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Sample records for berkelium arsenides

  1. New berkelium isotope: 242Bk

    International Nuclear Information System (INIS)

    A new isotope of berkelium, 242Bk, was produced with a cross section of approx. 10 μb in reactions of boron on uranium and nitrogen on thorium. It decays by electron capture with a half-life of 7 +- 1.3 minutes. The branching ratio for this isotope for alpha decay is less than 1% and that for spontaneous fission is less than 0.03%. 2 figures, 2 tables

  2. Gallium Arsenide

    Science.gov (United States)

    Brozel, Mike

    The history of gallium arsenide is complicated because the technology required to produce GaAs devices has been fraught with problems associated with the material itself and with difficulties in its fabrication. Thus, for many years, GaAs was labelled as "the semiconductor of the future, and it will always be that way." Recently, however, advances in compact-disc (CD) technology, fibre-optic communications and mobile telephony have boosted investment in GaAs research and development. Consequently, there have been advances in materials and fabrication technology and, as a result, GaAs devices now enjoy stable niche markets.

  3. Characterization of berkelium(III) dipicolinate and borate compounds in solution and the solid state.

    Science.gov (United States)

    Silver, Mark A; Cary, Samantha K; Johnson, Jason A; Baumbach, Ryan E; Arico, Alexandra A; Luckey, Morgan; Urban, Matthew; Wang, Jamie C; Polinski, Matthew J; Chemey, Alexander; Liu, Guokui; Chen, Kuan-Wen; Van Cleve, Shelley M; Marsh, Matthew L; Eaton, Teresa M; van de Burgt, Lambertus J; Gray, Ashley L; Hobart, David E; Hanson, Kenneth; Maron, Laurent; Gendron, Frédéric; Autschbach, Jochen; Speldrich, Manfred; Kögerler, Paul; Yang, Ping; Braley, Jenifer; Albrecht-Schmitt, Thomas E

    2016-08-26

    Berkelium is positioned at a crucial location in the actinide series between the inherently stable half-filled 5f(7) configuration of curium and the abrupt transition in chemical behavior created by the onset of a metastable divalent state that starts at californium. However, the mere 320-day half-life of berkelium's only available isotope, (249)Bk, has hindered in-depth studies of the element's coordination chemistry. Herein, we report the synthesis and detailed solid-state and solution-phase characterization of a berkelium coordination complex, Bk(III)tris(dipicolinate), as well as a chemically distinct Bk(III) borate material for comparison. We demonstrate that berkelium's complexation is analogous to that of californium. However, from a range of spectroscopic techniques and quantum mechanical calculations, it is clear that spin-orbit coupling contributes significantly to berkelium's multiconfigurational ground state. PMID:27563098

  4. Extraction of tetravalent berkelium and cerium by aliquate-336-S-NO3 quaternary ammonium salt

    International Nuclear Information System (INIS)

    Extraction of tetravalent berkelium and cerium by aliquate-336-S-NO3 quaternary ammonium salt from nitric acid solutions is investigated. The effect of concentrations of nitric acid and extracting agent, nature of an oxidant (potassium bromate, potassium bichromate, mixture of AgNO3 and (NH4)2S2O8) and solvent on the distribution coefficient of berkelium(4) and cerium(4) is studied. It is established that solutions of aliquate-336-S-NO3 in carbon tetrachloride and dichloroethane extract quantitatively tetravalent berkelium from 10-12 M nitric acid solutions and cerium - from 1-10 M nitric acid solutions containing potassium bichromate as an oxidant. It is shown that the value of distribution coefficient for berkelium and cerium depends on the nature of an oxidant and extracting agent concentration. It is established that in the case of extraction by quaternary ammonium salt with one berkelium(4) mole four aliquate-336-SNO3 moles are associated and 1.5-1.6 mole of extracting agent are associated with one cerium(4) mole. It permits to make a conclusion that stoichiometry of extraction reactions by quaternary ammonium salt is not the same for tetravalent berkelium and cerium. It is shown that trivalent transplutonium and rare earth elements are not practically extracted by aliquate-336-S-NO3 from nitric acid solutions

  5. Indentation fracture of gallium arsenide

    OpenAIRE

    Pouvreau, Cédric; GIOVANOLA, Jacques; Breguet, Jean-Marc

    2008-01-01

    The scribe and break technique (or dicing) is a widely employed method in the industry of semiconductors to separate infrared laser diodes made from gallium arsenide (GaAs). The scribing step allows to create a precursor crack which is then propagated during the breaking step, along preferential {110} cleavage planes of GaAs. The main drawback of the scribing process is that it generates a lot of undesirable cracks and particles that degrade the performances of devices. In this dissertation, ...

  6. Window structure for passivating solar cells based on gallium arsenide

    Science.gov (United States)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  7. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  8. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    Science.gov (United States)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  9. A terminal molybdenum arsenide complex synthesized from yellow arsenic.

    Science.gov (United States)

    Curley, John J; Piro, Nicholas A; Cummins, Christopher C

    2009-10-19

    A terminal molybdenum arsenide complex is synthesized in one step from the reactive As(4) molecule. The properties of this complex with its arsenic atom ligand are discussed in relation to the analogous nitride and phosphide complexes. PMID:19764796

  10. Gallium arsenide p-type low temperature thermometers

    International Nuclear Information System (INIS)

    The use of p-type gallium arsenide for resistance thermometry is discussed. This semiconductor can be used for creating a family of thermometers with sufficiently small magnetoresistance and high sensitivity for the 0.3 - 350 K range. Performance characteristics of gallium arsenide doped with zinc, cadmium and manganese in the 1016 - 1018 cm-3 range of concentration and magnetoresistance in fields of up to 5T are examined. (author)

  11. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  12. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  13. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  14. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    Science.gov (United States)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  15. Gallium interstitial contributions to diffusion in gallium arsenide

    OpenAIRE

    Schick, J. T.; Morgan, C. G.; Papoulias, P

    2011-01-01

    Enthalpies of formation of gallium interstitials and all the other native point defects in gallium arsenide are calculated using the same well-converged \\emph{ab initio} techniques. Using these results, equilibrium concentrations of these defects are computed as a function of chemical potential from the arsenic rich limit to the gallium rich limit and as a function of the doping level from $p$-type to $n$-type. Gallium interstitial diffusion paths and migration barriers for diffusion are dete...

  16. Plasma chemical etching of gallium arsenide in chlorine

    International Nuclear Information System (INIS)

    One of the most promising methods, used for the examination of the kinetics and determination of the moments of the start and completion of the processes of plasma chemical etching of a wide range of inorganic materials is optical emission spectroscopy. Therefore, the aim of this work was to examine the kinetic relationships of etching of gallium arsenide in chlorine plasma and determine the possibilities of the optical emission spectroscopy for examination and control of the process

  17. Testing of gallium arsenide solar cells on the CRRES vehicle

    International Nuclear Information System (INIS)

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

  18. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  19. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang

    2009-09-21

    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  20. Point defects and electric compensation in gallium arsenide single crystals

    International Nuclear Information System (INIS)

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated

  1. Methods for forming group III-arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  2. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  3. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    OpenAIRE

    Guha, Biswarup; Marsault, Felix; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan

    2016-01-01

    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control o...

  4. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; Agee, C. B.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approx.576-867 C. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Metallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120deg triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3+, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  5. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  6. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    CERN Document Server

    Guha, Biswarup; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan

    2016-01-01

    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening n...

  7. Progress to a Gallium-Arsenide Deep-Center Laser

    Directory of Open Access Journals (Sweden)

    Janet L. Pan

    2009-10-01

    Full Text Available Although photoluminescence from gallium-arsenide (GaAs deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, hotoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers, which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  8. Greyscale proton beam writing in p-type Gallium Arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Diering, D., E-mail: david.diering@gmx.de [Universität Leipzig, Institute for Experimental Physics II, Division of Nuclear Solid State Physics, Linnéstr. 5, 04103 Leipzig (Germany); Spemann, D., E-mail: spemann@uni-leipzig.de [Universität Leipzig, Institute for Experimental Physics II, Division of Nuclear Solid State Physics, Linnéstr. 5, 04103 Leipzig (Germany); Lenzner, J.; Müller, St.; Böntgen, T.; Wenckstern, H. von [Universität Leipzig, Institute for Experimental Physics II, Semiconductor Physics Group, Linnéstr. 5, 04103 Leipzig (Germany)

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×10{sup 14} H{sup +} cm{sup −2} to 1.0×10{sup 18} H{sup +} cm{sup −2} at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×10{sup 15} H{sup +} cm{sup −2} and 1.2×10{sup 17} H{sup +} cm{sup −2}, respectively. We observed an increasing etching rate for fluences larger than 10{sup 16} H{sup +} cm{sup −2}.

  9. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    Science.gov (United States)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  10. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  11. Spontaneous atomic ordering in MOVPE grown gallium arsenide antimonide

    Science.gov (United States)

    Jiang, Weiyang

    process. It is unlikely that the ordering mechanism is similar to the dimer-induced strain models that have been successfully used to explain CuPt ordering in InGaP. We propose a simple model based on alternating incorporation of group V adatoms at step edges. Keywords. GaAsSb; MOVPE; Bi surfactant; TEM; CuAu ordering. Subject. Gallium Arsenide Antimonide; Metalorganic Vapor-phase Epitaxy; Bismuth Surfactant; Transmission Electron Microscopy; CuAu Ordering.

  12. Gallium arsenide integrated optical devices for high-speed diagnostic systems

    International Nuclear Information System (INIS)

    The design, fabrication, and evaluation of waveguide electro-optic modulators in gallium arsenide for application to high-speed diagnostic systems are discussed specifically. This paper is focused on high bandwidth, single event analog modulation, and radiation susceptibility of these devices

  13. Light transport through disordered layers of dense gallium arsenide submicron particles

    NARCIS (Netherlands)

    Van der Beek, T.; Barthelemy, P.J.C.; Johnson, P.M.; Wiersma, D.S.; Lagendijk, A.

    2012-01-01

    We present a study of optical transport properties of powder layers with submicrometer, strongly scattering gallium arsenide (GaAs) particles. Uniform, thin samples with well controlled thicknesses were created through the use of varying grinding times, sedimentation fractionation, annealing, and a

  14. Biological availability of nickel arsenides: toxic effects of particulate Ni/sub 5/As/sub 2/

    Energy Technology Data Exchange (ETDEWEB)

    Gurley, L.R.; Tobey, R.A.; Valdez, J.G.; Halleck, M.S.; Barham, S.S.

    1981-01-01

    Considerations of (1) oil shale retort operating conditions, (2) oil shale elemental composition, (3) nickel and arsenic physico-chemical properties, and (4) oil shale matrix structure lead to the suggestion that nickel arsenides may be formed during the oil shale retorting process. The biological effects of nickel arsenides have not been previously studied. However, similarities between nickel subarsenide and nickel subsulfide and nickel subselenimide, both of which are known potent carcinogens, have caused concern that nickel arsenides may have adverse effects on biological systems. To determine if fugitive nickel arsenides from an oil shale retort could pose a threat to personnel in the workplace or to other living organisms in the environment, a program to study the toxicity of nickel arsenides has been initiated. Five stable nickel arsenides (Ni/sub 5/As/sub 2/, Ni/sub 2/As, Ni/sub 11/As/sub 8/, NiAs, and NiAs/sub 2/) and nickel arsenic sulfide (NiAsS) are considered possible species for study.

  15. First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?

    Science.gov (United States)

    Lindsay, L.; Broido, D. A.; Reinecke, T. L.

    2013-07-01

    We have calculated the thermal conductivities (κ) of cubic III-V boron compounds using a predictive first principles approach. Boron arsenide is found to have a remarkable room temperature κ over 2000Wm-1K-1; this is comparable to those in diamond and graphite, which are the highest bulk values known. We trace this behavior in boron arsenide to an interplay of certain basic vibrational properties that lie outside of the conventional guidelines in searching for high κ materials, and to relatively weak phonon-isotope scattering. We also find that cubic boron nitride and boron antimonide will have high κ with isotopic purification. This work provides new insight into the nature of thermal transport at a quantitative level and predicts a new ultrahigh κ material of potential interest for passive cooling applications.

  16. Suppression of decoherence in gallium arsenide multiple quantum wells by means of bang-bang control

    Energy Technology Data Exchange (ETDEWEB)

    Takasago, K. [Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)], E-mail: takasago.k.aa@m.titech.ac.jp; Ogawa, Y.; Minami, F. [Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)

    2008-05-15

    We performed a three-pulse six-wave mixing (SWM) measurement on a gallium arsenide (GaAs) multiple quantum well and observed the time-resolved SWM signal using the heterodyne detection technique. The second pulse acts as a {pi} pulse that reverses the time evolution of the non-Markovian dynamics. By changing the pulse interval conditions, we confirmed the suppression of exciton decoherence by {pi} pulse irradiation (bang-bang control)

  17. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    H sensing, we apply the same to a more complex system - proteins. The sensing protocol involves the functionalization of the sensor surface with a receptor protein followed by the addition of the protein of interest. Sensor response to oppositely charged proteins is used to confirm the sensitivity of the......With the goal of real time electrical detection of chemical and biological species, nanowires have shown great promise with high sensitivity due to their large surface to volume ratio. While the focus of such electrical detection has shifted to one dimensional semiconductor nanostuctures, Silicon...... remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss the...

  18. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review

    International Nuclear Information System (INIS)

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding aresenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolities, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the aresnic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  19. Indium arsenide nanowire field-effect transistors for pH and biological sensing

    International Nuclear Information System (INIS)

    Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

  20. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  1. An examination of the reactive sputtering of silicon nitride on to gallium arsenide

    International Nuclear Information System (INIS)

    The deposition of silicon nitride thin films by the reactive sputtering of elemental silicon in a nitrogen/argon plasma has been investigated. The composition of the films has been examined using infra-red reflectance, X-ray photoelectron and Auger electron spectroscopies and spark source mass spectrometry. Oxygen has been found to be a major contaminant in these sputter deposited films, the oxygen concentration depending on the ambient gas pressure. The use of the silicon oxy-nitride films as annealing encapsulants for the activation of silicon ion implanted semi-insulating gallium arsenide has also been investigated. (author)

  2. Ab initio study of the unusual thermal transport properties of boron arsenide and related materials

    Science.gov (United States)

    Broido, D. A.; Lindsay, L.; Reinecke, T. L.

    2013-12-01

    Recently, using a first principles approach, we predicted that zinc blende boron arsenide (BAs) will have an ultrahigh lattice thermal conductivity, κ, of over 2000 Wm-1K-1 at room temperature (RT), comparable to that of diamond. Here, we provide a detailed ab initio examination of phonon thermal transport in boron arsenide, contrasting its unconventional behavior with that of other related materials, including the zinc blende crystals boron nitride (BN), boron phosphide, boron antimonide, and gallium nitride (GaN). The unusual vibrational properties of BAs contribute to its weak phonon-phonon scattering and phonon-isotope scattering, which are responsible for its exceptionally high κ. The thermal conductivity of BAs has contributions from phonons with anomalously large mean free paths (˜2 μm), two to three times those of diamond and BN. This makes κ in BAs sensitive to phonon scattering from crystal boundaries. An order of magnitude smaller RT thermal conductivity in a similar material, zinc blende GaN, is connected to more separated acoustic phonon branches, larger anharmonic force constants, and a large isotope mixture on the heavy rather than the light constituent atom. The striking difference in κ for BAs and GaN demonstrates the importance of using a microscopic first principles thermal transport approach for calculating κ. BAs also has an advantageous RT coefficient of thermal expansion, which, combined with the high κ value, suggests that it is a promising material for use in thermal management applications.

  3. THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    1996-02-01

    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  4. Optimal power settings of aluminum gallium arsenide lasers in caries inhibition — An in vitro study

    Science.gov (United States)

    Sharma, Sonali; Hegde, Mithra N; Sadananda, Vandana; Mathews, Blessen

    2016-01-01

    Context: Incipient carious lesions are characterized by subsurface dissolution due to more fluoride ions in the 50-100 microns of the tooth's outer surface. Aims: To determine an optimal power setting for 810 nm aluminum gallium arsenide laser for caries inhibition. Materials and Methods: Fifty-four caries-free extracted teeth were sectioned mesiodistally. The samples were divided into 18 groups for each power setting being evaluated. Each group had six samples. The laser used is 810 nm aluminum gallium arsenide laser with power setting from 0.1 watts to 5 watts. Laser fluorescence based device was used to evaluate the effect of irradiation. Statistical Analysis Used: Paired “t” test, one-way analysis of variance (ANOVA), Tukey's post hoc test, and the Pearson's correlation test. Results: The paired t-test showed that there is minimum divergence from the control for 3.5 watts. Tukey's post hoc test also showed statistically significantly results for 3.5 watts. The Pearson's correlation test showed that there was negative correlation between the watts and irradiation. Conclusions: The power setting that gave statistically significant results was 3.5 watts. PMID:27099427

  5. NMR studies on the new iron arsenide superconductors including the superconducting state

    International Nuclear Information System (INIS)

    We summarize our Nuclear Magnetic Resonance (NMR) and Nuclear Quadrupole Resonance (NQR) results on the new iron arsenide superconductor LaO1-xFxFeAs in the normal state, and show new NMR data in the superconducting state. Beyond early evidence of nodes and spin-singlet pairing[2], we find evidence of a deviation of the T3 behaviour of the spin lattice relaxation rate, 1/T1, at temperatures significantly below Tc, which would agree with the suggested extended s-wave symmetry. The deviation of the T3 behaviour is induced by the pair breaking effect of impurities. Different amounts of impurities would lead to different temperature dependences of 1/T1, which would allow to differentiate between d-wave and extended s-wave symmetries.

  6. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rosner, Helge; Schnelle, Walter; Nicklas, Michael; Leithe-Jasper, Andreas [MPI CPfS Dresden (Germany); Weikert, Franziska [Los Alamos National Laboratory, New Mexico (United States); HLD Dresden Rossendorf (Germany); Wosnitza, Joachim [HLD Dresden Rossendorf (Germany)

    2013-07-01

    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A{sub 1-x}K{sub x}Fe{sub 2-y}T{sub y}As{sub 2} (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  7. Gallium arsenide quantum well-based far infrared array radiometric imager

    Science.gov (United States)

    Forrest, Kathrine A.; Jhabvala, Murzy D.

    1991-01-01

    We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

  8. Methods for forming group III-V arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  9. Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

    CERN Document Server

    Lu, Wei; Liu, Xuefeng; Lu, Hong; Li, Caizhen; Lai, Jiawei; Zhao, Chuan; Tian, Ye; Liao, Zhimin; Jia, Shuang; Sun, Dong

    2016-01-01

    Three dimensional (3D) Dirac semimetal exhibiting ultrahigh mobility has recently attracted enormous research interests as 3D analogues of graphene. From the prospects of future application toward electronic/optoelectronic devices with extreme performance, it is crucial to understand the relaxation dynamics of photo-excited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of photo-excited carrier dynamics in cadmium arsenide (Cd3As2), which is among the most stable Dirac semimetals that have been confirmed experimentally. With low energy probe photon of 0.3 eV, photo-excited Dirac Fermions dynamics closing to Dirac point are probed. Through transient reflection measurements on bulk and nanoplate samples that have different doping intensities, and systematic probe wavelength, pump power and lattice temperature dependent measurements, the dynamical evolution of carrier distributions can be retrieved qualitatively using a two-temperature model. The pho...

  10. Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor.

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, Suchitra [Cambridge University; Gillett, J [Cambridge University; Harrison, N [Los Alamos National Laboratory (LANL); Lau, P H C [Cambridge University; Singh, David J [ORNL; Mielke, C H [Los Alamos National Laboratory (LANL); Lonzarich, G G [Cambridge University

    2008-01-01

    We report measurements of quantum oscillations in SrFe{sub 2}As{sub 2}--which is an antiferromagnetic parent of the iron arsenide family of superconductors--known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T{sub c} superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state.

  11. Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, Suchitra E; Gillett, J; Lau, P H C; Lonzarich, G G [Cavendish Laboratory, Cambridge University, J J Thomson Avenue, Cambridge CB3 OHE (United Kingdom); Harrison, N; Mielke, C H [NHMFL, Los Alamos National Laboratory, MS E536, Los Alamos, NM 87545 (United States); Singh, D J [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)], E-mail: suchitra@phy.cam.ac.uk

    2008-10-22

    We report measurements of quantum oscillations in SrFe{sub 2}As{sub 2}-which is an antiferromagnetic parent of the iron arsenide family of superconductors-known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T{sub c} superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state. (fast track communication)

  12. Development of a dome Fresnel lens/gallium arsenide photovoltaic concentrator for space applications

    Science.gov (United States)

    O'Neill, Mark J.; Piszczor, Michael F.

    1987-01-01

    A novel photovoltaic concentrator system is currently being developed. Phase I of the program, completed in late 1986, produced a conceptual design for the concentrator system, including an array weight and performance estimates based on optical, electrical, and thermal analyses. Phase II of the program, just underway, concerns the fabrication and testing of prototype concentrator panels of the design. The concentrator system uses dome Fresnel lenses for optical concentration; gallium arsenide concentrator cells for power generation; prismatic cell covers to eliminate gridline obscuration losses; a backplane radiator for heat rejection; and a honeycomb structure for the deployable panel assembly. The conceptual design of the system, its anticipated performance, and its estimated weight are reported.

  13. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    International Nuclear Information System (INIS)

    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A1-xKxFe2-yTyAs2 (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  14. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  15. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, R.; Ahamad, R. [Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Ibrahim, Z.; Othaman, Z. [Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  16. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard

    2011-08-15

    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  17. Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

    International Nuclear Information System (INIS)

    The thermal conductivity of icosahedral boron arsenide (B12As2) films grown on (0001) 6H-SiC substrates by chemical vapor deposition was studied by the 3ω technique. The room temperature thermal conductivity decreased from 27.0 to 15.3 W/m K as the growth temperature was decreased from 1450 to 1275 deg. C. This is mainly attributed to the differences in the impurity concentration and microstructure, determined from secondary ion mass spectrometry and high resolution transmission electron microscopy, respectively. Callaway's theory was applied to calculate the temperature-dependent thermal conductivity, and the results are in good agreement with the experimental data. Seebeck coefficients were determined as 107 μV/K and 136 μV/K for samples grown at 1350 deg. C with AsH3/B2H6 flow ratio equals to 1:1 and 3:5, respectively.

  18. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  19. About some methods of obtaining of cheap gallium arsenide photo converters and solar batteries on their base

    International Nuclear Information System (INIS)

    The article presents the talk on some methods of obtaining cheap gallium arsenide photo-converters and solar batteries on their basis given at the International Workshop on applied solar energy held in Tashkent (Uzbekistan) in June 1997. The technology elaborated permits to obtain solar cells with efficiency of photo-conversion up to 20%. The electrical and photoelectrical properties of obtained cells were investigated. The elaborated solar cells are used in portable devices working in field conditions. (A.A.D.)

  20. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  1. Carbon doping of gallium arsenide and reflectance difference spectroscopy of compound semiconductors grown by metalorganic vapor-phase epitaxy

    Science.gov (United States)

    Begarney, Michael John

    The surface structure and chemistry of compound semiconductors used in heterojunction bipolar transistors was investigated. Lattice-matched, single crystal films of gallium arsenide and indium phosphide were deposited by metalorganic vapor-phase epitaxy in a horizontal-flow, quartz reactor. Two areas of the transistor fabrication process were studied: (1) carbon doping of the gallium arsenide base layer using carbon tetrachloride, and (2) in-situ monitoring of the surface reconstructions of gallium arsenide and indium phosphide by reflectance difference spectroscopy for improved heterointerface formation. Carbon tetrachloride was found to effect the growth of gallium arsenide in two ways: (1) reaction of chlorine with adsorbed gallium atoms to produce volatile GaCl, and (2) reaction of chlorine with the GaAs film to produce GaCl3. The latter of these reactions was found to be insignificant below a temperature-dependent threshold ratio of chlorine to gallium. At lower values of this ratio, step bunching and pinning was observed, while at higher values, pits ranging from 20 to 50 nm in diameter resulted. We show that these results arise due to the presence of the c(4 x 4) gallium arsenide reconstruction during crystal growth, and the site-specific adsorption of CCl4 at gallium atom sites, which are present only at step edges for this reconstruction. The relationship between the reflectance difference spectra and the atomic structure of arsenic-rich reconstructions of GaAs (001) were investigated. It was found that a roughening process, involving the desorption of arsenic and outdiffusion of gallium atoms to the surface, takes place as the surface structure changes with decreasing arsenic coverage. We determined that the intensity of the negative peak at 2.8 eV strongly depends on the presence of adsorbed alkyl groups and gallium atoms, while, by contrast, the intensity of the positive peak at 2.9 eV is directly proportional to the density of (2 x 4)-type dimers. We

  2. Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

    Science.gov (United States)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.; Brown, M.

    1988-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  3. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  4. Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy

    Science.gov (United States)

    Walia, Jaspreet; Boulanger, Jonathan; Dhindsa, Navneet; LaPierre, Ray; (Shirley Tang, Xiaowu; Saini, Simarjeet S.

    2016-06-01

    Gallium arsenide nanowires have shown considerable promise for use in applications in which the absorption of light is required. When the nanowires are oriented vertically, a considerable amount of light can be absorbed, leading to significant heating effects. Thus, it is important to understand the threshold power densities that vertical GaAs nanowires can support, and how the nanowire morphology is altered under these conditions. Here, resonant photo-thermal modification of vertical GaAs nanowires was studied using both Raman spectroscopy and electron microscopy techniques. Resonant waveguiding, and subsequent absorption of the excited optical mode reduces the irradiance vertical GaAs nanowires can support relative to horizontal ones, by three orders of magnitude before the onset of structural changes occur. A power density of only 20 W mm‑2 was sufficient to induce local heating in the nanowires, resulting in the formation of arsenic species. Upon further increasing the power, a hollow nanowire morphology was realized. These findings are pertinent to all optical applications and spectroscopic measurements involving vertically oriented GaAs nanowires. Understanding the optical absorption limitations, and the effects of exceeding these limitations will help improve the development of all III–V nanowire devices.

  5. Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches

    Institute of Scientific and Technical Information of China (English)

    施卫; 陈二柱; 张显斌; 李琦

    2002-01-01

    Considering that semi-insulating gallium arsenide photoconductive switches can be triggered into the high gain mode and no reliable theories can account for the observed transient characteristics, we propose the monopole charge domain model to explain the peculiar switching phenomena occurring in the high gain mode and we discuss the requirements for the lock-on switching. During operation on this mode, the applied field across the switch and the lock-on field are all larger than the Gunn threshold field. Our developed monopole charge domain is based on the transferred-electron effect, but the domain is only composed of large numbers of electrons piled up due to the negative differential mobility. Using the model and taking the physical mechanism of the avalanche impact ionization and recombination radiation into consideration, we interpret the typical phenomena of the lock-on effect, such as the time delay between the beginning of optical illumination and turning-on of the switch, and the conduction mechanism of the sustaining phase. Under different conditions of bias field intensity and incident light energy, the time delay of the switching is calculated. The results show that the physical mechanisms of impact ionization and recombination radiation occurring in the monopole charge domain are responsible for the lock-on switching.

  6. Discovery of a Weyl fermion state with Fermi arcs in niobium arsenide

    Science.gov (United States)

    Xu, Su-Yang; Alidoust, Nasser; Belopolski, Ilya; Yuan, Zhujun; Bian, Guang; Chang, Tay-Rong; Zheng, Hao; Strocov, Vladimir N.; Sanchez, Daniel S.; Chang, Guoqing; Zhang, Chenglong; Mou, Daixiang; Wu, Yun; Huang, Lunan; Lee, Chi-Cheng; Huang, Shin-Ming; Wang, Baokai; Bansil, Arun; Jeng, Horng-Tay; Neupert, Titus; Kaminski, Adam; Lin, Hsin; Jia, Shuang; Zahid Hasan, M.

    2015-09-01

    Three types of fermions play a fundamental role in our understanding of nature: Dirac, Majorana and Weyl. Whereas Dirac fermions have been known for decades, the latter two have not been observed as any fundamental particle in high-energy physics, and have emerged as a much-sought-out treasure in condensed matter physics. A Weyl semimetal is a novel crystal whose low-energy electronic excitations behave as Weyl fermions. It has received worldwide interest and is believed to open the next era of condensed matter physics after graphene and three-dimensional topological insulators. However, experimental research has been held back because Weyl semimetals are extremely rare in nature. Here, we present the experimental discovery of the Weyl semimetal state in an inversion-symmetry-breaking single-crystalline solid, niobium arsenide (NbAs). Utilizing the combination of soft X-ray and ultraviolet photoemission spectroscopy, we systematically study both the surface and bulk electronic structure of NbAs. We experimentally observe both the Weyl cones in the bulk and the Fermi arcs on the surface of this system. Our ARPES data, in agreement with our theoretical band structure calculations, identify the Weyl semimetal state in NbAs, which provides a real platform to test the potential of Weyltronics.

  7. A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

    Science.gov (United States)

    Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K.

    1992-07-01

    We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

  8. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs)

    Science.gov (United States)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  9. On the understanding of irradiation effects in germanium, silicon and gallium arsenide semi-conductors

    International Nuclear Information System (INIS)

    We have studied the behaviour of germanium, silicon and gallium arsenide semiconductors irradiated by different projectiles (heavy ions, protons, electrons and fullerenes). At low doses, thanks to deep level transient spectroscopy (DLTS) and Hall effect electrical measurements, we were able to explicit the nature of the defects present in germanium after irradiation at room temperature. For different projectiles, we have determined the defect creation kinetics. At higher doses, the electrical measurements have brought to the fore the presence of a specific defect created only after an heavy ion (or proton) irradiation. Moreover, positron annihilation spectroscopy (PAS) measurements show that size of this specific defect increases with the fluence. The damage has also been quantified by channeling Rutherford backscaterring (RBS-C) measurements. At first sight, the obtained defect creation rates are normalized by the nuclear collisions. This normalization is also present in the inverse of the gain evolution in silicon bipolar transistors. Meanwhile, an extensive study shows an efficiency decrease of the defect creation at intermediate values of the electronic energy loss Se, then, at the opposite, an increasing at higher values of Se. In the three semiconductors, we have observed track formation after fullerenes irradiation. These tracks are amorphous cylinders which have been characterized by transmission and high resolution electronic microscopy. They are due to the very high values of the electronic energy density which can be deposited by fullerenes owing to their low velocity. (author)

  10. Magnetism of unconventional superconductors using the example of ruthenate and iron arsenide compounds

    International Nuclear Information System (INIS)

    The focus of this work lies on the magnetism in unconventional superconductors. The big question in this kind of superconductors is as magnetism influences the transition in the superconducting phase. During this thesis two different classes of compounds were investigated: iron-arsenides and ruthenates. The compounds of both have similarities to the famous cuprates. For the investigations of iron-arsenides the crystal structures of LiFeAs and Li0.95Fe0.05As were determined first. Afterwards the magnetic moments of both compounds as function of temperature and magnetic field and the spin density were measured. It was found out that the pure compound is a spin-singlet superconductor. The spin density is placed mainly at the iron atoms and can be described with the multipol-model. Additionally an impurity by iron atoms at interstitial places were found. For the non-stoichiometric compound the high magnetic moment below 156K could be confirmed. But the mail sin density is located at the position of the excess iron atom at interstitial positions. This positions changes with the magnetic field. This points to the fact that the high magnetic moment comes from the additional iron atoms which are formed in clusters. In addition, the crystal structure of REFeAsO (with RE=Ce, Pr and Nd) as a function of the temperature was examined. An orthorhombic transition was measured at 150 K. The precursors (which are also found in LaFeAsO) were seen. The strengthens of these precursors decreases with increasing size of the rare-earth atoms. For the ruthenates macroscopic investigations of the susceptibility and the electric resistivity of Ca3Ru0.9Ti0.1O7 were done. Moreover, the influence from the transition of the crystal structure was investigated. It turned out that the doping with titanium stabilizes the isolating phase which was already found in the pure connection. A jump by three scales was found in the electric resistivity and a change in the crystal structure (without changing

  11. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  12. Coherent detection of THz waves based on THz-induced time-resolved luminescence quenching in bulk gallium arsenide.

    Science.gov (United States)

    Chu, Zheng; Liu, Jinsong; Wang, Kejia

    2012-05-01

    A kind of photoluminescence quenching, in which the time-resolved photoluminescence is modulated by a THz pulse, has been theoretically investigated by performing the ensemble Monte Carlo method in bulk gallium arsenide (GaAs) at room temperature. The quenching ratio could reach up to 50% under a strong THz field (100  kV/cm). The range in which luminescence quenching is linearly proportional to the THz field could be over 60  kV/cm. On the basis of these results, a principle for THz modulation and coherent detection is proposed. PMID:22555695

  13. Retinal alterations produced by low level gallium arsenide laser exposure. Interim report, 1 May--31 December 1976

    Energy Technology Data Exchange (ETDEWEB)

    Beatrice, E.S.; Lund, D.J.; Talsma, D.M.

    1977-02-01

    The retinas of rhesus monkeys were subjected to irradiation by a prototype gallium arsenide (GaAs) laser training device. The laser device operated at 1600 Hz (pulse repetition frequency mode) or 132 Hz (pulse code mode) with nominal peak pulse power of 1 watt and 10 watts. Exposure durations ranged from 1.0 sec to 90 sec. The tissue reaction at the exposure site was characterized by the development of a pale gray clouding within 10 sec of initiation of the exposure. The nature of the retinal change could not be determined by ophthalmoscopic, histologic, or flourescein leakage techniques.

  14. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    Energy Technology Data Exchange (ETDEWEB)

    Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  15. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs2 (A = K, Rb)

    International Nuclear Information System (INIS)

    Highlights: • Zintl tetragonal phase ACdGeAs2 (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs2 (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices

  16. Plasma enhanced deposition of 'silicon nitride' for use as an encapsulant for silicon ion-implanted gallium arsenide

    International Nuclear Information System (INIS)

    Silicon nitride films have been produced by plasma enhanced chemical vapour deposition using silane and ammonia as the reactant gases in a Plasma-Therm PK1250PD machine. The compositions of the films have been investigated as a function of the silane to ammonia flow rate ratio used for deposition, using infra-red transmission and Auger electron spectroscopies. These techniques indicated that the plasma deposited films were silicon-rich and contained hydrogen. The oxygen content of the films was below the detection limit of Auger electron spectroscopy implying that it was less than 1%. Silicon ion-implanted semi-insulating gallium arsenide has been annealed using an approximately 1000 A thick film of plasma deposited silicon nitride as an encapsulant. This capped annealing technique has achieved 70% activations of 4 x 1012 cm-2, 200 keV silicon implants with sheet Hall mobilities of 4000 cm2 V-1 s-1 at room temperature. Free carrier concentration and Hall mobility profiles are presented. Unimplanted semi-insulating gallium arsenide samples have also been capped annealed in the same manner and maintained a sheet resistivity of greater than 107 Ω/square after annealing. (author)

  17. Analysis of Time Dependent Low Level Exposure to Gallium Arsenide on Blood ALAD activity, Glutathione and Lipid per oxidation levels in Rat Blood, Liver and Kidney

    Directory of Open Access Journals (Sweden)

    Braham Deo Gupta

    2015-06-01

    Full Text Available Gallium arsenide (GaAs, an intermetallic semiconductor has widespread applications in the electronic industry. GaAs has the ability to dissociate into its constitutive moieties, arsenic and gallium which might be responsible for the oxidative stress. The present study was aimed at evaluating, effect of gallium arsenide on blood ALAD activity, glutathione and lipid per oxidation levels in rat blood, liver and kidney on exposure of 1, 2 and 6 months. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased TBARS levels, decreased glutathione levels in blood and tissues. We also noted the decreased activity of ALAD in rat blood on exposure to gallium arsenide. The study demonstrates that the time dependent exposure to low level gallium arsenide led to increased in lipid per oxidation, decrease glutathione level and ALAD activity which concludes that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress in rats and exerts its toxicity in time dependent manner related to its dissolution and maximum toxicity by increasing the time period of exposure.

  18. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    International Nuclear Information System (INIS)

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 104 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 108 shots for electro-optic drivers. Much effort is currently being channeled in the study

  19. Pixel x-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experiment determination)

    International Nuclear Information System (INIS)

    Gallium Arsenide pixel detectors with an area of 170 x 320 microm2 and thickness of 5 microm, realized by molecular beam epitaxy, have been designed and tested with X- and γ rays. No significant charge trapping effects have been observed, and a charge collection efficiency of 100% has been measured. At room temperature an energy resolution of 671 eV full width at half maximum (FWHM) at 59.54 keV has been obtained, with an electronic noise of 532 eV FWHM. With the detector cooled to 243 K, the electronic noise is reduced to 373 eV FWHM, and the Kα and Kβ lines of the 55Fe spectrum can be resolved. The Fano factor for GaAs has been measured at room temperature with 59.5 keV photons yielding F = 0.12 ± 0.01

  20. Laser modulation of human immune system: inhibition of lymphocyte proliferation by a gallium-arsenide laser at low energy

    International Nuclear Information System (INIS)

    Cultured human lymphocytes were subjected to irradiation with a gallium-arsenide laser at energy fluence varying from 2.17 to 651 mJ/cm2, and the cell proliferation was assessed by [3H]thymidine incorporation. Both mitogenic proliferation in response to phytohemagglutinin and spontaneous cell proliferation were markedly inhibited by the laser irradiation at energy fluence as low as 10.85 mJ/cm2. Similarly, the functional response of cells to antigen stimulation in a one-way mixed-lymphocyte reaction was also diminished as a result of laser irradiation. The results indicate that laser irradiation at low energy can interfere with immune system in vitro, and similar modulation could potentially occur in human subjects exposed to laser irradiation in vivo

  1. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

    Science.gov (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  2. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I. [National Research University of Electronic Technology “MIET” (Russian Federation); Seibt, M. [Universität Göttingen, IV Physikalisches Institut (Germany); Kazakov, I. P.; Tsikunov, A. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-12-15

    The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

  3. Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method

    CERN Document Server

    Hartnett, J G; Floch, J -M Le; Krupka, J; Tobar, M E; Cros, D

    2009-01-01

    Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 +/- 0.081 ns and 1.098 +/- 0.063 ns, respectively, using this method.

  4. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  5. Structural anomalies in undoped gallium arsenide observed in high-resolution diffraction imaging with monochromatic synchrotron radiation

    Science.gov (United States)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.

    1989-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  6. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa

    2013-08-20

    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  7. High-performance organic/inorganic hybrid heterojunction based on Gallium Arsenide (GaAs) substrates and a conjugated polymer

    Science.gov (United States)

    Jameel, D. A.; Felix, J. F.; Aziz, M.; Al Saqri, N.; Taylor, D.; de Azevedo, W. M.; da Silva, E. F.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

    2015-12-01

    In this paper, we present an extensive study of the electrical properties of organic-inorganic hybrid heterojunctions. Polyaniline (PANI) thin films were deposited by a very simple technique on (1 0 0) and (3 1 1)B n-type Gallium Arsenide (GaAs) substrates to fabricate hybrid devices with excellent electrical properties. The hybrid devices were electrically characterized using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements in the temperature range 20-440 K. The analysis of I-V characteristics based on the thermionic emission mechanism has shown a decrease of the barrier height and an increase of the ideality factor at lower temperatures for both hybrid devices. The interface states were analyzed by series resistance obtained using the C-G-V methods. The interface state density (Dit) of PANI/(1 0 0) GaAs devices is approximately one order of magnitude higher than that of PANI/(3 1 1)B GaAs devices. This behaviour is attributed to the effect of crystallographic orientation of the substrates, and was confirmed by DLTS results as well. Additionally, the devices show excellent air stability, with rectification ratio values almost unaltered after two years of storage under ambient conditions, making the polyaniline an interesting conductor polymer for future devices applications.

  8. Enhancement of metal - semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition

    International Nuclear Information System (INIS)

    This study presents a method for surface passivation using silicon dioxide (SiO2). The proposed method has shown great effectiveness on metal - semiconductor barrier height enhancement. A high quality SiO2 layer is developed via liquid phase deposition, a method which naturally leaves a doping-level fluorine residue in the SiO2. The addition of fluorine to enhance the Schottky barrier height (SBH) is first discussed. Experimental results are presented. It is found that this fluorine addition enhances the Schottky barrier height, which allows a larger positive gate bias for enhancement mode metal - semiconductor field-effect transistors, thus permitting the fabrication of digital logic circuits with improved noise margins and relaxed tolerance with regard to device threshold voltage uniformity. The SBH to n-gallium arsenide (GaAS) is found to be approximately 0.7 eV. Finally, the effective barrier height of the metal - insulator - semiconductor structure reached 1.03 eV after annealing. The enhancement of SBH has been attributed to the formation of these stable interface layers. A model for fluorine-enhanced SiO2 SBH enhancement is also presented. [copyright] 2001 American Institute of Physics

  9. CO2 laser-based dispersion interferometer utilizing orientation-patterned gallium arsenide for plasma density measurements

    International Nuclear Information System (INIS)

    A dispersion interferometer based on the second-harmonic generation of a carbon dioxide laser in orientation-patterned gallium arsenide has been developed for measuring electron density in plasmas. The interferometer includes two nonlinear optical crystals placed on opposite sides of the plasma. This instrument has been used to measure electron line densities in a pulsed radio-frequency generated argon plasma. A simple phase-extraction technique based on combining measurements from two successive pulses of the plasma has been used. The noise-equivalent line density was measured to be 1.7 × 1017 m−2 in a detection bandwidth of 950 kHz. One of the orientation-patterned crystals produced 13 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 13 W of peak power. Two crystals arranged sequentially produced 58 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 37 W of peak power

  10. Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide

    Science.gov (United States)

    Hupfauer, T.; Matos-Abiague, A.; Gmitra, M.; Schiller, F.; Loher, J.; Bougeard, D.; Back, C. H.; Fabian, J.; Weiss, D.

    2015-06-01

    The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials. Spintronic devices, especially, benefit from the presence of interfaces--the reduced structural symmetry creates emergent spin-orbit fields that offer novel possibilities to control device functionalities. But where does the bulk end, and the interface begin? Here we trace the interface-to-bulk transition, and follow the emergence of the interfacial spin-orbit fields, in the conducting states of a few monolayers of iron on top of gallium arsenide. We observe the transition from the interface- to bulk-induced lateral crystalline magnetoanisotropy, each having a characteristic symmetry pattern, as the epitaxially grown iron channel increases from four to eight monolayers. Setting the upper limit on the width of the interface-imprinted conducting channel is an important step towards an active control of interfacial spin-orbit fields.

  11. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells.

