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Sample records for bi-sb in-mg in-sb

  1. Reduction in thermal conductivity of BiSbTe lump

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

    2017-03-15

    In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

  2. The Quantum Chemistry Calculation and Thermoelectrics of Bi-Sb-Te Series

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The density function theory and discrete variation method(DFT-DVM) was used to study correlation between composition, structure, chemical bond,and property of thermoelectrics of Bi-Sb-Te series.8 models of Bi20-xSbxTe32(x=0,2,6,8,12,14,18 and 20) were calculated.The results show that there is less difference in the ionic bonds between Te(Ⅰ)-Bi(Sb) and Te(Ⅱ)-Bi(Sb), but the covalent bond of Te(Ⅰ)-Bi(Sb) is stronger than that of Te(Ⅱ)-Bi(Sb).The interaction between Te(Ⅰ) and Te(Ⅰ) in different layers is the weakest and the interaction should be Van Der Waals power.The charge of Sb is lower than that of Bi,and the ionic bond of Te-Sb is weaker than that of Te-Bi.The covalent bond of Te-Sb is also weaker than that of Te-Bi.Therefore,the thermoelectric property may be improved by adjusting the electrical conductivity and thermal conductivity through changing the composition in the compounds of Bi-Sb-Te. The calculated results are consistent with the experiments.

  3. Thermoelectric properties of quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2014-01-25

    Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound. -- Abstract: The quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data.

  4. Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound

    International Nuclear Information System (INIS)

    Lu, Pengfei; Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia; Wang, Shumin

    2014-01-01

    Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb) 2 (Te,Se) 3 compound. -- Abstract: The quaternary (Bi,Sb) 2 (Te,Se) 3 compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data

  5. Evidence for surface-generated photocurrent in (Bi,Sb)2Se3and(Bi,Sb)2Te3 thin films

    Science.gov (United States)

    Pan, Yu; Richardella, Anthony; Yao, Bing; Lee, Joon Sue; Flanagan, Thomas; Kandala, Abhinav; Samarth, Nitin; Yeats, Andrew; Mintun, Peter; Awschalom, David

    2015-03-01

    Illumination with circularly polarized light is known produce a helicity-dependent photocurrent in topological insulators such as Bi2Se3 [e.g. Nature Nanotech. 7, 96 (2012)]. However, the exact origin of this effect is still unclear since it is observed with photons well above the bulk band gap. We report measurements of the polarization-dependent photocurrent in a series of (Bi,Sb)2Se3 thin films with different carrier concentrations and find that the photocurrent is enhanced as we increase the population of the surface states. This finding is supported by a study of helicity-dependent photocurrents in back-gated (Bi,Sb)2Te3 thin films, where the chemical potential is varied electrostatically. By illuminating our samples at different wavelengths, we show that the helicity-dependent photocurrent is enhanced when the photon energy approaches the energy difference between the lowest and first excited (unoccupied) topological surface states. This leads us to attribute the helicity-dependent photocurrent in topological insulators to optical excitations between these two spin-textured surface states. We will also discuss experiments imaging the spatial variation of these helicity-dependent photocurrents. This work is supported by ONR.

  6. The microstructure network and thermoelectric properties of bulk (Bi,Sb)2Te3

    DEFF Research Database (Denmark)

    Xie, Wenjie; Hitchcock, Dale A.; Kang, Hye J.

    2012-01-01

    We report small-angle neutron scattering studies on the microstructure network in bulk (Bi,Sb)(2)Te-3 synthesized by the melt-spinning (MS) and the spark-plasma-sintering (SPS) process. We find that rough interfaces of multiscale microstructures generated by the MS are responsible for the large...... reduction of both lattice thermal conductivity and electrical conductivity. Our study also finds that subsequent SPS forms a microstructure network of similar to 10 nm thick lamellae and smooth interfaces between them. This nanoscale microstructure network with smooth interfaces increases electrical...... conductivity while keeping a low thermal conductivity, making it an ideal microstructure for high thermoelectric efficiency....

  7. Development of Bi-Sb-Te ternary alloy with compositionally graded structure

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, A; Ohta, T

    1997-07-01

    Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

  8. Study of the circular photo-galvanic effect in electrically gated (Bi,Sb)2Te3 thin films

    Science.gov (United States)

    Pan, Yu; Pillsbury, Timothy; Richardella, Anthony; Flanagan, Thomas; Samarth, Nitin

    Illumination with circularly polarized light is known to produce a helicity dependent photocurrent in topological insulators such as Bi2Se3 [Nature Nanotech. 7, 96 (2012)]. Symmetry considerations suggest that this ``circular photo-galvanic effect'' (CPGE) arises purely from the surface. However, whether or not the CPGE is directly related to optical excitations from the helical surface states is still under debate. To clarify the origin of the CPGE, we first compare the helicity dependent photocurrent in intrinsic (Bi,Sb)2Te3 to Cr doped (Bi,Sb)2Te3 thin films in which the Dirac surface states are perturbed by magnetic coupling. Secondly, we discuss the tunable CPGE in electrically gated (Bi,Sb)2Te3 thin films excited by optical excitations at different wavelengths. The dependence on the chemical potential and the photon energy of the excitation unveils the origin of the CPGE. Funded by ONR.

  9. Detection of current-induced spin polarization in BiSbTeSe{sub 2} toplogical insulator

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Fan; Ghatak, Subhamoy; Taskin, Alexey; Ando, Yoichi [Institute of Physics II, University of Cologne (Germany); Ando, Yuichiro [Department of Electronic Science and Engineering, Kyoto University (Japan)

    2016-07-01

    Topological insulators (TIs) are a class of quantum matter which possess spin-momentum-locked Dirac Fermions on the surfaces. Due to the spin-momentum locking, spin polarization will be induced when a charge current flows through the surface of a TI. Such spin polarization can be detected by using a ferromagnetic tunneling contact as a detector. In this talk, we present our results measured in devices fabricated from BiSbTeSe{sub 2} flakes. Spin signals were observed in both n-type and p-type BiSbTeSe{sub 2} samples.

  10. Intrinsic Instability of Cs2In(I)M(III)X6 (M = Bi, Sb; X = Halogen) Double Perovskites: A Combined Density Functional Theory and Experimental Study.

    Science.gov (United States)

    Xiao, Zewen; Du, Ke-Zhao; Meng, Weiwei; Wang, Jianbo; Mitzi, David B; Yan, Yanfa

    2017-05-03

    Recently, there has been substantial interest in developing double-B-cation halide perovskites, which hold the potential to overcome the toxicity and instability issues inherent within emerging lead halide-based solar absorber materials. Among all double perovskites investigated, In(I)-based Cs 2 InBiCl 6 and Cs 2 InSbCl 6 have been proposed as promising thin-film photovoltaic absorber candidates, with computational examination predicting suitable materials properties, including direct bandgap and small effective masses for both electrons and holes. In this study, we report the intrinsic instability of Cs 2 In(I)M(III)X 6 (M = Bi, Sb; X = halogen) double perovskites by a combination of density functional theory and experimental study. Our results suggest that the In(I)-based double perovskites are unstable against oxidation into In(III)-based compounds. Further, the results show the need to consider reduction-oxidation (redox) chemistry when predicting stability of new prospective electronic materials, especially when less common oxidation states are involved.

  11. Homologous series of layered structures in binary and ternary Bi-Sb-Te-Se systems : Ab initio study

    NARCIS (Netherlands)

    Govaerts, K.; Sluiter, M.H.F.; Partoens, B.; Lamoen, D.

    2014-01-01

    In order to account explicitly for the existence of long-periodic layered structures and the strong structural relaxations in the most common binary and ternary alloys of the Bi-Sb-Te-Se system, we have developed a one-dimensional cluster expansion (CE) based on first-principles electronic structure

  12. Structure of molten Bi-Sb-alloys by means of neutron diffraction

    International Nuclear Information System (INIS)

    Lamparter, P.; Knoll, W.; Steeb, S.

    1976-01-01

    The structural investigations with melts can be subdivided into two groups: The first group contains molten metals and molten alloys, and one can state that the structure of molten metals and of molten alloys nowadays is rather well understood. Interference functions of molten metals may be described by a hard sphere model. This is valid also for molten alloys with statistical distribution. For the second group, namely molten non-metals and molecular melts, the interference functions as well as the pair correlation functions are very offen rather complicated and not well understood. The present study is concerned with the transition region between these two groups. It is shown that the melts of the Bi-Sb system exhibit a change from metallic to non-metallic structure. Regarding the experimental details: the experiments were done with the two-axes spectrometer D 4 at the high-flux reactor at Grenoble. The containers consisted of cylindrical quartz tubes with a wall thickness of 0.1 cm. The furnace consisted of a direct-heated vanadium tube. The wavelength of the neutrons was 0.695 A. The final result is that the structure in molten Bi-Sb-alloys consists of primitive tetrahedra with coordination number 3. There are less tetrahedra in molten Bi than in molten Sb. Also with rising temperature the number of tetrahedra decreases. It is shown how to compose the coordination numbers of two structures to get the observed coordination number. The observed values are always the mean values of the two structures. (orig./HK) [de

  13. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  14. Density functional study of BiSbTeSe{sub 2} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadpourrad, Zahra; Abolhassani, Mohammadreza [Department of Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2017-08-15

    In this work, using density functional theory calculations, we have investigated the band topology of bulk BiSbTeSe{sub 2} and its thin film electronic properties in several thicknesses. It is one member of the quaternary compounds Bi{sub 2-x}Sb{sub x}Te{sub 3-y}Se{sub y} (BSTS) with the best intrinsic bulk insulating behavior. Based on our calculations we have found that a band inversion at Γ-point is induced when spin-orbit coupling is turned on, with an energy gap of about 0.318 eV. The film thickness has an effect on the surface states such that a gap opens at Dirac point in 6 quintuple-layers film and with decrease in thickness, the magnitude of the gap increases. The atomic contributions have been mapped out for the first few layers of thin films to demonstrate the surface states. The relative charge density has been calculated layer-wise and the penetration depth of the surface states into the bulk region is found to be about 2.5-3.5 quintuple layers, depending on the termination species of thin films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Magnetic susceptibility of Dirac fermions, Bi-Sb alloys, interacting Bloch fermions, dilute nonmagnetic alloys, and Kondo alloys

    Energy Technology Data Exchange (ETDEWEB)

    Buot, Felix A., E-mail: fbuot@gmu.edu [Computational Materials Science Center, George Mason University, Fairfax, VA 22030 (United States); TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines); C& LB Research Institute, Carmen, Cebu 6005 (Philippines); Otadoy, Roland E.S.; Rivero, Karla B. [TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines)

    2017-03-01

    Wide ranging interest in Dirac Hamiltonian is due to the emergence of novel materials, namely, graphene, topological insulators and superconductors, the newly-discovered Weyl semimetals, and still actively-sought after Majorana fermions in real materials. We give a brief review of the relativistic Dirac quantum mechanics and its impact in the developments of modern physics. The quantum band dynamics of Dirac Hamiltonian is crucial in resolving the giant diamagnetism of bismuth and Bi-Sb alloys. Quantitative agreement of the theory with the experiments on Bi-Sb alloys has been achieved, and physically meaningful contributions to the diamagnetism has been identified. We also treat relativistic Dirac fermion as an interband dynamics in uniform magnetic fields. For the interacting Bloch electrons, the role of translation symmetry for calculating the magnetic susceptibility avoids any approximation to second order in the field. The expressions for magnetic susceptibility of dilute nonmagnetic alloys give a firm theoretical foundation of the empirical formulas used in fitting experimental results. The unified treatment of all the above calculations is based on the lattice Weyl-Wigner formulation of discrete phase-space quantum mechanics. For completeness, the magnetic susceptibility of Kondo alloys is also given since Dirac fermions in conduction band and magnetic impurities exhibit Kondo effect.

  16. Enhanced thermoelectric figure-of-merit in Bi-Sb-Te nanocomposites with homogenously dispersed oxide ceramic ZrO2 nanoparticles

    Science.gov (United States)

    Madavali, B.; Kim, H. S.; Lee, K. H.; Hong, S. J.

    2017-06-01

    In this research, p-type BiSbTe/ZrO2 nanocomposite powders were fabricated by high-energy ball milling. Different weight percentages of ZrO2 (2, 4, and 6 wt. %) nanoparticles were incorporated into the bulk (BiSbTe) matrix by consolidation of as-synthesized nanocomposites (NCs) powder by spark plasma sintering at 673 K. The phase and existence of ZrO2 nano-inclusions was confirmed by X-ray diffraction and transmission electron microscopy-selected area electron diffraction analysis. The Seebeck coefficient of the BiSbTe/ZrO2 NCs was significantly improved (˜36% for 4 wt. % added NCs) by a decrease in the carrier concentration and energy filtering effect, whereas the thermal conductivity was much reduced via strong scattering of carriers/phonons. The peak thermoelectric figure-of-merit (1.34 ± 0.06) was obtained for BiSbTe into which 2 wt. % ZrO2 was dispersed, which was approximately 20% greater than that of the undispersed sample. The hardness of the nanocomposites was significantly improved (˜27%) due to grain-boundary hardening and a dispersion strengthening mechanism.

  17. Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2

    NARCIS (Netherlands)

    Li, C.; De Ronde, B.; Nikitin, A.; Huang, Y.; Golden, M.S.; De Visser, A.; Brinkman, A.

    2017-01-01

    The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the

  18. Pressure-induced phase transition and octahedral tilt system change of Ba2BiSbO6

    International Nuclear Information System (INIS)

    Lufaso, Michael W.; Macquart, Rene B.; Lee, Yongjae; Vogt, Thomas; Loye, Hans-Conrad zur

    2006-01-01

    High-resolution X-ray synchrotron powder diffraction studies under high-pressure conditions are reported for the ordered double perovskite Ba 2 BiSbO 6 . Near 4GPa, the oxide undergoes a pressure-induced phase transition. The symmetry of the material changes during the phase transition from space group R3-bar to space group I2/m, which is consistent with a change in the octahedral tilting distortion from an a - a - a - type to a 0 b - b - type using the Glazer notation. A fit of the volume-pressure data using the Birch-Murnagaham equation of state yielded a bulk modulus of 144(8)GPa for the rhombohedral phase

  19. Thermal Stability of Zone Melting p-Type (Bi, Sb)2Te3 Ingots and Comparison with the Corresponding Powder Metallurgy Samples

    Science.gov (United States)

    Jiang, Chengpeng; Fan, Xi'an; Hu, Jie; Feng, Bo; Xiang, Qiusheng; Li, Guangqiang; Li, Yawei; He, Zhu

    2018-04-01

    During the past few decades, Bi2Te3-based alloys have been investigated extensively because of their promising application in the area of low temperature waste heat thermoelectric power generation. However, their thermal stability must be evaluated to explore the appropriate service temperature. In this work, the thermal stability of zone melting p-type (Bi, Sb)2Te3-based ingots was investigated under different annealing treatment conditions. The effect of service temperature on the thermoelectric properties and hardness of the samples was also discussed in detail. The results showed that the grain size, density, dimension size and mass remained nearly unchanged when the service temperature was below 523 K, which suggested that the geometry size of zone melting p-type (Bi, Sb)2Te3-based materials was stable below 523 K. The power factor and Vickers hardness of the ingots also changed little and maintained good thermal stability. Unfortunately, the thermal conductivity increased with increasing annealing temperature, which resulted in an obvious decrease of the zT value. In addition, the thermal stabilities of the zone melting p-type (Bi, Sb)2Te3-based materials and the corresponding powder metallurgy samples were also compared. All evidence implied that the thermal stabilities of the zone-melted (ZMed) p-type (Bi, Sb)2Te3 ingots in terms of crystal structure, geometry size, power factor (PF) and hardness were better than those of the corresponding powder metallurgy samples. However, their thermal stabilities in terms of zT values were similar under different annealing temperatures.

  20. Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

    Science.gov (United States)

    Fan, Xi‧an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng; Rong, Zhen zhou; Yang, Fan; Li, Guang qiang

    2016-01-01

    Bi2Te3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi2Te3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb)2Te3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb)2Te3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi0.44Sb1.56Te3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi0.36Sb1.64Te3 and Bi0.4Sb1.6Te3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi2Te3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers.

  1. Thermal Stability of P-Type BiSbTe Alloys Prepared by Melt Spinning and Rapid Sintering

    Directory of Open Access Journals (Sweden)

    Yun Zheng

    2017-06-01

    Full Text Available P-type BiSbTe alloys have been widely implemented in waste heat recovery from low-grade heat sources below 600 K, which may involve assorted environments and conditions, such as long-term service, high-temperature exposure (generally 473–573 K and mechanical forces. It is important to evaluate the service performance of these materials in order to prevent possible failures in advance and extend the life cycle. In this study, p-type Bi0.5Sb1.5Te3 commercial zone-melting (ZM ingots were processed by melt spinning and subsequent plasma-activated sintering (MS-PAS, and were then subjected to vacuum-annealing at 473 and 573 K, respectively, for one week. The results show that MS-PAS samples exhibit excellent thermal stability when annealed at 473 K. However, thermal annealing at 573 K for MS-PAS specimens leads to the distinct sublimation of the element Te, which degrades the hole concentration remarkably and results in inferior thermoelectric performance. Furthermore, MS-PAS samples annealed at 473 K demonstrate a slight enhancement in flexural and compressive strengths, probably due to the reduction of residual stress induced during the sintering process. The current work guides the reliable application of p-type Bi0.5Sb1.5Te3 compounds prepared by the MS-PAS technique.

  2. Magneto-optical Kerr effect in Cr-doped (Bi,Sb)2Te3 Thin Films

    Science.gov (United States)

    Pan, Yu; Yao, Bing; Richardella, Anthony; Kandala, Abhinav; Fraleigh, Robert; Lee, Joon Sue; Samarth, Nitin; Yeats, Andrew; Awschalom, David D.

    2014-03-01

    When a three-dimensional (3D) topological insulator (TI) is interfaced with magnetism, the breaking of time reversal symmetry results in new phenomena such as the recently observed quantum anomalous Hall effect [C.-Z. Zhang et al., Science340, 167 (2013)]. Thus motivated, we use the polar-mode magneto-optical Kerr effect (MOKE) to probe the temperature- and field-dependent magnetization in molecular beam epitaxy grown Cr-doped thin films of the 3D TI (Bi,Sb)2Te3. Square MOKE hysteresis loops observed at low temperatures indicate robust ferromagnetism with a perpendicular magnetic anisotropy and Curie temperature that varies from ~ 5 K to ~ 150 K, depending on sample details. A key question is the nature of the ferromagnetism: is it a carrier-mediated mechanism, Van Vleck mechanism or due to extrinsic clusters? We address this issue by varying the magnetic ion concentration and carrier density via sample composition as well as by varying the chemical potential by back gating. Finally, we use spatially-resolved MOKE to image the magnetization in these samples. Supported by ONR and DARPA.

  3. Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

    Science.gov (United States)

    Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

    2017-10-01

    We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

  4. Evolution of thermoelectric performance for (Bi,Sb){sub 2}Te{sub 3} alloys from cutting waste powders to bulks with high figure of merit

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Xi' an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Cai, Xin zhi, E-mail: xzcwust@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Han, Xue wu, E-mail: hanxuewu1990@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Zhang, Cheng cheng, E-mail: zcc516990418@live.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); and others

    2016-01-15

    Bi{sub 2}Te{sub 3} based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi{sub 2}Te{sub 3} based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb){sub 2}Te{sub 3} alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb){sub 2}Te{sub 3} alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi{sub 0.44}Sb{sub 1.56}Te{sub 3} was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi{sub 0.36}Sb{sub 1.64}Te{sub 3} and Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi{sub 2}Te{sub 3} based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi{sub 2}Te{sub 3} based wastes were directly selected as raw materials

  5. Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

    International Nuclear Information System (INIS)

    Fan, Xi'an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng

    2016-01-01

    Bi 2 Te 3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi 2 Te 3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb) 2 Te 3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb) 2 Te 3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi 0.44 Sb 1.56 Te 3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi 0.36 Sb 1.64 Te 3 and Bi 0.4 Sb 1.6 Te 3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi 2 Te 3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi 2 Te 3 based wastes were directly selected as raw materials for TE alloys. • Contaminants from cutting fluid and oxides could be effectively removed.

  6. Evaluation of the effect of Bi, Sb, Sr and cooling condition on eutectic phases in an Al–Si–Cu alloy (ADC12) by in situ thermal analysis

    Energy Technology Data Exchange (ETDEWEB)

    Farahany, S., E-mail: saeedfarahany@gmail.com [Department of Materials Engineering, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Johor Bahru (Malaysia); Ourdjini, A.; Idrsi, M.H. [Department of Materials Engineering, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Johor Bahru (Malaysia); Shabestari, S.G. [Center of Excellence for High Strength Alloys Technology (CEHSAT), School of Metallurgy and Materials Engineering, Iran University of Science and Technology (IUST), 16846-13114 Tehran (Iran, Islamic Republic of)

    2013-05-10

    Highlights: • Combined effect of Bi, Sb and Sr additions, and cooling condition was evaluated. • Two different scenarios of recalecense in response to cooling rate were observed. • Fraction solid increased in the order of Sr > Bi > Sb, corresponds to Si morphologies. • Only Bi decreased the nucleation temperature of Al{sub 2}Cu eutectic phase. - Abstract: Al–Si and Al–Cu eutectic phases strongly affect the properties of Al–Si–Cu cast alloys. The characteristic parameters of these two eutectic phases with addition of bismuth, antimony and strontium under different cooling rates (0.6–2 °C/s) were investigated in ADC12 alloy using in situ thermal analysis. Results show that additives affect the Al–Si phase more than the Al–Cu (Al{sub 2}Cu) phase. Addition elements showed two different scenarios in response to cooling rate in terms of recalescence of the Al–Si eutectic phase. Both Bi and Sb caused an increase in recalescence with increased cooling rate but Sr addition reduced the recalescence. Additions of Sb and Sr increased the nucleation temperature of Al{sub 2}Cu, but addition of Bi produced an opposite effect. There seems to be relationship between the solidification temperature range and fraction solid of Al–Si and Al{sub 2}Cu eutectic phases. As the cooling rate increases the fraction solid of Al–Si decreased and that of Al{sub 2}Cu increased.

  7. Evaluation of the effect of Bi, Sb, Sr and cooling condition on eutectic phases in an Al–Si–Cu alloy (ADC12) by in situ thermal analysis

    International Nuclear Information System (INIS)

    Farahany, S.; Ourdjini, A.; Idrsi, M.H.; Shabestari, S.G.

    2013-01-01

    Highlights: • Combined effect of Bi, Sb and Sr additions, and cooling condition was evaluated. • Two different scenarios of recalecense in response to cooling rate were observed. • Fraction solid increased in the order of Sr > Bi > Sb, corresponds to Si morphologies. • Only Bi decreased the nucleation temperature of Al 2 Cu eutectic phase. - Abstract: Al–Si and Al–Cu eutectic phases strongly affect the properties of Al–Si–Cu cast alloys. The characteristic parameters of these two eutectic phases with addition of bismuth, antimony and strontium under different cooling rates (0.6–2 °C/s) were investigated in ADC12 alloy using in situ thermal analysis. Results show that additives affect the Al–Si phase more than the Al–Cu (Al 2 Cu) phase. Addition elements showed two different scenarios in response to cooling rate in terms of recalescence of the Al–Si eutectic phase. Both Bi and Sb caused an increase in recalescence with increased cooling rate but Sr addition reduced the recalescence. Additions of Sb and Sr increased the nucleation temperature of Al 2 Cu, but addition of Bi produced an opposite effect. There seems to be relationship between the solidification temperature range and fraction solid of Al–Si and Al 2 Cu eutectic phases. As the cooling rate increases the fraction solid of Al–Si decreased and that of Al 2 Cu increased

  8. Hydride generation atomic fluorescence spectrometric determination of As, Bi, Sb, Se(IV) and Te(IV) in aqua regia extracts from atmospheric particulate matter using multivariate optimization

    International Nuclear Information System (INIS)

    Moscoso-Perez, Carmen; Moreda-Pineiro, Jorge; Lopez-Mahia, Purificacion; Muniategui-Lorenzo, Soledad; Fernandez-Fernandez, Esther; Prada-Rodriguez, Dario

    2004-01-01

    A highly sensitive and simple method, based on hydride generation and atomic fluorescence detection, has been developed for the determination of As, Bi, Sb, Se(IV) and Te(IV) in aqua regia extracts from atmospheric particulate matter samples. Atmospheric particulates matter was collected on glass fiber filters using a medium volume sampler (PM1 particulate matter). Two-level factorial designs have been used to optimise the hydride generation atomic fluorescence spectrometry (HG-AFS) procedure. The effects of several parameters affecting the hydride generation efficiency (hydrochloric acid, sodium tetrahydroborate and potassium iodide concentrations and flow rates) have been evaluated using a Plackett-Burman experimental design. In addition, parameters affecting the hydride measurement (delay, analysis and memory times) have been also investigated. The significant parameters obtained (sodium tetrahydroborate concentration, sodium tetrahydroborate flow rate and analysis time for As; hydrochloric acid concentration and sodium tetrahydroborate flow rate for Se(IV); and sodium tetrahydroborate concentration and sodium tetrahydroborate flow rate for Te(IV)) have been optimized by using 2 n + star central composite design. Hydrochloric acid concentration and sodium tetrahydroborate flow rate were the significant parameters obtained for Sb and Bi determination, respectively. Using a univariate approach these parameters were optimized. The accuracy of methods have been verified by using several certified reference materials: SRM 1648 (urban particulate matter) and SRM 1649a (urban dust). Detection limits in the range of 6 x 10 -3 to 0.2 ng m -3 have been achieved. The developed methods were applied to several atmospheric particulate matter samples corresponding to A Coruna city (NW Spain)

  9. A review of Pb-Sb(As-S, Cu(Ag-Fe(Zn-Sb(As-S, Ag(Pb-Bi(Sb-S and Pb-Bi-S(Te sulfosalt systems from the Boranja orefield, West Serbia

    Directory of Open Access Journals (Sweden)

    Radosavljević Slobodan A.

    2016-01-01

    Full Text Available Recent mineralogical, chemical, physical, and crystallographic investigations of the Boranja orefield showed very complex mineral associations and assemblages where sulfosalts have significant role. The sulfosalts of the Boranja orefield can be divided in four main groups: (i Pb-Sb(As-S system with ±Fe and ±Cu; (ii Cu(Ag-Fe(Zn-Sb(As-S system; (iii Ag(Pb-Bi(Sb-S; (iv and Pb-Bi-S(Te system. Spatially, these sulfosalts are widely spread, however, they are the most abundant in the following polymetallic deposits and ore zones: Cu(Bi-FeS Kram-Mlakva; Pb(Ag-Zn-FeS2 Veliki Majdan (Kolarica-Centralni revir-Kojići; Sb-Zn-Pb-As Rujevac; and Pb-Zn-FeS2-BaSO4 Bobija. The multi stage formation of minerals, from skarnhydrothermal to complex hydrothermal with various stages and sub-stages has been determined. All hydrothermal stages and sub-stages of various polymetallic deposits and ore zones within the Boranja orefield are followed by a variety of sulfosalts. [Projekat Ministarstva nauke Republike Srbije, br. OI-176016: Magmatism and geodynamics of the Balkan Peninsula from Mesozoic to present day: Significance for the formation of metallic and non-metallic mineral deposits

  10. Quadrupole interaction studies of Hg in Sb

    International Nuclear Information System (INIS)

    Soares, J.C.; Krien, K.; Herzog, P.; Folle, H.R.; Freitag, K.; Reuschenbach, F.; Reuschenbach, M.; Trzcinski, R.

    1978-01-01

    Time differential perturbed angular correlation and nuclear orientation studies of the electric quadrupole interaction for Hg in Sb have been performed. The effective field gradients at room temperature and below 0.05K have been derived. These two values are no indication for an anomalous temperature dependence of the effective field gradient for Hg in Sb. The value of the electric field gradient fits well into the systematics for Hg in other hosts. It is shown that the electronic enhancements of the field gradients are correlated to the valence of the impurities and are rather insensitive to the host properties. (orig./HPOE) [de

  11. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Energy Technology Data Exchange (ETDEWEB)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

    2016-12-15

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  12. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Science.gov (United States)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

    2016-12-01

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  13. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  14. Investigation on the structural stability and electronic properties of InSb nanostructures – A DFT approach

    Directory of Open Access Journals (Sweden)

    V. Nagarajan

    2014-06-01

    Full Text Available The realistic InSb nanostructures namely InSb nanoring, InSb nanocube, InSb nanocube-18, InSb nanosheet, InSb nanocage and InSb nanocube-27 are simulated and optimized successfully using B3LYP/LanL2DZ basis set. The stability of InSb nanostructures is studied in terms of binding energy, vibrational studies and calculated energy. The electronic properties of InSb nanostructures are discussed using ionization potential, electron affinity and HOMO–LUMO gap. Point symmetry and dipole moment of InSb nanostructures are reported. Incorporation of impurity atom in InSb nanostructures is studied using embedding energy. The present study provides the information regarding the enhanced electronic properties of InSb nanostructure which finds its potential importance in microelectronics and optoelectronic devices.

  15. Structural transition of (InSb)n clusters at n = 6-10

    Science.gov (United States)

    Lu, Qi Liang; Luo, Qi Quan; Huang, Shou Guo; Li, Yi De

    2016-10-01

    An optimization strategy combining global semi-empirical quantum mechanical search with all-electron density functional theory was adopted to determine the lowest energy structure of (InSb)n clusters with n = 6-10. A new structural growth pattern of the clusters was observed. The lowest energy structures of (InSb)6 and (InSb)8 were different from that of previously reported results. Competition existed between core-shell and cage-like structures of (InSb)8. The structural transition of (InSb)n clusters occurred at size n = 8-9. For (InSb)9 and (InSb)10 clusters, core-shell structure were more energetically favorable than the cage. The corresponding electronic properties were investigated.

  16. Recombination coefficients in extrinsic n-InSb

    International Nuclear Information System (INIS)

    Schneider, W.; Groh, H.; Huebner, K.

    1976-01-01

    The bulk recombination coefficients for linear recombination via recombination centers as well as for direct recombination have been determined measuring the conductivity decay after two-photon absorption with a CO 2 laser. The Suhl effect was applied to measure the surface recombination velocity. The corresponding literature is discussed and compared with our results. We conclude that two different kinds of recombination centers are possible in n-InSb, with energy levels (0.1-0.12)eV above the valence band, or (0.14-0.2)eV respectively. (orig.) [de

  17. First principles simulation of amorphous InSb

    Science.gov (United States)

    Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

    2013-05-01

    Ab initio molecular dynamics simulations based on density functional theory have been performed to generate a model of amorphous InSb by quenching from the melt. The resulting network is mostly tetrahedral with a minor fraction (10%) of atoms in a fivefold coordination. The structural properties are in good agreement with available x-ray diffraction and extended x-ray-absorption fine structure data and confirm the proposed presence of a sizable fraction of homopolar In-In and Sb-Sb bonds whose concentration in our model amounts to about 20% of the total number of bonds.

  18. Transmutation doping and lattice defects in degenerate InSb

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Glaeser, W.

    1990-01-01

    n-type InSb single crystals were irradiated with thermal neutrons below T = 6 K. The Shubnikov-de Haas effect and the resistivity ρ(T = 4.6 K) were measured as a function of the neutron dose and the holding temperature of a subsequent annealing program. The results are discussed in terms of the transport scattering rate and the lifetime of the Landau-levels. They have to be interpreted by means of n-doping due to nuclear reactions and irradiation induced negatively charged defects. Almost complete annealing of the transport parameters can be achieved by heating the samples to T A = 400 K. (author)

  19. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

    Science.gov (United States)

    Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

    2017-07-01

    The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

  20. Averaged currents induced by alpha particles in an InSb compound semiconductor detector

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Hishiki, Shigeomi; Kogetsu, Yoshitaka; Nakamura, Tatsuya; Katagiri, Masaki

    2008-01-01

    Very fast pulses due to alpha particle incidence were observed by an undoped-type InSb Schottky detector. This InSb detector was operated without applying bias voltage and its depletion layer thickness was less than the range of alpha particles. The averaged current induced by alpha particles was analyzed as a function of operating temperature and was shown to be proportional to the Hall mobility of InSb. (author)

  1. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Directory of Open Access Journals (Sweden)

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  2. The motley family of polar compounds (MV)[M(X{sub 5-x}X Prime {sub x})] based on anionic chains of trans-connected M{sup (III)}(X,X Prime ){sub 6} octahedra (M=Bi, Sb; X, X Prime =Cl, Br, I) and methylviologen (MV) dications

    Energy Technology Data Exchange (ETDEWEB)

    Leblanc, Nicolas [Laboratoire MOLTECH-Anjou, UMR-CNRS 6200, Universite d' Angers 2 Bd Lavoisier, 49045 Angers (France); Mercier, Nicolas, E-mail: nicolas.mercier@univ-angers.fr [Laboratoire MOLTECH-Anjou, UMR-CNRS 6200, Universite d' Angers 2 Bd Lavoisier, 49045 Angers (France); Allain, Magali; Toma, Oksana [Laboratoire MOLTECH-Anjou, UMR-CNRS 6200, Universite d' Angers 2 Bd Lavoisier, 49045 Angers (France); Auban-Senzier, Pascale; Pasquier, Claude [Laboratoire de Physique des Solides, UMR-CNRS 8502, Bat. 510,Universite Paris Sud, 91405 Orsay (France)

    2012-11-15

    The search for hybrid organic-inorganic materials remains a great challenge in the field of ferroelectrics. Following the discovery of the room temperature ferroelectric material (MV)[BiI{sub 3}Cl{sub 2}] (MV{sup 2+}: methylviologen) exhibiting the highest polarization value in the field of hybrid ferroelectrics, we report here nine new hybrids with the general formulation (MV)[M{sup (III)}X{sub 5-x}X Prime {sub x}] (M=Bi, Sb; X, X Prime =Cl, Br, I): (MV)[BiCl{sub 3.3}Br{sub 1.7}] (1), (MV)[BiCl{sub 1.3}Br{sub 3.7}] (2), (MV)[BiBr{sub 3.2}I{sub 1.8}] (3), (MV)[SbCl{sub 5}] (4), (MV)[SbBr{sub 5}] (5), (MV)[SbCl{sub 3.8}Br{sub 1.2}] (6), (MV)[SbCl{sub 2.4}Br{sub 2.6}] (7), (MV)[SbI{sub 3}Cl{sub 2}] (8) and (MV)[SbBr{sub 3.8}I{sub 1.2}] (9). Depending on the presence of polar chains or not, and on the coupling of polar chains, two types of centrosymmetrical structures [C1] and [C2] and two types of polar structures [P1] and [P2] are defined. (2) undergoes a paraelectric-to-relaxor ferroelectric transition around 100-150 K depending of the frequency showing that the Curie temperature, T{sub C}, of (MV)[BiBr{sub 5}] (243 K) can be modulated by the substitution of Br by Cl. The most interesting family is the [P2] type because the syn coupling of polar chains is in favor of high polarization values, as in (MV)[BiI{sub 3}Cl{sub 2}]. Five of the nine new hybrids, (4), (6-9), which have the [P2] type structure are potential ferroelectrics. - Graphical abstract: The methylviologen haloantimonate (MV)[SbX{sub 5-x}X Prime {sub x}] families (X, X Prime =Cl, Br, I) - [P1] and [P2] are the two kinds of polar structures - and view of the (MV)[SbBr{sub 3.8}I{sub 1.2}] hybrid based on chiral polar chains which are in syn coupling. Highlights: Black-Right-Pointing-Pointer Nine hybrids based on methylviologen and halometalate chains have been discovered. Black-Right-Pointing-Pointer The polar nature of chains is due to the ns{sup 2} stereoactivity of Sb{sup (III)} or Bi{sup (III

  3. Interface characterization of InSb MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

    1982-03-26

    The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

  4. Measurements of light absorption efficiency in InSb nanowires

    Directory of Open Access Journals (Sweden)

    A. Jurgilaitis

    2014-01-01

    Full Text Available We report on measurements of the light absorption efficiency of InSb nanowires. The absorbed 70 fs light pulse generates carriers, which equilibrate with the lattice via electron-phonon coupling. The increase in lattice temperature is manifested as a strain that can be measured with X-ray diffraction. The diffracted X-ray signal from the excited sample was measured using a streak camera. The amount of absorbed light was deduced by comparing X-ray diffraction measurements with simulations. It was found that 3.0(6% of the radiation incident on the sample was absorbed by the nanowires, which cover 2.5% of the sample.

  5. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    International Nuclear Information System (INIS)

    Feng, ShiQuan; Cheng, XinLu; Zhao, JianLing; Zhang, Hong

    2013-01-01

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T e = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect

  6. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    Science.gov (United States)

    Feng, ShiQuan; Zhao, JianLing; Cheng, XinLu; Zhang, Hong

    2013-07-01

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from Te = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

  7. Electronic structure and STM imaging of the KBr-InSb interface

    Energy Technology Data Exchange (ETDEWEB)

    Ciochoń, Piotr, E-mail: ciochon.piotr@gmail.com; Olszowska, Natalia; Kołodziej, Jacek J.

    2017-07-01

    Highlights: • The structure of the InSb (001) surface covered with thin KBr layers is reported. • KBr growth does not perturb strongly the structure of a clean InSb surface. • A model of the system with KBr treated as a thin dielectric layer is proposed. • The atomic structure of the KBr-InSb interface is directly imaged using STM. - Abstract: We study the properties of the InSb (001) surface covered with ultrathin KBr films, with a thickness of 1–4 ML. KBr deposition does not strongly perturb the crystallographic structure of the InSb surface and the electronic structure of the substrate also remains unaffected by the overlayer. A simple model of the studied system is proposed, in which a thin KBr layer is treated as a dielectric film, modifying potential barrier for the electrons tunneling to/from the InSb substrate. Apparent step heights on the KBr film, measured using scanning tunneling microscope (STM), agree well with the predictions of the model and the atomically-resolved STM images show the structure of the InSb-KBr interface. Our results demonstrate that STM may be used as a tool for investigations of the semiconductor–insulator interfaces.

  8. Materials technology for InSb MISFET applications

    International Nuclear Information System (INIS)

    Barth, W.; Chen, C.W.; Lile, D.L.; Junga, F.

    1989-01-01

    The narrow and direct bandgap of indium antimonide is frequently used to good advantage in detection of light in the infra-red region; however, to data little use has been made of the high mobilities associated with this material. Although its high intrinsic carrier concentration generally necessitates operation at cooled temperatures, higher speeds and the advantage of integrating other devices on-chip with the infrared detectors encourages the development of an active device technology on this semiconductor. Considering its small bandgap, the problems associated with good p-n junctions may favor the MISFET in this application. Surprisingly, little has been done toward this goal, though structures such as charge-coupled-devices, focal array detectors, and a few insulated gate FETs have been fabricated. In this paper the authors present the results of recent work toward the development of a fabrication technology for InSb MISFETs. Specifically, they have conducted a study of etchants, metal contacts, and dielectrics for application to mesa-structure, insulated gate field transistors

  9. Effect of N incorporation on the characteristics of InSbN P–N diodes

    International Nuclear Information System (INIS)

    Lim, K.P.; Pham, H.T.; Yoon, S.F.; Tan, K.H.

    2012-01-01

    We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On the other hand, high reverse dark current and series resistances are observed in the electrical characteristics of the InSbN diode which are contributed with the presence of planar growth defects. These results will be useful to those working on midinfrared photodetectors.

  10. Superconductivity in MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Muranaka, Takahiro; Akimitsu, Jun [Aoyama Gakuin Univ., Kanagawa (Japan). Dept. of Physics and Mathematics

    2011-07-01

    We review superconductivity in MgB{sub 2} in terms of crystal and electronic structure, electron-phonon coupling, two-gap superconductivity and application. Finally, we introduce the development of new superconducting materials in related compounds. (orig.)

  11. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Guseynov, R. R.; Tanriverdiyev, V. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede [Stony Brook, Stony Brook University (United States); Aliyeva, Ye. N.; Aliguliyeva, Kh. V.; Abdullayev, N. A., E-mail: abnadir@mail.ru; Mamedov, N. T. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

    2017-04-15

    Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

  12. Thermodynamics of (Ga, In)-Sb-O-Si and impact on dewetting process

    Energy Technology Data Exchange (ETDEWEB)

    Sylla, L. [Cyberstar, Echirolles (France); Duffar, T. [SIMaP-EPM, Saint Martin d' Heres (France)

    2011-11-15

    A thermodynamic study is performed for the systems (Ga or In)-Sb-O-Si in order to better understand the difference observed during dewetting experiments of GaSb and InSb in silica ampoules. Results show that the melts can be considered as non reactive toward silica. When the atmosphere is clean ({<=}1 ppm O{sub 2}), no oxide is formed, while, under oxidising atmosphere, oxides exist above the melting point of the antimonide and are known to increase the wetting angle of the melt on the crucible. However the temperature range for oxide stability is smaller in the case of InSb and this may explain why dewetting is easy for GaSb in presence of oxygen, while it is difficult for InSb. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Dislocation motion in InSb crystals under a magnetic field

    CERN Document Server

    Darinskaya, E V; Erofeeva, S A

    2002-01-01

    Dislocation displacements under the action of a permanent magnetic field without mechanical loading in differently doped InSb crystals are investigated. The dependences of the mean dislocation path length and the relative number of divergence and tightening half-loops on the magnetic induction and preliminary load are obtained. Experiments on n-InSb crystals with Te impurities and on p-InSb crystals with Ge impurities have shown a sensitivity of the magnetoplasticity to the conductivity type and the dopant content. Study of the magnetoplastic effect in the initial deformed InSb crystals shows that internal stresses decrease the lengths of divergence dislocation paths and simultaneously increase the threshold magnetic field above which the magnetoplastic effect exists. Possible reasons for the observed phenomena are discussed.

  14. Transportation properties of amorphous state InSb and its metastable middle phase

    International Nuclear Information System (INIS)

    Cao Xiaowen

    1990-09-01

    The variation of the substrate temperature induces the metal-semiconductor transition in the condensation InSb films at low temperatrue. The electron conduction is dominant in the metal-type amorphous InSb and the hole in semiconductor-type one. In the metal-type amorphous InSb the electron-electron is correlated under the field above 0.1T in the temperature region of liquid nitrogen. The structure relaxation leads to not only the increase of the short range order but also the change of electron structure in metal-type amorphous InSb. The first conductance jump originates mainly from the increase of Hall mobility of the carrier, i.e. the increase of the short range order, and the system relaxes from the liquid-like to the lattice-like amorphous state. The three types of the crystallization phase transition for the metal-type amorphous InSb present obviously different transportation behaviours. Both metal-type amorphous state and metastable middle phase of InSb all are one of superconducting system with the lowest carrier concentration (n 0 ∼10 18 cm -3 ). Superconducting T c of the metastable middle phase is related to the state density near Fermi surface, i.e. the higher T c corresponds to the higher state density. The quasi-two-dimensional structure is favourable to superconductivity

  15. Bi-induced band gap reduction in epitaxial InSbBi alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Alaria, J.; Veal, T. D., E-mail: T.Veal@liverpool.ac.uk [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom); Yu, K. M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Bomphrey, J. J.; Jones, T. S.; Ashwin, M. J., E-mail: M.J.Ashwin@warwick.ac.uk [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Sallis, S.; Piper, L. F. J. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-11-24

    The properties of molecular beam epitaxy-grown InSb{sub 1−x}Bi{sub x} alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb{sub 0.976}Bi{sub 0.024}, a reduction of ∼35 meV/%Bi.

  16. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Druzhinin, A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Ostrovskii, I.; Khoverko, Yu. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Liakh-Kaguy, N.; Khytruk, I. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

    2015-12-15

    Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

  17. Gate-tunable Andreev bound states in InSb nanowire Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Ning; Li, Sen; Fan, Dingxun; Xu, Hongqi [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China); Caroff, Philippe [Division of Solid State Physics, Lund University, P. O. Box 118, S-221 00 Lund (Sweden)

    2016-07-01

    Hybrid InSb nanowire-superconductor devices are promising candidates for investigating Majorana modes in solid-state devices and future technologies of topological quantum manipulation. Here, we report low-temperature transport measurements on an individual InSb nanowire quantum dot coupled to superconducting contacts that exhibit an interplay between the Kondo effects and superconductivity. We observed two types of subgap resonance states within the superconducting gap, which can be attributed to gate-tunable Andreev bound states in Coulomb valleys with different Kondo temperatures. The presence of the gate-tunable 0 and pi junction allow us to investigate the fundamental 0- pi transition. Detailed magnetic field and temperature evolution of level spectroscopy demonstrate different behavior of two types of the Andreev bound states. Our results exhibit that the InSb nanowires can provide a promising platform for exploring phase coherence transport and the effect of spin-orbit coupling in semiconductor nanowire-superconductor hybrid device.

  18. Temperature dependent lattice constant of InSb above room temperature

    Science.gov (United States)

    Breivik, Magnus; Nilsen, Tron Arne; Fimland, Bjørn-Ove

    2013-10-01

    Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the bulk lattice constant of InSb was determined between 32 and 325 °C. A polynomial function was fitted to the data: a(T)=6.4791+3.28×10-5×T+1.02×10-8×T2 Å (T in °C), which gives slightly higher values than previously published (which go up to 62 °C). From the fit, the thermal expansion of InSb was calculated to be α(T)=5.062×10-6+3.15×10-9×T K-1 (T in °C). We found that the thermal expansion coefficient is higher than previously published values above 100 °C (more than 10% higher at 325 °C).

  19. Magneto-optical properties of InSb for terahertz applications

    Directory of Open Access Journals (Sweden)

    Jan Chochol

    2016-11-01

    Full Text Available Magneto-optical permittivity tensor spectra of undoped InSb, n-doped and p-doped InSb crystals were determined using the terahertz time-domain spectroscopy (THz-TDS and the Fourier transform far-infrared spectroscopy (far-FTIR. A Huge polar magneto-optical (MO Kerr-effect (up to 20 degrees in rotation and a simultaneous plasmonic behavior observed at low magnetic field (0.4 T and room temperature are promising for terahertz nonreciprocal applications. We demonstrate the possibility of adjusting the the spectral rage with huge MO by increase in n-doping of InSb. Spectral response is modeled using generalized magneto-optical Drude-Lorentz theory, giving us precise values of free carrier mobility, density and effective mass consistent with electric Hall effect measurement.

  20. Astronomical imaging with a low temperature InSb charge injection device (CID)

    International Nuclear Information System (INIS)

    Rouan, D.; Lacombe, F.; Tiphene, D.; Stefanovitch, D.; Phan van, D.

    1986-01-01

    InSb charge injection device (CID) technology focal plane arrays employ two coupled MIS capacitors which collect and store photon-generated charge carriers. Attention is presently given to two-dimensional arrays for 77 K and 4 K operating temperatures in astronomical applications; two such prototypes for ground observations have been developed for use with a 2-m telescope. A CID InSb array is noted to be a useful candidate for the proposed IR Space Observatory's focal plane camera. 7 references

  1. Reaction probability of molecular deuterium with a disordered InSb (110) surface

    International Nuclear Information System (INIS)

    Wolf, B.; Zehe, A.

    1987-01-01

    A detailed experimental analysis of the interaction of molecular deuterium with sputter-damaged InSb surfaces by the aid of SIMS is given. The sticking probability of D 2 and its transformation to a chemisorbed state resulting in InD + signals in SIMS measurements can be determined by adsorption experimens both with and without a hot tungsten filament. The calculated sticking probability of D 2 = 2 x 10 -4 is at least three orders of magnitude higher than the known-value for a cleavage plane of InSb

  2. A surface-gated InSb quantum well single electron transistor

    International Nuclear Information System (INIS)

    Orr, J M S; Buckle, P D; Fearn, M; Storey, C J; Buckle, L; Ashley, T

    2007-01-01

    Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantized confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy (e 2 /C) is found to be comparable with the energy spectrum for single particle states (ΔE)

  3. Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Solov’ev, V.A., E-mail: vasol@beam.ioffe.ru; Sedova, I.V.; Lvova, T.V.; Lebedev, M.V.; Dement’ev, P.A.; Sitnikova, A.A.; Semenov, A.N.; Ivanov, S.V.

    2015-11-30

    Highlights: • Treatment of InSb (0 0 1) substrate with 1 M aqueous Na{sub 2}S solution results in nearly complete removal of native oxides. • A sulfide protective layer formed by the S-treatment is desorbed at much lower temperatures than the native oxide layer. • The bulk InSb epilayers grown on the S-treated substrates have very smooth surface (RMS ∼0.1 nm). • Good structural quality of the homointerfaces formed at the S-treated substrates is confirmed by TEM. - Abstract: The aqueous sodium sulfide solution has been used for pre-epitaxial preparation of epi-ready InSb (0 0 1) substrates for molecular beam epitaxy (MBE) of InSb layers. X-ray photoemission spectroscopy study shows that the S-treated surface of InSb (0 0 1) substrate generally does not contain a native oxide layer and is covered with a sulfide protecting overlayer. Atomic-force microscopy and transmission electron microscopy have been applied to compare surface topography and structural properties of InSb layers grown by MBE on S-treated and untreated epi-ready InSb (0 0 1) substrates. The MBE growth of InSb layers with very smooth surface possessing the root-mean-square roughness as low as 0.1 nm and good structural quality has been demonstrated on the S-treated substrates.

  4. Direct measurement of the near-field super resolved focused spot in InSb

    NARCIS (Netherlands)

    Assafrao, A.C.; Wachters, A.J.H.; Verheijen, M.; Nugrowati, A.M.; Pereira, S.F.; Urbach, H.P.; Armand, M.F.; Olivier, S.

    2012-01-01

    Under appropriate laser exposure, a thin film of InSb exhibits a sub-wavelength thermally modified area that can be used to focus light beyond the diffraction limit. This technique, called Super-Resolution Near-Field Structure, is a potential candidate for ultrahigh density optical data storage and

  5. Experimental investigation and thermodynamic description of the In-Sb-Sn ternary system

    Czech Academy of Sciences Publication Activity Database

    Manasijevič, D.; Vřešťál, J.; Minic, D.; Kroupa, Aleš; Zivkovic, D.; Zivkovic, Z.

    2008-01-01

    Roč. 450, 1-2 (2008), s. 193-199 ISSN 0925-8388 R&D Projects: GA MŠk(CZ) OC08053 Institutional research plan: CEZ:AV0Z20410507 Keywords : In-Sb-Sn system * phase diagram * CALPHAD Subject RIV: BJ - Thermodynamics Impact factor: 1.510, year: 2008

  6. Stability of the spectral responsivity of cryogenically cooled InSb infrared detectors

    International Nuclear Information System (INIS)

    Theocharous, Evangelos

    2005-01-01

    The spectral responsivity of two cryogenically cooled InSb detectors was observed to drift slowly with time. The origin of these drifts was investigated and was shown to occur due to a water-ice thin film that was deposited onto the active areas of the cold detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the antireflection coatings deposited on the active areas of the detectors, thus giving rise to the observed drifts. The magnitude of the drifts was drastically reduced by evacuating the detector dewars while baking them at 50 deg. C for approximately 48 h. All InSb detectors have antireflection coatings to reduce the Fresnel reflections and therefore enhance their spectral responsivity. This work demonstrates that InSb infrared detectors should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to InSb detectors mounted in dewars that use rubber O rings since the ingress of moisture was found to be particularly serious in this type of dewar

  7. Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

    Science.gov (United States)

    Wang, Tuo; Vaxenburg, Roman; Liu, Wenyong; Rupich, Sara M; Lifshitz, Efrat; Efros, Alexander L; Talapin, Dmitri V; Sibener, S J

    2015-01-27

    The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

  8. Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.

    Science.gov (United States)

    Rieger, Torsten; Zellekens, Patrick; Demarina, Natalia; Hassan, Ali Al; Hackemüller, Franz Josef; Lüth, Hans; Pietsch, Ullrich; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

    2017-11-30

    The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a transition from island-based to layer-like growth occurs during the formation of the shell. High resolution transmission electron microscopy in combination with geometric phase analyses as well as X-ray diffraction with synchrotron radiation are used to investigate the strain relaxation and prove the existence of different dislocations relaxing the strain on zinc blende and wurtzite core-shell nanowire segments. While on the wurtzite phase only Frank partial dislocations are found, the strain on the zinc blende phase is relaxed by dislocations with perfect, Shockley partial and Frank partial dislocations. Even for ultrathin shells of about 2 nm thickness, the strain caused by the high lattice mismatch between GaAs and InSb is relaxed almost completely. Transfer characteristics of the core-shell nanowires show an ambipolar conductance behavior whose strength strongly depends on the dimensions of the nanowires. The interpretation is given based on an electronic band profile which is calculated for completely relaxed core/shell structures. The peculiarities of the band alignment in this situation implies simultaneously occupied electron and hole channels in the InSb shell. The ambipolar behavior is then explained by the change of carrier concentration in both channels by the gate voltage.

  9. Photoconductivity and photomagnetic electromotive force in InSb thin samples

    International Nuclear Information System (INIS)

    Mosanov, O.; Chonanova, O.G.; Annamamedov, A.G.; Padalko, A.G.; Redzhepov, M.

    1987-01-01

    Photoconductivity and photomagnetic effect in crossed electric and magnetic fields in thin (4 and 20 μm) InSb monocrystalline layers obtained from the melt by oriented crystallization are investigated. Possibility of controlling photomagnetic emf value by variation of the current value and polarity is shown

  10. Inverse simulated annealing: Improvements and application to amorphous InSb

    OpenAIRE

    Los, Jan H.; Gabardi, Silvia; Bernasconi, Marco; Kühne, Thomas D.

    2014-01-01

    An improved inverse simulated annealing method is presented to determine the structure of complex disordered systems from first principles in agreement with available experimental data or desired predetermined target properties. The effectiveness of this method is demonstrated by revisiting the structure of amorphous InSb. The resulting network is mostly tetrahedral and in excellent agreement with available experimental data.

