consists in initial storage of energy in electric and magnetic fields simultaneously. The circuit of each generator,relations of impedances,values of initial current and charge voltages are selected in such a manner that the whole of initially stored energy is concentrated at the generator output as a result of transient wave processes. In ideal case the energy is transferred with 100% efficiency to the resistive load where a rectangular voltage pulse is formed, whose duration is equals to the double electrical length of the individual cascade. At the same time there is realized a several time increase of output voltage as compared to the charge voltage of the generator. The use of the circuits proposed makes it possible to ensure a several time increase (as compared to the selection of the number of cascades) of the generator energy storage, pulse current and output electric power

  7. Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

    Energy Technology Data Exchange (ETDEWEB)

    Prasetyaningrum, A., E-mail: ajiprasetyaningrum@gmail.com; Ratnawati,; Jos, B. [Department of Chemical Engineering, Faculty of Engineering, Diponegoro University Jl. Prof. H. Soedarto Tembalang, Semarang, Central Java, Indonesia, 50276 (Indonesia)

    2015-12-29

    Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O{sub 3}) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

  8. Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

    International Nuclear Information System (INIS)

    Prasetyaningrum, A.; Ratnawati,; Jos, B.

    2015-01-01

    Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O 3 ) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV

  9. Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

    Science.gov (United States)

    Prasetyaningrum, A.; Ratnawati, Jos, B.

    2015-12-01

    Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O3) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

  10. Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

    International Nuclear Information System (INIS)

    Min, Li; Xian-Wu, Mi

    2009-01-01

    This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. On-chip active gate bias circuit for MMIC amplifier applications with 100% threshold voltage variation compensation

    NARCIS (Netherlands)

    Hek, A.P. de; Busking, E.B.

    2006-01-01

    In this paper the design and performance of an on-chip active gate bias circuit for application in MMIC amplifiers, which gives 100% compensation for threshold variation and at the same time is insensitive to supply voltage variations, is discussed. Design equations have been given. In addition, the

  12. Frequency-Domain Maximum-Likelihood Estimation of High-Voltage Pulse Transformer Model Parameters

    CERN Document Server

    Aguglia, D; Martins, C.D.A.

    2014-01-01

    This paper presents an offline frequency-domain nonlinear and stochastic identification method for equivalent model parameter estimation of high-voltage pulse transformers. Such kinds of transformers are widely used in the pulsed-power domain, and the difficulty in deriving pulsed-power converter optimal control strategies is directly linked to the accuracy of the equivalent circuit parameters. These components require models which take into account electric fields energies represented by stray capacitance in the equivalent circuit. These capacitive elements must be accurately identified, since they greatly influence the general converter performances. A nonlinear frequency-based identification method, based on maximum-likelihood estimation, is presented, and a sensitivity analysis of the best experimental test to be considered is carried out. The procedure takes into account magnetic saturation and skin effects occurring in the windings during the frequency tests. The presented method is validated by experim...

  13. Ultra-long-pulse microwave negative high voltage power supply with fast protection

    International Nuclear Information System (INIS)

    Xu Weihua; Wu Junshuan; Zheng Guanghua; Huang Qiaolin; Yang Chunsheng; Zhou Yuanwei; Chen Yonghao

    1998-01-01

    Two 1.4 MW high voltage power supply (HVPS) modules with 3-5 s pulse duration have been developed for LHCD experiment in the HT-7 tokamak. The power source consists of a pulsed generator and the electric circuit. Duration of the ultra-long-pulse is controlled by switching-on dc relay immediately and switching-off ac contactor after a given time, and the fast protection is executed by a crowbar. Due to the soft starting of the power source, the problem of overvoltage induced by dc relay switching-on has been solved. Each power supply module outputs a rated power (-35 kV, 40 A) on the dummy load. With the klystrons connected as the load of the power supply modules, LHCD experiments have been conducted successfully in the HT-7 tokamak

  14. Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

    Science.gov (United States)

    Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

    2013-02-01

    For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

  15. Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

    2014-11-01

    The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

  16. Application of a substrate bias to control the droplet density on Cu(In,Ga)Se{sub 2} thin films grown by Pulsed Electron Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rampino, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Pattini, F., E-mail: rampino@imem.cnr.it [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Malagù, C.; Pozzetti, L. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1-44122 Ferrara (Italy); Stefancich, M. [LENS Laboratory, Masdar Institute of Science and Technology, Masdar City, PO Box 54224, Abu Dhabi (United Arab Emirates); Bronzoni, M. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy)

    2014-07-01

    One of the main shortcomings in the fabrication of thin-film solar cells by pulsed high-energy deposition techniques (i.e. Pulsed Laser Deposition or Pulsed Electron Deposition — PED), is the presence of a significant number of particulates on the film surface. This affects the morphological properties of the cell active layers and, ultimately, the performance of the final device. To reduce the density of these defects, we deposited a Cu(In,Ga)Se{sub 2} (CIGS) thin film by PED and studied the effect on the film morphology when a DC bias was applied between the substrate and the target. Our results show that a negative substrate voltage, comprised between 0 and − 300 V, can not only reduce the droplet density on the CIGS film surface of about one order of magnitude with respect to the standard unbiased case (from 6 × 10{sup 5} to 5 × 10{sup 4} cm{sup −2}), but also lower the maximum particulate size and the surface smoothness. When a positive voltage is applied, we observed that a significant increase in the droplet surface density (up to 10{sup 8} cm{sup −2}) occurs. The abrupt change in the preferred crystal orientation (switching from (112) to (220)/(204) by applying negative and positive biases, respectively) is also a direct consequence of the applied DC voltage. These results confirm that the external DC bias could be used as an additional parameter to control the physical properties of thin films grown by PED. - Highlights: • Cu(In,Ga)Se{sub 2} (CIGS) films were grown by Pulsed Electron Deposition (PED). • Positive and negative DC biases were applied between the target and the substrate. • The droplet density can be reduced by one order of magnitude by DC negative bias. • Chemical composition and grain orientation of CIGS are influenced by the DC bias. • The DC bias can be an additional parameter of PED for controlling the film properties.

  17. High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

    International Nuclear Information System (INIS)

    Ponomarev, A V; Pedos, M S; Scherbinin, S V; Mamontov, Y I; Ponomarev, S V

    2015-01-01

    In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface. (paper)

  18. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

    International Nuclear Information System (INIS)

    Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

    2013-01-01

    HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

  19. High-voltage Pulse-triggered SR Latch Level-Shifter Design Considerations

    DEFF Research Database (Denmark)

    Larsen, Dennis Øland; Llimos Muntal, Pere; Jørgensen, Ivan Harald Holger

    2014-01-01

    translating a signal from 0- 3 : 3 V to 87 : 5 - 100 V. The operation of this level-shifter is verified with measurements on a fabricated chip. The shortcomings of the implemented level-shifter in terms of power dissipation, transition delay, area, and startup behavior are then considered and an improved......This paper compares pulse-triggered level shifters with a traditional level-triggered topology for high-voltage ap- plications with supply voltages in the 50 V to 100 V range. It is found that the pulse-triggered SR (Set/Reset) latch level- shifter has a superior power consumption of 1800 W = MHz...... circuit is suggested which has been designed in three variants being able to translate the low-voltage 0- 3 : 3 V signal to 45 - 50 V, 85 - 90 V, and 95 - 100 V respectively. The improved 95 - 100 V level shifter achieves a considerably lower power consumption of 438 W = MHz along with a significantly...

  20. Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

    2017-11-01

    The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

  1. The reduction of leading- and trailing-edge of high-voltage steep pulse in plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Zhu Zongtao; Gui Gang; Wang Zhijian; Gong Chunzhi; Yang Shiqin; Tian Xiubo

    2010-01-01

    During plasma immersion ion implantation (PIII) processes, due to the capacitance effect of the coaxial cable and plasma load, the output voltage pulse of high-voltage modulator possesses a longer leading- and trailing-edge time. The leading- and trailing-edge of the high voltage (HV) pulse have a critical effect on the ion-energy uniformity, depth and dose distribution during PIII processes. In this work, a tetrode was used as a hard tube to switch the DC high voltage, and a HV pulse modulator with a maximum pulse voltage of 40 kV was built successfully. The effect of the trailing-edge time on the implantation uniformity was simulated by one-dimension PIC method. The potential on the control grids of the tetrode was optimized to obtain a HV pulse with a short rise time. In our system, 200 V potential on grid one is utilized and the leading-edge time of pulse can be as small as 1 μs. The IGBTs in series was utilized to release the remnant charges reserved in the equivalent capacitance of the plasma load and coaxial cable. Thus the trailing-edge time of the HV pulse could be reduced. The effect of the driver signals with different delay time and the absorption parameters of each IGBTs were simulated by PSPICE software to optimize the design the electric circuit. (authors)

  2. Simulation of subnanosecond streamers in atmospheric-pressure air: Effects of polarity of applied voltage pulse

    Energy Technology Data Exchange (ETDEWEB)

    Babaeva, N. Yu.; Naidis, G. V. [Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow 125412 (Russian Federation)

    2016-08-15

    Results of simulation of subnanosecond streamer propagation in corona gap configuration, obtained in the framework of 2D fluid model, are presented. Effects related with the polarity of a voltage pulse applied to the stressed electrode are discussed. It is argued that these effects (dependence of the discharge current and propagation velocity on the polarity of applied voltage) observed in experiments can be attributed to the difference in initial (preceding the streamer formation) distributions of charged species inside the gap. This difference can be caused by preionization (at negative polarity) of the gas inside the discharge gap by runaway electrons. Calculated streamers have large widths (up to 1 cm) and move with velocities in the range of 10{sup 9}–10{sup 10 }cm s{sup −1}, similar to experimental data.

  3. The effect of high voltage, high frequency pulsed electric field on slain ovine cortical bone.

    Science.gov (United States)

    Asgarifar, Hajarossadat; Oloyede, Adekunle; Zare, Firuz

    2014-04-01

    High power, high frequency pulsed electric fields known as pulsed power (PP) has been applied recently in biology and medicine. However, little attention has been paid to investigate the application of pulse power in musculoskeletal system and its possible effect on functional behavior and biomechanical properties of bone tissue. This paper presents the first research investigating whether or not PP can be applied safely on bone tissue as a stimuli and what will be the possible effect of these signals on the characteristics of cortical bone by comparing the mechanical properties of this type of bone pre and post expose to PP and in comparison with the control samples. A positive buck-boost converter was applied to generate adjustable high voltage, high frequency pulses (up to 500 V and 10 kHz). The functional behavior of bone in response to pulse power excitation was elucidated by applying compressive loading until failure. The stiffness, failure stress (strength) and the total fracture energy (bone toughness) were determined as a measure of the main bone characteristics. Furthermore, an ultrasonic technique was applied to determine and comprise bone elasticity before and after pulse power stimulation. The elastic property of cortical bone samples appeared to remain unchanged following exposure to pulse power excitation for all three orthogonal directions obtained from ultrasonic technique and similarly from the compression test. Nevertheless, the compressive strength and toughness of bone samples were increased when they were exposed to 66 h of high power pulsed electromagnetic field compared to the control samples. As the toughness and the strength of the cortical bone tissue are directly associated with the quality and integrity of the collagen matrix whereas its stiffness is primarily related to bone mineral content these overall results may address that although, the pulse power stimulation can influence the arrangement or the quality of the collagen network

  4. Characterization of a pulsed mode high voltage power supply for nuclear detectors

    International Nuclear Information System (INIS)

    Ghazali, A B; Ahmad, T S; Abdullah, N A

    2013-01-01

    This paper discusses the characterization of a pulsed mode high voltage power supply (HVPS) using LT1073 chip. The pulsed modulated signal generated from this chip is amplified using a step-up ferrite core transformer of 1:20 turn ratio and then further multiplied and converted into DC high voltage output using a diode-capacitor arrangement. The circuit is powered by a 9V alkaline battery but regulated at 5V supply. It was found that the output for this setup is 520V, 87 μA with 10% load regulation. This output is suitable to operate a pancake-type GM detector, typically model LND 7317 where the plateau is from 475V to 675V. It was also found that when a β-source with intensity of 120 cps is used, the power consumption of the circuit is 5 V, 10.1 mA only. When the battery was left 'on' for 40 hours continuously, the battery's voltage has dropped to 6.9V, meaning that the 5V supply as well as 520V output is still maintained. It is noted that the minimum output voltage of 475V has reached when the regulated supply has reduced to 4.6V and consequently the 9V battery dropped to 6.5V, and this had happened after approximately 3 days of continuous operation. The power efficiency for this circuitry was found to be 89.5%. This result has far better in performance since the commercial portable equipment of this type has normally specified that not less than 8 hours continuous operation only. On the circuit design for this power supply, it was found that the enveloped frequency is 133 Hz with approximately 50% duty cycle. The modulated frequency during 'on' state was found to be 256 KHz in which the majority of power consumption is required.

  5. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  6. Voltage measurements at the vacuum post-hole convolute of the Z pulsed-power accelerator

    Directory of Open Access Journals (Sweden)

    E. M. Waisman

    2014-12-01

    Full Text Available Presented are voltage measurements taken near the load region on the Z pulsed-power accelerator using an inductive voltage monitor (IVM. Specifically, the IVM was connected to, and thus monitored the voltage at, the bottom level of the accelerator’s vacuum double post-hole convolute. Additional voltage and current measurements were taken at the accelerator’s vacuum-insulator stack (at a radius of 1.6 m by using standard D-dot and B-dot probes, respectively. During postprocessing, the measurements taken at the stack were translated to the location of the IVM measurements by using a lossless propagation model of the Z accelerator’s magnetically insulated transmission lines (MITLs and a lumped inductor model of the vacuum post-hole convolute. Across a wide variety of experiments conducted on the Z accelerator, the voltage histories obtained from the IVM and the lossless propagation technique agree well in overall shape and magnitude. However, large-amplitude, high-frequency oscillations are more pronounced in the IVM records. It is unclear whether these larger oscillations represent true voltage oscillations at the convolute or if they are due to noise pickup and/or transit-time effects and other resonant modes in the IVM. Results using a transit-time-correction technique and Fourier analysis support the latter. Regardless of which interpretation is correct, both true voltage oscillations and the excitement of resonant modes could be the result of transient electrical breakdowns in the post-hole convolute, though more information is required to determine definitively if such breakdowns occurred. Despite the larger oscillations in the IVM records, the general agreement found between the lossless propagation results and the results of the IVM shows that large voltages are transmitted efficiently through the MITLs on Z. These results are complementary to previous studies [R. D. McBride et al., Phys. Rev. ST Accel. Beams 13, 120401 (2010

  7. A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment.

    Science.gov (United States)

    Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

    2017-08-01

    A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

  8. Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

    Science.gov (United States)

    Lin, Bor-Ren

    2018-04-01

    This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

  9. Electrostatic precipitators for coal thermal power plants energized by means of narrow pulse voltage

    Energy Technology Data Exchange (ETDEWEB)

    Dinelli, G.; Mattachini, F.; Bogani, V.; Baldacci, A.; Tarli, R. (ENEL-CRTN, Direzione Studi e Ricerche, Milan (Italy) ENEL, VDT Settore Tecnico, Direzione Produzione e Trasmissione, Rome (Italy))

    1990-09-01

    The efficiency of electrostatic precipitators, widely used in thermal power plants to clean flue gases from solid particulate, is strongly dependent both on the way particles are electrically charged and on the characteristics of the electric field within the interelectrodic space of the precipitator. Such operating may become inadequate under varying particle characteristics and operating conditions of the thermal plant, therefore bringing to a reduction in the precipitator collection efficiency. An innovative technique, by generating a pulsed corona in the precipitator, allows a substantial improvement of both the particle charging and the collection processes and an increase in the operation flexibility of the electrostatic precipitator. The narrow pulse voltage energization has been extensively tested at a coal thermal unit having the electrostatic precipitators equipped with both conventional and pulse power sets. The long duration tests confirmed the following results: 1) high reliability of the pulse power sets and a considerable improvement in the precipitator collection efficiency; 2) a decrease in the particulate emissions, with coals whose ashes are of difficult collection, ranging between 75% and 85% of those with conventional energization; 3) a reduction by a factor of about 5 in the consumption of electric power by the electrostatic precipitation process.

  10. Influence of bias voltage on properties of AlCrN coatings prepared by cathodic arc deposition

    International Nuclear Information System (INIS)

    Lomello, F.; Sanchette, F.; Schuster, F.; Tabarant, M.; Billard, A.

    2013-01-01

    AlCrN coatings were prepared by vacuum cathodic arc deposition. This low-temperature technique has been chosen due to its versatility, allowing the industrial up-scaling. In this study, the attention was focused on the correlation of the bias voltage with the resulting mechanical-tribological properties. For this purpose, the bias voltage was varied from 0 to -150 V. Indeed, the variation of grain sizes from 24 to 16 nm as well as the residual stresses from -0.68 to -8.94 GPa lead to obtain different mechanical-tribological properties. In this context, the sample deposited at -100 V exhibited an enhanced hardness (50 ± 2 GPa) and an acceptable wear resistance. (authors)

  11. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    International Nuclear Information System (INIS)

    Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

    2012-01-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

  12. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

    Energy Technology Data Exchange (ETDEWEB)

    Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)

    2014-08-14

    Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

  13. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  14. Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

    International Nuclear Information System (INIS)

    Lee, Gyeo-Re; Hwang, Sung-Wook; Min, Jae-Ho; Moon, Sang Heup

    2002-01-01

    The dependence of the SiO 2 etch rate on the angle of ions incident on the substrate surface was studied over a bias voltage range from -20 to -600 V in a high-density CHF 3 plasma using a Faraday cage to control the ion incident angle. The effect of the bottom plane on the sidewall etching was also examined. Differences in the characteristics of the etch rate as a function of the ion angle were observed for different bias voltage regions. When the absolute value of the bias voltage was smaller than 200 V, the normalized etch rate (NER) defined as the etch rate normalized by the rate on the horizontal surface, changed following a cosine curve with respect to the ion incident angle, defined as the angle between the ion direction and the normal of the substrate surface. When the magnitude of the bias voltage was larger than 200 V, the NER was deviated to higher values from those given by a cosine curve at ion angles between 30 deg. and 70 deg. , and then drastically decreased at angles higher than 70 deg. until a net deposition was observed at angles near 90 deg. . The characteristic etch-rate patterns at ion angles below 70 deg. were determined by the ion energy transferred to the surface, which affected the SiO 2 etch rate and, simultaneously, the rate of removal of a fluorocarbon polymer film formed on the substrate surface. At high ion angles, particles emitted from the bottom plane contributed to polymer formation on and affected the etching characteristics of the substrate

  15. Enhancing Food Processing by Pulsed and High Voltage Electric Fields: Principles and Applications.

    Science.gov (United States)

    Wang, Qijun; Li, Yifei; Sun, Da-Wen; Zhu, Zhiwei

    2018-02-02

    Improvements in living standards result in a growing demand for food with high quality attributes including freshness, nutrition and safety. However, current industrial processing methods rely on traditional thermal and chemical methods, such as sterilization and solvent extraction, which could induce negative effects on food quality and safety. The electric fields (EFs) involving pulsed electric fields (PEFs) and high voltage electric fields (HVEFs) have been studied and developed for assisting and enhancing various food processes. In this review, the principles and applications of pulsed and high voltage electric fields are described in details for a range of food processes, including microbial inactivation, component extraction, and winemaking, thawing and drying, freezing and enzymatic inactivation. Moreover, the advantages and limitations of electric field related technologies are discussed to foresee future developments in the food industry. This review demonstrates that electric field technology has a great potential to enhance food processing by supplementing or replacing the conventional methods employed in different food manufacturing processes. Successful industrial applications of electric field treatments have been achieved in some areas such as microbial inactivation and extraction. However, investigations of HVEFs are still in an early stage and translating the technology into industrial applications need further research efforts.

  16. Pulsed Current-Voltage-Induced Perturbations of a Premixed Propane/Air Flame

    Directory of Open Access Journals (Sweden)

    Jacob. B. Schmidt

    2011-01-01

    Full Text Available The effect of millisecond wide sub-breakdown pulsed voltage-current induced flow perturbation has been measured in premixed laminar atmospheric pressure propane/air flame. The flame equivalence ratios were varied from 0.8 to 1.2 with the flow speeds near 1.1 meter/second. Spatio-temporal flame structure changes were observed through collection of CH (A-X and OH (A-X chemiluminescence and simultaneous spontaneous Raman scattering from N2. This optical collection scheme allows us to obtain a strong correlation between the measured gas temperature and the chemiluminescence intensity, verifying that chemiluminescence images provide accurate measurements of flame reaction zone structure modifications. The experimental results suggest that the flame perturbation is caused by ionic wind originating only from the radial positive space-charge distribution in/near the cathode fall. A net momentum transfer acts along the annular space discharge distribution in the reaction zone at or near the cathode fall which modifies the flow field near the cathodic burner head. This radially inward directed body force appears to enhance mixing similar to a swirl induced modification of the flame structure. The flame fluidic response exhibit a strong dependence on the voltage pulse width ≤10 millisecond.

  17. Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

    International Nuclear Information System (INIS)

    Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

    2008-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. A HIGH CURRENT, HIGH VOLTAGE SOLID-STATE PULSE GENERATOR FOR THE NIF PLASMA ELECTRODE POCKELS CELL

    International Nuclear Information System (INIS)

    Arnold, P A; Barbosa, F; Cook, E G; Hickman, B C; Akana, G L; Brooksby, C A

    2007-01-01

    A high current, high voltage, all solid-state pulse modulator has been developed for use in the Plasma Electrode Pockels Cell (PEPC) subsystem in the National Ignition Facility. The MOSFET-switched pulse generator, designed to be a more capable plug-in replacement for the thyratron-switched units currently deployed in NIF, offers unprecedented capabilities including burst-mode operation, pulse width agility and a steady-state pulse repetition frequency exceeding 1 Hz. Capable of delivering requisite fast risetime, 17 kV flattop pulses into a 6 (Omega) load, the pulser employs a modular architecture characteristic of the inductive adder technology, pioneered at LLNL for use in acceleration applications, which keeps primary voltages low (and well within the capabilities of existing FET technology), reduces fabrication costs and is amenable to rapid assembly and quick field repairs

  19. Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

    Science.gov (United States)

    Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

    2014-12-01

    We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

  20. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  1. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  2. A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

    KAUST Repository

    Tayyab, Umais; Alzaher, Hussain A.

    2017-01-01

    An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC

  3. Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

    Energy Technology Data Exchange (ETDEWEB)

    Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen [Key Lab of Materials Modification, Dalian University of Technology, Ministry of Education, Dalian 116024 (China)

    2013-05-13

    Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

  4. Synergistic effects of liquid and gas phase discharges using pulsed high voltage for dyes degradation in the presence of oxygen.

    Science.gov (United States)

    Yang, Bin; Zhou, Minghua; Lei, Lecheng

    2005-07-01

    The technology of combined liquid and gas phase discharges (LGD) using pulsed high voltage for dyes degradation was developed in this study. Apparent synergistic effects for Acid orange II (AO) degradation in the presence of oxygen were observed. The enhancement of AO degradation rate was around 302%. Furthermore, higher energy efficiency was obtained comparing with individual liquid phase discharge (LD) or gas phase discharge process (GD). The AO degradation in the presence of oxygen by LGD proceeded through the direct ozone oxidation and the ozone decomposition induced by LD. Important operating parameters such as electrode distance, applied voltage, pulse repetition rate, and types of dyes were further investigated.

  5. [Degradation of 4-chlorophenol in aqueous solution by high-voltage pulsed discharge-ozone technology].

    Science.gov (United States)

    Wen, Yuezhong; Jiang, Xuanzhen; Liu, Weiping

    2002-03-01

    The combination of high voltage pulse discharge and ozonation as an advanced oxidation technology was used to investigate the degradation of 4-chlorophenol (4-CP) in water. The factors that affect the rate of degradation were discussed. The 1.95 x 10(-3) mol/L solutions of 4-CP were almost completely (96%) degraded after the discharge treatment of 30 min. The degradation of 4-CP was investigated as a function of the ozone concentration, radical scavenger and electrode distance. The rate of 4-CP degradation increases with an increase in ozone concentration and a decrease in the electrode distance from 20 mm to 10 mm. The presence of radical scavenger decreased the rate of 4-CP degradation.

  6. A timing detector with pulsed high-voltage power supply for mass measurements at CSRe

    International Nuclear Information System (INIS)

    Zhang, W.; Tu, X.L.; Wang, M.; Zhang, Y.H.; Xu, H.S.; Litvinov, Yu. A.; Blaum, K.

    2014-01-01

    Accuracy of nuclear mass measurements in storage rings depends critically on the accuracy with which the revolution times of stored ions can be obtained. In such experiments, micro-channel plates (MCP) are used as timing detectors. Due to large phase space of injected secondary beams, a large number of ions cannot be stored in the ring and is lost within the first few revolutions. However, these ions interact with the detector and can saturate the MCP and thus deteriorate its performance. In order to eliminate such effects, a fast, pulsed high-voltage power supply (PHVPS) has been employed which keeps the detector switched-off during the first few revolutions. The new detector setup was taken into operation at the Experimental Cooler-Storage-Ring CSRe in Lanzhou and resulted in a significant improvement of the detector amplitude and efficiency characteristics

  7. Bipolar High-Voltage, Long-Duration Pulsed Radiofrequency Improves Pain Relief in Postherpetic Neuralgia.

    Science.gov (United States)

    Wan, Cheng-Fu; Liu, Yan; Dong, Dao-Song; Zhao, Lin; Xi, Qi; Yu, Xue; Cui, Wen-Yao; Wang, Qiu-Shi; Song, Tao

    2016-07-01

    Postherpetic neuralgia (PHN) is often refractory to existing treatments. Treatment of the dorsal root ganglion (DRG) using monopolar pulsed radiofrequency (PRF), which is a non- or minimally neurodestructive technique, is not efficacious in all patients. This study aimed to determine the safety and clinical efficacy of bipolar high-voltage, long-duration PRF on the DRG in PHN patients. Self before-after controlled clinical trial. Department of Pain Medicine, the First Affiliated Hospital of China Medical University. Ninety patients diagnosed with PHN for > 3months were included. Bipolar high-voltage, long-duration PRF at 42°C for 900 seconds was applied after the induction of paresthesias covered the regions of hyperalgesic skin. The therapeutic effects were evaluated using a visual analog scale (VAS) and the 36-item Short Form health survey (SF-36) before treatment and one, 4, 8, and 12 weeks after PRF. The VAS scores at one, 4, 8, and 12 weeks after PRF treatment were significantly lower than before treatment (P DRG is an effective and safe therapeutic alternative for PHN patients. This treatment could improve the quality of life of PHN patients. NO ChiCTR-OCS-14005461.

  8. Influence of duration and rate of pulse rise of the applied voltage on ozone concentration in the barrier glow discharge

    International Nuclear Information System (INIS)

    Krasnyj, V.V.; Klosovski, A.V.; Knysh, A.S.; Shvets, O.M.; Taran, V.S.; Tereshin, V.I.

    2005-01-01

    The barrier glow discharge between two planar electrodes, covered with dielectric, is studied under high-voltage pulsed power supply. Wide applications of such type of discharges, in particular, for ozone production, stimulated a number of investigations in this direction. In this work we investigated the dependence of ozone concentration on the duration and the rate of pulse rise of the applied voltage. The thyristor converter circuit with the shortening of input pulses on the base of the saturable throttle was used for the realization of this task. The output pulses with amplitude up to 15 kV, repetition frequency of 1 kHz, pulse duration of 0.3 μs (or 7 μs) and the rate of pulse rise of 0.1 μs were generated with this scheme. Measurements of the ozone concentration produced in the air mixture have shown that its value increased by factor two with variation of the rate of pulse rise from 0.5 μs to 0.1 μs (for pulse duration of 7 μs). The dependence of the ozone concentration on the variation of air mixture pressure in the discharge gap of reactor was investigated also. It was shown proportional increase of the output concentration of ozone with increasing the pressure value. Spectroscopic measurements carried out in the ultraviolet spectrum made it possible to analyze changing the concentration of ozone and nitric components. (author)

  9. Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

    International Nuclear Information System (INIS)

    Wang Qimin; Kim, Kwang Ho

    2008-01-01

    Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

  10. Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Jinlong Jiang

    2014-01-01

    Full Text Available The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3 carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2 ratio of the films.

  11. Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities

    International Nuclear Information System (INIS)

    Hao, Yu; Rouxinol, Francisco; LaHaye, M. D.

    2014-01-01

    We present the design of a reflective stop-band filter based on quasi-lumped elements that can be utilized to introduce large dc and low-frequency voltage biases into a low-loss superconducting coplanar waveguide (CPW) cavity. Transmission measurements of the filter are seen to be in good agreement with simulations and demonstrate insertion losses greater than 20 dB in the range of 3–10 GHz. Moreover, transmission measurements of the CPW's fundamental mode demonstrate that loaded quality factors exceeding 10 5 can be achieved with this design for dc voltages as large as 20 V and for the cavity operated in the single-photon regime. This makes the design suitable for use in a number of applications including qubit-coupled mechanical systems and circuit QED

  12. Dual branch high voltage pulse generator for the beam extraction of the Large Hadron Collider

    CERN Document Server

    Bonthond, J; Ducimetière, L; Jansson, U; Vossenberg, Eugène B

    2002-01-01

    The LHC beam extraction kicker system, MKD, is composed of 15 fast kicker magnets per beam to extract the particles in one turn from the collider and to dispose them, after dilution, on an external absorber. Each magnet is powered by a separate pulse generator. The original single branch generator consisted of a discharge capacitor in series with a solid state closing switch left bracket 1 right bracket operating at 30 kV. In combination with a parallel freewheel diode stack this generator produced a current pulse of 2.7 mus rise time, 18.5 kA amplitude and about 1.8 ms fall time, of which only about 90 mus are needed to dump the beam. The freewheel diode circuit is equipped with a flat top current droop compensation network, consisting of a low voltage, low stray inductance, high current discharge capacitor. Extensive reliability studies have meanwhile suggested to further increase the operational safety of this crucial system by equipping each generator with two parallel branches. This paper presents the re...

