WorldWideScience

Sample records for benign silicon solar

  1. Environmentally benign silicon solar cell manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

    1998-09-01

    The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

  2. Elite silicon and solar power

    International Nuclear Information System (INIS)

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production

  3. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to ""fill in the blanks"" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the curre

  4. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  5. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  6. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  7. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  8. Silicon Carbide Solar Cells Investigated

    Science.gov (United States)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  9. Screen Printed Metallization of Silicon Solar Cells

    OpenAIRE

    Govaerts, R.; Van Overstraeten, R.; Mertens, R.; Ph. Lauwers; Frisson, L.

    1980-01-01

    This paper presents a screen printing process for the metallization of silicon solar cells. The physics and construction of a classical solar cell are reviewed. The results obtained with a screen printing process are comparable with other, more expensive technologies. This technology does not introduce an additional contact resistance on silicon. The process optimization and the influence of different parameters are discussed.

  10. Towards upconversion for amorphous silicon solar cells

    NARCIS (Netherlands)

    de Wild, J.; Meijerink, A.; Rath, J.K.; van Sark, W.G.J.H.M.; Schropp, R.E.I.

    2010-01-01

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in com

  11. Nanocrystalline silicon based thin film solar cells

    Science.gov (United States)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  12. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  13. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  14. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  15. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  16. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  17. Microcrystalline silicon and micromorph tandem solar cells

    OpenAIRE

    Keppner, H.; Meier, Johannes; Torres, P.; Fischer, D.; Shah, A.

    2008-01-01

    “Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is t...

  18. Black Silicon Solar Cells with Black Ribbons

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io;

    2016-01-01

    We present the combination of mask-less reactive ion etch (RIE) texturing and blackened interconnecting ribbons as a method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon made by mask-less reactive ion etching has total, average...... in the range 15.7-16.3%. The KOH-textured reference cell had an efficiency of 17.9%. The combination of black Si and black interconnecting ribbons may result in aesthetic, all-black panels based on conventional, front-contacted silicon solar cells....... reflectance below 0.5% across a 156x156 mm2 silicon (Si) wafer. Black interconnecting ribbons were realized by oxidizing copper resulting in reflectance below 3% in the visible wavelength range. Screen-printed Si solar cells were realized on 156x156 mm2 black Si substrates with resulting efficiencies...

  19. Microcrystalline silicon and micromorph tandem solar cells

    Science.gov (United States)

    Keppner, H.; Meier, J.; Torres, P.; Fischer, D.; Shah, A.

    ``Micromorph'' tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. According to our present physical understanding microcrystalline silicon can be considered to be much more complex and very different from an ideal isotropic semiconductor. So far, stabilized efficiencies of about 12% (10.7% independently confirmed) could be obtained with micromorph solar cells. The scope of this paper is to emphasize two aspects: the first one is the complexity and the variety of microcrystalline silicon. The second aspect is to point out that the deposition parameter space is very large and mainly unexploited. Nevertheless, the results obtained are very encouraging and confirm that the micromorph concept has the potential to come close to the required performance criteria concerning price and efficiency.

  20. Microcrystalline silicon and micromorph tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Keppner, H. [Univ. of Appl. Sci., Le Locle (Switzerland); Meier, J.; Torres, P.; Fischer, D.; Shah, A. [Institute of Microtechnology, University of Neuchatel, A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland)

    1999-08-01

    ``Micromorph`` tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchatel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. According to our present physical understanding microcrystalline silicon can be considered to be much more complex and very different from an ideal isotropic semiconductor. So far, stabilized efficiencies of about 12% (10.7% independently confirmed) could be obtained with micromorph solar cells. The scope of this paper is to emphasize two aspects: the first one is the complexity and the variety of microcrystalline silicon. The second aspect is to point out that the deposition parameter space is very large and mainly unexploited. Nevertheless, the results obtained are very encouraging and confirm that the micromorph concept has the potential to come close to the required performance criteria concerning price and efficiency. (orig.) With 13 figs., 2 tabs., 62 refs.

  1. Towards upconversion for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    de Wild, J.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Meijerink, A. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Condensed Matter and Interfaces, P.O. Box 80000, 3508 TA Utrecht (Netherlands); van Sark, W.G.J.H.M. [Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands)

    2010-11-15

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter {beta}-NaYF{sub 4}:Yb{sup 3+}(18%) Er{sup 3+}(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 {mu}A/cm{sup 2} was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (author)

  2. Three-Terminal Amorphous Silicon Solar Cells

    OpenAIRE

    Cheng-Hung Tai; Chu-Hsuan Lin; Chih-Ming Wang; Chun-Chieh Lin

    2011-01-01

    Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si...

  3. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  4. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    OpenAIRE

    Walder Cordula; Kellermann Martin; Wendler Elke; Rensberg Jura; von Maydell Karsten; Agert Carsten

    2015-01-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or ...

  5. Light management in thin-film silicon solar cells

    OpenAIRE

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved with silicon-based solar cells. To stay competitive with bulk crystalline silicon and other thin-film solar cell technologies, thin-film silicon solar cells have to achieve a conversion efficiency l...

  6. Silicon Purification by a New Type of Solar Furnace

    Institute of Scientific and Technical Information of China (English)

    CHEN Ying-Tian; LIM Chern-Sing; HO Tso-Hsiu; LIM Boon-Han; WANG Yi-Nan

    2009-01-01

    We propose a new method to reveal a direct transformation from solar energy to solar electricity. Instead of using electricity in the process, we use concentrated solar rays with a crucibleless process to upgrade metallurgical silicon into solar-grade silicon feedstock.

  7. Optical models for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, T.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

    1995-08-01

    Light trapping is an important design feature for high-efficiency silicon solar cells. Because light trapping can considerably enhance optical absorption, a thinner substrate can be used which, in turn, can lower the bulk carrier recombination and concommitantly increase open-circuit voltage, and fill factor of the cell. The basic concepts of light trapping are similar to that of excitation of an optical waveguide, where a prism or a grating structure increases the phase velocity of the incoming optical wave such that waves propagated within the waveguide are totally reflected at the interfaces. Unfortunately, these concepts break down because the entire solar cell is covered with such a structure, making it necessary to develop new analytical approaches to deal with incomplete light trapping in solar cells. This paper describes two models that analyze light trapping in thick and thin solar cells.

  8. Thin-film silicon solar cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A.V.; Meier, J.; Kroll, U.; Droz, C.; Bailat, J. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Schade, H. [RWE Schott Solar GmbH, Putzbrunn (Germany); Vanecek, M. [Academy of Sciences, Prague (Czech Republic). Inst. of Physics; Vallat Sauvain, E.; Wyrsch, N. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Unaxis SPTec S A, Neuchatel (Switzerland)

    2004-07-01

    This paper describes the use, within p-i-n- and n-i-p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon ({mu}c-Si:H) thin films (layers), both deposited at low temperatures (200{sup o}C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p-i-n-type solar cells, as fabricated so far, are compared in their key parameters (J{sub sc},FF,V{sub oc}) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the {mu}c-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of

  9. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

    OpenAIRE

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; KONAGAI, MAKOTO

    2014-01-01

    The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is po...

  10. A Cost Roadmap for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

    2016-01-01

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  11. Low cost silicon-on-ceramic photovoltaic solar cells

    Science.gov (United States)

    Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

    1980-01-01

    A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

  12. Advances in solar silicon production

    International Nuclear Information System (INIS)

    The results of carbothermic reduction experiments carried out at a preindustrial scale with a 240 KVA submerged are furnace fed with pellets of carbon black and silica sand are reported and discussed. It was demonstrated that all powder agglomeration techniques used to fabricate the pellets (pellettizing, briquetting, extrusion) give rise to small or negligible contamination of the charge. The results of experiments support the view that furnace handling is a powerful source of impurity contamination. Contamination from furnace lining could be however controlled and rendered negligible by an improved furnace design and proper choice of refractory materials. Graphite or graphite coated tools could eventually improve also the furnace tapping and handling operations. The solution of these problems, which is in substantial progress in this case, presents however additional problems in the case of larger size furnace and presumibly will limit the size of furnaces for PMS production to 500-1000 KVA. As the authors demonstrated that the boron and phosphorous is not influenced by furnace operation, one can conclude that the use of the granulated lump quartz of higher purity quartz sands could reconduct our PMS within the specifications of a solar grade material

  13. Various configurations for continuous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sameh, M.

    1977-10-01

    For the same exposed silicon area, solar cells may be produced in a more convenient and mechanically rugged structure than narrow thin ribbons or sheets. Compactness ratio is calculated for each of several suggested geometries. For an Archimedes and square spirals, compactness ratio increases with increasing number of turns and closer tolerance. For a serpent, compactness ratio increases with decreasing number of turns, closer tolerance and increasing ratio of ribbon width to side length. For a zigzag compactness ratio is minimum for an apex angle 45/sup 0/ and smaller ratio of ribbon width to side length.

  14. Impurities in silicon and their impact on solar cell performance

    NARCIS (Netherlands)

    Coletti, Gianluca

    2011-01-01

    Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting sol

  15. Light management in thin-film silicon solar cells

    NARCIS (Netherlands)

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved

  16. Electrical Characterization of Amorphous Silicon Nitride Passivation Layers for Crystalline Silicon Solar Cells

    OpenAIRE

    Helland, Susanne

    2011-01-01

    High quality surface passivation is important for the reduction of recombination losses in solar cells. In this work, the passivation properties of amorphous hydrogenated silicon nitride for crystalline silicon solar cells were investigated, using electrical characterization, lifetime measurements and spectroscopic ellipsometry. Thin films of varying composition were deposited on p-type monocrystalline silicon wafers by plasma enhanced chemical vapor deposition (PECVD). Highest quality surfac...

  17. Monocrystalline silicon solar cells applied in photovoltaic system

    OpenAIRE

    L.A. Dobrzański; A. Drygała; M. Giedroć; Macek, M

    2012-01-01

    Purpose: The aim of the paper is to fabricate the monocrystalline silicon solar cells using the conventional technology by means of screen printing process and to make of them photovoltaic system.Design/methodology/approach: The investigation of current – voltage characteristic to determinate basic electrical properties of monocrystalline silicon solar cells were investigated under Standard Test Condition. Photovoltaic module was produced from solar cells with the largest short-circuit curren...

  18. Silicon nanostructures for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Gourbilleau, F. [CIMAP, UMR CNRS/CEA/Ensicaen 6252, 6 Bd Marechal Juin, 14050 Caen Cedex (France)], E-mail: fabrice.gourbilleau@ensicaen.fr; Dufour, C. [CIMAP, UMR CNRS/CEA/Ensicaen 6252, 6 Bd Marechal Juin, 14050 Caen Cedex (France); Rezgui, B.; Bremond, G. [INL, UMR CNRS 5270, Universite de Lyon, INSA-Lyon, Bat. Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex (France)

    2009-03-15

    Among the numerous applications of Si nanostructures in the microelectronic or photonic domains, one which could be promising concerns the use of such structures as the active layer in pin solar cells. By taking advantage of the quantum confinement of the carriers in Si nanograins whose size is lower than 8 nm, it is expected to improve the solar cell efficiency by increasing the absorption range of the solar spectrum. In this work, we report the fabrication, microstructural and optical properties of Si-rich silicon oxide (SRSO) composite layers and SRSO/SiO{sub 2} multilayers fabricated by reactive magnetron sputtering process. This process allows monitoring either the Si nanograins size and/or the Si nanograin density through specific deposition parameters such as the hydrogen rate in the plasma, the substrate temperature, the annealing treatment. Their effects on the photoluminescent properties as well as on the absorption coefficient are discussed. The SRSO/SiO{sub 2} multilayers absorption is higher with respect to the SRSO composite layer. Such behaviour has been attributed to a better control of the Si nanograin size.

  19. Black metallurgical silicon for solar energy conversion

    International Nuclear Information System (INIS)

    Metal impurities are known to create deep traps in the silicon (Si) bandgap, significantly reducing the minority carrier lifetime and consequently deteriorating the efficiency of a Si-based solar conversion system. Traditional purification methods via ‘Siemens’ and metallurgical routes involve complex and energy-intensive processes. Therefore, it is highly desirable to develop novel Si treatment technologies. With the radical evolution of nanotechnology in the past decades, new nano-approaches are offering opportunities to diminish the detrimental impacts of metal impurities or upgrade low quality Si in a cost-effective and energy-saving way. Here we review various recently developed dry and wet chemical etching methods including reactive ion etching, electrochemical etching, stain etching and metal assisted chemical etching. The current progress and the application prospects of those methods in nanostructure creation and Si upgrading are given and discussed in detail. (paper)

  20. Dendritic web silicon for solar cell application

    Science.gov (United States)

    Seidensticker, R. G.

    1977-01-01

    The dendritic web process for growing long thin ribbon crystals of silicon and other semiconductors is described. Growth is initiated from a thin wirelike dendrite seed which is brought into contact with the melt surface. Initially, the seed grows laterally to form a button at the melt surface; when the seed is withdrawn, needlelike dendrites propagate from each end of the button into the melt, and the web portion of the crystal is formed by the solidification of the liquid film supported by the button and the bounding dendrites. Apparatus used for dendritic web growth, material characteristics, and the two distinctly different mechanisms involved in the growth of a single crystal are examined. The performance of solar cells fabricated from dendritic web material is indistinguishable from the performance of cells fabricated from Czochralski grown material.

  1. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  2. Black silicon solar cells with black bus-bar strings

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io;

    2016-01-01

    We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by maskless reactive ion etching resulting in total, average reflectance...... below 0.5% across a 156x156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional allblack solar 9-cell panels. The black bus-bars (e.......g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency....

  3. Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

    OpenAIRE

    Seif, Johannes Peter; Descoeudres, Antoine; Filipic, Miha; Smole, Franc; Topic, Marko; Holman, Zachary Charles; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit volt...

  4. Alternative materials for crystalline silicon solar cells - Risks and implications

    OpenAIRE

    Kwapil, Wolfram

    2010-01-01

    This thesis considers the use of alternative silicon materials for photovoltaics – often termed “upgraded metallurgical grade” silicon – from different angles and evaluates the risks and implications for the wafer and solar cell properties at selected steps along the entire process chain.The properties of the alternative, upgraded metallurgical grade silicon materials analyzed in the course of this thesis were governed by the simultaneous presence of boron and phosphorus in high concentration...

  5. Application of crystalline silicon solar cells in photovoltaic modules

    OpenAIRE

    L.A. Dobrzański; A. Drygała; M. Giedroć

    2010-01-01

    Purpose: The aim of the paper is to determinate basic electrical properties of solar cells, made of them photovoltaic module and analysis of its main electrical parameters.Design/methodology/approach: In this study, several methods were used: current – voltage characteristic to determinate basic electrical properties of 36 monocrystalline silicon solar cells, soft soldering technique to bond solar cells . Photovoltaic module was produced from 31 solar cells with the largest short-circuit curr...

  6. Buried contact multijunction thin film silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Green, M. [Univ. of New South Wales, Sydney (Australia)

    1995-08-01

    In early 1994, the Center for Photovoltaic Devices and Systems announced the filing of patent applications on an improved silicon thin film photovoltaic module approach. With material costs estimated to be about 20 times lower than those in present silicon solar cell modules along with other production advantages, this technology appears likely to make low cost, high performance solar modules available for the first time. This paper describes steps involved in making a module and module performance.

  7. Optical Layers for Thin-film Silicon Solar Cells

    OpenAIRE

    Cuony, Peter

    2011-01-01

    In this work we develop and analyze optical layers for use in Micromorph solar cells, a tandem configuration with an amorphous silicon top cell and a microcrystalline silicon bottom cell. The morphology of the front electrode has a decisive role in maximizing the efficiency of a solar cell. To reach a better understanding of the requirements for the front electrode surface, we present a wide range of morphologies that can be obtained with as-grown rou...

  8. Microcrystalline silicon and the impact on micromorph tandem solar cells

    OpenAIRE

    Meier, Johannes; Dubail, S.; Golay, S.; Kroll, U.; Faÿ, Sylvie; Vallat-Sauvain, Evelyne; Feitknecht, Luc; Dubail, J.; Shah, Arvind

    2008-01-01

    Intrinsic microcrystalline silicon opens up new ways for silicon thin-film multi-junction solar cells, the most promising being the “micromorph” tandem concept. The microstructure of entirely microcrystalline p–i–n solar cells is investigated by transmission electron microscopy. By applying low pressure chemical vapor deposition ZnO as front TCO in p–i–n configurated micromorph tandems, a remarkable reduction of the microcrystalline bottom cell thickness is achieved. Micromorph tandem cells w...

  9. Laser texturization in technology of multicrystalline silicon solar cells

    OpenAIRE

    L.A. Dobrzański; A. Drygała

    2008-01-01

    Purpose: This paper presents technology of multicrystalline silicon solar cells with laser texturization step. The texturing of polycrystalline silicon surface using Nd:YAG laser makes it possible to increase absorption of the incident solar radiation. Moreover, the additional technological operation consisting in etching in 20% KOH solution at temperature of 80ºC introduced into technology of the photovoltaic cells manufactured from laser textured wafers allows for significant improvement in...

  10. Silicon solar cells with low-cost substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kotval, P.S.; Strock, H.B.

    1978-11-07

    Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost, high purity semiconductor grade silicon. The epitaxial type products have an n-on-p-on-p substrate configuration, while the diffusion-type products have pentavalent impurities diffused therein to form a p-n junction in the low cost silicon substrate. One embodiment employs a multigrained refined metallurgical silicon (RMS) prepared by precipitating essentially iron-free silicon platelets from a solution of metallurgical grade silicon in molten aluminum, melting said refined platelets, in contact with a silica slag and pulling silicon boules from a melt of said refined metallurgical silicon (RMS). By directionally solidifying the refined silicon--slag melt, a multigrained, directionally solidified refined metallurgical silicon (DS/RMS) is obtained, with boules being pulled from a melt thereof for use as said low-cost substrate. The DS/RMS may also be re-melted and directionally solidified a second time with the boules being pulled from said twice directionally solidified material being a desirable, low-cost, single crystal material suitable for use as said substrate for planar diode and solar cell applications.

  11. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced chemic

  12. Review. Industrial silicon wafer solar cells. Status and trends

    Energy Technology Data Exchange (ETDEWEB)

    Aberle, Armin G.; Boreland, Matthew B.; Hoex, Bram; Mueller, Thomas [National Univ. of Singapore (Singapore). Solar Energy Research Institute of Singapore (SERIS)

    2012-11-01

    Crystalline silicon solar cells dominate today's global photovoltaic (PV) market. This paper presents the status and trends of the most important industrial silicon wafer solar cells, ranging from standard p-type homojunction cells to heterojunction cells on n-type wafers. Owing to ongoing technological innovations such as improved surface passivation and the use of increasingly thinner wafers, the trend towards higher cell efficiencies and lower dollar/watt costs is expected to continue during the next 10 years, making silicon wafer based PV modules a moving target for any competing PV technology. (orig.)

  13. Surface texturing of multicrystalline silicon solar cells

    OpenAIRE

    L.A. Dobrzański; A. Drygała

    2008-01-01

    Purpose: The aim of the paper is to elaborate a laser method of texturization multicrystalline silicon. The main reason for taking up the research is that most conventional methods used for texturization of monocrystalline silicon are ineffective when applied for texturing multicrystalline silicon. This is related to random distribution of grains of different crystalographic orientations on the surface of multicrystalline silicon.Design/methodology/approach: The topography of laser ...

  14. Electrically active defects in solar grade multicrystalline silicon

    DEFF Research Database (Denmark)

    Dahl, Espen

    2013-01-01

    gettering techniques. It was found that a high density of dislocations provided centres for precipitation of metallic impurities in a substantial part of wafers based on commercially available silicon from the metallurgic route. These precipitates introduce a range of defect levels in the silicon band gap...... distribution of metallic point defects. In addition, it has been proven that introduction of sodium lead to significant recombination activity in silicon. The gettering potential of metallic impurities varied significantly based on the type of material. This is most likely related to the density of......Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...

  15. Light-Induced Degradation of Thin Film Silicon Solar Cells

    Science.gov (United States)

    Hamelmann, F. U.; Weicht, J. A.; Behrens, G.

    2016-02-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods.

  16. Flexible Protocrystalline Silicon Solar Cells with Amorphous Buffer Layer

    Science.gov (United States)

    Ishikawa, Yasuaki; Schubert, Markus B.

    2006-09-01

    A low deposition temperature of 110 °C is mandatory for directly growing amorphous-silicon-based solar cells on plastic foil. The optimum absorber material at this low temperature is protocrystalline, i.e., right at the transition between amorphous and crystalline silicon. Polyethylene terephtalate foil of 50 μm thickness form the substrate of our flexible p-i-n single-junction cells. We discuss three peculiar processing techniques for achieving the maximum photovoltaic conversion efficiency of flexible low-temperature solar cells. First, we employ an optimized microcrystalline silicon p-type window layer; second, we use protocrystalline silicon for the i-layer; third, we insert an undoped amorphous silicon buffer layer at the p/i interface. The best flexible cells attain power conversion efficiencies of up to 4.9%.

  17. Thin foil silicon solar cells with coplanar back contacts

    Science.gov (United States)

    Ho, F.; Iles, P. A.; Baraona, C. R.

    1981-01-01

    To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

  18. Microstructure and Mechanical Aspects of Multicrystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Popovich, V.A.

    2013-01-01

    Due to pressure from the photovoltaic industry to decrease the cost of solar cell production, there is a tendency to reduce the thickness of silicon wafers. Unfortunately, wafers contain defects created by the various processing steps involved in solar cell production, which significantly reduce the

  19. Photocurrent images of amorphous-silicon solar-cell modules

    Science.gov (United States)

    Kim, Q.; Shumka, A.; Trask, J.

    1985-01-01

    Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

  20. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  1. Solar Grade Silicon from Agricultural By-products

    Energy Technology Data Exchange (ETDEWEB)

    Richard M. Laine

    2012-08-20

    In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it

  2. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Cz-Silicon Produced from Solar-Grade and Recycled Materials. Part II: Investigating Performances of Solar Cell Produced from Solar-Grade Cz-Silicon

    Science.gov (United States)

    Zhang, Song; Øvrelid, Eivind Johannes; Di Sabtino, Marisa; Juel, Mari; Tranell, Gabriella

    2015-03-01

    This paper is the second of two, investigating the properties of P-type Cz-silicon materials and solar cells produced with recycled silicon and Elkem Solar Silicon (ESS) materials. While the focus on the first work was on the bulk properties and grown defects of the material, the current study focuses on the solar cell performances. In the processing of the solar cells, the phosphorous diffusion process was optimized to improve the bulk properties and thus to maximize the final solar cell characteristics. Results from the characterization of material defects suggest that the performances of the experimental ingots are limited by the activated grown-in defects, which should be strictly controlled during crystal growth and solar cell processing. The solar cells produced from the investigated ingots showed efficiency values up to 18.5 pct and fill factor values up to 79 pct, comparable to conventional silicon produced from poly silicon. Solar cells produced from mixed recycled and ESS material exhibit a better performance than 100 pct recycled material. Boron and oxygen concentration levels and net doping level showed a concurrent effect on light-induced degradation (LID). Appropriate compensation was finally demonstrated to be an efficient way to improve solar cells efficiency of Cz-silicon produced from recycled silicon, even though higher dopant concentration incurred relatively faster LID.

  4. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  5. Silver nanoparticles-coated glass frits for silicon solar cells

    Science.gov (United States)

    Li, Yingfen; Gan, Weiping; Li, Biyuan

    2016-04-01

    Silver nanoparticles-coated glass frit composite powders for silicon solar cells were prepared by electroless plating. Silver colloids were used as the activating agent of glass frits. The products were characterized by X-ray diffraction, scanning electron microscopy, and differential scanning calorimetry. The characterization results indicated that silver nanoparticles with the melting temperature of 838 °C were uniformly deposited on glass frit surface. The particle size of silver nanoparticles could be controlled by adjusting the [Ag(NH3)2]NO3 concentration. The as-prepared composite powders were applied in the front side metallization of silicon solar cells. Compared with those based on pure glass frits, the solar cells containing the composite powders had the denser silver electrodes and the better silver-silicon ohmic contacts. Furthermore, the photovoltaic performances of solar cells were improved after the electroless plating.

  6. Electrical properties mono- and polycrystalline silicon solar cells

    OpenAIRE

    L.A. Dobrzański; M. Szczęsna; M. Szindler; A. Drygała

    2013-01-01

    Purpose: The goal of this article was to compare the properties of mono- and polycrystalline silicon solar cells. It was based on measurements performed of current-voltage characteristics and calculated parameters using mathematical formulas. Design/methodology/approach: Light and dark current-voltage characteristics of solar cells were measured using a solar simulator PV Test Solutions company SS150AAA model. The measurements were performed under standard conditions (Pin =...

  7. Silicon space solar cells: progression and radiation-resistance analysis

    Science.gov (United States)

    Rehman, Atteq ur; Lee, Sang Hee; Lee, Soo Hong

    2016-02-01

    In this paper, an overview of the solar cell technology based on silicon for applications in space is presented. First, the space environment and its effects on the basis of satellite orbits, such as geostationary earth orbit (GEO) and low earth orbit (LEO), are described. The space solar cell technology based on silicon-based materials, including thin-film silicon solar cells, for use in space was appraised. The evolution of the design for silicon solar cell for use in space, such as a backsurface field (BSF), selective doping, and both-side passivation, etc., is illustrated. This paper also describes the nature of radiation-induced defects and the models proposed for understanding the output power degradation in silicon space solar cells. The phenomenon of an anomalous increase in the short-circuit current ( I sc) in the fluence irradiation range from 2 × 1016 cm-2 to 5 × 1016 cm-2 is also described explicitly from the view point of the various presented models.

  8. Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

    1979-01-01

    A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

  9. The performance of silicon solar cells operated in liquids

    International Nuclear Information System (INIS)

    Better performance can be achieved when the bare silicon solar cells are immersed into liquids for the enhanced heat removing. In this study, the performance of solar cells immersed in liquids was examined under simulated sunlight. To distinguish the effects of the liquid optic and electric properties on the solar cells, a comparison between immersion of the solar module and the bare solar cells was carried out. It was found that the optic properties of the liquids can cause minor efficiency changes on the solar cells, while the electric properties of the liquids, the molecular polarizable and ions, are responsible for the most of the changes. The bare solar cells immersed in the non-polar silicon oil have the best performance. The accelerated life tests were carried out at 150 deg. C high temperature and under 200 W/m2 ultraviolet light irradiation, respectively. It was found that the silicon oil has good stability. This study can give support on the cooling of the concentrated photovoltaic systems by immersing the solar cells in the liquids directly

  10. Solar cell fabricated on welded thin flexible silicon

    Directory of Open Access Journals (Sweden)

    Hessmann Maik Thomas

    2015-01-01

    Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

  11. Bulk fabrication and properties of solar grade silicon microwires

    Directory of Open Access Journals (Sweden)

    F. A. Martinsen

    2014-11-01

    Full Text Available We demonstrate a substrate-free novel route for fabrication of solar grade silicon microwires for photovoltaic applications. The microwires are fabricated from low purity starting material via a bulk molten-core fibre drawing method. In-situ segregation of impurities during the directional solidification of the fibres yields solar grade silicon cores (microwires where the concentration of electrically detrimental transition metals has been reduced between one and two orders of magnitude. The microwires show bulk minority carrier diffusion lengths measuring ∼40 μm, and mobilities comparable to those of single-crystal silicon. Microwires passivated with amorphous silicon yield diffusion lengths comparable to those in the bulk.

  12. Material and solar cell research in microcrystalline silicon

    OpenAIRE

    Shah, Arvind; Meier, Johannes; Vallat-Sauvain, Evelyne; Wyrsch, Nicolas; Kroll, U.; Droz, C.; U. Graf

    2008-01-01

    This contribution describes the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT Neuchâtel in connection with deposition of μc-Si:H layers by very high frequency glow discharge deposition is related in detail. Corresponding layer properties w.r.t. material microstructure, hydrogen content, stability and electronic transport are referred to. Basic properties of single-junction, entirely microcrystalli...

  13. DEVELOPMENT OF A FURNACE TO FABRICATE SILICON SOLAR CELLS

    Directory of Open Access Journals (Sweden)

    Sérgio Boscato Garcia

    2012-06-01

    Full Text Available Solar cell world market had an exponential growth in the last decade and nowadays it continues in expansion. To produce solar cells, dopants need to be introduced into the crystalline silicon wafer in order to form the pn junction. This process is carried out in diffusion furnaces. The aim of this paper is to present the development of a compact diffusion furnace to process up to 156 mm × 156 mm silicon wafers and to operate at temperature up to 1100°C. The furnace is automated and it is constituted by a heating system with three zones and systems to introduce the wafers inside the furnace as well as to control of gas flows. This equipment is the first one developed in Brazil to promote impurity diffusions in order to produce silicon solar cells and it was manufactured jointly with a Brazilian company.

  14. Black Silicon formation using dry etching for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Murias, D. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Reyes-Betanzo, C., E-mail: creyes@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Moreno, M.; Torres, A.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R.; Soriano, M. [Universidad Autonoma de Ciudad Juarez, Chihuahua (Mexico); Lucas, J. [Instituto Tecnologico de Tehuacan, Puebla (Mexico); Cabarrocas, P. Roca i [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, Palaiseau (France)

    2012-09-20

    A study on the formation of Black Silicon on crystalline silicon surface using SF{sub 6}/O{sub 2} and SF{sub 6}/O{sub 2}/CH{sub 4} based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  15. Laser annealing of thin film polycrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    Chowdhury A.

    2013-11-01

    Full Text Available Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.

  16. Indium tin oxide-silicon thin film solar cell

    International Nuclear Information System (INIS)

    Heterojunction solar cells consisting of amorphous indium tin oxide (ITO) thin films on silicon films have been fabricated and studied. The results show that the devices give a photovoltaic effect and rectifying characteristics. One of the main characteristics of amorphous ITO thin films is better transparency (>85%) over the complete useful window of the solar spectrum. The polarity observed is found to be consistent with V/sub oc/ = 0.34 volt, I/sub sc/ = 22mA/cm/sup 2/ and fill factor = 0.48. An attempt has been made to understand the conduction mechanism of indium tin oxide - silicon heterojunction

  17. Influence of porous silicon formation on the performance of multi-crystalline silicon solar cells

    Indian Academy of Sciences (India)

    M Saad; M Naddaf

    2015-06-01

    The effect of formation of porous silicon on the performance of multi-crystalline silicon (mc-Si) solar cells is presented. Surface treatment of mc-Si solar cells was performed by electrochemical etching in HF-based solution. The effect of etching is viewed through scanning electron microscope (SEM) photographs that indicated the formation of a porous layer on the surface. Total reflection spectroscopy measurements on solar cells revealed reduced reflection after etching. In order to demonstrate the effect of this porous layer on the solar cell performance, illumination-dependent – characteristics and spectral response measurements were performed and analysed before and after etching. At all illumination intensities, short-circuit current density and open-circuit voltage values for the etched solar cell were higher than those before etching, whereas fill factor values were lower for the etched cell at high illumination intensities. An interpretation of these findings is presented.

  18. Silicon Germanium Quantum Well Solar Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  19. A Microstrip Printed Dipole Solar Antenna Using Polycrystalline Silicon Solar Cells

    OpenAIRE

    Shynu, S.; Roo Ons, Maria; Ruvio, Giuseppe; Ammann, Max; MCCORMACK, SARAH; Norton, Brian

    2008-01-01

    A novel printed dipole solar antenna design with an integrated balun is proposed for the first time with high efficiency polycrystalline silicon solar cells is presented in this paper. The optimum orientation of the silver DC bus bars of the solar cell is determined in order to achieve best antenna performance. Good solar antenna performance similar to that of ordinary printed dipoles with PEC reflectors is achieved.

  20. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film sili

  1. Crystalline silicon solar cells with high resistivity emitter

    Science.gov (United States)

    Panek, P.; Drabczyk, K.; Zięba, P.

    2009-06-01

    The paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

  2. Inexpensive transparent nanoelectrode for crystalline silicon solar cells.

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-12-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost. PMID:27356559

  3. Crystalline silicon solar cells with micro/nano texture

    Science.gov (United States)

    Dimitrov, Dimitre Z.; Du, Chen-Hsun

    2013-02-01

    Crystalline silicon solar cells with two-scale texture consisting of random upright pyramids and surface nanotextured layer directly onto the pyramids are prepared and reflectance properties and I-V characteristics measured. Random pyramids texture is produced by etching in an alkaline solution. On top of the pyramids texture, a nanotexture is developed using an electroless oxidation/etching process. Solar cells with two-scale surface texturization are prepared following the standard screen-printing technology sequence. The micro/nano surface is found to lower considerably the light reflectance of silicon. The short wavelengths spectral response (blue response) improvement is observed in micro/nano textured solar cells compared to standard upright pyramids textured cells. An efficiency of 17.5% is measured for the best micro/nano textured c-Si solar cell. The efficiency improvement is found to be due to the gain in both Jsc and Voc.

  4. Inexpensive transparent nanoelectrode for crystalline silicon solar cells

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-06-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost.

  5. Pin solar cells made of amorphous silicon

    Science.gov (United States)

    Plaettner, R. D.; Kruehler, W. W.

    Investigations leading to solar cells with a structure SnO2-pin and an efficiency up to 9.8% are reviewed. The production of large-surface metal/pin/transparent conductive oxide (TCO)-solar cells is discussed. A two-chamber reactor, grid structure and tinning of cells, and an a-Si-module are described. The production of glass/TCO/pin/metal-solar cells and a-SiGe:H-compounds is outlined. Measurements on solar cells and diodes including the efficiency of a-Si:H-solar cells, spectral sensitivity, diffusion lengths, field effect measurements, and modifications of solar cells (space-charge limited currents, reduction of solar cells aging) are treated.

  6. Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells

    OpenAIRE

    Amornrat Limmanee; Songkiate Kittisontirak; Sorapong Inthisang; Taweewat Krajangsang; Jaran Sritharathikhun; Kobsak Sriprapha

    2013-01-01

    We report on the development and application of n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H) in hydrogenated amorphous silicon oxide/hydrogenated microcrystalline silicon (a-SiO:H/μc-Si:H) micromorph solar cells. The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2) to silane (SiH4) flow rate was raised; however, a trade-off against electrical property was observed. We applied the n μc-SiO:H film...

  7. Low cost thin film poly-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

  8. Silicon solar cell using optimized intermediate reflector layer

    Science.gov (United States)

    Khalifa, Ahmed E.; Swillam, Mohamed A.

    2016-03-01

    Thin film silicon based photovoltaic cells have the advantages of using low cost nontoxic abundant constituents and low thermal manufacturing budget. However, better long-term efficiencies need to be achieved overcoming its inherent bad electrical properties of amorphous and/or microcrystalline Silicon. For the goal of achieving best results, multijunction cells of amorphous and microcrystalline silicon thin layers are industrially and lab utilized in addition to using one or more light management techniques such as textured layers, periodic and plasmonic back reflectors, flattened reflective substrates and intermediate reflector layer (IRL) between multijunction cells. The latter, IRL, which is the focus of this paper, serves as spectrally selective layer between different cells of the multijunction silicon thin film solar cell. IRL, reflects to the top cell short wavelength while permitting and scattering longer ones to achieve the best possible short circuit current. In this study, a new optimized periodic design of Intermediate reflector layer in micromorph (two multijunction cells of Microcrystalline and Amorphous Silicon) thin film solar cells is proposed. The optically simulated short circuit current reaches record values for same thickness designs when using all-ZnO design and even better results is anticipated if Lacquer material is used in combination with ZnO. The design methodology used in the paper can be easily applied to different types of IRL materials and also extended to triple and the relatively newly proposed quadruple thin films solar cells.

  9. Plasmonic silicon solar cells: impact of material quality and geometry

    NARCIS (Netherlands)

    Pahud, C.; Isabella, O.; Naqavi, A.; Haug, F.J.; Zeman, M.; Herzig, H.P.; Ballif, C.

    2013-01-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We

  10. Polycrystalline silicon ribbons for solar cells prepared by fast cooling

    NARCIS (Netherlands)

    Bezemer, J.; Verpalen, J.L.P.W.; Os, C.F.A. van

    1984-01-01

    Experiments on the production of 0.1 mm thick polycrystalline silicon ribbons by jet casting and flow casting are reported. The processes are described with models for heat transport and momentum transport. Attention is paid to process stability. Grain growth, which is necessary for solar cell appli

  11. Modelling and fabrication of high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Smith, A.W.; Salami, J. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical Engineering

    1991-10-01

    This report covers the research conducted on modelling and development of high-efficiency silicon solar cells during the period May 1989 to August 1990. First, considerable effort was devoted toward developing a ray-tracing program for the photovoltaic community to quantify and optimize surface texturing for solar cells. Second, attempts were made to develop a hydrodynamic model for device simulation. Such a model is somewhat slower than drift-diffusion type models like PC-1D, but it can account for more physical phenomena in the device, such as hot carrier effects, temperature gradients, thermal diffusion, and lattice heat flow. In addition, Fermi-Dirac statistics have been incorporated into the model to deal with heavy doping effects more accurately. Third and final component of the research includes development of silicon cell fabrication capabilities and fabrication of high-efficiency silicon cells. 84 refs., 46 figs., 10 tabs.

  12. Stable passivations for high-efficiency silicon solar cells

    Science.gov (United States)

    Gruenbaum, P. E.; Gan, J. Y.; King, R. R.; Swanson, R. M.

    Initial designs of single-crystal silicon point-contact solar cells have shown a degradation in their efficiency after being exposed to concentrated sunlight. The main mechanism appears to be an increase in recombination centers at the Si/SiO2 interface due to ultraviolet light photoinjecting electrons from the silicon conduction band into the silicon dioxide that passivates the cell's front surface. Trichloroethane, texturization, and aluminum during the forming gas anneal all contribute to the instability of the interface. A reasonably good resistance to UV light can be obtained by putting a phosphorus diffusion at the surface and can be improved further by stripping off the deposited oxide after the diffusion and regrowing a dry thermal oxide. A second technique, which utilizes ultrathin oxides and thin polysilicon films and can yield stable point-contact solar cells that are more efficient at higher concentrations, is also described.

