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Sample records for benign silicon solar

  1. Environmentally benign silicon solar cell manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

    1998-09-01

    The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

  2. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  3. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  4. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  5. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  6. Silicon solar cells: Physical metallurgy principles

    Science.gov (United States)

    Mauk, Michael G.

    2003-05-01

    This article reviews the physical metallurgy aspects of silicon solar cells. The production of silicon solar cells relies on principles of thermochemical extractive metallurgy, phase equilibria, solidification, and kinetics. The issues related to these processes and their impact on solar cell performance and cost are discussed.

  7. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  8. ELECTRON BOMBARDMENT OF SILICON SOLAR CELLS,

    Science.gov (United States)

    DAMAGE, ELECTRON IRRADIATION, SOLAR CELLS , SILICON, PHOTOELECTRIC CELLS(SEMICONDUCTOR), QUARTZ, GLASS, SHIELDING, CRYSTAL DEFECTS, HEAT TREATMENT, ARTIFICIAL SATELLITES, SPACECRAFT, GRAPHICS, GRAPHICS.

  9. Silicon Carbide Solar Cells Investigated

    Science.gov (United States)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  10. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  11. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  12. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  13. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  14. Black Silicon Solar Cells with Black Ribbons

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io;

    2016-01-01

    We present the combination of mask-less reactive ion etch (RIE) texturing and blackened interconnecting ribbons as a method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon made by mask-less reactive ion etching has total, average...... reflectance below 0.5% across a 156x156 mm2 silicon (Si) wafer. Black interconnecting ribbons were realized by oxidizing copper resulting in reflectance below 3% in the visible wavelength range. Screen-printed Si solar cells were realized on 156x156 mm2 black Si substrates with resulting efficiencies...... in the range 15.7-16.3%. The KOH-textured reference cell had an efficiency of 17.9%. The combination of black Si and black interconnecting ribbons may result in aesthetic, all-black panels based on conventional, front-contacted silicon solar cells....

  15. Silicon heterojunction solar cell and crystallization of amorphous silicon

    Science.gov (United States)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since they use less materials resulting in lower cost. Polycrystalline silicon (poly-Si) is one promising thin-film material. It has the potential advantages to not only retain the performance and stability of c

  16. Towards stable silicon nanoarray hybrid solar cells.

    Science.gov (United States)

    He, W W; Wu, K J; Wang, K; Shi, T F; Wu, L; Li, S X; Teng, D Y; Ye, C H

    2014-01-16

    Silicon nanoarray hybrid solar cells benefit from the ease of fabrication and the cost-effectiveness of the hybrid structure, and represent a new research focus towards the utilization of solar energy. However, hybrid solar cells composed of both inorganic and organic components suffer from the notorious stability issue, which has to be tackled before the hybrid solar cells could become a viable alternative for harvesting solar energy. Here we show that Si nanoarray/PEDOT:PSS hybrid solar cells with improved stability can be fabricated via eliminating the water inclusion in the initial formation of the heterojunction between Si nanoarray and PEDOT:PSS. The Si nanoarray hybrid solar cells are stable against rapid degradation in the atmosphere environment for several months without encapsulation. This finding paves the way towards the real-world applications of Si nanoarray hybrid solar cells.

  17. Towards upconversion for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    de Wild, J.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Meijerink, A. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Condensed Matter and Interfaces, P.O. Box 80000, 3508 TA Utrecht (Netherlands); van Sark, W.G.J.H.M. [Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands)

    2010-11-15

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter {beta}-NaYF{sub 4}:Yb{sup 3+}(18%) Er{sup 3+}(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 {mu}A/cm{sup 2} was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (author)

  18. Three-Terminal Amorphous Silicon Solar Cells

    OpenAIRE

    Cheng-Hung Tai; Chu-Hsuan Lin; Chih-Ming Wang; Chun-Chieh Lin

    2011-01-01

    Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si...

  19. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  20. High-flux solar furnace processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R.; Landry, M.D.; Menna, P.; Bingham, C.E.; Lewandowski, A.; Ciszek, T.F. [National Renewable Energy Laboratory, Golden, CO (United States)

    1996-06-10

    We used a 10-kW, high-flux solar furnace (HFSF) to diffuse the front-surface n{sup +}-p junction and the back-surface p-p{sup +} junction of single-crystal silicon solar cells in one processing step. We found that all of these HFSF-processed cells have better conversion efficiencies than control cells of identical structures fabricated by conventional furnace diffusion methods. We also used the HFSF to crystallize a-Si:H thin films on glass, to texture crystalline silicon surfaces, to deposit gold contacts on silicon wafers, and to getter impurities from metallurgical grade silicon. HFSF processing offers several advantages over conventional furnace processing: (1) it provides a cold-wall process, which reduces contamination; (2) temperature versus time profiles can be precisely controlled; (3) wavelength, intensity, and spatial distribution of the incident solar flux can be controlled and changed rapidly; (4) a number of high-temperature processing steps can be performed simultaneously; and (5) combined quantum and thermal effects may benefit overall cell performance. We conclude that HFSF processing of silicon solar cells has the potential to improve cell efficiency, reduce cell fabrication costs, and also be an environmentally friendly manufacturing method. We have also demonstrated that the HFSF can be used to achieve solid-phase crystallization of a-Si:H at very high speed

  1. Silicon Purification by a New Type of Solar Furnace

    Institute of Scientific and Technical Information of China (English)

    CHEN Ying-Tian; LIM Chern-Sing; HO Tso-Hsiu; LIM Boon-Han; WANG Yi-Nan

    2009-01-01

    We propose a new method to reveal a direct transformation from solar energy to solar electricity. Instead of using electricity in the process, we use concentrated solar rays with a crucibleless process to upgrade metallurgical silicon into solar-grade silicon feedstock.

  2. Core-shell silicon nanowire solar cells.

    Science.gov (United States)

    Adachi, M M; Anantram, M P; Karim, K S

    2013-01-01

    Silicon nanowires can enhance broadband optical absorption and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown by vapor-liquid-solid method are attractive because they can be grown on low-cost substrates such as glass, and are large area compatible. Here, we experimentally demonstrate that an array of disordered silicon nanowires surrounded by a thin transparent conductive oxide has both low diffuse and specular reflection with total values as low as nanowire facilitates enhancement in external quantum efficiency using two different active shell materials: amorphous silicon and nanocrystalline silicon. As a result, the core-shell nanowire device exhibits a short-circuit current enhancement of 15% with an amorphous Si shell and 26% with a nanocrystalline Si shell compared to their corresponding planar devices.

  3. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  4. Optical models for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, T.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

    1995-08-01

    Light trapping is an important design feature for high-efficiency silicon solar cells. Because light trapping can considerably enhance optical absorption, a thinner substrate can be used which, in turn, can lower the bulk carrier recombination and concommitantly increase open-circuit voltage, and fill factor of the cell. The basic concepts of light trapping are similar to that of excitation of an optical waveguide, where a prism or a grating structure increases the phase velocity of the incoming optical wave such that waves propagated within the waveguide are totally reflected at the interfaces. Unfortunately, these concepts break down because the entire solar cell is covered with such a structure, making it necessary to develop new analytical approaches to deal with incomplete light trapping in solar cells. This paper describes two models that analyze light trapping in thick and thin solar cells.

  5. Origami-enabled deformable silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

    2014-02-24

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

  6. Silicon nitride film for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El amrani, A.; Menous, I.; Mahiou, L.; Touati, A.; Lefgoum, A. [Silicon Technology Unit. 2, Boulevard Frantz Fanon, BP 140 Alger-7 Merveilles, 16200 Algiers (Algeria); Tadjine, R. [Advanced Technologies Development Centre, Cite 20 Aout 1656, Baba hassen, Algiers (Algeria)

    2008-10-15

    In this work, our aim was to determine the deposition parameters leading to optimal optical properties of Silicon nitride (SiN) film for photovoltaic application. The deposition was performed in an industrial pulsed direct-PECVD using a gas mixture of NH{sub 3}/SiH{sub 4}. After defining the optimum deposition parameters, we have chemically evaluated the film quality in BOE solution. Plasma removal of the optimized SiN films from multicrystalline 4-in solar cells allows highlighting and estimating the emitter passivation and ARC effects on the solar cell electrical performance. (author)

  7. High efficiency silicon solar cell review

    Science.gov (United States)

    Godlewski, M. P. (Editor)

    1975-01-01

    An overview is presented of the current research and development efforts to improve the performance of the silicon solar cell. The 24 papers presented reviewed experimental and analytic modeling work which emphasizes the improvment of conversion efficiency and the reduction of manufacturing costs. A summary is given of the round-table discussion, in which the near- and far-term directions of future efficiency improvements were discussed.

  8. A review of high-efficiency silicon solar cells

    Science.gov (United States)

    Rohatgi, A.

    1986-01-01

    Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

  9. A Cost Roadmap for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

    2016-01-01

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  10. Low cost silicon-on-ceramic photovoltaic solar cells

    Science.gov (United States)

    Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

    1980-01-01

    A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

  11. Stability of deuterated amorphous silicon solar cells

    CERN Document Server

    Munyeme, G; Van der Meer, L F G; Dijkhuis, J I; Van der Weg, W F; Schropp, R

    2004-01-01

    In order to elucidate the microscopic mechanism for the earlier observed enhanced stability of deuterated amorphous silicon solar cells we conducted a side by-side study of fully deuterated intrinsic layers on crystalline silicon substrates using the free-electron laser facility at Nieuwegein (FELIX) to resonantly excite the Si-D stretching vibration and measure the various relaxation channels available to these modes, and of p-i-n solar cells with identical intrinsic absorber layers on glass/TCO substrates to record the degradation and stabilization of solar cell parameters under prolonged light soaking treatments. From our comparative study it is shown that a-Si:D has a superior resistance against light-induced defect creation as compared to a-Si:H and that this can now be explained in the light of the 'H collision model' since the initial step in the process, the release of H, is more likely than that of D. Thus, a natural explanation for the stability as observed in a-Si:D solar cells is provided.

  12. Silicon materials task of the low-cost solar-array project. Effect of impurities and processing on silicon solar cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Hanes, M.H.; Rai-Choudhury, P.; Mollenkopf, H.C.

    1982-02-01

    The object of the program has been to investigate the effects of various processes, metal contaminants, and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study has encompassed topics such as thermochemical (gettering) treatments, base-doping concentration, base-doping type (n vs. p), grain boundary-impurity interaction in polycrystalline devices, and long-term effects of impurities and impurity impacts on high-efficiency cells, as well as a preliminary evaluation of some potential low-cost silicon materials. The effects have been studied of various metallic impurities, introduced singly or in combination into Czochralski, float zone, and polycrystalline silicon ingots and into silicon ribbons grown by the dendritic web process. The solar cell data indicate that impurity-induced performance loss is caused primarily by a reduction in base diffusion length. An analytical model based on this observation has been developed and verified experimentally for both n- and p-base material. Studies of polycrystalline ingots containing impurities indicate that solar cell behavior is species sensitive and that a fraction of the impurities are segregated to the grain boundaries. HCl and POCl gettering improve the performance of single-crystal solar cells containing Fe, Cr, and Ti. In contrast Mo-doped material is barely affected. The efficiencies of solar cells fabricated on impurity-doped wafers is lower when the front junction is formed by ion implantation than when conventional diffusion techniques are used. For most impurity-doped solar cells stability is expected for projected times beyond 20 years. Feedstock impurity concentrations below one part per million for elements like V, or 100 parts per million for more benign impurities like Cu or Ni, will be required.

  13. High-flux solar furnace processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R.; Landry, M.D.; Bingham, C.E.; Lewandowski, A.; Ciszek, T.F. [National Renewable Energy Lab., Golden, CO (United States)

    1994-12-31

    The authors used a 10-kW high-flux solar furnace (HFSF) to diffuse the front-surface n{sup +}-p junction and the back-surface p-p{sup +} junction of single-crystal silicon solar cells in one processing step. They found that all of the HFSF-processed cells have better conversion efficiencies than control cells of identical structures fabricated by conventional furnace diffusion methods. HFSF processing offers several advantages that may contribute to improved solar cell efficiency: (1) it provides a cold-wall process, which reduces contamination; (2) temperature versus time profiles can be precisely controlled; (3) wavelength, intensity, and spatial distribution of the incident solar flux can be controlled and changed rapidly; (4) a number of high-temperature processing steps can be performed simultaneously; and (5) combined quantum and thermal effects may benefit overall cell performance. The HFSF has also been successfully used to texture the surface of silicon wafers and to crystallize a-Si:H thin films on glass.

  14. Impurities in silicon and their impact on solar cell performance

    NARCIS (Netherlands)

    Coletti, Gianluca

    2011-01-01

    Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting sol

  15. Light management in thin-film silicon solar cells

    NARCIS (Netherlands)

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved

  16. Optical absorption enhancement in silicon nanohole arrays for solar photovoltaics.

    Science.gov (United States)

    Han, Sang Eon; Chen, Gang

    2010-03-10

    We investigate silicon nanohole arrays as light absorbing structures for solar photovoltaics via simulation. To obtain the same ultimate efficiency as a standard 300 microm crystalline silicon wafer, we find that nanohole arrays require twelve times less silicon by mass. Moreover, our calculations show that nanohole arrays have an efficiency superior to nanorod arrays for practical thicknesses. With well-established fabrication techniques, nanohole arrays have great potential for efficient solar photovoltaics.

  17. Silicon nanostructures for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Gourbilleau, F. [CIMAP, UMR CNRS/CEA/Ensicaen 6252, 6 Bd Marechal Juin, 14050 Caen Cedex (France)], E-mail: fabrice.gourbilleau@ensicaen.fr; Dufour, C. [CIMAP, UMR CNRS/CEA/Ensicaen 6252, 6 Bd Marechal Juin, 14050 Caen Cedex (France); Rezgui, B.; Bremond, G. [INL, UMR CNRS 5270, Universite de Lyon, INSA-Lyon, Bat. Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex (France)

    2009-03-15

    Among the numerous applications of Si nanostructures in the microelectronic or photonic domains, one which could be promising concerns the use of such structures as the active layer in pin solar cells. By taking advantage of the quantum confinement of the carriers in Si nanograins whose size is lower than 8 nm, it is expected to improve the solar cell efficiency by increasing the absorption range of the solar spectrum. In this work, we report the fabrication, microstructural and optical properties of Si-rich silicon oxide (SRSO) composite layers and SRSO/SiO{sub 2} multilayers fabricated by reactive magnetron sputtering process. This process allows monitoring either the Si nanograins size and/or the Si nanograin density through specific deposition parameters such as the hydrogen rate in the plasma, the substrate temperature, the annealing treatment. Their effects on the photoluminescent properties as well as on the absorption coefficient are discussed. The SRSO/SiO{sub 2} multilayers absorption is higher with respect to the SRSO composite layer. Such behaviour has been attributed to a better control of the Si nanograin size.

  18. Silicon bulk growth for solar cells: Science and technology

    Science.gov (United States)

    Kakimoto, Koichi; Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji

    2017-02-01

    The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both single-crystalline and multicrystalline wafers.

  19. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  20. Solar Grade Silicon from Agricultural By-products

    Energy Technology Data Exchange (ETDEWEB)

    Richard M. Laine

    2012-08-20

    C in an environmentally benign process to adjust SiO2:C ratios to those needed in EAF processing to Sipv. EAF processing with silica depleted rice hull ash (RHASD), with nanometer scale carbon/silica mixing, reacts up to 10x faster than in traditional EAF processing because the physical distances over which the reactions occur are measured in nm vs cm. We have focused on demonstrating the efficiency in existing furnace technologies, meaning our success offers the potential to convert some portion of existing US furnace infrastructure (for Simet) to high purity silicon production. The linkage of our process to the existing infrastructure of the U.S. silicon manufacturing industry, already a world leader, is unique compared to all other initiatives trying to produce Sipv. Purifying the silica/carbon mixture before EAF conversion to Sipv greatly reduces CAPEX and OPEX costs, reducing the final solar energy cost by $0.18-0.24/watt.

  1. Black silicon solar cells with black bus-bar strings

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io

    2016-01-01

    We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by maskless reactive ion etching resulting in total, average reflectance...... below 0.5% across a 156x156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional allblack solar 9-cell panels. The black bus-bars (e.......g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency....

  2. Dendritic web - A viable material for silicon solar cells

    Science.gov (United States)

    Seidensticker, R. G.; Scudder, L.; Brandhorst, H. W., Jr.

    1975-01-01

    The dendritic web process is a technique for growing thin silicon ribbon from liquid silicon. The material is suitable for solar cell fabrication and, in fact, cells fabricated on web material are equivalent in performance to cells fabricated on Czochralski-grown material. A recently concluded study has delineated the thermal requirements for silicon web crucibles, and a detailed conceptual design has been developed for a laboratory growth apparatus.

  3. A silicon sheet casting experiment. [for solar cell water production

    Science.gov (United States)

    Bickler, D. B.; Sanchez, L. E.; Sampson, W. J.

    1980-01-01

    The casting of silicon blanks for solar cells directly without slicing is an exciting concept. An experiment was performed to investigate the feasibility of developing a machine that casts wafers directly. A Czochralski furnace was modified to accept a graphite ingot-simulating fixture. Silicon was melted in the middle of the ingot simulator in a boron nitride mold. Sample castings showed reasonable crystal size. Solar cells were made from the cast blanks. The performance is reported.

  4. Buried contact multijunction thin film silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Green, M. [Univ. of New South Wales, Sydney (Australia)

    1995-08-01

    In early 1994, the Center for Photovoltaic Devices and Systems announced the filing of patent applications on an improved silicon thin film photovoltaic module approach. With material costs estimated to be about 20 times lower than those in present silicon solar cell modules along with other production advantages, this technology appears likely to make low cost, high performance solar modules available for the first time. This paper describes steps involved in making a module and module performance.

  5. Silicon solar cells with low-cost substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kotval, P.S.; Strock, H.B.

    1978-11-07

    Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost, high purity semiconductor grade silicon. The epitaxial type products have an n-on-p-on-p substrate configuration, while the diffusion-type products have pentavalent impurities diffused therein to form a p-n junction in the low cost silicon substrate. One embodiment employs a multigrained refined metallurgical silicon (RMS) prepared by precipitating essentially iron-free silicon platelets from a solution of metallurgical grade silicon in molten aluminum, melting said refined platelets, in contact with a silica slag and pulling silicon boules from a melt of said refined metallurgical silicon (RMS). By directionally solidifying the refined silicon--slag melt, a multigrained, directionally solidified refined metallurgical silicon (DS/RMS) is obtained, with boules being pulled from a melt thereof for use as said low-cost substrate. The DS/RMS may also be re-melted and directionally solidified a second time with the boules being pulled from said twice directionally solidified material being a desirable, low-cost, single crystal material suitable for use as said substrate for planar diode and solar cell applications.

  6. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu; Holman, Zachary C. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States)

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  7. Review. Industrial silicon wafer solar cells. Status and trends

    Energy Technology Data Exchange (ETDEWEB)

    Aberle, Armin G.; Boreland, Matthew B.; Hoex, Bram; Mueller, Thomas [National Univ. of Singapore (Singapore). Solar Energy Research Institute of Singapore (SERIS)

    2012-11-01

    Crystalline silicon solar cells dominate today's global photovoltaic (PV) market. This paper presents the status and trends of the most important industrial silicon wafer solar cells, ranging from standard p-type homojunction cells to heterojunction cells on n-type wafers. Owing to ongoing technological innovations such as improved surface passivation and the use of increasingly thinner wafers, the trend towards higher cell efficiencies and lower dollar/watt costs is expected to continue during the next 10 years, making silicon wafer based PV modules a moving target for any competing PV technology. (orig.)

  8. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced chemic

  9. Microstructure and Mechanical Aspects of Multicrystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Popovich, V.A.

    2013-01-01

    Due to pressure from the photovoltaic industry to decrease the cost of solar cell production, there is a tendency to reduce the thickness of silicon wafers. Unfortunately, wafers contain defects created by the various processing steps involved in solar cell production, which significantly reduce the

  10. Thin foil silicon solar cells with coplanar back contacts

    Science.gov (United States)

    Ho, F.; Iles, P. A.; Baraona, C. R.

    1981-01-01

    To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

  11. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  12. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  13. Solar Grade Silicon from Agricultural By-products

    Energy Technology Data Exchange (ETDEWEB)

    Richard M. Laine

    2012-08-20

    In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it

  14. Studies of silicon p-n junction solar cells

    Science.gov (United States)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  15. Silver nanoparticles-coated glass frits for silicon solar cells

    Science.gov (United States)

    Li, Yingfen; Gan, Weiping; Li, Biyuan

    2016-04-01

    Silver nanoparticles-coated glass frit composite powders for silicon solar cells were prepared by electroless plating. Silver colloids were used as the activating agent of glass frits. The products were characterized by X-ray diffraction, scanning electron microscopy, and differential scanning calorimetry. The characterization results indicated that silver nanoparticles with the melting temperature of 838 °C were uniformly deposited on glass frit surface. The particle size of silver nanoparticles could be controlled by adjusting the [Ag(NH3)2]NO3 concentration. The as-prepared composite powders were applied in the front side metallization of silicon solar cells. Compared with those based on pure glass frits, the solar cells containing the composite powders had the denser silver electrodes and the better silver-silicon ohmic contacts. Furthermore, the photovoltaic performances of solar cells were improved after the electroless plating.

  16. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. High-flux solar furnace processing of crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Menna, P. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[ENEA-Centro Ricerche Fotovoltaiche, Portici 80055 (Italy); Landry, M.D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Gee, J.M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Ciszek, T.F. [National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1{percent}-efficient crystalline-silicon solar cell with an area of 4.6cm{sup 2} was fabricated using the HFSF for simultaneous diffusion of front n{sup +}-p and back p-p{sup +} junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell. {copyright} {ital 1997 American Institute of Physics.}

  18. High-flux solar furnace processing of crystalline silicon solar cells

    Science.gov (United States)

    Tsuo, Y. S.; Pitts, J. R.; Menna, P.; Landry, M. D.; Gee, J. M.; Ciszek, T. F.

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1%-efficient crystalline-silicon solar cell with an area of 4.6 cm2 was fabricated using the HFSF for simultaneous diffusion of front n+-p and back p-p+ junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell.

  19. CARBON REMOVAL FROM METALLIC SILICON BY CARBIDE SETTLING FOR SOLAR GRADE SILICON PRODUCTION

    Directory of Open Access Journals (Sweden)

    Tiago Ramos Ribeiro

    2015-03-01

    Full Text Available The use of solar energy is growing sharply in the past years. The most used material for solar cells is high-purity silicon produced by refining low-purity silicon. With the increasing demand for photovoltaic components, new refining processes have been investigated. Carbon is one of the impurities to be removed and one possible removing technique is based on the settling of silicon carbide particles. Settling tests were carried out at 1,500°C during one and six hours. Results show that differences in settling time do not affect carbon removal significantly and that the carbon contents after settling are still higher than that required by standards for solar grade silicon (43 ppm. Results from this work and from literature show that settling is not a feasible processing step for carbon removal to the level needed for photovoltaic applications.

  20. Silicon space solar cells: progression and radiation-resistance analysis

    Science.gov (United States)

    Rehman, Atteq ur; Lee, Sang Hee; Lee, Soo Hong

    2016-02-01

    In this paper, an overview of the solar cell technology based on silicon for applications in space is presented. First, the space environment and its effects on the basis of satellite orbits, such as geostationary earth orbit (GEO) and low earth orbit (LEO), are described. The space solar cell technology based on silicon-based materials, including thin-film silicon solar cells, for use in space was appraised. The evolution of the design for silicon solar cell for use in space, such as a backsurface field (BSF), selective doping, and both-side passivation, etc., is illustrated. This paper also describes the nature of radiation-induced defects and the models proposed for understanding the output power degradation in silicon space solar cells. The phenomenon of an anomalous increase in the short-circuit current ( I sc) in the fluence irradiation range from 2 × 1016 cm-2 to 5 × 1016 cm-2 is also described explicitly from the view point of the various presented models.

  1. Efficiency improvement of silicon nanostructure-based solar cells.

    Science.gov (United States)

    Huang, Bohr-Ran; Yang, Ying-Kan; Yang, Wen-Luh

    2014-01-24

    Solar cells based on a high-efficiency silicon nanostructure (SNS) were developed using a two-step metal-assisted electroless etching (MAEE) technique, phosphorus silicate glass (PSG) doping and screen printing. This process was used to produce solar cells with a silver nitrate (AgNO3) etching solution in different concentrations. Compared to cells produced using the single MAEE technique, SNS-based solar cells produced with the two-step MAEE technique showed an increase in silicon surface coverage of ~181.1% and a decrease in reflectivity of ~144.3%. The performance of the SNS-based solar cells was found to be optimized (~11.86%) in an SNS with a length of ~300 nm, an aspect ratio of ~5, surface coverage of ~84.9% and a reflectivity of ~6.1%. The ~16.8% increase in power conversion efficiency (PCE) for the SNS-based solar cell indicates good potential for mass production.

  2. Bulk fabrication and properties of solar grade silicon microwires

    Directory of Open Access Journals (Sweden)

    F. A. Martinsen

    2014-11-01

    Full Text Available We demonstrate a substrate-free novel route for fabrication of solar grade silicon microwires for photovoltaic applications. The microwires are fabricated from low purity starting material via a bulk molten-core fibre drawing method. In-situ segregation of impurities during the directional solidification of the fibres yields solar grade silicon cores (microwires where the concentration of electrically detrimental transition metals has been reduced between one and two orders of magnitude. The microwires show bulk minority carrier diffusion lengths measuring ∼40 μm, and mobilities comparable to those of single-crystal silicon. Microwires passivated with amorphous silicon yield diffusion lengths comparable to those in the bulk.

  3. Solar cell fabricated on welded thin flexible silicon

    Directory of Open Access Journals (Sweden)

    Hessmann Maik Thomas

    2015-01-01

    Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

  4. DEVELOPMENT OF A FURNACE TO FABRICATE SILICON SOLAR CELLS

    Directory of Open Access Journals (Sweden)

    Sérgio Boscato Garcia

    2012-06-01

    Full Text Available Solar cell world market had an exponential growth in the last decade and nowadays it continues in expansion. To produce solar cells, dopants need to be introduced into the crystalline silicon wafer in order to form the pn junction. This process is carried out in diffusion furnaces. The aim of this paper is to present the development of a compact diffusion furnace to process up to 156 mm × 156 mm silicon wafers and to operate at temperature up to 1100°C. The furnace is automated and it is constituted by a heating system with three zones and systems to introduce the wafers inside the furnace as well as to control of gas flows. This equipment is the first one developed in Brazil to promote impurity diffusions in order to produce silicon solar cells and it was manufactured jointly with a Brazilian company.

  5. Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

    OpenAIRE

    Tomasi, Andrea; Paviet-Salomon, Bertrand Yves Paul; Lachenal, Damien; Martin de Nicolas Agut, Silvia; Descoeudres, Antoine; Geissbühler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we ...

  6. Black Silicon formation using dry etching for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Murias, D. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Reyes-Betanzo, C., E-mail: creyes@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Moreno, M.; Torres, A.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R.; Soriano, M. [Universidad Autonoma de Ciudad Juarez, Chihuahua (Mexico); Lucas, J. [Instituto Tecnologico de Tehuacan, Puebla (Mexico); Cabarrocas, P. Roca i [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, Palaiseau (France)

    2012-09-20

    A study on the formation of Black Silicon on crystalline silicon surface using SF{sub 6}/O{sub 2} and SF{sub 6}/O{sub 2}/CH{sub 4} based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  7. Interface engineering of Graphene-Silicon heterojunction solar cells

    Science.gov (United States)

    Xu, Dikai; Yu, Xuegong; Yang, Lifei; Yang, Deren

    2016-11-01

    Graphene has attracted great research interests due to its unique mechanical, electrical and optical properties, which opens up a huge number of opportunities for applications. Recently, Graphene-Silicon (Grsbnd Si) solar cell has been recognized as one interesting candidate for the future photovoltaic. Since the first Grsbnd Si solar cell reported in 2010, Grsbnd Si solar cell has been intensively investigated and the power converse efficiency (PCE) of it has been developed to 15.6%. This review presents and discusses current development of Grsbnd Si solar cell. Firstly, the basic concept and mechanism of Grsbnd Si solar cell are introduced. Then, several key technologies are introduced to improve the performance of Grsbnd Si solar cells, such as chemical doping, annealing, Si surface passivation and interlayer insertion. Particular emphasis is placed on strategies for Grsbnd Si interface engineering. Finally, new pathways and opportunities of "MIS-like structure" Grsbnd Si solar cells are described.

  8. DEVELOPMENT OF A FURNACE TO FABRICATE SILICON SOLAR CELLS

    OpenAIRE

    Sérgio Boscato Garcia; Adriano Moehlecke; Izete Zanesco

    2012-01-01

    Solar cell world market had an exponential growth in the last decade and nowadays it continues in expansion. To produce solar cells, dopants need to be introduced into the crystalline silicon wafer in order to form the pn junction. This process is carried out in diffusion furnaces. The aim of this paper is to present the development of a compact diffusion furnace to process up to 156 mm × 156 mm silicon wafers and to operate at temperature up to 1100°C. The furnace is automated an...

  9. Laser annealing of thin film polycrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    Chowdhury A.

    2013-11-01

    Full Text Available Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.

  10. Influence of porous silicon formation on the performance of multi-crystalline silicon solar cells

    Indian Academy of Sciences (India)

    M Saad; M Naddaf

    2015-06-01

    The effect of formation of porous silicon on the performance of multi-crystalline silicon (mc-Si) solar cells is presented. Surface treatment of mc-Si solar cells was performed by electrochemical etching in HF-based solution. The effect of etching is viewed through scanning electron microscope (SEM) photographs that indicated the formation of a porous layer on the surface. Total reflection spectroscopy measurements on solar cells revealed reduced reflection after etching. In order to demonstrate the effect of this porous layer on the solar cell performance, illumination-dependent – characteristics and spectral response measurements were performed and analysed before and after etching. At all illumination intensities, short-circuit current density and open-circuit voltage values for the etched solar cell were higher than those before etching, whereas fill factor values were lower for the etched cell at high illumination intensities. An interpretation of these findings is presented.

  11. Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

    Science.gov (United States)

    Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

    1981-01-01

    The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

  12. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film sili

  13. Crystalline silicon solar cells with high resistivity emitter

    Science.gov (United States)

    Panek, P.; Drabczyk, K.; Zięba, P.

    2009-06-01

    The paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

  14. Inexpensive transparent nanoelectrode for crystalline silicon solar cells

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-06-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost.

  15. Silicon Germanium Quantum Well Solar Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  16. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiCx(p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiCx(p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm(-2) on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a Voc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p(+)/p-wafer full-side-passivated rear-side scheme shown here.

  17. Pin solar cells made of amorphous silicon

    Science.gov (United States)

    Plaettner, R. D.; Kruehler, W. W.

    Investigations leading to solar cells with a structure SnO2-pin and an efficiency up to 9.8% are reviewed. The production of large-surface metal/pin/transparent conductive oxide (TCO)-solar cells is discussed. A two-chamber reactor, grid structure and tinning of cells, and an a-Si-module are described. The production of glass/TCO/pin/metal-solar cells and a-SiGe:H-compounds is outlined. Measurements on solar cells and diodes including the efficiency of a-Si:H-solar cells, spectral sensitivity, diffusion lengths, field effect measurements, and modifications of solar cells (space-charge limited currents, reduction of solar cells aging) are treated.

  18. Low cost thin film poly-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

  19. Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

    Science.gov (United States)

    Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

    1977-01-01

    The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

  20. Velocity and abundance of silicon ions in the solar wind

    Energy Technology Data Exchange (ETDEWEB)

    Bochsler, P.

    1989-03-01

    Using data from the ISEE-3 ion composition instrument (ICI), velocities and abundances of silicon ions in the solar wind have been determined. The period of investigation covers the maximum of solar cycle 21, beginning with launch of ISEE-3 in August 1978 and ending at the removal of the spacecraft from the Lagrangian Point L1 in June 1982. The results generally confirm previous ICI observations of iron, the other heavy element with a low first ionization potential measured with the ICI. Silicon ions (and other ions in the same M/Q range) tend to stream at the bulk velocity of /sup 4/He/sup + +/ in low-speed solar wind. At high-speed solar wind. Si lags by up to or about 20 km/s after /sup 4/He/sup + +/. By means of a minimum variance estimation technique, fluxes (and densities) of silicon in the solar wind have been obtained free of bias. An average Si/O flux ratio of 0.19 +- 0.04 is derived. This value is larger by a factor of 3 or 4 than the Si/O abundance ratio at the solar surface. copyright American Geophysical Union 1989

  1. Silicon solar cell monitors high temperature furnace operation

    Science.gov (United States)

    Zellner, G. J.

    1968-01-01

    Silicon solar cell, attached to each viewpoint, monitors that incandescent emission from the hot interior of a furnace without interfering with the test assembly or optical pyrometry during the test. This technique can provide continuous indication of hot spots or provide warning of excessive temperatures in cooler regions.

  2. Plasmonic silicon solar cells: impact of material quality and geometry

    NARCIS (Netherlands)

    Pahud, C.; Isabella, O.; Naqavi, A.; Haug, F.J.; Zeman, M.; Herzig, H.P.; Ballif, C.

    2013-01-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We

  3. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of nanocry

  4. Light-induced performance increase of silicon heterojunction solar cells

    KAUST Repository

    Kobayashi, Eiji

    2016-10-11

    Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

  5. Radiation tolerance of boron doped dendritic web silicon solar cells

    Science.gov (United States)

    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  6. Stable passivations for high-efficiency silicon solar cells

    Science.gov (United States)

    Gruenbaum, P. E.; Gan, J. Y.; King, R. R.; Swanson, R. M.

    Initial designs of single-crystal silicon point-contact solar cells have shown a degradation in their efficiency after being exposed to concentrated sunlight. The main mechanism appears to be an increase in recombination centers at the Si/SiO2 interface due to ultraviolet light photoinjecting electrons from the silicon conduction band into the silicon dioxide that passivates the cell's front surface. Trichloroethane, texturization, and aluminum during the forming gas anneal all contribute to the instability of the interface. A reasonably good resistance to UV light can be obtained by putting a phosphorus diffusion at the surface and can be improved further by stripping off the deposited oxide after the diffusion and regrowing a dry thermal oxide. A second technique, which utilizes ultrathin oxides and thin polysilicon films and can yield stable point-contact solar cells that are more efficient at higher concentrations, is also described.

  7. Gettering improvements of minority-carrier lifetimesin solar grade silicon

    DEFF Research Database (Denmark)

    Osinniy, Viktor; Nylandsted Larsen, Arne; Dahl, Espen;

    2012-01-01

    processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each......The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature...

  8. Hydrogen passivation of multi-crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    胡志华; 廖显伯; 刘祖明; 夏朝凤; 陈庭金

    2003-01-01

    The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this paper.Hydrogen plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

  9. Investigation of Backside Textures for Genesis Solar Wind Silicon Collectors

    Science.gov (United States)

    Gonzalez, C. P.; Burkett, P. J.; Rodriguez, M. C.; Allton, J. H.

    2014-01-01

    Genesis solar wind collectors were comprised of a suite of 15 types of ultrapure materials. The single crystal, pure silicon collectors were fabricated by two methods: float zone (FZ) and Czochralski (CZ). Because of slight differences in bulk purity and surface cleanliness among the fabrication processes and the specific vendor, it is desirable to know which variety of silicon and identity of vendor, so that appropriate reference materials can be used. The Czochralski method results in a bulk composition with slightly higher oxygen, for example. The CZ silicon array wafers that were Genesis-flown were purchased from MEMC Electronics. Most of the Genesis-flown FZ silicon was purchased from Unisil and cleaned by MEMC, although a few FZ wafers were acquired from International Wafer Service (IWS).

  10. Transparent Conductive Oxides for Thin-Film Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.

    2005-04-25

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150C and 350C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the

  11. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  12. Increasing the efficiency of polymer solar cells by silicon nanowires.

    Science.gov (United States)

    Eisenhawer, B; Sensfuss, S; Sivakov, V; Pietsch, M; Andrä, G; Falk, F

    2011-08-05

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  13. Role of majority and minority carrier barriers silicon/organic hybrid heterojunction solar cells.

    Science.gov (United States)

    Avasthi, Sushobhan; Lee, Stephanie; Loo, Yueh-Lin; Sturm, James C

    2011-12-22

    A hybrid approach to solar cells is demonstrated in which a silicon p-n junction, used in conventional silicon-based photovoltaics, is replaced by a room-temperature fabricated silicon/organic heterojunction. The unique advantage of silicon/organic heterojunction is that it exploits the cost advantage of organic semiconductors and the performance advantages of silicon to enable potentially low-cost, efficient solar cells.

  14. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Colder, H. [SIFCOM, CNRS-UMR 6176, ENSICAEN, 6 boulevard Mal Juin, 14050 Caen (France)], E-mail: heloise.taupin@ensicaen.fr; Marie, P.; Gourbilleau, F. [SIFCOM, CNRS-UMR 6176, ENSICAEN, 6 boulevard Mal Juin, 14050 Caen (France)

    2008-08-30

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t{sub SRSO}, are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t{sub SRSO} from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells.

  15. Doped nanocrystalline silicon oxide for use as (intermediate) reflecting layers in thin-film silicon solar cells

    NARCIS (Netherlands)

    Babal, P.