  13. Improving the output voltage waveform of an intense electron-beam accelerator based on helical type Blumlein pulse forming line

    Directory of Open Access Journals (Sweden)

    Xin-Bing Cheng

    2010-07-01

    Full Text Available The Blumlein pulse forming line (BPFL consisting of an inner coaxial pulse forming line (PFL and an outer coaxial PFL is widely used in the field of pulsed power, especially for intense electron-beam accelerators (IEBA. The output voltage waveform determines the quality and characteristics of the output beam current of the IEBA. Comparing with the conventional BPFL, an IEBA based on a helical type BPFL can increase the duration of the output voltage in the same geometrical volume. However, for the helical type BPFL, the voltage waveform on a matched load may be distorted which influences the electron-beam quality. In this paper, an IEBA based on helical type BPFL is studied theoretically. Based on telegrapher equations of the BPFL, a formula for the output voltage of IEBA is obtained when the transition section is taken into account, where the transition section is between the middle cylinder of BPFL and the load. From the theoretical analysis, it is found that the wave impedance and transit time of the transition section influence considerably the main pulse voltage waveform at the load, a step is formed in front of the main pulse, and a sharp spike is also formed at the end of the main pulse. In order to get a well-shaped square waveform at the load and to improve the electron-beam quality of such an accelerator, the wave impedance of the transition section should be equal to that of the inner PFL of helical type BPFL and the transit time of the transition section should be designed as short as possible. Experiments performed on an IEBA with the helical type BPFL show reasonable agreement with theoretical analysis.

  14. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

  15. Note: Compact high voltage pulse transformer made using a capacitor bank assembled in the shape of primary.

    Science.gov (United States)

    Shukla, Rohit; Banerjee, Partha; Sharma, Surender K; Das, Rashmita; Deb, Pankaj; Prabaharan, T; Das, Basanta; Adhikary, Biswajit; Verma, Rishi; Shyam, Anurag

    2011-10-01

    The experimental results of an air-core pulse transformer are presented, which is very compact (capacitor bank that is fabricated in such a way that the capacitor bank with its switch takes the shape of single-turn rectangular shaped primary of the transformer. A high voltage capacitor assembly (pulse-forming-line capacitor, PFL) of 5.1 nF is connected with the secondary of transformer. The transformer output voltage is 160 kV in its second peak appearing in less than 2 μS from the beginning of the capacitor discharge. The primary capacitor bank can be charged up to a maximum of 18 kV, with the voltage delivery of 360 kV in similar capacitive loads.

  16. Survey of high-voltage pulse technology suitable for large-scale plasma source ion implantation processes

    International Nuclear Information System (INIS)

    Reass, W.A.

    1994-01-01

    Many new plasma processes ideas are finding their way from the research lab to the manufacturing plant floor. These require high voltage (HV) pulse power equipment, which must be optimized for application, system efficiency, and reliability. Although no single HV pulse technology is suitable for all plasma processes, various classes of high voltage pulsers may offer a greater versatility and economy to the manufacturer. Technology developed for existing radar and particle accelerator modulator power systems can be utilized to develop a modern large scale plasma source ion implantation (PSII) system. The HV pulse networks can be broadly defined by two classes of systems, those that generate the voltage directly, and those that use some type of pulse forming network and step-up transformer. This article will examine these HV pulse technologies and discuss their applicability to the specific PSII process. Typical systems that will be reviewed will include high power solid state, hard tube systems such as crossed-field ''hollow beam'' switch tubes and planar tetrodes, and ''soft'' tube systems with crossatrons and thyratrons. Results will be tabulated and suggestions provided for a particular PSII process

  17. Effect of self-bias voltage on the wettability, chemical functionality and nanomechanical properties of hexamethyldisiloxane films

    Energy Technology Data Exchange (ETDEWEB)

    Albuquerque, M.D.F. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Santos, E. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Faculty of Civil Engineering, University Center of Volta Redonda (UniFOA), Volta Redonda, RJ (Brazil); Perdone, R.R.T. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Simao, R.A., E-mail: renata@metalmat.ufrj.br [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil)

    2014-08-01

    Copper and silicon substrates were coated by chemical vapor deposition using hexamethyldisiloxane (HMDSO) as the precursor gas. Substrates were placed both at the anode and cathode of a glow discharge reactor, and films were deposited using different self-bias voltages. This study focuses on comparing the differences between the hydrophilicity, polymeric character, chemical structure and nanomechanical properties of HMDSO films produced at the cathode and anode of the reactor at different self-bias voltages. Fourier transform infrared spectroscopy and Raman confocal spectroscopy indicated a significant increase in the content of organic groups when films were deposited at the anode. Analyzing the nanomechanical properties of the cathode and anode films indicated that the penetration depth was higher for samples prepared at the cathode (lower hardness) compared with the samples produced at the anode. The measured contact angles indicated that all samples became hydrophobic with water contact angles close to 100°; however, a different lyophobic character was observed when diiodomethane was used. Films produced at the anode with diiodomethane exhibited higher contact angles than did films produced at the cathode. - Highlights: • Hexamethyldisiloxane (HMDSO) films deposited by CVD on Si and Cu substrates • HMDSO films produced at the anode have greater content of organic SiO{sub 4} groups. • Films produced at the anode are harder than those deposited at the cathode. • HMDSO films produced at the cathode exhibited higher elastic recovery. • All films are hydrophobic (θ close to 100°)

  18. Effect of self-bias voltage on the wettability, chemical functionality and nanomechanical properties of hexamethyldisiloxane films

    International Nuclear Information System (INIS)

    Albuquerque, M.D.F.; Santos, E.; Perdone, R.R.T.; Simao, R.A.

    2014-01-01

    Copper and silicon substrates were coated by chemical vapor deposition using hexamethyldisiloxane (HMDSO) as the precursor gas. Substrates were placed both at the anode and cathode of a glow discharge reactor, and films were deposited using different self-bias voltages. This study focuses on comparing the differences between the hydrophilicity, polymeric character, chemical structure and nanomechanical properties of HMDSO films produced at the cathode and anode of the reactor at different self-bias voltages. Fourier transform infrared spectroscopy and Raman confocal spectroscopy indicated a significant increase in the content of organic groups when films were deposited at the anode. Analyzing the nanomechanical properties of the cathode and anode films indicated that the penetration depth was higher for samples prepared at the cathode (lower hardness) compared with the samples produced at the anode. The measured contact angles indicated that all samples became hydrophobic with water contact angles close to 100°; however, a different lyophobic character was observed when diiodomethane was used. Films produced at the anode with diiodomethane exhibited higher contact angles than did films produced at the cathode. - Highlights: • Hexamethyldisiloxane (HMDSO) films deposited by CVD on Si and Cu substrates • HMDSO films produced at the anode have greater content of organic SiO 4 groups. • Films produced at the anode are harder than those deposited at the cathode. • HMDSO films produced at the cathode exhibited higher elastic recovery. • All films are hydrophobic (θ close to 100°)

  19. Influence of substrate bias voltage on structure and properties of the CrAlN films deposited by unbalanced magnetron sputtering

    Science.gov (United States)

    Lv, Yanhong; Ji, Li; Liu, Xiaohong; Li, Hongxuan; Zhou, Huidi; Chen, Jianmin

    2012-02-01

    The CrAlN films were deposited on silicon and stainless steel substrates by unbalanced magnetron sputtering system. The influence of substrate bias on deposition rate, composition, structure, morphology and properties of the CrAlN films was investigated. The results showed that, with the increase of the substrate bias voltage, the deposition rate decreased accompanied by a change of the preferred orientation of the CrAlN film from (2 2 0) to (2 0 0). The grain size and the average surface roughness of the CrAlN films declined as the bias voltage increases above -100 V. The morphology of the films changed from obviously columnar to dense glass-like structure with the increase of the bias voltage from -50 to -250 V. Meanwhile, the films deposited at moderate bias voltage had better mechanical and tribological properties, while the films deposited at higher bias voltage showed better corrosion resistance. It was found that the corrosion resistance improvement was not only attributed to the low pinhole density of the film, but also to chemical composition of films.

  20. Decomposition of methane to hydrogen using nanosecond pulsed plasma reactor with different active volumes, voltages and frequencies

    International Nuclear Information System (INIS)

    Khalifeh, Omid; Mosallanejad, Amin; Taghvaei, Hamed; Rahimpour, Mohammad Reza; Shariati, Alireza

    2016-01-01

    Highlights: • CH 4 conversion into H 2 is investigated in a nanosecond pulsed DBD reactor. • The absence of CO and CO 2 in the product gas is highly favorable. • Effects of external electrode length, applied voltage and frequency are examined. • The maximum efficiency of 7.23% is achieved at the electrode length of 15 cm. • The maximum CH 4 conversion of 87.2% is obtained at discharge power 268.92 W. - Abstract: In this paper, the methane conversion into hydrogen is investigated experimentally in a nanosecond pulsed DBD reactor. In order to achieve pure hydrogen production with minimum power consumption, effects of some operating parameters including external electrode length, applied voltage and pulse repetition frequency have been evaluated. Results show that although higher CH 4 conversion and H 2 concentration can be obtained at longer electrode lengths, higher applied voltages and pulse repetition frequencies, these parameters should be optimized for efficient hydrogen production. Actually, the maximum CH 4 conversion of 87.2% and maximum hydrogen percentage of 80% are obtained at the external electrode length, discharge power, voltage and frequency of 15 cm, 268.92 W, 12 kV and 10 kHz, respectively. However, the maximum efficiency of 7.23% is achieved at the external electrode length of 15 cm, applied voltage of 6 kV, pulse repetition frequency of 0.9 kHz and discharge power of 4 W. Furthermore, at this condition, due to low temperature of discharge zone very little amount of solid carbon was observed on the inner electrode surface of the reactor.

  1. 1.3 MV voltage pulse shaping for 13 Ohm load by means of the VMG-160 magnetocumulative generator

    International Nuclear Information System (INIS)

    Kravchenko, A.S.; Boriskin, A.S.; Vilkov, Yu.V.; Selemir, V.D.; Dimant, E.M.; Yuryzhev, A.S.; Zenkov, D.I.; Tkachuk, A.A.; Kirshanova, E.N.; Kozlov, M.B.

    2000-01-01

    The device on the basis of a magnetocumulative generator with a transformer output making it possible to form powerful (≥ 100 GW) pulses with current rise time of approximately 1 μs on the load of about 10 Ohm is described. The results of testing the generator on the load in form of a liquid resistor are presented. The voltage pulse of 13 MV is obtained on the resistive load of 13 Ohm as a result of the superconductors electrical explosion. The results of the numerical modeling indicated the possibility of forming the voltage pulses ≥ 1MV with the current rise time of approximately 100 ns on the resistance of 13 Ohm [ru

  2. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    Energy Technology Data Exchange (ETDEWEB)

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  3. Modular high-voltage bias generator powered by dual-looped self-adaptive wireless power transmission.

    Science.gov (United States)

    Xie, Kai; Huang, An-Feng; Li, Xiao-Ping; Guo, Shi-Zhong; Zhang, Han-Lu

    2015-04-01

    We proposed a modular high-voltage (HV) bias generator powered by a novel transmitter-sharing inductive coupled wireless power transmission technology, aimed to extend the generator's flexibility and configurability. To solve the problems caused through an uncertain number of modules, a dual-looped self-adaptive control method is proposed that is capable of tracking resonance frequency while maintaining a relatively stable induction voltage for each HV module. The method combines a phase-locked loop and a current feedback loop, which ensures an accurate resonance state and a relatively constant boost ratio for each module, simplifying the architecture of the boost stage and improving the total efficiency. The prototype was built and tested. The input voltage drop of each module is less than 14% if the module number varies from 3 to 10; resonance tracking is completed within 60 ms. The efficiency of the coupling structure reaches up to 95%, whereas the total efficiency approaches 73% for a rated output. Furthermore, this technology can be used in various multi-load wireless power supply applications.

  4. Plasma density enhancement in atmospheric-pressure dielectric-barrier discharges by high-voltage nanosecond pulse in the pulse-on period: a PIC simulation

    International Nuclear Information System (INIS)

    Sang Chaofeng; Sun Jizhong; Wang Dezhen

    2010-01-01

    A particle-in-cell (PIC) plus Monte Carlo collision simulation is employed to investigate how a sustainable atmospheric pressure single dielectric-barrier discharge responds to a high-voltage nanosecond pulse (HVNP) further applied to the metal electrode. The results show that the HVNP can significantly increase the plasma density in the pulse-on period. The ion-induced secondary electrons can give rise to avalanche ionization in the positive sheath, which widens the discharge region and enhances the plasma density drastically. However, the plasma density stops increasing as the applied pulse lasts over certain time; therefore, lengthening the pulse duration alone cannot improve the discharge efficiency further. Physical reasons for these phenomena are then discussed.

  5. Plasma density enhancement in atmospheric-pressure dielectric-barrier discharges by high-voltage nanosecond pulse in the pulse-on period: a PIC simulation

    Science.gov (United States)

    Sang, Chaofeng; Sun, Jizhong; Wang, Dezhen

    2010-02-01

    A particle-in-cell (PIC) plus Monte Carlo collision simulation is employed to investigate how a sustainable atmospheric pressure single dielectric-barrier discharge responds to a high-voltage nanosecond pulse (HVNP) further applied to the metal electrode. The results show that the HVNP can significantly increase the plasma density in the pulse-on period. The ion-induced secondary electrons can give rise to avalanche ionization in the positive sheath, which widens the discharge region and enhances the plasma density drastically. However, the plasma density stops increasing as the applied pulse lasts over certain time; therefore, lengthening the pulse duration alone cannot improve the discharge efficiency further. Physical reasons for these phenomena are then discussed.

  6. A new method for compensation of the effect of charging transformer's leakage inductance on PFN voltage regulation in Klystron pulse modulators

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Akhil, E-mail: akhilpatel@rrcat.gov.in; Kale, Umesh; Shrivastava, Purushottam

    2017-04-21

    The Line type modulators have been widely used to generate high voltage rectangular pulses to power the klystron for high power RF generation. In Line type modulator, the Pulse Forming Network (PFN) which is a cascade combination of lumped capacitors and inductors is used to store the electrical energy. The charged PFN is then discharged into a klystron by firing a high voltage Thyratron switch. This discharge generates a high voltage rectangular pulse across the klystron electrodes. The amplitude and phase of Klystron's RF output is governed by the high voltage pulse amplitude. The undesired RF amplitude and phase stability issues arises at the klystron's output due to inter-pulse and during the pulse amplitude variations. To reduce inter-pulse voltage variations, the PFN is required to be charged at the same voltage after every discharge cycle. At present, the combination of widely used resonant charging and deQing method is used to regulate the pulse to pulse PFN voltage variations but the charging transformer's leakage inductance puts an upper bound on the regulation achievable by this method. Here we have developed few insights of the deQing process and devised a new compensation method to compensate this undesired effect of charging transformer's leakage inductance on the pulse to pulse PFN voltage stability. This compensation is accomplished by the controlled partial discharging of the split PFN capacitor using a low voltage MOSFET switch. Theoretically, very high values of pulse to pulse voltage stability may be achieved using this method. This method may be used in deQing based existing modulators or in new modulators, to increase the pulse to pulse voltage stability, without having a very tight bound on charging transformer's leakage inductance. Given a stable charging power supply, this method may be used to further enhance the inter-pulse voltage stability of modulators which employ the direct charging, after replacing the

  7. Efficiency of high- and low-voltage pulse combinations for gene electrotransfer in muscle, liver, tumor, and skin

    DEFF Research Database (Denmark)

    André, F M; Gehl, J; Sersa, G

    2008-01-01

    Gene electrotransfer is gaining momentum as an efficient methodology for nonviral gene transfer. In skeletal muscle, data suggest that electric pulses play two roles: structurally permeabilizing the muscle fibers and electrophoretically supporting the migration of DNA toward or across the permeab......Gene electrotransfer is gaining momentum as an efficient methodology for nonviral gene transfer. In skeletal muscle, data suggest that electric pulses play two roles: structurally permeabilizing the muscle fibers and electrophoretically supporting the migration of DNA toward or across...... the permeabilized membrane. To investigate this further, combinations of permeabilizing short high-voltage pulses (HV; hundreds of V/cm) and mainly electrophoretic long low-voltage pulses (LV; tens of V/cm) were investigated in muscle, liver, tumor, and skin in rodent models. The following observations were made......, but not to liver; and (4) efficient gene electrotransfer was achieved with HV field strengths below the detectability thresholds for permeabilization; and (5) the lag time interval between the HV and LV pulses decreased sensitivity to the HV pulses, enabling a wider HV amplitude range. In conclusion, HV plus LV...

  8. On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

    Science.gov (United States)

    Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

    2017-12-01

    The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

  9. Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

    Science.gov (United States)

    Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

    2017-06-01

    This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

  10. Luminous flux improvement of xenon fluorescent lamps by applying synchronized high-voltage pulse to the auxiliary external electrode

    Energy Technology Data Exchange (ETDEWEB)

    Motomura, Hideki; Oka, Kojiro; Sogabe, Toru; Jinno, Masafumi, E-mail: hmoto@mayu.ee.ehime-u.ac.jp [Department of Electrical and Electronic Engineering, Ehime University 3 Bunkyo-cho, Matsuyama, Ehime 790-8577 (Japan)

    2011-06-08

    As the environmental awareness of people becomes stronger, the demand for mercury-free light sources also becomes stronger. The authors have been developing cold cathode fluorescent lamps in which xenon gas is filled as an ultraviolet radiator instead of mercury. Previously the authors reported the luminous flux enhancement method using a grounded auxiliary external electrode (AEE). In this paper, in order to improve the luminous flux much more, a positive voltage pulse which was synchronized to the main driving negative voltage pulse was applied to the AEE. As a result, the maximum input power increased under which the positive column did not constrict and the luminous flux improved by 70% at the xenon filling pressure of 6.7 kPa. It is proved that the positive voltage pulse application to the AEE with the amplitude of more than 2 kV expands the positive column in the radial direction. It is attributed to the phenomenon that the residual ions and electrons, which are generated by dielectric barrier discharge between the AEE and the anode during the falling edge of the negative pulse to the cathode, spread the discharge path from the anode towards the AEE during the cold cathode discharge mode. By increasing the xenon filling pressure, luminous efficacy was improved to 25 lm W{sup -1}.

  11. The Effect of Bias Voltage and Gas Pressure on the Structure, Adhesion and Wear Behavior of Diamond Like Carbon (DLC Coatings With Si Interlayers

    Directory of Open Access Journals (Sweden)

    Liam Ward

    2014-04-01

    Full Text Available In this study diamond like carbon (DLC coatings with Si interlayers were deposited on 316L stainless steel with varying gas pressure and substrate bias voltage using plasma enhanced chemical vapor deposition (PECVD technology. Coating and interlayer thickness values were determined using X-ray photoelectron spectroscopy (XPS which also revealed the presence of a gradient layer at the coating substrate interface. Coatings were evaluated in terms of the hardness, elastic modulus, wear behavior and adhesion. Deposition rate generally increased with increasing bias voltage and increasing gas pressure. At low working gas pressures, hardness and modulus of elasticity increased with increasing bias voltage. Reduced hardness and modulus of elasticity were observed at higher gas pressures. Increased adhesion was generally observed at lower bias voltages and higher gas pressures. All DLC coatings significantly improved the overall wear resistance of the base material. Lower wear rates were observed for coatings deposited with lower bias voltages. For coatings that showed wear tracks considerably deeper than the coating thickness but without spallation, the wear behavior was largely attributed to deformation of both the coating and substrate with some cracks at the wear track edges. This suggests that coatings deposited under certain conditions can exhibit ultra high flexible properties.

  12. Bias voltage dependence of molecular orientation of dialkyl ketone and fatty acid alkyl ester at the liquid–graphite interface

    Energy Technology Data Exchange (ETDEWEB)

    Hibino, Masahiro, E-mail: hibino@mmm.muroran-it.ac.jp [Department of Applied Sciences, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Tsuchiya, Hiroshi [Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

    2014-10-30

    Graphical abstract: - Highlights: • Self-assembled monolayers (SAMs) of 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) were formed on a graphite surface at the liquid–solid interface. • Orientations of the molecules in SAMs on the substrate were studied by scanning tunneling microscopy. • A perpendicular carbon skeleton-plane orientation with the CO pointing up on the surface is favorable for a substrate with negative charge and vice versa. - Abstract: Molecular orientations of self-assembled 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) monolayers adsorbed on a graphite surface were studied by scanning tunneling microscopy (STM) at the liquid–solid interface. At a positive sample bias, the central areas of the dialkyl ketone and fatty acid alkyl ester molecules in the STM images appeared as two bright regions on both sides of a dim spot and a bright region on one side of a dim spot, whereas at a negative sample bias, the areas appeared dim. This contrast variation indicates that a perpendicular carbon skeleton-plane orientation with the CO pointing down on the surface is favorable for a substrate with positive charge and vice versa because of the greater electronegativity of the oxygen atom. Upon the bias voltage reversal, the delay time for the STM image contrast change in the region was observed on a time scale of minutes. The difference between the delay time lengths for the direction of bias polarity change indicates that the perpendicular configuration with CO pointing up is more stable than that with CO pointing down. These results indicate that the use of an electric field along a direction vertical to the monolayer on the substrate provides control over the orientations of the molecules between two stable states at the liquid–solid interface.

  13. Wide-range bipolar pulse conductance instrument employing current and voltage modes with sampled or integrated signal acquisition

    Energy Technology Data Exchange (ETDEWEB)

    Calhoun, R K; Holler, F J [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry; Geiger, jr, R F; Nieman, T A [Illinois Univ., Urbana, IL (United States). Dept. of Chemistry; Caserta, K J [Procter and Gamble Co., Cincinnati, OH (United States)

    1991-11-05

    An instrument for measuring solution conductance using the bipolar pulse technique is described. The instrument is capable of measuring conductances in the range of 5x10{sup -9}-10{Omega}{sup -1} with 1% accuracy or better in as little as 32 {mu}s. Accuracy of 0.001-0.01% is achievable over the range 1x10{sup -6}-1{Omega}{sup -1}. Circuitry and software are described that allow the instrument to adjust automatically the pulse height, pulse duration, excitation mode (current or voltage pulse) and data acquisition mode (sampled or integrated) to acquire data of optimum accuracy and precision. The urease-catalyzed decomposition of urea is used to illustrate the versality of the instrument, and other applications are cited. (author). 60 refs.; 7 figs.; 2 tabs.

  14. Efficiency enhancement using voltage biasing for ferroelectric polarization in dye-sensitized solar cells

    Science.gov (United States)

    Kim, Sangmo; Song, Myoung Geun; Bark, Chung Wung

    2018-01-01

    Dye-sensitized solar cells (DSSCs) are one of the most promising third generation solar cells that have been extensively researched over the past decade as alternative to silicon-based solar cells, due to their low production cost and high energy-conversion efficiency. In general, a DSSC consists of a transparent electrode, a counter electrode, and an electrolyte such as dye. To achieve high power-conversion efficiency in cells, many research groups have focused their efforts on developing efficient dyes for liquid electrolytes. In this work, we report on the photovoltaic properties of DSSCs fabricated using a mixture of TiO2 with nanosized Fe-doped bismuth lanthanum titanate (nFe-BLT) powder). Firstly, nFe-BLT powders were prepared using a high-energy ball milling process and then, TiO2 and nFe-BLT powders were stoichiometrically blended. Direct current (DC) bias of 20 MV/m was applied to lab-made DSSCs. With the optimal concentration of nFe-BLT doped in the electrode, their light-to-electricity conversion efficiency could be improved by ∼64% compared with DSSCs where no DC bias was applied.

  15. Plasma surface treatment to improve surface charge accumulation and dissipation of epoxy resin exposed to DC and nanosecond-pulse voltages

    Science.gov (United States)

    Zhang, Cheng; Lin, Haofan; Zhang, Shuai; Xie, Qin; Ren, Chengyan; Shao, Tao

    2017-10-01

    In this paper, deposition by non-thermal plasma is used as a surface modification technique to change the surface characteristics of epoxy resin exposed to DC and nanosecond-pulse voltages. The corresponding surface characteristics in both cases of DC and nanosecond-pulse voltages before and after the modification are compared and investigated. The measurement of the surface potential provides the surface charge distribution, which is used to show the accumulation and dissipation process of the surface charges. Morphology observations, chemical composition and electrical parameters measurements are used to evaluate the treatment effects. The experimental results show that, before the plasma treatment, the accumulated surface charges in the case of the DC voltage are more than that in the case of the nanosecond-pulse voltage. Moreover, the decay rate of the surface charges for the DC voltage is higher than that for the nanosecond-pulse voltage. However, the decay rate is no more than 41% after 1800 s for both types of voltages. After the plasma treatment, the maximum surface potentials decrease to 57.33% and 32.57% of their values before treatment for the DC and nanosecond-pulse voltages, respectively, indicating a decrease in the accumulated surface charges. The decay rate exceeds 90% for both types of voltages. These changes are mainly attributed to a change in the surface nanostructure, an increase in conductivity, and a decrease in the depth of energy level.

  16. Plasma surface treatment to improve surface charge accumulation and dissipation of epoxy resin exposed to DC and nanosecond-pulse voltages

    International Nuclear Information System (INIS)

    Zhang, Cheng; Lin, Haofan; Zhang, Shuai; Ren, Chengyan; Shao, Tao; Xie, Qin

    2017-01-01

    In this paper, deposition by non-thermal plasma is used as a surface modification technique to change the surface characteristics of epoxy resin exposed to DC and nanosecond-pulse voltages. The corresponding surface characteristics in both cases of DC and nanosecond-pulse voltages before and after the modification are compared and investigated. The measurement of the surface potential provides the surface charge distribution, which is used to show the accumulation and dissipation process of the surface charges. Morphology observations, chemical composition and electrical parameters measurements are used to evaluate the treatment effects. The experimental results show that, before the plasma treatment, the accumulated surface charges in the case of the DC voltage are more than that in the case of the nanosecond-pulse voltage. Moreover, the decay rate of the surface charges for the DC voltage is higher than that for the nanosecond-pulse voltage. However, the decay rate is no more than 41% after 1800 s for both types of voltages. After the plasma treatment, the maximum surface potentials decrease to 57.33% and 32.57% of their values before treatment for the DC and nanosecond-pulse voltages, respectively, indicating a decrease in the accumulated surface charges. The decay rate exceeds 90% for both types of voltages. These changes are mainly attributed to a change in the surface nanostructure, an increase in conductivity, and a decrease in the depth of energy level. (paper)

  17. The pulse-driven AC Josephson voltage normal; Das pulsgetriebene AC-Josephson-Spannungsnormal

    Energy Technology Data Exchange (ETDEWEB)

    Kieler, Oliver [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany). Arbeitsgruppe 2.43 ' ' Josephson-Schaltungen' '

    2016-09-15

    In this contribution quantum precise alternating-voltage sources are presented, which make the generation of arbitrary wave forms with highest spectral purity with a high bandwidth from DC up to the MHz range possible. Heartpiece of these Josephson voltage normals is a serial circuit of many thousand Josephson contacts, which make by irradiation with high-frequency radiation (microwaves) the generation of highly precise voltage values possible. Thereby in the current-voltage characteristics stages of constant voltage, so called Shapiro stages, occur. Illustratively these stages can be described by the transfer of a certain number of flux quanta through the Josephson contacts.

  18. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  19. Development and application of network virtual instrument for emission spectrum of pulsed high-voltage direct current discharge

    Science.gov (United States)

    Gong, X.; Wu, Q.

    2017-12-01

    Network virtual instrument (VI) is a new development direction in current automated test. Based on LabVIEW, the software and hardware system of VI used for emission spectrum of pulsed high-voltage direct current (DC) discharge is developed and applied to investigate pulsed high-voltage DC discharge of nitrogen. By doing so, various functions are realized including real time collection of emission spectrum of nitrogen, monitoring operation state of instruments and real time analysis and processing of data. By using shared variables and DataSocket technology in LabVIEW, the network VI system based on field VI is established. The system can acquire the emission spectrum of nitrogen in the test site, monitor operation states of field instruments, realize real time face-to-face interchange of two sites, and analyze data in the far-end from the network terminal. By employing the network VI system, the staff in the two sites acquired the same emission spectrum of nitrogen and conducted the real time communication. By comparing with the previous results, it can be seen that the experimental data obtained by using the system are highly precise. This implies that the system shows reliable network stability and safety and satisfies the requirements for studying the emission spectrum of pulsed high-voltage discharge in high-precision fields or network terminals. The proposed architecture system is described and the target group gets the useful enlightenment in many fields including engineering remote users, specifically in control- and automation-related tasks.

