WorldWideScience

Sample records for beam-induced voltage simulation

  1. Modeling and simulation of beam induced backgrounds measured by ATLAS Forward Proton (AFP) detector

    CERN Document Server

    Huang, Yicong

    The ATLAS Forward Proton (AFP) detector is a forward detector of the ATLAS experiment at CERN. Its main goal is to trigger diffractive protons in collisions at the Large Hadron Collider (LHC). To achieve this, the detector has to be placed very close to the beam. Inevitable consequence is that its measurements can be easily affected by the beam induced background. This thesis presents a study of the beam induced background in the AFP detector and discuss methods for its removal. The Geant4 simulations and data, including non-colliding bunches are used to identify characteristic features of beam induced backgrounds. A method using combination of signals detected by the AFP detector and the Minimum Bias Trigger Scintillators (MBTS) is used to selected single diffractive event namely on low pile-up data taken during the first AFP physics run in 2016. Finally, an estimate of the beam induced backgrounds level in data together with a study of the radiation environment at the AFP stations was made, comparing result...

  2. Simulation of beam-induced plasma for the mitigation of beam-beam effects

    Energy Technology Data Exchange (ETDEWEB)

    Ma, J.; Wang, G.; Samulyak, R.; Yu, K.; Litvinenko, V.

    2015-05-03

    One of the main challenges in the increase of luminosity of circular colliders is the control of the beam-beam effect. In the process of exploring beam-beam mitigation methods using plasma, we evaluated the possibility of plasma generation via ionization of neutral gas by proton beams, and performed highly resolved simulations of the beam-plasma interaction using SPACE, a 3D electromagnetic particle-in-cell code. The process of plasma generation is modelled using experimentally measured cross-section coefficients and a plasma recombination model that takes into account the presence of neutral gas and beam-induced electromagnetic fields. Numerically simulated plasma oscillations are consistent with theoretical analysis. In the beam-plasma interaction process, high-density neutral gas reduces the mean free path of plasma electrons and their acceleration. A numerical model for the drift speed as a limit of plasma electron velocity was developed. Simulations demonstrate a significant reduction of the beam electric field in the presence of plasma. Preliminary simulations using fully-ionized plasma have also been performed and compared with the case of beam-induced plasma.

  3. A Novel Contactless Method for Characterization of Semiconductors: Surface Electron Beam Induced Voltage in Scanning Electron Microscopy

    Institute of Scientific and Technical Information of China (English)

    朱世秋; E.I.RAU; 杨富华; 郑厚植

    2002-01-01

    We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices. The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM). The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface. The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64pf. It is large enough for the detection of the induced surface potential. The irradiation mode of electron beam (e-beam) influences the signal generation. When the e-beam irradiates on the surface of semiconductors continuously, a differential signal is obtained. The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection. The polarity of induced potential depends on the structure of potential barriers and surface states of samples. The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.

  4. A comparison of neon versus helium ion beam induced deposition via Monte Carlo simulations.

    Science.gov (United States)

    Timilsina, Rajendra; Smith, Daryl A; Rack, Philip D

    2013-03-22

    The ion beam induced nanoscale synthesis of PtCx (where x ∼ 5) using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated by performing Monte Carlo simulations of helium and neon ions. The helium beam leads to more lateral growth relative to the neon beam because of its larger interaction volume. The lateral growth of the nanopillars is dominated by molecules deposited via secondary electrons in both the simulations. Notably, the helium pillars are dominated by SE-I electrons whereas the neon pillars are dominated by SE-II electrons. Using a low precursor residence time of 70 μs, resulting in an equilibrium coverage of ∼4%, the neon simulation has a lower deposition efficiency (3.5%) compared to that of the helium simulation (6.5%). At larger residence time (10 ms) and consequently larger equilibrium coverage (85%) the deposition efficiencies of helium and neon increased to 49% and 21%, respectively; which is dominated by increased lateral growth rates leading to broader pillars. The nanoscale growth is further studied by varying the ion beam diameter at 10 ms precursor residence time. The study shows that total SE yield decreases with increasing beam diameters for both the ion types. However, helium has the larger SE yield as compared to that of neon in both the low and high precursor residence time, and thus pillars are wider in all the simulations studied.

  5. Simulation of beam-induced plasma in gas-filled rf cavities

    Science.gov (United States)

    Yu, Kwangmin; Samulyak, Roman; Yonehara, Katsuya; Freemire, Ben

    2017-03-01

    Processes occurring in a radio-frequency (rf) cavity, filled with high pressure gas and interacting with proton beams, have been studied via advanced numerical simulations. Simulations support the experimental program on the hydrogen gas-filled rf cavity in the Mucool Test Area (MTA) at Fermilab, and broader research on the design of muon cooling devices. space, a 3D electromagnetic particle-in-cell (EM-PIC) code with atomic physics support, was used in simulation studies. Plasma dynamics in the rf cavity, including the process of neutral gas ionization by proton beams, plasma loading of the rf cavity, and atomic processes in plasma such as electron-ion and ion-ion recombination and electron attachment to dopant molecules, have been studied. Through comparison with experiments in the MTA, simulations quantified several uncertain values of plasma properties such as effective recombination rates and the attachment time of electrons to dopant molecules. Simulations have achieved very good agreement with experiments on plasma loading and related processes. The experimentally validated code space is capable of predictive simulations of muon cooling devices.

  6. Simulation of ion beam induced current in radiation detectors and microelectronic devices.

    Energy Technology Data Exchange (ETDEWEB)

    Vizkelethy, Gyorgy

    2009-10-01

    Ionizing radiation is known to cause Single Event Effects (SEE) in a variety of electronic devices. The mechanism that leads to these SEEs is current induced by the radiation in these devices. While this phenomenon is detrimental in ICs, this is the basic mechanism behind the operation of semiconductor radiation detectors. To be able to predict SEEs in ICs and detector responses we need to be able to simulate the radiation induced current as the function of time. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. On the other end, TCAD programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. A simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework.

  7. Modeling and Simulation of Low Voltage Arcs

    NARCIS (Netherlands)

    Ghezzi, L.; Balestrero, A.

    2010-01-01

    Modeling and Simulation of Low Voltage Arcs is an attempt to improve the physical understanding, mathematical modeling and numerical simulation of the electric arcs that are found during current interruptions in low voltage circuit breakers. An empirical description is gained by refined electrical

  8. Modeling and Simulation of Low Voltage Arcs

    NARCIS (Netherlands)

    Ghezzi, L.; Balestrero, A.

    2010-01-01

    Modeling and Simulation of Low Voltage Arcs is an attempt to improve the physical understanding, mathematical modeling and numerical simulation of the electric arcs that are found during current interruptions in low voltage circuit breakers. An empirical description is gained by refined electrical m

  9. Zakharov simulations of beam-induced turbulence in the auroral ionosphere

    Science.gov (United States)

    Akbari, H.; Guio, P.; Hirsch, M. A.; Semeter, J. L.

    2016-05-01

    Recent detections of strong incoherent scatter radar echoes from the auroral F region, which have been explained as the signature of naturally produced Langmuir turbulence, have motivated us to revisit the topic of beam-generated Langmuir turbulence via simulation. Results from one-dimensional Zakharov simulations are used to study the interaction of ionospheric electron beams with the background plasma at the F region peak. A broad range of beam parameters extending by more than 2 orders of magnitude in average energy and electron number density is considered. A range of wave interaction processes, from a single parametric decay, to a cascade of parametric decays, to formation of stationary density cavities in the condensate region, and to direct collapse at the initial stages of turbulence, is observed as we increase the input energy to the system. The effect of suprathermal electrons, produced by collisional interactions of auroral electrons with the neutral atmosphere, on the dynamics of Langmuir turbulence is also investigated. It is seen that the enhanced Landau damping introduced by the suprathermal electrons significantly weakens the turbulence and truncates the cascade of parametric decays.

  10. SIMULATION OF INTERLINE DYNAMIC VOLTAGE RESTORER

    Directory of Open Access Journals (Sweden)

    J.Singaravelan

    2011-08-01

    Full Text Available This paper presents a new approach for the dynamic control of a current source inverter (CSI using Super Conductive Magnetic energy storage (SMES based Interline DVR. The dynamic voltage restorer (DVR provides a technically advanced and economical solution to voltage-sag problem. As the voltage-restoration process involves the real-power injection into the distribution system, the capability ofa DVR, especially for compensating long-duration voltage sags, it depends on the energy storage capacity of the DVR. The interline DVR proposed in this paper provides a way to replenish Dc-link energy storage dynamically. The IDVR consists of several DVRs connected to different distribution feeders in the power system. The DVRs in the IDVR system shares the common energy storage. When one of the DVRcompensates for voltage sag appearing in that feeder, the other DVRs replenish the energy in the common dc-link dynamically. Thus, one DVR in the IDVR system works in voltage-sag compensation mode whilethe other DVRs in the IDVR system operate in power-flow control mode. The proposed topology is simulated using Matlab/Simulink and total IDVR system is simulated using Matlab/Simulink.

  11. Charge carrier transport in Cu(In,Ga)Se{sub 2} thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    Energy Technology Data Exchange (ETDEWEB)

    Nichterwitz, Melanie

    2012-01-10

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se{sub 2} (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe{sub 2} absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p{sup +} layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p{sup +} layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface

  12. Simulation Research of Transient Over-voltage on High-voltage Shunt Capacitor Banks

    Institute of Scientific and Technical Information of China (English)

    HU Quan-wei; ZHOU Xing-xing; SI Wen-rong; ZHANG Yang; LI Jur-hao; LI Yan-ming

    2011-01-01

    With the development of power systems,a large number of shunt capacitors are used to improve power quality in the distribution network.The shunt capacitor banks are operated much frequently,as a result,the capacitor banks will bear large numbers of over-voltage inevitably.If the over-voltage exceeds certain amplitude,the capacitor will be damaged.This paper aims at the capacitor banks in the 35 kV side of Shanghai Xu-xing 500 kV substation,and applies ATP-EMTP to simulate the over-voltages generated by operating the switches under different angles of the source.Finally,according to the results of simulation and theoretical analysis,a best choice (i.e.angles of the source) to switch on capacitor banks is proposed.In this case the over-voltage on the capacitor will be limited to lowest.

  13. Simulating the Activation of Voltage Sensing Domain for a Voltage-Gated Sodium Channel Using Polarizable Force Field.

    Science.gov (United States)

    Sun, Rui-Ning; Gong, Haipeng

    2017-03-02

    Voltage-gated sodium (NaV) channels play vital roles in the signal transduction of excitable cells. Upon activation of a NaV channel, the change of transmembrane voltage triggers conformational change of the voltage sensing domain, which then elicits opening of the pore domain and thus allows an influx of Na(+) ions. Description of this process with atomistic details is in urgent demand. In this work, we simulated the partial activation process of the voltage sensing domain of a prokaryotic NaV channel using a polarizable force field. We not only observed the conformational change of the voltage sensing domain from resting to preactive state, but also rigorously estimated the free energy profile along the identified reaction pathway. Comparison with the control simulation using an additive force field indicates that voltage-gating thermodynamics of NaV channels may be inaccurately described without considering the electrostatic polarization effect.

  14. Voltage equilibration for reactive atomistic simulations of electrochemical processes

    Energy Technology Data Exchange (ETDEWEB)

    Onofrio, Nicolas; Strachan, Alejandro, E-mail: strachan@purdue.edu [School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States)

    2015-08-07

    We introduce electrochemical dynamics with implicit degrees of freedom (EChemDID), a model to describe electrochemical driving force in reactive molecular dynamics simulations. The method describes the equilibration of external electrochemical potentials (voltage) within metallic structures and their effect on the self-consistent partial atomic charges used in reactive molecular dynamics. An additional variable assigned to each atom denotes the local potential in its vicinity and we use fictitious, but computationally convenient, dynamics to describe its equilibration within connected metallic structures on-the-fly during the molecular dynamics simulation. This local electrostatic potential is used to dynamically modify the atomic electronegativities used to compute partial atomic changes via charge equilibration. Validation tests show that the method provides an accurate description of the electric fields generated by the applied voltage and the driving force for electrochemical reactions. We demonstrate EChemDID via simulations of the operation of electrochemical metallization cells. The simulations predict the switching of the device between a high-resistance to a low-resistance state as a conductive metallic bridge is formed and resistive currents that can be compared with experimental measurements. In addition to applications in nanoelectronics, EChemDID could be useful to model electrochemical energy conversion devices.

  15. Technology basis and perspectives on focused electron beam induced deposition and focused ion beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rius, Gemma, E-mail: rius.gemma@nitech.ac.jp

    2014-12-15

    The main characteristics of focused electron beam induced deposition (FEBID) and focused ion beam induced deposition (FIBID) are presented. FEBID and FIBID are two nanopatterning techniques that allow the fabrication of submicron patterns with nanometer resolution on selected locations of any kind of substrate, even on highly structured supports. The process consists of mask less serial deposition and can be applied to a wide variety of materials, depending strictly on the precursor material source used. The basic mechanism of FEBID and FIBID is the adsorption of volatile precursor molecules onto the sample surface and decomposition of the molecules induced by the energetic electron and ion focused beams. The essential similarities of the two techniques are presented and especial emphasis is dedicated to highlighting their main differences, such as aspects related to resolution, deposition rate, deposits purity, substrate integrity, etc. In both cases, the factors interplay and complex mechanisms are still understood in a qualitative basis, so much work can still be done in terms of modeling and simulating the processes involved in FEBID and FIBID. Current work on FEBID and FIBID is presented through examples of achievements, interesting results and novel approaches.

  16. Focused helium-ion-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Alkemade, P.F.A.; Miro, H. [Delft University of Technology, Kavli Institute of Nanoscience, Delft (Netherlands)

    2014-12-15

    The recent introduction of the helium ion microscope (HIM) offers new possibilities for materials modification and fabrication with spatial resolution below 10 nm. In particular, the specific interaction of He{sup +} ions in the tens of keV energy range with materials - i.e., minimal deflection and mainly energy loss via electronic excitations - renders the HIM a special tool for ion-beam-induced deposition. In this work, an overview is given of all studies of helium-ion-beam-induced deposition (He-IBID) that appeared in the literature before summer 2014. Continuum models that describe the deposition processes are presented in detail, with emphasis on precursor depletion and replenishment. In addition, a Monte Carlo model is discussed. Basic experimental He-IBID studies are critically examined. They show deposition rates of up to 0.1 nm{sup 3}/ion. Analysis by means of a continuum model yields the precursor diffusion constant and the cross sections for beam-induced precursor decomposition and beam-induced desorption. Moreover, it is shown that deposition takes place only in a small zone around the beam impact point. Furthermore, the characterization of deposited materials is discussed in terms of microstructure and resistivity. It is shown that He-IBID material resembles more electron-beam-induced-deposition (EBID) material than Ga-ion-beam-induced-deposition (Ga-IBID) material. Nevertheless, the spatial resolution for He-IBID is in general better than for EBID and Ga-IBID; in particular, proximity effects are minimal. (orig.)

  17. Simulation Test System of Non-Contact D-dot Voltage Transformer

    Science.gov (United States)

    Yang, Jie; Wang, Jingang; Luo, Ruixi; Gao, Can; Songnong, Li; Kongjun, Zhou

    2016-04-01

    The development trend of future voltage transformer in smart grid is non-contact measurement, miniaturization and intellectualization. This paper proposes one simulation test system of non-contact D-dot transformer for voltage measurement. This simulation test system consists of D-dot transformer, signal processing circuit and ground PC port. D-dot transformer realizes the indirect voltage measurement by measuring the change rate of electric displacement vector, a non-contact means (He et al. 2004, Principles and experiments of voltage transformer based on self-integrating D-dot probe. Proc CSEE 2014;15:2445-51). Specific to the characteristics of D-dot transformer signals, signal processing circuits with strong resistance to interference and distortion-free amplified sensor output signal are designed. WIFI wireless network is used to transmit the voltage detection to LabVIEW-based ground collection port and LabVIEW technology is adopted for signal reception, data processing and analysis and other functions. Finally, a test platform is established to simulate the performance of the whole test system of single-phase voltage transformer. Test results indicate that this voltage transformer has sound real-time performance, high accuracy and fast response speed and the simulation test system is stable and reliable and can be a new prototype of voltage transformers.

  18. Design and Simulation of a Low Actuation Voltage Capacitive Micro Electro Mechanical Systems’ (MEMS Switch

    Directory of Open Access Journals (Sweden)

    Ayub Soltani

    2014-09-01

    Full Text Available In this paper we have proposed a new switch or structure for reducing actuation voltage. This switch is compared with four conventional structures considering the force range of 1uN to 3uN. We have used the ANSYS software for design and simulation for the switch parameters such as actuation voltage, collapse voltage, spring constant and resonant frequency. Small size (half of the size of other proposed materials, which can reduce the manufacturing cost, and also low-valued spring constant, which results in actuation voltage reduction, are among more noticeable features of the proposed switch.

  19. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye

    2012-01-01

    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  20. Modeling and Simulation of the Single Phase Voltage Source UPS Inverter With Fourth Order Output Filter

    Directory of Open Access Journals (Sweden)

    Javad Faiz

    2011-01-01

    Full Text Available A UPS inverter operates in wide load impedance ranges from resistive to capacitive or inductive load. At the same time, fast transient load response, good load regulation and good switching frequency suppression is required. The variation of the load impedance changes the filter transfer characteristic and thus the output voltage value. In this paper, an analysis and simulation of the single phase voltage source uninterruptible power supply (UPS with fourth order filter (multiple-filter in output inverter, based on the state space averaging and small signal linearization technique, is proposed. The simulation results show the high quality sinusoidal output voltage at different loads, with THD less than %5.

  1. Testing beam-induced quench levels of LHC superconducting magnets

    Science.gov (United States)

    Auchmann, B.; Baer, T.; Bednarek, M.; Bellodi, G.; Bracco, C.; Bruce, R.; Cerutti, F.; Chetvertkova, V.; Dehning, B.; Granieri, P. P.; Hofle, W.; Holzer, E. B.; Lechner, A.; Nebot Del Busto, E.; Priebe, A.; Redaelli, S.; Salvachua, B.; Sapinski, M.; Schmidt, R.; Shetty, N.; Skordis, E.; Solfaroli, M.; Steckert, J.; Valuch, D.; Verweij, A.; Wenninger, J.; Wollmann, D.; Zerlauth, M.

    2015-06-01

    In the years 2009-2013 the Large Hadron Collider (LHC) has been operated with the top beam energies of 3.5 and 4 TeV per proton (from 2012) instead of the nominal 7 TeV. The currents in the superconducting magnets were reduced accordingly. To date only seventeen beam-induced quenches have occurred; eight of them during specially designed quench tests, the others during injection. There has not been a single beam-induced quench during normal collider operation with stored beam. The conditions, however, are expected to become much more challenging after the long LHC shutdown. The magnets will be operating at near nominal currents, and in the presence of high energy and high intensity beams with a stored energy of up to 362 MJ per beam. In this paper we summarize our efforts to understand the quench levels of LHC superconducting magnets. We describe beam-loss events and dedicated experiments with beam, as well as the simulation methods used to reproduce the observable signals. The simulated energy deposition in the coils is compared to the quench levels predicted by electrothermal models, thus allowing one to validate and improve the models which are used to set beam-dump thresholds on beam-loss monitors for run 2.

  2. Testing beam-induced quench levels of LHC superconducting magnets

    CERN Document Server

    Auchmann, B; Bednarek, M; Bellodi, G; Bracco, C; Bruce, R; Cerutti, F; Chetvertkova, V; Dehning, B; Granieri, P P; Hofle, W; Holzer, E B; Lechner, A; Del Busto, E Nebot; Priebe, A; Redaelli, S; Salvachua, B; Sapinski, M; Schmidt, R; Shetty, N; Skordis, E; Solfaroli, M; Steckert, J; Valuch, D; Verweij, A; Wenninger, J; Wollmann, D; Zerlauth, M

    2015-01-01

    In the years 2009-2013 the Large Hadron Collider (LHC) has been operated with the top beam energies of 3.5 TeV and 4 TeV per proton (from 2012) instead of the nominal 7 TeV. The currents in the superconducting magnets were reduced accordingly. To date only seventeen beam-induced quenches have occurred; eight of them during specially designed quench tests, the others during injection. There has not been a single beam- induced quench during normal collider operation with stored beam. The conditions, however, are expected to become much more challenging after the long LHC shutdown. The magnets will be operating at near nominal currents, and in the presence of high energy and high intensity beams with a stored energy of up to 362 MJ per beam. In this paper we summarize our efforts to understand the quench levels of LHC superconducting magnets. We describe beam-loss events and dedicated experiments with beam, as well as the simulation methods used to reproduce the observable signals. The simulated energy depositio...

  3. Simulation and investigation of SiPM’s leakage currents at low voltages

    Science.gov (United States)

    Parygin, P. P.; Popova, E. V.; Grachev, V. M.

    2017-01-01

    Technology Computer-Aided Design (TCAD) allows us to use computers in order to develop semiconductor processing technologies and devices and optimize them. Within a framework of a study of silicon photomultipliers (SiPM) a simulation of these devices has been made. The simulation was performed for the irradiated SiPMs and current-voltage characteristics were obtained for the modeled devices. Investigation of current-voltage curve below breakdown with regard to the simulated structure was performed. Obtained curves are presented.

  4. Molecular Dynamics Simulations of Voltage Gated Cation Channels: Insights on Voltage-Sensor Domain Function and Modulation

    Directory of Open Access Journals (Sweden)

    Lucie eDelemotte

    2012-05-01

    Full Text Available Since their discovery in the 1950s, the structure and function of voltage gated cation channels (VGCC has been largely understood thanks to results stemming from electrophysiology, pharmacology, spectroscopy and structural biology. Over the past decade, computational methods such as molecular dynamics (MD simulations have also contributed, providing molecular level information that can be tested against experimental results, thereby allowing the validation of the models and protocols. Importantly, MD can shed light on elements of VGCC function that cannot be easily accessed through classical experiments. Here, we review the results of recent MD simulations addressing key questions that pertain to the function and modulation of the VGCC’s voltage sensor domain (VSD highlighting: 1 the movement of the S4-helix basic residues during channel activation, articulating how the electrical driving force acts upon them; 2 the nature of the VSD intermediate states on transitioning between open and closed states of the VGCC; and 3 the molecular level effects on the VSD arising from mutations of specific S4 positively charged residues involved in certain genetic diseases.

  5. Simulation Model solves exact the Enigma named Generating high Voltages and high Frequencies by Tesla Coil

    Directory of Open Access Journals (Sweden)

    Simo Janjanin

    2016-11-01

    Full Text Available Simulation model of Tesla coil has been successfully completed, and has been verified the procedure and functioning. The literature and documentation for the model were taken from the rich sources, especially the copies of Tesla patents. The oscillating system‟s electrical scheme consists of the voltage supply 220/50 Hz, Fe transformer, capacitor and belonging chosen electrical components, the air gap in the primary Tesla coil (air transformer and spark gap in the exit of the coil. The investigation of the oscillating process Tesla coil‟s system using the simulation model in MATLAB & SIMULINK have given the exact solution the enigma named the generating high voltage and high frequency the Tesla‟s coil. The inductance voltage from the spark current in the primary (coil with its high voltage impulse excites the oscillating series circuit Ce-L3-R3 on the secondary of the air transformer to its own damped oscillations

  6. Beam-induced quench test of LHC main quadrupole

    CERN Document Server

    Priebe, A; Dehning, B; Effinger, E; Emery, J; Holzer, E B; Kurfuerst, C; Nebot Del Busto, E; Nordt, A; Sapinski, M; Steckert, J; Verweij, A; Zamantzas, C

    2011-01-01

    Unexpected beam loss might lead to a transition of the accelerator superconducting magnet to a normal conducting state. The LHC beam loss monitoring (BLM) system is designed to abort the beam before the energy deposited in the magnet coils reach a quench-provoking level. In order to verify the threshold settings generated by simulation, a series of beam-induced quench tests at various beam energies has been performed. The beam losses are generated by means of an orbital bump peaked in one of main quadrupole magnets (MQ). The analysis includes not only BLM data but also the quench protection system (QPS) and cryogenics data. The measurements are compared to Geant4 simulations of energy deposition inside the coils and corresponding BLM signal outside the cryostat.

  7. Electron beam induced growth of tin whiskers

    Energy Technology Data Exchange (ETDEWEB)

    Vasko, A. C.; Karpov, V. G. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Warrell, G. R.; Parsai, E. I.; Shvydka, Diana, E-mail: diana.shvydka@utoledo.edu [Department of Radiation Oncology, University of Toledo Health Science Campus, Toledo, Ohio 43614 (United States)

    2015-09-28

    We have investigated the influence of electron irradiation on tin whisker growth. Sputtered tin samples exposed to electron beam of 6 MeV energy exhibited fast whisker growth, while control samples did not grow any whiskers. The statistics of e-beam induced whiskers was found to follow the log-normal distribution. The observed accelerated whisker growth is attributed to electrostatic effects due to charges trapped in an insulating substrate. These results offer promise for establishing whisker-related accelerated life testing protocols.

  8. Evidence against a universal electron-beam-induced virtual temperature in graphene

    Science.gov (United States)

    Börner, Pia; Kaiser, Ute; Lehtinen, Ossi

    2016-04-01

    The continuous electron bombardment of a sample during transmission electron microscopy (TEM) drives atomic-scale transformations. In earlier studies the transformations appeared to proceed as if the sample was held at an elevated temperature, and, indeed, the hypothesis of an electron-beam-induced virtual temperature has gained traction in the scientific community. However, the sample is not significantly heated by the electron beam, meaning the processes are not activated by thermal vibrations. Instead, individual collisions between the electrons and the target atoms, and/or excitations of the electronic system, lead to the observed transformations. It is not a priori clear what virtual temperature can be assigned to the conditions under the electron irradiation, or even if such a temperature can be defined at all. Here, we attempt to measure the virtual temperature, specific to this system, by comparing the relative population of the three different divacancy defect states in single-layer graphene to the Boltzmann distribution using calculated energy levels of the defect states. The experiment is conducted using aberration-corrected high-resolution TEM at an acceleration voltage of 80 kV. Atomistic simulations are used to learn about the energetics of the defects. We find that the measured populations cannot be fitted to the Boltzmann distribution, and consequently no universal virtual temperature can be assigned to the system.

  9. Modelling and Simulation of SVM Based DVR System for Voltage Sag Mitigation

    Directory of Open Access Journals (Sweden)

    S. Leela

    2013-12-01

    Full Text Available The aim of this study is to design and simulate three phase DVR system using MATLAB simulink. SVM based DVR is proposed to reduce the sag on the transmission line. The SVM based DVR injects voltage into the line to compensate the voltage drop. Sag is created by connecting a heavy load in parallel with the existing system. This sag will be compensated by injecting the inverter output through an injection transformer. The results of simulation are compared with the theoretical results.

  10. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    Institute of Scientific and Technical Information of China (English)

    Liu Jizhi; Chen Xingbi

    2009-01-01

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

  11. Voltage Sag Mitigation Using Pulse Width Modulation Switched Autotransformer through Matlab Simulation

    Directory of Open Access Journals (Sweden)

    P. Shyam Kiran

    2014-04-01

    Full Text Available In this paper, a new voltage sag compensator for critical loads in electrical distribution system discussed. The proposed scheme employs a Pulse width modulation ac-ac converter along with a auto transformer. During a disturbance such as voltage sag, the proposed scheme supplies the missing voltage and helps in maintaining the rated voltage at the terminals of the critical load. Under normal condition the approach work in bypass mode and delivering utility power directly to load. The proposed system has less number of switching devices and has good compensating capability in comparison to commonly used compensators. Simulation analysis of three-phase compensator is performed in MATLAB/SIMULINK and performance analysis of the system is presented for various levels of sag and swell.

  12. Research of nonlinear simulation on sweep voltage of streak tube imaging lidar

    Science.gov (United States)

    Zhai, Qian; Han, Shao-kun; Zhai, Yu; Lei, Jie-yu; Yao, Jian-feng

    2016-10-01

    In order to study the influence of nonlinear sweep voltage on the range accuracy of streak tube imaging lidar, a nonlinear distance model of streak tube is proposed. The model of the parallel-plate deflection system is studied, and the mathematical relation between the sweep voltage and the position of the image point on the screen is obtained based on the movement rule of phoelectron. And the mathematical model of the sweep voltage is established on the basis of its principle. The simulation of streak image is carried out for the selected staircase target, the range image of the target can be reconstructed by extremum method. Comparing reconstruction result and actual target, the range accuracy caused by the nonlinear sweep voltage is obtained. The curve of the errors varying with target ranges is also obtained. And the range accuracy of the system is analyzed by the means of changing the parameter relate to sweep time.

  13. FPGA in-the-loop simulations of cardiac excitation model under voltage clamp conditions

    Science.gov (United States)

    Othman, Norliza; Adon, Nur Atiqah; Mahmud, Farhanahani

    2017-01-01

    Voltage clamp technique allows the detection of single channel currents in biological membranes in identifying variety of electrophysiological problems in the cellular level. In this paper, a simulation study of the voltage clamp technique has been presented to analyse current-voltage (I-V) characteristics of ion currents based on Luo-Rudy Phase-I (LR-I) cardiac model by using a Field Programmable Gate Array (FPGA). Nowadays, cardiac models are becoming increasingly complex which can cause a vast amount of time to run the simulation. Thus, a real-time hardware implementation using FPGA could be one of the best solutions for high-performance real-time systems as it provides high configurability and performance, and able to executes in parallel mode operation. For shorter time development while retaining high confidence results, FPGA-based rapid prototyping through HDL Coder from MATLAB software has been used to construct the algorithm for the simulation system. Basically, the HDL Coder is capable to convert the designed MATLAB Simulink blocks into hardware description language (HDL) for the FPGA implementation. As a result, the voltage-clamp fixed-point design of LR-I model has been successfully conducted in MATLAB Simulink and the simulation of the I-V characteristics of the ionic currents has been verified on Xilinx FPGA Virtex-6 XC6VLX240T development board through an FPGA-in-the-loop (FIL) simulation.

  14. Fundamental edge broadening effects during focused electron beam induced nanosynthesis

    Directory of Open Access Journals (Sweden)

    Roland Schmied

    2015-02-01

    Full Text Available The present study explores lateral broadening effects of 3D structures fabricated through focused electron beam induced deposition using MeCpPt(IVMe3 precursor. In particular, the scaling behavior of proximity effects as a function of the primary electron energy and the deposit height is investigated through experiments and validated through simulations. Correlated Kelvin force microscopy and conductive atomic force microscopy measurements identified conductive and non-conductive proximity regions. It was determined that the highest primary electron energies enable the highest edge sharpness while lower energies contain a complex convolution of broadening effects. Moreover, it is demonstrated that intermediate energies lead to even more complex proximity effects that significantly reduce lateral edge sharpness and thus should be avoided if desiring high lateral resolution.

  15. Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing

    Directory of Open Access Journals (Sweden)

    K. Horio

    2001-01-01

    Full Text Available Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I–V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I–V characteristics should be quite different between DC and RF conditions.

  16. Beam Induced Pressure Rise at RHIC

    CERN Document Server

    Zhang, S Y; Bai, Mei; Blaskiewicz, Michael; Cameron, Peter; Drees, Angelika; Fischer, Wolfram; Gullotta, Justin; He, Ping; Hseuh Hsiao Chaun; Huang, Haixin; Iriso, Ubaldo; Lee, Roger C; Litvinenko, Vladimir N; MacKay, William W; Nicoletti, Tony; Oerter, Brian; Peggs, Steve; Pilat, Fulvia Caterina; Ptitsyn, Vadim; Roser, Thomas; Satogata, Todd; Smart, Loralie; Snydstrup, Louis; Thieberger, Peter; Trbojevic, Dejan; Wang, Lanfa; Wei, Jie; Zeno, Keith

    2005-01-01

    Beam induced pressure rise in RHIC warm sections is currently one of the machine intensity and luminosity limits. This pressure rise is mainly due to electron cloud effects. The RHIC warm section electron cloud is associated with longer bunch spacings compared with other machines, and is distributed non-uniformly around the ring. In addition to the countermeasures for normal electron cloud, such as the NEG coated pipe, solenoids, beam scrubbing, bunch gaps, and larger bunch spacing, other studies and beam tests toward the understanding and counteracting RHIC warm electron cloud are of interest. These include the ion desorption studies and the test of anti-grazing ridges. For high bunch intensities and the shortest bunch spacings, pressure rises at certain locations in the cryogenic region have been observed during the past two runs. Beam studies are planned for the current 2005 run and the results will be reported.

  17. Simulation of novel complementary bipolar inverters for low-voltage high-speed ULSI

    NARCIS (Netherlands)

    Bubennikov, AN; Zykov, AV

    2000-01-01

    Complementary bipolar (CBi) inverters on scaled down self-aligned transistors with highly-doped bases for advanced high-speed low-voltage low-power deep-submicron ULSI are considered and studied using a simulator PSPICE. A novel symmetrical transistor structure (STS) with undoped (lightly-doped) act

  18. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    Energy Technology Data Exchange (ETDEWEB)

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  19. Simulation of Low-Voltage Arc Plasma During Contact Opening Progress

    Institute of Scientific and Technical Information of China (English)

    WU Yi; RONG Ming-zhe; SUN Zhi-qiang; WANG Xiao-hua; LI Jian; WANG Jian-hua

    2007-01-01

    This paper focuses on the simulation of the low-voltage arc with an opening contact.A controllable experiment setup with a rotating contact is designed to investigate the arc behaviour.Supported by the experiment,the phenomena of arc elongation and commutation in the case of rotating contact are simulated with the dynamic grid technique introduced.Under the given condition of the external magnetic field and the contact rotating velocity,the stagnation and rapid jump of two arc roots are observed by the calculated and experimental arc root displacement.The voltage of arc column can be divided into four phases and its sharp rising progress comes from the increase of the displacement difference between two arc roots in x direction.

  20. Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  1. Simulation of a perfect CVD diamond Schottky diode steep forward current-voltage characteristic

    Science.gov (United States)

    Kukushkin, V. A.

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current-voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  2. Phase Angle Calculation Dynamics of Type 4 Wind Turbines in RMS Simulations during Severe Voltage Dips

    DEFF Research Database (Denmark)

    Altin, Müfit; Göksu, Ömer; Sørensen, Poul Ejnar;

    2016-01-01

    the simulation convergence without adding complexity to the generic models, a first order filtering approach is proposed as a phase angle calculation algorithm in the grid synchronization of the rms type 4 wind turbine models. The proposed approach provides robustness for the simulation of large scale power......In order to conduct power system simulations with high shares of wind energy, standard wind turbine models, which are aimed to be generic rms models for a wide range of wind turbine types, have been developed. As a common practice of rms simulations, the power electronic interface of wind turbines...... is assumed to be ideally synchronized, i.e. grid synchronization (e.g. PLL) is not included in simplified wind turbine models. As will be shown in this paper, this practice causes simulation convergence problems during severe voltage dips and when the loss of synchronism occurs. In order to provide...

  3. Focused electron beam induced deposition: A perspective

    Directory of Open Access Journals (Sweden)

    Michael Huth

    2012-08-01

    Full Text Available Background: Focused electron beam induced deposition (FEBID is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is now particularly attractive for several areas in both, basic and applied research. The present topical review addresses selected examples that highlight this development in the areas of charge-transport regimes in nanogranular metals close to an insulator-to-metal transition, the use of these materials for strain- and magnetic-field sensing, and the prospect of extending FEBID to multicomponent systems, such as binary alloys and intermetallic compounds with cooperative ground states.Results: After a brief introduction to the technique, recent work concerning FEBID of Pt–Si alloys and (hard-magnetic Co–Pt intermetallic compounds on the nanometer scale is reviewed. The growth process in the presence of two precursors, whose flux is independently controlled, is analyzed within a continuum model of FEBID that employs rate equations. Predictions are made for the tunability of the composition of the Co–Pt system by simply changing the dwell time of the electron beam during the writing process. The charge-transport regimes of nanogranular metals are reviewed next with a focus on recent theoretical advancements in the field. As a case study the transport properties of Pt–C nanogranular FEBID structures are discussed. It is shown that by means of a post-growth electron-irradiation treatment the electronic intergrain-coupling strength can be continuously tuned over a wide range. This provides unique access to the transport properties of this material close to the insulator-to-metal transition. In the last part of the review, recent developments in mechanical

  4. Test Results from a Simulated High Voltage Lunar Power Transmission Line

    Science.gov (United States)

    Birchenough, Arthur; Hervol, David

    2008-01-01

    The Alternator Test Unit (ATU) in the Lunar Power System Facility (LPSF) located at the NASA Glenn Research Center (GRC) in Cleveland, OH was modified to simulate high voltage transmission capability. The testbed simulated a 1 km transmission cable length from the ATU to the LPSF using resistors and inductors installed between the distribution transformers. Power factor correction circuitry was used to compensate for the reactance of the distribution system to improve the overall power factor. This test demonstrated that a permanent magnet alternator can successfully provide high frequency AC power to a lunar facility located at a distance.

  5. Test Results From a Simulated High-Voltage Lunar Power Transmission Line

    Science.gov (United States)

    Birchenough, Arthur; Hervol, David

    2008-01-01

    The Alternator Test Unit (ATU) in the Lunar Power System Facility (LPSF) located at the NASA Glenn Research Center (GRC) in Cleveland, Ohio was modified to simulate high-voltage transmission capability. The testbed simulated a 1 km transmission cable length from the ATU to the LPSF using resistors and inductors installed between the distribution transformers. Power factor correction circuitry was used to compensate for the reactance of the distribution system to improve the overall power factor. This test demonstrated that a permanent magnet alternator can successfully provide high-frequency ac power to a lunar facility located at a distance.

  6. Simulation Analysis of Transient Earth Voltages Aroused by Partial Discharge in Switchgear

    Directory of Open Access Journals (Sweden)

    Man Yuyan

    2014-01-01

    Full Text Available The authors investigated the properties of Transient Earth Voltages (TEV Aroused by Partial Discharge in Switchgear by Simulation. The mechanism of TEV aroused by partial discharge in switchgears is analyzed. The Finite Integration Theory (FIT was employed to simulate the propagation of TEV in the switchgear. The simulation results show that the pulse width of TEV increases as the pulse width of PD pulse increases and the amplitude of TEV is proportional to the PD pulse amplitude. There are time differences between the TEV signals of different detecting points when the TEV propagating on the switchgear’s surface. Based on the simulation, a method of locating the PD of switchgear is proposed by positioning multi-sensors on the external surface of switchgear.

  7. Design and Simulation of Dynamic Voltage Restorer based on Fuzzy Controller Optimized by ANFIS

    Directory of Open Access Journals (Sweden)

    Brahim Ferdi

    2014-03-01

    Full Text Available The fuzzy logic controller (FLC appears to be the unique solution when the process is too complex for analysis by conventional techniques or when the available information data are interpreted qualitatively, inexactly or with uncertainty. In literature, the proposed FLC in general consists of two inputs (error and derivative of error and one output. The number of membership functions is chosen in most cases to be five or seven regardless of the approach used for the design. In this paper, we propose Adaptive Neuro-Fuzzy Inference System (ANFIS approach to optimize the two inputs one output FLC with seven membership functions to one input one output FLC with three membership functions without compromising accuracy. The study is applied to control a Dynamic Voltage Restorer (DVR in voltage sag/swell mitigation. The results of simulation using MATLAB/SIMULINK show that the performance of the optimal FLC generated by ANFIS is comparable with the initial given FLC.

  8. Simulation of subnanosecond streamers in atmospheric-pressure air: Effects of polarity of applied voltage pulse

    Science.gov (United States)

    Babaeva, N. Yu.; Naidis, G. V.

    2016-08-01

    Results of simulation of subnanosecond streamer propagation in corona gap configuration, obtained in the framework of 2D fluid model, are presented. Effects related with the polarity of a voltage pulse applied to the stressed electrode are discussed. It is argued that these effects (dependence of the discharge current and propagation velocity on the polarity of applied voltage) observed in experiments can be attributed to the difference in initial (preceding the streamer formation) distributions of charged species inside the gap. This difference can be caused by preionization (at negative polarity) of the gas inside the discharge gap by runaway electrons. Calculated streamers have large widths (up to 1 cm) and move with velocities in the range of 109-1010 cm s-1, similar to experimental data.

  9. Modeling and Simulation Research on Lightning Over-voltage of 500kV Hydroelectric Station

    Directory of Open Access Journals (Sweden)

    Huang Wang-jun

    2012-08-01

    Full Text Available Lightning over-voltage amplitude of equipments on different branch nodes of the arterials has been obtained after the modeling and simulation analysis based on the EMTP (electromagnetic transients program were done on the lightning over-voltage of a 500kV hydroelectric station was with the system’s worst working condition (single-line, single-transforming, and the line tower on the near side of 500kv hydroelectric station’s GIS was struck by lightning. Thus, precise data have been acquired to select suitable equipments and verify the resisting lightning performance of the station. Finally, reasonable measures (such as reducing pulse resistance of line tower are proposed to improve the comprehensive lightning resisting level of hydroelectric stations.

  10. Beam-induced backgrounds in detectors at the ILC

    Energy Technology Data Exchange (ETDEWEB)

    Vogel, Adrian

    2008-11-15

    There is general consensus in the high-energy physics community that the next particle collider to be built should be a linear electron-positron accelerator. Such a machine, colliding point-like particles with a well-defined initial state, would be an ideal complement to the Large Hadron Collider (LHC) and would allow high-precision measurements of the new physics phenomena that are likely to be discovered at the TeV energy scale. The most advanced project in that context is the International Linear Collider (ILC), aiming for a centre-of-mass energy of 500 GeV and a luminosity of 2 x 10{sup 34} cm{sup -2}s{sup -1} in its first stage. One of the detector concepts that are currently being developed and studied is the so-called International Large Detector (ILD). A prime feature of the ILD concept is the usage of a Time Projection Chamber (TPC) as the main tracker, which allows to reach the required momentum resolution, but which also has excellent particle identification capabilities and a highly robust and efficient tracking. The beam-beam interaction of the strongly focused particle bunches at the ILC will produce beamstrahlung photons, which can in turn scatter to electron-positron pairs. These pairs are a major source of detector backgrounds. This thesis explains the methods to study the effects of beam-induced electron-positron pair backgrounds with Mokka, a full detector simulation for the ILC that is based on Geant4, and it presents the simulation results for different detector configurations and various small modifications. The main focus of the simulations and their analysis is on the vertex detector and the TPC, but results for the inner silicon trackers and the hadronic calorimeters are shown as well. (orig.)

  11. Numerical Simulation of Optically-Induced Dielectrophoresis Using a Voltage-Transformation-Ratio Model

    Directory of Open Access Journals (Sweden)

    Sheng-Chieh Huang

    2013-02-01

    Full Text Available Optically-induced dielectrophoresis (ODEP has been extensively used for the manipulation and separation of cells, beads and micro-droplets in microfluidic devices. With this approach, non-uniform electric fields induced by light projected on a photoconductive layer can be used to generate attractive or repulsive forces on dielectric materials. Then, moving these light patterns can be used for the manipulation of particles in the microfluidic devices. This study reports on the results from numerical simulation of the ODEP platform using a new model based on a voltage transformation ratio, which takes the effective electrical voltage into consideration. Results showed that the numerical simulation was in reasonably agreement with experimental data for the manipulation of polystyrene beads and emulsion droplets, with a coefficient of variation less than 6.2% (n = 3. The proposed model can be applied to simulations of the ODEP force and may provide a reliable tool for estimating induced dielectrophoretic forces and electric fields, which is crucial for microfluidic applications.

  12. Experimental research on mechanical properties of high voltage transmission lines after the simulated wildfires

    Directory of Open Access Journals (Sweden)

    Wang Tianzheng

    2015-01-01

    Full Text Available In order to determine whether the mechanical performance after the fires of high voltage transmission lines meets the requirements of normal use, this article simulates the wildfire, and does the mechanical performance experiment of high voltage transmission lines(HVT lines after the simulated wildfires. The experiment studied the breaking force and elongation of each layer of 500kv HVT lines after the simulated wildfire. Experimental results show that, after fires, each layer of single aluminum wires of 500kv HVT lines have low breaking force which can be decreased obviously to half of that of new lines. For the steel core, decrease of breaking force is not obvious than aluminum wires, and with the increasing degree of wildfires, it increases gradually to a maximum of 35% of new steel lines’ breaking force. After wildfires, aluminum lines’ resistance ability of deformation decreases significantly, and its plastic deformation increases obviously during uniaxial tension. The steel core has little plastic deformation, and layers of aluminum become fluffy after fires. Therefore, the steel core main bearing load after wildfires.

  13. The electric characteristics simulation and structural parameters calculation of Si-based stabilitron with stabilizing voltage 6,5 V

    Directory of Open Access Journals (Sweden)

    Koritko N. N.

    2009-06-01

    Full Text Available The results of an optimization simulation of original manufacturing process and electric characteristics of stabilitrons with stabilizing voltage Ust=(6,5±0,5 V are presented. The flow of manufacturing process of simulated stabilitron includes the n+-type guard rings regions formation in the р-type substrate; the р–n-junction formation in the р-type substrate; intermediate oxide formation; metal deposition. The stabilizing voltage and differential resistance of the stabilitron voltage-current characteristic reverse branch values were received as the result of calculations at the normal, reduced and high temperature.

  14. Ion beam induced stress formation and relaxation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  15. TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

    CERN Document Server

    Buckland, Matthew Daniel

    2016-01-01

    The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

  16. Numerical simulation of corona-induced vibration of high voltage conductor

    Institute of Scientific and Technical Information of China (English)

    A. GOURBI; M. BRAHAMI; A. TILMATINE; P. PIROTTE

    2009-01-01

    When it rains, electric power transmission lines start vibrating due to corona effect. This type of vibration is known as "corona-induced vibration". The aim of this paper is to elaborate a mathematical model for numerical simulation of the corona-induced vibration, with consid-eration of the influence of the magnitude and the polarity of the electric field on the conductor surface. Finite element method was employed to develop the numerical model,and the finite difference method was used for the time discretisation. The moment of application of the corona-induced force is evaluated using the resultant vertical force applied to a water drop, suspended under a high voltage conductor. Some experimental results of other authors are exploited to evaluate the precision of the simulation and the validation of numerical results.

  17. Simulator verification of thyristor controlled series capacitor SVR (Synchronous Voltage Reversal) scheme

    Energy Technology Data Exchange (ETDEWEB)

    Dickmander, D.L. [ABB Power T and D Company Inc., Raleigh, NC (United States). Transmission Technology Inst.; Rudin, S. [ABB Power Systems AB, Vaesteraas (Sweden). Reactive Power Compensation Div.

    1995-12-31

    This paper presents a simulator small-signal verification study conducted for a new Thyristor Controlled Series Capacitor (TCSC) control scheme referred to as the Synchronous Voltage Reversal (SVR) scheme. The goal of the SVR scheme is to achieve an inherently inductive sub-synchronous impedance characteristic for the TCSC, while preserving the capability to add higher level control loops. A detailed TCSC control model using field-proven digital control hardware, and programmed with the SVR scheme, was incorporated into a simulator representation of the IEEE First Benchmark system. Detailed measurements are presented in the paper to demonstrate that the SVR scheme successfully mitigates SSR (sub-synchronous resonance) conditions for the studied system. 8 refs, 13 figs, 2 tabs

  18. Simulation Investigation of SPWM, THIPWM and SVPWM Techniques for Three Phase Voltage Source Inverter

    Directory of Open Access Journals (Sweden)

    Zulkifilie Bin Ibrahim

    2014-03-01

    Full Text Available Pulse width modulation (PWM technique is one of the vital issues for power electronic circuit control. A number of Pulse width modulation (PWM techniques are increasingly applied in many new industrial applications that require superior performance. The most widely applied PWM technique for three-phase voltage source inverters are Sine Pulse Width Modulation (SPWM, Third Harmonic Injection Pulse Width Modulation (THIPWM and Space Vector Pulse Width Modulation (SVPWM. SPWM is the most simple modulation technique that can realize easily in analog circuit. However, it has some drawbacks such as higher total harmonic distortion (THD, lower switching frequency and not capable in over modulation region. THIPWM and SVPWM both provide better THD compared to SPWM. SVPWM shows lower THD in over modulation region and in high frequency application compared to THIPWM. These three techniques are discussed, analyzed and compared in terms of modulation index, switching frequency and inverter input voltage in this paper. The modeling and simulation for all PWM techniques have been done by using MATLAB/SIMULINK and Origin 6.1. From the simulation results, SVPWM shows the best performance and meet IEEE 519 standard of current harmonics level.

  19. Dynamic Voltage Frequency Scaling Simulator for Real Workflows Energy-Aware Management in Green Cloud Computing.

    Science.gov (United States)

    Cotes-Ruiz, Iván Tomás; Prado, Rocío P; García-Galán, Sebastián; Muñoz-Expósito, José Enrique; Ruiz-Reyes, Nicolás

    2017-01-01

    Nowadays, the growing computational capabilities of Cloud systems rely on the reduction of the consumed power of their data centers to make them sustainable and economically profitable. The efficient management of computing resources is at the heart of any energy-aware data center and of special relevance is the adaptation of its performance to workload. Intensive computing applications in diverse areas of science generate complex workload called workflows, whose successful management in terms of energy saving is still at its beginning. WorkflowSim is currently one of the most advanced simulators for research on workflows processing, offering advanced features such as task clustering and failure policies. In this work, an expected power-aware extension of WorkflowSim is presented. This new tool integrates a power model based on a computing-plus-communication design to allow the optimization of new management strategies in energy saving considering computing, reconfiguration and networks costs as well as quality of service, and it incorporates the preeminent strategy for on host energy saving: Dynamic Voltage Frequency Scaling (DVFS). The simulator is designed to be consistent in different real scenarios and to include a wide repertory of DVFS governors. Results showing the validity of the simulator in terms of resources utilization, frequency and voltage scaling, power, energy and time saving are presented. Also, results achieved by the intra-host DVFS strategy with different governors are compared to those of the data center using a recent and successful DVFS-based inter-host scheduling strategy as overlapped mechanism to the DVFS intra-host technique.

  20. Experimental and simulation study of a capacitively coupled oxygen discharge driven by tailored voltage waveforms

    Science.gov (United States)

    Derzsi, Aranka; Lafleur, Trevor; Booth, Jean-Paul; Korolov, Ihor; Donkó, Zoltán

    2016-02-01

    We report experimental and particle-based kinetic simulation studies of low-pressure capacitively coupled oxygen plasmas driven by tailored voltage waveforms that consist of up to four harmonics of base frequency 13.56 MHz. Experimentally determined values of DC self-bias and electrical power deposition, as well as flux density and flux-energy distribution of the positive ions at the grounded electrode are compared with simulation data for a wide range of operating conditions. Very good agreement is found for self-bias and flux-energy distribution of the positive ions at the electrodes, while a fair agreement is reached for discharge power and ion flux data. The simulated spatial and temporal behaviour of the electric field, electron density, electron power absorption, ionization rate and mean electron energy shows a transition between sheath expansion heating and drift-ambipolar discharge modes, induced by changing either the number of harmonics comprising the excitation waveform or the gas pressure. The simulations indicate that under our experimental conditions the plasma operates at high electronegativity, and also reveal the crucial role of {{\\text{O}}2}≤ft({{a}1}{{Δ }g}\\right) singlet metastable molecules in establishing discharge behavior via the fast destruction of negative ions within the bulk plasma.

  1. Modeling and Simulation of 3-Phase Voltage and Current Source Inverter using MATLAB/SIMULINK for Various Loads

    Directory of Open Access Journals (Sweden)

    Braj Kishor Verma

    2014-05-01

    Full Text Available In today’s world inverters are used to convert a single or multiple phase AC voltages from a DC supply source. Various types of inverters such as 1-phase inverters and 3-phase inverters are used for various industrial applications. Inverter comes in two categories which is voltage source inverter (VSI and current source inverter (CSI. In this paper work simulation of three phase VSI and CSI is performed using MATLAB/SIMULINK. THD is compared in voltage and current waveform and analyzed in different load conditions

  2. Hysteresis Current Control of the Single-Phase Voltage Source Inverter Using eMEGAsim Real-Time Simulator

    Directory of Open Access Journals (Sweden)

    BOTEZAN, A.

    2015-08-01

    Full Text Available The paper presents the hysteresis current control of the voltage source inverter. The eMEGAsim real-time simulator is developed by OPAL-RT. Real-time simulation is used in many cases because it allows the behavior of the industrial processes operation to be determined. Two research directions are developed in this case, Rapid Control Prototyping and Hardware-In-the-Loop. Using eMEGAsim simulator allows implementing the command and control strategy of a single-phase voltage source inverter. At this stage, the real-time behavior of operation is monitored, because the voltage source inverter will be the part of a single-phase shunt active filter. In order to command and control the voltage source inverter, the current and voltage signals are acquired, since these signals are necessary to estimate reference signal. Extension of the Instantaneous Reactive Power Theorem is used because this theorem is suitable for single-phase active filter control. To test the real-time command and control strategy implemented, it was used a low power single-phase voltage source inverter (full bridge.

  3. Fabrication of plasmonic nanostructures with electron beam induced deposition

    NARCIS (Netherlands)

    Acar, H.

    2013-01-01

    The work described in this thesis was shaped by the goal---coming up new approaches to fabricate plasmonic materials with electron beam induced deposition (EBID). One-step, bottom-up and direct-write are typical adjectives that are used to indicate the advantageous properties of this technique. Thes

  4. Proximity effect in ion-beam-induced deposition of nanopillars

    NARCIS (Netherlands)

    Chen, P.; Salemink, H.W.M.; Alkemade, P.F.A.

    2009-01-01

    Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a

  5. Helium ion beam induced growth of hammerhead AFM probes

    NARCIS (Netherlands)

    Nanda, G.; Veldhoven, E. van; Maas, D.J.; Sadeghian Marnani, H.; Alkemade, P.F.A.

    2015-01-01

    The authors report the direct-write growth of hammerhead atomic force microscope (AFM) probes by He+ beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+ beam during exposure to a PtC precursor gas. In the f

  6. Simulation Analysis for Opening Performance of Medium Voltage Vacuum Circuit Breaker Based on ADAMS and Maxwell

    Directory of Open Access Journals (Sweden)

    Ding Xianliang

    2017-01-01

    Full Text Available The circuit breakers play a important role in control and protect the power systemand the vacuum circuit breaker has beenwidely used in the field of medium voltage with its excellent opening performance.Virtual prototyping technology is alsobecamemore and more popularin design and optimization of the vacuum circuit breaker. In this paper, the electromagnetic simulation software Ansoft Maxwell is used to analyze the electric repulsion of the circuit breaker in the case of open the rated short circuit breaking current. The 3D model that wasbuilt by CREOis imported into ADAMS. Thenconstraints, contact force, and the electric repulsion forcethat was analysezed in Ansoft Maxwell is added into the 3D model.Therefore, we can carry on the multi-body dynamics simulation to the 3D model. Then We can get the openingperformance of the vacuum circuit breakerin the condition of open circuit rated short circuit breaking current. The simulation results show that the circuit breaker can still meet the performance requirements in the condition of open circuit rated short circuit breaking current.

  7. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Science.gov (United States)

    Liebes, Yael; Hadad, Binyamin; Ashkenasy, Nurit

    2011-07-01

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  8. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Liebes, Yael; Ashkenasy, Nurit [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Hadad, Binyamin, E-mail: nurita@bgu.ac.il [The Ilze Kaz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel)

    2011-07-15

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  9. STUDY OF THE BEAM INDUCED RADIATION IN THE CMS DETECTOR AT THE LARGE HADRON COLLIDER

    CERN Document Server

    Singh, Amandeep P; Mokhov, Nikolai; Beri, Suman Bala

    2009-01-01

    point, are most vulnerable to beam-induced radiation. We have recently carried out extensive monte carlo simulation studies using MARS program to estimate particle fluxes and radiation dose in the CMS silicon pixel and strip trackers from proton-proton collisions at $\\sqrt s $=14 TeV and from machine induced background such as beam-gas interactions and beam-halo. We will present results on radiation dose, particle fluxes and spectra from these studies and discuss implications for radiation damage and performance of the CMS silicon tracker detec...

  10. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  11. On the performance of voltage stepping for the simulation of adaptive, nonlinear integrate-and-fire neuronal networks.

    Science.gov (United States)

    Kaabi, Mohamed Ghaith; Tonnelier, Arnaud; Martinez, Dominique

    2011-05-01

    In traditional event-driven strategies, spike timings are analytically given or calculated with arbitrary precision (up to machine precision). Exact computation is possible only for simplified neuron models, mainly the leaky integrate-and-fire model. In a recent paper, Zheng, Tonnelier, and Martinez (2009) introduced an approximate event-driven strategy, named voltage stepping, that allows the generic simulation of nonlinear spiking neurons. Promising results were achieved in the simulation of single quadratic integrate-and-fire neurons. Here, we assess the performance of voltage stepping in network simulations by considering more complex neurons (quadratic integrate-and-fire neurons with adaptation) coupled with multiple synapses. To handle the discrete nature of synaptic interactions, we recast voltage stepping in a general framework, the discrete event system specification. The efficiency of the method is assessed through simulations and comparisons with a modified time-stepping scheme of the Runge-Kutta type. We demonstrated numerically that the original order of voltage stepping is preserved when simulating connected spiking neurons, independent of the network activity and connectivity.

  12. Quantitative analysis of irreversibilities causes voltage drop in fuel cell (simulation and modeling)

    Energy Technology Data Exchange (ETDEWEB)

    Ghadamian, Hossein [Azad Univ., Dept. of Energy Engineering, Tehran (Iran); Saboohi, Yadolah [Sharif Energy Research Inst. (SERI), Tehran (Iran)

    2004-11-30

    Power level of a fuel cell depends on its operating condition, which is product of voltage and current-density the highest level of voltage is identified as reversible open circuit voltage (ROCV), which represents an ideal theoretical case [J. Larmin, A. Dicks, Fuel Cell System Explained, Wiley, 2000 (ISBN)]. Compared to that is ideal operating voltage which is usually characterized as open circuit voltage (OCV). An evaluation of deviation of operating voltage level from ideal operational case may provide information on the extent of improving efficiency and energy efficiency of a fuel cell. Therefore, quantification of operation deviation from OCV is the main point that is discussed in the present paper. The analysis procedure of voltage drop is based on step-by-step review of voltage drops over activation, internal currents (fuel-cross-over), Ohmic and mass-transport or concentration losses. Accumulated total voltage drops would be estimated as a sum of aforementioned losses. The accumulated voltage drops will then be reduced from OCV to obtain the operating voltage level. The above numerical analysis has been applied to identify the extents of voltage drop. The possible reducing variables in voltage drops reviewed and concluded that the activation loss has considerable impact on total voltage drops and it explains the most part of total losses. It is also found that the following correspondence parameters cause decrease in voltage drops: 1. Temperature increasing; 2. Pressure increasing; 3. Hydrogen or oxygen concentration increasing; 4. Electrode effective surface increasing; 5. Electrode and electrolyte, conductivity modification; 6. Electrolyte thickness reducing up to possible limitation; 7. Connection modification. (Author)

  13. Numerical simulation of high voltage electric pulse comminution of phosphate ore

    Institute of Scientific and Technical Information of China (English)

    Razavian Seyed Mohammad; Rezai Bahram; Irannajad Mehdi; Ravanji Mohammad Hasan

    2015-01-01

    Numerical simulation of the electrical field distribution helps in-depth understanding of the mechanisms behind the responses and the benefits of the high voltage pulse comminution. The COMSOL Multiphysics package was used to numerically simulate the effect of ore compositions in this study. Regarding phos-phate ore particles shape and composition, the effects of mineral composition, particle size, particle shape and electrodes distance were investigated on the electrical field intensity and distribution. The results show that the induced electrical field is significantly dependent on the electrical properties of minerals, the feed particle size and the location of conductive minerals in ores. The angle of material contact sur-face with the discharge electrode is also an important factor in the intensity of electrical field. Moreover, it is found that the specific liberation effect at the disintegration of phosphate ore by electrical pulses is due to the locality of the electrical field at the interface of mineral components of the phosphate ore aggregates with different permittivities. However, the intensity of the electrical field increases with shar-pening the contact angle. Besides, the electrical discharge in the samples is converted to the elec-trohydraulic discharge across the surrounding water by changing the distance between the discharge electrode and sample surface.