    2014-01-01

    In summary, this thesis shows the development and nanostructure analysis of doped silicon oxide layers. These layers are applied in thin-film silicon single and double junction solar cells. Concepts of intermediate reflectors (IR), consisting of silicon and/or zinc oxide, are applied in tandem cells

  16. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    N.J. Mohr; A. Meijer; M.A.J. Huijbregts; L. Reijnders

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  17. Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Evaluation of Shunt Losses in Industrial Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    P. Somasundaran

    2016-01-01

    Full Text Available Shunting is one of the key issues in industrial silicon solar cells which degrade cell performance. This paper presents an approach for investigation of the performance degradation caused by the presence of ohmic extended shunts at various locations in industrial silicon solar cells. Location, nature, and area of the shunts existing in solar cells have been examined by lock-in infrared thermography (LIT. Based on LIT images and experimental dark I-V curves of solar cell, shunted cell has been modeled, from which loss in fill factor and efficiency due to the specific shunt has been obtained. Distributed diode modeling approach of solar cell has been exploited for obtaining simulation results which were supported by experimental measurements. The presented approach is useful to estimate performance reduction due to specific shunts and to quantify losses, which can help in improving the efficiency of solar cell during production by tackling the shunt related problems based on the level of severity and tolerance.

  19. Degradation of bulk diffusion length in CZ silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reiss, J.H.; King, R.R.; Mitchell, K.W. [Siemens Solar Industries, Camarillo, CA (United States)

    1995-08-01

    Commercially-produced, unencapsulated, CZ silicon solar cells can lose 3 to 4% of their initial efficiency after exposure to light. After this initial, rapid ( < 30 min.) decrease, the cell power output remains stable. The cell performance recovers in a matter of hours in the dark at room temperature, and degrades again under light exposure. The different conditions under which CZ silicon cells degrade, and the reverse process, annealing, are characterized with the methods of spectral response and current-voltage (I-V) measurements. Iron impurities are a possible cause of this effect.

  20. Key Success Factors and Future Perspective of Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    S. Binetti

    2013-01-01

    Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

  1. Solar power conversion efficiency in modulated silicon nanowire photonic crystals

    Science.gov (United States)

    Deinega, Alexei; John, Sajeev

    2012-10-01

    It is suggested that using only 1 μm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power conversion efficiency in the range of 15%-20% can be achieved. Choosing a specific modulation profile provides antireflection, light trapping, and back-reflection over broad angles in targeted spectral regions for high efficiency power conversion without solar tracking. Solving both Maxwell's equations in the 3D photonic crystal and the semiconductor drift-diffusion equations in each nanowire, we identify optimal junction and contact geometries and study the influence of the nanowire surface curvature on solar cell efficiency. We demonstrate that suitably modulated nanowires enable 20% efficiency improvement over their straight counterparts made of an equivalent amount of silicon. We also discuss the efficiency of a tandem amorphous and crystalline silicon nanowire photonic crystal solar cell. Opportunities for "hot carrier" collection and up-conversion of infrared light, enhanced by photonic crystal geometry, facilitate further improvements in power efficiency.

  2. Resource recovery of scrap silicon solar battery cell.

    Science.gov (United States)

    Lee, Ching-Hwa; Hung, Chi-En; Tsai, Shang-Lin; Popuri, Srinivasa R; Liao, Ching-Hua

    2013-05-01

    In order to minimize pollution problems and to conserve limited natural resources, a hydrometallurgical procedure was developed in this study to recover the valuable resources of silicon (Si), silver (Ag) and aluminum (Al) from scrap silicon solar battery cells. In this study, several methods of leaching, crystallization, precipitation, electrolysis and replacement were employed to investigate the recovery efficiency of Ag and Al from defective monocrystalline silicon solar battery cells. The defective solar battery cells were ground into powder followed by composition analysis with inductively coupled plasma-atomic emission spectrometry. The target metals Ag and Al weight percentage were found to be 1.67 and 7.68 respectively. A leaching process was adopted with nitric acid (HNO3), hydrochloric acid, sulfuric acid (H2SO4) and sodium hydroxide as leaching reagent to recover Ag and Al from a ground solar battery cell. Aluminum was leached 100% with 18N H2SO4 at 70°C and Ag was leached 100% with 6N HNO3. Pure Si of 100% was achieved from the leaching solution after the recovery of Ag and Al, and was analyzed by scanning electron microscope-energy dispersive spectroscopy. Aluminum was recovered by crystallization process and silver was recovered by precipitation, electrolysis and replacement processes. These processes were applied successfully in the recovery of valuable metal Ag of 98-100%.

  3. Coaxial silicon nanowires as solar cells and nanoelectronic power sources.

    Science.gov (United States)

    Tian, Bozhi; Zheng, Xiaolin; Kempa, Thomas J; Fang, Ying; Yu, Nanfang; Yu, Guihua; Huang, Jinlin; Lieber, Charles M

    2007-10-18

    Solar cells are attractive candidates for clean and renewable power; with miniaturization, they might also serve as integrated power sources for nanoelectronic systems. The use of nanostructures or nanostructured materials represents a general approach to reduce both cost and size and to improve efficiency in photovoltaics. Nanoparticles, nanorods and nanowires have been used to improve charge collection efficiency in polymer-blend and dye-sensitized solar cells, to demonstrate carrier multiplication, and to enable low-temperature processing of photovoltaic devices. Moreover, recent theoretical studies have indicated that coaxial nanowire structures could improve carrier collection and overall efficiency with respect to single-crystal bulk semiconductors of the same materials. However, solar cells based on hybrid nanoarchitectures suffer from relatively low efficiencies and poor stabilities. In addition, previous studies have not yet addressed their use as photovoltaic power elements in nanoelectronics. Here we report the realization of p-type/intrinsic/n-type (p-i-n) coaxial silicon nanowire solar cells. Under one solar equivalent (1-sun) illumination, the p-i-n silicon nanowire elements yield a maximum power output of up to 200 pW per nanowire device and an apparent energy conversion efficiency of up to 3.4 per cent, with stable and improved efficiencies achievable at high-flux illuminations. Furthermore, we show that individual and interconnected silicon nanowire photovoltaic elements can serve as robust power sources to drive functional nanoelectronic sensors and logic gates. These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.

  4. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  5. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  6. Field effect passivation of high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aberle, A.G. (Fraunhofer-Inst. fuer Solare Energiesysteme (ISE), Freiburg (Germany)); Glunz, S. (Fraunhofer-Inst. fuer Solare Energiesysteme (ISE), Freiburg (Germany)); Warta, W. (Fraunhofer-Inst. fuer Solare Energiesysteme (ISE), Freiburg (Germany))

    1993-03-01

    In this paper effective surface recombination velocities S[sub eff] at the rear Si-SiO[sub 2] interface of the presently best one-sun silicon solar cell structure are calculated on the basis of measured oxide parameters. A new cell design is proposed allowing for a control of the surface space charge region by a gate voltage. It is shown that the electric field introduced by the positive fixed oxide charge density typically found at thermally oxidized silicon surfaces and the favorable work function difference between the gate metal aluminum and silicon leads to a reduction of S[sub eff] to values well below 1 cm/s at AM1.5 illumination for n-type as well as p-type silicon. At low illumination levels, however, oxidized n-type silicon has much better surface passivation properties than p-type silicon due to the small hole capture cross section ([sigma][sub n]/[sigma][sub p][approx]1000 at midgap). Only at small illumination intensities for p-type substrates or in the case of poor Si-SiO[sub 2] interface quality the incorporation of a gate electrode on the rear surface is a promising tool for further reducing surface recombination losses. (orig.)

  7. Acceptable contamination levels in solar grade silicon: From feedstock to solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, J. [Instituto de Energia Solar, Avd. Complutense s/n, 28040 Madrid (Spain)], E-mail: jasmin.hofstetter@ies-def.upm.es; Lelievre, J.F.; Canizo, C.; Luque, A. del [Instituto de Energia Solar, Avd. Complutense s/n, 28040 Madrid (Spain)

    2009-03-15

    Ultimately, alternative ways of silicon purification for photovoltaic applications are developed and applied. There is an ongoing debate about what are the acceptable contamination levels within the purified silicon feedstock to specify the material as solar grade silicon. Applying a simple model and making some additional assumptions, we calculate the acceptable contamination levels of different characteristic impurities for each fabrication step of a typical industrial mc-Si solar cell. The acceptable impurity concentrations within the finished solar cell are calculated for SRH recombination exclusively and under low injection conditions. It is assumed that during solar cell fabrication impurity concentrations are only altered by a gettering step. During the crystallization process, impurity segregation at the solid-liquid interface and at extended defects are taken into account. Finally, the initial contamination levels allowed within the feedstock are deduced. The acceptable concentration of iron in the finished solar cell is determined to be 9.7x10{sup -3} ppma whereas the concentration in the silicon feedstock can be as high as 12.5 ppma. In comparison, the titanium concentration admitted in the solar cell is calculated to be 2.7x10{sup -4} ppma and the allowed concentration of 2.2x10{sup -2} ppma in the feedstock is only two orders of magnitude higher. Finally, it is shown theoretically and experimentally that slow cooling rates can lead to a decrease of the interstitial Fe concentration and thus relax the purity requirements in the feedstock.

  8. Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-03-15

    One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo

    2012-06-13

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  10. Comparison of electrical characteristics of silicon solar cells

    Directory of Open Access Journals (Sweden)

    L.A. Dobrzański

    2006-08-01

    Full Text Available Purpose: The aim of this work is comparison of the operational characteristics of photovoltaic silicon cells:monocrystalline silicon, polycrystalline silicon and amorphous silicon.Design/methodology/approach: The notion of fill factor (FF, which is characteristic for Photovoltaic quality,has been introduced to compare properties of different silicon solar cells. Basing on the indicated characteristicthe analysis of cell power efficiency has been carried out and the maximum power points PMM have beendetermined.Findings: It has been pointed out that crystal structure and surface texture affect utility properties of theinvestigated Photovoltaic Silicon Cells. Moreover, it has been stated that along with the radiation intensity growththe maximum cell power increases accompanied by its efficiency deterioration and simultaneous change of themaximum power point position, what causes and short-circuit current increase.Research limitations/implications: It has been found that the cell surface texture has an important influenceon utility properties of the photovoltaic cells, which is connected with the high refractivity of silicon. Therefore,development of the cell surface forming methods is of a significant influence on improvement of the photovoltaiccells properties.Practical implications: Currently the photovoltaic industry is based mostly on the crystalline and polycrystallinesilicon. Limitations of the utility properties resulting from the relationships presented in this paper accompanythe advantages of cells fabricated from the amorphous and polycrystalline silicon, like the low manufacturingcosts and no geometrical limitations. Analysis of the discussed relationships makes optimization of the cellparameters possible, depending on the service requirements.Originality/value: Known cells were compared as regards their conversion efficiency in various lightingconditions, depending on their design and material properties.

  11. Full process for integrating silicon nanowire arrays into solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Perraud, Simon; Poncet, Severine; Noel, Sebastien; Levis, Michel; Faucherand, Pascal; Rouviere, Emmanuelle [CEA, LITEN, Laboratoire des Composants pour la Recuperation d' Energie, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Thony, Philippe; Jaussaud, Claude; Delsol, Regis [CEA, LITEN, Laboratoire des Composants Solaires, INES-RDI, Savoie Technolac, 50 avenue du Lac Leman, 73377 Le-Bourget-du-Lac (France)

    2009-09-15

    A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour-liquid-solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical-mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100 mW/cm{sup 2}, our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects. (author)

  12. Optical stability of silicon nitride MIS inversion layer solar cells

    Science.gov (United States)

    Jaeger, K.; Hezel, R.

    1985-09-01

    For MIS inversion layer solar cells with silicon nitride as an AR coating, accelerated optical stress tests were performed. Degradation of the cell characteristics occurred which was found to be caused by photons with energies equal to or greater than 3.7 eV (wavelength of 335 nm or less). Generation of interface states at the silicon-insulator interface by UV light is shown to be the mechanism responsible. The original cell data could be completely restored by heat treatment (activation energy 0.5 eV) and partially by illumination with short-wavelength light. As the most striking result, however, it is demonstrated that the UV light-induced instability can be drastically improved by incorporation of cesium ions into the silicon nitride layer. An interpretation is given for this effect.

  13. Photoluminescence in large fluence radiation irradiated space silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hisamatsu, Tadashi; Kawasaki, Osamu; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Tsukamoto, Kazuyoshi

    1997-03-01

    Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

  14. The abundance of silicon in the solar atmosphere

    Science.gov (United States)

    Shaltout, A. M. K.; Beheary, M. M.; Bakry, A.; Ichimoto, K.

    2013-04-01

    High-resolution solar spectra were used to determine the silicon abundance (εSi) content by comparison with Si line synthesis relying on realistic hydrodynamical simulations of the solar surface convection, as 3D inhomogeneous model of the solar photosphere. Based on a set of 19 Si I and 2 Si II lines, with accurate transition probabilities as well as accurate observational data available, the solar photospheric Si abundance has been determined to be log εSi(3D) = 7.53 ± 0.07. Here we derive the photospheric silicon abundance taking into account non-LTE effects based on 1D solar model, the non-LTE abundance value we find is log εSi (1D) = 7.52 ± 0.08. The photospheric Si abundance agrees well with the results of Asplund and more recently published by Asplund et al. relative to previous 3D-based abundances, the consistency given that the quoted errors here are (±0.07 dex).

  15. Efficiency Enhancement of Nanoporous Silicon/Polycrystalline-Silicon Solar Cells by Application of Trenched Electrodes

    OpenAIRE

    Kuen-Hsien Wu; Chia-Chun Tang

    2014-01-01

    Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si) solar cells with nanoporous silicon (NPS) surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100) poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE) process and Cr/Al double-layered metal was then deposited to fill the trenches...

  16. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  17. Studies of silicon pn junction solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1977-01-01

    Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

  18. Efficient interdigitated back-contacted silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mingirulli, Nicola; Haschke, Jan; Schulze, Tim F.; Duesterhoeft, J.; Korte, Lars; Rech, Bernd [Helmholtz-Zentrum Berlin (HZB), Institute of Silicon Photovoltaics, Kekulestrasse 5, 12489 Berlin (Germany); Gogolin, Ralf; Ferre, Rafel; Harder, Nils-Peter; Brendel, Rolf [Institute for Solar Energy Research Hameln (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany)

    2011-04-15

    We present back-contacted amorphous/crystalline silicon heterojunction solar cells (IBC-SHJ) on n-type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiN{sub x} /SiO{sub 2} passivated phosphorus-diffused front surface field. V{sub oc} calculations based on carrier lifetime data of reference samples indicate that for the IBC architecture and the given amorphous silicon layer qualities an emitter buffer layer is crucial to reach a high V{sub oc}, as known for both-side contacted silicon heterojunction solar cells. A back surface field buffer layer has a minor influence. We observe a boost in solar cell V{sub oc} of 40 mV and a simultaneous fill factor reduction introducing the buffer layer. The aperture-area efficiency increases from 19.8 {+-} 0.4% to 20.2 {+-} 0.4%. Both, efficiencies and fill factors constitute a significant improvement over previously reported values. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  20. Novel Scheme of Amorphous/Crystalline Silicon Heterojunction Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    De Iuliis, S.; Geerligs, L.J. [ECN Solar Energy, Petten (Netherlands); Tucci, M.; Serenelli, L.; Salza, E. [ENEA Research Center Casaccia, Roma (Italy); De Cesare, G.; Caputo, D.; Ceccarelli, M. [University ' Sapienza' , Department of Electronic Engineering, Roma (Italy)

    2007-01-15

    In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300C, is photolithography-free, using a metallic self-aligned mask to create the interdigitated pattern, and we show that the alignment is feasible. An open-circuit voltage of 687 mV has been measured on a p-type monocrystalline silicon wafer. The mask-assisted deposition process does not influence the uniformity of the deposited amorphous silicon layers. Photocurrent limits factor has been investigated with the aid of one-dimensional modeling and quantum efficiency measurements. On the other hand several technological aspects that limit the fill factor and the short circuit current density still need improvements.

  1. Silicon based solar cells using a multilayer oxide as emitter

    Science.gov (United States)

    Bao, Jie; Wu, Weiliang; Liu, Zongtao; Shen, Hui

    2016-08-01

    In this work, n-type silicon based solar cells with WO3/Ag/WO3 multilayer films as emitter (WAW/n-Si solar cells) were presented via simple physical vapor deposition (PVD). Microstructure and composition of WAW/n-Si solar cells were studied by TEM and XPS, respectively. Furthermore, the dependence of the solar cells performances on each WO3 layer thickness was investigated. The results indicated that the bottom WO3 layer mainly induced band bending and facilitated charge-carriers separation, while the top WO3 layer degraded open-circuit voltage but actually improved optical absorption of the solar cells. The WAW/n-Si solar cells, with optimized bottom and top WO3 layer thicknesses, exhibited 5.21% efficiency on polished wafer with area of 4 cm2 under AM 1.5 condition (25 °C and 100 mW/cm2). Compared with WO3 single-layer film, WAW multilayer films demonstrated better surface passivation quality but more optical loss, while the optical loss could be effectively reduced by implementing light-trapping structures. These results pave a new way for dopant-free solar cells in terms of low-cost and facile process flow.

  2. Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell

    Science.gov (United States)

    De Vecchi, S.; Desrues, T.; Souche, F.; Muñoz, D.; Lemiti, M.

    2012-10-01

    This work reports on the elaboration of a new industrial process based on laser selective ablation of dielectric layers for Interdigitated Back Contact Silicon Heterojunction (IBC Si-HJ) solar cells fabrication. Choice of the process is discussed and cells are processed to validate its performance. A pulsed green laser (515nm) with 10-20ns pulse duration is used for hydrogenated amorphous silicon (a-Si:H) layers patterning steps, whereas metallization is made by screen printed. High Open-Circuit Voltage (Voc=699mV) and Fill Factor (FF=78.5%) values are obtained simultaneously on IBC Si-HJ cells, indicating a high surface passivation level and reduced resistive losses. An efficiency of 19% on non textured 26 cm² solar cells has been reached with this new industrial process.

  3. A virtual crystallization furnace for solar silicon

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, I.; Franke, D. [ACCESS e.V., Aachen (Germany); Krumbe, W.; Liebermann, J. [Bayer AG, Krefeld-Uerdingen (Germany)

    1994-12-31

    Blocks of silicon for photovoltaic applications are economically crystallized in large casting furnaces. The quality of the material is determined by the velocity of the crystallization front, the flatness of the liquid-solid interface and the thermal gradients in the solid during cooling. The process cycle time, which is determined by the rate of crystallization and cooling, has a large effect on the process economic viability. Traditionally trial and error was used to determine the process control parameters, the success of which depended on the operator`s experience and intuition. This paper presents a numerical model, which when completed by a fitted data set, constitutes a virtual model of a real crystallization furnace, the Virtual Crystallization Furnace (VCF). The time-temperature distribution during the process cycle is the main output, which includes a display of actual liquid-solid front position. Moreover, solidification velocity, temperature gradients and thermal stresses can be deduced from this output. The time needed to run a simulation on a modern work-station is approximately 1/6 of real process time, thereby allowing the user to make many process variations at very reasonable costs. Therefore the VCF is a powerful tool for optimizing the process in order to reduce cycle time and to increase product quality.

  4. Detailed balance limit efficiency of silicon intermediate band solar cells

    Institute of Scientific and Technical Information of China (English)

    Cao Quan; Ma Zhi-Hua; Xue Chun-Lai; Zuo Yu-Hua; Wang Qi-Ming

    2011-01-01

    The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC),which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration,improving greatly than 40.7% of the Shockley-Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the siliconbased solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV,and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%,having a better potential.

  5. Silicon halide-alkali metal flames as a source of solar grade silicon

    Science.gov (United States)

    Olson, D. B.; Miller, W. J.; Gould, R. K.

    1980-01-01

    The feasibility of using continuous high-temperature reactions of alkali metals and silicon halides to produce silicon in large quantities and of suitable purity for use in the production of photovoltaic solar cells was demonstrated. Low pressure experiments were performed demonstrating the production of free silicon and providing experience with the construction of reactant vapor generators. Further experiments at higher reagent flow rates were performed in a low temperature flow tube configuration with co-axial injection of reagents and relatively pure silicon was produced. A high temperature graphite flow tube was built and continuous separation of Si from NaCl was demonstrated. A larger scaled well stirred reactor was built. Experiments were performed to investigate the compatability of graphite based reactor materials of construction with sodium. At 1100 to 1200 K none of these materials were found to be suitable. At 1700 K the graphites performed well with little damage except to coatings of pyrolytic graphite and silicon carbide which were damaged.

  6. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Maruska, P [Spire Corp., Bedford, MA (United States)

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  7. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  8. IR characterization of hydrogen in crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stavola, M., E-mail: michael.stavola@Lehigh.ed [Department of Physics, Lehigh University, Bethlehem, PA 18015 (United States); Kleekajai, S.; Wen, L.; Peng, C. [Department of Physics, Lehigh University, Bethlehem, PA 18015 (United States); Yelundur, V.; Rohatgi, A. [School of Electrical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Carnel, L. [REC Wafer AS, NO-3908 Porsgrunn (Norway); Kalejs, J. [American Capital Energy, N. Chelmsford, MA 01863 (United States)

    2009-12-15

    Hydrogen is commonly introduced into silicon solar cells to reduce the deleterious effects of defects and to increase cell efficiency. A process that is widely used by industry to introduce hydrogen is by the post-deposition annealing of a hydrogen-rich SiN{sub x} layer that is used as an anti-reflection coating. A number of questions about this hydrogen introduction process and hydrogen's subsequent interactions with defects have proved difficult to address because of the low concentration of hydrogen that is introduced into the Si bulk. We have used the fundamental knowledge of hydrogenated defects that has been revealed by recent investigations of impurity-H complexes to develop strategies by which hydrogen in silicon can be detected by IR spectroscopy with high sensitivity. The introduction of hydrogen into Si by the post-deposition annealing of a SiN{sub x} coating has been investigated.

  9. Infrared electroabsorption spectra in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lyou, J.H.; Schiff, E.A.; Hegedus, S.S.; Guha, S.; Yang, J.

    1999-07-01

    The authors report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. They find a band with a peak energy of 0.8 eV. The existence of this band has not, to their knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon. The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

  10. Using amorphous silicon solar cells to boost the viability of luminescent solar concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, Daniel J. [Physics Department, Imperial College London, South Kensington campus, SW7 2AZ, London (United Kingdom); Sark, Wilfried G.J.H.M. van [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Velthuijsen, Steven T.; Schropp, Ruud E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2010-04-15

    We have, for the first time, designed and fabricated hydrogenated amorphous silicon solar cells to be used in conjunction with Luminescent Solar Concentrators (LSCs). LSCs are planar plastic sheets doped with organic dyes that absorb solar illumination and down shift the energy to narrowband luminescence which is collected by solar cells attached to the sheet edge. We fabricated an LSC module with two bonded solar cells and performed characterisation with the cells connected in series and parallel configurations. We find that the LSC module has an optical collection efficiency of 9.5% and an optimum power conversion efficiency of approaching 1% when the cells are in a parallel connection. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

    Energy Technology Data Exchange (ETDEWEB)

    Nouri, H.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Bouaicha, M. [Laboratoire de Photovoltaique, des Semi-conducteurs et des Nanostructures, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2009-10-15

    In this work we analyse the effect of porous silicon on the performances of multicrystalline silicon (mc-Si) solar cells during the porous silicon-based gettering procedure. This procedure consists of forming PS layers on both front and back sides of the mc-Si wafers followed by an annealing in an infrared furnace under a controlled atmosphere at different temperatures. Three sets of samples (A, B and C) have been prepared; for samples A and B, the PS films were removed before and after annealing, respectively. In order to optimize the annealing temperature, we measure the defect density at a selected grain boundary (GB) using the dark current-voltage (I-V) characteristics across the GB itself. The annealing temperature was optimized to 1000 C. The effect of these treatments on the performances of mc-Si solar cells was studied by means of the current-voltage characteristic (at AM 1.5) and the internal quantum efficiency (IQE). The results obtained for cell A and cell B were compared to those obtained on a reference cell (C). (author)

  12. Electroplated contacts and porous silicon for silicon based solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

    2015-04-15

    Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

  13. Novel silicon phases and nanostructures for solar energy conversion

    Science.gov (United States)

    Wippermann, Stefan; He, Yuping; Vörös, Márton; Galli, Giulia

    2016-12-01

    Silicon exhibits a large variety of different bulk phases, allotropes, and composite structures, such as, e.g., clathrates or nanostructures, at both higher and lower densities compared with diamond-like Si-I. New Si structures continue to be discovered. These novel forms of Si offer exciting prospects to create Si based materials, which are non-toxic and earth-abundant, with properties tailored precisely towards specific applications. We illustrate how such novel Si based materials either in the bulk or as nanostructures may be used to significantly improve the efficiency of solar energy conversion devices.

  14. High efficiency interdigitated back contact silicon solar cells

    Science.gov (United States)

    Verlinden, P.; van de Wiele, F.; Stehelin, G.; Floret, F.; David, J. P.

    Interdigitated back contact (IBC) silicon solar cells with 25.6 percent efficiency at 10 W/sq cm and 24.4 percent at 30 W/ sq cm were fabricated. The authors report on the technological process, which produces a high effective carrier lifetime in the bulk (780 microsec), and on the characterization of the cells. The front side of these cells is textured and has an efficient polka-dot floating tandem junction. IBC and point-contact (PC) cells are fabricated on the same substrate and their efficiencies are compared. The possiblity of reaching 29 percent efficiency at 300X is shown.

  15. Silicon (BSFR) solar cell AC parameters at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, R Anil; Suresh, M.S. [ISRO Satellite Center, Bangalore- 560 017 (India); Nagaraju, J. [Solar Energy and Thermodynamic Laboratory, Department of Instrumentation, Indian Institute of Science, Bangalore- 560 012 (India)

    2005-01-31

    The AC parameters of back surface field reflected (BSFR) silicon solar cell are measured at different cell temperatures (198-348K) both in forward and reverse bias under dark condition using impedance spectroscopy technique. It is found that cell capacitance increases with temperature whereas cell resistance decreases, in forward bias voltage. Beyond maximum power point voltage, the cell inductance (0.28{mu}H) is measured, as the inductive reactance is comparable with cell series resistance. The measured cell parameters (cell capacitance, dynamic resistance, etc) are used to calculate the mean carrier lifetime and diode factor at different cell temperatures.

  16. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    NARCIS (Netherlands)

    de Jong, M.M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic subst

  17. A stamped PEDOT:PSS-silicon nanowire hybrid solar cell.

    Science.gov (United States)

    Moiz, Syed Abdul; Nahhas, Ahmed Muhammad; Um, Han-Don; Jee, Sang-Won; Cho, Hyung Koun; Kim, Sang-Woo; Lee, Jung-Ho

    2012-04-13

    A novel stamped hybrid solar cell was proposed using the stamping transfer technique by stamping an active PEDOT:PSS thin layer onto the top of silicon nanowires (SiNWs). Compared to a bulk-type counterpart that fully embeds SiNWs inside PEDOT:PSS, an increase in the photovoltaic efficiency was observed by a factor of ∼4.6, along with improvements in both electrical and optical responses for the stamped hybrid cell. Such improvements for hybrid cells was due to the formation of well-connected and linearly aligned active PEDOT:PSS channels at the top ends of the nanowires after the stamping process. These stamped channels facilitated not only to improve the charge transport, light absorption, but also to decrease the free carriers as well as exciton recombination losses for stamped hybrid solar cells.

  18. Laser Process for Selective Emitter Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    G. Poulain

    2012-01-01

    Full Text Available Selective emitter solar cells can provide a significant increase in conversion efficiency. However current approaches need many technological steps and alignment procedures. This paper reports on a preliminary attempt to reduce the number of processing steps and therefore the cost of selective emitter cells. In the developed procedure, a phosphorous glass covered with silicon nitride acts as the doping source. A laser is used to open locally the antireflection coating and at the same time achieve local phosphorus diffusion. In this process the standard chemical etching of the phosphorous glass is avoided. Sheet resistance variation from 100 Ω/sq to 40 Ω/sq is demonstrated with a nanosecond UV laser. Numerical simulation of the laser-matter interaction is discussed to understand the dopant diffusion efficiency. Preliminary solar cells results show a 0.5% improvement compared with a homogeneous emitter structure.

  19. Short circuit current in indium tin oxide/silicon solar cells

    Science.gov (United States)

    Singh, R.

    1980-09-01

    The short-circuit current density of indium tin oxide/single and polycrystalline silicon solar cells reported by Schunck and Coche (1979) is much higher than other silicon solar cells. It is shown that the short-circuit current density reported in the above reference does not represent the true value of these devices.

  20. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  1. Process development for single-crystal silicon solar cells

    Science.gov (United States)

    Bohra, Mihir H.

    Solar energy is a viable, rapidly growing and an important renewable alternative to other sources of energy generation because of its abundant supply and low manufacturing cost. Silicon still remains the major contributor for manufacturing solar cells accounting for 80% of the market share. Of this, single-crystal solar cells account for half of the share. Laboratory cells have demonstrated 25% efficiency; however, commercial cells have efficiencies of 16% - 20% resulting from a focus on implementation processes geared to rapid throughput and low cost, thereby reducing the energy pay-back time. An example would be the use of metal pastes which dissolve the dielectric during the firing process as opposed to lithographically defined contacts. With current trends of single-crystal silicon photovoltaic (PV) module prices down to 0.60/W, almost all other PV technologies are challenged to remain cost competitive. This presents a unique opportunity in revisiting the PV cell fabrication process and incorporating moderately more expensive IC process practices into PV manufacturing. While they may drive the cost toward a 1/W benchmark, there is substantial room to "experiment", leading to higher efficiencies which will help maintain the overall system cost. This work entails a turn-key process designed to provide a platform for rapid evaluation of novel materials and processes. A two-step lithographic process yielding a baseline 11% - 13% efficient cell is described. Results of three studies have shown improvements in solar cell output parameters due to the inclusion of a back-surface field implant, a higher emitter doping and also an additional RCA Clean.

  2. Studies of phosphorus Gaussian profile emitter silicon solar cells

    Directory of Open Access Journals (Sweden)

    N. Stem

    2001-01-01

    Full Text Available Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (h @ 21.60-21.74%with doping levelsnus = 1x10(19 - 5x10(18 (cm-3 and (1.2-2.0 mum emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (eta = 21.82-21.92%, with Ns = 1x10(20 (cm-3 with 2.0 mum thickness under metal-contacted surface and Ns = 1x10(19 - 5x10(18 (cm-3 with (1.2-2.0 mum thickness range, (sheet resistance range 90-100 W/ under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable.

  3. Single crystalline silicon solar cells with rib structure

    Science.gov (United States)

    Yoshiba, Shuhei; Hirai, Masakazu; Abe, Yusuke; Konagai, Makoto; Ichikawa, Yukimi

    2017-02-01

    To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer's strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC) could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  4. Single crystalline silicon solar cells with rib structure

    Directory of Open Access Journals (Sweden)

    Shuhei Yoshiba

    2017-02-01

    Full Text Available To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer’s strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  5. Optimization methods and silicon solar cell numerical models

    Science.gov (United States)

    Girardini, K.; Jacobsen, S. E.

    1986-01-01

    An optimization algorithm for use with numerical silicon solar cell models was developed. By coupling an optimization algorithm with a solar cell model, it is possible to simultaneously vary design variables such as impurity concentrations, front junction depth, back junction depth, and cell thickness to maximize the predicted cell efficiency. An optimization algorithm was developed and interfaced with the Solar Cell Analysis Program in 1 Dimension (SCAP1D). SCAP1D uses finite difference methods to solve the differential equations which, along with several relations from the physics of semiconductors, describe mathematically the performance of a solar cell. A major obstacle is that the numerical methods used in SCAP1D require a significant amount of computer time, and during an optimization the model is called iteratively until the design variables converge to the values associated with the maximum efficiency. This problem was alleviated by designing an optimization code specifically for use with numerically intensive simulations, to reduce the number of times the efficiency has to be calculated to achieve convergence to the optimal solution.

  6. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  7. Recent developments in amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Beneking, C.; Rech, B.; Foelsch, J.; Wagner, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik

    1996-03-01

    Two examples of recent advances in the field of thin-film, amorphous hydrogenated silicon (a-Si:H) pin solar cells are described: the improved understanding and control of the p/i interface, and the improvement of wide-bandgap a-Si:H material deposited at low substrate temperature as absorber layer for cells with high stabilized open-circuit voltage. Stacked a-Si:H/a-Si:H cells incorporating these concepts exhibit less than 10% (relative) efficiency degradation and show stabilized efficiencies as high as 9 to 10% (modules 8 to 9%). The use of low-gap a-Si:H and its alloys like a-SiGe:H as bottom cell absorber materials in multi-bandgap stacked cells offers additional possibilities. The combination of a-Si:H based top cells with thin-film crystalline silicon-based bottom cells appears as a promising new trend. It offers the perspective to pass significantly beyond the present landmark of 10% module efficiency reached by the technology utilizing exclusively amorphous silicon-based absorber layers, while keeping its advantages of potentially low-cost production. (orig.) 47 refs.

  8. Laser fired back contact for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tucci, M. [ENEA Research Center Casaccia via Anguillarese 301, 00123 Roma (Italy)], E-mail: mario.tucci@casaccia.enea.it; Talgorn, E.; Serenelli, L.; Salza, E.; Izzi, M.; Mangiapane, P. [ENEA Research Center Casaccia via Anguillarese 301, 00123 Roma (Italy)

    2008-08-30

    To get high efficiency c-Si solar cells reduction of surface recombination losses and good surface passivation and/or Back Surface Field (BSF) formation are needed. Most industrial solar cells are made covering the back area with screen-printed Al, forming an Al-BSF upon firing step, with a Back Reflectance of 65% and a Back Surface Recombination Velocity (BSRV) of 1000 cm/s on 1 {omega}cm Si wafer. Simulations reveal that PV efficiency can increase up to 18% after improving the BSRV to {<=} 200 cm/s and the BR to > 95%. The aim of this work is to get these goals by a laser fired back contact with low temperature passivation of the remainder of the back. This can be obtained by a double layer of PECVD Amorphous Silicon and Silicon Nitride, on which a spin-on Boron dopant layer is deposited. The structure is completed by 2 {mu}m thick e-beam evaporated Al. The formation of an improved local BSF is obtained using a Nd:YAG pulsed laser, which promotes an Al and B simultaneous diffusion trough the passivation layers. Several cells, using this structure, have been fabricated on different substrates. By fitting procedure of cell Internal Quantum Efficiency we have extracted several parameters as surface recombination velocity, diffusion length and internal reflection that are comparable with the state of art of the cells having effective back surface field.

  9. Effect of silicon solar cell processing parameters and crystallinity on mechanical strength

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, V.A.; Yunus, A.; Janssen, M.; Richardson, I.M. [Delft University of Technology, Department of Materials Science and Engineering, Delft (Netherlands); Bennett, I.J. [Energy Research Centre of the Netherlands, Solar Energy, PV Module Technology, Petten (Netherlands)

    2011-01-15

    Silicon wafer thickness reduction without increasing the wafer strength leads to a high breakage rate during subsequent handling and processing steps. Cracking of solar cells has become one of the major sources of solar module failure and rejection. Hence, it is important to evaluate the mechanical strength of solar cells and influencing factors. The purpose of this work is to understand the fracture behavior of silicon solar cells and to provide information regarding the bending strength of the cells. Triple junctions, grain size and grain boundaries are considered to investigate the effect of crystallinity features on silicon wafer strength. Significant changes in fracture strength are found as a result of metallization morphology and crystallinity of silicon solar cells. It is observed that aluminum paste type influences the strength of the solar cells. (author)

  10. Simulation and Optimization of Silicon Solar Cell Back Surface Field

    Directory of Open Access Journals (Sweden)

    Souad TOBBECHE

    2015-11-01

    Full Text Available In this paper, TCAD Silvaco (Technology Computer Aided Design software has been used to study the Back Surface Field (BSF effect of a p+ silicon layer for a n+pp+ silicon solar cell. To study this effect, the J-V characteristics and the external quantum efficiency (EQE are simulated under AM 1.5 illumination for two types of cells. The first solar cell is without BSF (n+p structure while the second one is with BSF (n+pp+ structure. The creation of the BSF on the rear face of the cell results in efficiency h of up to 16.06% with a short-circuit current density Jsc = 30.54 mA/cm2, an open-circuit voltage Voc = 0.631 V, a fill factor FF = 0.832 and a clear improvement of the spectral response obtained in the long wavelengths range. An electric field and a barrier of potential are created by the BSF and located at the junction p+/p with a maximum of 5800 V/cm and 0.15 V, respectively. The optimization of the BSF layer shows that the cell performance improves with the p+ thickness between 0.35 – 0.39 µm, the p+ doping dose is about 2 × 1014 cm-2, the maximum efficiency up to 16.19 %. The cell efficiency is more sensitive to the value of the back surface recombination velocity above a value of 103 cm/s in n+p than n+pp+ solar cell.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9565

  11. Silver Nanoparticle Enhanced Freestanding Thin-Film Silicon Solar Cells

    Science.gov (United States)

    Winans, Joshua David

    As the supply of fossil fuels diminishes in quantity the demand for alternative energy sources will consistently increase. Solar cells are an environmentally friendly and proven technology that suffer in sales due to a large upfront cost. In order to help facilitate the transition from fossil fuels to photovoltaics, module costs must be reduced to prices well below $1/Watt. Thin-film solar cells are more affordable because of the reduced materials costs, but lower in efficiency because less light is absorbed before passing through the cell. Silver nanoparticles placed at the front surface of the solar cell absorb and reradiate the energy of the light in ways such that more of the light ends being captured by the silicon. Silver nanoparticles can do this because they have free electron clouds that can take on the energy of an incident photon through collective action. This bulk action of the electrons is called a plasmon. This work begins by discussing the economics driving the need for reduced material use, and the pros and cons of taking this step. Next, the fundamental theory of light-matter interaction is briefly described followed by an introduction to the study of plasmonics. Following that we discuss a traditional method of silver nanoparticle formation and the initial experimental studies of their effects on the ability of thin-film silicon to absorb light. Then, Finite-Difference Time-Domain simulation software is used to simulate the effects of nanoparticle morphology and size on the scattering of light at the surface of the thin-film.