  20. Triggering and guiding high-voltage large-scale leader discharges with sub-joule ultrashort laser pulses

    International Nuclear Information System (INIS)

    Pepin, H.; Comtois, D.; Vidal, F.; Chien, C.Y.; Desparois, A.; Johnston, T.W.; Kieffer, J.C.; La Fontaine, B.; Martin, F.; Rizk, F.A.M.; Potvin, C.; Couture, P.; Mercure, H.P.; Bondiou-Clergerie, A.; Lalande, P.; Gallimberti, I.

    2001-01-01

    The triggering and guiding of leader discharges using a plasma channel created by a sub-joule ultrashort laser pulse have been studied in a megavolt large-scale electrode configuration (3-7 m rod-plane air gap). By focusing the laser close to the positive rod electrode it has been possible, with a 400 mJ pulse, to trigger and guide leaders over distances of 3 m, to lower the leader inception voltage by 50%, and to increase the leader velocity by a factor of 10. The dynamics of the breakdown discharges with and without the laser pulse have been analyzed by means of a streak camera and of electric field and current probes. Numerical simulations have successfully reproduced many of the experimental results obtained with and without the presence of the laser plasma channel

  1. Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

    International Nuclear Information System (INIS)

    Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

    2012-01-01

    Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

  2. Window of cold nuclear fusion and biased-pulse electrolysis experiment

    International Nuclear Information System (INIS)

    Takahashi, Akito; Jida, Toshiyuki; Maekawa, Fujio; Sugimoto, Hisashi; Yoshida, Shigeo

    1989-01-01

    Based on the electron screening effect and the excitation of deuteron harmonic oscillators in palladium lattice, theoretical aspects are given to explain the cold fusion phenomena and the possibility of nuclear heating. A narrow window is proposed to meet ≅ 10 watts per cubic centimeter for the nuclear heating, by the hypothetical excitation-screening model. A relatively wide window is feasible to meet a few fusion events per second per cc under the non-stationary conditions of deuteron-charging and discharging. For stationary lattice conditions, the probability of cold fusion is not feasible at all. To confirm the cold fusion phenomena, a heavy water electrolysis experiment was carried out using biased-pulse-electrolytic currents, expecting the enhancement of cold fusion events under charging and discharging of deuterons. For the neutron detection, a cross-checking system between a recoil-proton scintillation detector and a 3 He thermal neutron detector was employed to see coincident time-patterns of neutron emission from an electrolysis cell. To check the energy of emitted neutrons, pulse height spectrum of the recoil-proton detector was monitored. Up to the D-charging time of 300 hr, neutron yields of 1-2 n/s/cc were obtained for time-intervals of 60-200 hr. From the recoil-proton spectra, it was confirmed that 2.45 MeV neutrons by the D(d, n) 3 He fusion branch were emitted. The observed time-patterns of neutron emission suggest the existence of cold fusion under the charging and discharging conditions. (orig.)

  3. Decomposition of three volatile organic compounds by nanosecond pulsed corona discharge: Study of by-product formation and influence of high voltage pulse parameters

    Science.gov (United States)

    Jarrige, Julien; Vervisch, Pierre

    2006-06-01

    Increasing concerns over atmospheric pollution has motivated research into technologies able to remove volatile organic compounds (VOC's) from gas streams. The aim of this paper is to understand the chemical and physical mechanisms implied in the decomposition of VOC's in a filamentary nonthermal plasma discharge. Experiments have been carried out on three pollutants (propane, propene, and isopropyl alcohol) in dry air at atmospheric pressure using a wire to cylinder corona discharge generated by a homemade nanosecond rise time high voltage pulse generator. The resulting plasma efficiently destructs propane, propene, or isopropyl alcohol at a concentration of 500 ppm with low specific input energies (less than 500 J/L), but the poor oxidation rate leads to the formation of numerous by-products (acetone, formaldehyde, formic acid, and methyl nitrate) whose concentration can reach some hundreds of ppm. We also investigated the effect of pulse parameters on VOC removal efficiency. Neither pulse peak value nor rise time (in the range of 4-12 ns) appears to have a significant influence on the VOC decomposition rates. Therefore, we believe that the way the energy is deposited in the plasma does not modify the density of active species (radicals, ions) in the streamers. The production of energetic electrons is not enhanced by the external applied field, and the only effective parameter may be the local field in the streamer head, which is almost the same (around 500 Td) whatever the voltage (above the inception value).

  4. Decomposition of three volatile organic compounds by nanosecond pulsed corona discharge: Study of by-product formation and influence of high voltage pulse parameters

    International Nuclear Information System (INIS)

    Jarrige, Julien; Vervisch, Pierre

    2006-01-01

    Increasing concerns over atmospheric pollution has motivated research into technologies able to remove volatile organic compounds (VOC's) from gas streams. The aim of this paper is to understand the chemical and physical mechanisms implied in the decomposition of VOC's in a filamentary nonthermal plasma discharge. Experiments have been carried out on three pollutants (propane, propene, and isopropyl alcohol) in dry air at atmospheric pressure using a wire to cylinder corona discharge generated by a homemade nanosecond rise time high voltage pulse generator. The resulting plasma efficiently destructs propane, propene, or isopropyl alcohol at a concentration of 500 ppm with low specific input energies (less than 500 J/L), but the poor oxidation rate leads to the formation of numerous by-products (acetone, formaldehyde, formic acid, and methyl nitrate) whose concentration can reach some hundreds of ppm. We also investigated the effect of pulse parameters on VOC removal efficiency. Neither pulse peak value nor rise time (in the range of 4-12 ns) appears to have a significant influence on the VOC decomposition rates. Therefore, we believe that the way the energy is deposited in the plasma does not modify the density of active species (radicals, ions) in the streamers. The production of energetic electrons is not enhanced by the external applied field, and the only effective parameter may be the local field in the streamer head, which is almost the same (around 500 Td) whatever the voltage (above the inception value)

  5. Nanosecond pulsed power generator for a voltage amplitude up to 300 kV and a repetition rate up to 16 Hz for fine disintegration of quartz

    Energy Technology Data Exchange (ETDEWEB)

    Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Sedin, A. A.; Tugushev, V. I. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

    2015-12-15

    A generator of high-power high-voltage nanosecond pulses is intended for electrical discharge disintegration of mineral quartz and other nonconducting minerals. It includes a 320 kV Marx pulsed voltage generator, a high-voltage glycerin-insulated coaxial peaking capacitor, and an output gas spark switch followed by a load, an electric discharge disintegration chamber. The main parameters of the generator are as follows: a voltage pulse amplitude of up to 300 kV, an output impedance of ≈10 Ω, a discharge current amplitude of up to 25 kA for a half-period of 80–90 ns, and a pulse repetition rate of up to 16 Hz.

  6. Nanosecond pulsed power generator for a voltage amplitude up to 300 kV and a repetition rate up to 16 Hz for fine disintegration of quartz

    International Nuclear Information System (INIS)

    Krastelev, E. G.; Sedin, A. A.; Tugushev, V. I.

    2015-01-01

    A generator of high-power high-voltage nanosecond pulses is intended for electrical discharge disintegration of mineral quartz and other nonconducting minerals. It includes a 320 kV Marx pulsed voltage generator, a high-voltage glycerin-insulated coaxial peaking capacitor, and an output gas spark switch followed by a load, an electric discharge disintegration chamber. The main parameters of the generator are as follows: a voltage pulse amplitude of up to 300 kV, an output impedance of ≈10 Ω, a discharge current amplitude of up to 25 kA for a half-period of 80–90 ns, and a pulse repetition rate of up to 16 Hz

  7. Model of 1/f noise in ion implanted resistors as a function of the resistance, determined by a reverse bias voltage

    International Nuclear Information System (INIS)

    Beck, H.G.E.

    1979-01-01

    A model is presented for the 1/f noise in ion-implanted resistors. The resistance was changed by a reverse bias voltage. The model explains the experimentally found square dependence between the relative 1/f noise intensity C/C 0 and the relative change in resistance R/R 0 . (author)

  8. Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

    International Nuclear Information System (INIS)

    Eslami, E.; Barjasteh, A.; Morshedian, N.

    2015-01-01

    In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown that applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap

  9. The Sterilization Effect of Cooperative Treatment of High Voltage Electrostatic Field and Variable Frequency Pulsed Electromagnetic Field on Heterotrophic Bacteria in Circulating Cooling Water

    Science.gov (United States)

    Gao, Xuetong; Liu, Zhian; Zhao, Judong

    2018-01-01

    Compared to other treatment of industrial circulating cooling water in the field of industrial water treatment, high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization technology, an advanced technology, is widely used because of its special characteristics--low energy consumption, nonpoisonous and environmentally friendly. In order to get a better cooling water sterilization effect under the premise of not polluting the environment, some experiments about sterilization of heterotrophic bacteria in industrial circulating cooling water by cooperative treatment of high voltage electrostatic field and variable frequency pulsed electromagnetic field were carried out. The comparison experiment on the sterilization effect of high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization on heterotrophic bacteria in industrial circulating cooling water was carried out by change electric field strength and pulse frequency. The results show that the bactericidal rate is selective to the frequency and output voltage, and the heterotrophic bacterium can only kill under the condition of sweep frequency range and output voltage. When the voltage of the high voltage power supply is 4000V, the pulse frequency is 1000Hz and the water temperature is 30°C, the sterilization rate is 48.7%, the sterilization rate is over 90%. Results of this study have important guiding significance for future application of magnetic field sterilization.

  10. High-voltage isolation transformer for sub-nanosecond rise time pulses constructed with annular parallel-strip transmission lines.

    Science.gov (United States)

    Homma, Akira

    2011-07-01

    A novel annular parallel-strip transmission line was devised to construct high-voltage high-speed pulse isolation transformers. The transmission lines can easily realize stable high-voltage operation and good impedance matching between primary and secondary circuits. The time constant for the step response of the transformer was calculated by introducing a simple low-frequency equivalent circuit model. Results show that the relation between the time constant and low-cut-off frequency of the transformer conforms to the theory of the general first-order linear time-invariant system. Results also show that the test transformer composed of the new transmission lines can transmit about 600 ps rise time pulses across the dc potential difference of more than 150 kV with insertion loss of -2.5 dB. The measured effective time constant of 12 ns agreed exactly with the theoretically predicted value. For practical applications involving the delivery of synchronized trigger signals to a dc high-voltage electron gun station, the transformer described in this paper exhibited advantages over methods using fiber optic cables for the signal transfer system. This transformer has no jitter or breakdown problems that invariably occur in active circuit components.

  11. Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

    Energy Technology Data Exchange (ETDEWEB)

    Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Popov, G. V.; Sedin, A. A.; Feduschak, V. F. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

    2016-12-15

    A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

  12. Isolated PWM DC-AC SICAM with an active capacitive voltage clamp[Pulse Density Modulated; Pulse Width Modulation

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2004-03-15

    In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of the audio signal. In order to solve the problem with the commutation of the load current, a dead time between the incoming and outgoing bidirectional switch is implemented, while a capacitive voltage clamp is used to keep the induced overvoltage to reasonable levels. The energy stored in the clamping capacitor is not wasted as in the dissipative clamps, but is rather transferred back to the primary side for further processing using an auxiliary isolated single-switch converter, i.e. an active clamping technique is used. (au)

  13. Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: a first-principles study

    DEFF Research Database (Denmark)

    Saha, Kamal K.; Blom, Anders; Thygesen, Kristian S.

    2012-01-01

    Using the nonequilibrium Green's function formalism combined with density functional theory, we study finite bias quantum transport in Ni/Grn/Ni vertical heterostructures where n graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that the recently predicted “pess...... differential resistance as the bias voltage is increased from Vb=0 V to Vb≃0.5 V. We confirm that both of these nonequilibrium transport effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers....... “pessimistic” magnetoresistance of 100% for n≥5 junctions at zero bias voltage Vb→0 persists up to Vb≃0.4 V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the n=5 junction exhibits a pronounced negative...

  14. Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

    International Nuclear Information System (INIS)

    Vladimir Popov

    2003-01-01

    A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

  15. Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

    Science.gov (United States)

    Stevons, C. E.; Jenke, P.; Briggs, M. S.

    2016-12-01

    Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

  16. Application of the voltage biased digital relay for the optimal protection of high inertia drive induction motors

    International Nuclear Information System (INIS)

    Choi, D. B.

    1999-01-01

    This paper describes typical protection schemes for large-size high inertia drive motor that are generally rotor thermal limited. Difficult and variable starting conditions of the large-size high inertia drive motor and compromises in the selection and setting of the protective devices are frequently encountered. The motors that typically encounter severe starting duty and present difficulties in achieving full motor protection are reactor coolant pumps (RCPs), blowers and compressors. For difficult starting conditions that are encountered by the large-size high inertia drive motors, state-of-the-art computer based calculations are capable of providing realistic predictions of the band of margin available for applying the protective relay. Based on the analysis of starting characteristics of large-size high inertia drive motors, this paper recommends that the optimal protection scheme for high inertia drive motors for nuclear power plants can be achieved by using the voltage biased digital relay instead of a speed switch and conventional overcurrent relays. (author)

  17. Voltage Stress on Y Capacitors from Indirect Lightning Pulses According to ED-14/DO-160

    Science.gov (United States)

    Meier, F.

    2012-05-01

    Transients due to lightning strikes on an aircraft's fuselage impose stress on the input filters of elec- tronic equipment. Permanent damage can occur when exceeding the voltage handling capacity of filter components causing a short circuit to ground. In ED-14/DO-160, section 22, a number of waveforms and levels are defined which are used to check the airworthiness of avionics equipment. Depending on pro- cedure and level, Y-capacitors are stressed by transient voltages which exceed their dielectric strength. The design engineer's task is a properly select the type and voltage rating of capacitors. With moderate simplifications, a LCR-series network is justified to calculate the peak voltage dependent on the capacitance.

  18. Modular High Voltage Pulse Converter for Short Rise and Decay Times

    NARCIS (Netherlands)

    Mao, S.

    2018-01-01

    This thesis explores a modular HV pulse converter technology with short rise and decay times. A systematic methodology to derive and classify HV architectures based on a modularization level of power building blocks of the HV pulse converter is developed to summarize existing architectures and

  19. Generation of fast-rise time, repetitive, (sub) nanosecond, high-voltage pulses

    NARCIS (Netherlands)

    Huiskamp, T.; Pemen, A.J.M.

    2017-01-01

    In this contribution we present our fast-rise time nanosecond pulse generator, capable of generating up to 50 kV (positive and negative) rectangular pulses at a repetition rate of up to 1 kHz and with a rise time of less than 200 picoseconds. We focus on the general concepts involved in the design

  20. Glow-to-arc transition events in H2-Ar direct current pulsed plasma: Automated measurement of current and voltage

    International Nuclear Information System (INIS)

    Mendes, Luciano A.; Rodrigues, Jhonatam C.; Mafra, Marcio

    2012-01-01

    The glow-to-arc transition phenomena (arcing) observed in plasma reactors used in materials processing was studied through the arcs characteristic current and voltage waveforms. In order to capture these arcs signals, a LABVIEW based automated instrumentation system (ARCVIEW) was developed, including the integration of an oscilloscope equipped with proper current and voltage probes. The system also allows capturing the process parameters at the arc occurrence moments, which were used to map the arcs events conditions. Experiments in H 2 -Ar DC pulsed plasma returned signals data from 215 arcs events, which were analyzed through software routines. According to the results, an anti-arcing system should react in the time order of few microseconds to prevent most of the damage caused by the undesired arcing phenomena.

  1. Effect of high-voltage pulsed electric field (HPEF pretreatment on biogas production rates of hybrid Pennisetum by anaerobic fermentation

    Directory of Open Access Journals (Sweden)

    Baijuan Wang

    2018-02-01

    Full Text Available In this paper, the raw materials of hybrid Pennisetum were pretreated in different conditions of high voltage pulsed electric field (HPEF to improve its material utilization ratios and biogas production rates of anaerobic fermentation. Then, anaerobic digestion experiments were conducted within 32 days at moderate temperature (35 °C with TS mass fraction (6%, inoculation rate (20% and initial pH (7.0. It is indicated that compared with the control group, 9 groups of hybrid Pennisetum pretreated by HPEF are obviously superior in gas production efficiency of anaerobic fermentation, and higher in cumulative gas production, peak daily gas production and maximum methane concentration; that the most remarkable stimulation occurs in the HPEF condition of 15 kV/120 Hz/60 min, in that situation, the cumulative gas production in the fermentation period of 32 days is up to 9587 mL, 26.95% higher than that of the control group, the peak daily gas production increases and the range of peak period extends. It is demonstrated that the optimal HPEF pretreatment time is 60 min and three HPEF parameters have a better effect on gas production in the order of voltage > time > frequency; and that the effect degree of treatment parameters on peak daily gas production is voltage, frequency and time in turn. It is concluded that HPEF can improve material utilization ratio and gas production rate of hybrid Pennisetum by anaerobic fermentation and shorten the gas production cycle. By virtue of this physical pretreatment method, the resource of Pennisetum is utilized sufficiently and the classes of energy plants are enlarged effectively. Keywords: Hybrid Pennisetum, Anaerobic fermentation, High voltage pulsed electric field (HPEF, Biogas, Material utilization ratio, Gas generation rate, Model, Stimulation

  2. The theory and implementation of a high quality pulse width modulated waveform synthesiser applicable to voltage FED inverters

    Science.gov (United States)

    Lower, Kim Nigel

    1985-03-01

    Modulation processes associated with the digital implementation of pulse width modulation (PWM) switching strategies were examined. A software package based on a portable turnkey structure is presented. Waveform synthesizer implementation techniques are reviewed. A three phase PWM waveform synthesizer for voltage fed inverters was realized. It is based on a constant carrier frequency of 18 kHz and a regular sample, single edge, asynchronous PWM switching scheme. With high carrier frequencies, it is possible to utilize simple switching strategies and as a consequence, many advantages are highlighted, emphasizing the importance to industrial and office markets.

  3. DC-pulsed voltage electrochemical method based on duty cycle self-control for producing TERS gold tips

    International Nuclear Information System (INIS)

    Vasilchenko, V E; Kharintsev, S S; Salakhov, M Kh

    2013-01-01

    This paper presents a modified dc-pulsed low voltage electrochemical method in which a duty cycle is self tuned while etching. A higher yield of gold tips suitable for performing tip-enhanced Raman scattering (TERS) measurements is demonstrated. The improvement is caused by the self-control of the etching rate along the full surface of the tip. A capability of the gold tips to enhance a Raman signal is exemplified by TERS spectroscopy of single walled carbon nanotubes bundle, sulfur and vanadium oxide

  4. Time-dependent flux from pulsed neutrons revealed by superconducting Nb current-biased kinetic inductance detector with "1"0B converter operated at 4 K

    International Nuclear Information System (INIS)

    Miyajima, Shigeyuki; Narukami, Yoshito; Shishido, Hiroaki; Yoshioka, Naohito; Ishida, Takekazu; Fujimaki, Akira; Hidaka, Mutsuo; Oikawa, Kenichi; Harada, Masahide; Oku, Takayuki; Arai, Masatoshi

    2015-01-01

    We have demonstrated a new superconducting detector for a neutron based on Nb superconductor meanderline with a "1"0B conversion layer. We use a current-biased kinetic inductance detector (CB-KID), which is composed of a meanderline, for detection of a neutron with high spatial resolution and fast response. The thickness of Nb meanderlines is 40 nm and widths are 3 μm, 1 μm, and 0.6 μm. The CB-KIDs are fabricated at the center of the Si chip of the size 22 mm × 22 mm and the total area of CB-KIDs covers 8 mm × 8 mm. The chip was cooled to a temperature lower than 4 K below the transition temperature of Nb using a Gifford-McMahon (GM) cryocooler. The Nb CB-KIDs with a "1"0B conversion layer output the voltage by irradiating pulsed neutrons at the material life science experimental facility (MLF) of Japan Proton Accelerator Research Complex (J-PARC) center. The response time of CB-KIDs is about a few tens ns. We have also obtained the time dependence of neutron flux generated from pulsed neutrons using a CB-KID. Experimental results were in good agreement with the simulated results. (author)

  5. Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

    2014-01-01

    The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

  6. Spatio-temporal imaging of voltage pulses with an ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Keil, Ulrich Dieter Felix; Hvam, Jørn Märcher

    1997-01-01

    Measurements on an ultrafast scanning tunneling microscope with simultaneous spatial and temporal resolution are presented. We show images of picosecond pulses propagating on a coplanar waveguide and resolve their mode structures. The influence of transmission line discontinuities on the mode...

  7. Reactive Power Compensation of a 24 MW Wind Farm using a 12-Pulse Voltage Source Converter

    DEFF Research Database (Denmark)

    Pedersen, Knud Ole Helgesen; Pedersen, Jørgen Kaas

    1998-01-01

    Integration of large wind farms in distribution and transmission systems may have severe influence on the power quality at the connection point and may also influence the voltage controlling capability of the electrical system. The purpose of the described project has been to develop and investig......Integration of large wind farms in distribution and transmission systems may have severe influence on the power quality at the connection point and may also influence the voltage controlling capability of the electrical system. The purpose of the described project has been to develop...... and investigate the use of a STATCOM by modelling and field testing an 8 MVar unit in a 24 MW wind farm....

  8. Boron doped bcc-W films: Achieving excellent mechanical properties and tribological performance by regulating substrate bias voltage

    Science.gov (United States)

    Yang, Lina; Zhang, Kan; Zeng, Yi; Wang, Xin; Du, Suxuan; Tao, Chuanying; Ren, Ping; Cui, Xiaoqiang; Wen, Mao

    2017-11-01

    Boron doped bcc-W (WBx, x = B/W) films were deposited on Si(100) substrates by magnetron co-sputtering pure W and B targets. Our results reveal that when the absolute value of substrate bias voltage (Vb) increases from floating to 240 V, the value of x monotonously decreases from 0.18 to 0.04, accompanied by a phase transition from a mixture of tetragonal γ-W2B and body-centered cubic α-W(B) phase (-Vb ≤ 60 V) to α-W(B) single phase (-Vb > 60 V). Hardness, depending on Vb, increases first and then drops, where the maximum hardness of 30.8 GPa was obtained at -Vb = 60 V and far higher than pure W and W2B theoretical value. In the mixed phase structure, the grain boundaries strengthening, Hall-Petch effect and solid-solution strengthening induced by B dominate the strengthening mechanism. Astonishingly, the film grown at -Vb = 120 V still possesses twice higher hardness than pure W, wherein unexpectedly low (6.7 at.%) B concentration and only the single α-W(B) phase can be identified. In this case, both Hall-Petch effect and solid-solution strengthening work. Besides, low friction coefficient of ∼0.18 can be obtained for the films with α-W(B) phase, which is competitive to that of reported B-rich transition-metal borides, such as TiB2, CrB and CrB2.

  9. Characterization of Wet Air Plasma Jet Powered by Sinusoidal High Voltage and Nanosecond Pulses for Plasma Agricultural Application

    Science.gov (United States)

    Takashima, Keisuke; Shimada, Keisuke; Konishi, Hideaki; Kaneko, Toshiro

    2015-09-01

    Not only for the plasma sterilization but also for many of plasma life-science applications, atmospheric pressure plasma devices that allowed us to control its state and reactive species production are deserved to resolve the roles of the chemical species. Influence of the hydroxyl radical and ozone on germination of conidia of a strawberry pathogen is presented. Water addition to air plasma jet significantly improves germination suppression performance, while measured reactive oxygen species (ROS) are reduced. Although the results show a negative correlation between ROS and the germination suppression, this infers the importance of chemical composition generated by plasma. For further control of the plasma product, a plasma jet powered by sinusoidal high voltage and nanosecond pulses is developed and characterized with the voltage-charge Lissajous. Control of breakdown phase and discharge power by pulse-imposed phase is presented. This work is supported by JSPS KAKENHI Grant-in-Aid for Young Scientists (B) Grant Number 15K17480 and Exploratory Research Grant Number 23644199.

  10. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi’an 710300 (China); Wang, Ye Feng [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Wang, Xue Qing [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China)

    2016-04-30

    Highlights: • PbSe thin film is deposited on FTO glass by a pulse voltage electrodeposition method. • The thin film is used as counter electrode (CE) in quantum dot-sensitized solar cell. • Superior electrocatalytic activity and stability in the polysulfide electrolyte is received. • The narrow band gap characteristics and p-type conductivity enhances the cell efficiency. • An efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells. - Abstract: Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  11. Reactive Power Compensation of a 24 MW Wind Farm using a 12-Pulse Voltage Source Converter

    DEFF Research Database (Denmark)

    Søbrink, K.H.; Pedersen, Jørgen Kaas; Pedersen, Knud Ole Helgesen

    1998-01-01

    Integration of large wind farms in distribution and transmission systems may have severe influence on the power quality at the connection point and may also influence the voltage controlling capability of the electrical system. The purpose of the described project has been to develop and investig...

  12. A distributed parameter model of transmission line transformer for high voltage nanosecond pulse generation.

    Science.gov (United States)

    Li, Jiangtao; Zhao, Zheng; Li, Longjie; He, Jiaxin; Li, Chenjie; Wang, Yifeng; Su, Can

    2017-09-01

    A transmission line transformer has potential advantages for nanosecond pulse generation including excellent frequency response and no leakage inductance. The wave propagation process in a secondary mode line is indispensable due to an obvious inside transient electromagnetic transition in this scenario. The equivalent model of the transmission line transformer is crucial for predicting the output waveform and evaluating the effects of magnetic cores on output performance. However, traditional lumped parameter models are not sufficient for nanosecond pulse generation due to the natural neglect of wave propagations in secondary mode lines based on a lumped parameter assumption. In this paper, a distributed parameter model of transmission line transformer was established to investigate wave propagation in the secondary mode line and its influential factors through theoretical analysis and experimental verification. The wave propagation discontinuity in the secondary mode line induced by magnetic cores is emphasized. Characteristics of the magnetic core under a nanosecond pulse were obtained by experiments. Distribution and formation of the secondary mode current were determined for revealing essential wave propagation processes in secondary mode lines. The output waveform and efficiency were found to be affected dramatically by wave propagation discontinuity in secondary mode lines induced by magnetic cores. The proposed distributed parameter model was proved more suitable for nanosecond pulse generation in aspects of secondary mode current, output efficiency, and output waveform. In depth, comprehension of underlying mechanisms and a broader view of the working principle of the transmission line transformer for nanosecond pulse generation can be obtained through this research.

  13. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    International Nuclear Information System (INIS)

    Sulaeman, M. Y.; Widita, R.

    2014-01-01

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation

  14. Recent progress in R&D for long pulse and ultra-high voltage components for the ITER HNB

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwagi, Mieko, E-mail: kashiwagi.mieko@jaea.go.jp; Umeda, Naotaka; Kojima, Atsushi; Yoshida, Masafumi; Tobari, Hiroyuki; Dairaku, Masayuki; Yamanaka, Haruhiko; Maejima, Tetsuya; Yamashita, Yasuo; Shibata, Naoki; Watanabe, Kazuhiro; Hanada, Masaya

    2015-10-15

    Highlights: • Long-pulse acceleration of MeV-class ion beams is demonstrated in JAEA. • The pulse length is extended from 0.4 s to 60 s, successfully. • R&D of 1 MV power supply is in progressed as scheduled. • Feasibility of 1 MV insulating transformer is confirmed in the mockup. - Abstract: Toward ITER, the long-pulse acceleration of MeV-class negative ion beams has been successfully demonstrated and R&Ds and the procurement of high-voltage components of 1 MV power supply system have been progressed. In the accelerator development after the production of 1 MeV beams, an extraction grid, where a water cooling is reinforced and the beam is steered by aperture offset to suppress grid heat loads, has been newly developed to extend the pulse duration of the MeV-class beams. As the result, a total grid heat load has been reduced from 20% to 10% of the total beam power. The beam pulse was successfully increased from 0.4 s to 60 s at 0.68 MeV, 100 A/m{sup 2} and 12 s at 0.89 MeV, 156 A/m{sup 2} beams. As for the procurement of the 1 MV power supply system, 1 MV insulating transformer as the critical component has been developed. In the mock-up, a dc 1.2 MV for 1 h with the margin of 20% was stably sustained. Through the R&Ds of the critical components, design of five power supplies procured by JAEA has been finalized, and out of which a testing power supply has been completed in June 2014.

  15. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Barquinha, P. M. C.; Martins, R. F. P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, B. [Holst Centre/TNO, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2016-02-29

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  16. [Degradation of p-nitrophenol by high voltage pulsed discharge and ozone processes].

    Science.gov (United States)

    Pan, Li-li; Yan, Guo-qi; Zheng, Fei-yan; Liang, Guo-wei; Fu, Jian-jun

    2005-11-01

    The vigorous oxidation by ozone and the high energy by pulsed discharge are utilized to degrade the big hazardous molecules. And these big hazardous molecules become small and less hazardous by this process in order to improve the biodegradability. When pH value is 8-9, the concentration of p-nitrophenol solution can be degraded by 96.8% and the degradation efficiency of TOC is 38.6% by ozone and pulsed discharge treatment for 30 mins. The comparison results show that the combination treatment efficiency is higher than the separate, so the combination of ozone and pulsed discharge has high synergism. It is approved that the phenyl degradation efficiency is high and the degradation efficiency of linear molecules is relative low.

  17. Enhanced Corrosion Resistance and Interfacial Conductivity of TiC x/a-C Nanolayered Coatings via Synergy of Substrate Bias Voltage for Bipolar Plates Applications in PEMFCs.