  11. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  12. Reconstructions of the sulfur-passivated InSb (100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Ciochoń, Piotr, E-mail: piotr.ciochon@doctoral.uj.edu.pl; Olszowska, Natalia; Wróbel, Sonia; Kołodziej, Jacek

    2017-04-01

    Highlights: • Two new surface reconstructions of a S-passivated InSb (001) surface are reported. • The reconstructions are obtained through partial loss of surface sulfur. • They are characterized by the thickness of ∼4 Å and good crystallographic ordering. • The reconstructions provide adequate electronic passivation of the surface. - Abstract: We have studied the properties of the InSb (100) surface passivated with sulfur dimers emitted by the solid-state electrochemical cell in ultra-high vacuum. Annealing the passivated surface in the temperature equal to T = 326 °C led to the formation of the c(4 × 8) surface reconstruction, while increasing the temperature to T = 348 °C resulted in the transition to c(4 × 12) reconstruction. To the best of our knowledge these reconstructions have not been reported to date and are characterized by the exceptionally good crystallographic order. XPS studies revealed that there are at least 4 different chemical species of sulfur present on the surface and the estimated thickness of the sulfur layers is equal to around 4 Å. The surface reconstructions are characterized by the lowered intensity of the surface electronic states and resonances near the Fermi level, compared to the clean InSb surface, making them potentially very useful for the fabrication of InSb-based electronic and optoelectronic devices.

  13. Effect of intense laser irradiation on the lattice stability of InSb

    Energy Technology Data Exchange (ETDEWEB)

    Wang, M.M.; Gao, T.; Yu, Y. [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Zeng, X.W. [School of Civil Engineering and Transportation, South China University of Technology, Guangzhou, Guangdong 510640 (China)

    2012-01-15

    Indium Antimonide (InSb) has been used in semi-conductor detectors, so investigating the structural, electronic and lattice dynamical properties of InSb is of considerable practical interest. We have performed an ab initio study of electronic and dynamical properties of the zinc-blende InSb at different electronic temperatures. The calculations have been carried out within the density-functional theory and linear-response formalism using norm-conserving pseudopotentials and a plane-wave basis. The calculated direct band gap is seen to be 0.1 eV, which is underestimated with the experimental value of 0.18 eV. As the electronic temperature increases, the results indicate that the InSb undergoes a melting transition to a metallic state. The transverse acoustic modes of the InSb are found to be negative in the most part of the Brillouin zone (BZ) which leads to lattice dynamical instability at electronic temperature of 0.75 eV as indicated by imaginary phonon frequencies. Moreover, for optical modes, there exists a LO-TO (Longitudinal Optical and Transverse Optical) splitting at the zone-center ({Gamma} point) when T{sub e} = 0 eV and the frequencies are LO = 190.5 cm{sup -1}, TO = 182.4 cm{sup -1}, respectively; however, the LO-TO splitting will disappear when T{sub e} > 0 eV. The calculated values are in reasonable agreement with available experimental and theoretical data. (authors)

  14. Self-assembly of a 1-eicosanethiolate layer on InSb(100)

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, Yissel; Muscat, Anthony J., E-mail: muscat@email.arizona.edu

    2016-05-01

    Highlights: • 1-Eicosanethiolate molecules form weak bonds with InSb(100) limiting order in the SAM. • The low interaction energy of the molecules is shown by ATR-FTIR and desorption. • The bond that S makes with the substrate determines the cohesiveness of the molecules. - Abstract: 1-Eicosanethiolate molecules form relatively weak bonds with the surface of InSb(100) limiting the order of the self-assembled monolayer despite the long length of the alkyl chain. Heating to only 225 °C in vacuum completely desorbed the eicosanethiolate layer from the surface based on X-ray photoelectron spectroscopy. Even after deposition times as long as 20 h in ethanol, the asymmetric methylene stretch was at 2925 cm{sup −1} in the attenuated total reflection Fourier transform infrared spectrum, which is indicative of alkane chains that are incompletely ordered. Atomic force microscopy images combined with ellipsometry showed that the eicosanethiolate layer conformed to the rough InSb(100) starting surface (2.3 ± 0.2 nm RMS). The reoxidation kinetics in air of InSb(100) and InSb(111)B covered with eicosanethiolate layers was the same despite the lower surface roughness of the latter (0.64 ± 0.14 nm). The bond that the S head group makes with the substrate is the primary factor that determines the cohesiveness of the molecules on the surface. Although interactions between the alkane chains in the layer are sufficient to form a self-assembled layer, the fluidity of the molecules in the layer compromised the chemical passivation of the surface resulting in reoxidation in air after 20 min.

  15. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Lien

    2011-04-13

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

  16. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

    International Nuclear Information System (INIS)

    Tran, Lien

    2011-01-01

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

  17. Interstitial Fe in MgO

    CERN Document Server

    Mølholt, T E; Gunnlaugsson, H P; Svane, A; Masenda, H; Naidoo, D; Bharuth-Ram, K; Fanciulli, M; Gislason, H P; Johnston, K; Langouche, G; Ólafsson, S; Sielemann, R; Weyer, G

    2014-01-01

    Isolated Fe-57 atoms were studied in MgO single-crystals by emission Mossbauer spectroscopy following implantation of Mn-57 decaying to Fe-57. Four Mossbauer spectral components were found corresponding to different Fe lattice positions and/or charge states. Two components represent Fe atoms substituting Mg as Fe2+ and Fe3+, respectively; a third component is due to Fe in a strongly implantation-induced disturbed region. The fourth component, which is the focus of this paper, can be assigned to Fe at an interstitial site. Comparison of its measured isomer shift with ab initio calculations suggests that the interstitial Fe is located on, or close to, the face of the rock-salt MgO structure. To harmonize such an assignment with the measured near-zero quadrupole interaction a local motion process (cage motion) of the Fe has to be stipulated. The relation of such a local motion as a starting point for long range diffusion is discussed.

  18. Determination of the mobility ratio in InSb at the temperature of the conductivity type conversion

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K. [Research Institute for Technical Physics and Materials Science, HAS, 1525 Budapest, P.O. Box 49 (Hungary)

    2005-05-01

    The temperature dependence of magneto-transport in bulk p-type InSb was investigated, and a special approach was applied for the precise determination of the temperature dependence. Such measurements also allow the determination of the mobility ratio (b) which is known to be large in InSb. Although this type of investigation is standard, in this work an improved method of carrying out temperature-dependent Hall measurements is reported and improved calculations for the determination of large b values in InSb are presented. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. On the processing of InAs and InSb photodiode applications

    Energy Technology Data Exchange (ETDEWEB)

    Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

    2008-07-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes

    Directory of Open Access Journals (Sweden)

    A. Pitanti

    2011-08-01

    Full Text Available Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III leads to a strong rectification effect when the current-voltage (I-V characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range.

  1. X-ray diffraction, Raman and photoacoustic studies of InSb nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Ersching, K., E-mail: kleb85@hotmail.com [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Campos, C.E.M.; Lima, J.C. de; Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Souza, S.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, 88040-900 Florianopolis, Santa Catarina (Brazil); Pizani, P.S. [Departamento de Fisica, Universidade Federal de Sao Carlos, 13 565-905 Sao Carlos, SP (Brazil)

    2010-08-01

    Zinc blend InSb nanocrystals were generated by mechanical alloying and X-ray diffraction, Raman spectroscopy and photoacoustic absorption spectroscopy techniques were used to study its structural, optical and thermal properties. Annealed nanocrystals were also studied. Residual amorphous and minority crystalline (Sb and In{sub 2}O{sub 3}) phases were also observed for mechanical alloyed and thermal annealed samples, respectively. The structural parameters, phase fractions, average crystallite sizes and microstrains of all crystalline phases found in the samples were obtained from Rietveld analyses of their X-ray diffraction patterns. Raman results for both as-milled and annealed samples show the Raman active LO and TO modes of the zinc blend InSb phase and Sb-rich regions. The photoacoustic results of both samples were satisfactorily explained by thermal bending heat transfer mechanism and an increase on effective thermal diffusivity coefficient was observed after annealing.

  2. Synthesis of InSb Nanowire Architectures - Building Blocks for Majorana Devices

    Science.gov (United States)

    Car, Diana

    Breakthroughs in material development are playing a major role in the emerging field of topological quantum computation with Majorana Zero Modes (MZMs). Due to the strong spin-orbit interaction and large Landé g-factor InSb nanowires are one of the most promising one dimensional material systems in which to detect MZMs. The next generation of Majorana experiments should move beyond zero-mode detection and demonstrate the non-Abelian nature of MZMs by braiding. To achieve this goal advanced material platforms are needed: low-disorder, single-crystalline, planar networks of nanowires with high spin-orbit energy. In this talk I will discuss the formation and electronic properties of InSb nanowire networks. The bottom-up synthesis method we have developed is generic and can be employed to synthesize interconnected nanowire architectures of group III-V, II-VI and IV materials as long as they grow along a direction.

  3. On the processing of InAs and InSb photodiode applications

    International Nuclear Information System (INIS)

    Odendaal, V.; Botha, J.R.; Auret, F.D.

    2008-01-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Influence of low-temperature annealing on InSb properties

    International Nuclear Information System (INIS)

    Tsitsina, N.P.; Fadeeva, A.P.; Vdovkina, E.E.; Baryshev, N.S.; Aver'yanov, I.S.

    1975-01-01

    Annealing at 200 deg C during 6 days does not cause inversion of conductivity in n-InSb, leads to the increase of the carrier concentration and the decrease of the specific resistance in samples both of n- and of p-type; these variations being more significant in the material of n-type. The existence of a level at a distance of 0.15-0.17 eV from the ceiling of the valency zone in non-annealed samples of InSb is confirmed. The level is of acceptor type and disappears with low-temperature annealing. The low-temperature annealing practically does not influence the lifetime in p-type samples and results in the 5-20-fold increase in the lifetime in n-type samples

  5. Monte-Carlo study of electron noise in compensated InSb

    International Nuclear Information System (INIS)

    Ašmontas, S; Raguotis, R; Bumelienė, S

    2015-01-01

    The results of Monte Carlo simulations of the electron noise in lightly doped and strongly compensated n-type InSb are presented. The strong electron scattering by ionized impurities is established to change essentially the electron distribution function, spectral density of velocity fluctuations and the dependence of noise temperature on the electric field strength. It is found that the electron noise temperature in strongly compensated InSb with low electron density at liquid nitrogen temperature is close to the lattice temperature in a wide range of electric field strength in which the electron gas cooling effect takes place. The increase of electron density is shown to weaken the electron gas cooling effect due to more intensive electron–electron collisions stimulating delocalization of electrons from the bottom of the conduction band. A satisfactory agreement between calculations and available experimental data is obtained. (paper)

  6. Voltage transients in thin-film InSb Hall sensor

    Directory of Open Access Journals (Sweden)

    Alexey Bardin

    Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

  7. Ultrafast Structural Dynamics in InSb Probed by Time-Resolved X-Ray Diffraction

    International Nuclear Information System (INIS)

    Chin, A.H.; Shank, C.V.; Chin, A.H.; Schoenlein, R.W.; Shank, C.V.; Glover, T.E.; Leemans, W.P.; Balling, P.

    1999-01-01

    Ultrafast structural dynamics in laser-perturbed InSb are studied using time-resolved x-ray diffraction with a novel femtosecond x-ray source. We report the first observation of a delay in the onset of lattice expansion, which we attribute to energy relaxation processes and lattice strain propagation. In addition, we observe direct indications of ultrafast disordering on a subpicosecond time scale. copyright 1999 The American Physical Society

  8. Short-range order in InSb amorphized under ion bombardment

    International Nuclear Information System (INIS)

    Pavlov, P.V.; Tetel'baum, D.I.; Gerasimov, A.I.

    1979-01-01

    The investigation of short-range order is carried out in polycrystal InSb films, irradiated with Ne + ions with E=150 keV and with the 2x10 15 ion/cm 2 dose. The data are obtained testifying to the film amorphization, the cause of which is the defect storage but not the local melting. Stability of the obtained amorphous phase at the room temperature is noted

  9. Metal-insulator transition in n-InSb under high hydrostatic pressure

    International Nuclear Information System (INIS)

    Schaller, U.; Kraak, W.; Herrmann, R.

    1984-01-01

    The effect of applying hydrostatic compression (up to 12 kbar) to the galvanomagnetic properties of pure n-InSb crystals is investigated in order to get information about the influence of hydrostatic pressure on the localization of carriers and about the metal-insulator transition. Electrical resistivity and Hall coefficient are measured as a function of pressure for various excess donor concentrations as well as a function of temperature for various pressures

  10. Investigation of radiation defects in InSb formed by charged high energy nuclear particles

    International Nuclear Information System (INIS)

    Vikhlij, G.A.; Karpenko, A.Ya.; Litovchenko, P.G.; Tarabrova, L.I.; Groza, A.A.

    1990-01-01

    A possibility of creation of high concentrations of radiation defects in the bulk of InSb samples by 47 MeV protons and 80 MeV alpha particles is considered. Dose dependences of electroconductivity, optical absorption spectra as well as temperature and field relations of galvanomagnetic properties of samples with defects are investigated. Annealing stages and electrical properties of defects annealed at these stages are determined. 17 refs.; 7 figs

  11. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

    Science.gov (United States)

    Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

    2016-01-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

  12. Dopant-free twinning superlattice formation in InSb and InP nanowires

    International Nuclear Information System (INIS)

    Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

    2017-01-01

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Dopant-free twinning superlattice formation in InSb and InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

    2017-11-15

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. The electron mobility and thermoelectric power in InSb at atmospheric and hydrostatic pressures

    International Nuclear Information System (INIS)

    Litwin-Staszewska, E.; Piotrzkowski, R.; Szymanska, W.

    1981-01-01

    First, theoretical calculations of electron mobility and thermoelectric power in n-type InSb are reported at liquid nitrogen and room temperatures. All the scattering mechanisms of importance in InSb are taken into account. The calculations based upon a variational solution of the Boltzmann equation are compared with experimental results over the whole available range of electron concentrations. Good agreement between theoretical and experimental results is obtained using the value of deformation potential constant C = 14.6 eV. Secondly, both, experimental and theoretical investigations are made of mobility in InSb under hydrostatic pressure at 77 K within a wide range of electron concentrations. The smallest electron concentrations obtained by freezing the conduction electrons on the metastable states are of order of 1x10 12 cm -3 . Also for those smallest concentration it is possible to describe theoretically the dependence of mobility on the hydrostatic pressure using the same set of parameters as previously, and assuming some compensation of donors by acceptors. (author)

  15. Exotic topological insulator states and topological phase transitions in Sb2Se3-Bi2Se3 heterostructures

    KAUST Repository

    Zhang, Qianfan; Zhang, Zhiyong; Zhu, Zhiyong; Schwingenschlö gl, Udo; Cui, Yi

    2012-01-01

    in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb 2Se 3-Bi 2Se 3 heterostructures by first-principle simulation and discovered

  16. Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

    Science.gov (United States)

    Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2018-05-01

    A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

  17. Two-dimensional properties of n-inversion layers in InSb grain boundaries under high hydrostatic pressure

    International Nuclear Information System (INIS)

    Kraak, W.; Herrmann, R.; Nachtwei, G.

    1985-01-01

    Magnetotransport properties of n-inversion layers in grain boundaries of p-InSb bicrystals are investigated under high hydrostatic pressure up to 10 3 MPa. A rapid decrease of the carrier concentration in the inversion layer is observed when hydrostatic pressure is applied. A simple model taking into account the pressure dependence of the energy band structure of pure InSb is proposed to describe this behaviour. (author)

  18. Radiation measurements by pn junction InSb detector at the temperature from 4.2 K to 115 K

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yoshihara, Fumiki; Nouchi, Ryo; Sugiura, Osamu; Murase, Yasuhiro; Nakamura, Tatsuya; Katagiri, Masaki

    2003-01-01

    We fabricated the pn junction-type detectors on a p-type InSb substrate. Both sides of the InSb substrate were etched using a mixture of nitric and lactic acids. On the top side surface, Sn and Al were deposited by heat evaporation and then the Sn was diffused into the p-type InSb by lamp annealing and resulted in the n-type layer. Based on the confirmation of the performance of the InSb detector at temperatures of 0.5 K and 4.2 K, we concentrated on the measurement of alpha particles by the pm junction-type InSb detectors at higher operating temperatures of up to 115 K. The InSb detector showed a wide temperature operating range. We can conclude that all of the voltage was induced slowly by the holes at 4.2 K and mainly as a result of electrons at 77 K. (T. Tanaka)

  19. Infrared absorption in pseudobinary InSb1-xBix compounds

    International Nuclear Information System (INIS)

    El-Den, M.B.; Mina, N.K.; Samy, A.M.; El-Mously, M.K.

    1988-08-01

    The group III-V pseudobinary InSb 1-x Bi x compounds, with x = 0, 0.2 and 0.04, were prepared in thin ribbon forms (30 μ) by splat cooling in air. The optical absorption α(λ) was measured in the wavelength range from 4 to 15 μm. The optical energy gap E opt. , was calculated for the three compounds. A shift of the absorption edge towards longer wavelengths with increasing Bi content was observed. (author). 7 refs, 4 figs

  20. Transport coefficients of InSb in a strong magnetic field

    International Nuclear Information System (INIS)

    Nakamura, Hiroaki; Ikeda, Kazuaki; Yamaguchi, Satarou

    1998-02-01

    Improvement of a superconducting magnet system makes induction of a strong magnetic field easier. This fact gives us a possibility of energy conversion by the Nernst effect. As the first step to study the Nernst element, we measured the conductivity, the Hall coefficient, the thermoelectric power and the Nernst coefficient of the InSb, which is one of candidates of the Nernst elements. From this experiment, it is concluded that the Nernst coefficient is smaller than the theoretical values. On the other hand, the conductivity, the Hall coefficient and the thermoelectric power has the values expected by the theory. (author)

  1. Status of SAT CID InSb detector technology and applications

    International Nuclear Information System (INIS)

    Chatard, J.P.; Lussereau, A.; Lorans, D.

    1985-01-01

    This paper presents SAT indium antimonide Charge Injection Devices (C.I.D) Technology, post focal plane signal processing and some applications. These detectors are constituted by MOS capacitors realized on InSb wafers using integrated circuit-like processing. When a negative voltage is applied to the structure (put it into depletion) the capacitors form integrating detectors for use in 3-5 μm band. Linear arrays constituted by a line of single capacitors, matrix arrays constituted by a group of two coupled MOS capacitors, collect and store photon generated charge carriers. In the last case, the selection of a site is accomplished by X-Y decoding technique

  2. Performance analysis of InSb based QWFET for ultra high speed applications

    International Nuclear Information System (INIS)

    Subash, T. D.; Gnanasekaran, T.; Divya, C.

    2015-01-01

    An indium antimonide based QWFET (quantum well field effect transistor) with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors (ITRS) requirements of drive current (Semiconductor Industry Association 2010). The performance of the device is investigated using the SYNOPSYS CAD (TCAD) software. InSb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation. (semiconductor devices)

  3. Sausage instability of the z-pinch in InSb

    International Nuclear Information System (INIS)

    Markus, M.; Huebner, K.

    1975-01-01

    A differential equation for the perturbations of a stationary equilibrium, which takes into account the effects of extrinsic carriers, degeneration, induction of electric field, generation and recombination of carriers is used to study the z-pinch in n-InSb at 77 K. The calculations for the azimuthal wave number m = 0 lead to three oscillating modes, one of which is unstable above a certain threshold of the axial wavelength. This instability is caused by the nonconservation of plasma carriers. (orig.) [de

  4. Noise analysis and performance of a selfscanned linear InSb detector array

    International Nuclear Information System (INIS)

    Finger, G.; Meyer, M.; Moorwood, A.F.M.

    1987-01-01

    A noise model for detectors operated in the capacitive discharge mode is presented. It is used to analyze the noise performance of the ESO nested timing readout technique applied to a linear 32-element InSb array which is multiplexed by a silicon switched-FET shift register. Analysis shows that KTC noise of the videoline is the major noise contribution; it can be eliminated by weighted double-correlated sampling. Best noise performance of this array is achieved at the smallest possible reverse bias voltage (not more than 20 mV) whereas excess noise is observed at higher reverse bias voltages. 5 references

  5. Spin-lattice relaxation times and knight shift in InSb and InAs

    International Nuclear Information System (INIS)

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  6. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    DEFF Research Database (Denmark)

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

    2011-01-01

    The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende......, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers...

  7. Compositional and structural characterisation of GaSb and GaInSb

    International Nuclear Information System (INIS)

    Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

    2005-01-01

    Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

  8. Ballistic transport and quantum interference in InSb nanowire devices

    International Nuclear Information System (INIS)

    Li Sen; Huang Guang-Yao; Guo Jing-Kun; Kang Ning; Xu Hong-Qi; Caroff, Philippe

    2017-01-01

    An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Pérot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron’s wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations. (paper)

  9. Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces

    International Nuclear Information System (INIS)

    Tereshchenko, O.E.

    2006-01-01

    The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 deg. C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 x 1), (1 x 3), (4 x 3), and (4 x 1)/c(8 x 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers

  10. Study of the impurity photoconductivity in p-InSb using epitaxial p{sup +} contacts

    Energy Technology Data Exchange (ETDEWEB)

    Eminov, Sh. O., E-mail: shikhamirem@gmail.com [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

    2016-08-15

    The optical absorption coefficient α in p{sup +}-InSb layers (with hole concentrations of p ≈ 1 × 10{sup 17}–1.2 × 10{sup 19} cm{sup –3}), grown by liquid-phase epitaxy on p-InSb substrates, is measured in the spectral range of 5-12 µm at 90 K, and the impurity photoconductivity is measured (at 60 and 90 K) in p{sup +}–p structures. It is found that a in the p{sup +} layers reaches a value of 7000 cm{sup –1} (at p ≈ 2 × 10{sup 19} cm{sup –1}). It is shown that the measured substrate value of (α ≈1–3 cm{sup –1}) is overestimated in comparison with estimates (α ≈ 0.1 cm{sup –1}) based on comparing the photoconductivity data. This discrepancy is explained by the fact that the optical transitions of holes responsible for photoconductivity are obscured by the excitation of electrons to the conduction band. The photoionization cross section for these transitions does not exceed 1 × 10{sup –15} cm{sup 2}.

  11. Indium local geometry in In-Sb-Te thin films using XANES and DFT calculations

    Science.gov (United States)

    Bilovol, V.; Gil Rebaza, A. V.; Mudarra Navarro, A. M.; Errico, L.; Fontana, M.; Arcondo, B.

    2017-12-01

    In-Sb-Te when is a thin film presents a huge difference in its electrical resistivity when transform from the amorphous (insulating) to the crystalline (conducting) phase. This property made this system one of the main phase-change materials used in the data storage industry. The change in the electrical conductivity is probably associated to a change in the bonding geometry of some of its constituents. To explore this point, we present in this work an study of the bonding geometry of In atoms in In-Sb-Te films by means of In K-edge X-ray absorption near edge structure (XANES) spectroscopy using synchrotron radiation in both as deposited (amorphous) and crystalline thin films obtained as a result of resistance (R) vs temperature (T) measurements. Comparison of the XANES spectra obtained for ternary amorphous films and binary crystalline reference films suggests that in amorphous films the bonding geometry of In atoms is tetrahedral-like. After the thermal annealing has been carried out the differences in the XANES spectra of the as deposited and the annealed films indicate that the bonding geometry of In atoms changes. Based on X-ray diffraction results and ab initio calculations in the framework of the Density Functional Theory (DFT) we show that the new coordination geometry is associated with a tendency of In atoms towards octahedral-like.

  12. Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

    Directory of Open Access Journals (Sweden)

    Ashish Kumar

    2012-03-01

    Full Text Available We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP relaxation and Elliott-Yafet (EY relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction and structural inversion asymmetry (Rashba spin-orbit interaction. The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

  13. Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

    KAUST Repository

    Sun, Jian

    2012-10-01

    Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.

  14. Dislocation-limited electron transport in InSb grown on GaAs(0 0 1)

    Energy Technology Data Exchange (ETDEWEB)

    Sato, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)]. E-mail: taku-s@jaist.ac.jp; Suzuki, T. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, 4-16-1 Okata, Atugi, Kanagawa 243-0021 (Japan); Yamada, S. [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2006-04-01

    We investigated dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(0 0 1). It is found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which indicates that the former is the origin of the latter. This behavior is well explained by pair annihilation mechanism of the threading dislocations. The electron mobility is limited by ionized donor scattering, i.e. charged dislocation scattering.

  15. 10μm pitch family of InSb and XBn detectors for MWIR imaging

    Science.gov (United States)

    Gershon, G.; Avnon, E.; Brumer, M.; Freiman, W.; Karni, Y.; Niderman, T.; Ofer, O.; Rosenstock, T.; Seref, D.; Shiloah, N.; Shkedy, L.; Tessler, R.; Shtrichman, I.

    2017-02-01

    There has been a growing demand over the past few years for infrared detectors with a smaller pixel dimension. On the one hand, this trend of pixel shrinkage enables the overall size of a given Focal Plan Array (FPA) to be reduced, allowing the production of more compact, lower power, and lower cost electro-optical (EO) systems. On the other hand, it enables a higher image resolution for a given FPA area, which is especially suitable in infrared systems with a large format that are used with a wide Field of View (FOV). In response to these market trends SCD has developed the Blackbird family of 10 μm pitch MWIR digital infrared detectors. The Blackbird family is based on three different Read- Out Integrated Circuit (ROIC) formats: 1920×1536, 1280×1024 and 640×512, which exploit advanced and mature 0.18 μm CMOS technology and exhibit high functionality with relatively low power consumption. Two types of 10 μm pixel sensing arrays are supported. The first is an InSb photodiode array based on SCD's mature planar implanted p-n junction technology, which covers the full MWIR band, and is designed to operate at 77K. The second type of sensing array covers the blue part of the MWIR band and uses the patented XBn-InAsSb barrier detector technology that provides electro-optical performance equivalent to planar InSb but at operating temperatures as high as 150 K. The XBn detector is therefore ideal for low Size, Weight and Power (SWaP) applications. Both sensing arrays, InSb and XBn, are Flip-chip bonded to the ROICs and assembled into custom designed Dewars that can withstand harsh environmental conditions while minimizing the detector heat load. A dedicated proximity electronics board provides power supplies and timing to the ROIC and enables communication and video output to the system. Together with a wide range of cryogenic coolers, a high flexibility of housing designs and various modes of operation, the Blackbird family of detectors presents solutions for EO

  16. The investigation of radiation induced defects in MgO

    International Nuclear Information System (INIS)

    Puetz, M.

    1990-05-01

    In this paper Frenkel defects were induced in MgO by 3 MeV electrons at low temperature. These defects were investigated by measurements of the optical absorption, by investigating the lattice parameters and Huang diffuse scattering. (WL)

  17. One-dimensional electron transport and thermopower in an individual InSb nanowire

    International Nuclear Information System (INIS)

    Zhou, F; Seol, J H; Moore, A L; Shi, L; Ye, Q L; Scheffler, R

    2006-01-01

    We have measured the electrical conductance and thermopower of a single InSb nanowire in the temperature range from 5 to 340 K. Below temperature (T) 220 K, the conductance (G) shows a power-law dependence on T and the current (I)-voltage (V) curve follows a power-law dependence on V at large bias voltages. These features are the characteristics of one-dimensional Luttinger liquid (LL) transport. The thermopower (S) also shows linear temperature dependence for T below 220 K, in agreement with the theoretical prediction based on the LL model. Above 220 K, the power law and linear behaviours respectively in the G-T and S-T curves persist but with different slopes from those at low temperatures. The slope changes can be explained by a transition from a single-mode LL state to a multi-mode LL state

  18. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    International Nuclear Information System (INIS)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B.

    2014-01-01

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature

  19. Nonlinear effects during sound propagation in n-InSb at 4.20K

    International Nuclear Information System (INIS)

    Ilisavskij, Yu.V.; Chiplis, D.

    1975-01-01

    The absorption of transverse sound and the influence of longitudinal electric and magnetic fields thereon were studied in n-InSb at 4.2 0 K over a wide range of frequencies and intensities. The electron absorption of sound was found to depend strongly on input intensity due to the heating of electrons by the sound wave. It was discovered that the observed non-linearity was suppressed by the electric field. On the basis of comparison of the experimental results with the existing theories it is concluded that during the heating of electrons by sound, apart from changes in mobility, the carrier concentration in the conductivity band is also substantially changed. The measurements in the magnetic field agree qualitatively with the two-band conductivity model. (author)

  20. Calculation of electrostatic multipoles of electron localized in narrow-band InSb spherical nanolayer

    International Nuclear Information System (INIS)

    Amirkhanyan, S.M.; Kazaryan, E.M.; Sarkisyan, H.A.

    2015-01-01

    Behavior of electron in narrow-gap spherical nanolayer of InSb is considered. Dispersion law of electron is described within the double-gap Kane model, when arises a necessity for considering of Klein-Gordon equation for description of behavior of electrons and light holes. Dipole and quadrupole momentums of electron in specified systems are defined on the base of the obtained expressions. It is shown, that average value of dipole momentum equals to zero and that for definition of average value of tensor of quadrupole momentum it is enough to calculate the average value of diagonal z-component of this tensor. Electrostatic potentials and tensions of fields created by electron located in different quantum states are defined

  1. Voltage transients in thin-film InSb Hall sensor

    Science.gov (United States)

    Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

    The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

  2. Dewetting and Segregation of Zn-Doped InSb in Microgravity Experiments

    Science.gov (United States)

    Ostrogorsky, A. G.; Marin, C.; Duffar, T.; Volz, M.

    2009-01-01

    In directional solidification, dewetting is characterized by the lack of contact between the crystal and the crucible walls, due to the existence of a liquid meniscus at the level of the solid-liquid interface. This creates a gap of a few tens of micrometers between the crystal and the crucible. One of the immediate consequences of this phenomenon is the dramatic improvement of the quality of the crystal. This improvement is partly due to the modification of the solid-liquid interface curvature and partly to the absence of sticking and spurious nucleation at the crystal-crucible interface. Dewetting has been, commonly observed during the growth of semiconductors in crucibles under microgravity conditions where it appears to be very stable: the gap between the crystal and the crucible remains constant along several centimetres of growth. The physical models of the phenomenon are well established and they predict that dewetting should not occur in microgravity, if sufficient static pressure is imposed on the melt, pushing it towards the crucible. We present the results of InSb(Zn) solidification experiments conducted at the International Space Station (ISS) where, in spite of a spring exerting a pressure on the liquid, partial dewetting did occur. This surprising result is discussed in terms of force exerted .by the spring on the liquid and of possibility that the spring did not work properly. Furthermore, it appears that the segregation of the Zn was not affected by the occurrence of the dewetting. The data suggest that there was no significant interference of convection with segregation of Zn in InSb.

  3. Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Wagener, M.C. [Physics Department, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-01

    InSb epilayers on GaAs substrates are analyzed using infrared reflectance spectroscopy, but employing a modified Drude oscillator formula. The modified formula enables the determination of 13 parameters: six dielectric parameters for both layer and substrate separately, as well as the thickness of the layer. The formula is tested against previously published data, and to characterize layers grown in this laboratory.

  4. Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Wagener, M.C.

    2009-01-01

    InSb epilayers on GaAs substrates are analyzed using infrared reflectance spectroscopy, but employing a modified Drude oscillator formula. The modified formula enables the determination of 13 parameters: six dielectric parameters for both layer and substrate separately, as well as the thickness of the layer. The formula is tested against previously published data, and to characterize layers grown in this laboratory.

  5. Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

    International Nuclear Information System (INIS)

    Li, Hao; Geng, Yongyou; Wu, Yiqun

    2012-01-01

    In the current work, the etching selectivity of the AgInSbTe phase-change film in laser thermal lithography is reported for the first time. Film phase change induced by laser irradiation and etching selectivity to crystalline and amorphous states in different etchants, including hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid, sodium hydroxide, sodium sulfide, ammonium sulfide and ammonium hydroxide, are investigated. The results indicated that ammonium sulfide solvent (2.5 mol/L) had excellent etching selectivity to crystalline and amorphous states of the AgInSbTe film, and the etching characteristics were strongly influenced by the laser power density and laser irradiation time. The etching rate of the crystalline state of the AgInSbTe film was 40.4 nm/min, 20 times higher than that of the amorphous state under optimized irradiation conditions (power density: 6.63 mW/μm 2 and irradiation time: 330 ns), with ammonium sulfide solvent (2.5 mol/L) as etchant. The step profile produced in the selective etching was clear, and smooth surfaces remained both on the step-up and step-down with a roughness of less than 4 nm (10 x 10 μm). The excellent performance of the AgInSbTe phase-change film in selective etching is significant for fabrication of nanostructures with super-resolution in laser thermal lithography. (orig.)

  6. Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

    KAUST Repository

    Sun, Jian; Kosel, Jü rgen

    2012-01-01

    Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition

  7. Molecular beam epitaxy growth of InSb1-xBix thin films

    DEFF Research Database (Denmark)

    Yuxin Song; Shumin Wang; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  8. Multiband model for tunneling in MgB2 junctions

    NARCIS (Netherlands)

    Brinkman, Alexander; Golubov, Alexandre Avraamovitch; Rogalla, Horst; Dolgov, O.V.; Kortus, J.; Kong, Y.; Jepsen, O.; Andersen, O.K.

    2002-01-01

    A theoretical model for quasiparticle and Josephson tunneling in multiband superconductors is developed and applied to MgB2-based junctions. The gap functions in different bands in MgB2 are obtained from an extended Eliashberg formalism, using the results of band structure calculations. The

  9. Design of a multiband near-infrared sky brightness monitor using an InSb detector.

    Science.gov (United States)

    Dong, Shu-Cheng; Wang, Jian; Tang, Qi-Jie; Jiang, Feng-Xin; Chen, Jin-Ting; Zhang, Yi-Hao; Wang, Zhi-Yue; Chen, Jie; Zhang, Hong-Fei; Jiang, Hai-Jiao; Zhu, Qing-Feng; Jiang, Peng; Ji, Tuo

    2018-02-01

    Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

  10. Split-Channel Ballistic Transport in an InSb Nanowire

    Science.gov (United States)

    Estrada Saldaña, Juan Carlos; Niquet, Yann-Michel; Cleuziou, Jean-Pierre; Lee, Eduardo J. H.; Car, Diana; Plissard, Sébastien R.; Bakkers, Erik P. A. M.; De Franceschi, Silvano

    2018-04-01

    We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels.

  11. Effects of Nernst-Ettinghausen, Seebeck and Hall in Sb sub 2 Te sub 3 monocrystals

    CERN Document Server

    Zhitinskaya, M K; Ivanova, L D

    2002-01-01

    In Sb sub 2 Te sub 3 top-quality single crystals grown following the Czochralski method within 77-420 K range one measured temperature dependences of the following components of kinetic coefficients: electrical conductivity within sigma sub 1 sub 1 chip plane, of the Seebeck S sub 1 sub 1 and S sub 3 sub 3 , of the Hall R sub 1 sub 2 sub 3 and R sub 3 sub 2 sub 1 and of the Nernst-Ettinghausen Q sub 1 sub 2 sub 3. One analyzed the derived results on the basis of the phenomenological theory. It is shown that the essential peculiarities of the experimental data may be explained in terms of a two-region model with anisotropy of mobility of the first and second types holes towards the chip (epsilon sub g approx = 0.3 eV), as well as, the energy gap between the ground and auxiliary extremes of the valence band (DELTA epsilon subupsilon approx 0.1 eV)

  12. Diamond turning of small Fresnel lens array in single crystal InSb

    International Nuclear Information System (INIS)

    Jasinevicius, R G; Duduch, J G; Cirino, G A; Pizani, P S

    2013-01-01

    A small Fresnel lens array was diamond turned in a single crystal (0 0 1) InSb wafer using a half-radius negative rake angle (−25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a ‘mechanical lithography’ process in single crystal semiconductors. (paper)

  13. Evaluation of a 32 x 32 InSb CCD for use in astronomy

    Science.gov (United States)

    Forrest, W. J.; Pipher, J. L.

    1983-01-01

    We have been fortunate to receive several infrared CCD array detectors on loan from Santa Barbara Research Center. The devices are evaluation samples, not commercially available at this time. Dr. Alan Hoffman of SBRC has made the arrangements for this loan and provided considerable technical support to this project. One aim of this project has been to evaluate the performance potential of this array technology, using astronomical objects. A quick summary of our findings is given. In short, we have found the imaging properties to be excellent under both low and high background conditions and the sensitivity to be quite good (each pixel is competitive with current InSb single-detector systems in use for astronomy). We anticipate improved low-background performance when we run these detectors at a lower and more stable temperature. The device characteristics are described, laboratory testing is summarized, and the first astronomical imaging is presented. Various circuits developed (clocks, clock drivers, DC supplies, clamp-amplifier, and a real time display system) are given.

  14. Design of a multiband near-infrared sky brightness monitor using an InSb detector

    Science.gov (United States)

    Dong, Shu-cheng; Wang, Jian; Tang, Qi-jie; Jiang, Feng-xin; Chen, Jin-ting; Zhang, Yi-hao; Wang, Zhi-yue; Chen, Jie; Zhang, Hong-fei; Jiang, Hai-jiao; Zhu, Qing-feng; Jiang, Peng; Ji, Tuo

    2018-02-01

    Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

  15. High magnetic field observation of the resonance donor states of S in InSb

    International Nuclear Information System (INIS)

    Porowski, S.; Konczewicz, L.; Kowalski, J.

    1981-01-01

    Electrical transport measurements in InSb heavily doped with sulfur (n approximately 5x10 18 cm -3 ) are performed. At T = 4.2 K the Hall coefficient and transverse magnetoresistivity are measured as a function of pressure up to 2100 MPa and magnetic field up to 18 T. At the highest pressure, a decrease of the frequency and a decrease of the damping of Shubnikov-de Haas oscillations are observed. These effects are explained as a result of the transfer of electrons from the conduction band to the resonance states of sulfur. At atmospheric pressure these states are 0.55 eV above the bottom of conduction band. In the lower pressure range, the experimental dependence of the effective Dingle temperature T*sub(D) = Tsub(D) + Tsub(i) can be explained by the model in which the scattering by ionized impurities and short-range potentials are taken into account. At the highest pressures a change of inhomogeneity of carrier concentration due to the transfer of electrons to the resonance states has to be considered. (author)

  16. Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

    2015-01-01

    We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10 20  cm −3 obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed

  17. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    Energy Technology Data Exchange (ETDEWEB)

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  18. High pressure driven superconducting critical temperature tuning in Sb{sub 2}Se{sub 3} topological insulator

    Energy Technology Data Exchange (ETDEWEB)

    Anversa, Jonas [Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Escola de Engenharia Civil, Faculdade Meridional, 99070-220, Passo Fundo, RS (Brazil); Chakraborty, Sudip, E-mail: sudiphys@gmail.com [Condensed Matter Theory Group, Department of Physics and Astronomy, Box 516, Uppsala University, S-75120 Uppsala (Sweden); Piquini, Paulo [Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Ahuja, Rajeev [Condensed Matter Theory Group, Department of Physics and Astronomy, Box 516, Uppsala University, S-75120 Uppsala (Sweden); Applied Materials Physics, Department of Materials and Engineering, Royal Institute of Technology (KTH), S-100 44 Stockholm (Sweden)

    2016-05-23

    In this letter, we are reporting the change of superconducting critical temperature in Sb{sub 2}Se{sub 3} topological insulator under the influence of an external hydrostatic pressure based on first principles electronic structure calculations coupled with Migdal–Eliashberg model. Experimentally, it was shown previously that Sb{sub 2}Se{sub 3} was undergoing through a transition to a superconducting phase when subjected to a compressive pressure. Our results show that the critical temperature increases up to 6.15 K under the pressure unto 40 GPa and, subsequently, drops down until 70 GPa. Throughout this pressure range, the system is preserving the initial Pnma symmetry without any structural transformation. Our results suggest that the possible relevant mechanism behind the superconductivity in Sb{sub 2}Se{sub 3} is primarily the electron–phonon coupling.

  19. Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

    Science.gov (United States)

    Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

    2018-05-01

    We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

  20. Tetragonal to orthorhombic transformation in Mg-PSZ

    International Nuclear Information System (INIS)

    Liu, Z.W.; Spargo, A.E.C.; Hannink, R.H.J.; Drennan, J.

    1997-01-01

    The phase transformation from tetragonal to orthorhombic in MgO-partially-stabilized zirconia has been investigated by using high resolution transmission electron microscopy (HRTEM). Evidences are given to show that orthorhombic ZrO 2 frequently observed in transmission electron microscopy (TEM) thin foil studies was induced by dimpling and polishing during the specimen preparation. It was also found that the orthorhombic to monoclinic transformation was less sensitive to stress that the tetragonal to monoclinic transformation. 20 refs., 1 tab., 8 figs

  1. Individual Low-Energy Toroidal Dipole State in Mg 24

    Science.gov (United States)

    Nesterenko, V. O.; Repko, A.; Kvasil, J.; Reinhard, P.-G.

    2018-05-01

    The low-energy dipole excitations in Mg 24 are investigated within the Skyrme quasiparticle random phase approximation for axial nuclei. The calculations with the force SLy6 reveal a remarkable feature: the lowest IπK =1-1 excitation (E =7.92 MeV ) in Mg 24 is a vortical toroidal state (TS) representing a specific vortex-antivortex realization of the well-known spherical Hill's vortex in a strongly deformed axial confinement. This is a striking example of an individual TS which can be much more easily discriminated in experiment than the toroidal dipole resonance embracing many states. The TS acquires the lowest energy due to the huge prolate axial deformation in Mg 24 . The result persists for different Skyrme parametrizations (SLy6, SVbas, SkM*). We analyze spectroscopic properties of the TS and its relation with the cluster structure of Mg 24 . Similar TSs could exist in other highly prolate light nuclei. They could serve as promising tests for various reactions to probe a vortical (toroidal) nuclear flow.

  2. Properties of InSbN grown on GaAs by radio frequency nitrogen plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lim, K P; Yoon, S F; Pham, H T

    2009-01-01

    We report the growth of InSbN on a lattice-mismatched GaAs substrate using radio frequency nitrogen plasma-assisted molecular beam epitaxy. The effects of a two-step thin InSb buffer layer grown at 330 and 380 deg. C and substrate temperature (270-380 deg. C) on the properties of the InSbN are studied. The crystalline quality of the InSbN is significantly improved by the two-step buffer layer due to defect suppression. The shifting in the absorption edge of the InSbN from ∼5 to 8 μm following an increase in the substrate temperature is correlated with the reduction in free carrier concentration from ∼10 18 to 10 16 cm -3 and increase in concentration of N substituting Sb from ∼0.2 to 1%. These results will be beneficial to those working on the pseudo-monolithic integration of InSbN detectors on a GaAs platform.

  3. In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix

    International Nuclear Information System (INIS)

    Semenov, A. N.; Lyublinskaya, O. G.; Solov’ev, V. A.; Mel’tser, B. Ya.; Ivanov, S. V.

    2008-01-01

    Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the reflection of high-energy electron diffraction patterns was used to study in situ the kinetics of the formation of InSb quantum dots and an InAsSb wetting layer. The effects of the substrate temperature, the shutter operation sequence, and the introduction of growth interruptions on the properties of the array of InSb quantum dots are examined. Introduction of a growth interruption immediately after completing the exposure of the InAs surface to the antimony flux leads to a reduction in the nominal thickness of InSb and to an enhancement in the uniformity of the quantum-dot array. It is shown that, in the case of deposition of submonolayer-thickness InSb/InAs quantum dots, the segregation layer of InAsSb plays the role of the wetting layer. The Sb segregation length and segregation ratio, as well as their temperature dependences, are determined.

  4. Pseudopotential approach to superconductivity in MgB2

    International Nuclear Information System (INIS)

    Sharma, K.S.; Bhargava, Nidhi; Jain, Ritu; Goyal, Varsha; Sharma, Ritu; Sharma, Smita

    2010-01-01

    Superconductivity in MgB 2 has been re-examined in BCS-Eliashberg framework by employing Mc-Millan's T c -equation and form factors of MgB 2 computed from the form factors of component metals (Model-I). The empty core model pseudopotential due to Ashcroft and random phase approximation form of dielectric screening due to Gellmann and Brueckner are used in the present work. An excellent agreement between the present values and other theoretically computed values of T c and with the relevant experimental data for MgB 2 confirms the validity of the present approach. The explicit dependence of λ and T c on the isotopic masses of Mg and B, as revealed from the present work, confirms the role of lattice vibrations in the superconducting behaviour of MgB 2 and the high value of T c in it may be attributed to the phonon mediated e-e interaction coupled with higher values of phonon frequencies due to light mass of B atoms. It has also been observed that the pseudo-atom model (Model-II) with appropriate choice of the potential parameter r c successfully explains high value of T c and isotope effect in MgB 2 , confirming the prominent role played by electron-phonon interaction in the high-T c superconductivity observed in MgB 2 . The isotope effect exponent α-values obtained from the two models are in complete agreement with each other and the present value α = 0.46 is also much closer to the BCS value of 0.5. Interaction strength N 0 V values obtained from the two models are also in perfect agreement with each other and the present value N 0 V = 0.48 suggests that MgB 2 is a strong coupling superconductor. (author)

  5. Positronium deuteride and hydride in MgO crystals

    OpenAIRE

    Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

    1996-01-01

    Low-temperature positron lifetime and Doppler broadening measurements were made in MgO crystals containing D− or H− ions in order to investigate the temperature dependence of the positron trapping by D− and H− ions and elucidate the possible formation of PsD (PsH) states. Positrons are trapped at D− and H− ions once the oxygen vacancies, which are more effective positron traps, are eliminated by annealing the crystals at high temperatures in a reducing atmosphere. From the temperature depende...

  6. Comparative analysis of oxide phase formation and its effects on electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jaeyel [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Sehun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Jungsub; Yang, Changjae; Kim, Sujin; Seok, Chulkyun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Jinsub [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 (Korea, Republic of); Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)

    2012-06-01

    We report on the changes in the interfacial phases between SiO{sub 2} and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 Degree-Sign C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO{sub 2}/InSb MOS structures. - Highlights: Black-Right-Pointing-Pointer We report the quantitative analysis of interfacial oxides at the SiO{sub 2}/InSb interface. Black-Right-Pointing-Pointer Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. Black-Right-Pointing-Pointer As-grown and annealed samples showed different compositions of oxide phases. Black-Right-Pointing-Pointer Considerable reduction of antimony oxide phases was observed during annealing. Black-Right-Pointing-Pointer Interface trap densities at the SiO{sub 2}/InSb interface were calculated.

  7. HRTEM investigation of orthorhombic phase in Mg-PSZ

    International Nuclear Information System (INIS)

    Liu, Z.W.; Spargo, A.E.C.; Hannink, R.H.J.

    1997-01-01

    Tetragonal, orthorhombic and monoclinic phases are only slight distortions of the cubic structure. Due to minor differences in unit cell parameters it is difficult to distinguish these phases only by high resolution images. However, using high resolution transmission electron microscopy (HRTEM) observation in combination with image simulation and digital Fourier transformation of HRTEM images, it was found that one tetragonal precipitate can be transformed to several orthorhombic domains with different orientations in MgO-partially-stabilized zirconia (Mg-PSZ). The lattice correspondence between two adjacent orthorhombic domains is such that their b axes are parallel, while their a axes are perpendicular to each other. Also it was found that cubic ZrO 2 could be transformed to orthorhombic ZrO 2 . 8 refs., 1 tab., 4 figs

  8. Positronium deuteride and hydride in MgO crystals

    International Nuclear Information System (INIS)

    Monge, M.A.; Pareja, R.; Gonzalez, R.; Chen, Y.

    1996-01-01

    Low-temperature positron lifetime and Doppler broadening measurements were made in MgO crystals containing D - or H - ions in order to investigate the temperature dependence of the positron trapping by D - and H - ions and elucidate the possible formation of PsD (PsH) states. Positrons are trapped at D - and H - ions once the oxygen vacancies, which are more effective positron traps, are eliminated by annealing the crystals at high temperatures in a reducing atmosphere. From the temperature dependence of the annihilation parameters the positron trapping coefficients for D - and H - centers were shown to increase with temperature between 100-300 K. The lifetime of the PsD (PsH) state is (650±30) ps and temperature independent. The dissociation rate of the PsD (PsH) state into D (H) and Ps is also temperature independent. No isotopic effect was observed. (author)

  9. Superconductivity near ferromagnetism in MgCNi3

    International Nuclear Information System (INIS)

    Rosner, H.; Weht, R.; Johannes, M.; Pickett, W.E.; Tosatti, E.

    2001-06-01

    Superconductivity and ferromagnetism have been believed to be incompatible over any extended temperature range until certain specific examples - RuSr 2 GdCu 2 O 8 and UGe 2 - have arisen in the past 2-3 years. The discovery of superconductivity above 8 K in MgCNi 3 , which is primarily the ferromagnetic element Ni and is strongly exchange-enhanced, provides a probable new and different example. This compound is shown here to be near ferromagnetism, requiring only hole-doping by 12% substitution of Mg by Na or Li. This system will provide the means to probe coupling, and possible coexistence, of these two forms of collective behavior without the requirement of pressure. (author)

  10. Directional scanning tunneling spectroscopy in MgB2

    International Nuclear Information System (INIS)

    Iavarone, M.; Karapetrov, G.; Koshelev, A.E.; Kwok, W.K.; Crabtree, G.W.; Hinks, D.G.; Cook, R.; Kang, W.N.; Choi, E.M.; Kim, H.J.; Lee, S.I.

    2003-01-01

    The superconductivity in MgB 2 has a two-band character with the dominating band having a 2D character and the second band being isotropic in the three dimensions. We use tunneling microscopy and spectroscopy to reveal the two distinct energy gaps at Δ 1 =2.3 meV and Δ 2 =7.1 meV. Different spectral weights of the partial superconducting density of states are a reflection of different tunneling directions in this multi-band system. The results are consistent with the existence of two-band superconductivity in the presence of strong interband superconducting pair interaction and quasiparticle scattering. The temperature evolution of the tunneling spectra shows both gaps vanishing at the bulk T c

  11. Observation of pseudogap in MgB2

    Science.gov (United States)

    Patil, S.; Medicherla, V. R. R.; Ali, Khadiza; Singh, R. S.; Manfrinetti, P.; Wrubl, F.; Dhar, S. K.; Maiti, Kalobaran

    2017-11-01

    We investigate the electronic structure of a specially prepared highly dense conventional high temperature superconductor, MgB2, employing high resolution photoemission spectroscopy. The spectral evolution close to the Fermi energy is commensurate to BCS descriptions as expected. However, the spectra in the wider energy range reveal the emergence of a pseudogap much above the superconducting transition temperature indicating an apparent departure from the BCS scenario. The energy scale of the pseudogap is comparable to the energy of the E2g phonon mode responsible for superconductivity in MgB2 and the pseudogap can be attributed to the effect of electron-phonon coupling on the electronic structure. These results reveal a scenario of the emergence of the superconducting gap within an electron-phonon coupling induced pseudogap and have significant implications in the study of high temperature superconductors.

  12. Ionizing radiation effects in MgAl2O4

    International Nuclear Information System (INIS)

    Ibarra Sanchez, A.

    1990-01-01

    The effect of ionizing radiation in MgAl2O4 has been studied, paying special interest to the influence of the high concentration of intrinsic dsefects of this material. Optical absorption, ESR, photoluminiscence, radioluminiscence, and thermoluminiscence are the main techniques used. The ionizing radiation induces to formation of V centres. During the work its characteristics (structure, thermal stability, absorption spectra, etc.) has been studied. The thermoluminiscence spectra allowed the discovery of several charge release processes between 85 and 650 K, all of them associated to electron release. The V-centres and several impurities (Cr, Mn,...) appear as recombination centres. The obtained data show that the kinetic of these charge release processes is regulated by the presence of a point defect with a very high concentration. This defect is an electron trap and its structure is an Al ion in a lattice site of tetraedral symmetry. (Author)

  13. MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix

    International Nuclear Information System (INIS)

    Chen Dongliang; Wu Ziyu; Wei Shiqiang

    2006-01-01

    The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO 2 matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO 2 host matrix are mainly due to the interaction of InSb NPs and a-SiO 2 matrix. It can be interpreted as both a local single-site effect on μ 0 (E) due to the effect of a-SiO 2 matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO 2 matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles. (authors)

  14. First-principles study of size-, surface- and mechanical strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yong [School of Mathematics, Physics and Energy Engineering, Hunan Institute of Technology, Hengyang 421002 (China); Xie, Zhong-Xiang, E-mail: xiezxhu@163.com [School of Mathematics, Physics and Energy Engineering, Hunan Institute of Technology, Hengyang 421002 (China); Yu, Xia; Wang, Hai-Bin; Deng, Yuan-Xiang [School of Mathematics, Physics and Energy Engineering, Hunan Institute of Technology, Hengyang 421002 (China); Ning, Feng, E-mail: fning@gxtc.edu.cn [College of Physics and Electronic Engineering, Guangxi Teachers Education University, Nanning 530001 (China)

    2016-08-06

    Using first-principle calculations with density functional theory, we investigated the modification of electronic properties in zinc-blende (ZB) and wurtzite (WZ) InSb nanowires (NWs) grown along the [111] and [0001] directions for different size, different surface coverage and different mechanical strain. The results show that before the surface passivation, ZBNWs and WZNWs exhibit the metallic character and the semiconductor character, respectively. WZNWs show a crossover from a direct to an indirect as diameter decreases. After the surface passivation, both ZBNWs and WZNWs are found to be direct-gap character. The electronic band structure shows a significant response to changes in surface passivation with pseudo hydrogen and halogen. The band structure with mechanical strain is strongly dependent on the crystal orientation and the NW diameter. In ZBNWs, compressive strain induces the indirect band gap character, whereas tensile strain can not form it. WZNWs have various strain dependence in that both compressive and tensile strain make InSb show a direct band gap character. A brief analysis of these results is given. - Highlights: • InSb nanowires with different surfaces can show the different band structures. • Band gap magnitude of InSb nanowires depends on the suppression of surface states. • Different types of mechanical strains show the different effect on the band structure of the InSb nanowires.