  14. Degradation of High Voltage Polymeric Insulators in Arid Desert's Simulated Environmental Conditions

    Directory of Open Access Journals (Sweden)

    Yasin Khan

    2009-01-01

    Full Text Available Problem statement: High Voltage (HV polymeric insulators are replacing ceramic insulator commonly used for HV outdoor networks due to their ease of handling, reliability and cost. However, their long term performance and reliability are major concerns to power utilities. Approach: To investigate their performance in arid desert's conditions, two types of HV composite insulators were aged as per International Electrochemical Commission (IEC standard-61109. Additional test samples were subjected to accelerated aging conditions simulating the actual Ultraviolet (UV radiation intensity and temperature in the inland desert. Results: This study described the experimental results of the effects of thermo electric stress and UV radiations on the polymeric insulators aged under two conditions i.e., as per IEC standard and modified IEC standard that simulates the inland arid desert. The tests results after the artificial accelerated aging indicated that the dielectric response of thermoplastic insulators under the tested thermo-electric cum UV-irradiations outperforms Silicone rubber insulators.Conclusion: From the obtained results it will be easy to assess the performance and suitability of composite insulators for their applications in arid desert environments.

  15. Simulation and Experimental Study of Arc Column Expansion After Ignition in Low-Voltage Circuit Breakers

    Institute of Scientific and Technical Information of China (English)

    MA Qiang; RONG Mingzhe; WU Yi; XU Tiejun; SUN Zhiqiang

    2008-01-01

    The dynamicprocess of arc pressure and corresponding arc column expansion, which is the main feature after arc ignition and has a significant effect on the breaking behaviour of low -voltage circuit breakers, is studied. By constructing a three dimensional mathematical model of air arc plasma and adopting the Control Volume Method, the parameters of arc plasma including temperature and pressure axe obtained. The variations of pressure field and temperature field with time are simulated. The result indicates that there are six stages for the process of arc column expansion according to the variation of pressure in arc chamber. In the first stage, the maximal pressure locates in the region close to cathode, and in the second stage the maximal pressure shifts to the region close to the anode. In the third stage, the pressure difference between the middle of arc column and the ambient gas is very large, so the arc column begins to expand apparently. In the fourth stage, the pressure wave propagates towards both ends and the maximal pressure appears at the two ends when the pressure wave reaches both sidewalls. In the fifth stage, the pressure wave is reflected and collides in the middle of the arc chamber. In the last stage, the propagation and reflection of pressure wave will repeat several times until a steady burning state is reached. In addition, the experimental results of arc column expansion, corresponding to the arc pressure variation, are presented to verify the simulation results.

  16. Simulation of a Narrowband Power Line Communications System over Medium Voltage

    Directory of Open Access Journals (Sweden)

    Nikolaos Chiotellis

    2016-03-01

    Full Text Available Narrowband Power Line Communications (NB-PLCs are investigated as an alternative option for transferring low rate smart grid (SG data via Medium Voltage (MV power lines. In this framework, two variants of orthogonal frequency division multiplexing are examined, namely Filtered-OFDM (F-OFDM and Wavelet-OFDM (W-OFDM, in an attempt to determine which of them is capable of transmitting low rate SG data to greater distances over non-branched MV power lines. The reach of NB-PLC signals via MV power lines is estimated, taking into account the transfer function of the relevant PLC channels and noise mechanisms as well as the specific features of the two modulation options under consideration. Simulations show that NB-PLC transmission constitutes a technically feasible and economically affordable option for exchanging low rate data with remote SG nodes dispersed over the MV grid. Moreover, simulations show that F-OFDM allows low rate data transmission to considerably greater distances compared to W-OFDM.

  17. Low tube voltage CT for improved detection of pancreatic cancer: detection threshold for small, simulated lesions

    Directory of Open Access Journals (Sweden)

    Holm Jon

    2012-07-01

    Full Text Available Abstract Background Pancreatic ductal adenocarcinoma is associated with dismal prognosis. The detection of small pancreatic tumors which are still resectable is still a challenging problem. The aim of this study was to investigate the effect of decreasing the tube voltage from 120 to 80 kV on the detection of pancreatic tumors. Methods Three scanning protocols was used; one using the standard tube voltage (120 kV and current (160 mA and two using 80 kV but with different tube currents (500 and 675 mA to achieve equivalent dose (15 mGy and noise (15 HU as that of the standard protocol. Tumors were simulated into collected CT phantom images. The attenuation in normal parenchyma at 120 kV was set at 130 HU, as measured previously in clinical examinations, and the tumor attenuation was assumed to differ 20 HU and was set at 110HU. By scanning and measuring of iodine solution with different concentrations the corresponding tumor and parenchyma attenuation at 80 kV was found to be 185 and 219 HU, respectively. To objectively evaluate the differences between the three protocols, a multi-reader multi-case receiver operating characteristic study was conducted, using three readers and 100 cases, each containing 0–3 lesions. Results The highest reader averaged figure-of-merit (FOM was achieved for 80 kV and 675 mA (FOM = 0,850, and the lowest for 120 kV (FOM = 0,709. There was a significant difference between the three protocols (p t-test shows that there was a significant difference between 120 and 80 kV, but not between the two levels of tube currents at 80 kV. Conclusion We conclude that when decreasing the tube voltage there is a significant improvement in tumor conspicuity.

  18. Strain-dependent conductivity of granular metals prepared by focused particle beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grimm, Christina; Baranowski, Markus; Huth, Michael [Physikalisches Institut, Goethe-Universitaet, Frankfurt am Main (Germany); Voelklein, Friedemann [Institut fuer Mikrotechnologien, Hochschule RheinMain, Ruesselsheim (Germany)

    2010-07-01

    We report on the strain-dependence of the electrical conductivity of granular metals prepared by focused particle beam induced deposition. The samples were prepared in a dual-beam electron / Ga ion scanning microscope using selected precursors, such as W(CO){sub 6}. Stripe-like deposits were fabricated on dedicated cantilevers pre-patterned with contact pads made from Cr/Au. The cantilever deflection was induced in-situ by means of a four axes nano-manipulator and the conductivity change was recorded by lock-in technique employing a Wheatstone resistance bridge. Current-voltage characteristics and strain-dependence were measured for samples of various thicknesses and composition. For selected samples time-dependent conductivity data were taken as the samples were slowly exposed to air.

  19. Study of ion beam induced depolymerization using positron annihilation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Puglisi, O. E-mail: opuglisi@dipchi.unict.it; Fragala, M.E.; Lynn, K.G.; Petkov, M.; Weber, M.; Somoza, A.; Dupasquier, A.; Quasso, F

    2001-04-01

    Ion beam induced depolymerization of polymers is a special class of ion beam induced chemical reaction which gives rise to catastrophic 'unzipping' of macromolecules with production of large amounts of the monomer, of the order of many hundreds monomer molecules per each macromolecule. The possible modification of the density at microscopic level prompted us to undertake a study of this effect utilizing positron annihilation techniques in Poly(methylmethacrylate) (PMMA) before and after bombardment with He{sup +} 300 keV ions at 200 deg. C. Preliminary results shown here indicate that before bombardment there is a reproducible dependence of nano-hole distribution on the sample history. Moreover at 200 deg. C we do not detect formation of new cavities as a consequence of the strong depolymerization that occurs under the ion beam. The possible correlation of these findings with transport properties of PMMA at temperature higher than the glass transition temperature will be discussed.

  20. Design, Experiments and Simulation of Voltage Transformers on the Basis of a Differential Input D-dot Sensor

    Directory of Open Access Journals (Sweden)

    Jingang Wang

    2014-07-01

    Full Text Available Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  1. Design, experiments and simulation of voltage transformers on the basis of a differential input D-dot sensor.

    Science.gov (United States)

    Wang, Jingang; Gao, Can; Yang, Jie

    2014-07-17

    Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  2. Nanopillar growth by focused helium ion-beam-induced deposition

    NARCIS (Netherlands)

    Chen, P.; Veldhoven, E. van; Sanford, C.A.; Salemink, H.W.M.; Maas, D.J.; Smith, D.A.; Rack, P.D.; Alkemade, P.F.A.

    2010-01-01

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH3) 3Pt(CPCH3) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that el

  3. Design and Simulation Test of an Open D-Dot Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Yunjie Bai

    2015-09-01

    Full Text Available Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation.

  4. Modeling and Simulation of Flexible Transmission Mechanism with Multiclearance Joints for Ultrahigh Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Fangang Meng

    2015-01-01

    Full Text Available The transmission mechanism, of which the dynamic characteristics determine the reliability of the circuit breaker, is the principal component of the ultrahigh voltage (UHV circuit breaker. The characteristics of transmission mechanism are quick motion, high sensibility, and high reliability. The transmission mechanism with multiclearance joints present strong no-linear vibration feature which strongly affects the reliability of the UHV circuit breaker. In this investigation, a planar rigid-flexible coupling model of the transmission mechanism considering the clearance joints and the flexibility of components is established by using ADAMS software. The dynamic contact model in clearance joints is performed, based on clearance vector model of clearance joint. Then, the reliability of the model is proved by means of comparing the results of experiments. The simulation results show that the dynamic response of the mechanism is greatly influenced by the clearance and the flexibility of components has a role of suspension for the mechanism. Moreover, the influence of the clearance size, input speed, and number of clearance joints on the dynamic characteristics of the mechanism are also investigated.

  5. Omega currents in voltage-gated ion channels: what can we learn from uncovering the voltage-sensing mechanism using MD simulations?

    Science.gov (United States)

    Tarek, Mounir; Delemotte, Lucie

    2013-12-17

    Ion channels conduct charged species through otherwise impermeable biological membranes. Their activity supports a number of physiological processes, and genetic mutations can disrupt their function dramatically. Among these channels, voltage gated cation channels (VGCCs) are ubiquitous transmembrane proteins involved in electrical signaling. In addition to their selectivity for ions, their function requires membrane-polarization-dependent gating. Triggered by changes in the transmembrane voltage, the activation and deactivation of VGCCs proceed through a sensing mechanism that prompts motion of conserved positively charged (basic) residues within the S4 helix of a four-helix bundle, the voltage sensor domain (VSD). Decades of experimental investigations, using electrophysiology, molecular biology, pharmacology, and spectroscopy, have revealed details about the function of VGCCs. However, in 2005, the resolution of the crystal structure of the activated state of one member of the mammalian voltage gated potassium (Kv) channels family (the Kv1.2) enabled researchers to make significant progress in understanding the structure-function relationship in these proteins on a molecular level. In this Account, we review the use of a complementary technique, molecular dynamics (MD) simulations, that has offered new insights on this timely issue. Starting from the "open-activated state" crystal structure, we have carried out large-scale all atom MD simulations of the Kv1.2 channel embedded in its lipidic environment and submitted to a hyperpolarizing (negative) transmembrane potential. We then used steered MD simulations to complete the full transition to the resting-closed state. Using these procedures, we have followed the operation of the VSDs and uncovered three intermediate states between their activated and deactivated conformations. Each conformational state is characterized by its network of salt bridges and by the occupation of the gating charge transfer center by a

  6. Direct-write deposition and focused-electron-beam-induced purification of gold nanostructures.

    Science.gov (United States)

    Belić, Domagoj; Shawrav, Mostafa M; Gavagnin, Marco; Stöger-Pollach, Michael; Wanzenboeck, Heinz D; Bertagnolli, Emmerich

    2015-02-04

    Three-dimensional gold (Au) nanostructures offer promise in nanoplasmonics, biomedical applications, electrochemical sensing and as contacts for carbon-based electronics. Direct-write techniques such as focused-electron-beam-induced deposition (FEBID) can provide such precisely patterned nanostructures. Unfortunately, FEBID Au traditionally suffers from a high nonmetallic content and cannot meet the purity requirements for these applications. Here we report exceptionally pure pristine FEBID Au nanostructures comprising submicrometer-large monocrystalline Au sections. On the basis of high-resolution transmission electron microscopy results and Monte Carlo simulations of electron trajectories in the deposited nanostructures, we propose a curing mechanism that elucidates the observed phenomena. The in situ focused-electron-beam-induced curing mechanism was supported by postdeposition ex situ curing and, in combination with oxygen plasma cleaning, is utilized as a straightforward purification method for planar FEBID structures. This work paves the way for the application of FEBID Au nanostructures in a new generation of biosensors and plasmonic nanodevices.

  7. Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    B.M. Omer

    2014-04-01

    Full Text Available AMPS-1D (Analysis of Microelectronic and Photonic Structure simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit voltage on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections of these states are small.

  8. Characterisation and mitigation of beam-induced backgrounds observed in the ATLAS detector during the 2011 proton-proton run

    CERN Document Server

    Aad, Georges; Abbott, Brad; Abdallah, Jalal; Abdel Khalek, Samah; Abdelalim, Ahmed Ali; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Addy, Tetteh; Adelman, Jahred; Adomeit, Stefanie; Adragna, Paolo; Adye, Tim; Aefsky, Scott; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Aharrouche, Mohamed; Ahlen, Steven; Ahles, Florian; Ahmad, Ashfaq; Ahsan, Mahsana; Aielli, Giulio; Akdogan, Taylan; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alam, Mohammad; Alam, Muhammad Aftab; Albert, Justin; Albrand, Solveig; Aleksa, Martin; Aleksandrov, Igor; Alessandria, Franco; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Aliev, Malik; Alimonti, Gianluca; Alison, John; Allbrooke, Benedict; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alon, Raz; Alonso, Alejandro; Alonso, Francisco; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amelung, Christoph; Ammosov, Vladimir; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amram, Nir; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Andrieux, Marie-Laure; Anduaga, Xabier; Angelidakis, Stylianos; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aoun, Sahar; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Arce, Ayana; Arfaoui, Samir; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Engin; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnault, Christian; Artamonov, Andrei; Artoni, Giacomo; Arutinov, David; Asai, Shoji; Ask, Stefan; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astbury, Alan; Atkinson, Markus; Aubert, Bernard; Auge, Etienne; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Avramidou, Rachel Maria; Axen, David; Azuelos, Georges; Azuma, Yuya; Baak, Max; Baccaglioni, Giuseppe; Bacci, Cesare; Bach, Andre; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagnaia, Paolo; Bahinipati, Seema; Bai, Yu; Bailey, David; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Mark; Baker, Sarah; Balek, Petr; Banas, Elzbieta; Banerjee, Piyali; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barbaro Galtieri, Angela; Barber, Tom; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Bardin, Dmitri; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Barrillon, Pierre; Bartoldus, Rainer; Barton, Adam Edward; Bartsch, Valeria; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battaglia, Andreas; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beale, Steven; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becks, Karl-Heinz; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Begel, Michael; Behar Harpaz, Silvia; Behera, Prafulla; Beimforde, Michael; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellomo, Massimiliano; Belloni, Alberto; Beloborodova, Olga; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Benoit, Mathieu; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jürg; Bernat, Pauline; Bernhard, Ralf; Bernius, Catrin; Berry, Tracey; Bertella, Claudia; Bertin, Antonio; Bertolucci, Federico; Besana, Maria Ilaria; Besjes, Geert-Jan; Besson, Nathalie; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien

    2013-01-01

    This paper presents a summary of beam-induced backgrounds observed in the ATLAS detector and discusses methods to tag and remove background contaminated events in data. Trigger-rate based monitoring of beam-related backgrounds is presented. The correlations of backgrounds with machine conditions, such as residual pressure in the beam-pipe, are discussed. Results from dedicated beam-background simulations are shown, and their qualitative agreement with data is evaluated. Data taken during the passage of unpaired, i.e. non-colliding, proton bunches is used to obtain background-enriched data samples. These are used to identify characteristic features of beam-induced backgrounds, which then are exploited to develop dedicated background tagging tools. These tools, based on observables in the Pixel detector, the muon spectrometer and the calorimeters, are described in detail and their efficiencies are evaluated. Finally an example of an application of these techniques to a monojet analysis is given, which demonstra...

  9. The future of focused electron beam-induced processing

    Energy Technology Data Exchange (ETDEWEB)

    Hagen, C.W. [Delft University of Technology, Department of Imaging Physics, Faculty of Applied Sciences, Delft (Netherlands)

    2014-12-15

    A perspective is sketched for the field of focused electron beam-induced processing (FEBIP). The FEBIP lithography technique is compared to the very successful resist-based electron beam lithography (EBL) technique. The advantages of FEBIP over EBL are identified, the main advantage being its high spatial resolution. This will enable FEBIP to become an important lithography technique for the fabrication of devices with critical dimension in the range between 1 and 20 nm and serve as a complementary technique to EBL. It will be discussed what needs to be done to achieve this and what the potential applications are. (orig.)

  10. Toward sensitive graphene nanoribbon-nanopore devices by preventing electron beam-induced damage.

    Science.gov (United States)

    Puster, Matthew; Rodríguez-Manzo, Julio A; Balan, Adrian; Drndić, Marija

    2013-12-23

    Graphene-based nanopore devices are promising candidates for next-generation DNA sequencing. Here we fabricated graphene nanoribbon-nanopore (GNR-NP) sensors for DNA detection. Nanopores with diameters in the range 2-10 nm were formed at the edge or in the center of graphene nanoribbons (GNRs), with widths between 20 and 250 nm and lengths of 600 nm, on 40 nm thick silicon nitride (SiN(x)) membranes. GNR conductance was monitored in situ during electron irradiation-induced nanopore formation inside a transmission electron microscope (TEM) operating at 200 kV. We show that GNR resistance increases linearly with electron dose and that GNR conductance and mobility decrease by a factor of 10 or more when GNRs are imaged at relatively high magnification with a broad beam prior to making a nanopore. By operating the TEM in scanning TEM (STEM) mode, in which the position of the converged electron beam can be controlled with high spatial precision via automated feedback, we were able to prevent electron beam-induced damage and make nanopores in highly conducting GNR sensors. This method minimizes the exposure of the GNRs to the beam before and during nanopore formation. The resulting GNRs with unchanged resistances after nanopore formation can sustain microampere currents at low voltages (∼50 mV) in buffered electrolyte solution and exhibit high sensitivity, with a large relative change of resistance upon changes of gate voltage, similar to pristine GNRs without nanopores.

  11. Electron beam induced surface activation of oxide surfaces for nanofabrication

    Energy Technology Data Exchange (ETDEWEB)

    Vollnhals, Florian; Seiler, Steffen; Walz, Marie-Madeleine; Steinrueck, Hans-Peter; Marbach, Hubertus [Lehrstuhl fuer Physikalische Chemie II and Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erlangen (Germany); Woolcot, Tom; Thornton, Geoff [London Centre for Nanotechnology and Department of Chemistry, University College London (United Kingdom)

    2012-07-01

    The controlled fabrication of structures on the nanoscale is a major challenge in science and engineering. Direct-write techniques like Electron Beam Induced Deposition (EBID) were shown to be suitable tools in this context. Recently, Electron Beam Induced Surface Activation (EBISA) has been introduced as a new focused electron beam technique. In EBISA, a surface, e.g. SiO{sub 2}, is irradiated by a focused electron beam, resulting in an activation of the exposed area. The activated area can then react and decompose precursor gases like iron pentacarbonyl, Fe(CO){sub 5}. This leads to a primary deposit, which continues to grow autocatalytically as long as Fe(CO){sub 5} is supplied, resulting in pure (> 90 % at.), crystalline iron nanostructures. We expand the use of this concept by exploring EBISA to produce metallic nanostructures on TiO{sub 2}(110) in UHV; atomistic insight into the process is obtained via Scanning Tunneling Microscopy (STM) and chemical insight via Auger Electron Spectroscopy (AES).

  12. Influence of Voltage Rise Time for Oxidation Treatment of NO in Simulated Exhausted Gas by Polarity-Reversed Pulse Discharge

    Science.gov (United States)

    Shinmoto, Kazuya; Kadowaki, Kazunori; Nishimoto, Sakae; Kitani, Isamu

    This paper describes experimental study on NO removal from a simulated exhausted-gas using repetitive surface discharge on a glass barrier subjected to polarity-reversed voltage pulses. The very fast polarity-reversal with a rise time of 20ns is caused by direct grounding of a charged coaxial cable of 10m in length. Influence of voltage rise time on energy efficiency for NO removal is studied. Results of NO removal using a barrier-type plasma reactor with screw-plane electrode system indicates that the energy efficiency for the very fast polarity reversal caused by direct grounding becomes higher than that for the slower polarity reversal caused by grounding through an inductor at the cable end. The energy efficiency for the direct grounding is about 80g/kWh for 50% NO removal ratio and is about 60g/kWh for 100% NO removal ratio. Very intense discharge light is observed at the initial time of 10ns for the fast polarity reversal, whereas the intensity in the initial discharge light for the slower polarity reversal is relatively small. To confirm the effectiveness of the polarity-reversed pulse application, comparison of the energy efficiency between the polarity-reversed voltage pulse and ac 60Hz voltage will be presented.

  13. The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

    Directory of Open Access Journals (Sweden)

    S.U. Urchuk

    2015-12-01

    Full Text Available In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.

  14. Pulsed Helium Ion Beam Induced Deposition: A Means to High Growth Rates

    Energy Technology Data Exchange (ETDEWEB)

    Alkemade, Paul F. A. [Delft University of Technology, Delft, Netherlands; Miro, Hozanna [Delft University of Technology, Delft, Netherlands; Van Veldhoven, Emile [TNO Van Leeuwenhoek Laboratory; Maas, Diederick [TNO Van Leeuwenhoek Laboratory; Smith, Daryl [University of Tennessee, Knoxville (UTK); Rack, P. D. [University of Tennessee, Knoxville (UTK)

    2011-01-01

    The sub-nanometer beam of a helium ion microscope was used to study and optimize helium-ion beam induced deposition of PtC nanopillars with the (CH{sub 3}){sub 3}Pt(CPCH{sub 3}) precursor. The beam current, beam dwell time, precursor refresh time, and beam focus have been independently varied. Continuous beam exposure resulted in narrow but short pillars, while pulsed exposure resulted in thinner and higher ones. Furthermore, at short dwell times the deposition efficiency was very high, especially for a defocused beam. Efficiencies were measured up to 20 times the value for continuous exposure conditions. The interpretation of the experimental data was aided by a Monte Carlo simulation of the deposition. The results indicate that two regimes are operational in ion beam induced deposition (IBID). In the first one, the adsorbed precursor molecules originally present in the beam interaction region decompose. After the original precursor layer is consumed, further depletion is averted and growth continues by the supply of molecules via adsorption and surface diffusion. Depletion around the beam impact site can be distinguished from depletion on the flanges of the growing pillars. The Monte Carlo simulations for low precursor surface coverage reproduce measured growth rates, but predict considerably narrower pillars, especially at short dwell times. Both the experiments and the simulations show that the pillar width rapidly increases with increasing beam diameter. Optimal writing strategy, good beam focusing, and rapid beam positioning are needed for efficient and precise fabrication of extended and complex nanostructures by He-IBID.

  15. Simulation of the Effects of Several Factors on Arc Plasma Behavior in Low Voltage Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Taking into account the properties of the arc plasma and the electromagnetic, heat and radiative phenomena, commercial computational fluid dynamics software PHOENICS has been adapted and modified to develop the three-dimensional magneto-hydrodynamic (MHD)model of arc in a low voltage circuit breaker. The effects of the arc ignition location, venting size and gassing material on arc behavior have been investigated. The analysis of the results show that the arc velocity accelerates with the increase in the distance between arc ignition location and of the venting size, and the existence of the gassing material is beneficial to improving the arc voltage and reducing the arc temperature.

  16. Modeling And Simulation of Speed and flux Estimator Based on Current & voltage Model

    Directory of Open Access Journals (Sweden)

    Dinesh Chandra Jain

    2011-10-01

    Full Text Available This paper introduce a estimator based on and current & voltage model used in induction motor (IM drive. The rotor speed estimation is based on the model reference adaptive system (MRAS approach. The closed loop control mechanism is based on the voltage and current model. The control and estimation algorithms utilize the synchronous coordinates as a frame of reference. A speed sensor less induction motor (IM drive with Robust control characteristics is introduced. First, a speed observation system, which is insensitive to the variations of motor parameters.

  17. Synthesis of nanowires via helium and neon focused ion beam induced deposition with the gas field ion microscope.

    Science.gov (United States)

    Wu, H M; Stern, L A; Chen, J H; Huth, M; Schwalb, C H; Winhold, M; Porrati, F; Gonzalez, C M; Timilsina, R; Rack, P D

    2013-05-03

    The ion beam induced nanoscale synthesis of platinum nanowires using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated using helium and neon ion beams in the gas field ion microscope. The He(+) beam induced deposition resembles material deposited by electron beam induced deposition with very small platinum nanocrystallites suspended in a carbonaceous matrix. The He(+) deposited material composition was estimated to be 16% Pt in a matrix of amorphous carbon with a large room-temperature resistivity (∼3.5 × 10(4)-2.2 × 10(5) μΩ cm) and temperature-dependent transport behavior consistent with a granular material in the weak intergrain tunnel coupling regime. The Ne(+) deposited material has comparable composition (17%), however a much lower room-temperature resistivity (∼600-3.0 × 10(3) μΩ cm) and temperature-dependent electrical behavior representative of strong intergrain coupling. The Ne(+) deposited nanostructure has larger platinum nanoparticles and is rationalized via Monte Carlo ion-solid simulations which show that the neon energy density deposited during growth is much larger due to the smaller ion range and is dominated by nuclear stopping relative to helium which has a larger range and is dominated by electronic stopping.

  18. Grid modeling, analysis and simulation of different scenarios for a smart low-voltage distribution grid

    DEFF Research Database (Denmark)

    Mihet-Popa, Lucian; Han, Xue; Bindner, Henrik W.

    2013-01-01

    , the number of cabinets and customers and the load per customer. The aim of the model is to design, implement and test the proposed configuration and to investigate whether the low-voltage distribution grid is prepared for the expected future increase of PV penetration, heat pumps and electric cars. The model...

  19. Simulation of Voltage Dip Event in Fixed-Speed Wind Turbines: Fatigue Evaluation

    DEFF Research Database (Denmark)

    Veluri, Badrinath; Santos-Martin, David; Jensen, Henrik Myhre

    2012-01-01

    transients affecting the fatigue life of drivetrain system due to voltage dips. A rainflow cycle counting method was developed to evaluate the fatigue life of the mechanical system. The methodology analyses the stress history and estimates the mean and amplitudes of the counted cycles, and time of duration...

  20. Beam-induced damage to the Tevatron components and what has been done about it

    Energy Technology Data Exchange (ETDEWEB)

    Mokhov, N.V.; Czarapata, P.C.; Drozhdin, A.I.; Still, D.A.; /Fermilab; Samulyak, R.V.; /Brookhaven

    2006-11-01

    A beam-induced damage to the Tevatron collimators happened in December 2003 was induced by a failure in the CDF Roman Pot detector positioning during the collider run. Possible scenarios of this failure resulted in an excessive halo generation and superconducting magnet quench have been studied via realistic simulations using the STRUCT and MARS14 codes. It is shown that the interaction of a misbehaved proton beam with the collimators result in a rapid local heating and a possible damage. A detailed consideration is given to the ablation process for the collimator material taking place in high vacuum. It is shown that ablation of tungsten (primary collimator) and stainless steel (secondary collimator) jaws results in creation of a groove in the jaw surface as was observed after the December's accident. The actions undertaken to avoid such an accident in future are described in detail.

  1. The Digital Simulation of Synchronous Motors Fed by Voltage-Source Inverters Over Wide Speed and Frequency Ranges

    Science.gov (United States)

    Rowihal, Said Soliman

    currents, and electromagnetic torque). Two start-up techniques are investigated: fixed-frequency fixed-voltage start-up and variable-frequency start-up with constant voltage per Hertz ratio (v/f) control. The second technique has valuable consequences because it relieves the stresses imposed on the inverter and the motor due to inrush currents encountered when the first technique is employed. Simulation results are obtained for both start-up techniques. To check the validity of the inverter model, the results are compared with those obtained when the motor is started from a conventional three-phase supply. (Abstract shortened with permission of author.).

  2. Ion beam induced luminescence analysis of painting pigments

    Energy Technology Data Exchange (ETDEWEB)

    Quaranta, A. [Universita di Trento, Dipartimento di Ingegneria dei Materiali e, delle Tecnologie Inustriali (DIMTI), via Mesiano 77, I-38050 Povo, Trento (Italy); Laboratori Nazionali di Legnaro - INFN, Via Universita 2, I-35020, Legnaro, Padova (Italy); E-mail: quaranta@ing.unitn.it; Salomon, J. [Centre de Recherche et de Restauration des Musees de France, CNRS UMR 171, rue des Pyramides, 75041 Paris Cedex 01 (France); Dran, J.C. [Centre de Recherche et de Restauration des Musees de France, CNRS UMR 171, rue des Pyramides, 75041 Paris Cedex 01 (France); Tonezzer, M. [Universita di Trento, Dipartimento di Ingegneria dei Materiali e, delle Tecnologie Inustriali (DIMTI), via Mesiano 77, I-38050 Povo, Trento (Italy); Laboratori Nazionali di Legnaro - INFN, Via Universita 2, I-35020, Legnaro, Padova (Italy); Della Mea, G. [Universita di Trento, Dipartimento di Ingegneria dei Materiali e, delle Tecnologie Inustriali (DIMTI), via Mesiano 77, I-38050 Povo, Trento (Italy); Laboratori Nazionali di Legnaro - INFN, Via Universita 2, I-35020, Legnaro, Padova (Italy)

    2007-01-15

    Ion beam induced luminescence (IBIL) has been exploited for the first time in the analysis of inorganic painting pigments. The elemental constituents of the different compounds have been determined by particle induced X-ray emission (PIXE). The acquisition time of each spectrum ranges from 100 ms to a few seconds, depending on the luminescence intensity. The luminescence features are fingerprints of the different compounds, thus identifying the provenience of pigments of the same nominal composition. Organic varnish layers do not affect the IBIL features, allowing the identification of pigments, like lapis-lazuli, whose identification with PIXE is hindered by the varnish. IBIL proved to be a technique complementary to PIXE in the archeometry and cultural heritage analysis fields.

  3. Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

    CERN Document Server

    Vittone, E; Olivero, P; Manfredotti, C; Jaksic, M; Giudice, A Lo; Fizzotti, F; Colombo, E

    2016-01-01

    The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers published so far in peer-reviewed journals. Its success stems from the valuable information IBIC can provide on charge transport phenomena occurring in finished devices, not easily obtainable by other analytical techniques. However, IBIC analysis requires a robust theoretical background to correctly interpret experimental data. In order to illustrate the importance of using a rigorous mathematical formalism, we present in this paper a benchmark IBIC experiment aimed to test the validity of the interpretative model based on the Gunn's theorem and to provide an example of the analytical capability of IBIC to characteriz...

  4. Alloying of metal nanoparticles by ion-beam induced sputtering

    Science.gov (United States)

    Magudapathy, P.; Srivastava, S. K.; Gangopadhyay, P.; Amirthapandian, S.; Saravanan, K.; Das, A.; Panigrahi, B. K.

    2017-01-01

    Ion-beam sputtering technique has been utilized for controlled synthesis of metal alloy nanoparticles of compositions that can be tuned. Analysis of various experimental results reveals the formation of Ag-Cu alloy nanoparticles on a silica substrate. Surface-plasmon optical resonance positions and observed shifts of Ag Bragg angles in X-ray diffraction pattern particularly confirm formation of alloy nanoparticles on glass samples. Sputtering induced nano-alloying mechanism has been discussed and compared with thermal mixing of Ag and Cu thin films on glass substrates. Compositions and sizes of alloy nanoparticles formed during ion-beam induced sputtering are found to exceed far from the values of thermal mixing.

  5. Electron-beam-induced deposition of gold from aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Schardein, G; Donev, E U; Hastings, J T, E-mail: hastings@engr.uky.edu [Department of Electrical and Computer Engineering and Center for Nanoscale Science and Engineering (CeNSE), University of Kentucky, Lexington, KY 40506 (United States)

    2011-01-07

    Focused electron-beam-induced deposition (EBID) using bulk liquid precursors is a novel approach to nanofabrication that has shown improvements in purity compared to EBID with gas-phase precursors. Here we report the first EBID of gold using bulk liquid precursors. We study the differences in gold deposited from three different aqueous solutions containing chloroauric acid (HAuCl{sub 4}), sodium tetrachloroaurate (NaAuCl{sub 4}), and the disulfitoaurate complex ([Au(SO{sub 3}){sub 2}]{sup 3-}). We also examine the dependence of threshold dose upon precursor concentration and demonstrate high-resolution patterning with a pitch as small as 50 nm. Finally, we show that the purity of gold deposited using these liquid precursors is significantly improved in comparison with deposits from metal-organic gaseous precursors.

  6. Ion beam induced luminescence characterisation of CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Gonon, P.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The characterisation of the band structure properties of materials and devices by ion microprobe techniques has been made possible at the Melbourne MeV ion microprobe facility with the development of Ion Beam Induced Luminescence (IBIL). A number of diamond films grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) on silicon substrates are analysed. A preliminary study of the luminescence properties of these samples has revealed information not previously obtainable via traditional microprobe techniques. The optical effects of incorporating dopants during the deposition process is determined using IBIL. The presence of trace element impurities introduced during growth is examined by Particle Induced X-ray Emission (PIXE), and a measurement of the film thickness is made using Rutherford Backscattering Spectrometry (RBS). 7 refs., 2 figs.

  7. Controlling electron beam-induced structure modifications and cation exchange in cadmium sulfide–copper sulfide heterostructured nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Haimei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Sadtler, Bryce; Habenicht, Carsten [Department of Chemistry, University of California, Berkeley, CA 94720 (United States); Freitag, Bert [FEI Company, P.O. Box 80066, KA 5600 Eindhoven (Netherlands); Alivisatos, A. Paul [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Chemistry, University of California, Berkeley, CA 94720 (United States); Kisielowski, Christian, E-mail: CFKisielowski@lbl.gov [National Center for Electron Microcopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Joint Center for Artificial Photosynthesis, Berkeley, CA 94720 (United States)

    2013-11-15

    The atomic structure and interfaces of CdS/Cu{sub 2}S heterostructured nanorods are investigated with the aberration-corrected TEAM 0.5 electron microscope operated at 80 kV and 300 kV applying in-line holography and complementary techniques. Cu{sub 2}S exhibits a low-chalcocite structure in pristine CdS/Cu{sub 2}S nanorods. Under electron beam irradiation the Cu{sub 2}S phase transforms into a high-chalcocite phase while the CdS phase maintains its wurtzite structure. Time-resolved experiments reveal that Cu{sup +}–Cd{sup 2+} cation exchange at the CdS/Cu{sub 2}S interfaces is stimulated by the electron beam and proceeds within an undisturbed and coherent sulfur sub-lattice. A variation of the electron beam current provides an efficient way to control and exploit such irreversible solid-state chemical processes that provide unique information about system dynamics at the atomic scale. Specifically, we show that the electron beam-induced copper–cadmium exchange is site specific and anisotropic. A resulting displacement of the CdS/Cu{sub 2}S interfaces caused by beam-induced cation interdiffusion equals within a factor of 3–10 previously reported Cu diffusion length measurements in heterostructured CdS/Cu{sub 2}S thin film solar cells with an activation energy of 0.96 eV. - Highlights: • Heterostructured nanorods were investigated at atomic resolution showing that they are free of extended defects. • Beam–sample interactions are controlled by current and voltage variations to provide pristine crystal structures. • Beam-induced migration of heterointerfaces are measured time-resolved and compared with Cu diffusion coefficients. • Beam–sample interaction overwrite possible signal improvements that can be expected by sample cooling.

  8. Partial Discharge Simulation for a High Voltage Transformer Winding using a Model based on Geometrical Dimensions

    OpenAIRE

    Abd Rahman, M S; L. Hao; Rapisarda, P.; Lewin, P L

    2012-01-01

    In high voltage plant, ageing processes can occur in the dielectric and insulation system which are totally unavoidable and ultimately limit the operational life of the plant. For example, these unwanted processes can cause partial discharge (PD) activity inside a transformer and the presence of this activity will lead to further ageing and degradation processes until eventually there is catastrophic failure. Therefore, partial discharge condition monitoring inside a transformer and along a t...

  9. Analysis and Estimation of Values of Currents and Voltages at the Disturbances in Induction Machine Using Tested Matlab Simulation

    Directory of Open Access Journals (Sweden)

    Nenad Marković

    2014-12-01

    Full Text Available The paper we presents mathematical model for analysis of transitional processes in three-phase induction motor, that is, wave forms of currents and voltages in time domain and phase coordinates. Model is suitable for relay protection of the motor from disturbances and for estimation of electrical energy quality in the distribution network. New constructions of induction motors present more progressive technical solutions comparing with classical variants and reliable entity only within selected system of protection from expected disturbances (failures and disorders followed by asymmetries. Measuring process is not required due to application of simulation in selected MATLAB package.

  10. Advanced simulation model for IPM motor drive with considering phase voltage and stator inductance

    Science.gov (United States)

    Lee, Dong-Myung; Park, Hyun-Jong; Lee, Ju

    2016-10-01

    This paper proposes an advanced simulation model of driving system for Interior Permanent Magnet (IPM) BrushLess Direct Current (BLDC) motors driven by 120-degree conduction method (two-phase conduction method, TPCM) that is widely used for sensorless control of BLDC motors. BLDC motors can be classified as SPM (Surface mounted Permanent Magnet) and IPM motors. Simulation model of driving system with SPM motors is simple due to the constant stator inductance regardless of the rotor position. Simulation models of SPM motor driving system have been proposed in many researches. On the other hand, simulation models for IPM driving system by graphic-based simulation tool such as Matlab/Simulink have not been proposed. Simulation study about driving system of IPMs with TPCM is complex because stator inductances of IPM vary with the rotor position, as permanent magnets are embedded in the rotor. To develop sensorless scheme or improve control performance, development of control algorithm through simulation study is essential, and the simulation model that accurately reflects the characteristic of IPM is required. Therefore, this paper presents the advanced simulation model of IPM driving system, which takes into account the unique characteristic of IPM due to the position-dependent inductances. The validity of the proposed simulation model is validated by comparison to experimental and simulation results using IPM with TPCM control scheme.

  11. Electron Beam Induced Artifacts During in situ TEM Deformation of Nanostructured Metals

    Science.gov (United States)

    Sarkar, Rohit; Rentenberger, Christian; Rajagopalan, Jagannathan

    2015-11-01

    A critical assumption underlying in situ transmission electron microscopy studies is that the electron beam (e-beam) exposure does not fundamentally alter the intrinsic deformation behavior of the materials being probed. Here, we show that e-beam exposure causes increased dislocation activation and marked stress relaxation in aluminum and gold films spanning a range of thicknesses (80-400 nanometers) and grain sizes (50-220 nanometers). Furthermore, the e-beam induces anomalous sample necking, which unusually depends more on the e-beam diameter than intensity. Notably, the stress relaxation in both aluminum and gold occurs at beam energies well below their damage thresholds. More remarkably, the stress relaxation and/or sample necking is significantly more pronounced at lower accelerating voltages (120 kV versus 200 kV) in both the metals. These observations in aluminum and gold, two metals with highly dissimilar atomic weights and properties, indicate that e-beam exposure can cause anomalous behavior in a broad spectrum of nanostructured materials, and simultaneously suggest a strategy to minimize such artifacts.

  12. Evaluation and Simulation of Black-box Arc Models for High-Voltage Circuit-Breakers

    OpenAIRE

    Gustavsson, Niklas

    2004-01-01

    The task for this Master thesis was to evaluate different black-box arc models for circuit-breakers with the purpose of finding criteria for the breaking ability. A black-box model is a model that requires no knowledge from the user of the underlying physical processes. Black-box arc models have been used in circuit-breaker development for many years. Arc voltages from tests made in the High Power Laboratory in Ludvika were used for validation, along with the resistance calculated at current ...

  13. Modelling and Simulation of the SVC for Power System Flow Studies: Electrical Network in voltage drop

    OpenAIRE

    Narimen Aouzellag LAHAÇANI; Boubekeur MENDIL

    2008-01-01

    The goal of any Flexible AC Transmission Systems (FACTS) devices study is to measure their impact on the state of the electrical networks into which they are introduced. Their principal function is to improve the static and dynamic properties of the electrical networks and that by increasing the margins of static and dynamic stability and to allow the power transit to the thermal limits of the lines.To study this impact, it is necessary to establish the state of the network (bus voltages and ...

  14. Design and simulation of the space vector modulation and applied to a load RL powered by a voltage inverter

    Directory of Open Access Journals (Sweden)

    Marouane El Azzaoui

    2016-07-01

    Full Text Available The vector control performance applied to rotating machines depends largely on static and dynamic characteristics of the inverter associated with it. The development of the pulse-width modulation (PWM provided greater flexibility in the control of the converters. The objective of this work is to construct a simplified and practical space vector modulation (SVM based on the selection of the sequence and the calculation of the conduction time or extinction. We have presented the blocks of the simulation vector modulation on the Matlab / Simulink with a new method for determining conduction time and analyzed its application on a load RL supplied by a voltage inverter. The performance of the proposed method has been presented by the simulation results.

  15. Simulation models developed for voltage control in a distribution network using energy storage systems for PV penetration

    DEFF Research Database (Denmark)

    Mihet-Popa, Lucian; Bindner, Henrik W.

    2013-01-01

    This paper presents the development of simulation models for DER components in a distribution network, with focus on voltage controllers using energy storage systems for PV penetration. The Vanadium Redox Battery (VRB) system model, used as an energy storage system, was implemented in MATLAB....../Simulink and DIgSILENT PowerFactory, based on the efficiency of different components-such as: cell stacks, electrolytes, pumps and power converters, whilst power losses were also taken into account. The simulation results have been validated against measurements using experimental facility of a distributed power...... system laboratory. To study the variability and the interaction between feeders including VRB, PV system and active units an overvoltage controller has also been developed, implemented and tested successfully....

  16. DC link current simulation of voltage source inverter with random space vector pulse width modulation

    Directory of Open Access Journals (Sweden)

    Chen Guoqiang

    2016-01-01

    Full Text Available Aiming at analysis complexity, a simulation model is built and presented to analyze and demonstrate the characteristics of the direct current (DC link current of the three-phase two-level inverter with the random space vector pulse width modulation (SVPWM strategy. The developing procedure and key subsystems of the simulation model are given in detail. Several experiments are done using the simulation model. The results verify the efficiency and convenience of the simulation model and show that the random SVPWM scheme, especially the random switching frequency scheme, can efficiently suppress the harmonic peaks of the DC link current.

  17. Simulation of the depletion voltage evolution of the ATLAS Pixel Detector

    CERN Document Server

    Beyer, Julien-christopher; The ATLAS collaboration

    2017-01-01

    The ATLAS Pixel detector has been operating since 2010 and consists of hybrid pixel modules where the sensitive elements are planar n-in-n sensors. In order to investigate and predict the evolution of the depletion voltage and of the leakage current in the different layers, a fully analytical implementation of the Hamburg model was derived. The parameters of the model, describing the dependence of the depletion voltage (U_depl) on fluence, temperature and time were tuned with a fit to the available measurements of Udepl in the last years of operation. A particular emphasis is put on the B-Layer, where the highest fluence has been accumulated up to now. A precise input of temperature and radiation dose is generated from the on-module temperature monitoring and the luminosity data. The analysis is then also extended to the Insertable B-Layer (IBL), installed at the end of Run-1, where we expect the fastest evolution of the radiation damage with luminosity, due to its closer position to the interaction point. Di...

  18. Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Guo, B.N.; Bouanani, M.E.; Duggan, J.L.; McDaniel, F.D. [Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Doyle, B.L.; Walsh, D.S. [Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185 (United States)] Aton, T.J. [Silicon Technology Development, Texas Instruments Inc., PO Box 650311, MS 3704, Dallas, Texas 75265 (United States)

    1999-06-01

    As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented. {copyright} {ital 1999 American Institute of Physics.}

  19. Hard- and software of real time simulation tools of Electric Power System for adequate modeling power semiconductors in voltage source convertor based HVDC and FACTS

    Directory of Open Access Journals (Sweden)

    Ufa Ruslan A.

    2014-01-01

    Full Text Available The motivation of the presented research is based on the needs for development of new methods and tools for adequate simulation of Flexible Alternating Current Transmission System (FACTS devices and High Voltage Direct Current Transmission (HVDC system as part of real electric power systems (EPS. For that, a hybrid approach for advanced simulation of the FACTS and HVDC based on Voltage Source is proposed. The presented simulation results of the developed hybrid model of VSC confirm the achievement of the desired properties of the model and the effectiveness of the proposed solutions.

  20. Initial operation of the LEDA beam-induced fluorescence diagnostic

    Science.gov (United States)

    Kamperschroer, James H.; Gilpatrick, J. Douglas; Gurd, Pamela A.; Madsen, David W.; Martinez, Derwin G.; O'Hara, James F.; Sage, Joan; Schaefer, Timothy L.; Shurter, R. Bradford; Stettler, Matthew W.

    2000-11-01

    A diagnostic based on beam-induced fluorescence has been developed and used to examine the expanded beam in the High-Energy Beam Transport (HEBT) section of the Low Energy Demonstration Accelerator (LEDA). The system consists of a camera, a gas injector, a spectrometer, and a control system. Gas is injected to provide a medium for the beam to excite, the camera captures the resulting image of the fluorescing gas, and the spectrometer measures the spectrum of the emitted light. EPICS was used to control the camera and acquire and store images. Data analysis is presently being performed offline. A Kodak DCS420m professional CCD camera is the primary component of the optical system. InterScience, Inc. modified the camera with the addition of a gain of 4000 image intensifier, thereby producing an intensified camera with a sensitivity of ˜0.5 milli-lux. Light is gathered with a 1″ format, 16-160 mm, Computar zoom lens. This lens is attached to the camera via a Century Precision Optics relay lens. Images obtained using only hydrogen from the beam stop exhibited features not yet understood. Images with good signal-to-noise ratio were obtained with the injection of sufficient nitrogen to raise the HEBT pressure to 2-8×10-6 torr. Two strong nitrogen lines, believed to be of the first negative group of N2+, were identified at 391 and 428 nm.

  1. Electron-Beam Induced Transformations of Layered Tin Dichalcogenides.

    Science.gov (United States)

    Sutter, E; Huang, Y; Komsa, H-P; Ghorbani-Asl, M; Krasheninnikov, A V; Sutter, P

    2016-07-13

    By combining high-resolution transmission electron microscopy and associated analytical methods with first-principles calculations, we study the behavior of layered tin dichalcogenides under electron beam irradiation. We demonstrate that the controllable removal of chalcogen atoms due to electron irradiation, at both room and elevated temperatures, gives rise to transformations in the atomic structure of Sn-S and Sn-Se systems so that new phases with different properties can be induced. In particular, rhombohedral layered SnS2 and SnSe2 can be transformed via electron beam induced loss of chalcogen atoms into highly anisotropic orthorhombic layered SnS and SnSe. A striking dependence of the layer orientation of the resulting SnS-parallel to the layers of ultrathin SnS2 starting material, but slanted for transformations of thicker few-layer SnS2-is rationalized by a transformation pathway in which vacancies group into ordered S-vacancy lines, which convert via a Sn2S3 intermediate to SnS. Absence of a stable Sn2Se3 intermediate precludes this pathway for the selenides, hence SnSe2 always transforms into basal plane oriented SnSe. Our results provide microscopic insights into the transformation mechanism and show how irradiation can be used to tune the properties of layered tin chalcogenides for applications in electronics, catalysis, or energy storage.

  2. Ion Beam Induced Charge analysis of diamond diodes

    Science.gov (United States)

    Lehnert, J.; Meijer, J.; Ronning, C.; Spemann, D.; Vittone, E.

    2017-08-01

    Diamond based p-i-n light-emitting diodes, developed to electrically drive single-photon sources in the visible spectral region at room temperature, have the potential to play a key role in quantum based technologies. In order to gain more insight into the charge injection mechanism occurring in these diodes, we carried out an experiment aimed to investigate the electrostatics and the charge carrier transport by the Ion Beam Induced Charge (IBIC) technique, using 1 MeV He microbeam raster scanning of p-i-n structures fabricated in a high purity diamond substrate, using lithographic masking and P and B ion implantation doping. Charge Collection Efficiency (CCE) maps obtained at low ion fluence, show that induced charge pulses arise only from the P-implanted region, whereas no IBIC signals arise from the B-implanted region. This result suggests the formation of a slightly p-type doped substrate, forming a n+-p-p+, rather than the expected p-i-n, structure. However, for high fluence scans of small areas covering the intrinsic gap, CCE maps are more uniform and compatible with a p-i-n structure, suggesting the occurrence of a ;priming effect;, which saturates acceptor levels resulting in a decrease of the effective doping of the diamond substrate.

  3. Beam induced vacuum measurement error in BEPC II

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    When the beam in BEPCII storage ring aborts suddenly, the measured pressure of cold cathode gauges and ion pumps will drop suddenly and decrease to the base pressure gradually. This shows that there is a beam induced positive error in the pressure measurement during beam operation. The error is the difference between measured and real pressures. Right after the beam aborts, the error will disappear immediately and the measured pressure will then be equal to real pressure. For one gauge, we can fit a non-linear pressure-time curve with its measured pressure data 20 seconds after a sudden beam abortion. From this negative exponential decay pumping-down curve, real pressure at the time when the beam starts aborting is extrapolated. With the data of several sudden beam abortions we have got the errors of that gauge in different beam currents and found that the error is directly proportional to the beam current, as expected. And a linear data-fitting gives the proportion coefficient of the equation, which we derived to evaluate the real pressure all the time when the beam with varied currents is on.

  4. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    Science.gov (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  5. Simulation of the Arc Behavior in Puffer-type High Voltage Circuit Breaker Considering the Influence of Nozzle Ablation

    Institute of Scientific and Technical Information of China (English)

    JIANG Xu; ZHONG Jianying; ZHANG Youpeng; ZHANG Gaochao; LI Xingwen; JIA Shenli

    2013-01-01

    In order to investigate the influence of nozzle ablation to arc,a 2 D axisymmetric magneto-hydro-dynamics arc model is developed to simulate the arc behavior during the whole interruption process in a puffer type high voltage circuit breaker,considering the nozzle ablating and the mixing process of Polytetrafluoroethylene(PTFE) vapor with SF6.The results show that the arc radius firstly increases and then decreases as arc current varies according to its sinusoida waveform.At 3.5 ms after arc initiation the nozzle ablation starts,and 2.5 ms later the current nearly reaches its peak value and nozzle ablation develops intensely.Meanwhile the nozzle is blocked by arc at this time and consequently the vapor concentration in nozzle reaches the highest.Then while the current decreasing and open distance increaseing the vapor concentration gradually decreases.Before current zero the extinction peak of arc voltage occurs.It indicates that the PTFE vapor enhances pressure rise in arc quenching chamber and strengthens the arc blocking effect on nozzle; the arc radius is wider and arc temperature is lower when nozzle ablation is considered.

  6. Modelling and Simulation of the SVC for Power System Flow Studies: Electrical Network in voltage drop

    Directory of Open Access Journals (Sweden)

    Narimen Aouzellag LAHAÇANI

    2008-12-01

    Full Text Available The goal of any Flexible AC Transmission Systems (FACTS devices study is to measure their impact on the state of the electrical networks into which they are introduced. Their principal function is to improve the static and dynamic properties of the electrical networks and that by increasing the margins of static and dynamic stability and to allow the power transit to the thermal limits of the lines.To study this impact, it is necessary to establish the state of the network (bus voltages and angles, powers injected and forwarded in the lines before and after the introduction of FACTS devices. This brings to calculate the powers transit by using an iterative method such as Newton-Raphson. Undertaking a calculation without the introduction of FACTS devices followed by a calculation with the modifications induced by the integration of FACTS devices into the network, makes it possible to compare the results obtained in both cases and thus assess the interest of the use of devices FACTS.

  7. Dynamic simulation and experimental study of inspection robot for high-voltage transmission-line

    Institute of Scientific and Technical Information of China (English)

    XIAO Xiao-hui; WU Gong-ping; DU E; SHI Tie-lin

    2005-01-01

    A mobile robot developed by Wuhan University for full-path hotline inspection on 220 kV transmission lines was presented. With 4 rotating joints and 2 translational ones, such robot is capable of traveling along non-obstacle straight-line segment and surmounting straight-line segment obstacles as well as transferring between two spans automatically. Lagrange's equations were utilized to derive dynamic equations of all the links, including items of inertia, coupling inertia, Coriolis acceleration, centripetal acceleration and gravity. And a dynamic response experiment on elemental motions of robot prototype's travelling along non-obstacle straight-line segment and surmounting obstacles was performed on 220 kV 1∶1 simulative overhanging transmission-line in laboratory. In addition, dynamic numerical simulation was conducted in the corresponding condition. Comparison and analysis on results of experiment and numerical simulation have validated theoretical model and simulation resolution. Therefore, the dynamic model formed hereunder can be used for the study of robot control.

  8. SIMULATION ANALYSIS ON PROPORTIONAL INTEGRAL AND DERIVATIVE CONTROL OF CLOSED LOOP DC MOTOR DRIVE WITH BIPOLAR VOLTAGE SWITCHING

    Directory of Open Access Journals (Sweden)

    P. Karpagavalli

    2013-01-01

    Full Text Available This study presents the performance of a new four quadrant single phase DC drive closed loop system controlled by proportional integral and derivative controller with Pulse Width Modulation (PWM full bridge DC-DC converter using bipolar voltage switching. The proposed method is found to be more efficient in improving the step response characteristics such as reducing the settling time, rise time, steady state error and maximum overshoot in speed response of the closed loop DC motor drive and also reduced total harmonics distortion in the AC line current when compared to open loop system. The proposed topologies were simulated using MATLAB/Simulink software package and the results were obtained.

  9. Focused electron beam induced deposition of magnetic nanostructures

    Science.gov (United States)

    de Teresa, Jose M.

    2011-03-01

    Nanopatterning strategies of magnetic materials normally rely on standard techniques such as electron-beam lithography using electron-sensitive resists. Focused electron beam induced deposition (FEBID) is currently being investigated as an alternative single-step route to produce functional magnetic nanostructures. Thus, Co-based and Fe-based precursors have been recently investigated for the growth of magnetic nanostructures by FEBID. In the present contribution, I will give an overview of the existing literature on magnetic nanostructures by FEBID and I will focus on the growth of Co nanostructures by FEBID using Co 2 (CO)8 as precursor gas. The Co content in the nanostructures can reach 95%. Magnetotransport experiments indicate that full metallic behaviour is displayed with relatively low residual resistivity and standard anisotropic magnetoresistance (0.8%). The coercive field of nanowires with changing aspect ratio has been determined in nanowires with width down to 150 nm by means of Magneto-optical Kerr Effect and the magnetization reversal has been imaged by means of Magnetic Force Microscopy, Scanning Transmission X-ray Microscopy as well as Lorentz Microscopy experiments. Nano-Hall probes have been grown with remarkable minimum detectable magnetic flux. Noticeably, it has been found that the domain-wall propagation field is lower than the domain-wall nucleation field in L-shaped nanowires, with potential applications in magnetic logic, sensing and storage. The spin polarization of these Co nanodeposits has been determined through Andreev-Reflection experiments in ferromagnetic-superconducting nanocontacts and amounts to 35%. Recent results obtained in Fe-based nanostructures by FEBID using Fe 2 (CO)9 precursor will be also presented. I acknowledge the collaboration in this field with A. Fernandez-Pacheco, R. Cordoba, L. Serrano, S. Sangiao, L.A. Rodriguez, C. Magen, E. Snoeck, L. Morellon, M.R. Ibarra.

  10. Device characterization and optimization of small molecule organic solar cells assisted by modelling simulation of the current-voltage characteristics.

    Science.gov (United States)

    Zuo, Yi; Wan, Xiangjian; Long, Guankui; Kan, Bin; Ni, Wang; Zhang, Hongtao; Chen, Yongsheng

    2015-07-15

    In order to understand the photovoltaic performance differences between the recently reported DR3TBTT-HD and DR3TBDT2T based solar cells, a modified two-diode model with Hecht equation was built to simulate the corresponding current-voltage characteristics. The simulation results reveal that the poor device performance of the DR3TBDTT-HD based device mainly originated from its insufficient charge transport ability, where an average current of 5.79 mA cm(-2) was lost through this pathway at the maximum power point for the DR3TBDTT-HD device, nearly three times as large as that of the DR3TBDT2T based device under the same device fabrication conditions. The morphology studies support these simulation results, in which both Raman and 2D-GIXD data reveal that DR3TBTT-HD based blend films exhibit lower crystallinity. Spin coating at low temperature was used to increase the crystallinity of DR3TBDTT-HD based blend films, and the average current loss through insufficient charge transport at maximum power point was suppressed to 2.08 mA cm(-2). As a result, the average experimental power conversion efficiency of DR3TBDTT-HD based solar cells increased by over 40%.

  11. Simulation of Five Phase Voltage Source Inverter with Different Excitation for Star Connected Load

    Directory of Open Access Journals (Sweden)

    M.A Inayathullaah

    2014-07-01

    Full Text Available In order to reduce the torque ripple and harmonics for smooth operation of the machine and to reduce the amount of heat generated the motor has to be supplied with multi phase supply greater than three phase supply. Selection of even number of phases should be avoided, because it decreases the performance of the motor as poles coincide with each other. So, Five Phase Supply is preferred. A five phase five leg 10 switch inverter fed five phase star connected load operating with five different excitation is simulated and compared with that of three phase conventional inverter.

  12. Simulative and experimental investigation on stator winding turn and unbalanced supply voltage fault diagnosis in induction motors using Artificial Neural Networks.

    Science.gov (United States)

    Lashkari, Negin; Poshtan, Javad; Azgomi, Hamid Fekri

    2015-11-01

    The three-phase shift between line current and phase voltage of induction motors can be used as an efficient fault indicator to detect and locate inter-turn stator short-circuit (ITSC) fault. However, unbalanced supply voltage is one of the contributing factors that inevitably affect stator currents and therefore the three-phase shift. Thus, it is necessary to propose a method that is able to identify whether the unbalance of three currents is caused by ITSC or supply voltage fault. This paper presents a feedforward multilayer-perceptron Neural Network (NN) trained by back propagation, based on monitoring negative sequence voltage and the three-phase shift. The data which are required for training and test NN are generated using simulated model of stator. The experimental results are presented to verify the superior accuracy of the proposed method.

  13. Plasma-chemical simulation of negative corona near the inception voltage

    Science.gov (United States)

    Pontiga, Francisco; Duran-Olivencia, Francisco J.; Castellanos, Antonio

    2013-09-01

    The spatiotemporal development of Trichel pulses in oxygen between a spherical electrode and a grounded plane has been simulated using a fluid approximation that incorporates the plasma chemistry of the electrical discharge. Elementary plasma processes, such as ionization, electron attachment, electron detachment, recombination between ions and chemical reactions between neutral species, are all included in a chemical model consisting of 55 reactions between 8 different species (electrons, O2+,O2-,O3-,O-, O2, O, O3). Secondary emission at the cathode by the impact of positive ions and photons is also considered. The spatial distribution of species is computed in three dimensions (2D-axysimmetrical) by solving Poisson's equation for the electric field and the continuity equations for the species, with the inclusion of the chemical gain/loss rate due to the particle interaction. The results of the simulation reveal the interplay between the different negative ions during the development of every Trichel pulse, and the rate of production of atomic oxygen and ozone by the corona discharge. This work was supported by the Consejeria de Innovacion, Ciencia y Empresa (Junta de Andalucia) and by the Ministerio de Ciencia e Innovacion, Spain, within the European Regional Development Fund contracts FQM-4983 and FIS2011-25161.

  14. Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

    Institute of Scientific and Technical Information of China (English)

    Junqin Zhang; Yintang Yang; Lifei Lou; Yan Zhao

    2008-01-01

    The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet pho-todetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the pho-tocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent wiU be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3 μm.

  15. Computer simulation and experimental study of transient processes in a single-phase voltage transformer

    Science.gov (United States)

    Kruzhaev, A. V.; Elagin, I. A.; Pavleino, M. A.; Dmitriev, V. A.; Chaly, A. M.

    2015-02-01

    We perform simulation and experimental investigation of transient processes emerging in a single-phase transformer when it is connected to the network. The transformer model constructed taking into account the saturation of the steel of the core differs from standard models in detailed accounting for the magnetic flux leakage, which is required, for example, for a correct description of inrush current. Universality of the model for the type of transformers under study is ensured by the allowance for eddy current losses and calculation of the magnetic hysteresis in the steel core. The latter makes it possible to estimate the effect of residual magnetization of the core on the form of a transient process, which is studied in detail. The methods for computing model parameters are described and its experimental verification is carried out.