  12. Influence of black silicon surfaces on the performance of back-contacted back silicon heterojunction solar cells.

    Science.gov (United States)

    Ziegler, Johannes; Haschke, Jan; Käsebier, Thomas; Korte, Lars; Sprafke, Alexander N; Wehrspohn, Ralf B

    2014-10-20

    The influence of different black silicon (b-Si) front side textures prepared by inductively coupled reactive ion etching (ICP-RIE) on the performance of back-contacted back silicon heterojunction (BCB-SHJ) solar cells is investigated in detail regarding their optical performance, black silicon surface passivation and internal quantum efficiency. Under optimized conditions the effective minority carrier lifetime measured on black silicon surfaces passivated with Al(2)O(3) can be higher than lifetimes measured for the SiO(2)/SiN(x) passivation stack used in the reference cells with standard KOH textures. However, to outperform the electrical current of silicon back-contact cells, the black silicon back-contact cell process needs to be optimized with aspect to chemical and thermal stability of the used dielectric layer combination on the cell.

  13. Development of Solar Grade (SoG) Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Joyce, David B; Schmid, Frederick

    2008-01-18

    The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

  14. Efficiency Enhancement of Nanoporous Silicon/Polycrystalline-Silicon Solar Cells by Application of Trenched Electrodes

    Directory of Open Access Journals (Sweden)

    Kuen-Hsien Wu

    2014-01-01

    Full Text Available Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si solar cells with nanoporous silicon (NPS surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100 poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE process and Cr/Al double-layered metal was then deposited to fill the trenches and construct trenched-electrode-contacts (TEC’s. Cells with TEC structures (called “TEC cells” obtained 5.5 times higher short-circuit current than that of cells with planar electrode contacts (called “non-TEC cells”. Most significantly, a TEC cell achieved 8 times higher conversion efficiency than that of a non-TEC cell. The enhanced short-circuit current and conversion efficiency in TEC cells were ascribed to the reduced overall series resistance of devices. In a TEC cell, trenched electrodes provided photocurrent flowing routes that directly access the poly-Si substrates without passing through the high resistive NPS layers. Therefore, the application of NPS surface layers with trenched electrodes is a novel approach to development of highly efficient poly-Si solar cells.

  15. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires.

    Science.gov (United States)

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Roca i Cabarrocas, Pere

    2012-05-17

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  16. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  17. Development of thin wraparound junction silicon solar cells

    Science.gov (United States)

    Ho, F.; Iles, P. A.

    1981-01-01

    The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

  18. Influence of texture feature size on spherical silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    HAYASHI Shota; MINEMOTO Takashi; TAKAKURA Hideyuki; HAMAKAWA Yoshihiro

    2006-01-01

    The effects of surface texturing on spherical silicon solar cells were investigated. Surface texturing for spherical Si solar cells was prepared by immersing p-type spherical Si crystals in KOH solution with stirring. Two kinds of texture feature sizes (1 and 5μm pyramids) were prepared by changing stirring speed. After fabrication through our baseline processes, these cells were evaluated by solar cell performance and external quantum efficiency. The cell with 1 and 5μm pyramids shows the short circuit current density ( Jsc ) value of 31.9 and 33.2 mA·cm-2 , which is 9% and 13% relative increase compared to the cell without texturing. Furthermore, the cell with 5 μm pyramids has a higher open-circuit voltage (0.589 V) than the cell with 1 μm pyramids (0.577 V). As a result, the conversion efficiency was improved from 11.4% for the cell without texturing to 12.1% for the cell with 5 μm pyramids.

  19. Progress in amorphous silicon solar cells produced by reactive sputtering

    Science.gov (United States)

    Moustakas, T. D.

    The photovoltaic properties of reactively sputtered amorphous silicon are reviewed and it is shown that efficient PIN solar cells can be fabricated by the method of sputtering. The photovoltaic properties of the intrinsic films correlate with their structural and compositional inhomogeneities. Hydrogen incorporation and small levels of phosphorus and boron impurities also affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. The optical and transport properties of the doped P and N-films were found to depend sensitively on the amount of hydrogen and boron or phosphorus incorporation into the films as well as on their degree of crystallinity. Combination of the best intrinsic and doped films leads to PIN solar cell structures generating J(sc) of 13 mA/sq cm and V(oc) of between 0.85 to 0.95 volts. The efficiency of these devices, 5 to 6 percent, is limited by the low FF, typically about 50 percent. As a further test to the potential of this technology efficient tandem solar cell structures were fabricated, and device design concepts, such as the incorporation of optically reflective back contacts were tested.

  20. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Silicon Purification by a New Type of Solar Furnace

    Science.gov (United States)

    Chen, Ying-Tian; Lim, Chern-Sing; Ho, Tso-Hsiu; Lim, Boon-Han; Wang, Yi-Nan

    2009-07-01

    We propose a new method to reveal a direct transformation from solar energy to solar electricity. Instead of using electricity in the process, we use concentrated solar rays with a crucibleless process to upgrade metallurgical silicon into solar-grade silicon feedstock.

  1. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    Energy Technology Data Exchange (ETDEWEB)

    Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain [CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland); Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland)

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  2. Influence of Ring Oxidation-Induced Stack Faults on Efficiency in Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    ZHOU Chun-Lan; WANG Wen-Jing; LI Hai-Ling; ZHAO Lei; DIAO Hong-Wei; LI Xu-Dong

    2008-01-01

    @@ We observe a strong correlation between the ring oxidation-induced stack faults (OISF) formed in the course of phosphor diffusion and the efficiency of Czochralski-grown silicon solar cells. The main reason for ring-OISF formation and growth in substrate is the silicon oxidation and phosphorus diffusion process induced silicon self-interstitial point defect during POCl3 diffusion. The decreasing of minority carrier diffusion length in crystal silicon solar cell induced by ring-OISF defects is identified to be one of the major causes of efficiency loss.

  3. Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

    2009-05-15

    In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

  4. Reduction Bending of Thin Crystalline Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    SHEN Lan-xian; LIU Zu-ming; LIAO Hua; TU Jie-lei; DENG Shu-kang

    2009-01-01

    Reported are the results of reduction the bending of thin crystalline silicon solar ceils after printing and sintering of back electrode by changing the back electrode paste and adjusting the screen printing parameters without effecting the electrical properties of the cell. Theory and experiments showed that the bending of the cell is changed with its thickness of suhstrate, the thinner cell, the more serious bending. The bending of the cell is decreased with the thickness decrease of the back contact paste. The substrate with the thickness of 190μm printing with sheet aluminum paste shows a relatively lower bend compared with that of the substrate printing with ordinary aluminum paste, and the minimum bend is 0.55 mm which is reduced by52%.

  5. Review of silicon solar cells for high concentrations

    Science.gov (United States)

    Schwartz, R. J.

    1982-06-01

    The factors that limit the performance of high concentration silicon solar cells are reviewed. The design of a conventional high concentration cell is discussed, together with the present state of the art. Unconventional cell designs that have been proposed to overcome the limitations of the conventional design are reviewed and compared. The current status of unconventional cells is reviewed. Among the unconventional cells discussed are the interdigitated back-contact cell, the double-sided cell, the polka dot cell, and the V-groove cell. It is noted that all the designs for unconventional cells require long diffusion lengths for high efficiency operation, even though the demands in this respect are less for those cells with the optical path longer than the diffusion path.

  6. Evaluation and optimization of silicon sheet solar cells

    Science.gov (United States)

    Yoo, H.; Iles, P.; Tanner, D.; Pollock, G.; Uno, F.

    1980-01-01

    This paper describes the results and procedures to evaluate and improve the efficiency of solar cells made from various unconventional silicon sheets. The performance parameters included photovoltaic characteristics, spectral response, dark I-V characteristics, and diffusion length. The evaluation techniques used provided accurate and reliable information on sheet performance, and self-consistent results were obtained from the various measurement techniques used. Minority carrier diffusion length (L) was shown to be the ultimate limiting factor for the sheet cell performance (efficiency) and other back-up measurements confirmed this L-dependence. Limited efforts were made to identify defects which influence cell performance, and to use some improved process methods to increase cell efficiency.

  7. Study of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, H.; Mai, Y. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Wan, M. [Department of Chemistry and Material Science, Hunan Institute of Humanities, Science and Technology, Loudi 417000 (China); Gao, J.; Wang, Y.; He, T.; Feng, Y.; Yin, J.; Du, J.; Wang, J.; Sun, R. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China)

    2013-07-31

    In this study, the reflection properties of transparent conductive oxide (TCO) films i.e. aluminum doped zinc oxide (ZnO:Al) and boron doped zinc oxide (ZnO:B) films plus aluminum (Al) films or white polyvinyl butyral (PVB) foils, which are usually used as the combined back reflectors of thin film silicon solar cells, are investigated. Sputtered ZnO:Al films were etched in diluted hydrochloric acid (1%) to achieve rough surface structures while textured ZnO:B films were directly prepared by a low pressure chemical vapor deposition technique. It is found that the rough TCO/Al reflectors show a low total reflection, which is mainly due to the parasitic absorption by the surface plasmons at the rough TCO/Al interfaces as well as the absorption in the TCO films. Differently, the rough TCO/white PVB foil reflectors display a slightly high light reflection regardless of the influence of the rough interface without the excitation of surface plasmons. Thus, the TCO/white PVB foil back reflectors could be a good candidate with respect to light utilization when they are applied in thin film silicon solar cells. - Highlights: • White polyvinyl butyral and transparent conductive oxide materials are used. • The reflection properties of TCO/Al and TCO/white PVB foil reflectors are studied. • The ZnO:Al and ZnO:B films are used as two types of TCO materials. • TCO/white PVB foil reflector shows a high reflection compared to TCO/Al reflector.

  8. Antireflection properties and solar cell application of silicon nanoscructures

    Institute of Scientific and Technical Information of China (English)

    Yue Huihui; Jia Rui; Chen Chen; Ding Wuchang; Wu Deqi; Liu Xinyu

    2011-01-01

    Silicon nanowire arrays (SiNWAs) are fabricated on polished pyramids of textured Si using an aqueous chemical etching method.The silicon nanowires themselves or hybrid structures of nanowires and pyramids both show strong anti-reflectance abilities in the wavelength region of 300-1000 nm,and reflectances of 2.52% and less than 8% are achieved,respectively.A 12.45% SiNWAs-textured solar cell (SC) with a short circuit current of 34.82 mA/cm2 and open circuit voltage (Voc) of 594 mV was fabricated on 125 × 125 mm2 Si using a conventional process including metal grid printing.It is revealed that passivation is essential for hybrid structure textured SCs,and Voc can be enlarged by 28.6% from 420 V to 560 mV after the passivation layer is deposited.The loss mechanism of SiNWA SC was investigated in detail by systematic comparison of the basic parameters and external quantum efficiency (EQE) of samples with different fabrication processes.It is proved that surface passivation and fabrication of a metal grid are critical for high efficiency SiNWA SC,and the performance of SiNWA SC could be improved when fabricated on a substrate with an initial PN junction.

  9. Photovoltaic solar panels of crystalline silicon: Characterization and separation.

    Science.gov (United States)

    Dias, Pablo Ribeiro; Benevit, Mariana Gonçalves; Veit, Hugo Marcelo

    2016-03-01

    Photovoltaic panels have a limited lifespan and estimates show large amounts of solar modules will be discarded as electronic waste in a near future. In order to retrieve important raw materials, reduce production costs and environmental impacts, recycling such devices is important. Initially, this article investigates which silicon photovoltaic module's components are recyclable through their characterization using X-ray fluorescence, X-ray diffraction, energy dispersion spectroscopy and atomic absorption spectroscopy. Next, different separation methods are tested to favour further recycling processes. The glass was identified as soda-lime glass, the metallic filaments were identified as tin-lead coated copper, the panel cells were made of silicon and had silver filaments attached to it and the modules' frames were identified as aluminium, all of which are recyclable. Moreover, three different components segregation methods have been studied. Mechanical milling followed by sieving was able to separate silver from copper while chemical separation using sulphuric acid was able to detach the semiconductor material. A thermo gravimetric analysis was performed to evaluate the use of a pyrolysis step prior to the component's removal. The analysis showed all polymeric fractions present degrade at 500 °C.

  10. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Bolen, M. L.; Grover, S.; Teplin, C. W.; Bobela, D.; Branz, H. M.; Stradins, P.

    2012-06-01

    Post-deposition hydrogenation by remote plasma significantly improves performance of heteroepitaxial silicon solar cells. Heteroepitaxial deposition of thin crystal silicon on sapphire for photovoltaics (PV) is an excellent model system for the study and improvement of deposition on inexpensive Al2O3-coated (100) biaxially-textured metal foils. Without hydrogenation, PV conversion efficiencies are less than 1% on our model system. Performance is limited by carrier recombination at electrically active dislocations that result from lattice mismatch, and other defects. We find that low-temperature hydrogenation at 350 degrees C is more effective than hydrogenation at 610 degrees C. In this work, we use measurements such as spectral quantum efficiency, secondary ion mass spectrometry (SIMS), and vibrational Si-H spectroscopies to understand the effects of hydrogenation on the materials and devices. Quantum efficiency increases most at red and green wavelengths, indicating hydrogenation is affecting the bulk more than the surface of the cells. SIMS shows there are 100X more hydrogen atoms in our cells than dangling bonds along dislocations. Yet, Raman spectroscopy indicates that only low temperature hydrogenation creates Si-H bonds; trapped hydrogen does not stably passivate dangling-bond recombination sites at high temperatures.

  11. SUBSTRATE MATERIALS FOR POLY-CSiTF SOLAR CELLS:OPTIMIZATION OF SILICON SHEET FROM POWDER

    Institute of Scientific and Technical Information of China (English)

    Q. Ban; H. Shen; X.J. Wang; X.W. Zou; Z.C. Liang

    2005-01-01

    The optimization of silicon sheet from powder (SSP) technology as polycrystalline silicon thin film (poly-CSiTF) solar cells' substrate materials is studied by orthogonal design experimental method. Based on technological optimization of SSP prepared from electronic grade silicon powder, SSP solar cell devices with simple structure are prepared and the effect of SSP substrate is discussed. Up to now, the conversion efficiency of the prepared solar cells on low purity SSP substrate with fundamental structure has reached 8.25% (with area of 1 cm×1 cm).

  12. Sinusoidal nanotextures for light management in silicon thin-film solar cells

    Science.gov (United States)

    Köppel, G.; Rech, B.; Becker, C.

    2016-04-01

    Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

  13. Biomimetic and plasmonic hybrid light trapping for highly efficient ultrathin crystalline silicon solar cells.

    Science.gov (United States)

    Zhang, Y; Jia, B; Gu, M

    2016-03-21

    Designing effective light-trapping structures for the insufficiently absorbed long-wavelength light in ultrathin silicon solar cells represents a key challenge to achieve low cost and highly efficient solar cells. We propose a hybrid structure based on the biomimetic silicon moth-eye structure combined with Ag nanoparticles to achieve advanced light trapping in 2 μm thick crystalline silicon solar cells approaching the Yablonovitch limit. By synergistically using the Mie resonances of the silicon moth-eye structure and the plasmonic resonances of the Ag nanoparticles, the integrated absorption enhancement achieved across the usable solar spectrum is 69% compared with the cells with the conventional light trapping design. This is significantly larger than both the silicon moth-eye structure (58%) and Ag nanoparticle (41%) individual light trapping. The generated photocurrent in the 2 μm thick silicon layer is as large as 33.4 mA/cm2, which is equivalent to that generated by a 30 μm single-pass absorption in the silicon. The research paves the way for designing highly efficient light trapping structures in ultrathin silicon solar cells.

  14. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    Science.gov (United States)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  15. Simulation of hetero-junction silicon solar cells with AMPS-1D

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, Norberto; Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D. F. (Mexico)

    2010-01-15

    Mono- and poly-crystalline silicon solar cell modules currently represent between 80% and 90% of the PV world market. The reasons are the stability, robustness and reliability of this kind of solar cells as compared to those of emerging technologies. Then, in the mid-term, silicon solar cells will continue playing an important role for their massive terrestrial application. One important approach is the development of silicon solar cells processed at low temperatures (less than 300 C) by depositing amorphous silicon layers with the purpose of passivating the silicon surface, and avoiding the degradation suffered by silicon when processed at temperatures above 800 C. This kind of solar cells is known as HIT cells (hetero-junction with an intrinsic thin amorphous layer) and are already produced commercially (Sanyo Ltd.), reaching efficiencies above 20%. In this work, HIT solar cells are simulated by means of AMPS-1D, which is a program developed at Pennsylvania State University. We shall discuss the modifications required by AMPS-1D for simulating this kind of structures since this program explicitly does not take into account interfaces with high interfacial density of states as occurs at amorphous-crystalline silicon hetero-junctions. (author)

  16. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  17. Plasmonic nanomesh sandwiches for ultrathin film silicon solar cells

    Science.gov (United States)

    Gao, Tongchuan; Wang, Baomin; Leu, Paul W.

    2017-02-01

    We theoretically investigate the strategy of integrating metal nanoparticles (NPs)/nanomeshes (NMs) into the top and/or bottom of crystalline silicon (c-Si) thin film solar cells for light trapping and enhanced carrier collection. C-Si thin films exhibit absorption resonances corresponding to Fabry-Pérot modes. Frontside metal NPs enhance absorption by additionally coupling light into localized surface plasmon resonances and c-Si waveguide modes, while a frontside metal NM increases absorption by coupling light into surface plasmon polaritons and c-Si waveguide modes. The frontside metal NM also functions as a flexible top electrode, which may replace conventional brittle transparent conductive oxide thin films. The backside metal NM exhibits enhanced absorption due to the coupling of light into c-Si waveguide modes and the cavity modes within the holes of metal NM. We illustrate how the optimal metal NM sandwich, consisting of NMs on both sides of a 300 nm thick c-Si with an appropriate antireflection coating (ARC), achieves a 72.9% enhancement in short-circuit current density compared with that of a 300 nm thick c-Si thin film solar cell with 100 nm thick Si3N4 ARC and 300 nm thick Ag back reflector. The current generation in the metal NM sandwich is more in the center of the thin film such that there should be less surface recombination. The uniform current generation throughout the film results in less overall recombination.

  18. Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures

    Science.gov (United States)

    Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, Senpo; Xiu, Fei; Ho, Johnny C.

    2016-09-01

    Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices.

  19. A study of efficiency in low resistivity silicon solar cells

    Science.gov (United States)

    Dunbar, P. M.; Hauser, J. R.

    1976-01-01

    A general device-analysis program has been utilized to study the efficiency of silicon solar cells. The analysis is applied to specific geometries of both n(+)-p and n(+)-p-p(+) solar cells, and involves a numerical solution of the basic transport and continuity equations. This approach allows solutions that are free of typical limiting assumptions involved in solving the device equations as well as solutions relating to lifetime, mobility variations, and diffused-region profiles. The analysis includes available empirical information on diffusion length, mobility, and lifetime as a function of doping, as well as a Gaussian profile for the diffused region. Results are presented which illustrate the limitations of efficiency as a function of doping. It is found that the maximum efficiencies for both types of cell converge at lower resistivities to around 16% with air-mass-zero radiation and a single-layer absorbing-SiO antireflecting film. It is also found that the minority-carrier lifetime, both in the n(+) surface and p-type bulk regions, presents serious limitations to conversion efficiency, particularly in the low-resistivity cells.

  20. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  1. Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures

    Science.gov (United States)

    Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C.

    2016-01-01

    Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices. PMID:27671709

  2. Physics and technology of amorphous-crystalline heterostructure silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sark, Wilfried G.J.H.M. van [Utrecht Univ. (Netherlands). Copernicus Institute, Science Technology and Society; Roca, Francesco [Unita Tecnologie Portici, Napoli (Italy). ENEA - Agenzia Nazionale per le Nuove Tecnologie, l' Energia e lo Sviluppo Economico Sostenibile; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie (Germany). Inst. Silizium-Photovoltaik

    2012-07-01

    The challenge of developing photovoltaic (PV) technology to a cost-competitive alternative for established energy sources can be achieved using simple, high-throughput mass-production compatible processes. Issues to be addressed for large scale PV deployment in large power plants or in building integrated applications are enhancing the performance of solar energy systems by increasing solar cell efficiency, using low amounts of materials which are durable, stable, and abundant on earth, and reducing manufacturing and installation cost. Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both ''emitter'' and ''base-contact/back surface field'' on both sides of a thin crystalline silicon wafer-base (c-Si) where the photogenerated electrons and holes are generated; at the same time, a Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. (orig.)

  3. A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells.

    Science.gov (United States)

    Li, Yingfeng; Li, Meicheng; Fu, Pengfei; Li, Ruike; Song, Dandan; Shen, Chao; Zhao, Yan

    2015-06-26

    Silicon nanorod based radial-junction solar cells are competitive alternatives to traditional planar silicon solar cells. In various silicon nanorods, nanocone is always considered to be better than nanowire in light-absorption. Nevertheless, we find that this notion isn't absolutely correct. Silicon nanocone is indeed significantly superior over nanowire in light-concentration due to its continuous diameters, and thus resonant wavelengths excited. However, the concentrated light can't be effectively absorbed and converted to photogenerated carriers, since its propagation path in silicon nanocone is shorter than that in nanowire. The results provide critical clues for the design of silicon nanorod based radial-junction solar cells.

  4. Effects of heat treatment on epitaxial silicon solar cells on metallurgical silicon substrates

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Kazmerski, L. L.; Whitney, R.; Lin, C. L.; Davis, R. M.

    1981-12-01

    A preparation of acid extracted metallurgical grade silicon as a large-grain substrate for solar cells is described. Metallic impurities which normally accumulate on the grain boundaries of pulverized Si were removed by 400 hr of aqua regia refluxing. Secondary ion mass spectrometry (SIMS) revealed that aluminum and iron concentrations were significantly reduced, and the Si was made into sheets by unidirectional solidification on an RF-heated graphite plate. Solidification at 1-2 cm/min yielded a (110) crystallite orientation; SIMS determined that remaining impurities were uniformly diffuse, and heat treatment in He at 700 C resulted in precipitation of metallic impurities onto the grain boundaries. Trichlorosilane was thermally reduced to form an epitaxial film on the Si substrate, and 37 sq cm cells were fabricated with an efficiency of 8.95%.

  5. Optimized scalable stack of fluorescent solar concentrator systems with bifacial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Martínez Díez, Ana Luisa, E-mail: a.martinez@itma.es [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain); Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gutmann, Johannes; Posdziech, Janina; Rist, Tim; Goldschmidt, Jan Christoph [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Plaza, David Gómez [Fundación ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avilés (Spain)

    2014-10-21

    In this paper, we present a concentrator system based on a stack of fluorescent concentrators (FCs) and a bifacial solar cell. Coupling bifacial solar cells to a stack of FCs increases the performance of the system and preserves its efficiency when scaled. We used an approach to optimize a fluorescent solar concentrator system design based on a stack of multiple fluorescent concentrators (FC). Seven individual fluorescent collectors (20 mm×20 mm×2 mm) were realized by in-situ polymerization and optically characterized in regard to their ability to guide light to the edges. Then, an optimization procedure based on the experimental data of the individual FCs was carried out to determine the stack configuration that maximizes the total number of photons leaving edges. Finally, two fluorescent concentrator systems were realized by attaching bifacial silicon solar cells to the optimized FC stacks: a conventional system, where FC were attached to one side of the solar cell as a reference, and the proposed bifacial configuration. It was found that for the same overall FC area, the bifacial configuration increases the short-circuit current by a factor of 2.2, which is also in agreement with theoretical considerations.

  6. Boron-doped silicon surfaces from $B_2H_6$ passivated by ALD $Al_2O_3$ for solar cells

    NARCIS (Netherlands)

    Mok, K.R.C. (Caroline); Loo, van de Bas W.H.; Vlooswijk, Ard H.G.; Kessels, W.M.M. (Erwin); Nanver, Lis K.

    2015-01-01

    A p+-doping method for silicon solar cells is presented whereby boron atoms from a pure boron (PureB) layer deposited by chemical vapor deposition using B2H6 as precursor were thermally diffused into silicon. The applicability of this doping process for the doped surfaces of silicon solar cells was

  7. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

    1987-02-01

    A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

  8. Prediction model for the diffusion length in silicon-based solar cells

    Institute of Scientific and Technical Information of China (English)

    Cheknane A; Benouaz T

    2009-01-01

    d to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.

  9. Simulation and Optimization of n-Type PERL Silicon Solar Cell Structure

    Directory of Open Access Journals (Sweden)

    William R. Taube

    2011-01-01

    Full Text Available Optimization of structure and process parameters of PERL (Passivated Emitter Rear Locally Diffused silicon solar cell using SILVACO software package has been carried out. PERL single junction silicon solar cells are reported by researchers to have high efficiency (~ 20-25 % and are promising for further improvement. Optimization is based on process and device simulation in SILVACO software package and integrating a Response Surface Methodology for optimal solution. Optimization of texture dimensions and ARC is followed by process parameters optimization for the emitter and base for best performance solar cell. A solar cell of efficiency 24 % is demonstrated by the simulation.

  10. A New Method to Measure Trap Characteristics of Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    MA Xun; LIU Zu-Ming; QU Sheng; WANG Shu-Rong; HAO Rui-Ting; LIAO Hua

    2011-01-01

    @@ A new method to measure trap characteristics in crystalline silicon solar cells is presented.Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region.Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050 nm with and without bias light.The effects of wavelength and intensity of bias light on the measurement results are also discussed.The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available.Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.%A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.

  11. Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

    OpenAIRE

    Savin, Hele; Repo, Päivikki; Von Gastrow, Guillaume; Ortega, Pablo; Calle, Eric; Garín, Moises; Alcubilla, Ramon

    2015-01-01

    The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at t...

  12. The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

    NARCIS (Netherlands)

    Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

    2013-01-01

    Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxid

  13. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  14. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deckers, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium); Bourgeois, E. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Jivanescu, M. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Abass, A. [Photonics Research Group (INTEC), Ghent University-imec, Sint-Pietersnieuwstraat 41, B-9000 Ghent (Belgium); Van Gestel, D.; Van Nieuwenhuysen, K.; Douhard, B. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); D' Haen, J.; Nesladek, M.; Manca, J. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Gordon, I.; Bender, H. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); Stesmans, A. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Mertens, R.; Poortmans, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium)

    2015-03-31

    We have investigated fine grained polycrystalline silicon thin films grown by direct chemical vapor deposition on oxidized silicon substrates. More specifically, we analyze the influence of the doping type on the properties of this model polycrystalline silicon material. This includes an investigation of defect passivation and benchmarking of minority carrier properties. In our investigation, we use a variety of characterization techniques to probe the properties of the investigated polycrystalline silicon thin films, including Fourier Transform Photoelectron Spectroscopy, Electron Spin Resonance, Conductivity Activation, and Suns-Voc measurements. Amphoteric silicon dangling bond defects are identified as the most prominent defect type present in these layers. They are the primary recombination center in the relatively lowly doped polysilicon thin films at the heart of the current investigation. In contrast with the case of solar cells based on Czochralski silicon or multicrystalline silicon wafers, we conclude that no benefit is found to be associated with the use of n-type dopants over p-type dopants in the active absorber of the investigated polycrystalline silicon thin-film solar cells. - Highlights: • Comparison of n- and p-type absorbers for thin-film poly-Si solar cells • Extensive characterization of the investigated layers' characteristics • Literature review pertaining the use of n-type and p-type dopants in silicon.

  15. Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

    Science.gov (United States)

    Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

    2014-10-28

    Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

  16. An Investigation of High Performance Heterojunction Silicon Solar Cell Based on n-type Si Substrate

    Directory of Open Access Journals (Sweden)

    N. Memarian

    2016-12-01

    Full Text Available In this study, high efficient heterojunction crystalline silicon solar cells without using an intrinsic layer were systematically investigated. The effect of various parameters such as work function of transparent conductive oxide (ϕTCO, density of interface defects, emitter and crystalline silicon thickness on heterojunction silicon solar cell performance was studied. In addition, the effect of band bending and internal electric field on solar cell performance together with the dependency of cell performance on work function and reflectance of the back contact were investigated in full details. The optimum values of the solar cell properties for the highest efficiency are presented based on the results of the current study. The results represent a complete set of optimum values for a heterojunction solar cell with high efficiency up to the 24.1 % with VOC  0.87 V and JSC  32.69 mAcm – 2.

  17. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  18. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    Science.gov (United States)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  19. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu [Arizona State Univ., Mesa, AZ (United States); Holman, Zachary [Arizona State Univ., Mesa, AZ (United States)

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  20. Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

    Science.gov (United States)

    Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

    1984-01-01

    The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

  1. Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2010-03-15

    Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

  2. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    Science.gov (United States)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-10-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al2O3) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  3. Ultrasonic seam welding on thin silicon solar cells

    Science.gov (United States)

    Stofel, E. J.

    1982-01-01

    The ultrathin silicon solar cell has progressed to where it is a serious candidate for future light weight or radiation tolerant spacecraft. The ultrasonic method of producing welds was found to be satisfactory. These ultrathin cells could be handled without breakage in a semiautomated welding machine. This is a prototype of a machine capable of production rates sufficiently large to support spacecraft array assembly needs. For comparative purposes, this project also welded a variety of cells with thicknesses up to 0.23 mm as well as the 0.07 mm ultrathin cells. There was no electrical degradation in any cells. The mechanical pull strength of welds on the thick cells was excellent when using a large welding force. The mechanical strength of welds on thin cells was less since only a small welding force could be used without cracking these cells. Even so, the strength of welds on thin cells appears adequate for array application. The ability of such welds to survive multiyear, near Earth orbit thermal cycles needs to be demonstrated.

  4. Single-walled carbon nanotube/polyaniline/n-silicon solar cells: fabrication, characterization, and performance measurements.

    Science.gov (United States)

    Tune, Daniel D; Flavel, Benjamin S; Quinton, Jamie S; Ellis, Amanda V; Shapter, Joseph G

    2013-02-01

    Carbon nanotube-silicon solar cells are a recently investigated photovoltaic architecture with demonstrated high efficiencies. Silicon solar-cell devices fabricated with a thin film of conductive polymer (polyaniline) have been reported, but these devices can suffer from poor performance due to the limited lateral current-carrying capacity of thin polymer films. Herein, hybrid solar-cell devices of a thin film of polyaniline deposited on silicon and covered by a single-walled carbon nanotube film are fabricated and characterized. These hybrid devices combine the conformal coverage given by the polymer and the excellent electrical properties of single-walled carbon nanotube films and significantly outperform either of their component counterparts. Treatment of the silicon base and carbon nanotubes with hydrofluoric acid and a strong oxidizer (thionyl chloride) leads to a significant improvement in performance.

  5. Light-trapping design for thin-film silicon-perovskite tandem solar cells

    Science.gov (United States)

    Foster, Stephen; John, Sajeev

    2016-09-01

    Using finite-difference time-domain simulations, we investigate the optical properties of tandem silicon/perovskite solar cells with a photonic crystal architecture, consisting of a square-lattice array of inverted pyramids with a center-to-center spacing of 2.5 μm. We demonstrate that near-perfect light-trapping and absorption can be achieved over the 300-1100 nm wavelength range with this architecture, using less than 10 μm (equivalent bulk thickness) of crystalline silicon. Using a one-diode model, we obtain projected efficiencies of over 30% for the two-terminal tandem cell under a current-matching condition, well beyond the current record for single-junction silicon solar cells. The architecture is amenable to mass fabrication through wet-etching and uses a fraction of the silicon of traditional designs, making it an attractive alternative to other silicon-perovskite tandem designs.

  6. Review of physics underlying recent improvements in silicon solar-cell performance

    Science.gov (United States)

    Lindholm, F. A.; Fossum, J. G.

    1980-01-01

    This paper provides a unifying view of the physics of silicon solar cells, and uses it as a basis for explaining how recent improvements in the performance of these cells have been achieved. The unification is facilitated by a region-by-region analysis of the solar cell, which is also used to compare several recently proposed cell structures.

  7. Fabrication and doping methods for silicon nano- and micropillar arrays for solar cell applications: a review

    NARCIS (Netherlands)

    Elbersen, R.; Vijselaar, W.J.C.; Tiggelaar, R.M.; Gardeniers, J.G.E.; Huskens, J.

    2015-01-01

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High den

  8. Ultrathin silicon solar cells with enhanced photocurrents assisted by plasmonic nanostructures

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Stassen, Erik; Mortensen, N. Asger

    2012-01-01

    nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range, while keeping insensitive to the incident angle. These results are paving...

  9. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  10. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Zhaoyun [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Jiangsu University of Science and Technology, Zhenjiang 212003, Jiangsu Province (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2015-04-15

    Highlights: • We introduce an intermediate cadmium telluride quantum dots (CdTe QDs) layer between the organic with silicon nanowires of hybrid solar cells as a down-shifting layer. • The hybrid solar cell got the maximum short circuit current density of 33.5 mA/cm{sup 2}, getting an increase of 15.1% comparing to solar cell without CdTe QDs. • The PCE of the hybrid solar cells with CdTe QDs layer increases 28.8%. - Abstract: We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density–voltage (J–V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (J{sub sc}) of solar cells with CdTe QDs layer can reach 33.5 mA/cm{sup 2}. Compared with the solar cells without CdTe QDs, J{sub sc} has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  11. Effect of light trapping in an amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Iftiquar, S.M., E-mail: iftiquar@skku.edu [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Juyeon; Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jaehyun; Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jinjoo [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Bong, Sungjae [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Sunbo [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-07-31

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V{sub oc}) of 0.87, 0.90 V, short circuit current densities (J{sub sc}) of 14.2, 15.36 mA/cm{sup 2} respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d{sub i}) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d{sub i} while the V{sub oc} and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d{sub i} = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J{sub sc} and red response of the external quantum efficiency to 16.6 mA/cm{sup 2} and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J{sub sc} increases and V{sub oc} decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J{sub sc} improved from 15.4 mA/cm{sup 2} to 16.6 mA/cm{sup 2} due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE.

  12. Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

    Science.gov (United States)

    Grung, B. L.; Heaps, J. D.; Schmit, F. M.; Schuldt, S. B.; Zook, J. D.

    1981-01-01

    The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

  13. Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowires.

    Science.gov (United States)

    Massiot, Inès; Colin, Clément; Sauvan, Christophe; Lalanne, Philippe; Cabarrocas, Pere Roca I; Pelouard, Jean-Luc; Collin, Stéphane

    2013-05-06

    We propose a design to confine light absorption in flat and ultra-thin amorphous silicon solar cells with a one-dimensional silver grating embedded in the front window of the cell. We show numerically that multi-resonant light trapping is achieved in both TE and TM polarizations. Each resonance is analyzed in detail and modeled by Fabry-Perot resonances or guided modes via grating coupling. This approach is generalized to a complete amorphous silicon solar cell, with the additional degrees of freedom provided by the buffer layers. These results could guide the design of resonant structures for optimized ultra-thin solar cells.

  14. Recent Optical and SEM Characterization of Genesis Solar Wind Concentrator Diamond on Silicon Collector

    Science.gov (United States)

    Allton, Judith H.; Rodriquez, M. C.; Burkett, P. J.; Ross, D. K.; Gonzalez, C. P.; McNamara, K. M.

    2013-01-01

    One of the 4 Genesis solar wind concentrator collectors was a silicon substrate coated with diamond-like carbon (DLC) in which to capture solar wind. This material was designed for analysis of solar nitrogen and noble gases [1, 2]. This particular collector fractured during landing, but about 80% of the surface was recovered, including a large piece which was subdivided in 2012 [3, 4, 5]. The optical and SEM imaging and analysis described below supports the subdivision and allocation of the diamond-on-silicon (DOS) concentrator collector.

  15. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    Science.gov (United States)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  16. A study on the key factors affecting the electronic properties of monocrystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ji-cheng; CHEN Yong-min; LI Li; LI Fei; ZHAO Bao-xing

    2009-01-01

    The model of monocrystalline silicon solar cells is established, and the effects of wafer parameters, such as the p-Si (100) substrate thickness, the defect density, and the doping concentration, on the electronic properties of monocrystalline silicon solar cells are analyzed. The results indicate that the solar cells with an A1 back-surface-field will have good electronic properties when the wafers meet the following three conditions: (i) the defect density is less than 1.0×1011 cm-3; (ii) the substrate thickness is in the range of 100 μm to 200 μm.

  17. Design and optimization of ultrathin crystalline silicon solar cells using an efficient back reflector

    Directory of Open Access Journals (Sweden)

    S. Saravanan

    2015-05-01

    Full Text Available Thin film solar cells are cheaper but having low absorption in longer wavelength and hence, an effective light trapping mechanism is essential. In this work, we proposed an ultrathin crystalline silicon solar cell which showed extraordinary performance due to enhanced light absorption in visible and infrared part of solar spectrum. Various designing parameters such as number of distributed Bragg reflector (DBR pairs, anti-reflection layer thickness, grating thickness, active layer thickness, grating duty cycle and period were optimized for the optimal performance of solar cell. An ultrathin silicon solar cell with 40 nm active layer could produce an enhancement in cell efficiency ∼15 % and current density ∼23 mA/cm2. This design approach would be useful for the realization of new generation of solar cells with reduced active layer thickness.

  18. Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Mortensen, N. Asger

    2012-01-01

    cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell......Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar......, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells....

  19. Numerical analysis of monocrystalline silicon solar cells with fine nanoimprinted textured surface

    Science.gov (United States)

    Yoshinaga, Seiya; Ishikawa, Yasuaki; Araki, Shinji; Honda, Tatsuki; Jiang, Yunjiang; Uraoka, Yukiharu

    2017-02-01

    We investigated the surface reflectance of nanoimprinted textures on silicon. Zirconium oxide, which is a wide-bandgap inorganic dielectric material, was used as the texturing material. We performed several calculations to optimize the textures for the production of high-efficiency bulk-type monocrystalline silicon solar cells. Our analysis revealed that nanoimprinted textured solar cells exhibit a lower reverse saturation current density than a solar cell with a conventional etched texture. It was also confirmed that the photocarrier generation rate for a solar cell with a submicron-scale nanoimprinted texture has little dependence on the texture shape. Furthermore, the weighted average reflectance of an optimized nanoimprinted textured solar cell was substantially reduced to 3.72%, suggesting that texture formation by nanoimprint lithography is an extremely effective technology for producing high-efficiency solar cells at a low cost.