    Science.gov (United States)

    Eyderman, Sergey; John, Sajeev

    2016-01-01

    We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm(2) is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10(3) cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%. PMID:27334045

  12. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

    Science.gov (United States)

    Eyderman, Sergey; John, Sajeev

    2016-01-01

    We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300–865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 103 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%. PMID:27334045

  13. A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    International Nuclear Information System (INIS)

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of AlxGa1-xAs. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10-12 amps at -1 V on a 3mm x 3mm diode, or a density of 1.1 x 10-11 amps cm-2, with many of the diode structures tested having nearly similar results. The PIN diodes were significantly better than the Schottky barrier device, which had six orders of magnitude higher dark current. Diodes were characterized in terms of their current-mode response to 5.5 MeV alpha particles FR-om 241-Americium. These radiation-induced currents were as high as 9.78 x 10-7 A cm-1 on a PIN device with an AlxGa1-xAs BSF. Simple PIN diodes had currents as high as 2.44 x 10-7 A cm-2, with thicker undoped layers showing better sensitivity. Boron coatings were applied, and response to neutrons tested at University of Michigan by Dr. Doug McGregor. Devices with PIN and Schottky barrier designs showed neutron detection efficiencies as high as 2% on 5 (micro)m thick devices, with no need for external bias voltages. PIN diodes showed higher breakdown voltages and lower noise characteristics than did the Schottky barrier design. Uniformity of

  14. Ternary arsenides based on platinum–indium and palladium–indium fragments of the Cu{sub 3}Au-type: Crystal structures and chemical bonding

    Energy Technology Data Exchange (ETDEWEB)

    Zakharova, Elena Yu.; Andreeva, Natalia A.; Kazakov, Sergey M. [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); Kuznetsov, Alexey N., E-mail: alexei@inorg.chem.msu.ru [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); N.S. Kurnakov Institute of General and Inorganic Chemistry of Russian Academy of Sciences, Leninskii pr. 31, 119991 Moscow (Russian Federation)

    2015-02-05

    Highlights: • Three metal-rich platinum–indium and palladium–indium arsenides were synthesized. • Their crystal structures were determined from powder XRD. • Electronic structures and bonding were studied using DFT/FP-LAPW calculations. • Multi-centered Pt–In or Pd–In bonding was revealed using ELF and ELI-D analysis. • Extra pairwise Pt–Pt interactions are observed only for Pt-based compounds. - Abstract: Three metal-rich palladium–indium and platinum–indium arsenides, Pd{sub 5}InAs, Pt{sub 5}InAs, and Pt{sub 8}In{sub 2}As, were synthesized using a high-temperature ampoule technique. Their crystal structures were determined from Rietveld analysis of powder diffraction data. All the compounds crystallize in tetragonal system with P4/mmm space group (Pd{sub 5}InAs: a = 3.9874(1) Å, c = 6.9848(2) Å, Z = 1, R{sub p} = 0.053; R{sub b} = 0.013; Pt{sub 5}InAs: a = 3.9981(2) Å, c = 7.0597(4) Å, Z = 1, R{sub p} = 0.058, R{sub b} = 0.016; Pt{sub 8}In{sub 2}As: a = 3.9872(3) Å, c = 11.1129(7) Å, Z = 1, R{sub p} = 0.047; R{sub b} = 0.014). The first two compounds belong to the Pd{sub 5}TlAs structure type, while the third one is isotypic with the recently discovered Pd{sub 8}In{sub 2}Se. Main structural units in all arsenides are indium-centered [TM{sub 12}In] cuboctahedra (TM = Pd, Pt) of the Cu{sub 3}Au type, single- and double-stacked along the c axis in TM{sub 5}InAs and Pt{sub 8}In{sub 2}As, respectively, alternating with [TM{sub 8}As] rectangular prisms. DFT electronic structure calculations predict all three compounds to be 3D metallic conductors and Pauli-like paramagnets. According to the bonding analysis based on the electron localization function and electron localizability indicator topologies, all compounds feature multi-centered interactions between transition metal and indium in their heterometallic fragments. Additionally, pairwise interactions between platinum atoms are also observed, indicating a somewhat more localized bonding

  15. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    substrates. The crystal structure of the NWs has also been investigated, and a method for obtaining pure wurtzite NWs with a well controlled diameter and length is presented. For self-assisted growth of InAs NWs a method for enhanced control of the nanowire morphology by pre-treatment of the oxide layer...... is presented. A series of experiments with formation of a droplet on top of the wires has been carried out and pyramidal shaped structures at the NW top with pure zinc blende crystal structure are observed. A novel in-situ experiment with fabrication of NWs and simultanous characterization using x...

  16. Gallium arsenide pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bates, R.; DaVia, C.; O`Shea, V.; Raine, C.; Smith, K. [Glasgow Univ. (United Kingdom). Dept. of Physics and Astronomy; Campbell, M.; Cantatore, E.; Heijne, E.M.; Middelkamp, P.; Ropotar, I.; Scharfetter, L.; Snoeys, W. [CERN, ECP Div., CH-1211 Geneva 23 (Switzerland); D`Auria, S.; Papa, C. del [Department of Physics, University of Udine and INFN Trieste, Via delle Scienze 208, I-33100 Udine (Italy); RD8 Collaboration

    1998-06-01

    GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV {pi}{sup -} beam. The detection efficiency was 99.2% with a nominal threshold of 5000 e{sup -}. (orig.) 10 refs.

  17. Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

    International Nuclear Information System (INIS)

    Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl4 or VOCl3 with tBuAsH2. Using the vanadium precursor VCl4, films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl4, were silver in appearance. The films deposited using VOCl3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl4 or VOCl3 and tBuAsH2. • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

  18. A novel wide range, real-time neutron fluence monitor based on commercial off the shelf gallium arsenide light emitting diodes

    International Nuclear Information System (INIS)

    Displacement damage produced by high-energy neutrons in gallium arsenide (GaAs) light emitting diodes (LED) results in the reduction of light output. Based on this principle we have developed a simple, cost effective, neutron detector using commercial off the shelf (COTS) GaAs-LED for the assessment of neutron fluence and KERMA at critical locations in the vicinity of the 230 MeV proton therapy cyclotron operated by Westdeutsches Protonentherapiezentrum Essen (WPE). The LED detector response (mV) was found to be linear within the neutron fluence range of 3.0x108-1.0x1011 neutron cm-2. The response of the LED detector was proportional to neutron induced displacement damage in LED; hence, by using the differential KERMA coefficient of neutrons in GaAs, we have rescaled the calibration curve for two mono-energetic sources, i.e. 1 MeV neutrons and 14 MeV neutrons generated by D+T fusion reaction. In this paper we present the principle of the real-time GaAs-LED based neutron fluence monitor as mentioned above. The device was calibrated using fast neutrons produced by bombarding a thick beryllium target with 14 MeV deuterons from a TCC CV 28 medical cyclotron of the Strahlenklinik University Hospital Essen.

  19. Generation System of Concentrator Photovoltaic Based on Gallium Arsenide Cells%基于砷化镓电池的聚光光伏发电系统

    Institute of Scientific and Technical Information of China (English)

    宁铎; 王辉辉; 黄建兵; 李明勇

    2011-01-01

    Solar photovoltaic power generation system for the problem of low utilization, a generation system of concentrator photovoltaic (CPV) based on gallium arsenide (GaAs) cells can be designed. The system consists of concentrating power modules, solar tracking module, inverter module. Fresnel lens concentrator power generation module 400 times by concentrating light in lcm2 GaAs after the battery,the realization of power function; sun-tracking modules and optical sensors from the head to ensure that the basic vertical sunlight through the Fresnel lens; GaAs inverter module converts DC battery AC issued. After testing, the system reached 20. 2% conversion efficiency of solar, inverter part of the realization of the exchange function of the DC variable.%针对光伏发电系统中太阳能利用率低的问题,设计了一种基于砷化镓(GaAs)电池的聚光光伏(CPV)发电系统;该系统由聚光发电模块、太阳跟踪模块和逆变模块组成;聚光发电模块采用菲涅尔透镜400倍聚光以后照射在1Cmz的砷化镓电池上,实现发电功能;太阳跟踪模块由云台和光电传感器组成,保证太阳光基本垂直通过菲涅尔透镜,逆变模块将砷化镓电池发出的直流电转换成交流电;经过测试.该系统太阳能转换效率达到20.2%,逆变部分实现了直流变交流功能.

  20. Quantificaion of ion diffusion in gallium arsenide-based spintronic Light-Emitting Diode devices using time-of-flight secondary ion mass spectrometry

    Science.gov (United States)

    Cogswell, Jeffrey Ryan

    Depth profiling using Secondary Ion Mass Spectrometry (SIMS) is a direct method to measure diffusion of atomic or molecular species that have migrated distances of nanometers/micrometers in a specific material. For this research, the diffusion of Mn, sequentially Ga ions, in Gallium Arsenide (GaAs)-based spin Light Emitting Diode (LED) devices is studied by quantitative Time-of-Flight (ToF) SIMS. The goal is to prove conclusively the driving force and mechanism behind Mn diffusion in GaAs by quantifying the diffusion of these ions in each device. Previous work has identified two competing processes for the movement of Mn in GaAs: diffusion and phase separation. The process is dependent on the temperature the sample is exposed to, either by post-annealing, or during the molecular beam epitaxy (MBE) growth process. The hypothesis is that Manganese Arsenide (MnAs) is thermodynamically more stable than randomly distributed Mn ions in GaAs, and that by annealing at a certain temperature, a pure MnAs layer can be produced from a GaMnAs layer in a working spin LED device. Secondly, the spin efficiencies will be measured and the difference will be related to the formation of a pure MnAs layer. The first chapter of this dissertation discusses the history of spintronic devices, including details on the established methods for characterization, the importance for potential application to the semiconductor industry, and the requirements for the full implementation of spintronic devices in modern-day computers. MnAs and GaMnAs devices are studied, their preparation and properties are described, and the study's experimental design is covered in the latter part of Chapter 1. Chapter 2 includes a review of diffusion in semiconductors, including the types of diffusion, mechanisms they follow, and the different established experimental methods for studying diffusion. The later sections include summaries of Mn diffusion and previous studies investigating Mn diffusion in different

  1. Growing Gallium Arsenide On Silicon

    Science.gov (United States)

    Radhakrishnan, Gouri

    1989-01-01

    Epitaxial layers of high quality formed on crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

  2. (121,123)Sb and (75)As NMR and NQR investigation of the tetrahedrite (Cu12Sb4S13)--Tennantite (Cu12As4S13) system and other metal arsenides.

    Science.gov (United States)

    Bastow, T J; Lehmann-Horn, J A; Miljak, D G

    2015-10-01

    This work is motivated by the recent developments in online minerals analysis in the mining and minerals processing industry via nuclear quadrupole resonance (NQR). Here we describe a nuclear magnetic resonance (NMR) and NQR study of the minerals tennantite (Cu12As4S13) and tetrahedrite (Cu12 Sb4S13). In the first part NQR lines associated with (75)As in tennantite and (121,123)Sb isotopes in tetrahedrite are reported. The spectroscopy has been restricted to an ambient temperature studies in accord with typical industrial conditions. The second part of this contribution reports nuclear quadrupole-perturbed NMR findings on further, only partially characterised, metal arsenides. The findings enhance the detection capabilities of NQR based analysers for online measurement applications and may aid to control arsenic and antimony concentrations in metal processing stages. PMID:26453410

  3. Superconducting properties of iron–platinum–arsenides Ca{sub 10}(Pt{sub n}As{sub 8})(Fe{sub 2−x}Pt{sub x}As{sub 2}){sub 5} (n = 3, 4)

    Energy Technology Data Exchange (ETDEWEB)

    Tamegai, T., E-mail: tamegai@ap.t.u-tokyo.ac.jp [Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ding, Q.P.; Taen, T.; Ohtake, F.; Inoue, H.; Tsuchiya, Y.; Mohan, S.; Sun, Y.; Nakajima, Y.; Pyon, S. [Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Kitamura, H. [Radiation Measurement Research Section, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan)

    2013-11-15

    Highlights: •Iron–platinum arsenides Ca{sub 10}(Pt{sub n}As{sub 8})(Fe{sub 2−x}Pt{sub x}As{sub 2}){sub 5} (n = 3, 4) have been grown and characterized. •Due to modest electromagnetic anisotropy, resistive transition shows broadening. •Magneto-optical imaging confirm homogeneous superconducting states. •Proton irradiation into n = 3 compound leads to T{sub c} suppression by ∼2 K and J{sub c} enhancement by a factor of three. -- Abstract: High-quality single crystals of iron–platinum arsenides Ca{sub 10}(Pt{sub n}As{sub 8})(Fe{sub 2−x}Pt{sub x}As{sub 2}){sub 5} (n = 3, 4) have been grown and their superconducting properties are characterized. The n = 4 and n = 3 compounds have T{sub c}’s ∼ 30 K and 13 K, respectively. Reflecting a modest anisotropy of the system, resistive transition for H//c-axis shows modest broadening in both systems. Magneto-optical imaging shows that superconductivity in both compounds is rather homogeneous, with the critical current density, J{sub c}, ∼1 × 10{sup 5} A/cm{sup 2} at 5 K under self-field. Proton irradiation up to 4 × 10{sup 16} cm{sup −2} into n = 3 compound is found to have T{sub c} suppression by ∼2 K and J{sub c} enhancement by a factor of three at low temperatures.

  4. Barium iron arsenide, barium cobalt arsenide, barium nickel arsenide single crystals and superconductivity upon cobalt doping

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip [Los Alamos National Laboratory; Sefat, A S [ORNL; Mcguire, M M [ORNL; Sales, B [ORNL; Jin, R [ORNL; Mandrus, D [ORNL

    2009-01-01

    The crystal structure and physical properties of BaFe{sub 2}As{sub 2}, BaCo{sub 2}As{sub 2}, and BaNi{sub 2}As{sub 2} single crystals are surveyed. BaFe{sub 2}As{sub 2} gives a magnetic and structural transition at T{sub N} = 132(1) K, BaCo{sub 2}As{sub 2} is a paramagnetic metal, while BaNi{sub 2}As{sub 2} has a structural phase transition at T{sub 0} = 131 K, followed by superconductivity below {Tc} = 0.69 K. The bulk superconductivity in Co-doped BaFe{sub 2}As{sub 2} below {Tc} = 22 K is demonstrated by resistivity, magnetic susceptibility, and specific heat data. In contrast to the cuprates, the Fe-based system appears to tolerate considerable disorder in the transition metal layers. First principles calculations for BaFe{sub 1.84}Co{sub 0.16}As{sub 2} inter-band scattering due to Co is weak.

  5. New quaternary arsenide oxides with square planar coordination of gold(I) - structure, (197)Au Mössbauer spectroscopic, XANES and XPS characterization of Nd10Au3As8O10 and Sm10Au3As8O10.

    Science.gov (United States)

    Bartsch, Timo; Niehaus, Oliver; Johrendt, Dirk; Kobayashi, Yasuhiro; Seto, Makoto; Abdala, Paula M; Bartsch, Manfred; Zacharias, Helmut; Hoffmann, Rolf-Dieter; Gerke, Birgit; Rodewald, Ute Ch; Pöttgen, Rainer

    2015-03-28

    The quaternary gold(I) arsenide oxides Nd10Au3As8O10 and Sm10Au3As8O10 were synthesized in sealed quartz ampoules from the rare earth (RE) elements, their appropriate sesquioxides, arsenic, arsenic(III) oxide and finely dispersed gold at maximum annealing temperatures of 1223 K. Both structures were refined from X-ray single crystal diffractometer data at room temperature and at 90 K. Nd10Au3As8O10 and Sm10Au3As8O10 crystallize with a new structure type that derives from the BaAl4 structure through distortions and formation of ordered vacancies. The structures consist of stacked polycationic [RE10O10](10+) layers with oxygen in tetrahedral rare earth coordination and polyanionic [Au(I)3(As2)4](10-) layers with gold in square planar or rectangular planar coordination of four arsenic dumbbells (255 pm As1-As2). In contrast to the well known ionic rare earth oxide layers, the gold arsenide layers rather show covalent bonding and account for the metallic nature of these two new arsenide oxides. This is confirmed by electronic structure calculations and resistivity measurements. The oxidation state of gold was investigated by (197)Au Mössbauer, X-ray absorption near edge structure (XANES) and photoelectron (XPS) spectroscopy. Due to missing comparative gold arsenide compounds, the monovalent gold phosphide oxides RE2AuP2O were measured for comparison. The XANES measurements additionally comprise monovalent gold arsenides REAuAs2. The XPS study contains BaAuAs as reference compound instead. Combination of all data clearly indicates Au(I), which was not observed in square planar coordination up to now. Temperature dependent magnetic susceptibility data show Curie-Weiss paramagnetism for Nd10Au3As8O10 and no magnetic ordering down to 2.5 K. Sm10Au3As8O10 shows the typical Van Vleck type paramagnetism for samarium compounds along with a transition to an antiferromagnetically ordered state at TN = 8.6 K. PMID:25716906

  6. Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa

    International Nuclear Information System (INIS)

    Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni5−xAs2 (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P63mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å3. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd5Sb2 structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni4.75(As1.93Fe0.05Sb0.02). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral

  7. Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni{sub 5−x}As{sub 2} (x = 0.25), from the Bon Accord oxide body, South Africa

    Energy Technology Data Exchange (ETDEWEB)

    Bindi, Luca, E-mail: luca.bindi@unifi.it [Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Tredoux, Marian [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Zaccarini, Federica [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria); Miller, Duncan E. [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Garuti, Giorgio [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria)

    2014-07-15

    Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni{sub 5−x}As{sub 2} (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6{sub 3}mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å{sup 3}. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd{sub 5}Sb{sub 2} structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni{sub 4.75}(As{sub 1.93}Fe{sub 0.05}Sb{sub 0.02}). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral.

  8. Oxidation-reduction properties of americium, curium, berkelium, californium, einsteinium and fermium, and thermodynamic consequences for the 5f series

    International Nuclear Information System (INIS)

    The amalgamation of 5f elements from Am to Fm has been studied by using 241Am, 244Cm, 249Bk, 249Cf, 252Cf, 253Es, 254Es, 252Fm and 255Fm with two electrochemical methods, radiocoulometry and radiopolarography, perfectly adapted to investigate extremely diluted solutions when the concentration of electroactive species is as low as 10-16M. The theory of radiocoulometry has been developed in the general cases of reversible and irreversible electrode process. It has been used to interpret the experimental data on the kinetic curves of amalgamation, and to estimate the standard rate constant of the electrode process in complexing medium (citric). On the other hand the radiopolarographic method has been applied to study the mechanism of reduction at the dropping mercury electrode of cations M3+ in aqueous medium to the metal M with formation of amalgam. The results are exploited into two directions: 1- Acquisition of some data concerning the oxidation-reduction properties of elements from Am to Fm. Therefore the standard electrode E0 [M(III-0)] potentials for Bk, Cf and Es, and the standard electrode E0 [M(II-0)] potential for Fm are estimated and the relative stability of each oxidation state (from II to VII) of 5f elements is discussed; 2- Acquisition of unknown thermodynamic data on transcalifornium elements. Correlations between 4f and 5f elements are precised and some divergences appear for the second half of 4f and 5f series (i.e. for 65<=Z<=71 and 97<=Z<=103)

  9. Evaluation of thermal neutron cross-sections and resonance integrals of protactinium, americium, curium, and berkelium isotopes

    International Nuclear Information System (INIS)

    Data on the thermal neutron fission and capture cross-sections as well as their corresponding resonance integrals are reviewed and analysed. The data are classified according to the form of neutron spectra under investigation. The weighted mean values of the cross-sections and resonance integrals for every type of neutron spectra were adopted as evaluated data. (author). 87 refs, 2 tabs

  10. Efficient injection of spin-polarized electrons from manganese arsenide contacts into aluminum gallium arsenide/gallium arsenide spin LEDs

    Science.gov (United States)

    Schweidenback, Lars

    In this thesis we describe two spectroscopic projects project on semiconductor heterostructures, as well as putting together and testing a micro-photoluminescence/7 tesla magnet system for the study of micron size two-dimensional crystals. Below we discuss the three parts in more detail. i) MnAs-based spin light emitting diodes. We have studied the injection of spin-polarized electrons from a ferromagnetic MnAs contact into an AlGaAs(n)/GaAs(i)/AlGaAs(p) n-i-p light emitting diode. We have recorder the emitted electroluminescence as function of magnetic field applied at right angles to the device plane in the 7-300 K temperature range. It was found that at 7 Kelvin the emitted light is circularly polarized with a polarization that is proportional to the MnAs contact magnetization with a saturation value of 26% for B > 1.25 tesla. The polarization persists up to room temperature with a saturation value of 6%. ii) Optical Aharonov-Bohm effect in InGaAs quantum wells. The excitonic photoluminescence intensity from InGaAs quantum wells as function of magnetic field exhibits two local maxima superimposed on a decreasing background. The maxima are attributed to the optical Aharonov-Bohm effect of electrons orbiting around a hole localized at the center of an Indium rich InGaAs islands detected by cross sectional scanning tunneling microscopy. Analysis of the position of the maxima yields a value of the electron orbit radius. iii) Micro-Photoluminescence. We have put together a micro-photoluminescence /7 tesla system for the study of two dimensional crystals. The samples are placed inside a continuous flow cryostat whose tail is positioned in the bore of the 7 tesla magnet. A microscope objective is used to focus the exciting laser light and collect the emitted photoluminescence. The system was tested by recording the photoluminescence spectra of WS2 and WSe 2 monolayers at T = 77 K.

  11. Nonlocal ordinary magnetoresistance in indium arsenide

    International Nuclear Information System (INIS)

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB)2 at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×104% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T−1 to 45.3 T−1. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure. - Highlights: • Ordinary magnetoresistance could be enhanced by nonlocal geometry by 3.6 times. • Linear field dependence at high field could be realized in nonlocal geometry. • Nonlocal MR was realized by polarity-conserved accumulating charges on boundaries • Nonlocal MR in InAs reached 1.8×104% at 5 T. • Nonlocal MR devices could be used in high-field sensing applications

  12. Phonon heat transport in gallium arsenide

    Indian Academy of Sciences (India)

    Richa Saini; Vinod Ashokan; B D Indu; R Kumar

    2012-03-01

    The lifetimes of quantum excitations are directly related to the electron and phonon energy linewidths of a particular scattering event. Using the versatile double time thermodynamic Green’s function approach based on many-body theory, an ab-initio formulation of relaxation times of various contributing processes has been investigated with newer understanding in terms of the linewidths of electrons and phonons. The energy linewidth is found to be an extremely sensitive quantity in the transport phenomena of crystalline solids as a collection of large number of scattering processes, namely, boundary scattering, impurity scattering, multiphonon scattering, interference scattering, electron–phonon processes and resonance scattering. The lattice thermal conductivities of three samples of GaAs have been analysed on the basis of modified Callaway model and a fairly good agreement between theory and experimental observations has been reported.

  13. Epitaxial growth dynamics in gallium arsenide

    Science.gov (United States)

    Ballestad, Anders

    The problem of a complete theory describing the far-from-equilibrium statistical mechanics of epitaxial crystal growth remains unsolved. Besides its academic importance, this problem is also interesting from the point of view of device manufacturing. In order to improve on the quality and performance of lateral nanostructures at the lengthscales required by today's technology, a better understanding of the physical mechanisms at play during epitaxial growth and their influence on the evolution of the large-scale morphology is required. In this thesis, we present a study of the morphological evolution of GaAs (001) during molecular beam epitaxy by experimental investigation, theoretical considerations and computational modeling. Experimental observations show that initially rough substrates smooth during growth and annealing towards a steady-state interface roughness, as dictated by kinetic roughening theory. This smoothing indicates that there is no need for a destabilizing step-edge barrier in this material system. In fact, generic surface growth models display a much better agreement with experiments when a weak, negative barrier is used. We also observe that surface features grow laterally, as well as vertically during epitaxy. A growth equation that models smoothing combined with lateral growth is the nonlinear, stochastic Kardar-Parisi-Zhang (KPZ) equation. Simulation fits match the experimentally observed surface morphologies quite well, but we argue that this agreement is coincidental and possibly a result of limited dynamic range in our experimental measurements. In light of these findings, we proceed by developing a coupled growth equations (CGE) model that describes the full morphological evolution of both flat and patterned starting surfaces. The resulting fundamental model consists of two coupled, spatially dependent rate equations that describe the interaction between diffusing adatoms and the surface through physical processes such as adatom diffusion, deposition, and incorporation and detachment at step edges. In the low slope, small amplitude limit, the CGE model reduces to a nonlinear growth equation similar to the KPZ equation. From this, the apparent applicability of the KPZ equation to surface shape evolution is explained. The CGE model is based on fundamental physical processes, and can therefore explain the underlying physics, as well as describe macroscopic pattern evolution during growth.

  14. Nonlocal ordinary magnetoresistance in indium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Pan [School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China); Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yuan, Zhonghui; Wu, Hao; Ali, S.S. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wan, Caihua, E-mail: wancaihua@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Ban, Shiliang, E-mail: slban@imu.edu.cn [School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China)

    2015-07-01

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB){sup 2} at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×10{sup 4}% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T{sup −1} to 45.3 T{sup −1}. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure. - Highlights: • Ordinary magnetoresistance could be enhanced by nonlocal geometry by 3.6 times. • Linear field dependence at high field could be realized in nonlocal geometry. • Nonlocal MR was realized by polarity-conserved accumulating charges on boundaries • Nonlocal MR in InAs reached 1.8×10{sup 4}% at 5 T. • Nonlocal MR devices could be used in high-field sensing applications.

  15. Optical Spectroscopy of Indium Gallium Arsenide/gallium Arsenide Quantum Wells

    Science.gov (United States)

    Adams, Stephen J. A.

    1992-01-01

    Available from UMI in association with The British Library. In_{rm x}Ga _{rm 1-x}As/GaAs quantum wells have been studied using optical and magneto -optical techniques. Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been used to determine the valence band offset in these heterostructures which was found to vary between 0.4 for wells with indium concentration x = 0.08 to 0.2 for wells with x = 0.21. An interband magneto-luminescence oscillation (IMLO) technique has been applied to the study of undoped 'multi-single' quantum well samples and the theoretically predicted peaked nature of the exciton binding energy as a function of well width has been observed for the first time in any material system. The conduction band effective mass was also determined in the same samples using Optically Detected Cyclotron Resonance (ODCR) and found to be constant over the range of well widths studied at a value close to that of the bulk, with a suitable correction for strain effects. This result was then combined with the IMLO data, fitted to the theory of Akimoto and Hasegawa, to deduce the hole mass as a function of well width, which was found to increase significantly in narrower wells. PL and PLE data was also obtained from modulation doped quantum wells. The PL involving transitions from highly populated subbands was found to be much broader than the PLE data from unpopulated subbands, where the transitions were strongly excitonic. Furthermore the PL linewidth in n-type samples was somewhat greater than that in p-type samples because of the difference in particle effective mass. Comparison of the Fermi energy deduced from PL in n-type samples with Hall and Shubnikov-de Haas measurements suggested an enhancement in the density-of -states over the value in undoped wells. Interesting effects were also observed in the quantum well luminescence arising from an interaction with GaAs deep levels in the barrier layers. A novel method was used to determine the effective mass renormalisation due to the presence of a two-dimensional electron gas in modulation-doped quantum wells. The technique took advantage of the presence, in the samples studied, of parity-allowed transitions between the two lowest conduction subbands and the lowest valence subband. Landau splittings were observed in the n_{rm c } = 1 to n_{rm v } = 1 recombination in PL and in the n _{rm c} = 2 to n _{rm v} = 1 recombination in PLE, and a comparison of the reduced masses derived from the two sets of Landau fans allowed the effective mass enhancement to be determined. Enhancements of the order of 20%, independent of magnetic field, have been observed in samples with well sheet carrier density of approximately 10^{12}cm ^{-2}.

  16. Galvanomagnetic Properties and Magnetic Domain Structure of Epitaxial Manganese Arsenide Films on Gallium ARSENIDE(001)

    Science.gov (United States)

    Park, Moon Chan

    We have studied galvanomagnetic properties and magnetic domain structure of epitaxial ferromagnetic MnAs thin films on GaAs(001) substrates by molecular beam epitaxy in the thickness range 20-200nm. Using data reported here on ordinary and extraordinary Hall effect to determine the field required for perpendicular saturation and using saturation magnetizations reported elsewhere, we determined the shape anisotropy constant in the basal plane of the hexagonal structure to be 3.7(0.6)times10 ^5 erg/cm^3 and the surface anisotropy constant to be -1.3(0.4) erg/cm^2. The negative sign indicates thin enough films will be perpendicularly magnetized. By using magnetic force microscopy on a 100 nm type-B MnAs film we found stripe domains with 180^circ Bloch walls parallel to the easy direction, thereby avoiding the hard c-axis, which in type-B is tilted up 39^circ. out of the film plane. The widths of the domains and the walls are 4.0(0.3) μm and 95(6) nm, respectively. Similar MFM results were obtained for a 100 nm type-A MnAs thin film having hard c-axis in plane, with an average domain width of 11.7(1.2) mum. This domain width agrees with a calculated value using the effective anisotropy constant data. Magnetoresistance versus field shows a linear past beyond the coercive field H _{c} (VSM value +/-324Oe) due to s-d electron scattering as explained by N. F. Mott. Peaks occur at the transition region observed in the vicinity of H_ {c} in the VSM hysteresis loop and are centered at about H_{c}. The peaks are attributed to electron scattering from the domain walls. The electrical resistance showed a rapid increase with temperature beginning about 5 degrees below the Curie temperature (40^circ C) caused by the change in crystal structure from hexagonal to orthorhombic. The resistivities are, respectively, 300(24) and 375(30) muOmega -cm. Comparison with bulk values indicates the large lower temperature value is partly due to the presence of some orthorhombic phase observed in x-ray studies.

  17. Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

    Directory of Open Access Journals (Sweden)

    Luciana Chucre Gentile

    2004-12-01

    Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M

  18. THE EFFECT OF GALLIUM-ARSENIDE LASER IRRADIATION ON ODONTOGENESIS

    OpenAIRE

    Eman Adnan Mustafa; Sausan Al Kawas

    2010-01-01

    The applications of lasers in dentistry show that dental structures react differently to various types of laser. This study explores the effect of gallium-arsenate (GaAs) laser radiation on rats’ incisor teeth.A total number of 20 rats, aged 1-21 days, are divided into five groups; one control group (4 rats) and four laser groups (a total of 16 rats). Laser groups were exposed to 60 seconds of laser radiation on alternate days from day 1 till day 19. The groups were sacrificed at different ag...

  19. Radiation annealing of gallium arsenide implanted with sulphur

    CERN Document Server

    Ardyshev, V M

    2002-01-01

    Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

  20. Investigation of spin transport and accumulation in aluminum gallium arsenide

    Science.gov (United States)

    Misuraca, Jennifer

    This dissertation describes spin injection, transport, and detection experiments from Fe electrodes into a bulk AlGaAs channel. This semiconducting alloy is one of a class of persistent photoconductors, chosen as the spin transport medium because its carrier density can be tuned in a controlled manner via photoexcitation through the metal to insulator transition (MIT) in situ. This allows one to determine the dependence of spin lifetime on a variety of external parameters including carrier density, all on one sample. This research represents the first electrical spin-dependent measurements in this material and describes the dependence of the Hanle signal size and spin lifetime on bias, temperature, and carrier density. The photoexcitation needed to change the carrier density in this material comes from an infrared light-emitting diode (IR LED). The first step of this project was to characterize the new, highly Si doped Al0.3Ga 0.7As heterostructures, in order to determine how the illumination of the sample will affect the parameters of the material. To complete this study, Hall crosses were fabricated from the AlGaAs material and the transport properties were measured between 350 mK and 165 K. The resistivity, carrier density, and mobility were determined as a function of temperature for a variety of different illumination times. From this data, the MIT, scattering mechanisms, and the shape of the band tail of the density of states (DOS) were investigated. In fact, this is the first work to electrically probe the DOS in AlGaAs. Once the materials were characterized, they were used to fabricate lateral spin transport devices. Spin transport and accumulation were studied in detail via Hanle effect measurements, which measure the dephasing of electron spins in a perpendicular magnetic field. From these measurements, the spin lifetime of the material can be calculated, and is in the nanosecond range for all measured carrier densities. The spin lifetimes are measured using three distinct measurement configurations which all give consistent results. The dependence of spin lifetime and Hanle signal size are reported as a function of bias, temperature, and carrier density. This is the first spin transport experiment using a persistently photoconductive material as the spin transport channel in order to change the carrier density of the material in situ. The research in this dissertation successfully provides a framework for the continuation of spin injection and detection studies in this and other alloy semiconductors, and provides insight into how the spin lifetime depends on the doping levels in semiconductors.

  1. Gallium arsenide based surface plasmon resonance for glucose monitoring

    Science.gov (United States)

    Patil, Harshada; Sane, Vani; Sriram, G.; Indumathi, T. S; Sharan, Preeta

    2015-07-01

    The recent trends in the semiconductor and microwave industries has enabled the development of scalable microfabrication technology which produces a superior set of performance as against its counterparts. Surface Plasmon Resonance (SPR) based biosensors are a special class of optical sensors that become affected by electromagnetic waves. It is found that bio-molecular recognition element immobilized on the SPR sensor surface layer reveals a characteristic interaction with various sample solutions during the passage of light. The present work revolves around developing painless glucose monitoring systems using fluids containing glucose like saliva, urine, sweat or tears instead of blood samples. Non-invasive glucose monitoring has long been simulated using label free detection mechanisms and the same concept is adapted. In label-free detection, target molecules are not labeled or altered, and are detected in their natural forms. Label-free detection mechanisms involves the measurement of refractive index (RI) change induced by molecular interactions. These interactions relates the sample concentration or surface density, instead of total sample mass. After simulation it has been observed that the result obtained is highly accurate and sensitive. The structure used here is SPR sensor based on channel waveguide. The tools used for simulation are RSOFT FULLWAVE, MEEP and MATLAB etc.

  2. The effects of radiation on gallium arsenide radiation detectors

    International Nuclear Information System (INIS)

    Semi-insulating, undoped, liquid encapsulated Czochralski (SI-U LEC) GaAs detectors have been irradiated with 1 MeV neutrons, 24 GeV/c protons, and 300 MeV/c pions. The maximum fluences used were 6 x 1014, 3 x 1014, and 1.8 x 1014 particles/cm2, respectively. For all three types of irradiation, the charge collection efficiencies (cce) of the detector are reduced due to the reduction in the electron and hole mean free paths. Pion and proton irradiations produce a greater reduction in cce than neutron irradiation, with the pions having the greatest effect. The effect of annealing the detectors at room temperature, at 200 C and at 450 C with a flash lamp have been shown to reduce the leakage current and increase the cce of the irradiated detectors. The flash-lamp anneal produced the greatest increase in the cce from 26% to 70% by increasing the mean free path of the electrons. Two indium-doped samples were irradiated with 24 GeV/c protons and demonstrated no improvement over SI-U GaAs with respect to post-irradiation cce. (orig.)

  3. Radiative recombination and photon recycling in gallium arsenide solar cells

    Science.gov (United States)

    Lundstrom, M. S.; Melloch, M. R.; Lush, G. B.; Patkar, M. P.; Young, M.; Durbin, S. M.; Gray, J. L.; MacMillan, H. F.; Keyes, B. M.; Levi, D. H.; Ahrenkiel, R. K.

    1992-12-01

    This talk reviews experimental work to develop a detailed understanding of radiative recombination in n-GaAs. Photoluminescence decay studies of minority carrier lifetimes versus doping in n-GaAs are presented. We show that when the substrate is removed by etching, photon recycling is enhanced, and lifetimes increase by nearly a factor of 10. The doping-dependent absorption coefficient is measured, and detailed balance arguments are used to relate absorption and recombination. Modeling surfaces, verified by comparison with experiments, are used to examine the effects of recycling in conventional solar cells and to explore new design options.

  4. Ion implantation fabrication of gallium arsenide integrated optical components

    International Nuclear Information System (INIS)

    Proton implantation of n-type GaAs produces compensation of the free carriers in the implanted region. This compensation leads to a change in the refractive index of the implanted layer, making it suitable for optical waveguiding. Based upon the solid-state theories criteria presented, low-loss single-mode optical waveguides were developed. The results of this work include cutoff conditions and a relation for propagation loss versus substitute doping for both planar and channel waveguides at three particular wavelengths of interest. The design techniques are applicable for obtaining waveguide designs for the entire infrared range of 1 to 12 μm. These waveguides can then be used to form the integrated optical building block in a variety of optoelectronic device applications, such as the parallel-channel directional coupler analyzed as part of this work. Excellent agreement between theory and experiment was obtained. Results indicate that optimum optical and electrical properties can be obtained in planar and channel waveguides through use of the design and analysis techniques developed, and through careful control of implantation and substrate parameters

  5. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    CERN Document Server

    Foulon, F; Brullot, B; Petit, P; Bergonzo, P; Rubbelynck, C

    1999-01-01

    We have investigated the influence of spontaneous low frequency oscillations (LFO, f approx 0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E approx 1.2 MeV, tau sub F sub W sub H sub M =30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x10 sup 1 sup 5 neutrons/cm sup 2) showed no LFOs. It is suggested that interactions between the propagatin...

  6. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    Energy Technology Data Exchange (ETDEWEB)

    Foulon, F.; Flicstein, J.; Brullot, B.; Petit, P.; Bergonzo, P.; Rubbelynck, C

    1999-07-01

    We have investigated the influence of spontaneous low frequency oscillations (LFO, f{approx}0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E{approx}1.2 MeV, {tau}{sub FWHM}=30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x10{sup 15} neutrons/cm{sup 2}) showed no LFOs. It is suggested that interactions between the propagating domains and the highly defective GaAs bulk control the LFO characteristics. Gamma-ray sensitivity, in transient mode, versus bias voltage of PCDs was also found to be correlated to LFOs, showing that high-field behavior of GaAs can be used to predict the optimum operating bias of the PCDs.

  7. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    International Nuclear Information System (INIS)

    We have investigated the influence of spontaneous low frequency oscillations (LFO, f∼0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E∼1.2 MeV, τFWHM=30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x1015 neutrons/cm2) showed no LFOs. It is suggested that interactions between the propagating domains and the highly defective GaAs bulk control the LFO characteristics. Gamma-ray sensitivity, in transient mode, versus bias voltage of PCDs was also found to be correlated to LFOs, showing that high-field behavior of GaAs can be used to predict the optimum operating bias of the PCDs

  8. Gallium arsenide 55Fe X-ray-photovoltaic battery

    OpenAIRE

    Butera, S.; Lioliou, G; Barnett, A M

    2016-01-01

    The effects of temperature on the key parameters of a prototype GaAs 55Fe radioisotope X-ray microbattery were studied over the temperature range -20 °C to 70 °C. A p-i-n GaAs structure was used to collect the photons from a 254 Bq 55Fe radioisotope X-ray source. Experimental results showed that the open circuit voltage and the short circuit current decreased with increased temperature. The maximum output power and the conversion efficiency of the device decreased at higher temperatures. For ...

  9. a 9-BIT, Pipelined Gallium Arsenide Analog-Digital Converter

    Science.gov (United States)

    Breevoort, Cornelius Marius

    1992-01-01

    Excellent Short Take-Off and Landing (STOL) performance is achieved by Upper Surface Blowing (USB) aircraft as a result of mounting high by-pass turbofan engines over the forward part of the wing. High lift levels are generated by directing the engine exhaust over the wing upper surface to entrain additional airflow and by using the Coanda effect to turn the exhaust flow downward over a large radius "Coanda" flap. Commercial application of USB technology could reduce airport congestion and community noise if future configurations can be designed with economically acceptable cruise drag levels. An experimental investigation of the high speed aerodynamics of USB aircraft configurations has been conducted to accurately define the magnitude and causes of the powered configuration cruise drag. A highly instrumented wind tunnel model of a realistic USB configuration has been used which permitted parametric variations in the number and spanwise location of the nacelles and accurately modeled the engine power effects with turbofan propulsion simulators. The measured force data provides an accurate definition of the cruise drag penalty associated with each configuration and the constructed pressure contour plots provide detailed insight into their causes. It was found that the high speed aerodynamics of USB configurations is a complex interaction of jet induced and wing transonic flowfields. The presence of the nacelles on the wing upper surface created a severe drag penalty which increased with freestream Mach number, power setting and angle of attack. The more widely spaced two nacelle configurations exhibited improved flowfields at moderate Mach numbers but suffered from drag levels comparable to the baseline configuration for high speed cruise conditions. At high Mach numbers and power settings, all of the tested configurations displayed strong shocks and separated zones in the wing/nacelle junction regions. Detailed discussions of the causes of the cruise drag penalty and recommended future design improvements are presented.

  10. Nickel-gallium arsenide high-voltage power Schottky diodes

    Science.gov (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.

    1993-01-01

    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  11. Thermophotovoltaic converters on indium arsenide-based compounds

    Science.gov (United States)

    Gevorkyan, V. A.; Aroutiounian, V. M.; Gambaryan, K. M.; Arakelyan, A. O.; Andreev, I. A.; Golubev, L. V.; Yakovlev, Yu. P.

    2007-03-01

    Thermophotovoltaic converters based on multicomponent solid solutions of III V compounds, specifically, InAsSbP/InAs heterostructures ( E g = 0.35 0.60 eV), that are intended for fabricating IR emitters heated to 1000 2000°C are studied. The use of such narrow-gap heterostructures makes it possible to advance the sensitivity of the elements into the long-wave range and utilize the thermal energy of low-temperature sources more efficiently. Fresh physical approaches to fabricating epitaxial quaternary InAs-based InAsSbP solid solutions with a low carrier concentration and heterostructures with sharp interfaces are presented. Quaternary InAsSbP solid solutions and other related heterostructures offer a number of advantages, such as the possibility of growing perfect structures lattice-matched with the substrate, stress-free interfaces, good electrical and photoelectrical properties (low dark currents and a high external quantum efficiency), and the possibility of flexibly controlling the energy gap by varying the composition of the solid solution. It is shown that InAsSbP films grown on an InAs substrate by liquid-phase epitaxy from supercooled liquid solution and liquid-phase electro-epitaxy with replenishment of liquid solution by growing layer components are uniform in composition and have a perfect crystal structure. Thermophotovolatic p-InAsSbP/ n-InAs diode-type heterostructures obtained by the above methods are found to have saturation dark currents close to theoretically predicted values and a wide range of spectral sensitivity, which makes them candidates for thermophotovoltaic elements.

  12. Nanoscale characterisation of electronic and spintronic nitrides and arsenides

    International Nuclear Information System (INIS)

    The limits of applicability of the nanoscale spatial resolution analysis techniques of EFTEM, CBED and dark field imaging as applied to ohmic contacts to AlGaN/GaN and Mn distribution within Ga1-xMnxAs epilayers are considered. EFTEM can be limited by acquisition times necessitating the post processing of images to compensate for sample drift. Complementary technique of assessment are required to address problems of peak overlaps in energy loss spectra or signal to noise problems for low elemental concentrations. The use of 002 dark field imaging to appraise Ga1-xMnxAs epilayers is demonstrated

  13. Long wavelength gallium indium nitrogen arsenide and gallium-indium-nitrogen-arsenic-antimony lasers on gallium arsenide

    Science.gov (United States)

    Ha, Wonill

    The boom in fiber optic communications has created a high demand for much lower cost lasers in the 1.3--1.6 mum wavelength range for both low cost vertical-cavity surface-emitting lasers (VCSELs) and high-power Raman pumps. This has led to the introduction of dilute nitrogen into GaInAs to reduce the bandgap sufficiently, resulting in a new long wavelength material grown on GaAs. This new material will provide a new platform for low cost and high-speed directly-modulated lasers that are essential for the rapid expansion of optical wide area networks, metro area networks, and local area networks. The requirements for these lasers are a broad operating temperature range (-10 to 90°C) and moderate output power (˜10 mW) in the fundamental mode. There is also a growing interest in higher power lasers, at similar wavelengths, as pumps for Raman amplifiers to expand the available bandwidth and increase power budgets. Research has shown that GaInNAs can be coherently lattice matched to GaAs while providing the proper bandgap energy. These GaAs-based lasers with dilute N can take advantage of the well-developed GaAs processing techniques and superior distributed Bragg reflector mirror technology for VCSELs. This thesis presents new structures utilizing GaNAs barriers and a new quantum well material, GaInNAsSb, to achieve long-wavelength optical emission in post-annealed material. This increase is accompanied by a blue-shift in the bandgap energy. As a result, the distinct challenge of this material system is to achieve high quality material with sufficiently long wavelength emission. Introduction of nitrogen into the barriers reduces the blue-shift of luminescence by suppressing nitrogen out-diffusion from the quantum wells and decreasing carrier confinement in the quantum wells. We utilize antimony, both incorporated into the crystal and used as a surfactant, to enable higher indium incorporation. GaNAs or GaNAsSb barriers also reduce the overall strain of the active region because high indium mole fraction quantum wells, GaInNAs and GaInNAsSb, are compressively strained and the GaNAs barriers are tensely strained. The Molecular Beam Epitaxial growth and demonstration of high-efficiency long-wavelength multiple quantum well GaInNAs(Sb) ridge-waveguide laser diodes using GaNAs(Sb) barriers on GaAs substrate and longer wavelength photoluminescence are described in this work. The wide wavelength range coverage and high output power of GaInNAs and GaInNAsSb lasers grown on GaAs developed in this thesis make these great candidates for both transmitters and optical amplifiers for telecommunications.

  14. Photoinduced Dissociation Of N-alkyl Bromides On Gallium Arsenide(110) And Gallium Arsenide(100) Electron And Fragment Dynamics

    CERN Document Server

    Khan, K A

    1999-01-01

    In this study we investigate the UV-initiated electron transfer and dissociation fragment dynamics of selected n-alkyl bromides physisorbed on single crystals of GaAs. By systematically varying different chemical and structural parameters of the adsorbate/substrate system we explore a number of fundamental questions regarding the basic physics and chemistry of photochemical processes on surfaces. Monolayers of methyl, ethyl and propyl bromide were deposited on the (110), Ga-terminated (100) and As- terminated (100) surfaces of GaAs without thermal decomposition at 80 K. Substrate-mediated electron transfer to the molecule, induced by exposure to UV light at 193, 248 and 351 nm, causes C-Br bond cleavage. The electron transfer dynamics of this mechanism are examined as a function of wavelength and molecular complexity of the adsorbate to better understand the flow of energy and charge across the adsorbate/substrate interface. The photodynamics of the alkyl fragments are studied using mass-, energy- and angle-r...