  15. Super-resolution by elliptical bubble formation with PtOx and AgInSbTe layers

    International Nuclear Information System (INIS)

    Kim, Jooho; Hwang, Inoh; Yoon, Duseop; Park, Insik; Shin, Dongho; Kikukawa, Takashi; Shima, Takayuki; Tominaga, Junji

    2003-01-01

    The recording and retrieval of signals below 100 nm mark length were attempted with elliptical bubble-type super-resolution technology with platinum oxide (PtO x ) and ductile AgInSbTe layers, using the same optical system as that of a digital versatile disk (a 635 nm wavelength red laser system). The carrier-to-noise ratio (CNR) of over 47 dB for 100 nm mark length signals (over 43 dB for 80 nm mark length signals) was obtained, which can be considered as a commercially acceptable level of CNR. The recording mechanism of the sample disk was shown through the transmission electron microscopy cross-section image observation to be by rigid elliptical bubble formation at the PtO x layer located between the AgInSbTe layers. The results of this report represent the potential for a much higher-density storage using the red laser system and a subterabyte optical storage using the blue laser system

  16. 60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

    Energy Technology Data Exchange (ETDEWEB)

    Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2014-10-14

    Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

  17. Phase equilibria melt-solid in the systems Pb-InSb-CaSb and Pb-InCs-GaAs

    International Nuclear Information System (INIS)

    Grebenyuk, A.M.; Charykov, N.A.; Puchkov, L.V.

    1992-01-01

    Results of experimental investigation and thermodynamic calculation of fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs thernary systems, which haven't been investigated earlier, are presented. Fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs systems contain two crystallization fields: solid solutions of In x Ga 1-x Sb and Pb, In x Ga 1-x As and Pb. The latter fields are retained against Pb figurative point and conform to 582 K < T < 593 K crystallization temperatures

  18. Influence of Contact Angle, Growth Angle and Melt Surface Tension on Detached Solidification of InSb

    Science.gov (United States)

    Wang, Yazhen; Regel, Liya L.; Wilcox, William R.

    2000-01-01

    We extended the previous analysis of detached solidification of InSb based on the moving meniscus model. We found that for steady detached solidification to occur in a sealed ampoule in zero gravity, it is necessary for the growth angle to exceed a critical value, the contact angle for the melt on the ampoule wall to exceed a critical value, and the melt-gas surface tension to be below a critical value. These critical values would depend on the material properties and the growth parameters. For the conditions examined here, the sum of the growth angle and the contact angle must exceed approximately 130, which is significantly less than required if both ends of the ampoule are open.

  19. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.

    Science.gov (United States)

    Chen, Xin; Zheng, Yonghui; Zhu, Min; Ren, Kun; Wang, Yong; Li, Tao; Liu, Guangyu; Guo, Tianqi; Wu, Lei; Liu, Xianqiang; Cheng, Yan; Song, Zhitang

    2018-05-01

    Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb 2 Te alloy. Sc 0.1 Sb 2 Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb 2 Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

  20. Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Godbole, M., E-mail: mohit.godbole@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Coetsee, E.; Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Neethling, J.H.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 {mu}m. In this particular study, the dots were grown at 450 Degree-Sign C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 {mu}m while the best spacer thickness was found to be 200 nm.

  1. Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

    International Nuclear Information System (INIS)

    Godbole, M.; Olivier, E.J.; Coetsee, E.; Swart, H.C.; Neethling, J.H.; Botha, J.R.

    2012-01-01

    Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 μm. In this particular study, the dots were grown at 450 °C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 μm while the best spacer thickness was found to be 200 nm.

  2. Evaporation of tetramers in Sb4n clusters and conditions for the formation of Sb2n+1 clusters

    International Nuclear Information System (INIS)

    Rayane, D.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

    1989-01-01

    Antimony clusters are produced by the inert gas condensation technique. They are found to be built from Sb 4 units. The fragmentation by evaporation of Sb 4 units is studied as a function of the excess energy in the cluster. By this way the binding energy of the Sb 4 units in the cluster is found to be about 1.5 eV, well below the binding energy of a Sb atom in the bulk and in Sb 4 (≅3 eV). The evolution of ionization potentials of Sb 4n clusters confirms that their structure is probably non metallic. Finally the possible metastable character of this Sb 4n structure is discussed. (orig.)

  3. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

    Science.gov (United States)

    Levchenko, Iryna; Tomashyk, Vasyl; Stratiychuk, Iryna; Malanych, Galyna; Korchovyi, Andrii; Kryvyi, Serhii; Kolomys, Oleksandr

    2018-04-01

    The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical-mechanical polishing with the (NH4)2Cr2O7-HBr-CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7-HBr-ethylene glycol solutions produces the clean surface of the nanosize level (R a < 0.5 nm).

  4. Hydrogen storage in Mg: a most promising material

    International Nuclear Information System (INIS)

    Jain, I.P.; Jain, A.; Lal, C.

    2009-01-01

    In the last one decade hydrogen has attracted worldwide interest as an energy carrier. This has generated comprehensive investigations on the technology involved and how to solve the problems of production, storage and applications of hydrogen. The interest in hydrogen as energy of the future is due to it being a clean energy, most abundant element in the universe, the lightest fuel and richest in energy per unit mass. Hydrogen as a fuel can be used to cook food, drive cars, jet planes, run factories and for all our domestic energy requirements. It can provide cheap electricity. In short, hydrogen shows the solution and also allows the progressive and non-traumatic transition of today's energy sources, towards feasible safe reliable and complete sustainable energy chains. The present article deals with the hydrogen storage in metal hydrides with particular interest in Mg as it has potential to become one of the most promising storage materials. Many metals combine chemically with Hydrogen to form a class of compounds known as Hydrides. These hydrides can discharge hydrogen as and when needed by raising their temperature or pressure. An optimum hydrogen-storage material is required to have various properties viz. high hydrogen capacity per unit mass and unit volume which determines the amount of available energy, low dissociation temperature, moderate dissociation pressure, low heat of formation in order to minimize the energy necessary for hydrogen release, low heat dissipation during the exothermic hydride formation, reversibility, limited energy loss during charge and discharge of hydrogen, fast kinetics, high stability against O 2 and moisture for long cycle life, cyclibility, low cost of recycling and charging infrastructures and high safety. So far most of the hydrogen storage alloys such as LaNi 5 , TiFe, TiMn 2 , have hydrogen storage capacities, not more than 2 wt% which is not satisfactory for practical application as per DOE Goal. A group of Mg based

  5. Theoretical prediction of thermodynamic activities of liquid Au-Sn-X (X=Bi, Sb, Zn) solder systems

    Energy Technology Data Exchange (ETDEWEB)

    Awe, O.E., E-mail: draweoe2004@yahoo.com [Department of Physics, University of Ibadan, Ibadan (Nigeria); Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife (Nigeria); Oshakuade, O.M. [Department of Physics, University of Ibadan, Ibadan (Nigeria)

    2017-02-15

    Molecular interaction volume model has been theoretically used to predict the thermodynamic activities of tin in Au-Sn-Bi and Au-Sn-Sb and the thermodynamic activity of zinc in Au-Sn-Zn at experimental temperatures 800 K, 873 K and 973 K, respectively. On the premise of agreement between the predicted and experimental values, we predicted the activities of the remaining two components in each of the three systems. This prediction was extended from three cross-sections to five cross-sections, and to temperature range 400–600 K, relevant for applications. Iso-activities were plotted. Results show that addition of tin reduces the tendency for chemical short range order in both Au-Sb and Au-Zn systems, while addition of gold and bismuth, respectively, reduce the tendency for chemical short range order in Sn-Sb and Au-Sn systems. Also, we found that, in the desired high-temperature region for applications, while a combination of chemical order and miscibility of components exist in both Au-Sn-Bi and Au-Sn-Zn systems, only chemical order exist in the Au-Sn-Sb system. Results, further show that increase in temperature reduces the phase separation tendency in Au-Sn-Bi system.

  6. Exotic topological insulator states and topological phase transitions in Sb2Se3-Bi2Se3 heterostructures

    KAUST Repository

    Zhang, Qianfan

    2012-03-27

    Topological insulator is a new state of matter attracting tremendous interest due to its gapless linear dispersion and spin momentum locking topological states located near the surface. Heterostructures, which have traditionally been powerful in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb 2Se 3-Bi 2Se 3 heterostructures by first-principle simulation and discovered that an exotic topological state exists. Surprisingly, the state migrates from the nontrivial Bi 2Se 3 into the trivial Sb 2Se 3 region and spreads across the entire Sb 2Se 3 slab, extending beyond the concept of "surface" state while preserving all of the topological surface state characteristics. This unusual topological state arises from the coupling between different materials and the modification of electronic structure near Fermi energy. Our study demonstrates that heterostructures can open up opportunities for controlling the real-space distribution of the topological state and inducing quantum phase transitions between topologically trivial and nontrivial states. © 2012 American Chemical Society.

  7. Atomic structure determination of InSb(100)c(4x4) and c(8x2)phases by X-ray photoelectron diffraction

    International Nuclear Information System (INIS)

    Carvalho, V.E. de; Soares, E.A.; Magalhaes, M.R.P.; Paniago, R.; Siervo, A. de; Landers, R.

    2004-01-01

    Full text: The (100) surfaces of III-V compound semiconductors exhibit a variety of surface reconstructions that have attracted a lot of attention because of their importance in both homo epitaxial and heteroepitaxial growth. In the special case of the narrow bandgap InSb compound semiconductor its potential application in high-speed electronic and optoelectronic devices has encourage many studies of its (100) surface atomic structure. Among the reconstructions presented by the InSb(100) surface two of them have received more attention, that is, the observed well-ordered In-rich c(8x2) and Sb terminated c(4x4) surfaces. The c(8x2) structure can be obtained by exposing the surface to low energy ion bombardment and annealing, whereas the c(4x4) structure involves the chemisorption of Sb onto an already Sb-terminated surface. These two structures have been studied mainly by scanning tunneling microscopy (STM) and surface X-ray diffraction (SXRD) techniques and all the proposed models are based on the occurrence of group III (and/or V) blocks of dimmers occupying sites on the top or at subsurface layer. However, there are still difficulties in determining either the exact number of atoms in each dimmer or the number of dimmers in each block. With the goal of getting a better structure determination of the InSb(100) surface phases a photoelectron diffraction experiment (XPD) was carried out at LNLS where synchrotron and Al-K α radiations have been used. In the present work, the experimental and preliminary results of structure determination for both In Sn(100)c(8x2) and InSb(100)c(4x4) phases will be presented and discussed. (author)

  8. Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

    Directory of Open Access Journals (Sweden)

    Han Li

    2017-12-01

    Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

  9. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

    International Nuclear Information System (INIS)

    Lee, Bong-Sub; Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone; Bishop, Stephen G.

    2014-01-01

    Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge 2 Sb 2 Te 5 and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge 2 Sb 2 Te 5 and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge 2 Sb 2 Te 5 includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated

  10. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

    International Nuclear Information System (INIS)

    Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

    2012-01-01

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2 /Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

  11. Theoretical study on the gas adsorption capacity and selectivity of CPM-200-In/Mg and CPM-200-In/Mg-X (-X = -NH2, -OH, -N, -F).

    Science.gov (United States)

    Liu, Xiao-le; Chen, Guang-Hui; Wang, Xiu-Jun; Li, Peng; Song, Yi-Bing; Li, Rui-Yan

    2017-11-15

    The adsorption capacities of a heterometallic metal-organic framework (CPM-200-In/Mg) to VOCs (HCHO, C 2 H 4 , CH 4 , C 2 H 2 , C 3 H 8 , C 2 H 6 , C 2 H 3 Cl, C 2 H 2 Cl 2 , CH 2 Cl 2 and CHCl 3 ) and some inorganic gas molecules (HCN, SO 2 , NO, CO 2 , CO, H 2 S and NH 3 ), as well as its selectivity in ternary mixture systems of natural gas and post-combustion flue gas are theoretically explored at the grand canonical Monte Carlo (GCMC) and density functional theory (DFT) levels. It is shown that CPM-200-In/Mg is suitable for the adsorption of VOCs, particularly for HCHO (up to 0.39 g g -1 at 298 K and 1 bar), and the adsorption capacities of some inorganic gas molecules such as SO 2 , H 2 S and CO 2 match well with the sequence of their polarizability (SO 2 > H 2 S > CO 2 ). The large adsorption capacities of HCN and HCHO in the framework result from the strong interaction between adsorbates and metal centers, based on analyzing the radial distribution functions (RDF). Comparing C 2 H 4 and CH 4 molecules interacting with CPM-200-In/Mg by VDW interaction, we speculate that the high adsorption capacities of their chlorine derivatives in the framework could be due to the existence of halogen bonding or strong electrostatic and VDW interactions. It is found that the basic groups, including -NH 2 , -N and -OH, can effectively improve both the adsorption capacities and selectivity of CPM-200-In/Mg for harmful gases. Note that the adsorption capacity of CPM-200-In/Mg-NH 2 (site 2) (245 cm 3 g -1 ) for CO 2 exceeded that of MOF-74-Mg (228 cm 3 g -1 ) at 273 K and 1 bar and that for HCHO can reach 0.41 g g -1 , which is almost twice that of 438-MOF and nearly 45 times of that in active carbon. Moreover, for natural gas mixtures, the decarburization and desulfurization abilities of CPM-200-In/Mg-NH 2 (site 2) have exceeded those of the MOF-74 series, while for post-combustion flue gas mixtures, the desulfurization ability of CPM-200-In/Mg-NH 2 (site 2) is still

  12. Behavior of GaSb (100) and InSb (100) surfaces in the presence of H{sub 2}O{sub 2} in acidic and basic cleaning solutions

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

    2017-03-31

    Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H{sub 2}O{sub 2}. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H{sub 2}O{sub 2} because gallium and indium are in the thermodynamically stable forms of H{sub 2}GaO{sub 3}{sup −} and InO{sub 2}{sup −}, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H{sub 2}O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb

  13. Investigation of electro-optical properties of InSb under the influence of spin-orbit interaction at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hilal, Muhammad; Rashid, Bahroz; Khan, Shah Haider; Khan, Afzal, E-mail: afzal_khan@upesh.edu.pk

    2016-12-01

    To investigate the electro-optical properties of indium antimonide (InSb) for photo-voltaic applications, we performed first principles calculations using density functional theory (DFT). Our DFT calculations are based on full potential linearized augmented plane wave (FP-LAPW) method implemented by WIEN2K code. These calculations are carried out using generalized gradient approximation (GGA) and Tran Blaha modified Becke Johnson (TB-mBJ) approximation for exchange co-relation potential. All the calculations are performed with and without the addition of spin-orbit interaction (SOI) to GGA and TB-mBJ potentials. Addition of SOI gives the results very close to their experimental values and makes the calculations independent of k-points consideration. All the results are calculated by considering the temperature as high as 300 K. To the best of our knowledge, all the previously published theoretical results were calculated at 0 K and no such results have been reported at 300 K. In this article, we are reporting band structure, density of states (DOS) and the band gap dependent optical properties of InSb. The calculated direct band gap is 0.17 eV, refractive index is 3.79 and extinction coefficient as 3.22. - Highlights: • Room temperature calculations of electro-optical properties of InSb. • Effect of SOI on the band structure and critical points. • The addition of SOI made the calculation k-points independent. • Optical properties were calculated without broadening or applying scissor potential.

  14. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

    OpenAIRE

    Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H; Kühne, Thomas D; Bernasconi, Marco

    2016-01-01

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the u...

  15. Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

    International Nuclear Information System (INIS)

    Akkal, B.; Benamara, Z.; Bouiadjra, N. Bachir; Tizi, S.; Gruzza, B.

    2006-01-01

    The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V G ), the capacitance-voltage C(V G ) measurements were plotted and analysed. The saturation current I s , the serial resistance R s and the mean ideality factor n are, respectively, equal to 2.03 x 10 -5 A, 85 Ω, 1.7 under dark and to 3.97 x 10 -5 A, 67 Ω, 1.59 under illumination. The analysis of I(V G ) and C(V G ) characteristics allows us to determine the mean interfacial state density N ss and the transmission coefficient θ n equal, respectively, to 4.33 x 10 12 eV -1 cm -2 , 4.08 x 10 -3 under dark and 3.79 x 10 12 eV -1 cm -2 and 5.65 x 10 -3 under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C -2 (V G ) characteristic

  16. Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

    Energy Technology Data Exchange (ETDEWEB)

    Mironov, O.A.; Myronov, M.; Durov, S.; Drachenko, O.; Leotin, J

    2004-04-30

    Microminiature Hall probes with sensitive area down to 33x115 {mu}m and based on n-InSb/i-GaAs optimized Sn-doped MBE-grown heterostructures are reported. The 'metallurgical' thicknesses of the n-InSb epilayers lie in the range d{sup m}=1.1-10.5 {mu}m giving room-temperature mobilities of (9-15)x10{sup 3} cm{sup 2}/Vs with carrier densities of (0.96-2.56)x10{sup 18} cm{sup -3}. Characterization of the devices was performed by magnetotransport measurements in quasi-static and pulsed magnetic fields. In the temperature range 1.1-300 K and in magnetic fields up to 12 T (static) and up to 52 T (pulsed, {tau}=120 mS), transport measurements yield remarkable linearity of the Hall voltage up to 52 T and sensitivity, as well as demonstrating the high-temperature stability of the Hall voltage, the offset voltage and the device resistivity. No significant effect of the high current up to 150 mA on either the sensitivity or the resistivity is observed.

  17. Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

    Science.gov (United States)

    Dyksik, Mateusz; Motyka, Marcin; Kurka, Marcin; Ryczko, Krzysztof; Misiewicz, Jan; Schade, Anne; Kamp, Martin; Höfling, Sven; Sęk, Grzegorz

    2017-11-01

    Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

  18. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  19. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

    Science.gov (United States)

    Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H.; Kühne, Thomas D.; Bernasconi, Marco

    2016-05-01

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

  20. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

    International Nuclear Information System (INIS)

    Gabardi, Silvia; Caravati, Sebastiano; Bernasconi, Marco; Los, Jan H.; Kühne, Thomas D.

    2016-01-01

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In 3 SbTe 2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge 2 Sb 2 Te 5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

  1. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    International Nuclear Information System (INIS)

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

    2009-01-01

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  2. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    Energy Technology Data Exchange (ETDEWEB)

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

    2009-11-15

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  3. Quantum spin Hall effect and topological phase transition in InN x Bi y Sb1-x-y /InSb quantum wells

    Science.gov (United States)

    Song, Zhigang; Bose, Sumanta; Fan, Weijun; Zhang, Dao Hua; Zhang, Yan Yang; Shen Li, Shu

    2017-07-01

    Quantum spin Hall (QSH) effect, a fundamentally new quantum state of matter and topological phase transitions are characteristics of a kind of electronic material, popularly referred to as topological insulators (TIs). TIs are similar to ordinary insulator in terms of their bulk bandgap, but have gapless conducting edge-states that are topologically protected. These edge-states are facilitated by the time-reversal symmetry and they are robust against nonmagnetic impurity scattering. Recently, the quest for new materials exhibiting non-trivial topological state of matter has been of great research interest, as TIs find applications in new electronics and spintronics and quantum-computing devices. Here, we propose and demonstrate as a proof-of-concept that QSH effect and topological phase transitions can be realized in {{InN}}x{{Bi}}y{{Sb}}1-x-y/InSb semiconductor quantum wells (QWs). The simultaneous incorporation of nitrogen and bismuth in InSb is instrumental in lowering the bandgap, while inducing opposite kinds of strain to attain a near-lattice-matching conducive for lattice growth. Phase diagram for bandgap shows that as we increase the QW thickness, at a critical thickness, the electronic bandstructure switches from a normal to an inverted type. We confirm that such transition are topological phase transitions between a traditional insulator and a TI exhibiting QSH effect—by demonstrating the topologically protected edge-states using the bandstructure, edge-localized distribution of the wavefunctions and edge-state spin-momentum locking phenomenon, presence of non-zero conductance in spite of the Fermi energy lying in the bandgap window, crossover points of Landau levels in the zero-mode indicating topological band inversion in the absence of any magnetic field and presence of large Rashba spin-splitting, which is essential for spin-manipulation in TIs.

  4. Size Determination of Y2O3 Crystallites in MgO Composite Using Mie Scattering

    Science.gov (United States)

    2017-11-07

    embedded in a magnesium oxide (MgO) polycrystalline matrix. The calculation takes into account the volume fraction of Y2O3 in MgO, the average...release; distribution is unlimited. v Acknowledgments We gratefully acknowledge the financial support from the US Army Research Laboratory (ARL... principle , and the percent of theoretical density (TD) was calculated based on a TD of the mixture being 3.616 g/cm3. Table 1 Sample preparation

  5. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    NARCIS (Netherlands)

    van Huis, M.A.; van Veen, A.; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; de Hosson, J.T.M.

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 x 10(16) Cd ions cm(-2) and 210 keV, 1 x 10(16) Se ions cm(-2) in single crystals of MgO(001) and subsequent thermal annealing at a temperature of 1300 K, The structural properties and the orientation relationship between

  6. Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Ivanov, Ilia N. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia, E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2015-12-14

    Controlling ferroelectric switching in Mg doped lithium niobate (Mg:LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg:LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the “up” to the “down” state increases with increasing thickness in pure Mg:LN, whereas the voltage required for stable back switching to the original “up” state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg:LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg:LN layer above due to the presence of uncompensated polarization charge at the PE-Mg:LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg:LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.

  7. Energy gap in MgB2 superconductor: Andreev reflection studies

    International Nuclear Information System (INIS)

    Aswal, D.K.

    2003-01-01

    To investigate the nature of energy gap in MgB 2 superconductor, we have performed Andreev-reflection studies on MgB 2 / Ag planar junctions. The differential resistance (dV/dI) versus voltage (V) characteristics were recorded as a function of temperature, magnetic field and junction-type. The dV/dI vs V characteristic recorded at low temperature and zero-field for a clean MgB 2 / Ag planar junction exhibited several interesting features, such as, zero bias anomaly, a distinct double-minima, sharp resonance peaks near the energy gap etc. The data, however, could not be explained using Blonder-Tinkham-Klapwijk theory of isotropic superconductor, which indicated that energy gap in MgB 2 is not consistent with the weak-coupling BCS theory. This is further supported by unusual temperature and magnetic field dependence of the tunneling characteristics. The results indicate several possibilities for the energy gap in MgB 2 , such as, an anisotropic energy gap, two-energy or an unconventional gap scenario. (author)

  8. F + centre generation in MgO crystals at high density of excitation by accelerated electrons of subthreshold energy

    Science.gov (United States)

    Annenkov, Y. M.; Surzhikov, A. P.; Surzhikov, V. P.; Pogrebnjak, A. D.

    1981-07-01

    Optical absorption spectra and the angular distribution of annihilated positrons in MgO crystals irradiated by subtreshold superdense electron pulses are measured. The experimental results obtained show the effective contribution of the creation mechanism of non-impact radiation defects in MgO crystals at the highest electron irradiation densities.

  9. Lubrication of dislocation glide in MgO by hydrous defects

    Science.gov (United States)

    Skelton, Richard; Walker, Andrew M.

    2018-02-01

    Water-related defects, principally in the form of protonated cation vacancies, are potentially able to weaken minerals under high-stress or low-temperature conditions by reducing the Peierls stress required to initiate dislocation glide. In this study, we use the Peierls-Nabarro (PN) model to determine the effect of protonated Mg vacancies on the 1/2{110} and 1/2{100} slip systems in MgO. This PN model is parameterized using generalized stacking fault energies calculated using plane-wave density functional theory, with and without protonated Mg vacancies present at the glide plane. It found that these defects increase dislocation core widths and reduce the Peierls stress over the entire pressure range 0-125 GPa. Furthermore, 1/2{110} slip is found to be more sensitive to the presence of protonated vacancies which increases in the pressure at which {100} becomes the easy glide plane for 1/2 screw dislocations. These results demonstrate, for a simple mineral system, that water-related defects can alter the deformation behavior of minerals in the glide-creep regime by reducing the stress required to move dislocations by glide. (Mg, Fe)O is the most anisotropic mineral in the Earth's lower mantle, so the differential sensitivity of the major slip systems in MgO to hydrous defects has potential implications for the interpretation of the seismic anisotropy in this region.

  10. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Song, Keun Man

    2014-01-01

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2 Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers

  11. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Department of Optometry, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Song, Keun Man, E-mail: skmmec@gmail.com [Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770 (Korea, Republic of)

    2014-01-15

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp{sub 2}Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers.

  12. Ab initio molecular dynamics simulations of low energy recoil events in MgO

    International Nuclear Information System (INIS)

    Petersen, B. A.; Liu, B.; Weber, W. J.; Oak Ridge National Laboratory; Zhang, Y.; Oak Ridge National Laboratory

    2017-01-01

    In this paper, low-energy recoil events in MgO are studied using ab initio molecular dynamics simulations to reveal the dynamic displacement processes and final defect configurations. Threshold displacement energies, E_d, are obtained for Mg and O along three low-index crystallographic directions, [100], [110], and [111]. The minimum values for E_d are found along the [110] direction consisting of the same element, either Mg or O atoms. Minimum threshold values of 29.5 eV for Mg and 25.5 eV for O, respectively, are suggested from the calculations. For other directions, the threshold energies are considerably higher, 65.5 and 150.0 eV for O along [111] and [100], and 122.5 eV for Mg along both [111] and [100] directions, respectively. These results show that the recoil events in MgO are partial-charge transfer assisted processes where the charge transfer plays an important role. Finally, there is a similar trend found in other oxide materials, where the threshold displacement energy correlates linearly with the peak partial-charge transfer, suggesting this behavior might be universal in ceramic oxides.

  13. Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Bachiller-Perea, Diana, E-mail: dianabachillerperea@gmail.com [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, 28049, Madrid (Spain); Dpto. de Física Aplicada, Universidad Autónoma de Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Debelle, Aurélien, E-mail: aurelien.debelle@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Thomé, Lionel [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Behar, Moni [Instituto de Física, Universidade Federal do Rio Grande do Sul, C.P. 15051, 91501-970, Porto Alegre, RS (Brazil)

    2016-09-15

    The damage accumulation process in MgO single crystals under medium-energy heavy ion irradiation (1.2 MeV Au) at fluences up to 4 × 10{sup 14} cm{sup −2} has been studied at three different temperatures: 573, 773, and 1073 K. Disorder depth profiles have been determined through the use of the Rutherford backscattering spectrometry in channeling configuration (RBS/C). The analysis of the RBS/C data reveals two steps in the MgO damage process, irrespective of the temperature. However, we find that for increasing irradiation temperature, the damage level decreases and the fluence at which the second step takes place increases. A shift of the damage peak at increasing fluence is observed for the three temperatures, although the position of the peak depends on the temperature. These results can be explained by an enhanced defect mobility which facilitates defect migration and may favor defect annealing. X-ray diffraction reciprocal space maps confirm the results obtained with the RBS/C technique. - Highlights: • High-temperature MeV-ion irradiated MgO exhibits a two-step damage process. • The occurrence of the second step is delayed with increasing temperature. • The damage level decreases with increasing temperature. • A shift of the damage peak is observed with increasing fluence. • A high defect mobility at high temperatures in MgO is clearly evidenced.

  14. Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

    Science.gov (United States)

    Islam, R.; Uddin, M. M.; Hossain, M. Mofazzal; Matin, M. A.

    The design of a 1μm gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrödinger-Poisson (QCSP) and two-dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42m2V-1s-1 at Vg=0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of ˜4.85mS/μm and a drain current density of more than 3.34mA/μm. A short-circuit current-gain cut-off frequency (fT) of 374GHz and a maximum oscillation frequency (fmax) of 645GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

  15. Influence of the exchange and correlation functional on the structure of amorphous InSb and In{sub 3}SbTe{sub 2} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Gabardi, Silvia; Caravati, Sebastiano; Bernasconi, Marco, E-mail: marco.bernasconi@mater.unimib.it [Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano (Italy); Los, Jan H.; Kühne, Thomas D. [Institute of Physical Chemistry and Center for Computational Sciences, Johannes Gutenberg University Mainz, Staudinger Weg 7, D-55128 Mainz (Germany)

    2016-05-28

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In{sub 3}SbTe{sub 2} compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge{sub 2}Sb{sub 2}Te{sub 5} phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

  16. The nitrogen doping effect on the properties of Ge-In-Sb-Te phase-change recording media investigated by blue-light laser

    International Nuclear Information System (INIS)

    Yeh, T.-T.; Hsieh, T.-E.; Shieh, H.-P.D.

    2005-01-01

    This work investigates the thermal, optical and recrystallization properties as well as the microstructure of nitrogen-doped Ge-In-Sb-Te (GIST) phase-change material when irradiated by blue-light laser. The experimental results showed that nitrogen doping at the condition of N 2 /Ar sputtering gas flow ratio equals to 3% might enhance the recrystallization speed of GIST recording layer up to 1.5 times. However, the disk failed when too much nitrogen (N 2 /Ar ≥ 5.0%) was introduced. The data obtained by differential scanning calorimetry, X-ray diffraction and ellipsometry revealed changes of thermal and optical properties due to the nitrogen doping in GIST. When appropriate amount of nitrogen was added, the activation energy (E a ) of amorphous-crystalline phase transition of GIST decreased and the optical constants of amorphous and crystalline phases (except the k value of amorphous phase) gradually reduced with the increase of wavelength in the range of 600-750 nm. Modulation simulation based on the reflectively of doped GIST layers obtained from static test indicated that appropriate nitrogen doping benefited the signal characteristics of optical disks. Transmission electron microscopy observed numerous tiny precipitates uniformly distributed in the doped GIST layers. These were believed to be nitride particles generated by nitrogen doping that might offer the preferential sites for amorphous-crystalline phase transition so that the recrystallization speed was accelerated

  17. The 5s25p2 - (5s25p5d + 5s5p3 + 5s25p6s + 5s25p7s) transitions in Sb II and 5s25p - (5s5p2 + 5s2nl) transitions in Sb III

    International Nuclear Information System (INIS)

    Arcimowicz, B.; Joshi, Y.N.; Kaufman, V.

    1989-01-01

    The spectrum of antimony was photographed in the 575-2300 A region (1A 10 -10 m) using a hollow cathode and a triggered spark source. The analysis of the 5s 2 5p 2 - (5s 2 5p5d + 5s5p 3 + 5s 2 5p6s + 5s 2 5p7s) transitions in Sb II spectrum was revised and interpreted on the basis of multiconfiguration interaction calculations. Accurate wavelength measurements of Sb III lines lead to a revised ground-state 5s 2 5p 2 P interval value of 6574.5 cm -1 . (author). 15 refs., 9 tabs., 1 fig

  18. Influence of iridium doping in MgB2 superconducting wires

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude

    2018-01-01

    MgB2 wires with iridium doping were manufactured using the in-situ technique in a composite Cu-Nb sheath. Reaction was performed at 700°C, 800°C or 900°C for 1h in argon atmosphere. A maximum of about 1.5 at.% Ir replaces Mg in MgB2. The superconducting transition temperature is slightly lowered...... by Ir doping. The formation of IrMg3 and IrMg4 secondary phase particles is evidenced, especially for a nominal stoichiometry with 2.0 at.% Ir doping. The critical current density and accommodation field of the wires are strongly dependent on the Ir content and are generally weakened in the presence...

  19. On the phototransferred thermoluminescence in MgB4O7:Dy

    International Nuclear Information System (INIS)

    Richmond, R.G.

    1987-01-01

    On exposure to ionizing radiations, the normal traps in MgB 4 0 7 :Dy can be emptied by the readout process only or by annealing at suitable temperatures, leaving the deep traps still intact. Subsequently, it is possible to repopulate the dosimetric peak by illuminating with u.v. light. Charge carriers released from the traps during the second readout give rise to a thermoluminescent output proportional to the ionizing radiation exposure and the u.v. radiant energy. This is called phototransferred thermoluminescence (PTTL). The PTTL method can be utilized for the reassessment of the initial γ-ray exposure. This paper presents the measurements of the intrinsic response of the commercially available MgB 4 0 7 :Dy to u.v. radiation, with a demonstration of its use for γ-ray dose re-estimation using the PTTL technique. (author)

  20. Phthalocyanine doping to improve critical current densities in MgB2 tapes

    International Nuclear Information System (INIS)

    Zhang Xianping; Ma Yanwei; Wang Dongliang; Gao Zhaoshun; Wang Lei; Qi Yanpeng; Awaji, Satoshi; Watanabe, Kazuo; Mossang, Eric

    2009-01-01

    Phthalocyanine-doped MgB 2 tapes were prepared by the in situ powder-in-tube method. The relationships between the critical current properties, crystallinity and microstructure were studied as a function of the phthalocyanine doping level. It is found that both H irr and H c2 were improved when MgB 2 samples were doped with phthalocyanine, which are mainly attributed to the effective carbon substitution and enhanced flux pinning strength caused by very fine grain sizes. Furthermore, compared to pure samples, the MgO content remained almost unchanged in all doped tapes, which is very beneficial to having better grain connectivity in MgB 2 . Significantly improved J c was obtained in the phthalocyanine-doped MgB 2 tapes, especially under high magnetic fields.

  1. Two main and a new type rare earth elements in Mg alloys: A review

    Science.gov (United States)

    Kong, Linghang

    2017-09-01

    Magnesium (Mg) alloys stand for the lightest structure engineering materials. Moreover, the strengthening of Mg alloys in ductility, toughness and corrosion predominates their wide applications. With adding rare earth elements in Mg, the mechanical properties will be improved remarkably, especially their plasticity and strength. A brief overview of the addition of rare earth elements for Mg alloys is shown. The basic mechanisms of strengthening Mg alloys with rare earth elements are reviewed, including the solid solution strengthening, grain refinement and long period stacking ordered (LPSO) phase. Furthermore, the available rare earth elements are summarized by type, chemical or physical effects and other unique properties. Finally, some challenge problems that the research is facing and future expectations of ra-re-earth Mg alloys are stated and discussed.

  2. Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

    International Nuclear Information System (INIS)

    Wang, D.D.; Chen, Z.Q.; Li, C.Y.; Li, X.F.; Cao, C.Y.; Tang, Z.

    2012-01-01

    High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

  3. Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, D.D. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Chen, Z.Q., E-mail: chenzq@whu.edu.cn [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Li, C.Y.; Li, X.F. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Cao, C.Y.; Tang, Z. [Department of Electronic and Engineering, East China Normal University, Shanghai 200241 (China)

    2012-07-15

    High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 Degree-Sign C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 Degree-Sign C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 Degree-Sign C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 Degree-Sign C. However, after 1400 Degree-Sign C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

  4. The precipitation process in Mg-Ca-(Zn) alloys investigated by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ortega, Yanicet [Departamento de Fisica, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain)], E-mail: yanicet@fis.ucm.es; Monge, Miguel Angel; Pareja, Ramiro [Departamento de Fisica, Universidad Carlos III de Madrid, 28911 Leganes (Spain)

    2008-09-08

    Coincidence doppler broadening (CDB) spectroscopy has been applied to study the precipitation process induced by aging in Mg-1.0 wt.% Ca and Mg-1.0 wt.% Ca-1.0 wt.% Zn alloys. In addition positron lifetime experiments and microhardness measurements have been performed. A peak centered at {approx}11.5 x 10{sup -3}m{sub 0}c is found in the CDB ratio spectra of the alloys aged at 473 K. It is attributed to annihilations with the core electrons of Ca. The results indicate the formation of a particle dispersion that hardens the alloys. This dispersion is correlated with the appearance of the peak attributed to Ca atoms. Zn atoms in the Mg matrix inhibit the formation of quenched-in vacancies bound to Ca atoms in the aged ternary alloy producing the dispersion refinement.

  5. The precipitation process in Mg-Ca-(Zn) alloys investigated by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Ortega, Yanicet; Monge, Miguel Angel; Pareja, Ramiro

    2008-01-01

    Coincidence doppler broadening (CDB) spectroscopy has been applied to study the precipitation process induced by aging in Mg-1.0 wt.% Ca and Mg-1.0 wt.% Ca-1.0 wt.% Zn alloys. In addition positron lifetime experiments and microhardness measurements have been performed. A peak centered at ∼11.5 x 10 -3 m 0 c is found in the CDB ratio spectra of the alloys aged at 473 K. It is attributed to annihilations with the core electrons of Ca. The results indicate the formation of a particle dispersion that hardens the alloys. This dispersion is correlated with the appearance of the peak attributed to Ca atoms. Zn atoms in the Mg matrix inhibit the formation of quenched-in vacancies bound to Ca atoms in the aged ternary alloy producing the dispersion refinement

  6. Defect induced ferromagnetism in MgO nanoparticles studied by optical and positron annihilation spectroscopy

    Science.gov (United States)

    Kumar, Nitesh; Sanyal, D.; Sundaresan, A.

    2009-08-01

    Positron annihilation spectroscopy has been used to explore the nature of defects and to estimate the defect concentrations in ferromagnetic MgO nanoparticles. Our experimental results show that Mg vacancies or Mg vacancy concentration are present approximately at the concentration of 3.4 × 10 16 cm -3 in the nano-crystalline MgO which is twice the value that obtained for bulk sample. This is in correlation with the decrease of the intensity of blue luminescence and the saturation magnetic moment with increasing particle size. These results clearly demonstrate that the origin of magnetic moment and thus the ferromagnetism in MgO nanoparticles is due to Mg related vacancies at the surface of the particles.

  7. Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

    Science.gov (United States)

    Wang, D. D.; Chen, Z. Q.; Li, C. Y.; Li, X. F.; Cao, C. Y.; Tang, Z.

    2012-07-01

    High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

  8. Small Fermi energy, strong electron-phonon effects and anharmonicity in MgB2

    International Nuclear Information System (INIS)

    Cappelluti, E.; Pietronero, L.

    2007-01-01

    The investigation of the electron-phonon properties in MgB 2 has attracted a huge interest after the discovery of superconductivity with T c 39 K in this compound. Although superconductivity is often described in terms of the conventional Eliashberg theory, properly generalized in the multiband/multigap scenario, important features distinguish MgB 2 from other conventional strong-coupling superconductors. Most important it is the fact that a large part of the total electron-phonon strength seems to be concentrated here in only one phonon mode, the boron-boron E 2g stretching mode. Another interesting property is the small Fermi energy of the σ bands, which are strongly coupled with the E 2g mode. In this contribution, we discuss how the coexistence of both these features give rise to an unconventional phenomenology of the electron-phonon properties

  9. Computer simulations of nanoindentation in Mg-Cu and Cu-Zr metallic glasses

    DEFF Research Database (Denmark)

    Paduraru, Anca; Andersen, Ulrik Grønbjerg; Thyssen, Anders

    2010-01-01

    The formation of shear bands during plastic deformation of Cu0.50Zr0.50 and Mg0.85Cu0.15 metallic glasses is studied using atomic-scale computer simulations. The atomic interactions are described using realistic many-body potentials within the effective medium theory, and are compared with similar...... simulations using a Lennard-Jones description of the material. The metallic glasses are deformed both in simple shear and in a simulated nanoindentation experiment. Plastic shear localizes into shear bands with a width of approximately 5 nm in CuZr and 8 nm in MgCu. In simple shear, the shear band formation...... is very clear, whereas only incipient shear bands are seen in nanoindentation. The shear band formation during nanoindentation is sensitive to the indentation velocity, indenter radius and the cooling rate during the formation of the metallic glass. For comparison, a similar nanoindentation simulation...

  10. Direct observation of superconducting gaps in MgB 2 by angle-resolved photoemission spectroscopy

    Science.gov (United States)

    Souma, S.; Machida, Y.; Sato, T.; Takahashi, T.; Matsui, H.; Wang, S.-C.; Ding, H.; Kaminski, A.; Campuzano, J. C.; Sasaki, S.; Kadowaki, K.

    2004-08-01

    High-resolution angle-resolved photoemission spectroscopy has been carried out to clarify the anomalous superconductivity of MgB 2. We observed three bands crossing the Fermi level, which are ascribed to B2p-σ, π and surface bands. We have succeeded for the first time in directly observing the superconducting gaps of these bands separately. We have found that the superconducting-gap sizes of σ and surface bands are 6.5 ± 0.5 and 6.0 ± 0.5 meV, respectively, while that of the π band is much smaller (1.5 ± 0.5 meV). The present experimental result unambiguously demonstrates the validity of the two-band superconductivity in MgB 2.

  11. Direct observation of superconducting gaps in MgB2 by angle-resolved photoemission spectroscopy

    International Nuclear Information System (INIS)

    Souma, S.; Machida, Y.; Sato, T.; Takahashi, T.; Matsui, H.; Wang, S.-C.; Ding, H.; Kaminski, A.; Campuzano, J.C.; Sasaki, S.; Kadowaki, K.

    2004-01-01

    High-resolution angle-resolved photoemission spectroscopy has been carried out to clarify the anomalous superconductivity of MgB 2 . We observed three bands crossing the Fermi level, which are ascribed to B2p-σ, π and surface bands. We have succeeded for the first time in directly observing the superconducting gaps of these bands separately. We have found that the superconducting-gap sizes of σ and surface bands are 6.5 ± 0.5 and 6.0 ± 0.5 meV, respectively, while that of the π band is much smaller (1.5 ± 0.5 meV). The present experimental result unambiguously demonstrates the validity of the two-band superconductivity in MgB 2

  12. Luminescence of rare-earth ions in Mg[sub 2]SiO[sub 4

    Energy Technology Data Exchange (ETDEWEB)

    Van der Voort, D; Maat-Gersdorf, I de; Blasse, G [Rijksuniversiteit Utrecht (Netherlands)

    1992-01-01

    The luminescence of the rare-earth ions Eu[sup 3+], Tb[sup 3+] and Ce[sup 3+] in Mg[sub 2]SiO[sub 4] is reported. The Tb[sup 3+] ion shows a change in emission colour from blue to green depending on the charge compensator. This is ascribed to a difference in coupling of the Tb[sup 3+] ion to the vibrational lattice modes. The Eu[sup 3+] ion has an average quantum efficiency under charge-transfer excitation of 60% at 4.2 and 20% at 300 K. The Ce[sup 3+] emission is situated in the blue and shows a Stokes shift of 3 500 cm[sup -1]. The relaxation of these ions in the excited state is discussed in terms of their positive effective charge and the stiffness of their surroundings.

  13. Excitation of different chromium centres by synchrotron radiation in MgO:Cr single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Shablonin, E. [Institute of Physics, University of Tartu, Ravila Str. 14c, 50411 Tartu (Estonia); Popov, A.I., E-mail: popov@latnet.lv [Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga LV-1063 (Latvia); Lushchik, A., E-mail: aleksandr.lushchik@ut.ee [Institute of Physics, University of Tartu, Ravila Str. 14c, 50411 Tartu (Estonia); Kotlov, A. [Photon Science at DESY, Notkestrasse 85, 22607 Hamburg (Germany); Dolgov, S. [Institute of Physics, University of Tartu, Ravila Str. 14c, 50411 Tartu (Estonia)

    2015-11-15

    The excitation spectra for the emissions of chromium-containing centres have been measured at 10 K using synchrotron radiation of 4–32 eV in MgO single crystals with different content of Cr{sup 3+} (5–850 ppm) and Ca{sup 2+} impurity ions. Both virgin crystals and the samples preliminarily irradiated with x-rays at 295 K have been studied. The role of complex chromium centres containing two Cr{sup 3+} and a cation vacancy (sometimes nearby a Ca{sup 2+} ion) on the luminescence processes and the transformation/creation of structural defects has been analysed. Such anharmonic complex centres could serve as the seeds for the creation of 3D defects that facilitate the cracking and brittle destruction of MgO crystals under their irradiation with ∼GeV heavy ions providing extremely high excitation density within cylindrical ion tracks.

  14. Subsurface synthesis and characterization of Ag nanoparticles embedded in MgO

    Science.gov (United States)

    Vilayurganapathy, S.; Devaraj, A.; Colby, R.; Pandey, A.; Varga, T.; Shutthanandan, V.; Manandhar, S.; El-Khoury, P. Z.; Kayani, Asghar; Hess, W. P.; Thevuthasan, S.

    2013-03-01

    Metal nanoparticles exhibit a localized surface plasmon resonance (LSPR) which is very sensitive to the size and shape of the nanoparticle and the surrounding dielectric medium. The coupling between the electromagnetic radiation and the localized surface plasmon in metallic nanoparticles results in a sizable enhancement of the incident fields, making them possible candidates for plasmonic applications. In particular, partially exposed metallic nanoparticles distributed in a dielectric matrix can provide prime locations for LSPR spectroscopy and sensing. We report the synthesis and characterization of a plasmonic substrate consisting of Ag nanoparticles partially buried in MgO. Ag nanoparticles of different shapes and size distributions were synthesized below the surface of MgO by implanting 200 keV Ag+ ions followed by annealing at 1000 °C for 10 and 30 h. A detailed optical and structural characterization was carried out to understand the evolution of the Ag nanoparticle and size distribution inside the MgO matrix. Micro x-ray diffraction (Micro-XRD) was employed to investigate the structural properties and estimate the crystallite size. The nanoparticles evolved from a spherical to a faceted morphology with annealing time, assuming an octahedral shape truncated at the (001) planes, as visualized from aberration-corrected transmission electron microscopy (TEM) images. The nanoparticles embedded in MgO were shown to be pure metallic Ag using atom probe tomography (APT). The nanoparticles were partially exposed to the surface by employing plasma etch techniques to remove the overlaying MgO. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were employed to study the surface morphology and obtain a height distribution for the partially exposed nanoparticles.

  15. Subsurface Synthesis and Characterization of Ag Nanoparticles Embedded in MgO

    Energy Technology Data Exchange (ETDEWEB)

    Vilayur Ganapathy, Subramanian; Devaraj, Arun; Colby, Robert J.; Pandey, Archana; Varga, Tamas; Shutthanandan, V.; Manandhar, Sandeep; El-Khoury, Patrick Z.; Kayani, Asghar N.; Hess, Wayne P.; Thevuthasan, Suntharampillai

    2013-03-08

    Metal nanoparticles exhibit localized surface plasmon resonance (LSPR) which is very sensitive to the size and shape of the nanoparticle and the dielectric medium surrounding it. LSPR causes field enhancement near the surface of the nanoparticle making them interesting candidates for plasmonic applications. In particular, partially exposed metallic nanoparticles distributed in a dielectric matrix form hotspots which are prime locations for LSPR spectroscopy and sensing. This study involves synthesizing partially buried Ag nanoparticles in MgO and investigating the characteristics of this material system. Ag nanoparticles of different shapes and size distributions were synthesized below the surface of MgO by implanting 200 keV Ag+ ions followed by annealing at 10000C for 10 and 30 hours. A detailed optical and structural characterization was carried out to understand the evolution of Ag nanoparticle microstructure and size distribution inside the MgO matrix. Micro x-ray diffraction (MicroXRD) was employed to investigate the structural properties and estimate the crystallite size. The nanoparticles evolved from a spherical to faceted morphology with annealing time, assuming an octahedral shape truncated at the (001) planes as seen from aberration corrected transmission electron microscopy (TEM) images. The nanoparticles embedded in MgO were shown to be pure metallic Ag using atom probe tomography (APT). The nanoparticles were partially exposed to the surface employing plasma etch techniques to remove the overlaying MgO. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were employed to study the surface morphology and obtain a height distribution for the partially exposed nanoparticles.

  16. Investigation of blue luminescence in Mg doped AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

    2015-02-05

    Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

  17. Subsurface synthesis and characterization of Ag nanoparticles embedded in MgO

    International Nuclear Information System (INIS)

    Vilayurganapathy, S; Devaraj, A; Colby, R; Pandey, A; Varga, T; Shutthanandan, V; Manandhar, S; Thevuthasan, S; El-Khoury, P Z; Hess, W P; Kayani, Asghar

    2013-01-01

    Metal nanoparticles exhibit a localized surface plasmon resonance (LSPR) which is very sensitive to the size and shape of the nanoparticle and the surrounding dielectric medium. The coupling between the electromagnetic radiation and the localized surface plasmon in metallic nanoparticles results in a sizable enhancement of the incident fields, making them possible candidates for plasmonic applications. In particular, partially exposed metallic nanoparticles distributed in a dielectric matrix can provide prime locations for LSPR spectroscopy and sensing. We report the synthesis and characterization of a plasmonic substrate consisting of Ag nanoparticles partially buried in MgO. Ag nanoparticles of different shapes and size distributions were synthesized below the surface of MgO by implanting 200 keV Ag + ions followed by annealing at 1000 °C for 10 and 30 h. A detailed optical and structural characterization was carried out to understand the evolution of the Ag nanoparticle and size distribution inside the MgO matrix. Micro x-ray diffraction (Micro-XRD) was employed to investigate the structural properties and estimate the crystallite size. The nanoparticles evolved from a spherical to a faceted morphology with annealing time, assuming an octahedral shape truncated at the (001) planes, as visualized from aberration-corrected transmission electron microscopy (TEM) images. The nanoparticles embedded in MgO were shown to be pure metallic Ag using atom probe tomography (APT). The nanoparticles were partially exposed to the surface by employing plasma etch techniques to remove the overlaying MgO. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were employed to study the surface morphology and obtain a height distribution for the partially exposed nanoparticles. (paper)

  18. Effect of Ga2O3 Nanoparticles Dispersion on Microstructure and Thermoelectric Properties of p-Type BiSbTe Based Alloys

    Directory of Open Access Journals (Sweden)

    Kim E.-B.

    2017-06-01

    Full Text Available In this study, p-type Bi0.5Sb1.5Te3 based nanocomposites with addition of different weight percentages of Ga2O3 nanoparticles are fabricated by mechanical milling and spark plasma sintering. The fracture surfaces of all Bi0.5Sb1.5Te3 nanocomposites exhibited similar grain distribution on the entire fracture surface. The Vickers hardness is improved for the Bi0.5Sb1.5Te3 nanocomposites with 6 wt% added Ga2O3 due to exhibiting fine microstructure, and dispersion strengthening mechanism. The Seebeck coefficient of Bi0.5Sb1.5Te3 nanocomposites are significantly improved owing to the decrease in carrier concentration. The electrical conductivity is decreased rapidly upon the addition of Ga2O3 nanoparticle due to increasing carrier scattering at newly formed interfaces. The peak power factor of 3.24 W/mK2 is achieved for the base Bi0.5Sb1.5Te3 sintered bulk. The Bi0.5Sb1.5Te3 nanocomposites show low power factor than base sample due to low electrical conductivity.

  19. CO_2 capture in Mg oxides doped with Fe and Ni

    International Nuclear Information System (INIS)

    Sanchez S, I. F.

    2016-01-01

    In this work the CO_2 capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe_2O_3 phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO_2 in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO_2 capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO_2 capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO_2 capture. The different stages of mass loss and thermal

  20. Hole transport and photoluminescence in Mg-doped InN

    Energy Technology Data Exchange (ETDEWEB)

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  1. Capturing the H 2 –Metal Interaction in Mg-MOF-74 Using Classical Polarization

    KAUST Repository

    Pham, Tony; Forrest, Katherine A.; McLaughlin, Keith; Eckert, Juergen; Space, Brian

    2014-01-01

    © 2014 American Chemical Society. Grand canonical Monte Carlo (GCMC) simulations of H2 sorption were performed in Mg-MOF-74, a metal-organic framework (MOF) that displays very high H2 sorption affinity. Experimental H2 sorption isotherms and isosteric heats of adsorption (Qst) values were reproduced using a general purpose materials sorption potential that includes many-body polarization interactions. In contrast, using two models that include only charge-quadrupole interactions failed to reproduce such experimental measurements even though they are the type normally employed in such classical force field calculations. Utilizing the present explicit polarizable model in GCMC simulation resulted in a Mg2+-H2 distance of 2.60 Å, which is close to a previously reported value that was obtained using electronic structure methods and comparable to similar experimental measurements. The induced dipole distribution obtained from simulation assisted in the characterization of two previously identified sorption sites in the MOF: the Mg2+ ions and the oxido group of the linkers. The calculated two-dimensional quantum rotational levels for a H2 molecule sorbed onto the Mg2+ ion were in good agreement with experimental inelastic neutron scattering (INS) data. Although the H2-metal interaction in MOFs may be thought of as a quantum mechanical effect, this study demonstrates how the interaction between the sorbate molecules and the open-metal sites in a particular highly sorbing MOF can be captured using classical simulation techniques that involve a polarizable potential.

  2. Theory of structural phase transition in MgTi{sub 2}O{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Talanov, V. M., E-mail: valtalanov@mail.ru [South Russian State Polytechnical University (Russian Federation); Shirokov, V. B. [Russian Academy of Sciences, South Science Centre (Russian Federation); Ivanov, V. V. [South Russian State Polytechnical University (Russian Federation); Talanov, M. V. [South Federal University (Russian Federation)

    2015-01-15

    A theory of phase transition in MgTi{sub 2}O{sub 4} is proposed based on a study of the order-parameter symmetry, thermodynamics, and mechanisms of formation of the atomic and orbital structure of the low-symmetry MgTi{sub 2}O{sub 4} phase. The critical order parameter (which induces a phase transition) is determined. It is shown that the calculated MgTi{sub 2}O{sub 4} tetragonal structure is a result of displacements of magnesium, titanium, and oxygen atoms; ordering of oxygen atoms; and the participation of d{sub xy}, d{sub xz}, and d{sub yz} orbitals. The contribution of noncritical representations to ion displacements is proven to be insignificant. The existence of various metal clusters in the tetragonal phase has been established by calculation in correspondence with experimental data. It is shown (within the Landau theory of phase transitions) that phase states can be changed as a result of both first- and second-order phase transitions: the high-symmetry phase borders two low-symmetry phases by second-order transition lines, while the border between low-symmetry phases is a first-order transition line.