  20. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. (Institute of Energy Conversion, Newark, DE (United States))

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  1. Numerical simulations for the effiency improvement of hybrid dye-microcrystalline silicon pin-solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Burdorf, Sven; Bauer, Gottfried Heinrich; Brueggemann, Rudolf [Institut fuer Physik, Carl von Ossietzky Universitaet, Oldenburg (Germany)

    2011-07-01

    Hybrid solar cells consisting of dye sensitizers incorporated in the i-layer of microcrystalline silicon pin solar cell have been proposed and even recently processed. The dye sensitizer molecules are embedded in the matrix and enhance the overall absorption of the dye-matrix system due to their high absorption coefficient in the spectral range interesting for photovoltaic applications. However, the charge transport properties of dyes are quite poor. Microcrystalline silicon on the other hand has acceptable charge transport properties, while the absorption, given a layer thickness in the micron range, is relatively poor. This contribution investigates the effiency improvement of hybrid dye-microcrystalline solar cells compared to pure microcrystalline solar cells by simulation. The results indicate that, under optimal conditions, the effiency can be improved by more than 20 % compared to a pure microcrystalline silicon cell. The thickness reduction for the hybrid system can be as large as 50 % for the same effiency.

  2. Measurement of silicon and GaAs/Ge solar cells ac parameters

    Energy Technology Data Exchange (ETDEWEB)

    Deshmukh, M.P.; Nagaraju, J. [Indian Institute of Science, Bangalore (India). Dept. of Instrumentation

    2005-01-01

    The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell I-V characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature. (author)

  3. Incidence angle and spectral effects on vertical junction silicon solar cell capacitance

    OpenAIRE

    2014-01-01

    The aim of this work is to present a theoretical study of a vertical junction silicon solar cell under monochromatic illumination. By solving the continuity equation and using a one-dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both illumination wavelength and incidence angle on the solar cell capaci...

  4. INVESTIGATION ON SILICON SOLAR CELL CAPACITANCE AND ITS DEPENDENCE ON BOTH TEMPERATURE AND INCIDENCE ANGLE

    OpenAIRE

    2014-01-01

    The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell ca...

  5. Silicon-on-ceramic coating process. Silicon sheet growth development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Silicon Solar Array Project. Quarterly report No. 8, December 28, 1977--March 28, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P.W. Zook, J.D.; Heaps, J D; Maclolek, R B; Koepke, B; Butter, C D; Schult, S B

    1978-04-20

    A research program to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon is described. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 12 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A dip-coating method for putting silicon on ceramic (SOC) has been shown to produce solar-cell-quality sheet silicon. This method and a continuous coating process also being investigated have excellent scale-up potential which offers an outstanding cost-effective way to manufacture large-area solar cells. A variety of ceramic materials have been dip-coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO/sub 2/ best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm/sup 2/ in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Solar cells with areas from 1 to 10 cm/sup 2/ have been fabricated from material withas-grown surface. Recently, an antireflection (AR) coating has been applied to SOC cells. Conversion efficiencies greater than 9% have been achieved without optimizing series resistance characteristics. Such cells typically have open-circuit voltages and short-circuit current densities of 0.51 V and 20 mA/cm/sup 2/, respectively.

  6. Dip-coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

    Science.gov (United States)

    Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Gutter, C. D.; Schuldt, S. B.

    1977-01-01

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.

  7. Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Papet, P.; Nichiporuk, O.; Kaminski, A.; Rozier, Y.; Kraiem, J.; Lelievre, J.-F.; Chaumartin, A.; Fave, A.; Lemiti, M. [Laboratoire de Physique de la Matiere, UMR-CNRS 5511, Institut National des Sciences Appliquees de Lyon, Bat Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2006-09-22

    High-efficiency silicon solar cells need a textured front surface to reduce reflectance and to improve light trapping. Texturing of monocrystalline silicon is usually done in alkaline solutions. These solutions are cheaper, but are pollutants of silicon technologies. In this paper, we investigate an alternative solution containing tetramethyl ammonium hydroxide ((CH{sub 3}){sub 4}NOH, TMAH ). This study shows the influence of different parameters (concentration, agitation, duration and temperature), to obtain uniform and reliable pyramidal texturization on different silicon surfaces (as cut, etched and polished). Under optimized conditions, TMAH-textured surface led to an average weighted reflectance of 13%, without any antireflection coating independent of the initial silicon surface. Unlike potassium hydroxide (KOH) texturing solution, characterization of silicon oxide layer contamination after TMAH texturing process revealed no pollution, and passivation is less affected by TMAH than by KOH texturization. (author)

  8. A study of ZnO:B films for thin film silicon solar cells

    Science.gov (United States)

    Yin, J.; Zhu, H.; Wang, Y.; Wang, Z.; Gao, J.; Mai, Y.; Ma, Y.; Wan, M.; Huang, Y.

    2012-10-01

    Boron doped zinc oxide (ZnO:B) films with different thicknesses were prepared with low pressure chemical vapor deposition (LPCVD) technique and implemented in thin film silicon solar cells as front and back electrodes. It is found that thick back ZnO:B film electrode in thin film silicon solar cells leads to a high fill factors (FF), which is attributed to an improvement of the electrical properties of the thick ZnO:B films, and in the meanwhile a slightly low short circuit currents (Jsc) due to a high light absorption in the thick back ZnO:B films. Differently, the thicker front ZnO:B film electrodes result in a high Jsc but a low FF of solar cells compared to the thinner ones. The low FF of the solar cells may be caused by the local shunt originated from the pinholes or by the cracks (zones of non-dense material) formed in particular in microcrystalline silicon materials deposited on rough front ZnO:B films. As to the high Jsc, it is expected to be due to a good light trapping effect inside solar cells grown on rough front ZnO:B films. Moreover, the application of high reflective polyvinyl butyral (PVB) foils effectively enhances the utilization of incident light in solar cells. By optimizing deposition process of the ZnO:B films, high efficiencies of 8.8% and 10% for single junction thin film amorphous silicon solar cells (a-Si:H, intrinsic layer thickness < 200 nm) and amorphous/microcrystalline silicon tandem solar cells (a-Si:H/μc-Si:H, intrinsic amorphous silicon layer thickness < 220 nm), respectively, are achieved.

  9. A 12%-efficient upgraded metallurgical grade silicon-organic heterojunction solar cell achieved by a self-purifying process.

    Science.gov (United States)

    Zhang, Jie; Song, Tao; Shen, Xinlei; Yu, Xuegong; Lee, Shuit-Tong; Sun, Baoquan

    2014-11-25

    Low-quality silicon such as upgraded metallurgical-grade (UMG) silicon promises to reduce the material requirements for high-performance cost-effective photovoltaics. So far, however, UMG silicon currently exhibits the short diffusion length and serious charge recombination associated with high impurity levels, which hinders the performance of solar cells. Here, we used a metal-assisted chemical etching (MACE) method to partially upgrade the UMG silicon surface. The silicon was etched into a nanostructured one by the MACE process, associated with removing impurities on the surface. Meanwhile, nanostructured forms of UMG silicon can benefit improved light harvesting with thin substrates, which can relax the requirement of material purity for high photovoltaic performance. In order to suppress the large surface recombination due to increased surface area of nanostructured UMG silicon, a post chemical treatment was used to decrease the surface area. A solution-processed conjugated polymer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was deposited on UMG silicon at low temperature (silicon substrate. By optimizing the thickness of silicon and suppressing the charge recombination at the interface between thin UMG silicon/PEDOT:PSS, we are able to achieve 12.0%-efficient organic-inorganic hybrid solar cells, which are higher than analogous UMG silicon devices. We show that the modified UMG silicon surface can increase the minority carrier lifetime because of reduced impurity and surface area. Our results suggest a design rule for an efficient silicon solar cell with low-quality silicon absorbers.

  10. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    Science.gov (United States)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  11. Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial

    Energy Technology Data Exchange (ETDEWEB)

    Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

    2004-11-08

    In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

  12. Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency.

    Science.gov (United States)

    Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega, Pablo; Calle, Eric; Garín, Moises; Alcubilla, Ramon

    2015-07-01

    The nanostructuring of silicon surfaces--known as black silicon--is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at the nanostructured surface. Here, we show that a conformal alumina film can solve the issue of surface recombination in black silicon solar cells by providing excellent chemical and electrical passivation. We demonstrate that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very sensitive to front surface passivation. This means that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production. Furthermore, we show that the use of black silicon can result in a 3% increase in daily energy production when compared with a reference cell with the same efficiency, due to its better angular acceptance.

  13. Hot wire CVD deposition of nanocrystalline silicon solar cells on rough substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongbo B.T., E-mail: h.li@uu.n [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Werf, Karine H.M. van der; Rath, Jatin K.; Schropp, Ruud E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2009-04-30

    In silicon thin film solar cell technology, frequently rough or textured substrates are used to scatter the light and enhance its absorption. The important issue of the influence of substrate roughness on silicon nanocrystal growth has been investigated through a series of nc-Si:H single junction p-i-n solar cells containing i-layers deposited with Hot-wire CVD. It is shown that silicon grown on the surface of an unoptimized rough substrate contains structural defects, which deteriorate solar cell performance. By introducing parameter v, voids/substrate area ratio, we could define a criterion for the morphology of light trapping substrates for thin film silicon solar cells: a preferred substrate should have a v value of less than around 1 x 10{sup -6}, correlated to a substrate surface rms value of lower than around 50 nm. Our Ag/ZnO substrates with rms roughness less than this value typically do not contain microvalleys with opening angles smaller than {approx} 110{sup o}, resulting in solar cells with improved output performance. We suggest a void-formation model based on selective etching of strained Si-Si atoms due to the collision of growing silicon film surface near the valleys of the substrate.

  14. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  15. Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Francesco Dell’Olio

    2016-10-01

    Full Text Available A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.

  16. Significant light absorption enhancement in silicon thin film tandem solar cells with metallic nanoparticles.

    Science.gov (United States)

    Cai, Boyuan; Li, Xiangping; Zhang, Yinan; Jia, Baohua

    2016-05-13

    Enhancing the light absorption in microcrystalline silicon bottom cell of a silicon-based tandem solar cell for photocurrent matching holds the key to achieving the overall solar cell performance breakthroughs. Here, we present a concept for significantly improving the absorption of both subcells simultaneously by simply applying tailored metallic nanoparticles both on the top and at the rear surfaces of the solar cells. Significant light absorption enhancement as large as 56% has been achieved in the bottom subcells. More importantly the thickness of the microcrystalline layer can be reduced by 57% without compromising the optical performance of the tandem solar cell, providing a cost-effective strategy for high performance tandem solar cells.

  17. Silicon solar cells reaching the efficiency limits: from simple to complex modelling

    Science.gov (United States)

    Kowalczewski, Piotr; Redorici, Lisa; Bozzola, Angelo; Andreani, Lucio Claudio

    2016-05-01

    Numerical modelling is pivotal in the development of high efficiency solar cells. In this contribution we present different approaches to model the solar cell performance: the diode equation, a generalization of the well-known Hovel model, and a complete device modelling. In all three approaches we implement a Lambertian light trapping, which is often considered as a benchmark for the optical design of solar cells. We quantify the range of parameters for which all three approaches give the same results, and highlight the advantages and limitations of different models. Using these methods we calculate the efficiency limits of single-junction crystalline silicon solar cells in a wide range of cell thickness. We find that silicon solar cells close to the efficiency limits operate in the high-injection (rather than in the low-injection) regime. In such a regime, surface recombination can have an unexpectedly large effect on cells with the absorber thickness lower than a few tens of microns. Finally, we calculate the limiting efficiency of tandem silicon-perovskite solar cells, and we determine the optimal thickness of the bottom silicon cell for different band gaps of the perovskite material.

  18. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Da; Kunz, Thomas [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Wolf, Nadine [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Energy Efficiency, Am Galgenberg 87, 97074 Wuerzburg (Germany); Liebig, Jan Philipp [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Göken, Mathias [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Brabec, Christoph J. [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Institute of Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen (Germany)

    2015-05-29

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm{sup 2} aperture area on the graphite substrate. The optical properties of the SiN{sub x}/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN{sub x}/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN{sub x}/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance.

  19. Post passivation light trapping back contacts for silicon heterojunction solar cells.

    Science.gov (United States)

    Smeets, M; Bittkau, K; Lentz, F; Richter, A; Ding, K; Carius, R; Rau, U; Paetzold, U W

    2016-11-10

    Light trapping in crystalline silicon (c-Si) solar cells is an essential building block for high efficiency solar cells targeting low material consumption and low costs. In this study, we present the successful implementation of highly efficient light-trapping back contacts, subsequent to the passivation of Si heterojunction solar cells. The back contacts are realized by texturing an amorphous silicon layer with a refractive index close to the one of crystalline silicon at the back side of the silicon wafer. As a result, decoupling of optically active and electrically active layers is introduced. In the long run, the presented concept has the potential to improve light trapping in monolithic Si multijunction solar cells as well as solar cell configurations where texturing of the Si absorber surfaces usually results in a deterioration of the electrical properties. As part of this study, different light-trapping textures were applied to prototype silicon heterojunction solar cells. The best path length enhancement factors, at high passivation quality, were obtained with light-trapping textures based on randomly distributed craters. Comparing a planar reference solar cell with an absorber thickness of 280 μm and additional anti-reflection coating, the short-circuit current density (JSC) improves for a similar solar cell with light-trapping back contact. Due to the light trapping back contact, the JSC is enhanced around 1.8 mA cm(-2) to 38.5 mA cm(-2) due to light trapping in the wavelength range between 1000 nm and 1150 nm.

  20. Laser process for extended silicon thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hessmann, M.T., E-mail: hessmann@zae.uni-erlangen.de [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Kunz, T.; Burkert, I.; Gawehns, N. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Schaefer, L.; Frick, T.; Schmidt, M. [Bayerisches Laserzentrum, Konrad-Zuse-Str 2-6, 91052 Erlangen (Germany); Meidel, B. [Schott Solar AG, Carl-Zeiss-Strasse 4, 63755 Alzenau (Germany); Auer, R. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Brabec, C.J. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Chair VI - Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen (Germany)

    2011-10-31

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  1. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

    Science.gov (United States)

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

  2. Modelling of Random Textured Tandem Silicon Solar Cells Characteristics: Decision Tree Approach

    Directory of Open Access Journals (Sweden)

    R.S. Kamath

    2016-11-01

    Full Text Available We report decision tree (DT modeling of randomly textured tandem silicon solar cells characteristics. The photovoltaic modules of silicon-based solar cells are extremely popular due to their high efficiency and longer lifetime. Decision tree model is one of the most common data mining models can be used for predictive analytics. The reported investigation depicts optimum decision tree architecture achieved by tuning parameters such as Min split, Min bucket, Max depth and Complexity. DT model, thus derived is easy to understand and entails recursive partitioning approach implemented in the “rpart” package. Moreover the performance of the model is evaluated with reference Mean Square Error (MSE estimate of error rate. The modeling of the random textured silicon solar cells reveals strong correlation of efficiency with “Fill factor” and “thickness of a-Si layer”.

  3. Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.

    Science.gov (United States)

    Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra

    2016-07-29

    Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

  4. Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future

    Science.gov (United States)

    Bardhan Roy, Arijit; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Minhaz Hossain, S.; Kundu, Avra

    2016-07-01

    Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

  5. Effect of Subgrains on the Performance of Mono-Like Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Su Zhou

    2013-01-01

    Full Text Available The application of Czochralski (Cz monocrystalline silicon material in solar cells is limited by its high cost and serious light-induced degradation. The use of cast multicrystalline silicon is also hindered by its high dislocation densities and high surface reflectance after texturing. Mono-like crystalline silicon is a promising material because it has the advantages of both mono- and multicrystalline silicon. However, when mono-like wafers are made into cells, the efficiencies of a batch of wafers often fluctuate within a wide range of >1% (absolute. In this work, mono-like wafers are classified by a simple process and fabricated into laser doping selective emitter cells. The effect and mechanism of subgrains on the performance of mono-like crystalline silicon solar cells are studied. The results show that the efficiency of mono-like crystalline silicon solar cells significantly depends on material defects that appear as subgrains on an alkaline textured surface. These subgrains have an almost negligible effect on the optical performance, shunt resistance, and junction recombination but significantly affect the minority carrier diffusion length and quantum efficiency within a long wavelength range. Finally, an average efficiency of 18.2% is achieved on wafers with hardly any subgrain but with a small-grain band.

  6. Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

    Science.gov (United States)

    Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega, Pablo; Calle, Eric; Garín, Moises; Alcubilla, Ramon

    2015-07-01

    The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at the nanostructured surface. Here, we show that a conformal alumina film can solve the issue of surface recombination in black silicon solar cells by providing excellent chemical and electrical passivation. We demonstrate that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very sensitive to front surface passivation. This means that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production. Furthermore, we show that the use of black silicon can result in a 3% increase in daily energy production when compared with a reference cell with the same efficiency, due to its better angular acceptance.

  7. Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

    Science.gov (United States)

    Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

    2017-01-11

    Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n(+)/p junctions and from 7.8% to 8.8% for p(+)/n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

  8. Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Atteq ur Rehman

    2014-02-01

    Full Text Available Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

  9. Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

    Science.gov (United States)

    Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

    2015-09-02

    Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

  10. The automated array assembly task of the low-cost silicon solar array project, phase 2

    Science.gov (United States)

    Coleman, M. G.; Pryor, R. A.; Sparks, T. G.; Legge, R.; Saltzman, D. L.

    1980-01-01

    Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

  11. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    Directory of Open Access Journals (Sweden)

    Jiyoon Nam

    2016-01-01

    Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

  12. Multi-Objective Optimization of Thin-Film Silicon Solar Cells with Metallic and Dielectric Nanoparticles

    Directory of Open Access Journals (Sweden)

    Giovanni Aiello

    2017-01-01

    Full Text Available Thin-film solar cells enable a strong reduction of the amount of silicon needed to produce photovoltaic panels but their efficiency lowers. Placing metallic or dielectric nanoparticles over the silicon substrate increases the light trapping into the panel thanks to the plasmonic scattering from nanoparticles at the surface of the cell. The goal of this paper is to optimize the geometry of a thin-film solar cell with silver and silica nanoparticles in order to improve its efficiency, taking into account the amount of silver. An efficient evolutionary algorithm is applied to perform the optimization with a reduced computing time.

  13. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  14. Design of a plasmonic back reflector for silicon nanowire decorated solar cells.

    Science.gov (United States)

    Ren, Rui; Guo, Yongxin; Zhu, Rihong

    2012-10-15

    This Letter presents a crystalline silicon thin film solar cell model with Si nanowire arrays surface decoration and metallic nanostructure patterns on the back reflector. The nanostructured Ag back reflector can significantly enhance the absorption in the near-infrared spectrum. Furthermore, by inserting a ZnO:Al layer between the silicon substrate and nanostructured Ag back reflector, the absorption loss in the Ag back reflector can be clearly depressed, contributing to a maximum J(sc) of 28.4 mA/cm(2). A photocurrent enhancement of 22% is achieved compared with a SiNW solar cell with a planar Ag back reflector.

  15. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  16. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    Science.gov (United States)

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization.

  17. Determination of a definition of solar grade silicon. Final report, October 1975--September 1976

    Energy Technology Data Exchange (ETDEWEB)

    Christ, M.H.; Gupta, K.P.; Gutsche, H.W.; Hill, D.E.; Tucker, W.F.; Wang, M.S.

    1976-01-01

    The results are given of work on the effects of the impurities Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr on the performance of silicon solar cells. A series of experimental silicon crystals were prepared containing controlled amounts of these impurities in otherwise semiconductor-grade silicon single crystals. Using these crystals, solar cells were prepared and the solar energy conversion efficiencies of these devices were measured against a standard cell. As expected, cell efficiency was found to be degraded in various degrees by most of the impurities under investigation. Surprisingly, degradation of efficiency was most severe in the presence of titanium and vanadium. For a greater than or equal to 10% device the concentration of Ti must be kept below approximately 6 x 10/sup 13/ atoms/cm/sup 3/ and that of V below approximately 1.2 10/sup 14/ atoms/cm/sup 3/. On the other hand, silicon solar cell material may contain as much as 10/sup 17/ atoms/cm/sup 3/ of aluminum or carbon, 10/sup 16/ atoms/cm/sup 3/ of nickel, but only about 10/sup 15/ atoms/cm/sup 3/ of manganese, chromium, iron, copper, zirconium, and magnesium to yield a solar device of acceptable performance.

  18. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Science.gov (United States)

    Pathi, Prathap; Peer, Akshit; Biswas, Rana

    2017-01-01

    Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

  19. Foaming of aluminium-silicon alloy using concentrated solar energy

    Energy Technology Data Exchange (ETDEWEB)

    Cambronero, L.E.G.; Ruiz-Roman, J.M. [Grupo de Materiales Hibridos, ETSIM-UPM, Madrid, Rios Rosas 21, 28003 Madrid (Spain); Canadas, I.; Martinez, D. [Plataforma Solar de Almeria, CIEMAT, P.O. Box 22, 04200 Tabernas (Almeria) (Spain)

    2010-06-15

    Solar energy is used for the work reported here as a nonconventional heating system to produce aluminium foam from Al-Si alloy precursors produced by powder metallurgy. A commercial precursor in cylindrical bars enclosed in a stainless-steel mould was heated under concentrated solar radiation in a solar furnace with varied heating conditions (heating rate, time, and temperature). Concentrated solar energy close to 300 W/cm{sup 2} on the mould is high enough to achieve complete foaming after heating for only 200 s. Under these conditions, the density and pore distribution in the foam change depending on the solar heating parameters and mould design. (author)

  20. Optimization of the emitter region and the metal grid of a concentrator silicon solar cell

    Institute of Scientific and Technical Information of China (English)

    Xing Yupeng; Han Peide; Fan Yujie; Wang Shuai; Liang Peng; Ye Zhou; Hu Shaoxu

    2013-01-01

    The optimizations of the emitter region and the metal grid of a concentrator silicon solar cell are illustrated.The optimizations are done under 1 sun,100 suns and 200 suns using the 2D numerical simulation tool TCAD software.The optimum finger spacing and its range decrease with the increase in sheet resistance and concentration ratio.The processes of the diffusion and oxidization in the manufacture flow of the silicon solar cells were simulated to get a series of typical emitter dopant profiles to optimize.The efficiency of the solar cell under 100 suns and 200 suns increased with the decrease in diffusion temperature and the increase in oxidation temperature and time when the diffusion temperature is lower than or equal to 865 ℃.The effect of sheet resistance of the emitter on series resistance and the conversion efficiency of the solar cell under concentration was discussed.

  1. Angle resolved characterization of nanostructured and conventionally textured silicon solar cells

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Ormstrup, Jeppe; Ommen, Martin Lind;

    2015-01-01

    We report angle resolved characterization of nanostructured and conventionally textured silicon solar cells. The nanostructured solar cells are realized through a single step, mask-less, scalable reactive ion etching (RIE) texturing of the surface. Photovoltaic properties including short circuit...... current, open circuit voltage, fill factor (FF) and power conversion efficiency are each measured as function of the relative incident angle between the solar cell and the light source. The relative incident angle is varied from 0° to 90° in steps of 10° in orthogonal axes, such that each solar cell...... is characterized at 100 different angle combinations. The angle resolved photovoltaic properties are summarized in terms of the average, angle-dependent electrical power output normalized to the power output at normal incidence and differently textured cells on different silicon substrates are compared in terms...

  2. One step lithography-less silicon nanomanufacturing for low cost high-efficiency solar cell production

    Science.gov (United States)

    Chen, Yi; Liu, Logan

    2014-03-01

    To improve light absorption, previously various antireflection material layers were created on solar wafer surface including multilayer dielectric film, nanoparticle sludges, microtextures, noble metal plasmonic nanoparticles and 3D silicon nanostructure arrays. All of these approaches involve nanoscale prepatterning, surface-area-sensitive assembly processes or extreme fabrication conditions; therefore, they are often limited by the associated high cost and low yield as well as the consequent industry incompatibility. In comparison, our nanomanufacturing, an unique synchronized and simultaneous top-down and bottom-up nanofabrication approach called simultaneous plasma enhanced reactive ion synthesis and etching (SPERISE), offers a better antireflection solution along with the potential to increase p-n junction surface area. High density and high aspect ratio anechoic nanocone arrays are repeatedly and reliably created on the entire surface of single and poly crystalline silicon wafers as well as amorphous silicon thin films within 5 minutes under room temperature. The nanocone surface had lower than 5% reflection over the entire solar spectrum and a desirable omnidirectional absorption property. Using the nanotextured solar wafer, a 156mm × 156mm 18.1%-efficient black silicon solar cell was fabricated, which was an 18.3% enhancement over the cell fabricated by standard industrial processes. This process also reduces silicon loss during the texturing step and enables tighter process control by creating more uniform surface structures. Considering all the above advantages, the demonstrated nanomanufacturing process can be readily translated into current industrial silicon solar cell fabrication lines to replace the costly and ineffective wet chemical texturing and antireflective coatings.

  3. Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trapping.

    Science.gov (United States)

    Gaucher, Alexandre; Cattoni, Andrea; Dupuis, Christophe; Chen, Wanghua; Cariou, Romain; Foldyna, Martin; Lalouat, Loı̈c; Drouard, Emmanuel; Seassal, Christian; Roca I Cabarrocas, Pere; Collin, Stéphane

    2016-09-14

    Ultrathin c-Si solar cells have the potential to drastically reduce costs by saving raw material while maintaining good efficiencies thanks to the excellent quality of monocrystalline silicon. However, efficient light trapping strategies must be implemented to achieve high short-circuit currents. We report on the fabrication of both planar and patterned ultrathin c-Si solar cells on glass using low temperature (T optimization are discussed.

  4. Analysis of the inner collection efficiency in hybrid silicon solar cells

    OpenAIRE

    Nubile, P.; Torres, P; Hof, Ch.; Fischer, D.

    2008-01-01

    The collection of photogenerated carriers in hybrid silicon solar cells structures were determined by the DICE (dynamic inner collection efficiency) technique. The hybrid solar cells have a microcrystalline n-type emitter and a crystalline p-type base. Cells with amorphous buffers of several thickness and p+ back surface field microcrystalline layers were also studied. Spectral response and reflectivity were measured for each sample in order to obtain the internal spectral response or quantum...

  5. The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells

    Science.gov (United States)

    Pryor, R. A.

    1980-01-01

    Three inch diameter Czochralski silicon substrates sliced directly to 5 mil, 8 mil, and 27 mil thicknesses with wire saw techniques were procured. Processing sequences incorporating either diffusion or ion implantation technologies were employed to produce n+p or n+pp+ solar cell structures. These cells were evaluated for performance, ease of fabrication, and cost effectiveness. It was determined that the use of 7 mil or even 4 mil wafers would provide near term cost reductions for solar cell manufacturers.

  6. Improving Efficiency of Multicrystalline Silicon and CIGS Solar Cells by Incorporating Metal Nanoparticles

    OpenAIRE

    Ming-Jer Jeng; Zih-Yang Chen; Yu-Ling Xiao; Liann-Be Chang; Jianping Ao; Yun Sun; Ewa Popko; Witold Jacak; Lee Chow

    2015-01-01

    This work studies the use of gold (Au) and silver (Ag) nanoparticles in multicrystalline silicon (mc-Si) and copper-indium-gallium-diselenide (CIGS) solar cells. Au and Ag nanoparticles are deposited by spin-coating method, which is a simple and low cost process. The random distribution of nanoparticles by spin coating broadens the resonance wavelength of the transmittance. This broadening favors solar cell applications. Metal shadowing competes with light scattering in a manner that varies w...

  7. Tandem solar cells made from amorphous silicon and polymer bulk heterojunction sub-cells.

    Science.gov (United States)

    Park, Sung Heum; Shin, Insoo; Kim, Kwang Ho; Street, Robert; Roy, Anshuman; Heeger, Alan J

    2015-01-14

    A tandem solar cell based on a combination of an amorphous silicon (a-Si) and polymer solar cell (PSC) is demonstrated. As these tandem devices can be readily fabricated by low-cost methods, they require only a minor increase in the total manufacturing cost. Therefore, a combination of a-Si and PSC provides a compelling solution to reduce the cost of electricity produced by photovoltaics.

  8. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Science.gov (United States)

    Tune, Daniel D.; Shapter, Joseph G.

    2013-01-01

    The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs) on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  9. Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

    OpenAIRE

    Paviet-Salomon, Bertrand; Tomasi, Andrea; Descoeudres, Antoine; Barraud, Loris; Nicolay, Sylvain; Despeisse, Matthieu; De Wolf, Stefaan; Ballif, Christophe

    2015-01-01

    We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. These include reflection and escape-light losses, as well as parasitic absorption in the front passivation layers and rear contact stacks. We then provide practical guidelines to mitigate such reflection and parasitic absorption losses at t...

  10. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    Science.gov (United States)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  11. Surface passivation of efficient nanotextured black silicon solar cells using thermal atomic layer deposition.

    Science.gov (United States)

    Wang, Wei-Cheng; Lin, Che-Wei; Chen, Hsin-Jui; Chang, Che-Wei; Huang, Jhih-Jie; Yang, Ming-Jui; Tjahjono, Budi; Huang, Jian-Jia; Hsu, Wen-Ching; Chen, Miin-Jang

    2013-10-09

    Efficient nanotextured black silicon solar cells passivated by an Al2O3 layer are demonstrated. The broadband antireflection of the nanotextured black silicon solar cells was provided by fabricating vertically aligned silicon nanowire (SiNW) arrays on the n(+) emitter. A highly conformal Al2O3 layer was deposited upon the SiNW arrays by the thermal atomic layer deposition (ALD) based on the multiple pulses scheme. The nanotextured black silicon wafer covered with the Al2O3 layer exhibited a low total reflectance of ∼1.5% in a broad spectrum from 400 to 800 nm. The Al2O3 passivation layer also contributes to the suppressed surface recombination, which was explored in terms of the chemical and field-effect passivation effects. An 8% increment of short-circuit current density and 10.3% enhancement of efficiency were achieved due to the ALD Al2O3 surface passivation and forming gas annealing. A high efficiency up to 18.2% was realized in the ALD Al2O3-passivated nanotextured black silicon solar cells.

  12. A study of ZnO:B films for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yin, J.; Zhu, H.; Wang, Y.; Wang, Z.; Gao, J.; Mai, Y.; Ma, Y. [Baoding Tianwei Solarfilms Co., Ltd., 071051, Baoding (China); Wan, M. [Department of Chemistry and Material science, Hunan Institute of Humanities, Science and Technology, 417000, Loudi (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., 071051, Baoding (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer ZnO:B films with different thicknesses were prepared with LPCVD technique. Black-Right-Pointing-Pointer The thicker ZnO:B back electrodes lead to higher FF but slightly lower J{sub sc.} Black-Right-Pointing-Pointer Back polyvinyl butyral (PVB) foils improves the utilization of incident light in solar cells. Black-Right-Pointing-Pointer The thicker ZnO:B front electrode films result in high J{sub sc} but lower FF. - Abstract: Boron doped zinc oxide (ZnO:B) films with different thicknesses were prepared with low pressure chemical vapor deposition (LPCVD) technique and implemented in thin film silicon solar cells as front and back electrodes. It is found that thick back ZnO:B film electrode in thin film silicon solar cells leads to a high fill factors (FF), which is attributed to an improvement of the electrical properties of the thick ZnO:B films, and in the meanwhile a slightly low short circuit currents (J{sub sc}) due to a high light absorption in the thick back ZnO:B films. Differently, the thicker front ZnO:B film electrodes result in a high J{sub sc} but a low FF of solar cells compared to the thinner ones. The low FF of the solar cells may be caused by the local shunt originated from the pinholes or by the cracks (zones of non-dense material) formed in particular in microcrystalline silicon materials deposited on rough front ZnO:B films. As to the high J{sub sc}, it is expected to be due to a good light trapping effect inside solar cells grown on rough front ZnO:B films. Moreover, the application of high reflective polyvinyl butyral (PVB) foils effectively enhances the utilization of incident light in solar cells. By optimizing deposition process of the ZnO:B films, high efficiencies of 8.8% and 10% for single junction thin film amorphous silicon solar cells (a-Si:H, intrinsic layer thickness < 200 nm) and amorphous/microcrystalline silicon tandem solar cells (a-Si:H/{mu}c-Si:H, intrinsic amorphous silicon layer

  13. Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

    KAUST Repository

    Nogay, Gizem

    2016-09-26

    Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF. Importantly, our cell parameter analysis, performed in a temperature range from -100 to +80 °C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FF s in the range of 70% at -100 °C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at -100 °C using doped nanocrystalline layers, compared with saturation onset at -60 °C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation. © 2011-2012 IEEE.

  14. Solar photovoltaic research and development program of the Air Force Aero Propulsion Laboratory. [silicon solar cell applicable to satellite power systems

    Science.gov (United States)

    Wise, J.

    1979-01-01

    Progress is reported in the following areas: laser weapon effects, solar silicon solar cell concepts, and high voltage hardened, high power system technology. Emphasis is placed on solar cells with increased energy conversion efficiency and radiation resistance characteristics for application to satellite power systems.

  15. Optimization of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Meijun; Das, Ujjwal; Bowden, Stuart; Hegedus, Steven; Birmire, Robert

    2009-06-09

    In this paper, two-dimensional (2D) simulation of interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells is presented using Sentaurus Device, a software package of Synopsys TCAD. A model is established incorporating a distribution of trap states of amorphous-silicon material and thermionic emission across the amorphous-silicon / crystalline-silicon heterointerface. The 2D nature of IBC-SHJ device is evaluated and current density-voltage (J-V) curves are generated. Optimization of IBC-SHJ solar cells is then discussed through simulation. It is shown that the open circuit voltage (VOC) and short circuit current density (JSC) of IBC-SHJ solar cells increase with decreasing front surface recombination velocity. The JSC improves further with the increase of relative coverage of p-type emitter contacts, which is explained by the simulated and measured position dependent laser beam induced current (LBIC) line scan. The S-shaped J-V curves with low fill factor (FF) observed in experiments are also simulated, and three methods to improve FF by modifying the intrinsic a-Si buffer layer are suggested: (i) decreased thickness, (ii) increased conductivity, and (iii) reduced band gap. With all these optimizations, an efficiency of 26% for IBC-SHJ solar cells is potentially achievable.

  16. Designing optimized nano textures for thin-film silicon solar cells

    NARCIS (Netherlands)

    Jäger, K.; Fischer, M.; Van Swaaij, R.A.C.M.M.; Zeman, M.

    2013-01-01

    Thin-film silicon solar cells (TFSSC), which can be manufactured from abundant materials solely, contain nano-textured interfaces that scatter the incident light. We present an approximate very fast algorithm that allows optimizing the surface morphology of two-dimensional nano-textured interfaces.

  17. Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

    NARCIS (Netherlands)

    Kind, R.; Van Swaaij, R.A.C.M.M.; Rubinelli, F.A.; Solntsev, S.; Zeman, M.

    2011-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate

  18. Photoselective Metal Deposition on Amorphous Silicon p-i-n Solar Cells

    NARCIS (Netherlands)

    Kooij, E.S.; Hamoumi, M.; Kelly, J.J.; Schropp, R.E.I.

    1997-01-01

    A novel method is described for the patternwise metallization of amorphous silicon solar cells, based on photocathodic deposition. The electric field of the p-i-n structure is used for the separation of photogenerated charge carriers. The electrons are driven to the interface of the n+-layer with th

  19. Hydrogenated Silicon Layers and Solar Cells Deposited at Very Low Substrate Temperature

    NARCIS (Netherlands)

    Bronsveld, P.C.P.

    2013-01-01

    For direct production of solar cells on cheap plastics, the quality of VHF-PECVD deposited intrinsic and doped silicon layers made at substrate temperatures ≤ 100 °C was optimized. The investigation showed that at lower substrate temperatures, higher hydrogen dilution of the source gas silane was re

  20. Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

    Science.gov (United States)

    Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

    2017-02-28

    Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p(+)-Si/p-Si/n(+)-Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n(+)-Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

  1. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

    Science.gov (United States)

    Gee, James M; Schmit, Russell R.

    2007-01-30

    Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

  2. Voltage-controlling mechanisms in low-resistivity silicon solar cells - A unified approach

    Science.gov (United States)

    Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

    1986-01-01

    An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of high-voltage low-resistivity silicon solar cells. One of the surprising findings is the suggestion that the magnitude of the minority-carrier mobility may be process-dependent.

  3. Amorphous silicon solar cells on natively textured ZnO grown by PECVD

    NARCIS (Netherlands)

    Löffler, J.; Groenen, R.; Linden, J.L.; Sanden, M.C.M. van de; Schropp, R.E.I.