  13. Solar breeder: Energy payback time for silicon photovoltaic systems

    Science.gov (United States)

    Lindmayer, J.

    1977-01-01

    The energy expenditures of the prevailing manufacturing technology of terrestrial photovoltaic cells and panels were evaluated, including silicon reduction, silicon refinement, crystal growth, cell processing and panel building. Energy expenditures include direct energy, indirect energy, and energy in the form of equipment and overhead expenses. Payback times were development using a conventional solar cell as a test vehicle which allows for the comparison of its energy generating capability with the energies expended during the production process. It was found that the energy payback time for a typical solar panel produced by the prevailing technology is 6.4 years. Furthermore, this value drops to 3.8 years under more favorable conditions. Moreover, since the major energy use reductions in terrestrial manufacturing have occurred in cell processing, this payback time directly illustrates the areas where major future energy reductions can be made -- silicon refinement, crystal growth, and panel building.

  14. Hydrogen passivation of multi-crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    胡志华; 廖显伯; 刘祖明; 夏朝凤; 陈庭金

    2003-01-01

    The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this paper.Hydrogen plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

  15. Gettering improvements of minority-carrier lifetimesin solar grade silicon

    DEFF Research Database (Denmark)

    Osinniy, Viktor; Nylandsted Larsen, Arne; Dahl, Espen;

    2012-01-01

    processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each......The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature...

  16. Billion silicon-disc markets in solar cells

    International Nuclear Information System (INIS)

    The generation of solar power is estimated to increase ten times higher than it is at present. The nominal power is estimated to be 150 MW by the year 2010. The capacity of a solar cell (100 cm2; efficiency 15%) is 1.5W under good illumination conditions. So the growth estimate, given by the Swiss Saras Bank, requires the processing of over one billion silicon discs in ten years to pn-junction solar cells. The researches, carried out at Helsinki University of Technology and VTT Electronics are presented in the article

  17. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  18. Transparent Conductive Oxides for Thin-Film Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.

    2005-04-25

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150C and 350C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the

  19. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Colder, H. [SIFCOM, CNRS-UMR 6176, ENSICAEN, 6 boulevard Mal Juin, 14050 Caen (France)], E-mail: heloise.taupin@ensicaen.fr; Marie, P.; Gourbilleau, F. [SIFCOM, CNRS-UMR 6176, ENSICAEN, 6 boulevard Mal Juin, 14050 Caen (France)

    2008-08-30

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t{sub SRSO}, are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t{sub SRSO} from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells.

  20. Doped nanocrystalline silicon oxide for use as (intermediate) reflecting layers in thin-film silicon solar cells

    NARCIS (Netherlands)

    Babal, P.

    2014-01-01

    In summary, this thesis shows the development and nanostructure analysis of doped silicon oxide layers. These layers are applied in thin-film silicon single and double junction solar cells. Concepts of intermediate reflectors (IR), consisting of silicon and/or zinc oxide, are applied in tandem cells

  1. Laser texturization in technology of multicrystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    L.A. Dobrzański

    2008-07-01

    Full Text Available Purpose: This paper presents technology of multicrystalline silicon solar cells with laser texturization step. The texturing of polycrystalline silicon surface using Nd:YAG laser makes it possible to increase absorption of the incident solar radiation. Moreover, the additional technological operation consisting in etching in 20% KOH solution at temperature of 80ºC introduced into technology of the photovoltaic cells manufactured from laser textured wafers allows for significant improvement in their electrical performance compared to cells produced from the non-textured wafers after saw damage removal.Design/methodology/approach: The topography of laser textured surfaces were investigated using DSM 940 OPTON scanning electron microscope and LSM 5 Pascal ZEISS confocal laser scanning microscope. The reflectance of produced textures was measured by Perkin-Elmer Lambda spectrophotometer with an integrating sphere. Electrical parameters of manufactured solar cells were characterized by measurements of I-V light characteristics under standard AM 1.5 radiation.Findings: Solar cells manufactured from laser-textured polycrystalline silicon wafers demonstrate worse electrical performance than cells manufactured from the non-textured wafers after saw damage removal as well as wafers textured by etching in alkaline solutions. Etching of textured surface in 20% KOH solution at temperature of 80ºC subsequent to laser processing shows to have a greatly increased impact on electrical performance of solar cells.Research limitations/implications: Continued etching to remove laser induced defects cause the texture to flatten out reducing it optical effectiveness.Originality/value: This paper demonstrates, that laser processing is very promising technique for texturing multicrystaline silicon independent on grains crystallographic orientation compared to conventional texturing methods in technology of solar cells.

  2. Exploring of energy efficiency on monocrystalline silicon solar power plant

    International Nuclear Information System (INIS)

    Full text: This paper presents the basic information on monocrystalline-silicon solar power plant of 2 kW, set up on the roof of the Academy of Sciences and Arts of Republic of Serbia. Beside this, the main properties of the equipment for exploring energy efficiency have been analyzed in dependence on weather conditions (inverter, communication system, automatic weather station etc.) This paper includes theoretical and experimental results on energy efficiency of above mentioned solar plant starting from November 2012 and ending in April 2013. During this analyze, the following factors has been taken into account: intensity of solar radiation, temperature, wind speed, air humidity, produced electric energy, CO2 emissions, financial output. : key words: solar energy, solar power plants, energy efficiency, PV systems, PVGIS

  3. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    N.J. Mohr; A. Meijer; M.A.J. Huijbregts; L. Reijnders

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  4. Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Characterization of silicon heterojunctions for solar cells

    Directory of Open Access Journals (Sweden)

    Ankudinov Alexander

    2011-01-01

    Full Text Available Abstract Conductive-probe atomic force microscopy (CP-AFM measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H and n-type crystalline silicon (c-Si as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p a-Si:H/(n c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n a-Si:H/(p c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.

  6. The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mikolášek, Miroslav, E-mail: miroslav.mikolasek@stuba.sk [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Nemec, Michal; Kováč, Jaroslav [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Foti, Marina; Gerardi, Cosimo [IMS-R and D, STMicroelectronics, Stradale Primosole, 50, 95121 Catania (Italy); Mannino, Giovanni; Valenti, Luca; Lombardo, Salvatore [CNR-IMM, Zona Industriale, Ottava Strada, 5, 95121 Catania (Italy)

    2014-11-15

    Highlights: • We studied the impact of the thermal annealing on the silicon heterojunction solar cells. • Compared were samples deposited by ICP-CVD and PE-CVD methods. • Annealing up to 250 °C improves output performance of both solar cells. • Annealing above 250 °C increases defect states density at the interface and in the amorphous emitter. • Samples deposited by ICP-CVD shows better resistance against annealing. - Abstract: This paper presents a comparative study of the influence of post-deposition annealing on amorphous silicon/crystalline silicon heterojunction solar cells deposited by ICP-CVD and PE-CVD techniques. Two major effects on the solar cell efficiency occur caused by thermal annealing. The first effect is a slight improvement of the performance on annealing up to 250 °C. The second effect, for annealing temperatures above 250 °C, reveals deterioration of the solar cell performance. It is suggested that both effects are related to thermally activated diffusion of hydrogen. For low annealing temperatures, diffusion of weakly bonded hydrogen allows to passivate the defects in the amorphous emitter and at the heterointerface. In the high temperature annealing region, outdiffusion of hydrogen is assumed to be responsible for an increase of defect states in the structures. The results indicate a better stability after high temperature treatment for the sample prepared by ICP-CVD technology.

  7. Degradation of bulk diffusion length in CZ silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reiss, J.H.; King, R.R.; Mitchell, K.W. [Siemens Solar Industries, Camarillo, CA (United States)

    1995-08-01

    Commercially-produced, unencapsulated, CZ silicon solar cells can lose 3 to 4% of their initial efficiency after exposure to light. After this initial, rapid ( < 30 min.) decrease, the cell power output remains stable. The cell performance recovers in a matter of hours in the dark at room temperature, and degrades again under light exposure. The different conditions under which CZ silicon cells degrade, and the reverse process, annealing, are characterized with the methods of spectral response and current-voltage (I-V) measurements. Iron impurities are a possible cause of this effect.

  8. Potential of amorphous and microcrystalline silicon solar cells

    OpenAIRE

    Meier, Johannes; Spitznagel, J.; Kroll, U.; Bucher, C.; Faÿ Sylvie; Moriarty, T.; Shah, Arvind

    2008-01-01

    Low pressure chemical vapour deposition (LP-CVD) ZnO as front transparent conductive oxide (TCO), developed at IMT, has excellent light-trapping properties for a-Si:H p-i-n single-junction and ‘micromorph’ (amorphous/microcrystalline silicon) tandem solar cells. A stabilized record efficiency of 9.47% has independently been confirmed by NREL for an amorphous silicon single-junction p-i-n cell (~1 cm2) deposited on LP-CVD ZnO coated glass. Micromorph tandem cells with an initial efficiency of ...

  9. Solar power conversion efficiency in modulated silicon nanowire photonic crystals

    Science.gov (United States)

    Deinega, Alexei; John, Sajeev

    2012-10-01

    It is suggested that using only 1 μm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power conversion efficiency in the range of 15%-20% can be achieved. Choosing a specific modulation profile provides antireflection, light trapping, and back-reflection over broad angles in targeted spectral regions for high efficiency power conversion without solar tracking. Solving both Maxwell's equations in the 3D photonic crystal and the semiconductor drift-diffusion equations in each nanowire, we identify optimal junction and contact geometries and study the influence of the nanowire surface curvature on solar cell efficiency. We demonstrate that suitably modulated nanowires enable 20% efficiency improvement over their straight counterparts made of an equivalent amount of silicon. We also discuss the efficiency of a tandem amorphous and crystalline silicon nanowire photonic crystal solar cell. Opportunities for "hot carrier" collection and up-conversion of infrared light, enhanced by photonic crystal geometry, facilitate further improvements in power efficiency.

  10. Resource recovery of scrap silicon solar battery cell.

    Science.gov (United States)

    Lee, Ching-Hwa; Hung, Chi-En; Tsai, Shang-Lin; Popuri, Srinivasa R; Liao, Ching-Hua

    2013-05-01

    In order to minimize pollution problems and to conserve limited natural resources, a hydrometallurgical procedure was developed in this study to recover the valuable resources of silicon (Si), silver (Ag) and aluminum (Al) from scrap silicon solar battery cells. In this study, several methods of leaching, crystallization, precipitation, electrolysis and replacement were employed to investigate the recovery efficiency of Ag and Al from defective monocrystalline silicon solar battery cells. The defective solar battery cells were ground into powder followed by composition analysis with inductively coupled plasma-atomic emission spectrometry. The target metals Ag and Al weight percentage were found to be 1.67 and 7.68 respectively. A leaching process was adopted with nitric acid (HNO3), hydrochloric acid, sulfuric acid (H2SO4) and sodium hydroxide as leaching reagent to recover Ag and Al from a ground solar battery cell. Aluminum was leached 100% with 18N H2SO4 at 70°C and Ag was leached 100% with 6N HNO3. Pure Si of 100% was achieved from the leaching solution after the recovery of Ag and Al, and was analyzed by scanning electron microscope-energy dispersive spectroscopy. Aluminum was recovered by crystallization process and silver was recovered by precipitation, electrolysis and replacement processes. These processes were applied successfully in the recovery of valuable metal Ag of 98-100%.

  11. Selective-emitter crystalline silicon solar cells using phosphorus paste

    International Nuclear Information System (INIS)

    Selective-emitter structures have been studied to improve the conversion efficiency of crystalline silicon solar cells. However, such structures require additional complicated processes and incur extra cost. In this work, we used phosphorus paste (P-paste) to form a heavily-doped region beneath the grid and POCl3 to create a shallow emitter area. This method should be convenient to use in the solar-cell industry because it requires only additional P paste printing, compared to the case of homogeneous solar cells. Diffusion parameters including the temperature, diffusion time, and ambient gases were optimized. We observed that the spreading of the P paste was affected by the pyramidal size of the textured wafer due to the low viscosity of the P paste. The pyramidal height of the textured silicon surface was optimized at 3 μm to counterbalance the surface reflectance and the spreading of the P paste. The short-circuit current density of the completed selective emitter solar cell was increased, and an improvement of blue response in the internal quantum efficiency was seen while contact properties such as the fill factor deteriorated due to the spreading of the P paste and the thin emitter on top of the pyramid of the textured silicon surface. Double printing of the P paste was applied to solve this contact problem; a fill factor improvement of 2.4% was obtained.

  12. Selective-emitter crystalline silicon solar cells using phosphorus paste

    Science.gov (United States)

    Jeong, Kyung Taek; Kang, Min Gu; Song, Hee-eun

    2014-11-01

    Selective-emitter structures have been studied to improve the conversion efficiency of crystalline silicon solar cells. However, such structures require additional complicated processes and incur extra cost. In this work, we used phosphorus paste (P-paste) to form a heavily-doped region beneath the grid and POCl3 to create a shallow emitter area. This method should be convenient to use in the solar-cell industry because it requires only additional P paste printing, compared to the case of homogeneous solar cells. Diffusion parameters including the temperature, diffusion time, and ambient gases were optimized. We observed that the spreading of the P paste was affected by the pyramidal size of the textured wafer due to the low viscosity of the P paste. The pyramidal height of the textured silicon surface was optimized at 3 μm to counterbalance the surface reflectance and the spreading of the P paste. The short-circuit current density of the completed selective emitter solar cell was increased, and an improvement of blue response in the internal quantum efficiency was seen while contact properties such as the fill factor deteriorated due to the spreading of the P paste and the thin emitter on top of the pyramid of the textured silicon surface. Double printing of the P paste was applied to solve this contact problem; a fill factor improvement of 2.4% was obtained.

  13. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  14. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  15. TEM investigations of laser texturized polycrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    J. Konieczny

    2012-07-01

    Full Text Available Purpose: The presented in this paper research results concern investigation of phase transformation of the surface structure of polycrystalline silicon solar cell. The surface of boron doped polycrystalline silicon wafers were texturised by means of diode-pumped pulsed neodymium-doped yttrium aluminium garnet laser crystal (Nd:YAG. Investigations were carried out on transmission electron microscope (TEM to observe the changes that occurred after laser treatment of the surface layer. Changes in microstructure of the surface layer of solar cells under the influence of the laser beam are presented using the analysis phase and dislocations present in the microstructure. Observations were carried out on prepared thin foils. Moreover, diffraction patterns from selected regions of textured wafers were solved to qualify phase transformations under influence of laser beam.Design/methodology/approach: Investigations were carried out on the Transmission Electron Microscope JEM 3010 supplied by JEOL with 300 kV accelerating voltage equipped with an electronic camera configured with a computer. The microstructure was obtained in the bright field image as well dark field working in a magnification range of 10000x to ca. 100000x. Phases identification was performed by means of selected area diffraction (SAD method, where for diffraction pattern calculations the computer software “Eldyf” was used, kindly supplied by the Institute of Materials Science, University of Silesia.Findings: The research included analyze of the influence of laser treatment conditions on geometry, roughness and size of laser made surface texture of silicon wafer applied for solar cells.Research limitations/implications: Paper contributes to research on silicon surface processing using laser beam.Practical implications: Conducted investigations may be applied in optimisation process of solar cell surface processing.Originality/value: The range of possible applications increases for

  16. Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-03-15

    One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Acceptable contamination levels in solar grade silicon: From feedstock to solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, J. [Instituto de Energia Solar, Avd. Complutense s/n, 28040 Madrid (Spain)], E-mail: jasmin.hofstetter@ies-def.upm.es; Lelievre, J.F.; Canizo, C.; Luque, A. del [Instituto de Energia Solar, Avd. Complutense s/n, 28040 Madrid (Spain)

    2009-03-15

    Ultimately, alternative ways of silicon purification for photovoltaic applications are developed and applied. There is an ongoing debate about what are the acceptable contamination levels within the purified silicon feedstock to specify the material as solar grade silicon. Applying a simple model and making some additional assumptions, we calculate the acceptable contamination levels of different characteristic impurities for each fabrication step of a typical industrial mc-Si solar cell. The acceptable impurity concentrations within the finished solar cell are calculated for SRH recombination exclusively and under low injection conditions. It is assumed that during solar cell fabrication impurity concentrations are only altered by a gettering step. During the crystallization process, impurity segregation at the solid-liquid interface and at extended defects are taken into account. Finally, the initial contamination levels allowed within the feedstock are deduced. The acceptable concentration of iron in the finished solar cell is determined to be 9.7x10{sup -3} ppma whereas the concentration in the silicon feedstock can be as high as 12.5 ppma. In comparison, the titanium concentration admitted in the solar cell is calculated to be 2.7x10{sup -4} ppma and the allowed concentration of 2.2x10{sup -2} ppma in the feedstock is only two orders of magnitude higher. Finally, it is shown theoretically and experimentally that slow cooling rates can lead to a decrease of the interstitial Fe concentration and thus relax the purity requirements in the feedstock.

  18. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo

    2012-06-13

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  19. Laser recrystallization for efficient multi-crystalline silicon solar cell

    Science.gov (United States)

    Song, Lihui; Wilson, John; Lee, James

    2016-08-01

    A multi-crystalline silicon wafer contains dislocations and grain boundaries, which are detrimental to the performance of the multi-crystalline silicon solar cell. The dislocations and grain boundaries extend across the junction and dramatically degrade the ideality and fill factor of the cell. In this paper, a laser is used to recrystallize the emitter region of a multi-crystalline silicon wafer to remove crystallographic defects present in the junction. It was demonstrated that, with an appropriate laser power and scan speed, laser recrystallized patterns can have an enhanced photoluminescence response and internal quantum efficiency. Backscattered electron image and x-ray diffraction analyses also revealed that the laser recrystallized layer resembles a single crystalline like layer. Introducing a full area laser recrystallized layer may improve the open circuit voltage and fill factor of the cell, which significantly improved cell efficiency. External quantum efficiency and dark I–V measurements consistently supported this result.

  20. Optical stability of silicon nitride MIS inversion layer solar cells

    Science.gov (United States)

    Jaeger, K.; Hezel, R.

    1985-09-01

    For MIS inversion layer solar cells with silicon nitride as an AR coating, accelerated optical stress tests were performed. Degradation of the cell characteristics occurred which was found to be caused by photons with energies equal to or greater than 3.7 eV (wavelength of 335 nm or less). Generation of interface states at the silicon-insulator interface by UV light is shown to be the mechanism responsible. The original cell data could be completely restored by heat treatment (activation energy 0.5 eV) and partially by illumination with short-wavelength light. As the most striking result, however, it is demonstrated that the UV light-induced instability can be drastically improved by incorporation of cesium ions into the silicon nitride layer. An interpretation is given for this effect.

  1. Full process for integrating silicon nanowire arrays into solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Perraud, Simon; Poncet, Severine; Noel, Sebastien; Levis, Michel; Faucherand, Pascal; Rouviere, Emmanuelle [CEA, LITEN, Laboratoire des Composants pour la Recuperation d' Energie, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Thony, Philippe; Jaussaud, Claude; Delsol, Regis [CEA, LITEN, Laboratoire des Composants Solaires, INES-RDI, Savoie Technolac, 50 avenue du Lac Leman, 73377 Le-Bourget-du-Lac (France)

    2009-09-15

    A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour-liquid-solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical-mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100 mW/cm{sup 2}, our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects. (author)

  2. Predicting the interface morphologies of silicon films on arbitrary substrates: application in solar cells.

    Science.gov (United States)

    Jovanov, Vladislav; Xu, Xu; Shrestha, Shailesh; Schulte, Melanie; Hüpkes, Jürgen; Knipp, Dietmar

    2013-08-14

    A three-dimensional model that predicts the interface morphologies of silicon thin-film solar cells prepared on randomly textured substrates was developed and compared to experimental data. The surface morphologies of silicon solar cells were calculated by using atomic force microscope scans of the textured substrates and the film thickness as input data. Calculated surface morphologies of silicon solar cells are in good agreement with experimentally measured morphologies. A detailed description of the solar cell interface morphologies is necessary to understand light-trapping in silicon single junction and micromorph tandem thin-film solar cells and derive optimal light-trapping structures. PMID:23889117

  3. Solution-processed crystalline silicon double-heterojunction solar cells

    Science.gov (United States)

    Devkota, Ramesh; Liu, Qiming; Ohki, Tatsuya; Hossain, Jaker; Ueno, Keiji; Shirai, Hajime

    2016-02-01

    Crystalline silicon double-heterojunction solar cells were fabricated using Si/organic and Si/Cs2CO3 heterojunctions. The front heterojunction is formed by spin-coating conductive polymer poly(3,4-ethyenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on n-type Czochralski (CZ) (100) silicon, which separates the photogenerated carriers and blocks the electron dark current while allowing the photocurrent to pass through. The rear heterojunction, formed by spin-coating Cs2CO3 and polyethylenimine (PEI) dissolved in 2-ethoxyethanol and Al metal evaporation, functions as a back surface field that reduces the hole dark current while allowing the electron photocurrent to pass through. The double-heterojunction device showed a power conversion efficiency of 12.7% under AM1.5G simulated solar light exposure.

  4. Microcrystalline silicon and the impact on micromorph tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Meier, J.; Dubail, S.; Golay, S.; Kroll, U.; Fay, E.; Vallat-Sauvain, E.; Feitknecht, L.; Dubail, J.; Shah, A. [Universite de Neuchatel (Switzerland). Inst. de Microtechnique

    2002-10-01

    Intrinsic microcrystalline silicon opens up new ways for silicon thin-film multi-junction solar cells, the most promising being the 'micromorph' tandem concept. The microstructure of entirely microcrystalline p-i-n solar cells is investigated by transmission electron microscopy. By applying low pressure chemical vapor deposition ZnO as front TCO in p-i-n configurated micromorph tandems, a remarkable reduction of the microcrystalline bottom cell thickness is achieved. Micromorph tandem cells with high open circuit voltages of 1.413 V could be accomplished. A stabilized efficiency of around 11% is estimated for micromorph tandems consisting of 2 {sup {mu}}m thick bottom cells. Applying the monolithic series connection, a micromorph module (23.3 cm{sup 2}) of 9.1% stabilized efficiency could be obtained. (Author)

  5. Photoluminescence in large fluence radiation irradiated space silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hisamatsu, Tadashi; Kawasaki, Osamu; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Tsukamoto, Kazuyoshi

    1997-03-01

    Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

  6. Photo stability Assessment in Amorphous-Silicon Solar Cells

    International Nuclear Information System (INIS)

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characterisation in well established conditions. This method is suitable for all kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs

  7. Efficiency improvement of silicon nanostructure-based solar cells

    International Nuclear Information System (INIS)

    Solar cells based on a high-efficiency silicon nanostructure (SNS) were developed using a two-step metal-assisted electroless etching (MAEE) technique, phosphorus silicate glass (PSG) doping and screen printing. This process was used to produce solar cells with a silver nitrate (AgNO3) etching solution in different concentrations. Compared to cells produced using the single MAEE technique, SNS-based solar cells produced with the two-step MAEE technique showed an increase in silicon surface coverage of ∼181.1% and a decrease in reflectivity of ∼144.3%. The performance of the SNS-based solar cells was found to be optimized (∼11.86%) in an SNS with a length of ∼300 nm, an aspect ratio of ∼5, surface coverage of ∼84.9% and a reflectivity of ∼6.1%. The ∼16.8% increase in power conversion efficiency (PCE) for the SNS-based solar cell indicates good potential for mass production. (paper)

  8. Study of solar cells based on upgraded metallurgical grade silicon

    Science.gov (United States)

    Schlosser, V.; Kuchar, F.; Seeger, K.

    A study is presented on the applicability of diffused solar cells when cast upgraded metallurgical grade silicon (UMG-Si) is used. Cells have been prepared from differently processed UMG-Si and for comparison from high purity FZ-Si. The material was characterized by the minority carrier diffusion length, which was obtained from spectral response measurements. A two-diode equivalent circuit model was used in order to evaluate pn-junction characteristics under illumination and in the dark.

  9. Corrosion In Amorphous-Silicon Solar Cells And Modules

    Science.gov (United States)

    Mon, Gordon R.; Wen, Liang-Chi; Ross, Ronald G., Jr.

    1988-01-01

    Paper reports on corrosion in amorphous-silicon solar cells and modules. Based on field and laboratory tests, discusses causes of corrosion, ways of mitigating effects, and consequences for modules already in field. Suggests sealing of edges as way of reducing entry of moisture. Cell-free perimeters or sacrificial electrodes suggested to mitigate effects of sorbed moisture. Development of truly watertight module proves to be more cost-effective than attempting to mitigate effects of moisture.

  10. Light trapping effects in thin film silicon solar cells

    OpenAIRE

    Haug, FJ; Söderström, T; Dominé, D.; Ballif, C.

    2009-01-01

    We present advanced light trapping concepts for thin film silicon solar cells. When an amorphous and a microcrystalline absorber layers are combined into a micromorph tandem cell, light trapping becomes a challenge because it should combine the spectral region from 600 to 750 nm for the amorphous top cell and from 800 to 1100 for the microcrystalline bottom cell. Because light trapping is typically achieved by growing on textured substrates, the effect of interface textures on the material an...

  11. Modeling of Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Luppina, P.; Lugli, P.; Goodnick, S.

    2015-06-14

    Here we present modeling results on crystalline Si/amorphous Si (a-Si) heterojunction solar cells using Sentaurus including various models for defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we have investigate the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer

  12. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  13. A New Approach to Light Scattering from Nanotextured Interfaces for Silicon Thin-Film Solar Cells

    OpenAIRE

    Battaglia, Corsin; Domine, Didier René; Haug, Franz-Josef; Ballif, Christophe

    2010-01-01

    A new approach is presented to determine the angular and spectral characteristics of light diffusely scattered from nanotextured front electrodes into the absorbing silicon layer of thin-film silicon solar cell devices.

  14. Fabrication of solution-processed hydrogenated amorphous silicon single junction solar cells

    OpenAIRE

    Masuda, Takashi; Sotani, Naoya; Hamada, Hiroki; Matsuki, Yasuo; Shimoda, Tatsuya

    2012-01-01

    Hydrogenated amorphous silicon solar cells were fabricated using solution-based processes. All silicon layers of the p-i-n junction were stacked by a spin-cast method using doped and non-doped polydihydrosilane solutions. Further, a hydrogen-radical treatment under vacuum conditions was employed to reduce spin density in the silicon films. Following this treatment, the electric properties of the silicon films were improved, and the power conversion efficiency of the solar cells was also incre...

  15. Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2013-01-01

    Full Text Available We report on the development and application of n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H in hydrogenated amorphous silicon oxide/hydrogenated microcrystalline silicon (a-SiO:H/μc-Si:H micromorph solar cells. The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2 to silane (SiH4 flow rate was raised; however, a trade-off against electrical property was observed. We applied the n μc-SiO:H films in the top a-SiO:H cell and investigated the changes in cell performance with respect to the electrical and optical properties of the films. It was found that all photovoltaic parameters of the micromorph silicon solar cells using the n top μc-SiO:H layer enhanced with increasing the CO2/SiH4 ratio up to 0.23, where the highest initial cell efficiency of 10.7% was achieved. The enhancement of the open circuit voltage (Voc was likely to be due to a reduction of reverse bias at subcell connection—n top/p bottom interface—and a better tunnel recombination junction contributed to the improvement in the fill factor (FF. Furthermore, the quantum efficiency (QE results also have demonstrated intermediate-reflector function of the n μc-SiO:H films.

  16. A variety of microstructural defects in crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Microstructure defects in crystalline silicon. • Light beam induced photocurrent. • Reversed bias voltage measurements on microscale. • Thermal measurement allows identification of defect breakdown mechanism. - Abstract: The performance and lifetime of solar cells critically depends on bulk and surface defects. To improve performance of solar cells, localization and characterization of defects on the microscale is an important issue. This paper describes a variety of microstructural defects in crystalline silicon solar cells which appear during the cell processing steps. The set of defects have been investigated and localized using visible light emission under reversed bias voltage. A light beam induced photocurrent method allows localization of defects having impact on the sample current–voltage plot and reversed bias light emission characteristics. These are shown together with the micrographs of defective surface areas. As a result, particular defects which induce nonlinearity and local breakdown in the current–voltage plot were identified in tested solar cell structures. Furthermore, measurements at various temperatures allows to identify the breakdown mechanism of the investigated defects. An interesting result of the investigation is that the majority of defects are associated with surface inhomogeneities, but not all surface inhomogeneities act as defects

  17. Application of crystalline silicon solar cells in photovoltaic modules

    Directory of Open Access Journals (Sweden)

    L.A. Dobrzański

    2010-08-01

    Full Text Available Purpose: The aim of the paper is to determinate basic electrical properties of solar cells, made of them photovoltaic module and analysis of its main electrical parameters.Design/methodology/approach: In this study, several methods were used: current – voltage characteristic to determinate basic electrical properties of 36 monocrystalline silicon solar cells, soft soldering technique to bond solar cells . Photovoltaic module was produced from 31 solar cells with the largest short-circuit current, which were joined in series.Findings: In order to obtain a device producing an electrical current with a higher current and voltage level, solar cells were connected in a photovoltaic module and then protected from damages derived from external factors. In series connection solar cell with the lowest current determines the current flowing in the PV module. Taking this fact into account the analysis of photovoltaic module construction was performed.Practical implications: Because of low operating cost and simplicity of photovoltaic installation, photovoltaic technology is perfectly suitable for supplying objects which are beyond powers network range as well as connected to it. In many cases, they are less costly option than a direct extension of the power network.Originality/value: Protecting the environment from degradation due to pollution, which has source in conventional power industry, as well as diminishing resources of fossil fuels, tend to increase development of renewable energy production such as photovoltaic technology.

  18. Detailed balance limit efficiency of silicon intermediate band solar cells

    Institute of Scientific and Technical Information of China (English)

    Cao Quan; Ma Zhi-Hua; Xue Chun-Lai; Zuo Yu-Hua; Wang Qi-Ming

    2011-01-01

    The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC),which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration,improving greatly than 40.7% of the Shockley-Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the siliconbased solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV,and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%,having a better potential.

  19. Material properties of microcrystalline silicon for solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Czang-Ho; Shin, Myunghun; Lim, Mi-Hwa; Seo, Jun-Yong; Lee, Jung-Eun; Lee, Hee-Yong; Kim, Byoung-June; Choi, Donguk [Development Group, LCD Division, Samsung Electronics, Yongin City, Gyeonggi-do (Korea, Republic of)

    2011-01-15

    The paper reviews the material requirements of microcrystalline silicon ({mu}c-Si) in terms of the device operation and configuration for thin film solar cells and thin film transistors (TFTs). We investigated the material properties of {mu}c-Si films deposited by using 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD) from a conventional H{sub 2} dilution in SiH{sub 4}. Two types of intrinsic {mu}c-Si films deposited at the high pressure narrow electrode gap and the low pressure wide electrode gap were studied for the solar cell absorption layers. The material properties were characterized using dark conductivity, Raman spectroscopy, and transmission electron microscope (TEM) measurements. The {mu}c-Si quality and solar cell performance were mainly determined by microstructure characteristics. Solar cells adopting the optimized {mu}c-Si film demonstrated high stability with no significant changes in solar cell performance after air exposure for six months and subsequent illumination for over 300 h. The results can be explained that low ion bombardment and high atomic hydrogen density under the PECVD condition of the high pressure narrow electrode gap produce high-quality {mu}c-Si films for solar cell application. (author)

  20. Polyimide based amorphous silicon solar modules

    Science.gov (United States)

    Jeffrey, Frank R.; Grimmer, Derrick P.; Martens, Steven A.; Abudagga, Khaled; Thomas, Michael L.; Noak, Max

    1993-01-01

    Requirements for space power are increasingly emphasizing lower costs and higher specific powers. This results from new fiscal constraints, higher power requirements for larger applications, and the evolution toward longer distance missions such as a Lunar or Mars base. The polyimide based a-Si modules described are being developed to meet these needs. The modules consist of tandem a-Si solar cell material deposited directly on a roll of polyimide. A laser scribing/printing process subdivides the deposition into discrete cell strips which are series connected to produce the required voltage without cutting the polymer backing. The result is a large, monolithic, blanket type module approximately 30 cm wide and variable in length depending on demand. Current production modules have a specific power slightly over 500 W/Kg with room for significant improvement. Costs for the full blanket modules range from $30/Watt to $150/Watt depending on quantity and engineering requirements. Work to date focused on the modules themselves and adjusting them for the AMO spectrum. Work is needed yet to insure that the modules are suitable for the space environment.

  1. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Maruska, P [Spire Corp., Bedford, MA (United States)

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  2. Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications

    International Nuclear Information System (INIS)

    Tandem solar cells consist of multiple individual solar cells stacked in order of increasing bandgap, with the cell with highest bandgap towards the incident light. This allows photons to be absorbed in the cell that will convert them to electricity with the greatest efficiency, and is the only solar cell concept to surpass the theoretical efficiency limit of a conventional solar cell so far. This work is concerned with the development of silicon nanocrystals (Si NCs) embedded in silicon carbide, which are expected to have a higher bandgap than bulk Si due to quantum confinement, for use in the top cell of a two-junction tandem cell. Charge carrier transport and recombination were investigated as a function of various parameters. Distortion of luminescence spectra by optical interference was highlighted and a robust model to describe transport of majority carriers was developed. Furthermore, a range of processing steps required to produce a Si NC-based tandem cell were studied, culminating in the preparation of the first Si NC-based tandem cells. The resulting cells exhibited open-circuit voltages of 900 mV, demonstrating tandem cell functionality.

  3. The silicon solar cell as a photometric detector.

    Science.gov (United States)

    Witherell, P G; Faulhaber, M E

    1970-01-01

    Early in their development, silicon solar cells were recognized to have characteristics desirable for photometric detectors. It is therefore surprising that their use in this way has not become more widespread. Results of an investigation to establish more completely the photometric capabilities of these cells are presented in this paper. An equivalent circuit model is used to predict performance from basic cell parameters and the dependence on illumination level and load impedance is established. When load impedance is low, silicon cells have a small temperature coefficient and the cell current is accurately proportional to illumination. With high impedance loads and high illumination levels, the cell voltage is logarithmically related to illumination and the temperature sensitivity is approximately an order of magnitude greater. Variation of spectral response between unselected cells from the same manufacturer was found to be considerably less than that typically measured for unselected phototubes. PMID:20076139

  4. Infrared electroabsorption spectra in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lyou, J.H.; Schiff, E.A.; Hegedus, S.S.; Guha, S.; Yang, J.

    1999-07-01

    The authors report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. They find a band with a peak energy of 0.8 eV. The existence of this band has not, to their knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon. The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

  5. Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

    Energy Technology Data Exchange (ETDEWEB)

    Nouri, H.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Bouaicha, M. [Laboratoire de Photovoltaique, des Semi-conducteurs et des Nanostructures, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2009-10-15

    In this work we analyse the effect of porous silicon on the performances of multicrystalline silicon (mc-Si) solar cells during the porous silicon-based gettering procedure. This procedure consists of forming PS layers on both front and back sides of the mc-Si wafers followed by an annealing in an infrared furnace under a controlled atmosphere at different temperatures. Three sets of samples (A, B and C) have been prepared; for samples A and B, the PS films were removed before and after annealing, respectively. In order to optimize the annealing temperature, we measure the defect density at a selected grain boundary (GB) using the dark current-voltage (I-V) characteristics across the GB itself. The annealing temperature was optimized to 1000 C. The effect of these treatments on the performances of mc-Si solar cells was studied by means of the current-voltage characteristic (at AM 1.5) and the internal quantum efficiency (IQE). The results obtained for cell A and cell B were compared to those obtained on a reference cell (C). (author)

  6. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  7. Electroplated contacts and porous silicon for silicon based solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

    2015-04-15

    Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

  8. Using amorphous silicon solar cells to boost the viability of luminescent solar concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, Daniel J. [Physics Department, Imperial College London, South Kensington campus, SW7 2AZ, London (United Kingdom); Sark, Wilfried G.J.H.M. van [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Velthuijsen, Steven T.; Schropp, Ruud E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2010-04-15

    We have, for the first time, designed and fabricated hydrogenated amorphous silicon solar cells to be used in conjunction with Luminescent Solar Concentrators (LSCs). LSCs are planar plastic sheets doped with organic dyes that absorb solar illumination and down shift the energy to narrowband luminescence which is collected by solar cells attached to the sheet edge. We fabricated an LSC module with two bonded solar cells and performed characterisation with the cells connected in series and parallel configurations. We find that the LSC module has an optical collection efficiency of 9.5% and an optimum power conversion efficiency of approaching 1% when the cells are in a parallel connection. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Radiation damage and annealing of amorphous silicon solar cells

    Science.gov (United States)

    Byvik, C. E.; Slemp, W. S.; Smith, B. T.; Buoncristiani, A. M.

    1984-01-01

    Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

  10. Silicon (BSFR) solar cell AC parameters at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, R Anil; Suresh, M.S. [ISRO Satellite Center, Bangalore- 560 017 (India); Nagaraju, J. [Solar Energy and Thermodynamic Laboratory, Department of Instrumentation, Indian Institute of Science, Bangalore- 560 012 (India)

    2005-01-31

    The AC parameters of back surface field reflected (BSFR) silicon solar cell are measured at different cell temperatures (198-348K) both in forward and reverse bias under dark condition using impedance spectroscopy technique. It is found that cell capacitance increases with temperature whereas cell resistance decreases, in forward bias voltage. Beyond maximum power point voltage, the cell inductance (0.28{mu}H) is measured, as the inductive reactance is comparable with cell series resistance. The measured cell parameters (cell capacitance, dynamic resistance, etc) are used to calculate the mean carrier lifetime and diode factor at different cell temperatures.