  3. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    International Nuclear Information System (INIS)

    Huis, M.A. van; Veen, A. van; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; Hosson, J.Th.M. de

    2004-01-01

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 x 10 16 Cd ions cm -2 and 210 keV, 1 x 10 16 Se ions cm -2 in single crystals of MgO(0 0 1) and subsequent thermal annealing at a temperature of 1300 K. The structural properties and the orientation relationship between the CdSe and the MgO are investigated using cross-sectional transmission electron microscopy (XTEM). The crystal structure of the nanoclusters depends on their size. The smallest nanoclusters with a size below 5 nm have the cubic rocksalt crystal structure. The larger nanoclusters have a different (most likely the cubic sphalerite) crystal structure. The defect evolution in the sample after ion implantation and during thermal annealing is investigated using Doppler broadening positron beam analysis (PBA). The defect evolution in samples co-implanted with Cd and Se is compared to the defect evolution in samples implanted with only Cd or only Se ions

  4. Positron annihilation study of formation of Mg vacancy in MgO

    International Nuclear Information System (INIS)

    Mizuno, M.; Araki, H.; Shirai, Y.; Inoue, Y.; Sugita, K.; Mizoguchi, T.; Tanaka, I.; Adachi, H.

    2004-01-01

    We have investigated the formation of Mg vacancy induced by ultra-dilute trivalent impurities in MgO by a combination of positron annihilation measurement and theoretical calculations of positron lifetimes. The undoped MgO yields the shortest positron lifetime of 130 ps that is shorter than that of 166 ps previously reported using a single crystal sample. The positron lifetime of the doped samples increases with the increase of the Al or Ga dopant concentration and is saturated at around 170 ps. This result indicates that the previously reported value of 166 ps is ascribed to not the bulk but the vacancy state induced by impurities. The experimental bulk lifetime of 130 ps, which is obtained by employing trapping model, is well reproduced by the theoretical calculation using the semiconductor model. The calculated defect lifetime is about 20 ps longer than the experimental value. This may be due to the lattice relaxation around Mg vacancy associated with the trapping of positrons. (orig.)

  5. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.

    Science.gov (United States)

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L; Zhang, Qianfan; Zhao, Weisheng

    2015-12-11

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

  6. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    Energy Technology Data Exchange (ETDEWEB)

    Huis, M.A. van E-mail: vanhuis@iri.tudelft.nl; Veen, A. van; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; Hosson, J.Th.M. de

    2004-06-01

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 x 10{sup 16} Cd ions cm{sup -2} and 210 keV, 1 x 10{sup 16} Se ions cm{sup -2} in single crystals of MgO(0 0 1) and subsequent thermal annealing at a temperature of 1300 K. The structural properties and the orientation relationship between the CdSe and the MgO are investigated using cross-sectional transmission electron microscopy (XTEM). The crystal structure of the nanoclusters depends on their size. The smallest nanoclusters with a size below 5 nm have the cubic rocksalt crystal structure. The larger nanoclusters have a different (most likely the cubic sphalerite) crystal structure. The defect evolution in the sample after ion implantation and during thermal annealing is investigated using Doppler broadening positron beam analysis (PBA). The defect evolution in samples co-implanted with Cd and Se is compared to the defect evolution in samples implanted with only Cd or only Se ions.

  7. Positron annihilation study of formation of Mg vacancy in MgO

    Energy Technology Data Exchange (ETDEWEB)

    Mizuno, M.; Araki, H.; Shirai, Y. [Science and Technology Center for Atoms, Molecules and Ions Control, Osaka Univ., Osaka (Japan); Inoue, Y.; Sugita, K. [Dept. of Materials Science and Engineering, Osaka Univ., Osaka (Japan); Mizoguchi, T.; Tanaka, I.; Adachi, H. [Dept. of Materials Science and Engineering, Kyoto Univ., Kyoto (Japan)

    2004-07-01

    We have investigated the formation of Mg vacancy induced by ultra-dilute trivalent impurities in MgO by a combination of positron annihilation measurement and theoretical calculations of positron lifetimes. The undoped MgO yields the shortest positron lifetime of 130 ps that is shorter than that of 166 ps previously reported using a single crystal sample. The positron lifetime of the doped samples increases with the increase of the Al or Ga dopant concentration and is saturated at around 170 ps. This result indicates that the previously reported value of 166 ps is ascribed to not the bulk but the vacancy state induced by impurities. The experimental bulk lifetime of 130 ps, which is obtained by employing trapping model, is well reproduced by the theoretical calculation using the semiconductor model. The calculated defect lifetime is about 20 ps longer than the experimental value. This may be due to the lattice relaxation around Mg vacancy associated with the trapping of positrons. (orig.)

  8. Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

    Science.gov (United States)

    van Huis, M. A.; van Veen, A.; Schut, H.; Eijt, S. W. H.; Kooi, B. J.; De Hosson, J. Th. M.

    2004-06-01

    CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 × 10 16 Cd ions cm -2 and 210 keV, 1 × 10 16 Se ions cm -2 in single crystals of MgO(0 0 1) and subsequent thermal annealing at a temperature of 1300 K. The structural properties and the orientation relationship between the CdSe and the MgO are investigated using cross-sectional transmission electron microscopy (XTEM). The crystal structure of the nanoclusters depends on their size. The smallest nanoclusters with a size below 5 nm have the cubic rocksalt crystal structure. The larger nanoclusters have a different (most likely the cubic sphalerite) crystal structure. The defect evolution in the sample after ion implantation and during thermal annealing is investigated using Doppler broadening positron beam analysis (PBA). The defect evolution in samples co-implanted with Cd and Se is compared to the defect evolution in samples implanted with only Cd or only Se ions.

  9. XMCD study of CoPt nanoparticles embedded in MgO and amorphous carbon matrices

    International Nuclear Information System (INIS)

    Tournus, F.; Blanc, N.; Tamion, A.; Ohresser, P.; Perez, A.; Dupuis, V.

    2008-01-01

    We report the synthesis and characterization of CoPt nanoparticles, using X-ray magnetic circular dichroism (XMCD) at the Co L 2,3 edges. Clusters are produced in ultra-high vacuum conditions, following a physical route, and embedded in non-metallic matrices: MgO and amorphous carbon (a-C). In MgO, Co atoms are partially oxidized, which goes with a μ L /μ S enhancement. On the contrary, a-C appears as a very suitable matrix. In particular, annealing of CoPt cluster embedded in a-C is able to promote L 1 0 chemical order, without alteration of the sample. This transformation, which has been directly evidenced by transmission electron microscopy observations, is accompanied by a striking augmentation of μ S , μ L and the μ L /μ S ratio of Co. The presence of Pt leads to an enhanced Co magnetic moment, as compared to Co bulk, even for the chemically disordered alloy. Moreover, the high value of 1.91μ B /at. measured for μ S is unusual for Co and must be a signature of chemical order in CoPt alloy nanoparticles

  10. Capturing the H 2 –Metal Interaction in Mg-MOF-74 Using Classical Polarization

    KAUST Repository

    Pham, Tony

    2014-10-02

    © 2014 American Chemical Society. Grand canonical Monte Carlo (GCMC) simulations of H2 sorption were performed in Mg-MOF-74, a metal-organic framework (MOF) that displays very high H2 sorption affinity. Experimental H2 sorption isotherms and isosteric heats of adsorption (Qst) values were reproduced using a general purpose materials sorption potential that includes many-body polarization interactions. In contrast, using two models that include only charge-quadrupole interactions failed to reproduce such experimental measurements even though they are the type normally employed in such classical force field calculations. Utilizing the present explicit polarizable model in GCMC simulation resulted in a Mg2+-H2 distance of 2.60 Å, which is close to a previously reported value that was obtained using electronic structure methods and comparable to similar experimental measurements. The induced dipole distribution obtained from simulation assisted in the characterization of two previously identified sorption sites in the MOF: the Mg2+ ions and the oxido group of the linkers. The calculated two-dimensional quantum rotational levels for a H2 molecule sorbed onto the Mg2+ ion were in good agreement with experimental inelastic neutron scattering (INS) data. Although the H2-metal interaction in MOFs may be thought of as a quantum mechanical effect, this study demonstrates how the interaction between the sorbate molecules and the open-metal sites in a particular highly sorbing MOF can be captured using classical simulation techniques that involve a polarizable potential.

  11. Effects in Mg-Zn-based alloys strengthened by quasicrystalline phase

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Lukáč, F; Melikhova, O; Hruška, P; Procházka, I; Vlach, M; Stulíková, I; Smola, B; Jäger, A

    2016-01-01

    Magnesium Mg-based alloys are promising lightweight structural materials for automotive, aerospace and biomedical applications. Recently Mg-Zn-Y system attracted a great attention due to a stable icosahedral phase (I-phase) with quasicrystalline structure which is formed in these alloys. Positron lifetime spectroscopy and in situ synchrotron X-ray diffraction were used to study thermal stability of I-phase and precipitation effects in Mg-Zn-Y and Mg- Zn-Al alloys. All alloys containing quasicrystalline I-phase exhibit misfit defects characterized by positron lifetime of ∼ 300 ps. These defects are associated with the interfaces between I- phase particles and Mg matrix. The quasicrystalline I-phase particles were found to be stable up to temperatures as high as ∼ 370°C. The W-phase is more stable and melts at ∼ 420°C. Concentration of defects associated with I-phase decreases after annealing at temperatures above ∼ 300°C. (paper)

  12. Trap characterization by photo-transferred thermoluminescence in MgO nanoparticles

    Science.gov (United States)

    Isik, M.; Gasanly, N. M.

    2018-05-01

    Shallow trapping centers in MgO nanoparticles were characterized using photo-transferred thermoluminescence (TL) measurements. Experiments were carried out in low temperature range of 10-280 K with constant heating rate. Shallow traps were filled with charge carriers firstly by irradiating the sample at room temperature using S90/Y90 source and then illuminating at 10 K using blue LED. TL glow curve exhibited one peak around 150 K. Curve fitting analyses showed that this peak is composed of two individual peaks with maximum temperatures of 149.0 and 155.3 K. The activation energies of corresponding trapping centers were revealed as 0.70 and 0.91 eV. The dominant mechanism for TL process was found as second order kinetics which represent that fast retrapping is effective transitions taking place within the band gap. Structural characterization of MgO nanoparticles were investigated using x-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. Analyses of experimental observations indicated that MgO nanoparticles show good crystallinity with particle size in nanometer scale.

  13. Numerical investigations on the characteristics of thermomagnetic instability in MgB2 bulks

    Science.gov (United States)

    Xia, Jing; Li, Maosheng; Zhou, Youhe

    2017-07-01

    This paper presents the characteristics of thermomagnetic instability in MgB2 bulks by numerically solving the macroscopic dynamics of thermomagnetic interaction governed by the coupled magnetic and heat diffusion equations in association with a modified E-J power-law relationship. The finite element method is used to discretize the system of partial differential equations. The calculated magnetization loops with flux jumps are consistent with the experimental results for MgB2 slabs bathed in a wide range of ambient temperatures. We reveal the evolution process of the thermomagnetic instability and present the distributions of the magnetic field, temperature, and current density before and after flux jumps. A 2D axisymmetric model is used to study the thermomagnetic instability in cylindrical MgB2 bulks. It is found that the number of flux jumps monotonously reduces as the ambient temperature rises and no flux jump appears when the ambient temperature exceeds a certain value. Moreover, the flux-jump phenomenon exists in a wide range of the ramp rate of the applied external field, i.e. 10-2-102 T s-1. Furthermore, the dependences of the first flux-jump field on the ambient temperature, ramp rate, and bulk thickness are investigated. The critical bulk thicknesses for stability are obtained for different ambient temperatures and sample radii. In addition, the influence of the capability of the interfacial heat transfer on the temporal response of the bulk temperature is discussed. We also find that the prediction of thermomagnetic instability is sensitive to the employment of the flux creep exponent in the simulations.

  14. Composition dependency of the glass forming ability (GFA) in Mg-Ni-Si system by mechanical alloying

    International Nuclear Information System (INIS)

    Xie Haowen; Lin Jianguo; Li Yuncang; Hodgson, Peter D.; Wen Cuie

    2007-01-01

    The pure elemental powder mixtures with the compositions of Mg 65 Ni x Si 35-x (x = 10, 20, 25, 33 at.%) were subject to high-energy ball mill, and the structures of the mixtures at different intervals of milling were characterised by X-ray diffraction (XRD). The compositional dependency of the glass forming ability (GFA) in Mg-Ni-Si system was evaluated based on the experimental results and the theoretical calculation. The compositional dependency of GFA in Mg-Ni-Si system can be understood well by comparing the enthalpies of the crystalline and amorphous phases based on the Miedema's theory for the formation enthalpy of alloys. Increasing the Ni/Mg ratio and/or decreasing Si content can improve the amorphous formability. The calculation results might be of great help in optimising the composition with high GFA in Mg-Ni-Si system

  15. Making the semiconductor-metal transition in a growth-dominant phase-change alloy InSb for double density blu-ray super-RENS-ROM disc

    Energy Technology Data Exchange (ETDEWEB)

    Hyot, Berangere [CEA, LETI, MINATEC, F- 38054 Grenoble (France)

    2012-10-15

    Phenomenologically, a semiconductor-metal transition is characterized by a sudden change in electrical properties but also in optical behaviours, as a consequence of a change in electron behaviour. The ability to induce a reversible semiconductor-metal transition in a material by varying conditions such as applied temperature or electrical field, results in attractive changes in properties that have fuelled the curiosity of scientists. In this paper, we discuss the interest of such materials exhibiting the reversible semiconductor-metal transition in the development of the next generation of optical Bly-ray discs (BD), the so-called super-resolution near field structure (super-RENS) discs and we show that InSb semiconductor material exhibits huge variations of its optical properties during the optically (thermally)-induced solid-to-liquid change corresponding to a semiconductor-metal transition. First success in the video playback on HDTV (High Definition TeleVision) display from 50 GB (BD capacity x 2) InSb-based super-RENS-ROM discs including a high definition video content with 1920 x 1080 pixels was realized in September 2009 by the super-RENS consortium joining three partners: AIST (National Institute of Advanced Industrial Science and Technology), Mitsubishi Electric Co. and LETI. Snapshot of high definition video content from InSb-based super-RENS-ROM disc corresponding to 50 GB per layer (BD capacity x 2) displayed on HDTV. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Size-dependent structure of CdSe nanoclusters formed after ion implantation in MgO

    NARCIS (Netherlands)

    van Huis, MA; van Veen, A; Schut, H; Eijt, SWH; Kooi, BJ; De Hosson, JTM

    The band gap as well as the optical and structural properties of semiconductor CdSe nanoclusters change as a function of the nanocluster size. Embedded CdSe nanoclusters in MgO were created by means of sequential Cd and Se ion implantation followed by thermal annealing. Changes during annealing were

  17. COLOUR CENTRES IN OXIDESEffect of the V- ↔ V= transformation on positron annihilation lifetime spectra in MgO

    OpenAIRE

    Mallard , W.; Hsu , F.; Vance , E.

    1980-01-01

    Positron annihilation lifetime spectra have been measured in MgO : OD- containing ~ 20 ppm of isolated cation vacancies produced by electron irradiation. For the V- ↔ V= transformation, the intensities of the longer-lived lifetime components were enhanced slightly when the vacancies trapped holes and reduced when holes were released.

  18. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    International Nuclear Information System (INIS)

    Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-01-01

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O 2 is introduced during the postannealing process is attributed to the fact that annealing in an O 2 -containing environment can enhance the dissociation of Mg Ga -H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation

  19. Persistence of metastable vortex lattice domains in MgB2 in the presence of vortex motion.

    Science.gov (United States)

    Rastovski, C; Schlesinger, K J; Gannon, W J; Dewhurst, C D; DeBeer-Schmitt, L; Zhigadlo, N D; Karpinski, J; Eskildsen, M R

    2013-09-06

    Recently, extensive vortex lattice metastability was reported in MgB2 in connection with a second-order rotational phase transition. However, the mechanism responsible for these well-ordered metastable vortex lattice phases is not well understood. Using small-angle neutron scattering, we studied the vortex lattice in MgB2 as it was driven from a metastable to the ground state through a series of small changes in the applied magnetic field. Our results show that metastable vortex lattice domains persist in the presence of substantial vortex motion and directly demonstrate that the metastability is not due to vortex pinning. Instead, we propose that it is due to the jamming of counterrotated vortex lattice domains which prevents a rotation to the ground state orientation.

  20. Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing

    Science.gov (United States)

    Zhao, Chong-Jun; Liu, Yang; Zhang, Jing-Yan; Sun, Li; Ding, Lei; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Yu, Guang-Hua

    2012-08-01

    To reveal thermal effects on the film quality/microstructure evolution and the resulted magnetoresistance (MR) ratio in MgO/NiFe/MgO heterostructures, positron annihilation spectroscopy studies have been performed. It is found that the ionic interstitials in the MgO layers recombine with the nearby vacancies at lower annealing temperatures (200-300 °C) and lead to a slow increase in sample MR. Meanwhile, vacancy defects agglomeration/removal and ordering acceleration in MgO will occur at higher annealing temperatures (450-550 °C) and the improved MgO and MgO/NiFe interfaces microstructure are responsible for the observed significant MR enhancement.

  1. First-principles study of the (0001)-MgB2 surface finished in Mg and B

    International Nuclear Information System (INIS)

    Segura, Sully; Martínez, Jairo Arbey Rodríguez; Moreno-Armenta, María Guadalupe

    2014-01-01

    We present a study based on Density Functional Theory (DFT) of the volume and two surfaces (0001) of MgB 2 , one of them terminated in Mg and the other one terminated in B. Each one of the surface was relaxed and their electronic properties were determined. From calculation of the enthalpy of formation we found that the Mg-terminated surface is energetically favored. The bands seem to present a formation similar to the Dirac's cone as that are presented in graphene, but in MgB 2 is above of the Fermi level. In the three cases, volume and the two surfaces, the behaviour is boron-metallic, because there are strong presence of B orbital's in the neighborhood of the Ferm level

  2. Modeling defects and plasticity in MgSiO3 post-perovskite: Part 1-generalized stacking faults.

    Science.gov (United States)

    Goryaeva, Alexandra M; Carrez, Philippe; Cordier, Patrick

    In this work, we examine the transferability of a pairwise potential model (derived for MgSiO 3 perovskite) to accurately compute the excess energies of the generalized stacking faults (GSF, also called γ -surfaces) in MgSiO 3 post-perovskite. All calculations have been performed at 120 GPa, a pressure relevant to the D″ layer. Taking into account an important aspect of crystal chemistry for complex materials, we consider in detail all possible locations of slip planes in the post-perovskite structure. The γ -surface calculations emphasize the easiness of glide of slip systems with the smallest shear vector [100] and of the [001](010) slip system. Our results are in agreement with previous ab initio calculations. This validates the use the chosen potential model for further full atomistic modeling of dislocations in MgSiO 3 post-perovskite.

  3. Effects of Hole-Doping on Superconducting Properties in MgCNi3 and its Relation to Magnetism

    International Nuclear Information System (INIS)

    Alzamora, M.; Sanchez, D. R.; Cindra, M.; Baggio-Saitovitch, E. M.

    2005-01-01

    Low temperature Moessbauer experiments were performed in Fe-doped and in C-deficiency MgCNi 3 . No magnetic moment was found for Fe in MgC(Ni 0.99 Fe 0.01 ) 3 sample and no magnetic hf field was observed at any temperature for all the samples. These results shown no evidence of magnetic fluctuation or magnetic ordering influencing the depress of superconductivity in hole-doped MgCNi 3 .

  4. Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

    International Nuclear Information System (INIS)

    Jund, Philippe; Viennois, Romain; Tédenac, Jean-Claude; Colinet, Catherine; Hug, Gilles; Fèvre, Mathieu

    2013-01-01

    We report an ab initio study of the semiconducting Mg 2 X (with X = Si, Ge) compounds and in particular we analyze the formation energies of the different point defects with the aim of understanding the intrinsic doping mechanisms. We find that the formation energy of Mg 2 Ge is 50% larger than that of Mg 2 Si, in agreement with the experimental tendency. From a study of the stability and the electronic properties of the most stable defects, taking into account the growth conditions, we show that the main cause of the n doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg 2 Ge than in Mg 2 Si, this explains why Mg 2 Ge can be of n or p type, in contrast to Mg 2 Si. The finding that the most stable defects are different in Mg 2 Si and Mg 2 Ge and depend on the growth conditions is important and must be taken into account in the search for the optimal doping to improve the thermoelectric properties of these materials.

  5. A Computational Investigation of Precipitates in Mg-RE Alloys With Applications To Mg-X Systems

    Science.gov (United States)

    Issa, Ahmed

    Increasing fuel efficiency in transportation vehicles is a major policy goal for both government and auto and aerospace manufacturers. Lightweight structural materials, such as magnesium alloys, hold great promise in enabling such fuel efficiency gains. Understanding the controlling factors in Mg alloy strengthening is crucial for the rational design of structurally strong and inexpensive Mg alloys. In this work, we seek to understand the energetic underpinnings giving rise to a class of remarkably strong Mg alloys: Mg-RE systems. We use first-principles methods to efficiently explore seventeen Mg-RE systems, drawing out broad patterns and distilling our knowledge into simple design rules for Mg alloys. We begin by investigating the controlling factors for the Mg-strengthening prismatic plate precipitates in Mg-RE systems, discovering the critical role of strain in such systems. We then proceed to investigate the surprising role of interfacial energies in determining the course of the Mg-RE precipitation reactions. Using strain and interfacial energies, we construct a phase-field model which accurately depicts the precipitate morphology as a function of time and size in a Mg-Nd system. Finally, we combine our gained insights to implement a computational alloy design scheme on a large portion of the periodic table where we seek Mg-strengthening solutes. Our work advances the understanding of strengthening in Mg alloys and lays the groundwork for full scale computational alloy design.

  6. Optical absorption and thermoluminescence in Mg O, Mg O:Ni and Mg O:Li irradiated at room temperature

    International Nuclear Information System (INIS)

    Delgado, L.

    1984-01-01

    Optical absorption and thermoluminescence (TL) studies in Mg O, Mg O:Ni and Mg O:Li irradiated at room temperature are presented. In pure Mg O the thermal annihilation of Fe3+ by recombination with thermally released electrons at ∼ 90 and 175 degree centigree and the V center annealing by hole release up to 100 degree centigree cause the observed glow peaks at these temperatures. The TL excitation spectrum shows two maxima at 245 nm (electron center) and 288 nm (Fe3+). In Mg O:Ni X irradiation induces Fe 2 + →- Fe 3 + and Ni 2 + → Ni 3 + oxidations. Two TL emission bands centered at 110 degree centigree (red) and 80 o C (green) are assigned to electron release and their recombination at Fe 3 + and Ni 3 + respectively. In Mg O:Li two TL emission bands, one blue (430 nm) and the other red (730 nm) with excitation maxima at 245 nm (electron center) and 200 nm (hole center) respectively are observed. No V-center formation was detected in both Ni and Li doped samples. (Author) 42 refs

  7. Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Science.gov (United States)

    Samajdar, D. P.; Dhar, S.

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1−xBix and InSb1−xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E − energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. PMID:24592181

  8. Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

    Science.gov (United States)

    Samajdar, D P; Dhar, S

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  9. Physical properties in flux line lattice state in MgB2 probed by μSR

    International Nuclear Information System (INIS)

    Ohishi, Kazuki; Muranaka, Takahiro; Akimitsu, Jun; Koda, Akihiro; Higemoto, Wataru; Kadono, Ryosuke

    2002-01-01

    We have performed muon spin rotation (μSR) measurements to deduce the magnetic penetration depth λ in the flux line lattice state of MgB 2 microscopically. It is observed that λ shows a quadratic temperature dependence which is predicted for the case of superconducting gap with line nodes. Furthermore, it clearly exhibits a strong field dependence, where λ increases almost linearly with H. These results strongly suggest that the superconducting order parameter in MgB 2 is highly anisotropic. (author)

  10. Depth-selective 2D-ACAR and coincidence Doppler investigation of embedded Au nanocrystals in MgO

    International Nuclear Information System (INIS)

    Eijt, S.W.H.; Veen, A. van; Falub, C.V.; Schut, H.; Huis, M.A. van; Mijnarends, P.E.

    2004-01-01

    We present a depth-selective 2D-ACAR and two-detector Doppler broadening study on Au nanocrystals in monocrystalline MgO(100), produced in sub-surface layers by ion implantation and subsequent thermal annealing to temperatures beyond the stability range of vacancy clusters in MgO. In contrast to the case of Li nanocrystals, it was found that positrons do not trap inside the Au nanocrystals, but only in defects at the nanocrystal-to-host interface (attached vacancy clusters). This is interpreted in terms of the positron affinity of Au, MgO and the defects. (orig.)

  11. Mapping flux avalanches in MgB2 films-equivalence between magneto-optical imaging and magnetic measurements

    International Nuclear Information System (INIS)

    Colauto, F; Choi, E M; Lee, J Y; Lee, S I; Yurchenko, V V; Johansen, T H; Ortiz, W A

    2007-01-01

    Vortex avalanches are known to occur in MgB 2 films within a certain range of temperatures and magnetic fields. These events, resulting from a thermomagnetic instability, were first revealed by real-time magneto-optical imaging, which exposed dendritic paths of abrupt flux propagation. This very powerful technique has, however, a practical limitation, since sensors that are currently available cannot be used at high magnetic fields. This letter shows that results obtained using dc magnetometry are in good correspondence with those furnished by magneto-optical imaging, demonstrating that the two techniques can be efficiently used as complementary tools to map vortex avalanches in superconducting films. (rapid communication)

  12. Size-dependent structure of CdSe nanoclusters formed after ion implantation in MgO

    OpenAIRE

    van Huis, MA; van Veen, A; Schut, H; Eijt, SWH; Kooi, BJ; De Hosson, JTM

    2005-01-01

    The band gap as well as the optical and structural properties of semiconductor CdSe nanoclusters change as a function of the nanocluster size. Embedded CdSe nanoclusters in MgO were created by means of sequential Cd and Se ion implantation followed by thermal annealing. Changes during annealing were monitored using optical absorption and positron annihilation spectroscopy. High-resolution TEM on cross-sections after annealing at a temperature of 1300 K showed that clusters with a size below 5...

  13. Depth-selective 2D-ACAR and coincidence Doppler investigation of embedded Au nanocrystals in MgO

    Energy Technology Data Exchange (ETDEWEB)

    Eijt, S.W.H.; Veen, A. van; Falub, C.V.; Schut, H.; Huis, M.A. van [Interfaculty Reactor Inst., Delft Univ. of Technology, Delft (Netherlands); Mijnarends, P.E. [Interfaculty Reactor Inst., Delft Univ. of Technology, Delft (Netherlands); Dept. of Physics, Northeastern Univ., Boston, MA (United States)

    2004-07-01

    We present a depth-selective 2D-ACAR and two-detector Doppler broadening study on Au nanocrystals in monocrystalline MgO(100), produced in sub-surface layers by ion implantation and subsequent thermal annealing to temperatures beyond the stability range of vacancy clusters in MgO. In contrast to the case of Li nanocrystals, it was found that positrons do not trap inside the Au nanocrystals, but only in defects at the nanocrystal-to-host interface (attached vacancy clusters). This is interpreted in terms of the positron affinity of Au, MgO and the defects. (orig.)

  14. Nanocavity formation processes in MgO(100) by light ion (D, He, Li) and heavy ion (Kr, Cu, Au) implantation

    NARCIS (Netherlands)

    Veen, A. van; Fedorov, A.V.; Schut, H.; Labohm, F.; Kooi, B.J.; Hosson, J.Th.M. De

    2002-01-01

    In studies on the controlled growth of metallic precipitates in MgO it is attempted to use nanometer size cavities as precursors for formation of metallic precipitates. In MgO nanocavities can easily be generated by light gas ion bombardment at room temperature with typically 30 keV ion energy to a

  15. Diameter dependence of emission power in MgO-based nano-pillar spin-torque oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bochong; Kubota, Hitoshi, E-mail: hit-kubota@aist.go.jp; Yakushiji, Kay; Tamaru, Shingo; Arai, Hiroko; Imamura, Hiroshi; Fukushima, Akio; Yuasa, Shinji [Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-06-20

    The dependence on diameter of the emission power in MgO-based nano-pillar spin torque oscillators (STOs) was systematically investigated. A maximum emission power of over 2.5 μW was obtained around 300 nm in diameter, which is the largest reported to date among the out-of-plane precession STOs. By analyzing physical quantities, precession cone angle of the free-layer magnetization was evaluated. In the diameter range below 300 nm, the increase in power was mainly due to the increase of the injected current. The power decrease above 300 nm is possibly attributed to the decrease in the averaged precession cone angle, suggesting spatial phase difference of magnetization precession. This study provides the method for estimating the optimum STO diameter, which is of great importance in practical use.

  16. Size-dependent structure of CdSe nanoclusters formed after ion implantation in MgO

    International Nuclear Information System (INIS)

    Huis, M.A. van; Veen, A. van; Schut, H.; Eijt, S.W.H.; Kooi, B.J.; Hosson, J.Th.M. de

    2005-01-01

    The band gap as well as the optical and structural properties of semiconductor CdSe nanoclusters change as a function of the nanocluster size. Embedded CdSe nanoclusters in MgO were created by means of sequential Cd and Se ion implantation followed by thermal annealing. Changes during annealing were monitored using optical absorption and positron annihilation spectroscopy. High-resolution TEM on cross-sections after annealing at a temperature of 1300 K showed that clusters with a size below 5 nm have the high-pressure rock-salt structure and are in a cube-on-cube orientation relation with MgO, whereas clusters larger than 5 nm adopt the stable wurtzite crystal structure and were observed in two different orientation relations with MgO

  17. Direct observation of superconducting gaps in MgB{sub 2} by angle-resolved photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Souma, S.; Machida, Y.; Sato, T.; Takahashi, T.; Matsui, H.; Wang, S.-C.; Ding, H.; Kaminski, A.; Campuzano, J.C.; Sasaki, S.; Kadowaki, K

    2004-08-01

    High-resolution angle-resolved photoemission spectroscopy has been carried out to clarify the anomalous superconductivity of MgB{sub 2}. We observed three bands crossing the Fermi level, which are ascribed to B2p-{sigma}, {pi} and surface bands. We have succeeded for the first time in directly observing the superconducting gaps of these bands separately. We have found that the superconducting-gap sizes of {sigma} and surface bands are 6.5 {+-} 0.5 and 6.0 {+-} 0.5 meV, respectively, while that of the {pi} band is much smaller (1.5 {+-} 0.5 meV). The present experimental result unambiguously demonstrates the validity of the two-band superconductivity in MgB{sub 2}.

  18. Magnesium Vacancy Segregation and Fast Pipe Diffusion for the ½{110} Edge Dislocation in MgO

    Science.gov (United States)

    Walker, A. M.; Zhang, F.; Wright, K.; Gale, J. D.

    2009-12-01

    The movement of point defects in minerals plays a key role in determining their rheological properties, both by permitting diffusional creep and by allowing recovery by dislocation climb. Point defect diffusion can also control the kinetics of phase transitions and grain growth, and can determine the rate of chemical equilibration between phases. Because of this, and the difficulties associated with experimental studies of diffusion, the simulation of point defect formation and migration has been a subject of considerable interest in computational mineral physics. So far, studies have concentrated on point defects moving through otherwise perfect crystals. In this work we examine the behavior of magnesium vacancies close to the core of an edge dislocation in MgO and find that the dislocation dramatically changes the behavior of the point defect. An atomic scale model of the ½{110} edge dislocation in MgO was constructed by applying the anisotropic linear elastic displacement field to the crystal structure and subsequently minimizing the energy of the crystal close to the dislocation core using a parameterized potential model. This process yielded the structure of an isolated edge dislocation in an otherwise perfect crystal. The energy cost associated with introducing magnesium vacancies around the dislocation was then mapped and compared to the formation energy of an isolated magnesium vacancy in bulk MgO. We find that the formation energy of magnesium vacancies around the dislocation mirrors the elastic strain field. Above the dislocation line σxx and σyy are negative and the strain field is compressional. Atoms are squeezed together to make room for the extra half plane effectively increasing the pressure in this region. Below the dislocation line σxx and σyy are positive and the strain field is dilatational. Planes of atoms are pulled apart to avoid a discontinuity across the glide plane and the effective pressure is decreased. In the region with a

  19. Rearrangements under confinement lead to increased binding energy of Synaptotagmin-1 with anionic membranes in Mg2+ and Ca2.

    Science.gov (United States)

    Gruget, Clémence; Coleman, Jeff; Bello, Oscar; Krishnakumar, Shyam S; Perez, Eric; Rothman, James E; Pincet, Frederic; Donaldson, Stephen H

    2018-05-01

    Synaptotagmin-1 (Syt1) is the primary calcium sensor (Ca 2+ ) that mediates neurotransmitter release at the synapse. The tandem C2 domains (C2A and C2B) of Syt1 exhibit functionally critical, Ca 2+ -dependent interactions with the plasma membrane. With the surface forces apparatus, we directly measure the binding energy of membrane-anchored Syt1 to an anionic membrane and find that Syt1 binds with ~6 k B T in EGTA, ~10 k B T in Mg 2+ and ~18 k B T in Ca 2+ . Molecular rearrangements measured during confinement are more prevalent in Ca 2+ and Mg 2+ and suggest that Syt1 initially binds through C2B, then reorients the C2 domains into the preferred binding configuration. These results provide energetic and mechanistic details of the Syt1 Ca 2+ -activation process in synaptic transmission. © 2018 Federation of European Biochemical Societies.

  20. A study of stability of MgH{sub 2} in Mg-8at%Al alloy powder

    Energy Technology Data Exchange (ETDEWEB)

    Tanniru, Mahesh; Ebrahimi, Fereshteh [Materials Science and Engineering Department, University of Florida, Gainesville, FL 32611 (United States); Slattery, Darlene K. [Florida Solar Energy Center (FSEC), Cocoa, FL (United States)

    2010-04-15

    To investigate the effect of Al addition on the stability of magnesium hydride, the hydrogenation characteristics of a Mg-8at%Al alloy powder synthesized using the electrodeposition technique were evaluated. The characterization of the hydrogenation behavior within the 180 C-280 C temperature range and the subsequent microstructural analysis elucidated that the amount of Al present in the hydride decreased with increasing temperature. This observation suggests that Al has very low solubility in magnesium hydride but Al can be accommodated in MgH{sub 2} by processing under non-equilibrium conditions. Pressure-composition isotherms were developed at different temperatures for the Mg-Al powder as well as pure Mg powder. The results indicate that the enthalpy of formation was slightly lower for the Mg-8at%Al powder while the enthalpy of dissociation did not change. The absence of noticeable influence of Al addition on the stability of magnesium hydride is attributed to its lack of solubility. (author)

  1. High pressure phase transitions in Mg{sub 1-x}Ca{sub x}O: Theory

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Anurag; Chauhan, Mamta [Advanced Material Research Lab, Indian Institute of Information Technology and Management, Gwalior (India); Singh, R.K. [Department of Physics, ITM University, Gurgaon (India); Padegaonker, Rishikesh [Indian Embassy School, Sana (Yemen)

    2011-08-15

    We have analysed a B1 {yields} B2 structural phase transitions in Mg{sub 1-x}Ca{sub x}O solid solutions and their ground state properties by using first principle density functional theory and charge transfer interaction potential (CTIP) approach. The effects of exchange-correlation interactions are handled by the generalized gradient approximation with Perdew-Burke-Ernzerhof type parameterization. CTIP approach includes the long range modified Coulomb with charge transfer interactions and short range part of this model includes the van der Waals as well as Hafemeister Flygare type overlap repulsive interactions. The study observes a linear variation of calculated transition pressure, bulk modulus and lattice parameter of Mg{sub 1-x}Ca{sub x}O as a function of Ca composition. The observed results for the end point members are in agreement to their experimental counterparts and the deviations have been discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Microstructure and kinetics evolution in MgH2–TiO2 pellets after hydrogen cycling

    International Nuclear Information System (INIS)

    Mirabile Gattia, D.; Di Girolamo, G.; Montone, A.

    2014-01-01

    Highlights: • MgH 2 was ball milled with TiO 2 anatase phase and expanded graphite to prepare pellets. • Different pellets have been prepared at different compression load. • Pellets were repeatedly cycled under hydrogen pressure to simulate tank exercise and verify their stability. • The compression load highly affects the stability of the pellets to cycling. • Microstructural evolution of the particles due to cycling have been observed. - Abstract: The interest in Mg-based hydrides for solid state hydrogen storage is associated to their capability to reversibly absorb and desorb large amounts of hydrogen. In this work MgH 2 powder with 5 wt.% TiO 2 was ball milled for 10 h. The as-milled nanostructured powder was enriched with 5 wt.% of Expanded Natural Graphite (ENG) and then compacted in cylindrical pellets by cold pressing using different loads. Both the powder and the pellets were subjected to kinetic and thermodynamic tests using a Sievert’s type gas reaction controller, in order to study the microstructural and kinetic changes which took place during repeated H 2 absorption and desorption cycles. The pellets exhibited good kinetic performance and durability, even if the pressure of compaction revealed to be an important parameter for their mechanical stability. Scanning Electron Microscopy observations of as-prepared and cycled pellets were carried out to investigate the evolution of their microstructure. In turn the phase composition before and after cycling was analyzed by X-ray diffraction

  3. Copper implantation defects in MgO observed by positron beam analysis, RBS and X-TEM

    International Nuclear Information System (INIS)

    Huis, M.A. van; Fedorov, A.V.; Veen, A. van; Smulders, P.J.M.; Kooi, B.J.; Hosson, J.Th.M. de

    2000-01-01

    In this work, effects of copper ion implantation in MgO were studied. (1 0 0) MgO samples were implanted with 50 keV Cu ions and thermally annealed stepwise in air for 30 minutes at 550, 750, 1000, 1250 and 1350 K. After ion implantation and after each annealing step, the samples were analysed with positron beam analysis (PBA). Use was also made of Rutherford backscattering spectrometry/channeling (RBS-C) and cross-sectional transmission electron microscopy (X-TEM). The combination of these techniques enabled to monitor the depth resolved evolution of both created defects and the copper atom depth distribution. PBA results show that copper implantation at a dose of 10 15 ions cm -2 yields a single layer of vacancy type defects after annealing. However a copper implantation at a dose of 10 16 ions cm -2 clearly yields two layers of defects in the material after annealing, separated by an intermediate layer. In both layers nanocavities have been identified. RBS experimental results show that the implanted copper atoms diffuse into the bulk material during annealing. X-TEM and channeling results show that after annealing, the lattice of the copper nanoprecipitates is epitaxial to the MgO host lattice. Under some circumstances, copper precipitates and small voids can co-exist. Furthermore, X-TEM measurements show that the nanocavities have rectangular shapes

  4. Catalytically Enhanced Hydrogen Sorption in Mg-MgH2 by Coupling Vanadium-Based Catalyst and Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Atikah Kadri

    2015-06-01

    Full Text Available Mg (MgH2-based composites, using carbon nanotubes (CNTs and pre-synthesized vanadium-based complex (VCat as the catalysts, were prepared by high-energy ball milling technique. The synergistic effect of coupling CNTs and VCat in MgH2 was observed for an ultra-fast absorption rate of 6.50 wt. % of hydrogen per minute and 6.50 wt. % of hydrogen release in 10 min at 200 °C and 300 °C, respectively. The temperature programmed desorption (TPD results reveal that coupling VCat and CNTs reduces both peak and onset temperatures by more than 60 °C and 114 °C, respectively. In addition, the presence of both VCat and CNTs reduces the enthalpy and entropy of desorption of about 7 kJ/mol H2 and 11 J/mol H2·K, respectively, as compared to those of the commercial MgH2, which ascribe to the decrease of desorption temperature. From the study of the effect of CNTs milling time, it is shown that partially destroyed CNTs (shorter milling time are better to enhance the hydrogen sorption performance.

  5. The elastic properties, generalized stacking fault energy and dissociated dislocations in MgB2 under different pressure

    KAUST Repository

    Feng, Huifang

    2013-05-31

    The 〈112̄0〉 perfect dislocation in MgB2 is suggested to dissociate into two partial dislocations in an energy favorable way 〈112̄0〉 → 1/2 〈112̄0〉 + SF + 1/2 〈112̄0〉. This dissociation style is a correction of the previous dissociation 〈1000〉 → 1/3 〈11̄00〉 SF + 1/3 〈 2100〉proposed by Zhu et al. to model the partial dislocations and stacking fault observed by transmission electron microscopy. The latter dissociation results in a maximal stacking fault energy rather than a minimal one according to the generalized stacking fault energy calculated from first-principles methods. Furthermore, the elastic constants and anisotropy of MgB2 under different pressure are investigated. The core structures and mobilities of the 〈112̄0〉 dissociated dislocations are studied within the modified Peierls-Nabarro (P-N) dislocation theory. The variational method is used to solve the modified P-N dislocation equation and the Peierls stress is also determined under different pressure. High pressure effects on elastic anisotropy, core structure and Peierls stress are also presented. © 2013 Springer Science+Business Media New York.

  6. Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Guangfei [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Simian [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Huang, Huan [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Wang, Yang, E-mail: ywang@siom.ac.cn [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Lai, Tianshu, E-mail: stslts@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2013-09-01

    Direct comparison of the real-time in-situ crystallization behavior of as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (GeSbTe) and Ag{sub 8}In{sub 14}Sb{sub 55}Te{sub 23} (AgInSbTe) phase-change thin films driven by picosecond laser pulses was performed by a time-resolved optical pump-probe technique with nanosecond resolution. Different optical transients showed various crystallization processes because of the dissimilar nucleation- and growth-dominated mechanisms of the two materials. The effects of laser pulse fluence, thermal conductive structure, and successive pulse irradiation on their crystallization dynamics were also discussed. A schematic was then established to describe the different crystallization processes beginning from the as-deposited amorphous state. The results may provide further insight into the phase-change mechanism under extra-non-equilibrium conditions and aid the development of ultrafast phase-change memory materials.

  7. Properties of the quantum Hall effect of the two-dimensional electron gas in the n-inversion layer of InSb grain boundaries under high hydrostatic pressure

    International Nuclear Information System (INIS)

    Kraak, W.; Nachtwei, G.; Herrmann, R.; Glinski, M.

    1988-01-01

    The magnetotransport properties of the two-dimensional electron gas (2DEG) confined at the interface of the grain boundary in p-type InSb bicrystals are investigated. Under high hydrostatic pressures and in high magnetic fields (B > 5 T) the integral quantum Hall regime is reached, where the Hall resistance ρ xy is quantized to h/e 2 j (j is the number of filled Landau levels of the 2DEG). In this high field regime detailed measurements are given of the resistivity ρ xx and the Hall resistance ρ xy as function of temperature T and current density j x . An unexpected high accuracy of the Hall resistance ρ xy at magnetic field values close to a fully occupied Landau level is found, despite the high value of the diagonal resistivity ρ xx . At high current densities j x in the quantum Hall regime (j = 1) a sudden breakdown of the quantized resistance value associated with a jump-like switching to the next lower quantized value h/2e 2 is observed. A simple macroscopic picture is proposed to account for these novel transport properties associated with the quantum Hall effect. (author)

  8. Multi-scale 3D characterization of long period stacking ordered structure in Mg-Zn-Gd cast alloys.

    Science.gov (United States)

    Ishida, Masahiro; Yoshioka, Satoru; Yamamoto, Tomokazu; Yasuda, Kazuhiro; Matsumura, Syo

    2014-11-01

    Magnesium alloys containing rare earth elements are attractive as lightweight structural materials due to their low density, high-specific strength and recycling efficiency. Mg-Zn-Gd system is one of promising systems because of their high creep-resistant property[1]. It is reported that the coherent precipitation formation of the 14H long period stacking ordered structure (LPSO) in Mg-Zn-Gd system at temperatures higher than 623 K[2,3]. In this study, the 14H LPSO phase formed in Mg-Zn-Gd alloys were investigated by multi-scale characterization with X-ray computer tomography (X-CT), focused ion beam (FIB) tomography and aberration-corrected STEM observation for further understanding of the LPSO formation mechanism.The Mg89.5 Zn4.5 Gd6 alloy ingots were cast using high-frequency induction heating in argon atmosphere. The specimens were aged at 753 K for 24 h in air. The aged specimen were cut and polished mechanically for microstructural analysis. The micrometer resolution X-CT observation was performed by conventional scaner (Bruker SKY- SCAN1172) at 80 kV. The FIB tomography and energy dispersive x-ray spectroscopy (EDS) were carried out by a dual beam FIB-SEM system (Hitachi MI-4000L) with silicon drift detector (SDD) (Oxford X-Max(N)). The electron acceleration voltages were used with 3 kV for SEM observation and 10 kV for EDX spectroscopy. The 3D reconstruction from image series was performed by Avizo Fire 8.0 software (FEI). TEM/STEM observations were also performed by transmission electron microscopes (JEOL JEM 2100, JEM-ARM 200F) at the acceleration voltage of 200 keV.The LPSO phase was observed clearly in SEM image of the Mg89.5Zn4.5Gd6 alloy at 753 K for 2h (Fig.1 (a)). The atomic structure of LPSO phase observed as white gray region of SEM image was also confirmed as 14H LPSO structure by using selected electron diffraction patterns and high-resolution STEM observations. The elemental composition of LPSO phase was determined as Mg97Zn1Gd2 by EDS analyses

  9. The Systematics of Activity-Composition Relations in Mg-Fe2+ Oxide and Silicate Solid Solutions

    Science.gov (United States)

    O'Neill, H. S.

    2006-12-01

    The need to quantify activity-composition relations of mineral solid solutions for petrologic modelling has prompted many experimental studies, but different studies on the same system often appear to show a startling lack of consistency. A good example is Mg-Fe2+ mixing in garnet (the pyrope-almandine join). This is understandable because the energies of mixing in solid solutions are often obtained experimentally as small difference between large numbers. In particular, the fallacy of using a sequential approach to data fitting to a thermodynamic model leads to the accumulated errors being artificially concentrated onto the last step of the fitting process, which is usually that part of the model dealing with the excess energies of mixing. This gives rise to erroneous activity-composition relations, often apparently showing complex deviations from ideality. Systemizing the results of many studies can reveal underlying patterns of behaviour while also identifying outliers and anomalies that may be worth reinvestigating. Davies and Navrotsky [1] showed that the energies of mixing of many different pairs of ions with the same charge correlated well with the difference in molar volumes of the end-members, within a particular crystal structure. This empirical work is now supported by theoretical calculations. It underlies the modern approach to melt/crystal trace-element partitioning. Provided an internally consistent dataset is used, an analogous correlation may be demonstrated across different crystal structures for the mixing of one pair of ions, such as Mg and Fe2+. Activity-composition relations in MgO-"FeO" magnesiowuestite solutions in equilibrium with iron metal were used to obtain the properties of Mg-Fe olivine solutions from magnesiowuestite/olivine partitioning [2]. New results at 1400 K, 1 bar and 1473 K, 25 kb (O'Neill and Pownceby, in prep.) confirm previous work that mixing in Mg-Fe olivine is regular (symmetrical) with W Mg-Fe = 2.5 kJ/mol, with an

  10. Hot working mechanisms and texture development in Mg-3Sn-2Ca-0.4Al alloy

    International Nuclear Information System (INIS)

    Dharmendra, C.; Rao, K.P.; Prasad, Y.V.R.K.; Hort, N.; Kainer, K.U.

    2012-01-01

    Hot deformation mechanisms in Mg-3Sn-2Ca (TX32) alloy containing 0.4% Al are evaluated in the temperature and strain rate ranges of 300–500 °C and 0.0003–10 s −1 using processing map and kinetic analysis. The evolution of microstructure and texture during high temperature compression of the alloy has been studied using an electron back scatter diffraction (EBSD) technique. The processing map for hot working revealed two domains of dynamic recrystallization (DRX) occurring in the temperature and strain rate ranges of: (1) 300–360 °C and 0.0003–0.001 s −1 and (2) 400–500 °C and 0.005–0.7 s −1 , which are the two safe hot workability windows for this alloy. A regime of flow instability occurs at higher strain rates and lower temperatures where adiabatic shear banding and flow localization are the microstructural manifestations. The onset of DRX during compression at lower temperatures and strain rates (Domain 1) resulted in a fine, partially recrystallized and necklaced grain microstructure along with a texture where the basal poles are spread along 30° from the compression direction. Specimens deformed at temperatures higher than 450 °C (Domain 2) resulted in a fully recrystallized microstructure and an almost random crystallographic texture, which was attributed to the significant occurrence of pyramidal slip and associated cross-slip. -- Highlights: ► Processing map revealed two DRX domains for hot working of Mg-3Sn-2Ca-0.4Al alloy. ► The alloy exhibited flow instability at lower temperatures and higher strain rates. ► Activation energy values for deformation are high due to the back stress. ► Basal poles spread around 30° to the compression axis for Domain 1 peak condition. ► Texture got randomized at high temperature and strain rate conditions in Domain 2.

  11. Annealing effect of thermal spike in MgO thin film prepared by cathodic vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Daoyun, E-mail: zhudy@gdut.edu.cn [Experiment Teaching Department, Guangdong University of Technology, Guangzhou 510006 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Zhao, Shoubai [School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510400 (China); Zheng, Changxi; Chen, Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); He, Zhenhui, E-mail: stshzh@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2013-12-16

    MgO films were prepared by using pulsed cathodic vacuum arc deposition technique. The substrate bias voltage was in the range of −150 to −750 V. Film structure was investigated by X-ray diffraction (XRD). The annealing effect of thermal spike produced by the impacting of energetic ions was analyzed. The calculated results showed that the lifetime of a thermal spike generated by an energetic ion with the energy of 150 eV was less than one picosecond and it was sufficient to allow Mg{sup 2+} or O{sup 2-} to move one bond length to satisfy the intrinsic stress relief in the affected volume. The MgO(200) lattice spacings of the films deposited at different bias voltages were all larger than the ideal value of 2.1056 Å. As the bias amplitude increased the lattice spacing decreased, which indicated that the compressive stress in the film was partially relieved with increasing impacting ion energy. The stress relief also could be reflected from the film orientation with bias voltage. The biaxial elastic modulus for MgO(100), MgO(110) and MgO(111) planes were calculated and they were M{sub (100)} = 199 GPa, M{sub (110)} = 335 GPa and M{sub (111)} = 340 GPa, respectively. The M values indicated that the preferred orientation will be MgO(200) due to the minimum energy configuration when the lattice strain was large. It was confirmed by the XRD results in our experiments. - Highlights: • MgO thin films with preferred orientation were obtained by CVAD technique. • Annealing effect of a thermal spike in MgO film was discussed. • Lattice spacing of MgO film decreased with the increase of bias voltage. • Film preferred orientation changed from (200) to (220) as the bias voltage increased.

  12. Microstructure and kinetics evolution in MgH{sub 2}–TiO{sub 2} pellets after hydrogen cycling

    Energy Technology Data Exchange (ETDEWEB)

    Mirabile Gattia, D., E-mail: daniele.mirabile@enea.it; Di Girolamo, G.; Montone, A.

    2014-12-05

    Highlights: • MgH{sub 2} was ball milled with TiO{sub 2} anatase phase and expanded graphite to prepare pellets. • Different pellets have been prepared at different compression load. • Pellets were repeatedly cycled under hydrogen pressure to simulate tank exercise and verify their stability. • The compression load highly affects the stability of the pellets to cycling. • Microstructural evolution of the particles due to cycling have been observed. - Abstract: The interest in Mg-based hydrides for solid state hydrogen storage is associated to their capability to reversibly absorb and desorb large amounts of hydrogen. In this work MgH{sub 2} powder with 5 wt.% TiO{sub 2} was ball milled for 10 h. The as-milled nanostructured powder was enriched with 5 wt.% of Expanded Natural Graphite (ENG) and then compacted in cylindrical pellets by cold pressing using different loads. Both the powder and the pellets were subjected to kinetic and thermodynamic tests using a Sievert’s type gas reaction controller, in order to study the microstructural and kinetic changes which took place during repeated H{sub 2} absorption and desorption cycles. The pellets exhibited good kinetic performance and durability, even if the pressure of compaction revealed to be an important parameter for their mechanical stability. Scanning Electron Microscopy observations of as-prepared and cycled pellets were carried out to investigate the evolution of their microstructure. In turn the phase composition before and after cycling was analyzed by X-ray diffraction.

  13. Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering

    International Nuclear Information System (INIS)

    Gurevich, A; Patnaik, S; Braccini, V; Kim, K H; Mielke, C; Song, X; Cooley, L D; Bu, S D; Kim, D M; Choi, J H; Belenky, L J; Giencke, J; Lee, M K; Tian, W; Pan, X Q; Siri, A; Hellstrom, E E; Eom, C B; Larbalestier, D C

    2004-01-01

    We report a significant enhancement of the upper critical field H c2 of different MgB 2 samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities ρ, we show a clear trend of an increase in H c2 as ρ increases. One particular high resistivity film had a zero-temperature H c2 (0) well above the H c2 values of competing non-cuprate superconductors such as Nb 3 Sn and Nb-Ti. Our high-field transport measurements give record values H c2 perp (0) ∼ 34 T and H c2 par (0) ∼ 49 T for high resistivity films and H c2 (0) ∼ 29 T for untextured bulk polycrystals. The highest H c2 film also exhibits a significant upward curvature of H c2 (T) and a temperature dependence of the anisotropy parameter γ(T)=H c2 par / H c2 opposite to that of single crystals: γ(T) decreases as the temperature decreases, from γ(T c ) ∼ 2 γ(0) ∼ 1.5. This remarkable H c2 enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in MgB 2 , which offers special opportunities for further H c2 increases by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of H c2 (T) observed suggest that MgB 2 can be made into a versatile, competitive high-field superconductor

  14. Nanocavity formation processes in MgO(100) by light ion (D, He, Li) and heavy ion (Kr, Cu, Au) implantation

    OpenAIRE

    Veen, A. van; Fedorov, A.V.; Schut, H.; Labohm, F.; Kooi, B.J.; Hosson, J.Th.M. De

    2002-01-01

    In studies on the controlled growth of metallic precipitates in MgO it is attempted to use nanometer size cavities as precursors for formation of metallic precipitates. In MgO nanocavities can easily be generated by light gas ion bombardment at room temperature with typically 30 keV ion energy to a dose of 10^16 cm–2, followed by annealing to 1300 K. It has been shown earlier by transmission electron microscopy (TEM) that the cavities (thickness 2–3 nm and length/width 5–10 nm) have a perfect...

