WorldWideScience

Sample records for beam etching replication

  1. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  2. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  3. Single beam determination of porosity and etch rate in situ during etching of porous silicon

    Science.gov (United States)

    Foss, S. E.; Kan, P. Y. Y.; Finstad, T. G.

    2005-06-01

    A laser reflection method has been developed and tested for analyzing the etching of porous silicon (PS) films. It allows in situ measurement and analysis of the time dependency of the etch rate, the thickness, the average porosity, the porosity profile, and the interface roughness. The interaction of an infrared laser beam with a layered system consisting of a PS layer and a substrate during etching results in interferences in the reflected beam which is analyzed by the short-time Fourier transform. This method is used for analysis of samples prepared with etching solutions containing different concentrations of HF and glycerol and at different current densities and temperatures. Variations in the etch rate and porosity during etching are observed, which are important effects to account for when optical elements in PS are made. The method enables feedback control of the etching so that PS films with a well-controlled porosity are obtainable. By using different beam diameters it is possible to probe interface roughness at different length scales. Obtained porosity, thickness, and roughness values are in agreement with values measured with standard methods.

  4. Surface characterization after subaperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2010-07-01

    In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

  5. E-beam inspection of EUV mask defects: To etch or not to etch?

    Science.gov (United States)

    Bonam, Ravi; Tien, Hung-Yu; Park, Chanro; Halle, Scott; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack

    2014-04-01

    EUV Lithography is aimed to be inserted into mainstream production for sub-20nm pattern fabrication. Unlike conventional optical lithography, frequent defectivity monitors (adders, repeaters etc.) are required in EUV lithography. Due to sub-20nm pattern and defect dimensions e-beam inspection of critical pattern areas is essential for yield monitor. In previous work we showed sub-10nm defect detection sensitivity1 on patterned resist wafers. In this work we report 8-10× improvement in scan rates of etched patterns compared to resist patterns without loss in defect detection sensitivity. We observed good etch transfer of sub-10nm resist features. A combination of smart scan strategies with improved etched pattern scan rates can further improve throughput of e-beam inspection. An EUV programmed defect mask with Line/Space, Contact patterns was used to evaluate printability of defects and defect detection (Die-Die and Die-Database) capability of the e-beam inspection tool. Defect inspection tool parameters such as averaging, threshold value were varied to assess its detection capability and were compared to previously obtained results on resist patterns.

  6. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Anglin, Kevin, E-mail: kevin.r.anglin@gmail.com; Goodhue, William D. [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States); Swint, Reuel B.; Porter, Jeanne [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  7. Focused electron beam induced etching of titanium with XeF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Schoenaker, F J; Cordoba, R; Fernandez-Pacheco, R; Magen, C; Zuriaga-Monroy, C; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50018 Zaragoza (Spain); Stephan, O [Laboratoire de Physique des Solides, CNRS UMR 8502, Universite Paris Sud XI, Batiment 510, F-91405 Orsay (France); De Teresa, J M, E-mail: deteresa@unizar.es [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain)

    2011-07-01

    Titanium is a relevant technological material due to its extraordinary mechanical and biocompatible properties, its nanopatterning being an increasingly important requirement in many applications. We report the successful nanopatterning of titanium by means of focused electron beam induced etching using XeF{sub 2} as a precursor gas. Etch rates up to 1.25 x 10{sup -3} {mu}m{sup 3} s{sup -1} and minimum pattern sizes of 80 nm were obtained. Different etching parameters such as beam current, beam energy, dwell time and pixel spacing are systematically investigated, the etching process being optimized by decreasing both the beam current and the beam energy. The etching mechanism is investigated by transmission electron microscopy. Potential applications in nanotechnology are discussed.

  8. Electron Beam Etching of CaO Crystals Observed Atom by Atom.

    Science.gov (United States)

    Shen, Yuting; Xu, Tao; Tan, Xiaodong; Sun, Jun; He, Longbing; Yin, Kuibo; Zhou, Yilong; Banhart, Florian; Sun, Litao

    2017-08-09

    With the rapid development of nanoscale structuring technology, the precision in the etching reaches the sub-10 nm scale today. However, with the ongoing development of nanofabrication the etching mechanisms with atomic precision still have to be understood in detail and improved. Here we observe, atom by atom, how preferential facets form in CaO crystals that are etched by an electron beam in an in situ high-resolution transmission electron microscope (HRTEM). An etching mechanism under electron beam irradiation is observed that is surprisingly similar to chemical etching and results in the formation of nanofacets. The observations also explain the dynamics of surface roughening. Our findings show how electron beam etching technology can be developed to ultimately realize tailoring of the facets of various crystalline materials with atomic precision.

  9. Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

    NARCIS (Netherlands)

    Gonzalez, Carlos M.; Timilsina, Rajendra; Li, Guoliang; Duscher, Gerd; Rack, Philip D.; Slingenbergh, Winand; van Dorp, Willem F.; De Hosson, Jeff T. M.; Klein, Kate L.; Wu, Huimeng M.; Stern, Lewis A.

    2014-01-01

    The gas field ion microscope was used to investigate helium and neon ion beam induced etching of nickel as a candidate technique for extreme ultraviolet (EUV) lithography mask editing. No discernable nickel etching was observed for room temperature helium exposures at 16 and 30 keV in the dose range

  10. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Songkil; Henry, Mathias [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Fedorov, Andrei G., E-mail: agf@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Parker H. Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2015-12-07

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon “halo” deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations.

  11. In-situ end-point detection during ion-beam etching of multilayer dielectric gratings

    Institute of Scientific and Technical Information of China (English)

    Hua Lin; Lifeng Li; Lijiang Zeng

    2005-01-01

    @@ An in-situ end-point detection technique for ion-beam etching is presented. A laser beam of the same wavelength and polarization as those in the intended application of the grating is fed into the vacuum chamber, and the beam retro-diffracted by the grating under etching is extracted and detected outside the chamber. This arrangement greatly simplifies the end-point detection. Modeling the grating diffraction with a rigorous diffraction grating computer program, we can satisfactorily simulate the evolution of the diffraction intensity during the etching process and consequently, we can accurately predict the end-point.Employing the proposed technique, we have reproducibly fabricated multilayer dielectric gratings with diffraction efficiencies of more than 92%.

  12. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Science.gov (United States)

    Liebes, Yael; Hadad, Binyamin; Ashkenasy, Nurit

    2011-07-01

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  13. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Liebes, Yael; Ashkenasy, Nurit [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Hadad, Binyamin, E-mail: nurita@bgu.ac.il [The Ilze Kaz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel)

    2011-07-15

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  14. Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    Science.gov (United States)

    Banks, B. A. (Inventor)

    1984-01-01

    The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

  15. A process study of electron beam nano-lithography and deep etching with an ICP system

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    A systemic process study on an electron beam nanolithography system operating at 100kV was pre-sent.The exposure conditions were optimized for resist ZEP520A.Grating structures with line/space of 50nm/50nm were obtained in a reasonably thick resist which is beneficial to the subsequent pattern transfer technique.The ICP etching process conditions was optimized.The role of etching parameters such as source power,gas pressure,and gas flow rate on the etching result was also discussed.A grating structure with line widths as small as 100nm,duty cycles of 0.5,depth of 900nm,and the side-wall scalloping as small as 5nm on a silicon substrate was obtained.The silicon deep etching technique for structure sizes smaller than 100nm is very important for the fabrication of nano-optical devices working in the visible regime.

  16. Fine-tuning the etch depth profile via dynamic shielding of ion beam

    CERN Document Server

    Wu, Lixiang; Fu, Shaojun

    2016-01-01

    We introduce a method for finely adjusting the etch depth profile by dynamic shielding in the course of ion beam etching (IBE), which is crucial for the ultra-precision fabrication of large optics. We study the physical process of dynamic shielding and propose a parametric modeling method to quantitatively analyze the shielding effect on etch depths, or rather the shielding rate, where a piecewise Gaussian model is adopted to fit the shielding rate profile. We have conducted two experiments. In the experiment on parametric modeling of shielding rate profiles, its result shows that the shielding rate profile is significantly influenced by the rotary angle of the leaf. And the experimental result of fine-tuning the etch depth profile shows good agreement with the simulated result, which preliminarily verifies the feasibility of our method.

  17. Nanoscale ripple formation in Co/Si(100) thin films with Ar{sup +} beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Arranz, M A [Fac. Ciencias Quimicas, Universidad de Castilla-La Mancha, Camilo Jose Cela 10, 13071, Ciudad Real (Spain); Colino, Jose M, E-mail: HiguelAngel.Arranz@uclm.e [Instituto de Nanociencia, NanotecnologIa y Materiales Moleculares, UCLM, Campus de la Fabrica de Armas, 45071 Toledo (Spain)

    2010-01-01

    We have investigated the formation of nanoscale ripples on etched Co/Si(100) films with Ar{sup +} beam in grazing incidence. Topography and dimensions of those nanoscale patterns were characterized by means of atomic force microscopy. Polycrystalline cobalt thin films were deposited by d.c. magnetron sputtering onto Si(100) wafers and, later transferred in situ to a process chamber for the production of ripples. Their average width, W{sub d}, and separation between them, i.e. their periodicity {Lambda}, were found to monotonously increase first with the etching time and, finally, reach saturation values for long irradation times (around 30 min). The same Ar{sup +} beam etching applied on thicker Co films resulted in much wider and higher ripples, providing a more defined nanostructure for ulterior uniaxial magnetic anisotropy measurements. These changes in the ripple dimensions on increasing the Co film thickness are discussed in terms of the surface roughness in the as-deposited film.

  18. Photonic crystals in lithium niobate by combining focussed ion beam writing and ion-beam enhanced etching

    Energy Technology Data Exchange (ETDEWEB)

    Geiss, Reinhard; Diziain, Severine; Steinert, Michael; Schrempel, Frank; Kley, Ernst-Bernhard; Pertsch, Thomas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743, Jena (Germany); Tuennermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743, Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Str. 7, 07745, Jena (Germany)

    2014-10-15

    The realization of photonic crystals in self-suspended lithium niobate membranes by means of focussed ion beam writing and ion-beam enhanced etching is presented. The influence of gallium contamination is discussed and considered in the realization of a L3 photonic crystal resonator that is showing the designed linear optical response in a cross-polarization resonant scattering experiment. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

    2012-07-01

    In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using a Kaufman-typed ion source with NF{sub 3} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2'' fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

  20. Deep reactive ion etching and focused ion beam combination for nanotip fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Villanueva, G. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain); Plaza, J.A. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain)]. E-mail: JoseAntonio.Plaza@cnm.es; Sanchez-Amores, A. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain); Bausells, J. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain); Martinez, E. [Nanobioengineering Laboratory (CREBEC), Barcelona Science Park, Josep Samitier 1-5, 08028 Barcelona (Spain); Samitier, J. [Nanobioengineering Laboratory (CREBEC), Barcelona Science Park, Josep Samitier 1-5, 08028 Barcelona (Spain); Errachid, A. [Nanobioengineering Laboratory (CREBEC), Barcelona Science Park, Josep Samitier 1-5, 08028 Barcelona (Spain)

    2006-03-15

    We have studied the fabrication of high-aspect ratio silicon tips by a combination of deep reactive ion etching and focused ion beam. The reactive ion etching is used to obtain so-called 'rocket tips' which can be fabricated with a high aspect ratio. The rocket tips are further processed by using a focused ion beam to obtain nanotips at their apex. Typical results obtained are nanotips with a basis radius of 200 nm and a height of 2.5 {mu}m, with an apex radius of 5 nm, located on top of a 3 {mu}m wide and 9 {mu}m high silicon column. The process would allow however obtaining column heights of several tens of microns.

  1. Improvement of a block co-polymer (PS-b-PMMA)-masked silicon etch profile using a neutral beam

    Science.gov (United States)

    Yun, Deokhyun; Park, Jinwoo; Kim, Hwasung; Mun, Jeongho; Kim, Sangouk; Kim, Kyongnam; Yeom, Geunyoung

    2016-09-01

    Bottom-up block copolymer (BCP) lithography mediated by self-assembly of polystyrene (PS)/poly-methyl methacrylate (PMMA) is widely used as an alternative patterning method for various deep nanoscale devices, such as optical devices and transistors, replacing conventional top-down photolithography. However, the nanoscale BCP mask features formed on the substrates after direct self-assembly of BCP tend to be easily damaged during exposure to the following plasma processing. In this study, silicon masked with a nanoscale BCP mask (PS) was etched by irradiating with a Cl2/Ar neutral beam in addition to a Cl2/Ar ion beam, and the effect of a Cl2/Ar neutral beam instead of a Cl2/Ar ion beam on damage to the PS mask and the silicon etch characteristics of nanodevices was investigated. The results show that the use of a neutral beam instead of an ion beam decreased degradation of the BCP mask during etching; therefore, a more anisotropic silicon etch profile in addition to improved etch selectivity of silicon compared to the BCP mask was observed. Moreover, by using the neutral beam, the sidewall roughness and sidewall angle also improved due to the decreased surface charge and reduced damage to the nanoscale PS mask resulting from use of a highly directional radical beam instead of a conventional ion-based beam.

  2. Ion beam etching of multilevel masking layers written by two-photon lithography

    Science.gov (United States)

    Schmitt, Jana; Hengsbach, Stefan; Bade, Klaus; Wallrabe, Ulrike; Völklein, Friedemann

    2017-07-01

    Ion beam etching (IBE) provides high surface quality. Finding suitable masking layers is one of the key issues for process optimization. In case of high-intensity and long-term IBE conventional photoresists are not appropriate as masking layers. As an alternative in terms of thermal durability, photoresist masking layers polymerized with two-photon lithography were investigated here and their IBE etch rates were measured. A hard bake (200 °C) lowered them due to higher crosslinking without an alteration of the structure shapes. Two-photon lithography enables the fabrication of multilevel structures which can be etched in one process step. Two types of 3D masking layers were transferred into fused silica to demonstrate this approach. Diffractive structures were chosen because their diffraction efficiency benefits from the high surface quality provided by IBE and it is influenced by fabrication induced deviations of the geometry: 3D line gratings with overlapping photoresist areas are a new approach to avoid delamination problems without the necessity of the integration of unwanted gaps into the resist patterns. Measurements proved good agreement of the diffraction efficiency with simulated results, differ only by 1.14%. The transfer of blazed grating structures illustrated the effect of the angle dependence of the etch rate. The transferred structures showed good agreement with the step heights forecast on the basis of process selectivity.

  3. Symmetrical fully-etched and chirped beam splitter based on a subwavelength binary blazed grating

    Institute of Scientific and Technical Information of China (English)

    ZHOU Wei; ZHANG Hua-liang; YANG Jun-bo; YANG Jun-cai

    2012-01-01

    A novel synmetrical chirped beam splitter based on a binary blazed grating is proposed,which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and convenient for integration and manufacture process.This structure can realize nearly equal-power splitting operation under the condition of TE polarization incidence.When the absolutely normal incidence occurs at the wavelength of 1580 nm,the coupling efficiencies of the left and the right branches are 43.627% and 43.753%,respectively.Moreover,this structure has the tolerances of 20 nm in etched depth and 3° in incident angle,which is rather convenient to manufacture facility.

  4. Sub-5 nm graphene nanopore fabrication by nitrogen ion etching induced by a low-energy electron beam.

    Science.gov (United States)

    Fox, Daniel S; Maguire, Pierce; Zhou, Yangbo; Rodenburg, Cornelia; O'Neill, Arlene; Coleman, Jonathan N; Zhang, Hongzhou

    2016-05-13

    A flexible and efficient method to fabricate nanopores in graphene has been developed. A focused, low-energy (5 keV) electron beam was used to locally activate etching of a graphene surface in a low pressure (0.3 Pa) N2 environment. Nanopores with sub-5 nm diameters were fabricated. The lattice structure of the graphene was observed to recover within 20 nm of the nanopore edge. Nanopore growth rates were investigated systematically. The effects of nitrogen pressure, electron beam dwell time and beam current were characterised in order to understand the etching mechanism and enable optimisation of the etching parameters. A model was developed which describes how the diffusion of ionised nitrogen affects the nanopore growth rate. Etching of other two-dimensional materials was attempted as demonstrated with MoS2. The lack of etching observed supports our model of a chemical reaction-based mechanism. The understanding of the etching mechanism will allow more materials to be etched by selection of an appropriate ion species.

  5. The controlled fabrication of nanopores by focused electron-beam-induced etching

    Science.gov (United States)

    Yemini, M.; Hadad, B.; Liebes, Y.; Goldner, A.; Ashkenasy, N.

    2009-06-01

    The fabrication of nanometric holes within thin silicon-based membranes is of great importance for various nanotechnology applications. The preparation of such holes with accurate control over their size and shape is, thus, gaining a lot of interest. In this work we demonstrate the use of a focused electron-beam-induced etching (FEBIE) process as a promising tool for the fabrication of such nanopores in silicon nitride membranes and study the process parameters. The reduction of silicon nitride by the electron beam followed by chemical etching of the residual elemental silicon results in a linear dependence of pore diameter on electron beam exposure time, enabling accurate control of nanopore size in the range of 17-200 nm in diameter. An optimal pressure of 5.3 × 10-6 Torr for the production of smaller pores with faster process rates, as a result of mass transport effects, was found. The pore formation process is also shown to be dependent on the details of the pulsed process cycle, which control the rate of the pore extension, and its minimal and maximal size. Our results suggest that the FEBIE process may play a key role in the fabrication of nanopores for future devices both in sensing and nano-electronics applications.

  6. The controlled fabrication of nanopores by focused electron-beam-induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Yemini, M; Ashkenasy, N [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Hadad, B; Goldner, A [The Weiss Family Laboratory for Nano-Scale Systems, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Liebes, Y [Department of Biotechnology Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel)], E-mail: nurita@bgu.ac.il

    2009-06-17

    The fabrication of nanometric holes within thin silicon-based membranes is of great importance for various nanotechnology applications. The preparation of such holes with accurate control over their size and shape is, thus, gaining a lot of interest. In this work we demonstrate the use of a focused electron-beam-induced etching (FEBIE) process as a promising tool for the fabrication of such nanopores in silicon nitride membranes and study the process parameters. The reduction of silicon nitride by the electron beam followed by chemical etching of the residual elemental silicon results in a linear dependence of pore diameter on electron beam exposure time, enabling accurate control of nanopore size in the range of 17-200 nm in diameter. An optimal pressure of 5.3 x 10{sup -6} Torr for the production of smaller pores with faster process rates, as a result of mass transport effects, was found. The pore formation process is also shown to be dependent on the details of the pulsed process cycle, which control the rate of the pore extension, and its minimal and maximal size. Our results suggest that the FEBIE process may play a key role in the fabrication of nanopores for future devices both in sensing and nano-electronics applications.

  7. Intrinsic Josephson effects in submicrometre Bi2212 mesas fabricated by using focused ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Winkler, D.; Mros, N.; Tarte, E.J.; Yurgens, A.; Krasnov, V.M. [Department of Microelectronics and Nanoscience, Chalmers University of Technology and Goeteborg University, SE-412 96 Goeteborg (Sweden); Foord, D.T.; Booij, W.E.; Blamire, M.G. [IRC in Superconductivity, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom)

    1999-11-01

    We have investigated the current-voltage (I-V) characteristics of sub-{mu}m sized mesas made on the surface of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} (Bi2212) single crystals. The mesas were fabricated using focused ion beam etching. The samples showed excellent I-V characteristics and their conductance-voltage (G-V) curves were measured from above the transition temperature down to 4.2 K. New ways of making annular mesas with diameters down to 0.5 {mu}m were also investigated. (author)

  8. Nanochannel arrays etched into hexagonal boron nitride mesa-membranes by focused ion beam

    Science.gov (United States)

    Fulcrand, Remy; Linas, Sébastien; Cauwet, François; Poinsot, Blaise; Brioude, Arnaud

    2016-11-01

    Meso-membranes with highly ordered nano channel arrays have been fabricated by patterning hexagonal boron nitride (h-BN) films using a focused ion beam. The complete experimental procedure will be given in detail form the chemical vapor deposition for h-BN synthesis to its patterning and the final membrane design for nanofluidic experiments. The membranes obtained are characterized at each experimental step by electron microscopy and Raman spectroscopy. The technique is finally applied to fabricate devices in which the only passage for a fluid is a nano channel array etched into a h-BN film.

  9. Etched beam splitters in InP/InGaAsP.

    Science.gov (United States)

    Norberg, Erik J; Parker, John S; Nicholes, Steven C; Kim, Byungchae; Krishnamachari, Uppiliappan; Coldren, Larry A

    2011-01-17

    An etched beam splitter (EBS) photonic coupler based on frustrated total internal reflection (FTIR) is designed, fabricated and characterized in the InP/InGaAsP material system. The EBS offers an ultra compact footprint (8x11 μm) and a complete range of bar/cross coupling ratio designs. A novel pre-etching process is developed to achieve sufficient depth of the etched coupling gaps. Fabricated EBS couplers demonstrate insertion loss between 1 and 2.6 dB with transmission (cross-coupling) ≤ 10%. The results show excellent agreement with 3D finite-difference time-domain (FDTD) modeling. The coupling of EBS has weak wavelength dependence in the C-band, making it suitable for wavelength division multiplexing (WDM) or other wide bandwidth applications. Finally, the EBS is integrated with active semiconductor optical amplifier (SOA) and phase-modulator components; using a flattened ring resonator structure, a channelizing filter tunable in both amplitude and center frequency is demonstrated, as well as an EBS coupled ring laser.

  10. Fabrication of blazed gratings used in ultraviolet region by holographic ion beam etching based on photoresist melting

    Institute of Scientific and Technical Information of China (English)

    LI Wen-hao; Bayanheshig; QI Xiang-dong; TANG Yu-guo

    2008-01-01

    A novel technology to manufacture holographic ion beam etched diffraction gratings based on surface thermokinematics is presented.The surface roughness of photoresist gratings is solved by this technology.According to this technology,a holographic ion beam etched blazed grating of 1200 1/mm for use in the ultraviolet region is manufactured.The experimental results show that the grating has good surface quality,low stray light and high diffraction efficiency.In addition,the performance of thes gratings satisfies the operating requirements of ultraviolet spectrograph.

  11. Patterning of Spiral Structure on Optical Fiber by Focused-Ion-Beam Etching

    Science.gov (United States)

    Mekaru, Harutaka; Yano, Takayuki

    2012-06-01

    We produce patterns on minute and curved surfaces of optical fibers, and develop a processing technology for fabricating sensors, antennas, electrical circuits, and other devices on such patterned surfaces by metallization. A three-dimensional processing technology can be used to fabricate a spiral coil on the surface of cylindrical quartz materials, and then the microcoils can also be applied to capillaries of micro-fluid devices, as well as to receiver coils connected to a catheter and an endoscope of nuclear magnetic resonance imaging (MRI) systems used in imaging blood vessels. To create a spiral line pattern with a small linewidth on a full-circumference surface of an optical fiber, focused-ion-beam (FIB) etching was employed. Here, a simple rotation stage comprising a dc motor and an LR3 battery was built. However, during the development of a prototype rotation stage before finalizing a large-scale remodelling of our FIB etching system, a technical problem was encountered where a spiral line could not be processed without running into breaks and notches in the features. It turned out that the problem was caused by axis blur resulting from an eccentric spinning (or wobbling) of the axis of the fiber caused by its unrestrained free end. The problem was solved by installing a rotation guide and an axis suppression device onto the rotation stage. Using this improved rotation stage. we succeeded in the seamless patterning of 1-µm-wide features on the full-circumference surface of a 250-µm-diameter quartz optical fiber (QOF) by FIB etching.

  12. Fracture tests of etched components using a focused ion beam machine

    Science.gov (United States)

    Kuhn, Jonathan L.; Fettig, Rainer K.; Moseley, Samuel H., Jr.; Kutyrev, Alexander S.; Orloff, Jon

    2000-08-01

    Many optical MEMS device designs involve large arrays of thin (0.5 to 1 (mu) m) components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture tests configurations for 0.5 (mu) m thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe, and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

  13. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    Science.gov (United States)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  14. Dosimetry and microdosimetry using LET spectrometer based on the track-etch detector: radiotherapy Bremsstrahlung beam, onboard aircraft radiation field

    Energy Technology Data Exchange (ETDEWEB)

    Jadrnickova, I. [Dept. of Radiation Dosimetry, Nuclear Physics Institute AS CR, Na Truhlarce 39/64, 180 86 Prague 8 (Czech Republic); Dept. of Dosimetry and Application of Ionizing Radiation, Czech Technical University, Brehova 7, 115 19 Prague 1 (Czech Republic); Spurny, F. [Dept. of Radiation Dosimetry, Nuclear Physics Institute AS CR, Na Truhlarce 39/64, 180 86 Prague 8 (Czech Republic)

    2006-07-01

    The spectrometer of linear energy transfer (Let) based on the chemically etched poly-allyl-diglycol-carbonate (P.A.D.C.) track-etch detector was developed several years ago in our institute. This Let spectrometer enables determining Let of particles approximately from 10 to 700 keV/{mu}m. From the Let spectra, dose characteristics can be calculated. The contribution presents the Let spectra and other dosimetric characteristics obtained onboard a commercial aircraft during more than 6 months long exposure and in the 18 MV radiotherapy Bremsstrahlung beam. (authors)

  15. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    Energy Technology Data Exchange (ETDEWEB)

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Hinata, Toru; Washio, Masakazu [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Oshima, Akihiro; Tagawa, Seiichi [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  16. Laser marking on soda-lime glass by laser-induced backside wet etching with two-beam interference

    Science.gov (United States)

    Nakazumi, Tomoka; Sato, Tadatake; Narazaki, Aiko; Niino, Hiroyuki

    2016-09-01

    For crack-free marking of glass materials, a beam-scanning laser-induced backside wet etching (LIBWE) process by a beam spot with a fine periodic structure was examined. The fine periodic structure was produced within a beam spot by means of a Mach-Zehnder interferometer incorporated to the optical setup for the beam-scanning LIBWE. A fine structure with a period of 9 µm was observed within the microstructures with a diameter of ca. 40 µm fabricated by a laser shot under double-beam irradiation, and they could be homogeneously fabricated within an area of 800  ×  800 µm. The area filled with the microstructures, including fine periodic structures, could be observed in high contrast under a diffuse, on-axis illumination that was used in commercial QR code readers.

  17. Microdosimetric investigations in a proton therapy beam with sequentially etched Cr-39 track detectors

    Energy Technology Data Exchange (ETDEWEB)

    Luszik-Bhadra, M.; Wiegel, B. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); d`Errico, F. [Pisa Univ. (Italy). Dipt. di Costruzioni Meccaniche e Nucleari]|[Istituto Nazionale di Fisica Nucleare, Pisa (Italy); Lusini, L. [Pisa Univ. (Italy). Dipt. di Costruzioni Meccaniche e Nucleari

    1996-12-31

    The applicability of CR-39 nuclear track detectors to the field of microdosimetry was experimentally investigated through a series of tests with monoenergetic charged particle fields. A special etching technique (intermittent etching and cleaning etch steps) was devised and employed to determine LET values along individual tracks on irradiated detector plates. The range of measurable LET values was inferred from the analysis of the etched track diameters created by monoenergetic protons, alpha particles and fission fragments. Based on these calibrations, measurements of track densities and LET distributions were performed at different depths in a CR-39 stack irradiated with 62 MeV protons. (author).

  18. Three-dimensional structuring of sapphire by sequential He sup + ion-beam implantation and wet chemical etching

    CERN Document Server

    Crunteanu, A; Hoffmann, P; Pollnau, M; Buchal, C; Petraru, A; Eason, R W; Shepherd, D P

    2003-01-01

    We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 mu m and subsequent selective wet chemical etching of the damaged regions by hot H sub 3 PO sub 4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1 x 10 sup 1 sup 6 to 5 x 10 sup 1 sup 7 He sup + /cm sup 2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. (orig.)

  19. Effect of helium ion beam treatment on the etching rate of silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Petrov, Yu.V., E-mail: y.petrov@spbu.ru; Sharov, T.V.; Baraban, A.P.; Vyvenko, O.F.

    2015-04-15

    We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. 30 keV helium ions were implanted into a 500-nm-thick silicon nitride film on silicon. Ion fluences from 10{sup 15} to 10{sup 17} cm{sup −2} were used. Etching was performed in a hydrofluoric acid solution. All samples were investigated with a scanning electron microscope and atomic force microscope. It was found that helium ion implantation can increase the etching rate by a factor of three. This results in the formation of a well in the implanted area after etching. The maximum depth of the well is about 180 nm and is limited by the penetration depth of 30 keV helium ions. Two possible reasons for enhanced etching are suggested: enhancement by ion-induced defects and electrostatic interaction of ions of the etchant with ion-induced space charge of silicon nitride. The recombination of ion-induced defects is also discussed.

  20. Research on the Adsorption of Methylene Blue with Rice Husk Ash Aided by Ion Beam Etching Technique

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    [Objective] The aim was to study the mechanism of the removal effect of methylene blue(MB) by rice husk ash(RHA).[Method] The effects of contact time and pH on the adsorption of MB by rice husk ash were investigated,and the mechanism was discussed.[Result] RHA exhibited a remarkable ability on the adsorption of MB.The process of adsorption reached the equilibrium after 30 min,at about pH 9.The adsorption effect was explored with the aid of ion beam etching technique,which displayed that there were two main ...

  1. Reactive ion beam etching studies of tungsten with CF sub 4 /argon mixtures using ion scattering spectroscopy and SIMS

    Energy Technology Data Exchange (ETDEWEB)

    Cox, T.I.; Deshmukh, V.G.I. (Royal Signals and Radar Establishment, Malvern (UK)); Armour, D.G. (Salford Univ. (UK). Dept. of Electrical Engineering)

    1989-01-01

    Tungsten foil was bombarded at 550 eV with ion beams generated from CF{sub 4}/Ar gas mixtures. The chemical compositions of the bombarded surface and etch products were determined using Ion Scattering Spectroscopy and Secondary Ion Mass Spectrometry respectively. As the ratio CF{sub 4}/Ar was increased, the tungsten surface became covered with fluorine atoms. The products observed were positive ions of W, WF, and WF{sub 2}, with WF{sub 2} being only formed above a threshold concentration of CF{sub 4} in the gas mixture. (author).

  2. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  3. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

    Science.gov (United States)

    Alias, Mohd S; Yang, Yang; Ng, Tien K; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I; Priante, Davide; Bakr, Osman M; Ooi, Boon S

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  4. Poly (dimethyl siloxane) micro/nanostructure replication using proton beam written masters

    Science.gov (United States)

    Shao, P. G.; van Kan, J. A.; Ansari, K.; Bettiol, A. A.; Watt, F.

    2007-07-01

    Proton beam writing (PBW) has been proven to be a powerful tool for fabricating micro and nanostructures with high aspect ratio. However, being a direct-write technique, and therefore, a serial process, PBW is not economic for low cost multiple component production. Techniques for replicating PBW structures with low cost are necessary for applications in for example nanofluidics, tissue engineering and optical devices. We have investigated casting poly (dimethyl siloxane) (PDMS Sylgard 184, Dow Corning Corp.) with PBW structures as masters. First, a 2 MeV focused H2+ beam was written into a 2 μm thick PMMA layer spin coated onto 50 μm thick Kapton film substrate. Next, these PMMA structures, with details down to 700 nm, were replicated with PDMS. Without any release coating treatment, PDMS circular pillars, 700 nm in diameter were successfully replicated. We also fabricated a nickel master with nanofeature dimensions and 2 μm depth using proton beam writing and sulfamate electroplating. The nickel master was used to successfully replicate a prototype DNA separation chip using PDMS.

  5. Imaging the interphase of carbon fiber composites using transmission electron microscopy:Preparations by focused ion beam, ion beam etching, and ultramicrotomy

    Institute of Scientific and Technical Information of China (English)

    Wu Qing; Li Min; Gu Yizhuo; Wang Shaokai; Zhang Zuoguang

    2015-01-01

    Three sample preparation techniques, focused ion beam (FIB), ion beam (IB) etching, and ultramicrotomy (UM) were used in comparison to analyze the interphase of carbon fiber/epoxy composites using transmission electron microscopy. An intact interphase with a relatively uniform thickness was obtained by FIB, and detailed chemical analysis of the interphase was investigated by electron energy loss spectroscopy. It shows that the interphase region is 200 nm wide with an increasing oxygen-to-carbon ratio from 10% to 19% and an almost constant nitrogen-to-carbon ratio of about 3%. However, gallium implantation of FIB tends to hinder fine structure analysis of the interphase. For IB etching, the interphase region is observed with transition morphology from amorphous resin to nano-crystalline carbon fiber, but the uneven sample thickness brings difficulty for quantitative chemical analysis. Moreover, UM tends to cause damage and/or deformation on the interphase. These results are meaningful for in-depth understanding on the interphase characteristic of carbon fiber composites.

  6. Replication of a holographic ion-etched spherical blazed grating for use at extreme-ultraviolet wavelengths: efficiency

    Science.gov (United States)

    Kowalski, Michael P.; Barbee, Troy W.; Hunter, William R.

    2006-01-01

    Using synchrotron radiation, we have measured the efficiency at an angle of incidence of 10° of a holographic ion-etched spherical blazed grating and three of its fourth-generation replicas. The measured efficiency profile of replicas 1 and 3 prior to multilayer coating oscillated from thin-film interference produced by the replicas' Al/Al2O3⁢/SiO2 structure. A Mo2C/Si multilayer coating was applied to the master grating and replicas 1 and 2. After coating, the maximum grating efficiency occurred in the -2nd order and the maximum values were 12.4% at 143.8 Å for the master and 11.6% at 145.2 Å for replicas 1 and 2. On the basis of measurements obtained after coating, the derived groove efficiency was 22.2% for the master, 19.4% for replica 1, and 19.3% for replica 2. The groove efficiency of the uncoated replica 3 was 24.3% at 142.5 Å. We find that the replicas are reasonably faithful copies of the ion-etched master, and models based on measured atomic force microscope groove profiles are in general agreement with measured results. However, subtle issues remain regarding the widths of the peak order profile and the location of its maximum wavelength.

  7. Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xuanyu; Huang, Chi-Hsien; Tsukamoto, Rikako; Samukawa, Seiji [Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Mortemousque, Pierre-Andre; Itoh, Kohei M; Ohno, Yuzo, E-mail: samukawa@ifs.tohoku.ac.jp [Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda, Tokyo 102-0075 (Japan)

    2011-09-07

    The first damage-free top-down fabrication processes for a two-dimensional array of 7 nm GaAs nanodiscs was developed by using ferritin (a protein which includes a 7 nm diameter iron core) bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, to remove the ferritin protein shell without thermal damage to the GaAs, we firstly developed an oxygen-radical treatment method with a low temperature of 280 deg. C. Then, the neutral beam etched the defect-free nanodisc structure of the GaAs using the iron core as an etching mask. As a result, a two-dimensional array of GaAs quantum dots with a diameter of {approx} 7 nm, a height of {approx} 10 nm, a high taper angle of 88 deg. and a quantum dot density of more than 7 x 10{sup 11} cm{sup -2} was successfully fabricated without causing any damage to the GaAs.

  8. Enhancement of etch rate for preparation of nano-sized ion-track membranes of poly(vinylidene fluoride): Effect of pretreatment and high-LET beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Rohani, Rosiah [Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Department of Chemical and Process Engineering, Faculty of Engineering, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Yamaki, Tetsuya [Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)], E-mail: yamaki.tetsuya@jaea.go.jp; Koshikawa, Hiroshi; Takahashi, Shuichi; Hasegawa, Shin; Asano, Masaharu; Maekawa, Yasunari [Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Voss, Kay-Obbe; Trautmann, Christina; Neumann, Reinhard [Materials Research Department, Gesellschaft fur Schwerionenforschung mbH (GSI), Planckstrasse 1, D-64291 Darmstadt (Germany)

    2009-02-15

    We investigated how pretreatment and high-LET beam irradiation affected the ion-track dissolution rate in poly(vinylidene fluoride) (PVDF) films by SEM observations and conductometric analysis in order to develop the preparation methodology of nano-sized ion-track membranes. PVDF thin films irradiated with four types of ion beams were exposed to a 9 mol/dm{sup 3} KOH aqueous solution after their storage in air at 120 deg. C. This heating treatment was found to enhance the etch rate in the latent track, both in the inner core and outer halo regions, without changing that in the bulk, probably due to the formation of parasitic oxidation products facilitating the introduction of the etching agent to improve the etchability. Additionally, the irradiation of heavier higher-LET ions, causing each track to more activated sites (like radicals), was preferable for achieving effective etching.

  9. High aspect ratio micro tool manufacturing for polymer replication using mu EDM of silicon, selective etching and electroforming

    DEFF Research Database (Denmark)

    Tosello, Guido; Bissacco, Giuliano; Tang, Peter Torben

    2008-01-01

    Mass fabrication of polymer micro components with high aspect ratio micro-structures requires high performance micro tools allowing the use of low cost replication processes such as micro injection moulding. In this regard an innovative process chain, based on a combination of micro electrical di...

  10. Atomic layer etching of silicon dioxide using alternating C4F8 and energetic Ar+ plasma beams

    Science.gov (United States)

    Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M.; Economou, Demetre J.

    2017-06-01

    Atomic layer etching (ALE) of SiO2 was studied by alternating exposure of a 5 nm-thick SiO2 film on Si substrate to (1) a plasma beam emanating from a c-C4F8 inductively coupled plasma (ICP), to grow a fluorocarbon (FC) film composed mainly of CF2, and (2) an energetic (130 eV) Ar+ ion beam extracted from a separate Ar ICP. In situ x-ray photoelectron spectroscopy was used to analyze the chemical composition of the near-surface region, and to quantify the thickness of the FC and SiO2 films. A very thin (3-6 Å), near self-limiting thickness CF2-rich FC film was found to deposit on the SiO2 surface with exposure to continuous or pulsed power C4F8 plasma beams, under conditions that generated a large relative flux of CF2. Following this, a FC film of similar composition grew at ~10 times slower rate. Exposure of the thin film to the Ar+ beam led to removal of 1.9 Å SiO2. An estimated yield of 1.3 SiO2 molecules-per-Ar+ was found for a single ALE step. The rate of 1.9 Å/cycle persisted over multiple ALE cycles, but a carbon-rich residual film did build up. This film can be removed by a brief exposure to an O2-containing plasma beam.

  11. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams

    Directory of Open Access Journals (Sweden)

    Xiaohui Du

    2016-01-01

    Full Text Available A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

  12. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams.

    Science.gov (United States)

    Du, Xiaohui; Liu, Yifang; Li, Anlin; Zhou, Zhou; Sun, Daoheng; Wang, Lingyun

    2016-01-26

    A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE) simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale) in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

  13. Microscopic evaluation of the absolute fluence distribution of a large-area uniform ion beam using the track-etching technique

    Energy Technology Data Exchange (ETDEWEB)

    Kitamura, Akane, E-mail: ogawa.akane@jaea.go.jp [Department of Advanced Radiation Technology, Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Yamaki, Tetsuya [High Performance Polymer Group, Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Yuri, Yosuke [Department of Advanced Radiation Technology, Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Sawada, Shin-ichi [High Performance Polymer Group, Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Yuyama, Takahiro [Department of Advanced Radiation Technology, Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan)

    2013-11-01

    The absolute fluence distribution of a large-area uniform beam was investigated microscopically via track etching of an Ar-irradiated polyethylene terephthalate (PET) film. The irradiated sample was divided equally into 64 pieces, for each of which the track-pore densities were counted over a 12 × 17 μm{sup 2} microscopic area near the center. For comparison, the relative intensity distribution was obtained by measuring the optical density of a similarly irradiated Gafchromic film at a resolution of 500 × 500 μm{sup 2} and then taking the measured value at the center of each of the 64 areas. The relative standard deviations of the distributions were in good agreement despite the difference in the observed resolution area and the small sample number. It was, therefore, confirmed that track etching is a reliable technique for evaluating absolute fluence and that a uniform intensity distribution of the beam was microscopically realized.

  14. Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process

    Science.gov (United States)

    Jeong, Junho; Endoh, Tetsuo

    2017-04-01

    The electric short fail trend of the perpendicular magnetic tunnel junctions (p-MTJs) caused by the ion beam etching (IBE) process is studied at various ion beam angles and cell-to-cell space widths. The number of electric short fails increases markedly at an ion beam angle greater than 35° and a cell-to-cell space width less than 30 nm at the assumed MTJ height including a hard mask (HM) of 20 nm. In order to recover these electric short fails, we propose the selective oxidation process called the oxygen showering post-treatment (OSP). By the OSP process, the number of electric short fails in sub-30-nm-spaced MTJ arrays is reduced from 25 to 0.8%, and the magnetoresistance (MR) is increased from 99 to 120%. By this result, we can verify that the damaged layer is recovered successfully by the OSP, and that the OSP can be a universal post-treatment process even beyond the 20 nm design rule for use in both reactive ion etching and IBE schemes.

  15. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    Production of large-area flat panel displays (FPDs) involves several pattern transfer and device fabrication steps that can be performed with dry etching technologies. Even though the dry etching using capacitively coupled plasma is generally used to maintain high etch uniformity, due to the need...... for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...... generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  16. Sharp high-aspect-ratio AFM tips fabricated by a combination of deep reactive ion etching and focused ion beam techniques.

    Science.gov (United States)

    Caballero, David; Villanueva, Guillermo; Plaza, Jose Antonio; Mills, Christopher A; Samitier, Josep; Errachid, Abdelhamid

    2010-01-01

    The shape and dimensions of an atomic force microscope tip are crucial factors to obtain high resolution images at the nanoscale. When measuring samples with narrow trenches, inclined sidewalls near 90 degrees or nanoscaled structures, standard silicon atomic force microscopy (AFM) tips do not provide satisfactory results. We have combined deep reactive ion etching (DRIE) and focused ion beam (FIB) lithography techniques in order to produce probes with sharp rocket-shaped silicon AFM tips for high resolution imaging. The cantilevers were shaped and the bulk micromachining was performed using the same DRIE equipment. To improve the tip aspect ratio we used FIB nanolithography technique. The tips were tested on narrow silicon trenches and over biological samples showing a better resolution when compared with standard AFM tips, which enables nanocharacterization and nanometrology of high-aspect-ratio structures and nanoscaled biological elements to be completed, and provides an alternative to commercial high aspect ratio AFM tips.

  17. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    Dry etching is a collective term used for controlled material removal by means of plasma generated ions. Dry etching includes several techniques, with reactive ion etching as one of the most used of its many derivatives. In this work inductively coupled plasma reactive ion etching has been applied...... beam etching in a boron trichloride plasma. The etch rates of sapphire in such a plasma can be up to a hundred times faster than rates in ion beam etching. The anisotropy of the etch can be controlled by changing the plasma conditions and fabrication of sloped sidewalls can be achieved. Reactive ion...... etching of polymers can be used for several purposes, such as polymer removal, surface properties alternation, or polymer structuring. For material removal any polymer can be etched in an oxygen plasma, including all the polymers used in this project, which include, SU-8, TOPAS®, PLLA, PCL, and PMMA...

  18. Ion-beam enhanced etching for the 3D structuration of lithium niobate; Ionenstrahlverstaerktes Aetzen fuer die 3D-Strukturierung von Lithiumniobat

    Energy Technology Data Exchange (ETDEWEB)

    Gischkat, Thomas

    2010-01-12

    The present thesis deals with the usage of the ion-beam enhanced etching (IBEE) for the 3D structuration of lithium niobate (LiNbO{sub 3}).Hereby the approach of the enhancement of the wet-chemical etching rate due to the irradiation with energetic ions is pursued. This method is very success promising for the realization of micro- and nanostructures with perpendicular structural walls as well as small roughnesses. The aim of this thesis consisted therein to form the foundations for the realization of three-dimensional micro- and nanostructures (for instance: Layer systems and photonic crystals) in LiNbO{sub 3} with high optical quality and to demonstrate on selected examples. Conditions for the success of the IBEE structuration technique is first of all the understanding of the defect formation under ion irradiation as well as the radiation-induced structure changes in the crystal and the change of the chemical resistance connected with this. For this the defect formation was studied in dependence on th ion mass, the ion energy, and the irradiation temperature. Thermally induced influences and effects on the radiation damage, as they can occur in intermediate steps in the complex processing, must be known and were studied by means of subsequent temperature treatment. The results from the defect studies were subsequently applied for the fabrication of micro- and nanostructures in LiNbO{sub 3}. Shown is the realization of lateral structure with nearly perpendicular structure walls as well as the realization of thin membranes and slits. The subsequent combination of lateral structuration with the fabrication of thin membranes and slits allowed the three-dimensional structuration of LiNbO{sub 3}. This is exemplarily shown for a microresonator and for a 2D photonic crystal with below lying air slit. [German] Die vorliegende Arbeit beschaeftigt sich mit der Ausnutzung des ionenstrahlverstaerkten Aetzens (IBEE: Ion Beam Enhanced Etching) fuer die 3D-Strukturierung von

  19. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching

    Science.gov (United States)

    Zhang, Xiaoyan; Tang, Dan; Huang, Kangrong; Hu, Die; Zhang, Fengyuan; Gao, Xingsen; Lu, Xubing; Zhou, Guofu; Zhang, Zhang; Liu, Junming

    2016-04-01

    In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 1010 cm-2) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

  20. Low-temperature and damage-free transition metal and magnetic material etching using a new metallic complex reaction

    Science.gov (United States)

    Nozawa, Toshihisa; Miyama, Ryo; Kubota, Shinji; Moyama, Kazuki; Kubota, Tomihiro; Samukawa, Seiji

    2015-03-01

    A neutral beam etching process has been developed that achieves damage- free (chemically and physically) etching. Recently, it was found that transition metals could be etched using neutral beam etching through metallic complex reactions. In this process, a neutral beam is extracted from a plasma generation region into a reaction chamber. Complex reactant gases are injected into a reaction chamber which is screened from the plasma during neutral beam etching. In this paper, etching of Pt and CoFeB, candidate materials for MRAM structures by a neutral beam system is described. It was found that etch rate enhancement of Pt/CoFeB surfaces resulted from their exposure to a neutral beam from Ar/O2 plasma with simultaneous injection of EtOH /acetic acid into the reaction chamber. Etching damage was also evaluated and no magnetic hysteresis degradation has been observed. Neutral beam etching technology has the capability to make breakthrough for fabricating MRAM device.

  1. 纳米梁的金硅原电池腐蚀和无损释放技术研究%Study on the galvanic cell etching for Si-based nano beam with Au pad and release method without structure damage

    Institute of Scientific and Technical Information of China (English)

    戴斌; 杨恒; 陆松涛

    2011-01-01

    Hydrofluoric acid(HF) was widely used in wet etching operation to release Si-based micronano beams. However,corrosion of silicon may occur when silicon beam is electrically connected to Au Pad, which seriously damages the feature and performance of nano beams. According to the measurements of polarization curves of Au/ Si in HF, galvanic etching was suggested to play a major role in the etching of Si. Galvanic etching can be alleviated by changing the Au/Si area ratio and HF solution content based on the experiments. In the end, HF vapor phase etching devices was designed to totally eliminate the galvanic cell etching and 120 nm thickness two double-clamped nano beams was successfully fabricated by this method without structure damage.%采用金电极的硅纳米梁在通过HF湿法腐蚀SiO2牺牲层释放结构的时候会发生硅纳米梁被腐蚀现象,消除此效应对于纳米尺度梁制造非常重要:通过电化学工作站测量不同条件下金/硅在HF中的极化曲线和腐蚀电流,从定性和定量研究此腐蚀的原理和影响因素:金硅在HF中形成的原电池效应是此腐蚀的主要原因;改变金硅面积比和改变HF构成可以减缓此腐蚀.设计了一种简单可控的HF蒸气腐蚀装置彻底消除原电池腐蚀效应的影响,并实现了120 nm厚双端固支纳米梁的无损释放.