  11. Highest efficiency rapid thermal processed multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Noel, S.; Muller, J.C. [Laboratoire PHASE, Strasbourg (France); Lautenschlager, H. [Fraunhofer Institute for Solar Energy Systems, Freiburg (Germany)

    2001-07-01

    The formation of pn junctions and surface passivation by rapid thermal processing is being proved as a new and competitive method for silicon solar cell production. As the main process mechanisms are enhanced, the total process time at high temperature can be kept in the minute range, for the realization of emitter, back surface field (BSF) and surface passivation. In this work, we demonstrate for the first time that this knowledge, avoiding any in-situ annealing step acquired on the sc-Si, can also be applied on industrial mc-Si (Polix) without bulk degradation, leading to a record conversion efficiency of 16.7%. (author)

  12. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.;

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  13. Materials requirements for high-efficiency silicon solar cells

    Science.gov (United States)

    Wolf, M.

    1985-01-01

    To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

  14. Platinum nanoparticle decorated silicon nanowires for efficient solar energy conversion.

    Science.gov (United States)

    Peng, Kui-Qing; Wang, Xin; Wu, Xiao-Ling; Lee, Shuit-Tong

    2009-11-01

    High-density aligned n-type silicon nanowire (SiNW) arrays decorated with discrete 5-10 nm platinum nanoparticles (PtNPs) have been fabricated by aqueous electroless Si etching followed by an electroless platinum deposition process. Coating of PtNPs on SiNW sidewalls yielded a substantial enhancement in photoconversion efficiency and an apparent energy conversion efficiency of up to 8.14% for the PtNP-decorated SiNW-based photoelectrochemical solar cell using a liquid electrolyte containing Br(-)/Br(2) redox couple. The results demonstrate PtNP-decorated SiNWs to be a promising hybrid system for solar energy conversion. PMID:19807069

  15. High efficiency silicon nanohole/organic heterojunction hybrid solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Lei [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); Wang, Xincai; Zheng, Hongyu [Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); He, Lining; Wang, Hao; Rusli, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yu, Hongyu, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [South University of Science and Technology of China, Shenzhen (China)

    2014-02-03

    High efficiency hybrid solar cells are fabricated based on silicon with a nanohole (SiNH) structure and poly (3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The SiNH structure is fabricated using electroless chemical etching with silver catalyst, and the heterojunction is formed by spin coating of PEDOT on the SiNH. The hybrid cells are optimized by varying the hole depth, and a maximum power conversion efficiency of 8.3% is achieved with a hole depth of 1 μm. The SiNH hybrid solar cell exhibits a strong antireflection and light trapping property attributed to the sub-wavelength dimension of the SiNH structure.

  16. Optimized rapid thermal process for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Noeel, S.; Slaoui, A.; Muller, J.C. [Laboratoire PHASE, 23, rue du Loess, 67037 Strasbourg (France); Peters, S.; Lautenschlager, H.; Schindler, R. [FhG ISE, Oltmannstr.5, 79100 Freiburg (Germany)

    2001-01-01

    Rapid thermal processing is opening new possibilities for a low-cost and environmentally safe silicon solar cell production, keeping the process time at high temperature in the order of 1min, due to enhanced diffusion and oxidation mechanisms. Controlling the surface concentration of the junction is one of the major parameters, in order to obtain suitable front surface recombination velocities. Simultaneous diffusion of phosphorus and aluminum is used to realize emitter and back surface field in a single high-temperature step, with optimized gettering effect. Controlling the mentioned parameters on industrial 1{omega}cm Cz material lead in 17.5% efficient solar cells on a surface of 25cm{sup 2}. All results are discussed in terms of process temperature, dopant source concentration and effective process time, below 1min including high heating and cooling rates.

  17. Porous silicon-based microtexturing of textured monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saadoun, Moncef; Fethi Boujmil, Mohamed; Aouida, Selma; Ben Rabha, Mohamed; Bessais, Brahim [Photovoltaic Laboratory, Research and Technology Centre of Energy, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    This work aims to examine the effects of surface micro-texturing on the performances of pyramidal textured monocrystalline silicon (c-Si) photovoltaic solar cells. The surface micro-textures were performed on the emitter of alkaline-textured PV solar cells without damaging the junction, using the HNO{sub 3}/HF vapor etching (VE) method. Scanning Electron Microscopy (SEM) shows that vapour etched pyramidal textures exhibit a high texture density essentially composed of porous silicon (PS) microstructure. The VE technique notably decreases the surface reflectivity from 12% for alkaline-textured c-Si wafers to about 6% after micro-texturing. Subsequent to VE, the sheet resistance was found to increase indicating a reduction of the dead layer. Fourier Transform Infrared Spectroscopy (FTIR) measurements showed that the PS-based micro-textures are hydrogen-rich, which could have passivation capabilities of the emitter. Taking into account basic phenomena occurring during carrier photogeneration and minority carrier collection, we tried explaining the variation of the short circuit current density (J{sub sc}), the open circuit voltage (V{sub oc}) and the Fill factor (FF) due to PS-microtexturing of the emitter of c-Si solar cells (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    NARCIS (Netherlands)

    de Jong, M.M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic subst

  19. Investigation of various properties of monocrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    P. Panek

    2012-12-01

    Full Text Available Purpose: The aim of the paper was to apply Sherescan instrument, which is a valuable tool used for fault detection, error diagnosis and process optimization by cell manufacturers, paste suppliers, institutes and universities all over the world.Design/methodology/approach: Screen printed front side contacts and next to co-fired them in the infrared conveyor furnace were carried out at 920°C temperature. A commercial silver paste to form front side metallization was apply into investigations. The investigations were carried out on monocrystalline silicon wafers. Front side metallization of solar cell was formed on textured surface with coated antireflection layer. Investigated were both surface topography and cross section of front contacts using the SEM microscope. The size of textured silicon surface was measured using the AFM microscope. The thickness of tested front contacts was measured using SEM and CLSM microscope. The metal resistance of solar cells was investigated using the ‘Sherescan’ instrument. The I-V characteristics of solar cells were also investigated.Findings: The technological recommendations for the co-firing technology in order to produce a uniformly melted structure, well adhering to the substrate, with the low resistance of the front electrode-to-substrate joint zone.Research limitations/implications: The resistance of the metal-semiconductor connection zone depends on conductive paste composition from which the paths were made, as well as manufacturing conditions.Originality/value: The influence of the obtained front side metallization features on electrical properties of solar cell was estimated.

  20. Process development for single-crystal silicon solar cells

    Science.gov (United States)

    Bohra, Mihir H.

    Solar energy is a viable, rapidly growing and an important renewable alternative to other sources of energy generation because of its abundant supply and low manufacturing cost. Silicon still remains the major contributor for manufacturing solar cells accounting for 80% of the market share. Of this, single-crystal solar cells account for half of the share. Laboratory cells have demonstrated 25% efficiency; however, commercial cells have efficiencies of 16% - 20% resulting from a focus on implementation processes geared to rapid throughput and low cost, thereby reducing the energy pay-back time. An example would be the use of metal pastes which dissolve the dielectric during the firing process as opposed to lithographically defined contacts. With current trends of single-crystal silicon photovoltaic (PV) module prices down to 0.60/W, almost all other PV technologies are challenged to remain cost competitive. This presents a unique opportunity in revisiting the PV cell fabrication process and incorporating moderately more expensive IC process practices into PV manufacturing. While they may drive the cost toward a 1/W benchmark, there is substantial room to "experiment", leading to higher efficiencies which will help maintain the overall system cost. This work entails a turn-key process designed to provide a platform for rapid evaluation of novel materials and processes. A two-step lithographic process yielding a baseline 11% - 13% efficient cell is described. Results of three studies have shown improvements in solar cell output parameters due to the inclusion of a back-surface field implant, a higher emitter doping and also an additional RCA Clean.

  1. Surface recombination analysis in silicon-heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Barrio, R.; Gandia, J.J.; Carabe, J.; Gonzalez, N.; Torres, I. [CIEMAT, Madrid (Spain); Munoz, D.; Voz, C. [Universitat Politecnica de Catalunya, Barcelona (Spain)

    2010-02-15

    The origin of this work is the understanding of the correlation observed between efficiency and emitter-deposition temperature in single silicon-heterojunction solar cells prepared by depositing an n-doped hydrogenated-amorphous-silicon thin film onto a p-type crystalline-silicon wafer. In order to interpret these results, surface-recombination velocities have been determined by two methods, i.e. by fitting the current-voltage characteristics to a theoretical model and by means of the Quasi-Steady-State Photoconductance Technique (QSSPC). In addition, effective diffusion lengths have been estimated from internal quantum efficiencies. The analysis of these data has led to conclude that the performance of the cells studied is limited by back-surface recombination rather than by front-heterojunction quality. A 12%-efficient cell has been prepared by combining optimum emitter-deposition conditions with back-surface-field (BSF) formation by vacuum annealing of the back aluminium contact. This result has been achieved without using any transparent conductive oxide. (author)

  2. Recent developments in amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Beneking, C.; Rech, B.; Foelsch, J.; Wagner, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik

    1996-03-01

    Two examples of recent advances in the field of thin-film, amorphous hydrogenated silicon (a-Si:H) pin solar cells are described: the improved understanding and control of the p/i interface, and the improvement of wide-bandgap a-Si:H material deposited at low substrate temperature as absorber layer for cells with high stabilized open-circuit voltage. Stacked a-Si:H/a-Si:H cells incorporating these concepts exhibit less than 10% (relative) efficiency degradation and show stabilized efficiencies as high as 9 to 10% (modules 8 to 9%). The use of low-gap a-Si:H and its alloys like a-SiGe:H as bottom cell absorber materials in multi-bandgap stacked cells offers additional possibilities. The combination of a-Si:H based top cells with thin-film crystalline silicon-based bottom cells appears as a promising new trend. It offers the perspective to pass significantly beyond the present landmark of 10% module efficiency reached by the technology utilizing exclusively amorphous silicon-based absorber layers, while keeping its advantages of potentially low-cost production. (orig.) 47 refs.

  3. Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

    OpenAIRE

    Atteq ur Rehman; Soo Hong Lee

    2014-01-01

    Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thick...

  4. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  5. Wide-bandgap epitaxial heterojunction windows for silicon solar cells

    Science.gov (United States)

    Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

    1990-01-01

    It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

  6. High-efficient n-i-p thin-film silicon solar cells

    OpenAIRE

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar cells the interfaces between different layers are very important. In this thesis the influence of some important interfaces in the n-i-p configuration solar cells on the solar-cell performance has ...

  7. Chemical bath deposition for the fabrication of antireflective coating of spherical silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro [College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

    2006-12-15

    A CdS film as an antireflective (AR) coating has been successfully deposited on spherical silicon solar cells by chemical bath deposition, which is a novel deposition method of AR coatings for spherical silicon solar cells. The CBD method is a growth method in an aqueous solution and enables film formation for electronic devices with arbitrary shapes. The solar cell performance of the cell with the CdS film showed a 16% increase in short circuit current compared to that without an ARC. The result confirms that the CBD method is useful for the ARC fabrication of spherical silicon solar cells. (author)

  8. Novel deposition method of anti-reflective coating for spherical silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro [Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga, 525-8577 (Japan); Murozono, Mikio (Clean Venture 21 co.); Yamaguchi, Yukio (The University of Tokyo)

    2006-11-23

    The liquid-phase deposition (LPD) as a novel deposition method of anti-reflective coating (ARC) for spherical silicon solar cells has been proposed. The LPD is a growth method in aqueous solution and can deposit thin films with uniform coverage over a spherical surface. The solar cell performance of the spherical silicon solar cell with an ARC shows more than 10% increase in short-circuit current density compared to that without an ARC. The result confirms that the LPD method is useful for ARC fabrications of spherical silicon solar cells. (author)

  9. Thin tantalum-silicon-oxygen/tantalum-silicon-nitrogen films as high-efficiency humidity diffusion barriers for solar cell encapsulation

    International Nuclear Information System (INIS)

    Flexible thin-film solar cells require flexible encapsulation to protect the copper-indium-2 selenide (CIS) absorber layer from humidity and aggressive environmental influences. Tantalum-silicon-based diffusion barriers are currently a favorite material to prevent future semiconductor devices from copper diffusion. In this work tantalum-silicon-nitrogen (Ta-Si-N) and tantalum-silicon-oxygen (Ta-Si-O) films were investigated and optimized for thin-film solar cell encapsulation of next-generation flexible solar modules. CIS solar modules were coated with tantalum-based barrier layers. The performance of the thin-film barrier encapsulation was determined by measuring the remaining module efficiency after a 1000 h accelerated aging test. A significantly enhanced stability against humidity diffusion in comparison to non-encapsulated modules was reached with a reactively sputtered thin-film system consisting of 250 nm Ta-Si-O and 15 nm Ta-Si-N

  10. Silver Nanoparticle Enhanced Freestanding Thin-Film Silicon Solar Cells

    Science.gov (United States)

    Winans, Joshua David

    As the supply of fossil fuels diminishes in quantity the demand for alternative energy sources will consistently increase. Solar cells are an environmentally friendly and proven technology that suffer in sales due to a large upfront cost. In order to help facilitate the transition from fossil fuels to photovoltaics, module costs must be reduced to prices well below $1/Watt. Thin-film solar cells are more affordable because of the reduced materials costs, but lower in efficiency because less light is absorbed before passing through the cell. Silver nanoparticles placed at the front surface of the solar cell absorb and reradiate the energy of the light in ways such that more of the light ends being captured by the silicon. Silver nanoparticles can do this because they have free electron clouds that can take on the energy of an incident photon through collective action. This bulk action of the electrons is called a plasmon. This work begins by discussing the economics driving the need for reduced material use, and the pros and cons of taking this step. Next, the fundamental theory of light-matter interaction is briefly described followed by an introduction to the study of plasmonics. Following that we discuss a traditional method of silver nanoparticle formation and the initial experimental studies of their effects on the ability of thin-film silicon to absorb light. Then, Finite-Difference Time-Domain simulation software is used to simulate the effects of nanoparticle morphology and size on the scattering of light at the surface of the thin-film.

  11. Development of Solar Grade (SoG) Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Joyce, David B; Schmid, Frederick

    2008-01-18

    The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

  12. Analysis of Power Loss for Crystalline Silicon Solar Module during the Course of Encapsulation

    OpenAIRE

    Hong Yang; He Wang; Dingyue Cao; Dangmin Sun; Xiaobao Ju

    2015-01-01

    During the course of solar module encapsulation, the output power of crystalline silicon solar module is less than the sum of the maximum output power of the constituents because of power loss. So it is very important to investigate the power loss caused by encapsulation materials and module production process. In this paper, the power loss of crystalline silicon solar module is investigated by experiments systematically for the first time. It is found that the power loss is mainly caused by ...

  13. High efficiency hybrid silicon nanopillar-polymer solar cells.

    Science.gov (United States)

    Pudasaini, Pushpa Raj; Ruiz-Zepeda, Francisco; Sharma, Manisha; Elam, David; Ponce, Arturo; Ayon, Arturo A

    2013-10-01

    Recently, inorganic/organic hybrid solar cells have been considered as a viable alternative for low-cost photovoltaic devices because the Schottky junction between inorganic and organic materials can be formed employing low temperature processing methods. We present an efficient hybrid solar cell based on highly ordered silicon nanopillars (SiNPs) and poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS). The proposed device is formed by spin coating the organic polymer PEDOT:PSS on a SiNP array fabricated using metal assisted electroless chemical etching process. The characteristics of the hybrid solar cells are investigated as a function of SiNP height. A maximum power conversion efficiency (PCE) of 9.65% has been achieved for an optimized SiNP array hybrid solar cell with nanopillar height of 400 nm, despite the absence of a back surface field enhancement. The effect of an ultrathin atomic layer deposition (ALD), grown aluminum oxide (Al2O3), as a passivation layer (recombination barrier) has also been studied for the enhanced electrical performance of the device. With the inclusion of the ultrathin ALD deposited Al2O3 between the SiNP array textured surface and the PEDOT:PSS layer, the PCE of the fabricated device was observed to increase to 10.56%, which is ∼10% greater than the corresponding device without the Al2O3 layer. The device described herein is considered to be promising toward the realization of a low-cost, high-efficiency inorganic/organic hybrid solar cell. PMID:24032746

  14. Development of thin wraparound junction silicon solar cells

    Science.gov (United States)

    Ho, F.; Iles, P. A.

    1981-01-01

    The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

  15. Influence of texture feature size on spherical silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    HAYASHI Shota; MINEMOTO Takashi; TAKAKURA Hideyuki; HAMAKAWA Yoshihiro

    2006-01-01

    The effects of surface texturing on spherical silicon solar cells were investigated. Surface texturing for spherical Si solar cells was prepared by immersing p-type spherical Si crystals in KOH solution with stirring. Two kinds of texture feature sizes (1 and 5μm pyramids) were prepared by changing stirring speed. After fabrication through our baseline processes, these cells were evaluated by solar cell performance and external quantum efficiency. The cell with 1 and 5μm pyramids shows the short circuit current density ( Jsc ) value of 31.9 and 33.2 mA·cm-2 , which is 9% and 13% relative increase compared to the cell without texturing. Furthermore, the cell with 5 μm pyramids has a higher open-circuit voltage (0.589 V) than the cell with 1 μm pyramids (0.577 V). As a result, the conversion efficiency was improved from 11.4% for the cell without texturing to 12.1% for the cell with 5 μm pyramids.

  16. Progress in amorphous silicon solar cells produced by reactive sputtering

    Science.gov (United States)

    Moustakas, T. D.

    The photovoltaic properties of reactively sputtered amorphous silicon are reviewed and it is shown that efficient PIN solar cells can be fabricated by the method of sputtering. The photovoltaic properties of the intrinsic films correlate with their structural and compositional inhomogeneities. Hydrogen incorporation and small levels of phosphorus and boron impurities also affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. The optical and transport properties of the doped P and N-films were found to depend sensitively on the amount of hydrogen and boron or phosphorus incorporation into the films as well as on their degree of crystallinity. Combination of the best intrinsic and doped films leads to PIN solar cell structures generating J(sc) of 13 mA/sq cm and V(oc) of between 0.85 to 0.95 volts. The efficiency of these devices, 5 to 6 percent, is limited by the low FF, typically about 50 percent. As a further test to the potential of this technology efficient tandem solar cell structures were fabricated, and device design concepts, such as the incorporation of optically reflective back contacts were tested.

  17. Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

    2009-05-15

    In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

  18. Influence of Ring Oxidation-Induced Stack Faults on Efficiency in Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    ZHOU Chun-Lan; WANG Wen-Jing; LI Hai-Ling; ZHAO Lei; DIAO Hong-Wei; LI Xu-Dong

    2008-01-01

    @@ We observe a strong correlation between the ring oxidation-induced stack faults (OISF) formed in the course of phosphor diffusion and the efficiency of Czochralski-grown silicon solar cells. The main reason for ring-OISF formation and growth in substrate is the silicon oxidation and phosphorus diffusion process induced silicon self-interstitial point defect during POCl3 diffusion. The decreasing of minority carrier diffusion length in crystal silicon solar cell induced by ring-OISF defects is identified to be one of the major causes of efficiency loss.

  19. Reduction Bending of Thin Crystalline Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    SHEN Lan-xian; LIU Zu-ming; LIAO Hua; TU Jie-lei; DENG Shu-kang

    2009-01-01

    Reported are the results of reduction the bending of thin crystalline silicon solar ceils after printing and sintering of back electrode by changing the back electrode paste and adjusting the screen printing parameters without effecting the electrical properties of the cell. Theory and experiments showed that the bending of the cell is changed with its thickness of suhstrate, the thinner cell, the more serious bending. The bending of the cell is decreased with the thickness decrease of the back contact paste. The substrate with the thickness of 190μm printing with sheet aluminum paste shows a relatively lower bend compared with that of the substrate printing with ordinary aluminum paste, and the minimum bend is 0.55 mm which is reduced by52%.

  20. Advanced optical design of tandem micromorph silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Krc, Janez; Smole, Franc; Topic, Marko [Faculty of Electrical Engineering, Department of Electronics, University of Ljubljana, Trzaska 25, Si-1000 Ljubljana (Slovenia)

    2006-06-15

    The role of refractive index of an interlayer in micromorph silicon solar cell is analyzed by means of optical simulations. Significant increases in quantum efficiency and photocurrent of the top cell are revealed for small refractive indexes of the interlayer (n<2.0). At the same time a noticeable decrease in the performance of the bottom cell is observed. Optimization of thickness and refractive index of a single-layer antireflective coating (ARC) on glass is carried out in order to obtain maximal photocurrent either in the top or in the bottom cell. Moderate increases in photocurrents are obtained (up to 4%) for optimized ARC parameters. Potential thickness reductions of the absorber layers related to (1) an interlayer with small refractive index, (2) an optimal ARC and (3) enhanced light scattering are determined and compared. Among the three advanced optical designs, the greatest potential in thickness reduction (up to 50%) is associated with enhanced light scattering. ng. (author)

  1. Photovoltaic solar panels of crystalline silicon: Characterization and separation.

    Science.gov (United States)

    Dias, Pablo Ribeiro; Benevit, Mariana Gonçalves; Veit, Hugo Marcelo

    2016-03-01

    Photovoltaic panels have a limited lifespan and estimates show large amounts of solar modules will be discarded as electronic waste in a near future. In order to retrieve important raw materials, reduce production costs and environmental impacts, recycling such devices is important. Initially, this article investigates which silicon photovoltaic module's components are recyclable through their characterization using X-ray fluorescence, X-ray diffraction, energy dispersion spectroscopy and atomic absorption spectroscopy. Next, different separation methods are tested to favour further recycling processes. The glass was identified as soda-lime glass, the metallic filaments were identified as tin-lead coated copper, the panel cells were made of silicon and had silver filaments attached to it and the modules' frames were identified as aluminium, all of which are recyclable. Moreover, three different components segregation methods have been studied. Mechanical milling followed by sieving was able to separate silver from copper while chemical separation using sulphuric acid was able to detach the semiconductor material. A thermo gravimetric analysis was performed to evaluate the use of a pyrolysis step prior to the component's removal. The analysis showed all polymeric fractions present degrade at 500 °C.

  2. Photovoltaic solar panels of crystalline silicon: Characterization and separation.

    Science.gov (United States)

    Dias, Pablo Ribeiro; Benevit, Mariana Gonçalves; Veit, Hugo Marcelo

    2016-03-01

    Photovoltaic panels have a limited lifespan and estimates show large amounts of solar modules will be discarded as electronic waste in a near future. In order to retrieve important raw materials, reduce production costs and environmental impacts, recycling such devices is important. Initially, this article investigates which silicon photovoltaic module's components are recyclable through their characterization using X-ray fluorescence, X-ray diffraction, energy dispersion spectroscopy and atomic absorption spectroscopy. Next, different separation methods are tested to favour further recycling processes. The glass was identified as soda-lime glass, the metallic filaments were identified as tin-lead coated copper, the panel cells were made of silicon and had silver filaments attached to it and the modules' frames were identified as aluminium, all of which are recyclable. Moreover, three different components segregation methods have been studied. Mechanical milling followed by sieving was able to separate silver from copper while chemical separation using sulphuric acid was able to detach the semiconductor material. A thermo gravimetric analysis was performed to evaluate the use of a pyrolysis step prior to the component's removal. The analysis showed all polymeric fractions present degrade at 500 °C. PMID:26787682

  3. Study of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, H.; Mai, Y. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Wan, M. [Department of Chemistry and Material Science, Hunan Institute of Humanities, Science and Technology, Loudi 417000 (China); Gao, J.; Wang, Y.; He, T.; Feng, Y.; Yin, J.; Du, J.; Wang, J.; Sun, R. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China)

    2013-07-31

    In this study, the reflection properties of transparent conductive oxide (TCO) films i.e. aluminum doped zinc oxide (ZnO:Al) and boron doped zinc oxide (ZnO:B) films plus aluminum (Al) films or white polyvinyl butyral (PVB) foils, which are usually used as the combined back reflectors of thin film silicon solar cells, are investigated. Sputtered ZnO:Al films were etched in diluted hydrochloric acid (1%) to achieve rough surface structures while textured ZnO:B films were directly prepared by a low pressure chemical vapor deposition technique. It is found that the rough TCO/Al reflectors show a low total reflection, which is mainly due to the parasitic absorption by the surface plasmons at the rough TCO/Al interfaces as well as the absorption in the TCO films. Differently, the rough TCO/white PVB foil reflectors display a slightly high light reflection regardless of the influence of the rough interface without the excitation of surface plasmons. Thus, the TCO/white PVB foil back reflectors could be a good candidate with respect to light utilization when they are applied in thin film silicon solar cells. - Highlights: • White polyvinyl butyral and transparent conductive oxide materials are used. • The reflection properties of TCO/Al and TCO/white PVB foil reflectors are studied. • The ZnO:Al and ZnO:B films are used as two types of TCO materials. • TCO/white PVB foil reflector shows a high reflection compared to TCO/Al reflector.

  4. SUBSTRATE MATERIALS FOR POLY-CSiTF SOLAR CELLS:OPTIMIZATION OF SILICON SHEET FROM POWDER

    Institute of Scientific and Technical Information of China (English)

    Q. Ban; H. Shen; X.J. Wang; X.W. Zou; Z.C. Liang

    2005-01-01

    The optimization of silicon sheet from powder (SSP) technology as polycrystalline silicon thin film (poly-CSiTF) solar cells' substrate materials is studied by orthogonal design experimental method. Based on technological optimization of SSP prepared from electronic grade silicon powder, SSP solar cell devices with simple structure are prepared and the effect of SSP substrate is discussed. Up to now, the conversion efficiency of the prepared solar cells on low purity SSP substrate with fundamental structure has reached 8.25% (with area of 1 cm×1 cm).

  5. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    Science.gov (United States)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  6. Sinusoidal nanotextures for light management in silicon thin-film solar cells

    Science.gov (United States)

    Köppel, G.; Rech, B.; Becker, C.

    2016-04-01

    Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

  7. Modification of the properties of porous silicon for solar cells by hydrogenation

    OpenAIRE

    Єрохов, Валерій Юрійович; Дружинін, Анатолій Олександрович; Єрохова, Ольга Валерієвна

    2015-01-01

    The prospects of creating a solar cell with antireflection coating on porous silicon were shown, for which the process of electrochemical hydrogenation of porous silicon on p-type silicon substrates with a resistivity of 0.1...10 Om×sm and substrates with the formed emitter junction n+-p was studied. For the process of electrochemical hydrogenation of porous silicon at its cathodic polarization, potentiostatic current-voltage curves of the system Pt (anode) - electrolyte - «porous silicon/sil...

  8. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  9. Simulation of hetero-junction silicon solar cells with AMPS-1D

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, Norberto; Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D. F. (Mexico)

    2010-01-15

    Mono- and poly-crystalline silicon solar cell modules currently represent between 80% and 90% of the PV world market. The reasons are the stability, robustness and reliability of this kind of solar cells as compared to those of emerging technologies. Then, in the mid-term, silicon solar cells will continue playing an important role for their massive terrestrial application. One important approach is the development of silicon solar cells processed at low temperatures (less than 300 C) by depositing amorphous silicon layers with the purpose of passivating the silicon surface, and avoiding the degradation suffered by silicon when processed at temperatures above 800 C. This kind of solar cells is known as HIT cells (hetero-junction with an intrinsic thin amorphous layer) and are already produced commercially (Sanyo Ltd.), reaching efficiencies above 20%. In this work, HIT solar cells are simulated by means of AMPS-1D, which is a program developed at Pennsylvania State University. We shall discuss the modifications required by AMPS-1D for simulating this kind of structures since this program explicitly does not take into account interfaces with high interfacial density of states as occurs at amorphous-crystalline silicon hetero-junctions. (author)

  10. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  11. Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures

    Science.gov (United States)

    Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C.

    2016-01-01

    Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices. PMID:27671709

  12. In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

    Science.gov (United States)

    Buehlmann, P.; Bailat, J.; Dominé, D.; Billet, A.; Meillaud, F.; Feltrin, A.; Ballif, C.

    2007-10-01

    We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40V, fill factor=71.9%, and Jsc=12.1mA/cm2) is achieved with top cell, SOIR, and bottom cell thicknesses of 270, 95, and 1800nm, respectively.

  13. Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells

    Science.gov (United States)

    Cuony, P.; Marending, M.; Alexander, D. T. L.; Boccard, M.; Bugnon, G.; Despeisse, M.; Ballif, C.

    2010-11-01

    Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (μc-Si), when used as a p-type layer in μc-Si thin-film solar cells. We show that p-nc-SiOx with its particular nanostructure increases μc-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiOx reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases μc-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.

  14. Physics and technology of amorphous-crystalline heterostructure silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sark, Wilfried G.J.H.M. van [Utrecht Univ. (Netherlands). Copernicus Institute, Science Technology and Society; Roca, Francesco [Unita Tecnologie Portici, Napoli (Italy). ENEA - Agenzia Nazionale per le Nuove Tecnologie, l' Energia e lo Sviluppo Economico Sostenibile; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie (Germany). Inst. Silizium-Photovoltaik

    2012-07-01

    The challenge of developing photovoltaic (PV) technology to a cost-competitive alternative for established energy sources can be achieved using simple, high-throughput mass-production compatible processes. Issues to be addressed for large scale PV deployment in large power plants or in building integrated applications are enhancing the performance of solar energy systems by increasing solar cell efficiency, using low amounts of materials which are durable, stable, and abundant on earth, and reducing manufacturing and installation cost. Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both ''emitter'' and ''base-contact/back surface field'' on both sides of a thin crystalline silicon wafer-base (c-Si) where the photogenerated electrons and holes are generated; at the same time, a Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. (orig.)

  15. Prediction model for the diffusion length in silicon-based solar cells

    Institute of Scientific and Technical Information of China (English)

    Cheknane A; Benouaz T

    2009-01-01

    d to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.

  16. Development of thin film amorphous silicon oxide/microcrystalline silicon double-junction solar cells and their temperature dependence

    Energy Technology Data Exchange (ETDEWEB)

    Sriprapha, K.; Piromjit, C.; Limmanee, A.; Sritharathikhun, J. [Institute of Solar Energy Technology Development (SOLARTEC), National Science and Technology Development Agency (NSTDA), 111 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120 (Thailand)

    2011-01-15

    We have developed thin film silicon double-junction solar cells by using micromorph structure. Wide bandgap hydrogenated amorphous silicon oxide (a-SiO:H) film was used as an absorber layer of top cell in order to obtain solar cells with high open circuit voltage (V{sub oc}), which are attractive for the use in high temperature environment. All p, i and n layers were deposited on transparent conductive oxide (TCO) coated glass substrate by a 60 MHz-very-high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. The p-i-n-p-i-n double-junction solar cells were fabricated by varying the CO{sub 2} and H{sub 2} flow rate of i top layer in order to obtain the wide bandgap with good quality material, which deposited near the phase boundary between a-SiO:H and hydrogenated microcrystalline silicon oxide ({mu}c-SiO:H), where the high V{sub oc} can be expected. The typical a-SiO:H/{mu}c-Si:H solar cell showed the highest initial cell efficiency of 10.5%. The temperature coefficient (TC) of solar cells indicated that the values of TC for conversion efficiency ({eta}) of the double-junction solar cells were inversely proportional to the initial V{sub oc}, which corresponds to the bandgap of the top cells. The TC for {eta} of typical a-SiO:H/{mu}c-Si:H was -0.32%/ C, lower than the value of conventional a-Si:H/{mu}c-Si:H solar cell. Both the a-SiO:H/{mu}c-Si:H solar cell and the conventional solar cell showed the same light induced degradation ratio of about 20%. We concluded that the solar cells using wide bandgap a-SiO:H film in the top cells are promising for the use in high temperature regions. (author)

  17. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  18. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  19. Polymeric amorphous carbon as p-type window within amorphous silicon solar cells

    NARCIS (Netherlands)

    Khan, R.U.A.; Silva, S.R.P.; Van Swaaij, R.A.C.M.M.

    2003-01-01

    Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p

  20. The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

    NARCIS (Netherlands)

    Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

    2013-01-01

    Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxid

  1. A New Method to Measure Trap Characteristics of Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    MA Xun; LIU Zu-Ming; QU Sheng; WANG Shu-Rong; HAO Rui-Ting; LIAO Hua

    2011-01-01

    @@ A new method to measure trap characteristics in crystalline silicon solar cells is presented.Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region.Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050 nm with and without bias light.The effects of wavelength and intensity of bias light on the measurement results are also discussed.The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available.Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.%A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.

  2. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    OpenAIRE

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction solar cells and the role of dangling bond states in mediating or driving the degradation mechanism. The approach taken in this study has enabled has to examine how light induced degradation is aff...

  3. On the capacitance of crystalline silicon solar cells in steady state

    OpenAIRE

    BARRO, FABE IDRISSA; SANE, Moustapha; ZOUMA, BERNARD

    2015-01-01

    In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calculated. The motivation of this work are two-fold: to show base doping density and illumination effects on the capacitance of silicon solar cells, and to propose a determination technique for both dark capacitance and base doping density f...

  4. Final manufacturing process of front side metallisation on silicon solar cells using conventional and unconventional techniques:

    OpenAIRE

    Dobrzański, Leszek Adam; Drygała, Aleksandra; Musztyfaga, Małgorzata

    2013-01-01

    The paper presents the results of the investigation of the front electrode manufactured using two silver pastes (PV 145 manufactured by Du Pont and another based on nanopowder experimentally prepared) on monocrystalline silicon solar cells in order to reduce contact resistance. The aim of the paper was a comparison between a conventional and an unconventional method to improve the quality of forming electrodes of silicon solar cells. The Screen Printing (SP) method is the most widely used con...

  5. Final manufacturing process of front side metallisation on silicon solar cells using conventional and unconventional techniques

    OpenAIRE

    Dobrzański, Leszek A.; Musztyfaga, Małgorzata; Drygała, Aleksandra

    2015-01-01

    The paper presents the results of the investigation of the front electrode manufactured using two silver pastes (PV 145 manufactured by Du Pont and another based on nanopowder experimentally prepared) on monocrystalline silicon solar cells in order to reduce contact resistance. The aim of the paper was a comparison between a conventional and an unconventional method to improve the quality of forming electrodes of silicon solar cells. The Screen Printing (SP) method is the most widely used con...

  6. Effect of the front electrode metallisation process on electrical parameters of a silicon solar cell

    OpenAIRE

    M. Musztyfaga; L.A. Dobrzański

    2011-01-01

    Purpose: This paper shows that the laser micro-treatment of the silicon elements of solar cells with the different morphology of monocrystalline silicon, including the selective laser sintering of the front electrode to its surface using the CO2 laser, improves the quality by minimising the resistance of a joint between the electrode and the substrate. The influence of the properties achieved for the front electrode on the electrical properties of solar cells was assessed. A front electrode o...

  7. Technological perspectives of silicone heat transfer fluids for concentrated solar power

    OpenAIRE

    Jung, Christian; Dersch, Jürgen; Nietsch, Anke; Senholdt, Marion

    2015-01-01

    Silicone based heat transfer fluids exhibit interesting properties for the application in solar thermal power plants like high thermal stability, very low freezing points and high environmental acceptability. In this paper, a new silicone based HTF (HELISOL® from Wacker Chemie AG) is investigated experimentally and economically in comparison to the eutectic mixture of biphenyl and diphenyl oxide which is currently the most important fluid for the heat transfer in solar thermal parabolic po...

  8. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deckers, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium); Bourgeois, E. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Jivanescu, M. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Abass, A. [Photonics Research Group (INTEC), Ghent University-imec, Sint-Pietersnieuwstraat 41, B-9000 Ghent (Belgium); Van Gestel, D.; Van Nieuwenhuysen, K.; Douhard, B. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); D' Haen, J.; Nesladek, M.; Manca, J. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Gordon, I.; Bender, H. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); Stesmans, A. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Mertens, R.; Poortmans, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium)

    2015-03-31

    We have investigated fine grained polycrystalline silicon thin films grown by direct chemical vapor deposition on oxidized silicon substrates. More specifically, we analyze the influence of the doping type on the properties of this model polycrystalline silicon material. This includes an investigation of defect passivation and benchmarking of minority carrier properties. In our investigation, we use a variety of characterization techniques to probe the properties of the investigated polycrystalline silicon thin films, including Fourier Transform Photoelectron Spectroscopy, Electron Spin Resonance, Conductivity Activation, and Suns-Voc measurements. Amphoteric silicon dangling bond defects are identified as the most prominent defect type present in these layers. They are the primary recombination center in the relatively lowly doped polysilicon thin films at the heart of the current investigation. In contrast with the case of solar cells based on Czochralski silicon or multicrystalline silicon wafers, we conclude that no benefit is found to be associated with the use of n-type dopants over p-type dopants in the active absorber of the investigated polycrystalline silicon thin-film solar cells. - Highlights: • Comparison of n- and p-type absorbers for thin-film poly-Si solar cells • Extensive characterization of the investigated layers' characteristics • Literature review pertaining the use of n-type and p-type dopants in silicon.

  9. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    Science.gov (United States)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  10. Temperature dependence of hydrogenated amorphous silicon solar cell performances

    Science.gov (United States)

    Riesen, Y.; Stuckelberger, M.; Haug, F.-J.; Ballif, C.; Wyrsch, N.