  15. Chromite symplectites in Mg-suite troctolite 76535 as evidence for infiltration metasomatism of a lunar layered intrusion

    Science.gov (United States)

    Elardo, Stephen M.; McCubbin, Francis M.; Shearer, Charles K.

    2012-06-01

    Despite the very low chromium concentrations in its cumulus olivine (˜140 ppm), lunar troctolite 76535 contains large amounts of Cr sporadically, but highly concentrated, in symplectite assemblages consisting of Mg-Al-chromite and two pyroxenes. Previously proposed symplectite formation mechanisms include crystallization of trapped interstitial melt, diffusion of Cr from cumulus olivine, and/or remobilization of cumulus chromite grains. These mechanisms would imply that the highly Cr-depleted nature of Mg-suite parental magmas and their source materials inferred from cumulus olivine may be illusory. We have conducted a detailed petrologic and textural study of symplectites, as well as chromite veins, intercumulus assemblages, olivine-hosted melt inclusions and clinopyroxene-troilite veins in 76535 with the goals of constraining the origin of the symplectites, and the degree of Cr-depletion in Mg-suite magmas relative to other lunar basalts. Orthopyroxene and clinopyroxene in melt inclusions are depleted in Cr relative to their symplectite counterparts, averaging 900 and 1200 ppm vs. 7400 and 8100 ppm Cr2O3, respectively. Olivine in contact with symplectite assemblages may exhibit a diffusion profile of Cr going into olivine, whereas olivine boundaries away from symplectites show no diffusion profile. There is also a distinct lack of primary chromite as inclusions in cumulus phases and melt inclusions. Multiple textural observations, melt inclusion chemistry, and modeling of chromite-olivine equilibrium rule out previously proposed symplectite formation mechanisms, and strongly suggest that chromite was not a primary crystallization product of the 76535 parental magma. Accordingly, the post-cumulus addition of Cr and Fe is required to produce the symplectites. After considering multiple models, the addition of Cr and Fe to 76535 via infiltration metasomatism by an exogenous chromite-saturated melt is the model most consistent with multiple textural and geochemical

  16. Hot working mechanisms and texture development in Mg-3Sn-2Ca-0.4Al alloy

    Energy Technology Data Exchange (ETDEWEB)

    Dharmendra, C. [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR (China); Rao, K.P., E-mail: mekprao@cityu.edu.hk [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR (China); Prasad, Y.V.R.K. [Processingmaps.com (formerly at City University of Hong Kong) (Hong Kong); Hort, N.; Kainer, K.U. [Helmholtz-Zentrum Geesthacht, Institute of Materials Research, Magnesium Innovation Centre, Max-Planck-Strasse 1, Geesthact 21502 (Germany)

    2012-10-15

    Hot deformation mechanisms in Mg-3Sn-2Ca (TX32) alloy containing 0.4% Al are evaluated in the temperature and strain rate ranges of 300-500 Degree-Sign C and 0.0003-10 s{sup -1} using processing map and kinetic analysis. The evolution of microstructure and texture during high temperature compression of the alloy has been studied using an electron back scatter diffraction (EBSD) technique. The processing map for hot working revealed two domains of dynamic recrystallization (DRX) occurring in the temperature and strain rate ranges of: (1) 300-360 Degree-Sign C and 0.0003-0.001 s{sup -1} and (2) 400-500 Degree-Sign C and 0.005-0.7 s{sup -1}, which are the two safe hot workability windows for this alloy. A regime of flow instability occurs at higher strain rates and lower temperatures where adiabatic shear banding and flow localization are the microstructural manifestations. The onset of DRX during compression at lower temperatures and strain rates (Domain 1) resulted in a fine, partially recrystallized and necklaced grain microstructure along with a texture where the basal poles are spread along 30 Degree-Sign from the compression direction. Specimens deformed at temperatures higher than 450 Degree-Sign C (Domain 2) resulted in a fully recrystallized microstructure and an almost random crystallographic texture, which was attributed to the significant occurrence of pyramidal slip and associated cross-slip. -- Highlights: Black-Right-Pointing-Pointer Processing map revealed two DRX domains for hot working of Mg-3Sn-2Ca-0.4Al alloy. Black-Right-Pointing-Pointer The alloy exhibited flow instability at lower temperatures and higher strain rates. Black-Right-Pointing-Pointer Activation energy values for deformation are high due to the back stress. Black-Right-Pointing-Pointer Basal poles spread around 30 Degree-Sign to the compression axis for Domain 1 peak condition. Black-Right-Pointing-Pointer Texture got randomized at high temperature and strain rate conditions in

  17. Advances and Achievements in In Situ Analysis of Corrosion and Structure–Property Relationship in Mg Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Orlov, D.; Joshi, V.

    2016-11-03

    Every year, TMS Magnesium Committee carefully selects a special topic in magnesium (Mg) related research and development not only having the hottest subject from both academic and industrial perspectives but also demonstrating major achievements within this subject. Following last year’s topic on Mg microallying [1], this year’s focus is on in-situ methods and associated techniques in their broad definition spanning from laboratory- to large- scale facilities to process monitoring. The applications of in-situ techniques have a wide spectrum from the analysis of melts and liquid-solid transitions to solid-state phenomena during thermo-mechanical processing and heat treatments to surface interactions with various environments. Therefore, such works are of significant interest to scientists working in the area of Mg alloy development as well as to a much broader audience from both academia and industry. This interest is primarily caused by challenges in the analysis of structure-property relationship in Mg alloys, and even cursory glance of literature reveals sharp increase of publications relevant to this topic recently. For instance, very high reactivity of Mg as well as its well-known propensity to substantially alter structure upon unloading in mechanical testing makes it difficult to understand and thus to simulate correlation between microstructures observed in post-mortem analysis and physical processes during testing or fabrication. However, recent advances in in-situ analysis based on large-scale research facilities such as neutron scattering and synchrotron radiation sources as well as microscopy-based, acoustic emission, and other more traditional techniques allowed significant achievements. Apart from apparent development of relevant experimental techniques, a significant part of this success should also be attributed to increasing accessibility of the facilities and simplification of their use from a user perspective. The selection of articles in this

  18. Superconducting InSb nanowire devices

    NARCIS (Netherlands)

    Szombati, D.B.

    2017-01-01

    Josephson junctions form a two-level system which is used as a building block for many types of superconducting qubits. Junctions fabricated from semiconducting nanowires are gate-tunable and offer electrostatically adjustable Josephson energy, highly desirable in qubit architecture. Studying

  19. Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb

    Directory of Open Access Journals (Sweden)

    R. Pässler

    2013-08-01

    Full Text Available Characteristic non-Debye behaviors of low-temperature heat capacities of GaP, GaAs, GaSb, InP, InAs, and InSb, which are manifested above all in form of non-monotonic behaviors (local maxima of the respective Cp(T/T3 curves in the cryogenic region, are described by means of a refined version of a recently proposed low-to-high-temperature interpolation formula of non-Debye type. Least-mean-square fittings of representative Cp(T data sets available for these materials from several sources show excellent agreements, from the liquid-helium region up to room temperature. The results of detailed calculations of the respective material-specific Debye temperature curves, ΘD(T, are represented in graphical form. The strong, non-monotonic variations of ΘD(T values confirm that it is impossible to provide reasonable numerical simulations of measured Cp(T dependences in terms of fixed Debye temperatures. We show that it is possible to describe in good approximation the complete Debye temperature curves, from the cryogenic region up to their definitive disappearance (dropping to 0 in the high temperature region, by a couple of unprecedented algebraic formulas. The task of constructing physically adequate prolongations of the low-temperature Cp(T curves up to melting points was strongly impeded by partly rather large differences (up to an order of 10 J/(K·mol between the high-temperature data sets presented in different research papers and/or data reviews. Physically plausible criteria are invoked, which enabled an a priori rejection of a series of obviously unrealistic high-temperature data sets. Residual uncertainties for GaAs and InAs could be overcome by re-evaluations of former enthalpy data on the basis of a novel set of properly specified four-parameter polynomial expressions applying to large regions, from moderately low temperatures up to melting points. Detailed analytical and numerical descriptions are given for the anharmonicity

  20. A study of probabilistic fatigue crack propagation models in Mg Al Zn alloys under different specimen thickness conditions by using the residual of a random variable

    International Nuclear Information System (INIS)

    Choi, Seon Soon

    2012-01-01

    The primary aim of this paper was to evaluate several probabilistic fatigue crack propagation models using the residual of a random variable, and to present the model fit for probabilistic fatigue behavior in Mg Al Zn alloys. The proposed probabilistic models are the probabilistic Paris Erdogan model, probabilistic Walker model, probabilistic Forman model, and probabilistic modified Forman models. These models were prepared by applying a random variable to the empirical fatigue crack propagation models with these names. The best models for describing fatigue crack propagation models with these names. The best models for describing fatigue crack propagation models with these names. The best models for describing fatigue crack propagation models with these names. The best models vor describing fatigue crack propagation behavior in Mg Al Zn alloys were generally the probabilistic Paris Erdogan and probabilistic Walker models. The probabilistic Forman model was a good model only for a specimen with a thickness of 9.45mm

  1. Role of 3d-ions for radiation defect production in MgO and MgAl2O4

    International Nuclear Information System (INIS)

    Mironova, N.A.; Grinvald, G.A.; Skvortsova, V.N.

    1985-01-01

    Optical properties of MgO and MgAl 2 O 4 crystals containing chromium and manganese impurity ions were studied by exposure to but all types of radiation. Complicated defects of the ''impurity-intrinsic matrix defect'' type were preferably considered. It has been shown that different symmetry center forming chromium ions in MgO:Crsup(3+) change their valency with various efficiency being exposed to external action. Besides, the compensating vacancy does not participate in the hole center formation. For MgOxAl 2 O 3 single crystals the presence of octahedrally coordinated manganese ions suppresses the hole center creation by gamma-irradiation. Studying luminescence spectra of Crsup(3+) ions in MgAl 2 O 4 it has been states that neutron irradiation increases the degree of inversion for the magnesium-aluminium spinel

  2. Nanocavity formation processes in MgO(1 0 0) by light ion (D, He, Li) and heavy ion (Kr, Cu, Au) implantation

    International Nuclear Information System (INIS)

    Veen, A. van; Huis, M.A. van; Fedorov, A.V.; Schut, H.; Labohm, F.; Kooi, B.J.; Hosson, J.Th.M. de

    2002-01-01

    In studies on the controlled growth of metallic precipitates in MgO it is attempted to use nanometer size cavities as precursors for formation of metallic precipitates. In MgO nanocavities can easily be generated by light gas ion bombardment at room temperature with typically 30 keV ion energy to a dose of 10 16 cm -2 , followed by annealing to 1300 K. It has been shown earlier by transmission electron microscopy (TEM) that the cavities (thickness 2-3 nm and length/width 5-10 nm) have a perfectly rectangular shape bounded by {1 0 0} faces. The majority of the gas has been released at this temperature and the cavities are stable until annealing at 1500 K. The depth location of the cavities and the implanted ions is monitored by positron beam analysis, neutron depth profiling, RBS/channeling and energy dispersive spectroscopy. The presence of metallic nanoprecipitates is detected by optical absorption measurements and by high-resolution XTEM. Surprisingly, all the metallic implants induce, in addition to metallic precipitates in a band at the mean ion range, small rectangular and cubic nanocavities. These are most clearly observed at a depth shallower than the precipitate band. In the case of gold the cavities are produced in close proximity to the crystal surface. The results indicate that in MgO vacancy clustering dominates over Frenkel-pair recombination. Results of molecular dynamics calculations will be used to discuss the observed defect recovery and clustering processes in MgO

  3. Nanocavity formation processes in MgO(1 0 0) by light ion (D, He, Li) and heavy ion (Kr, Cu, Au) implantation

    Energy Technology Data Exchange (ETDEWEB)

    Veen, A. van E-mail: avveen@iri.tudelft.nl; Huis, M.A. van; Fedorov, A.V.; Schut, H.; Labohm, F.; Kooi, B.J.; Hosson, J.Th.M. de

    2002-05-01

    In studies on the controlled growth of metallic precipitates in MgO it is attempted to use nanometer size cavities as precursors for formation of metallic precipitates. In MgO nanocavities can easily be generated by light gas ion bombardment at room temperature with typically 30 keV ion energy to a dose of 10{sup 16} cm{sup -2}, followed by annealing to 1300 K. It has been shown earlier by transmission electron microscopy (TEM) that the cavities (thickness 2-3 nm and length/width 5-10 nm) have a perfectly rectangular shape bounded by {l_brace}1 0 0{r_brace} faces. The majority of the gas has been released at this temperature and the cavities are stable until annealing at 1500 K. The depth location of the cavities and the implanted ions is monitored by positron beam analysis, neutron depth profiling, RBS/channeling and energy dispersive spectroscopy. The presence of metallic nanoprecipitates is detected by optical absorption measurements and by high-resolution XTEM. Surprisingly, all the metallic implants induce, in addition to metallic precipitates in a band at the mean ion range, small rectangular and cubic nanocavities. These are most clearly observed at a depth shallower than the precipitate band. In the case of gold the cavities are produced in close proximity to the crystal surface. The results indicate that in MgO vacancy clustering dominates over Frenkel-pair recombination. Results of molecular dynamics calculations will be used to discuss the observed defect recovery and clustering processes in MgO.

  4. Study of Ne and Kr production in Mg, Al, Rb, Sr and Y targets by 0-180 MeV neutrons. Cosmochemical application

    International Nuclear Information System (INIS)

    Bertin, P.

    1989-07-01

    High sensitivity mass spectrometry technique has been used to measure production of noble gases Ne and Kr induced by 0-180 MeV neutrons in Mg, Al, Rb, Sr and Y targets. This experiment allowed us an evaluation of the implied excitation functions, in an energy range where no experimental data were available. These results have exhibited the importance of secondary neutrons induced in the interaction of cosmic rays with meteorites and moon surface [fr

  5. Sp1/Sp3 and DNA-methylation contribute to basal transcriptional activation of human podoplanin in MG63 versus Saos-2 osteoblastic cells

    Directory of Open Access Journals (Sweden)

    Puri Christina

    2007-03-01

    Full Text Available Abstract Background Podoplanin is a membrane mucin that, among a series of tissues, is expressed on late osteoblasts and osteocytes. Since recent findings have focussed on podoplanin's potential role as a tumour progression factor, we aimed at identifying regulatory elements conferring PDPN promoter activity. Here, we characterized the molecular mechanism controlling basal PDPN transcription in human osteoblast-like MG63 versus Saos-2 cells. Results We cloned and sequenced 2056 nucleotides from the 5'-flanking region of the PDPN gene and a computational search revealed that the TATA and CAAT box-lacking promoter possesses features of a growth-related gene, such as a GC-rich 5' region and the presence of multiple putative Sp1, AP-4 and NF-1 sites. Reporter gene assays demonstrated a functional promoter in MG63 cells exhibiting 30-fold more activity than in Saos-2 cells. In vitro DNase I footprinting revealed eight protected regions flanked by DNaseI hypersensitive sites within the region bp -728 to -39 present in MG63, but not in Saos-2 cells. Among these regions, mutation and supershift electrophoretic mobility shift assays (EMSA identified four Sp1/Sp3 binding sites and two binding sites for yet unknown transcription factors. Deletion studies demonstrated the functional importance of two Sp1/Sp3 sites for PDPN promoter activity. Overexpression of Sp1 and Sp3 independently increased the stimulatory effect of the promoter and podoplanin mRNA levels in MG63 and Saos-2 cells. In SL2 cells, Sp3 functioned as a repressor, while Sp1 and Sp3 acted positively synergistic. Weak PDPN promoter activity of Saos-2 cells correlated with low Sp1/Sp3 nuclear levels, which was confirmed by Sp1/Sp3 chromatin immunoprecipitations in vivo. Moreover, methylation-sensitive Southern blot analyses and bisulfite sequencing detected strong methylation of CpG sites upstream of bp -464 in MG63 cells, but hypomethylation of these sites in Saos-2 cells. Concomitantly

  6. Positron annihilation 2D-ACAR study of semi-coherent Li nanoclusters in MgO(1 0 0) and MgO(1 1 0)

    International Nuclear Information System (INIS)

    Falub, C.V.; Mijnarends, P.E.; Eijt, S.W.H.; Huis, M.A. van; Veen, A. van; Schut, H.

    2002-01-01

    Depth selective positron annihilation two-dimensional angular correlation of annihilation radiation (2D-ACAR) is used to determine the electronic structure of Li nanoclusters formed by implantation of 10 16 cm -2 6 Li ions (with an energy of 30 keV) in MgO(1 0 0) and (1 1 0) crystals, and subsequently annealed at 950 K. The 2D-ACAR spectra of Li-implanted MgO obtained with 4 keV positrons reveal the semi-coherent ordering state of the embedded metallic Li nanoclusters. The results agree with ab initio Korringa-Kohn-Rostoker calculations

  7. Positron annihilation 2D-ACAR study of semi-coherent Li nanoclusters in MgO(1 0 0) and MgO(1 1 0)

    Energy Technology Data Exchange (ETDEWEB)

    Falub, C.V. E-mail: c.falub@iri.tudelft.nl; Mijnarends, P.E.; Eijt, S.W.H.; Huis, M.A. van; Veen, A. van; Schut, H

    2002-05-01

    Depth selective positron annihilation two-dimensional angular correlation of annihilation radiation (2D-ACAR) is used to determine the electronic structure of Li nanoclusters formed by implantation of 10{sup 16} cm{sup -2} {sup 6}Li ions (with an energy of 30 keV) in MgO(1 0 0) and (1 1 0) crystals, and subsequently annealed at 950 K. The 2D-ACAR spectra of Li-implanted MgO obtained with 4 keV positrons reveal the semi-coherent ordering state of the embedded metallic Li nanoclusters. The results agree with ab initio Korringa-Kohn-Rostoker calculations.

  8. Positron annihilation 2D-ACAR study of semi-coherent Li nanoclusters in MgO( 1 0 0 ) and MgO( 1 1 0 )

    Science.gov (United States)

    Falub, C. V.; Mijnarends, P. E.; Eijt, S. W. H.; van Huis, M. A.; van Veen, A.; Schut, H.

    2002-05-01

    Depth selective positron annihilation two-dimensional angular correlation of annihilation radiation (2D-ACAR) is used to determine the electronic structure of Li nanoclusters formed by implantation of 10 16 cm -26Li ions (with an energy of 30 keV) in MgO(1 0 0) and (1 1 0) crystals, and subsequently annealed at 950 K. The 2D-ACAR spectra of Li-implanted MgO obtained with 4 keV positrons reveal the semi-coherent ordering state of the embedded metallic Li nanoclusters. The results agree with ab initio Korringa-Kohn-Rostoker calculations.

  9. Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

    2010-01-01

    Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

  10. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

    Science.gov (United States)

    Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

    2018-05-01

    Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

  11. Effect of Magnesium Content and Processing Conditions on Phase Formation and Stability in Mg2+ δ Si0.3Sn0.7

    Science.gov (United States)

    Goyal, Gagan K.; Dasgupta, T.

    2018-03-01

    Mg2+ δ Si0.3Sn0.7 compositions with nominal Mg content of δ = 0, 0.2 are synthesized using a single-step quartz tube reaction method with different heating rates and holding times. The resulting powders are sintered using a uniaxial induction hot press under similar conditions to produce near-dense compacts. The effect of Mg content and processing conditions on the phase formation and its stability are studied using x-ray diffraction measurements, scanning electron microscopy (SEM) with elemental mapping and compositional analysis using energy dispersive spectroscopy (EDS). Results indicate that with sufficient Mg content and shorter synthesis time, the powder remains single phasic; however, prolonged heat treatment during synthesis results in Mg loss and causes the system to become biphasic. Compaction results in single-phase formation in all the specimens. This is attributed to the removal of the low-melting secondary Sn-rich phases present in the system. The decomposition of the specimens depends on the Mg content after the compaction step with a δ around - 0.15 necessary to preserve the single phase. The decomposition also results in Mg enrichment of the matrix (due to formation of elemental Sn), thereby acting as a self-healing mechanism. Annealing the dense products at 773 K for 24 h in static vacuum is carried out. Progressive Mg loss is observed resulting in degradation of the specimen.

  12. Caryophyllene oxide exhibits anti-cancer effects in MG-63 human osteosarcoma cells via the inhibition of cell migration, generation of reactive oxygen species and induction of apoptosis

    Directory of Open Access Journals (Sweden)

    Zheng Pan

    2016-12-01

    Full Text Available The main objective of the present study was to evaluate the antitumor and apoptotic effects of caryophyllene oxide in MG-63 human osteosarcoma cells. Cell viability of these cells was evaluated by MTT assay while as in vitro wound healing assay was used to study the effect of caryophyllene oxide on cell migration. Fluorescence microscopy and transmission electron microscopy were used to study the changes in cell morphology once the cells undergo apoptosis. Caryophyllene oxide significantly led to cytotoxicity in MG-63 cells showing dose-dependent as well as time-dependent effects. Caryophyllene oxide led to an inhibition of wound closure significantly. At caryophyllene oxide doses of 20, 80 and 120 µM, the percentage of cell migration was shown to be 94.2, 67.1 and 14.8% respectively. With an increase in the caryophyllene oxide dose, the extent of apoptosis also increased characterized by cellular shrinkage, membrane blebbing, chromatin condensation and apoptotic body formation.

  13. Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping

    Science.gov (United States)

    Dou, S. X.; Pan, A. V.; Zhou, S.; Ionescu, M.; Wang, X. L.; Horvat, J.; Liu, H. K.; Munroe, P. R.

    2003-08-01

    We investigated the effect of SiC nanoparticle doping on the crystal lattice structure, critical temperature Tc, critical current density Jc, and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)x/2 samples with x=0-1.0 were fabricated using an in situ reaction process. The contraction of the lattice and depression of Tc with increasing SiC doping level remained rather small most likely due to the counterbalancing effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intragrain defects and highly dispersed nanoinclusions within the grains which can act as effective pinning centers for vortices, improving Jc behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)x/2 superconductors.

  14. Patch test concentrations (doses in mg/cm(2) ) for the 12 non-mix fragrance substances regulated by European legislation

    DEFF Research Database (Denmark)

    Bruze, Magnus; Svedman, Cecilia; Andersen, Klaus Ejner

    2012-01-01

    Background. According to EU legislation, 26 fragrance substance allergens must be labelled on cosmetic products. For 12 of them, the optimal patch test concentration/dose has not been evaluated. Objectives. To establish the optimal patch test doses in mg/cm(2) for the 12 fragrance substances......, it is recommended that half of the maximum patch test dose (mg/cm(2) ) be used for aimed and screening patch testing....... that are not included in fragrance mix I or II in the European baseline patch test series. Materials and Methods. Patch testing with the 12 fragrance substances was performed in a stepwise manner encompassing up to five rounds in at least 100 dermatitis patients for each round. Before patch testing, an individual...

  15. Comparison between nano-diamond and carbon nanotube doping effects on critical current density and flux pinning in MgB2

    International Nuclear Information System (INIS)

    Cheng, C H; Yang, Y; Munroe, P; Zhao, Y

    2007-01-01

    Doping effects of nano-diamond and carbon nanotubes (CNTs) on critical current density of bulk MgB 2 have been studied. CNTs are found prone to be doped into the MgB 2 lattice whereas nano-diamond tends to form second-phase inclusions in the MgB 2 matrix, leading to a more significant improvement of J c (H) by doping by nano-diamond than by CNTs in MgB 2 . TEM reveals tightly packed MgB 2 nanograins (50-100 nm) with a dense distribution of diamond nanoparticles (10-20 nm) inside MgB 2 grains in nano-diamond-doped samples. Such a unique microstructure leads to a flux pinning behaviour different from that in CNTs-doped MgB 2

  16. Differential electron scattering cross sections for the 3 (2)S to 3 (2)P0 h, k transitions in Mg II - Comparison of experiment and theory

    Science.gov (United States)

    Williams, I. D.; Chutjian, A.; Msezane, A. Z.; Henry, R. J. W.

    1985-01-01

    Angular differential electron scattering cross sections are reported for the unresolved inelastic 3s (2)S to 3p (2)P0 h, k transitions in Mg II for the first time. Relative differential cross sections have been measured at 35 eV and 50 eV in the angular range of Theta between 6 and 17 deg using the newly developed electron energy loss technique in a crossed electron-ion beam geometry. Theoretical values have been calculated in a five-state close-coupling approximation in which 3s, 3p, 3d, 4s, and 4p states were included, and to which measurements were normalized at Theta = 12 deg.

  17. Ionizing radiation effects in MgAl sub 2 O sub 4. Efecto de la radiacion ionizante en MgAl2 O4

    Energy Technology Data Exchange (ETDEWEB)

    Ibarra, A.

    1990-11-01

    The effect of ionizing radiation in MgAl{sub 2}O{sub 4} has been studied, paying special interest to the influence of the high concentration of intrinsic defects of this material. Optical absorption, ESR, photoluminescence, radioluminescence, and thermoluminescence are the main techniques used. The ionizing radiation induces formation of V centres. During the work its characteristics (structure, thermal stability, absorption spectra, etc.) has been studied. The thermoluminescence spectra allowed the discovery of several charge release processes between 85 and 650 K, all of them associated to electron release. The V-centres and several impurities (Cr, Mn,...) appear as recombination centres. The obtained data show that the kinetic of these charge release processes is regulated by the presence of a point defect with a very high concentration. This defect is an electron trap and its structure is an Al ion in a lattice site of tetrahedral symmetry. (Author)

  18. CO{sub 2} capture in Mg oxides doped with Fe and Ni; Captura de CO{sub 2} en oxidos de Mg dopados con Fe y Ni

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez S, I. F.

    2016-07-01

    In this work the CO{sub 2} capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe{sub 2}O{sub 3} phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO{sub 2} in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO{sub 2} capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO{sub 2} capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO{sub 2} capture. The different stages

  19. Pressure-induced structural change in MgSiO3 glass at pressures near the Earth's core-mantle boundary.

    Science.gov (United States)

    Kono, Yoshio; Shibazaki, Yuki; Kenney-Benson, Curtis; Wang, Yanbin; Shen, Guoyin

    2018-02-20

    Knowledge of the structure and properties of silicate magma under extreme pressure plays an important role in understanding the nature and evolution of Earth's deep interior. Here we report the structure of MgSiO 3 glass, considered an analog of silicate melts, up to 111 GPa. The first (r1) and second (r2) neighbor distances in the pair distribution function change rapidly, with r1 increasing and r2 decreasing with pressure. At 53-62 GPa, the observed r1 and r2 distances are similar to the Si-O and Si-Si distances, respectively, of crystalline MgSiO 3 akimotoite with edge-sharing SiO 6 structural motifs. Above 62 GPa, r1 decreases, and r2 remains constant, with increasing pressure until 88 GPa. Above this pressure, r1 remains more or less constant, and r2 begins decreasing again. These observations suggest an ultrahigh-pressure structural change around 88 GPa. The structure above 88 GPa is interpreted as having the closest edge-shared SiO 6 structural motifs similar to those of the crystalline postperovskite, with densely packed oxygen atoms. The pressure of the structural change is broadly consistent with or slightly lower than that of the bridgmanite-to-postperovskite transition in crystalline MgSiO 3 These results suggest that a structural change may occur in MgSiO 3 melt under pressure conditions corresponding to the deep lower mantle.

  20. CO2 Absorption and Magnesium Carbonate Precipitation in MgCl2–NH3–NH4Cl Solutions: Implications for Carbon Capture and Storage

    Directory of Open Access Journals (Sweden)

    Chen Zhu

    2017-09-01

    Full Text Available CO2 absorption and carbonate precipitation are the two core processes controlling the reaction rate and path of CO2 mineral sequestration. Whereas previous studies have focused on testing reactive crystallization and precipitation kinetics, much less attention has been paid to absorption, the key process determining the removal efficiency of CO2. In this study, adopting a novel wetted wall column reactor, we systematically explore the rates and mechanisms of carbon transformation from CO2 gas to carbonates in MgCl2–NH3–NH4Cl solutions. We find that reactive diffusion in liquid film of the wetted wall column is the rate-limiting step of CO2 absorption when proceeding chiefly through interactions between CO2(aq and NH3(aq. We further quantified the reaction kinetic constant of the CO2–NH3 reaction. Our results indicate that higher initial concentration of NH4Cl ( ≥ 2 mol · L − 1 leads to the precipitation of roguinite [ ( NH 4 2 Mg ( CO 3 2 · 4 H 2 O ], while nesquehonite appears to be the dominant Mg-carbonate without NH4Cl addition. We also noticed dypingite formation via phase transformation in hot water. This study provides new insight into the reaction kinetics of CO2 mineral carbonation that indicates the potential of this technique for future application to industrial-scale CO2 sequestration.

  1. The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Suzuki, Yoshishige [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

    2016-08-28

    The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

  2. Electronic structure and orientation relationship of Li nanoclusters embedded in MgO studied by depth-selective positron annihilation two-dimensional angular correlation

    Science.gov (United States)

    Falub, C. V.; Mijnarends, P. E.; Eijt, S. W.; van Huis, M. A.; van Veen, A.; Schut, H.

    2002-08-01

    Quantum-confined positrons are sensitive probes for determining the electronic structure of nanoclusters embedded in materials. In this work, a depth-selective positron annihilation 2D-ACAR (two-dimensional angular correlation of annihilation radiation) method is used to determine the electronic structure of Li nanoclusters formed by implantation of 1016-cm-2 30-keV 6Li ions in MgO (100) and (110) crystals and by subsequent annealing at 950 K. Owing to the difference between the positron affinities of lithium and MgO, the Li nanoclusters act as quantum dots for positrons. 2D-ACAR distributions for different projections reveal a semicoherent fitting of the embedded metallic Li nanoclusters to the host MgO lattice. Ab initio Korringa-Kohn-Rostoker calculations of the momentum density show that the anisotropies of the experimental distributions are consistent with an fcc crystal structure of the Li nanoclusters. The observed reduction of the width of the experimental 2D-ACAR distribution is attributed to positron trapping in vacancies associated with Li clusters. This work proposes a method for studying the electronic structure of metallic quantum dots embedded in an insulating material.

  3. Patch test concentrations (doses in mg/cm2 ) for the 12 non-mix fragrance substances regulated by European legislation.

    Science.gov (United States)

    Bruze, Magnus; Svedman, Cecilia; Andersen, Klaus Ejner; Bruynzeel, Derk; Goossens, An; Johansen, Jeanne Duus; Matura, Mihaly; Orton, David; Vigan, Martine

    2012-03-01

    According to EU legislation, 26 fragrance substance allergens must be labelled on cosmetic products. For 12 of them, the optimal patch test concentration/dose has not been evaluated. To establish the optimal patch test doses in mg/cm2 for the 12 fragrance substances that are not included in fragrance mix I or II in the European baseline patch test series. Patch testing with the 12 fragrance substances was performed in a stepwise manner encompassing up to five rounds in at least 100 dermatitis patients for each round. Before patch testing, an individual maximum concentration/dose was determined for each fragrance substance. The predetermined maximum patch test concentrations/doses could be tested for all 12 fragrance substances, with no observable adverse reactions being noted. For each fragrance substance investigated, it is recommended that half of the maximum patch test dose (mg/cm2) be used for aimed and screening patch testing. © 2012 John Wiley & Sons A/S.

  4. Formation of long-period stacking ordered structures in Mg88M5Y7 (M = Ti, Ni and Pb) casting alloys

    International Nuclear Information System (INIS)

    Jin, Qian-Qian; Fang, Can-Feng; Mi, Shao-Bo

    2013-01-01

    Highlights: •Apart from 18R-LPSO, 14H-LPSO structure was determined in the Mg-Ni-Y alloys. •The appearance of twin-related structure in 18R-LPSO structure results from the stacking faults in the stacking sequence of the closely packed planes. •A new (Pb, Mg) 2 Y phase with a body-centered orthorhombic structure was determined in the Mg-Pb-Y alloy. •No LPSO structures were found in the Mg-Pb-Y and Mg-Ti-Y casting alloys. -- Abstract: Formation of long-period stacking ordered (LPSO) structures is investigated in Mg 88 M 5 Y 7 (M = Ti, Ni and Pb) casting alloys by means of electron microscopy and X-ray diffraction. In the Mg 88 Ni 5 Y 7 casting alloy, 14H-LPSO structure is observed in a small amount, which coexists with 18R-LPSO structure. The appearance of stacking faults in 18R-LPSO structure results in twin-related structure in the stacking sequence of the closely packed planes. A new (Pb, Mg) 2 Y phase with a body-centered orthorhombic structure is determined in the Mg 88 Pb 5 Y 7 alloy. No LPSO structures are found in the Mg 88 Pb 5 Y 7 and Mg 88 Ti 5 Y 7 casting alloys. In terms of the atomic radius and heat of mixing, the formation ability of LPSO structure in the present alloys is discussed

  5. Effect of H2O on Upper Mantle Phase Transitions in MgSiO3: is the Seismic X-discontinuity an Indicator of Mantle Water Content

    Energy Technology Data Exchange (ETDEWEB)

    S Jacobsen; Z Liu; T Boffa Ballaran; E Littlefield; L Ehm; R Hemley

    2011-12-31

    The mantle X-discontinuity, usually assigned to positive seismic velocity reflectors in the 260-330 km depth range, has proved difficult to explain in terms of a single mineralogical phase transformation in part because of its depth variability. The coesite to stishovite transition of SiO{sub 2} matches deeper X-discontinuity depths but requires 5-10% free silica in the mantle to match observed impedance contrast. The orthoenstatite (OEn) to high-pressure clinoenstatite (HPCen) transformation of MgSiO{sub 3} also broadly coincides with depths of the X but requires chemically depleted and orthoenstatite-rich lithology at 300 km depth in order to match observed seismic impedance contrast. On the basis of high-pressure infrared spectroscopy, X-ray diffraction, and Raman spectroscopy, we show that 1300 ppm variation of H{sub 2}O content in MgSiO{sub 3} can displace the transition of low-pressure clinoenstatite (LPCen) to HPCen by up to 2 GPa, similar to previous quench experiments on the OEn to HPCen phase transition, where about 30-45 km (1.0-1.5 GPa) of deflection could occur per 0.1 wt% H{sub 2}O. If the mantle X-discontinuity results from pyroxene transitions in a depleted harzburgite layer, because of the strong influence of minor amounts of water on the transformation boundary, the depth of the mantle X-discontinuity could serve as a potentially sensitive indicator of water content in the uppermantle.

  6. Critical current density in MgB2 bulk samples after co-doping with nano-SiC and poly zinc acrylate complexes

    International Nuclear Information System (INIS)

    Zhang, Z.; Suo, H.; Ma, L.; Zhang, T.; Liu, M.; Zhou, M.

    2011-01-01

    SiC and poly zinc acrylate complexes co-doped MgB 2 bulk has been synthesized. Co-doping can cause higher carbon substitutions and the second phase particles. Co-doping can further increase the Jc value of MgB 2 bulk on the base of the SiC doping. The co-doped MgB 2 bulk samples have been synthesized using an in situ reaction processing. The additives is 8 wt.% SiC nano powders and 10 wt.% [(CH 2 CHCOO) 2 Zn] n poly zinc acrylate complexes (PZA). A systematic study was performed on samples doped with SiC or PZA and samples co-doped with both of them. The effects of doping and co-doping on phase formation, microstructure, and the variation of lattice parameters were studied. The amount of substituted carbon, the critical temperature (T c ) and the critical current density (J c ) were determined. The calculated lattice parameters show the decrease of the a-axis, while no obvious change was detected for c-axis parameter in co-doped samples. This indicates that the carbon was substituted by boron in MgB 2 . The amount of substituted carbon for the co-doped sample shows an enhancement compared to that of the both single doped samples. The co-doped samples perform the highest J c values, which reaches 3.3 x 10 4 A/cm 2 at 5 K and 7 T. It is shown that co-doping with SiC and organic compound is an effective way to further improve the superconducting properties of MgB 2 .

  7. Point defect states in Sb-doped germanium

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Neil S., E-mail: neilp@mit.edu; Monmeyran, Corentin, E-mail: comonmey@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Agarwal, Anuradha [Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Kimerling, Lionel C. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2015-10-21

    Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E{sub 37}, E{sub 30}, E{sub 22}, and E{sub 21}) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E{sub 37} is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10{sup 11 }cm{sup −3} Mrad{sup −1} for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E{sub 22}, E{sub 21}, and E{sub 30} indicate that E{sub 22} likely contains two interstitials.

  8. Electrical switching in Sb doped Al23Te77 glasses

    Science.gov (United States)

    Pumlianmunga; Ramesh, K.

    2017-08-01

    Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

  9. Experimental research on electric field jump in low magnetic fields: Detection of damage in new ex-situ MgB{sub 2} barriers in MgB{sub 2} wires

    Energy Technology Data Exchange (ETDEWEB)

    Gajda, D., E-mail: dangajda@op.pl [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 53-421 Wroclaw (Poland); Morawski, A. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warszawa (Poland); Zaleski, A. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wroclaw (Poland); Hossain, M.S.A. [Institute for Superconducting and Electronic Materials, AIIM, University of Wollongong, North Wollongong, NSW 2519 (Australia); Rindfleisch, M. [Hyper Tech Research, Inc, 1275 Kinnear Road, Columbus, OH 43212 (United States); Cetner, T. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warszawa (Poland)

    2015-10-25

    We explored the incorporation of field sweep (constant current and rapidly increasing magnetic field) into the four-probe method as a new technique to detect defects in barrier layers in superconducting MgB{sub 2} wires. This method allows us to observe jumps in the electric field in low magnetic fields. The scanning electron microscopy results indicate that such a jump originates from cracks in Nb barriers and ex-situ MgB{sub 2} barriers. Our research indicates that the field sweep allows us to detect damage to barriers that are made of superconducting materials. This method can be the basis for an industrial method for detecting damages in MgB{sub 2} wires. These defects reduce the critical current of MgB{sub 2} wire. Detection and removal of these defects will allow us to produce MgB{sub 2} wires with ex-situ MgB{sub 2} and Nb barriers that will have improved critical current density. Manufacturing of MgB{sub 2} wires with new ex-situ MgB{sub 2} barriers is a new technological concept. This type of barrier is cheaper and easier to manufacture, leading to cheaper MgB{sub 2} wires. Moreover, we show that critical current can be measured by two methods: current sweep (constant magnetic field and quickly increasing current) and field sweep. - Graphical abstract: Our results indicate that the jump electric field low magnetic fields. This jump indicates damage in Nb and ex situ MgB{sub 2} barrier. Detection and removal of defects will increase J{sub c} in MgB{sub 2} wires and will increase the applicability of MgB{sub 2} wire. - Highlights: • Jump electric field in the 1 T indicates damage to the Nb barrier. • Jump resistance at 9 K indicates damage to the Nb barrier. • Jump electric field in low magnetic field indicates damage to ex situ MgB{sub 2} barrier. • Damage Nb and ex situ MgB{sub 2} barrier significantly reduces the critical current density in the MgB{sub 2} wire.

  10. Optical absorption and thermoluminescence in Mg O, Mg O:Ni and Mg O:Li irradiated at room temperature; Absorcion optica y termoluminiscencia en MgO, MgO:Ni y MgO:Li irradiados a temperatura ambiente

    Energy Technology Data Exchange (ETDEWEB)

    Delgado, L

    1984-07-01

    Optical absorption and thermoluminescence (TL) studies in Mg O, Mg O:Ni and Mg O:Li irradiated at room temperature are presented. In pure Mg O the thermal annihilation of Fe3+ by recombination with thermally released electrons at {approx} 90 and 175 degree centigree and the V center annealing by hole release up to 100 degree centigree cause the observed glow peaks at these temperatures. The TL excitation spectrum shows two maxima at 245 nm (electron center) and 288 nm (Fe3+). In Mg O:Ni X irradiation induces Fe{sup 2}+ {yields}- Fe{sup 3}+ and Ni{sup 2}+ {yields} Ni{sup 3}+ oxidations. Two TL emission bands centered at 110 degree centigree (red) and 80 o{sup C} (green) are assigned to electron release and their recombination at Fe{sup 3}+ and Ni{sup 3}+ respectively. In Mg O:Li two TL emission bands, one blue (430 nm) and the other red (730 nm) with excitation maxima at 245 nm (electron center) and 200 nm (hole center) respectively are observed. No V-center formation was detected in both Ni and Li doped samples. (Author) 42 refs.

  11. Vapor Pressure of Antimony Triiodide

    Science.gov (United States)

    2017-12-07

    unlimited. iii Contents List of Figures iv 1. Introduction 1 2. Vapor Pressure 1 3. Experiment 3 4. Discussion and Measurements 5 5...SbI3 as a function of temperature ......................... 6 Approved for public release; distribution is unlimited. 1 1. Introduction ...single-crystal thin films of n-type (Bi,Sb)2(Te,Se)3 materials presents new doping challenges because it is a nonequilibrium process. (Bi,Sb)2(Te,Se)3

  12. Thermoluminescence of the Z centre in Mg-doped KCl

    International Nuclear Information System (INIS)

    Kamavisdar, V.S.; Deshmukh, B.T.

    1980-01-01

    Optical absorption and thermoluminescence measurements on KCl:Mg 2+ are reported. Bleaching in F band introduces a new glow peak at 406 K in the glow curves. A similar peak is observed in microcrystalline powders. When this peak is thermally cleaned, the broadening of the absorption observed in prolonged F bleached crystals is removed. On the basis of these observations, the glow peak at 406 K is tentatively attributed to Z 1 centres. The glow peak at 394 K observed in microcrystalline powders is attributed to a combined effect of deformation and Z 1 centres. (author)

  13. Characterization of the microstructure in Mg based alloy

    KAUST Repository

    Kutbee, Arwa T

    2013-01-01

    hardening is essential for age hardenable Mg-based alloys. In this work, microstructural investigation of the Mg–1.4Sn–1.3Zn–0.1Mn (at.%) precipitation system was performed using TEM. The chemical composition of the precipitates was analyzed using EDS. APT

  14. Interatomic forces and bonding mechanisms in MgO clusters

    International Nuclear Information System (INIS)

    Wright, N.F.; Painter, G.S.

    1990-01-01

    We report results from a first-principles local spin density quantum mechanical study of the energetics and elastic properties of a series of magnesium-oxygen clusters of various morphologies. The role of quantum effects, e.g. covalency, in the bonding character of diatomic MgO is determined by comparison of classical and quantum restoring force curves. The dependence of binding properties on geometry and metal to oxygen ratio is determined by comparison of binding energy curves for a series of clusters. Results show that while gross features of the binding curves may be represented by simple interatomic potentials, details require the many body corrections of a full quantum treatment. 6 refs., 5 figs

  15. Calculation of relativistic and isotope shifts in Mg I

    International Nuclear Information System (INIS)

    Berengut, J.C.; Flambaum, V.V.; Kozlov, M.G.

    2005-01-01

    We present an ab initio method of calculation of the isotope and relativistic shifts in atoms with a few valence electrons. It is based on an energy calculation involving the combination of the configuration-interaction method and many-body perturbation theory. This work is motivated by analyses of quasar absorption spectra that suggest that the fine-structure constant α was smaller at an early epoch. Relativistic shifts are needed to measure this variation of α, while isotope shifts are needed to resolve systematic effects in this study. The isotope shifts can also be used to measure isotopic abundances in gas clouds in the early universe, which are needed to study nuclear reactions in stars and supernovae and test models of chemical evolution. This paper shows that the isotope shift in magnesium can be calculated to very high precision using our method

  16. Catalysis and Downsizing in Mg-Based Hydrogen Storage Materials

    Directory of Open Access Journals (Sweden)

    Jianding Li

    2018-02-01

    Full Text Available Magnesium (Mg-based materials are promising candidates for hydrogen storage due to the low cost, high hydrogen storage capacity and abundant resources of magnesium for the realization of a hydrogen society. However, the sluggish kinetics and strong stability of the metal-hydrogen bonding of Mg-based materials hinder their application, especially for onboard storage. Many researchers are devoted to overcoming these challenges by numerous methods. Here, this review summarizes some advances in the development of Mg-based hydrogen storage materials related to downsizing and catalysis. In particular, the focus is on how downsizing and catalysts affect the hydrogen storage capacity, kinetics and thermodynamics of Mg-based hydrogen storage materials. Finally, the future development and applications of Mg-based hydrogen storage materials is discussed.

  17. Aberrant tropoelastin secretion in MG-63 human osteosarcoma cells

    International Nuclear Information System (INIS)

    Curtiss, S.W.

    1989-01-01

    The secretion of newly synthesized tropoelastin, the soluble precursor of the extracellular matrix protein elastin, is not well understood. MG-63 human osteosarcoma cells were found by immunoblot analysis to synthesize 62 kD and 64 kD tropoelastins. Media from 63 cells labelled for five hours with [ 3 H]-valine contain no detectable tropoelastin, unlike media from other tropoelastin-synthesizing cells. Immunoblots of conditioned media and 1Ox-concentrated conditioned media left on the cells for six days also show an absence of tropoelastin from the cell media. No insoluble elastin is associated with the cell layer, as determined by amino acid analysis and electron microscopy of 18-21 day cell cultures. The absence of tropoelastin from the cell medium and elastin from the extracellular matrix indicates that MG63 cells do not secrete tropoelastin as expected, but accumulate it intracellularly. This accumulation is transient: immunoblots and immunofluorescence microscopy show that cells three days after passage have the highest steady-state levels of tropoelastin per cell, that day 8 cells contain lower but still significant amounts of tropoelastin, and that by day 22 tropoelastin is no longer present in the cell cultures. Cell density is a critical factor in the observed pattern of tropoelastin expression. Cells seeded at ten fold their usual initial density have high tropoelastin levels at one day after passage, sooner than cells seeded normally. Tropoelastin also disappears from high density-seeded cells more quickly and is no longer detectable at day 10. Lysosome-like vesicles containing membranous structures appear by immunoelectron microscopy to be the primary site of intracellular tropoelastin localization

  18. Search for C+ C clustering in Mg ground state

    Indian Academy of Sciences (India)

    2017-01-04

    Jan 4, 2017 ... Finite-range knockout theory predictions were much larger for (12C,212C) reaction, indicating a very small 12C−12C clustering in 24Mg. (g.s.) . Our present results contradict most of the proposed heavy cluster (12C+12C) structure models for the ground state of 24Mg. Keywords. Direct nuclear reactions ...

  19. Luminescence of color centers in MgF2 crystals

    International Nuclear Information System (INIS)

    Vakhidov, Sh.A.; Nuritdinov, I.; Musaeva, M.A.

    1999-01-01

    The photoluminescence characteristics of the proper radiation color centers of the MgF 2 crystals are studied. The samples were irradiated by the 60 Co source γ-rays up to the dose 10 7 Gy. The bands with the maxima in the area of 420, 460, 550 and 620 nm were identified, which are excited correspondingly in the bands with the maxima of 370, 320, 410 and 480 nm

  20. Simulation of precipitation and strengthening in MG-RE alloys

    OpenAIRE

    Liu, Hong

    2017-01-01

    Magnesium - rare earth (Mg-RE) alloys have received considerable attention in the past decades for wider applications in the aerospace industry due to their relatively high strength and excellent creep resistance. Most rare-earth containing magnesium alloys, such as Mg-Y, Mg-Gd, and Mg-Y-Nd, are precipitation hardenable. A technical barrier to the wider applications of such alloys is the lack of a sufficiently large age hardening response. To further improve this response, an improved underst...

  1. Theoretical Limiting Potentials in Mg/O2 Batteries

    DEFF Research Database (Denmark)

    Smith, Jeffrey G.; Naruse, Junichi; Hiramatsu, Hidehiko

    2016-01-01

    A rechargeable battery based on a multivalent Mg/O2 couple is an attractive chemistry due to its high theoretical energy density and potential for low cost. Nevertheless, metal-air batteries based on alkaline earth anodes have received limited attention and generally exhibit modest performance....... In addition, many fundamental aspects of this system remain poorly understood, such as the reaction mechanisms associated with discharge and charging. The present study aims to close this knowledge gap and thereby accelerate the development of Mg/O2 batteries by employing first-principles calculations...... by the presence of large thermodynamic overvoltages. In contrast, MgO2-based cells are predicted to be much more efficient: superoxide-terminated facets on MgO2 crystallites enable low overvoltages and round-trip efficiencies approaching 90%. These data suggest that the performance of Mg/O2 batteries can...

  2. Lithium ion implantation effects in MgO (100)

    NARCIS (Netherlands)

    van Huis, MA; Fedorov, AV; van Veen, A; Labohm, F; Schut, H; Mijnarends, PE; Kooi, BJ; De Hosson, JTM; Triftshauser, W; Kogel, G; Sperr, P

    2001-01-01

    Single crystals of MgO (100) were implanted with 10(16) (6)Li ions cm(-2) at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical

  3. Metastable self-trapping of positrons in MgO

    Science.gov (United States)

    Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

    1997-01-01

    Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

  4. Lithium ion implantation effects in MgO(100)

    Energy Technology Data Exchange (ETDEWEB)

    Huis, M.A. van; Fedorov, A.V.; Veen, A. van; Labohm, F.; Schut, H.; Mijnarends, P.E. [Interfaculty Reactor Inst., Delft Univ. of Technology, Delft (Netherlands); Kooi, B.J.; Hosson, J.T.M. de [Rijksuniversiteit Groningen (Netherlands). Materials Science Centre

    2001-07-01

    Single crystals of MgO(100) were implanted with 10{sup 16} {sup 6}Li ions cm{sup -2} at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical absorption spectroscopy and depth-sensitive Doppler Broadening positron beam analysis (PBA). A strong increase in the S-parameter is observed in the implantation layer at a depth of approximately 100 nm. The high value of the S-parameter is ascribed to positron annihilation in small lithium precipitates. The results of 2D-ACAR and X-TEM analysis show evidence of the presence of lithium precipitates. The depth distribution of the implanted {sup 6}Li atoms was monitored with neutron depth profiling (NDP). It was observed that detrapping and diffusion of {sup 6}Li starts at an annealing temperature of 1200K. (orig.)

  5. Lithium ion implantation effects in MgO(100)

    International Nuclear Information System (INIS)

    Huis, M.A. van; Fedorov, A.V.; Veen, A. van; Labohm, F.; Schut, H.; Mijnarends, P.E.; Kooi, B.J.; Hosson, J.T.M. de

    2001-01-01

    Single crystals of MgO(100) were implanted with 10 16 6 Li ions cm -2 at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical absorption spectroscopy and depth-sensitive Doppler Broadening positron beam analysis (PBA). A strong increase in the S-parameter is observed in the implantation layer at a depth of approximately 100 nm. The high value of the S-parameter is ascribed to positron annihilation in small lithium precipitates. The results of 2D-ACAR and X-TEM analysis show evidence of the presence of lithium precipitates. The depth distribution of the implanted 6 Li atoms was monitored with neutron depth profiling (NDP). It was observed that detrapping and diffusion of 6 Li starts at an annealing temperature of 1200K. (orig.)

  6. Characterization of the microstructure in Mg based alloy

    KAUST Repository

    Kutbee, Arwa T

    2013-06-01

    The cast products Mg–Sn based alloys are promising candidates for automobile industries, since they provide a cheap yet thermally stable alternative to existing alloys. One drawback of the Mg–Sn based alloys is their insufficient hardness. The hardenability can be improved by engineering the microstructure through additions of Zn to the base alloy and selective aging conditions. Therefore, detailed knowledge about the microstructural characteristics and the role of Zn to promote precipitation hardening is essential for age hardenable Mg-based alloys. In this work, microstructural investigation of the Mg–1.4Sn–1.3Zn–0.1Mn (at.%) precipitation system was performed using TEM. The chemical composition of the precipitates was analyzed using EDS. APT was employed to obtain precise chemical information on the distribution of Zn in the microstructure. It was found from microstructural studies that different precipitates with varying sizes and phases were present; lath-shaped precipitates of the Mg2Sn phase have an incoherent interface with the matrix, unlike the lath-shaped MgZn2 precipitates. Furthermore, nano-sized precipitates dispersed in the microstructure with short-lath morphology can either be enriched with Sn or Zn. On the other hand, APT analysis revealed the strong repulsion between Sn and Zn atoms in a portion of the analysis volume. However, larger reconstruction volume required to identify the role of Zn is still limited to the optimization of specimen preparation.

  7. Unconventional conventional superconductivity in MgB2

    Science.gov (United States)

    Mazin, Igor

    2002-03-01

    State-of-the-art numerical estimates of the electron-phonon coupling (EPC) constant are of the order of 0.8, which is just a little too low for Tc=39 K. Furthermore, there are indication that this conventional picture faces some problems: (a) specific heat suggests EPC even smaller that the calculatons (b) there is evidence of a gap smaller than 3.5 Tc, and of more than one gap (c) Low-temperature thermodynamics disagrees with the simple BCS picture. There are also theoretical indications of interesting deviations from the standard Eliashberg theory: (1) most of the coupling comes from interaction of just two phonons with two (out of four) bands. (2) The phonons in question are strongly anharmonic (3) Very unusually, nonlinear coupling of these phonons with electrons (i.e., two-phonon exchange) is stronger that the linear coupling. (4) Calculations predict two considerably different order parameters for the two sets of bands. This multigap scenario explains naturally a number of puzzling experiments, but seems to be at odds with the lack of any correlation between the residual resistivity and Tc. One can reconcile these, though, if the defect scattering occurs primarily in the intraband channels. This is supported by chemical arguments and by recent optical experiments. Furthermore, the hypothesis of two qualitatively different scattering rates for the two types of bands is consistent with a number of otherwise hard to explain transport measurements.

