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Sample records for beam deposited mgf

  1. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  2. Lifetime obtained by ion beam assisted deposition

    International Nuclear Information System (INIS)

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H2O and O2. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances

  3. Dual ion beam assisted deposition of biaxially textured template layers

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  4. Focused electron beam induced deposition: A perspective

    Directory of Open Access Journals (Sweden)

    Michael Huth

    2012-08-01

    Full Text Available Background: Focused electron beam induced deposition (FEBID is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is now particularly attractive for several areas in both, basic and applied research. The present topical review addresses selected examples that highlight this development in the areas of charge-transport regimes in nanogranular metals close to an insulator-to-metal transition, the use of these materials for strain- and magnetic-field sensing, and the prospect of extending FEBID to multicomponent systems, such as binary alloys and intermetallic compounds with cooperative ground states.Results: After a brief introduction to the technique, recent work concerning FEBID of Pt–Si alloys and (hard-magnetic Co–Pt intermetallic compounds on the nanometer scale is reviewed. The growth process in the presence of two precursors, whose flux is independently controlled, is analyzed within a continuum model of FEBID that employs rate equations. Predictions are made for the tunability of the composition of the Co–Pt system by simply changing the dwell time of the electron beam during the writing process. The charge-transport regimes of nanogranular metals are reviewed next with a focus on recent theoretical advancements in the field. As a case study the transport properties of Pt–C nanogranular FEBID structures are discussed. It is shown that by means of a post-growth electron-irradiation treatment the electronic intergrain-coupling strength can be continuously tuned over a wide range. This provides unique access to the transport properties of this material close to the insulator-to-metal transition. In the last part of the review, recent developments in mechanical

  5. Preparation and properties of MgF2 anti-reflective thin film by sol-gel process

    International Nuclear Information System (INIS)

    MgF2 anti-reflective thin films were successfully prepared in methanol media via sol-gel process using magnesium acetate and hydrofluoric acid as reactants. The influence of processing temperature on MgF2 sols was investigated. As-synthesized MgF2 sol was used to deposit AR films on quartz substrate, which could be applied for 355 nm UV laser. The results showed that MgF2 thin films had low refractive index, small surface roughness and good anti-reflective property in the UV region and high la- ser-induced damage threshold (LIDT) at 355 nm (6 ns pulses). The refractive index at 355 nm wavelength of film decreased with the increase of processing temperature. The transmittance and LIDT of quartz substrate with double-side MgF2 films both reached the maximum value, that is, 99.4% for transmittance and 10.85 J·cm-2 (6 ns pulses) for LIDT when the processing temperature was 120 degree C. (authors)

  6. NbN superconducting nanowire single-photon detector fabricated on MgF2 substrate

    Science.gov (United States)

    Wu, J. J.; You, L. X.; Zhang, L.; Zhang, W. J.; Li, H.; Liu, X. Y.; Zhou, H.; Wang, Z.; Xie, X. M.; Xu, Y. X.; Fang, W.; Tong, L. M.

    2016-06-01

    The performance of superconducting nanowire single-photon detectors (SNSPDs) relies on substrate materials. Magnesium fluoride (MgF2) exhibits outstanding optical properties, such as large optical transmission range and low refractive index (n = 1.38), making it an attractive substrate. We present the fabrication and the performance of SNSPDs made of a 4.5 nm thick NbN thin film deposited on MgF2 substrate for the wavelength of 1550 nm. The front-side illuminated SNSPDs without an optical cavity showed a maximal detection efficiency of 12.8% at a system dark count rate (DCR) of 100 Hz, while the backside illuminated SNSPDs with a SiO2/Au optical cavity atop displayed a maximal detection efficiency of 33% at a DCR of 100 Hz.

  7. Patterned electrochemical deposition of copper using an electron beam

    OpenAIRE

    Mark den Heijer; Ingrid Shao; Alex Radisic; Reuter, Mark C.; Ross, Frances M.

    2014-01-01

    We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we contro...

  8. Calculation of neutral beam deposition accounting for excited states

    Energy Technology Data Exchange (ETDEWEB)

    Gianakon, T.A.

    1992-09-01

    Large-scale neutral-beam auxillary heating of plasmas has led to new plasma operational regimes which are often dominated by fast ions injected via the absorption of an energetic beam of hydrogen neutrals. An accurate simulation of the slowing down and transport of these fast ions requires an intimate knowledge of the hydrogenic neutral deposition on each flux surface of the plasma. As a refinement to the present generation of transport codes, which base their beam deposition on ground-state reaction rates, a new set of routines, based on the excited states of hydrogen, is presented as mechanism for computing the attenuation and deposition of a beam of energetic neutrals. Additionally, the numerical formulations for the underlying atomic physics for hydrogen impacting on the constiuent plasma species is developed and compiled as a numerical database. Sample results based on this excited state model are compared with the ground-state model for simple plasma configurations.

  9. Properties of e-beam deposited Pt nano-interconnects

    Science.gov (United States)

    Rotkina, Lolita

    2003-03-01

    Connecting nano-objects to macroscopic leads is a tough technical problem of nanotechnology. In this work direct electron beam induced deposition of Pt from metal-organic precursor has been used to form nano-interconnects. For example, nanotubes and nanowires, silicide needle-like islands, all-oxide semiconducting nanocrystals and other nanostructures have been wired to metal leads to perform transport measurements. Material properties of deposited nano-interconnects are in focus of this study. Chemical composition of deposit has been studied by Auger spectroscopy and Transmission Electron Microscopy. Content of the deposited material was shown to be independent on the beam current. The content was contingent on the rate of pumping-out of decomposed precursor residue. Conductivity of the nano-interconnects have been improved dramatically by annealing in low-pressure neutral atmosphere. Structural and material properties of deposit, annealed in the temperature range 100 to 400 C, were studied.

  10. Use of beam deflection to control an electron beam wire deposition process

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

  11. Mo SILICIDE SYNTHISIS BY DUAL ION BEAM DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    T.H. Zhang; Z.Z. Yi; X.Y. Wu; S.J. Zhang; Y.G. Wu; X. Zhang; H.X. Zhang; A.D. Liu; X.J. Zhang

    2002-01-01

    Mo silicides MosSi3 with high quality were prepared using ion beam deposition equip-ment with two Filter Metal Vacuum Arc Deposition (FMEVAD). When the numberof alternant deposition times was 198, total thickness of the coating is 40nm. Thecoatings with droplet free can be readily obtained, so the surface is smooth. TEMobservation shows that Mo and Si alternant deposition coating is conpact structure.The fine Mo silicide grains densely distributed in the coating. The coating adherenceon silicon is excellent.

  12. Solid gold nanostructures fabricated by electron beam deposition

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Madsen, Dorte Nørgaard; Rasmussen, A.M.;

    2003-01-01

    by a certain range of gold/carbon ratios. Above a certain threshold of ESEM chamber water vapor pressure and a certain threshold of electron beam current, the deposited tips contained a solid polycrystalline gold core. The deposition technique was used to fabricate free-standing nanowires and to solder free...... and bridges. Transmission electron microscopy was used to study how the composition of these structures was affected when the background gas in the ESEM chamber and the electron beam parameters were varied. The nanostructures were layered composites of up to three different materials each characterized...

  13. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    Science.gov (United States)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  14. Multi-electron beam system for high resolution electron beam induced deposition

    NARCIS (Netherlands)

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm structure

  15. Nanopillar growth by focused helium ion-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen Ping; Salemink, Huub W M; Alkemade, Paul F A [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands); Veldhoven, Emile van; Maas, Diederik J [TNO Science and Industry, Stieltjesweg 1, 2628 CK Delft (Netherlands); Sanford, Colin A [Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960 (United States); Smith, Daryl A; Rack, Philip D, E-mail: p.f.a.alkemade@tudelft.nl [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996-2200 (United States)

    2010-11-12

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH{sub 3}){sub 3}Pt(C{sub P}CH{sub 3}) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current. Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

  16. Nanopillar growth by focused helium ion-beam-induced deposition

    International Nuclear Information System (INIS)

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH3)3Pt(CPCH3) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current. Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

  17. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  18. Optical Properties of MgF2 / MgF2 / Glass and MgF2 / TiO2 / Glass

    Directory of Open Access Journals (Sweden)

    S. Ghahramani

    2014-01-01

    Full Text Available MgF2 thin films by thickness of 93 nm were deposited on MgF2 / glass and TiO2 / glass thin layers by resistance evaporation method under ultra-high vacuum (UHV conditions, rotating pre layer for sample one and normal deposition for second one. Optical properties were measured via spectrophotometer in spectral range of 300-1100 nm wave length. The optical constants such as, real part of refractive index (n, imaginary part of refractive index (k, real and imaginary parts of dielectric function ε1, ε2 respectively and absorption coefficient (, were obtained from Kramers-Kronig analysis of reflectivity curves. Band-gap energy was also estimated for these films.

  19. Fabrication of plasmonic nanostructures with electron beam induced deposition

    NARCIS (Netherlands)

    Acar, H.

    2013-01-01

    The work described in this thesis was shaped by the goal---coming up new approaches to fabricate plasmonic materials with electron beam induced deposition (EBID). One-step, bottom-up and direct-write are typical adjectives that are used to indicate the advantageous properties of this technique. Thes

  20. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, M., E-mail: mnistor@infim.ro [National Institute for Lasers, Plasma and Radiation Physics, L22, P.O. Box MG-36, 77125 Bucharest-Magurele (Romania); Petitmangin, A.; Hebert, C. [INSP, Universite Pierre et Marie Curie - Paris 6, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris (France); Seiler, W. [LIM, ENSAM, 151 boulevard de l' Hopital, 75013 Paris (France)

    2011-04-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  1. Kinetics of ion beam deposition of carbon at room temperature

    International Nuclear Information System (INIS)

    Growth rates of carbon films grown by ion beam deposition using methane gas were measured in situ as a function of deposition conditions. The methane pressure dependence of the growth rate was used to measure the cross-section for charge exchange. Variations in deposition rate per incident energetic particle found for each ion energy were related to ion current density. It was found that rates of growth per incident energetic specie were (i) largest for the smallest current densities, (ii) decreased monotonically with increasing current density, and (iii) were consistently larger than can be explained by deposition directly from the energetic flux alone. These observations were interpreted in terms of irradiation-induced surface interactions which promote chemisorption of methane physisorbed from the ambient atmosphere. (orig.)

  2. Multi-electron beam system for high resolution electron beam induced deposition

    OpenAIRE

    Van Bruggen, M.J.

    2008-01-01

    The development of a multi-electron beam system is described which is dedicated for electron beam induced deposition (EBID) with sub-10 nm resolution. EBID is a promising mask-less nanolithography technique which has the potential to become a viable technique for the fabrication of 20-2 nm structures after 2013, as described by the International Technology Roadmap for Semiconductors (ITRS), or can be used for rapid prototyping in research applications. The key point is to combine the throughp...

  3. Hardness and stress of amorphous carbon film deposited by glow discharge and ion beam assisting deposition

    CERN Document Server

    Marques, F C

    2000-01-01

    The hardness and stress of amorphous carbon films prepared by glow discharge and by ion beam assisting deposition are investigated. Relatively hard and almost stress free amorphous carbon films were deposited by the glow discharge technique. On the other hand, by using the ion beam assisting deposition, hard films were also obtained with a stress of the same order of those found in tetrahedral amorphous carbon films. A structural analysis indicates that all films are composed of a sp sup 2 -rich network. These results contradict the currently accepted concept that both stress and hardness are only related to the concentration of sp sup 3 sites. Furthermore, the same results also indicate that the sp sup 2 sites may also contribute to the hardness of the films.

  4. Magnetron deposition of TCO films using ion beam

    Science.gov (United States)

    Asainov, O.; Umnov, S.; Chinin, A.

    2015-11-01

    Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the films were irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.

  5. A critical literature review of focused electron beam induced deposition

    Science.gov (United States)

    van Dorp, W. F.; Hagen, C. W.

    2008-10-01

    An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied (current density, acceleration voltage, scan patterns, etc.). Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and (as far as possible) interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters (such as the local precursor pressure) are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally

  6. Substrate heating measurements in pulsed ion beam film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J. [Los Alamos National Lab., NM (United States); Tallant, D.R. [Cornell Univ., Ithaca, NY (United States). Materials Science and Engineering Dept.; Thompson, M.O. [Sandia National Labs., Albuquerque, NM (United States)

    1995-05-01

    Diamond-like Carbon (DLC) films have been deposited at Los Alamos National Laboratory by pulsed ion beam ablation of graphite targets. The targets were illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm{sup 2}. Ion energies were on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse. Raman spectra of the deposited films indicate an increasing ratio of sp{sup 3} to sp{sup 2} bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at varying positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal. Latest data and analysis will be presented.

  7. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Ion beam-assisted diamond-like carbon (DLC) coatings have beenused for growing the human platelet, fibrinogen, and albumin in the control environment in order to assess their hemocompatibility. The hard carbon films were prepared on polymethylmethacrylate (PMMA) at room temperature using ion beam assisted deposition (IBAD). Raman spectroscopic analysis proved that the carbon films on PMMA are diamond-like with a higher fraction of sp\\+3 bonds in the structure of mixed sp\\+2+sp\\+3 bonding. The blood protein adsorption tests showed that DLC coatings can adsorb more albumin and are slightly more fibrinogen than the PMMA chosen as a control sample. The platelets adhered on DLC coatings were reduced significantly in number. These results indicate good hemocompatibility of DLC coatings.

  8. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    International Nuclear Information System (INIS)

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used

  9. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  10. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  11. Nanostructured component fabrication by electron beam-physical vapor deposition

    Science.gov (United States)

    Singh, Jogender; Wolfe, Douglas E.

    2005-08-01

    Fabrication of cost-effective, nano-grained net-shaped components has brought considerable interest to Department of Defense, National Aeronautics and Space Administration, and Department of Energy. The objective of this paper is to demonstrate the versatility of electron beam-physical vapor deposition (EB-PVD) technology in engineering new nanostructured materials with controlled microstructure and microchemistry in the form of coatings and net-shaped components for many applications including the space, turbine, optical, biomedical, and auto industries. Coatings are often applied on components to extent their performance and life under severe environmental conditions including thermal, corrosion, wear, and oxidation. Performance and properties of the coatings depend upon their composition, microstructure, and deposition condition. Simultaneous co-evaporation of multiple ingots of different compositions in the high energy EB-PVD chamber has brought considerable interest in the architecture of functional graded coatings, nano-laminated coatings, and design of new structural materials that could not be produced economically by conventional methods. In addition, high evaporation and condensate rates allowed fabricating precision net-shaped components with nanograined microstructure for various applications. Using EB-PVD, nano-grained rhenium (Re) coatings and net-shaped components with tailored microstructure and properties were fabricated in the form of tubes, plates, and Re-coated spherical graphite cores. This paper will also present the results of various metallic and ceramic coatings including chromium, titanium carbide (TiC), titanium diboride (TiB2), hafnium nitride (HfN), titanium-boron-carbonitride (TiBCN), and partially yttria stabilized zirconia (YSZ) TBC coatings deposited by EB-PVD for various applications.

  12. Cobalt cluster-assembled thin films deposited by low energy cluster beam deposition: Structural and magnetic investigations of deposited layers

    International Nuclear Information System (INIS)

    Cobalt cluster-assembled thin films were deposited on amorphous-carbon-coated copper grids and on silicon substrates at room temperature by low energy cluster beam deposition. Characterizations using high-resolution transmission electronic microscopy and atomic force microscopy reveal randomly stacked agglomerates of 9-11 nm diameter, which are themselves composed of small 3.6 nm diameter fcc cobalt clusters. The films are ferromagnetic up to room temperature and above, which implies that the clusters are exchange coupled. The approach to saturation is analyzed within the random anisotropy model. The values of the exchange coefficient A and the anisotropy constant K then derived are discussed. The temperature dependence of the coercivity below 100 K is discussed in terms of thermal activation effects. All results indicate that the fundamental entity governing the magnetic behaviors is constituted by the 9-11 nm diameter agglomerates rather than by the clusters themselves

  13. Ion-beam-deposited boron carbide coatings for the extreme ultraviolet.

    Science.gov (United States)

    Blumenstock, G M; Keski-Kuha, R A

    1994-09-01

    The normal-incidence reflectance of ion-beam-deposited boron carbide thin films has been evaluated in the extreme ultraviolet (EUV) spectral region. High-reflectance coatings have been produced with reflectances greater than 30% between 67 and 121.6 nm. This high reflectance makes ion-beam-deposited boron carbide an attractive coating for EUV applications.

  14. Focused electron beam induced deposition of magnetic nanostructures

    Science.gov (United States)

    de Teresa, Jose M.

    2011-03-01

    Nanopatterning strategies of magnetic materials normally rely on standard techniques such as electron-beam lithography using electron-sensitive resists. Focused electron beam induced deposition (FEBID) is currently being investigated as an alternative single-step route to produce functional magnetic nanostructures. Thus, Co-based and Fe-based precursors have been recently investigated for the growth of magnetic nanostructures by FEBID. In the present contribution, I will give an overview of the existing literature on magnetic nanostructures by FEBID and I will focus on the growth of Co nanostructures by FEBID using Co 2 (CO)8 as precursor gas. The Co content in the nanostructures can reach 95%. Magnetotransport experiments indicate that full metallic behaviour is displayed with relatively low residual resistivity and standard anisotropic magnetoresistance (0.8%). The coercive field of nanowires with changing aspect ratio has been determined in nanowires with width down to 150 nm by means of Magneto-optical Kerr Effect and the magnetization reversal has been imaged by means of Magnetic Force Microscopy, Scanning Transmission X-ray Microscopy as well as Lorentz Microscopy experiments. Nano-Hall probes have been grown with remarkable minimum detectable magnetic flux. Noticeably, it has been found that the domain-wall propagation field is lower than the domain-wall nucleation field in L-shaped nanowires, with potential applications in magnetic logic, sensing and storage. The spin polarization of these Co nanodeposits has been determined through Andreev-Reflection experiments in ferromagnetic-superconducting nanocontacts and amounts to 35%. Recent results obtained in Fe-based nanostructures by FEBID using Fe 2 (CO)9 precursor will be also presented. I acknowledge the collaboration in this field with A. Fernandez-Pacheco, R. Cordoba, L. Serrano, S. Sangiao, L.A. Rodriguez, C. Magen, E. Snoeck, L. Morellon, M.R. Ibarra.

  15. Texture development of CeO2 thin films deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    CeO2 thin films were prepared on amorphous quartz glass substrates by the ion beam assisted deposition (IBAD) technique at room temperature. In order to control both the in-plane and out-of-plane texture of the films, a special geometrical arrangement of the ion sources, the target, and the substrate was used. A new concept, considering the role of reflected particles from the target, which we call self-IBAD, was introduced. The structural properties of the CeO2 films were investigated by x-ray diffraction. Good biaxially textured films were obtained with out-of-plane mosaic spreads of 3.0 deg. and in-plane alignment of 10.8 deg. C

  16. Effects of oxygen pressure in reactive ion beam sputter deposition of zirconium oxides

    International Nuclear Information System (INIS)

    The mechanism of reactive ion beam sputtering is investigated. The experimental results indicate that the pressure decrease during sputtering, the properties of Zr--O films, and the deposition rate are all strongly influenced by oxygen partial pressure. A new model which takes into account the gettering action of the deposition material and deals with the number of sputtered and gaseous particles is presented for reactive ion beam sputtering of metal. The theoretical values are compared with experimental results of the reactive ion beam sputtering. It is found that the calculated values agree extremely well with the oxygen partial pressure decrease and the deposition rate measured experimentally

  17. Beam-Induced Deposition of Thin Metallic Films.

    Science.gov (United States)

    Funsten, Herbert Oliver, III

    1990-01-01

    Ion and electron beam induced deposition (BID) of thin (1 μm), conductive films is accomplished by dissociating and removing the nonmetallic components of an adsorbed, metal-based, molecular gas. Current research has focused primarily on room temperature (monolayer adsorption) BID using electrons and slow, heavy ions. This study investigates low temperature (50 to 200 K) BID in which the condensation of the precursor gases (SnCl _4 and (CH_3) _4Sn) maximizes the efficiency of the incident radiation which can create and remove nonmetallic fragments located several monolayers below the film surface. The desired properties of the residual metallic films are produced by using as incident radiation either nuclear (35 keV Ar ^+) or electronic (2 keV electrons, 25 keV H^+, or 50 keV H ^+) energy loss mechanisms. Residual films are analyzed ex situ by Scanning Electron Microscopy (SEM), thickness measurements, resistivity measurements, Rutherford Backscattering Spectroscopy (RBS), and infrared spectroscopy. Low temperature BID film growth models, which are derived from both a computer simulation and a mathematical analysis, closely agree. Both the fragmentation and sputtering cross sections for a particular ion and energy are derived for films created from (CH_3) _4Sn. The fragmentation cross section, which corresponds to film growth, is roughly related to the electronic stopping power by the 1.9 power. The loss of carbon in films which were created from (CH_3) _4Sn is strongly dependent on the nuclear stopping power. Film growth rates for low temperature BID have been found to be 10 times those of room temperature BID.

  18. Diffusion and Interface Reaction of Cu/Si(100) Films Prepared by Cluster Beam Deposition

    Institute of Scientific and Technical Information of China (English)

    GAO Xing-Xin; JIA Yan-Hui; LI Gong-Ping; CHO Seong-Jin; KIM Hee

    2011-01-01

    Cu thin films are deposited on Si(100) substrates by neutral cluster beams and ionized cluster beams. The atomic diffusion and interface reaction between the Cu films and the Si substrates of as-deposited and annealed at different temperatures(230℃, 450℃, 500℃and 600℃) are investigated by Rutherford backscatteringspectrometry(RBS)and x-ray diffraction(XRD). Some significant results are obtained on the following aspects:(1) For the Cu/Si(100)samples prepared by neutral cluster beams and ionized cluster beams at Va=0 kV, atomic diffusion phenomena are observed clearly in the as-deposited samples. With the increase of annealing temperature, the interdiffusion becomes more apparent. However, the diffusion intensities of the RBS spectra of the Cu/Si(100) films using neutral cluster beams are always higher than that of the Cu/Si(100) films using ionized cluster beams at Va=OkV in the as-deposited and samples annealed at the same temperature. The compound of Cu3Si is observed in the as-deposited samples.(2) For the Cu/Si(100) samples prepared by ionized cluster beams at Va=1, 3, 5 kV,atomic diffusion phenomena are observed in the as-deposited samples at Va=1, 5 kV. For the samples prepared at Va=3 kV, the interdiffusion phenomenon is observed until 500℃ annealing temperature. The reason for the difference is discussed.

  19. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  20. Physico-chemical study of the focused electron beam induced deposition process

    OpenAIRE

    Bret, Tristan; Hoffmann, Patrik

    2007-01-01

    The focused electron beam induced deposition process is a promising technique for nano and micro patterning. Electrons can be focused in sub-angström dimensions, which allows atomic-scale resolution imaging, analysis, and processing techniques. Before the process can be used in controlled applications, the precise nature of the deposition mechanism must be described and modelled. The aim of this research work is to present a physical and chemical description of the focused electron beam induc...

  1. Laser controlled deposition of metal microstructures via nondiffracting Bessel beam illumination

    Science.gov (United States)

    Drampyan, Rafael; Leonov, Nikita; Vartanyan, Tigran

    2016-04-01

    The technique of the laser controlled deposition of sodium and rubidium deposits on the sapphire substrate is presented. The metals were deposited on the clean sapphire substrate from the vapor phase contained in the evacuated and sealed cell. We use an axicon to produce a non-diffracting Bessel beam out of the beam got from the cw diode laser with 200 mW power at the wavelength of 532 nm. After 30 minutes of the laser-controlled deposition the substrates were examined in the optical microscope. The obtained metal deposits form the sharp-cut circles with the pitch of 10 μm, coincident with the tens of dark rings of the Bessel beam. Reduction of the laser power leads to the build up of the continuous metal film over the whole substrate.

  2. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    Science.gov (United States)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  3. Enhancement of neutral beam deposition in hydrogen discharge using carbon pellet injection in LHD

    International Nuclear Information System (INIS)

    The central ion temperature in the large helical device (LHD), as measured by charge-exchange recombination spectroscopy, has been improved to a record 5.6 keV by combining 21 MW of neutral beam heating with the injection of a carbon pellet. The intensity of the neutral beam emission of the hydrogen Balmer line (Hα: n=3 → 2) was observed to weaken along the beam injection axis following the carbon pellet injection due to the increased beam attenuation. The beam-emission intensity was reconstructed by calculating the density distribution, and the beam-stopping coefficients, along a beam injection axis and was found to fit well to the measured beam-emission for a mixed hydrogen and carbon target plasma. The dynamics of the neutral beam deposition power and the carbon fraction were estimated from the beam-emission measurements using data from ADAS. We conclude that the beam deposition power in a carbon pellet discharge is enhanced over that of a pure hydrogen discharge. (author)

  4. Lateral resolution in focused electron beam-induced deposition: scaling laws for pulsed and static exposure

    Energy Technology Data Exchange (ETDEWEB)

    Szkudlarek, Aleksandra [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland); AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Szmyt, Wojciech; Kapusta, Czeslaw [AGH University of Science and Technology, Department of Solid State Physics, Faculty of Physics and Applied Computer Science, Krakow (Poland); Utke, Ivo [Empa, Laboratory for Mechanics of Materials and Nanostructures, Thun (Switzerland)

    2014-12-15

    In this work, we review the single-adsorbate time-dependent continuum model for focused electron beam-induced deposition (FEBID). The differential equation for the adsorption rate will be expressed by dimensionless parameters describing the contributions of adsorption, desorption, dissociation, and the surface diffusion of the precursor adsorbates. The contributions are individually presented in order to elucidate their influence during variations in the electron beam exposure time. The findings are condensed into three new scaling laws for pulsed exposure FEBID (or FEB-induced etching) relating the lateral resolution of deposits or etch pits to surface diffusion and electron beam exposure dwell time for a given adsorbate depletion state. (orig.)

  5. Characteristics of deposition process of thin films by ion-beam evaporation

    International Nuclear Information System (INIS)

    Intense pulsed ion-beam evaporation (IBE) has been proposed as one of the new techniques for the preparation of thin films. To understand the basic process of thin film deposition, the energy deposition on the substrate surface by ablation plasma was measured by using calorimetric technique. The characteristics of prepared thin films were studied with deposition energy. In addition, the substrate temperature was calculated, based on the experimental results, by using one-dimensional simulations only considering heat conduction. (author)

  6. Optimization of a plasma focus device as an electron beam source for thin film deposition

    Science.gov (United States)

    Zhang, T.; Lin, J.; Patran, A.; Wong, D.; Hassan, S. M.; Mahmood, S.; White, T.; Tan, T. L.; Springham, S. V.; Lee, S.; Lee, P.; Rawat, R. S.

    2007-05-01

    Electron beam emission characteristics from neon, argon, hydrogen and helium in an NX2 dense plasma focus (DPF) device were investigated in order to optimize the plasma focus device for deposition of thin films using energetic electron beams. A Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal characteristics, total electron charge and energy distributions of electron emission from the NX2 DPF device. It is found that hydrogen should be the first choice for thin film deposition as it produces the highest electron beam charge and higher energy (from 50 to 200 keV) electrons. Neon is the next best choice as it gives the next highest electron beam charge with mid-energy (from 30 to 70 keV) electrons. The operation of NX2 with helium at voltages above 12 kV produces a mid-energy (from 30 to 70 keV) electron beam with low-electron beam charge, however, argon is not a good electron beam source for our NX2 DPF device. Preliminary results of the first ever thin film deposition using plasma focus assisted pulsed electron deposition using a hydrogen operated NX2 plasma focus device are presented.

  7. MgF2/Se薄膜封装层对OLED性能及寿命的影响%Influence of MgF2/Se film encapsulation layer on performance and lifetime of OLED

    Institute of Scientific and Technical Information of China (English)

    高淑雅; 吕磊; 孔祥朝; 陈维铅; 张方辉

    2013-01-01

    有机电致发光器件(OLEDs)在使用过程中,易受到空气中水汽、氧气及其它污染物的影响从而导致其工作寿命降低.本文将具有良好光透过率和热稳定性的MgF2薄膜与在水汽和氧气中具有良好稳定性的Se薄膜通过真空蒸镀制成复合薄膜作为OLEDs的封装层,以达到提高器件使用寿命的目的.器件各功能层蒸镀完成后,保持真空度(3×10-4 Pa)不变,在阴极表面蒸镀MgF2/Se薄膜封装层.比较了绿光OLED器件(器件结构为ITO/CuPc/NPB/Alq3:C-545T/Alq3/LiF/A1)封装前后的亮度-电压-电流密度特性、电致发光光谱及寿命.研究发现,经过MgF2/Se封装后,器件的电流密度-电压特性、亮度和发光光谱几乎没有受到影响,二者的光谱峰都在528 nm处,色坐标(CIE)分别为(0.355 5,0.6131)和(0.3560,0.6104),只是起亮电压由3V变为4 V;器件的寿命由原来的175 h变为300 h,提高了1.7倍.因此,MgF2/Se薄膜是一种有效的OLEDs无机薄膜封装层.%Organic light emitting devices (OLEDs) are easy to be influenced by water vapor,oxygen of air and other pollutants,which leads to the reducing of their working life. In the paper,the MgF2 thin film with a good optical transmission and thermal stability and the Se thin film with a good stability in water vapor and oxygen were made in to composite thin film by vacuum evaporation as OLED encapsulation layer,and the lifetime of the device would be improved in expectation. The MgF2/Se thin film was vaporized on the cathode surface in the same conditon of vacuum (3?0-4 Pa) after the deposition of functional layers in OLEDs was completed. The luminance-voltage-current densities and electroluminesce spectra of green OLEDs (the device structure is ITO/CuPc/NPB/Alq3 :C-545T/Alq3/LiF/Al. )before and after encapsulation are compared. The research shows that the current density-voltage and electroluminesce spectrum of OLEDs are scarcely influenced by MgF2/Se encapsulation layer and both of their

  8. Beam-induced energy deposition issues in the Very Large Hadron Collider

    CERN Document Server

    Mokhov, N V; Foster, G W

    2001-01-01

    Energy deposition issues are extremely important in the Very Large Hadron Collider (VLHC) with huge energy stored in its 20 TeV (Stage-1) and 87.5 TeV (Stage-2) beams. The status of the VLHC design on these topics, and possible solutions of the problems are discussed. Protective measures are determined based on the operational and accidental beam loss limits for the prompt radiation dose at the surface, residual radiation dose, ground water activation, accelerator components radiation damage and quench stability. The beam abort and beam collimation systems are designed to protect accelerator from accidental and operational beam losses, IP region quadrupoles from irradiation by the products of beam-beam collisions, and to reduce the accelerator-induced backgrounds in the detectors. (7 refs).

  9. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  10. Beam induced deposition of platinum using a helium ion microscope

    NARCIS (Netherlands)

    Sanford, C.A.; Stern, L.; Barriss, L.; Farkas, L.; DiManna, M.; Mello, R.; Maas, D.J.; Alkemade, P.F.A.

    2009-01-01

    Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due to helium’s electrical properties and sample interaction characteristics relative to gallium, it is like

  11. Beam induced deposition of platinum using a helium ion microscope

    NARCIS (Netherlands)

    Sanford, C.A.; Stern, L.; Barriss, L.; Farkas, L.; DiManna, M.; Mello, R.; Maas, D.J.; Alkemade, P.F.A.

    2009-01-01

    Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due to helium's electrical properties and sample interaction characteristics relative to gallium, it is like

  12. Sub-10 nm focused electron beam induced deposition

    NARCIS (Netherlands)

    Van Dorp, W.F.

    2008-01-01

    Work started with a critical review of literature from the past 70-odd years. The review shows that the physical processes occurring in EBID are generally well understood. By combining models for electron scattering in a solid and electron beam induced heating and knowledge of growth regimes, the ma

  13. Prolactin induces phosphorylation of Tyr694 of Stat5 (MGF), a prerequisite for DNA binding and induction of transcription.

    OpenAIRE

    Gouilleux, F; Wakao, H; Mundt, M; Groner, B.

    1994-01-01

    Mammary gland factor (MGF) is a transcription factor discovered initially in the mammary epithelial cells of lactating animals. It confers the lactogenic hormone response to the milk protein genes. We reported recently the isolation of the cDNA encoding MGF. MGF is a novel member of the cytokine-regulated transcription factor gene family. Members of this gene family mediate interferon alpha/beta and interferon gamma induction of gene transcription, as well as the response to epidermal growth ...

  14. Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition

    International Nuclear Information System (INIS)

    Cu thin films are deposited on Si (100) substrates by neutral cluster beams and ionized cluster beams. The atomic diffusion and interface reaction between the Cu films and the Si substrates of as-deposited and annealed at different temperatures (230°C, 450°C, 500°C and 600°C) are investigated by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Some significant results are obtained on the following aspects: (1) For the Cu/Si(100) samples prepared by neutral cluster beams and ionized cluster beams at Va = 0kV, atomic diffusion phenomena are observed clearly in the as-deposited samples. With the increase of annealing temperature, the interdiffusion becomes more apparent. However, the diffusion intensities of the RBS spectra of the Cu/Si(100) films using neutral cluster beams are always higher than that of the Cu/Si(100) films using ionized cluster beams at Va=0kV in the as-deposited and samples annealed at the same temperature. The compound of Cu3Si is observed in the as-deposited samples. (2) For the Cu/Si(100) samples prepared by ionized cluster beams at Va=1, 3, 5kV, atomic diffusion phenomena are observed in the as-deposited samples at Va=1, 5kV. For the samples prepared at Va = 3kV, the interdiffusion phenomenon is observed until 500°C annealing temperature. The reason for the difference is discussed. (atomic and molecular physics)

  15. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    Science.gov (United States)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  16. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan; Liu Hongxue; Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Gu, Man [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Khokhlov, Mikhail; Wolf, Stuart A. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Guilford College, Greensboro, North Carolina 27410 (United States)

    2013-01-14

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  17. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    Science.gov (United States)

    Comes, Ryan; Gu, Man; Khokhlov, Mikhail; Liu, Hongxue; Lu, Jiwei; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  18. Tribological properties of ion beam deposited diamond-like carbon film on silicon nitride

    International Nuclear Information System (INIS)

    The present article reports on the physical characterization and tribological properties of diamond-like carbon (DLC) films deposited on structural Si3N4 substrates. The films were deposited by the direct ion beam deposition technique. The ion beam was produced by plasma discharge of pre-mixed methane and hydrogen gas in a Kaufman-type ion source. The deposited films were found to be amorphous and contained about 70% carbon and 30% hydrogen. The friction coefficient of an uncoated Si3N4 ball on a DLC coated Si3N4 disc starts at about 0.2, then decreases rapidly to 0.1-0.15 with increasing sliding distance. Increasing humidity results in a slight increase in friction coefficient, but a significant decrease in wear factor. The wear factor for the tests at ≅60% rh (relative humidity) are about an order of magnitude smaller than the tests at 3% rh. (orig.)

  19. Birth: A Neutral Beam Deposition Code for Non-Circular Tokamak Plasma

    International Nuclear Information System (INIS)

    A new neutral beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross-section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical CPU time on a KL DEC-10 computer is 10--20 s and 5--10 s with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo beam deposition codes. The power deposition profile calculated by this code is in good agreement with that calculated by the Monte Carlo code which was developed to calculate the complete behaviors of the fast ions in circular plasmas

  20. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    Science.gov (United States)

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  1. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    Science.gov (United States)

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly. PMID:12689203

  2. Role of MgF2 on properties of glass–ceramics

    Indian Academy of Sciences (India)

    M Ghasemzadeh; A Nemati

    2012-10-01

    Formation of machinable glass–ceramic in the system MgO–SiO2–Al2O3–K2O–B2O3–F with and without addition of MgF2 has been investigated. Crystallization of glass sample was done by controlled thermal heat treatment at nucleation and crystallization temperatures. The results showed that MgF2 in high concentration had a synergistic effect and enhanced the formation of interlockedmica crystals. Non-isothermal DTA experiments showed that the crystallization activation energies of base glasses were changed in the range of 235–405 kJ/mol, while the crystallization activation energies of samples with addition of MgF2 were changed in the range of 548–752 kJ/mol.

  3. Electronic properties of ion implanted crystalline polymer thin film deposited by ionized cluster beam

    International Nuclear Information System (INIS)

    Polyethylene thin film deposited by the ionized cluster beam deposition technique shows preferential crystal orientation at optimum deposit condition, and the lattice parameters of the crystalline PE film are in good agreement with those of the single crystal PE. The crystalline PE film reveals that the number of side chains is reduced. The conductivity of Li+, Na+ and K+ implanted crystalline PE films has a close correlation with defects generated by ion irradiation, and the conduction mechanism turns out to be the one-dimensional hopping conduction. (orig.)

  4. BIRTH: a beam deposition code for non-circular tokamak plasmas

    International Nuclear Information System (INIS)

    A new beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical cpu time on a DEC-10 computer is 10 - 20 seconds and 5 - 10 seconds with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo codes. The power deposition profile calculated by this code is in good agreement with that calculated by a Monte Carlo code. (author)

  5. Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

    NARCIS (Netherlands)

    Botman, A.; Mulders, J.J.L.; Hagen, C.W.

    2009-01-01

    The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast ‘point-and-shoot’ creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One sig

  6. Investigation of morphological changes in platinum-containing nanostructures created by electron-beam-induced deposition

    NARCIS (Netherlands)

    Botman, A.; Hesselberth, M.; Mulders, J.J.L.

    2008-01-01

    Focused electron-beam-induced deposition (EBID) allows the rapid fabrication of three-dimensional nanodevices and metallic wiring of nanostructures, and is a promising technique for many applications in nanoresearch. The authors present two topics on platinum-containing nanostructures created by EBI

  7. Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

    Science.gov (United States)

    Khan, A. A.; Woollam, J. A.; Chung, Y.; Banks, B.

    1983-01-01

    Amorphous, 'diamond-like' carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined.

  8. Three-dimensional Nanostructures Fabricated by Ion-Beam-Induced Deposition

    NARCIS (Netherlands)

    Chen, P.

    2010-01-01

    The direct writing technology known as ion-beam-induced deposition (IBID) has been attracting attention mainly because of its high degree of flexibility of locally prototyping three-dimensional (3D) nanostructures. These high-resolution nanostructures have various research applications. However, no

  9. Coating of pellet pressing tool with 12C by ion beam deposition

    International Nuclear Information System (INIS)

    The pressing tools, used in the preparation of the samples needed for example for such nuclear elemental analysis methods as PIXE, PIGE and RBS, have been coated with a diamond-type 12C-layer by ion beam deposition. Using carbon-coated pressing tools prepared in this way contamination of the sample surfaces during the pill pressing operation is avoided. (orig.)

  10. A comparison of neon versus helium ion beam induced deposition via Monte Carlo simulations.

    Science.gov (United States)

    Timilsina, Rajendra; Smith, Daryl A; Rack, Philip D

    2013-03-22

    The ion beam induced nanoscale synthesis of PtCx (where x ∼ 5) using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated by performing Monte Carlo simulations of helium and neon ions. The helium beam leads to more lateral growth relative to the neon beam because of its larger interaction volume. The lateral growth of the nanopillars is dominated by molecules deposited via secondary electrons in both the simulations. Notably, the helium pillars are dominated by SE-I electrons whereas the neon pillars are dominated by SE-II electrons. Using a low precursor residence time of 70 μs, resulting in an equilibrium coverage of ∼4%, the neon simulation has a lower deposition efficiency (3.5%) compared to that of the helium simulation (6.5%). At larger residence time (10 ms) and consequently larger equilibrium coverage (85%) the deposition efficiencies of helium and neon increased to 49% and 21%, respectively; which is dominated by increased lateral growth rates leading to broader pillars. The nanoscale growth is further studied by varying the ion beam diameter at 10 ms precursor residence time. The study shows that total SE yield decreases with increasing beam diameters for both the ion types. However, helium has the larger SE yield as compared to that of neon in both the low and high precursor residence time, and thus pillars are wider in all the simulations studied.

  11. Tribological properties of boron nitride synthesized by ion beam deposition

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  12. Thermal imaging for assessment of electron-beam freeform fabrication (EBF3) additive manufacturing deposits

    Science.gov (United States)

    Zalameda, Joseph N.; Burke, Eric R.; Hafley, Robert A.; Taminger, Karen M.; Domack, Christopher S.; Brewer, Amy; Martin, Richard E.

    2013-05-01

    Additive manufacturing is a rapidly growing field where 3-dimensional parts can be produced layer by layer. NASA's electron beam freeform fabrication (EBF3) technology is being evaluated to manufacture metallic parts in a space environment. The benefits of EBF3 technology are weight savings to support space missions, rapid prototyping in a zero gravity environment, and improved vehicle readiness. The EBF3 system is composed of 3 main components: electron beam gun, multi-axis position system, and metallic wire feeder. The electron beam is used to melt the wire and the multi-axis positioning system is used to build the part layer by layer. To insure a quality deposit, a near infrared (NIR) camera is used to image the melt pool and solidification areas. This paper describes the calibration and application of a NIR camera for temperature measurement. In addition, image processing techniques are presented for deposit assessment metrics.

  13. Ion beam assisted deposition of Ti–Si–C thin films

    Directory of Open Access Journals (Sweden)

    A. Twardowska

    2009-11-01

    Full Text Available Purpose: Deposition of hard thin multilayer coatings is a common practice in improving the performance of tools for many different applications. From this aspect Ti3SiC2, due to its lamellar structure and unique combination of properties is a potential interlayer material candidate for thermo-mechanical application.Design/methodology/approach: Multiphase Ti–Si–C thin films were deposited by the ion beam assisted deposition (IBAD technique from a single Ti3SiC2 compound target on an AISI 316L steel substrate. To optimize the deposition process, Monte Carlo simulations were performed; the range of the deposition parameters was determined and then experimentally verified. Scanning and transmission electron microscopies were used to examine the microstructure and quality of the deposited films. Mechanical properties were determined by nanoindentation tests.Findings: The deposited film was flat, smooth and dense with small crystalline particles. The hardness HIT of coated substrates was in the range 2.7 to 5.3 GPa. The average calculated value reduced elastic modulus EIT for coated substrates was 160 GPa. The hardness and reduced elastic modulus for uncoated substrates were HIT = 4.4 GPa and EIT = 250 GPa, respectively.Practical implications: PVD techniques enable low substrate temperature deposition, preferred due to the thermal limitations of the metallic substrates commonly used in industrial applications. The aim of this work is low temperature deposition of Ti-Si-C film, from a single Ti3SiC2 compound target, on 316L steel substrate, using the IBAD technique, known for excellent film connection to the substrate.Originality/value: Ion beam assisted deposition parameters were calculated and experimentally verified.

  14. Novel MGF-based expressions for the average bit error probability of binary signalling over generalized fading channels

    KAUST Repository

    Yilmaz, Ferkan

    2014-04-01

    The main idea in the moment generating function (MGF) approach is to alternatively express the conditional bit error probability (BEP) in a desired exponential form so that possibly multi-fold performance averaging is readily converted into a computationally efficient single-fold averaging - sometimes into a closed-form - by means of using the MGF of the signal-to-noise ratio. However, as presented in [1] and specifically indicated in [2] and also to the best of our knowledge, there does not exist an MGF-based approach in the literature to represent Wojnar\\'s generic BEP expression in a desired exponential form. This paper presents novel MGF-based expressions for calculating the average BEP of binary signalling over generalized fading channels, specifically by expressing Wojnar\\'s generic BEP expression in a desirable exponential form. We also propose MGF-based expressions to explore the amount of dispersion in the BEP for binary signalling over generalized fading channels.

  15. Fe:O:C grown by focused-electron-beam-induced deposition: magnetic and electric properties

    Energy Technology Data Exchange (ETDEWEB)

    Lavrijsen, R; Schoenaker, F J; Ellis, T H; Barcones, B; Kohlhepp, J T; Swagten, H J M; Koopmans, B [Department of Applied Physics, Center for NanoMaterials and COBRA Research Institute, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Cordoba, R; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50009 Zaragoza (Spain); De Teresa, J M; Magen, C [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain); Trompenaars, P; Mulders, J J L, E-mail: r.lavrijsen@tue.nl, E-mail: deteresa@unizar.es [FEI Electron Optics, Achtseweg Noord 5, 5651 GG Eindhoven (Netherlands)

    2011-01-14

    We systematically study the effect of oxygen content on the magneto-transport and microstructure of Fe:O:C nanowires deposited by focused-electron-beam-induced (FEBID) deposition. The Fe/O ratio can be varied with an Fe content varying between {approx} 50 and 80 at.% with overall low C content ({approx}16 {+-} 3 at.%) by adding H{sub 2}O during the deposition while keeping the beam parameters constant as measured by energy dispersive x-ray (EDX) spectroscopy. The room-temperature magnetic properties for deposits with an Fe content of 66-71 at.% are investigated using the magneto-optical Kerr effect (MOKE) and electric magneto-transport measurements. The nanostructure of the deposits is investigated through cross-sectional high-resolution transmission electron microscopy (HRTEM) imaging, allowing us to link the observed magneto-resistance and resistivity to the transport mechanism in the deposits. These results demonstrate that functional magnetic nanostructures can be created, paving the way for new magnetic or even spintronics devices.

  16. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    Science.gov (United States)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  17. Effect of focused ion beam deposition induced contamination on the transport properties of nano devices

    International Nuclear Information System (INIS)

    Focused ion beam (FIB) deposition produces unwanted particle contamination beyond the deposition point. This is due to the FIB having a Gaussian distribution. This work investigates the spatial extent of this contamination and its influence on the electrical properties of nano-electronic devices. A correlation study is performed on carbon-nanotube (CNT) devices manufactured using FIB deposition. The devices are observed using transmission electron microscopy (TEM) and these images are correlated with device electrical characteristics. To discover how far Pt-nanoparticle contamination occurs along a CNT after FIB electrical contact deposition careful TEM inspections are performed. The results show FIB deposition efficiently improves electrical contact; however, the practice is accompanied by serious particle contamination near deposition points. These contaminants include metal particles and amorphous elements originating from precursor gases and residual water molecules in the vacuum chamber. Pt-contamination extends for approximately 2 μm from the point of FIB contact deposition. These contaminants cause current fluctuations and alter the transport characteristics of devices. It is recommended that nano-device fabrication occurs at a distance greater than 2 μm from the FIB deposition of an electrical contact. (paper)

  18. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO

    Science.gov (United States)

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter

    2014-01-01

    Summary The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures. PMID:25161851

  19. Electron-beam induced deposition and autocatalytic decomposition of Co(CO)3NO.

    Science.gov (United States)

    Vollnhals, Florian; Drost, Martin; Tu, Fan; Carrasco, Esther; Späth, Andreas; Fink, Rainer H; Steinrück, Hans-Peter; Marbach, Hubertus

    2014-01-01

    The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) is studied for two precursors: iron pentacarbonyl, Fe(CO)5, and cobalt tricarbonyl nitrosyl, Co(CO)3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM) and scanning transmission X-ray microscopy (STXM), including near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It has previously been shown that Fe(CO)5 decomposes autocatalytically on Fe seed layers (EBID) and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO)3NO and compare it to results obtained from Fe(CO)5. Co(CO)3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO)5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO)3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  20. Electron-beam induced deposition and autocatalytic decomposition of Co(CO3NO

    Directory of Open Access Journals (Sweden)

    Florian Vollnhals

    2014-07-01

    Full Text Available The autocatalytic growth of arbitrarily shaped nanostructures fabricated by electron beam-induced deposition (EBID and electron beam-induced surface activation (EBISA is studied for two precursors: iron pentacarbonyl, Fe(CO5, and cobalt tricarbonyl nitrosyl, Co(CO3NO. Different deposits are prepared on silicon nitride membranes and silicon wafers under ultrahigh vacuum conditions, and are studied by scanning electron microscopy (SEM and scanning transmission X-ray microscopy (STXM, including near edge X-ray absorption fine structure (NEXAFS spectroscopy. It has previously been shown that Fe(CO5 decomposes autocatalytically on Fe seed layers (EBID and on certain electron beam-activated surfaces, yielding high purity, polycrystalline Fe nanostructures. In this contribution, we investigate the growth of structures from Co(CO3NO and compare it to results obtained from Fe(CO5. Co(CO3NO exhibits autocatalytic growth on Co-containing seed layers prepared by EBID using the same precursor. The growth yields granular, oxygen-, carbon- and nitrogen-containing deposits. In contrast to Fe(CO5 no decomposition on electron beam-activated surfaces is observed. In addition, we show that the autocatalytic growth of nanostructures from Co(CO3NO can also be initiated by an Fe seed layer, which presents a novel approach to the fabrication of layered nanostructures.