    Science.gov (United States)

    Yi, Peiyun; Zhang, Weixin; Bi, Feifei; Peng, Linfa; Lai, Xinmin

    2018-06-06

    Proton-exchange membrane fuel cells are one kind of renewable and clean energy conversion device, whose metallic bipolar plates are one of the key components. However, high interfacial contact resistance and poor corrosion resistance are still great challenges for the commercialization of metallic bipolar plates. In this study, we demonstrated a novel strategy for depositing TiC x /amorphous carbon (a-C) nanolayered coatings by synergy of 60 and 300 V bias voltage to enhance corrosion resistance and interfacial conductivity. The synergistic effects of bias voltage on the composition, microstructure, surface roughness, electrochemical corrosion behaviors, and interfacial conductivity of TiC x /a-C coatings were explored. The results revealed that the columnar structures in the inner layer were suppressed and the surface became rougher with the 300 V a-C layer outside. The composition analysis indicated that the sp 2 content increased with an increase of 300 V sputtering time. Due to the synergy strategy of bias voltage, lower corrosion current densities were achieved both in potentiostatic polarization (1.6 V vs standard hydrogen electrode) and potentiodynamic polarization. With the increase of 300 V sputtering time, the interfacial conductivity was improved. The enhanced corrosion resistance and interfacial conductivity of the TiC x /a-C coatings would provide new opportunities for commercial bipolar plates.

  18. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    Science.gov (United States)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  19. Effect of substrate bias voltage on tensile properties of single crystal silicon microstructure fully coated with plasma CVD diamond-like carbon film

    Science.gov (United States)

    Zhang, Wenlei; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2018-06-01

    Tensile strength and strength distribution in a microstructure of single crystal silicon (SCS) were improved significantly by coating the surface with a diamond-like carbon (DLC) film. To explore the influence of coating parameters and the mechanism of film fracture, SCS microstructure surfaces (120 × 4 × 5 μm3) were fully coated by plasma enhanced chemical vapor deposition (PECVD) of a DLC at five different bias voltages. After the depositions, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), thermal desorption spectrometry (TDS), surface profilometry, atomic force microscope (AFM) measurement, and nanoindentation methods were used to study the chemical and mechanical properties of the deposited DLC films. Tensile test indicated that the average strength of coated samples was 13.2-29.6% higher than that of the SCS sample, and samples fabricated with a -400 V bias voltage were strongest. The fracture toughness of the DLC film was the dominant factor in the observed tensile strength. Deviations in strength were reduced with increasingly negative bias voltage. The effect of residual stress on the tensile properties is discussed in detail.

  20. Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

    Science.gov (United States)

    Bait, L.; Azzouz, L.; Madaoui, N.; Saoula, N.

    2017-02-01

    The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to -100 V, on the structure and properties of the TiO2 thin films for biomaterials applications. The TiO2 films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O2 gas mixture. The variation of substrate bias voltage from 0 to -100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO2 films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = -100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0-50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO2 films deposited at -100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the study of the electrochemical properties. Comparison between the corrosion resistance of the uncoated and coated samples showed a reduction in corrosion current density for coated samples compared to the uncoated one. The best corrosion current density of the film deposited at -75 V was 5.9 nA/cm2, which is about 11 times less than that of the uncoated steel 68.3 nA/cm2). The

  1. Deposition of diamond-like carbon films by plasma source ion implantation with superposed pulse

    International Nuclear Information System (INIS)

    Baba, K.; Hatada, R.

    2003-01-01

    Diamond-like carbon (DLC) films were prepared on silicon wafer substrate by plasma source ion implantation with superposed negative pulse. Methane and acetylene gases were used as working gases for plasma. A negative DC voltage and a negative pulse voltage were superposed and applied to the substrate holder. The DC voltage was changed in the range from 0 to -4 kV and the pulse voltage was changed from 0 to -18 kV. The surface of DLC films was very smooth. The deposition rate of DLC films increased with increasing in superposed DC bias voltage. Carbon ion implantation was confirmed for the DLC film deposited from methane plasma with high pulse voltage. I D /I G ratios of Raman spectroscopy were around 1.5 independent on pulse voltage. The maximum hardness of 20.3 GPa was observed for the film prepared with high DC and high pulse voltage

  2. Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition

    International Nuclear Information System (INIS)

    Nakazawa, Hideki; Kamata, Ryosuke; Miura, Soushi; Okuno, Saori

    2013-01-01

    We have investigated the influence of the duty ratio of pulsed substrate bias on the structure and properties of Si-doped diamond-like carbon (Si-DLC) films deposited by radio frequency plasma-enhanced chemical vapor deposition using CH 4 , Ar, and monomethylsilane (CH 3 SiH 3 ) as the Si source. The Si/(Si + C) ratios in the Si-DLC films deposited using pulsed bias were higher than that of the dc-biased Si-DLC film, and the Si fraction increased with decreasing pulse duty ratio. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy analyses revealed that Si-C, Si-H n , and C-H n bonds in the Si-DLC films increased with decreasing duty ratio. The internal stress decreased as the duty ratio decreased, which is probably due to the increase in Si-C, Si-H n , and C-H n bonds in the films. The Si-DLC films deposited using pulsed bias had higher adhesion strength than the dc-biased Si-DLC film because of the further reduction of internal stress. At higher duty ratios, although the Si fractions of the pulse-biased Si-DLC films were higher than that of the dc-biased Si-DLC film, the wear rates of the former were less than that of the latter. - Highlights: • The internal stress of Si-doped films was lowered at lower duty ratios. • The adhesion of pulse-biased films was improved compared with that of dc films. • The tribological properties of Si-doped films were improved by the use of pulse bias

  3. Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation

    International Nuclear Information System (INIS)

    Kabyshev, A.V.; Konusov, F.V.; Lozhnikov, S.N.; Remnev, G.E.; Saltymakov, M.S.

    2009-01-01

    A singularities and advantages of the optical, photoelectric and electrical properties of GaAs in comparison with other available materials for electronics, for example, silicon allow to manufacture on it base the devices having an advanced characteristics. The GaAs for electronics, obtained from the dense ablation plasma, possess some preferences as compared to material manufactured by traditional methods of vacuum deposition. The electrical characteristics of GaAs produced by chemical deposition were extensively studied. Purpose of this work is investigation the current-voltage characteristics of thin films of GaAs, deposited on polycrystalline corundum (polycor) from plasma forming the power ions bunch and determination of the thermal vacuum annealing effect on photoelectric and electrical properties of films. Peculiarities of optical, photoelectric and current-voltage characteristics of films obtained by ions ablation are determined by deposition conditions and resistance of initial target GaAs. The transitions between the states with low- and high conduction were revealed directly after deposition in films having the optical properties similar to amorphous materials and/or after annealing in films with properties similar to initial target GaAs. Behavior of current-voltage characteristics at vacuum annealing correlates with Schottky barrier height and photosensitivity and is accompanies of the transport mechanism change. The stable properties of films are formed at its dark conduction 10 -10 -10 -8 s and after annealing at T an =600-700 K. (authors)

  4. Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

    Science.gov (United States)

    Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

    2006-07-01

    In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

  5. Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

    Energy Technology Data Exchange (ETDEWEB)

    Winands, G J J [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Liu, Z [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Pemen, A J M [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Heesch, E J M van [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Yan, K [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Veldhuizen, E M van [EPG Group, Department of Applied Physics, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands)

    2006-07-21

    In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh){sup -1}. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh){sup -1}, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

  6. Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

    International Nuclear Information System (INIS)

    Winands, G J J; Liu, Z; Pemen, A J M; Heesch, E J M van; Yan, K; Veldhuizen, E M van

    2006-01-01

    In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh) -1 . For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh) -1 , still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second

  7. Ozone and dinitrogen monoxide production in atmospheric pressure air dielectric barrier discharge plasma effluent generated by nanosecond pulse superimposed alternating current voltage

    Science.gov (United States)

    Takashima, Keisuke; Kaneko, Toshiro

    2017-06-01

    The effects of nanosecond pulse superposition to alternating current voltage (NS + AC) on the generation of an air dielectric barrier discharge (DBD) plasma and reactive species are experimentally studied, along with measurements of ozone (O3) and dinitrogen monoxide (N2O) in the exhausted gas through the air DBD plasma (air plasma effluent). The charge-voltage cycle measurement indicates that the role of nanosecond pulse superposition is to induce electrical charge transport and excess charge accumulation on the dielectric surface following the nanosecond pulses. The densities of O3 and N2O in NS + AC DBD are found to be significantly increased in the plasma effluent, compared to the sum of those densities generated in NS DBD and AC DBD operated individually. The production of O3 and N2O is modulated significantly by the phase in which the nanosecond pulse is superimposed. The density increase and modulation effects by the nanosecond pulse are found to correspond with the electrical charge transport and the excess electrical charge accumulation induced by the nanosecond pulse. It is suggested that the electrical charge transport by the nanosecond pulse might result in the enhancement of the nanosecond pulse current, which may lead to more efficient molecular dissociation, and the excess electrical charge accumulation induced by the nanosecond pulse increases the discharge coupling power which would enhance molecular dissociation.

  8. Influence of the parameters of supplying pulses and polarization voltage on the signal and shape of current characteristics of the electron capture detector

    International Nuclear Information System (INIS)

    Lasa, J.; Sliwka, I.; Drozdowicz, B.

    1989-01-01

    The paper contains results of measurements of current characteristics and of the signal for the constant concentration of freon F-11 of the ECD supplied with pulse voltage of changeable time of pulse duration t p , amplitude U 1 and the time of pulse repetition t r . In the course of measurements the detector worked at temperature 573 K with the additional constant polarization voltage. The polarization voltage has been observed to cause the effect of hypercoulometry. The presented mathematical analysis helps to determine the values of the coefficient of efficiency of electron capture p, the coefficient of electron loss k D , the coefficient of collecting of electric charges by the anode k' 3 and the coefficient of collecting of electric charges by the detector cathode k u . The coefficients are determined on the basis of experimental measurements. An attempt of physical interpretation of calculated values of these coefficients and their dependence on the parameters of the pulses supplying the detector has been presented. This interpretation requires the assumption that in some pulse periods t r the concentration of positive ions in the detector considerably exceeds concentration n 0 + = √a xα e /V, where a is an efficiency of the carrier gas ionization, α e is the coefficient of the electron-ion recombination and V is the detector volume. This statement helping to describe the effects observed in the electron capture polarized by voltage U a contradicts the recognized concept that the concentration of positive ions in the detector does not exceed the concentration n 0 + . The paper shows that the detector of the cylindrical construction, supplied with a pulse voltage can be used for coulometric measurements and the voltage polarizing the cathode can cause an effect of hypercoulometry. 33 figs., 9 refs. (author)

  9. Pulsed total dose damage effect experimental study on EPROM

    International Nuclear Information System (INIS)

    Luo Yinhong; Yao Zhibin; Zhang Fengqi; Guo Hongxia; Zhang Keying; Wang Yuanming; He Baoping

    2011-01-01

    Nowadays, memory radiation effect study mainly focus on functionality measurement. Measurable parameters is few in china. According to the present situation, threshold voltage testing method was presented on floating gate EPROM memory. Experimental study of pulsed total dose effect on EPROM threshold voltage was carried out. Damage mechanism was analysed The experiment results showed that memory cell threshold voltage negative shift was caused by pulsed total dose, memory cell threshold voltage shift is basically coincident under steady bias supply and no bias supply. (authors)

  10. Application in low level counting of corona counters operating in voltage or current pulse recording modes

    International Nuclear Information System (INIS)

    Oravec, J.; Usacev, S.; Duka-Zojomi, A.; Sitar, B.; Benovic, D.; Holy, K.

    1977-01-01

    The advantages of current or voltage modes of recording are discussed. It appears that the current mode is more advantageous in measurements of rare events caused by highly ionizing particles on a high background of weakly ionizing particles. A 2.3 litre multiwire corona counter was used for the determination of 226 Ra content in drinking water. The 226 Ra content was estimated by measuring 222 Rn activity. The minimum measurable activity of the system was 0.07 pCi/l of water. (author)

  11. Alternative Solder Bond Packaging Approach for High-Voltage (HV) Pulsed Power Devices

    Science.gov (United States)

    2016-09-01

    triggered into the ON-state with a fiber - optic transmitter once the capacitor has been charged up to the desired voltage of choice with a power supply...substrate, which results in a much higher conductivity compared to highly doped p-type substrates in SiC (Fig. 1). The anode layer was etched using...reactive ion etch and then the mesa of the device was etched for total isolation. The gate contact implant was followed using nitrogen in a box

  12. Mini biased collimated faraday cups for measurement of intense pulsed ion beams

    International Nuclear Information System (INIS)

    He Xiaoping; Shi Lei; Zhang Jiasheng; Qiu Aici

    2000-01-01

    An analysis of principle of a biased Faraday cup for measuring ion beams density and the main reasons related to the measuring accuracy were presented. An array of mini biased collimated Faraday cups was manufactured for the measurement of ion beam density of a compact 200 keV high power ion beam source. In the experiments the maximum density of ion beam was in the center of the beam, and it was about 170 A/cm 2

  13. Investigation of Peculiarities of a High-Voltage Pulsing Corona Discharge in Carbonic Gas and an Feature Using of Such Discharge for CO2 Dissociation

    International Nuclear Information System (INIS)

    Berezina, G.P.; Mirny, V.I.; Omelaenko, O.L.; Us, V.S.

    2006-01-01

    On laboratory stand of plasmochemical reactor the feature of CO 2 dissociation with the purpose of CO production in high-voltage pulsing corona discharge is investigated at a voltage up to 120 kV, a pulse length of a current 0,5 μs a repetition rate up to 100 Hz. Peculiarities of volt-ampere characteristics of such discharge are studied at different pressures of air and carbonic gas in the discharge chamber and construction of an interior electrode. It is established that in conditions of the carried out experiments a maximum efficiency of CO accretion does not exceed 3,5%

  14. A two-level voltage source inverter with differentially sinusoidal pulse width modulation used in the interconnection system of a wind turbine generator

    Directory of Open Access Journals (Sweden)

    Alexandros C. Charalampidis

    2014-10-01

    Full Text Available This study analyses an interconnection system based on differentially sinusoidal pulse width modulation, used for the interconnection to the grid of a variable speed wind turbine. The modulation technique used provides specific advantages in comparison with the commonly used sinusoidal pulse width modulation (SPWM technique, such as lower DC bus voltage requirements, smaller switching losses for the same switching frequency as well as less higher harmonic content in the voltage waveforms produced. The respective control system is also described in detail. Thus this study provides a guide enabling the design of any interconnection system based on this modulation technique.

  15. The formation of diffuse discharge by short-front nanosecond voltage pulses and the modification of dielectrics in this discharge

    Science.gov (United States)

    Orlovskii, V. M.; Panarin, V. A.; Shulepov, M. A.

    2014-07-01

    The dynamics of diffuse discharge formation under the action of nanosecond voltage pulses with short fronts (below 1 ns) in the absence of a source of additional preionization and the influence of a dielectric film on this process have been studied. It is established that the diffuse discharge is induced by the avalanche multiplication of charge initiated by high-energy electrons and then maintained due to secondary breakdowns propagating via ionized gas channels. If a dielectric film (polyethylene, Lavsan, etc.) is placed on the anode, then multiply repeated discharge will lead to surface and bulk modification of the film material. Discharge-treated polyethylene film exhibits a change in the optical absorption spectrum in the near-IR range.

  16. Conceptual design of pulsed high voltage and high precision power supply for a cyclotron auto-resonance maser (CARM) for plasma heating

    International Nuclear Information System (INIS)

    Zito, Pietro; Maffia, Giuseppe; Lampasi, Alessandro

    2015-01-01

    Highlights: • ENEA started a project to develop a cyclotron auto-resonance maser (CARM). • This facility requires an advanced pulsed high voltage power supply (HVPS). • The conceptual design answers to the performances requested for CARM HVPS. • The pulse transformer parameters were estimated according to IEEE standards. • PWM PID-based controller has been optimized to follow very fast rectangular pulses. - Abstract: Due to the high electron temperature during the plasma burning, both a higher power (>1 MW) and a higher frequency (up to 300 GHz) are required for plasma heating in future fusion experiments like DEMO. For this task, ENEA started a project to develop a cyclotron auto-resonance maser (CARM) able to produce an electron radiation in synchronism with the electromagnetic field and to transfer the electron beam kinetic energy to the plasma. This facility requires an advanced pulsed high voltage power supply (HVPS) with the following technical characteristics: variable output voltage up to 700 kV; variable pulse length in the range 5–50 μs; overshoot < 2%; rise time < 1 μs; voltage accuracy (including drop, ripple and stability) <0.1%. This paper describes the conceptual design and the technical solutions adopted to achieve the performance requested for the CARM HVPS.

  17. Conceptual design of pulsed high voltage and high precision power supply for a cyclotron auto-resonance maser (CARM) for plasma heating

    Energy Technology Data Exchange (ETDEWEB)

    Zito, Pietro, E-mail: pietro.zito@enea.it; Maffia, Giuseppe; Lampasi, Alessandro

    2015-10-15

    Highlights: • ENEA started a project to develop a cyclotron auto-resonance maser (CARM). • This facility requires an advanced pulsed high voltage power supply (HVPS). • The conceptual design answers to the performances requested for CARM HVPS. • The pulse transformer parameters were estimated according to IEEE standards. • PWM PID-based controller has been optimized to follow very fast rectangular pulses. - Abstract: Due to the high electron temperature during the plasma burning, both a higher power (>1 MW) and a higher frequency (up to 300 GHz) are required for plasma heating in future fusion experiments like DEMO. For this task, ENEA started a project to develop a cyclotron auto-resonance maser (CARM) able to produce an electron radiation in synchronism with the electromagnetic field and to transfer the electron beam kinetic energy to the plasma. This facility requires an advanced pulsed high voltage power supply (HVPS) with the following technical characteristics: variable output voltage up to 700 kV; variable pulse length in the range 5–50 μs; overshoot < 2%; rise time < 1 μs; voltage accuracy (including drop, ripple and stability) <0.1%. This paper describes the conceptual design and the technical solutions adopted to achieve the performance requested for the CARM HVPS.

  18. Hydrogen Permeation, and Mechanical and Tribological Behavior, of CrNx Coatings Deposited at Various Bias Voltages on IN718 by Direct Current Reactive Sputtering

    Directory of Open Access Journals (Sweden)

    Egor B. Kashkarov

    2018-02-01

    Full Text Available In the current work, the microstructure, hydrogen permeability, and properties of chromium nitride (CrNx thin films deposited on the Inconel 718 superalloy using direct current reactive sputtering are investigated. The influence of the substrate bias voltage on the crystal structure, mechanical, and tribological properties before and after hydrogen exposure was studied. It was found that increasing the substrate bias voltage leads to densification of the coating. X-ray diffraction (XRD results reveal a change from mixed fcc-CrN + hcp-Cr2N to the approximately stoichiometric hcp-Cr2N phase with increasing substrate bias confirmed by wavelength-dispersive X-ray spectroscopy (WDS. The texture coefficients of (113, (110, and (111 planes vary significantly with increasing substrate bias voltage. The hydrogen permeability was measured by gas-phase hydrogenation. The CrN coating deposited at 60 V with mixed c-CrN and (113 textured hcp-Cr2N phases exhibits the lowest hydrogen absorption at 873 K. It is suggested that the crystal orientation is only one parameter influencing the permeation resistance of the CrNx coating together with the film structure, the presence of mixing phases, and the packing density of the structure. After hydrogenation, the hardness increased for all coatings, which could be related to the formation of a Cr2O3 oxide film on the surface, as well as the defect formation after hydrogen loading. Tribological tests reveal that hydrogenation leads to a decrease of the friction coefficient by up to 40%. The lowest value of 0.25 ± 0.02 was reached for the CrNx coating deposited at 60 V after hydrogenation.

  19. Computer aided method of low voltage power distribution networks protection system against lightning and electromagnetic pulse generated by high altitude nuclear burst

    International Nuclear Information System (INIS)

    Laroubine, J.

    1989-01-01

    The lightning creates an electromagnetic field which produces a slow duration and high energy pulse of current on low voltage power distribution networks. On the other hand an high altitude nuclear burst generates an electromagnetic pulse which causes fast and intense interferences. We describe here the specifications of a passive filter that can reject these interferences. We used a computer aided method of simulation to create a prototype. Experimental results confirm the validity of the model used for simulation [fr

  20. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    Energy Technology Data Exchange (ETDEWEB)

    Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  1. The anti-biofouling behavior of high voltage pulse electric field (HPEF) mediated by carbon fiber composite coating in seawater.

    Science.gov (United States)

    Feng, Tiantian; Wu, Jinyi; Chai, Ke; Yang, Pengpeng

    2018-04-25

    One of the most important research areas in the marine industry is to investigate new and effective anti-biofouling technologies. In this study, high voltage pulse electric field (HPEF) mediated by carbon fiber (CF) composite coating was utilized to prevent the fouling of bacteria, microalgae and barnacle larvae in seawater. The plate count, 2, 3, 5-triphenyl-tetrazolium chloride (TTC) reduction assay and neutral red (NR) staining and larval motility detection showed that the inactivation rates were at the highest levels, which reached 99.1%, 99.9%, 99.7%, 98.7% and 85% respectively for Pseudomonas sp., Vibrio sp., iron bacteria, Navicula sp. and the second stage nauplii of Balanus reticulatus, under the HPEF with 19 kV pulse amplitude, 23.15 kHz frequency and 0.5 duty cycle. The field-emission scanning electron microscopy (FE-SEM) of Navicula sp. revealed that the HPEF brought about the cell lysis and the cell organic matter release on the coating, which could be the mechanism of the inactivation by the HPEF. Additionally, the FE-SEM and Raman spectroscopy indicated that the HPEF hardly damaged the coating. Copyright © 2018 Elsevier B.V. All rights reserved.

  2. Degradation of Dye Wastewater by Pulsed High-Voltage Discharge Combined with Spent Tea Leaves

    International Nuclear Information System (INIS)

    Liu Yan; Yang Li; Yang Gang; Zhang Yanzong; Zhang Xiaohong; Deng Shihuai

    2014-01-01

    Degradation of methylene blue (MB) was performed using the pulsed discharge process (PDP) combined with spent tea leaves (STLs). The effects of STL dosage, concentration of initial solution, and pH were analyzed in the combined treatment. Results showed that the combined treatment was effective for dye wastewater degradation; when the dosage of STLs was 3.2 g/L, the degradation efficiency reached 90% after 15 min treatment, and STLs showed a good repeatability. The degradation rate decreased with increasing initial MB concentration but not related to the solution pH in the combined treatment. Fourier-transform infrared spectra and N 2 adsorption suggested that the number of acidic and basic groups in the STL surface increased after the treatment, but the surface area and pore volume remained unchanged. (plasma technology)

  3. Transcranial low voltage pulsed electromagnetic fields in patients with treatment-resistant depression

    DEFF Research Database (Denmark)

    Martiny, Klaus Per Juul; Lunde, Marianne; Bech, Per

    2010-01-01

    BACKGROUND: Approximately 30% of patients with depression are resistant to antidepressant drugs. Repetitive transcranial magnetic stimulation (rTMS) has been found effective in combination with antidepressants in this patient group. The aim of this study was to evaluate the antidepressant effect...... of a new principle using low-intensity transcranially applied pulsed electromagnetic fields (T-PEMF) in combination with antidepressants in patients with treatment-resistant depression. METHODS: This was a sham-controlled double-blind study comparing 5 weeks of active or sham T-PEMF in patients...... with treatment-resistant major depression. The antidepressant treatment, to which patients had been resistant, was unchanged 4 weeks before and during the study period. Weekly assessments were performed using both clinician-rated and patient-rated scales. The T-PEMF equipment was designed as a helmet containing...

  4. Characterization of electron beams generated in a high-voltage pulse-line-driven pseudospark discharge

    International Nuclear Information System (INIS)

    Ramaswamy, K.; Destler, W.W.; Segalov, Z.; Rodgers, J.

    1994-01-01

    Emittance and energy measurements have been performed on a high-brightness electron beam (>10 10 A/m 2 rad 2 ) with diameter in the range 1--3 mm and energy in the range 150--170 keV. This electron beam is generated by the mating of a hollow-cathode discharge device operating in the pseudospark regime to the output of a high-power pulse line accelerator. The measured effective emittance lies in the range between 30 and 90 mm mrad and increases with axial distance. Electron energy measurements indicate that the high-energy electrons are generated during the first 20--30 ns of the discharge. Both the emittance and energy experiments were performed at two different ambient argon gas pressures (92 and 152 mtorr). Beam expansion as a function of axial position has also been studied and a lower bound on the beam brightness has been obtained

  5. Influence of a pulse duration of high-voltage supply on the efficiency of ozone synthesis in the 'needle-plane' electrode system

    International Nuclear Information System (INIS)

    Golota, V.I.; Zavada, L.M.; Karas, V.I.; Kotjukov, O.V.; Poliakov, O.V.; Pugach, S.G.

    2007-01-01

    We present the results of studies of the electrodynamic characteristics of a barrier less discharge with electrodes of the 'needle-plane' type and a high-voltage pulse of positive polarity, being applied to the edge electrode. The efficiency of ozone synthesis is determined as a function of the pulse duration and repetition rate. It is shown that the electrodynamic characteristics of the discharge and the effectiveness of ozone synthesis in oxygen-containing gas mixtures essentially depend on the parameters of the pulse supply

  6. Soft X-ray generation in gases by means of a pulsed electron beam produced in a high-voltage barier discharge

    NARCIS (Netherlands)

    Azarov, A.V.; Peters, P.J.M.; Boller, Klaus J.

    2007-01-01

    A large area pulsed electron beam is produced by a high-voltage barrier discharge. We compare the properties of the x-rays generated by stopping this beam of electrons in a thin metal foil with those generated by stopping the electrons directly in various gases. The generation of x-rays was

  7. Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kyuregyan, A. S., E-mail: ask@vei.ru [Lenin All-Russia Electrical Engineering Institute (Russian Federation)

    2015-07-15

    A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

  8. Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

    International Nuclear Information System (INIS)

    Kyuregyan, A. S.

    2015-01-01

    A simple analytical theory of the picosecond switching of high-voltage overloaded p + –i–n + photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs

  9. Influence of substrate bias voltage on the properties of TiO{sub 2} deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

    Energy Technology Data Exchange (ETDEWEB)

    Bait, L. [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria); Azzouz, L. [Université de Amar Telidji, Laghouat (Algeria); Madaoui, N. [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria); Saoula, N., E-mail: nsaoula@cdta.dz [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria)

    2017-02-15

    Highlights: • TiO{sub 2} films were deposited on stainless steel 304L RF magnetron sputtering at different substrate bias. • The hardness of TiO{sub 2} coated 304L are higher than those obtained for uncoated substrate. • TiO{sub 2} films provide good protection for stainless steel against corrosion in Ringer solution. - Abstract: The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to −100 V, on the structure and properties of the TiO{sub 2} thin films for biomaterials applications. The TiO{sub 2} films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O{sub 2} gas mixture. The variation of substrate bias voltage from 0 to −100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO{sub 2} films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = −100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0–50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO{sub 2} films deposited at −100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the

  10. Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

    International Nuclear Information System (INIS)

    Bait, L.; Azzouz, L.; Madaoui, N.; Saoula, N.

    2017-01-01

    Highlights: • TiO 2 films were deposited on stainless steel 304L RF magnetron sputtering at different substrate bias. • The hardness of TiO 2 coated 304L are higher than those obtained for uncoated substrate. • TiO 2 films provide good protection for stainless steel against corrosion in Ringer solution. - Abstract: The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to −100 V, on the structure and properties of the TiO 2 thin films for biomaterials applications. The TiO 2 films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O 2 gas mixture. The variation of substrate bias voltage from 0 to −100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO 2 films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = −100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0–50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO 2 films deposited at −100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the study of the electrochemical properties

  11. Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Liu Fei; Yang Sen; Zhou Dong; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed. (paper)

  12. Effects of bias voltage and annealing on the structure and mechanical properties of WC0.75N0.25 thin films

    International Nuclear Information System (INIS)

    Su, Y.D.; Hu, C.Q.; Wen, M.; Wang, C.; Liu, D.S.; Zheng, W.T.

    2009-01-01

    We investigated the effects of both bias voltage and annealing on the structure and mechanical properties of WC 0.75 N 0.25 thin films, deposited on Si (1 0 0) substrates by a direct current reactive magnetron sputtering system, in which the negative substrate bias voltage (V b ) was varied from floating (-1.6 V) to -200 V, and the deposited films were annealed at 800 deg. C for 2 h. The X-ray photoelectron spectroscopy and selected area electron diffraction analyses, along with the density-functional theory (DFT) calculations on the electronic structure, showed that WC 0.75 N 0.25 films were a single-phase of carbonitrides. After annealing, a significant decrease in hardness for the films was observed, being a result of point-defect annihilation as V b was in the range of floating to -120 V. However, when V b was in the range of -160 to -200 V, the hardness increased from ∼37 GPa for the as-deposited film to a maximum of ∼43 GPa for the annealed one. This increase in hardness after annealing might be attributed to age-hardening.