  8. Investigation of pinning in MgB2 superconductors

    International Nuclear Information System (INIS)

    Mohammad, S.; Reissner, M.; Steiner, W.; Bauer, E.; Giovannini, M.

    2006-01-01

    Full text: The pinning behaviour of bulk MgB 2 superconductors is peculiar in many respects. Pinning seems to be stronger than in classical high T C materials and there seems to be no weak link problem in these compounds, giving hope to produce bulk samples and wires with current densities appropriate for technical applications. But, although many studies concerning the pinning behaviour in this compound appeared in recent years, the results are still contradictory. In the present work we present results of an investigation of the pinning behaviour by magnetic relaxation measurements of three MgB 2 samples: a pure one, a sample with 8 at% Al substitution and a sample with 10 wt% of SiC admixture. A comparison of different analyses methods is given. (author)

  9. Insulator layer formation in MgB2 SIS junctions

    International Nuclear Information System (INIS)

    Shimakage, H.; Tsujimoto, K.; Wang, Z.; Tonouchi, M.

    2005-01-01

    The dependence of current-voltage characteristics on thin film deposition conditions was investigated using MgB 2 /AlN/NbN SIS junctions. By increasing the substrate temperature in AlN insulator deposition, the current density decreased and the normal resistance increased. The results indicated that an additional insulator layer between the MgB 2 and AlN formed, either before or during the AlN deposition. The thickness of the additional insulator layer was increased with an increase in the AlN deposition temperature. From the dependence of current density on the thickness of AlN in low temperature depositions, the thickness of the additional insulator layer was estimated to be 1-1.5 nm when the AlN insulator was deposited from 0.14 to 0.7 nm. Moreover, with the current density of MgB 2 /AlN/MgB 2 SIS junctions, further insulator layer formation was confirmed

  10. Characterization of GaInSb crystal obtained by Czochralski Method

    International Nuclear Information System (INIS)

    Streicher, M.; Costa, E.M.; Dedavid, B.A.; Corregidor, V.; Franco, N.; Dias, M.; Alves, E.; Alves, L.C.

    2014-01-01

    The surface morphology and chemical composition of a Ga 0.93 In 0.07 Sb ternary alloy crystal grown by liquid encapsulated Czochralski were investigated by means of scanning electron microscope equipped with energy dispersive X-ray spectroscopy (SEM-EDX), particle induced X-ray emission (PIXE) and X-ray diffraction (XRD) techniques. Results indicate that poor mixing of the starting compounds during the synthesizing process lead to a ternary alloy with different compositions along the growth direction. Small regions with high concentrations of indium were highlighted throughout the crystal. Different parts removed from the crystal present similar microstructures with planar defects. Up to five different regions were identified in the sample. (author)

  11. Study of In distribution on GaInSb:Al crystals by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Streicher, M., E-mail: smorgana@gmail.com [Pontifícia Universidade Católica do Rio Grande do Sul, Av. Ipiranga, 6681, Porto Alegre, RS (Brazil); Instituto de Plasmas e Fusão Nuclear (IPFN), Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela LRS (Portugal); Corregidor, V.; Catarino, N. [Instituto de Plasmas e Fusão Nuclear (IPFN), Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela LRS (Portugal); Alves, L.C. [Centro de Ciências e Tecnologias Nucleares (C2TN), Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela LRS (Portugal); Franco, N. [Instituto de Plasmas e Fusão Nuclear (IPFN), Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela LRS (Portugal); Fonseca, M. [Universidade Europeia, Laureate International Universities, 1500-210 Lisboa (Portugal); Laboratório de Instrumentação, Engenharia Biomédica e Física da Radiação (LIBPhys-UNL), Departamento de Física, FCT-UNL, 2829-516 Monte da Caparica (Portugal); and others

    2016-03-15

    III–V ternary alloys semiconductor materials, in particular Ga{sub 1−x}In{sub x}Sb, are ideal candidates for device substrates because of the possibility to define the lattice constant as a function of the third element, indium. Aluminum, an isoelectric dopant for Ga and In, increases the carrier mobility in GaSb crystals and has influence over the concentration of native defects by passivating and/or compensating them. To understand the influence of Al on the distribution of indium in ternary alloys of Ga{sub 0.8}In{sub 0.2}Sb, pure and doped ingots were obtained with approximately 10{sup 20} atoms/cm{sup 3} of Al using a vertical Bridgman system. Analysis by scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX), X-ray diffraction (XRD), particle induced X-ray emission (PIXE) and particle induced gamma ray emission (PIGE) were used to obtain information on the structure defects and chemical composition of the crystals. The doped ingots showed good structural homogeneity when compared with the undoped alloy, and they were free from cracks and micro cracks. All of the obtained ingots present precipitates, twins and grains with different concentrations of In. The small compositional variation observed in the doped ingots along the radial direction (measured by PIXE), may be related to the solid–liquid interface’s quasi-equilibrium behavior. Regarding to the growth direction, it was observed that the undoped ingots exhibit a higher segregation phenomenon of the third element than the doped ingots. The obtained results indicate that aluminum influences the indium distribution in the ingots, thus ternary ingots with more homogeneous composition can be obtained and consequently electrical properties improved.

  12. AC plasma induced modifications in Sb{sub 2}S{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M; Martinez, H [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Castillo, F [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico); Pena, Y [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico); Sanchez-Juarez, A, E-mail: ciro@nucleares.unam.m [Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)

    2010-01-01

    Sb{sub 2}S{sub 3} thin films, deposited by the chemical bath deposition method, were treated with N{sub 2} plasma at 3.0 Torr during several minutes. The as-prepared Sb{sub 2}S{sub 3} thin films and films treated with N{sub 2} plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb{sub 2}S{sub 3}thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10{sup 9} to 10{sup 7} ({Omega}cm){sup -1} due to the annealing effect.

  13. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  14. Investigation of impact of neutron irradiation on properties of InSb-based hall plates

    Czech Academy of Sciences Publication Activity Database

    Ďuran, Ivan; Oszwaldowski, M.; Kovařík, Karel; Jankowski, J.; El-Ahmar, S.; Viererbl, L.; Lahodová, Z.

    2011-01-01

    Roč. 417, 1-3 (2011), s. 846-849 ISSN 0022-3115. [International Conference on Fusion Reactor Materials (ICFRM)/14./. Sapporo, 07.09.2009-12.09.2009] R&D Projects: GA MPO 2A-1TP1/101 Institutional research plan: CEZ:AV0Z20430508 Keywords : tokamak * Hall sensors * magnetic measurements * neutron irradiation Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.052, year: 2011 http://www.sciencedirect.com/science/article/pii/S0022311510009712

  15. MOCVD growth and structural characterization of In-Sb-Te nanowires

    International Nuclear Information System (INIS)

    Selmo, S.; Fanciulli, M.; Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M.; Rotunno, E.; Lazzarini, L.

    2016-01-01

    In this work, the self-assembly of In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO 2 ). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. MOCVD growth and structural characterization of In-Sb-Te nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Selmo, S.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Milano (Italy); Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Rotunno, E.; Lazzarini, L. [IMEM-CNR, Parma (Italy)

    2016-02-15

    In this work, the self-assembly of In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO{sub 2}). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Discussion on the electrical and thermoelectrical properties of amorphous In-Sb-Te Films

    Energy Technology Data Exchange (ETDEWEB)

    Aly, K.A. [University of Jeddah, Physics Department, Faculty of Science and Arts, Khulais, Jeddah (Saudi Arabia); Al-Azhar University, Assiut Branch, Physics Department, Faculty of Science, Asyut (Egypt); Saddeek, Y. [Al-Azhar University, Assiut Branch, Physics Department, Faculty of Science, Asyut (Egypt); Dahshan, A. [Port Said University, Department of Physics, Faculty of Science, Port Said (Egypt); King Khalid University, Department of Physics, Faculty of Science for Girls, Abha (Saudi Arabia)

    2016-03-15

    Different compositions of (In{sub 0.5}Sb{sub 0.5}){sub 1-x}Te{sub x} (0.50 ≤ x ≤ 0.65) thin films were prepared by thermal evaporated technique, onto pre-cleaned glass substrates at ∝298 K. Both dark electrical resistivity (ρ) and thermoelectric power (S) were measured in the temperature range 300-420 K. The concentration of the free carriers is obtained from DC conductivity and thermoelectric power measurements. Seebeck coefficient was found to be positive over entire temperature range, indicating that (In{sub 0.5}Sb{sub 0.5}){sub 1-x}Te{sub x} films are p-type semiconducting materials. Also, the variation of the mobility with temperature has been estimated. Increasing tellurium concentration is found to affect the DC conductivity and thermoelectric power of the studied films. The activation energies obtained from the DC conductivity and thermoelectric power increase with increasing tellurium content. The obtained results were interpreted according to the chemical bond approach. (orig.)

  18. Nonreciprocal waveguiding structures for THz region based on InSb

    Czech Academy of Sciences Publication Activity Database

    Kwiecien, P.; Richter, I.; Kuzmiak, Vladimír; Čtyroký, Jiří

    2017-01-01

    Roč. 34, č. 6 (2017), s. 892-903 ISSN 1084-7529 R&D Projects: GA ČR(CZ) GA16-00329S Institutional support: RVO:67985882 Keywords : Guided waves * Magneto-optical materials * Plasmonics Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.621, year: 2016

  19. Characterization of GaInSb crystal obtained by Czochralski Method

    Energy Technology Data Exchange (ETDEWEB)

    Streicher, M.; Costa, E.M.; Dedavid, B.A. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), Porto Alegre, RS (Brazil); Corregidor, V.; Franco, N.; Dias, M.; Alves, E.; Alves, L.C. [Universidade de Lisboa, Sacavem (Portugal)

    2014-07-01

    The surface morphology and chemical composition of a Ga{sub 0.93}In{sub 0.07}Sb ternary alloy crystal grown by liquid encapsulated Czochralski were investigated by means of scanning electron microscope equipped with energy dispersive X-ray spectroscopy (SEM-EDX), particle induced X-ray emission (PIXE) and X-ray diffraction (XRD) techniques. Results indicate that poor mixing of the starting compounds during the synthesizing process lead to a ternary alloy with different compositions along the growth direction. Small regions with high concentrations of indium were highlighted throughout the crystal. Different parts removed from the crystal present similar microstructures with planar defects. Up to five different regions were identified in the sample. (author)

  20. Fast current amplifier for background-limited operation of photovoltaic InSb detectors

    Energy Technology Data Exchange (ETDEWEB)

    Altmann, J; Koehler, S; Lahmann, W

    1981-01-01

    A fast current amplifier for use with photovoltaic indium antimonide detectors is described which was designed for detection of lidar return signals. Near background-limited operation was possible for bandwidths up to 0.8 MHz.

  1. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  2. A Dealloying Synthetic Strategy for Nanoporous Bismuth-Antimony Anodes for Sodium Ion Batteries.

    Science.gov (United States)

    Gao, Hui; Niu, Jiazheng; Zhang, Chi; Peng, Zhangquan; Zhang, Zhonghua

    2018-04-24

    Metal-based anodes have recently aroused much attention in sodium ion batteries (SIBs) owing to their high theoretical capacities and low sodiation potentials. However, their progresses are prevented by the inferior cycling performance caused by severe volumetric change and pulverization during the (de)sodiation process. To address this issue, herein an alloying strategy was proposed and nanoporous bismuth (Bi)-antimony (Sb) alloys were fabricated by dealloying of ternary Mg-based precursors. As an anode for SIBs, the nanoporous Bi 2 Sb 6 alloy exhibits an ultralong cycling performance (10 000 cycles) at 1 A/g corresponding to a capacity decay of merely 0.0072% per cycle, due to the porous structure, alloying effect and proper Bi/Sb atomic ratio. More importantly, a (de)sodiation mechanism ((Bi,Sb) ↔ Na(Bi,Sb) ↔ Na 3 (Bi,Sb)) is identified for the discharge/charge processes of Bi-Sb alloys by using operando X-ray diffraction and density functional theory calculations.

  3. Refinement of Mg{sub 2}Si reinforcement in a commercial Al–20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium

    Energy Technology Data Exchange (ETDEWEB)

    Nordin, Nur Azmah; Farahany, Saeed, E-mail: saeedfarahany@gmail.com; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

    2013-12-15

    Refinement by addition elements of Al–Mg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

  4. Refinement of Mg2Si reinforcement in a commercial Al–20%Mg2Si in-situ composite with bismuth, antimony and strontium

    International Nuclear Information System (INIS)

    Nordin, Nur Azmah; Farahany, Saeed; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

    2013-01-01

    Refinement by addition elements of Al–Mg 2 Si alloys is known to result in a change of primary Mg 2 Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg 2 Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg 2 Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg 2 Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg 2 Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg 2 Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms

  5. Topological Weyl semimetals in Bi1 -xSbx alloys

    Science.gov (United States)

    Su, Yu-Hsin; Shi, Wujun; Felser, Claudia; Sun, Yan

    2018-04-01

    We investigated Weyl semimetal (WSM) phases in bismuth antimony (Bi1 -xSbx ) alloys by combination of atomic composition and arrangement. Via first-principles calculations, we found two WSM states with Sb concentrations of x =0.5 and 0.83 with specific inversion-symmetry-broken elemental arrangement. The Weyl points are close to the Fermi level in both of these two WSM states. Therefore, it is likely to obtain Weyl points in Bi-Sb alloy. The WSM phase provides a reasonable explanation for the current transport study of Bi-Sb alloy with the violation of Ohm's law [D. Shin, Y. Lee, M. Sasaki, Y. H. Jeong, F. Weickert, J. B. Betts, H.-J. Kim, K.-S. Kim, and J. Kim, Nat. Mater. 16, 1096 (2017), 10.1038/nmat4965]. This paper shows that the topological phases in Bi-Sb alloys depend on both elemental composition and their specific arrangement.

  6. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    International Nuclear Information System (INIS)

    Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H

    2015-01-01

    We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)

  7. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    Science.gov (United States)

    Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-01

    We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

  8. Conductivity mechanisms in Sb-doped SnO.sub.2./sub. nanoparticle assemblies: DC and terahertz regime

    Czech Academy of Sciences Publication Activity Database

    Skoromets, Volodymyr; Němec, Hynek; Kopeček, Jaromír; Kužel, Petr

    2015-01-01

    Roč. 119, č. 33 (2015), s. 19485-19495 ISSN 1932-7447 R&D Projects: GA MŠk(CZ) LM2011029; GA ČR GA13-12386S; GA MŠk LO1409 Grant - others:AVČR(CZ) M100101218; SAFMAT(XE) CZ.2.16/3.1.00/22132; FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : semiconductor nanoparticles * terahertz spectroscopy * effective medium approximation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.509, year: 2015

  9. Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

    Science.gov (United States)

    Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

    2018-04-01

    Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

  10. Laser irradiation and thermal treatment inducing selective crystallization in Sb2O3-Sb2S3 glassy films

    Science.gov (United States)

    Avila, L. F.; Pradel, A.; Ribeiro, S. J. L.; Messaddeq, Y.; Nalin, M.

    2015-02-01

    The influence of both thermal treatment and laser irradiation on the structural and optical properties of films in the Sb2O3-Sb2S3 system was investigated. The films were prepared by RF-sputtering using glass compositions as raw materials. Irreversible photodarkening effect was observed after exposure the films to a 458 nm solid state laser. It is shown, for the first time, the use of holographic technique to measure "in situ", simultaneously and independently, the phase and amplitude modulations in glassy films. The films were also photo-crystallized and analysed "in situ" using a laser coupled to a micro-Raman equipment. Results showed that Sb2S3 crystalline phase was obtained after irradiation. The effect of thermal annealing on the structure of the films was carried out. Different from the result obtained by irradiation, thermal annealing induces the crystallization of the Sb2O3 phase. Photo and thermal induced effects on films were studied using UV-Vis and Raman spectroscopy, atomic force microscopy (AFM), thermal analysis (DSC), X-ray diffraction, scanning electron microscopy (MEV) and energy-dispersive X-ray spectroscopy (EDX).

  11. Lower lattice thermal conductivity in SbAs than As or Sb monolayers: a first-principles study.

    Science.gov (United States)

    Guo, San-Dong; Liu, Jiang-Tao

    2017-12-06

    Phonon transport in group-VA element (As, Sb and Bi) monolayer semiconductors has been widely investigated in theory, and, of them, monolayer Sb (antimonene) has recently been synthesized. In this work, phonon transport in monolayer SbAs is investigated with a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of monolayer SbAs is lower than those of both monolayer As and Sb, and the corresponding sheet thermal conductance is 28.8 W K -1 at room temperature. To understand the lower lattice thermal conductivity in monolayer SbAs than those in monolayer As and Sb, the group velocities and phonon lifetimes of monolayer As, SbAs and Sb are calculated. The calculated results show that the group velocities of monolayer SbAs are between those of monolayer As and Sb, but that the phonon lifetimes of SbAs are smaller than those of both monolayer As and Sb. Hence, the low lattice thermal conductivity in monolayer SbAs is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4%, which is obviously different from those of monolayer As and Sb with very large contributions. This can be explained by very small phonon lifetimes for the ZA branch of monolayer SbAs. The lower lattice thermal conductivity of monolayer SbAs compared to that of monolayer As or Sb can be understood by the alloying of As (Sb) with Sb (As), which should introduce phonon point defect scattering. We also consider the isotope and size effects on the lattice thermal conductivity. It is found that isotope scattering produces a neglectful effect, and the lattice thermal conductivity with a characteristic length smaller than 30 nm can reach a decrease of about 47%. These results may offer perspectives on tuning the lattice thermal conductivity by the mixture of multiple elements for applications of thermal management and thermoelectricity, and motivate further experimental efforts to synthesize monolayer SbAs.

  12. Evaluation of Glass Density to Support the Estimation of Fissile Mass Loadings from Iron Concentrations in SB6 Glasses

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, T.; Peeler, D.

    2010-12-15

    The Department of Energy - Savannah River (DOE-SR) previously provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of the guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft{reg_sign} Excel{reg_sign} spreadsheet for the evaluation of fissile loading in Sludge Batch 5 glass based on the Fe concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that SRNL provide the necessary information to allow SRR to update the Excel spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 6 (SB6). One of the primary inputs into the fissile loading spreadsheet includes a bounding density for SB6-based glasses. Based on the measured density data of select SB6 variability study glasses, SRNL recommends that SRR utilize the 99/99 Upper Tolerance Limit (UTL) density value at 38% WL (2.823 g/cm{sup 3}) as a bounding density for SB6 glasses to assess the fissile concentration in this glass system. That is, the 2.823 g/cm{sup 3} is recommended as a key (and fixed) input into the fissile concentration spreadsheet for SB6 processing. It should be noted that no changes are needed to the underlying structure of the Excel based spreadsheet to support fissile assessments for SB6. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB6 Waste Acceptance Product Specification (WAPS) sample. The purpose of this technical report is to present the density measurements that were determined for the SB6 variability study glasses and to conduct a statistical evaluation of these measurements to provide a bounding density value that may be used as input to the Excel{reg_sign} spreadsheet to be employed by SRR to maintain the fissile concentration in its SB6 glass below 897 g/m{sup 3}. It should be noted that no changes are needed to the underlying structure of the Excel{reg_sign} based spreadsheet to support fissile assessments for SB6.

  13. Impact of the Topological Surface State on the Thermoelectric Transport in Sb2Te3 Thin Films.

    Science.gov (United States)

    Hinsche, Nicki F; Zastrow, Sebastian; Gooth, Johannes; Pudewill, Laurens; Zierold, Robert; Rittweger, Florian; Rauch, Tomáš; Henk, Jürgen; Nielsch, Kornelius; Mertig, Ingrid

    2015-04-28

    Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb2Te3 films are presented. The thickness-dependent electrical conductivity and the thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Contributions of the bulk and the surface to the transport coefficients are separated, which enables to identify a clear impact of the topological surface state on the thermoelectric properties. When the charge carrier concentration is tuned, a crossover between a surface-state-dominant and a Fuchs-Sondheimer transport regime is achieved. The calculations are corroborated by thermoelectric transport measurements on Sb2Te3 films grown by atomic layer deposition.

  14. Observation of coherent optical phonons excited by femtosecond laser radiation in Sb films by ultrafast electron diffraction method

    Energy Technology Data Exchange (ETDEWEB)

    Mironov, B. N.; Kompanets, V. O.; Aseev, S. A., E-mail: isanfemto@yandex.ru [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Ischenko, A. A. [Moscow Technological University, Institute of High Chemical Technologies (Russian Federation); Kochikov, I. V. [Moscow State University (Russian Federation); Misochko, O. V. [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation); Chekalin, S. V.; Ryabov, E. A. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)

    2017-03-15

    The generation of coherent optical phonons in a polycrystalline antimony film sample has been investigated using femtosecond electron diffraction method. Phonon vibrations have been induced in the Sb sample by the main harmonic of a femtosecond Ti:Sa laser (λ = 800 nm) and probed by a pulsed ultrashort photoelectron beam synchronized with the pump laser. The diffraction patterns recorded at different times relative to the pump laser pulse display oscillations of electron diffraction intensity corresponding to the frequencies of vibrations of optical phonons: totally symmetric (A{sub 1g}) and twofold degenerate (E{sub g}) phonon modes. The frequencies that correspond to combinations of these phonon modes in the Sb sample have also been experimentally observed.

  15. Study of luminescence and optical resonances in Sb{sub 2}O{sub 3} micro- and nanotriangles

    Energy Technology Data Exchange (ETDEWEB)

    Cebriano, Teresa; Mendez, Bianchi, E-mail: bianchi@fis.ucm.es; Piqueras, Javier [Universidad Complutense de Madrid, Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas (Spain)

    2012-10-15

    Luminescence of micro- and nanotriangles of cubic antimony oxide, Sb{sub 2}O{sub 3} has been investigated by cathodoluminescence (CL) in scanning electron microscope and by photoluminescence (PL) in a laser confocal microscope. The triangles were grown by a thermal evaporation-deposition process with pure antimony powders as precursor, and present a self assembled arrangement covering extended areas of the samples. CL spectra of the triangles show bands at 2-2.5 and 3.1 eV, the latter is not observed in the Sb{sub 2}O{sub 3} initial powder. PL excited by 325 nm laser shows a band at 2.4 eV with a shoulder at 2.75 eV, as well as resonance modes suggesting optical cavity behavior of the triangles. The separation between resonant peaks from different triangles has been correlated with the triangle side length and possible optical paths were obtained according to the Fabry-Perot relationship. These results along with the optical images suggest that not only Fabry-Perot cavity modes, but also whispering gallery modes may occur inside the micro- and nanotriangle structures.

  16. Growth Optimization Studies to Develop InAs/GaInSb Superlattice Materials for Very Long Wavelength Infrared Detection (Postprint)

    Science.gov (United States)

    2014-10-01

    We increased the As beam equivalent pressure ( BEP ) flux from 1.4 107 to 2.2 107 torr, while the Sb BEP fixed at 4.8 107 - torr to observe... BEP , respectively. Sample Tg (C) As/Sb (a.u.) P (Å) Strain (%) RMS (Å) Eg (meV) PR intensity (arb. units) SL1 390 0.30 67.8 +0.18 21 X X SL2 400 0.30

  17. Electric- and magnetic-field tuning of spin-resolved one-dimensional subbands in an InSb nanowire

    DEFF Research Database (Denmark)

    Estrada Saldana, Juan Carlos; Cleuziou, J.P.; Lee, E.H.

    2017-01-01

    of 2e2/h, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. We conclude that the subband energy spacings and g-factors are strongly affected by the tunable landscape of the local electrostatic potential. Finally, our measurements reveal the presence...

  18. Near surface composition of some alloys by X-ray photoelectron ...

    Indian Academy of Sciences (India)

    0.70Ni0.30) and BiSb (Bi0.80Sb0.20, Bi0.64Sb0.34, Bi0.55Sb0.45) are determined by X-ray photoelectron spectroscopy. The stoichiometries are determined and are compared with the bulk compositions. Possible sources of systematic errors ...

  19. Study of irradiation damages in MgAl{sub 2}O{sub 4} and ZnAl{sub 2}O{sub 4} spinels in the framework of nuclear waste transmutation; Dommages d'irradiation dans des ceramiques de structure spinelle MgAl{sub 2}O{sub 4} et ZnAl{sub 2}O{sub 4} application a la transmutation des dechets nucleaires

    Energy Technology Data Exchange (ETDEWEB)

    Thiriet-Dodane, C

    2002-07-01

    The transmutation of minor actinides in-reactor is one solution currently being studied for the long time management of nuclear waste. In the heterogeneous concept the radionuclides are incorporating in an inert ceramic matrix. The support material must be insensitive to radiation damage. Fission product damage is the main radiation damage source during the transmutation process and therefore it is of the utmost importance to study their effects. We irradiated spinels MgAl{sub 2}O{sub 4} (matrix of reference) and ZnAl{sub 2}O{sub 4} by fast ions (by example: {sup 86}Kr of approximately 400 MeV) simulating the fission products. Under these conditions, the damage is primarily due to the electronic energy losses (S{sub e}). One of the structural features of spinel AB{sub 2}O{sub 4} is that the two cations (A{sup 2+} and B{sup 3+}) can exchange their site. This phenomenon is quantified by the inversion parameter. We highlight by XRD in grazing incidence that the structural changes observed in MgAl{sub 2}O{sub 4} correspond to an order-disorder transition from the cation sub-networks and not to a phase shift as described in the literature. Using other techniques characterizing the space group (Raman spectroscopy) as well as the local order (NMR 27Al, spectroscopy of absorption X with the thresholds K of Al and Zn), we confirm this interpretation. Moreover, for a fluence of 10{sup 14} ions/cm{sup 2}, the loss of the order at long distance is observed thus meaning a beginning of amorphization of material. The ZnAl{sub 2}O{sub 4} spinel presents the same behaviour. For this last spinel, an evolution of the inversion parameter according to the stopping power 2 was highlighted after irradiation by ions {sup 86}Kr from approximately 20 MeV. We illustrate our study by the analysis of the results obtained in XRD of an irradiation out of composite fuel (MgAl{sub 2}O{sub 4} + UO{sub 2}) called THERMHET. (authors)

  20. Multiple superconducting gaps in MgB2 single crystals from magnetic torque

    International Nuclear Information System (INIS)

    Atsumi, Toshiyuki; Xu, Mingxiang; Kitazawa, Hideaki; Ishida, Takekazu

    2004-01-01

    We have measured the magnetic torque of an MgB 2 single crystal in the various different fields below 10 kG by using a torque magnetometer and a 4 K closed cycle refrigerator. The MgB 2 single crystal was synthesized by the vapor transport method. The torque can be measured as an off-balance signal of the Wheatstone bridge of the four piezoresistors on a Si cantilever. The torque curves are analyzed by the Kogan model. The superconducting anisotropy γ is rather independent of temperature in 5 and 10 kG, but is dependent on field up to 60 kG. We consider that the field dependence of γ comes from the nature of the multiple superconducting gaps. The experimental results show that the π-band superconducting gaps have been deteriorated gradually up to a crossover field H * (π) ∼ 20 kG at 10 K when the magnetic field increases

  1. Cr diffusion in MgAl2O4 synthetic spinels: preliminary results

    Science.gov (United States)

    Freda, C.; Celata, B.; Andreozzi, G.; Perinelli, C.; Misiti, V.

    2012-04-01

    Chromian spinel is an accessory phase common in crustal and mantle rocks, including peridotites, gabbros and basalts. Spinel, it has been identified as one of the most effective, sensible, and versatile petrogenetic indicator in mafic and ultramafic rock systems due to the strict interdependence between its physico-chemical properties (chemical composition, cation configuration etc.) and genetic conditions (temperature, pressure, and chemical characteristics of the system). In particular, studies on intra- and inter-crystalline Mg-Fe2+, Cr-Al exchange demonstrated the close relationship between spinel composition and both degree of partial melting and equilibrium temperature of spinel-peridotites. Moreover, studies focused on the chemical zoning of Mg-Fe2+ and/or Cr-Al components in spinel have been used, combined with a diffusion model, to provide quantitative information on peridotites and gabbros pressure-temperature paths and on deformation mechanisms. Although these potentials, most of the experimental studies have been performed on spinels hosting a limited content of divalent iron (sensu stricto, MgAl2O4), whereas the scarce studies on Cr-Al inter-diffusion coefficient have been performed at 3-7 GPa as pressure boundary condition. In order to contribute to the understanding of processes occurring in the lithospheric mantle, we have initiated an experimental research project aiming at determining the Cr-Al inter-diffusion in spinel at 2 GPa pressure and temperature ranging from 1100 to 1250 °C. The experiments were performed in a end-loaded piston cylinder by using a 19 mm assembly and graphite-Pt double capsules. As starting materials we used synthetic Mg-Al spinel (200-300 μm in size) and Cr2O3 powder. Microanalyses of experimental charge were performed on polished carbon-coated mounts by electronic microprobe. Line elemental analyses were made perpendicular to the contact surface between Cr2O3 powder and spinel, at interval of 2 μm. By processing these preliminary data, we have estimated a diffusion coefficient of chromium (D) of 7.6·10-15 m2s-1.

  2. Measuring the critical resolved shear stresses in Mg alloys by instrumented nanoindentation

    International Nuclear Information System (INIS)

    Sánchez-Martín, R.; Pérez-Prado, M.T.; Segurado, J.; Bohlen, J.; Gutiérrez-Urrutia, I.; Llorca, J.; Molina-Aldareguia, J.M.

    2014-01-01

    One of the main limiting factors in the development of new magnesium (Mg) alloys with enhanced mechanical behavior is the need to use vast experimental campaigns for microstructure and property screening. For example, the influence of new alloying additions on the critical resolved shear stresses (CRSSs) is currently evaluated by a combination of macroscopic single-crystal experiments and crystal plasticity finite-element simulations (CPFEM). This time-consuming process could be considerably simplified by the introduction of high-throughput techniques for efficient property testing. The aim of this paper is to propose a new and fast, methodology for the estimation of the CRSSs of hexagonal close-packed metals which, moreover, requires small amounts of material. The proposed method, which combines instrumented nanoindentation and CPFEM modeling, determines CRSS values by comparison of the variation of hardness (H) for different grain orientations with the outcome of CPFEM. This novel approach has been validated in a rolled and annealed pure Mg sheet, whose H variation with grain orientation has been successfully predicted using a set of CRSSs taken from recent crystal plasticity simulations of single-crystal experiments. Moreover, the proposed methodology has been utilized to infer the effect of the alloying elements of an MN11 (Mg–1% Mn–1% Nd) alloy. The results support the hypothesis that selected rare earth intermetallic precipitates help to bring the CRSS values of basal and non-basal slip systems closer together, thus contributing to the reduced plastic anisotropy observed in these alloys

  3. Origin of the reversed yield asymmetry in Mg-rare earth alloys at high temperature

    International Nuclear Information System (INIS)

    Hidalgo-Manrique, P.; Herrera-Solaz, V.; Segurado, J.; Llorca, J.; Gálvez, F.; Ruano, O.A.; Yi, S.B.; Pérez-Prado, M.T.

    2015-01-01

    The mechanical behaviour in tension and compression of an extruded Mg–1 wt.% Mn–1 wt.% Nd (MN11) alloy was studied along the extrusion direction in the temperature range −175 °C to 300 °C at both quasi-static and dynamic strain rates. Microstructural analysis revealed that the as-extruded bar presents a recrystallized microstructure and a weak texture that remain stable in the whole temperature range. A remarkable reversed yield stress asymmetry was observed above 150 °C, with the compressive yield stress being significantly higher than the tensile yield stress. The origin of this anomalous reversed yield stress asymmetry, which to date remains unknown, was investigated through the analysis of the macro and microtexture development during deformation, as well as by means of crystal plasticity finite element simulations of a representative volume element of the polycrystal. The critical resolved shear stresses of slip and twining for simulated single crystals were obtained as a function of the temperature by means of an inverse optimisation strategy. Experimental and simulation results suggest that the reversed yield asymmetry may be primarily attributed to the non-Schmid behaviour of pyramidal 〈c + a〉 slip, which is the dominant deformation mechanism at high temperatures. It is proposed, furthermore, that the asymmetry is enhanced at quasi-static strain rates by the stronger interaction of 〈c + a〉 dislocations with the diffusing solute atoms and particles in compression than in tension

  4. Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Strelcov, Evgheni; Kravchenko, Ivan I.; Kalinin, Sergei V. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia [Department of Applied Physics, KTH - Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro, Portugal and Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2015-12-28

    Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarization as well as atmospheric conditions. In addition, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. Polarization dependent current flow, attributed to charged domain walls and band bending, demonstrates the rectifying ability of Mg:LN in combination with suitable metal electrodes that allow for further tailoring of conductivity.

  5. Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

    International Nuclear Information System (INIS)

    Neumayer, Sabine M.; Rodriguez, Brian J.; Strelcov, Evgheni; Kravchenko, Ivan I.; Kalinin, Sergei V.; Manzo, Michele; Gallo, Katia; Kholkin, Andrei L.

    2015-01-01

    Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarization as well as atmospheric conditions. In addition, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. Polarization dependent current flow, attributed to charged domain walls and band bending, demonstrates the rectifying ability of Mg:LN in combination with suitable metal electrodes that allow for further tailoring of conductivity

  6. Kinetics of phase transformations in Mg2Ni-H system

    Czech Academy of Sciences Publication Activity Database

    Čermák, Jiří; Král, Lubomír; David, Bohumil; Stloukal, Ivo

    2008-01-01

    Roč. 138, - (2008), s. 71-90 ISSN 1012-0394 R&D Projects: GA ČR GA106/07/0010 Institutional research plan: CEZ:AV0Z20410507 Keywords : hydrogen storage * hydrogen diffusion * phase transformations Subject RIV: BJ - Thermodynamics http://www.scientific.net/3-908451-49-3/71/

  7. Multi-gap superconductivity in MgB2: Magneto-Raman spectroscopy

    International Nuclear Information System (INIS)

    Blumberg, G.; Mialitsin, A.; Dennis, B.S.; Zhigadlo, N.D.; Karpinski, J.

    2007-01-01

    Electronic Raman scattering studies on MgB 2 single crystals as a function of excitation and polarization have revealed three distinct superconducting features: a clean gap below 37 cm -1 and two coherence peaks at 109 and 78 cm -1 which we identify as the superconducting gaps in π- and σ-bands and as the Leggett's collective mode arising from the fluctuation in the relative phase between two superconducting condensates residing on corresponding bands. The temperature and field dependencies of the superconducting features have been established. A phononic Raman scattering study of the E 2g boron stretching mode anharmonicity and of superconductivity induced self-energy effects is presented. We show that anharmonic two phonon decay is mainly responsible for the unusually large linewidth of the E 2g mode. We observe ∼2.5% hardening of the E 2g phonon frequency upon cooling into the superconducting state and estimate the electron-phonon coupling strength associated with this renormalization

  8. Compositional variations of chromiferous spinel in Mg-rich rocks of ...

    Indian Academy of Sciences (India)

    tions typical of spinels found in mid-ocean ridge basalts. ... composition of the source region of the magmas ... The Deccan Traps, one of the largest continen- tal LIPs ... outcrops in the Seychelles Islands (Mahoney 1988; ...... Beane J E 1994 A role for lower continental crust in flood ... magmatic evolution; J. Asian Earth Sci.

  9. Thermoluminescence characteristics in MgSO sub 4 : Tm, P phosphors

    CERN Document Server

    Tang Qiang; Li Hua; Luo Da Ling

    2002-01-01

    The TL glow curves and three dimensional spectrum of co-doped MgSO sub 4 : Tm, P powder sample were measured after exposed it to gamma radiation ( sup 6 sup 0 Co and sup 1 sup 3 sup 7 Cs gamma) from 10 sup - sup 4 - 2 x 10 sup 4 Gy. Some peaks parameters and trap parameters of TL peaks were calculated. The main dose peak is about at 289.3 degree C, and the dose response is super-linear. From the three dimensional TL spectrum, it shows that the main glow wavelengths is at about 365 nm, 460 nm and 660 nm. By comparison of some other TL materials, this phosphor has some good performances, such as high sensitivity, good stability and a wide span of dose response. It may be a good TL material that can be applied widely in dosimetry

  10. Activity of pyramidal I and II slip in Mg alloys as revealed by texture development

    Science.gov (United States)

    Zecevic, Miroslav; Beyerlein, Irene J.; Knezevic, Marko

    2018-02-01

    Due to the geometry of the hexagonal close-packed (HCP) lattice, there are two types of pyramidal slip modes: { 10 1 bar 1 } 〈 11 2 bar 3 bar 〉 or type I and { 1 bar 1 bar 22 } 〈 11 2 bar 3 〉 or type II in HCP crystalline materials. Here we use crystal plasticity to examine the importance of crystallographic slip by pyramidal type I and type II on texture evolution. The study is applied to an Mg-4%Li alloy. An elastic-plastic polycrystal model is employed to elucidate the reorientation tendencies of these two slip modes in rolling of a textured polycrystal. Comparisons with experimental texture measurements indicate that both pyramidal I and II type slip were active during rolling deformation, with pyramidal I being the dominant mode. A single-slip-mode analysis is used to identify the orientations that prefer pyramidal I vs. II type slip when acting alone in a crystal. The analysis applies not only to Mg-4%Li, but identifies the key texture components in HCP crystals that would help distinguish the activity of pyramidal I from pyramidal II slip in rolling deformation.

  11. Surface barrier and bulk pinning in MgB$_2$ superconductor

    OpenAIRE

    Pissas, M.; Moraitakis, E.; Stamopoulos, D.; Papavassiliou, G.; Psycharis, V.; Koutandos, S.

    2001-01-01

    We present a modified method of preparation of the new superconductor MgB$_2$. The polycrystalline samples were characterized using x-ray and magnetic measurements. The surface barriers control the isothermal magnetization loops in powder samples. In bulk as prepared samples we always observed symmetric magnetization loops indicative of the presence of a bulk pinning mechanism. Magnetic relaxation measurements in the bulk sample reveal a crossover of surface barrier to bulk pinning.

  12. A review of the quantum Hall effects in MgZnO/ZnO heterostructures

    Science.gov (United States)

    Falson, Joseph; Kawasaki, Masashi

    2018-05-01

    This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

  13. Acousto-electric transport in MgO/ZnO-covered graphene on SiC

    Science.gov (United States)

    Liou, Y.-T.; Hernández-Mínguez, A.; Herfort, J.; Lopes, J. M. J.; Tahraoui, A.; Santos, P. V.

    2017-11-01

    We investigate the acousto-electric transport induced by surface acoustic waves (SAWs) in epitaxial graphene (EG) coated by a MgO/ZnO film. The deposition of a thin MgO layer protects the EG during the sputtering of a piezoelectric ZnO film for the efficient generation of SAWs. We demonstrate by Raman and electric measurements that the coating does not harm the EG structural and electronic properties. We report the generation of two SAW modes with frequencies around 2 GHz. For both modes, we measure acousto-electric currents in EG devices placed in the SAW propagation path. The currents increase linearly with the SAW power, reaching values up to almost two orders of magnitude higher than in previous reports for acousto-electric transport in EG on SiC. Our results agree with the predictions from the classical relaxation model of the interaction between SAWs and a two dimensional electron gas.

  14. Thermodynamic modeling of hydrogen storage capacity in Mg-Na alloys.

    Science.gov (United States)

    Abdessameud, S; Mezbahul-Islam, M; Medraj, M

    2014-01-01

    Thermodynamic modeling of the H-Mg-Na system is performed for the first time in this work in order to understand the phase relationships in this system. A new thermodynamic description of the stable NaMgH3 hydride is performed and the thermodynamic models for the H-Mg, Mg-Na, and H-Na systems are reassessed using the modified quasichemical model for the liquid phase. The thermodynamic properties of the ternary system are estimated from the models of the binary systems and the ternary compound using CALPHAD technique. The constructed database is successfully used to reproduce the pressure-composition isotherms for MgH2 + 10 wt.% NaH mixtures. Also, the pressure-temperature equilibrium diagram and reaction paths for the same composition are predicted at different temperatures and pressures. Even though it is proved that H-Mg-Na does not meet the DOE hydrogen storage requirements for onboard applications, the best working temperatures and pressures to benefit from its full catalytic role are given. Also, the present database can be used for thermodynamic assessments of higher order systems.

  15. Hydrogen storage in Mg-Ti thin film alloys : an in situ characterization study

    NARCIS (Netherlands)

    Vermeulen, P.

    2009-01-01

    Depleting fossil fuel reserves and growing climate threats urge us towards a sustainable society. Moreover, we should preferably not solely rely on fossil fuels for our primary energy needs as part of the fossil fuels is imported from politically unstable regions. We should therefore think of new

  16. Analysis of intermetallic particles in Mg-12 wt.%Zn binyry alloy using transmission electron microscopy

    Czech Academy of Sciences Publication Activity Database

    Němec, Martin; Gärtnerová, Viera; Klementová, Mariana; Jäger, Aleš

    2015-01-01

    Roč. 106, Aug (2015), s. 428-436 ISSN 1044-5803 R&D Projects: GA ČR GBP108/12/G043 Institutional support: RVO:68378271 Keywords : biomedical alloy s * heat treatment * microstructure * transmission electron microscopy * electron diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.383, year: 2015

  17. Microstructural evolution in Mg-Zn alloys during solidification: An experimental and simulation study

    Science.gov (United States)

    Paliwal, Manas; Jung, In-Ho

    2014-05-01

    A comprehensive microstructural evolution of Mg-1.5, 4.0 and 5.5 wt% Zn alloys with respect to the solidification parameters such as thermal gradient (G), solidification velocity (V), cooling rate (GV) and solute (Zn) content were investigated in the present study. Solidification techniques such as directional solidification and wedge casting were employed in order to obtain cooling rates between 0.05 and 250 K/s. Microstructural features such as secondary dendrite arm spacing (SDAS), primary dendrite arm spacing (PDAS), microsegregration along the secondary dendrites and secondary phase fractions were experimentally determined. A solidification model that incorporates solute back diffusion, secondary arm coarsening, dendrite tip undercooling and dynamically linked with accurate thermodynamic databases is used to explain the experimental results.

  18. Self-diffusion in MgO--a density functional study.

    Science.gov (United States)

    Runevall, Odd; Sandberg, Nils

    2011-08-31

    Density functional theory calculations have been performed to study self-diffusion in magnesium oxide, a model material for a wide range of ionic compounds. Formation energies and entropies of Schottky defects and divacancies were obtained by means of total energy and phonon calculations in supercell configurations. Transition state theory was used to estimate defect migration rates, with migration energies taken from static calculations, and the corresponding frequency factors estimated from the phonon spectrum. In all static calculations we corrected for image effects using either a multipole expansion or an extrapolation to the low concentration limit. It is shown that both methods give similar results. The results for self-diffusion of Mg and O confirm the previously established picture, namely that in materials of nominal purity, Mg diffuses extrinsically by a single vacancy mechanism, while O diffuses intrinsically by a divacancy mechanism. Quantitatively, the current results are in very good agreement with experiments concerning O diffusion, while for Mg the absolute diffusion rate is generally underestimated by a factor of 5-10. The reason for this discrepancy is discussed.

  19. Room temperature ferromagnetism in Mg-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Singh, Jaspal; Vashihth, A.; Gill, Pritampal Singh; Verma, N. K.

    2015-01-01

    Zn 1-x Mg x O (x = 0, 0,10) nanoparticles were successfully synthesized using sol-gel method. X-ray diffraction (XRD) confirms that the synthesized nanoparticles possess wurtzite phase having hexagonal structure. Morphological analysis was carried out using transmission electron microscopy (TEM) which depicts the spherical morphology of ZnO nanoparticles. Energy dispersive spectroscopy (EDS) showed the presence of Mg in ZnO nanoparticles. Electron spin resonance (ESR) signal was found to be decreasing with increasing of Mg-doping concentration. The room temperature ferromagnetism was observed in undoped and Mg-doped ZnO nanoparticles. The increase of Mg-doping concentration resulted in decrease of saturation magnetization value which could be attributed to decrease of oxygen vacancies present in host nanoparticles

  20. Self-learning kinetic Monte Carlo simulations of Al diffusion in Mg

    International Nuclear Information System (INIS)

    Nandipati, Giridhar; Govind, Niranjan; Andersen, Amity; Rohatgi, Aashish

    2016-01-01

    Vacancy-mediated diffusion of an Al atom in the pure Mg matrix is studied using the atomistic, on-lattice self-learning kinetic Monte Carlo (SLKMC) method. Activation barriers for vacancy-Mg and vacancy-Al atom exchange processes are calculated on the fly using the climbing image nudged-elastic-band method and binary Mg–Al modified embedded-atom method interatomic potential. Diffusivities of an Al atom obtained from SLKMC simulations show the same behavior as observed in experimental and theoretical studies available in the literature; that is, an Al atom diffuses faster within the basal plane than along the c-axis. Although the effective activation barriers for an Al atom diffusion from SLKMC simulations are close to experimental and theoretical values, the effective prefactors are lower than those obtained from experiments. We present all the possible vacancy-Mg and vacancy-Al atom exchange processes and their activation barriers identified in SLKMC simulations. A simple mapping scheme to map an HCP lattice onto a simple cubic lattice is described, which enables simulation of the HCP lattice using the on-lattice framework. We also present the pattern recognition scheme which is used in SLKMC simulations to identify the local Al atom configuration around a vacancy. (paper)

  1. Microstructural evolution in Mg-rich Mg-Zn-Y alloys

    International Nuclear Information System (INIS)

    Biswas, T.; Ranganathan, S.; Nair, S.; Bajargan, G.

    2005-01-01

    Mg-rich Mg-Zn-Y alloys with nominal compositions Mg 97 Zn 1 Y 2 , Mg 97 Zn 2 Y 1 , Mg 92 Zn 6.5 Y 1.5 and Mg 97-x Zn 1 Y 2 Zr x have been chosen for the present study. These alloys are prepared by using sand casting mold. The sand cast alloys are remelted and subjected to copper mold casting and melt spinning techniques. The effect of cooling rate on microstructures was studied. It is observed that the size of the precipitates decreases with an increase of cooling rate. The formation of nano precipitates results in higher strength of the alloy as compared to the conventional alloys. The microstructures of melt spun ribbons are compared with RS/PM (rapidly solidified power metallurgy) Mg 97 Zn 1 Y 2 alloy, obtained from a different source. (author)

  2. Thermodynamic Modeling of Hydrogen Storage Capacity in Mg-Na Alloys

    Science.gov (United States)

    Abdessameud, S.; Mezbahul-Islam, M.; Medraj, M.

    2014-01-01

    Thermodynamic modeling of the H-Mg-Na system is performed for the first time in this work in order to understand the phase relationships in this system. A new thermodynamic description of the stable NaMgH3 hydride is performed and the thermodynamic models for the H-Mg, Mg-Na, and H-Na systems are reassessed using the modified quasichemical model for the liquid phase. The thermodynamic properties of the ternary system are estimated from the models of the binary systems and the ternary compound using CALPHAD technique. The constructed database is successfully used to reproduce the pressure-composition isotherms for MgH2 + 10 wt.% NaH mixtures. Also, the pressure-temperature equilibrium diagram and reaction paths for the same composition are predicted at different temperatures and pressures. Even though it is proved that H-Mg-Na does not meet the DOE hydrogen storage requirements for onboard applications, the best working temperatures and pressures to benefit from its full catalytic role are given. Also, the present database can be used for thermodynamic assessments of higher order systems. PMID:25383361

  3. Temperature evolution of subharmonic gap structures in MgB{sub 2}/Nb point-contacts

    Energy Technology Data Exchange (ETDEWEB)

    Giubileo, F. [CNR-INFM Laboratorio Regionale SUPERMAT e Dipartimento di Fisica ' E.R. Caianiello' , Universita degli Studi di Salerno, via Salvador Allende, 84081 Baronissi (Italy)], E-mail: giubileo@sa.infn.it; Bobba, F.; Scarfato, A.; Piano, S. [CNR-INFM Laboratorio Regionale SUPERMAT e Dipartimento di Fisica ' E.R. Caianiello' , Universita degli Studi di Salerno, via Salvador Allende, 84081 Baronissi (Italy); Aprili, M. [Laboratoire de Spectroscopie en Lumiere Polarisee, ESPCI, 10 rue Vauquelin, 75005 Paris (France); CSNSM-CNRS, Bat. 108 Universite Paris-Sud, 91405 Orsay (France); Cucolo, A.M. [CNR-INFM Laboratorio Regionale SUPERMAT e Dipartimento di Fisica ' E.R. Caianiello' , Universita degli Studi di Salerno, via Salvador Allende, 84081 Baronissi (Italy)

    2007-09-01

    We have performed point-contact spectroscopy experiments on superconducting micro-constrictions between Nb tips and high quality MgB{sub 2} pellets. We measured the temperature evolution (between 4.2 K and 300 K) of the current-voltage (I-V) and of the dynamical conductance (dI/dV-V) characteristics. Above the Nb critical temperature T{sub C}{sup Nb}, the conductance of the constrictions behaves as predicted by the BTK model for S/N contacts being Nb in its normal state below T{sub C}{sup Nb}, the contacts show Josephson current and subharmonic gap structures, due to multiple Andreev reflections. These observations clearly indicate the coupling of the MgB{sub 2} 3D {pi}-band with the Nb superconducting order parameter. We found {delta}{sub {pi}} = 2.4 {+-} 0.2 meV for the three-dimensional gap of MgB{sub 2}.

  4. On possibility origination of superconductivity in MgB sub 2 compound

    CERN Document Server

    Zajtsev, R O

    2001-01-01

    The mechanism of originating superconductivity in the MgB sub 2 is studied on the basis of the Hubbard generalized model. The possibility of existence of the Cooper instability in the system with jumps between the cations and anions of the nontransient elements is established with application of the notion on the strong interaction. Filling of the boron four electron p-shell and the magnesium two-electron 3s sup 2 shell is considered with an account of the hexagonal symmetry of the MgB sub 2 elementary cell. The phase diagram of existing the superconductivity in dependence on the filling rate of the (n sub p)p sup 6 and (n sub s)s sup 2 -shells of the nontransient elements is plotted

  5. The relation between ductility and stacking fault energies in Mg and Mg–Y alloys

    International Nuclear Information System (INIS)

    Sandlöbes, S.; Friák, M.; Zaefferer, S.; Dick, A.; Yi, S.; Letzig, D.; Pei, Z.; Zhu, L.-F.; Neugebauer, J.; Raabe, D.

    2012-01-01

    The underlying mechanisms that are responsible for the improved room-temperature ductility in Mg–Y alloys compared to pure Mg are investigated by transmission electron microscopy and density functional theory. Both methods show a significant decrease in the intrinsic stacking fault I 1 energy (I 1 SFE) with the addition of Y. The influence of the SFE on the relative activation of different competing deformation mechanisms (basal, prismatic, pyramidal slip) is discussed. From this analysis we suggest a key mechanism which explains the transition from primary basal slip in hexagonal close-packed Mg to basal plus pyramidal slip in solid solution Mg–Y alloys. This mechanism is characterized by enhanced nucleation of 〈c + a〉 dislocations where the intrinsic stacking fault I 1 (ISF 1 ) acts as heterogeneous source for 〈c + a〉 dislocations. Possible electronic and geometric reasons for the modification of the SFE by substitutional Y atoms are identified and discussed.

  6. Hydrogen storage in Mg-Ni-Fe compounds prepared by melt spinning and ball milling

    Energy Technology Data Exchange (ETDEWEB)

    Palade, P. [Settore Materiali, Dipartimento di Ingegneria Meccanica, Universita di Padova, via Marzolo 9, 35131 Padova (Italy); National Institute for Physics of Materials, Atomistilor 105 bis, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania); Sartori, S. [Settore Materiali, Dipartimento di Ingegneria Meccanica, Universita di Padova, via Marzolo 9, 35131 Padova (Italy); Maddalena, A. [Settore Materiali, Dipartimento di Ingegneria Meccanica, Universita di Padova, via Marzolo 9, 35131 Padova (Italy); Principi, G. [Settore Materiali, Dipartimento di Ingegneria Meccanica, Universita di Padova, via Marzolo 9, 35131 Padova (Italy)]. E-mail: giovanni.principi@unipd.it; Lo Russo, S. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy); Lazarescu, M. [National Institute for Physics of Materials, Atomistilor 105 bis, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania); Schinteie, G. [National Institute for Physics of Materials, Atomistilor 105 bis, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania); Kuncser, V. [National Institute for Physics of Materials, Atomistilor 105 bis, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania); Filoti, G. [National Institute for Physics of Materials, Atomistilor 105 bis, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania)

    2006-05-18

    Magnesium-rich Mg-Ni-Fe intermetallic compounds have been prepared by two different routes: (a) short time ball milling of ribbons obtained by melt spinning; (b) long time ball milling of a mixture of MgH{sub 2}, Ni and Fe powders. The first type of samples displays an hydrogen desorption kinetics better than the second one. Pressure composition isotherm measurements exhibit for both type of samples two plateaux, the lower and wider corresponding to the MgH{sub 2} phase and the upper and shorter corresponding to the Mg{sub 2}NiH{sub 4} phase. The presence of the two types of hydrides is confirmed by X-ray diffraction analysis. Moessbauer spectroscopy shows that in melt spun and subsequently milled samples iron is mainly in a disordered structure and segregates after hydrogenation, while in directly milled powders remains mainly unalloyed. After multiple hydrogen absorption/desorption cycles the main part of iron is in metallic state in samples of both types, those of first type preserving better hydrogen desorption kinetics.