  1. Preparation of MgF2 Translucent Ceramic by Hot Pressing Sintering

    Institute of Scientific and Technical Information of China (English)

    PENG Minhong; CAO Weiping; SONG Jinhong

    2015-01-01

    The aim of this work was to prepare MgF2 translucent ceramic by using nanopowders as raw materials and to study its properties.The MgF2 nanopowders were prepared using chemical precipitation and the translucent ceramics were fabricated by hot-pressing sintering in a vacuum environment. X-ray diffraction analysis showed that the powders were homogeneous with an average particles size about 13 nm. By comparing the results of transmission electron microscopy, it could be concluded that the porous structure of precursor powders could be improved by calcination. The SEM images of MgF2 indicated that the as-prepared ceramics were well densified at 900℃. The photo of the ceramic sample showed that high translucence is a main breakthrough in the ifeld of MgF2 materials preparation. For the translucent ceramic sample sintered at 900℃, the Vickers hardness and density were 5.55 GPa and 98.74%, respectively, and its highest transmittance with thickness of 1mm reached 87% in the wavelength from 2.5 µm to 10 µm, all which made it advantageous to be a kind of infrared windows and dome materials.

  2. Angular distribution of species in pulsed energy beam deposition of oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, M., E-mail: mnistor@infim.ro [National Institute for Lasers, Plasmas and Radiation Physics, L22 P.O. Box MG-36, 77125 Bucharest-Magurele (Romania); Gherendi, F.; Mandache, N.B. [National Institute for Lasers, Plasmas and Radiation Physics, L22 P.O. Box MG-36, 77125 Bucharest-Magurele (Romania)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Thickness profiles of Ba{sub x}Sr{sub 1-x}TiO{sub 3} thin films were measured. Black-Right-Pointing-Pointer Comparison between pulsed laser (PLD) and pulsed electron beam deposition (PED). Black-Right-Pointing-Pointer The film thicknesses profile of PED has a slightly broader shape than that of PLD. Black-Right-Pointing-Pointer The film stoichiometry is preserved at all angles. - Abstract: Pulsed energy beam deposition methods like pulsed-laser deposition (PLD) or pulsed-electron beam deposition (PED) allow the formation of smooth, dense and crystalline oxide thin films. The angular distribution of the ablated flux from the target and the thin film thickness profile were extensively studied for PLD for a wide range of materials and growth conditions. In the case of complex oxide compounds, the angular distribution of the various species emitted by the target will determine the precise composition of the films. In this work we report on the determination of the angular distributions of the species emitted from a Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST) target. A comparison between these results obtained by PED and PLD methods is presented and discussed in the frame of Anisimov's model. A slightly broader shape of the angular distribution for PED than that for PLD is explained taking into account the differences in the spot size and fluence between the pulsed electron beam and laser beam and a small collisional broadening of the angular distribution in the case of PED. The stoichiometry is preserved at all angles.

  3. An orientation competition in yttria-stabilized zirconia thin films fabricated by ion beam assisted sputtering deposition

    International Nuclear Information System (INIS)

    A previously found orientation competition in ion beam sputtered yttria-stabilized zirconia thin films was studied in detail. The effects of sputtering energy and deposition angle were analyzed in ion sputtered films without assisting ions bombardment. It is found that for normally deposited films, (001) and (011) orientations are favored at low and high sputtering energy respectively. For inclined substrate deposited films, as deposition angle increases, (001), (011) and (111) orientations are advantaged in turn. The results can be attributed to the in-plane energy exchange of deposition atom and adatoms. In ion beam assisting deposited YSZ films of low assisting ions energy and current, a (001) oriented biaxial texture is gradually induced as ion energy increased. In the case of ion beam assisted inclined deposition of 45°, (001) orientation is enhanced and two preferential in-plane orientations are found coexist.

  4. Deposition of diamond like carbon films by using a single ion gun with varying beam source

    Institute of Scientific and Technical Information of China (English)

    JIANG Jin-qiu; Chen Zhu-ping

    2001-01-01

    Diamond like carbon films have been successfully deposited on the steel substrate, by using a single ion gun with varying beam source. The films may appear blue, yellow and transparent in color, which was found related to contaminants from the sample holder and could be avoided. The thickness of the films ranges from tens up to 200 nanometers, and the hardness is in the range 20 to 30 GPa. Raman analytical results reveal the films are in amorphous structure. The effects of different beam source on the films structure are further discussed.

  5. Functional nickel-based deposits synthesized by focused beam induced processing

    Science.gov (United States)

    Córdoba, R.; Barcones, B.; Roelfsema, E.; Verheijen, M. A.; Mulders, J. J. L.; Trompenaars, P. H. F.; Koopmans, B.

    2016-02-01

    Functional nanostructures fabricated by focused electron/ion beam induced processing (FEBIP/FIBIP) open a promising route for applications in nanoelectronics. Such developments rely on the exploration of new advanced materials. We report here the successful fabrication of nickel-based deposits by FEBIP/FIBIP using bis(methyl cyclopentadienyl)nickel as a precursor. In particular, binary compounds such as nickel oxide (NiO) are synthesized by using an in situ two-step process at room temperature. By this method, as-grown Ni deposits transform into homogeneous NiO deposits using focused electron beam irradiation under O2 flux. This procedure is effective in producing highly pure NiO deposits with resistivity of 2000 Ωcm and a polycrystalline structure with face-centred cubic lattice and grains of 5 nm. We demonstrate that systems based on NiO deposits displaying resistance switching and an exchange-bias effect could be grown by FEBIP using optimized parameters. Our results provide a breakthrough towards using these techniques for the fabrication of functional nanodevices.

  6. Adherence of ion beam sputter deposited metal films on H-13 steel

    Science.gov (United States)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.

  7. Microanalyses of the hydroxyl-poly-calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Thin calcium phosphate coatings on titanium alloy substrates wereprepared by Ar+ ion beam assisted deposition (IBAD) from hydroxyl-poly-calciumsodium phosphate (HPPA) target. The coatings were analyzed by XRD, FTIR, XPS.These analyses revealed that the as-deposited films were amorphous or no apparentcrystallinity. No distinct absorption band of the hydroxyl group was observed in FTIRspectra of the coatings but new absorption bands were presented for CO3-2. Thecalcium to phosphorous ratio of these coatings in different IBAD conditions variedfrom 0.46 to 3.36.

  8. Microanalyses of the hydroxyl—poly—calcium sodium phosphate coatings produced by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LIUZhong-Yang; WANGChang-Xing; 等

    2002-01-01

    Thin calcium phosphate catings on titanium alloy substrates were prepared by Ar+ ion beam assisted deposition(IBAD) from hydroxyl-poly-calcium sodium phosphate(HPPA) target.The coatings were analyzed by XRD,FTIR,XPS,These analyses revealed that the as-deposited films were amorphous or no apparent crystallinity.No distinct absorption band of the hydroxyl group was observed in FTIR spectra of the coatings but new absorption bands were presented for CO3-2,The calcium to phosphorous ratio of these catings in different IBAD conditions varied from 0.46 to 3.36.

  9. Nanoscale Soldering of Positioned Carbon Nanotubes using Highly Conductive Electron Beam Induced Gold Deposition

    DEFF Research Database (Denmark)

    Madsen, Dorte Nørgaard; Mølhave, Kristian; Mateiu, Ramona Valentina;

    2003-01-01

    We have developed an in-situ method for controlled positioning of carbon nanotubes followed by highly conductive contacting of the nanotubes, using electron beam assisted deposition of gold. The positioning and soldering process takes place inside an Environmental Scanning Electron Microscope (E...... in a carbon matrix. Nanoscale soldering of multi-walled carbon nanotubes (MWNT) onto microelectrodes was achieved by deposition of a conducting gold line across a contact point between nanotube and electrode. The solderings were found to be mechanically stronger than the carbon nanotubes. We have positioned...

  10. A novel electron beam evaporation technique for the deposition of superconducting thin films

    Science.gov (United States)

    Krishna, M. G.; Muralidhar, G. K.; Rao, K. N.; Rao, G. M.; Mohan, S.

    1991-05-01

    Superconducting thin films of BiSrCaCuO have been deposited using a novel electron beam evaporation technique. In this technique the crucible has a groove around its circumference and rotates continuously during deposition. The source material is loaded in the form of pellets of the composite. Both oxides as well as flourides have been used in the starting material and a comparison of the film properties has been made. The best film was obtained on a MgO(100) substrate with a Tc onset at 85 K and Tc zero at 77 K using calcium flouride in the source material.

  11. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    Science.gov (United States)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  12. Organic molecular beam deposition system and initial studies of organic layer growth

    Energy Technology Data Exchange (ETDEWEB)

    Andreasson, M [Applied Semiconductor Physics, Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Ilver, L [Department of Experimental Physics, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Kanski, J [Department of Experimental Physics, Chalmers University of Technology, S-41296 Goeteborg (Sweden); Andersson, T G [Applied Semiconductor Physics, Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden)

    2006-09-01

    This work describes an organic molecular beam deposition system with substrate entry/exit chamber, buffer chamber and with the possibility to transfer substrate from a III-V molecular beam deposition system. Flux calibrations of organic molecules and the initial growth of organic layers are described. For this purpose, the molecules 3,4,9,10 perylene tetra carboxylic dianhydride and copper phtalocyanine were used. Layers were grown on oxidized and hydrogen passivated Si(100), Indium tin oxide and glass respectively. The growth was investigated with atomic force microscopy, reflection high energy electron diffraction and ultraviolet photoemission spectroscopy. An investigation with x-ray photoelectron and Raman spectroscopy on the effect of atmospheric exposure is also included, showing little effect of surface pollution when the samples were handled carefully. The initial formation (monolayers) of copper phtalocyanine thin films was studied by ultraviolet photoemission spectroscopy.

  13. Ion beam deposition of amorphous carbon films with diamond like properties

    Science.gov (United States)

    Angus, John C.; Mirtich, Michael J.; Wintucky, Edwin G.

    1982-01-01

    Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

  14. Ion beam deposition and surface characterization of thin multi-component oxide films during growth.

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Im, J.; Smentkowski, V.; Schultz, J.A.; Auciello, O.; Gruen, D.M.; Holocek, J.; Chang, R.P.H.

    1998-01-13

    Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena which can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase.

  15. The Energy Deposition for No-air-gap Design of the TESLA Beam Dump

    International Nuclear Information System (INIS)

    In the linear electron- positron collider project TESLA, the beam dump designed as a water tank is working in a very special regime. Each pulse of the electron or positron beam should, after crossing the interaction region, be dumped in a cylindrical 10-m long water dump. The mean power to be absorbed is important being 8 MW for 250 GeV beam energy (intensity 2.04 * 1014 electrons/s) and for 400 GeV case it will be 12 MW and 2.8*1014 electrons/s. The initial project was providing a 20-cm wide air gap between the titanium vessel containing water and the concentrate outer shield. Energy deposition calculations using FLUKA code showed that the energy deposited in and thus temperature rise of the concrete shield were very high. Additional solid inner shield made of aluminium (or iron) has to be placed just behind the titanium vessel. The important production of radioactive nuclei in the air has prompted the designers to minimize the air gap. Realistically, this minimal size of the air gap was assessed to be a 2-cm wide. Also new thickness of the inner shield has been proposed - 60 cm for aluminium and 20 cm for iron. These changes called for a new set of calculations for energy deposition in both the concentrate and aluminum iron) shields. (author)

  16. In situ growth optimization in focused electron-beam induced deposition

    Directory of Open Access Journals (Sweden)

    Paul M. Weirich

    2013-12-01

    Full Text Available We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID. It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me3. For W(CO6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

  17. Precise thin film synthesis by ion beam sputter deposition; Herstellung von Praezisionsschichten mittels Ionenstrahlsputtern

    Energy Technology Data Exchange (ETDEWEB)

    Gawlitza, P.; Braun, S.; Leson, A.; Lipfert, S. [Fraunhofer-Institut fuer Werkstoffphysik und Schichttechnologie (IWS), Dresden (Germany); Nestler, M. [Roth und Rau AG, Hohenstein-Ernstthal (Germany)

    2007-04-15

    Ion beam sputter deposition (IBSD) is a promising technique for the fabrication of high performance thin films because of the well defined and adjustable particle energies, which are rather high in comparison to other PVD techniques. Recent developments concerning long-term stability and lateral uniformity of the ion beam sources strengthen the position of the IBSD technique in the field of precise thin film synthesis. Furthermore, IBSD offers a more independent choice of relevant deposition parameters like particle energy and flux, process gas pressure and deposition rate. In this paper we present our currently installed large area IBSD facility 'IonSys 1600', which was developed by Fraunhofer IWS Dresden and Roth and Rau company (Hohenstein-Ernstthal). Substrate sizes of up to 200 mm (circular) or up to 500 mm length (rectangular) can be coated and multilayer stacks with up to six different materials are possible. Tailored 1- or 2- dimensional film thickness distribution with deviations of <0.1% can be fabricated by a relative linear motion of the substrate holder above an aperture. In order to demonstrate the advantages of the IBSD technique especially for sophisticated materials and films with high requirements concerning purity, chemical composition or growth structure, several examples of deposited multilayers for various applications are presented. (orig.)

  18. Ion beam sputter deposition of TiNi shape memory alloy thin films

    Science.gov (United States)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  19. Unveiling the optical properties of a metamaterial synthesized by electron-beam-induced deposition

    CERN Document Server

    Woźniak, Paweł; Brönstrup, Gerald; Banyer, Peter; Christiansen, Silke; Leuchs, Gerd

    2015-01-01

    The direct writing using a focused electron beam allows for fabricating truly three-dimensional structures of sub-wavelength dimensions in the visible spectral regime. The resulting sophisticated geometries are perfectly suited for studying light-matter interaction at the nanoscale. Their overall optical response will strongly depend not only on geometry but also on the optical properties of the deposited material. In case of the typically used metal-organic precursors, the deposits show a substructure of metallic nanocrystals embedded in a carbonaceous matrix. Since gold-containing precursor media are especially interesting for optical applications, we experimentally determine the effective permittivity of such an effective material. Our experiment is based on spectroscopic measurements of planar deposits. The retrieved permittivity shows a systematic dependence on the gold particle density and cannot be sufficiently described using the common Maxwell-Garnett approach for effective medium.

  20. Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

    International Nuclear Information System (INIS)

    The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

  1. Effect of deuterium ion beam irradiation onto the mirror-like pulsed laser deposited thin films of rhodium

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A.T.T., E-mail: abu@iitg.ernet.in [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Khare, Alika [Laser and Photonics Lab, Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Rao, C.V.S.; Vala, Sudhirsinh; Makwana, R.J.; Basu, T.K. [Neutronics Lab, Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2015-01-01

    Highlights: • Rh mirror like thin films are fabricated by PLD technique for FM application. • Rh thin film FMs are irradiated with 10, 20, and 30 keV D ion beam. • Effect of D ion beam irradiation on Rh FM’s reflectivity is investigated. - Abstract: The effect of deuterium ion beam irradiation on the reflectivity of mirror-like pulsed laser deposited (PLD) thin film of rhodium is reported. The deposition parameters; target-substrate distance and background helium gas pressure were optimized to obtain the good quality rhodium films, of higher thickness, oriented preferentially in (1 1 1) plane. The rhodium thin films deposited at optimum PLD parameters were exposed to 10, 20, and 30 keV deuterium ion beam. The changes in surface morphology and UV–Visible–FIR reflectivity of mirror-like rhodium thin films, as a function of energy of deuterium ion beam, after exposure are reported.

  2. Further studies on MgF(2)-overcoated aluminum mirrors with highest reflectance in the vacuum ultraviolet.

    Science.gov (United States)

    Canfield, L R; Hass, G; Waylonis, J E

    1966-01-01

    MgF(2)-overcoated aluminum films with high-vacuum ultraviolet reflectance have been the subject of further investigations of the preparation parameters affecting their reflectance, and of the effect of aging and exposure to conditions likely to be encountered in their applications. Techniques for monitoring the thickness of MgF(2) by reflectance measurements with ultraviolet light and by complete evaporation of weighed quantities of MgF(2) are described. It is shown that MgF(2)-protected aluminum mirrors retain their high-vacuum ultraviolet reflectance during extended exposure to air, ultraviolet irradiation, and bombardment with 1-MeV electrons and 5-MeV protons, and that such mirrors can be easily cleaned if contaminated with oil. PMID:20048784

  3. Spatial chemistry evolution during focused electron beam-induced deposition: origins and workarounds

    International Nuclear Information System (INIS)

    The successful application of functional nanostructures, fabricated via focused electron-beam-induced deposition (FEBID), is known to depend crucially on its chemistry as FEBID tends to strong incorporation of carbon. Hence, it is essential to understand the underlying mechanisms which finally determine the elemental composition after fabrication. In this study we focus on these processes from a fundamental point of view by means of (1) varying electron emission on the deposit surface; and (2) changing replenishment mechanism, both driven by the growing deposit itself. First, we revisit previous results concerning chemical variations in nanopillars (with a quasi-1D footprint) depending on the process parameters. In a second step we expand the investigations to deposits with a 3D footprint which are more relevant in the context of applications. Then, we demonstrate how technical setups and directional gas fluxes influence final chemistries. Finally, we put the findings in a bigger context with respect to functionalities which demonstrates the crucial importance of carefully set up fabrication processes to achieve controllable, predictable and reproducible chemistries for FEBID deposits as a key element for industrially oriented applications. (orig.)

  4. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  5. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza

    2015-02-04

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  6. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  7. Molecular beam deposition and characterization of thin organic films on metals for applications in organic electronics

    Energy Technology Data Exchange (ETDEWEB)

    Witte, G.; Woell, C. [Physikalische Chemie I, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

    2008-03-15

    The deposition of organic thin films on metal substrates using molecular beam deposition will be reviewed with a special emphasis on molecules which exhibit high charge carrier mobilities and are thus suited to be used as organic semiconductors (OSCs), namely pentacene, rubrene and perylene. Special emphasis will be on aspects of organic molecular beam deposition (OMBD) relevant for the device performance in organic field effect transistors (OFETs), in particular with regard to avoiding or minimizing structural defects at support/OSC interfaces. In addition, another aspect governing - and often limiting - charge injection at electrodes into an OSC, electronic level alignment at molecule/metal interfaces, are discussed in the context of recent accurate ab-initio electronic structure calculations. Finally, we present a novel experimental approach to determine charge transport properties of defect-free, nm-sized OSCs where extrinsic contributions to e.g. charge carrier mobilities can be strictly excluded, thus opening the way towards the determination of true intrinsic OSC properties. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  9. Review of magnetic nanostructures grown by focused electron beam induced deposition (FEBID)

    Science.gov (United States)

    De Teresa, J. M.; Fernández-Pacheco, A.; Córdoba, R.; Serrano-Ramón, L.; Sangiao, S.; Ibarra, M. R.

    2016-06-01

    We review the current status of the use of focused electron beam induced deposition (FEBID) for the growth of magnetic nanostructures. This technique relies on the local dissociation of a precursor gas by means of an electron beam. The most promising results have been obtained using the Co2(CO)8 precursor, where the Co content in the grown nanodeposited material can be tailored up to more than 95 at.%. Functional behaviour of these Co nanodeposits has been observed in applications such as arrays of magnetic dots for information storage and catalytic growth, magnetic tips for scanning probe microscopes, nano-Hall sensors for bead detection, nano-actuated magnetomechanical systems and nanowires for domain-wall manipulation. The review also covers interesting results observed in Fe-based and alloyed nanodeposits. Advantages and disadvantages of FEBID for the growth of magnetic nanostructures are discussed in the article as well as possible future directions in this field.

  10. Thermal/residual stress in an electron beam physical vapor deposited thermal barrier coating system

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, J.; Jordan, E.H.; Barber, B.; Gell, M. [Univ. of Connecticut, Storrs, CT (United States)

    1998-10-09

    Elastic-plastic finite element models are used to define the thermal/residual stress state responsible for the observed failure behavior of an electron beam physical vapor deposited yttria stabilized zirconia thermal barrier coating on a Pt-Al bond coat. The failures were observed to start at grain boundary ridges, some of which evolved into oxide filled cavities. Finite element models are made of the actual interface geometries through the use of metallographic sectioning and imaging processing. There is a one to one correspondence of calculated tension in the oxide layer and the observed localized damage. Purely elastic analysis failed to show some important tensile regions associated with the observed failure.

  11. Ion beam assisted deposition of organic molecules: a physical way to realize OLED structures

    Science.gov (United States)

    Moliton, André; Antony, Rémi; Troadec, David; Ratier, Bernard

    2000-05-01

    We demonstrate how the quantum efficiency of an organic light-emitting diode can be improved by a physical way based on the ion beam assisted deposition: the recombination current can be increased by an enhancement of the minority carrier injection while the total current can be decreased by generation of electron traps which reduced the majority current. The quantum efficiency of fluorescence can be also improved by a layer densification with a limitation of the nonradiative centers. As a result, the quantum efficiency of the structure ITO/Helium assisted Alq3/unassisted Alq3/Ca/Al is improved (by around a factor 10) in relation with a virgin structure.

  12. Electroluminescence and its excitation mechanism of SiOx films deposited by electron-beam evaporation

    International Nuclear Information System (INIS)

    Blue electroluminescence from SiOx films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiOx films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields

  13. Energy deposition in selected-mammalian cell for several-MeV single-proton beam

    Science.gov (United States)

    Ding, K.; Yu, Z.

    2007-05-01

    The phenomena resulting from interaction between ion beam and mammalian cell pose important problems for biological applications. Classic Bethe-Bloch theory utilizing attached V79 mammalian cell has been conducted in order to establish the stopping powers of the mammalian cell for several-MeV single-proton microbeam. Based on the biological structure of the mammalian cell, a physical model is proposed which presumes that the attached cell is simple MWM model. According to this model and Monte Carlo simulation, we studied the energy deposition and its ratio on the selected attached mammalian cell for MeV proton implantation.

  14. Dispersive ground plane core-shell type optical monopole antennas fabricated with electron beam induced deposition.

    Science.gov (United States)

    Acar, Hakkı; Coenen, Toon; Polman, Albert; Kuipers, Laurens Kobus

    2012-09-25

    We present the bottom-up fabrication of dispersive silica core, gold cladding ground plane optical nanoantennas. The structures are made by a combination of electron-beam induced deposition of silica and sputtering of gold. The antenna lengths range from 300 to 2100 nm with size aspect ratios as large as 20. The angular emission patterns of the nanoantennas are measured with angle-resolved cathodoluminescence spectroscopy and compared with finite-element methods. Good overall correspondence between the the measured and calculated trends is observed. The dispersive nature of these plasmonic monopole antennas makes their radiation profile highly tunable. PMID:22889269

  15. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  16. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO2 based thin film catalysts is discussed.

  17. Influence of laser power on deposition of the chromium atomic beam in laser standing wave

    Institute of Scientific and Technical Information of China (English)

    ZHANG WenTao; ZHU BaoHua; ZHANG BaoWu; LI TongBao

    2009-01-01

    One-dimensional deposition of collimated Cr atomic beam focused by a near-resonant Gaussian standing-laser field with wavelength of 425.55 nm is examined from particle-optics approach by using an adaptive step size, fourth-order Runge-Kutta type algorithm. The influence of laser power on depo-sition of atoms in laser standing wave is discussed and the simulative result shows that the FWHM of nanometer stripe is 102 nm and contrast is 2:1 with laser power equal to 3 mW, the FWHM is 1.2 nm and contrast is 32:1 with laser power equal to 16 mW, but with laser power increase, equal to 50 mW, the nonmeter structure forms the multi-crests and exacerbates.

  18. Influence of laser power on deposition of the chromium atomic beam in laser standing wave

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    One-dimensional deposition of collimated Cr atomic beam focused by a near-resonant Gaussian standing-laser field with wavelength of 425.55 nm is examined from particle-optics approach by using an adaptive step size,fourth-order Runge-Kutta type algorithm.The influence of laser power on deposition of atoms in laser standing wave is discussed and the simulative result shows that the FWHM of nanometer stripe is 102 nm and contrast is 2:1 with laser power equal to 3 mW,the FWHM is 1.2 nm and contrast is 32:1 with laser power equal to 16 mW,but with laser power increase,equal to 50 mW,the nonmeter structure forms the multi-crests and exacerbates.

  19. Ion beam sputter deposition of V 2O 5 thin films

    Science.gov (United States)

    Gallasch, T.; Stockhoff, T.; Baither, D.; Schmitz, G.

    V 2O 5 thin films were deposited by means of dc-ion beam sputtering. To determine the influence of various deposition parameters, samples were characterized by X-ray diffractometry and transmission electron microscopy. Using electron energy loss spectroscopy, the oxidation state of vanadium was quantified based on the chemical shift of absorption edges. Measurement of in-plane direct current showed that the electronic conductivity varies over several orders of magnitude depending on the preparation conditions. The desired structure suitable for battery applications is achieved by sputtering under partial pressure of oxygen and suitable post-annealing under ambient atmosphere. Reversible intercalation of Li into the produced thin films was demonstrated.

  20. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Podestà, Alessandro, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo, E-mail: alessandro.podesta@mi.infn.it, E-mail: pmilani@mi.infn.it [Centro Interdisciplinare Materiali e Interfacce Nanostrutturati (C.I.Ma.I.Na.), Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy)

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  1. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    Science.gov (United States)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-12-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  2. Transmission, serologic and tissue responses in chickens vaccinated with Mycoplasma gallisepticum F strain (MG-F

    Directory of Open Access Journals (Sweden)

    Leandro S. Machado

    2016-05-01

    Full Text Available Abstract: MG-F protects chickens from MG Mycoplasmosis and monitoring is done by serology (SAR and ELISA and PCR. Histopathology is used to evaluate bird response to MG. This study evaluated MG-F profile vaccination in SPF chicken. This trial used 100 chickens, being 40 unvaccinated (G1, 40 eye-drop vaccinated at 8 weeks of age with MG-F ( Ceva Animal Health , São Paulo , SP , Brazil (G2 and 20 immunized by contact (G3 . Samples were obtained on the 8th, 12th, 15th, 18th, 20th and 24th week for SAR, ELISA and PCR. Fragments of trachea and air sac, for microscopy, were got after necropsies on the 15th and 24th week. Up to 12 weeks there was no significant difference among groups by SAR. SAR reactions appeared from the 15th week with these averages: G1 (1.7, 1.76 , 0.1, 0.15 , G2 (7.81, 7.65, 8.25, 6.29 and G3 (8.1, 8.5, 9.5, 6.16, while by ELISA it occurred after the 18th week with optical densities averages: G1 (0.19, 0.14, 0.16 , G2 (0.47, 0.45, 0.41 and G3 (0.55, 0.51, 0.51 . Positivity in G3 by PCR occurred seven weeks after exposure. At the 15th week the air sac score means were 0.20, 0.55, and 0.32 and 24th week were 0.15, 0.80 and 0.66 (p>0.05. For trachea, G2 (0.48 yielded higher score average than G1 (0.10 and G3 (0.00 on the 15th week. Changes in G3 were seen only at 24th week, being this average (1.00 significantly different (p<0,05 from G1 (0.08 and G2 (0.46. SAR and PCR detected MG-F in G3 earlier than ELISA. Higher tracheal changes for G2 and G3 as compared to G1 could be ascribed to MG-F vaccine infection.

  3. Infrared and ion beam analysis of SI/sub x/N/sub 1-x/ alloys grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Thin films of amorphous Si/sub x/N/sub 1-x/ alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm/sup -1/. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford Backscattering Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content

  4. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation

    Institute of Scientific and Technical Information of China (English)

    Jiang Ran; Meng Lingguo; Zhang Xijian; Hyung-Suk Jung; Cheol Seong Hwang

    2012-01-01

    Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates.Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al2O3.Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite.This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.

  5. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M

    2015-10-09

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  6. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. (Argonne National Lab., IL (United States)); Lin, Y.P. (Argonne National Lab., IL (United States) Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science); Schultz, J.A. (Ionwerks, Inc., Houston, TX (United States)); Schmidt, H. (Schmidt Instruments, Inc., Houston, TX (United States)); Liu, Y.L. (Argonne National Lab., IL (United States

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  7. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. [Argonne National Lab., IL (United States); Lin, Y.P. [Argonne National Lab., IL (United States)]|[Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science; Schultz, J.A. [Ionwerks, Inc., Houston, TX (United States); Schmidt, H. [Schmidt Instruments, Inc., Houston, TX (United States); Liu, Y.L. [Argonne National Lab., IL (United States)]|[Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Auciello, O. [Microelectronics Center of North Carolina, Research Triangle Park, NC (United States); Barr, T. [Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Chang, R.P.H. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science

    1992-08-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  8. Substrate effects on the electron-beam-induced deposition of platinum from a liquid precursor

    Science.gov (United States)

    Donev, Eugenii U.; Schardein, Gregory; Wright, John C.; Hastings, J. Todd

    2011-07-01

    Focused electron-beam-induced deposition using bulk liquid precursors (LP-EBID) is a new nanofabrication technique developed in the last two years as an alternative to conventional EBID, which utilizes cumbersome gaseous precursors. Furthermore, LP-EBID using dilute aqueous precursors has been demonstrated to yield platinum (Pt) nanostructures with as-deposited metal content that is substantially higher than the purity achieved by EBID with currently available gaseous precursors. This advantage of LP-EBID--along with the ease of use, low cost, and relative innocuousness of the liquid precursors--holds promise for its practical applicability in areas such as rapid device prototyping and lithographic mask repair. One of the feasibility benchmarks for the LP-EBID method is the ability to deposit high-fidelity nanostructures on various substrate materials. In this study, we report the first observations of performing LP-EBID on bare and metal-coated silicon-nitride membranes, and compare the resulting Pt deposits to those obtained by LP-EBID on polyimide membranes in terms of nucleation, morphology, size dependence on electron dose, and purity.

  9. Laser beam soldering of fine-pitch technology packages with solid solder deposits

    Science.gov (United States)

    Pucher, Hans-Joerg; Glasmacher, Mathias; Geiger, Manfred

    1996-04-01

    Micro electronics is a key technology attracting the attention of information, communication, automation and data processing technologies. Ongoing miniaturization combined with an increasing number of I/Os has inevitably lead to ever finer lead geometries. Therefore the demands put upon the surface mount technology are increasing continuously. Processing of high lead count fine pitch packages, for example those which are applied in high-capacity computers, has not increased the demands put upon the assembly process only, but also on the connecting techniques. By reflow soldering with laser beam radiation the benefits from the tool `laser beam' are used extensively, for example contact and force free processing, strictly localized heating and the good controllability thereof, formation of fine crystalline and homogeneous structures, etc. Within the scope of this paper the fundamentals of laser beam soldering are discussed for fine pitch lead frames (pitch 300 micrometers ) for plastic packages, made by a modified CuFe2P alloy with a 5 micrometers Sn90Pb plating, on solid solder depths (Sn63Pb) performed by the so called High-Pad process. These investigations are unique in the field of laser beam soldering and are carried out by means of a Nd:YAG-laser. A pyrometer is used for detection of the emission of the temperature radiation of the joining area for process control. The additional use of a high-speed camera gives a detailed description of the melting and wetting process. The influence of laser beam parameters and the volume of the solid solder deposits on the joining result are presented.

  10. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    Science.gov (United States)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  11. Potency of Full- Length MGF to Induce Maximal Activation of the IGF-I R Is Similar to Recombinant Human IGF-I at High Equimolar Concentrations.

    Directory of Open Access Journals (Sweden)

    Joseph A M J L Janssen

    Full Text Available To compare full-length mechano growth factor (full-length MGF with human recombinant insulin-like growth factor-I (IGF-I and human recombinant insulin (HI in their ability to activate the human IGF-I receptor (IGF-IR, the human insulin receptor (IR-A and the human insulin receptor-B (IR-B, respectively. In addition, we tested the stimulatory activity of human MGF and its stabilized analog Goldspink-MGF on the IGF-IR.The effects of full-length MGF, IGF-I, human mechano growth factor (MGF, Goldspink-MGF and HI were compared using kinase specific receptor activation (KIRA bioassays specific for IGF-I, IR-A or IR-B, respectively. These assays quantify activity by measuring auto-phosphorylation of the receptor upon ligand binding.IGF-IR: At high equimolar concentrations maximal IGF-IR stimulating effects generated by full-length MGF were similar to that of IGF-I (89-fold vs. 77-fold, respectively. However, EC50 values of IGF-I and full-length MGF for the IGF-I receptor were 0.86 nmol/L (95% CI 0.69-1.07 and 7.83 nmol/L (95% CI: 4.87-12.58, respectively. No IGF-IR activation was observed by human MGF and Goldspink-MGF, respectively. IR-A/IR-B: At high equimolar concentrations similar maximal IR-A stimulating effects were observed for full -length MGF and HI, but maximal IR-B stimulation achieved by full -length MGF was stronger than that by HI (292-fold vs. 98-fold. EC50 values of HI and full-length MGF for the IR-A were 1.13 nmol/L (95% CI 0.69-1.84 and 73.11 nmol/L (42.87-124.69, respectively; for IR-B these values were 1.28 nmol/L (95% CI 0.64-2.57 and 35.10 nmol/L (95% 17.52-70.33, respectively.Full-length MGF directly stimulates the IGF-IR. Despite a higher EC50 concentration, at high equimolar concentrations full-length MGF showed a similar maximal potency to activate the IGF-IR as compared to IGF-I. Further research is needed to understand the actions of full-length MGF in vivo and to define the physiological relevance of our in vitro findings.

  12. Potency of Full- Length MGF to Induce Maximal Activation of the IGF-I R Is Similar to Recombinant Human IGF-I at High Equimolar Concentrations

    OpenAIRE

    Janssen, Joseph A. M. J. L.; Hofland, Leo J.; Strasburger, Christian J.; Elisabeth S R van den Dungen; Mario Thevis

    2016-01-01

    textabstractAims To compare full-length mechano growth factor (full-length MGF) with human recombinant insulin-like growth factor-I (IGF-I) and human recombinant insulin (HI) in their ability to activate the human IGF-I receptor (IGF-IR), the human insulin receptor (IR-A) and the human insulin receptor-B (IR-B), respectively. In addition, we tested the stimulatory activity of human MGF and its stabilized analog Goldspink-MGF on the IGF-IR. Methods The effects of full-length MGF, IGF-I, human ...

  13. Potency of Full- Length MGF to Induce Maximal Activation of the IGF-I R Is Similar to Recombinant Human IGF-I at High Equimolar Concentrations

    Science.gov (United States)

    Janssen, Joseph A. M. J. L.; Hofland, Leo J.; Strasburger, Christian J.; van den Dungen, Elisabeth S. R.; Thevis, Mario

    2016-01-01

    Aims To compare full-length mechano growth factor (full-length MGF) with human recombinant insulin-like growth factor-I (IGF-I) and human recombinant insulin (HI) in their ability to activate the human IGF-I receptor (IGF-IR), the human insulin receptor (IR-A) and the human insulin receptor-B (IR-B), respectively. In addition, we tested the stimulatory activity of human MGF and its stabilized analog Goldspink-MGF on the IGF-IR. Methods The effects of full-length MGF, IGF-I, human mechano growth factor (MGF), Goldspink-MGF and HI were compared using kinase specific receptor activation (KIRA) bioassays specific for IGF-I, IR-A or IR-B, respectively. These assays quantify activity by measuring auto-phosphorylation of the receptor upon ligand binding. Results IGF-IR: At high equimolar concentrations maximal IGF-IR stimulating effects generated by full-length MGF were similar to that of IGF-I (89-fold vs. 77-fold, respectively). However, EC50 values of IGF-I and full-length MGF for the IGF-I receptor were 0.86 nmol/L (95% CI 0.69–1.07) and 7.83 nmol/L (95% CI: 4.87–12.58), respectively. No IGF-IR activation was observed by human MGF and Goldspink-MGF, respectively. IR-A/IR-B: At high equimolar concentrations similar maximal IR-A stimulating effects were observed for full -length MGF and HI, but maximal IR-B stimulation achieved by full -length MGF was stronger than that by HI (292-fold vs. 98-fold). EC50 values of HI and full-length MGF for the IR-A were 1.13 nmol/L (95% CI 0.69–1.84) and 73.11 nmol/L (42.87–124.69), respectively; for IR-B these values were 1.28 nmol/L (95% CI 0.64–2.57) and 35.10 nmol/L (95% 17.52–70.33), respectively. Conclusions Full-length MGF directly stimulates the IGF-IR. Despite a higher EC50 concentration, at high equimolar concentrations full-length MGF showed a similar maximal potency to activate the IGF-IR as compared to IGF-I. Further research is needed to understand the actions of full-length MGF in vivo and to define the

  14. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    Science.gov (United States)

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  15. Ion-beam analysis of CuInSe2 solar cells deposited on polyimide foil.

    Science.gov (United States)

    Spemann, D; Lorenz, M; Butz, T; Otte, K

    2004-06-01

    CuInSe(2) (CIS) solar cells deposited on polyimide foil by the Solarion company in a web-coater-based process using sputter and evaporation techniques were investigated in the ion beam laboratory LIPSION of the University of Leipzig by means of Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) using high-energy broad ion beams and microbeams. From these measurements the composition of the absorber and the lateral homogeneity and film thicknesses of the individual layers could be determined on the basis of some reasonable assumptions. For the first time, quantitative depth profiling of the individual elements was performed by microPIXE measurements on a beveled section prepared by ion-beam etching of a CIS solar cell. Within the CIS absorber layer no significant concentration-depth gradients were found for Cu, In, and Se, in contrast with results from secondary neutral mass spectrometry (SNMS) depth profiling, which was applied to the same samples for comparison. Furthermore, both PIXE and SNMS showed the presence of a remarkable amount of Cd from the CdS buffer layer in the underlying absorber. PMID:15179537

  16. Energy deposition measurements of a large-diameter, intense relativistic electron beam for high-power gas laser excitation

    International Nuclear Information System (INIS)

    Measurements of electron-beam (e-beam) energy deposition in gaseous medium by a segmented totally stopping calorimeter and a pressure jump method are described, both of which gave the same values. Typical e-beam parameters are 2 MV, 80 kA, and 65 ns (FWHM). The e-beam cross-sectional area is 10 cm in diameter. First, the radial distribution of the e-beam current generated from the field-emission diode as a function of the axial magnetic field was measured. Next, for applications to longitudinal excitation of the high-power gas lasers, the e-beam energy deposition characteristics are measured in N2 for the propagation distance up to 2.3 m in terms of the axial magnetic field, the N2 gas pressure, and the radial e-beam distribution. As a result, the axial field equivalent to the self-magnetic field of the electron beam can acceptably control the e-beam generation and propagation uniformities

  17. Influence of deposition rate on the properties of ZrO2 thin films prepared in electron beam evaporation method

    Institute of Scientific and Technical Information of China (English)

    Dongping Zhang(张东平); Meiqiong Zhan(占美琼); Ming Fang(方明); Hongbo He(贺洪波); Jianda Shao(邵建达); Zhengxiu Fan(范正修)

    2004-01-01

    ZrO2 thin films were prepared in electron beam thermal evaporation method. And the deposition rate changed from 1.3 to 6.3 nm/s in our study. X-ray diffractometer and spectrophotometer were employed to characterize the films. X-ray diffraction (XRD) spectra pattern shows that films structure changed from amorphous to polycrystalline with deposition rate increasing. The results indicate that internal stresses of the films are compressive in most case. Thin films deposited in our study are inhomogeneous, and the inhomogeneity is enhanced with the deposition rate increasing.

  18. Stability of a current carrying single nanowire of tungsten (W) deposited by focused ion beam

    Science.gov (United States)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    2016-02-01

    We report an investigation on the stability of single W nanowire (NW) under direct current stressing. The NW of width ≈ 80 nm and thickness ≈ 100 nm was deposited on a SiO2/Si substrate by Focused Ion Beam (FIB) of Ga ions using W(CO)6 as a precursor. Such nanowires, used as interconnects in nanoelectronics, contain C and Ga in addition to W. The stability studies, done for the first time in such FIB deposited NWs, show that under current stressing these NWs behave very differently from that observed in conventional metal NWs or interconnects. The failure of such FIB deposited NW occurs at a relatively low current density (˜1011 A/m2) which is an order or more less than that seen in conventional metal NWs. The failure accompanies with formation of voids and hillocks, suggesting ionic migration as the cause of failure. However, the polarities of void and hillock formations are opposite to those observed in conventional metal interconnects. This observation along with preferential agglomeration of Ga ions in hillocks suggests that the ionic migration in such NWs is dominated by direct force as opposed to the migration driven by electron wind force in conventional metal interconnects.

  19. Material properties of ion beam deposited oxides for the optoelectronic industry

    International Nuclear Information System (INIS)

    High quality, dense films of SiO2, Al2O3, Ta2O5, and TiO2 were deposited with an ion beam deposition system (IBD). IBD has significant advantages over other techniques in terms of directionality, stress control, repeatability, thermal stability, and film uniformity [J. J. Cuomo, J. M. E. Harper, C. R. Guarnieri, D. S. Yee, L. J. Atanasio, J. Angilello, C. T. Wu, and R. H. Hammond, J. Vac. Sci. Technol. 20, 349 (1982)]. To decrease the surface damage induced by ion bombardment, a multi-energy process was developed. This is especially important for laser facet coatings. The oxide films were optimized for the desired refractive index and zero absorption. Stress values of -0.2 to -0.5 GPa (compressive) and extremely good uniformity (2, all films remained in compressive stress after annealing. TiO2 turned tensile. With the variety of oxide materials developed, designing an anti-reflective or highly reflective stack, which satisfies requirements of stress, uniformity, deposition rate, and reflectance, becomes a matter of choosing the appropriate material set

  20. Progress on channel spark development and application of pulsed electron beam deposition (PED) in the field of medical coating work

    International Nuclear Information System (INIS)

    A promising source for Pulsed Electron Beam Deposition (PED) is the channel spark. Recent improvements helped to reduce beam instabilities which up to now have limited the life time of the system. The beam power could be increased and because of better beam quality the transport length of the beam is increased from 1 to several centimeters (up to 10 cm). Together with other improvements on the triggering system and beam transport in dielectric tubes, the channel spark approaches industrial standards. An overview of actual applications in research and industry will be presented. An attractive feature of the pulsed electron beam thin film deposition is the conservation of stoichiometry even during deposition of multi-component earth-alkali and alkali glasses. Specially developed glasses like BIOGLAS registered have the ability to anchor soft living tissue at the surface. In form of a bulk material bio active glasses are brittle limiting its applications. Contrary to brittle bulk material a thin layers on medical implants exhibits reliable bio-functionality. Coating of implants with this category of materials is subject of the European INCOMED project (Innovative Coating of Medical Implants with Soft Tissue Anchoring Ability) which just has started

  1. Electronic structure and nature of the color centers in MgF2

    Energy Technology Data Exchange (ETDEWEB)

    Freidman, S.P.; Golota, A.F.; Galakhov, V.R.; Gubanov, V.A.; Kurmaev, E.Z.; Khodos, M.Ya.; Cherkashenko, V.M.; Nemnonov, S.S.

    1986-09-01

    The electronic structure and spectroscopic properties of samples of magnesium fluoride with different numbers of defects have been investigated with the use of the methods of x-ray photoelectron, x-ray emission, ESR, and optical spectroscopy. Nonempirical self-consistent calculations of the electronic structure of clusters which simulate stoichiometric and defective MgF2 have been carried out. The color centers in the approx. 5-eV energy range are attributed to the presence of vacancies in the anionic sublattice.

  2. Results of the studies on energy deposition in IR6 superconducting magnets from continuous beam loss on the TCDQ system

    CERN Document Server

    Bracco, C; Presland, A; Redaelli, S; Sarchiapone, L; Weiler, T

    2007-01-01

    A single sided mobile graphite diluter block TCDQ, in combination with a two-sided secondary collimator TCS and an iron shield TCDQM, will be installed in front of the superconducting quadrupole Q4 magnets in IR6, in order to protect it and other downstream LHC machine elements from destruction in the event of a beam dump that is not synchronised with the abort gap. The TCDQ will be positioned close to the beam, and will intercept the particles from the secondary halo during low beam lifetime. Previous studies (1-4) have shown that the energy deposited in the Q4 magnet coils can be close to or above the quench limit. In this note the results of the latest FLUKA energy deposition simulations for Beam 2 are described, including an upgrade possibility for the TCDQ system with an additional shielding device. The results are discussed in the context of the expected performance levels for the different phases of LHC operation.

  3. Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition

    OpenAIRE

    Chiatti, O.; Warburton, P. A.

    2010-01-01

    We have fabricated tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapour deposition. By using ion-beam doses below 50 pC/μm² on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The low-temperature electron transport properties were investigated by measuring current-voltage characteristics for temperatures down to 400 mK and in magnetic fields up to 8 T. FIB-deposited tungsten films are known to have an enhanced transition tem­p...

  4. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    Directory of Open Access Journals (Sweden)

    Rachel M. Thorman

    2015-09-01

    Full Text Available Focused electron beam induced deposition (FEBID is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (3, Pt(PF34, Co(CO3NO, and W(CO6. Through these case studies, it is evident that this combination of studies can provide valuable insight into potential mechanisms governing deposit formation in FEBID. Although further experiments and new approaches are needed, these studies are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimized FEBID precursors.

  5. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    Energy Technology Data Exchange (ETDEWEB)

    Kreiskott, Sascha; Arendt, Paul N; Bronisz, Lawrence E; Foltyn, Steve R; Matias, Vladimir [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2003-05-01

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire.

  6. Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO

    International Nuclear Information System (INIS)

    We demonstrate the applicability of continuous electropolishing for the preparation of metal tapes for ion-beam assisted deposition of MgO for the fabrication of in-plane textured template layers. These templates are used for the fabrication of second generation high temperature superconducting wires utilizing YBa2Cu3O7-δ coatings on metallic substrates. Surface roughness values below 1 nm and local slopes of less than 1 deg. could be achieved with the electropolishing process. Mean surface roughness values are lower with the use of electropolishing and slopes of surface roughness inclines are significantly reduced compared to the best results of mechanical polishing (3.5 nm and 5 deg., respectively). The cost-effective process of electropolishing shows great promise for the fabrication of second generation high temperature superconducting wire

  7. Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic.

    Science.gov (United States)

    Sharma, N; van Mourik, R A; Yin, Y; Koopmans, B; Parkin, S S P

    2016-04-22

    Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle. PMID:26941232

  8. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuhan, E-mail: yw9ep@virginia.edu; Kittiwatanakul, Salinporn; Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Comes, Ryan B. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Wolf, Stuart A. [Department of Materials Science and Engineering and Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  9. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  10. High-Q MgF$_2$ whispering gallery mode resonators for refractometric sensing in aqueous environment

    CERN Document Server

    Sedlmeir, Florian; Leuchs, Gerd; Schwefel, Harald G L

    2014-01-01

    We present our experiments on refractometric sensing with ultrahigh-Q, crystalline, birefringent magnesium fluoride (MgF$_2$) whispering gallery mode resonators. The difference to fused silica which is most commonly used for sensing experiments is the small refractive index of MgF$_2$ which is very close to that of water. Compared to fused silica this leads to more than 50% longer evanescent fields and a 4.25 times larger sensitivity. Moreover the birefringence amplifies the sensitivity difference between TM and TE type modes which will enhance sensing experiments based on difference frequency measurements. We estimate the performance of our resonators and compare them with fused silica theoretically and present experimental data showing the interferometrically measured evanescent decay and the sensitivity of mm-sized MgF$_2$ whispering gallery mode resonators immersed in water. They show reasonable agreement with the developed theory. Furthermore, we observe stable Q factors in water well above $1 \\times 10^...

  11. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature

    Science.gov (United States)

    Mansilla, C.; Mehendale, S.; Mulders, J. J. L.; Trompenaars, P. H. F.

    2016-10-01

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, ‘in situ’ purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for ‘in situ’ Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied.

  12. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100)

    Science.gov (United States)

    Schirmer, M.; Walz, M.-M.; Vollnhals, F.; Lukasczyk, T.; Sandmann, A.; Chen, C.; Steinrück, H.-P.; Marbach, H.

    2011-02-01

    We have investigated the lithographic generation of TiOx nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  13. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Schirmer, M; Walz, M-M; Vollnhals, F; Lukasczyk, T; Sandmann, A; Steinrueck, H-P; Marbach, H [Lehrstuhl fuer Physikalische Chemie II and Interdisciplinary Center for Molecular Materials (ICMM), Universitaet Erlangen-Nuernberg, Egerlandstrasse 3, D-91058 Erlangen (Germany); Chen, C, E-mail: marbach@chemie.uni-erlangen.de [Department of Chemistry, Stanford University, Stanford, CA 94305 (United States)

    2011-02-25

    We have investigated the lithographic generation of TiO{sub x} nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  14. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    Science.gov (United States)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  15. Mechanism of spallation in platinum aluminide/electron beam physical vapor-deposited thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Gell, M.; Vaidyanathan, K.; Barber, B.; Cheng, J.; Jordan, E. [Univ. of Connecticut, Storrs, CT (United States)

    1999-02-01

    The spallation failure of a commercial thermal barrier coating (TBC), consisting of a single-crystal RENE N5 superalloy, a platinum aluminide (Pt-Al) bond coat, and an electron beam-deposited 7 wt pct yttria-stabilized zirconia ceramic layer (7YSZ), was studied following cyclic furnace testing. In the uncycled state and prior to deposition of the ceramic, the Pt-Al bond-coat surface contains a cellular network of ridges corresponding to the underlying bond-coat grain-boundary structure. With thermal cycling, the ridges and associated grain boundaries are the sites of preferential oxidation and cracking, which results in the formation of cavities that are partially filled with oxide. Using a fluorescent penetrant dye in conjunction with a direct-pull test, it is shown that, when specimens are cycled to about 80 pct of life, these grain-boundary regions show extensive debonding. The roles of oxidation and cyclic stress in localized grain boundary region spallation are discussed. The additional factors leading to large-scale TBC spallation are described.