  13. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

    KAUST Repository

    Oh, Se Chung; Park, Seung Young; Manchon, Aurelien; Chshiev, Mairbek; Han, Jae Ho; Lee, Hyun Woo; Lee, Jang Eun; Nam, Kyung Tae; Jo, Younghun; Kong, Yo Chan; Dieny, Bernard; Lee, Kyung Jin

    2009-01-01

    Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

  14. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

    KAUST Repository

    Oh, Se Chung

    2009-10-25

    Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

  15. OH density measured by PLIF in a nanosecond atmospheric pressure diffuse discharge in humid air under steep high voltage pulses

    Science.gov (United States)

    Ouaras, K.; Magne, L.; Pasquiers, S.; Tardiveau, P.; Jeanney, P.; Bournonville, B.

    2018-04-01

    The spatiotemporal distributions of the OH radical density are measured using planar laser induced fluorescence in the afterglow of a nanosecond diffuse discharge at atmospheric pressure in humid air. The diffuse discharge is generated between a pin and a grounded plate electrodes within a gap of 18 mm. The high voltage pulse applied to the pin ranges from 65 to 85 kV with a rise time of 2 ns. The specific electrical energy transferred to the gas ranges from 5 to 40 J l‑1. The influence of H2O concentration is studied from 0.5% to 1.5%. An absolute calibration of OH density is performed using a six-level transient rate equation model to simulate the dynamics of OH excitation by the laser, taking into account collisional processes during the optical pumping and the fluorescence. Rayleigh scattering measurements are used to achieve the geometrical part of the calibration. A local maximum of OH density is found in the pin area whatever the operating conditions. For 85 kV and 1% of H2O, this peak reaches a value of 2.0 × 1016 cm‑3 corresponding to 8% of H2O dissociation. The temporal decay of the spatially averaged OH density is found to be similar as in the afterglow of a homogeneous photo-triggered discharge for which a self-consistent modeling is done. These tools are then used to bring discussion elements on OH kinetics.

  16. Investigation on a Novel Discontinuous Pulse-Width Modulation Algorithm for Single-phase Voltage Source Rectifier

    DEFF Research Database (Denmark)

    Qu, Hao; Yang, Xijun; Guo, Yougui

    2014-01-01

    Single-phase voltage source converter (VSC) is an important power electronic converter (PEC), including single-phase voltage source inverter (VSI), single-phase voltage source rectifier (VSR), single-phase active power filter (APF) and single-phase grid-connection inverter (GCI). Single-phase VSC...

  17. Hydrogenated amorphous silicon p–i–n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

    NARCIS (Netherlands)

    Wank, M.A.; Swaaij, van R.A.C.M.M.; Sanden, van de M.C.M.; Zeman, M.

    2012-01-01

    We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200¿°C and growth rates of about 1¿nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with increasing

  18. Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

    NARCIS (Netherlands)

    Wank, M. A.; van Swaaij, R.; R. van de Sanden,; Zeman, M.

    2012-01-01

    We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with

  19. A PC-PCL-based control system for the high-voltage pulsed-power operation of the Intense Diagnostic Neutral Beam (IDNB) Experiment

    International Nuclear Information System (INIS)

    Gribble, R.

    1993-06-01

    A stand-alone, semiautomated control system for the high-voltage pulsed-power energy sources on the Intense Diagnostic Neutral Beam Experiment at Los Alamos National Laboratory using personal computer (PC) and programmable logic controller (PLC) technology has been developed and implemented. The control system, consisting of a PC with the graphic operator interface, the network connecting the PC to the PLC, the PLC, the PLC I/O modules, fiber-optic interfaces and software, is described

  20. Design and measurements of a fast high-voltage pulse generator for the MedAustron Low Energy Transfer line fast deflector

    CERN Document Server

    Fowler, T; Mueller, F; Kramer, T; Stadlbauer, T

    2012-01-01

    MedAustron, a centre for ion-therapy and research, will comprise an accelerator facility based on a synchrotron for the delivery of protons and light ions for cancer treatment. The Low Energy Beam Transfer line (LEBT) to the synchrotron contains an electrostatic fast deflector (EFE) which, when energized, deviates the continuous beam arriving from the ion source onto a Faraday Cup: the specified voltage is ±3.5 kV. De-energizing the EFE for variable pulse durations from 500 ns up to d.c. allows beam passage for multi-turn injection into the synchrotron. To maintain beam quality in the synchrotron, the EFE pulse generator requires rise and fall times of less than 300 ns between 90 % of peak voltage and a ±1 V level. To achieve this, a pulsed power supply (PKF), with high voltage MOSFET switches connected in a push-pull configuration, will be mounted in close proximity to the deflector itself. A fast, large dynamic range monitoring circuit will verify switching to the ±1 V level and subsequent flat bottom pu...

  1. Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators.

    Science.gov (United States)

    Cheng, Xin-bing; Liu, Jin-liang; Qian, Bao-liang; Zhang, Yu; Zhang, Hong-bo

    2009-11-01

    A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

  2. Combined resonant tank capacitance and pulse frequency modulation control for ZCS-SR inverter-fed high voltage DC power supply

    International Nuclear Information System (INIS)

    Lee, S S; Iqbal, S; Kamarol, M

    2011-01-01

    Conventional pulse frequency modulated (PFM) zero current switching (ZCS) series resonant (SR) inverter fed high voltage dc power supplies have nearly zero switching loss. However, they have limitations of poor controllability at light loads and large output voltage ripple at low switching frequencies. To address these problems, this paper proposes a combined resonant tank capacitance and pulse frequency modulation based control approach. For the realization of the proposed control approach, the tank circuit of the resonant inverter is made up of several resonant capacitors that are switched into or out of the tank circuit by electromechanical switches. The output voltage of the converter is regulated by digitally modulating the resonant tank capacitance and narrowly varying the switching frequency. The proposed control scheme has several features, namely a wide range of controllability even at light loads, less output voltage ripple, and less current stress on the inverter's power switches at light loads. Therefore, the proposed control approach alleviates most of the problems associated with conventional PFM. Experimental results obtained from a scaled down laboratory prototype are presented to verify the effectiveness of the proposed system.

  3. Nanosecond pulsed electric fields depolarize transmembrane potential via voltage-gated K+, Ca2+ and TRPM8 channels in U87 glioblastoma cells.

    Science.gov (United States)

    Burke, Ryan C; Bardet, Sylvia M; Carr, Lynn; Romanenko, Sergii; Arnaud-Cormos, Delia; Leveque, Philippe; O'Connor, Rodney P

    2017-10-01

    Nanosecond pulsed electric fields (nsPEFs) have a variety of applications in the biomedical and biotechnology industries. Cancer treatment has been at the forefront of investigations thus far as nsPEFs permeabilize cellular and intracellular membranes leading to apoptosis and necrosis. nsPEFs may also influence ion channel gating and have the potential to modulate cell physiology without poration of the membrane. This phenomenon was explored using live cell imaging and a sensitive fluorescent probe of transmembrane voltage in the human glioblastoma cell line, U87 MG, known to express a number of voltage-gated ion channels. The specific ion channels involved in the nsPEF response were screened using a membrane potential imaging approach and a combination of pharmacological antagonists and ion substitutions. It was found that a single 10ns pulsed electric field of 34kV/cm depolarizes the transmembrane potential of cells by acting on specific voltage-sensitive ion channels; namely the voltage and Ca2 + gated BK potassium channel, L- and T-type calcium channels, and the TRPM8 transient receptor potential channel. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Influence of 60Co γ-ray irradiation and applied bias voltages on dielectric properties of Al/SiO2/p-Si (MIS) structures

    International Nuclear Information System (INIS)

    Tascioglu, I.; Uslu, H.; Aydemir, U.

    2010-01-01

    The MIS structures were exposed to 6 0Co γ-ray source at 5 kGy and radiation effect on dielectric properties has been investigated using admittance method (C-V and G/ω-V) by applying a small ac signal of 40 mV amplitude at 1 MHz and room temperature. The voltage dependent dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), electric modulus(M*) and ac electrical conductivity (σ a c) profiles show an intersection behavior about 1.6 V. The ε', ε'', tanδ and σ a c values decrease with increasing dose before intersection point after than they become increase. Such behavior can be explained on the basis of Maxwell-Wagner interfacial polarization and restructuring and reordering of interface states charges due to the effect of γ-ray irradiation. Also, the imaginer part of M* exhibits a peak. It is concluded that all these parameters of MIS structure are strongly dependent on the radiation dose and applied bias voltage especially in depletion region.

  5. Compact generator with semiconductor current interrupter, voltage to 300 kV and pulse repetition rate to 2 kHz

    International Nuclear Information System (INIS)

    Lyubutin, S.K.; Rukin, S.N.; Slovikovskij, B.G.

    2000-01-01

    Compact generator with a semiconductor current interrupter (SOS-diode), forming on the resistive load pulses with the amplitude up to 300 kV, duration from 30 up to 50 ns and the pulse sequence frequency 300 Hz by long operation and up to 2 kHz in the 30-second packet, is described. The generator contains a thyristor charge unit, magnetic compressor and inductive storage with a semiconductor current interrupter on the SOS-diode basis. The generator mean output capacity by the pulse maximum sequence frequency and 250 kV voltage equals 16 kw. The generator dimensions are 0.85 x 0.65 x 0.42 m, its mass equals approximately 115 kg [ru

  6. Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

    International Nuclear Information System (INIS)

    Tian Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2002-01-01

    Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment

  7. Pulsed corona generation using a diode-based pulsed power generator

    Science.gov (United States)

    Pemen, A. J. M.; Grekhov, I. V.; van Heesch, E. J. M.; Yan, K.; Nair, S. A.; Korotkov, S. V.

    2003-10-01

    Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great extent on the availability of reliable, efficient and repetitive high-voltage pulsed power technology. Heavy-duty opening switches are the most critical components in high-voltage pulsed power systems with inductive energy storage. At the Ioffe Institute, an unconventional switching mechanism has been found, based on the fast recovery process in a diode. This article discusses the application of such a "drift-step-recovery-diode" for pulsed corona plasma generation. The principle of the diode-based nanosecond high-voltage generator will be discussed. The generator will be coupled to a corona reactor via a transmission-line transformer. The advantages of this concept, such as easy voltage transformation, load matching, switch protection and easy coupling with a dc bias voltage, will be discussed. The developed circuit is tested at both a resistive load and various corona reactors. Methods to optimize the energy transfer to a corona reactor have been evaluated. The impedance matching between the pulse generator and corona reactor can be significantly improved by using a dc bias voltage. At good matching, the corona energy increases and less energy reflects back to the generator. Matching can also be slightly improved by increasing the temperature in the corona reactor. More effective is to reduce the reactor pressure.

  8. Temperature Dependency and Alpha Response of Semi-Insulating GaAs Schottky Radiation Detector at Low Bias Voltage

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Park, Se Hwan; Kim, Han Soo; Kim, Yong Kyun

    2009-01-01

    The last decade has seen a growing interest in semiconductor radiation detectors operated at room or nearly room temperature. Great efforts have been invested in the development of radiation detectors based on semi-insulating (SI) GaAs. The main reasons are as follows: (i) high resistance against radiation damage; (ii) it possesses a good energy resolution, which relates to its active volume; (iii) such a detector also exhibits fast signal rise times, which results from a high mobility and drift velocity of charge carriers; (iv) its large band gap energy allows a SI GaAs detector to operate at room temperature. Other important features are a good technology base and low production and operating costs. An alpha particle monitoring method for the detection of Pu-238 and U-235 is becoming important in homeland security. Alpha measurement in a vacuum is known to provide a good resolution sufficient to separate an isotope abundance in nuclear materials. However, in order to apply it to a high radiation field like a spent fuel treatment facility, a nuclear material loading and unloading process in a vacuum is one of the great disadvantages. Therefore, the main technical issue is to develop a detector for alpha detection at air condition and low power operation for integration type device. In this study we fabricated GaAs Schottky detector by using semi-insulating (SI) wafer and measured current-voltage characteristic curve and alpha response with 5.5 MeV Am-241 source

  9. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  10. Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

    Science.gov (United States)

    Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2018-03-14

    Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C 60 ). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C 60 features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C 60 with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in

  11. Energy Efficiency of Induction Motors Running Off Frequency Converters with Pulse-Width Voltage Modulation{sup 1}

    Energy Technology Data Exchange (ETDEWEB)

    Shvetsov, N. K., E-mail: elmash@em.ispu.ru [V. I. Lenin Ivanovo State Power University (Russian Federation)

    2016-11-15

    The results of calculations of the increase in losses in an induction motor with frequency control and different forms of the supply voltage are presented. The calculations were performed by an analytic method based on harmonic analysis of the supply voltage as well as numerical calculation of the electromagnetic processes by the finite-element method.

  12. Impact of pulsed-electric field and high-voltage electrical discharges on red wine microbial stabilization and quality characteristics.

    Science.gov (United States)

    Delsart, C; Grimi, N; Boussetta, N; Miot Sertier, C; Ghidossi, R; Vorobiev, E; Mietton Peuchot, M

    2016-01-01

    In this study, pulsed-electric fields (PEF) and high-voltage electrical discharges (HVED) are proposed as new techniques for the microbial stabilization of red wines before bottling. The efficiency of the treatment was then evaluated. PEF and HVED-treatments have been applied to wine for the inactivation of Oenococcus oeni CRBO 9304, O. oeni CRBO 0608, Pediococcus parvulus CRBO 2.6 and Brettanomyces bruxellensis CB28. Different treatment times (1, 2, 4, 6, 8 and 10 ms) were used at 20 kV cm(-1) for the PEF treatments and at 40 kV for the HVED treatments, which correspond to applied energies from 80 to 800 kJ l(-1) . The effects of the treatments on the microbial inactivation rate and on various characteristics of red wines (phenolic composition, chromatic characteristics and physico-chemical parameters) were measured. The application of PEF or HVED treatments on red wine allowed the inactivation of alteration yeasts (B. bruxellensis CB28) and bacteria (O. oeni CRBO 9304, O. oeni CRBO 0608 and P. parvulus CRBO 2.6). The electric discharges at 40 kV were less effective than the PEF even after 10 ms of treatments. Indeed, 4 ms of PEF treatment at 20 kV cm(-1) were sufficient to inactivate all micro-organisms present in the wines. Also, the use of PEF had no negative impact on the composition of wines compared to the HVED treatments. Contrary to PEF, the phenolics compounds were degraded after the HVED treatment and the physico-chemical composition of wine were modified with HVED. PEF technology seems to be an interesting alternative to stabilize microbiologically wines before bottling and without modifying their composition. This process offers many advantages for winemakers: no chemical inputs, low energy consumption (320 kJ l(-1) ), fast (treatment time of 4 ms) and athermal (ΔT ≈ 10°C). © 2015 The Society for Applied Microbiology.

  13. Pulsed-voltage atom probe tomography of low conductivity and insulator materials by application of ultrathin metallic coating on nanoscale specimen geometry.

    Science.gov (United States)

    Adineh, Vahid R; Marceau, Ross K W; Chen, Yu; Si, Kae J; Velkov, Tony; Cheng, Wenlong; Li, Jian; Fu, Jing

    2017-10-01

    We present a novel approach for analysis of low-conductivity and insulating materials with conventional pulsed-voltage atom probe tomography (APT), by incorporating an ultrathin metallic coating on focused ion beam prepared needle-shaped specimens. Finite element electrostatic simulations of coated atom probe specimens were performed, which suggest remarkable improvement in uniform voltage distribution and subsequent field evaporation of the insulated samples with a metallic coating of approximately 10nm thickness. Using design of experiment technique, an experimental investigation was performed to study physical vapor deposition coating of needle specimens with end tip radii less than 100nm. The final geometries of the coated APT specimens were characterized with high-resolution scanning electron microscopy and transmission electron microscopy, and an empirical model was proposed to determine the optimal coating thickness for a given specimen size. The optimal coating strategy was applied to APT specimens of resin embedded Au nanospheres. Results demonstrate that the optimal coating strategy allows unique pulsed-voltage atom probe analysis and 3D imaging of biological and insulated samples. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. The effect of the shape of single, sub-ms voltage pulses on the rates of surface immobilization and hybridization of DNA

    International Nuclear Information System (INIS)

    Cabeca, R; Rodrigues, M; Chu, V; Conde, J P; Prazeres, D M F

    2009-01-01

    Electric fields generated by single square and sinusoidal voltage pulses with amplitudes below 2 V were used to assist the covalent immobilization of single-stranded, thiolated DNA probes, onto a chemically functionalized SiO 2 surface and to assist the specific hybridization of single-stranded DNA targets with immobilized complementary probes. The single-stranded immobilized DNA probes were either covalently immobilized (chemisorption) or electrostatically adsorbed (physisorption) to a chemically functionalized surface. Comparing the speed of electric field assisted immobilization and hybridization with the corresponding control reactions (without electric field), an increase of several orders of magnitude is observed, with the reaction timescaled down from 1 to 2 h to a range between 100 ns and 1 ms. The influence of the shape of the voltage pulse (square versus sinusoidal) and its duration were studied for both immobilization and hybridization reactions. The results show that pulsed electric fields are a useful tool to achieve temporal and spatial control of surface immobilization and hybridization reactions of DNA.

  15. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  16. A novel MR-compatible sensor to assess active medical device safety: stimulation monitoring, rectified radio frequency pulses, and gradient-induced voltage measurements.

    Science.gov (United States)

    Barbier, Thérèse; Aissani, Sarra; Weber, Nicolas; Pasquier, Cédric; Felblinger, Jacques

    2018-03-30

    To evaluate the function of an active implantable medical device (AIMD) during magnetic resonance imaging (MRI) scans. The induced voltages caused by the switching of magnetic field gradients and rectified radio frequency (RF) pulse were measured, along with the AIMD stimulations. An MRI-compatible voltage probe with a bandwidth of 0-40 kHz was designed. Measurements were carried out both on the bench with an overvoltage protection circuit commonly used for AIMD and with a pacemaker during MRI scans on a 1.5 T (64 MHz) MR scanner. The sensor exhibits a measurement range of ± 15 V with an amplitude resolution of 7 mV and a temporal resolution of 10 µs. Rectification was measured on the bench with the overvoltage protection circuit. Linear proportionality was confirmed between the induced voltage and the magnetic field gradient slew rate. The pacemaker pacing was recorded successfully during MRI scans. The characteristics of this low-frequency voltage probe allow its use with extreme RF transmission power and magnetic field gradient positioning for MR safety test of AIMD during MRI scans.

  17. The recombination correction and the dependence of the response of plane parallel chambers on the polarizing voltage in pulsed electron and photon beams

    International Nuclear Information System (INIS)

    Roos, M.; Derikum, K.

    2000-01-01

    Based on an experimental investigation of the recombination effect in plane parallel chambers, a relation is deduced that allows the correction to be calculated from the electrode spacing and from the dose per pulse. It is shown that the uncertainties caused by the application of the Boag formula for volume recombination (recommended in the International Code of Practice TRS-381) amount to not more than about 0.1% for conventional beams. Calculated recombinations are compared with experimental results concerning the dependence of the response of various commercial plane parallel chambers on the polarizing voltage. Since it cannot be excluded that particular chambers collect a non-negligible amount of charge from regions outside the designated collecting volume or that the effective polarizing voltage is reduced by poor contacts, it seems advisable to experimentally check the chambers before use and before application of the analytical relations. (author)

  18. Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

    International Nuclear Information System (INIS)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

    2014-01-01

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

  19. Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

    International Nuclear Information System (INIS)

    Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

    2007-01-01

    The dependence of Si 3 N 4 etch rates and the etch selectivity of SiO 2 to Si 3 N 4 on ion-incident angles was studied for different bias voltages in a high-density C 4 F 8 plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si 3 N 4 etching, but it increased with the bias voltage in SiO 2 etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si 3 N 4 etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO 2 than for Si 3 N 4 and, consequently, the etch selectivity of SiO 2 to Si 3 N 4 decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO 2 had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF x ) film formed on the substrates

  20. Spin-polarization and spin-flip in a triple-quantum-dot ring by using tunable lateral bias voltage and Rashba spin-orbit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Molavi, Mohamad, E-mail: Mo_molavi@yahoo.com [Faculty of Physics, Kharazmi University, Tehran (Iran, Islamic Republic of); Faizabadi, Edris, E-mail: Edris@iust.ac.ir [School of Physics, Iran University of Science and Technology, 16846 Tehran (Iran, Islamic Republic of)

    2017-04-15

    By using the Green's function formalism, we investigate the effects of single particle energy levels of a quantum dot on the spin-dependent transmission properties through a triple-quantum-dot ring structure. In this structure, one of the quantum dots has been regarded to be non-magnetic and the Rashba spin-orbit interaction is imposed locally on this dot while the two others can be magnetic. The on-site energy of dots, manipulates the interference of the electron spinors that are transmitted to output leads. Our results show that the effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots, which is applicable by a controllable lateral bias voltage externally. Besides, by tuning the parameters such as Rashba spin-orbit interaction, and on-site energy of dots and magnetic flux inside the ring, the structure can be indicated the spin-flip effect and behave as a full spin polarizer or splitter. - Highlights: • The effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots. • In the situation that the QDs have non-zero on-site energies, the system can demonstrate the full spin-polarization. • By tuning the Rashba spin-orbit strength and magnetic flux encountered by the ring the system operates as a Stern-Gerlach apparatus.

  1. THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

    Directory of Open Access Journals (Sweden)

    Peter Hornak

    2017-12-01

    Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

  2. The effect of pulse voltage and capacitance on biosorption of uranium by biomass derived from whiskey distillery spent wash

    Energy Technology Data Exchange (ETDEWEB)

    Bustard, M.; Rollan, A.; McHale, A.P. [Biotechnology Research Group, School of Applied Biological and Chemical Sciences, University of Ulster (United Kingdom)

    1999-01-01

    Biosorption of uranium by residual biomass from The Old Bushmill`s Distillery Co. Ltd., Bushmills, Co. Antrim, Northern Ireland, following exposure to short and intense electric pulses has been examined. The biomass was prepared from the distillery spent wash and consisted of non-viable yeast and bacterial cells. As shown previously, untreated biomass had a maximum biosorption capacity of 170 mg uranium/g dry weight biomass. When biosorption reactions were placed between two electrodes and exposed to electric pulses with field strengths ranging from 1.25-3.25 kV/cm at a capacitance of 25 {mu}F, biosorption increased from 170 mg of uranium to 275 mg uranium/g dry weight biomass. The data were obtained from biosorption isotherm analyses and taken as the degree of biosorption at residual uranium concentrations of 3 mM. In addition, when the capacitance of the electric pulses increased from 0.25 {mu}F to 25 {mu}F at a fixed pulse field strength the degree of biosorption increased from 210 mg uranium to 240 mg uranium/g dry weight biomass. The results suggest that application of short and intense electric pulses to biosorption reactions may play an important role in enhancing microbial biosorption of toxic metals/radionuclides from waste water streams. (orig.) With 2 tabs., 10 refs.

  3. Differential-output B-dot and D-dot monitors for current and voltage measurements on a 20-MA, 3-MV pulsed-power accelerator

    Directory of Open Access Journals (Sweden)

    T. C. Wagoner

    2008-10-01

    Full Text Available We have developed a system of differential-output monitors that diagnose current and voltage in the vacuum section of a 20-MA 3-MV pulsed-power accelerator. The system includes 62 gauges: 3 current and 6 voltage monitors that are fielded on each of the accelerator’s 4 vacuum-insulator stacks, 6 current monitors on each of the accelerator’s 4 outer magnetically insulated transmission lines (MITLs, and 2 current monitors on the accelerator’s inner MITL. The inner-MITL monitors are located 6 cm from the axis of the load. Each of the stack and outer-MITL current monitors comprises two separate B-dot sensors, each of which consists of four 3-mm-diameter wire loops wound in series. The two sensors are separately located within adjacent cavities machined out of a single piece of copper. The high electrical conductivity of copper minimizes penetration of magnetic flux into the cavity walls, which minimizes changes in the sensitivity of the sensors on the 100-ns time scale of the accelerator’s power pulse. A model of flux penetration has been developed and is used to correct (to first order the B-dot signals for the penetration that does occur. The two sensors are designed to produce signals with opposite polarities; hence, each current monitor may be regarded as a single detector with differential outputs. Common-mode-noise rejection is achieved by combining these signals in a 50-Ω balun. The signal cables that connect the B-dot monitors to the balun are chosen to provide reasonable bandwidth and acceptable levels of Compton drive in the bremsstrahlung field of the accelerator. A single 50-Ω cable transmits the output signal of each balun to a double-wall screen room, where the signals are attenuated, digitized (0.5-ns/sample, numerically compensated for cable losses, and numerically integrated. By contrast, each inner-MITL current monitor contains only a single B-dot sensor. These monitors are fielded in opposite-polarity pairs. The two

  4. Differential B-dot and D-dot monitors for current and voltage measurements on a 20-MA 3-MV pulsed-power accelerator

    International Nuclear Information System (INIS)

    Shoup, Roy Willlam; Gilliland, Terrance Leo; Lee, James R.; Speas, Christopher Shane; Kim, Alexandre A.; Struve, Kenneth William; York, Mathew William; Leifeste, Gordon T.; Rochau, Gregory Alan; Sharpe, Arthur William; Stygar, William A.; Porter, John Larry Jr.; Wagoner, Tim C.; Reynolds, Paul Gerard; Slopek, Jeffrey Scott; Moore, William B.S.; Dinwoodie, Thomas Albert; Woodring, R.M.; Broyles, Robin Scott; Mills, Jerry Alan; Melville, J.A.; Dudley, M.E.; Androlewicz, K.E.; Mourning, R.W.; Moore, J.K.; Serrano, Jason Dimitri; Ives, H.C.; Johnson, M.F.; Peyton, B.P.; Leeper, Ramon Joe; Savage, Mark Edward; Donovan, Guy Louis; Spielman, R.B.; Seamen, Johann F.

    2007-01-01

    We have developed a system of differential-output monitors that diagnose current and voltage in the vacuum section of a 20-MA 3-MV pulsed-power accelerator. The system includes 62 gauges: 3 current and 6 voltage monitors that are fielded on each of the accelerator's 4 vacuum-insulator stacks, 6 current monitors on each of the accelerator's 4 outer magnetically insulated transmission lines (MITLs), and 2 current monitors on the accelerator's inner MITL. The inner-MITL monitors are located 6 cm from the axis of the load. Each of the stack and outer-MITL current monitors comprises two separate B-dot sensors, each of which consists of four 3-mm-diameter wire loops wound in series. The two sensors are separately located within adjacent cavities machined out of a single piece of copper. The high electrical conductivity of copper minimizes penetration of magnetic flux into the cavity walls, which minimizes changes in the sensitivity of the sensors on the 100-ns time scale of the accelerator's power pulse. A model of flux penetration has been developed and is used to correct (to first order) the B-dot signals for the penetration that does occur. The two sensors are designed to produce signals with opposite polarities; hence, each current monitor may be regarded as a single detector with differential outputs. Common-mode-noise rejection is achieved by combining these signals in a 50-(Omega) balun. The signal cables that connect the B-dot monitors to the balun are chosen to provide reasonable bandwidth and acceptable levels of Compton drive in the bremsstrahlung field of the accelerator. A single 50-ω cable transmits the output signal of each balun to a double-wall screen room, where the signals are attenuated, digitized (0.5-ns/sample), numerically compensated for cable losses, and numerically integrated. By contrast, each inner-MITL current monitor contains only a single B-dot sensor. These monitors are fielded in opposite-polarity pairs. The two signals from a pair are

  5. Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

    International Nuclear Information System (INIS)

    Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

    2014-01-01

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V bias ) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V bias for Ga 0.51 In 0.49 P/Ga 0.99 In 0.01 As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V bias measurements. The profile of SR−V bias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell

  6. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Sogabe, Tomah, E-mail: Sogabe@mbe.rcast.u-tokyo.ac.jp; Ogura, Akio; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan)

    2014-02-21

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

  7. Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

    1997-01-01

    Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

  8. Oxidation of S(IV) in Seawater by Pulsed High Voltage Discharge Plasma with TiO2/Ti Electrode as Catalyst

    Science.gov (United States)

    Gong, Jianying; Zhang, Xingwang; Wang, Xiaoping; Lei, Lecheng

    2013-12-01

    Oxidation of S(IV) to S(VI) in the effluent of a flue gas desulfurization(FGD) system is very critical for industrial applications of seawater FGD. This paper reports a pulsed corona discharge oxidation process combined with a TiO2 photocatalyst to convert S(IV) to S(VI) in artificial seawater. Experimental results show that the oxidation of S(IV) in artificial seawater is enhanced in the pulsed discharge plasma process through the application of TiO2 coating electrodes. The oxidation rate of S(IV) using Ti metal as a ground electrode is about 2.0×10-4 mol · L-1 · min-1, the oxidation rate using TiO2/Ti electrode prepared by annealing at 500°C in air is 4.5×10-4 mol · L-1 · min-1, an increase with a factor 2.25. The annealing temperature for preparing TiO2/Ti electrode has a strong effect on the oxidation of S(IV) in artificial seawater. The results of in-situ emission spectroscopic analysis show that chemically active species (i.e. hydroxyl radicals and oxygen radicals) are produced in the pulsed discharge plasma process. Compared with the traditional air oxidation process and the sole plasma-induced oxidation process, the combined application of TiO2 photocatalysts and a pulsed high-voltage electrical discharge process is useful in enhancing the energy and conversion efficiency of S(IV) for the seawater FGD system.