  2. Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers

    Science.gov (United States)

    Farrell, S.; Rao, Mulpuri V.; Brill, G.; Chen, Y.; Wijewarnasuriya, P.; Dhar, N.; Benson, J. D.; Harris, K.

    2013-11-01

    The morphology and classification of etch pits in molecular beam epitaxy-grown (211) HgCdTe/CdTe/Si layers were investigated using the Schaake and Benson etch pit density (EPD) etches. The two EPD etches were compared and shown to have a 1:1 correlation in the etch pits that were produced. Close examination of the shape of the etch pits via scanning electron microscopy shows that several distinguishable classifications of etch pits are revealed using both etches. Samples subjected to thermal cycle annealing (TCA) treatment show a nonuniform reduction in etch pit populations according to the classification defined in this study. In particular, a class of etch pits called "fish shaped" are completely absent after TCA and can account for up to one-third of the total reduction in EPD.

  3. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik;

    2014-01-01

    in a liquid reacts with material from the substrate is the ability to fine‐tune the etch process. In wet processing the removal of material generally occurs indiscriminately of direction in the substrate ‐ hence in all directions. This puts a strong limitation on what may be achieved in terms of designs...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  4. Agile dry etching of compound semiconductors for science-based manufacturing using in-situ process control

    Energy Technology Data Exchange (ETDEWEB)

    ASHBY,CAROL I.; VAWTER,GREGORY A.; BREILAND,WILLIAM G.; BRUSKAS,LARRY A.; WOODWORTH,JOSEPH R.; HEBNER,GREGORY A.

    2000-02-01

    In-situ optical diagnostics and ion beam diagnostics for plasma-etch and reactive-ion-beam etch (RIBE) tools have been developed and implemented on etch tools in the Compound Semiconductor Research Laboratory (CSRL). The optical diagnostics provide real-time end-point detection during plasma etching of complex thin-film layered structures that require precision etching to stop on a particular layer in the structure. The Monoetch real-time display and analysis program developed with this LDRD displays raw and filtered reflectance signals that enable an etch system operator to stop an etch at the desired depth within the desired layer. The ion beam diagnostics developed with this LDRD will permit routine analysis of critical ion-beam profile characteristics that determine etch uniformity and reproducibility on the RIBE tool.

  5. Optimization of nanopores obtained by chemical etching on swift-ion irradiated lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Crespillo, M.L.; Otto, M.; Munoz-Martin, A. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Olivares, J. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Instituto de Optica, CSIC, C/Serrano 121, E-28006 Madrid (Spain)], E-mail: j.olivares@io.cfmac.csic.es; Agullo-Lopez, F. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de Materiales, Universidad Autonoma de Madrid (UAM) Cantoblanco, 28049 Madrid (Spain); Seibt, M. [IV. Physikalisches Institut, Universitaet Goettingen, Institut fuer Halbleiterphysik, Tammannstr. 1, D-37077 Goettingen (Germany); Toulemonde, M. [Centre Interdisciplinaire de Recherche Ions-Lasers, UMR 11 CEA-CNRS, 14040 Caen Cedex (France); Trautmann, C. [Gesellschaft fuer Schwerionenforschung (GSI), Materialforschung, Planckstrasse 1, 64291 Darmstadt (Germany)

    2009-03-15

    The morphology of the nanopores obtained by chemical etching on ion-beam irradiated LiNbO{sub 3} has been investigated for a variety of ions (F, Br, Kr, Cu, Pb), energies (up to 2300 MeV), and stopping powers (up to 35 keV/nm) in the electronic energy loss regime. The role of etching time and etching agent on the pore morphology, diameter, depth, and shape has also been studied. The transversal and depth profiles of the pore have been found to be quite sensitive to both irradiation and etching parameters. Moreover, two etching regimes with different morphologies and etching rates have been identified.

  6. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  7. Diffraction efficiency of a replicated, flight-like off-plane reflection grating baselined for future X-ray missions

    Science.gov (United States)

    Miles, Drew; McEntaffer, Randall; McCoy, Jake; Tutt, James; DeRoo, Casey

    2017-01-01

    Future soft X-ray spectroscopy missions have science requirements that demand higher instrument throughput and higher resolution than currently available technology. A key element in such spectrometers are dispersive elements such as diffraction gratings. Our group at Penn State University develops and fabricates off-plane reflection gratings in an effort to achieve the level of performance required by future missions. We present here efficiency measurements made in the 0.3 - 1.5 keV energy band at the Advanced Light Source (ALS) synchrotron at Lawrence Berkley National Laboratory for one such grating, which was replicated using UV-nanoimprint techniques from a grating master fabricated using electron-beam lithography, plasma etching, and potassium hydroxide etching. These results represent the first successful demonstration of off-plane grating replicas produced via these fabrication techniques and provide baseline efficiency measurements for flight-like replicated gratings.

  8. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes with chemically assisted ion beam etched facets

    Science.gov (United States)

    Becerra, Daniel L.; Kuritzky, Leah Y.; Nedy, Joseph; Saud Abbas, Arwa; Pourhashemi, Arash; Farrell, Robert M.; Cohen, Daniel A.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

    2016-02-01

    Continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

  9. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  10. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  11. Etching with atomic precision by using low electron temperature plasma

    Science.gov (United States)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Monroy, G. A.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2017-07-01

    There has been a steady increase in sub-nm precision requirement for many critical plasma etching processes in the semiconductor industry. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in conventional radio-frequency (RF) plasma processing systems, even during layer-by-layer or ‘atomic layer’ etch. To meet these increasingly stringent requirements, it is necessary to have an accurate control over ion energy and ion/radical composition during plasma processing. In this work, a new plasma etch system designed to facilitate atomic precision plasma processing is presented. An electron sheet beam parallel to the substrate surface is used to produce a plasma in this system. This plasma has a significantly lower electron temperature T e ~ 0.3 eV and ion energy E i  plasmas. Electron beam plasmas also have a higher ion-to-radical ratio compared to RF plasmas, so this plasma etch system employs an independent radical source for accurate control over relative ion and radical concentrations. A low frequency RF bias capability that allows control of ion energy in the 2-50 eV range is another important component of this plasma etch system. The results of etching of a variety of materials and structures in this low-electron temperature plasma system are presented in this study: (1) layer-by-layer etching of p-Si at E i ~ 25-50 eV using electrical and gas cycling is demonstrated; (2) continuous etching of epi-grown µ-Si in Cl2-based plasmas is performed, showing that surface damage can be minimized by keeping E i  etching at low E i.

  12. Extreme ultraviolet lithography mask etch study and overview

    Science.gov (United States)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  13. Fundamental Technical Elements of Freeze-fracture/Freeze-etch in Biological Electron Microscopy

    Science.gov (United States)

    Freeze-fracture/freeze-etch describes a process whereby specimens, typically biological or nanomaterial in nature, are frozen, fractured, and replicated to generate a carbon/platinum "cast" intended for examination by transmission electron microscopy. Specimens are subjected to u...

  14. Fundamental Technical Elements of Freeze-fracture/Freeze-etch in Biological Electron Microscopy

    Science.gov (United States)

    Freeze-fracture/freeze-etch describes a process whereby specimens, typically biological or nanomaterial in nature, are frozen, fractured, and replicated to generate a carbon/platinum "cast" intended for examination by transmission electron microscopy. Specimens are subjected to u...

  15. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  16. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    DEFF Research Database (Denmark)

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber. It was ......The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber....... It was found that, for a constant load of silicon exposed to the plasma, the etch rate variation can be controlled through the applied rf power, the chamber pressure, and the gas mixture. It was also found that the etch rate uniformity varies with the load of silicon exposed to the plasma. The result...... is a balance between the flux of neutral radicals and the flux of energetic ions to the surface. This balance is due to the RIE etch mechanism, which involves synergism between the two fluxes. (C) 1997 American Vacuum Society....

  17. Profile etching for prefiguring X-ray mirrors.

    Science.gov (United States)

    Liu, Chian; Qian, Jun; Assoufid, Lahsen

    2015-03-01

    A method to pre-shape mirror substrates through etching with a broad-beam ion source and a contoured mask is presented. A 100 mm-long elliptical cylinder substrate was obtained from a super-polished flat Si substrate with a 48 nm root-mean-square (r.m.s.) figure error and a 1.5 Å r.m.s. roughness after one profile-etching process at a beam voltage of 600 V without iteration. A follow-up profile coating can be used to achieve a final mirror. Profile etching and profile coating combined provide an economic way to make X-ray optics, such as nested Kirkpatrick-Baez mirrors.

  18. Database Replication

    CERN Document Server

    Kemme, Bettina

    2010-01-01

    Database replication is widely used for fault-tolerance, scalability and performance. The failure of one database replica does not stop the system from working as available replicas can take over the tasks of the failed replica. Scalability can be achieved by distributing the load across all replicas, and adding new replicas should the load increase. Finally, database replication can provide fast local access, even if clients are geographically distributed clients, if data copies are located close to clients. Despite its advantages, replication is not a straightforward technique to apply, and

  19. Studies of CR-39 etch rates

    CERN Document Server

    Rana, M A

    2002-01-01

    A series of chemical etching experiments have been carried out on CR-39 detectors irradiated with fission fragments of sup 2 sup 5 sup 2 Cf to study the bulk and track etching characteristics. Experimental data has been analyzed to find out important track etch parameters. Both bulk and track etch rates are found to follow the Arrhenius equation which gives the variation of etch rate with temperature for a specific set of etching conditions. Activation energies for bulk and track etching have been determined by fitting Arrhenius equation to the experimental data. Other track etch parameters, e.g. critical angle of etching and track registration efficiency have also been determined using experimental data. Track etch parameters depend on properties of incident ion and etching conditions. Results describing the dependence of track etch parameters on etching conditions have been presented. These results are useful in the interpretation of track data.

  20. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.

    Science.gov (United States)

    Li, Yang; Wang, Cong; Yao, Zhao; Kim, Hong-Ki; Kim, Nam-Young

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology.

  1. Fast patterning and dry-etch of SiNχ for high resolution nanoimprint templates

    Institute of Scientific and Technical Information of China (English)

    Shu Zhen; Wan Jing; Lu Bingrui; Xie Shenqi; Chen Yifang; Qu Xinping; Liu Ran

    2009-01-01

    We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography (EBL) and a dry etch technique on a SiNx substrate, intended for large area manufacturing. To this end,the highly sensitive chemically amplified resist (CAR), NEB-22, with negative tone was used. The EBL process first defines the template pattern in NEB-22, which is then directly used as an etching mask in the subsequent reactive ion etching (RIE) on the SiNx to form the desired templates. The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied, indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask. Nevertheless, our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.

  2. Cryogenic Etching of Silicon: An Alternative Method For Fabrication of Vertical Microcantilever Master Molds

    Science.gov (United States)

    Addae-Mensah, Kweku A.; Retterer, Scott; Opalenik, Susan R.; Thomas, Darrell; Lavrik, Nickolay V.; Wikswo, John P.

    2013-01-01

    This paper examines the use of deep reactive ion etching (DRIE) of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of a SiOxFy polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the O2 flow rate and the capacitively coupled plasma (CCP) power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using e-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 µm, and 2 µm. PMID:24223478

  3. Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

    Science.gov (United States)

    Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko

    2017-02-01

    We investigated the impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and the device performance of Ge fin field-effect transistors (Ge FinFETs). UV light irradiation during etching affected the shape of the Ge fin and the surface roughness of the Ge fin sidewall. A vertical and smooth Ge fin could be fabricated by neutral beam etching without UV light irradiation. The performances of Ge FinFETs fabricated by neutral beam etching were markedly improved as compared to those of Ge FinFETs fabricated by inductively coupled plasma etching, in which the UV light has an impact.

  4. Laser etching of transparent materials at a backside surface adsorbed layer

    Energy Technology Data Exchange (ETDEWEB)

    Boehme, R. [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Hirsch, D. [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Zimmer, K. [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany)]. E-mail: klaus.zimmer@iom-leipzig.de

    2006-04-30

    The laser etching using a surface adsorbed layer (LESAL) is a new method for precise etching of transparent materials with pulsed UV-laser beams. The influence of the processing parameters to the etch rate and the surface roughness for etching of fused silica, quartz, sapphire, and magnesium fluoride (MgF{sub 2}) is investigated. Low etch rates of 1 nm/pulse and low roughness of about 1 nm rms were found for fused silica and quartz. This is an indication that different structural modifications of the material do not affect the etching significantly as long as the physical properties are not changed. MgF{sub 2} and sapphire feature a principal different etch behavior with a higher etch rate and a higher roughness. Both incubation effects as well as the temperature dependence of the etch rate can be interpreted by the formation of a modified near surface region due to the laser irradiation. At repetition rates up to 100 Hz, no changes of the etch rate have been observed at moderate laser fluences.

  5. Femtosecond laser etching of dental enamel for bracket bonding.

    Science.gov (United States)

    Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

  6. Postoperative sensitivity of self etch versus total etch adhesive.

    Science.gov (United States)

    Yousaf, Ajmal; Aman, Nadia; Manzoor, Manzoor Ahmed; Shah, Jawad Ali; Dilrasheed

    2014-06-01

    To compare postoperative sensitivity following composite restoration placed in supra gingival class-V cavities using self etch adhesive and total etch adhesive. A randomized clinical trial. Operative Dentistry Department of Armed Forces Institute of Dentistry, Rawalpindi, from July to December 2009. A total of 70 patients having class-V supra gingival carious lesions were divided into two groups. Classes-V cavities not exceeding 3 mm were prepared. One treatment group was treated with self etch adhesive (adhe SE one Ivoclar) and the control group was treated with total-etch adhesive (Eco-Etch Ivoclar) after acid etching with 37% phosphoric acid. Light cured composite (Te-Econom Ivoclar) restoration was placed for both groups and evaluated for postoperative sensitivity immediately after restoration, after 24 hours and after one week. Data was recorded on visual analogue scale. Comparison of sensitivity between the two treatment groups on application cold stimulus after 24 hours of restoration showed significant difference; however, no statistically significant difference was observed at baseline, immediately after restoration and at 1 week follow-up with cold stimulus or compressed air application. Less postoperative sensitivity was observed at postoperative 24 hours assessment in restoration placed using SE adhesives compared to TE adhesives. Thus, the use of SE adhesives may be helpful in reducing postoperative sensitivity during 24 hours after restoration placement.

  7. Silicon Deep Etching Techniques for MEMS Devices

    Institute of Scientific and Technical Information of China (English)

    WU Ying; OU Yi-hong; JIANG Yong-qing; LI Bin

    2003-01-01

    Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. These two factors are studied in this paper. The experimental results show that the higher selectivity can be gotten when F- gas is used as etching gas and Al is introduced as mask layer. The lateral etching problems can be solved by adjusting the etching condition, such as increasing the RF power, changing the gas composition and flow volume of etching machine.

  8. Laser etching of austenitic stainless steels for micro-structural evaluation

    Science.gov (United States)

    Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

    2015-06-01

    Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

  9. Photonic Crystal Fabrication in Lithium Nobate via Pattern Transfer Through Wet and Dry Etched Chromium Mask

    Science.gov (United States)

    2012-10-02

    generation system (NPGS, JC Nabity Lithography Systems) e-beam patterning software. Parame- ters (accelerating voltage, current, etc.) for each machine were...sample contained several patterns of varying size, each of which showed a different rate of expansion, or etching speed —larger features were etched...Optics, Eindhoven , The Netherlands, 11-13 June, 2008 ( Eindhoven Uni- versity of Technology, Department of Electrical Engineering, Division of

  10. Non-Lithographic Silicon Micromachining Using Inkjet and Chemical Etching

    Directory of Open Access Journals (Sweden)

    Sasha Hoshian

    2016-12-01

    Full Text Available We introduce a non-lithographical and vacuum-free method to pattern silicon. The method combines inkjet printing and metal assisted chemical etching (MaCE; we call this method “INKMAC”. A commercial silver ink is printed on top of a silicon surface to create the catalytic patterns for MaCE. The MaCE process leaves behind a set of silicon nanowires in the shape of the inkjet printed micrometer scale pattern. We further show how a potassium hydroxide (KOH wet etching process can be used to rapidly etch away the nanowires, producing fully opened cavities and channels in the shape of the original printed pattern. We show how the printed lines (width 50–100 µm can be etched into functional silicon microfluidic channels with different depths (10–40 µm with aspect ratios close to one. We also used individual droplets (minimum diameter 30 µm to produce cavities with a depth of 60 µm and an aspect ratio of two. Further, we discuss using the structured silicon substrate as a template for polymer replication to produce superhydrophobic surfaces.

  11. Regenerative Electroless Etching of Silicon.

    Science.gov (United States)

    Kolasinski, Kurt W; Gimbar, Nathan J; Yu, Haibo; Aindow, Mark; Mäkilä, Ermei; Salonen, Jarno

    2017-01-09

    Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1 ) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2 ) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2 . This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2 O5 in HF(aq) as Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

  12. Quantificational Etching of AAO Template

    Institute of Scientific and Technical Information of China (English)

    Guojun SONG; Dong CHEN; Zhi PENG; Xilin SHE; Jianjiang LI; Ping HAN

    2007-01-01

    Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4:1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

  13. Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)

    Science.gov (United States)

    Jannesary, Reyhaneh; Bergmair, Iris; Zamiri, Saeid; Hingerl, Kurt; Hubbard, Graham; Abbott, Steven; Chen, Qin; Allsopp, Duncan

    2009-05-01

    The quest for mass replication has established technologies like nanoimprinting via hard stamps or PDMS stamps, where the stamps are usually produced via Electron Beam Lithography (EBL) for applications in the microelectronic industry. On the other hand, nanopatterning with self ordered structures1 or via holographic patterns provide the basis for large area imprints for applications for example, antireflection coatings based on biomimetic motheyes2. In this work we report on a technology for enabling the mass replication of custom-designed and e-beam lithographically prepared structures via establishing novel roll to roll nanoimprint processes for pattern transfer into UV curable pre-polymers. The new nano-fabrication technology is based on the concept of Disposal Master Technology (DMT) capable of patterning areas up to 1 x 1 m2 and is suitable for mass volume manufacturing of large area arrays of sub-wavelength photonic elements. As an example to show the potential of the application of the new nanoimprint technologies, we choose the fabrication of a photonic crystal (PhC) structure with integrated light coupling devices for low loss interconnection between PhC lightwave circuits and optical fibre systems. We present two methods for fabrication of nanoimprint lithography stamps in Si substrate. In the first method optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and then the pattern transfer into Si using reacting ion etching (RIE) with SF6 as etch gas. In the first method, we use 200nm of positive resist PMMA 950K for EBL exposure. In this method, resist thickness, exposure dose, development time and parameter for etching have been optimized and a photonic crystal of Si-rods in air was fabricated. In the second method lift-off has not been performed and metal mask has been used as master. The subsequent steps for fabricating the master will be presented in detail.

  14. Plasma Etching Improves Solar Cells

    Science.gov (United States)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  15. Methods for dry etching semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  16. Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Jokubavicius, Valdas

    2013-01-01

    An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The infl......An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process...... study presents a considerable omnidirectional luminescence enhancement....

  17. Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

    Energy Technology Data Exchange (ETDEWEB)

    Visconti, P.; Huang, D.; Reshchikov, M.A.; Yun, F.; Cingolani, R.; Smith, D.J.; Jasinski, J.; Swider, W.; Liliental-Weber, Z.; Morkoc, H.

    2002-04-08

    The availability of reliable and quick methods to determine defect density and polarity in GaN films is of great interest. We have used photo-electrochemical (PEC) and hot wet etching using H{sub 3}PO{sub 4} and molten KOH to estimate the defect density in GaN films grown by hydride vapor phase epitaxy (HVPE) and molecular beam epitaxy (MBE). Free-standing whiskers and hexagonal etch pits are formed by PEC and wet etching respectively. Using Atomic Force Microscopy (AFM), we found the whisker density to be similar to etch pit densities for samples etched under precise conditions. Additionally Transmission Electron Microscopy (TEM) observations confirmed dislocation densities obtained by etching which increased our confidence in the consistency of methods used. Hot wet etching was used also to investigate the polarity of GaN films together with Convergent Beam Electron Diffraction (CBED) and AFM imaging. We found that hot H{sub 3}PO{sub 4} etches N-polarity GaN films very quickly resulting in the complete removal or drastic change of surface morphology as revealed by AFM or optical microscopy. On the contrary, the acid attacks only defect sites in Ga-polarity films producing nanometer-scale pits but leaving the defect-free GaN intact and the morphology unchanged. Additionally, the polarity assignments were related to the as-grown morphology and to the growth conditions of the buffer layer and the subsequent GaN layer.

  18. Etch rate modeling for ion-irradiated nitrocellulose

    Energy Technology Data Exchange (ETDEWEB)

    Merhari, L.; Belorgeot, C.; Moliton, J.P. (Laboratoire d' electronique des Polymeres sous Faisceaux Ioniques, 123, Avenue Albert Thomas, 87060 Limoges Cedex (France))

    1990-12-24

    The self-developing mechanism of nitrocellulose when used as an ion beam resist is described by a model predicting the evolution of the etch rate versus irradiation time. Fundamentals of the model based on ion energy deposition dependent ablative development along with related mathematical derivations are given and briefly discussed. Comparison between theoretical results and experimental data available for protons at 20 keV and Ne{sup +}, Ar{sup +}, Kr{sup +} ions at 150 keV is made and shows a good agreement. This result clearly does not conflict with our assumption that the nitrocellulose etch rate is dependent on the total ion deposited energy no matter how the energy is deposited.

  19. Results from modeling and simulation of chemical downstream etch systems

    Energy Technology Data Exchange (ETDEWEB)

    Meeks, E.; Vosen, S.R.; Shon, J.W.; Larson, R.S.; Fox, C.A.; Buchenauer

    1996-05-01

    This report summarizes modeling work performed at Sandia in support of Chemical Downstream Etch (CDE) benchmark and tool development programs under a Cooperative Research and Development Agreement (CRADA) with SEMATECH. The Chemical Downstream Etch (CDE) Modeling Project supports SEMATECH Joint Development Projects (JDPs) with Matrix Integrated Systems, Applied Materials, and Astex Corporation in the development of new CDE reactors for wafer cleaning and stripping processes. These dry-etch reactors replace wet-etch steps in microelectronics fabrication, enabling compatibility with other process steps and reducing the use of hazardous chemicals. Models were developed at Sandia to simulate the gas flow, chemistry and transport in CDE reactors. These models address the essential components of the CDE system: a microwave source, a transport tube, a showerhead/gas inlet, and a downstream etch chamber. The models have been used in tandem to determine the evolution of reactive species throughout the system, and to make recommendations for process and tool optimization. A significant part of this task has been in the assembly of a reasonable set of chemical rate constants and species data necessary for successful use of the models. Often the kinetic parameters were uncertain or unknown. For this reason, a significant effort was placed on model validation to obtain industry confidence in the model predictions. Data for model validation were obtained from the Sandia Molecular Beam Mass Spectrometry (MBMS) experiments, from the literature, from the CDE Benchmark Project (also part of the Sandia/SEMATECH CRADA), and from the JDP partners. The validated models were used to evaluate process behavior as a function of microwave-source operating parameters, transport-tube geometry, system pressure, and downstream chamber geometry. In addition, quantitative correlations were developed between CDE tool performance and operation set points.

  20. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    Science.gov (United States)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  1. Impact of electron irradiation on particle track etching response in polyallyl diglycol carbonate (PADC)

    Indian Academy of Sciences (India)

    R Mishra; S P Tripathy; A Kulshrestha; A Srivastava; S Ghosh; K K Dwivedi; D T Khathing; M Müller; D Fink

    2000-05-01

    In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV 28Si beam and dose-dependent track registration properties of PADC have been studied. Etch-rate values of the PADC irradiated to 100 Mrad dose electron was found to increase by nearly 4 times that of pristine PADC. The electron irradiation has promoted chain scissioning in PADC, thereby converting the polymer into an easily etchable polymer. Moreover, the etching response and the detection efficiency were found to improve by electron irradiation. Scanning electron microscopy of etched samples further revealed the surface damage in these irradiated PADCs

  2. A study of white etching crack formation by compression-torsion experiments

    Directory of Open Access Journals (Sweden)

    S. Averbeck

    2016-10-01

    Full Text Available In this study, an attempt was made to recreate the bearing damage phenomenon “White Etching Cracks” with a simplified testing setup. Rolling contact fatigue conditions were simulated with in-phase and out-ofphase cyclic compression-torsion experiments on 100Cr6 steel specimens. The results are compared in terms of microstructural change. Focused Ion Beam and metallographic analysis reveal that a fine-grained, white etching zone formed in the vicinity of the fatigue cracks of specimens tested with the in-phase load pattern. In contrast, no such structures were found after testing the out-of-phase load pattern. The properties of the white etching zone are characterised in more detail and compared with White Etching Cracks

  3. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  4. Archaeal DNA replication.

    Science.gov (United States)

    Kelman, Lori M; Kelman, Zvi

    2014-01-01

    DNA replication is essential for all life forms. Although the process is fundamentally conserved in the three domains of life, bioinformatic, biochemical, structural, and genetic studies have demonstrated that the process and the proteins involved in archaeal DNA replication are more similar to those in eukaryal DNA replication than in bacterial DNA replication, but have some archaeal-specific features. The archaeal replication system, however, is not monolithic, and there are some differences in the replication process between different species. In this review, the current knowledge of the mechanisms governing DNA replication in Archaea is summarized. The general features of the replication process as well as some of the differences are discussed.

  5. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  6. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching.

    Science.gov (United States)

    Zhan, Zhan; Li, Wei; Yu, Lingke; Wang, Lingyun; Sun, Daoheng

    2017-02-10

    In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  7. Ion-Bombardment of X-Ray Multilayer Coatings - Comparison of Ion Etching and Ion Assisted Deposition

    NARCIS (Netherlands)

    Puik, E. J.; van der Wiel, M. J.; Zeijlemaker, H.; Verhoeven, J.

    1991-01-01

    The effects of two forms of ion bombardment treatment on the reflectivity of multilayer X-ray coatings were compared: ion etching of the metal layers, taking place after deposition, and ion bombardment during deposition, the so-called ion assisted deposition. The ion beam was an Ar+ beam of 200 eV,

  8. Electrochemical preparation of metal microstructures on large areas of etched ion track membranes

    Science.gov (United States)

    Dobrev, D.; Vetter, J.; Angert, N.

    1999-01-01

    A microgalvanic method for metal filling of etched ion tracks in organic foils on large areas is described. The method and the used galvanic cell permit the deposition of stable standing individual metal whiskers with high aspect ratio and a density of 10 5-10 8 per cm 2 on an area of 12.5 cm 2. The method was verified with copper and it is suitable also for various other metals. It can be applied for the replication of etched ion tracks and for the fabrication of microstructures containing large numbers of individual metal whiskers.

  9. SF6 plasma etching of silicon nanocrystals.

    Science.gov (United States)

    Liptak, R W; Devetter, B; Thomas, J H; Kortshagen, U; Campbell, S A

    2009-01-21

    An SF(6)-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH(4)-based plasma. The photoluminescence of the Si-NCs blue-shifts after etching, indicating an etching-induced size reduction of the Si-NCs. It is shown that both the SF(6) plasma power and the flow rate can be utilized to control the etch rate (and thus the size reduction) of the Si-NCs. The SF(6) etched Si-NCs show only low concentrations of residual impurities other than fluorine. Quantum yields as high as 50% have been observed from these SF(6) etched Si-NCs despite oxidation.

  10. Etching of glass microchips with supercritical water.

    Science.gov (United States)

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  11. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  12. Etching.

    Science.gov (United States)

    1980-09-01

    4U c Z . CC 0.0 V 0-01w.0 OCMCC.Ca 0 II 4- 00 La-1 e - .- 0 04’ . £0 tO4 -u 41 ’ Dato C 5-4-00LLi1 c-1 C- - E-1 4-C0 V) -OU1 I~ rC ŔE 0 *z 0 LW 04 c...Z&.. 4.-c o x *C L )P0 A0 0 a54. U * 0 3 i;- L )I.. l C C -44.0 0 2 o; c 0. ama a- .u OE Voz 0 UL 0f ja - .a r DC L _j4 5c .,R r- C *.-* 0 - )W- . 0

  13. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  14. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  15. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  16. Overcoming Etch Challenges on a 6″ Hg1- x Cd x Te MBE on Si Wafer

    Science.gov (United States)

    Apte, Palash; Norton, Elyse; Robinson, Solomon

    2017-10-01

    The effect of increasing photoresist (PR) thickness on the inductively coupled plasma (ICP) dry etched characteristics of a 6″ (c.15 cm) molecular beam epitaxy Hg1- x Cd x Te/Si wafer is investigated. It is determined that the Hg1- x Cd x Te etch rate (ER) does not vary significantly with a change in the PR thickness. Also, the vertical ER of the PR is seen to be independent of the PR thickness, but the lateral ER is seen to reduce significantly with increased PR thickness. Indeed, very little reduction in the pixel mesa area post-dry etch is seen for the thicker PR. Consequently, the trench sidewall angle is also seen to vary as a function of the PR thickness. Since ICP is the more attractive choice for dry etching Hg1- x Cd x Te, this simple, cost-effective way to extend the capabilities of dry etching (larger mesa top area post-dry etch, ability to create tailor-made trench sidewall angles for optimal conformal passivation deposition, and potential for reduced dry etch damage) described here would allow for the fabrication of next generation infrared detectors with increased yield and reduced cost. Although similar results have been presented using the electron cyclotron resonance system to dry etch Hg1- x Cd x Te, to the best of our knowledge, this is the first time that such results have been presented using an ICP system.

  17. The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate.

    Science.gov (United States)

    Chang, Chun-Ming; Shiao, Ming-Hua; Yang, Chin-Tien; Cheng, Chung-Ta; Hsueh, Wen-Jeng

    2014-10-01

    In this study, patterned sapphire substrates are fabricated using nanosphere lithography (NSL) and inductively-coupled-plasma reactive ion etching (ICP-RIE). Polystyrene nanospheres of approximately 600 nm diameter are self-assembled on c-plane sapphire substrates by spin-coating. The diameter of the polystyrene nanospheres is modified to adjust the etching mask pitch cycle using oxygen plasma in the ICP-RIE system. A nickel thin film mask of 100 nm thickness is deposited by electron-beam evaporation on a substrate covered with treated nanospheres. The sapphire substrate is then etched in an inductively coupled plasma system using BCl3/Ar gas, to fabricate a structure with a periodic sub-micron hole array with different sidewall intervals. The DC bias voltage, the sapphire etching rate, the surface roughness, are studied as a function of the ICP and the RF power. Different sub-micron hole arrays with spacing cycles of 89 nm, 139 nm and 167 nm are successfully fabricated on the sapphire substrate, using suitable etching parameters.

  18. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    OpenAIRE

    SABATINI, Camila

    2013-01-01

    Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS) of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II) and a one-step self-etch adhesive (BeautiBond) were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned t...

  19. Anisotropic textured silicon obtained by stain-etching at low etching rates

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-DIaz, B [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Guerrero-Lemus, R [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Marrero, N [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-RodrIguez, C [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Ben-Hander, F A [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain); MartInez-Duart, J M [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-02-21

    The structure, luminescence and etching kinetics for porous silicon stain-etched at different temperatures are studied. The results reveal that for temperatures below 10 deg. C and for short etching times, a novel anisotropic structure based on surface roughness preferentially oriented in the (100) direction is observed. At temperatures higher than 10 deg. C or large etching times, typical macropores and mesopores with non-preferential pore wall orientation are detected. The luminescence spectra of the samples with preferential surface roughness orientation are red-shifted with respect to the samples with typical isotropic orientation. The results are interpreted in terms of average etching rates and pore growth.

  20. Note: electrochemical etching of sharp iridium tips.

    Science.gov (United States)

    Lalanne, Jean-Benoît; Paul, William; Oliver, David; Grütter, Peter H

    2011-11-01

    We describe an etching procedure for the production of sharp iridium tips with apex radii of 15-70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success rate.

  1. Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

    Directory of Open Access Journals (Sweden)

    Kapil Debnath

    2016-11-01

    Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  2. Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

    Science.gov (United States)

    Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

    2016-11-01

    We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  3. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  4. Applications of total-etch adhesive bonding.

    Science.gov (United States)

    Strassler, Howard E

    2003-06-01

    The concept of total-etch adhesion for enamel and dentin is well accepted. Although new techniques with self-etching adhesives have been introduced, there needs to be more reported clinical trials before making a complete switch to these systems. Currently, the only adhesive systems with long-term data to support confidence and success with their clinical use are total-etch systems. Applications for using a total-etch adhesive bonding technique include sealants, orthodontic brackets, anterior composite resins, posterior composite resins, bonded dental silver amalgam, resin cementation with posts, all-metal, porcelain-metal, composite resin, and ceramic restorations, splinting, core foundations, and conservative treatment of the worn dentition. This article will review the concepts for clinical success with total-etch adhesion for a wide range of clinical applications.

  5. Graphene nanoribbons: Relevance of etching process

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  6. Replication Restart in Bacteria.

    Science.gov (United States)

    Michel, Bénédicte; Sandler, Steven J

    2017-07-01

    In bacteria, replication forks assembled at a replication origin travel to the terminus, often a few megabases away. They may encounter obstacles that trigger replisome disassembly, rendering replication restart from abandoned forks crucial for cell viability. During the past 25 years, the genes that encode replication restart proteins have been identified and genetically characterized. In parallel, the enzymes were purified and analyzed in vitro, where they can catalyze replication initiation in a sequence-independent manner from fork-like DNA structures. This work also revealed a close link between replication and homologous recombination, as replication restart from recombination intermediates is an essential step of DNA double-strand break repair in bacteria and, conversely, arrested replication forks can be acted upon by recombination proteins and converted into various recombination substrates. In this review, we summarize this intense period of research that led to the characterization of the ubiquitous replication restart protein PriA and its partners, to the definition of several replication restart pathways in vivo, and to the description of tight links between replication and homologous recombination, responsible for the importance of replication restart in the maintenance of genome stability. Copyright © 2017 American Society for Microbiology.

  7. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Directory of Open Access Journals (Sweden)

    Sabine Geerts

    2012-01-01

    interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1 and 2-step (ADSE Self-Etch adhesives.

  8. Deposition, milling, and etching with a focused helium ion beam

    NARCIS (Netherlands)

    Alkemade, P.F.A.; Veldhoven, E. van

    2012-01-01

    The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

  9. Ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    Science.gov (United States)

    Banks, B. A. (Inventor)

    1983-01-01

    A cerebrospinal fluid shunt in the form of a ventricular catheter for controlling the condition of hydrocephalus by relieving the excessive cerebrospinal fluid pressure is described. A method for fabrication of the catheter and shunting the cerebral fluid from the cerebral ventricles to other areas of the body is also considered. Shunt flow failure occurs if the ventricle collapse due to improper valve function causing overdrainage. The ventricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large openings at its inlet end and a multiplicity of microscopic openings along its lateral surfaces.

  10. Deposition, milling, and etching with a focused helium ion beam

    NARCIS (Netherlands)

    Alkemade, P.F.A.; Veldhoven, E. van

    2012-01-01

    The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

  11. Nanoparticle-based etching of silicon surfaces

    Science.gov (United States)

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  12. Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

    Energy Technology Data Exchange (ETDEWEB)

    Barzen, Lars; Richter, Johannes [Research Group Integrated Optoelectronics and Microoptics (IOE), Physics Department, Kaiserslautern University of Technology, PO Box 3049, D-67653 Kaiserslautern (Germany); Fouckhardt, Henning, E-mail: fouckhar@physik.uni-kl.de [Research Group Integrated Optoelectronics and Microoptics (IOE), Physics Department, Kaiserslautern University of Technology, PO Box 3049, D-67653 Kaiserslautern (Germany); Wahl, Michael; Kopnarski, Michael [Institut für Oberflächen- und Schichtanalytik (IFOS) GmbH, Trippstadter Str. 120, D-67663 Kaiserslautern (Germany)

    2015-02-15

    Experimental results on the application of reflectance anisotropy spectroscopy (RAS) to the monitoring of (reactive) ion etching of monocrystalline semiconductor samples are described. To show the potential of this technique RAS signals collected during etching of GaAs/Al{sub x}Ga{sub 1−x}As multilayer samples are compared to RAS data obtained before during molecular-beam epitaxial (MBE) growth of these very samples. A change of the RIE-RAS spectrum can be attributed to a change of material composition. And the current etch depth can be monitored with an accuracy at least down to several tens of nanometers – f. e. by recording the average reflected intensity.

  13. Electroless epitaxial etching for semiconductor applications

    Science.gov (United States)

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  14. Catalyst-referred etching of silicon

    Directory of Open Access Journals (Sweden)

    Hideyuki Hara et al

    2007-01-01

    Full Text Available A Si wafer and polysilicon deposited on a Si wafer were planarized using catalyst-referred etching (CARE. Two apparatuses were produced for local etching and for planarization. The local etching apparatus was used to planarize polysilicon and the planarization apparatus was used to planarize Si wafers. Platinum and hydrofluoric acid were used as the catalytic plate and the source of reactive species, respectively. The processed surfaces were observed by optical interferometry, atomic force microscopy (AFM and scanning electron microscopy (SEM. The results indicate that the CARE-processed surface is flat and undamaged.

  15. Degradation in the Fatigue Strength of Dentin by Cutting, Etching and Adhesive Bonding

    Science.gov (United States)

    Lee, H.-H.; Majd, H.; Orrego, S.; Majd, B.; Romberg, E.; Mutluay, M.M.; Arola, D.

    2014-01-01

    The processes involved in placing resin composite restorations may degrade the fatigue strength of dentin and increase the likelihood of fractures in restored teeth. Objective The objective of this study was to evaluate the relative changes in strength and fatigue behavior of dentin caused by bur preparation, etching and resin bonding procedures using a 3-step system. Methods Specimens of dentin were prepared from the crowns of unrestored 3rd molars and subjected to either quasi-static or cyclic flexural loading to failure. Four treated groups were prepared including dentin beams subjected to a burr treatment only with a conventional straight-sided bur, or etching treatment only. An additional treated group received both bur and etching treatments, and the last was treated by bur treatment and etching, followed by application of a commercial resin adhesive. The control group consisted of “as sectioned” dentin specimens. Results Under quasi-static loading to failure there was no significant difference between the strength of the control group and treated groups. Dentin beams receiving only etching or bur cutting treatments exhibited fatigue strengths that were significantly lower (p≤0.0001) than the control; there was no significant difference in the fatigue resistance of these two groups. Similarly, the dentin receiving bur and etching treatments exhibited significantly lower (p≤0.0001) fatigue strength than that of the control, regardless of whether an adhesive was applied. Significance The individual steps involved in the placement of bonded resin composite restorations significantly decrease the fatigue strength of dentin, and application of a bonding agent does not increase the fatigue strength of dentin. PMID:24985539

  16. Microtensile dentin and enamel bond strengths of recent self-etching resins.

    Science.gov (United States)

    Brackett, William W; Tay, Franklin R; Looney, Stephen W; Ito, Shuichi; Haisch, Larry D; Pashley, David H

    2008-01-01

    In this study, the microtensile bond strengths of resin composites to dentin and enamel produced by recently introduced self-etching resins were determined. Included were two adhesives with self-etching primers, Clearfil SE (Kuraray) and Peak SE (Ultradent), four self-etching adhesives, Optibond All-In-One (Kerr), Clearfil S3 (Kuraray), Adper Prompt L-Pop (3M ESPE) and iBond (Heraeus Kulzer) and, as a positive control, PQ1 (Ultradent), an etch-and-rinse adhesive. Each product was evaluated using the same hybrid resin composite, Z250 (3M ESPE). Testing was performed after 48 hours using a "non-trimming" microtensile test at a crosshead speed of 0.6 mm/minute. Sample size was five teeth per group, with the value for each tooth calculated by averaging the bond strengths of seven beams derived from it. Mean values in MPa (SD) for dentin were: Clearfil SE 81.6 (3.5),a Peak SE 80.3 (9.9),a PQ1 73.4 (4.9),a,b Optibond All-In-One 64.4 (5.9),b Clearfil S3 62.5 (2.2),b,c iBond 51.0 (4.0)c and Prompt L-Pop 33.9 (6.4).d Mean values in MPa (SD) for enamel were: PQ1 55.6 (2.5),a Clearfil SE 54.1 (5.4),a Prompt L-Pop 54.0 (5.4),a Peak SE 51.8 (1.5),a,b Clearfil S3 44.3 (5.2),b,c Optibond All-In-One 40.1 (2.1)c,d and iBond 33.8 (3.3).d (Values for each substrate with the same letter were not significantly different, one-way ANOVA, Tukey-Kramer Multiple Comparison Test, p<0.05.) Compared to the positive control, PQ1, only adhesives with self-etching primers, Clearfil SE and Peak SE, were as effective in bonding to both enamel and dentin. With the exception of Prompt L-Pop, scanning electron micrographs of the etched enamel surface produced by self-etching products indicated far less surface topography than conventional etching, even for self-etching primer systems producing the same bond strengths as the etch-and-rinse adhesive.

  17. Fabrication of quantum wires by in-situ ion etching and MBE overgrowth

    Science.gov (United States)

    Heyn, Ch; Klein, C.; Kramp, S.; Beyer, S.; Günther, S.; Heitmann, D.; Hansen, W.

    2001-07-01

    We fabricate GaAs quantum wires (QW) that are completely embedded in epitaxial material. Here we report about an in-vacuo fabrication process, in which an ex-situ pre-patterned GaAlAs/GaAs heterostructure is in-situ etched and subsequently transferred under ultra high vacuum conditions into the growth chamber for epitaxial overgrowth. The in-situ etching step involves a chemical assisted ion beam etching with subsequent chemical gas etching. The aim of our investigations is to optimize the in-vacuo process for the reduction of interface states between the etched and overgrown material. We have studied structural properties of such processed samples with cross-sectional scanning-electron microscopy and transmission-electron microscopy. The optical and electronic properties of overgrown QW are investigated with magneto-transport measurements and far-infrared transmission spectroscopy. Overgrown QW show in comparison to conventional QW without overgrowth clearly increased carrier densities and a reduced depletion zone at the QW side-walls. These results indicate the successful reduction of surface states and establish the potential of the suggested in-situ technique for the fabrication of quantum structures.

  18. Freeze fracture and freeze etching.

    Science.gov (United States)

    Chandler, Douglas E; Sharp, William P

    2014-01-01

    Freeze fracture depends on the property of frozen tissues or cells, when cracked open, to split along the hydrophobic interior of membranes, thus revealing broad panoramas of membrane interior. These large panoramas reveal the three-dimensional contours of membranes making the methods well suited to studying changes in membrane architecture. Freshly split membrane faces are visualized by platinum or tungsten shadowing and carbon backing to form a replica that is then cleaned of tissue and imaged by TEM. Etching, i.e., removal of ice from the frozen fractured specimen by sublimation prior to shadowing, can also reveal the true surfaces of the membrane as well as the extracellular matrix and cytoskeletal networks that contact the membranes. Since the resolution of detail in the metal replicas formed is 1-2 nm, these methods can also be used to visualize macromolecules or macromolecular assemblies either in situ or displayed on a mica surface. These methods are available for either specimens that have been chemically fixed or specimens that have been rapidly frozen without chemical intervention.

  19. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  20. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Camila SABATINI

    2013-01-01

    Full Text Available Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II and a one-step self-etch adhesive (BeautiBond were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12 as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100 were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37°C, 100% humidity with a testing machine (Ultra-tester at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of p<0.05. A field emission scanning electron microscope was used for the failure mode analysis. Results Both adhesives evidenced a significant decrease in the dentin SBS with the use of an optional phosphoric acid-etching step (p<0.05. Preliminary phosphoric acid etching yielded significantly higher enamel SBS for FL-Bond II (p<0.05 only, but not for BeautiBond. FL-Bond II applied to un-etched dentin demonstrated the highest mean bond strength (37.7±3.2 MPa and BeautiBond applied to etched dentin showed the lowest mean bond strength (18.3±6.7 MPa among all tested groups (p<0.05. Conclusion The use of a preliminary acid-etching step with 37.5% phosphoric acid had a significant adverse effect on the dentin bond strength of the self-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin.

  1. Dislocation Etching Solutions for Mercury Cadmium Selenide

    Science.gov (United States)

    2014-09-01

    manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy this report when it is no longer...dislocation—thus enabling EPD measurement of Hg1-xCdxSe. 15. SUBJECT TERMS Mercury cadmium selenide, etch pits, dislocations, preferential etching...by the US Army Research Laboratory and was accomplished under Cooperative Agreement # W911NF-12-2-0019. vi

  2. DNA replication and cancer

    DEFF Research Database (Denmark)

    Boyer, Anne-Sophie; Walter, David; Sørensen, Claus Storgaard

    2016-01-01

    A dividing cell has to duplicate its DNA precisely once during the cell cycle to preserve genome integrity avoiding the accumulation of genetic aberrations that promote diseases such as cancer. A large number of endogenous impacts can challenge DNA replication and cells harbor a battery of pathways...... causing DNA replication stress and genome instability. Further, we describe cellular and systemic responses to these insults with a focus on DNA replication restart pathways. Finally, we discuss the therapeutic potential of exploiting intrinsic replicative stress in cancer cells for targeted therapy....

  3. White spot lesions: Does etching really matter?

    Science.gov (United States)

    Abufarwa, Moufida; Voorhees, Robert D; Varanasi, Venu G; Campbell, Phillip M; Buschang, Peter H

    2017-08-01

    The clinical significance of acid etching prior to orthodontic bonding is controversial. In the present study, we evaluated the effect of 15 seconds of acid etching on enamel demineralization. Twenty-seven human molars were sectioned and assigned to two groups. Under standardized conditions, the enamel surfaces were imaged using FluoreCam to obtain baseline data. Group 1 was etched using 37% phosphoric acid for 15 seconds, rinsed with water, and then imaged again; group 2 was only rinsed with water. Water rinse was collected for calcium chemical analysis using inductively-coupled plasma auger electron spectrometry. Both groups were subjected to 9 days of pH cycling, after which final FluoreCam images were obtained. Group 1 showed a significant increase in lesion area (P=.012), decrease in light intensity (P=.009), and decrease in impact (P=.007) after acid etching. The amount of calcium that leached out over the 15 seconds was 14 ppm ±2.4 (0.35 mmol/L±0.06). Following pH cycling, there was no statistically-significant between-group difference in overall enamel demineralization. Initial demineralization caused by 15 seconds of acid etching does not increase enamel susceptibility to further demineralization. This suggests that acid etching does not increase the risk of developing white spot lesions during orthodontics. © 2017 John Wiley & Sons Australia, Ltd.