  7. Hall conductivity and the vortex phase in MgB2 thin films

    International Nuclear Information System (INIS)

    Jung, Soon-Gil; Seong, W K; Huh, Ji Young; Lee, T G; Kang, W N; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik

    2007-01-01

    In a MgB 2 thin film superconductor, we have found that Hall conductivity (σ xy ) is described by the sum of two terms, σ xy = C 1 /H+C 3 H, where C 1 and C 3 are independent of the magnetic fields and have positive values. C 1 is observed to be proportional to (1-t) n with n = 4.2, where t is the reduced temperature (T/T c ), and C 3 is weakly dependent on the temperature. These results are consistent with those of the overdoped La 2-x Sr x CuO 4 superconductors. Based on Hall angle data, we obtained a vortex phase diagram with three regions, vortex-solid, crossover, and vortex-liquid regions in the H-T plane

  8. Scaling behavior of mixed-state hall effect in MgB2 thin films

    International Nuclear Information System (INIS)

    Jung, Soon-Gil; Seong, W.K.; Kang, W.N.; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik; Kim, Hyeong-Jin; Kim, H.C.

    2006-01-01

    The Hall resistivity (ρ xy ) and the longitudinal resistivity (ρ xx ) in c-axis-oriented superconducting MgB 2 thin films have been investigated in extended fields up to 18T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, ρ xy =Aρ xx β , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18T and a wide temperature region from 10 to 28K, a universal power law with β=2.0+/-0.1 was observed in c-axis-oriented MgB 2 thin films. These results can be well interpreted by using recent models

  9. Measurement of the anisotropy ratios in MgB2 single crystals

    International Nuclear Information System (INIS)

    Kim, Heon-Jung; Kang, Byeongwon; Lee, Hyun-Sook; Lee, Sung-Ik

    2006-01-01

    We present our recent measurements on the anisotropy ratios of MgB 2 single crystals. Our measurements indicate that the anisotropy ratios of the penetration depth and of the upper critical field have different magnitudes and temperature dependences, as predicted by theoretical calculations. These results imply that the two-gap nature can strongly influence the superconducting properties of MgB 2

  10. Comparative study of neutron irradiation and carbon doping in MgB2 single crystals

    International Nuclear Information System (INIS)

    Krutzler, C.; Zehetmayer, M.; Eisterer, M.; Weber, H. W.; Zhigadlo, N. D.; Karpinski, J.

    2007-01-01

    We compare the reversible and irreversible magnetic properties of superconducting carbon doped and undoped MgB 2 single crystals before and after neutron irradiation. A large number of samples with transition temperatures between 38.3 and 22.8 K allows us to study the effects of disorder systematically. Striking similarities are found in the modification of the reversible parameters by irradiation and doping, which are discussed in terms of impurity scattering and changes of the Fermi surface. The irreversible properties are influenced by two counteracting mechanisms: they are enhanced by the newly introduced pinning centers but degraded by changes in the thermodynamic properties. Accordingly, the large neutron induced defects and the small defects from carbon doping lead to significantly different effects on the irreversible properties. Finally, the fishtail effect caused by all kinds of disorder is discussed in terms of an order-disorder transition of the flux-line lattice

  11. Tunneling Spectroscopy of the Energy Gap in MgB2 Under Magnetic Fields

    International Nuclear Information System (INIS)

    Ekino, T.; Takasaki, T.; Fujii, H.; Muranaka, T.; Akimitsu, J.

    2003-01-01

    Effects of magnetic field on the multiple-gap structure in the superconductor MgB 2 have been studied by break junctions. With increasing the field, the gap value decreases with filling up of the states inside of the gap. The gap-closing field B c correlates with the gap size. The extrapolated B c value for the larger gap is almost consistent with the upper critical field of this compound. (author)

  12. New transformation mechanism for a zinc-blende to rocksalt phase transformation in MgS

    International Nuclear Information System (INIS)

    Durandurdu, Murat

    2009-01-01

    The stability of the zinc-blende structured MgS is studied using a constant pressure ab initio molecular dynamics technique. A phase transition into a rocksalt structure is observed through the simulation. The zinc-blende to rocksalt phase transformation proceeds via two rhombohedral intermediate phases within R3m (No:160) and R3-barm (No:166) symmetries and does not involve any bond breaking. This mechanism is different from the previously observed mechanism in molecular dynamics simulations. (fast track communication)

  13. Constant Q measurements of collective modes in Mg70Zn30 glass

    International Nuclear Information System (INIS)

    Benmore, C.J.; Robinson, R.A.; Egelstaff, P.A.; Suck, J.B.

    1997-01-01

    In this study the Neutron Brillouin Scattering technique has been used to measure longitudinal excitations in a magnesium-zinc glass at momentum transfers within the first pseudo-Brillouin zone. The measurements were performed at room temperature and constant momentum transfer, which enables the data to be readily and reliably compared with theory. The experimental results taken down to Q = 6.2 nm -1 and E = 27 meV show a 5 meV downward shift in the dispersion energy of the longitudinal optic mode of the glass when compared to theoretical predictions

  14. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Veen, A. van; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3 He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed

  15. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Science.gov (United States)

    van Veen, A.; Schut, H.; Fedorov, A. V.; Labohm, F.; Neeft, E. A. C.; Konings, R. J. M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2 × 10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  16. Positronic probe of vacancy defects on surfaces of Au nanoparticles embedded in MgO

    International Nuclear Information System (INIS)

    Xu, Jun; Moxom, J.; Somieski, B.; White, C. W.; Mills, A. P.; Suzuki, R.; Ishibashi, S.

    2001-01-01

    Clusters of four atomic vacancies were found in Au nanoparticle-embedded MgO by positron lifetime spectroscopy [Phys. Rev. Lett. 83, 4586 (1999)]. These clusters were also suggested to locate at the surface of Au nanoparticles by one-detector measurements of Doppler broadening of annihilation radiation. In this work we provide evidence, using two-detector coincidence experiments of Doppler broadening (2D-DBAR), to clarify that these vacancy clusters reside on the surfaces of Au nanoparticles. This work also demonstrates a method for identifying defects at nanomaterials interfaces: a combination of both positron lifetime spectroscopy, which tells the type of the defects, and 2D-DBAR measurements, which reveals chemical environment of the defects

  17. Vacancy Clusters on Surfaces of Au Nanoparticles Embedded in MgO

    International Nuclear Information System (INIS)

    Xu, Jun; Mills, A. P. Jr.; Ueda, A.; Henderson, D. O.; Suzuki, R.; Ishibashi, S.

    1999-01-01

    MeV implantation of gold ions into MgO(100) followed by annealing is a method to form gold nanoparticles for obtaining modified optical properties. We show from variable-energy positron spectroscopy that clusters of 2 Mg and 2 O vacancies (v 4 ) are attached to the gold nanoparticle surfaces within the projected range (R p ) . We also find that v 4 vacancy clusters are created at depths less than R p , and extend into the region greater than R p due to damage induced by knock-on collisions. (c) 1999 The American Physical Society

  18. Positronic probe of vacancy defects on surfaces of Au nanoparticles embedded in MgO

    Science.gov (United States)

    Xu, Jun; Moxom, J.; Somieski, B.; White, C. W.; Mills, A. P., Jr.; Suzuki, R.; Ishibashi, S.

    2001-09-01

    Clusters of four atomic vacancies were found in Au nanoparticle-embedded MgO by positron lifetime spectroscopy [Phys. Rev. Lett. 83, 4586 (1999)]. These clusters were also suggested to locate at the surface of Au nanoparticles by one-detector measurements of Doppler broadening of annihilation radiation. In this work we provide evidence, using two-detector coincidence experiments of Doppler broadening (2D-DBAR), to clarify that these vacancy clusters reside on the surfaces of Au nanoparticles. This work also demonstrates a method for identifying defects at nanomaterials interfaces: a combination of both positron lifetime spectroscopy, which tells the type of the defects, and 2D-DBAR measurements, which reveals chemical environment of the defects.

  19. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Veen, A. van E-mail: avveen@iri.tudelft.nl; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M

    1999-01-02

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV {sup 3}He ions with doses varying from 10{sup 15} to 10{sup 16} cm{sup -2} and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10{sup 15} cm{sup -2} annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  20. Stabilization of primary mobile radiation defects in MgF{sub 2} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lisitsyn, V.M. [National Research Tomsk Polytechnic University, pr. Lenina 30, Tomsk 634050 (Russian Federation); Lisitsyna, L.A. [State University of Architecture and Building, pl. Solyanaya 2, Tomsk 634003 (Russian Federation); Popov, A.I., E-mail: popov@ill.fr [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Kotomin, E.A. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Abuova, F.U.; Akilbekov, A. [L.N. Gumilyov Eurasian National University, 3 Munaitpasova Str., Astana (Kazakhstan); Maier, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany)

    2016-05-01

    Non-radiative decay of the electronic excitations (excitons) into point defects (F–H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in rutile MgF{sub 2} and <0.001% in fluorides MeF{sub 2} (Me: Ca, Sr, Ba). The key factor determining accumulation of stable radiation defects is stabilization of primary defects, first of all, highly mobile hole H centers, through their transformation into more complex immobile defects. In this talk, we present the results of theoretical calculations of the migration energies of the F and H centers in poorely studied MgF{sub 2} crystals with a focus on the H center stabilization in the form of the interstitial F{sub 2} molecules which is supported by presented experimental data.

  1. Fundamental and excited states of F-type centres in MgSiO3 perovskite

    International Nuclear Information System (INIS)

    Stashans, Arvids; Piedra, Lorena; Briceno, Tamara

    2010-01-01

    Quantum-chemical modelling based on the Hartree-Fock methodology and a periodic supercell model is done to study oxygen vacancy and F-type centres in the perovskite-type MgSiO 3 crystal. The equilibrium geometry of defects is obtained, confirming the importance of electrostatic interaction in determination of atomic shifts. The calculated relaxation energies due to the defect formation are between 8 and 10 eV, thus evidencing favourability in the occurrence of such defects. The wave functions describing both F + and F centres are rather diffuse and the point defects are not well localised within the oxygen vacancy region. The Δ SCF computed absorption energies due to the F-type centres fall well within the ultraviolet spectrum, between 136 and 254 nm for the F + centre and between 163 and 248 nm for the F centre.

  2. Ion beam synthesis of Fe nanoparticles in MgO and yttria-stabilized zirconia

    Science.gov (United States)

    Potzger, K.; Reuther, H.; Zhou, Shengqiang; Mücklich, A.; Grötzschel, R.; Eichhorn, F.; Liedke, M. O.; Fassbender, J.; Lichte, H.; Lenk, A.

    2006-04-01

    To form embedded Fe nanoparticles, MgO(001) and YSZ(001) single crystals have been implanted at elevated temperatures with Fe ions at energies of 100 keV and 110 keV, respectively. The ion fluence was fixed at 6×1016 cm-2. As a result, γ- and α-phase Fe nanoparticles were synthesized inside MgO and YSZ, respectively. A synthesis efficiency of 100% has been achieved for implantation at 1273 K into YSZ. The ferromagnetic behavior of the α-Fe nanoparticles is reflected by a magnetic hyperfine field of 330 kOe and a hysteretic magnetization reversal. Electron holography showed a fringing magnetic field around some, but not all of the particles.

  3. Ion beam synthesis of Fe nanoparticles in MgO and yttria-stabilized zirconia

    International Nuclear Information System (INIS)

    Potzger, K.; Reuther, H.; Zhou, Shengqiang; Muecklich, A.; Groetzschel, R.; Eichhorn, F.; Liedke, M. O.; Fassbender, J.; Lichte, H.; Lenk, A.

    2006-01-01

    To form embedded Fe nanoparticles, MgO(001) and YSZ(001) single crystals have been implanted at elevated temperatures with Fe ions at energies of 100 keV and 110 keV, respectively. The ion fluence was fixed at 6x10 16 cm -2 . As a result, γ- and α-phase Fe nanoparticles were synthesized inside MgO and YSZ, respectively. A synthesis efficiency of 100% has been achieved for implantation at 1273 K into YSZ. The ferromagnetic behavior of the α-Fe nanoparticles is reflected by a magnetic hyperfine field of 330 kOe and a hysteretic magnetization reversal. Electron holography showed a fringing magnetic field around some, but not all of the particles

  4. Synthesis and characterization of isolated iron oxide nanoparticle dispersed in MgO matrix

    International Nuclear Information System (INIS)

    Choa, Y.-H.; Yang, J.-K.; Yang, W.-J.; Auh, K.-H.

    2003-01-01

    γ-Fe 2 O 3 /MgO nanocomposite powders, which can be used for biomedical, magnetic and the catalytic applications, were fabricated by means of spray pyrolysis using an ultrasonic atomizer. The liquid source was prepared using Fe and Mg nitrates dissolved in pure water. The liquid was atomized using an ultrasonic atomizer and carried into a pre-heated chamber (500-800 deg. C) by air carrier gas. The mist was then decomposed into γ-Fe 2 O 3 and MgO nanopowders. The entire operation was performed at 1 atm. The γ-Fe 2 O 3 /MgO powder was found to be perfectly crystallized at 800 deg. C. The particle size of γ-Fe 2 O 3 /MgO nanocomposite powders prepared at 800 deg. C was about 10 nm for γ-Fe 2 O 3 and MgO, which were calculated by XRD using Scherrer's formula and measured by TEM observation. The samples indicate the presence of superparamagnetic properties and a blocking temperature (T B ) of 125 K

  5. Pinning enhancement in MgB 2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    ... coated with different concentrations of Fe2O3 nanoparticles by spin coating process. ... Turkey; Ereğli Faculty of Education, Primary Education Department, Bülent Ecevit ... Manuscript received: 8 May 2012; Manuscript revised: 22 July 2012 ...

  6. Theoretical study of superconductivity in MgB 2 and its alloys

    Indian Academy of Sciences (India)

    total density of states (DOS) and; the partial DOS around the Fermi energy, F, clearly show the importance of B -electrons for superconductivity. For BeB2 and NaB2, our results indicate qualitative similarities but significant quantitative differences in their electronic structure due to differences in the number of valence ...

  7. Control of core structure in MgB{sub 2} wire through tailoring boron powder

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, Minoru, E-mail: maeda.minoru70@nihon-u.ac.jp [Department of Physics, College of Science and Technology, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Uchiyama, Daisuke [Department of Physics, College of Science and Technology, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Hossain, Md Shahriar Al; Ma, Zongqing [Institute for Superconducting and Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Shahabuddin, Mohammed [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Kim, Jung Ho, E-mail: jhk@uow.edu.au [Institute for Superconducting and Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia)

    2015-07-05

    Highlights: • The typical void structure in the wire is obtained by using large-sized B powder. • In contrast, void alignment can be achieved by using fine B powder. • The sintering at lower temperatures improves the critical current density in fields. - Abstract: A common fabrication process for MgB{sub 2} wire, namely, the in situ powder-in-tube process, forms numerous voids within the wire core, and void formation cannot be completely avoided. The orientation is, however, known to be aligned more or less along the current-flow direction when ductile coarse magnesium powder is used as a precursor, and further tailoring approaches could open up the way to improving the transport critical current density. Herein, we have used boron powders with different particle sizes, in combination with the coarse magnesium powder, and evaluated their size effects on the phase composition, microstructure, and transport properties. A mixture of the coarse magnesium powder with large-sized boron powder in the wire core, after cold working and sintering, forms a granular morphology. In contrast, an aligned core appears during the reduction process for wire which is prepared by using fine boron powder. The sintering process, especially at a low temperature, where magnesium evaporation hardly occurs, yields an aligned structure, mainly consisting of MgB{sub 2} phase, along the wire direction. These findings demonstrate that the initial size of the starting materials is critical for the tailored structure.

  8. Theoretical and Experimental Evidence for a Nodal Energy Gap in MgB2

    Science.gov (United States)

    2017-02-17

    the larger gap, the so-called  gap, is a conventional s wave. The model is an extension of the BCS theory that accounts for the elastic anisotropy...obeys the BCS-theory textbook expression that is characterized by an exponential temperature dependence, specifically,[17,18]    2 TS RESR T R C f...that was based on measurement of the IMD [3]. Accounting for the  energy-gap contribution at higher temperatures lies outside the scope of this work

  9. Radiation-induced defect production in MgF2-Co crystals

    International Nuclear Information System (INIS)

    Nuritdinov, I.; Turdanov, K.; Mirinoyatova, N.M.; Rejterov, V.M.

    1996-01-01

    Impact of Co-admixture on structural radiation defects formation in the MgF 2 crystals is studied. It is found that the Co admixture facilitates the probability of generating the F- and m-type centers of radiation defects as well as creation of the F- and M-centers, perturbed by admixtures. The availability of structural defects leads in its turn to the admixture ions perturbation. It is reflected in the removal of prohibition on spin-prohibited transitions of the Co 2 + ions. It is assumed that creation of the M-centers is the main cause for removal of the prohibition on the spin-prohibited transitions. 8 refs., 4 figs

  10. Phase formation in Mg-Sn-Si and Mg-Sn-Si-Ca alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kozlov, A.; Groebner, J. [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany); Schmid-Fetzer, R., E-mail: schmid-fetzer@tu-clausthal.de [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany)

    2011-02-17

    Research highlights: > The solidification paths of ternary and quaternary alloys are analyzed in detail, using the tool of thermodynamic calculations. > The precipitation sequence of phases and their amounts compare well with the microstructure of alloys. > The most efficient comparison to the experimental thermal analysis data is done by calculation of the enthalpy variation with temperature. > The viability of a procedure for the selection of multicomponent key samples is demonstrated for the development of the Mg-Ca-Si-Sn phase diagram. - Abstract: Experimental work is done and combined with the Calphad method to generate a consistent thermodynamic description of the Mg-Ca-Si-Sn quaternary system, validated for Mg-rich alloys. The viability of a procedure for the selection of multicomponent key samples is demonstrated for this multicomponent system. Dedicated thermal analysis with DTA/DSC on sealed samples is performed and the microstructure of slowly solidified alloys is analyzed using SEM/EDX. The thermodynamic description and phase diagram of the ternary Mg-Si-Sn system, developed in detail also in this work, deviates significantly from a previous literature proposal. The phase formation in ternary and quaternary alloys is analyzed using the tool of thermodynamic equilibrium and Scheil calculations for the solidification paths and compared with present experimental data. The significant ternary/quaternary solid solubilities of pertinent intermetallic phases are quantitatively introduced in the quaternary Mg-Ca-Si-Sn phase diagram and validated by experimental data.

  11. Pinning enhancement in MgB2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    The magnetic field dependence of the critical current density Jc was calculated from the M–H loops and magnetic field dependence of ... MgB2 thin film; Fe2O3 nanoparticles; critical current density; r-plane Al2O3 substrate. 1. Introduction. The discovery of ... It was thought that from these cal- culations, one can choose an ...

  12. In situ corrosion analysis of Al-Zn-In-Mg-Ti-Ce sacrificial anode alloy

    International Nuclear Information System (INIS)

    Ma Jingling; Wen Jiuba; Zhai Wenxia; Li Quanan

    2012-01-01

    The corrosion behaviour of Al-5Zn-0.02In-1Mg-0.05Ti-0.5Ce (wt.%) alloy has been investigated by immersion test, scanning electron microscopy, energy dispersive X-ray detector, electrochemical impedance spectroscopy and electrochemical noise. The results show that there exist different corrosion types of the alloy in 3.5% NaCl solution with the immersion time. At the initial stage of immersion, pitting due to the precipitates predominates the corrosion with a typical inductive loop at low frequencies in electrochemical impedance spectroscopy. The major precipitates of the alloy are MgZn 2 and Al 2 CeZn 2 particles. The corrosion potentials of the bulk MgZn 2 and Al 2 CeZn 2 alloys are negative with respect to that of α-Al, so the MgZn 2 and Al 2 CeZn 2 precipitates can act as activation centre and cause the pitting. In the late corrosion, a relative uniform corrosion predominates the corrosion process controlled by the dissolution/precipitation of the In ions and characterized by a capacitive loop at medium-high frequencies in electrochemical impedance spectroscopy. The potential noise of the pitting shows larger amplitude fluctuation and lower frequency, but the potential noise of the uniform corrosion occurs with smaller amplitude fluctuation and higher frequency.

  13. Aluminum and carbon substitution in MgB2. Electron doping and scattering effects

    International Nuclear Information System (INIS)

    Samuely, P.; Szabo, P.; Pribulova, Z.; Angst, M.; Bud'ko, S.L.; Canfield, P.C.; Klein, T.; Lyard, L.; Marcus, J.; Marcenat, C.; Kang, B.W.; Kim, H.-J.; Lee, H.-S.; Lee, H.-K.; Lee, S.I.

    2007-01-01

    The point-contact spectroscopy is used to address the evolution of two superconducting energy gaps in the Al- and C-doped magnesium diboride polycrystals and single crystals with T c 's from 39 to 22 K prepared by different techniques. The obtained evolution of two gaps does not show any anomalous behavior but can be consistently described by the combination of the (prevailing) band filling effect and a (minor) increased interband scattering as proposed by Kortus et al. [Kortus et al., Phys. Rev. Lett. 94 (2005) 027002]. The approaching of two gaps is stronger in the Al-doped systems but interband scattering is still not large enough to merge two gaps. The full merging can expected only for higher dopings with T c 's below 10-15 K. In-magnetic-field measurements are used to analyze the intraband scatterings introduced by these two substitutions. It is shown that the carbon doping introduces significant disorder mainly by decreasing the diffusion coefficient in the π band while the Al substitution leaves the samples in the clean limit

  14. Atomistic simulation study of the shear-band deformation mechanism in Mg-Cu metallic glasses

    DEFF Research Database (Denmark)

    Bailey, Nicholas; Schiøtz, Jakob; Jacobsen, Karsten Wedel

    2006-01-01

    We have simulated plastic deformation of a model Mg-Cu metallic glass in order to study shear banding. In uniaxial tension, we find a necking instability occurs rather than shear banding. We can force the latter to occur by deforming in plane strain, forbidding the change of length in one...... of the transverse directions. Furthermore, in most of the simulations a notch is used to initiate shear bands, which lie at a 45 degrees angle to the tensile loading direction. The shear bands are characterized by the Falk and Langer local measure of plastic deformation D-min(2), averaged here over volumes...... observe a slight decrease in density, up to 1%, within the shear band, which is consistent with notions of increased free volume or disorder within a plastically deforming amorphous material....

  15. Transverse acoustic phonon anomalies at intermediate wave vectors in MgV2O4

    Science.gov (United States)

    Weber, T.; Roessli, B.; Stock, C.; Keller, T.; Schmalzl, K.; Bourdarot, F.; Georgii, R.; Ewings, R. A.; Perry, R. S.; Böni, P.

    2017-11-01

    Magnetic spinels (with chemical formula A X2O4 , with X a 3 d transition metal ion) that also have an orbital degeneracy are Jahn-Teller active and hence possess a coupling between spin and lattice degrees of freedom. At high temperatures, MgV2O4 is a cubic spinel based on V3 + ions with a spin S =1 and a triply degenerate orbital ground state. A structural transition occurs at TOO=63 K to an orbitally ordered phase with a tetragonal unit cell followed by an antiferromagnetic transition of TN=42 K on cooling. We apply neutron spectroscopy in single crystals of MgV2O4 to show an anomaly for intermediate wave vectors at TOO associated with the acoustic phonon sensitive to the shear elastic modulus (C11-C12)/2 . On warming, the shear mode softens for momentum transfers near close to half the Brillouin zone boundary, but recovers near the zone center. High resolution spin-echo measurements further illustrate a temporal broadening with increased temperature over this intermediate range of wave vectors, indicative of a reduction in phonon lifetime. A subtle shift in phonon frequencies over the same range of momentum transfers is observed with magnetic fields. We discuss this acoustic anomaly in context of coupling to orbital and charge fluctuations.

  16. Phase dynamics of single long Josephson junction in MgB2 superconductor

    Science.gov (United States)

    Chimouriya, Shanker Pd.; Ghimire, Bal Ram; Kim, Ju H.

    2018-05-01

    A system of perturbed sine Gordon equations is derived to a superconductor-insulator-superconductor (SIS) long Joseph-son junction as an extension of the Ambegaokar-Baratoff relation, following the long route of path integral formalism. A computer simulation is performed by discretizing the equations using finite difference approximation and applied to the MgB2 superconductor with SiO2 as the junction material. The solution of unperturbed sG equation is taken as the initial profile for the simulation and observed how the perturbation terms play the role to modify it. It is found initial profile deformed as time goes on. The variation of total Josephson current has also been observed. It is found that, the perturbation terms play the role for phase frustration. The phase frustration achieves quicker for high tunneling current.

  17. Characterisation of nano-grains in MgB2 superconductors by transmission Kikuchi diffraction

    International Nuclear Information System (INIS)

    Wong, D.C.K.; Yeoh, W.K.; Trimby, P.W.; De Silva, K.S.B.; Bao, P.; Li, W.X.; Xu, X.; Dou, S.X.; Ringer, S.P.; Zheng, R.K.

    2015-01-01

    We report the first application of the emerging transmission Kikuchi diffraction technique in the scanning electron microscope to investigate nano-grain structures in polycrystalline MgB 2 superconductors. Two sintering conditions were considered, and the resulting differences in superconducting properties are correlated to differences in grain structure. A brief comparison to X-ray diffraction results is presented and discussed. This work focusses more on the application of this technique to reveal grain structure, rather than on the detailed differences between the two sintering temperatures

  18. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

    OpenAIRE

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

    2014-01-01

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical...

  19. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.

    Science.gov (United States)

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S; Saeys, Mark; Yang, Hyunsoo

    2014-09-30

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

  20. Mesoscale Modeling of Kinetic Phase Behaviors in Mg-B-H (Subcontract Report)

    Energy Technology Data Exchange (ETDEWEB)

    Yu, H. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Thornton, K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Wood, B. C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-10-13

    Storage of hydrogen on board vehicles is one of the critical enabling technologies for creating hydrogenfueled transportation systems that can reduce oil dependency and mitigate the long-term effects of fossil fuels on climate change. Stakeholders in developing hydrogen infrastructure are currently focused on highpressure storage at 350 bar and 700 bar, in part because no viable solid-phase storage material has emerged. Nevertheless, solid-state materials, including high-density hydrides, remain of interest because of their unique potential to meet all DOE targets and deliver hydrogen at lower pressures and higher on-board densities. A successful solution would significantly reduce costs and ensure the economic viability of a U.S. hydrogen infrastructure. The Mg(BH4)2-MgB2 system represents a highly promising solution because of its reasonable reaction enthalpy, high intrinsic capacity, and demonstrated reversibility, yet suffers from poor reaction kinetics. This subcontract aims to deliver a phase-field model for the kinetics of the evolution of the relevant phases within the Mg-B-H system during hydrogenation and dehydrogenation. This model will be used within a broader theory, synthesis, and characterization framework to study the properties of geometry-selected nanoparticles of pristine and doped MgB2/Mg(BH4)2 with two aims: (1) understand the intrinsic limitations in (de)hydrogenation; (2) devise strategies for improving thermodynamics and kinetics through nanostructuring.

  1. Grain refinement efficiency and mechanism of aluminium carbide in Mg-Al alloys

    International Nuclear Information System (INIS)

    Lu, L.; Dahle, A.K.; StJohn, D.H.

    2005-01-01

    Detailed microscopic examination using optical and electron microscopes suggests that Al 4 C 3 , often observed in the central regions of magnesium grains on polished sections, is a potent substrate for primary Mg. Calculations of the crystallographic relationships between magnesium and Al 4 C 3 further support the experimental observations

  2. Direct observation of grafting interlayer phosphate in Mg/Al layered double hydroxides

    International Nuclear Information System (INIS)

    Shimamura, Akihiro; Kanezaki, Eiji; Jones, Mark I.; Metson, James B.

    2012-01-01

    The grafting of interlayer phosphate in synthetic Mg/Al layered double hydroxides with interlayer hydrogen phosphate (LDH-HPO 4 ) has been studied by XRD, TG/DTA, FT-IR, XPS and XANES. The basal spacing of crystalline LDH-HPO 4 decreases in two stages with increasing temperature, from 1.06 nm to 0.82 nm at 333 K in the first transition, and to 0.722 nm at 453 K in the second. The first stage occurs due to the loss of interlayer water and rearrangement of the interlayer HPO 4 2− . In the second transition, the interlayer phosphate is grafted to the layer by the formation of direct bonding to metal cations in the layer, accompanied by a change in polytype of the crystalline structure. The grafted phosphate becomes immobilized and cannot be removed by anion-exchange with 1-octanesulfonate. The LDH is amorphous at 743 K but decomposes to Mg 3 (PO 4 ) 2 , AlPO 4 , MgO and MgAl 2 O 4 after heated to 1273 K. - Graphical abstract: The cross section of the synthetic Mg, Al layered double hydroxides in Phase 1, with interlayer hydrogen phosphate Phase 2, and with grafted phosphate, Phase 3. Highlights: ► The grafting of hydrogen phosphate intercalated Mg/Al-LDH has been studied. ► The basal spacing of crystalline LDH-HPO 4 decreases in two stages with increasing temperature. ► The first decrease is due to loss of interlayer water, the second is attributed to phosphate grafting. ► The grafted interlayer phosphate becomes immobilized and cannot be removed by anion-exchange.

  3. Hydrogen diffusion in Mg2NiH4 intermetallic compound

    Czech Academy of Sciences Publication Activity Database

    Čermák, Jiří; Král, Lubomír; David, Bohumil

    2008-01-01

    Roč. 16, č. 4 (2008), s. 508-517 ISSN 0966-9795 R&D Projects: GA ČR GA106/07/0010 Institutional research plan: CEZ:AV0Z20410507 Keywords : diffusion * hydrogen storage * phase transformations Subject RIV: BJ - Thermodynamics Impact factor: 2.034, year: 2008

  4. Dislocations and Plastic Deformation in MgO Crystals: A Review

    Directory of Open Access Journals (Sweden)

    Jonathan Amodeo

    2018-05-01

    Full Text Available This review paper focuses on dislocations and plastic deformation in magnesium oxide crystals. MgO is an archetype ionic ceramic with refractory properties which is of interest in several fields of applications such as ceramic materials fabrication, nano-scale engineering and Earth sciences. In its bulk single crystal shape, MgO can deform up to few percent plastic strain due to dislocation plasticity processes that strongly depend on external parameters such as pressure, temperature, strain rate, or crystal size. This review describes how a combined approach of macro-mechanical tests, multi-scale modeling, nano-mechanical tests, and high pressure experiments and simulations have progressively helped to improve our understanding of MgO mechanical behavior and elementary dislocation-based processes under stress.

  5. Raman study of electronic excitations in MgB2 with application of high magnetic field

    International Nuclear Information System (INIS)

    Machtoub, L.; Takano, Y.; Kito, H.

    2006-01-01

    We present the first results of Raman scattering with application of magnetic field on magnesium diboride (MgB 2 ). In this work, we have investigated the magnetic field dependence of the 72 meV (E 2g mode) and the pair-breaking peak around 100 cm -1 which corresponds to σ-band gap. Intensity enhancement of Raman features around 800 cm -1 accompanied with broadening in the line shape of E 2g mode has been observed in some polycrystalline samples at 0 GPa. Results are compared with previous Raman study under hydrostatic pressure

  6. Raman and NMR study in MgO-doped LiNbO3 crystal

    International Nuclear Information System (INIS)

    Hu, L.J.; Chang, Y.H.; Chang, C.S.; Yang, S.J.; Hu, M.L.; Tse, W.S.

    1991-01-01

    This paper reports on the MgO-doped LiNbO 3 crystal grown and studied by NMR and Raman techniques. The solubility of MgO in the LiNbO 3 crystal is as much as 30 mole %. It is shown in NMR spectra that the number of Nb 5+ cations at A-site (Li-site) decrease as Mg concentration increased when the Mg content is lower than 5 mole %. The vibration of (NbO 6 ) octahedron and translations involving Li + and Mg 2+ cations motion can be identified by replacing Nb 5+ and Li + cations with Ta 5+ and Mg 2+ cations through Raman spectra. The 115 cm -1 and 151 cm -1 peaks are due to the translational modes of Mg 2+ and Li + cations. The doping mechanisms of MgO are proposed

  7. The charge transfer induced by Cr doping in MgB2

    International Nuclear Information System (INIS)

    Zhang Huarong; Zhao Jiyin; Shi Lei

    2005-01-01

    Mg 1-x Cr x B 2 polycrystal bulk samples with 0 x 5% have been synthesized by a solid-state reaction and studied by X-ray diffraction, SEM and Raman spectrum. It is found that the c-axis of the lattice decreases as the Cr content increases, while the a-axis remains unchanged. Moreover, crystal grain size increases apparently with Cr doping concentration increase. The normal-state resistivity increases and the superconducting transition temperature (T c ) decreases from 38.2 K (x = 0) to 35.1 K (x 0.03) with the increase of Cr content. It is suggested that the charge transfer between the Mg-layer and the B-layer causes the decrease of the charge carrier concentration and induces the changes of T c and normal-state resistivity. On the other hand, by the Raman scattering study, it is found that the linewidth of Raman spectrum increases with the increase of Cr content, which is resulted by the competition between the electron-phonon interaction and substitution-induced disorder. The Raman peak has no evident shift due to the countervailing between the effects of the electron-phonon coupling and the grain size

  8. Defect structures in MgB2 wires introduced by hot isostatic pressing

    International Nuclear Information System (INIS)

    Liao, X Z; Serquis, A; Zhu, Y T; Civale, L; Hammon, D L; Peterson, D E; Mueller, F M; Nesterenko, V F; Gu, Y

    2003-01-01

    The microstructures of MgB 2 wires prepared by the powder-in-tube technique and subsequent hot isostatic pressing were investigated using transmission electron microscopy. A large amount of crystalline defects including small-angle twisting, tilting and bending boundaries, in which high densities of dislocations reside, was found forming sub-grains within MgB 2 grains. It is believed that these defects resulted from particle deformation during the hot isostatic pressing process and are effective flux pinning centres that contribute to the high critical current densities of the wires at high temperatures and at high fields

  9. Order-disorder transition of vortex matter in Mg0.95B2

    International Nuclear Information System (INIS)

    Oliveira, A.A.M.; Sharma, P.A.; Hur, N.; Cheong, S-W.; Ortiz, W.A.

    2008-01-01

    Third-harmonic susceptibility has been employed to probe the order-disorder transition of vortex matter of a good-quality sample of MgB 2 with random disorder. In the major part of the temperature interval, the measured boundary line can be adjusted by a power-law function, in accordance with theoretical models for the melting of the ordered phase of a 3D vortex-glass. For larger temperatures, however, thermally-induced depinning anticipates disorder, which is also predictable for the vortex matter behavior of a clean system with small amounts of randomly distributed disorder, as is the case of the Mg 0.95 B 2 sample studied here

  10. Magnetic relaxation induced by transverse flux shaking in MgB{sub 2} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luzuriaga, J; Nieva, G; Serquis, A; Serrano, G [Centro Atomico Bariloche, CNEA, Instituto Balseiro, UNC (Argentina); BadIa-Majos, A [Departamento de Fisica de la Materia Condensada-ICMA, Universidad de Zaragoza-CSIC (Spain); Giordano, J L [Departamento de Ciencias de la IngenierIa, Universidad de Talca (Chile); Lopez, C [Departamento de Matematicas, Universidad de Alcala de Henares (Spain)], E-mail: luzuriag@cab.cnea.gov.ar

    2009-01-15

    We report on measurements and numerical simulations of the behavior of MgB{sub 2} superconductors when magnetic field components are applied along mutually perpendicular directions. By closely matching the geometry in simulations and measurements, full quantitative agreement is found. The critical state theory and a single phenomenological law, i.e. the field dependence of the critical current density J{sub c}(B), are sufficient for a full quantitative description of the measurements. These were performed in thick strips of carbon nanotube doped MgB{sub 2} samples. Magnetization was measured in two orthogonal directions using a SQUID magnetometer. Magnetic relaxation effects induced by the application of an oscillatory perpendicular field were observed and simulated numerically. The measurements confirm the numerical predictions, that two relaxation regimes appear, depending on the amplitude of the applied magnetic field. The overall agreement constitutes a convincing validation of the critical state model and the numerical procedures used.

  11. Experimental and numerical study of transverse flux shaking in MgB{sub 2} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luzuriaga, J; Nieva, G; Serquis, A; Serrano, G [Centro Atomico Bariloche, CNEA, Inst. Balseiro, UNC (Argentina); BadIa-Majos, A [Dep. de Fisica de la Materia Condensada-ICMA, Universidad de Zaragoza-CSIC (Spain); Giordano, J L [Departamento de Ciencias de la IngenierIa, Universidad de Talca (Chile); Lopez, C, E-mail: luzuriag@cab.cnea.gov.a [Dep. Matematicas, Universidad de Alcala de Henares (Spain)

    2009-05-01

    Magnetization measurements in the mixed state of thick strips of carbon nanotube doped MgB{sub 2} in crossed fields configurations are reported, together with numerical simulations performed with a geometry equivalent to the sample shape. The samples were subjected to magnetic field components along mutually perpendicular directions, an oscillatory field in one direction and a remanent magnetization in the perpendicular direction. The magnetic response along the oscillatory field and the magnetic relaxation perpendicular to it are observed and simulated using the critical state theory. A remarkable quantitative agreement between the experiment and the theory was obtained.

  12. Radiation-induced electrical conductivity in MgAl2O4 spinel

    International Nuclear Information System (INIS)

    Pells, G.P.

    1990-12-01

    The d.c. electrical conductivity of high purity, polycrystalline MgAl 2 O 4 spinel of 99.5% theoretical density has been measured during irradiation by 18 MeV protons at reactor relevant ionization dose rates. The radiation-induced conductivity (RIC) at 200 C varied in a slightly sub-linear manner with dose rate. At temperatures between 250-350 C the RIC varied in a complex manner with the dose rate dependence being itself dose rate dependent. At higher temperatures the RIC reverted to an essentially linear variation with dose rate. The complex dose rate dependence is ascribed to the magnesium vacancy concentration introduced by the small Al 2 O 3 excess (MgO:Al 2 O = 1:1.05) and the presence of anti-structure defects producing large concentrations of intrinsic electron and hole traps. There was no evidence that the accumulation of radiation damage influenced the details of radiation-induced conductivity and MgAl 2 O 4 retained reasonable insulating properties at the highest dose rate and temperature. (author)

  13. Stacking faults and phase changes in Mg-doped InGaN grown on Si

    International Nuclear Information System (INIS)

    Liliental-Weber, Zuzanna; Yu, Kin M.; Reichertz, Lothar A.; Ager, Joel W.; Walukiewicz, Wladek; Schaff, William J.; Hawkridge, Michael E.

    2009-01-01

    We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in In x Ga 1-x N layers doped with Mg grown by molecular beam epitaxy on Si(111) substrates with AlN buffer layers. Several samples with varying In content between x∝0.1 and x∝0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High-resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in In x Ga 1-x N alloys. We also consider the role of In in the formation of these defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Thickness dependence of J_c (0) in MgB_2 films

    International Nuclear Information System (INIS)

    Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

    2016-01-01

    Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

  15. Terahertz plasmon-induced transparency based on asymmetric dual-disk resonators coupled to a semiconductor InSb waveguide and its biosensor application

    Science.gov (United States)

    Shahamat, Yadollah; Vahedi, Mohammad

    2017-06-01

    An ultracompact double eight-shaped plasmonic structure for the realization of plasmon-induced transparency (PIT) in the terahertz (THz) region has been studied. The device consists of a semiconductor-insulator-semiconductor bus waveguide coupled to the dual-disk resonators. Indium antimonide is employed to excite SPP in the THz region. The transmission characteristics of the proposed device are simulated numerically by the finite-difference time-domain method. In addition, a theoretical analysis based on the coupled-mode theory for transmission features is presented and compared with the numerical results. Results are in good agreement. Also, the dependence of PIT frequency characteristics on the radius of the outer disk is discussed in detail. In addition, by removing one of the outer disk resonators, double-PIT peaks can be observed in the transmission spectrum, and the physical mechanism of the appeared peaks is investigated. Finally, an application of the proposed structure for distinguishing different states of DNA molecules is discussed. Results show that the maximum sensitivity with 654 GHz/RIU-1 could be obtained for a single PIT structure. The frequency shifts equal to 37 and 99 GHz could be observed for the denatured and the hybridized DNA states, respectively.

  16. A Study of the Irradiance- and Temperature-Dependence of Mid-Wave-Infrared (MWIR) Absorption in Indium Antimonide (InSb)

    Science.gov (United States)

    2008-08-01

    Direct valence to conduction band transitions (constant k vector ), (B) Indirect valence to conduction band transitions aided by photon/phonon coupling...feilddt g g dk dk dE dxdk qE dt dt v d v dt→ = = = − h h 1 (2.7) and g dx v dt = , which means that feild dk qE dt = −h . In order to find the...x B k xΨ = + where A and B are variables that are solved, kx is the wave vector and x is the distance. For a realistic solution, the wave function

  17. Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in Sb2Te3/Bi2Te3 heterojunctions

    Science.gov (United States)

    Aramberri, H.; Muñoz, M. C.

    2017-05-01

    We investigate the effects of strain on the topological order of the Bi2Se3 family of topological insulators by ab initio first-principles methods. Strain can induce a topological phase transition and we present the phase diagram for the 3D topological insulators, Bi2Te3 , Sb2Te3 , Bi2Se3 , and Sb2Se3 , under combined uniaxial and biaxial strain. Their phase diagram is universal and shows metallic and insulating phases, both topologically trivial and nontrivial. In particular, uniaxial tension can drive the four compounds into a topologically trivial insulating phase. We propose a Sb2Te3/Bi2Te3 heterojunction in which a strain-induced topological interface state arises in the common gap of this normal insulator-topological insulator heterojunction. Unexpectedly, the interface state is confined in the topologically trivial subsystem and is physically protected from ambient impurities. It can be switched on or off by means of uniaxial strain and therefore Sb2Te3 /Bi2Te3 heterojunctions provide a topological system which hosts tunable robust helical interface states with promising spintronic applications.

  18. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

    International Nuclear Information System (INIS)

    Romanov, V. V.; Dement’ev, P. A.; Moiseev, K. D.

    2016-01-01

    Indium-antimonide quantum dots (7–9 × 10"9 cm"2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

  19. Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb.

    Science.gov (United States)

    Singh, Bipin K; Pandey, Praveen C

    2016-07-20

    Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue-Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.

  20. Thermal expansion and strength characteristics of interatomic bonds in melts of A3 B5 (Al Sb, In Sb, Ga Sb, In As, Ga As) compounds

    International Nuclear Information System (INIS)

    Glazov, V.M.; Shchelikov, O.D.

    1998-01-01

    Temperature dependence of specific volume of the A 3 B 5 compounds melts is studied thermometrically and through the method of the penetrating γ radiation. Evaluation of melts thermal expansion coefficients under different temperatures is carried out. Estimates of the Debye characteristic temperatures and mean square dynamic shifts of atoms in the close order structure of the A 3 B 5 compounds melts are conducted on the basis of the obtained results

  1. Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb

    Science.gov (United States)

    Li, Tingxin; Wang, Pengjie; Sullivan, Gerard; Lin, Xi; Du, Rui-Rui

    2017-12-01

    We report low-temperature transport measurements in strained InAs /G a0.68I n0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.

  2. Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

    Directory of Open Access Journals (Sweden)

    Hyeona Mun

    2015-03-01

    Full Text Available The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb and dopants (Fe. An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

  3. Radioisotope space power generator. Annual report, October 1978-September 1979

    International Nuclear Information System (INIS)

    Elsner, N.B.; Chin, J.; Staley, H.G.; Bass, J.C.; Morris, C.C.; Shearer, C.H.; Steeger, E.J.

    1982-03-01

    The emphasis of the Isotec Technology Program shifted from development of a Galileo generator to study of a segmented selenide element and couple technology. The goal of the FY 79 program was to determine the feasibility of fabricating segmented selenide P and N elements which exploit the high thermoelectric efficiency of (Cu,Ag) 2 Se and Gd 2 Se 3 materials. A preliminary evaluation of segmented element efficiencies, material compatibilities, and fabrication abilities was used to select (Cu,Ag) 2 Se/Fe(Bi,Sb) 2 Te 3 for the P element and Gd 2 Se 3 /PbTe for the N element. The iron barrier between the (Cu,Ag) 2 Se and (Bi,Sb) 2 Te 3 prevented degradation of thermoelectric properties from copper contamination of the (Bi,Sb) 2 Te 3 . Fabrication processes for both elements were developed. Gd 2 Se 3 was friable and difficult to fabricate crack-free. It also exhibited a phase transition from cubic to orthorhombic, which increased its susceptibility to microcracking and reduced its thermoelectric efficiency. Life testing of an all-bonded couple with unsegmented (Cu,Ag) 2 Se P-type and Gd 2 Se 3 N-type elements was stopped after 3300 h in a nominal 830 0 C/390 0 C thermal gradient. The Gd 2 Se 3 leg did not show any significant degradation during the test. Examination of the hot end of the P element showed the need for a less reactive hot cap material and an improved vapor supression system. Module testing of a 1-W (Bi,Sb) 2 (Se,Te) 3 generator was performed for 5000 h with no degradation in power. High-temperature Thermid 600 adhesive curing cycles were examined, 75-mW module loading tests were performed, and diagnostic examination of RTG-2A and RTG-201 was completed

  4. Influence of the crystallographic structure of the electrode surface on the structure of the electrical double layer and adsorption of organic molecules

    International Nuclear Information System (INIS)

    Kochorovski, Z.; Zagorska, I.; Pruzhkovska-Drakhal, R.; Trasatti, S.

    1995-01-01

    The results of systematic investigation of influence of crystal structure of Bi-, Sb- and Cd-electrode surfaces on regularities of double electric layer structure in aqueous and nonaqueous solutions of surface-nonactive electrolyte are given. Influence of electrode surface characteristics on adsorptive behaviour of different organic molecules has been studied. General regularities of of chemical nature influence and surface crystallographic structure on the double layer structure and on organic compounds adsorption have been established. 57 refs., 7 figs., 4 tabs

  5. Investigation of the chemical vicinity of defects in Mg and AZ31 with positron coincident Doppler boarding spectroscopy

    International Nuclear Information System (INIS)

    Stadlbauer, Martin

    2008-01-01

    Within the scope of the present work, two main goals have been achieved: Firstly, the coincident Doppler broadening spectrometer (CDBS) at the high intense positron source NEPOMUC has been elaborately improved in order to increase the spatial resolution for defect mapping measurements and to investigate samples with shallow positron trapping sites which are present e. g. in magnesium. Secondly, as an application, the chemical vicinity of defects in the industrially used magnesium based alloy AZ31 has been examined by means of the detailed investigation of ion-irradiated specimen with positron annihilation spectroscopy. Detailed simulations with the finite-element simulation tool COMSOL were used to optimize the focal diameter of the positron beam at the sample position in order to increase the spatial resolution. With a value of 0.3 mm, sub-mm resolution has now been reached. The CDBS has been furthermore equipped with a sample cooling unit in order to reach liquid nitrogen temperature, maintaining the feature of scanning the sample for defect mapping. Defects and their chemical surrounding in ion irradiated magnesium and the magnesium based alloy AZ31 were then investigated on an atomic scale with the CDBS. In the respective spectra the chemical information and the defect contribution have been thoroughly separated. For this purpose, samples of annealed Mg were irradiated with Mg-ions in order to create exclusively defects. In addition Al- and Zn-ion irradiations on Mg-samples were performed in order to create samples with both defects and impurity atoms. The ion irradiated area on the samples was investigated with laterally and depth resolved positron Doppler broadening spectroscopy (DBS) and compared with SRIM-simulations of the vacancy distribution. The investigation of the chemical vicinity of crystal defects in AZ31 was performed with CDBS on Mg-ion irradiated AZ31 with Mg-ion irradiated Mg. The outer tail of the energy distribution in the annihilation radiation line in those samples was compared revealing the signal from the high momenta of inner shell electrons characteristic for the chemical element. In these spectra no difference was observed for properly normalized data between ion-irradiated Mg and AZ31. Despite the high defect mobility, no formation of solute-vacancy complexes was found due to the ion irradiation in contrast to for example Fe-Cu-alloys after fast neutron bombardment, where Cu-vacancy complexes are formed. DBSas well as CDBS-measurements on a Zn-ion irradiated Mg-sample at liquid nitrogen temperature led to the educated guess that at least two different types of defects were produced by the irradiation procedure. (orig.)

  6. Investigation of the chemical vicinity of defects in Mg and AZ31 with positron coincident Doppler boarding spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stadlbauer, Martin

    2008-03-10

    Within the scope of the present work, two main goals have been achieved: Firstly, the coincident Doppler broadening spectrometer (CDBS) at the high intense positron source NEPOMUC has been elaborately improved in order to increase the spatial resolution for defect mapping measurements and to investigate samples with shallow positron trapping sites which are present e. g. in magnesium. Secondly, as an application, the chemical vicinity of defects in the industrially used magnesium based alloy AZ31 has been examined by means of the detailed investigation of ion-irradiated specimen with positron annihilation spectroscopy. Detailed simulations with the finite-element simulation tool COMSOL were used to optimize the focal diameter of the positron beam at the sample position in order to increase the spatial resolution. With a value of 0.3 mm, sub-mm resolution has now been reached. The CDBS has been furthermore equipped with a sample cooling unit in order to reach liquid nitrogen temperature, maintaining the feature of scanning the sample for defect mapping. Defects and their chemical surrounding in ion irradiated magnesium and the magnesium based alloy AZ31 were then investigated on an atomic scale with the CDBS. In the respective spectra the chemical information and the defect contribution have been thoroughly separated. For this purpose, samples of annealed Mg were irradiated with Mg-ions in order to create exclusively defects. In addition Al- and Zn-ion irradiations on Mg-samples were performed in order to create samples with both defects and impurity atoms. The ion irradiated area on the samples was investigated with laterally and depth resolved positron Doppler broadening spectroscopy (DBS) and compared with SRIM-simulations of the vacancy distribution. The investigation of the chemical vicinity of crystal defects in AZ31 was performed with CDBS on Mg-ion irradiated AZ31 with Mg-ion irradiated Mg. The outer tail of the energy distribution in the annihilation radiation line in those samples was compared revealing the signal from the high momenta of inner shell electrons characteristic for the chemical element. In these spectra no difference was observed for properly normalized data between ion-irradiated Mg and AZ31. Despite the high defect mobility, no formation of solute-vacancy complexes was found due to the ion irradiation in contrast to for example Fe-Cu-alloys after fast neutron bombardment, where Cu-vacancy complexes are formed. DBSas well as CDBS-measurements on a Zn-ion irradiated Mg-sample at liquid nitrogen temperature led to the educated guess that at least two different types of defects were produced by the irradiation procedure. (orig.)

  7. Optical properties of Ni2+ and radiation defects in MgF sub 2 and MnF sub 2

    Science.gov (United States)

    Feuerhelm, L. N.

    1980-03-01

    The radiation defects in pure MgF2 were made by observating the polarized absorption, luminescence, and excitation spectra in electron-irradiated MgF2. Additionally, studies of the absorption, emission, excitation, and temperature dependence of the lifetimes of transitions in nickel-doped MgF2 and MnF2 were accomplished, as well as the observation of radiation effects on these crystals. The absorption band at about 320 nm in irradiated MgF2 is identified to be due to the F2(D2b) center, and to have an emission at about 450 nm. Analysis of the temperature dependence of this band indicates a dominant phonon mode of 255 cm(-1) for the excited state. The F2(C1) center is identified with an absorption of about 360 nm and an emission of 410 nm. An absorption peak at 300 nm, for which no corresponding emission was found, is tentatively identified to be the F3-center, and to have a dominant phonon mode of 255 cm(-1). The temperature dependence of the lifetimes of transitions in nickel-doped MgF2 is analyzed by the quantum mechanical single configuration coordinate model of Struck and Fonger, and a complete configuration coordinate model is made for this crystal. Similar studies are made in MnF2:Ni.

  8. Mechanism of phase transformations in Mg-based alloys subjected to plasma immersion ion implantation of Ag

    International Nuclear Information System (INIS)

    Kutsenko, Larisa; Fuks, David; Kiv, Arnold; Talianker, Michael; Burlaka, Ljubov; Monteiro, Othon; Brown, Ian

    2006-01-01

    The formation of a new phase of composition Mg 54 Al 28 Ag 18 was observed as a result of plasma immersion ion implantation of Ag into the compound Mg 17 Al 12 . The new structure was characterized using a micro-beam diffraction technique. It was found that the implantation-induced phase transition occurs when the retained dose of the implanted ions is within the range of about 10 15 -10 16 ions/cm 2 . The implanted system has been studied theoretically by means of density-functional electronic structure calculations and a new ab initio approach has been developed to evaluate the specific concentrations of the implanted ions that might cause the phase transition effect in the implanted matrix. The theoretically estimated values of concentrations are in good agreement with experimental observations

  9. Correlation of superconducting properties and microstructure in MgB{sub 2} using SEM, EPMA and TEM

    Energy Technology Data Exchange (ETDEWEB)

    Birajdar, Balaji I.

    2008-04-14

    This thesis can be subdivided as follows: (I) Development of the quantitative electron microscopy and spectroscopy methods essential for the microstructural analysis of MgB{sub 2} and thereby assess the performance of two energy-filtered TEMs. (II) Application of these methods to few selected samples: (a) Pure and Al-alloyed MgB{sub 2} bulk samples prepared by solid-state reaction or by mechanical alloying, (b) In-situ and ex-situ MgB{sub 2} wires and tapes with and without SiC additives prepared by different variants of the powder-in-tube technology. Quantitative B analysis by EDX spectroscopy was applied in the SEM and TEM, which is a major achievement. (III) Establishing a model which quantitatively explains the correlation between microstructure and critical current density as a function of magnetic field. The actual Al mole fraction in the MgB{sub 2} matrix was found to be less than the nominal Al mole fraction and the difference increased with increasing Al mole fraction. Al is incorporated into MgB{sub 2} grains of {approx}1{mu}m size by substitution of Mg atoms causing T{sub c} and c lattice parameter to decrease at a rate of 1.56 K and 1.15 pm per at.% of Al alloying. Precipitation of Al was not detected up to highest Al mole fractions but Al was inhomogeneously distributed in the sample, which explained the broadening of the superconducting transition width ({delta}T{sub c}) with increasing Al mole fraction. For wires and tapes, significant differences were observed in the microstructure of in-situ and ex-situ samples. This holds particularly if SiC was added and yielded Mg{sub 2}Si for in-situ samples annealed at 600 -650 C and Mg-Si-O phases for ex-situ samples annealed between 900 -1050 C. Four microstructural parameters were identified as relevant for the I{sub c} of wires and tapes and these were: 1) MgB{sub 2} grain size which lies in the range of 20-1000 nm, 2) colony size (colony is a dense arrangement of MgB{sub 2} grains) which lies in the range of 1-15 {mu}m, 3) oxygen mole fraction which lies in the range of 1-16 at.% and 4) volume fraction of B-rich secondary phases which lies in the range of 0-5 %. Critical current density of the investigated samples was parameterised as a function of magnetic field and correlation was established between the microstructure parameters and the parameters of the critical current density. (orig.)