  15. Chemical mechanical polishing of Indium phosphide, Gallium arsenide and Indium gallium arsenide films and related environment and safety aspects

    Science.gov (United States)

    Matovu, John Bogere

    As scaling continues with advanced technology nodes in the microelectronic industry to enhance device performance, the performance limits of the conventional substrate materials such as silicon as a channel material in the front-end-of-the-line of the complementary metal oxide semiconductor (CMOS) need to be surmounted. These challenges have invigorated research into new materials such as III-V materials consisting of InP, GaAs, InGaAs for n-channel CMOS and Ge for p-channels CMOS to enhance device performance. These III-V materials have higher electron mobility that is required for the n-channel while Ge has high hole mobility that is required for the p-channel. Integration of these materials in future devices requires chemical mechanical polishing (CMP) to achieve a smooth and planar surface to enable further processing. The CMP process of these materials has been associated with environment, health and safety (EH&S) issues due to the presence of P and As that can lead to the formation of toxic gaseous hydrides. The safe handling of As contaminated consumables and post-CMP slurry waste is essential. In this work, the chemical mechanical polishing of InP, GaAs and InGaAs films and the associated environment, health and safety (EH&S) issues are discussed. InP removal rates (RRs) and phosphine generation during the CMP of blanket InP films in hydrogen peroxide-based silica particle dispersions in the presence and absence of three different multifunctional chelating carboxylic acids, namely oxalic acid, tartaric acid, and citric acid are reported. The presence of these acids in the polishing slurry resulted in good InP removal rates (about 400 nm min-1) and very low phosphine generation (surfaces (0.1 nm RMS surface roughness). The optimized slurry compositions consisting of 3 wt % silica, 1 wt % hydrogen peroxide and 0.08 M oxalic acid or citric acid that provided the best results on blanket InP films were used to evaluate their planarization capability of patterned InP-STI structures of 200 mm diameter wafers. Cross sectional scanning electron microscope (SEM) images showed that InP in the shallow trench isolation structures was planarized and scratches, slurry particles and smearing of InP were absent. Additionally, wafers polished at pH 6 showed very low dishing values of about 12-15 nm, determined by cross sectional SEM. During the polishing of blanket GaAs, GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H2O2 alone and showed a strong pH dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H2O2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH3) during the dissolution of GaAs in aq. H2O2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH3 was measured during polishing, evidently because of the relatively high water solubility of AsH3. The work done on InGaAs polishing shows that InGaAs RR trends are different from those observed for InP or GaAs. InGaAs RRs at pH 2 are higher than those at pH 10 and highest at pH 4. Dissolution rates (DRs), Fourier Transform Infrared Spectroscopy (FTIR), contact angles, X-Ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence Spectroscopy (XRF), zeta potential measurements and calculated Gibbs free energy changes of the reactions involved during polishing and gas formation were used to discuss the observed RRs and hydride gas generation trends and to propose the reaction pathways involved in the material removal and in hydride gas generation mechanisms.

  16. 铟镓砷焦平面阵列在微光夜视应用中的潜力及前景%The Potential and Prospect of Indium Gallium Arsenide Focal Plane Array Applied to Low Light Level Night Vision

    Institute of Scientific and Technical Information of China (English)

    潘京生; 孙建宁; 金戈; 任玲; 毛汉祺; 顾燕; 郭一亮; 苏德坦

    2014-01-01

    得益于夜气辉在短波红外(SWIR)0.9~1.7μm波段的自然辐射数十倍强于夜天空在可见光和近红外(NIR)0.4~0.9μm波段的辐射,SWIR成像成为应用于微光条件下的成像探测的最佳选择,由晶格匹配In0.53Ga0.47As/InP制作InGaAs焦平面阵列(Focal Plane Array,FPA),灵敏于0.9~1.7μm波段,在整个响应波段具有超过70%的量子效率,和室温非制冷工作的极低的暗电流。通过减薄基底,还可将InGaAs FPA的短波限延伸至可见光波段的0.4μm。最近几年,超低暗电流、低读出噪声、大面阵和小像素尺寸的InGaAs FPA的开发取得了实质性的进展,特别是暗电流得到了数量级的降低,InGaAs FPA探测器已经显露出应用于微光夜视的极大潜力,并且还通过采用更复杂的温度相关的非均匀校正算法实现了无TEC的低功耗工作,基于超低噪声的密集阵列InGaAs FPA的SWIR成像技术有望成为新一代夜视技术的一个重要组成部份。%The shortwave infrared(SWIR)spectral irradiance in the 0.9μm to 1.7μm band which caused by night airglow is several ten times stronger than the irradiance in the visible and near infrared realm of 0.4μm to 0.9μm of the night sky, so SWIR imaging is the best choice for the imaging detection under low light level condition. The Indium Gallium Arsenide(InGaAs)focal plane array(FPA)sensors based on lattice matched In0.53Ga0.47As/InP is sensitive to SWIR light whose wavelength is from 0.9μm to 1.7μm, matching the spectral irradiance caused by night airglow, and have exceeded quantum efficiency of 70%over whole response spectral range, as well as with very low dark current while working at room temperature. Removing the InP substrate from the FPA allows extending cutoff wavelength to visible region of 0.4μm. The work on InGaAs FPA with ultra low dark current, low readout noise, large format and small pixel size has been progressing substantially in

  17. Efeito da terapia com laser de arsenieto de gálio e alumínio (660Nm sobre a recuperação do nervo ciático de ratos após lesão por neurotmese seguida de anastomose epineural: análise funcional Effect of gallium-aluminum-arsenide laser therapy (660Nm on recovery of the sciatic nerve in rats following neurotmesis lesion and epineural anastomosis: functional analysis

    Directory of Open Access Journals (Sweden)

    FA Reis

    2008-06-01

    Full Text Available CONTEXTUALIZAÇÃO: As lesões nervosas periféricas podem comprometer atividades diárias de um indivíduo e resultam em perda da sensibilidade e motricidade do território inervado. OBJETIVO: Com o intuito de acelerar os processos regenerativos, objetivou-se analisar a influência da aplicação do laser de arsenieto de gálio e alumínio (AsGaAl, 660Nm sobre a recuperação funcional do nervo ciático de ratos. MATERIAIS E MÉTODOS: O nervo ciático de 12 ratos Wistar foi submetido à lesão por neurotmese e anastomose epineural e divididos em dois grupos: controle e laserterapia. Após a lesão, utilizou-se o laser de GaAlAs, 660Nm, 4J/cm², 26,3mW, feixe de 0,63cm², em três pontos eqüidistantes sobre a lesão, por 20 dias. As impressões das pegadas dos animais foram obtidas antes e após (sete, 14 e 21 dias pós-operatórios o procedimento cirúrgico e calculou-se o índice funcional do ciático (IFC. RESULTADOS: A comparação do IFC não resultou em diferença significante (p>0,05 entre os grupos. CONCLUSÕES: Conclui-se que os parâmetros e métodos empregados na laserterapia demonstram resultados nulos sobre o IFC no período avaliado.CONTEXT: Peripheral nerve injuries result in sensory and motor losses in the innervated area and can hinder individuals’ daily activities. Objective: The objective was to analyze the influence of applying gallium-aluminum-arsenide (GaAlAs laser (660Nm on the functional recovery of the sciatic nerve in rats. METHODS: The sciatic nerve of 12 Wistar rats was subjected to injury consisting of neurotmesis and epineural anastomosis. The rats were divided into two groups: control and laser therapy. After the injury, a GaAlAs laser was used (660Nm, 4J/cm², 26.3mW and 0.63cm² beam at three equidistant points on the injury, for 20 days. Footprint impressions were obtained from the animals before and seven, 14 and 21 days after the surgical procedure and the sciatic functional index (SFI was calculated

  18. Use of trioctylphosphine oxide for transplutonium element extraction and purification

    International Nuclear Information System (INIS)

    Investigated was extraction of tri-valent curium, berkelium, californium, einsteinium as well as cerium and europium with trioctylphosphin oxide from lactic acid solutions, containing DTPA and aluminium nitrate depending on the aluminium nitrate and TOPO concentrations and nitric acid solutions of variable concentration as well. Under optimum conditions of extraction chromatography of berkelium studied was the distribution of cobalt, nickel, chromium, iron, aluminium, titanium, zirconium and niobium ions, and the coefficients of berkelium purification from cations investigated were determined. The effect of weight quantities of cation impurities on extraction chromatographic yield of berkelium has been investigated. Examples of practice application of the extraction chromatography with the use of TOPO are given

  19. In situ TEM observations of heavy ion damage in gallium arsenide

    International Nuclear Information System (INIS)

    Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion Accelerator Facility at Argonne National Laboratory. The ion bombardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures ranging from 30 to 3000K. Ion fluences ranged from 2 x 1011 to 5 x 1013 ions cm-2. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 300K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 2500K. Post-implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears. 14 refs., 3 figs., 1 tab

  20. Density functional study of optical properties of beryllium chalcogenides compounds in nickel arsenide B8 structure

    International Nuclear Information System (INIS)

    The structural, electronic and optical properties of beryllium chalcogenides BeS, BeSe and BeTe using the full-potential linear augmented plane wave (FP-LAPW) method are investigated. The exchange-correlation energy within the local density approximation (LDA) and the generalized gradient approximation (GGA) are described. The Engel-Vosko (EVGGA) formalism is applied for electronic and optical properties. The structural parameters of our model and the transition pressure from zinc-blende (B3) to the NiAs (B8) phase are confirmed. It is found that these compounds have indirect band gaps except for BeTe in NiAs (B8) phase. The results of reflectivity, refractive index and optical dielectric functions of Be compounds are investigated. An agreement is found between our results and those of other theoretical calculations and the experimental data.

  1. Design and implementation of high sensitive CCD on gallium arsenide based miniaturized spectrometer

    Science.gov (United States)

    Zheng, Jiamin; Shen, Jianhua; Guo, Fangmin

    2013-08-01

    In this paper, a method on how to design and implement a miniaturized spectrometer with low-light-level (LLL) CCD on GaAs is introduced. The optical system uses a blazed grating as the dispersive element and a 1×64 CCD on GaAs as the sensor. We apply a highly integrated Cortex-M4 MCU (STM32F407), to build the data acquisition and analysis unit, providing Wi-Fi interface to communicate with the PC software. It can complete the tasks like data acquisition, digital filtering, spectral display, network communication, human-computer interaction etc.

  2. Trapping of positron in gallium arsenide: evidencing of vacancies and of ions with a negative charge

    International Nuclear Information System (INIS)

    Vacancy type defects in Ga As as grown and irradiated by electrons are characterized by lifetime of positrons. Positron lifetime increases from 230 ps to 258 and 295 ps in presence of native vacancies in n type Ga As. Configuration of native vacancies changes when Fermi level crosses energy levels localized in the forbidden zone at 0.035eV and at 0.10eV from the bottom of the conduction band. Native vacancies are identified to arsenic vacancies with or without other point defects. Positron lifetime increases from 230 to 260 ps in presence of vacancies produced by low temperature irradiation negative ions are also produced. In irradiated Ga As, these ions trap positrons in competition with vacancies produced by irradiation, showing they have a negative charge. Two annealing zones between 180-300K and 300-600K are presented by vacancies. Ions do not anneal below ambient temperature. Vacancies and negative ions are identified respectively to gallium vacancies and gallium antisite

  3. Formation of defects at high temperature plastic deformation of gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mikhnovich, V.V.

    2006-03-14

    The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

  4. Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers

    International Nuclear Information System (INIS)

    Substitutional carbon on an arsenic lattice site is the shallowest and one of the most dominant acceptors in semi-insulating Liquid Encapsulated Czochralski (LEC) GaAs. However, the role of this acceptor in determining the well known ''W'' shape spatial variation of neutral EL2 concentration along the diameter of a LEC wafer is not known. In this thesis, we attempt to clarify the issue of the carbon acceptor's effect on this ''W'' shaped variation by measuring spatial profiles of this acceptor along the radius of three different as-grown LEC GaAs wafers. With localized vibrational mode absorption spectroscopy, we find that the profile of the carbon acceptor is relatively constant along the radius of each wafer. Average values of concentration are 8 x 10E15 cm-3, 1.1 x 10E15 cm-3, and 2.2 x 10E15 cm-3, respectively. In addition, these carbon acceptor LVM measurements indicate that a residual donor with concentration comparable to carbon exists in these wafers and it is a good candidate for the observed neutral EL2 concentration variation. 22 refs., 39 figs

  5. Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses

    International Nuclear Information System (INIS)

    The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to calculate the output current of the detector as a function of its active-region's thickness and the voltage applied across the sensor under conditions of the presence of recombination processes.

  6. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  7. Low-noise gallium-arsenide field-effect transistor preamplifiers for stochastic beam cooling systems

    International Nuclear Information System (INIS)

    The present noise performance, bandwidth capability and gain stability of bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser are summarized and compared in the 100 MHz to 40 GHz frequency range for stochastic beam cooling systems. Stability factor of GaAs FET's as a function of ambient temperature is presented and discussed. Performance data of several low-noise wide-band cryogenically cooled preamplifiers are presented including one with a noise figure of 0.35 dB over a bandwidth range of 150500 MHz operating at ambient temperature of 200K. Also, data are given on a broadband 1-2 GHz preamplifier having a noise figure of approximately 0.2 dB. The gain, operating noise temperature, stability, gain nonuniformity and phase-shift as function of frequency of interest for beam cooling systems are discussed

  8. Size-effects in indium gallium arsenide nanowire field-effect transistors

    Science.gov (United States)

    Zota, Cezar B.; Lind, E.

    2016-08-01

    We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.

  9. Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

    International Nuclear Information System (INIS)

    We report the first systematic measurement of the electroreflectance spectra of In/sub u/Ga/sub 1-u/P/sub v/As/sub 1-v/ over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds

  10. Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

    CERN Document Server

    Midolo, Leonardo; Kiršanskė, Gabija; Stobbe, Søren

    2015-01-01

    We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively-coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabrication time and costs, while at the same time yielding devices of excellent structural quality. We discuss in detail the procedures for cleaning the resist residues caused by the plasma etching and present a statistical analysis of the etched feature size after each fabrication step.

  11. Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

    Science.gov (United States)

    Midolo, L.; Pregnolato, T.; Kiršanskė, G.; Stobbe, S.

    2015-12-01

    We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabrication time and costs, while at the same time yielding devices of excellent structural quality. We discuss in detail the procedures for cleaning the resist residues caused by the plasma etching and present a statistical analysis of the etched feature size after each fabrication step.

  12. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show that the evolution of electrical resistivity in the coexistence regime of alpha- and beta-phase can be understood in terms of a simple model. These measurements allow accurate extraction of the order-parameter "phase fraction" and thus permit us to study the hysteresis of the phase transition in detail. Major features in the hysteresis can be correlated to the ordering observed in the array of alpha- and beta-stripes. As the continuous ferromagnetic film breaks up into isolated stripes of alpha-phase, a hysteresis in the out-of-plane magnetization is detected from measurements of the anomalous Hall effect. The appearance of out-of-plane domains can be understood from simple shape-anisotropy arguments. Remarkably, an anomaly of the Hall effect at low fields persists far into the beta-phase. Signatures of the more elusive beta- to gamma-transition are found in the temperature-dependence of resistivity, the out-of-plane lattice constant, and reflectance difference spectra. The transition temperature is significantly lowered compared to the bulk, consistent with the strained state of the material. The negative temperature coefficient of resistivity, as well as its anisotropic changes, lend support to the idea of an antiferromagnetic order within the beta-phase.

  13. Lattice constant variation and complex formation in zincblende gallium manganese arsenide

    Science.gov (United States)

    Schott, G. M.; Faschinger, W.; Molenkamp, L. W.

    2001-09-01

    We perform high resolution x-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low-temperature molecular-beam epitaxy under different growth conditions. Although all samples are of high crystalline quality and show narrow rocking curve widths and pronounced finite thickness fringes, the lattice constant variation with increasing manganese concentration depends strongly on the growth conditions: For samples grown at substrate temperatures of 220 and 270 °C, the extrapolated relaxed lattice constant of Zincblende MnAs is 0.590 nm and 0.598 nm, respectively. This is in contrast to low-temperature GaAs, for which the lattice constant decreases with increasing substrate temperature.

  14. Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide

    OpenAIRE

    Schott, G. M.; Faschinger, W.; Molenkamp, L.W.

    2001-01-01

    We perform high resolution X-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low temperature molecular beam epitaxy under different growth conditions. Although all samples are of high crystalline quality and show narrow rocking curve widths and pronounced finite thickness fringes, the lattice constant variation with increasing manganese concentration depends strongly on the growth conditions: For samples grown at substrate te...

  15. Ferromagnetism in indium manganese arsenide magnetic semiconductor thin films deposited by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Blattner, Aaron J.

    The structure-property relationships of (In,Mn)As magnetic semiconductor thin films have been investigated to elucidate the mechanism of ferromagnetism and to assess its viability for use in spintronic device applications. Single phase, epitaxial (In,Mn)As films were deposited for the first time using atmospheric pressure metalorganic vapor phase epitaxy. The microstructure and phase composition of these films were determined using X-ray diffraction, transmission electron microscopy, and extended x-ray absorption fine structure measurements. Magnetic properties of the films were examined using superconducting quantum interference device magnetometery. Room temperature ferromagnetism was observed in single-phase In1-xMn xAs films with x ≤ 0.10. Magnetization measurements indicated that these (In,Mn)As samples had a transition temperature of 298--333 K. The Curie temperature was effectively independent of Mn concentration over the range of 1--10%. The temperature dependent magnetization along with the magnitude of the saturation magnetization and microstructural analysis indicated that the source of the high-temperature ferromagnetism in single-phase films is not attributable to MnAs nanoprecipitates. The Curie temperatures for these films are nearly constant for hole concentrations of 8 x 1017--1.6 x 1018 cm -3. In addition, the hole concentration is at least two orders of magnitude smaller than what is required under the conventional hole-mediated theory of ferromagnetism to obtain room-temperature ferromagnetism. Consequently, this model in its current form is not sufficient to describe the ferromagnetism in (In,Mn)As deposited using MOVPE. A model based upon interacting atomic scale ferromagnetic clusters was developed. The ferromagnetic coupling between these clusters may be a hole-mediated mechanism. This model of interacting ferromagnetic clusters was very successful in describing both the temperature and field dependence of the magnetization. In addition, this model is able to explain the high Curie temperatures and the Mn concentration independence of the Curie temperature in these (In,Mn)As films. This work has shown that the MOVPE deposited (In,Mn)As films are significantly different than those obtained by molecular beam epitaxy. The higher deposition temperature has been shown to significantly improve Mn solubility and allow for the formation of atomic scale clusters as predicted by recent theoretical calculations. These clusters stabilize the ferromagnetism to much higher temperatures than was previously observed in (In,Mn)As with random Mn substitution.

  16. Manipulating the magnetic anisotropy in the ferromagnetic semiconductor Gallium Manganese Arsenide

    OpenAIRE

    Casiraghi, Arianna

    2012-01-01

    Since its first successful growth in 1996, the ferromagnetic semiconductor (Ga,Mn)- As has had a great inuence on the research field of semiconductor spintronics. Among the outstanding characteristics of this material the large spin-orbit interaction for the holes in the valence band plays a major role, since it is responsible for some of the most interesting properties of (Ga,Mn)As, like the magnetocrystalline anisotropy, the magnetoelastic coupling and the extraordinary contributions to ...

  17. The electronic and structural properties of the silicon-gallium arsenide(110) interface

    Science.gov (United States)

    Dunstan, P. R.; Wilks, S. P.; Burgess, S. R.; Pan, M.; Williams, R. H.; Cammack, D. S.; Clark, S. A.

    1998-01-01

    The passivation properties of the Sisbnd GaAs(110) interface have been studied using scanning tunnelling microscopy/spectroscopy (STM/STS) and soft X-ray photoemission spectroscopy (SXPS). Silicon has been deposited at room temperature and STM images show the sub-monolayer growth of silicon islands on the GaAs substrate. The electrical properties of these islands together with the clean surface have been investigated using scanning tunnelling spectroscopy (STS). The spectroscopy clearly illustrates the difference in electrical properties between atomically flat regions of GaAs as compared to those containing defects or steps, i.e. where surface band bending occurs. We have investigated the use of sub-monolayer Si coverages to modify the electronic structure of the surface. Height variations of 3-4Åacross Si islands and 2Åacross steps on the GaAs surface have also been observed using the STM. STS spectra, collected simultaneously with the STM image, showed the Si to have semiconducting properties differing from that of crystalline Si and the GaAs substrate. Comparisons between the STM and STS results together with SXPS have provided a correlation between the structural, electrical and chemical nature of the Si/GaAs(110) interface.

  18. Double-Q spin-density wave in iron arsenide superconductors

    Science.gov (United States)

    Allred, J. M.; Taddei, K. M.; Bugaris, D. E.; Krogstad, M. J.; Lapidus, S. H.; Chung, D. Y.; Claus, H.; Kanatzidis, M. G.; Brown, D. E.; Kang, J.; Fernandes, R. M.; Eremin, I.; Rosenkranz, S.; Chmaissem, O.; Osborn, R.

    2016-05-01

    Elucidating the nature of the magnetic ground state of iron-based superconductors is of paramount importance in unveiling the mechanism behind their high-temperature superconductivity. Until recently, it was thought that superconductivity emerges only from an orthorhombic antiferromagnetic stripe phase, which can in principle be described in terms of either localized or itinerant spins. However, we recently reported that tetragonal symmetry is restored inside the magnetically ordered state of certain hole-doped compounds, revealing the existence of a new magnetic phase at compositions close to the onset of superconductivity. Here, we present Mössbauer data that show that half of the iron sites in this tetragonal phase are non-magnetic, establishing conclusively the existence of a novel magnetic ground state with a non-uniform magnetization that is inconsistent with localized spins. Instead, this state is naturally explained as the interference between two commensurate spin-density waves, a rare example of collinear double-Q magnetic order. Our results demonstrate the itinerant character of the magnetism of the iron pnictides, and the primary role played by magnetic degrees of freedom in determining their phase diagram.

  19. Online neutron fluence measurement at University Hospital Essen neutron therapy facility using gallium arsenide LEDs

    International Nuclear Information System (INIS)

    The detector and sensor group of the West German Proton Therapy Centre (WPE) has developed a novel real-time neutron fluence monitor based on tiny, inexpensive, commercially available GaAs-LEDs. The linear detection range for d(14)+Be neutrons was evaluated to be 5.0 × 108–2.0 × 1011 neutron.cm−2. However, this monitor can be used universally for neutrons of any energy distribution. Using scaling factors, fluence calibration curves for 1 MeV and 14 MeV D+T fusion neutrons have been calculated. The sensitivity of the detector increases with increasing neutron energy. This makes it suitable for the detection of high-energy neutrons, providing an extra advantage for use at a proton therapy facility where there is a high proportion of high-energy neutrons. The detector is practically not sensitive to photons. A prototype of the online GaAs-LED based neutron fluence monitor has been tested successfully at University Hospital Essen neutron therapy facility and will be implemented at WPE in the near future.

  20. The selective trapping of arsenic interstitial atoms by impurities in gallium arsenide

    International Nuclear Information System (INIS)

    Carbon doped GaAs is irradiated either with (a) fast neutrons (1 MeV) or (b) electrons (2 MeV). Complexes previously labelled C(1) are produced and the fine structure of the two LVM (infrared active localized vibrational mode) lines is discussed. A comparison is made with the BGa-Asi (boron impurity-interstitial arsenic) complex and it is concluded that the C(1) centre is a CAs-Asi (carbon acceptor-interstitial arsenic) defect. The defect dissociates at about 150 0C. (author)

  1. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan;

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  2. Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits

    Science.gov (United States)

    Tournet, J.; Gosselink, D.; Miao, G.-X.; Jaikissoon, M.; Langenberg, D.; McConkey, T. G.; Mariantoni, M.; Wasilewski, Z. R.

    2016-06-01

    The quest for a universal quantum computer has renewed interest in the growth of superconducting materials on semiconductor substrates. High-quality superconducting thin films will make it possible to improve the coherence time of superconducting quantum bits (qubits), i.e., to extend the time a qubit can store the amplitude and phase of a quantum state. The electrical losses in superconducting qubits highly depend on the quality of the metal layers the qubits are made from. Here, we report on the epitaxy of single-crystal Al (011) layers on GaAs (001) substrates. Layers with 110 nm thickness were deposited by means of molecular beam epitaxy at low temperature and monitored by in situ reflection high-energy electron diffraction performed simultaneously at four azimuths. The single-crystal nature of the layers was confirmed by ex situ high-resolution x-ray diffraction. Differential interference contrast and atomic force microscopy analysis of the sample’s surface revealed a featureless surface with root mean square roughness of 0.55 nm. A detailed in situ study allowed us to gain insight into the nucleation mechanisms of Al layers on GaAs, highlighting the importance of GaAs surface reconstruction in determining the final Al layer crystallographic orientation and quality. A highly uniform and stable GaAs (001)-(2× 4) reconstruction reproducibly led to a pure Al (011) phase, while an arsenic-rich GaAs (001)-(4× 4) reconstruction yielded polycrystalline films with an Al (111) dominant orientation. The near-atomic smoothness and single-crystal character of Al films on GaAs, in combination with the ability to trench GaAs substrates, could set a new standard for the fabrication of superconducting qubits.

  3. Simple inverted band structure model for cadmium arsenide (Cd3As2)

    International Nuclear Information System (INIS)

    The development of a simple Hamiltonian yielding the inverted band structure of Cd3As2 in the 4 mm (C4v12) low-temperature phase is proposed. The presented theory takes into account the spin orbit interaction and tetragonal distortion of lattice in the low symmetry. The authors obtain k-linear terms in the band structure and therefore a splitting in k-space of spin degenerate energy bands. The reported band model contains only one new crystal field parameter d = cr|Z> in addition to well known Kildal's set. The first evaluation of this shows that (0.028 < d < 0.072) eV using optical absorption edge data. The finite width of the anisotropic heavy and light hole bands is pointed out. (authors)

  4. Close-spaced vapor transport and photoelectrochemistry of gallium arsenide for photovoltaic applications

    Science.gov (United States)

    Ritenour, Andrew J.

    The high balance-of-system costs of photovoltaic installations indicate that reductions in absorber cost alone are likely insufficient for photovoltaic electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which both yield high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III--V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the limited scalability of traditional syntheses, which rely on expensive reactors and employ toxic and pyrophoric gas-phase precursors such as arsine and trimethyl gallium. This work describes GaAs films made by close-spaced vapor transport, a potentially scalable technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient to deposit crystalline films with similar electronic properties to GaAs prepared using traditional syntheses. Although close-spaced vapor transport of GaAs was first developed in 1963, there were few examples of GaAs photovoltaic devices made using this method in the literature at the onset of this project. Furthermore, it was unclear whether close-spaced vapor transport could produce GaAs films appropriate for use in photovoltaics. The goal of this project was to create and study GaAs devices made using close-spaced vapor transport and determine whether the technique could be used for production of grid-connected GaAs photovoltaics. In Chapter I the design of the vapor transport reactor, the chemistry of crystal growth, and optoelectronic characterization techniques are discussed. Chapter II focuses on compositional measurements, doping, and improved electronic quality in CSVT GaAs. Chapter III describes several aspects of the interplay between structure and electronic properties of photoelectrochemical devices. Chapter IV addresses heteroepitaxial growth of GaAs on "virtual" Ge-on-Si substrates. This is a topic of importance for the broader III--V community as well as the photovoltaic community, as Si is the substrate of choice in many areas of industry. This dissertation includes unpublished and previously published co-authored material.

  5. Electrical and photoelectrical properties of p-gallium arsenide-n-zinc selenide heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Gaugash, P.V.; Kas' yan, V.A.; Korol' kov, V.I.; Rakhimov, N.K.

    1975-01-01

    Two types of p-GaAs-n-ZnSe heterojunctions were obtained by the method of liquid-phase epitaxy of GaAs from Sn solutions. One type had a thin high-resistance layer located near the interface in ZnSe, and the other type did not. The current--voltage and capacitance--voltage characteristics were studied at 77 to 430/sup 0/K. (WDM)

  6. Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

    International Nuclear Information System (INIS)

    In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. We have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, we have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling. 4 refs., 4 figs., 2 tabs

  7. Dual-band technology on indium gallium arsenide focal plane arrays

    Science.gov (United States)

    Dixon, Peter; Hess, Cory D.; Li, Chuan; Ettenberg, Martin; Trezza, John

    2011-06-01

    While InGaAs-based SWIR imaging technology has been improved dramatically over the past 10 years, the motivation remains to reduce Size Weight and Power (SWaP) for applications in Intelligence Surveillance and Reconnaissance (ISR). Goodrich ISR Systems, Princeton (Sensors Unlimited, Inc.) has continued to improve detector sensitivity. Additionally, SUI is working jointly with DRS-RSTA to develop innovative techniques for manufacturing dual-band focal planes to provide next generation technology for not only reducing SWaP for SWIR imagers, but also to combine imaging solutions for providing a single imager for Visible Near-SWIR (VNS) + LW imaging solutions. Such developments are targeted at reducing system SWaP, cost and complexity for imaging payloads on board UASs as well as soldier deployed systems like weapon sights. Our motivation is to demonstrate capability in providing superior image quality in fused LWIR and SWIR imaging systems, while reducing the total system SWaP and cost by enabling Short Wave and Thermal imaging in a single uncooled imager. Under DARPA MTO awarded programs, a LW bolometer (DRS-RSTA) is fabricated on a Short Wave (SW) InGaAs Vis-SWIR (SUI-Goodrich) Imager. The combined imager is a dual-band Sensor-Chip Assembly which is capable of imaging in VIS-SWIR + LW. Both DRS and Goodrich have developed materials and process enhancements to support these dual-band platform investigations. The two imagers are confocal and coaxial with respect to the incident image plane. Initial work has completed a single Read Out Integrated Circuit (ROIC) capable of running both imagers. The team has hybridized InGaAs Focal planes to 6" full ROIC wafers to support bolometer fabrication onto the SW array.

  8. Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

    Science.gov (United States)

    Ban, Vladimir S.; Olsen, Gregory H.

    1990-01-01

    In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

  9. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  10. Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by first-principles calculations

    International Nuclear Information System (INIS)

    We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes. (paper)

  11. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

    Science.gov (United States)

    Salas, R.; Guchhait, S.; McNicholas, K. M.; Sifferman, S. D.; Dasika, V. D.; Jung, D.; Krivoy, E. M.; Lee, M. L.; Bank, S. R.

    2016-05-01

    We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical properties of fast metal-semiconductor superlattice photoconductors. Specifically, application of a bismuth flux during growth was found to significantly improve the properties of superlattices of LuAs nanoparticles embedded in In0.53Ga0.47As. These improvements are attributed to the enhanced structural quality of the overgrown InGaAs over the LuAs nanoparticles. The use of bismuth enabled a 30% increase in the number of monolayers of LuAs that could be deposited before the InGaAs overgrowth degraded. Dark resistivity increased by up to ˜15× while carrier mobility remained over 2300 cm2/V-s and carrier lifetimes were reduced by >2× at comparable levels of LuAs deposition. These findings demonstrate that surfactant-mediated epitaxy is a promising approach to enhance the properties of ultrafast photoconductors for terahert generation.

  12. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  13. Low-noise gallium-arsenide field-effect transistor preamplifiers for stochastic beam-cooling systems

    International Nuclear Information System (INIS)

    The present noise performance, bandwidth capability and gain stability of bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser are summarized and compared in the 100 MHz to 40 GHz frequency range for stochastic beam cooling systems. Stability factor of GaAs FET's as a function of ambient temperature is presented and discussed. Performance data of several low-noise wide-band cryogenically cooled preamplifiers are presented including one with a noise figure of 0.35 dB over a bandwidth range of 150 to 500 MHz operating at ambient temperature of 200K. Also, data are given on a broadband 1 to 2 GHz preamplifier having a noise figure of approximately 0.2 dB. The gain, operating noise temperature, stability, gain nonuniformity and phase-shift as function of frequency of interest for beam cooling systems are discussed

  14. Deterministic control of the quantum properties of single indium arsenide artificial atoms with indium phosphide nanoscale architectures

    Science.gov (United States)

    Kim, Danny

    This thesis presents optical spectra of single InAs quantum dots on InP with an unprecedented signal-to-noise ratio and spectral resolution that has facilitated comprehensive characterization and made a significant contribution to their understanding. InAs quantum dots on InP are the leading contenders for a variety of quantum electrooptic devices that require wavelengths in the 1.5 mum range, most notably triggered single/entangled photon sources for quantum key distribution. As of yet, spectroscopic data for InAs on InP has only provided proof of emission, but no high quality data has been available, preventing any conclusive understanding of their properties. The work presented in this thesis dramatically improves upon previous reports by key optimizations at each experimental stage: growth, processing, and optical setup. The spectra clearly resolve, for the first time, the structure within the s-shell and p-shell, with fine resolution, allowing quantitative evaluation of exciton complexes such as trions, biexcitons, and triplet states. By measuring numerous dots, the behavioral trends of these species with respect to dot geometry is deduced. Also, for the first time, magnetic-field dependent spectra are obtained for individual InAs/InP dots. A remarkable discovery was the strong relation of the exciton g-factor to dot height. This thesis also demonstrates deterministic nanometer-scale control of the quantum dot dimensions---with the goal being to exploit the structure/quantum property relation in these dots. This was accomplished by using the apex of an in-situ grown nanoscale InP pyramid as a nucleation site. The dimension of this top (001) surface on which the dot nucleates is responsive to manometer-scale changes in the pyramid base dimensions, which can be precisely controlled with lithography. The InAs grown on top of these mesas then conform to the size, where the available area can be purposely relaxed or constrained. For similar height, the resulting dots have diameters larger or smaller as compared to dots formed on planar substrates, ultimately allowing control of the aspect ratio. Control of lateral dot dimensions is corroborated by SEM images and also by magneto-optical spectra, thereby demonstrating deterministic control of the quantum properties.

  15. Devices using ballistic transport of two dimensional electron gas in delta doped gallium arsenide high electron mobility transistor structures

    Science.gov (United States)

    Kang, Sungmu

    In this thesis, devices using the ballistic transport of two dimensional electron gas (2DEG) in GaAs High Electron Mobility Transistor(HEMT) structure is fabricated and their dc and ac properties are characterized. This study gives insight on operation and applications of modern submicron devices with ever reduced gate length comparable to electron mean free path. The ballistic transport is achieved using both temporal and spatial limits in this thesis. In temporal limit, when frequency is higher than the scattering frequency (1/(2pitau)), ballistic transport can be achieved. At room temperature, generally the scattering frequency is around 500 GHz but at cryogenic temperature (≤4K) with high mobility GaAs HEMT structure, the frequency is much lower than 2 GHz. On this temporal ballistic transport regime, effect of contact impedance and different dc mobility on device operation is characterized with the ungated 2DEG of HEMT structure. In this ballistic regime, impedance and responsivity of plasma wave detector are investigated using the gated 2DEG of HEMT at different ac boundary conditions. Plasma wave is generated at asymmetric ac boundary conditions of HEMTs, where source is short to ground and drain is open while rf power is applied to gate. The wave velocity can be tuned by gate bias voltage and induced drain to source voltage(Vds ) shows the resonant peak at odd number of fundamental frequency. Quantitative power coupling to plasma wave detector leads to experimental characterization of resonant response of plasma wave detector as a function of frequency. Because plasma wave resonance is not limited by transit time, the physics learned in this study can be directly converted to room temperature terahertz detection by simply reducing gate length(Lgate) to submicron for the terahertz application such as non destructive test, bio medical analysis, homeland security, defense and space. In same HEMT structure, the dc and rf characterization on device is also carried out in order to compare the conventional HEMT and plasma wave detector. Additionally in spatial limit, the ballistic transport is achieved when gate length is shorter than mean free path of electron. Using depletion gates in GaAs/AlGaAs structure, we make quasi one dimensional channel (quantum point contact) at cryogenic temperature and investigate dc and ac(rf frequency) of 2DEG in spatial ballistic transport.

  16. Investigation of Epitaxial Lift-Off Gallium Arsenide and Langmuir-Blodgett Films for Optoelectronic Device Applications

    Science.gov (United States)

    Shah, Divyang Manharlal

    Epitaxial lift-off (ELO), a technique of removing an epitaxially grown GaAs layer from its growth substrate by selective etching of an AlAs sacrificial layer, is described for field-effect transistor fabrication independent of the GaAs growth substrate. Metal Semiconductor Field-Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) fabricated on silicon and sapphire substrates using ELO are investigated. A 0.1 μm gate length depletion mode MESFET made on silicon exhibited a unity current gain frequency f_{ rm t} = 34 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. A high input impedance amplifier has been implemented on silicon substrate using ELO GaAs MESFETs. The amplifier had an input RC time constant limited bandwidth of 500 MHz. Results of investigation of a novel source of cadmium and zinc diffusion for shallow p^ {+}-n junction fabrication in In _{0.53}Ga_{0.47 }As/InP are also presented. Langmuir-Blodgett (LB) deposited monolayers of Cadmium and Zinc arachidate have been used as a source of Cd and Zn dopants in InGaAs/InP. This new source provides precise control of the dopant dose through the number of LB film monolayers deposited and it is also a safer method of handling toxic Cd. The LB film can be patterned by lift-off for a patterned diffusion without a mask. Highly doped (N_{ rm a}= 2-4 times 10^{19} cm^ {-3}), shallow (0.1-0.4 mu m) p^{+}-n junctions have been obtained. Junction field-effect transistors (JFETs) and PIN photodetectors have been fabricated as a demonstration of the usefulness of the technique. A PIN photodetector had a 100 pA dark current at -5 V DC bias and a bandwidth of 2 GHz. A new technique for fabricating optoelectronic integrated circuit (OEIC) photoreceivers for 1.3-1.55 μm wavelength optical communication has also been proposed. The proposed OEIC uses ELO GaAs MESFETs and InGaAs/InP PIN photodetectors.

  17. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    International Nuclear Information System (INIS)

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm2 on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm2 on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs

  18. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

    Energy Technology Data Exchange (ETDEWEB)

    Pavlov, D. A. [Nizhni Novgorod Lobachevsky State University (Russian Federation); Bidus, N. V. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Bobrov, A. I., E-mail: bobrov@phys.unn.ru [Nizhni Novgorod Lobachevsky State University (Russian Federation); Vikhrova, O. V. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Volkova, E. I. [Nizhni Novgorod Lobachevsky State University (Russian Federation); Zvonkov, B. N. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Malekhonova, N. V.; Sorokin, D. S. [Nizhni Novgorod Lobachevsky State University (Russian Federation)

    2015-01-15

    The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs{sub x}P{sub 1−x} layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.

  19. Superconductivity and upper fields in Na-doped iron arsenides Eu1-xNaxFe2As2

    International Nuclear Information System (INIS)

    In this paper, we report a systematic investigation of the crystal structure and superconducting properties of iron-based superconductors Eu1-xNaxFe2As2 (x = 0-0.5). X-ray diffraction patterns indicate that the compounds form the ThCr2Si2-type structure with space group I4/mmm. The systematic evolution of the lattice constant demonstrates that the Eu ions are successfully replaced by Na. The use of alkali metal substitution into the Eu site allows us to suppress the magnetic/structural phase transition in the parent compounds and superconductivity reaches as high as 35 K with a doping level of x = 0.5. In addition, single crystals of Eu1-xNaxFe2As2 (x = 0, 0.5) have been successfully synthesized using the self-flux method. The upper critical fields have been determined with the magnetic field along the ab-plane and the c-axis, yielding an anisotropy of 1.7. The high upper critical fields and the low superconducting anisotropy of the Na-doped EuFe2As2 compounds indicate a potential for applications such as the generation of high magnetic fields. (paper)

  20. Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands , L and X of gallium arsenide

    Indian Academy of Sciences (India)

    Sonal Singhal; A K Saxena; S Dasgupta

    2007-10-01

    The electron drift mobility in conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in , L and X valleys are found to be nearly 9094, 945 and 247 cm2 /V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m 0 ), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in minimum increases to 1.54 × 106 from 1.59 × 105 cm2 /V-s (for impurity concentration of 1014 cm-3) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 105 and 1.44 × 105 cm2 /V-s at 10 K, which are about ∼ 4.5 and ∼ 3.9 times higher than normal value with impurity scattering present.

  1. Characterization of YBaCuO and ErBaCuO thin films deposited on silicon and gallium arsenide substrates

    International Nuclear Information System (INIS)

    YBaCuO and ErBaCuO films have been deposited on Si substrates with and without a ZrO/sub 2/ buffer layer and on GaAs substrates by RF diode sputtering from stoichiometric oxide targets. The films and interface between the films and semiconductor substrates are analyzed by Rutherford backscattering spectrometry (RBS), X-ray fluorescence spectroscopy (XRF), Auger electron spectroscopy (AES), energy dispersive X-ray spectrometry (EDAX), and scanning electron microscopy (SEM). The films grown on Si substrates with a ZrO/sub 2/ buffer layer show superconductivity above 65 K and no significant interaction at the interface is observed. High-T/sub c/ films can be obtained either by slow furnace annealing or by rapid heat-pulse annealing. No significant interaction is observed between YBaCuO (ErBaCuO) and GaAs after rapid thermal annealing at temperatures below 7500C

  2. Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide

    Science.gov (United States)

    Zarubin, A. N.; Kolesnikova, I. I.; Lozinskaya, A. D.; Novikov, V. A.; Skakunov, M. S.; Tolbanov, O. P.; Tyazhev, A. V.; Shemeryankina, A. V.

    2016-06-01

    We present the results of experimental studies of the dependences of the specific resistance, charge collection efficiency, product of the mobility on the lifetime (μ×τ)n, and current-voltage characteristics on the heat treatment regimes of X-ray Me-GaAs:Cr-Me-sensors. Experimental samples were the pad-sensors with the area of 0.1-0.25 cm2 and sensitive-layer thickness in the range of 400-500 μm. The values of (μ×τ)n were evaluated by measuring the dependence of the charge collection efficiency on the bias voltage when exposed to gamma rays from the source of 241Am. It is shown that heat treatment in the temperature range 200-500°C does not lead to a significant degradation of properties of Me-GaAs:Cr-Me-sensors and can be used in the manufacturing technology of matrix detectors of ionizing radiation.

  3. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    International Nuclear Information System (INIS)

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

  4. Synergic phototoxic effect of visible light or Gallium-Arsenide laser in the presence of different photo-sensitizers on Porphyromonas gingivalis and Fusobacterium nucleatum

    Directory of Open Access Journals (Sweden)

    Habibollah Ghanbari

    2015-01-01

    Conclusion: Within the limitations of this study, the synergic phototoxic effect of visible light in combination with each of the photosensitizers on P. gingivalis and F. nucleatum. However, the synergic phototoxic effect of laser exposure and hydrogen peroxide and curcumin as photosensitizers on F. nucleatum was not shown.

  5. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    Science.gov (United States)

    Carlin, Andrew M.