  4. Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry

    Science.gov (United States)

    Takahashi, Satoshi; Horie, Tomoyuki; Shirayama, Yuya; Yokosuka, Shuntaro; Kashimura, Kenta; Hayashi, Akihiro; Iwase, Chikatsu; Shimbori, Shun'ichiro; Tokumoto, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

    Quadrupole mass spectrometry (QMS) has been applied to monitor the etching processes in a localized plasma etching system. An inward plasma was employed for etching in which the etching gas was discharged in the narrow gap between the etched sample and the entrance of an evacuating capillary tube. As the etching products are immediately evacuated through the capillary, a QMS system equipped at the capillary exit is able to analyze the products without any loss in concentration via diffusion into the chamber. Two kinds of samples, thermally grown SiO2 on Si and spin-coated polyimide film on Si, were etched, and the chemical species in the evacuated etching gas were analyzed with QMS, which enables monitoring of the composition of the surface being etched. Samples of thermal SiO2 were etched with CF4 plasma. The peak height of the SiF3+ signal during the SiO2 etching was lower than that observed during etching of the silicon substrate, leading to endpoint detection. The endpoint detection of the polyimide film etching was conducted using two etching gases: pure O2 and pure CF4. When O2 was used, the endpoint was detected by the decrease of the mass peak attributed to CO. When CF4 was employed, the plasma was able to etch both the polyimide film and Si substrate. Then the endpoint was detected by the increase of the mass peak of SiF3+ produced by the etching of the Si substrate.

  5. Replicating animal mitochondrial DNA

    Directory of Open Access Journals (Sweden)

    Emily A. McKinney

    2013-01-01

    Full Text Available The field of mitochondrial DNA (mtDNA replication has been experiencing incredible progress in recent years, and yet little is certain about the mechanism(s used by animal cells to replicate this plasmid-like genome. The long-standing strand-displacement model of mammalian mtDNA replication (for which single-stranded DNA intermediates are a hallmark has been intensively challenged by a new set of data, which suggests that replication proceeds via coupled leading-and lagging-strand synthesis (resembling bacterial genome replication and/or via long stretches of RNA intermediates laid on the mtDNA lagging-strand (the so called RITOLS. The set of proteins required for mtDNA replication is small and includes the catalytic and accessory subunits of DNA polymerase y, the mtDNA helicase Twinkle, the mitochondrial single-stranded DNA-binding protein, and the mitochondrial RNA polymerase (which most likely functions as the mtDNA primase. Mutations in the genes coding for the first three proteins are associated with human diseases and premature aging, justifying the research interest in the genetic, biochemical and structural properties of the mtDNA replication machinery. Here we summarize these properties and discuss the current models of mtDNA replication in animal cells.

  6. A new generation of self-etching adhesives: comparison with traditional acid etch technique.

    Science.gov (United States)

    Holzmeier, Marcus; Schaubmayr, Martin; Dasch, Walter; Hirschfelder, Ursula

    2008-03-01

    The aim of this study was to determine the shear bond strength (SBS), etching pattern and depth, and debonding performance of several market-leading, self-etching (SE) adhesives primarily used in restorative dentistry (iBond, Clearfil S(3) Bond, Clearfil Protect Bond, AdheSE, XenoIII), two experimental self-etching adhesives (exp. Bond 1, exp. Bond 2) and one experimental self-etching cement (SE Zement) used with and without prior phosphoric acid-etching, and to compare them to an orthodontic self-etching product (Transbond Plus SE Primer) and to traditional acid-etch technique (Transbond XT Primer, phosphoric acid) All adhesives were applied on pumiced and embedded bovine incisors following the manufacturers' instructions. Then one bracket each (coated with Transbond XT composite) was bonded (n = 20). Transbond XT was polymerized for 20 s from the incisal and gingival sides using a halogen device positioned at a constant 5 mm from and a 45 degrees angle to the specimen. The specimens were stored in distilled water for 24 h at 37 degrees C before measuring SBS. The ARI (adhesive remnant index) for all specimens was determined from the sheared-off brackets of each. After conditioning, the surface texture was morphologically evaluated from scanning electron microscope (SEM) images, while the etching depth was determined using a confocal laser-scanning microscope (CLSM). All groups were tested for normal distribution and analyzed by applying ANOVA, Kruskal-Wallis or the t test. In addition, a Bonferroni correction was used. The median values of the SBS tests were: SE Zement 3.0 MPa, SE Zement preceded by phosphoric acid etching 11.2 MPa, experimental bond 1: 7.4 MPa, experimental bond 2: 5.6 MPa, iBond 8.1 MPa, Clearfil S(3) Bond 14.1 MPa, Clearfil Protect Bond 16.6 MPa, Clearfil SE Bond 15.9 MPa, AdheSE 16.0 MPa, XenoIII 16.1 MPa, Transbond SE Primer 20.7 MPa, acid-etching+Transbond XT Primer 21.0 MPa. With the exception of iBond, we observed no significant

  7. Polymerization monitoring in plasma etching systems

    Science.gov (United States)

    Kim, Jinsoo

    1999-11-01

    In plasma etching processes, the polymers used to enhance etch anisotropy and selectivity also deposit on various parts of the reaction chamber. This polymerization on reactor surface not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. This thesis explores the development of a direct in-situ polymerization monitoring sensor to minimize the drifts in plasma etching processes. In addition, polymerization dependencies on basic processing parameters and polymerization effects on etching characteristics have been explored for the first time using a direct in-situ sensor. The polymer buildup process is a strong function of parameters such as power, base pressure, and flow rate, and is also dependent on the reactor materials used, temperature, and the hydrogen/oxygen concentrations present. Experiments performed in an Applied Materials 8300 plasma etcher show a significant increase in polymerization with increased pressure and flow rates and a decrease as a function of power. These experiments provide insight into how the chamber state changes under the different processing recipes used for etching specific material layers and also suggest how the chamber seasoning process can best be carried out. The reactor surface, which serves as both a source and a sink for reactive gas species, not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. The etch rate and selectivity variations for specific silicon dioxide and silicon nitride etching recipes have been explored as a function of the polymer thickness on the reactor walls. The etch rates of nitride and polysilicon decrease dramatically with polymer thickness up to a thickness of 60nm, while the oxide etch rate remains virtually constant due to the polymerization

  8. Manipulating the aspect ratio of Si surface nanopattern with low energy ion sputtering and reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Hofsaess, Hans; Zhang, Kun; Vetter, Ulrich; Bobes, Omar; Bruesewitz, Christoph [II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

    2012-07-01

    A periodic self-forming surface nanostructure can be produced with low energy ion sputtering. The wavelength of such nanopattern can be controlled very well, by varying the energy and the incident angle of ion-beam. A low energy N{sub 2}{sup +} ion beam produces not only nanoripples on Si surface, but also forms a thin silicon nitride layer on the ridges of the ripples. This thin silicon nitride layer has a thickness from some nm to 20 nm (depending on the ion energy and the incident angle) and acts as an inert nanomask for reactive ion etching process, resulting in formation of deep grooves. The depth of the grooves depends on the etching time. By combining the low energy N{sub 2}{sup +} ion beam sputtering and reactive ion etching, the formation of surface nanopattern with controllable average values of wavelength, ridge width and groove depth on Si surface can be realized. This surface nanostructured silicon with controllable features could be widely used in nanotechnology, including so-called black silicon for solar cells. Here, we report on the formation of nanoripple patterns by low energy N{sub 2}{sup +} ion beam ({<=}10 keV), and the modification of these nanopatterns by reactive ion etching. In addition, the optical properties of the nanostructured silicon surfaces are discussed.

  9. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  10. Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heyn, Ch.; Sonnenberg, D.; Graf, A.; Kerbst, J.; Stemmann, A.; Hansen, W. [Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

    2014-05-15

    Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.

  11. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  12. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  13. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    NARCIS (Netherlands)

    Erickson, R.L.; de Gee, A.J.; Feilzer, A.J.

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load

  14. Analysis of Etched CdZnTe Substrates

    Science.gov (United States)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  15. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  16. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  17. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  18. Facet selective etching of Au microcrystallites

    Institute of Scientific and Technical Information of China (English)

    Gangaiah Mettela and Giridhar U. Kulkarni

    2015-01-01

    High-symmetry crystals exhibit isotropic properties. Inducing anisotropy, e.g., by facet selective etching, is considered implausible in face-centered cubic (FCC) metals, particularly gold, which, in addition to being an FCC, is noble. We report for the first time the facet selective etching of Au microcrystals obtained in the form of cuboctahedra and pentagonal rods from the thermolysis of a gold- organic precursor. The selective etching of {111} and {100} facets was achieved using a capping method in which tetraoctylammonium cations selectively cap the {111} facets while Br- ions protect the {100} facets. The exposed facets are oxidized by O2/C1-, yielding a variety of interesting geometries. The facet selective etching of the Au microcrystallites is governed only by the nature of the facets; the geometry of the microcystallite does not appear to play a significant role. The etched surfaces appear rough, but a closer examination reveals well-defined corrugations that are indexable to high hkl values. Such surfaces exhibit enhanced Raman activity.

  19. The Replication Recipe: What makes for a convincing replication?

    NARCIS (Netherlands)

    Brandt, M.J.; IJzerman, H.; Dijksterhuis, A.J.; Farach, F.J.; Geller, J.; Giner-Sorolla, R.; Grange, J.A.; Perugini, M.; Spies, J.R.; Veer, A. van 't

    2014-01-01

    Psychological scientists have recently started to reconsider the importance of close replications in building a cumulative knowledge base; however, there is no consensus about what constitutes a convincing close replication study. To facilitate convincing close replication attempts we have developed

  20. Surface degradation mechanism during the fluorine-based plasma etching of a low-k material for nanoscale semiconductors.

    Science.gov (United States)

    Kim, Jong Kyu; Kang, Seung Hyun; Cho, Sung Il; Lee, Sung Ho; Kim, Kyong Nam; Yeom, G Y

    2014-12-01

    The degradation of a low-k material surface during the exposure to plasma etching is one of the most serious problems to be solved for the realization of high speed semiconductor devices. In this study, the factors causing the degradation of a low-k material surface during the etching using fluorine-based plasma etching have been investigated by using XPS. As the plasma factors, active radicals, bombardment energy, and charge of the ions were considered and, as the low-k material, methyl silsesquioxane (MSQ) has been used. The XPS results showed that the ion bombardment during the plasma etching of MSQ affects the breaking of MSQ bone structure by changing the Si-O bonds and Si-C bonds to Si-F mostly, while fluorine-based radicals in the plasma mostly affect the change of Si-CH3 bonds to Si-CH(x)F(y). By removing the charge of the ions during the bombardment, the MSQ properties were further improved. When F intensity which is related to the damage of the MSQ surface is estimated, the bombardment energy, reactive radical density, and charge of the ions were responsible for -18%, -53%, -19% of the F intensity in the MSQ. Therefore, by using the neutral beam etching instead of a conventional ICP etching, the degradation on the MSQ surface estimated by the F intensity remaining on the MSQ surface could be decreased to 10%.

  1. Analytical model of plasma-chemical etching in planar reactor

    Science.gov (United States)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  2. Modeling DNA Replication.

    Science.gov (United States)

    Bennett, Joan

    1998-01-01

    Recommends the use of a model of DNA made out of Velcro to help students visualize the steps of DNA replication. Includes a materials list, construction directions, and details of the demonstration using the model parts. (DDR)

  3. Eukaryotic DNA Replication Fork.

    Science.gov (United States)

    Burgers, Peter M J; Kunkel, Thomas A

    2017-06-20

    This review focuses on the biogenesis and composition of the eukaryotic DNA replication fork, with an emphasis on the enzymes that synthesize DNA and repair discontinuities on the lagging strand of the replication fork. Physical and genetic methodologies aimed at understanding these processes are discussed. The preponderance of evidence supports a model in which DNA polymerase ε (Pol ε) carries out the bulk of leading strand DNA synthesis at an undisturbed replication fork. DNA polymerases α and δ carry out the initiation of Okazaki fragment synthesis and its elongation and maturation, respectively. This review also discusses alternative proposals, including cellular processes during which alternative forks may be utilized, and new biochemical studies with purified proteins that are aimed at reconstituting leading and lagging strand DNA synthesis separately and as an integrated replication fork.

  4. Abiotic self-replication.

    Science.gov (United States)

    Meyer, Adam J; Ellefson, Jared W; Ellington, Andrew D

    2012-12-18

    The key to the origins of life is the replication of information. Linear polymers such as nucleic acids that both carry information and can be replicated are currently what we consider to be the basis of living systems. However, these two properties are not necessarily coupled. The ability to mutate in a discrete or quantized way, without frequent reversion, may be an additional requirement for Darwinian evolution, in which case the notion that Darwinian evolution defines life may be less of a tautology than previously thought. In this Account, we examine a variety of in vitro systems of increasing complexity, from simple chemical replicators up to complex systems based on in vitro transcription and translation. Comparing and contrasting these systems provides an interesting window onto the molecular origins of life. For nucleic acids, the story likely begins with simple chemical replication, perhaps of the form A + B → T, in which T serves as a template for the joining of A and B. Molecular variants capable of faster replication would come to dominate a population, and the development of cycles in which templates could foster one another's replication would have led to increasingly complex replicators and from thence to the initial genomes. The initial genomes may have been propagated by RNA replicases, ribozymes capable of joining oligonucleotides and eventually polymerizing mononucleotide substrates. As ribozymes were added to the genome to fill gaps in the chemistry necessary for replication, the backbone of a putative RNA world would have emerged. It is likely that such replicators would have been plagued by molecular parasites, which would have been passively replicated by the RNA world machinery without contributing to it. These molecular parasites would have been a major driver for the development of compartmentalization/cellularization, as more robust compartments could have outcompeted parasite-ridden compartments. The eventual outsourcing of metabolic

  5. Adenovirus DNA Replication

    OpenAIRE

    Hoeben, Rob C.; Uil, Taco G.

    2013-01-01

    Adenoviruses have attracted much attention as probes to study biological processes such as DNA replication, transcription, splicing, and cellular transformation. More recently these viruses have been used as gene-transfer vectors and oncolytic agents. On the other hand, adenoviruses are notorious pathogens in people with compromised immune functions. This article will briefly summarize the basic replication strategy of adenoviruses and the key proteins involved and will deal with the new deve...

  6. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  7. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  8. Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

    Science.gov (United States)

    Qian, H.; Lee, K. B.; Vajargah, S. Hosseini; Novikov, S. V.; Guiney, I.; Zaidi, Z. H.; Jiang, S.; Wallis, D. J.; Foxon, C. T.; Humphreys, C. J.; Houston, P. A.

    2017-02-01

    A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.

  9. Minichromosome replication in vitro: inhibition of re-replication by replicatively assembled nucleosomes.

    Science.gov (United States)

    Krude, T; Knippers, R

    1994-08-19

    Single-stranded circular DNA, containing the SV40 origin sequence, was used as a template for complementary DNA strand synthesis in cytosolic extracts from HeLa cells. In the presence of the replication-dependent chromatin assembly factor CAF-1, defined numbers of nucleosomes were assembled during complementary DNA strand synthesis. These minichromosomes were then induced to semiconservatively replicate by the addition of the SV40 initiator protein T antigen (re-replication). The results indicate that re-replication of minichromosomes appears to be inhibited by two independent mechanisms. One acts at the initiation of minichromosome re-replication, and the other affects replicative chain elongation. To directly demonstrate the inhibitory effect of replicatively assembled nucleosomes, two types of minichromosomes were prepared: (i) post-replicative minichromosomes were assembled in a reaction coupled to replication as above; (ii) pre-replicative minichromosomes were assembled independently of replication on double-stranded DNA. Both types of minichromosomes were used as templates for DNA replication under identical conditions. Replicative fork movement was found to be impeded only on post-replicative minichromosome templates. In contrast, pre-replicative minichromosomes allowed one unconstrained replication cycle, but re-replication was inhibited due to a block in fork movement. Thus, replicatively assembled chromatin may have a profound influence on the re-replication of DNA.

  10. FIB Secondary Etching Method for Fabrication of Fine CNT Forest Metamaterials

    Science.gov (United States)

    Pander, Adam; Hatta, Akimitsu; Furuta, Hiroshi

    2017-10-01

    Anisotropic materials, like carbon nanotubes (CNTs), are the perfect substitutes to overcome the limitations of conventional metamaterials; however, the successful fabrication of CNT forest metamaterial structures is still very challenging. In this study, a new method utilizing a focused ion beam (FIB) with additional secondary etching is presented, which can obtain uniform and fine patterning of CNT forest nanostructures for metamaterials and ranging in sizes from hundreds of nanometers to several micrometers. The influence of the FIB processing parameters on the morphology of the catalyst surface and the growth of the CNT forest was investigated, including the removal of redeposited material, decreasing the average surface roughness (from 0.45 to 0.15 nm), and a decrease in the thickness of the Fe catalyst. The results showed that the combination of FIB patterning and secondary etching enabled the growth of highly aligned, high-density CNT forest metamaterials. The improvement in the quality of single-walled CNTs (SWNTs), defined by the very high G/D peak ratio intensity of 10.47, demonstrated successful fine patterning of CNT forest for the first time. With a FIB patterning depth of 10 nm and a secondary etching of 0.5 nm, a minimum size of 150 nm of CNT forest metamaterials was achieved. The development of the FIB secondary etching method enabled for the first time, the fabrication of SWNT forest metamaterials for the optical and infrared regime, for future applications, e.g., in superlenses, antennas, or thermal metamaterials.

  11. Monolithic mode-locked lasers with deeply dry etched Bragg mirror

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    gasmixture, gas flow, chamber pressure and the power supplied to the plasma2.Figure 1: SEM micrograph of a deeply etched 2nd order grating and waveguidein InP. 1K. yvind et al, Phot. Technology Letters 16, 975-977 (2004)2Y. Feurprier et al., J. Vac. Sci. A 16(3), 1552-1559 (1998)...... section, such as self-phase modulation. The solution to this problem is to integratethe laser with a wavelength selective Bragg grating. Another advantage of the gratingshould be lower noise. Deep Reactive Ion Etching (RIE) of the grating is a key for lowcostmass production of these lasers, making...... and high index regions (etched andunetched), is 240 nm for a 1st order grating and 480 nm for the 2nd order.Fabrication: The mask for the grating is formed by a combination of E-beam writing andUV-lithography. The resist pattern is transferred to a 100 nm SiO2-film, with a CHF3(Freon) based dry etch...

  12. Dislocation in heteroepitaxial diamond visualized by hydrogen plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, K.; Kodama, H. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan); Suzuki, K. [TOPLAS ENGINEERING Co., Ltd., Chofu, Tokyo 182-0006 (Japan); Sawabe, A. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan)

    2016-02-01

    The classification of etch pits formed by hydrogen plasma etching on heteroepitaxial diamond has been done by cross-sectional transmission electron microscope (TEM). We demonstrated that the origin of etch pit was mainly [001] threading dislocation. From invisibility criterion of dislocation contrast in TEM observation, this dislocation was identified as edge and 45° mixed dislocation. The correlation between dislocation types and etch pit shape was discussed. - Highlights: • The etch pits formed by plasma etching on heteroepitaxial diamond have been clarified by TEM. • The origin of etch pit was mainly [001] threading dislocation. • These dislocations were identified as edge and 45° mixed type. • The correlation between dislocation types and etch pit shape.

  13. Irregular shaping of polystyrene nanosphere array by plasma etching

    National Research Council Canada - National Science Library

    Luo, Hao; Liu, Tingting; Ma, Jun; Wang, Wei; Li, Heng; Wang, Pengwei; Bai, Jintao; Jing, Guangyin

    2013-01-01

    .... Here, by plasma etching, the controllable tailoring of the nanosphere is realized and its morphology dependence on the initial shape, microscopic roughness, and the etching conditions is investigated quantitatively...

  14. Effect of enamel etching time on roughness and bond strength

    National Research Council Canada - National Science Library

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra...

  15. The Influence of Sliding and Contact Severity on the Generation of White Etching Cracks

    Energy Technology Data Exchange (ETDEWEB)

    Gould, Benjamin [Argonne National Lab. (ANL), Argonne, IL (United States); Greco, Aaron [Univ. of Delaware, Newark, DE (United States)

    2015-10-17

    White etching cracks (WECs) have been identified as the dominant mechanism of premature failure for bearings within wind turbine gearboxes. Though WECs have been observed in the field for over a decade, the exact mechanisms which lead to this failure are still debated, and benchtop replication has proven difficult. In previously published work, WECs have been replicated only through the use of component level test rigs, where complete bearings are tested. In these tests, the factors that are thought to drive the formation of WECs, such as slide-to-roll ratio (SRR) and lubricant film thickness, cannot not be easily altered or controlled. In this paper, WECs have been replicated on a three rings on roller, benchtop test rig, which allowed for a direct investigation into the influence that SRR magnitude, sliding direction, and the lubricant film thickness have on surface failures and WEC generation. It was determined that WEC were formed in samples that experienced -30% SRR at various lubrication conditions, however, at lower levels of negative SRR and positive SRR up to 30% no white-etching cracks were observed.

  16. Review of micromachining of ceramics by etching

    Institute of Scientific and Technical Information of China (English)

    H.T.TING; K.A.ABOU-EL-HOSSEIN; H.B.CHUA

    2009-01-01

    In the last two decades, there has been an enormous surge in interest in ceramic materials and, as a result, there have been significant advances in their development and applications. Their inherent properties, such as capability of operating at temperatures far above metals, high level of hardness and toughness, low coefficient of thermal expansion and high thermal conductivity rendered ceramics to be one of the leading engineering materials. Many research works have been conducted in the past few years on machining of advanced ceramics using different processing methods in order to obtain a better surface roughness, higher material removal rate and improved tool life. Micromachining using chemical etching is one of those methods that do not involve the problem of tool life and direct tool-work piece contact. However, only a few research works have been done on micromachining of ceramics using chemical etching. Hence, study of chemical machining of advanced ceramics is still needed as the process has found wide application in the industry because of its relative low operating costs. In this work, we summarize the recent progresses in machining of different types of advanced ceramics, material processing methods such as wet etching and dry etching, and finally the prospects for control of material removal rate and surface quality in the process of ceramic micromachining.

  17. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  18. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  19. TrackEtching - A Java based code for etched track profile calculations in SSNTDs

    Science.gov (United States)

    Muraleedhara Varier, K.; Sankar, V.; Gangadathan, M. P.

    2017-09-01

    A java code incorporating a user friendly GUI has been developed to calculate the parameters of chemically etched track profiles of ion-irradiated solid state nuclear track detectors. Huygen's construction of wavefronts based on secondary wavelets has been used to numerically calculate the etched track profile as a function of the etching time. Provision for normal incidence and oblique incidence on the detector surface has been incorporated. Results in typical cases are presented and compared with experimental data. Different expressions for the variation of track etch rate as a function of the ion energy have been utilized. The best set of values of the parameters in the expressions can be obtained by comparing with available experimental data. Critical angle for track development can also be calculated using the present code.

  20. Investigating variation in replicability: A "Many Labs" replication project

    NARCIS (Netherlands)

    Klein, R.A.; Ratliff, K.A.; Vianello, M.; Adams, R.B.; Bahnik, S.; Bernstein, M.J.; Bocian, K.; Brandt, M.J.; Brooks, B.; Brumbaugh, C.C.; Cemalcilar, Z.; Chandler, J.; Cheong, W.; Davis, W.E.; Devos, T.; Eisner, M.; Frankowska, N.; Furrow, D.; Galliani, E.M.; Hasselman, F.W.; Hicks, J.A.; Hovermale, J.F.; Hunt, S.J.; Huntsinger, J.R.; IJzerman, H.; John, M.S.; Joy-Gaba, J.A.; Kappes, H.B.; Krueger, L.E.; Kurtz, J.; Levitan, C.A.; Mallett, R.K.; Morris, W.L.; Nelson, A.J.; Nier, J.A.; Packard, G.; Pilati, R.; Rutchick, A.M.; Schmidt, K.; Skorinko, J.L.M.; Smith, R.; Steiner, T.G.; Storbeck, J.; Van Swol, L.M.; Thompson, D.; Veer, A.E. van 't; Vaughn, L.A.; Vranka, M.; Wichman, A.L.; Woodzicka, J.A.; Nosek, B.A.

    2014-01-01

    Although replication is a central tenet of science, direct replications are rare in psychology. This research tested variation in the replicability of 13 classic and contemporary effects across 36 independent samples totaling 6,344 participants. In the aggregate, 10 effects replicated consistently.

  1. Hepatitis B virus replication

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Hepadnaviruses, including human hepatitis B virus (HBV), replicate through reverse transcription of an RNA intermediate, the pregenomic RNA (pgRNA). Despite this kinship to retroviruses, there are fundamental differences beyond the fact that hepadnavirions contain DNA instead of RNA. Most peculiar is the initiation of reverse transcription: it occurs by protein-priming, is strictly committed to using an RNA hairpin on the pgRNA,ε, as template, and depends on cellular chaperones;moreover, proper replication can apparently occur only in the specialized environment of intact nucleocapsids.This complexity has hampered an in-depth mechanistic understanding. The recent successful reconstitution in the test tube of active replication initiation complexes from purified components, for duck HBV (DHBV),now allows for the analysis of the biochemistry of hepadnaviral replication at the molecular level. Here we review the current state of knowledge at all steps of the hepadnaviral genome replication cycle, with emphasis on new insights that turned up by the use of such cellfree systems. At this time, they can, unfortunately,not be complemented by three-dimensional structural information on the involved components. However, at least for the s RNA element such information is emerging,raising expectations that combining biophysics with biochemistry and genetics will soon provide a powerful integrated approach for solving the many outstanding questions. The ultimate, though most challenging goal,will be to visualize the hepadnaviral reverse transcriptase in the act of synthesizing DNA, which will also have strong implications for drug development.

  2. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (p<0.001) of bond strength with surface roughness of enamel. Conclusion All groups might show clinically

  3. Dopant Selective Reactive Ion Etching of Silicon Carbide

    Science.gov (United States)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  4. Laser-induced backside wet etching of silica glass with ns-pulsed DPSS UV laser at the repetition rate of 40 kHz

    Energy Technology Data Exchange (ETDEWEB)

    Niino, Hiroyuki; Kawaguchi, Yoshizo; Sato, Tadatake; Narazaki, Aiko; Gumpenberger, Thomas; Kurosaki, Ryozo [Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2007-04-15

    Surface micro-structuring of silica glass plates was performed by using laser- induced backside wet etching (LIBWE) upon irradiation with a single-mode laser beam from a diode-pumped solid-state (DPSS) UV laser with 40 kHz repetition rate at 266 nm. We have succeeded in a well-defined micro-pattern formation without debris and microcrack generation around the etched area on the basis of a galvanometer scanning system for the laser beam. Bubble dynamics after liquid ablation was monitored by impulse pressure detection with a fast- response piezoelectric pressure gauge.

  5. Comparative Analysis of in vitro Performance of Total-Etch and Self-Etch Adhesives

    Directory of Open Access Journals (Sweden)

    Timur V. Melkumyan

    2016-12-01

    Full Text Available The aim of the study was in vitro assessment of shear bond strength and micro-leakage after application of total-etch and self-etch adhesive systems. Materials and Methods: Four adhesive systems were chosen for assessment of adhesion performance: Contax (DMG, GmbH, Bond Force (Tokuyama Dental Corp. Japan Mfr, Te-Econom Bond (Ivoclar Vivadent, Liechtenstein and Swisstec SL Bond (Coltene, Switzerland. The assessment of bond strength was performed on 20 tooth samples, which were prepared in accordance with the UltraTest technique for shear bond strength (SBS estimation. The test was conducted at a crosshead speed of 1.0 mm/min and results were fixed in kilograms. The assessment of SBS was performed on enamel and dentin separately. Microleakage assessment of self-etch and total-etch adhesive systems was performed on 20 extracted non-carious upper human premolars with immersion in 1% methylene blue solution after thermocycling. Results: Good SBS results and microleakage values on the dentin substrate were obtained after application of the Contax self-etch bonding agent. But the values of bond strength to enamel and the extent of dye penetration within the composite-enamel interface were still better with the total-etch approach.

  6. Microtensile bond strength of etch and rinse versus self-etch adhesive systems.

    Science.gov (United States)

    Hamouda, Ibrahim M; Samra, Nagia R; Badawi, Manal F

    2011-04-01

    The aim of this study was to compare the microtensile bond strength of the etch and rinse adhesive versus one-component or two-component self-etch adhesives. Twelve intact human molar teeth were cleaned and the occlusal enamel of the teeth was removed. The exposed dentin surfaces were polished and rinsed, and the adhesives were applied. A microhybride composite resin was applied to form specimens of 4 mm height and 6 mm diameter. The specimens were sectioned perpendicular to the adhesive interface to produce dentin-resin composite sticks, with an adhesive area of approximately 1.4 mm(2). The sticks were subjected to tensile loading until failure occurred. The debonded areas were examined with a scanning electron microscope to determine the site of failure. The results showed that the microtensile bond strength of the etch and rinse adhesive was higher than that of one-component or two-component self-etch adhesives. The scanning electron microscope examination of the dentin surfaces revealed adhesive and mixed modes of failure. The adhesive mode of failure occurred at the adhesive/dentin interface, while the mixed mode of failure occurred partially in the composite and partially at the adhesive/dentin interface. It was concluded that the etch and rinse adhesive had higher microtensile bond strength when compared to that of the self-etch adhesives.

  7. Dentin diffusion of HEMA released from etch-and-rinse and self-etch bonding systems.

    Science.gov (United States)

    Rathke, Andreas; Alt, Andreas; Gambin, Nadin; Haller, Bernd

    2007-12-01

    The aim of this in vitro study was to determine the diffusion of 2-hydroxyethyl methacrylate (HEMA) released from different bonding systems (BS) through dentin. Occlusal cavities with a remaining dentin thickness (RDT) of 0.5 mm (n=90) and 0.25 mm (n=80), respectively, were prepared in dentin discs of non-carious human molars. Artificial pulp chambers were attached to the pulpal side of each dentin disc. Bonding systems were applied with (Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus) or without (AdheSE, Adper Prompt L-Pop, Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus Self Etch, Xeno III) prior phosphoric acid etching. HEMA was detected by gas chromatography/mass spectrometry (n=10 per BS and RDT). The highest mean HEMA concentration was found in the 0.25 mm RDT group treated with OptiBond FL (13.3 microg) and the lowest mean HEMA concentration was detected in the 0.5 mm RDT group treated with AdheSE (0.5 microg). At 0.25 mm RDT the quantities of HEMA recovered in the artificial pulp chambers were significantly higher than at 0.5 mm RDT, except for Clearfil SE Bond. Etching with phosphoric acid increased the detected HEMA quantities compared with self-etch BS. In deep cavity preparations, etching with phosphoric acid should be avoided in favor of the use of self-etch BS.

  8. Psychology, replication & beyond.

    Science.gov (United States)

    Laws, Keith R

    2016-06-01

    Modern psychology is apparently in crisis and the prevailing view is that this partly reflects an inability to replicate past findings. If a crisis does exists, then it is some kind of 'chronic' crisis, as psychologists have been censuring themselves over replicability for decades. While the debate in psychology is not new, the lack of progress across the decades is disappointing. Recently though, we have seen a veritable surfeit of debate alongside multiple orchestrated and well-publicised replication initiatives. The spotlight is being shone on certain areas and although not everyone agrees on how we should interpret the outcomes, the debate is happening and impassioned. The issue of reproducibility occupies a central place in our whig history of psychology.

  9. Single-mask microfabrication of aspherical optics using KOH anisotropic etching of Si.

    Science.gov (United States)

    de Lima Monteiro, D W; Akhzar-Mehr, O; Sarro, P M; Vdovin, G

    2003-09-08

    We report on the microfabrication of continuous aspherical optical surfaces with a single-mask process, using anisotropic etching of silicon in a KOH water solution. Precise arbitrary aspherical surfaces with lateral scales on the order of several millimeters and a profile depth on the order of several micrometers were fabricated using this process. We discuss the factors defining the precision of the formed component and the resulting surface quality. We demonstrate 1 mm and 5 mm replicated aspherical phase plates, reproducing defocus, tilt, astigmatism and high-order aberrations. The technology has a potential for serial production of reflective and refractive arbitrary aspherical micro-optical components.

  10. Single-mask microfabrication of aspherical optics using KOH anisotropic etching of Si

    Science.gov (United States)

    de Lima Monteiro, D. W.; Akhzar-Mehr, O.; Sarro, P. M.; Vdovin, G.

    2003-09-01

    We report on the microfabrication of continuous aspherical optical surfaces with a single-mask process, using anisotropic etching of silicon in a KOH water solution. Precise arbitrary aspherical surfaces with lateral scales on the order of several millimeters and a profile depth on the order of several micrometers were fabricated using this process. We discuss the factors defining the precision of the formed component and the resulting surface quality. We demonstrate 1 mm and 5 mm replicated aspherical phase plates, reproducing defocus, tilt, astigmatism and high-order aberrations. The technology has a potential for serial production of reflective and refractive arbitrary aspherical micro-optical components.

  11. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    A.I. Abdalla; A.J. Feilzer

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid Bond’

  12. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  13. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    Science.gov (United States)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  14. The research on conformal acid etching process of glass ceramic

    Science.gov (United States)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  15. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  16. DNA replication origins in archaea

    OpenAIRE

    Zhenfang eWu; Jingfang eLiu; Haibo eYang; Hua eXiang

    2014-01-01

    DNA replication initiation, which starts at specific chromosomal site (known as replication origins), is the key regulatory stage of chromosome replication. Archaea, the third domain of life, use a single or multiple origin(s) to initiate replication of their circular chromosomes. The basic structure of replication origins is conserved among archaea, typically including an AT-rich unwinding region flanked by several conserved repeats (origin recognition box, ORB) that are located adjacent to ...

  17. Fabrication of honeycomb texture on poly-Si by laser interference and chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bogeum; Lee, Myeongkyu, E-mail: myeong@yonsei.ac.kr

    2013-11-01

    In this paper, we present a laser-interference method to fabricate honeycomb textures on poly-Si wafer for reflection reduction. When exposed to three interfering pulsed laser beams at 532 nm, the Si surface was periodically melted in accordance with the interference pattern. As a result, concave holes were generated on the surface because the melted material overflowed and condensed at the periphery. Subsequent acid etching revealed uniform and clean honeycomb textures. The texture depth could be controlled by varying the irradiation condition and a minimum reflectance of 10% was obtained. Transmission electron microscopy analysis showed that no irradiation-induced damage remained after etching. This approach can be a cost-effective alternative to lithographic processes for fabricating high-efficiency poly-Si solar cells.

  18. Plasma etching to enhance the surface insulating stability of alumina for fusion applications

    Directory of Open Access Journals (Sweden)

    M. Malo

    2016-12-01

    Full Text Available A significant increase in the surface electrical conductivity of alumina, considered one of the most promising insulating materials for numerous applications in fusion devices, has been observed during ion bombardment in vacuum due to oxygen loss by preferential sputtering. Although this is expected to cause serious limitations to insulating components functionality, recent studies showed it is possible to restore the damaged lattice by oxygen reincorporation during thermal treatments in air. These studies also revealed a correlation between conductivity and ion beam induced luminescence, which is being used to monitor surface electrical conductivity degradation and help qualify the post irradiation recovery. Work now carried out for Wesgo alumina considers oxygen implantation and plasma etching as additional methods to improve recovered layer depth and quality. Both conductivity and luminescence results indicate the potential use of plasma etching not only for damage recovery, but also as a pre-treatment to enhance material stability during irradiation.

  19. In situ definition of semiconductor structures by selective area growth and etching

    Science.gov (United States)

    Colas, E.; Caneau, C.; Frei, M.; Clausen, E. M., Jr.; Quinn, W. E.; Kim, M. S.

    1991-10-01

    Selective area growth (etching) by low-pressure organometallic chemical vapor deposition (LP-OMCVD) is utilized to intentionally modulate the local growth (etch) rate by choosing the pattern of dielectric-masked areas, thereby defining III-V semiconductor structures in situ. This technique is applied to tune the emission wavelength of a GaAs/AlGaAs quantum well structure, and to obtain InP/InGaAs superlattice structures tapered in thickness with growth rate increases as high as 800%, suitable for integrated optics applications. In contrast, selective deposition by organometallic molecular beam epitaxy (OMMBE) does not produce growth rate enhancements, thereby preventing similar in situ definition schemes but allowing to integrate structures with optimized nominal thicknesses.

  20. Replication studies in longevity

    DEFF Research Database (Denmark)

    Varcasia, O; Garasto, S; Rizza, T

    2001-01-01

    In Danes we replicated the 3'APOB-VNTR gene/longevity association study previously carried out in Italians, by which the Small alleles (less than 35 repeats) had been identified as frailty alleles for longevity. In Danes, neither genotype nor allele frequencies differed between centenarians and 20...

  1. Replication-Fork Dynamics

    NARCIS (Netherlands)

    Duderstadt, Karl E.; Reyes-Lamothe, Rodrigo; van Oijen, Antoine M.; Sherratt, David J.

    2014-01-01

    The proliferation of all organisms depends on the coordination of enzymatic events within large multiprotein replisomes that duplicate chromosomes. Whereas the structure and function of many core replisome components have been clarified, the timing and order of molecular events during replication re

  2. Coronavirus Attachment and Replication

    Science.gov (United States)

    1988-03-28

    synthesis during RNA replication of vesicular stomatitis virus. J. Virol. 49:303-309. Pedersen, N.C. 1976a. Feline infectious peritonitis: Something old...receptors on intestinal brush border membranes from normal host species were developed for canine (CCV), feline (FIPV), porcine (TGEV), human (HCV...gastroenteritis receptor on pig BBMs ...... ................. ... 114 Feline infectious peritonitis virus receptor on cat BBMs ... .............. 117 Human

  3. Chemical etching of deformation sub-structures in quartz

    Science.gov (United States)

    Wegner, M. W.; Christie, J. M.

    1983-02-01

    Chemical etching of dislocations has been studied in natural and synthetic quartz single crystals, in deformed synthetic quartz and in naturally and experimentally deformed quartzites. The ability of different etchants to produce polished or preferentially etched surfaces on quartz is described. Dislocation etching was achieved on all crystal planes examined by using a saturated solution of ammonium bifluoride as the etchant. Appropriate etching times were determined for etching quartzites for grain size, subgrain boundaries, deformation lamellae, dislocations and twins. Growth and polished surfaces of synthetic single crystal quartz were similarly etched and dislocation etch pits, characteristic of various orientations were found. The use of ammonium bifluoride proved to be expecially advantageous for the basal plane, producing a polished surface with etch pits, suitable for dislocation etch pit counting. “Double” etch pits have been found on Dauphiné twin boundaries on the basal plane and the first order prism, using this etchant. Slip lines and deformation bands were suitably etched on deformed synthetic crystal surfaces for identification of the slip planes. Other acidic etchants have been explored and their application to the study of deformation structures in quartz crystals is discussed.

  4. Surface engineering of SiC via sublimation etching

    Science.gov (United States)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  5. Block copolymer templated etching on silicon.

    Science.gov (United States)

    Qiao, Yinghong; Wang, Dong; Buriak, Jillian M

    2007-02-01

    The use of self-assembled polymer structures to direct the formation of mesoscopic (1-100 nm) features on silicon could provide a fabrication-compatible means to produce nanoscale patterns, supplementing conventional lithographic techniques. Here we demonstrate nanoscale etching of silicon, applying standard aqueous-based fluoride etchants, to produce three-dimensional nanoscale features with controllable shapes, sizes, average spacing, and chemical functionalization. The block copolymers serve to direct the silicon surface chemistry by controlling the spatial location of the reaction as well as concentration of reagents. The interiors of the resulting etched nanoscale features may be selectively functionalized with organic monolayers, metal nanoparticles, and other materials, leading to a range of ordered arrays on silicon.

  6. Wafer scale oblique angle plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  7. Effect of chemomechanical caries removal on bonding of self-etching adhesives to caries-affected dentin.

    Science.gov (United States)

    Hamama, Hamdi Hosni Hamdan; Yiu, Cynthia Kar Yung; Burrow, Michael Frances

    2014-12-01

    To evaluate the effect of enzyme-based (Papacárie) and sodium-hypochlorite-based (Carisolv) chemomechanical caries removal methods on bonding of self-etching adhesives to caries-affected dentin, in comparison to the standard rotary-instrument caries removal method. Seventy-eight carious permanent molars exhibiting frank cavitation into dentin were used. Forty-eight teeth were randomly divided into three groups, according to the caries excavation methods: (i) Papacárie, (ii) Carisolv and (iii) a round steel bur. After caries removal, each group was subdivided into two groups for two-step (Clearfil SE Bond) or one-step (Clearfil S3 Bond) self-etching adhesive application and resin composite buildups. Bonded specimens were sectioned into beams for microtensile bond strength testing. Bond strength data were analyzed using three-way ANOVA and Tukey's test. For interfacial nanoleakage evaluation using a field-emission scanning electron microscope, caries was similarly removed from the remaining thirty carious molars, bonding was performed as for bond strength testing, and the teeth were sectioned. RESULTS of three-way ANOVA revealed that bond strength was significantly affected by "adhesive" (p0.05). The bond strength of the two-step self-etching adhesive was significantly higher than that of the one-step self-etching adhesive (pChemomechanical caries removal did not affect the bonding of self-etching adhesives to caries-affected dentin as compared to caries excavation with rotary instruments.

  8. Characterization of aluminum surfaces: Sorption and etching

    Science.gov (United States)

    Polkinghorne, Jeannette Clera

    Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive properties can be successfully utilized in the drive for higher energy and smaller-scale storage devices. Fundamental information gained regarding anion interaction with the aluminum surface can be applied to tailor etch processes. Standard electrochemical techniques and SEM are respectively used to etch and analyze the aluminum substrate. Aluminum electrolytic capacitors are comprised of aluminum anode foil covered by an anodically grown aluminum oxide dielectric film, electrolytic paper impregnated with electrolyte, and aluminum cathode foil. Two main processes are involved in the fabrication of aluminum electrolytic capacitors, namely etching and anodic oxide formation. Etching of the anode foil results in a higher surface area (up to 20 times area enlargement compared to unetched foil) that translates into a higher capacitance gain, permitting more compact and lighter capacitor manufacture. Anodic oxide formation on the anode, creates the required dielectric to withstand high voltage operation. A

  9. Application of stencil masks for ion beam lithographic patterning

    Energy Technology Data Exchange (ETDEWEB)

    Brun, S., E-mail: sebastien.brun@he-arc.ch [Institut des Microtechnologies Appliquées, Haute Ecole Arc Ingénierie, Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Savu, V. [Laboratoire des Microsystèmes (LMIS), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Schintke, S. [HEIG-VD, University of Applied Sciences of Western Switzerland, Institut de Micro et Nano Techniques – Laboratory of Applied NanoSciences (MNT-LANS), Route de Cheseaux 1, CH-1401 Yverdon-les-Bains (Switzerland); Guibert, E.; Keppner, H. [Institut des Microtechnologies Appliquées, Haute Ecole Arc Ingénierie, Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Brugger, J. [Laboratoire des Microsystèmes (LMIS), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Whitlow, H.J. [Institut des Microtechnologies Appliquées, Haute Ecole Arc Ingénierie, Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland)

    2013-07-01

    The application of Au/Si{sub 3}N{sub 4} stencil masks for the transfer of patterns using different MeV-ion beams with various substrates has been investigated. The techniques investigated were namely, conventional lithography with positive- and negative-tone resist polymers, oxygen ion-induced etching of PTFE and patterning using an etch-stop in silicon. We demonstrate that using different well-known microtechnology material-modification techniques, patterns can be transferred using stencil masks and broad ion beams to nanomachining scenarios. In the case of the etch-stop process; writing of 3D micropatterns with different height levels was achieved using a broad beam. The stencil masks were found to be durable with no obvious deterioration and well suited for exposure of large areas.

  10. Crystallographic orientation dependent etching of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Nemes-Incze, Peter; Biro, Laszlo Peter [Research Institute for Technical Physics and Materials Science, PO. Box 49, 1525 Budapest (Hungary); Magda, Gabor [Budapest University of Technology and Economics (BME), PO Box 91, 1521 Budapest (Hungary); Kamaras, Katalin [Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, 1525, Budapest (Hungary)

    2010-04-15

    Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO{sub 2} support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples. This etching technique opens up new possibilities in graphene patterning and modification. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Track etching technique in membrane technology

    Energy Technology Data Exchange (ETDEWEB)

    Apel, P. E-mail: apel@lnr.jinr.ru

    2001-06-01

    Track membrane (TM) technology is an example of industrial application of track etching technique. Track-etch membranes offer distinct advantages over conventional membranes due to their precisely determined structure. Their pore size, shape and density can be varied in a controllable manner so that a membrane with the required transport and retention characteristics can be produced. The use of heavy ion accelerators made it possible to vary LET of track-forming particles, angle distribution of pore channels and pore lengths. So far the track formation and etching process has been studied in much detail for several polymeric materials. Today we understand determining factors and have numerous empirical data enabling us to manufacture any particular product based on polyethylene terephthalate (PET) or polycarbonate (PC) films. Pore shape can be made cylindrical, conical, funnel-like, or cigar-like at will. A number of modification methods has been developed for creating TMs with special properties and functions. Applications of 'conventional' track membranes can be categorized into three groups: process filtration, cell culture, and laboratory filtration. The use in biology stands out among other areas. Nuclear track pores find diverse applications as model systems and as templates for the synthesis of micro- and nanostructures.

  12. ZERODUR: bending strength data for etched surfaces

    Science.gov (United States)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  13. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Kamlendra Awasthi; Vaibhav Kulshreshtha; B Tripathi; N K Acharya; M Singh; Y K Vijay

    2006-06-01

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was penetrated by a single heavy ion of Ni7+ of 100 MeV, followed by preferential chemical etching of the ion track. Ion permeation measurements show that pores in polymeric membrane are charged or neutralized, which depends upon the variation in concentration of the solvent. The – curve at concentration, N/10, shows that the pores are negatively charged, whereas at concentration, N/20, the linear nature of – curve indicates that the pores approach towards neutralized state and on further concentration, N/40, the pores become fully neutralized, consequently the rectifier behaviour of pores has been omitted. The gas permeability of hydrogen and carbon dioxide of this membrane was measured with increasing etching time. The permeability was measured from both the sides. Permeability at the front was larger than the permeability at the back which shows asymmetric behaviour of membranes.

  14. Ribbon Ion Beam with Controlled Directionality and Local Reactive Chemistry

    Science.gov (United States)

    Biloiu, Costel; Gilchrist, Glen; Kontos, Alex; Basame, Solomon; Rockwell, Tyler; Campbell, Chris; Daniels, Kevin; Allen, Ernest; Wallace, Jay; Ballou, Jon; Hertel, Richard; Chen, Tsung-Liang; Liang, Shurong; Singh, Vikram

    2016-09-01

    A plasma processing technology designed for etch of 3D semiconductor structures is presented. The technology is characterized by controllable ion directionality and local reactive chemistry and it is based on proprietary Applied Materials - Varian Semiconductor Equipment ribbon ion beam architecture. It uses a combination of inert gas ion beam and injection of reactive chemical species at the Point-of-Use (PoU), i.e., at the wafer surface. The ion source uses an inductively coupled plasma source and a diode-type extraction optics. A beam shaping electrode allows extraction of two symmetrical ribbon-like beamlets. The ion beam has in situ controllable ion angular distribution in both mean angle and angular spread. The beam has a uniform distribution of beam current and angles over a waist exceeding 300 mm, allowing full wafer processing in one pass. Chemical compounds are delivered at PoU through linear shower heads. The reactive chemical compound delivered in this fashion maintains its molecular integrity. This result in protection of the trench side walls from deposition of etch residue and facilitates formation of volatile byproducts. The technology was used successfully for mitigation of Magnetic Tunel Junction etch residue. Other applications were this technology differentiate from present technologies are contact liner etch, Co recess, and 1D hole elongation.