  16. Computational study of transport and energy deposition of intense laser-accelerated proton beams in solid density matter

    Science.gov (United States)

    Kim, J.; McGuffey, C.; Qiao, B.; Beg, F. N.; Wei, M. S.; Grabowski, P. E.

    2015-11-01

    With intense proton beams accelerated by high power short pulse lasers, solid targets are isochorically heated to become partially-ionized warm or hot dense matter. In this regime, the thermodynamic state of the matter significantly changes, varying the proton stopping power where both bound and free electrons contribute. Additionally, collective beam-matter interaction becomes important to the beam transport. We present self-consistent hybrid particle-in-cell (PIC) simulation results of proton beam transport and energy deposition in solid-density matter, where the individual proton stopping and the collective effects are taken into account simultaneously with updates of stopping power in the varying target conditions and kinetic motions of the beam in the driven fields. Broadening of propagation range and self-focusing of the beam led to unexpected target heating by the intense proton beams, with dependence on the beam profiles and target conditions. The behavior is specifically studied for the case of an experimentally measured proton beam from the 1.25 kJ, 10 ps OMEGA EP laser transporting through metal foils. This work was supported by the U.S. DOE under Contracts No. DE-NA0002034 and No. DE-AC52-07NA27344 and by the U.S. AFOSR under Contract FA9550-14-1-0346.

  17. Chemical composition, morphology and optical properties of zinc sulfide coatings deposited by low-energy electron beam evaporation

    International Nuclear Information System (INIS)

    The research determines the features of formation, morphology, chemical composition and optical properties of the coatings deposited by the method, proposed for the first time, of the exposure of mechanical mixture of zinc and sulfur powders to low-energy electron beam evaporation. The findings show that the deposited coatings are characterized by high chemical and structural homogeneity in thickness. The study considers the influence of substrate temperature and thickness of the deposited layer on the morphology and the width of the formed ZnS thin layers band gap. Also was shown the possibility to form ZnS coatings with this method using the mixture of zinc and copper sulfide powders.

  18. Chemical composition, morphology and optical properties of zinc sulfide coatings deposited by low-energy electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Ragachev, A.V. [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Yarmolenko, M.A., E-mail: simmak79@mail.ru [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Rogachev, A.A. [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Gorbachev, D.L. [Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019 (Belarus); Zhou, Bing [International Chinese-Belorussian scientific laboratory on vacuum-plasma technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2014-06-01

    The research determines the features of formation, morphology, chemical composition and optical properties of the coatings deposited by the method, proposed for the first time, of the exposure of mechanical mixture of zinc and sulfur powders to low-energy electron beam evaporation. The findings show that the deposited coatings are characterized by high chemical and structural homogeneity in thickness. The study considers the influence of substrate temperature and thickness of the deposited layer on the morphology and the width of the formed ZnS thin layers band gap. Also was shown the possibility to form ZnS coatings with this method using the mixture of zinc and copper sulfide powders.

  19. Mechanisms of spallation of electron beam physical vapor deposited thermal barrier coatings with and without platinum aluminide bond coat ridges

    Energy Technology Data Exchange (ETDEWEB)

    Vaidyanathan, K.; Gell, M. [Connecticut Univ., Storrs, CT (United States). Dept. of Metallurgy; Jordan, E. [Dept. Mechanical Engineering, University of Connecticut, CT-06269, Storrs (United States)

    2000-11-01

    Grain boundary ridges, that form on the surface of platinum aluminide [(Ni,Pt)Al] bond coats prior to the deposition of the yttria stabilized zirconia ceramic layer by the electron beam physical vapor deposition (EB-PVD) process, were shown to be the sites for spallation damage initiation in (Ni,Pt)Al/EB-PVD thermal barrier coatings. When these ridges are removed prior to deposition of the ceramic layer, a 3 x life improvement is achieved. This study compares the spallation mechanisms in specimens with and without bond coat ridges, in order to explain the improvement in spallation life. (orig.)

  20. Structural and growth aspects of electron beam physical vapor deposited NiO-CeO2 nanocomposite films

    International Nuclear Information System (INIS)

    Deposition of composite materials as thin film by electron beam physical vapor deposition technique (EB-PVD) still remains as a challenge. Here, the authors report the deposition of NiO-CeO2 (30/70 wt. %) composites on quartz substrate by EB-PVD. Two NiO-CeO2 nanocomposite targets—one as green compact and the other after sintering at 1250 °C—were used for the deposition. Though the targets varied with respect to physical properties such as crystallite size (11–45 nm) and relative density (44% and 96%), the resultant thin films exhibited a mean crystallite size in the range of 20–25 nm underlining the role of physical nature of deposition. In spite of the crystalline nature of the targets and similar elemental concentration, a transformation from amorphous to crystalline structure was observed in thin films on using sintered target. Postannealing of the as deposited film at 800 °C resulted in a polycrystalline structure consisting of CeO2 and NiO. Deposition using pure CeO2 or NiO as target resulted in the preferential orientation toward (111) and (200) planes, respectively, showing the influence of adatoms on the evaporation and growth process of NiO-CeO2 composite. The results demonstrate the influence of electron beam gun power on the adatom energy for the growth process of composite oxide thin films

  1. Improved Performance of Organic Light-Emitting Diodes with MgF2 as the Anode Buffer Layer

    Institute of Scientific and Technical Information of China (English)

    XIE Jing; ZHANG De-Qiang; WANG Li-Duo; DUAN Lian; QIAO Juan; QIU Yong

    2006-01-01

    @@ Organic light-emitting diodes (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) and tris (8-hydroxyquinoline) aluminium (Alq3) are improved by using a thin MgF2 buffer layer sandwiched between the indium tin oxide (ITO) anode and hole transporting layer (HTL) of NPB.

  2. High-purity 3D nano-objects grown by focused-electron-beam induced deposition.

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices. PMID:27454835

  3. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ˜50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  4. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core–shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  5. MGF Approach to the Analysis of Generalized Two-Ray Fading Models

    KAUST Repository

    Rao, Milind

    2015-01-01

    We analyze a class of Generalized Two-Ray (GTR) fading channels that consist of two line of sight (LOS) components with random phase plus a diffuse component. We derive a closedform expression for the moment generating function (MGF) of the signal-to-noise ratio (SNR) for this model, which greatly simplifies its analysis. This expression arises from the observation that the GTR fading model can be expressed in terms of a conditional underlying Rician distribution. We illustrate the approach to derive simple expressions for statistics and performance metrics of interest such as the amount of fading, the level crossing rate, the symbol error rate, and the ergodic capacity in GTR fading channels. We also show that the effect of considering a more general distribution for the phase difference between the LOS components has an impact on the average SNR.

  6. Tribological coatings for complex mechanical elements produced by supersonic cluster beam deposition of metal dichalcogenide nanoparticles

    Science.gov (United States)

    Piazzoni, C.; Buttery, M.; Hampson, M. R.; Roberts, E. W.; Ducati, C.; Lenardi, C.; Cavaliere, F.; Piseri, P.; Milani, P.

    2015-07-01

    Fullerene-like MoS2 and WS2 nanoparticles can be used as building blocks for the fabrication of fluid and solid lubricants. Metal dichalcogenide films have a very low friction coefficient in vacuum, therefore they have mostly been used as solid lubricants in space and vacuum applications. Unfortunately, their use is significantly hampered by the fact that in the presence of humidity, oxygen and moisture, the low-friction properties of these materials rapidly degrade due to oxidation. The use of closed-cage MoS2 and WS2 nanoparticles may eliminate this problem, although the fabrication of lubricant thin films starting from dichalcogenide nanoparticles is, to date, a difficult task. Here we demonstrate the use of supersonic cluster beam deposition for the coating of complex mechanical elements (angular contact ball bearings) with nanostructured MoS2 and WS2 thin films. We report structural and tribological characterization of the coatings in view of the optimization of tribological performances for aerospace applications.

  7. Visible light active TiO2 films prepared by electron beam deposition of noble metals

    International Nuclear Information System (INIS)

    TiO2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO2 films by this method is affected by the concentration of impregnating solution.

  8. Visible light active TiO 2 films prepared by electron beam deposition of noble metals

    Science.gov (United States)

    Hou, Xing-Gang; Ma, Jun; Liu, An-Dong; Li, De-Jun; Huang, Mei-Dong; Deng, Xiang-Yun

    2010-03-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  9. Focused-electron-beam-induced deposition of freestanding three-dimensional nanostructures of pure coalesced copper crystals

    International Nuclear Information System (INIS)

    We report on direct writing of three-dimensional freestanding nanostructures of Cu by use of a focused electron beam (FEB) and the metalorganic precursor hfac-Cu-TMVS. Freestanding horizontal rods were deposited over about 10 μm length and consist of small 2-5 nm Cu nanocrystals dispersed in an amorphous matrix containing carbon, fluorine, silicon, and oxygen. The freestanding horizontal rods were used as support for further vertical deposits resulting in tips of coalesced facetted Cu nanocrystals of up to 100 nm in size. The almost constant deposition rate of 5-6 nm/s is in contrast to vertical tips on bulk supports, which show a deposition rate decreasing from 23 to 10 nm/s. The above results suggest a thermal decomposition process induced by electron energy absorption

  10. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  11. Reel-to-reel preparation of ion-beam assisted deposition (IBAD)-MgO based coated conductors

    International Nuclear Information System (INIS)

    We report on our efforts in developing and scaling-up the systems for IBAD-MgO based coated conductor fabrication. The overall fabrication process involves a number of different processes including: electropolishing of the substrates; barrier-layer, seed-layer, and IBAD-MgO deposition by e-beam evaporation; and pulsed laser deposition of buffer and YBCO layers. All processes are realized in reel-to-reel processing systems. Latest results have shown that the IBAD-MgO approach yields coated conductor performance comparable to the best results achieved elsewhere to date

  12. Reel-to-reel preparation of ion-beam assisted deposition (IBAD)-MgO based coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Kreiskott, Sascha; Arendt, Paul N; Coulter, J Yates; Dowden, Paul C; Foltyn, Stephen R; Gibbons, Brady J; Matias, Vladimir; Sheehan, Chris J [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2004-05-01

    We report on our efforts in developing and scaling-up the systems for IBAD-MgO based coated conductor fabrication. The overall fabrication process involves a number of different processes including: electropolishing of the substrates; barrier-layer, seed-layer, and IBAD-MgO deposition by e-beam evaporation; and pulsed laser deposition of buffer and YBCO layers. All processes are realized in reel-to-reel processing systems. Latest results have shown that the IBAD-MgO approach yields coated conductor performance comparable to the best results achieved elsewhere to date.

  13. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Matthias [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Technische Universitaet Dresden, D-01062 Dresden (Germany); Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Oates, Thomas W. H. [Leibniz-Institut fuer Analytische Wissenschaft, ISAS e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Luis Endrino, Jose [Surfaces and Coatings Department, Instituto de Ciencia de Materiales de Madrid, c/Sor Juana Ines de la Cruz 3, Cantoblanco, 28049 Madrid (Spain); Baehtz, Carsten; Shalimov, Artem [Helmholtz-Zentrum Dresden-Rossendorf, PF-510119, 01314 Dresden (Germany); Rossendorf Beamline, European Synchrotron Radiation Facility, F-38043 Grenoble (France)

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  14. The Post—deposition Anneal Effects on the Electrical Properties of HfO2 Gate Dielectric Deposited by Ion Beam Sputtering at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    KANGJinfeng; LIUXiaoyan; TIANDayu; WANGWei; LIANGuijun; XIONGGuangcheng; HANRuqi

    2003-01-01

    HfO2 high K gate dielectric films were fab-ricated on p-Si(100) substrates by ion beam sputtering at room temperature followed by a post-deposition anneal-ing (PDA). The PDA effects on the electrical properties of HfO2 gate dielectric films were studied. High quality HfO2 gate dielectric with small equivalent oxide thickness (EOT = 2.3nm), small hystereis (△VFB<50mV), and lowleakage current (< 1× 10-4A/cm2@lV) was fabricated.The studies of PDA effects on the electrical properties in-dicate that the PDA process in nitrogen ambient will be necessary for the HfO2 gate dielectric films deposited by ion beam sputtering the sintered target at room temper-ature in order to obtain small equivalent oxide thickness and low leakage currents, whereas a PDA in oxygen ambi-ent will be not required. The results also means that there is less oxygen vacancy defect produced in the HfO2 gate dielectric films during the deposition at room temperature.

  15. Structural, compositional, mechanical characterization and biological assessment of bovine-derived hydroxyapatite coatings reinforced with MgF2 or MgO for implants functionalization.

    Science.gov (United States)

    Mihailescu, Natalia; Stan, G E; Duta, L; Chifiriuc, Mariana Carmen; Bleotu, Coralia; Sopronyi, M; Luculescu, C; Oktar, F N; Mihailescu, I N

    2016-02-01

    Hydroxyapatite (HA) is a consecrated biomaterial for bone reconstruction. In the form of thin films deposited by pulsed laser technologies, it can be used to cover metallic implants aiming to increase biocompatibility and osseointegration rate. HA of animal origin (bovine, BHA) reinforced with MgF2 (2wt.%) or MgO (5wt.%) were used for deposition of thin coatings with improved adherence, biocompatibility and antimicrobial activity. For pulsed laser deposition experiments, a KrF* (λ=248nm, τFWHM≤25ns) excimer laser source was used. The deposited structures were characterized from a physical-chemical point of view by X-Ray Diffraction, Fourier Transform Infra-Red Spectroscopy, Scanning Electron Microscopy in top- and cross-view modes, Energy Dispersive X-Ray Spectroscopy and Pull-out adherence tests. The microbiological assay using the HEp-2 cell line revealed that all target materials and deposited thin films are non-cytotoxic. We conducted tests on three strains isolated from patients with dental implants failure, i.e. Microccocus sp., Enterobacter sp. and Candida albicans sp. The most significant anti-biofilm effect against Microcococcus sp. strain, at 72h, was obtained in the presence of BHA:MgO thin films. For Enterobacter sp. strain a superior antimicrobial activity at 72h was noticed, in respect with simple BHA or Ti control. The enhanced antimicrobial performances, correlated with good cytocompatibility and mechanical properties recommend these biomaterials as an alternative to synthetic HA for the fabrication of reliable implant coatings for dentistry and other applications. PMID:26652442

  16. Structural and growth aspects of electron beam physical vapor deposited NiO-CeO{sub 2} nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Kuanr, Sushil Kumar; K, Suresh Babu, E-mail: sureshbabu.nst@pondiuni.edu.in [Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University, Puducherry 605 014 (India)

    2016-03-15

    Deposition of composite materials as thin film by electron beam physical vapor deposition technique (EB-PVD) still remains as a challenge. Here, the authors report the deposition of NiO-CeO{sub 2} (30/70 wt. %) composites on quartz substrate by EB-PVD. Two NiO-CeO{sub 2} nanocomposite targets—one as green compact and the other after sintering at 1250 °C—were used for the deposition. Though the targets varied with respect to physical properties such as crystallite size (11–45 nm) and relative density (44% and 96%), the resultant thin films exhibited a mean crystallite size in the range of 20–25 nm underlining the role of physical nature of deposition. In spite of the crystalline nature of the targets and similar elemental concentration, a transformation from amorphous to crystalline structure was observed in thin films on using sintered target. Postannealing of the as deposited film at 800 °C resulted in a polycrystalline structure consisting of CeO{sub 2} and NiO. Deposition using pure CeO{sub 2} or NiO as target resulted in the preferential orientation toward (111) and (200) planes, respectively, showing the influence of adatoms on the evaporation and growth process of NiO-CeO{sub 2} composite. The results demonstrate the influence of electron beam gun power on the adatom energy for the growth process of composite oxide thin films.

  17. Crystalline garnet Bragg reflectors for high power, high temperature, and integrated applications fabricated by multi-beam pulsed laser deposition

    OpenAIRE

    Sloyan, Katherine A.; May-Smith, Timothy C.; Zervas, Michalis N.; Eason, Robert W.

    2012-01-01

    Crystalline Bragg reflectors are of interest for high power, high temperature and integrated applications. We demonstrate the automated growth of such structures by shuttered multi-beam Pulsed Laser Deposition (PLD). Geometries include 145 layer stacks exhibiting >99.5% reflection and ? phase-shifted designs. A crystalline grating strength-apodized sample was grown by mixing plumes to obtain layers with custom refractive indices. Peak reflection wavelength was tuneable with incident position,...

  18. Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Liu, Heng; Yin, Zhigang; Meng, Junhua; Xia, Jing; Meng, Xiang-Min; Wu, Jinliang; You, Jingbi

    2015-12-22

    Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

  19. Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy

    OpenAIRE

    McCamy, James W.; Shin, Byungha; Leonard, John P.; Aziz, Michael

    2005-01-01

    Using a dual Molecular Beam Epitaxy (MBE)-Pulsed Laser Deposition (PLD) Ultra-High Vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along direc...

  20. MGF-Ct24E改性聚乳酸的合成、表征及其对成骨细胞增殖的评价%Synthesis, characterization and osteoblasts proliferation of a novel biomimetic material based on MGF-Ct24E modified poly (D, L-lactic acid)

    Institute of Scientific and Technical Information of China (English)

    罗嘉; 李玉筱; 王品品; 王远亮

    2013-01-01

    力生长因子(MGF)是骨修复重建的一种重要生长因子.以二环己基碳二亚胺为缩合剂,将MGF羧基端E结构域24肽(MGF-Ct24E)共价接枝到丁二胺改性的聚乳酸上(DPLA),制得了新型MGF-Ct24E改性聚乳酸仿生材料(MGF Ct24E-DPLA).采用氨基酸分析和高效液相色谱对MGF-Ct24E含量进行了定性定量表征,静态水接触角和吸水率测定了MGF-Ct24E DPLA材料的亲水性,MTT法评价了其对成骨细胞的增殖作用.结果表明,MGF-Ct24E成功引入到DPLA中,接枝效率为24.7%,并且和DPLA相比,MGF-Ct24E-DPLA材料具有更好的亲水性和促进成骨细胞增殖的能力.因此这种新型MGF-Ct24E改性聚乳酸仿生材料有望成为骨组织工程领域中一种卓越的生物材料.%Mechano-growth factor (MGF) is one of the most important growth factors of bone regeneration. A novel biomimetic poly (D, L-lactic acid) (PDLLA) modification was designed and synthesized based on MGF-Ct24E grafted butanediamine modified PDLLA (DPLA). MGF-Ct24Es were grafted into the side chain of DP-LA via a stable covalent amide bond by using dicyclohexylcarbodiimide (DCC) as the condensing agent to produce biomimetic DPLA materials (MGF-Ct24E-DPLA). Amino acid analyzer (AAA) and high performance liquid chromatography (HPLC) were used to characterize the MGF-Ct24E-DPLA. The hydrophilicity of MGF-Ct24E-DPLA was evaluated by means of the water-uptake ratios and static water contact angle. Data revealed that the grafting efficiency of MGF-Ct24E was about 24. 7%. MGF-Ct24E-MPLA had better hydrophilicity than DPLA. The osteoblasts behavior of proliferation, on glass, DPLA and MGF-Ct24E-DPLA films was investigated and the results indicated that the introduction of MGF-Ct24E could improve osteoblasts proliferation. The MGF-Ct24EMPLA with higher bioactivity may have potential application for bone tissue engineering.

  1. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    Science.gov (United States)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  2. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    Science.gov (United States)

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  3. Thickness and component distributions of yttrium-titanium alloy films in electron-beam physical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

  4. Thickness and component distributions of yttrium-titanium alloy films in electron-beam physical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    LI ShuaiHui; SHU YongHua; FAN Jing

    2008-01-01

    Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present wor0k employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

  5. The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD

    Directory of Open Access Journals (Sweden)

    Yaser M. Abdulraheem

    2013-01-01

    Full Text Available Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. The deposition was performed under vacuum ranging from 10−5 to 10−6 Torr without process gases, resulting in homogeneous TiO2-x layers with a thickness of around 100 nm. Samples were then annealed at high temperatures ranging from 500°C to 800°C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric TiO2-x film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above 700°C. The refractive index obtained through spectroscopic ellipsometry ranged between 2.09 and 2.37 in the wavelength range, 900 nm to 400 nm for the as-deposited sample, and jumped to the range between 2.23 and 2.65 for samples annealed at 800°C. The minimum surface reflectance changed from around 0.6% for the as-deposited samples to 2.5% for the samples annealed at 800°C.

  6. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes.

    Science.gov (United States)

    Tu, F; Drost, M; Vollnhals, F; Späth, A; Carrasco, E; Fink, R H; Marbach, H

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ∼160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties. PMID:27454990

  7. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes

    Science.gov (United States)

    Tu, F.; Drost, M.; Vollnhals, F.; Späth, A.; Carrasco, E.; Fink, R. H.; Marbach, H.

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ˜160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  8. Ion-beam assisted deposition of MgO with in situ RHEED monitoring to control Bi-axial texture

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, P. N. (Paul N.); Foltyn, S. R. (Stephen R.); Jia, Quanxi; DePaula, R. F. (Raymond Felix); Dowden, P. C. (Paul C.); Kung, H. (Harriett); Holesinger, T. G. (Terry G.); Stan, L. (Liliana); Emmert, L. A. (Luke A.); Peterson, E. J. (Eric J.); Groves, J. R. (James R.)

    2001-01-01

    We have studied the growth of magnesium oxide using ion-beam assisted deposition (IBAD) to achieve (100) oriented, bi-axially textured films with low mosaic spread, for film thicknesses of 10 nm on silicon substrates. We have refined the process by using reflected high-energy electron diffraction (RHEED) to monitor the growth of IBAD MgO films and found that the diffracted intensity can be used to determine (and ultimately control) final in-plane texture of the film. Here we present results on our work to develop the use of real-time RHEED monitoring to deposit well-oriented IBAD MgO films. The results have been corroborated with extensive grazing-incidence X-ray diffraction (GID). Results of these analyses have allowed us to deposit films on metallic substrates with in-plane mosaic spread less than 7{sup o}.

  9. Plasmonic Gold Helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits

    CERN Document Server

    Haverkamp, Caspar; Jäckle, Sara; Manzoni, Anna; Christiansen, Silke

    2016-01-01

    Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most no...

  10. High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

    Institute of Scientific and Technical Information of China (English)

    章宁琳; 万青; 宋志棠; 沈勤我; 祝向荣; 林成鲁

    2002-01-01

    Zirconium oxide films were deposited on p-type Si(l00) substrates using high vacuum electron beam evaporation (HVEBE) at room temperature. X-ray photoelectric spectroscopy shows that the dominant chemical state of zirconia thin films is in the fully oxidized state of Zr4+, no matter whether annealed in oxygen. The structural information from x-ray diffraction shows that zirconia thin films deposited at room temperature by HVEBEwere completely amorphous before and after the annealing. The spreading resistance profile indicates that ZrO2 thin films have excellent insulation property (with a resistance of more than 10s Ω) and the thickness is 800A.After thermal treatment at 600°C in O2 ambient, the root-mean-square roughness changed from 8.09 A of the as-deposited film to 13.8A across an area of i × 1μm2.

  11. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    Science.gov (United States)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  12. An MGF-based unified framework to determine the joint statistics of partial sums of ordered random variables

    KAUST Repository

    Nam, Sungsik

    2010-11-01

    Order statistics find applications in various areas of communications and signal processing. In this paper, we introduce an unified analytical framework to determine the joint statistics of partial sums of ordered random variables (RVs). With the proposed approach, we can systematically derive the joint statistics of any partial sums of ordered statistics, in terms of the moment generating function (MGF) and the probability density function (PDF). Our MGF-based approach applies not only when all the K ordered RVs are involved but also when only the Ks(Ks < K) best RVs are considered. In addition, we present the closed-form expressions for the exponential RV special case. These results apply to the performance analysis of various wireless communication systems over fading channels. © 2006 IEEE.

  13. Interaction, composition, and optical properties of the MgF2(MgO)-EuF3 system

    International Nuclear Information System (INIS)

    Processes of interaction between MgO and EuF3 are studied. Results of these processes are formation of magnesium fluorides and europium(III) oxyfluorides of variable composition. It is determined that there is considerable difference in spectra of diffusion reflection of fluoride and oxyfluoride phases of Eu(III). Effect of silicon and deep vacuum on systems containing oxide phase is studied. It is determined that in such system presence of Eu(II) compounds are observed. Fundamentally different character of thermogravimetric curves is detected in the MgF2-EuF3-Si and MgO-EuF3-Si systems. That permits to propose the method of MgO content estimation in MgF2

  14. Effects of deposition conditions on gas-barrier performance of SiOxNy thin films formed via ion-beam-assisted vapor deposition

    International Nuclear Information System (INIS)

    SiOxNy thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiOx was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiOx films were investigated by selecting appropriate sintering condition regimes of Si and SiO2 mixed powders. The SiOxNy thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm3/m2 day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N2 partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation

  15. ESR of dislocation defects in MgF2 crystals--with more than 130 line peaks

    Institute of Scientific and Technical Information of China (English)

    Hou Bi-Hui; Zheng Ying-Guang; Shao Meng; Liu Feng-Yan; Fan Zhi-Da

    2005-01-01

    In this work, more than 130 line peaks in electron spin resonance (ESR) spectra have been discovered of the laser material MgF2 crystal in room-temperature experiments. A sample is cut from the shoulder part of the MgF2 crystal,and another is from the MgF2:Co crystal. The samples were not treated by any irradiation. The same anisotropic ESR spectra of the two samples indicate that the dopant Co2+ introduces defects which induce the same multinuclear free radicals as in dislocations in the sample of MgF2. These paramagnetic solid multinuclear free radicals show good stability, and their ESR spectra are found to be anisotropic. ESR signals are derived from three different types of multinuclear free radicals from a tentative simulation analysis.When the direction of the applied magnetic field is along the [100] or [010] orientation of the crystal, the magnetic field at which the ESR signals are detected ranges from 0.2294T to 0.4654T and the width of this range is 0.2362T (corresponding to an energy band of 0.233eV); the most narrow peak in the ESR spectra has a width △H about 1.28 × 10-3T.This width △H, equivalent to the energy difference of two neighbouring levels, is very small, only 1.85× 10-7eV (or 1.46 × 10-3cm- 1 ).This fact indicates that the ground state is highly degenerate, and splits into nearly quasi-continuous energy levels like an energy band in an applied magnetic field. It may be served as a new starting point of solid laser exciter frequency modulation.

  16. ESR of dislocation defects in MgF2 crystals—with more than 130 line peaks

    Science.gov (United States)

    Hou, Bi-Hui; Zheng, Ying-Guang; Shao, Meng; Liu, Feng-Yan; Fan, Zhi-Da

    2005-07-01

    In this work, more than 130 line peaks in electron spin resonance (ESR) spectra have been discovered of the laser material MgF2 crystal in room-temperature experiments. A sample is cut from the shoulder part of the MgF2 crystal and another is from the MgF2:Co crystal. The samples were not treated by any irradiation. The same anisotropic ESR spectra of the two samples indicate that the dopant Co2+ introduces defects which induce the same multinuclear free radicals as in dislocations in the sample of MgF2. These paramagnetic solid multinuclear free radicals show good stability and their ESR spectra are found to be anisotropic. ESR signals are derived from three different types of multinuclear free radicals from a tentative simulation analysis. When the direction of the applied magnetic field is along the [100] or [010] orientation of the crystal, the magnetic field at which the ESR signals are detected ranges from 0.2294T to 0.4654T and the width of this range is 0.2362T (corresponding to an energy band of 0.233eV); the most narrow peak in the ESR spectra has a width ΔH about 1.28×10-3T. This width ΔH, equivalent to the energy difference of two neighbouring levels, is very small, only 1.85×10-7eV (or 1.46×10-3cm-1). This fact indicates that the ground state is highly degenerate and splits into nearly quasi-continuous energy levels like an energy band in an applied magnetic field. It may be served as a new starting point of solid laser exciter frequency modulation.

  17. Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

    Science.gov (United States)

    Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

    2016-07-01

    We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

  18. Distribution of Energy Deposited in Plastic Tubing and Copper-Wire Insulation by Electron Beam Irradiation

    DEFF Research Database (Denmark)

    Pedersen, Walther Batsberg; Miller, Arne; Pejtersen, K.;

    1978-01-01

    Scanned electron beam treatment is used to improve the physical properties of certain polymers, such as shrinkable plastic tubing and insulated wire and cable. Tubing or wires are passed at high speed under the beam scanner, and the material is irradiated to absorbed doses of several Mrad...

  19. Ion beam sputter deposition of Ag films: Influence of process parameters on electrical and optical properties, and average grain sizes

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de; Feder, R.; Gerlach, J.W.; Neumann, H.

    2014-01-31

    Ion beam sputter deposition is used to grow several sets of Ag films under systematic variation of ion beam parameters, such as ion species and ion energy, and geometrical parameters, such as ion incidence angle and polar emission angle. The films are characterized concerning their thickness by profilometry, their electrical properties by 4-point-probe-measurements, their optical properties by spectroscopic ellipsometry, and their average grain sizes by X-ray diffraction. Systematic influences of the growth parameters on film properties are revealed. The film thicknesses show a cosine-like angular distribution. The electrical resistivity increases for all sets with increasing emission angle and is found to be considerably smaller for Ag films grown by sputtering with Xe ions than for the Ag films grown by sputtering with Ar ions. Increasing the ion energy or the ion incidence angle also increases the electrical resistivity. The optical properties, which are the result of free charge carrier absorption, follow the same trends. The observed trends can be partly assigned to changes in the average grain size, which are tentatively attributed to different energetic and angular distributions of the sputtered and back-scattered particles. - Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Film characterization: thickness, electrical, optical and structural properties. • Electrical resistivity changes considerably with ion species and polar emission angle. • Electrical and optical data reveal a strong correlation with grain sizes. • Change of film properties related to changing properties of film-forming particles.

  20. Energy deposition of H and He ion beams in hydroxyapatite films: A study with implications for ion-beam cancer therapy

    Science.gov (United States)

    Limandri, Silvina; de Vera, Pablo; Fadanelli, Raul C.; Nagamine, Luiz C. C. M.; Mello, Alexandre; Garcia-Molina, Rafael; Behar, Moni; Abril, Isabel

    2014-02-01

    Ion-beam cancer therapy is a promising technique to treat deep-seated tumors; however, for an accurate treatment planning, the energy deposition by the ions must be well known both in soft and hard human tissues. Although the energy loss of ions in water and other organic and biological materials is fairly well known, scarce information is available for the hard tissues (i.e., bone), for which the current stopping power information relies on the application of simple additivity rules to atomic data. Especially, more knowledge is needed for the main constituent of human bone, calcium hydroxyapatite (HAp), which constitutes 58% of its mass composition. In this work the energy loss of H and He ion beams in HAp films has been obtained experimentally. The experiments have been performed using the Rutherford backscattering technique in an energy range of 450-2000 keV for H and 400-5000 keV for He ions. These measurements are used as a benchmark for theoretical calculations (stopping power and mean excitation energy) based on the dielectric formalism together with the MELF-GOS (Mermin energy loss function-generalized oscillator strength) method to describe the electronic excitation spectrum of HAp. The stopping power calculations are in good agreement with the experiments. Even though these experimental data are obtained for low projectile energies compared with the ones used in hadron therapy, they validate the mean excitation energy obtained theoretically, which is the fundamental quantity to accurately assess energy deposition and depth-dose curves of ion beams at clinically relevant high energies. The effect of the mean excitation energy choice on the depth-dose profile is discussed on the basis of detailed simulations. Finally, implications of the present work on the energy loss of charged particles in human cortical bone are remarked.

  1. Very high temperature chemical vapor deposition of new carbon thin films using organic semiconductor molecular beam sources

    Energy Technology Data Exchange (ETDEWEB)

    Noguchi, Takuya [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Shimada, Toshihiro, E-mail: shimada@chem.s.u-tokyo.ac.j [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Hanzawa, Akinori; Hasegawa, Tetsuya [Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan)

    2009-11-30

    We carried out the preparation and characterization of new carbon films deposited using an organic molecular beam deposition apparatus with very high substrate temperature (from room temperature to 2670 K), which we newly developed. When we irradiated molecular beam of organic semiconductor perylene tetracarboxylic acid dianhydride (PTCDA) on Y{sub 0.07}Zr{sub 0.93}O{sub 2} (111) at 2170 K, a new carbon material was formed via decomposition and fusing of the molecules. The films were characterized with an atomic force microscope (AFM), Raman spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Zirconium carbide (ZrC) films were identified beneath the topmost carbon layer by XRD and XPS analyses, which results from chemical reactions of the substrate and the molecules. Partially graphitized aromatic rings of PTCDA were observed from Raman spectroscopy. The present technique - very high temperature chemical vapor deposition using organic semiconductor sources - will be useful to study a vast unexplored field of covalent carbon solids.

  2. Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

    Energy Technology Data Exchange (ETDEWEB)

    Abedrabbo, S., E-mail: sxa0215@yahoo.com [Department of Physics, University of Jordan, Amman 11942 (Jordan); Mohammed, Q. [Tadawul Shares and Bonds Mediation L.L.C., Dubai (United Arab Emirates); Fiory, A.T. [Department of Physics, New Jersey Institute of Technology, Newark, NJ 07901 (United States)

    2009-02-01

    Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar{sup +} ions were implanted at 300 keV. Oxygen was incorporated by O{sup +}-ion implantation at 130 keV. Samples were annealed at 600 deg. C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er{sup 3+} transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.

  3. Artificial granularity in two-dimensional arrays of nanodots fabricated by focused-electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Porrati, F; Sachser, R; Huth, M [Physikalisches Institut, Goethe-Universitaet, Max-von-Laue-Strasse 1, D-60438 Frankfurt am Main (Germany); Strauss, M [Max-Planck-Institut fuer Biophysik, Max-von-Laue-Strasse 3, D-60438 Frankfurt am Main (Germany); Andrusenko, I; Gorelik, T; Kolb, U [Institut fuer Physikalische Chemie, Johannes Gutenberg-Universitaet Mainz, Welderweg 11, D-55099 Mainz (Germany); Bayarjargal, L; Winkler, B [Institut fuer Geowissenschaften, Abt. Kristallographie, Goethe-Universitaet, Altenhoeferallee 1, D-60438 Frankfurt am Main (Germany)

    2010-09-17

    We have prepared 2D arrays of nanodots embedded in an insulating matrix by means of focused-electron-beam-induced deposition using the W(CO){sub 6} precursor. By varying the deposition parameters, i.e. the electron beam current and energy and the raster constant, we obtain an artificial granular material with tunable electrical properties. The analysis of the temperature dependence of the conductivity and of the current-voltage characteristic suggests that the transport mechanism is governed by electron tunneling between artificial grains. In order to understand the nature of the granularity and thus the microstructural origin of the electronic transport behavior, we perform TEM and micro-Raman investigations. Independent of the deposition parameters, TEM measurements show that the dots are constituted of amorphous tungsten carbide clusters embedded in an amorphous carbonaceous matrix. Micro-Raman spectra show two peaks, around 690 and 860 cm{sup -1} associated with the W-C stretching modes. Higher frequency peaks give information on the composition of the matrix. In particular, we measure a peak at about 1290 cm{sup -1}, which is associated with sp{sup 3} carbon bonds. Furthermore we detect the so-called D and G peaks, at about 1350 and 1560 cm{sup -1}, associated with the vibration modes of the sp{sup 2} carbon bonds. The analysis of the position of the peaks and of their relative intensity suggests that the composition of the matrix is between nanocrystalline graphite and amorphous carbon.

  4. Variation of the metallic content of Focused Electron Beam Induced Deposition of Cobalt

    OpenAIRE

    Bernau, Laurent; Gabureac, Mihai; Utke, Ivo

    2010-01-01

    Cobalt-containing deposits from Cobalt carbonyl are experimentally produced and their composition is measured. The Cobalt concentration is found to be readily tunable between 20 and 70 at.% by variation of the dwell time. The variations in metallic concentration are explained by co-deposition of hydrocarbons present in the chamber background pressure.

  5. Double-beam pulsed laser deposition for the growth of Al-incorporated ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Sánchez-Aké, C., E-mail: citlali.sanchez@ccadet.unam.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Bizarro, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-186, C.P. 04510 México D.F., México (Mexico)

    2014-05-01

    Pulsed laser deposition in a delayed-double beam configuration is used to incorporate in situ Al in ZnO thin films. In this configuration, two synchronized pulsed-laser beams are employed to ablate independently a ZnO and an Al target. We investigated the effects of relative time delay of plasma plumes on the composition of the films with the aim of evaluating the performance of this technique to produce doped materials. Relative delay between plumes was found to control the incorporation of Al in the film in the range from 14% to 30%. However, to produce low impurity concentration of Al-doped ZnO (with Al incorporation less than 2%) the fluence used to produce the plasmas has more influence over the film composition than the relative plume delay. The minimum incorporation of Al corresponded to a relative delay of 0 μs, due to the interaction between plumes during their expansion.

  6. Effect of Hydrogen ion beam irradiation onto the FIR reflectivity of pulsed laser deposited mirror like Tungsten films

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A.T.T. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039 (India); Khare, Alika, E-mail: alika@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039 (India); Rao, C.V.S.; Raole, Prakash M.; Vala, Sudhirsinh; Jakhar, Shrichand; Basu, T.K.; Abhangi, Mitul; Makwana, Rajinikant J. [Institute for Plasma Research, Bhat, Gandhinagar 382 428 (India)

    2012-04-15

    Graphical abstract: The specular FIR reflectivity of the W{sub 1}, W{sub 2}, W{sub 3} and W{sub 4} mirrors before and after 8 keV Hydrogen ion beam irradiation. Highlights: Black-Right-Pointing-Pointer Mirror like W thin films were obtained via PLD. Black-Right-Pointing-Pointer The maximum thickness of the Tungsten thin film was {approx}324 nm. Black-Right-Pointing-Pointer Effect of H-ion beam irradiation on the quality of PLD W mirror is reported. Black-Right-Pointing-Pointer Post exposure reflectivity of Tungsten thin films was hardly changed by 2%. - Abstract: The optical quality of the First Mirrors (FMs) of a fusion device (burning plasma experiments, ITER) deteriorates due to the erosion by charge exchange neutrals, re-deposition of the eroded material and the lattice damage by the bombardment of the high energetic particles. This degradation of the optical quality of the plasma facing components in such a harsh environment is a serious concern for the reliability of the spectroscopic based optical diagnostics using FM of a fusion device. In this paper, the effect of 8 keV Hydrogen ion beam irradiation onto the FIR reflectivity of Tungsten thin film mirror is presented. The Tungsten thin films were prepared via Pulsed Laser Deposition (PLD) technique. The Tungsten mirrors were subjected to X-ray Diffraction (XRD), Energy Dispersive X-ray (EDX), Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) for characterization. The specular reflectivities of the Tungsten mirrors before and after exposure to ion beam were recorded with Fourier Transform of Infra-Red (FTIR) technique. The ion penetration depth and straggle into Tungsten thin film and stainless steel (SS) substrate were estimated by Transport of Ions in Matter (TIRM) simulation code. The changes in post exposure IR reflectivity were interpreted in terms of these parameters.

  7. Oxidation of nanostructured Ti films produced by low energy cluster beam deposition: An X-ray Photoelectron Spectroscopy characterization

    Energy Technology Data Exchange (ETDEWEB)

    Simone, Monica de, E-mail: desimone@tasc.infm.it [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy); Snidero, Elena [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy); Coreno, Marcello [CNR-IMIP, c/o Laboratorio TASC Area Science Park Basovizza, 34149 Trieste (Italy); Sincrotrone Trieste ScpA, Area Science Park Basovizza, 34149 Trieste (Italy); Bongiorno, Gero [Fondazione Filarete, v.le Ortles 22/4, 20139 Milano (Italy); Giorgetti, Luca [Istituto Europeo di Oncologia, Dip. di Oncologia Sperimentale, Via Adamello 16, 20139, Milano (Italy); Amati, Matteo [Sincrotrone Trieste ScpA, Area Science Park Basovizza, 34149 Trieste (Italy); Cepek, Cinzia [CNR-IOM Laboratorio TASC, Area Science Park Basovizza, 34149 Trieste (Italy)

    2012-05-01

    We used in-situ X-ray Photoelectron Spectroscopy (XPS) to study the oxidation process of a cluster-assembled metallic titanium film exposed to molecular oxygen at room temperature. The nanostructured film has been grown on a Si(111) substrate, in ultra high vacuum conditions, by coupling a supersonic cluster beam deposition system with an XPS experimental chamber. Our results show that upon in-situ oxygen exposure Ti{sup 3+} is the first oxidation state observed, followed by Ti{sup 4+}, whereas Ti{sup 2+} is practically absent during the whole process. Our results compare well with the existing literature on Ti films produced using other techniques.

  8. Improved electrochemical performance of spinel LiMn1.5Ni0.5O4 through MgF2 nano-coating

    Science.gov (United States)

    Wu, Qing; Zhang, Xiaoping; Sun, Shuwei; Wan, Ning; Pan, Du; Bai, Ying; Zhu, Huiyuan; Hu, Yong-Sheng; Dai, Sheng

    2015-09-01

    A spinel LiMn1.5Ni0.5O4 (LMNO) cathode material synthesized by a sol-gel method is modified by MgF2 nano-coating via a wet coating strategy. The results of X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) showed that the MgF2 nano-coating layers do not physically change the bulk structure of the pristine material. Compared with the pristine compound, the MgF2-coated LMNO electrodes display enhanced cycling stabilities. Particularly, the 5 wt% MgF2-coated LMNO demonstrates the best reversibility, with a capacity retention of 89.9% after 100 cycles, much higher than that of the pristine material, 69.3%. The dQ/dV analysis and apparent Li+ diffusion coefficient calculation prove that the kinetic properties are enhanced after MgF2 surface modification, which partly explains the improved electrochemical performances. Electrochemical impedance spectroscopy (EIS) and Fourier transform infrared spectroscopy (FTIR) data confirm that the MgF2 coating layer helps in suppressing the fast growth of the solid electrolyte interface (SEI) film in repeated cycling, which effectively stabilizes the spinel structure. Additionally, differential scanning calorimetry (DSC) tests show that the MgF2 nano-coating layer also helps in enhancing the thermal stability of the LMNO cathode.A spinel LiMn1.5Ni0.5O4 (LMNO) cathode material synthesized by a sol-gel method is modified by MgF2 nano-coating via a wet coating strategy. The results of X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) showed that the MgF2 nano-coating layers do not physically change the bulk structure of the pristine material. Compared with the pristine compound, the MgF2-coated LMNO electrodes display enhanced cycling stabilities. Particularly, the 5 wt% MgF2-coated LMNO demonstrates the best reversibility

  9. Damage evaluation in metal structures subjected to high energy deposition due to particle beams

    CERN Document Server

    Peroni, L; Dallocchio, A

    2011-01-01

    The unprecedented energy intensities of modern hadron accelerators yield special problems with the materials that are placed close to or into the high intensity beams. The energy stored in a single beam of LHC particle accelerator is equivalent to about 80 kg of TNT explosive, stored in a transverse beam area with a typical value of 0.2 mm×0.2 mm. The materials placed close to the beam are used at, or even beyond, their damage limits. However, it is very difficult to predict structural efficiency and robustness accurately: beam-induced damage for high energy and high intensity occurs in a regime where practical experience does not exist. The interaction between high energy particle beams and metals induces a sudden non uniform temperature increase. This provokes a dynamic response of the structure entailing thermal stress waves and thermally induced vibrations or even the failure of the component. This study is performed in order to estimate the damage on a copper component due to the impact with a 7 TeV pro...

  10. Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures

    Institute of Scientific and Technical Information of China (English)

    梅显秀; 刘振民; 马腾才; 董闯

    2003-01-01

    Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 25℃to 400 ℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of spa carbon in the films is about 40% when the substrate temperature is below 300 ℃. With increasing substrate temperature from 25 ℃ to 400 ℃, the concentration of sp3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp2 carbon when the substrate temperature is above 300 ℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.

  11. Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    Duan Shu-Qing; Tan Na; Zhang Qing-Yu

    2005-01-01

    Er-doped Sio_ films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atomosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction inducated that annealing induces a microstructure change from amorphous to crystlline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped Sio_ films has been studies and discussed.

  12. Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

    International Nuclear Information System (INIS)

    Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can be exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.

  13. Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Kamakshi, Koppole; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Gomes, M. J. M.

    2016-05-01

    In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

  14. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y2O3/Si is obtained at ∼25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.70 full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired

  15. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Stan, Liliana; Arendt, Paul N; DePaula, Raymond F; Usov, Igor O; Groves, James R [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-04-15

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y{sub 2}O{sub 3}/Si is obtained at {approx}25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.7{sup 0} full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

  16. Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

    Science.gov (United States)

    Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

    2016-09-01

    Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

  17. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    Science.gov (United States)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  18. High-throughput shadow mask printing of passive electrical components on paper by supersonic cluster beam deposition

    Science.gov (United States)

    Caruso, Francesco; Bellacicca, Andrea; Milani, Paolo

    2016-04-01

    We report the rapid prototyping of passive electrical components (resistors and capacitors) on plain paper by an additive and parallel technology consisting of supersonic cluster beam deposition (SCBD) coupled with shadow mask printing. Cluster-assembled films have a growth mechanism substantially different from that of atom-assembled ones providing the possibility of a fine tuning of their electrical conduction properties around the percolative conduction threshold. Exploiting the precise control on cluster beam intensity and shape typical of SCBD, we produced, in a one-step process, batches of resistors with resistance values spanning a range of two orders of magnitude. Parallel plate capacitors with paper as the dielectric medium were also produced with capacitance in the range of tens of picofarads. Compared to standard deposition technologies, SCBD allows for a very efficient use of raw materials and the rapid production of components with different shape and dimensions while controlling independently the electrical characteristics. Discrete electrical components produced by SCBD are very robust against deformation and bending, and they can be easily assembled to build circuits with desired characteristics. The availability of large batches of these components enables the rapid and cheap prototyping and integration of electrical components on paper as building blocks of more complex systems.

  19. Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    MU Hai-Chuan; REN Cong-Xin; JIANG Bing-Yao; DING Xing-Zhao; YU Yue-Hui; WANG Xi; LIU Xiang-Huai; ZHOU Gui-En; JIA Yun-Bo

    2000-01-01

    The (001) oriented yttria-stabilized zirconia (YSZ) films with in-plane biaxial texture have been deposited on Si(lll ) substrates by ion beam assisted deposition at ambient temperature. The effects of ion/atom arrival rate ratio (R=(Ar+ +O2+)/ZrO2) and incident angle of bombarding ion beam on the film texture development were investigated. It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1.9, but it was degraded with the further increase of R. The optimal in-plane biaxial texture, whose full width at half maximum of the (lll) φ-scan spectrum is 14°, can be obtained at R=1.9 and incident angle of 55°. For a fixed R, the optimal crystallinity and in-plane biaxial alignment of the YSZ films did not appear at the same incident angle and showed an opposite variation with the change of the incident angle from 51° to 55°. C-axis lignment (perpendicular to substrate surface) does not show any substantial variation with the change of incident angle within the range of 47° - 56°.

  20. Fabrication of single TiO2 nanotube devices with Pt interconnections using electron- and ion-beam-assisted deposition

    Science.gov (United States)

    Lee, Mingun; Cha, Dongkyu; Huang, Jie; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    Device fabrication using nanostructured materials, such as nanotubes, requires appropriate metal interconnections between nanotubes and electrical probing pads. Here, electron-beam-assisted deposition (EBAD) and ion-beam-assisted deposition (IBAD) techniques for fabrication of Pt interconnections for single TiO2 nanotube devices are investigated. IBAD conditions were optimized to reduce the leakage current as a result of Pt spreading. The resistivity of the IBAD-Pt was about three orders of magnitude less than that of the EBAD-Pt, due to low carbon concentration and Ga doping, as indicated by X-ray photoelectron spectroscopy analysis. The total resistances of single TiO2 nanotube devices with EBAD- or IBAD-Pt interconnections were 3.82 × 1010 and 4.76 × 108 Ω, respectively. When the resistivity of a single nanotube is low, the high series resistance of EBAD-Pt cannot be ignored. IBAD is a suitable method for nanotechnology applications, such as photocatalysis and biosensors.