  9. Experiments investigating the effects of the accelerating gap voltage pulse on the ion focused (IFR) high current electron recirculators

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.; Wagner, J.S.; Bennett, L.F.; Olson, W.R.; Turman, B.N.; Prestwich, K.R.; Wells, J.

    1991-01-01

    The lifetime of the Ion Focusing Regime (IFR) channel following the pulsing of the post-accelerating gaps is critical for an open-ended, spiral recirculating electron linear accelerator. It dictates the number of allowable beam recirculations through the gap. In the case of a racetrack configuration, it is significant but not as critical, since the presence of the electron beam focuses the ions and lengthens the lifetime of the ion channel. It was established that pulsing the accelerating gap perturbs the IFR channel. However, for the parameters studied, the lifetime is long enough to allow at least four beam recirculations in a spiral device. In addition, cusp fields positioned upstream and downstream from the gap prevent it from perturbing the IFR channel. 4 refs., 5 figs., 1 tab

  10. Experiments investigating the effects of the accelerating gap voltage pulse on the ion focused (IFR) high current electron recirculators

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.; Wagner, J.S.; Bennett, L.F.; Olson, W.R. Turnman, B.N.; Prestwich, K.R.; Wells, J.

    1991-01-01

    The lifetime of the Ion Focusing Regime (IFR) channel following the pulsing of the post-accelerating gaps is critical for an open-ended, spiral recirculating electron linear accelerator. It dictates the number of allowable beam recirculations through the gap. In the case of a racetrack configuration, its is significant but not as critical, since the presence of the electron beam focuses the ions and lengthens the lifetime of the ion channel. It was established that pulsing the accelerating gap perturbs the IFR channel. However, for the parameters studied, the lifetime is long enough to allow at least four beam recirculations in a spiral device. In addition, cusp fields positioned upstream and downstream from the gap prevent it from perturbing the IFR channel

  11. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  12. Rapid formation of electric field profiles in repetitively pulsed high-voltage high-pressure nanosecond discharges

    International Nuclear Information System (INIS)

    Ito, Tsuyohito; Kobayashi, Kazunobu; Hamaguchi, Satoshi; Czarnetzki, Uwe

    2010-01-01

    Rapid formation of electric field profiles has been observed directly for the first time in nanosecond narrow-gap parallel-plate discharges at near-atmospheric pressure. The plasmas examined here are of hydrogen, and the field measurement is based on coherent Raman scattering (CRS) by hydrogen molecules. Combined with the observation of spatio-temporal light emission profiles by a high speed camera, it has been found that the rapid formation of a high-voltage thin cathode sheath is accompanied by fast propagation of an ionization front from a region near the anode. Unlike well-known parallel-plate discharges at low pressure, the discharge formation process at high pressure is almost entirely driven by electron dynamics as ions and neutral species are nearly immobile during the rapid process. (fast track communication)

  13. Biasing of Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

    2017-02-01

    Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

  14. Silicon oxide barrier films deposited on PET foils in pulsed plasmas: influence of substrate bias on deposition process and film properties

    International Nuclear Information System (INIS)

    Steves, S; Bibinov, N; Awakowicz, P; Ozkaya, B; Liu, C-N; Ozcan, O; Grundmeier, G

    2013-01-01

    A widely used plastic for packaging, polyethylene terephtalate (PET) offers limited barrier properties against gas permeation. For many applications of PET (from food packaging to micro electronics) improved barrier properties are essential. A silicon oxide barrier coating of PET foils is applied by means of a pulsed microwave driven low-pressure plasma. While the adjustment of the microwave power allows for a control of the ion production during the plasma pulse, a substrate bias controls the energy of ions impinging on the substrate. Detailed analysis of deposited films applying oxygen permeation measurements, x-ray photoelectron spectroscopy and atomic force microscopy are correlated with results from plasma diagnostics describing the deposition process. The influence of a change in process parameters such as gas mixture and substrate bias on the gas temperature, electron density, mean electron energy, ion energy and the atomic oxygen density is studied. An additional substrate bias results in an increase in atomic oxygen density up to a factor of 6, although plasma parameter such as electron density of n e = 3.8 ± 0.8 × 10 17 m −3 and electron temperature of k B T e = 1.7 ± 0.1 eV are unmodified. It is shown that atomic oxygen densities measured during deposition process higher than n O = 1.8 × 10 21 m −3 yield in barrier films with a barrier improvement factor up to 150. Good barrier films are highly cross-linked and show a smooth morphology. (paper)

  15. Plasma source ion implantation of metal ions: Synchronization of cathodic-arc plasma production and target bias pulses

    International Nuclear Information System (INIS)

    Wood, B.P.; Reass, W.A.; Henins, I.

    1995-01-01

    An erbium cathodic-arc has been installed on a Plasma Source Ion Implantation (PSII) experiment to allow the implantation of erbium metal and the growth of adherent erbia (erbium oxide) films on a variety of substrates. Operation of the PSII pulser and the cathodic-arc are synchronized to achieve pure implantation, rather than the hybrid implantation/deposition being investigated in other laboratories. The relative phase of the 20 μs PSII and cathodic-arc pulses can to adjusted to tailor the energy distribution of implanted ions and suppress the initial high-current drain on the pulse modulator. The authors present experimental data on this effect and make a comparison to results from particle-in-cell simulations

  16. An analysis of the uncertainty and bias in DCE-MRI measurements using the spoiled gradient-recalled echo pulse sequence

    International Nuclear Information System (INIS)

    Subashi, Ergys; Choudhury, Kingshuk R.; Johnson, G. Allan

    2014-01-01

    Purpose: The pharmacokinetic parameters derived from dynamic contrast-enhanced (DCE) MRI have been used in more than 100 phase I trials and investigator led studies. A comparison of the absolute values of these quantities requires an estimation of their respective probability distribution function (PDF). The statistical variation of the DCE-MRI measurement is analyzed by considering the fundamental sources of error in the MR signal intensity acquired with the spoiled gradient-echo (SPGR) pulse sequence. Methods: The variance in the SPGR signal intensity arises from quadrature detection and excitation flip angle inconsistency. The noise power was measured in 11 phantoms of contrast agent concentration in the range [0–1] mM (in steps of 0.1 mM) and in onein vivo acquisition of a tumor-bearing mouse. The distribution of the flip angle was determined in a uniform 10 mM CuSO 4 phantom using the spin echo double angle method. The PDF of a wide range of T1 values measured with the varying flip angle (VFA) technique was estimated through numerical simulations of the SPGR equation. The resultant uncertainty in contrast agent concentration was incorporated in the most common model of tracer exchange kinetics and the PDF of the derived pharmacokinetic parameters was studied numerically. Results: The VFA method is an unbiased technique for measuringT1 only in the absence of bias in excitation flip angle. The time-dependent concentration of the contrast agent measured in vivo is within the theoretically predicted uncertainty. The uncertainty in measuring K trans with SPGR pulse sequences is of the same order, but always higher than, the uncertainty in measuring the pre-injection longitudinal relaxation time (T1 0 ). The lowest achievable bias/uncertainty in estimating this parameter is approximately 20%–70% higher than the bias/uncertainty in the measurement of the pre-injection T1 map. The fractional volume parameters derived from the extended Tofts model were found to be

  17. Electroperturbation of human stratum corneum fine structure by high voltage pulses: a freeze-fracture electron microscopy and differential thermal analysis study.

    Science.gov (United States)

    Jadoul, A; Tanojo, H; Préat, V; Bouwstra, J A; Spies, F; Boddé, H E

    1998-08-01

    Application of high voltage pulses (HVP) to the skin has been shown to promote the transdermal drug delivery by a mechanism involving skin electroporation. The aim of this study was to detect potential changes in lipid phase and ultrastructure induced in human stratum corneum by various HVP protocols, using differential thermal analysis and freeze-fracture electron microscopy. Due to the time involved between the moment the electric field is switched off and the analysis, only "secondary" phenomena rather than primary events could be observed. A decrease in enthalpies for the phase transitions observed at 70 degrees C and 85 degrees C was detected by differential thermal analysis after HVP treatment. No changes in transition temperature could be seen. The freeze-fracture electron microscopy study revealed a dramatic perturbation of the lamellar ordering of the intercellular lipid after application of HVP. Most of the planes displayed rough surfaces. The lipid lamellae exhibited rounded off steps or a vanished stepwise order. There was no evidence for perturbation of the corneocytes content. In conclusion, the freeze-fracture electron microscopy and differential thermal analysis studies suggest that HVP application induces a general perturbation of the stratum corneum lipid ultrastructure.

  18. Degradation mechanisms of 4-chlorophenol in a novel gas-liquid hybrid discharge reactor by pulsed high voltage system with oxygen or nitrogen bubbling.

    Science.gov (United States)

    Zhang, Yi; Zhou, Minghua; Hao, Xiaolong; Lei, Lecheng

    2007-03-01

    The effect of gas bubbling on the removal efficiency of 4-chlorophenol (4-CP) in aqueous solution has been investigated using a novel pulsed high voltage gas-liquid hybrid discharge reactor, which generates gas-phase discharge above the water surface simultaneously with the spark discharge directly in the liquid. The time for 100% of 4-CP degradation in the case of oxygen bubbling (7 min) was much shorter than that in the case of nitrogen bubbling (25 min) as plenty of hydrogen peroxide and ozone formed in oxygen atmosphere enhanced the removal efficiency of 4-CP. Except for the main similar intermediates (4-chlorocatechol, hydroquinone and 1,4-benzoquinone) produced in the both cases of oxygen and nitrogen bubbling, special intermediates (5-chloro-3-nitropyrocatechol, 4-chloro-2-nitrophenol, nitrate and nitrite ions) were produced in nitrogen atmosphere. The reaction pathway of 4-CP in the case of oxygen bubbling was oxygen/ozone attack on the radical hydroxylated derivatives of 4-CP. However, in the case of nitrogen bubbling, hydroxylation was the main reaction pathway with effect of N atom on degradation of 4-CP.

  19. A simple sub-nanosecond ultraviolet light pulse generator with high repetition rate and peak power.

    Science.gov (United States)

    Binh, P H; Trong, V D; Renucci, P; Marie, X

    2013-08-01

    We present a simple ultraviolet sub-nanosecond pulse generator using commercial ultraviolet light-emitting diodes with peak emission wavelengths of 290 nm, 318 nm, 338 nm, and 405 nm. The generator is based on step recovery diode, short-circuited transmission line, and current-shaping circuit. The narrowest pulses achieved have 630 ps full width at half maximum at repetition rate of 80 MHz. Optical pulse power in the range of several hundreds of microwatts depends on the applied bias voltage. The bias voltage dependences of the output optical pulse width and peak power are analysed and discussed. Compared to commercial UV sub-nanosecond generators, the proposed generator can produce much higher pulse repetition rate and peak power.

  20. Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chris, E-mail: chrischang81@gmail.com; Karunasiri, Gamani, E-mail: karunasiri@nps.edu [Department of Physics, Naval Postgraduate School, Monterey, CA 93943 (United States); Alves, Fabio, E-mail: falves@alionscience.com [Alion Science and Technology at NPS, Monterey, CA 93943 (United States)

    2016-01-15

    Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to be sustainable only for a specific range of RC values depending on the SCR’s intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.

  1. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    Science.gov (United States)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  2. Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

    International Nuclear Information System (INIS)

    Hsieh, Tien-Yu; Chang, Ting-Chang; Chen, Te-Chih; Tsai, Ming-Yen; Chen, Yu-Te

    2013-01-01

    This paper investigates the degradation mechanism of amorphous InGaZnO thin-film transistors under DC and AC gate bias stress. Comparing the degradation behavior at equal accumulated effective stress time, more pronounced threshold voltage shift under AC positive gate bias stress in comparison with DC stress indicates extra electron-trapping phenomenon that occurs in the duration of rising/falling time in pulse. Contrarily, illuminated AC negative gate bias stress exhibits much less threshold voltage shift than DC stress, suggesting that the photo-generated hole does not have sufficient time to drift to the interface of IGZO/gate insulator and causes hole-trapping under AC operation. Since the evolution of threshold voltage fits the stretched-exponential equation well, the different degradation tendencies under DC/AC stress can be attributed to the different electron- and hole-trapping efficiencies, and this is further verified by varying pulse waveform. - Highlights: ► Static and dynamic gate bias stresses are imposed on InGaZnO TFTs. ► Dynamic positive gate bias induces more pronounced threshold voltage shift. ► Static negative-bias illumination stress induces more severe threshold voltage shift. ► Evolution of threshold voltage fits the stretched-exponential equation well

  3. Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

    Science.gov (United States)

    Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

    2017-08-01

    In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

  4. Effect of applied bias voltage on corrosion-resistance for TiC 1- xN x and Ti 1- xNb xC 1- yN y coatings

    Science.gov (United States)

    Caicedo, J. C.; Amaya, C.; Yate, L.; Aperador, W.; Zambrano, G.; Gómez, M. E.; Alvarado-Rivera, J.; Muñoz-Saldaña, J.; Prieto, P.

    2010-02-01

    Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and "impurities" of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

  5. Effect of applied bias voltage on corrosion-resistance for TiC{sub 1-x}N{sub x} and Ti{sub 1-x}Nb{sub x}C{sub 1-y}N{sub y} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Amaya, C. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Laboratorio de Recubrimientos Duros DT-ASTIN SENA, Cali (Colombia); Yate, L. [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Aperador, W.; Zambrano, G.; Gomez, M.E. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Alvarado-Rivera, J.; Munoz-Saldana, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro (Mexico); Prieto, P. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Centro de Excelencia en Nuevos Materiales, Calle 13 100-00 Edificio 320, espacio 1026, Cali (Colombia)

    2010-02-15

    Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

  6. Effect of applied bias voltage on corrosion-resistance for TiC1-xNx and Ti1-xNbxC1-yNy coatings

    International Nuclear Information System (INIS)

    Caicedo, J.C.; Amaya, C.; Yate, L.; Aperador, W.; Zambrano, G.; Gomez, M.E.; Alvarado-Rivera, J.; Munoz-Saldana, J.; Prieto, P.

    2010-01-01

    Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

  7. Silver-Collagen Dressing and High-voltage, Pulsed-current Therapy for the Treatment of Chronic Full-thickness Wounds: A Case Series.

    Science.gov (United States)

    Zhou, Kehua; Krug, Kenneth; Stachura, John; Niewczyk, Paulette; Ross, Michael; Tutuska, Justine; Ford, Gregory

    2016-03-01

    Research suggests high-voltage, pulsed-current electric therapy (HVPC) is safe and effective for treating chronic wounds, and some data suggest silver- and collagen-based dressings may facilitate healing. A combination therapy utilizing both HVPC and silver-collagen dressing may present clinical advantages. To explore the effect of the combined therapy for chronic full-thickness wounds, a prospective, consecutive case series study was conducted. All participants were adults with wounds of at least 6 weeks' duration. After obtaining informed consent, patient and wound characteristics were obtained, wounds were assessed and measured, and patients received 2 to 3 HVPC treatments per week followed by application of the silver- and collagen-based dressing for a period of 2 weeks. Data were analyzed descriptively, and changes in wound size and volume from baseline were analyzed using Wilcoxon Signed Rank Test. The dressings were saturated with normal saline, used simultaneously during the 45-minute HVPC treatment, and left on top of the wound after treatment. The HVPC electro pads (stainless steel electrodes with a sponge interface) also were moistened with normal saline and the cathode placed on top of the wound. If the patient had more than 1 wound on the same leg, the anode was placed on the additional wound (otherwise over the intact skin nearby). Secondary dressings (eg, foam and/ or gauze) were used as clinically appropriate, and a 4-layer compression wrap was used, if indicated, for patients with venous ulcers. Ten (10) patients (3 women, 7 men, 57.30 ± 9.70 years old with 14 wounds of 273.10 ± 292.03 days' duration before study) completed the study and were included in the final analyses. Average wound surface area decreased from 13.78 ± 21.35 cm(2) to 9.07 ± 16.81 cm(2) (42.52% ± 34.16% decrease, P = 0.002) and wound volume decreased from 3.39 ± 4.31 cm(3) to 1.28 ± 2.25 cm(3) (66.84% ± 25.07% decrease, P = 0.001). One (1) patient was discharged with

  8. Light emitting diode driver with differential voltage supply

    NARCIS (Netherlands)

    2015-01-01

    The current invention relates to a driver for driving one or a plurality of LEDs (D1, D2), comprising at least one driving unit (201, 202) adapted to be supplied with a differential voltage, between one first bias voltage (VB1) and one second bias voltage (VB2), the differential voltage being

  9. Fast and accurate methods for the performance testing of highly-efficient c-Si photovoltaic modules using a 10 ms single-pulse solar simulator and customized voltage profiles

    International Nuclear Information System (INIS)

    Virtuani, A; Rigamonti, G; Friesen, G; Chianese, D; Beljean, P

    2012-01-01

    Performance testing of highly efficient, highly capacitive c-Si modules with pulsed solar simulators requires particular care. These devices in fact usually require a steady-state solar simulator or pulse durations longer than 100–200 ms in order to avoid measurement artifacts. The aim of this work was to validate an alternative method for the testing of highly capacitive c-Si modules using a 10 ms single pulse solar simulator. Our approach attempts to reconstruct a quasi-steady-state I–V (current–voltage) curve of a highly capacitive device during one single 10 ms flash by applying customized voltage profiles–-in place of a conventional V ramp—to the terminals of the device under test. The most promising results were obtained by using V profiles which we name ‘dragon-back’ (DB) profiles. When compared to the reference I–V measurement (obtained by using a multi-flash approach with approximately 20 flashes), the DB V profile method provides excellent results with differences in the estimation of P max (as well as of I sc , V oc and FF) below ±0.5%. For the testing of highly capacitive devices the method is accurate, fast (two flashes—possibly one—required), cost-effective and has proven its validity with several technologies making it particularly interesting for in-line testing. (paper)

  10. Enhanced analogue front-end for the measurement of the high state of wide-band voltage pulses with 87 dB common-mode rejection ratio and ±0.65 ppm 1-day offset stability

    CERN Document Server

    AUTHOR|(SzGeCERN)712364; Arpaia, Pasquale; Martino, Michele

    2015-01-01

    An improved analogue front-end for measuring the high state of trapezoidal voltage pulses with transition duration of 3 μs is presented. A new measurement system, composed by a front-end and the state-of-the-art acquisition board NI PXI-5922, has been realized with improved Common Mode Rejection Ratio (CMRR) of more than 87 dB at DC and 3-sigma stability of }0.65 ppm over 1 day. After highlighting the main design enhancements with respect to state-of-the-art solutions, the CMRR measurement is reported. The output drift due to temperature and humidity is assessed to be negligible. Finally, the worst-case repeatability is measured both with shorted-to-ground inputs and with an applied common-mode voltage of 10 V, which represents the nominal working condition.

  11. Generation of plasmas in water: utilization of a high-frequency, low-voltage bipolar pulse power supply with impedance control

    International Nuclear Information System (INIS)

    Baroch, P; Potocky, S; Saito, N

    2011-01-01

    Presented work focuses on the investigation and characterization of plasma discharges generated in water by newly developed bipolar pulse power supply. The main aim of our work was to solve and overcome problems with intensive arc discharge transition when the discharge is ignited and maintained by a low output impedance pulse power supply. For this purpose a novel type of bipolar pulse power supply was developed and tested. It was found that two distinguished stable modes of discharges generated in the water can be realized. Effects of water conductivity, pulse frequency and initial water temperature on the discharge properties were investigated. Optical emission spectroscopy was employed to study plasma parameters of the discharge and the correlation between the data obtained from the optical emission spectroscopy and the chemical species measured in the water was carried out.

  12. Laser-pulsed relativistic electron gun

    International Nuclear Information System (INIS)

    Sherman, N.K.

    1986-01-01

    A relativistic (β ≅ 0.8) electron gun with good emittance and subnanosecond pulse duration which can be synchronized to picosecond laser pulses is being developed at NRC for use in studies of particle acceleration by lasers. Bursts of electron pulses exceeding 280 keV in energy have been extracted into air form a laser-driven vacuum photodiode. Trains of 5 ps pulses of ultraviolet UV light illuminate a magnesium cathode. Photoelectrons emitted from the cathode are accelerated in a graded electrostatic potential set up by a 360 kV Marx-generator. The UV pulses are obtained by doubling the frequency of a 606 nm dye laser modelocked at 160 MHz. Electron energies were measured by residual range in an echelon of Al foils. Total charge per burst was measured by picoammeter. Time structure of the bursts has been examined with plastic scintillator and a fast photomultiplier. Tests on a low voltage photodiode achieved a current density of 180 A/cm/sup 2/ from an Mg cathode, with quantum efficiency of 2.4 x 10/sup -6/ electron per UV photon. The brevity and intensity of the laser pulses cause the electric charge collected per pulse to increase linearly with bias voltage rather than according to the Langmuir-Child law. Gun emittance is about 150 mm-msr and beam brightness is about 1A/cm/sup 2/-sr. Estimated duration of individual electron pulses of a burst is about 400 ps with instantaneous current of about 0.1 mA. Energy spread within one pulse is expected to be about 15%. This gun has the potential to be a useful source of relativistic electrons for laser acceleration studies

  13. Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

    Energy Technology Data Exchange (ETDEWEB)

    Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

    2016-08-15

    Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

  14. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  15. Programmable pulse generator

    International Nuclear Information System (INIS)

    Xue Zhihua; Lou Binqiao; Duan Xiaohui

    2002-01-01

    The author introduces the design of programmable pulse generator that is based on a micro-controller and controlled by RS232 interface of personal computer. The whole system has good stability. The pulse generator can produce TTL pulse and analog pulse. The pulse frequency can be selected by EPLD. The voltage amplitude and pulse width of analog pulse can be adjusted by analog switches and digitally-controlled potentiometers. The software development tools of computer is National Instruments LabView5.1. The front panel of this virtual instrumentation is intuitive and easy-to-use. Parameters can be selected and changed conveniently by knob and slide

  16. Elimination of DC-Link Current Ripple for Modular Multilevel Converters With Capacitor Voltage-Balancing Pulse-Shifted Carrier PWM

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2015-01-01

    The modular multilevel converter (MMC) is attractive for medium- and high-power applications because of its high modularity, availability, and power quality. In this paper, the current ripple on the dc link of the three-phase MMC derived from the phase-shifted carrier-based pulse-width modulation...

  17. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  18. Letter Report on 500 nA Pulsed Current from Field Ionization Source

    International Nuclear Information System (INIS)

    Ellsworth, Jennifer L.

    2013-01-01

    We recently produced a milestone 500 nA of pulsed current using 40 Ir field ionizer electrodes in our ion source. In conclusion, we have produced the milestone pulsed current of 500 nA using 40 electrochemically etched iridium tips in a field ionization source. The pulsed current output is repeatable and scales as expected with gas fill pressure and bias voltage. We expect these current will be sufficient to produce neutral yields of 1 · 10 7 DT n/s.

  19. Examination of the spatial-response uniformity of a microchannel-plate detector using a pulsed high-voltage electron gun

    International Nuclear Information System (INIS)

    Alumot, D; Kroupp, E; Fisher, A

    2014-01-01

    In this paper we describe an alternative method to examine the spatial-response uniformity of a microchannel-plate (MCP) detector to a ∼ 1 ns pulse of soft x-rays. The examination was performed by illuminating the MCP surface with energetic electrons rather than with x-rays. It is shown that the MCP features similar, yet not identical, response to pulses of soft x-ray photons or energetic electrons, making such examinations much simpler and less expensive. The building of the electron-gun system is relatively easy and inexpensive, and in addition to verifying the spatial uniformity of the response of the MCP to incoming particles and radiation, it can be used to detect damaged areas on the detector. A comparison between the results obtained using the electron-gun with those obtained using a laser-produced-plasma x-ray source, demonstrating the reliability of the method, is presented

  20. Bias-field equalizer for bubble memories

    Science.gov (United States)

    Keefe, G. E.

    1977-01-01

    Magnetoresistive Perm-alloy sensor monitors bias field required to maintain bubble memory. Sensor provides error signal that, in turn, corrects magnitude of bias field. Error signal from sensor can be used to control magnitude of bias field in either auxiliary set of bias-field coils around permanent magnet field, or current in small coils used to remagnetize permanent magnet by infrequent, short, high-current pulse or short sequence of pulses.

  1. Charge collection and charge pulse formation in highly irradiated silicon planar detectors

    International Nuclear Information System (INIS)

    Dezillie, B.; Li, Z.; Eremin, V.

    1998-06-01

    The interpretation of experimental data and predictions for future experiments for high-energy physics have been based on conventional methods like capacitance versus voltage (C-V) measurements. Experiments carried out on highly irradiated detectors show that the kinetics of the charge collection and the dependence of the charge pulse amplitude on the applied bias are deviated too far from those predicted by the conventional methods. The described results show that in highly irradiated detectors, at a bias lower than the real full depletion voltage (V fd ), the kinetics of the charge collection (Q) contains a fast and a slow component. At V = V fd *, which is the full depletion voltage traditionally determined by the extrapolation of the fast component amplitude of q versus bias to the maximum value or from the standard C-V measurements, the pulse has a slow component with significant amplitude. This slow component can only be eliminated by applying additional bias that amounts to the real full depletion voltage (V fd ) or more. The above mentioned regularities are explained in this paper in terms of a model of an irradiated detector with multiple regions. This model allows one to use C-V, in a modified way, as well as TChT (transient charge technique) measurements to determine the V fd for highly irradiated detectors

  2. Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

    2014-05-15

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

  3. Pulse power modulators - an overview

    International Nuclear Information System (INIS)

    Venkatramani, N.

    2006-01-01

    Pulse power modulators are electronic devices to provide, high voltage, high current, power bursts. Ideally, a modulator, with the means to shape and control the pulses, acts as a switch between a high voltage power supply and its load. This article gives an overview of the pulse power modulators: starting with the basics of pulse and modulation, it covers modulation topologies, different types of modulators, major subsystems and pulse measurement techniques. The various applications of pulse power modulators and the recent trends have been included at the end. (author)

  4. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Energy Technology Data Exchange (ETDEWEB)

    Baszczyk, M., E-mail: baszczyk@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Dorosz, P.; Glab, S.; Kucewicz, W. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Mik, L. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); State Higher Vocational School, Tarnow (Poland); Sapor, M. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland)

    2016-07-11

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  5. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Science.gov (United States)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-07-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  6. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    International Nuclear Information System (INIS)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-01-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  7. Behaviour of total surface charge in SiO2-Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique

    International Nuclear Information System (INIS)

    Kang, Ban-Hong; Lee, Wah-Pheng; Yow, Ho-Kwang; Tou, Teck-Yong

    2009-01-01

    Effects of time-accumulated ultraviolet (UV) irradiation and surface treatment on thermally oxidized p-type silicon wafers were investigated by using the surface photo voltage (SPV) technique via the direct measurement of the total surface charge, Q SC . The rise and fall times of Q sc curves, as a function of accumulated UV irradiation, depended on the thermal oxide thickness. A simple model was proposed to explain the time-varying characteristics of Q sc based on the UV-induced bond breaking of SiOH and SiH, and photoemission of bulk electrons to wafer surface where O 2 - charges were formed. While these mechanisms resulted in charge variations and hence in Q sc , these could be removed by rinsing the silicon wafers in de-ionized water followed by spin-dry or blow-dry by an ionizer fan. Empirical parameters were used in the model simulations and curve-fitting of Q SC . The simulated results suggested that initial changes in the characteristic behaviour of Q sc were mainly due to the net changes in the positive and negative charges, but subsequently were dominated by the accumulation of O 2 - during the UV irradiation.

  8. High reliability low jitter pulse generator

    Science.gov (United States)

    Savage, Mark E.; Stoltzfus, Brian S.

    2013-01-01

    A method and concomitant apparatus for generating pulses comprising providing a laser light source, disposing a voltage electrode between ground electrodes, generating laser sparks using the laser light source via laser spark gaps between the voltage electrode and the ground electrodes, and outputting pulses via one or more insulated ground connectors connected to the voltage electrode.

  9. Observation of electrostatically released DNA from gold electrodes with controlled threshold voltages.

    Science.gov (United States)

    Takeishi, Shunsaku; Rant, Ulrich; Fujiwara, Tsuyoshi; Buchholz, Karin; Usuki, Tatsuya; Arinaga, Kenji; Takemoto, Kazuya; Yamaguchi, Yoshitaka; Tornow, Marc; Fujita, Shozo; Abstreiter, Gerhard; Yokoyama, Naoki

    2004-03-22

    DNA oligo-nucleotides, localized at Au metal electrodes in aqueous solution, are found to be released when applying a negative bias voltage to the electrode. The release was confirmed by monitoring the intensity of the fluorescence of cyanine dyes (Cy3) linked to the 5' end of the DNA. The threshold voltage of the release changes depending on the kind of linker added to the DNA 3'-terminal. The amount of released DNA depends on the duration of the voltage pulse. Using this technique, we can retain DNA at Au electrodes or Au needles, and release the desired amount of DNA at a precise location in a target. The results suggest that DNA injection into living cells is possible with this method. (c) 2004 American Institute of Physics

  10. A prospective study analyzing the application of radiofrequency energy and high-voltage, ultrashort pulse duration electrical fields on the quantitative reduction of adipose tissue.