  15. Reversible Switching of Cooperating Replicators

    Science.gov (United States)

    Urtel, Georg C.; Rind, Thomas; Braun, Dieter

    2017-02-01

    How can molecules with short lifetimes preserve their information over millions of years? For evolution to occur, information-carrying molecules have to replicate before they degrade. Our experiments reveal a robust, reversible cooperation mechanism in oligonucleotide replication. Two inherently slow replicating hairpin molecules can transfer their information to fast crossbreed replicators that outgrow the hairpins. The reverse is also possible. When one replication initiation site is missing, single hairpins reemerge from the crossbreed. With this mechanism, interacting replicators can switch between the hairpin and crossbreed mode, revealing a flexible adaptation to different boundary conditions.

  16. [Restoration of composite on etched stainless steel crowns. (1)].

    Science.gov (United States)

    Goto, G; Zang, Y; Hosoya, Y

    1990-01-01

    Object of investigation The retention of composite resin to etched stainless steel crowns was tested as a possible method for restoring primary anterior teeth. Method employed 1) SEM observation Stainless steel crowns (Sankin Manufacture Co.) were etched with an aqua resia to create surface roughness and undercut to retain the composite resin to the crowns. Etching times were 1, 2, 3, 5, 8, 10 and 20 minutes, then washed in a 70% alcohol solution using an ultrasonic washer and dried. A total of 96 etched samples and non etched control samples were observed through the scanning electron microscope (Hitachi 520). 2) Shear bond strength test Stainless steel crowns were etched in an aqua resia from 1 to 20 minutes, then washed and dried. Composite resin (Photo Clearfil A, Kuraray Co.) with the bonding agent was placed on the crowns and the shear bond strength was tested in 56 samples using an Autograph (DCS-500, Shimazu). Results 1) SEM observation showed that the etching surface of stainless steel crowns created surface roughness and undercut. The most desirable surface was obtained in the 3 to 5 minute etching time specimens. 2) The highest bond strength was obtained in a 3 minute etching specimen. It was 42.12 MPa, although 29.26 MPa in mean value. Conclusion Etching with an aqua resia increased the adherence of composite resin to the surface of stainless steel crowns.

  17. Scalable shape-controlled fabrication of curved microstructures using a femtosecond laser wet-etching process

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Hao; Yang, Qing; Chen, Feng, E-mail: chenfeng@mail.xjtu.edu.cn; Liu, Hewei; Du, Guangqing; Deng, Zefang; Si, Jinhai; Yun, Feng; Hou, Xun

    2013-07-01

    Materials with curvilinear surface microstructures are highly desirable for micro-optical and biomedical devices. However, realization of such devices efficiently remains technically challenging. This paper demonstrates a facile and flexible method to fabricate curvilinear microstructures with controllable shapes and dimensions. The method composes of femtosecond laser exposures and chemical etching process with the hydrofluoric acid solutions. By fixed-point and step-in laser irradiations followed by the chemical treatments, concave microstructures with different profiles such as spherical, conical, bell-like and parabola were fabricated on silica glasses. The convex structures were replicated on polymers by the casting replication process. In this work, we used this technique to fabricate high-quality microlens arrays and high-aspect-ratio microwells which can be used in 3D cell culture. This approach offers several advantages such as high-efficient, scalable shape-controllable and easy manipulations. - Highlights: • We demonstrate a flexible method to fabricate curvilinear microstructures. • This method composes of femtosecond laser exposures and chemical etching process. • Concave microstructures with different profiles were fabricated on silica glasses. • High-quality microlens arrays and high-aspect-ratio microwells were fabricated.

  18. Histologic Evaluation of Human Pulp Response to Total Etch and Self Etch Adhesive Systems

    OpenAIRE

    Malekipour, Mohammad Reza; Razavi, Sayed Mohammad; Khazaei, Saber; Kazemi, Shantia; Behnamanesh, Maryam; Shirani, Farzaneh

    2013-01-01

    Background To investigate pulp response to the application of two types adhesive systems (total-etch and self-etch) in human premolar teeth. Materials and Methods Cavities limited to enamel walls in all margins with 2.5 mm depth were prepared on buccal surfaces of thirty three human premolars. The cavities were treated with the following adhesive. Single Bond (SB) and Prompt L-Pop (PLP). The teeth were extracted after 30 days and prepared due to histological technique. Results Pulp responses ...

  19. Chromatin replication and epigenome maintenance

    DEFF Research Database (Denmark)

    Alabert, Constance; Groth, Anja

    2012-01-01

    initiates, whereas the replication process itself disrupts chromatin and challenges established patterns of genome regulation. Specialized replication-coupled mechanisms assemble new DNA into chromatin, but epigenome maintenance is a continuous process taking place throughout the cell cycle. If DNA...

  20. Chromatin replication and epigenome maintenance

    DEFF Research Database (Denmark)

    Alabert, Constance; Groth, Anja

    2012-01-01

    initiates, whereas the replication process itself disrupts chromatin and challenges established patterns of genome regulation. Specialized replication-coupled mechanisms assemble new DNA into chromatin, but epigenome maintenance is a continuous process taking place throughout the cell cycle. If DNA...

  1. Initiation of adenovirus DNA replication.

    OpenAIRE

    Reiter, T; Fütterer, J; Weingärtner, B; Winnacker, E L

    1980-01-01

    In an attempt to study the mechanism of initiation of adenovirus DNA replication, an assay was developed to investigate the pattern of DNA synthesis in early replicative intermediates of adenovirus DNA. By using wild-type virus-infected cells, it was possible to place the origin of adenovirus type 2 DNA replication within the terminal 350 to 500 base pairs from either of the two molecular termini. In addition, a variety of parameters characteristic of adenovirus DNA replication were compared ...

  2. Chromatin replication and epigenome maintenance

    DEFF Research Database (Denmark)

    Alabert, Constance; Groth, Anja

    2012-01-01

    Stability and function of eukaryotic genomes are closely linked to chromatin structure and organization. During cell division the entire genome must be accurately replicated and the chromatin landscape reproduced on new DNA. Chromatin and nuclear structure influence where and when DNA replication...... initiates, whereas the replication process itself disrupts chromatin and challenges established patterns of genome regulation. Specialized replication-coupled mechanisms assemble new DNA into chromatin, but epigenome maintenance is a continuous process taking place throughout the cell cycle. If DNA...

  3. Er:YAG laser radiation etching of enamel

    Science.gov (United States)

    Dostalova, Tatjana; Jelinkova, Helena; Krejsa, Otakar; Hamal, Karel; Kubelka, Jiri; Prochazka, Stanislav

    1996-12-01

    This study compares the effects of acid treatment and Er:YAG laser radiation on the enamel. The permanent human molars were used. Oval cavities in the buccal surface were prepared and the edges of cavities were irradiated by Er:YAG radiation. The energy of laser was 105 mJ and repetition rate 1 Hz. The radiation was focused by CaF2 lens and the sample was placed in the focus. Ten samples were etched by 35 percent phosphoric acid during 60 s. Than cavities were filled with composite resin following manufacturers directions. By laser etching the structure enamel in section was rougher. The optimal connection between the enamel and composite resin was achieved in 75 percent by acid etching and in 79.2 percent by Er:YAG laser etching. Er:YAG laser etching could be alternative method for etching of enamel.

  4. Replication Research and Special Education

    Science.gov (United States)

    Travers, Jason C.; Cook, Bryan G.; Therrien, William J.; Coyne, Michael D.

    2016-01-01

    Replicating previously reported empirical research is a necessary aspect of an evidence-based field of special education, but little formal investigation into the prevalence of replication research in the special education research literature has been conducted. Various factors may explain the lack of attention to replication of special education…

  5. Replication Research and Special Education

    Science.gov (United States)

    Travers, Jason C.; Cook, Bryan G.; Therrien, William J.; Coyne, Michael D.

    2016-01-01

    Replicating previously reported empirical research is a necessary aspect of an evidence-based field of special education, but little formal investigation into the prevalence of replication research in the special education research literature has been conducted. Various factors may explain the lack of attention to replication of special education…

  6. Replication data collection highlights value in diversity of replication attempts

    Science.gov (United States)

    DeSoto, K. Andrew; Schweinsberg, Martin

    2017-01-01

    Researchers agree that replicability and reproducibility are key aspects of science. A collection of Data Descriptors published in Scientific Data presents data obtained in the process of attempting to replicate previously published research. These new replication data describe published and unpublished projects. The different papers in this collection highlight the many ways that scientific replications can be conducted, and they reveal the benefits and challenges of crucial replication research. The organizers of this collection encourage scientists to reuse the data contained in the collection for their own work, and also believe that these replication examples can serve as educational resources for students, early-career researchers, and experienced scientists alike who are interested in learning more about the process of replication. PMID:28291224

  7. Track-etched membrane: dynamics of pore formation

    Science.gov (United States)

    Ferain, E.; Legras, R.

    1994-02-01

    The dynamics of pore formation during etching of heavy ion (Ar 9+ - 4.5 MeV/amu) irradiated bisphenol-A polycarbonate (PC) and polyethylene terephthalate (PET) films is determined by a conductivity cell. This work presents the theoretical basis of this method and describes the experimental procedure. The obtained results allow the determination of the track ( Vt) and bulk ( Vg) etch rates, and an estimate of the damage zone diameter in PC before etching.

  8. Bulk molybdenum field emitters by inductively coupled plasma etching.

    Science.gov (United States)

    Zhu, Ningli; Cole, Matthew T; Milne, William I; Chen, Jing

    2016-12-07

    In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

  9. Modification of etching patterns in bovine dental enamel.

    Science.gov (United States)

    Lees, S; Trombly, P L; Skobe, Z; Gariepy, E E; Trull, A F

    1979-08-01

    It is presumed that the etching pattern is controlled by the residual organic content of dental enamel. Pretreatment with 1.ON NaOH sould remove the organic material and modify the etching pattern. SEM studies and other tests for physical and chemical properties show that the predicted modification of the etching pattern, when the tooth surface is pretreated with NaOH solution, occurs apparently without other changes or properties.

  10. Lateral electrochemical etching of III-nitride materials for microfabrication

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung

    2017-02-28

    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  11. Advanced plasma etching processes for dielectric materials in VLSI technology

    Science.gov (United States)

    Wang, Juan Juan

    Manufacturable plasma etching processes for dielectric materials have played an important role in the Integrated Circuits (IC) industry in recent decades. Dielectric materials such as SiO2 and SiN are widely used to electrically isolate the active device regions (like the gate, source and drain from the first level of metallic interconnects) and to isolate different metallic interconnect levels from each other. However, development of new state-of-the-art etching processes is urgently needed for higher aspect ratio (oxide depth/hole diameter---6:1) in Very Large Scale Integrated (VLSI) circuits technology. The smaller features can provide greater packing density of devices on a single chip and greater number of chips on a single wafer. This dissertation focuses on understanding and optimizing of several key aspects of etching processes for dielectric materials. The challenges are how to get higher selectivity of oxide/Si for contact and oxide/TiN for vias; tight Critical Dimension (CD) control; wide process margin (enough over-etch); uniformity and repeatability. By exploring all of the parameters for the plasma etch process, the key variables are found and studied extensively. The parameters investigated here are Power, Pressure, Gas ratio, and Temperature. In particular, the novel gases such as C4F8, C5F8, and C4F6 were studied in order to meet the requirements of the design rules. We also studied CF4 that is used frequently for dielectric material etching in the industry. Advanced etch equipment was used for the above applications: the medium-density plasma tools (like Magnet-Enhanced Reactive Ion Etching (MERIE) tool) and the high-density plasma tools. By applying the Design of Experiments (DOE) method, we found the key factors needed to predict the trend of the etch process (such as how to increase the etch rates, selectivity, etc.; and how to control the stability of the etch process). We used JMP software to analyze the DOE data. The characterization of the

  12. State of the art etch-and-rinse adhesives

    OpenAIRE

    Pashley, David H.; Tay, Franklin R.; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M.; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2010-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti...

  13. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  14. Anatomy of Mammalian Replication Domains

    Science.gov (United States)

    Takebayashi, Shin-ichiro; Ogata, Masato; Okumura, Katsuzumi

    2017-01-01

    Genetic information is faithfully copied by DNA replication through many rounds of cell division. In mammals, DNA is replicated in Mb-sized chromosomal units called “replication domains.” While genome-wide maps in multiple cell types and disease states have uncovered both dynamic and static properties of replication domains, we are still in the process of understanding the mechanisms that give rise to these properties. A better understanding of the molecular basis of replication domain regulation will bring new insights into chromosome structure and function. PMID:28350365

  15. The Tobacco etch virus P3 protein forms mobile inclusions via the early secretory pathway and traffics along actin microfilaments.

    Science.gov (United States)

    Cui, Xiaoyan; Wei, Taiyun; Chowda-Reddy, R V; Sun, Guangyu; Wang, Aiming

    2010-02-05

    Plant potyviruses encode two membrane proteins, 6K and P3. The 6K protein has been shown to induce virus replication vesicles. However, the function of P3 remains unclear. In this study, subcellular localization of the Tobacco etch virus (TEV) P3 protein was investigated in Nicotiana benthamiana leaf cells. The TEV P3 protein localized on the endoplasmic reticulum (ER) membrane and formed punctate inclusions in association with the Golgi apparatus. The trafficking of P3 to the Golgi was mediated by the early secretory pathway. The Golgi-associated punctate structures originated from the ER exit site (ERES). Deletion analyses identified P3 domains required for the retention of P3 at the Golgi. Moreover, the P3 punctate structure was found to traffic along the actin filaments and colocalize with the 6K-containing replication vesicles. Taken together, these data support previous suggestions that P3 may play dual roles in virus movement and replication.

  16. Pre-etching vs. grinding in promotion of adhesion to intact enamel using self-etch adhesives.

    Science.gov (United States)

    Nazari, Amir; Shimada, Yasushi; Sadr, Alireza; Tagami, Junji

    2012-01-01

    This study was aimed to determine the effectiveness of grinding and pre-etching in promotion of adhesion to human intact enamel using the self-etch adhesive (SEA) Adper Easy Bond (3M ESPE). Etch-and-rinse adhesive Adper Single Bond (3M ESPE) served as control. Composite cylinders (AP-X Kuraray) were built and after 24 h micro-shear bond strengths (MSBS) were measured. Bonding interfaces were evaluated under scanning electron microscope (SEM). For evaluation of average roughness (Ra) and morphological analysis, treated enamel surfaces were observed under SEM and confocal laser scanning microscope (CLSM) with 3D surface profiling. Highest bond strengths were obtained by pre-etching and grinding showed a less significant role. Phosphoric acid (PA) etching compare to grinding created significantly rougher surface (Ra: 0.72 and 0.43 µm respectively). Therefore, this study recommends pre-etching the intact enamel prior to application of the adhesive instead of grinding.

  17. A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

    NARCIS (Netherlands)

    Roozeboom, F.; Kniknie, B.J.; Lankhorst, A.M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.W.G.; Dingemans, G.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In

  18. Mass spectrometry analysis of etch products from CR-39 plastic irradiated by heavy ions

    Science.gov (United States)

    Kodaira, S.; Nanjo, D.; Kawashima, H.; Yasuda, N.; Konishi, T.; Kurano, M.; Kitamura, H.; Uchihori, Y.; Naka, S.; Ota, S.; Ideguchi, Y.; Hasebe, N.; Mori, Y.; Yamauchi, T.

    2012-09-01

    As a feasibility study, gas chromatography-mass spectrometry (GC-MS) and matrix-assisted laser desorption ionization-mass spectrometry (MALDI-MS) have been applied to analyze etch products of CR-39 plastic (one of the most frequently used solid states nuclear track detector) for the understanding of track formation and etching mechanisms by heavy ion irradiation. The etch products of irradiated CR-39 dissolved in sodium hydroxide solution (NaOH) contain radiation-induced fragments. For the GC-MS analysis, we found peaks of diethylene glycol (DEG) and a small but a definitive peak of ethylene glycol (EG) in the etch products from CR-39 irradiated by 60 MeV N ion beams. The etch products of unirradiated CR-39 showed a clear peak of DEG, but no other significant peaks were found. DEG is known to be released from the CR-39 molecule as a fragment by alkaline hydrolysis reaction of the polymer. We postulate that EG was formed as a result of the breaking of the ether bond (C-O-C) of the DEG part of the CR-39 polymer by the irradiation. The mass distribution of polyallylalcohol was obtained from the etch products from irradiated and unirradiated CR-39 samples by MALDI-MS analysis. Polyallylalcohol, with the repeating mass interval of m/z = 58 Da (dalton) between m/z = 800 and 3500, was expected to be produced from CR-39 by alkaline hydrolysis. We used IAA as a matrix to assist the ionization of organic analyte in MALDI-MS analysis and found that peaks from IAA covered mass spectrum in the lower m/z region making difficult to identify CR-39 fragment peaks which were also be seen in the same region. The mass spectrometry analysis using GC-MS and MALDI-MS will be powerful tools to investigate the radiation-induced polymeric fragments and helping to understand the track formation mechanism in CR-39 by heavy ions.

  19. Modeling inhomogeneous DNA replication kinetics.

    Directory of Open Access Journals (Sweden)

    Michel G Gauthier

    Full Text Available In eukaryotic organisms, DNA replication is initiated at a series of chromosomal locations called origins, where replication forks are assembled proceeding bidirectionally to replicate the genome. The distribution and firing rate of these origins, in conjunction with the velocity at which forks progress, dictate the program of the replication process. Previous attempts at modeling DNA replication in eukaryotes have focused on cases where the firing rate and the velocity of replication forks are homogeneous, or uniform, across the genome. However, it is now known that there are large variations in origin activity along the genome and variations in fork velocities can also take place. Here, we generalize previous approaches to modeling replication, to allow for arbitrary spatial variation of initiation rates and fork velocities. We derive rate equations for left- and right-moving forks and for replication probability over time that can be solved numerically to obtain the mean-field replication program. This method accurately reproduces the results of DNA replication simulation. We also successfully adapted our approach to the inverse problem of fitting measurements of DNA replication performed on single DNA molecules. Since such measurements are performed on specified portion of the genome, the examined DNA molecules may be replicated by forks that originate either within the studied molecule or outside of it. This problem was solved by using an effective flux of incoming replication forks at the model boundaries to represent the origin activity outside the studied region. Using this approach, we show that reliable inferences can be made about the replication of specific portions of the genome even if the amount of data that can be obtained from single-molecule experiments is generally limited.

  20. The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

    Science.gov (United States)

    Niu, Y. C.; Liu, Z.; Liu, X. J.; Gao, Y.; Lin, W. L.; Liu, H. T.; Jiang, Y. S.; Ren, X. K.

    2017-01-01

    In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.

  1. A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head

    Directory of Open Access Journals (Sweden)

    Shoubin LIU

    2016-05-01

    Full Text Available The pole tip of perpendicular recording head is constructed in a stacked structure with materials of NiCoFe, NiFe, Al2O3 and AlTiC. The surfaces of different materials are set at different heights below the air-bearing surface of slider. This paper presented a plasma dry etching process for Pole Tip Recession (PTR based on an ion beam etching system. Ar and O2 mixed plasma at small incident angles have a high removal rate to the nonmagnetic material. It was utilised to etch the reference surface until it reaches the MT value. Low-energy Ar plasma at a small incident angle removes materials with selective ratios of 1 : 1.6 : 2.5 : 2.9 (AlTiC/Al2O3/NiCoFe/NiFe. It was selected to form the PTR. High-energy Ar plasma at a large incident angle exhibits almost same removal rates for all materials. It was adopted to make overall removal while keeping the recessed profile. An atomic force microscope (AFM was used for measuring the recessed heights of pole tip and the MT value of the base surface. A transmission electronic microscopy (TEM was chosen to examine the thickness of subsurface damage. A batch of production showed that the recessed heights can be successfully nanofabricated with the three-step plasma etching process.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12953

  2. Anisotropy of synthetic diamond in catalytic etching using iron powder

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junsha [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan); Wan, Long, E-mail: wanlong1799@163.com [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Chen, Jing [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Yan, Jiwang [Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan)

    2015-08-15

    Highlights: • Synthetic diamond crystallites were etched using iron without requiring hydrogen. • The effect of temperature on the etching behaviour was demonstrated. • The anisotropy of etching on different crystal planes was investigated. • The extent of etching on diamond surface was examined quantitatively. • A schematic model for diamond etching by iron is being proposed. - Abstract: This paper demonstrated a novel technique for catalytic etching of synthetic diamond crystallites using iron (Fe) powder without flowing gas. The effect of temperature on the etching behaviour on different crystal planes of diamond was investigated. The surface morphology and surface roughness of the processed diamond were examined by scanning electron microscope (SEM) and laser-probe surface profiling. In addition, the material composition of the Fe-treated diamond was characterized using micro-Raman spectroscopy and the distribution of chemical elements and structural changes on Fe-loaded diamond surfaces were analyzed by energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD), respectively. Results showed that at the same temperature the {1 0 0} plane was etched faster than the {1 1 1} plane, and that the etching rate of both {1 0 0} and {1 1 1} plane increased with temperature. The etch pits on {1 0 0} plane were reversed pyramid with flat {1 1 1} walls, while the etch holes on {1 1 1} plane were characterized with flat bottom. It was also demonstrated that graphitization of diamond and subsequent carbon diffusion in molten iron were two main factors resulting in the removal of carbon from the diamond surface.

  3. Replicated Spectrographs in Astronomy

    CERN Document Server

    Hill, Gary J

    2014-01-01

    As telescope apertures increase, the challenge of scaling spectrographic astronomical instruments becomes acute. The next generation of extremely large telescopes (ELTs) strain the availability of glass blanks for optics and engineering to provide sufficient mechanical stability. While breaking the relationship between telescope diameter and instrument pupil size by adaptive optics is a clear path for small fields of view, survey instruments exploiting multiplex advantages will be pressed to find cost-effective solutions. In this review we argue that exploiting the full potential of ELTs will require the barrier of the cost and engineering difficulty of monolithic instruments to be broken by the use of large-scale replication of spectrographs. The first steps in this direction have already been taken with the soon to be commissioned MUSE and VIRUS instruments for the Very Large Telescope and the Hobby-Eberly Telescope, respectively. MUSE employs 24 spectrograph channels, while VIRUS has 150 channels. We compa...

  4. SUMO and KSHV Replication

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Pei-Ching [Institute of Microbiology and Immunology, National Yang-Ming University, Taipei 112, Taiwan (China); Kung, Hsing-Jien, E-mail: hkung@nhri.org.tw [Institute for Translational Medicine, College of Medical Science and Technology, Taipei Medical University, Taipei 110, Taiwan (China); Department of Biochemistry and Molecular Medicine, University of California, Davis, CA 95616 (United States); UC Davis Cancer Center, University of California, Davis, CA 95616 (United States); Division of Molecular and Genomic Medicine, National Health Research Institutes, 35 Keyan Road, Zhunan, Miaoli County 35053, Taiwan (China)

    2014-09-29

    Small Ubiquitin-related MOdifier (SUMO) modification was initially identified as a reversible post-translational modification that affects the regulation of diverse cellular processes, including signal transduction, protein trafficking, chromosome segregation, and DNA repair. Increasing evidence suggests that the SUMO system also plays an important role in regulating chromatin organization and transcription. It is thus not surprising that double-stranded DNA viruses, such as Kaposi’s sarcoma-associated herpesvirus (KSHV), have exploited SUMO modification as a means of modulating viral chromatin remodeling during the latent-lytic switch. In addition, SUMO regulation allows the disassembly and assembly of promyelocytic leukemia protein-nuclear bodies (PML-NBs), an intrinsic antiviral host defense, during the viral replication cycle. Overcoming PML-NB-mediated cellular intrinsic immunity is essential to allow the initial transcription and replication of the herpesvirus genome after de novo infection. As a consequence, KSHV has evolved a way as to produce multiple SUMO regulatory viral proteins to modulate the cellular SUMO environment in a dynamic way during its life cycle. Remarkably, KSHV encodes one gene product (K-bZIP) with SUMO-ligase activities and one gene product (K-Rta) that exhibits SUMO-targeting ubiquitin ligase (STUbL) activity. In addition, at least two viral products are sumoylated that have functional importance. Furthermore, sumoylation can be modulated by other viral gene products, such as the viral protein kinase Orf36. Interference with the sumoylation of specific viral targets represents a potential therapeutic strategy when treating KSHV, as well as other oncogenic herpesviruses. Here, we summarize the different ways KSHV exploits and manipulates the cellular SUMO system and explore the multi-faceted functions of SUMO during KSHV’s life cycle and pathogenesis.

  5. Development and application of the electrochemical etching technique. Annual progress report

    Energy Technology Data Exchange (ETDEWEB)

    1980-08-01

    This annual progress report documents further advances in the development and application of electrochemical etching of polycarbonate foils (ECEPF) for fast, intermediate, and thermal neutron dosimetry as well as alpha particle dosimetry. The fast (> 1.1 MeV) and thermal neutron dosimetry techniques were applied to a thorough investigation of the neutron contamination inherent in and about the primary x-ray beam of several medical therapy electron accelerators. Because of the small size of ECEPF dosimeters in comparison to other neutron meters, they have an unusually low perturbation of the radiation field under measurement. Due to this small size and the increased sensitivity of the ECEPF dosimeter over current techniques of measuring neutrons in a high photon field, the fast neutron contamination in the primary x-ray beam of all the investigated accelerators was measured with precision and found to be greater than that suggested by the other, more common, neutron dosimetry methods.

  6. Electronegativity-dependent tin etching from thin films

    NARCIS (Netherlands)

    Pachecka, M.; Sturm, J.M.; Kruijs, van de R.W.E.; Lee, C.J.; Bijkerk, F.

    2016-01-01

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electron

  7. Orthodox etching of HVPE-grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  8. Microstructure, composition, and etching topography of dental ceramics.

    Science.gov (United States)

    Della Bona, Alvaro; Anusavice, Kenneth J

    2002-01-01

    Topographic analysis of etched ceramics provides qualitative surface structure information that affects micromechanical retention mechanisms. This study tested the hypothesis that the etching mechanism changes according to the type of etchant and the ceramic microstructure and composition. Quantitative and qualitative analyses of 15 dental ceramics were performed using scanning electron microscopy, back-scattered imaging, X-ray diffraction, optical profilometry, and wavelength dispersive spectroscopy based on Phi-Rho-Z correction. All ceramic specimens were polished to 1 micron with diamond compound, and the following etchants and etching times were used: ammonium bifluoride (ABF) for 1 minute, 9.6% hydrofluoric acid (HF) for 2 minutes, and 4% acidulated phosphate fluoride (APF) for 2 minutes. HF produced an irregular etching pattern in which pores were the characteristic topographic feature. ABF-etched ceramic surfaces showed mostly grooves, and APF etchant caused a buildup of surface precipitate. Core ceramics showed less topographic change after etching because of their high alumina content and low chemical reactivity. The observations suggest that the etching mechanism is different for the three etchants, with HF producing the most prominent etching pattern on all dental ceramics examined.

  9. Reactive ion etching of quartz and Pyrex for microelectronic applications

    Science.gov (United States)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  10. Versatile apparatus for etching scanning tunneling microscope tips

    Science.gov (United States)

    Fiering, J. O.; Ellis, F. M.

    1990-12-01

    We have developed an apparatus for easy and consistent etching of small tips suitable for use with a scanning tunneling microscope. Its unique features are free access to the etching region and a continuous supply of electrolyte for the production of many tips in succession.

  11. Etching efficiency of tracks differently oriented with respect to the symmetry axis of a crystal lattice of olivine monocrystals from Marjalahti pallasite

    Energy Technology Data Exchange (ETDEWEB)

    Bagulya, A.V.; Goncharova, L.A. [Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr., 53, Moscow 119991 (Russian Federation); Ivliev, A.I., E-mail: cosmo@geokhi.r [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, Kosygina str., 19, 119991 (Russian Federation); Kalinina, G.V., E-mail: ugeochem@geochem.home.chg.r [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, Kosygina str., 19, 119991 (Russian Federation); Kashkarov, L.L. [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, Kosygina str., 19, 119991 (Russian Federation); Konovalova, N.S.; Okat' eva, N.M. [Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr., 53, Moscow 119991 (Russian Federation); Polukhina, N.G., E-mail: poluhina@sci.lebedev.r [Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr., 53, Moscow 119991 (Russian Federation); Roussetski, A.S.; Starkov, N.I.; Tsarev, V.A. [Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr., 53, Moscow 119991 (Russian Federation); Vladymyrov, M.S., E-mail: neworld@itep.r [Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr., 53, Moscow 119991 (Russian Federation)

    2009-10-15

    The results of measurements of the major track parameters for tracks formed by the accelerated {sup 131}Xe (E = 1.5 GeV) nuclei in individual olivine grains from the Marjalahti pallasite are presented. For each of ten treated crystals, the structure and the main crystal lattice symmetry axis were determined by the X-ray diffraction analysis. The basic track parameters (etching rate V{sub TR} and etched length L) were shown to be independent of the angle between the monocrystal main symmetry axis for each examined crystal and the direction of the accelerated nucleus beam.

  12. Surface-etched distributed Bragg reflector lasers in photonic integrated circuits

    Science.gov (United States)

    Price, Raymond Kirk

    Semiconductor lasers have been used as a highly efficient, coherent source of light for commercial, industrial, and medical applications. Recently, much work has been done to engineer optical devices with a high degree of functionality. Photonic integrated circuits (PICs) achieve technology's twin goals of miniaturization and integration by implementing multiple optical functions on a single chip. This dissertation shows that asymmetric cladding surface-etched distributed Bragg reflector (ACSE-DBR) lasers are ideal candidates for monolithic photonic integration for the purpose of optical heterodyning. The active laser devices in these ACSE-DBR lasers exhibit high quantum efficiencies, tunable performance, and narrow spectral linewidths. The asymmetric cladding ridge waveguides are shown to provide low-loss routing structures, enabling monolithic integration of active and passive devices with a small layout footprint. This technology is applied to two specific purposes: a dual wavelength source for generating terahertz radiation via optical heterodyning, and high-power DBR laser arrays for spectral beam combining. A dual-wavelength PIC at 850 nm for the purpose of optical heterodyning is presented in this work. The engineering of the active and passive structures is extensively analyzed. These structures are shown to be ideally suited for high pulsed-power optical heterodyning applications. A high-power DBR laser array is also presented for use in spectral beam combining systems. The laser structure for this application is engineered for high-power applications. The engineering of the lateral optical guiding structure as well as the surface-etched grating is discussed.

  13. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  14. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  15. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1987-03-10

    A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ but less than E/sub g2/, whereby the first semiconductor material is photochemically etched and the second material is substantially not etched.

  16. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  17. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Ajay Kumar

    2014-02-01

    Full Text Available This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that the light transmission through etched fiber at 1550 nm wavelength optical source becomes highly temperature sensitive, compared to the temperature insensitive behavior observed in un-etched fiber for the range on 30ºC to 100ºC at 1550 nm. The sensor response under temperature cycling is repeatable and, proposed to be useful for low frequency analogue signal transmission over optical fiber by means of inline thermal modulation approach.

  18. Microsensors based on a whispering gallery mode in AlGaN microdisks undercut by hydrogen-environment thermal etching.

    Science.gov (United States)

    Kouno, Tetsuya; Sakai, Masaru; Takeshima, Hoshi; Suzuki, Sho; Kikuchi, Akihiko; Kishino, Katsumi; Hara, Kazuhiko

    2017-04-20

    AlGaN microdisks were fabricated via a top-down process using electron-beam lithography, inductively coupled plasma reactive-ion etching, and hydrogen-environment thermal etching from commercial epitaxial wafers with a 100-300 nm thick AlGaN layer grown on a c-plane GaN layer by metal-organic chemical vapor deposition. The hydrogen-environment thermal etching performed well in undercutting the AlGaN microdisks owing to the selective etching for the GaN layer. The AlGaN microdisks acted as the whispering gallery mode (WGM) optical microresonators, exhibiting sharp resonant peaks in room temperature photoluminescence spectra. The evanescent component of the whispering gallery mode (WGM) is influenced by the ambient condition of the microdisk, resulting in the shift of the resonant peaks. The phenomenon is considered to be used for microsensors. Using the WGM in the AlGaN microdisks, we demonstrated microsensors and a microsensor system, which can potentially be used to evaluate biological and chemical actions in a microscale area in real time.

  19. Many flaked particles generated by electric field stress working as an impulsive force in mass-production plasma etching equipment

    Science.gov (United States)

    Kasashima, Yuji; Uesugi, Fumihiko

    2015-09-01

    Particles generated in plasma etching significantly lower production yield. In plasma etching, etching reaction products adhere to the inner chamber walls, gradually forming films, and particles are generated by flaking of the deposited films due to electric field stress that acts boundary between the inner wall and the film. In this study, we have investigated the mechanism of instantaneous generation of many flaked particles using the mass-production reactive ion etching equipment. Particles, which flake off from the films on the ground electrode, are detected by the in-situ particle monitoring system using a sheet-shaped laser beam. The results indicate that the deposited films are severely damaged and flake off as numerous particles when the floating potential at the inner wall suddenly changes. This is because the rapid change in floating potential, observed when unusual wafer movement and micro-arc discharge occur, causes electric field stress working as an impulsive force. The films are easily detached by the impulsive force and many flaked particles are instantaneously generated. This mechanism can occur on not only a ground electrode but a chamber walls, and cause serious contamination in mass-production line. This work was partially supported by JSPS KAKENHI Grant Number B 26870903.

  20. Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

    Energy Technology Data Exchange (ETDEWEB)

    Szkudlarek, Aleksandra [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland); AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Szmyt, Wojciech; Kapusta, Czeslaw [AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Utke, Ivo [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland)

    2014-12-15

    In this work, we review the single-adsorbate time-dependent continuum model for focused electron beam-induced deposition (FEBID). The differential equation for the adsorption rate will be expressed by dimensionless parameters describing the contributions of adsorption, desorption, dissociation, and the surface diffusion of the precursor adsorbates. The contributions are individually presented in order to elucidate their influence during variations in the electron beam exposure time. The findings are condensed into three new scaling laws for pulsed exposure FEBID (or FEB-induced etching) relating the lateral resolution of deposits or etch pits to surface diffusion and electron beam exposure dwell time for a given adsorbate depletion state. (orig.)

  1. Efficient usage of Adabas replication

    CERN Document Server

    Storr, Dieter W

    2011-01-01

    In today's IT organization replication becomes more and more an essential technology. This makes Software AG's Event Replicator for Adabas an important part of your data processing. Setting the right parameters and establishing the best network communication, as well as selecting efficient target components, is essential for successfully implementing replication. This book provides comprehensive information and unique best-practice experience in the field of Event Replicator for Adabas. It also includes sample codes and configurations making your start very easy. It describes all components ne

  2. Solving the Telomere Replication Problem

    Science.gov (United States)

    Maestroni, Laetitia; Matmati, Samah; Coulon, Stéphane

    2017-01-01

    Telomeres are complex nucleoprotein structures that protect the extremities of linear chromosomes. Telomere replication is a major challenge because many obstacles to the progression of the replication fork are concentrated at the ends of the chromosomes. This is known as the telomere replication problem. In this article, different and new aspects of telomere replication, that can threaten the integrity of telomeres, will be reviewed. In particular, we will focus on the functions of shelterin and the replisome for the preservation of telomere integrity. PMID:28146113

  3. Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

    Science.gov (United States)

    Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

    2013-01-01

    Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

  4. Clinical effectiveness of self-etching adhesives with or without selective enamel etching in noncarious cervical lesions: A systematic review

    Directory of Open Access Journals (Sweden)

    Wei Qin

    2014-12-01

    Conclusion: Previous enamel etching resulted in fewer marginal defects and marginal discoloration, compared with using the SE approach alone. For restoration retention, the differences between the two groups were not significant. Additional longer follow ups and large-scale investigations are expected to assess possible advantages of selective enamel etching in NCCL restorations.

  5. Thermal neutron dosimetry using electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Su, S.J.; Sanders, M.E.; Morgan, K.Z.

    1979-07-10

    This study demonstrates the feasibility of using high LET particle radiators to determine the thermal neutron dose by reaction particle registration in low background polycarbonate foils using electrochemical etching. When used in conjunction with the already proven fast neutron recoil particle track registration technique, a viable fast and thermal neutron dosimeter is realized with the advantages of being: non-fading, insensitive to low LET radiation reactions, inexpensive in both processing and materials, useable over a wide dose range, a permanant record and good reproducibility, highly sensitive, and tissue equivalent and a dose equivalent response over a wide range. Most importantly, it finally provides a simple and reliable dosimeter for both the fast and thermal neutron components.

  6. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    Science.gov (United States)

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  7. Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method

    Energy Technology Data Exchange (ETDEWEB)

    Hajji, M., E-mail: mhajji2001@yahoo.fr [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia); Institut Supérieur d’Electronique et de Communication de Sfax, route Menzel Chaker Km 0.5, BP 868, Sfax 3018 (Tunisia); Khalifa, M.; Slama, S. Ben; Ezzaouia, H. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia)

    2013-11-01

    This paper presents a new method to produce porous silicon which derived from the conventional stain etching (SE) method. But instead of one etching step that leads to formation of porous layer, the substrate is subjected to an initial etching step with a duration Δt{sub 0} followed by a number of supplementary short steps that differs from a layer to another. The duration of the initial step is just the necessary time to have a homogenous porous layer on the whole surface of the substrate. It was found that this duration is largely dependent of the doping type and level of the silicon substrate. The duration of supplementary steps was kept as short as possible to prevent the formation of bubbles on the silicon surface during silicon dissolution which leads generally to inhomogeneous porous layers. It is found from surface investigation by atomic force microscopy (AFM) that multistep stain etching (MS-SE) method allows to produce homogeneous porous silicon nanostructures compared to the conventional SE method. The chemical composition of the obtained porous layers has been evaluated using Fourier transform infrared spectroscopy (FTIR). Photoluminescence (PL) measurement shows that porous layers produced by SE and MS-SE methods have comparable spectra indicating that those layers are composed of nanocrystallites with comparable sizes. But the intensity of photoluminescence of layer elaborated by MS-SE method is higher than that elaborated by the SE method. Total reflectance characteristics show that the presented method allows the production of porous silicon layers with controllable thicknesses and optical properties. Results for porous silicon layers elaborated on heavily doped n-type silicon show that the reflectance can be reduced to values less than 3% in the major part of the spectrum.

  8. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  9. Differences in accumulation and virulence determine the outcome of competition during Tobacco etch virus coinfection.

    Directory of Open Access Journals (Sweden)

    Guillaume Lafforgue

    Full Text Available Understanding the evolution of virulence for RNA viruses is essential for developing appropriate control strategies. Although it has been usually assumed that virulence is a consequence of within-host replication of the parasite, viral strains may be highly virulent without experiencing large accumulation as a consequence of immunopathological host responses. Using two strains of Tobacco etch potyvirus (TEV that show a negative relationship between virulence and accumulation rate, we first explored the evolution of virulence and fitness traits during simple and mixed infections. Short-term evolution experiments initiated with each strain independently confirmed the genetic and evolutionary stability of virulence and viral load, although infectivity significantly increased for both strains. Second, competition experiments between hypo- and hypervirulent TEV strains have shown that the outcome of competition is driven by differences in replication rate. A simple mathematical model has been developed to analyze the dynamics of these two strains during coinfection. The model qualitatively reproduced the experimental results using biologically meaningful parameters. Further analyses of the model also revealed a wide parametric region in which a low-fitness but hypovirulent virus can still outcompete a high-fitness but hypervirulent one. These results provide additional support to the observation that virulence and within-host replication may not necessarily be strongly tied in plant RNA viruses.

  10. Charter School Replication. Policy Guide

    Science.gov (United States)

    Rhim, Lauren Morando

    2009-01-01

    "Replication" is the practice of a single charter school board or management organization opening several more schools that are each based on the same school model. The most rapid strategy to increase the number of new high-quality charter schools available to children is to encourage the replication of existing quality schools. This policy guide…

  11. Patterned Platinum Etching Studies in an Argon High Density Plasma

    Science.gov (United States)

    Delprat, Sébastien; Chaker, Mohamed; Margot, Joëlle; Pépin, Henri; Tan, Liang; Smy, Tom

    1998-10-01

    A high-density surface-wave Ar plasma operated in the low pressure regime is used to study pure physical etching characteristics of platinum thin films. The platinum samples are RF biased so as to obtain a maximum DC self-bias voltage of 150 V. The sputter-etching characteristics are investigated as a function of the magnetic field intensity, the self-bias voltage and the gas pressure. At 1 mtorr, the etch rate is found to be a unique linear function of both the self-bias voltage and the ion density, independently of the magnetic field intensity value. However, even though the ion density increases, the etch rate is found to decrease with increasing pressure. In the low pressure regime, etch rates as high as 2000 A/min are obtained with a good selectivity over resist. Without any optimization of the etching process, we were able to etch 0.5 micron Pt trenches, 0.6 micron thick yielding fence-free profiles and sidewall angles (75º) that already meets the present industrial requirements of NVRAM technology.

  12. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h‑1) is in reasonable agreement with that detected in the experiments (24 µm · h‑1).

  13. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi...... of the change in free energy of adsorption, the Pourbaix diagram, the electrochemical double- layer thickness and silicon dopant type, and concentration. (C) 2004 The Electrochemical Society.......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...

  14. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  15. LHCb experience with LFC replication

    CERN Document Server

    Bonifazi, F; Perez, E D; D'Apice, A; dell'Agnello, L; Düllmann, D; Girone, M; Re, G L; Martelli, B; Peco, G; Ricci, P P; Sapunenko, V; Vagnoni, V; Vitlacil, D

    2008-01-01

    Database replication is a key topic in the framework of the LHC Computing Grid to allow processing of data in a distributed environment. In particular, the LHCb computing model relies on the LHC File Catalog, i.e. a database which stores information about files spread across the GRID, their logical names and the physical locations of all the replicas. The LHCb computing model requires the LFC to be replicated at Tier-1s. The LCG 3D project deals with the database replication issue and provides a replication service based on Oracle Streams technology. This paper describes the deployment of the LHC File Catalog replication to the INFN National Center for Telematics and Informatics (CNAF) and to other LHCb Tier-1 sites. We performed stress tests designed to evaluate any delay in the propagation of the streams and the scalability of the system. The tests show the robustness of the replica implementation with performance going much beyond the LHCb requirements.

  16. DATABASE REPLICATION IN HETEROGENOUS PLATFORM

    Directory of Open Access Journals (Sweden)

    Hendro Nindito

    2014-01-01

    Full Text Available The application of diverse database technologies in enterprises today is increasingly a common practice. To provide high availability and survavibality of real-time information, a database replication technology that has capability to replicate databases under heterogenous platforms is required. The purpose of this research is to find the technology with such capability. In this research, the data source is stored in MSSQL database server running on Windows. The data will be replicated to MySQL running on Linux as the destination. The method applied in this research is prototyping in which the processes of development and testing can be done interactively and repeatedly. The key result of this research is that the replication technology applied, which is called Oracle GoldenGate, can successfully manage to do its task in replicating data in real-time and heterogeneous platforms.

  17. LHCb experience with LFC replication

    CERN Document Server

    Carbone, Angelo; Dafonte Perez, Eva; D'Apice, Antimo; dell'Agnello, Luca; Duellmann, Dirk; Girone, Maria; Lo Re, Giuseppe; Martelli, Barbara; Peco, Gianluca; Ricci, Pier Paolo; Sapunenko, Vladimir; Vagnoni, Vincenzo; Vitlacil, Dejan

    2007-01-01

    Database replication is a key topic in the framework of the LHC Computing Grid to allow processing of data in a distributed environment. In particular, the LHCb computing model relies on the LHC File Catalog, i.e. database which stores information about files spread across the GRID, their logical names and the physical locations of all the replicas. The LHCb computing model requires the LFC to be replicated at Tier-1s. The LCG 3D project deals with the database replication issue and provides a replication service based on Oracle Streams technology. This paper describes the deployment of the LHC File Catalog replication to the INFN National Center for Telematics and Informations (CNAF) and to other LHCb Tier-1 sites. We performed stress tests designed to evaluate any delay in the propagation of the streams and the scalability of the system. The tests show the robustness of the replica implementation with performance going much beyond the LHCb requirements.

  18. The even device fabricated by the deep etched binary optics technology for the exposure system of the quasi-molecule laser

    Institute of Scientific and Technical Information of China (English)

    徐平; 孙一翎; 李景镇

    2002-01-01

    By applying the specific properties and the fabricating technology of the deep etched elements presented by us, the even device of deep etched binary optics has been designed and fabricated which can be used in quasi-molecule laser exposure system. This even device is light in weight, easy to adjust and has a high utilization rate of energy and is able to project well-distributed light beams. So it is better than the conventional one which was an array made up of quartz sticks. The properties and designed parameters were studied and simulated. The fabricated even was precisely tested by high precision Alpha-Steper. The testing result of the surface relief structures of the even has been profoundly analyzed by introducing "boundary errors". The theory agrees well with the results of the experiment. This is the first successful application of the deep etched theory and technology of binary optics to the exposure system of microfabrication.

  19. Sealing effectiveness of etch-and-rinse vs self-etching adhesives after water aging: influence of acid etching and NaOCl dentin pretreatment.

    Science.gov (United States)

    Monticelli, Francesca; Toledano, Manuel; Silva, Ana Simoes; Osorio, Estrella; Osorio, Raquel

    2008-06-01

    To determine the marginal leakage of Class V restorations bonded with etch-and-rinse and self-etching adhesives applied after different dentin pretreatments over a maximum storage time of 24 months. Standardized mixed Class V cavities (5 mm x 3 mm and 2 mm deep) were cut on the buccal and lingual surfaces of 180 human molars. Two self-etching adhesive systems, Adper Prompt L-Pop (3M ESPE) and Clearfil SE Bond (Kuraray), and one etch-and-rinse bonding agent (One Step, Bisco) were applied as follows: 1. according to manufacturers' instructions; 2. after 37% H3PO4 etching for 15 s; 3. after 37% H3PO4 etching for 15 s and 5% NaOCl aq application for 2 min. Teeth were stored for 24 h, 6, 12, and 24 months in saline solution at 37 degrees C before being stained in 0.5% solution of basic fuchsine. Dye penetration was scored on a 0 to 3 ordinal scale and analyzed with the Kruskal-Wallis H test (p < 0.05), Mann-Whitney U-test (p < 0.01), and Wilcoxon paired test (p < 0.05). Significant differences exist after using the tested adhesives at dentin and enamel margins. Adhesive type and substrate pretreatment had a significant effect on the long-term sealing of Class V restorations, and aging increased leakage overtime. The extent of leakage at the enamel margins was lower than that at dentin margins. One Step recorded the best results after 24 months. Optimal adhesion of restorative materials to enamel and dentin is hampered by a reduction in marginal seal over time. Alternative dentinal treatments (etching or collagen removal) might increase bonding efficacy, depending on the adhesive system used.