  1. AMORPHIZATION IN Nb-M (M=Fe, Co, Ni) BINARY METAL SYSTEMS INDUCED BY ION BEAM ASSISTED DEPOSITION (IBAD)

    Institute of Scientific and Technical Information of China (English)

    F. Pan; F. Zeng; B. Zhao

    2002-01-01

    Ion beam assisted deposition technique (IBAD) was utilized to systematically studyamorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe,Co or Ni). The glass forming range terned as Nb fraction of Nb-Fe system was about34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at.% to 80at.%. Similar percolation patterns were found in amorphousalloy films. The fractal dimensions of the percolation patterns approach to 2, whichindicates 2-D layer growth for amorphous phases. It is regarded that the assistedAr+ ion beam duringthe deposition process plays important role for the 2-D layergrowth. Some metastable crystalline phases were obtained in these three systems byIBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc andhcp phases in Nb-Co and Nb-Ni systems. The formation and competing between theamorphous and the metastable crystalline phases were determined by both the phases'thermodynamic states in binary metal systems and kinetics during IBAD process.

  2. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Muñoz-Tabares, J.A., E-mail: j.a.munoz.tabares@gmail.com [Instituto de Física, Universidad Nacional Autónoma de México, Circuito de la Investigación Científica s/n, Cd Universitaria, 04510 México DF, México (Mexico); Anglada, M. [Departament de Ciència dels Materials i Enginyeria Metallúrgica, Universitat Politècnica de Catalunya, Avda. Diagonal 647 (ETSEIB), 08028 Barcelona (Spain); Reyes-Gasga, J. [Instituto de Física, Universidad Nacional Autónoma de México, Circuito de la Investigación Científica s/n, Cd Universitaria, 04510 México DF, México (Mexico)

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ∼ 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: • We show a new type of artifact induced during preparation of TEM samples by FIB. • Deposition of Ga occurs due to its high affinity for oxygen. • Materials with small grain size (∼ 5 nm) could promote Ga deposition. • Small grain size permits the elastic accommodation of deposited Ga.

  3. The effect of thermal cycling by electron-beam surfacing on structure and wear resistance of deposited M2 steel

    Energy Technology Data Exchange (ETDEWEB)

    Gnyusov, S.F.; Ignatov, A.A. [Tomsk Polytechnic University, Tomsk (Russian Federation); Durakov, V.G. [Institute of Strength Physics and Materials Science, SB RAS, Tomsk (Russian Federation); Tarasov, S.Yu., E-mail: tsy@ispms.ru [Institute of Strength Physics and Materials Science, SB RAS, Tomsk (Russian Federation)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Thermocycling by multi-pass electron beam assisted deposition of M2 steel powder. Black-Right-Pointing-Pointer Multimodal size distribution of reinforcement carbide particles. Black-Right-Pointing-Pointer Thermocycling conditions had great effect on retained austenite and martensite. Black-Right-Pointing-Pointer Wear resistance improved due to thermocycling and strain-induced martensite. - Abstract: Structural features of coatings obtained by multiple-pass electron beam cladding of M2 steel powder on steel substrates have been investigated. It is established that a multi-modal size distribution (d{sub 1} = 3.8 {mu}m, d{sub 2} = 0.65 {mu}m, d{sub 3} < 0.25 {mu}m) of reinforcement particles was generated in the carbide subsystem of the clad layer. The volume content of secondary carbides M{sub 6}C and residual austenite of matrix can be changed in the wide range depending on the thermal cycling induced by incident electron beam. The higher is the content of the retained austenite in the coating, the higher is the wear resistance of the coating due to {gamma} {yields} {alpha} Prime transformation in cooling and precipitation of secondary carbides in the matrix grains.

  4. Evaluation of Beam Loss and Energy Depositions for a Possible Phase II Design for LHC Collimation

    Energy Technology Data Exchange (ETDEWEB)

    Lari, L.; /EPFL-ISIC, Lausanne /CERN; Assmann, R.; /CERN; Bracco, C.; /EPFL-ISIC, Lausanne /CERN; Brugger, M.; /CERN; Cerutti, F.; /CERN; Doyle, E.; /SLAC; Ferrari, A.; /CERN; Keller, L.; Lundgren, S.; Markiewicz, Thomas W.; /SLAC; Mauri, M.; Redaelli, S.; Sarchiapone, L.; /CERN; Smith, J.; /SLAC; Vlachoudis, V.; Weiler, T.; /CERN

    2011-11-07

    The LHC beams are designed to have high stability and to be stored for many hours. The nominal beam intensity lifetime is expected to be of the order of 20h. The Phase II collimation system has to be able to handle particle losses in stable physics conditions at 7 TeV in order to avoid beam aborts and to allow correction of parameters and restoration to nominal conditions. Monte Carlo simulations are needed in order to evaluate the behavior of metallic high-Z collimators during operation scenarios using a realistic distribution of losses, which is a mix of the three limiting halo cases. Moreover, the consequences in the IR7 insertion of the worst (case) abnormal beam loss are evaluated. The case refers to a spontaneous trigger of the horizontal extraction kicker at top energy, when Phase II collimators are used. These studies are an important input for engineering design of the collimation Phase II system and for the evaluation of their effect on adjacent components. The goal is to build collimators that can survive the expected conditions during LHC stable physics runs, in order to avoid quenches of the SC magnets and to protect other LHC equipments.

  5. Evaluation of Beam Losses And Energy Deposition for a Possible Phase II Design for LHC Collimation

    Energy Technology Data Exchange (ETDEWEB)

    Lari, L.; Assmann, R.W.; Bracco, C.; Brugger, M.; Cerutti, F.; Ferrari, A.; Mauri, M.; Redaelli, S.; Sarchiapone, L.; Vlachoudis, Vasilis; Weiler, Th.; /CERN; Doyle, J.E.; Keller, L.; Lundgren, S.A.; Markiewicz, Thomas W.; Smith, J.C.; /SLAC; Lari, L.; /LPHE, Lausanne

    2011-11-01

    The Large Hadron Collider (LHC) beams are designed to have high stability and to be stored for many hours. The nominal beam intensity lifetime is expected to be of the order of 20h. The Phase II collimation system has to be able to handle particle losses in stable physics conditions at 7 TeV in order to avoid beam aborts and to allow correction of parameters and restoration to nominal conditions. Monte Carlo simulations are needed in order to evaluate the behavior of metallic high-Z collimators during operation scenarios using a realistic distribution of losses, which is a mix of the three limiting halo cases. Moreover, the consequences in the IR7 insertion of the worst (case) abnormal beam loss are evaluated. The case refers to a spontaneous trigger of the horizontal extraction kicker at top energy, when Phase II collimators are used. These studies are an important input for engineering design of the collimation Phase II system and for the evaluation of their effect on adjacent components. The goal is to build collimators that can survive the expected conditions during LHC stable physics runs, in order to avoid quenches of the SC magnets and to protect other LHC equipments.

  6. Pulsed electron beam deposition of highly oriented thin films of polytetrafluoroethylene

    Science.gov (United States)

    Chandra, Vimlesh; Manoharan, Solomon S.

    2008-04-01

    Thin films of polytetrafluoroethylene (PTFE) were deposited by pulsed electron deposition (PED) technique. The transmission electron microscopy (TEM) image of the RT fabricated (20 Å thick) film on carbon coated copper grid shows crystalline nature. Infrared spectra show one to one correspondence between PED ablated film and the PTFE bulk target. The asymmetrical and symmetrical -CF 2- stretching modes were observed at 1220 and 1156 cm -1, respectively. The -CF 2- wagging and bending modes occur at 644 and 512 cm -1, respectively. X-ray diffraction patterns of the film deposited at room temperature (RT) show oriented film along (1 0 0) plane of hexagonal structure and the crystalline nature is retained up to 300 °C on vacuum annealing. The room temperature fabricated film shows smooth and pin hole free surface whereas post-annealing brings discontinuity, roughness and pin holes.

  7. Integration of biaxally aligned conducting oxides with silicon using ion-beam assisted deposited MgO templates

    Energy Technology Data Exchange (ETDEWEB)

    Park, B. H. (Bae Ho); Groves, J. R. (James R.); DePaula, R. F. (Raymond Felix); Jia, Quanxi; Arendt, P. N. (Paul N.); Emmert, L. A. (Luke A.)

    2001-01-01

    Two conducting oxides, La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) and SrRuO{sub 3}, were deposited by pulsed laser ablation onto silicon substrates coated with biaxially textured MgO on an amorphous silicon nitride isolation layer. Comparison is made between templates using just 10 nm of ion-beam assisted deposited (IBAD) MgO and substrates with an additional 100 nm of homoepitaxial MgO. Both of these conducting oxide layers exhibited in-plane and out-of-plane texture, on the order of that obtained by the underlying MgO. The SrRuO{sub 3} was c-axis oriented on both substrates, but exhibited a slightly sharper out-of-plane texture when the homoepitaxial MgO layer was included. On the other hand, the LSCO showed only (100) orientation when deposited directly on the IBAD-MgO templates, whereas a significant (110) peak was observed for films on the homoepitaxial MgO. A simple calculation of the distribution of grain boundary angles, assuming a normal distribution of grains, is also presented.

  8. The energy dependence on microstructure of (Ti-Al-V) nitrides deposited by dual ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Huebler, R.; Tentardini, E.K.; Blando, E. [Rio Grande do Sul Univ., Porto Alegre (Brazil). Inst. de Fisica; Teixeira, S.R.; Vasconcellos, M.Z.; Soares, M. [Instituto de Fisica da Universidade Federal do Rio Grande do Sul, 90619900, Porto Alegre (Brazil); Kamijo, E.; Fujiwara, M. [Faculty of Science and Technology, Ryokoku University, Seta, Otsu (Japan)

    1999-09-01

    Ti-6Al-4V alloys and their nitrides are of wide interest in technological applications because of their exceptional properties. The structure and composition of these alloys are strongly dependent on the deposition conditions. In this work, we report the influence of the ion energy on the film characteristics. We have used a dual ion beam sputtering (DIBS) equipment where the reactive ion (N{sub 2}) acceleration voltage was changed in the range of 200 to 400 V. The film structure was studied by means of an X-ray diffractometer (XRD) and the chemical composition and nitration degree were measured by X-ray photoelectron spectroscopy (XPS) and by a microprobe spectrometer. Coating hardness was checked using an ultramicrohardness tester equipped with a Vickers' indentor, and the corrosion resistance power was studied by means of cyclic voltammetry. The substrates used here were stainless steel ISO 316, the same used in most femoral prosthesis, and silicon monocrystals for the analytical tests. We compare the results of the coatings deposited by DIBS with films deposited by reactive magnetron sputtering. (orig.)

  9. Low-energy ion beam-based deposition of gallium nitride.

    Science.gov (United States)

    Vasquez, M R; Wada, M

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies. PMID:26932113

  10. Low-energy ion beam-based deposition of gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Vasquez, M. R., E-mail: mrvasquez@coe.upd.edu.ph [Department of Mining, Metallurgical, and Materials Engineering, College of Engineering, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Wada, M. [Graduate School of Science and Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)

    2016-02-15

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  11. A Comparison of the Effects of RF Plasma Discharge and Ion Beam Supply on the Growth of Cubic Boron Nitride Films Formed by Laser Physical Vapor Deposition

    Science.gov (United States)

    Kaneda, Kayo; Shibata, Kimihiro

    1994-01-01

    This paper presents a comparison of the effects of RF plasma discharge and ion beam supply on the growth of cubic boron nitride films formed by excimer laser physical vapor deposition (laser PVD). The film structure was analyzed by fourier transformation infrared region (FT-IR) spectroscopy and thin-film X-ray diffraction analysis. The structure of the film deposited with an RF plasma discharge provided between the substrate and target was hexagonal BN. On the other hand, that of the film deposited by irradiating the substrate directly with an ion beam was hexagonal BN (hBN) and cubic BN (cBN). It is thought that direct irradiation of the vapor generated from the target by accelerated ions increased the activation energy of the vapor, with the result that the film structure was changed. Besides irradiating the substrate directly with the ion beam resulted primarily in the etching of hBN while cBN remained.

  12. Preparation and characterization of BaMgAl10O17:Eu phosphor coated with MgF2 by sol-gel process

    Institute of Scientific and Technical Information of China (English)

    LI Feng; WANG Yu-hua

    2005-01-01

    In order to prevent BaMgAl10 O17 : Eu (BAM) phosphor from thermal degradation, MgF2-coatings on the surface of BAM were prepared by a sol-gel process. The coatings were characterized by X-ray photoelectron spectroscopy and scanning electron microscopy. The results indicate that BAM is successfully coated with homogenous, close MgF2 coatings. The photoluminescence and anti-thermal degradation properties of coated BAM were investigated under 254 and 147 nm excitations. The optimum anti-thermal degradation properties are obtained at the mass ratio of MgF2 to BAM 0. 2% under 254 nm excitation and 0. 5% under 147 nm excitation, respectively. It is considered that trace MgO formed after baked would cause different optimum coating thicknesses under 254 and 147 nm excitations.

  13. Electrospray ion beam deposition and mass spectrometry of nonvolatile molecules and nanomaterials

    OpenAIRE

    Rauschenbach, Stephan; Kern, Klaus

    2008-01-01

    The vacuum deposition of complex functional molecules and nanoparticles by thermal sublimation is often hindered due to their extremely low vapor pressure. This especially impedes the application of ultrahigh vacuum (UHV) based analytical and surface modification techniques for the investigation of these extremely interesting systems. On the other hand, specimen prepared under ambient conditions or in solution are typically not sufficiently well-defined and clean to allow a thorough and preci...

  14. Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control

    Institute of Scientific and Technical Information of China (English)

    Yu-Qiong Li; Hua-Qing Wang; Wu-Yu Wang; Zhi-Nong Yu; He-Shan Liu; Gang Jin

    2012-01-01

    Based on Hartmann-Shack sensor technique,an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2,and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition.The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details,and the stress control methodologies using on-line adjustment and film doping were put forward.The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process,and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect,and the film refractive index decreases with increasing ion energy.A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique,and the intrinsic stress of film can be effectively changed through film doping.

  15. Low-dose patterning of platinum nanoclusters on carbon nanotubes by focused-electron-beam-induced deposition as studied by TEM

    Directory of Open Access Journals (Sweden)

    Xiaoxing Ke

    2013-02-01

    Full Text Available Focused-electron-beam-induced deposition (FEBID is used as a direct-write approach to decorate ultrasmall Pt nanoclusters on carbon nanotubes at selected sites in a straightforward maskless manner. The as-deposited nanostructures are studied by transmission electron microscopy (TEM in 2D and 3D, demonstrating that the Pt nanoclusters are well-dispersed, covering the selected areas of the CNT surface completely. The ability of FEBID to graft nanoclusters on multiple sides, through an electron-transparent target within one step, is unique as a physical deposition method. Using high-resolution TEM we have shown that the CNT structure can be well preserved thanks to the low dose used in FEBID. By tuning the electron-beam parameters, the density and distribution of the nanoclusters can be controlled. The purity of as-deposited nanoclusters can be improved by low-energy electron irradiation at room temperature.

  16. Improved alumina scale adhesion of electron beam physical vapor deposited Dy/Hf-doped β-NiAl coatings

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dongqing; Guo, Hongbo, E-mail: Guo.hongbo@buaa.edu.cn; Peng, Hui; Gong, Shengkai; Xu, Huibin

    2013-10-15

    The cyclic oxidation behavior of Dy/Hf-doped β-NiAl coatings produced by electron beam physical vapor deposition (EB-PVD) was investigated. For the undoped NiAl coating, numerous voids were formed at the alumina scale/coating interface and large rumpling developed in the scale, leading to premature oxide spallation. The addition of Dy and Hf both improved scale adhesion and the alumina scale grown on the NiAl-Hf coating showed better adhesion than that on the NiAl-Dy coating, although the suppressing effect on interfacial void formation and the scale rumpling resistance were stronger in the NiAl-Dy coating. It is proposed that the segregation of Dy and Hf ions at the scale/coating interfaces not only prevent interfacial sulfur segregation but also may directly enhance interfacial adhesion by participating in bonding across the interfaces, and this strengthening effect is relatively stronger for Hf ionic segregation.

  17. Improved alumina scale adhesion of electron beam physical vapor deposited Dy/Hf-doped β-NiAl coatings

    Science.gov (United States)

    Li, Dongqing; Guo, Hongbo; Peng, Hui; Gong, Shengkai; Xu, Huibin

    2013-10-01

    The cyclic oxidation behavior of Dy/Hf-doped β-NiAl coatings produced by electron beam physical vapor deposition (EB-PVD) was investigated. For the undoped NiAl coating, numerous voids were formed at the alumina scale/coating interface and large rumpling developed in the scale, leading to premature oxide spallation. The addition of Dy and Hf both improved scale adhesion and the alumina scale grown on the NiAl-Hf coating showed better adhesion than that on the NiAl-Dy coating, although the suppressing effect on interfacial void formation and the scale rumpling resistance were stronger in the NiAl-Dy coating. It is proposed that the segregation of Dy and Hf ions at the scale/coating interfaces not only prevent interfacial sulfur segregation but also may directly enhance interfacial adhesion by participating in bonding across the interfaces, and this strengthening effect is relatively stronger for Hf ionic segregation.

  18. Preparation of diamond-like carbon and boron nitirde films by high-intensity pulsed ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rej, D.J.; Davis, H.A. [Los Alamos National Lab., NM (United States); Remnev, G.E. [Tomsk Polytechnic Univ., Tomsk (Russian Federation). Nuclear Physics Institute.] [and others

    1995-05-01

    Intense ion beams (300-keV C{sup +}, O{sup +}, and H{sup +}, 20--30 kA, 50 to 400-ns pulsewidth, up to 0.3-Hz repetition rate) were used to prepare diamond-like carbon (DLC) and boron nitride (BN) films. Deposition rates of up to 25{plus_minus}5 nm/pulse were obtained with instantaneous rates exceeding 1 mm/s. Most films were uniform, light brown, translucent, and nonporous with some micron-size particulates. Raman and parallel electron energy loss spectroscopy indicated the presence of DLC. The films possessed favorable electron field-emission characteristics desirable for cold-cathode displays. Transmission electron microscopy (TEM) and transmission electron diffraction (TED) revealed that the C films contained diamond crystals with 25 to 125-nm grain size. BN films were composed of hexagonal, cubic and wurtzite phases.

  19. The effect of oxygen flow rate on refractive index of aluminum oxide film deposited by electron beam evaporation technique

    Directory of Open Access Journals (Sweden)

    R Shakouri

    2016-02-01

    Full Text Available The effects of oxygen flow rate on refractive index of aluminum oxide film have been investigated. The Al2O3 films are deposited by electron beam on glass substrate at different oxygen flow rates. The substrate was heated to reach  and the temperature was constant during the thin film growth. The transmittance spectrum of samples was recorded in the wavelength 400-800 nm.  Then, using the maxima and minima of transmittance the refractive index and the extinction coefficient of samples were determined. It has been found that if we reduce the oxygen flow, while the evaporation rate is kept constant, the refractive index of Al2O3 films increases. On the other hand, reduced oxygen pressure causes the Al2O3 films to have some absorption.

  20. Electron Beam-Physical Vapor Deposited TiAl-based Laminated Composite Sheet with Nb Layer Toughening

    Institute of Scientific and Technical Information of China (English)

    ZHANG De-ming; CHEN Gui-qing; HAN Jie-cai; MENG Song-he

    2006-01-01

    The TiAl-based laminated composite sheet of 150 mm × 100 mm × 0.2 mm, with 24 TiAl layers and 23 Nb layers laid alternately one on another, was successfully fabricated using the electron beam-physical vapor deposition (EB-PVD) method. The microstructure and properties of the sheet were investigated on an atomic force microscope (AFM), a scanning electron microscope (SEM) and a tensile testing machine. The results indicate that the evenly distributed Nb layers are well joined with the TiAl layers, and the interfaces between layers are transparent, and every interlayer spacing is of about 8 μm. The fractures appear to be a mixture of intergranular fractures and somewhat ductile quasi-cleavage ones. Despite its slight influence on ultimate tensile strength, the inserts of Nb layers efficiently increase the room temperature ductility of TiAl-based alloys due to the crack deflection effect.

  1. Internal transport barrier triggered by non-linear lower hybrid wave deposition under condition of beam-driven toroidal rotation

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Q. D., E-mail: qgao@swip.ac.cn [Southwestern Institute of Physics, Chengdu 610041 (China); Budny, R. V. [Princeton Plasma Physics Laboratory, Princeton University, Princeton, New Jersey 08543 (United States)

    2015-03-15

    By using gyro-Landau fluid transport model (GLF23), time-dependent integrated modeling is carried out using TRANSP to explore the dynamic process of internal transport barrier (ITB) formation in the neutral beam heating discharges. When the current profile is controlled by LHCD (lower hybrid current drive), with appropriate neutral beam injection, the nonlinear interplay between the transport determined gradients in the plasma temperature (T{sub i,e}) and toroidal velocity (V{sub ϕ}) and the E×B flow shear (including q-profile) produces transport bifurcations, generating spontaneously a stepwise growing ITB. In the discharge, the constraints imposed by the wave propagation condition causes interplay of the LH driven current distribution with the plasma configuration modification, which constitutes non-linearity in the LH wave deposition. The non-linear effects cause bifurcation in LHCD, generating two distinct quasi-stationary reversed magnetic shear configurations. The change of current profile during the transition period between the two quasi-stationary states results in increase of the E×B shearing flow arising from toroidal rotation. The turbulence transport suppression by sheared E×B flow during the ITB development is analysed, and the temporal evolution of some parameters characterized the plasma confinement is examined. Ample evidence shows that onset of the ITB development is correlated with the enhancement of E×B shearing rate caused by the bifurcation in LHCD. It is suggested that the ITB triggering is associated with the non-linear effects of the LH power deposition.

  2. Hydroxyapatite coating on the Ti-35Nb-xZr alloy by electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Division of Restorative and Prosthetic Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave. Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials and Research Center for Oral Disease Regulation of the Aged, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials and Research Center for Oral Disease Regulation of the Aged, Chosun University, Gwangju (Korea, Republic of); Eun, Sang-Won [Department of Applied Advanced Materials, Korea Polytechnic V Colleges (Korea, Republic of)

    2011-08-01

    The aim of this study was to investigate the hydroxyapatite coating on the Ti-35Nb-xZr alloy by electron beam-physical vapor deposition. The Ti-35Nb-xZr ternary alloys contained from 3 wt.% to 10 wt.% Zr content were manufactured by arc melting furnace. Hydroxyapatite (HA) coatings were prepared by electron-beam physical vapor deposition (EB-PVD) method, and crystallization treatment was performed in Ar atmosphere at 300 and 500 deg. C for 1 h. The coated surface morphology of Ti-35Nb-xZr alloy was examined by FE-SEM, EDX and XRD, respectively. In order to evaluate the corrosion behavior, the tests were performed by potentiodynamic, cyclic polarization and AC impedance test. All the electrochemical data were obtained using a potentiostat. The Ti-35Nb-xZr alloys exhibited equiaxed structure with {beta} phase, the peak of {beta} phase increased with Zr contents. The hardness and elastic modulus of Ti-35Nb-xZr alloys decreased as Zr content increased. The HA coated layer was approximately 150 nm and Ca/P ratio of HA coated surface after heat treatment at 500 deg. C was around 1.67. The HA thin film consisted of small droplets with spherical shape by crystallization. From the anodic polarization curves, HA coated and heat treated Ti-35Nb-10Zr alloy showed higher corrosion potential than other samples. HA coated film on the Ti-35Nb-10Zr alloy can be shown high polarization resistance by crystallization.

  3. Mechanical and thermoelastic characteristics of optical thin films deposited by dual ion beam sputtering.

    Science.gov (United States)

    Cetinörgü, Eda; Baloukas, Bill; Zabeida, Oleg; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik

    2009-08-10

    Mechanical and thermoelastic properties of optical films are very important to ensure the performance of optical interference filters and optical coating systems. We systematically study the growth and the mechanical and thermoelastic characteristics of niobium oxide (Nb(2)O(5)), tantalum oxide (Ta(2)O(5)), and silicon dioxide (SiO(2)) thin films prepared by dual ion beam sputtering. First, we investigate the stress (sigma), hardness (H), reduced Young's modulus (E(r)), and scratch resistance. Second, we focus on the methodology and assessment of the coefficient of thermal expansion (CTE) and Poisson's ratio (nu) using the two-substrate method. For the high refractive index films, namely, Nb(2)O(5) (n at 550 nm=2.30) and Ta(2)O(5) (n at 550 nm=2.13), we obtained H approximately 6 GPa, E(r) approximately 125 GPa, CTE=4.9x10(-6) degrees C(-1), nu=0.22, and H approximately 7 GPa, E(r) approximately 133 GPa, CTE=4.4x10(-6) degrees C(-1), and nu=0.27, respectively. In comparison, for SiO(2) (n at 550 nm=1.48), these values are H approximately 9.5 GPa, E(r) approximately 87 GPa, CTE=2.1x10(-6) degrees C(-1), and nu=0.11. Correlations between the growth conditions (secondary beam ion energy and ion current), the microstructure, and the film properties are discussed. PMID:19668268

  4. Electron beam-physical vapor deposition of SiC/SiO 2 high emissivity thin film

    Science.gov (United States)

    Yi, Jian; He, XiaoDong; Sun, Yue; Li, Yao

    2007-02-01

    When heated by high-energy electron beam (EB), SiC can decompose into C and Si vapor. Subsequently, Si vapor reacts with metal oxide thin film on substrate surface and formats dense SiO 2 thin film at high substrate temperature. By means of the two reactions, SiC/SiO 2 composite thin film was prepared on the pre-oxidized 316 stainless steel (SS) substrate by electron beam-physical vapor deposition (EB-PVD) only using β-SiC target at 1000 °C. The thin film was examined by energy dispersive spectroscopy (EDS), grazing incidence X-ray asymmetry diffraction (GIAXD), scanning electron microscopy (SEM), atomic force microscopy (AFM), backscattered electron image (BSE), electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Fourier transformed infra-red (FT-IR) spectroscopy. The analysis results show that the thin film is mainly composed of imperfect nano-crystalline phases of 3C-SiC and SiO 2, especially, SiO 2 phase is nearly amorphous. Moreover, the smooth and dense thin film surface consists of nano-sized particles, and the interface between SiC/SiO 2 composite thin film and SS substrate is perfect. At last, the emissivity of SS substrate is improved by the SiC/SiO 2 composite thin film.

  5. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  6. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  7. Properties of CdTe films deposited by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Murali, K.R.; Radhakrishna, I.; Nagaraja Rao, K.; Venkatesan, V.K. (Central Electrotechnical Research Inst., Karaikudi (India))

    1990-04-01

    Cadmium telluride thin films were prepared by electron beam evaporation on glass substrates kept at different temperatures in the range 30-300degC. The films were characterized by X-ray diffraction, scanning electron microscopy and optical absorption measurements. The conductivity of the films was measured in the temperature range 100-300 K. While the low temperature data (100-200 K) could be explained by the variable range hopping process, the high temperature data (200-300 K) could be explained on the basis of Seto's model for thermionic emission of the carriers over the grain boundaries. Transmission spectra have indicated a direct and gap around 1.55 eV. (orig.).

  8. Thermal shock behavior of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatings

    International Nuclear Information System (INIS)

    Highlights: • TBCs of (Ni, Pt)Al bond coat with grit blasting process and YSZ ceramic coating. • Grain boundary ridges are the sites for spallation damage initiation in TBCs. • Ridges removed, cavities formation appeared and the damage initiation deteriorated. • Damage initiation and progression at interface lead to a buckling failure. - Abstract: Thermal barrier coating systems (TBCs) including of chemical vapor deposited (Ni, Pt)Al bond coat with grit blasting process and electron beam physical vapor deposited Y2O3-stabilized-ZrO2 (YSZ) ceramic coating were investigated. The phase structures, surface and cross-sectional morphologies, thermal shock behaviors and residual stresses of the coatings were studied in detail. Grain boundary ridges still remain on the surface of bond coat prior to the deposition of the ceramic coating, which are shown to be the major sites for spallation damage initiation in TBCs. When these ridges are mostly removed, they appear some of cavities formation and then the damage initiation mode is deteriorated. Damage initiation and progression occurs at the bond coat to thermally grown oxide (TGO) interface leading to a buckling failure behavior. A buckle failure once started may be arrested when it runs into a region of high bond coat to TGO interface toughness. Thus, complete failure requires further loss in toughness of the bond coat to TGO interface during cooling. The suppressed cavities formation, the removed ridges at the grain boundaries, the relative high TGO to bond coat interface toughness, the uniform growth behavior of TGO thickening and the lower of the residual stress are the primary factors for prolonging the lifetime of TBCs

  9. Thermal shock behavior of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhenhua, E-mail: zhxuciac@163.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Dai, Jianwei [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Niu, Jing [Shenyang Liming Aero-engine (Group) Corporation Ltd., Institute of Metallurgical Technology, Technical Center, Shengyang 110043 (China); Li, Na; Huang, Guanghong; He, Limin [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China)

    2014-12-25

    Highlights: • TBCs of (Ni, Pt)Al bond coat with grit blasting process and YSZ ceramic coating. • Grain boundary ridges are the sites for spallation damage initiation in TBCs. • Ridges removed, cavities formation appeared and the damage initiation deteriorated. • Damage initiation and progression at interface lead to a buckling failure. - Abstract: Thermal barrier coating systems (TBCs) including of chemical vapor deposited (Ni, Pt)Al bond coat with grit blasting process and electron beam physical vapor deposited Y{sub 2}O{sub 3}-stabilized-ZrO{sub 2} (YSZ) ceramic coating were investigated. The phase structures, surface and cross-sectional morphologies, thermal shock behaviors and residual stresses of the coatings were studied in detail. Grain boundary ridges still remain on the surface of bond coat prior to the deposition of the ceramic coating, which are shown to be the major sites for spallation damage initiation in TBCs. When these ridges are mostly removed, they appear some of cavities formation and then the damage initiation mode is deteriorated. Damage initiation and progression occurs at the bond coat to thermally grown oxide (TGO) interface leading to a buckling failure behavior. A buckle failure once started may be arrested when it runs into a region of high bond coat to TGO interface toughness. Thus, complete failure requires further loss in toughness of the bond coat to TGO interface during cooling. The suppressed cavities formation, the removed ridges at the grain boundaries, the relative high TGO to bond coat interface toughness, the uniform growth behavior of TGO thickening and the lower of the residual stress are the primary factors for prolonging the lifetime of TBCs.

  10. Growth of MgF2 optical crystals and their ionic conductivity in the as-grown state and after partial pyrohydrolysis

    Science.gov (United States)

    Karimov, D. N.; Sorokin, N. I.; Chernov, S. P.; Sobolev, B. P.

    2014-11-01

    MgF2 single crystals have been grown from melt by the Bridgman technique in a fluorinating atmosphere. To control the presence of oxygen impurity, it was first suggested to measure the ionic conductivity in MgF2 crystals by impedance spectroscopy. The characteristics of ionic conductivity of " as grown" (i.e., without thermal treatment) crystals and crystals obtained by commercial vacuum technology practically coincide: the volume conductivity σv = 1.4 × 10-7 S/cm at 773 K and the ion-transport activation energy E a = 1.40 ± 0.05 eV. Annealing MgF2 crystals during electrophysical studies upon heating from 293 to 823 K in vacuum (residual pressure ˜1 Pa) for 4 h led to their partial pyrohydrolisis. The influence of this thermal treatment of MgF2 crystals on their optical transmission is studied in the wavelength range of 115-300 nm.

  11. Ion-beam-assisted deposition of Al films with strong preferential orientation

    International Nuclear Information System (INIS)

    Preferential crystal orientation of Al films deposited under simultaneous argon-ion irradiation has been investigated by changing both the ion-to-atom arrival rate ratio (ion-atom ratio) and the ion energy. The intensity of the reflection, I(111), obtained from X-ray diffraction shows a drastic increase with ion irradiation, although the effect on other reflection peaks such as I(200) is only slight. The intensity ratio I(111)/I(200), a parameter for the electromigration resistance of Al films, has shown the highest value at a certain optimum ion-atom ratio. This optimum ion-atom ratio for each ion energy is found to shift toward lower values with increasing ion energy. Under the optimum conditions, the average ion energy per neutral atom after cascade collisions is found to be about 1.2 eV irrespective of the primary ion energy, which is comparable with the energy for the self-diffusion of Al (1.4 eV). The electrical measurements have shown that the resistivity of Al films increases considerably with simultaneous ion irradiation, however, it recovers to a level comparable with that of unassisted films by annealing at 400degC. (orig.)

  12. Flux pinning properties of MgB{sub 2} thin films on Al tape substrates deposited by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Yonekura, K., E-mail: kenji@st.cs.kumamoto-u.ac.jp [Department of Computer Science and Electrical Engineering, Kumamoto University, 2-39-1, Kurokami, Kumamoto 860-8555 (Japan); Fujiyoshi, T.; Sueyoshi, T. [Department of Computer Science and Electrical Engineering, Kumamoto University, 2-39-1, Kurokami, Kumamoto 860-8555 (Japan); Doi, T.; Nishikawa, T. [Department of Electrical and Electronics Engineering, Kagoshima University, 1-21-40, Koorimoto, Kagoshima 890-0065 (Japan)

    2011-11-15

    MgB{sub 2} thin films were deposited on Al tape substrates by EBE. The MgB{sub 2} thin films on Al tapes show much higher J{sub c} values compared to those of MgB{sub 2} wires fabricated by PIT method. The MgB{sub 2} thin films on Al tapes have c-axis correlated pinning centers. The scaling analysis of macroscopic pinning force indicates that a main pinning center is grain boundary. Flux pinning properties have been investigated in two kinds of MgB{sub 2} thin films deposited on Al tapes by electron beam evaporation: One is a stoichiometric composition and the other is a slightly B-rich composition. The values of critical current density J{sub c} in both MgB{sub 2} thin films on Al tape substrates at 10 K in the magnetic field parallel to the c-axis are higher than those in MgB{sub 2} thin films on Si and Al{sub 2}O{sub 3} substrates prepared by the same method. Both the MgB{sub 2} thin films on Al tapes show the large peaks for a magnetic field, B//c in the field-angular dependence of J{sub c}. This result indicates that the MgB{sub 2} thin films have the c-axis correlated pinning centers. Scaling analysis in the reduced macroscopic pinning force density versus the reduced magnetic field at 20 K implies that a main pinning center in both the MgB{sub 2} thin films is grain boundaries. In addition, it was suggested that a nonstoichiometric MgB{sub 2} thin film has additional pinning centers which act effectively in a high magnetic field.

  13. Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

    Science.gov (United States)

    Szkudlarek, Aleksandra; Rodrigues Vaz, Alfredo; Zhang, Yucheng; Rudkowski, Andrzej; Kapusta, Czesław; Erni, Rolf; Moshkalev, Stanislav

    2015-01-01

    Summary In this paper we study in detail the post-growth annealing of a copper-containing material deposited with focused electron beam induced deposition (FEBID). The organometallic precursor Cu(II)(hfac)2 was used for deposition and the results were compared to that of compared to earlier experiments with (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB). Transmission electron microscopy revealed the deposition of amorphous material from Cu(II)(hfac)2. In contrast, as-deposited material from (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB) was nano-composite with Cu nanocrystals dispersed in a carbonaceous matrix. After annealing at around 150–200 °C all deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit due to the migration of Cu atoms from the carbonaceous matrix containing the elements carbon, oxygen, and fluorine. Post-irradiation of deposits with 200 keV electrons in a transmission electron microscope favored the formation of Cu nanocrystals within the carbonaceous matrix of freestanding rods and suppressed the formation on their surface. Electrical four-point measurements on FEBID lines from Cu(hfac)2 showed five orders of magnitude improvement in conductivity when being annealed conventionally and by laser-induced heating in the scanning electron microscope chamber. PMID:26425404

  14. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

    Science.gov (United States)

    Zhang, Z.; Wang, R. F.; Zhang, J.; Li, H. S.; Zhang, J.; Qiu, F.; Yang, J.; Wang, C.; Yang, Y.

    2016-07-01

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer–Weber mode instead of the Stranski–Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  15. Optical switching properties of VOx thin films deposited on Si3N4 substrates using ion beam sputtering

    Science.gov (United States)

    Lu, Jianing; Hu, Ming; Liang, Jiran; Chen, Tao; Tan, Lei

    2009-07-01

    Vanadium dioxide (VO2) thin films, for their property of metal-insulator transition (MIT), have drawn many researchers' attention on optical devices study. Nowadays it is complicated to fabricate single-phase VO2) thin films. Ion beam sputtering is adopted to deposit VOx thin films (main component is VO2) ) on Si3N4, while sputtering power, substrate temperature and partial oxygen pressure of VOx are adjusted. Then annealing technology is utilized to improve the parameter property of VOx thin films. The thin films are tested by AFM, XPS, XRD, Fourier transform infrared spectrometry, tunable semiconductor laser and optical power meter. Both temperature-driven phasetransition and photoexcitation phasetransition of VOx thin films are applied. The samples are heated from 20°C to 80°C, discovering that the phasetransition temperature is about 59°C and the value of resistance before the phasetransition is two orders of magnitude over the value of resistance after the phasetransition. At the wavelength of 1550 nm, the transmission is from 32% to 1%. Besides, the extinction ratio of the thin films sample is obtained. The optical properties show that the VOx thin films have an apparent switching effect in the optical communication fields.

  16. Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

    International Nuclear Information System (INIS)

    An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2

  17. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    Science.gov (United States)

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  18. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    Science.gov (United States)

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure. PMID:27302495

  19. The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hofsaess, H.; Zhang, K.; Pape, A.; Bobes, O.; Broetzmann, M. [Georg-August University Goettingen, II. Institute of Physics, Goettingen (Germany)

    2013-05-15

    We investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of different metallic co-deposited surfactant atoms. The co-deposition of small amounts of metallic atoms, in particular Fe and Mo, is known to have a tremendous impact on the evolution of nanoscale surface patterns on Si. In previous work on ion erosion of Si during co-deposition of Fe atoms, we proposed that chemical interactions between Fe and Si atoms of the steady-state mixed Fe{sub x} Si surface layer formed during ion beam erosion is a dominant driving force for self-organized pattern formation. In particular, we provided experimental evidence for the formation of amorphous iron disilicide. To confirm and generalize such chemical effects on the pattern formation, in particular the tendency for phase separation, we have now irradiated Si surfaces with normal incidence 5 keV Xe ions under simultaneous gracing incidence co-deposition of Fe, Ni, Cu, Mo, W, Pt, and Au surfactant atoms. The selected metals in the two groups (Fe, Ni, Cu) and (W, Pt, Au) are very similar regarding their collision cascade behavior, but strongly differ regarding their tendency to silicide formation. We find pronounced ripple pattern formation only for those co deposited metals (Fe, Mo, Ni, W, and Pt), which are prone to the formation of mono and disilicides. In contrast, for Cu and Au co-deposition the surface remains very flat, even after irradiation at high ion fluence. Because of the very different behavior of Cu compared to Fe, Ni and Au compared to W, Pt, phase separation toward amorphous metal silicide phases is seen as the relevant process for the pattern formation on Si in the case of Fe, Mo, Ni, W, and Pt co-deposition. (orig.)

  20. Optical properties of organic films, multilayers and plasmonic metal-organic waveguides fabricated by organic molecular beam deposition

    Science.gov (United States)

    Wickremasinghe, Niranjala D.

    In this thesis, the optical properties of tris (8-hydroxyquinoline) aluminum (Alq3) and 3,5,9,10-perylentetracarboxylic dianhydride (PTCDA) organic films, PTCDA/ Alq3 multilayers and plasmonic Alq3 -metal waveguides are investigated. The organic films and heterostructures used for this work were fabricated by organic molecular beam deposition (OMBD). We investigated the quenching of the light emission in Alq3 films grown on a Si substrate as a function of cw laser excitation intensity at varying temperatures from 15 to 300 K. The saturation of the singlet-singlet annihilation coefficient was measured with spectrally-integrated (SI) photoluminescence (PL) using a photodiode. The bimolecular quenching coefficient was further studied with time-resolved (TR) PL as a function of 100 fs pulse fluences. The PL quenching is attributed to the annihilation of trapped excitons at Alq3 nanocrystal grain boundaries. The saturation is explained by the limited density of available trapping states at the grain boundaries. Our interpretation is supported by structural investigations of ultrathin Alq3 films with atomic force microscopy (AFM), scanning electron microscopy (SEM) and by comparing the experimental data with calculations using a coupled rate equation model. The wavelength dispersion of the refractive indices of PTCDA and Alq 3 layers and of PTCDA/Alq3 multilayer waveguides grown on Pyrex substrates was investigated. The m-line technique, an evanescent prism coupling technique, was used to determine the layers' thickness and the in-plane (TE modes) and normal (TM modes) refractive indices. The potential for controlling the refractive index dispersion and anisotropy by tailored organic multilayer waveguides is discussed.

  1. Dielectric spectroscopy of electron beam deposited yttrium oxide films examined in metal–insulator–metal sandwich type structures

    Energy Technology Data Exchange (ETDEWEB)

    Wiktorczyk, Tadeusz, E-mail: Tadeusz.Wiktorczyk@pwr.wroc.pl; Biegański, Piotr

    2014-01-31

    This report describes the dielectric properties of electron-beam deposited Y{sub 2}O{sub 3} thin films examined in metal–insulator–metal-type structures fabricated onto quartz substrates. The dielectric measurements have been carried out in the frequency domain from 10 mHz to 10 MHz, with a frequency response analyser. Frequency characteristics of the complex capacitance, as well as Cole–Cole and Nyquist graphs, have been presented and discussed for the temperature range 398–523 K. The results have been analyzed in terms of equivalent circuit models containing resistance–capacitance and constant phase elements (CPE). We have determined the values of the resistance, capacitance and CPE, which characterize the Y{sub 2}O{sub 3} film and near-electrode regions. It has been shown that for high frequencies/low temperatures the dielectric properties are connected with Y{sub 2}O{sub 3} film, while for low frequencies/high temperatures the dielectric response is dominated by the near-electrode regions. In the frequency range 0.1–10 MHz the important contribution of series resistance of electrodes and leads has been observed. - Highlights: • We examine the Al/Y{sub 2}O{sub 3}/Al thin film capacitors for frequency range 10 mHz–10 MHz. • The dielectric data are assigned to Y{sub 2}O{sub 3} and to metal/insulator interfaces. • The capacitance, resistance and constant phase elements describe their properties. • The values of these elements are estimated for temperatures from 398 K to 523 K.

  2. Preparation of MgF2-SiO2 thin films with a low refractive index by a solgel process.

    Science.gov (United States)

    Ishizawa, Hitoshi; Niisaka, Shunsuke; Murata, Tsuyoshi; Tanaka, Akira

    2008-05-01

    Porous MgF(2)-SiO(2) thin films consisting of MgF(2) particles connected by an amorphous SiO(2) binder are prepared by a solgel process. The films have a low refractive index of 1.26, sufficient strength to withstand wiping by a cloth, and a high environmental resistance. The refractive index of the film can be controlled by changing the processing conditions. Films can be uniformly formed on curved substrates and at relatively low temperatures, such as 100 degrees C. The low refractive index of the film, which cannot be achieved by conventional dry processes, is effective in improving the performance of antireflective coatings. PMID:18449247

  3. Development of Self Fire Retardant Melamine-Animal Glue Formaldehyde (MGF) Resin for the Manufacture of BWR Ply Board

    Science.gov (United States)

    Khatua, Pijus Kanti; Dubey, Rajib Kumar; Roymahapatra, Gourisankar; Mishra, Anjan; Shahoo, Shadhu Charan; Kalawate, Aparna

    2016-06-01

    Wood is one of the most sustainable, naturally growing materials that consist mainly of combustible organic carbon compounds. Since plywood are widely used nowadays especially in buildings, furniture and cabinets. Too often the fire behavior of ply-board may be viewed as a drawback. Amino-plastic based thermosetting resin adhesives are the important and most widely used in the plywood panel industries. The fire retardant property of wood panel products by adding animal glue as an additive in the form of MGF resin and used as substitute of melamine for manufacture of plywood. Environment concerns and higher cost of petroleum based resins have resulted in the development of technologies to replace melamine partially by biomaterials for the manufacturing of resin adhesive. Natural bio-based materials such as tannin, CNSL (cardanol), lignin, soya etc. are used as partial substitution of melamine. This article presents the development of melamine-animal glue formaldehyde resin as plywood binder. About 30 % melamine was substituted by animal glue and optimized. The different physico-mechanical and fire retardant property properties tested as per IS: 1734-1983 and IS: 5509-2000 respectively are quite satisfactory. The production of adhesive from melamine with compatible natural proteinous material is cost effective, eco-friendly and enhance the fire retardant property.

  4. Dielectric thin-films by ion-beam sputtering deposition for III-V based infrared optoelectronic imaging

    Science.gov (United States)

    Nguyen, Jean

    The growing technological industry is demanding the development of powerful and smaller devices. Dielectric thin-films can play an important role to help push towards achieving these goals. However, their advantage of high-quality material and low material costs compared to bulk can only be achieved with consideration of the technique, conditions, and parameters. The sensitivity makes every step in the process extremely important, beginning from substrate preparation to the first initial layers of growth and ending with the testing/modeling of the devices. Further, not all applications want bulk-like properties, so the ability to adjust and fine tune the material characteristics opens up a wide range of opportunities with the advancements and can drive the power of the devices to an ultimate level. This work provides the motivation, theoretical basis, and experimental results for performance enhancement of optoelectronic devices through the use of high-quality dielectric thin-films by ion-beam sputtering deposition (IBSD). The advantages and disadvantages to this technique are demonstrated and compared to others. The optimization processes, relationships, and motivation of using seven different thin-film materials have been detailed and provided. Using IBSD, the performance improvements were demonstrated on infrared lasers and detectors. For lasers, a 170% increase in maximum output power was achieved using near-0% percent anti-reflection coatings (AR) and near-100% high-reflection (HR) coatings. Following, wide tunability was achieved by using the structures in an external cavity laser system, showing nearly a three-fold improvement in tuning range. Also, structurally robust lasers were achieved with a custom-tailored HR structure designed for damage resistance to high output power density operation, showing over 14W of peak output power for MOCVD lasers. For infrared photodetectors, over a 4 orders of magnitude decrease in current density and zero-bias resistance

  5. Failure mechanisms of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatings

    Science.gov (United States)

    Vaidyanathan, Krishnakumar

    Thermal barrier coatings (TBCs) allow operation of structural components, such as turbine blades and vanes in industrial and aircraft gas engines, at temperatures close to the substrate melting temperatures. They consist of four different layers; a high strength creep-resistant nickel-based superalloy substrate, an oxidation resistant bond coat (BC), a low thermal conductivity ceramic topcoat and a thermally grown oxide (TGO), that is predominantly alpha-Al 2O3, that forms between the BC and the TBC. Compressive stresses (3--5 GPa) that are generated in the thin TGO (0.25--8 mum) due to the mismatch in thermal coefficient of expansion between the TGO and BC play a critical role in the failure of these coatings. In this study, the failure mechanisms of a commercial yttria-stabilized zirconia (7YSZ) electron beam-physical vapor deposited (EB-PVD) coating on platinum aluminide (beta-(Ni,Pt)Al) bond coat have been identified. Two distinct mechanisms have been found responsible for the observed damage initiation and progression at the TGO/bond coat interface. The first mechanism leads to localized debonding at TGO/bond coat interface due to increased out-of-plane tensile stress, along bond coat features that manifest themselves as ridges. The second mechanism causes cavity formation at the TGO/bond coat interface, driven by cyclic plasticity of the bond coat. It has been found that the debonding at the TGO/bond coat interface due to the first mechanism is solely life determining. The final failure occurs by crack extension along either the TGO/bond coat interface or the TGO/YSZ interface or a combination of both, leading to large scale buckling. Based on these mechanisms, it is demonstrated that the bond coat grain size and the aspect ratio of the ridges have a profound influence on spallation lives of the coating. The removal of these ridges by fine polishing prior to TBC deposition led to a four-fold improvement in life. The failure mechanism identified for the

  6. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  7. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal–semiconductor–metal Schottky photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun, E-mail: lcchao@mail.ntust.edu.tw; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-15

    Highlights: • CuO and Cu{sub 2}O were deposited by reactive ion beam sputter deposition. • Single phase CuO thin film is obtained with Ar:O{sub 2} = 2:1. • CuO MSM PD shows photoresponse from 400 nm to 1.30 μm. • CuO MSM PD is RC limited with a decay time less than 1 μs. - Abstract: Cupric (CuO) and cuprous (Cu{sub 2}O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O{sub 2} ratio from 2:1 to 12:1. With an Ar:O{sub 2} ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu{sub 2}O and Cu{sub 2}O + Cu mixed thin films. As Ar:O{sub 2} ratio reaches 12:1, Cu{sub 2}O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal–semiconductor–metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  8. Complete filling of 41 nm trench pattern using Cu seed layer deposited by SAM-modified electroless plating and electron-beam evaporation

    International Nuclear Information System (INIS)

    To overcome the limitation of the sputtered Cu seed layer in electroplating of Cu interconnects imposed by the shadow effect, a new method for depositing a Cu seed layer on a 41 nm trench pattern based on combination of electroless plating (ELP) and electron-beam (E-Beam) evaporation was developed. A Cu seed layer formed by ELP alone was too thin to be used for electroplating due to its high resistivity. To solve this problem, an additional Cu layer was deposited on top of the trench by E-Beam evaporator to enhance the electrical conductivity of the Cu seed layer. The electrical resistivity of the resulting Cu layer was reduced to 4.8 μΩ cm, which was sufficient for the conductive seed layer for electroplating the 41 nm trench pattern. The gap-filling capability also improved and there were no voids or seams in the 41 nm trench pattern. The proposed method can be an effective solution for fabrication of a conductive seed layer to fill a 41 nm trench pattern by electroplating.