  16. Beam-induced radiation in the compact muon solenoid tracker at the Large Hadron Collider

    Indian Academy of Sciences (India)

    A P Singh; P C Bhat; N V Mokhov; S Beri

    2010-05-01

    The intense radiation environment at the Large Hadron Collider, CERN at a design energy of $\\sqrt{s} = 14$ TeV and a luminosity of 1034 cm−2S−1 poses unprecedented challenges for safe operation and performance quality of the silicon tracker detectors in the CMS and ATLAS experiments. The silicon trackers are crucial for the physics at the LHC experiments, and the inner layers, being situated only a few centimeters from the interaction point, are most vulnerable to beam-induced radiation. We have recently carried out extensive Monte Carlo simulation studies using MARS program to estimate particle fluxes and radiation dose in the CMS silicon pixel and strip trackers from proton–proton collisions at $\\sqrt{s} = 14$ TeV and from machine-induced background such as beam–gas interactions and beam halo. We will present results on radiation dose, particle fluxes and spectra from these studies and discuss implications for radiation damage and performance of the CMS silicon tracker detectors.

  17. High response piezoelectric and piezoresistive materials for fast, low voltage switching: simulation and theory of transduction physics at the nanometer-scale.

    Science.gov (United States)

    Newns, Dennis M; Elmegreen, Bruce G; Liu, Xiao-Hu; Martyna, Glenn J

    2012-07-17

    Field effect transistors are reaching the limits imposed by the scaling of materials and the electrostatic gating physics underlying the device. In this Communication, a new type of switch based on different physics, which combines known piezoelectric and piezoresistive materials, is described and is shown by theory and simulation to achieve gigahertz digital switching at low voltage (0.1 V).

  18. Simulation of Reactive Power Imbalances in the Transmission Power Grid Threatened by the Problem of Voltage Instability

    OpenAIRE

    Robert Lis; Mirosław Łabuzek

    2013-01-01

    The reactive power balance in the transmission power grid depends on the reactive power produced by the power stations and the value generated by the capacitive power lines and static compensators. Reactive transmission losses become greater than shunt capacitive generation at the turning-point of voltage stability. Then lowering bus voltages drive EPS into voltage collapse point. The paper presents the balance of reactive power depending on the power demand growth, which is then used to esti...

  19. Simulations and Silicon Wafer Compatibility of a Voltage-Controlled Optical Switch Using ITO/NbOx

    Science.gov (United States)

    Burghardt, Kevin

    The story of optics and processing has always been on of silicon devices making strides faster and cheaper than optics. The idea of creating optical switches has been generally relegated to academic exercises or niche markets. This research takes a view of optical processing that is complimentary to silicon. Silicon wafers produce extremely dense, high quality devices but producing truly 3D integrated circuits has been a challenge. It would be advantageous to not need to bond wafers to create a 3D active structure. An argument for an optical switch that has a simple structure and uses industry established fabrication methods is given. The proposed switch uses the material indium tin oxide nanoparticles in niobum oxide glass (ITO/NbOx) as the active layer. The transmittance through this material is proportional to the electric field applied to it meaning the structure of a capacitor could be used to control it. It uses a metal for one plate of the capacitor and the ITO/NbOx as the other plate with the light running through ITO/NbO x plate. Each of the plates are separated from one another and surrounded by a dielectric material. Simulations show that silicon dioxide (SiO 2) can be used effectively to turn the ITO/NbOx into a light guide with a transmittance controllable using an applied voltage and that the proposed structure can be created using industry established wafer fabrication processes.

  20. Intense heavy ion beam-induced effects in carbon-based stripper foils

    Energy Technology Data Exchange (ETDEWEB)

    Kupka, Katharina

    2016-08-15

    -ray scattering (SAXS) were used. The changes of physical properties, in particular the electrical resistivity, thermal conductivity and stiffness of the foils were studied by in-situ 4-point probe, laser flash analysis and atomic force microscopy, respectively. A technique for measuring temperature of very thin, semitransparent and free-standing stripper foils during irradiation by means of an infrared (IR) camera was developed and applied. The experimental investigations were complemented by molecular dynamics simulations of amorphous carbon exposed to different swift heavy ions. The simulations provide information on the structural changes in the tracks at atomic scale. Virtual amorphous carbon cells were created by simulating liquid quenching and plasma deposition, yielding cells with different degrees of clustering of sp{sup 2} and sp{sup 3} bonding. The impacts of swift heavy ions were modeled by an instantaneous energy deposition deduced from inelastic thermal spike model calculations. Results of experiments and simulations provide evidence for the beam-induced transformation of amorphous carbon to a defected graphitic structure and for clustering of sp{sup 2} and sp{sup 3} bonds. These structural changes result in severe property changes. The electrical and thermal properties of amorphous carbon seem to improve during beam exposure, but the mechanical properties degrade severely. The beam conditions have a strong influence on the evolution of induced structure and property changes. A better understanding of the response of (amorphous) carbon stripper foils to swift heavy ion beams as revealed by dedicated irradiation and characterization experiments performed within this thesis, provides criteria for material requirements for future stripper foils used in high-power heavy ion accelerators such as FAIR.

  1. Focused Ion Beam Induced Effects on MOS Transistor Parameters

    Energy Technology Data Exchange (ETDEWEB)

    Abramo, Marsha T.; Antoniou, Nicholas; Campbell, Ann N.; Fleetwood, Daniel M.; Hembree, Charles E.; Jessing, Jeffrey R.; Soden, Jerry M.; Swanson, Scot E.; Tangyunyong, Paiboon; Vanderlinde, William E.

    1999-07-28

    We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

  2. Investigation of chemical vapour deposition diamond detectors by X- ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    CERN Document Server

    Olivero, P; Vittone, E; Fizzotti, F; Paolini, C; Lo Giudice, A; Barrett, R; Tucoulou, R

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the Large Hadron Collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro- beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitati...

  3. Analysis and simulation of the three-phase AC voltage regulation circuit%三相交流调压电路的分析与仿真

    Institute of Scientific and Technical Information of China (English)

    李衍孜

    2012-01-01

    Based on the analysis of the operation principle and mode of the single-phase AC voltage-regulation circuit, the voltage-regulating rule and effect of three-phase AC voltage-regulation was studied deeply in the paper. The theory of the three-phase star-style AC voltage-regulation circuit was tested in matlab/simulink, the simulation result proved the analysis of the theory of the three-phase AC voltage-regulation circuit was correct.%在分析单相交流调压电路运行原理和工作方式的基础上,深入研究了三相交流调压电路的调压规律和调压效果,并在Matlab/simulink仿真平台上对三相星形无中线交流调压电路的理论部分进行了验证,结果表明:三相交流调压电路的分析是正确的.

  4. Acetone and the precursor ligand acetylacetone : distinctly different electron beam induced decomposition?

    NARCIS (Netherlands)

    Warneke, Jonas; Van Dorp, Willem F.; Rudolf, Petra; Stano, Michal; Papp, Peter; Matejcik, Stefan; Borrmann, Tobias; Swiderek, Petra

    2015-01-01

    In focused electron beam induced deposition (FEBID) acetylacetone plays a role as a ligand in metal acetylacetonate complexes. As part of a larger effort to understand the chemical processes in FEBID, the electron-induced reactions of acetylacetone were studied both in condensed layers and in the ga

  5. Towards high purity nanostructures from electron beam induced deposition of platinum

    NARCIS (Netherlands)

    Botman, A.P.J.M.

    2009-01-01

    Electron beam induced deposition (EBID) is a novel nanofabrication technique allowing the rapid prototyping of three-dimensional nanodevices and the metallic wiring of nanostructures, and is a promising technique for many applications in nanoresearch. EBID is a process wherein a precursor molecule

  6. Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

    NARCIS (Netherlands)

    Botman, A.; Mulders, J.J.L.; Hagen, C.W.

    2009-01-01

    The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast ‘point-and-shoot’ creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One sig

  7. Charging effects during focused electron beam induced deposition of silicon oxide

    NARCIS (Netherlands)

    de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

    2011-01-01

    This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is attrib

  8. Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

    NARCIS (Netherlands)

    Chen, P.; Salemink, H.W.M.; Alkemade, P.F.A.

    2009-01-01

    The authors report the results of investigating two models for ion-beam-induced deposition (IBID). These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the ener

  9. Three-dimensional Nanostructures Fabricated by Ion-Beam-Induced Deposition

    NARCIS (Netherlands)

    Chen, P.

    2010-01-01

    The direct writing technology known as ion-beam-induced deposition (IBID) has been attracting attention mainly because of its high degree of flexibility of locally prototyping three-dimensional (3D) nanostructures. These high-resolution nanostructures have various research applications. However, no

  10. Multi-electron beam system for high resolution electron beam induced deposition

    NARCIS (Netherlands)

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm structure

  11. Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

    NARCIS (Netherlands)

    Gonzalez, Carlos M.; Timilsina, Rajendra; Li, Guoliang; Duscher, Gerd; Rack, Philip D.; Slingenbergh, Winand; van Dorp, Willem F.; De Hosson, Jeff T. M.; Klein, Kate L.; Wu, Huimeng M.; Stern, Lewis A.

    2014-01-01

    The gas field ion microscope was used to investigate helium and neon ion beam induced etching of nickel as a candidate technique for extreme ultraviolet (EUV) lithography mask editing. No discernable nickel etching was observed for room temperature helium exposures at 16 and 30 keV in the dose range

  12. Ultrahigh resolution focused electron beam induced processing : the effect of substrate thickness

    NARCIS (Netherlands)

    van Dorp, W. F.; Lazic, I.; Beyer, A.; Goelzhaeuser, A.; Wagner, J. B.; Hansen, T. W.; Hagen, C. W.

    2011-01-01

    It is often suggested that the growth in focused electron beam induced processing (FEBIP) is caused not only by primary electrons, but also (and even predominantly) by secondary electrons (SEs). If that is true, the growth rate for FEBIP can be changed by modifying the SE yield. Results from our Mon

  13. Substrate temperature and electron fluence effects on metallic films created by electron beam induced deposition

    NARCIS (Netherlands)

    Rosenberg, S.G.; Landheer, K.; Hagen, C.W.; Fairbrother, D.H.

    2012-01-01

    Using three different precursors [MeCpPtMe3, Pt(PF3)4, and W(CO)6], an ultra-high vacuum surface science approach has been used to identify and rationalize the effects of substrate temperature and electron fluence on the chemical composition and bonding in films created by electron beam induced

  14. Electron-beam-induced deposition of platinum at low landing energies

    NARCIS (Netherlands)

    Botman, A.; De Winter, D.A.M.; Mulders, J.J.L.

    2008-01-01

    Electron-beam-induced deposition of platinum from methylcyclopentadienyl-platinum-trimethyl was performed with a focused electron beam at low landing energies, down to 10 eV. The deposition growth rate is maximal at 140 eV, with the process being over ten times more efficient than at 20 kV. No signi

  15. Investigation of morphological changes in platinum-containing nanostructures created by electron-beam-induced deposition

    NARCIS (Netherlands)

    Botman, A.; Hesselberth, M.; Mulders, J.J.L.

    2008-01-01

    Focused electron-beam-induced deposition (EBID) allows the rapid fabrication of three-dimensional nanodevices and metallic wiring of nanostructures, and is a promising technique for many applications in nanoresearch. The authors present two topics on platinum-containing nanostructures created by EBI

  16. The role of electron-stimulated desorption in focused electron beam induced deposition

    NARCIS (Netherlands)

    van Dorp, Willem F.; Hansen, Thomas W.; Wagner, Jakob B.; De Hosson, Jeff T. M.

    2013-01-01

    We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)(6) is used as a precursor it is observed that the growth

  17. Electron beam induced electronic transport in alkyl amine-intercalated VOx nanotubes

    NARCIS (Netherlands)

    O'Dwyer, C.; Lavayen, V.; Clavijo-Cedeno, C.; Sotomayor Torres, C.M.

    2008-01-01

    The electron beam induced electronic transport in primary alkyl amine-intercalated V2O5 nanotubes is investigated where the organic amine molecules are employed as molecular conductive wires to an aminosilanized substrate surface and contacted to Au interdigitated electrode contacts. The results dem

  18. Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Berger, A; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Zhang, D; Clavel, R [Laboratory of Robotic Systems, Ecole Polytechnique Federale de Lausanne (EPFL), Station 9, CH-1015 Lausanne (Switzerland); Michler, J, E-mail: bjoern.eisenhawer@ipht-jena.de [Mechanics of Materials and Nanostructures Laboratory, EMPA-Materials Science and Technology, Feuerwerkstrasse 39, CH-3602 Thun (Switzerland)

    2011-02-18

    Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and highly doped silicon target material. p-n or p{sup ++}-p junctions located at the NW-silicon substrate interfaces were thus realized. To detect these junctions and visualize them the electron beam induced current technique and two-point probe current-voltage measurements were used, based on nanoprobing individual silicon NWs in a scanning electron microscope. Successful silicon NW doping by pulsed laser deposition of doped target material could experimentally be demonstrated. This doping strategy compared to the commonly used doping from the gas phase during chemical vapour deposition is evaluated essentially with a view to potentially overcoming the limitations of chemical vapour deposition doping, which shows doping inhomogeneities between the top and bottom of the NW as well as between the core and shell of NWs and structural lattice defects, especially when high doping levels are envisaged. The pulsed laser deposition doping technique yields homogeneously doped NWs and the doping level can be controlled by the choice of the target material. As a further benefit, this doping procedure does not require the use of poisonous gases and may be applied to grow not only silicon NWs but also other kinds of doped semiconductor NWs, e.g. group III nitrides or arsenides.

  19. Beam Induced Hydrodynamic Tunneling in the Future Circular Collider Components

    Science.gov (United States)

    Tahir, N. A.; Burkart, F.; Schmidt, R.; Shutov, A.; Wollmann, D.; Piriz, A. R.

    2016-08-01

    A future circular collider (FCC) has been proposed as a post-Large Hadron Collider accelerator, to explore particle physics in unprecedented energy ranges. The FCC is a circular collider in a tunnel with a circumference of 80-100 km. The FCC study puts an emphasis on proton-proton high-energy and electron-positron high-intensity frontier machines. A proton-electron interaction scenario is also examined. According to the nominal FCC parameters, each of the 50 TeV proton beams will carry an amount of 8.5 GJ energy that is equivalent to the kinetic energy of an Airbus A380 (560 t) at a typical speed of 850 km /h . Safety of operation with such extremely energetic beams is an important issue, as off-nominal beam loss can cause serious damage to the accelerator and detector components with a severe impact on the accelerator environment. In order to estimate the consequences of an accident with the full beam accidently deflected into equipment, we have carried out numerical simulations of interaction of a FCC beam with a solid copper target using an energy-deposition code (fluka) and a 2D hydrodynamic code (big2) iteratively. These simulations show that, although the penetration length of a single FCC proton and its shower in solid copper is about 1.5 m, the full FCC beam will penetrate up to about 350 m into the target because of the "hydrodynamic tunneling." These simulations also show that a significant part of the target is converted into high-energy-density matter. We also discuss this interesting aspect of this study.

  20. Argon ion beam induced surface pattern formation on Si

    Energy Technology Data Exchange (ETDEWEB)

    Hofsäss, H.; Bobes, O.; Zhang, K. [2nd Institute of Physics, Faculty of Physics, University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

    2016-01-21

    The development of self-organized surface patterns on Si due to noble gas ion irradiation has been studied extensively in the past. In particular, Ar ions are commonly used and the pattern formation was analyzed as function of ion incidence angle, ion fluence, and ion energies between 250 eV and 140 keV. Very few results exist for the energy regime between 1.5 keV and 10 keV and it appears that pattern formation is completely absent for these ion energies. In this work, we present experimental data on pattern formation for Ar ion irradiation between 1 keV and 10 keV and ion incidence angles between 50° and 75°. We confirm the absence of patterns at least for ion fluences up to 10{sup 18} ions/cm{sup 2}. Using the crater function formalism and Monte Carlo simulations, we calculate curvature coefficients of linear continuum models of pattern formation, taking into account contribution due to ion erosion and recoil redistribution. The calculations consider the recently introduced curvature dependence of the erosion crater function as well as the dynamic behavior of the thickness of the ion irradiated layer. Only when taking into account these additional contributions to the linear theory, our simulations clearly show that that pattern formation is strongly suppressed between about 1.5 keV and 10 keV, most pronounced at 3 keV. Furthermore, our simulations are now able to predict whether or not parallel oriented ripple patterns are formed, and in case of ripple formation the corresponding critical angles for the whole experimentally studied energies range between 250 eV and 140 keV.

  1. Simulation and Modeling of 24-Pulse STATCOM in EMTDC/PSCAD Program in Order to Regulate Voltage and Dynamic Stability Improvement

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available This study starts from the proof of Low Frequency Oscillation (LFO and then points out that there are many ways to study the LFO including its rejection measures. Also in this study one control system is planned in order to regulate voltage at common coupling point (PCC in where STATCOM is installed. This research present a single-machine infinite-bus system with one static synchronous compensator (STATCOM asymmetrically installed as a current source. Together with a classical generator model, the simplest power equation is obtained to give direct and clear physical concepts on synchronizing and damping torque factors. According to the primary equations, some basic issues, such as the relationship of voltage gain control and damping control, operating conditions, and the installation of STATCOM, are investigated in this research. Then, with assistance of proportional controller for voltage regulation and damp control, the digital simulation indicate the necessity of control of STATCOM in damping power system oscillations and supplying regulated voltage support.

  2. Comparing the magnetic resonant coupling radiofrequency stimulation to the traditional approaches: Ex-vivo tissue voltage measurement and electromagnetic simulation analysis

    Directory of Open Access Journals (Sweden)

    Sai Ho Yeung

    2015-09-01

    Full Text Available Recently, the design concept of magnetic resonant coupling has been adapted to electromagnetic therapy applications such as non-invasive radiofrequency (RF stimulation. This technique can significantly increase the electric field radiated from the magnetic coil at the stimulation target, and hence enhancing the current flowing through the nerve, thus enabling stimulation. In this paper, the developed magnetic resonant coupling (MRC stimulation, magnetic stimulation (MS and transcutaneous electrical nerve stimulation (TENS are compared. The differences between the MRC RF stimulation and other techniques are presented in terms of the operating mechanism, ex-vivo tissue voltage measurement and electromagnetic simulation analysis. The ev-vivo tissue voltage measurement experiment is performed on the compared devices based on measuring the voltage induced by electromagnetic induction at the tissue. The focusing effect, E field and voltage induced across the tissue, and the attenuation due to the increase of separation between the coil and the target are analyzed. The electromagnetic stimulation will also be performed to obtain the electric field and magnetic field distribution around the biological medium. The electric field intensity is proportional to the induced current and the magnetic field is corresponding to the electromagnetic induction across the biological medium. The comparison between the MRC RF stimulator and the MS and TENS devices revealed that the MRC RF stimulator has several advantages over the others for the applications of inducing current in the biological medium for stimulation purposes.

  3. Beam induced electron cloud resonances in dipole magnetic fields

    Science.gov (United States)

    Calvey, J. R.; Hartung, W.; Makita, J.; Venturini, M.

    2016-07-01

    The buildup of low energy electrons in an accelerator, known as electron cloud, can be severely detrimental to machine performance. Under certain beam conditions, the beam can become resonant with the cloud dynamics, accelerating the buildup of electrons. This paper will examine two such effects: multipacting resonances, in which the cloud development time is resonant with the bunch spacing, and cyclotron resonances, in which the cyclotron period of electrons in a magnetic field is a multiple of bunch spacing. Both resonances have been studied directly in dipole fields using retarding field analyzers installed in the Cornell Electron Storage Ring. These measurements are supported by both analytical models and computer simulations.

  4. Limits for Beam-Induced Damage: Reckless or too Cautious?

    CERN Document Server

    Bertarelli, A; Carra, F; Cerutti, F; Dallocchio, A; Mariani, N; Peroni, L; Scapin, M

    2011-01-01

    Accidental events implying direct beam impacts on collimators are of the utmost importance as they may lead to serious limitations of the overall LHC Performance. In order to assess damage threshold of components impacted by high energy density beams, entailing changes of phase and extreme pressures, state-of-the-art numerical simulation methods are required. In this paper, a review of the different dynamic response regimes induced by particle beams is given along with an indication of the most suited tools to treat each regime. Particular attention is paid to the most critical case, that of shock waves, for which standard Finite Element codes are totally unfit. A novel category of numerical tools, named Hydrocodes, has been adapted and used to analyse the consequences of an asynchronous beam abort on Phase 1 Tertiary Collimators (TCT). A number of simulations has been carried out with varying beam energy, number of bunches and bunch sizes allowing to identify different damage levels for the TCT up to catastr...

  5. Limits for Beam Induced Damage: Reckless or too Cautious?

    CERN Document Server

    Bertarelli, A; Carra, F; Cerutti, F; Dallocchio, A; Mariani, N; Peroni, L; Scapin, M

    2011-01-01

    Accidental events implying direct beam impacts on collimators are of the utmost importance as they may lead to serious limitations of the overall LHC Performance. In order to assess damage threshold of components impacted by high energy density beams, entailing changes of phase and extreme pressures, state-of-the-art numerical simulation methods are required. In this paper, a review of the different dynamic response regimes induced by particle beams is given along with an indication of the most suited tools to treat each regime. Particular attention is paid to the most critical case, that of shock waves, for which standard Finite Element codes are totally unfit. A novel category of numerical tools, named Hydrocodes, has been adapted and used to analyse the consequences of an asynchronous beam abort on Phase 1 Tertiary Collimators (TCT). A number of simulations has been carried out with varying beam energy, number of bunches and bunch sizes allowing to identify different damage levels for the TCT up to catastr...

  6. Modelling and simulation of double chamber microbial fuel cell. Cell voltage, power density and temperature variation with process parameters

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, Ravi; Mondal, Prasenjit; Chand, Shri [Indian Institute of Technology Roorkee, Uttaranchal (India). Dept. of Chemical Engineering

    2013-11-01

    In the present paper steady state models of a double chamber glucose glutamic acid microbial fuel cell (GGA-MFC) under continuous operation have been developed and solved using Matlab 2007 software. The experimental data reported in a recent literature has been used for the validation of the models. The present models give prediction on the cell voltage and cell power density with 19-44% errors, which is less (up to 20%) than the errors on the prediction of cell voltage made in some recent literature for the same MFC where the effects of the difference in pH and ionic conductivity between anodic and cathodic solutions on cell voltage were not incorporated in model equations. It also describes the changes in anodic and cathodic chamber temperature due to the increase in substrate concentration and cell current density. Temperature profile across the membrane thickness has also been studied. (orig.)

  7. Correlation Between Morphological Defects, Electron Beam Induced Current Imaging, and the Electrical Properties of 4H-SiC Schottky Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Wang,Y.; Ali, G.; Mikhov, M.; Vaidyanathan, V.; Skromme, B.; Raghothamachar, B.; Dudley, M.

    2005-01-01

    Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier height within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.

  8. Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Schäfer, N.; Baldaz, N.; Brunken, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Boit, C. [Technische Universität Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin (Germany)

    2015-07-15

    Electron-beam-induced current (EBIC) measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe{sub 2} solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe{sub 2}/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe{sub 2} layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w{sup 2} and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

  9. 压控电压源二阶低通有源滤波电路设计与仿真%Design and simulation of two-order voltage source low pass active filter circuit controlled by voltage

    Institute of Scientific and Technical Information of China (English)

    侯卫周; 谷城

    2014-01-01

    利用M ultisim10.1软件对压控电压源二阶低通滤波器进行仿真分析,通过选择不同信号源观察输入、输出波形的相位关系和幅值关系,比较输出、输入波形幅值比是否等于通带电压放大倍数;调节负反馈电阻大小,观察品质因素变化对滤波器幅频特性和相频特性的影响,得到的仿真的结果与实际理论分析基本一致。仿真结果表明,将M ultisim10.1合理地引入到模拟电子线路实验教学中,能将一些高深、抽象的电子电路的理论教学变得具体和生动,有利于学生对电路的认知,提高电子线路理论课的教学效果和教学质量。%The two-order low pass active filter circuit of voltage controlled voltage source has been analyzed and simulated by Multisim10 .1 software ,observed the phase-frequency and amplitude-frequency of output and input waveform via choosing different signal sources ,the output and input waveform amplitude ratio compared is equal to the pass band voltage amplification or not ;when by adjusting negative feedback resistance ,the influence of phase-frequency and amplitude-frequency characteristics as quality factors changing can be observed .The simulation results are consistent with the practical theory .It shows that reasonably introducing Multisim10 .1 simulation technology could make some abstract and advanced theoretical teaching become concretely and lively ,thus it is suitable for cultivating students’ cognitive view of circuit ,further can improve teaching effect and teaching quality of the Electronic Circuit Theory couse .

  10. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato

    2016-01-01

    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  11. Beam Induced Hydrodynamic Tunneling in the Future Circular Collider Components

    CERN Document Server

    AUTHOR|(CDS)2083092; Burkart, Florian; Schmidt, Rudiger; Shutov, A; Wollmann, Daniel; Piriz, A

    2016-01-01

    A future circular collider (FCC) has been proposed as a post-Large Hadron Collider accelerator, to explore particle physics in unprecedented energy ranges. The FCC is a circular collider in a tunnel with a circumference of 80–100 km. The FCC study puts an emphasis on proton-proton high-energy and electron-positron high-intensity frontier machines. A proton-electron interaction scenario is also examined. According to the nominal FCC parameters, each of the 50 TeV proton beams will carry an amount of 8.5 GJ energy that is equivalent to the kinetic energy of an Airbus A380 (560 t) at a typical speed of 850  km/h . Safety of operation with such extremely energetic beams is an important issue, as off-nominal beam loss can cause serious damage to the accelerator and detector components with a severe impact on the accelerator environment. In order to estimate the consequences of an accident with the full beam accidently deflected into equipment, we have carried out numerical simulations of interaction of a FCC...

  12. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar;

    2013-01-01

    problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0....

  13. Fault detection on the Large Hadron Collider at CERN: design, simulation and realization of a High Voltage Pulse Generator

    CERN Document Server

    Cavicchioli, C; Biagi, E; Bozzini, D

    2007-01-01

    This project was developed inside the Quality Assurance Plan (ELQA) of the LHC. The superconducting circuits of the collider show a great complexity concerning the control system, because of various reasons: the tunnel is placed around 50 to 175 m underground, the circuits work at temperatures of 1.9 K, all the structure should be perfectly aligned and the electronic part has considerable dimensions. To maximize the running time of the collider, it is necessary to develop methods for the diagnostic of defects and for the precise localization of the segment of the accelerator that contains the fault. From my studies it emerged that a possible way to localize electrical faults in the LHC superconducting circuits is to combine the use of time domain reflectometry methods and high voltage pulses. Therefore, I have designed and realized a high voltage pulse generator that will be an important instrument for the fault location among the accelerator.

  14. Efficient design and simulation of an expandable hybrid (wind-photovoltaic) power system with MPPT and inverter input voltage regulation features in compliance with electric grid requirements

    Energy Technology Data Exchange (ETDEWEB)

    Skretas, Sotirios B.; Papadopoulos, Demetrios P. [Electrical Machines Laboratory, Department of Electrical and Computer Engineering, Democritos University of Thrace (DUTH), 12 V. Sofias, 67100 Xanthi (Greece)

    2009-09-15

    In this paper an efficient design along with modeling and simulation of a transformer-less small-scale centralized DC - bus Grid Connected Hybrid (Wind-PV) power system for supplying electric power to a single phase of a three phase low voltage (LV) strong distribution grid are proposed and presented. The main components of the hybrid system are: a PV generator (PVG); and an array of horizontal-axis, fixed-pitch, small-size, variable-speed wind turbines (WTs) with direct-driven permanent magnet synchronous generator (PMSG) having an embedded uncontrolled bridge rectifier. An overview of the basic theory of such systems along with their modeling and simulation via Simulink/MATLAB software package are presented. An intelligent control method is applied to the proposed configuration to simultaneously achieve three desired goals: to extract maximum power from each hybrid power system component (PVG and WTs); to guarantee DC voltage regulation/stabilization at the input of the inverter; to transfer the total produced electric power to the electric grid, while fulfilling all necessary interconnection requirements. Finally, a practical case study is conducted for the purpose of fully evaluating a possible installation in a city site of Xanthi/Greece, and the practical results of the simulations are presented. (author)

  15. Radiation hardness of polysiloxane scintillators analyzed by ion beam induced luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Quaranta, A., E-mail: quaranta@ing.unitn.i [University of Trento, Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali - DIMTI, Via Mesiano 77, I-38050 Povo, Trento (Italy); INFN, Laboratori Nazionali di Legnaro, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Universita di Padova, Laboratori Nazionali di Legnaro, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy); Marchi, T.; Antonaci, A. [INFN, Laboratori Nazionali di Legnaro, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy); Scian, C. [Universita di Padova, Laboratori Nazionali di Legnaro, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy); Kravchuk, V.L. [Universita di Bologna, Dipartimento di Fisica, Viale Carlo Berti Pichat 6, I-40127 Bologna (Italy); Degerlier, M.; Gramegna, F. [INFN, Laboratori Nazionali di Legnaro, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy); Maggioni, G. [Universita di Padova, Laboratori Nazionali di Legnaro, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy)

    2010-10-01

    The radiation hardness of polysiloxane based scintillators has been measured by ion beam induced luminescence (IBIL). The light intensity as a function of the irradiation fluence with an He{sup +} beam at 1.8 MeV (1.0 {mu}A/cm{sup 2}) has been measured on undoped polymers synthesized with different amounts of phenyl units and on polysiloxanes doped with two different dye molecules (BBOT and Lumogen Violet) sensitizing the scintillation yield.

  16. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    OpenAIRE

    Brett B. Lewis; Stanford, Michael G.; Fowlkes, Jason D.; Kevin Lester; Harald Plank; Philip D. Rack

    2015-01-01

    Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled a...

  17. Multi-electron beam system for high resolution electron beam induced deposition

    OpenAIRE

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm structures after 2013, as described by the International Technology Roadmap for Semiconductors (ITRS), or can be used for rapid prototyping in research applications. The key point is to combine the throughp...

  18. Ion beam induced charge characterisation of a silicon microdosimeter using a heavy ion microprobe

    Science.gov (United States)

    Cornelius, Iwan; Siegele, Rainer; Rosenfeld, Anatoly B.; Cohen, David D.

    2002-05-01

    An ion beam induced charge (IBIC) facility has been added to the existing capabilities of the ANSTO heavy ion microprobe and the results of the first measurements are presented. Silicon on insulator (SOI) diode arrays with microscopic junction sizes have recently been proposed as microdosimeters for hadron therapy. A 20 MeV carbon beam was used to perform IBIC imaging of a 10 μm thick SOI device.

  19. ION-BEAM INDUCED GENERATION OF CU ADATOMS ON CU(100)

    NARCIS (Netherlands)

    BREEMAN, M; BOERMA, DO

    1992-01-01

    Low-energy ion scattering was used to study on-beam induced adatom generation during irradiation of a Cu(100) surface with 6 keV Ne ions at a sample temperature of 60 K. It was found that the number of adatoms produced per incoming ion decreases from an average of 3.5 to a saturation level of 1.8 af

  20. Structural refinement of the hERG1 pore and voltage-sensing domains with ROSETTA-membrane and molecular dynamics simulations.

    Science.gov (United States)

    Subbotina, Julia; Yarov-Yarovoy, Vladimir; Lees-Miller, James; Durdagi, Serdar; Guo, Jiqing; Duff, Henry J; Noskov, Sergei Yu

    2010-11-01

    The hERG1 gene (Kv11.1) encodes a voltage-gated potassium channel. Mutations in this gene lead to one form of the Long QT Syndrome (LQTS) in humans. Promiscuous binding of drugs to hERG1 is known to alter the structure/function of the channel leading to an acquired form of the LQTS. Expectably, creation and validation of reliable 3D model of the channel have been a key target in molecular cardiology and pharmacology for the last decade. Although many models were built, they all were limited to pore domain. In this work, a full model of the hERG1 channel is developed which includes all transmembrane segments. We tested a template-driven de-novo design with ROSETTA-membrane modeling using side-chain placements optimized by subsequent molecular dynamics (MD) simulations. Although backbone templates for the homology modeled parts of the pore and voltage sensors were based on the available structures of KvAP, Kv1.2 and Kv1.2-Kv2.1 chimera channels, the missing parts are modeled de-novo. The impact of several alignments on the structure of the S4 helix in the voltage-sensing domain was also tested. Herein, final models are evaluated for consistency to the reported structural elements discovered mainly on the basis of mutagenesis and electrophysiology. These structural elements include salt bridges and close contacts in the voltage-sensor domain; and the topology of the extracellular S5-pore linker compared with that established by toxin foot-printing and nuclear magnetic resonance studies. Implications of the refined hERG1 model to binding of blockers and channels activators (potent new ligands for channel activations) are discussed.

  1. Analyzing of Dynamic Voltage Restorer in Series Compensation Voltage

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a series-connected compensator to generate a controllable voltage to against the short-term voltage disturbances. The technique of DVR is an effective and cost competitive approach to improve voltage quality at the load side. This study presents a single-phase and threephase DVR system with reduced switch-count topology to protect the sensitive load against abnormal voltage conditions. Most basic function, the DVR configuration consist of a two level Voltage Source Converter (VSC, a dc energy storage device, a coupling transformer Connected in shunt with the ac system This study presents the application of Dynamic Voltage Restorer (DVR on power distribution systems for mitigation of voltage sag at critical loads. DVR is one of the compensating types of custom power devices. The DVR, which is based on forced-commutated Voltage Source Converter (VSC has been proved suitable for the task of compensating voltage sags/swells. Simulation results are presented to illustrate and understand the performances of DVR in supporting load voltages under voltage sags/swells conditions.

  2. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...... to guide these grid-connected distributed power generation systems. In order to verify the response of such systems for voltage disturbance, mainly for evaluation of voltage sags/dips, a Voltage Sag Generator (VSG) is needed. This paper evaluates such sag test devices according to IEC 61000 in order...... to provide cheaper solutions to test against voltage sags. Simulation and experimental results demonstrate that the shunt impedance based VSG solution is the easiest and cheapest one for laboratory test applications. The back-to-back fully controlled converter based VSG is the most flexible solution...

  3. Investigation of focused ion beam induced damage in single crystal diamond tools

    Energy Technology Data Exchange (ETDEWEB)

    Tong, Zhen [Centre for Precision Manufacturing, Department of Design, Manufacture & Engineering Management, University of Strathclyde, Glasgow G1 1XQ (United Kingdom); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Luo, Xichun, E-mail: Xichun.Luo@strath.ac.uk [Centre for Precision Manufacturing, Department of Design, Manufacture & Engineering Management, University of Strathclyde, Glasgow G1 1XQ (United Kingdom)

    2015-08-30

    Highlights: • The FIB-induced damage layer should be paid enough attention when shaping the cutting edges of nanoscale diamond tools. • During FIB processing cutting tools made of natural single crystal diamond, the Ga{sup +} collision will create a damage layer around tool tips. • The thicknesses of damaged layer and the level for amorphization of diamond significantly increase with beam energy. • The FIB-induced doping and defects during tool fabrication are responsible for the early detection of tool wear of nanoscale diamond tools. - Abstract: In this work, transmission electron microscope (TEM) measurements and molecular dynamics (MD) simulations were carried out to characterise the focused ion beam (FIB) induced damage layer in a single crystal diamond tool under different FIB processing voltages. The results obtained from the experiments and the simulations are in good agreement. The results indicate that during FIB processing cutting tools made of natural single crystal diamond, the energetic Ga{sup +} collision will create an impulse-dependent damage layer at the irradiated surface. For the tested beam voltages in a typical FIB system (from 8 kV to 30 kV), the thicknesses of the damaged layers formed on a diamond tool surface increased from 11.5 nm to 27.6 nm. The dynamic damage process of FIB irradiation and ion–solid interactions physics leading to processing defects in FIB milling were emulated by MD simulations. The research findings from this study provide the in-depth understanding of the wear of nanoscale multi-tip diamond tools considering the FIB irradiation induced doping and defects during the tool fabrication process.

  4. Simulation of current-voltage curves for inverted planar structure perovskite solar cells using equivalent circuit model with inductance

    Science.gov (United States)

    Cojocaru, Ludmila; Uchida, Satoshi; Jayaweera, Piyankarage V. V.; Kaneko, Shoji; Toyoshima, Yasutake; Nakazaki, Jotaro; Kubo, Takaya; Segawa, Hiroshi

    2017-02-01

    Physical modeling of hysteretic behavior in current-voltage (I-V) curves of perovskite solar cells (PSCs) is necessary for further improving their power conversion efficiencies (PCEs). The reduction of hysteresis in inverted planar structure PSCs (p-PSCs) has been achieved by using a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) layer. In the cases, the opposite trend of the I-V hysteresis has been observed where the forward scan shows slightly higher efficiency than the reverse scan. In this paper, an equivalent circuit model with inductance is proposed. This model consists of a Schottky diode involving a parasitic inductance focusing PCBM/Al(Ca) interface and accurately represents the opposite trend of the I-V hysteresis of the p-PSC with an inverted structure.

  5. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature

    Science.gov (United States)

    Mansilla, C.; Mehendale, S.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2016-10-01

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, ‘in situ’ purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for ‘in situ’ Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied.

  6. Ion Beam Induced Charge Collection (IBICC) from Integrated Circuit Test Structures Using a 10 MeV Carbon Microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Aton, T.J.; Doyle, B.L.; Duggan, J.L.; El Bouanani, M.; Guo, B.N.; McDaniel, F.D.; Renfrow, S.N.; Walsh, D.S.

    1998-11-18

    As future sizes of Integrated Circuits (ICs) continue to shrink the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICS. The IBICC measurements, conducted at the Sandia National Laboratories employed a 10 MeV carbon microbeam with 1pm diameter spot to scan test structures on specifically designed ICS. With the aid of layout information, an analysis of the charge collection efficiency from different test areas is presented. In the present work a 10 MeV Carbon high-resolution microbeam was used to demonstrate the differential charge collection efficiency in ICS with the aid of the IC design Information. When ions strike outside the FET, the charge was only measured on the outer ring, and decreased with strike distance from this diode. When ions directly strike the inner and ring diodes, the collected charge was localized to these diodes. The charge for ions striking the gate region was shared between the inner and ring diodes. I The IBICC measurements directly confirmed the interpretations made in the earlier work.

  7. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  8. Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Marchand, A.; El Hdiy, A.; Troyon, M. [Laboratoire de Recherche en Nanosciences, Bat. 6, case no 15, UFR Sciences, Universite de Reims Champagne Ardenne, 51687 Reims Cedex 2 (France); Amiard, G.; Ronda, A.; Berbezier, I. [IM2NP, Faculte des Sciences et Techniques, Campus de Saint Jerome - Case 142, Avenue Escadrille Normandie Niemen, 13397 Marseille Cedex 20 (France)

    2012-04-16

    Dynamics of hole storage in spherical Ge nanocrystals (NCs) formed by a two step dewetting/nucleation process on an oxide layer grown on an n-doped <001> silicon substrate is studied using a nano-electron beam induced current technique. Carrier generation is produced by an electron beam irradiation. The generated current is collected by an atomic force microscope--tip in contact mode at a fixed position away from the beam spot of about 0.5 {mu}m. This distance represents the effective diffusion length of holes. The time constants of holes charging are determined and the effect of the NC size is underlined.

  9. Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

    Energy Technology Data Exchange (ETDEWEB)

    Szkudlarek, Aleksandra [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland); AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Szmyt, Wojciech; Kapusta, Czeslaw [AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Utke, Ivo [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland)

    2014-12-15

    In this work, we review the single-adsorbate time-dependent continuum model for focused electron beam-induced deposition (FEBID). The differential equation for the adsorption rate will be expressed by dimensionless parameters describing the contributions of adsorption, desorption, dissociation, and the surface diffusion of the precursor adsorbates. The contributions are individually presented in order to elucidate their influence during variations in the electron beam exposure time. The findings are condensed into three new scaling laws for pulsed exposure FEBID (or FEB-induced etching) relating the lateral resolution of deposits or etch pits to surface diffusion and electron beam exposure dwell time for a given adsorbate depletion state. (orig.)

  10. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  11. Spectroscopic Evidence for Exceptional Thermal Contribution to Electron-Beam Induced Fragmentation

    Energy Technology Data Exchange (ETDEWEB)

    Caldwell, Marissa A.; Haynor, Ben; Aloni, Shaul; Ogletree, D. Frank; Wong, H.-S. Philip; Urban, Jeffrey J.; Milliron, Delia J.

    2010-11-16

    While electron beam induced fragmentation (EBIF) has been reported to result in the formation of nanocrystals of various compositions, the physical forces driving this phenomenon are still poorly understood. We report EBIF to be a much more general phenomenon than previously appreciated, operative across a wide variety of metals, semiconductors and insulators. In addition, we leverage the temperature dependent bandgap of several semiconductors to quantify -- using in situ cathodoluminescence spectroscopy -- the thermal contribution to EBIF, and find extreme temperature rises upwards of 1000K.

  12. Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations

    Science.gov (United States)

    Jo, Yeong-Deuk; Koh, Jung-Hyuk; Ha, Jae-Geun; Kim, Ji-Hong; Cho, Dae-Hyung; Moon, Byung-Moo; Koo, Sang-Mo

    2009-12-01

    Au/SiO2/n-Si metal-oxide-silicon-on-insulator (MOSOI) capacitors were fabricated to study the damage caused by reactive ion etching (RIE) on (1 1 0) oriented silicon-on-insulator (SOI) substrates. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measurements revealed that C-V curves significantly change and a negative voltage shift occurs for plasma-damaged capacitors. The simulated band diagram profiles and potential distribution of the corresponding structures indicate that the C-V shift is mainly due to the removal of a parasitic depletion capacitance (Cp) in the substrate, when the interface charges (Qf) are present at the gate oxide/SOI interface. For etch-damaged MOSOI samples, the surface roughness and the interface charges (Qf) have been found to increase by ~1.94 × 1012 cm-2 with respect to the reference devices, whereas the increase was reduced for sacrificial-oxidation treated samples, which implies a recovery from the plasma-induced etch damage on SOI structures.

  13. Voltage Swells Improvement in Low Voltage Network Using Dynamic Voltage Restorer

    Directory of Open Access Journals (Sweden)

    R. Omar

    2011-01-01

    Full Text Available Problem statement: Voltage disturbances are the most common power quality problem due to the increased use of a large numbers of sophisticated electronic equipment in industrial distribution system. The voltage disturbances such as voltage sags, swells, harmonics, unbalance and flickers. High quality in the power supply is needed, since failures due to such disturbances usually have a high impact on production cost. There are many different solutions to compensate voltage disturbances but the use of a DVR is considered to be the most cost effective method. The objective of this study is to propose a new topology of a DVR in order to mitigate voltage swells using a powerful power custom device namely the Dynamic Voltage Restorer (DVR. Approach: New configuration of a DVR with an improvement of a controller based on direct-quadrature-zero method has been introduced to compensate voltage swells in the network. Results: The effectiveness of the DVR with its controller were verify using Matlab/Simulinks SimPower Toolbox and then implemented using 5KVA DVR experimental setup. Simulations and experimental results demonstrate the effective dynamic performance of the proposed configuration. Conclusion: The implimentation of the proposed DVR validate the capabilities in mitigating of voltage swells effectiveness.During voltage swells, the DVR injects an appropriate voltage to maintain the load voltage at its nominal value.

  14. Electrical characterization of electron beam induced damage on sub-10 nm n-channel MOS transistors using nano-probing technique

    Science.gov (United States)

    Kang, Jonghyuk; Lee, Sungho; Choi, Byoungdeog

    2016-11-01

    Electron beam induced damage on sub-10 nm n-channel MOS transistors was evaluated using an atomic force microscopy-based nano-probing technique. After electron beam irradiation, all the device parameters shifted including threshold voltage (V th), saturation current, sub-threshold slope and transistor leakage current. A negative shift in V th occurred at low electron beam acceleration voltage (V acc) because of the increase in oxide trapped holes generated by excited plasmons. At high V acc, however, a positive V th shift was observed because of an increased contribution of interface trap generation caused by the deeper electron penetration depth. In addition, interface trap generation not only degraded the sub-threshold slope due to the additional capacitance from the generated interface traps, but also increased transistor leakage current due to changes in junction characteristics. Our studies show that it is critical to avoid electron beam exposure before electrical characterization on sub-10 nm devices even in the range of less than 1.0 kV of V acc using nano-probe systems.

  15. Origin of the Difference in the Resistivity of As-Grown Focused-Ion- and Focused-Electron-Beam-Induced Pt Nanodeposits

    Directory of Open Access Journals (Sweden)

    J. M. De Teresa

    2009-01-01

    Full Text Available We study the origin of the strong difference in the resistivity of focused-electron- and focused-Ga-ion-beam-induced deposition (FEBID and FIBID, resp. of Pt performed in a dual beam equipment using (CH33Pt(CpCH3 as the precursor gas. We have performed in-situ and ex-situ resistance measurements in both types of nanodeposits, finding that the resistivity of Pt by FEBID is typically four orders of magnitude higher than Pt by FIBID. In the case of Pt by FEBID, the current-versus-voltage dependence is nonlinear and the resistance-versus-temperature behavior is strongly semiconducting, whereas Pt by FIBID shows linear current-versus-voltage dependence and only slight temperature dependence. The microstructure, as investigated by high-resolution transmission electron microscopy, consists in all cases of Pt single crystals with size about 3 nm embedded in an amorphous carbonaceous matrix. Due to the semiconducting character of the carbon matrix, which is the main component of the deposit, we propose that the transport results can be mapped onto those obtained in semiconducting materials with different degrees of doping. The different transport properties of Pt by FEBID and FIBID are attributed to the higher doping level in the case of FIBID, as given by composition measurements obtained with energy-dispersive X-ray microanalysis.

  16. Plasma density enhancement in atmospheric-pressure dielectric-barrier discharges by high-voltage nanosecond pulse in the pulse-on period: a PIC simulation

    Science.gov (United States)

    Sang, Chaofeng; Sun, Jizhong; Wang, Dezhen

    2010-02-01

    A particle-in-cell (PIC) plus Monte Carlo collision simulation is employed to investigate how a sustainable atmospheric pressure single dielectric-barrier discharge responds to a high-voltage nanosecond pulse (HVNP) further applied to the metal electrode. The results show that the HVNP can significantly increase the plasma density in the pulse-on period. The ion-induced secondary electrons can give rise to avalanche ionization in the positive sheath, which widens the discharge region and enhances the plasma density drastically. However, the plasma density stops increasing as the applied pulse lasts over certain time; therefore, lengthening the pulse duration alone cannot improve the discharge efficiency further. Physical reasons for these phenomena are then discussed.

  17. Simulations of atmospheric pressure discharge in a high-voltage nanosecond pulse using the particle-in-cell Monte Carlo collision model in noble gases

    Science.gov (United States)

    Shi, Feng; Wang, Dezhen; Ren, Chunsheng

    2008-06-01

    Atmospheric pressure discharge nonequilibrium plasmas have been applied to plasma processing with modern technology. Simulations of discharge in pure Ar and pure He gases at one atmospheric pressure by a high voltage trapezoidal nanosecond pulse have been performed using a one-dimensional particle-in-cell Monte Carlo collision (PIC-MCC) model coupled with a renormalization and weighting procedure (mapping algorithm). Numerical results show that the characteristics of discharge in both inert gases are very similar. There exist the effects of local reverse field and double-peak distributions of charged particles' density. The electron and ion energy distribution functions are also observed, and the discharge is concluded in the view of ionization avalanche in number. Furthermore, the independence of total current density is a function of time, but not of position.

  18. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate vario...... power quality disturbances, such as interruptions, sags and imbalances. Simulation studies have been performed. The effectiveness of the proposed method has been demonstrated under the simulated typical power disturbances....

  19. Ion beam induced luminescence of germano-silicate optical fiber preform

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hyunkyu; Kim, Jongyeol; Lee, Namho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Youngwoong; Han, Wontaek [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Markovic, Nikola; Jaksic, Milko [Ruder Boskovic Institute, Zagred (Croatia)

    2014-05-15

    When an optical fiber is exposed to radiation, the attenuation (RIA, Radiation Induced Attenuation) in the optical fiber (OF) is increased because of the color centers which deteriorate the transmission property and generate the absorption loss. In order to understand the radiation induced defect, Ion Beam induced luminescence (IBIL) was introduced to investigate it. IBIL technique is to analyze IR/VIS/UV luminescence related to ion beam interaction with outer shell electrons involved in chemical bonds and structure defects of target atoms. So IBIL is sensitive to its chemical composition and has been used in analysis of material characterization, geological samples and cultural heritage objects. In silica material, four O atoms are surrounding one Si atom in tetrahedral coordination. In this study, the influence of Copper (Cu) and Cerium (Ce) dopants to germano silica core optical fibers were investigated under proton irradiation at RBI using Ion Beam induced luminescence (IBIL) method. To understand the radiation induced defect of optical fibers, IBIL were tested to a germano-silica core fiber under 2 MeV proton irradiation. Although a Cu or Ce dopant was not detected by IBIL technique, the relation between the amount of radiation and luminescence can be established. This experiment showed a potential technique of studying the effects and behavior of additive elements for silica core fiber. To increase the radiation resistance of optical fibers, further investigations are needed, i. e. the proper additives and its contents and an interaction mechanism between Ge-related defects and additives.

  20. Electron-beam induced deposition and autocatalytic decomposition of Co(CO3NO

    Directory of Open Access Journals (Sweden)

    Florian Vollnhals

    2014-07-01

    Full Text Available The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID and electron beam-induced surface activation (EBISA is studied for two precursors: iron pentacarbonyl, Fe(CO5, and cobalt tricarbonyl nitrosyl, Co(CO3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM and scanning transmission X-ray microscopy (STXM, including near edge X-ray absorption fine structure (NEXAFS spectroscopy. It has previously been shown that Fe(CO5 decomposes autocatalytically on Fe seed layers (EBID and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO3NO and compare it to results obtained from Fe(CO5. Co(CO3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  1. Beam-Induced Multipactoring and Electron-Cloud Effects in Particle Accelerators

    CERN Document Server

    Caspers, Friedhelm; Scandale, Walter; Zimmermann, F

    2009-01-01

    In the beam pipe of high-energy proton or positron accelerators an “electron cloud” can be generated by a variety of processes, e.g. by residual-gas ionization, by photoemission from synchrotron radiation, and, most importantly, by secondary emission via a beam-induced multipactoring process. The electron cloud commonly leads to a degradation of the beam vacuum by several orders of magnitude, to fast beam instabilities, to beam-size increases, and to fast or slow beam losses. At the Large Hadron Collider (LHC), the cloud electrons could also give rise to an additional heat load inside cold superconducting magnets. In addition to the direct heat deposition from incoherently moving electrons, a potential “magnetron effect” has been conjectured, where electrons would radiate coherently when moving in a strong magnetic field under the simultaneous influence of a beam-induced electric “wake” field that may become resonant with the cyclotron frequency. Electron-cloud effects are already being observed w...

  2. Electron beam induced synthesis of uranium dioxide nanoparticles: Effect of solvent composition

    Science.gov (United States)

    Rath, M. C.; Keny, S. J.; Naik, D. B.

    2016-09-01

    The effect of various compositions of solvents was investigated on the electron beam induced synthesis of uranium dioxide, UO2 nanoparticles. The synthesis was carried out at different pHs from 2 to 7 in the aqueous solutions containing 10 mM uranyl nitrate and 10% 2-propanol. The formation of UO2 nanoparticles was found to occur only in the pH range from 2.5 to 3.7. Experiments were also carried out in the aqueous solutions containing various other alcohols (10% v/v) such as methanol, ethanol, 1-propanol, 1-butanol or tert-butanol as well as in solutions containing 10 mM sodium formate at pH 3.4. The formation of UO2 nanoparticles in the aqueous solutions was found to occur only in the presence of ethanol, 1-propanol, 2-propanol or 1-butanol. It is therefore confirmed that the electron beam induced synthesis of UO2 nanoparticles strongly depends on the solvent compositions as well as the pH of the medium.

  3. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO

    Science.gov (United States)

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter

    2014-01-01

    Summary The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures. PMID:25161851

  4. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO.

    Science.gov (United States)

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter; Marbach, Hubertus

    2014-01-01

    The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  5. Ion-beam induced atomic mixing in isotopically controlled silicon multilayers

    Science.gov (United States)

    Radek, M.; Bracht, H.; Liedke, B.; Böttger, R.; Posselt, M.

    2016-11-01

    Implantation of germanium (Ge), gallium (Ga), and arsenic (As) into crystalline and preamorphized isotopically controlled silicon (Si) multilayer structures at temperatures between 153 K and 973 K was performed to study the mechanisms mediating ion-beam induced atomic mixing. Secondary-ion-mass-spectrometry was applied to determine concentration-depth profiles of the stable isotopes before and after ion implantation. The intermixing is analytically described by a depth-dependent displacement function. The maximum displacement is found to depend not only on temperature and microstructure but also on the doping type of the implanted ion. Molecular dynamics calculations evaluate the contribution of cascade mixing, i.e., thermal-spike mixing, to the overall observed atomic mixing. Calculated and experimental results on the temperature dependence of ion-beam mixing in the amorphous and crystalline structures provide strong evidence for ion-beam induced enhanced crystallization and enhanced self-diffusion, respectively. On the other hand, the former process is confirmed by channeling Rutherford backscattering analyses of the amorphous layer thickness remaining after implantation, the latter process is consistently attributed to the formation of highly mobile Si di-interstitials formed under irradiation and in the course of damage annealing. The observed ion-beam mixing in Si is compared to recent results on ion-beam mixing of Ge isotope multilayers that, in contrast to Si, are fully described by thermal-spike mixing only.

  6. In situ growth optimization in focused electron-beam induced deposition

    Directory of Open Access Journals (Sweden)

    Paul M. Weirich

    2013-12-01

    Full Text Available We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID. It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me3. For W(CO6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

  7. Simulation of the Process of Arc Energy-Effect in High Voltage Auto-Expansion SF6 Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    Rong Mingzhe; Yang Qian; Fan Chunduo

    2005-01-01

    A new magnetic hydro-dynamics (MHD) model of arc in H.V. auto-expansion SF6circuit breaker that takes into consideration nozzle ablation due to both radiation and thermal conduction is presented in this paper. The effect of PTFE (polytetrafluorethylene) vapor is considered in the mass, momentum and energy conservation equations of the constructed model. Then,the gas flow fields with and without conduction considered are simulated. By comparing the aforementioned two results, it is indicated that the arc's maximal temperature with conduction considered is 90 percent of that without considering conduction.

  8. Voltage-Sensitive Load Controllers for Voltage Regulation and Increased Load Factor in Distribution Systems

    DEFF Research Database (Denmark)

    Douglass, Philip James; Garcia-Valle, Rodrigo; Østergaard, Jacob

    2014-01-01

    consumption which can be mapped to temperature setpoint offsets of thermostat controlled loads. In networks where a lower voltage level corresponds to high system load (and vice versa), this controller acts to regulate voltage and increase the load factor. Simulations are conducted on low- and medium-voltage......This paper presents a novel controller design for controlling appliances based on local measurements of voltage. The controller finds the normalized voltage deviation accounting for the sensitivity of voltage measurements to appliance state. The controller produces a signal indicating desired power...... distribution systems with residential loads including voltage-sensitive water heaters. In low-voltage systems, the results of the simulations show the controller to be effective at reducing the extremes of voltage and increasing the load factor while respecting end-use temperature constraints. In medium-voltage...

  9. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    Science.gov (United States)

    Xu, Hao; Yang, Hong; Wang, Yan-Rong; Wang, Wen-Wu; Luo, Wei-Chun; Qi, Lu-Wei; Li, Jun-Feng; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope β and percolation factor s, each could be expressed as a function of trap density time exponent α. Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  10. Docking Simulation of the Binding Interactions of Saxitoxin Analogs Produced by the Marine Dinoflagellate Gymnodinium catenatum to the Voltage-Gated Sodium Channel Nav1.4

    Directory of Open Access Journals (Sweden)

    Lorena M. Durán-Riveroll

    2016-05-01

    Full Text Available Saxitoxin (STX and its analogs are paralytic alkaloid neurotoxins that block the voltage-gated sodium channel pore (Nav, impeding passage of Na+ ions into the intracellular space, and thereby preventing the action potential in the peripheral nervous system and skeletal muscle. The marine dinoflagellate Gymnodinium catenatum produces an array of such toxins, including the recently discovered benzoyl analogs, for which the mammalian toxicities are essentially unknown. We subjected STX and its analogs to a theoretical docking simulation based upon two alternative tri-dimensional models of the Nav1.4 to find a relationship between the binding properties and the known mammalian toxicity of selected STX analogs. We inferred hypothetical toxicities for the benzoyl analogs from the modeled values. We demonstrate that these toxins exhibit different binding modes with similar free binding energies and that these alternative binding modes are equally probable. We propose that the principal binding that governs ligand recognition is mediated by electrostatic interactions. Our simulation constitutes the first in silico modeling study on benzoyl-type paralytic toxins and provides an approach towards a better understanding of the mode of action of STX and its analogs.

  11. 三相电压型PWM整流器的仿真与实验研究%Study of Three-phase PWM Voltage Rectifier's Simulation and Experiment

    Institute of Scientific and Technical Information of China (English)

    赵建勇; 王清灵; 芮秀凤; 刘军华

    2011-01-01

    The paper analyzed the three-phase PWM rectifier's basic principle, and built mathematical model under the three-phase static coordinate axis and rotating coordinate axis. It adopted the closed loop control technology of voltage and circuit, and the control technology of space voltage vector to make up the control system, and studied the influence of variation in load to the system and the principle of energy reversible in rectifier. Finally, it validated the system through the matlab/simulink, and built the experiment system based on TMS2812-DSP. Both the simulation and experiment verify the system has good dynamic and static performance, and nearly to be unit power factor.%分析了三相PWM整流器基本原理,建立了在三相静止坐标系以及两相旋转坐标系中的数学模型.采用电压电流双闭环控制以及空间电压矢量PWM技术构建了控制系统,探究了负载变化对系统的影响,以及整流器能量可逆的原理.最后通过Matlab/Simulink仿真进行了验证,并搭建了基于TMS2812-DSP的实验平台.仿真及实验结果均表明系统具有良好的动、静态性能,且功率因数接近为1.

  12. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  13. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Science.gov (United States)

    Lewis, Brett B; Stanford, Michael G; Fowlkes, Jason D; Lester, Kevin; Plank, Harald

    2015-01-01

    Summary Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention. PMID:25977862

  14. Solar cell evaluation using electron beam induced current with the large chamber scanning electron microscope

    Science.gov (United States)

    Wink, Tara; Kintzel, Edward; Marienhoff, Peter; Klein, Martin

    2012-02-01

    An initial study using electron beam induced current (EBIC) to evaluate solar cells has been carried out with the large chamber scanning electron microscope (LC-SEM) at the Western Kentucky University Nondestructive Analysis Center. EBIC is a scanning electron microscope technique used for the characterization of semiconductors. To facilitate our studies, we developed a Solar Amplification System (SASY) for analyzing current distribution and defects within a solar cell module. Preliminary qualitative results will be shown for a solar cell module that demonstrates the viability of the technique using the LC-SEM. Quantitative EBIC experiments will be carried out to analyze defects and minority carrier properties. Additionally, a well-focused spot of light from an LED mounted at the side of the SEM column will scan the same area of the solar cell using the LC-SEM positioning system. SASY will then output the solar efficiency to be compared with the minority carrier properties found using EBIC.

  15. Multivariate analysis of Ion Beam Induced Luminescence spectra of irradiated silver ion-exchanged silicate glasses

    Science.gov (United States)

    Valotto, Gabrio; Quaranta, Alberto; Cattaruzza, Elti; Gonella, Francesco; Rampazzo, Giancarlo

    A multivariate analysis is used for the identification of the spectral features in Ion Beam Induced Luminescence (IBIL) spectra of soda-lime silicate glasses doped with silver by Ag+-Na+ ion exchange. Both Principal Component Analysis and multivariate analysis were used to characterize time-evolving IBIL spectra of Ag-doped glasses, by means of the identification of the number and of the wavelength positions of the main luminescent features and the study of their evolution during irradiation. This method helps to identify the spectral features of the samples spectra, even when partially overlapped or less intense. This analysis procedure does not require additional input such as the number of peaks.

  16. Recent developments of ion beam induced luminescence: radiation hardness study of thin film plastic scintillators

    Science.gov (United States)

    Quaranta, Alberto

    2005-10-01

    Ion beam induced luminescence (IBIL) measurements have been performed on thin film scintillators based on polyvinyltoluene (PVT) and 6FDA-DAD and BPDA-3F polyimides with H+ (1.85 MeV) and He+ (1.8-2.2 MeV) ion beams. The radiation hardness of the undoped polymers has been verified to depend mainly on the deposited energy density, polyimides exhibiting a higher resistance with respect to PVT. In PVT a new fluorescence band, attributed to the radical precursors of the network crosslinking, has been observed. The efficiency of doped polymers degradates with a higher rate, depending on the dye intrinsic lability. At high radiation fluences, the relative efficiency to NE102 of doped polyimides scintillators increases owing to the intrinsic host improved resistance.