    2001-01-01

    Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to refer

  4. Systematic process development towards high performance transferred thin silicon solar cells based on epitaxially grown absorbers

    Science.gov (United States)

    Murcia Salazar, Clara Paola

    The value of thin crystalline silicon (c-Si) solar cells is the potential for higher performance compared to conventional wafer approaches. Thin silicon solar cells can outperform thick cells with the same material properties because the smaller active volume causes a reduced bulk recombination leading to higher voltages while efficient light trapping structures ensure all photons are absorbed. Efficiencies above 20+% can be achieved with less than 20um of c-Si with current silicon solar cell processing technologies. In a thin solar cell, factors that will lead to high efficiency include high minority carrier lifetime, low surface recombination, and good optical confinement. Independently optimizing surface optical and electrical properties in a thin solar cell can achieve this higher performance. In addition, re-utilizing a c-Si wafer with a process that allows optimization of both surfaces is a path to higher performance at lower cost. The challenge in the fabrication of this high performance concept is to separately analyze critical parameters through fabrication and transfer and establish the design rules for high performance. This work contributes to the design and systematic fabrication approach of a 20 mum thick epitaxial silicon solar cell. State-of-the-art thin absorbers of less than 30um have reported 655mV (on a textured front surface with antireflection coating), and efficiencies near 17%. We report near 640mV (on a planar front surface with antireflection coating) for 20 mum thick absorbers. It is found that previously reported efficiencies are tightly related to solar cell's active thickness. In the case of transferred solar cells, the thinnest epitaxial transferred cell reported is near 24 mum thick with an efficiency of 15.4% (transparent front handle, textured with ARC and metallic back reflector). Recently, a c-Si transferred solar cell of 43 mum has reported 19.1% efficiency (with a front texture and ARC with localized back contact and reflector

  5. Improvement of silicon nanowire solar cells made by metal catalyzed electroless etching and nano imprint lithography

    Science.gov (United States)

    Chen, Junyi; Subramani, Thiyagu; Jevasuwan, Wipakorn; Fukata, Naoki

    2017-04-01

    Silicon nanowires were fabricated by metal catalyzed electroless etching (MCEE) and nano imprint lithography (NIL), then a shell p-type layer was grown by thermal chemical vapor deposition (CVD) techniques. To reduce back surface recombination and also to activate the dopant, we used two techniques, back surface field (BSF) treatment and rapid thermal annealing (RTA), to improve device performance. In this study, we investigated BSF and RTA treatments in silicon nanowire solar cells, and improved the device performance and efficiency from 4.1 to 7.4% (MCEE device) and from 1.1 to 6.6% (NIL device) after introducing BSF and RTA treatments. Moreover, to achieve better metal contact without sacrificing the reflectance after the shell formation, the selective-area etching method was investigated. Finally, after combining all processes, silicon nanowire solar cells fabricated via the MCEE process exhibited 8.7% efficiency.

  6. Probing Photocurrent Nonuniformities in the Subcells of Monolithic Perovskite/Silicon Tandem Solar Cells.

    Science.gov (United States)

    Song, Zhaoning; Werner, Jérémie; Shrestha, Niraj; Sahli, Florent; De Wolf, Stefaan; Niesen, Björn; Watthage, Suneth C; Phillips, Adam B; Ballif, Christophe; Ellingson, Randy J; Heben, Michael J

    2016-12-15

    Perovskite/silicon tandem solar cells with high power conversion efficiencies have the potential to become a commercially viable photovoltaic option in the near future. However, device design and optimization is challenging because conventional characterization methods do not give clear feedback on the localized chemical and physical factors that limit performance within individual subcells, especially when stability and degradation is a concern. In this study, we use light beam induced current (LBIC) to probe photocurrent collection nonuniformities in the individual subcells of perovskite/silicon tandems. The choices of lasers and light biasing conditions allow efficiency-limiting effects relating to processing defects, optical interference within the individual cells, and the evolution of water-induced device degradation to be spatially resolved. The results reveal several types of microscopic defects and demonstrate that eliminating these and managing the optical properties within the multilayer structures will be important for future optimization of perovskite/silicon tandem solar cells.

  7. Recent developments in low cost silicon solar cells for terrestrial applications. [sheet production methods

    Science.gov (United States)

    Leipold, M. H.

    1978-01-01

    A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

  8. Probing Photocurrent Nonuniformities in the Subcells of Monolithic Perovskite/Silicon Tandem Solar Cells

    KAUST Repository

    Song, Zhaoning

    2016-11-23

    Perovskite/silicon tandem solar cells with high power conversion efficiencies have the potential to become a commercially viable photovoltaic option in the near future. However, device design and optimization is challenging because conventional characterization methods do not give clear feedback on the localized chemical and physical factors that limit performance within individual subcells, especially when stability and degradation is a concern. In this study, we use light beam induced current (LBIC) to probe photocurrent collection nonuniformities in the individual subcells of perovskite/silicon tandems. The choices of lasers and light biasing conditions allow efficiency-limiting effects relating to processing defects, optical interference within the individual cells, and the evolution of water-induced device degradation to be spatially resolved. The results reveal several types of microscopic defects and demonstrate that eliminating these and managing the optical properties within the multilayer structures will be important for future optimization of perovskite/silicon tandem solar cells.

  9. International round-robin inter-comparison of dye-sensitized and crystalline silicon solar cells

    Science.gov (United States)

    Chen, Chia-Yuan; Ahn, Seung Kyu; Aoki, Dasiuke; Kokubo, Junichi; Yoon, Kyung Hoon; Saito, Hidenori; Lee, Kyung Sik; Magaino, Shinichi; Takagi, Katsuhiko; Lin, Ling-Chuan; Lee, Kun-Mu; Wu, Chun-Guey; Zhou, Hong; Igari, Sanekazu

    2017-02-01

    An international round-robin inter-comparison of the spectral responsivity (SR) and current-voltage (I-V) characteristics for dye-sensitized solar cells (DSCs) and crystalline silicon solar cells is reported for the first time. The crystalline silicon cells with various spectral responsivities were also calibrated by AIST to validate this round-robin activity. On the basis of the remarkable consistency in Pmax (within ±1.4% among participants) and Isc (within ±1.2% compared to the primary calibration of AIST) of the silicon specimens, the discrepancy in the SR and photovoltaic parameters of five DSCs among three national laboratories can be verified and diagnosed. Recommendations about sample packages, SR and I-V measurement methods as well as the inter-comparison protocol for improving the performance characterization of the mesoscopic DSCs are presented according to the consolidated data and the experience of the participants.

  10. The solar silicon abundance based on 3D non-LTE calculations

    Science.gov (United States)

    Amarsi, A. M.; Asplund, M.

    2017-01-01

    We present 3D non-local thermodynamic equilibrium (non-LTE) radiative transfer calculations for silicon in the solar photosphere, using an extensive model atom that includes recent, realistic neutral hydrogen collisional cross-sections. We find that photon losses in the Si I lines give rise to slightly negative non-LTE abundance corrections of the order of -0.01 dex. We infer a 3D non-LTE-based solar silicon abundance of lg ɛ_{Si{⊙}}=7.51 dex. With silicon commonly chosen to be the anchor between the photospheric and meteoritic abundances, we find that the meteoritic abundance scale remains unchanged compared with the Asplund et al. and Lodders et al. results.

  11. Phase 2 of the array automated assembly task for the low cost silicon solar array project

    Science.gov (United States)

    Petersen, R. C.

    1980-01-01

    Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work was directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The process was found to be extremely lengthy and cumbersome, and was also found to produce a product virtually identical to that produced by single step electroless nickel plating, as shown by adhesion tests and electrical characteristics of cells under illumination.

  12. Forming openings to semiconductor layers of silicon solar cells by inkjet printing

    Energy Technology Data Exchange (ETDEWEB)

    Lennon, Alison J.; Utama, Roland Y.; Lenio, Martha A.T.; Ho-Baillie, Anita W.Y.; Kuepper, Nicole B.; Wenham, Stuart R. [The University of New South Wales, ARC Photovoltaics Centre of Excellence, Sydney 2052 (Australia)

    2008-11-15

    An inkjet printing method for forming openings to buried semiconductor layers of silicon solar cells is described. The method uses an overlying resist as a sacrificial layer onto which a plasticiser for the resist polymer is deposited in a programmed pattern using inkjet printing. At the locations where the plasticiser is printed, the resist becomes permeable to aqueous etching solutions, enabling openings to be created in underlying dielectric or silicon layer(s). The formed openings can be used to create metal contacts to the buried silicon layers of the solar cell. The permeability of the resist to aqueous etchants can be reversed, thus enabling a single resist layer to be used to create more than one set of openings in the underlying layers. The proposed method may also be applied more generally to the formation of patterns of openings in layers of semiconductor or microelectromechanical devices. (author)

  13. The solar silicon abundance based on 3D non-LTE calculations

    CERN Document Server

    Amarsi, A M

    2016-01-01

    We present three-dimensional (3D) non-local thermodynamic equilibrium (non-LTE) radiative transfer calculations for silicon in the solar photosphere, using an extensive model atom that includes recent, realistic neutral hydrogen collisional cross-sections. We find that photon losses in the SiI lines give rise to slightly negative non-LTE abundance corrections of the order -0.01 dex. We infer a 3D non-LTE based solar silicon abundance of 7.51 dex. With silicon commonly chosen to be the anchor between the photospheric and meteoritic abundances, we find that the meteoritic abundance scale remains unchanged compared with the Asplund et al. (2009) and Lodders et al. (2009) results.

  14. Evaluation of transition metal oxide as carrier-selective contacts for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ding, L. [Arizona State Univ., Tempe, AZ (United States); Boccard, Matthieu [Arizona State Univ., Tempe, AZ (United States); Holman, Zachary [Arizona State Univ., Tempe, AZ (United States); Bertoni, M. [Arizona State Univ., Tempe, AZ (United States)

    2015-04-06

    "Reducing light absorption in the non-active solar cell layers, while enabling the extraction of the photogenerated minority carriers at quasi-Fermi levels are two key factors to improve current generation and voltage, and therefore efficiency of silicon heterojunction solar devices. To address these two critical aspects, transition metal oxide materials have been proposed as alternative to the n- and p-type amorphous silicon used as electron and hole selective contacts, respectively. Indeed, transition metal oxides such as molybdenum oxide, titanium oxide, nickel oxide or tungsten oxide combine a wide band gap typically over 3 eV with a band structure and theoretical band alignment with silicon that results in high transparency to the solar spectrum and in selectivity for the transport of only one carrier type. Improving carrier extraction or injection using transition metal oxide has been a topic of investigation in the field of organic solar cells and organic LEDs; from these pioneering works a lot of knowledge has been gained on materials properties, ways to control these during synthesis and deposition, and their impact on device performance. Recently, the transfer of some of this knowledge to silicon solar cells and the successful application of some metal oxide to contact heterojunction devices have gained much attention. In this contribution, we investigate the suitability of various transition metal oxide films (molybdenum oxide, titanium oxide, and tungsten oxide) deposited either by thermal evaporation or sputtering as transparent hole or electron selective transport layer for silicon solar cells. In addition to systematically characterize their optical and structural properties, we use photoemission spectroscopy to relate compound stoichiometry to band structure and characterize band alignment to silicon. The direct silicon/metal oxide interface is further analyzed by quasi-steady state photoconductance decay method to assess the quality of surface

  15. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Sungho, E-mail: shwoo@dgist.ac.kr [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Hoon Jeong, Jae [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Soo Han, Yoon [Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongbuk 712-702 (Korea, Republic of); Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  16. Properties of Neutron Doped Multicrystalline Silicon for Solar Cells

    Science.gov (United States)

    Pochrybniak, C.; Pytel, K.; Milczarek, J. J.; Jaroszewicz, J.; Lipiński, M.; Piotrowski, T.; Kansy, J.

    2008-04-01

    The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.

  17. Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

    Science.gov (United States)

    Weinberg, I.; Hsu, L. C.

    1977-01-01

    Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

  18. Thin metal layer as transparent electrode in n-i-p amorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Theuring Martin

    2014-07-01

    Full Text Available In this paper, transparent electrodes, based on a thin silver film and a capping layer, are investigated. Low deposition temperature, flexibility and low material costs are the advantages of this type of electrode. Their applicability in structured n-i-p amorphous silicon solar cells is demonstrated in simulation and experiment. The influence of the individual layer thicknesses on the solar cell performance is discussed and approaches for further improvements are given. For the silver film/capping layer electrode, a higher solar cell efficiency could be achieved compared to a reference ZnO:Al front contact.

  19. Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells

    Institute of Scientific and Technical Information of China (English)

    SUN Haizhi; LIU Caichi; HAO Qiuyan; WANG Lijian

    2006-01-01

    The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optical microscope, spectrumresponse and solar cell efficiency test. The minority carrier lifetime and performance of solar cell reduced depend on oxygen precipitates. A few of oxygen precipitates have formed after single-step annealing; and they do not impact the efficiency dramatically. Pre-annealing at 650 ℃ for 4 h enhances the oxygen precipitation when it is subjected to middle temperature annealing. The solar cells performance decayed sharply. Especially annealing at 950 ℃ for 3 h, the V os and I sc of cells decrease 12% and 25% respectively. Few oxygen precipitates have formed in silicon after high temperature annealing at about 1050 ℃ whether pre-annealing is used or not, and the performance of cells is notbe affected.

  20. Calculated and Experimental Research of Sheet Resistances of Laser-Doped Silicon Solar Cells

    Science.gov (United States)

    Li, Tao; Wang, Wen-Jing

    2015-02-01

    The calculated and experimental research of sheet resistances of crystalline silicon solar cells by dry laser doping is investigated. The nonlinear numerical model on laser melting of crystalline silicon and liquid-phase diffusion of phosphorus atoms by dry laser doping is analyzed by the finite difference method implemented in MATLAB. The melting period and melting depth of crystalline silicon as a function of laser energy density is achieved. The effective liquid-phase diffusion of phosphorus atoms in melting silicon by dry laser doping is confirmed by the rapid decrease of sheet resistances in experimental measurement. The plateau of sheet resistances is reached at around 15Ω/□. The calculated sheet resistances as a function of laser energy density is obtained and the calculated results are in good agreement with the corresponding experimental measurement. Due to the successful verification by comparison between experimental measurement and calculated results, the simulation results could be used to optimize the virtual laser doping parameters.

  1. MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, W.A.

    1980-12-01

    The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

  2. Hydrogen passivation of electrically active defects in crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Milstein, J B; Tsuo, Y S; Osterwald, C R; White, C W

    1984-06-01

    We have observed significant improvements in the efficiencies of dendritic web and edge-supported-pulling (ESP) silicon sheet solar cells after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. We have determined that the silicon sputter rate for a constant ion beam flux of 0.60 +- 0.05 mA/cm/sup 2/ exhibits a maximum at approximately 1400 eV ion beam energy. We have observed that hydrogen ion beam treatment can result in a reduced fill factor, which is caused by damage to the front metallization of the cell rather than by damage to the p-n junction.

  3. Fatigue degradation and electric recovery in Silicon solar cells embedded in photovoltaic modules.

    Science.gov (United States)

    Paggi, Marco; Berardone, Irene; Infuso, Andrea; Corrado, Mauro

    2014-03-28

    Cracking in Silicon solar cells is an important factor for the electrical power-loss of photovoltaic modules. Simple geometrical criteria identifying the amount of inactive cell areas depending on the position of cracks with respect to the main electric conductors have been proposed in the literature to predict worst case scenarios. Here we present an experimental study based on the electroluminescence (EL) technique showing that crack propagation in monocrystalline Silicon cells embedded in photovoltaic (PV) modules is a much more complex phenomenon. In spite of the very brittle nature of Silicon, due to the action of the encapsulating polymer and residual thermo-elastic stresses, cracked regions can recover the electric conductivity during mechanical unloading due to crack closure. During cyclic bending, fatigue degradation is reported. This pinpoints the importance of reducing cyclic stresses caused by vibrations due to transportation and use, in order to limit the effect of cracking in Silicon cells.

  4. Photostability Assessment in Amorphous-Silicon Solar Cells; Determinacion de la Fotoestabilidad en Celulas Solares de Silicio Amorfo

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M. [Ciemat, Madrid (Spain)

    2000-07-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled-photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characteristics in well established conditions. This method is suitable for a kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs.

  5. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    Science.gov (United States)

    John, J.; Prajapati, V.; Vermang, B.; Lorenz, A.; Allebe, C.; Rothschild, A.; Tous, L.; Uruena, A.; Baert, K.; Poortmans, J.

    2012-08-01

    Bulk crystalline Silicon solar cells are covering more than 85% of the world's roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90's and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  6. One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution

    Institute of Scientific and Technical Information of China (English)

    Ye-hua Tang; Chun-lan Zhou; Su Zhou; Yan Zhao; Wen-jing Wang; Jian-ming Fei; Hong-bin Cao

    2013-01-01

    Currently,a conventional two-step method has been used to generate black silicon (BS)surfaces on silicon substrates for solar cell manufacturing.However,the performances of the solar cell made with such surface generation method are poor,because of the high surface recombination caused by deep etching in the conventional surface generation method for BS.In this work,a modified wet chemical etching solution with additives was developed.A zhomogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature.The BS layer had low reflectivity and shallow etching depth.The additive in the etch solution performs the function of pH-modulation.After 16-min etching,the etching depth in the samples was approximately 200 nm,and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%,BS solar cells were fabricated in the production line.The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination.An efficiency of 15,63% for the modified etching BS solar cells was achieved on a large area,ptype single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88%fill factor.

  7. Material effects in manufacturing of silicon based solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Schieferdecker, Anja; Sachse, Jens-Uwe; Mueller, Torsten; Seidel, Ulf; Bartholomaeus, Lars; Germershausen, Sven; Perras, Reinhold; Meissner, Rita; Hoebbel, Helmut; Schenke, Andreas; Bhatti, A.K.; Kuesters, Karl Heinz [Conergy Solar Module GmbH and Co. KG, Conergy Str. 8, 15236 Frankfurt/Oder (Germany); Richter, Hans [IHP, Im Technologiepark 25, 15236 Frankfurt/Oder (Germany); GFWW, Im Technologiepark 1, 15236 Frankfurt/Oder (Germany)

    2011-03-15

    The performance and efficiency of solar cells depends strongly on influence of materials. Key topics for solar cell optimisation are presently silicon material properties and materials for cell metallisation. Optimisation of silicon is focussed e.g. on material properties such as impurity content, density of dislocation and grain boundaries in multi-crystalline silicon which influence parameters like carrier lifetime, and therefore the cell efficiency. Improved characterisation methods of solar cells like electroluminescence and photoluminescence are combined with techniques such as thermography and LBIC to improve production process and materials. As a result cell efficiency will be increased. Optimisation of cell metallisation and module interconnects is strongly related to progress in paste materials for front side metallisation. Improved materials enable the use of higher emitter resistance and the printing of smaller metal lines, while reducing the series resistance of the solar cell. Progress in paste materials leads to increased solar cell efficiency for the standard cell process. The introduction of new metal pastes has to be combined with careful optimisation of the process window in soldering during module built-up. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Characterization of laser-induced damage in silicon solar cells during selective ablation processes

    Energy Technology Data Exchange (ETDEWEB)

    Poulain, G. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France); Agence de l’environnement et de la Maîtrise de l’Energie, 20, avenue du Grésillé, BP 90406 49004 Angers Cedex 01 (France); Blanc, D., E-mail: daniele.blanc@insa-lyon.fr [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France); Focsa, A.; De Vita, M.; Fraser, K. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France); Sayad, Y. [Institut de Sciences et Technologies, Centre Universitaire de Souk Ahras, Route de Annaba, Souk Ahras (Algeria); Lemiti, M. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France)

    2013-05-15

    Selective laser ablation of silicon nitride layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed with a nanosecond UV laser at various energy densities ranging from 0.2 to 1.5 J cm{sup −2}. Optical microscopy was used as a simple mean to assess the ablation threshold that was correlated to the temperature at the interface between the silicon nitride coating and the silicon substrate. Minority carrier lifetime measurements were performed using a microwave photo-conductance decay technique. Band to band photoluminescence spectroscopy proved to be a sensitive technique to qualify the laser-induced damage to the silicon substrate. The crystalline structure of silicon seemed to be maintained after silicon nitride ablation as shown by UV reflectivity measurements. Laser parameters corresponding to fluences of around 0.4 J cm{sup −2} were found to achieve selective ablation of SiN{sub x} without causing detrimental damage to the surrounding material.

  9. Incoherent-light processing of single- and poly-crystalline silicon solar cells

    Science.gov (United States)

    Nielsen, L. D.; Larsen, A. N.

    Transient heating with incoherent continuous light from a xenon arc-lamp has been studied as a possible process step in the production of single- and poly-crystalline silicon solar cells. Annealing of phosphorus and arsenic ion implantations have been made, with phosphorus implantations leading to solar cell efficiences of 8.3 and 5.8 percent for 100 single crystal and Wacker-SILSO materials, respectively, both without AR-coating. Furthermore, incoherent-light induced diffusion of phosphorus from spin-on deposited doped oxide layer has been studied and has resulted in efficiencies of 7.9 and 6.6 percent, respectively, for the same two types of material. This latter process is concluded to be a promising technique for production of low-cost silicon solar cells with efficiencies of at least 10 percent without any vacuum or high-temperature furnace process steps.

  10. Optimal design of laterally assembled hexagonal silicon nanowires for broadband absorption enhancement in ultrathin solar cells

    Science.gov (United States)

    Shahraki, Mojtaba; Salehi, Mohammad Reza; Abiri, Ebrahim

    2015-11-01

    Design approaches to carry out broadband absorption in laterally assembled hexagonal silicon nanowire (NW) solar cells are investigated. Two different methods are proposed to improve the current density of silicon NW solar cells. It is observed that the key to the broadband absorption is disorder and irregularity. The first approach to reach the broadband absorption is using multiple NWs with different geometries. Nevertheless, the maximum enhancement is obtained by introducing irregular NWs. They can support more cavity modes, while scattering by NWs leads to broadening of the absorption spectra. An array of optimized irregular NWs also has preferable features compared to other broadband structures. Using irregular NW arrays, it is possible to improve the absorption enhancement of solar cells without introducing more absorbing material.

  11. Silicon material task - Low cost solar array project /JPL/DOE/

    Science.gov (United States)

    Lutwack, R.

    1979-01-01

    The paper describes the silicon material task of the low-cost solar array project, which has the objective of establishing a silicon production capability equivalent to 500 mW per year at a price less than 10 dollars/kg (1975 dollars) in 1986. The task program is divided into four phases: technical feasibility, scale-up studies (the present phase), experimental process system development units, and implementation of large-scale production plants, and it involves the development of processes for two groups of materials, that is, semiconductor grade and solar cell grade. In addition, the effects of impurities on solar cell performance are being investigated. Attention is given to problem areas of the task program, such as environmental protection, material compatibility between the reacting chemicals and materials of construction of the equipment, and waste disposal.

  12. Mapping boron in silicon solar cells using electron energy-loss spectroscopy

    DEFF Research Database (Denmark)

    Amorphous silicon solar cells typically consist of stacked layers deposited on plastic or metallic substrates making sample preparation for transmission electron microscopy (TEM) difficult. The amorphous silicon layer - the active part of the solar cell - is sandwiched between 10-nm-thick n- and p...... in the energies of plasmon peaks in the low loss region [5]. We use these approaches to characterize both a thick n-p junction and the 10-nm-thick p-doped layer of a working solar cell. [1] U. Kroll, C. Bucher, S. Benagli, I. Schönbächler, J. Meier, A. Shah, J. Ballutaud, A. Howling, Ch. Hollenstein, A. Büchel, M....... Hashikawa, K. Kajiwara, T. Yaguchi, M. Konno, H. Mori, Applied Physics Express 1 (2008) 074001 [5] V. Olevano, L. Reining, Physical Review Letters 86 (2001) 5962...

  13. Microsystems enabled photovoltaics: 14.9% efficient 14 {mu}m thick crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Campa, Jose L. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States); Okandan, Murat; Resnick, Paul J.; Clews, Peggy; Pluym, Tammy; Grubbs, Robert K.; Gupta, Vipin P.; Nielson, Gregory N. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); Zubia, David [University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States)

    2011-02-15

    Crystalline silicon solar cells 10-15 times thinner than traditional commercial c-Si cells with 14.9% efficiency are presented with modeling, fabrication, and testing details. These cells are 14 {mu}m thick, 250 {mu}m wide, and have achieved 14.9% solar conversion efficiency under AM 1.5 spectrum. First, modeling results illustrate the importance of high-quality passivation to achieve high efficiency in thin silicon, back contacted solar cells. Then, the methodology used to fabricate these ultra thin devices by means of established microsystems processing technologies is presented. Finally, the optimization procedure to achieve high efficiency as well as the results of the experiments carried out with alumina and nitride layers as passivation coatings are discussed. (author)

  14. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647), Ecole Polytechnique, 91128 Palaiseau Cedex (France)

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  15. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Science.gov (United States)

    Cabarrocas, Pere Roca i.; Chaâbane, N.; Kharchenko, A. V.; Tchakarov, S.

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  16. Porous silicon multitexture for photoelectric converter structures of solar energy

    Directory of Open Access Journals (Sweden)

    Yerokhov V. Yu.

    2009-06-01

    Full Text Available The possibility of creation of porous silicon’s multitexture, as material of structure of photoelectric converter (FEC is shown. The morphological elements of porous silicon are considered relative to different pore parameters. The integral coefficient of frontal surface reflection of FEC with using of columnar multitexture in the range from 400 nm up to 1150 nm decreased.

  17. Porous silicon multitexture for photoelectric converter structures of solar energy

    OpenAIRE

    Yerokhov V. Yu.; Druzinin A. O.

    2009-01-01

    The possibility of creation of porous silicon’s multitexture, as material of structure of photoelectric converter (FEC) is shown. The morphological elements of porous silicon are considered relative to different pore parameters. The integral coefficient of frontal surface reflection of FEC with using of columnar multitexture in the range from 400 nm up to 1150 nm decreased.

  18. Platinum nanoparticle interlayer promoted improvement in photovoltaic performance of silicon/PEDOT:PSS hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Xiao-Qing; Liu, L.F., E-mail: lifeng.liu@inl.int

    2015-01-15

    Inorganic–organic hybrid solar cells have attracted considerable interest in recent years for their low production cost, good mechanical flexibility and ease of processing of polymer films over a large area. Particularly, silicon/conducting polymer hybrid solar cells are extensively investigated and widely believed to be a low-cost alternative to the crystalline silicon solar cells. However, the power conversion efficiency of silicon/conducting polymer solar cells remains low in case hydrogen-terminated silicon is used. In this paper, we report that by introducing a platinum nanoparticle interlayer between the hydrogen-terminated silicon and the conducting polymer poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonate), namely PEDOT:PSS, the power conversion efficiency of the resulting Si/PEDOT:PSS hybrid solar cells can be improved by a factor of 2–3. The possible mechanism responsible for the improvement has been investigated using different techniques including impedance spectroscopy, Mott–Schottky analysis and intensity modulated photocurrent/photovoltage spectroscopy (IMPS/IMVS). The results show that with a platinum nanoparticle interlayer, both the series resistance and charge transport/transfer resistance of the Si/PEDOT:PSS hybrid solar cells are reduced leading to an increased short circuit current density, and the built-in voltage at the space charge region is raised facilitating electron-hole separation. Moreover, the lifetime of charge carriers in the Si/PEDOT:PSS solar cells is extended, namely, the recombination is effectively suppressed which also contributes to the improvement of photovoltaic performance. - Graphical abstract: A platinum nanoparticle interlayer electrolessly deposited between the n-Si:H and PEDOT:PSS can markedly improve the photovoltaic performance of the resulting Si/PEDOT:PSS hybrid solar cells. - Highlights: • A Pt nanoparticle layer is introduced between the Si and PEDOT:PSS in hybrid cells. • The Pt interlayer

  19. High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer

    Science.gov (United States)

    Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

    2015-11-01

    Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/PEDOT:PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/PEDOT:PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/PEDOT:PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells.

  20. Project to ferro solar: solar silicon manufacture quality by the metallurgical way; Proyecto ferrosolar: fabricacion de silicio calidad solar por la via metalurgica

    Energy Technology Data Exchange (ETDEWEB)

    Buyon, C. J.; Miranda, V. A.; Souto, S. a.; Miguez, N. J. M.; Perez, V. A.

    2008-07-01

    The spectacular development in the last years of the photovoltaic industry has generated big tension on the market of his principal raw material: the silicon. In Galicia is located the unique factory of metallurgical silicon of the Iberian Peninsular and quartz mines of great quality that are a property of the Group Ferro atlantica I+D is the company that concentrates the activities of R and D inside the above mentioned Group and is developing, from 9 years ago, the project Ferro Solar that consists of the purification for the metallurgical route of the silicon. The success in this project would give to the photovoltaic industry a much more abundant, new and cheap source of silicon that the current route across the polysilicon. The project is developing in the Factory of Sabon - Arteixo- Corunna and already there are obtained very encouraging results, which are an object of this first public presentation. (Author)

  1. 19.4%-efficient large-area fully screen-printed silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gatz, Sebastian; Hannebauer, Helge; Hesse, Rene; Werner, Florian; Schmidt, Arne; Dullweber, Thorsten; Bothe, Karsten [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Schmidt, Jan; Brendel, Rolf [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Institute of Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover (Germany)

    2011-04-15

    We demonstrate industrially feasible large-area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 x 125 mm{sup 2} p-type 2-3 {omega} cm boron-doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen-printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic-layer-deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S{sub rear} = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J{sub sc} of up to 38.9 mA/cm{sup 2} and V{sub oc} of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full-area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen-printed solar cells. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Opto-electrical magnetic-field studies on solar silicon; Optoelektrische Magnetfelduntersuchungen an Solarsilizium

    Energy Technology Data Exchange (ETDEWEB)

    Buchwald, Rajko

    2010-05-21

    In the framework of this thesis opto-electrical studies on polycrystalline (pc) solar cells and solar materials have been performed. For this by magnetic-field topographical measurements the current distributions of the silicon samples were determined. For this the new, highly position-resolving magnetic-field measuring method CAIC has been developed and applied. The arrangement, the measurement principle, and the particularities of the method are explained. The results of the CAIC measurements have been compared with results of optical and electrical characterization methods, like the IR transmission-light microscopy, the LBIC, and the LIT method and evaluated. Special grain boundaries in the pc silicon samples with and without pn junction show photocurrent fluxes to the grain boundaries. On the base of the performed studies and the assumption of the existence of a grain-boundary decoration the current-flow model of an electrically active grain boundary is shown for a sample with pn junction as well as for a sample without pn junction. Furthermore macroscopical SiC and Si{sub 3}N{sub 4} precipitations in pc silicon were studied. By means of CAIC measurements hereby the position and the orientation of the conducting and near-surface precipitations could be determined. A current-flow model for macroscopic precipitations in silicon samples without pn junction is presented. Furthermore cell microcracks, failures in the contact structure and layout differences of the contact structure are uniquely detected by CAIC measurements on solar cells.

  3. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  4. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Science.gov (United States)

    Derbouz, K.; Michel, T.; De Moro, F.; Spiegel, Y.; Torregrosa, F.; Belouet, C.; Slaoui, A.

    2013-09-01

    In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template) using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD) or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  5. Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cudzinovic, M.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

  6. Efficient solar photocatalytic activity of TiO2 coated nano-porous silicon by atomic layer deposition

    Science.gov (United States)

    Sampath, Sridhar; Maydannik, Philipp; Ivanova, Tatiana; Shestakova, Marina; Homola, Tomáš; Bryukvin, Anton; Sillanpää, Mika; Nagumothu, Rameshbabu; Alagan, Viswanathan

    2016-09-01

    In the present study, TiO2 coated nano-porous silicon (TiO2/PS) was prepared by atomic layer deposition (ALD) whereas porous silicon was prepared by stain etching method for efficient solar photocatalytic activity. TiO2/PS was characterized by FESEM, AFM, XRD, XPS and DRS UV-vis spectrophotometer. Absorbance spectrum revealed that TiO2/PS absorbs complete solar light with wave length range of 300 nm-800 nm and most importantly, it absorbs stronger visible light than UV light. The reason for efficient solar light absorption of TiO2/PS is that nanostructured TiO2 layer absorbs UV light and nano-porous silicon layer absorbs visible light which is transparent to TiO2 layer. The amount of visible light absorption of TiO2/PS directly increases with increase of silicon etching time. The effect of silicon etching time of TiO2/PS on solar photocatalytic activity was investigated towards methylene blue dye degradation. Layer by layer solar absorption mechanism was used to explain the enhanced photocatalytic activity of TiO2/PS solar absorber. According to this, the photo-generated electrons of porous silicon will be effectively injected into TiO2 via hetero junction interface which leads to efficient charge separation even though porous silicon is not participating in any redox reactions in direct.

  7. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  8. Silicon solar cells with high open-circuit voltage

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.; Kirkpatrick, A. R.; Mccrosky, A.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

  9. Analysis of defect structure in silicon. Silicon sheet growth development for the large area silicon sheet task of the Low-Cost Solar array Project

    Science.gov (United States)

    Natesh, R.; Mena, M.; Plichta, M.; Smith, J. M.; Sellani, M. A.

    1982-01-01

    One hundred ninety-three silicon sheet samples, approximately 880 square centimeters, were analyzed for twin boundary density, dislocation pit density, and grain boundary length. One hundred fifteen of these samples were manufactured by a heat exchanger method, thirty-eight by edge defined film fed growth, twenty-three by the silicon on ceramics process, and ten by the dendritic web process. Seven solar cells were also step-etched to determine the internal defect distribution on these samples. Procedures were developed or the quantitative characterization of structural defects such as dislocation pits, precipitates, twin & grain boundaries using a QTM 720 quantitative image analyzing system interfaced with a PDP 11/03 mini computer. Characterization of the grain boundary length per unit area for polycrystalline samples was done by using the intercept method on an Olympus HBM Microscope.

  10. Micro-spectroscopy on silicon wafers and solar cells

    Directory of Open Access Journals (Sweden)

    Gundel Paul

    2011-01-01

    Full Text Available Abstract Micro-Raman (μRS and micro-photoluminescence spectroscopy (μPLS are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes.

  11. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    Science.gov (United States)

    de Jong, M. M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic substrates can be a solution. In this thesis, we investigate the possibilities of depositing thin film solar cells directly onto cheap plastic substrates. Micro-textured glass and sheets, which have a wide range of applications, such as in green house, lighting etc, are applied in these solar cells for light trapping. Thin silicon films can be produced by decomposing silane gas, using a plasma process. In these types of processes, the temperature of the growing surface has a large influence on the quality of the grown films. Because plastic substrates limit the maximum tolerable substrate temperature, new methods have to be developed to produce device-grade silicon layers. At low temperature, polysilanes can form in the plasma, eventually forming dust particles, which can deteriorate device performance. By studying the spatially resolved optical emission from the plasma between the electrodes, we can identify whether we have a dusty plasma. Furthermore, we found an explanation for the temperature dependence of dust formation; Monitoring the formation of polysilanes as a function of temperature using a mass-spectrometer, we observed that the polymerization rate is indeed influenced by the substrate temperature. For solar cell substrate material, our choice was polycarbonate (PC), because of its low cost, its excellent transparency and its relatively high glass transition temperature of 130-140°C. At 130°C we searched for deposition recipes for device quality silicon, using a very high frequency plasma enhanced chemical deposition process. By diluting the feedstock silane with hydrogen gas, the silicon quality can be improved for amorphous silicon (a-Si), until we reach the

  12. Process monitoring of multicrystalline silicon solar cells with quasi-steady state photoconductance measurements

    Energy Technology Data Exchange (ETDEWEB)

    Stocks, M.; Cuevas, A.; Blakers, A. [Australian National Univ., Canberra (Australia). Dept. of Engineering

    1997-12-31

    Multicrystalline silicon (mc-Si) solar cell efficiency is strongly related to the bulk material lifetime due to the low electronic quality. The minority carrier lifetime of multicrystalline silicon can vary greatly during the high temperature furnace steps involved in cell processing. Quasi-steady state photoconductance (QssPc) measurements were used to monitor the lifetime of different mc-Si substrates and process sequences. It is important to identify the beneficial or detrimental processing steps, to minimize recombination (and therefore efficiency) at the completion of processing. The benefits of phosphorus diffusions and aluminum alloys were identified, while oxidations of ungettered substrates and metallization contributed to increased recombination and decreased effective lifetimes.

  13. Experimental and computer studies of the radiation effects in silicon solar cells

    Science.gov (United States)

    Leadon, R. E.; Naber, J. A.; Passenheim, B. C.

    1971-01-01

    A summary of selected experimental results obtained on lithium-diffused bulk silicon is presented. Particular emphasis is placed on the radiation-induced degradation and thermal annealing of minority carriers in bulk silicon because solar cell output is related to the minority carrier lifetime. The temperature dependence of the minority carrier lifetime indicates the density and energy levels of the recombination centers and provides clues to their identity. Electron spin resonance and infrared absorption techniques are used to investigate the introduction and anneal of three specific radiation induced defects, which are thought to contribute to the recombination process.

  14. Sprayed and Spin-Coated Multilayer Antireflection Coating Films for Nonvacuum Processed Crystalline Silicon Solar Cells

    OpenAIRE

    Abdullah Uzum; Masashi Kuriyama; Hiroyuki Kanda; Yutaka Kimura; Kenji Tanimoto; Hidehito Fukui; Taichiro Izumi; Tomitaro Harada; Seigo Ito

    2017-01-01

    Using the simple and cost-effective methods, spin-coated ZrO2-polymer composite/spray-deposited TiO2-compact multilayer antireflection coating film was introduced. With a single TiO2-compact film on the surface of a crystalline silicon wafer, 5.3% average reflectance (the reflectance average between the wavelengths of 300 nm and 1100 nm) was observed. Reflectance decreased further down to 3.3% after forming spin-coated ZrO2 on the spray-deposited TiO2-compact film. Silicon solar cells were fa...

  15. Application of PECVD for bulk and surface passivation of high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Krygowski, T.; Doshi, P.; Cai, L.; Doolittle, A.; Rohatgi, A. [Georgia Inst. of Technology, Atlanta, GA (United States)

    1995-08-01

    Plasma enhanced chemical vapor deposition (PECVD) passivation of bulk and surface defects has been shown to be an important technique to improve the performance of multicrystalline silicon (mc-Si) and single crystalline silicon solar cells. In this paper, we report the status of our on-going investigation into the bulk and surface passivation properties of PECVD insulators for photovoltaic applications. The objective of this paper is to demonstrate the ability of PECVD films to passivate the front (emitter) surface, bulk, and back surface by proper tailoring of deposition and post-PECVD annealing conditions.