    2016-01-01

    Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energy yield, we measured the temperature and irradiance dependence of the maximum power output (Pmpp), the fill factor (FF), the short-circuit current density (Jsc), and the open-circuit voltage (Voc) for four series of cells fabricated with different deposition conditions. The parameters varied during plasma-enhanced chemical vapor deposition (PE-CVD) were the power and frequency of the PE-CVD generator, the hydrogen-to-silane dilution during deposition of the intrinsic absorber layer (i-layer), and the thicknesses of the a-Si:H i-layer and p-type hydrogenated amorphous silicon carbide layer. The results show that the temperature coefficient of the Voc generally varies linearly with the Voc value. The Jsc increases linearly with temperature mainly due to temperature-induced bandgap reduction and reduced recombination. The FF temperature dependence is not linear and reaches a maximum at temperatures between 15 °C and 80 °C. Numerical simulations show that this behavior is due to a more positive space-charge induced by the photogenerated holes in the p-layer and to a recombination decrease with temperature. Due to the FF(T) behavior, the Pmpp (T) curves also have a maximum, but at a lower temperature. Moreover, for most series, the cells with the highest power output at STC also have the best energy yield. However, the Pmpp (T) curves of two cells with different i-layer thicknesses cross each other in the operating cell temperature range, indicating that the cell with the highest power output could, for instance, have a lower energy yield than the other cell. A simple energy-yield simulation for the light-soaked and annealed states shows that for Neuchâtel (Switzerland) the best cell at STC also has the best energy

  11. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  12. Investigation of the Relationship between Reverse Current of Crystalline Silicon Solar Cells and Conduction of Bypass Diode

    Directory of Open Access Journals (Sweden)

    Hong Yang

    2012-01-01

    Full Text Available In the process of crystalline silicon solar cells production, there exist some solar cells whose reverse current is larger than 1.0 A because of silicon materials and process. If such solar cells are encapsulated into solar modules, hot-spot phenomenon will emerge in use. In this paper, the effect of reverse current on reliability of crystalline silicon solar modules was investigated. Based on the experiments, considering the different shaded rate of cells, the relation between reverse current of crystalline silicon solar cells and conduction of bypass diode was investigated for the first time. To avoid formation of hot spots and failure of solar modules, the reverse current should be smaller than 1.0 A for 125 mm × 125 mm monocrystalline silicon solar cells when the bias voltage is at −12 V.

  13. Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells

    OpenAIRE

    Varache, Renaud

    2012-01-01

    The interface between amorphous silicon (a-Si:H) and crystalline silicon (c-Si) is the building block of high efficiency solar cells based on low temperature fabrication processes. Three properties of the interface determine the performance of silicon heterojunction solar cells: band offsets between a-Si:H and c-Si, interface defects and band bending in c-Si. These three points are addressed in this thesis.First, an analytical model for the calculation of the band bending in c-Si is developed...

  14. Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2010-03-15

    Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

  15. Ultrasonic seam welding on thin silicon solar cells

    Science.gov (United States)

    Stofel, E. J.

    1982-01-01

    The ultrathin silicon solar cell has progressed to where it is a serious candidate for future light weight or radiation tolerant spacecraft. The ultrasonic method of producing welds was found to be satisfactory. These ultrathin cells could be handled without breakage in a semiautomated welding machine. This is a prototype of a machine capable of production rates sufficiently large to support spacecraft array assembly needs. For comparative purposes, this project also welded a variety of cells with thicknesses up to 0.23 mm as well as the 0.07 mm ultrathin cells. There was no electrical degradation in any cells. The mechanical pull strength of welds on the thick cells was excellent when using a large welding force. The mechanical strength of welds on thin cells was less since only a small welding force could be used without cracking these cells. Even so, the strength of welds on thin cells appears adequate for array application. The ability of such welds to survive multiyear, near Earth orbit thermal cycles needs to be demonstrated.

  16. Potential of optical design in tandem micromorph silicon solar cells

    Science.gov (United States)

    Krc, J.; Campa, A.; Smole, F.; Topic, M.

    2006-04-01

    The potential of three advanced optical designs in tandem micromorph silicon solar cells are analysed by means of optical simulations: enhanced light scattering, intermediate reflector (interlayer) and antireflective coating (ARC) on glass. The effects on quantum efficiency, QE, and short circuit current density, J SC, of the top and bottom cell are investigated. In case of enhanced light scattering, the role of haze parameter and angular distribution function of scattered light is analysed separately. High haze parameter improves light trapping in top and bottom cell. However, the improvement in QE and J SC of the bottom cell is limited at higher haze parameters due to increased absorption in top cell and increased optical losses in realistic textured ZnO/Ag back contact. Broad ADF plays an important role for improving the performances of both, top and bottom cell. The role of refractive index of an interlayer between top and bottom cell is analysed. Significant increases in QE and J SC of the top cell are revealed for small refractive indexes of the interlayer (n cell is observed. Optimisation of thickness and refractive index of a single-layer ARC on glass is carried out in order to obtain maximal J SC either in top or in bottom cell. Moderate increases in J SC and QE are obtained for optimised ARC parameters. Among the three optical designs, the greatest potential, considering the improvements in both cells, is revealed for enhanced light scattering.

  17. Light-trapping design for thin-film silicon-perovskite tandem solar cells

    Science.gov (United States)

    Foster, Stephen; John, Sajeev

    2016-09-01

    Using finite-difference time-domain simulations, we investigate the optical properties of tandem silicon/perovskite solar cells with a photonic crystal architecture, consisting of a square-lattice array of inverted pyramids with a center-to-center spacing of 2.5 μm. We demonstrate that near-perfect light-trapping and absorption can be achieved over the 300-1100 nm wavelength range with this architecture, using less than 10 μm (equivalent bulk thickness) of crystalline silicon. Using a one-diode model, we obtain projected efficiencies of over 30% for the two-terminal tandem cell under a current-matching condition, well beyond the current record for single-junction silicon solar cells. The architecture is amenable to mass fabrication through wet-etching and uses a fraction of the silicon of traditional designs, making it an attractive alternative to other silicon-perovskite tandem designs.

  18. Optical simulation of the role of reflecting interlayers in tandem micromorph silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Krc, J.; Smole, F.; Topic, M. [Ljubljana Univ. (Slovenia). Faculty of Electrical Engineering

    2005-04-01

    The role of a reflecting interlayer in micromorph silicon thin-film solar cells is investigated from the optical point of view. Detailed optical modelling and simulation are used to study the effects of different interlayers on quantum efficiency and short-circuit current of the top, amorphous silicon, and bottom, microcrystalline silicon, solar cell. The role of refractive index of interlayers on quantum efficiency of the top and bottom cell is analysed. Critical issues, such as enhanced total reflection from the solar cell and decreased quantum efficiency of the bottom cell due to interlayer are studied. Besides the single interlayer concept, double and triple interlayer stacks are investigated and improvements in comparison to the single ZnO interlayer are demonstrated. Potential thickness reductions of the top amorphous silicon cell related to different interlayers are presented. (Author)

  19. Effect of light trapping in an amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Iftiquar, S.M., E-mail: iftiquar@skku.edu [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Juyeon; Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jaehyun; Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jinjoo [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Bong, Sungjae [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Sunbo [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-07-31

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V{sub oc}) of 0.87, 0.90 V, short circuit current densities (J{sub sc}) of 14.2, 15.36 mA/cm{sup 2} respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d{sub i}) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d{sub i} while the V{sub oc} and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d{sub i} = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J{sub sc} and red response of the external quantum efficiency to 16.6 mA/cm{sup 2} and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J{sub sc} increases and V{sub oc} decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J{sub sc} improved from 15.4 mA/cm{sup 2} to 16.6 mA/cm{sup 2} due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE.

  20. Effect of light trapping in an amorphous silicon solar cell

    International Nuclear Information System (INIS)

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (Voc) of 0.87, 0.90 V, short circuit current densities (Jsc) of 14.2, 15.36 mA/cm2 respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (di) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with di while the Voc and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when di = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in Jsc and red response of the external quantum efficiency to 16.6 mA/cm2 and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • Jsc increases and Voc decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • Jsc improved from 15.4 mA/cm2 to 16.6 mA/cm2 due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE

  1. Fabrication and doping methods for silicon nano- and micropillar arrays for solar cell applications: a review

    NARCIS (Netherlands)

    Elbersen, R.; Vijselaar, W.J.C.; Tiggelaar, R.M.; Gardeniers, J.G.E.; Huskens, J.

    2015-01-01

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High den

  2. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  3. Evaluation and verification of epitaxial process sequence for silicon solar cell production

    Science.gov (United States)

    Redfield, D.

    1981-01-01

    The applicability of solar cell and module processing sequences, to be used on lower cost epitaxial silicon wafers was evaluated. The extent to which the process sequences perform effectively when applied to film solar cells formed by epitaxial deposition of Si on potentially inexpensive substrates of upgraded metallurgical grade Si is examined. It is concluded that these substrates are satisfactory in their cell performance.

  4. Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment

    Energy Technology Data Exchange (ETDEWEB)

    Derbali, L., E-mail: derbali.lotfi1@yahoo.fr [Photovoltaïc laboratory, Research and Technology Center of Energy, Technopôle de Borj-Cédria, BP 95 Hammam-Lif 2050 (Tunisia); Ezzaouia, H. [Photovoltaïc laboratory, Research and Technology Center of Energy, Technopôle de Borj-Cédria, BP 95 Hammam-Lif 2050 (Tunisia)

    2013-04-15

    In this paper, we will report the enhancement of the conversion efficiency of multicrystalline silicon solar cells after coating the front surface with a porous silicon layer treated with vanadium oxide. The incorporation of vanadium oxide into the porous silicon (PS) structure, followed by a thermal treatment under oxygen ambient, leads to an important decrease of the surface reflectivity, a significant enhancement of the effective minority carrier lifetime (τ{sub eff}) and a significant enhancement of the photoluminescence (PL) of the PS structure. We Obtained a noticeable increase of (τ{sub eff}) from 3.11 μs to 134.74 μs and the surface recombination velocity (S{sub eff}) have decreased from 8441 cm s{sup −1} to 195 cm s{sup −1}. The reflectivity spectra of obtained films, performed in the 300–1200 nm wavelength range, show an important decrease of the average reflectivity from 40% to 5%. We notice a significant improvement of the internal quantum efficiency (IQE) in the used multicrystalline silicon substrates. Results are analyzed and compared to those carried out on a reference (untreated) sample. The electrical properties of the treated silicon solar cells were improved noticeably as regard to the reference (untreated) sample.

  5. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    International Nuclear Information System (INIS)

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cell or a CH3NH3PbI3 perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells

  6. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    Energy Technology Data Exchange (ETDEWEB)

    Uzu, Hisashi, E-mail: Hisashi.Uzu@kaneka.co.jp, E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi; Nakano, Kunihiro; Meguro, Tomomi; Yamamoto, Kenji [Kaneka Corporation, 5-1-1, Torikai-Nishi, Settsu, Osaka 566-0072 (Japan); Hernández, José Luis [Kaneka Belgium N.V., Nijverheidsstraat 16, 2260 Westerlo-Oevel (Belgium); Kim, Hui-Seon; Park, Nam-Gyu, E-mail: Hisashi.Uzu@kaneka.co.jp, E-mail: npark@skku.edu [School of Chemical Engineering and Department of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2015-01-05

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cell or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.

  7. Theoretical Study of the Influence of Irradiation on a Silicon Solar Cell Under Multispectral Illumination

    Directory of Open Access Journals (Sweden)

    M.A. Ould El Moujtaba

    2012-12-01

    Full Text Available This study aims to demonstrate the effects of particles irradiation on the silicon solar cell properties. A theoretical study of a silicon solar cell under multispectral illumination and particles (electrons, protons… irradiationis presented. The relative density is presented and we show that the space charge region width depend on the irradiation parameters (energy and nature especially. We also pointed out the influence of the irradiation on the following parameters: the photocurrent density, the open circuit voltage, the fill factor, the conversion efficiency, the shunt and series resistances and the diffusion capacitance of the solar cell.

  8. Recent Optical and SEM Characterization of Genesis Solar Wind Concentrator Diamond on Silicon Collector

    Science.gov (United States)

    Allton, Judith H.; Rodriquez, M. C.; Burkett, P. J.; Ross, D. K.; Gonzalez, C. P.; McNamara, K. M.

    2013-01-01

    One of the 4 Genesis solar wind concentrator collectors was a silicon substrate coated with diamond-like carbon (DLC) in which to capture solar wind. This material was designed for analysis of solar nitrogen and noble gases [1, 2]. This particular collector fractured during landing, but about 80% of the surface was recovered, including a large piece which was subdivided in 2012 [3, 4, 5]. The optical and SEM imaging and analysis described below supports the subdivision and allocation of the diamond-on-silicon (DOS) concentrator collector.

  9. A study on the key factors affecting the electronic properties of monocrystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ji-cheng; CHEN Yong-min; LI Li; LI Fei; ZHAO Bao-xing

    2009-01-01

    The model of monocrystalline silicon solar cells is established, and the effects of wafer parameters, such as the p-Si (100) substrate thickness, the defect density, and the doping concentration, on the electronic properties of monocrystalline silicon solar cells are analyzed. The results indicate that the solar cells with an A1 back-surface-field will have good electronic properties when the wafers meet the following three conditions: (i) the defect density is less than 1.0×1011 cm-3; (ii) the substrate thickness is in the range of 100 μm to 200 μm.

  10. The effect of radiation intensity on diode characteristics of silicon solar cells

    International Nuclear Information System (INIS)

    In order to explore electro-physical properties of silicon solar cells, diode characteristics and ohmic properties of Al - Ni / (n+) - Si contact has been studied. Diode characteristics have been studied on a wide temperature range and on various radiation intensity, so this gives us the ability to observe the effect of the radiation and the temperature on electro-physical properties of under study solar cells. Volt-Ampere characteristics of the ohmic contacts of the silicon solar cells have been presented. As well as contact resistance and mechanism of current transmission has been identified.

  11. Silicon-on-ceramic coating process. Silicon sheet growth development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Silicon Solar Array Project. Quarterly report No. 8, December 28, 1977--March 28, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P.W. Zook, J.D.; Heaps, J D; Maclolek, R B; Koepke, B; Butter, C D; Schult, S B

    1978-04-20

    A research program to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon is described. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 12 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A dip-coating method for putting silicon on ceramic (SOC) has been shown to produce solar-cell-quality sheet silicon. This method and a continuous coating process also being investigated have excellent scale-up potential which offers an outstanding cost-effective way to manufacture large-area solar cells. A variety of ceramic materials have been dip-coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO/sub 2/ best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm/sup 2/ in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Solar cells with areas from 1 to 10 cm/sup 2/ have been fabricated from material withas-grown surface. Recently, an antireflection (AR) coating has been applied to SOC cells. Conversion efficiencies greater than 9% have been achieved without optimizing series resistance characteristics. Such cells typically have open-circuit voltages and short-circuit current densities of 0.51 V and 20 mA/cm/sup 2/, respectively.

  12. Design and optimization of ultrathin crystalline silicon solar cells using an efficient back reflector

    Directory of Open Access Journals (Sweden)

    S. Saravanan

    2015-05-01

    Full Text Available Thin film solar cells are cheaper but having low absorption in longer wavelength and hence, an effective light trapping mechanism is essential. In this work, we proposed an ultrathin crystalline silicon solar cell which showed extraordinary performance due to enhanced light absorption in visible and infrared part of solar spectrum. Various designing parameters such as number of distributed Bragg reflector (DBR pairs, anti-reflection layer thickness, grating thickness, active layer thickness, grating duty cycle and period were optimized for the optimal performance of solar cell. An ultrathin silicon solar cell with 40 nm active layer could produce an enhancement in cell efficiency ∼15 % and current density ∼23 mA/cm2. This design approach would be useful for the realization of new generation of solar cells with reduced active layer thickness.

  13. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Science.gov (United States)

    Fortmann, C. M.; Hegedus, S. S.

    1992-12-01

    Results and conclusions obtained during the investigation of amorphous silicon, amorphous silicon based alloy materials, and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-Si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  14. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. (Institute of Energy Conversion, Newark, DE (United States))

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  15. MIS and PN junction solar cells on thin-film polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  16. Numerical simulations for the effiency improvement of hybrid dye-microcrystalline silicon pin-solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Burdorf, Sven; Bauer, Gottfried Heinrich; Brueggemann, Rudolf [Institut fuer Physik, Carl von Ossietzky Universitaet, Oldenburg (Germany)

    2011-07-01

    Hybrid solar cells consisting of dye sensitizers incorporated in the i-layer of microcrystalline silicon pin solar cell have been proposed and even recently processed. The dye sensitizer molecules are embedded in the matrix and enhance the overall absorption of the dye-matrix system due to their high absorption coefficient in the spectral range interesting for photovoltaic applications. However, the charge transport properties of dyes are quite poor. Microcrystalline silicon on the other hand has acceptable charge transport properties, while the absorption, given a layer thickness in the micron range, is relatively poor. This contribution investigates the effiency improvement of hybrid dye-microcrystalline solar cells compared to pure microcrystalline solar cells by simulation. The results indicate that, under optimal conditions, the effiency can be improved by more than 20 % compared to a pure microcrystalline silicon cell. The thickness reduction for the hybrid system can be as large as 50 % for the same effiency.

  17. Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Papet, P.; Nichiporuk, O.; Kaminski, A.; Rozier, Y.; Kraiem, J.; Lelievre, J.-F.; Chaumartin, A.; Fave, A.; Lemiti, M. [Laboratoire de Physique de la Matiere, UMR-CNRS 5511, Institut National des Sciences Appliquees de Lyon, Bat Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2006-09-22

    High-efficiency silicon solar cells need a textured front surface to reduce reflectance and to improve light trapping. Texturing of monocrystalline silicon is usually done in alkaline solutions. These solutions are cheaper, but are pollutants of silicon technologies. In this paper, we investigate an alternative solution containing tetramethyl ammonium hydroxide ((CH{sub 3}){sub 4}NOH, TMAH ). This study shows the influence of different parameters (concentration, agitation, duration and temperature), to obtain uniform and reliable pyramidal texturization on different silicon surfaces (as cut, etched and polished). Under optimized conditions, TMAH-textured surface led to an average weighted reflectance of 13%, without any antireflection coating independent of the initial silicon surface. Unlike potassium hydroxide (KOH) texturing solution, characterization of silicon oxide layer contamination after TMAH texturing process revealed no pollution, and passivation is less affected by TMAH than by KOH texturization. (author)

  18. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    Science.gov (United States)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  19. Incidence angle and spectral effects on vertical junction silicon solar cell capacitance

    OpenAIRE

    SANE, MOUSTAPHA; ŞAHİN, Gökhan; BARRO, Fabé Idrissa; MAIGA, Amadou Seidou

    2014-01-01

    The aim of this work is to present a theoretical study of a vertical junction silicon solar cell under monochromatic illumination. By solving the continuity equation and using a one-dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both illumination wavelength and incidence angle on the solar cell capaci...

  20. Black silicon laser-doped selective emitter solar cell with 18.1% efficiency

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Li, Hongzhao; To, Alexander;

    2016-01-01

    We report fabrication of nanostructured, laser-doped selective emitter (LDSE) silicon solar cells with power conversion efficiency of 18.1% and a fill factor (FF) of 80.1%. The nanostructured solar cells were realized through a single step, mask-less, scalable reactive ion etch (RIE) texturing......-texturing as well as the LDSE process, we consider this specific combination a promising candidate for a cost-efficient process for future Si solar cells....

  1. INVESTIGATION ON SILICON SOLAR CELL CAPACITANCE AND ITS DEPENDENCE ON BOTH TEMPERATURE AND INCIDENCE ANGLE

    OpenAIRE

    Moustapha Sané

    2014-01-01

    The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell ca...

  2. Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial

    Energy Technology Data Exchange (ETDEWEB)

    Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

    2004-11-08

    In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

  3. Novel duplex vapor-electrochemical method for silicon solar cells

    Science.gov (United States)

    Kapur, V. K.; Nanis, L.; Sanjurjo, A.

    1977-01-01

    Silicon was produced by alternate pulse feeding of the reactants SiF4 gas and liquid sodium. The average temperature in the reactor could be controlled, by regulating the amount of reactant in each pulse. Silicon tetrafluoride gas was analyzed by mass spectrometry to determine the nature and amount of contained volatile impurities which included silicon oxyfluorides, sulfur oxyfluorides, and sulfur dioxide. Sodium metal was analyzed by emission spectrography, and it was found to contain only calcium and copper as impurities.

  4. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  5. Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

    2010-12-15

    The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

  6. Hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase and usage as an intermediate reflector in thin-film silicon solar cells

    OpenAIRE

    Lambertz, A.; Grundler, T.; F. Finger

    2011-01-01

    To further improve the stability of amorphous/microcrystalline silicon (a-Si:H/mu c-Si:H) tandem solar cells, it is important to reduce the thickness of the a-Si: H top cell. This can be achieved by introduction of an intermediate reflector between the a-Si: H top and the mu c-Si: H bottom cell which reflects light back into the a-Si: H cell and thus, increases its photocurrent at possibly reduced thickness. Microcrystalline silicon oxide (mu c-SiOx:H) is used for this purpose and the trade-o...

  7. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area on the graphite substrate. The optical properties of the SiNx/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiNx/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiNx/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  8. Laser process for extended silicon thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hessmann, M.T., E-mail: hessmann@zae.uni-erlangen.de [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Kunz, T.; Burkert, I.; Gawehns, N. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Schaefer, L.; Frick, T.; Schmidt, M. [Bayerisches Laserzentrum, Konrad-Zuse-Str 2-6, 91052 Erlangen (Germany); Meidel, B. [Schott Solar AG, Carl-Zeiss-Strasse 4, 63755 Alzenau (Germany); Auer, R. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Brabec, C.J. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Chair VI - Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen (Germany)

    2011-10-31

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  9. Silicon solar cells reaching the efficiency limits: from simple to complex modelling

    Science.gov (United States)

    Kowalczewski, Piotr; Redorici, Lisa; Bozzola, Angelo; Andreani, Lucio Claudio

    2016-05-01

    Numerical modelling is pivotal in the development of high efficiency solar cells. In this contribution we present different approaches to model the solar cell performance: the diode equation, a generalization of the well-known Hovel model, and a complete device modelling. In all three approaches we implement a Lambertian light trapping, which is often considered as a benchmark for the optical design of solar cells. We quantify the range of parameters for which all three approaches give the same results, and highlight the advantages and limitations of different models. Using these methods we calculate the efficiency limits of single-junction crystalline silicon solar cells in a wide range of cell thickness. We find that silicon solar cells close to the efficiency limits operate in the high-injection (rather than in the low-injection) regime. In such a regime, surface recombination can have an unexpectedly large effect on cells with the absorber thickness lower than a few tens of microns. Finally, we calculate the limiting efficiency of tandem silicon-perovskite solar cells, and we determine the optimal thickness of the bottom silicon cell for different band gaps of the perovskite material.

  10. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  11. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  12. Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.

    Science.gov (United States)

    Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra

    2016-07-29

    Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade

  13. Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future

    Science.gov (United States)

    Bardhan Roy, Arijit; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Minhaz Hossain, S.; Kundu, Avra

    2016-07-01

    Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

  14. Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future

    Science.gov (United States)

    Bardhan Roy, Arijit; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Minhaz Hossain, S.; Kundu, Avra

    2016-07-01

    Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon–electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley–Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

  15. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    OpenAIRE

    Liu, Y

    2010-01-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modu...

  16. Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-GD technique

    OpenAIRE

    Meier, Johannes; Vallat-Sauvain, Evelyne; Dubail, S.; Kroll, U.; Dubail, J.; Golay, S.; Feitknecht, Luc; Torres, Pedro; Faÿ, Sylvie; Fischer, D.; Shah, Arvind

    2008-01-01

    Hydrogenated microcrystalline silicon prepared at low temperatures by the glow discharge technique is examined here with respect to its role as a new thin-film photovoltaic absorber material. XRD and TEM characterisations reveal that microcrystalline silicon is a semiconductor with a very complex morphology. Microcrystalline p–i–n cells with open-circuit voltages of up to 560–580 mV could be prepared. “Micromorph” tandem solar cells show under outdoor conditions higher short-circuit currents ...

  17. Micromorph silicon tandem solar cells with fully integrated 3D photonic crystal intermediate reflectors

    Science.gov (United States)

    Üpping, J.; Bielawny, A.; Fahr, S.; Rockstuhl, C.; Lederer, F.; Steidl, L.; Zentel, R.; Beckers, T.; Lambertz, A.; Carius, R.; Wehrspohn, R. B.

    2010-05-01

    A 3D photonic intermediate reflector for textured micromorph silicon tandem solar cells has been investigated. In thin-film silicon tandem solar cells consisting of amorphous and microcrystalline silicon with two junctions of a-Si/c-Si, efficiency enhancements can be achieved by increasing the current density in the a-Si top cell providing an optimized current matching at high current densities. For an ideal photon-management between top and bottom cell, a spectrally-selective intermediate reflective layer (IRL) is necessary. We present the first fully-integrated 3D photonic thin-film IRL device incorporated on a planar substrate. Using a ZnO inverted opal structure the external quantum efficiency of the top cell in the spectral region of interest could be enhanced. As an outlook we present the design and the preparation of a 3D self organized photonic crystal structure in a textured micromorph tandem solar cell.

  18. Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

    Science.gov (United States)

    Hirsch, Jens; Gaudig, Maria; Bernhard, Norbert; Lausch, Dominik

    2016-06-01

    The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF6 and O2 are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 1015 cm-3 minority carrier density (MCD) after an atomic layer deposition (ALD) with Al2O3. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique to substitute the industrial state of the art wet chemical textures in the solar cell mass production.

  19. Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Atteq ur Rehman

    2014-02-01

    Full Text Available Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

  20. Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects.

    Science.gov (United States)

    Li, Xinming; Lv, Zheng; Zhu, Hongwei

    2015-11-01

    In the last few decades, advances and breakthroughs of carbon materials have been witnessed in both scientific fundamentals and potential applications. The combination of carbon materials with traditional silicon semiconductors to fabricate solar cells has been a promising field of carbon science. The power conversion efficiency has reached 15-17% with an astonishing speed, and the diversity of systems stimulates interest in further research. Here, the historical development and state-of-the-art carbon/silicon heterojunction solar cells are covered. Firstly, the basic concept and mechanism of carbon/silicon solar cells are introduced with a specific focus on solar cells assembled with carbon nanotubes and graphene due to their unique structures and properties. Then, several key technologies with special electrical and optical designs are introduced to improve the cell performance, such as chemical doping, interface passivation, anti-reflection coatings, and textured surfaces. Finally, potential pathways and opportunities based on the carbon/silicon heterojunction are envisaged. The aspects discussed here may enable researchers to better understand the photovoltaic effect of carbon/silicon heterojunctions and to optimize the design of graphene-based photodevices for a wide range of applications. PMID:26422457

  1. High velocity continuous-flow reactor for the production of solar grade silicon

    Science.gov (United States)

    Woerner, L.

    1977-01-01

    The feasibility of a high volume, high velocity continuous reduction reactor as an economical means of producing solar grade silicon was tested. Bromosilanes and hydrogen were used as the feedstocks for the reactor along with preheated silicon particles which function both as nucleation and deposition sites. A complete reactor system was designed and fabricated. Initial preheating studies have shown the stability of tetrabromosilane to being heated as well as the ability to preheat hydrogen to the desired temperature range. Several test runs were made and some silicon was obtained from runs carried out at temperatures in excess of 1180 K.

  2. Development of a high voltage top cell for silicon thin-film solar cells

    OpenAIRE

    Walder , Cordula

    2015-01-01

    he development of multijunction solar cells is a promising approach to increase the efficiency of silicon thin-film photovoltaics. The objective of this work is to investigate how to optimise a high bandgap top cell and if the use of hydrogenated amorphous silicon alloys (a-SiO:H, a-SiC:H) as absorber materials is reasonable. According to the simulation results of this work, hydrogenated amorphous silicon (a-Si:H) is the preferable top cell absorber material for a triple cell. However, for a ...

  3. Interface Engineering of High Efficiency Organic-Silicon Heterojunction Solar Cells.

    Science.gov (United States)

    Yang, Lixia; Liu, Yaoping; Chen, Wei; Wang, Yan; Liang, Huili; Mei, Zengxia; Kuznetsov, Andrej; Du, Xiaolong

    2016-01-13

    Insufficient interface conformity is a challenge faced in hybrid organic-silicon heterojunction solar cells because of using conventional pyramid antireflection texturing provoking the porosity of interface. In this study, we tested alternative textures, in particular rounded pyramids and inverted pyramids to compare the performance. It was remarkably improved delivering 7.61%, 8.91% and 10.04% efficiency employing conventional, rounded, and inverted pyramids, respectively. The result was interpreted in terms of gradually improving conformity of the Ag/organic/silicon interface, together with the gradually decreasing serial resistance. Altogether, the present data may guide further efforts arising the interface engineering for mastering high efficient heterojunction solar cells. PMID:26701061

  4. Optimization of the emitter region and the metal grid of a concentrator silicon solar cell

    Institute of Scientific and Technical Information of China (English)

    Xing Yupeng; Han Peide; Fan Yujie; Wang Shuai; Liang Peng; Ye Zhou; Hu Shaoxu

    2013-01-01

    The optimizations of the emitter region and the metal grid of a concentrator silicon solar cell are illustrated.The optimizations are done under 1 sun,100 suns and 200 suns using the 2D numerical simulation tool TCAD software.The optimum finger spacing and its range decrease with the increase in sheet resistance and concentration ratio.The processes of the diffusion and oxidization in the manufacture flow of the silicon solar cells were simulated to get a series of typical emitter dopant profiles to optimize.The efficiency of the solar cell under 100 suns and 200 suns increased with the decrease in diffusion temperature and the increase in oxidation temperature and time when the diffusion temperature is lower than or equal to 865 ℃.The effect of sheet resistance of the emitter on series resistance and the conversion efficiency of the solar cell under concentration was discussed.

  5. Thin film silicon solar cells for space applications: Study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers

    OpenAIRE

    Kuendig, J.; Goetz, M.; Shah, Arvind; Gerlach, L.; Fernandez, E

    2008-01-01

    The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). The effect of subsequent thermal annealing on solar cells degraded by proton irradiation is investigated. A low-temperature annealing behaviour can be observed (at temperatures around 100 to 160°C) for microcrystalline silicon solar cells. To further explore this effect, a second proton irradiation campaign has been carried out, but this time on microcr...

  6. One step lithography-less silicon nanomanufacturing for low cost high-efficiency solar cell production

    Science.gov (United States)

    Chen, Yi; Liu, Logan

    2014-03-01

    To improve light absorption, previously various antireflection material layers were created on solar wafer surface including multilayer dielectric film, nanoparticle sludges, microtextures, noble metal plasmonic nanoparticles and 3D silicon nanostructure arrays. All of these approaches involve nanoscale prepatterning, surface-area-sensitive assembly processes or extreme fabrication conditions; therefore, they are often limited by the associated high cost and low yield as well as the consequent industry incompatibility. In comparison, our nanomanufacturing, an unique synchronized and simultaneous top-down and bottom-up nanofabrication approach called simultaneous plasma enhanced reactive ion synthesis and etching (SPERISE), offers a better antireflection solution along with the potential to increase p-n junction surface area. High density and high aspect ratio anechoic nanocone arrays are repeatedly and reliably created on the entire surface of single and poly crystalline silicon wafers as well as amorphous silicon thin films within 5 minutes under room temperature. The nanocone surface had lower than 5% reflection over the entire solar spectrum and a desirable omnidirectional absorption property. Using the nanotextured solar wafer, a 156mm × 156mm 18.1%-efficient black silicon solar cell was fabricated, which was an 18.3% enhancement over the cell fabricated by standard industrial processes. This process also reduces silicon loss during the texturing step and enables tighter process control by creating more uniform surface structures. Considering all the above advantages, the demonstrated nanomanufacturing process can be readily translated into current industrial silicon solar cell fabrication lines to replace the costly and ineffective wet chemical texturing and antireflective coatings.

  7. The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells

    Science.gov (United States)

    Pryor, R. A.

    1980-01-01

    Three inch diameter Czochralski silicon substrates sliced directly to 5 mil, 8 mil, and 27 mil thicknesses with wire saw techniques were procured. Processing sequences incorporating either diffusion or ion implantation technologies were employed to produce n+p or n+pp+ solar cell structures. These cells were evaluated for performance, ease of fabrication, and cost effectiveness. It was determined that the use of 7 mil or even 4 mil wafers would provide near term cost reductions for solar cell manufacturers.

  8. Prediction model for the diffusion length in silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheknane, A [Laboratoire d' Etude et Developpement des Materiaux Semiconducteurs et Dielectrques, Universite Amar Telidji de Laghouat, BP 37G, Laghouat 03000 (Algeria); Benouaz, T, E-mail: cheknanali@yahoo.co [Laboratoire de Modelisation, Universite Abou BakarBelkaid de Tlemcen Algerie (Algeria)

    2009-07-15

    A novel approach to compute diffusion lengths in solar cells is presented. Thus, a simulation is done; it aims to give computational support to the general development of a neural networks (NNs), which is a very powerful predictive modelling technique used to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.

  9. Failure analysis of thin-film amorphous-silicon solar-cell modules

    Science.gov (United States)

    Kim, Q.

    1984-01-01

    A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

  10. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire

    OpenAIRE

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. W...

  11. Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells

    OpenAIRE

    Söderström, T; Haug, F.-J.; Niquille, X.; Terrazzoni, V; Ballif, C.

    2009-01-01

    The micromorph solar cell (stack of amorphous and microcrystalline cells) concept is the key for achieving high efficiency stabilized thin film silicon solar cells. We introduce a device structure that allows a better control of the light in-coupling into the two subcell components. It is based on an asymmetric intermediate reflector, which increases the effective thickness of the a-Si:H by a factor of more than three. Hence, the a- Si:H thickness reduction dimi...

  12. Thermal effects investigation on electrical properties of silicon solar cells treated by laser irradiation

    OpenAIRE

    Ali Pourakbar Saffar; Bahman Deldadeh Barani

    2014-01-01

    In this paper, we were investigated electrical properties of monocrystalline and polycrystalline silicon solar cells due to laser irradiation with 650 nm wavelength in two states, proximate irradiation and via optics setup. Thermal effect on the cell surface due to laser irradiation was investigated on electrical properties too. Electrical parameters investigation of solar cells illustrates cell excitement via laser irradiation and efficiency decreases due to cell surface temperature increase...

  13. The boron-tailing myth in hydrogenated amorphous silicon solar cells

    OpenAIRE

    Stuckelberger, M.; Park, B.-S.; Bugnon, G.; Despeisse, M; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C.

    2015-01-01

    The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device performance of state-of-the art solar cells: For enhanced current density (reduced bandgap), the deposition temperature should be as high as possible, but boron tailing gets detrimental above 200°C. To investigate this limitation and to show...

  14. Conducting two-phase silicon oxide layers for thin-film silicon solar cells

    OpenAIRE

    Buehlmann, Peter; Bailat, Julien; Feltrin, Andrea; Ballif, Christophe

    2009-01-01

    We present optical properties and microstructure analyses of hydrogenated silicon suboxide layers containing silicon nanocrystals (nc-SiOx:H). This material is especially adapted for the use as intermediate reflecting layer (IRL) in micromorph silicon tandem cells due to its low refractive index and relatively high transverse conductivity. The nc-SiOx:H is deposited by very high frequency plasma enhanced chemical vapor deposition from a SiH4/CO2/H2/PH3 gas mixture. We show the influence of H2...

  15. Silicon solar cells reaching the efficiency limits: from simple to complex modelling

    International Nuclear Information System (INIS)

    Numerical modelling is pivotal in the development of high efficiency solar cells. In this contribution we present different approaches to model the solar cell performance: the diode equation, a generalization of the well-known Hovel model, and a complete device modelling. In all three approaches we implement a Lambertian light trapping, which is often considered as a benchmark for the optical design of solar cells. We quantify the range of parameters for which all three approaches give the same results, and highlight the advantages and limitations of different models. Using these methods we calculate the efficiency limits of single-junction crystalline silicon solar cells in a wide range of cell thickness. We find that silicon solar cells close to the efficiency limits operate in the high-injection (rather than in the low-injection) regime. In such a regime, surface recombination can have an unexpectedly large effect on cells with the absorber thickness lower than a few tens of microns. Finally, we calculate the limiting efficiency of tandem silicon–perovskite solar cells, and we determine the optimal thickness of the bottom silicon cell for different band gaps of the perovskite material. (paper)

  16. Thin film polycrystalline silicon solar cells. Quarterly report No. 1, October 1-December 31, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Sarma, K.R.; Rice, M.J.; Legge, R.

    1979-01-01

    The MoSi/sub 2/ separation layer growth rate has been studied as a function of time and temperature. The presence of small amounts of O/sub 2/ in the silicon deposition ambient were found to inhibit the growth rate of the MoSi/sub 2/ layer and also to affect the reliability of shear separation. Void formation in silicon at the Si-MoSi/sub 2/ interface, due predominantly to diffusion of silicon through the MoSi/sub 2/ layer was observed. This is believed to be responsible for shear separation occurring in the silicon film. Gas chromatograhic procedures were developed for characterizing the silicon deposition process. Coherent twin bundles in the grain-enhanced silicon films were not found to adversely influence solar cell efficiency. Several 1 cm x 2 cm solar cells were fabricated. Performance characteristics of these cells are discussed; the best device had a conversion efficiency of 10.7% (under simulated AM1 illumination) with V/sub OC/ = 0.545 V, J/sub SC/ = 28.65 mA/cm/sup 2/ and FF = 68.3%.

  17. Series resistance effect on the output parameters of buried emitter silicon solar cells

    OpenAIRE

    Gamal M. Eldallal; Mohamed Y. Feteha; Mousaa, Mostafa E.

    1999-01-01

    A realistic distributed equivalent circuit for the buried emitter silicon solar cell is presented taking into consideration the carriers paths through the planar and vertical junctions. In addition, a new theoretical model for the cell characteristics including the cell's mismatching, series resistance, different junctions (planar and vertical) and junctions geometry is considered in this work. The results are compared with the published data.