    Lattice-mismatched epitaxy in the III-V compound semiconductor system based on III-AsP and related alloys are of enormous importance, and considerable research interest, for many years. The reason is straightforward if one considers the limitations placed on available materials properties for devices dictated by lattice matching to the dominant substrate technologies - Si, GaAs (and/or Ge) and InP. For III-V epitaxy, the lattice constants of these substrates have defined a generation or more of device advances since growth of heterostructures possessing the same equilibrium lattice constants as the substrate yields essentially defect-free (specifically extended defect-free) materials and devices. Removing the restriction of lattice matching to current substrate technology opens a rich spectrum of bandgaps, bandgap combinations, conduction and valence band offsets, etc., that are desirable and exploitable for advancing device technologies for new functionality and greater performance. However successful exploitation of these properties requires mitigation of a variety of extended defects that result from the lattice mismatch between substrate and epitaxial heterostructures. A well known method to achieve this solution is through the use of compositionally (lattice constant-graded) buffer interlayers, in which the equilibrium lattice constants of interlayers are slowly altered by controlled changes in layer composition so that the mismatch strain between the initial substrate and the final device layers is spread across a thickness of buffer. The research accomplished has yielded success for both lattice constant ranges Si - GaAs and GaAs - InP. For the Si - GaAs system, a three step GaP nucleation process on Si has been developed and demonstrated, which maintains total avoidance of creating coalescence-related defects such as antiphase domains and stacking faults resulting from the initial III-V/IV interfaces while reducing overall threading dislocation density by ~10x, to a range of 1×107 cm-2, compared to current state of the art. This reduction can now enable future III-V/Si solar cells based on GaAsP metamorphic buffers in which the underlying Si substrate can participate as an active sub-cell, and such buffers have been demonstrated in this research. Second, in this same lattice constant range, novel GaP/SiGe interfaces on Si were grown and demonstrated to eliminate the small, but not negligible lattice misfit between GaP and Si, and provides a second pathway for future III-V/Si solar cell integration through subsequent metamorphic buffer growth. For the GaAs-InP range of lattice constants, multiple metamorphic buffer strategies, including those based on anion-specific quaternary GaInAsP, combinations of step and linearly-graded buffers, and buffers with multiple ternary alloys were all investigated. Micro-scale phase separation within quaternary anion-graded GaInAsP was identified as a mechanism to significantly inhibit proper lattice misfit strain relaxation, which was explained by thermodynamic arguments consistent with theoretical phase separation. This led to the creation of hybrid step and linearly graded InGaAs/InGaP metamorphic buffers through which phase separation was totally eliminated by avoiding specific compositions that were identified as sources for phase separation. These findings have enabled a realistic path for accessing the full range of bandgaps needed for future high efficiency III-V solar cells through optimized metamorphic III-V grading strategies.

  6. Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels. [in gallium arsenide crystals

    Science.gov (United States)

    Skowronski, M.; Lagowski, J.; Gatos, H. C.

    1986-01-01

    A high-resolution optical study was carried out on GaAs crystals grown by horizontal Bridgman and liquid-encapsulated-Czochralski methods. An excellent correlation was found between the intensity of the 1.039-eV no-phonon line and the characteristic absorption of EL2, the major deep donor level in GaAs. A correlation was also found between the characteristic optical absorption of EL2 and its concentration as determined by junction capacitance measurements. The presence of EL0, another midgap level contained in heavily oxygen-doped crystals at concentration always less than those of EL2, had no effect on the optical spectra, but altered the capacitance measurements. Accordingly, an accurate calibration for the determination of EL2 by optical absorption was obtained from capacitance measurements on crystals containing only EL2; in this way the uncertainties introduced by other midgap levels were eliminated.

  7. Etch rates for (100) gallium arsenide using aqueous H2SO4:H2O2 and aqua regia based etchants

    International Nuclear Information System (INIS)

    Etch rate experiments were carried out for (100) GaAs using etching solutions of H2SO4 :H2O2 :H2 O (3:1:1, 3:1:15), HCl:HNO3 (3:1), HCl:HNO3 :H2 O (1:1:1) and HCl:HNO3 :glycerol (with various dilutions of glycerol). Several differences were seen for the (100) plane compared to previous results for other crystal orientations. The sulphuric acid solutions showed much lower activation energies for etching the (100) plane. The HCl:HNO3 :glycerol solutions showed considerably lower etch rates for the (100) plane, probably indicating that they etch GaAs anisotropically. For a 1:1:2 solution of HCl:HNO3 :glycerol a decrease in the etch rate of (100) GaAs was observed in the presence of stirring. This is the opposite result to what is commonly assumed for this polishing etchant. It indicates that the main polishing process attributed to this etchant is not present, and in fact, the polishing quality of the etchant is probably limited by the etching process which is present. 14 refs., 8 figs

  8. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar

    International Nuclear Information System (INIS)

    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser (λ=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser (λ=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  9. Molecular beam epitaxy of gallium arsenide antimonide-based ultra-high-speed double heterojunction bipolar transistors and light emitting transistors

    Science.gov (United States)

    Wu, Bing-Ruey

    In this work, GaAsSb-based double heterojunction bipolar transistors (DHBTs) and light emitting transistors (LETs) are grown using gas source molecular beam epitaxy (GSMBE). High-speed GaAs0.5Sb0.5/InP DHBTs are developed through the exercise of GSMBE growth optimization, device fabrication, and characterization. By adjusting the growth temperature and V/III flux ratio, the optimal conditions for growing GaAs0.5Sb0.5 base are found to be at high growth temperature and low V/III ratio. The switching sequence is also optimized so that the Sb segregation effect is minimized. By using GaAs0.5Sb0.5-In0.2Ga0.8As 0.7Sb0.3 compositional grading in the base of the GaAsSb/InP DHBT, a significant improvement of fT from 380 GHz to 500 GHz was achieved compared to a uniform GaAs0.5Sb 0.5 DHBT, while maintaining a high breakdown voltage BVCEO ˜ 4V. The cutoff frequency---breakdown voltage product, fT·BVCEO, of over 2000 GHz-V, is the record value for DHBTs of any material system. Incorporating graded InAs-InGaAs emitter contact layer is also shown to effectively reduce the total emitter resistance, further improving the DHBT high speed performance. LET characteristics with quantum wells (QWs) inserted into the base region of GaAsSb/InP DHBTs are also investigated and the preliminary results are presented. An LET with a tensile strained InGaAsSb/GaAs0.65Sb 0.35 DQW in the base was designed and achieved the emission wavelength of ˜1.6 mum, despite of its low light output intensity. The potential and limitation of realizing a transistor laser with an emission wavelength of 1.55 mum using GaAsSb/InP material system will be discussed.

  10. Single crystal growth and characterizations of iron arsenide superconductor BaFe2−xNixAs2 (0.0 ≤ x ≤ 0.12)

    International Nuclear Information System (INIS)

    A series of big single crystals of BaFe2−xNixAs2 have been prepared by the FeAs self-flux method, with nominal nickel doping x = 0–0.12. The dimensions of the cleaved crystals are over 10 mm along ab plane and ∼2 mm in maximum along the c direction. The measurements of x-ray diffraction, electrical resistance and magnetic property are carried out on the crystals. For the undoped parent compound BaFe2As2, both resistance and magnetization data display an anomaly associated with spin density wave and/or structural phase transition, with the transition temperatures at ∼138 K. For Ni-doped BaFe2−xNixAs2 crystals, the superconducting critical temperature Tc ranges from 4.3 K for x = 0.06 sample to 20 K for the optimally doped x = 0.10 crystal. (condensed matter: structure, thermal and mechanical properties)

  11. Discovery of Isotopes of the Transuranium Elements with 93 <= Z <= 98

    OpenAIRE

    Fry, C; Thoennessen, M

    2012-01-01

    One hundred and five isotopes of the transuranium elements neptunium, plutonium, americium, curium, berkelium and californium have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  12. Inelastic Neutron Scattering Study of a Nonmagnetic Collapsed Tetragonal Phase in Nonsuperconducting CaFe2As2: Evidence of the Impact of Spin Fluctuations on Superconductivity in the Iron-Arsenide Compounds

    Science.gov (United States)

    Soh, J. H.; Tucker, G. S.; Pratt, D. K.; Abernathy, D. L.; Stone, M. B.; Ran, S.; Bud'ko, S. L.; Canfield, P. C.; Kreyssig, A.; McQueeney, R. J.; Goldman, A. I.

    2013-11-01

    The relationship between antiferromagnetic spin fluctuations and superconductivity has become a central topic of research in studies of superconductivity in the iron pnictides. We present unambiguous evidence of the absence of magnetic fluctuations in the nonsuperconducting collapsed tetragonal phase of CaFe2As2 via inelastic neutron scattering time-of-flight data, which is consistent with the view that spin fluctuations are a necessary ingredient for unconventional superconductivity in the iron pnictides. We demonstrate that the collapsed tetragonal phase of CaFe2As2 is nonmagnetic, and discuss this result in light of recent reports of high-temperature superconductivity in the collapsed tetragonal phase of closely related compounds.

  13. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ''single carrier'' response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus

  14. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

  15. Superconducting LaRu 2P 2 and other alkaline earth and rare earth metal ruthenium and osmium phosphides and arsenides with ThCr 2Si 2 structure

    Science.gov (United States)

    Jeitschko, W.; Glaum, R.; Boonk, L.

    1987-07-01

    The ThCr 2Si 2-type compounds MRu 2P 2 ( M = Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb), MOs 2P 2 ( M = Sr, Ba, Eu), and MRu 2As 2 ( M = Ca, Sr, Ba, La, Eu) were prepared by sintering techniques and/or by reaction of the elemental components in a tin flux. The crystal structures of SrRu 2P 2 and LaRu 2P 2 were refined from single-crystal diffractometer data to residuals of R = 0.019 (224 structure factors, 11 variable parameters) and R = 0.028 (510 F's, 11 variables), respectively. LaRu 2P 2 is diamagnetic and becomes superconducting at 4.1 K. No transition to a superconducting state was observed down to 1.8 K for the compounds MFe 2P 2 ( M = Ca, Sr, Ba, La), MRu 2P 2 ( M = Ca, Sr, Ba, Y), and MOs 2P 2 ( M = Sr, Ba).

  16. Neutron multiplicities for the transplutonium nuclides

    International Nuclear Information System (INIS)

    This paper continues, with respect to the transplutonium nuclides, earlier efforts to collate and evaluate data from the scientific literature on the prompt neutron multiplicity distribution from fission and its first moment = ΣnuPnu. The isotopes considered here for which P/sub nu/ and or data (or both) were found in the literature are of americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es), fermium (Fm), and nobelium (No)

  17. TOWARD AN IMPROVED UNDERSTANDING OF STRUCTURE AND MAGNETISM IN NEPTUNIUM AND PLUTONIUM PHOSPHONATES AND SULFONATES

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht-Schmitt, Thomas

    2012-03-01

    This grant supported the exploratory synthesis of new actinide materials with all of the actinides from thorium to californium with the exceptions of protactinium and berkelium. We developed detailed structure-property relationships that allowed for the identification of novel materials with selective ion-exchange, selective oxidation, and long-range magnetic ordering. We found novel bonding motifs and identified periodic trends across the actinide series. We identified structural building units that would lead to desired structural features and novel topologies. We also characterized many different spectroscopic trends across the actinide series. The grant support the preparation of approximately 1200 new compounds all of which were structurally characterized.

  18. Composition containing transuranic elements for use in the homeopathic treatment of aids

    International Nuclear Information System (INIS)

    A homeopathic remedy consisting of a composition containing one or more transuranic elements, particularly plutonium, for preventing and treating acquired immunodeficiency syndrome (AIDS) in humans, as well as seropositivity for human immunodeficiency virus (HIV). Said composition is characterized in that it uses any chemical or isotopic form of one or more transuranic elements (neptunium, plutonium, americium, curium, berkelium, californium or einsteinium), particularly plutonium, said form being diluted and dynamized according to conventional homeopathic methods, particularly the so-called Hahnemann and Korsakov methods, and provided preferably but not exclusively in the form of lactose and/or saccharose globules or granules impregnated with the active principle of said composition. (author)

  19. Detection of rare earth elements in Powder River Basin sub-bituminous coal ash using laser-induced breakdown spectroscopy (LIBS)

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Phuoc [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State; Mcintyre, Dustin [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State

    2015-10-01

    We reported our preliminary results on the use of laser-induced breakdown spectroscopy to analyze the rare earth elements contained in ash samples from Powder River Basin sub-bituminous coal (PRB-coal). We have identified many elements in the lanthanide series (cerium, europium, holmium, lanthanum, lutetium, praseodymium, promethium, samarium, terbium, ytterbium) and some elements in the actinide series (actinium, thorium, uranium, plutonium, berkelium, californium) in the ash samples. In addition, various metals were also seen to present in the ash samples

  20. PROCEEDINGS OF THE SYMPOSIUM COMMEMORATING THE 25th ANNIVERSARY OF ELEMENTS 97 and 98 HELD ON JAN. 20, 1975

    Energy Technology Data Exchange (ETDEWEB)

    Seaborg, Glenn T.; Street Jr., Kenneth; Thompson, Stanley G.; Ghiorso, Albert

    1976-07-01

    This volume includes the talks given on January 20, 1975, at a symposium in Berkeley on the occasion of the celebration of the 25th anniversary of the discovery of berkelium and californium. Talks were given at this symposium by the four people involved in the discovery of these elements and by a number of people who have made significant contributions in the intervening years to the investigation of their nuclear and chemical properties. The papers are being published here, without editing, in the form in which they were submitted by the authors in the months following the anniversary symposium, and they reflect rather faithfully the remarks made on that occasion.

  1. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar; Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio ({lambda}=830 nm) em pos-operatorio de exodontia de terceiros molares inferiores inclusos ou semi-inclusos

    Energy Technology Data Exchange (ETDEWEB)

    Atihe, Mauricio Martins

    2002-07-01

    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser ({lambda}=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser ({lambda}=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  2. High-power X- and Ka-band Gallium Nitride Amplifiers with Exceptional Efficiency Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Achieving very high-power amplification with maximum efficiency at X- and Ka-band is challenging using solid-state technology. Gallium Arsenide (GaAs) has been the...

  3. Pulse transformer for GaAs laser

    Science.gov (United States)

    Rutz, E. M.

    1976-01-01

    High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

  4. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    Energy Technology Data Exchange (ETDEWEB)

    Fitzgerald, M. [ed.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  5. NASA-OAST photovoltaic energy conversion program

    Science.gov (United States)

    Mullin, J. P.; Loria, J. C.

    1984-01-01

    The NASA program in photovoltaic energy conversion research is discussed. Solar cells, solar arrays, gallium arsenides, space station and spacecraft power supplies, and state of the art devices are discussed.

  6. Highly strained InAs quantum wells on InP substrates for mid-IR emission

    Science.gov (United States)

    Kim, Sangho; Kirch, Jeremy; Mawst, Luke

    2010-04-01

    Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (DQW) in a separate confinement hetero-structure (SCH) structure.

  7. The radiation influence on physical properties in photosensitive structure

    International Nuclear Information System (INIS)

    It was shown experimentally that in photosensitive structures with gallium arsenides - cadmium sulfides heterojunction the physical properties after γ-radiation exposure could be changed essentially and their photoelectrical characteristics improved. (author). 3 refs.; 2 figs

  8. Activities of the Solid State Physics Research Institute

    Science.gov (United States)

    1985-01-01

    Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.

  9. Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Oswald, Jiří; Komarnitskyy, V.; Kuldová, Karla; Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří

    2009-01-01

    Roč. 46, 1-2 (2009), 324-327. ISSN 0749-6036 R&D Projects: GA ČR GA202/06/0718; GA AV ČR IAA100100719 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * metal-organic vapor phase epitaxy * indium arsenide * gallium arsenide * photoluminescence * AFM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.910, year: 2009

  10. Type-I InAs quantum dots covered by GaAsSb strain reducing layer

    Czech Academy of Sciences Publication Activity Database

    Pokorný, M.; Kozák, M.; Trojánek, F.; Pangrác, Jiří; Hospodková, Alice

    Bellingham : SPIE, 2014 - (Cabrini, S.; Lerondel, G.; Schwartzberg, A.; Mokari, T.), s. 916113 ISBN 978-1-62841-188-1. ISSN 0277-786X. - (Proceedings of SPIE. 9161). [Conference on Nanophotonic Materials XI. San Diego, CA (US), 20.08.2014-21.08.2014] Institutional support: RVO:68378271 Keywords : indium arsenide * quantum dots * gallium arsenide * luminescence * near infrared * telecommunications * upconversion Subject RIV: BM - Solid Matter Physics ; Magnetism

  11. Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials

    OpenAIRE

    Rakesh Prasher; Devi Dass; Rakesh Vaid

    2013-01-01

    In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS), drain induced barrier lowering (DIBL), on and off current, carrier injection velocity (vinj), etc. The channel materials studied are Silicon (Si), Germanium (Ge), Gallium Arsenide (GaAs), Zinc Oxide (ZnO), Zinc Sulfide (ZnS), Indium Arsenide (InAs), Indium Phosphide (InP) and Indium Antimonide (...

  12. An atomic beam source for actinide elements: concept and realization

    International Nuclear Information System (INIS)

    For ultratrace analysis of actinide elements and studies of their atomic properties with resonance ionization mass spectroscopy (RIMS), efficient and stable sources of actinide atomic beams are required. The thermodynamics and kinetics of the evaporation of actinide elements and oxides from a variety of metals were considered, including diffusion, desorption, and associative desorption. On this basis various sandwich-type filaments were studied. The most promising system was found to consist of tantalum as the backing material, an electrolytically deposited actinide hydroxide as the source of the element, and a titanium covering layer for its reduction to the metal. Such sandwich sources were experimentally proven to be well suited for the production of atomic beams of plutonium, curium, berkelium and californium at relatively low operating temperatures and with high and reproducible yields. (orig.)

  13. EC decay of 244Bk

    Science.gov (United States)

    Sodaye, Suparna; Tripathi, R.; Sudarshan, K.; Sharma, S. K.; Pujari, P. K.; Palit, R.; Mukhopadhyay, S.

    2014-12-01

    Berkelium isotopes have been produced in 11B-induced reaction on 238U. The EC decay of 244Bk → 244Cm has been studied by carrying out the single and coincidence measurements of the γ-rays emitted during the de-excitation of the 244Cm levels. Radiochemical separations have been carried out to minimize the contribution from the fission products and target. The new half-life of 244Bk is obtained as 5.02 ± 0.03 h, which is close to the theoretically calculated value. The relative intensities of the decay γ-rays have been re-evaluated. Based on the coincidence measurements, a tentative partial level scheme for 244Bk → 244Cm decay has been proposed.

  14. Nuclear fission and the transuranium elements

    International Nuclear Information System (INIS)

    Many of the transuranium elements are produced and isolated in large quantities through the use of neutrons furnished by nuclear fission reactions: plutonium (atomic number 94) in ton quantities; neptunium (93), americium (95), and curium (96) in kilogram quantities; berkelium (97) in 100 milligram quantities; californium (98) in gram quantities; and einsteinium (99) in milligram quantities. Transuranium isotopes have found many practical applications---as nuclear fuel for the large-scale generation of electricity, as compact, long-lived power sources for use in space exploration, as means for diagnosis and treatment in the medical area, and as tools in numerous industrial processes. Of particular interest is the unusual chemistry and impact of these heaviest elements on the periodic table. This account will feature these aspects. 9 refs., 5 figs

  15. Nuclear fission and the transuranium elements

    Energy Technology Data Exchange (ETDEWEB)

    Seaborg, G.T.

    1989-02-01

    Many of the transuranium elements are produced and isolated in large quantities through the use of neutrons furnished by nuclear fission reactions: plutonium (atomic number 94) in ton quantities; neptunium (93), americium (95), and curium (96) in kilogram quantities; berkelium (97) in 100 milligram quantities; californium (98) in gram quantities; and einsteinium (99) in milligram quantities. Transuranium isotopes have found many practical applications---as nuclear fuel for the large-scale generation of electricity, as compact, long-lived power sources for use in space exploration, as means for diagnosis and treatment in the medical area, and as tools in numerous industrial processes. Of particular interest is the unusual chemistry and impact of these heaviest elements on the periodic table. This account will feature these aspects. 9 refs., 5 figs.

  16. EC decay of 244Bk

    International Nuclear Information System (INIS)

    Berkelium isotopes have been produced in 11B-induced reaction on 238U. The EC decay of 244Bk → 244Cm has been studied by carrying out the single and coincidence measurements of the γ-rays emitted during the de-excitation of the 244Cm levels. Radiochemical separations have been carried out to minimize the contribution from the fission products and target. The new half-life of 244Bk is obtained as 5.02 ± 0.03 h, which is close to the theoretically calculated value. The relative intensities of the decay γ-rays have been re-evaluated. Based on the coincidence measurements, a tentative partial level scheme for 244Bk → 244Cm decay has been proposed. (paper)

  17. Production of transuranium elements

    International Nuclear Information System (INIS)

    The Radiochemical Engineering Development Center (REDC) has the programmatic responsibility for the Department of Energy's Transuranium Element Program. Principle elements from the program are einsteinium, berkelium, and fermium. Targets containing curium oxide mixed with aluminum powder are fabricated by the REDC and irradiated in the Oak Ridge National Laboratory (ORNL) High Flux Isotope Reactor. Following an irradiation period of 6-12 months, targets are returned to the REDC for chemical processing. Processing operations consists of aluminum dejacketing in a caustic-nitrate solution, filtration, acid dissolution, solvent extraction, anion exchange, and finally a cation exchange to recover the actinides. The processing operations take place in heavily shielded hot cell facilities and all operations are carried out remotely. The chemistry for the separations has been well established over the 26-yr. operating life of the facility

  18. Peeled film GaAs solar cell development

    International Nuclear Information System (INIS)

    Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>106) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Alx Ga1-x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

  19. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  20. Film germanium strain gauges for cryogenic temperatures

    International Nuclear Information System (INIS)

    Strain-measuring characteristics of strain gauges (SG) based on germanium films on gallium arsenide designed for operation in 4-100 K temperature interval and strain range ε∼(±0.3%) are presented. SG are characterized by weak temperature dependences of resistance and strain sensitivity in the temperature range measured. It is shown that in the low-temperature region SG based on heteroepitaxial germanium films on gallium arsenide are no worse than the best domestic and foreign semiconducting and metal SG and are perspective for cryogenic object diagnostics under magnetic field effect

  1. The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

    Science.gov (United States)

    Curtis, H. B.; Hart, R. E., Jr.

    1982-01-01

    Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

  2. Application and development of density functional theory.

    OpenAIRE

    Choudhury, R.

    2006-01-01

    This thesis concerns developments and applications using the density functional theory (DFT) ab initio electronic structure method. Implementation of a pseudo atomic orbital (PAO) basis set in the linear scaling DFT program CONQUEST is reported and used to test aspects of the linear scaling algorithm. Also a separate study using plane-wave DFT (VASP code) to model the strained growth of Indium Arsenide (InAs) on the (110) surface of Gallium Arsenide (GaAs), in particular the formation of a st...

  3. Isovalent impurities in A3B5 compounds

    International Nuclear Information System (INIS)

    Results of investigation of properties in gallium arsenide alloyed with isovalent additions (antimony and indium) are considered. An attempt to interpret the results obtained with provision for changes in groups of point defects induced by isovalent additions (JA) introduction is made. An assumption is confirmed that JA change relation between concentrations of intrinsic defects. For example, in the hole-type GaAs:Ge material introduction of Sb leads to hole concentration increase at the expense of a decrease of Ga self-compensation degree. Effect of additions on electrical and optical properties of gallium arsenide is explained

  4. Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

    Science.gov (United States)

    1984-01-01

    Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

  5. Angle - resolved photoemission study of two phases of the GaAs(100)-c(4x4) surface

    Czech Academy of Sciences Publication Activity Database

    Cukr, Miroslav; Jiříček, Petr; Bartoš, Igor; Sadowski, J.

    2008-01-01

    Roč. 100, - (2008), 072017/1-072017/4. ISSN 1742-6588 R&D Projects: GA AV ČR IAA100100628; GA ČR GA202/07/0601 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * molecular beam epitaxy * photoelectron spectroscopy * surface reconstruction * surface phases * electron states Subject RIV: BM - Solid Matter Physics ; Magnetism

  6. Advanced infrared photomultiplier

    Science.gov (United States)

    Sonnenberg, H.; Taynal, J. D.

    1972-01-01

    Photocathode for the 8500 angstrom through 9000 angstrom range, improving efficiency by an order of magnitude, is achieved with a gallium arsenide cesium oxide photocathode. Protection of the GaAs surface from contamination during bake-out is another important function.

  7. Scratch encourages selective doping

    Science.gov (United States)

    Hawrylo, F. Z.; Kressel, H.

    1980-01-01

    Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.

  8. Fast Clock Recovery for Digital Communications

    Science.gov (United States)

    Tell, R. G.

    1985-01-01

    Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

  9. Low level laser therapy on experimental myopathy

    OpenAIRE

    Dávila, Soledad; Vignola, María Belén; Cremonezzi, David; Simes, Juan C.; Soriano, Fernando; Campana, Vilma R.

    2011-01-01

    Purpose: The aim of the present work was to study the effect of Helium-Neon (HeNe) and Gallium Arsenide (GaAs) laser upon nitric oxide (NO) plasma levels, an inflammatory biomarker associated with oxidative stress, in rats with experimental myopathy. These were evaluated through histological assessment.

  10. Tunable structures and modulators for THz light

    Czech Academy of Sciences Publication Activity Database

    Kužel, Petr; Kadlec, Filip

    2008-01-01

    Roč. 9, - (2008), 197-214. ISSN 1631-0705 R&D Projects: GA AV ČR KJB100100512; GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : terahertz radiation * tunable devices * photonic crystals * strontium titanate * gallium arsenide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.164, year: 2008

  11. High-resolution X-ray diffraction and electron microscopy study of porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Lomov, A. A.; Grym, Jan; Nohavica, Dušan; Orehov, A.S.; Vasil'ev, A. L.; Novikov, D. V.

    BELLINGHAM: SPIE, 2013 - (Orlikovsky, A.) ISBN 9780819494870. ISSN 0277-786X. [International Conference Micro- and Nano-Electronics 2012. Zvenlgorod (RU), 01.10.2012-5.10.2012] R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Etching * Diffraction * Galllium arsenide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  12. First principles study of structural, electronic and magnetic properties of magnesium

    Science.gov (United States)

    Abdel Rahim, G. P.; Rodríguez M, J. A.; Moreno-Armenta, M. G.

    2016-02-01

    We investigated the structural, electronic, and magnetic properties of Mg, in the CS (simple cubic), NiAs (Nickel arsenide), FCC (rock-salt), R (Rhombohedral), Diamond and WZ (wurtzite) phases. Calculations were performed using the first-principles pseudo-potential method within the framework of spin-density functional theory (DFT).

  13. Satellite Power System Concept Development and Evaluation Program, Critical Supporting Investigations. Summary

    Science.gov (United States)

    Seyl, J. W.

    1980-01-01

    Investigations in critical technology of the solar power satellite (SPS) concept development program are summarized. Studies of the potential application of fiber optics transmission links across the SPS one kilometer antenna and evaluation of gallium arsenide field effect transistors and their associated power amplifier circuitry are discussed in more detail.

  14. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  15. Efficient frequency comb generation in AlGaAs-on-insulator

    DEFF Research Database (Denmark)

    Pu, Minhao; Ottaviano, Luisa; Semenova, Elizaveta;

    2016-01-01

    The combination of nonlinear and integrated photonics enables Kerr frequency comb generation in stable chip-based microresonators. Such a comb system will revolutionize applications, including multi-wavelength lasers, metrology, and spectroscopy. Aluminum gallium arsenide (AlGaAs) exhibits very h...

  16. Preliminary materials assessment for the Satellite Power System (SPS)

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, R.R.; Jamieson, W.M.

    1980-01-01

    Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

  17. Modeling of High Efficiency Solar Cells Under Laser Pulse for Power Beaming Applications

    Science.gov (United States)

    Jain, Raj K.; Landis, Geoffrey A.

    1994-01-01

    Solar cells may be used as receivers for laser power beaming. To understand the behavior of solar cells when illuminated by a pulsed laser, the time response of gallium arsenide and silicon solar cells to pulsed monochromatic input has been modeled using a finite element solar cell model.

  18. Low temperature transport in p-doped InAs nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal;

    2013-01-01

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

  19. 500 MHz transient digitizers based on GaAs CCDs

    International Nuclear Information System (INIS)

    A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD's are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors)

  20. 500 MHz transient digitizers based on GaAs CCDs

    International Nuclear Information System (INIS)

    A wide bandwidth transient digitizer based on a recently produced gallium arsenide charged coupled device is under development. The CCDs have 128 pixels and operate at 500 MHz. Initial testing of prototype modules in Experiment 787 at Brookhaven National Laboratory is reported. (Author) (8 refs., 10 figs.)

  1. Simple intrinsic defects in InAs : numerical predictions.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  2. Quantum dot photonic crystal lasers

    OpenAIRE

    Yoshie, T.; Shchekin, O. B.; Chen, H.; Deppe, D. G.; Scherer, A.

    2002-01-01

    Coupled cavity designs on two-dimensional square lattice photonic crystal slabs were used to demonstrate optically pumped indium arsenide quantum dot photonic crystal lasers at room temperature. Threshold pump powers of 120 and 370 μW were observed for coupled cavities including two and four defect cavities defined in optimised photonic crystals.

  3. An in-vacuum diffractometer for resonant elastic soft x-ray scattering

    Czech Academy of Sciences Publication Activity Database

    Hawthorn, D.G.; He, F.; Venema, L.; Davis, H.; Achkar, A.J.; Zhang, J.; Sutarto, R.; Wadati, H.; Radi, A.; Wilson, T.; Wright, G.; Shen, K.M.; Geck, J.; Zhang, H.; Novák, Vít; Sawatzky, G.A.

    2011-01-01

    Roč. 82, č. 7 (2011), 073104/1-073104/8. ISSN 0034-6748 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * lanthanum compounds * manganese compounds * neodymium * reflectivity * semiconductor thin films * strontium compounds * X-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.367, year: 2011

  4. High-temperature optically activated GaAs power switching for aircraft digital electronic control

    Science.gov (United States)

    Berak, J. M.; Grantham, D. H.; Swindal, J. L.; Black, J. F.; Allen, L. B.

    1983-01-01

    Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

  5. Nuclear Chemistry Institute, Mainz University. Annual Report 1995

    International Nuclear Information System (INIS)

    The annual report of the Institut fuer Kernchemie addresses inter alia three main research activities. The first belongs to the area of basic research, covering studies in the fields of nuclear fission, chemistry of the super-heavy elements and of heavy-ion reactions extending from the Coulomb barrier to relativistic energies, and nuclear astrophysics in connection with the ''r process''. By means of laser technology, high-precision data could be measured of the ionization energies of berkelium and californium. Studies of atomic clusters in the vacuum of an ionization trap revealed interesting aspects. The second major activity was devoted to the analysis of environmental media, applying inter alia neutron activation analysis and resonance ionization mass spectroscopy (RIMS). The third activity resulted in the development of novel processes, or the enhancement of existing processes or methods, for applications in basic research work and in environmental analytics. Another item of interest is the summarizing report on the operation of the TRIGA research reactor. (orig./SR)

  6. Paul Scherrer Institute Scientific Report 1999. Volume I: Particles and Matter

    International Nuclear Information System (INIS)

    Although originally planned for fundamental research in nuclear physics, the particle beams of pions, muons, protons and neutrons are now used in a large variety of disciplines in both natural science and medicine. The beams at PSI have the world's highest intensities and therefore allow certain experiments to be performed, which would not be possible elsewhere. The highlight of research this year was the first-ever determination of the chemical properties of the superheavy element 107 Bohrium. This was undertaken, by an international team led by H. Gaeggeler of PSI's Laboratory for Radiochemistry. Bohrium was produced by bombarding a Berkelium target with Neon ions from the Injector I cyclotron and six atoms were detected after having passed through an online gas chromatography device. At the Laboratory for Particle Physics the focus has shifted from nuclear physics to elementary particle physics with about a fifty-fifty split between investigations of rare processes or particle decays using the high intensity muon, pion and recently also polarized neutron beams of PSI, and research at the highest energy frontier at CERN (Geneva) and DESY (Hamburg). Important space instrumentation has been contributed by the Laboratory for Astrophysics to the European Space Agency and NASA satellite programmes. The Laboratory for Micro and Nanotechnology continued to focus on research into molecular nanotechnology and SiGeC nanostructures, the latter with the aim of producing silicon based optoelectronics. Progress in 1999 in these topical areas is described in this report. A list of scientific publications in 1999 is also provided

  7. Investigations for the influence of geochemical parameters on the sorption and desorption of lanthanides and uranium onto opalinus clay as potential host rock for a repository

    International Nuclear Information System (INIS)

    The development of a disposal in deep geological formations for radioactive waste is a very important task for the future. The safety assessment for more than a hundred thousand years needs a full understanding of all processes of interaction between the radioactive waste and the surrounded formations. This work contributes to this understanding. The interaction between lanthanides (homologues of the actinides americium, curium and berkelium) / uranium and the host rock opalinus clay under influence of organic substances (NOM) have been analyzed and discussed. The complex system was split into 3 binary basic systems with the following interactions - Interactions between lanthanides / uranium and NOM - Interactions between lanthanides / uranium and the opalinus clay - Interactions between NOM and opalinus clay All binary systems can be influenced by geological parameters like pH, ion strength and competing cations. The sorption / desorption of the lanthanides onto the opalinus clay is analyzed via inductively coupled plasma mass spectrometry. For the investigation of the complexation behavior of metals with NOM we used capillary electrophoresis coupled with inductively coupled plasma mass spectrometry. Under these conditions the chosen model organic humic acid affected the sorption of the lanthanides onto opalinus clay favorably. The smaller organic compounds, which dominate in the composition of the clay organics, remobilized the metals after sorption onto clay and the sorption can be inhibited by NOM. Due to the reduced metal sorption onto Opalinus clay by NOM, a migration through the clay may be possible.

  8. Development of electrochemical photovoltaic cells. Third technical progress report, November 1, 1979-January 31, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Byker, H.J.; Schwerzel, R.E.; Wood, V.E.; Austin, A.E.; Brooman, E.W.

    1980-03-07

    The development of stable, efficient, electrochemical photovoltaic cells based on silicon and gallium arsenide in non-aqueous electrolyte systems is being investigated. The effect of surface condition of silicon electrodes on electrochemical and physical characteristics has been studied. An electrode-supporting electrolyte interaction in acetonitrile has been identified which leads to etching of the surface. Improved performance can result, which has practical significance. Gallium arsenide electrodes have been electrochemically characterized in cells containing propylene carbonate with a ferrocene/ferricenium redox additive. Degradation of the ferricenium salt under illumination has been investigated. Other redox couples studied to date have not given promising results. Long-term stability experiments have been deferred while a better understanding of electrode behavior is being obtained.

  9. Direct imaging of the structural domains in the iron pnictides AFe2As2 (A=Ca, Sr, Ba)

    International Nuclear Information System (INIS)

    The parent compounds of recently discovered iron-arsenide superconductors, AFe2As2 with alkaline earth A=Ca,Sr,Ba, undergo simultaneous structural and magnetic phase transitions at a temperature TSM. Using a combination of polarized light microscopy and spatially resolved high-energy synchrotron x-ray diffraction we show that the orthorhombic distortion leads to the formation of 45o-type structural domains in all parent compounds. Domains penetrate through the sample thickness in the c direction and are not affected by crystal imperfections such as growth terraces. The domains form regular stripe patterns in the plane with a characteristic dimension of 10--50 μm. The direction of the stripes is fixed with respect to the tetragonal (100) and (010) directions but can change by 90o on thermal cycling through the transition. This domain pattern may have profound implications for intrinsic disorder and anisotropy of iron arsenides.

  10. Inter-granular current in iron-oxypnictide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Tamegai, T., E-mail: tamegai@ap.t.u-tokyo.ac.j [Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); JST, Transformative Research-Project on Iron Pnictides (TRIP), Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tsuchiya, Y. [Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakajima, Y. [Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); JST, Transformative Research-Project on Iron Pnictides (TRIP), Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Kamihara, Y. [JST, Transformative Research-Project on Iron Pnictides (TRIP), Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2010-11-01

    Inter- and intragranular currents, J{sub c}{sup inter} and J{sub c}{sup intra}, in LaFePO{sub 0.94}F{sub 0.06} polycrystalline sample are evaluated by measuring the remanent-state field profile using magneto-optical imaging method. Obtained images show the absence of magnetic field modulation associated with the weak-link nature of grain boundaries, indicating that J{sub c}{sup inter} and J{sub c}{sup intra} are comparable in magnitude in contrast to other iron-arsenide superconductors. J{sub c}{sup inter} is estimated to be 2 x 10{sup 4} A/cm{sup 2} in the limit of T = 0 K, which is larger than the values in other iron-arsenide superconductors. Implication of these J{sub c} behavior is discussed in relation with possible pairing symmetries.

  11. Magneto-optical imaging of polycrystalline LaFePO{sub 1-x}F{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchiya, Y., E-mail: tt097125@mail.ecc.u-tokyo.ac.j [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakajima, Y.; Tamegai, T. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); JST, Transformative Research-Project on Iron Pnictides (TRIP), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Kamihara, Y. [TRIP, JST in Materials and Structure Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hirao, M. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2010-12-15

    The remanent state field profile has been observed in polycrystalline LaFePO{sub 0.94}F{sub 0.06} by magneto-optical (MO) imaging method. MO images show the absence of magnetic field modulation associated with weak-link nature of grain boundaries, indicating that the inter-grain critical current density J{sub c}{sup inter} is comparable to intra-grain critical current density J{sub c}{sup intra} in contrast to iron-arsenide superconductors. J{sub c}{sup inter} is estimated as 1.9 x 10{sup 4} A/cm{sup 2} at T = 0 K from magnetization measurement, which is similar to the values in iron-arsenide superconductors. Implication of these J{sub c} behavior is discussed in relation to the possible pairing symmetry.

  12. Coherent Cancellation of Photothermal Noise in GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg Mirrors

    CERN Document Server

    Chalermsongsak, Tara; Cole, Garrett D; Follman, David; Seifert, Frank; Arai, Koji; Gustafson, Eric K; Smith, Joshua R; Aspelmeyer, Markus; Adhikari, Rana X

    2015-01-01

    Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optimized to reduce thermo-optic noise by inducing coherent cancellation of the thermoelastic and thermorefractive effects. By measuring the photothermal transfer function of these mirrors, we find evidence that this optimization has been successful.

  13. Coherent cancellation of photothermal noise in GaAs/Al0.92Ga0.08As Bragg mirrors

    Science.gov (United States)

    Chalermsongsak, Tara; Hall, Evan D.; Cole, Garrett D.; Follman, David; Seifert, Frank; Arai, Koji; Gustafson, Eric K.; Smith, Joshua R.; Aspelmeyer, Markus; Adhikari, Rana X.

    2016-04-01

    Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optimized to reduce thermo-optic noise by inducing coherent cancellation of the thermoelastic and thermorefractive effects. By measuring the photothermal transfer function of these mirrors, we find evidence that this optimization has been successful.

  14. Pseudogap and its critical point in the heavily doped Ba(Fe1-xCox)2As2 from c -axis resistivity measurements

    Science.gov (United States)

    Tanatar, M. A.; Ni, N.; Thaler, A.; Bud'Ko, S. L.; Canfield, P. C.; Prozorov, R.

    2010-10-01

    Temperature-dependent interplane resistivity, ρc(T) , was used to characterize the normal state of the iron-arsenide superconductor Ba(Fe1-xCox)2As2 over a broad doping range 0≤xTCG , vanishes at xCG≃0.30 , paving the way to metallic, T linear, ρc(T) close to xCG and superlinear T dependence for x>xCG . None of these features are evident in the in-plane resistivity ρa(T) . For doping levels xxCG . These features are consistent with the existence of a charge gap, accompanying formation of the magnetic pseudogap, and its critical suppression with doping. The inferred c -axis charge gap reflects the three-dimensional character of the electronic structure and of the magnetism in the iron arsenides.

  15. Multi-spectral optical absorption in substrate-free nanowire arrays

    International Nuclear Information System (INIS)

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  16. Experimental '' of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs

    Indian Academy of Sciences (India)

    G Raja Sudha; K Vimala Devi; D Arthi; S Prasanna Subramanian; N Srinivasan; R Saravanan

    2002-08-01

    Anomalous dispersion effects lead to the modification of the measured X-ray structure factors. In this work, we have determined the imaginary part of the anomalous dispersion correction terms ('' ) of arsenide atom (As), through the X-ray data collected using spherical single crystal of GaAs, at various temperatures, i.e. 170, 200, 250 and 300 K. It is stressed that more measurements of '' of the elements are needed to confirm the theoretical calculations.

  17. Monolithic AlGaAs second-harmonic nanoantennas

    CERN Document Server

    Gili, V F; Locatelli, A; Rocco, D; Finazzi, M; Ghirardini, L; Favero, I; Gomez, C; Lemaître, A; Celebrano, M; De Angelis, C; Leo, G

    2016-01-01

    We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical anoantennas. Using a selective oxidation technique, we fabricate such epitaxial semiconductor nanoparticles on an aluminum oxide substrate. Second harmonic generation from an AlGaAs nanocylinder of height h=400 nm and varying radius pumped with femtosecond pulses delivered at 1554-nm wavelength has been measured, revealing a peak conversion efficiency exceeding 10-5 for nanocylinders with an otpimized geometry.

  18. Rapid, Sensitive, and Reusable Detection of Glucose by a Robust Radiofrequency Integrated Passive Device Biosensor Chip

    OpenAIRE

    Nam-Young Kim; Kishor Kumar Adhikari; Rajendra Dhakal; Zorigt Chuluunbaatar; Cong Wang; Eun-Soo Kim

    2015-01-01

    Tremendous demands for sensitive and reliable label-free biosensors have stimulated intensive research into developing miniaturized radiofrequency resonators for a wide range of biomedical applications. Here, we report the development of a robust, reusable radiofrequency resonator based integrated passive device biosensor chip fabricated on a gallium arsenide substrate for the detection of glucose in water-glucose solutions and sera. As a result of the highly concentrated electromagnetic ener...

  19. Preparation and properties of GaInP.sub.2./sub./GaAs heterostructures

    Czech Academy of Sciences Publication Activity Database

    Nohavica, Dušan; Gladkov, Petar; Žďánský, Karel

    Praha: MAXDORF, 2004 - (Nitsch, K.; Rodová, M.), s. 45-46 ISBN 80-7345-032-1. [Development of Materials Science in Research and Education - DMS -RE 2004 /14./. Lednice (CZ), 31.08.2004-03.09.2004] R&D Projects: GA MŠk(CZ) ME 610 Institutional research plan: CEZ:AV0Z2067918 Keywords : gallium arsenide * indium compounds * semiconductors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  20. Determination of the effective mechanism of chemically stimulated diffusion in semiconductors at their interaction with an atomic hydrogen

    International Nuclear Information System (INIS)

    Paper is devoted to calculate coefficients of chemically stimulated diffusion (CSD) of some impurities in near-the-surface layers of germanium and gallium arsenide following well-known mechanisms to determine governing mechanism of CSD depending on type of diffusing impurity and conditions to carry out experiment. Calculation results of CSD coefficients following the mentioned mechanisms for copper in germanium showed that their efficiency was rather unimpressive in contrast to CSD mechanisms associated with energy transfer to crystal atomic subsystem

  1. Laser therapy in the treatment of nonspecific lung diseases in children.

    OpenAIRE

    Lola Muhamadieva

    2010-01-01

    Endobronchial laser therapy was used in children with nonspecific lung diseases. Effectiveness of laser therapy was evaluated by use of cytogram of bronchoalveolar lavage fluid (BALF). There was observation of 29 children with nonspecific lung diseases: they had been performed endobronchial laser therapy with use of gallium arsenide laser. This investigation has proved the effectiveness of laser therapy, and the method is recommended for treatment of nonspecific lung diseases in children.

  2. Use of accelerated helium-3 ions for determining oxygen and carbon impurities in some pure materials

    Science.gov (United States)

    Aleksandrova, G. I.; Borisov, G. I.; Demidov, A. M.; Zakharov, Y. A.; Sukhov, G. V.; Shmanenkova, G. I.; Shchelkova, V. P.

    1978-01-01

    Methods are developed for the determination of O impurity in Be and Si carbide and concurrent determination of C and O impurities in Si and W by irradiation with accelerated He-3 ions and subsequent activity measurements of C-11 and F-18 formed from C and O with the aid of a gamma-gamma coincidence spectrometer. Techniques for determining O in Ge and Ga arsenide with radiochemical separation of F-18 are also described.

  3. Time-resolved lasing action from single and coupled photonic crystal nanocavity array lasers emitting in the telecom-band

    CERN Document Server

    Englund, Dirk; Vuckovic, Jelena

    2008-01-01

    We measure the lasing dynamics of single and coupled photonic crystal nanocavity array lasers fabricated in the indium gallium arsenide phosphide material system. Under short optical excitation, single cavity lasers produce pulses as fast as 11 ps (FWHM), while coupled cavity lasers show significantly longer lasing duration which is not explained by a simple rate equations model. A Finite Difference Time Domain simulation including carrier gain and diffusion suggests that asynchronous lasing across the nanocavity array extends the laser's pulse duration.