  20. Preliminary Study of Polymer Removal in 0.25, 0.3, and 0.5 μm Ruthenium Storage Nodes and 0.11 μm, 10.9:1 High-Aspect-Ratio Trenches by Laser-Induced Etching

    Science.gov (United States)

    Kim, Yong-Gi; Cha, Byung Heon

    2005-07-01

    The demands for new etching technology are increasing because of new materials, such as, ruthenium (Ru), platinum (Pt), and iridium (Ir), that are now being used, and the strict critical dimension (C/D) controls required in today’s ultra large scale integrated (ULSI) circuit technology and dynamic random-access memory (DRAM) fabrication lines. Laser etching technology successfully etched organometallic polymers generated after reactive ion etching and ash processing in 0.25, 0.3, and 0.5 μm Ru storage nodes. In this study, the effects of the incident beam profile on the laser-induced etching of the polymers are investigated. Unevenness of the peak energy in the Gaussian beam profile creates unequal etching and heating effects on the polymer removal depending on the irradiating position of the line beam profile on the sample surface. This article discusses for the first time the preliminary results of laser-induced etching with a KrF laser to remove photoresist (PR) and polymer in 0.11 μm deep contact holes with a high-aspect-ratio 10.9:1 trench hole. How deep can the laser etching technology penetrate and strip the PR at a high aspect ratio (A/R) of 10.9:1 and a 0.11 μm hole size? The penetration depth for the PR removal was approximately 1 μm, which is about a 9.1:1 A/R in a 0.11 μm hole with a 1.2-μm-deep trench. Several promising points are discussed on the basis of laser etching in such a high A/R and small 0.11 μm contact hole. Laser-induced etching technology enabled a very uniform penetration depth without any fluctuations, and it also did not show any attack on the edge of the barrier material TiN.

  1. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  2. Parametric study on the solderability of etched PWB copper

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Stevenson, J.O.; Hernandez, C.L.

    1996-10-01

    The rapid advancement of interconnect technology has resulted in a more engineered approach to designing and fabricating printed wiring board (PWB) surface features. Recent research at Sandia National Laboratories has demonstrated the importance of surface roughness on solder flow. This paper describes how chemical etching was used to enhance the solderability of surfaces that were normally difficult to wet. The effects of circuit geometry, etch concentration, and etching time on solder flow are discussed. Surface roughness and solder flow data are presented. The results clearly demonstrate the importance of surface roughness on the solderability of fine PWB surface mount features.

  3. NACSA Charter School Replication Guide: The Spectrum of Replication Options. Authorizing Matters. Replication Brief 1

    Science.gov (United States)

    O'Neill, Paul

    2010-01-01

    One of the most important and high-profile issues in public education reform today is the replication of successful public charter school programs. With more than 5,000 failing public schools in the United States, there is a tremendous need for strong alternatives for parents and students. Replicating successful charter school models is an…

  4. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  5. The role of etching in bonding to enamel: a comparison of self-etching and etch-and-rinse adhesive systems.

    Science.gov (United States)

    Erickson, Robert L; Barkmeier, Wayne W; Latta, Mark A

    2009-11-01

    Etch and resin infiltration morphologies were compared for three self-etch adhesive (SEA) systems and eleven model etch-and-rinse (ERA) systems using various phosphoric acid (PA) concentrations with Adper Single Bond Plus (SB) adhesive. Matches for the morphologies were made between each SEA system and one of the PA/SB systems and bond strength measurements were made for all the systems. The hypothesis was that similar morphology would result in similar bond strength assuming micro-mechanical bonding is the mechanism of adhesion. Three specimens were prepared on polished (4000 grit) human enamel for each adhesive system to examine etch and resin infiltration morphology by SEM. For the latter, the adhesive systems were bonded using recommended methods and the enamel was dissolved in acid to reveal the resin. The etch patterns for the SEA systems were determined by rinsing off the material with water and acetone. Polished (4000 grit) human enamel was used with each adhesive system to determine 24-h resin composite to enamel shear bond strengths (SBS). A minimum of 10 specimens were used for each group. Data were analyzed by a one factor ANOVA and Fisher's PLSD post hoc test. The SBS to polished enamel for two of the three SEA systems were statistically significantly greater (penamel.

  6. 多层等离子体蚀刻技术的研究%Novel Technique for Multi-Partitioned Plasma Etching

    Institute of Scientific and Technical Information of China (English)

    于斌斌; 袁军堂; 汪振华; 薛志松; 黄云林

    2013-01-01

    A novel technique, tnulti-partitioned plasma etching, was developed to simultaneously etch GaN wafers with reactive ion beams in the multi-partitioned reactor. In the newly-developed technique, the vacuum chamber was divided into multiple partitions (three or more partitions) ,each of which acts as a separate plasma etching unit, with its own gas inlet,sample holder,and electrodes.The etching capacity was considerably scaled up.The photo-resist was dry etched with the lab-built,multi-partition etching setup.The impacts of the etching conditions,including the pressure,geometry of the partition, ratio of oxygen and argon flow rates, etc. on the etching rate were experimentally evaluated. The results show the average etching rate and uniformity can be up to 14.395 nm/min and 9.8% ,respectively,under the optimized condi-tions:a pressure of 40 Pa,a RF power of 600 W,an O2/Ar ratio of 1/2;a continuous etching time of 20 min in the three partitions with the bottom-up separations of 50,55 and 60 mm.%干法刻蚀现已成为微小高深宽比结构加工与微细图形制作的重要手段.提出了一种新的干法刻蚀技术一多层等离子体蚀刻,充分利用腔体的空间布局,布置多层电极,并采用分层送气装置输送放电气体,实现多层同时进行刻蚀,可成倍提高产能.采用该技术刻蚀光阻为例,从空间与时间两个角度分析了工艺参数对刻蚀速率与均匀性的影响规律与作用机理.实验结果表明,极板间距为50/55/60mm(由下向上),工作压力为40Pa,R[O2:Ar]为1/2,RF功率为600W时,整炉次刻蚀速率均值为14.395nm/min,均匀性为9.8%,此时工艺最为合理.

  7. International Expansion through Flexible Replication

    DEFF Research Database (Denmark)

    Jonsson, Anna; Foss, Nicolai Juul

    2011-01-01

    to local environments and under the impact of new learning. To illuminate these issues, we draw on a longitudinal in-depth study of Swedish home furnishing giant IKEA, involving more than 70 interviews. We find that IKEA has developed organizational mechanisms that support an ongoing learning process aimed......, etc.) are replicated in a uniform manner across stores, and change only very slowly (if at all) in response to learning (“flexible replication”). We conclude by discussing the factors that influence the approach to replication adopted by an international replicator....

  8. Erbium doped stain etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Diaz-Herrera, B. [Departamento de Energia Fotovoltaica, Instituto Tecnologico de Energias Renovables (ITER), Poligono Industrial de Granadilla, 38611 S/C Tenerife (Spain); Guerrero-Lemus, R. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain)], E-mail: rglemus@ull.es; Mendez-Ramos, J.; Rodriguez, V.D. [Departamento de Fisica Fundamental, Experimental Electronica y Sistemas, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-Rodriguez, C. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Martinez-Duart, J.M. [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Cantoblanco, Madrid (Spain)

    2008-01-15

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO{sub 3} solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er{sup 3+} ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy.

  9. Marginal permeability of self-etch and total-etch adhesive systems.

    Science.gov (United States)

    Owens, Barry M; Johnson, William W; Harris, Edward F

    2006-01-01

    This study evaluated microleakage in vitro of self-etch and multi-step, total-etch adhesive systems. Ninety-six extracted non-carious human molars were randomly assigned to eight groups (n=12) and restored with different adhesive systems: Optibond Solo Plus, iBond, Adper Prompt L-Pop, Xeno III, Simplicity, Nano-Bond, Adper Scotchbond Multi-Purpose and Touch & Bond. Each group was treated following the manufacturer's instructions. Class V cavities were prepared on the facial or lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (dentin). The teeth were restored with Z-100 resin composite. After polishing with Sof-Lex disks, the teeth were thermocycled for 1000 cycles and coated with nail varnish to within 1.0 mm of the restoration. The teeth were stained in 1% methylene blue dye for 24 hours and sectioned from the facial to lingual surface. Dye penetration (microleakage) was examined with a 20x binocular microscope. Enamel and dentin margin leakage was scored on a 0 to 3 ordinal scale. Data were analyzed using Kruskal-Wallis Analysis of Variance and Mann-Whitney U tests. Comparison of the adhesive groups at the enamel margin revealed: 1) Adper Scotchbond Multi-Purpose exhibited significantly less leakage than the other adhesive groups (except iBond); 2) among the self-etch adhesive groups, iBond exhibited significantly less leakage than Nano-Bond and 3) the other adhesive groups clustered intermediately. In contrast, there were no significant differences among the adhesive groups when the dentin margin was evaluated. A Wilcoxin signed rank test showed significantly less leakage at the enamel margins compared to the dentin margins of the eight adhesive systems tested. All data were submitted to statistical analysis at p<0.05 level of significance.

  10. Effect of postoperative bleaching on microleakage of etch-and-rinse and self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Vajihesadat Mortazavi

    2011-01-01

    Full Text Available Background: Bleaching the discoloured teeth may affect the tooth/composite interface. The aim of this in vitro experimental study was to evaluate the effect of vital tooth bleaching on microleakage of existent class V composite resin restorations bonded with three dental bonding agents. Methods : Class V cavities were prepared on buccal surfaces of 72 intact, extracted human anterior teeth with gingival margins in dentin and occlusal margins in enamel, and randomly divided into 3 groups. Cavities in the three groups were treated with Scotch bond Multi-Purpose, a total etch system and Prompt L-Pop and iBond, two self-etch adhesives. All teeth were restored with Z250 resin composite material and thermo-cycled. Each group was equally divided into the control and the bleached subgroups (n = 12. The bleached subgroups were bleached with 15% carbamide peroxide gel for 8 hours a day for 15 days. Microleakage scores were evaluated on the incisal and cervical walls. Data were analyzed using Kruskal-Wallis, Mann-Whitney and Bonferroni post-hoc tests (α = 0.05. Results: Bleaching with carbamide peroxide gel significantly increased the microleakage of composite restorations in Prompt L-Pop group at dentinal walls (P = 0.001. Bleaching had no effect on microleakage of restorations in the Scotch bond Multi-Purpose and iBond groups. Conclusion: Vital tooth bleaching with carbamide peroxide gel has an adverse effect on marginal seal of dentinal walls of existent composite resin restorations bonded with prompt L-Pop self-etch adhesive.

  11. The Psychology of Replication and Replication in Psychology.

    Science.gov (United States)

    Francis, Gregory

    2012-11-01

    Like other scientists, psychologists believe experimental replication to be the final arbiter for determining the validity of an empirical finding. Reports in psychology journals often attempt to prove the validity of a hypothesis or theory with multiple experiments that replicate a finding. Unfortunately, these efforts are sometimes misguided because in a field like experimental psychology, ever more successful replication does not necessarily ensure the validity of an empirical finding. When psychological experiments are analyzed with statistics, the rules of probability dictate that random samples should sometimes be selected that do not reject the null hypothesis, even if an effect is real. As a result, it is possible for a set of experiments to have too many successful replications. When there are too many successful replications for a given set of experiments, a skeptical scientist should be suspicious that null or negative findings have been suppressed, the experiments were run improperly, or the experiments were analyzed improperly. This article describes the implications of this observation and demonstrates how to test for too much successful replication by using a set of experiments from a recent research paper.

  12. Regulation of Replication Recovery and Genome Integrity

    DEFF Research Database (Denmark)

    Colding, Camilla Skettrup

    Preserving genome integrity is essential for cell survival. To this end, mechanisms that supervise DNA replication and respond to replication perturbations have evolved. One such mechanism is the replication checkpoint, which responds to DNA replication stress and acts to ensure replication pausing...

  13. Polishing of quartz by rapid etching in ammonium bifluoride.

    Science.gov (United States)

    Vallin, Orjan; Danielsson, Rolf; Lindberg, Ulf; Thornell, Greger

    2007-07-01

    The etch rate and surface roughness of polished and lapped AT-cut quartz subjected to hot (90, 110, and 130 degrees C), concentrated (50, 65, 80 wt %) ammonium bi-fluoride have been investigated. Having used principal component analysis to verify experimental solidity and analyze data, we claim with confidence that this parameter space does not, as elsewhere stated, allow for a polishing effect or even a preserving setting. Etch rates were found to correlate well, and possibly logarithmically, with temperature except for the hottest etching applied to lapped material. Roughness as a function of temperature and concentration behaved well for the lapped material, but lacked systematic variation in the case of the polished material. At the lowest temperature, concentration had no effect on etch rate or roughness. Future efforts are targeted at temperatures and concentrations closer to the solubility limit.

  14. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  15. Cryogenic rf test of the first plasma etched SRF cavity

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Im, D; Phillips, L; Vušković, L

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  16. What's new in dentine bonding? Self-etch adhesives.

    Science.gov (United States)

    Burke, F J Trevor

    2004-12-01

    Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

  17. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  18. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray) an

  19. A survey on the reactive ion etching of silicon in microtechnology

    NARCIS (Netherlands)

    Jansen, Henricus V.; Gardeniers, Johannes G.E.; de Boer, Meint J.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system

  20. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

  1. Etching zircon age standards for fission-track analysis

    Energy Technology Data Exchange (ETDEWEB)

    Garver, J.I. E-mail: garverj@union.edu

    2003-02-01

    Nineteen laboratories that routinely measure fission-track ages in zircon were surveyed as to their principal methodology used for track revelation using chemical attack and counting procedures. The survey results show the following: (a) researchers in most labs count fission tracks with a optical microscope using at a total magnification between 1250x and 1600x ({approx}80%) with about an equal number using either a dry or oil objective (b) the majority of laboratories etch zircon with a KOH:NaOH eutectic heated in an oven between temperatures of 210 deg. C and 230 deg. C; (c) ag standards in zircon analysis do not have uniformly accepted etch times. Etching times for the widely used 28 Ma Fish Canyon Tuff (FCT) (4-60 h) and the lesser-used 16 Ma Buluk Tuff (13-55 h) vary significantly from lab to lab. Between {approx}220 deg. C and 230 deg. C, the principal range fo etching times for the FCT is between 20 and 30 h, and the mode for the Buluk Tuff is between 30 and 55 h. Three or fewer labs report etching times for the Tardee Rhyolite (22-40 h), the Bishop Tuff (10-46 h), and the Mt. Dromedary Banite (5-24 h). Variation in etching times may result in a bias in U-content which affects counting statistics. If etching is successful, strict criteria must be followed to ensure that the analyst only counts well-etched grains and that all tracks are successfully identified.

  2. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  3. Dry etching of single crystal PMN-PT piezoelectric material.

    OpenAIRE

    Agnus, Joël; Alexandru Ivan, Ioan; Queste, Samuel

    2011-01-01

    International audience; During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren't fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.

  4. Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

    Science.gov (United States)

    Miura, Yutaka; Kasahara, Yu; Habuka, Hitoshi; Takechi, Naoto; Fukae, Katsuya

    2009-02-01

    The etching rate behavior of silicon dioxide (SiO2, fused silica) using chlorine trifluoride (ClF3) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol-1, and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

  5. Low damage dry etch for III-nitride light emitters

    Science.gov (United States)

    Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

    2015-08-01

    We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

  6. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  7. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Science.gov (United States)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal catalyst crystallographic structure.

  8. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  9. Actin-myosin interactions visualized by the quick-freeze, deep-etch replica technique.

    Science.gov (United States)

    Heuser, J E; Cooke, R

    1983-09-05

    A new method of preparing biological samples for electron microscopy has been used to re-examine the structure of actin filaments, actin filaments decorated by myosin subfragment-1 (S1), and insect flight muscles. Samples were quick-frozen by contact with a block of copper cooled to approximately 4 K; then were freeze-fractured, deep-etched, rotary-replicated with platinum, and viewed in a transmission electron microscope. By this approach, actin filaments display prominent transverse bands whose repeat (approximately 5.5 nm) and pitch (approximately 15 to 20 degrees) fit with the expected left-handed "genetic" helix. Freeze-etched actin filaments do not, however, display the usual two-start helix as prominently as is seen after negative staining, and they also appear substantially thicker than after negative staining (9 to 10 nm versus 8 nm). The latter two-start helix appears very clearly after S1 decoration. Nevertheless, freeze-etched acto-S1 does not display the "arrowheads" that are seen after negative staining. Instead it displays the outer envelope of the helically deployed S1, and as would be expected from current models derived from optical reconstruction of negatively stained samples, this surface view looks only slightly polarized. Finally, the quick-freeze, deep-etch approach provides particularly distinct images of the crossbridges in insect flight muscles. These are plentiful and regularly arranged in rigor muscles, but rare in muscles relaxed with ATP before freezing. In rigor muscles fixed with aldehydes, these crossbridges assume a broad distribution of inclination, ranging from 45 degrees to 90 degrees with a mean of approximately 80 degrees, which is less tilt than has been seen before in thin-sectioned muscles. However, when aldehyde fixation is followed by exposure to tannic acid with or without uranyl acetate block-staining, crossbridges assume a more acute angle with respect to the fiber axis, centering around 45 degrees. This is associated

  10. Tailoring reflection of graphene plasmons by focused ion beams

    CERN Document Server

    Luo, Weiwei; Wu, Wei; Xiang, Yinxiao; Ren, Mengxin; Zhang, Xinzheng; Xu, Jingjun

    2016-01-01

    Graphene plasmons are of remarkable features that make graphene plasmon elements promising for applications to integrated photonic devices. The fabrication of graphene plasmon components and control over plasmon propagating are of fundamental important. Through near-field plasmon imaging, we demonstrate controllable modifying of the reflection of graphene plasmon at boundaries etched by ion beams. Moreover, by varying ion dose at a proper value, nature like reflection boundary can be obtained. We also investigate the influence of ion beam incident angle on plasmon reflection. To illustrate the application of ion beam etching, a simple graphene wedge-shape plasmon structure is fabricated and performs excellently, proving this technology as a simple and efficient tool for controlling graphene plasmons.

  11. Biomarkers of replicative senescence revisited

    DEFF Research Database (Denmark)

    Nehlin, Jan

    2016-01-01

    Biomarkers of replicative senescence can be defined as those ultrastructural and physiological variations as well as molecules whose changes in expression, activity or function correlate with aging, as a result of the gradual exhaustion of replicative potential and a state of permanent cell cycle...... with their chronological age and present health status, help define their current rate of aging and contribute to establish personalized therapy plans to reduce, counteract or even avoid the appearance of aging biomarkers....

  12. Self-etch primers and conventional acid-etch technique for orthodontic bonding: a systematic review and meta-analysis.

    Science.gov (United States)

    Fleming, Padhraig S; Johal, Ama; Pandis, Nikolaos

    2012-07-01

    The use of self-etch primers has increased steadily because of their time savings and greater simplicity; however, overall benefits and potential disadvantages and harms have not been assessed systematically. In this study, we reviewed randomized controlled trials to assess the risk of attachment failure, bonding time, and demineralization adjacent to attachments between 1-stage (self-etch) and 2-stage (acid etch) bonding in orthodontic patients over a minimum follow-up period of 12 months. Data sources were electronic databases including MEDLINE, EMBASE, the Cochrane Oral Health Group's Trials Register, and CENTRAL, without language restrictions. Unpublished literature was searched on ClinicalTrials.gov, the National Research Register, and Pro-Quest Dissertation Abstracts and Thesis database. Authors were contacted when necessary, and reference lists of the included studies were screened. Search terms included randomized controlled trial, controlled clinical trial, random allocation, double-blind method, single-blind method, orthodontics, self-etch, SEP, primer, and bonding agent. Randomized clinical trials directly comparing self-etch and acid-etch primers with respect to the predefined outcomes and including patients with full-arch, fixed, and bonded orthodontic appliances (not banded) with follow-up periods of at least 12 months were included. Using predefined forms, 2 authors undertook independent data extraction with conflict resolution by the third author. Randomized clinical trial quality assessment based on the Cochrane Risk of Bias tool was also used. Eleven studies met the inclusion criteria; 6 were excluded because of a high risk of bias. In total, 1721 brackets bonded with acid-etch and 1723 with self-etch primer techniques were included in the quantitative synthesis. Relatively low statistical and clinical heterogeneity was observed among the 5 randomized clinical trials (n = 3444 brackets) comparing acid-etch with self-etch primers. A random effects

  13. Nucleotide Metabolism and DNA Replication.

    Science.gov (United States)

    Warner, Digby F; Evans, Joanna C; Mizrahi, Valerie

    2014-10-01

    The development and application of a highly versatile suite of tools for mycobacterial genetics, coupled with widespread use of "omics" approaches to elucidate the structure, function, and regulation of mycobacterial proteins, has led to spectacular advances in our understanding of the metabolism and physiology of mycobacteria. In this article, we provide an update on nucleotide metabolism and DNA replication in mycobacteria, highlighting key findings from the past 10 to 15 years. In the first section, we focus on nucleotide metabolism, ranging from the biosynthesis, salvage, and interconversion of purine and pyrimidine ribonucleotides to the formation of deoxyribonucleotides. The second part of the article is devoted to DNA replication, with a focus on replication initiation and elongation, as well as DNA unwinding. We provide an overview of replication fidelity and mutation rates in mycobacteria and summarize evidence suggesting that DNA replication occurs during states of low metabolic activity, and conclude by suggesting directions for future research to address key outstanding questions. Although this article focuses primarily on observations from Mycobacterium tuberculosis, it is interspersed, where appropriate, with insights from, and comparisons with, other mycobacterial species as well as better characterized bacterial models such as Escherichia coli. Finally, a common theme underlying almost all studies of mycobacterial metabolism is the potential to identify and validate functions or pathways that can be exploited for tuberculosis drug discovery. In this context, we have specifically highlighted those processes in mycobacterial DNA replication that might satisfy this critical requirement.

  14. Plasmid Rolling-Circle Replication.

    Science.gov (United States)

    Ruiz-Masó, J A; MachóN, C; Bordanaba-Ruiseco, L; Espinosa, M; Coll, M; Del Solar, G

    2015-02-01

    Plasmids are DNA entities that undergo controlled replication independent of the chromosomal DNA, a crucial step that guarantees the prevalence of the plasmid in its host. DNA replication has to cope with the incapacity of the DNA polymerases to start de novo DNA synthesis, and different replication mechanisms offer diverse solutions to this problem. Rolling-circle replication (RCR) is a mechanism adopted by certain plasmids, among other genetic elements, that represents one of the simplest initiation strategies, that is, the nicking by a replication initiator protein on one parental strand to generate the primer for leading-strand initiation and a single priming site for lagging-strand synthesis. All RCR plasmid genomes consist of a number of basic elements: leading strand initiation and control, lagging strand origin, phenotypic determinants, and mobilization, generally in that order of frequency. RCR has been mainly characterized in Gram-positive bacterial plasmids, although it has also been described in Gram-negative bacterial or archaeal plasmids. Here we aim to provide an overview of the RCR plasmids' lifestyle, with emphasis on their characteristic traits, promiscuity, stability, utility as vectors, etc. While RCR is one of the best-characterized plasmid replication mechanisms, there are still many questions left unanswered, which will be pointed out along the way in this review.

  15. Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

    OpenAIRE

    Prado,Mariana C.; Jariwala, Deep; Marks, Tobin J.; Hersam, Mark C.

    2013-01-01

    Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing ...

  16. Adhesive capability of total-etch, self-etch, and self-adhesive systems for fiber post cementation

    Science.gov (United States)

    Theodor, Y.; Koesmaningati, H.; Gita, F.

    2017-08-01

    The aim of this study was to analyze whether self-etch and self-adhesive systems are comparable to the total-etch system for fiber post cementation. This experimental laboratory study, which was approved by an ethics committee, was performed using 27 mandibular premolar teeth randomly divided into three groups. Fiber post cementation was done using three different adhesive systems. Specimens were prepared with a thickness of 5 mm, which was measured from the cervical to medial areas of the root, and stored for 24 h in saline solution at room temperature. A push-out test was performed using a universal testing machine (Shimidzu AG-5000E) with a crosshead speed of 0.5 mm/min. The results of one way ANOVA bivariate testing showed that the total-etch and self-etch systems have comparable adhesion capability (padhesive system has the lowest adhesion capability (p>0.05). With easier application, the self-etch system has a comparable adhesion capability to the total-etch system.

  17. Beam loading

    CERN Document Server

    Gamp, Alexander

    2013-01-01

    We begin by giving a description of the radio-frequency generator-cavity-beam coupled system in terms of basic quantities. Taking beam loading and cavity detuning into account, expressions for the cavity impedance as seen by the generator and as seen by the beam are derived. Subsequently methods of beam-loading compensation by cavity detuning, radio-frequency feedback and feedforward are described. Examples of digital radio-frequency phase and amplitude control for the special case of superconducting cavities are also given. Finally, a dedicated phase loop for damping synchrotron oscillations is discussed.

  18. Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs

    Science.gov (United States)

    Heyn, Christian; Zocher, Michel; Schnüll, Sandra; Hansen, Wolfgang

    2016-09-01

    Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal. The present work demonstrates that the As background can be supplied by both a small As flux to the surface as well as by the topmost As layer in an As-terminated surface reconstruction acting as a reservoir. We study the temperature-dependent evaporation of the As topmost layer with in situ electron diffraction and determine an activation energy of 2.49 eV. After thermal removal of the As topmost layer droplet etching is studied under well-defined As supply. We observe with decreasing As flux four regimes: planar growth, uniform nanoholes, non-uniform holes, and droplet conservation. The influence of the As supply is discussed quantitatively on the basis of a kinetic rate model.

  19. Modification of a neuronal network direction using stepwise photo-thermal etching of an agarose architecture

    Directory of Open Access Journals (Sweden)

    Jimbo Yasuhiko

    2004-07-01

    Full Text Available Abstract Control over spatial distribution of individual neurons and the pattern of neural network provides an important tool for studying information processing pathways during neural network formation. Moreover, the knowledge of the direction of synaptic connections between cells in each neural network can provide detailed information on the relationship between the forward and feedback signaling. We have developed a method for topographical control of the direction of synaptic connections within a living neuronal network using a new type of individual-cell-based on-chip cell-cultivation system with an agarose microchamber array (AMCA. The advantages of this system include the possibility to control positions and number of cultured cells as well as flexible control of the direction of elongation of axons through stepwise melting of narrow grooves. Such micrometer-order microchannels are obtained by photo-thermal etching of agarose where a portion of the gel is melted with a 1064-nm infrared laser beam. Using this system, we created neural network from individual Rat hippocampal cells. We were able to control elongation of individual axons during cultivation (from cells contained within the AMCA by non-destructive stepwise photo-thermal etching. We have demonstrated the potential of our on-chip AMCA cell cultivation system for the controlled development of individual cell-based neural networks.

  20. Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

    Science.gov (United States)

    Ksendzov, A.; Fathauer, R. W.; George, T.; Pike, W. T.; Vasquez, R. P.; Taylor, A. P.

    1993-01-01

    We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

  1. Combined AFM nano-machining and reactive ion etching to fabricate high aspect ratio structures.

    Science.gov (United States)

    Peng, Ping; Shi, Tielin; Liao, Guanglan; Tang, Zirong

    2010-11-01

    In this paper, a new combined method of sub-micron high aspect ratio structure fabrication is developed which can be used for production of nano imprint template. The process includes atomic force microscope (AFM) scratch nano-machining and reactive ion etching (RIE) fabrication. First, 40 nm aluminum film was deposited on the silicon substrate by magnetron sputtering, and then sub-micron grooves were fabricated on the aluminum film by nano scratch using AFM diamond tip. As aluminum film is a good mask for etching silicon, high aspect ratio structures were finally fabricated by RIE process. The fabricated structures were studied by SEM, which shows that the grooves are about 400 nm in width and 5 microm in depth. To obtain sub-micron scale groove structures on the aluminum film, experiments of nanomachining on aluminum films under various machining conditions were conducted. The depths of the grooves fabricated using different scratch loads were also studied by the AFM. The result shows that the material properties of the film/substrate are elastic-plastic following nearly a bilinear law with isotropic strain hardening. Combined AFM nanomachining and RIE process provides a relative lower cost nano fabrication technique than traditional e-beam lithography, and it has a good prospect in nano imprint template fabrication.

  2. Observation of thermally etched grain boundaries with the FIB/TEM technique

    Energy Technology Data Exchange (ETDEWEB)

    Palizdar, Y., E-mail: y.palizdar@merc.ac.ir [Nanotechnology and advanced materials department, Materials and energy research centre (MERC), Karaj (Iran, Islamic Republic of); San Martin, D. [MATERALIA group, Department of Physical Metallurgy, (CENIM-CSIC), Centro Nacional de Investigaciones Metalúrgicas Av. Gregorio del Amo 8, 28040 Madrid (Spain); Ward, M.; Cochrane, R.C.; Brydson, R.; Scott, A.J. [Institute for Materials Research, SPEME, University of Leeds, Leeds LS2 9JT (United Kingdom)

    2013-10-15

    Thermal etching is a method which is able to reveal and characterize grain boundaries, twins or dislocation structures and determine parameters such as grain boundary energies, surface diffusivities or study phase transformations in steels, intermetallics or ceramic materials. This method relies on the preferential transfer of matter away from grain boundaries on a polished sample during heating at high temperatures in an inert/vacuum atmosphere. The evaporation/diffusion of atoms at high temperatures results in the formation of grooves at the intersections of the planes of grain/twin boundaries with the polished surface. This work describes how the combined use of Focussed Ion Beam and Transmission Electron Microscopy can be used to characterize not only the grooves and their profile with the surface, but also the grain boundary line below the groove, this method being complementary to the commonly used scanning probe techniques. - Highlights: • Thermally etched low-carbon steel samples have been characterized by FIB/TEM • Grain boundary (GB) lines below the groove have been characterized in this way • Absence of ghost traces and large θ angle suggests that GB are not stationary but mobile • Observations correlate well with previous works and Mullins' investigations [22].

  3. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    Science.gov (United States)

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

  4. Chemical etching to dissolve dislocation cores in multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gregori, N.J. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Murphy, J.D., E-mail: john.murphy@materials.ox.ac.uk [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Sykes, J.M.; Wilshaw, P.R. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom)

    2012-08-01

    Multicrystalline silicon wafers are used for approximately half of all solar cells produced at present. These wafers typically have dislocation densities of up to {approx}10{sup 6} cm{sup -2}. Dislocations and associated impurities act as strong recombination centres for electron-hole pairs and are one of the major limiting factors in multicrystalline silicon substrate performance. In this work we have explored the possibility of using chemical methods to etch out the cores of dislocations from mc-Si wafers. We aim to maximise the aspect ratio of the depth of the etched structure to its diameter. We first investigate the Secco etch (1K{sub 2}Cr{sub 2}O{sub 7} (0.15 M): 2HF (49%)) as a function of time and temperature. This etch removes material from dislocation cores much faster than grain boundaries or the bulk, and produces tubular holes at dislocations. Aspect ratios of up to {approx}7:1 are achieved for {approx}15 {mu}m deep tubes. The aspect ratio decreases with tube depth and for {approx}40 {mu}m deep tubes is just {approx}2:1, which is not suitable for use in bulk multicrystalline silicon photovoltaics. We have also investigated a range of etches based on weaker oxidising agents. An etch comprising 1I{sub 2} (0.01 M): 2HF (49%) attacked dislocation cores, but its etching behaviour was extremely slow (<0.1 {mu}m/h) and the pits produced had a low aspect ratio (<2:1).

  5. Range and etching behaviour of swift heavy ions in polymers

    Science.gov (United States)

    Singh, Lakhwant; Singh, Mohan; Samra, Kawaljeet Singh; Singh, Ravinder

    Aliphatic (CR-39) and aromatic (Lexan polycarbonate) polymers have been irradiated with a variety of heavy ions such as 58Ni, 93Nb, 132Xe, 139La, 197Au, 208Pb, 209Bi, and 238U having energy ranges of 5.60-8.00 MeV/n in order to study the range and etching kinetics of heavy ion tracksE The ion fluence (range ˜104-105 ions/cm2) was kept low to avoid the overlapping of etched tracks. The measured values of maximum etched track length were corrected due to bulk etching and over etching to obtain the actual range. The experimental results of range profiles were compared with those obtained by the most used procedures employed in obtaining range and stopping power. The range values of present ions have been computed using the semiempirical codes (SRIM-98, SRIM-2003.26, and LISE++:0-[Hub90]) in order to check their accuracy. The merits and demerits of the adopted formulations have been highlighted in the present work. It is observed that the range of heavy ions is greater in aromatic polymers (Lexan polycarbonate) as compared to the aliphatic polymers (CR-39) irradiated with similar ions having same incident energies. The SRIM-98 and SRIM2003.26 codes don't show any significant trend in deviations, however, LISE++:0-[Hub90] code provides overall good agreement with the experimental values. The ratio of track etch rate (along projectile trajectory) to the bulk etch rate has also been studied as a function of energy loss of heavy ions in these polymers.

  6. Direct patterning of vortex generators on a fiber tip using a focused ion beam.

    Science.gov (United States)

    Vayalamkuzhi, Pramitha; Bhattacharya, Shanti; Eigenthaler, Ulrike; Keskinbora, Kahraman; Samlan, C T; Hirscher, Michael; Spatz, Joachim P; Viswanathan, Nirmal K

    2016-05-15

    The realization of spiral phase optical elements on the cleaved end of an optical fiber by focused ion beam milling is presented. A focused Ga+ ion beam with an acceleration voltage of 30 keV is used to etch continuous spiral phase plates and fork gratings directly on the tip of the fiber. The phase characteristics of the output beam generated by the fabricated structures measured via an interference experiment confirmed the presence of phase singularity in the output beam. The devices are expected to be promising candidates for all-fiber beam shaping and optical trapping applications.

  7. Etching and structure transformations in uncured epoxy resin under rf-plasma and plasma immersion ion implantation

    Science.gov (United States)

    Kondyurin, Alexey; Bilek, Marcela

    2010-05-01

    Uncured epoxy resin was spun onto silicon wafer and treated by plasma and plasma immersion ion implantation (PIII) by argon ions with energy up to 20 keV. Ellipsometry, FTIR spectroscopy and optical microscopy methods were used for analysis. The etching, carbonization, oxidation and crosslinking effects were observed. The curing reactions in modified epoxy resin are observed without a hardening agent. A model of structural transformations in epoxy resin under plasma and ion beam irradiation is proposed and discussed in relation to processes in a space environment.

  8. Nanostructured plasma etched, magnetron sputtered nanolaminar Cr{sub 2}AlC MAX phase thin films

    Energy Technology Data Exchange (ETDEWEB)

    Grieseler, Rolf, E-mail: rolf.grieseler@tu-ilmenau.de [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Hähnlein, Bernd; Stubenrauch, Mike [TU Ilmenau, Institute of Micro and Nanotechnologies MacroNano, Chair Nanotechnology, Gustav-Kirchhoff-Str. 1, 98693 Ilmenau (Germany); Kups, Thomas [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Wilke, Marcus [MFPA Weimar, Testing Center for Thin Films and Material Properties at TU Ilmenau, Gustav-Kirchhoff-Str. 5, Ilmenau (Germany); Hopfeld, Marcus [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Pezoldt, Jörg [TU Ilmenau, Institute of Micro and Nanotechnologies MacroNano, Chair Nanotechnology, Gustav-Kirchhoff-Str. 1, 98693 Ilmenau (Germany); Schaaf, Peter [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany)

    2014-02-15

    The knowledge of the mechanical properties of new materials determines essentially their usability and functionality when used in micro- and nanostructures. MAX phases are new and highly interesting materials due to their unique combination of materials properties. In this article a new method for producing the Cr{sub 2}AlC MAX phase is presented. Thin film elemental multilayer deposition and subsequent rapid thermal annealing forms the MAX phase within seconds. Additionally, free standing microstructures (beams and cantilevers) based on this MAX phase films are prepared by plasma etching. The mechanical properties of these MAX phase microstructures are investigated.

  9. Aluminum thin film enhanced IR nanosecond laser-induced frontside etching of transparent materials

    Science.gov (United States)

    Nieto, Daniel; Cambronero, Ferran; Flores-Arias, María Teresa; Farid, Nazar; O'Connor, Gerard M.

    2017-01-01

    Laser processing of glass is of significant commercial interest for microfabrication of precision optical engineering devices. In this work, a laser ablation enhancement mechanism for microstructuring of glass materials is presented. The method consists of depositing a thin film of aluminum on the front surface of the glass material to be etched. The laser beam modifies the glass material by being incident on this front-side. The influence of ablation fluence in the nanosecond regime, in combination with the deposition of the aluminum layer of various thicknesses, is investigated by determining the ablation threshold for different glass materials including soda-lime, borosilicate, fused silica and sapphire. Experiments are performed using single laser pulse per shot in an air environment. The best enhancement in terms of threshold fluence reduction is obtained for a 16 nm thick aluminum layer where a reduction of two orders of magnitude in the ablation threshold fluence is observed for all the glass samples investigated in this work.

  10. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage

    Science.gov (United States)

    Ding, Ruhang

    Plasma etching is a critical tool in the fabrication of Si/SiGe heterostructure quantum devices, but with challenges addressed herein, including (1) control of etch profiles and (2) damage to etched feature sidewalls that affects device performance. (1) Fluorocarbon-based plasma etching often results in device profiles with undercuts due to preferential etching of SiGe over silicon. A C4F8/N2/Ar etch plasma gas mixture introduced here has been successfully used to achieve straight sidewalls through heterostructure layers by formation of a fluorocarbon inhibitor film on feature sidewalls to prevent undercutting. (2) Chemical and structural changes in the semiconductor at feature sidewalls associated with plasma-surface interactions are considered damage, as they affect band structure and electrical conduction in the active region of the device, known as the 2-dimensional electron gas (2DEG). In experiments designed to better understand the mechanisms of plasma-induced sidewall damage, damage to straight wires was characterized both by the width of a non-conductive "sidewall depletion" region at the device sidewall, and by the noise level factor, gamma H/N, determined from spectra of low frequency noise. Observed increases in sidewall depletion width with increasing etch depth are tentatively attributed to the increase in total number of defects with increased plasma exposure time. Excess negative charge incorporated into the fluorocarbon inhibitor film could be another contributing factor. Other factors considered, including defects at the bottom of etched features as well as leakage current bypassing the wire, are ruled out as their contribution is expected to diminish as the distance between the 2DEG and feature bottom increases. The noise level factor, gammaH /N, shows a maximum with increasing etch depth, possibly the result of two competing effects: increasing ion dose and decreasing leakage current. The noise level shows a minimum at an ion bombardment energy

  11. Focused ion beam post-processing of optical fiber Fabry-Perot cavities for sensing applications.

    Science.gov (United States)

    André, Ricardo M; Pevec, Simon; Becker, Martin; Dellith, Jan; Rothhardt, Manfred; Marques, Manuel B; Donlagic, Denis; Bartelt, Hartmut; Frazão, Orlando

    2014-06-01

    Focused ion beam technology is combined with chemical etching of specifically designed fibers to create Fabry-Perot interferometers. Hydrofluoric acid is used to etch special fibers and create microwires with diameters of 15 μm. These microwires are then milled with a focused ion beam to create two different structures: an indented Fabry-Perot structure and a cantilever Fabry-Perot structure that are characterized in terms of temperature. The cantilever structure is also sensitive to vibrations and is capable of measuring frequencies in the range 1 Hz - 40 kHz.

  12. Long-term Adhesion Study of Self-etching Systems to Plasma-treated Dentin.

    Science.gov (United States)

    Hirata, Ronaldo; Teixeira, Hellen; Ayres, Ana Paula Almeida; Machado, Lucas S; Coelho, Paulo G; Thompson, Van P; Giannini, Marcelo

    2015-06-01

    To determine the influence of atmospheric pressure plasma (APP) treatment on the microtensile dentin bond strength of two self-etching adhesive systems after one year of water storage as well as observe the contact angle changes of dentin treated with plasma and the micromorphology of resin/dentin interfaces using SEM. For contact angle measurements, 6 human molars were sectioned to remove the occlusal enamel surface, embedded in PMMA resin, and ground to expose a flat dentin surface. Teeth were divided into two groups: 1) argon APP treatment for 30 s, and 2) blown air (control). For the microtensile test, 28 human third molars were used and prepared similarly to contact angle measurements. Teeth were randomly divided into 4 groups (n = 7) according to two self-etching adhesives and APP treatment (with/without). After making the composite resin buildup, teeth were sectioned perpendicular to the bonded interface to obtain beam specimens. The specimens were tested after 24 h and one year of water storage until failure. Bond strength data were analyzed by three-way ANOVA and Tukey's post-hoc test (α = 0.05%). Three beam specimens per group that were not used in the bond strength test were prepared for interfacial SEM analysis. APP application decreased the contact angle, but increased the bond strength only for one adhesive tested. SEM evaluation found signs of degradation within interfacial structures following 1-year aging in water. APP increased the dentin surface energy, but the effects of APP and 1-year water storage on dentin bond strength were product dependent. APP increased the dentin surface energy. It also increased the bond strength for Scotchbond Universal, but storage for one year negated the positive effect of APP treatment.

  13. Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

    2016-08-01

    Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

  14. The sub-micron hole array in sapphire produced by inductively-coupled plasma reactive ion etching.

    Science.gov (United States)

    Shiao, Ming-Hua; Chang, Chun-Ming; Huang, Su-Wei; Lee, Chao-Te; Wu, Tzung-Chen; Hsueh, Wen-Jeng; Ma, Kung-Jeng; Chiang, Donyau

    2012-02-01

    The sub-micron hole array in a sapphire substrate was fabricated by using nanosphere lithography (NSL) combined with inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. Polystyrene nanospheres of about 600 nm diameter were self-assembled on c-plane sapphire substrates by the spin-coating method. The diameter of polystyrene nanosphere was modified by using oxygen plasma in ICP-RIE system. The size of nanosphere modified by oxygen plasma was varied from 550 to 450 nm with different etching times from 15 to 35 s. The chromium thin film of 100 nm thick was then deposited on the shrunk nanospheres on the substrate by electron-beam evaporation system. The honeycomb type chromium mask can be obtained on the sapphire substrate after the polystyrene nanospheres were removed. The substrate was further etched in two sets of chlorine/Argon and boron trichloride/Argon mixture gases at constant pressure of 50 mTorr in ICP-RIE processes. The 400 nm hole array in diameter can be successfully produced under suitable boron trichloride/Argon gas flow ratio.

  15. A multifunctional plasma and deposition sensor for the characterization of plasma sources for film deposition and etching

    Science.gov (United States)

    Weise, Michael; Seeger, Stefan; Harbauer, Karsten; Welzel, Thomas; Ellmer, Klaus

    2017-07-01

    Our recently reported multifunctional plasma and deposition sensor [Welzel et al., Appl. Phys. Lett. 102, 211605 (2013)] was used for the characterization of two different plasma sources: a magnetron sputtering deposition source and an ion beam source. The multifunctional sensor, based on a conventional quartz crystal monitor (microbalance) for mass increase/decrease measurements, can measure quasi-simultaneously the deposition/etching flux, the energy flux, and the charged particle flux. By moving the sensor or the plasma source stepwise against each other, the lateral (radial) flux profiles of the different sources can be measured with a lateral resolution of about 8 mm, the diameter of aperture in front of the quartz crystal. It is demonstrated that this compact and simple multifunctional sensor is a versatile tool for the characterization of different kinds of plasma sources for deposition and etching purposes. By combining the different measured quantities, the ion-to-neutral ratio and the mean energy per deposited atom can be calculated, parameters that are essential for the characterization of plasma deposition and etch processes.

  16. Optimizing shape uniformity and increasing structure heights of deep reactive ion etched silicon x-ray lenses

    Science.gov (United States)

    Stöhr, Frederik; Wright, Jonathan; Simons, Hugh; Michael-Lindhard, Jonas; Hübner, Jörg; Jensen, Flemming; Hansen, Ole; Poulsen, Henning Friis

    2015-12-01

    Line-focusing compound silicon x-ray lenses with structure heights exceeding 300 μm were fabricated using deep reactive ion etching. To ensure profile uniformity over the full height, a new strategy was developed in which the perimeter of the structures was defined by trenches of constant width. The remaining sacrificial material inside the lens cavities was removed by etching through the silicon wafer. Since the wafers become fragile after through-etching, they were then adhesively bonded to a carrier wafer. Individual chips were separated using laser micro machining and the 3D shape of fabricated lenses was thoroughly characterized by a variety of means. Optical testing using synchrotron radiation with a photon energy of 56 keV yielded a 300 μm wide beam with a waist of 980 nm (full width at half maximum) at a focal length of 1.3 m. Optical aberrations are discussed in the context of the shape analysis, where a slight bowing of the lens sidewalls and an insufficiently uniform apex region are identified as resolution-limiting factors. Despite these, the proposed fabrication route proved a viable approach for producing x-ray lenses with large structure heights and provides the means to improve the resolution and capabilities of modern x-ray techniques such as x-ray microscopy and 3D x-ray diffraction.

  17. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gosalvez, M.A.; Foster, A.S.; Nieminen, R.M

    2002-12-30

    Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage, including the dependence of the fastest-etched plane orientation, is implicitly contained in the model and predictions of convex corner under-etching structures are made. We show that the whole etching process is controlled by only a few surface configurations involving a particular type of next-nearest neighbours. The relative value of the removal probabilities of these confitions determines the balance in the occurrence of step propagation and etch pitting for all surface orientations.

  18. Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi2Sr2CaCu2O y

    Science.gov (United States)

    Kakizaki, Yoshihiro; Koyama, Junpei; Yamaguchi, Ayami; Umegai, Shunpei; Ayukawa, Shin-ya; Kitano, Haruhisa

    2017-04-01

    We report a transmission electron microscopy (TEM) study on the damage produced by the focused ion beam (FIB) etching for small Bi2Sr2CaCu2O y (Bi2212) intrinsic Josephson junctions (IJJs). The selected area diffraction patterns of TEM images demonstrate that the FIB damage causes the formation of an amorphous layer. The thickness of FIB damage is at least 30 nm for the Ga+ ion beam emitted at 50 pA and 30 kV, independent of the incident direction of the Ga+ ion beam. We also confirmed that the damage or the redeposition due to the FIB etching was effectively removed by the additional irradiation of Ar ions after the FIB etching. This suggests the advantage of the combinatorial method of the FIB and Ar-ion etchings in the successful fabrication of small and high-quality IJJs.

  19. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    Energy Technology Data Exchange (ETDEWEB)

    Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

    2016-09-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  20. Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops

    Energy Technology Data Exchange (ETDEWEB)

    English, Timothy S., E-mail: englisht@stanford.edu [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Provine, J [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Marshall, Ann F.; Koh, Ai Leen [Stanford Nano Shared Facilities, Stanford University, Stanford, CA 94305 (United States); Kenny, Thomas W. [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2016-07-15

    Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops. An ultrathin amorphous etch-stop layer simultaneously serves as an electron transparent support membrane whose thickness is defined by a controlled growth process such as atomic layer deposition with sub-nanometer precision. This approach eliminates the need for mechanical polishing or ion milling to achieve electron transparency, and reduces the occurrence of preparation induced artifacts. Furthermore, multiple specimens from a plurality of samples can be thinned in parallel due to high selectivity of the vapor-phase etching process. These features enable dramatic reductions in preparation time and cost without sacrificing specimen quality and provide advantages over wet etching techniques. Finally, we demonstrate a platform for high-throughput transmission electron microscopy of plan-view specimens by combining the parallel preparation capabilities of vapor-phase etching with wafer-scale micro- and nanofabrication. - Highlights: • Parallel thinning of plan-view specimens enables high-throughput microscopy studies. • The support membrane thickness is controlled with sub-nanometer precision. • No physical etching (polishing, dimpling, or ion milling) is required. • Large area and uniformly thin specimens are suitable for Cs-corrected HRTEM. • Wafer-scale integration enables custom specimens for in situ experiments.