  18. Study of interdigitated back contact silicon heterojunctions solar cells by two-dimensional numerical simulations

    International Nuclear Information System (INIS)

    Silicon heterojunctions (SHJ) using thin layers of hydrogenated amorphous silicon (a-Si:H) deposited at low temperature on a crystalline silicon (c-Si) substrate are good candidates for high efficiency solar cells. In spite of achieving more than 22% efficiencies, the standard double HJ solar cells are limited by optical absorption and reflection at the front surface. Because it could help to overcome those limitations, the potential use of interdigitated back contact silicon heterojunctions (IBC-SHJ) structure for solar cells needs to be studied. To achieve realistic IBC-SHJ modelling, we use ATLAS 2-D device simulation software that allows accurate bulk and interface defects modelling. We here focus on IBC-SHJ structure on p-type c-Si simulations varying the values of the following parameters: bulk lifetime, surface recombination velocity at both front and back surfaces, bulk thickness, density of defects at the a-Si:H/c-Si interface. The influence of these parameters has been tested by generating the current-voltage (I-V) and spectral response curves. Results indicate that the key parameters to achieve high efficiency are a high crystalline substrate quality, low surface recombination velocity especially at the front surface, and a low recombining a-Si:H/c-Si interface. The simulations show that efficiencies up to 24% can be achieved with textured IBC-SHJ solar cells.

  19. Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells

    Science.gov (United States)

    Chen, Wanghua; Pareige, Philippe; Roca i Cabarrocas, Pere

    2016-06-01

    Hydrogenated polymorphous silicon (pm-Si:H) is a nanostructured material consisting of silicon nanocrystals embedded in an amorphous silicon matrix. Its use as the intrinsic layer in thin film p-i-n solar cells has led to good cell properties in terms of stability and efficiency. Here, we have been able to assess directly the concentration and distribution of nanocrystals and impurities (dopants) in p-i-n solar cells, by using femtosecond laser-assisted atom probe tomography (APT). An effective sample preparation method for APT characterization is developed. Based on the difference in atomic density between hydrogenated amorphous and crystalline silicon, we are able to distinguish the nanocrystals from the amorphous matrix by using APT. Moreover, thanks to the three-dimensional reconstruction, we demonstrate that Si nanocrystals are homogeneously distributed in the entire intrinsic layer of the solar cell. The influence of the process pressure on the incorporation of nanocrystals and their distribution is also investigated. Thanks to APT we could determine crystalline fractions as low as 4.2% in the pm-Si:H films, which is very difficult to determine by standard techniques, such as X-ray diffraction, Raman spectroscopy, and spectroscopic ellipsometry. Moreover, we also demonstrate a sharp p/i interface in our solar cells.

  20. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    NARCIS (Netherlands)

    Liu, Y.

    2010-01-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary wo

  1. Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

    NARCIS (Netherlands)

    Kind, R.; Van Swaaij, R.A.C.M.M.; Rubinelli, F.A.; Solntsev, S.; Zeman, M.

    2011-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate

  2. Large Area Thin Film Silicon: Synergy between Displays and Solar Cells

    NARCIS (Netherlands)

    Schropp, R.E.I.

    2012-01-01

    Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each othe

  3. Amorphous silicon solar cells on natively textured ZnO grown by PECVD

    NARCIS (Netherlands)

    Löffler, J.; Groenen, R.; Linden, J.L.; Sanden, M.C.M. van de; Schropp, R.E.I.

    2001-01-01

    Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to refer

  4. Substrate and p-layer effects on polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Abolmasov S.N.

    2014-07-01

    Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

  5. The solar silicon abundance based on 3D non-LTE calculations

    CERN Document Server

    Amarsi, A M

    2016-01-01

    We present three-dimensional (3D) non-local thermodynamic equilibrium (non-LTE) radiative transfer calculations for silicon in the solar photosphere, using an extensive model atom that includes recent, realistic neutral hydrogen collisional cross-sections. We find that photon losses in the SiI lines give rise to slightly negative non-LTE abundance corrections of the order -0.01 dex. We infer a 3D non-LTE based solar silicon abundance of 7.51 dex. With silicon commonly chosen to be the anchor between the photospheric and meteoritic abundances, we find that the meteoritic abundance scale remains unchanged compared with the Asplund et al. (2009) and Lodders et al. (2009) results.

  6. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Sungho, E-mail: shwoo@dgist.ac.kr [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Hoon Jeong, Jae [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Soo Han, Yoon [Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongbuk 712-702 (Korea, Republic of); Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  7. Properties of Neutron Doped Multicrystalline Silicon for Solar Cells

    Science.gov (United States)

    Pochrybniak, C.; Pytel, K.; Milczarek, J. J.; Jaroszewicz, J.; Lipiński, M.; Piotrowski, T.; Kansy, J.

    2008-04-01

    The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.

  8. Systematic process development towards high performance transferred thin silicon solar cells based on epitaxially grown absorbers

    Science.gov (United States)

    Murcia Salazar, Clara Paola

    The value of thin crystalline silicon (c-Si) solar cells is the potential for higher performance compared to conventional wafer approaches. Thin silicon solar cells can outperform thick cells with the same material properties because the smaller active volume causes a reduced bulk recombination leading to higher voltages while efficient light trapping structures ensure all photons are absorbed. Efficiencies above 20+% can be achieved with less than 20um of c-Si with current silicon solar cell processing technologies. In a thin solar cell, factors that will lead to high efficiency include high minority carrier lifetime, low surface recombination, and good optical confinement. Independently optimizing surface optical and electrical properties in a thin solar cell can achieve this higher performance. In addition, re-utilizing a c-Si wafer with a process that allows optimization of both surfaces is a path to higher performance at lower cost. The challenge in the fabrication of this high performance concept is to separately analyze critical parameters through fabrication and transfer and establish the design rules for high performance. This work contributes to the design and systematic fabrication approach of a 20 mum thick epitaxial silicon solar cell. State-of-the-art thin absorbers of less than 30um have reported 655mV (on a textured front surface with antireflection coating), and efficiencies near 17%. We report near 640mV (on a planar front surface with antireflection coating) for 20 mum thick absorbers. It is found that previously reported efficiencies are tightly related to solar cell's active thickness. In the case of transferred solar cells, the thinnest epitaxial transferred cell reported is near 24 mum thick with an efficiency of 15.4% (transparent front handle, textured with ARC and metallic back reflector). Recently, a c-Si transferred solar cell of 43 mum has reported 19.1% efficiency (with a front texture and ARC with localized back contact and reflector

  9. MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, W.A.

    1980-12-01

    The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

  10. Amorphous silicon materials and solar cells - Progress and directions

    Science.gov (United States)

    Sabisky, E.; Mahan, H.; McMahon, T.

    In 1978, the U.S. Department of Energy initiated government sponsored research in amorphous materials and thin film solar cells. The program was subsequently transferred to the Solar Energy Research Institute for program management. The program grew into a major program for the development of high efficiency (greater than 10 percent), cost effective (15-40 cents per peak watt) thin film amorphous solar cells. The present international interest, the substantial progress made in the device area (2 percent PIN cell in 1976 to 10 percent PIN cell in 1982), and the marketing of the first consumer products using thin film solar cells are to a large ducts using thin film solar cells are to a large extent a consequence of this goal-oriented program.

  11. Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

    Science.gov (United States)

    Weinberg, I.; Hsu, L. C.

    1977-01-01

    Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

  12. Optical analysis of textured plastic substrates to be used in thin silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Escarre, J.; Villar, F.; Fonrodona, M.; Soler, D.; Asensi, J.M.; Bertomeu, J.; Andreu, J. [Universitat de Barcelona (Spain). Dept. Fisica Aplicada i Optica

    2005-05-01

    Light confinement strategies in thin-film silicon solar cells play a crucial role in the performance of the devices. In this work, the possible use of Ag-coated stamped polymers as reflectors to be used in n-i-p solar cells is studied. Different random roughnesses (nanometer and micrometer size) have been transferred on poly(methylmethacrylate) (PMMA) by hot embossing. Morphological and optical analyses of masters, stamped polymers and reflectors have been carried out evidencing a positive surface transference on the polymer and the viability of a further application in solar cells. (author)

  13. Porous silicon multitexture for photoelectric converter structures of solar energy

    Directory of Open Access Journals (Sweden)

    Yerokhov V. Yu.

    2009-06-01

    Full Text Available The possibility of creation of porous silicon’s multitexture, as material of structure of photoelectric converter (FEC is shown. The morphological elements of porous silicon are considered relative to different pore parameters. The integral coefficient of frontal surface reflection of FEC with using of columnar multitexture in the range from 400 nm up to 1150 nm decreased.

  14. Polycrystalline Silicon Sheets for Solar Cells by the Improved Spinning Method

    Science.gov (United States)

    Maeda, Y.; Yokoyama, T.; Hide, I.

    1984-01-01

    Cost reduction of silicon materials in the photovoltaic program of materials was examined. The current process of producing silicon sheets is based entirely on the conventional Czochralski ingot growth and wafering used in the semiconductor industry. The current technology cannot meet the cost reduction demands for producing low cost silicon sheets. Alternative sheet production processes such as unconventional crystallization are needed. The production of polycrystalline silicon sheets by unconventional ingot technology is the casting technique. Though large grain sheets were obtained by this technique, silicon ribbon growth overcomes deficiencies of the casting process by obtaining the sheet directly from the melt. The need to solve difficulties of growth stability and impurity effects are examined. The direct formation process of polycrystalline silicon sheets with large grain size, smooth surface, and sharp edges from the melt with a high growth rate which will yield low cost silicon sheets for solar cells and the photovoltaic characteristics associated with this type of sheet to include an EBIC study of the grain boundaries are described.

  15. Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells

    Institute of Scientific and Technical Information of China (English)

    SUN Haizhi; LIU Caichi; HAO Qiuyan; WANG Lijian

    2006-01-01

    The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optical microscope, spectrumresponse and solar cell efficiency test. The minority carrier lifetime and performance of solar cell reduced depend on oxygen precipitates. A few of oxygen precipitates have formed after single-step annealing; and they do not impact the efficiency dramatically. Pre-annealing at 650 ℃ for 4 h enhances the oxygen precipitation when it is subjected to middle temperature annealing. The solar cells performance decayed sharply. Especially annealing at 950 ℃ for 3 h, the V os and I sc of cells decrease 12% and 25% respectively. Few oxygen precipitates have formed in silicon after high temperature annealing at about 1050 ℃ whether pre-annealing is used or not, and the performance of cells is notbe affected.

  16. In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

    OpenAIRE

    Buehlmann, Peter; Bailat, J.; Dominé, Didier; Billet, Adrian; Meillaud, F.; Feltrin, Andrea; Ballif, Christophe

    2008-01-01

    We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40 V, fill factor=71.9%, and Jsc=12.1 mA/cm2) is achiev...

  17. Material effects in manufacturing of silicon based solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Schieferdecker, Anja; Sachse, Jens-Uwe; Mueller, Torsten; Seidel, Ulf; Bartholomaeus, Lars; Germershausen, Sven; Perras, Reinhold; Meissner, Rita; Hoebbel, Helmut; Schenke, Andreas; Bhatti, A.K.; Kuesters, Karl Heinz [Conergy Solar Module GmbH and Co. KG, Conergy Str. 8, 15236 Frankfurt/Oder (Germany); Richter, Hans [IHP, Im Technologiepark 25, 15236 Frankfurt/Oder (Germany); GFWW, Im Technologiepark 1, 15236 Frankfurt/Oder (Germany)

    2011-03-15

    The performance and efficiency of solar cells depends strongly on influence of materials. Key topics for solar cell optimisation are presently silicon material properties and materials for cell metallisation. Optimisation of silicon is focussed e.g. on material properties such as impurity content, density of dislocation and grain boundaries in multi-crystalline silicon which influence parameters like carrier lifetime, and therefore the cell efficiency. Improved characterisation methods of solar cells like electroluminescence and photoluminescence are combined with techniques such as thermography and LBIC to improve production process and materials. As a result cell efficiency will be increased. Optimisation of cell metallisation and module interconnects is strongly related to progress in paste materials for front side metallisation. Improved materials enable the use of higher emitter resistance and the printing of smaller metal lines, while reducing the series resistance of the solar cell. Progress in paste materials leads to increased solar cell efficiency for the standard cell process. The introduction of new metal pastes has to be combined with careful optimisation of the process window in soldering during module built-up. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    Science.gov (United States)

    John, J.; Prajapati, V.; Vermang, B.; Lorenz, A.; Allebe, C.; Rothschild, A.; Tous, L.; Uruena, A.; Baert, K.; Poortmans, J.

    2012-08-01

    Bulk crystalline Silicon solar cells are covering more than 85% of the world's roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90's and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  19. One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution

    Institute of Scientific and Technical Information of China (English)

    Ye-hua Tang; Chun-lan Zhou; Su Zhou; Yan Zhao; Wen-jing Wang; Jian-ming Fei; Hong-bin Cao

    2013-01-01

    Currently,a conventional two-step method has been used to generate black silicon (BS)surfaces on silicon substrates for solar cell manufacturing.However,the performances of the solar cell made with such surface generation method are poor,because of the high surface recombination caused by deep etching in the conventional surface generation method for BS.In this work,a modified wet chemical etching solution with additives was developed.A zhomogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature.The BS layer had low reflectivity and shallow etching depth.The additive in the etch solution performs the function of pH-modulation.After 16-min etching,the etching depth in the samples was approximately 200 nm,and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%,BS solar cells were fabricated in the production line.The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination.An efficiency of 15,63% for the modified etching BS solar cells was achieved on a large area,ptype single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88%fill factor.

  20. Co-diffused back-contact back-junction silicon solar cells

    International Nuclear Information System (INIS)

    The driving force in photovoltaics is the reduction of the ratio between device costs and conversion efficiency. The present research study introduces a highly innovative diffusion process, called co-diffusion, which allows for a drastic decrease in process costs, on the one hand, and the assembly of a highly efficient solar cell device, the back-contact back-junction (BC-BJ) silicon solar cell, on the other. The co-diffusion approach is based on pre-patterned layers, which contain dopants, deposited by means of plasma enhanced chemical vapor deposition and diffusion in a tube furnace, which contains dopant gases in the process atmosphere. The solar cells are built on n-type silicon which features a high potential in achieving a high silicon life time, which is a necessary requirement of highly efficient BC-BJ solar cells. Fundamental knowledge in terms of co-diffusion processes can be gained from this research study. The processes allow for the fabrication of BC-BJ solar cell devices with a conversion efficiency exceeding 21 %.

  1. Photostability Assessment in Amorphous-Silicon Solar Cells; Determinacion de la Fotoestabilidad en Celulas Solares de Silicio Amorfo

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M. [Ciemat, Madrid (Spain)

    2000-07-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled-photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characteristics in well established conditions. This method is suitable for a kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs.

  2. Enhancement of silicon solar cell performances due to light trapping by colloidal metal nanoparticles

    Science.gov (United States)

    Jana, Sourav Kanti; Le Donne, Alessia; Binetti, Simona

    2012-02-01

    Photovoltaics is the most promising technology for the future of green energy production. To fully realize the potential use of photovoltaic technology, low manufacturing cost and high working photoconversion efficiency must be obtained. Light trapping by metal nanoparticles is an attractive strategy in thin film as well as in bulk silicon solar cells aimed to confine light within the active layer to promote the photon absorption and therefore achieving higher efficiency. In this paper, we tested the deposition of silver and gold nanoparticles on bulk silicon solar cells by colloidal technique in order to enhance their photovoltaic conversion efficiency by means of Plasmonic Light Scattering by metal nanoparticles. The feasible Plasmonic Light Scattering related enhancement was examined using spectral response and I-V measurements. Relative increases of the total delivered power under simulated solar irradiation were observed for cells both with and without antireflection coating using silver and gold nanoparticles.

  3. Microsystems enabled photovoltaics: 14.9% efficient 14 {mu}m thick crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Campa, Jose L. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States); Okandan, Murat; Resnick, Paul J.; Clews, Peggy; Pluym, Tammy; Grubbs, Robert K.; Gupta, Vipin P.; Nielson, Gregory N. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); Zubia, David [University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States)

    2011-02-15

    Crystalline silicon solar cells 10-15 times thinner than traditional commercial c-Si cells with 14.9% efficiency are presented with modeling, fabrication, and testing details. These cells are 14 {mu}m thick, 250 {mu}m wide, and have achieved 14.9% solar conversion efficiency under AM 1.5 spectrum. First, modeling results illustrate the importance of high-quality passivation to achieve high efficiency in thin silicon, back contacted solar cells. Then, the methodology used to fabricate these ultra thin devices by means of established microsystems processing technologies is presented. Finally, the optimization procedure to achieve high efficiency as well as the results of the experiments carried out with alumina and nitride layers as passivation coatings are discussed. (author)

  4. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647), Ecole Polytechnique, 91128 Palaiseau Cedex (France)

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  5. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Science.gov (United States)

    Cabarrocas, Pere Roca i.; Chaâbane, N.; Kharchenko, A. V.; Tchakarov, S.

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  6. Platinum nanoparticle interlayer promoted improvement in photovoltaic performance of silicon/PEDOT:PSS hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Xiao-Qing; Liu, L.F., E-mail: lifeng.liu@inl.int

    2015-01-15

    Inorganic–organic hybrid solar cells have attracted considerable interest in recent years for their low production cost, good mechanical flexibility and ease of processing of polymer films over a large area. Particularly, silicon/conducting polymer hybrid solar cells are extensively investigated and widely believed to be a low-cost alternative to the crystalline silicon solar cells. However, the power conversion efficiency of silicon/conducting polymer solar cells remains low in case hydrogen-terminated silicon is used. In this paper, we report that by introducing a platinum nanoparticle interlayer between the hydrogen-terminated silicon and the conducting polymer poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonate), namely PEDOT:PSS, the power conversion efficiency of the resulting Si/PEDOT:PSS hybrid solar cells can be improved by a factor of 2–3. The possible mechanism responsible for the improvement has been investigated using different techniques including impedance spectroscopy, Mott–Schottky analysis and intensity modulated photocurrent/photovoltage spectroscopy (IMPS/IMVS). The results show that with a platinum nanoparticle interlayer, both the series resistance and charge transport/transfer resistance of the Si/PEDOT:PSS hybrid solar cells are reduced leading to an increased short circuit current density, and the built-in voltage at the space charge region is raised facilitating electron-hole separation. Moreover, the lifetime of charge carriers in the Si/PEDOT:PSS solar cells is extended, namely, the recombination is effectively suppressed which also contributes to the improvement of photovoltaic performance. - Graphical abstract: A platinum nanoparticle interlayer electrolessly deposited between the n-Si:H and PEDOT:PSS can markedly improve the photovoltaic performance of the resulting Si/PEDOT:PSS hybrid solar cells. - Highlights: • A Pt nanoparticle layer is introduced between the Si and PEDOT:PSS in hybrid cells. • The Pt interlayer

  7. In-Line Crack and Stress Detection in Silicon Solar Cells Using Resonance Ultrasonic Vibrations

    Energy Technology Data Exchange (ETDEWEB)

    Ostapenko, Sergei

    2013-04-03

    Statement of Problem and Objectives. Wafer breakage in automated solar cell production lines is identified as a major technical problem and a barrier for further cost reduction of silicon solar module manufacturing. To the best of our knowledge, there are no commercial systems addressing critical needs for in-line inspection of the mechanical quality of solar wafers and cells. The principal objective of the SBIR program is to validate through experiments and computer modeling the applicability of the Resonance Ultrasonic Vibrations system, which ultimately can be used as a real-time in-line manufacturing quality control tool for fast detection of mechanically unstable silicon solar cells caused by cracks. The specific objective of Phase II is to move the technology of in-line crack detection from the laboratory level to commercial demonstration through development of a system prototype. The fragility of silicon wafers possessing low mechanical strength is attributed to peripheral and bulk millimeter-length cracks. The research program is based on feasibility results obtained during Phase I, which established that: (i) the Resonance Ultrasonic Vibrations method is applicable to as-cut, processed wafers and finished cells; (ii) the method sensitivity depends on the specific processing step; it is highest in as-cut wafers and lowest in wafers with metallization pattern and grid contacts; (iii) the system is capable of matching the 2.0 seconds per wafer throughput rate of state-of-art solar cell production lines; (iv) finite element modeling provides vibration mode analysis along with peak shift versus crack length and crack location dependence; (v) a high 91% crack rejection rate was confirmed through experimentation and statistical analysis. The Phase II project has the following specific tasks: (i) specify optimal configurations of the in-line system’s component hardware and software; (ii) develop and justify a system prototype that meets

  8. Project to ferro solar: solar silicon manufacture quality by the metallurgical way; Proyecto ferrosolar: fabricacion de silicio calidad solar por la via metalurgica

    Energy Technology Data Exchange (ETDEWEB)

    Buyon, C. J.; Miranda, V. A.; Souto, S. a.; Miguez, N. J. M.; Perez, V. A.

    2008-07-01

    The spectacular development in the last years of the photovoltaic industry has generated big tension on the market of his principal raw material: the silicon. In Galicia is located the unique factory of metallurgical silicon of the Iberian Peninsular and quartz mines of great quality that are a property of the Group Ferro atlantica I+D is the company that concentrates the activities of R and D inside the above mentioned Group and is developing, from 9 years ago, the project Ferro Solar that consists of the purification for the metallurgical route of the silicon. The success in this project would give to the photovoltaic industry a much more abundant, new and cheap source of silicon that the current route across the polysilicon. The project is developing in the Factory of Sabon - Arteixo- Corunna and already there are obtained very encouraging results, which are an object of this first public presentation. (Author)

  9. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    Energy Technology Data Exchange (ETDEWEB)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  10. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    International Nuclear Information System (INIS)

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  11. Enabling unassisted solar water splitting by iron oxide and silicon

    OpenAIRE

    Jang, Ji-Wook; Du, Chun; Ye, Yifan; Lin, Yongjing; Yao, Xiahui; Thorne, James; Liu, Erik; McMahon, Gregory; Zhu, Junfa; Javey, Ali; Guo, Jinghua; Wang, Dunwei

    2015-01-01

    Photoelectrochemical (PEC) water splitting promises a solution to the problem of large-scale solar energy storage. However, its development has been impeded by the poor performance of photoanodes, particularly in their capability for photovoltage generation. Many examples employing photovoltaic modules to correct the deficiency for unassisted solar water splitting have been reported to-date. Here we show that, by using the prototypical photoanode material of haematite as a study tool, structu...

  12. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  13. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Science.gov (United States)

    Derbouz, K.; Michel, T.; De Moro, F.; Spiegel, Y.; Torregrosa, F.; Belouet, C.; Slaoui, A.

    2013-09-01

    In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template) using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD) or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  14. Role of hydrogen plasma pretreatment in improving passivation of the silicon surface for solar cells applications.

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yanjian; Wei, Changchun; Sun, Jian; Zhao, Ying

    2014-09-10

    We have investigated the role of hydrogen plasma pretreatment in promoting silicon surface passivation, in particular examining its effects on modifying the microstructure of the subsequently deposited thin hydrogenated amorphous silicon (a-Si:H) passivation film. We demonstrate that pretreating the silicon surface with hydrogen plasma for 40 s improves the homogeneity and compactness of the a-Si:H film by enhancing precursor diffusion and thus increasing the minority carrier lifetime (τ(eff)). However, excessive pretreatment also increases the density of dangling bond defects on the surface due to etching effects of the hydrogen plasma. By varying the duration of hydrogen plasma pretreatment in fabricating silicon heterojunction solar cells based on textured substrates, we also demonstrate that, although the performance of the solar cells shows a similar tendency to that of the τ(eff) on polished wafers, the optimal duration is prolonged owing to the differences in the surface morphology of the substrates. These results suggest that the hydrogen plasma condition must be carefully regulated to achieve the optimal level of surface atomic hydrogen coverage and avoid the generation of defects on the silicon wafer. PMID:25141300

  15. Control of back surface reflectance from aluminum alloyed contacts on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cudzinovic, M.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    A process for forming highly reflective aluminum back contacts with low contact resistance to silicon solar cells is described. By controlling the process conditions, it is possible to vary the silicon/aluminum interface from a specular to a diffuse reflector while maintaining a high interface reflectance. The specular interface is found to be a uniform silicon/aluminum alloy layer a few angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly distributed (111) pyramids produced by crystallographic out-diffusion of the bulk silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10{sup {minus}5} {Omega}-cm{sup 2}. The process for forming the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580{degrees}C), making it favorable for commercial solar cell fabrication.

  16. Metallisation Technology of Silicon Solar Cells Using the Convectional and Laser Technique

    Directory of Open Access Journals (Sweden)

    Leszek A. Dobrzanski

    2013-07-01

    Full Text Available The aim of the paper was to optimize the Selective Laser Sintering (SLS and co-firing in the infrared conveyor furnace parameters in front Screen Printed (SP contacts. The co-firing in the infrared conveyor furnace was carried out at various temperature. The SLS was carried out at various a laser beam, scanning speed of the laser beam and front electrode thickness. The investigations were carried out on monocrystalline silicon wafers. During investigations was applied a silver powder with the grain size of 40 μm. The contacts parameters are obtained according to the Transmission Line Model (TLM measurements. Firstly, this paper shows the comparison between the convectional an unconventional method of manufacturing front contacts of monocrystalline silicon solar cells with the different morphology of silicon for comparative purposes. Secondly, the papers shows technological recommendations for both methods in relation to parameters such as: the optimal paste composition, the morphology of the silicon substrate to produce the front electrode of silicon solar cells, which were selected experimentally in order to produce a uniformly melted structure, well adhering to the substrate, with the low resistance of the front electrode-to-substrate joint zone.

  17. Improved ZnS windows for silicon solar cells with arsenic interlayers

    International Nuclear Information System (INIS)

    We have developed a new method of growing ZnS epitaxial layers on silicon subtrates as window materials for silicon solar cells. Our objectives were to lower the density of states at the window/Si interface and to achieve high crystallinity of the window materials. In this new approach, a monolayer of arsenic was deposited on a silicon surface, as a passivation layer, before the growth of ZnS. High resolution transmission electron microscopy (HRTEM) demonstrated a dramatic improvement in crystallinity of the ZnS epitaxial layers grown on the arsenic covered surfaces as compared to those grown on bare silicon surfaces while reflection high energy electron diffraction (RHEED) indicated a much improved growth mode. Secondary ion mass spectroscopy (SIMS) profile analysis showed the arsenic layer remained at the ZnS/Si interface region. Finally, capacitance-voltage (CV) measurements indicated a significant reduction of the density of interface states. The effect of this new window material on the efficiency of single crystal silicon solar cells is being studied. copyright 1995 American Institute of Physics

  18. Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Payson, J. S.; Abdulaziz, S.; Li, Y.; Woodyard, J. R.

    1991-01-01

    It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

  19. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    Science.gov (United States)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  20. Opto-electrical magnetic-field studies on solar silicon; Optoelektrische Magnetfelduntersuchungen an Solarsilizium

    Energy Technology Data Exchange (ETDEWEB)

    Buchwald, Rajko

    2010-05-21

    In the framework of this thesis opto-electrical studies on polycrystalline (pc) solar cells and solar materials have been performed. For this by magnetic-field topographical measurements the current distributions of the silicon samples were determined. For this the new, highly position-resolving magnetic-field measuring method CAIC has been developed and applied. The arrangement, the measurement principle, and the particularities of the method are explained. The results of the CAIC measurements have been compared with results of optical and electrical characterization methods, like the IR transmission-light microscopy, the LBIC, and the LIT method and evaluated. Special grain boundaries in the pc silicon samples with and without pn junction show photocurrent fluxes to the grain boundaries. On the base of the performed studies and the assumption of the existence of a grain-boundary decoration the current-flow model of an electrically active grain boundary is shown for a sample with pn junction as well as for a sample without pn junction. Furthermore macroscopical SiC and Si{sub 3}N{sub 4} precipitations in pc silicon were studied. By means of CAIC measurements hereby the position and the orientation of the conducting and near-surface precipitations could be determined. A current-flow model for macroscopic precipitations in silicon samples without pn junction is presented. Furthermore cell microcracks, failures in the contact structure and layout differences of the contact structure are uniquely detected by CAIC measurements on solar cells.

  1. 19.4%-efficient large-area fully screen-printed silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gatz, Sebastian; Hannebauer, Helge; Hesse, Rene; Werner, Florian; Schmidt, Arne; Dullweber, Thorsten; Bothe, Karsten [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Schmidt, Jan; Brendel, Rolf [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Institute of Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover (Germany)

    2011-04-15

    We demonstrate industrially feasible large-area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 x 125 mm{sup 2} p-type 2-3 {omega} cm boron-doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen-printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic-layer-deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S{sub rear} = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J{sub sc} of up to 38.9 mA/cm{sup 2} and V{sub oc} of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full-area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen-printed solar cells. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  3. Micro-spectroscopy on silicon wafers and solar cells

    Directory of Open Access Journals (Sweden)

    Gundel Paul

    2011-01-01

    Full Text Available Abstract Micro-Raman (μRS and micro-photoluminescence spectroscopy (μPLS are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes.

  4. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays

    Science.gov (United States)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-05-01

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and

  5. Efficient solar photocatalytic activity of TiO2 coated nano-porous silicon by atomic layer deposition

    Science.gov (United States)

    Sampath, Sridhar; Maydannik, Philipp; Ivanova, Tatiana; Shestakova, Marina; Homola, Tomáš; Bryukvin, Anton; Sillanpää, Mika; Nagumothu, Rameshbabu; Alagan, Viswanathan

    2016-09-01

    In the present study, TiO2 coated nano-porous silicon (TiO2/PS) was prepared by atomic layer deposition (ALD) whereas porous silicon was prepared by stain etching method for efficient solar photocatalytic activity. TiO2/PS was characterized by FESEM, AFM, XRD, XPS and DRS UV-vis spectrophotometer. Absorbance spectrum revealed that TiO2/PS absorbs complete solar light with wave length range of 300 nm-800 nm and most importantly, it absorbs stronger visible light than UV light. The reason for efficient solar light absorption of TiO2/PS is that nanostructured TiO2 layer absorbs UV light and nano-porous silicon layer absorbs visible light which is transparent to TiO2 layer. The amount of visible light absorption of TiO2/PS directly increases with increase of silicon etching time. The effect of silicon etching time of TiO2/PS on solar photocatalytic activity was investigated towards methylene blue dye degradation. Layer by layer solar absorption mechanism was used to explain the enhanced photocatalytic activity of TiO2/PS solar absorber. According to this, the photo-generated electrons of porous silicon will be effectively injected into TiO2 via hetero junction interface which leads to efficient charge separation even though porous silicon is not participating in any redox reactions in direct.

  6. Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Martin A. Green

    2007-08-01

    Full Text Available We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

  7. Develop silicone encapsulation systems for terrestrial silicon solar arrays. Final report

    Energy Technology Data Exchange (ETDEWEB)

    None

    1979-12-01

    This work resulted in two basic accomplishments. The first was the identification of DOW CORNING Q1-2577 as a suitable encapsulant material for use in cost effective encapsulation systems. The second was the preparation of a silicon-acrylic cover material containing a durable ultraviolet screening agent for the protection of photo-oxidatively sensitive polymers. The most expeditious method of fabrication is one in which the encapsulant material performs the combined function of adhesive, pottant, and outer cover. The costs of the encapsulant can be minimized by using it as a thin conformal coating. One encapsulation system using silicones was identified which provided protection to photovoltaic cells and survived the JPL qualification tests. This encapsulation system uses DOW CORNING Q1-2577, a conformal coating from Dow Corning, as the combined adhesive, pottant and cover material. The lowest cost encapsulation system using Q1-2577 had Super Dorlux as the substrate structural member. The overall material cost of this encapsulation system is 0.74 cents/ft/sup 2/ (1980 dollars) based on current material prices, which could decrease with increased production of Q1-2577. Subsequent to identifying the best silicone encapsulation system, a silicone acrylic cover material containing a durable ultraviolet screening agent was prepared and its effectiveness in protecting photo-oxidatively sensitive polymers was demonstrated.

  8. Earth--abundant water--splitting catalysts coupled to silicon solar cells for solar--to--fuels conversion

    Science.gov (United States)

    Cox, Casandra R.

    Direct solar--to--fuels conversion can be achieved by coupling semiconductors with water--splitting catalysts. A 10% or higher solar to fuels conversion is minimally necessary for the realization of a robust future technology. Many water--splitting devices have been proposed but due to expensive designs and/or materials, none have demonstrated the necessary efficiency at low--cost that is a requisite for large--scale implementation. In this thesis, a modular approach is used to couple water--splitting catalysts with crystalline silicon (c--Si) photovoltaics, with ultimate goal of demonstrating a stand--alone and direct solar-to-fuels water--splitting device comprising all non--precious, technology ready, materials. Since the oxygen evolution reaction is the key efficiency--limiting step for water--splitting, we first focus on directly interfacing oxygen evolution catalysts with c--Si photovoltaics. Due to the instability of silicon under oxidizing conditions, a protective interface between the PV and OER catalyst is required. This coupling of catalyst to Si semiconductor thus requires optimization of two interfaces: the silicon|protective layer interface; and, the protective layer|catalyst interface. A modular approach allows for the independent optimization and analysis of these two interfaces. A stand--alone water--splitting device based on c--Si is created by connecting multiple single junction c-Si solar cells in series. Steady--state equivalent circuit analysis allows for a targeted solar--to--fuels efficiency to be designed within a predictive framework for a series--connected c--Si solar cells and earth--abundant water--splitting catalysts operating at neutral pH. Guided by simulation and modeling, a completely modular, stand--alone water--splitting device possessing a 10% SFE is demonstrated. Importantly, the modular approach enables facile characterization and trouble--shooting for each component of the solar water--splitting device. Finally, as direct

  9. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  10. Silicon on ceramic process. Silicon sheet growth development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Annual report No. 2, September 17, 1976--September 19, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

    1977-09-30

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. In the past year significant progress was made in all areas of the program. The physical and chemical properties of the standard mullite refractory used for the majority of the coating runs (McDanel MV20 and Coors S1SI) have been characterized. A number of experimental compositions have been identified and procured from Coors. Characterization of the standard compositions revealed that the thermal expansion of mullite depends on both relative amounts of glass phase and on the impurity level in the glass. Since the thermal expansion in mullite exceeds that of silicon, the silicon coating should be in a state of compression. This was confirmed by x-ray measurements. After modifying and cleaning the dip-coating facility, silicon on ceramic (SOC) solar cells were fabricated which demonstrate that the SOC process can produce silicon of solar cell quality. SOC cells having 1 cm/sup 2/ active areas demonstrated measured conversion efficiencies as high as 7.2 percent. Typical open-ciruit voltages (V/sub oc/) and short-circuit current densities (J/sub sc/) were 0.51 volt and 20 mA/cm/sup 2/, respectively. Since the active surface of these solar cells is a highly reflective ''as-grown'' surface, one can expect improvement in J/sub sc/ after an anti-reflection (AR) coating is applied. Results of an economic analysis of the SOC process are presented.

  11. Application of PECVD for bulk and surface passivation of high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Krygowski, T.; Doshi, P.; Cai, L.; Doolittle, A.; Rohatgi, A. [Georgia Inst. of Technology, Atlanta, GA (United States)

    1995-08-01

    Plasma enhanced chemical vapor deposition (PECVD) passivation of bulk and surface defects has been shown to be an important technique to improve the performance of multicrystalline silicon (mc-Si) and single crystalline silicon solar cells. In this paper, we report the status of our on-going investigation into the bulk and surface passivation properties of PECVD insulators for photovoltaic applications. The objective of this paper is to demonstrate the ability of PECVD films to passivate the front (emitter) surface, bulk, and back surface by proper tailoring of deposition and post-PECVD annealing conditions.

  12. Polymeric amorphous carbon as p-type window within amorphous silicon solar cells

    OpenAIRE

    Khan, R U A; Silva, S. R. P.; Van Swaaij, R.A.C.M.M.

    2003-01-01

    Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p layer had to be reduced from 9 to 2.5 nm in order to ensure sufficient conduction through the PAC film. Although the resulting external parameters suggest a decrease in the device efficiency from 9...

  13. Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

    OpenAIRE

    Stuckelberger, Michael; Riesen, Yannick Samuel; Despeisse, Matthieu; Schüttauf, Jan-Willem Alexander; Haug, Franz-Josef; Ballif, Christophe

    2014-01-01

    High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (Voc) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the Voc increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclu...

  14. Towards high-efficiency thin-film silicon solar cells with the “micromorph” concept

    OpenAIRE

    Meier, Johannes; Dubail, S.; Platz, R.; Torres, Pedro; Kroll, U.; Anna Selvan, J. A.; Pellaton Vaucher, N.; Hof, Ch.; Fischer, D.; Keppner, Herbert; Flückiger, R.; Shah, Arvind; Shklover, V.; Ufert, K. -D.

    2008-01-01

    Tandem solar cells with a microcrystalline silicon bottom cell (1 eV gap) and an amorphous-silicon top cell (1.7 eV gap) have recently been introduced by the authors; they were designated as “micromorph” tandem cells. As of now, stabilised efficiencies of 11.2% have been achieved for micromorph tandem cells, whereas a 10.7% cell is confirmed by ISE Freiburg. Micromorph cells show a rather low relative temperature coefficient of 0.27%/K. Applying the grain-boundary trapping model so far develo...