  9. High temperature stability, interface bonding, and mechanical behavior in (beta)-NiAl and Ni3Al matrix composites with reinforcements modified by ion beam enhanced deposition

    Science.gov (United States)

    Grummon, D. S.

    1993-01-01

    Diffusion-bonded NiAl-Al2O3 and Ni3Al-Al2O3 couples were thermally fatigued at 900 C for 1500 and 3500 cycles. The fiber-matrix interface weakened after 3500 cycles for the Saphikon fibers, while the Altex, PRD-166, and FP fibers showed little, if any, degradation. Diffusion bonding of fibers to Nb matrix is being studied. Coating the fibers slightly increases the tensile strength and has a rule-of-mixtures effect on elastic modulus. Push-out tests on Sumitomo and FP fibers in Ni aluminide matrices were repeated. Al2O3 was evaporated directly from pure oxide rod onto acoustically levitated Si carbide particles, using a down-firing, rod-fed electron beam hearth; superior coatings were subsequently produced using concurrent irradiation with 200-eV argon ion-assist beam. The assist beam produced adherent films with reduced tensile stresses. In diffusion bonding in B-doped Ni3Al matrices subjected to compressive bonding at 40 MPa at 1100 C for 1 hr, the diffusion barriers failed to prevent catastrophic particle-matrix reaction, probably because of inadequate film quality. AlN coatings are currently being experimented with, produced by both reactive evaporation and by N(+)-ion enhanced deposition. A 3-kW rod-fed electron-beam-heated evaporation source has been brought into operation.

  10. Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

    International Nuclear Information System (INIS)

    Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min-1; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology

  11. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    M. Rigana Begam

    2013-07-01

    Full Text Available Nanocrystalline Cadmium Telluride (CdTe thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111 preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decreased from 2.87 eV to 2.05 eV with the increase of the crystallite size.

  12. Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling

    OpenAIRE

    Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Szeghalmi, Adriana; Knez, Mato; Weigand, Markus; Snigirev, Anatoly; Snigireva, Irina; Schütz, Gisela

    2013-01-01

    Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ∼10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling,...

  13. Ion beam and complementary SEM and XRD characterization of YBa{sub 2}Cu{sub 3}O{sub 7-x} films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Branescu, Maria [National Institute for R and D of Materials Physics, 105 bis Atomistilor Street, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania)]. E-mail: maria_branescu@yahoo.com; Thome, L. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, 91406 Orsay Cedex (France); Pantelica, D. [' Horia Hulubei' National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, Bucharest (Romania); Ward, I. [CEA, 810 Kifer Road, Sunnyvale, CA 94086 (United States); Vailionis, A. [Stanford University, Stanford, CA 94305 (United States); Ionescu, P. [' Horia Hulubei' National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, Bucharest (Romania)

    2006-08-15

    We report two ion beam analysis techniques, elastic recoil detection analysis (ERDA) and Rutherford backscattering (RBS), to characterize YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films, obtained in situ by pulsed laser deposition (PLD). Initially, ERDA measurements were performed on a thin film to evaluate the PLD rate. RBS measurements correlated with complementary scanning electron microscopy and X-ray diffraction measurements were performed afterwards on a good quality thick YBCO film to determine its stoichiometry, thickness, crystalline structure and surface morphology.

  14. The Influences of Thickness on the Optical and Electrical Properties of Dual-Ion-Beam Sputtering-Deposited Molybdenum-Doped Zinc Oxide Layer

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2011-01-01

    Full Text Available The thickness of transparent conductive oxide (TCO layer significantly affects not only the optical and electrical properties, but also its mechanical durability. To evaluate these influences on the molybdenum-doped zinc oxide layer deposited on a flexible polyethersulfone (PES substrate by using a dual-ion-beam sputtering system, films with various thicknesses were prepared at a same condition and their optical and electrical performances have been compared. The results show that all the deposited films present a crystalline wurtzite structure, but the preferred orientation changes from (002 to (100 with increasing the film thickness. Thicker layer contains a relative higher carrier concentration, but the consequently accumulated higher internal stress might crack the film and retard the carrier mobility. The competition of these two opposite trends for carrier concentration and carrier mobility results in that the electrical resistivity of molybdenum-doped zinc oxide first decreases with the thickness but suddenly rises when a critical thickness is reached.

  15. Energy deposition of ions in materials, and numerical simulations of compression, ignition, and burn of ion beam driven inertial confinement fusion pellets

    International Nuclear Information System (INIS)

    In this article various aspects of ion beam inertial confinement fusion are discussed. In particular a very thorough discussion of aspects of energy deposition of ions in hot plasmas and cold materials is given. Using energy deposition profiles given by these calculations, computer simulations of the compression, ignition and burn phases have been carried out for a single shell, pusher-tamper-DT fuel, multi-layered spherical pellet, suitable for use in a fusion reactor. The gain of this pellet was calculated to be 97 for an input energy of 7.38 MJ and an output energy of 715 MJ. This pellet has several other attractive features, including being environmentally attractive because of minimal radioactivity production and being insensitive to pusher-fuel instabilities. (orig.)

  16. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  17. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  18. The structural transition from epitaxial Fe/Pt multilayers to an ordered FePt film using low energy ion beam sputtering deposition with no buffer layer

    International Nuclear Information System (INIS)

    An epitaxial L10 FePt thin film grown from an [Fe(10 Å)/Pt(10 Å)]15 multilayer with the orientation of (001) was prepared by an ion beam sputtering deposition method without buffer layer. From the measurement data of X-ray diffraction and X-ray reflectivity, the multilayer structure was totally disappeared and a uniform FePt alloy thin film was formed at temperatures higher than 600 °C. For the as-deposited thin film grown at 100 °C, the multilayer already possesses an epitaxial structure. The epitaxial relation is FePt(001)[100]//MgO(001)[100] and this epitaxial relation persists after sequential high temperature annealing. An epitaxial L10 ordered FePt(001) film with order parameter of 0.95 was obtained when the annealing temperature reached 650 °C. The ordered FePt(001) thin film has a perpendicular magnetic anisotropy with a squareness of 0.95 ± 0.03 on the magnetic hysteresis loop. This experiment demonstrates that the low energy ion beam sputtering deposition will preserve the epitaxial relation with no buffer layer between multilayer and substrate. - Highlights: • The Fe/Pt films using ion sputtering deposition with no buffer layer is epitaxial. • Multilayer structure was totally disappeared at temperatures higher than 600 °C. • Order parameter reach 0.95 after annealing at 650 °C. • Interfacial epitaxial FePt alloy already formed at 100 °C

  19. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Boniardi, Mattia; Redaelli, Andrea [Micron Semiconductor Italia S.r.l., Via C. Olivetti, 2, 20864, Agrate Brianza, MB (Italy)

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  20. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

    International Nuclear Information System (INIS)

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10-5 A/cm2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO2/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

  1. Improvement and characterization of high-reflective and anti-reflective nanostructured mirrors by ion beam assisted deposition for 944 nm high power diode laser

    Science.gov (United States)

    Ghadimi-Mahani, A.; Farsad, E.; Goodarzi, A.; Tahamtan, S.; Abbasi, S. P.; Zabihi, M. S.

    2015-11-01

    Single-layer and multi-layer coatings were applied on the surface of diode laser facets as mirrors. This thin film mirrors were designed, deposited, optimized and characterized. The effects of mirrors on facet passivation and optical properties of InGaAs/AlGaAs/GaAs diode lasers were investigated. High-Reflective (HR) and Anti-Reflective (AR) mirrors comprising of four double-layers of Al2O3/Si and a single layer of Al2O3, respectively, were designed and optimized by Macleod software for 944 nm diode lasers. Optimization of Argon flow rate was studied through Alumina thin film deposition by Ion Beam Assisted Deposition (IBAD) for mirror improvement. The nanostructured HR and AR mirrors were deposited on the front and back facet of the laser respectively, by IBAD system under optimum condition. Atomic Force Microscope (AFM), Vis-IR Spectrophotometer, Field Emission Scanning Electron Microscopy (FESEM) and laser characterization Test (P-I) were used to characterize various properties of mirrors and lasers. AFM images show mirror's root mean square roughness is nearly 1 nm. The Spectrophotometer results of the front facet transmission and the back facet reflection are in good agreement with the simulation results. Optical output power (P) versus driving current (I) characteristics, measured before and after coating the facet, revealed a significant output power enhancement due to optimized AR and HR optical coatings on facets.

  2. African swine fever virus Georgia isolate harboring deletions of 9GL and MGF360/505 genes is highly attenuated in swine but does not confer protection against parental virus challenge.

    Science.gov (United States)

    O'Donnell, Vivian; Holinka, Lauren G; Sanford, Brenton; Krug, Peter W; Carlson, Jolene; Pacheco, Juan M; Reese, Bo; Risatti, Guillermo R; Gladue, Douglas P; Borca, Manuel V

    2016-08-01

    African swine fever virus (ASFV) produces a contagious disease of domestic pigs that results in severe economic consequences to the swine industry. Control of the disease has been hampered by the unavailability of vaccines. We recently reported the development of two experimental vaccine strains (ASFV-G-Δ9GL and ASFV-G-ΔMGF) based on the attenuation of the highly virulent and epidemiologically relevant Georgia2007 isolate. Deletion of the 9GL gene or six genes of the MGF360/505 group produced two attenuated ASFV strains which were able to confer protection to animals when challenged with the virulent parental virus. Both viruses, although efficient in inducing protection, present concerns regarding their safety. In an attempt to solve this problem we developed a novel virus strain, ASFV-G-Δ9GL/ΔMGF, based on the deletion of all genes deleted in ASFV-G-Δ9GL and ASFV-G-ΔMGF. ASFV-G-Δ9GL/ΔMGF is the first derivative of a highly virulent ASFV field strain subjected to a double round of recombination events seeking to sequentially delete specific genes. ASFV-G-Δ9GL/ΔMGF showed a decreased ability to replicate in primary swine macrophage cultures relative to that of ASFV-G and ASFV-G-ΔMGF but similar to that of ASFV-G-Δ9GL. ASFV-G-Δ9GL/ΔMGF was attenuated when intramuscularly inoculated into swine, even at doses as high as 10(6) HAD50. Animals infected with doses ranging from 10(2) to 10(6) HAD50 did not present detectable levels of virus in blood at any time post-infection and they did not develop detectable levels of anti-ASFV antibodies. Importantly, ASFV-G-Δ9GL/ΔMGF does not induce protection against challenge with the virulent parental ASFV-G isolate. Results presented here suggest caution towards approaches involving genomic manipulations when developing rationally designed ASFV vaccine strains. PMID:27182007

  3. Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111 Studied by Ion Beam Analysis Methods

    Directory of Open Access Journals (Sweden)

    K. Drogowska

    2012-01-01

    Full Text Available Titanium and titanium dioxide thin films were deposited onto Si(111 substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O2 atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES and Rutherford backscattering spectrometry (RBS. The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM. After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300°C results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS and nuclear Reaction Analysis (N-15 method, using a 15N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.

  4. Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM fabricated by electron-beam-induced deposition of platinum

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Jason, E-mail: jason.brown@physics.ox.ac.uk [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Paul; Ramanujan, Chandra S; Sharp, David N [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Torimitsu, Keiichi [NTT Basic Research Laboratories, NTT Corporation, Atsugi, 243-0198 (Japan); Ryan, John F [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)

    2013-10-15

    We report on the fabrication of electrically conducting, ultra-sharp, high-aspect ratio probes for atomic force microscopy by electron-beam-induced deposition of platinum. Probes of 4.0 ±1.0 nm radius-of-curvature are routinely produced with high repeatability and near-100% yield. Contact-mode topographical imaging of the granular nature of a sputtered gold surface is used to assess the imaging performance of the probes, and the derived power spectral density plots are used to quantify the enhanced sensitivity as a function of spatial frequency. The ability of the probes to reproduce high aspect-ratio features is illustrated by imaging a close-packed array of nanospheres. The electrical resistance of the probes is measured to be of order 100 kΩ. - Highlights: • Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM with radius-of-curvature 4.0±±1.0 nm. • AFM probe fabrication by electron-beam-induced deposition of platinum. • Enhanced spatial resolution demonstrated through AFM of sputtered gold grains. • AFM imaging of deep clefts and recesses on a close-packed array of nanospheres.

  5. 力影响下的IGF-1剪切变体——力生长因子(MGF)研究进展%Study on Splice Variant of Insulin-like Growth Factor-1:Mechano Growth Factor(MGF)under Influence of Force

    Institute of Scientific and Technical Information of China (English)

    王峰; 赵建芳; 王宝珍; 王贵平

    2011-01-01

    The mechano growth factor (MGF) as an splice variant of the insulin-like growth factor-1, which can respond to the stimulation of force signal and adjust expression of itself, and then influence local mass and structure changes, for instance muscle hypertrophy, strength skeleton etc.Studies have shown that the MGF can activate satellite cells and enhancement multiplication of stem cells.It plays an important role on cure sarcopenia, prevent myocardial damage and apoptosis, repair of nerve injury and the treatment of bone defects ect.Therefore, making an intensive study of MGF will be widely used in treat disease and repair tissue engineering.%力生长因子(MGF)作为IGF-1的一个剪切变构体,能够响应力信号刺激而调节自身的表达,进而影响局部组织和结构变化,如肌肉肥大、骨骼强壮等.研究表明,MGF能够激活卫星细胞、促进干细胞增殖,在治疗肌肉丢失、预防心肌损伤、防止细胞凋亡和修复神经损伤以及治疗骨缺陷等方面具有重要的作用,因此对MGF深入研究,期望在疾病治疗和组织工程修复领域取得广泛的应用.

  6. Effect of MgF_2-H_3BO_3 flux on the properties of(Ce,Tb)MgAl_(11)O_(19) phosphor

    Institute of Scientific and Technical Information of China (English)

    冯宗玉; 庄卫东; 黄小卫; 温晓帆; 胡运生

    2010-01-01

    The green-emitting(Ce,Tb)MgAl11O19(CTMA) phosphor was prepared by the conventional high temperature solid-state reaction method.The effect of fluxes on the crystal structure,particle morphology,size distribution and photoluminescence properties of CTMA phosphor was investigated by means of the X-ray powder diffraction,scanning electron microscopy and photoluminescence spectrum.The results showed that the addition of appropriate amount of MgF2-H3BO3 flux improved the phase purity of CTMA phosphor,and influen...

  7. Construction and properties of a two-circuit plasma beam source for the direct plasma beam deposition on hard-material layers and its application at the example of cubic boron nitride

    CERN Document Server

    Haag, M

    2003-01-01

    In the present work a two-circuit plasma beam source for the direct plasma beam deposition of highly insulating thin films was developed and tested using the technologically very interesting system boron nitride as an example. In the utilized source a nitrogen plasma is excited electrodeless via electron cyclotron wave resonance (ECWR). The source plasma is superimposed by a second radio frequency circuit capacitively coupled and operated at variable frequency (v sub c sub a sub p =5..125Mhz) - the so-called extraction circuit. This circuit consists of a coupling electrode carrying a sputter target made from hexagonal boron nitride and a grounded substrate holder. By the self-bias potential between plasma and coupling electrode plasma ions are accelerated towards the target. They sputter the target and thus provide the boron component for the desired film growth. The corresponding self-bias potential on the substrate side ensures the ion bombardment of the film growing on the substrate. The incident ion beam ...

  8. TEM investigations of Ni-Cu thin film coatings, obtained by multilayer technique, coevaporation, and ion beam assisted deposition

    International Nuclear Information System (INIS)

    The microstructural aspects of three different thin film coatings of NiCu at the equiatomic concentration are studied by TEM investigations. Those coatings are: multilayered samples, coevaporated samples, and ion beam assisted codeposited samples. In all cases, under certain experimental conditions of irradiation and annealing, an unexpected L10 ordered phase precipitates in the solid solution matrix of NiCu. (author)

  9. Erosion/re-deposition modeling in an ITER divertor-like high-density, low-temperature plasma beam

    NARCIS (Netherlands)

    van Swaaij, G. A.; Kirschner, A.; Borodin, D.; W. J. Goedheer,; Bystrov, K.; De Temmerman, G.

    2014-01-01

    Transport of hydrocarbon impurities in a high-density (>10 20 m−3), low-temperature (<2 eV) plasma beam was studied with the ERO code. The high ion density and low temperature cause strong Coulomb collisionality between plasma ions and impurity ions. The collisionality is so strong tha

  10. Thermoluminescence of Y{sub 2}O{sub 3}:Tb{sup 3+} thin films deposited by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, Philip R., E-mail: armst230@umn.edu; Mah, Merlin L.; Kim, Sangho S.; Talghader, Joseph J.

    2014-04-15

    Most thermoluminescent materials are created using crystal growth techniques; however, it would be of great utility to identify those few thermoluminescent materials that can be deposited using simpler methods, for example to be compatible with the early portions of a silicon integrated circuit or microelectromechanical fabrication process. In this work, thin films of yttrium oxide with a terbium impurity (Y{sub 2}O{sub 3}:Tb) were deposited on silicon wafers by electron beam evaporation. The source for the Y{sub 2}O{sub 3}:Tb was made by combining Y{sub 2}O{sub 3} and Tb{sub 4}O{sub 7} powders. The approximate thicknesses of the deposited films were 350 nm. After deposition, the films were annealed at 1100 °C for 30 s to improve crystallinity. There is a strong correlation between the x-ray diffraction (XRD) peak intensity and the thermoluminescent glow curve intensity. The glow curve displays at least two peaks at 140 °C and 230 °C. The emission spectra was measured using successive runs with a monochromator set to a different wavelength for each run. There are two main emission peaks at 490 nm and 540 nm. The terbium impurity concentration of approximately 1 mol% was measured using Rutherford backscattering spectrometry (RBS). The Y{sub 2}O{sub 3}:Tb is sensitive to UV, x-ray, and gamma radiation. The luminescent intensity per unit mass of UV irradiated Y{sub 2}O{sub 3}:Tb was about 2 times that of x-ray irradiated TLD-100. -- Highlights: • Y{sub 2}O{sub 3}:Tb{sup 3+} thin film can be deposited using the common microfabrication technique of electron beam evaporation. • The Y{sub 2}O{sub 3}:Tb{sup 3+} requires an anneal of at least 900 °C to show thermoluminescence and 1100 °C anneal for the strongest thermoluminescent signal. • The Y{sub 2}O{sub 3}:Tb{sup 3+} will show a glow curve after being exposed to ionizing radiation from UV, x-ray, and gamma ray sources. • The luminescent intensity per unit mass of the UV irradiated Y{sub 2}O{sub 3}:Tb{sup 3

  11. Characterisation of Pristine and Recoated electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings on AISI M2 steel and WC-Co substrates

    International Nuclear Information System (INIS)

    This paper is focussed on the characterisation of electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings deposited on AISI M2 steel and hardmetal (K10) substrates in two different conditions: Pristine (i.e., coated) and Recoated (i.e., stripped and recoated). Analytical methods, including X-ray diffraction (XRD), scanning electron microscopy, scratch adhesion and pin-on-disc tests were used to evaluate several coating properties. XRD analyses indicated that both Pristine and Recoated coatings consisted of a mixture of hexagonal Cr2N and cubic CrN, regardless of substrate type. For the M2 steel substrate, only small differences were found in terms of coating phases, microstructure, adhesion, friction and wear coefficients between Pristine and Recoated. Recoated on WC-Co (K10) exhibited a less dense microstructure and significant inferior adhesion compared to Pristine on WC-Co (K10). The wear coefficient of Recoated on WC-Co was 100 times higher than those exhibited by all other specimens. The results obtained confirm that the stripping process did not adversely affect the Cr-N properties when this coating was deposited onto M2 steel substrates, but it is clear from the unsatisfactory tribological performance of Recoated on WC-Co that the stripping process is unsuitable for hardmetal substrates

  12. Electron Induced Surface Reactions of cis-Pt(CO)2Cl2: A Route to Focused Electron Beam Induced Deposition of Pure Pt Nanostructures.

    Science.gov (United States)

    Spencer, Julie A; Wu, Yung-Chien; McElwee-White, Lisa; Fairbrother, D Howard

    2016-07-27

    Using mechanistic data from surface science studies on electron-induced reactions of organometallic precursors, cis-Pt(CO)2Cl2 (1) was designed specifically for use in focused electron beam induced deposition (FEBID) of Pt nanostructures. Electron induced decomposition of adsorbed 1 under ultrahigh vacuum (UHV) conditions proceeds through initial CO loss as determined by in situ X-ray photoelectron spectroscopy and mass spectrometry. Although the Pt-Cl bonds remain intact during the initial decomposition step, larger electron doses induce removal of the residual chloride through an electron-stimulated desorption process. FEBID structures created from cis-Pt(CO)2Cl2 under steady state deposition conditions in an Auger spectrometer were determined to be PtCl2, free of carbon and oxygen. Coupled with the electron stimulated removal of chlorine demonstrated in the UHV experiments, the Auger deposition data establish a route to FEBID of pure Pt. Results from this study demonstrate that structure-activity relationships can be used to design new precursors specifically for FEBID.

  13. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Directory of Open Access Journals (Sweden)

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  14. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    Science.gov (United States)

    Bharathy, P. Vijai; Nataraj, D.; Chu, Paul K.; Wang, Huaiyu; Yang, Q.; Kiran, M. S. R. N.; Silvestre-Albero, J.; Mangalaraj, D.

    2010-10-01

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp 3/sp 2 hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  15. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Bharathy, P. Vijai [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Nataraj, D., E-mail: de.natraj@gmail.com [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Chu, Paul K.; Wang, Huaiyu [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Kiran, M.S.R.N. [School of Physics, University of Hyderabad, Hyderabad, Andra Pradesh (India); Silvestre-Albero, J. [Laboratorio de Materiales Avanzados, Departmento de Quimica Inorganica, Universidad de Alicante, Ap 99, E-03080 Alicante (Spain); Mangalaraj, D. [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India)

    2010-10-15

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp{sup 3}/sp{sup 2} hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  16. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    International Nuclear Information System (INIS)

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp3/sp2 hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  17. Hopping of electron transport in granular Cu{sub x}(SiO{sub 2}){sub 1–x} nanocomposite films deposited by ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Svito, I.; Fedotov, A.K. [Belarusian State University, 220030 Minsk (Belarus); Koltunowicz, T.N., E-mail: t.koltunowicz@pollub.pl [Lublin University of Technology, 20-618 Lublin (Poland); Zukowski, P. [Lublin University of Technology, 20-618 Lublin (Poland); Kalinin, Y.; Sitnikov, A. [Voronezh State Technical University, 250770 Voronezh (Russian Federation); Czarnacka, K. [Lublin University of Technology, 20-618 Lublin (Poland); Saad, A. [Al Balqa Applied University, Physics Department, P.O. Box 4545, Amman 11953 (Jordan)

    2014-12-05

    Highlights: • Nanocomposites deposited in the argon ambient. • Cu{sub x}(SiO{sub 2}){sub 1–x} nanocomposite films (0.36 < x < 0.73, 3–5 μm thickness). • Formation of the “shells” is probably due to the partial oxidation of Cu nanoparticles. - Abstract: The paper presents investigation into the Cu{sub x}(SiO{sub 2}){sub 1–x} nanocomposite films (0.36 < x < 0.73, 3–5 μm thick) deposited by ion-beam sputtering of the compound Cu/SiO{sub 2} target in argon ambient. It has been shown that at x < 0.68 the studied samples displayed a hopping mechanism of electron transport, whereas beyond this concentration a metallic-like character of σ(T) along the percolation net of Cu nanoparticles in the silica matrix was observed. Taking into account that at x = 0.68 associated with a much higher percolation threshold relevant to 3D metal–insulator composites (∼0.50), such a behavior can be attributed to the formation of the CuO{sub 2}-based “shells” around the Cu “cores” observed by Raman spectroscopy. The formation of the “shells” is probably due to partial oxidation of Cu nanoparticles during the deposition procedure, resulting from the residual oxygen in a vacuum chamber after its filling with Ar gas.

  18. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    International Nuclear Information System (INIS)

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO2 anatase, TiO2 rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower Icorr than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO2, HA, and Ca5(PO4)2SiO4. • Polarization resistance of the coating was increased by Si substitution in HA

  19. Molecular beam deposition of high-permittivity polydimethylsiloxane for nanometer-thin elastomer films in dielectric actuators

    DEFF Research Database (Denmark)

    M. Weiss, Florian; Madsen, Frederikke Bahrt; Töpper, Tino;

    2016-01-01

    To realize low-voltage dielectric elastomer actuators (DEAs) for artificial muscles, a high-permittivity elastomer and a related thin-film deposition technique must be selected. For polydimethylsiloxane, fillers or functionalized crosslinkers have been incorporated into the elastomer to improve d...

  20. Biomedical bandpass filter for fluorescence microscopy imaging based on TiO2/SiO2 and TiO2/MgF2 dielectric multilayers

    Science.gov (United States)

    Butt, M. A.; Fomchenkov, S. A.; Ullah, A.; Verma, P.; Khonina, S. N.

    2016-08-01

    We report a design for creating a multilayer dielectric optical filters based on TiO2 and SiO2/MgF2 alternating layers. We have selected Titanium dioxide (TiO2) for high refractive index (2.5), Silicon dioxide (SiO2) and Magnesium fluoride (MgF2) as a low refractive index layer (1.45 & 1.37) respectively. Miniaturized visible spectrometers are useful for quick and mobile characterization of biological samples. Such devices can be fabricated by using Fabry-Perot (FP) filters consisting of two highly reflecting mirrors with a central cavity in between. Distributed Bragg Reflectors (DBRs) consisting of alternating high and low refractive index material pairs are the most commonly used mirrors in FP filters, due to their high reflectivity. However, DBRs have high reflectivity for a selected range of wavelengths known as the stopband of the DBR. This range is usually much smaller than the sensitivity range of the spectrometer range. Therefore a bandpass filters are required to restrict wavelength outside the stopband of the FP DBRs. The proposed filter shows a high quality with average transmission of 97.4% within the passbands and the transmission outside the passband is around 4%. Special attention has been given to keep the thickness of the filters within the economic limits. It can be suggested that these filters are exceptional choice for florescence imaging and Endoscope narrow band imaging.

  1. 生物医用钛合金表面离子束辅助沉积氧化钛膜层%Titanium Oxide Layer on Biomedical Titanium Alloy Deposited by Ion Beam Enhanced Deposition

    Institute of Scientific and Technical Information of China (English)

    司红羚; 田林海; 李晓红; 付涛

    2005-01-01

    为改善钛合金(Ti6Al4V)的生物相容性,采用离子束辅助沉积(Ion beam enhanced deposition,IBED)技术制备了氧化钛膜层.结果表明:钛合金上的膜层涂覆均匀,基体的铝和钒元素已经探测不到,膜层为含氮和沿(111)面取向的TiO相;膜层划痕实验的临界载荷为16.8 N,膜层以塑性变形的方式破坏.

  2. Interface controlled growth of nanostructures in discontinuous Ag and Au thin films fabricated by ion beam sputter deposition for plasmonic applications

    Indian Academy of Sciences (India)

    R Brahma; M Ghanashyam Krishna

    2012-08-01

    The growth of discontinuous thin films of Ag and Au by low energy ion beam sputter deposition is reported. The study focuses on the role of the film–substrate in determining the shape and size of nanostructures achieved in such films. Ag films were deposited using Ar ion energy of 150 eV while the Au films were deposited with Ar ion energies of 250–450 eV. Three types of interfaces were investigated in this study. The first set of film–substrate interfaces consisted of Ag and Au films grown on borosilicate glass and carbon coated Cu grids used as substrates. The second set of films was metallic bilayers in which one of the metals (Ag or Au) was grown on a continuous film of the other metal (Au or Ag). The third set of interfaces comprised of discontinuous Ag and Au films deposited on different dielectrics such as SiO2, TiO2 and ZrO2. In each case, a rich variety of nanostructures including self organized arrays of nanoparticles, nanoclusters and nanoneedles have been achieved. The role of the film–substrate interface is discussed within the framework of existing theories of thin film nucleation and growth. Interfacial nanostructuring of thin films is demonstrated to be a viable technique to realize a variety of nanostructures. The use of interfacial nanostructuring for plasmonic applications is demonstrated. It is shown that the surface Plasmon resonance of the metal nanostructures can be tuned over a wide range of wavelengths from 400 to 700 nm by controlling the film–substrate interface.

  3. Charge recombination reduction in dye-sensitized solar cells by means of an electron beam-deposited TiO2 buffer layer between conductive glass and photoelectrode

    International Nuclear Information System (INIS)

    A thin anatase titanium dioxide compact film was deposited by electron beam evaporation as buffer layer between the conductive transparent electrode and the porous TiO2-based photoelectrode in dye-sensitized solar cells. The effect of such a buffer layer on the back transfer reaction of electrons to tri-iodide ions in liquid electrolyte-based cells has been studied by means of both electrochemical impedance spectroscopy and open circuit photovoltage decay analysis. The influence of the thickness has been also investigated and an increment in overall quantum conversion efficiency η as high as + 31% with respect to the standard cell - fabricated onto an uncoated conductive glass - has been revealed in the case of a 120 nm thick buffer layer.

  4. Superconducting YBa sub 2 Cu sub 3 O sub 7 thin films grown in-situ by ion beam CO-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kellett, B.K.; James, J.H.; Gauzzi, A.; Dwir, B.; Pavuna, D. (Inst. of Micro and Optoelectronics, Dept. of Physics, Federal Inst. of Tech., Lausanne (Switzerland))

    1989-12-01

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF{sub 2} and BaCO{sub 3} targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF{sub 2} show fluorine contamination, whereas the carbon concentration in films grown using BaCO{sub 3} is beneath the Auger detection limit. Superconducting films have been grown on SrTiO{sub 3} (T{sub co}=78K) and on Si with SiO{sub 2} or Y{sub 2}O{sub 3} buffer layers (T{sub co}=35K). (orig.).

  5. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho [Department of Periodontology, Research Institute for Periodontal Regeneration, College of Dentistry, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Chung, Sung-Min [Dentium Co., Seoul (Korea, Republic of); Lee, In-Seop, E-mail: shchoi726@yuhs.a [Institute of Physics and Applied Physics, Atomic-scale Surface Science Research Center, Yonsei University, Seoul (Korea, Republic of)

    2009-08-15

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  6. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs.

    Science.gov (United States)

    Yoon, Heun-Joo; Song, Ji-Eun; Um, Yoo-Jung; Chae, Gyung Joon; Chung, Sung-Min; Lee, In-Seop; Jung, Ui-Won; Kim, Chang-Sung; Choi, Seong-Ho

    2009-08-01

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 degrees C and 450 degrees C heat treatment of the coating layer.

  7. Effects of calcium phosphate coating to SLA surface implants by the ion-beam-assisted deposition method on self-contained coronal defect healing in dogs

    International Nuclear Information System (INIS)

    The aim of this study was to evaluate the healing of self-contained coronal defects on a sand-blasted, large-grit, acid-etched (SLA) surface implant, which had a calcium phosphate (CaP) coating applied by ion-beam-assisted deposition (IBAD). We also evaluated the effect of heating the coating to different temperatures. The CaP-coated SLA implants exhibited a slightly larger bone healing capacity in the self-contained coronal defect than SLA implants, indicating that combining SLA surface implants and a CaP coating by the IBAD method had synergistic effects on bone healing. There was no difference in the healing capacity between 350 deg. C and 450 deg. C heat treatment of the coating layer.

  8. Study of effect annealing temperature on the structure, morphology and photocatalytic activity of Si doped TiO{sub 2} thin films deposited by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Lu Zhongdan [Key Lab of Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Xiaolingwei 200, Nanjing 210094 (China); Jiang Xiaohong, E-mail: jiangxh24@mail.njust.edu.cn [Key Lab of Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Xiaolingwei 200, Nanjing 210094 (China); Zhou Bing; Wu Xiaodong; Lu Lude [Key Lab of Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Xiaolingwei 200, Nanjing 210094 (China)

    2011-10-01

    Transparent Si-doped TiO{sub 2} thin films (Si-TiO{sub 2}) were deposited on quartz glasses using electron beam evaporation (EBE) and annealed at different temperature in an air atmosphere. The structure and morphology of these films were analyzed by X-ray diffraction (XRD), Raman microscopy (Raman), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Meanwhile the photocatalytic activity of the films has also been evaluated on the basis of the degradation degree of rhodamine B in aqueous solution. Our experimental results suggest that the annealing temperature impact a strong effect on the structure, morphology and photocatalytic activity of Si-TiO{sub 2} thin films. Furthermore the enhanced thermal stability of Si-TiO{sub 2} films enabled them to elevate the phase transformation temperature of TiO{sub 2} from anatase to rutile and enhanced the photocatalytic efficiency.

  9. 200 MeV Ag15+ ion beam irradiation effects on spray deposited 5 wt% `Li' doped V2O5 thin film

    Science.gov (United States)

    Kovendhan, M.; Joseph, D. Paul; Manimuthu, P.; Sendilkumar, A.; Asokan, K.; Venkateswaran, C.; Mohan, R.

    2016-05-01

    Lithium 5 wt% doped V2O5 thin film was deposited onto ITO substrate by spray pyrolysis technique. The substrate temperature was kept at 450 °C. 200 MeV Ag15+ ion beams at a fluence of 5×1012 ions/cm2 was irradiated on 5 wt% `Li' doped V2O5 film of thickness 1367 nm. The XRD pattern confirms that the pristine film is non stoichiometry with orthorhombic structure and upon irradiation the crystallinity decreased and an obvious textured growth along (020) plane is induced. Raman peak observed at 917 cm-1 is due to oxygen deficiency. Upon irradiation, the optical transparency and band gap of the film decreased. Electrical transport property study shows that the resistivity increased by one order for the irradiated film.

  10. The development of laser chemical vapor deposition and focused ion beam methods for prototype integrated circuit modification

    OpenAIRE

    Remes, J. (Jukka)

    2006-01-01

    Abstract In this work the LCVD of copper and nickel from the precursor gases Cu(hfac)tmvs and Ni(CO)4 has been investigated. The in-house constructed LCVD system and processes and the practical utilisation of these in prototype integrated circuit edit work are described. The investigated process parameters include laser power, laser scan speed, precursor partial pressure and the effect of H2 and He carrier gases. The deposited metal conductor lines have been examined by LIMA, AFM, FIB seco...

  11. Amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope fabricated by low-energy ion beam induced chemical vapor deposition

    Science.gov (United States)

    Matsutani, Takaomi; Yamasaki, Kayo; Imaeda, Norihiro; Kawasaki, Tadahiro

    2015-12-01

    An amorphous silicon carbonitride (a-SiCN) diaphragm for an environmental-cell transmission electron microscope (E-TEM) was fabricated by low-energy ion beam induced chemical vapor deposition (LEIBICVD) with hexamethyldisilazane (HMDSN). The films were prepared by using gaseous HMDSN and N2+ ions with energies ranging from 300 to 600 eV. The diaphragms were applied to Si (1 0 0) and a Cu grid with 100-μm-diameter holes. With increasing ion energy, these diaphragms became perfectly smooth surfaces (RMS = 0.43 nm at 600 eV), as confirmed by atomic force microscopy and TEM. The diaphragms were amorphous and transparent to 200 kV electrons, and no charge-up was observed. Fourier transform infrared spectra and X-ray photoelectron spectra revealed that the elimination of organic compounds and formation of Si-N and C-N bonds can be promoted in diaphragms by increasing the ion impact energy. The resistance to electron beams and reaction gases in the E-cell was improved when the diaphragm was formed with high ion energy.

  12. Effects of Defects in SiO2 Thin Films Prepared on Polyethylene Terephthalate by High-Temperature E-beam Deposition

    Science.gov (United States)

    Han, Jin‑Woo; Kang, Hee‑Jin; Kim, Jong‑Hwan; Seo, Dae‑Shik

    2006-08-01

    In this study, we characterized silicon oxide (SiO2) thin film prepared on polyethylene terephthalate (PET) substrates by electron-beam (e-beam) deposition for transparent barrier application. As the chamber temperature is increased from 30 to 110 °C, the roughness increases while water vapor transmission rate (WVTR) decreases. Under these conditions, WVTR of PET can be reduced from a level of 0.57 g/m2/day (bare subtrate) to 0.05 g/m2/day after application of a 200-nm-thick SiO2 coating at 110 °C. A more efficient way to improve permeation of PET was carried out by using a double sided coating of a 5-μm-thick parylene film. It was found that WVTR for PET substrates can be reduced to a level of -0.2 g/m2/day. The double-sided parylene coating on PET could contribute in lowering the stress of oxide film, which greatly improves the WVTR data. These results indicate that the SiO2/parylene/PET barrier coatings have a high potential for flexible organic light-emitting diode (OLED) applications.

  13. Structural effects due to the incorporation of Ar atoms in the lattice of ZrO sub 2 thin films prepared by ion beam assisted deposition

    CERN Document Server

    Holgado, J P; Veen, A V; Schut, H; Hosson, J T M; González-Elipe, A R

    2002-01-01

    Two sets of ZrO sub 2 thin films have been prepared at room temperature by ion beam induced chemical vapour deposition and subsequently annealed up to 1323 K. The two sets of samples have been prepared by using either O sub 2 sup + or mixtures of (O sub 2 sup + +Ar sup +) ions for the decomposition of a volatile metallorganic precursor of zirconium. The structure and microstructure of these two sets of samples have been determined by means of X-ray diffraction, Fourier transform infrared spectroscopy and positron beam analysis (PBA). The samples were very compact and dense and had a very low-surface roughness. After annealing in air at T>=573 K both sets of films were transparent and showed similar refraction indexes. For the (O sub 2 sup + +Ar sup +)-ZrO sub 2 thin films it is shown by X-ray photoelectron spectroscopy and Rutherford back scattering that a certain amount of incorporated Ar (5-6 at.%) remains incorporated within the oxide lattice. No changes were detected in the amount of incorporated Ar even ...

  14. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    Energy Technology Data Exchange (ETDEWEB)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19

    A high-quality high-κ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high κ dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5 Å to 1 Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high κ dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-κ/Ge interface using the Ge epi-layer approach.

  15. Simulation of dose deposition in heterogeneities in the human body, using the Penelope code for photons beams of energies of a linear accelerator

    International Nuclear Information System (INIS)

    The progress in cancer treatment systems in heterogeneities of human body has had obstacles by the lack of a suitable experimental model test. The only option is to develop simulated theoretical models that have the same properties in interfaces similar to human tissues, to know the radiation behavior in the interaction with these materials. In this paper we used the Monte Carlo method by Penelope code based solely on studies for the cancer treatment as well as for the calibration of beams and their various interactions in mannequins. This paper also aims the construction, simulation and characterization of an equivalent object to the tissues of the human body with various heterogeneities, we will later use to control and plan experientially doses supplied in treating tumors in radiotherapy. To fulfill the objective we study the ionizing radiation and the various processes occurring in the interaction with matter; understanding that to calculate the dose deposited in tissues interfaces (percentage depth dose) must be taken into consideration aspects such as the deposited energy, irradiation fields, density, thickness, tissue sensitivity and other items. (Author)

  16. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States)

    2013-11-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO{sub 2} anatase, TiO{sub 2} rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I{sub corr} than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO{sub 2}, HA, and Ca{sub 5}(PO{sub 4}){sub 2}SiO{sub 4}. • Polarization resistance of the coating was increased by Si substitution in HA.

  17. Quantitative plasma-fuel and impurity profiling in thick plasma-deposited layers by means of micro ion beam analysis and SIMS

    Energy Technology Data Exchange (ETDEWEB)

    Bykov, Igor, E-mail: igor.bykov@ee.kth.se [Fusion Pasma Physics, Royal Institute of Technology (KTH), Teknikringen 31, Stockholm 10044 (Sweden); Bergsåker, Henric; Petersson, Per [Fusion Pasma Physics, Royal Institute of Technology (KTH), Teknikringen 31, Stockholm 10044 (Sweden); Likonen, Jari [VTT, Association EURATOM-TEKES, P.O. Box 1000, Otaniemi 02044 (Finland); Possnert, Göran [Tandem Laboratory (Association EURATOM-VR), Uppsala Universitet, Box 256, Uppsala 75105 (Sweden)

    2014-08-01

    The operation of the Joint European Torus (JET) with full-carbon wall during the last decades has proven the importance of material re-deposition processes in remote areas of the tokamak. The thickness of the deposits in shadowed areas can reach 1 mm. The main constituent is carbon, with little inclusion of Inconel components. Atomic fractions Be/C and D/C can locally reach 1. Three methods were used to study thick deposits on JET divertor surfaces: (i) NRA analysis with a 15 μm wide, 3 MeV {sup 3}He ion microbeam on a polished cross section of the layer to determine the concentration distribution of D, Be and C and the distribution of Ni by particle induced X-ray emission; (ii) elastic proton scattering (EPS) from the top of the layers with a broad proton beam at 3.5 and 4.6 MeV. These methods were absolutely calibrated using thick elemental targets. (iii) Depth profiling of D, Be and Ni was done with secondary ion mass spectrometry (SIMS), sputtering the layers from the surface. The three methods are complementary. The thickest layers are accessible only by microbeam mapping of the cross sections, albeit with limited spatial resolution. The SIMS has the best depth resolution, but is difficult for absolute quantification and is limited in accessible depth. The probed depth with proton backscattering is limited to about 30 μm. The combination of all three methods provided a coherent picture of the layer composition. It was possible to correlate the SIMS profiling results to quantitative data obtained by the microbeam method.

  18. Damage evolution in an electron beam physical vapor deposited thermal barrier coating as a function of cycle temperature and time

    Energy Technology Data Exchange (ETDEWEB)

    Sridharan, Swetha [Department of Metallurgy and Materials Engineering, University of Connecticut, Storrs, CT 06269 (United States); Xie, Liangde [Department of Metallurgy and Materials Engineering, University of Connecticut, Storrs, CT 06269 (United States); Jordan, Eric H. [Department of Mechanical Engineering, University of Connecticut, 191 Auditorium Road, Storrs, CT 06269 (United States)]. E-mail: jordan@engr.uconn.edu; Gell, Maurice [Department of Metallurgy and Materials Engineering, University of Connecticut, Storrs, CT 06269 (United States); Murphy, K.S. [Howmet Research Corporation, Howmet Castings, Whitehall, MI 49461 (United States)

    2005-02-25

    Failure of thermal barrier coatings (TBCs) deposited on a single-crystal superalloy with a grit-blasted platinum modified nickel aluminide [{beta}-(Ni, Pt) Al] bond coat has been studied as a function of thermal cycling temperature and time. One-hour cyclic furnace tests were conducted at 1100 deg. C, 1121 deg. C and 1151 deg. C, and 24-h tests were run at 1121 deg. C. It was found that all the samples tested in the 1-h cycle failed in the TBC, near the TBC/TGO interface, due to progressive cracking beginning at {approx}20% life fraction. In contrast, the 24-h cyclic test samples failed at the TGO/bond coat interface. Thus, a life prediction for this TBC will ultimately require the use of two independent damage mechanisms and failure will be predicted on the basis of whichever occurs first during the TBC cyclic life. A single-valued relation was found between the rumpling amplitudes and the oxide thickness, independent of temperature and cycle time, consistent with oxidation being rate controlling.

  19. Microstructural characterization of Ti-C-N thin films prepared by reactive crossed beam pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Escobar-Alarcon, L., E-mail: luis.escobar@inin.gob.mx [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Medina, V.; Camps, Enrique; Romero, S. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Fernandez, M. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Solis-Casados, D. [Centro Conjunto de Investigacion en Quimica Sustentable, Facultad de Quimica UAEMex, km. 14.5 carr. Toluca-Atlacomulco (Mexico)

    2011-08-15

    In this work, Raman spectroscopy has been used to characterize Ti-C-N thin films in order to obtain information about the microstructure of the deposited materials, and in particular to study the effects due to the carbon incorporation into the TiN lattice. Ti-C-N thin films were prepared using a crossed plasma configuration in which the ablation of two different targets, titanium and carbon, in a reactive atmosphere was performed. With this configuration, the carbon content in the films was varied in an easy way from 5.0 at% to 40.0 at%. Thin film composition was determined from Non-Rutherford Backscattering Spectroscopy (NRBS) measurements. X-ray photoelectron spectroscopy and X-Ray diffraction measurements were also carried out in order to characterize the films in more detail, with this being used to give support to the interpretation of the Raman spectra. The Raman results revealed that at lower carbon concentrations a solid solution Ti(C, N) is formed, whilst at higher carbon concentrations a nanocomposite, consisting of nanocrystalline TiCN and TiC immersed in an amorphous carbon matrix is obtained.

  20. Core and grain boundary sensitivity of tungsten-oxide sensor devices by molecular beam assisted particle deposition

    Science.gov (United States)

    Huelser, T. P.; Lorke, A.; Ifeacho, P.; Wiggers, H.; Schulz, C.

    2007-12-01

    In this study, we investigate the synthesis of WO3 and WOx (2.6≥x≤2.8) by adding different concentrations of tungsten hexafluoride (WF6) into a H2/O2/Ar premixed flame within a low-pressure reactor equipped with a particle-mass spectrometer (PMS). The PMS results show that mean particle diameters dp between 5 and 9 nm of the as-synthesized metal-oxides can be obtained by varying the residence time and precursor concentration in the reactor. This result is further validated by N2 adsorption measurements on the particle surface, which yielded a 91 m2/g surface area, corresponding to a spherical particle diameter of 9 nm (Brunauer-Emmett-Teller technique). H2/O2 ratios of 1.6 and 0.63 are selected to influence the stoichiometry of the powders, resulting in blue-colored WOx and white WO3 respectively. X-ray diffraction (XRD) analysis of the as-synthesized materials indicates that the powders are mostly amorphous, and the observed broad reflexes can be attributed to the orthorhombic structure of β-WO3. Thermal annealing at 973 K for 3 h in air resulted in crystalline WO3 comprised of both monoclinic and orthorhombic phases. The transmission electron microscope micrograph analysis shows that the particles exhibit spherical morphology with some degree of agglomeration. Impedance spectroscopy is used for the electrical characterization of tungsten-oxide thin films with a thickness of 50 nm. Furthermore, the temperature-dependent gas-sensing properties of the material deposited on interdigital capacitors are investigated. Sensitivity experiments reveal two contributions to the overall sensitivity, which result from the surface and the core of each particle.

  1. Composite films prepared by plasma ion-assisted deposition (IAD) for design and fabrication of antireflection coatings in visible and near-infrared spectral regions

    Science.gov (United States)

    Tsai, Rung-Ywan; Ho, Fang C.

    1994-11-01

    Ion-assisted deposition (IAD) processes configured with a well-controlled plasma source at the center base of a vacuum chamber, which accommodates two independent e-gun sources, is used to deposition TiO2MgF2 and TiO2-SiO2 composite films of selected component ratios. Films prepared by this technology are found durable, uniform, and nonabsorbing in visible and near-IR regions. Single- and multilayer antireflection coatings with refractive index from 1.38 to 2.36 at (lambda) equals 550 nm are presented. Methods of enhancement in optical performance of these coatings are studied. The advantages of AR coatings formed by TiO2-MgF2 composite films over those similar systems consisting of TiO2-SiO2 composite films in both visible and near-IR regions are also presented.

  2. Epitaxial Bi3Fe5O12(001) films grown by pulsed laser deposition and reactive ion beam sputtering techniques

    Science.gov (United States)

    Adachi, N.; Denysenkov, V. P.; Khartsev, S. I.; Grishin, A. M.; Okuda, T.

    2000-09-01

    We report on processing and comparative characterization of epitaxial Bi3Fe5O12 (BIG) films grown onto Gd3(ScGa)5O12[GSGG,(001)] single crystal using pulsed laser deposition (PLD) and reactive ion beam sputtering (RIBS) techniques. A very high deposition rate of about 0.8 μm/h has been achieved in the PLD process. Comprehensive x-ray diffraction analyses reveal epitaxial quality both of the films: they are single phase, exclusively (001) oriented, the full width at half maximum of the rocking curve of (004) Bragg reflection is 0.06 deg for PLD and 0.05 deg for RIBS film, strongly in-plane textured with cube-on-cube film-to-substrate epitaxial relationship. Saturation magnetization 4πMs and Faraday rotation at 635 nm were found to be 1400 Gs and -7.8 deg/μm in PLD-BIG, and 1200 Gs and -6.9 deg/μm in RIBS-BIG. Ferromagnetic resonance (FMR) measurements performed at 9.25 GHz yielded the gyromagnetic ratio γ=1.797×107l/s Oe, 1.826×107 l/s Oe; the constants of uniaxial magnetic anisotropy were Ku*=-8.66×104erg/cm3, -8.60×104 erg/cm3; the cubic magnetic anisotropy K1=-2.7×103 erg/cm3,-3.8×103 erg/cm3; and the FMR linewidth ΔH=25 and 34 Oe for PLD and RIBS films correspondingly. High Faraday rotation, low microwave loss, and low coercive field ⩽40 Oe of BIG/GSGG(001) films promise their use in integrated magneto-optic applications.