  1. Defects of mitochondrial DNA replication.

    Science.gov (United States)

    Copeland, William C

    2014-09-01

    Mitochondrial DNA is replicated by DNA polymerase γ in concert with accessory proteins such as the mitochondrial DNA helicase, single-stranded DNA binding protein, topoisomerase, and initiating factors. Defects in mitochondrial DNA replication or nucleotide metabolism can cause mitochondrial genetic diseases due to mitochondrial DNA deletions, point mutations, or depletion, which ultimately cause loss of oxidative phosphorylation. These genetic diseases include mitochondrial DNA depletion syndromes such as Alpers or early infantile hepatocerebral syndromes, and mitochondrial DNA deletion disorders, such as progressive external ophthalmoplegia, ataxia-neuropathy, or mitochondrial neurogastrointestinal encephalomyopathy. This review focuses on our current knowledge of genetic defects of mitochondrial DNA replication (POLG, POLG2, C10orf2, and MGME1) that cause instability of mitochondrial DNA and mitochondrial disease.

  2. Regulation of beta cell replication

    DEFF Research Database (Denmark)

    Lee, Ying C; Nielsen, Jens Høiriis

    2008-01-01

    Beta cell mass, at any given time, is governed by cell differentiation, neogenesis, increased or decreased cell size (cell hypertrophy or atrophy), cell death (apoptosis), and beta cell proliferation. Nutrients, hormones and growth factors coupled with their signalling intermediates have been...... suggested to play a role in beta cell mass regulation. In addition, genetic mouse model studies have indicated that cyclins and cyclin-dependent kinases that determine cell cycle progression are involved in beta cell replication, and more recently, menin in association with cyclin-dependent kinase...... inhibitors has been demonstrated to be important in beta cell growth. In this review, we consider and highlight some aspects of cell cycle regulation in relation to beta cell replication. The role of cell cycle regulation in beta cell replication is mostly from studies in rodent models, but whether...

  3. Shell Separation for Mirror Replication

    Science.gov (United States)

    1999-01-01

    NASA's Space Optics Manufacturing Center has been working to expand our view of the universe via sophisticated new telescopes. The Optics Center's goal is to develop low-cost, advanced space optics technologies for the NASA program in the 21st century - including the long-term goal of imaging Earth-like planets in distant solar systems. To reduce the cost of mirror fabrication, Marshall Space Flight Center (MSFC) has developed replication techniques, the machinery, and materials to replicate electro-formed nickel mirrors. Optics replication uses reusable forms, called mandrels, to make telescope mirrors ready for final finishing. MSFC optical physicist Bill Jones monitors a device used to chill a mandrel, causing it to shrink and separate from the telescope mirror without deforming the mirror's precisely curved surface.

  4. A novel restricted-flow etching method for glass

    Institute of Scientific and Technical Information of China (English)

    Hai-bo XIE; Yi ZHENG; Yu-run FAN; Xin FU; Hua-yong YANG

    2009-01-01

    This paper presents a novel micro fabrication method based on the laminar characteristics of micro-scale flows. Therein the separator and etchant are alternatively arranged in micro channels to form multiple laminar streams, and the etchant is located at the site where the reaction is supposed to occur. This new micro fabrication process can be used for the high aspect ratio etching inside a microchannel on glass substrates. Furthermore, the topography of microstructure patterned by this method can be controlled by changing the flow parameters of the separator and etchant. Experiments on the effects of flow parameters on the aspect ratio, side wall profile and etching rate were carried out on a glass substrate. The effect of flow rates on the etching rate and the micro topography was analyzed, in addition, experiments with dynamical changes of the flow rate ratio of the separator and etchant showed that the verticality of the side walls of microstructures can be significantly improved. The restricted flowing etching technique not only abates the isotropic effect in the traditional wet etching but also significantly reduces the dependence on expensive photolithographic equipment.

  5. Innovative, Inexpensive Etching Technique Developed for Polymer Electro- Optical Structures

    Science.gov (United States)

    Nguyen, Hung D.

    1999-01-01

    Electro-optic, polymer-based integrated optic devices for high-speed communication and computing applications offer potentially significant advantages over conventional inorganic electro-optic crystals. One key area of integrated optical technology--primary processing and fabrication--may particularly benefit from the use of polymer materials. However, as efforts concentrate on the miniaturization of electro-integrated circuit pattern geometries, the ability to etch fine features and smoothly sloped sidewalls is essential to make polymers useful for electro-integrated circuit applications. There are many existing processes available to etch polymer materials, but they all yield nearly vertical sidewalls. Vertical sidewalls are too difficult to reliably cover with a metal layer, and incomplete metalization degrades microwave performance, particularly at high frequency. However, obtaining a very sloped sidewall greatly improves the deposition of metal on the sidewall, leading to low-loss characteristics, which are essential to integrating these devices in highspeed electro-optic modulators. The NASA Lewis Research Center has developed in-house an inexpensive etching technique that uses a photolithography method followed by a simple, wet chemical etching process to etch through polymer layers. In addition to being simpler and inexpensive, this process can be used to fabricate smoothly sloped sidewalls by using a commercial none rodible mask: Spin-On-Glass. A commercial transparent material, Spin-On-Glass, uses processes and equipment similar to that for photoresist techniques.

  6. Environmental photostability of SF6-etched silicon nanocrystals

    Science.gov (United States)

    Liptak, R. W.; Yang, J.; Kramer, N. J.; Kortshagen, U.; Campbell, S. A.

    2012-10-01

    We report on the long-term environmental stability of the photoluminescent (PL) properties of silicon nanocrystals (SiNCs). We prepared sulfur hexafluoride (SF6) etched SiNCs in a two-stage plasma reactor and investigated their PL stability against UV irradiation in air. Unlike SiNCs with hydrogen-passivated surfaces, the SF6-etched SiNCs exhibit no photobleaching upon extended UV irradiation despite surface oxidation. Furthermore, the PL quantum yield also remains stable upon heating the SF6-etched SiNCs up to 160 °C. The observed thermal and UV stability of SF6-etched SiNCs combined with their PL quantum yields of up to ˜50% make them attractive candidates for UV downshifting to enhance the efficiency of solar cells. Electron paramagnetic spin resonance indicates that the SF6-etched SiNCs have a lowered density of defect states, both as-formed and after room temperature oxidation in air.

  7. Dental zirconia can be etched by hydrofluoric acid.

    Science.gov (United States)

    Sriamporn, Tool; Thamrongananskul, Niyom; Busabok, Chumphol; Poolthong, Sushit; Uo, Motohiro; Tagami, Junji

    2014-01-01

    The surface morphology and crystal structure change of dental zirconia after hydrofluoric acid (HF) etching were evaluated. Four groups of sintered zirconia specimens were 1) control group, 2) immersion in 9.5%HF at 25°C for 1, 2, 3, or 24 h, 3) immersion in 9.5%HF at 80°C for 1, 3, 5, or 30 min and 4) immersion in 48%HF at 25°C for 30 or 60 min. The specimens were evaluated under SEM and XRD. The SEM analysis revealed changes in surface topography for all the HF-etched zirconia specimens. The irregularities surface increased with increasingly longer immersion times and higher etching solution temperatures. The XRD analysis of the HFetched zirconia specimens revealed the presence of a crystalline monoclinic phase along with a tetragonal form. It was concluded HF can etch dental zirconia ceramic, creating micro-morphological changes. Tetragonal-to-monoclinic phase transformation was induced on the etched zirconia surface.

  8. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  9. Fabrication of polymer nanowires via maskless O2 plasma etching.

    Science.gov (United States)

    Du, Ke; Wathuthanthri, Ishan; Liu, Yuyang; Kang, Yong Tae; Choi, Chang-Hwan

    2014-04-25

    In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems.

  10. Effect of benzotriazole on the anisotropic electrolytic etching of copper

    Energy Technology Data Exchange (ETDEWEB)

    Papapanayiotou, D.; Deligianni, H.; Alkire, R.C. [Univ. of Illinois, Urbana, IL (United States)

    1998-09-01

    Electrolytic etching of copper foil at the base of cavities formed by patterned photoresist was investigated in 0.5 M sulfuric acid solutions which either contained 40 mM benzotriazole (BTA) or were free of BTA. It was found that undercutting (metal dissolution beneath the photoresist) was minimized by the action of surface films in both solutions. It was also found that the nature of the surface films and the mechanism by which they enhanced etch anisotropy differed. In additive-free solutions, anisotropic etching was observed under conditions of applied potential and flow for which mass transfer was suppressed in the interior corner regions of cavities. Such operating conditions in additive-free solutions displayed characteristic current transients. In BTA-containing solutions, the etch profiles were highly dependent on applied potential. In contrast to the additive-free solutions, the flow conditions in BTA-containing solutions had little effect on the current transients or on the degree of undercutting within the region of applied potential in which anisotropic etching was achievable.

  11. Personality and Academic Motivation: Replication, Extension, and Replication

    Science.gov (United States)

    Jones, Martin H.; McMichael, Stephanie N.

    2015-01-01

    Previous work examines the relationships between personality traits and intrinsic/extrinsic motivation. We replicate and extend previous work to examine how personality may relate to achievement goals, efficacious beliefs, and mindset about intelligence. Approximately 200 undergraduates responded to the survey with a 150 participants replicating…

  12. Anisotropic etching of bilayer graphene controlled by gate voltage%双层石墨烯在栅压调控下的各向异性刻蚀∗

    Institute of Scientific and Technical Information of China (English)

    王国乐; 谢立; 陈鹏; 杨蓉; 时东霞; 张广宇

    2016-01-01

    electronic beam evaporation for electrical contacts. Gate voltates were applied to the bilayer graphene samples to make them either positively or negitively charged. These charged samples were then subjected to the hydrogen anisotropic etching at 400 ◦C under the plasma power of 60 W and gas pressure of 0.3 Torr. The etching rates were characterized by the sizes of the etched hexagonal holes. We found that the etching rate for bilayer graphene on SiO2 substrate depends strongly on the gate voltages applied. With gate voltages sweeping from the negative to the positive, etching rate shows obvious decrease. 45 times of etching rate decrease was seen when sweeping the gate voltages from −30 V (positively charged) to 30 V (negatively charged). This gate-dependent anisotropic etching suggests that hydrogen ions rather than radicals plays a key role during the anisotropic etching process since the negatively charged graphene could neutralize the hydrogen ions quickly thus make them unreactive. The present work provides a strategy for fabrication of graphene nanostructures by anisotropic etching with a controllable manner.

  13. Regulation of Replication Recovery and Genome Integrity

    DEFF Research Database (Denmark)

    Colding, Camilla Skettrup

    facilitate replication recovery after MMS-induced replication stress. Our data reveal that control of Mrc1 turnover through the interplay between posttranslational modifications and INQ localization adds another layer of regulation to the replication checkpoint. We also add replication recovery to the list...... is mediated by Mrc1, which ensures Mec1 presence at the stalled replication fork thus facilitating Rad53 phosphorylation. When replication can be resumed safely, the replication checkpoint is deactivated and replication forks restart. One mechanism for checkpoint deactivation is the ubiquitin......-targeted proteasomal degradation of Mrc1. In this study, we describe a novel nuclear structure, the intranuclear quality control compartment (INQ), which regulates protein turnover and is important for recovery after replication stress. We find that upon methyl methanesulfonate (MMS)-induced replication stress, INQ...

  14. Adiabatic tapered optical fiber fabrication in two step etching

    Science.gov (United States)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  15. Novel diamantane polymer platform for enhanced etch resistance

    Science.gov (United States)

    Padmanaban, Munirathna; Chakrapani, Srinivasan; Lin, Guanyang; Kudo, Takanori; Parthasarathy, Deepa; Rahman, Dalil; Anyadiegwu, Clement; Antonio, Charito; Dammel, Ralph R.; Liu, Shenggao; Lam, Frederick; Waitz, Anthony; Yamagchi, Masao; Maehara, Takayuki

    2007-03-01

    The dominant current 193 nm photoresist platform is based on adamantane derivatives. This paper reports on the use of derivatives of diamantane, the next higher homolog of adamantane, in the diamondoid series, as monomers in photoresists. Due to their low Ohnishi number and incremental structural parameter (ISP), such molecules are expected to enhance dry etch stability when incorporated into polymers for resist applications. Starting from the diamantane parent, cleavable and non-cleavable acrylate/methacrylate derivatives of diamantane were obtained using similar chemical steps as for adamantane derivatization. This paper reports on the lithographic and etch performance obtained with a number of diamantane-containing monomers, such as 9-hydroxy-4-diamantyl methacrylate (HDiMA), 2-ethyl-2- diamantyl methacrylate (EDiMA), and 2-methyl-2-diamantyl methacrylate (MDiMA). The etch advantage, dry and wet lithographic performance of some of the polymers obtained from these diamantane-containing polymers are discussed.

  16. Surface Modification of Nitinol by Chemical and Electrochemical Etching

    Science.gov (United States)

    Yang, Zhendi; Wei, Xiaojin; Cao, Peng; Gao, Wei

    2013-07-01

    In this paper, Nitinol, an equiatomic binary alloy of nickel and titanium, was surface modified for its potential biomedical applications by chemical and electrochemical etching. The main objective of the surface modification is to reduce the nickel content on the surface of Nitinol and simultaneously to a rough surface microstructure. As a result, better biocompatibility and better cell attachment would be achieved. The effect of the etching parameters was investigated, using scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometry (EDX) and X-ray photoelectron spectrometry (XPS). The corrosion property of modified Nitinol surfaces was investigated by electrochemical work station. After etching, the Ni content in the surface layer has been reduced and the oxidation of Ti has been enhanced.

  17. Etched track radiometers in radon measurements: a review

    CERN Document Server

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  18. Selective Plasma Etching of Polymeric Substrates for Advanced Applications.

    Science.gov (United States)

    Puliyalil, Harinarayanan; Cvelbar, Uroš

    2016-06-07

    In today's nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a "zoo" of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  19. Selective Plasma Etching of Polymeric Substrates for Advanced Applications

    Directory of Open Access Journals (Sweden)

    Harinarayanan Puliyalil

    2016-06-01

    Full Text Available In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  20. Change in surface morphology of polytetrafluoroethylene by reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Tomohiro, E-mail: tmhr_tkhs.d01@ruri.waseda.j [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Hirano, Yuki; Takasawa, Yuya; Gowa, Tomoko; Fukutake, Naoyuki [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Oshima, Akihiro [The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Tagawa, Seiichi [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Washio, Masakazu [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan)

    2011-02-15

    Polytetrafluoroethylene (PTFE) was exposed to Ar, CF{sub 4}, N{sub 2} and O{sub 2} plasmas using a reactive ion etching facility. After the exposure, the change in the surface morphology of PTFE was examined and characterization studies were performed for the etching rate, surface roughness, radical yields, chemical structures, water repellency and so on. The etching rates of Ar, CF{sub 4}, N{sub 2} and O{sub 2} plasmas were 0.58, 7.2, 4.4 and 17 {mu}m/h, respectively. It was observed that needle-like nano-fiber structures on the surface were irregularly fabricated by the CF{sub 4} plasma. In addition, when the water repellency of exposed samples was evaluated by contact angle, they showed super-hydrophobic properties: contact angle over 150{sup o}.

  1. Effect of thermocycling on the durability of etch-and-rinse and self-etch adhesives on dentin.

    Science.gov (United States)

    Sangwichit, Ketkamon; Kingkaew, Ruksaphon; Pongprueksa, Pong; Senawongse, Pisol

    2016-01-01

    The objective was to compare bond strengths of adhesives with/without thermocycling and to analyze the micromorphology of resindentin interfaces. Flat dentin surfaces were prepared and divided into eight groups to bond with four etch-and-rinse adhesives (Optibond FL, Adper Scotchbond Multi-Purpose, Optibond Solo Plus, and Single Bond 2) and four self-etch adhesives (Clearfil SE Bond, Adper SE Plus, Clearfil S(3) Bond and Adper Easy Bond). Specimens were further divided into two subgroups subjected for with/without thermocycling and then subjected to both micro-tensile test and resin-dentin interface evaluation. The results revealed that there were significant differences in bond strength between the groups with and without thermocycling for all etch-and-rinse groups and for the Adper Easy Bond self-etch group (pBond demonstrated highly durable bond strengths. Furthermore, more silver ion uptake was observed at the resin-dentin interfaces for all etch-and-rinse adhesives and Adper SE Plus and Adper Easy Bond after thermocycling.

  2. Growth of carbon nanotubes on Si/SiO{sub 2} wafer etched by hydrofluoric acid under different etching durations

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Lling-Lling [Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Chai, Siang-Piao, E-mail: chai.siang.piao@monash.edu [Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Mohamed, Abdul Rahman [School of Chemical Engineering, Universiti Sains Malaysia, Engineering Campus, Seri Ampangan, 14300 NibongTebal, Pulau Pinang (Malaysia)

    2012-05-15

    The preparation of SiO{sub 2} nanoparticles for the metal-free catalyst growth of carbon nanotubes (CNTs) was investigated. SiO{sub 2} nanoparticles were generated by etching Si/SiO{sub 2} wafers with 48-50% hydrofluoric acid. Etching duration was varied to study its effects on the generation of the SiO{sub 2} nanoparticles. Atomic force microscopy characterization showed that etching at 1 min was the most effective considering the significant numbers of SiO{sub 2} nanoparticles obtained under this condition. The wafer etched at 1 min after chemical vapor deposition at 900 Degree-Sign C for 1 h demonstrated a low I{sub D}/I{sub G} from Raman analysis which establishes that CNTs with highly ordered graphitic structures were grown. Raman analysis also showed a strong radial breathing mode peak in the low-frequency range for the substrate following the 1 min etching process after the reaction.

  3. Release etch modeling analysis and the use of laser scanning microscopy for etch time prediction of micromachined structures

    Science.gov (United States)

    Matamis, George; Gogoi, Bishnu P.; Monk, David J.; McNeil, Andrew; Burrows, Veronica A.

    2000-08-01

    An alternative non-destructive analysis method using laser scanning microscopy (LSM) was used to study etch release distances in MEMS pressure sensor. The LSM method eliminates samples preparation and is easy to implement in a MEMS manufacturing environment. In this study, various diaphragm structures were etched using a highly concentrated HF based solution. Experimental etch data were obtained for both SiO2 and PSG films under these various structures. Both the height and the width of the sacrificial layer port/channel had a significant effect on etch rate for both films. As expected, a non-linear etch rate was obtained for both SiO2 and PSG films. Since the HF concentration changes over time in a manufacturing bath process, careful selection of processing time is required in order to fully release MEMS structures. Future theoretical modeling with the assistance of experimental data obtained in this study is being pursued to strengthen past work done by Eaton et al, Monk et al, and Liu et al.

  4. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  5. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    Science.gov (United States)

    Leonard, J. T.; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Lee, S.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2016-01-01

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ˜22 kA/cm2 (25 mA), with a peak output power of ˜180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP12,1), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  6. State of the art etch-and-rinse adhesives

    Science.gov (United States)

    Pashley, David H; Tay, Franklin R; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2013-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti-microbial compounds such as benzalkonium chloride that also inhibits matrix metalloproteinases (MMPs) in dentin. Primers are usually water and HEMA-rich solutions that ensure complete expansion of the collagen fibril meshwork and wet the collagen with hydrophilic monomers. However, water alone can re-expand dried dentin and can also serve as a vehicle for protease inhibitors or protein cross-linking agents that may increase the durability of resin-dentin bonds. In the future, ethanol or other water-free solvents may serve as dehydrating primers that may also contain antibacterial quaternary ammonium methacrylates to inhibit dentin MMPs and increase the durability of resin-dentin bonds. The complete evaporation of solvents is nearly impossible. Manufacturers may need to optimize solvent concentrations. Solvent-free adhesives can seal resin-dentin interfaces with hydrophobic resins that may also contain fluoride and antimicrobial compounds. Etch-and-rinse adhesives produce higher resin-dentin bonds that are more durable than most 1 and 2-step adhesives. Incorporation of protease inhibitors in etchants and/or cross-linking agents in primers may increase the durability of resin-dentin bonds. The therapeutic potential of etch-and-rinse adhesives has yet to be fully exploited. PMID:21112620

  7. A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

    Science.gov (United States)

    Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

    2017-08-01

    The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

  8. Hyperthermia stimulates HIV-1 replication.

    Directory of Open Access Journals (Sweden)

    Ferdinand Roesch

    Full Text Available HIV-infected individuals may experience fever episodes. Fever is an elevation of the body temperature accompanied by inflammation. It is usually beneficial for the host through enhancement of immunological defenses. In cultures, transient non-physiological heat shock (42-45°C and Heat Shock Proteins (HSPs modulate HIV-1 replication, through poorly defined mechanisms. The effect of physiological hyperthermia (38-40°C on HIV-1 infection has not been extensively investigated. Here, we show that culturing primary CD4+ T lymphocytes and cell lines at a fever-like temperature (39.5°C increased the efficiency of HIV-1 replication by 2 to 7 fold. Hyperthermia did not facilitate viral entry nor reverse transcription, but increased Tat transactivation of the LTR viral promoter. Hyperthermia also boosted HIV-1 reactivation in a model of latently-infected cells. By imaging HIV-1 transcription, we further show that Hsp90 co-localized with actively transcribing provirus, and this phenomenon was enhanced at 39.5°C. The Hsp90 inhibitor 17-AAG abrogated the increase of HIV-1 replication in hyperthermic cells. Altogether, our results indicate that fever may directly stimulate HIV-1 replication, in a process involving Hsp90 and facilitation of Tat-mediated LTR activity.

  9. Hyperthermia stimulates HIV-1 replication.

    Science.gov (United States)

    Roesch, Ferdinand; Meziane, Oussama; Kula, Anna; Nisole, Sébastien; Porrot, Françoise; Anderson, Ian; Mammano, Fabrizio; Fassati, Ariberto; Marcello, Alessandro; Benkirane, Monsef; Schwartz, Olivier

    2012-01-01

    HIV-infected individuals may experience fever episodes. Fever is an elevation of the body temperature accompanied by inflammation. It is usually beneficial for the host through enhancement of immunological defenses. In cultures, transient non-physiological heat shock (42-45°C) and Heat Shock Proteins (HSPs) modulate HIV-1 replication, through poorly defined mechanisms. The effect of physiological hyperthermia (38-40°C) on HIV-1 infection has not been extensively investigated. Here, we show that culturing primary CD4+ T lymphocytes and cell lines at a fever-like temperature (39.5°C) increased the efficiency of HIV-1 replication by 2 to 7 fold. Hyperthermia did not facilitate viral entry nor reverse transcription, but increased Tat transactivation of the LTR viral promoter. Hyperthermia also boosted HIV-1 reactivation in a model of latently-infected cells. By imaging HIV-1 transcription, we further show that Hsp90 co-localized with actively transcribing provirus, and this phenomenon was enhanced at 39.5°C. The Hsp90 inhibitor 17-AAG abrogated the increase of HIV-1 replication in hyperthermic cells. Altogether, our results indicate that fever may directly stimulate HIV-1 replication, in a process involving Hsp90 and facilitation of Tat-mediated LTR activity.

  10. Cellular Responses to Replication Problems

    NARCIS (Netherlands)

    M. Budzowska (Magdalena)

    2008-01-01

    textabstractDuring every S-phase cells need to duplicate their genomes so that both daughter cells inherit complete copies of genetic information. It is a tremendous task, given the large sizes of mammalian genomes and the required precision of DNA replication. A major threat to the accuracy and eff

  11. Covert Reinforcement: A Partial Replication.

    Science.gov (United States)

    Ripstra, Constance C.; And Others

    A partial replication of an investigation of the effect of covert reinforcement on a perceptual estimation task is described. The study was extended to include an extinction phase. There were five treatment groups: covert reinforcement, neutral scene reinforcement, noncontingent covert reinforcement, and two control groups. Each subject estimated…

  12. Crinivirus replication and host interactions

    Directory of Open Access Journals (Sweden)

    Zsofia A Kiss

    2013-05-01

    Full Text Available Criniviruses comprise one of the genera within the family Closteroviridae. Members in this family are restricted to the phloem and rely on whitefly vectors of the genera Bemisia and/or Trialeurodes for plant-to-plant transmission. All criniviruses have bipartite, positive-sense ssRNA genomes, although there is an unconfirmed report of one having a tripartite genome. Lettuce infectious yellows virus (LIYV is the type species of the genus, the best studied so far of the criniviruses and the first for which a reverse genetics system was available. LIYV RNA 1 encodes for proteins predicted to be involved in replication, and alone is competent for replication in protoplasts. Replication results in accumulation of cytoplasmic vesiculated membranous structures which are characteristic of most studied members of the Closteroviridae. These membranous structures, often referred to as BYV-type vesicles, are likely sites of RNA replication. LIYV RNA 2 is replicated in trans when co-infecting cells with RNA 1, but is temporally delayed relative to RNA1. Efficient RNA 2 replication also is dependent on the RNA 1-encoded RNA binding protein, P34. No LIYV RNA 2-encoded proteins have been shown to affect RNA replication, but at least four, CP, CPm, Hsp70h, and p59 are virion structural components and CPm is a determinant of whitefly transmissibility. Roles of other LIYV RNA 2-encoded proteins are largely as yet unknown, but P26 is a non-virion protein that accumulates in cells as characteristic plasmalemma deposits which in plants are localized within phloem parenchyma and companion cells over plasmodesmata connections to sieve elements. The two remaining crinivirus-conserved RNA 2-encoded proteins are P5 and P9. P5 is 39 amino acid protein and is encoded at the 5’ end of RNA 2 as ORF1 and is part of the hallmark closterovirus gene array. The orthologous gene in BYV has been shown to play a role in cell-to-cell movement and indicated to be localized to the

  13. Synthesis and chemical etching of Te/C nanocables

    Indian Academy of Sciences (India)

    Guang Sheng Cao; Yong Gang Liu; Wen Wu Yang; Chang Tan; Hui Li; Xiao Juan Zhang

    2011-10-01

    In this paper, Te/C nanocables were fabricated by a hydrothermal method in the presence of cetyltrimethylammonium bromide (CTAB). The products were characterized in detail by multiform techniques: transmission electron microscopy, X-ray diffraction, energy-dispersive X-ray analysis and Fourier transform infrared (FTIR) spectroscopy. The results showed that the products were nanocables with lengths of several microns, core about 20 nm in diameter, and a surrounding sheath of about 60–80 nm in thickness. Te/C nanocables were tailored freely by chemical etching. Carbonaceous nanotubes and Te/C nanocables with fragmentary Te core were obtained by adjusting time of chemical etching.

  14. Study on fast neutron dosimetry using electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Lin, J.T. (National Tsing-Hua Univ., Hsin-Chu, Taiwan); Su, S.J.

    1981-03-01

    Registration of fast-neutron-induced-recoil tracks by electrochemical etching technique as applied to polycarbonate foils has provided a simple, sensitive, and inexpensive means of fast neutron personnel dosimetry. Etching parameters are carefully discussed and it was discovered a new method of stirring in KOH aqueous solution offered considerable improvement over previous procedures. Applied frequency can be decreased from 2kHz to regular 60Hz. The sensitivity of fast neutrons is 0.12-0.18 tracks/cm/sup 2/ per mrem with standard deviation of +/- 20.2%.

  15. Study of reactive ion etching for reverse tone nanoimprint process

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, Y; Yanagisawa, M; Yoshinaga, H; Hiratsuka, K, E-mail: tsuji-yukihiro@sei.co.j [Fiber-optics Core Devices R and D Department, Transmission Devices R and D Laboratories, Sumitomo Electric Industries, LTD. 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 (Japan)

    2009-11-15

    We have used reverse nanoimprint for fabricating diffraction gratings of distributed feedback laser diodes. Generation of residues in the etching process of resin is a serious issue leading to poor line edge roughness of the grating patterns. We have found that the residues are composed of oxide products from Si-containing resin. We have successfully suppressed the generation of the residues by optimizing oxygen partial pressure of reactive ion etching (RIE). We have also succeeded in effectively removing the residues by utilizing sputtering effect of RIE.

  16. Channeling and diffusion in dry-etch damage

    Science.gov (United States)

    Rahman, M.

    1997-09-01

    At present channeling is accepted to be the primary mechanism causing defects deep within dry-etched material, with diffusion possibly modifying the final defect distribution. In this article detailed analytic expressions are presented incorporating both these mechanisms. The dominant parameter affecting damage depth is found to be the mean channeling length. We show how enhanced diffusion, e.g., by illumination, may increase the observed damage. We also study the effect of damage on depletion depths and suggest how the channeling length may be inferred from the etch-depth dependence of conductance or Raman spectroscopy measurements.

  17. Beam collimator

    CERN Multimedia

    1977-01-01

    A four-block collimator installed on a control table for positioning the alignment reference marks. Designed for use with SPS secondary beams, the collimator operates under vacuum conditions. See Annual Report 1976 p. 121 and photo 7701014.

  18. The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

    Science.gov (United States)

    Jayanti, Lindha; Kusumandari; Sujitno, Tjipto; Suryana, Risa

    2016-02-01

    This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

  19. Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lijun, E-mail: lijunwang@mail.xjtu.edu.cn; Zheng, Yashuang; Wu, Chen; Jia, Shenli

    2016-11-01

    Graphical abstract: Pin-ring electrode, double-ring electrode and multi-electrode kHz AC atmospheric pressure plasma jet were used to etch PR on Si wafer, and a corresponding parametric study was carefully investigated. Display Omitted - Highlights: • The surface roughness increases dramatically after APPJ treatment. • The etch rate of the pin-ring electrode APPJ is the highest than that of the multi-electrode APPJ and the double-ring electrode APPJ. • Ar APPJ has a much higher etch rate and more irregular etch trace than He APPJ. • The effective etching initially increases and then decreases with the increment of plasma jet outlet to PR surface distance. - Abstract: In this study, the mechanism of the photoresist (PR) etching by means of a kHz AC atmospheric pressure plasma jet (APPJ) is investigated. The scanning electron (SEM) and the polarizing microscope are used to perform the surface analysis, and the mechanical profilometry is applied to diagnose the etch rate. The results show that granulated structure with numerous microparticles appears at the substrate surface after APPJ treatment, and the etch rate in the etch center is the fastest and gradually slows down to the edge of etch region. In addition, the pin-ring electrode APPJ has the highest etch rate at but easy to damage the Si wafer, the double-ring APPJ is the most stable but requires long time to achieve the ideal etch result, and the etch rate and the etch result of the multi-electrode APPJ fall in between. Ar APPJ had much higher PR etch rate and more irregular etch trace than He APPJ. It is speculated that Ar APPJ is more energetic and effective in transferring reactive species to the PR surface. It is also observed that the effective etch area initially increases and then decreases as plasma jet outlet to the PR surface distance increases.

  20. Realization of Ultraflat Plastic Film Using Dressed-Photon-Phonon-Assisted Selective Etching of Nanoscale Structures

    Directory of Open Access Journals (Sweden)

    Takashi Yatsui

    2015-01-01

    Full Text Available We compared dressed-photon-phonon (DPP etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2 gas. As the dissociation energy of O2 is 5.12 eV, we applied a continuous-wave (CW He-Cd laser (λ= 325 nm, 3.81 eV for the DPP etching and a 5th-harmonic Nd:YAG laser (λ= 213 nm, 5.82 eV for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness, Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.

  1. Confocal microscope analysis of depth of etch between self-limiting and traditional etchant systems.

    Science.gov (United States)

    Wilson, Sara M; Lien, Wen; Lee, David P; Dunn, William J

    2017-09-01

    To see whether there is an advantage to using a self-limiting phosphoric acid etchant versus a traditional 34% phosphoric acid etchant for bonding by measuring the depth of etch at multiple time intervals. A total of 25 bovine teeth were mounted and etched on the facial surface with two different etchants: standard 34% phosphoric acid and a self-limiting 35% phosphoric acid etchant at varied time intervals of 15, 30, 60, 90, and 120 seconds. Teeth were scanned using a three-dimensional laser confocal scanning microscope prior to etching and scanned again after etching to determine the depth of enamel etched compared to the baseline enamel surface prior to etching. The 34% phosphoric acid etchant etched significantly deeper than the self-limiting etch. Etch times exceeding 30 seconds also etched significantly deeper for both types of etchant. The etch depth of the self-limiting etchant was consistently less than the standard etchant. Both types of etchant etched deeper after 30 seconds, but the depth of etch at 120 seconds was not different than at 60 seconds, indicating that both etchants are somewhat self-limiting in depth. Therefore, there is no advantage to using the self-limiting etchant.

  2. Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

    Science.gov (United States)

    Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

    2015-01-01

    The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

  3. Comparison of bonding performance of self-etching and etch-and-rinse adhesives on human dentin using reliability analysis.

    Science.gov (United States)

    Bradna, Pavel; Vrbova, Radka; Dudek, Michal; Roubickova, Adela; Housova, Devana

    2008-12-01

    To estimate the in vitro reliability of typical self-etching and etch-and-rinse adhesives of various application protocols. The following adhesives were applied on flat dentin surfaces of extracted human teeth (n = 223): self-etching two-step adhesives: AdheSE (AH), Clearfil SE Bond (CL), OptiBond SE (OS); one-step adhesives: Adper Prompt L-Pop (ADP), Adper Prompt (AD), and Xeno III (XE); all-in-one adhesive: iBond (IB); etch-and-rinse three-step adhesives: OptiBond FL (OF), two-step Gluma Comfort Bond (G), Excite (E) and Prime & Bond NT (PB). Composite buildups were prepared using a microhybrid composite, Opticor New. Shear bond strength was determined after 24 h of storage at 37 degrees C in distilled water. The results were analyzed with a nested ANOVA (adhesive, type of adhesive) followed by the Fisher post-hoc tests of group homogeneity at alpha = 0.05. A two-parameter Weibull distribution was used to calculate the critical shear bond strength corresponding to 5% probability of failure as a measure of system reliability. ANOVA revealed a significant decrease (p AD=IB=XE>PB=ADP, but no significant difference (p > 0.48) between the etch-and-rinse and self-etching adhesives. The corresponding characteristic bond strength of Weibull distribution ranged between 24.1 and 12.1 MPa, Weibull modulus between 8.3 and 2.1, and the critical shear bond strength varied from 16.0 to 3.0 MPa. Pronounced differences in the critical shear bond strength suggest reliability variations in the adhesive systems tested, which originate from chemical composition rather than type of adhesive.

  4. Comparison of experienced and inexperienced operators on bond strengths of total-etch and self-etch bonding systems.

    Science.gov (United States)

    Giachetti, Luca; Scaminaci Russo, Daniele; Rossi Campani, Edoardo; Baldini, Matteo; Nieri, Michele; Ferrari, Marco

    2011-10-01

    To compare a two-step etch-and-rinse adhesive system and a one-step self-etch adhesive system in order to evaluate the influence of clinical experience on dentin bond strength. 24 human molars were sectioned to obtain two 1 mm-thick slabs of mid-coronal dentin. Both surfaces of one of the two slabs that were obtained from each tooth were treated with a two-step etch-and-rinse adhesive (OptiBond Solo Plus), while both surfaces of the other slab were treated with a one-step self-etch adhesive (OptiBond All-In-One). 24 undergraduate, second-year students applied the adhesive on one of the two surfaces of each slab (Student group), while 12 dentists with experience in adhesive restorative dentistry (Expert group) applied the same adhesive on the other surface of the slab. Nine conical frustum-shaped resin composite (Premise Flowable) build-ups, whose smaller base was bonded to the dentin surface, were constructed on both surfaces of each dentin slab using a custom-made device. After thermocycling, specimens were subjected to microshear bond strength test. Data were analyzed by a multilevel statistical model. The interaction term Experience x Adhesive resulted statistically significant (P < 0.0001). The bond strength (MPa) resulting from the self-etch adhesive was similar in the Student (27.8 +/- 9.0) and in the Expert group (26.5 +/- 7.0). The etch-and-rinse adhesive bond strength within the Student group (23.6 +/- 10.4) was lower than that within the Expert group (28.1 +/- 8.9).

  5. Replication-Uncoupled Histone Deposition during Adenovirus DNA Replication

    OpenAIRE

    Komatsu, Tetsuro; Nagata, Kyosuke

    2012-01-01

    In infected cells, the chromatin structure of the adenovirus genome DNA plays critical roles in its genome functions. Previously, we reported that in early phases of infection, incoming viral DNA is associated with both viral core protein VII and cellular histones. Here we show that in late phases of infection, newly synthesized viral DNA is also associated with histones. We also found that the knockdown of CAF-1, a histone chaperone that functions in the replication-coupled deposition of his...

  6. REPLICATION TOOL AND METHOD OF PROVIDING A REPLICATION TOOL

    DEFF Research Database (Denmark)

    2016-01-01

    structured master surface (3a, 3b, 3c, 3d) having a lateral master pattern and a vertical master profile. The microscale structured master surface (3a, 3b, 3c, 3d) has been provided by localized pulsed laser treatment to generate microscale phase explosions. A method for producing a part with microscale......The invention relates to a replication tool (1, 1a, 1b) for producing a part (4) with a microscale textured replica surface (5a, 5b, 5c, 5d). The replication tool (1, 1a, 1b) comprises a tool surface (2a, 2b) defining a general shape of the item. The tool surface (2a, 2b) comprises a microscale...... energy directors on flange portions thereof uses the replication tool (1, 1a, 1b) to form an item (4) with a general shape as defined by the tool surface (2a, 2b). The formed item (4) comprises a microscale textured replica surface (5a, 5b, 5c, 5d) with a lateral arrangement of polydisperse microscale...

  7. Cytotoxicity of Universal, Self-Etching and Etch-and-Rinse Adhesive Systems According to the Polymerization Time

    OpenAIRE

    Elias,Silvia T.; Santos,Andressa F. dos; Garcia,Fernanda C.P.; Pereira,Patrícia N.R.; Hilgert,Leandro A.; Fonseca-Bazzo,Yris M.; Eliete N.S Guerra; Ribeiro, Ana Paula Dias

    2015-01-01

    This in vitro study evaluated in fibroblast cultures the direct cytotoxicity of universal, self-etching and etch-and-rinse adhesive systems according to the polymerization time. Paper discs were impregnated with adhesives and light-cured (10, 20 or 40 s). The discs were then immersed in culture medium to obtain the eluates for the experimental groups (A1-Single Bond 2; A2-Scotchbond Multi-purpose; A3-Clearfil SE Bond; A4 Scotchbond Universal). As a negative control, paper discs were immersed ...

  8. Field calibration of PADC track etch detectors for local neutron dosimetry in man using different radiation qualities

    Energy Technology Data Exchange (ETDEWEB)

    Haelg, Roger A., E-mail: rhaelg@phys.ethz.ch [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Besserer, Juergen [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Boschung, Markus; Mayer, Sabine [Division for Radiation Safety and Security, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); Clasie, Benjamin [Department of Radiation Oncology, Massachusetts General Hospital, 30 Fruit Street, Boston, MA 02114 (United States); Kry, Stephen F. [Department of Radiation Physics, The University of Texas M.D. Anderson Cancer Center, 1515 Holcombe Blvd., Houston, TX 77030 (United States); Schneider, Uwe [Institute for Radiotherapy, Radiotherapie Hirslanden AG, Hirslanden Medical Center, Rain 34, CH-5000 Aarau (Switzerland); Vetsuisse Faculty, University of Zurich, Winterthurerstrasse 204, CH-8057 Zurich (Switzerland)

    2012-12-01

    In order to quantify the dose from neutrons to a patient for contemporary radiation treatment techniques, measurements inside phantoms, representing the patient, are necessary. Published reports on neutron dose measurements cover measurements performed free in air or on the surface of phantoms and the doses are expressed in terms of personal dose equivalent or ambient dose equivalent. This study focuses on measurements of local neutron doses inside a radiotherapy phantom and presents a field calibration procedure for PADC track etch detectors. An initial absolute calibration factor in terms of H{sub p}(10) for personal dosimetry is converted into neutron dose equivalent and additional calibration factors are derived to account for the spectral changes in the neutron fluence for different radiation therapy beam qualities and depths in the phantom. The neutron spectra used for the calculation of the calibration factors are determined in different depths by Monte Carlo simulations for the investigated radiation qualities. These spectra are used together with the energy dependent response function of the PADC detectors to account for the spectral changes in the neutron fluence. The resulting total calibration factors are 0.76 for a photon beam (in- and out-of-field), 1.00 (in-field) and 0.84 (out-of-field) for an active proton beam and 1.05 (in-field) and 0.91 (out-of-field) for a passive proton beam, respectively. The uncertainty for neutron dose measurements using this field calibration method is less than 40%. The extended calibration procedure presented in this work showed that it is possible to use PADC track etch detectors for measurements of local neutron dose equivalent inside anthropomorphic phantoms by accounting for spectral changes in the neutron fluence.

  9. A Comparative Evaluation of the Efficacy of Etching by the Total Etch and Self-etch Dentin Bonding Systems in the Primary Teeth: An in vitro Study

    Science.gov (United States)

    Chaugule, Vishwas; Katge, Farhin; Poojari, Manohar; Pujari, Prashant; Pammi, Thejokrishna

    2015-01-01

    ABSTRACT Objective: Early childhood caries is now affecting the children in dangerous proportions. There is a wide spread loss of the tooth material irrespective of the type of the carious lesion. Restoration of such lesions with a strong permanent bond between the dental tissues and the restorative dental materials would be a highly desirable requisite. Ultramorphological characterizations show that the interfacial morphology and the chemical characterization of the bonding systems appear to be strongly associated with each other and, therefore, observing and understanding the interfacial phenomenon and its quality would be of great importance in the selection of a dental adhesive for its use in pediatric restorative dentistry. Study design: Human primary molars, which were indicated for extraction, for an array of reasons like caries, normal exfoliation, pathological root resorption, over-retained and serial extraction, were collected for the study purpose. Total number of teeth was then equally distributed into two subgroups, each namely A1 (Prime and Bond NT) and A2 (Xeno III). Results: The type of etching pattern that was observed in group A1 (Prime and Bond NT) of Silverstone’s type II compared to the Silverstone’s type III observed in group A2 (Xeno III). Conclusion: Results of this study indicate that the use of an etchant separately followed by the application of the bonding system–Prime and Bond NT–would provide a better quality of adhesion thus improving the quality and longevity of the restoration done within the limits of enamel in primary dentition. How to cite this article: Mithiborwala SH, Chaugule V, Katge F, Poojari M, Pujari P, Pammi T. A Comparative Evaluation of the Efficacy of Etching by the Total Etch and Self-etch Dentin Bonding Systems in the Primary Teeth: An in vitro Study. Int J Clin Pediatr Dent 2015;8(1):30-36. PMID:26124578

  10. Pattern transfer on large samples using a sub-aperture reactive ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Mill, Agnes; Gerlach, Juergen W.; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

    2011-07-01

    In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using CF{sub 4} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot as well as an accumulation of carbon (up to 40 atomic percent) in the beam periphery, respectively. The substitution of CF{sub 4} by NF{sub 3} as reactive gas reveals a lot of benefits: more stable ion beam conditions in combination with a reduction of the beam size down to a diameter of 5 mm and a reduced amount of the Ni, Fe and Cr contaminations. However, a layer formation of silicon nitride handicaps the chemical contribution of the etching process. These negative side effects influence the transfer of trench structures on quartz by changing the selectivity due to altered chemical reaction of the modified resist layer. Concerning this we investigate the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

  11. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    Directory of Open Access Journals (Sweden)

    Molina-Aldareguia Jon

    2011-01-01

    Full Text Available Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001 substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea

  12. Deep and vertical silicon bulk micromachining using metal assisted chemical etching

    Science.gov (United States)

    Zahedinejad, Mohammad; Delaram Farimani, Saeed; Khaje, Mahdi; Mehrara, Hamed; Erfanian, Alireza; Zeinali, Firooz

    2013-05-01

    In this paper, a newfound and simple silicon bulk micromachining process based on metal-assisted chemical etching (MaCE) is proposed which opens a whole new field of research in MEMS technology. This method is anisotropic and by controlling the etching parameters, deep vertical etching, relative to substrate surface, can be achieved in micrometer size for oriented Si wafer. By utilizing gold as a catalyst and a photoresist layer as the single mask layer for etching, 60 µm deep gyroscope micromachined structures have been fabricated for 2 µm features. The results indicate that MaCE could be the only wet etching method comparable to conventional dry etching recipes in terms of achievable etch rate, aspect ratio, verticality and side wall roughness. It also does not need a vacuum chamber and the other costly instruments associated with dry etching techniques.

  13. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  14. Influence of two self-etching primer systems on enamel adhesion

    National Research Council Canada - National Science Library

    Márcio Antônio Paraizo Borges; Irma Cunha Matos; Kátia Regina Hostílio Cervantes Dias

    2007-01-01

    The aim of this study was to compare two self-etching and a total-etch adhesive systems by assessing their shear bond strength to bovine enamel and the microleakage on class V composite restorations...

  15. Correlation between the cytotoxicity of self-etching resin cements and the degree of conversion

    Directory of Open Access Journals (Sweden)

    Luís FSA Morgan

    2015-01-01

    Conclusion: These results indicate that photopolymerization of dual cure self-etching resin cements decrease toxic effects on cell culture. Adequate photopolymerization should be considered during cementation when using dual polymerization self-etching resin cements.

  16. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2 mm3/m

  17. Roughness kinetic and multiaffinity of anisotropic etched silicon

    Science.gov (United States)

    Hosseinabadi, S.; Rajabi, M.

    2017-02-01

    The effect of etching time (20-200 min) on surface roughness, statistical and fractal properties of silicon wafers during anisotropic chemical etching by KOH is investigated experimentally and theoretically. The evolution of surface morphology of silicon wafers during an anisotropic chemical etching is investigated by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and statistical methods. FESEM investigation shows the formation of pyramid like silicon micro structures that disappear in large time scales. The surface roughness increases and decreases periodically in time with a decreasing exponentially trend. The statistical analysis were performed by calculating the roughness and correlation length, distribution of height fluctuations and two-dimensional multifractal detrending moving average (MFDMA). The fractal nature of silicon wafer changes from mono fractal to multi fractal scaling by etching process and formation of pyramid like silicon nanostructures on it. The strength of multi-fractallity has not an increasing monotonic behavior. The enhancement of irregularities could be a reason for reduction of surface roughness and structure downfall.

  18. Plasma-etched nanostructures for optical applications (Presentation Recording)

    Science.gov (United States)

    Schulz, Ulrike; Rickelt, Friedrich; Munzert, Peter; Kaiser, Norbert

    2015-08-01

    A basic requirement for many optical applications is the reduction of Fresnel-reflections. Besides of interference coatings, nanostructures with sub-wavelength size as known from the eye of the night-flying moth can provide antireflective (AR) properties. The basic principle is to mix a material with air on a sub-wavelength scale to decrease the effective refractive index. To realize AR nanostructures on polymers, the self-organized formation of stochastically arranged antireflective structures using a low-pressure plasma etching process was studied. An advanced procedure involves the use of additional deposition of a thin oxide layer prior etching. A broad range of different structure morphologies exhibiting antireflective properties can be generated on almost all types of polymeric materials. For applications on glass, organic films are used as a transfer medium. Organic layers as thin film materials were evaluated to identify compounds suitable for forming nanostructures by plasma etching. The vapor deposition and etching of organic layers on glass offers a new possibility to achieve antireflective properties in a broad spectral range and for a wide range of light incidence.