  17. Three-dimensional core-shell ferromagnetic nanowires grown by focused electron beam induced deposition

    Science.gov (United States)

    Pablo-Navarro, Javier; Magén, César; María de Teresa, José

    2016-07-01

    Functional nanostructured materials often rely on the combination of more than one material to confer the desired functionality or an enhanced performance of the device. Here we report the procedure to create nanoscale heterostructured materials in the form of core-shell nanowires by focused electron beam induced deposition (FEBID) technologies. In our case, three-dimensional (3D) nanowires (nanostructures to demonstrate that the morphology of the shell is conserved during Pt coating, the surface oxidation is suppressed or confined to the Pt layer, and the average magnetization of the core is strengthened up to 30%. The proposed approach paves the way to the fabrication of 3D FEBID nanostructures based on the smart alternate deposition of two or more materials combining different physical properties or added functionalities.

  18. Microbeam Studies of Diffusion Time Resolved Ion Beam Induced Charge Collection from Stripe-Like Junctions

    Energy Technology Data Exchange (ETDEWEB)

    GUO,B.N.; BOUANANI,M.E.; RENFROW,S.N.; WALSH,DAVID S.; DOYLE,BARNEY L.; ATON,T.J.; SMITH,E.B.; BAUMANN,R.C.; DUGGAN,J.L.; MCDANIEL,F.D.

    2000-06-14

    To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accurate models of ionizing radiation induced charge collection dynamics within microcircuits. A new technique, Diffusion Time Resolved Ion Beam Induced Charge Collection (DTRIBICC), is proposed to measure the average arrival time of the diffused charge at the junction. Specially designed stripe-like junctions were experimentally studied using a 12 MeV carbon microbeam with a spot size of 1 {micro}m. The relative arrival time of ion-generated charge is measured along with the charge collection using a multiple parameter data acquisition system. The results show the importance of the diffused charge collection by junctions, which is especially significant in accounting for Multiple Bit Upset (MBUs) in digital devices.

  19. Observation of changes in ion beam induced luminescence spectra from organics during focused microbeam irradiation

    Science.gov (United States)

    Kada, Wataru; Kawabata, Shunsuke; Satoh, Takahiro; Sakai, Makoto; Parajuli, Raj Kumar; Yamada, Naoto; Koka, Masashi; Miura, Kenta; Hanaizumi, Osamu; Kamiya, Tomihiro

    2017-08-01

    Continuous measurement of ion beam induced luminescence (IBIL) spectra was demonstrated with organic targets of nicotinamide adenine dinucleotide (NADH), tryptophan, riboflavin, and a polycyclic aromatic hydrocarbon (PAH), which are typically used as markers of biological contaminants in airborne particles. A 3 MeV external proton microbeam from a single-ended accelerator at QST/Takasaki was used to probe for changes in the IBIL spectrum using micro-optics sharing a focal point with the microprobe. We find that the decay of IBIL spectra from NADH and riboflavin varied by target organic species. Moreover, new peaks in the IBIL spectrum were recorded by continuous IBIL spectroscopy from the PAH target after destruction of a peak originally obtained in the initial measurement. These results suggest that IBIL monitoring can detect changes in the chemical composition of organics under focused beam irradiation.

  20. Focused electron beam induced etching of titanium with XeF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Schoenaker, F J; Cordoba, R; Fernandez-Pacheco, R; Magen, C; Zuriaga-Monroy, C; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50018 Zaragoza (Spain); Stephan, O [Laboratoire de Physique des Solides, CNRS UMR 8502, Universite Paris Sud XI, Batiment 510, F-91405 Orsay (France); De Teresa, J M, E-mail: deteresa@unizar.es [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain)

    2011-07-01

    Titanium is a relevant technological material due to its extraordinary mechanical and biocompatible properties, its nanopatterning being an increasingly important requirement in many applications. We report the successful nanopatterning of titanium by means of focused electron beam induced etching using XeF{sub 2} as a precursor gas. Etch rates up to 1.25 x 10{sup -3} {mu}m{sup 3} s{sup -1} and minimum pattern sizes of 80 nm were obtained. Different etching parameters such as beam current, beam energy, dwell time and pixel spacing are systematically investigated, the etching process being optimized by decreasing both the beam current and the beam energy. The etching mechanism is investigated by transmission electron microscopy. Potential applications in nanotechnology are discussed.

  1. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  2. Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer (Review Paper

    Directory of Open Access Journals (Sweden)

    T. Som

    2009-07-01

    Full Text Available Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of the silicon nitride layer having good quality interfaces with the top- and the substrate-Si has been obsorved. Recrystallisation is achieved at significantly lower temperatures of 100 and 200OC for oxygen and silver ions, respectively. The fact that recrystallisation is achieved at the lowest temperature for the oxygen ions is discussed on the basis of energy loss processes.Defence Science Journal, 2009, 59(4, pp.351-355, DOI:http://dx.doi.org/10.14429/dsj.59.1533

  3. A LC Voltage-Controlled Oscillator Design and Simulation%低相位噪声压控振荡器的设计及仿真

    Institute of Scientific and Technical Information of China (English)

    梁爽; 曹娟

    2014-01-01

    With the rapid improvement on the communication technology of RF transceiver , high performance voltage-controlled oscillator has been the key link of analog integrated circuit design , production and implementation .Focus on the problem of phase noise ,a design for a 1 .115 GHz LC VCO is proposed in TSMC 0.18 μm CMOS process .The circuit is simulated by the SpectreRF in Cadence .The simulation results presented that the VCO voltage adjustment range is 4 V to 6 V ,and output frequency range is 1 .114 69 GHz to 1 .115 38 GHz .Phase noise at an offset of 10 kHz ,100 kHz and 1M Hz are -90 .9 dBc/Hz ,-118 .6 dBc/Hz and -141 .3 dBc/Hz ,respectively .In order to enhance the VCO noise performance ,the paper’s purpose is as much as possible to exchange narrow frequency for good phase noise .%随着通信技术对射频收发机性能要求的提高,高性能压控振荡器已成为模拟集成电路设计、生产和实现的关键环节.针对压控振荡器设计过程中存在相位噪声这一核心问题,采用STMC 0.18μm CMOS工艺,提出了一种1.115 GHz的电感电容压控振荡器电路,利用Cadence中的SpectreRF对电路进行仿真.仿真结果表明:在4~6 V的电压调节范围内,压控振荡器的输出频率范围为1.11469~1.11538 G Hz ,振荡频率为1.115 G Hz时,在偏离中心频率10 kHz处、100 kHz处以及1M Hz处的相位噪声分别为-90.9 dBc/Hz ,-118.6 dBc/Hz ,-141.3 dBc/Hz ,以较窄的频率调节范围换取较好的相位噪声抑制,从而提高了压控振荡器的噪声性能.

  4. Simulation of Transient Voltage Security of Large-Scale Power Grid Under Three-Level Voltage Control System and Its Control Strategy%三级电压控制体系下大电网暂态电压安全仿真及其控制策略

    Institute of Scientific and Technical Information of China (English)

    杨银国; 林舜江; 欧阳逸风; 刘明波; 温柏坚; 辛拓

    2013-01-01

      在Matlab环境下,借助电力系统分析工具箱(PSAT)实现了包含三级电压控制系统的大电网动态时域仿真,并分析其对广东电网暂态电压安全性的影响。结果表明该系统的二级电压控制紧急动作模式虽然有利于广东电网故障后的暂态电压恢复,但不能阻止暂态电压不安全事故的发生。进而,建立了针对暂态电压不安全故障的紧急切负荷控制优化模型,通过采用轨迹灵敏度法将动态优化模型转化为线性规划模型以获得紧急切负荷控制策略,动态仿真结果验证了所得控制策略能够使广东电网在严重故障后恢复暂态电压安全。%In Matlab environment and using power system analysis tools (PSAT) software, the dynamic time-domain simulation of large-scale power grid with three-level voltage control system is implemented, and the influences of three-level voltage control system on transient voltage security of Guangdong power grid are analyzed. Analysis results show that the emergency action mode of secondary voltage control in the three-level voltage control system contributes to the post-fault transient voltage recovery of load buses in Guangdong power grid, however it cannot prevent the occurrence of transient voltage insecurity. For this reason, in allusion to transient voltage insecurity accident an optimal control strategy for emergency load shedding, in which the trajectory sensitivity is utilized to turn the dynamic optimal model into linear programming model to achieve emergency load shedding control strategy, is established, and it is verified by dynamic simulation that after serious fault the transient voltage security of Guangdong power grid can be recovered by the achieved control strategy.

  5. An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures

    Science.gov (United States)

    Yu, Eunseon; Cho, Seongjae; Park, Byung-Gook

    2017-09-01

    An essential and important method for physical and electrical characterization of a metal-oxide-semiconductor (MOS) structure is the capacitance-voltage (C-V) measurement. Judging from the C-V characteristics of a MOS structure, we are allowed to predict the DC and AC behaviors of the field-effect transistor and extract a set of primary parameters. The MOS field-effect transistor (MOSFET) technology has evolved to enhance the gate controllability over the channel in order for effectively suppressing the short-channel effects (SCEs) unwantedly taking place as device scaling progresses. For the goal, numerous novel structures have been suggested for the advanced MOSFET devices. However, the C-V characteristics of such novel MOS structures have not been seldom studied in depth. In this work, we report the C-V characteristics of ultra-thin-body (UTB) MOSFETs on the bulk Si and silicon-on-insulator (SOI) substrates by rigorous technology computer-aided design (TCAD) simulation. For higher credibility and accuracy, quantum-mechanical models are activated and empirical material parameters are employed from the existing literature. The MOSFET structure and the material configurations are schemed referring advanced logic technology suggested by the most recent technology roadmap. The C-V characteristics of UTB MOSFETs having a floating body with extremely small volume are closely investigated.

  6. Light-induced structural changes in a short light, oxygen, voltage (LOV protein revealed by molecular dynamics simulations – implications for the understanding of LOV photoactivation.

    Directory of Open Access Journals (Sweden)

    Marco eBocola

    2015-10-01

    Full Text Available The modularity of light, oxygen, voltage (LOV blue-light photoreceptors has recently been exploited for the design of LOV-based optogenetic tools, which allow the light-dependent control of biological functions. For the understanding of LOV sensory function and hence the optimal design of LOV-based optogentic tools it is essential to gain an in depth atomic-level understanding of the underlying photoactivation and intramolecular signal-relay mechanisms. To address this question we performed molecular dynamics simulations on both the dark- and light-adapted state of PpSB1-LOV, a short dimeric bacterial LOV-photoreceptor protein, recently crystallized under constant illumination. While LOV dimers remained globally stable during the light-state simulation with regard to the Jα coiled-coil, distinct conformational changes for a glutamine in the vicinity of the FMN chromophore are observed. In contrast, multiple Jα-helix conformations are sampled in the dark-state. These changes coincide with a displacement of the Iβ and Hβ strands relative to the light-state structure and result in a correlated rotation of both LOV core domains in the dimer. These global changes are most likely initiated by the reorientation of the conserved glutamine Q116, whose side chain flips between the Aβ (dark state and Hβ strand (light state, while maintaining two potential hydrogen bonds to FMN-N5 and FMN-O4, respectively. This local Q116-FMN reorientation impacts on an inter-subunit salt-bridge (K117-E96, which is stabilized in the light state, hence accounting for the observed decreased mobility. Based on these findings we propose an alternative mechanism for dimeric LOV photoactivation and intramolecular signal-relay, assigning a distinct structural role for the conserved flipping glutamine. The proposed mechanism is discussed in light of universal applicability and its implications for the understanding of LOV-based optogenetic tools.

  7. A design of voltage measurement system based on simulated IIC bus%基于模拟ⅡC总线的电压测量系统

    Institute of Scientific and Technical Information of China (English)

    徐伟; 刘建成

    2011-01-01

    根据ⅡC总线的时序,编程模拟了ⅡC总线.基于模拟的ⅡC总线,采用8位串行接口A/D转换器PCF8591设计了电压测量系统.给出了系统硬件电路和主程序流程图.系统因采用ⅡC总线式结构而具有硬件结构简单、扩展性强的突出优点,为ⅡC总线在其他采集系统中的应用提供了参考.%IIC bus is simulated by C51 program according to its time sequence. Based on this simulated IIC bus, a voltage measurement system is designed by the single chip microcomputer and 8-bit A/D and D/A converter PCF8591. The PCF8591 is a single-chip, single-supply low power 8-bit CMOS data acquisition device with four analog inputs, one analog output and a serial IIC bus interface. Three address pins A0, A1 and A2 are used for programming the hardware address, allowing the use of up to eight devices connected to the IIC bus without additional hardware. Address, control and data to and from the device are transferred serially via the two-line bidirectional IIC bus.The functions of the PCF8591 include analog input multiplexing, on-chip track and hold function, 8-bit analog-todigital conversion and an 8-bit digital-to-analog conversion. The maximum conversion rate is given by the maximum speed of the IIC bus. The circuit and main program flow chart are proposed in this paper. The system has simple structure and strong expandability owes to the IIC bus. It provides reference for the application of IIC bus in acquisition system.

  8. Microstructural analysis and Transport Properties of MoO and MoC nanostructures prepared by focused electron beam-induced deposition

    Science.gov (United States)

    Makise, Kazumasa; Mitsuishi, Kazutaka; Shimojo, Masayuki; Shinozaki, Bunju

    2014-07-01

    By electron-beam-induced deposition, we have succeeded in the direct fabrication of nanowires of molybdenum oxide (MoOx) and molybdenum carbide (MoC) on a SiO2 substrate set in a scanning electron microscope. In order to prepare MoOx specimens of high purity, a precursor gas of molybdenum hexacarbonyl [Mo(CO)6] is used, mixed with oxygen gas. On the other hand, MoC is grown by mixing H2O gas with the precursor gas. The electrical transport properties of the nanowires are investigated by the DC four-terminal method. A highly resistive MoOx nanowire prepared from an as-deposited specimen by annealing in air shows nonlinear current-voltage characteristics and a high photoconductivity. The resistivity ρ of an as-deposited amorphous MoC (a-MoC) nanowire takes its maximum at a temperature T ~ 10 K and decreases to ~ 0 with decreasing temperature. This behavior of ρ(T) indicates the possible occurrence of superconductivity in a-MoC nanowires. The characteristic of ρ(T) below the superconducting transition temperature Tc ~ 4 K can be well explained by the quantum phase-slip model with a coherence length ξ(0) ~ 8 nm at T = 0.

  9. Dynamic Simulation Investigation of 750kV Stepped Switching Controllable High Voltage Shunt Reactor%750kV分级投切式可控高压并联电抗器的动态模拟研究

    Institute of Scientific and Technical Information of China (English)

    秦睿; 郭文科; 王惠中

    2012-01-01

    This paper describes the stepped switching controllable high voltage shunt reactors basic principle, the device can regulate the system reactive power, voltage and frequency over inhibition of arc current, with a continuous smooth power adjustable, harmonic current is small and the advantages of fast response. It analyzes the stepped switching controllable high voltage shunt reactor protection features and functionality, protection and circuit breaker protection, mainly to explain the valve protection and circuit breaker protection. According to the stepped switching controllable high voltage shunt reactors principles and technical characteristics, combined with power system dynamic simulation laboratory simulation system characteristics, stepped switching controllable high voltage shunt reactor protection system dynamic simulation experimental research, besides valve and circuit breaker protection dynamic simulation test results are necessary analysis and research.%主要分析了分级投切式可控高压并联电抗器保护的特点和功能,对阀保护和断路器保护进行了说明,并对阀保护和断路器保护动态模拟试验结果进行了必要的分析和研究.根据分级投切式可控高压并联电抗器的原理和技术特点,结合试验室电力系统动态模拟仿真系统的特点,对分级投切式可控高压并联电抗器的保护系统进行了动态模拟试验研究.

  10. Increase in the number of distributed power generation installations in electricity distribution grids - Simulation in a 16 kV medium-voltage network; Zunahme der dezentralen Energieerzeugungsanlagen in elektrischen Verteilnetzen: Simulationen im 16 kV Mittelspannungsnetz des AEW

    Energy Technology Data Exchange (ETDEWEB)

    Hoeckel, M.; Luechinger, P.

    2003-07-01

    This is the seventh part of a ten-part final report for the Swiss Federal Office of Energy (SFOE) on a project that looked into potential problems relating to the Swiss electricity distribution grid with respect to the increasing number of distributed power generation facilities being put into service. The identification of special conditions for the grid's operation and future development that take increasing decentralised power production into account are discussed. The results of the project activities encompass the analysis and evaluation of various problem areas associated with planning and management of the grid during normal operation and periods of malfunction, as well as required modifications to safety systems and grid configurations. This sixth appendix to the main report presents and discusses the results of simulations made on the basis of the real-life 16 kV medium-voltage distribution network operated by the Aargovian electricity utility AEW. This appendix describes the simulation methods used and the basic characteristics of medium-voltage networks and distributed generation facilities. Different types of load profiles, including domestic and industrial loads, are discussed. The results of the simulations are presented in graphical form and provide profiles of voltage and current, active and reactive power and further mains characteristics for varying load conditions. Also, daily profiles for situations with and without distributed generation are presented and short-circuit simulations and grid dynamics are discussed.

  11. Comparison of Algorithms for Control of Loads for Voltage Regulation

    DEFF Research Database (Denmark)

    Douglass, Philip James; Han, Xue; You, Shi

    2014-01-01

    Autonomous flexible loads can be utilized to regulate voltag e on low voltage feeders. This paper compares two algorithms for controllin g loads: a simple voltage droop, where load power consumption is a varied in proportio n to RMS voltage; and a normalized relative voltage droop, which modifies...... the simpl e voltage droop by subtracting the mean voltage value at the bus and dividing by the standard deviation. These two controllers are applied to hot water heaters simul ated in a simple residential feeder. The simulation results show that both controllers r educe the frequency of undervoltage events...

  12. 无刷直流电动机调压系统BUCK直流变换仿真%Simulation on BUCK DC Transformer of Brushless DC Motor Voltage Regulation System

    Institute of Scientific and Technical Information of China (English)

    张旭

    2016-01-01

    In order to improve the brushless DC motor voltage regulation system voltage conversion efficiency and reduce power consumption, based on BUCK transformer chopper voltage regulation technology was put forward. In this paper elaborat-ed the circuit structure and mathematical model of brushless DC motor with BUCK mode, analyzed technology of DC converter and BUCK dc transform. Take advantage of MATLAB software SIMULINK module modeling BUCK DC converter, simula-tion for BUCK DC transform under the 20kHz working frequency, got the switch tube gate trigger pulse, inductive voltage and inductance current, output voltage, switching tube and diode current simulation curve. The simulation results and theoretical analysis of waveform basically the same, the rationality was proved of BUCK DC converter model.%为了提高无刷直流电动机调压系统电压转换效率、降低功率消耗,提出基于BUCK变换的斩波调压技术。在阐述BUCK模式下无刷直流电动机电路结构、数学模型基础上,对直流变换器和BUCK直流变换技术进行分析。利用MATLAB软件SIMULINK模块对BUCK直流变换器进行建模,对20kHz工作频率下BUCK直流变换进行仿真,得到开关管门极触发脉冲、电感电压、电感电流、输出电压、开关管电流和二极管电流仿真曲线。仿真结果与理论分析波形基本一致,表明BUCK直流变换器模型的合理性。

  13. 宁夏嘉泽风电场低电压穿越特性仿真分析%Simulation analysis of low voltage through characteristic for Ningxia Jiaze Wind Farm

    Institute of Scientific and Technical Information of China (English)

    杨雪红

    2014-01-01

    通过电力系统全数字仿真装置(Advanced Digital Power System Simulator,ADPSS)对嘉泽风电场建立仿真模型,采用单台风电机代替同型号风电场风电机组的方法,获得不同运行方式下风电场最低电压及风电场内各风电机组机端电压,以验证整个风电场的低电压穿越能力。结果表明:在不同运行工况下,嘉泽风电场具备低电压穿越特性,符合国家标准要求。%By Advanced Digital Power System Simulator (ADPSS) makes simulation modeling of Jiaze Wind Farm,using single wind-driven generator to substitute for the same type wind-driven generators of wind farm,acquires the lowest voltage of the wind farm under different operation mode and each wind-driven generator’s port voltage in wind farm,verifies the low voltage through capability of whole wind farm. The result shows that under the different operation mode,Jiaze Wind Farm owns low voltage through characteristic and accords with the requirements of national standard.

  14. Radiation damage mechanisms in CsI(Tl) studied by ion beam induced luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Quaranta, Alberto [Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali - DIMTI, Universita di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Laboratori Nazionali di Legnaro - INFN, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy)], E-mail: quaranta@ing.unitn.it; Gramegna, Fabiana; Kravchuk, Vladimir [Laboratori Nazionali di Legnaro - INFN, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy); Scian, Carlo [Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali - DIMTI, Universita di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Laboratori Nazionali di Legnaro - INFN, Via dell' Universita 2, I-35020 Legnaro, Padova (Italy)

    2008-06-15

    Ion beam induced luminescence (IBIL) has been used to study the kinetics of defect production under ion beam irradiation in CsI(Tl) crystals with different Tl{sup +} concentrations (250, 560, 3250 and 6500 ppm). The crystals have been irradiated with H{sup +} and {sup 4}He{sup +} at 1.8 MeV. Both the scintillator spectra after irradiation and the intensity decrease at different wavelengths as a function of the fluence have been measured. The emission bands shift to higher wavelengths after irradiation, and the light decrease has been interpolated following a saturation model for the point defect concentration. Crystals with low Tl{sup +} concentrations present the UV emission peak of pure CsI at 300 nm whose intensity during H{sup +} irradiation and reaches a maximum under He{sup +} irradiation. At low Tl{sup +} concentrations the damage rate depends on the ion stopping power, while at higher concentrations it depends on the activator concentration. The results can be interpreted by assuming that the defects affecting the light emission are point defects nearby Tl{sup +} ions.

  15. Room Temperature Ion-Beam-Induced Recrystallization and Large Scale Nanopatterning.

    Science.gov (United States)

    Satpati, Biswarup; Ghosh, Tanmay

    2015-02-01

    We have studied ion-induced effects in the near-surface region of two eutectic systems. Gold and Silver nanodots on Silicon (100) substrate were prepared by thermal evaporation under high vacuum condition at room temperature (RT) and irradiated with 1.5 MeV Au2+ ions at flux ~1.25 x 10(11) ions cm-2 s-1 also at RT. These samples were characterized using cross-sectional transmission electron microscopy (XTEM) and associated techniques. We have observed that gold act as catalysis in the recrystallization process of ion-beam-induced amorphous Si at room temperature and also large mass transport up to a distance of about 60 nm into the substrate. Mass transport is much beyond the size (~ 6-20 nm) of these Au nanodots. Ag nanoparticles with diameter 15-45 nm are half-way embedded into the Si substrate and does not stimulate in recrystallization. In case of Au nanoparticles upon ion irradiation, mixed phase formed only when the local composition and transient temperature during irradiation is sufficient to cause mixing in accordance with the Au-Si stable phase diagram. Spectroscopic imaging in the scanning TEM using spatially resolved electron energy loss spectroscopy provides one of the few ways to measure the real-space nanoscale mixing.

  16. Direct-Write Fabrication of Cellulose Nano-Structures via Focused Electron Beam Induced Nanosynthesis

    Science.gov (United States)

    Ganner, Thomas; Sattelkow, Jürgen; Rumpf, Bernhard; Eibinger, Manuel; Reishofer, David; Winkler, Robert; Nidetzky, Bernd; Spirk, Stefan; Plank, Harald

    2016-09-01

    In many areas of science and technology, patterned films and surfaces play a key role in engineering and development of advanced materials. Here, we introduce a new generic technique for the fabrication of polysaccharide nano-structures via focused electron beam induced conversion (FEBIC). For the proof of principle, organosoluble trimethylsilyl-cellulose (TMSC) thin films have been deposited by spin coating on SiO2 / Si and exposed to a nano-sized electron beam. It turns out that in the exposed areas an electron induced desilylation reaction takes place converting soluble TMSC to rather insoluble cellulose. After removal of the unexposed TMSC areas, structured cellulose patterns remain on the surface with FWHM line widths down to 70 nm. Systematic FEBIC parameter sweeps reveal a generally electron dose dependent behavior with three working regimes: incomplete conversion, ideal doses and over exposure. Direct (FT-IR) and indirect chemical analyses (enzymatic degradation) confirmed the cellulosic character of ideally converted areas. These investigations are complemented by a theoretical model which suggests a two-step reaction process by means of TMSC → cellulose and cellulose → non-cellulose material conversion in excellent agreement with experimental data. The extracted, individual reaction rates allowed the derivation of design rules for FEBIC parameters towards highest conversion efficiencies and highest lateral resolution.

  17. Spatial chemistry evolution during focused electron beam-induced deposition: origins and workarounds

    Energy Technology Data Exchange (ETDEWEB)

    Winkler, Robert; Geier, Barbara [Graz Centre for Electron Microscopy, Graz (Austria); Plank, Harald [Graz Centre for Electron Microscopy, Graz (Austria); Graz University of Technology, Institute for Electron Microscopy and Nanoanalysis, Graz (Austria)

    2014-12-15

    The successful application of functional nanostructures, fabricated via focused electron-beam-induced deposition (FEBID), is known to depend crucially on its chemistry as FEBID tends to strong incorporation of carbon. Hence, it is essential to understand the underlying mechanisms which finally determine the elemental composition after fabrication. In this study we focus on these processes from a fundamental point of view by means of (1) varying electron emission on the deposit surface; and (2) changing replenishment mechanism, both driven by the growing deposit itself. First, we revisit previous results concerning chemical variations in nanopillars (with a quasi-1D footprint) depending on the process parameters. In a second step we expand the investigations to deposits with a 3D footprint which are more relevant in the context of applications. Then, we demonstrate how technical setups and directional gas fluxes influence final chemistries. Finally, we put the findings in a bigger context with respect to functionalities which demonstrates the crucial importance of carefully set up fabrication processes to achieve controllable, predictable and reproducible chemistries for FEBID deposits as a key element for industrially oriented applications. (orig.)

  18. Highly conductive and pure gold nanostructures grown by electron beam induced deposition

    Science.gov (United States)

    Shawrav, Mostafa M.; Taus, Philipp; Wanzenboeck, Heinz D.; Schinnerl, M.; Stöger-Pollach, M.; Schwarz, S.; Steiger-Thirsfeld, A.; Bertagnolli, Emmerich

    2016-09-01

    This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor. Gold content of 91 atomic % (at. %) was achieved by using water as an oxidative enhancer during direct-write deposition. A model was developed based on the deposition rate and the chemical composition, and it explains the surface processes that lead to the increases in gold purity and deposition yield. Co-injection of an oxidative enhancer enabled Focused Electron Beam Induced Deposition (FEBID)—a maskless, resistless deposition method for three dimensional (3D) nanostructures—to directly yield pure gold in a single process step, without post-deposition purification. Gold nanowires displayed resistivity down to 8.8 μΩ cm. This is the highest conductivity achieved so far from FEBID and it opens the possibility of applications in nanoelectronics, such as direct-write contacts to nanomaterials. The increased gold deposition yield and the ultralow carbon level will facilitate future applications such as the fabrication of 3D nanostructures in nanoplasmonics and biomolecule immobilization.

  19. Heavy-ion beam induced effects in enriched gadolinium target films prepared by molecular plating

    Science.gov (United States)

    Mayorov, D. A.; Tereshatov, E. E.; Werke, T. A.; Frey, M. M.; Folden, C. M.

    2017-09-01

    A series of enriched gadolinium (Gd, Z = 64) targets was prepared using the molecular plating process for nuclear physics experiments at the Cyclotron Institute at Texas A&M University. After irradiation with 48Ca and 45Sc projectiles at center-of-target energies of Ecot = 3.8-4.7 MeV/u, the molecular films displayed visible discoloration. The morphology of the films was examined and compared to the intact target surface. The thin films underwent a heavy-ion beam-induced density change as identified by scanning electron microscopy and α-particle energy loss measurements. The films became thinner and more homogenous, with the transformation occurring early on in the irradiation. This transformation is best described as a crystalline-to-amorphous phase transition induced by atomic displacement and destruction of structural order of the original film. The chemical composition of the thin films was surveyed using energy dispersive spectroscopy and X-ray diffraction, with the results confirming the complex chemistry of the molecular films previously noted in other publications.

  20. Single-crystal nanowires grown via electron-beam-induced deposition

    Science.gov (United States)

    Klein, K. L.; Randolph, S. J.; Fowlkes, J. D.; Allard, L. F.; Meyer, H. M., III; Simpson, M. L.; Rack, P. D.

    2008-08-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured β-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  1. Single-crystal nanowires grown via electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Klein, K L; Randolph, S J; Simpson, M L; Rack, P D [Materials Science and Engineering Department, University of Tennessee, 434 Dougherty Hall, Knoxville, TN 37996 (United States); Fowlkes, J D [Center for Nanophase Materials Sciences Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831 (United States); Allard, L F; III, H M Meyer [Materials Science and Technology Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831 (United States)], E-mail: prack@utk.edu

    2008-08-27

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO){sub 6}) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF{sub 6}) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured {beta}-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W{sub 3}O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  2. Cobalt-based magnetic nanostructures grown by focused-electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Begun, Evgeniya; Schwenk, Johannes; Porrati, Fabrizio; Huth, Michael [Physikalisches Institut, Goethe-Universitaet, D-60438 Frankfurt am Main (Germany)

    2011-07-01

    The fabrication of magnetic nanostructures by means of the direct-writing technique focused-electron-beam-induced deposition (FEBID) is an alternative to more conventional lithographic methods. We have grown magnetic cobalt structures by FEBID using the precursor dicobaltoctacarbonyl Co{sub 2}(CO){sub 8}. The obtained structures have a large metal content of about 85 at.% as compared to other metal-based deposits grown by the same technique, such as tungsten-based structures with 34 at.% maximum tungsten content and platin-based structures with about 24 at.% maximum platin content. We present a growth strategy for cobalt structures with tunable metal content. In particular, we show the influence of different combinations of electron-beam energy and current, the dwell time and the refresh time on the deposit composition, which was determined by energy-dispersive X-ray spectroscopy (EDX) at 5 keV. First results of magnetotransport measurements on these cobalt-based structures are presented.

  3. An iterative algorithm for determining depth profiles of collection probability by electron-beam-induced current

    Science.gov (United States)

    Konovalov, Igor; Breitenstein, Otwin

    2001-01-01

    An iterative algorithm for the derivation of depth profiles of the minority carrier collection probability in a semiconductor with or without a coating on the top is presented using energy-resolved electron-beam-induced current measurements in planar geometry. The calculation is based on the depth-dose function of Everhart and Hoff (Everhart T E and Hoff P H 1971 J. Appl. Phys. 42 5837) and on the penetration-range function of Kanaya and Okayama (Kanaya K and Okayama S 1972 J. Phys. D: Appl. Phys. 5 43) or on that of Fitting (Fitting H-J 1974 Phys. Status Solidi/ a 26 525). It can also be performed with any other depth-dose functions. Using this algorithm does not require us to make any assumptions on the shape of the collection profile within the depth of interest. The influence of an absorbing top contact and/or a limited thickness of the semiconductor layer appear in the result, but can also be taken explicitly into account. Examples using silicon and CIS solar cells as well as a GaAs LED are presented.

  4. Gas-assisted electron-beam-induced nanopatterning of high-quality titanium oxide

    Science.gov (United States)

    Riazanova, A. V.; Costanzi, B. N.; Aristov, A. I.; Rikers, Y. G. M.; Mulders, J. J. L.; Kabashin, A. V.; Dahlberg, E. Dan; Belova, L. M.

    2016-03-01

    Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10-6 in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 GΩ cm and the measured breakdown field is in the range of 10-70 V μm-1. The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio- and chemical sensors.

  5. Fe:O:C grown by focused-electron-beam-induced deposition: magnetic and electric properties

    Energy Technology Data Exchange (ETDEWEB)

    Lavrijsen, R; Schoenaker, F J; Ellis, T H; Barcones, B; Kohlhepp, J T; Swagten, H J M; Koopmans, B [Department of Applied Physics, Center for NanoMaterials and COBRA Research Institute, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Cordoba, R; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50009 Zaragoza (Spain); De Teresa, J M; Magen, C [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain); Trompenaars, P; Mulders, J J L, E-mail: r.lavrijsen@tue.nl, E-mail: deteresa@unizar.es [FEI Electron Optics, Achtseweg Noord 5, 5651 GG Eindhoven (Netherlands)

    2011-01-14

    We systematically study the effect of oxygen content on the magneto-transport and microstructure of Fe:O:C nanowires deposited by focused-electron-beam-induced (FEBID) deposition. The Fe/O ratio can be varied with an Fe content varying between {approx} 50 and 80 at.% with overall low C content ({approx}16 {+-} 3 at.%) by adding H{sub 2}O during the deposition while keeping the beam parameters constant as measured by energy dispersive x-ray (EDX) spectroscopy. The room-temperature magnetic properties for deposits with an Fe content of 66-71 at.% are investigated using the magneto-optical Kerr effect (MOKE) and electric magneto-transport measurements. The nanostructure of the deposits is investigated through cross-sectional high-resolution transmission electron microscopy (HRTEM) imaging, allowing us to link the observed magneto-resistance and resistivity to the transport mechanism in the deposits. These results demonstrate that functional magnetic nanostructures can be created, paving the way for new magnetic or even spintronics devices.

  6. Nitrogen as a carrier gas for regime control in focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Wachter Stefan

    2014-01-01

    Full Text Available This work reports on focused electron beam induced deposition (FEBID using a custom built gas injection system (GIS equipped with nitrogen as a gas carrier. We have deposited cobalt from Co2(CO8, which is usually achieved by a heated GIS. In contrast to a heated GIS, our strategy allows avoiding problems caused by eventual temperature gradients along the GIS. Moreover, the use of the gas carrier enables a high control over process conditions and consequently the properties of the synthesized nanostructures. Chemical composition and growth rate are investigated by energy dispersive X-ray spectroscopy (EDX and atomic force microscopy (AFM, respectively. We demonstrate that the N2 flux is strongly affecting the deposit growth rate without the need of heating the precursor in order to increase its vapour pressure. Particularly, AFM volume estimation of the deposited structures showed that increasing the nitrogen resulted in an enhanced deposition rate. The wide range of achievable precursor fluxes allowed to clearly distinguish between precursor- and electron-limited regime. With the carrier-based GIS an optimized deposition procedure with regards to the desired deposition regime has been enabled

  7. Study of the beam-induced neutron flux and required shielding for DIANA

    Energy Technology Data Exchange (ETDEWEB)

    Best, Andreas, E-mail: abest1@nd.edu [Department of Physics and The Joint Institute for Nuclear Astrophysics, University of Notre Dame, Notre Dame, IN 46556 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Couder, Manoel [Department of Physics and The Joint Institute for Nuclear Astrophysics, University of Notre Dame, Notre Dame, IN 46556 (United States); Famiano, Michael [Department of Physics, Western Michigan University, Kalamazoo, MI 49008 (United States); Lemut, Alberto [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Wiescher, Michael [Department of Physics and The Joint Institute for Nuclear Astrophysics, University of Notre Dame, Notre Dame, IN 46556 (United States)

    2013-11-01

    Low energy accelerators in underground locations have emerged as a powerful tool for the measurement of critical nuclear reactions for the study of energy production and element synthesis in astrophysics. While cosmic ray induced background is substantially reduced, beam induced background on target impurities and depositions on target and collimator materials remain a matter of serious concern. The Dual Ion Accelerator for Nuclear Astrophysics (DIANA) is proposed to operate as a low-level background facility in an underground location. One of the main goals of DIANA is the study of neutron sources in stellar helium burning. For these experiments DIANA is a neutron radiation source which may affect other nearby low background level experiments. We therefore investigated the required laboratory layout to attenuate the neutron flux generated in a worst-case scenario to a level below the natural background in the underground environment. Detailed Monte Carlo calculations of the neutron propagation in the laboratory show that a neutron flux many orders of magnitude above expected values gets attenuated below the natural background rate using a 1 m thick water-shielded door as well as an emergency access/egress maze.

  8. The controlled fabrication of nanopores by focused electron-beam-induced etching

    Science.gov (United States)

    Yemini, M.; Hadad, B.; Liebes, Y.; Goldner, A.; Ashkenasy, N.

    2009-06-01

    The fabrication of nanometric holes within thin silicon-based membranes is of great importance for various nanotechnology applications. The preparation of such holes with accurate control over their size and shape is, thus, gaining a lot of interest. In this work we demonstrate the use of a focused electron-beam-induced etching (FEBIE) process as a promising tool for the fabrication of such nanopores in silicon nitride membranes and study the process parameters. The reduction of silicon nitride by the electron beam followed by chemical etching of the residual elemental silicon results in a linear dependence of pore diameter on electron beam exposure time, enabling accurate control of nanopore size in the range of 17-200 nm in diameter. An optimal pressure of 5.3 × 10-6 Torr for the production of smaller pores with faster process rates, as a result of mass transport effects, was found. The pore formation process is also shown to be dependent on the details of the pulsed process cycle, which control the rate of the pore extension, and its minimal and maximal size. Our results suggest that the FEBIE process may play a key role in the fabrication of nanopores for future devices both in sensing and nano-electronics applications.

  9. The controlled fabrication of nanopores by focused electron-beam-induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Yemini, M; Ashkenasy, N [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Hadad, B; Goldner, A [The Weiss Family Laboratory for Nano-Scale Systems, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Liebes, Y [Department of Biotechnology Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel)], E-mail: nurita@bgu.ac.il

    2009-06-17

    The fabrication of nanometric holes within thin silicon-based membranes is of great importance for various nanotechnology applications. The preparation of such holes with accurate control over their size and shape is, thus, gaining a lot of interest. In this work we demonstrate the use of a focused electron-beam-induced etching (FEBIE) process as a promising tool for the fabrication of such nanopores in silicon nitride membranes and study the process parameters. The reduction of silicon nitride by the electron beam followed by chemical etching of the residual elemental silicon results in a linear dependence of pore diameter on electron beam exposure time, enabling accurate control of nanopore size in the range of 17-200 nm in diameter. An optimal pressure of 5.3 x 10{sup -6} Torr for the production of smaller pores with faster process rates, as a result of mass transport effects, was found. The pore formation process is also shown to be dependent on the details of the pulsed process cycle, which control the rate of the pore extension, and its minimal and maximal size. Our results suggest that the FEBIE process may play a key role in the fabrication of nanopores for future devices both in sensing and nano-electronics applications.

  10. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  11. Portable High Voltage Impulse Generator

    Directory of Open Access Journals (Sweden)

    S. Gómez

    2011-07-01

    Full Text Available This paper presents a portable high voltage impulse generator which was designed and built with insulation up to 20 kV. This design was based on previous work in which simulation software for standard waves was developed. Commercial components and low-cost components were used in this work; however, these particular elements are not generally used for high voltage applications. The impulse generators used in industry and laboratories are usually expensive; they are built to withstand extra high voltage and they are big, making them impossible to transport. The proposed generator is portable, thereby allowing tests to be made on devices that cannot be moved from their location. The results obtained with the proposed impulse generator were satisfactory in terms of time and waveforms compared to other commercial impulse generators and the standard impulse wave simulator.

  12. Power conditioning using dynamic voltage restorers under different voltage sag types

    Directory of Open Access Journals (Sweden)

    Ahmed M. Saeed

    2016-01-01

    Full Text Available Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs. By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  13. Power conditioning using dynamic voltage restorers under different voltage sag types.

    Science.gov (United States)

    Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

    2016-01-01

    Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  14. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    Science.gov (United States)

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  15. An Ideal System for Analysis and Interpretation of Ion Beam Induced Luminescence

    Science.gov (United States)

    Townsend, P. D.; Crespillo, M. L.

    Luminescence is produced during ion beam implantation or ion-solid interaction for most insulators, and contains rich information. Surprisingly, the information extracted is often far from optimum. Rather than summarizing literature work, the focus here is to design an optimized and feasible target chamber that could offer far more information than what has currently been obtained. Such an improved and multi-probe approach opens a range of options to simultaneously record luminescence spectra generated by the ion beam, explore transient and excited state signals via probes of secondary excitation methods (such as ionisation or photo-stimulation). In addition, one may monitor optical absorption, reflectivity and lifetime dependent features, plus stress and polarization factors. A particularly valuable addition to conventional measurements is to have the ability to modulate both the ion beam and the probes. These features allow separation of transient lifetimes, as well as sensing intermediate steps in the defect formation and/or relaxation, and growth of new phases and nanoparticle inclusions. While luminescence methods are the most sensitive probes of defect and imperfection sites in optically active materials, less work has been performed at controlled low and high temperatures. Measurement with controlled cooling or heating of the samples is effective to reveal phase transitions (both of host and inclusions). Furthermore, simultaneous excitations (e.g. ions and photons) at different temperatures may lead to different end-phase or stale structure under extreme ionization conditions and enable fabrication of unique material structures. References to the existing literature will underline that the overall benefits of studying ion beam induced luminescence can be far more fruitful than that has normally been considered.

  16. Purity and resistivity improvements for electron-beam-induced deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Mulders, J.J.L. [FEI Company, Eindhoven (Netherlands)

    2014-12-15

    Electron-beam-induced deposition (EBID) of platinum is used by many researchers. Its main application is the formation of a protective layer and the ''welding material'' for making a TEM lamella with a focused ion beam thinning process. For this application, the actual composition of the deposition is less relevant, and in practice, both the mechanical strength and the conductivity are sufficient. Another important application is the creation of an electrical connection to nanoscale structures such as nano-wires and graphene. To serve as an electrical contact, the resistivity of the Pt deposited structure has to be sufficiently low. Using the commonly used precursor MeCpPtMe{sub 3} for deposition, the resistivity as created by the basic process is 10{sup +5}-10{sup +6} higher than the value for bulk Pt, which is 10.6 μΩ cm. The reason for this is the high abundance of carbon in the deposition. To improve the deposition process, much attention has been given by the research community to parameter optimization, to ex situ or in situ removal of carbon by anneal steps, to prevention of carbon deposition by use of a carbon-free precursor, to electron beam irradiation under a high flux of oxygen and to the combination with other techniques such as atomic layer deposition (ALD). In the latter technique, the EBID structures are used as a 1-nm-thick seed layer only, while the ALD is used to selectively add pure Pt. These techniques have resulted in a low resistivity, today approaching the 10-150 μΩ cm, while the size and shape of the structure are preserved. Therefore, now, the technique is ready for application in the field of contacting nano-wires. (orig.)

  17. Images of paraffin monolayer crystals with perfect contrast: minimization of beam-induced specimen motion

    Science.gov (United States)

    Glaeser, R.M.; McMullan, G.; Faruqi, A.R.; Henderson, R.

    2013-01-01

    Quantitative analysis of electron microscope images of organic and biological two-dimensional crystals has previously shown that the absolute contrast reached only a fraction of that expected theoretically from the electron diffraction amplitudes. The accepted explanation for this is that irradiation of the specimen causes beam-induced charging or movement, which in turn causes blurring of the image due to image or specimen movement. In this paper, we used three different approaches to try to overcome this image-blurring problem for monolayer crystals of paraffin. Our first approach was to use an extreme form of spotscan imaging, in which a single image was assembled on film by the successive illumination of up to 50,000 spots each of diameter around 7nm. The second approach was to use the Medipix II detector with its zero-noise readout to assemble a time-sliced series of images of the same area in which each frame from a movie with up to 400 frames had an exposure of only 500 electrons. In the third approach, we simply used a much thicker carbon support film to increase the physical strength and conductivity of the support. Surprisingly, the first two methods involving dose fractionation respectively in space or time produced only partial improvements in contrast whereas the third approach produced many virtually perfect images, in which the absolute contrast predicted from the electron diffraction amplitudes was observed in the images. We conclude that it is possible to obtain consistently almost perfect images of beam-sensitive specimens if they are attached to an appropriately strong and conductive support, but great care is needed in practice and the problem of how best to image ice-embedded biological structures in the absence of a strong, conductive support film requires more work. PMID:21185452

  18. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ˜50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  19. Focused-electron-beam-induced processing (FEBIP) for emerging applications in carbon nanoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Fedorov, Andrei G. [Georgia Institute of Technology, George W. Woodruff School of Mechanical Engineering, Atlanta, GA (United States); Georgia Institute of Technology, Parker H. Petit Institute for Bioengineering and Bioscience, Atlanta, GA (United States); Kim, Songkil; Henry, Mathias [Georgia Institute of Technology, George W. Woodruff School of Mechanical Engineering, Atlanta, GA (United States); Kulkarni, Dhaval; Tsukruk, Vladimir V. [Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA (United States)

    2014-07-27

    Focused-electron-beam-induced processing (FEBIP), a resist-free additive nanomanufacturing technique, is an actively researched method for ''direct-write'' processing of a wide range of structural and functional nanomaterials, with high degree of spatial and time-domain control. This article attempts to critically assess the FEBIP capabilities and unique value proposition in the context of processing of electronics materials, with a particular emphasis on emerging carbon (i.e., based on graphene and carbon nanotubes) devices and interconnect structures. One of the major hurdles in advancing the carbon-based electronic materials and device fabrication is a disjoint nature of various processing steps involved in making a functional device from the precursor graphene/CNT materials. Not only this multi-step sequence severely limits the throughput and increases the cost, but also dramatically reduces the processing reproducibility and negatively impacts the quality because of possible between-the-step contamination, especially for impurity-susceptible materials such as graphene. The FEBIP provides a unique opportunity to address many challenges of carbon nanoelectronics, especially when it is employed as part of an integrated processing environment based on multiple ''beams'' of energetic particles, including electrons, photons, and molecules. This avenue is promising from the applications' prospective, as such a multi-functional (electron/photon/molecule beam) enables one to define shapes (patterning), form structures (deposition/etching), and modify (cleaning/doping/annealing) properties with locally resolved control on nanoscale using the same tool without ever changing the processing environment. It thus will have a direct positive impact on enhancing functionality, improving quality and reducing fabrication costs for electronic devices, based on both conventional CMOS and emerging carbon (CNT/graphene) materials. (orig.)

  20. Comparison of Pd electron beam induced deposition using two precursors and an oxygen purification strategy

    Science.gov (United States)

    Mansilla, C.; Zondag, Y.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2017-09-01

    Focused electron beam induced deposition (FEBID) allows the creation of nanoscale structures through dissociation of an organo-metallic precursor by electrons at the beam impact point. The deposition of Pd can be interesting for its catalytic behavior and ability to contact carbon based materials. Two precursors were investigated—Pd(hfac)2 and (Cp)Pd(allyl)—and two deposition methods: with and without an in situ oxygen purification process. The deposition parameters can be tuned for the Pd(hfac)2 precursor to provide a deposition with 23 ± 2 at.% of Pd and a main component of C at 51 ± 3 at.% and minor components of O and F. An in situ purification process using O2 was much faster than expected and improved the Pd content to up to >65 at.% while reducing the C to ∼20 at.%, and avoiding the oxidation of Pd. The resistivity was ∼100 μOhm · cm and compares favorably with a bulk value of 10 μOhm · cm. The (Cp)Pd(allyl) precursor is interesting because it does not release fluorine during the deposition and hence it does not etch a possible substrate. Its FEBID deposition had a composition of 26 ± 5 at.% of Pd with 74 ± 5 at.% of C. The O2 purification process can improve the Pd content up to ∼60 at.% while reducing C to <20 at.%, but also increasing the O content to 18 at%, which was released afterwards. The best resistivity was measured at ∼1000 μOhm · cm, although better values can be anticipated for longer post treatment times.

  1. NanoSQUID magnetometry of individual cobalt nanoparticles grown by focused electron beam induced deposition

    Science.gov (United States)

    Martínez-Pérez, M. J.; Müller, B.; Schwebius, D.; Korinski, D.; Kleiner, R.; Sesé, J.; Koelle, D.

    2017-02-01

    We demonstrate the operation of low-noise nano superconducting quantum interference devices (SQUIDs) based on the high critical field and high critical temperature superconductor YBa2Cu3O7 (YBCO) as ultra-sensitive magnetometers for single magnetic nanoparticles (MNPs). The nanoSQUIDs exploit the Josephson behavior of YBCO grain boundaries and have been patterned by focused ion beam milling. This allows us to precisely define the lateral dimensions of the SQUIDs so as to achieve large magnetic coupling between the nanoloop and individual MNPs. By means of focused electron beam induced deposition, cobalt MNPs with a typical size of several tens of nm have been grown directly on the surface of the sensors with nanometric spatial resolution. Remarkably, the nanoSQUIDs are operative over extremely broad ranges of applied magnetic field (-1 T \\lt {μ }0H\\lt 1 T) and temperature (0.3 K \\lt T\\lt 80 K). All these features together have allowed us to perform magnetization measurements under different ambient conditions and to detect the magnetization reversal of individual Co MNPs with magnetic moments (1-30) × {10}6 {μ }{{B}}. Depending on the dimensions and shape of the particles we have distinguished between two different magnetic states yielding different reversal mechanisms. The magnetization reversal is thermally activated over an energy barrier, which has been quantified for the (quasi) single-domain particles. Our measurements serve to show not only the high sensitivity achievable with YBCO nanoSQUIDs, but also demonstrate that these sensors are exceptional magnetometers for the investigation of the properties of individual nanomagnets.

  2. High resolution laser beam induced current images under trichromatic laser radiation: approximation to the solar irradiation.

    Science.gov (United States)

    Navas, F J; Alcántara, R; Fernández-Lorenzo, C; Martín-Calleja, J

    2010-03-01

    A laser beam induced current (LBIC) map of a photoactive surface is a very useful tool when it is necessary to study the spatial variability of properties such as photoconverter efficiency or factors connected with the recombination of carriers. Obtaining high spatial resolution LBIC maps involves irradiating the photoactive surface with a photonic beam with Gaussian power distribution and with a low dispersion coefficient. Laser emission fulfils these characteristics, but against it is the fact that it is highly monochromatic and therefore has a spectral distribution different to solar emissions. This work presents an instrumental system and procedure to obtain high spatial resolution LBIC maps in conditions approximating solar irradiation. The methodology developed consists of a trichromatic irradiation system based on three sources of laser excitation with emission in the red, green, and blue zones of the electromagnetic spectrum. The relative irradiation powers are determined by either solar spectrum distribution or Planck's emission formula which provides information approximate to the behavior of the system if it were under solar irradiation. In turn, an algorithm and a procedure have been developed to be able to form images based on the scans performed by the three lasers, providing information about the photoconverter efficiency of photovoltaic devices under the irradiation conditions used. This system has been checked with three photosensitive devices based on three different technologies: a commercial silicon photodiode, a commercial photoresistor, and a dye-sensitized solar cell. These devices make it possible to check how the superficial quantum efficiency has areas dependent upon the excitation wavelength while it has been possible to measure global incident photon-to-current efficiency values approximating those that would be obtained under irradiation conditions with sunlight.

  3. TOPICAL REVIEW Fabrication and characterization of nanostructures on insulator substrates by electron-beam-induced deposition

    Directory of Open Access Journals (Sweden)

    Minghui Song and Kazuo Furuya

    2008-01-01

    Full Text Available The fabrication, characterization, and decoration with metallic nanoparticles of nanostructures such as nanowhiskers, nanodendrites, and fractal-like nanotrees on insulator substrates by electron-beam-induced deposition (EBID are reviewed. Nanostructures with different morphologies of whiskers, dendrites, or trees are fabricated on insulator (Al2O3 or SiO2 substrates by EBID in transmission electron microscopes by controlling the irradiation conditions such as the electron beam intensity. The growth of the nanostructure is related to the accumulation of charges on the surface of a substrate during electron-beam irradiation. A high concentration of the target metallic element and nanocrystal grains of the element are contained in the fabricated nanostructures. The process of growth of the nanostructures is explained qualitatively on the basis of mechanisms in which the formation of the nanostructures is considered to be related to the nanoscaled unevenness of the charge distribution on the surface of the substrate, the movement of the charges to the convex surface of the substrate, and the accumulation of charges at the tip of the grown nanostructure. Novel composite structures of Pt nanoparticle/tungsten (W nanodendrite or Au nanoparticle/W nanodendrite are fabricated by the decoration of W nanodendrites with metallic elements. Because they have superior features, such as a large specific surface area, a freestanding structure on substrates, a typical size of several nanometers of the tip or the branch, and high purity, the nanostructures may have applications in technologies such as catalysts, sensors, and electron emitters. However, there are still some subjects that should be further studied before their application.

  4. Chosen Aspects Of Investigations Of Solar Cells With The Laser Beam Induced Current Technique

    Directory of Open Access Journals (Sweden)

    Chrobak Łukasz Bartłomiej

    2015-06-01

    Full Text Available This paper presents maps of spatial distributions of the short circuit current Isc(x,y and the open circuit voltage Uoc(x,y of the investigated low cost solar cells. Visible differences in values of these parameters were explained by differences in the serial and shunt resistances determined for different points of solar cells from measurements of I–V characteristics. The spectral dependence of the photo voltage of solar cell is also shown, discussed and interpreted in the model of amorphous and crystal silicon.

  5. A Synchrophasor Based Optimal Voltage Control Scheme with Successive Voltage Stability Margin Improvement

    Directory of Open Access Journals (Sweden)

    Heng-Yi Su

    2016-01-01

    Full Text Available This paper proposes an optimal control scheme based on a synchronized phasor (synchrophasor for power system secondary voltage control. The framework covers voltage stability monitoring and control. Specifically, a voltage stability margin estimation algorithm is developed and built in the newly designed adaptive secondary voltage control (ASVC method to achieve more reliable and efficient voltage regulation in power systems. This new approach is applied to improve voltage profile across the entire power grid by an optimized plan for VAR (reactive power sources allocation; therefore, voltage stability margin of a power system can be increased to reduce the risk of voltage collapse. An extensive simulation study on the IEEE 30-bus test system is carried out to demonstrate the feasibility and effectiveness of the proposed scheme.

  6. New Control Technique Applied in Dynamic Voltage Restorer for Voltage Sag Mitigation

    Directory of Open Access Journals (Sweden)

    Rosli Omar

    2010-01-01

    Full Text Available The Dynamic Voltage Restorer (DVR was a power electronics device that was able to compensate voltage sags on critical loads dynamically. The DVR consists of VSC, injection transformers, passive filters and energy storage (lead acid battery. By injecting an appropriate voltage, the DVR restores a voltage waveform and ensures constant load voltage. There were so many types of the control techniques being used in DVR for mitigating voltage sags. The efficiency of the DVR depends on the efficiency of the control technique involved in switching the inverter. Problem statement: Simulation and experimental investigation toward new algorithms development based on SVPWM. Understanding the nature of DVR and performance comparisons between the various controller technologies available. The proposed controller using space vector modulation techniques obtain higher amplitude modulation indexes if compared with conventional SPWM techniques. Moreover, space vector modulation techniques can be easily implemented using digital processors. Space vector PWM can produce about 15% higher output voltage than standard Sinusoidal PWM. Approach: The purpose of this research was to study the implementation of SVPWM in DVR. The proposed control algorithm was investigated through computer simulation by using PSCAD/EMTDC software. Results: From simulation and experimental results showed the effectiveness and efficiency of the proposed controller based on SVPWM in mitigating voltage sags in low voltage distribution systems. It was concluded that its controller also works well both in balance and unbalance conditions of voltages. Conclusion/Recommendations: The simulation and experimental results of a DVR using PSCAD/EMTDC software based on SVPWM technique showed clearly the performance of the DVR in mitigating voltage sags. The DVR operates without any difficulties to inject the appropriate voltage component to correct rapidly any anomaly in the supply voltage to keep the

  7. Simulation of Low Voltage Ride-through of Permanent Magnet Synchronous Wind Turbines%永磁同步风力发电机低电压穿越仿真分析

    Institute of Scientific and Technical Information of China (English)

    孙树敏; 万文锋; 梁得亮

    2013-01-01

    One purpose of this study is to verify by means of simulation that chopper resistor is effective in improving low voltage ride-through capacity of permanent magnet synchronous generator (PMSG) wind turbines in all kinds of voltage dips.Another purpose is to give the method to choose the value of chopper.This study analyzed the fault characteristics of PMSG wind turbines from the point of view of energy and got that the capacitor voltage of converter would keep increasing during voltage dips.Accordingly,a chopper resistor,which was installed in parallel with the capacitor,was proposed to prevent the capacitor voltage from increasing to a very high value.This study also analyzed the symmetrical and unsymmetrical fault characteristics of PMSG wind turbines through simulation when the generator was equipped with a chopper.It shows that chopper resistor is able to fulfill the demand of low voltage ride-through capacity of PMSG wind turbines and therefore provide theoretical basis for the application of chopper resistor.%通过仿真分析验证了限制电阻低电压穿越策略在各种电网电压跌落情况下的有效性,并给出了限制电阻阻值选择的原则.首先从能量平衡角度分析了永磁同步发电机的故障特性,其故障危害是变流器的电容电压会不断上升,从而得出在电容两端并联限制电阻的保护措施.然后通过仿真分析了永磁同步发电机配置限制电阻后的对称故障特性和非对称故障特性,证明了限制电阻可以实现永磁同步发电机低电压穿越要求,为限制电阻的实际应用提供了理论基础.

  8. Mitigation of Voltage Dip and Voltage Flickering by Multilevel D-STATCOM

    Directory of Open Access Journals (Sweden)

    M. S. Ballal

    2012-01-01

    Full Text Available The basic power quality problems in the distribution network are voltage sag (dip, voltage flickering, and the service interruptions. STATCOM is a Flexible AC Transmission Systems (FACTS technology device which can independently control the flow of reactive power. This paper presents the simulation and analysis of a STATCOM for voltage dip and voltage flickering mitigation. Simulations are carried out in MATLAB/Simulink to validate the performance of the STATCOM. A comparison between the six-pulse inverter and the five-level diode-clamped inverter is carried out for the performance of 66/11 KV distribution system.

  9. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  10. Beam-induced and cosmic-ray backgrounds observed in the ATLAS detector during the LHC 2012 proton-proton running period

    CERN Document Server

    Aad, Georges; Abdallah, Jalal; Abdinov, Ovsat; Abeloos, Baptiste; Aben, Rosemarie; Abolins, Maris; AbouZeid, Ossama; Abraham, Nicola; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Affolder, Tony; Agatonovic-Jovin, Tatjana; Agricola, Johannes; Aguilar-Saavedra, Juan Antonio; Ahlen, Steven; Ahmadov, Faig; Aielli, Giulio; Akerstedt, Henrik; Åkesson, Torsten Paul Ake; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexopoulos, Theodoros; Alhroob, Muhammad; Aliev, Malik; Alimonti, Gianluca; Alison, John; Alkire, Steven Patrick; Allbrooke, Benedict; Allen, Benjamin William; Allport, Phillip; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Alvarez Gonzalez, Barbara; Άlvarez Piqueras, Damián; Alviggi, Mariagrazia; Amadio, Brian Thomas; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anders, John Kenneth; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Arabidze, Giorgi; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arduh, Francisco Anuar; Arduini, Gianluigi; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Armitage, Lewis James; Arnaez, Olivier; Arnold, Hannah; Arratia, Miguel; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Artz, Sebastian; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Augsten, Kamil; Avolio, Giuseppe; Axen, Bradley; Ayoub, Mohamad Kassem; Azuelos, Georges; Baak, Max; Baas, Alessandra; Baca, Matthew John; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Baines, John; Baker, Oliver Keith; Baldin, Evgenii; Balek, Petr; Balestri, Thomas; Balli, Fabrice; Balunas, William Keaton; Banas, Elzbieta; Banerjee, Swagato; Bannoura, Arwa A E; Barak, Liron; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barklow, Timothy; Barlow, Nick; Barnes, Sarah Louise; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barranco Navarro, Laura; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Basalaev, Artem; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batista, Santiago Juan; Batley, Richard; Battaglia, Marco; Bauce, Matteo; Bauer, Florian; Bawa, Harinder Singh; Beacham, James Baker; Beattie, Michael David; Beau, Tristan; Beauchemin, Pierre-Hugues; Bechtle, Philip; Beck, Hans~Peter; Becker, Kathrin; Becker, Maurice; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bednyakov, Vadim; Bedognetti, Matteo; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Janna Katharina; Belanger-Champagne, Camille; Bell, Andrew Stuart; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belotskiy, Konstantin; Beltramello, Olga; Belyaev, Nikita; Benary, Odette; Benchekroun, Driss; Bender, Michael; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez, Jose; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Bentvelsen, Stan; Beresford, Lydia; Beretta, Matteo; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Beringer, Jürg; Berlendis, Simon; Bernard, Nathan Rogers; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertoli, Gabriele; Bertolucci, Federico; Bertram, Iain Alexander; Bertsche, Carolyn; Bertsche, David; Besjes, Geert-Jan; Bessidskaia Bylund, Olga; Bessner, Martin Florian; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bevan, Adrian John; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Biedermann, Dustin; Bielski, Rafal; Biesuz, Nicolo Vladi; Biglietti, Michela

    2016-01-01

    This paper discusses various observations on beam-induced and cosmic-ray backgrounds in the ATLAS detector during the LHC 2012 proton-proton run. Building on published results based on 2011 data, the correlations between background and residual pressure of the beam vacuum are revisited. Ghost charge evolution over 2012 and its role for backgrounds are evaluated. New methods to monitor ghost charge with beam-gas rates are presented and observations of LHC abort gap population by ghost charge are discussed in detail. Fake jets from colliding bunches and from ghost charge are analysed with improved methods, showing that ghost charge in individual radio-frequency buckets of the LHC can be resolved. Some results of two short periods of dedicated cosmic-ray background data-taking are shown; in particular cosmic-ray muon induced fake jet rates are compared to Monte Carlo simulations and to the fake jet rates from beam background. A thorough analysis of a particular LHC fill, where abnormally high background was obse...