  3. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

    Science.gov (United States)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  4. Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Bo; LI Gong-Ping; CHEN Xi-Meng; CHO Seong-Jin; KIM Hee

    2008-01-01

    @@ The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique.The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃and 500℃ are 8.5 × 10-15 cm2.s-1 and 3.0 × 10-14 cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 × 10-16 cm2.s-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.

  5. Optimization of TiO2/Cu/TiO2 multilayers as a transparent composite electrode deposited by electron-beam evaporation at room temperature

    Institute of Scientific and Technical Information of China (English)

    孙洪涛; 王小平; 寇志起; 王丽军; 王金烨; 孙义清

    2015-01-01

    Highly transparent indium-free composite electrodes of TiO2/Cu/TiO2 are deposited by electron-beam evaporation at room temperature. The effects of Cu thickness and annealing temperature on the electrical and optical properties of the multilayer film are investigated. The critical thickness of Cu mid-layer to form a continuous conducting layer is found to be 11 nm. The multilayer with a mid-Cu thickness of 11 nm is optimized to obtain a resistivity of 7.4×10−5 Ω·cm and an average optical transmittance of 86%in the visible spectral range. The figure of merit of the TiO2/Cu(11 nm)/TiO2 multilayer annealed at 150 ◦C reaches a minimum resistivity of 5.9×10−5 Ω·cm and an average optical transmittance of 88%in the visible spectral range. The experimental results indicate that TiO2/Cu/TiO2 multilayers can be used as a transparent electrode for solar cell and other display applications.

  6. Optical constants of e-beam-deposited zirconium dioxide measured in the 55-150 Å wavelength region using the reflectivity technique.

    Science.gov (United States)

    Singh, Amol; Sinha, Mangalika; Gupta, R K; Modi, Mohammed H

    2016-04-20

    In the present study, optical constants of e-beam-deposited zirconium dioxide (ZrO2) thin film are determined in the 55-150 Å soft x-ray wavelength region using the angle-dependent reflectivity technique. Soft x-ray reflectivity measurements are carried out using the reflectivity beamline at the Indus-1 synchrotron radiation source. Derived optical constants (δ and β) are compared with the tabulated values of Henke et al. [http://henke.lbl.gov/optical_constants/asf.html]. It is found that the measured δ values are consistently lower than the tabulated bulk values in the 70-150 Å wavelength region. In this region, the delta values are lower by 19%-24% from the tabulated data. Below the Zr M4 edge (66.3 Å), a deviation in delta values is found as ∼2%-21%. These changes are attributed to growth-related defects (oxygen and voids) and variation in film stoichiometry. To the best of our knowledge, the present study gives the first reported experimental values of optical constants for ZrO2 in the 55-150 Å wavelength region. PMID:27140084

  7. A photoluminescence comparison of CdTe thin films grown by molecular-beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuum

    Science.gov (United States)

    Feng, Z. C.; Bevan, M. J.; Krishnaswamy, S. V.; Choyke, W. J.

    1988-09-01

    High perfection CdTe thin films have been grown on (001) InSb and CdTe substrates by molecular-beam epitaxy, metalorganic chemical vapor deposition (MOCVD), and sputtering in ultrahigh vacuum techniques. The quality of the as-grown CdTe films are characterized by 2-K photoluminescence. The spectra show strong and sharp exciton transitions and weak 1.40-1.50-eV defect-related bands. Radiative defect densities of lower than 0.002 are realized. High-resolution spectroscopy shows that the full width at half maximum of the principal bound exciton lines is about 0.1 meV. Such small ρ values and narrow photoluminescence lines have not been previously reported. The largest luminescence efficiency is observed for MOCVD-CdTe films grown on CdTe substrates. A variety of impurities appear to be responsible for the observed radiative transitions in these three kinds of CdTe films. We attempt to assign the observed impurity related lines by a comparison with ``known'' impurities in bulk CdTe spectra given in the literature.

  8. Influences of oxygen partial pressure on structure and related properties of ZrO2 thin films prepared by electron beam evaporation deposition

    International Nuclear Information System (INIS)

    ZrO2 thin films were prepared by electron beam evaporation at different oxygen partial pressures. The influences of oxygen partial pressure on structure and related properties of ZrO2 thin films were studied. Transmittance, thermal absorption, structure and residual stress of ZrO2 thin films were measured by spectrophotometer, surface thermal lensing technique (STL), X-ray diffraction and optical interferometer, respectively. The results showed that the structure and related properties varied progressively with the increase of oxygen partial pressure. The refractive indices and the packing densities of the thin films decreased when the oxygen partial pressure increased. The tetragonal phase fraction in the thin films decreased gradually as oxygen partial pressure increased. The residual stress of film deposited at base pressure was high compressive stress, the value decreased with the increase of oxygen partial pressure, and the residual stress became tensile with the further increase of oxygen pressure, which was corresponding to the evolution of packing densities and variation of interplanar distances

  9. Influence of the shape and surface oxidation in the magnetization reversal of thin iron nanowires grown by focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Luis A. Rodríguez

    2015-06-01

    Full Text Available Iron nanostructures grown by focused electron beam induced deposition (FEBID are promising for applications in magnetic sensing, storage and logic. Such applications require a precise design and determination of the coercive field (HC, which depends on the shape of the nanostructure. In the present work, we have used the Fe2(CO9 precursor to grow iron nanowires by FEBID in the thickness range from 10 to 45 nm and width range from 50 to 500 nm. These nanowires exhibit an Fe content between 80 and 85%, thus giving a high ferromagnetic signal. Magneto-optical Kerr characterization indicates that HC decreases for increasing thickness and width, providing a route to control the magnetization reversal field through the modification of the nanowire dimensions. Transmission electron microscopy experiments indicate that these wires have a bell-type shape with a surface oxide layer of about 5 nm. Such features are decisive in the actual value of HC as micromagnetic simulations demonstrate. These results will help to make appropriate designs of magnetic nanowires grown by FEBID.

  10. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    International Nuclear Information System (INIS)

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  11. Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

    International Nuclear Information System (INIS)

    We report the study of high-dielectric-constant (high-κ) dielectric LaLuO3 (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin (∼2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 ± 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal a high effective dielectric constant of ∼28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.

  12. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  13. Effect of discharge current and deposition temperature on roughness and density of NbC films fabricated by ion beam sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Dhawan, Rajnish, E-mail: rajnish@rrcat.gov.in; Rai, Sanjay, E-mail: rajnish@rrcat.gov.in; Lodha, G. S., E-mail: rajnish@rrcat.gov.in [X-ray optics Section, Indus Synchrotron Utilization Division, Raja Ramanna Center for Advanced Technology, Indore-452013 (India)

    2014-04-24

    NbC films were prepared using Ion beam sputtering system at various discharges current from 0.4 amps to 1.2 amps at room temperature. Effect of temperature on NbC films were also studied by depositing NbC films at various temperatures from room temperature to 200,300,400 and 600°C. X-ray reflectivity (XRR) study shows that surface roughness of the film decreases with decrease in discharge current. The optimum lowest roughness 3.2Å having density 92% of bulk was achieved at discharge current 0.6 amps at 3.0 cm{sup 3}/min Ar gas flow. X-ray study also shows that film roughness decreases with increase in temperature of the film and after a certain temperature it increases with increase in temperature. The lowest surface roughness 2.1Å was achieved at 300°C with density 83% of bulk NbC at constant discharge current 0.6 amps.

  14. Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition

    International Nuclear Information System (INIS)

    Ti films with a thickness of 1.6 μm (group A) and 4.6 μm (group B) were prepared on surface of silicon crystal by metal vapor vacuum arc (MEVVA) ion implantation combined with ion beam assisted deposition (IBAD). Different anneal temperatures ranging from 100 to 500 deg. C were used to investigate effect of temperature on residual stress and mechanical properties of the Ti films. X-ray diffraction (XRD) was used to measure residual stress of the Ti films. The morphology, depth profile, roughness, nanohardness, and modulus of the Ti films were measured by scanning electron microscopy (SEM), scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindentation, respectively. The experimental results suggest that residual stress was sensitive to film thickness and anneal temperature. The critical temperatures of the sample groups A and B that residual stress changed from compressive to tensile were 404 and 428 deg. C, respectively. The mean surface roughness and grain size of the annealed Ti films increased with increasing anneal temperature. The values of nanohardness and modulus of the Ti films reached their maximum values near the surface, then, reached corresponding values with increasing depth of the indentation. The mechanism of stress relaxation of the Ti films is discussed in terms of re-crystallization and difference of coefficient of thermal expansion between Ti film and Si substrate.

  15. Beam-Beam Effects

    CERN Document Server

    Herr, W

    2014-01-01

    One of the most severe limitations in high-intensity particle colliders is the beam-beam interaction, i.e. the perturbation of the beams as they cross the opposing beams. This introduction to beam-beam effects concentrates on a description of the phenomena that are present in modern colliding beam facilities.

  16. The Research of UV-Responsive Sensitivity Enhancement of Fluorescent Coating Films by MgF2 Layer%MgF2薄膜对荧光薄膜紫外响应灵敏度的增强特性研究

    Institute of Scientific and Technical Information of China (English)

    卢忠荣; 倪争技; 陶春先; 洪瑞金; 张大伟; 黄元申

    2014-01-01

    在光敏面上镀制荧光薄膜将紫外光转变为可见光,是提高CCD和CMOS图像传感器紫外响应灵敏度的一种有效方法。针对荧光薄膜入射界面的散射和反射损耗降低荧光发光强度的分析,研究在荧光薄膜上镀制增透膜和阻隔膜的灵敏度增强特性。采用真空热阻蒸发的镀膜方法分别制备了单层Lumogen荧光薄膜和MgF2/Lumogen复合膜。利用原子力显微镜,紫外可见近红外分光光度计,荧光光谱仪对两种样品的表面粗糙度,漫反射和透射光谱以及荧光发光光谱分别进行对比测试分析。结果表明:M g F2保护层降低了表面粗糙度,减小了入射界面的漫反射损耗,对500~700 nm的可见波段具有明显增透作用,也增强了Lumogen薄膜对紫外波段受激发射的荧光强度;同时,MgF2薄膜的抗损伤及水汽隔离性能对荧光薄膜紫外响应能力具有保护作用,为延长紫外CCD薄膜及器件的工作寿命提供了有效手段。%A low cost and less complicated expansion approach of wavelength responses with a Lumogen phosphor coating was adopted ,as they increased the quantum efficiency of CCD and CMOS detectors in ultra-violet by absorbing UV light and then re-emitting visible light .In this paper ,the sensitivity enhancement of fluorescence coatings was studied by adding an anti-reflection film or barrier film to reduce the loss of the scattering and reflection on the incident interface .The Lumogen and MgF2/Lumogen film were deposited on quartz glasses by physical vacuum deposition .The surface morphology ,transmittance spectrum ,reflec-tance spectrum and fluorescence emission spectrum were obtained by atomic force microscope (AFM ) ,spectrophotometer and fluorescence spectrometer ,respectively .The results indicated that MgF2 film had obvious positive effect on reducing scattering and reflection loss in 500~700 nm ,and enhancing the absorption of Lumogen coating in ultraviolet

  17. 镁合金化学镀镍层的生长过程%Deposition process of electroless nickel plating on magnesium alloy

    Institute of Scientific and Technical Information of China (English)

    邵忠财; 李建中; 康凤娣; 田彦文

    2005-01-01

    The initial nickel deposition for the direct electroless nickel plating on non-catalytically active magnesium alloy is critical. The surface morphology and composition of the initial nickel plating coating are obtained by means of the scanning electron microscopy (SEM) and the energy dispersive X-ray (EDS). In addition, the mass gain/loss in the initial nickel deposition process was measured by using the electrobalance. The results showed that the MgO coating was gradually corroded by the plating solution, at the same time, MgF2 produced by F , H+ and MgO was deposited on the substrate during the initial electroless plating process. The nickel of the initial electroless plating was mostly growing on the boundary between the MgF2 coating and the MgO coating of the activation substrate, and then came to two sides. After that, the Ni-P coating growth rate to cover with the MgF2 coating was prior to the MgO coating. The electroless plating was in company with the substrate corrosion, but the electroless plating rate catalyzed by the exchanged nickel was more than the substrate corrosion rate.

  18. Correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering

    OpenAIRE

    Kittl, J. A.; Nieh, C. W.; Lee, D.S.; Johnson, W. L.

    1990-01-01

    We have studied the correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering. Epitaxial, c-axis oriented YBa2Cu3O7–delta films were grown both on (100) SrTiO3 and on (100) MgO substrates following the stacking sequence of the ``123'' compound, with deposited layer thicknesses nominally equal to 1 monolayer. The c-axis lattice parameters obtained were larger than the corresponding lattice p...

  19. Ion-beam technologies

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, G.R. [Argonne National Lab., IL (United States)

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  20. Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

    Energy Technology Data Exchange (ETDEWEB)

    Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

    2006-07-01

    The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

  1. Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling.

    Science.gov (United States)

    Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Szeghalmi, Adriana; Knez, Mato; Weigand, Markus; Snigirev, Anatoly; Snigireva, Irina; Schütz, Gisela

    2013-05-01

    Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ~10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling, FZPs with very high aspect ratios were prepared. Such multilayer FZPs with outermost zone widths of 10 and 35 nm and aspect ratios of up to 243 were tested for their focusing properties at 8 keV and shown to focus hard X-rays efficiently. This success was enabled by the outstanding layer quality thanks to ALD. Via the use of FIB for slicing the multilayer structures, desired aspect ratios could be obtained by precisely controlling the thickness. Experimental diffraction efficiencies of multilayer FZPs fabricated via this combination reached up to 15.58% at 8 keV. In addition, scanning transmission X-ray microscopy experiments at 1.5 keV were carried out using one of the multilayer FZPs and resolved a 60 nm feature size. Finally, the prospective of different material combinations with various outermost zone widths at 8 and 17 keV is discussed in the light of the coupled wave theory and the thin-grating approximation. Al2O3/Ir is outlined as a promising future material candidate for extremely high resolution with a theoretical efficiency of more than 20% for as small an outermost zone width as 10 nm at 17 keV. PMID:23592622

  2. Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling.

    Science.gov (United States)

    Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Szeghalmi, Adriana; Knez, Mato; Weigand, Markus; Snigirev, Anatoly; Snigireva, Irina; Schütz, Gisela

    2013-05-01

    Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ~10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling, FZPs with very high aspect ratios were prepared. Such multilayer FZPs with outermost zone widths of 10 and 35 nm and aspect ratios of up to 243 were tested for their focusing properties at 8 keV and shown to focus hard X-rays efficiently. This success was enabled by the outstanding layer quality thanks to ALD. Via the use of FIB for slicing the multilayer structures, desired aspect ratios could be obtained by precisely controlling the thickness. Experimental diffraction efficiencies of multilayer FZPs fabricated via this combination reached up to 15.58% at 8 keV. In addition, scanning transmission X-ray microscopy experiments at 1.5 keV were carried out using one of the multilayer FZPs and resolved a 60 nm feature size. Finally, the prospective of different material combinations with various outermost zone widths at 8 and 17 keV is discussed in the light of the coupled wave theory and the thin-grating approximation. Al2O3/Ir is outlined as a promising future material candidate for extremely high resolution with a theoretical efficiency of more than 20% for as small an outermost zone width as 10 nm at 17 keV.

  3. Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne, E-mail: grevent@is.mpg.de [Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Szeghalmi, Adriana [Friedrich-Schiller-Universität Jena, Albert-Einstein-Strasse 15, D-07745 Jena (Germany); Knez, Mato [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, E-20018 Donostia-San Sebastian (Spain); Basque Foundation for Science, Alameda Urquijo 36-5, E-48011 Bilbao (Spain); Weigand, Markus [Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Snigirev, Anatoly; Snigireva, Irina [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, BP 220, F-38043 Grenoble (France); Schütz, Gisela [Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart (Germany)

    2013-05-01

    The fabrication and performance of multilayer Al{sub 2}O{sub 3}/Ta{sub 2}O{sub 5} Fresnel zone plates in the hard X-ray range and a discussion of possible future developments considering available materials are reported. Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ∼10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling, FZPs with very high aspect ratios were prepared. Such multilayer FZPs with outermost zone widths of 10 and 35 nm and aspect ratios of up to 243 were tested for their focusing properties at 8 keV and shown to focus hard X-rays efficiently. This success was enabled by the outstanding layer quality thanks to ALD. Via the use of FIB for slicing the multilayer structures, desired aspect ratios could be obtained by precisely controlling the thickness. Experimental diffraction efficiencies of multilayer FZPs fabricated via this combination reached up to 15.58% at 8 keV. In addition, scanning transmission X-ray microscopy experiments at 1.5 keV were carried out using one of the multilayer FZPs and resolved a 60 nm feature size. Finally, the prospective of different material combinations with various outermost zone widths at 8 and 17 keV is discussed in the light of the coupled wave theory and the thin-grating approximation. Al{sub 2}O{sub 3}/Ir is outlined as a promising future material candidate for extremely high resolution with a theoretical efficiency of more than 20% for as small an outermost zone width as 10 nm at 17 keV.

  4. Comparison of the dose deposited between the OBI system and the Varian TrueBeam Imaging system; Comparacion de la dosis depositada entre el sistem OBI y el truebeam Imaging system de Varian

    Energy Technology Data Exchange (ETDEWEB)

    Pino, F.; Navarro, D.; Sancho, I.; Lizuain, M. C.

    2011-07-01

    The use of imaging systems for positioning kilovoltage radiotherapy treatments has experienced a peak in recent years. Techniques such as IMRT, these systems are applied to a large number of sessions to ensure accurate positioning. This makes it increased the interest to know the dose deposited in the patient. Companies involved in developing new designs focus their efforts on reducing the dose due to these positioning systems. The aim of this study is to compare the dose delivered by the OBI image guidance system with the new system image TrueBeam, both of Varian, both planar imaging as CT (CBCT).

  5. Beam-beam effects

    Energy Technology Data Exchange (ETDEWEB)

    Zholents, A.

    1994-12-01

    The term beam-beam effects is usually used to designate different phenomena associated with interactions of counter-rotating beams in storage rings. Typically, the authors speak about beam-beam effects when such interactions lead to an increase of the beam core size or to a reduction of the beam lifetime or to a growth of particle`s population in the beam halo and a correspondent increase of the background. Although observations of beam-beam effects are very similar in most storage rings, it is very likely that every particular case is largely unique and machine-dependent. This constitutes one of the problems in studying the beam-beam effects, because the experimental results are often obtained without characterizing a machine at the time of the experiment. Such machine parameters as a dynamic aperture, tune dependencies on amplitude of particle oscillations and energy, betatron phase advance between the interaction points and some others are not well known, thus making later analysis uncertain. The authors begin their discussion with demonstrations that beam-beam effects are closely related to non linear resonances. Then, they will show that a non linearity of the space charge field is responsible for the excitation of these resonances. After that, they will consider how beam-beam effects could be intensified by machine imperfections. Then, they will discuss a leading mechanism for the formation of the beam halo and will describe a new technique for beam tails and lifetime simulations. They will finish with a brief discussion of the coherent beam-beam effects.

  6. Ferroelectric and ferromagnetic properties of epitaxial BiFeO{sub 3}-BiMnO{sub 3} films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, J., E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States); Matias, V.; Jia, Q. X. [Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States); Tao, B. W.; Li, Y. R. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2014-05-07

    Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature.

  7. Calculation of energy deposited and stopping range through deuterium ignition beam and dynamical studies on the energy gain in D-3He mixtures

    OpenAIRE

    Hosseinimotlagh, S. N.; Jahedi, M.; Kianafraz, S.; Ghaderi, Sakineh

    2015-01-01

    The fast ignition approach to ICF consists in first compressing the fuel to high density by a suitable driver and then creating the hot spot required for ignition by means of a second external pulse. If the ignition beam is composed of deuterons, an additional energy is delivered to the target with increased energy gain. Therefore ,in this innovative suggestion ,we consider deuterium  beams for fast ignition in D+3He mixture and solve the dynamical  balance equations under the available  physi...

  8. Denton E-beam Evaporator #1

    Data.gov (United States)

    Federal Laboratory Consortium — Description: CORAL Name: E-Beam Evap 1 This is a dual e-beam/thermal evaporator for the deposition of metal and dielectric thin films. Materials available are: Ag,...

  9. The Effects of Annealing and Discharging on the Characteristics of MgO Thin Films Prepared by Ion Beam-Assisted Deposition as a Protective Layer of AC-PDP

    Institute of Scientific and Technical Information of China (English)

    YU Zhinong; SUN Jian; XUE Wei; ZHENG Dexiu

    2007-01-01

    This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 °C for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the (200)-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation. The failure mechanism of the (200)-oriented MgO films was due to the compressive stress of MgO films plus the additional compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM(atomic force microscopy) images show that the eroded surface of the (200)-oriented MgO thin film is smoother than that of the (lll)-oriented film. Also, the (200)-oriented MgO thin film shows an improved ability to resist ion erosion compared to the (lll)-oriented film.

  10. Friction and wear study of diamond-like carbon gradient coatings on Ti6Al4V substrate prepared by plasma source ion implant-ion beam enhanced deposition

    International Nuclear Information System (INIS)

    DLC gradient coatings had been deposited on Ti6Al4V alloy substrate by plasma source ion implantation-ion beam enhanced deposition method and their friction and wear behavior sliding against ultra high molecular weight polyethylene counterpart were investigated. The results showed that DLC gradient coated Ti6Al4V had low friction coefficient, which reduced 24, 14 and 10% compared with non-coated Ti6Al4V alloy under dry sliding, lubrication of bovine serum and 0.9% NaCl solution, respectively. DLC gradient coated Ti6Al4V showed significantly improved wear resistance, the wear rate was about half of non-coated Ti6Al4V alloy. The wear of ultra high molecular weight polyethylene counterpart was also reduced. High adhesion to Ti6Al4V substrate of DLC gradient coatings and surface structure played important roles in improved tribological performance, serious oxidative wear was eliminated when DLC gradient coating was applied to the Ti6Al4V alloy

  11. Correlations between deposition parameters and structural and electrical properties of YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films grown in situ by sequential ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kittl, J.A.; Nieh, C.W.; Lee, D.S.; Johnson, W.L. (W. M. Keck Laboratory of Engineering Materials, California Institute of Technology, Pasadena, California 91125 (US))

    1990-06-11

    We have studied the correlations between deposition parameters and structural and electrical properties of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films grown {ital in} {ital situ} by sequential ion beam sputtering. Epitaxial, {ital c}-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films were grown both on (100) SrTiO{sub 3} and on (100) MgO substrates following the stacking sequence of the 123'' compound, with deposited layer thicknesses nominally equal to 1 monolayer. The {ital c}-axis lattice parameters obtained were larger than the corresponding lattice parameter in bulk samples, even after low-temperature anneals in O{sub 2}. The transition temperatures were found to decrease with the enlargement of the {ital c}-axis lattice parameter. A clear correlation between growth temperature and the value of the {ital c}-axis lattice parameter was observed. The {ital c}-axis lattice parameter and the x-ray linewidth of Bragg reflections with the {bold G} vector along the {ital c}-axis were also found to be correlated. This suggests a relationship between the {ital c}-axis lattice parameter and the structural coherence of the epitaxial films.

  12. SEDIMENTARY FEATURES OF TSUNAMI BACKWASH DEPOSITS AS ASSESSED BY MICRO-BEAM SYNCHROTRON X-RAY FLUORESCENCE (μ-SXRF AT THE SIAM PHOTON LABORATORY

    Directory of Open Access Journals (Sweden)

    Siwatt Pongpiachan

    2013-01-01

    Full Text Available Over the past few years, several attempts have been performed to find alternative “chemical proxies” in order to discriminate “tsunami backwash deposits” from “typical marine sediments”. A wide range of statistical tools has been selected in order to investigate the sediments and/or terrestrial soils transportation mechanism during the tsunami inundation period by using several types of chemical tracers. To relate the physical and chemical characteristics of Typical Marine Sediments (TMS,Tsunami Backwash Deposits (TBD, Onshore Tsunami Deposits (OTD and Coastal Zone Soils (CZS with their synchrotron radiation based micro-X-ray Fluorescence (μ-SXRF spectra, the μ- SXRF spectra were built in the appropriate selected spectra range from 3,000 eV to 8,000 eV. Further challenges were considered by using the first-order derivative μ-SXRF spectra coupled with Probability Distribution Function (PDF, Hierarchical Cluster Analysis (HCA and Principal Component Analysis (PCA in order to investigate the elemental distribution characteristics in various types of terrestrial soils and marine sediments. Dendrographic classifications and multi-dimensional plots of principal components (i.e. bi-polar and three dimensional plots could indicate the impacts of terrestrial soils and/or marine sediments transport on onshore and/or offshore during the tsunami inundation period. Obviously, these advanced statistical analyses are quite useful and provide valuable information and thus shed new light on the study of paleotsunami.

  13. Estimation of the spatial energy deposition in CA1 pyramidal neurons under exposure to 12C and 56Fe ion beams

    Directory of Open Access Journals (Sweden)

    Munkhbaatar Batmunkh

    2015-10-01

    Full Text Available The exposure to heavy charged particles represents a significant risk to the central nervous system. In experiments with rodents, the irradiation with heavy ions induces a prolonged deficit in hippocampus-dependent learning and memory. The exact nature of these violations remains mostly unclear. In this regard, the estimation of radiation effects at the level of single neurons is of our special interest. The present study demonstrates the results of comparative calculations that are performed to clarify the early physical events in single neurons under the exposure to accelerated 12C and 56Fe ions with different parameters. Using the Geant4-based Monte Carlo simulations, the radiation effects are considered in terms of energy and dose deposition. The spatial patterns of energy and dose depositions within a single neural cell are produced. As additional characteristics, the spectra of the specific energy and energy imparted are estimated. Our results show that the cell morphology is an important factor determining the accumulation of radiation dose in neurons under the exposure to heavy ions. The data obtained suggest a possibility of radiation damage to synapses that are considered to play an important role in radiation-induced violations of hippocampus-dependent learning and memory.

  14. 电子束热蒸发非晶硅薄膜红外光学特性%Infrared optical properties of amorphous silicon films deposited by electron beam evaporation

    Institute of Scientific and Technical Information of China (English)

    潘永强; 黄国俊

    2011-01-01

    采用Ar+离子束辅助电子束热蒸发技术制备非晶硅(a-Si)薄膜,利用正交实验研究了薄膜红外光学常数与工艺参数之间的关系.采用椭偏仪和分光光度计分析了薄膜沉积速率、基底温度和工作真空度对非晶硅薄膜的折射率和消光系数的影响.实验结果表明:影响a-Si薄膜光学特性的主要因素是沉积速率和基底温度,工作真空度的影响最小.随着沉积速率和烘烤温度的升高,a-Si薄膜的折射率先增大后减小;工作真空度越高,薄膜的折射率越大.a-Si薄膜在波长1~5 μm之间,折射率变化范围为2.65~3.38.当沉积速率为0.6 nm/s、基底温为120℃、工作真空度是1.0×10-2Pa时,获得的a-Si薄膜的光学特性比较好,在3 μm处薄膜的折射率为2.87,消光系数仅为1.67×10-5.%The amorphous silicon (a-Si) films were prepared by electron beam evaporation and Ar+ ion beam assisted deposition. The orthogonal experimental method was used to study the relationship of infrared optical properties and the process parameters. The refractive index and extinction coefficient of films deposited with different deposition rate, substrate temperature and working pressure were studied by using ellipsometer and spectrophotometer. The experimental results show that deposition rate and substrate temperature have a strong influence on optical properties of a-Si films. With the increase of deposition rate and substrate temperature, the refractive index of a-Si film increases firstly and then decreases while increasing with the working pressure. The a-Si film refractive index changes in the range of 2.65-3.38 at the range of 1-5 μm. The a-Si films infrared optical properties can be better obtained with the process parameters: deposition rate 0.6nm/s, substrate temperature 120℃ and working pressure 1.0×l0-2Pa. The refractive index of 2.87 and extinction coefficient of 1.67 E-5 can be obtained at 3 μm.

  15. Enhancement of negative capacitance effect in (CoFeZr)x(CaF2)(100−x) nanocomposite films deposited by ion beam sputtering in argon and oxygen atmosphere

    International Nuclear Information System (INIS)

    Highlights: • (FeCoZr)x(CaF2)(100−x) nanomaterals deposited in oxygen-containing atmosphere (Ar + O2). • FeCoZr “cores” covered with FeCo-oxide “shells” embedded into nonoxygen dielectric matrix. • On σ(Tp) are two minima related to the crossing zero line values of Θ1 = 90° and of Θ2 = −90°. - Abstract: The paper presents frequency f and temperature Tp dependences of phase shift angle Θ, admittance σ and capacitance Cp for the as-deposited and annealed (CoFeZr)x(CaF2)(100−x) nanocomposite films deposited by ion-beam sputtering of a compound target in a mixed argon–oxygen gas atmosphere in vacuum chamber. The studied films presented metallic FeCoZr “cores” covered with FeCo-based oxide “shells” embedded into oxygen-free dielectric matrix (fluorite). It was found for the metallic phase content within the range of 52.2 at.% ⩽ x ⩽ 84.3 at.% in low-f region that Θ values were negative, while in the high-f region we observed the Θ < 0o. It was obtained that the f-dependences of capacitance module displayed minimum at the corresponding frequency when the Θ(f) crossed its zero line Θ = 0o. It was also observed that the σ(Tp) dependence displayed the occurrence of two minima that were related to the values of Θ1 = 90° (the first minimum) and of Θ2 = −90° (the second one). Some possible reasons of such behavior of (CoFeZr)x(CaF2)(100−x) nanocomposite films are discussed

  16. Optical properties of silicon oxide thin films deposited by reactive ion-beam sputtering method%离子束反应溅射沉积SiO2薄膜的光学特性

    Institute of Scientific and Technical Information of China (English)

    米高园; 朱昌; 戚云娟; 达斯坦科; 格拉索夫; 扎瓦斯基

    2011-01-01

    主要研究采用离子束反应溅射(RIBS)制备SiO2薄膜的折射率、消光系数、化学计量比与氧气在氮氧混合工作气体中含量及其沉积速率的关系.研究结果表明:RIBS制备的SiO2薄膜在0.63μm 处折射率n= 1.48,消光系数小于10(-5);随着沉积速率的增加,薄膜的折射率和消光系数随之变大,当沉积速率超过0.3 nm/s,即使是在纯氧环境溅射,折射率值也不低于1.5;通过对红外透射光谱的主吸收峰位置研究得到沉积的SiO2薄膜为缺氧型,化学计量比不超过1.8,且红外吸收峰位置和SiO2折射率存在对应关系,因此在不加热衬底情况下使用RIBS制备SiO2薄膜时,会限制沉积速率的提高.%Silicon oxide thin films deposited by reactive ion-beam sputtering (RIBS) of Si targets in Ar/O2 producer gas mixture were investigated. The refractive index n, extinction coefficient k, and stoichiometry were dependent on the oxygen concentration in Ar/O2 producer gas mixture and the deposition rate. Silicon oxide films with refractive index of n = 1. 48 and extinction coefficient of less than 10-5 were deposited with the RIBS method at the wavelength of 0. 63 μm. An increase in the deposition rate results in the growth of refractive index and extinction coefficient of the film due to incomplete oxidation of silicon and formation of suboxides. In the case of deposition rate more than 0. 3 nm/s, even if sputtering is performed in pure oxygen environment, the minimal value of refractive index is more than 1. 5. The analysis of the IR transmission spectrum proves that all the deposited films have oxygen deficiency, and the stoichiometry of silicon oxide does not exceed 1. 8 based on the investigation of the position of the main absorption peak. The dependence between IR adsorption peak position and refractive index of silicon oxide is established. Thus, depositing silicon-oxide thin films with RIBS without heating the substrates limits the increase of deposition

  17. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

    Science.gov (United States)

    Ke, S. Y.; Yang, J.; Qiu, F.; Wang, Z. Q.; Wang, C.; Yang, Y.

    2015-11-01

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  18. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-01

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  19. The Changes in Skeletal Muscle Ultrasructure and MGF during and after Exhaustive Exercise in Rat%大负荷运动及其恢复期间大鼠骨骼肌超微结构及MGF的变化

    Institute of Scientific and Technical Information of China (English)

    潘同斌; 王晓雪; 唐芳; 左伟; 刘跃兵; 温慧霞

    2012-01-01

    Objective The purpose of this paper was to study the changes in skeletal muscle ultrasructure and mechano growth factors (MGF) during and after exhaustive exercise in rat. Methods Thirty six 8-week-old healthy male SD rats were randomly and equally divided into following 6 groups: sedentary control group (C);immediately after exhaustive exercise group(E0);12 hours after exhaustive exercise group (E12);24 hours after exhaustive exercise (E24);48 hours after exhaustive exercise group (E48);and 72 hours after exhaustive exercise group (E72). Rats in all exhaustive exercise groups underwent tail-loaded(3% of body weight) swimming once a day for seven days. Rats in respective groups were killed immediately,and at 12,24,48 and 72 hours after the last exhaustive exercise. The protein expression of MGF in gastrocnemius and serum was measured by ELISA, and the ultrastructural changes in rat rectus femoris were observed by electron microscopy. Results After a week of heavy-load swimming , (1 )widened muscle gap, slight deformation of endoplasmic reticulum and mitochondria, loose and thin myofibrils, and distorted Z lines revealed in all exhaustive exercise groups, especially in groups EO and E24; (2)the MGF increased significantly in all exhaustive exercise groups,especially in group E24 (P < 0.01) ;and MGF in group EO was significantly different from group C (P < 0.01). Conclusion Exhaustive swimming could cause micro-injury of skeletal muscles to a certain extent, and the increased MGF in skeletal muscle and serum after the exercise probably related to the repair process of the micro-injury.%目的:观察大负荷运动及其恢复期间大鼠骨骼肌超微结构及机械生长因子(MGF)的变化.方法:36只8周龄健康雄性SD大鼠随机分为6组,每组6只:安静对照组(C组)和力竭运动后即刻组(E0组)、12h组(E12组)、24h组(E24组)、48h组(E48组)、72h组(E72组).各力竭运动组尾部负重为3%体重,进行1周负

  20. Atomic scale modelling of nanosize Ni sub 3 Al cluster beam deposition on Al, Ni and Ni sub 3 Al (1 1 1) surfaces

    CERN Document Server

    Kharlamov, V S; Hou, M

    2002-01-01

    The slowing down of Ni sub 3 Al clusters on a Al, Ni and Ni sub 3 Al (1 1 1) surfaces is studied by atomic scale modelling. The semi-grand canonical metropolis Monte Carlo is used for the preparation of isolated clusters at thermodynamic equilibrium. The cluster deposition on the surface is studied in detail by classical Molecular Dynamics simulations that include a model to account for electron-phonon coupling. Long- and short-range orders in the cluster are evaluated as functions of temperature in an impact energy range between 0 and 1.5 eV/atom. The interaction between the Ni sub 3 Al cluster and an Al surface is characterised low short range (chemical) disorder. No sizeable epitaxy is found, subsequent to the impact. In contrast, in the case of Ni and Ni sub 3 Al substrates, which are harder materials than aluminium, the chemical disorder is higher and epitaxial accommodation is possible. With these substrates, chemical disorder in the cluster is an increasing function of the impact energy, as well as of ...

  1. Magnetic properties and structure of Ni80Fe20/Ni48Fe12Cr40 bilayer films deposited on SiO2/Si(100) by electron beam evaporation

    Institute of Scientific and Technical Information of China (English)

    WU Ping; GAO Yanqing; QIU Hong; PAN Liqing; TIAN Yue; Wang Fengping

    2007-01-01

    Ni80Fe20/Ni48Fe12Cr40 bilayer films and Ni80Fe20 monolayer films were deposited at room temperature on SiO2/Si(100) substrates by electron beam evaporation. The influence of the thickness of the Ni48Fe12Cr40underlayer on the structure, magnetization, and magnetoresistance of the Ni80Fe20/Ni48Fe12Cr40 bilayer film was investigated. The thickness of the Ni48Fe12Cr40 layer varied from about 1 nm to 18 nm while the Ni80Fe20 layer thickness was fixed at 45 nm. For the as-deposited bilayer films the introducing of the Ni48Fe12Cr40 underlayer promotes both the (111) texture and grain growth in the Ni80Fe20 layer. The Ni48Fe12Cr40 underlayer has no significant influence on the magnetic moment of the Ni80Fe20/Ni48Fe12Cr40 bilayer film. However, the coercivity of the bilayer film changes with the thickness of the Ni48Fe12Cr40underlayer. The optimum thickness of the Ni48Fe12Cr40 underlayer for improving the anisotropic magnetoresistance effect of the Ni80Fe20/Ni48Fe12Cr40 bilayer film is about 5 nm. With a decrease in temperature from 300 K to 81 K, the anisotropic magnetoresistance ratio of the Ni80Fe20 (45 nm)/Ni48Fe12Cr40 (5 nm) bilayer film increases linearly from 2.1% to 4.8% compared with that of the Ni80Fe20 monolayer film from 1.7% to 4.0%.

  2. Enhancement of negative capacitance effect in (CoFeZr){sub x}(CaF{sub 2}){sub (100−x)} nanocomposite films deposited by ion beam sputtering in argon and oxygen atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Koltunowicz, T.N., E-mail: t.koltunowicz@pollub.pl [Lublin University of Technology, 20-618 Lublin (Poland); Zhukowski, P., E-mail: p.zhukowski@pollub.pl [Lublin University of Technology, 20-618 Lublin (Poland); Bondariev, V. [Lublin University of Technology, 20-618 Lublin (Poland); Saad, A. [Al Balqa Applied University, Physics Department, P.O. Box 4545, Amman 11953 (Jordan); Fedotova, J.A. [National Center for Particles and High Energy Physics of Belarusian State University, 220040 Minsk (Belarus); Fedotov, A.K. [Belarusian State University, 220030 Minsk (Belarus); Milosavljević, M. [VINČA Institute of Nuclear Sciences, Belgrade University, P.O. Box 522, 11001 Belgrade (Serbia); Kasiuk, J.V. [National Center for Particles and High Energy Physics of Belarusian State University, 220040 Minsk (Belarus)

    2014-12-05

    Highlights: • (FeCoZr){sub x}(CaF{sub 2}){sub (100−x)} nanomaterals deposited in oxygen-containing atmosphere (Ar + O{sub 2}). • FeCoZr “cores” covered with FeCo-oxide “shells” embedded into nonoxygen dielectric matrix. • On σ(T{sub p}) are two minima related to the crossing zero line values of Θ{sub 1} = 90° and of Θ{sub 2} = −90°. - Abstract: The paper presents frequency f and temperature T{sub p} dependences of phase shift angle Θ, admittance σ and capacitance C{sub p} for the as-deposited and annealed (CoFeZr){sub x}(CaF{sub 2}){sub (100−x)} nanocomposite films deposited by ion-beam sputtering of a compound target in a mixed argon–oxygen gas atmosphere in vacuum chamber. The studied films presented metallic FeCoZr “cores” covered with FeCo-based oxide “shells” embedded into oxygen-free dielectric matrix (fluorite). It was found for the metallic phase content within the range of 52.2 at.% ⩽ x ⩽ 84.3 at.% in low-f region that Θ values were negative, while in the high-f region we observed the Θ < 0{sup o}. It was obtained that the f-dependences of capacitance module displayed minimum at the corresponding frequency when the Θ(f) crossed its zero line Θ = 0{sup o}. It was also observed that the σ(T{sub p}) dependence displayed the occurrence of two minima that were related to the values of Θ{sub 1} = 90° (the first minimum) and of Θ{sub 2} = −90° (the second one). Some possible reasons of such behavior of (CoFeZr){sub x}(CaF{sub 2}){sub (100−x)} nanocomposite films are discussed.

  3. Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si{sub 3}N{sub 4} nanocomposite coatings deposited by sputtering on AISI 316L

    Energy Technology Data Exchange (ETDEWEB)

    García, J. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C.E. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rodríguez, E.; Jiménez, O. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Solis, C.; Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, México, D.F. 07738 (Mexico)

    2014-07-15

    In this work, nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4}, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an Ar–N{sub 2} plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4} show crystalline (TiN) and amorphous (Si{sub 3}N{sub 4}) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.

  4. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

    Science.gov (United States)

    Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Chien Liu, Shin; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-05-01

    High-κ cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D it) was calculated to be 5.5 × 1011 eV-1 cm-2 at 150 °C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I ON/I OFF) of 1.14 × 109, and a low gate leakage current density (J leakage) of 2.85 × 10-9 A cm-2 with an improved dynamic ON-resistance (R ON), which is about one order of magnitude lower than that of a conventional HEMT.

  5. 补充谷氨酰胺对过度训练大鼠腹膜巨噬细胞IGF-1和MGF基因表达的影响%Supplementing Glutamine Affects the IGF-1 and MGF mRNA Levels in Peritoneal Macrophages of Overtrained Rats

    Institute of Scientific and Technical Information of China (English)

    肖卫华; 陈佩杰

    2011-01-01

    目的:了解补充谷氨酰胺对过度训练大鼠腹膜巨噬细胞胰岛素样生长因子1(IGF-1)和机械生长因子(MGF)基因表达的影响.方法:8周龄健康雄性Wistar大鼠40K,随机分为安静对照组(C)、过度训练组(E)、过度训练补充谷氨酰胺组(EG).后两组根据取材时间不同分为2组:运动后36 h取材组(E1、EG1),运动后7天取材组(E2、EG2).总计5组,每组8只,除C组外,其他4组进行ll周递增负荷跑台训练.EG组从第5周开始至第8周灌胃补充谷氨酰胺(0.8 g/kg/d),以后几周加至饮用水补充,剂量逐周加大到1.1 g/kg/d.断头处死大鼠并分离纯化腹膜巨噬细胞,采用荧光定量PCR技术测定IGF-1和MGF基因表达.结果:安静状态下巨噬细胞即可表达IGF-1和MGF.11周过度训练后36 h,巨噬细胞IGF-1、MGF表达量显著增加,分别约为安静对照组的2l倍和92倍(P<0.01).EG1组IGF-1、MGF表达显著增加,分别约为安静对照组的10倍和37倍(P<0.01),但显著低于E1组(P<0.01).停训后恢复7天,E2组、EG2组IGF-1、MGF表达量分别与E1组、EG1组相比均显著下降(P<0.01),但与C组相比差异无统计学意义.结论:静息态巨噬细胞可表达IGF-1和MGF:过度训练可增强巨噬细胞IGF-1和MGF表达,MGF表达对运动应激更敏感;补充谷氨酰胺可部分抑制巨噬细胞IGF-1和MGF对过度训练的应答.%Objective To investigate the effect of supplementation of glutamine (Gln) on the IGF-1 and MGF mRNA levels in peritoneal macrophages of rats with overtraining. Methods Forty male Wistar rats were randomly divided into following groups: sedentary group (C, n = 8) , overtraining group (E) , overtraining and supplementation of Gln group (EG) . The groups E and EG were respectively subdivided into two groups which were sacrificed 36 hours (E1, EG1, n = 8) and 7 days (E2,EG2, n = 8) after the last training. All groups except the C underwent standard treadmill training with an increasing load for 11 weeks. And group EG

  6. Bessel Beams

    OpenAIRE

    McDonald, Kirk T

    2000-01-01

    Scalar Bessel beams are derived both via the wave equation and via diffraction theory. While such beams have a group velocity that exceeds the speed of light, this is a manifestation of the "scissors paradox" of special relativty. The signal velocity of a modulated Bessel beam is less than the speed of light. Forms of Bessel beams that satisfy Maxwell's equations are also given.

  7. Large area ion and plasma beam sources

    International Nuclear Information System (INIS)

    In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

  8. Influence of Al3+doping on the energy levels and thermal property of the 3.5MgO·0.5MgF2·GeO2:Mn4+ red-emitting phosphor

    Science.gov (United States)

    Yuan, Lin-lin; Zhang, Xiao-Song; Xu, Jian-Ping; Sun, Jian; Jin, Han; Liu, Xiao-Juan; Li, Lin-Lin; Li, Lan

    2015-08-01

    A series of Al3+ -doped 3.5MgO·0.5MgF2·GeO2:Mn4+ red-emitting phosphors is synthesized by high temperature solid-state reaction. The broad excitation band at 300 nm-380 nm, resulting from the 4A2 → 4T1 transition of Mn4+, exhibits a blue shift with the increase of Al2O3 content. The observation of the decreased Mn4+O2 - distance is explained by the crystal field theory. The temperature-dependent photoluminescence spectra with various amounts of Al2O3 content are comparatively measured and the calculation shows that the activation energy increases up to 0.41 eV at the Al2O3 content of 0.1 mol. The maximum phonon densities of state for these samples are calculated from Raman spectra and they are correlated with the thermal properties. Project supported by the National High Technology Research and Development Program of China (Grant No. 2013AA014201), the Natural Science Foundation of Tianjin City, China (Grant Nos. 11JCYBJC00300 and 14JCZDJC31200), and the National Key Foundation for Exploring Scientific Instrument of China (Grant No. 2014YQ120351).

  9. Electron Beam Lithography

    Science.gov (United States)

    Harriott, Lloyd R.

    1997-04-01

    V) electrons. The entire mask structure is essentially transparent to the electron beam and little energy is deposited there. The portions of the beam which pass through the high atomic number pattern layer are scattered through angles of a few milliradians. An aperture in the back focal plane of the electron projection imaging lenses stops the scattered electrons and produces a high contrast image at the plane of the semiconductor wafer. Such echniques may lead to a prominent role for electrons in main-stream patterning for semiconductor fabrication. One hundred years after their discovery, electron beams are just on the threshold of a very promising future.

  10. Opal neutron beams shutters

    International Nuclear Information System (INIS)

    Full text: The Opal Reactor has five beam tubes for neutron beams. Of these 5 tubes, two come from a cold neutron source, another two from thermal sources, and a fifth is ready for a future hot neutron source. Neutron guides come from the cold and thermal beam tubes. Neutron beams are enabled/disabled through shutters located inside the reactor pool's radial shield. These shutters were specially designed by INVAP for the OPAL reactor. They comprise fixed and movable shields. The movable part allows neutron beam enabling or disabling. The design of these shutters demanded the construction of prototypes that were further submitted to comprehensive tests to be qualified in light of the strict movement precision and high reliability requirements involved. The shielding material - a plastic and steel mix - was also specifically designed for this facility. The design required great efforts as to shield calculation and energy deposition. A heat removal system was designed to dissipate the energy absorbed by the shields. The cold and thermal beam shutters are built following a single vertical axis design. The hot shutter, due to different requirements, was designed with a horizontal axis

  11. Microstructure and magneto-resistor of Co/Ru multimembranes fabricated by electron beam vapor deposition metheod%电子束蒸发法制备Co/Ru多层膜的微观结构与磁电阻

    Institute of Scientific and Technical Information of China (English)

    郝安林

    2014-01-01

    The Co/Ru multimembranes with different thickness of Co layer were prepared by electron beam vapor deposition. XRD, HRTEM and TEM were employed to investigate the microstructure of the multimembranes. The effect of microstructure on magnetic properties and the magneto-resistor origin mechanism of Co/Ru multimembranes were discussed. The results show that the thickness of Co layer has great effect on the microstructure and magneto-resisitor properties of the multimembranes. When the thickness of Co layer is more than 0.8 nm, the growth of multimembranes follows Frank-van der Merwe mode while the crystallinity is better with the thickness of the Co layer increase, and the multimembranes show negative magneto-resistance effect;when the thickness of Co layer is less than 0.5 nm, the growth of multimembranes follows Volmer-Weber mode and the multimembranes show positive magneto-resistance effect due to the asymmetry interface.%采用电子束蒸发法制备具有不同Co层厚度的Co/Ru多层膜。采用X射线衍射(XRD)、高分辨透射电镜(HRTEM)、扫描电镜(TEM)等对多层膜的微观结构进行观察与分析,研究多层膜微观结构对多层膜磁阻性能的影响,并探讨多层膜磁阻的产生机理。结果表明:Co层的厚度tCo对于薄膜的微观结构和磁阻性能有很大影响,当tCo≥0.8 nm时Co/Ru多层膜以层状方式连续生长,且tCo越大,薄膜结晶越完整,薄膜呈现负磁阻效应;当tCo=0.5 nm时,Co/Ru多层膜为岛状生长,Co/Ru界面的不对称性使得薄膜出现正磁阻效应。

  12. Beam - cavity interaction beam loading

    International Nuclear Information System (INIS)

    The interaction of a beam with a cavity and a generator in cyclic accelerators or storage rings is investigated. Application of Maxwell's equations together with the nonuniform boundary condition allows one to get an equivalent circuit for a beam-loaded cavity. The general equation for beam loading is obtained on the basis of the equivalent circuit, and the beam admittance is calculated. Formulas for power consumption by a beam-loaded cavity are derived, and the optimal tuning and coupling factor are analyzed. (author)

  13. 车载Ad Hoc网络中基于移动网关的数据传输%MGF: Mobile Gateway Based Forwarding for Infrastructure-to-Vehicle Data Delivery in Vehicular Ad Hoc Networks

    Institute of Scientific and Technical Information of China (English)

    陈丽; 李治军; 姜守旭; 冯诚

    2012-01-01

    由于车载Ad hoc网络拓扑的动态变化及车载节点的快速移动,应用现有传输方法在其上进行Internet接入点向移动车辆(Infrastructure-to-Vehicle,I2V)数据传输时成功率较低,而且传输延迟高、延迟抖动大.为了解决这一问题,文中利用公交车路线固定、运行特征可预测、节点及线路分布稠密等特性,将公交车作为移动网关( Mobile Gateway,MG),提出了一种新的基于MG转发的I2V数据传输方法(Mobile Gateway based Forwarding,MGF).文中首先将公路网模型化为状态-空间图,再运用马尔可夫决策方法建立了一种基于MG转发的I2V数据传输优化模型,然后通过对模型求解得出I2V数据传输的最优转发决策,最优转发决策指的就是每个状态下对应的最优动作序列,最后在目的车辆行驶轨迹上选取满足传输成功率阈值,并使I2V传输延迟最小的路口节点作为数据包与目的车辆的最优汇聚节点,即目标节点.应用MGF方法,MG节点将以最优概率转发序列向目标节点转发数据包.文中利用模拟平台对MGF方法的传输性能进行了评估,结果表明该方法在满足传输成功率阈值前提下,能够获得最小传输延迟期望.理论分析同样也证明了该方法的有效性.%The highly dynamic topology and the rapid movement of destination node pose special challenges to Infrastructure-to-Vehicle (I2V) data delivery in Vehicular Ad Hoc Networks (VANET). Current data delivery methods are with the strong delay, the large jitter of delay and low delivery ratio for I2V data delivery. The paper investigates how to effectively utilize the prominent characteristic of buses, and proposes Mobile Gateway (MG) based Forwarding (MGF) that buses are installed as MG to forward data packet. To solve the problem that the paper models road network as a probabilistic state-space graph, in which applies the value iteration algorithm for the markov decision processing model to derive the

  14. Advanced zirconia-coated carbonyl-iron particles for acidic magnetorheological finishing of chemical-vapor-deposited ZnS and other IR materials

    Science.gov (United States)

    Salzman, S.; Giannechini, L. J.; Romanofsky, H. J.; Golini, N.; Taylor, B.; Jacobs, S. D.; Lambropoulos, J. C.