  19. Cryo-Etched Black Silicon for Use as Optical Black

    Science.gov (United States)

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  20. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, Vincent L.; Berenschot, J.W.; Elwenspoek, Miko; Fluitman, Jan H.J

    1995-01-01

    A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a w

  1. Effects of Alkaline Pre-Etching to Metal Hydride Alloys

    Directory of Open Access Journals (Sweden)

    Tiejun Meng

    2017-10-01

    Full Text Available The responses of one AB5, two AB2, four A2B7, and one C14-related body-centered-cubic (BCC metal hydrides to an alkaline-etch (45% KOH at 110 °C for 2 h were studied by internal resistance, X-ray diffraction, scanning electron microscope, inductively coupled plasma, and AC impedance measurements. Results show that while the etched rare earth–based AB5 and A2B7 alloys surfaces are covered with hydroxide/oxide (weight gain, the transition metal–based AB2 and BCC-C14 alloys surfaces are corroded and leach into electrolyte (weight loss. The C14-predominated AB2, La-only A2B7, and Sm-based A2B7 showed the most reduction in the internal resistance with the alkaline-etch process. Etched A2B7 alloys with high La-contents exhibited the lowest internal resistance and are suggested for use in the high-power application of nickel/metal hydride batteries.

  2. Selective etching of graphene edges by hydrogen plasma.

    Science.gov (United States)

    Xie, Liming; Jiao, Liying; Dai, Hongjie

    2010-10-27

    We devised a controlled hydrogen plasma reaction at 300 °C to etch graphene and graphene nanoribbons (GNRs) selectively at the edges over the basal plane. Atomic force microscope imaging showed that the etching rates for single-layer and few-layer (≥2 layers) graphene are 0.27 ± 0.05 nm/min and 0.10 ± 0.03 nm/min, respectively. Meanwhile, Raman spectroscopic mapping revealed no D band in the planes of single-layer or few-layer graphene after the plasma reaction, suggesting selective etching at the graphene edges without introducing defects in the basal plane. We found that hydrogen plasma at lower temperature (room temperature) or a higher temperature (500 °C) could hydrogenate the basal plane or introduce defects in the basal plane. Using the hydrogen plasma reaction at the intermediate temperature (300 °C), we obtained narrow, presumably hydrogen terminated GNRs (sub-5 nm) by etching of wide GNRs derived from unzipping of multiwalled carbon nanotubes. Such GNRs exhibited semiconducting characteristics with high on/off ratios (∼1000) in GNR field effect transistor devices at room temperature.

  3. Anisotropic oxygen plasma etching of colloidal particles in electrospun fibers.

    Science.gov (United States)

    Ding, Tao; Tian, Ye; Liang, Kui; Clays, Koen; Song, Kai; Yang, Guoqiang; Tung, Chen-Ho

    2011-02-28

    Oxygen plasma etching of electrospun polymer fibers containing spherical colloids is presented as a new approach towards anisotropic colloidal nanoparticles. The detailed morphology of the resulting nanoparticles can be precisely controlled in a continuous way. The same approach is also amenable to prepare inorganic nanoparticles with double-sided patches.

  4. Controlled MoS₂ layer etching using CF₄ plasma.

    Science.gov (United States)

    Jeon, Min Hwan; Ahn, Chisung; Kim, HyeongU; Kim, Kyong Nam; LiN, Tai Zhe; Qin, Hongyi; Kim, Yeongseok; Lee, Sehan; Kim, Taesung; Yeom, Geun Young

    2015-09-04

    A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed.

  5. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2

  6. Chemical-mechanical planarization aided dimple etching for self alignment.

    Science.gov (United States)

    Jeong, Moonki; Choi, Sungha; Guo, Yongchang; Park, Jaehong; Jeong, Haedo

    2012-04-01

    Through silicon via (TSV) technology is becoming a mainstream method of building 3-dimensional integrated circuits (3D IC). In particular, TSV Cu CMP is a critical process to remove excess Cu and makes a planar surface which requires a removal rate higher than 5 microm/min and a dishing lower than 0.3 microm. This paper focuses on the development of a new self-alignment method using dimples on the TSV Cu back surface. We tried to find an application potential of a bump-dimple structure for self alignment using a pretest tool of a solder ball array structure. Chemical-mechanical planarization (CMP) aided dimple etching is carefully studied as a key solution for deep and uniform dimple formation. The experiment shows that CMP is an excellent process to generate a clean oxide surface and a clear dishing on the Cu TSV, resulting in a seed for etching. Finally, etching realizes a uniform dimple depth of 7 microm to 9 microm in spite of changes of via diameter from 10 microm to 50 microm after only 15 sec etching.

  7. Single etch grating couplers for mass fabrication with DUV lithography

    National Research Council Canada - National Science Library

    Halir, R; Zavargo-Peche, L; Xu, Dan-Xia; Cheben, Pavel; Ma, Rubin; Schmid, Jens Holger; Janz, Siegfried; Densmore, Adam; Ortega-Moñux, A; Molina-Fernández, Í; Fournier, M; Fédeli, J.-M

    2012-01-01

    ... efficiencies with a single etch step, thereby significantly reducing fabrication complexity. Here we demonstrate that such couplers can be fabricated on a large scale with ultra-violet lithography, achieving a 5 dB coupling efficiency at 1,550 nm...

  8. Alcatel Vacuum Technology A Recognized Leader in Deep Plasma Etching

    Institute of Scientific and Technical Information of China (English)

    阿尔卡特真空技术(上海)有限公司

    2005-01-01

    @@ Its first equipment based on a Alcatel patented Inductive Coupled Plasma (ICP) source, with independent source power and substrate bias control for deep etching of silicon was launched in 1993. The exponential growth potential of the MEMS (Micro Electro Mechanical Systems) industry gave birth to the Micro Machining Systems business group (MMS) in 1994.

  9. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, V.L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    1995-01-01

    A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film

  10. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, Vincent L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for as well resist spinning and layer patterning as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a

  11. Dental enamel roughness with different acid etching times: Atomic force microscopy study

    OpenAIRE

    2012-01-01

    Objective: An important characteristic of human dental enamel not yet studied in detail is its surface roughness in mesoscopic scale. This study evaluated quantitatively and qualitatively the surface topography of acid etched enamel with different etching times. Materials and Methods: Ninety-six human maxillary bicuspids were randomly distributed into three groups (n=32): T0 (control), pumiced; T15, 35% phosphoric acid etched enamel for 15 s; T30, 35% phosphoric acid etched enamel for 30 s. R...

  12. Bonding to enamel/dentin etched with phosphoric and hydrofluoric acids.

    Science.gov (United States)

    Barghi, Nassar; Covington, Kendra; Fischer, Dan E; Herbold, Edward T

    2004-10-01

    Repairing porcelain intraorally allows clinicians to provide their patients with a conservative means of treating fractured or debonded restorations. This requires, however, the etching of both porcelain and tooth structure with etching solutions. It is thus relevant to understand the effect that different etching procedures have on shear bond strengths of composite resins to both dentin and enamel structures. Based on the results of this investigation, the authors recommend isolation of tooth structures and the etching of porcelain with hydrofluoric acid.

  13. Replicator dynamics in value chains

    DEFF Research Database (Denmark)

    Cantner, Uwe; Savin, Ivan; Vannuccini, Simone

    2016-01-01

    The pure model of replicator dynamics though providing important insights in the evolution of markets has not found much of empirical support. This paper extends the model to the case of firms vertically integrated in value chains. We show that i) by taking value chains into account, the replicator...... dynamics may revert its effect. In these regressive developments of market selection, firms with low fitness expand because of being integrated with highly fit partners, and the other way around; ii) allowing partner's switching within a value chain illustrates that periods of instability in the early...... stage of industry life-cycle may be the result of an 'optimization' of partners within a value chain providing a novel and simple explanation to the evidence discussed by Mazzucato (1998); iii) there are distinct differences in the contribution to market selection between the layers of a value chain...

  14. Determination of nuclear tracks parameters on sequentially etched PADC detectors

    Science.gov (United States)

    Horwacik, Tomasz; Bilski, Pawel; Koerner, Christine; Facius, Rainer; Berger, Thomas; Nowak, Tomasz; Reitz, Guenther; Olko, Pawel

    Polyallyl Diglycol Carbonate (PADC) detectors find many applications in radiation protection. One of them is the cosmic radiation dosimetry, where PADC detectors measure the linear energy transfer (LET) spectra of charged particles (from protons to heavy ions), supplementing TLD detectors in the role of passive dosemeter. Calibration exposures to ions of known LET are required to establish a relation between parameters of track observed on the detector and LET of particle creating this track. PADC TASTRAK nuclear track detectors were exposed to 12 C and 56 Fe ions of LET in H2 O between 10 and 544 keV/µm. The exposures took place at the Heavy Ion Medical Accelerator (HIMAC) in Chiba, Japan in the frame of the HIMAC research project "Space Radiation Dosimetry-Ground Based Verification of the MATROSHKA Facility" (20P-240). Detectors were etched in water solution of NaOH with three different temperatures and for various etching times to observe the appearance of etched tracks, the evolution of their parameters and the stability of the etching process. The applied etching times (and the solution's concentrations and temperatures) were: 48, 72, 96, 120 hours (6.25 N NaOH, 50 O C), 20, 40, 60, 80 hours (6.25 N NaOH, 60 O C) and 8, 12, 16, 20 hours (7N NaOH, 70 O C). The analysis of the detectors involved planimetric (2D) measurements of tracks' entrance ellipses and mechanical measurements of bulk layer thickness. Further track parameters, like angle of incidence, track length and etch rate ratio were then calculated. For certain tracks, results of planimetric measurements and calculations were also compared with results of optical track profile (3D) measurements, where not only the track's entrance ellipse but also the location of the track's tip could be directly measured. All these measurements have been performed with the 2D/3D measurement system at DLR. The collected data allow to create sets of V(LET in H2 O) calibration curves suitable for short, intermediate and

  15. Fundamentals and applications of on-chip interferometers based on deep-etched silicon-air multilayer reflectors

    Science.gov (United States)

    St-Gelais, Raphael

    Deep reactive ion etching (DRIE) of silicon can be used to fabricate vertical (i.e. in-plane) silicon-air multilayer mirrors. In comparison with out-of-plane reflectors fabricated by thin film deposition, in-plane multilayer assemblies can be monolithically integrated with a variety of useful structures such as passive optical fiber alignment grooves, microfluidic systems, waveguides, and microelectromechanical (MEMS) actuators. However, all previously reported devices suffered from high insertion losses (> 10 dB) which translated, in most cases, in weak light confinement abilities (e.g. low finesses in the case of Fabry-Perot cavities). The first objective of this work is therefore to investigate the sources of loss and the technological limitations that affect interferometers based on deep-etched multilayer reflectors. Theoretical models for the prediction of losses---due to Gaussian beam divergence, surface roughness at silicon-air material interfaces, imperfect verticality of the etch profiles, and misalignment between input and output coupling optical fibers---are provided. Of these four loss mechanisms, the first three are demonstrated to be generally significant. For the devices presented in the current thesis, however, verticality deviation of the etch profiles (etch angle error ~ 0.04°) is found to be negligible compared with the measured contributions of surface roughness (30 nm RMS) and Gaussian beam divergence. The fourth loss mechanism (fiber misalignment) is found to be essentially negligible in all cases. These theoretical models are demonstrated to correspond remarkably well with our experimental results, such that we are able to state clear boundaries on the possibilities and limitations of interferometers based on deep-etched silicon-air multilayer reflectors. Within these boundaries, three new devices---with potential applications in biomedical sensing, chemical sensing, and optical fiber telecommunications---are investigated. Firstly, a deep-etched

  16. Therapeutic targeting of replicative immortality

    OpenAIRE

    Yaswen, Paul; MacKenzie, Karen L.; Keith, W. Nicol; Hentosh, Patricia; Rodier, Francis; Zhu, Jiyue; Firestone, Gary L.; Matheu, Ander; Carnero, Amancio; Bilsland, Alan; Sundin, Tabetha; Honoki, Kanya; Fujii, Hiromasa; Georgakilas, Alexandros G.; Amedei, Amedeo

    2015-01-01

    One of the hallmarks of malignant cell populations is the ability to undergo continuous proliferation. This property allows clonal lineages to acquire sequential aberrations that can fuel increasingly autonomous growth, invasiveness, and therapeutic resistance. Innate cellular mechanisms have evolved to regulate replicative potential as a hedge against malignant progression. When activated in the absence of normal terminal differentiation cues, these mechanisms can result in a state of persis...

  17. Alphavirus polymerase and RNA replication.

    Science.gov (United States)

    Pietilä, Maija K; Hellström, Kirsi; Ahola, Tero

    2017-01-16

    Alphaviruses are typically arthropod-borne, and many are important pathogens such as chikungunya virus. Alphaviruses encode four nonstructural proteins (nsP1-4), initially produced as a polyprotein P1234. nsP4 is the core RNA-dependent RNA polymerase but all four nsPs are required for RNA synthesis. The early replication complex (RC) formed by the polyprotein P123 and nsP4 synthesizes minus RNA strands, and the late RC composed of fully processed nsP1-nsP4 is responsible for the production of genomic and subgenomic plus strands. Different parts of nsP4 recognize the promoters for minus and plus strands but the binding also requires the other nsPs. The alphavirus polymerase has been purified and is capable of de novo RNA synthesis only in the presence of the other nsPs. The purified nsP4 also has terminal adenylyltransferase activity, which may generate the poly(A) tail at the 3' end of the genome. Membrane association of the nsPs is vital for replication, and alphaviruses induce membrane invaginations called spherules, which form a microenvironment for RNA synthesis by concentrating replication components and protecting double-stranded RNA intermediates. The RCs isolated as crude membrane preparations are active in RNA synthesis in vitro, but high-resolution structure of the RC has not been achieved, and thus the arrangement of viral and possible host components remains unknown. For some alphaviruses, Ras-GTPase-activating protein (Src-homology 3 (SH3) domain)-binding proteins (G3BPs) and amphiphysins have been shown to be essential for RNA replication and are present in the RCs. Host factors offer an additional target for antivirals, as only few alphavirus polymerase inhibitors have been described.

  18. V-groove gratings on silicon for infrared beam splitting.

    Science.gov (United States)

    Rajkumar, N; McMullin, J N

    1995-05-10

    Infrared beam-splitting transmission gratings that utilize anisotropically etched v-grooves on silicon wafers are proposed. With scalar diffraction theory to find the amplitudes of the different diffraction orders, a numerical search is used to find optimum designs for 1:3, 1:5, and 1:7 splitters with efficiencies greater than 70% with a standard deviation in intensity of no more than 7%.

  19. Dynamic replication of Web contents

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The phenomenal growth of the World Wide Web has brought huge increase in the traffic to the popular web sites.Long delays and denial of service experienced by the end-users,especially during the peak hours,continues to be the common problem while accessing popular sites.Replicating some of the objects at multiple sites in a distributed web-server environment is one of the possible solutions to improve the response time/Iatency. The decision of what and where to replicate requires solving a constraint optimization problem,which is NP-complete in general.In this paper, we consider the problem of placing copies of objects in a distributed web server system to minimize the cost of serving read and write requests when the web servers have Iimited storage capacity.We formulate the problem as a 0-1 optimization problem and present a polynomial time greedy algorithm with backtracking to dynamically replicate objects at the appropriate sites to minimize a cost function.To reduce the solution search space,we present necessary condi tions for a site to have a replica of an object jn order to minimize the cost function We present simulation resuIts for a variety of problems to illustrate the accuracy and efficiency of the proposed algorithms and compare them with those of some well-known algorithms.The simulation resuIts demonstrate the superiority of the proposed algorithms.

  20. Nanopipes in GaN: photo-etching and TEM study

    NARCIS (Netherlands)

    Lazar, S.; Weyher, J.L.; Macht, L.; Tichelaar, F.D.; Zandbergen, H.W.

    2004-01-01

    Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction co

  1. Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

    Science.gov (United States)

    Benson, J. David; Stoltz, Andrew J., Jr.; Kaleczyc, Andrew W.; Martinka, Mike; Almeida, Leo A.; Boyd, Phillip R.; Dinan, John H.

    2002-12-01

    Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

  2. Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet

    Science.gov (United States)

    Wang, Lijun; Zheng, Yashuang; Wu, Chen; Jia, Shenli

    2016-11-01

    In this study, the mechanism of the photoresist (PR) etching by means of a kHz AC atmospheric pressure plasma jet (APPJ) is investigated. The scanning electron (SEM) and the polarizing microscope are used to perform the surface analysis, and the mechanical profilometry is applied to diagnose the etch rate. The results show that granulated structure with numerous microparticles appears at the substrate surface after APPJ treatment, and the etch rate in the etch center is the fastest and gradually slows down to the edge of etch region. In addition, the pin-ring electrode APPJ has the highest etch rate at but easy to damage the Si wafer, the double-ring APPJ is the most stable but requires long time to achieve the ideal etch result, and the etch rate and the etch result of the multi-electrode APPJ fall in between. Ar APPJ had much higher PR etch rate and more irregular etch trace than He APPJ. It is speculated that Ar APPJ is more energetic and effective in transferring reactive species to the PR surface. It is also observed that the effective etch area initially increases and then decreases as plasma jet outlet to the PR surface distance increases.

  3. Experimental demonstration of Generalized Phase Contrast based Gaussian beam-shaper

    DEFF Research Database (Denmark)

    Tauro, Sandeep; Bañas, Andrew Rafael; Palima, Darwin

    2011-01-01

    -cost binary-phase optics fabricated using photolithography and chemical etching techniques can replace the SLM in static and high power beam shaping applications. The design parameters for the binary-phase elements of the module are chosen according to the results of our previously conducted analysis...... and numerical demonstrations [Opt. Express 15, 11971 (2007)]. Beams with a variety of cross-sections such as circular, rectangular and square, with near flat-top intensity distributions are demonstrated. GPC-based beam shaping is inherently speckle-free and the shaped beams maintain a flat output phase. The non...

  4. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

    Directory of Open Access Journals (Sweden)

    N. Okada

    2017-06-01

    Full Text Available We focused on inductively coupled plasma and reactive ion etching (ICP–RIE for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions. To determine the optimum chemical etching conditions, the flow rates of Ar and Cl2, ICP power, and chamber pressure were varied in the etching of c-plane GaN layers with stripe patterns. It was determined that the combination of Ar and Cl2 flow rates of 100 sccm, chamber pressure of 7 Pa, and ICP power of 800 W resulted in the most enhanced reaction, yielding distinctive GaN structures such as pillars with inverted mesa structures for c-plane GaN and a semipolar GaN layer with asymmetric inclined sidewalls. The selectivity and etching rate were also investigated.

  5. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

    Science.gov (United States)

    Okada, N.; Nojima, K.; Ishibashi, N.; Nagatoshi, K.; Itagaki, N.; Inomoto, R.; Motoyama, S.; Kobayashi, T.; Tadatomo, K.

    2017-06-01

    We focused on inductively coupled plasma and reactive ion etching (ICP-RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions. To determine the optimum chemical etching conditions, the flow rates of Ar and Cl2, ICP power, and chamber pressure were varied in the etching of c-plane GaN layers with stripe patterns. It was determined that the combination of Ar and Cl2 flow rates of 100 sccm, chamber pressure of 7 Pa, and ICP power of 800 W resulted in the most enhanced reaction, yielding distinctive GaN structures such as pillars with inverted mesa structures for c-plane GaN and a semipolar GaN layer with asymmetric inclined sidewalls. The selectivity and etching rate were also investigated.

  6. A novel electron-beam-based photomask repair tool

    Science.gov (United States)

    Edinger, Klaus; Becht, Hans; Becker, Rainer; Bert, Volker; Boegli, Volker A.; Budach, Michael; G÷hde, Susanne; Guyot, Jochen; Hofmann, Thorsten; Hoinkis, Ottmar; Kaya, Alexander; Koops, Hans W.; Spies, Petra; Weyrauch, Bernd; Bihr, Johannes

    2003-12-01

    High-resolution electron-beam assisted deposition and etching is an enabling technology for current and future generation photo mask repair. NaWoTec in collaboration with LEO Electron Microscopy has developed a mask repair beta tool capable of processing a wide variety of mask types, such as quartz binary masks, phase shift masks, EUV masks, and e-beam projection stencil masks. Specifications currently meet the 65 nm device node requirements, and tool performance is extendible to 45 nm and below. The tool combines LEO's ultra-high resolution Supra SEM platform with NaWoTec's e-beam deposition and etching technology, gas supply and pattern generation hardware, and repair software. It is expected to ship to the first customer in October this year. In this paper, we present the tool platform, its work flow oriented repair software, and associated deposition and etch processes. Unique features are automatic drift compensation, critical edge detection, and arbitrary pattern copy with automatic placement. Repair of clear and opaque programmed defects on Cr, TaN, and MoSi quartz masks, as well as on SiC and Si stencil masks is demonstrated. We show our development roadmap towards a production tool, which will be available by the end of this year.

  7. Ion beam treatment of functional layers in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wendi

    2013-10-01

    In silicon thin-film solar cells, transparent conductive layers have to fulfill the following requirements: high conductivity as effective contact, high transparency to transmit the light into the cell, and a textured surface which provides light scattering. Magnetron sputtered and wet-chemically textured aluminum doped zinc oxide (ZnO:Al) films are widely used as the transparent conductor. The technological goal of this dissertation is to develop an alternative to the wet etching process for light trapping in the thin silicon absorber layers through modification of the glass/ZnO:Al or ZnO:Al/Si interfaces by ion beam treatment. The study focuses on the textured growth of ZnO:Al films on ion beam pretreated glass substrates, and the preparation and application of textured glass for light trapping. The technological aspects such as the etch rates of the glass substrate and ZnO:Al films with different ion beam configurations were studied. The experimental etch rates are compared with simulated and theoretically predicted values. With regard to the ion beam treatment of glass substrate, the influence of the ion pretreated glass on the growth of ZnO:Al films was investigated. The ZnO:Al films grown on ion beam pretreated glass substrates exhibit self-textured morphology with surface roughness of 40 nm while remaining highly conductive. Silicon thin-film solar cells prepared on the as-grown rough ZnO:Al films show that this front contact can provide excellent light trapping effect. The highest initial efficiencies for amorphous single junction solar cells on as-grown rough ZnO:Al films was 9.4%. The as-grown rough morphology was attributed to large conical ZnO:Al grains initiated from the ion pretreated glass surface. It was found that the roughness of the as-grown rough ZnO:Al film is proportional to the number of O dangling bonds created by ion beam treatment on the glass substrate. A growth model was proposed to explain the growth mechanism of ZnO:Al films on Zn- and

  8. Evaluating replicability of laboratory experiments in economics.

    Science.gov (United States)

    Camerer, Colin F; Dreber, Anna; Forsell, Eskil; Ho, Teck-Hua; Huber, Jürgen; Johannesson, Magnus; Kirchler, Michael; Almenberg, Johan; Altmejd, Adam; Chan, Taizan; Heikensten, Emma; Holzmeister, Felix; Imai, Taisuke; Isaksson, Siri; Nave, Gideon; Pfeiffer, Thomas; Razen, Michael; Wu, Hang

    2016-03-25

    The replicability of some scientific findings has recently been called into question. To contribute data about replicability in economics, we replicated 18 studies published in the American Economic Review and the Quarterly Journal of Economics between 2011 and 2014. All of these replications followed predefined analysis plans that were made publicly available beforehand, and they all have a statistical power of at least 90% to detect the original effect size at the 5% significance level. We found a significant effect in the same direction as in the original study for 11 replications (61%); on average, the replicated effect size is 66% of the original. The replicability rate varies between 67% and 78% for four additional replicability indicators, including a prediction market measure of peer beliefs.

  9. High resolution 100 kV electron beam lithography in SU-8

    DEFF Research Database (Denmark)

    Olsen, Brian Bilenberg; Jakobsen, S.; Schmidt, M.S.

    2006-01-01

    High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrat...

  10. Focused ion beam nano-structuring of photonic Bragg gratings in $Al_2O_3$ waveguides

    NARCIS (Netherlands)

    Uranga, Amaia; Ay, Feridun; Bradley, Jonathan D.B.; Ridder, de René M.; Wörhoff, Kerstin; Pollnau, Markus; Emplit, Ph.; Delqué, M.; Gorza, S.-P.; Kockaart, P.; Leijtens, X.

    2007-01-01

    Focused ion beam (FIB) etching is receiving increasing attention for the fabrication of active integrated optical components such as waveguide amplifiers and lasers. Si-technology compatible low-loss $Al_2O_3$ channel waveguides grown on thermally oxidized silicon substrates have been reported recen

  11. Ion beam extraction from a matrix ECR plasma source by discrete ion-focusing effect

    DEFF Research Database (Denmark)

    Stamate, Eugen; Draghici, Mihai

    2010-01-01

    Positive or negative ion beams extracted from plasma are used in a large variety of surface functionalization techniques such as implantation, etching, surface activation, passivation or oxidation. Of particular importance is the surface treatment of materials sensitive to direct plasma exposure ...

  12. Does active application of universal adhesives to enamel in self-etch mode improve their performance?

    Science.gov (United States)

    Loguercio, Alessandro D; Muñoz, Miguel Angel; Luque-Martinez, Issis; Hass, Viviane; Reis, Alessandra; Perdigão, Jorge

    2015-09-01

    To evaluate the effect of adhesion strategy on the enamel microshear bond strengths (μSBS), etching pattern, and in situ degree of conversion (DC) of seven universal adhesives. 84 extracted third molars were sectioned in four parts (buccal, lingual, proximal) and divided into 21 groups, according to the combination of the main factors adhesive (AdheSE Universal [ADU], All-Bond Universal [ABU], Clearfil Universal [CFU], Futurabond U [FBU], G-Bond Plus [GBP], Prime&Bond Elect (PBE), and Scotchbond Universal Adhesive [SBU]), and adhesion strategy (etch-and-rinse, active self-etch, and passive self-etch). Specimens were stored in water (37°C/24h) and tested at 1.0mm/min (μSBS). Enamel-resin interfaces were evaluated for DC using micro-Raman spectroscopy. The enamel-etching pattern was evaluated under a field-emission scanning electron microscope (direct and replica techniques). Data were analyzed with two-way ANOVA and Tukey's test (α=0.05). Active self-etch application increased μSBS and DC for five out of the seven universal adhesives when compared to passive application (penamel-etching pattern was observed for all universal adhesives in the etch-and-rinse strategy. A slight improvement in etching ability was observed in active self-etch application compared to that of passive self-etch application. Replicas of GBP and PBE applied in active self-etch mode displayed morphological features compatible with water droplets. The DC of GBP and PBE were not affected by the application/strategy mode. In light of the improved performance of universal adhesives when applied actively in SE mode, selective enamel etching with phosphoric acid may not be crucial for their adhesion to enamel. The active application of universal adhesives in self-etch mode may be a practical alternative to enamel etching in specific clinical situations. Copyright © 2015 Elsevier Ltd. All rights reserved.

  13. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    Science.gov (United States)

    Kakati, A.; Maji, D.; Das, S.

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µm thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C16H36FN) and tetra-n-butylammonium fluoride (C5H9NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µm min-1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5-15 gm l-1 of silicic acid (SiO2x H2O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µm etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures.

  14. Adenovirus sequences required for replication in vivo.

    OpenAIRE

    Wang, K.; Pearson, G D

    1985-01-01

    We have studied the in vivo replication properties of plasmids carrying deletion mutations within cloned adenovirus terminal sequences. Deletion mapping located the adenovirus DNA replication origin entirely within the first 67 bp of the adenovirus inverted terminal repeat. This region could be further subdivided into two functional domains: a minimal replication origin and an adjacent auxillary region which boosted the efficiency of replication by more than 100-fold. The minimal origin occup...

  15. Replication Origin Specification Gets a Push.

    Science.gov (United States)

    Plosky, Brian S

    2015-12-03

    During the gap between G1 and S phases when replication origins are licensed and fired, it is possible that DNA translocases could disrupt pre-replicative complexes (pre-RCs). In this issue of Molecular Cell, Gros et al. (2015) find that pre-RCs can be pushed along DNA and retain the ability to support replication.

  16. Exploiting replicative stress to treat cancer

    DEFF Research Database (Denmark)

    Dobbelstein, Matthias; Sørensen, Claus Storgaard

    2015-01-01

    DNA replication in cancer cells is accompanied by stalling and collapse of the replication fork and signalling in response to DNA damage and/or premature mitosis; these processes are collectively known as 'replicative stress'. Progress is being made to increase our understanding of the mechanisms...

  17. Comparison between universal adhesives and two-step self-etch adhesives in terms of dentin bond fatigue durability in self-etch mode.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2017-06-01

    This aim of this study was to compare universal adhesives and two-step self-etch adhesives in terms of dentin bond fatigue durability in self-etch mode. Three universal adhesives - Clearfil Universal, G-Premio Bond, and Scotchbond Universal Adhesive - and three-two-step self-etch adhesives - Clearfil SE Bond, Clearfil SE Bond 2, and OptiBond XTR - were used. The initial shear bond strength and shear fatigue strength of resin composite bonded to adhesive on dentin in self-etch mode were determined. Scanning electron microscopy observations of fracture surfaces after bond strength tests were also made. The initial shear bond strength of universal adhesives was material dependent, unlike that of two-step self-etch adhesives. The shear fatigue strength of Scotchbond Universal Adhesive was not significantly different from that of two-step self-etch adhesives, unlike the other universal adhesives. The shear fatigue strength of universal adhesives differed depending on the type of adhesive, unlike those of two-step self-etch adhesives. The results of this study encourage the continued use of two-step self-etch adhesive over some universal adhesives but suggest that changes to the composition of universal adhesives may lead to a dentin bond fatigue durability similar to that of two-step self-etch adhesives. © 2017 Eur J Oral Sci.

  18. Simultaneous strain and temperature measurement with enhanced intrinsic sensitivity using etched polymer fibre Bragg gratings

    Science.gov (United States)

    Bhowmik, Kishore; Peng, Gang-Ding; Luo, Yanhua; Ambikairajah, Eliathamby; Rajan, Ginu

    2015-09-01

    A PMMA based single-mode polymer optical fibre is etched to different diameter and it is observed that etching can lead to change in the material properties of the fibre such as Young's modulus and thermal expansion coefficient. This can play a vital role in improving the intrinsic sensing capabilities based on etched polymer optical fibre. Thus, exploiting the different strain and temperature sensitivities exhibited by the etched and un-etched polymer FBGs and by using an FBG array, strain and temperature can be measured simultaneously and also with very high sensitivity.

  19. Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching

    Energy Technology Data Exchange (ETDEWEB)

    Fellahi, Ouarda, E-mail: fellahi_warda@yahoo.fr [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Hadjersi, Toufik [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systemes Dynamiques, Universite Ferhat Abbas de Setif (Algeria); Bouanik, Sihem; Manseri, Amar [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria)

    2010-11-01

    The morphology of silicon nanowire (SiNW) layers formed by Ag-assisted electroless etching in HF/H{sub 2}O{sub 2} solution was studied. Prior to the etching, the Ag nanoparticles were deposited on p-type Si(1 0 0) wafers by electroless metal deposition (EMD) in HF/AgNO{sub 3} solution at room temperature. The effect of etching temperature and silicon resistivity on the formation process of nanowires was studied. The secondary ion mass spectra (SIMS) technique is used to study the penetration of silver in the etched layers. The morphology of etched layers was investigated by scanning electron microscope (SEM).

  20. Plasma etching of cavities into diamond anvils for experiments at high pressures and high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Weir, S.T.; Cynn, H.; Falabella, S.; Evans, W.J.; Aracne-Ruddle, C.; Farber, D.; Vohra, Y.K. (LLNL); (UAB)

    2012-10-23

    We describe a method for precisely etching small cavities into the culets of diamond anvils for the purpose of providing thermal insulation for samples in experiments at high pressures and high temperatures. The cavities were fabricated using highly directional oxygen plasma to reactively etch into the diamond surface. The lateral extent of the etch was precisely controlled to micron accuracy by etching the diamond through a lithographically fabricated tungsten mask. The performance of the etched cavities in high-temperature experiments in which the samples were either laser heated or electrically heated is discussed.

  1. Inductive couple plasma reactive ion etching characteristics of TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Garay, Adrian Adalberto; Hwang, Su Min; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Changes in the inductively coupled plasma reactive ion etching characteristics of TiO{sub 2} thin films in response to the addition of HBr, Cl{sub 2} and C{sub 2}F{sub 6} to Ar gas were investigated. As the HBr, Cl{sub 2} and C{sub 2}F{sub 6} concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C{sub 2}F{sub 6} and Cl{sub 2}. Field emission scanning electron microscopy revealed that 25% C{sub 2}F{sub 6} generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C{sub 2}F{sub 6}/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiF{sub x}) over the film. C{sub x}F{sub y} compounds were not detected on the film surface, probably due to contamination with atmospheric carbon. - Highlights: • Reactive ion etching of TiO{sub 2} films under HBr, C{sub 2}F{sub 6}, and Cl{sub 2} gases was studied. • Etch rate and etch profile of TiO{sub 2} films were investigated under each gas chemistry. • The highest degree of anisotropy was achieved at 25% C{sub 2}F{sub 6}/Ar. • Strong etch conditions at 25% C{sub 2}F{sub 6}/Ar increased etch rate and degree of anisotropy. • X-ray photoelectron spectroscopy revealed the existence of F-containing etch residues.

  2. A large Bradbury Nielsen ion gate with flexible wire spacing based on photo-etched stainless steel grids

    CERN Document Server

    Brunner, T; O'Sullivan, K; Simon, M C; Kossick, M; Ettenauer, S; Gallant, A T; Mané, E; Bishop, D; Good, M; Gratta, G; Dilling, J

    2011-01-01

    Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists of two interleaved sets of electrodes. If opposite polarity of the same amplitude is applied the gate is closed, and for identical (zero) potential the gate is open. Whereas former realizations of the device employ actual wires resulting in difficulties with winding, fixing and tensioning them, our approach is to use two grids photo-etched onto a metallic foil. This design allows for simplified construction of gates covering large beam sizes up to at least 900\\,mm$^2$ with variable wire spacing down to 250\\,\\textmu m. By changing the grids the wire spacing can be varied without major changes. A gate of this design was installed and systematically tested at TRIUMF's ion trap facility, TITAN, for use with radioactive beams to separate isobaric contamination of charge states.

  3. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  4. Origins of etch pits in β-Ga2O3(010) single crystals

    Science.gov (United States)

    Hanada, Kenji; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Kasu, Makoto

    2016-12-01

    Etch pits of various shapes were observed on etched β-Ga2O3(010) single crystals and classified into types A-F according to shape. Type-A etch pits changed in shape in the order of types B, C, and D by etching. Groove-shaped pits observed on as-grown β-Ga2O3(010) single crystal surfaces [K. Hanada et al., Jpn. J. Appl. Phys. 55, 030303 (2016)] were classified into type G. Type-G pits, which were determined to be void defects because of three-dimentional spaces in single crystals, existed before etching and changed to type A after etching. Therefore, after etching, void defects must change in shape as follows: Type G → A → B → C → D. The exposed facets change with etching time. Types-E and -F etch pits were observed to be parallelograms and hexagons, respectively. Types-E and -F etch pits must include dislocations along the [010] direction because they did not change in shape after etching.

  5. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  6. Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

    Science.gov (United States)

    Gutsch, Manuela; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

    2014-10-01

    Many efforts were spent in the development of EUV technologies, but from a customer point of view EUV is still behind expectations. In parallel since years maskless lithography is included in the ITRS roadmap wherein multi electron beam direct patterning is considered as an alternative or complementary approach for patterning of advanced technology nodes. The process of multi beam exposures can be emulated by single beam technologies available in the field. While variable shape-beam direct writers are already used for niche applications, the integration capability of e-beam direct write at advanced nodes has not been proven, yet. In this study the e-beam lithography was implemented in the BEoL processes of the 28nm SRAM technology. Integrated 300mm wafers with a 28nm back-end of line (BEoL) stack from GLOBALFOUNDRIES, Dresden, were used for the experiments. For the patterning of the Metal layer a Mix and Match concept based on the sequence litho - etch - litho - etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. E-beam patterning results of BEoL Metal and Via layers are presented using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMS-CNT. Etch results are shown and compared to the POR. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

  7. ION BEAM TECHNOLOGY IN MATERIALS SCIENCE

    Directory of Open Access Journals (Sweden)

    M.B. Dutt

    2009-07-01

    Full Text Available Ion beam processing of materials in general and semiconductors in particular, started with ion implantation in semiconductors; first used by Ohl at Bell Labs in 1952 toimprove the electrical characteristics of silicon point contact diodes by implanting H, He, N and Ar ions.The improvement was obvious but it was caused by surface damage and notthe ion implantation. However, in the process, ion implantation had an entry and slowly it became popular among the scientists and the technocrats. Thus, over the last six decades, demands continued for new and improved materials and devices that has pushed ion implanter to expand to ion beam technology. In the semiconductor industry alone, the processes have evolved so much so that in today’s world, there are morethan 4000 ion implanters in the IC fab lines apart from otherion beam-assisted processing machines. Ion beam deposition techniques, ion beam lithography, ion beam etching, ion beammilling are all ion beam beam-assisted techniques that arebeing extensively used in semiconductor industries. In this backdrop, it was thought that a compilation of uses of allthese techniques together with relevant tools of analysis toserve as a guide to the semiconductor scientists and technologists for a glimpse of the ongoing efforts being madein this direction. Fortunately enough, Indian research is not lagging in use of all these modern day technologies that will be evident as the reader will go from one article to the other of this special volume.Defence Science Journal, 2009, 59(4, pp.328-328, DOI:http://dx.doi.org/10.14429/dsj.59.1530

  8. Reactive ion beam figuring of optical aluminium surfaces

    Science.gov (United States)

    Bauer, Jens; Frost, Frank; Arnold, Thomas

    2017-03-01

    Ultra-smooth and arbitrarily shaped reflective optics are necessary for further progress in EUV/XUV lithography, x-ray and synchrotron technology. As one of the most important technological mirror optic materials, aluminium behaves in a rather difficult way in ultra-precision machining with such standard techniques as diamond-turning and subsequent ion beam figuring (IBF). In particular, in the latter, a strong surface roughening is obtained. Hence, up to now it has not been possible to attain the surface qualities required for UV or just visible spectral range applications. To overcome the limitations mainly caused by the aluminium alloy structural and compositional conditions, a reactive ion beam machining process using oxygen process gas is evaluated. To clarify the principle differences in the effect of oxygen gas contrary to oxygen ions on aluminium surface machining, we firstly focus on chemical-assisted ion beam etching (CAIBE) and reactive ion beam etching (RIBE) experiments in a phenomenological manner. Then, the optimum process route will be explored within a more quantitative analysis applying the concept of power spectral density (PSD) for a sophisticated treatment of the surface topography. Eventually, the surface composition is examined by means of dynamic secondary ion mass spectrometry (SIMS) suggesting a characteristic model scheme for the chemical modification of the aluminium surface during oxygen ion beam machining. Monte Carlo simulations were applied to achieve a more detailed process conception.

  9. A new etch-aware after development inspection (ADI) technique for OPC modeling

    Science.gov (United States)

    Xue, Jing; Huang, Jason; Kazarian, Aram; Falch, Brad

    2010-04-01

    This paper presents a new etch-aware after development inspection (ADI) model with an inverse etch bias filter. We model the etch bias as a function of pattern geometry parameters, and we introduce it to the ADI model by means of an inverse bias matrix that works in conjunction with an ADI specification related matrix. The inverse bias filter tunes the ADI model to be highly correlated to the etch effects and provides simplified and designable inputs to the after etch inspection (AEI) model and hence improves its performance over the staged modeling flow. In addition, the inverse bias filter creates a model based rule table for design retargeting. Some of the etch effects are corrected by the inverse bias filter as the lithography model is calibrated, thus speeding up and simplifying the etch AEI model, while maintaining lithography ADI model with a good accuracy.

  10. EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns

    Science.gov (United States)

    Kim, Seo Min; Koo, Sunyoung; Park, Jun-Taek; Lim, Chang-Moon; Kim, Myoungsoo; Ahn, Chang-Nam; Fumar-Pici, Anita; Chen, Alek C.

    2014-04-01

    Experimental local CD uniformity (LCDU) of the dense contact-hole (CH) array pattern is statistically decomposed into stochastic noise, mask component, and metrology factor. Each component are compared quantitatively, and traced after etching to find how much improvement can be achieved by smoothing. Etch CDU gain factor is defined as the differential of etch CD by resist CD, and used to estimate etch CDU on resist CDU. Stochastic noise has influenced on not only LCDU but also local placement error (LPE) of each contact-hole. This LPE is also decomposed into its constituents in the same statistical way. As a result, stochastic noise is found to be the most dominant factor on LCDU and LPE. Etch LCDU is well expected by Etch Gain factor, but LPE seems to be kept same after etching. Fingerprints are derived from the repeating component and the boundary size for excluding proximity effect in analysis is investigated.

  11. Replication of micro and nano surface geometries

    DEFF Research Database (Denmark)

    Hansen, Hans Nørgaard; Hocken, R.J.; Tosello, Guido

    2011-01-01

    : manufacture of net-shape micro/nano surfaces, tooling (i.e. master making), and surface quality control (metrology, inspection). Replication processes and methods as well as the metrology of surfaces to determine the degree of replication are presented and classified. Examples from various application areas...... are given including replication for surface texture measurements, surface roughness standards, manufacture of micro and nano structured functional surfaces, replicated surfaces for optical applications (e.g. optical gratings), and process chains based on combinations of repeated surface replication steps....

  12. Replication of prions in differentiated muscle cells.

    Science.gov (United States)

    Herbst, Allen; Aiken, Judd M; McKenzie, Debbie

    2014-01-01

    We have demonstrated that prions accumulate to high levels in non-proliferative C2C12 myotubes. C2C12 cells replicate as myoblasts but can be differentiated into myotubes. Earlier studies indicated that C2C12 myoblasts are not competent for prion replication. (1) We confirmed that observation and demonstrated, for the first time, that while replicative myoblasts do not accumulate PrP(Sc), differentiated post-mitotic myotube cultures replicate prions robustly. Here we extend our observations and describe the implication and utility of this system for replicating prions.

  13. Nitridation of silicon by nitrogen neutral beam

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Yasuhiro, E-mail: yasuhirohara2002@yahoo.co.jp [Organization for Research and Development of Innovative Science and Technology, Kansai University, Yamate-cho 3-3-35, Suita 564-8680, Osaka (Japan); Shimizu, Tomohiro; Shingubara, Shoso [Department of Mechanical Engineering, Faculty of Engineering Science, Kansai University, Yamate-cho 3-3-35, Suita 564-8680, Osaka (Japan)

    2016-02-15

    Graphical abstract: - Highlights: • Nitrided silicon was formed by nitrogen neutral beam at room temperature. • Si{sub 3}N{sub 4} layer was formed at the acceleration voltage more than 20 V. • Formed Si{sub 3}N{sub 4} layer show the effective as the passivation film in the wet etching process. - Abstract: Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si{sub 3}N{sub 4} layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si{sub 3}N{sub 4} layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

  14. Continuous flow ink etching for direct micropattern of silicon dioxide

    Science.gov (United States)

    Xing, Jiyao; Rong, Weibin; Wang, Lefeng; Sun, Lining

    2016-07-01

    A continuous flow ink etching (CFIE) method is presented to directly create micropatterns on a 60 nm thick silicon dioxide (SiO2) layer. This technique employs a micropipette filled with potassium bifluoride (KHF2) aqueous solution to localize SiO2 dissolution in the vicinity of the micropipette tip. Both dot and line features with well-defined edges were fabricated and used as hardmasks for silicon etching. The linear density of etchant ink deposited on the SiO2 can be used to regulate the depth, width and 2D morphology of the line pattern. The characterization of CFIE including the resolution (about 4 μm), reproducibility and capability to form complex structures are reported. This technique provides a simple and flexible alternative to generate the SiO2 hardmask for silicon microstructure fabrication.

  15. Tobacco Etch Virus protease: A shortcut across biotechnologies.

    Science.gov (United States)

    Cesaratto, Francesca; Burrone, Oscar R; Petris, Gianluca

    2016-08-10

    About thirty years ago, studies on the RNA genome of Tobacco Etch Virus revealed the presence of an efficient and specific protease, called Tobacco Etch Virus protease (TEVp), that was part of the Nuclear Inclusion a (NIa) enzyme. TEVp is an efficient and specific protease of 27kDa that has become a valuable biotechnological tool. Nowadays TEVp is a unique endopeptidase largely exploited in biotechnology from industrial applications to in vitro and in vivo cellular studies. A number of TEVp mutants with different rate of cleavage, stability and specificity have been reported. Similarly, a panel of different target cleavage sites, derived from the canonical ENLYFQ-G/S site, has been established. In this review we describe these aspects of TEVp and some of its multiple applications. A particular focus is on the use and molecular biology of TEVp in living cells and organisms.

  16. Random and Uniform Reactive Ion Etching Texturing of Si

    Energy Technology Data Exchange (ETDEWEB)

    Zaidi, S.H.

    1999-04-01

    The performance of a solar cell is critically dependent on absorption of incident photons and their conversion into electrical current. This report describes research efforts that have been directed toward the use of nanoscale surface texturing techniques to enhance light absorption in Si. This effort has been divided into two approaches. The first is to use plasma-etching to produce random texturization on multicrystalline Si cells for terrestrial use, since multicrystalline Si cannot be economically textured in any other way. The second approach is to use interference lithography and plasma-etching to produce gettering structures on Si cells for use in space, so that long-wavelength light can be absorbed close to the junction and make the cells more resistant to cosmic radiation damage.

  17. Selective laser etching or ablation for fabrication of devices

    KAUST Repository

    Buttner, Ulrich

    2017-01-12

    Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can be used to fabricate a variety of features, including an electrode, an interconnect, a channel, a reservoir, a contact hole, a trench, a pad, or a combination thereof. A variety of devices fabricated according to the methods are also provided. In some aspects, capacitive humidity sensors are provided that can be fabricated according to the provided methods. The capacitive humidity sensors can be fabricated with intricate electrodes, e.g. having a fractal pattern such as a Peano curve, a Hilbert curve, a Moore curve, or a combination thereof.

  18. Etch selectivity of a wet chemical formulation for premetal cleaning

    Science.gov (United States)

    Epton, Jeremy W.; Jarrett, Deborah L.; Doohan, Ian J.

    2001-04-01

    This paper examines the relative etching rates of doped and thermal silicon dioxide when using NSSL etchant, comprising of a mixture of ammonium fluoride, water and ammonium dihydrogen phosphate [(NH4)H2PO4] and investigates their dependence on both temperature and mixture composition. The possible reaction mechanism is discussed and compared with the known mechanism for standard buffered oxide etchants (BOE). The observed etch selectivity and mechanisms of BOE and NSSL are also compared with the behavior of a third chemical formulation, referred to as mixed oxide etchant, which comprises of ammonium fluoride (NH4F) solution, diammonium hydrogen phosphate [(NH4)2HPO4] and orthophosphoric acid (H3PO4). It is concluded that no major change in oxide selectivity is observed if either BOE or NSSL etchants are used in the metal pre-clean process.