  11. Beam-induced and cosmic-ray backgrounds observed in the ATLAS detector during the LHC 2012 proton-proton running period

    Science.gov (United States)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Abeloos, B.; Aben, R.; Abolins, M.; AbouZeid, O. S.; Abraham, N. L.; Abramowicz, H.; Abreu, H.; Abreu, R.; Abulaiti, Y.; Acharya, B. S.; Adamczyk, L.; Adams, D. L.; Adelman, J.; Adomeit, S.; Adye, T.; Affolder, A. A.; Agatonovic-Jovin, T.; Agricola, J.; Aguilar-Saavedra, J. A.; Ahlen, S. P.; Ahmadov, F.; Aielli, G.; Akerstedt, H.; Åkesson, T. P. A.; Akimov, A. V.; Alberghi, G. L.; Albert, J.; Albrand, S.; Alconada Verzini, M. J.; Aleksa, M.; Aleksandrov, I. N.; Alexa, C.; Alexander, G.; Alexopoulos, T.; Alhroob, M.; Aliev, M.; Alimonti, G.; Alison, J.; Alkire, S. P.; Allbrooke, B. M. M.; Allen, B. W.; Allport, P. P.; Aloisio, A.; Alonso, A.; Alonso, F.; Alpigiani, C.; Alvarez Gonzalez, B.; Álvarez Piqueras, D.; Alviggi, M. G.; Amadio, B. T.; Amako, K.; Amaral Coutinho, Y.; Amelung, C.; Amidei, D.; Amor Dos Santos, S. P.; Amorim, A.; Amoroso, S.; Amram, N.; Amundsen, G.; Anastopoulos, C.; Ancu, L. S.; Andari, N.; Andeen, T.; Anders, C. F.; Anders, G.; Anders, J. K.; Anderson, K. J.; Andreazza, A.; Andrei, V.; Angelidakis, S.; Angelozzi, I.; Anger, P.; Angerami, A.; Anghinolfi, F.; Anisenkov, A. V.; Anjos, N.; Annovi, A.; Antonelli, M.; Antonov, A.; Antos, J.; Anulli, F.; Aoki, M.; Aperio Bella, L.; Arabidze, G.; Arai, Y.; Araque, J. P.; Arce, A. T. H.; Arduh, F. A.; Arduini, G.; Arguin, J.-F.; Argyropoulos, S.; Arik, M.; Armbruster, A. J.; Armitage, L. J.; Arnaez, O.; Arnold, H.; Arratia, M.; Arslan, O.; Artamonov, A.; Artoni, G.; Artz, S.; Asai, S.; Asbah, N.; Ashkenazi, A.; Åsman, B.; Asquith, L.; Assamagan, K.; Astalos, R.; Atkinson, M.; Atlay, N. B.; Augsten, K.; Avolio, G.; Axen, B.; Ayoub, M. K.; Azuelos, G.; Baak, M. A.; Baas, A. E.; Baca, M. J.; Bachacou, H.; Bachas, K.; Backes, M.; Backhaus, M.; Bagiacchi, P.; Bagnaia, P.; Bai, Y.; Baines, J. T.; Baker, O. K.; Baldin, E. M.; Balek, P.; Balestri, T.; Balli, F.; Balunas, W. K.; Banas, E.; Banerjee, Sw.; Bannoura, A. A. E.; Barak, L.; Barberio, E. L.; Barberis, D.; Barbero, M.; Barillari, T.; Barklow, T.; Barlow, N.; Barnes, S. L.; Barnett, B. M.; Barnett, R. M.; Barnovska, Z.; Baroncelli, A.; Barone, G.; Barr, A. J.; Barranco Navarro, L.; Barreiro, F.; Barreiro Guimarães da Costa, J.; Bartoldus, R.; Barton, A. E.; Bartos, P.; Basalaev, A.; Bassalat, A.; Basye, A.; Bates, R. L.; Batista, S. J.; Batley, J. R.; Battaglia, M.; Bauce, M.; Bauer, F.; Bawa, H. S.; Beacham, J. B.; Beattie, M. D.; Beau, T.; Beauchemin, P. H.; Bechtle, P.; Beck, H. P.; Becker, K.; Becker, M.; Beckingham, M.; Becot, C.; Beddall, A. J.; Beddall, A.; Bednyakov, V. A.; Bedognetti, M.; Bee, C. P.; Beemster, L. J.; Beermann, T. A.; Begel, M.; Behr, J. K.; Belanger-Champagne, C.; Bell, A. S.; Bella, G.; Bellagamba, L.; Bellerive, A.; Bellomo, M.; Belotskiy, K.; Beltramello, O.; Belyaev, N. L.; Benary, O.; Benchekroun, D.; Bender, M.; Bendtz, K.; Benekos, N.; Benhammou, Y.; Benhar Noccioli, E.; Benitez, J.; Benitez Garcia, J. A.; Benjamin, D. P.; Bensinger, J. R.; Bentvelsen, S.; Beresford, L.; Beretta, M.; Berge, D.; Bergeaas Kuutmann, E.; Berger, N.; Berghaus, F.; Beringer, J.; Berlendis, S.; Bernard, N. R.; Bernius, C.; Bernlochner, F. U.; Berry, T.; Berta, P.; Bertella, C.; Bertoli, G.; Bertolucci, F.; Bertram, I. A.; Bertsche, C.; Bertsche, D.; Besjes, G. J.; Bessidskaia Bylund, O.; Bessner, M.; Besson, N.; Betancourt, C.; Bethke, S.; Bevan, A. J.; Bhimji, W.; Bianchi, R. M.; Bianchini, L.; Bianco, M.; Biebel, O.; Biedermann, D.; Bielski, R.; Biesuz, N. V.; Biglietti, M.; Bilbao De Mendizabal, J.; Bilokon, H.; Bindi, M.; Binet, S.; Bingul, A.; Bini, C.; Biondi, S.; Bjergaard, D. M.; Black, C. W.; Black, J. E.; Black, K. M.; Blackburn, D.; Blair, R. E.; Blanchard, J.-B.; Blanco, J. E.; Blazek, T.; Bloch, I.; Blocker, C.; Blum, W.; Blumenschein, U.; Blunier, S.; Bobbink, G. J.; Bobrovnikov, V. S.; Bocchetta, S. S.; Bocci, A.; Bock, C.; Boehler, M.; Boerner, D.; Bogaerts, J. A.; Bogavac, D.; Bogdanchikov, A. G.; Bohm, C.; Boisvert, V.; Bold, T.; Boldea, V.; Boldyrev, A. S.; Bomben, M.; Bona, M.; Boonekamp, M.; Borisov, A.; Borissov, G.; Bortfeldt, J.; Bortoletto, D.; Bortolotto, V.; Bos, K.; Boscherini, D.; Bosman, M.; Bossio Sola, J. D.; Boudreau, J.; Bouffard, J.; Bouhova-Thacker, E. V.; Boumediene, D.; Bourdarios, C.; Boutle, S. K.; Boveia, A.; Boyd, J.; Boyko, I. R.; Bracinik, J.; Brandt, A.; Brandt, G.; Brandt, O.; Bratzler, U.; Brau, B.; Brau, J. E.; Braun, H. M.; Breaden Madden, W. D.; Brendlinger, K.; Brennan, A. J.; Brenner, L.; Brenner, R.; Bressler, S.; Bristow, T. M.; Britton, D.; Britzger, D.; Brochu, F. M.; Brock, I.; Brock, R.; Brooijmans, G.; Brooks, T.; Brooks, W. K.; Brosamer, J.; Brost, E.; Broughton, J. H.; Bruce, R.; Bruckman de Renstrom, P. A.; Bruncko, D.; Bruneliere, R.; Bruni, A.; Bruni, G.; Brunt, BH; Bruschi, M.; Bruscino, N.; Bryant, P.; Bryngemark, L.; Buanes, T.; Buat, Q.; Buchholz, P.; Buckley, A. G.; Budagov, I. A.; Buehrer, F.; Bugge, M. K.; Bulekov, O.; Bullock, D.; Burckhart, H.; Burdin, S.; Burgard, C. D.; Burghgrave, B.; Burka, K.; Burke, S.; Burmeister, I.; Busato, E.; Büscher, D.; Büscher, V.; Bussey, P.; Butler, J. M.; Butt, A. I.; Buttar, C. M.; Butterworth, J. M.; Butti, P.; Buttinger, W.; Buzatu, A.; Buzykaev, A. R.; Cabrera Urbán, S.; Caforio, D.; Cairo, V. M.; Cakir, O.; Calace, N.; Calafiura, P.; Calandri, A.; Calderini, G.; Calfayan, P.; Caloba, L. P.; Calvet, D.; Calvet, S.; Calvet, T. P.; Camacho Toro, R.; Camarda, S.; Camarri, P.; Cameron, D.; Caminal Armadans, R.; Camincher, C.; Campana, S.; Campanelli, M.; Campoverde, A.; Canale, V.; Canepa, A.; Cano Bret, M.; Cantero, J.; Cantrill, R.; Cao, T.; Capeans Garrido, M. D. M.; Caprini, I.; Caprini, M.; Capua, M.; Caputo, R.; Carbone, R. M.; Cardarelli, R.; Cardillo, F.; Carli, T.; Carlino, G.; Carminati, L.; Caron, S.; Carquin, E.; Carrillo-Montoya, G. D.; Carter, J. R.; Carvalho, J.; Casadei, D.; Casado, M. P.; Casolino, M.; Casper, D. W.; Castaneda-Miranda, E.; Castelli, A.; Castillo Gimenez, V.; Castro, N. F.; Catinaccio, A.; Catmore, J. R.; Cattai, A.; Caudron, J.; Cavaliere, V.; Cavallaro, E.; Cavalli, D.; Cavalli-Sforza, M.; Cavasinni, V.; Ceradini, F.; Cerda Alberich, L.; Cerio, B. C.; Cerqueira, A. S.; Cerri, A.; Cerrito, L.; Cerutti, F.; Cerv, M.; Cervelli, A.; Cetin, S. A.; Chafaq, A.; Chakraborty, D.; Chalupkova, I.; Chan, S. K.; Chan, Y. L.; Chang, P.; Chapman, J. D.; Charlton, D. G.; Chatterjee, A.; Chau, C. C.; Chavez Barajas, C. A.; Che, S.; Cheatham, S.; Chegwidden, A.; Chekanov, S.; Chekulaev, S. V.; Chelkov, G. A.; Chelstowska, M. A.; Chen, C.; Chen, H.; Chen, K.; Chen, S.; Chen, S.; Chen, X.; Chen, Y.; Cheng, H. C.; Cheng, H. J.; Cheng, Y.; Cheplakov, A.; Cheremushkina, E.; Cherkaoui El Moursli, R.; Chernyatin, V.; Cheu, E.; Chevalier, L.; Chiarella, V.; Chiarelli, G.; Chiodini, G.; Chisholm, A. S.; Chitan, A.; Chizhov, M. V.; Choi, K.; Chomont, A. R.; Chouridou, S.; Chow, B. K. B.; Christodoulou, V.; Chromek-Burckhart, D.; Chudoba, J.; Chuinard, A. J.; Chwastowski, J. J.; Chytka, L.; Ciapetti, G.; Ciftci, A. K.; Cinca, D.; Cindro, V.; Cioara, I. A.; Ciocio, A.; Cirotto, F.; Citron, Z. H.; Ciubancan, M.; Clark, A.; Clark, B. L.; Clark, M. R.; Clark, P. J.; Clarke, R. N.; Clement, C.; Coadou, Y.; Cobal, M.; Coccaro, A.; Cochran, J.; Coffey, L.; Colasurdo, L.; Cole, B.; Cole, S.; Colijn, A. P.; Collot, J.; Colombo, T.; Compostella, G.; Conde Muiño, P.; Coniavitis, E.; Connell, S. H.; Connelly, I. A.; Consorti, V.; Constantinescu, S.; Conta, C.; Conti, G.; Conventi, F.; Cooke, M.; Cooper, B. D.; Cooper-Sarkar, A. M.; Cornelissen, T.; Corradi, M.; Corriveau, F.; Corso-Radu, A.; Cortes-Gonzalez, A.; Cortiana, G.; Costa, G.; Costa, M. J.; Costanzo, D.; Cottin, G.; Cowan, G.; Cox, B. E.; Cranmer, K.; Crawley, S. J.; Cree, G.; Crépé-Renaudin, S.; Crescioli, F.; Cribbs, W. A.; Crispin Ortuzar, M.; Cristinziani, M.; Croft, V.; Crosetti, G.; Cuhadar Donszelmann, T.; Cummings, J.; Curatolo, M.; Cúth, J.; Cuthbert, C.; Czirr, H.; Czodrowski, P.; D'Auria, S.; D'Onofrio, M.; Da Cunha Sargedas De Sousa, M. J.; Da Via, C.; Dabrowski, W.; Dai, T.; Dale, O.; Dallaire, F.; Dallapiccola, C.; Dam, M.; Dandoy, J. R.; Dang, N. P.; Daniells, A. C.; Dann, N. S.; Danninger, M.; Dano Hoffmann, M.; Dao, V.; Darbo, G.; Darmora, S.; Dassoulas, J.; Dattagupta, A.; Davey, W.; David, C.; Davidek, T.; Davies, M.; Davison, P.; Davygora, Y.; Dawe, E.; Dawson, I.; Daya-Ishmukhametova, R. K.; De, K.; de Asmundis, R.; De Benedetti, A.; De Castro, S.; De Cecco, S.; De Groot, N.; de Jong, P.; De la Torre, H.; De Lorenzi, F.; De Pedis, D.; De Salvo, A.; De Sanctis, U.; De Santo, A.; De Vivie De Regie, J. B.; Dearnaley, W. J.; Debbe, R.; Debenedetti, C.; Dedovich, D. V.; Deigaard, I.; Del Peso, J.; Del Prete, T.; Delgove, D.; Deliot, F.; Delitzsch, C. M.; Deliyergiyev, M.; Dell'Acqua, A.; Dell'Asta, L.; Dell'Orso, M.; Della Pietra, M.; della Volpe, D.; Delmastro, M.; Delsart, P. A.; Deluca, C.; DeMarco, D. A.; Demers, S.; Demichev, M.; Demilly, A.; Denisov, S. P.; Denysiuk, D.; Derendarz, D.; Derkaoui, J. E.; Derue, F.; Dervan, P.; Desch, K.; Deterre, C.; Dette, K.; Deviveiros, P. O.; Dewhurst, A.; Dhaliwal, S.; Di Ciaccio, A.; Di Ciaccio, L.; Di Clemente, W. K.; Di Donato, C.; Di Girolamo, A.; Di Girolamo, B.; Di Micco, B.; Di Nardo, R.; Di Simone, A.; Di Sipio, R.; Di Valentino, D.; Diaconu, C.; Diamond, M.; Dias, F. A.; Diaz, M. A.; Diehl, E. B.; Dietrich, J.; Diglio, S.; Dimitrievska, A.; Dingfelder, J.; Dita, P.; Dita, S.; Dittus, F.; Djama, F.; Djobava, T.; Djuvsland, J. I.; do Vale, M. A. B.; Dobos, D.; Dobre, M.; Doglioni, C.; Dohmae, T.; Dolejsi, J.; Dolezal, Z.; Dolgoshein, B. A.; Donadelli, M.; Donati, S.; Dondero, P.; Donini, J.; Dopke, J.; Doria, A.; Dova, M. T.; Doyle, A. T.; Drechsler, E.; Dris, M.; Du, Y.; Duarte-Campderros, J.; Duchovni, E.; Duckeck, G.; Ducu, O. A.; Duda, D.; Dudarev, A.; Duflot, L.; Duguid, L.; Dührssen, M.; Dunford, M.; Duran Yildiz, H.; Düren, M.; Durglishvili, A.; Duschinger, D.; Dutta, B.; Dyndal, M.; Eckardt, C.; Ecker, K. M.; Edgar, R. C.; Edson, W.; Edwards, N. C.; Eifert, T.; Eigen, G.; Einsweiler, K.; Ekelof, T.; El Kacimi, M.; Ellajosyula, V.; Ellert, M.; Elles, S.; Ellinghaus, F.; Elliot, A. A.; Ellis, N.; Elmsheuser, J.; Elsing, M.; Emeliyanov, D.; Enari, Y.; Endner, O. C.; Endo, M.; Ennis, J. S.; Erdmann, J.; Ereditato, A.; Ernis, G.; Ernst, J.; Ernst, M.; Errede, S.; Ertel, E.; Escalier, M.; Esch, H.; Escobar, C.; Esposito, B.; Etienvre, A. I.; Etzion, E.; Evans, H.; Ezhilov, A.; Fabbri, F.; Fabbri, L.; Facini, G.; Fakhrutdinov, R. M.; Falciano, S.; Falla, R. J.; Faltova, J.; Fang, Y.; Fanti, M.; Farbin, A.; Farilla, A.; Farina, C.; Farooque, T.; Farrell, S.; Farrington, S. M.; Farthouat, P.; Fassi, F.; Fassnacht, P.; Fassouliotis, D.; Faucci Giannelli, M.; Favareto, A.; Fawcett, W. J.; Fayard, L.; Fedin, O. L.; Fedorko, W.; Feigl, S.; Feligioni, L.; Feng, C.; Feng, E. J.; Feng, H.; Fenyuk, A. B.; Feremenga, L.; Fernandez Martinez, P.; Fernandez Perez, S.; Ferrando, J.; Ferrari, A.; Ferrari, P.; Ferrari, R.; Ferreira de Lima, D. E.; Ferrer, A.; Ferrere, D.; Ferretti, C.; Ferretto Parodi, A.; Fiedler, F.; Filipčič, A.; Filipuzzi, M.; Filthaut, F.; Fincke-Keeler, M.; Finelli, K. D.; Fiolhais, M. C. N.; Fiorini, L.; Firan, A.; Fischer, A.; Fischer, C.; Fischer, J.; Fisher, W. C.; Flaschel, N.; Fleck, I.; Fleischmann, P.; Fletcher, G. T.; Fletcher, G.; Fletcher, R. R. M.; Flick, T.; Floderus, A.; Flores Castillo, L. R.; Flowerdew, M. J.; Forcolin, G. T.; Formica, A.; Forti, A.; Foster, A. G.; Fournier, D.; Fox, H.; Fracchia, S.; Francavilla, P.; Franchini, M.; Francis, D.; Franconi, L.; Franklin, M.; Frate, M.; Fraternali, M.; Freeborn, D.; Fressard-Batraneanu, S. M.; Friedrich, F.; Froidevaux, D.; Frost, J. A.; Fukunaga, C.; Fullana Torregrosa, E.; Fusayasu, T.; Fuster, J.; Gabaldon, C.; Gabizon, O.; Gabrielli, A.; Gabrielli, A.; Gach, G. P.; Gadatsch, S.; Gadomski, S.; Gagliardi, G.; Gagnon, L. G.; Gagnon, P.; Galea, C.; Galhardo, B.; Gallas, E. J.; Gallop, B. J.; Gallus, P.; Galster, G.; Gan, K. K.; Gao, J.; Gao, Y.; Gao, Y. S.; Garay Walls, F. M.; García, C.; García Navarro, J. E.; Garcia-Sciveres, M.; Gardner, R. W.; Garelli, N.; Garonne, V.; Gascon Bravo, A.; Gatti, C.; Gaudiello, A.; Gaudio, G.; Gaur, B.; Gauthier, L.; Gavrilenko, I. L.; Gay, C.; Gaycken, G.; Gazis, E. N.; Gecse, Z.; Gee, C. N. P.; Geich-Gimbel, Ch.; Geisler, M. P.; Gemme, C.; Genest, M. H.; Geng, C.; Gentile, S.; George, S.; Gerbaudo, D.; Gershon, A.; Ghasemi, S.; Ghazlane, H.; Ghneimat, M.; Giacobbe, B.; Giagu, S.; Giannetti, P.; Gibbard, B.; Gibson, S. M.; Gignac, M.; Gilchriese, M.; Gillam, T. P. S.; Gillberg, D.; Gilles, G.; Gingrich, D. M.; Giokaris, N.; Giordani, M. P.; Giorgi, F. M.; Giorgi, F. M.; Giraud, P. F.; Giromini, P.; Giugni, D.; Giuli, F.; Giuliani, C.; Giulini, M.; Gjelsten, B. K.; Gkaitatzis, S.; Gkialas, I.; Gkougkousis, E. L.; Gladilin, L. K.; Glasman, C.; Glatzer, J.; Glaysher, P. C. F.; Glazov, A.; Goblirsch-Kolb, M.; Godlewski, J.; Goldfarb, S.; Golling, T.; Golubkov, D.; Gomes, A.; Gonçalo, R.; Goncalves Pinto Firmino Da Costa, J.; Gonella, L.; Gongadze, A.; González de la Hoz, S.; Gonzalez Parra, G.; Gonzalez-Sevilla, S.; Goossens, L.; Gorbounov, P. A.; Gordon, H. A.; Gorelov, I.; Gorini, B.; Gorini, E.; Gorišek, A.; Gornicki, E.; Goshaw, A. T.; Gössling, C.; Gostkin, M. I.; Goudet, C. R.; Goujdami, D.; Goussiou, A. G.; Govender, N.; Gozani, E.; Graber, L.; Grabowska-Bold, I.; Gradin, P. O. J.; Grafström, P.; Gramling, J.; Gramstad, E.; Grancagnolo, S.; Gratchev, V.; Gray, H. M.; Graziani, E.; Greenwood, Z. D.; Grefe, C.; Gregersen, K.; Gregor, I. M.; Grenier, P.; Grevtsov, K.; Griffiths, J.; Grillo, A. A.; Grimm, K.; Grinstein, S.; Gris, Ph.; Grivaz, J.-F.; Groh, S.; Grohs, J. P.; Gross, E.; Grosse-Knetter, J.; Grossi, G. C.; Grout, Z. J.; Guan, L.; Guan, W.; Guenther, J.; Guescini, F.; Guest, D.; Gueta, O.; Guido, E.; Guillemin, T.; Guindon, S.; Gul, U.; Gumpert, C.; Guo, J.; Guo, Y.; Gupta, S.; Gustavino, G.; Gutierrez, P.; Gutierrez Ortiz, N. G.; Gutschow, C.; Guyot, C.; Gwenlan, C.; Gwilliam, C. B.; Haas, A.; Haber, C.; Hadavand, H. K.; Haddad, N.; Hadef, A.; Haefner, P.; Hageböck, S.; Hajduk, Z.; Hakobyan, H.; Haleem, M.; Haley, J.; Hall, D.; Halladjian, G.; Hallewell, G. D.; Hamacher, K.; Hamal, P.; Hamano, K.; Hamilton, A.; Hamity, G. N.; Hamnett, P. G.; Han, L.; Hanagaki, K.; Hanawa, K.; Hance, M.; Haney, B.; Hanke, P.; Hanna, R.; Hansen, J. B.; Hansen, J. D.; Hansen, M. C.; Hansen, P. H.; Hara, K.; Hard, A. S.; Harenberg, T.; Hariri, F.; Harkusha, S.; Harrington, R. D.; Harrison, P. F.; Hartjes, F.; Hasegawa, M.; Hasegawa, Y.; Hasib, A.; Hassani, S.; Haug, S.; Hauser, R.; Hauswald, L.; Havranek, M.; Hawkes, C. M.; Hawkings, R. J.; Hawkins, A. D.; Hayden, D.; Hays, C. P.; Hays, J. M.; Hayward, H. S.; Haywood, S. J.; Head, S. J.; Heck, T.; Hedberg, V.; Heelan, L.; Heim, S.; Heim, T.; Heinemann, B.; Heinrich, J. J.; Heinrich, L.; Heinz, C.; Hejbal, J.; Helary, L.; Hellman, S.; Helsens, C.; Henderson, J.; Henderson, R. C. W.; Heng, Y.; Henkelmann, S.; Henriques Correia, A. M.; Henrot-Versille, S.; Herbert, G. H.; Hernández Jiménez, Y.; Herten, G.; Hertenberger, R.; Hervas, L.; Hesketh, G. G.; Hessey, N. P.; Hetherly, J. W.; Hickling, R.; Higón-Rodriguez, E.; Hill, E.; Hill, J. C.; Hiller, K. H.; Hillier, S. J.; Hinchliffe, I.; Hines, E.; Hinman, R. R.; Hirose, M.; Hirschbuehl, D.; Hobbs, J.; Hod, N.; Hodgkinson, M. C.; Hodgson, P.; Hoecker, A.; Hoeferkamp, M. R.; Hoenig, F.; Hohlfeld, M.; Hohn, D.; Holmes, T. R.; Homann, M.; Hong, T. M.; Hooberman, B. H.; Hopkins, W. H.; Horii, Y.; Horton, A. J.; Hostachy, J.-Y.; Hou, S.; Hoummada, A.; Howard, J.; Howarth, J.; Hrabovsky, M.; Hristova, I.; Hrivnac, J.; Hryn'ova, T.; Hrynevich, A.; Hsu, C.; Hsu, P. J.; Hsu, S.-C.; Hu, D.; Hu, Q.; Huang, Y.; Hubacek, Z.; Hubaut, F.; Huegging, F.; Huffman, T. B.; Hughes, E. W.; Hughes, G.; Huhtinen, M.; Hülsing, T. A.; Huseynov, N.; Huston, J.; Huth, J.; Iacobucci, G.; Iakovidis, G.; Ibragimov, I.; Iconomidou-Fayard, L.; Ideal, E.; Idrissi, Z.; Iengo, P.; Igonkina, O.; Iizawa, T.; Ikegami, Y.; Ikeno, M.; Ilchenko, Y.; Iliadis, D.; Ilic, N.; Ince, T.; Introzzi, G.; Ioannou, P.; Iodice, M.; Iordanidou, K.; Ippolito, V.; Irles Quiles, A.; Isaksson, C.; Ishino, M.; Ishitsuka, M.; Ishmukhametov, R.; Issever, C.; Istin, S.; Ito, F.; Ponce, J. M. Iturbe; Iuppa, R.; Ivarsson, J.; Iwanski, W.; Iwasaki, H.; Izen, J. M.; Izzo, V.; Jabbar, S.; Jackson, B.; Jackson, M.; Jackson, P.; Jain, V.; Jakobi, K. B.; Jakobs, K.; Jakobsen, S.; Jakoubek, T.; Jamin, D. O.; Jana, D. K.; Jansen, E.; Jansky, R.; Janssen, J.; Janus, M.; Jarlskog, G.; Javadov, N.; Javůrek, T.; Jeanneau, F.; Jeanty, L.; Jejelava, J.; Jeng, G.-Y.; Jennens, D.; Jenni, P.; Jentzsch, J.; Jeske, C.; Jézéquel, S.; Ji, H.; Jia, J.; Jiang, H.; Jiang, Y.; Jiggins, S.; Jimenez Pena, J.; Jin, S.; Jinaru, A.; Jinnouchi, O.; Johansson, P.; Johns, K. A.; Johnson, W. J.; Jon-And, K.; Jones, G.; Jones, R. W. L.; Jones, S.; Jones, T. J.; Jongmanns, J.; Jorge, P. M.; Jovicevic, J.; Ju, X.; Juste Rozas, A.; Köhler, M. K.; Kaczmarska, A.; Kado, M.; Kagan, H.; Kagan, M.; Kahn, S. J.; Kajomovitz, E.; Kalderon, C. W.; Kaluza, A.; Kama, S.; Kamenshchikov, A.; Kanaya, N.; Kaneti, S.; Kantserov, V. A.; Kanzaki, J.; Kaplan, B.; Kaplan, L. S.; Kapliy, A.; Kar, D.; Karakostas, K.; Karamaoun, A.; Karastathis, N.; Kareem, M. J.; Karentzos, E.; Karnevskiy, M.; Karpov, S. N.; Karpova, Z. M.; Karthik, K.; Kartvelishvili, V.; Karyukhin, A. N.; Kasahara, K.; Kashif, L.; Kass, R. D.; Kastanas, A.; Kataoka, Y.; Kato, C.; Katre, A.; Katzy, J.; Kawagoe, K.; Kawamoto, T.; Kawamura, G.; Kazama, S.; Kazanin, V. F.; Keeler, R.; Kehoe, R.; Keller, J. S.; Kempster, J. J.; Kentaro, K.; Keoshkerian, H.; Kepka, O.; Kerševan, B. P.; Kersten, S.; Keyes, R. A.; Khalil-zada, F.; Khandanyan, H.; Khanov, A.; Kharlamov, A. G.; Khoo, T. J.; Khovanskiy, V.; Khramov, E.; Khubua, J.; Kido, S.; Kim, H. Y.; Kim, S. H.; Kim, Y. K.; Kimura, N.; Kind, O. M.; King, B. T.; King, M.; King, S. B.; Kirk, J.; Kiryunin, A. E.; Kishimoto, T.; Kisielewska, D.; Kiss, F.; Kiuchi, K.; Kivernyk, O.; Kladiva, E.; Klein, M. H.; Klein, M.; Klein, U.; Kleinknecht, K.; Klimek, P.; Klimentov, A.; Klingenberg, R.; Klinger, J. A.; Klioutchnikova, T.; Kluge, E.-E.; Kluit, P.; Kluth, S.; Knapik, J.; Kneringer, E.; Knoops, E. B. F. G.; Knue, A.; Kobayashi, A.; Kobayashi, D.; Kobayashi, T.; Kobel, M.; Kocian, M.; Kodys, P.; Koffas, T.; Koffeman, E.; Kogan, L. A.; Koi, T.; Kolanoski, H.; Kolb, M.; Koletsou, I.; Komar, A. A.; Komori, Y.; Kondo, T.; Kondrashova, N.; Köneke, K.; König, A. C.; Kono, T.; Konoplich, R.; Konstantinidis, N.; Kopeliansky, R.; Koperny, S.; Köpke, L.; Kopp, A. K.; Korcyl, K.; Kordas, K.; Korn, A.; Korol, A. A.; Korolkov, I.; Korolkova, E. V.; Kortner, O.; Kortner, S.; Kosek, T.; Kostyukhin, V. V.; Kotwal, A.; Kourkoumeli-Charalampidi, A.; Kourkoumelis, C.; Kouskoura, V.; Koutsman, A.; Kowalewska, A. B.; Kowalewski, R.; Kowalski, T. Z.; Kozanecki, W.; Kozhin, A. S.; Kramarenko, V. A.; Kramberger, G.; Krasnopevtsev, D.; Krasny, M. W.; Krasznahorkay, A.; Kraus, J. K.; Kravchenko, A.; Kretz, M.; Kretzschmar, J.; Kreutzfeldt, K.; Krieger, P.; Krizka, K.; Kroeninger, K.; Kroha, H.; Kroll, J.; Kroseberg, J.; Krstic, J.; Kruchonak, U.; Krüger, H.; Krumnack, N.; Kruse, A.; Kruse, M. C.; Kruskal, M.; Kubota, T.; Kucuk, H.; Kuday, S.; Kuechler, J. T.; Kuehn, S.; Kugel, A.; Kuger, F.; Kuhl, A.; Kuhl, T.; Kukhtin, V.; Kukla, R.; Kulchitsky, Y.; Kuleshov, S.; Kuna, M.; Kunigo, T.; Kupco, A.; Kurashige, H.; Kurochkin, Y. A.; Kus, V.; Kuwertz, E. S.; Kuze, M.; Kvita, J.; Kwan, T.; Kyriazopoulos, D.; La Rosa, A.; La Rosa Navarro, J. L.; La Rotonda, L.; Lacasta, C.; Lacava, F.; Lacey, J.; Lacker, H.; Lacour, D.; Lacuesta, V. R.; Ladygin, E.; Lafaye, R.; Laforge, B.; Lagouri, T.; Lai, S.; Lammers, S.; Lampl, W.; Lançon, E.; Landgraf, U.; Landon, M. P. J.; Lang, V. S.; Lange, J. C.; Lankford, A. J.; Lanni, F.; Lantzsch, K.; Lanza, A.; Laplace, S.; Lapoire, C.; Laporte, J. F.; Lari, T.; Lasagni Manghi, F.; Lassnig, M.; Laurelli, P.; Lavrijsen, W.; Law, A. T.; Laycock, P.; Lazovich, T.; Lazzaroni, M.; Le Dortz, O.; Le Guirriec, E.; Le Menedeu, E.; Le Quilleuc, E. P.; LeBlanc, M.; LeCompte, T.; Ledroit-Guillon, F.; Lee, C. A.; Lee, S. C.; Lee, L.; Lefebvre, G.; Lefebvre, M.; Legger, F.; Leggett, C.; Lehan, A.; Lehmann Miotto, G.; Lei, X.; Leight, W. A.; Leisos, A.; Leister, A. G.; Leite, M. A. L.; Leitner, R.; Lellouch, D.; Lemmer, B.; Leney, K. J. C.; Lenz, T.; Lenzi, B.; Leone, R.; Leone, S.; Leonidopoulos, C.; Leontsinis, S.; Lerner, G.; Leroy, C.; Lesage, A. A. J.; Lester, C. G.; Levchenko, M.; Levêque, J.; Levin, D.; Levinson, L. J.; Levy, M.; Leyko, A. M.; Leyton, M.; Li, B.; Li, H.; Li, H. L.; Li, L.; Li, L.; Li, Q.; Li, S.; Li, X.; Li, Y.; Liang, Z.; Liao, H.; Liberti, B.; Liblong, A.; Lichard, P.; Lie, K.; Liebal, J.; Liebig, W.; Limbach, C.; Limosani, A.; Lin, S. C.; Lin, T. H.; Lindquist, B. E.; Lipeles, E.; Lipniacka, A.; Lisovyi, M.; Liss, T. M.; Lissauer, D.; Lister, A.; Litke, A. M.; Liu, B.; Liu, D.; Liu, H.; Liu, H.; Liu, J.; Liu, J. B.; Liu, K.; Liu, L.; Liu, M.; Liu, M.; Liu, Y. L.; Liu, Y.; Livan, M.; Lleres, A.; Llorente Merino, J.; Lloyd, S. L.; Lo Sterzo, F.; Lobodzinska, E.; Loch, P.; Lockman, W. S.; Loebinger, F. K.; Loevschall-Jensen, A. E.; Loew, K. M.; Loginov, A.; Lohse, T.; Lohwasser, K.; Lokajicek, M.; Long, B. A.; Long, J. D.; Long, R. E.; Longo, L.; Looper, K. A.; Lopes, L.; Lopez Mateos, D.; Lopez Paredes, B.; Lopez Paz, I.; Lopez Solis, A.; Lorenz, J.; Martinez, N. Lorenzo; Losada, M.; Lösel, P. J.; Lou, X.; Lounis, A.; Love, J.; Love, P. A.; Lu, H.; Lu, N.; Lubatti, H. J.; Luci, C.; Lucotte, A.; Luedtke, C.; Luehring, F.; Lukas, W.; Luminari, L.; Lundberg, O.; Lund-Jensen, B.; Lynn, D.; Lysak, R.; Lytken, E.; Lyubushkin, V.; Ma, H.; Ma, L. L.; Ma, Y.; Maccarrone, G.; Macchiolo, A.; Macdonald, C. M.; Maček, B.; Machado Miguens, J.; Madaffari, D.; Madar, R.; Maddocks, H. J.; Mader, W. F.; Madsen, A.; Maeda, J.; Maeland, S.; Maeno, T.; Maevskiy, A.; Magradze, E.; Mahlstedt, J.; Maiani, C.; Maidantchik, C.; Maier, A. A.; Maier, T.; Maio, A.; Majewski, S.; Makida, Y.; Makovec, N.; Malaescu, B.; Malecki, Pa.; Maleev, V. P.; Malek, F.; Mallik, U.; Malon, D.; Malone, C.; Maltezos, S.; Malyukov, S.; Mamuzic, J.; Mancini, G.; Mandelli, B.; Mandelli, L.; Mandić, I.; Maneira, J.; Filho, L. Manhaes de Andrade; Manjarres Ramos, J.; Mann, A.; Mansoulie, B.; Mantifel, R.; Mantoani, M.; Manzoni, S.; Mapelli, L.; Marceca, G.; March, L.; Marchiori, G.; Marcisovsky, M.; Marjanovic, M.; Marley, D. E.; Marroquim, F.; Marsden, S. P.; Marshall, Z.; Marti, L. F.; Marti-Garcia, S.; Martin, B.; Martin, T. A.; Martin, V. J.; dit Latour, B. Martin; Martinez, M.; Martin-Haugh, S.; Martoiu, V. S.; Martyniuk, A. C.; Marx, M.; Marzano, F.; Marzin, A.; Masetti, L.; Mashimo, T.; Mashinistov, R.; Masik, J.; Maslennikov, A. L.; Massa, I.; Massa, L.; Mastrandrea, P.; Mastroberardino, A.; Masubuchi, T.; Mättig, P.; Mattmann, J.; Maurer, J.; Maxfield, S. J.; Maximov, D. A.; Mazini, R.; Mazza, S. M.; McFadden, N. C.; McGoldrick, G.; McKee, S. P.; McCarn, A.; McCarthy, R. L.; McCarthy, T. G.; McClymont, L. I.; McFarlane, K. W.; Mcfayden, J. A.; Mchedlidze, G.; McMahon, S. J.; McPherson, R. A.; Medinnis, M.; Meehan, S.; Mehlhase, S.; Mehta, A.; Meier, K.; Meineck, C.; Meirose, B.; Mellado Garcia, B. R.; Meloni, F.; Mengarelli, A.; Menke, S.; Meoni, E.; Mercurio, K. M.; Mergelmeyer, S.; Mermod, P.; Merola, L.; Meroni, C.; Merritt, F. S.; Messina, A.; Metcalfe, J.; Mete, A. S.; Meyer, C.; Meyer, C.; Meyer, J.-P.; Meyer, J.; Theenhausen, H. Meyer Zu; Middleton, R. P.; Miglioranzi, S.; Mijović, L.; Mikenberg, G.; Mikestikova, M.; Mikuž, M.; Milesi, M.; Milic, A.; Miller, D. W.; Mills, C.; Milov, A.; Milstead, D. A.; Minaenko, A. A.; Minami, Y.; Minashvili, I. A.; Mincer, A. I.; Mindur, B.; Mineev, M.; Ming, Y.; Mir, L. M.; Mistry, K. P.; Mitani, T.; Mitrevski, J.; Mitsou, V. A.; Miucci, A.; Miyagawa, P. S.; Mjörnmark, J. U.; Moa, T.; Mochizuki, K.; Mohapatra, S.; Mohr, W.; Molander, S.; Moles-Valls, R.; Monden, R.; Mondragon, M. C.; Mönig, K.; Monk, J.; Monnier, E.; Montalbano, A.; Montejo Berlingen, J.; Monticelli, F.; Monzani, S.; Moore, R. W.; Morange, N.; Moreno, D.; Moreno Llácer, M.; Morettini, P.; Mori, D.; Mori, T.; Morii, M.; Morinaga, M.; Morisbak, V.; Moritz, S.; Morley, A. K.; Mornacchi, G.; Morris, J. D.; Mortensen, S. S.; Morvaj, L.; Mosidze, M.; Moss, J.; Motohashi, K.; Mount, R.; Mountricha, E.; Mouraviev, S. V.; Moyse, E. J. W.; Muanza, S.; Mudd, R. D.; Mueller, F.; Mueller, J.; Mueller, R. S. P.; Mueller, T.; Muenstermann, D.; Mullen, P.; Mullier, G. A.; Munoz Sanchez, F. J.; Murillo Quijada, J. A.; Murray, W. J.; Musheghyan, H.; Muskinja, M.; Myagkov, A. G.; Myska, M.; Nachman, B. P.; Nackenhorst, O.; Nadal, J.; Nagai, K.; Nagai, R.; Nagano, K.; Nagasaka, Y.; Nagata, K.; Nagel, M.; Nagy, E.; Nairz, A. M.; Nakahama, Y.; Nakamura, K.; Nakamura, T.; Nakano, I.; Namasivayam, H.; Naranjo Garcia, R. F.; Narayan, R.; Narrias Villar, D. I.; Naryshkin, I.; Naumann, T.; Navarro, G.; Nayyar, R.; Neal, H. A.; Nechaeva, P. Yu.; Neep, T. J.; Nef, P. D.; Negri, A.; Negrini, M.; Nektarijevic, S.; Nellist, C.; Nelson, A.; Nemecek, S.; Nemethy, P.; Nepomuceno, A. A.; Nessi, M.; Neubauer, M. S.; Neumann, M.; Neves, R. M.; Nevski, P.; Newman, P. R.; Nguyen, D. H.; Nickerson, R. B.; Nicolaidou, R.; Nicquevert, B.; Nielsen, J.; Nikiforov, A.; Nikolaenko, V.; Nikolic-Audit, I.; Nikolopoulos, K.; Nilsen, J. K.; Nilsson, P.; Ninomiya, Y.; Nisati, A.; Nisius, R.; Nobe, T.; Nodulman, L.; Nomachi, M.; Nomidis, I.; Nooney, T.; Norberg, S.; Nordberg, M.; Norjoharuddeen, N.; Novgorodova, O.; Nowak, S.; Nozaki, M.; Nozka, L.; Ntekas, K.; Nurse, E.; Nuti, F.; O'grady, F.; O'Neil, D. C.; O'Rourke, A. A.; O'Shea, V.; Oakham, F. G.; Oberlack, H.; Obermann, T.; Ocariz, J.; Ochi, A.; Ochoa, I.; Ochoa-Ricoux, J. P.; Oda, S.; Odaka, S.; Ogren, H.; Oh, A.; Oh, S. H.; Ohm, C. C.; Ohman, H.; Oide, H.; Okawa, H.; Okumura, Y.; Okuyama, T.; Olariu, A.; Oleiro Seabra, L. F.; Olivares Pino, S. A.; Oliveira Damazio, D.; Olszewski, A.; Olszowska, J.; Onofre, A.; Onogi, K.; Onyisi, P. U. E.; Oram, C. J.; Oreglia, M. J.; Oren, Y.; Orestano, D.; Orlando, N.; Orr, R. S.; Osculati, B.; Ospanov, R.; Garzon, G. Otero y.; Otono, H.; Ouchrif, M.; Ould-Saada, F.; Ouraou, A.; Oussoren, K. P.; Ouyang, Q.; Ovcharova, A.; Owen, M.; Owen, R. E.; Ozcan, V. E.; Ozturk, N.; Pachal, K.; Pacheco Pages, A.; Padilla Aranda, C.; Pagáčová, M.; Pagan Griso, S.; Paige, F.; Pais, P.; Pajchel, K.; Palacino, G.; Palestini, S.; Palka, M.; Pallin, D.; Palm, M.; Palma, A.; Panagiotopoulou, E. St.; Pandini, C. E.; Panduro Vazquez, J. G.; Pani, P.; Panitkin, S.; Pantea, D.; Paolozzi, L.; Papadopoulou, Th. D.; Papageorgiou, K.; Paramonov, A.; Paredes Hernandez, D.; Parker, A. J.; Parker, M. A.; Parker, K. A.; Parodi, F.; Parsons, J. A.; Parzefall, U.; Pascuzzi, V. R.; Pasqualucci, E.; Passaggio, S.; Pastore, F.; Pastore, Fr.; Pásztor, G.; Pataraia, S.; Patel, N. D.; Pater, J. R.; Pauly, T.; Pearce, J.; Pearson, B.; Pedersen, L. E.; Pedersen, M.; Pedraza Lopez, S.; Pedro, R.; Peleganchuk, S. V.; Pelikan, D.; Penc, O.; Peng, C.; Peng, H.; Penwell, J.; Peralva, B. S.; Perego, M. M.; Perepelitsa, D. V.; Perez Codina, E.; Perini, L.; Pernegger, H.; Perrella, S.; Peschke, R.; Peshekhonov, V. D.; Peters, K.; Peters, R. F. Y.; Petersen, B. A.; Petersen, T. C.; Petit, E.; Petridis, A.; Petridou, C.; Petroff, P.; Petrolo, E.; Petrov, M.; Petrucci, F.; Pettersson, N. E.; Peyaud, A.; Pezoa, R.; Phillips, P. W.; Piacquadio, G.; Pianori, E.; Picazio, A.; Piccaro, E.; Piccinini, M.; Pickering, M. A.; Piegaia, R.; Pilcher, J. E.; Pilkington, A. D.; Pin, A. W. J.; Pina, J.; Pinamonti, M.; Pinfold, J. L.; Pingel, A.; Pires, S.; Pirumov, H.; Pitt, M.; Plazak, L.; Pleier, M.-A.; Pleskot, V.; Plotnikova, E.; Plucinski, P.; Pluth, D.; Poettgen, R.; Poggioli, L.; Pohl, D.; Polesello, G.; Poley, A.; Policicchio, A.; Polifka, R.; Polini, A.; Pollard, C. S.; Polychronakos, V.; Pommès, K.; Pontecorvo, L.; Pope, B. G.; Popeneciu, G. A.; Popovic, D. S.; Poppleton, A.; Pospisil, S.; Potamianos, K.; Potrap, I. N.; Potter, C. J.; Potter, C. T.; Poulard, G.; Poveda, J.; Pozdnyakov, V.; Pozo Astigarraga, M. E.; Pralavorio, P.; Pranko, A.; Prell, S.; Price, D.; Price, L. E.; Primavera, M.; Prince, S.; Proissl, M.; Prokofiev, K.; Prokoshin, F.; Protopopescu, S.; Proudfoot, J.; Przybycien, M.; Puddu, D.; Puldon, D.; Purohit, M.; Puzo, P.; Qian, J.; Qin, G.; Qin, Y.; Quadt, A.; Quayle, W. B.; Queitsch-Maitland, M.; Quilty, D.; Raddum, S.; Radeka, V.; Radescu, V.; Radhakrishnan, S. K.; Radloff, P.; Rados, P.; Ragusa, F.; Rahal, G.; Raine, J. A.; Rajagopalan, S.; Rammensee, M.; Rangel-Smith, C.; Ratti, M. G.; Rauscher, F.; Rave, S.; Ravenscroft, T.; Raymond, M.; Read, A. L.; Readioff, N. P.; Rebuzzi, D. M.; Redelbach, A.; Redlinger, G.; Reece, R.; Reeves, K.; Rehnisch, L.; Reichert, J.; Reisin, H.; Rembser, C.; Ren, H.; Rescigno, M.; Resconi, S.; Rezanova, O. L.; Reznicek, P.; Rezvani, R.; Richter, R.; Richter, S.; Richter-Was, E.; Ricken, O.; Ridel, M.; Rieck, P.; Riegel, C. J.; Rieger, J.; Rifki, O.; Rijssenbeek, M.; Rimoldi, A.; Rinaldi, L.; Ristić, B.; Ritsch, E.; Riu, I.; Rizatdinova, F.; Rizvi, E.; Rizzi, C.; Robertson, S. H.; Robichaud-Veronneau, A.; Robinson, D.; Robinson, J. E. M.; Robson, A.; Roda, C.; Rodina, Y.; Rodriguez Perez, A.; Rodriguez Rodriguez, D.; Roe, S.; Rogan, C. S.; RØhne, O.; Romaniouk, A.; Romano, M.; Romano Saez, S. M.; Romero Adam, E.; Rompotis, N.; Ronzani, M.; Roos, L.; Ros, E.; Rosati, S.; Rosbach, K.; Rose, P.; Rosenthal, O.; Rossetti, V.; Rossi, E.; Rossi, L. P.; Rosten, J. H. N.; Rosten, R.; Rotaru, M.; Roth, I.; Rothberg, J.; Rousseau, D.; Royon, C. R.; Rozanov, A.; Rozen, Y.; Ruan, X.; Rubbo, F.; Rubinskiy, I.; Rud, V. I.; Rudolph, M. S.; Rühr, F.; Ruiz-Martinez, A.; Rurikova, Z.; Rusakovich, N. A.; Ruschke, A.; Russell, H. L.; Rutherfoord, J. P.; Ruthmann, N.; Ryabov, Y. F.; Rybar, M.; Rybkin, G.; Ryu, S.; Ryzhov, A.; Saavedra, A. F.; Sabato, G.; Sacerdoti, S.; Sadrozinski, H. F.-W.; Sadykov, R.; Safai Tehrani, F.; Saha, P.; Sahinsoy, M.; Saimpert, M.; Saito, T.; Sakamoto, H.; Sakurai, Y.; Salamanna, G.; Salamon, A.; Salazar Loyola, J. E.; Salek, D.; Sales De Bruin, P. H.; Salihagic, D.; Salnikov, A.; Salt, J.; Salvatore, D.; Salvatore, F.; Salvucci, A.; Salzburger, A.; Sammel, D.; Sampsonidis, D.; Sanchez, A.; Sánchez, J.; Sanchez Martinez, V.; Sandaker, H.; Sandbach, R. L.; Sander, H. G.; Sanders, M. P.; Sandhoff, M.; Sandoval, C.; Sandstroem, R.; Sankey, D. P. C.; Sannino, M.; Sansoni, A.; Santoni, C.; Santonico, R.; Santos, H.; Santoyo Castillo, I.; Sapp, K.; Sapronov, A.; Saraiva, J. G.; Sarrazin, B.; Sasaki, O.; Sasaki, Y.; Sato, K.; Sauvage, G.; Sauvan, E.; Savage, G.; Savard, P.; Sawyer, C.; Sawyer, L.; Saxon, J.; Sbarra, C.; Sbrizzi, A.; Scanlon, T.; Scannicchio, D. A.; Scarcella, M.; Scarfone, V.; Schaarschmidt, J.; Schacht, P.; Schaefer, D.; Schaefer, R.; Schaeffer, J.; Schaepe, S.; Schaetzel, S.; Schäfer, U.; Schaffer, A. C.; Schaile, D.; Schamberger, R. D.; Scharf, V.; Schegelsky, V. A.; Scheirich, D.; Schernau, M.; Schiavi, C.; Schillo, C.; Schioppa, M.; Schlenker, S.; Schmieden, K.; Schmitt, C.; Schmitt, S.; Schmitz, S.; Schneider, B.; Schnellbach, Y. J.; Schnoor, U.; Schoeffel, L.; Schoening, A.; Schoenrock, B. D.; Schopf, E.; Schorlemmer, A. L. S.; Schott, M.; Schovancova, J.; Schramm, S.; Schreyer, M.; Schuh, N.; Schultens, M. J.; Schultz-Coulon, H.-C.; Schulz, H.; Schumacher, M.; Schumm, B. A.; Schune, Ph.; Schwanenberger, C.; Schwartzman, A.; Schwarz, T. A.; Schwegler, Ph.; Schweiger, H.; Schwemling, Ph.; Schwienhorst, R.; Schwindling, J.; Schwindt, T.; Sciolla, G.; Scuri, F.; Scutti, F.; Searcy, J.; Seema, P.; Seidel, S. C.; Seiden, A.; Seifert, F.; Seixas, J. M.; Sekhniaidze, G.; Sekhon, K.; Sekula, S. J.; Seliverstov, D. M.; Semprini-Cesari, N.; Serfon, C.; Serin, L.; Serkin, L.; Sessa, M.; Seuster, R.; Severini, H.; Sfiligoj, T.; Sforza, F.; Sfyrla, A.; Shabalina, E.; Shaikh, N. W.; Shan, L. Y.; Shang, R.; Shank, J. T.; Shapiro, M.; Shatalov, P. B.; Shaw, K.; Shaw, S. M.; Shcherbakova, A.; Shehu, C. Y.; Sherwood, P.; Shi, L.; Shimizu, S.; Shimmin, C. O.; Shimojima, M.; Shiyakova, M.; Shmeleva, A.; Shoaleh Saadi, D.; Shochet, M. J.; Shojaii, S.; Shrestha, S.; Shulga, E.; Shupe, M. A.; Sicho, P.; Sidebo, P. E.; Sidiropoulou, O.; Sidorov, D.; Sidoti, A.; Siegert, F.; Sijacki, Dj.; Silva, J.; Silverstein, S. B.; Simak, V.; Simard, O.; Simic, Lj.; Simion, S.; Simioni, E.; Simmons, B.; Simon, D.; Simon, M.; Sinervo, P.; Sinev, N. B.; Sioli, M.; Siragusa, G.; Sivoklokov, S. Yu.; Sjölin, J.; Sjursen, T. B.; Skinner, M. B.; Skottowe, H. P.; Skubic, P.; Slater, M.; Slavicek, T.; Slawinska, M.; Sliwa, K.; Slovak, R.; Smakhtin, V.; Smart, B. H.; Smestad, L.; Smirnov, S. Yu.; Smirnov, Y.; Smirnova, L. N.; Smirnova, O.; Smith, M. N. K.; Smith, R. W.; Smizanska, M.; Smolek, K.; Snesarev, A. A.; Snidero, G.; Snyder, S.; Sobie, R.; Socher, F.; Soffer, A.; Soh, D. A.; Sokhrannyi, G.; Solans Sanchez, C. A.; Solar, M.; Soldatov, E. Yu.; Soldevila, U.; Solodkov, A. A.; Soloshenko, A.; Solovyanov, O. V.; Solovyev, V.; Sommer, P.; Son, H.; Song, H. Y.; Sood, A.; Sopczak, A.; Sopko, V.; Sorin, V.; Sosa, D.; Sotiropoulou, C. L.; Soualah, R.; Soukharev, A. M.; South, D.; Sowden, B. C.; Spagnolo, S.; Spalla, M.; Spangenberg, M.; Spanò, F.; Sperlich, D.; Spettel, F.; Spighi, R.; Spigo, G.; Spiller, L. A.; Spousta, M.; St. Denis, R. D.; Stabile, A.; Stahlman, J.; Stamen, R.; Stamm, S.; Stanecka, E.; Stanek, R. W.; Stanescu, C.; Stanescu-Bellu, M.; Stanitzki, M. M.; Stapnes, S.; Starchenko, E. A.; Stark, G. H.; Stark, J.; Staroba, P.; Starovoitov, P.; Stärz, S.; Staszewski, R.; Steinberg, P.; Stelzer, B.; Stelzer, H. J.; Stelzer-Chilton, O.; Stenzel, H.; Stewart, G. A.; Stillings, J. A.; Stockton, M. C.; Stoebe, M.; Stoicea, G.; Stolte, P.; Stonjek, S.; Stradling, A. R.; Straessner, A.; Stramaglia, M. E.; Strandberg, J.; Strandberg, S.; Strandlie, A.; Strauss, M.; Strizenec, P.; Ströhmer, R.; Strom, D. M.; Stroynowski, R.; Strubig, A.; Stucci, S. A.; Stugu, B.; Styles, N. A.; Su, D.; Su, J.; Subramaniam, R.; Suchek, S.; Sugaya, Y.; Suk, M.; Sulin, V. V.; Sultansoy, S.; Sumida, T.; Sun, S.; Sun, X.; Sundermann, J. E.; Suruliz, K.; Susinno, G.; Sutton, M. R.; Suzuki, S.; Svatos, M.; Swiatlowski, M.; Sykora, I.; Sykora, T.; Ta, D.; Taccini, C.; Tackmann, K.; Taenzer, J.; Taffard, A.; Tafirout, R.; Taiblum, N.; Takai, H.; Takashima, R.; Takeda, H.; Takeshita, T.; Takubo, Y.; Talby, M.; Talyshev, A. A.; Tam, J. Y. C.; Tan, K. G.; Tanaka, J.; Tanaka, R.; Tanaka, S.; Tannenwald, B. B.; Tapia Araya, S.; Tapprogge, S.; Tarem, S.; Tartarelli, G. F.; Tas, P.; Tasevsky, M.; Tashiro, T.; Tassi, E.; Tavares Delgado, A.; Tayalati, Y.; Taylor, A. C.; Taylor, G. N.; Taylor, P. T. E.; Taylor, W.; Teischinger, F. A.; Teixeira-Dias, P.; Temming, K. K.; Temple, D.; Ten Kate, H.; Teng, P. K.; Teoh, J. J.; Tepel, F.; Terada, S.; Terashi, K.; Terron, J.; Terzo, S.; Testa, M.; Teuscher, R. J.; Theveneaux-Pelzer, T.; Thomas, J. P.; Thomas-Wilsker, J.; Thompson, E. N.; Thompson, P. D.; Thompson, R. J.; Thompson, A. S.; Thomsen, L. A.; Thomson, E.; Thomson, M.; Tibbetts, M. J.; Ticse Torres, R. E.; Tikhomirov, V. O.; Tikhonov, Yu. A.; Timoshenko, S.; Tipton, P.; Tisserant, S.; Todome, K.; Todorov, T.; Todorova-Nova, S.; Tojo, J.; Tokár, S.; Tokushuku, K.; Tolley, E.; Tomlinson, L.; Tomoto, M.; Tompkins, L.; Toms, K.; Tong, B.; Torrence, E.; Torres, H.; Torró Pastor, E.; Toth, J.; Touchard, F.; Tovey, D. R.; Trefzger, T.; Tricoli, A.; Trigger, I. M.; Trincaz-Duvoid, S.; Tripiana, M. F.; Trischuk, W.; Trocmé, B.; Trofymov, A.; Troncon, C.; Trottier-McDonald, M.; Trovatelli, M.; Truong, L.; Trzebinski, M.; Trzupek, A.; Tseng, J. C.-L.; Tsiareshka, P. V.; Tsipolitis, G.; Tsirintanis, N.; Tsiskaridze, S.; Tsiskaridze, V.; Tskhadadze, E. G.; Tsui, K. M.; Tsukerman, I. I.; Tsulaia, V.; Tsuno, S.; Tsybychev, D.; Tudorache, A.; Tudorache, V.; Tuna, A. N.; Tupputi, S. A.; Turchikhin, S.; Turecek, D.; Turgeman, D.; Turra, R.; Turvey, A. J.; Tuts, P. M.; Tyndel, M.; Ucchielli, G.; Ueda, I.; Ueno, R.; Ughetto, M.; Ukegawa, F.; Unal, G.; Undrus, A.; Unel, G.; Ungaro, F. C.; Unno, Y.; Unverdorben, C.; Urban, J.; Urquijo, P.; Urrejola, P.; Usai, G.; Usanova, A.; Vacavant, L.; Vacek, V.; Vachon, B.; Valderanis, C.; Valdes Santurio, E.; Valencic, N.; Valentinetti, S.; Valero, A.; Valery, L.; Valkar, S.; Vallecorsa, S.; Valls Ferrer, J. A.; Van Den Wollenberg, W.; Van Der Deijl, P. C.; van der Geer, R.; van der Graaf, H.; van Eldik, N.; van Gemmeren, P.; Van Nieuwkoop, J.; van Vulpen, I.; van Woerden, M. C.; Vanadia, M.; Vandelli, W.; Vanguri, R.; Vaniachine, A.; Vankov, P.; Vardanyan, G.; Vari, R.; Varnes, E. W.; Varol, T.; Varouchas, D.; Vartapetian, A.; Varvell, K. E.; Vasquez, J. G.; Vazeille, F.; Vazquez Schroeder, T.; Veatch, J.; Veloce, L. M.; Veloso, F.; Veneziano, S.; Ventura, A.; Venturi, M.; Venturi, N.; Venturini, A.; Vercesi, V.; Verducci, M.; Verkerke, W.; Vermeulen, J. C.; Vest, A.; Vetterli, M. C.; Viazlo, O.; Vichou, I.; Vickey, T.; Boeriu, O. E. Vickey; Viehhauser, G. H. A.; Viel, S.; Vigani, L.; Vigne, R.; Villa, M.; Villaplana Perez, M.; Vilucchi, E.; Vincter, M. G.; Vinogradov, V. B.; Vittori, C.; Vivarelli, I.; Vlachos, S.; Vlasak, M.; Vogel, M.; Vokac, P.; Volpi, G.; Volpi, M.; von der Schmitt, H.; von Toerne, E.; Vorobel, V.; Vorobev, K.; Vos, M.; Voss, R.; Vossebeld, J. H.; Vranjes, N.; Vranjes Milosavljevic, M.; Vrba, V.; Vreeswijk, M.; Vuillermet, R.; Vukotic, I.; Vykydal, Z.; Wagner, P.; Wagner, W.; Wahlberg, H.; Wahrmund, S.; Wakabayashi, J.; Walder, J.; Walker, R.; Walkowiak, W.; Wallangen, V.; Wang, C.; Wang, C.; Wang, F.; Wang, H.; Wang, H.; Wang, J.; Wang, J.; Wang, K.; Wang, R.; Wang, S. M.; Wang, T.; Wang, T.; Wang, X.; Wanotayaroj, C.; Warburton, A.; Ward, C. P.; Wardrope, D. R.; Washbrook, A.; Watkins, P. M.; Watson, A. T.; Watson, I. J.; Watson, M. F.; Watts, G.; Watts, S.; Waugh, B. M.; Webb, S.; Weber, M. S.; Weber, S. W.; Webster, J. S.; Weidberg, A. R.; Weinert, B.; Weingarten, J.; Weiser, C.; Weits, H.; Wells, P. S.; Wenaus, T.; Wengler, T.; Wenig, S.; Wermes, N.; Werner, M.; Werner, P.; Wessels, M.; Wetter, J.; Whalen, K.; Whallon, N. L.; Wharton, A. M.; White, A.; White, M. J.; White, R.; White, S.; Whiteson, D.; Wickens, F. J.; Wiedenmann, W.; Wielers, M.; Wienemann, P.; Wiglesworth, C.; Wiik-Fuchs, L. A. M.; Wildauer, A.; Wilk, F.; Wilkens, H. G.; Williams, H. H.; Williams, S.; Willis, C.; Willocq, S.; Wilson, J. A.; Wingerter-Seez, I.; Winklmeier, F.; Winston, O. J.; Winter, B. T.; Wittgen, M.; Wittkowski, J.; Wollstadt, S. J.; Wolter, M. W.; Wolters, H.; Wosiek, B. K.; Wotschack, J.; Woudstra, M. J.; Wozniak, K. W.; Wu, M.; Wu, M.; Wu, S. L.; Wu, X.; Wu, Y.; Wyatt, T. R.; Wynne, B. M.; Xella, S.; Xu, D.; Xu, L.; Yabsley, B.; Yacoob, S.; Yakabe, R.; Yamaguchi, D.; Yamaguchi, Y.; Yamamoto, A.; Yamamoto, S.; Yamanaka, T.; Yamauchi, K.; Yamazaki, Y.; Yan, Z.; Yang, H.; Yang, H.; Yang, Y.; Yang, Z.; Yao, W.-M.; Yap, Y. C.; Yasu, Y.; Yatsenko, E.; Yau Wong, K. H.; Ye, J.; Ye, S.; Yeletskikh, I.; Yen, A. L.; Yildirim, E.; Yorita, K.; Yoshida, R.; Yoshihara, K.; Young, C.; Young, C. J. S.; Youssef, S.; Yu, D. R.; Yu, J.; Yu, J. M.; Yu, J.; Yuan, L.; Yuen, S. P. Y.; Yusuff, I.; Zabinski, B.; Zaidan, R.; Zaitsev, A. M.; Zakharchuk, N.; Zalieckas, J.; Zaman, A.; Zambito, S.; Zanello, L.; Zanzi, D.; Zeitnitz, C.; Zeman, M.; Zemla, A.; Zeng, J. C.; Zeng, Q.; Zengel, K.; Zenin, O.; Ženiš, T.; Zerwas, D.; Zhang, D.; Zhang, F.; Zhang, G.; Zhang, H.; Zhang, J.; Zhang, L.; Zhang, R.; Zhang, R.; Zhang, X.; Zhang, Z.; Zhao, X.; Zhao, Y.; Zhao, Z.; Zhemchugov, A.; Zhong, J.; Zhou, B.; Zhou, C.; Zhou, L.; Zhou, L.; Zhou, M.; Zhou, N.; Zhu, C. G.; Zhu, H.; Zhu, J.; Zhu, Y.; Zhuang, X.; Zhukov, K.; Zibell, A.; Zieminska, D.; Zimine, N. I.; Zimmermann, C.; Zimmermann, S.; Zinonos, Z.; Zinser, M.; Ziolkowski, M.; Živković, L.; Zobernig, G.; Zoccoli, A.; zur Nedden, M.; Zurzolo, G.; Zwalinski, L.