  16. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  17. Silicon on ceramic process. Silicon sheet growth development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Annual report No. 2, September 17, 1976--September 19, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

    1977-09-30

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. In the past year significant progress was made in all areas of the program. The physical and chemical properties of the standard mullite refractory used for the majority of the coating runs (McDanel MV20 and Coors S1SI) have been characterized. A number of experimental compositions have been identified and procured from Coors. Characterization of the standard compositions revealed that the thermal expansion of mullite depends on both relative amounts of glass phase and on the impurity level in the glass. Since the thermal expansion in mullite exceeds that of silicon, the silicon coating should be in a state of compression. This was confirmed by x-ray measurements. After modifying and cleaning the dip-coating facility, silicon on ceramic (SOC) solar cells were fabricated which demonstrate that the SOC process can produce silicon of solar cell quality. SOC cells having 1 cm/sup 2/ active areas demonstrated measured conversion efficiencies as high as 7.2 percent. Typical open-ciruit voltages (V/sub oc/) and short-circuit current densities (J/sub sc/) were 0.51 volt and 20 mA/cm/sup 2/, respectively. Since the active surface of these solar cells is a highly reflective ''as-grown'' surface, one can expect improvement in J/sub sc/ after an anti-reflection (AR) coating is applied. Results of an economic analysis of the SOC process are presented.

  18. Ultraviolet Plasmonic Aluminium Nanoparticles for Highly Efficient Light Incoupling on Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Yinan Zhang

    2016-05-01

    Full Text Available Plasmonic metal nanoparticles supporting localized surface plasmon resonances have attracted a great deal of interest in boosting the light absorption in solar cells. Among the various plasmonic materials, the aluminium nanoparticles recently have become a rising star due to their unique ultraviolet plasmonic resonances, low cost, earth-abundance and high compatibility with the complementary metal-oxide semiconductor (CMOS manufacturing process. Here, we report some key factors that determine the light incoupling of aluminium nanoparticles located on the front side of silicon solar cells. We first numerically study the scattering and absorption properties of the aluminium nanoparticles and the influence of the nanoparticle shape, size, surface coverage and the spacing layer on the light incoupling using the finite difference time domain method. Then, we experimentally integrate 100-nm aluminium nanoparticles on the front side of silicon solar cells with varying silicon nitride thicknesses. This study provides the fundamental insights for designing aluminium nanoparticle-based light trapping on solar cells.

  19. Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Martin A. Green

    2007-08-01

    Full Text Available We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

  20. Develop silicone encapsulation systems for terrestrial silicon solar arrays. Final report

    Energy Technology Data Exchange (ETDEWEB)

    None

    1979-12-01

    This work resulted in two basic accomplishments. The first was the identification of DOW CORNING Q1-2577 as a suitable encapsulant material for use in cost effective encapsulation systems. The second was the preparation of a silicon-acrylic cover material containing a durable ultraviolet screening agent for the protection of photo-oxidatively sensitive polymers. The most expeditious method of fabrication is one in which the encapsulant material performs the combined function of adhesive, pottant, and outer cover. The costs of the encapsulant can be minimized by using it as a thin conformal coating. One encapsulation system using silicones was identified which provided protection to photovoltaic cells and survived the JPL qualification tests. This encapsulation system uses DOW CORNING Q1-2577, a conformal coating from Dow Corning, as the combined adhesive, pottant and cover material. The lowest cost encapsulation system using Q1-2577 had Super Dorlux as the substrate structural member. The overall material cost of this encapsulation system is 0.74 cents/ft/sup 2/ (1980 dollars) based on current material prices, which could decrease with increased production of Q1-2577. Subsequent to identifying the best silicone encapsulation system, a silicone acrylic cover material containing a durable ultraviolet screening agent was prepared and its effectiveness in protecting photo-oxidatively sensitive polymers was demonstrated.

  1. Development of Silver-Free Silicon Photovoltaic Solar Cells with All-Aluminum Electrodes

    Science.gov (United States)

    Sun, Wen-Cheng

    To date, the most popular and dominant material for commercial solar cells is crystalline silicon (or wafer-Si). It has the highest cell efficiency and cell lifetime out of all commercial solar cells. Although the potential of crystalline-Si solar cells in supplying energy demands is enormous, their future growth will likely be constrained by two major bottlenecks. The first is the high electricity input to produce crystalline-Si solar cells and modules, and the second is the limited supply of silver (Ag) reserves. These bottlenecks prevent crystalline-Si solar cells from reaching terawatt-scale deployment, which means the electricity produced by crystalline-Si solar cells would never fulfill a noticeable portion of our energy demands in the future. In order to solve the issue of Ag limitation for the front metal grid, aluminum (Al) electroplating has been developed as an alternative metallization technique in the fabrication of crystalline-Si solar cells. The plating is carried out in a near-room-temperature ionic liquid by means of galvanostatic electrolysis. It has been found that dense, adherent Al deposits with resistivity in the high 10--6 Ω-cm range can be reproducibly obtained directly on Si substrates and nickel seed layers. An all-Al Si solar cell, with an electroplated Al front electrode and a screen-printed Al back electrode, has been successfully demonstrated based on commercial p-type monocrystalline-Si solar cells, and its efficiency is approaching 15%. Further optimization of the cell fabrication process, in particular a suitable patterning technique for the front silicon nitride layer, is expected to increase the efficiency of the cell to ~18%. This shows the potential of Al electroplating in cell metallization is promising and replacing Ag with Al as the front finger electrode is feasible.

  2. Pyramidal texturing of silicon surface via inorganic-organic hybrid alkaline liquor for heterojunction solar cells

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Zhao, Ying

    2015-10-01

    We demonstrate a new class of silicon texturing approach based on inorganic (sodium hydroxide, NaOH) and organic (tetramethylammonium hydroxide, TMAH) alkaline liquor etching processes for photovoltaic applications. The first stage of inorganic alkaline etching textures the silicon surface rapidly with large pyramids and reduces the cost. The subsequent organic alkaline second-etching improves the coverage of small pyramids on the silicon surface and strip off the metallic contaminants produced by the first etching step. In addition, it could smoothen the surface of the pyramids to yield good morphology. In this study, the texturing duration of both etching steps was controlled to optimize the optical and electrical properties as well as the surface morphology and passivation characteristics of the silicon substrates. Compared with traditional inorganic NaOH texturing, this hybrid process yields smoother (111) facets of the pyramids, fewer residual Na+ ions on the silicon surface, and a shorter processing period. It also offers the advantage of lower cost compared with the organic texturing method based on the use of only TMAH. We applied this hybrid texturing process to fabricate silicon heterojunction solar cells, which showed a remarkable improvement compared with the cells based on traditional alkaline texturing processes.

  3. Progress on the emitter wrap-through silicon solar cell

    Science.gov (United States)

    Gee, J. M.; Buck, M. E.; Schubert, W. K.; Basore, P. A.

    The Emitter Wrap-Through (EWT) solar cell is a back-contacted solar cell with a carrier-collection junction (emitter) on the front surface. Elimination of grids from the front surface allows for higher performance by eliminating grid-obscuration losses and reducing series resistance, while keeping an emitter on the front surface maintains high collection efficiency in solar-grade materials with modest diffusion lengths. The EWT cell uses laser-drilled vias to wrap the emitter diffusion on the front surface to interdigitated contacts on the back surface. We report on progress towards demonstration of two concepts for the EWT cell. The first EWT concept uses a fabrication sequence based on heavily diffused grooves and plated metallizations, and the second EWT concept uses a single furnace step and screen-printed metallizations. We also report on demonstration of double-sided carrier collection in the EWT cell.

  4. Spectral Transmittance of Di-methyl Silicon Oil as a Heat Transfer Material for Concentrator Solar Cells

    Institute of Scientific and Technical Information of China (English)

    张博阳; 王一平; 黄群武; 冯加和; 崔勇

    2015-01-01

    The accelerated life test was carried out to investigate the change of spectral transmittance of di-methyl silicon oil and the effects on the electrical performance of silicon solar cell. The di-methyl silicon oil samples be-fore and after accelerated life test were analyzed by FT-IR , GC-MS and LC-MS. The ring compounds and linear compounds with larger molecular weight were detected. The spectral transmittance of di-methyl silicon oil de-creased because the chromophore and auxochrome of the products made a sunlight receive decrease on the surface of the solar cell, and resulted in the reduction of cell performance. According to the decrease of spectral transmit-tance of di-methyl silicon oil, two recovery methods were proposed. The results showed that extraction was supe-rior to vacuum distillation in recovering the aged di-methyl silicon oil.

  5. Thin-film monocrystalline-silicon solar cells based on a seed layer approach with 11% efficiency

    Science.gov (United States)

    Gordon, I.; Qiu, Y.; Van Gestel, D.; Poortmans, J.

    2010-09-01

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. Almost half of the price of wafer-based silicon solar modules is currently due to the cost of the silicon wafers themselves. Using crystalline-silicon thin-film as the active material would substantially reduce the silicon consumption while still ensuring a high cell-efficiency potential and a stable cell performance. One way to create a crystalline-silicon thin film on glass is by using a seed layer approach in which a thin crystalline-silicon layer is first created on a non-silicon substrate, followed by epitaxial thickening of this layer. In this paper, we present new solar cell results obtained on 10-micron thick monocrystalline-silicon layers, made by epitaxial thickening of thin seed layers on transparent glass-ceramic substrates. We used thin (001)-oriented silicon single-crystal seed layers on glass-ceramic substrates provided by Corning Inc. that are made by a process based on anodic bonding and implant-induced separation. Epitaxial thickening of these seed layers was realized in an atmospheric-pressure chemical vapor deposition system. Simple solar cell structures in substrate configuration were made from the epitaxial mono-silicon layers. The Si surface was plasma-textured to reduce the front-side reflection. No other light trapping features were incorporated. Efficiencies of up to 11% were reached with Voc values above 600 mV indicating the good electronic quality of the material. We believe that by further optimizing the material quality and by integrating an efficient light trapping scheme, the efficiency potential of these single-crystal silicon thin films on glass-ceramics should be higher than 15%.

  6. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    Science.gov (United States)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  7. In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

    OpenAIRE

    Duy Phong Pham; Huu Truong Nguyen; Bach Thang Phan; Thi My Dung Cao; Van Dung Hoang; Vinh Ai Dao; Junsin Yi; Cao Vinh Tran

    2014-01-01

    Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codop...

  8. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

  9. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution

    OpenAIRE

    Bao, Xiao-Qing; Cerqueira, M.F.; Alpuim, P.; Liu, Lifeng

    2015-01-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. L. F. Liu acknowledges the financial support by the FCT Investigator grant (IF/01595/2014).

  10. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  11. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  12. Application of laser technology in high efficiency silicon solar cell manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Long, W.X.; Tu, J.L.; Wang, Z.G.; Cui, H.Y.; Deng, J.L.; Liu, Z.M.; Liao, H. [Yunnan Normal Univ., Yunnan (China). Solar Energy Research Inst., Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology

    2008-07-01

    This paper examined the use of laser processing applications in solar cell fabrication. Laser processing is used to improve the electrical performance of solar cells as well as to reduce their manufacturing cost. Laser processes included laser scribing and cutting; laser fired contacts; wrap through technology; laser chemical processing; and the application of thin film devices. The study also examined the use of laser-fired contact (LFC) process schemes for the production of silicon (Si) Results of the study indicated that the lasers resulted in decreased wafer thickness and increased wafer sizes. LFC schemes can be applied on almost all advanced solar cell structures, including metal or emitter wrap-through cells and interdigitated back contact cells. Laser doping and via hole drilling techniques are also feasible in industrial applications. The use of laser technologies is expected to reduce costs. It was concluded that laser technologies are an appropriate choice for solar cell manufacturing processes. 12 refs., 8 figs.

  13. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.

    2015-01-01

    © 2015 The Royal Society of Chemistry. A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. This work paves the way for integrating perovskites into a low-cost and high-efficiency (>25%) tandem cell.

  14. Analysis of Pyramidal Surface Texturization of Silicon Solar Cells by Molecular Dynamics Simulations

    Directory of Open Access Journals (Sweden)

    Hsiao-Yen Chung

    2008-01-01

    Full Text Available The purpose of this paper is to explore the relations between surface texturization and absorptance of multicrystalline silicon solar cells by a simple new model, based on the classic molecular (MD dynamics simulation, alternative to complex electron-photon interactions to analyze the surface texturization of solar cells. In this study, the large tilted angle leads to the lower efficiency of solar cell. To consider the effect of incident angle, a range of high efficiency exists due to the increasing probability of second reflection. Furthermore, the azimuth angle of incident light also affects the efficiency of solar cells. Our results agree well with previous studies. This MD model can potentially be used to predict the efficiency promotion in any optical reflection-absorption cases.

  15. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  16. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays.

    Science.gov (United States)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-06-07

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.

  17. Gas-Phase Interactions as Sources of Contamination in Solar Silicon

    Science.gov (United States)

    Meteleva-Fischer, Y. V.; Böttger, A. J.; Sloof, W. G.; Kraaijveld, B.

    2014-06-01

    Avoiding contamination of silicon for solar cells during high-temperature processing steps is a key issue. Contamination of silicon via direct contact due to diffusion processes has been recognized. Here, it is shown that interactions with the gas phase also are a potential source of contamination. Thermodynamic calculations performed for a temperature range of 373 K to 1873 K (100 °C to 1600 °C) and total pressure of 10 kPa predict the formation of volatile species that are harmful for photovoltaic properties. Volatile species form due to graphite-moisture interaction and the interaction of this gas mixture with compounds commonly present in silicon production units: graphite, quartz, alumina, boron nitride, and iron. The results of the calculations are supported by the data of the surface contamination of exposed graphite furnace parts.

  18. Fabrication of carbon-coated silicon nanowires and their application in dye-sensitized solar cells.

    Science.gov (United States)

    Kim, Junhee; Lim, Jeongmin; Kim, Minsoo; Lee, Hae-Seok; Jun, Yongseok; Kim, Donghwan

    2014-11-12

    We report the fabrication of silicon/carbon core/shell nanowire arrays using a two-step process, involving electroless metal deposition and chemical vapor deposition. In general, foreign shell materials that sheath core materials change the inherent characteristics of the core materials. The carbon coating functionalized the silicon nanowire arrays, which subsequently showed electrocatalytic activities for the reduction of iodide/triiodide. This was verified by cyclic voltammetry and electrochemical impedance spectroscopy. We employed the carbon-coated silicon nanowire arrays in dye-sensitized solar cells as counter electrodes. We optimized the carbon shells to maximize the photovoltaic performance of the resulting devices, and subsequently, a peak power conversion efficiency of 9.22% was achieved.

  19. Enhancement in photovoltaic properties of silicon solar cells by surface plasmon effect of palladium nanoparticles

    Science.gov (United States)

    Atyaoui, Malek; Atyaoui, Atef; Khalifa, Marwen; Elyagoubi, Jalel; Dimassi, Wissem; Ezzaouia, Hatem

    2016-04-01

    This work presents the surface Plasmon effect of Palladium nanoparticles (Pd NPs) on the photovoltaic properties of silicon solar cells. Pd NPs were deposited on the p-type silicon base of the n+/p junction using a chemical deposition method in an aqueous solution containing Palladium (II) Nitrate (PdNO3)2 and Ammonium Hydroxide (NH4OH) followed by a thermal treatment at 500 °C under nitrogen atmosphere. Chemical composition and surface morphology of the treated silicon base were examined by energy dispersive X-ray (EDX) spectroscopy, scanning electronic microscopy (SEM) and Atomic Force Microscopy (AFM). The effect of the deposited Pd NPs on the electrical properties was evaluated by the internal quantum efficiency (IQE) and current-voltage (I-V) measurements. The results indicate that the formation of the Pd NPs is accompanied by an enhanced light absorption and improved photovoltaic parameters.

  20. Optical absorption enhancement in slanted silicon nanocone hole arrays for solar photovoltaics

    Science.gov (United States)

    Zhang, Shu-Yuan; Liu, Wen; Li, Zhao-Feng; Liu, Min; Liu, Yu-Sheng; Wang, Xiao-Dong; Yang, Fu-Hua

    2016-10-01

    We investigate slanted silicon nanocone hole arrays as light absorbing structures for solar photovoltaics via simulation. With only 1-μm equivalent thickness, a maximum short-circuit current density of 34.9 mA/cm2 is obtained. Moreover, by adding an Ag mirror under the whole structure, a short-circuit current density of 37.9 mA/cm2 is attained. It is understood that the optical absorption enhancement mainly results from three aspects. First, the silicon nanocone holes provide a highly efficient antireflection effect. Second, after breaking the geometric symmetry, the slanted silicon nanocone hole supports more resonant absorption modes than vertical structures. Third, the Fabry-Perot resonance enhances the light absorption after adding an Ag mirror. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274066, 61474115, and 61504138) and the National High Technology Research and Development Program of China (Grant No. 2014AA032602).

  1. Low Angle Silicon Sheet Growth. Large Area Silicon Sheet Task Low Cost Solar Array Project

    Science.gov (United States)

    1982-01-01

    The results of a program to demonstrate the feasibility of a low angle silicon ribbon growth process are described. Twenty-six experimental runs were performed. Ribbons were grown at pull rates from 5 to 68 cm/min. Ribbon lengths up to 74 cm were grown while widths varied from 5 to 25 mm. Thicknesses varied from 0.6 to 2.5 mm, with typical values of about 1 mm.

  2. Optimization of sodium carbonate texturization on large-area crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Marrero, N.; Gonzalez-Diaz, B.; Guerrero-Lemus, R.; Hernandez-Rodriguez, C. [Departamento de Fisica Basica, Universidad de La Laguna, Avda, Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Borchert, D. [Auf der Reihe 2, Institut fuer Solare Energiesysteme, Fraunhofer Institut, 45884 Gelsenkirchen (Germany)

    2007-12-14

    This work describes a texturization method for monocrystalline silicon solar cells based on a mixture of sodium carbonate and sodium hydrogen carbonate solutions. A specific solution has been found that results in an optimal etching rate, the lowest surface reflectance and a homogeneous density of pyramidal structures on the silicon surface. The subsequent phosphorus diffusion with rapid thermal processes has been modified in order to drastically reduce the process time and, simultaneously, to obtain a high homogeneity of the sheet resistance values and improved photocarriers lifetimes. 100 x 100 mm solar cells with an efficiency of 15.8% have been obtained compared to an efficiency of 14.7% for the reference cell. (author)

  3. Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

    Science.gov (United States)

    Lai, Donny; Tan, Yew Heng; Gunawan, Oki; He, Lining; Seng Tan, Chuan

    2011-07-01

    We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.

  4. Plan for Subdividing Genesis Mission Diamond-on-Silicon 60000 Solar Wind Collector

    Science.gov (United States)

    Burkett, Patti J.; Allton, J. A.; Clemett, S. J.; Gonzales, C. P.; Lauer, H. V., Jr.; Nakamura-Messenger, K.; Rodriquez, M. C.; See, T. H.; Sutter, B.

    2013-01-01

    NASA's Genesis solar wind sample return mission experienced an off nominal landing resulting in broken, albeit useful collectors. Sample 60000 from the collector is comprised of diamond-like-carbon film on a float zone (FZ) silicon wafer substrate Diamond-on-Silicon (DOS), and is highly prized for its higher concentration of solar wind (SW) atoms. A team of scientist at the Johnson Space Center was charged with determining the best, nondestructive and noncontaminating method to subdivide the specimen that would result in a 1 sq. cm subsample for allocation and analysis. Previous work included imaging of the SW side of 60000, identifying the crystallographic orientation of adjacent fragments, and devising an initial cutting plan.

  5. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au [Centre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, Victoria 3122 (Australia); Tao, Zhikuo [College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Ong, Thiam Min Brian [Plasma Sources and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  6. Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Ching-In Wu

    2013-01-01

    Full Text Available The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same k value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters.

  7. Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes

    Institute of Scientific and Technical Information of China (English)

    WU Shan-Shan; WANG Lei; YANG De-Ren

    2011-01-01

    @@ The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot, which contain deteriorated regions, is investigated.It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells(about 16%)is achieved.It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions.Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not.Therefore, it is suggested that the border of a me-Si ingot could be used to fabricate high efficiency solar cells, which will increase me-Si utilization effectively.%The behavior of wafers and solar cells from the border of a multicrystalline silicon (mc-Si) ingot, which contain deteriorated regions, is investigated. It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells (about 16%) is achieved. It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions. Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not. Therefore, it is suggested that the border of a mc-Si ingot could be used to fabricate high efficiency solar cells, which will increase mc-Si utilization effectively.

  8. A theory of the n-i-p silicon solar cell

    Science.gov (United States)

    Goradia, C.; Weinberg, I.; Baraona, C.

    1981-01-01

    A computer model has been developed, based on an analytical theory of the high base resistivity BSF n(+)(pi)p(+) or p(+)(nu)n(+) silicon solar cell. The model makes very few assumptions and accounts for nonuniform optical generation, generation and recombination in the junction space charge region, and bandgap narrowing in the heavily doped regions. The paper presents calculated results based on this model and compares them to available experimental data. Also discussed is radiation damage in high base resistivity n(+)(pi)p(+) space solar cells.

  9. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel D. Tune

    2013-12-01

    Full Text Available The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  10. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Directory of Open Access Journals (Sweden)

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  11. High-temperature CVD for crystalline-silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Faller, F.R.; Hurrle, A.

    1999-10-01

    The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that the authors have constructed and characterized. The system fulfills basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of the system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement.

  12. Graphene as transparent and current spreading electrode in silicon solar cell

    Directory of Open Access Journals (Sweden)

    Sanjay K. Behura

    2014-11-01

    Full Text Available Fabricated bi-layer graphene (BLG has been studied as transparent and current spreading electrode (TCSE for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%, in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  13. Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles.

    Science.gov (United States)

    Liu, Kong; Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Wang, Zhanguo

    2013-02-18

    Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture our hybrid cells. Both short-circuit current and external quantum efficiency measurements show an enhancement in optical absorption of organic layer, especially at lower wavelengths.

  14. Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

    Science.gov (United States)

    Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.

    1987-07-01

    A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.

  15. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    Directory of Open Access Journals (Sweden)

    L. Shen

    2014-02-01

    Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

  16. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  17. Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Rentsch, J.

    2005-04-15

    Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

  18. Effect of production processes on the fracture strength of silicon solar cells

    Science.gov (United States)

    Chen, C. P.; Royal, E. L.; Klink, H.

    1980-01-01

    Fracture of Czochralski silicon wafers during processing is an important factor in solar cell yield and cost. A fracture-mechanics test and analysis program was developed to evaluate fracture strength changes in the in-process wafer-to-cell processing at different stages on a manufacturer's production line. The strength data were described by Weibull statistical analysis and can be interpreted with the surface-flaw distribution of each of the process steps.

  19. Passivation of the surface of rear contact solar cells by porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Nichiporuk, O. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine) and Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)]. E-mail: oleksiy.nichiporuk@insa-lyon.fr; Kaminski, A. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Lemiti, M. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Fave, A. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Litvinenko, S. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine); Skryshevsky, V. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine)

    2006-07-26

    In this paper we analyse the passivation of the front surface of p-Si interdigitated rear contacts solar cell (IBC) by a thin porous silicon (PS) layer. Effectively, an efficiency improvement of 87% in relative was observed after porous silicon layer formation on the front surface of the IBC cell. The origin of surface passivation by the PS layer was studied by Laser Beam Induced Current (LBIC) method. The front surface of rear contacts cell with thin porous silicon layer was scanned by a modulated red laser beam in presence of a permanent light with different wavelengths and intensities. It was shown that without permanent illumination, the photocurrent of the cell with PS layer is very low, even lower than for a cell with unpassivated surface. However with short permanent wavelength illumination a strong increase of photocurrent was observed (8-10 times{exclamation_point}). The light-dependent porous silicon passivation phenomenon is explained by a significant negative charge accumulation at the PS/p-Si interface traps under illumination. This leads to the formation of a hi-low (p{sup +}/p) junction at the front surface of the cell and to the reduction of the front surface recombination rate, like in Front Surface Field Solar Cell.

  20. Horizontal Silicon Nanowires with Radial p-n Junctions: A Platform for Unconventional Solar Cells.

    Science.gov (United States)

    Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; Celano, Thomas A; Cahoon, James F

    2013-06-20

    The silicon p-n junction is the most successful solar energy technology to date, yet it accounts for a marginal percentage of worldwide energy production. To change the status quo, a disruptive technological breakthrough is needed. In this Perspective, we discuss the potential for complex silicon nanowires to serve as a platform for next-generation photovoltaic devices. We review the synthesis, electrical characteristics, and optical properties of core/shell silicon nanowires that are subwavelength in diameter and contain radial p-n junctions. We highlight the unique features of these nanowires, such as optical antenna effects that concentrate light and intense built-in electric fields that enable ultrafast charge-carrier separation. We advocate a paradigm in which nanowires are arranged in periodic horizontal arrays to form ultrathin devices. Unlike conventional planar silicon, nanowire structures provide the flexibility to incorporate multiple semiconductor, dielectric, and metallic materials in a single system, providing the foundation for a disruptive, unconventional solar energy technology.

  1. Surface morphology and impurity distribution of electron beam recrystallized silicon films on low cost substrates for solar cell absorber

    Institute of Scientific and Technical Information of China (English)

    FU Li; GROMBALL F; MüLLER J

    2006-01-01

    A line shaped electron beam recrystallised polycrystalline silicon film on the low cost substrate was investigated for the use of the solar cell absorber. The applied EB energy density strongly influences the surface morphology of the film system. Lower EB energy density results in droplet morphology and the rougher SiO2 capping layer due to the low fluidity. With the energy increasing, thecapping layer becomes smooth and continuous and less and small pinholes form in the silicon film. Tungstendisilicide (WSi2) is formed at the interface tungsten/silicon but also at the grain boundaries of the silicon. Because of the fast melting and cooling of the silicon film, the eutectic of silicon and tungstendisilicide mainly forms at the grain boundary of the primary silicon dendrites. The SEM-EDX analysis shows that there are no chlorine and hydrogen in the area surrounding a pinhole after recrystallization because of outgassing during the solidification.

  2. Enabling unassisted solar water splitting by iron oxide and silicon

    Science.gov (United States)

    Jang, Ji-Wook; Du, Chun; Ye, Yifan; Lin, Yongjing; Yao, Xiahui; Thorne, James; Liu, Erik; McMahon, Gregory; Zhu, Junfa; Javey, Ali; Guo, Jinghua; Wang, Dunwei

    2015-06-01

    Photoelectrochemical (PEC) water splitting promises a solution to the problem of large-scale solar energy storage. However, its development has been impeded by the poor performance of photoanodes, particularly in their capability for photovoltage generation. Many examples employing photovoltaic modules to correct the deficiency for unassisted solar water splitting have been reported to-date. Here we show that, by using the prototypical photoanode material of haematite as a study tool, structural disorders on or near the surfaces are important causes of the low photovoltages. We develop a facile re-growth strategy to reduce surface disorders and as a consequence, a turn-on voltage of 0.45 V (versus reversible hydrogen electrode) is achieved. This result permits us to construct a photoelectrochemical device with a haematite photoanode and Si photocathode to split water at an overall efficiency of 0.91%, with NiFeOx and TiO2/Pt overlayers, respectively.

  3. The silicon solar satellite power system - A net energy analysis

    Science.gov (United States)

    Hannon, B.; Naughton, J. P.

    The physical aspects and net energy balance of a Satellite Solar Power System (SSPS) are examined. The feasibility of operating with or without laser annealing for the cells, possible variations in the total system costs, the projected worth of the energy, and the R&D costs are explored. The energy needed to mine, refine, fabricate, manufacture, launch, and maintain the SSPS materials and structures are included in the energy analysis, and cost-to-energy ratio of energy used to energy produced graphs are provided for the cases of the use or non-use of laser annealing for radiation protection for the solar cells. The resulting energy ratios indicate that the reference SSPS compares unfavorably with coal or nuclear earth-based plants, although further research is necessary to determine what level of technology is actually required for construction of the SSPS.

  4. Silicon pin solar cells investigated by multi-frequency EDMR

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Christoph; Teutloff, Christian; Behrends, Jan; Bittl, Robert [Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Fehr, Matthias; Schnegg, Alexander; Lips, Klaus [Institut fuer Silizium-Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialien und Energie, Kekulestr. 5, 12489 Berlin (Germany)

    2011-07-01

    Electrically detected magnetic resonance (EDMR) can be used to investigate paramagnetic centres influencing charge transport in semiconductors even at concentrations well below the sensitivity threshold of conventional electron paramagnetic resonance (EPR). This technique measures conductivity changes in the sample that occur when spin transitions cause an enhancement or a quenching of currents. EDMR was e.g. successfully employed to microcrystalline Si pin solar cells in X-band (9.7 GHz). We present the application of EDMR to Si pin solar cells at Q-band frequency (34 GHz). We could demonstrate a gain of spectral resolution. With multi-frequency EDMR we distinguished between field-dependent and field-independent interactions. Further, we realized EDMR in a non-resonant setup at 94 GHz (W-band) and show first results.

  5. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Science.gov (United States)

    Höger, Ingmar; Himmerlich, Marcel; Gawlik, Annett; Brückner, Uwe; Krischok, Stefan; Andrä, Gudrun

    2016-01-01

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  6. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  7. Glass frits coated with silver nanoparticles for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yingfen, E-mail: lyf350857423@163.com; Gan, Weiping; Zhou, Jian; Li, Biyuan

    2015-06-30

    Graphical abstract: - Highlights: • Silver-coated glass frits for solar cells were prepared by electroless plating. • Gum Arabic was used as the activating agent of glass frits. • Silver-coated glass frits can improve the photovoltaic performances of solar cells. - Abstract: Glass frits coated with silver nanoparticles were prepared by electroless plating. Gum Arabic (GA) was used as the activating agent of glass frits without the assistance of stannous chloride or palladium chloride. The silver-coated glass frits prepared with different GA dosages were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and thermogravimetric analysis (TGA). The characterization results indicated that silver-coated glass frits had the structures of both glass and silver. Spherical silver nanoparticles were distributed on the glass frits evenly. The density and particle size of silver nanoparticles on the glass frits can be controlled by adjusting the GA dosage. The silver-coated glass frits were applied to silver pastes to act as both the densification promoter and silver crystallite formation aid in the silver electrodes. The prepared silver-coated glass frits can improve the photovoltaic performances of solar cells.

  8. Optimization methods and silicon solar cell numerical models

    Science.gov (United States)

    Girardini, K.

    1986-01-01

    The goal of this project is the development of an optimization algorithm for use with a solar cell model. It is possible to simultaneously vary design variables such as impurity concentrations, front junction depth, back junctions depth, and cell thickness to maximize the predicted cell efficiency. An optimization algorithm has been developed and interfaced with the Solar Cell Analysis Program in 1 Dimension (SCAPID). SCAPID uses finite difference methods to solve the differential equations which, along with several relations from the physics of semiconductors, describe mathematically the operation of a solar cell. A major obstacle is that the numerical methods used in SCAPID require a significant amount of computer time, and during an optimization the model is called iteratively until the design variables converge to the value associated with the maximum efficiency. This problem has been alleviated by designing an optimization code specifically for use with numerically intensive simulations, to reduce the number of times the efficiency has to be calculated to achieve convergence to the optimal solution. Adapting SCAPID so that it could be called iteratively by the optimization code provided another means of reducing the cpu time required to complete an optimization. Instead of calculating the entire I-V curve, as is usually done in SCAPID, only the efficiency is calculated (maximum power voltage and current) and the solution from previous calculations is used to initiate the next solution.

  9. Silicon-on-ceramic process: silicon sheet growth and device development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Solar Array Project. Quarterly report No. 11, January 1-March 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P.W.; Zook, J.D.; Heaps, J.D.; Grung, B.L.; Koepke, B.; Schuldt, S.B.

    1979-04-30

    The purpose of the research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 12 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A dip-coating method for putting silicon on ceramic (SOC) has been shown to produce solar-cell-quality sheet silicon. This method and a continuous coating process also being investigated have excellent scale-up potential which offers an outstanding, cost-effective way to manufacture large-area solar cells. Results and accomplishments are described.

  10. Silicon materials task of the Low-Cost Solar Array Project: Phase IV. Effects of impurities and processing on silicon solar cells. Twenty-first quarterly report, October-December 1980

    Energy Technology Data Exchange (ETDEWEB)

    Hopkins, R.H.; Hanes, M.H.; Davis, J.R.; Rohatgi, A.; Rai-Choudhury, P.; Mollenkopf, H.C.

    1981-01-30

    The overall objective of this program is to define the effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells. The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600/sup 0/C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after groth, preferentially segregates to grain boundaries and becomes electrically deactivated. Both Al and Au introduce deep levels when grown into silicon crystals. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty-year device lifetime. Combined electrical bias and thermal stressing of silicon solar cells containing Nb, Fe, Cu, Ti, Cr, and Ag, respectively produces no performance loss after 100 hour exposures up to 225/sup 0/C. Ti and V, but not Mo, can be gettered from polycrystalline silicon by POCl/sub 3/ or HCl at temperatures of 1000 and 1100/sup 0/C.

  11. Electrically active defects in solar grade multicrystalline silicon

    DEFF Research Database (Denmark)

    Dahl, Espen

    2013-01-01

    the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated......-SEM) for structural analysis. Some additional techniques have been implemented in order to fill in missing information. In addition, a part of the study aimed at improving the electrical performance of the material, by removing metallic impurities from active phases, with different gettering techniques. It was found...... with multicrystalline silicon, has been investigated in wafers based on different types of feedstock produced through a metallurgical process route. In order to provide detailed information on the nature of these defects, a set of complementary characterization methods has been implemented. These methods includes...

  12. Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1977-01-01

    A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

  13. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, R.C.

    1980-11-01

    Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

  14. Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

    Science.gov (United States)

    Shu, Zhan

    With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRVsolar cells using the stack structure for front surface passivation. Direct comparison shows that such low temperature deposited stack structure developed in this work achieves comparable device performance to the high temperature processed front surface passivation structure used in other high efficiency IBC solar cells. However, the lower fill factor (FF) of IBC-SHJ solar cell as compared with traditional front a-Si:H/c-Si heterojunction cell (HIT cell) greatly limits the overall performance of these devices. Two-dimensional (2D) simulations were used to comparatively model the HIT and IBC-SHJ solar cells to understand the underlying device physics which controls cell performance. The effects of a wide

  15. Application of ZnO nanoparticles to enhance photoluminescence in porous silicon and its possible utilization for improving the short wavelength quantum efficiency of silicon solar cell

    Science.gov (United States)

    Verma, Daisy; Kharkwal, Aneeta; Singh, S. N.; Singh, P. K.; Sharma, S. N.; Mehdi, S. S.; Husain, M.

    2014-11-01

    We have formed photoluminescent porous silicon (PS) layers and over which a ZnO layer (hereafter called ZnOPS layers) is deposited. We studied the photoluminescent properties of individual layers as well as the composite layer under excitation with 405 nm wavelength. Using the data of PL a theoretical analysis of a solar cell having such a composite layer of a given photoluminescent conversion efficiency ηPL on the front surface has been done. The condition of a photoluminescent composite layer (ZnOPS) useful for enhancing the spectral response of n+-p-p+ structured silicon solar cell has been identified.

  16. Production of Solar-Grade Silicon by the SiF4 and Mg Reaction

    Science.gov (United States)

    Xie, Xiaobing; Bao, Jianer; Sanjurjo, Angel

    2016-08-01

    Over 90 pct of the solar cells currently produced and installed are Si based, and this industrial dominance is expected to persist for the foreseeable future. The crystalline Si substrate accounts for a significant portion of the total cost of solar cells. In order to further reduce the cost of solar panels, there has been significant effort in producing inexpensive solar-grade Si, mainly through three paths: (1) modification of the Siemens process to lower production costs, (2) upgrading metallurgical-grade Si to reach solar-grade purity, and (3) by means of new metallurgical processes such as the reduction of a silicon halide, e.g., SiF4 or SiCl4, by a reactive metal such as Na or Zn. In this paper, we describe an alternative path that uses Mg to react with SiF4 to produce low-cost solar grade Si. Experimental conditions for complete reaction and separation of the products, Si and MgF2, as well as aspects of the reaction mechanism are described. The reaction involves both a heterogeneous liquid-gas phase reaction and a homogeneous gas-gas phase reaction. When pure Mg was used, the Si product obtained had sub-ppm levels of B and P impurities and is expected to be suitable for solar cell applications.

  17. Improving Efficiency of Multicrystalline Silicon and CIGS Solar Cells by Incorporating Metal Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ming-Jer Jeng

    2015-10-01

    Full Text Available This work studies the use of gold (Au and silver (Ag nanoparticles in multicrystalline silicon (mc-Si and copper-indium-gallium-diselenide (CIGS solar cells. Au and Ag nanoparticles are deposited by spin-coating method, which is a simple and low cost process. The random distribution of nanoparticles by spin coating broadens the resonance wavelength of the transmittance. This broadening favors solar cell applications. Metal shadowing competes with light scattering in a manner that varies with nanoparticle concentration. Experimental results reveal that the mc-Si solar cells that incorporate Au nanoparticles outperform those with Ag nanoparticles. The incorporation of suitable concentration of Au and Ag nanoparticles into mc-Si solar cells increases their efficiency enhancement by 5.6% and 4.8%, respectively. Incorporating Au and Ag nanoparticles into CIGS solar cells improve their efficiency enhancement by 1.2% and 1.4%, respectively. The enhancement of the photocurrent in mc-Si solar cells is lower than that in CIGS solar cells, owing to their different light scattering behaviors and material absorption coefficients.

  18. Application and analysis of silicon nitride films for surface passivation of high efficiency silicon solar cells

    NARCIS (Netherlands)

    Lamers, M.W.P.E.

    2015-01-01

    Two solar cell types are discussed in this thesis. Firstly, the Metal Wrap-Through cell, where the emitter-contact metallization of the front side is wrapped through holes in the wafer to the cell back. Optimization of several cell processing steps led to an increase of more than 2% absolute in cell

  19. Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications

    Energy Technology Data Exchange (ETDEWEB)

    Anil Kumar, R.; Suresh, M.S. [ISRO Satellite Centre, ISRO, Bangalore 560, 017 Kolhapur (India); Nagaraju, J. [Department of Instrumentation, Indian Institute of Science, Bangalore 560, 012 Kolhapur (India)

    2000-01-15

    The AC parameters of silicon (BSR and BSFR) solar cells and GaAs/Ge solar cell have been measured using impedance spectroscopy. Each cell capacitance, dynamic resistance and series resistance were measured and compared. GaAs/Ge solar cell has shown only the transition capacitance throughout its operating range while silicon (BSR and BSFR) solar cells exhibited both transition and diffusion capacitance. The theoretical and experimental values of dynamic resistance were compared and found in good agreement while the diode factor in silicon solar cells varies from 2 to 1, where as in GaAs/Ge solar cell it varies from 4 to 2 to 1.