  10. Microscopic unravelling of nano-carbon doping in MgB{sub 2} superconductors fabricated by diffusion method

    Energy Technology Data Exchange (ETDEWEB)

    Wong, D.C.K. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Yeoh, W.K. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); De Silva, K.S.B. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Institute for Nanoscale Technology, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007 (Australia); Kondyurin, A.; Bao, P. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Li, W.X. [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Xu, X.; Peleckis, G.; Dou, S.X. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Ringer, S.P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); Zheng, R.K., E-mail: rongkun.zheng@sydney.edu.au [School of Physics, The University of Sydney, New South Wales 2006 (Australia)

    2015-09-25

    Highlights: • First report on nano-carbon doped MgB{sub 2} superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B{sub 4}C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB{sub 2} with 2.5% nano-carbon doped showed the highest J{sub c}, ≈10{sup 4} A/cm{sup 2} for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB{sub 2} crystalline. The strain increased across the doping level due to the carbon substitution in the MgB{sub 2} matrix. The broadening of the T{sub c} curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B{sub 4}C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB{sub 2}. Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J{sub c} of the 10% nano-carbon doped MgB{sub 2} bulk superconductor.

  11. Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO3

    International Nuclear Information System (INIS)

    Nataf, Guillaume F.; Guennou, Mael; Haussmann, Alexander; Barrett, Nick; Kreisel, Jens

    2016-01-01

    The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Carbon-coated boron using low-cost naphthalene for substantial enhancement of Jc in MgB2 superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ranot, Mahipal; Shinde, K. P.; Oh, Y. S.; Kang, S. H.; Jang, S. H.; Hwang, D. Y.; Chung, K. C. [Korea Institute of Materials Science, Changwon (Korea, Republic of)

    2017-09-15

    Carbon coating approach is used to prepare carbon-doped MgB{sub 2} bulk samples using low-cost naphthalene (C{sub 10}H{sub 8}) as a carbon source. The coating of carbon (C) on boron (B) powders was achieved by direct pyrolysis of naphthalene at 120 degrees C and then the C-coated B powders were mixed well with appropriate amount of Mg by solid state reaction method. X-ray diffraction analysis revealed that there is a noticeable shift in (100) and (110) Bragg reflections towards higher angles, while no shift was observed in (002) reflections for MgB2 doped with carbon. As compared to un-doped MgB{sub 2}, a systematic enhancement in Jc(H) properties with increasing carbon doping level was observed for naphthalene-derived C-doped MgB{sub 2} samples. The substantial enhancement in Jc is most likely due to the incorporation of C into MgB{sub 2} lattice and the reduction in crystallite size, as evidenced by the increase in the FWHM values for doped samples.

  13. Optimization of superconductivity properties in MgB2 Wires and tapes to generate high magnetic fields

    International Nuclear Information System (INIS)

    Serrano, German

    2005-01-01

    We present, in this work, a study of the effects of doping, heat treatments and mechanisms of deformation, over the microstructure and superconducting properties of powder in tube (PIT) M g B 2 wires and tapes.We observed that nano-SiC doping improves the critical current density (J c ) and the upper critical field (H c 2).The combined use of doping and Hot Isostatic Pressing (HIPing), produces samples with high density and improves J c s.We studied the influence of number and temperature of intermediate heat treatments (TTI), during the fabrication of wires and tapes.We observed that TTI made at low temperature ( o C), results in wires and tapes with better microstructure than those made at high temperature.Moreover, the increment of the heat treatments numbers at high temperature, decreases the quality of microstructure and J c .In the study of sheaths materials, we observed that the J c values measured by magnetization in Ti sheath samples are two order of magnitude larger than the values measured by transport, which indicates macroscopic fracture problems.On other hand, we fabricated tapes with excellent J c values (10 4 A/cm 2 at 4K and 7T), which are similar to those of samples made with HIPing.This tape presents some degree of grains alignment, as a consequence of rolling.We observed J c anisotropy in both transport and magnetization measurements in a range between 4 and 26K, and the same effect in H c 2.The anisotropy factor in Jc increase with applied field, while the anisotropy in Hc2 is constant with temperature (H c 2 parallel H c 2 perpendicular ∼1.2).Finally, we observed that carbon nanotubes doping improves H c 2 and this effects is most important at temperatures below 5K.This increase in H c 2 was predicted by Gurevich [45], as an effect of modification in scattering coefficient between electronics bands of M g B 2 by doping [es

  14. Anisotropy of the critical current in MgB2 tapes made of high energy milled precursor powder

    DEFF Research Database (Denmark)

    Hässler, W.; Kovac, P.; Eisterer, M.

    2010-01-01

    For applications of MgB2 wires or tapes, high critical currents in high magnetic fields are essential. By using tapes in superconducting coils the anisotropic behaviour of the critical current, i.e. the dependence on the direction of the external field in relation to the tape surface, has to be t...

  15. Detection and distribution of lithium in Mg-Li-Al based alloy by ToF-SIMS

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vinod, E-mail: vkt.meta@mnit.ac.in [Metallurgical and Materials Engineering, MNIT Jaipur, 302017 (India); Adjunct Faculty, Materials Research Centre, MNIT Jaipur, 302017 (India)

    2016-12-01

    Highlights: • First time, Time of Flight-Secondary Ion Mass Spectrometry (ToF-SIMS) is used to investigate the surface as well as bulk microstructural features of novel Mg-Li-Al based alloy. • There are six multi-oxide layers present within the surface film of LATZ9531R. • Secondary ion imaging by ToF-SIMS with mass contrast effect (including Li) is possible for a multiphase lithium-containing alloy systems. - Abstract: Time of Flight-Secondary Ion Mass Spectrometry (ToF-SIMS) is used to investigate the surface as well as bulk microstructural features of novel Mg-Li-Al based alloy namely Mg-9Li-7Al-3Sn-1Zn (LATZ9531). ToF-SIMS study indicates that there are six multi-oxide layers present within the surface film of LATZ9531. Furthermore, The presence of Li containing phase has been qualitatively confirmed based on the high number of Li-ion counts in SIMS, and the same is verified quantitatively by using electron probe microanalysis (EPMA). The novel approach may be useful to determine the chemical composition of the phases in various alloys which has lighter alloying elements such as lithium.

  16. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

    International Nuclear Information System (INIS)

    Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

    1989-01-01

    Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

  17. Production and stability of radiation-induced defects in MgAl2O4 under electronic excitation

    International Nuclear Information System (INIS)

    Yasuda, K.; Yamamoto, T.; Seki, S.; Shiiyama, K.; Matsumura, S.

    2008-01-01

    This paper investigates the formation process of radiation-induced defects in magnesium aluminate spinel and their stability using transmission electron microscopy, with emphasis on the effects of electronic excitation. Small interstitial-type dislocation loops disappeared under electron-induced electronic excitation. The elimination rate of the loops was found to be one order higher than for α-alumina. The disappearance of dislocation loops by a dissociation mechanism into isolated interstitials is discussed through analysis of the growth-and-shrink process of the loops. HARECXS analysis on cross section specimens irradiated with 350 MeV Au ions has shown the progress of cation disordering along ion tracks to be a function of electronic stopping power, (dE/dx) e . Cations were found to exchange their sites toward a random configuration. Such disordering appears from (dE/dx) e = 10 keV/nm, and increases in size with increasing (dE/dx) e to reach nearly 10 nm in diameter at 30 keV/nm, under an assumption of a fully disordered configuration

  18. Gas adsorption in Mg-porphyrin-based porous organic frameworks: A computational simulation by first-principles derived force field.

    Science.gov (United States)

    Pang, Yujia; Li, Wenliang; Zhang, Jingping

    2017-09-15

    A novel type of porous organic frameworks, based on Mg-porphyrin, with diamond-like topology, named POF-Mgs is computationally designed, and the gas uptakes of CO 2 , H 2 , N 2 , and H 2 O in POF-Mgs are investigated by Grand canonical Monte Carlo simulations based on first-principles derived force fields (FF). The FF, which describes the interactions between POF-Mgs and gases, are fitted by dispersion corrected double-hybrid density functional theory, B2PLYP-D3. The good agreement between the obtained FF and the first-principle energies data confirms the reliability of the FF. Furthermore our simulation shows the presence of a small amount of H 2 O (≤ 0.01 kPa) does not much affect the adsorption quantity of CO 2 , but the presence of higher partial pressure of H 2 O (≥ 0.1 kPa) results in the CO 2 adsorption decrease significantly. The good performance of POF-Mgs in the simulation inspires us to design novel porous materials experimentally for gas adsorption and purification. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  19. Microstructure Evolution in Mg-Zn-Zr-Gd Biodegradable Alloy: The Decisive Bridge Between Extrusion Temperature and Performance.

    Science.gov (United States)

    Yao, Huai; Wen, Jiu-Ba; Xiong, Yi; Lu, Yan; Huttula, Marko

    2018-01-01

    Being a biocompatible metal with similar mechanical properties as bones, magnesium bears both biodegradability suitable for bone substitution and chemical reactivity detrimental in bio-ambiences. To benefit its biomaterial applications, we developed Mg-2.0Zn-0.5Zr-3.0Gd (wt%) alloy through hot extrusion and tailored its biodegradability by just varying the extrusion temperatures during alloy preparations. The as-cast alloy is composed of the α-Mg matrix, a network of the fish-bone shaped and ellipsoidal (Mg, Zn) 3 Gd phase, and a lamellar long period stacking ordered phase. Surface content of dynamically recrystallized (DRXed) and large deformed grains increases within 330-350°C of the extrusion temperature, and decreases within 350-370°C. Sample second phase contains the (Mg, Zn) 3 Gd nano-rods parallel to the extrusion direction, and Mg 2 Zn 11 nanoprecipitation when temperature tuned above 350°C. Refining microstructures leads to different anticorrosive ability of the alloys as given by immersion and electrochemical corrosion tests in the simulated body fluids. The sample extruded at 350°C owns the best anticorrosive ability thanks to structural impacts where large DRXed portions and uniform nanosized grains reduce chemical potentials among composites, and passivate the extruded surfaces. Besides materials applications, the in vitro mechanism revealed here is hoped to inspire similar researches in biometal developments.

  20. Effect of Strain Restored Energy on Abnormal Grain Growth in Mg Alloy Simulated by Phase Field Methods

    Science.gov (United States)

    Wu, Yan; Huang, Yuan-yuan

    2018-03-01

    Abnormal grain growth of single phase AZ31 Mg alloy in the spatio-temporal process has been simulated by phase field models, and the influencing factors of abnormal grain growth are studied in order to find the ways to control secondary recrystallization in the microstructure. The study aims to find out the mechanisms for abnormal grain growth in real alloys. It is shown from the simulated results that the abnormal grain growth can be controlled by the strain restored energy. Secondary recrystallization after an annealing treatment can be induced if there are grains of a certain orientation in the microstructure with local high restored energy. However, if the value of the local restored energy at a certain grain orientation is not greater than 1.1E 0, there may be no abnormal grain growth in the microstructure.

  1. Contribution of mesopores in MgO-templated mesoporous carbons to capacitance in non-aqueous electrolytes

    Science.gov (United States)

    Kado, Yuya; Soneda, Yasushi; Yoshizawa, Noriko

    2015-02-01

    MgO-templated mesoporous carbons were fabricated by annealing trimagnesium dicitrate nonahydrate at various temperatures from 700 to 1000 °C with subsequent acid leaching of MgO. The obtained carbons contained a large amount of mesopores. Performances of electric double-layer capacitors using these carbons were examined for propylene carbonate electrolyte containing 1 M tetraethylammonium tetrafluoroborate. The mesoporous carbons synthesized at higher temperatures showed better rate capabilities. AC impedance measurements indicated that high-temperature annealing of the carbon precursors and the presence of mesopores were important for high rate performance. In addition, the contribution of mesopores to capacitance was more significant at higher current densities of 30 A g-1.

  2. Critical current density improvements in MgB2 superconducting bulk samples by K2CO3 additions  

    DEFF Research Database (Denmark)

    Grivel, J.-C.

    2018-01-01

    MgB2 bulk samples with potassium carbonate doping were made by means of reaction of elemental Mg and B powders mixed with various amounts of K2CO3. The Tc of the superconducting phase as well as its a-axis parameter were decreased as a result of carbon doping. Potassium escaped the samples during...... reaction. The critical current density of MgB2 was improved both in self field and under applied magnetic field for T ≤ 30 K, with optimum results for 1 mol% K2CO3 addition. The normalized flux pinning force (f(b)) shows that the flux pinning mechanism at low field is similar for all samples, following...

  3. Gamma radiation induced sensitization and photo-transfer in Mg2SiO4:Tb TLD phosphor

    International Nuclear Information System (INIS)

    Lakshmanan, A.R.; Vohra, K.G.

    1979-01-01

    Mg 2 SiO 4 :Tb TLD phosphor was found to show enhanced TL sensitivity to both gamma and UV radiations after high pre-gamma exposures (>100 R) and a post-annealing treatment at 300 0 C for 1 h. Maximum sensitization factors of 2.8 and 55 were obtained at the pre-expsoure levels of 5.2x10 1 C/kg and 1.3x10 3 C/kg for gamma and UV test radiations respectively. The near constancy of the intensity of the residual TL (RTL) peak at 500 0 C for the sensitized sample with increasing test-gamma exposures has ruled out the re-trapping model proposed earlier for the gamma radiation induced sensitization in this phosphor. The Tsub(max) for the sensitized phosphor was found to occur at a higher temperature compared to that for the virgin phosphor. The dependence of sensitization on RTL was explained qualitatively on the basis of competition between sensitization traps (having higher energy than the dosimetry traps) and RTL traps while capturing the charge carriers generated during the test-gamma exposure. The sensitization observed in this phosphor to UV test radiation was found to be a consequence of the photo-transfer of charge carriers from deep (RTL) traps to the shallow (dosimetry) traps. The reduction in RTL peak (500 0 C) intensity of the sensitized sample with increasing test-UV exposure has demonstrated the photo-transfer mechanism in this phosphor. The TL response of the virgin Mg 2 SiO 4 :Tb phosphor was found to be supralinear to both gamma and UV radiations. The TL response of the sensitized phosphor was found to be linear to gamma radiation and sublinear to UV radiation. (Auth.)

  4. NMR relaxation rates and Knight shifts in MgB2 and AlB2: theory versus experiments

    International Nuclear Information System (INIS)

    Pavarini, E; Baek, S H; Suh, B J; Borsa, F; Bud'ko, S L; Canfield, P C

    2003-01-01

    We have performed 11 B NMR measurements in 11 B enriched MgB 2 powder sample in the normal phase. The Knight shift was accurately determined by using the magic angle spinning technique. Results for 11 B and 27 Al Knight shifts (K) and relaxation rates (1/T 1 ) are also reported for AlB 2 . The data show a dramatic decrease of both K and 1/T 1 for 11 B in AlB 2 with respect to MgB 2 . We compare experimental results with ab initio calculated NMR relaxation rates and Knight shifts. The experimental values for 1/T 1 and K are in most cases in good agreement with the theoretical results. We show that the decrease of K and 1/T 1 for 11 B is consistent with a drastic drop of the density of states at the boron site in AlB 2 with respect to MgB 2

  5. Influence of severe plastic deformation on intermetallic particles in Mg-12 wt.%Zn alloy investigated using transmission electron microscopy

    International Nuclear Information System (INIS)

    Němec, M.; Gärtnerová, V.; Jäger, A.

    2016-01-01

    The in-depth microstructural characterization of intermetallic particles in an Mg-12 wt.%Zn binary alloy subjected to a severe plastic deformation is presented. The alloy was processed by four passes via equal channel angular pressing with an applied back pressure at a gradually decreasing temperature and analyzed using transmission electron microscopy techniques to observe the influence of processing on intermetallic particles. The results are compared with the initial state of the material prior to severe plastic deformation. The microstructural evolution of the α-Mg matrix and the Mg 21 Zn 25 , Mg 51 Zn 20 and MgZn 2 was analyzed using bright field imaging, selected area electron diffraction, high-resolution transmission electron microscopy and high-angle annular dark field imaging in scanning mode. The plastic deformation process influenced the α-Mg matrix and each type of intermetallic particle. The α-Mg matrix consisted of two types of areas. The first type of area had a highly deformed structure, and the second type of area had a partially recrystallized structure with an average grain size of approximately 250 nm. The Mg 21 Zn 25 microparticles exhibited distinct forms in the α-Mg matrix that were characterized as a single-crystalline form, a nano-crystalline form and a broken up form. No evidence of Mg 51 Zn 20 nanoparticles within the α-Mg matrix was found in the microstructure, which indicates their dissolution or phase transformation during the deformation process. MgZn 2 nanoparticles exhibited different behavior in both types of α-Mg matrix. Two orientation relationships toward the highly deformed α-Mg matrix were observed; however, there was no relationship toward the partially recrystallized α-Mg matrix. Additionally, the growth of the MgZn 2 nanoparticles was different in the two types of α-Mg matrix. The Mg 51 Zn 20 nanoparticles inside Mg 21 Zn 25 microparticles exhibited a distinct behavior within the single-crystalline or nano-crystalline form of the parent Mg 21 Zn 25 microparticles. The Mg 21 Zn 25 + Mg 51 Zn 20 eutectic compound was confirmed for both forms of the parent Mg 21 Zn 25 microparticles, and the growth of Mg 51 Zn 20 nanoparticles is discussed. - Highlights: •Comprehensive microstructure characterization of Mg-12 wt.%Zn alloy after ECAP-BP •TEM analysis of changes of intermetallic phases caused by SPD •Mg 21 Zn 25 particles exhibit nano-crystalline regions with grain size below 100 nm. •MgZn 2 preserved its orientation relationship toward highly deformed α-Mg after SPD. •Existence of Mg 21 Zn 25 + Mg 51 Zn 20 eutectic remained for each Mg 21 Zn 25 particle form.

  6. Microstructure evolution in Mg-Zn-Zr-Gd biodegradable alloy: the decisive bridge between extrusion temperature and performance

    Science.gov (United States)

    Yao, Huai; Wen, Jiu-Ba; Xiong, Yi; Lu, Yan; Huttula, Marko

    2018-03-01

    Being a biocompatible metal with similar mechanical properties as bones, magnesium bears both biodegradability suitable for bone substitution and chemical reactivity detrimental in bio-ambiences. To benefit its biomaterial applications, we developed Mg-2.0Zn-0.5Zr-3.0Gd (wt%) alloy through hot extrusion and tailored its biodegradability by just varying the extrusion temperatures during alloy preparations. The as-cast alloy is composed of the α-Mg matrix, a network of the fish-bone shaped and ellipsoidal (Mg, Zn)3Gd phase, and a lamellar long period stacking ordered phase. Surface content of dynamically recrystallized (DRXed) and large deformed grains increases within 330-350 C of the extrusion temperature, and decreases within 350-370 C. Sample second phase contains the (Mg, Zn)3Gd nano-rods parallel to the extrusion direction, and Mg2Zn11 nanoprecipitation when temperature tuned above 350 C. Refining microstructures leads to different anticorrosive ability of the alloys as given by immersion and electrochemical corrosion tests in the simulated body fluids. The sample extruded at 350 C owns the best anticorrosive ability thanks to structural impacts where large DRXed portions and uniform nanosized grains reduce chemical potentials among composites, and passivate the extruded surfaces. Besides materials applications, the in vitro mechanism revealed here is hoped to inspire similar researches in biometal developments.

  7. Microstructure Evolution in Mg-Zn-Zr-Gd Biodegradable Alloy: The Decisive Bridge Between Extrusion Temperature and Performance

    Directory of Open Access Journals (Sweden)

    Huai Yao

    2018-03-01

    Full Text Available Being a biocompatible metal with similar mechanical properties as bones, magnesium bears both biodegradability suitable for bone substitution and chemical reactivity detrimental in bio-ambiences. To benefit its biomaterial applications, we developed Mg-2.0Zn-0.5Zr-3.0Gd (wt% alloy through hot extrusion and tailored its biodegradability by just varying the extrusion temperatures during alloy preparations. The as-cast alloy is composed of the α-Mg matrix, a network of the fish-bone shaped and ellipsoidal (Mg, Zn3Gd phase, and a lamellar long period stacking ordered phase. Surface content of dynamically recrystallized (DRXed and large deformed grains increases within 330–350°C of the extrusion temperature, and decreases within 350–370°C. Sample second phase contains the (Mg, Zn3Gd nano-rods parallel to the extrusion direction, and Mg2Zn11 nanoprecipitation when temperature tuned above 350°C. Refining microstructures leads to different anticorrosive ability of the alloys as given by immersion and electrochemical corrosion tests in the simulated body fluids. The sample extruded at 350°C owns the best anticorrosive ability thanks to structural impacts where large DRXed portions and uniform nanosized grains reduce chemical potentials among composites, and passivate the extruded surfaces. Besides materials applications, the in vitro mechanism revealed here is hoped to inspire similar researches in biometal developments.

  8. Atomistic simulation of solid solution hardening in Mg/Al alloys: Examination of composition scaling and thermo-mechanical relationships

    International Nuclear Information System (INIS)

    Yi, Peng; Cammarata, Robert C.; Falk, Michael L.

    2016-01-01

    Dislocation mobility in a solid solution was studied using atomistic simulations of an Mg/Al system. The critical resolved shear stress (CRSS) for the dislocations on the basal plane was calculated at temperatures from 0 K to 500 K with solute concentrations from 0 to 7 at%, and with four different strain rates. Solute hardening of the CRSS is decomposed into two contributions: one scales with c 2/3 , where c is the solute concentration, and the other scales with c 1 . The former was consistent with the Labusch model for local solute obstacles, and the latter was related to the athermal plateau stress due to the long range solute effect. A thermo-mechanical model was then used to analyze the temperature and strain rate dependences of the CRSS, and it yielded self-consistent and realistic results. The scaling laws were confirmed and the thermo-mechanical model was successfully parameterized using experimental measurements of the CRSS for Mg/Al alloys under quasi-static conditions. The predicted strain rate sensitivity from the experimental measurements of the CRSS is in reasonable agreement with separate mechanical tests. The concentration scaling and the thermo-mechanical relationships provide a potential tool to analytically relate the structural and thermodynamic parameters on the microscopic level with the macroscopic mechanical properties arising from dislocation mediated deformation.

  9. Water Transport in MgSO4·7H2O during Dehydration in View of Thermal Storage

    NARCIS (Netherlands)

    Donkers, P.A.J.; Beckert, S.; Pel, L.; Stallmach, F.; Steiger, M.; Adan, O.C.G.

    2015-01-01

    The water phases in a MgSO4·7H2O crystal during heating were studied with the help of NMR. The thermogravimetric analysis (TGA) data showed that the heating rate has a strong effect on the dehydration process. NMR experiments showed that pore water, i.e., an aqueous solution of MgSO4, was produced

  10. Stress corrosion of austenitic steels mono and polycrystals in Mg Cl2 medium: micro fractography and study of behaviour improvements

    International Nuclear Information System (INIS)

    Chambreuil-Paret, A.

    1997-01-01

    The austenitic steels in a hot chlorinated medium present a rupture which is macroscopically fragile, discontinuous and formed with crystallographic facets. The interpretation of these facies crystallographic character is a key for the understanding of the stress corrosion damages. The first aim of this work is then to study into details the micro fractography of 316 L steels mono and polycrystals. Two types of rupture are observed: a very fragile rupture which stresses on the possibility of the interatomic bonds weakening by the corrosive medium Mg Cl 2 and a discontinuous rupture (at the micron scale) on the sliding planes which is in good agreement with the corrosion enhanced plasticity model. The second aim of this work is to search for controlling the stress corrosion by the mean of a pre-strain hardening. Two types of pre-strain hardening have been tested. A pre-strain hardening with a monotonic strain is negative. Indeed, the first cracks starts very early and the cracks propagation velocity is increased. This is explained by the corrosion enhanced plasticity model through the intensifying of the local corrosion-deformation interactions. On the other hand, a cyclic pre-strain hardening is particularly favourable. The first micro strains starts later and the strain on breaking point levels are increased. The delay of the starting of the first strains is explained by a surface distortion structure which is very homogeneous. At last, the dislocations structure created in fatigue at saturation is a planar structure of low energy which reduces the corrosion-deformation interactions, source of micro strains. (O.M.)

  11. Incorporation of rare-earth ions in Mg-Al layered double hydroxides: intercalation with an [Eu(EDTA)] - chelate

    Science.gov (United States)

    Li, Cang; Wang, Ge; Evans, David G.; Duan, Xue

    2004-12-01

    Reaction of an aqueous slurry of an Mg 2Al-NO 3 layered double hydroxide with a four-fold excess of Na[Eu(EDTA)] gives a material which analyses for Mg 0.68Al 0.32(OH) 2[Eu(EDTA)] 0.10(CO 3) 0.11·0.66H 2O. The interlayer spacing of the material is 13.8 Å, corresponding to a gallery height of 9.0 Å, which accords with the maximal dimensions (9-10 Å) of the anion in metal-EDTA complex salts as determined by single crystal X-ray diffraction. Geometrical considerations show that the charge density on the layered double hydroxide layers is too high to be balanced by intercalation of [Eu(EDTA)] - alone, necessitating the co-intercalation of carbonate ions which have a much higher charge density.

  12. Biphasic Response to Luteolin in MG-63 Osteoblast-Like Cells under High Glucose‑Induced Oxidative Stress

    Directory of Open Access Journals (Sweden)

    Naser Abbasi

    2016-03-01

    Full Text Available Background: Clinical evidence indicates the diabetes-induced impairment of osteogenesis caused by a decrease in osteoblast activity. Flavonoids can increase the differentiation and mineralization of osteoblasts in a high-glucose state. However, some flavonoids such as luteolin may have the potential to induce cytotoxicity in osteoblast-like cells. This study was performed to investigate whether a cytoprotective concentration range of luteolin could be separated from a cytotoxic concentration range in human MG-63 osteoblast-like cells in high-glucose condition. Methods: Cells were cultured in a normal- or high-glucose medium. Cell viability was determined with the MTT assay. The formation of intracellular reactive oxygen species (ROS was measured using probe 2’,7’ -dichlorofluorescein diacetate, and osteogenic differentiation was evaluated with an alkaline phosphatase bioassay. Results: ROS generation, reduction in alkaline phosphatase activity, and cell death induced by high glucose were inhibited by lower concentrations of luteolin (EC50, 1.29±0.23 µM. Oxidative stress mediated by high glucose was also overcome by N-acetyl-L-cysteine. At high concentrations, luteolin caused osteoblast cell death in normal- and high-glucose states (IC50, 34±2.33 and 27±2.42 µM, respectively, as represented by increased ROS and decreased alkaline phosphatase activity. Conclusion: Our results indicated that the cytoprotective action of luteolin in glucotoxic condition was manifested in much lower concentrations, by a factor of approximately 26 and 20, than was its cytotoxic activity, which occurred under normal or glucotoxic condition, respectively.

  13. Multi-band description of the specific heat and thermodynamic critical field in MgB2 superconductor

    Science.gov (United States)

    Szcześniak, R.; Jarosik, M. W.; Tarasewicz, P.; Durajski, A. P.

    2018-05-01

    The thermodynamic properties of MgB2 superconductor can be explained using the multi-band models. In the present paper we have examined the experimental data available in literature and we have found out that it is possible to reproduce the measured values of the superconducting energy gaps, the thermodynamic critical magnetic field and specific heat jump within the framework of two-band Eliashberg formalism and appropriate defined free energy difference between superconducting and normal state. Moreover, we found that the obtained results differ significantly from the predictions of the conventional Bardeen-Cooper-Schrieffer theory.

  14. Fundamental and excited states of F-type centres in MgSiO{sub 3} perovskite

    Energy Technology Data Exchange (ETDEWEB)

    Stashans, Arvids, E-mail: arvids@utpl.edu.e [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Piedra, Lorena; Briceno, Tamara [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Escuela de Geologia y Minas, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

    2010-10-15

    Quantum-chemical modelling based on the Hartree-Fock methodology and a periodic supercell model is done to study oxygen vacancy and F-type centres in the perovskite-type MgSiO{sub 3} crystal. The equilibrium geometry of defects is obtained, confirming the importance of electrostatic interaction in determination of atomic shifts. The calculated relaxation energies due to the defect formation are between 8 and 10 eV, thus evidencing favourability in the occurrence of such defects. The wave functions describing both F{sup +} and F centres are rather diffuse and the point defects are not well localised within the oxygen vacancy region. The {Delta} SCF computed absorption energies due to the F-type centres fall well within the ultraviolet spectrum, between 136 and 254 nm for the F{sup +} centre and between 163 and 248 nm for the F centre.

  15. Microscopic unravelling of nano-carbon doping in MgB2 superconductors fabricated by diffusion method

    International Nuclear Information System (INIS)

    Wong, D.C.K.; Yeoh, W.K.; De Silva, K.S.B.; Kondyurin, A.; Bao, P.; Li, W.X.; Xu, X.; Peleckis, G.; Dou, S.X.; Ringer, S.P.; Zheng, R.K.

    2015-01-01

    Highlights: • First report on nano-carbon doped MgB 2 superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B 4 C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB 2 with 2.5% nano-carbon doped showed the highest J c , ≈10 4 A/cm 2 for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB 2 crystalline. The strain increased across the doping level due to the carbon substitution in the MgB 2 matrix. The broadening of the T c curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B 4 C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB 2 . Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J c of the 10% nano-carbon doped MgB 2 bulk superconductor

  16. Investigation of structure, specific heat and superconducting transition in Mg1-xAlxB2(x∼0.5)

    International Nuclear Information System (INIS)

    Xiang, J.Y.; Zheng, D.N.; Lang, P.L.; Zhao, Z.X.; Luo, J.L.

    2004-01-01

    We have carried out structure, magnetic and specific heat measurements on aluminum doped magnetism diboride samples Mg 1-x Al x B 2 in order to investigate possible superconductivity at the x=0.5 concentration. A diamagnetic signal was observed in magnetization measurements accompanied by a decrease in resistivity. However, the diamagnetic signal was extremely small as compared to what expected from full diamagnetism. Also, the transition both in magnetization and resistance was very broad. We propose that the diamagnetism is due to a very small amount of superconducting phase such as MgB 2 and the resistive transition is due to the percolation behavior. Furthermore, we performed specific heat measurements, which are considered as a tool to investigate the bulk nature of superconducting transition, on the x=0.5 sample to verify the existence of superconductivity. We observed no evident superconducting transition in the entire temperature region from 2 to 300 K. The undistinguishable data between 0 and 5 T magnetic fields also indicated the absence of bulk superconductivity in the x=0.5 sample

  17. Influence of severe plastic deformation on intermetallic particles in Mg-12wt.%Zn alloy investigated using transmission electron microscopy

    Czech Academy of Sciences Publication Activity Database

    Němec, Martin; Gärtnerová, Viera; Jäger, Aleš

    2016-01-01

    Roč. 119, Sep (2016), 129-136 ISSN 1044-5803 R&D Projects: GA ČR GBP108/12/G043 Institutional support: RVO:68378271 Keywords : Mg-Zn * severe plastic deformation * equal channel angular pressing * transmission electron microscopy * microstructure * intermetallic particles Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.714, year: 2016

  18. Hydrogen storage in MgH2 - LaNi5 nanocomposites produced by cold rolling under inert atmosphere

    International Nuclear Information System (INIS)

    Marquez, J.J.; Silva, W.B.; Leiva, D.R.; Ishikawa, T.T.; Kiminami, C.S.; Botta, W.J.; Floriano, R.

    2016-01-01

    In this study, the effects of the addition of LaNi5 in magnesium hydride H-sorption/desorption behavior was addressed. MgH 2 - X mol.% LaNi 5 (X=0.67; 1.50 and 2.54) mixtures were processed by cold rolling (CR) inside a glove box under controlled atmosphere, with oxygen and moisture contents below 0.1 ppm. Structural characterization showed that during the H-absorption/desorption cycles, a mixture of phases consisting of MgH 2 , LaH 3 and Mg 2 NiH 4 is formed, which has an important role in the hydrogen storage kinetic properties. The mixture MgH 2 -1.50 mol.% LaNi 5 was able to absorb/desorb 4.0 wt.% H 2 in less than 15 min at 100 and 280 °C respectively. The DSC analysis showed that the LaNi 5 additive lowers the temperature at which the H-desorption starts in cold rolled MgH 2 by around 50 °C. (author)

  19. Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Nataf, Guillaume F. [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Guennou, Mael [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Haussmann, Alexander [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, George-Baehr-Str. 1, 01069, Dresden (Germany); Barrett, Nick [Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Kreisel, Jens [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422, Belvaux (Luxembourg)

    2016-03-15

    The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    International Nuclear Information System (INIS)

    Flynn, Chris; Lee, William

    2014-01-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)

  1. Interaction of vortices with different types of pinning centers in MgB{sub 2} superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Zadorosny, R; Ortiz, W A [Grupo de Supercondutividade e Magnetismo, Departamento de Fisica, Universidade Federal de Sao Carlos, 13.565-905, CP 676, Sao Carlos, SP (Brazil); Seong, W K; Kang, W N, E-mail: rafazad@df.ufscar.b [BK21 Division and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2009-03-01

    This contribution reports on the magnetic response of two MgB{sub 2} films with 600 nm of thickness. These films were grown using the hybrid physical chemical vapor deposition (HPCVD) method under different temperatures. One of the films, grown at 580 deg. C, has a micro structure with columnar grains, a rough surface and small grain size. The other, grown at 650 deg. C, has a smooth surface and larger grains. A double transition is present in the columnar sample. The lower transition temperature is due to currents tunneling through the intergrain material and the higher one is associated with the transition of the grains to the normal state. Magnetic phase diagrams in tilted geometries, with the applied fields (AC and DC) forming angles in the range (0 deg., 90 deg.) with the plane of the film, were determined to verify the influence of the perpendicular component of the AC field on pinned vortices. Hysteresis loops of magnetization versus applied field were also measured for both samples. The columnar sample exhibits jumps in the decreasing field branch of the magnetization, indicating that vortices pinned by the columnar microstructures leave the sample in bundles.

  2. Order-disorder transition of vortex matter in Mg{sub 0.9}B{sub 2}: anisotropic effects

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, A A M; Ortiz, W A [Grupo de Supercondutividade e Magnetismo, Departamento de Fisica, Universidade Federal de Sao Carlos, SP (Brazil); Sharma, P A; Hur, N; Cheong, S-W, E-mail: ana@df.ufscar.b, E-mail: ana@df.ufscar.b [Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers, NJ (United States)

    2009-03-01

    Third-harmonic susceptibility studies have been employed to probe the order-disorder transition of Vortex Matter of a magnesium-deficient sample of MgB{sub 2}. Our results reveal that the measured threshold is anisotropic for different orientations of the applied magnetic field, suggesting that the pinning efficiency of the magnesium-deficient regions depend on the orientation of the penetrated vortices.

  3. Deuterium absorption in Mg70Al30 thin films with bilayer catalysts: A comparative neutron reflectometry study

    International Nuclear Information System (INIS)

    Poirier, Eric; Harrower, Chris T.; Kalisvaart, Peter; Bird, Adam; Teichert, Anke; Wallacher, Dirk; Grimm, Nico; Steitz, Roland; Mitlin, David; Fritzsche, Helmut

    2011-01-01

    Highlights: → Mg 70 Al 30 thin films studied for hydrogen absorption using in situ neutron reflectometry. → Films with Ta/Pd, Ti/Pd and Ni/Pd bilayer catalysts systematically compared. → Measurements reveals deuterium spillover from the catalysts to the MgAl phase. → The use of Ti-Pd bilayer offers best results in terms of amount absorbed and kinetics. → Key results cross-checked with X-ray reflectometry. - Abstract: We present a neutron reflectometry study of deuterium absorption in thin films of Al-containing Mg alloys capped with a Ta/Pd, Ni/Pd and Ti/Pd-catalyst bilayer. The measurements were performed at room temperature over the 0-1 bar pressure range under quasi-equilibrium conditions. The modeling of the measurements provided a nanoscale representation of the deuterium profile in the layers at different stages of the absorption process. The absorption mechanism observed was found to involve spillover of atomic deuterium from the catalyst layer to the Mg alloy phase, followed by the deuteration of the Mg alloy. Complete deuteration of the Mg alloy occurs in a pressure range between 100 and 500 mbar, dependent on the type of bilayer catalyst. The use of a Ti/Pd bilayer catalyst yielded the best results in terms of both storage density and kinetic properties.

  4. The in vitro biocompatibility and macrophage phagocytosis of Mg17Al12 phase in Mg-Al-Zn alloys.

    Science.gov (United States)

    Liu, Chen; He, Peng; Wan, Peng; Li, Mei; Wang, Kehong; Tan, Lili; Zhang, Yu; Yang, Ke

    2015-07-01

    Mg alloys are gaining interest for applications as biodegradable medical implant, including Mg-Al-Zn series alloys with good combination of mechanical properties and reasonable corrosion resistance. However, whether the existence of second phase particles in the alloys exerts influence on the biocompatibility is still not clear. A deeper understanding of how the particles regulate specific biological responses is becoming a crucial requirement for their subsequent biomedical application. In this work, the in vitro biocompatibility of Mg17Al12 as a common second phase in biodegradable Mg-Al-Zn alloys was investigated via hemolysis, cytotoxicity, cell proliferation, and cell adhesion tests. Moreover, osteogenic differentiation was evaluated by the extracellular matrix mineralization assay. The Mg17Al12 particles were also prepared to simulate the real situation of second phase in the in vivo environment in order to estimate the cellular response in macrophages to the Mg17Al12 particles. The experimental results indicated that no hemolysis was found and an excellent cytocompatibility was also proved for the Mg17Al12 second phase when co-cultured with L929 cells, MC3T3-E1 cells and BMSCs. Macrophage phagocytosis co-culture test revealed that Mg17Al12 particles exerted no harmful effect on RAW264.7 macrophages and could be phagocytized by the RAW264.7 cells. Furthermore, the possible inflammatory reaction and metabolic way for Mg17Al12 phase were also discussed in detail. © 2014 Wiley Periodicals, Inc.

  5. Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

    International Nuclear Information System (INIS)

    Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

    2012-01-01

    To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V th increase were explained via the bonding characteristics of each element. - Highlights: ► We used non-toxic precursors not containing Si, Cl nor N elements. ► We investigated the role of H 2 gas during GeSb film deposition. ► GeSb films were deposited by chemical vapor deposition (CVD). ► Atomic ratio of Ge and Sb was well controlled by our custom made CVD system. ► Electrical switching behaviors were clearly observed in CVD-deposited GeSb film.

  6. The Oxidation States of Cooper in Sb, Cu Doped Ba.sub.0.9./sub.Sr.sub.0.1./sub. TiO.sub.3./sub. Ceramics

    Czech Academy of Sciences Publication Activity Database

    Medvecký, L.; Briančin, J.; Trpcevská, J.; Pelikan, P.; Bastl, Zdeněk

    2001-01-01

    Roč. 20, - (2001), s. 419-422 ISSN 0261-8028 Institutional research plan: CEZ:AV0Z4040901 Keywords : BaTiO3 ceramics * conductivity * trap centers Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.489, year: 2001

  7. Studies of bulk materials for thermoelectric cooling

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, J W; Nolas, G S; Volckmann, E H

    1997-07-01

    The authors discuss ongoing work in three areas of thermoelectric materials research: (1) broad band semiconductors featuring anion networks, (2) filled skutterudites, and (3) polycrystalline Bi-Sb alloys. Key results include: a preliminary evaluation of a previously untested ternary semiconductor, KSnSb; the first reported data in which Sn is used as a charge compensator in filled antimonide skutterudites; the finding that Sn doping does not effect polycrystalline Bi{sub 1{minus}x}Sb{sub x} as it does single crystal samples.

  8. Partial oxidation of 2-propanol on perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Sumathi, R.; Viswanathan, B.; Varadarajan, T.K. [Indian Inst. of Tech., Madras (India). Dept. of Chemistry

    1998-12-31

    Partial oxidation of 2-propanol was carried out on AB{sub 1-x}B`{sub x}O{sub 3} (A=Ba, B=Pb, Ce, Ti; B`=Bi, Sb and Cu) type perovskite oxides. Acetone was the major product observed on all the catalysts. All the catalysts underwent partial reduction during the reaction depending on the composition of the reactant, nature of the B site cation and the extent of substitution at B site. The catalytic activity has been correlated with the reducibility of the perovskite oxides determined from Temperature Programmed Reduction (TPR) studies. (orig.)

  9. Superior critical current density obtained in MgB_2 bulks via employing carbon-coated boron and minor Cu addition

    International Nuclear Information System (INIS)

    Peng, Junming; Liu, Yongchang; Ma, Zongqing; Shahriar Al Hossain, M.; Xin, Ying; Jin, Jianxun

    2016-01-01

    Highlights: • Usage of carbon-coated boron leads to high level of homogeneous carbon doping. • Cu addition improves MgB_2 grain connectivity, leading to higher J_c at low fields. • Cu addition reduces MgO impurity, also contributing to the improvement of J_c. - Abstract: High performance Cu doped MgB_2 bulks were prepared by an in-situ method with carbon-coated amorphous boron as precursor. It was found that the usage of carbon-coated boron in present work leads to the formation of uniformly refined MgB_2 grains, as well as a high level of homogeneous carbon doping in the MgB_2 samples, which significantly enhance the J_c in both Cu doped and undoped bulks compared to MgB_2 bulks with normal amorphous boron precursor. Moreover, minor Cu can service as activator, and thus facilitates the growth of MgB_2 grains and improves crystallinity and grain connectivity, which can bring about the excellent critical current density (J_c) at self fields and low fields (the best values are 7 × 10"5 A/cm"2 at self fields, and 1 × 10"5 A/cm"2 at 2 T, 20 K, respectively). Simultaneously, minor Cu addition can reduce the amount of MgO impurity significantly, also contributing to the improvement of J_c at low fields. Our work suggests that Cu-activated sintering combined with employment of carbon-coated amorphous boron as precursor could be a promising technique to produce practical MgB_2 bulks or wires with excellent J_c on an industrial scale.

  10. Compact Tunable Narrowband Terahertz-Wave Source Based on Difference Frequency Generation Pumped by Dual Fiber Lasers in MgO:LiNbO3

    Science.gov (United States)

    Wada, Yoshio; Satoh, Takumi; Higashi, Yasuhiro; Urata, Yoshiharu

    2017-12-01

    We demonstrate a high-average-power, single longitudinal-mode, and tunable terahertz (THz)-wave source based on difference frequency generation (DFG) in a MgO:LiNbO3 (MgO:LN) crystal. The waves for DFG are generated using a pair of Yb-doped pulsed fiber lasers with a master oscillator power fiber amplifier configuration. The average power of the THz-wave output reaches 450 μW at 1.07 THz (280 μm) at a linewidth of 7.2 GHz, and the tunability ranges from 0.35 to 1.07 THz under the pulse repetition frequency of 500 kHz. A short burn-in test of the THz wave is also carried out, and the output power stability is within ± 5% of the averaged power without any active stabilizing technique. The combination of MgO:LN-DFG and stable and robust fiber laser sources is highly promising for the development of high-average-power THz-wave sources, particularly in the high transmission sub-THz region. This approach may enable new applications of THz-wave spectroscopy in imaging and remote sensing.

  11. Magnetism of an Excited Self-Conjugate Nucleus: Precise Measurement of the g Factor of the 21+ State in Mg24

    CERN Document Server

    Kusoglu, A; Georgiev, G; Brown, B  A; Goasduff, A; Atanasova, L; Balabanski, D  L; Bostan, M; Danchev, M; Detistov, P; Gladnishki, K  A; Ljungvall, J; Matea, I; Radeck, D; Sotty, C; Stefan, I; Verney, D; Yordanov, D  T

    2015-01-01

    A precise measurement of the g factor of the first-excited state in the self-conjugate (N=Z) nucleus Mg24 is performed by a new time-differential recoil-in-vacuum method based on the hyperfine field of hydrogenlike ions. Theory predicts that the g factors of such states, in which protons and neutrons occupy the same orbits, should depart from 0.5 by a few percent due to configuration mixing and meson-exchange effects. The experimental result, g=0.538±0.013, is in excellent agreement with recent shell-model calculations and shows a departure from 0.5 by almost 3 standard deviations, thus achieving, for the first time, the precision and accuracy needed to test theory. Proof of the new method opens the way for wide applications including measurements of the magnetism of excited states of exotic nuclei produced as radioactive beams.

  12. Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, Bo

    2010-01-01

    GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second m...

  13. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

    2008-01-01

    Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

  14. The influence of fluid shear stress on the expression of Cbfa1 in MG-63 cells cultured under different gravitational conditions

    Science.gov (United States)

    Zhang, S.; Wang, B.; Cao, X. S.; Yang, Z.; Sun, X. Q.

    2008-12-01

    AuthorPurposeThis study was aimed to explore the effect of flow shear stress on the expression of Cbfa1 in human osteosarcoma cells and to survey its functional alteration in simulated microgravity. After culture for 48 h in two different gravitational environments, i.e. 1 G terrestrial gravitational condition and simulated microgravity condition, human osteosarcoma cells (MG-63) were treated with 0.5 or 1.5 Pa fluid shear stress (FSS) in a flow chamber for 15, 30, and 60 min, respectively. The total RNA in cells was isolated. RT-PCR analysis was made to examine the gene expression of Cbfa1. The total protein of cells was extracted and the expression of Cbfa1 protein was detected by means of Western blotting. ResultsMG-63 cells cultured in 1 G condition reacted to FSS treatment with an enhanced expression of Cbfa1. Compared with no-FSS control group, Cbfa1 mRNA expression increased significantly at 30 and 60 min with the treatment of FSS ( P cells cultured in simulated microgravity by using clinostat, the expression of Cbfa1 was significantly different between 1 G and simulated microgravity conditions at each test time ( P cultured in simulated microgravity, Cbfa1 mRNA expression increased significantly at 30 and 60 min with the treatment of FSS ( P osteosarcoma cells. And this inducible function of FSS was adversely affected by simulated microgravity.

  15. Effect of simulated weightlessness on the expression of Cbfα1 induced by fluid shear stress in MG-63 osteosarcoma cells.

    Science.gov (United States)

    Yang, Z.; Zhang, S.; Wang, B.; Sun, X. Q.

    Objective The role of mechanical load in the functional regulation of osteoblasts becomes an emphasis in osseous biomechanical researches recently This study was aim to explore the effect of flow shear stress on the expression of Cbf alpha 1 in human osteosarcoma cells and to survey its functional alteration in simulated weightlessness Method After cultured for 72 h in two different gravitational environments i e 1G terrestrial gravitational condition and simulated weightlessness condition human osteosarcoma cells MG-63 were treated with 0 5 Pa or 1 5 Pa fluid shear stress FSS in a flow chamber for 15 30 60 min respectively The total RNA in cells was isolated Transcription PCR analysis was made to examine the gene expression of Cbf alpha 1 And the total protein of cells was extracted and the expression of Cbf alpha 1 protein was detected by means of Western Blotting Results MG-63 cultured in 1G condition reacted to FSS treatment with an enhanced expression of Cbf alpha 1 Compared with no FSS control group Cbf alpha 1 mRNA and protein expression increased significantly at 30 and 60 min with the treatment of FSS P 0 01 And there was remarkable difference on the Cbf alpha 1 mRNA and protein expression between the treatments of 0 5 Pa and 1 5 Pa FSS at 30 min or 60 min P 0 01 As to the osteoblasts cultured in simulated weightlessness by using clinostat the expression of Cbf alpha 1 was significantly different between 1G and simulated weightlessness conditions at each test time P 0 05 Compared with no FSS

  16. Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [Kyoto Inst. of Tech. (Japan); and others

    1997-03-01

    MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)

  17. Decaying shock studies of phase transitions in MgO-SiO2 systems: implications for the Super-Earths' interiors

    Science.gov (United States)

    Bolis, R.; Morard, G.; Vinci, T.; Ravasio, A.; Bambrink, E.; Guarguaglini, M.; Koenig, M.; Musella, R.; Françoise, R.; Bouchet, J.; Ozaki, N.; Miyanishi, K.; Sekine, T.; Sakawa, Y.; Sano, T.; Kodama, R.; Guyot, F. J.; Benuzzi, A.

    2016-12-01

    Mantles of telluric exoplanets, so-called Earth-like and Super-Earths, are expected to be mainly composed of different type of oxides, such as periclase (MgO), enstatite (MgSiO3) and forsterite (Mg2SiO4). Determining the phase diagrams, melting curves and liquid properties of these compounds under extreme pressure (0.2-1 TPa) is crucial to model the internal dynamic of these exoplanets, as the melting of mantle components controls planetary temperature profiles [6]. Experimentally, these planetary thermodynamic states can be achieved with laser-shock compression. Here we present laser-driven decaying shock experiments on MgO, MgSiO3 and Mg2SiO4 samples performed at LULI and GEKKO laser facilities, where we focused 1.2-2.5 ns laser pulses with an intensity between 3-8 1013 W/cm2 exploring pressures between 0.2 and 1 TPa and temperature between 5000 and 30000 K. We determined the thermodynamic states using rear side optical diagnostics. We observed a single transition for MgO associated to melting (at 0.47 TPa ± 0.04 and 9863 ± 812 K) and no evidence of a liquid-liquid transition, dissociation or melting for all the other compounds in the range 150-500 Gpa and 200-800 Gpa respectively for MgSiO3 and Mg2SiO4. Some implications are presented comparing our data experimental and theoretical data found in literature [1, 2, 3, 4, 5]. In particular these results represent a key input to solve the controversy on a possible MgSiO3 liquid-liquid phase transition. Moreover we propose a revision of the phase diagram of MgO, with a lower melting line which results in a lower temperature profile for super-Earths. Finally our data evidence the presence of a poor electrically conducting liquid in the phase diagram of all the studied material, with implications for the modelling of magnetic field generation via dynamo mechanism.[1] McWilliams et al., Science 338 (2012): 1330-1333. [2] Spaulding et al., Physical Review Letters108 (2012): 065701. [3] Root et al., Physical Review Letters 115 (2015): 198501. [4] Miyanishi et al., Physical Review E 92 (2015): 023103. [5] Militzer, High Energy Density Physics 9 (2013): 152-157. [6] Stixrude, Philos. Trans. R. Soc. A 372 (2014): 20130076.

  18. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

    2015-01-01

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  19. Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Alfieri, G.; Sundaramoorthy, V. K.; Micheletto, R.

    2018-05-01

    Magnesium (Mg) is the p-type doping of choice for GaN, and selective area doping by ion implantation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, not much is known about defects generated by ion implantation. This is especially true for the case of Mg. In this study, we carried out an electrical characterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2-1.2 eV energy range, below the conduction band. The isochronal annealing behavior of these levels showed that most of them are thermally stable up to 1000 °C. The nature of the detected defects is then discussed in the light of the results found in the literature.

  20. Phase boundary between cubic B1 and rhombohedral structures in (Mg,Fe)O magnesiowüstite determined by in situ X-ray diffraction measurements

    Science.gov (United States)

    Dymshits, Anna M.; Litasov, Konstantin D.; Shatskiy, Anton; Chanyshev, Artem D.; Podborodnikov, Ivan V.; Higo, Yuji

    2018-01-01

    The phase relations and equation of state of (Mg0.08Fe0.92)O magnesiowüstite (Mw92) have been studied using the Kawai-type high-pressure apparatus coupled with synchrotron radiation. To determine the phase boundary between the NaCl-type cubic (B1) and rhombohedral ( rB1) structures in Mw92, in situ X-ray observations were carried out at pressures of 0-35 GPa and temperatures of 300-1473 K. Au and MgO were used as the internal pressure markers and metallic Fe as oxygen fugacity buffer. The phase boundary between B1 and rB1 structures was described by a linear equation P (GPa) = 1.6 + 0.033 × T (K). The Clapeyron slope (d P/d T) determined in this study is close to that obtained at pressures above 70 GPa but steeper than that obtained for FeO. An addition of MgO to FeO structure expands the stability field of the rB1 phase to lower pressures and higher temperatures. Thus, the rB1 phase may be stabilized with respect to the B1 phase at a lower pressures. The pressure-volume-temperature equation of state of B1-Mw92 was determined up to 30 GPa and 1473 K. Fitting the hydrostatic compression data up to 30 GPa with the Birch-Murnaghan equation of state (EoS) yielded: unit cell volume ( V 0, T0), 79.23 ± 4 Å3; bulk modulus ( K 0, T0), 183 ± 4 GPa; its pressure derivative ( K' T ), 4.1 ± 0.4; (∂ K 0, T /∂ T) = -0.029 ± 0.005 GPa K‒1; a = 3.70 ± 0.27 × 10-5 K-1 and b = 0.47 ± 0.49 × 10-8 K-2, where α0, T = a + bT is the volumetric thermal expansion coefficient. The obtained bulk modulus of Mw92 is very close to the value expected for stoichiometric iron-rich (Mg,Fe)O. This result confirms the idea that the bulk modulus of (Mg,Fe)O is greatly affected by the actual defect structure, caused by either Mg2+ or vacancies.