    2016-05-01

    This paper discusses various observations on beam-induced and cosmic-ray backgrounds in the ATLAS detector during the LHC 2012 proton-proton run. Building on published results based on 2011 data, the correlations between background and residual pressure of the beam vacuum are revisited. Ghost charge evolution over 2012 and its role for backgrounds are evaluated. New methods to monitor ghost charge with beam-gas rates are presented and observations of LHC abort gap population by ghost charge are discussed in detail. Fake jets from colliding bunches and from ghost charge are analysed with improved methods, showing that ghost charge in individual radio-frequency buckets of the LHC can be resolved. Some results of two short periods of dedicated cosmic-ray background data-taking are shown; in particular cosmic-ray muon induced fake jet rates are compared to Monte Carlo simulations and to the fake jet rates from beam background. A thorough analysis of a particular LHC fill, where abnormally high background was observed, is presented. Correlations between backgrounds and beam intensity losses in special fills with very high β* are studied.

  12. Influence of the shape and surface oxidation in the magnetization reversal of thin iron nanowires grown by focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Luis A. Rodríguez

    2015-06-01

    Full Text Available Iron nanostructures grown by focused electron beam induced deposition (FEBID are promising for applications in magnetic sensing, storage and logic. Such applications require a precise design and determination of the coercive field (HC, which depends on the shape of the nanostructure. In the present work, we have used the Fe2(CO9 precursor to grow iron nanowires by FEBID in the thickness range from 10 to 45 nm and width range from 50 to 500 nm. These nanowires exhibit an Fe content between 80 and 85%, thus giving a high ferromagnetic signal. Magneto-optical Kerr characterization indicates that HC decreases for increasing thickness and width, providing a route to control the magnetization reversal field through the modification of the nanowire dimensions. Transmission electron microscopy experiments indicate that these wires have a bell-type shape with a surface oxide layer of about 5 nm. Such features are decisive in the actual value of HC as micromagnetic simulations demonstrate. These results will help to make appropriate designs of magnetic nanowires grown by FEBID.

  13. Mitigation Voltage Sag in Power System by Static Synchronous Compensator

    Directory of Open Access Journals (Sweden)

    Prechanon Kumkratug

    2010-01-01

    Full Text Available Problem statement: The disturbance in power system is unavoidable situation. It cause in voltage sag in power system. Approach: This study applied the STATCOM to mitigate voltage of the system. The mathematical model of power system equipped with a STATCOM is systematically derived. The presented mathematical model is shown how it effects on voltage sag improvement. The simulation results are tested on a Single Machine Infinite bus. The proposed method is equipped in sample system with severe disturbance. The variation voltage of the system without and with a STATCOM is plotted and compared. Results: It was found that the system without a STATCOM has high voltage variation especially voltage sags whereas with a STATCOM the system voltage has small voltage sages. Conclusion: From the simulation results, the STATCOM can mitigate voltage of power system.

  14. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  15. Voltage, Temperature, Frequency Margin Test Report

    DEFF Research Database (Denmark)

    Denver, Troelz

    1999-01-01

    The purpose of the tests is to establish the camera functionality when it is exposed to an extreme environment for prolonged periods, thus simulating the end of life performance. This environment covers temperature, input clock frequency and supply voltage variation......The purpose of the tests is to establish the camera functionality when it is exposed to an extreme environment for prolonged periods, thus simulating the end of life performance. This environment covers temperature, input clock frequency and supply voltage variation...

  16. History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

    Science.gov (United States)

    Koops, Hans W. P.

    2015-12-01

    The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

  17. Optimization of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Meijun; Das, Ujjwal; Bowden, Stuart; Hegedus, Steven; Birmire, Robert

    2009-06-09

    In this paper, two-dimensional (2D) simulation of interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells is presented using Sentaurus Device, a software package of Synopsys TCAD. A model is established incorporating a distribution of trap states of amorphous-silicon material and thermionic emission across the amorphous-silicon / crystalline-silicon heterointerface. The 2D nature of IBC-SHJ device is evaluated and current density-voltage (J-V) curves are generated. Optimization of IBC-SHJ solar cells is then discussed through simulation. It is shown that the open circuit voltage (VOC) and short circuit current density (JSC) of IBC-SHJ solar cells increase with decreasing front surface recombination velocity. The JSC improves further with the increase of relative coverage of p-type emitter contacts, which is explained by the simulated and measured position dependent laser beam induced current (LBIC) line scan. The S-shaped J-V curves with low fill factor (FF) observed in experiments are also simulated, and three methods to improve FF by modifying the intrinsic a-Si buffer layer are suggested: (i) decreased thickness, (ii) increased conductivity, and (iii) reduced band gap. With all these optimizations, an efficiency of 26% for IBC-SHJ solar cells is potentially achievable.

  18. Reflection High-Energy Electron Diffraction Beam-Induced Structural and Property Changes on WO3 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Du, Yingge; Zhang, Hongliang; Varga, Tamas; Chambers, Scott A.

    2014-08-08

    Reduction of transition metal oxides can greatly change their physical and chemical properties. Using deposition of WO3 as a case study, we demonstrate that reflection high-energy electron diffraction (RHEED), a surface-sensitive tool widely used to monitor thin-film deposition processes, can significantly affect the cation valence and physical properties of the films through electron-beam induced sample reduction. The RHEED beam is found to increase film smoothness during epitaxial growth of WO3, as well as change the electronic properties of the film through preferential removal of surface oxygen.

  19. Ongoing characterization of the forced electron beam induced arc discharge ion source for the selective production of exotic species facility

    Energy Technology Data Exchange (ETDEWEB)

    Manzolaro, M., E-mail: mattia.manzolaro@lnl.infn.it; Andrighetto, A.; Monetti, A.; Scarpa, D.; Rossignoli, M.; Vasquez, J.; Corradetti, S.; Calderolla, M.; Prete, G. [INFN, Laboratori Nazionali di Legnaro, Viale dell’Universita’ 2 - 35020 Legnaro, Padova,Italy (Italy); Meneghetti, G. [Department of Industrial Engineering, University of Padova, Via Venezia 1 - 35131 Padova (Italy)

    2014-02-15

    An intense research and development activity to finalize the design of the target ion source system for the selective production of exotic species (SPES) facility (operating according to the isotope separation on line technique) is at present ongoing at Legnaro National Laboratories. In particular, the characterization of ion sources in terms of ionization efficiency and transversal emittance is currently in progress, and a preliminary set of data is already available. In this work, the off-line ionization efficiency and emittance measurements for the SPES forced electron beam induced arc discharge ion source in the case of a stable Ar beam are presented in detail.

  20. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  1. Current–voltage characteristics of manganite–titanite perovskite junctions

    Directory of Open Access Journals (Sweden)

    Benedikt Ifland

    2015-07-01

    Full Text Available After a general introduction into the Shockley theory of current voltage (J–V characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1−yNbyO3, y = 0.002 and p-doped Pr1−xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface.

  2. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  3. A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC

    CERN Document Server

    Vittone, E; Lo Giudice, A; Polesello, P; Manfredotti, C

    1999-01-01

    Collection efficiency profiles as determined by the ion beam-induced charge (IBIC) technique have been considered to evaluate the spectroscopic performance of a cadmium telluride (CdTe) nuclear radiation detector. The dependence of such profiles on the applied bias voltage and the shaping time are presented and discussed on the basis of a theoretical model, which is also used to evaluate the electron/hole collection lengths profiles. Experimental collection efficiency profiles were used as input data of the 'ISIDE' Monte Carlo programme to simulate the CdTe response to gamma rays produced by sup 5 sup 7 Co. A systematic investigation of such spectra obtained under different detection conditions shows the effects of non constant collection efficiency profiles and ballistic deficit on the energy resolution of the detector.

  4. Technical feasibility study of Voltage Optimization Unit

    DEFF Research Database (Denmark)

    Hu, Junjie; Marinelli, Mattia; Coppo, Massimiliano

    transformer with OLTC per phase is necessary and valuable. The main conclusion is that power distribution transformer with OLTC control on each phase can significantly improve the PV hosting capacity in the analyzed unbal-anced scenarios. To investigate the verification problem, a simulation study...... is performed using the soft-wares DigSilent PowerFactory and Matlab. In this simulation study, a real low voltage network from Dong Eldistribution is modeled in Powerfactory. The measured data of the real low voltage network is analyzed and the resulting loading profiles including active and reactive power...... are used as load basics for the analysis. In term of PV genera-tion profiles, a realistic PV output power is assumed. Four relevant indicies such as phase neutral voltage, netural potential voltage, unbalanced factor (VUF), and power losses are evaluated in the present study. The simulation tests include...

  5. Non-rigid image registration to reduce beam-induced blurring of cryo-electron microscopy images

    Energy Technology Data Exchange (ETDEWEB)

    Karimi Nejadasl, Fatemeh; Karuppasamy, Manikandan [Leiden University Medical Center, PO Box 9600, 2300RC Leiden (Netherlands); Newman, Emily R.; McGeehan, John E. [University of Portsmouth, Portsmouth PO1 2DY (United Kingdom); Ravelli, Raimond B. G., E-mail: raimond.nl@gmail.com [Leiden University Medical Center, PO Box 9600, 2300RC Leiden (Netherlands)

    2013-01-01

    Cryo-electron microscopy images of vitrified large macromolecular complexes can become blurred due to beam-induced specimen alterations. Exposure series are examined, and rigid and non-rigid image registration schemes are applied to reduce such blurring. The typical dose used to record cryo-electron microscopy images from vitrified biological specimens is so high that radiation-induced structural alterations are bound to occur during data acquisition. Integration of all scattered electrons into one image can lead to significant blurring, particularly if the data are collected from an unsupported thin layer of ice suspended over the holes of a support film. Here, the dose has been fractioned and exposure series have been acquired in order to study beam-induced specimen movements under low dose conditions, prior to bubbling. Gold particles were added to the protein sample as fiducial markers. These were automatically localized and tracked throughout the exposure series and showed correlated motions within small patches, with larger amplitudes of motion vectors at the start of a series compared with the end of each series. A non-rigid scheme was used to register all images within each exposure series, using natural neighbor interpolation with the gold particles as anchor points. The procedure increases the contrast and resolution of the examined macromolecules.

  6. Fabrication of SiGe quantum devices by electron-beam induced damage

    Science.gov (United States)

    Ryan, Joseph M.; Broers, Alec N.; Paul, Douglas J.; Pepper, Michael; Whall, Terry E.; Fernández, Juan M.; Joyce, Bruce A.

    1997-01-01

    The effects of electron beam irradiation damage has been investigated in Si/SiGe heterostructures. The damage to SiGe two-dimensional hole gases (2DHGs) was measured as a function of accelerating voltage and electron dose. For 40 keV electrons at a dose of 2 Cm-2(typical PMMA resist values), the material properties were not significantly altered. For 100 keV and higher energy electrons, the irradiated material became more resistive at 300 K as the electron energies were increased. The material became highly resistive at low temperatures and froze out at between 20 and 30 K. The 2DHGs also became more resistive at 300 K when the irradiation dose was increased. A number of narrow channel devices were fabricated on high mobility SiGe two-dimensional electron gases (2DEGs) using the damage technique and gated using Schottky gates. Plateaux were observed in the conductance as a function of gate voltage. Random telegraph signals (RTSs) were observed from a 10μm-wide Hall bar irradiated with 300 keV electrons at a dose of105C m-2

  7. Low level RF systems for synchrotrons part II: High Intensity. Compensation of the beam induced effects

    CERN Document Server

    Baudrenghien, P

    2005-01-01

    The high intensity regime is reached when the voltage induced by the beam in the RF cavities is of an amplitude comparable to the desired accelerating voltage. In steady state this beam loading can be compensated by providing extra RF power. Transient beam loading occurs at injection or in the presence of a beam intensity that is not uniform around the ring. The transients are periodic at the revolution frequency. Without correction transient beam loading can be very harmful: The stable phase and bucket area will not be equal for all bunches. Strong beam loading often goes in pair with longitudinal instabilities because the RF cavities are a large contributor to the total ring impedance. The low level systems that reduce the effect of the transient beam loading will also increase the threshold intensity of the longitudinal instability caused by the cavity impedance at the fundamental RF frequency. Four classic methods are presented here: Feedforward, RF feedback, long delay feedback and bunch by bunch feedbac...

  8. 电压暂降对珠澳电网影响的仿真研究%Simulation Research on Influence on Zhuhai-Macao Power Grid by Voltage Sag

    Institute of Scientific and Technical Information of China (English)

    崔江静; 廖辰川; 彭显刚; 裴星宇; 吴熳红; 杨锐雄

    2016-01-01

    利用 PSD-BPA(power system department-Bonneville power administration,PSD-BPA)短路故障暂态仿真软件,以珠澳电网主网系统为研究对象,对珠澳电网不同站点发生三相短路故障引起的电压暂降进行仿真计算,并通过 ArcGIS (Arc Geographic Information System,ArcGIS)工具实现对电压暂降分布的可视化处理。仿真结果表明,珠海电网短路故障将对澳门电网产生较大的影响,其中输电通道发生短路故障对珠澳电网电压暂降的影响最严重且范围广,最后,结合珠澳电网整体情况对影响电压暂降因素进行分析并提出电网安全稳定运行的相关建议。%Taking the main network system of Zhuhai-Macao power grid as research object,power system department-Bon-neville power administration (PSD-BPA)short-circuit fault transient simulation software is used for simulating calculation on voltage sags caused by three-phase short-circuit faults of different sites of Zhuhai-Macao power grid,and ArcGIS tool is used to realize visualized process on distribution of voltage sags. Simulation results indicate that short-circuit faults of Zhuhai-Ma-cao power grid may cause great influence on Macao power grid and thereinto,short-circuit fault of power transmission chan-nel may have the most serious and a wide range of influence on voltage sags of Zhuhai-Macao power grid. Finally,this paper analyzes factors influencing voltage sags by combining the whole situation of Zhuhai-Macao power grid and proposes related suggestions about safe and stable operation of the power grid.

  9. Voltage sag source location based on instantaneous energy detection

    DEFF Research Database (Denmark)

    Chen, Zhe; Xinzhou, Dong; Wei, Kong

    2007-01-01

    Voltage sag is the major power quality problem, which could disrupt the operation of sensitive equipment. This paper presents the applications of instantaneous energy direction for voltage sag source detection. Simulations have been performed to provide the analysis for system with distributed ge...... generation units. The studies show that the presented method can effectively detect the location of the voltage sag source....

  10. Design and Simulation of High Voltage Direct Current Power System for Airplane Based on SVPWM%基于 SVPWM 的飞机高压直流电源系统的设计与仿真

    Institute of Scientific and Technical Information of China (English)

    李运; 李岩; 盛正印

    2015-01-01

    A novel high voltage direct current power system suitable for the airplane consisting of PMSG( per-manent magnet synchronous generator ) , PWM ( pulse width modulation ) rectifier and controller based on SVPWM( space vector pulse width modulation) was proposed.The system had many advantages such as sim-ple structure and high reliability.It can not only guarantee that the input current was sine wave, but also can still output stable high voltage direct current while the speed of the airplane or the load changed.Then the system was simulated, the results of the simulation were in line with the theory analysis.%提出了一种新颖的适用于飞机的高压直流电源系统,该系统由永磁同步发电机、 PWM整流器以及基于SVPWM的控制器组成,具有结构简单、可靠性高等优点,不仅可以保证输入电流为标准正弦波,而且在飞机转速发生变化或者突加突卸负载的情况下,依然可以输出稳定高压直流。然后对该系统进行了仿真,仿真结果与理论分析一致。

  11. A low voltage CMOS low drop-out voltage regulator

    Science.gov (United States)

    Bakr, Salma Ali; Abbasi, Tanvir Ahmad; Abbasi, Mohammas Suhaib; Aldessouky, Mohamed Samir; Abbasi, Mohammad Usaid

    2009-05-01

    A low voltage implementation of a CMOS Low Drop-Out voltage regulator (LDO) is presented. The requirement of low voltage devices is crucial for portable devices that require extensive computations in a low power environment. The LDO is implemented in 90nm generic CMOS technology. It generates a fixed 0.8V from a 2.5V supply which on discharging goes to 1V. The buffer stage used is unity gain configured unbuffered OpAmp with rail-to-rail swing input stage. The simulation result shows that the implemented circuit provides load regulation of 0.004%/mA and line regulation of -11.09mV/V. The LDO provides full load transient response with a settling time of 5.2μs. Further, the dropout voltage is 200mV and the quiescent current through the pass transistor (Iload=0) is 20μA. The total power consumption of this LDO (excluding bandgap reference) is only 80μW.

  12. Implementation of Dynamic Voltage Restorer for Mitigation of Voltage Sag

    Directory of Open Access Journals (Sweden)

    K.Vinod Kumar

    2013-07-01

    Full Text Available Power quality is one of major concerns in the present. It has become important, especially with the introduction of sophisticated devices, whose performance is very sensitive to the quality of power supply. The dynamic voltage restorer (DVR is one of the modern devices used in distribution systems to improve the power quality. In this paper, emergency control in distribution systems is discussed by using the proposed multifunctional DVR control strategy.Also, themultiloop controller using the Posicast and P+Resonant controllers is proposed in order to improve the transient response and eliminate the steady state error in DVR response,respectively.The proposed process is applied to some riots in load voltage effected by induction motors starting, and a three-phase short circuit fault. The three-phase short circuits, and the large induction motors are suddenly started then voltage sags areoccurred.The innovation here is that by using the Multifunctional Dynamic Voltage Restorer, improve the power quality in distribution side. Simulation results show the capability of the DVR to control the emergency conditions of the distribution systems by using MATLAB/Simulink software.

  13. Influence of Dynamic Properties of Nonlinear Over-Voltage Limiter on Over-Voltage Limitation in Distribution Networks

    Directory of Open Access Journals (Sweden)

    A. N. Bokhan

    2009-01-01

    Full Text Available One of the most efficient means of over-voltage reduction in arcing ground short-circuits is an application of   a nonlinear over-voltage limiter. It is necessary to take into account dynamic properties of the nonlinear over-voltage limiter in order to ensure authentic simulation of  over-voltage in the network A dynamic model of  the non-linear over-voltage limiter which takes a time lag constant   τ  into account during transition of the nonlinear over-voltage limiter into conducting state has been developed in the paper.

  14. A robust and fast generic voltage sag detection technique

    DEFF Research Database (Denmark)

    L. Dantas, Joacillo; Lima, Francisco Kleber A.; Branco, Carlos Gustavo C.;

    2015-01-01

    In this paper, a fast and robust voltage sag detection algorithm, named VPS2D, is introduced. Using the DSOGI, the algorithm creates a virtual positive sequence voltage and monitories the fundamental voltage component of each phase. After calculating the aggregate value in the o:;3-reference frame......, the algorithm can rapidly identify the starting and the ending of symmetric and asymmetric voltage sags, even if there are harmonics on the grid. Simulation and experimental results are given to validate the proposed algorithm....

  15. Voltage Sag Source Location Based on Instantaneous Energy Detection

    DEFF Research Database (Denmark)

    Chen, Zhe; Kong, Wei; Dong, Xinzhou

    2008-01-01

    Voltage sag is a major power quality problem, which could disrupt the operation of voltage-sensitive equipment. This paper presents the method based on variation components-based instantaneous energy for voltage sag source detection. Simulations have been performed to provide the thorough analysi...... for system with distributed generation units. The studies show that the presented method can effectively detect the location of voltage sag source....

  16. 基于优化 SVPWM 三相 VSR 的仿真与研究%Simulation and study of three-phase voltage-source rectifier (VSR) based on an optimized SVPWM

    Institute of Scientific and Technical Information of China (English)

    樊英杰; 张开如; 韩璐; 狄东照; 鲁金生

    2015-01-01

    The topology structure of three-phase voltage-source PWM rectifier( VSR) and the basic principle of voltage oriented control( VOC) were presented.In view of the shortage of the traditional space vector pulse width modulation ( SVPWM) algorithm applied in three-phase VSR, this paper puts forward an optimized SVPWM, by which the sector can be judged according to the rotating argument of voltage space vector, and the function time of basic voltage vector can be calculated based on the three-phase voltage difference computation.Compared with the former two methods, the coordinate transformation and trigonometric calculation are completely omitted and the algorithm steps are simpli-fied in the optimized SVPWM.The validity and practicability can be verified through the simulation of VOC system with MATLAB/SIMULINK, which provides the basis for the hardware design of the improved three-phase VSR.%介绍了三相电压型PWM整流器(VSR)的拓扑结构和电压定向控制(VOC)的基本原理。针对三相VSR传统中电压空间矢量( SVPWM)算法的缺陷性,提出了一种优化SVPWM调制方法。该方法利用电压空间矢量旋转的幅角来判断扇区,并由相电压的电压差值计算基本电压矢量的作用时间,完全省略了坐标变换和三角函数计算,化简了SVPWM算法步骤。经过MATLAB/SIMULINK建立电压定向控制( VOC)仿真模型,可以证明该优化SVPWM算法的正确性,为改进三相VSR的硬件设计提供了依据。

  17. Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Porrati, F.; Sachser, R.; Huth, M. [Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany); Gazzadi, G. C. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); Frabboni, S. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); FIM Department, University of Modena and Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy)

    2016-06-21

    Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.

  18. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  19. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  20. Modeling and Simulating for Output Voltage of Piezoelectric Energy Harvester%微型之字形压电式能量收集器输出电压的建模和仿真∗

    Institute of Scientific and Technical Information of China (English)

    李如春; 征琦; 施朝霞

    2015-01-01

    In order to effectively solve the power problem of wireless sensor network node,zigzag microstructure for piezoelectric energy harvester is proposed. Compared to the traditional straight cantilever,this structure is equivalent to increase the length of the piezoelectric beam,reduces the natural vibration frequency of the system. To establish the constitutive equations and forced vibration equations of zigzag piezoelectric cantilever,the output voltage expres-sion is derived. Based on structure of zigzag cantilever,the harmonic response analysis is simulated by ANSYS soft-ware. Simulation results show that the output voltage is present extremes in the order natural vibration frequencies,it is in accord with the results of theoretical analysis;the output voltage amplitude increases when piezoelectric beam length decreases,with the increase of the piezoelectric beam width,the output voltage increases,that is non-linear relationship;when the length and thickness of quality block,the base layer thickness decrease,the output voltage will increase. Based on the structure size proposed in the paper, the zigzag cantilever composed of 10 straight beams,in the first-order natural vibration frequencies,the output voltage is up to 10 V,it meets the actual power re-quirements of wireless sensor network nodes,proves the validity of the zigzag piezoelectric cantilever structure.%为了有效解决无线传感器网络节点的供电难题,提出之字形结构的微型压电式能量收集器。相比于传统的直悬臂梁,此结构等效加大了压电梁的长度,降低了系统的固有振动频率。建立了之字形压电梁的本构方程和受迫振动方程,推导得到其输出电压的频域表达式。基于之字形压电梁的结构,利用ANSYS软件对其进行了谐响应分析。仿真结果表明,压电梁的输出电压在各阶固有振动频率处存在极值,符合理论分析的结果;输出电压大小随压电梁长度增加而降低,随压电梁宽

  1. Analysis on the Simulation of Interphase Power Controller Over-voltage and Its Protection%相间功率控制器过电压及其保护的仿真分析

    Institute of Scientific and Technical Information of China (English)

    李娟; 郑明; 张乐斌; 陈继军

    2011-01-01

    针对相间功率控制器(interphase power controller,IPC)在潮流控制过程中过电压及其保护的问题,基于相间功率控制器的基本结构原理,建立了电压与元件参数之间关系的数学模型,探讨了IPC过电压出现的原因及其保护系统的组成,并以两电网带IPC 240联络线为例采用Matlab中的Simulink搭建了仿真模型,进行了各种运行状态下的过电压及其保护的仿真分析.结果表明:正常运行时调节IPC的参数超过一定的范围会引起过电压;IPC端口开路时产生的谐振过电压是各种运行状态下最严重的;由于受断路器动作的影响,单相接地短路故障引起暂态过电压是各种短路故障中最严重的.在各种运行状态的过电压保护仿真中,IPC端口并联氧化物限压器(metal oxide varistors,MOV)及IPC电容、电感元件两端并联带触发间隙和旁路开关的MOV与断路器配合均能起到有效的过电压保护作用,严重情况下MOV并联的间隙电路被触发后能保护MOV.%The problem of over-voltage and its protection of interphase power controller (IPC) during controlling power flow were analyzed. A mathematical model of relationship between voltage and component parameters was established based on the basic theory of IPC construction, then the reasons of over-voltage and protection component were discussed. The simulation model of two networks with IPC 240 tie-line was established to analyze the problem using the Simulink model of MATLAB. The results show that over-voltage may be caused if adjusting the parameters of IPC beyond the certain scope , the resonance over-voltage values are maximal with IPC port opening, and the most severe transient over-voltage occurs on single phase to ground for action of breakers. Consequently, metal oxide varistors (MOV) are installed at the IPC port, and IPC capacitive and inductive branch are combined with circuit breakers parallel MOV with a triggered gap and bypass circuit

  2. Transformerless DC-DC Converter Using Cockcroft-Walton Voltage Multiplier to Obtain High DC Voltage

    Directory of Open Access Journals (Sweden)

    Meghana G Naik,

    2014-11-01

    Full Text Available In the present scenario the use of transformer for high voltages in converter circuit reduces the overall operating efficiency due to leakage inductance and use of transformer also increases the operational cost. . Therefore the proposed system is implemented with transformer less DC-DC converter so as to obtain high DC voltage with the use of nine stage Cockcroft-Walton (CW voltage multiplier. The proposed converter operates in CCM (continuous conduction mode, so that the converter switch stress, the switching losses are reduced. The DC voltage at the input of the proposed model is low and is boosted up by boost inductor (Ls in DC-DC converter stage and performs inverter operation. The number of stages in CW-voltage multiplier circuit is applied with low input pulsating DC (AC Voltage voltage where it is getting converted to high DC output voltage. The proposed converter switches operates at two independent frequencies, modulating (fsm andalternating (fsc frequency. The fsm operates at higher frequency of the output while the fsc operates at lower frequency of the desired output voltage ripple and the output ripples can be adjusted by the switch Sc1 and Sc2. The regulation of the output voltage is achieved by controlling the Duty ratio.The simulation is carried over by the MATLABSIMULINK.

  3. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  4. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  5. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  6. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    OpenAIRE

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar; Cecati, Carlo

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbala...

  7. Plasmonic Gold Helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits

    CERN Document Server

    Haverkamp, Caspar; Jäckle, Sara; Manzoni, Anna; Christiansen, Silke

    2016-01-01

    Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most no...

  8. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    Directory of Open Access Journals (Sweden)

    Rachel M. Thorman

    2015-09-01

    Full Text Available Focused electron beam induced deposition (FEBID is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (3, Pt(PF34, Co(CO3NO, and W(CO6. Through these case studies, it is evident that this combination of studies can provide valuable insight into potential mechanisms governing deposit formation in FEBID. Although further experiments and new approaches are needed, these studies are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimized FEBID precursors.

  9. Electron-Beam-Induced Antiphase Boundary Reconstructions in a ZrO2-LSMO Pillar-Matrix System.

    Science.gov (United States)

    Zhou, Dan; Sigle, Wilfried; Kelsch, Marion; Habermeier, Hanns-Ulrich; van Aken, Peter A

    2016-09-14

    The availability of aberration correctors for the probe-forming lenses makes simultaneous modification and characterization of materials down to atomic scale inside a transmission electron microscopy (TEM) realizable. In this work, we report on the electron-beam-induced reconstructions of three types of antiphase boundaries (APBs) in a probe-aberration-corrected TEM. With the utilization of high-angle annular dark-field scanning transmission electron microscopy (STEM), annular bright-field STEM, and electron energy-loss spectroscopy, the motion of both heavy element Mn and light element O atomic columns under moderate electron beam irradiation are revealed at atomic resolution. Besides, Mn segregated in the APBs was observed to have reduced valence states which can be directly correlated with oxygen loss. Charge states of the APBs are finally discussed on the basis of these experimental results. This study provides support for the design of radiation-engineering solid-oxide fuel cell materials.

  10. Impurity heterogeneity in natural pyrite and its relation to internal electric fields mapped using remote laser beam induced current

    Energy Technology Data Exchange (ETDEWEB)

    Laird, Jamie S., E-mail: csirojamie@gmail.com [CSIRO, Earth Science and Resource Engineering, Clayton, Victoria (Australia); Centre of Excellence in Ore Deposits (CODES), University of Tasmania, Hobart, Tasmania (Australia); School of Physics, University of Melbourne, Parkville 3010, Victoria (Australia); Large, Ross [Centre of Excellence in Ore Deposits (CODES), University of Tasmania, Hobart, Tasmania (Australia); Ryan, Chris G. [CSIRO, Earth Science and Resource Engineering, Clayton, Victoria (Australia); Centre of Excellence in Ore Deposits (CODES), University of Tasmania, Hobart, Tasmania (Australia); School of Physics, University of Melbourne, Parkville 3010, Victoria (Australia)

    2013-07-01

    Regions of band-bending in naturally occurring semiconducting sulfides are thought to drive electrochemical reactions with passing fluids. Metal bearing fluids within the right pH range interact with the electric fields at the surface resulting in precious metal ore genesis, even in under-saturated solutions. Metal reduction at the surface occurs via field assisted electron transfer from the semiconductor bulk to the ion in solution via surface states. Better understanding the role these regions and their texturing play on nucleating ore growth requires imaging of electric field distributions near the sulfide surface and correlation with underlying elemental heterogeneity. In this paper we discuss PIXE measurements made on the CSIRO Nuclear Microprobe and correlate elemental maps with laser beam induced current maps of the electric field distribution.

  11. Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

    2009-05-15

    In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

  12. High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers

    CERN Document Server

    Shmidt, N M; Usikov, A S; Yakimov, E B; Zavarin, E E

    2002-01-01

    Electron-beam-induced-current (EBIC) investigations of GaN structures grown by metal-organic chemical vapour deposition on (0001) sapphire substrates have been carried out. It is shown that the widths of the EBIC profiles for individual extended defects can be as small as about 100 nm. This width is observed to decrease with decreasing diffusion length and/or with increasing electron beam energy. The high spatial resolution is explained by the small diffusion length in the samples under study. The diffusion length is small even in structures with dislocation densities of about 10 sup 8 cm sup - sup 3 and carrier mobilities of about 600 cm sup 2 V sup - sup 1 s sup - sup 1 at 300 K and 1800 cm sup 2 V sup - sup 1 s sup - sup 1 at 125 K.

  13. Voltage Mode-to-Current Mode Transformation

    Directory of Open Access Journals (Sweden)

    Tejmal S. Rathore

    2012-10-01

    Full Text Available This paper proposes a procedure for converting a class of Op Amp-, FTFN-, CC- and CFAbased voltage mode circuits to corresponding current mode circuits without requiring any additional circuit elements and finally from Op Amp-based voltage mode circuits to any of the FTFN, CC and CFA current mode circuits. The latter circuits perform better at high frequency than the former ones. The validity of the transformation has been checked on simulated circuits with PSPICE.

  14. Characterizing a multi-MeV e-beam induced plasma through visible spectroscopy and imaging

    Science.gov (United States)

    D'Almeida, Thierry; Ribiere, Maxime; Maisonny, Rémi; Ritter, Sandra; Plouhinec, Damien; Auriel, Gérard

    2016-10-01

    High energy electrons interaction and propagation mechanisms in solid targets have a broad range of applications in high energy density physics. The latter include fast ignition for inertial fusion research, production of ultra-high mechanical stress levels, plasma interactions with e-beam particles in electron diodes, radiative hydrodynamic models...This paper presents the results from recent experiments conducted on the multi-MeV generator ASTERIX operated at CEA-Gramat. This high flux density electron beam was launched from an aluminum cathode onto an aluminum-tantalum target for voltage and current of 2.4 MeV and 55 kA, respectively. A set of optical diagnostics were fielded in all of the experiments, including a UV-visible spectrometers and a fast imaging. The imaging data obtained during the experiment allowed for the ablated species velocity to be determined. based on spectroscopic analysis, the light emission was attributed to aluminum and tantalum excited atoms and ions. The analysis of this time-integrated spectrum based on radiative transfer model clearly unveiled two distinct regions of the plasma over its expansion: a hot core surrounded by a cold vapor. A quantitative analysis of these results is presented.

  15. Thon rings from amorphous ice and implications of beam-induced Brownian motion in single particle electron cryo-microscopy.

    Science.gov (United States)

    McMullan, G; Vinothkumar, K R; Henderson, R

    2015-11-01

    We have recorded dose-fractionated electron cryo-microscope images of thin films of pure flash-frozen amorphous ice and pre-irradiated amorphous carbon on a Falcon II direct electron detector using 300 keV electrons. We observe Thon rings [1] in both the power spectrum of the summed frames and the sum of power spectra from the individual frames. The Thon rings from amorphous carbon images are always more visible in the power spectrum of the summed frames whereas those of amorphous ice are more visible in the sum of power spectra from the individual frames. This difference indicates that while pre-irradiated carbon behaves like a solid during the exposure, amorphous ice behaves like a fluid with the individual water molecules undergoing beam-induced motion. Using the measured variation in the power spectra amplitude with number of electrons per image we deduce that water molecules are randomly displaced by a mean squared distance of ∼1.1 Å(2) for every incident 300 keV e(-)/Å(2). The induced motion leads to an optimal exposure with 300 keV electrons of 4.0 e(-)/Å(2) per image with which to observe Thon rings centred around the strong 3.7 Å scattering peak from amorphous ice. The beam-induced movement of the water molecules generates pseudo-Brownian motion of embedded macromolecules. The resulting blurring of single particle images contributes an additional term, on top of that from radiation damage, to the minimum achievable B-factor for macromolecular structure determination.

  16. Development of a Technique for Representing Lightning Arresters in the Surge Simulations based on the FDTD Method and its Application to the Calculation of Lightning-Induced Voltages on a Distribution Line

    Science.gov (United States)

    Tatematsu, Akiyoshi; Noda, Taku

    Recently, the FDTD (Finite Difference Time Domain) method, which directly solves Maxwell's equations, has been applied to lightning surge problems involving electrical wires in three-dimensional arrangements, such as power and telecommunication circuits. Lightning arresters are installed to protect the circuits from abnormal voltages due to lightning, for example. We have already proposed a technique for representing a lightning arrester in the FDTD method. However, this technique simply represents the V-I characteristics of the arrester using just three parameters and requires a method for avoiding the numerical oscillation due to the nonlinear characteristics of the arrester. In this paper, we propose a new technique for representing the V-I characteristics of the arrester in detail using the piecewise linear function defined by several points and for improving the numerical stability without the method for avoiding the numerical oscillation. Using a test circuit, the proposed technique is validated by comparing the results calculated by the FDTD method with those by the EMTP (ElectroMagnetic Transients Program) which is a circuit-theory-based simulation program. Finally, as an example of applying the proposed technique, we calculate lightning-induced voltages on a distribution line with a lightning arrester. The calculated results by the FDTD method agree well with those by a conventional method based on circuit theroy.

  17. 基于Matlab的弧光接地过电压仿真研究%Simulation Research of Arc Grounding Over-Voltage Based on Matlab

    Institute of Scientific and Technical Information of China (English)

    王希平

    2012-01-01

    结合工频熄弧理论,利用Matlab电力系统工具箱(PSB)建立10kV配电网仿真模型,对中性点不接地、经消弧线圈接地和中性点经小电阻接地三种接地方式下的弧光过电压现象进行仿真分析比较,指出了经消弧线圈接地方式是目前比较合理的接地方式,适应智能配电网建设。%Combined with the power frequency arc extinction theory, the lOkV distribution network is established by the power system toolbox (PSB) of Matlab software. The phenomenon of arc grounding over-voltage is analyzed based on three grounding types, including isolated neutral system, neutral grounding via arc suppression coil and neutral grounding via low resistance. It pointed out the arc suppression coil grounding method is a reasonable method that adapt to the construction of intelligent distribution network.

  18. Unified Power Quality Conditioner for voltage and current compensation

    Directory of Open Access Journals (Sweden)

    P.Annapandi

    2012-07-01

    Full Text Available This paper deals with a Unified Power Quality Conditioner (UPQC for load balancing, power factorcorrection, voltage regulation, voltage and current harmonics mitigation, mitigation of voltage sag, swelland voltage dip in a three-phase three-wire distribution system for different combinations of linear and nonlinear loads.The unified power quality conditioner (UPQC is a combination of back to back connected shunt and series active power filters (APFs to a common DC link voltage, which compensates voltage and current based distortions, independently.Using instantaneous active and reactive Power theory ,harmonic detection, reactive power compensation, voltage sag and swell have been simulated and the results are analyzed. The operation and capability of the proposed system was analyzed through simulations with MATLAB / SIMULINK.

  19. Simulation of manoeuvres in capacitor banks for a typical medium voltage network; Simulacion de maniobras en bancos de capacitores en una red de media tension tipica

    Energy Technology Data Exchange (ETDEWEB)

    Viollaz, F.; Corasaniti, F. [Universidad Nacional de La Plata (UNLP), Buenos Aires (Argentina). Facultad de Ingenieria. Inst. de Investigaciones Tecnologicas para Redes y Equipos Electricos (IITREE-LAT)]. E-mail: fviollaz@iitree.ing.unlp.edu.ar

    2001-07-01

    This paper presents the simulation results of electromagnetic transients reproducing manoeuvres performed on capacitor banks. Energization and bank disconnection manoeuvres were analysed for the evaluation design the installed equipment. However, posterior evaluations demonstrated the existence of particularly critical conditions for the manoeuvre carrying out where elevated over currents can appears which exceed the maximum normalized values.

  20. Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Ubaldi, F; Pozzi, G [Department of Physics, University of Bologna, 40127 Bologna (Italy); Kasama, T; Dunin-Borkowski, R E [Center for Electron Nanoscopy, Technical University of Denmark, Lyngby (Denmark); McCartney, M R [Department of Physics, Arizona State University, Tempe, AZ 85287-1504 (United States); Newcomb, S B, E-mail: ubaldi@bo.imm.cnr.i [Sonsam Limited, Glebe Laboratories, Newport, Co. Tipperary (Ireland)

    2010-02-01

    Off-axis electron holography has been used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope using focused ion beam milling. In reconstructed phase images, regions of silicon oxide that are located between metal contacts show unexpected elliptical phase contours centered several hundreds of nm from the specimen edge. The experimental images are compared with simulations performed using three-dimensional calculations of the electrostatic potential inside and outside the specimen, which take into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen and the external electrostatic fringing field.

  1. L{sub p} norm approaches for estimating voltage flicker

    Energy Technology Data Exchange (ETDEWEB)

    Inan, Aslan [Department of Electrical Engineering, Faculty of Electrical-Electronics, Yildiz Technical University, Istanbul (Turkey); Bakroun, Maher [Antrim Crescent, Toronto, Ontario (Canada); Heydt, Gerald T. [Fulton School of Engineering, Arizona State University, Tempe, AZ (United States)

    2010-12-15

    It is important to accurately estimate instantaneous voltage flicker magnitudes and frequencies in order to correctly evaluate voltage fluctuations. Voltage flicker is a problem in electric power quality. Different approaches used to determine the magnitude of the voltage flicker have been presented: measurement methods generally use a flickermeter device. Simulation methods require a computer model of the disturbing load and the flickermeter. Calculation methods necessitate a simplified empirical formula. Estimation algorithms are based on the estimation of the voltage flicker components. In this paper, two models of voltage flicker are discussed: L{sub p} estimation algorithms utilizing L{sub 1}, L{sub 2} and L{sub {infinity}} norms are used to estimate the voltage magnitudes of the flicker signals as well as the fundamental voltage magnitude. The main result is that it is possible to design an L{sub p} estimator to identify flicker frequency and amplitude from time series measurements. (author)

  2. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  3. Simulation Study of Induced Voltage and Current of Power Transmission Line in Double Circuits on the Same Tower%同塔双回输电线路中感应电压和电流仿真研究

    Institute of Scientific and Technical Information of China (English)

    孔晨华; 杨建军; 山磊; 孔令新; 李正鹏

    2015-01-01

    同塔电路回线中,当发生一回线停电检修且另一回线路正常运行时,基于其所在输电线路间电磁感应及静电感应的作用,势必会出现检修时的感应电压和电流的现象,会对低压线路上的维修人员造成威胁,针对此,文章将以同塔双回的500 kV高压输电线路为例,并结合对EMTP仿真软件的利用,分析了不正常运行情况下的感应电压、电流,验证了仿真计算结果的有效性。%In line with circuit towers, when a time line outage maintenance and normal operation of different lines, based on its transmission line electromagnetic induction and the effect of electrostatic induction, will appear the phenomenon of induction voltage and current, maintenance will pose a threat to the low-tension wire road maintenance personnel, for this. Taking the 500 kV transmission lines with double towers as an example, combined with the use of EMTP simulation software, the abnormal operation of induction voltage, current were analyzed, the validity of the simulation calculation results was veriifed.

  4. Environmental TEM Study of Electron Beam Induced Electrochemistry of Pr0.64Ca0.36MnO3 Catalysts for Oxygen Evolution

    DEFF Research Database (Denmark)

    Mildner, Stephanie; Beleggia, Marco; Mierwaldt, Daniel

    2015-01-01

    Environmental transmission electron microscopy (ETEVI) studies offer great potential for gathering atomic scale information on the electronic state of electrodes in contact with reactants. It also poses big challenges due to the impact of the high energy electron beam. In this article, we present...... of beam induced potentials is an important step for future controlled electrochemical experiments in an ETEM....

  5. Electron postgrowth irradiation of platinum-containing nanostructures grown by electron-beam-induced deposition from Pt(PF3)4

    NARCIS (Netherlands)

    Botman, A.; Hagen, C.W.; Li, J.; Thiel, B.L.; Dunn, K.A.; Mulders, J.J.L.; Randolph, S.; Toth, M.

    2009-01-01

    The material grown in a scanning electron microscope by electron beam-induced deposition (EBID) using Pt(PF3)4 precursor is shown to be electron beam sensitive. The effects of deposition time and postgrowth electron irradiation on the microstructure and resistivity of the deposits were assessed by t

  6. Studies of Beam Induced Electron Cloud Resonances in Dipole Magnetic Fields

    CERN Document Server

    Calvey, J R; Makita, J; Venturini, M

    2016-01-01

    The buildup of low energy electrons in an accelerator, known as electron cloud, can be severely detrimental to machine performance. Under certain beam conditions, the beam can become resonant with the cloud dynamics, accelerating the buildup of electrons. This paper will examine two such effects: multipacting resonances, in which the cloud development time is resonant with the bunch spacing, and cyclotron resonances, in which the cyclotron period of electrons in a magnetic field is a multiple of bunch spacing. Both resonances have been studied directly in dipole fields using retarding field analyzers installed in the Cornell Electron Storage Ring (CESR). These measurements are supported by both analytical models and computer simulations.

  7. Voltage Unbalance Compensation with Smart Three-phase Loads

    DEFF Research Database (Denmark)

    Douglass, Philip; Trintis, Ionut; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design, proof-of-concept simulations and laboratory test of an algorithm for controlling active front-end rectifiers to reduce voltage unbalance. Using inputs of RMS voltage, the rectifier controller allocates load unevenly on its 3 phases to compensate for voltage unbala...... is caused by asymmetrical loads. These results suggest that the optimal algorithm to reduce system unbalance depends on which system parameter is most important: phase-neutral voltage unbalance, phase-phase voltage unbalance, or current unbalance....

  8. Hierarchical Control Scheme for Voltage Unbalance Compensation in Islanded Microgrids

    DEFF Research Database (Denmark)

    Savaghebi, Mehdi; Guerrero, Josep M.; Jalilian, Alireza;

    2011-01-01

    active and reactive power controllers, virtual impedance loop and voltage and current controllers. The secondary level is designed to compensate the voltage unbalance at the load bus (LB) of the islanded microgrid. Also, restoration of LB voltage amplitude and microgrid frequency to the rated values...... is considered in the secondary level. These functions are achieved by proper control of distributed generators (DGs) interface converters. The presented simulation results show the effectiveness of the proposed control structure in compensating the voltage unbalance and restoring the voltage amplitude...

  9. Voltage Support from Electric Vehicles in Distribution Grid

    DEFF Research Database (Denmark)

    Huang, Shaojun; Pillai, Jayakrishnan Radhakrishna; Bak-Jensen, Birgitte

    2013-01-01

    , the combination of these two methods is also examined for controlled EV charging. Simulation results show that the combination of the two individual supporting methods has the best performance in terms of voltage regulation as well as improving EV penetration level at weak distribution grids.......The paper evaluates the voltage support functions from electric vehicles (EVs) on a typical Danish distribution grid with high EV penetration. In addition to the popular voltage control modes, such as voltage droop charging (low voltage level leads to low charging power) and reactive power support...

  10. Low energy ion beam induced changes in structural and thermal properties of polycarbonate

    Science.gov (United States)

    Reheem, A. M. Abdel; Atta, A.; Maksoud, M. I. A. Abdel

    2016-10-01

    The aim of the present study is extended for obtaining relation between the collision of ion beam with polycarbonate polymer (PC) and the introduced modification of technological applications. Polycarbonate films are irradiated by a 6 keV argon ion beam extracted from locally design cold cathode ion source with different ion fluences. The films are characterized using X-ray Diffraction (XRD), Mechanical tester, Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). The increase in ion beam irradiation leads to an increase in the tensile strength and reduction in elongation at break for PC. TGA Analysis shows that the thermal decomposition temperature of irradiated polycarbonate changes with ion fluence. The DSC graphs show improvements in thermal stability with increase in the activation energy after ion beam irradiation. Ion penetration depths and distributions of scattered atoms are calculated using SRIM Monte Carlo simulation programs.

  11. Calculation of electron-beam induced displacement in thin films by using parameter-reduced formulas

    Science.gov (United States)

    Yan, Qiang; Chen, Di; Wang, Qingyu; Li, Zhongyu; Shao, Lin

    2017-03-01

    Based on the Mott cross sections of relativistic electron collisions with atoms, we calculate displacement creation by electron beams of arbitrary energies (up to 100 MeV) in thin films of arbitrary atomic numbers (up to Z = 90). In a comparison with Mont Carlo full damage cascade simulations, we find that total number of displacements in a film can be accurately estimated as the product of average displacements created per collision and average collision numbers in the film. To calculate average displacements per electron-atom collision, energy transfer from Mott cross section is combined with NRT model. To calculate collision numbers, mean deflection angles and multi-scattering theory are combined to extract collision number dependence on film thickness. For each key parameter, parameter-reduced formulas are obtained from data fitting. The fitting formulas provide a quick and accurate method to estimate radiation damage caused by electron beams.

  12. Dynamic Voltage Restorer Based on Space Vector Pulse Width Modulation Technique

    Directory of Open Access Journals (Sweden)

    B.N S P Venkatesh

    2011-07-01

    Full Text Available Power Quality problems encompass a wide range of disturbances such as voltage sags, swells, flicker,harmonics distortion and interruptions. The strategic deployment of custom power devices has been proposed asone of the means to protect sensitive loads from power quality problems such as voltage sags and swells. The Dynamic Voltage Restorer (DVR is a power electronic device that is used to inject 3-phase voltage in series and in synchronism with the distribution feeder voltages in order to compensate voltage sag and similarly itreacts quickly to inject the appropriate voltage component (negative voltage magnitude in order to compensate voltage swell. The principal component of the DVR is a voltage source inverter that generates three phase voltages and provides the voltage support to a sensitive load during voltage sags and swells. Pulse Width Modulation Technique is very critical for proper control of DVR. Sinusoidal Pulse Width Modulation (SPWM and Space Vector Pulse Width Modulation (SVPWM control techniques are used for controlling the DVR. Inthis work, the operation of DVR is presented and the control technique used for voltage source inverter is Space Vector PWM technique. Space vector PWM can utilize the better dc voltage and generates the fewer harmonic in inverter output voltage than Sinusoidal PWM technique. This work describes the DVR based on Space Vector PWM which provides voltage support to sensitive loads and is simulated by using MATLAB/SIMULINK. Simulation results show that the control approach is able to compensate for any type of voltage sags and swells.

  13. Low Voltage Analog Circuit Design Based on the Flipped Voltage Follower

    Directory of Open Access Journals (Sweden)

    Neeraj Yadav

    2012-03-01

    Full Text Available The desire for portability of electronics equipment generated a need for low power system in battery products like hearing aids, implantable cardiac pacemakers, cell phones and hand held multimedia terminals. Low voltage analog circuit design differs considerably from those of high voltage analog circuit design. This paper present the basic cell knows as “flipped voltage follower” for low voltage/ low power operation. The detailed classification of basic topologies derived from the FVF cell is presented and there is a low voltage current mirror based on FVF cell has been presented. All the Circuit has been simulated using Hspice tool 0.18µm CMOS Technology. Different quality factors such as frequency response, power consumption are considered. A compression also made between previous current mirror and new designed current mirror. The layout of the current mirror has been also designed using Cadence tool.

  14. Improving Low Voltage Ride Through Capability of Wind Generators Using Dynamic Voltage Restorer

    Science.gov (United States)

    Sivasankar, Gangatharan; Suresh Kumar, Velu

    2014-08-01

    The increasing wind power integration with power grid has forced the situation to improve the reliability of wind generators for stable operation. One important problem with induction generator based wind farm is its low ride through capability to the grid voltage disturbance. Any disturbance such as voltage dip may cause wind farm outages. Since wind power contribution is in predominant percentage, such outages may lead to stability problem. The proposed strategy is to use dynamic voltage controller (DVR) to compensate the voltage disturbance. The DVR provides the wind generator the ability to remain connected in grid and improve the reliability. The voltage dips due to symmetrical and unsymmetrical faults are considered for analysis. The vector control scheme is employed for fault compensation which uses software phase locked loop scheme and park dq0 transformation technique. Extensive simulation results are included to illustrate the control and operation of DVR.

  15. Voltage and frequency control in the Islanded portion of the CIGRE Low Voltage distribution network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak, Claus Leth; Buriro, Ehsan Ali

    2017-01-01

    imbalance in the islanded MG. The voltage and the frequency of the islanded MG can be restored to the permissible limits if the desired/exceeded amount of active and reactive power is injected/absorbed by the locally available sources in islanded MG. This paper proposes the control strategy which can...... by providing some ancillary services. The main focus of this paper is about the development of a control system for the islanded MG, the selection of Voltage-Frequency controller for the most suitable DG unit of the Low Voltage test network and the control of voltage and frequency in islanding condition. Under...... compensate the problems of the voltage and the frequency deviations in the islanded MG. The selection of the VF controller for the most suitable DG unit of the LV test network is also presented in this paper and effectiveness of the controllers is verified by presenting simulation results...

  16. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  17. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  18. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  19. FGMOS Based Voltage-Controlled Grounded Resistor

    Directory of Open Access Journals (Sweden)

    R. Pandey

    2010-09-01

    Full Text Available This paper proposes a new floating gate MOSFET (FGMOS based voltage-controlled grounded resistor. In the proposed circuit FGMOS operating in the ohmic region is linearized by another conventional MOSFET operating in the saturation region. The major advantages of FGMOS based voltage-controlled grounded resistor (FGVCGR are simplicity, low total harmonic distortion (THD, and low power consumption. A simple application of this FGVCGR as a tunable high-pass filter is also suggested. The proposed circuits operate at the supply voltages of +/-0.75 V. The circuits are designed and simulated using SPICE in 0.25-µm CMOS technology. The simulation results of FGVCGR demonstrate a THD of 0.28% for the input signal 0.32 Vpp at 45 kHz, and a maximum power consumption of 254 µW.

  20. CNFET Based Voltage Differencing Transconductance Amplifier

    Science.gov (United States)

    Laxya; Prasad, Dinesh; Mainuddin; Islam, S. S.

    2017-08-01

    In CMOS Technology basic Problem mainly includes dopant fluctuation, tunnelling effect and line edge roughness below 45nm technology. Carbon Nanotube based structures is better option for widen the Moore’s law due to its scalability channel electrostatics and higher mobility. In this manuscript we demonstrate an optimum design for linear property of CNTFET based VDTA at 32nm technology node. The proposed circuit consist of VDTA with CNTFET having two voltage input and two current outputs so that it works as voltage and transconductance operation to obtain the high performance. The minimum supply voltages of ±0.9V with 32nm technology mode are used. The CNTFET-VDTA performance is simulated on HSPICE. In this paper CNFET-based VDTA provides better results of DC transfer characteristics as compared with CMOS. All the simulation results are performed on HSPICE.

  1. In situ ion-beam-induced luminescence analysis for evaluating a micrometer-scale radio-photoluminescence glass dosimeter

    Science.gov (United States)

    Kawabata, Shunsuke; Kada, Wataru; Parajuli, Raj Kumar; Matsubara, Yoshinori; Sakai, Makoto; Miura, Kenta; Satoh, Takahiro; Koka, Masashi; Yamada, Naoto; Kamiya, Tomihiro; Hanaizumi, Osamu

    2016-06-01

    Micrometer-scale responses of radio-photoluminescence (RPL) glass dosimeters to focused ionized particle radiation were evaluated by combining ion-beam-induced luminescence (IBIL) and proton beam writing (PBW) using a 3 MeV focused proton microbeam. RPL phosphate glass dosimeters doped with ionic Ag or Cu activators at concentrations of 0.2 and 0.1% were fabricated, and their scintillation intensities were evaluated by IBIL spectroscopy under a PBW micropatterning condition. Compared with the Ag-doped dosimeter, the Cu-doped dosimeter was more tolerant of the radiation, while the peak intensity of its luminescence was lower, under the precise dose control of the proton microprobe. Proton-irradiated areas were successfully recorded using these dosimeters and their RPL centers were visualized under 375 nm ultraviolet light. The reproduction of the irradiated region by post-RPL imaging suggests that precise estimation of irradiation dose using microdosimeters can be accomplished by optimizing RPL glass dosimeters for various proton microprobe applications in organic material analysis and in micrometer-scale material modifications.

  2. High speed, intermediate resolution, large area laser beam induced current imaging and laser scribing system for photovoltaic devices and modules.

    Science.gov (United States)

    Phillips, Adam B; Song, Zhaoning; DeWitt, Jonathan L; Stone, Jon M; Krantz, Patrick W; Royston, John M; Zeller, Ryan M; Mapes, Meghan R; Roland, Paul J; Dorogi, Mark D; Zafar, Syed; Faykosh, Gary T; Ellingson, Randy J; Heben, Michael J

    2016-09-01

    We have developed a laser beam induced current imaging tool for photovoltaic devices and modules that utilizes diode pumped Q-switched lasers. Power densities on the order of one sun (100 mW/cm(2)) can be produced in a ∼40 μm spot size by operating the lasers at low diode current and high repetition rate. Using galvanostatically controlled mirrors in an overhead configuration and high speed data acquisition, large areas can be scanned in short times. As the beam is rastered, focus is maintained on a flat plane with an electronically controlled lens that is positioned in a coordinated fashion with the movements of the mirrors. The system can also be used in a scribing mode by increasing the diode current and decreasing the repetition rate. In either mode, the instrument can accommodate samples ranging in size from laboratory scale (few cm(2)) to full modules (1 m(2)). Customized LabVIEW programs were developed to control the components and acquire, display, and manipulate the data in imaging mode.

  3. Preliminary results on time-resolved ion beam induced luminescence applied to the provenance study of lapis lazuli

    Science.gov (United States)

    Czelusniak, C.; Palla, L.; Massi, M.; Carraresi, L.; Giuntini, L.; Re, A.; Lo Giudice, A.; Pratesi, G.; Mazzinghi, A.; Ruberto, C.; Castelli, L.; Fedi, M. E.; Liccioli, L.; Gueli, A.; Mandò, P. A.; Taccetti, F.

    2016-03-01

    This work will present preliminary results concerning the use of time-resolved ion beam induced luminescence applied to provenance studies of lapis lazuli. Measurements were performed at the pulsed beam facility at LABEC laboratory in Florence. Lapis lazuli is a semi-precious gemstone, used as ornament since the early civilizations that can be found in few places on Earth. The importance of this work lies in understanding the origin of various samples of lapis lazuli, from which it may be possible to gain insight into trade routes from ancient times. The samples studied in this work originated from Chile, Afghanistan, Tajikistan, Myanmar, and Siberia. The stones were irradiated with 3 MeV protons and the resulting luminescence was detected by a photomultiplier tube, whose output was acquired using a sampling digitizer VME module (CAEN/V1720). Wavelength discrimination was performed at 430 nm utilizing a range of beam currents. The results showed that, by changing the beam current intensity, one can study different features of lapis lazuli, and this may aid in distinguishing lapis lazuli from different provenances.