  4. Improved optomechanical disk resonator sitting on a pedestal mechanical shield

    International Nuclear Information System (INIS)

    We experimentally demonstrate the controlled enhancement of the mechanical quality factor Q of gallium arsenide disk optomechanical resonators. Disks vibrating at 1.3 GHz with a mechanical shield integrated in their pedestal show a Q improvement by a factor 10–16. The structure is modeled numerically and different modes of vibration are observed, which shed light on the Q enhancement mechanism. An optimized double-disk geometry is presented that promises Q above the million for a large parameter range. (paper)

  5. Single and multiband THz Metamaterial Polarizers

    OpenAIRE

    Sangala, Bagvanth Reddy; Nagarajan, Arvind; Deshmukh, Prathmesh; Surdi, Harshad; Rana, Goutam; Gopal, Achanta Venu; Prabhu, S. S.

    2015-01-01

    We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. The dependence of the resonance frequency of the single band polarizer on the length of t...

  6. Description of an Immersed Photovoltaic Concentrating Solar Power System

    OpenAIRE

    Falbel, Gerald

    1998-01-01

    Recent advancements in photovoltaic solar cells made from Gallium Arsenide (GaAs) have shown that with concentration ratios greater than one solar constant, overall efficiencies up to 23% can be achieved. A second issue applicable to solar power systems for spacecraft is the cost driver, which requires that the efficiency/weight ratio be improved so that solar panels with high output, weighing less, will reduce payload weights, which, in turn, reduces launch costs. This has resulted in a "Fig...

  7. Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells

    OpenAIRE

    Moura Dias Mendes, Manuel Joao de; Hernández Martín, Estela; Tobías Galicia, Ignacio; Martí Vega, Antonio; Luque López, Antonio

    2010-01-01

    The high near-field enhancement occurring in the vicinity of metallic nanoparticles (MNPs) sustaining surface plasmons can only be fully exploited in photovoltaic devices if the MNPs are placed inside their semiconducting material, in the photoactive region. In this work an experimental procedure is studied to embed MNPs in gallium arsenide (GaAs) and silicon (Si), which can be applied to other semiconductor host materials. The approach consists in spin-coating colloidal MNPs dispersed i...

  8. Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

    OpenAIRE

    Haigh, J. A.; Ciccarelli, C; Betz, A. C.; Irvine, A; Novák, V.; Jungwirth, T.; Wunderlich, J.

    2015-01-01

    The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization t...

  9. Small Business Innovations (Photodetector)

    Science.gov (United States)

    1991-01-01

    Epitaxx, Inc. of Princeton, NJ, developed the Epitaxx Near Infrared Room Temperature Indium-Gallium-Arsenide (InGaAs) Photodetector based on their Goddard Space Flight Center Small Business Innovation Research (SBIR) contract work to develop a linear detector array for satellite imaging applications using InGaAs alloys that didn't need to be cooled to (difficult and expensive) cryogenic temperatures. The photodetectors can be used for remote sensing, fiber optic and laser position-sensing applications.

  10. Use of a semiconductor-diode laser in urology

    Science.gov (United States)

    Watson, Graham M.

    1994-05-01

    The gallium arsenide semiconductor laser can emit in the near infrared where the depth of penetration into tissue is great although scattering is less than with the Nd:YAG laser. The laser is highly compact. It runs off a normal electrical outlet with no cooling requirement. It is therefore quiet and convenient. The laser has been assessed in a wide variety of applications in our urological department.

  11. Near K-edge linear attenuation coefficients for amorphous and crystalline GaAs

    International Nuclear Information System (INIS)

    We present tabulated near K-edge linear attenuation coefficients for stoichiometric crystalline and amorphous gallium arsenide. The coefficients were derived from total electron yield photocurrent measurements at the Daresbury Synchrotron Radiation Source and show considerable near-edge structure when compared to curves generated from standard atomic data tables. However, very little difference is found between the crystalline and amorphous samples, suggesting that the bulk of the structure arises from the local coordination environment

  12. Satellite power system: Concept development and evaluation program, reference system report

    Science.gov (United States)

    1979-01-01

    The Satellite Power System (SPS) Reference System is discussed and the technical and operational information required in support of environmental, socioeconomic, and comparative assessment studies are emphasized. The reference System concept features a gallium-aluminum-arsenide, and silicon solar cell options. Other aspects of an SPS are the construction of bases in space, launch and mission control bases on earth, and fleets of various transportation vehicles to support the construction and maintenance operations of the satellites.

  13. Results from the high efficiency solar panel experiment flown on CRRES

    International Nuclear Information System (INIS)

    This paper presents results from the High Efficiency Solar Panel Experiment (HESP) flown on the Combined Release and Radiation Effects Satellite (CRRES). The on-orbit solar cell degradation is correlated with the proton and electron environments. Comparisons between gallium arsenide germanium (GaAs/Ge) and silicon (Si) solar cells are presented, and results from three different annealing methods of like GaAs solar cells are compared

  14. Improved retrieval of gas abundances from near-infrared solar FTIR spectra measured at the Karlsruhe TCCON station

    OpenAIRE

    Kiel, M.; Wunch, D.; Wennberg, P. O.; Toon, G. C.; Hase, F.; Blumenstock, T.

    2016-01-01

    We present a modified retrieval strategy for solar absorption spectra recorded by the Karlsruhe Fourier Transform Infrared (FTIR) spectrometer, which is operational within the Total Carbon Column Observing Network (TCCON). In typical TCCON stations, the 3800–11 000 cm−1 spectral region is measured on a single extended Indium Gallium Arsenide (InGaAs) detector. The Karlsruhe setup instead splits the spectrum across an Indium Antimonide (InSb) and InGaAs detecto...

  15. High-Temperature Superconductivity in Doped BaFe2As2

    International Nuclear Information System (INIS)

    This thesis provides a detailed look on the synthesis, structural features and physical properties of iron arsenides. Especially the properties of BaFe2As2 and the solid solutions (Ba1-xKx)Fe2As2, (Ba1-xSrx)Fe2As2 and BaFe2(As1-xPx)2 which were all synthesized by solid state reactions by heating mixtures of the elements, were intensively investigated.

  16. Thermionic photovoltaic energy converter

    Science.gov (United States)

    Chubb, D. L. (Inventor)

    1985-01-01

    A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

  17. The effectiveness of low laser therapy in subacromial impingement syndrome: a randomized placebo controlled double‐blind prospective study

    OpenAIRE

    Sebnem Koldas Dogan; Saime Ay; Deniz Evcik

    2010-01-01

    OBJECTIVES: Conflicting results were reported about the effectiveness of Low level laser therapy on musculoskeletal disorders. The aim of this study was to investigate the effectiveness of 850-nm gallium arsenide aluminum (Ga-As-Al) laser therapy on pain, range of motion and disability in subacromial impingement syndrome. METHODS: A total of 52 patients (33 females and 19 males with a mean age of 53.59±11.34 years) with subacromial impingement syndrome were included. The patients were randoml...

  18. Spatial light modulation in compound semiconductor materials

    Science.gov (United States)

    Cheng, Li-Jen (Inventor); Gheen, Gregory O. (Inventor); Partovi, Afshin (Inventor)

    1990-01-01

    Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

  19. Low temperature transport in p-doped InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, S.; Jespersen, T. S.; Madsen, M. H.; Krogstrup, P.; Nygård, J. [Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

    2013-10-14

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

  20. System testing for a high speed 1024 channel transient digitizer system

    International Nuclear Information System (INIS)

    A test system for a 1024 channel high speed (500MHz) transient digitizer system is described. Each channel consists of a 128 element gallium arsenide charge coupled device which is read out (at 32MHz) into a FASTBUS module incorporating a custom gate array for data compaction. The transient digitizer is designed for use in Experiment 787 at Brookhaven National Laboratory. Results are presented from both prototype and production testing. (author). 4 refs., 6 figs

  1. Textural, mineralogical and stable isotope studies of hydrothermal alteration in the main sulfide zone of the Great Dyke, Zimbabwe and the precious metals zone of the Sonju Lake Intrusion, Minnesota, USA

    Science.gov (United States)

    Li, C.; Ripley, E.M.; Oberthur, T.; Miller, J.D., Jr.; Joslin, G.D.

    2008-01-01

    Stratigraphic offsets in the peak concentrations of platinum-group elements (PGE) and base-metal sulfides in the main sulfide zone of the Great Dyke and the precious metals zone of the Sonju Lake Intrusion have, in part, been attributed to the interaction between magmatic PGE-bearing base-metal sulfide assemblages and hydrothermal fluids. In this paper, we provide mineralogical and textural evidence that indicates alteration of base-metal sulfides and mobilization of metals and S during hydrothermal alteration in both mineralized intrusions. Stable isotopic data suggest that the fluids involved in the alteration were of magmatic origin in the Great Dyke but that a meteoric water component was involved in the alteration of the Sonju Lake Intrusion. The strong spatial association of platinum-group minerals, principally Pt and Pd sulfides, arsenides, and tellurides, with base-metal sulfide assemblages in the main sulfide zone of the Great Dyke is consistent with residual enrichment of Pt and Pd during hydrothermal alteration. However, such an interpretation is more tenuous for the precious metals zone of the Sonju Lake Intrusion where important Pt and Pd arsenides and antimonides occur as inclusions within individual plagioclase crystals and within alteration assemblages that are free of base-metal sulfides. Our observations suggest that Pt and Pd tellurides, antimonides, and arsenides may form during both magmatic crystallization and subsolidus hydrothermal alteration. Experimental studies of magmatic crystallization and hydrothermal transport/deposition in systems involving arsenides, tellurides, antimonides, and base metal sulfides are needed to better understand the relative importance of magmatic and hydrothermal processes in controlling the distribution of PGE in mineralized layered intrusions of this type. ?? Springer-Verlag 2007.

  2. High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

    OpenAIRE

    Gilfert, Christian Jürgen

    2012-01-01

    The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results p...

  3. Integrated Semiconductor Optical Sensors for Chronic, Minimally-Invasive Imaging of Brain Function

    OpenAIRE

    Lee, Thomas T.; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P.; Smith, Stephen J; Shenoy, Krishna V.; Harris, James S.

    2006-01-01

    Intrinsic Optical Signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve syst...

  4. Photocurrent response of B12As2 crystals to blue light, and its temperature- dependent electrical characterizations

    OpenAIRE

    R. Gul; CUI, Y.; A. E. Bolotnikov; Camarda, G.S.; S. U. Egarievwe; Hossain, A.; U. N. Roy; G. Yang; Edgar, J. H.; U. Nwagwu; James, R. B.

    2016-01-01

    With the global shortage of 3He gas, researchers worldwide are looking for alternative materials for detecting neutrons. Among the candidate materials, semiconductors are attractive because of their light weight and ease in handling. Currently, we are looking into the suitability of boron arsenide (B12As2) for this specific application. As the first step in evaluating the material qualitatively, the photo-response of B12As2 bulk crystals to light with different wavelengths was examined. The ...

  5. EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OF GaAs IN A VERTICAL CVD REACTOR

    OpenAIRE

    JAE-SANG BAEK; JIN-HYO BOO; YOUN-JEA KIM

    2008-01-01

    A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide (GaAs) from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The ...

  6. On-Chip Picosecond Pulse Detection and Generation Using Graphene Photoconductive Switches

    OpenAIRE

    Hunter, Nicholas; Mayorov, Alexander S.; Christopher D. Wood; Russell, Christopher; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles; Cunningham, John E.

    2015-01-01

    We report on the use of graphene for room temperature on-chip detection and generation of pulsed terahertz (THz) frequency radiation, exploiting the fast carrier dynamics of light-generated hot carriers, and compare our results with conventional low-temperature-grown gallium arsenide (LT-GaAs) photoconductive (PC) switches. Coupling of picosecond-duration pulses from a biased graphene PC switch into Goubau line waveguides is also demonstrated. A Drude transport model based on the transient ph...

  7. Low power laser irradiation does not affect the generation of signals in a sensory receptor

    Energy Technology Data Exchange (ETDEWEB)

    Lundeberg, T.; Zhou, J.

    1989-01-01

    The effect of low power Helium-Neon (He-Ne) and Gallium-Arsenide (Ga-As) laser on the slowly adapting crustacean stretch receptor was studied. The results showed that low power laser irradiation did not affect the membrane potential of the stretch receptor. These results are discussed in relation to the use of low power laser irradiation on the skin overlaying acupuncture points in treatment of pain syndrome.

  8. Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

    Science.gov (United States)

    1984-01-01

    The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

  9. Heat load of a GaAs photocathode in an SRF electron gun

    Institute of Scientific and Technical Information of China (English)

    WANG Er-Dong; ZHAO Kui; J(o)rg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; WU Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

    2011-01-01

    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs.

  10. Minor Actinide Burning in Thermal Reactors. A Report by the Working Party on Scientific Issues of Reactor Systems

    International Nuclear Information System (INIS)

    The actinides (or actinoids) are those elements in the periodic table from actinium upwards. Uranium (U) and plutonium (Pu) are two of the principal elements in nuclear fuel that could be classed as major actinides. The minor actinides are normally taken to be the triad of neptunium (Np), americium (Am) and curium (Cm). The combined masses of the remaining actinides (i.e. actinium, thorium, protactinium, berkelium, californium, einsteinium and fermium) are small enough to be regarded as very minor trace contaminants in nuclear fuel. Those elements above uranium in the periodic table are known collectively as the transuranics (TRUs). The operation of a nuclear reactor produces large quantities of irradiated fuel (sometimes referred to as spent fuel), which is either stored prior to eventual deep geological disposal or reprocessed to enable actinide recycling. A modern light water reactor (LWR) of 1 GWe capacity will typically discharge about 20-25 tonnes of irradiated fuel per year of operation. About 93-94% of the mass of uranium oxide irradiated fuel is comprised of uranium (mostly 238U), with about 4-5% fission products and ∼1% plutonium. About 0.1-0.2% of the mass is comprised of neptunium, americium and curium. These latter elements accumulate in nuclear fuel because of neutron captures, and they contribute significantly to decay heat loading and neutron output, as well as to the overall radio-toxic hazard of spent fuel. Although the total minor actinide mass is relatively small - approximately 20-25 kg per year from a 1 GWe LWR - it has a disproportionate impact on spent fuel disposal, and thus the longstanding interest in transmuting these actinides either by fission (to fission products) or neutron capture in order to reduce their impact on the back end of the fuel cycle. The combined masses of the trace actinides actinium, thorium, protactinium, berkelium and californium in irradiated LWR fuel are only about 2 parts per billion, which is far too low for

  11. Radiological safety considerations in the design and operation of the Oak Ridge National Laboratory Transuranium Research Laboratory (TRL)

    International Nuclear Information System (INIS)

    The Transuranium Research Laboratory (TRL) is the central facility at Oak Ridge National Laboratory (ORNL) for chemical and physical research involving transuranium elements. Transuranium Research Laboratory investigations are about equally divided between studies of inorganic and structural chemistry of the heavy elements and nuclear structure and properties of their isotopes. Elements studied include neptunium, plutonium, americium, curium, berkelium, californium, and einsteinium, each in microgram-to-gram quantities depending upon availability and experimental requirements. This paper describes an eight-step safety procedure that is followed in planning and approving individual research projects. This procedure should provide an ''optimum margin of safety'' and should permit the accomplishment of successful research. Steps in the procedure are as follows: (1) Evaluate the external and internal exposure radioactivity hazards. (2) Establish any concurrent conventional industrial safety risks that may be encountered in the operation. (3) Consider, in the proper perspective, the potential consequences of possible interactions of radioactivity risks with associated industrial safety risks and problems, applying the concepts of credibility and probability. (4) Design equipment, develop operating procedures, and ensure the proficiency of operating personnel to provide necessary safeguards to accomplish programme objectives with minimum risks and minimum operational constraints. (5) Ensure that necessary safeguards are, in fact, incorporated in equipment and procedures before actual work is begun. (6) Ensure that appropriate monitoring instrumentation, surveillance, and other necessary protective technical and craft support are available and are used during operation. (7) Make certain that appropriate measures exist to manage credible radiation accidents and other emergencies properly. (8) Inform others, in sufficient detail, of the success or deficiency of design

  12. Radiochemical studies of neutron deficient actinide isotopes

    International Nuclear Information System (INIS)

    The production of neutron deficient actinide isotopes in heavy ion reactions was studied using alpha, gamma, x-ray, and spontaneous fission detection systems. A new isotope of berkelium, 242Bk, was produced with a cross-section of approximately 10 μb in reactions of boron on uranium and nitrogen on thorium. It decays by electron capture with a half-life of 7.0 +- 1.3 minutes. The alpha-branching ratio for this isotope is less than 1% and the spontaneous fission ratio is less than 0.03%. Studies of (Heavy Ion, pxn) and (Heavy Ion, αxn) transfer reactions in comparison with (Heavy ion, xn) compound nucleus reactions revealed transfer reaction cross-sections equal to or greater than the compound nucleus yields. The data show that in some cases the yield of an isotope produced via a (H.I.,pxn) or (H.I.,αxn) reaction may be higher than its production via an xn compound nucleus reaction. These results have dire consequences for proponents of the ''Z1 + Z2 = Z/sub 1+2/'' philosophy. It is no longer acceptable to assume that (H.I.,pxn) and (H.I.,αxn) product yields are of no consequence when studying compound nucleus reactions. No evidence for spontaneous fission decay of 228Pu, 230Pu, 232Cm, or 238Cf was observed indicating that strictly empirical extrapolations of spontaneous fission half-life data is inadequate for predictions of half-lives for unknown neutron deficient actinide isotopes

  13. Transuranium Processing Plant semiannual report of production, status, and plans for period ending December 31, 1975

    Energy Technology Data Exchange (ETDEWEB)

    King, L.J.; Bigelow, J.E.; Collins, E.D.

    1976-10-01

    Between July 1, 1975, and December 31, 1975, maintenance was conducted at TRU for a period of three months, 295 g of curium oxide (enough for approximately 26 HFIR targets) were prepared, 100 mg of high-purity /sup 248/Cm, were separated from /sup 252/Cf that had been purified during earlier periods, 11 HFIR targets were fabricated, and 28 product shipments were made. No changes were made in the chemical processing flowsheets normally used at TRU during this report period. However, three equipment racks were replaced (with two new racks) during this time. In Cubicle 6, the equipment replaced was that used to decontaminate the transplutonium elements from rare earth fission products and to separate curium from the heavier elements by means of the LiCl-based anion-exchange process. In Cubicle 5, the equipment used to separate the transcurium elements by high-pressure ion exchange and to purify berkelium by batch solvent extraction was replaced. Two neutron sources were fabricated, bringing the total fabricated to 79. One source that had been used in a completed project was returned to the TRU inventory and is available for reissue. Three sources, for which no further use was foreseen, were processed to isolate and recover the ingrown /sup 248/Cm and the residual /sup 252/Cf. Eight pellets, each containing 100 ..mu..g of high-purity /sup 248/Cm were prepared for irradiation in HFIR to study the production of /sup 250/Cm. The values currently being used for transuranium element decay data and for cross-section data in planning irradiation-processing cycles, calculating production forecasts, and assaying products are tabulated.

  14. Radiochemical studies of neutron deficient actinide isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Williams, K.E.

    1978-04-01

    The production of neutron deficient actinide isotopes in heavy ion reactions was studied using alpha, gamma, x-ray, and spontaneous fission detection systems. A new isotope of berkelium, /sup 242/Bk, was produced with a cross-section of approximately 10 ..mu..b in reactions of boron on uranium and nitrogen on thorium. It decays by electron capture with a half-life of 7.0 +- 1.3 minutes. The alpha-branching ratio for this isotope is less than 1% and the spontaneous fission ratio is less than 0.03%. Studies of (Heavy Ion, pxn) and (Heavy Ion, ..cap alpha..xn) transfer reactions in comparison with (Heavy ion, xn) compound nucleus reactions revealed transfer reaction cross-sections equal to or greater than the compound nucleus yields. The data show that in some cases the yield of an isotope produced via a (H.I.,pxn) or (H.I.,..cap alpha..xn) reaction may be higher than its production via an xn compound nucleus reaction. These results have dire consequences for proponents of the ''Z/sub 1/ + Z/sub 2/ = Z/sub 1+2/'' philosophy. It is no longer acceptable to assume that (H.I.,pxn) and (H.I.,..cap alpha..xn) product yields are of no consequence when studying compound nucleus reactions. No evidence for spontaneous fission decay of /sup 228/Pu, /sup 230/Pu, /sup 232/Cm, or /sup 238/Cf was observed indicating that strictly empirical extrapolations of spontaneous fission half-life data is inadequate for predictions of half-lives for unknown neutron deficient actinide isotopes.

  15. Paul Scherrer Institute Scientific Report 1999. Volume I: Particles and Matter

    Energy Technology Data Exchange (ETDEWEB)

    Gobrecht, J.; Gaeggeler, H.; Herlach, D.; Junker, K.; Kettle, P.-R.; Kubik, P.; Zehnder, A. [eds.

    2000-07-01

    lthough originally planned for fundamental research in nuclear physics, the particle beams of pions, muons, protons and neutrons are now used in a large variety of disciplines in both natural science and medicine. The beams at PSI have the world's highest intensities and therefore allow certain experiments to be performed, which would not be possible elsewhere. The highlight of research this year was the first-ever determination of the chemical properties of the superheavy element {sup 107} Bohrium. This was undertaken, by an international team led by H. Gaeggeler of PSI's Laboratory for Radiochemistry. Bohrium was produced by bombarding a Berkelium target with Neon ions from the Injector I cyclotron and six atoms were detected after having passed through an online gas chromatography device. At the Laboratory for Particle Physics the focus has shifted from nuclear physics to elementary particle physics with about a fifty-fifty split between investigations of rare processes or particle decays using the high intensity muon, pion and recently also polarized neutron beams of PSI, and research at the highest energy frontier at CERN (Geneva) and DESY (Hamburg). Important space instrumentation has been contributed by the Laboratory for Astrophysics to the European Space Agency and NASA satellite programmes. The Laboratory for Micro and Nanotechnology continued to focus on research into molecular nanotechnology and SiGeC nanostructures, the latter with the aim of producing silicon based optoelectronics. Progress in 1999 in these topical areas is described in this report. A list of scientific publications in 1999 is also provided.

  16. Actinide production in the reaction of heavy ions with curium-248

    International Nuclear Information System (INIS)

    Chemical experiments were performed to examine the usefulness of heavy ion transfer reactions in producing new, neutron-rich actinide nuclides. A general quasi-elastic to deep-inelastic mechanism is proposed, and the utility of this method as opposed to other methods (e.g. complete fusion) is discussed. The relative merits of various techniques of actinide target synthesis are discussed. A description is given of a target system designed to remove the large amounts of heat generated by the passage of a heavy ion beam through matter, thereby maximizing the beam intensity which can be safely used in an experiment. Also described is a general separation scheme for the actinide elements from protactinium (Z=91) to mendelevium (Z=101), and fast specific procedures for plutonium, americium and berkelium. The cross sections for the production of several nuclides from the bombardment of 248Cm with 18O, 86Kr and 136Xe projectiles at several energies near and below the Coulomb barrier were determined. The results are compared with yields from 48Ca and 238U bombardments of 248Cm. Simple extrapolation of the product yields into unknown regions of charge and mass indicates that the use of heavy ion transfer reactions to produce new, neutron-rich above-target species is limited. The substantial production of neutron-rich below-target species, however, indicates that with very heavy ions like 136Xe and 238U the new species 248Am, 249Am and 247Pu should be produced with large cross sections from a 248Cm target. A preliminary, unsuccessful attempt to isolate 247Pu is outlined. The failure is probably due to the half life of the decay, which is calculated to be less than 3 minutes. The absolute gamma ray intensities from 251Bk decay, necessary for calculating the 251Bk cross section, are also determined

  17. Medical Applications and Toxicities of Gallium Compounds

    Directory of Open Access Journals (Sweden)

    Christopher R. Chitambar

    2010-05-01

    Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

  18. The origin of the Avram Iancu U-Ni-Co-Bi-As mineralization, Băiţa (Bihor) metallogenic district, Bihor Mts., Romania

    Science.gov (United States)

    Zajzon, Norbert; Szentpéteri, Krisztián; Szakáll, Sándor; Kristály, Ferenc

    2015-10-01

    The Băiţa metallogenic district in the Bihor Mountains is a historically important mining area in Romania. Uranium mining took place between 1952 and 1998 from various deposits, but very little is known about the geology and mineralogy of these deposits. In this paper, we describe geology and mineralogy of uranium mineralization of the Avram Iancu uranium mine from waste dump samples collected before complete remediation of the site. Texturally and mineralogically complex assemblages of nickeline, cobaltite-gersdorffite solid solution, native Bi, Bi-sulfosalts, molybdenite, and pyrite-chalcopyrite-sphalerite occur with uraninite, "pitchblende," and brannerite in most of the ore samples. The association of nickel, cobalt, and arsenic with uranium is reminiscent of five-element association of vein type U-Ni-Co-Bi-As deposits; however, the Avram Iancu ores appear to be more replacement-type stratiform/stratabound. Avram Iancu ore samples contain multistage complex, skarn, uranium sulfide, arsenide assemblages that can be interpreted to have been formed in the retrograde cooling stages of the skarn hydrothermal system. This mineralizing system may have built-up along Upper Cretaceous-Paleogene "Banatite" intrusions of diorite-to-granite composition. The intrusions crosscut the underlying uraniferous Permian formations in the stacked NW-verging Biharia Nappe System. The mineralization forms stacked, multilayer replacement horizons, along carbonate-rich lithologies within the metavolcanic (tuffaceous) Muncel Series. Mineral paragenesis and some mineral chemistry suggest moderate-to-high solid solutions associated with minute but abundant uranium minerals. Within the later arsenide-sulfarsenide mineral assemblage, there is great variation in Ni, Co, and S content with generally increasing arsenic content. Uranium minerals in this late-stage assemblage include very fine euhedral uraninite and brannerite inclusions in arsenide-sulfarsenide minerals. Native bismuth and Bi

  19. Nonlinear THz spectroscopy on n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gaal, Peter

    2008-06-23

    In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

  20. Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Máca, František; Kudrnovský, Josef; Makarovský, O.; Eaves, L.; Campion, R. P.; Edmonds, K. W.; Rushforth, A.W.; Foxon, C. T.; Gallagher, B. L.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 105, č. 22 (2010), 227202/1-227202/4. ISSN 0031-9007 R&D Projects: GA ČR GA202/07/0456; GA MŠk LC510; GA AV ČR KAN400100652 Grant ostatní: EU FP7(XE) #215368; EU FP7 NAMASTE(XE) No.214499 Institutional research plan: CEZ:AV0Z10100520 Keywords : gallium arsenide * semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  1. Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation

    CERN Document Server

    Castaldini, A; Polenta, L; Canali, C; Nava, F

    1999-01-01

    The effect of irradiation on semi-insulating gallium arsenide Schottky diodes has been investigated by means of surface potential measurements and spectroscopic techniques. Before and after irradiation the electric field exhibits a Mott barrier-like distribution, and the box-shaped space charge modifies its distribution with irradiation. The increase in density or the generation of some traps changes the compensation ratio producing a deeper active region and a more homogeneous distribution of the electric field. The latter phenomenon is also observed by EBIC images of edge-mounted diodes.

  2. Ab-initio study of the electronic structure of sup 1 sup 9 F implanted in GaAs and GaN crystals

    CERN Document Server

    Park, J H; Cho, H S; Shin, Y N

    1998-01-01

    We have studied the nuclear quadrupole interaction of a fluorine atom implanted in gallium arsenide and gallium nitride cluster models using the ab-initio Hartree-Fock theory. For the three possible fluorine sites in GaAs and GaN, we have determined the location of the implanted fluorine atom by using a self-consistent calculation, the electric field gradient at the implanted atom, and the electronic structure. Good agreement is found with experimental data wherever they are available. Predictions are made for the implanted fluorine site associated with the total energy and the electric field gradient which are expected to be measurable by a variety of experimental techniques.

  3. Studies of the phase transitions in UAs with neutron scattering

    International Nuclear Information System (INIS)

    Uranium arsenide is known to order with the type-I antiferromagnetic (AF) structure at approx. 126 K, and exhibit a first-order transition to the type-IA AF structure at T/sub N//2. We have now reexamined these transitions with a single crystal. Above T/sub N/ UAs exhibits critical scattering suggesting a tendency to order with an incommensurate wavevector, but then suddenly orders with the AF-I structure. The analysis of the data shows the need to consider anisotropic exchange interactions of cubic symmetry between U moments

  4. Tunable Cobalt Vacancies and Related Properties in LaCoxAs2

    OpenAIRE

    Shen, Shijie; Wang, Gang; Jin, Shifeng; Huang, Qingzhen; Ying, Tianping; Dandan LI; Lai, Xiaofang; Zhou, Tingting; Zhang, Han; Lin, Zhiping; Wu, Xiaozhi; Chen, Xiaolong

    2014-01-01

    The origin of transition metal vacancies and their effects on the properties of ThCr2Si2-type compounds have been less studied and poorly understood. Here we carefully investigate the structure, physical properties, and electronic structure for a series of lanthanum cobalt arsenides with nominal composition of LaCoxAs2 (1.6 < = x < = 2.1). It is revealed that the occupancy of Co can be tuned between 1.98(1) and 1.61(1). The structural analyses based on X-ray and neutron diffractions show the ...

  5. Study of the background noise in microwave GaAsFET devices

    International Nuclear Information System (INIS)

    One of the most important properties of the gallium arsenide field effect transistor is its low noise figure in the microwave frequency range (approx. 1 dB, 4 GHz). The applications of this device in components and systems in the high frequency range require analysis of background noise in terms of basic static and dynamic properties of the device. The purpose of this paper is to review GaAsFET noise properties; from this review, a description of precise noise measurement techniques is made. Some experimental and theoretical results on the minimum noise figure are shown for several GaAsFET devices. (author)

  6. STUDY ON OCCURENCE FORM OF PLATINUM IN XINJIE Cu—Pt DEPOSIT BY NAA AND SCANNING PROTON MICROPROBE

    Institute of Scientific and Technical Information of China (English)

    李晓林; 童纯菡; 等

    1995-01-01

    A combination of NAA and micro-PIXE was used to study concentrations and distributions of platinum group elements (PGE) in ores from Xinjie Cu-Pt deposit.The NAA results of the bulk indicate that the ores belong to the enriched Pt-Pd type.The element concentration maps of scanning micro-PIXE for the ores show that the occurence form of Pt is independent arsenide minerals.No PGE were detected in chalcopyrite of Xinjie Cu-Pt deposit.These information are economically beneficial to the mineral smelting process.

  7. Cell Libraries

    Science.gov (United States)

    1994-01-01

    A NASA contract led to the development of faster and more energy efficient semiconductor materials for digital integrated circuits. Gallium arsenide (GaAs) conducts electrons 4-6 times faster than silicon and uses less power at frequencies above 100-150 megahertz. However, the material is expensive, brittle, fragile and has lacked computer automated engineering tools to solve this problem. Systems & Processes Engineering Corporation (SPEC) developed a series of GaAs cell libraries for cell layout, design rule checking, logic synthesis, placement and routing, simulation and chip assembly. The system is marketed by Compare Design Automation.

  8. Surface Patterning and Nanowire Biosensor Construction

    DEFF Research Database (Denmark)

    Iversen, Lars

    2008-01-01

    submicron feature sizes, varying linearly in size with laser power and irradiation time. In Part II - “Nanoscale Biosensors” - Indium Arsenide (InAs) nanowires (NW) incorporated in field effect transistor (FET) devices provide a sensitive platform for detection of charged analyte species binding to the NW...... surface. A central limitation to this biosensor principle is the screening of analyte charge by mobile ions in electrolytes with physiological ionic strength. To overcome this problem, we propose to use as capture agents proteins which undergo large conformational changes. Using structure based protein...

  9. Radiation tests of semiconductor detectors

    OpenAIRE

    Chmill, Valery

    2006-01-01

    This thesis investigates the response of Gallium Arsenide (GaAs) detectors to ionizing irradiation. Detectors based on π-υ junction formed by deep level centers doping. The detectors have been irradiated with 137Cs γ-rays up to 110 kGy, with 6 MeV mean energy neutron up to approximately 6 · 1014 n/cm2, with protons and mixed beam up to 1015 p/cm2. Results are presented for the effects on leakage currents and charge collection efficiencies for minimum ionizing electrons and alpha particles. Th...

  10. Heterogeneously integrated optical detection platform for on-chip sensing applications

    Science.gov (United States)

    Chaudhuri, Ritesh Ray; Song, Youngsik; Seo, Sang-Woo

    2015-10-01

    This paper introduces a resonant waveguide grating (RWG) integrated with a photodetector for on-chip sensing applications. An inverted thin film indium gallium arsenide (InGaAs) metal-semiconductor-metal photodetector is heterogeneously integrated on silicon dioxide (SiO2)/ silicon substrate using fluidic self-assembly. The inverted optical waveguide and the RWG structure are subsequently fabricated utilizing layer-by-layer post-processing techniques. Detailed electrical, optical, and optoelectronic characterization were performed to analyze the functionality of the sensing platform. This approach can open new avenues allowing the development of low-cost complementary metal-oxide semiconductor compatible integrated optical sensors.

  11. Low-level laser therapy affects osseointegration in titanium implants: resonance frequency, removal torque, and histomorphometric analysis in rabbits

    OpenAIRE

    Kim, Jong-Ryoul; Kim, Sung-Hee; Kim, In-Ryoung; Park, Bong-Soo; Kim, Yong-Deok

    2016-01-01

    Objectives The purpose of this study was to investigate the effects of low-level laser therapy (LLLT) with a diode gallium-aluminum-arsenide (Ga-Al-As) low-level laser device on the healing and attachment of titanium implants in bone. Materials and Methods Thirteen New Zealand white male rabbits weighing 3.0±0.5 kg were used for this study. Dental titanium implants (3.75 mm in diameter and 8.5 mm in length, US II RBM plus fixture; Osstem, Seoul, Korea) were implanted into both femurs of each ...

  12. Semiconductor Nanomembranes for Quantum Photonics: Quantum Light Sources and Optomechanics

    DEFF Research Database (Denmark)

    Liu, Jin

    optomechanical nanomembranes for cavity cooling experiments. For PC cavities, several important processes have been extensively optimized such as the inductively coupled plasma (ICP) dry etch, the release of the membranes and the post-cleaning of the samples. GaAs optomechanical nanomembranes with a world......This thesis describes the fabrication and characterizations of semiconductor nanomembranes, i.e., gallium arsenide (GaAs) photonic crystal (PC) and optomechanical nanomemebranes. Processing techniques are developed and optimized in order to fabricate PC membranes for quantum light sources and...

  13. Site control technique for quantum dots using electron beam induced deposition

    Science.gov (United States)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-05-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  14. Photovoltaics and solar thermal conversion to electricity - Status and prospects

    Science.gov (United States)

    Alper, M. E.

    1979-01-01

    Photovoltaic power system technology development includes flat-plate silicon solar arrays and concentrating solar cell systems, which use silicon and other cell materials such as gallium arsenide. System designs and applications include small remote power systems ranging in size from tens of watts to tens of kilowatts, intermediate load-center applications ranging in size from tens to hundreds of kilowatts, and large central plant installations, as well as grid-connected rooftop applications. The thermal conversion program is concerned with large central power systems and small power applications.

  15. Modeling distributed feedback GaAs-based lasers in dentistry

    Science.gov (United States)

    Shih, Meng-Mu

    2012-01-01

    Distributed-feedback gallium-arsenide-based lasers with metal-gratings can generate stable wavelength at 980nm for applications in dentistry. This model uses the periodic optical waveguide method to calculate the coupling coefficient, which is a key parameter of laser performance. This model shows how the optical, geometrical, and material parameters depending on each other and how they affect the coupling coefficients in the laser waveguides. Numerical results compare the coupling coefficients of 980 nm lasers with those of 810 nm lasers. The modeling processes, including results, discussions, and physical interpretations, help to design and analyze lasers for more clinical and research applications in dentistry.

  16. Studies of III-V ferromagnetic semiconductors

    OpenAIRE

    Wang, Mu

    2012-01-01

    The III-V ferromagnetic semiconductor Gallium Manganese Arsenide ((Ga,Mn)As) is one of the most interesting and well studied materials in spintronics research area. The first chapter is a brief introduction to spintronics, the properties of (Ga,Mn)As and the growth technique molecular beam epitaxy (MBE). Then the thesis presents a detailed study of the effect on the Curie temperature (TC) of varying the growth conditions and post-growth annealing procedures for epitaxially grown (Ga,Mn)As ...

  17. On-chip terahertz Goubau-line waveguides with integrated photoconductive emitters and mode-discriminating detectors

    Science.gov (United States)

    Dazhang, L.; Cunningham, J.; Byrne, M. B.; Khanna, S.; Wood, C. D.; Burnett, A. D.; Ershad, S. M.; Linfield, E. H.; Davies, A. G.

    2009-08-01

    We have measured the picosecond time-domain response of Goubau-line waveguides, formed on quartz substrates, by integrating regions of low-temperature-grown gallium arsenide into the waveguides to act both as pulsed current emitters and detectors. Using one pair of photoconductive switches for excitation and a second pair for detection, pulsed signal propagation of a low dispersion electric field mode was demonstrated in the Goubau-lines, with the signal bandwidth extending beyond 800 GHz. Furthermore, it was demonstrated that terahertz bandstop filters can be integrated into a Goubau-line for removal of specific frequencies from the transmitted pulses.

  18. Growth and characterization of Cd3-xZnxAs2 undoped and Se-doped films

    International Nuclear Information System (INIS)

    For preparation of Cd3-xZnxAs2 films vapour condensation in vacuum as the one that is broadly applied to obtain films and epitaxial layer of semiconductors was chosen. The films have been grown and subsequently subjected to the evaporation of copper contact by means of vacuum evaporation system. The initial material was made of single crystals grown by the Bridgman method. Preliminary calculations of the evaporation flux density and the condensation of Cd3-xZnxAs2 alloys were made by the known equations for the pressures of zinc and cadmium arsenides saturated steam and sufficiently agree with experimentally obtained data.

  19. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  20. Errors in short circuit measurements due to spectral mismatch between sunlight and solar simulators

    Science.gov (United States)

    Curtis, H. B.

    1976-01-01

    Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

  1. Manifestation of the long-range action effect in ion-irradiated transistor structures based on GaAs

    International Nuclear Information System (INIS)

    The effect of ion irradiation on the parameters of the field transistors active layers with the Schottky barrier produced on the basis of the epitaxial gallium arsenide is studied. The transistors were irradiated by the argon ions with the energy of 90 eV with different doses and current densities. The change in the electron concentration and mobility is determined when current densities of argon ions are above 0.5 μA/cm2 and doses are above 5 x 1015 cm-2 . Besides, the more sharper profile of the electron concentration distribution is formed in the depth of the active layer near the interface boundary with the buffer

  2. Features of manifestation of the long-range action in As-Ga transistor structures under combined action by different mass ions

    International Nuclear Information System (INIS)

    Anomalous differences in measurements of distribution profiles of charge carriers concentration over the depth of active regions of arsenide-gallium structures after irradiation on the side of substrate by molecular hydrogen and argon ions, separately and in a combined sequence, were detected. The greatest effect of irradiation was observed in the structures with increase content of defects in the buffer layer. The results are explained by restructuring of impurity-defective complexes near interfaces induced by elastic waves appearing due to relaxation of displacement peaks in the area of ion braking

  3. Single and multiband THz Metamaterial Polarizers

    CERN Document Server

    Sangala, Bagvanth Reddy; Deshmukh, Prathmesh; Surdi, Harshad; Rana, Goutam; Gopal, Achanta Venu; Prabhu, S S

    2015-01-01

    We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. The dependence of the resonance frequency of the single band polarizer on the length of the cut-wires is explained based a transmission line model.

  4. An interim report on the NTS-2 solar cell experiment

    Science.gov (United States)

    Statler, R. L.; Walker, D. H.

    1979-01-01

    Data obtained from the fourteen solar cell modules on the NTS-2 satellite are presented together with a record of panel temperature and sun inclination. The following flight data are discussed: (1) state of the art solar cell configurations which embody improvements in solar cell efficiency through new silicon surface and bulk technology, (2) improved coverslip materials and coverslip bonding techniques, (3) short and long term effects of ultraviolet rejection filters vs. no filters on the cells, (4) degradation on a developmental type of liquid epitaxy gallium-aluminum-arsenide solar cell, and (5) space radiation effects.

  5. Infrared spectra of some sulfides and their analogs of binary composition in the long-wave region

    Science.gov (United States)

    Povarennykh, A. S.; Sidorenko, G. A.; Solntseva, L. S.; Solntsev, B. P.

    1981-01-01

    The far infrared spectra (500-60/cm) of some simple sulfides and their analogs were studied. In all, 22 minerals with different structure types were investigated, out of which 14 are sulfides (galena, alabandite, pyrrhotite, sphalerite, wurtzite, cinnabar, realgar, orpiment, getchelite antimonite, molybdenite, pyrite, marcasite and heazlewoodite) 6 arsenides (niccolite, domeykite, arsenopyrite, lollingite, rammelsbergite and skutterudite), one telluride (tetradymite) and native arsenic. The main bands of infrared absorption spectra of the minerals are compared with the relative strength of the interatomic bonds and their interpretation is given.

  6. Microwave monolithic integrated circuit development for future spaceborne phased array antennas

    Science.gov (United States)

    Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

    1984-01-01

    The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

  7. Displacement energy for various ions in particle detector materials

    CERN Document Server

    Chilingarov, A G; Meyer, J S; Sloan, T

    2000-01-01

    The total displacement energy or total non-ionising energy loss has been calculated for a variety of ions during their slowing down to rest in the detector materials carbon, silicon and gallium arsenide. The calculations, based on the theory of Lindhard et al., have been performed using a Monte Carlo method and a simple parameterisation of the results is presented. Such a parameterisation will simplify considerably the future computation of the differential non-ionising energy loss by fast particles in particle detectors.

  8. Photoelectrochemical decomposition of water utilizing monolithic tandem cells

    Energy Technology Data Exchange (ETDEWEB)

    Kocha, Shyam S.; Montgomery, Don; Peterson, Mark W.; Turner, John A. [National Renewable Energy Laboratory, Golden, CO (United States)

    1998-04-30

    Photovoltaic tandem cells consisting of a gallium indium phosphide (GaInP{sub 2}) homojunction grown epitaxially upon a gallium arsenide (GaAs) homojunction, with a GaAs tunnel-diode interconnection were utilized to photoelectrochemically decompose water in a 1 M sulfuric acid electrolyte solution. Using a sol-gel process, a platinum colloid in water was used to modify the illuminated front surface of the device to catalyze the water decomposition process. A unique feature of this device is that the hydrogen and oxygen are co-evolved from the illuminated surface. The exact mechanism of the water decomposition process is not fully understood at this time

  9. Study of the background noise in microwave GaAsFET devices

    Energy Technology Data Exchange (ETDEWEB)

    Serrano S, A. (Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, B.C. (Mexico))

    1984-01-01

    One of the most important properties of the gallium arsenide field effect transistor is its low noise figure in the microwave frequency range (approx. 1 dB, 4 GHz). The applications of this device in components and systems in the high frequency range require analysis of background noise in terms of basic static and dynamic properties of the device. The purpose of this paper is to review GaAsFET noise properties; from this review, a description of precise noise measurement techniques is made. Some experimental and theoretical results on the minimum noise figure are shown for several GaAsFET devices.

  10. Ordered arrangements of selective-area grown MnAs nanoclusters as components for novel, planar magneto-electronic devices

    OpenAIRE

    Fischer, Martin

    2015-01-01

    Novel concepts such as racetrack memory devices or planar logic elements based on ferromagnetic materials are subject of today’s research. However, there are certain limits which will have to be faced by the established technology. A very attractive model kit for planar magneto-electronic devices can be found in Manganese arsenide (MnAs ) nanoclusters grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). MnAs exposes ferromagnetism at room temperature and below, and the growt...

  11. Use of a semiconductor diode laser in urology

    Science.gov (United States)

    Watson, Graham M.; Anson, K.

    1993-05-01

    The gallium arsenide semiconductor laser at 805 nm has been used with a variety of delivery fibers to produce actions varying from incision to interstitial coagulation. Clinical experience at this early stage suggests that the laser can be used to cut skin and connective tissue efficiently in air. It may prove at least as effective as the neodymium YAG laser for interstitial coagulation of tumors or prostate. Further efforts are required to promote its action cutting underwater and as a coagulator both in air and water.