  15. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    Science.gov (United States)

    de Jong, M. M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic substrates can be a solution. In this thesis, we investigate the possibilities of depositing thin film solar cells directly onto cheap plastic substrates. Micro-textured glass and sheets, which have a wide range of applications, such as in green house, lighting etc, are applied in these solar cells for light trapping. Thin silicon films can be produced by decomposing silane gas, using a plasma process. In these types of processes, the temperature of the growing surface has a large influence on the quality of the grown films. Because plastic substrates limit the maximum tolerable substrate temperature, new methods have to be developed to produce device-grade silicon layers. At low temperature, polysilanes can form in the plasma, eventually forming dust particles, which can deteriorate device performance. By studying the spatially resolved optical emission from the plasma between the electrodes, we can identify whether we have a dusty plasma. Furthermore, we found an explanation for the temperature dependence of dust formation; Monitoring the formation of polysilanes as a function of temperature using a mass-spectrometer, we observed that the polymerization rate is indeed influenced by the substrate temperature. For solar cell substrate material, our choice was polycarbonate (PC), because of its low cost, its excellent transparency and its relatively high glass transition temperature of 130-140°C. At 130°C we searched for deposition recipes for device quality silicon, using a very high frequency plasma enhanced chemical deposition process. By diluting the feedstock silane with hydrogen gas, the silicon quality can be improved for amorphous silicon (a-Si), until we reach the

  16. Low-cost multicrystalline back-contact silicon solar cells with screen printed metallization

    International Nuclear Information System (INIS)

    Adaptation to market requirements is a permanent challenge in industrial solar-cell production. Both increase of cell efficiency as well as lowering costs is demanded. Back-contacted solar cells offer multiple advantages in terms of reducing module assembling costs and enhanced cell efficiency. The investigated emitter-wrap-through (EWT) design [1] has a collecting emitter on front and rear side. These emitter areas are electrically connected by small holes. Due to the double-sided collecting junction, this cell design is favourable for materials with a low-minority charge carrier diffusion length leading to a higher short circuit current density. Until now most investigations on EWT solar cells were performed on Cz or even FZ silicon. This was justified as long as different processing techniques had to be developed and compared. But as an industrially applicable process sequence has recently been developed [2], the advantages of the EWT concept compared to conventionally processed cells have to be shown on multicrystalline material. In the following, a manufacturing process of EWT solar cells is presented which is especially adapted to the requirements of multicrystalline silicon. Effective surface texturization was reached by mechanical V-texturization and bulk passivation by a hydrogen plasma treatment. The efficiency of the best solar cells within this process reached 14.2% which is the highest efficiency reported so far for mc-Si 10x10 cm2 EWT solar cells [3]. (author)

  17. Ultraviolet Plasmonic Aluminium Nanoparticles for Highly Efficient Light Incoupling on Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Yinan Zhang

    2016-05-01

    Full Text Available Plasmonic metal nanoparticles supporting localized surface plasmon resonances have attracted a great deal of interest in boosting the light absorption in solar cells. Among the various plasmonic materials, the aluminium nanoparticles recently have become a rising star due to their unique ultraviolet plasmonic resonances, low cost, earth-abundance and high compatibility with the complementary metal-oxide semiconductor (CMOS manufacturing process. Here, we report some key factors that determine the light incoupling of aluminium nanoparticles located on the front side of silicon solar cells. We first numerically study the scattering and absorption properties of the aluminium nanoparticles and the influence of the nanoparticle shape, size, surface coverage and the spacing layer on the light incoupling using the finite difference time domain method. Then, we experimentally integrate 100-nm aluminium nanoparticles on the front side of silicon solar cells with varying silicon nitride thicknesses. This study provides the fundamental insights for designing aluminium nanoparticle-based light trapping on solar cells.

  18. Pyramidal texturing of silicon surface via inorganic-organic hybrid alkaline liquor for heterojunction solar cells

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Zhao, Ying

    2015-10-01

    We demonstrate a new class of silicon texturing approach based on inorganic (sodium hydroxide, NaOH) and organic (tetramethylammonium hydroxide, TMAH) alkaline liquor etching processes for photovoltaic applications. The first stage of inorganic alkaline etching textures the silicon surface rapidly with large pyramids and reduces the cost. The subsequent organic alkaline second-etching improves the coverage of small pyramids on the silicon surface and strip off the metallic contaminants produced by the first etching step. In addition, it could smoothen the surface of the pyramids to yield good morphology. In this study, the texturing duration of both etching steps was controlled to optimize the optical and electrical properties as well as the surface morphology and passivation characteristics of the silicon substrates. Compared with traditional inorganic NaOH texturing, this hybrid process yields smoother (111) facets of the pyramids, fewer residual Na+ ions on the silicon surface, and a shorter processing period. It also offers the advantage of lower cost compared with the organic texturing method based on the use of only TMAH. We applied this hybrid texturing process to fabricate silicon heterojunction solar cells, which showed a remarkable improvement compared with the cells based on traditional alkaline texturing processes.

  19. Spectral Transmittance of Di-methyl Silicon Oil as a Heat Transfer Material for Concentrator Solar Cells

    Institute of Scientific and Technical Information of China (English)

    张博阳; 王一平; 黄群武; 冯加和; 崔勇

    2015-01-01

    The accelerated life test was carried out to investigate the change of spectral transmittance of di-methyl silicon oil and the effects on the electrical performance of silicon solar cell. The di-methyl silicon oil samples be-fore and after accelerated life test were analyzed by FT-IR , GC-MS and LC-MS. The ring compounds and linear compounds with larger molecular weight were detected. The spectral transmittance of di-methyl silicon oil de-creased because the chromophore and auxochrome of the products made a sunlight receive decrease on the surface of the solar cell, and resulted in the reduction of cell performance. According to the decrease of spectral transmit-tance of di-methyl silicon oil, two recovery methods were proposed. The results showed that extraction was supe-rior to vacuum distillation in recovering the aged di-methyl silicon oil.

  20. Eutectic bonding of contacts to silicon solar cells

    Science.gov (United States)

    Giuliano, M. N.

    A process of eutectic wetting and bonding of contact preforms is described which can serve as weld points for interconnection of solar cells. The procedure obviates the need for welding too close to the shallow diffused junction of a solar cell and therefore minimizes mechanical or electrical degradation that is likely when welding directly to the cell metallization. In addition, control of welding parameters is simplified because the weld interconnection is now made to a relatively thick metal preform which is firmly attached to the solar cell. Gold clad kovar was used in this preliminary study. Bond strength was excellent and survived temperature cycling to liquid nitrogen temperature. Electrical performance degradation after alloying was erratic and varied from little or no degradation to severe shunting. The reasons for the loss in fill-factor which is frequently encountered with the present process and choice of materials are not clear at this time. Possible explanations and recommendations for future work are discussed.

  1. Development of Silver-Free Silicon Photovoltaic Solar Cells with All-Aluminum Electrodes

    Science.gov (United States)

    Sun, Wen-Cheng

    To date, the most popular and dominant material for commercial solar cells is crystalline silicon (or wafer-Si). It has the highest cell efficiency and cell lifetime out of all commercial solar cells. Although the potential of crystalline-Si solar cells in supplying energy demands is enormous, their future growth will likely be constrained by two major bottlenecks. The first is the high electricity input to produce crystalline-Si solar cells and modules, and the second is the limited supply of silver (Ag) reserves. These bottlenecks prevent crystalline-Si solar cells from reaching terawatt-scale deployment, which means the electricity produced by crystalline-Si solar cells would never fulfill a noticeable portion of our energy demands in the future. In order to solve the issue of Ag limitation for the front metal grid, aluminum (Al) electroplating has been developed as an alternative metallization technique in the fabrication of crystalline-Si solar cells. The plating is carried out in a near-room-temperature ionic liquid by means of galvanostatic electrolysis. It has been found that dense, adherent Al deposits with resistivity in the high 10--6 Ω-cm range can be reproducibly obtained directly on Si substrates and nickel seed layers. An all-Al Si solar cell, with an electroplated Al front electrode and a screen-printed Al back electrode, has been successfully demonstrated based on commercial p-type monocrystalline-Si solar cells, and its efficiency is approaching 15%. Further optimization of the cell fabrication process, in particular a suitable patterning technique for the front silicon nitride layer, is expected to increase the efficiency of the cell to ~18%. This shows the potential of Al electroplating in cell metallization is promising and replacing Ag with Al as the front finger electrode is feasible.

  2. Periodic nano/micro-hole array silicon solar cell

    OpenAIRE

    Lai, Guan-Yu; Kumar, Dinesh P; Pei, Zingway

    2014-01-01

    In this study, we applied a metal catalyst etching method to fabricate a nano/microhole array on a Si substrate for application in solar cells. In addition, the surface of an undesigned area was etched because of the attachment of metal nanoparticles that is dissociated in a solution. The nano/microhole array exhibited low specular reflectance (

  3. Silicon Schottky photovoltaic diodes for solar energy conversion

    Science.gov (United States)

    Anderson, W. A.

    1975-01-01

    Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

  4. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

  5. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution

    OpenAIRE

    Bao, Xiao-Qing; Cerqueira, M.F.; Alpuim, P.; Liu, Lifeng

    2015-01-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. L. F. Liu acknowledges the financial support by the FCT Investigator grant (IF/01595/2014).

  6. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. PMID:26050844

  7. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  8. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  9. Novel duplex vapor-electrochemical method for silicon solar cells

    Science.gov (United States)

    Nanis, L.; Sanjurjo, A.; Westphal, S.

    1979-01-01

    Optimization studies were carried out for the SiF4-Na reaction with solid Na feed. The goals of the study were the consistent production of high purity reaction products and the gathering of relevant information needed to scale-up the reactor. Parameters studied include: (1) effect of surface to volume ratio of Na slices on the extent of reaction; (2) effect of Na surface oxidation on the extent of reaction; (3) effect of external heating on the extent of SiF4-Na reaction; (4) effect of Na slice addition rate on extent of the reaction; and (5) SiF4-Na reaction - high pressure experiments. An investigation was also made of the possible role played by NaF as a fluxing agent during the separation of silicon by melting of the reaction product (Si + NaF) mixture. Since silicon can be produced by the thermite reaction between Na2SiF6 and Na, studies were initiated to gather information on parameters which control the efficiency of the thermite reaction.

  10. Optical absorption enhancement in slanted silicon nanocone hole arrays for solar photovoltaics

    Science.gov (United States)

    Zhang, Shu-Yuan; Liu, Wen; Li, Zhao-Feng; Liu, Min; Liu, Yu-Sheng; Wang, Xiao-Dong; Yang, Fu-Hua

    2016-10-01

    We investigate slanted silicon nanocone hole arrays as light absorbing structures for solar photovoltaics via simulation. With only 1-μm equivalent thickness, a maximum short-circuit current density of 34.9 mA/cm2 is obtained. Moreover, by adding an Ag mirror under the whole structure, a short-circuit current density of 37.9 mA/cm2 is attained. It is understood that the optical absorption enhancement mainly results from three aspects. First, the silicon nanocone holes provide a highly efficient antireflection effect. Second, after breaking the geometric symmetry, the slanted silicon nanocone hole supports more resonant absorption modes than vertical structures. Third, the Fabry-Perot resonance enhances the light absorption after adding an Ag mirror. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274066, 61474115, and 61504138) and the National High Technology Research and Development Program of China (Grant No. 2014AA032602).

  11. Fabrication of carbon-coated silicon nanowires and their application in dye-sensitized solar cells.

    Science.gov (United States)

    Kim, Junhee; Lim, Jeongmin; Kim, Minsoo; Lee, Hae-Seok; Jun, Yongseok; Kim, Donghwan

    2014-11-12

    We report the fabrication of silicon/carbon core/shell nanowire arrays using a two-step process, involving electroless metal deposition and chemical vapor deposition. In general, foreign shell materials that sheath core materials change the inherent characteristics of the core materials. The carbon coating functionalized the silicon nanowire arrays, which subsequently showed electrocatalytic activities for the reduction of iodide/triiodide. This was verified by cyclic voltammetry and electrochemical impedance spectroscopy. We employed the carbon-coated silicon nanowire arrays in dye-sensitized solar cells as counter electrodes. We optimized the carbon shells to maximize the photovoltaic performance of the resulting devices, and subsequently, a peak power conversion efficiency of 9.22% was achieved. PMID:25319204

  12. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  13. Ultra-high efficient solar cell based on decagonal arrays of silicon nanowires

    Science.gov (United States)

    Hussein, Mohamed; Hameed, Mohamed Farhat O.; Areed, Nihal F. F.; Obayya, Salah Sabry A.

    2014-11-01

    Silicon nanowires (SiNWs) are the subject of intense research in solar energy harvesting due to their unique electrical and optical characteristics. The transmission, reflection, and absorption spectra of decagonal Si NWs (D-SiNWs) solar cells have been calculated using a three-dimensional finite-difference time-domain method to present a design guideline for ultra-high efficiency SiNW in solar cell applications. In this study, the structure geometrical parameters of the suggested design are tuned to maximize light absorption. The ultimate efficiency is used to quantify the absorption enhancement of the SiNWs solar cells. A maximum ultimate efficiency of 39.3% is achieved for the reported D-SiNWs, which is greater than that of the previous work of slanting Si NWs by 17.49%.

  14. Technology for the large-scale production of multi-crystalline silicon solar cells and modules

    International Nuclear Information System (INIS)

    In cooperation with Shell Solar Energy (formerly R and S Renewable Energy Systems) and the Research Institute for Materials of the Catholic University Nijmegen the Netherlands Energy Research Foundation (ECN) plans to develop a competitive technology for the large-scale manufacturing of solar cells and solar modules on the basis of multi-crystalline silicon. The project will be carried out within the framework of the Economy, Ecology and Technology (EET) program of the Dutch ministry of Economic Affairs and the Dutch ministry of Education, Culture and Sciences. The aim of the EET-project is to reduce the costs of a solar module by 50% by means of increasing the conversion efficiency as well as the development of cheap processes for large-scale production

  15. Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles

    International Nuclear Information System (INIS)

    In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300–1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps. (paper)

  16. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.

    2015-01-01

    © 2015 The Royal Society of Chemistry. A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. This work paves the way for integrating perovskites into a low-cost and high-efficiency (>25%) tandem cell.

  17. Investigation of the screen printed contacts of silicon solar cells using Transmission Line Model

    Directory of Open Access Journals (Sweden)

    P. Panek

    2010-07-01

    Full Text Available Purpose: The aim of the paper is to analyze how to improve the quality of the screen printed contacts of silicon solar cells. This means forming front side grid in order to decrease contact resistance.Design/methodology/approach: The topography of screen printed contacts were investigated using ZEISS SUPRA 25 scanning electron microscope (SEM with an energy dispersive X-ray (EDS spectrometer for microchemical analysis. Front collection grid was created using two types of Ag pastes.The Transmission Line Model (TLM patterns were fabricated by screen printing method on p – type Czochralski silicon Cz-Si wafer with n+ emitter without texture and with a titanium oxide (TiOx layer as an antireflection coating (ARC. Electrical properties of contacts were investigated using TLM.Findings: This work presents a conventional analysis of a screen printing process for contact formation in the crystalline silicon solar cells. The seed layer was created using silver pasts by the screen printed metallization. These contact structures were investigated using SEM to gain a better understanding of the obtained electrical parameters.Research limitations/implications: The contact resistance of the screen-printed metallization depends not only on the kind of applied paste and firing conditions, but is also strongly influenced by the surface morphology of the silicon substrate.Practical implications: Contact formation is an important production step to be optimized in the development of high efficiency solar cells.Originality/value: The effect of co-firing different pasts (especially a past, which was prepared using silver nano-powder on electrical properties of silicon wafers.

  18. Effect of the front electrode metallisation process on electrical parameters of a silicon solar cell

    Directory of Open Access Journals (Sweden)

    M. Musztyfaga

    2011-10-01

    Full Text Available Purpose: This paper shows that the laser micro-treatment of the silicon elements of solar cells with the different morphology of monocrystalline silicon, including the selective laser sintering of the front electrode to its surface using the CO2 laser, improves the quality by minimising the resistance of a joint between the electrode and the substrate. The influence of the properties achieved for the front electrode on the electrical properties of solar cells was assessed. A front electrode of photovoltaic cells deposited by the traditional screen printing method and by co-firing in the infrared conveyor furnace was prepared for comparative purposes.Design/methodology/approach: The topography of front contacts subjected to selective laser sintering and co-firing in the infrared conveyor furnace was investigated using the scanning electron microscope with the energy dispersive X-ray (EDS spectrometer for a microchemical analysis and with the confocal laser scanning microscope. Both, the surface topography and cross section of the front contacts was examined with the SEM microscope. The phase composition analyses of the selected front contacts were carried out using the XRD method. The front contacts were formed on the surface with the different morphologies of solar cells: textured ones with a coated antireflection layer, textured ones without a coated antireflection layer, non-textured ones with a coated antireflection layer and non-textured ones without a coated antireflection layer. An average size of pyramids was measured using the atomic force microscope (AFM. The resistance of the front electrodes was investigated using the Transmission Line Model (TLM.Findings: The following technological recommendations for the laser micro-treatment technology such as optimal paste composition, the power and scanning speed of the laser beam, the morphology of the silicon substrate to produce the front electrode of silicon solar cells, were selected

  19. Enhanced photon management in silicon thin film solar cells with different front and back interface texture.

    Science.gov (United States)

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-01-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm(2) resulting in a total short circuit current of 23.65 mA/cm(2) and an energy conversion efficiency of 8.35%. PMID:27481226

  20. Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

    Science.gov (United States)

    Lai, Donny; Tan, Yew Heng; Gunawan, Oki; He, Lining; Seng Tan, Chuan

    2011-07-01

    We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.

  1. Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Lu Wang

    2015-09-01

    Full Text Available An 18 μm thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell’s theoretical upper limit in an ideal case. This paper explores the open circuit voltage losses of the thin silicon solar cell, starting from the ideal case, through first principle calculation and experiments. The open circuit voltage losses come from the introduced recombination due to the non-ideal surface passivation and contacts integration on front and rear surfaces, and edge isolation. This paper presents a roadmap of the open circuit voltage reduction from an ideal case of 767.0 mV to the best measured value of 642.3 mV.

  2. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency

    Science.gov (United States)

    Funde, Adinath M.; Nasibulin, Albert G.; Gufran Syed, Hashmi; Anisimov, Anton S.; Tsapenko, Alexey; Lund, Peter; Santos, J. D.; Torres, I.; Gandía, J. J.; Cárabe, J.; Rozenberg, A. D.; Levitsky, Igor A.

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  3. Plan for Subdividing Genesis Mission Diamond-on-Silicon 60000 Solar Wind Collector

    Science.gov (United States)

    Burkett, Patti J.; Allton, J. A.; Clemett, S. J.; Gonzales, C. P.; Lauer, H. V., Jr.; Nakamura-Messenger, K.; Rodriquez, M. C.; See, T. H.; Sutter, B.

    2013-01-01

    NASA's Genesis solar wind sample return mission experienced an off nominal landing resulting in broken, albeit useful collectors. Sample 60000 from the collector is comprised of diamond-like-carbon film on a float zone (FZ) silicon wafer substrate Diamond-on-Silicon (DOS), and is highly prized for its higher concentration of solar wind (SW) atoms. A team of scientist at the Johnson Space Center was charged with determining the best, nondestructive and noncontaminating method to subdivide the specimen that would result in a 1 sq. cm subsample for allocation and analysis. Previous work included imaging of the SW side of 60000, identifying the crystallographic orientation of adjacent fragments, and devising an initial cutting plan.

  4. Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Ching-In Wu

    2013-01-01

    Full Text Available The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same k value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters.

  5. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency.

    Science.gov (United States)

    Funde, Adinath M; Nasibulin, Albert G; Syed, Hashmi Gufran; Anisimov, Anton S; Tsapenko, Alexey; Lund, Peter; Santos, J D; Torres, I; Gandía, J J; Cárabe, J; Rozenberg, A D; Levitsky, Igor A

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics. PMID:27005494

  6. The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available For optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption have to be compromised themselves. For this purpose, the effect of both doping concentration and thickness of emitter layer was investigated. It was found that with gas phase doping concentration and emitter layer thickness of 3% and 7 nm, solar cell efficiency in excess of 14.6% can be achieved. For high gas phase doping concentration, the degradation of open-circuit voltage as well as cell efficiency was obtained due to the higher disorder in the emitter layer. The heavily doped along with thicker in thickness of emitter layer results in light absorption on short wavelength, then diminishing short-circuit current density.

  7. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au [Centre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, Victoria 3122 (Australia); Tao, Zhikuo [College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Ong, Thiam Min Brian [Plasma Sources and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  8. Nanostructured three-dimensional thin film silicon solar cells with very high efficiency potential

    Science.gov (United States)

    Vanecek, Milan; Babchenko, Oleg; Purkrt, Adam; Holovsky, Jakub; Neykova, Neda; Poruba, Ales; Remes, Zdenek; Meier, Johannes; Kroll, Ulrich

    2011-04-01

    We report on the experimental realization of amorphous/microcrystalline silicon tandem solar cells (Micromorph) based on our three-dimensional design. An enhancement is reached in the short-circuit current by 40%, with an excellent open-circuit voltage of 1.41V and a fill factor of 72%. We have used nanoholes or microholes dry etched into the ZnO front contact layer. Monte Carlo optical modeling shows that stable efficiency of amorphous silicon p-i-n solar cells in over 12% range is possible. For the Micromorph cells, efficiency over 15% with the thickness of amorphous Si below 200 nm and of microcrystalline Si around 500 nm is possible.

  9. Improved performance of silicon-nanoparticle film-coated dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Ravindra Kumar; Bedja, Idriss M. [CRC, Department of Optometry, College of Applied Medical Sciences, King Saud University, P.O. Box 10219, Riyadh 11433 (Saudi Arabia); Aldwayyan, Abdullah Saleh [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2012-11-15

    Silicon (Si) nanoparticles with average size of 13 nm and orange-red luminescence under UV absorption were synthesized using electrochemical etching of silicon wafers. A film of Si nanoparticles with thickness of 0.75 {mu}m to 2.6 {mu}m was coated on the glass (TiO{sub 2} side) of a dye-sensitized solar cell (DSSC). The cell exhibited nearly 9% enhancement in power conversion efficiency ({eta}) at film thickness of {proportional_to}2.4 {mu}m under solar irradiation of 100 mW/cm{sup 2} (AM 1.5) with improved fill factor and short-circuit current density. This study revealed for the first time that the Si-nanoparticle film converting UV into visible light and helping in homogeneous irradiation, can be utilized for improving the efficiency of the DSSCs. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Capacitance and conductance studies on silicon solar cells subjected to 8 MeV electron irradiations

    Science.gov (United States)

    Sathyanarayana Bhat, P.; Rao, Asha; Sanjeev, Ganesh; Usha, G.; Priya, G. Krishna; Sankaran, M.; Puthanveettil, Suresh E.

    2015-06-01

    The space grade silicon solar cells were irradiated with 8 MeV electrons with doses ranging from 5-100 k Gy. Capacitance and conductance measurements were carried out in order to investigate the anomalous degradation of the cells in the radiation harsh environments and the results are presented in this paper. Detailed and systematic analysis of the frequency-dependent capacitance and conductance measurements were performed to extract the information about the interface trap states. The small increase in density of interface states was observed from the conductance-frequency measurements. The reduction in carrier concentration upon electron irradiation is due to the trapping of charge carriers by the radiation induced trap centres. The Drive Level Capacitance Profiling (DLCP) technique has been applied to study the properties of defects in silicon solar cells. A small variation in responding state densities with measuring frequency was observed and the defect densities are in the range 1015 -1016 cm-3.

  11. Enhanced photon management in silicon thin film solar cells with different front and back interface texture

    Science.gov (United States)

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A.; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-08-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm2 resulting in a total short circuit current of 23.65 mA/cm2 and an energy conversion efficiency of 8.35%.

  12. Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles.

    Science.gov (United States)

    Liu, Kong; Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Wang, Zhanguo

    2013-02-18

    Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture our hybrid cells. Both short-circuit current and external quantum efficiency measurements show an enhancement in optical absorption of organic layer, especially at lower wavelengths.

  13. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel D. Tune

    2013-12-01

    Full Text Available The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  14. Bio-inspired co-catalysts bonded to a silicon photocathode for solar hydrogen evolution

    DEFF Research Database (Denmark)

    Hou, Yidong; Abrams, Billie; Vesborg, Peter Christian Kjærgaard;

    2011-01-01

    part of the spectrum is utilized for hydrogen evolution while the blue part is reserved for the more difficult oxygen evolution. The samples have been illuminated with a simulated red part of the solar spectrum i.e. long wavelength (" > 620 nm) part of simulated AM 1.5G radiation. The current densities...... at the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10%. The experimental observations are supported by DFT calculations of the Mo3S4 cluster adsorbed on the hydrogen-terminated silicon surface...

  15. Crystal evaluation of spherical silicon produced by dropping method and their solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Omae, Satoshi; Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro [Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan); Murozono, Mikio [Clean Venture 21 Co., 2-8-1 Tsuda-yamate, Hirakata, Osaka 573-0128 (Japan)

    2006-12-15

    The characterization of silicon spheres 1mm in diameter, which were produced by a dropping method and solar cell performance using spheres are reported. Scanning electron microscopy observations of the Si spheres after Dash etching and X-ray pole figures indicate that the spherical Si has many defects and crystal grains. Systematic study of the crystal growth temperature and the atmosphere in the dropping area yields improvements in the crystallinity as well as a decrease in the concentrations of oxygen and carbon. Moreover, the spherical Si solar cell performance improved because these impurities are the prime factor for recombination centers. (author)

  16. Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cells

    OpenAIRE

    Massiot, I.; Colin, Clément; Péré-Laperne, Nicolas; Roca I Cabarrocas, Pere; Sauvan, Christophe; Lalanne, Philippe; Pelouard, Jean-Luc; Collin, Stéphane

    2012-01-01

    International audience Broadband light trapping is numerically demonstrated in ultra-thin solar cells composed of a flat amorphous silicon absorber layer deposited on a silver mirror. A one-dimensional silver array is used to enhance light absorption in the visible spectral range with low polarization and angle dependencies. In addition, the metallic nanowires play the role of transparent electrodes. We predict a short-circuit current density of 14:6mA=cm2 for a solar cell with a 90 nm-thi...

  17. Thermal effects investigation on electrical properties of silicon solar cells treated by laser irradiation

    Directory of Open Access Journals (Sweden)

    Ali Pourakbar Saffar

    2014-12-01

    Full Text Available In this paper, we were investigated electrical properties of monocrystalline and polycrystalline silicon solar cells due to laser irradiation with 650 nm wavelength in two states, proximate irradiation and via optics setup. Thermal effect on the cell surface due to laser irradiation was investigated on electrical properties too. Electrical parameters investigation of solar cells illustrates cell excitement via laser irradiation and efficiency decreases due to cell surface temperature increase. Monocrystalline parameters change with uniform shape due to thermal effect and laser irradiation toward polycrystalline cells.

  18. Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

    Science.gov (United States)

    Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.

    1987-07-01

    A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.

  19. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Directory of Open Access Journals (Sweden)

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  20. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    Directory of Open Access Journals (Sweden)

    L. Shen

    2014-02-01

    Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

  1. Design principle for absorption enhancement with nanoparticles in thin-film silicon solar cells

    International Nuclear Information System (INIS)

    The use of nanoparticles in solar cells has created many controversies. In this paper, different mechanisms of nanoparticles with different materials with diameters varying from 50 to 200 nm, surface coverage at 5, 20, and 60 %, and different locations are analyzed systematically for efficient light trapping in a thin-film c-Si solar cell. Mie theory and the finite difference time domain method are used for analysis to give a design principle with nanoparticles for the solar cell application. Metals exhibit plasmonic resonances and angular scattering, while dielectrics show anti-reflection and scattering in the incident direction. A table is given to summarize the advantages and disadvantages in different conditions. The silicon absorption enhancement with nanoparticles on top is mainly in the shorter wavelengths below 700 nm, and both Al and SiO2 nanoparticles with diameter around 100 nm show the most significant enhancement. The silicon absorption enhancement with embedded nanoparticles takes place in the longer wavelengths over 700 nm, and Ag and SiO2 nanoparticles with larger diameter around 200 nm perform better. However, the light absorbed by Ag nanoparticles will be converted to heat and will lead to decrease in cell efficiency; hence, the choice of metallic nanoparticles in applications to solar cells should be carefully considered. The design principle proposed in this work gives a guideline by choosing reasonable parameters for the different requirements in the application of thin-film solar cells

  2. Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes

    Institute of Scientific and Technical Information of China (English)

    WU Shan-Shan; WANG Lei; YANG De-Ren

    2011-01-01

    @@ The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot, which contain deteriorated regions, is investigated.It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells(about 16%)is achieved.It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions.Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not.Therefore, it is suggested that the border of a me-Si ingot could be used to fabricate high efficiency solar cells, which will increase me-Si utilization effectively.%The behavior of wafers and solar cells from the border of a multicrystalline silicon (mc-Si) ingot, which contain deteriorated regions, is investigated. It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells (about 16%) is achieved. It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions. Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not. Therefore, it is suggested that the border of a mc-Si ingot could be used to fabricate high efficiency solar cells, which will increase mc-Si utilization effectively.

  3. Surface morphology and impurity distribution of electron beam recrystallized silicon films on low cost substrates for solar cell absorber

    Institute of Scientific and Technical Information of China (English)

    FU Li; GROMBALL F; MüLLER J

    2006-01-01

    A line shaped electron beam recrystallised polycrystalline silicon film on the low cost substrate was investigated for the use of the solar cell absorber. The applied EB energy density strongly influences the surface morphology of the film system. Lower EB energy density results in droplet morphology and the rougher SiO2 capping layer due to the low fluidity. With the energy increasing, thecapping layer becomes smooth and continuous and less and small pinholes form in the silicon film. Tungstendisilicide (WSi2) is formed at the interface tungsten/silicon but also at the grain boundaries of the silicon. Because of the fast melting and cooling of the silicon film, the eutectic of silicon and tungstendisilicide mainly forms at the grain boundary of the primary silicon dendrites. The SEM-EDX analysis shows that there are no chlorine and hydrogen in the area surrounding a pinhole after recrystallization because of outgassing during the solidification.

  4. Passivation of the surface of rear contact solar cells by porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Nichiporuk, O. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine) and Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)]. E-mail: oleksiy.nichiporuk@insa-lyon.fr; Kaminski, A. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Lemiti, M. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Fave, A. [Laboratoire de Physique de la Matiere, UMR 5511, INSA de Lyon, Bat. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Litvinenko, S. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine); Skryshevsky, V. [Radiophysics Department, Taras Shevchenko National University, 64 Vladimirskaya, 01033, Kiev (Ukraine)

    2006-07-26

    In this paper we analyse the passivation of the front surface of p-Si interdigitated rear contacts solar cell (IBC) by a thin porous silicon (PS) layer. Effectively, an efficiency improvement of 87% in relative was observed after porous silicon layer formation on the front surface of the IBC cell. The origin of surface passivation by the PS layer was studied by Laser Beam Induced Current (LBIC) method. The front surface of rear contacts cell with thin porous silicon layer was scanned by a modulated red laser beam in presence of a permanent light with different wavelengths and intensities. It was shown that without permanent illumination, the photocurrent of the cell with PS layer is very low, even lower than for a cell with unpassivated surface. However with short permanent wavelength illumination a strong increase of photocurrent was observed (8-10 times{exclamation_point}). The light-dependent porous silicon passivation phenomenon is explained by a significant negative charge accumulation at the PS/p-Si interface traps under illumination. This leads to the formation of a hi-low (p{sup +}/p) junction at the front surface of the cell and to the reduction of the front surface recombination rate, like in Front Surface Field Solar Cell.

  5. Light trapping regimes in thin-film silicon solar cells with a photonic pattern.

    Science.gov (United States)

    Zanotto, Simone; Liscidini, Marco; Andreani, Lucio Claudio

    2010-03-01

    We present a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub-micron scale realized in the silicon layer and filled with silicon dioxide right below a properly designed antireflection (AR) coating. The study and optimization of the structure as a function of all the photonic lattice parameters, together with the calculation of the absorption in a single layer, allows to identify the different roles of the periodic pattern in determining an increase of the absorbance. From one side, the photonic crystal and the AR coating act as impedance matching layers, thus minimizing reflection of incident light over a particularly wide range of frequencies. Moreover a strong absorption enhancement is observed when the incident light is coupled into the quasi guided modes of the photonic slab. We found a substantial increase of the short-circuit current when the parameters are properly optimized, demonstrating the advantage of a wavelength-scale, photonic crystal based approach for patterning of thin-film silicon solar cells. PMID:20389438

  6. Effect of production processes on the fracture strength of silicon solar cells

    Science.gov (United States)

    Chen, C. P.; Royal, E. L.; Klink, H.

    1980-01-01

    Fracture of Czochralski silicon wafers during processing is an important factor in solar cell yield and cost. A fracture-mechanics test and analysis program was developed to evaluate fracture strength changes in the in-process wafer-to-cell processing at different stages on a manufacturer's production line. The strength data were described by Weibull statistical analysis and can be interpreted with the surface-flaw distribution of each of the process steps.

  7. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  8. Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Rentsch, J.

    2005-04-15

    Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

  9. Highly Efficient Hybrid Polymer and Amorphous Silicon Multijunction Solar Cells with Effective Optical Management.

    Science.gov (United States)

    Tan, Hairen; Furlan, Alice; Li, Weiwei; Arapov, Kirill; Santbergen, Rudi; Wienk, Martijn M; Zeman, Miro; Smets, Arno H M; Janssen, René A J

    2016-03-16

    Highly efficient hybrid multijunction solar cells are constructed with a wide-bandgap amorphous silicon for the front subcell and a low-bandgap polymer for the back subcell. Power conversion efficiencies of 11.6% and 13.2% are achieved in tandem and triple-junction configurations, respectively. The high efficiencies are enabled by deploying effective optical management and by using photoactive materials with complementary absorption. PMID:26780260

  10. Nanoimprint Lithography for High-Efficiency Thin-Film Silicon Solar Cells

    OpenAIRE

    Battaglia, Corsin; Escarré, Jordi; SöDerströM, Karin; Erni, Lukas; Ding, Laura; Bugnon, Grégory; Billet, Adrian; Boccard, Mathieu; Barraud, Loris; De Wolf, Stefaan; Haug, Franz-Josef; Despeisse, Matthieu; Ballif, Christophe

    2011-01-01

    We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tandem junction cells. Excellent light incoupling results in a remarkable summed short-circuit current d...

  11. Enabling unassisted solar water splitting by iron oxide and silicon

    Science.gov (United States)

    Jang, Ji-Wook; Du, Chun; Ye, Yifan; Lin, Yongjing; Yao, Xiahui; Thorne, James; Liu, Erik; McMahon, Gregory; Zhu, Junfa; Javey, Ali; Guo, Jinghua; Wang, Dunwei

    2015-06-01

    Photoelectrochemical (PEC) water splitting promises a solution to the problem of large-scale solar energy storage. However, its development has been impeded by the poor performance of photoanodes, particularly in their capability for photovoltage generation. Many examples employing photovoltaic modules to correct the deficiency for unassisted solar water splitting have been reported to-date. Here we show that, by using the prototypical photoanode material of haematite as a study tool, structural disorders on or near the surfaces are important causes of the low photovoltages. We develop a facile re-growth strategy to reduce surface disorders and as a consequence, a turn-on voltage of 0.45 V (versus reversible hydrogen electrode) is achieved. This result permits us to construct a photoelectrochemical device with a haematite photoanode and Si photocathode to split water at an overall efficiency of 0.91%, with NiFeOx and TiO2/Pt overlayers, respectively.

  12. Silicon pin solar cells investigated by multi-frequency EDMR

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Christoph; Teutloff, Christian; Behrends, Jan; Bittl, Robert [Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Fehr, Matthias; Schnegg, Alexander; Lips, Klaus [Institut fuer Silizium-Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialien und Energie, Kekulestr. 5, 12489 Berlin (Germany)

    2011-07-01

    Electrically detected magnetic resonance (EDMR) can be used to investigate paramagnetic centres influencing charge transport in semiconductors even at concentrations well below the sensitivity threshold of conventional electron paramagnetic resonance (EPR). This technique measures conductivity changes in the sample that occur when spin transitions cause an enhancement or a quenching of currents. EDMR was e.g. successfully employed to microcrystalline Si pin solar cells in X-band (9.7 GHz). We present the application of EDMR to Si pin solar cells at Q-band frequency (34 GHz). We could demonstrate a gain of spectral resolution. With multi-frequency EDMR we distinguished between field-dependent and field-independent interactions. Further, we realized EDMR in a non-resonant setup at 94 GHz (W-band) and show first results.

  13. Silicon-on-ceramic process: silicon sheet growth and device development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Solar Array Project. Quarterly report No. 11, January 1-March 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P.W.; Zook, J.D.; Heaps, J.D.; Grung, B.L.; Koepke, B.; Schuldt, S.B.

    1979-04-30

    The purpose of the research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 12 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A dip-coating method for putting silicon on ceramic (SOC) has been shown to produce solar-cell-quality sheet silicon. This method and a continuous coating process also being investigated have excellent scale-up potential which offers an outstanding, cost-effective way to manufacture large-area solar cells. Results and accomplishments are described.

  14. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  15. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Science.gov (United States)

    Höger, Ingmar; Himmerlich, Marcel; Gawlik, Annett; Brückner, Uwe; Krischok, Stefan; Andrä, Gudrun

    2016-01-01

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  16. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    International Nuclear Information System (INIS)

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%

  17. Glass frits coated with silver nanoparticles for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yingfen, E-mail: lyf350857423@163.com; Gan, Weiping; Zhou, Jian; Li, Biyuan

    2015-06-30

    Graphical abstract: - Highlights: • Silver-coated glass frits for solar cells were prepared by electroless plating. • Gum Arabic was used as the activating agent of glass frits. • Silver-coated glass frits can improve the photovoltaic performances of solar cells. - Abstract: Glass frits coated with silver nanoparticles were prepared by electroless plating. Gum Arabic (GA) was used as the activating agent of glass frits without the assistance of stannous chloride or palladium chloride. The silver-coated glass frits prepared with different GA dosages were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and thermogravimetric analysis (TGA). The characterization results indicated that silver-coated glass frits had the structures of both glass and silver. Spherical silver nanoparticles were distributed on the glass frits evenly. The density and particle size of silver nanoparticles on the glass frits can be controlled by adjusting the GA dosage. The silver-coated glass frits were applied to silver pastes to act as both the densification promoter and silver crystallite formation aid in the silver electrodes. The prepared silver-coated glass frits can improve the photovoltaic performances of solar cells.