  4. Electron beam exposure mechanisms in hydrogen silsesquioxane investigated by vibrational spectroscopy and in-situ electron beam induced desorption

    Energy Technology Data Exchange (ETDEWEB)

    Olynick, D.L.; Cord, B.; Schipotinin, A.; Ogletree, D.F.; Schuck, P.J.

    2009-11-13

    Hydrogen Silsesquioxane (HSQ) is used as a high-resolution resist with resolution down below 10nm half-pitch. This material or materials with related functionalities could have widespread impact in nanolithography and nanoscience applications if the exposure mechanism was understood and instabilities controlled. Here we have directly investigated the exposure mechanism using vibrational spectroscopy (both Raman and Fourier transform Infrared) and electron beam desorption spectrocscopy (EBDS). In the non-networked HSQ system, silicon atoms sit at the corners of a cubic structure. Each silicon is bonded to a hydrogen atom and bridges 3 oxygen atoms (formula: HSiO3/2). For the first time, we have shown, via changes in the Si-H2 peak at ~;;2200 cm -1 in the Raman spectra and the release of SiHx products in EBID, that electron-bam exposed materials crosslinks via a redistribution reaction. In addition, we observe the release of significantly more H2 than SiH2 during EBID, which is indicative of additional reaction mechanisms. Additionally, we compare the behavior of HSQ in response to both thermal and electron-beam induced reactions.

  5. Measurements of the luminosity and normalised beam-induced background using the CMS Fast Beam Condition Monitor

    CERN Document Server

    Odell, Nathaniel Jay

    2012-01-01

    The CMS Beam Conditions and Radiation Monitoring system (BRM) is installed to protect the CMS detector from high beam losses and to provide feedback to the LHC and CMS on the beam conditions. The Fast Beam Condition Monitor (BCM1F), one of the sub-detectors in the BRM system, is installed inside the pixel volume close to the beam pipe and consists of two planes of 4 modules each located 1.8 m away from the IP, on both ends. It uses single-crystal CVD diamond sensors, radiation hard front-end electronics and an optical transmission of the signal. It is designed for single particle rate measurements, detecting both machine induced beam background and collision products on a bunch-by-bunch basis. Presented is the implementation of the normalized online beam-induced background measurement and the online instantaneous luminosity measurement. The method for determining the luminosity from the measured rates, including the absolute calibration using the Van der Meer scan, and the measurement performance will be d...

  6. Plasmonic gold helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits

    Science.gov (United States)

    Haverkamp, Caspar; Höflich, Katja; Jäckle, Sara; Manzoni, Anna; Christiansen, Silke

    2017-02-01

    Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most notably, electromagnetic modeling of the corresponding scattering spectra verified that the thickness and quality of the resulting gold shell ensures an optical response equal to that of pure gold nanostructures.

  7. High speed, intermediate resolution, large area laser beam induced current imaging and laser scribing system for photovoltaic devices and modules

    Science.gov (United States)

    Phillips, Adam B.; Song, Zhaoning; DeWitt, Jonathan L.; Stone, Jon M.; Krantz, Patrick W.; Royston, John M.; Zeller, Ryan M.; Mapes, Meghan R.; Roland, Paul J.; Dorogi, Mark D.; Zafar, Syed; Faykosh, Gary T.; Ellingson, Randy J.; Heben, Michael J.

    2016-09-01

    We have developed a laser beam induced current imaging tool for photovoltaic devices and modules that utilizes diode pumped Q-switched lasers. Power densities on the order of one sun (100 mW/cm2) can be produced in a ˜40 μm spot size by operating the lasers at low diode current and high repetition rate. Using galvanostatically controlled mirrors in an overhead configuration and high speed data acquisition, large areas can be scanned in short times. As the beam is rastered, focus is maintained on a flat plane with an electronically controlled lens that is positioned in a coordinated fashion with the movements of the mirrors. The system can also be used in a scribing mode by increasing the diode current and decreasing the repetition rate. In either mode, the instrument can accommodate samples ranging in size from laboratory scale (few cm2) to full modules (1 m2). Customized LabVIEW programs were developed to control the components and acquire, display, and manipulate the data in imaging mode.

  8. Preliminary results on time-resolved ion beam induced luminescence applied to the provenance study of lapis lazuli

    Energy Technology Data Exchange (ETDEWEB)

    Czelusniak, C. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Palla, L. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Pisa and Università di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Massi, M. [Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Carraresi, L.; Giuntini, L. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Re, A.; Lo Giudice, A. [Dipartimento di Fisica, Università di Torino & INFN Sezione di Torino, Via Giuria 1, 10125 Torino (Italy); Pratesi, G. [Museo di Storia Naturale, Università di Firenze, Via G. La Pira 4, 50121 Firenze (Italy); Mazzinghi, A. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Ruberto, C. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); Dipartimento di Chimica, Università di Firenze, Via della Lastruccia 1, 50019 Sesto Fiorentino, Firenze (Italy); Castelli, L. [Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Firenze, Via Sansone 1, I-50019 Sesto Fiorentino, Firenze (Italy); and others

    2016-03-15

    This work will present preliminary results concerning the use of time-resolved ion beam induced luminescence applied to provenance studies of lapis lazuli. Measurements were performed at the pulsed beam facility at LABEC laboratory in Florence. Lapis lazuli is a semi-precious gemstone, used as ornament since the early civilizations that can be found in few places on Earth. The importance of this work lies in understanding the origin of various samples of lapis lazuli, from which it may be possible to gain insight into trade routes from ancient times. The samples studied in this work originated from Chile, Afghanistan, Tajikistan, Myanmar, and Siberia. The stones were irradiated with 3 MeV protons and the resulting luminescence was detected by a photomultiplier tube, whose output was acquired using a sampling digitizer VME module (CAEN/V1720). Wavelength discrimination was performed at 430 nm utilizing a range of beam currents. The results showed that, by changing the beam current intensity, one can study different features of lapis lazuli, and this may aid in distinguishing lapis lazuli from different provenances.

  9. Multimodal backside imaging of a microcontroller using confocal laser scanning and optical-beam-induced current imaging

    Science.gov (United States)

    Finkeldey, Markus; Göring, Lena; Schellenberg, Falk; Brenner, Carsten; Gerhardt, Nils C.; Hofmann, Martin

    2017-02-01

    Microscopy imaging with a single technology is usually restricted to a single contrast mechanism. Multimodal imaging is a promising technique to improve the structural information that could be obtained about a device under test (DUT). Due to the different contrast mechanisms of laser scanning microscopy (LSM), confocal laser scanning microscopy (CLSM) and optical beam induced current microscopy (OBICM), a combination could improve the detection of structures in integrated circuits (ICs) and helps to reveal their layout. While OBIC imaging is sensitive to the changes between differently doped areas and to semiconductor-metal transitions, CLSM imaging is mostly sensitive to changes in absorption and reflection. In this work we present the implementation of OBIC imaging into a CLSM. We show first results using industry standard Atmel microcontrollers (MCUs) with a feature size of about 250nm as DUTs. Analyzing these types of microcontrollers helps to improve in the field of side-channel attacks to find hardware Trojans, possible spots for laser fault attacks and for reverse engineering. For the experimental results the DUT is placed on a custom circuit board that allows us to measure the current while imaging it in our in-house built stage scanning microscope using a near infrared (NIR) laser diode as light source. The DUT is thinned and polished, allowing backside imaging through the Si-substrate. We demonstrate the possibilities using this optical setup by evaluating OBIC, LSM and CLSM images above and below the threshold of the laser source.

  10. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes

    Science.gov (United States)

    Tu, F.; Drost, M.; Vollnhals, F.; Späth, A.; Carrasco, E.; Fink, R. H.; Marbach, H.

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ˜160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  11. Power system reconfiguration in a radial distribution network for reducing losses and to improve voltage profile using modified plant growth simulation algorithm with Distributed Generation (DG

    Directory of Open Access Journals (Sweden)

    R. Rajaram

    2015-11-01

    Full Text Available Network reconfiguration which is constrained non linear optimization problem has been solved for loss minimization, load balancing, etc. for last two decades using various heuristic search evolutionary algorithms like binary particle swarm optimization, neuro-fuzzy techniques, etc. The contribution of this paper lies in considering distributed generation which are smaller power sources like solar photovoltaic cells or wind turbines connected in the customer roof top. This new connection in the radial network has made unidirectional current flow to become bidirectional there by increasing the efficiency but sometimes reducing stability of the system. Modified plant growth simulation algorithm has been applied here successfully to minimize real power loss because it does not require barrier factors or cross over rates because the objectives and constraints are dealt separately. The main advantage of this algorithm is continuous guiding search along with changing objective function because power from distributed generation is continuously varying so this can be applied for real time applications with required modifications. This algorithm here is tested for a standard 33 bus radial distribution system for loss minimization and test results here shows that this algorithm is efficient and suitable for real time applications.

  12. P Voltage Control of DFIG with Two-Mass-Shaft Turbine Model Under Utility Voltage Disturbance

    Directory of Open Access Journals (Sweden)

    Hengameh Kojooyan Jafari

    2016-06-01

    Full Text Available Doubly fed induction generators as a variable speed induction generators are applied instead of other electric machines in wind power plants to be connected to the grid with flexible controllers. Nowadays one of the most important subjects in wind farms is control of output power delivered to the grid under utility disturbance. In this paper, a doubly-fed induction generator with external rotor resistance and power converters model as an external voltage source having an adjustable phase and amplitude with an ordinary turbine connected to one mass shaft model and also two mass shaft model, is used and controlled by a P voltage controller to control the output active power for typical high and low wind speeds under two conditions of utility disturbance; while time of disturbance is not too long to change the domain of external rotor voltage source and also while time is long and the domain of external rotor voltage decreases.Simulation results show that P voltage controller can control output active power under 27% stator voltage drop down for typical low wind speed and 11% stator voltage drop down for typical high wind speed in long time disturbance while 80% of rotor external voltage domain drops down under short time utility disturbance.

  13. Measurement of a power system nominal voltage, frequency and voltage flicker parameters

    Energy Technology Data Exchange (ETDEWEB)

    Alkandari, A.M. [College of Technological Studies, Electrical Engineering Technology Department, Shwiekh (Kuwait); Soliman, S.A. [Electrical Power and Machines Department, Misr University for Science and Technology, Cairo (Egypt)

    2009-09-15

    We present, in this paper, an approach for identifying the frequency and amplitude of voltage flicker signal that imposed on the nominal voltage signal, as well as the amplitude and frequency of the nominal signal itself. The proposed algorithm performs the estimation in two steps; in the first step the original voltage signal is shifted forward and backward by an integer number of sample, one sample in this paper. The new generated signals from such a shift together with the original one is used to estimate the amplitude of the original signal voltage that composed of the nominal voltage and flicker voltage. The average of this amplitude gives the amplitude of the nominal voltage; this amplitude is subtracted from the original identified signal amplitude to obtain the samples of the flicker voltage. In the second step, the argument of the signal is calculated by simply dividing the magnitude of signal sample with the estimated amplitude in the first step. Calculating the arccosine of the argument, the frequency of the nominal signal as well as the phase angle can be computing using the least error square estimation algorithm. Simulation examples are given within the text to show the features of the proposed approach. (author)

  14. Performance of Three-Arm Ac Automatic Voltage Regulator

    Directory of Open Access Journals (Sweden)

    T. Papinaidu

    2014-04-01

    Full Text Available In this paper the design and simulation of automatic voltage regulator (AVR is proposed. The AVR provides voltage buck and boost capability to eliminate power problems created by under voltage or over voltage fluctuations. It also protects against minor and severe spikes and surges that comprise over 80% of power problems. Over heating of components due to voltage swell is also avoided by using AVR. The switching losses are also reduced as only one arm among three arms is maintained at higher power frequencies depending on mode of operation. Moreover, there is no need to use large capacitor as a result the overall size of converter is also reduced. Hence, the output voltage of the AVR can be maintained at the specified voltage. Hence, the AVR is cost can be reduced, and the efficiency of the power convertor can be extended.

  15. 550 kV双断口交流滤波器断路器暂态恢复电压仿真%Simulation of Transient Recovery Voltage of 550 kV AC Filter Breaker with Double Breaks

    Institute of Scientific and Technical Information of China (English)

    施健; 罗兵; 傅明利; 厉天威; 曾向君; 贾磊; 张福增

    2016-01-01

    直流换流站安装有不同滤波次数的交流滤波器(AC filter,ACF),ACF断路器频繁操作以满足换流站无功补偿的需要,在开断大容性电流后断口承受交直流混合电压的共同作用,断口直流分压按电阻分布,而断口等效电阻受外界环境的影响,因此断口承受的电压可能会超过其绝缘能力。以国内典型的550 kV瓷柱式双断口小组滤波器断路器为例,利用PSCAD建立暂态恢复电压(TRV)仿真电路模型,对影响断口TRV分布的环境因素进行了仿真,仿真结果显示外界环境因素(如湿度、污秽、干湿不均等)对断口TRV影响较大,在特定环境条件下当断口绝缘电阻下降较大且两断口电阻值差异较大时,断口最大TRV值会接近或超过规范要求值,从而可能造成断口电弧重燃或闪络故障。%AC filters (ACFs)for different harmonics are installed in HVDC stations,they switch on and off very often with circuit breakers for reactive power compensation. ACF breakers bear transient recovery voltages (TRV)comprising AC and DC voltages after switching off large capacitive current,because the DC voltage component is decided and divided by resistance which is influenced by the ambient environment of porcelain breaker external insulation,the TRV may exceed the insulation requirement. Using a typical 550 kV AC filter procelain breaker with two breaks used in HVDC stations as an example,a simulation model of TRV is established based on PSCAD to simulate the influencing factors of TRV. The simulation results show that the ambient environment,such as humidity, dirt and dry zone,can seriously affect the TRV of breaks. With specific ambient environment conditions,when the break resistance decreases and the diffence between the two break resistances is large,the maximum break TRV may approach or even exceed the theshhold value,which will result in breaker restrike or flashover.

  16. Dynamic Simulation of Induction Motor Fed by SVPWM Voltage Source Inverter%SVPWM电压源逆变器供电异步电动机的动态仿真

    Institute of Scientific and Technical Information of China (English)

    张贻旭; 谢卫; 屈鲁; 卢颖娟

    2012-01-01

    The dynamic model of three-phase induction motor is established in the d-q coordinate. Sinusoidal pulse width modulation (SPWM) technique and space vector pulse width modulation (SVPWM) technique which used to control induction motor are introduced. Dynamic simulation model of three - phase induction motor fed by SPWM and SVPWM voltage source inverter are established respectively, and the simulation results under these two control techniques are comparatively analyzed. The simulation results demonstrate that SVPWM induction motor drive system can start faster, the torque ripple is smaller and the stator current harmonics is smaller compared with SPWM control. The system has good steady and dynamic performance.%建立了三相异步电动机在d-q坐标系下的动态数学模型,并介绍了控制异步电动机运行的两种控制技术:正弦波脉宽调制(SPWM)技术和空间电压矢量脉宽调制(SVPWM)技术。在Matlab/Simulink环境下,分别建立SPWM和SVPWM电压源型逆变器供电的三相异步电动机的动态仿真模型,比较分析了在这两种控制方式下的仿真结果。结果表明,较之SPWM控制方式,SVPWM的异步电动机变频调速系统启动快,转矩脉动小,定子电流谐波小,具有较好的动态性能和稳态性能。

  17. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  18. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  19. Simulations

    CERN Document Server

    Ngada, N M

    2015-01-01

    The complexity and cost of building and running high-power electrical systems make the use of simulations unavoidable. The simulations available today provide great understanding about how systems really operate. This paper helps the reader to gain an insight into simulation in the field of power converters for particle accelerators. Starting with the definition and basic principles of simulation, two simulation types, as well as their leading tools, are presented: analog and numerical simulations. Some practical applications of each simulation type are also considered. The final conclusion then summarizes the main important items to keep in mind before opting for a simulation tool or before performing a simulation.

  20. Voltage Stability Evaluation Incorporating Wind Power Intermittency

    Institute of Scientific and Technical Information of China (English)

    Libao SHI; Yang ZHAO; Yixin NI; Liangzhong YAO; Masoud BAZARGAN

    2013-01-01

    A simulation framework is proposed to evaluate the voltage stability of power systems incorporating wind power intermittency.Firstly,the power output modelings of three types of wind turbines are discussed.Secondly,the Jensen model is employed to simulate the wind farm with the wake effect.The Monte Carlo based technique is used to conduct the voltage stability evaluation incorporating the randomness of the wind speed based on the Weibull probability distribution.Thirdly,the relative sensitivity index (RSI) is calculated to identify weak buses during analysis.Finally,case studies with different simulation scenarios are carried out.Some statistical results involving weakness probability,expected value and variance of RSI as well as preliminary conclusions are drawn based on numerical simulation results.

  1. Collector Network Equivalent Method of Wind Farm for Low Voltage Ride Through Simulation%适用于低电压穿越仿真的风电场内集电线路等值方法

    Institute of Scientific and Technical Information of China (English)

    陈钊; 夏安俊; 汪宁渤; 乔颖; 马彦宏

    2016-01-01

    Based on the two-machine parallel model,a method of collector network equivalence for wind farm is presented, which is suitable for low voltage ride through(LVRT) simulation.The equivalence of line reactance is based on the principle that the output reactive power of wind farm at the point of common coupling(PCC)before and after the transformation should be consistent during the grid voltage dip,and the equivalence of line resistance is based on the principle that the active power losses of collector network should be equal.By the impedance transformation of collector network,the wind farm can be made equivalent to a single-machine model connected to the PCC through an equivalent impedance.The line impedance equivalent method proposed is applicable to the equivalence of collector networks with tree like,radial or hybrid topology,and the calculated parameters of line impedance are constant which is convenient for actual application.Simulation results show that the equivalent model has high precision during a power system fault.%以二机并联模型为基础,提出了一种适用于低电压穿越(LVRT)仿真的风电场内集电线路的等值方法。以电网电压跌落期间风电场并网点的无功输出量一致为原则对线路的电抗进行等效;以风电场内线路的有功损耗相等为原则对线路的电阻进行等效。经过集电线路阻抗变换后,风电场等效为一台经过一等值阻抗直接连接到公共连接点(PCC)的单机等值模型。该方法适用于干线式、放射式和混合式集电线路拓扑的等值,且计算所得线路阻抗参数恒定,便于实际应用。仿真结果表明,在电网故障期间,等值模型具有很高的精度。

  2. 基于MATLAB的高压厂用变压器空载合闸仿真%No-load Switching Simulation of High Voltage Auxiliary Transformer Based on MATLAB

    Institute of Scientific and Technical Information of China (English)

    王青亚; 陈灵峰

    2016-01-01

    二次谐波制动方式作为防止变压器差动保护误动的一种可靠方式。利用MATLAB软件的simulink对华东桐柏抽水蓄能电站高压厂用变压器建立仿真模型,对厂变空载合闸时的励磁涌流进行了仿真,并用powergui模块对空载合闸时不同合闸初相角下励磁涌流中的二次谐波含量进行分析,从而为变压器差动保护中的二次谐波制动定值的整定提供理论依据,避免了变压器空载合闸、外部短路故障切除电压突然恢复时或厂变有很大励磁涌流流过时差动保护的误动。%As a way to prevent the malfunction of transformer differential protection, the 2nd-harmonic braking method is of high reliability. In this paper, the characteristics of magnetizing inrush current is analyzed, and a simulation model of high voltage transformer in power plant is established based on SIMULINK of MATLAB software. The magnetizing inrush current of unit transformer in no-load closing is also simulated, and the second harmonic content of inrush current is ana-lyzed by using Powergui module of different closing phase angle in no-load closing, thus the theoretical basis for second har-monic brake of transformer differential protection fixed value setting is provided, therefore, to avoid the differential protec-tion malfunction in transformer no-load switching or transformer flowing through large magnetizing inrush current when volt-age suddenly recovers after cutting off external short circuit fault.

  3. Electromechanical Transient Modeling and Simulation for Voltage Source Converter Based HVDC Power Transmission%VSC-HVDC机电暂态仿真建模及仿真

    Institute of Scientific and Technical Information of China (English)

    刘昇; 徐政; 唐庚; 华文; 薛英林

    2013-01-01

    Based on the fundamental frequency mathematical model of VSC-HVDC power transmission in d-q rotating dq rotary coordinate system, the electromechanical transient mathematical equations of VSC-HVDC power transmission are summarized, afterwards a electromechanical transient model for VSC-HVDC power transmission is achieved based on user-defined function of PSS/E and the achieved model is compared with the precise electromagnetic transient model for VSC-HVDC power transmission in PSCAD, and simulation results show that the steady state power flows from the two models are very similar and their dynamic characteristics are highly consistent each other, thus the effectiveness and accuracy of the achieved electromechanical transient model for VSC-HVDC power transmission are verified. Finally, using the achieved model the application of VSC-HVDC power transmission in actual large-scale multi-infeed HVDC power transmission system is researched, and research results show that using VSC-HVDC power transmission technology the commutation failure occurred in traditional HVDC power transmission system can be radically resolved.%  以VSC-HVDC在dq旋转坐标系下的基频数学模型为基础,总结了 VSC-HVDC 的机电暂态数学方程。之后基于 PSS/E 自定义模型功能实现了 VSC-HVDC 机电暂态模型,并将该模型和PSCAD中VSC-HVDC电磁暂态精确模型进行了对比,仿真结果表明两者的稳态潮流十分接近,动态特性具有很好的一致性,从而验证了VSC-HVDC机电暂态模型的有效性和准确性。最后基于该模型对VSC-HVDC 在实际大规模多直流馈入系统中的应用进行了研究,结果表明 VSC-HVDC 从根本上解决了传统直流输电的换相失败问题。

  4. A new route to nanoscale tomographic chemical analysis: Focused ion beam-induced auger electron spectrosocpy

    Science.gov (United States)

    Parvaneh, Hamed

    technique both spatially (x-y) and in depth (z) were also evaluated. For spatial resolution mainly the Monte Carlo simulations were utilized to estimate the area from which the excited target atoms with inner shell vacancies originate. Attention was paid to the relationship between the Auger electron infor-mation depth and the depth-dependency of various energy-loss mechanisms for the incoming ions. In particular, an area from which target atoms with energies higher than a threshold energy sputter off the surface, was concluded to be an estimate for lateral spatial resolution. Finally the effects of hardware parameters, in particular the solid angle of the detector and the transmission of the electron energy analyzer, on the collected signal were characterized and used to put together an estimate for the edge length of an information cube representing the minimum amount of material that has to be removed before a meaningful signal can be collected.

  5. Superconductivity and metallic behavior in Pb{sub x}C{sub y}O{sub δ} structures prepared by focused electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Winhold, M., E-mail: winhold@Physik.uni-frankfurt.de; Weirich, P. M.; Schwalb, C. H.; Huth, M. [Physikalisches Institut, Goethe-University, 60438 Frankfurt am Main (Germany)

    2014-10-20

    Focused electron beam induced deposition as a direct-write approach possesses great potential to meet the demands for superconducting nanostructure fabrication especially regarding its 3D patterning capabilities combined with the high resolution in the nanometer regime. So far, however, it was not possible to fabricate superconducting structures with this technique. In this work, we present a lead-based superconductor prepared by focused electron beam induced deposition by dissociation of the precursor tetraethyllead. The as-grown structures exhibit metallic behavior and a minimum resistivity in the normal state of ρ = 16 μΩcm at T = 9 K followed by a superconducting transition at T{sub c} = 7.2 K.

  6. Single-walled carbon nanotubes and nanocrystalline graphene reduce beam-induced movements in high-resolution electron cryo-microscopy of ice-embedded biological samples

    CERN Document Server

    Rhinow, Daniel; Turchanin, Andrey; Gölzhäuser, Armin; Kühlbrandt, Werner; 10.1063/1.3645010

    2011-01-01

    For single particle electron cryo-microscopy (cryoEM), contrast loss due to beam-induced charging and specimen movement is a serious problem, as the thin films of vitreous ice spanning the holes of a holey carbon film are particularly susceptible to beam-induced movement. We demonstrate that the problem is at least partially solved by carbon nanotechnology. Doping ice-embedded samples with single-walled carbon nanotubes (SWNT) in aqueous suspension or adding nanocrystalline graphene supports, obtained by thermal conversion of cross-linked self-assembled biphenyl precursors, significantly reduces contrast loss in high-resolution cryoEM due to the excellent electrical and mechanical properties of SWNTs and graphene.

  7. Beam-induced and cosmic-ray backgrounds observed in the ATLAS detector during the LHC 2012 proton-proton running period

    OpenAIRE

    Onofre, A.; Castro, Nuno Filipe Silva Fernandes; ATLAS Collaboration

    2016-01-01

    This paper discusses various observations on beam-induced and cosmic-ray backgrounds in the ATLAS detector during the LHC 2012 proton-proton run. Building on published results based on 2011 data, the correlations between background and residual pressure of the beam vacuum are revisited. Ghost charge evolution over 2012 and its role for backgrounds are evaluated. New methods to monitor ghost charge with beam-gas rates are presented and observations of LHC abort gap population by ghost charge a...

  8. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  9. High Output Voltage Based Multiphase Step-Up DC-DC Converter Topology with Voltage Doubler Rectifiers

    Directory of Open Access Journals (Sweden)

    Liao Xiaozhong

    2013-02-01

    Full Text Available High Output Voltage Based Multiphase Step-Up DC-DC Converter topology with voltage doubler rectifiers is presented in this paper. High output voltage is obtained due to the series combination of voltage doubler rectifiers on the secondary side of high frequency transformers. This topology is useful in the application where the output voltage is greater than the input. The two loop control strategy has been developed in order to analyze the stable and effective working of the converter topology. Therefore the working mode analysis of the converter topology has been described in detail. The multiphase step-up DC-DC converter topology is first simulated on MATLAB and then a prototype has been designed in order to verify the simulation and experimental results. Finally the simulation and experimental results are found to be satisfactory.

  10. SIMULACIÓN DE MONTE CARLO APLICADA A LA ESTIMACIÓN DE DEPRESIONES RÁPIDAS DE LA TENSIÓN EN REDES ELÉCTRICAS MONTE CARLO SIMULATION APPLIED TO THE ESTIMATION OF VOLTAGE DIPS IN ELECTRIC NETWORKS

    Directory of Open Access Journals (Sweden)

    Miguel Arias Albornoz

    2008-09-01

    Full Text Available En este trabajo se aplica el método de simulación de Monte Carlo (MC para estimar el número de depresiones rápidas de tensión (dips esperados en barras de una red eléctrica. Las estimaciones obtenidas a través de MC se comparan con los resultados de otro método de cálculo conocido como Método de Posiciones de Falla (MPF. Entre los resultados se muestra tanto la convergencia del algoritmo MC a los valores de largo plazo del método MPF como la distribución completa de frecuencias para diferentes eventos, lo cual representa información valiosa para apoyar la toma de decisiones sobre el empleo de equipos sensibles a este tipo de perturbación.In this work, the Monte Carlo simulation method (MC is applied to estimate the number of expected voltage dips in the nodes of an electric network. The estimations obtained through MC are compared with the results of another method of calculation, known as Failure Position Method (MPF. In the results, both the convergence of the algorithm with the long-term values of the MPF method and the complete distribution of frequencies for different events are shown. This represents valuable information to support the decision-making process for equipment that is sensitive to this type of perturbation.

  11. Controlled fabrication of advanced functional structures on the nanoscale by means of electron beam-induced processing

    Science.gov (United States)

    Schmidt, Sebastian W.; Foucher, Johann; Penzkofer, Christian; Irmer, Bernd

    2013-05-01

    The controlled deposition of materials by means of electron beam induced processing (EBIP) is a well-established patterning method, which allows for the fabrication of nanostructures with high spatial resolution in a highly precise and flexible manner. Applications range from the production of ultrathin coatings and nanoscaled conductivity probes to super sharp atomic force microscopy (AFM) tips, to name but a few. The latter are typically deposited at the very end of silicon or silicon-nitride tips, which are fabricated with MEMS technologies. EBIP therefore provides the unique ability to converge MEMS to NEMS in a highly controllable way, and thus represents an encouraging opportunity to refine or even develop further MEMS-based features with advanced functionality and applicability. In this paper, we will present and discuss exemplary application solutions, where we successfully applied EBIP to overcome dimensional and/or functional limitations. We therefore show the fabrication stability and accuracy of "T-like-shaped" AFM tips made from high density, diamond-like carbon (HDC/DLC) for the investigation of undercut structures on the base of CDR30-EBD tips. Such aggressive CD-AFM tip dimensions are mandatory to fulfill ITRS requirements for the inspection of sub-28nm nodes, but are unattainable with state-of-art Si-based MEMS technologies today. In addition to that, we demonstrate the ability of EBIP to realize field enhancement in sensor applications and the fabrication of cold field emitters (CFE). For example: applying the EBIP approach allows for the production of CFEs, which are characterized by considerably enhanced imaging resolution compared to standard thermal field emitters and stable operation properties at room temperature without the need for periodic cathode flashing - unlike typical CFEs. Based on these examples, we outline the strong capabilities of the EBIP approach to further downscale functional structures in order to meet future demands in the

  12. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  13. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  14. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  15. Dynamic Performance of Grid Converters using Adaptive DC Voltage Control

    DEFF Research Database (Denmark)

    Trintis, Ionut; Sun, Bo; Guerrero, Josep M.;

    2014-01-01

    This paper investigates a controller that ensures minimum operating dc-link voltage of a back-to-back converter system. The dc-link voltage adapts its reference based on the system state, reference given by an outer loop to the dc-link voltage controller. The operating dc-link voltage should...... be kept as low as possible to increase the power conversion efficiency and increase the reliability of converters. The dynamic performance of the proposed controller is investigated by simulations and experiments....

  16. Breakdown voltage of metal-oxide resistors in liquid argon

    CERN Document Server

    Bagby, L F; James, C C; Jones, B J P; Jostlein, H; Lockwitz, S; Naples, D; Raaf, J L; Rameika, R; Schukraft, A; Strauss, T; Weber, M S; Wolbers, S A

    2014-01-01

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period to simulate the electric breakdown in a HV-divider chain. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131\\,kV pulses, the limit of the test setup.

  17. Design of New Single-phase Multilevel Voltage Source Inverter

    Directory of Open Access Journals (Sweden)

    Rasoul Shalchi Alishah

    2014-07-01

    Full Text Available Multilevel inverters with more number of levels can produce high quality voltage waveforms. In this paper, a new single-phase structure for multilevel voltage source inverter is proposed which can generate a large number of levels with reduced number of IGBTs, gate driver circuits and diodes. Three algorithms for determination of dc voltage sources’ magnitudes are presented which provide odd and even levels at the output voltage waveform. A comparison is presented between proposed multilevel inverter and conventional cascade topology. The proposed topology is analyzed by the experimental and simulation results.

  18. A control method for voltage balancing in modular multilevel converters

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2014-01-01

    The modular multilevel converter (MMC) is attractive for medium- or high-power applications because of the advantages of its high modularity, availability, and high power quality. The voltage balancing of the floating capacitors in the cascaded submodules of the MMC is a key issue. In this paper......, a voltage-balancing control method is proposed. This method uses the phase-shifted carrier-based pulsewidth modulation scheme to control high-frequency current components for capacitor voltage balancing in the MMC without measuring the arm currents. Simulations and experimental studies of the MMC were...... conducted, and the results confirm the effectiveness of the proposed capacitor voltage-balancing control method....

  19. Lightning-induced overvoltages in medium voltage distribution systems and customer experienced voltage spikes

    Energy Technology Data Exchange (ETDEWEB)

    Sabiha, N. A.

    2010-07-01

    In Finland, distribution transformers are frequently subjected to lightning strokes for which they are continuously protected by spark-gaps. So, the breakdown probability of medium voltage (MV) spark-gaps is modeled using the Gaussian distribution function under an impulse voltage test in accordance with the IEC 60060-1 standard. The model is presented in the form of the well-known Gaussian tail probability. Accordingly, a modified probabilistic model is proposed to study the effect of impulse voltage superimposed on the ac voltage on the breakdown probability of MV spark-gaps. The modified model is verified using experimental data, where the experimental setup is arranged to generate a range of impulse voltages superimposed on the ac voltages. The experimental verification shows evidence of the efficacy of the proposed probabilistic model. Furthermore, the proposed model is used to evaluate single-phase, two-phase and three-phase spark-gap breakdown probabilities in the case of lightning induced overvoltages. These breakdown probabilities are used along with the simplified Rusck expression to evaluate the performance of MV overhead lines above a perfectly conducting ground under lightning-induced overvoltages using a statistical approach. In order to study the overvoltages propagating through the transformer to its low voltage side, the high frequency model of the transformer is investigated. First, the investigation is carried out using model introduced by Piantini at no-load condition. This model is modified to take more than one resonance frequency into consideration. Therefore, the frequency response of the simulated transient voltage is improved. A verification of the modified model is carried out through the comparison between the experimental and simulation results, in which the time domain simulation is carried out using ATP/EMTP while MATLAB is used to identify the model parameters. As this model is found suitable only for unloaded transformer, an

  20. Analysis and Mathematical Model for Restitution of Voltage Using Dynamic Voltage Restorer

    Directory of Open Access Journals (Sweden)

    C. Gopinath

    2014-01-01

    Full Text Available Voltage sag and swell have a major concern in the distribution systems. In order to mitigate the voltage sag and swell, a custom power device called dynamic voltage restorer (DVR is used. The proposed system is a polymer electrolyte membrane (PEM fuel cell based DVR. The energy from the fuel cell is stored in the super capacitor to restitute the voltage. In this proposed DVR, Z-source inverter is used instead of traditional inverter because of buck-boost and shoot through capability. The simulation is performed using three controller topologies: PI controller, synchronous reference frame controller and fuzzy controller and the results are verified using Matlab-Simulink environment.

  1. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    Science.gov (United States)

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

  2. Four-Switch Three-Phase PMSM Converter with Output Voltage Balance and DC-Link Voltage Offset Suppression

    Directory of Open Access Journals (Sweden)

    Fadil Hicham

    2017-01-01

    Full Text Available High power quality, efficiency, complexity, size, cost effectiveness and switching losses of the direct current to alternating current (DC–AC conversion system are crucial aspects in industrial applications. Therefore, the four-switch three-phase inverter (4S3P has been proposed as an innovative inverter design. However, this topology has been known to have many performance limitations in the low-frequency region, because of the generation of an unbalanced voltage leading to an unbalanced current due to the fluctuation and offset of the centre tap voltage of the DC-link capacitors. Those drawbacks are investigated and solved in this paper in order to provide pure sinusoidal output voltages. The generated output voltages are controlled using proportional-integral (PI controllers to follow the desired voltages. Furthermore, the DC-link capacitor voltage offset is mitigated by subtracting the direct component from the control reference voltage using low pass filters, where this direct voltage component provides the direct current component which leads to DC-link capacitor voltage divergence. A simulation model and experimental setup are used to validate the proposed concept. Many simulation and experimental results are carried out to show the effectiveness of the proposed control scheme.

  3. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  4. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  5. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  6. Quantitative evaluation of difference in impact of grounding accident on zero-phase voltage and zero-phase current in 6kV distribution system. Results of EMTP simulation; 6kV haiden keito deno chiraku jiko yoso no reiso den`atsu, reiso denryuha eno eikyo ni kansuru teiryoteki hyoka. EMTP (Electro Magnetic Transients Program) simulation kekka

    Energy Technology Data Exchange (ETDEWEB)

    Nagai, K. [Kansai Electric Power Co. Inc., Osaka (Japan)

    1997-10-10

    EMTP (electromagnetic transients program) analysis using accident spot models is conducted to disclose the different effect exerted on the zero-phase voltage and zero-phase current by different grounding accidents. An accident spot producing a near-delta waveform is represented by an equivalent circuit model No. 1 in which a switch simulating a discharge gap and the accident spot resistance are connected in series. In the case of an accident presenting a near-needle waveform, since it is supposed that the discharge is caused to be intermittent because the gap discharge start voltage is high and the accident spot resistance is low, it is presented by an equivalent circuit similar in configuration to model No. 1 with the constants altered. A leak-suggesting waveform with a current flowing even in the neighborhood of the zero cross point is represented by model No. 1 with a leak resistor added in parallel thereto, which circuit is shown as model No. 2. In the accidents represented by model No. 1, zero-phase current waveforms are grouped into three types, and the relations between the switch on-off circuit/grounding resistance and waveform configuration are disclosed. As for the accidents represented by model No. 2, it is found that the leak resistance values fall somewhere in the 200-2000 ohm range. 2 refs., 6 figs., 2 tabs.

  7. 65NM sub-threshold 11T-SRAM for ultra low voltage applications

    DEFF Research Database (Denmark)

    Moradi, Farshad; Wisland, Dag T.; Aunet, Snorre;

    simulated results. The circuit was simulated for supply voltages from 0.2 V to 0.35 V verifying the robustness of the proposed circuit for different supply voltages. The simulations show a significant improvement in SNM and a 4X improvement in read speed still maintaining a satisfactory write noise margin...

  8. 65NM sub-threshold 11T-SRAM for ultra low voltage applications

    DEFF Research Database (Denmark)

    Moradi, Farshad; Wisland, Dag T.; Aunet, Snorre

    simulated results. The circuit was simulated for supply voltages from 0.2 V to 0.35 V verifying the robustness of the proposed circuit for different supply voltages. The simulations show a significant improvement in SNM and a 4X improvement in read speed still maintaining a satisfactory write noise margin...

  9. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    . An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  10. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  11. Synchronised Voltage Space Vector Modulation for Three-level Inverters with Common-mode Voltage Elimination

    DEFF Research Database (Denmark)

    Oleschuk, Valentin; Blaabjerg, Frede

    2002-01-01

    of the voltage waveforms during the whole control range including overmodulation. Continuous, discontinuous and "direct-direct" schemes of synchronous PWM with both algebraic and trigonometric control functions have been analysed and compared. Simulations give the behaviour of the proposed methods and show some...

  12. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  13. Simulation of grain growth in nanocrystalline nickel induced by ion irradiation

    CERN Document Server

    Voegeli, W; Hahn, H

    2003-01-01

    Molecular dynamics simulations of 5 keV cascades in nanocrystalline nickel with grain sizes of 5 and 10 nm are presented. If the spike volume is exceeding the grain size or overlapping the grain boundary (GB) area we observe ion-beam induced grain growth for both grain sizes. In contrast cascades located in the grain volume lead to the formation of vacancies and interstitials, where the latter are mostly accommodated by the GBs upon annealing. Finally, we show that ion-beam induced grain growth is a direct result of recrystallisation of the thermal spike and therefore inherently different to grain growth observed in long time thermal annealing simulations.

  14. Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2016-01-01

    Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

  15. Stroboscopic image capture: Reducing the dose per frame by a factor of 30 does not prevent beam-induced specimen movement in paraffin

    Energy Technology Data Exchange (ETDEWEB)

    Typke, Dieter [Life Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gilpin, Christopher J. [Department of Cell Biology, University of Texas Southwestern Medical Center, Dallas, TX 75390 (United States); Downing, Kenneth H. [Life Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Glaeser, Robert M. [Life Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States) and Department of Molecular and Cell Biology, University of California, Berkeley, CA 94720 (United States)]. E-mail: rmglaeser@lbl.gov

    2007-02-15

    Beam-induced specimen movement may be the major factor that limits the quality of high-resolution images of organic specimens. One of the possible measures to improve the situation that was proposed by Henderson and Glaeser [Ultramicroscopy 16 (1985) 139-150], which we refer to here as 'stroboscopic image capture', is to divide the normal exposure into many successive frames, thus reducing the amount of electron exposure-and possibly the amount of beam-induced movement-per frame. The frames would then be aligned and summed. We have performed preliminary experiments on stroboscopic imaging using a 200-kV electron microscope that was equipped with a high dynamic range Charge-coupled device (CCD) camera for image recording and a liquid N{sub 2}-cooled cryoholder. Single-layer paraffin crystals on carbon film were used as a test specimen. The ratio F(g)/F(0) of paraffin reflections, calculated from the images, serves as our criterion for the image quality. In the series that were evaluated, no significant improvement of the F {sub image}(g)/F {sub image}(0) ratio was found, even though the electron exposure per frame was reduced by a factor of 30. A frame-to-frame analysis of image distortions showed that considerable beam-induced movement had still occurred during each frame. In addition, the paraffin crystal lattice was observed to move relative to the supporting carbon film, a fact that cannot be explained as being an electron-optical effect caused by specimen charging. We conclude that a significant further reduction of the dose per frame (than was possible with this CCD detector) will be needed in order to test whether the frame-to-frame changes ultimately become small enough for stroboscopic image capture to show its potential.

  16. A Particle-in-Cell Simulation for the Traveling Wave Direct Energy Converter (TWDEC) for Fusion Propulsion

    Science.gov (United States)

    Chap, Andrew; Tarditi, Alfonso G.; Scott, John H.

    2013-01-01

    A Particle-in-cell simulation model has been developed to study the physics of the Traveling Wave Direct Energy Converter (TWDEC) applied to the conversion of charged fusion products into electricity. In this model the availability of a beam of collimated fusion products is assumed; the simulation is focused on the conversion of the beam kinetic energy into alternating current (AC) electric power. The model is electrostatic, as the electro-dynamics of the relatively slow ions can be treated in the quasistatic approximation. A two-dimensional, axisymmetric (radial-axial coordinates) geometry is considered. Ion beam particles are injected on one end and travel along the axis through ring-shaped electrodes with externally applied time-varying voltages, thus modulating the beam by forming a sinusoidal pattern in the beam density. Further downstream, the modulated beam passes through another set of ring electrodes, now electrically oating. The modulated beam induces a time alternating potential di erence between adjacent electrodes. Power can be drawn from the electrodes by connecting a resistive load. As energy is dissipated in the load, a corresponding drop in beam energy is measured. The simulation encapsulates the TWDEC process by reproducing the time-dependent transfer of energy and the particle deceleration due to the electric eld phase time variations.

  17. Towards the differentiation of non-treated and treated corundum minerals by ion-beam-induced luminescence and other complementary techniques.

    Science.gov (United States)

    Calvo del Castillo, H; Deprez, N; Dupuis, T; Mathis, F; Deneckere, A; Vandenabeele, P; Calderón, T; Strivay, D

    2009-06-01

    Differentiation of treated and non-treated gemstones is a chief concern for major jewellery import companies. Low-quality corundum specimens coming from Asia appear to be often treated with heat, BeO or flux in order to enhance their properties as precious minerals. A set of corundum samples, rubies and sapphires from different origins, both treated and non-treated has been analysed at the Centre Européen d'Archéométrie, with ion-beam-induced luminescence (IBIL) and other complementary techniques such as Raman, proton-induced X-ray emission (PIXE), and proton-induced gamma-ray emission (PIGE). IBIL, also known as ionoluminescence, has been used before to detect impurities or defects inside synthetic materials and natural minerals; its use for the discrimination of gemstone simulants or synthetic analogues has been elsewhere discussed (Cavenago-Bignami Moneta, Gemología, Tomo I Piedras preciosas, perlas, corales, marfil. Ediciones Omega, Barcelona, 1991). PIXE has been frequently applied in the archaeometric field for material characterisation and provenance studies of minerals (Hughes, Ruby & sapphire. RWH Publishing, Fallbrook, 1997; Calvo del Castillo et al., Anal Bioanal Chem 387:869-878, 2007; Calligaro et al., NIM-B 189:320-327, 2002) and PIGE complements the elemental analysis by detecting light elements in these materials such as-and lighter than-sodium that cannot be identified with the PIXE technique (Sanchez et al., NIM-B 130:682-686, 1997; Emmett et al., Gems Gemology 39:84-135, 2003). The micro-Raman technique has also been used complementarily to ion beam analysis techniques for mineral characterisation (Novak et al., Appl Surf Sci 231-232:917-920, 2004). The aim of this study is to provide new means for systematic analysis of corundum gemstone-quality mineral, alternative to the traditional gemmologic methods; for this purpose, a Spanish jewellery import company supplied us with a number of natural corundum samples coming from different places

  18. No-Voltage Meter

    Science.gov (United States)

    1976-02-01

    VW- IKft, 1/4 H4 -Wv- IK!1, I/4W INTERNAL VOLTAGE NOTE ALL TRANSISTORS ARE 2N43A OR EQUIVALENT GERMANIUM ALLOY PNP AA ALKALINE BATTERY...D-,, regardless of polarity. This signal is then full-wave rectified by the diode-connected Germanium transistor bridge, T,, T-,, T3, and T4... Transistor T5 acts as a second current limiter. Resistor R2 was selected to give 90 f# of full-scale meter deflection with an input signal of 115 volts

  19. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  20. Toward the Optimal Configuration of Dynamic Voltage Scaling Points in Real-Time Applications

    Institute of Scientific and Technical Information of China (English)

    Hui-Zhan Yi; Xue-Jun Yang

    2006-01-01

    In real-time applications, compiler-directed dynamic voltage scaling (DVS) could reduce energy consumption efficiently, where compiler put voltage scaling points in the proper places, and the supply voltage and clock frequency were adjusted to the relationship between the reduced time and the reduced workload. This paper presents the optimal configuration of dynamic voltage scaling points without voltage scaling overhead, which minimizes energy consumption. The conclusion is proved theoretically. Finally, it is confirmed by simulations with equally-spaced voltage scaling configuration.

  1. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  2. Voltage Unbalance and Harmonic Compensation in Microgrids by Cooperation of Distributed Generators and Active Power Filters

    DEFF Research Database (Denmark)

    Hashempour, Mohammad M.; Savaghebi, Mehdi; Quintero, Juan Carlos Vasquez

    2016-01-01

    , selective virtual impedance and voltage/current regulators. Based on the secondary control, at first voltage harmonic compensation and voltage unbalance compensation of point of common coupling (PCC), that might includes sensitive loads, is carried out by DGs. Voltage compensation of PCC by DGs may cause...... severe voltage distortion at DGs terminals. Thus, the coordinated control is used to mitigate the voltage distortion to the defined maximum allowable value at DGs terminals. Evaluation of the proposed hierarchical control is carried out by a simulation study....

  3. Modelling of Chirality-Dependent Current-Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

    Institute of Scientific and Technical Information of China (English)

    ZHAO Xu; WANG Yan; YU Zhi-Ping

    2006-01-01

    @@ Current-voltage characteristics of ballistic carbon-nanotube field-effect transistors are characterized with an it-erative simulation program. The influence of carbon-nanotube chirality and diameter on the output current is considered. An analytical current-voltage expression under the quantum capacitance limit and low-voltage application is derived. Our simulation results are compared with actual measurement data.

  4. A New Secondary Control Approach for Voltage Regulation in DC Microgrids

    DEFF Research Database (Denmark)

    Peyghami Akhuleh, Saeed; Mokhtari, Hossein; Davari, Pooya

    2016-01-01

    In this paper the effect of secondary controller on voltage regulation in dc Micro-Grids (MGs) is studied. Basically, centralized or decentralized secondary controller has been employed to regulate the voltage drop raised by the primary controller. However, in the case of high capacity MGs and long...... feeders with much voltage drop on the line resistances, the conventional methods may not guarantee the voltage regulation on the load busses. Therefore, in addition to compensate the voltage drop of the primary controller, it is necessary to regulate the voltage of critical loads. In this paper, a new...... voltage regulation strategy is proposed to regulate the voltage of MG by employing the average voltage of identified busses, which are determined by the proposed modal analysis. Numerical steady state analysis and preliminary simulation results validate effectiveness of the proposed scheme. Furthermore...

  5. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... analysis, which is simple for computation and requires moderate automation and communication infrastructure. The proposed method is suitable for a hierarchical control structure where a supervisory controller has the provision to adapt the settings of local PV inverter controllers for overall system...

  6. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  7. More stability and robustness with the multi-loop control solution for dynamic voltage restorer (DVR)

    OpenAIRE

    2009-01-01

    This paper presents the application of dynamic voltage restorers (DVR) on power distribution systems for mitigation of voltage sags/swells at critical loads. DVR is one of the compensating types of custom power devices. An adequate modeling and simulation of DVR, including controls in MATLAB, based on forced-commutated voltage source converter (VSC), has been proved suitable for compensating the voltage sags/swells. In this paper, a double loop control method is proposed for the improvement o...

  8. Local Dynamic Reactive Power for Correction of System Voltage Problems

    Energy Technology Data Exchange (ETDEWEB)

    Kueck, John D [ORNL; Rizy, D Tom [ORNL; Li, Fangxing [ORNL; Xu, Yan [ORNL; Li, Huijuan [University of Tennessee, Knoxville (UTK); Adhikari, Sarina [ORNL; Irminger, Philip [ORNL

    2008-12-01

    Distribution systems are experiencing outages due to a phenomenon known as local voltage collapse. Local voltage collapse is occurring in part because modern air conditioner compressor motors are much more susceptible to stalling during a voltage dip than older motors. These motors can stall in less than 3 cycles (.05s) when a fault, such as on the sub-transmission system, causes voltage to sag to 70 to 60%. The reasons for this susceptibility are discussed in the report. During the local voltage collapse, voltages are depressed for a period of perhaps one or two minutes. There is a concern that these local events are interacting together over larger areas and may present a challenge to system reliability. An effective method of preventing local voltage collapse is the use of voltage regulation from Distributed Energy Resources (DER) that can supply or absorb reactive power. DER, when properly controlled, can provide a rapid correction to voltage dips and prevent motor stall. This report discusses the phenomenon and causes of local voltage collapse as well as the control methodology we have developed to counter voltage sag. The problem is growing because of the use of low inertia, high efficiency air conditioner (A/C) compressor motors and because the use of electric A/C is growing in use and becoming a larger percentage of system load. A method for local dynamic voltage regulation is discussed which uses reactive power injection or absorption from local DER. This method is independent, rapid, and will not interfere with conventional utility system voltage control. The results of simulations of this method are provided. The method has also been tested at the ORNL s Distributed Energy Communications and Control (DECC) Laboratory using our research inverter and synchronous condenser. These systems at the DECC Lab are interconnected to an actual distribution system, the ORNL distribution system, which is fed from TVA s 161kV sub-transmission backbone. The test results

  9. Isomerically Pure Tetramethylrhodamine Voltage Reporters.

    Science.gov (United States)

    Deal, Parker E; Kulkarni, Rishikesh U; Al-Abdullatif, Sarah H; Miller, Evan W

    2016-07-27

    We present the design, synthesis, and application of a new family of fluorescent voltage indicators based on isomerically pure tetramethylrhodamines. These new Rhodamine Voltage Reporters, or RhoVRs, use photoinduced electron transfer (PeT) as a trigger for voltage sensing, display excitation and emission profiles in the green to orange region of the visible spectrum, demonstrate high sensitivity to membrane potential changes (up to 47% ΔF/F per 100 mV), and employ a tertiary amide derived from sarcosine, which aids in membrane localization and simultaneously simplifies the synthetic route to the voltage sensors. The most sensitive of the RhoVR dyes, RhoVR 1, features a methoxy-substituted diethylaniline donor and phenylenevinylene molecular wire at the 5'-position of the rhodamine aryl ring, exhibits the highest voltage sensitivity to date for red-shifted PeT-based voltage sensors, and is compatible with simultaneous imaging alongside green fluorescent protein-based indicators. The discoveries that sarcosine-based tertiary amides in the context of molecular-wire voltage indicators prevent dye internalization and 5'-substituted voltage indicators exhibit improved voltage sensitivity should be broadly applicable to other types of PeT-based voltage-sensitive fluorophores.

  10. Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM fabricated by electron-beam-induced deposition of platinum

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Jason, E-mail: jason.brown@physics.ox.ac.uk [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Paul; Ramanujan, Chandra S; Sharp, David N [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Torimitsu, Keiichi [NTT Basic Research Laboratories, NTT Corporation, Atsugi, 243-0198 (Japan); Ryan, John F [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)

    2013-10-15

    We report on the fabrication of electrically conducting, ultra-sharp, high-aspect ratio probes for atomic force microscopy by electron-beam-induced deposition of platinum. Probes of 4.0 ±1.0 nm radius-of-curvature are routinely produced with high repeatability and near-100% yield. Contact-mode topographical imaging of the granular nature of a sputtered gold surface is used to assess the imaging performance of the probes, and the derived power spectral density plots are used to quantify the enhanced sensitivity as a function of spatial frequency. The ability of the probes to reproduce high aspect-ratio features is illustrated by imaging a close-packed array of nanospheres. The electrical resistance of the probes is measured to be of order 100 kΩ. - Highlights: • Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM with radius-of-curvature 4.0±±1.0 nm. • AFM probe fabrication by electron-beam-induced deposition of platinum. • Enhanced spatial resolution demonstrated through AFM of sputtered gold grains. • AFM imaging of deep clefts and recesses on a close-packed array of nanospheres.

  11. WAVELET BASED CLASSIFICATION OF VOLTAGE SAG, SWELL & TRANSIENTS

    Directory of Open Access Journals (Sweden)

    Vijay Gajanan Neve

    2013-05-01

    Full Text Available When the time localization of the spectral components is needed, the WAVELE TRANSFORM (WT can be used to obtain the optimal time frequency representation of the signal. This paper deals with the use of a wavelet transform to detect and analyze voltage sags, voltage swell and transients. It introduces voltage disturbance detection approach based on wavelet transform, identifies voltage disturbances, and discriminates the type of event which has resulted in the voltage disturbance, e.g. either a fault or a capacitor-switching incident.Feasibility of the proposed disturbance detection approach is demonstrated based on digital time-domain simulation of a distribution power system using the PSCAD software package, and is implemented using MATLAB. The developed algorithm has been applied to the 14-buses IEEE system to illustrate its application. Results are analyzed.

  12. Excitation of voltage oscillations in an induction voltage adder

    Directory of Open Access Journals (Sweden)

    Nichelle Bruner

    2009-07-01

    Full Text Available The induction voltage adder is an accelerator architecture used in recent designs of pulsed-power driven x-ray radiographic systems such as Sandia National Laboratories’ Radiographic Integrated Test Stand (RITS, the Atomic Weapons Establishment’s planned Hydrus Facility, and the Naval Research Laboratory’s Mercury. Each of these designs relies on magnetic insulation to prevent electron loss across the anode-cathode gap in the vicinity of the adder as well as in the coaxial transmission line. Particle-in-cell simulations of the RITS adder and transmission line show that, as magnetic insulation is being established during a pulse, some electron loss occurs across the gap. Sufficient delay in the cavity pulse timings provides an opportunity for high-momentum electrons to deeply penetrate the cavities of the adder cells where they can excite radio-frequency resonances. These oscillations may be amplified in subsequent gaps, resulting in oscillations in the output power. The specific modes supported by the RITS-6 accelerator and details of the mechanism by which they are excited are presented in this paper.

  13. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    Energy Technology Data Exchange (ETDEWEB)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  14. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  15. Inductor Compensation in Three Phase PFC Control with Decoupling the Input Voltage and Bus Voltage

    Directory of Open Access Journals (Sweden)

    Luo Guang

    2016-01-01

    Full Text Available As the nonlinear structure of the boost ac/dc topology, the PFC is difficult to be controlled. The average state space theory has revealed that the choke current is determined by duty-ratio coupled with input voltage and bus voltage, which makes the high-performance sine-wave current track control more challenging. To remove disturbing variables and reduce the zero-crossing distortion, the decoupling control strategy is presented. Also, it is shown in this paper that the variable inductance has a great influence on PFC and THDI. As the inductor in boost converter varies with the current, a compensating coefficient of current is also proposed. The decoupling strategy and the inductor compensation strategy are implemented on a UPS with three phase input voltage. Numerical simulation and experimental results has indicated the high-performance of these control strategy.

  16. Voltage margin control for offshore multi-use platform integration

    DEFF Research Database (Denmark)

    Mier, V.; Casielles, P.G.; Koto, J.

    terminal VSC-MTDC which includes offshore generation, storage, loads and ac connection, was modeled and simulated in DigSILENT Power Factory software. Voltage margin method has been used for reliable operation of the MTDC system without the need of fast communication. Simulation results show...

  17. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  18. Mechanism of electromechanical coupling in voltage-gated potassium channels

    Directory of Open Access Journals (Sweden)

    Rikard eBlunck

    2012-09-01

    Full Text Available Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt and vertical displacement in order to bring 3-4 e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy and molecular dynamics simulations. Evidently, the S4-S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii insight as to how the voltage sensor and pore domain influence one another; and (iii theoretical predictions on the movement of the cytosolic face of the KV channels

  19. Simulation

    DEFF Research Database (Denmark)

    Gould, Derek A; Chalmers, Nicholas; Johnson, Sheena J

    2012-01-01

    Recognition of the many limitations of traditional apprenticeship training is driving new approaches to learning medical procedural skills. Among simulation technologies and methods available today, computer-based systems are topical and bring the benefits of automated, repeatable, and reliable p...... performance assessments. Human factors research is central to simulator model development that is relevant to real-world imaging-guided interventional tasks and to the credentialing programs in which it would be used.......Recognition of the many limitations of traditional apprenticeship training is driving new approaches to learning medical procedural skills. Among simulation technologies and methods available today, computer-based systems are topical and bring the benefits of automated, repeatable, and reliable...

  20. Enhanced Model of Nonlinear Spiral High Voltage Divider

    Directory of Open Access Journals (Sweden)

    V. Panko

    2015-04-01

    Full Text Available This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage start-up MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

  1. Design of a Novel Current Balanced Voltage Controlled Delay Element

    Directory of Open Access Journals (Sweden)

    Pooja Saxena

    2014-04-01

    Full Text Available This paper presents a design of fast voltage controlled delay element based on modified version of low noise Current Balanced Logic (CBL. This delay element provides identical rising and falling edge delays controlled by the single control voltage. The post layout tunable delay range is from 140 ps to 800 ps over control voltage range of 0 to 2.1 V. An analysis for the delay element is also presented, which is in agreement with the simulated delays. A Delay Lock Loop (DLL is designed using this delay element to verify its performance.

  2. Adaptive coordinated control of engine speed and battery charging voltage

    Institute of Scientific and Technical Information of China (English)

    Jiangyan ZHANG; Xiaohong JIAO

    2008-01-01

    In this paper, the control problem of auxiliary power unit (APU) for hybrid electric vehicles is investigated. An adaptive controller is provided to achieve the coordinated control between the engine speed and the battery charging voltage. The proposed adaptive coordinated control laws for the throttle angle of the engine and the voltage of the power-converter can guarantee not only the asymptotic tracking performance of the engine speed and the regulation of the battery charging voltage, but also the robust stability of the closed loop system under external load changes. Simulation results are given to verify the performance of the proposed adaptive controller.

  3. Prediction of Pollution Flashover Voltage Based on Leakage Current Under AC Operating Voltage

    Institute of Scientific and Technical Information of China (English)

    MEI Hongwei; WANG Liming; GUAN Zhicheng; MAO Yingke

    2012-01-01

    This paper presented a model to predict the AC flashover voltage of contaminated suspension insulators.The prediction method is based on the maximum leakage current under AC operating voltage.Three kinds of widely used suspension insulators were tested in various contamination states such as pollution layers with different equivalent salt deposit density(ESDD),different composition of the conductive components,different non-soluble deposit density(NSDD) and different pollution distribution states to simulate the contamination states in nature.The effective ESDD was proposed and calculated.Influences of contamination states to maximum leakage current and flashover voltage were studied.Then,the relationships between flashover voltage and leakage current in these states were presented.Finally,considering the difference of insulator profiles,a new parameter is defined and a model to estimate the flashover voltage based on this parameter is developed.The model could be used in all kinds of suspension insulators in different contamination states and was validated by the test results.

  4. Simulation

    CERN Document Server

    Ross, Sheldon

    2006-01-01

    Ross's Simulation, Fourth Edition introduces aspiring and practicing actuaries, engineers, computer scientists and others to the practical aspects of constructing computerized simulation studies to analyze and interpret real phenomena. Readers learn to apply results of these analyses to problems in a wide variety of fields to obtain effective, accurate solutions and make predictions about future outcomes. This text explains how a computer can be used to generate random numbers, and how to use these random numbers to generate the behavior of a stochastic model over time. It presents the statist

  5. A cascaded three-phase symmetrical multistage voltage multiplier

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Shahid [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia); Singh, G K [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia); Besar, R [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia); Muhammad, G [Faculty of Information Science and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

    2006-10-15

    A cascaded three-phase symmetrical multistage Cockcroft-Walton voltage multiplier (CW-VM) is proposed in this report. It consists of three single-phase symmetrical voltage multipliers, which are connected in series at their smoothing columns like string of batteries and are driven by three-phase ac power source. The smoothing column of each voltage multiplier is charged twice every cycle independently by respective oscillating columns and discharged in series through load. The charging discharging process completes six times a cycle and therefore the output voltage ripple's frequency is of sixth order of the drive signal frequency. Thus the proposed approach eliminates the first five harmonic components of load generated voltage ripples and sixth harmonic is the major ripple component. The proposed cascaded three-phase symmetrical voltage multiplier has less than half the voltage ripple, and three times larger output voltage and output power than the conventional single-phase symmetrical CW-VM. Experimental and simulation results of the laboratory prototype are given to show the feasibility of proposed cascaded three-phase symmetrical CW-VM.