  12. New developments in the applications of proton beam writing

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Department of Physics, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Department of Physics, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Department of Physics, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Teo, E.J. [Centre for Ion Beam Applications, 2 Science Drive 3, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Breese, M.B.H. [Centre for Ion Beam Applications, 2 Science Drive 3, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Bettiol, A.A. [Centre for Ion Beam Applications, 2 Science Drive 3, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Blackwood, D.J. [Dept. of Materials Science, National Univ. of Singapore, Singapore 117542 (Singapore); Watt, F. [Centre for Ion Beam Applications, 2 Science Drive 3, Dept. of Physics, National Univ. of Singapore, Singapore 117542 (Singapore)

    2005-08-01

    This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below.

  13. New developments on the Surrey microbeam applications to lithography

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Grime, G.W. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Webb, R. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Jeynes, C. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Gwilliam, R. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Cansell, A. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Merchant, M. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Kirkby, K.J. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom)

    2005-04-01

    Investigations using MeV protons for lithography applications are being performed at the Ion Beam Centre of the University of Surrey, UK. High aspect ratio three dimensional structures have been produced by protons in gallium arsenide (GaAs) and Poly(methyl methacrylate) (PMMA). Structures produced in PMMA require significantly lower fluences than GaAs and behave positively to etching, whereas GaAs shows a negative behaviour. Variable fluence studies on GaAs show a transition from low to high aspect ratio three dimensional structures as the fluence increases.

  14. New developments in the applications of proton beam writing

    International Nuclear Information System (INIS)

    This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below

  15. New developments on the Surrey microbeam applications to lithography

    International Nuclear Information System (INIS)

    Investigations using MeV protons for lithography applications are being performed at the Ion Beam Centre of the University of Surrey, UK. High aspect ratio three dimensional structures have been produced by protons in gallium arsenide (GaAs) and Poly(methyl methacrylate) (PMMA). Structures produced in PMMA require significantly lower fluences than GaAs and behave positively to etching, whereas GaAs shows a negative behaviour. Variable fluence studies on GaAs show a transition from low to high aspect ratio three dimensional structures as the fluence increases

  16. Plating on difficult-to-plate metals: what's new

    International Nuclear Information System (INIS)

    Some of the changes since 1970 in procedures for plating on such materials as titanium, molybdenum, silicon, aluminum, and gallium arsenide are summarized. While basic procedures for plating some of these materials were developed as many as 30 to 40 years ago, changes in the end uses of the plated products have necessitated new plating processes. In some cases, vacuum techniques - such as ion bombardment, ion implantation, and vacuum metallization - have been introduced to improve the adhesion of electrodeposits. In other cases, these techniques have been used to deposit materials upon which electrodeposits are required

  17. Magnetic properties changes of MnAs thin films irradiated with highly charged ions

    OpenAIRE

    Trassinelli, Martino; Gafton, V.; Eddrief, Mahmoud; Eddrief, M.; Etgens, Victor H.; Etgens, V. H.; Hidki, S.; Lacaze, Emmanuelle; Lamour, Emily; Luo, X.; Marangolo, M.; Marangolo, Massimiliano; Merot, Jacques; Prigent, Christophe; Reuschl, Regina

    2013-01-01

    We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Preliminary results are presen...

  18. X-ray detection with GaAs RGCCDs

    CERN Document Server

    Passmore, S; Rogalla, M; Runge, K; Bryman, D; Cresswell, J

    1999-01-01

    Gallium-Arsenide Resistive-Gate CCDs with an active depth of up to 30 mu m were used to detect X-rays with energies between 14 and 60 keV. Five different X-ray sources were used to investigate the signal-to-noise ratio, energy resolution and linearity of the device. An energy resolution better than 11% at 60 keV was observed. The charge transport efficiency (CTE) of these 128 pixel CCDs was determined using two independent methods to be CTE>0.9992. (author)

  19. X-ray detection with GaAs RGCCDs

    Energy Technology Data Exchange (ETDEWEB)

    Passmore, S. E-mail: s.passmore@physics.gla.ac.uk; Ludwig, J.; Rogalla, M.; Runge, K.; Bryman, D.; Cresswell, J

    1999-09-11

    Gallium-Arsenide Resistive-Gate CCDs with an active depth of up to 30 {mu}m were used to detect X-rays with energies between 14 and 60 keV. Five different X-ray sources were used to investigate the signal-to-noise ratio, energy resolution and linearity of the device. An energy resolution better than 11% at 60 keV was observed. The charge transport efficiency (CTE) of these 128 pixel CCDs was determined using two independent methods to be CTE>0.9992. (author)

  20. Characterization of GaAlAs-GaAs solar cell in the system with fresnel lens

    International Nuclear Information System (INIS)

    The operation of gallium arsenide concentrator solar cell in the system with Fresnel lens is investigated. It is determined that efficiency of concentrating system strongly depends on the presence of an atmospheric steams. The obtained results show that the focusing ability of optical system decreases with the increases of dispersed component of solar radiation. This lowers short-circuit current and output power of the photo converter. The measured angular dependence of I/sub sc/ and U/sub oc/ of the concentrator module was utilized to optimize the operation of the Sun tracking system. (author)

  1. Development of a Fresnel lens concentrator for space application

    Science.gov (United States)

    Oneill, Mark J.; Piszczor, Michael F.

    1987-01-01

    The selected conceptual design of the dome lens photovoltaic concentrator for space applications uses a 3.7 cm square aperture dome lens to focus onto a 0.4 cm active diameter gallium arsenide cell. The selected configuration will provide 91.5 percent lens optical efficiency and 21.4 percent cell efficiency at 100 suns irradiance and 100 C cell temperature, for an overall cell efficiency of 19.6 percent. The selected configuration will tolerate 1 degree tracking errors with negligible loss of performance. The selected panel weight is 2.5 kg/sq.m.

  2. The mini-dome lens space concentrator array - Recent component test results and current array development status

    Science.gov (United States)

    O'Neill, M. J.; Mcdanal, A. J.; Perry, J. L.; Flood, D. J.; Piszczor, M. F.; Swartz, C. K.

    1989-01-01

    The development of a high-performance, lightweight space photovoltaic concentrator array is described. The array is the first space photovoltaic concentrator system to use a refractive optical concentrator in the form of a dome-shaped, point-focus, Fresnel lens. In addition, it is the first such concentrator system to utilize prismatic cell covers to eliminate gridline obscuration losses. By combining these array features with state-of-the-art gallium arsenide cell technology, array areal power values (in watts per square meter) well in excess of present space power system levels are anticipated. In addition, the array has the potential for extremely high specific power values (in watts per kilogram).

  3. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  4. Role of substrate quality on IC performance and yields

    Science.gov (United States)

    Thomas, R. N.

    1981-01-01

    The development of silicon and gallium arsenide crystal growth for the production of large diameter substrates are discussed. Large area substrates of significantly improved compositional purity, dopant distribution and structural perfection on a microscopic as well as macroscopic scale are important requirements. The exploratory use of magnetic fields to suppress convection effects in Czochralski crystal growth is addressed. The growth of large crystals in space appears impractical at present however the efforts to improve substrate quality could benefit from the experiences gained in smaller scale growth experiments conducted in the zero gravity environment of space.

  5. Synthese und Eigenschaften von Trimethylsilylarsanen (Trimethylsilylverbindungen der Vb-Elemente ; 1)

    OpenAIRE

    Becker, Gerd; Gutekunst, Gerhard; Wessely, Hans Jürgen

    1980-01-01

    Aus Natrium-Kalium-Legierung und pulverisiertem Arsen in Dimethoxyäthan dargestelltes „Na3As/K3As” setzt sich mit Trimethylchlorsilan in 80 bis 90%iger Ausbeute zu Tris(trimethylsilyl)arsan 4 um. 4 reagiert mit Methyllithium in THF oder Dimethoxyäthan zu Lithiumbis(trimethylsilyl)arsenid 5, das mit zwei Molekülen THF – 5a – oder einem Molekül Dimethoxyäthan – 5b – pro Formeleinheit kristallisiert. Das Dimethoxyäthan-Addukt ist dimer in Benzol. Die Umsetzung von 5 mit primären und sekundären A...

  6. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tanta, R.; Krogstrup, P.; Nygård, J.; Jespersen, T. S., E-mail: tsand@fys.ku.dk [Center for Quantum Devices and Nano Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100 (Denmark); Madsen, M. H. [Danish Fundamental Metrology, Matematiktorvet 307, Kgs. Lyngby 2800 (Denmark); Liao, Z.; Vosch, T. [Nano-Science Center, Department of Chemistry, University of Copenhagen, Copenhagen 2100 (Denmark)

    2015-12-14

    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  7. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    CERN Document Server

    Tanta, R; Liao, Z; Krogstrup, P; Vosch, T; Nygard, J; Jespersen, T S

    2016-01-01

    The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  8. Cameras Reveal Elements in the Short Wave Infrared

    Science.gov (United States)

    2010-01-01

    Goodrich ISR Systems Inc. (formerly Sensors Unlimited Inc.), based out of Princeton, New Jersey, received Small Business Innovation Research (SBIR) contracts from the Jet Propulsion Laboratory, Marshall Space Flight Center, Kennedy Space Center, Goddard Space Flight Center, Ames Research Center, Stennis Space Center, and Langley Research Center to assist in advancing and refining indium gallium arsenide imaging technology. Used on the Lunar Crater Observation and Sensing Satellite (LCROSS) mission in 2009 for imaging the short wave infrared wavelengths, the technology has dozens of applications in military, security and surveillance, machine vision, medical, spectroscopy, semiconductor inspection, instrumentation, thermography, and telecommunications.

  9. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  10. Comparative High Field Magneto-transport Of Rare Earth Oxypnictides With Maximum Transition Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Balakirev, Fedor F [Los Alamos National Laboratory; Migliori, A [MPA-NHMFL; Riggs, S [NHMFL-FSU; Hunte, F [NHMFL-FSU; Gurevich, A [NHMFL-FSU; Larbalestier, D [NHMFL-FSU; Boebinger, G [NHMFL-FSU; Jaroszynski, J [NHMFL-FSU; Ren, Z [CHINA; Lu, W [CHINA; Yang, J [CHINA; Shen, X [CHINA; Dong, X [CHINA; Zhao, Z [CHINA; Jin, R [ORNL; Sefat, A [ORNL; Mcguire, M [ORNL; Sales, B [ORNL; Christen, D [ORNL; Mandrus, D [ORNL

    2008-01-01

    We compare magnetotransport of the three iron-arsenide-based compounds ReFeAsO (Re=La, Sm, Nd) in very high DC and pulsed magnetic fields up to 45 and 54 T, respectively. Each sample studied exhibits a superconducting transition temperature near the maximum reported to date for that particular compound. While high magnetic fields do not suppress the superconducting state appreciably, the resistivity, Hall coefficient, and critical magnetic fields, taken together, suggest that the phenomenology and superconducting parameters of the oxypnictide superconductors bridges the gap between MgB{sub 2} and YBCO.

  11. Influence of Cr doping on the magnetic structure of the FeAs-strips compound CaFe4As3: A single-crystal neutron diffraction study

    Science.gov (United States)

    Manuel, P.; Chapon, L. C.; Trimarchi, G.; Todorov, I. S.; Chung, D. Y.; Ouladdiaf, B.; Gutmann, M. J.; Freeman, A. J.; Kanatzidis, M. G.

    2013-09-01

    We have studied the magnetic structure of a Cr-doped iron-arsenide compound CaFe4As3 by means of single crystal neutron diffraction. The neutron data reveal that below 90 K, an antiferromagnetic structure with propagation vector k=0 is adopted. Refinement of the magnetic structure using one of the modes allowed by symmetry analysis indicates that two of the four Fe sites, including the one where the selective substitution Fe/Cr happens, bear reduced magnetic moments. Density functional theory calculations confirm the stability of such a magnetic arrangement.

  12. Fabrication and characterization of high aspect ratio perpendicular patterned information storage media in an Al2O3/GaAs substrate

    OpenAIRE

    Wong, Joyce; Scherer, Axel; Todorovic, Mladen; Schultz, Sheldon

    1999-01-01

    In a new approach, we have fabricated 6:1 aspect ratio magnetic nanocolumns, 60–250 nm in diameter, embedded in a hard aluminum-oxide/gallium-arsenide (Al2O3/GaAs) substrate. The fabrication technique uses the highly selective etching properties of GaAs and AlAs, and highly efficient masking properties of Al2O3 to create small diameter, high aspect ratio holes. Nickel (Ni) is subsequently electroplated into the holes, followed by polishing, which creates a smooth and hard surface appropriate ...

  13. Laser-Ablated Ba(0.50)Sr(0.50)TiO3/LaAlO3 Films Analyzed Statistically for Microwave Applications

    Science.gov (United States)

    Romanofsky, Robert R.

    2003-01-01

    Scanning phased-array antennas represent a highly desirable solution for futuristic near-Earth and deep space communication scenarios requiring vibration-free, rapid beam steering and enhanced reliability. The current state-of-practice in scanning phased arrays is represented by gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) technology or ferrite phase shifters. Cost and weight are significant impediments to space applications. Moreover, conventional manifold-fed arrays suffer from beam-forming loss that places considerable burden on MMIC amplifiers. The inefficiency can result in severe thermal management problems.

  14. Effect of laser radiation on thymus hormones production

    International Nuclear Information System (INIS)

    Irradiation of the epithelial cells from human (cell line HTSC) by arsenid-gallium laser (0.89 nm, 1500 Hz) induces an enhancement of thymic hormone production. The concentration of α-1-thymosin was substantionally increased on the days 1 and 5 in culture after irradiation. The increase of thymulin level in cultural supernatants was less pronounced and displayed after irradiation during 3-4 minutes. Local laser irradiation of thymus region of rats (5 minutes, 10 times) induce the increase of serum concentration of α-1-thymosin and the decrease of serum level of thymulin 2 days after irradiation. 10 refs.; 2 figs

  15. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  16. An EXAFS spectrometer on beam line 10B at the Photon Factory

    International Nuclear Information System (INIS)

    An EXAFS spectrometer installed on the beam line 10B at the Photon Factory is designed to cover the photon energy between 4 and 30 keV. Utilizing either a channel-cut or two flat silicon crystals as a monochromator, a beam intensity between 108 and 109 photons/sec is obtained at 9 keV with a resolution of 1 eV. The performance of the spectrometer, such as a signal-to-noise ratio or an energy resolution is demonstrated with examples of K edge absorption spectra of bromine, germanium, gallium arsenide, and zinc selenide. (author)

  17. Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

    KAUST Repository

    Hussain, A.

    2010-06-17

    There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

  18. A W-band RF-MEMS switched LNA in a 70 nm mHEMT process

    OpenAIRE

    Reyaz, Shakila; Gustafsson, Andreas; Samuelsson, Carl; Malmqvist, Robert; Grandchamp, Brice; Rantakari, Pekka; Vaha-Heikkila, Tauno

    2015-01-01

    This work presents a monolithic integrated reconfigurable active circuit consisting of a W-band RF micro-electro-mechanical-systems (MEMS) Dicke switch network and a wideband low-noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF-MEMS LNA has a measured gain of 10.2-15.6 dB and 1.3-8.2 dB at 79-96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three-stage LNA used in this...

  19. Quantum interference and control of the dynamic Franz-Keldysh effect: Generation and detection of terahertz space-charge fields

    Science.gov (United States)

    Wang, Rui; Jacobs, Paul; Zhao, Hui; Smirl, Arthur L.

    2013-06-01

    The Dynamic Franz Keldysh Effect (DFKE) is produced and controlled in bulk gallium arsenide by quantum interference without the aid of externally applied fields and is spatially and temporally resolved using ellipsometric pump-probe techniques. The ˜3 THz internal driving field for the DFKE is a transient space-charge field that is associated with a critically damped coherent plasma oscillation produced by oppositely traveling ballistic electron and hole currents that are injected by two-color quantum interference techniques. The relative phase and polarization of the two pump pulses can be used to control the DFKE.

  20. Localized 3d states in spintronic materials - studies with use of synchrotron radiation

    International Nuclear Information System (INIS)

    Role of the open (partly occupied) d shells in solids containing transition metal atoms is of great importance. This shell contributes markedly to the valence band and determines the magnetic properties of the crystal. So, the properties of the system strongly depend on the relative strength of two competing factors: intra-shell correlation effects and interaction between d states and the electronic states of neighbouring atoms. In the paper, the investigations of an interesting example of such a compound - manganese arsenide - are presented

  1. Infrared and millimeter waves v.14 millimeter components and techniques, pt.V

    CERN Document Server

    Button, Kenneth J

    1985-01-01

    Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on vario

  2. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  3. Configuration dependence of band-gap narrowing and localization in dilute GaAs1 -xBix alloys

    Science.gov (United States)

    Bannow, Lars C.; Rubel, Oleg; Badescu, Stefan C.; Rosenow, Phil; Hader, Jörg; Moloney, Jerome V.; Tonner, Ralf; Koch, Stephan W.

    2016-05-01

    Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations (≤2 % ), in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band defect level anticrossing between As and Bi occupied p levels. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. In particular, we find that at high concentrations, the Bi-Bi interactions depend strongly on model periodic cluster configurations, which are not captured by tight-binding models. Averaging over various configurations supports the defect level broadening picture. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

  4. Hybrid solar collector using nonimaging optics and photovoltaic components

    Science.gov (United States)

    Winston, Roland; Yablonovitch, Eli; Jiang, Lun; Widyolar, Bennett K.; Abdelhamid, Mahmoud; Scranton, Gregg; Cygan, David; Kozlov, Alexandr

    2015-08-01

    The project team of University of California at Merced (UC-M), Gas Technology Institute, and Dr. Eli Yablonovitch of University of California at Berkeley developed a novel hybrid concentrated solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record single-junction Gallium arsenide (GaAs) PV components integrated with particle laden gas as thermal transfer and storage media, to simultaneously generate electricity and high temperature dispatchable heat. The collector transforms a parabolic trough, commonly used in CSP plants, into an integrated spectrum-splitting device. This places a spectrum-sensitive topping element on a secondary reflector that is registered to the thermal collection loop. The secondary reflector transmits higher energy photons for PV topping while diverting the remaining lower energy photons to the thermal media, achieving temperatures of around 400°C even under partial utilization of the solar spectrum. The collector uses the spectral selectivity property of Gallium arsenide (GaAs) cells to maximize the exergy output of the system, resulting in an estimated exergy efficiency of 48%. The thermal media is composed of fine particles of high melting point material in an inert gas that increases heat transfer and effectively stores excess heat in hot particles for later on-demand use.

  5. The quantum Hall effect branches out

    International Nuclear Information System (INIS)

    It is surprising when five theoretical papers all concerned with a single experimental result appear in the same journal. It is perhaps even more surprising when the topic is the quantum Hall effect - a phenomenon that is now over two decades old and has already yielded two Nobel prizes. The great excitement stems from the fact that this experiment and the new theories elegantly intertwine the quantum Hall effect with ferromagnetism, Bose condensation, superfluidity and the Josephson effect. Last year our group at the California Institute of Technology teamed up with Loren Pfeiffer and Ken West of Bell Labs to study how electrons tunnel between two parallel 2-D electron gases. These electrons reside in a semiconductor heterostructure consisting of two thin layers of gallium arsenide separated by a barrier layer of aluminium gallium arsenide. Surprisingly, we observed a huge enhancement in the tunnelling current when just the right magnetic field was applied perpendicular to the 2-D planes in which the electrons were confined (I B Spielman et al. 2000 Phys. Rev. Lett. 84 5808). In the June issue of Physics World, James P Eisenstein of the California Institute of Technology, USA, describes the experiment and explains where it may lead. (U.K.)

  6. Voltage adjusting characteristics in terahertz transmission through Fabry-Pérot-based metamaterials

    Directory of Open Access Journals (Sweden)

    Jun Luo

    2015-10-01

    Full Text Available Metallic electric split-ring resonators (SRRs with featured size in micrometer scale, which are connected by thin metal wires, are patterned to form a periodically distributed planar array. The arrayed metallic SRRs are fabricated on an n-doped gallium arsenide (n-GaAs layer grown directly over a semi-insulating gallium arsenide (SI-GaAs wafer. The patterned metal microstructures and n-GaAs layer construct a Schottky diode, which can support an external voltage applied to modify the device properties. The developed architectures present typical functional metamaterial characters, and thus is proposed to reveal voltage adjusting characteristics in the transmission of terahertz waves at normal incidence. We also demonstrate the terahertz transmission characteristics of the voltage controlled Fabry-Pérot-based metamaterial device, which is composed of arrayed metallic SRRs. To date, many metamaterials developed in earlier works have been used to regulate the transmission amplitude or phase at specific frequencies in terahertz wavelength range, which are mainly dominated by the inductance-capacitance (LC resonance mechanism. However, in our work, the external voltage controlled metamaterial device is developed, and the extraordinary transmission regulation characteristics based on both the Fabry-Pérot (FP resonance and relatively weak surface plasmon polariton (SPP resonance in 0.025-1.5 THz range, are presented. Our research therefore shows a potential application of the dual-mode-resonance-based metamaterial for improving terahertz transmission regulation.

  7. Strongly correlated electron phenomena in Pr-based filled skutterudite compounds

    International Nuclear Information System (INIS)

    Recent experiments on the Pr-based filled skutterudite arsenides and antimonides PrOs4Sb12, Pr(Os1-xRux)4Sb12, Pr1-xNdxOs4Sb12, PrFe4As12, PrRu4As12, and PrOs4As12 are reviewed. The heavy fermion compound PrOs4Sb12 exhibits unconventional strong-coupling superconductivity below Tc=1.85K that breaks time reversal symmetry, apparently consists of several distinct superconducting phases, and may involve triplet spin pairing of electrons. Studies of the alloy systems Pr(Os1-xRux)4Sb12 and Pr1-xNdxOs4Sb12 revealed rich T-x phase diagrams and a strong suppression of the high field ordered phase and the unconventional superconductivity of PrOs4Sb12 with Ru substitution. Among the three Pr-based filled skutterudite arsenides, PrFe4As12 has a ferromagnetic ground state, PrRu4As12 exhibits conventional BCS superconductivity, and PrOs4As12 is an antiferromagnet

  8. Strongly correlated electron phenomena in Pr-based filled skutterudite compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maple, M.B. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States)]. E-mail: mbmaple@physics.ucsd.edu; Henkie, Z. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland); Yuhasz, W.M. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Ho, P.-C. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Yanagisawa, T. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Sayles, T.A. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Butch, N.P. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Jeffries, J.R. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Pietraszko, A. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland)

    2007-03-15

    Recent experiments on the Pr-based filled skutterudite arsenides and antimonides PrOs{sub 4}Sb{sub 12}, Pr(Os{sub 1-x}Ru{sub x}){sub 4}Sb{sub 12}, Pr{sub 1-x}Nd{sub x}Os{sub 4}Sb{sub 12}, PrFe{sub 4}As{sub 12}, PrRu{sub 4}As{sub 12}, and PrOs{sub 4}As{sub 12} are reviewed. The heavy fermion compound PrOs{sub 4}Sb{sub 12} exhibits unconventional strong-coupling superconductivity below T{sub c}=1.85K that breaks time reversal symmetry, apparently consists of several distinct superconducting phases, and may involve triplet spin pairing of electrons. Studies of the alloy systems Pr(Os{sub 1-x}Ru{sub x}){sub 4}Sb{sub 12} and Pr{sub 1-x}Nd{sub x}Os{sub 4}Sb{sub 12} revealed rich T-x phase diagrams and a strong suppression of the high field ordered phase and the unconventional superconductivity of PrOs{sub 4}Sb{sub 12} with Ru substitution. Among the three Pr-based filled skutterudite arsenides, PrFe{sub 4}As{sub 12} has a ferromagnetic ground state, PrRu{sub 4}As{sub 12} exhibits conventional BCS superconductivity, and PrOs{sub 4}As{sub 12} is an antiferromagnet.

  9. Generalized Synthesis of EAs [E = Fe, Co, Mn, Cr] Nanostructures and Investigating Their Morphology Evolution

    Directory of Open Access Journals (Sweden)

    P. Desai

    2015-01-01

    Full Text Available This paper illustrates a novel route for the synthesis of nanostructured transition metal arsenides including those of FeAs, CoAs, MnAs, and CrAs through a generalized protocol. The key feature of the method is the use of one-step hot-injection and the clever use of a combination of precursors which are low-melting and highly reactive such as metal carbonyls and triphenylarsine in a solventless setup. This method also facilitates the formation of one-dimensional nanostructures as we move across the periodic table from CrAs to CoAs. The chemical basis of this reaction is simple redox chemistry between the transition metals, wherein the transition metal is oxidized from elemental state (E0 to E3+in lieu of reduction of As3+ to As3−. While the thermodynamic analysis reveals that all these conversions are spontaneous, it is the kinetics of the process that influences morphology of the product nanostructures, which varies from extremely small nanoparticles to nanorods. Transition metal pnictides show interesting magnetic properties and these nanostructures can serve as model systems for the exploration of their intricate magnetism as well as their applications and can also function as starting materials for the arsenide based nanosuperconductors.

  10. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  11. Heat load of a P-doped GaAs photocathode in SRF electron gun

    Energy Technology Data Exchange (ETDEWEB)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

    2010-05-23

    Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

  12. Design of Ceramic Springs for Use in Semiconductor Crystal Growth in Microgravity

    Science.gov (United States)

    Kaforey, M. F.; Deeb, C. W.; Matthiesen, D. H.

    1999-01-01

    Segregation studies can be done in microgravity to reduce buoyancy driven convection and investigate diffusion-controlled growth during the growth of semiconductor crystals. During these experiments, it is necessary to prevent free surface formation in order to avoid surface tension driven convection (Marangoni convection). Semiconductor materials such as gallium arsenide and germanium shrink upon melting, so a spring is necessary to reduce the volume of the growth chamber and prevent the formation of a free surface when the sample melts. A spring used in this application must be able to withstand both the high temperature and the processing atmosphere. During the growth of gallium arsenide crystals during the GTE Labs/USAF/NASA GaAs GAS Program and during the CWRU GaAs programs aboard the First and Second United States microgravity Laboratories, springs made of pyrolytic boron nitride (PBN) leaves were used. The mechanical properties of these PBN springs have been investigated and springs having spring constants ranging from 0.25 N/mm to 25 N/mm were measured. With this improved understanding comes the ability to design springs for more general applications, and guidelines are given for optimizing the design of PBN springs for crystal growth applications.

  13. T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

    Science.gov (United States)

    Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

    2004-01-01

    We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

  14. Rapid Progress of High Speed Short Haul Optical Interconnections in Optical Communication Systems

    Directory of Open Access Journals (Sweden)

    Ahmed Nabih Zaki Rashed

    2012-06-01

    Full Text Available This paper has proposed the new progress of optical interconnections is processed, taking into account the following items such as its ultimate device bandwidth, its available transmission bit rates based on either soliton or maximum time division multiplexing (MTDM transmission techniques, its ultimate transmission link bandwidth, and the product of the link bandwidth and its transmission length. Two items of special emphasis in the basic design of optical interconnection are: aluminum gallium arsenide (AlGaAs and Barium Fluoride (BaF2 waveguides, and the optical source cast as Vertical Cavity Surface Emitting Laser Diodes (VCSELD, made of either AlGaAs at operating wavelength of 0.85 µm or indium gallium arsenide phosphors (InGaAsP at operating wavelength of 0.65 µm, special emphasis is focused on the both above two items under different operating conditions including both the thermal and electrical effects. The optical interconnect is built up on the bases of two VCSELD and one optical link where thermal effects of both diodes and links are included. The good performance of the optical interconnect is deeply and parametrically investigated under wide ranges of the affecting parameters. The high speed performance is processed through three different effects, namely the device 3-dB bandwidth, and the link dispersion characteristics.

  15. “The Thermal Wave” in Technology of Crystal Growth from the Melt

    Directory of Open Access Journals (Sweden)

    V.G. Kosushkin

    2013-12-01

    Full Text Available It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method. To reduce the heterogeneity of the layered method is proposed to reduce temperature fluctuations in the melt through the creation of artificial heat wave formed by the modulation of the heater temperature setting of growing single crystals. This paper describes the experimental technique to measure the temperature directly in the field of crystal growth of gallium arsenide from the melt. We investigated the possibility of special control actions for decreasing the temperature fluctuations at the crystallization front. These actions relate to the modification of the thermal and kinetic control parameters normally used in the Czochralski method of crystal growth, such as heater temperature, as well as crystal and crucible rotation rates. Unsteady low energetic thermal control actions (thermal waves, induced by periodic changes of the heater temperature are able to eliminate temperature fluctuations near the crystal / melt interface and may be a potential tool for the growth of striation-free gallium arsenide single crystals.

  16. Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET Based on Novel Channel Materials

    Directory of Open Access Journals (Sweden)

    Rakesh Prasher

    2013-03-01

    Full Text Available In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS, drain induced barrier lowering (DIBL, on and off current, carrier injection velocity (vinj, etc. The channel materials studied are Silicon (Si, Germanium (Ge, Gallium Arsenide (GaAs, Zinc Oxide (ZnO, Zinc Sulfide (ZnS, Indium Arsenide (InAs, Indium Phosphide (InP and Indium Antimonide (InSb. The results suggest that InSb and InAs materials have highest Ion and lowest Ioff values when used in the channel of the proposed MOSFET. Besides, InSb has the highest values for Ion / Ioff ratio, vinj, transconductance (gm and improved short channel effects (SS = 59.71 and DIBL = 1.14, both are very close to ideal values. More results such as effect of quantum capacitance verses gate voltage (Vgs, drain current (Ids vs. gate voltage and drain voltage (Vds, ratio of transconductance (gm and drain current (Id vs. gate voltage, average velocity vs. gate voltage and injection velocity (Vinj for the mentioned channel materials have been investigated. Various results obtained indicate that InSb and InAs as channel material appear to be suitable for high performance logic and even low operating power requirements for future nanoscale devices as suggested by latest ITRS reports.

  17. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  18. Scanning near-field infrared microscopy on semiconductor structures

    International Nuclear Information System (INIS)

    literature. While the structures of the first system were in the micrometer regime, the capability to probe buried nanostructures is demonstrated at a sample of indium arsenide quantum dots. Those dots are covered by a thick layer of gallium arsenide. For the first time ever, it is shown experimentally that transitions between electron states in single quantum dots can be investigated by near-field microscopy. By monitoring the near-field response of these quantum dots while scanning the wavelength of the incident light beam, it was possible to obtain characteristic near-field signatures of single dots. Near-field contrasts up to 30 % could be measured for resonant excitation of electrons in the conduction band of the indium arsenide dots. (orig.)

  19. (CaFeAs)10PtzAs8 superconductors and related compounds

    International Nuclear Information System (INIS)

    The main topic of this dissertation is the identification of new compounds, structure determination, and substitution dependent investigation of properties in this new branch of the family of iron arsenide superconductors (Chapter 2). Chapter 2.1 presents the identification of the superconducting compounds and the corresponding structure elucidation identifying two dif-ferent species (CaFeAs)10Pt3As8 and (CaFeAs)10Pt4As8 in this family (abbreviated as 1038 and 1048 according to their stoichiometry). However, a closer look revealed a more challenging structure chemistry which is covered in Chapter 2.2. The following two Chapters 2.3 and 2.4 are devoted to (CaFeAs)10Pt3As8 and more detailed investigations on this parent compound of the new superconductor family. Furthermore, transition metal substitution series (CaFe1-xMxAs)10Pt3As8 were synthesized to investigate the resemblance to model systems Ba(Fe1-xMx)2Asx and LaO(Fe1-xMx)As in the scope of structural changes and superconductivity as described in Chapter 2.5. Initially amazing differences in superconducting properties com-paring 1038 and 1048 compounds are analyzed in Chapter 2.6 establishing an universal dop-ing model in the (CaFe1-xMxAs)10PtzAs8 family. Additionally substituent dependent properties upon rare earth substitution in electron doped (Ca1-yREyFeAs)10Pt3As8 are investigated in Chapter 2.7, while a detailed study of superconducting properties and magnetism in (Ca1-yLayFeAs)10Pt3As8 by the local μSR technique is presented in Chapter 2.8. In Chapter 2.9 a comparison of direct and electron doping is discussed based on codoping experiments in (Ca1-yLayFe1-xPtxAs)10Pt3As8 and (CaFe1-xPtxAs)10Pt4As8. Finally, in Chapter 2.10 electron doping in stoichiometric 1048 is studied by charge compensation experiments in (Ca1-yNayFeAs)10Pt4As8. Chapter 3 is dedicated to a new family of calcium iron arsenides featuring frameworks of interconnected iron arsenide layers. The first subchapter presents the structure

  20. Scanning near-field infrared microscopy on semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Rainer

    2011-01-15

    literature. While the structures of the first system were in the micrometer regime, the capability to probe buried nanostructures is demonstrated at a sample of indium arsenide quantum dots. Those dots are covered by a thick layer of gallium arsenide. For the first time ever, it is shown experimentally that transitions between electron states in single quantum dots can be investigated by near-field microscopy. By monitoring the near-field response of these quantum dots while scanning the wavelength of the incident light beam, it was possible to obtain characteristic near-field signatures of single dots. Near-field contrasts up to 30 % could be measured for resonant excitation of electrons in the conduction band of the indium arsenide dots. (orig.)

  1. Interaction of coal-derived synthesis gas impurities with solid oxide fuel cell metallic components

    Science.gov (United States)

    Marina, Olga A.; Pederson, Larry R.; Coyle, Christopher A.; Edwards, Danny J.; Chou, Yeong-Shyung; Cramer, Carolyn N.

    Oxidation-resistant alloys find use as interconnect materials, heat exchangers, and gas supply tubing in solid oxide fuel cell (SOFC) systems, especially when operated at temperatures below ∼800 °C. If fueled with synthesis gas derived from coal or biomass, such metallic components could be exposed to impurities contained in those fuel sources. In this study, coupons of ferritic stainless steels Crofer 22 APU and SS 441, austenitic nickel-chromium superalloy Inconel 600, and an alumina-forming high nickel alloy alumel were exposed to synthesis gas containing ≤2 ppm phosphorus, arsenic and antimony, and reaction products were tested. Crofer 22 APU coupons coated with a (Mn,Co) 3O 4 protective layer were also evaluated. Phosphorus was found to be the most reactive. On Crofer 22 APU, the (Mn,Cr) 3O 4 passivation layer reacted to form an Mn-P-O product, predicted to be manganese phosphate from thermochemical calculations, and Cr 2O 3. On SS 441, reaction of phosphorus with (Mn,Cr) 3O 4 led to the formation of manganese phosphate as well as an Fe-P product, predicted from thermochemical calculations to be Fe 3P. Minimal interactions with antimony or arsenic in synthesis gas were limited to Fe-Sb and Fe-As solid solution formation. Though not intended for use on the anode side, a (Mn,Co) 3O 4 spinel coating on Crofer 22 APU reacted with phosphorus in synthesis gas to produce products consistent with Mn 3(PO 4) 2 and Co 2P. A thin Cr 2O 3 passivation layer on Inconel 600 did not prevent the formation of nickel phosphides and arsenides and of iron phosphides and arsenides, though no reaction with Cr 2O 3 was apparent. On alumel, an Al 2O 3 passivation layer rich in Ni did not prevent the formation of nickel phosphides, arsenides, and antimonides, though no reaction with Al 2O 3 occurred. This work shows that unprotected metallic components of an SOFC stack and system can provide a sink for P, As and Sb impurities that may be present in fuel gases, and thus complicate

  2. Ion beam analysis of aluminium in thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Healy, M.J.F. E-mail: m.j.f.healy@rmcs.cranfield.ac.uk; Pidduck, A.J.; Dollinger, G.; Gorgens, L.; Bergmaier, A

    2002-05-01

    This work quantifies aluminium in thin surface and near surface layers. In one example, the layer overlies a thin gallium nitride layer on an aluminium oxide substrate and in a second example the aluminium exists just below the surface of an indium arsenide substrate. The technique of non-Rutherford elastic backscattering of protons was used for the samples where aluminum in the layer of interest needed to be resolved from aluminium in the sapphire substrate and the results were corroborated at the Technische Universitaet Muenchen using heavy ion elastic recoil detection analysis. In the second example, where it was unnecessary to isolate the signal of aluminium in the layer of interest (as the substrate contained no aluminium), then the {sup 27}Al(d,p{sub 01}){sup 28} Al nuclear reaction was used. The elastic proton scattering cross section of aluminum was found to vary very rapidly over the energy range of interest.

  3. Jefferson Lab IR demo FEL photocathode quantum efficiency scanner

    Science.gov (United States)

    Gubeli, J.; Evans, R.; Grippo, A.; Jordan, K.; Shinn, M.; Siggins, T.

    2001-12-01

    Jefferson Laboratory's Free Electron Laser (FEL) incorporates a cesiated gallium arsenide (GaAs) DC photocathode gun as its electron source. By using a set of scanning mirrors, the surface of the GaAs wafer is illuminated with a 543.5nm helium-neon laser. Measuring the current flow across the biased photocathode generates a quantum efficiency (QE) map of the 1-in. diameter wafer surface. The resulting QE map provides a very detailed picture of the efficiency of the wafer surface. By generating a QE map in a matter of minutes, the photocathode scanner has proven to be an exceptional tool in quickly determining sensitivity and availability of the photocathode for operation.

  4. Temperature mapping of operating nanoscale devices by scanning probe thermometry

    Science.gov (United States)

    Menges, Fabian; Mensch, Philipp; Schmid, Heinz; Riel, Heike; Stemmer, Andreas; Gotsmann, Bernd

    2016-03-01

    Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed in integrated circuits or plasmonic nanostructures, can be used to modify the local properties of matter, govern physical processes, activate chemical reactions and trigger biological mechanisms in living organisms. The development of high-resolution thermometry techniques is essential for understanding local thermal non-equilibrium processes during the operation of numerous nanoscale devices. Here we present a technique to map temperature fields using a scanning thermal microscope. Our method permits the elimination of tip-sample contact-related artefacts, a major hurdle that so far has limited the use of scanning probe microscopy for nanoscale thermometry. We map local Peltier effects at the metal-semiconductor contacts to an indium arsenide nanowire and self-heating of a metal interconnect with 7 mK and sub-10 nm spatial temperature resolution.

  5. Focusing effect of bent GaAs crystals for gamma-ray Laue lenses: Monte Carlo and experimental results

    CERN Document Server

    Virgilli, E; Rosati, P; Bonnini, E; Buffagni, E; Ferrari, C; Stephen, J B; Caroli, E; Auricchio, N; Basili, A; Silvestri, S

    2015-01-01

    We report on results of observation of the focusing effect from the planes (220) of Gallium Arsenide (GaAs) crystals. We have compared the experimental results with the simulations of the focusing capability of GaAs tiles through a developed Monte Carlo. The GaAs tiles were bent using a lapping process developed at the cnr/imem - Parma (Italy) in the framework of the laue project, funded by ASI, dedicated to build a broad band Laue lens prototype for astrophysical applications in the hard X-/soft gamma-ray energy range (80-600 keV). We present and discuss the results obtained from their characterization, mainly in terms of focusing capability. Bent crystals will significantly increase the signal to noise ratio of a telescope based on a Laue lens, consequently leading to an unprecedented enhancement of sensitivity with respect to the present non focusing instrumentation.

  6. Focusing effect of bent GaAs crystals for γ-ray Laue lenses: Monte Carlo and experimental results

    Science.gov (United States)

    Virgilli, E.; Frontera, F.; Rosati, P.; Bonnini, E.; Buffagni, E.; Ferrari, C.; Stephen, J. B.; Caroli, E.; Auricchio, N.; Basili, A.; Silvestri, S.

    2016-02-01

    We report on results of observation of the focusing effect from the planes (220) of Gallium Arsenide (GaAs) crystals. We have compared the experimental results with the Monte Carlo simulations of the focusing capability of GaAs tiles performed with a dedicated ray-tracer. The GaAs tiles were bent using a lapping process developed at the cnr/imem - Parma (Italy) in the framework of the laue project, funded by ASI, dedicated to build a broad band Laue lens prototype for astrophysical applications in the hard X-/soft γ-ray energy range (80-600 keV). We present and discuss the results obtained from their characterization, mainly in terms of focusing capability. Bent crystals will significantly increase the signal to noise ratio of a telescope based on a Laue lens, consequently leading to an unprecedented enhancement of sensitivity with respect to the present non focusing instrumentation.

  7. AlGaAs-On-Insulator Nonlinear Photonics

    CERN Document Server

    Pu, Minhao; Semenova, Elizaveta; Yvind, Kresten

    2015-01-01

    The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm i...

  8. Nonlinear absorption coefficient and relative refraction index change for an asymmetrical double δ-doped quantum well in GaAs with a Schottky barrier potential

    International Nuclear Information System (INIS)

    In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double δ-doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken as the basis for the evaluation of the linear and third-order nonlinear contributions to the optical absorption coefficient and to the relative refractive index change, making particular use of the asymmetry of the potential profile. These optical properties are then reported as a function of the Schottky barrier height (SBH) and the separation distance between the δ-doped quantum wells. Also, the effects of the application of hydrostatic pressure are studied. The results show that the amplitudes of the resonant peaks are of the same order of magnitude of those obtained in the case of single δ-doped field effect transistors; but tailoring the asymmetry of the confining potential profile allows the control the resonant peak positions

  9. Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature

    Science.gov (United States)

    Villa, E.; Aja, B.; de la Fuente, L.; Artal, E.

    2016-01-01

    This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

  10. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  11. Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires

    Science.gov (United States)

    Scherübl, Zoltán; Fülöp, Gergő; Madsen, Morten H.; Nygârd, Jesper; Csonka, Szabolcs

    2016-07-01

    Indium arsenide nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among other advantages they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin-based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic fields generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of the SOI can be strongly tuned up to a factor of 2 with the electric field across the NW, while the average electron density is kept constant. Furthermore, a simple electrostatic model is introduced to calculate the expected change of the SOI. Good agreement is found between the experimental results and the estimated Rashba-type SOI generated by the gate-induced electric field.

  12. High-powered, solid-state RF systems

    International Nuclear Information System (INIS)

    Over the past two years, the requirement to supply megawatts of rf power for space-based applications at UHF and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency range from 3000 to 10000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10000 MHz. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture are discussed. Solid-state rf amplifier susceptibility to radiation damage has been examined

  13. High-powered, solid-state rf systems

    International Nuclear Information System (INIS)

    Over the past two years, the requirement to supply megawatts of rf power for space-based applications at uhf and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency ranges from 3000 to 10,000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10,000 MHz. Information regarding power levels, size, weight, and cost will be given. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture will be discussed. Solid-stage rf amplifier susceptibility to radiation damage will also be examined

  14. Low-energy laser treatment of rheumatic diseases: a long-term study

    Science.gov (United States)

    Antipa, Ciprian; Moldoveanu, Vladimir; Rusca, Nicolae; Bruckner, Ion I.; Podoleanu, Adrian Gh.; Stanciulescu, Viorica

    1995-05-01

    We tried to establish the efficiency of low energy (power) lasers (LEL), in various inflammatory and noninflammatory rheumatic diseases during five years. We treated 514 patients with osteoarthrosis, 326 patients with nonarticular rheumatism and 82 patients with inflammatory rheumatism, in four different ways: only with Galium-Aluminum-Arsenide (GaAs) infrared lasers; both GaAs lasers and Helium neon (HeNe) lasers; with placebo laser; with classical anti-inflammatory therapy. The results were analyzed using local objective improvements and the score obtained from a pain scale before and after the treatments. We also note some preliminary results obtained by the computer analysis of the evocated potentials after laser irradiation. We conclude that LEL (especially HeNe with GaAs) is obviously more efficient than placebo laser therapy and also had better or at least similar results, in most of the cases, than classical anti-inflammatory therapy.

  15. Cryogenic ultra-low power dissipation operational amplifiers with GaAs JFETs

    Science.gov (United States)

    Hibi, Yasunori; Matsuo, Hiroshi; Ikeda, Hirokazu; Fujiwara, Mikio; Kang, Lin; Chen, Jian; Wu, Peiheng

    2016-01-01

    To realize a multipixel camera for astronomical observation, we developed cryogenic multi-channel readout systems using gallium arsenide junction field-effect transistor (GaAs JFET) integrated circuits (ICs). Based on our experience with these cryogenic ICs, we designed, manufactured, and demonstrated operational amplifiers requiring four power supplies and two voltage sources. The amplifiers operate at 4.2 K with an open-loop gain of 2000. The gain-bandwidth product can expect 400 kHz at a power dissipation of 6 μW. In performance evaluations, the input-referred voltage noise was 4 μVrms/Hz0.5 at 1 Hz and 30 nVrms/Hz0.5 at 10 kHz, respectively. The noise power spectrum density was of type 1/f and extended to 10 kHz.