  18. Improvement in photovoltaic properties of silicon solar cells with a doped porous silicon layer with rare earth (Ce, La) as antireflection coatings

    Energy Technology Data Exchange (ETDEWEB)

    Atyaoui, Malek, E-mail: atyaoui.malek@yahoo.fr [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95, Hammam Lif 2050 (Tunisia); Dimassi, Wissem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia); Atyaoui, Atef [Laboratoire de traitement des eaux usées, Centre de recherches et des technologies des eaux, technopole de Borj-Cédria, PB: 273, Soliman 8020 (Tunisia); Elyagoubi, Jalel; Ouertani, Rachid; Ezzaouia, Hatem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia)

    2013-09-15

    The performance improvement of solar cells due to the formation of a porous silicon layer treated with rare earth (Ce, La) in the n{sup +} emitter of silicon n{sup +}/p junctions has been investigated. The photovoltaic properties of the cells with and without treatment of the porous silicon layer are compared. From the reflection measurements, it was shown that the cells with treated PS layers have lower reflectivity value compared to cell with untreated PS layer. The main result is that the photovoltaic energy conversion efficiency of solar cells can be enhanced by using the treated porous silicon layers with the rare earth (Ce, La) as anti-reflection coatings. -- Highlights: • The reduction of optical loss in silicon (c-Si) solar cells attracts the attention of many researches to achieve high efficiencies. • To attain this aim, the treated PS layers with rare earth (La, Ce) are suggested to be used as an (ARC) of c-Si solar cell. • The result showed a decrease in the optical losses which can explain the improved photovoltaic properties.

  19. Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Wan, Yimao; Samundsett, Chris; Bullock, James; Allen, Thomas; Hettick, Mark; Yan, Di; Zheng, Peiting; Zhang, Xinyu; Cui, Jie; McKeon, Josephine; Javey, Ali; Cuevas, Andres

    2016-06-15

    In this study, we present a novel application of thin magnesium fluoride films to form electron-selective contacts to n-type crystalline silicon (c-Si). This allows the demonstration of a 20.1%-efficient c-Si solar cell. The electron-selective contact is composed of deposited layers of amorphous silicon (∼6.5 nm), magnesium fluoride (∼1 nm), and aluminum (∼300 nm). X-ray photoelectron spectroscopy reveals a work function of 3.5 eV at the MgF2/Al interface, significantly lower than that of aluminum itself (∼4.2 eV), enabling an Ohmic contact between the aluminum electrode and n-type c-Si. The optimized contact structure exhibits a contact resistivity of ∼76 mΩ·cm(2), sufficiently low for a full-area contact to solar cells, together with a very low contact recombination current density of ∼10 fA/cm(2). We demonstrate that electrodes functionalized with thin magnesium fluoride films significantly improve the performance of silicon solar cells. The novel contacts can potentially be implemented also in organic optoelectronic devices, including photovoltaics, thin film transistors, or light emitting diodes. PMID:27219911

  20. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Colina, M., E-mail: monicacolinb@gmail.com; Morales-Vilches, A.; Voz, C.; Martín, I.; Ortega, P.; Orpella, A.; López, G.; Alcubilla, R.

    2015-05-01

    Highlights: • LIFT technique is investigated to improve heterojunction HJ solar cells. • Doped silicon films are adequate precursors for LIFT application in HJ cells. • LIFT leads to a reduction of the series resistance of a-Si HJ diodes. • LIFT allows the improvement of the front contact resistance in a-Si HJ solar cells. - Abstract: In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J–V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency.

  1. Realization of improved efficiency on nanostructured multicrystalline silicon solar cells for mass production

    International Nuclear Information System (INIS)

    We report the realization of both excellent optical and electrical properties of nanostructured multicrystalline silicon solar cells by a simple and industrially compatible technique of surface morphology modification. The nanostructures are prepared by Ag-catalyzed chemical etching and subsequent NaOH treatment with controllable geometrical parameters and surface area enhancement ratio. We have examined in detail the influence of different surface area enhancement ratios on reflectance, carrier recombination characteristics and cell performance. By conducting a quantitative analysis of these factors, we have successfully demonstrated a higher-than-traditional output performance of nanostructured multicrystalline silicon solar cells with a low average reflectance of 4.93%, a low effective surface recombination velocity of 6.59 m s−1, and a certified conversion efficiency of 17.75% on large size (156 × 156 mm2) silicon cells, which is ∼0.3% higher than the acid textured counterparts. The present work opens a potential prospect for the mass production of nanostructured solar cells with improved efficiencies. (paper)

  2. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

    International Nuclear Information System (INIS)

    Highlights: • LIFT technique is investigated to improve heterojunction HJ solar cells. • Doped silicon films are adequate precursors for LIFT application in HJ cells. • LIFT leads to a reduction of the series resistance of a-Si HJ diodes. • LIFT allows the improvement of the front contact resistance in a-Si HJ solar cells. - Abstract: In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J–V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency

  3. Plasma etching and its effect on minority charge carrier lifetimes and crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, S.; Lautenschlager, H.; Emanuel, G.; Luedemann, R. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany)

    2000-07-01

    Reactive ion etching (RIE), microwave enhanced RIE (MW-RIE), and microwave downstream etching (MWDSE) are investigated in terms of plasma-induced damage and its impact on minority charge carrier lifetimes in p-type silicon and on silicon solar cells. Ion bombardment and the gas mixture are found to be the crucial parameters in order to control the plasma-induced damage caused by SF{sub 6}/O{sub 2} plasma etching. RIE as well as MW-RIE processes can be optimised in a way that only minimum damage occurs. It may be annealed during temperature steps in the solar cell process, though. Only by dispensing with ion bombardment as in MWDSE plasma-induced damage can be completely avoided. Surface recombination velocities of S<10 cm/s are measured on 1 {omega}cm float zone silicon after MWDSE and SiN{sub x} passivation. MWDSE can therefore be used to substitute standard wet chemical cleaning of wafer surfaces without any loss in solar cell performance. (orig.)

  4. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  5. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, R.C.

    1980-11-01

    Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

  6. Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

    OpenAIRE

    Roca i Cabarrocas P.; Labrune M.; Cariou R.; Chakraborty S.; Chatterjee P

    2013-01-01

    We have previously reported on the successful deposition of heterojunction solar cells whose thin intrinsic crystalline absorber layer is grown using the standard radio frequency plasma enhanced chemical vapour deposition process at 165 °C on highly doped P-type (100) crystalline silicon substrates. The structure had an N-doped hydrogenated amorphous silicon emitter deposited on top of the intrinsic epitaxial silicon layer. However to form the basis of a solar cell, the epitaxial silicon film...

  7. Production of Solar-Grade Silicon by the SiF4 and Mg Reaction

    Science.gov (United States)

    Xie, Xiaobing; Bao, Jianer; Sanjurjo, Angel

    2016-08-01

    Over 90 pct of the solar cells currently produced and installed are Si based, and this industrial dominance is expected to persist for the foreseeable future. The crystalline Si substrate accounts for a significant portion of the total cost of solar cells. In order to further reduce the cost of solar panels, there has been significant effort in producing inexpensive solar-grade Si, mainly through three paths: (1) modification of the Siemens process to lower production costs, (2) upgrading metallurgical-grade Si to reach solar-grade purity, and (3) by means of new metallurgical processes such as the reduction of a silicon halide, e.g., SiF4 or SiCl4, by a reactive metal such as Na or Zn. In this paper, we describe an alternative path that uses Mg to react with SiF4 to produce low-cost solar grade Si. Experimental conditions for complete reaction and separation of the products, Si and MgF2, as well as aspects of the reaction mechanism are described. The reaction involves both a heterogeneous liquid-gas phase reaction and a homogeneous gas-gas phase reaction. When pure Mg was used, the Si product obtained had sub-ppm levels of B and P impurities and is expected to be suitable for solar cell applications.

  8. Optical management in high-efficiency thin-film silicon micromorph solar cells with a silicon oxide based intermediate reflector

    Energy Technology Data Exchange (ETDEWEB)

    Domine, Didier; Buehlmann, Peter; Bailat, Julien; Billet, Adrian; Feltrin, Andrea; Ballif, Christophe [Institute of Microtechnology (IMT), University of Neuchatel (Switzerland)

    2008-08-15

    In the effort to increase the stable efficiency of thin film silicon micromorph solar cells, a silicon oxide based intermediate reflector (SOIR) layer is deposited in situ between the component cells of the tandem device. The effectiveness of the SOIR layer in increasing the photo-carrier generation in the a-Si:H top absorber is compared for p-i-n devices deposited on different rough, highly transparent, front ZnO layers. High haze and low doping level for the front ZnO strongly enhance the current density (J{sub sc}) in the {mu}c-Si:H bottom cell whereas J{sub sc} in the top cell is influenced by the angular distribution of the transmitted light and by the reflectivity of the SOIR related to different surface roughness. A total J{sub sc} of 26.8 mA/cm{sup 2} and an initial conversion efficiency of 12.6% are achieved for 1.2 cm{sup 2} cells with top and bottom cell thicknesses of 300 nm and 3 {mu}m, and without any anti-reflective coating on the glass. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications

    Energy Technology Data Exchange (ETDEWEB)

    Anil Kumar, R.; Suresh, M.S. [ISRO Satellite Centre, ISRO, Bangalore 560, 017 Kolhapur (India); Nagaraju, J. [Department of Instrumentation, Indian Institute of Science, Bangalore 560, 012 Kolhapur (India)

    2000-01-15

    The AC parameters of silicon (BSR and BSFR) solar cells and GaAs/Ge solar cell have been measured using impedance spectroscopy. Each cell capacitance, dynamic resistance and series resistance were measured and compared. GaAs/Ge solar cell has shown only the transition capacitance throughout its operating range while silicon (BSR and BSFR) solar cells exhibited both transition and diffusion capacitance. The theoretical and experimental values of dynamic resistance were compared and found in good agreement while the diode factor in silicon solar cells varies from 2 to 1, where as in GaAs/Ge solar cell it varies from 4 to 2 to 1.

  10. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    Science.gov (United States)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  11. Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells

    Science.gov (United States)

    Haase, F.; Eidelloth, S.; Horbelt, R.; Bothe, K.; Garralaga Rojas, E.; Brendel, R.

    2011-12-01

    We investigate power losses in back-contact back-junction monocrystalline thin-film silicon solar cells fabricated using the porous silicon layer transfer process. Our loss analysis combines two-dimensional finite element modeling and resistance network simulations. The input parameters of the finite element modeling are determined experimentally by measuring saturation current densities and sheet resistances on test samples prepared identically to the solar cells. Characteristic solar cell parameters such as short circuit current, open circuit voltage, fill factor, and efficiency of measured and network simulated current voltage characteristics investigated in this study match within an uncertainty of 5%. Free energy loss analysis serves as comparison of all losses in units of power per area at the maximum power point. The largest loss is bulk recombination due to a carrier lifetime of 2 μs in the epitaxial Si layer. Further significant losses result from recombination at the base contacts characterized by a diode saturation current density of 50 000 fA cm-2 as well as resistive losses due to lateral majority carrier current flows within the solar cell base and contact resistance losses.

  12. Viability study of porous silicon photonic mirrors as secondary reflectors for solar concentration systems

    Energy Technology Data Exchange (ETDEWEB)

    de la Mora, M.B.; Jaramillo, O.A.; Nava, R.; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, A. P. 34, 62580 Temixco, Morelos (Mexico); del Rio, J.A. [Centro Morelense de Innovacion y Transferencia Tecnologica, CCyTEM Camino Temixco a Emiliano Zapata, Km 0.3, Colonia Emiliano Zapata, 62760 Morelos (Mexico)

    2009-08-15

    In this paper we report the viability of using porous silicon photonic mirrors (PSPM) as secondary reflectors in solar concentration systems. The PSPM were fabricated with nanostructured porous silicon to reflect light from the visible range to the near infrared region (500-2500 nm), although this range could be tuned for specific wavelength applications. Our PSPM are multilayers of two alternated refractive indexes (1.5 and 2.0), where the condition of a quarter wavelength in the optical path was imposed. The PSPM were exposed to high radiation in a solar concentrator equipment. As a result, we observed a significant degradation of the mirrors at an approximated temperature of 900 C. In order to analyze the origin of the degradation of PSPM, we model the samples with a non-linear optical approach and study the effect of a temperature increase. Those theoretical and experimental studies allow us to conclude that the main phenomenon involved in the breakdown of the photonic mirrors is of thermal origin, produced by heterogeneous expansion of each layer. Our next step was to introduce a cooling system into the solar concentrator to keep the mirrors at approximately 70 C, with very good results. As a conclusion we propose the use of PSPM as selective secondary mirrors in solar concentration devices using temperature control to avoid thermal degradation. (author)

  13. Review of Back Contact Silicon Solar Cells for Low-Cost Application

    Energy Technology Data Exchange (ETDEWEB)

    Smith, David D.

    1999-08-04

    Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.

  14. Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Zheng Xin-Xia; Xu Sheng-Zhi; Lin Quan; Wei Chang-Chun; Sun Jian; Geng Xin-Hua; Zhao Ying

    2011-01-01

    We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates.The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO.By controlling boron and phosphorus contaminations,a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm.In tandem devices,by thickness optimization of the microcrystalline silicon bottom solar cell,we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer.In order to enhance the performance of the tandem solar cells,an improved light trapping structure with a ZnO/Al back reflector is used.As a result,a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.

  15. Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

    Science.gov (United States)

    Zhang, Xiao-Dan; Zheng, Xin-Xia; Xu, Sheng-Zhi; Lin, Quan; Wei, Chang-Chun; Sun, Jian; Geng, Xin-Hua; Zhao, Ying

    2011-10-01

    We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.

  16. Capacitance and conductance studies on silicon solar cells subjected to 8 MeV electron irradiations

    International Nuclear Information System (INIS)

    The space grade silicon solar cells were irradiated with 8 MeV electrons with doses ranging from 5–100 k Gy. Capacitance and conductance measurements were carried out in order to investigate the anomalous degradation of the cells in the radiation harsh environments and the results are presented in this paper. Detailed and systematic analysis of the frequency-dependent capacitance and conductance measurements were performed to extract the information about the interface trap states. The small increase in density of interface states was observed from the conductance–frequency measurements. The reduction in carrier concentration upon electron irradiation is due to the trapping of charge carriers by the radiation induced trap centres. The Drive Level Capacitance Profiling (DLCP) technique has been applied to study the properties of defects in silicon solar cells. A small variation in responding state densities with measuring frequency was observed and the defect densities are in the range 1015 –1016 cm−3. - Highlights: • Space grade Si solar cells were subjected to 8 MeV electron radiation. • Capacitance and conductance measurements were done before and after irradiation. • Density of interface states and the interface trap time constant is found to increase with increasing electron dose. • The displacement damage formed due to electron is not uniform throughout the active region of c-Si solar cell

  17. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al2O3, we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al2O3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al2O3 film. • Ozone-based Al2O3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  18. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

  19. Defect annealing processes for polycrystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steffens, S., E-mail: simon.steffens@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Berlin (Germany); Becker, C. [Helmholtz-Zentrum Berlin, Berlin (Germany); Zollondz, J.-H., E-mail: hzollondz@masdarpv.com [CSG Solar AG, Thalheim (Germany); Chowdhury, A.; Slaoui, A. [L’Institut d’Électronique du Solide et des Systèmes, Strasbourg (France); Lindekugel, S. [Fraunhofer-Institut für Solare Energiesysteme, Freiburg (Germany); Schubert, U.; Evans, R. [Suntech R and D Australia Pty Ltd, Sydney (Australia); Rech, B. [Helmholtz-Zentrum Berlin, Berlin (Germany)

    2013-05-15

    Highlights: ► Defect annealing processes were applied to polycrystalline silicon thin films. ► Conventional rapid thermal annealing was compared to novel annealing processes using a laser system and a zone-melting recrystallization setup. ► The open circuit voltages could be enhanced from below 170 mV up to 482 mV. ► Increase in Sun's-V{sub OC} values with decrease in FWHM of the TO Raman phonon of crystalline silicon. ► Solar cells were fabricated for I–V-measurements: Best solar cell efficiency of 6.7%. -- Abstract: A variety of defect healing methods was analyzed for optimization of polycrystalline silicon (poly-Si) thin-film solar cells on glass. The films were fabricated by solid phase crystallization of amorphous silicon deposited either by plasma enhanced chemical vapor deposition (PECVD) or by electron-beam evaporation (EBE). Three different rapid thermal processing (RTP) set-ups were compared: A conventional rapid thermal annealing oven, a dual wavelength laser annealing system and a movable two sided halogen lamp oven. The two latter processes utilize focused energy input for reducing the thermal load introduced into the glass substrates and thus lead to less deformation and impurity diffusion. Analysis of the structural and electrical properties of the poly-Si thin films was performed by Suns-V{sub OC} measurements and Raman spectroscopy. 1 cm{sup 2} cells were prepared for a selection of samples and characterized by I–V-measurements. The poly-Si material quality could be extremely enhanced, resulting in increase of the open circuit voltages from about 100 mV (EBE) and 170 mV (PECVD) in the untreated case up to 480 mV after processing.

  20. Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ryningen, Birgit

    2008-07-01

    Included in this thesis are five publications and one report. The common theme is characterisation of directionally solidified multicrystalline silicon for solar cells. Material characterisation of solar cell silicon is naturally closely linked to both the casting process and to the solar cell processing: Many of the material properties are determined by the casting process, and the solar cell processing will to some extend determine which properties will influence the solar cell performance. Solar grade silicon (SoG-Si) made by metallurgical refining route and supplied by Elkem Solar was directionally solidified and subsequently characterised, and a simple solar cell process was applied. Except from some metallic co-precipitates in the top of the ingot, no abnormalities were found, and it is suggested that within the limits of the tests performed in this thesis, the casting and the solar cell processing, rather than the assumed higher impurity content, was the limiting factor. It is suggested in this thesis that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. The clusters will reduce the effect of gettering and even if gettering could be performed successfully, the clusters will still reduce the minority carrier mobility and hence the solar cell performance. It has further been pointed out that ingots solidified under seemingly equal conditions might have a pronounced difference in minority carrier lifetime. Ingots with low minority carrier lifetime have high dislocation densities. The ingots with the substantially higher lifetime seem all to be dominated by twins. It is also found a link between a higher undercooling and the ingots dominated by twins. It is suggested that the two types of ingots are subject to different nucleation and crystal growth mechanisms: For the ingots dominated by dislocations, which are over represented, the crystal growth is randomly nucleated at the

  1. Silicon Heterojunction Solar Cells: Temperature Impact on Passivation and Performance

    Energy Technology Data Exchange (ETDEWEB)

    Seif, J.; Krishnamani, G.; Demaurex, B.; Martin de Nicholas, S.; Holm, N.; Ballif, C.; De Wolf, S.

    2015-03-23

    Photovoltaic devices deployed in the field can reach operation temperatures (T) as high as 90 °C [1]. Hence, their temperature coefficients (TC1) are of great practical importance as they determine their energy yield. In this study we concentrate on T-related lifetime variations of amorphous/crystalline interfaces and study their influence on the TCs of the individual solar cell parameters. We find that both the open-circuit voltage (Voc) and fill factor (FF) are influenced by these lifetime variations. However, this is only a minor effect compared to the dominant increase of the intrinsic carrier density and the related increase in dark saturation current density. Additionally, in this paper we will show that the TCVoc does not depend solely on the initial value of the Voc [2, 3], but that the structure of the device has to be considered as well.

  2. Accelerated stress testing of amorphous silicon solar cells

    Science.gov (United States)

    Stoddard, W. G.; Davis, C. W.; Lathrop, J. W.

    1985-01-01

    A technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.

  3. Glass frits coated with silver nanoparticles for silicon solar cells

    Science.gov (United States)

    Li, Yingfen; Gan, Weiping; Zhou, Jian; Li, Biyuan

    2015-06-01

    Glass frits coated with silver nanoparticles were prepared by electroless plating. Gum Arabic (GA) was used as the activating agent of glass frits without the assistance of stannous chloride or palladium chloride. The silver-coated glass frits prepared with different GA dosages were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and thermogravimetric analysis (TGA). The characterization results indicated that silver-coated glass frits had the structures of both glass and silver. Spherical silver nanoparticles were distributed on the glass frits evenly. The density and particle size of silver nanoparticles on the glass frits can be controlled by adjusting the GA dosage. The silver-coated glass frits were applied to silver pastes to act as both the densification promoter and silver crystallite formation aid in the silver electrodes. The prepared silver-coated glass frits can improve the photovoltaic performances of solar cells.

  4. Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Kai; Schiff, E.A. [Department of Physics, Syracuse University, 13244-1130 Syracuse, NY (United States); Ganguly, G. [BP Solar, 23168 Toano, VA (United States)

    2002-04-01

    We report infrared depletion modulation spectra for near-interface states in a-Si pin solar cells. The effect of additional visible illumination (optical bias) was explored as a means to separate the spectra for n/i and p/i interface states. We found a sharp, optical bias-induced spectral line near 0.8 eV. We attribute this line due to internal optical transitions of dopant-defect complexes in the a-SiC:H:B p-layer of the cells. We discuss the spatial location of the depletion modulation regions, and suggest that this location shifts across the n/i and p/i interfaces for cells with differing deposition and illumination conditions.

  5. CO2 laser annealing of 50-microns-thick silicon solar cells

    Science.gov (United States)

    Walker, F. E.

    1979-01-01

    A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

  6. New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells

    Science.gov (United States)

    Kurobe, Ken-ichi; Matsunami, Hiroyuki

    2005-12-01

    In order to extract electrical properties of multicrystalline silicon (Mx-Si) solar cells precisely, current-voltage (I-V) measurement in the dark condition was carried out. A new two-diode model, which includes a diffusion-current dominant area (DCA) and a recombination-current dominant area (RCA), with nonequivalent series resistances, was proposed as a new equivalent circuit. Electrical properties as fitting parameters were successfully extracted using a successive approximation method. This characterization derived J01 and J02, which are the diode saturation current densities for n=1 and 2 diodes, respectively. To ensure this diode model, temperature characteristics were measured, and the validity of this model was shown through calculation of the energy band gap from J01. J01 and J02 indicate a power factor and a loss factor of solar cells, respectively, which are newly proposed to classify solar cell performance.

  7. Laser annealing of amorphous/poly: Silicon solar cell material flight experiment

    Science.gov (United States)

    Cole, Eric E.

    1990-01-01

    The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment.

  8. On the nature of striations in n-type silicon solar cells

    Science.gov (United States)

    Le Donne, Alessia; Binetti, Simona; Folegatti, Valerio; Coletti, Gianluca

    2016-07-01

    In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as striations) can cause degradation up to 1% absolute or even more in homojunction industrial solar cells. Nevertheless, the nature of the defects responsible for the occurrence of these striations is still unclear. In this work, n-type Cz-Si solar cell precursors cut from industrial size ingots with different feedstock quality and oxygen content were analyzed by microwave photo-conductance decay and photoluminescence in order to investigate the nature of such defects. The results demonstrate that the defects responsible for the occurrence of striations are oxide nanoprecipitates formed during the high temperature steps for the solar cell realization, due to the presence of grown-in oxygen nuclei.

  9. Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications

    Institute of Scientific and Technical Information of China (English)

    YANG Cheng; ZHANG Gang; LEE Dae-Young; LI Hua-Min; LIM Young-Dae; Y00 Won Jong; PARK Young-Jun; KIM Jong-Min

    2011-01-01

    Self-assembly of silicon nanowire(SiNW)arrays is studied using SF6/02 plasma treatment. The self-assembly method can be applied to single- and poly-crystalline Si substrates. Plasma conditions can control the length and diameter of the SiNW arrays. Lower reflectance of the wire arrays over the wavelength range 200-1100nm is obtained. The conducting transparent indium-tin-oxide(ITO) electrode can be fully coated on the self-assembled SiNW arrays by sputtering. The ITO-coated SiNW solar cells show the same low surface light reflectance and a higher carrier collection efficiency than SiNW solar cells without ITO coating. An efficiency enhancement of around 3 times for ITO coated SiNW solar cells is demonstrated via experiments.

  10. Research on the optimum hydrogenated silicon thin films for application in solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃. The electrical,structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current-voltage (Ⅰ - Ⅴ) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

  11. Wireless Solar Water Splitting Using Silicon-Based Semiconductors and Earth-Abundant Catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Reece, SY; Hamel, JA; Sung, K; Jarvi, TD; Esswein, AJ; Pijpers, JJH; Nocera, DG

    2011-11-03

    We describe the development of solar water-splitting cells comprising earth-abundant elements that operate in near-neutral pH conditions, both with and without connecting wires. The cells consist of a triple junction, amorphous silicon photovoltaic interfaced to hydrogen- and oxygen-evolving catalysts made from an alloy of earth-abundant metals and a cobalt|borate catalyst, respectively. The devices described here carry out the solar-driven water-splitting reaction at efficiencies of 4.7% for a wired configuration and 2.5% for a wireless configuration when illuminated with 1 sun (100 milliwatts per square centimeter) of air mass 1.5 simulated sunlight. Fuel-forming catalysts interfaced with light-harvesting semiconductors afford a pathway to direct solar-to-fuels conversion that captures many of the basic functional elements of a leaf.

  12. Enhanced light trapping with double-groove grating in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wu, Jun

    2016-05-01

    A design to enhance light absorption in thin-film amorphous silicon (a-Si) solar cells is proposed. It is achieved by patterning a double-groove grating with waveguide layer as the absorbing layer and coating a double-groove grating anti-reflective layer in the front window of the cell. The broadband absorption under normal incidence can be achieved for both TE and TM polarizations. It is shown that the averaged integrated absorptions have very large angle independence for the optimized solar cell. An qualitative understanding of such broadband enhanced absorption effect, which is attributed to the guided mode resonance, is presented. The conclusions can be exploited to guide the design of solar cells based on a grating structure.

  13. Silicon-on ceramic process. Silicon sheet growth and device developmentt for the Large-Area Silicon Sheet Task of the Low-Cost Solar Array Project. Quarterly report No. 13, October 1-December 31, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P W; Zook, J D; Grung, B L; McHenry, K; Schuldt, S B

    1980-02-15

    Research on the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon is reported. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 11 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A variety of ceramic materials have been dip coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO/sub 2/ best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm/sup 2/ in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Crystal length is limited by the length of the substrate. The thickness of the coating and the size of the crystalline grains are controlled by the temperature of the melt and the rate at which the substrate is withdrawn from the melt. The solar-cell potential of this SOC sheet silicon is promising. To date, solar cells with areas from 1 to 10 cm/sup 2/ have been fabricated from material with an as-grown surface. Conversion efficiencies of about 10 percent with antireflection (AR) coating have been achieved. Such cells typically have open-circuit voltage and short-circuit current densities of 0.55V and 23 mA/cm/sup 2/, respectively.

  14. Systematic Analysis of Diffuse Rear Reflectors for Enhanced Light Trapping in Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Pfeffer, Florian; Eisenlohr, Johannes; Basch, Angelika; Hermle, Martin; Lee, Benjamin G.; Goldschmidt, Jan Christoph

    2016-08-01

    Simple diffuse rear reflectors can enhance the light path length of weakly absorbed near infrared light in silicon solar cells and set a benchmark for more complex and expensive light trapping structures like dielectric gratings or plasmonic particles. We analyzed such simple diffuse rear reflectors systematically by optical and electrical measurements. We applied white paint, TiO2 nanoparticles, white backsheets and a silver mirror to bifacial silicon solar cells and measured the enhancement of the external quantum efficiency for three different solar cell geometries: planar front and rear side, textured front and planar rear side, and textured front and rear side. We showed that an air-gap between the solar cell and the reflector decreases the absorption enhancement significantly, thus white paint and TiO2 nanoparticles directly applied to the rear cell surface lead to the highest short circuit current density enhancements. The short circuit current density gains for a 200 um thick planar solar cell reached up to 1.8 mA/cm2, compared to a non-reflecting black rear side and up to 0.8 mA/cm2 compared to a high-quality silver mirror rear side. For solar cells with textured front side the short circuit current density gains are in the range between 0.5 and 1.0 mA/cm2 compared to a non-reflecting black rear side and do not significantly depend on the angular characteristic of the rear side reflector but mainly on its absolute reflectance.

  15. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Derbali, L., E-mail: rayan.slat@yahoo.fr [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia); Ezzaouia, H. [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia)

    2012-08-01

    Highlights: Black-Right-Pointing-Pointer Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. Black-Right-Pointing-Pointer An efficient surface passivation can be obtained after thermal treatment of obtained films. Black-Right-Pointing-Pointer Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 Degree-Sign C. Vanadium pentoxide (V{sub 2}O{sub 5}) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 Degree-Sign C and 800 Degree-Sign C, under O{sub 2} atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  16. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures

    Science.gov (United States)

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-07-01

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells.We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the

  17. ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

    Directory of Open Access Journals (Sweden)

    Peter Pikna

    2014-10-01

    Full Text Available Thin film polycrystalline silicon (poly-Si solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ. Tested temperature of the sample (55°C – 110°C was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

  18. Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency

    Science.gov (United States)

    Stuckelberger, M.; Despeisse, M.; Bugnon, G.; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C.

    2013-10-01

    Several amorphous silicon (a-Si:H) deposition conditions have been reported to produce films that degrade least under light soaking when incorporated into a-Si:H solar cells. However, a systematic comparison of these a-Si:H materials has never been presented. In the present study, different plasma-enhanced chemical vapor deposition conditions, yielding standard low-pressure VHF a-Si:H, protocrystalline, polymorphous, and high-pressure RF a-Si:H materials, are compared with respect to their optical properties and their behavior when incorporated into single-junction solar cells. A wide deposition parameter space has been explored in the same deposition system varying hydrogen dilution, deposition pressure, temperature, frequency, and power. From the physics of layer growth, to layer properties, to solar cell performance and light-induced degradation, a consistent picture of a-Si:H materials that are currently used for a-Si:H solar cells emerges. The applications of these materials in single-junction, tandem, and triple-junction solar cells are discussed, as well as their deposition compatibility with rough substrates, taking into account aspects of voltage, current, and charge collection. In sum, this contributes to answering the question, "Which material is best for which type of solar cell?"

  19. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  20. Novel Ceramic Additives for Screen-Printable Silicon Solar Cell Metallization

    Science.gov (United States)

    Shih, Yu-Chou; Shao, Yue; Shi, Frank G.

    2016-08-01

    The interfacial structure between front-side silver electrodes and n-type silicon emitters plays a very crucial role for the electrical and mechanical properties of silicon solar cells. Studies show that the residual glass layers at the Ag/Si interfaces will significantly increase the contact resistance, and this subsequently leads to a decrease in the overall efficiency of the silicon solar cells. In this work, silver-coated nano-sized non-glass frits using an electroless plating method were employed to improve the interfacial conductivity. Transfer length method was applied to evaluate the electrical performance of the samples made with different ceramic additives. For samples made with nano-sized silver-coated ceramic additives, the improvement of conductivity was found to be about 22% compared to additives with the same compositions with no surface treatment. The results indicate that the silver layer on the surface of ceramic additives provides a conducting channel within the residual insulating layer and therefore reduces overall electrical resistance.

  1. Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Montesdeoca-Santana, A. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen, Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Departamento de Energia Fotovoltaica, Instituto Tecnologico y de Energias Renovables. Poligono Industrial de Granadilla s/n, 38600 San Isidro-Granadilla de Abona (Spain); Jimenez-Rodriguez, E. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Ziegler, J. [Fraunhofer Institute for Solar Energy Systems, Laboratory- and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Velazquez, J.J. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna. Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Hohage, S.; Borchert, D. [Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Guerrero-Lemus, R., E-mail: rglemus@ull.es [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain)

    2011-11-15

    Highlights: > An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO{sub 3} stain etching to texture the surface. > FTIR analysis shows no influence of oxide passivation in this effect. > SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. > LBIC images show a reduction in IQE at extended defects in HF/HNO{sub 3} textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO{sub 3} solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

  2. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  3. Numerical Study of TCO/Silicon Solar Cells with Novel Back Surface Field

    Science.gov (United States)

    Boumaour, M.; Sali, S.; Bahfir, A.; Kermadi, S.; Zougar, L.; Ouarab, N.; Larabi, A.

    2016-08-01

    ZnS/Si/CuO heterostructure is investigated by a theoretical approach as a possible low-cost design for photovoltaic conversion in the track of the heterojunction with intrinsic thin layer solar cells. Our results indicate that, owing to perfect electron affinity and lattice matching properties, zinc sulfide with adequate Al doping can efficiently replace zinc oxide window layer as an emitter region for silicon-based solar cells. Lattice mismatch, energy band alignment at the interfaces and material resistivity are the framework parameters of the study. By focusing on the open circuit voltage parameter, the back metal/Si and silicon base doping were optimized so that the conversion efficiency was increased from 3.37% to 15.19%. The introduction of a cupric oxide (CuO) layer acting as a p + back surface field with a bandgap of 1.35 eV and appropriate doping as high as 7 × 1018 cm-3 can enhance the conversion efficiency to 17.30%, provided that the silicon material remains free from contamination by copper atoms and also by performing a suitable treatment of CuO to lower its resistivity.

  4. Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Seung Hui; Kim, Yong Sung; Lee, Woo; Kim, Young Heon; Song, Jae Yong; Jang, Jong Shik; Park, Jae Hee; Kim, Kyung Joong [Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejeon (Korea, Republic of); Choi, Suk-Ho, E-mail: kjkim@kriss.re.kr [Department of Applied Physics, Kyung Hee University, Yongin 446-701 (Korea, Republic of)

    2011-10-21

    Active doping of B was observed in nanometer silicon layers confined in SiO{sub 2} layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of [SiO{sub 2} (8 nm)/B-doped Si(10 nm)]{sub 5} films turned out to be segregated into the Si/SiO{sub 2} interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above 1.1 x 10{sup 20} atoms cm{sup -3} and high active doping of 3 x 10{sup 20} atoms cm{sup -3} could be achieved. The active doping in ultra-thin Si layers was implemented for silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy-conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of 4 x 10{sup 20} atoms cm{sup -3}.

  5. 15% Power Conversion Efficiency from a Gated Nanotube/Silicon Nanowire Array Solar Cell

    Science.gov (United States)

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-03-01

    Despite their enhanced light trapping ability the performance of silicon nanowire array solar cells have, been stagnant with power conversion efficiencies barely breaking 10%. The problem is understood to be the consequence of a high photo-carrier recombination at the large surface area of the Si nanowire sidewalls. Here, by exploiting 1) electronic gating via an ionic liquid electrolyte to induce inversion in the n-type Si nanowires and 2) using a layer of single wall carbon nanotubes engineered to contact each nanowire tip and extract the minority carriers, we demonstrate silicon nanowire array solar cells with power conversion efficiencies of 15%. Our results allow for discrimination between the two principle means of avoiding front surface recombination: surface passivation and the use of local fields. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue a non-encapsulation based solution is also described. We gratefully acknowledge support from the National Science Foundation under ECCS-1232018.

  6. In-line high-rate evaporation of aluminum for the metallization of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mader, Christoph Paul

    2012-07-11

    This work focuses on the in-line high-rate evaporation of aluminum for contacting rear sides of silicon solar cells. The substrate temperature during the deposition process, the wafer bow after deposition, and the electrical properties of evaporated contacts are investigated. Furthermore, this work demonstrates for the first time the formation of aluminum-doped silicon regions by the in-line high-rate evaporation of aluminum without any further temperature treatment. The temperature of silicon wafers during in-line high-rate evaporation of aluminum is investigated in this work. The temperatures are found to depend on the wafer thickness W, the aluminum layer thickness d, and on the wafer emissivity {epsilon}. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 97%. This work also investigates the wafer bow after in-line high-rate evaporation and shows that the elastic theory overestimates the wafer bow of planar Si wafers. The lower bow is explained with plastic deformation in the Al layer. Due to the plastic deformation only the first 79 K in temperature decrease result in a bow formation. Furthermore the electrical properties of evaporated point contacts are examined in this work. Parameterizations for the measured saturation currents of contacted p-type Si wafers and of contacted boron-diffused p{sup +}-type layers are presented. The contact resistivity of the deposited Al layers to silicon for various deposition processes and silicon surface concentrations are presented and the activation energy of the contact formation is determined. The measured saturation current densities and contact resistivities of the evaporated contacts are used in one-dimensional numerical Simulations and the impact on energy conversion efficiency of replacing a screen-printed rear side by an evaporated rear side is presented. For the first time the formation of aluminum-doped p{sup +}-type (Al-p{sup +}) silicon regions by the in

  7. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    Science.gov (United States)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  8. Coplanar back contacts for thin silicon solar cells

    Science.gov (United States)

    Storti, G.; Scheinine, A.; Whitehouse, D.; Wohlgemuth, J.; Wrigley, C.; Giuliano, M.

    1981-01-01

    The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.