  6. Load distribution model and voltage static profile of Smart Grid

    Institute of Scientific and Technical Information of China (English)

    SUN Qiu-ye; LI Zhong-xu; YANG Jun; LUO Yan-hong

    2010-01-01

    Voltage profiles of feeders with the connection of distributed generations(DGs)were investigated.A unified typical load distribution model was established.Based on this model,exact expressions of feeder voltage profile with single and double DGs were derived and used to analyze the impact of DG's location and capacity on the voltage profile quantitatively.Then,a general formula of the voltage profile was derived.The limitation of single DG and necessity of multiple DGs for voltage regulation were also discussed.Through the simulation,voltage profiles of feeders with single and double DGs were compared.The voltage excursion rate is 7.40% for only one DG,while 2.48% and 2.36% for double DGs.It is shown that the feeder voltage can be retained in a more appropriate range with multiple DGs than with only one DG.Distributing the total capacity of DGs is better than concentrating it at one point.

  7. Simulation and Study on Zero Voltage Vector in Permanent Magnet Synchronous Motor Based on Direct Torque Control%零矢量在永磁同步电机直接转矩 控制中的作用及其仿真研究

    Institute of Scientific and Technical Information of China (English)

    王莹; 胡育文; 杨建飞

    2011-01-01

    在以往的永磁同步电机直接转矩控制研究中,将零电压矢量引入到转矩调节器中,认为其起到保持当前转矩的作用.该文对永磁同步电机中零电压矢量对转矩脉动和磁链脉动的影响进行了详细的理论分析,指出在电机高速运行的情况下,零矢量实际是起到减小转矩的作用.转速越高,零矢量减小转矩的效果越明显.仿真结果证明了理论分析的正确性,这为正确理解零矢量在永磁同步电机直接转矩控制的作用以及今后对零矢量作用的范围进行优化设计具有指导意义.%In previous study of permanent magnet synchronous motor direct torque control ( PMSM DTC ) , considered to keep the torque stable, zero voltage vector was introduced into the torque controller. The influence of zero voltage vector on flux and torque ripple in PMSM DTC. Was analyzed detailedly in this paper. And it pointed out that, when the motor run with a high speed, zero voltage vector actually reduced the torque. The higher the rotor speed was, the more obvious the effect of reducing the torque was. The simulation result verified the validity of the theory analysis. It is a significant guide for understanding correctly the function of zero voltage vector in PMSM DTC and optimizing the design of zero voltage vector working zone in the future.

  8. Design and Control of a Dynamic Voltage Restorer

    DEFF Research Database (Denmark)

    Nielsen, John Godsk

    . The advantages and disadvantages are treated by inserting the DVR in either the medium voltage distribution system or in the low voltage distribution system. Different topologies for a DVR are investigated on a converter and system level and the protection issues are treated. The design of a DVR is treated...... and two prototype DVRs are designed and specified. The first DVR is a low voltage DVR (LV-DVR) rated for 10 kVA for insertion in a 400 V low voltage grid and the second DVR is a high voltage DVR (HV-DVR) rated for 200 kVA for insertion in a 10 kV medium voltage distribution system. The control issues...... in order to aid the design process and perform simulations on a DVR. The simulations have been compared with measurements in order to be able to test the validity of the models. A good agreement have been found between simulations and measurements, which indicates that the system is sufficiently modelled...

  9. A Low-Voltage CMOS Buffer for RF Applications Based on a Fully-Differential Voltage-Combiner

    OpenAIRE

    Abdollahvand, S.; Santos-Tavares, R.; Goes, João

    2013-01-01

    Part 20: Electronics: RF Applications; International audience; This paper presents a new CMOS buffer circuit topology for radio-frequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source degeneration technique is used. The...

  10. More stability and robustness with the multi-loop control solution for dynamic voltage restorer (DVR

    Directory of Open Access Journals (Sweden)

    Abdelkhalek Othmane

    2009-01-01

    Full Text Available This paper presents the application of dynamic voltage restorers (DVR on power distribution systems for mitigation of voltage sags/swells at critical loads. DVR is one of the compensating types of custom power devices. An adequate modeling and simulation of DVR, including controls in MATLAB, based on forced-commutated voltage source converter (VSC, has been proved suitable for compensating the voltage sags/swells. In this paper, a double loop control method is proposed for the improvement of the stability of DVR during the load current variation. For the main loop (Outer Voltage Loop, we use a PI controller for the regulation of the filter condenser voltage. The second loop (Inner Current Loop also uses a PI controller to control the disturbances current during load variation. Simulation results are presented to illustrate and understand the performances of DVR in the compensation of voltage sags/swell even with variation load condition.

  11. Transient Voltage Stability Analysis and Improvement of A Network with different HVDC Systems

    DEFF Research Database (Denmark)

    Liu, Yan; Chen, Zhe

    2011-01-01

    the theoretical analysis and the improved control method, real time simulation model of a hybrid multi-infeed HVDC system based on western Danish power system is established in RTDS™. Simulation results show that the enhanced transient voltage stability can be achieved.......This paper presents transient voltage stability analysis of an AC system with multi-infeed HVDC links including a traditional LCC HVDC link and a VSC HVDC link. It is found that the voltage supporting capability of the VSC-HVDC link is significantly influenced by the tie-line distance between...... the two links and the size of loads. In order to improve the transient voltage stability, a voltage adjusting method is proposed in this paper. A voltage increment component has been introduced into the outer voltage control loop under emergency situation caused by severe grid faults. In order to verify...

  12. Voltage Quality Enhancement and Fault Current Limiting with Z-Source based Series Active Filter

    Directory of Open Access Journals (Sweden)

    F. Gharedaghi

    2011-11-01

    Full Text Available In this study, series active filter or dynamic voltage restorer application is proposed for reduction of downstream fault current in addition to voltage quality enhancement. Recently, the application of Z-source inverter is proposed in order to optimize DVR operation. This inverter makes DVR to operate appropriately when the energy storage device’s voltage level severely falls. Here, the Z-source inverter based DVR is proposed to compensate voltage disturbance at the PCC and to reduce the fault current in downstream of DVR. By calculating instantaneous current magnitude in synchronous frame, control system recognizes if the fault exists or not, and determines whether DVR should compensate voltage disturbance or try to reduce the fault current. The proposed system is simulated under voltage sag and swell and short circuit conditions. The simulation results show that the system operates correctly under voltage sag and short circuit conditions.

  13. A Half-Bridge Voltage Balancer with New Controller for Bipolar DC Distribution Systems

    Directory of Open Access Journals (Sweden)

    Byung-Moon Han

    2016-03-01

    Full Text Available This paper proposes a half-bridge voltage balancer with a new controller for bipolar DC distribution systems. The proposed control scheme consists of two cascaded Proportional Integral (PI controls rather than one PI control for balancing the pole voltage. In order to confirm the excellence of voltage balancing performance, a typical bipolar DC distribution system including a half-bridge voltage balancer with proposed controller was analyzed by computer simulations. Experiments with a scaled prototype were also carried out to confirm the simulation results. The half-bridge voltage balancer with proposed controller shows better performance than the half-bridge voltage balancer with one PI control for balancing the pole voltage.

  14. Dynamic voltage regulation and power export in a distribution system using distributed generation

    Institute of Scientific and Technical Information of China (English)

    Aamir HANIF; Muhammad Ahmed CHOUDHRY

    2009-01-01

    The major aim of power quality (PQ) enhancing techniques is to maintain a specified voltage magnitude at a desired frequency for sensitive loads irrespective of faults on the power distribution network. The dynamic voltage restorer (DVR) is a device used to mitigate voltage sags to regulate load voltage. This paper presents a mathematical model for leading series voltage injection to mitigate sags thereby achieving the improvement of the utility power factor as well as power sharing between the DVR and utility. The power sharing will be as per requirement to compensate the sags considering the available distributed generation (DG). The approach of mitigating voltage sags using the concept of leading series voltage injection is suitable for those locations where phase shift in the voltage will not cause any problem. The MATLAB/SIMULINK SimPowerSystem toolbox has been used to obtain simulation results to verify the proposed mathematical model.

  15. Voltage stability analysis in the new deregulated environment

    Science.gov (United States)

    Zhu, Tong

    Nowadays, a significant portion of the power industry is under deregulation. Under this new circumstance, network security analysis is more critical and more difficult. One of the most important issues in network security analysis is voltage stability analysis. Due to the expected higher utilization of equipment induced by competition in a power market that covers bigger power systems, this issue is increasingly acute after deregulation. In this dissertation, some selected topics of voltage stability analysis are covered. In the first part, after a brief review of general concepts of continuation power flow (CPF), investigations on various matrix analysis techniques to improve the speed of CPF calculation for large systems are reported. Based on these improvements, a new CPF algorithm is proposed. This new method is then tested by an inter-area transaction in a large inter-connected power system. In the second part, the Arnoldi algorithm, the best method to find a few minimum singular values for a large sparse matrix, is introduced into the modal analysis for the first time. This new modal analysis is applied to the estimation of the point of voltage collapse and contingency evaluation in voltage security assessment. Simulations show that the new method is very efficient. In the third part, after transient voltage stability component models are investigated systematically, a novel system model for transient voltage stability analysis, which is a logical-algebraic-differential-difference equation (LADDE), is offered. As an example, TCSC (Thyristor controlled series capacitors) is addressed as a transient voltage stabilizing controller. After a TCSC transient voltage stability model is outlined, a new TCSC controller is proposed to enhance both fault related and load increasing related transient voltage stability. Its ability is proven by the simulation.

  16. Dynamic Analysis of Power System Voltage Stability.

    Science.gov (United States)

    Gebreselassie, Assefa

    This thesis investigates the effects of loads and voltage regulators on the dynamic voltage stability of power systems. The analysis focuses on the interactions of machine flux dynamics with loads and voltage control devices. The results are based on eigenvalue analysis of the linearized models and time simulation of the nonlinear models, using models from the Power System Toolbox, a Matlab -based package for the simulation and small signal analysis of nonlinear power systems. The voltage stability analysis results are developed using a single machine single load system with typical machine and network parameters and the NPCC 10-machine system. Dynamic models for generators, exciters and loads are used. The generator is modeled with a pair of poles and one damper circuit in both the d-axis and the q-axis. Saturation effects are included in the model. The IEEE Type DC1 DC commutator exciter model is used for all the exciters. Five different types of loads: constant impedance, constant current, constant power, a first order induction motor model (slip model) and a third order induction motor model (slip-flux model) are considered. The modes of instability and the stability limits of the different representation of loads are examined for two different operating modes of the exciters. The first, when all the exciters are on automatic control and the second when some exciters are on manual control. Modal participation factors are used to determine the characteristics of the critical modes. The characteristics of the unstable modes are verified by performing time simulation of the nonlinear models. Oscillatory and non-oscillatory instabilities are experienced by load buses when all the exciters are on automatic control and some exciters are on manual control respectively, for loads which are predominantly constant power and induction motors. It is concluded that the mode of instability does not depend on the type of loads but on the operating condition of the exciters

  17. OFDM-based Low-voltage Powerline High Rate Communication

    Institute of Scientific and Technical Information of China (English)

    ZHANG You-bing(张有兵); CHENG Shi-jie(程时杰); Joseph Nguimbis; XIONG Lan(熊兰)

    2004-01-01

    Based on the experimental results, a simplified model for low-voltage powerline used as a high frequency communication channel is presented. With this model, the Orthogonal Frequency Division Multiplexing (OFDM) based high rate digital communication over low-voltage powerline is analyzed and simulated. The capability of thc signal transmission system in overcoming multi-path interference and selection of the system parameters are discussed. And time-domain simulation is carried out to investigate the transmission capability of the OFDM cammunication system for different mapping schemes and transmission power levels. Simulation results show that it is possible to realize high rate digital communication over iow-voltage powerliue using OFDM when the transmitted power is large enough.

  18. AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size

    Energy Technology Data Exchange (ETDEWEB)

    Fares, B. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France)]. E-mail: boubker.fares@insa-lyon.fr; Dubois, C. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France); Gautier, B. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France); Dupuy, J.C. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France); Cayrel, F. [Universite de Tours, Laboratoire de Micro-Electronique de Puissance, 16 Rue Pierre et Marie Curie, F-37071 Tours Cedex 2 (France); Gaudin, G. [Universite de Tours, Laboratoire de Micro-Electronique de Puissance, 16 Rue Pierre et Marie Curie, F-37071 Tours Cedex 2 (France)

    2006-07-30

    In this paper, the SIMS beam induced roughness (BIR) in monocrystalline Si in presence of initial surface or bulk defects of nanometric size is studied. We follow the development of the BIR by monitoring the increase of Si{sup 2+} and SiO{sub 2} {sup +} signals during SIMS sputtering. The topography of the crater bottoms is measured at different steps of the evolution of the roughness using an atomic force microscope (AFM). We show that in presence of nanometric sized defects on the surface or in the bulk, the BIR develops far more rapidly than usual. It appears as soon as the crater reaches the defects and, as reported on Si free from any treatment, the same morphology evidencing waves perpendicular to the sputtering beam develops rapidly. This study of the behaviour of the BIR in presence of voluntarily introduced defects allows us to better understand the basic physical phenomena involved in its apparition.

  19. Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

    Directory of Open Access Journals (Sweden)

    Ismael García Serrano

    2016-11-01

    Full Text Available We report efficient vortex pinning in thickness-modulated tungsten–carbon-based (W–C nanostructures grown by focused ion beam induced deposition (FIBID. By using FIBID, W–C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current.

  20. Electron-beam induced disorder effects in optimally doped Bi2Sr2CaCu2O8+x single crystal samples

    Science.gov (United States)

    Vobornik, I.; Berger, H.; Pavuna, D.; Margaritondo, G.; Forro, L.; Grioni, M.; Rullier-Albenque, F.; Onellion, M.; EPFL Collaboration; Laboratoire Des Solides Irradiés Collaboration

    2000-03-01

    We report on the effects of electron-beam induced disorder in optimally doped Bi2Sr2CaCu2O8+x single crystal samples, measured with angle-resolved photoemission. In the superconducting state, the disorder fills in the gap, without changing the binding energy or the width of the narrow coherent feature.[1] In the normal state, disorder leads to an anisotropic pseudogap in angle-resolved photoemission, with the largest pseudogap near the (0,p) point and no pseudogap in the direction.[2,3] We discuss implications of these data. 1. I. Vobornik et.al., Phys. Rev. Lett. 82 , 3128 (1999). 2. I. Vobornik, Ph.D. thesis, EPFL, Lausanne, Switzerland, October, 1999. 3. I. Vobornik et.al., unpublished.

  1. Model for Electron-Beam-Induced Current Analysis of mc-Si Addressing Defect Contrast Behavior in Heavily Contaminated PV Material: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, H.; Gorman, B.; Al-Jassim, M.

    2012-06-01

    Much work has been done to correlate electron-beam-induced current (EBIC) contrast behavior of extended defects with the character and degree of impurity decoration. However, existing models fail to account for recently observed contrast behavior of defects in heavily contaminated mc-Si PV cells. We have observed large increases in defect contrast with decreasing temperature for all electrically active defects, regardless of their initial contrast signatures at ambient temperature. This negates the usefulness of the existing models in identifying defect character and levels of impurity decoration based on the temperature dependence of the contrast behavior. By considering the interactions of transition metal impurities with the silicon lattice and extended defects, we attempt to provide an explanation for these observations. Our findings will enhance the ability of the PV community to understand and mitigate the effects of these types of defects as the adoption of increasingly lower purity feedstocks for mc-Si PV production continues.

  2. Watching adsorption and electron beam induced decomposition on the model system Mo(CO){sub 6}/Cu(1 1 1) by X-ray absorption and photoemission spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Paufert, Pierre, E-mail: pierre.paufert@u-bourgogne.fr [ICB, UMR 6303 CNRS-Université de Bourgogne, BP 47870, 21078 Dijon cedex (France); Fonda, Emiliano [Synchrotron SOLEIL, BP48, St Aubin, 91192 Gif sur Yvette cedex (France); Li, Zheshen [ISA, University of Aarhus, Ny Munkegade, DK-8000 Aarhus C (Denmark); Domenichini, Bruno, E-mail: bruno.domenichini@u-bourgogne.fr [ICB, UMR 6303 CNRS-Université de Bourgogne, BP 47870, 21078 Dijon cedex (France); Bourgeois, Sylvie [ICB, UMR 6303 CNRS-Université de Bourgogne, BP 47870, 21078 Dijon cedex (France)

    2013-11-01

    An in-depth study of the first steps of electron beam assisted growth of Mo from molybdenum hexacarbonyl on Cu(1 1 1) has been carried out exploiting the complementarity of X-ray photoemission and X-ray absorption spectroscopies. Frank van der Merwe (2D) growth mode has been observed for the completion of the two first monolayers of adsorbed molecules through a simple physisorption process. Irradiation of the Mo(CO){sub 6} deposit by 1 keV electron beam induces a modification of molybdenum coordination, the average number of C-neighbors decreasing from 6 to 3. Decomposed molecules remain on the surface after annealing at 520 K and organize themselves, the molybdenum atoms moving in Cu(1 1 1) surface fcc hollow sites. After annealing at 670 K, metallic molybdenum growth begins, if the total amount of adsorbed Mo atoms exceeds 1.2 monolayers.

  3. Watching adsorption and electron beam induced decomposition on the model system Mo(CO)6/Cu(1 1 1) by X-ray absorption and photoemission spectroscopies

    Science.gov (United States)

    Paufert, Pierre; Fonda, Emiliano; Li, Zheshen; Domenichini, Bruno; Bourgeois, Sylvie

    2013-11-01

    An in-depth study of the first steps of electron beam assisted growth of Mo from molybdenum hexacarbonyl on Cu(1 1 1) has been carried out exploiting the complementarity of X-ray photoemission and X-ray absorption spectroscopies. Frank van der Merwe (2D) growth mode has been observed for the completion of the two first monolayers of adsorbed molecules through a simple physisorption process. Irradiation of the Mo(CO)6 deposit by 1 keV electron beam induces a modification of molybdenum coordination, the average number of C-neighbors decreasing from 6 to 3. Decomposed molecules remain on the surface after annealing at 520 K and organize themselves, the molybdenum atoms moving in Cu(1 1 1) surface fcc hollow sites. After annealing at 670 K, metallic molybdenum growth begins, if the total amount of adsorbed Mo atoms exceeds 1.2 monolayers.

  4. Research and Experiments on a Unipolar Capacitive Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Qiang Zhou

    2015-08-01

    Full Text Available Voltage sensors are an important part of the electric system. In service, traditional voltage sensors need to directly contact a high-voltage charged body. Sensors involve a large volume, complex insulation structures, and high design costs. Typically an iron core structure is adopted. As a result, ferromagnetic resonance can occur easily during practical application. Moreover, owing to the multilevel capacitor divider, the sensor cannot reflect the changes of measured voltage in time. Based on the electric field coupling principle, this paper designs a new voltage sensor; the unipolar structure design solves many problems of traditional voltage sensors like the great insulation design difficulty and high costs caused by grounding electrodes. A differential signal input structure is adopted for the detection circuit, which effectively restrains the influence of the common-mode interference signal. Through sensor modeling, simulation and calculations, the structural design of the sensor electrode was optimized, miniaturization of the sensor was realized, the voltage division ratio of the sensor was enhanced, and the phase difference of sensor measurement was weakened. The voltage sensor is applied to a single-phase voltage class line of 10 kV for testing. According to the test results, the designed sensor is able to meet the requirements of accurate and real-time measurement for voltage of the charged conductor as well as to provide a new method for electricity larceny prevention and on-line monitoring of the power grid in an electric system. Therefore, it can satisfy the development demands of the smart power grid.

  5. Local Voltage Support from Distributed Energy Resources to Prevent Air Conditioner Motor Stalling

    Energy Technology Data Exchange (ETDEWEB)

    Baone, Chaitanya A [ORNL; Xu, Yan [ORNL; Kueck, John D [ORNL

    2010-01-01

    Microgrid voltage collapse often happens when there is a high percentage of low inertia air-conditioning (AC) motors in the power systems. The stalling of the AC motors results in Fault Induced Delayed Voltage Recovery (FIDVR). A hybrid load model including typical building loads, AC motor loads, and other induction motor loads is built to simulate the motoring stalling phenomena. Furthermore, distributed energy resources (DE) with local voltage support capability are utilized to boost the local bus voltage during a fault, and prevent the motor stalling. The simulation results are presented. The analysis of the simulation results show that local voltage support from multiple DEs can effectively and economically solve the microgrid voltage collapse problem.

  6. Voltage Collapse Risk Associated to Under-Voltage Capacitive Compensation in Electric Power System Operation

    Directory of Open Access Journals (Sweden)

    Heraldo S. Barbuy

    2009-01-01

    Full Text Available Problem statement: In the operation of an Electric Power System (EPS, it has been usual to provide reactive power injection to avoid an under-voltage bus condition. In some situations an adequate voltage profile will not be a guarantee against Voltage Collapses (VCs that may cause blackouts as seen in many occurrences around the world. The repeatedly injection of reactive power can turn a bus into a characteristic too much capacitive. Under this condition and in the presence of a considerable percentage of the constant power load type, there will be a high risk of a VC. Any of the indices proposed in the literature as VC Proximity Indicators (VCPIs may alert the operator about the risk. Approach: In order to elucidate the problem stated, simulations were performed using MatLab/SimPowerSystems. It was used a basic example system composed by an infinite-bus feeding, through a large impedance line, a bus load whose power could be increased in ramp manner. It is also included a shunt capacitive compensation at the load bus every time the voltage value reaches 0.9 pu. Therefore, the VC risk increase could be shown by means of graphic results and the indications of some VCPIs sensitivity indices (including the new proposed index. Results: The graphics obtained in this study is a contribution to illustrate the voltage collapse risk problem when dealing with adjustments of voltage profile to meet the system requirements. Also, a VCPI sensitivity indicator using apparent load power was tested. The results have shown that all VCPI responses are very similar for a given case and electric system. Conclusion/Recommendations: Any VCPI information can help in the decision stage between either more reactive power injection or load shedding. A routine can also be developed for a supervisory program in order to alert the operator about VC risks.

  7. Impacts on Power Factor of AC Voltage Controllers Under Non-Sinusoidal Conditions

    Directory of Open Access Journals (Sweden)

    Mukhtiar Ahmed Mahar

    2012-04-01

    Full Text Available AC-AC conversion is obtained with the help of Cyclo-converters, DC Link converters and AC Voltage Controllers. AC voltage controllers are also referred to as voltage regulators. Main issue concerned to these converters is that they generate harmonics due to periodic variable structure system. The generated harmonics create disturbances and degrade the performance of converter. The power factor of supply side is affected due to these harmonics. This paper focuses on source side power factor of ac voltage controllers under nonsinusoidal conditions. In order to observe the power factor, measurement tool of power factor and simulation model of ac voltage controller is also developed in MATLAB software.

  8. Stability Analysis and Controller Synthesis for Digital Single-Loop Voltage-Controlled Inverters

    DEFF Research Database (Denmark)

    Wang, Xiongfei; Loh, Poh Chiang; Blaabjerg, Frede

    2016-01-01

    This paper analyzes first the stability of single-loop digital voltage control scheme for the LC-filtered voltage source inverters. It turns out that the phase lag, caused by the time delay of digital control system and by the use of integral controller, can stabilize the voltage loop without...... damping of LC-filter resonance. The stability regions are then identified with alternative voltage controller synthesized. For further widening the stability region, an active damping approach is proposed and co-designed with the voltage controller in the discrete z-domain. Simulations and experimental...

  9. High-Voltage, Low-Power BNC Feedthrough Terminator

    Science.gov (United States)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  10. Voltage Mode Universal Biquad Using CCCII

    Directory of Open Access Journals (Sweden)

    Ashish Ranjan

    2011-01-01

    Full Text Available This paper proposes a multi-input single-output (MISO second-order active-C voltage mode (VM universal filter using two second-generation current-controlled current conveyors (CCCIIs and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (0 and quality factor (0 via bias current of CCCIIs. PSPICE simulation results confirm the theory.

  11. Complementary Skyrmion Racetrack Memory With Voltage Manipulation

    Science.gov (United States)

    Kang, Wang; Zheng, Chentian; Huang, Yangqi; Zhang, Xichao; Zhou, Yan; Lv, Weifeng; Zhao, Weisheng

    2016-07-01

    Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall (DW). However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation and synchronization etc. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.

  12. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  13. Voltage Sensors Monitor Harmful Static

    Science.gov (United States)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  14. Soft computing techniques in voltage security analysis

    CERN Document Server

    Chakraborty, Kabir

    2015-01-01

    This book focuses on soft computing techniques for enhancing voltage security in electrical power networks. Artificial neural networks (ANNs) have been chosen as a soft computing tool, since such networks are eminently suitable for the study of voltage security. The different architectures of the ANNs used in this book are selected on the basis of intelligent criteria rather than by a “brute force” method of trial and error. The fundamental aim of this book is to present a comprehensive treatise on power system security and the simulation of power system security. The core concepts are substantiated by suitable illustrations and computer methods. The book describes analytical aspects of operation and characteristics of power systems from the viewpoint of voltage security. The text is self-contained and thorough. It is intended for senior undergraduate students and postgraduate students in electrical engineering. Practicing engineers, Electrical Control Center (ECC) operators and researchers will also...

  15. Component-Minimized Buck-Boost Voltage Source Inverters

    DEFF Research Database (Denmark)

    Gao, F.; Loh, P.C.; Blaabjerg, Frede;

    2007-01-01

    the additional voltage relationship between dc input and ac output which is beyond the expectation when continuous inductor current is assumed. These theoretical findings, together with the inverter practicality, have been confirmed in Matlab/PLECS simulations and  experimentally using laboratory implemented......This paper presents the design of buck-boost B4 inverters that can be derived from either Ćuk- or SEPIC-derived buck-boost B6 inverters. Unlike traditional inverters, the integration of front-end voltage boost circuitry and inverter circuitry allows it to perform buck-boost voltage inversion....... In order to form a distinct neutral potential in the corresponding voltage boost circuitry for correct B4 inverter operation, necessary modifications are derived step by step. The resulted dc networks with symmetrical placement of passive components allow complete charging and equal energy distribution...

  16. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  17. A Quantities Method of Induction Motor Under Unbalanced Voltage Conditions

    Directory of Open Access Journals (Sweden)

    Ayong Hiendro

    2010-08-01

    Full Text Available The most complete definition for the voltage unbalance is using complex voltage unbalance factor (CVUF that consists of its magnitude and angle. Unfortunately, the definition did not distinguish between undervoltage and overvoltage unbalance conditions. In this paper, the analysis of the motor is performed using the method of symmetrical component and MATLAB software is used to investigate the performance of induction motor. The simulation results show that the International Electrotechnical Commission (IEC definition of the voltage unbalance can be applied to evaluate total copper losses precisely. However, the phase angle of unbalance factor must be included for accurate predicting of peak currents and peak copper losses of the phase windings of the motor.The unbalanced conditions which distinguish between under and over voltage unbalance must also be taken into consideration for assessing all the quantities.

  18. Survey of Induced Voltage and Current Phenomena in GIS Substation

    Directory of Open Access Journals (Sweden)

    Seyed Mohammad Hassan Hosseini

    2014-03-01

    Full Text Available Induced capacitive voltage and current in high voltage GIS substation is one of the most significant phenomena that may have made some problems in this substation operation. At this study the various equipment of 420 KV Karoon4 substations such as powerhouses, input and output lines, bus-bar and bus-duct have simulated by applying EMTP-RV software. Then with the different condition of single-phase and three-phase faults on the lines in critical conditions, capacitive induction voltage and current by parallel capacitor with circuit breaker is surveyed. The results show the value of this induced current and voltage and that this critical conditions the breakers and dis-connector switches must be able to interrupt this value of current.

  19. Global Transient Stability and Voltage Regulation for Multimachine Power Systems

    DEFF Research Database (Denmark)

    Gordon, Mark; Hill, David J.

    2008-01-01

    This paper addresses simultaneously the major fundamental and difficult issues of nonlinearity, uncertainty, dimensionality and globality to derive performance enhancing power system stability control. The main focus is on simultaneous enhancement of transient stability and voltage regulation...... law is implemented to coordinate transient stabilizer and voltage regulator for each machine. Digital simulation studies show that global control scheme achieves unified transient stability and voltage regulation in the presence of parametric uncertainties and significant sudden changes in the network...... of power systems. This problem arises from the practical concern that both frequency and voltage control are important indices of power system control and operation but they are ascribed to different stages of system operation, i.e. the transient and post transient period respectively. The Direct Feedback...

  20. Low Voltage Power Supply Incorporating Ceramic Transformer

    CERN Document Server

    Imori, M

    2007-01-01

    A low voltage power supply provides the regulated output voltage of 1 V from the supply voltage around 48 V. The low voltage power supply incorporates a ceramic transformer which utilizes piezoelectric effect to convert voltage. The ceramic transformer isolates the secondary from the primary, thus providing the ground isolation between the supply and the output voltages. The ceramic transformer takes the place of the conventional magnetic transformer. The ceramic transformer is constructed from a ceramic bar and does not include any magnetic material. So the low voltage power supply can operate under a magnetic field. The output voltage is stabilized by feedback. A feedback loop consists of an error amplifier, a voltage controlled oscillator and a driver circuit. The amplitude ratio of the transformer has dependence on the frequency, which is utilized to stabilize the output voltage. The low voltage power supply is investigated on the analogy of the high voltage power supply similarly incorporating the cerami...

  1. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  2. Voltage Support Study of Smart PV Inverters on a High-Photovoltaic Penetration Utility Distribution Feeder

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Fei; Pratt, Annabelle; Bialek, Tom; Bell, Frances; McCarty, Michael; Atef, Kahveh; Nagarajan, Adarsh; Gotseff, Peter

    2016-11-21

    This paper reports on tools and methodologies developed to study the impact of adding rooftop photovoltaic (PV) systems, with and without the ability to provide voltage support, on the voltage profile of distribution feeders. Simulation results are provided from a study of a specific utility feeder. The simulation model of the utility distribution feeder was built in OpenDSS and verified by comparing the simulated voltages to field measurements. First, we set all PV systems to operate at unity power factor and analyzed the impact on feeder voltages. Then we conducted multiple simulations with voltage support activated for all the smart PV inverters. These included different constant power factor settings and volt/VAR controls.

  3. Voltage source inverters for high power, variable-voltage DC power sources

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z. [Department of Engineering and Technology, De Montfort University, Queens Building, The Gateway, Leicester, LE1 9BH, (United Kingdom); Spooner, E. [School of Engineering, University of Durham, Science Laboratories, South Rd, Durham, DRI 3LE, (United Kingdom)

    2001-09-01

    The paper discusses the applications of voltage source inverter (VSI) based power electronic systems for interfacing variable-voltage DC sources to the grid. A variable-speed wind power conversion system is used for illustration, where the VSI-based interface needs to convert a variable DC voltage to a nearly constant AC voltage with high-quality power. The power control principles of VSI are described. Various system configurations and switching strategies are examined by analysis, simulation and experimental methods. It is shown that better utilisation of semiconductors and more flexible control may be achieved by using a separately controlled DC link, rather than a directly connected VSI that has to operate at a lower modulation ratio at higher power. In some cases, multipulse inverter structures may be preferred, despite higher component count, because of reduced switching losses, fault tolerance and the absence of filters. The solutions developed in the study could be applied at a different scale to other renewable energy sources, such as wave or solar photovoltaic devices. (Author)

  4. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  5. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W.; Silverstein, Brian L. [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  6. A matter of quantum voltages.

    Science.gov (United States)

    Sellner, Bernhard; Kathmann, Shawn M

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V(o))--the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V(o) from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V(o) for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V(o) as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  7. VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK

    African Journals Online (AJOL)

    VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK: A CASE STUDY OF RUMUOLA DISTRIBUTION NETWORK. ... The artificial neural networks controller engaged to controlling the dynamic voltage ... Article Metrics.

  8. SVPWM Technique with Varying DC-Link Voltage for Common Mode Voltage Reduction in a Matrix Converter and Analytical Estimation of its Output Voltage Distortion

    Science.gov (United States)

    Padhee, Varsha

    converter. This conceivably aids the sizing and design of output passive filters. An analytical estimation method has been presented to achieve this purpose for am IMC. Knowledge of the fundamental component in output voltage can be utilized to calculate its Total Harmonic Distortion (THD). The effectiveness of the proposed SVPWM algorithms and the analytical estimation technique is substantiated by simulations in MATLAB / Simulink and experiments on a laboratory prototype of the IMC. Proper comparison plots have been provided to contrast the performance of the proposed methods with the conventional SVPWM method. The behavior of output voltage distortion and CMV with variation in operating parameters like modulation index and output frequency has also been analyzed.

  9. Voltage controlled resistor using quasi-floating-gate MOSFETs

    Directory of Open Access Journals (Sweden)

    Susheel Sharma

    2013-01-01

    Full Text Available A voltage controlled resistor (VCR using quasi-floating-gate MOSFETs (QFGMOS suitable for low voltage applications is presented. The performance of the VCR implemented with QFGMOS is compared with its floating-gate MOSFET (FGMOS version. It was found that QFGMOS offers better performance than FGMOS in terms of frequency response, offsets and chip area. The VCR using QFGMOS offers high bandwidth and low power dissipation and yields high value of resistance as compared to its FGMOS counterpart. The workability of the presented circuits was tested by PSpice simulations using level 3 parameters of 0.5μm CMOS technology with supply voltage of ± 0.75V. The simulations results were found to be in accordance with the theoretical predictions.

  10. Changes in CdS/CdTe Solar Cells Subjected to Elevated Temperature, Voltage and Illumination

    Science.gov (United States)

    Demtsu, Samuel; Nagle, Tim

    2003-10-01

    CdTe/CdS solar cells have been known to exhibit degradation in performance after being subjected to elevated temperature, voltage and illumination. These conditions are collectively referred to as "stress". We have studied and presented CdTe/CdS cell degradation under different stress conditions of devices from First Solar Inc., the University of South Florida and the University of Toledo. All cells were stressed in the light (close to 100 mW/cm2) for 56 days at elevated temperature of 900C at two different biases, short circuit (SC) and open circuit (OC). The stress condition surpasses the operation conditions expected in the field. To characterize the cells, we have measured current density as function of the applied voltage (JV), capacitance vs bias voltage (CV) and quantum efficiency (QE) measurements before and after exposure to stress. To investigate the spatial non-uniformity of photocurrent collection induced by stress we have done Light Beam-Induced Current (LBIC) measurement. The effect of the stress on the photovoltaic parameters short-circuit current (Jsc), open-circuit voltage (Voc), Fill-Factor (FF), and efficiency is presented and discussed. Carrier density as a function of the distance from the semiconductor junction is extracted from the C-V measurements. We have seen some variations between cells and degradation was not monotonic with stress time. The highly probable explanation for the degradation of the cells after the stress is that mobile copper ions diffuse out of the back contact towards the primary junction leaving a depletion of Cu in the back contact, which increases the contact barrier.

  11. A Novel Neutral Point Voltage Control Strategy for Three-Level NPC APF Based on SVPWM

    Directory of Open Access Journals (Sweden)

    Yao Xiaolong

    2015-01-01

    Full Text Available The unbalance of the neutral point voltage is an inherent problem of three-level neutral-point-clamped (NPC Active Power Filter (APF; this paper analyzes the causes of unbalanced neutral point voltage and studies the reason of the unbalance of the neutral point voltage. A novel neutral point voltage control strategy using Space Vector Pulse Width Modulation (SVPWM is proposed. The proposed strategy is based on the traditional SVPWM, by controlling the effect time of small vector, which can change the state of the midpoint voltage fluctuation, and the neutral point voltage can be maintained balance. The influence of the vector on neutral point balance is investigated in depth. Simulation results show the neutral point voltage balancing control strategy based on SPWM is effective.

  12. The influence of transformers, induction motors and fault resistance regarding propagation voltage sags

    Directory of Open Access Journals (Sweden)

    Jairo Blanco

    2011-07-01

    Full Text Available This article presents an analysis of voltage sag propagation. The ATPDraw tool was selected for simulating the IEEE 34 node test feeder. It takes into account both voltage sags caused by electrical fault network, as well as voltage sag propagation characteristics caused by induction motor starting and transformer energising. The analysis was aimed at assessing the influence of transformer winding connections, the impedance of these transformers, lines and cables, summarising the effects on disturbance magnitude and phase. The study shows that the influence of an induction motor on voltage sag propagation results in increased voltage sag severity. Voltage sags caused by induction motor starting and transformer energising have no zero-sequence component, so they are only affected by type 3 transformers. The influence of fault resistance on voltage sag magnitude and phase characteristics is examined and some aspects of interest in characterising these electromagnetic disturbances is identified.

  13. Cooperative Control with Virtual Selective Harmonic Capacitance for Harmonic Voltage Compensation in Islanded MicroGrids

    DEFF Research Database (Denmark)

    Micallef, A.; Apap, M.; Spitero-Stanies, C.

    2012-01-01

    This paper focuses on the islanded operation of microgrids. In this mode of operation, the microsources are required to cooperate autonomously to regulate the local grid voltage and frequency. Droop control is typically used to achieve this autonomous voltage and frequency regulation. Inverters...... having LCL output filters would cause voltage distortion to be present at the PCC of the local load when non-linear current is supplied to the load due to the voltage drop across the grid side inductor. Techniques to reduce the output voltage distortion typically consist of installing either passive...... loop, implemented in each of the microsource inverters, is proposed so as to dampen the voltage harmonics at the PCC of the local load. Simulation results are presented showing the suitability of the proposed algorithm in dampening the PCC voltage harmonics....

  14. Numerical analysis on the effect of voltage change on removing condensed water inside the GDL of a PEM fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Nam Woo [Fuel Cell Technology Development Team, Eco-Technology Center, Hyundai-Kia Motors, Yongin (Korea, Republic of); Kim, Young Sang; Kim, Min Soo [Dept. of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Kim, Min Sung [School of Energy Systems Engineering, Chung-Ang University, Seoul (Korea, Republic of)

    2016-09-15

    Decreasing the voltage of a fuel cell through hydrogen mixing or using low-air stoichiometry ratio is beneficial to remove condensed water inside GDL under flooding condition. In this study, the effect of voltage level of a fuel cell on water distribution in GDL under flooding condition was numerically analyzed. Water content in GDL was dependent on the voltage level of a fuel cell, that is, the water content was low when the cell voltage was maintained low. The effect of voltage change under flooding condition was also simulated. The flow rate of condensed water inside GDL considerably increased immediately after decreasing the cell voltage. The oxygen concentration in the catalyst layer was increased by decreasing the voltage of the fuel cell. Consequently, the cell voltage was recovered. Therefore, decreasing cell voltage under flooding condition can facilitate removal of condensed water in GDL.

  15. Electrode voltage fall and total voltage of a transient arc

    Science.gov (United States)

    Valensi, F.; Ratovoson, L.; Razafinimanana, M.; Masquère, M.; Freton, P.; Gleizes, A.

    2016-06-01

    This paper deals with an experimental study of the components of a transient arc total voltage with duration of a few tens of ms and a current peak close to 1000 A. The cathode tip is made of graphite whereas the flat anode is made either of copper or of graphite; the electrodes gap is a few mm. The analysis of the electrical parameters is supported and validated by fast imaging and by two models: the first one is a 2D physical model of the arc allowing to calculate both the plasma temperature field and the arc voltage; the second model is able to estimate the transient heating of the graphite electrode. The main aim of the study was to detect the possible change of the cathode voltage fall (CVF) during the first instants of the arc. Indeed it is expected that during the first ms the graphite cathode is rather cool and the main mechanism of the electron emission should be the field effect emission, whereas after several tens of ms the cathode is strongly heated and thermionic emission should be predominant. We have observed some change in the apparent CVF but we have shown that this apparent change can be attributed to the variation of the solid cathode resistance. On the other hand, the possible change of CVF corresponding to the transition between a ‘cold’ and a ‘hot’ cathode should be weak and could not be characterized considering our measurement uncertainty of about 2 V. The arc column voltage (ACV) was estimated by subtracting the electrode voltage fall from the total arc voltage. The experimental transient evolution of the ACV is in very good agreement with the theoretical variation predicted by the model, showing the good ability of the model to study this kind of transient arc.

  16. Optimization of Temperature Coefficient and Noise Analysis of MOSFET- Only Voltage Reference Circuit

    Directory of Open Access Journals (Sweden)

    Arathi.p

    2016-09-01

    Full Text Available The optimization of temperature coefficient and comparison of output noise of two MOSFET only voltage references are introduced. The circuit behavior is analytically described and the performance of the proposed circuits are confirmed through 180nm CMOS technology in virtuoso and the simulation results are presented. Both the circuits can be operated with supply voltage varies from 0.5-1.2V.The output voltage references varied over a temperature range of -25℃ to 50℃.

  17. Measurements for validation of high voltage underground cable modelling

    DEFF Research Database (Denmark)

    Bak, Claus Leth; Gudmundsdottir, Unnur Stella; Wiechowski, Wojciech Tomasz

    2009-01-01

    This paper discusses studies concerning cable modelling for long high voltage AC cable lines. In investigating the possibilities of using long cables instead of overhead lines, the simulation results must be trustworthy. Therefore a model validation is of great importance. This paper describes...

  18. 阶梯型脉冲电压诱导连续能量质子谱数值仿真%Numerical simulation of proton generation with continuous energy spectrum by pulse voltage with discrete steps

    Institute of Scientific and Technical Information of China (English)

    石经纬; 汪志健; 巩春志; 田修波; 杨士勤

    2011-01-01

    The performance degradation of spacecraft thermal control coatings irradiated by protons is generally investigated by using protons with the same energy in ground testing while the energy of protons is in succession in space. The irradiation e-quivalence of the two kinds of protons is still not well understood. In this paper, a method of producing protons with continuous energy by plasma sheath acceleration using pulse voltage with discrete steps is proposed for better analysis of irradiation equivalence. The dose-energy distribution on the sample is numerically investigated by particle-in-cell(PIC) method. The characteristics of dose-energy distribution and the formation mechanism of protons with continuous energy are then discussed. The results show that protons with continuous energy can be realized utilizing pulse voltage with discrete steps, as the energy of protons irradiating the sample overlaps between two adjacent 1 μs periods, and the energy of protons produced is closely related to the voltage on the sample in every 1 μs period. Moreover, the number of protons irradiating the sample may decrease if the proton energy increases.%热控涂层质子辐照的地面模拟研究中采用单一能量质子替代空间能量连续分布的质子,连续能量质子谱是其等效性研究的关键.提出了采用阶梯型脉冲负偏压鞘层加速技术在一个脉冲宽度内获得连续能量质子谱的方法,并利用质点网格法对所获得质子谱的剂量-能量关系进行了数值仿真研究,分析了连续能量质子谱的剂量-能量分布特征及连续能量质子谱的形成过程.结果表明:阶梯型脉冲负偏压鞘层加速能够产生连续能量的质子谱,连续谱是每微秒区间入射到样品的质子叠加而成的,且每个区间所产生质子的能量与该区间电压值相对应,连续谱中,随着质子能量的增加,其剂量总体上呈现下降的趋势.

  19. Unbalanced Voltage Compensation in Low Voltage Residential AC Grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design and test of a control algorithm for active front-end rectifiers that draw power from a residential AC grid to feed heat pump loads. The control algorithm is able to control the phase to neutral or phase to phase RMS voltages at the point of common coupling....... The voltage control was evaluated with either active or reactive independent phase load current control. The control performance in field operation in a residential grid situated in Bornholm, Denmark was investigated for different use cases....

  20. Automated Voltage Control in LHCb

    CERN Document Server

    Granado Cardoso, L; Jacobsson, R

    2011-01-01

    LHCb is one of the 4 LHC experiments. In order to ensure the safety of the detector and to maximize efficiency, LHCb needs to coordinate its own operations, in particular the voltage configuration of the different subdetectors, according to the accelerator status. A control software has been developed for this purpose, based on the Finite State Machine toolkit and the SCADA system used for control throughout LHCb (and the other LHC experiments). This software permits to efficiently drive both the Low Voltage (LV) and High Voltage (HV) systems of the 10 different sub-detectors that constitute LHCb, setting each sub-system to the required voltage (easily configurable at run-time) based on the accelerator state. The control software is also responsible for monitoring the state of the Sub-detector voltages and adding it to the event data in the form of status-bits. Safe and yet flexible operation of the LHCb detector has been obtained and automatic actions, triggered by the state changes of the ...

  1. Application of Distribution Power Electronic Transformer for Medium Voltage

    Directory of Open Access Journals (Sweden)

    Prashant Kumar

    2014-12-01

    Full Text Available In   this   paper   a   distribution   power electronic transformer (DPET for feeding critical loads is presented. The PE based transformer is a multi-port converter that can connect to medium voltage levels on the primary side. Bidirectional power flow is provided to the each module. The presented structure consists of three stages: an input stage, an isolation stage, and an output stage.  The input current is sinusoidal, and it converts the high AC input voltage to low DC voltages. The isolated DC/DC converters are then connected to the DC links and provide galvanic isolation between the HV and LV sides. Finally, a three-phase inverter generates the AC output with the desired amplitude and frequency. The proposed DPET is extremely modular and can be extended for different voltage and power levels. It performs typical functions and has advantages such as power factor correction, elimination of voltage sag and swell, and reduction of voltage flicker in load side. Also in comparison to conventional transformers, it has lower weight, lower volume and eliminates necessity for toxic dielectric coolants the DPET performance is verified in MATLAB simulation.

  2. Application of Multipoint DC Voltage Control in VSC-MTDC System

    Directory of Open Access Journals (Sweden)

    Yang Xi

    2013-01-01

    Full Text Available The voltage-source-converter- (VSC- based multiterminal VSC-HVDC power transmission system (VSC-MTDC is an ideal approach to connect wind farm with power grid. Analyzing the characteristics of doubly fed induction generators as well as the basic principle and the control strategy of VSC-MTDC, a multiterminal DC voltage control strategy suitable for wind farm connected with VSC-MTDC is proposed. By use of PSCAD/EMTDC, the proposed control strategy is simulated, and simulation results show that using the proposed control strategy the conversion between constant power control mode and constant DC voltage control mode can be automatically implemented; thus the DC voltage stability control and reliable power output of wind farm can be ensured after the fault-caused outage of converter station controlled by constant DC voltage and under other faults. The simulation result shows that the model can fulfill multiterminal power transmission and fast response control.

  3. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Arash Toudeshki; Norman Mariun; Hashim Hizam; Noor Izzri Abdul Wahab

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  4. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  5. Simple buck/boost voltage regulator

    Science.gov (United States)

    Paulkovich, J.; Rodriguez, G. E.

    1980-01-01

    Circuit corrects low or high supply voltage, produces regulated output voltage. Circuit has fewer components because inductory/transformer combination and pulse-width modulator serve double duty. Regulator handles input voltage variation from as low as one half output voltage to as high as input transistor rating. Solar arrays, fuel cells, and thermionic generators might use this regulator.

  6. 30 CFR 18.47 - Voltage limitation.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Voltage limitation. 18.47 Section 18.47 Mineral... § 18.47 Voltage limitation. (a) A tool or switch held in the operator's hand or supported against his... particular voltage(s) are provided in the design and construction of the equipment, its wiring,...

  7. Square-Wave Voltage Injection Algorithm for PMSM Position Sensorless Control With High Robustness to Voltage Errors

    DEFF Research Database (Denmark)

    Ni, Ronggang; Xu, Dianguo; Blaabjerg, Frede

    2017-01-01

    relationship with the magnetic field distortion. Position estimation errors caused by higher order harmonic inductances and voltage harmonics generated by the SVPWM are also discussed. Both simulations and experiments are carried out based on a commercial PMSM to verify the superiority of the proposed method...

  8. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  9. Electron beam induced water-soluble silk fibroin nanoparticles as a natural antioxidant and reducing agent for a green synthesis of gold nanocolloid

    Science.gov (United States)

    Wongkrongsak, Soraya; Tangthong, Theeranan; Pasanphan, Wanvimol

    2016-01-01

    The research proposes a novel water-soluble silk fibroin nanoparticles (WSSF-NPs) created by electron beam irradiation. In this report, we demonstrate the effects of electron beam irradiation doses ranging from 1 to 30 kGy on the molecular weight (MW), nanostructure formation, antioxidant activity and reducing power of the WSSF-NPs. Electron beam-induced degradation of SF causing MW reduction from 250 to 37 kDa. Chemical characteristic functions of SF still remained after exposing to electron beam. The WSSF-NPs with the MW of 37 kDa exhibited spherical morphology with a nanoscaled size of 40 nm. Antioxidant activities and reducing powers were investigated using 2,2-diphenyl-1-picrylhryl free radical (DPPH•) scavenging activity and ferric reducing antioxidant power (FRAP) assays, respectively. The WSSF-NPs showed greater antioxidant activity and reducing power than non-irradiated SF. By increasing their antioxidant and reducing power efficiencies, WSSF-NPs potentially created gold nanocolloid. WSSF-NPs produced by electron beam irradiation would be a great merit for the uses as a natural antioxidant additive and a green reducing agent in biomedical, cosmetic and food applications.

  10. SiO{sub 2}/TiO{sub 2} thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gracia, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Holgado, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain)]. E-mail: arge@icmse.csic.es; Girardeau, T. [Laboratoire de Metallurgie Physique de Poitiers, UMR 6630 CNRS, Bat SP2MI BP 30179, 86962-Futuroscope-Chasseneuil Cedex (France)

    2006-04-03

    SiO{sub 2}/TiO{sub 2} optical thin films with variable compositions have been prepared by ion beam induced and plasma enhanced chemical vapour deposition (IBICVD and PECVD). While the films obtained by IBICVD were very compact, the PECVD ones with a high content of Ti presented a columnar microstructure. The formation of Si-O-Ti bonds and a change in the environment around titanium from four- to six-coordinated has been proved by vibrational and X-ray absorption spectroscopies. The refractive index increased with the titanium content from 1.45 to 2.46 or 2.09 for, respectively, the IBICVD and PECVD films. Meanwhile, the band gap decreased, first sharply and then more smoothly up to the value of pure TiO{sub 2}. It is concluded that the optical properties of SiO{sub 2}/TiO{sub 2} thin films can be properly tailored by using these two procedures.

  11. Amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope fabricated by low-energy ion beam induced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Matsutani, Takaomi, E-mail: matutani@ele.kindai.ac.jp [Kindai University, 3-4-1 Kowakae, Higashi-osaka, Osaka 577-8502 (Japan); Yamasaki, Kayo [Kindai University, 3-4-1 Kowakae, Higashi-osaka, Osaka 577-8502 (Japan); Imaeda, Norihiro; Kawasaki, Tadahiro [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-12-15

    An amorphous silicon carbonitride (a-SiCN) diaphragm for an environmental-cell transmission electron microscope (E-TEM) was fabricated by low-energy ion beam induced chemical vapor deposition (LEIBICVD) with hexamethyldisilazane (HMDSN). The films were prepared by using gaseous HMDSN and N{sub 2}{sup +} ions with energies ranging from 300 to 600 eV. The diaphragms were applied to Si (1 0 0) and a Cu grid with 100-μm-diameter holes. With increasing ion energy, these diaphragms became perfectly smooth surfaces (RMS = 0.43 nm at 600 eV), as confirmed by atomic force microscopy and TEM. The diaphragms were amorphous and transparent to 200 kV electrons, and no charge-up was observed. Fourier transform infrared spectra and X-ray photoelectron spectra revealed that the elimination of organic compounds and formation of Si–N and C–N bonds can be promoted in diaphragms by increasing the ion impact energy. The resistance to electron beams and reaction gases in the E-cell was improved when the diaphragm was formed with high ion energy.

  12. Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.

    Science.gov (United States)

    Tchernycheva, M; Neplokh, V; Zhang, H; Lavenus, P; Rigutti, L; Bayle, F; Julien, F H; Babichev, A; Jacopin, G; Largeau, L; Ciechonski, R; Vescovi, G; Kryliouk, O

    2015-07-21

    We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully operational devices allows to probe the electrical properties of the active region with a nanoscale resolution. In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is assessed in top view and cross-sectional geometries. The EBIC maps combined with CL characterization demonstrate the impact of the compositional gradients along the wire axis on the electrical and optical signals: the reduction of the EBIC signal toward the nanowire top is accompanied by an increase of the CL intensity. This effect is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency. The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal. This observation is explained by the presence of charged traps at this interface, which can be saturated by electron irradiation.

  13. Superconductivity in the system Mo{sub x}C{sub y}Ga{sub z}O{sub δ} prepared by focused ion beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Weirich, P. M., E-mail: p.weirich@Physik.uni-frankfurt.de; Schwalb, C. H.; Winhold, M.; Huth, M. [Physikalisches Institut, Goethe-University, 60438 Frankfurt am Main (Germany)

    2014-05-07

    We have prepared the new amorphous superconductor Mo{sub x}C{sub y}Ga{sub z}O{sub δ} with a maximum critical temperature T{sub c} of 3.8 K by the direct-write nano-patterning technique of focused (gallium) ion beam induced deposition (FIBID) using Mo(CO){sub 6} as precursor gas. From a detailed analysis of the temperature-dependent resistivity and the upper critical field, we found clear evidence for proximity of the samples to a disorder-induced metal-insulator transition. We observed a strong dependence of T{sub c} on the deposition parameters and identified clear correlations between T{sub c}, the localization tendency visible in the resistance data and the sample composition. By an in-situ feedback-controlled optimization process in the FIB-induced growth, we were able to identify the beam parameters which lead to samples with the largest T{sub c}-value and sharpest transition into the superconducting state.

  14. Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se{sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kavalakkatt, J.; Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Nichterwitz, M.; Caballero, R.; Rissom, T.; Unold, T.; Scheer, R.; Schock, H. W. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz. 1, 14109 Berlin (Germany); Haarstrich, J.; Ronning, C. [Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

    2014-01-07

    The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se{sub 2} (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.

  15. Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se2 thin-film solar cells

    Science.gov (United States)

    Kavalakkatt, J.; Abou-Ras, D.; Haarstrich, J.; Ronning, C.; Nichterwitz, M.; Caballero, R.; Rissom, T.; Unold, T.; Scheer, R.; Schock, H. W.

    2014-01-01

    The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se2 (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.

  16. Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2

    Science.gov (United States)

    Ruffino, F.; Grimaldi, M. G.; Giannazzo, F.; Roccaforte, F.; Raineri, V.; Bongiorno, C.; Spinella, C.

    2009-04-01

    Gold nanoclusters (NCs) were produced in thin SiO2 film by a sequential sputtering deposition procedure. In situ time-lapse studies of the NCs size distribution and morphology under 200 keV electron-beam irradiation have been performed using a transmission electron microscopy. Such a study has revealed the microscopic kinetic mechanisms of the NCs growth. In the 0-1620 s irradiation time range, the NCs growth process was found to be formed by two stages: in the 0-720 s time range, the main growth mechanism is demonstrated to be an electron beam-induced ripening of three-dimensional particles controlled by the Au diffusion in the SiO2 matrix. The application of the classical ripening theoretical model allowed us to derive the room-temperature Au diffusion coefficient in SiO2 under the electron-beam irradiation. In the 900-1620 s time range, the main growth mechanism is found to be a particle sintering in which neighbouring NCs form necks, by a partial deformation of their surfaces, through which the Au atomic diffusion occurs from the smaller NCs to the larger one. About the NCs morphology, three main classes of NCs were identified on the basis of their internal atomic structure, as a function of the irradiation time: FCC crystal structure, icosahedral-defect free structure and decahedral multi-twinned structure.

  17. Electron Induced Surface Reactions of cis-Pt(CO)2Cl2: A Route to Focused Electron Beam Induced Deposition of Pure Pt Nanostructures.

    Science.gov (United States)

    Spencer, Julie A; Wu, Yung-Chien; McElwee-White, Lisa; Fairbrother, D Howard

    2016-07-27

    Using mechanistic data from surface science studies on electron-induced reactions of organometallic precursors, cis-Pt(CO)2Cl2 (1) was designed specifically for use in focused electron beam induced deposition (FEBID) of Pt nanostructures. Electron induced decomposition of adsorbed 1 under ultrahigh vacuum (UHV) conditions proceeds through initial CO loss as determined by in situ X-ray photoelectron spectroscopy and mass spectrometry. Although the Pt-Cl bonds remain intact during the initial decomposition step, larger electron doses induce removal of the residual chloride through an electron-stimulated desorption process. FEBID structures created from cis-Pt(CO)2Cl2 under steady state deposition conditions in an Auger spectrometer were determined to be PtCl2, free of carbon and oxygen. Coupled with the electron stimulated removal of chlorine demonstrated in the UHV experiments, the Auger deposition data establish a route to FEBID of pure Pt. Results from this study demonstrate that structure-activity relationships can be used to design new precursors specifically for FEBID.

  18. Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, F; Grimaldi, M G [Dipartimento di Fisica e Astronomia, Universita di Catania, via S Sofia 64, I-95123 Catania (Italy) and MATIS CNR-INFM (Italy); Giannazzo, F; Roccaforte, F; Raineri, V; Bongiorno, C; Spinella, C [Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM) VIII Strada 5, I-95121 Catania (Italy)

    2009-04-07

    Gold nanoclusters (NCs) were produced in thin SiO{sub 2} film by a sequential sputtering deposition procedure. In situ time-lapse studies of the NCs size distribution and morphology under 200 keV electron-beam irradiation have been performed using a transmission electron microscopy. Such a study has revealed the microscopic kinetic mechanisms of the NCs growth. In the 0-1620 s irradiation time range, the NCs growth process was found to be formed by two stages: in the 0-720 s time range, the main growth mechanism is demonstrated to be an electron beam-induced ripening of three-dimensional particles controlled by the Au diffusion in the SiO{sub 2} matrix. The application of the classical ripening theoretical model allowed us to derive the room-temperature Au diffusion coefficient in SiO{sub 2} under the electron-beam irradiation. In the 900-1620 s time range, the main growth mechanism is found to be a particle sintering in which neighbouring NCs form necks, by a partial deformation of their surfaces, through which the Au atomic diffusion occurs from the smaller NCs to the larger one. About the NCs morphology, three main classes of NCs were identified on the basis of their internal atomic structure, as a function of the irradiation time: FCC crystal structure, icosahedral-defect free structure and decahedral multi-twinned structure.

  19. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  20. Electron beam-induced structural transformations of MoO{sub 3} and MoO{sub 3-x} crystalline nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Droguett, D. E., E-mail: dodiaz@fis.puc.cl [Pontificia Universidad Catolica de Chile, Departamento de Fisica, Facultad de Fisica (Chile); Zuniga, A. [Universidad de Chile, Departamento de Ingenieria Mecanica, Facultad de Ciencias Fisicas y Matematicas (Chile); Solorzano, G. [PUC-RIO, Departamento de Ciencia dos Materiais e Metalurgia, DCMM (Brazil); Fuenzalida, V. M. [Universidad de Chile, Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas (Chile)

    2012-01-15

    Electron beam-induced damage and structural changes in MoO{sub 3} and MoO{sub 3-x} single crystalline nanostructures were revealed by in situ transmission electron microscopy (TEM) examination (at 200 kV) after few minutes of concentrating the electron beam onto small areas (diameters between 25 and 200 nm) of the samples. The damage was evaluated recording TEM images, while the structural changes were revealed acquiring selected area electron diffraction patterns and high resolution transmission electron microscopy (HRTEM) images after different irradiation times. The as-received nanostructures of orthorhombic MoO{sub 3} were transformed to a Magneli's phase of the oxide ({gamma}-Mo{sub 4}O{sub 11}) after {approx}10 min of electron beam irradiation. The oxygen loss from the oxide promoted structural changes. HRTEM observations showed that, in the first stage of the reduction, oxygen vacancies generated by the electron beam are accommodated by forming crystallographic shear planes. At a later stage of the reduction process, a polycrystalline structure was developed with highly oxygen-deficient grains. The structural changes can be attributed to the local heating of the irradiated zone combined with radiolysis.