    Science.gov (United States)

    Duncan, Diane Irvine; Kim, Theresa H M; Temaat, Robbin

    2016-10-01

    Noninvasive fat reduction is claimed by many device manufacturers, but proof of efficacy has been difficult to establish. This prospective study was designed to measure the reduction of fat thickness and actual volume reduction in 20 female patients treated with an external radiofrequency (RF) device. This device combines RF heat, suction coupled vacuum, and oscillating electrical pulses that induce adipocyte death over time. Patients underwent pre- and post-treatment and intercurrent measurements of weight, body mass index, ultrasonic transcutaneous fat thickness, and 2D and 3D Vectra photography with independent calculation of circumferential and volumetric change. Mean transcutaneous ultrasound thickness at reproducible points was 2.78 cm; at 1-month post-treatment, the mean fat thickness was 1.71 cm. At 3-month post-treatment, the mean fat thickness reduction was 39.6%. Vectra circumference measurements were taken at 10-mm intervals, with postural and breathing cycle control. Independent analysis of serial measurements from + 60 to - 70 mm showed mean abdominal circumference measurement of 2.3 cm. Mean abdominal volume loss was 202.4 and 428.5 cc at 1- and 3-month post-treatment, respectively. Scanning electron microscopy confirmed that permanent cell destruction was caused by irreversible electroporation. Pyroptosis appears to be the mechanism of action.

  11. Assembly delay line pulse generators

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    Assembly of six of the ten delay line pulse generators that will power the ten kicker magnet modules. One modulator part contains two pulse generators. Capacitors, inductances, and voltage dividers are in the oil tank on the left. Triggered high-pressure spark gap switches are on the platforms on the right. High voltage pulse cables to the kicker magnet emerge under the spark gaps. In the centre background are the assembled master gaps.

  12. Pulse generator for bias materials in the plasma immerse ion implantation process; Generador de pulsos para polarizar materiales en el proceso de implantacion de iones inmersos en plasma

    Energy Technology Data Exchange (ETDEWEB)

    Lopez Callegas, Regulo; Valencia Alvarado, Raul; Munoz Castro, Arturo Eduardo; Godoy Cabrera, Oscar Gerardo [Instituto Nacional de Investigaciones Nucleares, Mexico D.F. (Mexico); Moreno Saavedra, Hilda; Gonzalez Colin, Mireya; Mariano Escamilla, Hector Fernando [Instituto Tecnologico de Toluca, Estado de Mexico (Mexico)

    2003-10-15

    The 0-10 kV pulse generator has been designed, with 100 {mu}s duration and 1-100 Hz frequencies ranges. The use of the pulse generator is in the plasma immersed ion implantation technique (P III). The process was realized in 304 austenitic stainless steel, the results were analyzed by: SEM, X-rays diffraction and hardness Vickers. The hardness was increased due to the efficiency of the pulse generator and P III process, the results obtained showed that the nitrogen inside the stainless steel was implanted and besides some nitrides was formed and therefore the hardness was increased. Also, the more adequate work pressure was determined to carry out the P III process. [Spanish] Se presenta el diseno de un generador de pulsos de alto voltaje con amplitudes controladas de hasta 10 kV, la duracion maxima de los pulsos es del orden de los 100 {mu}s y frecuencia de repeticion en el intervalo de 1-100 Hz. La aplicacion de este generador de pulsos es para el proceso de implantacion de iones en materiales inmersos en plasmas (PIII). Los analisis hechos a los aceros austeniticos cedula 304 mediante microscopia electronica de barrido, difraccion de rayos X y dureza Vickers, muestran la eficiencia obtenida con el generador de pulsos en el proceso PIII, debido a que en el acero inoxidable se presenta un incremento en el nitrogeno y conformacion de algunos nitruros, lo cual da lugar al incremento de la dureza. Asimismo, se determino la presion de trabajo mas adecuada para llevar a cabo el proceso PIII.

  13. Controlled generation of a single Trichel pulse and a series of single Trichel pulses in air

    Science.gov (United States)

    Mizeraczyk, Jerzy; Berendt, Artur; Akishev, Yuri

    2018-04-01

    In this paper, a simple method for the controlled generation of a single Trichel pulse or a series of single Trichel pulses of a regulated repetition frequency in air is proposed. The concept of triggering a single Trichel pulse or a series of such pulses is based on the precise controlling the voltage inception of the negative corona, which can be accomplished through the use of a ramp voltage pulse or a series of such pulses with properly chosen ramp voltage pulse parameters (rise and fall times, and ramp voltage pulse repetition frequency). The proposal has been tested in experiments using a needle-to-plate electrode arrangement in air, and reproducible Trichel pulses (single or in a series) were obtained by triggering them with an appropriately designed voltage waveform. The proposed method and results obtained have been qualitatively analysed. The analysis provides guidance for designing the voltage ramp pulse in respect of the generation of a single Trichel pulse or a series of single Trichel pulses. The controlled generation of a single Trichel pulse or a series of such pulses would be a helpful research tool for the refined studies of the fundamental processes in a negative corona discharge in a single- (air is an example) and multi-phase gaseous fluids. The controlled generation of a single Trichel pulse or a series of Trichel pulses can also be attractive for those corona treatments which need manipulation of the electric charge and heat portions delivered by the Trichel pulses to the object.

  14. B1 mapping for bias-correction in quantitative T1 imaging of the brain at 3T using standard pulse sequences.

    Science.gov (United States)

    Boudreau, Mathieu; Tardif, Christine L; Stikov, Nikola; Sled, John G; Lee, Wayne; Pike, G Bruce

    2017-12-01

    B 1 mapping is important for many quantitative imaging protocols, particularly those that include whole-brain T 1 mapping using the variable flip angle (VFA) technique. However, B 1 mapping sequences are not typically available on many magnetic resonance imaging (MRI) scanners. The aim of this work was to demonstrate that B 1 mapping implemented using standard scanner product pulse sequences can produce B 1 (and VFA T 1 ) maps comparable in quality and acquisition time to advanced techniques. Six healthy subjects were scanned at 3.0T. An interleaved multislice spin-echo echo planar imaging double-angle (EPI-DA) B 1 mapping protocol, using a standard product pulse sequence, was compared to two alternative methods (actual flip angle imaging, AFI, and Bloch-Siegert shift, BS). Single-slice spin-echo DA B 1 maps were used as a reference for comparison (Ref. DA). VFA flip angles were scaled using each B 1 map prior to fitting T 1 ; the nominal flip angle case was also compared. The pooled-subject voxelwise correlation (ρ) for B 1 maps (BS/AFI/EPI-DA) relative to the reference B 1 scan (Ref. DA) were ρ = 0.92/0.95/0.98. VFA T 1 correlations using these maps were ρ = 0.86/0.88/0.96, much better than without B 1 correction (ρ = 0.53). The relative error for each B 1 map (BS/AFI/EPI-DA/Nominal) had 95 th percentiles of 5/4/3/13%. Our findings show that B 1 mapping implemented using product pulse sequences can provide excellent quality B 1 (and VFA T 1 ) maps, comparable to other custom techniques. This fast whole-brain measurement (∼2 min) can serve as an excellent alternative for researchers without access to advanced B 1 pulse sequences. 1 Technical Efficacy: Stage 1 J. Magn. Reson. Imaging 2017;46:1673-1682. © 2017 International Society for Magnetic Resonance in Medicine.

  15. Spectrum analysis of a voltage source converter due to semiconductor voltage drops

    DEFF Research Database (Denmark)

    Rasmussen, Tonny Wederberg; Eltouki, Mustafa

    2017-01-01

    It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

  16. [Development of residual voltage testing equipment].

    Science.gov (United States)

    Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

    2014-07-01

    For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

  17. A quantum accurate waveform synthesizer as a voltage reference for an electronic primary thermometer

    Science.gov (United States)

    Pollarolo, Alessio; Benz, Samuel; Rogalla, Horst; Dresselhaus, Paul

    2014-03-01

    We are using a quantum voltage noise source (QVNS) for use as an intrinsically accurate voltage reference for a new type of electronic temperature standard. In Johnson Noise Thermometry (JNT) the noise of a resistor is used to measure temperature or Boltzmann's constant k, because the Nyquist equation =4kTR Δf shows that the power spectral density is proportional to k, temperature T, resistance R and measurement bandwidth Δf . The QVNS is a digital to analog converter used to synthesize a voltage waveform that resembles pseudo-random noise comparable in amplitude to the resistor noise. The signal generated is a frequency comb of harmonics tones that are equally spaced in frequency, all having identical amplitudes but random phases. The QVNS is an array superconducting Josephson junctions that are biased with a pulsed waveform clocked at 10 GHz. The accuracy of the voltage waveform derives from the identical voltage pulses produced by each junction that are perfectly quantized because their time-integrals are always equal to flux quantum h/2 e. The time-dependent output voltage waveform is determined by the number of pulses and their density in time. The measurement electronics exploits cross-correlation techniques to reduce the uncorrelated measurement noise so as to reveal the resistor noise, both of which are on the order of 2 nV/ √Hz. With this technique we have measured k with an uncertainty of about one part in 105, which we hope to improve by another order of magnitude with further research.

  18. The LMF triaxial MITL voltage adder system

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Bennett, L.F.; Lockner, T.R.; Olson, R.E.; Poukey, J.W.

    1992-01-01

    The light-ion microfusion driver design consists of multiple accelerating modules fired in coincidence and sequentially in order to provide the desired ion energy, power pulse shape and energy deposition uniformity on an Inertial Confinement Fusion (ICF) target. The basic energy source is a number of Marx generators which, through the appropriate pulse power conditioning, provide the necessary voltage pulse wave form to the accelerating gaps or feeds of each module. The cavity gaps are inductively isolated, and the voltage addition occurs in the center conductor of the voltage adder which is the positive electrode while the electrons of the sheath flow closer to the outer cylinder which is the magnetically insulated cathode electrode. Each module powers a separate two-stage extraction diode which provides a low divergence ion beam. In order to provide the two separate voltage pulses required by the diode, a triaxial adder system is designed for each module. The voltage addition occurs in two separate MITLs. The center hollow cylinder (anode) of the second MITL also serves as the outer cathode electrode for the extension of the first voltage adder MITL. The voltage of the second stage is about twice that of the first stage. The cavities are connected in series to form the outer cylinder of each module. The accelerating modules are positioned radially in a symmetrical way around the fusion chamber. A preliminary conceptual design of the LMF modules with emphasis on the voltage adders and extension MITLs will be presented and discussed

  19. Pulsed electron beam generation with fast repetitive double pulse system

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Surender Kumar; Deb, Pankaj; Shyam, Anurag, E-mail: surender80@gmail.com [Energetics and Electromagnetics Division, Bhabha Atomic Research Centre, Visakhapatnam (India); Sharma, Archana [Accelerator and Pulse Power Division, Bhabha Atomic Research Centre, Mumbai (India)

    2014-07-01

    Longer duration high voltage pulse (∼ 100 kV, 260 ns) is generated and reported using helical pulse forming line in compact geometry. The transmission line characteristics of the helical pulse forming line are also used to develop fast repetition double pulse system with very short inter pulse interval. It overcomes the limitations caused due to circuit parameters, power supplies and load characteristics for fast repetitive high voltage pulse generation. The high voltage double pulse of 100 kV, 100 ns with an inter pulse repetition interval of 30 ns is applied across the vacuum field emission diode for pulsed electron beam generation. The electron beam is generated from cathode material by application of negative high voltage (> 100 kV) across the diode by explosive electron emission process. The vacuum field emission diode is made of 40 mm diameter graphite cathode and SS mesh anode. The anode cathode gap was 6 mm and the drift tube diameter was 10 cm. The initial experimental results of pulsed electron beam generation with fast repetitive double pulse system are reported and discussed. (author)

  20. Time-resolved electrical measurements of a pulsed-dc methane discharge used in diamond-like carbon films production

    International Nuclear Information System (INIS)

    Corbella, C.; Polo, M.C.; Oncins, G.; Pascual, E.; Andujar, J.L.; Bertran, E.

    2005-01-01

    Amorphous hydrogenated carbon (a-C:H) thin films were obtained at room temperature via asymmetric bipolar pulsed-dc methane glow discharge. The power frequency values were varied from 100 to 200 kHz and the maximum amplitude voltage from -600 to -1400 V. Such films present diamond-like carbon (DLC) properties [J.L. Andujar, M. Vives, C. Corbella, E. Bertran, Diamond Relat. Mater. 12 (2003) 98]. The plasma, powered by a pulse frequency of 100 kHz, was electrically studied by a Langmuir probe. The next parameters were calculated within the pulse cycle from I-V measurements with 1 μs resolution: plasma and floating potentials, electron temperature, and electron and ion densities. The presence of a population of hot electrons (10 eV) was detected at high bias voltage region. The density of cold electrons grows one order of magnitude after each negative pulse, whereas the ion density suffers a prompt increase during each positive pulse. The surface topography of DLC films was scanned by atomic force microscopy (AFM). A smoothly varying friction coefficient (between 0.2 and 0.3) was measured by AFM in contact mode. X-ray reflectivity (XRR) analysis provided a wide characterization of the films, involving density, thickness and roughness. The C/H ratio, as directly obtained by elemental analysis (EA), shows an increase at higher bias voltages. All these features are discussed in terms of process parameters varied in film growth

  1. Simulation of HPIB propagation in biased charge collector

    International Nuclear Information System (INIS)

    Li Hongyu; Qiu Aici

    2004-01-01

    A 2.5D PIC simulation using KARAT code for inner charge propagation within biased charge collector for measuring HPIB is presented. The simulation results indicate that the charges were neutralized but the current non-neutralized in the biased charge collector. The influence of ions collected vs biased voltage of the collector was also simulated. -800 V biased voltage can meet the measurement of 500 keV HPIB, and this is consistent with the experimental results

  2. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    International Nuclear Information System (INIS)

    Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

    2015-01-01

    Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

  3. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Takahiro, E-mail: yamada-takahiro@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Maezawa, Masaaki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Urano, Chiharu [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 3, Umezono 1-1-1, Tsukuba, Ibaraki 305-8563 (Japan)

    2015-11-15

    Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

  4. Profiling of barrier capacitance and spreading resistance using a transient linearly increasing voltage technique.

    Science.gov (United States)

    Gaubas, E; Ceponis, T; Kusakovskij, J

    2011-08-01

    A technique for the combined measurement of barrier capacitance and spreading resistance profiles using a linearly increasing voltage pulse is presented. The technique is based on the measurement and analysis of current transients, due to the barrier and diffusion capacitance, and the spreading resistance, between a needle probe and sample. To control the impact of deep traps in the barrier capacitance, a steady state bias illumination with infrared light was employed. Measurements of the spreading resistance and barrier capacitance profiles using a stepwise positioned probe on cross sectioned silicon pin diodes and pnp structures are presented.

  5. Bias stress effect and recovery in organic field effect transistors : proton migration mechanism

    NARCIS (Netherlands)

    Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de D.M.; Bobbert, P.A.; Bao, Z.; McCulloch, I.

    2010-01-01

    Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of

  6. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

  7. Sympathetic bias.

    Science.gov (United States)

    Levy, David M; Peart, Sandra J

    2008-06-01

    We wish to deal with investigator bias in a statistical context. We sketch how a textbook solution to the problem of "outliers" which avoids one sort of investigator bias, creates the temptation for another sort. We write down a model of the approbation seeking statistician who is tempted by sympathy for client to violate the disciplinary standards. We give a simple account of one context in which we might expect investigator bias to flourish. Finally, we offer tentative suggestions to deal with the problem of investigator bias which follow from our account. As we have given a very sparse and stylized account of investigator bias, we ask what might be done to overcome this limitation.

  8. Magnetic pulse sharpener and delay-line

    International Nuclear Information System (INIS)

    Li Jin; Dai Guangsen; Xia Liansheng

    2002-01-01

    This paper describes a method to achieve short rise time pulse which has been delayed with a delay-line and magnetic pulse sharpener. A delay-line and two shock-lines are designed to carry pulsed signal with a maximum voltage magnitude up to 80 kV. A pulse of High voltage with arise time of 48 ns at a level of 0.1%-0.9% were achieved, and the attenuation in the line is very small

  9. Neutron induced current pulses in fission chambers

    International Nuclear Information System (INIS)

    Taboas, A.L.; Buck, W.L.

    1978-01-01

    The mechanism of neutron induced current pulse generation in fission chambers is discussed. By application of the calculated detector transfer function to proposed detector current pulse shapes, and by comparison with actually observed detector output voltage pulses, a credible, semi-empirical, trapezoidal pulse shape of chamber current is obtained

  10. Coiled transmission line pulse generators

    Science.gov (United States)

    McDonald, Kenneth Fox

    2010-11-09

    Methods and apparatus are provided for fabricating and constructing solid dielectric "Coiled Transmission Line" pulse generators in radial or axial coiled geometries. The pour and cure fabrication process enables a wide variety of geometries and form factors. The volume between the conductors is filled with liquid blends of monomers, polymers, oligomers, and/or cross-linkers and dielectric powders; and then cured to form high field strength and high dielectric constant solid dielectric transmission lines that intrinsically produce ideal rectangular high voltage pulses when charged and switched into matched impedance loads. Voltage levels may be increased by Marx and/or Blumlein principles incorporating spark gap or, preferentially, solid state switches (such as optically triggered thyristors) which produce reliable, high repetition rate operation. Moreover, these Marxed pulse generators can be DC charged and do not require additional pulse forming circuitry, pulse forming lines, transformers, or an a high voltage spark gap output switch. The apparatus accommodates a wide range of voltages, impedances, pulse durations, pulse repetition rates, and duty cycles. The resulting mobile or flight platform friendly cylindrical geometric configuration is much more compact, light-weight, and robust than conventional linear geometries, or pulse generators constructed from conventional components. Installing additional circuitry may accommodate optional pulse shape improvements. The Coiled Transmission Lines can also be connected in parallel to decrease the impedance, or in series to increase the pulse length.

  11. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Science.gov (United States)

    Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

    2015-11-01

    We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80-120%, with respect to the designed bias currents.

  12. Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir{sub 20}Mn{sub 80}/Co{sub 90}Fe{sub 10} exchange bias

    Energy Technology Data Exchange (ETDEWEB)

    Oksuezoglu, Ramis Mustafa, E-mail: rmoksuzoglu@anadolu.edu.t [University of Anadolu, Faculty of Engineering and Architecture, Department of Materials Sciences and Engineering, Iki Eyluel Campus, 26555 Eskisehir (Turkey); Yildirim, Mustafa; Cinar, Hakan [University of Anadolu, Faculty of Engineering and Architecture, Department of Materials Sciences and Engineering, Iki Eyluel Campus, 26555 Eskisehir (Turkey); Hildebrandt, Erwin; Alff, Lambert [Department of Materials Sciences, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt (Germany)

    2011-07-15

    A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni{sub 81}Fe{sub 19}/Ir{sub 20}Mn{sub 80}/Co{sub 90}Fe{sub 10}/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of <1 1 1> texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H{sub ex} and H{sub c} was not observed. L1{sub 2} phase IrMn{sub 3} could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses. - Research highlights: We discussed the influence of Ta/NiFe thicknesses on structure and grain size in AF layer and texture. A direct correlation between the <1 1 1> texture and exchange coupling was found. A direct relation between average grain size and H{sub ex} and H{sub c} was not observed. L1{sub 2} phase IrMn{sub 3} was formed by deposition at room temperature for Ta (5-6 nm)/NiFe (6-8 nm). We conclude that the coercivity is influenced by order/disorder at NiFe/IrMn/CoFe interfaces.

  13. Optical sensors for the measurement of electric current and voltage

    Energy Technology Data Exchange (ETDEWEB)

    Rutgers, W R; Hulshof, H J.M.; Laurensse, I J; van der Wey, A H

    1987-01-01

    Optical sensors for the measurement of electrical current and voltage were developed for application in electric power systems. The current sensor, based on the Faraday effect in a monomode glass fiber, and the voltage sensor, based on the transverse Pockels effect in a crystal, are demonstrated in wide-band (10 MHz) interference-free measurements of pulsed currents and impulse voltages.

  14. High voltage designing of 300.000 Volt

    International Nuclear Information System (INIS)

    Hutapea, Sumihar.

    1978-01-01

    Some methods of designing a.c and d.c high voltage supplies are discussed. A high voltage supply for the Gama Research Centre accelerator is designed using transistor pulse generators. High voltage transformers being made using radio transistor ferrits as a core are also discussed. (author)

  15. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  16. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  17. Updating the induction module from single-pulse to double-pulses

    International Nuclear Information System (INIS)

    Huang Ziping; Wang Huacen; Deng Jianjun

    2002-01-01

    A double-pulse Linear Induced Accelerator (LIA) module is reconstructed based on a usual simple-pulse LIA module. By changing the length of one of the cables between the inductive cell and the Blumlein pulse forming line, two induction pulses with 90 ns FWHM and 150 kV pulse voltage are generated by the ferrite cores inductive cell. The interval time of the pulses is adjustable by changing the lengths of the cable

  18. Voltage Stabilizer Based on SPWM technique Using Microcontroller

    OpenAIRE

    K. N. Tarchanidis; J. N. Lygouras; P. Botsaris

    2013-01-01

    This paper presents an application of the well known SPWM technique on a voltage stabilizer, using a microcontroller. The stabilizer is AC/DC/AC type. So, the system rectifies the input AC voltage to a suitable DC level and the intelligent control of an embedded microcontroller regulates the pulse width of the output voltage in order to produce through a filter a perfect sinusoidal AC voltage. The control program on the microcontroller has the ability to change the FET transistor ...

  19. Capacitively coupled radio-frequency plasmas excited by tailored voltage waveforms

    International Nuclear Information System (INIS)

    Lafleur, T; Delattre, P A; Booth, J P; Johnson, E V

    2013-01-01

    By applying certain types of ‘tailored’ voltage waveforms (TVWs) to capacitively coupled plasmas, a dc self-bias and an asymmetric plasma response can be produced, even in geometrically symmetric reactors. Furthermore, these arbitrary applied waveforms can produce a number of interesting phenomena that are not present in typical single-frequency sinusoidal discharges. This electrical asymmetry effect presents emerging possibilities for the improved control of the ion energy and ion flux in these systems; parameters of vital importance to both etching and deposition applications for materials processing. With a combined research approach utilizing both experimental measurements, and particle-in-cell simulations, we review and extend recent investigations that study a particular class of TVW. The waveforms used have a pulse-type shape and are composed of a varying number of harmonic frequencies. This allows a strong self-bias to be produced, and causes most of the applied voltage to be dropped across a single sheath. Additionally, decreasing the pulse width (by increasing the number of harmonics), allows the plasma density and ion flux to be increased. Simulation and experimental results both demonstrate that this type of waveform can be used to separately control the ion flux and ion energy, while still producing a uniform plasma over large area (50 cm diameter) rf electrodes. (paper)

  20. Modeling study on the effects of pulse rise rate in atmospheric pulsed discharges

    Science.gov (United States)

    Zhang, Yuan-Tao; Wang, Yan-Hui

    2018-02-01

    In this paper, we present a modeling study on the discharge characteristics driven by short pulsed voltages, focusing on the effects of pulse rise rate based on the fluid description of atmospheric plasmas. The numerical results show that the breakdown voltage of short pulsed discharge is almost linearly dependent on the pulse rise rate, which is also confirmed by the derived equations from the fluid model. In other words, if the pulse rise rate is fixed as a constant, the simulation results clearly suggest that the breakdown voltage is almost unchanged, although the amplitude of pulsed voltage increases significantly. The spatial distribution of the electric field and electron density are given to reveal the underpinning physics. Additionally, the computational data and the analytical expression also indicate that an increased repetition frequency can effectively decrease the breakdown voltage and current density, which is consistent with the experimental observation.

  1. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  2. Pulsed Corona Discharge Generated By Marx Generator

    Science.gov (United States)

    Sretenovic, G. B.; Obradovic, B. M.; Kovacevic, V. V.; Kuraica, M. M.; Puric J.

    2010-07-01

    The pulsed plasma has a significant role in new environmental protection technologies. As a part of a pulsed corona system for pollution control applications, Marx type repetitive pulse generator was constructed and tested in arrangement with wire-plate corona reactor. We performed electrical measurements, and obtained voltage and current signals, and also power and energy delivered per pulse. Ozone formation by streamer plasma in air was chosen to monitor chemical activity of the pulsed corona discharge.

  3. Journal bias or author bias?

    Science.gov (United States)

    Harris, Ian

    2016-01-01

    I read with interest the comment by Mark Wilson in the Indian Journal of Medical Ethics regarding bias and conflicts of interest in medical journals. Wilson targets one journal (the New England Journal of Medicine: NEJM) and one particular "scandal" to make his point that journals' decisions on publication are biased by commercial conflicts of interest (CoIs). It is interesting that he chooses the NEJM which, by his own admission, had one of the strictest CoI policies and had published widely on this topic. The feeling is that if the NEJM can be guilty, they can all be guilty.

  4. Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

    Science.gov (United States)

    Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

    2017-04-19

    Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

  5. Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

    Science.gov (United States)

    Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

    2017-01-01

    Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

  6. The efficiency of photovoltaic cells exposed to pulsed laser light

    Science.gov (United States)

    Lowe, R. A.; Landis, G. A.; Jenkins, P.

    1993-01-01

    Future space missions may use laser power beaming systems with a free electron laser (FEL) to transmit light to a photovoltaic array receiver. To investigate the efficiency of solar cells with pulsed laser light, several types of GaAs, Si, CuInSe2, and GaSb cells were tested with the simulated pulse format of the induction and radio frequency (RF) FEL. The induction pulse format was simulated with an 800-watt average power copper vapor laser and the RF format with a frequency-doubled mode-locked Nd:YAG laser. Averaged current vs bias voltage measurements for each cell were taken at various optical power levels and the efficiency measured at the maximum power point. Experimental results show that the conversion efficiency for the cells tested is highly dependent on cell minority carrier lifetime, the width and frequency of the pulses, load impedance, and the average incident power. Three main effects were found to decrease the efficiency of solar cells exposed to simulated FEL illumination: cell series resistance, LC 'ringing', and output inductance. Improvements in efficiency were achieved by modifying the frequency response of the cell to match the spectral energy content of the laser pulse with external passive components.

  7. Biased Supervision

    OpenAIRE

    Josse Delfgaauw; Michiel Souverijn

    2014-01-01

    markdownabstract__Abstract__ When verifiable performance measures are imperfect, organizations often resort to subjective performance pay. This may give supervisors the power to direct employees towards tasks that mainly benefit the supervisor rather than the organization. We cast a principal-supervisor-agent model in a multitask setting, where the supervisor has an intrinsic preference towards specific tasks. We show that subjective performance pay based on evaluation by a biased supervisor ...

  8. The Pulse Line Ion Accelerator Concept

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Richard J.

    2006-02-15

    The Pulse Line Ion Accelerator concept was motivated by the desire for an inexpensive way to accelerate intense short pulse heavy ion beams to regimes of interest for studies of High Energy Density Physics and Warm Dense Matter. A pulse power driver applied at one end of a helical pulse line creates a traveling wave pulse that accelerates and axially confines the heavy ion beam pulse. Acceleration scenarios with constant parameter helical lines are described which result in output energies of a single stage much larger than the several hundred kilovolt peak voltages on the line, with a goal of 3-5 MeV/meter acceleration gradients. The concept might be described crudely as an ''air core'' induction linac where the PFN is integrated into the beam line so the accelerating voltage pulse can move along with the ions to get voltage multiplication.

  9. Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

    Energy Technology Data Exchange (ETDEWEB)

    Echeverria, Elena; Enders, A.; Dowben, P.A. [University of Nebraska-Lincoln, Department of Physics and Astronomy, Lincoln, NE (United States); James, Robinson; Chiluwal, Umesh; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Kelber, Jeffry A. [University of North Texas, Department of Chemistry, Denton, TX (United States); Pasquale, Frank L. [University of North Texas, Department of Chemistry, Denton, TX (United States); Lam Research Corporation, PECVD Business Unit, Tualatin, OR (United States); Colon Santana, Juan A. [Center for Energy Sciences Research, Lincoln, NE (United States)

    2014-09-19

    Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B{sub 10}C{sub 2}H{sub X}), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials. (orig.)