    2015-10-01

    We present a modified version of zirconia-coated carbonyl-iron (CI) particles that were invented at the University of Rochester in 2008. The amount of zirconia on the coating is increased to further protect the iron particles from corrosion when introduced to an acidic environment. Five low-pH, magnetorheological (MR) fluids were made with five acids: acetic, hydrochloric, nitric, phosphoric, and hydrofluoric. All fluids were based on the modified zirconia-coated CI particles. Off-line viscosity and pH stability were measured for all acidic MR fluids to determine the ideal fluid composition for acidic MR finishing of chemical-vapor-deposited (CVD) zinc sulfide (ZnS) and other infrared (IR) optical materials, such as hot-isostatic-pressed (HIP) ZnS, CVD zinc selenide (ZnSe), and magnesium fluoride (MgF2). Results show significant reduction in surface artifacts (millimeter-size, pebble-like structures on the finished surface) for several standard-grade CVD ZnS substrates and good surface roughness for the non-CVD MgF2 substrate when MR finished with our advanced acidic MR fluid.

  15. Denton E-beam Evaporator #2

    Data.gov (United States)

    Federal Laboratory Consortium — Description: CORAL Name: E-Beam Evap 2 This is an electron gun evaporator for the deposition of metals and dielectrics thin films. Materials available are: Ag, Al,...

  16. NONMETALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    <正>20102406 Chen Gang(China University of Geosciences,Beijing 100083,China);Li Fengming Discussion on Geological Characteristics and Genesis of Yuquanshan Graphite Deposit of Xinjiang(Xinjiang Geology,ISSN1000-8845,CN65-1092/P,27(4),2009,p.325-329,4 illus.,4 tables,5 refs.)Key words:graphite deposit,XinjiangYuquanshan graphite deposit of Xinjiang occurs in mica-quartz schist of Xingeer Information which belongs to Xinditate Group of Lower Pt in Kuluketage Block of Tarim paleo-continent,and experiences two mineralizing periods of

  17. Beam loading

    CERN Document Server

    Gamp, Alexander

    2013-01-01

    We begin by giving a description of the radio-frequency generator-cavity-beam coupled system in terms of basic quantities. Taking beam loading and cavity detuning into account, expressions for the cavity impedance as seen by the generator and as seen by the beam are derived. Subsequently methods of beam-loading compensation by cavity detuning, radio-frequency feedback and feedforward are described. Examples of digital radio-frequency phase and amplitude control for the special case of superconducting cavities are also given. Finally, a dedicated phase loop for damping synchrotron oscillations is discussed.

  18. Confined ion beam sputtering device and method

    Science.gov (United States)

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  19. NONMETALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2014-01-01

    <正>20140876 Gao Junbo(College of Resources and Environmental Engineering,Guizhou University,Guiyang 550025,China);Yang Ruidong Study on the Strontium Isotopic Composition of Large Devonian Barite Deposits from Zhenning,Guizhou Province(Geochimica,

  20. NONMETALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    <正>20122457 Cai Jianshe ( Fujian Institute of Geological Survey and Drawing,Fuzhou 350011,China ) On the Geologic Characteristics and Genesis of the Longtangsi Fluorite Deposit in Pucheng County,Fujian Province ( Geology of Fujian,ISSN1001-3970,CN35-1080 / P,30 ( 4 ), 2011,p.301-306,3illus.,1table,6 refs.,with English abstract ) Key words:fluorspar deposit,Fujian Province

  1. Treatment Plans for Antiproton Beams

    DEFF Research Database (Denmark)

    Holzscheiter, Michael; Bassler, Niels; Herrmann, Rochus;

    Antiprotons have been proposed as potential modality for particle beam cancer therapy by Gray and Kalogeropoulos in 1985. This proposal was based on the enhancement of physical dose deposition near the end of range due to the annihilation of antiprotons when captured by a nucleus and the expectat...

  2. Beam Instabilities

    CERN Document Server

    Rumolo, G

    2014-01-01

    When a beam propagates in an accelerator, it interacts with both the external fields and the self-generated electromagnetic fields. If the latter are strong enough, the interplay between them and a perturbation in the beam distribution function can lead to an enhancement of the initial perturbation, resulting in what we call a beam instability. This unstable motion can be controlled with a feedback system, if available, or it grows, causing beam degradation and loss. Beam instabilities in particle accelerators have been studied and analysed in detail since the late 1950s. The subject owes its relevance to the fact that the onset of instabilities usually determines the performance of an accelerator. Understanding and suppressing the underlying sources and mechanisms is therefore the key to overcoming intensity limitations, thereby pushing forward the performance reach of a machine.

  3. NONMETALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    <正>20110947 Chen Xinglong(Guizhou Bureau of Nonferrous Metal and Nuclear Geology,Guiyang 550005,China);Gong Heqiang Endowment Factors and Development & Utilization Strategy of Bauxite Resource in North Guizhou Province(Guizhou Geology,ISSN1000-5943,CN52-1059/P,27(2),2010,p.106-110,6 refs.,with English abstract)Key words:bauxite deposit,Guizhou Province20110948 Dang Yanxia(Mineral Resource & Reservoir Evaluation Center,Urumiq 830000,China);Fan Wenjun Geological Features and a Primary Study of Metallogenesis of the Wucaiwang Zeolite Deposit,Fuyun County(Xinjiang Geology,ISSN1000-8845,CN65-1092/P,28(2),2010,p.167-170,2 illus.,1 table,5 refs.)Key words:zeolite deposit,Xinjiang Nearly all zeolite deposits in the world result from low-temperature-alteration of glass-bearing volcanic rocks.The southern slope of the Kalamali Mountain is one of the regions where medium to acid volcanics are major lithological type,thus it is a preferred area to look for zeolite deposit.The Wucaiwang zeolite ore district consists of mainly acid volcanic-clastic rocks.

  4. Active Beam Spectroscopy

    Science.gov (United States)

    von Hellermann, M. G.; Delabie, E.; Jaspers, R. J. E.; Biel, W.; Marchuk, O.; Summers, H. P.; Whiteford, A.; Giroud, C.; Hawkes, N. C.; Zastrow, K. D.

    2008-03-01

    Charge eXchange Recombination Spectroscopy (CXRS) plays a pivotal role in the diagnostics of hot fusion plasmas and is implemented currently in most of the operating devices. In the present report the main features of CXRS are summarized and supporting software packages encompassing "Spectral Analysis Code CXSFIT", "Charge Exchange Analysis Package CHEAP", and finally "Forward Prediction of Spectral Features" are described. Beam Emission Spectroscopy (BES) is proposed as indispensable cross-calibration tool for absolute local impurity density measurements and also for the continuous monitoring of the neutral beam power deposition profile. Finally, a full exploitation of the `Motional Stark Effect' pattern is proposed to deduce local pitch angles, total magnetic fields and possibly radial electric fields. For the proposed active beam spectroscopy diagnostic on ITER comprehensive performance studies have been carried out. Estimates of expected spectral signal-to-noise ratios are based on atomic modelling of neutral beam stopping and emissivities for CXRS, BES and background continuum radiation as well as extrapolations from present CXRS diagnostic systems on JET, Tore Supra, TEXTOR and ASDEX-UG. Supplementary to thermal features a further promising application of CXRS has been proposed recently for ITER, that is a study of slowing-down alpha particles in the energy range up to 2 MeV making use of the 100 keV/amu DNB (Diagnostic Neutral Beam) and the 500 keV/amu HNB (Heating Neutral Beam). Synthetic Fast Ion Slowing-Down spectra are evaluated in terms of source rates and slowing-down parameters

  5. METALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    <正>20091594 Bao Yafan(The Third Geologic Survey of Jilin Province,Siping 136000,China);Liu Yanjun Relations between Bashenerxi Granite,West Dongkunlun and Baiganhu Tungsten-Tin Deposit(Jilin Geology,ISSN1001-2427,CN22-1099/P,27(3),2008,p.56-59,67,5 illus.,2 tables,7 refs.,with English abstract)Key words:tungsten ores,tin ores,monzogranite,Kunlun Mountains20091595 Chen Fuwen(Yichang Institute of Geology and Mineral Resources,China Geological Survey,Yichang 443003,China);Dai Pingyun Metallogenetic and Isotopic Chronological Study on the Shenjiaya Gold Deposit in Xuefeng Mountains,Hunan Province(Acta Geologica Sinica,ISSN0001-5717,CN11-1951/P,82(7),2008,p.906-911,3 illus.,2 tables,30 refs.)Key words:gold ores,HunanThe Shenjiaya gold deposit is a representative one

  6. METALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    <正>20111705 An Junbo(Team 603,Bureau of Nonferrous Metals Geological Exploration of Jilin Province,Hunchun 133300,China);Xu Renjie Geological Features and Ore Genesis of Baishilazi Scheelite Deposit in Yanbian Area(Jilin Geology,ISSN1001-2427,CN22-1099/P,29(3),2010,p.39-43,2 illus.,2 tables,7 refs.)Key words:tungsten ores,Jilin ProvinceThe Baishilazi scheelite deposit is located in contacting zone between the marble of the Late Palaeozoic Qinglongcun Group and the Hercynian biotite granite.The vein and lenticular major ore body is obviously controlled by NE-extending faults and con

  7. Beam collimator

    CERN Multimedia

    1977-01-01

    A four-block collimator installed on a control table for positioning the alignment reference marks. Designed for use with SPS secondary beams, the collimator operates under vacuum conditions. See Annual Report 1976 p. 121 and photo 7701014.

  8. METALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2013-01-01

    <正>20131565 Cai Lianyou(No.332 Geological Team,Bureau of Geology and Mineral Resources Exploration of Anhui Province,Huangshan 245000,China);Weng Wangfei Geological Characteristics and Genesis Analysis of Guocun Navajoite Deposit in South Anhui Province(Mineral Resources and Geology,

  9. METALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    <正>20102341 Bao Peisheng(Institute of Geology,Chinese Academy of Geological Science,Beijing 100037,China)Further Discussion on the Genesis of the Podiform Chromite Deposits in the Ophiolites-Questioning about the Rock:Melt Interaction Metallogeny(Geological Bulletin of China,ISSN1671-2552,CN11-4648/P,28(12),2009,p.1741-1761

  10. NONMETALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2013-01-01

    <正>20131601 Gao Junbo(College of Resources and Environmental Engineering,Guizhou University,Guiyang 550003,China);Yang Ruidong Hydrothermal Venting-Flowing Sedimentation Characteristics of Devonian Barite Deposits from Leji,Zhenning County,Guizhou Province(Acta Sedimentologica Sinica,ISSN1000-0550,CN62-1038/P,30(3),

  11. METALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2015-01-01

    20150904An Fang(State Key Laboratory of Continental Dynamics,Department of Geology,Northwest University,Xi’an 710069,China);Wang Juli Skarn Mineral Assemblage in Representative Ore Districts of Sayak Copper Orefield,Kazakhstan,and Its Genetic Implications(Mineral Deposits,ISSN0258-7106,CN11-1965/P,33(3),2014,p.521-540,

  12. Simulation of Electron-Beam Generating Plasma at Atmospheric Pressure

    Institute of Scientific and Technical Information of China (English)

    OUYANG Liang; LI Hong; LI Benben; ZHOU Junqing; YAN Hong; SU Tie; WANG Huihui; LIUWandong

    2007-01-01

    As electron-beam generating plasma is widely applied,the software tool EGS4(Electron-Gamma Shower) was used to simulate the transmission and energy deposition of electron-beam in air.The simulation results indicated that the range of the electron-beam was inversely proportional to the gas pressure in a wide range of gas pressure,and the electron-beam of 200 keV could generate a plasma with a density 1011 cm-3 in air of latm.In addition,the energy distribution of the beam-electron and plasma density profile produced by the beam were achieved.

  13. Texture control during laser deposition of nickel-based superalloy

    International Nuclear Information System (INIS)

    A nickel-based superalloy was deposited on a nickel-based superalloy substrate by a laser-aided direct metal deposition process. The age-hardening behavior of the as-deposited clad was studied. The effect of laser beam scanning pattern on dendrite growth morphology was investigated using electron backscatter diffraction. Unidirectional laser beam scanning pattern developed a fiber texture; conversely, a backward and forward scanning pattern developed a rotated cube texture in the deposit. This paper reports a route to produce texture-controlled laser clad on a polycrystalline substrate.

  14. NONMETALS DEPOSITS

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    <正>20111761 Chen Hua(115 Geological Party,Guizhou Bureau of Geology and Mineral Exploration & Development,Guiyang 551400,China);Deng Chao Analysis on the Metallogenic Environment of Maochang Bauxite in Guizhou Province(Guizhou Geology,ISSN1000-5943,CN52-1059/P,27(3),2010,p.198-201,2 illus.,1 table,8 refs.)Key words:bauxite deposit,Guizhou Province By long time physical and chemical process,the carbonate rock after Central Guizhou uplidft,becomes red clay,after further weathering,the red clay decomposed into the oxide,hydroxide of Al and Fe,in the dissolution hole and depression,it concentrates primary fragmentary tight and earthy karst bauxite ore.Because the variation of landform,it decomposes and cracks again,affords the material source

  15. External Beam Therapy (EBT)

    Science.gov (United States)

    ... Physician Resources Professions Site Index A-Z External Beam Therapy (EBT) External beam therapy (EBT) is a ... follow-up should I expect? What is external beam therapy and how is it used? External beam ...

  16. Ion-Bombardment of X-Ray Multilayer Coatings - Comparison of Ion Etching and Ion Assisted Deposition

    NARCIS (Netherlands)

    Puik, E. J.; van der Wiel, M. J.; Zeijlemaker, H.; Verhoeven, J.

    1991-01-01

    The effects of two forms of ion bombardment treatment on the reflectivity of multilayer X-ray coatings were compared: ion etching of the metal layers, taking place after deposition, and ion bombardment during deposition, the so-called ion assisted deposition. The ion beam was an Ar+ beam of 200 eV,

  17. Plasma beam discharge in carbon dioxide

    International Nuclear Information System (INIS)

    The paper deals with the dissociation of carbon dioxide in nonequilibrium plasma of a stationary plasma-beam discharge. Experimental results of spectroscopic and probe measurements of plasma parameters are given. Moreover, a mass-spectrometric analysis of gaseous products of the chemical reactions is presented. In addition the measurement of the deposition rate of solid products by means of a quartz oscillator is described. The results show that plasma beam discharge is an effective tool for inducing plasma-chemical reactions. (author)

  18. Simulation of dose deposition in heterogeneities in the human body, using the Penelope code for photons beams of energies of a linear accelerator; Simulacion de la deposicion de dosis en las heterogeneidades del cuerpo humano, usando el codigo Penelope para haces de fotones de energias de un acelerador lineal

    Energy Technology Data Exchange (ETDEWEB)

    Cardena R, A. R.; Vega R, J. L.; Apaza V, D. G., E-mail: cardroj@yahoo.es [Universidad Nacional de San Agustin, Av. Independencia s/n, Arequipa (Peru)

    2015-10-15

    The progress in cancer treatment systems in heterogeneities of human body has had obstacles by the lack of a suitable experimental model test. The only option is to develop simulated theoretical models that have the same properties in interfaces similar to human tissues, to know the radiation behavior in the interaction with these materials. In this paper we used the Monte Carlo method by Penelope code based solely on studies for the cancer treatment as well as for the calibration of beams and their various interactions in mannequins. This paper also aims the construction, simulation and characterization of an equivalent object to the tissues of the human body with various heterogeneities, we will later use to control and plan experientially doses supplied in treating tumors in radiotherapy. To fulfill the objective we study the ionizing radiation and the various processes occurring in the interaction with matter; understanding that to calculate the dose deposited in tissues interfaces (percentage depth dose) must be taken into consideration aspects such as the deposited energy, irradiation fields, density, thickness, tissue sensitivity and other items. (Author)

  19. Biosensor Applications of MAPLE Deposited Lipase

    Directory of Open Access Journals (Sweden)

    Valeria Califano

    2014-10-01

    Full Text Available Matrix Assisted Pulsed Laser Evaporation (MAPLE is a thin film deposition technique derived from Pulsed Laser Deposition (PLD for deposition of delicate (polymers, complex biological molecules, etc. materials in undamaged form. The main difference of MAPLE technique with respect to PLD is the target: it is a frozen solution or suspension of the (guest molecules to be deposited in a volatile substance (matrix. Since laser beam energy is mainly absorbed by the matrix, damages to the delicate guest molecules are avoided, or at least reduced. Lipase, an enzyme catalyzing reactions borne by triglycerides, has been used in biosensors for detection of β-hydroxyacid esters and triglycerides in blood serum. Enzymes immobilization on a substrate is therefore required. In this paper we show that it is possible, using MAPLE technique, to deposit lipase on a substrate, as shown by AFM observation, preserving its conformational structure, as shown by FTIR analysis.

  20. Beam quality measure for vector beams.

    Science.gov (United States)

    Ndagano, Bienvenu; Sroor, Hend; McLaren, Melanie; Rosales-Guzmán, Carmelo; Forbes, Andrew

    2016-08-01

    Vector beams have found a myriad of applications, from laser materials processing to microscopy, and are now easily produced in the laboratory. They are usually differentiated from scalar beams by qualitative measures, for example, visual inspection of beam profiles after a rotating polarizer. Here we introduce a quantitative beam quality measure for vector beams and demonstrate it on cylindrical vector vortex beams. We show how a single measure can be defined for the vector quality, from 0 (purely scalar) to 1 (purely vector). Our measure is derived from a quantum toolkit, which we show applies to classical vector beams. PMID:27472580

  1. Beam Scraping in the SPS for LHC Injection Efficiency and Robustness Studies

    CERN Document Server

    Letnes, Paul/LPA; Myrheim, Jan

    2008-01-01

    The Large Hadron Collider (LHC) at CERN will be the world's most powerful accelerator when it is commissioned in fall 2008. Operation of the LHC will require injection of very high intensity beams. Fast transverse beam scrapers have been installed in the Super Proton Synchrotron (SPS) injector to detect and, if necessary, remove transverse beam tails. This will help to both diagnose and prevent beam quenches in the LHC. Scraping of a high intensity beam at top energy can potentially damage the scraper jaws. This has been studied with Monte Carlo simulations to find energy deposition and limits for hardware damage. Loss maps from scraping have been generated both with machine studies and tracking simulations. Time dependent Beam Loss Monitor (BLM) measurements have shown several interesting details about the beam. An analytical model of time dependent losses is compared with beam measurements and demonstrates that beam scraping can be used to estimate the beam size. Energy deposition simulations also give the ...

  2. Overview of LHC Beam Loss Measurements

    CERN Document Server

    Dehning, B; Effinger, E; Emery, J; Fadakis, E; Holzer, E B; Jackson, S; Kruk, G; Kurfuerst, C; Marsili, A; Misiowiec, M; Nebot Del Busto, E; Nordt, A; Priebe, A; Roderick, C; Sapinski, M; Zamantzas, C; Grishin, V; Griesmayer, E

    2011-01-01

    The LHC beam loss monitoring system provides measurements with an update rate of 1 Hz and high time resolution data by event triggering. These informations are used for the initiation of beam aborts, fixed displays and the off line analysis. The analysis of fast and localized loss events resulted in the determination of its rate, duration, peak amplitudes, its scaling with intensity, number of bunches and beam energy. The calibration of the secondary shower beam loss signal in respect to the needed beam energy deposition to quench the magnet coil is addressed at 450GeV and 3.5T eV . The adjustment of collimators is checked my measuring the loss pattern and its variation in the collimation regions of the LHC. Loss pattern changes during a fill allow the observation of non typical fill parameters.

  3. Stable beams

    CERN Multimedia

    2015-01-01

    Stable beams: two simple words that carry so much meaning at CERN. When LHC page one switched from "squeeze" to "stable beams" at 10.40 a.m. on Wednesday, 3 June, it triggered scenes of jubilation in control rooms around the CERN sites, as the LHC experiments started to record physics data for the first time in 27 months. This is what CERN is here for, and it’s great to be back in business after such a long period of preparation for the next stage in the LHC adventure.   I’ve said it before, but I’ll say it again. This was a great achievement, and testimony to the hard and dedicated work of so many people in the global CERN community. I could start to list the teams that have contributed, but that would be a mistake. Instead, I’d simply like to say that an achievement as impressive as running the LHC – a machine of superlatives in every respect – takes the combined effort and enthusiasm of everyone ...

  4. Beam propagation

    International Nuclear Information System (INIS)

    The main part of this thesis consists of 15 published papers, in which the numerical Beam Propagating Method (BPM) is investigated, verified and used in a number of applications. In the introduction a derivation of the nonlinear Schroedinger equation is presented to connect the beginning of the soliton papers with Maxwell's equations including a nonlinear polarization. This thesis focuses on the wide use of the BPM for numerical simulations of propagating light and particle beams through different types of structures such as waveguides, fibers, tapers, Y-junctions, laser arrays and crystalline solids. We verify the BPM in the above listed problems against other numerical methods for example the Finite-element Method, perturbation methods and Runge-Kutta integration. Further, the BPM is shown to be a simple and effective way to numerically set up the Green's function in matrix form for periodic structures. The Green's function matrix can then be diagonalized with matrix methods yielding the eigensolutions of the structure. The BPM inherent transverse periodicity can be untied, if desired, by for example including an absorptive refractive index at the computational window edges. The interaction of two first-order soliton pulses is strongly dependent on the phase relationship between the individual solitons. When optical phase shift keying is used in coherent one-carrier wavelength communication, the fiber attenuation will suppress or delay the nonlinear instability. (orig.)

  5. Final beam transport in the reactor chamber

    International Nuclear Information System (INIS)

    The beam transport in heavy ion fusion (HIF) accelerators is discussed. The qualitative features of transport effects are presented. The basic transport effects associated with HIF beam are space charge effects, atomic physics effects, zero-order plasma effects, and plasma instabilities. In the case of HIF, very high intensity of HIF beam is required, and its own electric repulsion does not keep the beam converging. The number of beams required for supplying the demand power at a target can be estimated. The beam charge deposited on a target pellet produces electrostatic potential, and the electrostatic repulsion prevents the beam to reach on the target. The upper limit of the gas pressure is determined by small angle Coulomb scattering. Since unneutralized beam has the pinching force, the electrostatic kink mode (wiggle mode) should be considered in the pressure region where beam neutralization does not occur. Two-stream instability, filamentation instability and self-pinched transport are considered. As a conclusion of this paper, the new first choice for HIF transport is to use ballistic transport in moderate vacuum. (Kato, T.)

  6. Deposit model for volcanogenic uranium deposits

    Science.gov (United States)

    Breit, George N.; Hall, Susan M.

    2011-01-01

    Volcanism is a major contributor to the formation of important uranium deposits both close to centers of eruption and more distal as a result of deposition of ash with leachable uranium. Hydrothermal fluids that are driven by magmatic heat proximal to some volcanic centers directly form some deposits. These fluids leach uranium from U-bearing silicic volcanic rocks and concentrate it at sites of deposition within veins, stockworks, breccias, volcaniclastic rocks, and lacustrine caldera sediments. The volcanogenic uranium deposit model presented here summarizes attributes of those deposits and follows the focus of the International Atomic Energy Agency caldera-hosted uranium deposit model. Although inferred by some to have a volcanic component to their origin, iron oxide-copper-gold deposits with economically recoverable uranium contents are not considered in this model.

  7. Beam-induced quench test of LHC main quadrupole

    CERN Document Server

    Priebe, A; Dehning, B; Effinger, E; Emery, J; Holzer, E B; Kurfuerst, C; Nebot Del Busto, E; Nordt, A; Sapinski, M; Steckert, J; Verweij, A; Zamantzas, C

    2011-01-01

    Unexpected beam loss might lead to a transition of the accelerator superconducting magnet to a normal conducting state. The LHC beam loss monitoring (BLM) system is designed to abort the beam before the energy deposited in the magnet coils reach a quench-provoking level. In order to verify the threshold settings generated by simulation, a series of beam-induced quench tests at various beam energies has been performed. The beam losses are generated by means of an orbital bump peaked in one of main quadrupole magnets (MQ). The analysis includes not only BLM data but also the quench protection system (QPS) and cryogenics data. The measurements are compared to Geant4 simulations of energy deposition inside the coils and corresponding BLM signal outside the cryostat.

  8. Electron Beam Emission Characteristics from Plasma Focus Devices

    Science.gov (United States)

    Zhang, T.; Patran, A.; Wong, D.; Hassan, S. M.; Springham, S. V.; Tan, T. L.; Lee, P.; Lee, S.; Rawat, R. S.

    2006-01-01

    In this paper we observed the characteristics of the electron beam emission from our plasma focus machine filling neon, argon, helium and hydrogen. Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal and energy distribution of electron emission. And the preliminary results of deposited FeCo thin film using electron beam from our plasma focus device were presented.

  9. Helium ion beam induced growth of hammerhead AFM probes

    NARCIS (Netherlands)

    Nanda, G.; Van Veldhoven, E.; Maas, D.; Sadeghian, H.; Alkemade, P.F.A.

    2015-01-01

    The authors report the direct-write growth of hammerhead atomic force microscope(AFM) probes by He+beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+beam during exposure to a PtC precursor gas. In the fina

  10. Helium ion beam induced growth of hammerhead AFM probes

    NARCIS (Netherlands)

    Nanda, G.; Veldhoven, E. van; Maas, D.J.; Sadeghian Marnani, H.; Alkemade, P.F.A.

    2015-01-01

    The authors report the direct-write growth of hammerhead atomic force microscope (AFM) probes by He+ beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+ beam during exposure to a PtC precursor gas. In the f

  11. Beam-beam effects in the Tevatron

    Energy Technology Data Exchange (ETDEWEB)

    Shiltsev, V.; Alexahin, Y.; Lebedev, V.; Lebrun, P.; Moore, R.S.; Sen, T.; Tollestrup, A.; Valishev, A.; Zhang, X.L.; /Fermilab

    2005-01-01

    The Tevatron in Collider Run II (2001-present) is operating with 6 times more bunches, many times higher beam intensities and luminosities than in Run I (1992-1995). Electromagnetic long-range and head-on interactions of high intensity proton and antiproton beams have been significant sources of beam loss and lifetime limitations. We present observations of the beam-beam phenomena in the Tevatron and results of relevant beam studies. We analyze the data and various methods employed in operations, predict the performance for planned luminosity upgrades, and discuss ways to improve it.

  12. Moving core beam energy absorber and converter

    Science.gov (United States)

    Degtiarenko, Pavel V.

    2012-12-18

    A method and apparatus for the prevention of overheating of laser or particle beam impact zones through the use of a moving-in-the-coolant-flow arrangement for the energy absorbing core of the device. Moving of the core spreads the energy deposition in it in 1, 2, or 3 dimensions, thus increasing the effective cooling area of the device.

  13. Spiral wobbling beam illumination uniformity in HIF fuel target implosion

    OpenAIRE

    Kawata S.; Kurosaki T.; Koseki S.; Hisatomi Y.; Barada D.; Ma Y.Y.; Ogoyski A.I.

    2013-01-01

    A few % wobbling-beam illumination nonuniformity is realized in heavy ion inertial confinement fusion (HIF) throughout the heavy ion beam (HIB) driver pulse by a newly introduced spiraling beam axis motion in the first two rotations. The wobbling HIB illumination was proposed to realize a uniform implosion in HIF. However, the initial imprint of the wobbling HIBs was a serious problem and introduces a large unacceptable energy deposition nonuniformity. In the wobbling HIBs illumination, the i...

  14. Beam halo in high-intensity beams

    International Nuclear Information System (INIS)

    In space-charge dominated beams the nonlinear space-charge forces produce a filamentation pattern, which in projection to the 2-D phase spaces results in a 2-component beam consisting of an inner core and a diffuse outer halo. The beam-halo is of concern for a next generation of cw, high-power proton linacs that could be applied to intense neutron generators for nuclear materials processing. The author describes what has been learned about beam halo and the evolution of space-charge dominated beams using numerical simulations of initial laminar beams in uniform linear focusing channels. Initial results are presented from a study of beam entropy for an intense space-charge dominated beam

  15. Boron carbide coating deposition on tungsten substrates from atomic fluxes of boron and carbon

    Science.gov (United States)

    Sadovskiy, Y.; Begrambekov, L.; Ayrapetov, A.; Gretskaya, I.; Grunin, A.; Dyachenko, M.; Puntakov, N.

    2016-09-01

    A device used for both coating deposition and material testing is presented in the paper. By using lock chambers, sputtering targets are easily exchanged with sample holder thus allowing testing of deposited samples with high power density electron or ion beams. Boron carbide coatings were deposited on tungsten samples. Methods of increasing coating adhesion are described in the paper. 2 μm boron carbide coatings sustained 450 heating cycles from 100 to 900 C. Ion beam tests have shown satisfactory results.

  16. Beam imaging sensor

    Energy Technology Data Exchange (ETDEWEB)

    McAninch, Michael D.; Root, Jeffrey J.

    2016-07-05

    The present invention relates generally to the field of sensors for beam imaging and, in particular, to a new and useful beam imaging sensor for use in determining, for example, the power density distribution of a beam including, but not limited to, an electron beam or an ion beam. In one embodiment, the beam imaging sensor of the present invention comprises, among other items, a circumferential slit that is either circular, elliptical or polygonal in nature.

  17. Microdosimetry of high LET therapeutic beams

    International Nuclear Information System (INIS)

    Experimental microdosimetry of high LET therapeutic beams were presented. The cyclotron produced fast neutron beams at IMS, TAMVEC and NRL, a reactor fast neutron at YAYOI, a proctor beam at Harvard and a pion beam at TRIUMF are included. Measurements were performed with a conventional tissue equivalent spherical proportional counter with a logarithmic amplifier which made the recording and analysis quite simple. All the energy deposition spectra were analysed in the conventional manner and anti y F, anti y D as well as anti y D* were calculated. The spectra and their mean lineal energies showed wide variations, depending on the particle type, energy, position in phantom. Fractional contribution of elemental particles ( electron, muon, pion, proton, alpha and so on) to the total dose were analysed. For fast neutron beams, the y spectra stayed almost constant at any depth along the central axis in the phantom. The y spectra of proton beam changed slightly along the depth. On the other side, the y spectra of pion beam change drastically in the phantom between plateau and dose peak region. A novel technique of time-of-flight microdosimetry was employed, which made it possible to separate the fractional contribution of contaminant electrons and muons out of pions. Finally, a map of the radiation quality for all the beams is presented and its significances are discussed. (author)

  18. 日盲型紫外探测系滤光膜的研制%Design and Fabrication of Visible-blind UV Detectors System Filter

    Institute of Scientific and Technical Information of China (English)

    闫昊; 付秀华; 郑爽

    2012-01-01

    According to the special requirements of blind area of uv detection system, HfO2, Mgf2 and IGS1 three kinds of high and low index material combination forms was selected. The monitoring method was adopted in the JCS1 base by using electron beam, ion auxiliary deposition and quartz crystal oscillation technology. This paper studied the HfO2 and Mgf2 film deposition technology electron beam, optimized the HfO2 in different materials combination of the deposition process, and solved the basement membrane layer and adhesion; Meanwhile improve the crack phenomenon with the thickness variation of Mgf2. The 0.24-28μm ultraviolet, thin film deposition blind band process and spectral character-isitics problem.%针对紫外探测系统利用紫外日盲区的特殊要求,选取HfO2和Mgf2、JGS1三种高低折射率材料组合形式.在石英基底上,采用电子束和离子辅助沉积技术及石英晶体振荡监控厚度方法.对HfO2和JGS1膜电子束沉积工艺进行了研究,对HfO2与不同材料组合的沉积工艺进行了优化,解决了膜层与基底之间附着力的问题,同时改善了Mgf2膜随厚度变化易的龟裂现象.研究了0.24~0.28 μm紫外日盲波段薄膜的沉积工艺和光谱特性问题.

  19. The ATLAS Diamond Beam Monitor

    CERN Document Server

    Schaefer, Douglas; The ATLAS collaboration

    2015-01-01

    After the first three years of the LHC running the ATLAS experiment extracted it's pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to also install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes were assembled based on chemical vapour deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This talk will describe the lessons learned in construction and commissioning of the ATLAS x Diamond Beam Monitor (DBM). We will show results from the construction quality assurance tests, commissioning performance, including results from cosmic ray running in early 2015 and also expected first results from LHC run 2 collisions.

  20. Radiation-hard Beam Position Detector for Use in the Accelerator Dump Lines

    CERN Document Server

    Degtiarenko, Pavel; Popov, Vladimir

    2005-01-01

    Proper transport of the electron beam with over 0.5MW of power to the beam dump is a prerequisite for operations at Jefferson Lab. Operations has relied on imaging the beam on a beam viewer located at the entrance to the beam dump. The large beam size at the dump entrance, due to beam scattering in the experimental target, sometimes results in no observable image on the view-screen. Chemical vapor deposited silicon carbide (CVD) material with its large thermal conductivity and high melting point is well suited for surviving the thermal effects of beam exposure with this power density. We are exploring the CVD properties and how it can be used as a robust beam position monitor. Results of some beam tests with 0.5MW beams will be presented.

  1. A symplectic coherent beam-beam model

    International Nuclear Information System (INIS)

    We consider a simple one-dimensional model to study the effects of the beam-beam force on the coherent dynamics of colliding beams. The key ingredient is a linearized beam-beam kick. We study only the quadrupole modes, with the dynamical variables being the 2nd-order moments of the canonical variables q, p. Our model is self-consistent in the sense that no higher order moments are generated by the linearized beam-beam kicks, and that the only source of violation of symplecticity is the radiation. We discuss the round beam case only, in which vertical and horizontal quantities are assumed to be equal (though they may be different in the two beams). Depending on the values of the tune and beam intensity, we observe steady states in which otherwise identical bunches have sizes that are equal, or unequal, or periodic, or behave chaotically from turn to turn. Possible implications of luminosity saturation with increasing beam intensity are discussed. Finally, we present some preliminary applications to an asymmetric collider. 8 refs., 8 figs

  2. Literature in Focus Beta Beams: Neutrino Beams

    CERN Multimedia

    2009-01-01

    By Mats Lindroos (CERN) and Mauro Mezzetto (INFN Padova, Italy) Imperial Press, 2009 The beta-beam concept for the generation of electron neutrino beams was first proposed by Piero Zucchelli in 2002. The idea created quite a stir, challenging the idea that intense neutrino beams only could be produced from the decay of pions or muons in classical neutrino beams facilities or in future neutrino factories. The concept initially struggled to make an impact but the hard work by many machine physicists, phenomenologists and theoreticians over the last five years has won the beta-beam a well-earned position as one of the frontrunners for a possible future world laboratory for high intensity neutrino oscillation physics. This is the first complete monograph on the beta-beam concept. The book describes both technical aspects and experimental aspects of the beta-beam, providing students and scientists with an insight into the possibilities o...

  3. Telecommunication using muon beams

    Science.gov (United States)

    Arnold, Richard C.

    1976-01-01

    Telecommunication is effected by generating a beam of mu mesons or muons, varying a property of the beam at a modulating rate to generate a modulated beam of muons, and detecting the information in the modulated beam at a remote location.

  4. The beam dump tunnels

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    In these images workers are digging the tunnels that will be used to dump the counter-circulating beams. Travelling just a fraction under the speed of light, the beams at the LHC will each carry the energy of an aircraft carrier travelling at 12 knots. In order to dispose of these beams safely, a beam dump is used to extract the beam and diffuse it before it collides with a radiation shielded graphite target.

  5. Parabolic scaling beams.

    Science.gov (United States)

    Gao, Nan; Xie, Changqing

    2014-06-15

    We generalize the concept of diffraction free beams to parabolic scaling beams (PSBs), whose normalized intensity scales parabolically during propagation. These beams are nondiffracting in the circular parabolic coordinate systems, and all the diffraction free beams of Durnin's type have counterparts as PSBs. Parabolic scaling Bessel beams with Gaussian apodization are investigated in detail, their nonparaxial extrapolations are derived, and experimental results agree well with theoretical predictions.

  6. Ion beam diagnosis

    International Nuclear Information System (INIS)

    This report is an introduction to ion beam diagnosis. After a short description of the most important ion beam parameters measurements of the beam current by means of Faraday cups, calorimetry, and beam current transformers and measurements of the beam profile by means of viewing screens, profile grids and scanning devices, and residual gas ionization monitors are described. Finally measurements in the transverse and longitudinal phase space are considered. (HSI)

  7. Beam induced heating

    CERN Document Server

    Salvant, B; Arduini, G; Assmann, R; Baglin, V; Barnes, M J; Baudrenghien, P; Bracco, C; Bruce, R; Bertarelli, A; Carra, F; Cattenoz, G; Caspers, F; Claudet, S; Day, H; Esteban Mueller, J; Gentini, L; Goddar, B; Grudiev, A; Henrist, B; Jones, R; Lanza, G; Lari, L; Mastoridis, T; Métral, E; Mounet, N; Nougaret, J L; Piguiet, A M; Redaelli, S; Roncarolo, F; Rumolo, G; Sapinski, M; Shaposhinkova, E; Tavian, L; Timmins, M; Uythoven, J; Vidal, A; Wollmann, D

    2012-01-01

    In 2011, the rapid increase of the luminosity performance of LHC came at the expense of increased temperature and pressure readings on several near-beam LHC equipments. In some cases, this beam induced heating was suspected to cause beam dumps and even degradation of the equipment. This contribution aims at gathering the observations of beam induced heating due to beam coupling impedance, their current level of understanding and possible actions that could be implemented during the winter stop 2011-2012.

  8. Recent progress in molecule modification with heavy ion beam irradiation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The research into heavy ion beam biology started in the 1960s, and so far it has become an important interdisciplinary study. Heavy ion beam is more suitable for molecule modification than other sorts of radiation, for it has many superiorities such as the energy transfer effect and the mass deposition effect. Molecule modification with heavy ion beam irradiation can be applied to developing new medicines and their precursors, genetic engineering, protein engi neering, outer space radiobiology, etc. Retrospect and prospect of the research and development of molecule modifica tion with heavy ion beam irradiation are given.

  9. Performance of the ATLAS Beam Diagnostic Systems

    CERN Document Server

    Macek, B; The ATLAS collaboration

    2010-01-01

    The beam diagnostic system of the ATLAS detector comprises two diamond sensor based devices. The innovative Beam Conditions Monitor (BCM) is aimed at resolving background from collision particles by sub-ns time-of-flight measurement. The Beam Loss Monitor (BLM) is a clone of the LHC machine BLM system, replacing ionization chambers with diamond sensors. BCM uses 16 1x1 cm2 0.5 mm thick polycrystalline chemical vapor deposition (pCVD) diamond sensors arranged in 8 positions at a radius r ≈ 55 mm, ~1.9 m up- and down-stream the interaction point. Time measurements at 2.56 GHz sampling rate are performed to distinguish between collision and shower particles from beam incidents. A FPGA-based readout system performs real-time data analysis and interfaces the results to ATLAS and the LHC beam permit system. The diamond sensors, the detector modules and their readout system are described. Results of performance with LHC beams of increasing energy and intensity including timing separation of collisions from beam re...

  10. WEBEXPIR: Windowless target electron beam experimental irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dierckx, Marc [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium); Schuurmans, Paul [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium)], E-mail: paul.schuurmans@sckcen.be; Heyse, Jan; Rosseel, Kris; Tichelen, Katrien Van [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium); Nactergal, Benoit; Vandeplassche, Dirk [IBA, Chemin du Cyclotron 3, BE-1348 Louvain-la-Neuve (Belgium); Aoust, Thierry [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium); Abs, Michel [IBA, Chemin du Cyclotron 3, BE-1348 Louvain-la-Neuve (Belgium); Guertin, Arnaud; Buhour, Jean-Michel; Cadiou, Arnaud [SUBATECH, Ecole des Mines, 4 rue Alfred Kastler, BP 20722, F-44307 Nantes cedex (France); Abderrahim, Hamid Ait [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium)

    2008-06-15

    The windowless target electron beam experimental irradiation (WEBEXPIR) program was set-up as part of the MYRRHA/XT-ADS R and D effort on the spallation target design to investigate the interaction of a proton beam with a liquid lead-bismuth eutectic (LBE) free surface. In particular, possible free surface distortion or shockwave effects in nominal conditions and during sudden beam on/off transient situations, as well as possible enhanced evaporation were assessed. An experiment was conceived at the IBA TT-1000 Rhodotron, where a 7 MeV electron beam was used to simulate the high power deposition at the MYRRHA/XT-ADS LBE free surface. The geometry and the LBE flow characteristics in the WEBEXPIR set-up were made as representative as possible of the actual situation in the MYRRHA/XT-ADS spallation target. Irradiation experiments were carried out at beam currents of up to 10 mA, corresponding to 40 times the nominal beam current necessary to reproduce the MYRRHA/XT-ADS conditions. Preliminary analyses show that the WEBEXPIR free surface flow was not disturbed by the interaction with the electron beam and that vacuum conditions stayed well within the design specifications.

  11. WEBEXPIR: Windowless target electron beam experimental irradiation

    Science.gov (United States)

    Dierckx, Marc; Schuurmans, Paul; Heyse, Jan; Rosseel, Kris; Van Tichelen, Katrien; Nactergal, Benoit; Vandeplassche, Dirk; Aoust, Thierry; Abs, Michel; Guertin, Arnaud; Buhour, Jean-Michel; Cadiou, Arnaud; Abderrahim, Hamid Aït

    2008-06-01

    The windowless target electron beam experimental irradiation (WEBEXPIR) program was set-up as part of the MYRRHA/XT-ADS R&D effort on the spallation target design to investigate the interaction of a proton beam with a liquid lead-bismuth eutectic (LBE) free surface. In particular, possible free surface distortion or shockwave effects in nominal conditions and during sudden beam on/off transient situations, as well as possible enhanced evaporation were assessed. An experiment was conceived at the IBA TT-1000 Rhodotron, where a 7 MeV electron beam was used to simulate the high power deposition at the MYRRHA/XT-ADS LBE free surface. The geometry and the LBE flow characteristics in the WEBEXPIR set-up were made as representative as possible of the actual situation in the MYRRHA/XT-ADS spallation target. Irradiation experiments were carried out at beam currents of up to 10 mA, corresponding to 40 times the nominal beam current necessary to reproduce the MYRRHA/XT-ADS conditions. Preliminary analyses show that the WEBEXPIR free surface flow was not disturbed by the interaction with the electron beam and that vacuum conditions stayed well within the design specifications.

  12. Fabrication of Superconducting Mo/Cu Bilayers Using Ion-Beam-Assisted e-Beam Evaporation

    Science.gov (United States)

    Jaeckel, Felix T.; Kripps, Kari L.; Morgan, Kelsey M.; Zhang, Shuo; McCammon, Dan

    2016-08-01

    Superconducting/normal metal bilayers with tunable transition temperature are a critical ingredient to the fabrication of high-performance transition edge sensors. Popular material choices include Mo/Au and Mo/Cu, which exhibit good environmental stability and provide low resistivity films to achieve adequate thermal conductivity. The deposition of high-quality Mo films requires sufficient adatom mobility, which can be provided by energetic ions in sputter deposition or by heating the substrate in an e-beam evaporation process. The bilayer T_c depends sensitively on the exact deposition conditions of the Mo layer and the superconducting/normal metal interface. Because the individual contributions (strain, crystalline structure, contamination) are difficult to disentangle and control, reproducibility remains a challenge. Recently, we have demonstrated that low-energy ion-beam-assisted e-beam evaporation offers an alternative route to reliably produce high-quality Mo films without the use of substrate heating. The energy and momentum delivered by the ion beam provides an additional control knob to tune film properties such as resistivity and stress. In this report we describe modifications made to the commercial end-Hall ion source to avoid iron contamination allowing us to produce superconducting Mo films. We show that the ion beam is effective at enhancing the bilayer interface transparency and that bilayers can be further tuned towards reduced T_c and higher conductivity by vacuum annealing.

  13. Atmospheric Deposition Modeling Results

    Data.gov (United States)

    U.S. Environmental Protection Agency — This asset provides data on model results for dry and total deposition of sulfur, nitrogen and base cation species. Components include deposition velocities, dry...

  14. Electro-Deposition Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The electro-deposition laboratory can electro-deposit various coatings onto small test samples and bench level prototypes. This facility provides the foundation for...

  15. Calcium Pyrophosphate Deposition (CPPD)

    Science.gov (United States)

    ... Patient / Caregiver Diseases & Conditions Calcium Pyrophosphate Deposition (CPPD) Calcium Pyrophosphate Deposition (CPPD) Fast Facts The risk of ... young people, too. Proper diagnosis depends on detecting calcium pyrophosphate crystals in the fluid of an affected ...

  16. Potential biomedical applications of ion beam technology

    Science.gov (United States)

    Banks, B. A.; Weigand, A. J.; Babbush, C. A.; Vankampen, C. L.

    1976-01-01

    Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

  17. Pyramid beam splitter

    Science.gov (United States)

    McKeown, Mark H.; Beason, Steven C.; Fairer, George

    1992-01-01

    The apparatus of the present invention provides means for obtaining accurate, dependable, measurement of bearings and directions for geologic mapping in subterranean shafts, such as, for example, nuclear waste storage investigations. In operation, a laser beam is projected along a reference bearing. A pyramid is mounted such that the laser beam is parallel to the pyramid axis and can impinge on the apex of the pyramid thus splitting the beam several ways into several beams at right angles to each other and at right angles to the reference beam. The pyramid is also translatable and rotatable in a plane perpendicular to the reference beam.

  18. Low current beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Saint, A.; Laird, J.S.; Bardos, R.A.; Legge, G.J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Nishijima, T.; Sekiguchi, H. [Electrotechnical Laboratory, Tsukuba (Japan).

    1993-12-31

    Since the development of Scanning Transmission Microscopy (STIM) imaging in 1983 many low current beam techniques have been developed for the scanning (ion) microprobe. These include STIM tomography, Ion Beam Induced Current, Ion Beam Micromachining and Microlithography and Ionoluminense. Most of these techniques utilise beam currents of 10{sup -15} A down to single ions controlled by beam switching techniques This paper will discuss some of the low beam current techniques mentioned above, and indicate, some of their recent applications at MARC. A new STIM technique will be introduced that can be used to obtain Z-contrast with STIM resolution. 4 refs., 3 figs.