  9. Towards high-efficiency thin-film silicon solar cells with the `micromorph` concept

    Energy Technology Data Exchange (ETDEWEB)

    Meier, J.; Dubail, S.; Platz, R.; Torres, P.; Kroll, U.; Selvan, J.A. Anna; Vaucher, N. Pellaton; Hof, Ch.; Fischer, D.; Keppner, H.; Flueckiger, R.; Shah, A. [Institut de Microtechnique, A.L., Universite de Neuchatel, Neuchatel (Switzerland); Shklover, V. [ETH Zuerich, Laboratorium fuer Kristallographie, Zuerich (Switzerland); Ufert, K.D. [Siemens Solar, Muenchen (Germany)

    1997-10-21

    Tandem solar cells with a microcrystalline silicon bottom cell (1 eV gap) and an amorphous-silicon top cell (1.7 eV gap) have recently been introduced by the authors; they were designated as `micromorph` tandem cells. As of now, stabilised efficiencies of 11.2% have been achieved for micromorph tandem cells, whereas a 10.7% cell is confirmed by ISE Freiburg. Micromorph cells show a rather low relative temperature coefficient of 0.27%/K. Applying the grain-boundary trapping model so far developed for CVD polysilicon to hydrogenated microcrystalline silicon deposited by VHF plasma, an upper limit for the average defect density of around 2x10{sup 16}/cm{sup 3} could be deduced; this fact suggests a rather effective hydrogen passivation of the grain-boundaries. First TEM investigations on {mu}c-Si:H p-i-n cells support earlier findings of a pronounced columnar grain structure. Using Ar dilution, deposition rates of up to 9 Angstrom/s for microcrystalline silicon could be achieved

  10. Al and Cu Implantation into Silicon Substrate for Ohmic Contact in Solar Cell Fabrication

    International Nuclear Information System (INIS)

    Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 1013 ion/cm2 - 1016 ion/cm2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 oC - 850 oC. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρs for N type was 1.30 x 108 Ω/sq, this was achieved at ion dose 1013 ion/cm2 and annealing temperature 500 oC. While for P type, the ρs was 1.13 x 102 Ω/sq, this was achieved at ion dose 1013 ion/cm2 and energy 40 keV, and annealing temperature 500 oC. (author)

  11. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    Science.gov (United States)

    Liu, Y.

    2010-02-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modules on a plastic substrate. The first objective includes the development of suitable ZnO:Al TCO for nc Si:H single junction solar cells, fabrication of the aimed micromorph tandem solar cells on glass, and finally the optimization of the nc-Si:H i-layer for the depositions afterwards on Al foil. Chapter 3 addresses the improvement of texture etching of ZnO:Al by studying the HCl etching effect on ZnO:Al films sputter-deposited in a set substrate heater temperature series. With the texture-etched ZnO:Al front TCO, a single junction nc-Si:H solar cell was deposited with an initial efficiency of 8.33%. Chapter 4 starts with studying the light soaking and annealing effects on micromorph tandem solar cell. In the end, a highly stabilized bottom cell current limited tandem cell was made. The tandem shows an initial efficiency of 10.2%, and degraded only 6.9% after 1600 h of light soaking. In Chapter 5, the nc-Si:H i-layers were studied in 3 pressure and inter-electrode distance series. The correlations between plasma physics and the consequent i-layers’ properties are investigated. We show that the Raman crystalline ratio and porosity of the nc-Si:H layer have an interesting relation with the p•d product. By varying p and d, device quality nc-Si:H layer can be deposited at a high rate of 0.6 nm/s. These results in fact are a very important step for the second objective. The second objective is covered by the entire Chapter 6. All silicon layers are deposited on special aluminum

  12. Amorphous silicon thin films: The ultimate lightweight space solar cell

    Science.gov (United States)

    Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

    1994-01-01

    Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

  13. Irradiation and measurements of fluorinated ethylene-propylene-A on silicon solar cells in vacuum

    Science.gov (United States)

    Marsik, S. J.; Broder, J. D.

    1975-01-01

    Silicon monoxide (SiO) coated silicon solar cells covered with fluorinated ethylene-propylene-A (FEP-A) were irradiated by 1-MeV electrons in vacuum. The effect of irradiation on the light transmittance of FEP-A was checked by measuring the short-circuit current of the cells while in vacuum after each dose increment, immediately after the irradiation, and again after a minimum elapsed time of 16 hr. The results indicated no apparent loss in transmission due to irradiation of FEP-A and no delamination from the SiO surface while the cells were in vacuum, but embrittlement of FEP-A occurred at the accumulated dose.

  14. Flexible concentrator photovoltaics based on microscale silicon solar cells embedded in luminescent waveguides.

    Science.gov (United States)

    Yoon, Jongseung; Li, Lanfang; Semichaevsky, Andrey V; Ryu, Jae Ha; Johnson, Harley T; Nuzzo, Ralph G; Rogers, John A

    2011-06-14

    Unconventional methods to exploit monocrystalline silicon and other established materials in photovoltaic (PV) systems can create new engineering opportunities, device capabilities and cost structures. Here we show a type of composite luminescent concentrator PV system that embeds large scale, interconnected arrays of microscale silicon solar cells in thin matrix layers doped with luminophores. Photons that strike cells directly generate power in the usual manner; those incident on the matrix launch wavelength-downconverted photons that reflect and waveguide into the sides and bottom surfaces of the cells to increase further their power output, by more than 300% in examples reported here. Unlike conventional luminescent photovoltaics, this unusual design can be implemented in ultrathin, mechanically bendable formats. Detailed studies of design considerations and fabrication aspects for such devices, using both experimental and computational approaches, provide quantitative descriptions of the underlying materials science and optics.

  15. Influence of ITO-Silver Wire Electrode Structure on the Performance of Single-Crystal Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Wern-Dare Jheng

    2012-01-01

    Full Text Available This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO and the high conductivity of the silver wire that were coated on the single crystal silicon solar cells increased photoelectron export, thus increasing the efficiency of the solar cell. The experiment utilized a sol-gel solution containing phosphorus that was spin coated on single-crystal silicon wafers; this phosphorus also served as a phosphorus diffusion source. A p-n junction was formed after annealing at high temperature, and the substrate was coated with silver wires and ITO films of various structures to produce the electrodes. This study proposed that applying a heat treatment to the aluminum of back electrodes would result in a higher efficiency for single-crystal silicon solar cells, whereas single-crystal silicon solar cells containing front electrodes with ITO film coated with silver wires would result in efficiencies that are higher than those achieved using pure ITO thin-film electrodes.

  16. Study on the SiN_x/Al rear reflectance performance of crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The performance of internal rear surface reflectance of crystalline silicon solar cells is becoming more and more important with the decrease of thickness of the silicon wafers. In this paper PC1D was used to simulate the correlations between the rear surface reflectance and the electrical as well as optical properties of the solar cells. The results showed that the short circuit current, open circuit voltage and quantum efficiency were all enhanced with the increase of the rear reflectance. When the rear reflectance increased from 60% to 100%, the short circuit current, open circuit voltage and maximum output power were improved by about 0.128 A, 0.007 V, and 0.066 W, respectively. The internal quantum efficiency was improved by 39.9%, the external quantum increased by 17.4%, and the efficiency of the solar cells was enhanced by 0.4% at 1100 nm wavelength. The screen-printing was selected to prepare SiNx/Al reflector, and experimental results showed that the SiNx/Al reflector has desired characteristic of internal rear reflectance, with the reflectivity of 15% higher than that of conventional aluminum BSF at 1100 nm wavelength.

  17. Design and optimization of Ag-dielectric core-shell nanostructures for silicon solar cells

    Directory of Open Access Journals (Sweden)

    Feng-Xiang Chen

    2015-09-01

    Full Text Available Metal-dielectric core-shell nanostructures have been proposed as a light trapping scheme for enhancing the optical absorption of silicon solar cells. As a potential application of such enhanced effects, the scattering efficiencies of three core-shell structures (Ag@SiO2, Ag@TiO2, and Ag@ZrO2 are discussed using the Mie Scattering theory. For compatibility with experiment results, the core diameter and shell thickness are limited to 100 and 30 nm, respectively, and a weighted scattering efficiency is introduced to evaluate the scattering abilities of different nanoparticles under the solar spectrum AM 1.5. The simulated results indicate that the shell material and thickness are two key parameters affecting the weighted scattering efficiency. The SiO2 is found to be an unsuitable shell medium because of its low refractive index. However, using the high refractive index mediumTiO2 in Ag@TiO2 nanoparticles, only the thicker shell (30 nm is more beneficial for light scattering. The ZrO2 is an intermediate refractive index material, so Ag@ZrO2 nanoparticles are the most effective core-shell nanostructures in these silicon solar cells applications.

  18. Flexible amorphous silicon solar cells and their application to PV systems

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Y.; Fujikake, S.; Yoshida, T.; Sakai, H.; Natsume, F. [Fuji Electric Co. Ltd., Yokosuka, Kanagawa (Japan). New Energy Lab.

    1996-12-31

    Hydrogenated amorphous silicon (a-Si:H) solar cells are regarded as the next generation product following crystalline silicon (c-Si) solar cells. The performance of the large area cells has been improved to a practical application level and the durability has been confirmed by a number of outdoor tests at demonstration sites under various climatic conditions. The mass production technology for realizing low cost a-Si photovoltaic (PV) modules, however, has not been developed very well and is still in an elementary stage. A flexible a-Si:H PV module has been developed, which is rolled up around a cylindrical core, has a width of about 1 m, and is able to be cut to any length. The amorphous solar cell fabricated on a heat resistant plastic film with a thickness of 50 {mu}m has a new monolithic series connected structure named SCAF (Series-Connection through Apertures formed on Film) to obtain a high output voltage required for practical use. The details of the structure and the technology of the fabrication process are described as well as some of its applications. (author). 11 figs., 3 refs.

  19. Application of gold nano-particles for silicon solar cells efficiency increase

    Energy Technology Data Exchange (ETDEWEB)

    Axelevitch, A., E-mail: alex_a@hit.ac.il [Holon Institute of Technology (HIT), 52 Golomb St., Holon 5810201 (Israel); Gorenstein, B. [Holon Institute of Technology (HIT), 52 Golomb St., Holon 5810201 (Israel); Golan, G. [Holon Institute of Technology (HIT), 52 Golomb St., Holon 5810201 (Israel); 52 Golomb St., Holon 5810201, Israel and Ort Hermelin Academic College, 2 Hamehkar St. , Netania 4250401 (Israel)

    2014-10-01

    Graphical abstract: - Highlights: • Imbedded gold islands between emitter and base of a silicon diode represent a set of forward biased Schottky diodes. • Excited localized surface plasmon-polaritons by sunlight irradiated within the gold islands, generate additional electron injection. • Silicon photovoltaic cells with gold nano-islands imbedded in p–n junctions showed a dramatic increase in the cell efficiency. - Abstract: The main problems preventing wide spreading of solar cells as alternative energy sources are their high cost and low efficiency. Efficiency of solar cells based on semiconductor materials is limited due to high electrical and optical losses and due to recombination processes. Non-continuous, thin island gold films deposited on a dielectric or semiconductor surface introduce a unique behavior. In response to light exposure in certain range, the metal islands present a resonant absorption of light accompanied with a collective behavior of free electrons in these islands. In this paper we present one possible way to increase the efficiency of solar cells by using nano-dimensional gold islands imbedded in semiconductor junctions.

  20. Performance characterization of thin-film-silicon based solar modules under clouded and clear sky conditions in comparison to crystalline silicon modules

    Science.gov (United States)

    Weicht, J. A.; Rasch, R.; Behrens, G.; Hamelmann, F. U.

    2016-07-01

    For a precise prediction of the energy yield of amorphous ( a-Si) and amorphous-microcrystalline tandem ( a-Si/ μc-Si) thinfilm-silicon photovoltaic (PV) modules it is important to know their performance ratio under different light conditions. The efficiency of solar modules is an important value for the monitoring and planning of PV-systems. The efficiency of a-Si solar modules shows no significant changes in the performance ratio at clouded or clear sky conditions. The efficiency of crystalline silicon-based ( c-Si) and a-Si/ μc-Si solar modules shows a lower efficiency for fully clouded conditions without direct irradiation compared to conditions with direct irradiation (clear sky). [Figure not available: see fulltext.

  1. Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells

    International Nuclear Information System (INIS)

    To optimize the performance of microcrystalline silicon carbide (μc-SiC:H) window layers in n-i-p type microcrystalline silicon (μc-Si:H) solar cells, the influence of the rhenium filament temperature in the hot wire chemical vapor deposition process on the properties of μc-SiC:H films and corresponding solar cells were studied. The filament temperature TF has a strong effect on the structure and optical properties of μc-SiC:H films. Using these μc-SiC:H films prepared in the range of TF = 1800-2000 oC as window layers in n-side illuminated μc-Si:H solar cells, cell efficiencies of above 8.0% were achieved with 1 μm thick μc-Si:H absorber layer and Ag back reflector.

  2. Photon Management Structures for Absorption Enhancement in Intermediate Band Solar Cells and Crystalline Silicon Solar Cells

    OpenAIRE

    Mellor Null, Alexander Virgil

    2013-01-01

    El objetivo de la tesis es investigar los beneficios que el atrapamiento de la luz mediante fenómenos difractivos puede suponer para las células solares de silicio cristalino y las de banda intermedia. Ambos tipos de células adolecen de una insuficiente absorción de fotones en alguna región del espectro solar. Las células solares de banda intermedia son teóricamente capaces de alcanzar eficiencias mucho mayores que los dispositivos convencionales (con una sola banda energética prohibida), per...

  3. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W. [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul [National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-11-28

    Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  4. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    International Nuclear Information System (INIS)

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm−2 to 1 × 1016 cm−2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

  5. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  6. Organic-inorganic halide perovskite/crystalline silicon four-terminal tandem solar cells.

    Science.gov (United States)

    Löper, Philipp; Moon, Soo-Jin; de Nicolas, Sílvia Martín; Niesen, Bjoern; Ledinsky, Martin; Nicolay, Sylvain; Bailat, Julien; Yum, Jun-Ho; De Wolf, Stefaan; Ballif, Christophe

    2015-01-21

    Tandem solar cells constructed from a crystalline silicon (c-Si) bottom cell and a low-cost top cell offer a promising way to ensure long-term price reductions of photovoltaic modules. We present a four-terminal tandem solar cell consisting of a methyl ammonium lead triiodide (CH3NH3PbI3) top cell and a c-Si heterojunction bottom cell. The CH3NH3PbI3 top cell exhibits broad-band transparency owing to its design free of metallic components and yields a transmittance of >55% in the near-infrared spectral region. This allows the generation of a short-circuit current density of 13.7 mA cm(-2) in the bottom cell. The four-terminal tandem solar cell yields an efficiency of 13.4% (top cell: 6.2%, bottom cell: 7.2%), which is a gain of 1.8%abs with respect to the reference single-junction CH3NH3PbI3 solar cell with metal back contact. We employ the four-terminal tandem solar cell for a detailed investigation of the optical losses and to derive guidelines for further efficiency improvements. Based on a power loss analysis, we estimate that tandem efficiencies of ∼28% are attainable using an optically optimized system based on current technology, whereas a fully optimized, ultimate device with matched current could yield up to 31.6%.

  7. Matching of Silicon Thin-Film Tandem Solar Cells for Maximum Power Output

    Directory of Open Access Journals (Sweden)

    C. Ulbrich

    2013-01-01

    Full Text Available We present a meaningful characterization method for tandem solar cells. The experimental method allows for optimizing the output power instead of the current. Furthermore, it enables the extraction of the approximate AM1.5g efficiency when working with noncalibrated spectra. Current matching of tandem solar cells under short-circuit condition maximizes the output current but is disadvantageous for the overall fill factor and as a consequence does not imply an optimization of the output power of the device. We apply the matching condition to the maximum power output; that is, a stack of solar cells is power matched if the power output of each subcell is maximal at equal subcell currents. The new measurement procedure uses additional light-emitting diodes as bias light in the JV characterization of tandem solar cells. Using a characterized reference tandem solar cell, such as a hydrogenated amorphous/microcrystalline silicon tandem, it is possible to extract the AM1.5g efficiency from tandems of the same technology also under noncalibrated spectra.

  8. A hybrid solar cell fabricated using amorphous silicon and a fullerene derivative.

    Science.gov (United States)

    Yun, Myoung Hee; Jang, Ji Hoon; Kim, Kyung Min; Song, Hee-eun; Lee, Jeong Chul; Kim, Jin Young

    2013-12-01

    Hybrid solar cells, based on organic and inorganic semiconductors, are a promising way to enhance the efficiency of solar cells because they make better use of the solar spectrum and are straightforward to fabricate. We report on a new hybrid solar cell comprised of hydrogenated amorphous silicon (a-Si:H), [6,6]-phenyl-C71-butyric acid methyl ester ([71]PCBM), and poly-3,4-ethylenedioxythiophene poly styrenesulfonate (PEDOT:PSS). The properties of these PEDOT:PSS/a-Si:H/[71]PCBM devices were studied as a function of the thickness of the a-Si:H layer. It was observed that the open circuit voltage and the short circuit current density of the device depended on the thickness of the a-Si:H layer. Under simulated one sun AM 1.5 global illumination (100 mW cm(-2)), a power conversion efficiency of 2.84% was achieved in a device comprised of a 274 nm-thick layer of a-Si:H; this is the best performance achieved to date for a hybrid solar cell made of amorphous Si and organic materials. PMID:24149894

  9. Improvement of hydrogenated microcrystalline silicon solar cell performance by VHF power profiling technique

    Energy Technology Data Exchange (ETDEWEB)

    Han, Xiaoyan; Hou, Guofu; Zhang, Xiaodan; Wei, Changchun; Li, Guijun; Zhang, Jianjun; Chen, Xinliang; Zhang, Dekun; Sun, Jian; Zhao, Ying; Geng, Xinhua [Institute of Photo-electronics, Nankai University, Weijin Road 94, Tianjin 300071 (China)

    2010-02-15

    Hydrogenated microcrystalline silicon ({mu}c-Si:H) solar cells were deposited with very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) process at high deposition rates in high-power and a high-pressure regime. A novel VHF power profiling technique, designed by dynamically decreasing the VHF power step by step during the deposition of {mu}c-Si:H intrinsic layers, has been developed for the first time to control the structural evolution along the growth direction. The profiling parameters such as the amount and the rate of change in VHF power were optimized in detail and the experimental results demonstrate that this technique not only controls the microstructure evolution but also results in reduced ion bombardments on growth surface. Using this method, a significant improvement in the solar cell performance has been achieved. A high conversion efficiency of 9.36% (V{sub oc}=542 mV, J{sub sc}=25.4 mA/cm{sup 2}, FF=68%) was obtained for a single-junction {mu}c-Si:H p-i-n solar cell at a deposition rate of 12 Aa/s. Then, the single-junction solar cell was used as a bottom component in micromorph solar cell, which leads to an efficiency of 11.14% (V{sub oc}=1.367 V, J{sub sc}=11.92 mA/cm{sup 2}, FF=69.4%). (author)

  10. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures.

    Science.gov (United States)

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-08-14

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm(2) exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm(-2) because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells. PMID:27405387

  11. Structure and electrical properties of screen printed contacts on silicon solar cells

    Directory of Open Access Journals (Sweden)

    L.A. Dobrzański

    2011-04-01

    Full Text Available Purpose: The aim of the paper was to apply a conventional method - “screen printing” using micrometric pastes to improve the quality of forming front side metallization of monocrystalline solar cells.Design/methodology/approach: The topography of co-fired in the infrared belt furnace front contacts were investigated using confocal laser scanning microscope and scanning electron microscope with an energy dispersive X-ray (EDS spectrometer for microchemical analysis. There were researched both surface topography and cross section of front contacts using SEM microscope. Phase composition analyses of chosen front contacts were done using the XRD method. Front contacts were formed on the surface with different morphology of the solar cells: textured with coated antireflection layer, textured without coated antireflection layer, non-textured with coated antireflection layer, non-textured without coated antireflection layer. The medium size of the pyramids was measured using the atomic force microscope (AFM. Resistance of front electrodes was investigated using Transmission Line Model (TLM.Findings: The high of deposited front metallization has an influence on value obtained from the contact resistance. This high of silver contact depends on: a paste composition, obtained structure after fired into a infrared belt furnace, the quantity and type of creating connections material molecules between themselves and with a silicon substrate.Research limitations/implications: The contact resistance of the screen-printed front metallization depends not only on the paste composition and firing conditions, but is also strongly influenced by the surface morphology of the silicon substrate.Originality/value: This paper investigates the front contact formation using silver pastes about different composition on silicon solar cells in order to decrease contact resistance and increase efficiency in this way

  12. Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

    Directory of Open Access Journals (Sweden)

    Abolmasov Sergey

    2016-01-01

    Full Text Available We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H, a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μc-SiOx:H layers and a MgF2 ARC.

  13. Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

    Science.gov (United States)

    Abolmasov, Sergey; Cabarrocas, Pere Roca i.; Chatterjee, Parsathi

    2016-01-01

    We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μc-SiOx:H layers and a MgF2 ARC.

  14. The use of electro-deoxidation in molten salts to reduce the energy consumption of solar grade silicon and increase the output of PV solar cells

    Directory of Open Access Journals (Sweden)

    Paul R. Coxon

    2015-12-01

    Full Text Available Solar photovoltaics, based upon silicon, are the most popular form of solar cell with efficiencies around 20%. These efficiencies can be further increased by employing light trapping schemes to minimise optical losses through scattering and reflection which enhances the amount of light absorbed and number of photo-carriers generated. Typical approaches employ antireflection coatings (ARCs or texturise the surface of the silicon disks, so that the structure consists of an array of needles which can absorb most of the light. Usually, these structures are created by leaching the silicon with hydrofluoric-based acids or by reactive ion etching (RIE methods. This paper reviews some of the methods for improving the energy efficiency of silicon production, and describes the use of electro-deoxidation of SiO2 layers, on silicon, in molten calcium chloride to form nano-porous black silicon (b-Si structures. By coating b-Si surface with TiO2, a common ARC, extremely black surfaces with negligible reflectance of about 0.1%, are produced, which can have applications for low-cost high efficiency solar cells.

  15. Solar LBIC scanning of high-efficiency point-contact silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vorster, F.J.; Dyk, E.E. van [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University (NMMU), Port Elizabeth (South Africa)

    2008-07-01

    The induced current response from a High Efficiency Concentrator (HECO) monocrystaline Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. Recombination accounts for a major portion of the reduction in quantum efficiency in these cells. This paper examines the spatial distribution of defect mechanisms causing a reduction of collected photocurrent of the backside point-contact device structure while under spot illumination. By examining the bias dependence of the S-LBIC maps, the identification of current loss mechanisms of solar cells under concentrated solar irradiance may be improved. The techniques employed to interpret the spatially distributed I-V curves are discussed and results presented. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Texturing of the Silicon Substrate with Nanopores and Si Nanowires for Anti-reflecting Surfaces of Solar Cells

    Directory of Open Access Journals (Sweden)

    A.A. Druzhinin

    2015-06-01

    Full Text Available The paper presents the prospects of obtaining a functional multi-layer anti-reflecting coating of the front surface of solar cells by texturing the surface of the silicon by electrochemical etching. The physical model of the "Black Si" coating with discrete inhomogeneity of the refractive index and technological aspects of producing of "Black Si" functional anti-reflecting coatings were presented. The investigation results of the spectral characteristics of the obtained multilayer multiporous "Black Si" coatings for silicon solar cells made by electrochemical etching are presented. The possibility of creating the texture on a silicon wafer surface using silicon nanowires and ordered nanopores obtained by metal-assisted chemical etching was shown.

  17. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  18. Interactions of efficiency and material requirements for terrestrial silicon solar cells

    Science.gov (United States)

    Bowler, D. L.; Wolf, M.

    1980-01-01

    The transport velocity transformation method was used to analyze solar cell designs to determine optimum cell structures. It was found that low resistivity materials should be used up to the onset of Auger recombination; a properly designed three-layer structure permits base region approaching an ideal device in performance; and that higher resistivity front regions will need more sophisticated grid metallization structures than those used now. It was concluded that new features will provide idealized silicon cell structures yielding airmass 1 efficiencies in the 24-26.5% range, with real efficiencies near 22%.

  19. Plasma texturing on large-area industrial grade CZ silicon solar cells

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Nordseth, Ørnulf; Boisen, Anja;

    2013-01-01

    , and thus holds a significant potential for improvement of the cell performance compared to current industrial standards. The reflectance is shown to remain below that of conventional textured cells also at high angle of incidence. The process is shown to be equally applicable to mono-, multi- and...... quasi-mono-crystalline Si. The process was successfully integrated in fabrication of solar cells using only industry standard processes on a Czochralski (CZ) silicon starting material. The resulting cell performance was compared to cells with conventional texturing. For cells, where the nanostructuring...

  20. Unlinking absorption and haze in thin film silicon solar cells front electrodes

    OpenAIRE

    Boccard, Mathieu; Cuony, Peter; Battaglia, Corsin; Despeisse, Matthieu; Ballif, Christophe

    2010-01-01

    We study the respective influence of haze and free carrier absorption (FCA) of transparent front electrodes on the photogenerated current of micromorph thin film silicon solar cells. To decouple the haze and FCA we develop bi-layer front electrodes: a flat indium tin oxide layer assures conduction and allows us to tune FCA while the haze is adjusted by varying the thickness of a highly transparent rough ZnO layer. We show how a minimum amount of FCA leads only to a few percents absorption for...

  1. The effects of enhanced light trapping in tandem micromorph silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Krc, J.; Brecl, K.; Smole, F.; Topic, M. [Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, SI-1000 Ljubljana (Slovenia)

    2006-11-23

    Optical modelling is used to investigate the potential improvements in quantum efficiency and short-circuit current density of the top and bottom silicon cell in tandem micromorph configuration. The effects of enhanced haze parameter and different angular distribution functions of scattered light are presented and analysed. The role of an intermediate reflector (interlayer), located between the top and bottom cell, is studied from the optical point of view. The improvements in quantum efficiency of top cell are demonstrated for different types of interlayers. Potential thickness reductions due to enhanced light trapping in the solar cells are presented. (author)

  2. On the performance limiting behavior of defect clusters in commercial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Chen, W.; Jones, K. [National Renewable Energy Lab., Golden, CO (United States); Gee, J. [Sandia National Labs., Albuquerque, NM (United States)

    1998-09-01

    The authors report the observation of defect clusters in high-quality, commercial silicon solar cell substrates. The nature of the defect clusters, their mechanism of formation, and precipitation of metallic impurities at the defect clusters are discussed. This defect configuration influences the device performance in a unique way--by primarily degrading the voltage-related parameters. Network modeling is used to show that, in an N/P junction device, these regions act as shunts that dissipate power generated within the cell.

  3. Silicon Light: a European FP7 project aiming at high efficiency thin film silicon solar cells on foil. Monolithic series interconnection of flexible thin-film PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Haug, F.J. [Ecole Polytechnique Federale de Lausanne EPFL, Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland); Couty, P. [VHFTechnologies SA, Rue Edouard-Verdan 2, CH-1400 Yverdon-les-Bains (Switzerland); Duchamp, M. [Technical University of Denmark, Center for Electron Nanoscopy, DK-2800 Kongens Lyngby (Denmark); Schipper, W. [Nanoptics GmbH, Innungstr.5, 21244 Buchholz (Germany); Krc, J. [University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25, SI-1000 Ljubljana (Slovenia); Sanchez, G. [Universidad Politecnica de Valencia, I.U.I. Centro de Tecnologia Nanofotonica, 46022 Valencia (Spain); Leitner, K. [Umicore Thin Film Products AG, Balzers (Liechtenstein); Wang, Q. [Shanghai Jiaotong University, Research Institute of Micro/Nanometer Science and Technology, 800 Dongchuan Road, Min Hang, 200240 Shanghai (China)

    2011-09-15

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: (a) advanced light trapping by implementing nanotexturization through UV Nano Imprinting Lithography (UV-NIL); (b) growth of crack-free silicon absorber layers on highly textured substrates; (c) development of new TCOs which should combine the best properties of presently available materials like ITO and AZO. The paper presents the midterm status of the project results, showing model calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8% have been made, paving the way towards a-Si/{mu}c-Si tandem cells with more than 11% efficiency.

  4. A miniature solar device for overall water splitting consisting of series-connected spherical silicon solar cells

    KAUST Repository

    Kageshima, Yosuke

    2016-04-18

    A novel “photovoltaics (PV) + electrolyzer” concept is presented using a simple, small, and completely stand-alone non-biased device for solar-driven overall water splitting. Three or four spherical-shaped p-n junction silicon balls were successfully connected in series, named “SPHELAR.” SPHELAR possessed small projected areas of 0.20 (3PVs) and 0.26 cm2 (4PVs) and exhibited working voltages sufficient for water electrolysis. Impacts of the configuration on the PV module performance were carefully analyzed, revealing that a drastic increase in the photocurrent (≈20%) was attained by the effective utilization of a reflective sheet. Separate investigations on the electrocatalyst performance showed that non-noble metal based materials with reasonably small sizes (<0.80 cm2) exhibited substantial currents at the PV working voltage. By combining the observations of the PV characteristics, light management and electrocatalyst performance, solar-driven overall water splitting was readily achieved, reaching solar-to-hydrogen efficiencies of 7.4% (3PVs) and 6.4% (4PVs).

  5. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels. PMID:27598429

  6. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

  7. Light-scattering effectiveness of two-dimensional disordered surface textures in thin-film silicon solar cells.

    Science.gov (United States)

    Yeh, Pinghui S; Chen, Chien-Wei; Yang, Bing-Ru; Hong, Lu-Sheng

    2014-05-01

    To compare the light-scattering effectiveness of surface-textured solar cells of various design parameters such as density, diameter, refractive index, and location, this study used a new parameter, optical path length gain (OPLG), that is more sensitive than Haze. By modeling two-dimensional disordered textures as a structure that comprises many randomly distributed, small, spherical scatterers, ray-tracing simulations of surface-textured thin-film silicon solar cells were performed. The simulation results suggest that: (1) the optimal scatterer diameter for hydrogenated amorphous silicon (a-Si:H) solar cells is ~50 nm, producing an average OPLG of 3.5; and (2) the optimal scatterer diameter for a-Si:H/μc-Si:H (hydrogenated microcrystalline silicon) tandem cells is ~75 nm, producing an average OPLG of 3.4 and an increase in the bandwidth of the absorption spectrum of 14.5%. PMID:24921870

  8. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  9. Summary of the 4th Workshop on Metallization for Crystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Beaucarne, G. [Dow Corning, Parc Industriel, Zone C, Rue Jules Bordet, 7180 Seneffe (Belgium); Schubert, G. [Sunways AG, Macairestrasse 3 - 5, D - 78467 Konstanz (Germany); Hoornstra, J. [Energy research Centre of the Netherlands ECN, POBox 1, 1755 ZG Petten (Netherlands)

    2013-07-01

    The 4th Metallization Workshop held in May 2013 in Constance, Germany, enabled experts in metallization for crystalline silicon solar cells to obtain a clear view on the status of the technology, as well as to exchange and generate new ideas and insights. From the contributions on the workshop, it was clear that the traditional metallization technique of screenprinting Ag paste has been improved in a dramatic way over the last two years, accelerating the decrease of Ag consumption per cell while improving solar cell efficiency. This was achieved through enhanced understanding of screenprinted contacts, improving Ag pastes and evolutionary modifications to the screenprinting technique. Alternatives to screenprinting, including electroplating of Ni and Cu contacts, also continue to progress, though not quite at the same impressive rate of improvement as Ag printing.

  10. Uncertainties about the physical electronics of n(+) and p(+) silicon, with applications for solar cells

    Science.gov (United States)

    Lindholm, F. A.

    1984-01-01

    After brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.

  11. Microcrystalline-Silicon-Oxide-Based N-Type Reflector Structure in Micromorph Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Chiung-Nan Li

    2012-01-01

    Full Text Available N-type microcrystalline silicon oxide thin films (n-c-SiO:H have been deposited by VHF-PECVD (40 MHz with reactant gas mixtures of CO2/SiH4 and H2. N-c-SiO thin films exhibiting low refractive index value (n600nm∼2, and medium/high conductivity (≧10−9 S/cm are suitable to be used as an “n-type reflector” in micromorph tandem solar cells. Transmission electron microscopy (TEM results show that microstructures of n-c-SiO:H thin films contain nanocrystalline Si particles, which are randomly embedded in the a-SiO matrix. This specific microstructure provides n-c-SiO:H thin films excellent optoelectronic properties; therefore, n-c-SiO:H thin films are appropriate candidates for “n-type reflector” structures in Si tandem solar cells.

  12. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-06-21

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  13. Preparation of silver-coated glass frit and its application in silicon solar cells

    Science.gov (United States)

    Feng, Xiang; Biyuan, Li; Yingfen, Li; Jian, Zhou; Weiping, Gan

    2016-07-01

    A simple electroless plating process was employed to prepare silver-coated glass frits for solar cells. The surface of the glass frits was modified with polyvinyl-pyrrolidone (PVP) before the electroless plating process. Infrared (IR) spectroscopy, field emission scanning electron microscopy (FESEM), and x-ray diffraction (XRD) were used to characterize the PVP modified glass frits and investigate the mechanism of the modification process. It was found that the PVP molecules adsorbed on the glass frit surface and reduced the silver ions to the silver nanoparticles. Through epitaxial growth, these nanoparticles were uniformly deposited onto the surface of the glass frit. Silicon solar cells with this novel silver coating exhibited a photoelectric conversion efficiency increase of 0.33%. Compared with the electroless plating processes, this method provides a simple route to prepare silver-coated glass frits without introducing impurity ions.

  14. Preparation of silver-coated glass frit and its application in silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    向锋; 李碧渊; 黎应芬; 周健; 甘卫平

    2016-01-01

    A simple electroless plating process was employed to prepare silver-coated glass frits for solar cells. The surface of the glass frits was modified with polyvinyl-pyrrolidone (PVP) before the electroless plating process. Infrared (IR) spectroscopy, field emission scanning electron microscopy (FESEM), and x-ray diffraction (XRD) were used to characterize the PVP modified glass frits and investigate the mechanism of the modification process. It was found that the PVP molecules adsorbed on the glass frit surface and reduced the silver ions to the silver nanoparticles. Through epitaxial growth, these nanoparticles were uniformly deposited onto the surface of the glass frit. Silicon solar cells with this novel silver coating exhibited a photoelectric conversion efficiency increase of 0.33%. Compared with the electroless plating processes, this method provides a simple route to prepare silver-coated glass frits without introducing impurity ions.

  15. Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Haug, F.-J.; Niquille, X.; Terrazzoni, V.; Ballif, C.

    2009-02-01

    The micromorph solar cell (stack of amorphous and microcrystalline cells) concept is the key for achieving high efficiency stabilized thin film silicon solar cells. We introduce a device structure that allows a better control of the light in-coupling into the two subcell components. It is based on an asymmetric intermediate reflector, which increases the effective thickness of the a-Si:H by a factor of more than three. Hence, the a-Si:H thickness reduction diminishes the light induced degradation, and micromorph tandem cells with 11.2% initial and 9.8% stabilized efficiencies (1000 h, 50 °C, and 100 mW/cm2) are made on plastic substrates with Tg<180 °C.

  16. The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

    Science.gov (United States)

    Ghosh, S.; Sargent, G. A.

    1972-01-01

    Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

  17. Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Escarre, J.; Villar, F.; Asensi, J.M.; Bertomeu, J.; Andreu, J. [CeRMAE - Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

    2006-06-15

    Nowadays, one of the most important challenges to enhance the efficiency of thin film silicon solar cells is to increase the short circuit intensity by means of optical confinement methods, such as textured back-reflector structures. In this work, two possible textured structures to be used as back reflectors for n-i-p solar cells have been optically analyzed and compared to a smooth one by using a system which is able to measure the angular distribution function (ADF) of the scattered light in a wide spectral range (350-1000nm). The accurate analysis of the ADF data corresponding to the reflector structures and to the {mu}c-Si:H films deposited onto them allows the optical losses due to the reflector absorption and its effectiveness in increasing light absorption in the {mu}c-Si:H layer, mainly at long wavelengths, to be quantified. (author)

  18. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  19. Analysis on anomalous degradation in silicon solar cell designed for space use

    Energy Technology Data Exchange (ETDEWEB)

    Ohshima, Takeshi; Morita, Yousuke; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Kawasaki, Osamu; Hisamatsu, Tadashi; Yamamoto, Yasunari; Matsuda, Sumio; Nakao, Tetsuya; Wakow, Yoshihito

    1997-03-01

    Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)

  20. Progress of Silicon Solar Cell%硅半导体太阳能电池进展

    Institute of Scientific and Technical Information of China (English)

    李怀辉; 王小平; 王丽军; 刘欣欣; 梅翠玉; 刘仁杰; 江振兴; 赵凯麟

    2011-01-01

    The solar cell is a device converting solar energy directly into electrical energy, also is an effective way to use solar energy. As a kind of green energy, especially in nuclear security problems facing challenges today, solar cells are thought to be the best choice to solve the energy failure and environmental pollution and so oa At present, many countries are drafting long-term solar development plan,and prepare to develop large-scale solar energy in the 21st century. Silicon solar cells (such as monocrystalline silicon, polycrystalline silicon, amorphous silicon, etc. ) are widely used. Through comparing and discussing all kinds of silicon solar battery performance, technology, the efficiency of conversion from aspects and preparation methods and their properties of the advantages and disadvantages, various silicon solar cell research present situation and the latest progress are reviewed. Finally, the silicon solar battery research and production prospects and trends are discussed.%太阳能电池是将太阳能直接转化为电能的装置,也是有效利用太阳能最佳途径之一.作为一种绿色能源,尤其是在核电安全问题面临挑战的今天,太阳能电池被认为是解决能源衰竭和环境污染等一系列重大问题的最佳选择.目前,许多国家正在制订中长期太阳能开发计划,准备在21世纪大规模开发太阳能.当前研究最多同时在生产应用的最广泛的当数硅太阳能电池(如单晶硅、多晶硅、非晶硅等).通过对各类硅太阳能电池的性能、工艺、转化效率以及制备方法等方面作比较并讨论了它们各自性能的优劣,最后结合当前国内外工业化生产状况,对硅太阳能电池研究现状和各自的最新进展作了比较详细的综述,并简要讨论了硅太阳能电池研究和生产上的前景及趋势.