  20. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

    Science.gov (United States)

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  1. Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

    Directory of Open Access Journals (Sweden)

    Atteq ur Rehman

    2013-01-01

    Full Text Available The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  2. Laser-zone growth in a Ribbon-To-Ribbon, RTR, process silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Gurtler, R. W.; Baghdadi, A.

    1977-01-01

    A ribbon-to-ribbon process was used for routine growth of samples for analysis and fabrication into solar cells. One lot of solar cells was completely evaluated: ribbon solar cell efficiencies averaged 9.23% with a highest efficiency of 11.7%. Spherical reflectors have demonstrated significant improvements in laser silicon coupling efficiencies. Material analyses were performed including silicon photovoltage and open circuit photovoltage diffusion length measurements, crystal morphology studies, modulus of rupture measurements, and annealing/gettering studies. An initial economic analysis was performed indicating that ribbon-to-ribbon add-on costs of $.10/watt might be expected in the early 1980's.

  3. Hybrid organic-inorganic heterojunction solar cells with 12% efficiency by utilizing flexible film-silicon with a hierarchical surface.

    Science.gov (United States)

    Thiyagu, Subramani; Hsueh, Chen-Chih; Liu, Chien-Ting; Syu, Hong-Jhang; Lin, Tzu-Ching; Lin, Ching-Fuh

    2014-03-21

    This paper reports an organic-inorganic hybrid solar cell with a hierarchical surface composed of high density silicon nanoholes and micro-desert textures. High-efficiency organic-inorganic hybrid solar cell Si/PEDOT-PSS with a hierarchical surface, showing a power conversion efficiency of 12%. The structure provides excellent light absorption over 97% for the spectral range of 300 to 1100 nm with a thickness of 60 μm due to internal multiple reflections caused by subwavelength features of high density silicon nanoholes and micro-desert textures. In addition, from the angle of incidence (AOI) observed, even at the large angle of 75°, the reflectance value still exhibits less than 1%. With the advantage of very thin silicon material and inexpensive processing, hybrid silicon/polymer solar cells are promising for various applications and thus could be an economically feasible alternative energy solution in the future.

  4. Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Zheng Xin-Xia; Xu Sheng-Zhi; Lin Quan; Wei Chang-Chun; Sun Jian; Geng Xin-Hua; Zhao Ying

    2011-01-01

    We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates.The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO.By controlling boron and phosphorus contaminations,a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm.In tandem devices,by thickness optimization of the microcrystalline silicon bottom solar cell,we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer.In order to enhance the performance of the tandem solar cells,an improved light trapping structure with a ZnO/Al back reflector is used.As a result,a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.

  5. Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells

    Science.gov (United States)

    Haase, F.; Eidelloth, S.; Horbelt, R.; Bothe, K.; Garralaga Rojas, E.; Brendel, R.

    2011-12-01

    We investigate power losses in back-contact back-junction monocrystalline thin-film silicon solar cells fabricated using the porous silicon layer transfer process. Our loss analysis combines two-dimensional finite element modeling and resistance network simulations. The input parameters of the finite element modeling are determined experimentally by measuring saturation current densities and sheet resistances on test samples prepared identically to the solar cells. Characteristic solar cell parameters such as short circuit current, open circuit voltage, fill factor, and efficiency of measured and network simulated current voltage characteristics investigated in this study match within an uncertainty of 5%. Free energy loss analysis serves as comparison of all losses in units of power per area at the maximum power point. The largest loss is bulk recombination due to a carrier lifetime of 2 μs in the epitaxial Si layer. Further significant losses result from recombination at the base contacts characterized by a diode saturation current density of 50 000 fA cm-2 as well as resistive losses due to lateral majority carrier current flows within the solar cell base and contact resistance losses.

  6. Viability study of porous silicon photonic mirrors as secondary reflectors for solar concentration systems

    Energy Technology Data Exchange (ETDEWEB)

    de la Mora, M.B.; Jaramillo, O.A.; Nava, R.; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, A. P. 34, 62580 Temixco, Morelos (Mexico); del Rio, J.A. [Centro Morelense de Innovacion y Transferencia Tecnologica, CCyTEM Camino Temixco a Emiliano Zapata, Km 0.3, Colonia Emiliano Zapata, 62760 Morelos (Mexico)

    2009-08-15

    In this paper we report the viability of using porous silicon photonic mirrors (PSPM) as secondary reflectors in solar concentration systems. The PSPM were fabricated with nanostructured porous silicon to reflect light from the visible range to the near infrared region (500-2500 nm), although this range could be tuned for specific wavelength applications. Our PSPM are multilayers of two alternated refractive indexes (1.5 and 2.0), where the condition of a quarter wavelength in the optical path was imposed. The PSPM were exposed to high radiation in a solar concentrator equipment. As a result, we observed a significant degradation of the mirrors at an approximated temperature of 900 C. In order to analyze the origin of the degradation of PSPM, we model the samples with a non-linear optical approach and study the effect of a temperature increase. Those theoretical and experimental studies allow us to conclude that the main phenomenon involved in the breakdown of the photonic mirrors is of thermal origin, produced by heterogeneous expansion of each layer. Our next step was to introduce a cooling system into the solar concentrator to keep the mirrors at approximately 70 C, with very good results. As a conclusion we propose the use of PSPM as selective secondary mirrors in solar concentration devices using temperature control to avoid thermal degradation. (author)

  7. Review of Back Contact Silicon Solar Cells for Low-Cost Application

    Energy Technology Data Exchange (ETDEWEB)

    Smith, David D.

    1999-08-04

    Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.

  8. Non-Vacuum Processed Polymer Composite Antireflection Coating Films for Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdullah Uzum

    2016-08-01

    Full Text Available A non-vacuum processing method for preparing polymer-based ZrO2/TiO2 multilayer structure antireflection coating (ARC films for crystalline silicon solar cells by spin coating is introduced. Initially, ZrO2, TiO2 and surface deactivated-TiO2 (SD-TiO2 based films were examined separately and the effect of photocatalytic properties of TiO2 film on the reflectivity on silicon surface was investigated. Degradation of the reflectance performance with increasing reflectivity of up to 2% in the ultraviolet region was confirmed. No significant change of the reflectance was observed when utilizing SD-TiO2 and ZrO2 films. Average reflectance (between 300 nm–1100 nm of the silicon surface coated with optimized polymer-based ZrO2 single or ZrO2/SD-TiO2 multilayer composite films was decreased down to 6.5% and 5.5%, respectively. Improvement of photocurrent density (Jsc and conversion efficiency (η of fabricated silicon solar cells owing to the ZrO2/SD-TiO2 multilayer ARC could be confirmed. The photovoltaic properties of Jsc, the open-circuit photo voltage (VOC, the fill factor (FF, and the η were 31.42 mA cm−2, 575 mV, 71.5% and 12.91%. Efficiency of the solar cells was improved by the ZrO2-polymer/SD-TiO2 polymer ARC composite layer by a factor of 0.8% with an increase of Jsc (2.07 mA cm−2 compared to those of fabricated without the ARC.

  9. Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Luis G. Gerling

    2015-10-01

    Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

  10. Defect annealing processes for polycrystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steffens, S., E-mail: simon.steffens@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Berlin (Germany); Becker, C. [Helmholtz-Zentrum Berlin, Berlin (Germany); Zollondz, J.-H., E-mail: hzollondz@masdarpv.com [CSG Solar AG, Thalheim (Germany); Chowdhury, A.; Slaoui, A. [L’Institut d’Électronique du Solide et des Systèmes, Strasbourg (France); Lindekugel, S. [Fraunhofer-Institut für Solare Energiesysteme, Freiburg (Germany); Schubert, U.; Evans, R. [Suntech R and D Australia Pty Ltd, Sydney (Australia); Rech, B. [Helmholtz-Zentrum Berlin, Berlin (Germany)

    2013-05-15

    Highlights: ► Defect annealing processes were applied to polycrystalline silicon thin films. ► Conventional rapid thermal annealing was compared to novel annealing processes using a laser system and a zone-melting recrystallization setup. ► The open circuit voltages could be enhanced from below 170 mV up to 482 mV. ► Increase in Sun's-V{sub OC} values with decrease in FWHM of the TO Raman phonon of crystalline silicon. ► Solar cells were fabricated for I–V-measurements: Best solar cell efficiency of 6.7%. -- Abstract: A variety of defect healing methods was analyzed for optimization of polycrystalline silicon (poly-Si) thin-film solar cells on glass. The films were fabricated by solid phase crystallization of amorphous silicon deposited either by plasma enhanced chemical vapor deposition (PECVD) or by electron-beam evaporation (EBE). Three different rapid thermal processing (RTP) set-ups were compared: A conventional rapid thermal annealing oven, a dual wavelength laser annealing system and a movable two sided halogen lamp oven. The two latter processes utilize focused energy input for reducing the thermal load introduced into the glass substrates and thus lead to less deformation and impurity diffusion. Analysis of the structural and electrical properties of the poly-Si thin films was performed by Suns-V{sub OC} measurements and Raman spectroscopy. 1 cm{sup 2} cells were prepared for a selection of samples and characterized by I–V-measurements. The poly-Si material quality could be extremely enhanced, resulting in increase of the open circuit voltages from about 100 mV (EBE) and 170 mV (PECVD) in the untreated case up to 480 mV after processing.

  11. Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ryningen, Birgit

    2008-07-01

    Included in this thesis are five publications and one report. The common theme is characterisation of directionally solidified multicrystalline silicon for solar cells. Material characterisation of solar cell silicon is naturally closely linked to both the casting process and to the solar cell processing: Many of the material properties are determined by the casting process, and the solar cell processing will to some extend determine which properties will influence the solar cell performance. Solar grade silicon (SoG-Si) made by metallurgical refining route and supplied by Elkem Solar was directionally solidified and subsequently characterised, and a simple solar cell process was applied. Except from some metallic co-precipitates in the top of the ingot, no abnormalities were found, and it is suggested that within the limits of the tests performed in this thesis, the casting and the solar cell processing, rather than the assumed higher impurity content, was the limiting factor. It is suggested in this thesis that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. The clusters will reduce the effect of gettering and even if gettering could be performed successfully, the clusters will still reduce the minority carrier mobility and hence the solar cell performance. It has further been pointed out that ingots solidified under seemingly equal conditions might have a pronounced difference in minority carrier lifetime. Ingots with low minority carrier lifetime have high dislocation densities. The ingots with the substantially higher lifetime seem all to be dominated by twins. It is also found a link between a higher undercooling and the ingots dominated by twins. It is suggested that the two types of ingots are subject to different nucleation and crystal growth mechanisms: For the ingots dominated by dislocations, which are over represented, the crystal growth is randomly nucleated at the

  12. Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications

    Institute of Scientific and Technical Information of China (English)

    YANG Cheng; ZHANG Gang; LEE Dae-Young; LI Hua-Min; LIM Young-Dae; Y00 Won Jong; PARK Young-Jun; KIM Jong-Min

    2011-01-01

    Self-assembly of silicon nanowire(SiNW)arrays is studied using SF6/02 plasma treatment. The self-assembly method can be applied to single- and poly-crystalline Si substrates. Plasma conditions can control the length and diameter of the SiNW arrays. Lower reflectance of the wire arrays over the wavelength range 200-1100nm is obtained. The conducting transparent indium-tin-oxide(ITO) electrode can be fully coated on the self-assembled SiNW arrays by sputtering. The ITO-coated SiNW solar cells show the same low surface light reflectance and a higher carrier collection efficiency than SiNW solar cells without ITO coating. An efficiency enhancement of around 3 times for ITO coated SiNW solar cells is demonstrated via experiments.

  13. Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Hsin-Yu Wu

    2016-11-01

    Full Text Available In this study, metal films are fabricated by using an in-line reactive direct current magnetron sputtering system. The aluminum–titanium (AlTi back contacts are prepared by changing the pressure from 10 mTorr to 25 mTorr. The optical, electrical and structural properties of the metal back contacts are investigated. The solar cells with the AlTi had lower contact resistance than those with the silver (Ag back contact, resulting in a higher fill factor. The AlTi contact can achieve a solar cell conversion efficiency as high as that obtained from the Ag contact. These findings encourage the potential adoption of AlTi films as an alternative back contact to silver for silicon thin-film solar cells.

  14. Black silicon laser-doped selective emitter solar cell with 18.1% efficiency

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Li, Hongzhao; To, Alexander;

    2016-01-01

    We report fabrication of nanostructured, laser-doped selective emitter (LDSE) silicon solar cells with power conversion efficiency of 18.1% and a fill factor (FF) of 80.1%. The nanostructured solar cells were realized through a single step, mask-less, scalable reactive ion etch (RIE) texturing...... efficiency indicates a promising potential, especially considering that the cell reported in this work is the first proof-of-concept and that the fabricated cell is not fully optimized in terms of plating, emitter sheet resistance and surface passivation. Due to the scalable nature and simplicity of RIE......-texturing as well as the LDSE process, we consider this specific combination a promising candidate for a cost-efficient process for future Si solar cells....

  15. Bio-inspired co-catalysts bonded to a silicon photocathode for solar hydrogen evolution

    DEFF Research Database (Denmark)

    Hou, Yidong; Abrams, Billie; Vesborg, Peter Christian Kjærgaard;

    2011-01-01

    part of the spectrum is utilized for hydrogen evolution while the blue part is reserved for the more difficult oxygen evolution. The samples have been illuminated with a simulated red part of the solar spectrum i.e. long wavelength (" > 620 nm) part of simulated AM 1.5G radiation. The current densities...... deposited on various supports. It will be demonstrated how this overpotential can be eliminated by depositing the same type of hydrogen evolution catalyst on p-type Si which can harvest the red part of the solar spectrum. Such a system could constitute the cathode part of a tandem dream device where the red...... at the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10%. The experimental observations are supported by DFT calculations of the Mo3S4 cluster adsorbed on the hydrogen-terminated silicon surface providing insights...

  16. Research on the optimum hydrogenated silicon thin films for application in solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃. The electrical,structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current-voltage (Ⅰ - Ⅴ) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

  17. Silicon Heterojunction Solar Cells: Temperature Impact on Passivation and Performance

    Energy Technology Data Exchange (ETDEWEB)

    Seif, J.; Krishnamani, G.; Demaurex, B.; Martin de Nicholas, S.; Holm, N.; Ballif, C.; De Wolf, S.

    2015-03-23

    Photovoltaic devices deployed in the field can reach operation temperatures (T) as high as 90 °C [1]. Hence, their temperature coefficients (TC1) are of great practical importance as they determine their energy yield. In this study we concentrate on T-related lifetime variations of amorphous/crystalline interfaces and study their influence on the TCs of the individual solar cell parameters. We find that both the open-circuit voltage (Voc) and fill factor (FF) are influenced by these lifetime variations. However, this is only a minor effect compared to the dominant increase of the intrinsic carrier density and the related increase in dark saturation current density. Additionally, in this paper we will show that the TCVoc does not depend solely on the initial value of the Voc [2, 3], but that the structure of the device has to be considered as well.

  18. Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Kai; Schiff, E.A. [Department of Physics, Syracuse University, 13244-1130 Syracuse, NY (United States); Ganguly, G. [BP Solar, 23168 Toano, VA (United States)

    2002-04-01

    We report infrared depletion modulation spectra for near-interface states in a-Si pin solar cells. The effect of additional visible illumination (optical bias) was explored as a means to separate the spectra for n/i and p/i interface states. We found a sharp, optical bias-induced spectral line near 0.8 eV. We attribute this line due to internal optical transitions of dopant-defect complexes in the a-SiC:H:B p-layer of the cells. We discuss the spatial location of the depletion modulation regions, and suggest that this location shifts across the n/i and p/i interfaces for cells with differing deposition and illumination conditions.

  19. A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    Liu Chin-Yi

    2010-01-01

    Full Text Available Abstract Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V.

  20. Systematic analysis of diffuse rear reflectors for enhanced light trapping in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pfeffer, Florian; Eisenlohr, Johannes; Basch, Angelika; Hermle, Martin; Lee, Benjamin G.; Goldschmidt, Jan Christoph

    2016-08-01

    Simple diffuse rear reflectors can enhance the light path length of weakly absorbed near infrared light in silicon solar cells and set a benchmark for more complex and expensive light trapping structures like dielectric gratings or plasmonic particles. We analyzed such simple diffuse rear reflectors systematically by optical and electrical measurements. We applied white paint, TiO2 nanoparticles, white backsheets and a silver mirror to bifacial silicon solar cells and measured the enhancement of the external quantum efficiency for three different solar cell geometries: planar front and rear side, textured front and planar rear side, and textured front and rear side. We showed that an air-gap between the solar cell and the reflector decreases the absorption enhancement significantly, thus white paint and TiO2 nanoparticles directly applied to the rear cell surface lead to the highest short circuit current density enhancements. The short circuit current density gains for a 200 um thick planar solar cell reached up to 1.8 mA/cm2, compared to a non-reflecting black rear side and up to 0.8 mA/cm2 compared to a high-quality silver mirror rear side. For solar cells with textured front side the short circuit current density gains are in the range between 0.5 and 1.0 mA/cm2 compared to a non-reflecting black rear side and do not significantly depend on the angular characteristic of the rear side reflector but mainly on its absolute reflectance.

  1. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures

    Science.gov (United States)

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-07-01

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells.We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the

  2. ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

    Directory of Open Access Journals (Sweden)

    Peter Pikna

    2014-10-01

    Full Text Available Thin film polycrystalline silicon (poly-Si solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ. Tested temperature of the sample (55°C – 110°C was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

  3. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    Science.gov (United States)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  4. Silicon-on ceramic process. Silicon sheet growth and device developmentt for the Large-Area Silicon Sheet Task of the Low-Cost Solar Array Project. Quarterly report No. 13, October 1-December 31, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P W; Zook, J D; Grung, B L; McHenry, K; Schuldt, S B

    1980-02-15

    Research on the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon is reported. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 11 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A variety of ceramic materials have been dip coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO/sub 2/ best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm/sup 2/ in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Crystal length is limited by the length of the substrate. The thickness of the coating and the size of the crystalline grains are controlled by the temperature of the melt and the rate at which the substrate is withdrawn from the melt. The solar-cell potential of this SOC sheet silicon is promising. To date, solar cells with areas from 1 to 10 cm/sup 2/ have been fabricated from material with an as-grown surface. Conversion efficiencies of about 10 percent with antireflection (AR) coating have been achieved. Such cells typically have open-circuit voltage and short-circuit current densities of 0.55V and 23 mA/cm/sup 2/, respectively.

  5. Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

    Science.gov (United States)

    Dickson, C. R.; Gould, R. K.; Felder, W.

    1981-01-01

    High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment.

  6. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  7. Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Montesdeoca-Santana, A. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen, Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Departamento de Energia Fotovoltaica, Instituto Tecnologico y de Energias Renovables. Poligono Industrial de Granadilla s/n, 38600 San Isidro-Granadilla de Abona (Spain); Jimenez-Rodriguez, E. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Ziegler, J. [Fraunhofer Institute for Solar Energy Systems, Laboratory- and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Velazquez, J.J. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna. Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Hohage, S.; Borchert, D. [Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Guerrero-Lemus, R., E-mail: rglemus@ull.es [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain)

    2011-11-15

    Highlights: > An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO{sub 3} stain etching to texture the surface. > FTIR analysis shows no influence of oxide passivation in this effect. > SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. > LBIC images show a reduction in IQE at extended defects in HF/HNO{sub 3} textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO{sub 3} solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

  8. Novel Ceramic Additives for Screen-Printable Silicon Solar Cell Metallization

    Science.gov (United States)

    Shih, Yu-Chou; Shao, Yue; Shi, Frank G.

    2016-08-01

    The interfacial structure between front-side silver electrodes and n-type silicon emitters plays a very crucial role for the electrical and mechanical properties of silicon solar cells. Studies show that the residual glass layers at the Ag/Si interfaces will significantly increase the contact resistance, and this subsequently leads to a decrease in the overall efficiency of the silicon solar cells. In this work, silver-coated nano-sized non-glass frits using an electroless plating method were employed to improve the interfacial conductivity. Transfer length method was applied to evaluate the electrical performance of the samples made with different ceramic additives. For samples made with nano-sized silver-coated ceramic additives, the improvement of conductivity was found to be about 22% compared to additives with the same compositions with no surface treatment. The results indicate that the silver layer on the surface of ceramic additives provides a conducting channel within the residual insulating layer and therefore reduces overall electrical resistance.

  9. Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Seung Hui; Kim, Yong Sung; Lee, Woo; Kim, Young Heon; Song, Jae Yong; Jang, Jong Shik; Park, Jae Hee; Kim, Kyung Joong [Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejeon (Korea, Republic of); Choi, Suk-Ho, E-mail: kjkim@kriss.re.kr [Department of Applied Physics, Kyung Hee University, Yongin 446-701 (Korea, Republic of)

    2011-10-21

    Active doping of B was observed in nanometer silicon layers confined in SiO{sub 2} layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of [SiO{sub 2} (8 nm)/B-doped Si(10 nm)]{sub 5} films turned out to be segregated into the Si/SiO{sub 2} interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above 1.1 x 10{sup 20} atoms cm{sup -3} and high active doping of 3 x 10{sup 20} atoms cm{sup -3} could be achieved. The active doping in ultra-thin Si layers was implemented for silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy-conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of 4 x 10{sup 20} atoms cm{sup -3}.

  10. 15% Power Conversion Efficiency from a Gated Nanotube/Silicon Nanowire Array Solar Cell

    Science.gov (United States)

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-03-01

    Despite their enhanced light trapping ability the performance of silicon nanowire array solar cells have, been stagnant with power conversion efficiencies barely breaking 10%. The problem is understood to be the consequence of a high photo-carrier recombination at the large surface area of the Si nanowire sidewalls. Here, by exploiting 1) electronic gating via an ionic liquid electrolyte to induce inversion in the n-type Si nanowires and 2) using a layer of single wall carbon nanotubes engineered to contact each nanowire tip and extract the minority carriers, we demonstrate silicon nanowire array solar cells with power conversion efficiencies of 15%. Our results allow for discrimination between the two principle means of avoiding front surface recombination: surface passivation and the use of local fields. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue a non-encapsulation based solution is also described. We gratefully acknowledge support from the National Science Foundation under ECCS-1232018.

  11. Enhancement of polycrystalline silicon solar cells using ultrathin films of silicon nanoparticle

    Science.gov (United States)

    Stupca, M.; Alsalhi, M.; Al Saud, T.; Almuhanna, A.; Nayfeh, M. H.

    2007-08-01

    Ultrathin films of highly monodispersed luminescent Si nanoparticles are directly integrated on polycrystalline Si solar cells. The authors monitor the open-circuit voltage and the short circuit current. The results demonstrate that films of 1nm blue luminescent or 2.85nm red luminescent Si nanoparticles produce large voltage enhancements with improved power performance of 60% in the UV/blue range. In the visible, the enhancements are ˜10% for the red and ˜3% for the blue particles. The results point to a significant role for charge resonant transport across the nanofilm and Schottky-like rectification at nanoparticle-metal interface.

  12. In-line high-rate evaporation of aluminum for the metallization of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mader, Christoph Paul

    2012-07-11

    This work focuses on the in-line high-rate evaporation of aluminum for contacting rear sides of silicon solar cells. The substrate temperature during the deposition process, the wafer bow after deposition, and the electrical properties of evaporated contacts are investigated. Furthermore, this work demonstrates for the first time the formation of aluminum-doped silicon regions by the in-line high-rate evaporation of aluminum without any further temperature treatment. The temperature of silicon wafers during in-line high-rate evaporation of aluminum is investigated in this work. The temperatures are found to depend on the wafer thickness W, the aluminum layer thickness d, and on the wafer emissivity {epsilon}. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 97%. This work also investigates the wafer bow after in-line high-rate evaporation and shows that the elastic theory overestimates the wafer bow of planar Si wafers. The lower bow is explained with plastic deformation in the Al layer. Due to the plastic deformation only the first 79 K in temperature decrease result in a bow formation. Furthermore the electrical properties of evaporated point contacts are examined in this work. Parameterizations for the measured saturation currents of contacted p-type Si wafers and of contacted boron-diffused p{sup +}-type layers are presented. The contact resistivity of the deposited Al layers to silicon for various deposition processes and silicon surface concentrations are presented and the activation energy of the contact formation is determined. The measured saturation current densities and contact resistivities of the evaporated contacts are used in one-dimensional numerical Simulations and the impact on energy conversion efficiency of replacing a screen-printed rear side by an evaporated rear side is presented. For the first time the formation of aluminum-doped p{sup +}-type (Al-p{sup +}) silicon regions by the in

  13. Coplanar back contacts for thin silicon solar cells

    Science.gov (United States)

    Storti, G.; Scheinine, A.; Whitehouse, D.; Wohlgemuth, J.; Wrigley, C.; Giuliano, M.

    1981-01-01

    The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.

  14. Application of DLTS to silicon solar cell processing

    Energy Technology Data Exchange (ETDEWEB)

    Reehal, H.S. [South Bank University, London (United Kingdom). School of Electrical, Electronic and Information Engineering; Lesniak, M.P. [B and W Ltd., Epsom (United Kingdom); Hughes, A.E. [BP Oil Technology Centre, Sunbury-on-Thames (United Kingdom)

    1996-03-14

    Deep level transient spectroscopy (DLTS) has been employed to study the cause of minority carrier lifetime degradation observed during the development phase of a single crystal solar cell production process. Results on float-zone (FZ) samples showed that this was due to Fe unintentionally introduced at low levels (close to or below the detection limit of conventional analytical techniques) during cell processing and that DLTS of FZ wafers can be used as a highly sensitive monitor of process impurities. The DLTS spectra of processed FZ wafers showed a single trap, 0.53 eV away from the band edge and with a concentration of {approx_equal} 10{sup 14} cm{sup -3}, attributable to an Fe-B complex. The feature was not present before processing. In Czochralski (CZ) wafers the situation was more complex. Two major Fe related majority carriers traps were observed in both seed-end and crucible-end wafers taken through the complete process cycle. One was consistent with the Fe-B complex whilst the other (at 0.33 eV from the band edge) was identified as an Fe-O complex. The concentrations of these traps lay in the range 10{sup 12}-10{sup 13} cm{sup -3} and showed a less marked increase after processing. The observations are again consistent with an increase in the Fe level and also the different oxygen contents of the starting wafers. (Author)

  15. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    Science.gov (United States)

    Liu, Y.

    2010-02-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modules on a plastic substrate. The first objective includes the development of suitable ZnO:Al TCO for nc Si:H single junction solar cells, fabrication of the aimed micromorph tandem solar cells on glass, and finally the optimization of the nc-Si:H i-layer for the depositions afterwards on Al foil. Chapter 3 addresses the improvement of texture etching of ZnO:Al by studying the HCl etching effect on ZnO:Al films sputter-deposited in a set substrate heater temperature series. With the texture-etched ZnO:Al front TCO, a single junction nc-Si:H solar cell was deposited with an initial efficiency of 8.33%. Chapter 4 starts with studying the light soaking and annealing effects on micromorph tandem solar cell. In the end, a highly stabilized bottom cell current limited tandem cell was made. The tandem shows an initial efficiency of 10.2%, and degraded only 6.9% after 1600 h of light soaking. In Chapter 5, the nc-Si:H i-layers were studied in 3 pressure and inter-electrode distance series. The correlations between plasma physics and the consequent i-layers’ properties are investigated. We show that the Raman crystalline ratio and porosity of the nc-Si:H layer have an interesting relation with the p•d product. By varying p and d, device quality nc-Si:H layer can be deposited at a high rate of 0.6 nm/s. These results in fact are a very important step for the second objective. The second objective is covered by the entire Chapter 6. All silicon layers are deposited on special aluminum

  16. Chemical bulk properties of multicrystalline silicon ingots for solar cells cast in silicon nitride crucibles

    Science.gov (United States)

    Modanese, C.; Di Sabatino, M.; Syvertsen, M.; Arnberg, L.

    2012-09-01

    Silicon nitride is an alternative material to the widely used silica crucibles for directional solidification of mc-Si ingots, its main advantages being the reusability in successive castings and elimination for a source for oxygen contamination of the ingot. In this work, several ingots were cast in these crucibles and compared to reference ingots cast in silica crucibles. The thermal properties of the Si3N4 crucible differ from those of the SiO2 crucible and lead to a different thermal history during melting and casting. The oxygen contamination of the ingot was observed to depend mainly on the melting and holding temperature, rather than on the crucible material. The lowest oxygen concentration was observed in the ingots with the lowest melting temperature. However, the thermal properties of the Si3N4 crucible influence the oxygen profile along ingot height, with a faster decrease in the concentration with increasing ingot height. This is believed to be due to a different mechanism for oxygen transport compared to that of the silica crucibles. The concentration of dopants in the ingots showed that contamination from the Si3N4 crucible occurred, probably due to diffusion of B- and P-oxides into the Si melt.

  17. Influence of ITO-Silver Wire Electrode Structure on the Performance of Single-Crystal Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Wern-Dare Jheng

    2012-01-01

    Full Text Available This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO and the high conductivity of the silver wire that were coated on the single crystal silicon solar cells increased photoelectron export, thus increasing the efficiency of the solar cell. The experiment utilized a sol-gel solution containing phosphorus that was spin coated on single-crystal silicon wafers; this phosphorus also served as a phosphorus diffusion source. A p-n junction was formed after annealing at high temperature, and the substrate was coated with silver wires and ITO films of various structures to produce the electrodes. This study proposed that applying a heat treatment to the aluminum of back electrodes would result in a higher efficiency for single-crystal silicon solar cells, whereas single-crystal silicon solar cells containing front electrodes with ITO film coated with silver wires would result in efficiencies that are higher than those achieved using pure ITO thin-film electrodes.

  18. Design and optimization of Ag-dielectric core-shell nanostructures for silicon solar cells

    Directory of Open Access Journals (Sweden)

    Feng-Xiang Chen

    2015-09-01

    Full Text Available Metal-dielectric core-shell nanostructures have been proposed as a light trapping scheme for enhancing the optical absorption of silicon solar cells. As a potential application of such enhanced effects, the scattering efficiencies of three core-shell structures (Ag@SiO2, Ag@TiO2, and Ag@ZrO2 are discussed using the Mie Scattering theory. For compatibility with experiment results, the core diameter and shell thickness are limited to 100 and 30 nm, respectively, and a weighted scattering efficiency is introduced to evaluate the scattering abilities of different nanoparticles under the solar spectrum AM 1.5. The simulated results indicate that the shell material and thickness are two key parameters affecting the weighted scattering efficiency. The SiO2 is found to be an unsuitable shell medium because of its low refractive index. However, using the high refractive index mediumTiO2 in Ag@TiO2 nanoparticles, only the thicker shell (30 nm is more beneficial for light scattering. The ZrO2 is an intermediate refractive index material, so Ag@ZrO2 nanoparticles are the most effective core-shell nanostructures in these silicon solar cells applications.

  19. Flexible amorphous silicon solar cells and their application to PV systems

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Y.; Fujikake, S.; Yoshida, T.; Sakai, H.; Natsume, F. [Fuji Electric Co. Ltd., Yokosuka, Kanagawa (Japan). New Energy Lab.

    1996-12-31

    Hydrogenated amorphous silicon (a-Si:H) solar cells are regarded as the next generation product following crystalline silicon (c-Si) solar cells. The performance of the large area cells has been improved to a practical application level and the durability has been confirmed by a number of outdoor tests at demonstration sites under various climatic conditions. The mass production technology for realizing low cost a-Si photovoltaic (PV) modules, however, has not been developed very well and is still in an elementary stage. A flexible a-Si:H PV module has been developed, which is rolled up around a cylindrical core, has a width of about 1 m, and is able to be cut to any length. The amorphous solar cell fabricated on a heat resistant plastic film with a thickness of 50 {mu}m has a new monolithic series connected structure named SCAF (Series-Connection through Apertures formed on Film) to obtain a high output voltage required for practical use. The details of the structure and the technology of the fabrication process are described as well as some of its applications. (author). 11 figs., 3 refs.

  20. Study on the SiN_x/Al rear reflectance performance of crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The performance of internal rear surface reflectance of crystalline silicon solar cells is becoming more and more important with the decrease of thickness of the silicon wafers. In this paper PC1D was used to simulate the correlations between the rear surface reflectance and the electrical as well as optical properties of the solar cells. The results showed that the short circuit current, open circuit voltage and quantum efficiency were all enhanced with the increase of the rear reflectance. When the rear reflectance increased from 60% to 100%, the short circuit current, open circuit voltage and maximum output power were improved by about 0.128 A, 0.007 V, and 0.066 W, respectively. The internal quantum efficiency was improved by 39.9%, the external quantum increased by 17.4%, and the efficiency of the solar cells was enhanced by 0.4% at 1100 nm wavelength. The screen-printing was selected to prepare SiNx/Al reflector, and experimental results showed that the SiNx/Al reflector has desired characteristic of internal rear reflectance, with the reflectivity of 15% higher than that of conventional aluminum BSF at 1100 nm wavelength.

  1. High-efficiency silicon solar-cell design and practical barriers

    Science.gov (United States)

    Mokashi, A.

    1985-01-01

    A numerical evaluation technique is used to study the impact of practical barriers, such as heavy doping effects (Auger recombination, band gap narrowing), surface recombination, shadowing losses and minority-carrier lifetime (Tau), on a high efficiency silicon solar cell performance. Considering a high Tau of 1 ms, efficiency of a silicon solar cell of the hypothetical case is estimated to be around 29%. This is comparable with (detailed balance limit) maximum efficiency of a p-n junction solar cell of 30%. Value of Tau is varied from 1 second to 20 micro. Heavy doping effects, and realizable values of surface recombination velocities and shadowing, are then considered in succession and their influence on cell efficiency is evaluated and quantified. These practical barriers cause the cell efficiency to reduce from the maximum value of 29% to the experimentally achieved value of about 19%. Improvement in open circuit voltage V sub oc is required to achieve cell efficiency greater than 20%. Increased value of Tau reduces reverse saturation current and, hence, improves V sub oc. Control of surface recombination losses becomes critical at higher V sub oc. Substantial improvement in Tau and considerable reduction in surface recombination velocities is essential to achieve cell efficiencies greater than 20%.

  2. Delayed fracture of silicon: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    Science.gov (United States)

    Chen, T. J.; Knapp, W. J.

    1978-01-01

    Bar specimens were cut from ingots of single crystal silicon, and acid etched prior to testing. Artificial surface flaws were introduced in specimens by indentation with a Knoop hardness tester. The specimens were loaded in four-point bending to 95 percent of the nominal fracture stress, while keeping the surface area, containing the flaw, wet with test liquids. No evidence of delayed fracture, and, therefore stress corrosion, of single crystal silicon was observed for liquid environments including water, acetone, and aqueous solutions of NaCl, NH4OH, and HNO3, when tested with a flaw parallel to a (110) surface. The fracture toughness was calculated.

  3. Flexible concentrator photovoltaics based on microscale silicon solar cells embedded in luminescent waveguides.

    Science.gov (United States)

    Yoon, Jongseung; Li, Lanfang; Semichaevsky, Andrey V; Ryu, Jae Ha; Johnson, Harley T; Nuzzo, Ralph G; Rogers, John A

    2011-06-14

    Unconventional methods to exploit monocrystalline silicon and other established materials in photovoltaic (PV) systems can create new engineering opportunities, device capabilities and cost structures. Here we show a type of composite luminescent concentrator PV system that embeds large scale, interconnected arrays of microscale silicon solar cells in thin matrix layers doped with luminophores. Photons that strike cells directly generate power in the usual manner; those incident on the matrix launch wavelength-downconverted photons that reflect and waveguide into the sides and bottom surfaces of the cells to increase further their power output, by more than 300% in examples reported here. Unlike conventional luminescent photovoltaics, this unusual design can be implemented in ultrathin, mechanically bendable formats. Detailed studies of design considerations and fabrication aspects for such devices, using both experimental and computational approaches, provide quantitative descriptions of the underlying materials science and optics.

  4. High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

    Science.gov (United States)

    Lu, Hai-bo; Chan, Benjamin C. Y.; Wang, Xiaolin; Tong Chua, Hui; Raston, Colin L.; Albu-Yaron, Ana; Levy, Moshe; Popowitz-Biro, Ronit; Tenne, Reshef; Feuermann, Daniel; Gordon, Jeffrey M.

    2013-08-01

    We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures—characterized by SEM, TEM, HRTEM, SAED, XRD and EDS—are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

  5. Ultrathin, flexible organic-inorganic hybrid solar cells based on silicon nanowires and PEDOT:PSS.

    Science.gov (United States)

    Sharma, Manisha; Pudasaini, Pushpa Raj; Ruiz-Zepeda, Francisco; Elam, David; Ayon, Arturo A

    2014-03-26

    Recently, free-standing, ultrathin, single-crystal silicon (c-Si) membranes have attracted considerable attention as a suitable material for low-cost, mechanically flexible electronics. In this paper, we report a promising ultrathin, flexible, hybrid solar cell based on silicon nanowire (SiNW) arrays and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The free-standing, ultrathin c-Si membranes of different thicknesses were produced by KOH etching of double-side-polished silicon wafers for various etching times. The processed free-standing silicon membranes were observed to be mechanically flexible, and in spite of their relatively small thickness, the samples tolerated the different steps of solar cell fabrication, including surface nanotexturization, spin-casting, dielectric film deposition, and metallization. However, in terms of the optical performance, ultrathin c-Si membranes suffer from noticeable transmission losses, especially in the long-wavelength region. We describe the experimental performance of a promising light-trapping scheme in the aforementioned ultrathin c-Si membranes of thicknesses as small as 5.7 μm employing front-surface random SiNW texturization in combination with a back-surface distribution of silver (Ag) nanoparticles (NPs). We report the enhancement of both the short-circuit current density (JSC) and the open-circuit voltage (VOC) that has been achieved in the described devices. Such enhancement is attributable to the plasmonic backscattering effect of the back-surface Ag NPs, which led to an overall 10% increase in the power conversion efficiency (PCE) of the devices compared to similar structures without Ag NPs. A PCE in excess of 6.62% has been achieved in the described devices having a c-Si membrane of thickness 8.6 μm. The described device technology could prove crucial in achieving an efficient, low-cost, mechanically flexible photovoltaic device in the near future.