  19. Preparation of Electrode Array by Electrochemical Etching Based on FEM

    Institute of Scientific and Technical Information of China (English)

    Minghuan WANG; Di ZHU; Lei WANG

    2008-01-01

    Process technology of multiple cylindrical micro-pins by wire-electrical discharge machining (wire-EDM) and electrochemical etching was presented.A row of rectangular micro-columns were machined by wire-EDM and then machined into cylindrical shape by electrochemical etching.However,the shape of the multiple electrodes and the consistent sizes of the electrodes row are not easy to be controlled.In the electrochemical process,the shape of the cathode electrode determines the current density distribution on the anode and so the forming of multiple electrodes.This paper proposes a finite element method (FEM) to accurately optimize the electrode profile.The microelectrodes row with uniformity diameters with size from hundreds micrometers to several decades could be fabricated,and mathematical model controlling the shape and diameter of multiple microelectrodes was provided.Furthermore,a good agreement between experimental and theoretical results was confirmed.

  20. Analysis of etching at a solid-solid interface

    Science.gov (United States)

    Alves, Washington S.; Rodrigues, Evandro A.; Fernandes, Henrique A.; Mello, Bernardo A.; Oliveira, Fernando A.; Costa, Ismael V. L.

    2016-10-01

    We present a method to derive an analytical expression for the roughness of an eroded surface whose dynamics are ruled by cellular automaton. Starting from the automaton, we obtain the time evolution of the height average and height variance (roughness). We apply this method to the etching model in 1 +1 dimensions, and then we obtain the roughness exponent. Using this in conjunction with the Galilean invariance we obtain the other exponents, which perfectly match the numerical results obtained from simulations. These exponents are exact, and they are the same as those exhibited by the Kardar-Parisi-Zhang (KPZ) model for this dimension. Therefore, our results provide proof for the conjecture that the etching and KPZ models belong to the same universality class. Moreover, the method is general, and it can be applied to other cellular automata models.

  1. Fabrication of metal suspending nanostructures by nanoimprint lithography (NIL) and isotropic reactive ion. etching (RIE)

    Institute of Scientific and Technical Information of China (English)

    XIE GuoYong; ZHANG Jin; ZHANG YongYi; ZHANG YingYing; ZHU Tao; LIU ZhongFan

    2009-01-01

    We report herein e rational approach for fabricating metal suspending nanostructures by nanoimprint lithography (NIL) and isotropic reactive ion etching (RIE). The approach comprises three principal steps:(1) mold fabrication, (2) structure replication by NIL, and (3) suspending nanostructures creation by isotropic RIE. Using this approach, suspending nanostructures with Au, Au/Ti or Ti/Au bilayers, and Au/TilAu sandwiched structures are demonstrated. For Au nanostructures, straight suspending nanostructurea can be obtained when the thickness of Au film is up to 50 nm for nano-bridge and 90 nm for nano-finger patterns. When the thickness of Au is below 50 nm for nano-bridge and 90 nm for nano-finger, the Au suspending nanostructures bend upward as a result of the mismatch of thermal expansion between the thin Au films and Si substrate. This leads to residual stresses in the thin Au films. For Au/Ti or Ti/Au bilayers nanostructures, the cantilevers bend toward Au film, since Au has a larger thermal expansion coefficient than that of Ti. While in the case of sandwich structures, straight suspending nanostructures are obtained, this may be due to the balance of residual stress between the thin films.

  2. DNA replication stress: causes, resolution and disease.

    Science.gov (United States)

    Mazouzi, Abdelghani; Velimezi, Georgia; Loizou, Joanna I

    2014-11-15

    DNA replication is a fundamental process of the cell that ensures accurate duplication of the genetic information and subsequent transfer to daughter cells. Various pertubations, originating from endogenous or exogenous sources, can interfere with proper progression and completion of the replication process, thus threatening genome integrity. Coordinated regulation of replication and the DNA damage response is therefore fundamental to counteract these challenges and ensure accurate synthesis of the genetic material under conditions of replication stress. In this review, we summarize the main sources of replication stress and the DNA damage signaling pathways that are activated in order to preserve genome integrity during DNA replication. We also discuss the association of replication stress and DNA damage in human disease and future perspectives in the field. Copyright © 2014 The Authors. Published by Elsevier Inc. All rights reserved.

  3. Replication Stress: A Lifetime of Epigenetic Change

    Directory of Open Access Journals (Sweden)

    Simran Khurana

    2015-09-01

    Full Text Available DNA replication is essential for cell division. Challenges to the progression of DNA polymerase can result in replication stress, promoting the stalling and ultimately collapse of replication forks. The latter involves the formation of DNA double-strand breaks (DSBs and has been linked to both genome instability and irreversible cell cycle arrest (senescence. Recent technological advances have elucidated many of the factors that contribute to the sensing and repair of stalled or broken replication forks. In addition to bona fide repair factors, these efforts highlight a range of chromatin-associated changes at and near sites of replication stress, suggesting defects in epigenome maintenance as a potential outcome of aberrant DNA replication. Here, we will summarize recent insight into replication stress-induced chromatin-reorganization and will speculate on possible adverse effects for gene expression, nuclear integrity and, ultimately, cell function.

  4. Micro-strip metal detector for the beam profile monitoring

    Science.gov (United States)

    Pugatch, V.; Borysova, M.; Mykhailenko, A.; Fedorovitch, O.; Pylypchenko, Y.; Perevertaylo, V.; Franz, H.; Wittenburg, K.; Schmelling, M.; Bauer, C.

    2007-10-01

    The Micro-strip Metal Detector (MMD) design and production technology, readout electronics as well as areas of applications are described. The MMD was designed for beam profile monitoring of charged particle and synchrotron radiation beams. Using photolithography and plasma-chemistry etching technologies we succeeded in creating detectors with a metal strip's thickness of less than 2 μm and without any other materials in the working area. The principle of operation is based on the Secondary Electron Emission (SEE). The results obtained with the MMD at the monochromatic synchrotron radiation beam at HASYLAB (DESY) are also presented. The current version of the MMD allows measuring a beam profile and position with an accuracy of 20 μm.

  5. Micro-strip metal detector for the beam profile monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Pugatch, V.; Borysova, M. [Kyiv Institute for Nuclear Research, Kyiv (Ukraine); Mykhailenko, A. [Kyiv Institute for Nuclear Research, Kyiv (Ukraine)], E-mail: mykhailenko@kinr.kiev.ua; Fedorovitch, O.; Pylypchenko, Y. [Kyiv Institute for Nuclear Research, Kyiv (Ukraine); Perevertaylo, V. [Institute of Micro Devices, Kyiv (Ukraine); Franz, H.; Wittenburg, K. [Deutsches Elektronen-Synchrotron, Hamburg (Germany); Schmelling, M.; Bauer, C. [Max-Planck-Institute for Nuclear Physics, Heidelberg (Germany)

    2007-10-21

    The Micro-strip Metal Detector (MMD) design and production technology, readout electronics as well as areas of applications are described. The MMD was designed for beam profile monitoring of charged particle and synchrotron radiation beams. Using photolithography and plasma-chemistry etching technologies we succeeded in creating detectors with a metal strip's thickness of less than 2{mu}m and without any other materials in the working area. The principle of operation is based on the Secondary Electron Emission (SEE). The results obtained with the MMD at the monochromatic synchrotron radiation beam at HASYLAB (DESY) are also presented. The current version of the MMD allows measuring a beam profile and position with an accuracy of 20{mu}m.

  6. Low-Power Optically Controlled Patch Antenna of Reconfigurable Beams

    Directory of Open Access Journals (Sweden)

    Deshuang Zhao

    2014-01-01

    Full Text Available A novel compact beam-reconfigurable patch antenna based on light control of no more than 30 mW optical powers is successfully demonstrated. It consists of one T-shape driven patch and one slot-etched parasitic patch. A silicon dice is employed as the photoconductive switch that is bridged across the slot center for optical control of reconfigurable beams. The antenna greatly reduces the total optical powers required for reconfigurable beams. Such design is based on the fact that the current phase change of the parasitic patch is sensitive to the conductivity of the silicon dice. A few conductivity changes of the silicon dice induced by the optical light can lead to a big phase change of the parasitic patch currents, eventually resulting in reconfigurable beams with low optical power requirement.

  7. Production of Porous ZnSe by Electrochemical Etching Method

    Directory of Open Access Journals (Sweden)

    А.F. Dyadenchuk

    2013-10-01

    Full Text Available Here we describe the production features of a porous layer on the surface of n-type single-crystalline zinc selenide. The surface structure is investigated and the photomicrographs of porous layers of the treated ZnSe crystal are represented. Process of the mosaic structure formation depending on the etching time is considered. The value of the flat-band potential with respect to the used electrolyte is calculated.

  8. Microelectrode array fabrication by electrical discharge machining and chemical etching.

    Science.gov (United States)

    Fofonoff, Timothy A; Martel, Sylvain M; Hatsopoulos, Nicholas G; Donoghue, John P; Hunter, Ian W

    2004-06-01

    Wire electrical discharge machining (EDM), with a complementary chemical etching process, is explored and assessed as a method for developing microelectrode array assemblies for intracortically recording brain activity. Assembly processes based on these methods are highlighted, and results showing neural activity successfully recorded from the brain of a mouse using an EDM-based device are presented. Several structures relevant to the fabrication of microelectrode arrays are also offered in order to demonstrate the capabilities of EDM.

  9. Geopolymerisation of fly ashes with waste aluminium anodising etching solutions.

    Science.gov (United States)

    Ogundiran, M B; Nugteren, H W; Witkamp, G J

    2016-10-01

    Combined management of coal combustion fly ash and waste aluminium anodising etching solutions using geopolymerisation presents economic and environmental benefits. The possibility of using waste aluminium anodising etching solution (AES) as activator to produce fly ash geopolymers in place of the commonly used silicate solutions was explored in this study. Geopolymerisation capacities of five European fly ashes with AES and the leaching of elements from their corresponding geopolymers were studied. Conventional commercial potassium silicate activator-based geopolymers were used as a reference. The geopolymers produced were subjected to physical, mechanical and leaching tests. The leaching of elements was tested on 28 days cured and crushed geopolymers using NEN 12457-4, NEN 7375, SPLP and TCLP leaching tests. After 28 days ambient curing, the geopolymers based on the etching solution activator showed compressive strength values between 51 and 84 MPa, whereas the commercial potassium silicate based geopolymers gave compressive strength values between 89 and 115 MPa. Based on the regulatory limits currently associated with the used leaching tests, all except one of the produced geopolymers (with above threshold leaching of As and Se) passed the recommended limits. The AES-geopolymer geopolymers demonstrated excellent compressive strength, although less than geopolymers made from commercial activator. Additionally, they demonstrated low element leaching potentials and therefore can be suitable for use in construction works. Copyright © 2016. Published by Elsevier Ltd.

  10. Effect of surface etching on condensing heat transfer

    Energy Technology Data Exchange (ETDEWEB)

    Seok, Sung Chul; Park, Jae Won; Jung, Jiyeon; Choi, Chonggun; Choi, Gyu Hong; Hwang, Seung Sik; Chung, Tae Yong; Shin, Donghoon [Kookmin University, Seoul (Korea, Republic of); Kim, Jin Jun [Hoseo University, Asan (Korea, Republic of)

    2016-02-15

    This study conducted experiments on humid air condensation during heat transfer in an air preheating exchanger attached to a home condensing boiler to improve thermal efficiency. An etchant composed of sulfuric acid and sodium nitrate was used to create roughness on the heat exchanger surface made from STS430J1L. A counter flow heat exchanger was fabricated to test the performance of heat transfer. Results showed that the overall heat transfer coefficients of all specimens treated with etchant improved with respect to the original specimens (not treated with etchant), and the overall heat transfer coefficient of the 60 s etching specimen increased by up to 15%. However, the increasing rate of the heat transfer coefficient was disproportional to the etching time. When the etching time specifically increased above 60 s, the heat transfer coefficient decreased. This effect was assumed to be caused by surface characteristics such as contact angle. Furthermore, a smaller contact angle or higher hydrophilicity leads to higher heat transfer coefficient.

  11. Giacomo Quarenghi engraver. An etching representing the Salara in Rome

    Directory of Open Access Journals (Sweden)

    Piervaleriano Angelini

    2014-12-01

    Full Text Available In 2007, the Rijksmuseum in Amsterdam acquired an engraving of the Italian architect and draftsman Giacomo Quarenghi (1744-1817 for its collection. This etching, mentioned by G.K. Nagler in his Neues Allgemeines Kunstler-Lexicon ... (twelfth volume, 1842, pp. 150-151, had gone missing and no copy of it had been found in modern times. It is presented with the title A view of Porta Salaria, in accordance with the subject that has been recognized in the drawing by Quarenghi in Album I-22 of the Public Library of Bergamo, and which can be considered the origin of the engraved image. The analysis of the etching, now in Amsterdam, has stimulated a careful evaluation of the subject of the view (both designed and engraved, allowing us to recognize it not as Porta Salaria, but The Salara in Rome, the ancient salt repository which once existed near S. Maria in Cosmedin. The study of the engraving of the Rijksmuseum, apart from the iconographic clarification, invites us to explore the little known topic concerning the direct, personal experience, albeit episodic, of Quarenghi with the medium of etching, and the meaning of this artistic practice for its author, and in the context of the culture of his time.

  12. Kinetics of faceting of crystals in growth, etching, and equilibrium

    Science.gov (United States)

    Vlachos, D. G.; Schmidt, L. D.; Aris, R.

    1993-03-01

    The faceting of crystals in equilibrium with the gas phase and also during crystal growth and etching conditions is studied using the Monte Carlo method. The dynamics of the transformation of unstable crystallographic orientations into hill and valley structures and the spatial patterns that develop are examined as functions of surface temperature, crystallographic orientation, and strength of interatomic potential for two transport processes: adsorption-desorption and surface diffusion. The results are compared with the continuum theory for facet formation. Thermodynamically unstable orientations break into hill and valley structures, and faceting exhibits three time regimes: disordering, facet nucleation, and coarsening of small facets to large facets. Faceting is accelerated as temperature increases, but thermal roughening can occur at high temperatures. Surface diffusion is the dominant mechanism at short times and small facets but adsorption-desorption becomes important at long times and large facets. Growth and etching promote faceting for conditions close to equilibrium but induce kinetic roughening for conditions far from equilibrium. Simultaneous irreversible growth and etching conditions with fast surface diffusion result in enhanced faceting.

  13. Etching and Chemical Control of the Silicon Nitride Surface.

    Science.gov (United States)

    Brunet, Marine; Aureau, Damien; Chantraine, Paul; Guillemot, François; Etcheberry, Arnaud; Gouget-Laemmel, Anne Chantal; Ozanam, François

    2017-01-25

    Silicon nitride is used for many technological applications, but a quantitative knowledge of its surface chemistry is still lacking. Native oxynitride at the surface is generally removed using fluorinated etchants, but the chemical composition of surfaces still needs to be determined. In this work, the thinning (etching efficiency) of the layers after treatments in HF and NH4F solutions has been followed by using spectroscopic ellipsometry. A quantitative estimation of the chemical bonds found on the surface is obtained by a combination of infrared absorption spectroscopy in ATR mode, X-ray photoelectron spectroscopy, and colorimetry. Si-F bonds are the majority species present at the surface after silicon nitride etching; some Si-OH and a few Si-NHx bonds are also present. No Si-H bonds are present, an unfavorable feature for surface functionalization in view of the interest of such mildly reactive groups for achieving stable covalent grafting. Mechanisms are described to support the experimental results, and two methods are proposed for generating surface SiH species: enriching the material in silicon, or submitting the etched surface to a H2 plasma treatment.

  14. Overview of atomic layer etching in the semiconductor industry

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  15. Inactivation of Matrix-bound MMPs by Cross-linking Agents in Acid Etched Dentin

    Science.gov (United States)

    Scheffel, Débora Lopes Salles; Hebling, Josimeri; Scheffel, Régis Henke; Agee, Kelly A.; Turco, Gianluca; de Souza Costa, Carlos Alberto; Pashley, David H.

    2014-01-01

    Objectives Published TEM analysis of in vivo resin-dentin bonds shows that in 44 months almost 70% of collagen fibrils from the hybrid layer disappear. Matrix metalloproteinases (MMPs) play an important role in that process and are thought to be the main factor responsible for the solubitization of dentin collagen. Therefore, this study aimed to evaluate the inactivation of matrix-bound MMPs by carbodiimide (EDC) or proanthocyanidin (PA) both cross-linking agents, or the MMP-inhibitor, chlorhexidine (CHX), on acid-etched dentin using a simplified MMP assay method. Methods Dentin beams (1×1×6mm) were obtained from mid-coronal dentin of sound third molars and randomly divided into 6 groups (G) according to the dentin treatment: G1: Deionized water (control), G2: 0.1M EDC, G3: 0.5M EDC, G4: 0.5M EDC+35% HEMA, G5: 5% Proanthocyanidin (PA) and G6: 2% CHX. The beams were etched for 15s with 37% phosphoric acid, rinsed and then immersed for 60s in one of the treatment solutions. The total MMP activity of dentin was analyzed for 1 h by colorimetric assay (Sensolyte). Data were submitted to Wilcoxon non-parametric test and Mann-Whitney tests (p>0.05). Results All experimental cross-linking solutions significantly reduced MMP activity compared to control, except 0.1M EDC (53.6% ±16.1). No difference was observed between cross-linking agents and 2% CHX 0.5M EDC + 35% HEMA (92.3% ±8.0) was similar to 0.5M EDC (89.1% ±6.4), 5% PA (100.8% ±10.9) and 2% CHX (83.4% ±10.9). Conclusion Dentin treatment with cross-linking agents is effective to significantly reduce MMP activity. Mixing 0.5M EDC and 35% HEMA did not influence EDC inhibitor potential. PMID:23786610

  16. The effect of caries excavation methods on the bond strength of etch-and-rinse and self-etch adhesives to caries affected dentine.

    Science.gov (United States)

    Aggarwal, V; Singla, M; Yadav, S; Yadav, H

    2013-12-01

    The aim of this study was to evaluate the influence of chemomechanical caries removal and conventional caries excavation on the microtensile bond strength of three different dentine adhesive systems. Thirty extracted human mandibular molars with radiographic signs of dental caries extending up to the middle third of dentine were sectioned longitudinally through the centre of the carious lesion in a buccolingual direction to yield two sections. One half of each tooth was excavated by tungsten carbide bur and the other half was chemomechanically treated with Carisolv(®) . Three dentine bonding systems: an etch-and-rinse single bottle adhesive (Single Bond, 3M ESPE); a two bottle, two-step self-etch bonding system (One Coat Self Etching Bond, Coltene Whaledent); and a single-step, single bottle self-etch adhesive (Adper Easy Bond Self-Etch Adhesive, 3M ESPE) were applied and composite build-up was done. The specimens were tested for microtensile bond strength. Data were analysed using two-way analysis of variance and pair-wise multiple comparisons were done using the Holm-Sidak method. The etch-and-rinse adhesive and two bottle self-etch system showed significantly higher bond strength than the single bottle self-etch system. Caries excavation method had no influence on bond strength values. Carisolv(®) did not affect the microtensile bond strength values of different adhesive systems tested to the caries affected dentine. © 2013 Australian Dental Association.

  17. Atomic layer etchings of transition metal dichalcogenides with post healing procedures: equivalent selective etching of 2D crystal hetero-structures

    Science.gov (United States)

    Chen, Kuan-Chao; Chu, Tung-Wei; Wu, Chong-Rong; Lee, Si-Chen; Lin, Shih-Yen

    2017-09-01

    The atomic layer etchings of molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are demonstrated in this paper. By using the oxygen plasma etching and the following re-sulfurization procedures, a mono-layer MoS2 sample with an enhanced photoluminescence intensity is obtained from the sample originally with bi-layer MoS2, which suggests that atomic layer etching of MoS2 can be achieved and the following re-sulfurization procedure can recover the partially oxidized MoS2 remained on the substrate back to a complete MoS2 film. By repeating oxygen plasma etchings and a final re-sulfurization procedure, multi-layer WS2 can be selectively etched off from the WS2/MoS2 hetero-structure. A top-gate WS2/MoS2 hetero-structure transistor is fabricated with source/drain electrodes contacted directly to the MoS2 channel by using the repeated atomic layer etching technique. The results have revealed that the equivalent selective etching effect for 2D crystal hetero-structures can be achieved by repeating the atomic layer etching procedure, which is an important step for the device fabrication of 2D crystal hetero-structures.

  18. InGaN/GaN DFB laser diodes at 434 nm with deeply etched sidewall gratings

    Science.gov (United States)

    Slight, Thomas J.; Odedina, Opeoluwa; Meredith, Wyn; Docherty, Kevin E.; Kelly, Anthony E.

    2016-02-01

    We report on deeply etched sidewall grating DFB lasers in the InGaN/GaN material system emitting at a single wavelength around 434 nm. GaN lasers have a wide range of applications in communications, displays and storage. The availability of a single wavelength device with a good side mode suppression ratio (SMSR) would allow further applications to be addressed such as sources for laser cooling and Fraunhofer line operation for solar background free communications. Sidewall etched gratings have the advantage of fabrication with no need for overgrowth and have been demonstrated in a range of other material systems and wavelengths. Importantly for GaN based devices, this design has the potential to minimise fabrication induced damage to the epi structure. We investigated two laser designs, one with 80 % duty-cycle 3rd order gratings and another with 39th order partial gratings. Simulation of the 2D waveguide sections was carried out to find the optimal grating width. For fabrication, the laser ridge and gratings were patterned in a single step using electron beam lithography and ICP etched to a depth of 500 nm. Contact metal was deposited and the sample thinned and cleaved into 1 mm long cavities. The as-cleaved 3rd order lasers emit in the pulsed regime with a SMSR of 20 dB and a peak single-mode output power of 40 mW. The output power is similar to that of parallel processed FP lasers. The 39th order lasers also exhibit narrow spectral width at an output power of 10 mW.

  19. Ethanol-wet bonding technique may enhance the bonding performance of contemporary etch-and-rinse dental adhesives.

    Science.gov (United States)

    Li, Fang; Liu, Xiao-Yang; Zhang, Ling; Kang, Jun-Jun; Chen, Ji-Hua

    2012-04-01

    To determine whether bonds of contemporary etch-and-rinse adhesives made with ethanol-wet bonding are stronger and more durable than those made with water-wet bonding, and to explore the possible reasons for the bonding results. Flat surfaces of midcoronal dentin were made in extracted human third molars. The dentin surfaces were randomized into 6 groups according to bonding techniques (water- vs ethanol-wet bonding) and dental adhesives [Single Bond 2 (SB), Prime Bond NT (PB), and Gluma Comfort Bond (GB)]. After etching and rinsing, dentin surfaces were either left water-moist or immersed in ethanol. Following adhesive application and composite buildups, the bonded teeth were sectioned into beams for microtensile bond strength evaluation with or without NaOCl challenge. The morphology of the hybrid layer was analyzed with SEM. The wettability of water- vs. ethanol-saturated dentin was evaluated. The concentrations of non-volatile ingredients in the adhesives were compared. Compared to water-wet bonding, ethanol-wet bonding yielded similar (p > 0.05 for PB and GB) or higher (p adhesives), and produced more even hybrid layers. Moreover, ethanol-saturated dentin exhibited a lower contact angle than water-saturated specimens, and the concentrations of non-volatile ingredients of the adhesives decreased in the order of SB > GB > PB. Ethanol-wet bonding could improve the bonding efficacy of contemporary etch-and-rinse adhesives, probably due to the good wettability of ethanol-saturated dentin and the structure of the hybrid layer. Moreover, this positive effect of ethanol-wet bonding might be influenced by the composition of adhesives.

  20. STUDY ON THE EFFECTS OF ACID ETCHING ON AFFECTED ENAMEL

    Directory of Open Access Journals (Sweden)

    Simona Stoleriu

    2011-12-01

    Full Text Available The purpose of the study was to establish and compare the effects of ortophosphoric and hydrochloric acids on the enamel affected by incipient carious lesions with different evolution. Materials and method. 20 teeth with acute and chronic non-cavitary carious lesions were considered for the study. The teeth were sectioned in two halves through the middle of the non-cavitary lesions. The halves of 5 white spot-type lesions and of 5 brown spot-type ones were analyzed as to their surface roughness, on an atomic force microscope (AFM. 5 halves with white spot-type lesions and 5 halves with brown spot-type ones were subjected to acid etching with 37% ortophosphoric acid (Scotchbond etchant gel, 3M ESPE, and an equal number of samples was subjected to the action of 15% hydrochloric acid (ICON-etch, DMG Dental Products Ltd for 2 min, then washed with water and analyzed by AFM. Results. The initial surface roughness of the enamel was higher in the white spot–type carious lesions, comparatively with the brown spot-type ones. For both types of carious non-cavitary lesions, acid etching with phosphoric and hydrochloric acid significantly increased the surface roughness of the enamel, comparatively with the status of the enamel surface prior to etching. The hydrochloric acid led to a surface roughness significantly higher than in the case of ortophosphoric acid, in both acute and chronic non-cavitary carious lesions. The roughness values obtained through etching with ortophosphoric and hydrochloric acid were higher in the white spot-type carious lesions, comparatively with the brown spot-type ones. Conclusions. Both the 37% ortophosphoric acid and the 15% hydrochloric acid determined a significantly higher surface roughness of the enamel affected by acute and chronic non-cavitary carious lesions. The surface condition of the brown spot-type carious lesions was less significantly modified, comparatively with that of the white spot-type lesions, by the

  1. Shear bond strength of self-etch and total-etch bonding systems at different dentin depths

    Directory of Open Access Journals (Sweden)

    Ana Carolina Maito Villela-Rosa

    2011-04-01

    Full Text Available The purpose of this study was to evaluate the dentin shear bond strength of four adhesive systems (Adper Single Bond 2, Adper Prompt L-Pop, Magic Bond DE and Self Etch Bond in regards to buccal and lingual surfaces and dentin depth. Forty extracted third molars had roots removed and crowns bisected in the mesiodistal direction. The buccal and lingual surfaces were fixed in a PVC/acrylic resin ring and were divided into buccal and lingual groups assigned to each selected adhesive. The same specimens prepared for the evaluation of superficial dentin shear resistance were used to evaluate the different depths of dentin. The specimens were identified and abraded at depths of 0.5, 1.0, 1.5 and 2.0 mm. Each depth was evaluated by ISO TR 11405 using an EMIC-2000 machine regulated at 0.5 mm/min with a 200 Kgf load cell. We performed statistical analyses on the results (ANOVA, Tukey and Scheffé tests. Data revealed statistical differences (p < 0.01 in the adhesive and depth variation as well as adhesive/depth interactions. The Adper Single Bond 2 demonstrated the highest mean values of shear bond strength. The Prompt L-Pop product, a self-etching adhesive, revealed higher mean values compared with Magic Bond DE and Self Etch Bond adhesives, a total and self-etching adhesive respectively. It may be concluded that the shear bond strength of dentin is dependent on material (adhesive system, substrate depth and adhesive/depth interaction.

  2. Self-replication of DNA rings

    Science.gov (United States)

    Kim, Junghoon; Lee, Junwye; Hamada, Shogo; Murata, Satoshi; Ha Park, Sung

    2015-06-01

    Biology provides numerous examples of self-replicating machines, but artificially engineering such complex systems remains a formidable challenge. In particular, although simple artificial self-replicating systems including wooden blocks, magnetic systems, modular robots and synthetic molecular systems have been devised, such kinematic self-replicators are rare compared with examples of theoretical cellular self-replication. One of the principal reasons for this is the amount of complexity that arises when you try to incorporate self-replication into a physical medium. In this regard, DNA is a prime candidate material for constructing self-replicating systems due to its ability to self-assemble through molecular recognition. Here, we show that DNA T-motifs, which self-assemble into ring structures, can be designed to self-replicate through toehold-mediated strand displacement reactions. The inherent design of these rings allows the population dynamics of the systems to be controlled. We also analyse the replication scheme within a universal framework of self-replication and derive a quantitative metric of the self-replicability of the rings.

  3. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    Science.gov (United States)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  4. Anisotropic etching of monocrystalline silicon under subcritical conditions

    Science.gov (United States)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  5. DNA Replication via Entanglement Swapping

    CERN Document Server

    Pusuluk, Onur

    2010-01-01

    Quantum effects are mainly used for the determination of molecular shapes in molecular biology, but quantum information theory may be a more useful tool to understand the physics of life. Molecular biology assumes that function is explained by structure, the complementary geometries of molecules and weak intermolecular hydrogen bonds. However, both this assumption and its converse are possible if organic molecules and quantum circuits/protocols are considered as hardware and software of living systems that are co-optimized during evolution. In this paper, we try to model DNA replication as a multiparticle entanglement swapping with a reliable qubit representation of nucleotides. In the model, molecular recognition of a nucleotide triggers an intrabase entanglement corresponding to a superposition state of different tautomer forms. Then, base pairing occurs by swapping intrabase entanglements with interbase entanglements.

  6. Therapeutic targeting of replicative immortality.

    Science.gov (United States)

    Yaswen, Paul; MacKenzie, Karen L; Keith, W Nicol; Hentosh, Patricia; Rodier, Francis; Zhu, Jiyue; Firestone, Gary L; Matheu, Ander; Carnero, Amancio; Bilsland, Alan; Sundin, Tabetha; Honoki, Kanya; Fujii, Hiromasa; Georgakilas, Alexandros G; Amedei, Amedeo; Amin, Amr; Helferich, Bill; Boosani, Chandra S; Guha, Gunjan; Ciriolo, Maria Rosa; Chen, Sophie; Mohammed, Sulma I; Azmi, Asfar S; Bhakta, Dipita; Halicka, Dorota; Niccolai, Elena; Aquilano, Katia; Ashraf, S Salman; Nowsheen, Somaira; Yang, Xujuan

    2015-12-01

    One of the hallmarks of malignant cell populations is the ability to undergo continuous proliferation. This property allows clonal lineages to acquire sequential aberrations that can fuel increasingly autonomous growth, invasiveness, and therapeutic resistance. Innate cellular mechanisms have evolved to regulate replicative potential as a hedge against malignant progression. When activated in the absence of normal terminal differentiation cues, these mechanisms can result in a state of persistent cytostasis. This state, termed "senescence," can be triggered by intrinsic cellular processes such as telomere dysfunction and oncogene expression, and by exogenous factors such as DNA damaging agents or oxidative environments. Despite differences in upstream signaling, senescence often involves convergent interdependent activation of tumor suppressors p53 and p16/pRB, but can be induced, albeit with reduced sensitivity, when these suppressors are compromised. Doses of conventional genotoxic drugs required to achieve cancer cell senescence are often much lower than doses required to achieve outright cell death. Additional therapies, such as those targeting cyclin dependent kinases or components of the PI3K signaling pathway, may induce senescence specifically in cancer cells by circumventing defects in tumor suppressor pathways or exploiting cancer cells' heightened requirements for telomerase. Such treatments sufficient to induce cancer cell senescence could provide increased patient survival with fewer and less severe side effects than conventional cytotoxic regimens. This positive aspect is countered by important caveats regarding senescence reversibility, genomic instability, and paracrine effects that may increase heterogeneity and adaptive resistance of surviving cancer cells. Nevertheless, agents that effectively disrupt replicative immortality will likely be valuable components of new combinatorial approaches to cancer therapy. Copyright © 2015 The Authors

  7. Weak evidence suggests higher risk for bracket bonding failure with self-etch primer compared to conventional acid etch over 12 months.

    Science.gov (United States)

    Elkhadem, Ahmed; Orabi, Noha

    2013-01-01

    Medline, Embase, Cochrane Oral Health Group's Trials Register and the Cochrane Central Register of Controlled Trials (CENTRAL). Unpublished data were sought by searching ClinicalTrials.gov, the National Research Register and Pro-Quest Dissertation Abstracts and Thesis database. There were no language restrictions. Randomised and controlled clinical trials (including split mouth) directly comparing self-etch and acid-etch primers including patients with full-arch, fixed and bonded orthodontic appliances (not banded) with follow-up periods of at least 12 months were included. Two authors abstracted data independently, with disagreements being resolved by a third. The Cochrane Risk of Bias tool was used to assess study quality. A random effects meta-analysis was undertaken. Eleven studies were included in the qualitative summary with five studies contributing to a meta-analysis. These five studies (n =3444 brackets, 1721 acid-etch, 1723 self-etch) had relatively low statistical and clinical heterogeneity. Meta-analysis demonstrated a tendency for a higher risk of failure (odds ratio 1.35; 95% CI, 0.99-1.83; P 5 0.06) with self-etch primers. The use of self-etch techniques was also associated with a small but statistically significant time saving (weighted mean difference 23.2 seconds per bracket; 95% CI, 20.7-25.8; P \\0.001). There was insufficient evidence to assess the effect of bonding modality on demineralisation rates. There is weak evidence indicating higher odds of failure with self-etch primer than acid-etch over 12 months in orthodontic patients, and there is strong evidence that a self-etch primer is likely to result in modest time savings (eight minutes for full bonding) compared with acid-etch.

  8. Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

    Directory of Open Access Journals (Sweden)

    Ludovic F. Dumee

    2014-08-01

    Full Text Available Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm as well as the sintering pressure (5–20 ton·m−2 and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested.

  9. Hybridization morphology and dentin bond stability of self-etch primers with different ethanol/water ratios.

    Science.gov (United States)

    Fontes, Silvia T; Lima, Giana S; Ogliari, Fabrício A; Piva, Evandro; Moraes, Rafael R

    2012-07-01

    This study evaluated the influence of ethanol/water ratios on the bond strength to dentin of experimental two-step, self-etch adhesive systems. Self-etch primers were prepared with constant 40 mass % of solvents. The ethanol/water ratios tested were 7:1 (P1), 3:1 (P2), and 1:1 (P3); primers with only ethanol (PE) or water (PW) as solvent were also tested. The bond strength to the dentin was investigated through a microtensile bond strength test. Resin-dentin beam-shaped specimens were obtained and tested after 24 h, 6 months, and 1 year of storage in water at 37°C. The hybridization morphology was analyzed using SEM. For bond strength at 24 h, PE = P1, P1 = P2, and P2, P3 and PW > PE. After 6 months, PE = P1 6 months = 1 year. For P2, P3 and PW, 24 h = 6 months > 1 year. For PE and P1, adhesive failures were predominant at 24 h, mixed or adhesive failures after 6 months, and premature debonding was predominant after 1 year. For P2, mixed failures were predominant at 24 h and 6 months, and premature debonding after 1 year. For P3 and PW, mixed failures were predominant at all storage periods. The SEM analysis revealed no clear differences in the hybridization patterns yielded by the water-based primers; PE showed formation of irregular resin tags.

  10. Direct fabrication of compound-eye microlens array on curved surfaces by a facile femtosecond laser enhanced wet etching process

    Science.gov (United States)

    Bian, Hao; Wei, Yang; Yang, Qing; Chen, Feng; Zhang, Fan; Du, Guangqing; Yong, Jiale; Hou, Xun

    2016-11-01

    We report a direct fabrication of an omnidirectional negative microlens array on a curved substrate by a femtosecond laser enhanced chemical etching process, which is utilized as a molding template for duplicating bioinspired compound eyes. The femtosecond laser treatment of the curved glass substrate employs a common x-y-z stage without rotating the sample surface perpendicular to the laser beam, and uniform, omnidirectional-aligned negative microlenses are generated after a hydrofluoric acid etching. Using the negative microlens array on the concave glass substrate as a molding template, we fabricate an artificial compound eye with 3000 positive microlenses of 95-μm diameter close-packed on a 5-mm polymer hemisphere. Compared to the transferring process, the negative microlenses directly fabricated on the curved mold by our method are distortion-free, and the duplicated artificial eye presents clear and uniform imaging capabilities. This work provides a facile and efficient route to the fabrication of microlenses on any curved substrates without complicated alignment and motion control processes, which has the potential for the development of new microlens-based devices and systems.

  11. Deep reactive ion etching of silicon moulds for the fabrication of diamond x-ray focusing lenses

    Science.gov (United States)

    Malik, A. M.; Fox, O. J. L.; Alianelli, L.; Korsunsky, A. M.; Stevens, R.; Loader, I. M.; Wilson, M. C.; Pape, I.; Sawhney, K. J. S.; May, P. W.

    2013-12-01

    Diamond is a highly desirable material for use in x-ray optics and instrumentation. However, due to its extreme hardness and resistance to chemical attack, diamond is difficult to form into a structure suitable for x-ray lenses. Refractive lenses are capable of delivering x-ray beams with nanoscale resolution. A moulding technique for the fabrication of diamond lenses is reported. High-quality silicon moulds were made using photolithography and deep reactive ion etching. The study of the etch process conducted to achieve silicon moulds with vertical sidewalls and minimal surface roughness is discussed. Issues experienced when attempting to deposit diamond into a high-aspect-ratio mould by chemical vapour deposition are highlighted. Two generations of lenses have been successfully fabricated using this transfer-moulding approach with significant improvement in the quality and performance of the optics observed in the second iteration. Testing of the diamond x-ray optics on the Diamond Light Source Ltd synchrotron B16 beamline has yielded a line focus of sub-micrometre width.

  12. Regulation of Unperturbed DNA Replication by Ubiquitylation

    Directory of Open Access Journals (Sweden)

    Sara Priego Moreno

    2015-06-01

    Full Text Available Posttranslational modification of proteins by means of attachment of a small globular protein ubiquitin (i.e., ubiquitylation represents one of the most abundant and versatile mechanisms of protein regulation employed by eukaryotic cells. Ubiquitylation influences almost every cellular process and its key role in coordination of the DNA damage response is well established. In this review we focus, however, on the ways ubiquitylation controls the process of unperturbed DNA replication. We summarise the accumulated knowledge showing the leading role of ubiquitin driven protein degradation in setting up conditions favourable for replication origin licensing and S-phase entry. Importantly, we also present the emerging major role of ubiquitylation in coordination of the active DNA replication process: preventing re-replication, regulating the progression of DNA replication forks, chromatin re-establishment and disassembly of the replisome at the termination of replication forks.

  13. Chromosome replication and segregation in bacteria.

    Science.gov (United States)

    Reyes-Lamothe, Rodrigo; Nicolas, Emilien; Sherratt, David J

    2012-01-01

    In dividing cells, chromosome duplication once per generation must be coordinated with faithful segregation of newly replicated chromosomes and with cell growth and division. Many of the mechanistic details of bacterial replication elongation are well established. However, an understanding of the complexities of how replication initiation is controlled and coordinated with other cellular processes is emerging only slowly. In contrast to eukaryotes, in which replication and segregation are separate in time, the segregation of most newly replicated bacterial genetic loci occurs sequentially soon after replication. We compare the strategies used by chromosomes and plasmids to ensure their accurate duplication and segregation and discuss how these processes are coordinated spatially and temporally with growth and cell division. We also describe what is known about the three conserved families of ATP-binding proteins that contribute to chromosome segregation and discuss their inter-relationships in a range of disparate bacteria.

  14. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  15. Development and characterization of advanced electron beam resists

    Science.gov (United States)

    Agrawal, Ankur

    Over the past twenty years, the amount of research and development work for electron beam resists has seriously lagged that performed for optical resists. This has been due mainly to the relatively low volume use of electron beam lithography for production purposes. However, as electron beam lithography is now becoming the primary solution for achieving future critical dimension requirements in mask making and appears to be a promising NGL technology, interest in electron beam resist development has increased in recent years. The primary issue in electron beam resist design centers around finding a single resist system that combines the required sensitivity and etch resistance that is needed to enable high volume production. In this work, the primary goal was to explore the development of a novel two-component non-chemically amplified electron beam resist material for high keV (>10 keV) patterning for mask-making with: (1) high contrast, (2) high sensitivity, (3) high resolution, and, (4) high etch resistance. Poly (2-methyl-1-pentene co 2-ethoxyethyl-methallyl ether sulfone) was used as a polymeric e-beam sensitive material conjunction with a series of commercial novolac resins to formulate electron beam resists. These two-component resists have been termed sulfone-novolac system (SNS) resists. The approach used in this project is to develop a suite of experimental tools and simulation models that can be used to aid in the rational design, formulation, and characterization of new electron beam resists. The main tasks that have been addressed are: (1) development of the electron beam resist characterization tool set, (2) understanding the fundamental material behavior of a non-chemically amplified polysulfone-novolac (SNS) e-beam resist for next generation mask making, (3) lithographic process development and optimization for the SNS resists, (4) evaluation of the lithographic performance of the SNS resists using the optimized processing conditions, and (5) develop

  16. Semiconservative replication in the quasispecies model

    Science.gov (United States)

    Tannenbaum, Emmanuel; Deeds, Eric J.; Shakhnovich, Eugene I.

    2004-06-01

    This paper extends Eigen’s quasispecies equations to account for the semiconservative nature of DNA replication. We solve the equations in the limit of infinite sequence length for the simplest case of a static, sharply peaked fitness landscape. We show that the error catastrophe occurs when μ , the product of sequence length and per base pair mismatch probability, exceeds 2 ln [2/ ( 1+1/k ) ] , where k>1 is the first-order growth rate constant of the viable “master” sequence (with all other sequences having a first-order growth rate constant of 1 ). This is in contrast to the result of ln k for conservative replication. In particular, as k→∞ , the error catastrophe is never reached for conservative replication, while for semiconservative replication the critical μ approaches 2 ln 2 . Semiconservative replication is therefore considerably less robust than conservative replication to the effect of replication errors. We also show that the mean equilibrium fitness of a semiconservatively replicating system is given by k ( 2 e-μ/2 -1 ) below the error catastrophe, in contrast to the standard result of k e-μ for conservative replication (derived by Kimura and Maruyama in 1966). From this result it is readily shown that semiconservative replication is necessary to account for the observation that, at sufficiently high mutagen concentrations, faster replicating cells will die more quickly than more slowly replicating cells. Thus, in contrast to Eigen’s original model, the semiconservative quasispecies equations are able to provide a mathematical basis for explaining the efficacy of mutagens as chemotherapeutic agents.

  17. Regulation of chromosomal replication in Caulobacter crescentus.

    Science.gov (United States)

    Collier, Justine

    2012-03-01

    The alpha-proteobacterium Caulobacter crescentus is characterized by its asymmetric cell division, which gives rise to a replicating stalked cell and a non-replicating swarmer cell. Thus, the initiation of chromosomal replication is tightly regulated, temporally and spatially, to ensure that it is coordinated with cell differentiation and cell cycle progression. Waves of DnaA and CtrA activities control when and where the initiation of DNA replication will take place in C. crescentus cells. The conserved DnaA protein initiates chromosomal replication by directly binding to sites within the chromosomal origin (Cori), ensuring that DNA replication starts once and only once per cell cycle. The CtrA response regulator represses the initiation of DNA replication in swarmer cells and in the swarmer compartment of pre-divisional cells, probably by competing with DnaA for binding to Cori. CtrA and DnaA are controlled by multiple redundant regulatory pathways that include DNA methylation-dependent transcriptional regulation, temporally regulated proteolysis and the targeting of regulators to specific locations within the cell. Besides being critical regulators of chromosomal replication, CtrA and DnaA are also master transcriptional regulators that control the expression of many genes, thus connecting DNA replication with other events of the C. crescentus cell cycle. Copyright © 2012 Elsevier Inc. All rights reserved.

  18. Comparison of three replication strategies in complex multicellular organisms: Asexual replication, sexual replication with identical gametes, and sexual replication with distinct sperm and egg gametes

    Science.gov (United States)

    Tannenbaum, Emmanuel

    2008-01-01

    This paper studies the mutation-selection balance in three simplified replication models. The first model considers a population of organisms replicating via the production of asexual spores. The second model considers a sexually replicating population that produces identical gametes. The third model considers a sexually replicating population that produces distinct sperm and egg gametes. All models assume diploid organisms whose genomes consist of two chromosomes, each of which is taken to be functional if equal to some master sequence, and defective otherwise. In the asexual population, the asexual diploid spores develop directly into adult organisms. In the sexual populations, the haploid gametes enter a haploid pool, where they may fuse with other haploids. The resulting immature diploid organisms then proceed to develop into mature organisms. Based on an analysis of all three models, we find that, as organism size increases, a sexually replicating population can only outcompete an asexually replicating population if the adult organisms produce distinct sperm and egg gametes. A sexual replication strategy that is based on the production of large numbers of sperm cells to fertilize a small number of eggs is found to be necessary in order to maintain a sufficiently low cost for sex for the strategy to be selected for over a purely asexual strategy. We discuss the usefulness of this model in understanding the evolution and maintenance of sexual replication as the preferred replication strategy in complex, multicellular organisms.

  19. Evaluation of microshear bond strength and nanoleakage of etch-and-rinse and self-etch adhesives to dentin pretreated with silver diamine fluoride/potassium iodide: An in vitro study.

    Science.gov (United States)

    Selvaraj, Karthik; Sampath, Vidhya; Sujatha, V; Mahalaxmi, S

    2016-01-01

    The aim of this in vitro study was to comparatively evaluate the microshear bond strength (MSBS) of etch-and-rinse and self-etch (ER and SE) bonding systems to dentin pretreated with silver diamine fluoride/potassium iodide (SDF/KI) and nanoleakage at the resin-dentin interface using transmission electron microscope (TEM). Seventy-two dentin slabs of 3 mm thickness were prepared from extracted human permanent third molars and divided into four groups (n = 18) based on the dentin surface treatment as follows: (1) ER adhesive bonding without dentin pretreatment; (2) SDF/KI pretreatment of dentin followed by ER adhesive bonding; (3) SE adhesive bonding without dentin pretreatment; and (4) SDF/KI pretreatment of dentin followed by SE adhesive bonding. Resin composite was built on the dentin slabs to a height of 4 mm incrementally, and dentin-composite beams of approximately 1 mm 2 cross-sectional area were prepared. The beams were subjected to MSBS analysis, and the fractured surface was observed under scanning electron microscope to determine the mode of failure. The resin-dentin interface was examined under TEM for evaluation of nanoleakage. One-way ANOVA followed by Tukey's post hoc multiple comparison tests. Pretreatment of dentin with SDF/KI increased the MSBS of ER and SE adhesives, though not statistically significant, except between Groups 2 and 3. In all the groups, the predominant mode of failure was adhesive followed by cohesive in resin, mixed and cohesive in dentin. TEM examination of resin-dentin interface showed that pretreatment with 38% SDF/KI reduced nanoleakage regardless of the type of bonding system used. Pretreatment of dentin with SDF/KI minimized nanoleakage at the resin-dentin interface without adversely affecting the bond strength of resin composite to dentin.

  20. A new method of dry cleaning after plasma etching of MRAM materials

    Science.gov (United States)

    Kubo, Takuya; Kang, Song-Yun; Tokyo Electron Ltd. Team

    2015-09-01

    This paper describes a new method for dry cleaning after etching of MRAM materials. Problems such as repeatability or particle generation after etching of MRAM materials are due to the non-volatile nature of etch products. A new etch concept for MRAM is to etch each material such as carbon, metal, or silicon compounds step by step. There are 4 steps in this cleaning: 1) carbon removal by N2/H2, 2) metal removal by Ar, 3) silicon removal by CF4/O2, 4) carbon, oxygen, and fluorine removal by N2/H2. Etch repeatability and particle level reduction have been demonstrated to result from this cleaning method. Akasaka Biz Tower, 5-3-1 Akasaka Minato-ku, Tokyo 107-6325, Japan.