  16. Scanning tunnelling microscopy and spectroscopy on organic PTCDA films deposited on sulfur passivated GaAs(001)

    International Nuclear Information System (INIS)

    Deposition of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) on sulfur passivated gallium arsenide S-GaAs(001) surfaces is investigated by scanning tunnelling microscopy and scanning tunnelling spectroscopy. The surface morphology and the film structure are studied for the multilayer growth of the organic molecules. Spectroscopic results for both clean substrate and ordered areas of PTCDA are shown in this work. We have measured I-V plots at different tip-sample distances, avoiding deformation of the organic layer. Under proper experimental conditions, a gap value of 2.2eV has been measured on PTCDA crystals, in good agreement with the expected value for PTCDA (2.2-2.55eV)

  17. Chemical beam epitaxy growth of III–V semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mohummed Noori, Farah T. [University of Baghdad , College of science, Physics department , Jadiriya ,Baghdad (Iraq)

    2013-12-16

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425–454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5–1 μm and of an array 40nm diameter with length is in the range 0.3–0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  18. Ultra Wide Wavelength Multiplexing/Demultiplexing Conventional Arrayed Waveguide Grating (AWG Devices for Multi Band Applications

    Directory of Open Access Journals (Sweden)

    Abd El–Naser A. Mohamed

    2012-03-01

    Full Text Available This paper has proposed new materials based conventional arrayed waveguide grating (AWG devices such as pure silica glass (SiO2, Lithium niobate (LiNbO3 , and gallium aluminum arsenide (Ga(1-xAl(xAs materials for multiplexing and demultiplexing applications in interval of 1.45 μm to 1.65 μm wavelength band, which including the short, conventional, long, and ultra long wavelength band. Moreover we have taken into account a comparison between these new materials within operating design parameters of conventional AWG devices such as diffraction order, length difference of adjacent waveguides, focal path length, free spectral range or region, maximum number of input/output wavelength channels, and maximum number of arrayed waveguides. As well as we have employed these materials based AWG to include Multi band applications under the effect of ambient temperature variations.

  19. Polarized Electron Gun Development at the Brookhaven National Laboratory

    International Nuclear Information System (INIS)

    Development of two different polarized electron guns is ongoing at BNL. One aims at extremely high brightness at a moderate beam current. This design uses a superconducting RF gun and a test setup is built to show that a Gallium-Arsenide cathode with negative affinity has a sufficiently long quantum efficiency lifetime in such an environment. An electron injector using this technology may eliminate the need of the electron damping ring and a long transport line at the International Linear Collider. The other project aims at producing a high beam current with moderate emittance requirements, dubbed the 'Gatling gun'. In this DC gun, bunches are extracted from 20 separate cathodes and merged into a single beam using a rotating magnetic field. Such an electron gun could serve as an injector for the electron-ion collider eRHIC, which is planned at BNL. We will report on the status of these projects.

  20. Neutron scattering studies of structure, magnetism and superconductivity under pressure in AFe2As2 (A=Ca, Ba) under pressure

    International Nuclear Information System (INIS)

    The interplay between superconductivity, magnetism, and structure has become a major theme of research in the iron arsenide families of superconductors. The strong coupling between magnetism and structure, for example, is illustrated by the parent compounds, AEFe2As2 (AE = Ba, Sr, Ca), which manifest simultaneous transitions from a paramagnetic, tetragonal phase to an antiferromagnetically ordered, orthorhombic phase. The coupling between superconductivity and magnetism has been demonstrated by, for example, the suppression of the antiferromagnetic ordering and orthorhombic distortion below the superconducting transition in some electron doped compounds. The elastic and inelastic neutron scattering measurements, under pressure, that have elucidated the nature of the magnetic order and its relationship to the tetragonal-orthorhombic structural transition at ambient pressure, the quenching of magnetism in the cT phase, and the identification of the superconducting phase in CaFe2As2 under applied uniaxial pressure are discussed

  1. Angle-resolved cathodoluminescence imaging polarimetry

    CERN Document Server

    Osorio, Clara I; Brenny, Benjamin; Polman, Albert; Koenderink, A Femius

    2015-01-01

    Cathodoluminescence spectroscopy (CL) allows characterizing light emission in bulk and nanostructured materials and is a key tool in fields ranging from materials science to nanophotonics. Previously, CL measurements focused on the spectral content and angular distribution of emission, while the polarization was not fully determined. Here we demonstrate a technique to access the full polarization state of the cathodoluminescence emission, that is the Stokes parameters as a function of the emission angle. Using this technique, we measure the emission of metallic bullseye nanostructures and show that the handedness of the structure as well as nanoscale changes in excitation position induce large changes in polarization ellipticity and helicity. Furthermore, by exploiting the ability of polarimetry to distinguish polarized from unpolarized light, we quantify the contributions of different types of coherent and incoherent radiation to the emission of a gold surface, silicon and gallium arsenide bulk semiconductor...

  2. Fiber-optic sensor family for the measurement of temperature, vibration, and pressure

    International Nuclear Information System (INIS)

    A family of fiberoptic sensors for measuring temperature, vibration and pressure is described with respect to measurement principle, sensor design and optical construction. Non-coherent optical luminescence phenomena are used as information carriers for the measuring parameters. The sensors contain luminescent materials (gallium arsenide or neodymium-doped glass) and have a mechanical design that is determined by the specific application. The optical design of the system is based on beam splitters with interference filters and other micro-components. Experimental results of present designs are described and the development potential of the sensors is discussed. Finally, an overview of present application areas is given together with results from recent field experiments and reference installations in progress at present. (orig.)

  3. Alteration zones around Kupferschiefer-type base metal mineralization in West Germany

    Science.gov (United States)

    Schmidt, F.-P.

    1987-07-01

    Several occurrences of red-colored rocks, which represent an unusual species within the lower Zechstein sediments as well as siderite ribbons and kaolinization have been reported from the West German lower Zechstein sequence. The red-colored rocks had been classified into two types, i.e., the stratiform red layers (SRL) and the Rote Fäule (RF). With regard to the gray beds, both types are characterized by enrichments and depletions of certain elements. As a result, ore-related Rote Fäule could be distinguished from insignificant stratiform red layers. Whereas Rote Fäule, which represents the alteration zone around diagenetic Kupferschiefer-type deposits, is chiefly characterized by apparent red coloring and enrichment in sulfate S, both the siderite ribbons and kaolinization of feldspars refer to formation of Cu-As sulfides and arsenides due to a hydrothermal, epigenetic process. Formation under more oxidizing, synsedimentary conditions is presumed for the stratiform red layers.

  4. Photon recycling and Shockley's diode equation

    Science.gov (United States)

    Martí, A.; Balenzategui, J. L.; Reyna, R. F.

    1997-10-01

    The Shockley's diode equation predicts a current-voltage characteristic different from that used by Shockley and Queisser to compute the limiting efficiency of photovoltaic energy conversion under the assumptions of the detailed balance theory. The reasons for such discrepancy are discussed being the neglect of photon recycling effects in Shockley's diode equation the main cause. This interpretation is crucial to understand the fundamentals on which the computation of the limiting efficiency of solar cells is based. Without photon recycling effects, it can be concluded that the limiting efficiency (one sun) of a gallium arsenide solar cell is 26.8% (with the sun assumed as blackbody at 6000 K) while the true figure is 30.7%, 38.7% as long as the angle of emission of photons from the cell is fully restricted.

  5. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

    1999-01-01

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  6. Hybrid Spintronic Structures With Magnetic Oxides and Heusler Alloys

    DEFF Research Database (Denmark)

    Xu, Y. B.; Hassan, S. S. A.; Wong, P. K. J.;

    2008-01-01

    As(100) and the unit cell of the Fe3O4 was found to be rotated by 45 degrees to match the gallium arsenide GaAs. The films were found to have a bulk-like moment down to 3-4 nm and a low coercivity indicating a high-quality magnetic interface. The magnetization hysteresis loops of the ultrathin films are...... controlled by uniaxial magnetic anisotropy. The dynamic response of the sample shows a heavily damped precessional response to the applied field pulses. In the Heusler alloy system of Co-2 MnGa on GaAs, we found that the magnetic moment was reduced for thicknesses down to 10 nm, which may account for the...

  7. Effect of tensile stress on the in-plane resistivity anisotropy in BaFe2As2

    International Nuclear Information System (INIS)

    The effect of uniaxial tensile stress and the resultant strain on the structural/magnetic transition in the parent compound of the iron arsenide superconductor BaFe2As2 is characterized by temperature-dependent electrical resistivity, x-ray diffraction, and quantitative polarized light imaging. We show that strain induces a measurable uniaxial structural distortion above the first-order magnetic transition and significantly smears the structural transition. This response is different from that found in another parent compound, SrFe2As2, where the coupled structural and magnetic transitions are strongly first order. This difference in the structural responses explains the in-plane resistivity anisotropy above the transition in BaFe2As2. This conclusion is supported by the Ginzburg-Landau-type phenomenological model for the effect of the uniaxial strain on the resistivity anisotropy.

  8. Buffer layer between a planar optical concentrator and a solar cell

    International Nuclear Information System (INIS)

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile

  9. Innovation in crystal growth: A personal perspective

    Science.gov (United States)

    Mullin, J. B.

    2008-04-01

    The evolution of crystal growth has been crucially dependent on revolutionary innovations and initiatives involving ideas, technology and communication. A personal perspective is presented on some of these aspects in connection with the early history of semiconductors that have helped evolve our knowledge and advance the science and technology of crystal growth. The presentation considers examples from work on germanium, silicon, indium antimonide, gallium arsenide, indium phosphide, gallium phosphide and mercury cadmium telluride. In connection with metal organic vapour phase epitaxy (MOVPE), the influence of adduct purification for alkyls is noted together with the growth of Hg xCd 1-xTe. The role of crystal growth organisations together with initiatives in the publication of the Journal of Crystal Growth (JCG) and the pivotal role of the International Organisation of Crystal Growth (IOCG) are also highlighted in the quest for scientific excellence.

  10. Evaluation of DAST and zinc telluride nonlinear crystals for efficient terahertz generation

    International Nuclear Information System (INIS)

    Terahertz (THz) signal is generated from 4-N, N-dimethylamino-4’-N’-methyl-stilbazolium tosylate (i.e. DAST Crystal) and Zinc telluride (ZnTe) nonlinear crystals by employing 140 fs laser pulses at 800 nm with 80 MHz repetition rate. The semi insulating gallium arsenide photoconductive stripline antennas (gap =5 µm, length = 20 µm) is used as a Terahertz detector. The detected temporal profile of Terahertz radiation generated from DAST crystal is high as compared to ZnTe crystal in terms of amplitude. THz effective bandwidths of these crystals are extended up to 1.1 THz range. The potential of THz generation of DAST and ZnTe crystals are evaluated with respect to incident laser power

  11. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.

    2014-08-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  12. First tests of a Medipix-1 pixel detector for X-ray dynamic defectoscopy

    CERN Document Server

    Vavrik, D; Visschers, J; Pospísil, S; Ponchut, C; Zemankova, J

    2002-01-01

    Recent theoretical damage material models describe the dynamic development of voids and microcracks in materials under plastic deformation. For these models, experimental verification is needed. We propose direct and non-destructive observation of the propagation of material damage by measuring changes in transmission of X-rays penetrating a stressed material, using a photon-counting X-ray imager. The present contribution aims to demonstrate the applicability of silicon and gallium-arsenide devices for X-ray transmission measurements with a specimen of high-ductile aluminium alloy under study. The first experiments to determine the resolution and the sensitivity of the proposed method with the Medipix-1 pixel detector are presented.

  13. Structural and magnetic phase transitions in NdCoAsO under high pressures

    International Nuclear Information System (INIS)

    We have investigated structural and magnetic phase transitions under high pressures in a quaternary rare-earth transition-metal arsenide oxide NdCoAsO compound that is isostructural to the high temperature superconductor parent phase NdFeAsO. The four-probe electrical resistance measurements carried out in a designer diamond anvil cell show that the ferromagnetic Curie temperature and antiferromagnetic Neel temperature increase with an increase in pressure. High pressure x-ray diffraction studies using a synchrotron source show a structural phase transition from a tetragonal phase to a new crystallographic phase at a pressure of 23 GPa at 300 K. The NdCoAsO sample remained antiferromagnetic and non-superconducting down to 10 K and up to the highest pressure achieved in this experiment, 53 GPa. A P-T phase diagram for NdCoAsO is presented from ambient conditions to P = 53 GPa and T = 10 K.

  14. Pressure induced phase transformation and electronic properties of AlAs

    International Nuclear Information System (INIS)

    We have performed the first-principle study to analyze the structural and electronic properties of aluminum arsenide under the application of pressure. The computations have been carried out using the ground state total energy calculation approach of the system. The first-principle approach has been used to compute the stability of various phases of AlAs, like original zinc blende (B3), intermediate NiAs (B8), NaCl (B1) and CsCl (B2) type as a function of pressure. The study observes a B3-B8, B3-B1 and B3-B2 transitions at 6.99 GPa, 8.18 GPa and 73.43 GPa. The computed phase transition pressures, lattice parameters, bulk modulus, and energy gaps are in good agreement with their experimental as well as theoretical counterparts. Band structure and density of states analysis have also been performed and results have been discussed in detail.

  15. Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

    Science.gov (United States)

    Tanta, Rawa; Kanne, Thomas; Amaduzzi, Francesca; Liao, Zhiyu; Madsen, Morten H.; Alarcón-Lladó, Esther; Krogstrup, Peter; Johnson, Erik; Morral, Anna Fontcuberta i.; Vosch, Tom; Nygård, Jesper; Jespersen, Thomas S.

    2016-07-01

    Any device exposed to ambient conditions will be prone to oxidation. This may be of particular importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using a focused laser beam. Polarization dependent micro-Raman measurements confirmed the presence of crystalline arsenic, and transmission electron microscopy diffraction showed the presence of indium oxide. The surface dependence of the oxidation was investigated in branched nanowires grown along the [0001] and [01\\bar{1}0] wurtzite crystal directions exhibiting different surface facets. The oxidation did not occur at the [01\\bar{1}0] direction. The origin of this selectivity is discussed in terms transition state kinetics of the free surfaces of the different crystal families of the facets and numerical simulations of the laser induced heating.

  16. Non-destructive analysis of European cobalt blue glass trade beads

    International Nuclear Information System (INIS)

    Chemical analyses were made of royal blue glass trade beads from two early 17th century, archaeological sites in southern Ontario, Canada and from a glass beadmaking house in Amsterdam, The Netherlands. The results confirm that these beads were all mixed alkali - lime - silica glasses, coloured with Co and with opaque varients opacificed with Sn. The groupings by chemistry tend to segregate by bead shapes, so that oval beads group together and circular shaped beads group together. Although the 2 Canadian sites are about 190 km apart, they produced 2 different sets of oval beads of similar chemistry, possibly helping confirm the contemporaneity of the people at both sites. An As/Co atomic ratio of about two may fit with the possible source of Co as a cobalt-arsenide ore (of common name smaltite) from the Hartz Mountains of eastern Germany, a source not far from either Amsterdam or Venice, both well known glass beadmaking centres of the period. (author)

  17. Industrialization study, phase 2. [assessment of advanced photovoltaic technologies for commerical development

    Science.gov (United States)

    1979-01-01

    The potentials and requirements of advanced photovoltaic technologies still in their early developmental stages were evaluated and compared to the present day single crystal silicon wafer technology and to each other. The major areas of consideration include polycrystalline and amorphous silicon, single crystal and polycrystalline gallium arsenide, and single crystal and polycrystalline cadmium sulfide. A rank ordering of the advanced technologies is provided. The various ranking schemes were based upon present-day efficiency levels, their stability and long-term reliability prospects, material availability, capital investments both at the laboratory and production level, and associated variable costs. An estimate of the timing of the possible readiness of these advanced technologies for technology development programs and industrialization is presented along with a set of recommended government actions concerning the various advanced technologies.

  18. Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

    Science.gov (United States)

    Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

    2005-01-01

    This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

  19. Arsenic-Microbe-Mineral Interactions in Mining-Affected Environments

    Directory of Open Access Journals (Sweden)

    Karen A. Hudson-Edwards

    2013-10-01

    Full Text Available The toxic element arsenic (As occurs widely in solid and liquid mine wastes. Aqueous forms of arsenic are taken up in As-bearing sulfides, arsenides, sulfosalts, oxides, oxyhydroxides, Fe-oxides, -hydroxides, -oxyhydroxides and -sulfates, and Fe-, Ca-Fe- and other arsenates. Although a considerable body of research has demonstrated that microbes play a significant role in the precipitation and dissolution of these As-bearing minerals, and in the alteration of the redox state of As, in natural and simulated mining environments, the molecular-scale mechanisms of these interactions are still not well understood. Further research is required using traditional and novel mineralogical, spectroscopic and microbiological techniques to further advance this field, and to help design remediation schemes.

  20. Thallium-doped BaFe2As2 crystals: The unusual competition between magneto-elastic coupling and charge doping

    Science.gov (United States)

    Sefat, Athena; Li, Li; Cao, Huibo; Sales, Brian; McGuire, Michael; Custelcean, Radu; Parker, David

    We partially substitute thallium for barium and report the effects of interlayer coupling in Ba1-xTlxFe2As2 crystals. We demonstrate the unusual competition between magneto-elastic coupling and charge doping in an iron-arsenide material, whereby TN temperature rises in BaFe2As2, and then falls with additional Tl-doping. Evidence from temperature-dependent bulk thermodynamic and transport properties, and neutron diffraction results will be presented. Using LDA, we illustrate that small changes related to 3 d transition-metal state can have profound effects on magnetism. The work is supported by the U.S. DOE, Office of Science, BES, Materials Sciences and Engineering Division, and Chemical Sciences, Geosciences, and Biosciences Division. The work at ORNL's HFIR is sponsored by the Scientific User Facilities Division.

  1. Evaluation and comparison of SN and Monte-Carlo charged particle transport calculations

    International Nuclear Information System (INIS)

    A study was done to evaluate a 3-D SN charged particle transport code called SMARTEPANTS1 and another 3-D Monte Carlo code called Integrated Tiger Series, ITS2. The evaluation study of SMARTEPANTS code was based on angular discretization and reflected boundary sensitivity whilst the evaluation of ITS was based on CPU time and variance reduction. The comparison of the two code was based on energy and charge deposition calculation in block of Gallium Arsenide with embedded gold cylinders. The result of evaluation tests shows that an S8 calculation maintains both accuracy and speed and calculations with reflected boundaries geometry produces full symmetrical results. As expected for ITS evaluation, the CPU time and variance reduction are opposite to a point beyond which the history augmentation while increasing the CPU time do not result in variance reduction. The comparison test problem showed excellent agreement in total energy deposition calculations

  2. Buffer layer between a planar optical concentrator and a solar cell

    Science.gov (United States)

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-01

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  3. Influence of photon recycling effects in the operation and design of GaAs solar cells; Influencia del reciclaje de fotones en el funcionamiento y del diseno de las celulas solares de Arsenico de Galio

    Energy Technology Data Exchange (ETDEWEB)

    Balenzategui Manzanares, J. L.

    2005-07-01

    Photon recycling (PR) is the process by which photons internally emitted in a semiconductor can be re-absorbed by the material, giving as result new electron-hole pairs. Although this process has been receiving some international research from the Sixties, because their effects revealed as relevant in certain devices and materials (as in gallium arsenide), its influence in the operation of solar cells has been scarcely considered in the past. Thus deposited it has been demonstrated that one of its major effects is an enhancement of the radiative carrier lifetine, photon recycling is not usually taken into account in photovoltaic, neither in device modelling and simulation, nor from the perspective of taking advantage of the phenomenon to improve the efficiency of solar cells. This work describes the results of our investigations in the field of photon recycling. (Author)

  4. Nonlinear absorption coefficient and relative refraction index change for an asymmetrical double δ-doped quantum well in GaAs with a Schottky barrier potential

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Briseño, J.G.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia)

    2013-09-01

    In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double δ-doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken as the basis for the evaluation of the linear and third-order nonlinear contributions to the optical absorption coefficient and to the relative refractive index change, making particular use of the asymmetry of the potential profile. These optical properties are then reported as a function of the Schottky barrier height (SBH) and the separation distance between the δ-doped quantum wells. Also, the effects of the application of hydrostatic pressure are studied. The results show that the amplitudes of the resonant peaks are of the same order of magnitude of those obtained in the case of single δ-doped field effect transistors; but tailoring the asymmetry of the confining potential profile allows the control the resonant peak positions.

  5. Amorphous metallic films in silicon metallization systems

    Science.gov (United States)

    So, F.; Kolawa, E.; Nicolet, M. A.

    1985-01-01

    Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

  6. Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

    Directory of Open Access Journals (Sweden)

    Yunfei Shang

    2015-10-01

    Full Text Available Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous, gallium arsenide (GaAs solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed

  7. Active terahertz beam steering by photo-generated graded index gratings in thin semiconductor films.

    Science.gov (United States)

    Steinbusch, T P; Tyagi, H K; Schaafsma, M C; Georgiou, G; Gómez Rivas, J

    2014-11-01

    We demonstrate active beam steering of terahertz radiation using a photo-excited thin layer of gallium arsenide. A constant gradient of phase discontinuity along the interface is introduced by an spatially inhomogeneous density of free charge carriers that are photo-generated in the GaAs with an optical pump. The optical pump has been spatially modulated to form the shape of a planar blazed grating. The phase gradient leads to an asymmetry between the +1 and -1 transmission diffracted orders of more than a factor two. Optimization of the grating structure can lead to an asymmetry of more than one order of magnitude. Similar to metasurfaces made of plasmonic antennas, the photo-generated grating is a planar structure that can achieve large beam steering efficiency. Moreover, the photo-generation of such structures provides a platform for active THz beam steering. PMID:25401807

  8. Micro-cooler enhancements by barrier interface analysis

    Directory of Open Access Journals (Sweden)

    A. Stephen

    2014-02-01

    Full Text Available A novel gallium arsenide (GaAs based micro-cooler design, previously analysed both experimentally and by an analytical Heat Transfer (HT model, has been simulated using a self-consistent Ensemble Monte Carlo (EMC model for a more in depth analysis of the thermionic cooling in the device. The best fit to the experimental data was found and was used in conjunction with the HT model to estimate the cooler-contact resistance. The cooling results from EMC indicated that the cooling power of the device is highly dependent on the charge distribution across the leading interface. Alteration of this charge distribution via interface extensions on the nanometre scale has shown to produce significant changes in cooler performance.

  9. Transmission electron microscopy assisted in-situ joule heat dissipation study of individual InAs nanowires

    International Nuclear Information System (INIS)

    Managing heat transport at nanoscale is an important and challenging task for nanodevice applications and nanostructure engineering. Herein, through in-situ engineering nanowire (NW)-electrode contacts with electron beam induced carbon deposition in a transmission electron microscope, Joule heat dissipation along individual suspended Indium Arsenide NWs is well managed to obtain pre-designed temperature profiles along NWs. The temperature profiles are experimentally determined by the breakdown site of NWs under Joule heating and breakdown temperature measurement. A model with NW-electrode contacts being well considered is proposed to describe heat transport along a NW. By fitting temperature profiles with the model, thermal conductance at NW-electrode contacts is obtained. It is found that, the temperature profile along a specific NW is mainly governed by the relative thermal conductance at the two NW-electrode contacts, which is engineered in experiments

  10. The Laser MicroJet (LMJ): a multi-solution technology for high quality micro-machining

    Science.gov (United States)

    Mai, Tuan Anh; Richerzhagen, Bernold; Snowdon, Paul C.; Wood, David; Maropoulos, Paul G.

    2007-02-01

    The field of laser micromachining is highly diverse. There are many different types of lasers available in the market. Due to their differences in irradiating wavelength, output power and pulse characteristic they can be selected for different applications depending on material and feature size [1]. The main issues by using these lasers are heat damages, contamination and low ablation rates. This report examines on the application of the Laser MicroJet(R) (LMJ), a unique combination of a laser beam with a hair-thin water jet as a universal tool for micro-machining of MEMS substrates, as well as ferrous and non-ferrous materials. The materials include gallium arsenide (GaAs) & silicon wafers, steel, tantalum and alumina ceramic. A Nd:YAG laser operating at 1064 nm (infra red) and frequency doubled 532 nm (green) were employed for the micro-machining of these materials.

  11. Transient reflectance of photoexcited Cd3As2

    International Nuclear Information System (INIS)

    We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd3As2, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two processes, one of duration 500 fs and the other of duration 3.1 ps. By measuring the complex phase of the change in reflectance, we determine that the faster signal corresponds to a decrease in absorption, and the slower signal to a decrease in the light's phase velocity, at the probe energy. We attribute these signals to electrons' filling of phase space, first near the photon energy and later at lower energy. We attribute their decay to cooling by rapid emission of optical phonons, then slower emission of acoustic phonons. We also present evidence that both the electrons and the lattice are strongly heated

  12. Transient reflectance of photoexcited Cd{sub 3}As{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C. P., E-mail: cweber@scu.edu; Berggren, Bryan S. [Department of Physics, Santa Clara University, 500 El Camino Real, Santa Clara, California 95053-0315 (United States); Arushanov, Ernest; Nateprov, Alex [Institute of Applied Physics, Academy of Sciences of Moldova, Academiei str. 5, MD 2028 Chisinau (Moldova, Republic of); Hosseini, Tahereh; Kouklin, Nikolai [Departments of Electrical Engineering and Computer Science, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

    2015-06-08

    We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd{sub 3}As{sub 2}, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two processes, one of duration 500 fs and the other of duration 3.1 ps. By measuring the complex phase of the change in reflectance, we determine that the faster signal corresponds to a decrease in absorption, and the slower signal to a decrease in the light's phase velocity, at the probe energy. We attribute these signals to electrons' filling of phase space, first near the photon energy and later at lower energy. We attribute their decay to cooling by rapid emission of optical phonons, then slower emission of acoustic phonons. We also present evidence that both the electrons and the lattice are strongly heated.

  13. Elastic constants of nanoporous III-V semiconductors

    International Nuclear Information System (INIS)

    Resonant ultrasound spectroscopy is applied to determine elastic constants of nanoporous gallium arsenide and indium phosphide single crystals with various pore morphologies. Three samples with approximately the same level of porosity (30%) are studied; it is shown that in all cases this porosity leads to a decrease of Young’s moduli by more than 50% and to a significant increase of the Poisson’s ratios, while the strength of the resulting elastic anisotropy of the nanoporous material follows from the particular morphology of the pores. The experimentally obtained elastic constants are compared to those predicted for the given morphologies by finite elements modeling. It is observed that the numerical models give acceptably realistic predictions of the elastic constants, although they tend to underestimate the decrease of the elastic moduli due to the porosity as well as the corresponding increase of the Poisson’s ratio. (paper)

  14. Matrices of 960-nm vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength of 958–962 nm with threshold currents of 1.1–1.3 mA, differential efficiency of 0.5–0.8 mW/mA, and a maximum output power of 7.5–9 mW. The parameter variation of individual emitters within a matrix chip containing 5 × 7 elements does not exceed ±20%.

  15. Cameras for semiconductor process control

    Science.gov (United States)

    Porter, W. A.; Parker, D. L.

    1977-01-01

    The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.

  16. Resonance-like tunneling across a barrier with adjacent wells

    Indian Academy of Sciences (India)

    S Mahadevan; P Prema; S K Agarwalla; B Sahu; C S Shastry

    2006-09-01

    We examine the behavior of transmission coefficient across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods–Saxon shape. We find that presence of well with suitable width and depth can substantially alter at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices.

  17. Integrated three-dimensional photonic nanostructures for achieving near-unity solar absorption and superhydrophobicity

    Science.gov (United States)

    Kuang, Ping; Hsieh, Mei-Li; Lin, Shawn-Yu

    2015-06-01

    In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ˜95% for λ = 400-620 nm over a wide angular acceptance of θ = 0°-60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400-870 nm. Furthermore, the use of the slanted SiO2 nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter state wetting, and superhydrophobic surface is obtained with highest water contact angle θCB ˜ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.

  18. Development and commercialization of mode-locked VECSELs

    Science.gov (United States)

    Hempler, Nils; Bialkowski, Bartlomiej; Hamilton, Craig J.; Maker, Gareth T.; Malcolm, Graeme P. A.

    2015-03-01

    This paper will describe the current state-of-the-art in commercial mode-locked Vertical External Cavity Surface Emitting Lasers (VECSEL) and demonstrate their efficacy in key applications. Based on indium gallium arsenide quantum well gain structures, our systems operate between 920 nm - 1050 nm with >1 W output powers, 200 MHz pulse repetition rate and technology to market will be discussed. These include: thermal management challenges, electronic control system development and robust mechanical design requirements. Having the potential to replace more conventional titanium sapphire laser technology where wavelength flexibility can be traded off against a significantly lower cost point and form factor, we will discuss the use of VECSELs in key applications such as nonlinear microscopy.

  19. Effect of hydrogen on change carrier dissipation in 60Co irradiated by γ-quanta and non-alloyed n-type GaAs

    International Nuclear Information System (INIS)

    The pretreatment in hydrogen plasma (the hydrogenation) influences on the charge carrier dissipation processes in the non-alloyed gallium arsenide of n-type with no = (5...7) centre dot 1015 cm-3 and μo = (5...6) centre dot 10 13 cm2 / (V centre dot c) irradiated by γ-quantum 60Co was studied. The comparison of experimental dependence μ (T) with the designed one in the temperature range 77...291 K for non-hydrogenized and hydrogenized non irradiated and γ-quantum irradiated crystals was carried out. It is shown that the main dissipative mechanism that determine the charged carrier mobility in the non hydrogenized material is the dissipation on the charged centers - the radiation defects in the γ-quantum irradiated GaAs; the presence of double ionized defects is possible

  20. Characterization of GaAs and hetero-structures of GaAs-(AlGa)As films, by Hall effect

    International Nuclear Information System (INIS)

    Hall effect measurements were performed on a series of semiconductor gallium arsenide (GaAs) films, intentionally or unitentionally doped, grown by molecular beam epitaxy (MBE). These measurements made possible both the evaluation of the films quality and the calibration of the dopants (Si and Be) effusion cells on the growing machine. Measurements on modulation doped single interface heterostructures also grown by MBE followed. The two dimensional electron gas in the heterostructures shows low temperature high mobility. The application of a strong magnetic field perpendicular to the plane of the gas eliminated its degrees of freedom completely and permitted the observation of Schubnikov-deHaas oscillations and integer quantum Hall effect. During the work we have deviced and developed apparatus in order to make ohmic contacts and perform litography to semiconductors. (author)

  1. Signal amplitude and shape of detector amplitude spectrum at incomplete charge transfer

    International Nuclear Information System (INIS)

    Operation of a detector under potent capture of charge carriers via localization was studied. Analysis was carried out as applied to semi-insulating gallium arsenide base detectors (SI GaAs) at recording of short-range ions. It was assumed that the main capture of carriers occurred when they were drifting. It was shown that the derived express-ions for a signal amplitude and spectrum shape contained three independent parameters. Determination of their values in the course of the experiment enabled to determine the value of the filed average stress and the rate of its propagation within the structure in the function of the applied stress, as well as, the value of life time of carriers before capture

  2. X-ray diffraction patterns of single crystals implanted with high-energy light ions

    International Nuclear Information System (INIS)

    X-ray diffraction patterns of silicon and gallium arsenide single crystals implanted with high-energy protons and α-particles were studied. A various models of lattice parameter changes were analysed. The agreement between the simulation and experiment proves that the lattice parameter depth-distribution can be assumed to be proportional to vacancy distribution obtained by Monte-Carlo method and from the Biersack-Ziegler theory. Most of the X-ray experiments were performed using synchrotron source of X-ray radiation in particular in the case of back-reflection and transmission section topographic methods. The new method of direct determination of the implanted ion ranges was proposed using synchrotron radiation back-reflection section topography. A number of new interference phenomena was revealed and explained. These interferences are important in the applications of diffraction theory in studying of the real structure of implanted layers. (author)

  3. The CRRES high efficiency solar panel

    International Nuclear Information System (INIS)

    This paper reports on the High Efficiency Solar Panel (HESP) experiments which is to provide both engineering and scientific information concerning the effects of space radiation on advanced gallium arsenide (GaAs) solar cells. The HESP experiment consists of an ambient panel, and annealing panel and a programmable load. This experiment, in conjunction with the radiation measurement experiments abroad the CREES, provides the first opportunity to simultaneously measure the trapped radiation belts and the results of radiation damage to solar cells. The engineering information will result in a design guide for selecting the optimum solar array characteristics for different orbits and different lifetimes. The scientific information will provide both correlation of laboratory damage effects to space damage effects and a better model for predicting effective solar cell panel lifetimes

  4. Pressure effects on the elastic and lattice dynamics properties of AlP from first-principles calculations

    International Nuclear Information System (INIS)

    We have performed first-principles calculations to investigate the behavior under hydrostatic pressure of the structural, elastic and lattice dynamics properties of aluminum phosphide crystal (AlP), in both zinc-blende (B3) and nickel arsenide (B8) phases. Our calculated structural and electronic properties are in good agreement with previous theoretical and experimental results. The elastic constants, bulk modulus (B), shear modulus (G), and Young's modulus (E), Born effective charge and static dielectric constant ε0, were calculated with the generalized gradient approximations and the density functional perturbation theory (DFPT). Our results in the pressure behavior of the elastic and dielectric properties of both phases are compared and contrasted with the common III–V materials. The Born effective charge ZB decreases linearly with pressure increasing, while the static dielectric constant decreases quadratically with the increase of pressure

  5. Pressure effects on the elastic and lattice dynamics properties of AlP from first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Lakel, S., E-mail: s.lakel@yahoo.fr [Laboratory of physical materials - University of LAGHOUAT – BP 37G, Laghouat (Algeria); Laboratoire de Matériaux Semi Conducteurs et Métalliques «LMSM», Université de Biskra (Algeria); Okbi, F. [Laboratoire de Sciences Fondamentales, Université Amar Telidji de Laghouat, BP 37G, Laghouat 03000 (Algeria); Ibrir, M. [Laboratoire de Sciences Fondamentales, Université Amar Telidji de Laghouat, BP 37G, Laghouat 03000 (Algeria); Département de physique, Université de M' sila (Algeria); Almi, K. [Laboratoire de Matériaux Semi Conducteurs et Métalliques «LMSM», Université de Biskra (Algeria)

    2015-03-30

    We have performed first-principles calculations to investigate the behavior under hydrostatic pressure of the structural, elastic and lattice dynamics properties of aluminum phosphide crystal (AlP), in both zinc-blende (B3) and nickel arsenide (B8) phases. Our calculated structural and electronic properties are in good agreement with previous theoretical and experimental results. The elastic constants, bulk modulus (B), shear modulus (G), and Young's modulus (E), Born effective charge and static dielectric constant ε{sub 0}, were calculated with the generalized gradient approximations and the density functional perturbation theory (DFPT). Our results in the pressure behavior of the elastic and dielectric properties of both phases are compared and contrasted with the common III–V materials. The Born effective charge ZB decreases linearly with pressure increasing, while the static dielectric constant decreases quadratically with the increase of pressure.

  6. PDT in non-surgical treatment of periodontitis in kidney transplanted patients: a split-mouth, randomized clinical trial

    Science.gov (United States)

    Marinho, Kelly C. T.; Giovani, Elcio M.

    2016-03-01

    This study was to evaluate clinical and microbiological effectiveness of photodynamic therapy (PDT) in the treatment of periodontal disease in kidney-transplanted patients. Eight kidney transplanted patients treated at Paulista University were arranged in two groups: SRP performed scaling and root planning by ultrasound; SRP+PDT- in the same patient, which was held to PDT in the opposite quadrant, with 0.01% methylene blue and red laser gallium aluminum arsenide, wavelength 660 nm, power 100 mW. There was reduction in probing pocket depth after 45 days and 3 months regardless the group examined; plaque and bleeding index showed improvement over time, regardless the technique used, and bleeding index in the SRP+PDT group was lower when compared with the baseline the other times. There was no difference in the frequency of pathogens. Photodynamic therapy may be an option for treatment of periodontal disease in renal-transplanted patients and its effectiveness is similar to conventional therapy.

  7. Effect of InAlAs window layer on efficiency of indium phosphide solar cells

    Science.gov (United States)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.

  8. Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

    Science.gov (United States)

    Jain, R. K.; Landis, G. A.

    1991-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.

  9. High altitude AM0 testing of PV concentrator lens elements. [Air Mass Zero

    Science.gov (United States)

    Piszczor, M. F.; Brinker, D. J.; Boyer, E. O.; Mcknight, R. C.; Ranaudo, R. J.

    1990-01-01

    Recently, the NASA Lewis Research Center modified its Lear High Altitude Test Facility to fly two prototype ENTECH minidome Fresnel lens photovoltaic concentrator elements. The tests were highly successful, and the results verified the ability of the Lear High Altitude Facility to measure the optical performance of individual concentrator lens elements and concentrator/cell combinations at near AM0 insolation conditions. The two concentrator lenses flown achieved optical efficiencies, based on a gallium arsenide concentrator cell response, of 89.8 percent and 90.0 percent. The flights demonstrated the ability of the aircraft to maintain the pointing accuracy required to obtain useful data. With proper alignment of the collimating tube and the pilot's sunsight, this facility could easily maintain a pointing accuracy of + or - 0.5 deg for a sufficiently long time to obtain accurate, reproducible results.

  10. Monolithic cryogenic preamplifiers based on large gate-area GaAs MESFETs

    International Nuclear Information System (INIS)

    Monolithic preamplifiers using large gate-area Gallium-Arsenide Metal-Semiconductor Field-Effect Transistors (GaAs MESFETs) at the input have been designed and fabricated using an ion-implanted GaAs process. Large gate-area is necessary to obtain low series noise. A differential voltage-sensitive preamplifier has at the input two MESFETs with a gate width W = 6,000 microm, it is fully DC coupled, has a large common-mode rejection ratio (CMRR) and dissipates low power at 4 K. Dual current-sensitive preamplifiers using at the input MESFETs with W = 24,000 microm, designed for the readout of noble liquid calorimeters, have been integrated in a single chip. Recent tests with a LAr calorimeter prototype demonstrated strong noise reduction compared to previous state-of-the-art hybrid readout circuits. Radiation damage tests have been performed at cold on the current-sensitive preamplifier chips

  11. Micro and nano devices in passive millimetre wave imaging systems

    Science.gov (United States)

    Appleby, R.

    2013-06-01

    The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

  12. Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

    International Nuclear Information System (INIS)

    Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

  13. Mechanical design of a low concentration ratio solar array for a space station application

    Science.gov (United States)

    Biss, M. S.; Hsu, L.

    1983-01-01

    This paper describes a preliminary study and conceptual design of a low concentration ratio solar array for a space station application with approximately a 100 kW power requirement. The baseline design calls for a multiple series of inverted, truncated, pyramidal optical elements with a geometric concentration ratio (GCR) of 6. It also calls for low life cycle cost, simple on-orbit maintainability, 1984 technology readiness date, and gallium arsenide (GaAs) of silicon (Si) solar cell interchangeability. Due to the large area needed to produce the amount of power required for the baseline space station, a symmetrical wing design, making maximum use of the commonality of parts approach, was taken. This paper will describe the mechanical and structural design of a mass-producible solar array that is very easy to tailor to the needs of the individual user requirement.

  14. Periodicity of element and compounds in U,Bi,Pb,Hg,Pt,Sn,Zn,Cu,Ni,Fe deposits

    International Nuclear Information System (INIS)

    The analysis of succession of mineral formation of various types of endogene mineralization at U, Bi, Pb, Hg, Sn, Zn, Cu, Na, Co, Fe deposits is performed. It is shown that despite the difference in genetic types and physico-chemical conditions of formation in different type systems the regular succession in mineral formation exists. The main succession factors of mineral formation in all systems are charge, atomic masses and volume, electronic configuration, entropy and valent state of the element. In uranium deposits penta-element, sulphide-pitchblende, Ti-U-formations. In the above formation the following succession of mineral formation is established: 1) silicate-oxidic, association, 2) quartz-sulphide, 3) quartz-carbonate-pitchblende, 4) fluorite-arsenide, 5) quartz-hematite

  15. Micro-coolers fabricated as a component in an integrated circuit

    International Nuclear Information System (INIS)

    The packing density and power capacity of integrated electronics is increasing resulting in higher thermal flux densities. Improved thermal management techniques are required and one approach is to include thermoelectric coolers as part of the integrated circuit. An analysis will be described showing that the supporting substrate will have a large influence on the cooling capacity of the thermoelectric cooler. In particular, for materials with a low ZT figure of merit (for example gallium arsenide (GaAs) based compounds) the substrate will have to be substantially thinned to obtain cooling, which may preclude the use of thermoelectric coolers, for example, as part of a GaAs based integrated circuit. Further, using experimental techniques to measure only the small positive cooling temperature difference (ΔT) between the anode (Th) and the cathode (Tc) contacts can be misinterpreted as cooling when in fact it is heating. (paper)

  16. Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

    Science.gov (United States)

    Okojie, Robert S.

    2001-01-01

    The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

  17. Ion trap in a semiconductor chip

    Science.gov (United States)

    Stick, D.; Hensinger, W. K.; Olmschenk, S.; Madsen, M. J.; Schwab, K.; Monroe, C.

    2006-01-01

    The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ions. Work on miniaturizing electromagnetic traps to the micrometre scale promises even higher levels of control and reliability. Compared with `chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass-spectrometer arrays, compact atomic clocks and, most notably, large-scale quantum information processors. Here we report the operation of a micrometre-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium-arsenide heterostructure.

  18. Universal Test Facility

    Science.gov (United States)

    Laughery, Mike

    A universal test facility (UTF) for Space Station Freedom is developed. In this context, universal means that the experimental rack design must be: automated, highly marketable, and able to perform diverse microgravity experiments according to NASA space station requirements. In order to fulfill these broad objectives, the facility's customers, and their respective requirements, are first defined. From these definitions, specific design goals and the scope of the first phase of this project are determined. An examination is first made into what types of research are most likely to make the UTF marketable. Based on our findings, the experiments for which the UTF would most likely be used included: protein crystal growth, hydroponics food growth, gas combustion, gallium arsenide crystal growth, microorganism development, and cell encapsulation. Therefore, the UTF is designed to fulfill all of the major requirements for the experiments listed above. The versatility of the design is achieved by taking advantage of the many overlapping requirements presented by these experiments.

  19. Resonantly enhanced second-harmonic generation using III-V semiconductor all-dielectric metasurfaces

    CERN Document Server

    Liu, Sheng; Keeler, Gordon A; Sinclair, Michael B; Yang, Yuanmu; Reno, John; Pertsch, Thomas; Brener, Igal

    2016-01-01

    Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently, allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scales render phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using Gallium Arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance we measure an absolute nonlinear conversion efficiency o...

  20. Response of timepix detector with GaAs:Cr and Si sensor to heavy ions

    Science.gov (United States)

    Abu Al Azm, S. M.; Chelkov, G.; Kozhevnikov, D.; Guskov, A.; Lapkin, A.; Leyva Fabelo, A.; Smolyanskiy, P.; Zhemchugov, A.

    2016-05-01

    The response of the Timepix detector to neon ions with kinetic energy 77 and 158.4 MeV has been studied at the cyclotron U-400M of the JINR Flerov Laboratory of Nuclear Reaction. Sensors produced from gallium arsenide compensated by chromium and from silicon are used for these measurements. While in Timepix detector with Si sensor the well-known so-called "volcano effect" observed, in Timepix detector with GaAs:Cr sensor such effect was completely absent. In the work the behavior of the Timepix detector with GaAs:Cr sensor under irradiation with heavy ions is described in comparison with the detector based on Si sensor. Also the possible reason for absence of "volcano" effect in GaAs:Cr detector is proposed.