  6. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W. [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul [National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-11-28

    Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  7. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  8. Matching of Silicon Thin-Film Tandem Solar Cells for Maximum Power Output

    Directory of Open Access Journals (Sweden)

    C. Ulbrich

    2013-01-01

    Full Text Available We present a meaningful characterization method for tandem solar cells. The experimental method allows for optimizing the output power instead of the current. Furthermore, it enables the extraction of the approximate AM1.5g efficiency when working with noncalibrated spectra. Current matching of tandem solar cells under short-circuit condition maximizes the output current but is disadvantageous for the overall fill factor and as a consequence does not imply an optimization of the output power of the device. We apply the matching condition to the maximum power output; that is, a stack of solar cells is power matched if the power output of each subcell is maximal at equal subcell currents. The new measurement procedure uses additional light-emitting diodes as bias light in the JV characterization of tandem solar cells. Using a characterized reference tandem solar cell, such as a hydrogenated amorphous/microcrystalline silicon tandem, it is possible to extract the AM1.5g efficiency from tandems of the same technology also under noncalibrated spectra.

  9. Organic-inorganic halide perovskite/crystalline silicon four-terminal tandem solar cells.

    Science.gov (United States)

    Löper, Philipp; Moon, Soo-Jin; de Nicolas, Sílvia Martín; Niesen, Bjoern; Ledinsky, Martin; Nicolay, Sylvain; Bailat, Julien; Yum, Jun-Ho; De Wolf, Stefaan; Ballif, Christophe

    2015-01-21

    Tandem solar cells constructed from a crystalline silicon (c-Si) bottom cell and a low-cost top cell offer a promising way to ensure long-term price reductions of photovoltaic modules. We present a four-terminal tandem solar cell consisting of a methyl ammonium lead triiodide (CH3NH3PbI3) top cell and a c-Si heterojunction bottom cell. The CH3NH3PbI3 top cell exhibits broad-band transparency owing to its design free of metallic components and yields a transmittance of >55% in the near-infrared spectral region. This allows the generation of a short-circuit current density of 13.7 mA cm(-2) in the bottom cell. The four-terminal tandem solar cell yields an efficiency of 13.4% (top cell: 6.2%, bottom cell: 7.2%), which is a gain of 1.8%abs with respect to the reference single-junction CH3NH3PbI3 solar cell with metal back contact. We employ the four-terminal tandem solar cell for a detailed investigation of the optical losses and to derive guidelines for further efficiency improvements. Based on a power loss analysis, we estimate that tandem efficiencies of ∼28% are attainable using an optically optimized system based on current technology, whereas a fully optimized, ultimate device with matched current could yield up to 31.6%.

  10. Performance characterization of thin-film-silicon based solar modules under clouded and clear sky conditions in comparison to crystalline silicon modules

    Science.gov (United States)

    Weicht, J. A.; Rasch, R.; Behrens, G.; Hamelmann, F. U.

    2016-07-01

    For a precise prediction of the energy yield of amorphous ( a-Si) and amorphous-microcrystalline tandem ( a-Si/ μc-Si) thinfilm-silicon photovoltaic (PV) modules it is important to know their performance ratio under different light conditions. The efficiency of solar modules is an important value for the monitoring and planning of PV-systems. The efficiency of a-Si solar modules shows no significant changes in the performance ratio at clouded or clear sky conditions. The efficiency of crystalline silicon-based ( c-Si) and a-Si/ μc-Si solar modules shows a lower efficiency for fully clouded conditions without direct irradiation compared to conditions with direct irradiation (clear sky). [Figure not available: see fulltext.

  11. Solar LBIC scanning of high-efficiency point-contact silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vorster, F.J.; Dyk, E.E. van [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University (NMMU), Port Elizabeth (South Africa)

    2008-07-01

    The induced current response from a High Efficiency Concentrator (HECO) monocrystaline Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. Recombination accounts for a major portion of the reduction in quantum efficiency in these cells. This paper examines the spatial distribution of defect mechanisms causing a reduction of collected photocurrent of the backside point-contact device structure while under spot illumination. By examining the bias dependence of the S-LBIC maps, the identification of current loss mechanisms of solar cells under concentrated solar irradiance may be improved. The techniques employed to interpret the spatially distributed I-V curves are discussed and results presented. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. The use of electro-deoxidation in molten salts to reduce the energy consumption of solar grade silicon and increase the output of PV solar cells

    Directory of Open Access Journals (Sweden)

    Paul R. Coxon

    2015-12-01

    Full Text Available Solar photovoltaics, based upon silicon, are the most popular form of solar cell with efficiencies around 20%. These efficiencies can be further increased by employing light trapping schemes to minimise optical losses through scattering and reflection which enhances the amount of light absorbed and number of photo-carriers generated. Typical approaches employ antireflection coatings (ARCs or texturise the surface of the silicon disks, so that the structure consists of an array of needles which can absorb most of the light. Usually, these structures are created by leaching the silicon with hydrofluoric-based acids or by reactive ion etching (RIE methods. This paper reviews some of the methods for improving the energy efficiency of silicon production, and describes the use of electro-deoxidation of SiO2 layers, on silicon, in molten calcium chloride to form nano-porous black silicon (b-Si structures. By coating b-Si surface with TiO2, a common ARC, extremely black surfaces with negligible reflectance of about 0.1%, are produced, which can have applications for low-cost high efficiency solar cells.

  13. Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

    Directory of Open Access Journals (Sweden)

    Abolmasov Sergey

    2016-01-01

    Full Text Available We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H, a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μc-SiOx:H layers and a MgF2 ARC.

  14. Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

    Science.gov (United States)

    Abolmasov, Sergey; Cabarrocas, Pere Roca i.; Chatterjee, Parsathi

    2016-01-01

    We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μc-SiOx:H layers and a MgF2 ARC.

  15. Texturing of the Silicon Substrate with Nanopores and Si Nanowires for Anti-reflecting Surfaces of Solar Cells

    Directory of Open Access Journals (Sweden)

    A.A. Druzhinin

    2015-06-01

    Full Text Available The paper presents the prospects of obtaining a functional multi-layer anti-reflecting coating of the front surface of solar cells by texturing the surface of the silicon by electrochemical etching. The physical model of the "Black Si" coating with discrete inhomogeneity of the refractive index and technological aspects of producing of "Black Si" functional anti-reflecting coatings were presented. The investigation results of the spectral characteristics of the obtained multilayer multiporous "Black Si" coatings for silicon solar cells made by electrochemical etching are presented. The possibility of creating the texture on a silicon wafer surface using silicon nanowires and ordered nanopores obtained by metal-assisted chemical etching was shown.

  16. Toward a systematic design theory for silicon solar cells using optimization techniques

    Science.gov (United States)

    Misiakos, K.; Lindholm, F. A.

    1986-01-01

    This work is a first detailed attempt to systematize the design of silicon solar cells. Design principles follow from three theorems. Although the results hold only under low injection conditions in base and emitter regions, they hold for arbitrary doping profiles and include the effects of drift fields, high/low junctions and heavy doping concentrations of donor or acceptor atoms. Several optimal designs are derived from the theorems, one of which involves a three-dimensional morphology in the emitter region. The theorems are derived from a nonlinear differential equation of the Riccati form, the dependent variable of which is a normalized recombination particle current.

  17. Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

    Science.gov (United States)

    Lu, Meijun; Bowden, Stuart; Das, Ujjwal; Birkmire, Robert

    2007-08-01

    This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.

  18. Amorphous Silicon Solar cells with a Core-Shell Nanograting Structure

    CERN Document Server

    Yang, L; Okuno, Y; He, S

    2011-01-01

    We systematically investigate the optical behaviors of an amorphous silicon solar cell based on a core-shell nanograting structure. The horizontally propagating Bloch waves and Surface Plasmon Polariton (SPP) waves lead to significant absorption enhancements and consequently short-circuit current enhancements of this structure, compared with the conventional planar one. The perpendicular carrier collection makes this structure optically thick and electronically thin. An optimal design is achieved through full-field numerical simulation, and physical explanation is given. Our numerical results show that this configuration has ultrabroadband, omnidirectional and polarization-insensitive responses, and has a great potential in photovoltaics.

  19. On the performance limiting behavior of defect clusters in commercial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Chen, W.; Jones, K. [National Renewable Energy Lab., Golden, CO (United States); Gee, J. [Sandia National Labs., Albuquerque, NM (United States)

    1998-09-01

    The authors report the observation of defect clusters in high-quality, commercial silicon solar cell substrates. The nature of the defect clusters, their mechanism of formation, and precipitation of metallic impurities at the defect clusters are discussed. This defect configuration influences the device performance in a unique way--by primarily degrading the voltage-related parameters. Network modeling is used to show that, in an N/P junction device, these regions act as shunts that dissipate power generated within the cell.

  20. Examination of silicon solar cells by means of the Scanning Laser Acoustic Microscope (SLAM)

    Science.gov (United States)

    Vorres, C.; Yuhas, D. E.

    1981-01-01

    The Scanning Laser Acoustic Microscope produces images of internal structure in materials. The acoustic microscope is an imaging system based upon acoustic rather than electromagnetic waves. Variations in the elastic propertis are primarily responsible for structure visualized in acoustic micrographs. The instrument used in these investigations is the SONOMICROSCOPE 100 which can be operated at ultrasonic frequencies of from 30 MHz to 500 MHz. The examination of the silicon solar cells was made at 100 MHz. Data are presented in the form of photomicrographs.

  1. Plasma texturing on large-area industrial grade CZ silicon solar cells

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Nordseth, Ørnulf; Boisen, Anja

    2013-01-01

    , and thus holds a significant potential for improvement of the cell performance compared to current industrial standards. The reflectance is shown to remain below that of conventional textured cells also at high angle of incidence. The process is shown to be equally applicable to mono-, multi- and quasi......-mono-crystalline Si. The process was successfully integrated in fabrication of solar cells using only industry standard processes on a Czochralski (CZ) silicon starting material. The resulting cell performance was compared to cells with conventional texturing. For cells, where the nanostructuring was not fully...

  2. Sensitivity analysis of high-efficiency silicon solar-cell design parameters

    Science.gov (United States)

    Mokashi, A. R.

    1984-01-01

    Silicon solar cell design parameters were investigated to determine their bearing on cell efficiency. Among the parameters reviewed were: (1) bulk resistivity, (2) minority carrier lifetime cell thickness, (3) front junction depth, (4) front surface doping concentration, (5) front surface recombination velocity, and (6) back surface contact. The following were concluded: (1) there is good agreement between experimental and simulation results; (2) sheet material quality improvement is needed for high efficiency cells; (3) 20% cell of this design is feasible with 10 ms bulk lifetime material; and (4) for achieving efficiencies higher than 20% new cell designs including thin cells with light trapping and back surface field should be considered.

  3. Stability of amorphous silicon alloy triple-junction solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K.; Aiga, M.; Otsubo, M.

    1987-06-25

    Results on reliability test for amorphous silicon alloy triple-junction solar cells and modules are described. It has been found that, for a-SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low-temperature-deposited microcrystalline p-layer for each sub cell and of thinner i-layers for the middle and the bottom cells improves stability of triple-junction cells, by enhancing the electric field in the i-layers.

  4. A miniature solar device for overall water splitting consisting of series-connected spherical silicon solar cells

    KAUST Repository

    Kageshima, Yosuke

    2016-04-18

    A novel “photovoltaics (PV) + electrolyzer” concept is presented using a simple, small, and completely stand-alone non-biased device for solar-driven overall water splitting. Three or four spherical-shaped p-n junction silicon balls were successfully connected in series, named “SPHELAR.” SPHELAR possessed small projected areas of 0.20 (3PVs) and 0.26 cm2 (4PVs) and exhibited working voltages sufficient for water electrolysis. Impacts of the configuration on the PV module performance were carefully analyzed, revealing that a drastic increase in the photocurrent (≈20%) was attained by the effective utilization of a reflective sheet. Separate investigations on the electrocatalyst performance showed that non-noble metal based materials with reasonably small sizes (<0.80 cm2) exhibited substantial currents at the PV working voltage. By combining the observations of the PV characteristics, light management and electrocatalyst performance, solar-driven overall water splitting was readily achieved, reaching solar-to-hydrogen efficiencies of 7.4% (3PVs) and 6.4% (4PVs).

  5. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

  6. Silicon-on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

    Science.gov (United States)

    Chapman, P. W.; Zook, J. D.; Heaps, J. D.; Grung, B. L.; Koepke, B.; Schuldt, S. B.

    1979-01-01

    The technical and economic feasibility of producing solar cell-quality silicon was investigated. This was done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress in the following areas was demonstrated: (1) fabricating a 10 sq cm cell having 9.9 percent conversion efficiency; (2) producing a 225 sq cm layer of sheet silicon; and (3) obtaining 100 microns thick coatings at pull speed of 0.15 cm/sec, although approximately 50 percent of the layer exhibited dendritic growth.

  7. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  8. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  9. Limitations on the open-circuit voltage imposed by P/+/ and N/+/ regions in silicon solar cells

    Science.gov (United States)

    Shibib, M. A.; Fossum, J. G.

    1981-02-01

    It is shown theoretically and experimentally that the emitter recombination current, which limits the open-circuit voltage of silicon solar cells, can be more easily suppressed in P(+)N cells than in N(+)P cells. This result is due to fundamental effects that occur in heavily doped silicon: degeneracy of the majority charge carriers, Auger recombination, and energy-band-gap narrowing. Cell designs to suppress the emitter current are discussed, and experimental data supporting our theoretical analysis are presented.

  10. The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1984-01-01

    It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

  11. Silicon Light: a European FP7 project aiming at high efficiency thin film silicon solar cells on foil. Monolithic series interconnection of flexible thin-film PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Haug, F.J. [Ecole Polytechnique Federale de Lausanne EPFL, Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland); Couty, P. [VHFTechnologies SA, Rue Edouard-Verdan 2, CH-1400 Yverdon-les-Bains (Switzerland); Duchamp, M. [Technical University of Denmark, Center for Electron Nanoscopy, DK-2800 Kongens Lyngby (Denmark); Schipper, W. [Nanoptics GmbH, Innungstr.5, 21244 Buchholz (Germany); Krc, J. [University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25, SI-1000 Ljubljana (Slovenia); Sanchez, G. [Universidad Politecnica de Valencia, I.U.I. Centro de Tecnologia Nanofotonica, 46022 Valencia (Spain); Leitner, K. [Umicore Thin Film Products AG, Balzers (Liechtenstein); Wang, Q. [Shanghai Jiaotong University, Research Institute of Micro/Nanometer Science and Technology, 800 Dongchuan Road, Min Hang, 200240 Shanghai (China)

    2011-09-15

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: (a) advanced light trapping by implementing nanotexturization through UV Nano Imprinting Lithography (UV-NIL); (b) growth of crack-free silicon absorber layers on highly textured substrates; (c) development of new TCOs which should combine the best properties of presently available materials like ITO and AZO. The paper presents the midterm status of the project results, showing model calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8% have been made, paving the way towards a-Si/{mu}c-Si tandem cells with more than 11% efficiency.

  12. Analysis on anomalous degradation in silicon solar cell designed for space use

    Energy Technology Data Exchange (ETDEWEB)

    Ohshima, Takeshi; Morita, Yousuke; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Kawasaki, Osamu; Hisamatsu, Tadashi; Yamamoto, Yasunari; Matsuda, Sumio; Nakao, Tetsuya; Wakow, Yoshihito

    1997-03-01

    Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)

  13. Back surface cell structures for reducing recombination in CZ silicon solar cells

    Science.gov (United States)

    King, R. R.; Mitchell, K. W.; Gee, J. M.

    1994-12-01

    Mass-produced terrestrial CZ silicon solar cells are currently entering the domain in which bulk diffusion length is comparable to the cell thickness, so that recombination at the back surface can have a significant effect on device performance. Three manufacturable processes that address the problem of back recombination are examined here: boron diffusion from a deposited doped SiO2, layer; Al-alloyed layers using screen-printed paste; and use of a collecting n* layer on the back interdigitated with the positive electrode. 104 sq cm cells fabricated at Siemens Solar Industries using these back surface structures are characterized by current-voltage, spectral response, photoconductivity decay, and SIMS measurements.

  14. Preparation of silver-coated glass frit and its application in silicon solar cells

    Science.gov (United States)

    Feng, Xiang; Biyuan, Li; Yingfen, Li; Jian, Zhou; Weiping, Gan

    2016-07-01

    A simple electroless plating process was employed to prepare silver-coated glass frits for solar cells. The surface of the glass frits was modified with polyvinyl-pyrrolidone (PVP) before the electroless plating process. Infrared (IR) spectroscopy, field emission scanning electron microscopy (FESEM), and x-ray diffraction (XRD) were used to characterize the PVP modified glass frits and investigate the mechanism of the modification process. It was found that the PVP molecules adsorbed on the glass frit surface and reduced the silver ions to the silver nanoparticles. Through epitaxial growth, these nanoparticles were uniformly deposited onto the surface of the glass frit. Silicon solar cells with this novel silver coating exhibited a photoelectric conversion efficiency increase of 0.33%. Compared with the electroless plating processes, this method provides a simple route to prepare silver-coated glass frits without introducing impurity ions.

  15. Preparation of silver-coated glass frit and its application in silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    向锋; 李碧渊; 黎应芬; 周健; 甘卫平

    2016-01-01

    A simple electroless plating process was employed to prepare silver-coated glass frits for solar cells. The surface of the glass frits was modified with polyvinyl-pyrrolidone (PVP) before the electroless plating process. Infrared (IR) spectroscopy, field emission scanning electron microscopy (FESEM), and x-ray diffraction (XRD) were used to characterize the PVP modified glass frits and investigate the mechanism of the modification process. It was found that the PVP molecules adsorbed on the glass frit surface and reduced the silver ions to the silver nanoparticles. Through epitaxial growth, these nanoparticles were uniformly deposited onto the surface of the glass frit. Silicon solar cells with this novel silver coating exhibited a photoelectric conversion efficiency increase of 0.33%. Compared with the electroless plating processes, this method provides a simple route to prepare silver-coated glass frits without introducing impurity ions.

  16. Effect of junction depth on the performance of a diffused n+p silicon solar cell

    Science.gov (United States)

    Caleb Dhanasekaran, P.; Gopalam, B. S. V.

    1981-12-01

    A detailed numerical analysis of the influence of the junction depth on the performance of a diffused n+p silicon solar cell is presented. The analysis includes the effects of Fermi-Dirac statistics, band gap narrowing, a finite surface recombination velocity and the built-in field due to the impurity profile. The recombination mechanism plays a dominant role in the performance of the solar cell. The ideality factor, " a", varies from 1.006 for 0.1 μm junction depth, to 1.0135 for 2 μm junction depth. The saturation current density, Jo increases with the junction depth showing that the recombination increases in the heavily doped diffused layer of the device. The variation of the light generated current, JL, the open-circuit voltage, Voc, efficiency, η and the ideality factor, " a" are reported and analysed.

  17. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-06-21

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  18. Summary of the 4th Workshop on Metallization for Crystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Beaucarne, G. [Dow Corning, Parc Industriel, Zone C, Rue Jules Bordet, 7180 Seneffe (Belgium); Schubert, G. [Sunways AG, Macairestrasse 3 - 5, D - 78467 Konstanz (Germany); Hoornstra, J. [Energy research Centre of the Netherlands ECN, POBox 1, 1755 ZG Petten (Netherlands)

    2013-07-01

    The 4th Metallization Workshop held in May 2013 in Constance, Germany, enabled experts in metallization for crystalline silicon solar cells to obtain a clear view on the status of the technology, as well as to exchange and generate new ideas and insights. From the contributions on the workshop, it was clear that the traditional metallization technique of screenprinting Ag paste has been improved in a dramatic way over the last two years, accelerating the decrease of Ag consumption per cell while improving solar cell efficiency. This was achieved through enhanced understanding of screenprinted contacts, improving Ag pastes and evolutionary modifications to the screenprinting technique. Alternatives to screenprinting, including electroplating of Ni and Cu contacts, also continue to progress, though not quite at the same impressive rate of improvement as Ag printing.

  19. Minimization of the effect of the collecting grid in a solar cell based silicon

    Energy Technology Data Exchange (ETDEWEB)

    Cheknane, A.; Benyoucef, B. [Laboratoire des Materiaux et Energies Renouvelables, Tlemcen (Algeria); Charles, J.-P. [MOPS, SUPELEC, Metz (France); Zerdoum, R. [Riyadh College of Technology, Riyadh (Saudi Arabia); Trari, M. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables, Alger (Algeria)

    2005-05-01

    The solar cells collecting grids present a serious problem and more particularly under solar concentration. Our contribution in this article is to seek the best compromise between shadow effect and series resistance effect. The cell considered here is of Si (silicon) type, n{sup +}p with circular geometry (radius {alpha} = 4.9cm), a silver metallization ({rho}M = 1.6 x 10{sup -6} {omega}cm), and a contact resistivity of {rho}C = 10{sup -5} {omega}cm. Our calculations are made under the condition of AM1.5 with 1 sun concentration. The various power losses caused by this grid are: losses due to the grid shadow, losses in grain boundaries due to the metal/semiconductor contact, power dissipated in the resistance of layer between bars, and losses in the grid metallization. (author)

  20. Uncertainties about the physical electronics of n(+) and p(+) silicon, with applications for solar cells

    Science.gov (United States)

    Lindholm, F. A.

    1984-01-01

    After brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.

  1. Progress of Silicon Solar Cell%硅半导体太阳能电池进展

    Institute of Scientific and Technical Information of China (English)

    李怀辉; 王小平; 王丽军; 刘欣欣; 梅翠玉; 刘仁杰; 江振兴; 赵凯麟

    2011-01-01

    The solar cell is a device converting solar energy directly into electrical energy, also is an effective way to use solar energy. As a kind of green energy, especially in nuclear security problems facing challenges today, solar cells are thought to be the best choice to solve the energy failure and environmental pollution and so oa At present, many countries are drafting long-term solar development plan,and prepare to develop large-scale solar energy in the 21st century. Silicon solar cells (such as monocrystalline silicon, polycrystalline silicon, amorphous silicon, etc. ) are widely used. Through comparing and discussing all kinds of silicon solar battery performance, technology, the efficiency of conversion from aspects and preparation methods and their properties of the advantages and disadvantages, various silicon solar cell research present situation and the latest progress are reviewed. Finally, the silicon solar battery research and production prospects and trends are discussed.%太阳能电池是将太阳能直接转化为电能的装置,也是有效利用太阳能最佳途径之一.作为一种绿色能源,尤其是在核电安全问题面临挑战的今天,太阳能电池被认为是解决能源衰竭和环境污染等一系列重大问题的最佳选择.目前,许多国家正在制订中长期太阳能开发计划,准备在21世纪大规模开发太阳能.当前研究最多同时在生产应用的最广泛的当数硅太阳能电池(如单晶硅、多晶硅、非晶硅等).通过对各类硅太阳能电池的性能、工艺、转化效率以及制备方法等方面作比较并讨论了它们各自性能的优劣,最后结合当前国内外工业化生产状况,对硅太阳能电池研究现状和各自的最新进展作了比较详细的综述,并简要讨论了硅太阳能电池研究和生产上的前景及趋势.

  2. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    Science.gov (United States)

    Kang, Jin Sung

    Inkjet printing of electrode using copper nanoparticle ink is presented. Electrode was printed on a flexible glass epoxy composite substrate using drop on demand piezoelectric dispenser and was sintered at 200°C in N 2 gas condition. The printed electrodes were made with various widths and thicknesses. Surface morphology of electrode was analyzed using scanning electron microscope (SEM) and atomic force microscope (AFM). Reliable dimensions for printed electronics were found from this study. Single-crystalline silicon solar cells were tested under four-point bending to find the feasibility of directly integrating them onto a carbon fiber/epoxy composite laminate. These solar cells were not able to withstand 0.2% strain. On the other hand, thin-film amorphous silicon solar cells were subjected to flexural fatigue loadings. The current density-voltage curves were analyzed at different cycles, and there was no noticeable degradation on its performance up to 100 cycles. A multifunctional composite laminate which can harvest and store solar energy was fabricated using printed electrodes. The integrated printed circuit board (PCB) was co-cured with a carbon/epoxy composite laminate by the vacuum bag molding process in an autoclave; an amorphous silicon solar cell and a thin-film solid state lithium-ion (Li-ion) battery were adhesively joined and electrically connected to a thin flexible PCB; and then the passive components such as resistors and diodes were electrically connected to the printed circuit board by silver pasting. Since a thin-film solid state Li-ion battery was not able to withstand tensile strain above 0.4%, thin Li-ion polymer batteries were tested under various mechanical loadings and environmental conditions to find the feasibility of using the polymer batteries for our multifunctional purpose. It was found that the Li-ion polymer batteries were stable under pressure and tensile loading without any noticeable degradation on its charge and discharge

  3. Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

    Science.gov (United States)

    Weingarten, Martin; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

    2016-04-01

    In the last years, hybrid organic/silicon solar cells have attracted great interest in photovoltaic research due to their potential to become a low-cost alternative for the conventionally used silicon pn-junction solar cells. This work is focused on hybrid solar cells based on the polymer poly(3-hexylthiophene-2,5-diyl), which was deposited on n-doped crystalline silicon via spin-coating under ambient conditions. By employing an anisotropic etching step with potassium hydroxide (KOH), the reflection losses at the silicon surface were reduced. Hereby, the short-circuit current density of the hybrid devices was increased by 31%, leading to a maximum power conversion efficiency (PCE) of 13.1% compared to a PCE of 10.7% for the devices without KOH etching. In addition, the contacts were improved by replacing gold with the more conductive silver as top grid material to reduce the contact resistance and by introducing a thin (˜0.5 nm) lithium fluoride layer between the silicon and the aluminum backside contact to improve electron collection and hole blocking. Hereby, the open-circuit voltage and the fill factor of the hybrid solar cells were further improved and devices with very high PCE up to 14.2% have been realized.

  4. Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

    1980-01-01

    Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

  5. Solar thermoelectric generators fabricated on a silicon-on-insulator substrate

    Science.gov (United States)

    de Leon, Maria Theresa; Chong, Harold; Kraft, Michael

    2014-08-01

    Solar thermal power generation is an attractive electricity generation technology as it is environment-friendly, has the potential for increased efficiency, and has high reliability. The design, modelling, and evaluation of solar thermoelectric generators (STEGs) fabricated on a silicon-on-insulator substrate are presented in this paper. Solar concentration is achieved by using a focusing lens to concentrate solar input onto the membrane of the STEG. A thermal model is developed based on energy balance and heat transfer equations using lumped thermal conductances. This thermal model is shown to be in good agreement with actual measurement results. For a 1 W laser input with a spot size of 1 mm, a maximum open-circuit voltage of 3.06 V is obtained, which translates to a temperature difference of 226 °C across the thermoelements and delivers 25 µW of output power under matched load conditions. Based on solar simulator measurements, a maximum TEG voltage of 803 mV was achieved by using a 50.8 mm diameter plano-convex lens to focus solar input to a TEG with a length of 1000 µm, width of 15 µm, membrane diameter of 3 mm, and 114 thermocouples. This translates to a temperature difference of 18 °C across the thermoelements and an output power under matched load conditions of 431 nW. This paper demonstrates that by utilizing a solar concentrator to focus solar radiation onto the hot junction of a TEG, the temperature difference across the device is increased; subsequently improving the TEG’s efficiency. By using materials that are compatible with standard CMOS and MEMS processes, integration of solar-driven TEGs with on-chip electronics is seen to be a viable way of solar energy harvesting where the resulting microscale system is envisioned to have promising applications in on-board power sources, sensor networks, and autonomous microsystems.

  6. Advanced Front-Side Technology in Crystalline Silicon Solar Cells (Geavanceerde Frontend-Side Technolgy in kristallijn silicium zonnecellen)

    OpenAIRE

    2013-01-01

    The goal of this thesis is to improve the efficiency of silicon solar cells such that the cost/watt could be reduced to a competitive level. In this thesis, three aspects of the front-side of crystalline silicon solar cells have been investigated. Advanced texturing, emitter formation and passivation are detailed in chapters 2, 3 and 4 respectively. Below, each chapter is summarized. In chapter 2, a new technique has been developed that textures the frontside while polishing the rear-side. Th...

  7. Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell

    CERN Document Server

    Xu, Zhida

    2014-01-01

    High density and uniformity sub-100nm surface oxidized silicon nanocone forest structure is created and integrated onto the existing texturization microstructures on photovoltaic device surface by a one-step high throughput plasma enhanced texturization method. We suppressed the broadband optical reflection on chemically textured grade-B silicon solar cells for up to 70.25% through this nanomanufacturing method. The performance of the solar cell is improved with the short circuit current increased by 7.1%, fill factor increased by 7.0%, conversion efficiency increased by 14.66%. Our method demonstrates the potential to improve the photovoltaic device performance with low cost high and throughput nanomanufacturing technology.

  8. Develop silicone encapsulation systems for terrestrial silicon solar arrays. Fifth quarterly progress report, April 1-June 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-07-01

    This study is directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicone based materials. Progress is reported under the headings (1) Weather-Ometer stressing vs weathering history of silicone and silicone modified materials, (2) thermal cycling stress test results, (3) dirt pickup and retention measured by outdoor exposure, (4) silicone-acrylic copolymers as encapsulants, and (5) cover films containing uv absorbers. (WHK)

  9. Development of Screen-Printed Texture-Barrier Paste for Single-Side Texturization of Interdigitated Back-Contact Silicon Solar Cell Applications

    OpenAIRE

    Chi-Cheng Chen; Chin-Lung Cheng; Thou-Jen Whang; Yu-Shun Chiu

    2013-01-01

    Continuous cost reduction of silicon-based solar cells is needed to lower the process time and increase efficiency. To achieve lower costs, screen-printed texture-barrier (SPTB) paste was first developed for single-side texturization (ST) of the interdigitated back-contact (IBC) for silicon-based solar cell applications. The SPTB paste was screen-printed on silicon substrates. The SPTB paste was synthesized from intermixed silicate glass (75 wt %), a resin binder (ethyl cellulose ethoce: 20 w...

  10. Effects of seed layer on the performance of microcrystalline silicon germanium solar cells

    Institute of Scientific and Technical Information of China (English)

    Cao Yu; Zhang Jianjun; Li Tianwei; Huang Zhenhua; Ma Jun; Yang Xu; Ni Jian

    2013-01-01

    Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth of μc-Si 1-x Gex:H i-layers and the performance of μc-Si1-x Gex:H p-in single junction solar cells are investigated.By applying this seeding method,the μc-Si 1-xGex:H solar cell shows a significant improvement in short circuit current density (Jsc) and fill factor (FF) with an acceptable performance of blue response as a μc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05% is achieved for the μc-Sio.7Ge0.3:H solar cell.

  11. Carrier collection losses in interface passivated amorphous silicon thin-film solar cells

    Science.gov (United States)

    Neumüller, A.; Bereznev, S.; Ewert, M.; Volobujeva, O.; Sergeev, O.; Falta, J.; Vehse, M.; Agert, C.

    2016-07-01

    In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatment at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.

  12. Field collapse due to band-tail charge in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States); Schiff, E.A. [Syracuse Univ., NY (United States)

    1996-05-01

    It is common for the fill factor to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light changes much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, the authors measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.

  13. p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation

    Directory of Open Access Journals (Sweden)

    Chien-Ming Lee

    2013-01-01

    Full Text Available The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ and float-zone (FZ material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG and the junction isolation process that is required after the conventional thermal POCl3 diffusion process. Moreover, the good passivation performance of the ion implantation process improves Voc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl3 diffusion process.

  14. Film properties of alumina passivation layer for silicon solar cells prepared by spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Ryosuke, E-mail: rwatanabe@st.seikei.ac.jp; Kawashima, Mizuho; Saito, Yoji

    2015-09-01

    We prepared alumina passivation films deposited by a sol-gel wet process for silicon substrates. Aluminum acetylacetonate was used as a precursor, and the solution was spin-coated onto silicon substrates. Calcination temperature dependence of the passivation quality of the films was evaluated mainly by measuring effective lifetime using a photo conductance decay technique and capacitance–voltage measurements. Also, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy were carried out to evaluate film properties. A large amount of negative fixed charge density (Q{sub f} = − 3.1 × 10{sup 12} cm{sup −2}) exists in the films calcined at 300 °C. On the other hand, a long effective lifetime of 400 μs was obtained for the sample calcined at 600 °C, and the passivation films had a large amount of positive fixed charge density (Q{sub f} = 3.6 × 10{sup 12} cm{sup −2}) with a low interface state density. - Highlights: • Alumina passivation films for silicon solar cells were prepared by spin-coating. • Electronic properties and the quality of passivation films were investigated. • Carrier lifetime was enhanced for the samples that were calcined above 400 °C. • The films calcined at 300 °C have high amount of negative fixed charge.

  15. Interdigitated back contact silicon solar cell analysis and design recommendations for space use

    Science.gov (United States)

    Marvin, Dean C.; Froedge, Sharon L.

    1989-09-01

    The Interdigitated Back Contact (IBC) solar cell is a relatively new design which has shown unprecedentedly high efficiencies. Silicon Interdigitated Back Contact cells have been fabricated that show greater than 25 percent efficiency at 100 suns Air Mass 1.5. This is far superior to conventional silicon concentrator cells which are approximately 18 percent efficient. The purpose of this report is to describe briefly the differences between this technology and conventional cells, demonstrate a near optimum design achieved by two-dimensional numerical simulation, and assess the utility of these cells for space application. The end of life (EOL) performance of this cell design in the radiation environment of space is a critical issue since the high efficiency of the design is predicated on the use of very high quality, long-diffusion length silicon. The radiation-induced degradation of this material is expected to lead to severe efficiency losses. The optimization of cell design to minimize these losses was carried out using a modified version of the two-dimensional PISCES semiconductor simulator. The final designs presented here show that the performance of IBC cells in space can significantly exceed that of conventional cells.

  16. Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

    Science.gov (United States)

    Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

    2017-02-01

    Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

  17. Ultra-low reflection porous silicon nanowires for solar cell applications

    KAUST Repository

    Najar, Adel

    2012-01-01

    High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. ©2012 Optical Society of America.

  18. Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.; Iwaniczko, E.; Page, M.; Branz, H.; Wang, T.

    2006-05-01

    We use in-situ and ex-situ spectroscopic ellipsometry to characterize the optical, electronic, and structural properties of individual layers and completed silicon heterojunction devices. The combination of in-situ measurements during thin film deposition with ex-situ measurements of completed devices allows us to understand both the growth dynamics of the materials and the effects of each processing step on material properties. In-situ ellipsometry measurements enable us to map out how the optical properties change with deposition conditions, pointing the way towards reducing the absorption loss and increasing device efficiency. We use the measured optical properties and thickness of the i-, n-, and p-layers in optical device modeling to determine how the material properties affect device performance. Our best solar energy conversion efficiencies are 16.9% for a non-textured, single-sided device with an aluminum back surface field contact on a p-type float zone silicon wafer, and 17.8% for a textured double-sided device on a p-type float zone silicon wafer.

  19. Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Schuettauf, J.W.A.; Van der Werf, C.H.M.; Kielen, I.M.; Van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics, Physics of Devices, Princetonplein 5, 3584 CC Utrecht (Netherlands)

    2012-09-15

    The influence of thermal annealing on the crystalline silicon surface passivating properties of selected amorphous silicon containing layer stacks (including intrinsic and doped films), as well as the correlation with silicon heterojunction solar cell performance has been investigated. All samples have been isochronally annealed for 1 h in an N{sub 2} ambient at temperatures between 150C and 300C in incremental steps of 15C. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation quality is observed up to 255C and 270C, respectively, and a deterioration at higher temperatures. For intrinsic/n-type a-Si:H layer stacks, a maximum minority carrier lifetime of 13.3 ms at an injection level of 10{sup 15} cm{sup -3} has been measured. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed upon annealing over the whole temperature range. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is inferred that the intrinsic/p-layer stack is limiting device performance. Furthermore, thermal annealing of p-type layers should be avoided entirely. We therefore propose an adapted processing sequence, leading to a substantial improvement in efficiency to 16.7%, well above the efficiency of 15.8% obtained with the 'standard' processing sequence.

  20. The Emitter Having Microcrystalline Surface in Silicon Heterojunction Interdigitated Back Contact Solar Cells

    Science.gov (United States)

    Ji, Kwang-sun; Syn, Hojung; Choi, Junghoon; Lee, Heon-Min; Kim, Donghwan

    2012-10-01

    In producing the Si heterojunction interdigitated backcontact solar cells, we investigated the feasibility of applying amorphous Si emitter having considerable crystalline Si phase at the facing to transparent conducting oxide (TCO) layer. Prior to evaluating electrical property, we characterized material nature of hydrogenated microcrystalline p-type silicon (µc-p-Si:H) as crystallized fraction, surface morphology, bonding kinds in thin films and then surface passivation quality finally. The diode and interface contact characteristics were induced by the simple test device and then current-voltage (I-V) curve showed more linearity in µc/hydrogenated amorphous silicon (a-Si:H) emitter case. We fabricated heterojunction back contact (HBC) solar cells using p/n interdigitated structure and acquired the 23.4% efficiency in cell size with performance parameters as open-circuit voltage (Voc) 723 mV, short-circuit current density (Jsc) 41.8 mA/cm2, fill factor (FF) 0.774, in the cell size (at 2×2 cm2).