  10. Analysis of NSTX TF Joint Voltage Measurements

    International Nuclear Information System (INIS)

    Woolley R

    2005-01-01

    This report presents findings of analyses of recorded current and voltage data associated with 72 electrical joints operating at high current and high mechanical stress. The analysis goal was to characterize the mechanical behavior of each joint and thus evaluate its mechanical supports. The joints are part of the toroidal field (TF) magnet system of the National Spherical Torus Experiment (NSTX) pulsed plasma device operating at the Princeton Plasma Physics Laboratory (PPPL). Since there is not sufficient space near the joints for much traditional mechanical instrumentation, small voltage probes were installed on each joint and their voltage monitoring waveforms have been recorded on sampling digitizers during each NSTX ''shot''

  11. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  12. A pulse amplitude discriminator with very low-power consuming

    International Nuclear Information System (INIS)

    Deng Changming; Liu Zhengshan; Zhang Zhiyong; Cheng Chang

    2000-01-01

    A low-power pulse amplitude discriminator is described. The discriminator circuit is mainly composed of an integrated voltage comparator, MAX921, and owns the characters of very low-power and low operating voltage

  13. Effect of high-voltage pulsed current plus conventional treatment on acute ankle sprain Efeito da adição da estimulação de alta voltagem ao tratamento convencional do entorse de tornozelo numa etapa aguda

    Directory of Open Access Journals (Sweden)

    Maria Cristina Sandoval

    2010-06-01

    Full Text Available BACKGROUND: The effectiveness of high-voltage pulsed current (HVPC treatments in humans as a means of controlling edema and post-traumatic pain has not yet been established. Objective: To analyze the effects of HVPC plus conventional treatment on lateral ankle sprains. METHODS: This was a randomized, controlled, double-blind clinical trial with three intervention groups: CG (control group with conventional treatment; HVPC(- group (conventional treatment plus negative polarity HVPC; HVPC(+ group (conventional treatment plus positive polarity HVPC. Twenty-eight participants with lateral ankle sprain (2 to 96h post-trauma were evaluated. Conventional treatment consisted of cryotherapy (20min plus therapeutic exercises. Additionally, the HVPC(- and HVPC(+ groups received 30min of electrical stimulation (submotor level; 120 pps. Pain, edema, range of motion (ROM and gait were assessed before the first treatment session and after the last treatment session. RESULTS: At the final evaluation, there were no significant differences between groups. Nevertheless, the HVPC(- group had greater values in all assessed parameters. The data analysis showed that the HVPC(- group had greater reductions in volume and girth, and greater recovery of ROM and gait velocity. This group also reached the end of the treatment (1.7 weeks; range 1.2-2.2 faster than the HVPC(+ group and the CG (2.2 weeks; range 1.8-2.6. CONCLUSIONS: There were no differences between the study groups, but the results suggest that HVPC(- can accelerate the initial phase of recovery from ankle sprain.CONTEXTUALIZAÇÃO: A eficácia da estimulação elétrica de alta voltagem (EEAV em humanos, como uma forma de tratamento para controlar o edema e a dor pós-traumáticos, ainda não foi estabelecida. OBJETIVO: Analisar o efeito da adição da EEAV ao tratamento convencional do pós-entorse de tornozelo em humanos. MÉTODOS: Ensaio clínico controlado e aleatorizado, duplo cego com três grupos de

  14. Modeling Photo-multiplier Gain and Regenerating Pulse Height Data for Application Development

    Science.gov (United States)

    Aspinall, Michael D.; Jones, Ashley R.

    2018-01-01

    Systems that adopt organic scintillation detector arrays often require a calibration process prior to the intended measurement campaign to correct for significant performance variances between detectors within the array. These differences exist because of low tolerances associated with photo-multiplier tube technology and environmental influences. Differences in detector response can be corrected for by adjusting the supplied photo-multiplier tube voltage to control its gain and the effect that this has on the pulse height spectra from a gamma-only calibration source with a defined photo-peak. Automated methods that analyze these spectra and adjust the photo-multiplier tube bias accordingly are emerging for hardware that integrate acquisition electronics and high voltage control. However, development of such algorithms require access to the hardware, multiple detectors and calibration source for prolonged periods, all with associated constraints and risks. In this work, we report on a software function and related models developed to rescale and regenerate pulse height data acquired from a single scintillation detector. Such a function could be used to generate significant and varied pulse height data that can be used to integration-test algorithms that are capable of automatically response matching multiple detectors using pulse height spectra analysis. Furthermore, a function of this sort removes the dependence on multiple detectors, digital analyzers and calibration source. Results show a good match between the real and regenerated pulse height data. The function has also been used successfully to develop auto-calibration algorithms.

  15. Investigation of the LAPPS Ion Flux to a Surface Biased with an Arbitrary High Frequency Waveform

    Science.gov (United States)

    Blackwell, David; Walton, Scott; Leonhardt, Darrin; Murphy, Donald; Fernsler, Richard; Meger, Robert

    2001-10-01

    Materials etching using accelerated ions has become a widely used procedure in the semiconductor industry. Typically the substrate is biased with high frequency voltage waveforms, which cause the substrate to acquire a negative DC voltage to accelerate the ions. However, the ions do not reach the substrate as a monoenergetic beam. The ion energy distribution function (IEDF) is profoundly influenced by the frequency and shape of the applied waveform. At NRL, we have been experimenting with electron-beam produced plasmas as an alternative to radiofrequency (RF) driven discharges. The most promising of these sources is the hollow cathode driven \\underlineLarge \\underlineArea \\underlinePlasma \\underlineProcessing \\underlineSystem. This source is designed to produce large area (> 1 m^2), high density, uniform sheets of plasma. In this presentation we will show measurements of the ion energy distribution function (IEDF) from continuous and pulsed electron beam plasmas produced in 20-30 cm wide × 1 cm thick sheets by a 2 kV hollow cathode. The IEDF is obtained using a gridded energy analyzer incorporated into a biasable stage. The surface flux and IEDF as a function of the waveform input to the stage will be investigated by using various types of pulse functions and variable frequency RF voltages. Typical operating conditions are 15-20 millitorr of argon, oxygen, or nitrogen, and 150-200 Gauss magnetic field.

  16. A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

    Science.gov (United States)

    Yan Lu; Wing-Hung Ki

    2014-06-01

    A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

  17. Low power arcjet thruster pulse ignition

    Science.gov (United States)

    Sarmiento, Charles J.; Gruber, Robert P.

    1987-01-01

    An investigation of the pulse ignition characteristics of a 1 kW class arcjet using an inductive energy storage pulse generator with a pulse width modulated power converter identified several thruster and pulse generator parameters that influence breakdown voltage including pulse generator rate of voltage rise. This work was conducted with an arcjet tested on hydrogen-nitrogen gas mixtures to simulate fully decomposed hydrazine. Over all ranges of thruster and pulser parameters investigated, the mean breakdown voltages varied from 1.4 to 2.7 kV. Ignition tests at elevated thruster temperatures under certain conditions revealed occasional breakdowns to thruster voltages higher than the power converter output voltage. These post breakdown discharges sometimes failed to transition to the lower voltage arc discharge mode and the thruster would not ignite. Under the same conditions, a transition to the arc mode would occur for a subsequent pulse and the thruster would ignite. An automated 11 600 cycle starting and transition to steady state test demonstrated ignition on the first pulse and required application of a second pulse only two times to initiate breakdown.

  18. Experimental Observation of RF Radiation Generated by an Explosively Driven Voltage Generator

    National Research Council Canada - National Science Library

    Rader, Mark S; Sullivan, Carol; Andreadis, Tim D

    2005-01-01

    .... located in Rolla, Missouri. A pulse-forming network and transmitting antenna were constructed and attached to the voltage-pulse generator, and a matched receiving antenna was located approximately 3 m from the transmitting antenna...

  19. High-output microwave detector using voltage-induced ferromagnetic resonance

    International Nuclear Information System (INIS)

    Shiota, Yoichi; Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2014-01-01

    We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque

  20. Foundations of pulsed power technology

    CERN Document Server

    Lehr, Janet

    2018-01-01

    Pulsed power technologies could be an answer to many cutting-edge applications. The challenge is in how to develop this high-power/high-energy technology to fit current market demands of low-energy consuming applications. This book provides a comprehensive look at pulsed power technology and shows how it can be improved upon for the world of today and tomorrow. Foundations of Pulsed Power Technology focuses on the design and construction of the building blocks as well as their optimum assembly for synergetic high performance of the overall pulsed power system. Filled with numerous design examples throughout, the book offers chapter coverage on various subjects such as: Marx generators and Marx-like circuits; pulse transformers; pulse-forming lines; closing switches; opening switches; multi-gigawatt to multi-terawatt systems; energy storage in capacitor banks; electrical breakdown in gases; electrical breakdown in solids, liquids and vacuum; pulsed voltage and current measurements; electromagnetic interferen...

  1. Variation of microchannel plate resistance with temperature and applied voltage

    International Nuclear Information System (INIS)

    Pearson, J.F.; Fraser, G.W.; Whiteley, M.J.

    1987-01-01

    The resistance of microchannel plate electron multiplier is well known to be a function of both applied voltage and detector temperature. We show that the apparent variation of resistance with bias voltage is simply due to plate temperature increases resulting from resistive heating. (orig.)

  2. Quantifying transition voltage spectroscopy of molecular junctions: Ab initio calculations

    DEFF Research Database (Denmark)

    Chen, Jingzhe; Markussen, Troels; Thygesen, Kristian Sommer

    2010-01-01

    Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab initio calculations of the nonlinear current...

  3. High Bandwidth Zero Voltage Injection Method for Sensorless Control of PMSM

    DEFF Research Database (Denmark)

    Ge, Xie; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

    2014-01-01

    High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses to be inj......High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses...... in a fast current regulation performance. Injection of zero voltage also minimizes the inverter voltage error effects caused by the dead-time....

  4. Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

    Science.gov (United States)

    Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

    2018-05-01

    We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

  5. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  6. Powerful nanosecond pulse train generator

    International Nuclear Information System (INIS)

    Isakov, I.F.; Logachev, E.I.; Opekunov, M.S.; Pechenkin, S.A.; Remnev, G.E.; Usov, Yu.P.

    1987-01-01

    A generator permitting to shape on the load pulsed with the repetition frequency of 10 3 -10 6 Hz and more is described. The amplitude of shaped voltage pulses is up to 150 kV at pulse duration equal to 50 ns. The generator comprises connected in-series with the load two shaping and two transmission lines realized on the base of the KVI-300 low-ohmic cable. The shaping lines are supplied from two independently connected pulse voltage generators for obtaining time interval between pulses > 10 -6 s; they may be also supplied from one generator for obtaining time interval -6 s. At the expense of reducing losses in the discharge circuit the amplitude of the second pulse grows with increase of time interval between pulses up to 300 ns, further on the curve flat-topping exists. The described generator is used in high-current accelerators, in which the primary negative pulse results in generation of explosive-emission plasma, and the second positive pulse provides ion beam shaping including ions of heavy metal used for production of a potential electrode. The generator multipulse mode is used for successive ion acceleration in the transport system

  7. Shaping the spectra of the line-to-line voltage using signal injection in the common mode voltage

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Rasmussen, Peter Omand; Pedersen, John Kim

    2009-01-01

    A drawback of Pulse Width Modulation in electrical drives is the high harmonic content of the line to line voltages, which gives rise to Electro-Magnetic Interference and acoustic noise. By injection of a signal into the common mode voltage, the fundamental is not affected, but new frequency...

  8. Prediction of power losses in silicon iron sheets under PWM voltage supply

    International Nuclear Information System (INIS)

    Amar, M.; Kaczmarek, R.; Protat, F.

    1994-01-01

    The behavior of iron losses in silicon iron steels submitted to a PWM voltage is studied. The influence of modulation parameters (the depth of modulation and the number of eliminated harmonics) is clarified. In particular, the idea of an equivalent alternating pulse voltage that gives the same iron losses as the PWM voltage is established. An estimation formula for iron losses under the PWM voltage is developed based on the loss separation model and the voltage form factor. ((orig.))

  9. The harmonic composition of the output voltage of a rectifier unit with a PWM voltage booster converter.

    OpenAIRE

    ПАНЧЕНКО, В В

    2015-01-01

    The author investigates a rectifier unit constructed on the basis of cascade connection of the main non-controlled m-pulse rectifier and PWM voltage booster converter. The research presents the analysis of the harmonic composition of the output voltage of a rectifier unit with a PWM voltage booster converter on completely controlled keys. The dependence of the relative harmonic amplitude on the commutation corner is defined. The estimation of a rectifier unit electromagnetic compatibility wit...

  10. RIIM two-pulse injector experiments

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Jones, E.E.; Hasti, D.E.; Jojola, J.M.; Lehmann, M.

    1987-01-01

    The RADLAC-II foilless diode injector was operated under double pulse conditions utilizing the RIIM accelerator as the test bed. The original RIIM accelerator pulse-power network was modified to provide for the generation, transmission, and delivery to the foilless diode of two distinct voltage pulses with variable interpulse separation from 0 to 2 ms. Two pulse-power assemblies were investigated and will be presented in connection with the diode performance. In both cases, the generated plasma and an excessive neutral gas release, following the first pulse, prevented the diode from producing a second beam pulse for interpulse separations larger than ∼1 μs. 4 refs

  11. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  12. Pulsed rf operation analysis

    International Nuclear Information System (INIS)

    Puglisi, M.; Cornacchia, M.

    1981-01-01

    The need for a very low final amplifier output impedance, always associated with class A operation, requires a very large power waste in the final tube. The recently suggested pulsed rf operation, while saving a large amount of power, increases the inherent final amplifier non linearity. A method is presented for avoiding the large signal non linear analysis and it is shown how each component of the beam induced voltage depends upon all the beam harmonics via some coupling coefficients which are evaluated

  13. Development of the pulse transformer for NLC klystron pulse modulator

    International Nuclear Information System (INIS)

    Akemoto, M.; Gold, S.; Koontz, R.; Krasnykh, A.

    1997-05-01

    We have studied a conventional pulse transformer for the NLC klystron pulse modulator. The transformer has been analyzed using a simplified lumped circuit model. It is found that a fast rise time requires low leakage inductance and low distributed capacitance and can be realized by reducing the number of secondary turns, but it produces larger pulse droop and core size. After making a tradeoff among these parameters carefully, a conventional pulse transformer with a rise time of 250ns and pulse droop of 3.6% has been designed and built. The transmission characteristics and pulse time-response were measured. The data were compared with the model. The agreement with the model was good when the measured values were used in the model simulation. The results of the high voltage tests are also presented

  14. Pulse transformer R and D for NLC klystron pulse modulator

    International Nuclear Information System (INIS)

    Akemoto, M.; Gold, S.; Krasnykh, A.; Koontz, R.

    1997-07-01

    The authors have studied a conventional pulse transformer for the NLC klystron pulse modulator. The transformer has been analyzed using a simplified lumped circuit model. It is found that a fast rise time requires low leakage inductance and low distributed capacitance and can be realized by reducing the number of secondary turns, but it produces larger pulse droop and requires a larger core size. After making a tradeoff among these parameters carefully, a conventional pulse transformer with a rise time of 250ns and a pulse droop of 3.6% has been designed and built. The transmission characteristics and pulse time-response were measured. The data were compared with the model. The agreement with the model was good when the measured values were used in the model simulation. The results of the high voltage tests using a klystron load are also presented

  15. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  16. Design of pulse transformers for PFL charging

    International Nuclear Information System (INIS)

    Rohwein, G.J.

    1979-01-01

    Air core pulse transformers powered by low voltage capacitor banks can be simple efficient systems for charging high-voltage (0.5 to 3 MV), pulse forming transmission lines (PFL) such as those used in electron and ion beam accelerators. In these applications pulse transformers must have the combined capability of high voltage endurance and high energy transfer efficiency, particularly in repetitive pulse systems where these features are of primary importance. The design of shielded, high-voltage, spiral, strip transformers which fulfill these requirements is described in this paper. Transformers of this type have been tested in three systems which operate with greater than 90% transfer efficiency and have not failed in over 10 7 shots

  17. Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

    Science.gov (United States)

    Nozaki, Kengo; Matsuo, Shinji; Fujii, Takuro; Takeda, Koji; Shinya, Akihiko; Kuramochi, Eiichi; Notomi, Masaya

    2018-04-01

    Generally, reverse-biased photodetectors (PDs) are used for high-speed optical receivers. The forward voltage region is only utilized in solar-cells, and this photovoltaic operation would not be concurrently obtained with high efficiency and high speed operation. Here we report that photonic-crystal waveguide PDs enable forward-biased high-speed operation at 40 Gbit/s with keeping high responsivity (0.88 A/W). Within our knowledge, this is the first demonstration of the forward-biased PDs with high responsivity. This achievement is attributed to the ultracompactness of our PD and the strong light confinement within the absorber and depleted regions, thereby enabling efficient photo-carrier generation and fast extraction. This result indicates that it is possible to construct a high-speed and ultracompact photo-receiver without an electrical amplifier nor an external bias circuit. Since there is no electrical energy required, our estimation shows that the consumption energy is just the optical energy of the injected signal pulse which is about 1 fJ/bit. Hence, it will lead to an ultimately efficient and highly integrable optical-to-electrical converter in a chip, which will be a key ingredient for dense nanophotonic communication and processors.

  18. Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

    Directory of Open Access Journals (Sweden)

    Kengo Nozaki

    2018-04-01

    Full Text Available Generally, reverse-biased photodetectors (PDs are used for high-speed optical receivers. The forward voltage region is only utilized in solar-cells, and this photovoltaic operation would not be concurrently obtained with high efficiency and high speed operation. Here we report that photonic-crystal waveguide PDs enable forward-biased high-speed operation at 40 Gbit/s with keeping high responsivity (0.88 A/W. Within our knowledge, this is the first demonstration of the forward-biased PDs with high responsivity. This achievement is attributed to the ultracompactness of our PD and the strong light confinement within the absorber and depleted regions, thereby enabling efficient photo-carrier generation and fast extraction. This result indicates that it is possible to construct a high-speed and ultracompact photo-receiver without an electrical amplifier nor an external bias circuit. Since there is no electrical energy required, our estimation shows that the consumption energy is just the optical energy of the injected signal pulse which is about 1 fJ/bit. Hence, it will lead to an ultimately efficient and highly integrable optical-to-electrical converter in a chip, which will be a key ingredient for dense nanophotonic communication and processors.

  19. Rf-biasing of highly idealized plasmas

    NARCIS (Netherlands)

    Westermann, R.H.J.; Blauw, M.A.; Goedheer, W.J.; Sanden, van de M.C.M.; Schmidt, J.; Simek, M.; Pekarek, S.; Prukner, V.

    2007-01-01

    Remote plasmas, which are subjected to a radio-frequency (RF) biased surface, have been investigated theoretically and experimentally for decades. The relation between the complex power (DC) voltage characteristics, the ion energy distribution and control losses of the ion bombardment are of

  20. Excitation of voltage oscillations in an induction voltage adder

    Directory of Open Access Journals (Sweden)

    Nichelle Bruner

    2009-07-01

    Full Text Available The induction voltage adder is an accelerator architecture used in recent designs of pulsed-power driven x-ray radiographic systems such as Sandia National Laboratories’ Radiographic Integrated Test Stand (RITS, the Atomic Weapons Establishment’s planned Hydrus Facility, and the Naval Research Laboratory’s Mercury. Each of these designs relies on magnetic insulation to prevent electron loss across the anode-cathode gap in the vicinity of the adder as well as in the coaxial transmission line. Particle-in-cell simulations of the RITS adder and transmission line show that, as magnetic insulation is being established during a pulse, some electron loss occurs across the gap. Sufficient delay in the cavity pulse timings provides an opportunity for high-momentum electrons to deeply penetrate the cavities of the adder cells where they can excite radio-frequency resonances. These oscillations may be amplified in subsequent gaps, resulting in oscillations in the output power. The specific modes supported by the RITS-6 accelerator and details of the mechanism by which they are excited are presented in this paper.

  1. Response of YBa2Cu3O7-δ grain-boundary junctions to short light pulses

    International Nuclear Information System (INIS)

    Kaplan, S.B.; Chi, C.C.; Chaudhari, P.; Dimos, D.; Gross, R.; Gupta, A.; Koren, G.

    1991-01-01

    The electrical response of a single YBa 2 Cu 3 O 7-δ grain-boundary junction to visible light pulses was measured. Using an autocorrelation technique with picosecond laser pulses, no fast voltage transients were observed with the junction biased just above its critical current. Apparently, there are no relaxation times in the range of 7 ps to 14 ns. Using direct time-domain measurement with nanosecond pulses, three types of junction response were recorded: a nonexponential decay of 11 μs (90 to 10 % time) at temperatures near T c ; an inverse-time dependence of the order of 0.3 μs (100 to 50 % time) in the temperature range of 4.2 to 15 K; and an exponential decay time of 0.15 μs with the sample immersed in superfluid helium

  2. High voltage switch triggered by a laser-photocathode subsystem

    Science.gov (United States)

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  3. Pulse Generator

    Science.gov (United States)

    Greer, Lawrence (Inventor)

    2017-01-01

    An apparatus and a computer-implemented method for generating pulses synchronized to a rising edge of a tachometer signal from rotating machinery are disclosed. For example, in one embodiment, a pulse state machine may be configured to generate a plurality of pulses, and a period state machine may be configured to determine a period for each of the plurality of pulses.

  4. Neutral-point voltage dynamic model of three-level NPC inverter for reactive load

    DEFF Research Database (Denmark)

    Maheshwari, Ram Krishan; Munk-Nielsen, Stig; Busquets-Monge, Sergio

    2012-01-01

    A three-level neutral-point-clamped inverter needs a controller for the neutral-point voltage. Typically, the controller design is based on a dynamic model. The dynamic model of the neutral-point voltage depends on the pulse width modulation technique used for the inverter. A pulse width modulati...

  5. Voltage Quench Dynamics of a Kondo System.

    Science.gov (United States)

    Antipov, Andrey E; Dong, Qiaoyuan; Gull, Emanuel

    2016-01-22

    We examine the dynamics of a correlated quantum dot in the mixed valence regime. We perform numerically exact calculations of the current after a quantum quench from equilibrium by rapidly applying a bias voltage in a wide range of initial temperatures. The current exhibits short equilibration times and saturates upon the decrease of temperature at all times, indicating Kondo behavior both in the transient regime and in the steady state. The time-dependent current saturation temperature connects the equilibrium Kondo temperature to a substantially increased value at voltages outside of the linear response. These signatures are directly observable by experiments in the time domain.

  6. Tunable pulse-shaping with gated graphene nanoribbons

    DEFF Research Database (Denmark)

    Prokopeva, Ludmila; Emani, Naresh K.; Boltasseva, Alexandra

    2014-01-01

    We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed.......We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed....

  7. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  8. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    Science.gov (United States)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  9. A system for biasing a differential amplifier

    International Nuclear Information System (INIS)

    Barbier, Daniel; Ittel, J.M.; Poujois, Robert

    1975-01-01

    This invention concerns a system for biasing a differential amplifier. It particularly applies to the integrated differential amplifiers designed with MOS field effect transistors. Variations in the technological parameters may well cause the amplifying transistors to work outside their usual operational area, in other words outside the linear part of the transfer characteristic. To ensure that these transistors function correctly, it is necessary that the value of the voltage difference at the output be equally null. To do this and to centre on the so called 'rest' point of the amplifier transfer charateristic, the condition will be set that the output potentials of each amplifier transistor should have a zero value or a constant value as sum. With this in view, the bias on the source (generally a transistor powered by its grid bias voltage) supplying current to the two amplifying transistors fitted in parallel, is permanently adjusted in a suitable manner [fr

  10. Wide-range voltage modulation

    International Nuclear Information System (INIS)

    Rust, K.R.; Wilson, J.M.

    1992-06-01

    The Superconducting Super Collider's Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-μs wide pulse with a rise time of less than 1 μs, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented

  11. Bias against research on gender bias.

    Science.gov (United States)

    Cislak, Aleksandra; Formanowicz, Magdalena; Saguy, Tamar

    2018-01-01

    The bias against women in academia is a documented phenomenon that has had detrimental consequences, not only for women, but also for the quality of science. First, gender bias in academia affects female scientists, resulting in their underrepresentation in academic institutions, particularly in higher ranks. The second type of gender bias in science relates to some findings applying only to male participants, which produces biased knowledge. Here, we identify a third potentially powerful source of gender bias in academia: the bias against research on gender bias. In a bibliometric investigation covering a broad range of social sciences, we analyzed published articles on gender bias and race bias and established that articles on gender bias are funded less often and published in journals with a lower Impact Factor than articles on comparable instances of social discrimination. This result suggests the possibility of an underappreciation of the phenomenon of gender bias and related research within the academic community. Addressing this meta-bias is crucial for the further examination of gender inequality, which severely affects many women across the world.

  12. Regulation and drive system for high rep-rate magnetic-pulse compressors

    International Nuclear Information System (INIS)

    Birx, D.L.; Cook, E.G.; Hawkins, S.; Meyers, A.; Reginato, L.L.; Schmidt, J.A.; Smith, M.W.

    1982-01-01

    The essentially unlimited rep-rate capability of non-linear magnetic systems has imposed strict requirements on the drive system which initiates the pulse compression. An order of magnitude increase in the rep-rates achieved by the Advanced Test Accelerator (ATA) gas blown system is not difficult to achieve in the magnetic compressor. The added requirement of having a high degree of regulation at the higher rep-rates places strict requirements on the triggerable switch for charging and de-Queing. A novel feedback technique which applies the proper bias to a magnetic core by comparing a reference voltage to the charging voltage eases considerably the regulation required to achieve low jitter in magnetic compression. The performance of the high rep-rate charging and regulation systems will be described in the following pages

  13. A compact nanosecond pulse generator for DBD tube characterization

    Science.gov (United States)

    Rai, S. K.; Dhakar, A. K.; Pal, U. N.

    2018-03-01

    High voltage pulses of very short duration and fast rise time are required for generating uniform and diffuse plasma under various operating conditions. Dielectric Barrier Discharge (DBD) has been generated by high voltage pulses of short duration and fast rise time to produce diffuse plasma in the discharge gap. The high voltage pulse power generators have been chosen according to the requirement for the DBD applications. In this paper, a compact solid-state unipolar pulse generator has been constructed for characterization of DBD plasma. This pulsar is designed to provide repetitive pulses of 315 ns pulse width, pulse amplitude up to 5 kV, and frequency variation up to 10 kHz. The amplitude of the output pulse depends on the dc input voltage. The output frequency has been varied by changing the trigger pulse frequency. The pulsar is capable of generating pulses of positive or negative polarity by changing the polarity of pulse transformer's secondary. Uniform and stable homogeneous dielectric barrier discharge plasma has been produced successfully in a xenon DBD tube at 400-mbar pressure using the developed high voltage pulse generator.

  14. Development of 600 kV triple resonance pulse transformer.

    Science.gov (United States)

    Li, Mingjia; Zhang, Faqiang; Liang, Chuan; Xu, Zhou

    2015-06-01

    In this paper, a triple-resonance pulse transformer based on an air-core transformer is introduced. The voltage across the high-voltage winding of the air-core transformer is significantly less than the output voltage; instead, the full output voltage appears across the tuning inductor. The maximum ratio of peak load voltage to peak transformer voltage is 2.77 in theory. By analyzing pulse transformer's lossless circuit, the analytical expression for the output voltage and the characteristic equation of the triple-resonance circuit are presented. Design method for the triple-resonance pulse transformer (iterated simulation method) is presented, and a triple-resonance pulse transformer is developed based on the existing air-core transformer. The experimental results indicate that the maximum ratio of peak voltage across the load to peak voltage across the high-voltage winding of the air-core transformer is approximately 2.0 and the peak output voltage of the triple-resonance pulse transformer is approximately 600 kV.

  15. Synchronised Voltage Space Vector Modulation for Three-level Inverters with Common-mode Voltage Elimination

    DEFF Research Database (Denmark)

    Oleschuk, Valentin; Blaabjerg, Frede

    2002-01-01

    A novel method of direct synchronous pulse-width modulation (PWM) is disseminated to three-level voltage source inverters with control algorithms with elimination of the common-mode voltages in three-phase drive systems with PWM. It provides smooth pulses-ratio changing and a quarter-wave symmetry...... of the voltage waveforms during the whole control range including overmodulation. Continuous, discontinuous and "direct-direct" schemes of synchronous PWM with both algebraic and trigonometric control functions have been analysed and compared. Simulations give the behaviour of the proposed methods and show some...... advantages of synchronous PWM in comparison with asynchronous at low ratios between the switching frequency and fundamental frequency....

  16. Substrate bias voltage and deposition temperature dependence on ...

    Indian Academy of Sciences (India)

    Thin films or a coating of any sort prior to its application into real world has to be studied for the dependence of ..... For line focusing, incident beam mask was employed with ..... org/content/avs/journal/jvst/11/4/10.1116/1.1312732. Thornton J A ...

  17. High current transistor pulse generator

    International Nuclear Information System (INIS)

    Nesterov, V.; Cassel, R.

    1991-05-01

    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

  18. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  19. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  20. Controllable pulse parameter transcranial magnetic stimulator with enhanced circuit topology and pulse shaping

    Science.gov (United States)

    Peterchev, Angel V.; DʼOstilio, Kevin; Rothwell, John C.; Murphy, David L.

    2014-10-01

    Objective. This work aims at flexible and practical pulse parameter control in transcranial magnetic stimulation (TMS), which is currently very limited in commercial devices. Approach. We present a third generation controllable pulse parameter device (cTMS3) that uses a novel circuit topology with two energy-storage capacitors. It incorporates several implementation and functionality advantages over conventional TMS devices and other devices with advanced pulse shape control. cTMS3 generates lower internal voltage differences and is implemented with transistors with a lower voltage rating than prior cTMS devices. Main results. cTMS3 provides more flexible pulse shaping since the circuit topology allows four coil-voltage levels during a pulse, including approximately zero voltage. The near-zero coil voltage enables snubbing of the ringing at the end of the pulse without the need for a separate active snubber circuit. cTMS3 can generate powerful rapid pulse sequences (\\lt 10 ms inter pulse interval) by increasing the width of each subsequent pulse and utilizing the large capacitor energy storage, allowing the implementation of paradigms such as paired-pulse and quadripulse TMS with a single pulse generation circuit. cTMS3 can also generate theta (50 Hz) burst stimulation with predominantly unidirectional electric field pulses. The cTMS3 device functionality and output strength are illustrated with electrical output measurements as well as a study of the effect of pulse width and polarity on the active motor threshold in ten healthy volunteers. Significance. The cTMS3 features could extend the utility of TMS as a research, diagnostic, and therapeutic tool.