  1. Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes

    Science.gov (United States)

    Li, Mengwei; Deng, Tao; Du, Kang; Chu, WeiHang; Liu, Jun; Chen, Houjin; Liu, Zewen

    2016-01-01

    A microaccelerometer based on gallium arsenide (GaAs) resonant-tunneling diodes (RTDs) is demonstrated. The input acceleration signal can be transformed into an output electrical signal using the meso-piezoresistive effects of the RTDs located at the root of the detection beams. Finite element simulations were performed to design, analyze, and optimize the structures of the accelerometer. The accelerometer was fabricated using a combination of GaAs IC surface and bulk micromachining techniques. Vibrating tests and shock tests were conducted to investigate the accelerometer characteristics. The experimental results revealed that the sensitivity of the RTD accelerometer was 7.91 mV/g. The noise resolution was ˜1.264 mg/√Hz, and the working frequency was up to 3 kHz.

  2. Dynamic kirigami structures for integrated solar tracking

    Science.gov (United States)

    Lamoureux, Aaron; Lee, Kyusang; Shlian, Matthew; Forrest, Stephen R.; Shtein, Max

    2015-09-01

    Optical tracking is often combined with conventional flat panel solar cells to maximize electrical power generation over the course of a day. However, conventional trackers are complex and often require costly and cumbersome structural components to support system weight. Here we use kirigami (the art of paper cutting) to realize novel solar cells where tracking is integral to the structure at the substrate level. Specifically, an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched to produce an array of tilted surface elements which can be controlled to within +/-1°. We analyze the combined optical and mechanical properties of the tracking system, and demonstrate a mechanically robust system with optical tracking efficiencies matching conventional trackers. This design suggests a pathway towards enabling new applications for solar tracking, as well as inspiring a broader range of optoelectronic and mechanical devices.

  3. Anomalous magneto-elastic and charge doping effects in thallium-doped BaFe2As2

    OpenAIRE

    Sefat, Athena S.; Li Li; Cao, Huibo B.; McGuire, Michael A.; Brian Sales; Radu Custelcean; David S. Parker

    2016-01-01

    Within the BaFe2As2 crystal lattice, we partially substitute thallium for barium and report the effects of interlayer coupling in Ba1-xTlxFe2As2 crystals. We demonstrate the unusual effects of magneto-elastic coupling and charge doping in this iron-arsenide material, whereby Néel temperature rises with small x, and then falls with additional x. Specifically, we find that Néel and structural transitions in BaFe2As2 (T N  = T s  = 133 K) increase for x = 0.05 (T N  = 138 K, T s  = 140 K) from m...

  4. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Manolopoulos, S.; Bates, R.; Campbell, M.; Snoeys, W.; Heijne, E.; Pernigotti, E.; Raine, C.; Smith, K. E-mail: k.smith@physics.gla.ac.uk; Watt, J.; O' Shea, V.; Ludwig, J.; Schwarz, C

    1999-09-11

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the {omega}3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  5. Pulling the trigger on LHC electronics

    CERN Document Server

    CERN. Geneva

    2001-01-01

    The conditions at CERN's Large Hadron Collider pose severe challenges for the designers and builders of front-end, trigger and data acquisition electronics. A recent workshop reviewed the encouraging progress so far and discussed what remains to be done. The LHC experiments have addressed level one trigger systems with a variety of high-speed hardware. The CMS Calorimeter Level One Regional Trigger uses 160 MHz logic boards plugged into the front and back of a custom backplane, which provides point-to-point links between the cards. Much of the processing in this system is performed by five types of 160 MHz digital applications-specific integrated circuits designed using Vitesse submicron high-integration gallium arsenide gate array technology. The LHC experiments make extensive use of field programmable gate arrays (FPGAs). These offer programmable reconfigurable logic, which has the flexibility that trigger designers need to be able to alter algorithms so that they can follow the physics and detector perform...

  6. Three Photon Absorption in Optical Parametric Oscillators Based on OP-GaAs

    CERN Document Server

    Heckl, Oliver H; Winkler, Georg; Changala, P Bryan; Spaun, Ben; Porat, 1 Gil; Bui, Thinh Q; Lee, Kevin F; Jiang, Jie; Fermann, Martin; Schunemann, Peter G; Ye, Jun

    2016-01-01

    We report on the first singly-resonant (SR), synchronously pumped optical parametric oscillator (OPO) based on orientation-patterned gallium arsenide (OP-GaAs). Together with a doubly resonant (DR) degenerate OPO based on the same OP-GaAs material, the output spectra cover 3 to 6 ${\\mu}$m within ~3 dB of relative power. The DR-OPO has the highest output power reported to date from a femtosecond, synchronously pumped OPO based on OP-GaAs. We discovered strong three photon absorption with a coefficient of 0.35 ${\\pm}$ 0.06 cm${^3}$/GW${^2}$ for our OP-GaAs sample, which limits the output power of these OPOs as mid-IR light sources. We present a detailed study of the three photon loss on the performance of both the SR and DR-OPOs, and compare them to those without this loss mechanism.

  7. Nanostructured semiconductor solar absorbers with near 100% absorption and related light management picture

    Science.gov (United States)

    Li, Yali; Gao, Pingqi; Chen, Qiang; Yang, Jiaming; Li, Junshuai; He, Deyan

    2016-06-01

    Optical behaviors of both polycrystalline silicon (Si) and gallium arsenide (GaAs) nanocone (NC)-capped nanowire (NW) arrays are systematically investigated and a full light management picture is presented. The study demonstrates that compared to shape- and environment-sensitive optical resonance modes, including leaky modes and guided longitudinal resonances, optimization of light harvesting based on light scattering is more operable to guide related device fabrication. Under this consideration, near 100% absorption above the bandgap energy is realized for GaAs NC-capped NW arrays with an effective thickness of only ~1000 nm through balancing antireflection and light scattering in the optical systems. Further study under oblique incidence shows that light absorption for the optimized NC-capped NW arrays is almost insensitive to the incident angle, indicating excellent omnidirectional light management in the NC-capped NW configuration.

  8. Optical and interfacial electronic properties of diamond-like carbon films

    Science.gov (United States)

    Woollam, J. A.; Natarajan, V.; Lamb, J.; Khan, A. A.; Bu-Abbud, G.; Banks, B.; Pouch, J.; Gulino, D. A.; Domitz, S.; Liu, D. C.

    1984-01-01

    Hard, semitransparent carbon films were prepared on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectrocopy, ellipsometry, conductance-capacitance spectroscopy and alpha particle-proton recoil spectroscopy. Preparation techniques include RF plasma decomposition of methane (and other hydrocarbons), ion beam sputtering, and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 10 to the 10th states/eV sq cm per were found.

  9. A simple model of space radiation damage in GaAs solar cells

    Science.gov (United States)

    Wilson, J. W.; Stith, J. J.; Stock, L. V.

    1983-01-01

    A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.

  10. New Class of CW High-Power Diode-Pumped Alkali Lasers (DPALs)

    Energy Technology Data Exchange (ETDEWEB)

    Krupke, W F; Beach, R J; Kanz, V K; Payne, S A; Early, J T

    2004-03-23

    The new class of diode-pumped alkali vapor lasers (DPALs) offers high efficiency cw laser radiation at near-infrared wavelengths: cesium 895 nm, rubidium 795 nm, and potassium 770 nm. The working physical principles of DPALs will be presented. Initial 795 nm Rb and 895 nm Cs laser experiments performed using a titanium sapphire laser as a surrogate pump source demonstrated DPAL slope power conversion efficiencies in the 50-70% range, in excellent agreement with device models utilizing only literature spectroscopic and kinetic data. Using these benchmarked models for Rb and Cs, optimized DPALs with optical-optical efficiencies >60%, and electrical efficiencies of 25-30% are projected. DPAL device architectures for near-diffraction-limited power scaling into the high kilowatt power regime from a single aperture will be described. DPAL wavelengths of operation offer ideal matches to silicon and gallium arsenide based photovoltaic power conversion cells for efficient power beaming.

  11. SETA support for the DARPA microelectronics technology insertion program of the Microelectronics Technology Office

    Science.gov (United States)

    Butler, Daniel H., Jr.

    1992-08-01

    Booz-Allen and Hamilton provides DARPA's Microelectronics Technology Office with a broad range of SETA support under contract MDA972-92-C-0029. This report describes activities during the first quarter of this contract. The main programs supported were: the Digital Gallium Arsenide Insertion Program, the Transition of Optical Processors to Systems (TOPS), the Microelectronics Manufacturing Strategy (MMST) Program, the Flexible, Intelligent Microelectronics Manufacturing Program (FIMM), and the Artificial Neural Networks Technology Program (ANNT). This report is organized by subtask areas in the statement of work, indicating for each subtask the Task Objectives, General Methodology, Technical Results, and Important Findings and Conclusions. The final section of this report presents a summary and conclusions, and appendices present deliverables from Booz-Allen and special consultants providing MTO Support via this contract.

  12. Observed damage during Argon gas cluster depth profiles of compound semiconductors

    International Nuclear Information System (INIS)

    Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10−2 amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye

  13. Observed damage during Argon gas cluster depth profiles of compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Barlow, Anders J., E-mail: anders.barlow@ncl.ac.uk; Portoles, Jose F.; Cumpson, Peter J. [National EPSRC XPS Users' Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

    2014-08-07

    Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10{sup −2} amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

  14. Study on the occurrence of platinum in Xinjie Cu-Ni sulfide deposits by a combination of SPM and NAA

    International Nuclear Information System (INIS)

    A combination of neutron-activation analysis (NAA) and scanning proton microprobe (SPM) was used to study the distribution of platinum-group elements (PGEs) in rocks and ores from Xinjie Cu-Ni deposit. The minimum detection limits of PGEs by NAA had been much improved by means of a nickel-sulfide fire-assay technique for pre-concentration of PGEs in the ore samples. A simple and effective method was developed for true element mapping in SPM experiments. A pair of moveable absorption filters was set up in the target chamber for high sensitivities of both major and trace elements. The bulk analysis results by NNA indicated that the PGE mineralization occurred at the base of Xinjie layered intrusion in clino-pyroxenite rocks and the Cu-Ni sulfide minerals disseminated within the rocks had high abundance level of PGEs. However, the micro-PIXE analysis of the Cu-Ni sulfide mineral grains did not find PGEs above the MDL of (6-9) x 10-6 for Rh, Ru and Pd, and 6- x 10-6 for Pt. The search for platinum occurrence in sulfide minerals was followed by scanning analysis of SPM when some smaller platinum enriched grains were found in the sulfide minerals. The microscopic analysis results suggested that platinum occurred in the Cu-Ni sulfide matrix as independent arsenide mineral grains. The chemical formula of the arsenide sperrylite was PtAs2. The information of the platinum occurrence was helpful to future mineralogical research and mineral processing and beneficiation of the Cu-Ni deposit

  15. Superconducting properties and pseudogap from preformed Cooper pairs in the triclinic (CaFe1-xPtxAs ) 10Pt3As8

    Science.gov (United States)

    Surmach, M. A.; Brückner, F.; Kamusella, S.; Sarkar, R.; Portnichenko, P. Y.; Park, J. T.; Ghambashidze, G.; Luetkens, H.; Biswas, P. K.; Choi, W. J.; Seo, Y. I.; Kwon, Y. S.; Klauss, H.-H.; Inosov, D. S.

    2015-03-01

    Using a combination of muon-spin relaxation (μ SR ) , inelastic neutron scattering (INS), and nuclear magnetic resonance (NMR), we investigated the novel iron-based superconductor with a triclinic crystal structure (CaFe1-xPtxAs ) 10Pt3As8 (Tc=13 K), containing platinum-arsenide intermediary layers. The temperature dependence of the superfluid density obtained from the μ SR relaxation-rate measurements indicates the presence of two superconducting gaps, Δ1≫Δ2 . According to our INS measurements, commensurate spin fluctuations are centered at the (π ,0 ) wave vector, like in most other iron arsenides. Their intensity remains unchanged across Tc, indicating the absence of a spin resonance typical for many Fe-based superconductors. Instead, we observed a peak in the spin-excitation spectrum around ℏ ω0=7 meV at the same wave vector, which persists above Tc and is characterized by the ratio ℏ ω0/kBTc≈6.2 , which is significantly higher than typical values for the magnetic resonant modes in iron pnictides (˜4.3 ) . The temperature dependence of magnetic intensity at 7 meV revealed an anomaly around T*=45 K related to the disappearance of this new mode. A suppression of the spin-lattice relaxation rate, 1 /T1T , observed by NMR immediately below T* without any notable subsequent anomaly at Tc, indicates that T* could mark the onset of a pseudogap in (CaFe1-xPtxAs ) 10Pt3As8 , which is likely associated with the emergence of preformed Cooper pairs.

  16. Structures and properties of ThCr2Si2-type superconductors and related materials

    International Nuclear Information System (INIS)

    Work on this thesis started in 2008, only a few months after the discovery of superconductivity in doped BaFe2As2. The first goal at that time was the investigation of further compounds crystallizing in the ThCr2Si2-type structure with respect to phase transitions, magnetic properties and possible superconductivity. One candidate that seemed to be very similar to BaFe2As2 because of its structural phase transitions, was SrRh2As2. However, a closer look revealed a more complicated and challenging structural chemistry. The first two chapters of this work are devoted to the study and solution of the intriguing crystallographic problems of the three SrRh2As2 phases and the characterization of further ternary rhodium arsenides. Furthermore, high quality single crystals of Ba1-xKxFe2As2 were synthesized and single crystals as well as powder samples of Ba1-xKxFe2As2 were investigated with synchrotron X-ray diffraction methods as described in chapters 5 and 6. Finally, the last part of this thesis concentrates on the question which effects of doping are actually responsible for the occurrence of superconductivity in BaFe2As2. Is the superconductivity induced by the alteration of charge in the FeAs4/4-layer, by the disorder introduced by doping, or by the structural changes? To help elucidate this issue, several substitution series of 122-iron arsenides were prepared and the influence of hole and electron or charge and isoelectronic doping on superconductivity, magnetic and structural properties and their mutual relationship was studied (chapters 7,8,9 and 10).

  17. Multi-stage Ag-Bi-Co-Ni-U and Cu-Bi vein mineralization at Wittichen, Schwarzwald, SW Germany: geological setting, ore mineralogy, and fluid evolution

    Science.gov (United States)

    Staude, Sebastian; Werner, Wolfgang; Mordhorst, Teresa; Wemmer, Klaus; Jacob, Dorrit E.; Markl, Gregor

    2012-03-01

    The Wittichen Co-Ag-Bi-U mining area (Schwarzwald ore district, SW Germany) hosts several unconformity-related vein-type mineralizations within Variscan leucogranite and Permian to Triassic redbeds. The multistage mineralization formed at the intersection of two fault systems in the last 250 Ma. A Permo-Triassic ore stage I with minor U-Bi-quartz-fluorite mineralization is followed by a Jurassic to Cretaceous ore stage II with the main Ag and Co mineralization consisting of several generations of gangue minerals that host the sub-stages of U-Bi, Bi-Ag, Ni-As-Bi and Co-As-Bi. Important ore minerals are native elements, Co and Ni arsenides, and pitchblende; sulphides are absent. The Miocene ore stage III comprises barite with the Cu-Bi sulfosalts emplectite, wittichenite and aikinite, and the sulphides anilite and djurleite besides native Bi, chalcopyrite, sphalerite, galena and tennantite. The mineral-forming fluid system changed from low salinity (<5 wt.% NaCl) at high temperature (around 300°C) in Permian to highly saline (around 25 wt.% NaCl + CaCl2) at lower temperatures (50-150°C) in Triassic to Cretaceous times. Thermodynamic calculations and comparison with similar mineralizations worldwide show that the Mesozoic ore-forming fluid was alkaline with redox conditions above the hematite-magnetite buffer. We suggest that the precipitation mechanism for native elements, pitchblende and arsenides is a decrease in pH during fluid mixing processes. REE patterns in fluorite and the occurrence of Bi in all stages suggest a granitic source of some ore-forming elements, whereas, e.g. Ag, Co and Ni probably have been leached from the redbeds. The greater importance of Cu and isotope data indicates that the Miocene ore stage III is more influenced by fluids from the overlying redbeds and limestones than the earlier mineralization stages.

  18. (CaFeAs){sub 10}Pt{sub z}As{sub 8} superconductors and related compounds

    Energy Technology Data Exchange (ETDEWEB)

    Stuerzer, Tobias

    2015-04-13

    The main topic of this dissertation is the identification of new compounds, structure determination, and substitution dependent investigation of properties in this new branch of the family of iron arsenide superconductors (Chapter 2). Chapter 2.1 presents the identification of the superconducting compounds and the corresponding structure elucidation identifying two dif-ferent species (CaFeAs){sub 10}Pt{sub 3}As{sub 8} and (CaFeAs){sub 10}Pt{sub 4}As{sub 8} in this family (abbreviated as 1038 and 1048 according to their stoichiometry). However, a closer look revealed a more challenging structure chemistry which is covered in Chapter 2.2. The following two Chapters 2.3 and 2.4 are devoted to (CaFeAs){sub 10}Pt{sub 3}As{sub 8} and more detailed investigations on this parent compound of the new superconductor family. Furthermore, transition metal substitution series (CaFe{sub 1-x}M{sub x}As){sub 10}Pt{sub 3}As{sub 8} were synthesized to investigate the resemblance to model systems Ba(Fe{sub 1-x}M{sub x}){sub 2}As{sub x} and LaO(Fe{sub 1-x}M{sub x})As in the scope of structural changes and superconductivity as described in Chapter 2.5. Initially amazing differences in superconducting properties com-paring 1038 and 1048 compounds are analyzed in Chapter 2.6 establishing an universal dop-ing model in the (CaFe{sub 1-x}M{sub x}As){sub 10}Pt{sub z}As{sub 8} family. Additionally substituent dependent properties upon rare earth substitution in electron doped (Ca{sub 1-y}RE{sub y}FeAs){sub 10}Pt{sub 3}As{sub 8} are investigated in Chapter 2.7, while a detailed study of superconducting properties and magnetism in (Ca{sub 1-y}La{sub y}FeAs){sub 10}Pt{sub 3}As{sub 8} by the local μSR technique is presented in Chapter 2.8. In Chapter 2.9 a comparison of direct and electron doping is discussed based on codoping experiments in (Ca{sub 1-y}La{sub y}Fe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8} and (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 4}As{sub 8}. Finally, in Chapter 2

  19. Investigation of the physics potential and detector development for the ILC

    International Nuclear Information System (INIS)

    beam pipe. Due to its location, a lot of beamstrahlung pair particles will hit this calorimeter, representing a challenge for the operational reliability of the sensors under such harsh radiation conditions. We investigated single-crystal and polycrystalline CVD diamond, gallium arsenide and radiation-hard silicon as sensor candidates for their radiation hardness and found that diamond and gallium arsenide are promising. We used a 10 MeV electron beam of few nA to irradiate the samples under investigation up to doses of 5 MGy for diamond, up to about 1.5 MGy for gallium arsenide and up to about 90 kGy for silicon. We measured in regular periods the CCD to characterize the impact of the absorbed dose on the size of the signal, which is generated by electrons of a 90Sr source crossing the sensor. Additional measurements such as the dark current and the CCD as functions of the voltage completed the characterization of the sensor candidates. For the single-crystal CVD diamond, also the termally stimulated current was measured to determine amongst others the defect density created by irradiation. In the diamond samples, evidence for strong polarization effects inside the material was found and investigated in more detail. A phenomenological model based on semi-conductor physics was developed to describe the sensor properties as a function of the applied electric field, the dose and the dose rate. Its predictions were compared with the results of the measurements. Several parameters such as time scales and cross-sections were determined using this model, which led to ongoing investigations. (orig.)

  20. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    International Nuclear Information System (INIS)

    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0±0.3) ps, and the ratio of the Grueneisen parameters was found to be γe / γi = (0.5±0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A1g mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase and its development for excitations close to the

  1. Iron pnictide superconductors

    International Nuclear Information System (INIS)

    The scope of this dissertation therefore has not only been the synthesis of various new superconducting and non-superconducting iron pnictides of several structural families but also their in-depth crystallographic and physical characterisation. In Chapters 3 - 6, the family of the ZrCuSiAs-type (1111) compounds is subject of discussion. The solid solution series La(CoxFe1-x)PO is analysed regarding magnetic and superconducting properties and the new compounds EuMnPF and REZnPO, as well as the new superconductor parent compound SrFeAsF are presented. Chapters 7 - 9 are dedicated to the new iron arsenide superconductors of the ThCr2Si2-type (122 family). Therein, also the discovery of the first superconductor in this structural family, Ba0.6K0.4Fe2As2, is unveiled. A detailed examination of the complete solid solution series (Ba1-xKx)Fe2As2 is presented. Moreover, the crystallographic phase transitions of the closely related compounds SrFe2As2 and EuFe2As2 are characterised and the superconductors Sr1-xKxFe2As2 and Ca1-xNaxFe2As2 are examined for magnetic and phononic excitations. In Chapter 10, the redetermined crystal structure of the superconductor Fe(Se1-xTex) (11-type) is presented from a chemist's point of view. Chapters 11 - 14 look into the superconducting and non-superconducting iron arsenides of more complex structural families (32522-type and 21311-type). Therein, crystallographic and magnetic details of Sr3Sc2O5Fe2As2 are presented and Ba2ScO3FeAs and Sr2CrO3FeAs, the first two members of the new 21311-type are portrayed. Sr2CrO3FeAs is looked at in close detail with various methods, so e.g. the spin structure of the magnetically ordered compound is solved and a possible reason for the absence of superconductivity in this compound is given. Finally, the superconductor Sr2VO3FeAs is scrutinised and necessary prerequisites for superconductivity in this compound are suggested. (orig.)

  2. Orogenic-type copper-gold-arsenic-(bismuth) mineralization at Flatschach (Eastern Alps), Austria

    Science.gov (United States)

    Raith, Johann G.; Leitner, Thomas; Paar, Werner H.

    2015-10-01

    Structurally controlled Cu-Au mineralization in the historic Flatschach mining district (Styria, Austria) occurs in a NE-SW to NNE-WSW oriented vein system as multiple steep-dipping calcite-(dolomite)-quartz veins in amphibolite facies metamorphic rocks (banded gneisses/amphibolites, orthogneisses, metagranitoids) of the poly-metamorphosed Austroalpine Silvretta-Seckau nappe. Vein formation postdated ductile deformation events and Eoalpine (Late Cretaceous) peak metamorphism but predated Early to Middle Miocene sediment deposition in the Fohnsdorf pull-apart basin; coal-bearing sediments cover the metamorphic basement plus the mineralized veins at the northern edge of the basin. Three gold-bearing ore stages consist of a stage 1 primary hydrothermal (mesothermal?) ore assemblage dominated by chalcopyrite, pyrite and arsenopyrite. Associated minor minerals include alloclasite, enargite, bornite, sphalerite, galena, bismuth and matildite. Gold in this stage is spatially associated with chalcopyrite occurring as inclusions, along re-healed micro-fractures or along grain boundaries of chalcopyrite with pyrite or arsenopyrite. Sericite-carbonate alteration is developed around the veins. Stage 2 ore minerals formed by the replacement of stage 1 sulfides and include digenite, anilite, "blue-remaining covellite" (spionkopite, yarrowite), bismuth, and the rare copper arsenides domeykite and koutekite. Gold in stage 2 is angular to rounded in shape and occurs primarily in the carbonate (calcite, Fe-dolomite) gangue and less commonly together with digenite, domeykite/koutekite and bismuth. Stage 3 is a strongly oxidized assemblage that includes hematite, cuprite, and various secondary Cu- and Fe-hydroxides and -carbonates. It formed during supergene weathering. Stage 1 and 2 gold consists mostly of electrum (gold fineness 640-860; mean = 725; n = 46), and rare near pure gold (fineness 930-940; n = 6). Gold in stage 3 is Ag-rich electrum (fineness 350-490, n = 12), and has a

  3. Crystal chemical aspects of superconductivity in BaFe2As2 and related compounds

    Science.gov (United States)

    Johrendt, Dirk

    2010-03-01

    BaFe2As2 is the parent compound of the 122-type iron arsenides.^1 Superconductivity can be induced by several kinds of doping^2-4 or by pressure.^5 It is widely accepted that superconductivity in iron arsenides is unconventional and a number of experiments agree with the s±-scenario.^6 The latter relies on Fermi surface nesting which depends on both the electron count and the lattice. However, the coincidence of doping and pressure effects on the structure of BaFe2As2 supports the role of the structure.^7 Another open issue is the co-existence of superconductivity and AF magnetic ordering. Our ^57Fe-M"ossbauer experiments with underdoped Ba0.8K0.2Fe2As2 (Tc = 24 K) revealed full magnetic splitting, which indicates such a co-existence.^8 Compounds like Sr2VO3FeAs (Tc = 37-45 K) are promising candidates for higher Tc, but their crystal chemistry is not yet understood. In non-superconducting Sr2CrO3FeAs, we have detected a non-stoichiometry of the Fe-site (Fe0.93(1)Cr0.07(1)) and C-type AF ordering of the Cr^3+-layers.^9 The Cr-doping of the FeAs layer is probably detrimental to superconductivity in Sr2CrO3FeAs, but a similar non-stoichiometry may play a vital role in Sr2VO3FeAs.-^1 M. Rotter, M. Tegel, I. Schellenberg, et al., Phys. Rev. B 78, 020503 (2008).^2 M. Rotter, M. Tegel, and D. Johrendt, Phys. Rev. Lett. 101, 107006 (2008).^3 S. Jiang, C. Wang, Z. Ren, et al., J. Phys.: Condens. Matter 21, 382203 (2009).^4 A. S. Sefat, R. Jin, M. A. McGuire, et al., Phys. Rev. Lett. 101, 117004 (2008).^5 P. L. Alireza, Y. T. C. Ko, J. Gillett, et al., J. Phys.: Condens. Matter 21, 012208 (2009).^6 I. Mazin, D. J. Singh, M. D. Johannes, et al., Phys. Rev. Lett. 101, 057003 (2008).^7 M. Rotter, M. Pangerl, M. Tegel, et al., Angew. Chem. Int. Ed. 47, 7949 (2008).^8 M. Rotter, M. Tegel, I. Schellenberg, et al., New J. Phys. 11, 025014 (2009).^9 M. Tegel, Y. Su, F. Hummel, et al., arXiv0911.0450.

  4. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    Energy Technology Data Exchange (ETDEWEB)

    Nicoul, Matthieu

    2010-09-01

    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0{+-}0.3) ps, and the ratio of the Grueneisen parameters was found to be {gamma}{sub e} / {gamma}{sub i} = (0.5{+-}0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A{sub 1g} mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase

  5. 1983 Annual progress report

    International Nuclear Information System (INIS)

    This report is concerned with the whole activities of the LETI (Laboratoire d'Electronique et de Technologie de l'Informatique) during 1983. They defined three sections wich are ''materials'', ''electronic components'' and the one called ''instrumentation and systems''. Among the magnetic materials, materials for magnetic bubble memories are concerned. Among semi-conductor materials, first, crystals of gallium arsenide and germanium are peculiarly studied; then researches on crystal growth processes aim at deposition of zinc or cadmium sulfide thin layers in aqueous solutions; and, finally, piezoelectric material researches consisted essentially in developing fabrication processes of lithium niobiate. Materials for infra-red devices are also studied together with materials related to optical microstructures (LNA, MgF2, LiYF4). The section ''Components'' comprises silicium microelectronics (ionic implantation techniques, MOS systems, etc), the magnetic bubble memories, the components related to integrated circuits for infrared imaging or to Josephson effect devices. Display, sensors, optical telecommunications, wiring terminations are also concerned. Physics and medicine instrumentation (magnetometry, time-of-flight positon tomography, X-ray tomography, NMR spectrometry in-vivo), robotics and technology of acquisition and processing of images (in view of an automatic control) are activities of the last section

  6. Optical Links for the ATLAS Pixel Detector

    CERN Document Server

    Gregor, Ingrid-Maria

    In der vorliegenden Dissertation wird eine strahlentolerante optische Datenstrecke mit hoher Datenrate für den Einsatz in dem Hochenergiephysikexperiment Atlas am Lhc Beschleuniger entwickelt. Da die Lhc-Experimente extremen Strahlenbelastungen ausgesetzt sind, müssen die Komponenten spezielle Ansprüche hinsichtlich der Strahlentoleranz erfüllen. Die Qualifikation der einzelnen Bauteile wurde im Rahmen dieser Arbeit durchgeführt. Die zu erwartenden Fluenzen im Atlas Inner Detector für Silizium und Gallium Arsenid (GaAs) wurden berechnet. Siliziumbauteile werden einer Fluenz von bis zu 1.1.1015neq /cm2 in 1 MeV äquivalenten Neutronen ausgesetzt sein, wohingegen GaAs Bauteile bis zu 7.8.1015neq /cm2 ausgesetzt sein werden. Die Strahlentoleranz der einzelnen benötigten Komponenten wie z.B. der Laserdioden sowie der jeweiligen Treiberchips wurde untersucht. Sowohl die Photo- als auch die Laserdioden haben sich als strahlentolerant für die Fluenzen an dem vorgesehenen Radius erwiesen. Aus de...

  7. Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

    Science.gov (United States)

    Davidson, Frederic; Sun, Xiaoli

    1989-01-01

    Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

  8. A novel dual-band terahertz metamaterial modulator

    Science.gov (United States)

    Min, Wenchao; Sun, Hao; Zhang, Qilian; Ding, Huifeng; Shen, Wei; Sun, Xiaowei

    2016-06-01

    This paper presents a novel terahertz (THz) dual-band metamaterial modulator on a gallium arsenide (GaAs) substrate with an n-type GaAs epitaxial layer. By adopting split strips of two different lengths in one cell of metamaterial structure, the metamaterial can resonate at 0.58 THz and 1.0 THz. The electric-controlled depletion region of Schottky contacts is numerically analyzed to explain the mechanism of modulator and estimate the modulation depths. The measurements show that the modulation depths at the resonant frequencies (0.61 THz and 1.03 THz) can reach 50% and 85% under an inverse bias of 17 V in good agreement with simulations. The surface plasmons are utilized to explain the difference of modulation depths at two bands, and the tri-band modulator is also discussed for the scalability of the metamaterial structure. The presented dual-band modulator can help to design THz modulators with multi-band modulations and high modulation depths.

  9. CdTe film structure formation in layerwise component sorption

    Energy Technology Data Exchange (ETDEWEB)

    Murashev, S.V.; Denisova, A.T.; Ezhovskii, Yu.K.

    1988-04-10

    Aleskovskii's insular hypothesis has been used in a new approach to film synthesis, where irreversible reactions occur at surfaces on sequential component treatment, where the components contain the compound units. One can synthesize a film of a strictly defined composition on the basis of the critical condensation temperatures T/sub A/ and T/sub B/ together with the compound decomposition temperature T/sub AB/, i.e., it is necessary to have T/sub A/, T/sub B/ < T/sub s/ < T/sub AB/, where T/sub s/ is substrate temperature. The authors used AGChT-23-17 single-crystal gallium arsenide substrates having (100) orientation. Films up to 15 nm thick were measured by ellipsometry, while thicker films were assessed with an interferometer. The cadmium telluride films were made by alternating treatment in cadmium and tellurium beams made by evaporation from Knudsen cells. The lower limit to monolayer growth is set by the onset of tellurium condensation, and the upper by the transition from irreversible chemisorption to reversible. The growth constant and the diffraction data indicate the mode of film formation, the growth direction, and the relationship to the structure, which is related to the temperature. Films with the best structure are made at substrate temperatures of 498-535 K.

  10. Beam lead quartz chips for superconducting millimeter-wave circuits

    Science.gov (United States)

    Bass, Robert B.; Zhang, Jian Z.; Bishop, William L.; Lichtenberger, Arthur W.; Pan, Shing-Kuo

    2003-02-01

    The assembly of superconducting millimeter and submillimeter-wave circuits often requires RF ground connections. These are usually made by soldering, wire bonding, conductive adhesive or conductive wire gaskets. The difficulty of assembly increases with frequency as chip dimensions and tolerances shrink. The assembly issues, and also the throughput requirements of large radio astronomy projects such as ALMA (Atacama Large Millimeter Array), suggest the need of a beam lead technology for these circuits. Beam lead processes are already established for silicon and gallium arsenide wafers. However, niobium circuits on quartz substrates present unique difficulties. SIS junctions introduce additional thermal and chemical constraints to process development. For quartz, wet etches are isotropic and dry etches with high etch rates require large ion energies. Therefore, it is difficult to develop a conventional process in which gold pads on the substrate surface are formed into beam leads by a backside etch. Instead we have developed a topside process in which, after the mixer circuits are completed, dicing cuts are made at the finished chip dimensions but only partly through the wafer. The dicing cuts are then filled with a sacrificial material in a non-CMP process, and planarized. Gold plated pads are then defined, overhanging the planarized cuts. The sacrificial material is then removed from these cuts, leaving the gold beam leads. The wafer is then backside lapped into the cuts to the desired thickness, separating the individual chips. We discuss the new planarization scheme developed for this beam lead process and compare a variety of sacrificial materials.

  11. Synthesis, crystal structure and magnetism of Eu{sub 3}Sc{sub 2}O{sub 5}Fe{sub 2}As{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hummel, Franziska; Johrendt, Dirk [Ludwig-Maximilians-Universitaet Muenchen (Germany). Dept. Chemie; Tegel, Marcus [Fraunhofer-Institut fuer Fertigungstechnik und Angewandte Materialforschung (IFAM), Dresden (Germany); Gerke, Birgit; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2015-11-01

    The iron arsenide Eu{sub 3}Fe{sub 2}O{sub 5}Fe{sub 2}As{sub 2} was synthesized at 1173-1373 K in a resistance furnace and characterized by X-ray powder diffraction with Rietveld analysis: Sr{sub 3}Fe{sub 2}O{sub 5}Cu{sub 2}S{sub 2} type, I4/mmm, a = 406.40(1) pm, c = 2646.9(1) pm. Layers of edge-sharing FeAs{sub 4/4} tetrahedra are separated by perovskite-like oxide blocks. No structural transition occurs in the temperature range from 10 to 300 K. Magnetic measurements have revealed Curie-Weiss behavior with an effective magnetic moment of 7.79 μ{sub B} per europium atom in agreement with the theoretical value of 7.94 μ{sub B} for Eu{sup 2+}. A drop in the magnetic susceptibility at 5 K indicates possible antiferromagnetic ordering. {sup 151}Eu and {sup 57}Fe Moessbauer spectroscopic measurements have confirmed a beginning cooperative magnetic phenomenon by showing significantly broadened spectra at 4.8 K compared to those at 78 K.

  12. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Abdulsattar, Mudar Ahmed, E-mail: mudarahmed3@yahoo.com [Ministry of Science and Technology, Baghdad (Iraq); Hussein, Mohammed T.; Hameed, Hadeel Ali [Department of Physics, College of Science, University of Baghdad, Baghdad (Iraq)

    2014-12-15

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm{sup -1}) compared to experimental 0.035 eV (285.2 cm{sup -1}). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  13. Low-level laser therapy: Case-control study in dogs with sterile pyogranulomatous pododermatitis

    Directory of Open Access Journals (Sweden)

    Roberta Perego

    2016-08-01

    Full Text Available Aim: Low-level laser therapy (LLLT is a therapeutic photobiostimulation with properties in reducing swelling, inflammation, and promoting tissue healing. The objective of this pilot study was to evaluate LLLT in sterile pyogranulomatous pododermatitis in five dogs. Materials and Methods: In each dog, one lesion was designated as the control (treated with a 0.0584% hydrocortisone aceponate spray, and one or more other lesions were treated with a gallium aluminum arsenide-laser, daily for 5 days. Lesions were scored before treatment (D0, at the end (D4, 16 days after the last laser treatment (D20, and after 2 months (D65. Results: Comparing the treated lesion group with the control lesion group, the clinical score was similar at D0, whereas there was a statistically significant difference at D4 and D20; in the treated group over time, there was a statistically significant improvement between D0, D4, and D20. Lesion recurrence was absent in more than 50% of the treated lesions at D65. No adverse reactions were reported. Conclusion: Given the positive results of this first clinical study, it would be interesting to extend the study to confirm the validity of this type of therapy in sterile pyogranulomatous pododermatitis in the dog.

  14. Synthesis, crystal structure and magnetism of Eu3Sc2O5Fe2As2

    International Nuclear Information System (INIS)

    The iron arsenide Eu3Fe2O5Fe2As2 was synthesized at 1173-1373 K in a resistance furnace and characterized by X-ray powder diffraction with Rietveld analysis: Sr3Fe2O5Cu2S2 type, I4/mmm, a = 406.40(1) pm, c = 2646.9(1) pm. Layers of edge-sharing FeAs4/4 tetrahedra are separated by perovskite-like oxide blocks. No structural transition occurs in the temperature range from 10 to 300 K. Magnetic measurements have revealed Curie-Weiss behavior with an effective magnetic moment of 7.79 μB per europium atom in agreement with the theoretical value of 7.94 μB for Eu2+. A drop in the magnetic susceptibility at 5 K indicates possible antiferromagnetic ordering. 151Eu and 57Fe Moessbauer spectroscopic measurements have confirmed a beginning cooperative magnetic phenomenon by showing significantly broadened spectra at 4.8 K compared to those at 78 K.

  15. Strong interplay between stripe spin fluctuations, nematicity and superconductivity in FeSe.

    Science.gov (United States)

    Wang, Qisi; Shen, Yao; Pan, Bingying; Hao, Yiqing; Ma, Mingwei; Zhou, Fang; Steffens, P; Schmalzl, K; Forrest, T R; Abdel-Hafiez, M; Chen, Xiaojia; Chareev, D A; Vasiliev, A N; Bourges, P; Sidis, Y; Cao, Huibo; Zhao, Jun

    2016-02-01

    In iron-based superconductors the interactions driving the nematic order (that breaks four-fold rotational symmetry in the iron plane) may also mediate the Cooper pairing. The experimental determination of these interactions, which are believed to depend on the orbital or the spin degrees of freedom, is challenging because nematic order occurs at, or slightly above, the ordering temperature of a stripe magnetic phase. Here, we study FeSe (ref. )-which exhibits a nematic (orthorhombic) phase transition at Ts = 90 K without antiferromagnetic ordering-by neutron scattering, finding substantial stripe spin fluctuations coupled with the nematicity that are enhanced abruptly on cooling through Ts. A sharp spin resonance develops in the superconducting state, whose energy (∼4 meV) is consistent with an electron-boson coupling mode revealed by scanning tunnelling spectroscopy. The magnetic spectral weight in FeSe is found to be comparable to that of the iron arsenides. Our results support recent theoretical proposals that both nematicity and superconductivity are driven by spin fluctuations. PMID:26641018

  16. Hard x-ray broad band Laue lenses (80 - 600 keV): building methods and performances

    CERN Document Server

    Virgilli, E; Rosati, P; Liccardo, V; Squerzanti, S; Carassiti, V; Caroli, E; Auricchio, N; Stephen, J B

    2015-01-01

    We present the status of the laue project devoted to develop a technology for building a 20 meter long focal length Laue lens for hard x-/soft gamma-ray astronomy (80 - 600 keV). The Laue lens is composed of bent crystals of Gallium Arsenide (GaAs, 220) and Germanium (Ge, 111), and, for the first time, the focusing property of bent crystals has been exploited for this field of applications. We show the preliminary results concerning the adhesive employed to fix the crystal tiles over the lens support, the positioning accuracy obtained and possible further improvements. The Laue lens petal that will be completed in a few months has a pass band of 80 - 300 keV and is a fraction of an entire Laue lens capable of focusing X-rays up to 600 keV, possibly extendable down to 20 - 30 keV with suitable low absorption crystal materials and focal length. The final goal is to develop a focusing optics that can improve the sensitivity over current telescopes in this energy band by 2 orders of magnitude.

  17. Octave-wide frequency comb centered at 4 μm based on a subharmonic OPO with Hz-level relative comb linewidth

    Science.gov (United States)

    Smolski, V. O.; Xu, J.; Schunemann, P. G.; Vodopyanov, K. L.

    2016-03-01

    We study coherence properties of a more-than-octave-wide (2.6-7.5 μm) mid-IR frequency comb based on a 2-μm Tmfiber- laser-pumped degenerate (subharmonic) optical parametric oscillator (OPO) that uses orientation-patterned gallium arsenide (OP-GaAs) as gain element. By varying intracavity dispersion, we observed a 'phase' transition from a singlecomb state (at exactly OPO degeneracy) to a two-comb state (near-degenerate operation), characterized by two spectrally overlapping combs (signal and idler) with distinct carrier-envelope offset frequencies. We achieve this by generating a supercontinuum (SC) from the mode-locked Tm laser that spans most of the near-IR range, and observing RF beats between the SC and parasitic sum-frequency light (pump + OPO) that also falls into the near-IR. We found RF linewidth to be average power and high (up to 90%) pump depletion make this comb source very attractive for numerous applications including trace molecular detection and chemical sensing with massively parallel spectral data acquisition.

  18. Triple-bond reactivity of an AsP complex intermediate: synthesis stemming from molecular arsenic, As(4).

    Science.gov (United States)

    Spinney, Heather A; Piro, Nicholas A; Cummins, Christopher C

    2009-11-11

    While P(4) is the stable molecular form of phosphorus, a recent study illustrated the possibility of P(2) generation for reactions in organic media under mild conditions. The heavier group 15 element arsenic can exist as As(4) molecules, but As(4) cannot be stored as a pure substance because it is both light-sensitive and reverts thermally to its stable, metallic gray form. Herein we report As(4) activation giving rise to a mu-As(2) diniobium complex, serving in turn as precursor to a terminal arsenide anion complex of niobium. Functionalization of the latter provides the new AsPNMes* ligand, which when complexed with tungsten pentacarbonyl elicits extrusion of the (AsP)W(CO)(5) molecule as a reactive intermediate. Trapping reactions of the latter with organic dienes are found to furnish double Diels-Alder adducts in which the AsP unit is embedded in a polycyclic organic framework. Thermal generation of (AsP)W(CO)(5) in the presence of the neutral terminal phosphide complex P identical withMo(N[(i)Pr]Ar)(3) leads to the cyclo-AsP(2) complex (OC)(5)W(cyclo-AsP(2))Mo(N[(i)Pr]Ar)(3). The (AsP)W(CO)(5) trapping products were crystallized and characterized by X-ray diffraction methods, and computational methods were applied for analysis of the As-As and As-P bonds in the complexes. PMID:19842699

  19. Theoretical prediction of the structural and electronic properties of pseudocubic X3As4 (X=C, Si, Ge and Sn) compounds

    International Nuclear Information System (INIS)

    The structural and electronic properties of X3As4 (X=C, Si, Ge and Sn) compounds were investigated using density functional theory (DFT) calculations. We employed both the generalized-gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy and the Engel-Vosko (EV-GGA) formalism, which optimizes the corresponding potential for band structure calculations. The calculated lattice constant, bulk modulus and electronic band structure of pseudocubic X3As4 (X=C, Si, Ge and Sn) compounds are in good agreement with other theoretical results. The analysis shows that the hardest material is C3As4 compound with a bulk modulus B0=106.5 GPa, while Si3As4, Ge3As4 and Sn3As4 have almost the same bulk modulus ranging from 51 to 68.5 GPa. Also we have presented the results of cohesive energies and we have given a detail discussion of the bond lengths and bond angles in the pseudocubic phase of group IV arsenides. Furthermore, band structure and density of states calculations show that Si3As4, Ge3As4 and Sn3As4 exhibit a semiconductor behavior with indirect gaps while C3As4 exhibit a metallic behavior using both GGA and EV-GGA.

  20. Monte Carlo simulation for the electron cascade due to gamma rays in semiconductor radiation detectors

    International Nuclear Information System (INIS)

    A Monte Carlo code was developed for simulating the electron cascade in radiation detector materials. The electron differential scattering cross sections were derived from measured electron energy-loss and optical spectra, making the method applicable for a wide range of materials. The detector resolution in a simplified model system shows dependence on the bandgap, the plasmon strength and energy, and the valence band width. In principle, these parameters could be optimized to improve detector performance. The intrinsic energy resolution was calculated for three semiconductors: silicon (Si), gallium arsenide (GaAs), and zinc telluride (ZnTe). Setting the ionization thresholds for electrons and holes is identified as a critical issue, as this strongly affects both the average electron-hole pair energy w and the Fano factor F. Using an ionization threshold from impact ionization calculations as an effective bandgap yields pair energies that are well matched to measured values. Fano factors of 0.091 (Si), 0.100 (GaAs), and 0.075 (ZnTe) were calculated. The Fano factor calculated for silicon using this model was lower than some results from past simulations and experiments. This difference could be attributed to problems in simulating inter-band transitions and the scattering of low-energy electrons.