  19. Laser-Focused Atomic Deposition for Nanascale Grating

    Institute of Scientific and Technical Information of China (English)

    MA Yan; LI Tong-Bao; WU Wen; XIAO Yi-Li; ZHANG Ping-Ping; GONG Wei-Gang

    2011-01-01

    Laser-focused atomic deposition is a technique with which nearly resonant light is used to pattern an atom beam.To solve the problem that the result of laser-cooled atoms cannot be monitored during the 30-rmin depositing time,we present a three-hole mechanically precollimated aperture apparatus.A 425 nm laser light standing wave is used to focus a beam of chromium atoms to fabricate the nanoscale grating. The period of the grating is 213(+-)0.1 nm,the height is 4nm and the full width at half miximum is 64(+-)6nm.

  20. Beam Dynamics and Beam Losses - Circular Machines

    CERN Document Server

    Kain, V

    2016-01-01

    A basic introduction to transverse and longitudinal beam dynamics as well as the most relevant beam loss mechanisms in circular machines will be presented in this lecture. This lecture is intended for physicists and engineers with little or no knowledge of this subject.

  1. Beam-beam issues in asymmetric colliders

    Energy Technology Data Exchange (ETDEWEB)

    Furman, M.A.

    1992-07-01

    We discuss generic beam-beam issues for proposed asymmetric e{sup +}- e{sup -} colliders. We illustrate the issues by choosing, as examples, the proposals by Cornell University (CESR-B), KEK, and SLAC/LBL/LLNL (PEP-II).

  2. Effect of phonon-plasmon and surface plasmon polaritons on photoluminescence in quantum emitter and graphene deposited on polar crystals

    Science.gov (United States)

    Singh, Mahi R.; Brzozowski, Marek J.; Apter, Boris

    2016-09-01

    We investigate the light-matter interaction in a quantum emitter and metallic graphene flake (MGF) hybrid system deposited on a polar material. The coupling of surface plasmons in graphene and optical phonons in the polar material produces phonon-plasmon polaritons (PPPs). Similarly, couplings of photons with surface plasmons of graphene produce surface-plasmon polaritons (SPPs). Using the second quantized formulation for SPPs and PPPs interactions and density matrix method, we have calculated photoluminescence of the quantum emitters. It is found that when the exciton energy of the quantum emitter is in resonant with SPP and PPP energies, the photoluminescence in the quantum emitter are enhanced in the terahertz range. The enhancement is due to the transfer of SPP and PPP energies from the graphene flake to the quantum emitter. The energy transfer from graphene to the quantum emitter can be controlled by applying external pump lasers or stress and strain fields. These are interesting findings which can be used to fabricate switches and sensors.

  3. Beam Loss Patterns at the LHC Collimators Measurements & Simulations

    CERN Document Server

    Böhlen, Till Tobias

    2008-01-01

    The Beam Loss Monitoring (BLM) system of the Large Hadron Collider (LHC) detects particle losses of circulating beams and initiates an emergency extraction of the beam in case that the BLM thresholds are exceeded. This protection is required as energy deposition in the accelerator equipment due to secondary shower particles can reach critical levels; causing damage to the beam-line components and quenches of superconducting magnets. Robust and movable beam line elements, so-called collimators, are the aperture limitations of the LHC. Consequently, they are exposed to the excess of lost beam particles and their showers. Proton loss patterns at LHC collimators have to be determined to interpret the signal of the BLM detectors and to set adequate BLM thresholds for the protection of collimators and other equipment in case of unacceptably increased loss rates. The first part of this work investigates the agreement of BLM detector measurements with simulations for an LHC-like collimation setup. The setup consists ...

  4. Cryogenic Beam Screens for High-Energy Particle Accelerators

    CERN Document Server

    Baglin, V; Tavian, L; van Weelderen, R

    2013-01-01

    Applied superconductivity has become a key enabling technology for high-energy particle accelerators, thus making them large helium cryogenic systems operating at very low temperature. The circulation of high-intensity particle beams in these machines generates energy deposition in the first wall through different processes. For thermodynamic efficiency, it is advisable to intercept these beam-induced heat loads, which may be large in comparison with cryostat heat in-leaks, at higher temperature than that of the superconducting magnets of the accelerator, by means of beam screens located in the magnet apertures. Beam screens may also be used as part of the ultra-high vacuum system of the accelerator, by sheltering the gas molecules cryopumped on the beam pipe from impinging radiation and thus avoiding pressure runaway. Space being extremely tight in the magnet apertures, cooling of the long, slender beam screens also raises substantial problems in cryogenic heat transfer and fluid flow. We present sizing rule...

  5. Acid Deposition Phenomena

    International Nuclear Information System (INIS)

    Acid deposition, commonly known as acid rain, occurs when emissions from the combustion of fossil fuels and other industrial processes undergo complex chemical reactions in the atmosphere and fall to the earth as wet deposition (rain, snow, cloud, fog) or dry deposition (dry particles, gas). Rain and snow are already naturally acidic, but are only considered problematic when less than a ph of 5.0 The main chemical precursors leading to acidic conditions are atmospheric concentrations of sulfur dioxide (SO2) and nitrogen oxides (NOx). When these two compounds react with water, oxygen, and sunlight in the atmosphere, the result is sulfuric (H2SO4) and nitric acids (HNO3), the primary agents of acid deposition which mainly produced from the combustion of fossil fuel and from petroleum refinery. Airborne chemicals can travel long distances from their sources and can therefore affect ecosystems over broad regional scales and in locations far from the sources of emissions. According to the concern of petroleum ministry with the environment and occupational health, in this paper we will discussed the acid deposition phenomena through the following: Types of acidic deposition and its components in the atmosphere Natural and man-made sources of compounds causing the acidic deposition. Chemical reactions causing the acidic deposition phenomenon in the atmosphere. Factors affecting level of acidic deposition in the atmosphere. Impact of acid deposition. Procedures for acidic deposition control in petroleum industry

  6. Deposition, milling, and etching with a focused helium ion beam

    NARCIS (Netherlands)

    Alkemade, P.F.A.; Veldhoven, E. van

    2012-01-01

    The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

  7. Hemocompatibility of DLC coatings synthesized by ion beam assisted deposition

    Institute of Scientific and Technical Information of China (English)

    LI; Dejun

    2001-01-01

    [1]Gallagher, J. J., Simpson, J. A., Search for trapped electrons and a magnetic moment at Mars by Mariner IV, Science, 1965, 149: 1233—1239.[2]Russell, C. T., The magnetic field of Mars: Mars 3 evidence reexamined, Geophys. Res. Lett., 1978, 5: 81—86.[3]Riedler, W., Schwingenschun, K., Lichtenegger, H. et al., Interaction of solar wind with the planet Mars: Phobos 2 magnetic field observations, Planet. Space Sci., 1991, 39: 75—81.[4]Gringauz, K. I., What was known about the Martian magnetosphere before Phobos-2 mission, Planet. Space Sci., 1991, 39: 73—74.[5]Acuna, M. H., Connerney, J. E. P., Wasilewski, P. et al., Magnetic field and plasma observations at Mars: Initial results of the Mars global surveyor mission, Science, 1998, 279: 1676—1680.[6]Mohlmann, D., Riedler. W., Rustenbuch, J. et al., The question of an internal Martian magnetic field, Planet. Space Sci., 1991, 39: 83—88.[7]Shi, J. K., Liu, Z. X., Zhang, T. L., A theoretical study on the O+ ions of the Martian magnetosphere, Chin Astron Astrophys., 1999, 23: 377—383.[8]Rosenbauer, H., Shutte, N., Apathy, I. et al., Ions of Martian origin and plasma sheet in the Martian magnetotail: Initial results of TAUS experiment, Nature, 1989, 341: 612—614.[9]Lundin, R., Zakharov, A., Pelinen, R. et al., ASPERA/Phobos measurements of the ion outflow from the Martian ionosphere, Geophy. Res. Lett., 1990, 17: 873—876.[10]Verigin, M. I., Shutte, N. M., Galeev, A. A. et al., Ions of planetary origin in the Martian magnetosphere (Phobos 2 / TAUS experiment), Planet. Space Sci., 1991, 39: 131—137.[11]Lundin, R., Zakharov, A., Pelinen, R. et al., First measurements of the ionospheric plasma escape from Mars, Nature, 1989, 341: 609—612.[12]Lammer, H., Bauer, S. J., Nonthermal atmospheric escape from Mars and Titan, J. Geophys. Res., 1991, 96: 1819—1826.[13]Haider, S. A., O+ escape in the polar ion exosphere of Mars, Adv. Space Res., 1995, 16: 49—55.[14]Shi. J. K., Liu, Z. X., Zhang, T. L. et al., The influence of the intrinsic magnetic field on the distribution of O+ in Martian magnetosphere, Chinese Science Bulletin (in Chinese), 1997, 42(23): 1898—1901.[15]Luhmann, J. G., Brace, L. H., Near-Mars space, Rev. Geophys., 1991, 29: 121—140.[16]Luhmann, J. G., Schwingenschuh, K., A model of the magnetic ion environment of Mars, J. Geophys. Res., 1990, 95: 939—945.[17]Slavin, J. A., Schwingenschuh, K., Reidler, W. et al., The solar wind interaction with Mars: Mariner-4, Mars-2,3,5, and Phobos-2 observation of bow shock position and shape, J. Geophys. Res., 1991, 96: 11235—11241.[18]Eviater, A., Lencheek, A. M., Singer, S. F., Distribution of density in an ion-exosphere of a nonrotating planet, Phys. Fluids, 1964, 7: 1775—1779.

  8. Biomedical applications of radioactive nuclear beams

    International Nuclear Information System (INIS)

    Charged particles, such as protons and heavy ions, are increasingly used in cancer radiotherapy. With respect to the conventional treatment using photons or electrons, they offer the advantage of a better concentration of the dose deposition at a depth corresponding to the tumor location. Moreover, biological advantages of these highly ionizing particles have also been observed for the treatment of radioresistant tumors. Such treatments require high precision in the localization of the dose deposition which must coincide exactly with the tumor volume. The used of radioactive beams of β+ emitters, at several hundreds of MeV/u, combined with positron emission tomography provide radiotherapeutists with a unique tool which may be used either for diagnostic purposes, prior to the actual treatment (performed with a stable beam of higher intensity), or for on line controlled treatment if the necessary intensities (≅ 108 pps) become accessible in the future

  9. Laser-Beam Separator

    Science.gov (United States)

    Mcdermid, I. S.

    1984-01-01

    Train of prisms and optical stop separate fundamental beam of laser from second and higher order harmonics of beam produced in certain crystals and by stimulated Raman scattering in gases and liquids.

  10. Beam Loss in Linacs

    CERN Document Server

    Plum, M A

    2016-01-01

    Beam loss is a critical issue in high-intensity accelerators, and much effort is expended during both the design and operation phases to minimize the loss and to keep it to manageable levels. As new accelerators become ever more powerful, beam loss becomes even more critical. Linacs for H- ion beams, such as the one at the Oak Ridge Spallation Neutron Source, have many more loss mechanisms compared to H+ (proton) linacs, such as the one being designed for the European Spallation Neutron Source. Interesting H- beam loss mechanisms include residual gas stripping, H+ capture and acceleration, field stripping, black-body radiation and the recently discovered intra-beam stripping mechanism. Beam halo formation, and ion source or RF turn on/off transients, are examples of beam loss mechanisms that are common for both H+ and H- accelerators. Machine protection systems play an important role in limiting the beam loss.

  11. Space charge dominated beams

    International Nuclear Information System (INIS)

    After an introductory section on the relationship between emittance and beam Coulomb energy we discuss the properties of space charge dominated beams in progressive steps: from uniformly charged bunched beams to non-uniformly charged beams to correlation effects between particles (simulation beams or 'crystalline' beams). A practical application can be found in the beam dynamics of a high-current injector. The concept of correlation energy is of practical interest in computer simulation of high-brilliance beams, where one deals with an artificially enhanced two-particle Coulomb energy, if many real particles are combined into one simulation super-particle. This can be a source of non-physical emittance growth. (orig./HSI)

  12. High energy beam lines

    Science.gov (United States)

    Marchetto, M.; Laxdal, R. E.

    2014-01-01

    The ISAC post accelerator comprises an RFQ, DTL and SC-linac. The high energy beam lines connect the linear accelerators as well as deliver the accelerated beams to two different experimental areas. The medium energy beam transport (MEBT) line connects the RFQ to the DTL. The high energy beam transport (HEBT) line connects the DTL to the ISAC-I experimental stations (DRAGON, TUDA-I, GPS). The DTL to superconducting beam (DSB) transport line connects the ISAC-I and ISAC-II linacs. The superconducting energy beam transport (SEBT) line connects the SC linac to the ISAC-II experimental station (TUDA-II, HERACLES, TIGRESS, EMMA and GPS). All these lines have the function of transporting and matching the beams to the downstream sections by manipulating the transverse and longitudinal phase space. They also contain diagnostic devices to measure the beam properties.

  13. Layer-by-layer pattern propagtion and pulsed laser deposition

    OpenAIRE

    Westerhoff, F.; Brendel, L.; Wolf, D. E.

    2001-01-01

    In this article kinetic Monte Carlo simulations for molecular beam epitaxy (MBE) and pulsed laser depositon (PLD) are compared. It will be shown that an optimal pattern conservation during MBE is achieved for a specific ratio of diffusion to deposition rate. Further on pulsed laser deposition is presented as an alternative way to control layer by layer growth. First results concerning the island density in the submonolayer regime are shown.

  14. High Energy Beam Impacts on Beam Intercepting Devices: Advanced Numerical Methods and Experimental Set-up

    CERN Document Server

    Bertarelli, A; Carra, F; Cerutti, F; Dallocchio, A; Mariani, N; Timmins, M; Peroni, L; Scapin, M

    2011-01-01

    Beam Intercepting Devices are potentially exposed to severe accidental events triggered by direct impacts of energetic particle beams. State-of-the-art numerical methods are required to simulate the behaviour of affected components. A review of the different dynamic response regimes is presented, along with an indication of the most suited tools to treat each of them. The consequences on LHC tungsten collimators of a number of beam abort scenarios were extensively studied, resorting to a novel category of numerical explicit methods, named Hydrocodes. Full shower simulations were performed providing the energy deposition distribution. Structural dynamics and shock wave propagation analyses were carried out with varying beam parameters, identifying important thresholds for collimator operation, ranging from the onset of permanent damage up to catastrophic failure. Since the main limitation of these tools lies in the limited information available on constitutive material models under extreme conditions, a dedica...

  15. High Energy Beam Impacts on Beam Intercepting Devices: Advanced Numerical Methods and Experimental Set-Up

    CERN Document Server

    Bertarelli, A; Carra, F; Cerutti, F; Dallocchio, A; Mariani, N; Timmins, M; Peroni, L; Scapin, M

    2011-01-01

    Beam Intercepting Devices are potentially exposed to severe accidental events triggered by direct impacts of energetic particle beams. State-of-the-art numerical methods are required to simulate the behaviour of affected components. A review of the different dynamic response regimes is presented, along with an indication of the most suited tools to treat each of them. The consequences on LHC tungsten collimators of a number of beam abort scenarios were extensively studied, resorting to a novel category of numerical explicit methods, named Hydrocodes. Full shower simulations were performed providing the energy deposition distribution. Structural dynamics and shock wave propagation analyses were carried out with varying beam parameters, identifying important thresholds for collimator operation, ranging from the onset of permanent damage up to catastrophic failure. Since the main limitation of these tools lies in the limited information available on constitutive material models under extreme conditions, a dedica...

  16. Proton beam writing

    OpenAIRE

    Frank Watt; Breese, Mark B H; Bettiol, Andrew A; Jeroen A. van Kan

    2007-01-01

    Proton beam (p-beam) writing is a new direct-writing process that uses a focused beam of MeV protons to pattern resist material at nanodimensions. The process, although similar in many ways to direct writing using electrons, nevertheless offers some interesting and unique advantages. Protons, being more massive, have deeper penetration in materials while maintaining a straight path, enabling p-beam writing to fabricate three-dimensional, high aspect ratio structures with vertical, smooth side...

  17. Welding by laser beam

    International Nuclear Information System (INIS)

    A laser which does not require a vacuum and the beam from which can be projected over a distance without loss of power is sited outside a welding zone and the beam projected through a replaceable laser transparent window. The window is designed and shaped to facilitate access of the beam of workpiece items to be welded in containment. Either the workpiece or the laser beam may be moved during welding. (author)

  18. Slow kaon beams

    International Nuclear Information System (INIS)

    A short description is given of considerations for the design of low-momentum kaon beam lines. Relevant data for the performance of seven existing and decommissioned slow kaon beams are presented. For single-stage separated beams the observed ratio all/K- is greater than 50 for momenta less than 500 MeV/c. We recommend a two-stage separated beam with perhaps an upstream cleanup section for maximal purity

  19. Beam Dynamics for ARIA

    CERN Document Server

    Ekdahl, Carl

    2015-01-01

    Beam dynamics issues are assessed for a new linear induction electron accelerator being designed for flash radiography of large explosively driven hydrodynamic experiments. Special attention is paid to equilibrium beam transport, possible emittance growth, and beam stability. It is concluded that a radiographic quality beam will be produced possible if engineering standards and construction details are equivalent to those on the present radiography accelerators at Los Alamos.

  20. PARTICLE BEAM TRACKING CIRCUIT

    Science.gov (United States)

    Anderson, O.A.

    1959-05-01

    >A particle-beam tracking and correcting circuit is described. Beam induction electrodes are placed on either side of the beam, and potentials induced by the beam are compared in a voltage comparator or discriminator. This comparison produces an error signal which modifies the fm curve at the voltage applied to the drift tube, thereby returning the orbit to the preferred position. The arrangement serves also to synchronize accelerating frequency and magnetic field growth. (T.R.H.)

  1. Electron beam focusing system

    Energy Technology Data Exchange (ETDEWEB)

    Dikansky, N.; Nagaitsev, S.; Parkhomchuk, V.

    1997-09-01

    The high energy electron cooling requires a very cold electron beam. Thus, the electron beam focusing system is very important for the performance of electron cooling. A system with and without longitudinal magnetic field is presented for discussion. Interaction of electron beam with the vacuum chamber as well as with the background ions and stored antiprotons can cause the coherent electron beam instabilities. Focusing system requirements needed to suppress these instabilities are presented.

  2. Beam Dynamics for ARIA

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Carl August Jr. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2014-10-14

    Beam dynamics issues are assessed for a new linear induction electron accelerator being designed for flash radiography of large explosively driven hydrodynamic experiments. Special attention is paid to equilibrium beam transport, possible emittance growth, and beam stability. It is concluded that a radiographic quality beam will be produced possible if engineering standards and construction details are equivalent to those on the present radiography accelerators at Los Alamos.

  3. A simple electron-beam lithography system

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Madsen, Dorte Nørgaard; Bøggild, Peter

    2005-01-01

    of the column of a scanning electron microscope (SEM). The system can easily be mounted on most standard SEM systems. The tested setup allows an area of up to about 50 x 50 pm to be scanned, if the upper limit for acceptable reduction of the SEM resolution is set to 10 run. We demonstrate how the EBL system can...... be used to write three-dimensional nanostructures by electron-beam deposition. (C) 2004 Elsevier B.V. All rights reserved....

  4. Beams 92: Proceedings

    International Nuclear Information System (INIS)

    This report contains papers on the following topics: Ion beam papers; electron beam, bremsstrahlung, and diagnostics papers; radiating Z- pinch papers; microwave papers; electron laser papers; advanced accelerator papers; beam and pulsed power applications papers; pulsed power papers; and these papers have been indexed separately elsewhere

  5. Accelerating nondiffracting beams

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Shaohui; Li, Manman; Yao, Baoli, E-mail: yaobl@opt.ac.cn; Yu, Xianghua; Lei, Ming; Dan, Dan; Yang, Yanlong; Min, Junwei; Peng, Tong

    2015-06-05

    We present a set of beams which combine the properties of accelerating beams and (conventional) diffraction-free beams. These beams can travel along a desired trajectory while keeping an approximately invariant transverse profile, which may be (higher-order) Bessel-, Mathieu- or parabolic-nondiffracting-like beams, depending on the initial complex amplitude distribution. A possible application of these beams presented here may be found in optical trapping field. For example, a higher-order Bessel-like beam, which has a hollow (transverse) pattern, is suitable for guiding low-refractive-index or metal particles along a curve. - Highlights: • A set of beams having arbitrary trajectories of accelerating and nondiffracting behaviors are generalized and presented. • Bessel-like accelerating beams are generalized to the higher-order (hollow) version. • Mathieu-like accelerating beams and parabolic-nondiffracting-like accelerating beams are presented. • A possible application of these beams may be found in optical trapping and guiding of particles.

  6. An Electromagnetic Beam Converter

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to an electromagnetic beam converter and a method for conversion of an input beam of electromagnetic radiation having a bell shaped intensity profile a(x,y) into an output beam having a prescribed target intensity profile l(x',y') based on a further development...

  7. Klystron beam bunching

    International Nuclear Information System (INIS)

    A detailed description of electron-beam bunching phenomena in klystrons is presented. Beam harmonic current is defined, both space-charge and ballistic bunching are analyzed, Ramo's theorem is used to describe how a bunched beam drives a cavity, and a general cavity model including external coupling is provided. (author)

  8. Reactive sputtering deposition of SiO2 thin films

    Directory of Open Access Journals (Sweden)

    IVAN RADOVIC

    2008-01-01

    Full Text Available SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6–2×10-4 mbar and of the ion beam current on the target (1.67–6.85 mA. The argon partial pressure during operation of the ion gun was 1×10-3 mbar. The substrate temperature was held at 550 °C and the films were deposited to a thickness of 12.5–150 nm, at a rate from 0.0018–0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis. Reactive sputtering was proved to be efficient for the deposition of silica at 550 °C, an oxygen partial pressure of 2×10-4 mbar (ion beam current on the target of 5 mA or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6×10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

  9. Airfoil deposition model

    Science.gov (United States)

    Kohl, F. J.

    1982-01-01

    The methodology to predict deposit evolution (deposition rate and subsequent flow of liquid deposits) as a function of fuel and air impurity content and relevant aerodynamic parameters for turbine airfoils is developed in this research. The spectrum of deposition conditions encountered in gas turbine operations includes the mechanisms of vapor deposition, small particle deposition with thermophoresis, and larger particle deposition with inertial effects. The focus is on using a simplified version of the comprehensive multicomponent vapor diffusion formalism to make deposition predictions for: (1) simple geometry collectors; and (2) gas turbine blade shapes, including both developing laminar and turbulent boundary layers. For the gas turbine blade the insights developed in previous programs are being combined with heat and mass transfer coefficient calculations using the STAN 5 boundary layer code to predict vapor deposition rates and corresponding liquid layer thicknesses on turbine blades. A computer program is being written which utilizes the local values of the calculated deposition rate and skin friction to calculate the increment in liquid condensate layer growth along a collector surface.

  10. Cryogenic Beam Loss Monitors for the Superconducting Magnets of the LHC

    CERN Document Server

    Bartosik, MR; Sapinski, M; Kurfuerst, C; Griesmayer, E; Eremin, V; Verbitskaya, E

    2014-01-01

    The Beam Loss Monitor detectors close to the interaction points of the Large Hadron Collider are currently located outside the cryostat, far from the superconducting coils of the magnets. In addition to their sensitivity to lost beam particles, they also detect particles coming from the experimental collisions, which do not contribute significantly to the heat deposition in the superconducting coils. In the future, with beams of higher energy and brightness resulting in higher luminosity, distinguishing between these interaction products and dangerous quench-provoking beam losses from the primary proton beams will be challenging. The system can be optimised by locating beam loss monitors as close as possible to the superconducting coils, inside the cold mass in a superfluid helium environment, at 1.9 K. The dose then measured by such Cryogenic Beam Loss Monitors would more precisely correspond to the real dose deposited in the coil. The candidates under investigation for such detectors are based on p+-n-n+ si...

  11. Relativistic-electron-beam-induced fusion

    International Nuclear Information System (INIS)

    The interaction of a focussed relativistic electron beam (REB) with a solid target has been investigated. The beam performance of the REB generator ''REIDEN III'' is 500 kV, 80 kA at a focal spot of 1.5 mm diameter, which gives 2X1012Wcm-2. High-temperature dense plasmas are produced at the focal point on the solid target. It expands radially along the target surface. The measured electron temperature (1-2 keV) and the ion energy (approximately 2 keV) endorse the existence of enhanced REB absorption in a dense plasma. The neutrons observed (approximately 109/shot, 2.45 MeV) in the case of a CD2 target are of thermonuclear origin and compatible with the plasma temperature. On the assumption that the electron beam of radius r is stopped at a length Λ and deposits its energy, the energy balance equation is approximately given by πr2Λn1kT=IVtau. On inserting beam current I, voltage V, pulse time tau and density n1, the energy deposition distance Λ can be estimated. For a fusion temperature of 1 keV, the distance Λ must be two orders of magnitude shorter than the simple classical stopping length, which seems to be due to non-linear coupling. A pellet implosion experiment of a multi-structure target has been performed. (author)

  12. Pushing the limits - beam

    CERN Document Server

    Métral, E

    2011-01-01

    Many collective effects were observed in 2010, first when the intensity per bunch was increased and subsequently when the number of bunches was pushed up and the bunch spacing was reduced. After a review of the LHC performance during the 2010 run, with a particular emphasis on impedances and related single-beam coherent instabilities, but mentioning also beam-beam and electron cloud issues, the potential of the LHC for 2011 will be discussed. More specifically, the maximum bunch/beam intensity and the maximum beam brightness the LHC should be able to swallow will be compared to what the injectors can provide.

  13. The effects of injection beam parameters and foil scattering for CSNS/RCS

    CERN Document Server

    Huang, Ming-Yang; Qiu, Jing; Wang, Na; Xu, Shou-Yan

    2012-01-01

    The China Spallation Neutron Source (CSNS) uses H- stripping and phase space painting method to fill large ring acceptance with the linac beam of small emittance. The dependence of the painting beam on the injection beam parameters was studied for the Rapid Cycling Synchrotron (RCS) of CSNS. The injection processes for different momentum spread, rms emittance of the injection beam, injection beam matching were simulated, then the beam losses, 99% and rms emittances were obtained and the optimized ranges of injection beam parameters were given. The interaction between the H- beam and the stripping foil was studied and the foil scattering was simulated. Then, the stripping efficiency was calculated and the suitable thickness of the stripping foil was obtained. The energy deposition on the foil and the beam losses due to the foil scattering were also studied.

  14. Test Beam Results of a 3D Diamond Detector

    CERN Document Server

    Dunser, Marc

    2015-01-01

    3D pixel technology has been used successfully in the past with silicon detectors for tracking applications. Recently, a first prototype of the same 3D technology has been produced on a chemical vapour deposited single-crystal diamond sensor. This device has been subsequently tested in a beam test at CERN’s SPS accelerator in a beam of 120 GeV protons. Details on the production and results of testbeam data are presented.

  15. Testing beam-induced quench levels of LHC superconducting magnets

    Science.gov (United States)

    Auchmann, B.; Baer, T.; Bednarek, M.; Bellodi, G.; Bracco, C.; Bruce, R.; Cerutti, F.; Chetvertkova, V.; Dehning, B.; Granieri, P. P.; Hofle, W.; Holzer, E. B.; Lechner, A.; Nebot Del Busto, E.; Priebe, A.; Redaelli, S.; Salvachua, B.; Sapinski, M.; Schmidt, R.; Shetty, N.; Skordis, E.; Solfaroli, M.; Steckert, J.; Valuch, D.; Verweij, A.; Wenninger, J.; Wollmann, D.; Zerlauth, M.

    2015-06-01

    In the years 2009-2013 the Large Hadron Collider (LHC) has been operated with the top beam energies of 3.5 and 4 TeV per proton (from 2012) instead of the nominal 7 TeV. The currents in the superconducting magnets were reduced accordingly. To date only seventeen beam-induced quenches have occurred; eight of them during specially designed quench tests, the others during injection. There has not been a single beam-induced quench during normal collider operation with stored beam. The conditions, however, are expected to become much more challenging after the long LHC shutdown. The magnets will be operating at near nominal currents, and in the presence of high energy and high intensity beams with a stored energy of up to 362 MJ per beam. In this paper we summarize our efforts to understand the quench levels of LHC superconducting magnets. We describe beam-loss events and dedicated experiments with beam, as well as the simulation methods used to reproduce the observable signals. The simulated energy deposition in the coils is compared to the quench levels predicted by electrothermal models, thus allowing one to validate and improve the models which are used to set beam-dump thresholds on beam-loss monitors for run 2.

  16. Cluster ion beam evaporation

    International Nuclear Information System (INIS)

    Cluster ions can be made by the supercooling due to adiabatic expansion of substances to be vaporized which are ejected from a nozzle. This paper is described on the recent progress of studies concerning the cluster beam. The technique of cluster ion beam has been applied for the studies of thermonuclear plasma, the fabrication of thin films, crystal growth and electronic devices. The density of cluster ion beam is larger than that of atomic ion beam, and the formation of thin films can be easily done in high vacuum. This method is also useful for epitaxial growth. Metallic vapour cluster beam was made by the help of jetting rare gas beam. Various beam sources were developed. The characteristics of these sources were measured and analyzed. (Kato, T.)

  17. Molecule-by-Molecule Writing Using a Focused Electron Beam

    DEFF Research Database (Denmark)

    Van Dorp, Willem F.; Zhang, Xiaoyan; Feringa, Ben L.;

    2012-01-01

    on graphene can be followed molecule-by-molecule with FEBID. The results show that mechanisms that are inherent to the process inhibit a further increase in control over the process. Hence, our results present the resolution limit of (electron) optical lithography techniques. The writing of isolated...... atoms also be written with an electron beam? We verify this with focused electron-beam-induced deposition (FEBID), a direct-write technique that has the current record for the smallest feature written by (electron) optical lithography. We show that the deposition of an organometallic precursor...

  18. Iridium wire grid polarizer fabricated using atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Knez Mato

    2011-01-01

    Full Text Available Abstract In this work, an effective multistep process toward fabrication of an iridium wire grid polarizer for UV applications involving a frequency doubling process based on ultrafast electron beam lithography and atomic layer deposition is presented. The choice of iridium as grating material is based on its good optical properties and a superior oxidation resistance. Furthermore, atomic layer deposition of iridium allows a precise adjustment of the structural parameters of the grating much better than other deposition techniques like sputtering for example. At the target wavelength of 250 nm, a transmission of about 45% and an extinction ratio of 87 are achieved.

  19. Colliding Crystalline Beams

    International Nuclear Information System (INIS)

    The understanding of crystalline beams has advanced to the point where one can now, with reasonable confidence, undertake an analysis of the luminosity of colliding crystalline beams. Such a study is reported here. It is necessary to observe the criteria, previously stated, for the creation and stability of crystalline beams. This requires, firstly, the proper design of a lattice. Secondly, a crystal must be formed, and this can usually be done at various densities. Thirdly, the crystals in a colliding-beam machine are brought into collision. We study all of these processes using the molecular dynamics (MD) method. The work parallels what was done previously, but the new part is to study the crystal-crystal interaction in collision. We initially study the zero-temperature situation. If the beam-beam force (or equivalent tune shift) is too large then over-lapping crystals can not be created (rather two spatially separated crystals are formed). However, if the beam-beam force is less than but comparable to that of the space-charge forces between the particles, we find that overlapping crystals can be formed and the beam-beam tune shift can be of the order of unity. Operating at low but non-zero temperature can increase the luminosity by several orders of magnitude over that of a usual collider. The construction of an appropriate lattice, and the development of adequately strong coding, although theoretically achievable, is a challenge in practice

  20. Beam-beam effect seen through forced vibration

    International Nuclear Information System (INIS)

    In electron accelerator, tune is measured by giving beam transverse forced vibration caused by RF frequency. It is well known that beam-beam parameter can be measured if beam-beam interaction exists. Generally, small value is chosen as the amplitude of forced vibration, and many researches were done in this case. In this report, we discuss effect of resonance caused by beam-beam interaction in case of amplitude of forced vibration being big. (author)

  1. Deposition patterns with Turbuhaler.

    Science.gov (United States)

    Borgström, L

    1994-01-01

    The degree of lung deposition is an important factor in the evaluation of different inhalation flow driven dry powder inhalers. A number of studies using radioactive and non-radioactive methods have been performed with Turbuhaler to assess lung deposition under different conditions. Mean total lung deposition of terbutaline sulfate or budesonide via Turbuhaler in healthy volunteers ranged from 21-32% of the dose when a normal inhalation flow (60L/min) was used. At a low flow (30L/min) a mean 15% of the dose was deposited in the lungs, a similar value as for a well-performed inhalation via a pressurized metered dose inhaler. Regional deposition of inhaled drug can be expressed as the ratio between the amount of drug deposited in the more peripheral parts of the lung relative to the more central parts. In a comparative study, budesonide and terbutaline sulfate were given by inhalation via Turbuhaler to healthy volunteers. The ratio of peripheral to central deposition was 2.03 for terbutaline and 1.72 for budesonide. Thus, both the water-soluble terbutaline sulfate and the non-water soluble budesonide seemed to behave in the same way when inhaled via Turbuhaler. In conclusion, Turbuhaler delivers over 20% of a metered dose to the lungs when inhaled at a normal inhalation flow rate. The regional deposition pattern in the lungs was the same for terbutaline sulfate and budesonide, in spite of differences in water solubility. PMID:10147081

  2. MAPLE deposition of nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Caricato, A.P., E-mail: annapaola.caricato@le.infn.it [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, Via Arnesano, I-73100 Lecce (Italy); Arima, V.; Catalano, M. [National Nanotechnology Laboratory (NNL), CNR Istituto Nanoscienze, c/o Distretto Tecnologico, Via Arnesano n. 16, I-73100 Lecce (Italy); Cesaria, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, Via Arnesano, I-73100 Lecce (Italy); Cozzoli, P.D. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, Via Arnesano, I-73100 Lecce (Italy); National Nanotechnology Laboratory (NNL), CNR Istituto Nanoscienze, c/o Distretto Tecnologico, Via Arnesano n. 16, I-73100 Lecce (Italy); Martino, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, Via Arnesano, I-73100 Lecce (Italy); Taurino, A.; Rella, R. [Institute for Microelectronics and Microsystems, IMM-CNR, Via Monteroni, I-73100 Lecce (Italy); Scarfiello, R. [National Nanotechnology Laboratory (NNL), CNR Istituto Nanoscienze, c/o Distretto Tecnologico, Via Arnesano n. 16, I-73100 Lecce (Italy); Tunno, T. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, Via Arnesano, I-73100 Lecce (Italy); Zacheo, A. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, Via Arnesano, I-73100 Lecce (Italy); National Nanotechnology Laboratory (NNL), CNR Istituto Nanoscienze, c/o Distretto Tecnologico, Via Arnesano n. 16, I-73100 Lecce (Italy)

    2014-05-01

    The matrix-assisted pulsed laser evaporation (MAPLE) has been recently exploited for depositing films of nanomaterials by combining the advantages of colloidal inorganic nanoparticles and laser-based techniques. MAPLE-deposition of nanomaterials meeting applicative purposes demands their peculiar properties to be taken into account while planning depositions to guarantee a congruent transfer (in terms of crystal structure and geometric features) and explain the deposition outcome. In particular, since nanofluids can enhance thermal conductivity with respect to conventional fluids, laser-induced heating can induce different ablation thermal regimes as compared to the MAPLE-treatment of soft materials. Moreover, nanoparticles exhibit lower melting temperatures and can experience pre-melting phenomena as compared to their bulk counterparts, which could easily induce shape and or crystal phase modification of the material to be deposited even at very low fluences. In this complex scenario, this review paper focuses on examples of MAPLE-depositions of size and shape controlled nanoparticles for different applications highlights advantages and challenges of the MAPLE-technique. The influence of the deposition parameters on the physical mechanisms which govern the deposition process is discussed.

  3. Validation of Geant4 simulation of electron energy deposition

    CERN Document Server

    Batic, Matej; Pia, Maria Grazia; Saracco, Paolo; Weidenspointner, Georg

    2013-01-01

    Geant4-based simulations of the energy deposited by electrons in various materials are quantitatively compared to high precision calorimetric measurements taken at Sandia Laboratories. The experimental data concern electron beams of energy between a few tens of keV and 1 MeV at various incidence angles. Two experimental scenarios are evaluated: the longitudinal energy deposition pattern in a finely segmented detector, and the total energy deposited in a larger size calorimeter. The simulations are produced with Geant4 versions from 9.1 to 9.6; they involve models of electron-photon interactions in the standard and low energy electromagnetic packages, and various implementations of electron multiple scattering. Significant differences in compatibility with experimental data are observed in the longitudinal energy deposition patterns produced by the examined Geant4 versions, while the total deposited energy exhibits smaller variations across the various Geant4 versions, with the exception Geant4 9.4. The valida...

  4. PIXE analysis of nephrite minerals from different deposits

    Science.gov (United States)

    Zhang, Z. W.; Gan, F. X.; Cheng, H. S.

    2011-02-01

    External-beam PIXE was used to determine the major, minor and trace elements of 45 nephrite minerals from 14 different deposits, including China and other countries. Depending on the R∗ value (mole percent of Mg 2+/(Mg 2+ + Fe 2+(3+))) and content of Cr, Co and Ni, two types of nephrite minerals from dolomite and serpentinized ultramafic deposits can be more accurately distinguished. Besides, the nephrite minerals from Xiaomeiling and Wenchuan deposit can be distinguished with others from dolomite deposits, through the content of Sr and Mn/Fe value, respectively. Moreover, depending on the Sr content, clear evidence was given to prove that the raw materials of ancient nephrite artifacts from Liangzhu culture ruins are not from Xiaomeiling nephrite deposit. Furthermore, PIXE as a non-destructive method will be more used to study ancient nephrite artifacts, so these results can provide scientific basis for seeking the provenance of nephrite raw materials.

  5. PIXE analysis of nephrite minerals from different deposits

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.W., E-mail: zwzhang@siom.ac.c [Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Gan, F.X. [Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); School of Information Science and Engineering, Fudan University, Shanghai 20043 (China); Cheng, H.S. [Institute of Modern Physics, Fudan University, Shanghai 200433 (China)

    2011-02-15

    External-beam PIXE was used to determine the major, minor and trace elements of 45 nephrite minerals from 14 different deposits, including China and other countries. Depending on the R* value (mole percent of Mg{sup 2+}/(Mg{sup 2+} + Fe{sup 2+(3+)})) and content of Cr, Co and Ni, two types of nephrite minerals from dolomite and serpentinized ultramafic deposits can be more accurately distinguished. Besides, the nephrite minerals from Xiaomeiling and Wenchuan deposit can be distinguished with others from dolomite deposits, through the content of Sr and Mn/Fe value, respectively. Moreover, depending on the Sr content, clear evidence was given to prove that the raw materials of ancient nephrite artifacts from Liangzhu culture ruins are not from Xiaomeiling nephrite deposit. Furthermore, PIXE as a non-destructive method will be more used to study ancient nephrite artifacts, so these results can provide scientific basis for seeking the provenance of nephrite raw materials.

  6. A simple model of electron beam initiated dielectric breakdown

    Science.gov (United States)

    Beers, B. L.; Daniell, R. E.; Delmer, T. N.

    1985-01-01

    A steady state model that describes the internal charge distribution of a planar dielectric sample exposed to a uniform electron beam was developed. The model includes the effects of charge deposition and ionization of the beam, separate trap-modulated mobilities for electrons and holes, electron-hole recombination, and pair production by drifting thermal electrons. If the incident beam current is greater than a certain critical value (which depends on sample thickness as well as other sample properties), the steady state solution is non-physical.

  7. Modeling the work piece charging during e-beam lithography

    Science.gov (United States)

    Alles, Benjamin; Cotte, Eric; Simeon, Bernd; Wandel, Timo

    2008-03-01

    Nowadays, high end photomasks are usually patterned with electron beam writers since they provide a superior resolution. However, placement accuracy is severely limited by the so-called charging effect: Each shot with the electron beam deposits charges inside the mask blank which deflect the electrons in the subsequent shots and therefore cause placement errors. In this paper, a model is proposed which allows to establish a prediction of the deflection of the beam and thus provide a method for improving pattern placement for photomasks.

  8. Calculations of tangential neutral beam injection current drive efficiency for present moderate flux FRCs

    Science.gov (United States)

    Lifschitz, A. F.; Farengo, R.; Hoffman, A. L.

    2004-09-01

    A Monte Carlo code is employed to study tangential neutral beam injection into moderate flux field reversed configurations (FRCs) sustained by rotating magnetic fields (RMFs). The dimensions of the FRC are similar to those obtained in the Translation, Confinement and Sustainment (TCS) experiment. Two injection geometries are considered. In one case the beam is injected through the ends, at a small angle to the FRC axis while in the other the beam is injected almost perpendicularly, at some point along the separatrix. The current drive efficiency and the deposited power are calculated employing plasma parameters that can be expected in future experiments on TCS. It is shown that, although the RMF degrades beam confinement, relatively high efficiencies can be obtained provided the RMF does not penetrate too deeply into the plasma. Since the torque deposited by the neutral beam can balance the torque deposited by the RMF, the simultaneous use of both methods appears to be a very attractive option.

  9. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  10. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  11. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  12. KEKB beam instrumentation systems

    Science.gov (United States)

    Arinaga, M.; Flanagan, J.; Hiramatsu, S.; Ieiri, T.; Ikeda, H.; Ishii, H.; Kikutani, E.; Mimashi, T.; Mitsuhashi, T.; Mizuno, H.; Mori, K.; Tejima, M.; Tobiyama, M.

    2003-02-01

    For the stable high-luminosity operation and luminosity increase, the electron and positron storage rings of the KEK B-Factory (KEKB) is equipped with various beam instrumentations, which have been working well since the start of the commissioning in December, 1998. Details and performance of the beam-position monitor system based on the spectrum analysis using DSPs, the turn-by-turn BPM with four-dimensional function available for measurements of the individual bunch position, phase and intensity, the parametric beam-DCCTs designed so as to avoid the magnetic-core-selection problems for the parametric flux modulation, the bunch-by-bunch feedback system indispensable to suppress the strong multibunch instabilities in KEKB, the various optical beam diagnostic systems, such as synchrotron radiation interferometers for precise beam-size measurement, the tune meters, the bunch length monitors and the beam-loss monitors are described. Delicate machine tuning of KEKB is strongly supported by these instrumentations.

  13. Laser Beam Focus Analyser

    DEFF Research Database (Denmark)

    Nielsen, Peter Carøe; Hansen, Hans Nørgaard; Olsen, Flemming Ove;

    2007-01-01

    The quantitative and qualitative description of laser beam characteristics is important for process implementation and optimisation. In particular, a need for quantitative characterisation of beam diameter was identified when using fibre lasers for micro manufacturing. Here the beam diameter limits...... the obtainable features in direct laser machining as well as heat affected zones in welding processes. This paper describes the development of a measuring unit capable of analysing beam shape and diameter of lasers to be used in manufacturing processes. The analyser is based on the principle of a rotating...... mechanical wire being swept through the laser beam at varying Z-heights. The reflected signal is analysed and the resulting beam profile determined. The development comprised the design of a flexible fixture capable of providing both rotation and Z-axis movement, control software including data capture...

  14. Uncoupled thermoelasticity solutions applied on beam dumps

    Science.gov (United States)

    Ouzia, A.; Antonakakis, T.

    2016-06-01

    In particle accelerators the process of beam absorption is vital. At CERN particle beams are accelerated at energies of the order of TeV. In the event of a system failure or following collisions, the beam needs to be safely absorbed by dedicated protecting blocks. The thermal shock caused by the rapid energy deposition within the absorbing block causes thermal stresses that may rise above critical levels. The present paper provides a convenient expression of such stresses under hypotheses described hereafter. The temperature field caused by the beam energy deposition is assumed to be Gaussian. Such a field models a non-diffusive heat deposition. These effects are described as thermoelastic as long as the stresses remain below the proportional limit and can be analytically modeled by the coupled equations of thermoelasticity. The analytical solution to the uncoupled thermoelastic problem in an infinite domain is presented herein and matched with a finite unit radius sphere. The assumption of zero diffusion as well as the validity of the match with a finite geometry is quantified such that the obtained solutions can be rigorously applied to real problems. Furthermore, truncated series solutions, which are not novel, are used for comparison purposes. All quantities are nondimensional and the problem reduces to a dependence of five dimensionless parameters. The equations of elasticity are presented in the potential formulation where the shear potential is assumed to be nil due to the source being a gradient and the absence of boundaries. Nevertheless equivalent three-dimensional stresses are computed using the compressive potential and optimized using standard analytical optimization methods. An alternative algorithm for finding the critical points of the three-dimensional stress function is presented. Finally, a case study concerning the proton synchrotron booster dump is presented where the aforementioned analytical solutions are used and the preceding assumptions

  15. Periodic Microstructures Formation on Plastic Plate by Aerosol Beam Irradiation

    Science.gov (United States)

    Tsukamoto, Masahiro; Abe, Nobuyuki; Morimoto, Junji; Akedo, Jun

    Technology of periodic microstructures formation on plastic plate, the polyethylene terephthalate (PET) plate, was developed with an aerosol beam. The beam was composed of submicron-size anatase titania (TiO2) particles. Formation mechanism depended on an incident angle of the beam to the PET plate. At an incident angles in the range of 0 to 30°C, a TiO2 films were fabricated on the PET plate. Deposition rate of the film decreased as incident angle increased in the range of 0 to 30°C. The film was not produced at 40°C. At 50 and 60°C, the PET plate was etched by the beam irradiation. In the etching area, periodic microstructures were self-organized, whose grooves’ direction was perpendicular to the beam incidence direction.

  16. Medical beam monitor—Pre-clinical evaluation and future applications

    CERN Document Server

    Frais-Kölbl, H; Schreiner, T; Georg, D; Pernegger, H

    2007-01-01

    Future medical ion beam applications for cancer therapy which are based on scanning technology will require advanced beam diagnostics equipment. For a precise analysis of beam parameters we want to resolve time structures in the range of microseconds to nanoseconds. A prototype of an advanced beam monitor was developed by the University of Applied Sciences Wiener Neustadt and its research subsidiary Fotec in co-operation with CERN RD42, Ohio State University and the Jožef Stefan Institute in Ljubljana. The detector is based on polycrystalline Chemical Vapor Deposition (pCVD) diamond substrates and is equipped with readout electronics up to 2 GHz analog bandwidth. In this paper we present the design of the pCVD-detector system and results of tests performed in various particle accelerator based facilities. Measurements performed in clinical high energy photon beams agreed within 1.2% with results obtained by standard ionization chambers.

  17. Lithium ion beam driven hohlraums for PBFA II

    Energy Technology Data Exchange (ETDEWEB)

    Dukart, R.J.

    1994-05-06

    In our light ion inertial confinement fusion (ICF) program, fusion capsules are driven with an intense x-ray radiation field produced when an intense beam of ions penetrates a radiation case and deposits energy in a foam x-ray conversion region. A first step in the program is to generate and measure these intense fields on the Particle Beam Fusion Accelerator II (PBFA II). Our goal is to generate a 100-eV radiation temperature in lithium ion beam driven hohlraums, the radiation environment which will provide the initial drive temperature for ion beam driven implosion systems designed to achieve high gain. In this paper, we describe the design of such hohlraum targets and their predicted performance on PBFA II as we provide increasing ion beam intensities.

  18. Proton Beam Energy Characterization

    OpenAIRE

    Marus, Lauren A.; Engle, J.W.; John, K. D.; Birnbaum, E. R.; Nortier, F. M.

    2015-01-01

    Introduction The Los Alamos Isotope Production Facility (IPF) is actively engaged in the development of isotope production technologies that can utilize its 100 MeV proton beam. Characterization of the proton beam energy and current is vital for optimizing isotope production and accurately conducting research at the IPF. Motivation In order to monitor beam intensity during research irradiations, aluminum foils are interspersed in experimental stacks. A theoretical yield of 22Na from...

  19. Hyperon beam physics

    Energy Technology Data Exchange (ETDEWEB)

    Cooper, P.S.

    1996-03-01

    This report reviews the present status and recent results in hyperon physics concentrating on results from high energy hyperon beam experiments performed at Fermilab over the past several years. The report focuses on hyperon production polarization, precision hyperon magnetic moment measurements and radiative decay studies. Modern charged hyperon beam experiments are characterized by {approx}100m long apparatus and hyperon beams with {gamma}{sub Y}{approx}100 and hyperon fluxes in the 1-100 kHz range.

  20. Chilled beam application guidebook

    CERN Document Server

    Butler, David; Gräslund, Jonas; Hogeling, Jaap; Lund Kristiansen, Erik; Reinikanen, Mika; Svensson, Gunnar

    2007-01-01

    Chilled beam systems are primarily used for cooling and ventilation in spaces, which appreciate good indoor environmental quality and individual space control. Active chilled beams are connected to the ventilation ductwork, high temperature cold water, and when desired, low temperature hot water system. Primary air supply induces room air to be recirculated through the heat exchanger of the chilled beam. In order to cool or heat the room either cold or warm water is cycled through the heat exchanger.